Silicon ribbon technology assessment 1978-1986 - A computer-assisted analysis using PECAN

Science.gov (United States)

Kran, A.

1978-01-01

The paper presents a 1978-1986 economic outlook for silicon ribbon technology based on the capillary action shaping technique. The outlook is presented within the framework of two sets of scenarios, which develop strategy for approaching the 1986 national energy capacity cost objective of $0.50/WE peak. The PECAN (Photovoltaic Energy Conversion Analysis) simulation technique is used to develop a 1986 sheet material price ($50/sq m) which apparently can be attained without further scientific breakthrough.

Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process, task 2. LSSA project

Science.gov (United States)

Duffy, M. T.; Berkman, S.; Moss, H. S.; Cullen, G. W.

1978-01-01

The results of emission spectroscopic analysis indicate that molten silicon can remain in contact with hot-pressed Si3N4 (99.2 percent theoretical density) for prolonged periods without attaining the impurity content level of the nitride. Although MgO was used as binder, Mg was not found present in the silicon sessile drop in quantities much above the level initially present in the silicon source material. Preliminary experiments with EFG-type dies coated with CVD Si3N4 or CVD SiOxNy indicate that capillary rise does not occur readily in these dies. The same was found to be true of hot-pressed and reaction-sintered Si3N4 obtained commercially. However, when dies were formed by depositing CVD layers on shaped silicon slabs, a column of molten silicon was maintained in each CVD die while being heated in contact with a crucible of molten silicon. Preliminary wetting of dies appears necessary for EFG growth. Several ribbon growth experiments were performed from V-shaped dies.

Development and Evaluation of Die Materials for Use in the Growth of Silicon Ribbons by the Inverted Ribbon Growth Process. Task 2: LSSA Project

Science.gov (United States)

Duffy, M. T.; Berkman, S.; Moss, H. I.; Cullen, G. W.

1978-01-01

Several ribbon growth experiments were performed from V-shaped dies coated with CVD Si3N4. The most significant result was the ability to perform five consecutive growth runs from the same die without mechanical degradation of the die through temperature cycling. The die was made from vitreous carbon coated with CVD Si3N4. Silicon oxynitride, Si2N2O, was examined with respect to thermal stability in contact with molten silicon. The results of X-ray analysis indicate that this material is converted to both alpha - and beta-Si3N4 in the presence of molten silicon. Experiments on the stability of CVD SiOxNy shoe that this material can be maintained in contact with molten silicon (sessile drop test) for greater than 30 h at 1450 C without total decompositon. These layers are converted mainly to beta-Si3N4.

Advanced dendritic web growth development and development of single-crystal silicon dendritic ribbon and high-efficiency solar cell program

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.

1986-01-01

Efforts to demonstrate that the dendritic web technology is ready for commercial use by the end of 1986 continues. A commercial readiness goal involves improvements to crystal growth furnace throughput to demonstrate an area growth rate of greater than 15 sq cm/min while simultaneously growing 10 meters or more of ribbon under conditions of continuous melt replenishment. Continuous means that the silicon melt is being replenished at the same rate that it is being consumed by ribbon growth so that the melt level remains constant. Efforts continue on computer thermal modeling required to define high speed, low stress, continuous growth configurations; the study of convective effects in the molten silicon and growth furnace cover gas; on furnace component modifications; on web quality assessments; and on experimental growth activities.

Incorporation, diffusion and segregation of impurities in polycrystalline silicon

Energy Technology Data Exchange (ETDEWEB)

Deville, J.P.; Soltani, M.L. (Universite Louis Pasteur, 67 - Strasbourg (France)); Quesada, J. (Laboratoire de Metallurgie-Chimie des Materiaux, E.N.S.A.I.S., 67 - Strasbourg (France))

1982-01-01

We studied by means of X-Ray photoelectron Spectroscopy the nature, distribution and, when possible, the chemical bond of impurities at the surface of polycrystalline silicon samples grown on a carbon ribbon. Besides main impurities (carbon and oxygen), always present at concentrations around their limit of solubility in silicon, metal impurities have been found: their nature varies from one sample to another. Their spatial distribution is not random: some are strictly confined at the surface (sodium), whereas others are in the superficial oxidized layer (calcium, magnesium) or localized at the oxide-bulk silicon interface (iron). Metal impurities are coming from the carbon ribbon and are incorporated to silicon during the growth process. It is not yet possible to give a model of diffusion processes of impurities since they are too numerous and interact one with the other. However oxygen seems to play a leading role in the spatial distribution of metal impurities.

FY 1979 Annual report on Sunshine Project results. Research and development of photovoltaic power generation systems (Research and development of vertically drawn ribbon crystals of silicon); 1979 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Silicon tatehiki ribon kessho no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1980-03-01

The efforts in this fiscal year for development of methods for vertically drawing ribbon crystals of silicon are directed to the following items, in order to further improve the techniques for vertically drawing two or more ribbon crystals on a continuous basis, developed in the previous fiscal year: (1) tests of the drawing apparatus, developed in the previous fiscal year, to deepen the techniques for drawing the ribbon crystals, (2) modification of the above apparatus to further develop the apparatus for vertically drawing two or more ribbon crystals on a continuous basis, (3) comparison of drawing a single ribbon crystal, conducted separately, with drawing two or more ribbon crystals, to clarify the problems involved in the latter, and (4) basic investigations on the materials for the furnace internals exposed to high temperature, other than the carbon material used at present. The vertically drawn ribbon crystals of silicon is investigated, based on the results obtained in the previous fiscal year that ribbon crystal quality depends on impurities present therein, mainly for (1) quantitative analysis of the impurity elements present in the ribbon crystal, (2) relationship between impurity elements and characteristics of the solar cells made on a trial basis, and (3) investigations on local concentration of the impurity elements. (NEDO)

FY 1977 Annual report on Sunshine Project results. Research and development of photovoltaic power generation systems (Research and development of vertically drawn ribbon crystals of silicon); 1977 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Silicon tatehiki ribon kessho no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1978-03-31

This project is aimed at establishment of ribbon crystal production techniques and development of photovoltaic power generation systems incorporating the ribbon crystals, in order to greatly reduce cost of photovoltaic power generation systems. The research efforts in this fiscal year is focused on development of the techniques for continuously growing the ribbons, to attain the above goal by accelerating growth of the ribbon crystals in unit time and clarifying, in the early stage, the problems to be solved before commercializing the ribbon crystals for the future solar cells. The major research results are (1) development of the method for vertically drawing ribbon crystals of silicon, and (2) analysis of the vertically drawn ribbon crystals of silicon. For the item (1), the technological development efforts are focused on continuously drawing mechanisms and furnace for continuous drawing, with the structural studies as the center for the former and solution of heat-related problems for the latter, which eventually lead to development of a 800 mm long ribbon crystal passing over the roll. For the item (2), the crystal structure is analyzed by the electron channeling pattern method. The results suggest that use of a p-type substrate can improve average efficiency of the ribbon crystal type solar cell. (NEDO)

High temperature (900-1300 C) mechanical behaviour of dendritic web grown silicon ribbons - Strain rate and temperature dependence of the yield stress

Science.gov (United States)

Mathews, V. K.; Gross, T. S.

1987-01-01

The mechanical behavior of dendritic web Si ribbons close the melting point was studied experimentally. The goal of the study was to generate data for modeling the generation of stresses and dislocation structures during growth of dendritic web Si ribbons, thereby permitting modifications to the production process, i.e., the temperature profile, to lower production costs for the photovoltaic ribbons. A laser was used to cut specimens in the direction of growth of sample ribbons, which were then subjected to tensile tests at temperatures up to 1300 C in an Ar atmosphere. The tensile strengths of the samples increased when the temperature rose above 1200 C, a phenomena which was attributed to the diffusion of oxygen atoms to the quasi-dislocation sites. The migration to the potential dislocations sites effectively locked the dislocations.

Silicon web process development

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

1981-01-01

The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

Silicon web process development. [for low cost solar cells

Science.gov (United States)

Duncan, C. S.; Hopkins, R. H.; Seidensticker, R. G.; Mchugh, J. P.; Hill, F. E.; Heimlich, M. E.; Driggers, J. M.

1979-01-01

Silicon dendritic web, a single crystal ribbon shaped during growth by crystallographic forces and surface tension (rather than dies), is a highly promising base material for efficient low cost solar cells. The form of the product smooth, flexible strips 100 to 200 microns thick, conserves expensive silicon and facilitates automation of crystal growth and the subsequent manufacturing of solar cells. These characteristics, coupled with the highest demonstrated ribbon solar cell efficiency-15.5%-make silicon web a leading candidate to achieve, or better, the 1986 Low Cost Solar Array (LSA) Project cost objective of 50 cents per peak watt of photovoltaic output power. The main objective of the Web Program, technology development to significantly increase web output rate, and to show the feasibility for simultaneous melt replenishment and growth, have largely been accomplished. Recently, web output rates of 23.6 sq cm/min, nearly three times the 8 sq cm/min maximum rate of a year ago, were achieved. Webs 4 cm wide or greater were grown on a number of occassions.

High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

Energy Technology Data Exchange (ETDEWEB)

Shekari, L., E-mail: lsg09_phy089@student.usm.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Ramizy, A.; Omar, K.; Hassan, H. Abu; Hassan, Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2012-12-15

Highlights: Black-Right-Pointing-Pointer A new kind of substrate (porous silicon) was used. Black-Right-Pointing-Pointer Also this research introduces an easy and safe method to grow high quality GaN NWs. Black-Right-Pointing-Pointer This is a new growth process to decrease the cost, complexity of growth of GaN NWs. Black-Right-Pointing-Pointer It is a controllable method to synthesize GaN NWs by thermal evaporation. - Abstract: Nanowires (NWs) of GaN thin films were prepared on as-grown Si (1 1 1) and porous silicon (PS) substrates using thermal evaporation method. The film growth produced high-quality wurtzite GaN NWs. The size, morphology, and nanostructures of the crystals were investigated through scanning electron microscopy, high-resolution X-ray diffraction and photoluminescence spectroscopy. The NWs grown on porous silicon were thinner, longer and denser compared with those on as-grown Si. The energy band gap of the NWs grown on PS was larger than that of NWs on as-grown Si. This is due to the greater quantum confinement effects of the crystalline structure of the NWs grown on PS.

Manufacture of ribbon and solar cells of material of semiconductor grade

International Nuclear Information System (INIS)

1980-01-01

A method is described of producing ribbon-like substantially monocrystalline bodies of silicon or other materials of semiconductor grade suitable for use in solar cells or other semiconductor devices. A tube of the material is made and a photovoltaic junction formed in it. The tube is then divided lengthwise into a number of ribbon-like bodies. The photovoltaic junction can be formed either by diffusion or by ion-implantation. (U.K.)

Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon.

Science.gov (United States)

Li, Kun; Sun, Hao; Ren, Fan; Ng, Kar Wei; Tran, Thai-Truong D; Chen, Roger; Chang-Hasnain, Connie J

2014-01-08

Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 μm. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.

Silicon transport in sputter-deposited tantalum layers grown under ion bombardment

International Nuclear Information System (INIS)

Gallais, P.; Hantzpergue, J.J.; Remy, J.C.; Roptin, D.

1988-01-01

Tantalum was sputter deposited on (111) Si substrate under low-energy ion bombardment in order to study the effects of the ion energy on the silicon transport into the Ta layer. The Si substrate was heated up to 500 0 C during growth. For ion energies up to 180 eV silicon is not transported into tantalum and the growth temperature has no effect. An ion bombardment energy of 280 eV enhances the transport of silicon throughout the tantalum layer. Growth temperatures up to 300 0 C have no effect on the silicon transport which is mainly enhanced by the ion bombardment. For growth temperatures between 300 and 500 0 C, the silicon transport is also enhanced by the thermal diffusion. The experimental depth distribution of silicon is similar to the theoretical depth distribution calculated for the case of an interdiffusion. The ion-enhanced process of silicon transport is characterized by an activation energy of 0.4 eV. Silicon into the layers as-grown at 500 0 C is in both states, amorphous silicide and microcrystalline cubic silicon

X-ray and scanning electron microscopic investigation of porous silicon and silicon epitaxial layers grown on porous silicon

International Nuclear Information System (INIS)

Wierzchowski, W.; Pawlowska, M.; Nossarzewska-Orlowska, E.; Brzozowski, A.; Wieteska, K.; Graeff, W.

1998-01-01

The 1 to 5 μm thick layers of porous silicon and epitaxial layers grown on porous silicon were studied by means of X-ray diffraction methods, realised with a wide use of synchrotron source and scanning microscopy. The results of x-ray investigation pointed the difference of lateral periodicity between the porous layer and the substrate. It was also found that the deposition of epitaxial layer considerably reduced the coherence of porous fragments. A number of interface phenomena was also observed in section and plane wave topographs. The scanning electron microscopic investigation of cleavage faces enabled direct evaluation of porous layer thickness and revealed some details of their morphology. The scanning observation of etched surfaces of epitaxial layers deposited on porous silicon revealed dislocations and other defects not reasonable in the X-ray topographs. (author)

Development of low-cost silicon crystal growth techniques for terrestrial photovoltaic solar energy conversion

Science.gov (United States)

Zoutendyk, J. A.

1976-01-01

Because of the growing need for new sources of electrical energy, photovoltaic solar energy conversion is being developed. Photovoltaic devices are now being produced mainly from silicon wafers obtained from the slicing and polishing of cylindrically shaped single crystal ingots. Inherently high-cost processes now being used must either be eliminated or modified to provide low-cost crystalline silicon. Basic to this pursuit is the development of new or modified methods of crystal growth and, if necessary, crystal cutting. If silicon could be grown in a form requiring no cutting, a significant cost saving would potentially be realized. Therefore, several techniques for growth in the form of ribbons or sheets are being explored. In addition, novel techniques for low-cost ingot growth and cutting are under investigation.

Diffusion of hydrogen from plasma source by grain boundaries in EFG silicon

International Nuclear Information System (INIS)

Fedotov, A.; Saad, Anis M.H.; Drozdov, N.; Mazanik, A.; Ulyashin, A.; Fahrner, W.R.; Stognii, A.

2001-01-01

Diffusion of atomized hydrogen along grain boundaries (GBs) studied by transformation of their electrical activity in p-type silicon bi crystalline samples cut from EFG silicon crystals was investigated. The changes in electrical activity of GBs was estimated relative to both minority (MiC) and majority (MaC) carriers and demonstrated the correlation between the type, structure and thermal pre-history of GBs. It was shown on the base of this study that diffusion along GBs depends essentially on three factors: type of GBs, state of ribbons (as-grown or annealed) and concurrence of grain boundary dangling bonds and boron passivation effects. The model of the longitudinal hydrogen diffusion that explains these results is proposed

Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

International Nuclear Information System (INIS)

Chao, D.S.; Liang, J.H.

2013-01-01

Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

Development of processes for the production of low cost silicon dendritic web for solar cells

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Skutch, M. E.; Driggers, J. M.; Hill, F. E.

1980-01-01

High area output rates and continuous, automated growth are two key technical requirements for the growth of low-cost silicon ribbons for solar cells. By means of computer-aided furnace design, silicon dendritic web output rates as high as 27 sq cm/min have been achieved, a value in excess of that projected to meet a $0.50 per peak watt solar array manufacturing cost. The feasibility of simultaneous web growth while the melt is replenished with pelletized silicon has also been demonstrated. This step is an important precursor to the development of an automated growth system. Solar cells made on the replenished material were just as efficient as devices fabricated on typical webs grown without replenishment. Moreover, web cells made on a less-refined, pelletized polycrystalline silicon synthesized by the Battelle process yielded efficiencies up to 13% (AM1).

Role of oxygen in surface segregation of metal impurities in silicon poly- and bicrystals

Energy Technology Data Exchange (ETDEWEB)

Amarray, E.; Deville, J.P.

1987-07-01

Metal impurities at surfaces of polycrystalline silicon ribbons have been characterized by surface sensitive methods. Oxygen and heat treatments were found to be a driving force for surface segregation of these impurities. To better analyse their influence and their possible incidence in gettering, model studies were undertaken on Czochralski grown silicon bicrystals. Two main factors of surface segregation have been studied: the role of an ultra-thin oxide layer and the effect of heat treatments. The best surface purification was obtained after an annealing process at 750/sup 0/C of a previously oxidized surface at 450/sup 0/C. This was related to the formation of SiO clusters, followed by a coalescence of SiO/sub 4/ units leading to the subsequent injection of silicon self-interstitials in the lattice.

Ribbon curling

Science.gov (United States)

Juel, Anne; Prior, Chris; Moussou, Julien; Chakrabarti, Buddhapriya; Jensen, Oliver

The procedure of curling a ribbon by running it over a sharp blade is commonly used when wrapping presents. Despite its ubiquity, a quantitative explanation of this everyday phenomenon is still lacking. We address this using experiment and theory, examining the dependence of ribbon curvature on blade curvature, the longitudinal load imposed on the ribbon and the speed of pulling. Experiments in which a ribbon is drawn steadily over a blade under a fixed load show that the ribbon curvature is generated over a restricted range of loads, the curvature/load relationship can be non-monotonic, and faster pulling (under a constant imposed load) results in less tightly curled ribbons. We develop a theoretical model that captures these features, building on the concept that the ribbon under the imposed deformation undergoes differential plastic stretching across its thickness, resulting in a permanently curved shape. The model identifies factors that optimize curling and clarifies the physical mechanisms underlying the ribbon's nonlinear response to an apparently simple deformation.

GMI effect in CuO coated Co-based amorphous ribbons

Energy Technology Data Exchange (ETDEWEB)

Taysioglu, Asli Ayten [Department of Physics, Sciences and Arts Faculty, Uludag University, 16059 Gorukle, Bursa (Turkey); Peksoz, Ahmet, E-mail: peksoz@uludag.edu.t [Department of Physics, Sciences and Arts Faculty, Uludag University, 16059 Gorukle, Bursa (Turkey); Kaya, Yunus [Department of Chemistry, Sciences and Arts Faculty, Uludag University, 16059 Gorukle, Bursa (Turkey); Derebasi, Naim [Department of Physics, Sciences and Arts Faculty, Uludag University, 16059 Gorukle, Bursa (Turkey); Irez, Gazi [Department of Chemistry, Sciences and Arts Faculty, Uludag University, 16059 Gorukle, Bursa (Turkey); Kaynak, Gokay [Department of Physics, Sciences and Arts Faculty, Uludag University, 16059 Gorukle, Bursa (Turkey)

2009-11-13

A Copper oxide (CuO) film has been grown on a surface of Co-based amorphous ribbon using chemical successive ionic layer adsorption and reaction technique, at room temperature and atmosphere pressure. The influence of coating and width of ribbon on giant magneto impedance have been investigated over a frequency range from 0.1 to 3 MHz and under a static magnetic field between -8 and +8 kA/m. The results showed that Co-based amorphous ribbons, which are coated CuO film, have a significant effect on the magnitude and operation frequency for the giant magneto impedance effect as compared to the samples without coating. The highest giant magneto impedance effect was found to be 14.90 on 5 mm width coated ribbon, which is 60% higher than the sample without coating. A surface observation of these samples has been carried out by an atomic force microscope. The AFM images reveal the difference between surfaces of coated and as-cast sample.

GMI effect in CuO coated Co-based amorphous ribbons

International Nuclear Information System (INIS)

Taysioglu, Asli Ayten; Peksoz, Ahmet; Kaya, Yunus; Derebasi, Naim; Irez, Gazi; Kaynak, Gokay

2009-01-01

A Copper oxide (CuO) film has been grown on a surface of Co-based amorphous ribbon using chemical successive ionic layer adsorption and reaction technique, at room temperature and atmosphere pressure. The influence of coating and width of ribbon on giant magneto impedance have been investigated over a frequency range from 0.1 to 3 MHz and under a static magnetic field between -8 and +8 kA/m. The results showed that Co-based amorphous ribbons, which are coated CuO film, have a significant effect on the magnitude and operation frequency for the giant magneto impedance effect as compared to the samples without coating. The highest giant magneto impedance effect was found to be 14.90 on 5 mm width coated ribbon, which is 60% higher than the sample without coating. A surface observation of these samples has been carried out by an atomic force microscope. The AFM images reveal the difference between surfaces of coated and as-cast sample.

Gettering effects in RAD polysilicon ribbons: An XPS/AES study

Energy Technology Data Exchange (ETDEWEB)

Amarray, E.; Deville, J.P.; Quesada, J.

1987-03-01

Evidence for gettering effects during the various heat treatments applied to RAD ribbons were investigated with surface analysis methods. These heat treatments occur either during the burning-off process of the carbon support or during the POCl/sub 3/ diffusion, and transport metallic impurities near the surface of the sample. Oxidation of clean silicon surfaces, cleaved either in air or ultra-high vacuum, has shown that the same metallic impurities are brought near the surface by this treatment alone. It is thus suggested that controlled oxidations and heat treatments can be used to improve the electrical properties of polysilicon, and especially of ribbons.

Fabrication of Fe-6.5wt%Si Ribbons by Melt Spinning Method on Large Scale

Directory of Open Access Journals (Sweden)

Y. F. Liang

2015-01-01

Full Text Available Melt spinning method has been widely applied for fabrication of Fe-based amorphous/nanocrystalline ribbons in industry. Compared with Fe-based amorphous/nanocrystalline alloys, Fe-6.5wt%Si high silicon steel is of low cost and has comparable excellent soft magnetic properties. Due to higher melting point and absence of supercooled liquid region, fabrication of Fe-6.5wt%Si ribbons is very hard and is only on lab scale. In this paper, we report that large scale fabrication of Fe-6.5wt%Si ribbons was successful and microstructures, ordered structures, and mechanical and soft magnetic properties of the ribbons were investigated. Due to rapid solidification rate, the ribbons were of ultrafine grains, and low degree of order and exhibited some extent of bending and tensile ductility. After heat treatment, excellent soft magnetic properties were obtained. Due to near-zero magnetostriction, the ribbons are promising to be used in electric devices with high frequencies where low noises are required.

Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

International Nuclear Information System (INIS)

Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

2006-01-01

Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

Nanophotonic integrated circuits from nanoresonators grown on silicon.

Science.gov (United States)

Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D; Li, Kun; Chang-Hasnain, Connie

2014-07-07

Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

Chemical and structural properties of polymorphous silicon thin films grown from dichlorosilane

Energy Technology Data Exchange (ETDEWEB)

Álvarez-Macías, C.; Monroy, B.M.; Huerta, L.; Canseco-Martínez, M.A. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, C.P. 04510 México, D.F. (Mexico); Picquart, M. [Departamento de Física, Universidad Autónoma Metropolitana, Iztapalapa, A.P. 55-534, 09340 México, D.F. (Mexico); Santoyo-Salazar, J. [Departamento de Física, CINVESTAV-IPN, A.P. 14-740, C.P. 07000 México, D.F. (Mexico); Sánchez, M.F. García [Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional, Av. I.P.N. 2580, Gustavo A. Madero, 07340 México .D.F. (Mexico); Santana, G., E-mail: gsantana@iim.unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, C.P. 04510 México, D.F. (Mexico)

2013-11-15

We have examined the effects of hydrogen dilution (R{sub H}) and deposition pressure on the morphological, structural and chemical properties of polymorphous silicon thin films (pm-Si:H), using dichlorosilane as silicon precursor in the plasma enhanced chemical vapor deposition (PECVD) process. The use of silicon chlorinated precursors enhances the crystallization process in as grown pm-Si:H samples, obtaining crystalline fractions from Raman spectra in the range of 65–95%. Atomic Force Microscopy results show the morphological differences obtained when the chlorine chemistry dominates the growth process and when the plasma–surface interactions become more prominent. Augmenting R{sub H} causes a considerable reduction in both roughness and topography, demonstrating an enhancement of ion bombardment and attack of the growing surface. X-ray Photoelectron Spectroscopy results show that, after ambient exposure, there is low concentration of oxygen inside the films grown at low R{sub H}, present in the form of Si-O, which can be considered as structural defects. Instead, oxidation increases with deposition pressure and dilution, along with film porosity, generating a secondary SiO{sub x} phase. For higher pressure and dilution, the amount of chlorine incorporated to the film decreases congruently with HCl chlorine extraction processes involving atomic hydrogen interactions with the surface. In all cases, weak silicon hydride (Si-H) bonds were not detected by infrared spectroscopy, while bonding configurations associated to the silicon nanocrystal surface were clearly observed. Since these films are generally used in photovoltaic devices, analyzing their chemical and structural properties such as oxygen incorporation to the films, along with chlorine and hydrogen, is fundamental in order to understand and optimize their electrical and optical properties.

Structural and optical properties of ZnO films grown on silicon and ...

Indian Academy of Sciences (India)

TECS

Abstract. Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon .... voluted O1 s and (c) typical Zr 3d spectra of ZrO2/ZnO/Si film. .... strate doping concentration (NB) of ≈ 2⋅5 × 1015 cm–3 is.

Optical characteristics of silicon nanowires grown from tin catalyst layers on silicon coated glass

KAUST Repository

Ball, Jeremy

2012-08-20

The optical characteristics of silicon nanowires grown on Si layers on glass have been modeled using the FDTD (Finite Difference Time Domain) technique and compared with experimental results. The wires were grown by the VLS (vapour-liquid-solid) method using Sn catalyst layers and exhibit a conical shape. The resulting measured and modeled absorption, reflectance and transmittance spectra have been investigated as a function of the thickness of the underlying Si layer and the initial catalyst layer, the latter having a strong influence on wire density. High levels of absorption (>90% in the visible wavelength range) and good agreement between the modeling and experiment have been observed when the nanowires have a relatively high density of ∼4 wires/μ m2. The experimental and modeled results diverge for samples with a lower density of wire growth. The results are discussed along with some implications for solar cell fabrication. © 2012 Optical Society of America.

Optical characteristics of silicon nanowires grown from tin catalyst layers on silicon coated glass

KAUST Repository

Ball, Jeremy; Centeno, Anthony; Mendis, Budhika G.; Reehal, H. S.; Alford, Neil

2012-01-01

The optical characteristics of silicon nanowires grown on Si layers on glass have been modeled using the FDTD (Finite Difference Time Domain) technique and compared with experimental results. The wires were grown by the VLS (vapour-liquid-solid) method using Sn catalyst layers and exhibit a conical shape. The resulting measured and modeled absorption, reflectance and transmittance spectra have been investigated as a function of the thickness of the underlying Si layer and the initial catalyst layer, the latter having a strong influence on wire density. High levels of absorption (>90% in the visible wavelength range) and good agreement between the modeling and experiment have been observed when the nanowires have a relatively high density of ∼4 wires/μ m2. The experimental and modeled results diverge for samples with a lower density of wire growth. The results are discussed along with some implications for solar cell fabrication. © 2012 Optical Society of America.

Fiscal 1974 Sunshine Project result report. R and D on photovoltaic power generation system (R and D on Si ribbon crystal horizontal pulling method); 1974 nendo taiyoko hatsuden system seika hokokusho. Silicon yokohiki ribbon kessho no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1975-05-01

The ribbon crystal horizontal pulling process first supplies Si melt from a continuous Si material supply equipment to a pulling bath which is formed by a quartz crucible and heater. Supplied melt is heated by the pulling bath heater to keep its molten condition. The pulling bath is piled up to the top rim of the quartz crucible by supplied melt, forming the liquid surface of the pulling bath. A plane crystal seed is contacted with melt nearly horizontally. A crystal growth layer is formed at the solid-liquid interface of the contact part of the seed by controlling a heat control equipment and bath heating power. Non-dendrite growth is better in crystal quality than the others. Among non-dendrite growth methods, a horizontal pulling method is more excellent in fast pulling of wider ribbon crystals than a vertical one. Among horizontal pulling methods, Toyo Silicon Co.' method discharges heat into gas phase by using free surface including the vicinity of the seed as cooling surface, while Bleil method uses a solid heat sink for heat release, resulting in slower crystal growth. (NEDO)

Large Area Silicon Sheet by EFG. [quality control and productivity of edge-defined film-fed growth of ribbons

Science.gov (United States)

1979-01-01

Influences on ribbon quality which might be caused by various materials of construction which are used in the growth furnace were assessed. At the present level of ribbon quality, which has produced 8.5% to 9.5% efficient solar cells, no particular influence of any furnace part was detected. The experiments led to the suspicion that the general environment and the somewhat unoptimized materials handling procedures might be responsible for the current variations in ribbon quality and that, therefore, continuous work with this furnace under rather more stringent environmental conditions and operating procedures could perhaps improve materials quality to some extent. The work on the multiple furnace was continued with two multiple growth runs being performed. In these runs, the melt replenishment system performed poorly and extensive modifications to it were designed to make reliable melt feeding for five ribbon growth possible. Additional characterization techniques for wide ribbons, stress measurements, and growth dynamics experiments are reported.

Investigation on nonlinear optical properties of MoS2 nanoflakes grown on silicon and quartz substrates

Science.gov (United States)

Bayesteh, Samaneh; Zahra Mortazavi, Seyedeh; Reyhani, Ali

2018-05-01

In this study, MoS2 nanoflakes were directly grown on different substrates—Si/SiO2 and quartz—by one-step thermal chemical vapor deposition using MoO3 and sulfide powders as precursors. Scanning electron microscopy and x-ray diffraction patterns demonstrated the formation of MoS2 structures on both substrates. Moreover, UV-visible and photoluminescence analysis confirmed the formation of MoS2 few-layer structures. According to Raman spectroscopy, by assessment of the line width and frequency shift differences between the and A 1g, it was inferred that the MoS2 grown on the silicon substrate was monolayer and that grown on the quartz substrate was multilayer. In addition, open-aperture and close-aperture Z-scan techniques were employed to study the nonlinear optical properties including nonlinear absorption and nonlinear refraction of the grown MoS2. All experiments were performed using a diode laser with a wavelength of 532 nm as the light source. It is noticeable that both samples demonstrate obvious self-defocusing behavior. The monolayer MoS2 grown on the silicon substrate displayed considerable two-photon absorption while, the multilayer MoS2 synthesized on the quartz exhibited saturable absorption. In general, few-layered MoS2 would be useful for the development of nanophotonic devices like optical limiters, optical switchers, etc.

Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

Science.gov (United States)

Colston, Gerard; Myronov, Maksym

2017-11-01

Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

Silicon accumulation and distribution in petunia and sunflower grown in a rice hull-amended substrate

Science.gov (United States)

Silicon (Si) is a plant beneficial element associated with mitigation of abiotic and biotic stresses. Most greenhouse-grown ornamentals are considered low Si accumulators based on foliar Si concentration. However, Si accumulates in all tissues, and there is little published data on the distributio...

Silicon alleviates Cd stress of wheat seedlings (Triticum turgidum L. cv. Claudio) grown in hydroponics

DEFF Research Database (Denmark)

Rizwan, M.; Meunier, J. D.; Davidian, J. C.

2016-01-01

We investigated the potential role of silicon in improving tolerance and decreasing cadmium (Cd) toxicity in durum wheat (Triticum turgidum L. durum) either through a reduced Cd uptake or exclusion/sequestration in non-metabolic tissues. For this, plants were grown in hydroponic conditions for 10...

Defects in Czochralski-grown silicon crystals investigated by positron annihilation

Energy Technology Data Exchange (ETDEWEB)

Ikari, Atsushi; Kawakami, Kazuto; Haga, Hiroyo [Nippon Steel Corp., Sagamihara, Kanagawa (Japan). Electronics Research Labs.; Uedono, Akira; Wei, Long; Kawano, Takao; Tanigawa, Shoichiro

1994-10-01

Positron lifetime and Doppler broadening experiments were performed on Czochralski-grown silicon crystals. A monoenergetic positron beam was also used to measure the diffusion length of positrons in the wafer. From the measurements, it was observed that the value of diffusion length of positrons decreased at the region where microdefects were formed during the crystal growth process. It was also found that the line shape parameter S decreased and the lifetime of positrons increased at the region. These results can be attributed to the annihilation of positrons trapped by vacancy oxygen complexes which are formed in association with the microdefects. (author).

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

Science.gov (United States)

Yoo, H. I.; Iles, P. A.; Tanner, D. P.

1979-01-01

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

Electrical properties of as-grown and proton-irradiated high purity silicon

Energy Technology Data Exchange (ETDEWEB)

Krupka, Jerzy, E-mail: krupka@imio.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Karcz, Waldemar [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna (Russian Federation); Kamiński, Paweł [Institute of Electronic Materials Technology, Wólczyńska 13, 301-919 Warsaw (Poland); Jensen, Leif [Topsil Semiconductor Materials A/S, Siliciumvej 1, DK-3600 Frederikssund (Denmark)

2016-08-01

The complex permittivity of as-grown and proton-irradiated samples of high purity silicon obtained by the floating zone method was measured as a function of temperature at a few frequencies in microwave spectrum by employing the quasi TE{sub 011} and whispering gallery modes excited in the samples under test. The resistivity of the samples was determined from the measured imaginary part of the permittivity. The resistivity was additionally measured at RF frequencies employing capacitive spectroscopy as well as in a standard direct current experiment. The sample of as-grown material had the resistivity of ∼85 kΩ cm at room temperature. The sample irradiated with 23-MeV protons had the resistivity of ∼500 kΩ cm at 295 K and its behavior was typical of the intrinsic material at room and at elevated temperatures. For the irradiated sample, the extrinsic conductivity region is missing and at temperatures below 250 K hopping conductivity occurs. Thermal cycle hysteresis of the resistivity for the sample of as-grown material is observed. After heating and subsequent cooling of the sample, its resistivity decreases and then slowly (∼50 h) returns to the initial value.

Electron-spin-resonance study of radiation-induced paramagnetic defects in oxides grown on (100) silicon substrates

International Nuclear Information System (INIS)

Kim, Y.Y.; Lenahan, P.M.

1988-01-01

We have used electron-spin resonance to investigate radiation-induced point defects in Si/SiO 2 structures with (100) silicon substrates. We find that the radiation-induced point defects are quite similar to defects generated in Si/SiO 2 structures grown on (111) silicon substrates. In both cases, an oxygen-deficient silicon center, the E' defect, appears to be responsible for trapped positive charge. In both cases trivalent silicon (P/sub b/ centers) defects are primarily responsible for radiation-induced interface states. In earlier electron-spin-resonance studies of unirradiated (100) substrate capacitors two types of P/sub b/ centers were observed; in oxides prepared in three different ways only one of these centers, the P/sub b/ 0 defect, is generated in large numbers by ionizing radiation

Stress studies in EFG

Science.gov (United States)

1983-01-01

Stress distributions were calculated for a creep law to predict a rate of plastic deformation. The expected reduction in stresses is obtained. Improved schemes for calculating growth system temperature distributions were evaluated. Temperature field modeling examined the possibility of using horizontal temperature gradients to influence stress distribution in ribbon. The defect structure of 10 cm wide ribbon grown in the cartridge system was examined. A new feature is identified from an examination of cross sectional micrographs. It consists of high density dislocation bands extending through the ribbon thickness. A four point bending apparatus was constructed for high temperature study of the creep response of silicon, to be used to generate defects for comparison with as grown defects in ribbon. The feasibility of laser interferometric techniques for sheet residual stress distribution measurement is examined. The mathematical formalism for calculating residual stress from changes in surface topology caused by an applied stress in a rectangular specimen was developed, and the system for laser interferometric measurement to obtain surface topology data was tested on CZ silicon.

Polarization dependent femtosecond laser modification of MBE-grown III-V nanostructures on silicon

OpenAIRE

Zandbergen, Sander R.; Gibson, Ricky; Amirsolaimani, Babak; Mehravar, Soroush; Keiffer, Patrick; Azarm, Ali; Kieu, Khanh

2017-01-01

We report a novel, polarization dependent, femtosecond laser-induced modification of surface nanostructures of indium, gallium, and arsenic grown on silicon via molecular beam epitaxy, yielding shape control from linear and circular polarization of laser excitation. Linear polarization causes an elongation effect, beyond the dimensions of the unexposed nanostructures, ranging from 88 nm to over 1 um, and circular polarization causes the nanostructures to flatten out or form loops of material,...

Elongation of Flare Ribbons

Energy Technology Data Exchange (ETDEWEB)

Qiu, Jiong; Longcope, Dana W. [Department of Physics, Montana State University, Bozeman MT (United States); Cassak, Paul A. [Department of Physics and Astronomy, West Virginia University, Morgantown WV (United States); Priest, Eric R. [School of Mathematics and Statistics, University of St. Andrews, Fife KY16 9SS, Scotland (United Kingdom)

2017-03-20

We present an analysis of the apparent elongation motion of flare ribbons along the polarity inversion line (PIL), as well as the shear of flare loops in several two-ribbon flares. Flare ribbons and loops spread along the PIL at a speed ranging from a few to a hundred km s{sup −1}. The shear measured from conjugate footpoints is consistent with the measurement from flare loops, and both show the decrease of shear toward a potential field as a flare evolves and ribbons and loops spread along the PIL. Flares exhibiting fast bidirectional elongation appear to have a strong shear, which may indicate a large magnetic guide field relative to the reconnection field in the coronal current sheet. We discuss how the analysis of ribbon motion could help infer properties in the corona where reconnection takes place.

ZnO nanocoral reef grown on porous silicon substrates without catalyst

International Nuclear Information System (INIS)

Abdulgafour, H.I.; Yam, F.K.; Hassan, Z.; AL-Heuseen, K.; Jawad, M.J.

2011-01-01

Research highlights: → Porous silicon (PS) technology is utilized to grow coral reef-like ZnO nanostructures on the surface of Si substrates. → Flower-like aligned ZnO nanorods are fabricated directly onto the silicon substrates through zinc powder evaporation using a simple thermal evaporation method without a catalyst for comparison. → The PL spectra show that for ZnO nanocoral reefs the UV emission shifts slightly towards lower frequency. → This non-catalyst growth technique on the rough surface of substrates may have potential applications in the fabrication of nanoelectronic and nanooptical devices. - Abstract: Porous silicon (PS) technology is utilized to grow coral reef-like ZnO nanostructures on the surface of Si substrates with rough morphology. Flower-like aligned ZnO nanorods are also fabricated directly onto the silicon substrates through zinc powder evaporation using a simple thermal evaporation method without a catalyst for comparison. The characteristics of these nanostructures are investigated using field-emission scanning electron microscopy, grazing-angle X-ray diffraction (XRD), and photoluminescence (PL) measurements of structures grown on both Si and porous Si substrates. The texture coefficient obtained from the XRD spectra indicates that the coral reef-like nanostructures are highly oriented on the porous silicon substrate with decreasing nanorods length and diameter from 800-900 nm to 3.5-5.5 μm and from 217-229 nm to 0.6-0.7 μm, respectively. The PL spectra show that for ZnO nanocoral reefs the UV emission shifts slightly towards lower frequency and the intensity increase with the improvement of ZnO crystallization. This non-catalyst growth technique on the rough surface of substrates may have potential applications in the fabrication of nanoelectronic and nanooptical devices.

ZnO nanocoral reef grown on porous silicon substrates without catalyst

Energy Technology Data Exchange (ETDEWEB)

Abdulgafour, H.I., E-mail: hind_alshaikh@yahoo.com [School of Physics, University Sains Malaysia 11800 Penang (Malaysia); Yam, F.K.; Hassan, Z.; AL-Heuseen, K.; Jawad, M.J. [School of Physics, University Sains Malaysia 11800 Penang (Malaysia)

2011-05-05

Research highlights: > Porous silicon (PS) technology is utilized to grow coral reef-like ZnO nanostructures on the surface of Si substrates. > Flower-like aligned ZnO nanorods are fabricated directly onto the silicon substrates through zinc powder evaporation using a simple thermal evaporation method without a catalyst for comparison. > The PL spectra show that for ZnO nanocoral reefs the UV emission shifts slightly towards lower frequency. > This non-catalyst growth technique on the rough surface of substrates may have potential applications in the fabrication of nanoelectronic and nanooptical devices. - Abstract: Porous silicon (PS) technology is utilized to grow coral reef-like ZnO nanostructures on the surface of Si substrates with rough morphology. Flower-like aligned ZnO nanorods are also fabricated directly onto the silicon substrates through zinc powder evaporation using a simple thermal evaporation method without a catalyst for comparison. The characteristics of these nanostructures are investigated using field-emission scanning electron microscopy, grazing-angle X-ray diffraction (XRD), and photoluminescence (PL) measurements of structures grown on both Si and porous Si substrates. The texture coefficient obtained from the XRD spectra indicates that the coral reef-like nanostructures are highly oriented on the porous silicon substrate with decreasing nanorods length and diameter from 800-900 nm to 3.5-5.5 {mu}m and from 217-229 nm to 0.6-0.7 {mu}m, respectively. The PL spectra show that for ZnO nanocoral reefs the UV emission shifts slightly towards lower frequency and the intensity increase with the improvement of ZnO crystallization. This non-catalyst growth technique on the rough surface of substrates may have potential applications in the fabrication of nanoelectronic and nanooptical devices.

Enhanced piezoelectricity and stretchability in energy harvesting devices fabricated from buckled PZT ribbons.

Science.gov (United States)

Qi, Yi; Kim, Jihoon; Nguyen, Thanh D; Lisko, Bozhena; Purohit, Prashant K; McAlpine, Michael C

2011-03-09

The development of a method for integrating highly efficient energy conversion materials onto soft, biocompatible substrates could yield breakthroughs in implantable or wearable energy harvesting systems. Of particular interest are devices which can conform to irregular, curved surfaces, and operate in vital environments that may involve both flexing and stretching modes. Previous studies have shown significant advances in the integration of highly efficient piezoelectric nanocrystals on flexible and bendable substrates. Yet, such inorganic nanomaterials are mechanically incompatible with the extreme elasticity of elastomeric substrates. Here, we present a novel strategy for overcoming these limitations, by generating wavy piezoelectric ribbons on silicone rubber. Our results show that the amplitudes in the waves accommodate order-of-magnitude increases in maximum tensile strain without fracture. Further, local probing of the buckled ribbons reveals an enhancement in the piezoelectric effect of up to 70%, thus representing the highest reported piezoelectric response on a stretchable medium. These results allow for the integration of energy conversion devices which operate in stretching mode via reversible deformations in the wavy/buckled ribbons.

Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Jogi, Indrek [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)], E-mail: indrek.jogi@ut.ee; Paers, Martti; Aarik, Jaan; Aidla, Aleks [University of Tartu, Institute of Physics, Riia 142, 51014, Tartu (Estonia); Laan, Matti [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia); Sundqvist, Jonas; Oberbeck, Lars; Heitmann, Johannes [Qimonda Dresden GmbH and Co. OHG, Koenigsbruecker Strasse 180, 01099, Dresden (Germany); Kukli, Kaupo [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)

2008-06-02

Conformity and phase structure of atomic layer deposited TiO{sub 2} thin films grown on silicon substrates were studied. The films were grown using TiCl{sub 4} and Ti(OC{sub 2}H{sub 5}){sub 4} as titanium precursors in the temperature range from 125 to 500 {sup o}C. In all cases perfect conformal growth was achieved on patterned substrates with elliptical holes of 7.5 {mu}m depth and aspect ratio of about 1:40. Conformal growth was achieved with process parameters similar to those optimized for the growth on planar wafers. The dominant crystalline phase in the as-grown films was anatase, with some contribution from rutile at relatively higher temperatures. Annealing in the oxygen ambient resulted in (re)crystallization whereas the effect of annealing depended markedly on the precursors used in the deposition process. Compared to films grown from TiCl{sub 4}, the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} were transformed into rutile in somewhat greater extent, whereas in terms of step coverage the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} remained somewhat inferior compared to the films grown from TiCl{sub 4}.

Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells

International Nuclear Information System (INIS)

Arafune, K.; Sasaki, T.; Wakabayashi, F.; Terada, Y.; Ohshita, Y.; Yamaguchi, M.

2006-01-01

We focused on the defects and impurities in polycrystalline silicon substrates, which deteriorate solar cell efficiency. Comparison of the minority carrier lifetime with the grain size showed that the region with short minority carrier lifetimes did not correspond to the region with small grains. Conversely, the minority carrier lifetime decreased as the etch-pit density (EPD) increased, suggesting that the minority carrier lifetime is strongly affected by the EPD. Electron beam induced current measurements revealed that a combination of grain boundaries and point defects had high recombination activity. Regarding impurities, the interstitial oxygen concentration was relatively low compared with that in a Czochralski-grown silicon substrate, the total carbon concentration exceeded the solubility limit of silicon melt. X-ray microprobe fluorescence measurements revealed a large amount of iron in the regions where there were many etch-pits and grain boundaries with etch-pits. X-ray absorption near edge spectrum analysis revealed trapped iron in the form of oxidized iron

Impurity segregation behavior in polycrystalline silicon ingot grown with variation of electron-beam power

Science.gov (United States)

Lee, Jun-Kyu; Lee, Jin-Seok; Jang, Bo-Yun; Kim, Joon-Soo; Ahn, Young-Soo; Cho, Churl-Hee

2014-08-01

Electron beam melting (EBM) systems have been used to improve the purity of metallurgical grade silicon feedstock for photovoltaic application. Our advanced EBM system is able to effectively remove volatile impurities using a heat source with high energy from an electron gun and to continuously allow impurities to segregate at the top of an ingot solidified in a directional solidification (DS) zone in a vacuum chamber. Heat in the silicon melt should move toward the ingot bottom for the desired DS. However, heat flux though the ingot is changed as the ingot becomes longer due to low thermal conductivity of silicon. This causes a non-uniform microstructure of the ingot, finally leading to impurity segregation at its middle. In this research, EB power irradiated on the silicon melt was controlled during the ingot growth in order to suppress the change of heat flux. EB power was reduced from 12 to 6.6 kW during the growth period of 45 min with a drop rate of 0.125 kW/min. Also, the silicon ingot was grown under a constant EB power of 12 kW to estimate the effect of the drop rate of EB power. When the EB power was reduced, the grains with columnar shape were much larger at the middle of the ingot compared to the case of constant EB power. Also, the present research reports a possible reason for the improvement of ingot purity by considering heat flux behaviors.

Fiscal 1974 Sunshine Project result report. R and D on photovoltaic power generation system (R and D on Si ribbon crystal vertical pulling method); 1974 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Silicon tatehiki ribbon kessho no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1975-05-30

This research includes (1) basic study on Si ribbon crystal vertical pulling method, (2) basic design of continuous Si ribbon crystal vertical pulling mechanism, (3) basic study on vertically pulled Si ribbon crystal, (4) study on capillary materials for capillary crystal pulling method, and (5) basic study on AlAs-GaAs system compound semiconductors. In the 1st research, for Si ribbon crystal vertical pulling growth, the ribbon crystal pulling equipment was prepared and modified, and Si crystals were obtained by capillary and web methods. In the 2nd research, for development of Si ribbon crystal vertical pulling growth technology, study was made on the simple energy-saving resource-saving continuous automatic production process. In the 3rd research, measurement was made on various characteristics of ribbon crystals. In the 4th research, study was made on requirements of capillary materials from the viewpoint of capillary growth mechanism. In the 5th research, basic technology for solar cell production was established through growth experiments of AlAs-GaAs mixed crystals and multiple epitaxial crystal layers. (NEDO)

Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry

Science.gov (United States)

Stenberg, Pontus; Booker, Ian D.; Karhu, Robin; Pedersen, Henrik; Janzén, Erik; Ivanov, Ivan G.

2018-04-01

Point defects in n- and p-type 4H-SiC grown by fluorinated chemical vapor deposition (CVD) have been characterized optically by photoluminescence (PL) and electrically by deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). The results are considered in comparison with defects observed in non-fluorinated CVD growth (e.g., using SiH4 instead of SiF4 as silicon precursor), in order to investigate whether specific fluorine-related defects form during the fluorinated CVD growth, which might prohibit the use of fluorinated chemistry for device-manufacturing purposes. Several new peaks identifying new defects appear in the PL of fluorinated-grown samples, which are not commonly observed neither in other halogenated chemistries, nor in the standard CVD chemistry using silane (SiH4). However, further investigation is needed in order to determine their origin and whether they are related to incorporation of F in the SiC lattice, or not. The electric characterization does not find any new electrically-active defects that can be related to F incorporation. Thus, we find no point defects prohibiting the use of fluorinated chemistry for device-making purposes.

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

Science.gov (United States)

Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

2015-11-11

The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

Fatigue resistance, debonding force, and failure type of fiber-reinforced composite, polyethylene ribbon-reinforced, and braided stainless steel wire lingual retainers in vitro

NARCIS (Netherlands)

Foek, Dave Lie Sam; Yetkiner, Enver; Ozcan, Mutlu

Objective: To analyze the fatigue resistance, debonding force, and failure type of fiber-reinforced composite, polyethylene ribbon-reinforced, and braided stainless steel wire lingual retainers in vitro. Methods: Roots of human mandibular central incisors were covered with silicone, mimicking the

Ballistic Phonon Penetration Depth in Amorphous Silicon Dioxide.

Science.gov (United States)

Yang, Lin; Zhang, Qian; Cui, Zhiguang; Gerboth, Matthew; Zhao, Yang; Xu, Terry T; Walker, D Greg; Li, Deyu

2017-12-13

Thermal transport in amorphous silicon dioxide (a-SiO 2 ) is traditionally treated as random walks of vibrations owing to its greatly disordered structure, which results in a mean free path (MFP) approximately the same as the interatomic distance. However, this picture has been debated constantly and in view of the ubiquitous existence of thin a-SiO 2 layers in nanoelectronic devices, it is imperative to better understand this issue for precise thermal management of electronic devices. Different from the commonly used cross-plane measurement approaches, here we report on a study that explores the in-plane thermal conductivity of double silicon nanoribbons with a layer of a-SiO 2 sandwiched in-between. Through comparing the thermal conductivity of the double ribbon samples with that of corresponding single ribbons, we show that thermal phonons can ballistically penetrate through a-SiO 2 of up to 5 nm thick even at room temperature. Comprehensive examination of double ribbon samples with various oxide layer thicknesses and van der Waals bonding strengths allows for extraction of the average ballistic phonon penetration depth in a-SiO 2 . With solid experimental data demonstrating ballistic phonon transport through a-SiO 2 , this work should provide important insight into thermal management of electronic devices.

Covalent functionalization of carbon nanotube forests grown in situ on a metal-silicon chip

KAUST Repository

Johansson, Johan R.

2012-03-12

We report on the successful covalent functionalization of carbon nanotube (CNT) forests, in situ grown on a silicon chip with thin metal contact film as the buffer layer between the CNT forests and the substrate. The CNT forests were successfully functionalized with active amine and azide groups, which can be used for further chemical reactions. The morphology of the CNT forests was maintained after the functionalization. We thus provide a promising foundation for a miniaturized biosensor arrays system that can be easily integrated with Complementary Metal-Oxide Semiconductor (CMOS) technology.

Covalent functionalization of carbon nanotube forests grown in situ on a metal-silicon chip

KAUST Repository

Johansson, Johan R.; Bosaeus, Niklas; Kann, Nina; Å kerman, Bjö rn; Nordé n, Bengt; Khalid, Waqas

2012-01-01

We report on the successful covalent functionalization of carbon nanotube (CNT) forests, in situ grown on a silicon chip with thin metal contact film as the buffer layer between the CNT forests and the substrate. The CNT forests were successfully functionalized with active amine and azide groups, which can be used for further chemical reactions. The morphology of the CNT forests was maintained after the functionalization. We thus provide a promising foundation for a miniaturized biosensor arrays system that can be easily integrated with Complementary Metal-Oxide Semiconductor (CMOS) technology.

Chirality effect in disordered graphene ribbon junctions

International Nuclear Information System (INIS)

Long Wen

2012-01-01

We investigate the influence of edge chirality on the electronic transport in clean or disordered graphene ribbon junctions. By using the tight-binding model and the Landauer-Büttiker formalism, the junction conductance is obtained. In the clean sample, the zero-magnetic-field junction conductance is strongly chirality-dependent in both unipolar and bipolar ribbons, whereas the high-magnetic-field conductance is either chirality-independent in the unipolar or chirality-dependent in the bipolar ribbon. Furthermore, we study the disordered sample in the presence of magnetic field and find that the junction conductance is always chirality-insensitive for both unipolar and bipolar ribbons with adequate disorders. In addition, the disorder-induced conductance plateaus can exist in all chiral bipolar ribbons provided the disorder strength is moderate. These results suggest that we can neglect the effect of edge chirality in fabricating electronic devices based on the magnetotransport in a disordered graphene ribbon. (paper)

Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

Energy Technology Data Exchange (ETDEWEB)

Kalkofen, Bodo, E-mail: bodo.kalkofen@ovgu.de; Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Garke, Bernd [Institute for Experimental Physics, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

2015-05-15

Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

Polycrystalline silicon availability for photovoltaic and semiconductor industries

Science.gov (United States)

Ferber, R. R.; Costogue, E. N.; Pellin, R.

1982-01-01

Markets, applications, and production techniques for Siemens process-produced polycrystalline silicon are surveyed. It is noted that as of 1982 a total of six Si materials suppliers were servicing a worldwide total of over 1000 manufacturers of Si-based devices. Besides solar cells, the Si wafers are employed for thyristors, rectifiers, bipolar power transistors, and discrete components for control systems. An estimated 3890 metric tons of semiconductor-grade polycrystalline Si will be used in 1982, and 6200 metric tons by 1985. Although the amount is expected to nearly triple between 1982-89, research is being carried out on the formation of thin films and ribbons for solar cells, thereby eliminating the waste produced in slicing Czolchralski-grown crystals. The free-world Si production in 1982 is estimated to be 3050 metric tons. Various new technologies for the formation of polycrystalline Si at lower costs and with less waste are considered. New entries into the industrial Si formation field are projected to produce a 2000 metric ton excess by 1988.

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

International Nuclear Information System (INIS)

Jamil, Muhammad; Arif, Ronald A.; Ee, Yik-Khoon; Tong, Hua; Tansu, Nelson; Higgins, John B.

2008-01-01

This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650 C and >3 x 10 5 , respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∝0.3 nm on 2 μm x 2 μm area, while the RMS roughness of the InN film grown on GaN/Si(111) templates is found as ∝0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN(0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Crystal structure of (110) oriented La0.7Sr0.3MnO3 grown on (001) silicon

International Nuclear Information System (INIS)

Sinha, Umesh Kumar; Sahoo, Antarjami; Padhan, Prahallad

2016-01-01

The mixed valance perovskite manganites have attracted a considerable attention due to their colossal magnetoresistance behavior. In particular, La 0.7 Sr 0.3 MnO 3 (LSMO) show half metallicity and possess Curie temperature (T C ) above room temperature, which makes this material an attractive candidate for spintronic device application. Thin films of LSMO were grown on (001) oriented Silicon (Si) using sputtering technique

Ca(2+) influx and neurotransmitter release at ribbon synapses.

Science.gov (United States)

Cho, Soyoun; von Gersdorff, Henrique

2012-01-01

Ca(2+) influx through voltage-gated Ca(2+) channels triggers the release of neurotransmitters at presynaptic terminals. Some sensory receptor cells in the peripheral auditory and visual systems have specialized synapses that express an electron-dense organelle called a synaptic ribbon. Like conventional synapses, ribbon synapses exhibit SNARE-mediated exocytosis, clathrin-mediated endocytosis, and short-term plasticity. However, unlike non-ribbon synapses, voltage-gated L-type Ca(2+) channel opening at ribbon synapses triggers a form of multiquantal release that can be highly synchronous. Furthermore, ribbon synapses appear to be specialized for fast and high throughput exocytosis controlled by graded membrane potential changes. Here we will discuss some of the basic aspects of synaptic transmission at different types of ribbon synapses, and we will emphasize recent evidence that auditory and retinal ribbon synapses have marked differences. This will lead us to suggest that ribbon synapses are specialized for particular operating ranges and frequencies of stimulation. We propose that different types of ribbon synapses transfer diverse rates of sensory information by expressing a particular repertoire of critical components, and by placing them at precise and strategic locations, so that a continuous supply of primed vesicles and Ca(2+) influx leads to fast, accurate, and ongoing exocytosis. Copyright © 2012 Elsevier Ltd. All rights reserved.

Microdefects in an as-grown Czochralski silicon crystal studied by synchrotron radiation section topography with aid of computer simulation

International Nuclear Information System (INIS)

Iida, Satoshi; Aoki, Yoshirou; Okitsu, Kouhei; Sugita, Yoshimitsu; Kawata, Hiroshi; Abe, Takao

1998-01-01

Grown-in microdefects of a Czochralski (CZ) silicon crystal grown at a slow growth rate were studied by section topography using high energy synchrotron radiation. Images of the microdefects in the section topographs were analyzed quantitatively using computer simulation based on the Takagi-Taupin type dynamical diffraction theory of X-rays, and reproduced successfully by the simulation when the microdefects were assumed to be spherical strain centers. Sizes and positions of the microdefects were able to be determined by detailed comparison between the experiments and the computer simulations. The validity of the computer simulation in an analysis of the section topographs is discussed. (author)

Are All Flare Ribbons Simply Connected to the Corona?

Energy Technology Data Exchange (ETDEWEB)

Judge, Philip G. [High Altitude Observatory, National Center for Atmospheric Research, P.O. Box 3000, Boulder, CO 80307-3000 (United States); Paraschiv, Alin; Lacatus, Daniela; Donea, Alina [Monash Center for Astrophysics, School of Mathematical Science, Monash University, Victoria 3800 (Australia); Lindsey, Charlie, E-mail: judge@ucar.edu, E-mail: alina.donea@monash.edu, E-mail: alin.paraschiv@monash.edu, E-mail: daniela.lacatus@monash.edu, E-mail: indsey@cora.nwra.com [Northwest Research Associates, 3380 Mitchell Lane, Boulder, CO 80301 (United States)

2017-04-01

We consider the observational basis for the belief that flare ribbons in the chromosphere result from energy transport from the overlying corona. We study ribbons of small flares using magnetic and intensity data from the Hinode , Solar Dynamics Observatory , and IRIS missions. While most ribbons appear connected to the corona and overlie regions of significant vertical magnetic field, we examine one ribbon with no clear evidence for such connections. Evolving horizontal magnetic fields seen with Hinode suggest that reconnection with preexisting fields below the corona can explain the data. The identification of just one, albeit small, ribbon, with no apparent connection to the corona, leads us to conclude that at least two mechanisms are responsible for the heating that leads to flare ribbon emission.

Geothermal Technologies Program Blue Ribbon Panel Recommendations

Energy Technology Data Exchange (ETDEWEB)

none,

2011-06-17

The Geothermal Technologies Program assembled a geothermal Blue Ribbon Panel on March 22-23, 2011 in Albuquerque, New Mexico for a guided discussion on the future of geothermal energy in the United States and the role of the DOE Program. The Geothermal Blue Ribbon Panel Report captures the discussions and recommendations of the experts. An addendum is available here: http://www.eere.energy.gov/geothermal/pdfs/gtp_blue_ribbon_panel_report_addendum10-2011.pdf

Diagrammatic documentation for ribbon computing in Microsoft Office

Directory of Open Access Journals (Sweden)

Kaveh Farbeh-Tabrizi

Full Text Available In 2007 Microsoft changed the graphical user interface of MS Office, and moved away from the long -established drop down menu approach to a ribbon graphical user interface. There have been mixed reactions to Microsoft\\'s ribbon interface. Ericson (2006 mentioned that even the experienced user might have difficulty adopting the interface, and Dostal (2010 concluded that the biggest issue with the Ribbon User Interface is to get accustomed to a redesigned user interface. Reaction to this change was negative among our new and current students. For years the students had tried to memorise how to apply the right commands in Microsoft Office applications by selecting the correct items from the dropdown menus of the WIMP (windows, icons, menus, pointer interface, and now that they were confronted with the new interface their confusion had begun to slow their progress down. The major effect in transition from the traditional WIMP interface to the Ribbon interface had created a difficulty for most students who had their original training with the older versions of MS Office software, as they were not able to locate the commands that they had learnt with the earlier versions of the MS Office in the new Ribbon interfaced version. The shrinking nature of the ribbon that would hide some commands on the ribbon when the resolution of the screen changes was also confusing for those students as they could not quickly locate the command they were looking for because the Ribbon had compacted them to save space. For both new students and also more experienced ones, the approach to learning the Ribbon Interface seemed to be difficult due to the fact that they had to memorise the hierarchy of tab names, group names and then the commands. This led us to enhance our current teaching methods to try to deal with this change.

ON THE GEOMETRY OF THE IBEX RIBBON

Energy Technology Data Exchange (ETDEWEB)

Sylla, Adama; Fichtner, Horst [Institut für Theoretische Physik IV, Ruhr-Universität Bochum, D-44780 Bochum (Germany)

2015-10-01

The Energetic Neutral Atom (ENA) full-sky maps obtained with the Interstellar Boundary Explorer (IBEX) show an unexpected bright narrow band of increased intensity. This so-called ENA ribbon results from charge exchange of interstellar neutral atoms with protons in the outer heliosphere or beyond. Among other hypotheses it has been argued that this ribbon may be related to a neutral density enhancement, or H-wave, in the local interstellar medium. Here we quantitatively demonstrate, on the basis of an analytical model of the principal large-scale heliospheric structure, that this scenario for the ribbon formation leads to results that are fully consistent with the observed location of the ribbon in the full-sky maps at all energies detected with high-energy sensor IBEX-Hi.

Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates

International Nuclear Information System (INIS)

Anufriev, Roman; Chauvin, Nicolas; Bru-Chevallier, Catherine; Khmissi, Hammadi; Naji, Khalid; Gendry, Michel; Patriarche, Gilles

2013-01-01

Photoluminescence (PL) quantum efficiency (QE) is experimentally investigated, using an integrating sphere, as a function of excitation power on both InAs/InP quantum rod nanowires (QRod-NWs) and radial quantum well nanowires (QWell-NWs) grown on silicon substrates. The measured values of the QE are compared with those of the planar analogues such as quantum dash and quantum well samples, and found to be comparable for the quantum well structures at relatively low power density. Further studies reveal that the values of QE of the QRod-NWs and QWell-NWs are limited by the low quality of the InP NW structure and the quality of radial quantum well, respectively. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Observations and Numerical Modeling of the Jovian Ribbon

Science.gov (United States)

Cosentino, R. G.; Simon, A.; Morales-Juberias, R.; Sayanagi, K. M.

2015-01-01

Multiple wavelength observations made by the Hubble Space Telescope in early 2007 show the presence of a wavy, high-contrast feature in Jupiter's atmosphere near 30 degrees North. The "Jovian Ribbon," best seen at 410 nanometers, irregularly undulates in latitude and is time-variable in appearance. A meridional intensity gradient algorithm was applied to the observations to track the Ribbon's contour. Spectral analysis of the contour revealed that the Ribbon's structure is a combination of several wavenumbers ranging from k equals 8-40. The Ribbon is a dynamic structure that has been observed to have spectral power for dominant wavenumbers which vary over a time period of one month. The presence of the Ribbon correlates with periods when the velocity of the westward jet at the same location is highest. We conducted numerical simulations to investigate the stability of westward jets of varying speed, vertical shear, and background static stability to different perturbations. A Ribbon-like morphology was best reproduced with a 35 per millisecond westward jet that decreases in amplitude for pressures greater than 700 hectopascals and a background static stability of N equals 0.005 per second perturbed by heat pulses constrained to latitudes south of 30 degrees North. Additionally, the simulated feature had wavenumbers that qualitatively matched observations and evolved throughout the simulation reproducing the Jovian Ribbon's dynamic structure.

The ribbon microphone - an educational aid: use of a ribbon microphone to teach multi-discipline computer simulation skills

CSIR Research Space (South Africa)

Van Wyk, Marius

2016-07-01

Full Text Available The ribbon microphone serves as an excellent aid to learn computer simulation and computational skills. Simulation of this seemingly simple device is all but trivial. The ribbon microphone is an all-in-one example for simulations in acoustics...

Electrostatics-Driven Hierarchical Buckling of Charged Flexible Ribbons.

Science.gov (United States)

Yao, Zhenwei; Olvera de la Cruz, Monica

2016-04-08

We investigate the rich morphologies of an electrically charged flexible ribbon, which is a prototype for many beltlike structures in biology and nanomaterials. Long-range electrostatic repulsion is found to govern the hierarchical buckling of the ribbon from its initially flat shape to its undulated and out-of-plane twisted conformations. In this process, the screening length is the key controlling parameter, suggesting that a convenient way to manipulate the ribbon morphology is simply to change the salt concentration. We find that these shapes originate from the geometric effect of the electrostatic interaction, which fundamentally changes the metric over the ribbon surface. We also identify the basic modes by which the ribbon reshapes itself in order to lower the energy. The geometric effect of the physical interaction revealed in this Letter has implications for the shape design of extensive ribbonlike materials in nano- and biomaterials.

Carbon nanotube fiber spun from wetted ribbon

Science.gov (United States)

Zhu, Yuntian T; Arendt, Paul; Zhang, Xiefei; Li, Qingwen; Fu, Lei; Zheng, Lianxi

2014-04-29

A fiber of carbon nanotubes was prepared by a wet-spinning method involving drawing carbon nanotubes away from a substantially aligned, supported array of carbon nanotubes to form a ribbon, wetting the ribbon with a liquid, and spinning a fiber from the wetted ribbon. The liquid can be a polymer solution and after forming the fiber, the polymer can be cured. The resulting fiber has a higher tensile strength and higher conductivity compared to dry-spun fibers and to wet-spun fibers prepared by other methods.

Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

Directory of Open Access Journals (Sweden)

Nazek El-Atab

2013-10-01

Full Text Available A thin-film ZnO(n/Si(p+ heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM AC-in-Air method in addition to conductive AFM (CAFM were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON ∼3.5 V. The measured breakdown voltage (VBR and electric field (EBR for this diode are 5.4 V and 3.86 MV/cm, respectively.

Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon

Science.gov (United States)

Ueki, Takemi; Itsumi, Manabu; Takeda, Tadao

1998-04-01

We analyzed the side-wall structure of grown-in octahedral defects in Czochralski silicon standard wafers for large-scale integrated circuits. There are two types of twin octahedral defects: an overlapping type and an adjacent type. In the twin octahedral defects of the overlapping type, a hole is formed in the connection part. The side-wall layer in the hole part is formed continually and is the same thickness as the side-wall layers of both octahedrons. In the twin octahedral defects of the adjacent type, a partition layer is formed in the connection part. Our electron energy-loss spectroscopy analyses identified that the side-wall layer includes SiO2.

Fiscal 1976 Sunshine Project result report. R and D on photovoltaic power generation system (R and D on Si ribbon crystal vertical pulling method); 1976 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Silicon tatehiki ribbon kessho no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1977-03-31

This report describes the fiscal 1976 research result on Si ribbon crystal vertical pulling method for photovoltaic power generation systems. The equipment for simultaneous growth of 3 ribbon crystals was designed and prepared in consideration of capillary die arrangement, vertical pulling method and control method of temperature profiles on the die surface. The temperature profiles on the die surface were controlled by subheaters for 3 parts of each capillary die which were divided longitudinally. Ribbon crystals grew up to 5mm simultaneously through both end dies. By cooling a part of crystal, fast pulling is probably possible. Study was made on the correlation between various crystal defects of Si ribbon crystals and cell characteristics, and in particular, basic characteristics of SiC deposited particles by SEM observation to reduce their impacts. Possibility of simultaneous vertical pulling of crystals was verified by using a capillary carbon die for multi-pulling. Although crystals grew by eutectic reaction under saturated dissolution of carbon, crystals with no transition were obtained. An SiC-coated die was excellent rather than carbon one. (NEDO)

Silicon crystal growth using a liquid-feeding Czochralski method

Science.gov (United States)

Shiraishi, Yutaka; Kurosaka, Shoei; Imai, Masato

1996-09-01

Silicon single crystals with uniformity along the growth direction were grown using a new continuous Czochralski (CCZ) method. Polycrystalline silicon rods used as charge materials are melted by carbon heaters over a crucible without contact between the raw material and other substances. Using this method, silicon crystals with diameters as large as 6 or 8 inch and good uniformity along the growth direction were grown.

Graphene oxide coated with porous iron oxide ribbons for 2, 4-Dichlorophenoxyacetic acid (2,4-D) removal.

Science.gov (United States)

Nethaji, S; Sivasamy, A

2017-04-01

Graphene oxide (GO) was prepared from commercially available graphite powder. Porous iron oxide ribbons were grown on the surface of GO by solvothermal process. The prepared GO-Fe 3 O 4 nanocomposites are characterized by FT-IR, XRD, VSM, SEM, TEM, Raman spectroscopy, surface functionality and zero point charge studies. The morphology of the iron oxide ribbons grown on GO is demonstrated with TEM at various magnifications. The presence of magnetite nanoparticles is evident from XRD peaks and the magnetization value is found to be 37.28emu/g. The ratio of intensity of D-peak to G-peak from Raman spectrum is 0.995. The synthesized Graphene oxide-Fe 3 O 4 nanocomposites (GO-Fe 3 O 4 ) were explored for its surface adsorptive properties by using a model organic compound, 2,4-Dichlorophenoxy acetic acid (2,4-D) from aqueous solution. Batch adsorption studies were performed and the equilibrium data are modelled with Langmuir, Freundlich and Temkin isotherms. The maximum monolayer capacity from Langmuir isotherm is 67.26mg/g. Kinetic studies were also carried out and the studied adsorption process followed pseudo second-order rate equation. Mechanism of the adsorption process is studied by fitting the data with intraparticle diffusion model and Boyd plot. The studied adsorption process is both by film diffusion and intraparticle diffusion. Copyright © 2017 Elsevier Inc. All rights reserved.

Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

Energy Technology Data Exchange (ETDEWEB)

Piñero, J.C., E-mail: josecarlos.pinero@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510, Puerto Real, Cádiz (Spain); Araújo, D.; Pastore, C.E.; Gutierrez, M. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510, Puerto Real, Cádiz (Spain); Frigeri, C. [Istituto CNR-IMEM Parco Area delle Scienze 37/A, Fontanini, 43010, Parma (Italy); Benali, A.; Lelièvre, J.F.; Gendry, M. [INL-Institut des Nanotechnologies de Lyon, UMR 5270 Ecole Centrale de Lyon 36, Avenue Guy de Collongue, 69134, Ecully Cedex (France)

2017-02-15

Highlights: • A TEM-HREM study of GaAs nanowires, growth over Si, is presented. • Misfit dislocations are detected in the Si/GaAs magma interface. • The study demonstrates strain relaxation through twin formation in some nanowires. - Abstract: To integrate materials with large lattice mismatch as GaAs on silicon (Si) substrate, one possible approach, to improve the GaAs crystalline quality, is to use nanowires (NWs) technology. In the present contribution, NWs are grown on <111> oriented Si substrates by molecular beam epitaxy (MBE) using vapor-liquid-solid (VLS) method. Transmission electron microscopy (TEM) analyses show that NWs are mainly grown alternating wurtzite and zinc blend (ZB) phases, and only few are purely ZB. On the latter, High Resolution Electron Microscopy (HREM) evidences the presence of twins near the surface of the NW showing limited concordance with the calculations of Yuan (2013) [1], where {111} twin planes in a <111>-oriented GaAs NW attain attractive interactions mediated by surface strain. In addition, such twins allow slight strain relaxation and are probably induced by the local huge elastic strain observed by HREM in the lattice between the twin and the surface. The latter is attributed to some slight bending of the NW as shown by the inversion of the strain from one side to the other side of the NW.

Investigation of structural and magnetic properties of rapidly-solidified iron-silicon alloys at ambient and elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Jayaraman, T. V.; Meka, V. M.; Jiang, X.; Overman, N. R.; Doyle, J.; Shield, J. E.; Mathaudhu, S. N.

2018-04-01

In this work, we investigated the ambient temperature structural properties (~300 K) and the ambient and high temperature (up to 900 K) direct current (DC) magnetic properties of melt-spun Fe-x wt.% Si (x = 3, 5, & 8) alloys. The wheel surface speeds selected for the study were 30 m/s and 40 m/s. The thickness, width, lattice parameter, saturation magnetization (MS), and intrinsic coercivity (HCI) of the melt spun ribbons are presented and compared with data in the literature. The ribbons produced at the lower wheel surface speed (30 m/s) were continuous having relatively uniform edges compared to the ribbons produced at the higher wheel surface speed. The thickness and the width of the melt-spun ribbons ranged between ~15-60 μm and 500-800 μm, respectively. The x-ray diffraction spectra of the melt-spun ribbons indicated the presence of disordered α-phase, irrespective of the composition, and the wheel-surface speed. The lattice parameter decreased gradually as a function of increasing silicon content from ~0.2862 nm (Fe-3 wt.% Si) to ~0.2847 nm (Fe-8 wt.% Si). Wheel surface speed was not shown to have a significant effect on the magnetization, but primarily impacted the ribbon structure. A decreasing trend in the saturation magnetization was observed as a function of increased silicon content. The intrinsic coercivity of the melt-spun alloys ranged between ~50 to 200 A/m. Elevated temperature evaluation of the magnetization in the case of Fe-3 & 5 wt.% Si alloy ribbons was distinctly different from the Fe-8 wt.% Si alloy ribbons. The curves of the as-prepared Fe-3 wt.% Si and Fe-5 wt.% Si alloy ribbons were irreversible while that of Fe-8 wt.% Si was reversible. The MS for any of the combinations of wheel surface speed and composition decreased monotonically with the increase in temperature (from 300 – 900 K). The percentage decrease in MS from 300 K to 900 K for the Fe-3 wt.% Si and Fe-5 wt.% Si alloys was ~19-22 %, while the percentage decrease in the same

Engineering piezoresistivity using biaxially strained silicon

DEFF Research Database (Denmark)

Pedersen, Jesper Goor; Richter, Jacob; Brandbyge, Mads

2008-01-01

of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity...

Fifth workshop on the role of impurities and defects in silicon device processing. Extended abstracts

Energy Technology Data Exchange (ETDEWEB)

Sopori, B.L.; Luque, A.; Sopori, B.; Swanson, D.; Gee, J.; Kalejs, J.; Jastrzebski, L.; Tan, T.

1995-08-01

This workshop dealt with engineering aspects and material properties of silicon electronic devices. Crystalline silicon growth, modeling, and properties are discussed in general and as applied to solar cells. Topics considered in discussions of silicon growth include: casting, string ribbons, Al backside contacts, ion implantation, gettering, passivation, and ultrasound treatments. Properties studies include: Electronic properties of defects and impurities, dopant and carrier concentrations, structure and bonding, nitrogen effects, degradation of bulk diffusion length, and recombination parameters. Individual papers from the workshop are indexed separately on the Energy Data Bases.

Magnetic and sensitive magnetoelastic properties of Finemet nanostructured ribbon

International Nuclear Information System (INIS)

Pham Duc Thang; Hoang Hai Duong; Nguyen Hoang Nghi

2009-01-01

Soft-magnetic Fe 73.5 Cu 1 Nb 3 Si 13.5 B 9 (Finemet) ribbon has been fabricated by using melt-spinning techniques. After annealing at suitable temperature the ribbon changes from an amorphous to crystalline state which related to the formation of Fe nanocrystallites. Study on the magnetic and magnetoelastic properties of the ribbon is presented. Furthermore, based on the fabricated ribbon stress sensors are simply constructed. The sensors showed high sensitivity of 3.8 mV/MPa as well as a wide working range up to 17 MPa. These sensors are potential for practical applications such as detecting small stress and movement in civil structures.

Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

KAUST Repository

Heo, Junseok

2013-10-01

GaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In0.3Ga 0.7N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In0.3Ga0.7N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively. © 2013 AIP Publishing LLC.

Decade of PV Industry R and D Advances in Silicon Module Manufacturing

Energy Technology Data Exchange (ETDEWEB)

Symko-Davis, M.; Mitchell, R.L.; Witt, C.E.; Thomas, H.P. [National Renewable Energy Laboratory; King, R.[U.S. Department of Energy; Ruby, D.S. [Sandia National Laboratories

2001-01-18

The US Photovoltaic (PV) industry has made significant technical advances in crystalline silicon (Si) module manufacturing through the PV Manufacturing R and D Project during the past decade. Funded Si technologies in this project have been Czochralski, cast polycrystalline, edge-defined film-fed growth (EFG) ribbon, string ribbon, and Si-film. Specific R and D Si module-manufacturing categories that have shown technical growth and will be discussed are in crystal growth and processing, wafering, cell fabrication, and module manufacturing. These R and D advancements since 1992 have contributed to a 30% decrease in PV manufacturing costs and stimulated a sevenfold increase in PV production capacity.

Impact of deposition temperature on the properties of SnS thin films grown over silicon substrate—comparative study of structural and optical properties with films grown on glass substrates

Science.gov (United States)

Assili, Kawther; Alouani, Khaled; Vilanova, Xavier

2017-11-01

Tin sulfide (SnS) thin films were chemically deposited over silicon substrate in a temperature range of 250 °C-400 °C. The effects of deposition temperature on the structural, morphological and optical properties of the films were evaluated. All films present an orthorhombic SnS structure with a preferred orientation along (040). High absorption coefficients (in the range of 105 cm-1) were found for all obtained films with an increase in α value when deposition temperature decreases. Furthermore, the effects of substrate type were investigated based on comparison between the present results and those obtained for SnS films grown under the same deposition conditions but over glass substrate. The results suggest that the formation of SnS films onto glass substrate is faster than onto silicon substrate. It is found that the substrate nature affects the orientation growth of the films and that SnS films deposited onto Si present more defects than those deposited onto glass substrate. The optical transmittance is also restricted by the substrate type, mostly below 1000 nm. The obtained results for SnS films onto silicon suggest their promising integration within optoelectronic devices.

Wrinkles, loops, and topological defects in twisted ribbons

Science.gov (United States)

Chopin, Julien

Nature abounds with elastic ribbon like shapes including double-stranded semiflexible polymers, graphene and metal oxide nanoribbons which are examples of elongated elastic structures with a strongly anisotropic cross-section. Due to this specific geometry, it is far from trivial to anticipate if a ribbon should be considered as a flat flexible filament or a narrow thin plate. We thus perform an experiment in which a thin elastic ribbon is loaded using a twisting and traction device coupled with a micro X-ray computed tomography machine allowing a full 3D shape reconstruction. A wealth of morphological behaviors can be observed including wrinkled helicoids, curled and looped configurations, and faceted ribbons. In this talk, I will show that most morphologies can be understood using a far-from-threshold approach and simple scaling arguments. Further, we find that the various shapes can be organized in a phase diagram using the twist, the tension, and the geometry of the ribbon as control parameters. Finally, I will discuss the spontaneous formation of topological defects with negatively-signed Gaussian charge at large twist and small but finite stretch.

Solution-Grown Silicon Nanowires for Lithium-Ion Battery Anodes

KAUST Repository

Chan, Candace K.; Patel, Reken N.; O’ Connell, Michael J.; Korgel, Brian A.; Cui, Yi

2010-01-01

Composite electrodes composed of silicon nanowires synthesized using the supercritical fluid-liquid-solid (SFLS) method mixed with amorphous carbon or carbon nanotubes were evaluated as Li-ion battery anodes. Carbon coating of the silicon nanowires

Transport Measurements and Synchrotron-Based X-Ray Absorption Spectroscopy of Iron Silicon Germanide Grown by Molecular Beam Epitaxy

Science.gov (United States)

Elmarhoumi, Nader; Cottier, Ryan; Merchan, Greg; Roy, Amitava; Lohn, Chris; Geisler, Heike; Ventrice, Carl, Jr.; Golding, Terry

2009-03-01

Some of the iron-based metal silicide and germanide phases have been predicted to be direct band gap semiconductors. Therefore, they show promise for use as optoelectronic materials. We have used synchrotron-based x-ray absorption spectroscopy to study the structure of iron silicon germanide films grown by molecular beam epitaxy. A series of Fe(Si1-xGex)2 thin films (2000 -- 8000å) with a nominal Ge concentration of up to x = 0.04 have been grown. X-ray absorption near edge structure (XANES) and extended x-ray absorption fine structure (EXAFS) measurements have been performed on the films. The nearest neighbor co-ordination corresponding to the β-FeSi2 phase of iron silicide provides the best fit with the EXAFS data. Temperature dependent (20 coefficient was calculated. Results suggest semiconducting behavior of the films which is consistent with the EXAFS results.

Modeling of inter-ribbon tunneling in graphene

OpenAIRE

Van de Put, Maarten L.; Vandenberghe, William G.; Sorée, Bart; Magnus, Wim; Fischetti, Massimo

2015-01-01

The tunneling current between two crossed graphene ribbons is described invoking the empirical pseudopotential approximation and the Bardeen transfer Hamiltonian method. Results indicate that the density of states is the most important factor determining the tunneling current between small (nm) ribbons. The quasi-one dimensional nature of graphene nanoribbons is shown to result in resonant tunneling.

Dosimetry of wires and single ribbons of Iridium 192; Dosimetria de alambres y ribbons individuales de Iridio-192

Energy Technology Data Exchange (ETDEWEB)

Mazzucco, L.D. [Centro Medico Nuclear S.R.L. San Juan (Argentina)

1998-12-31

The objective of this work is in order to present in table formats the dosimetry of wires and single ribbons of Iridium with lengths 1-12 cm for each one linear source along the bisector which is perpendicular at tissue sources (water) computed for linear activity 1 mCi/cm in the case of wires, and 1 mCi/seed for ribbons. The above tables are of direct use, adaptable at particular cases so they facilitate logarithmic graphics of doses in function of the distance for interpolation and use in the treatments planning. It was shown that for two sources with identical linear activity and total length, one of the equidistant seeds at 1 cm (ribbon) and one wire on the other hand, the differences in dose rates in near positions can be about the 15% so corroborating that it is not possible to use wire tables for seeds neither vice versa. Moreover it was elaborated tables of practical direct use for dose rate in water at c Gy/hr for wires and Ribbons 1-12 cm length and from 0.5-10 cm of distance in the perpendicular bisector at the Iridium implant. (Author)

Electronic properties and mechanical strength of β-phosphorene nano-ribbons

Energy Technology Data Exchange (ETDEWEB)

Swaroop, Ram; Bhatia, Pradeep; Kumar, Ashok, E-mail: ashok@cup.ac.in [Centre for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India-151001 (India)

2016-05-06

We have performed first principles calculations to find out the effect of mechanical strain on the electronic properties of zig-zag edged nano ribbons of β-phosphorene. It is found that electronic band-gap get opened-up to 2.61 eV by passivation of the edges of ribbons. Similarly, the mechanical strength is found to be increase from 1.75 GPa to 2.65 GPa on going from unpassivated nano ribbons to passivated ones along with the 2% increase in ultimate tensile strain. The band-gap value of passivated ribbon gets decreased to 0.43 eV on applying strain up to which the ribbon does not break. These tunable properties of β-phospherene with passivation with H-atom and applying mechanical strain offer its use in tunable nano electronics.

Position-controlled epitaxial III-V nanowires on silicon

Energy Technology Data Exchange (ETDEWEB)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

2006-06-14

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

Position-controlled epitaxial III-V nanowires on silicon

International Nuclear Information System (INIS)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

Structure and magnetic properties of Alnico ribbons

Science.gov (United States)

Zhang, Ce; Li, Ying; Han, Xu-Hao; Du, Shuai-long; Sun, Ji-bing; Zhang, Ying

2018-04-01

Al-Ni-Co alloy has been widely applied in various industrial fields due to its excellent thermal and magnetic stability. In this paper, new Al-Ni-Co ribbons are prepared by simple processes combining melt-spinning with annealing, and their phase transition, microstructure and magnetic properties are studied. The results show that after as-spun ribbons are annealed, the grain size of ribbons increases from 1.1 ± 0.3 μm to 4.8 ± 0.8 μm, but still much smaller than that of the bulk Al-Ni-Co alloy manufactured by traditional technologies. In addition, some rod-like Al70Co20Ni10-type, Al9Co2-type and Fe2Nb-type phases are precipitated at grain boundaries; simultaneously, the distinct spinodal decomposition microstructure with periodic ingredient variation is thoroughly formed in all grains by the reaction of α → α1 + α2. Furthermore, the α1 and α2 distribute alternately like a maze, the Fe-Co-rich α1 phase holds 35.9-47.3 vol%, while the Al-Ni-rich α2 phase occupies the rest. Finally, the coercivity of annealed ribbons can reach to 485.3 ± 76.6 Oe. If the annealed ribbons are further aged at 560 °C, their Hc even increases to 738.1 ± 81.0 Oe. The coercivity mechanism is discussed by the combination of microstructure and domain structure.

Synaptic ribbon. Conveyor belt or safety belt?

Science.gov (United States)

Parsons, T D; Sterling, P

2003-02-06

The synaptic ribbon in neurons that release transmitter via graded potentials has been considered as a conveyor belt that actively moves vesicles toward their release sites. But evidence has accumulated to the contrary, and it now seems plausible that the ribbon serves instead as a safety belt to tether vesicles stably in mutual contact and thus facilitate multivesicular release by compound exocytosis.

Bending cyclic load test for crystalline silicon photovoltaic modules

Science.gov (United States)

Suzuki, Soh; Doi, Takuya; Masuda, Atsushi; Tanahashi, Tadanori

2018-02-01

The failures induced by thermomechanical fatigue within crystalline silicon photovoltaic modules are a common issue that can occur in any climate. In order to understand these failures, we confirmed the effects of compressive or tensile stresses (which were cyclically loaded on photovoltaic cells and cell interconnect ribbons) at subzero, moderate, and high temperatures. We found that cell cracks were induced predominantly at low temperatures, irrespective of the compression or tension applied to the cells, although the orientation of cell cracks was dependent on the stress applied. The fracture of cell interconnect ribbons was caused by cyclical compressive stress at moderate and high temperatures, and this failure was promoted by the elevation of temperature. On the basis of these results, the causes of these failures are comprehensively discussed in relation to the viscoelasticity of the encapsulant.

A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

Science.gov (United States)

Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

1980-01-01

Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

Experimental investigation of the ribbon-array ablation process

International Nuclear Information System (INIS)

Li Zhenghong; Xu Rongkun; Chu Yanyun; Yang Jianlun; Xu Zeping; Ye Fan; Chen Faxin; Xue Feibiao; Ning Jiamin; Qin Yi; Meng Shijian; Hu Qingyuan; Si Fenni; Feng Jinghua; Zhang Faqiang; Chen Jinchuan; Li Linbo; Chen Dingyang; Ding Ning; Zhou Xiuwen

2013-01-01

Ablation processes of ribbon-array loads, as well as wire-array loads for comparison, were investigated on Qiangguang-1 accelerator. The ultraviolet framing images indicate that the ribbon-array loads have stable passages of currents, which produce axially uniform ablated plasma. The end-on x-ray framing camera observed the azimuthally modulated distribution of the early ablated ribbon-array plasma and the shrink process of the x-ray radiation region. Magnetic probes measured the total and precursor currents of ribbon-array and wire-array loads, and there exists no evident difference between the precursor currents of the two types of loads. The proportion of the precursor current to the total current is 15% to 20%, and the start time of the precursor current is about 25 ns later than that of the total current. The melting time of the load material is about 16 ns, when the inward drift velocity of the ablated plasma is taken to be 1.5 × 10 7 cm/s.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Nanostructure and magnetic properties of Ni-substituted finemet ribbons

International Nuclear Information System (INIS)

Iturriza, N.; Fernandez, L.; Ipatov, M.; Vara, G.; Pierna, A.R.; Val, J.J. del; Chizhik, A.; Gonzalez, J.

2007-01-01

Magnetic anisotropy has been induced during the nanocrystallization process of Ni-rich amorphous ferromagnetic (Finemet) ribbons by means of the application of a constant stress during the annealing process. Magnetization measurements have evidenced the anisotropy of the treated samples. The main goal of this work was the analysis of the treated ribbons using X-ray Diffraction (XRD), Transmission Electronic Microscopy (TEM) and Atomic Force Microscopy (AFM). AFM measurements revealed in all the cases a strong nanocrystallisation of the surface without evidences of amorphous matrix, which contrast with XRD and TEM measurements that have shown a high content of amorphous phase in the bulk of the ribbons. Magneto-optical Kerr effect measurements show much higher coercive field values than in the bulk, indicating a complex magnetic behavior for the surface of the ribbons

Blue Ribbon Panel Report

Science.gov (United States)

An NCI Cancer Currents blog by the NCI acting director thanking the cancer community for contributing to the Cancer Moonshot Blue Ribbon Panel report, which was presented to the National Cancer Advisory Board on September 7.

Effects of varying oxygen partial pressure on molten silicon-ceramic substrate interactions

Science.gov (United States)

Ownby, D. P.; Barsoum, M. W.

1980-01-01

The silicon sessile drop contact angle was measured on hot pressed silicon nitride, silicon nitride coated on hot pressed silicon nitride, silicon carbon coated on graphite, and on Sialon to determine the degree to which silicon wets these substances. The post-sessile drop experiment samples were sectioned and photomicrographs were taken of the silicon-substrate interface to observe the degree of surface dissolution and degradation. Of these materials, silicon did not form a true sessile drop on the SiC on graphite due to infiltration of the silicon through the SiC coating, nor on the Sialon due to the formation of a more-or-less rigid coating on the liquid silicon. The most wetting was obtained on the coated Si3N4 with a value of 42 deg. The oxygen concentrations in a silicon ribbon furnace and in a sessile drop furnace were measured using the protable thoria-yttria solid solution electrolyte oxygen sensor. Oxygen partial pressures of 10 to the minus 7 power atm and 10 to the minus 8 power atm were obtained at the two facilities. These measurements are believed to represent nonequilibrium conditions.

On red-shift of UV photoluminescence with decreasing size of silicon nanoparticles embedded in SiO2 matrix grown by pulsed laser deposition

International Nuclear Information System (INIS)

Chaturvedi, Amita; Joshi, M.P.; Rani, Ekta; Ingale, Alka; Srivastava, A.K.; Kukreja, L.M.

2014-01-01

Ensembles of silicon nanoparticles (Si-nps) embedded in SiO 2 matrix were grown by alternate ablation of Si and SiO 2 targets using KrF excimer laser based pulsed laser deposition (PLD). The sizes of Si-nps (mean size ranging from 1–5 nm) were controlled by varying the ablation time of silicon target. Transmission electron microscopy (TEM) along with selected area electron diffraction (SAED) and Raman spectroscopy were used to confirm the growth of silicon nanoparticles, its size variation with growth time and the crystalline quality of the grown nanoparticles. TEM analysis showed that mean size and size distribution of Si-nps increased with increase in the ablation time of Si target. Intense peaks ∼521 cm −1 in Raman analysis showed reasonably good crystalline quality of grown Si-nps. We observed asymmetric broadening of phonon line shapes which also redshift with decreasing size of Si-nps. Photoluminescence (PL) from these samples, obtained at room temperature, was broad band and consisted of three bands in UV and visible range. The intensity of PL band in UV spectral range (peak ∼3.2 eV) was strong compared to visible range bands (peaks ∼2.95 eV and ∼2.55 eV). We observed a small red-shift (∼0.07 eV) of peak position of UV range PL with the decrease in the mean sizes of Si-nps, while there was no appreciable size dependent shift of PL peak positions for other bands in the visible range. The width of UV PL band was also found to increase with decrease of Si-nps mean sizes. Based on the above observations of size dependent redshift of UV range PL band together with the PL lifetimes and PL excitation spectroscopy, the origin of UV PL band is attributed to the direct band transition at the Γ point of Si band structure. Visible range bands were ascribed as defect related transitions. The weak intensities of PL bands ∼2.95 eV and ∼2.55 eV suggested that Si nanoparticles grown by PLD were efficiently capped or passivated by SiO 2 with low density of

Growth, Carbon Isotope Discrimination and Nitrogen Uptake in Silicon and/or Potassium Fed barley Grown under Two Watering Regimes

OpenAIRE

Kurdali, Fawaz; Al-Chammaa, Mohammad

2013-01-01

The present pot experiment was an attempt to monitor the beneficial effects of silicon (Si) and/or potassium (K) applications on growth and nitrogen uptake in barley plants grown under water (FC1) and non water (FC2) stress conditions using 15N and 13C isotopes. Three fertilizer rates of Si (Si 50, Si 100 and Si 200) and one fertilizer rate of K were used. Dry matter (DM) and N yield (NY) in different plant parts of barley plants was affected by Si and/ or K fertilization as well as by the wa...

VLS-grown diffusion doped ZnO nanowires and their luminescence properties

International Nuclear Information System (INIS)

Roy, Pushan Guha; Dutta, Amartya; Das, Arpita; Bhattacharyya, Anirban; Sen, Sayantani; Pramanik, Pallabi

2015-01-01

Zinc Oxide (ZnO) nanowires were deposited by vapor–liquid–solid (VLS) method on to aluminum doped ZnO (AZO) thin films grown by sol-gel technique. For various device applications, current injection into such nanowires is critical. This is expected to be more efficient for ZnO nanowires deposited on to AZO compared to those deposited on to a foreign substrate such as silicon. In this work we compare the morphological and optical properties of nanowires grown on AZO with those grown under similar conditions on silicon (Si) wafers. For nanowires grown on silicon, diameters around 44 nm with heights around 2.2 μm were obtained. For the growth on to AZO, the diameters were around 90 nm while the heights were around 520 nm. Room temperature photoluminescence (RT-PL) measurements show improved near band-edge emission for nanowires grown on to AZO, indicating higher material quality. This is further established by low temperature photoluminescence (LT-PL) measurements where excitonic transitions with width as small as 14 meV have been obtained at 4 K for such structures. Electron energy loss spectroscopy (EELS) studies indicate the presence of Al in the nanowires, indicating a new technique for introduction of dopants into these structures. These results indicate that ZnO nanowires on sol-gel grown AZO thin films show promise in the development of various optoelectronic devices. (paper)

THE NATURE OF FLARE RIBBONS IN CORONAL NULL-POINT TOPOLOGY

International Nuclear Information System (INIS)

Masson, S.; Aulanier, G.; Pariat, E.; Schrijver, C. J.

2009-01-01

Flare ribbons are commonly attributed to the low-altitude impact, along the footprints of separatrices or quasi-separatrix layers (QSLs), of particle beams accelerated through magnetic reconnection. If reconnection occurs at a three-dimensional coronal magnetic null point, the footprint of the dome-shaped fan surface would map a closed circular ribbon. This paper addresses the following issues: does the entire circular ribbon brighten simultaneously, as expected because all fan field lines pass through the null point? And since the spine separatrices are singular field lines, do spine-related ribbons look like compact kernels? What can we learn from these observations about current sheet formation and magnetic reconnection in a null-point topology? The present study addresses these questions by analyzing Transition Region and Coronal Explorer and Solar and Heliospheric Observatory/Michelson Doppler Imager observations of a confined flare presenting a circular ribbon. Using a potential field extrapolation, we linked the circular shape of the ribbon with the photospheric mapping of the fan field lines originating from a coronal null point. Observations show that the flare ribbon outlining the fan lines brightens sequentially along the counterclockwise direction and that the spine-related ribbons are elongated. Using the potential field extrapolation as initial condition, we conduct a low-β resistive magnetohydrodynamics simulation of this observed event. We drive the coronal evolution by line-tied diverging boundary motions, so as to emulate the observed photospheric flow pattern associated with some magnetic flux emergence. The numerical analysis allows us to explain several observed features of the confined flare. The vorticity induced in the fan by the prescribed motions causes the spines to tear apart along the fan. This leads to formation of a thin current sheet and induces null-point reconnection. We also find that the null point and its associated topological

Generation Mechanisms of Quasi-parallel and Quasi-circular Flare Ribbons in a Confined Flare

Energy Technology Data Exchange (ETDEWEB)

Hernandez-Perez, Aaron; Thalmann, Julia K.; Veronig, Astrid M.; Dickson, Ewan C. [IGAM/Institute of Physics, University of Graz, A-8010 Graz (Austria); Su, Yang [Key Laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory Chinese Academy of Sciences, 2 West Beijing Road, 210008 Nanjing (China); Gömöry, Peter, E-mail: aaron.hernandez-perez@uni-graz.at [Astronomical Institute, Slovak Academy of Sciences, 05960 Tatranská Lomnica (Slovakia)

2017-10-01

We analyze a confined multiple-ribbon M2.1 flare (SOL2015-01-29T11:42) that originated from a fan-spine coronal magnetic field configuration, within active region NOAA 12268. The observed ribbons form in two steps. First, two primary ribbons form at the main flare site, followed by the formation of secondary ribbons at remote locations. We observe a number of plasma flows at extreme-ultraviolet temperatures during the early phase of the flare (as early as 15 minutes before the onset) propagating toward the formation site of the secondary ribbons. The secondary ribbon formation is co-temporal with the arrival of the pre-flare generated plasma flows. The primary ribbons are co-spatial with Ramaty High Energy Spectroscopic Imager ( RHESSI ) hard X-ray sources, whereas no enhanced X-ray emission is detected at the secondary ribbon sites. The (E)UV emission, associated with the secondary ribbons, peaks ∼1 minute after the last RHESSI hard X-ray enhancement. A nonlinear force-free model of the coronal magnetic field reveals that the secondary flare ribbons are not directly connected to the primary ribbons, but to regions nearby. Detailed analysis suggests that the secondary brightenings are produced due to dissipation of kinetic energy of the plasma flows (heating due to compression), and not due to non-thermal particles accelerated by magnetic reconnection, as is the case for the primary ribbons.

Flare Ribbons Approach Observed by the Interface Region Imaging Spectrograph and the Solar Dynamics Observatory

Energy Technology Data Exchange (ETDEWEB)

Li, Ting; Zhang, Jun; Hou, Yijun, E-mail: liting@nao.cas.cn [Key Laboratory of Solar Activity, National Astronomical Observatories, Chinese Academy of Sciences, Beijing 100012 (China)

2017-10-10

We report flare ribbons approach (FRA) during a multiple-ribbon M-class flare on 2015 November 4 in NOAA AR 12443, obtained by the Interface Region Imaging Spectrograph and the Solar Dynamics Observatory. The flare consisted of a pair of main ribbons and two pairs of secondary ribbons. The two pairs of secondary ribbons were formed later than the appearance of the main ribbons, with respective time delays of 15 and 19 minutes. The negative-polarity main ribbon spread outward faster than the first secondary ribbon with the same polarity in front of it, and thus the FRA was generated. Just before their encounter, the main ribbon was darkening drastically and its intensity decreased by about 70% in 2 minutes, implying the suppression of main-phase reconnection that produced two main ribbons. The FRA caused the deflection of the main ribbon to the direction of secondary ribbon with a deflection angle of about 60°. A post-approach arcade was formed about 2 minutes later and the downflows were detected along the new arcade with velocities of 35–40 km s{sup −1}, indicative of the magnetic restructuring during the process of FRA. We suggest that there are three topological domains with footpoints outlined by the three pairs of ribbons. Close proximity of these domains leads to deflection of the ribbons, which is in agreement with the magnetic field topology.

A continuous Czochralski silicon crystal growth system

Science.gov (United States)

Wang, C.; Zhang, H.; Wang, T. H.; Ciszek, T. F.

2003-03-01

Demand for large silicon wafers has driven the growth of silicon crystals from 200 to 300 mm in diameter. With the increasing silicon ingot sizes, melt volume has grown dramatically. Melt flow becomes more turbulent as melt height and volume increase. To suppress turbulent flow in a large silicon melt, a new Czochralski (CZ) growth furnace has been designed that has a shallow melt. In this new design, a crucible consists of a shallow growth compartment in the center and a deep feeding compartment around the periphery. Two compartments are connected with a narrow annular channel. A long crystal may be continuously grown by feeding silicon pellets into the dedicated feeding compartment. We use our numerical model to simulate temperature distribution and velocity field in a conventional 200-mm CZ crystal growth system and also in the new shallow crucible CZ system. By comparison, advantages and disadvantages of the proposed system are observed, operating conditions are determined, and the new system is improved.

Inter-ribbon tunneling in graphene: An atomistic Bardeen approach

Energy Technology Data Exchange (ETDEWEB)

Van de Put, Maarten L., E-mail: maarten.vandeput@uantwerpen.be; Magnus, Wim [Department of Physics, Universiteit Antwerpen, B-2020 Antwerpen (Belgium); imec, B-3001 Heverlee (Belgium); Vandenberghe, William G.; Fischetti, Massimo V. [Department of Material Science, University of Texas at Dallas, Texas 75080 (United States); Sorée, Bart [Department of Physics, Universiteit Antwerpen, B-2020 Antwerpen (Belgium); imec, B-3001 Heverlee (Belgium); Department of Electrical Engineering, KU Leuven, B-3001 Leuven (Belgium)

2016-06-07

A weakly coupled system of two crossed graphene nanoribbons exhibits direct tunneling due to the overlap of the wavefunctions of both ribbons. We apply the Bardeen transfer Hamiltonian formalism, using atomistic band structure calculations to account for the effect of the atomic structure on the tunneling process. The strong quantum-size confinement of the nanoribbons is mirrored by the one-dimensional character of the electronic structure, resulting in properties that differ significantly from the case of inter-layer tunneling, where tunneling occurs between bulk two-dimensional graphene sheets. The current-voltage characteristics of the inter-ribbon tunneling structures exhibit resonance, as well as stepwise increases in current. Both features are caused by the energetic alignment of one-dimensional peaks in the density-of-states of the ribbons. Resonant tunneling occurs if the sign of the curvature of the coupled energy bands is equal, whereas a step-like increase in the current occurs if the signs are opposite. Changing the doping modulates the onset-voltage of the effects as well as their magnitude. Doping through electrostatic gating makes these structures promising for application towards steep slope switching devices. Using the atomistic empirical pseudopotentials based Bardeen transfer Hamiltonian method, inter-ribbon tunneling can be studied for the whole range of two-dimensional materials, such as transition metal dichalcogenides. The effects of resonance and of step-like increases in the current we observe in graphene ribbons are also expected in ribbons made from these alternative two-dimensional materials, because these effects are manifestations of the one-dimensional character of the density-of-states.

Photoluminescence studies of cubic phase GaN grown by molecular beam epitaxy on (001) silicon covered with SiC layer

International Nuclear Information System (INIS)

Godlewski, M.; Ivanov, V.Yu.; Bergman, J.P.; Monemar, B.; Barski, A.; Langer, R.

1997-01-01

In this work we evaluate optical properties of cubic phase GaN epilayers grown on top of (001) silicon substrate prepared by new process. Prior to the growth Si substrate was annealed at 1300-1400 o C in propane. The so-prepared substrate is covered within a thin (∼ 4 nm) SiC wafer, which allowed a successful growth of good morphological quality cubic phase GaN epilayers. The present results confirm recent suggestion on smaller ionization energies of acceptors in cubic phase GaN epilayers. (author)

After the Ribbon Cutting

DEFF Research Database (Denmark)

Hodge, Graeme A.; Boulot, Emille; Duffield, Colin

2017-01-01

Much attention has gone towards ‘up-front’ processes when delivering infrastructure public–private partnerships (PPPs), but less on how to best govern after the ribbon is cut and the infrastructure built. This paper identifies the primary contractual and institutional governance challenges arising...

Large area silicon sheet by EFG. Fourth quarterly report, October 1-December 31, 1978

Energy Technology Data Exchange (ETDEWEB)

Wald, F.V.

1979-03-01

Crystal growth station no. 1 further explored displaced die concepts, along with some initial work on buckle characterization. Also, convective impurity redistribution was further studied. In particular, a side channel die was used to grow material doped with aluminum and compare the results at least semiquantitatively with computer calculations. The ribbons grown have not been characterized yet. In station no. 3A growth from single cartridges was continued to create a quality baseline to allow comparison of the results with those in the upcoming multiple run and to choose the most appropriate die design. Also fabrication and assembly work on the actual five ribbon furnace continued. On furnace 17 progress was made toward the development of the video optical system for edge position and meniscus height control. Also, in preparation for a detailed program, designed to explore the buckling problem, ribbon width ribon was then grown under stable conditions without a cold shoe, an achievement essential to finally arrive at quantitative correlations between growth conditions and buckle formation. The most significant result from the characterization program was a demonstration that the original runs with displaced dies were indeed reproducible, inasmuch as large area cells (7.5 x 7.5 cm/sup 2/) of approx. 9% efficiency could be fabricated again from run 18-103, a repeat of run no. 18-102 which had previously produced the best cells.

Position of the IBEX ribbon as a key to understand its origin

Science.gov (United States)

Swaczyna, Pawel; Bzowski, Maciej; Sokół, Justyna M.; Christian, Eric R.; Funsten, Herbert O.; McComas, David J.; Schwadron, Nathan A.

2017-04-01

Observations of the energetic neutral atom (ENA) emission by the Interstellar Boundary Explorer (IBEX) allow for remote sensing of the plasma properties in heliosheath. The first IBEX results revealed an unexpected arc-like enhancement of the ENA flux in the sky, dubbed the IBEX ribbon. This discovery led to formulation of more than a dozen hypotheses on its origin. The emission source region proposed in these hypotheses span the heliospheric termination shock up to a hypothetical nearby interface between the Local Interstellar Cloud and a local bay in the Local Bubble. Among these hypotheses is the concept that the ribbon is produced by the secondary ENA mechanism, operating in the outer heliosheath. The observational strategy of IBEX allows observation of the same part of the sky from the opposite sides of the Sun every six months and thus provides parallax viewing with a baseline of 2 AU. After correcting the observations for the Compton-Getting effect and for gravitational deflection and radiation pressure, we use this parallax viewing to precisely determine the apparent position of the maximum flux associated with the ribbon. We find that the ribbon peak position differs semi-annually by an angle of 0.41±0.15 deg, which we interpret as the parallax effect. This angle corresponds to a distance of 140-38+84 AU, and thus suggests that most likely the ribbon's source is located just beyond the heliopause. Comparison of the IBEX ribbon position in five energy steps of IBEX-Hi shows a systematic shift, which changes the position of the ribbon center by ˜10 deg. We find that it can be explained using an analytic model of the secondary ENA mechanism with the neutralized supersonic solar wind as the source of the primary ENAs, which are ionized in the outer heliosheath, picked up by the ambient magnetic field, and eventually re-neutralized (as originally conceived, McComas et al. 2009). We use a realistic model of the solar wind evolution dependent on heliographic

Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

International Nuclear Information System (INIS)

Fedotov, A.K.; Mazanik, A.V.; Ul'yashin, A.G.; Dzhob, R; Farner, V.R.

2000-01-01

Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon as well as polycrystalline shaped silicon have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in silicon in the process of hydrogen plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type single crystal silicon. This effect can be used for n-p- and p-n-p-silicon based device structures producing [ru

Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.

Science.gov (United States)

Lee, Kwang Jae; Chun, Jaeyi; Kim, Sang-Jo; Oh, Semi; Ha, Chang-Soo; Park, Jung-Won; Lee, Seung-Jae; Song, Jae-Chul; Baek, Jong Hyeob; Park, Seong-Ju

2016-03-07

We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.

Strong white and blue photoluminescence from silicon nanocrystals in SiNx grown by remote PECVD using SiCl4/NH3

International Nuclear Information System (INIS)

Benami, A; Santana, G; Ortiz, A; Ponce, A; Romeu, D; Aguilar-Hernandez, J; Contreras-Puente, G; Alonso, J C

2007-01-01

Strong white and blue photoluminescence (PL) from as-grown silicon nanocrystals (nc-Si) in SiN x films prepared by remote plasma enhanced chemical vapour deposition using SiCl 4 /NH 3 mixtures is reported. The colour and intensity of the PL could be controlled by adjusting the NH 3 flow rate. Samples with white emission were annealed at 1000 deg. C, obtaining a strong improvement of the PL intensity with a blue colour. The PL can be attributed to quantum confinement effect in nc-Si embedded in SiN x matrix, which is improved when a better passivation of nc-Si surface with chlorine and nitrogen atoms is obtained. The size, density and structure of the nc-Si in the as-grown and annealed films were confirmed and measured by high-resolution transmission electron microscopy

Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

Science.gov (United States)

Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

2015-09-01

We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

Mena–GRASP65 interaction couples actin polymerization to Golgi ribbon linking

Science.gov (United States)

Tang, Danming; Zhang, Xiaoyan; Huang, Shijiao; Yuan, Hebao; Li, Jie; Wang, Yanzhuang

2016-01-01

In mammalian cells, the Golgi reassembly stacking protein 65 (GRASP65) has been implicated in both Golgi stacking and ribbon linking by forming trans-oligomers through the N-terminal GRASP domain. Because the GRASP domain is globular and relatively small, but the gaps between stacks are large and heterogeneous, it remains puzzling how GRASP65 physically links Golgi stacks into a ribbon. To explore the possibility that other proteins may help GRASP65 in ribbon linking, we used biochemical methods and identified the actin elongation factor Mena as a novel GRASP65-binding protein. Mena is recruited onto the Golgi membranes through interaction with GRASP65. Depleting Mena or disrupting actin polymerization resulted in Golgi fragmentation. In cells, Mena and actin were required for Golgi ribbon formation after nocodazole washout; in vitro, Mena and microfilaments enhanced GRASP65 oligomerization and Golgi membrane fusion. Thus Mena interacts with GRASP65 to promote local actin polymerization, which facilitates Golgi ribbon linking. PMID:26538023

Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide

International Nuclear Information System (INIS)

Poudel, P.R.; Poudel, P.P.; Paramo, J.A.; Strzhemechny, Y.M.; Rout, B.; McDaniel, F.D.

2015-01-01

The structural and optical properties of carbon nanoclusters formed in thermally grown silicon dioxide film via the ion beam synthesis process have been investigated. A low-energy (70 keV) carbon ion beam (C - ) at a fluence of 3 x 10 17 atoms/cm 2 was used for implantation into a thermally grown silicon dioxide layer (500 nm thick) on a Si (100) wafer. Several parts of the implanted samples were subsequently annealed in a gas mixture (4 % H 2 + 96 % Ar) at 900 C for different time periods. The as-implanted and annealed samples were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). The carbon ion implantation depth profile was simulated using a widely used Monte Carlo-based simulation code SRIM-2012. Additionally, the elemental depth profile of the implanted carbon along with host elements of silicon and oxygen were simulated using a dynamic ion-solid interaction code T-DYN, which incorporates the effects of the surface sputtering and gradual change in the elemental composition in the implanted layers due to high-fluence ion implantation. The elemental depth profile obtained from the XPS measurements matches closely to the T-DYN predictions. Raman measurements indicate the formation of graphitic phases in the annealed samples. The graphitic peak (G-peak) was found to be increased with the annealing time duration. In the sample annealed for 10 min, the sizes of the carbon nanoclusters were found to be 1-4 nm in diameter using TEM. The PL measurements at room temperature using a 325-nm laser show broad-band emissions in the ultraviolet to visible range in the as-implanted sample. Intense narrow bands along with the broad bands were observed in the annealed samples. The defects present in the as-grown samples along with carbon ion-induced defect centers in the as-implanted samples are the main contributors to the observed

Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide

Energy Technology Data Exchange (ETDEWEB)

Poudel, P.R. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States); Intel Corporation, Rio Rancho, NM (United States); Poudel, P.P. [University of Kentucky, Department of Chemistry, Lexington, KY (United States); Paramo, J.A.; Strzhemechny, Y.M. [Texas Christian University, Department of Physics and Astronomy, Fort Worth, TX (United States); Rout, B. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States); University of North Texas, Center for Advanced Research and Technology, Denton, TX (United States); McDaniel, F.D. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States)

2014-09-18

The structural and optical properties of carbon nanoclusters formed in thermally grown silicon dioxide film via the ion beam synthesis process have been investigated. A low-energy (70 keV) carbon ion beam (C{sup -}) at a fluence of 3 x 10{sup 17} atoms/cm{sup 2} was used for implantation into a thermally grown silicon dioxide layer (500 nm thick) on a Si (100) wafer. Several parts of the implanted samples were subsequently annealed in a gas mixture (4 % H{sub 2} + 96 % Ar) at 900 C for different time periods. The as-implanted and annealed samples were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). The carbon ion implantation depth profile was simulated using a widely used Monte Carlo-based simulation code SRIM-2012. Additionally, the elemental depth profile of the implanted carbon along with host elements of silicon and oxygen were simulated using a dynamic ion-solid interaction code T-DYN, which incorporates the effects of the surface sputtering and gradual change in the elemental composition in the implanted layers due to high-fluence ion implantation. The elemental depth profile obtained from the XPS measurements matches closely to the T-DYN predictions. Raman measurements indicate the formation of graphitic phases in the annealed samples. The graphitic peak (G-peak) was found to be increased with the annealing time duration. In the sample annealed for 10 min, the sizes of the carbon nanoclusters were found to be 1-4 nm in diameter using TEM. The PL measurements at room temperature using a 325-nm laser show broad-band emissions in the ultraviolet to visible range in the as-implanted sample. Intense narrow bands along with the broad bands were observed in the annealed samples. The defects present in the as-grown samples along with carbon ion-induced defect centers in the as-implanted samples are the main

Scintillating ribbon x-ray detector

International Nuclear Information System (INIS)

Kinchen, B.E.; Rogers, A.

1995-01-01

A patent in the early 1970's by Aerojet Corporation in Sacramento, CA put forth the idea of using an array of scintillating fibers for x-ray detection and imaging. In about 1975, Pratt and Whitney Aircraft in East Hartford, CT designed and manufactured an imaging system based on the patent. The device was 1.75 in thick in the direction of the x-ray beam and about 4 in. by 4 in. square. The device was used with a 8 MeV x-ray source to image and measure internal clearances within operating aircraft, gas turbines engines. There are significant advantages of fiber optic detectors in x-ray detection. However, the advantages are often outweighed by the disadvantages. Two of the advantages of scintillating fiber optic x-ray detectors are: (1) high limiting spatial frequency -- between 20 and 25 lp/mm; and (2) excellent x-ray stopping power -- they can be made thick and retain spatial resolution. In traditional fiber optic detectors the x-rays are oriented parallel to the long axis of the fiber. For the scintillating ribbon x-ray sensor, the x-rays are oriented normal to the fiber long axis. This ribbon sensor technique has a number of advantages over the two current radiographic techniques digital x-radiography and x-ray film: The main advantage the ribbon has is size and shape. It can be as thin as 0.05 in., virtually any width or length, and flexible. Once positioned in a given location, 20 to 100 square inches of the object being inspected can be imaged with a single x-ray beam sweep. It is clear that conventional digital cameras do not lend themselves to placement between walls of aircraft structures or similar items requiring x-ray inspections. A prototype scintillating ribbon x-ray sensor has been fabricated and tested by Synergistic Detector Designs. Images were acquired on corrosion test panels of aluminum fabricated by Iowa State University

Silicon nanowire-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

2008-07-23

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

Silicon nanowire-based solar cells

International Nuclear Information System (INIS)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

2008-01-01

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.

Science.gov (United States)

Tran, Thai-Truong D; Sun, Hao; Ng, Kar Wei; Ren, Fan; Li, Kun; Lu, Fanglu; Yablonovitch, Eli; Chang-Hasnain, Constance J

2014-06-11

The growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting ΔF inside InP microillars. Under 1 sun, we show that splitting can exceed ΔF ∼ 0.90 eV in undoped pillars. This value can be increased to values of ΔF ∼ 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of ΔF ∼ 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, ΔF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency.

Simulation of atomistic processes during silicon oxidation

OpenAIRE

Bongiorno, Angelo

2003-01-01

Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 interface is of significant importance in state-of-the-art silicon microelectronics manufacturing. These two topics are intimately coupled and are both addressed in this theoretical investigation mainly through first-principles calculations....

Electronic, magnetic and transport properties of graphene ribbons terminated by nanotubes

International Nuclear Information System (INIS)

Akhukov, M A; Yuan Shengjun; Fasolino, A; Katsnelson, M I

2012-01-01

We study, by density functional and large-scale tight-binding transport calculations, the electronic structure, magnetism and transport properties of the recently proposed graphene ribbons with edges rolled to form nanotubes. Edges with armchair nanotubes present magnetic moments localized either in the tube or the ribbon and of metallic or half-metallic character, depending on the symmetry of the junction. These properties have potential for spin valve and spin filter devices with advantages over other proposed systems. Edges with zigzag nanotubes are either metallic or semiconducting without affecting the intrinsic mobility of the ribbon. Varying the type and size of the nanotubes and ribbons offers the possibility to tailor the magnetic and transport properties, making these systems very promising for applications. (paper)

Process research on non-CZ silicon material

Science.gov (United States)

1982-01-01

High risk, high payoff research areas associated with he process for producing photovoltaic modules using non-CZ sheet material are investigated. All investigations are being performed using dendritic web silicon, but all processes are directly applicable to other ribbon forms of sheet material. The technical feasibility of forming front and back junctions in non-CZ silicon using liquid dopant techniques was determined. Numerous commercially available liquid phosphorus and boron dopant solutions are investigated. Temperature-time profiles to achieve N(+) and P(+) sheet resistivities of 60 + or - 10 and 40 + or - s10 ohms per square centimeter respectively are established. A study of the optimal method of liquid dopant application is performed. The technical feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask was also determined.

A MAGNETIC RIBBON MODEL FOR STAR-FORMING FILAMENTS

Energy Technology Data Exchange (ETDEWEB)

Auddy, Sayantan; Basu, Shantanu [Department of Physics and Astronomy, The University of Western Ontario, London, ON N6A 3K7 (Canada); Kudoh, Takahiro, E-mail: sauddy3@uwo.ca, E-mail: basu@uwo.ca, E-mail: kudoh@nagasaki-u.ac.jp [Faculty of Education, Nagasaki University, 1-14 Bunkyo-machi, Nagasaki 852-8521 (Japan)

2016-11-01

We develop a magnetic ribbon model for molecular cloud filaments. These result from turbulent compression in a molecular cloud in which the background magnetic field sets a preferred direction. We argue that this is a natural model for filaments and is based on the interplay between turbulence, strong magnetic fields, and gravitationally driven ambipolar diffusion, rather than pure gravity and thermal pressure. An analytic model for the formation of magnetic ribbons that is based on numerical simulations is used to derive a lateral width of a magnetic ribbon. This differs from the thickness along the magnetic field direction, which is essentially the Jeans scale. We use our model to calculate a synthetic observed relation between apparent width in projection versus observed column density. The relationship is relatively flat, similar to observations, and unlike the simple expectation based on a Jeans length argument.

Development of a magnetic measurement device for thin ribbon samples

International Nuclear Information System (INIS)

Sato, Yuta; Todaka, Takashi; Enokizono, Masato

2008-01-01

This paper presents a magnetic measurement device for thin ribbon samples, which are produced by rapid cooling technique. This device enables us to measure magnetic properties easily by only inserting a ribbon sample into a sample holder. The sample holder was made by bakelite to fix any width sample. A long solenoid coil was used to generate a uniform magnetic field and the sample holder was placed at the mid part of the solenoid. The magnetic field strength was measured using a shunt resistor and the magnetic flux density and magnetization in sample ribbons were evaluated by using search coils. The accuracy of measurement was verified with an amorphous metal ribbon sample. Next, we have measured magnetic properties of some magnetic shape memory alloys, which have different compositions. The measured results are compared and we clarified the effect of Sm contents on the magnetic properties

Magnetostrictive properties of FeAl/polyester and FeAl/silicone composites

Energy Technology Data Exchange (ETDEWEB)

Riesgo, G. [Dpto. de Ciencias y Técnicas de la Navegación, Universidad de Oviedo, Campus universitario de Gijón, 33203 Gijón (Spain); Carrizo, J. [Dpto. de Física de la Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain); Elbaile, L., E-mail: elbaile@uniovi.es [Dpto. de Física de la Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain); Crespo, R.D. [Dpto. de Física de la Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain); Sepúlveda, R. [Dpto. de Ingeniería Mecánica y de los Materiales, Universidad de Sevilla, Isla Cartuja, 41092 Sevilla (Spain); García, J.A. [Dpto. de Física de la Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain)

2017-01-15

Highlights: • Nanocrystalline powders of FeAl have been obtained from the Fe{sub 81}Al{sub 19} ribbon produced by melt spinning. • The method allows the obtainment of a FeAl solid solution from the starting process. • The microstructure and magnetic properties of the powders were investigated. • Composites with a magnetostriction of 45 ppm have been obtained. - Abstract: Ribbons of composition Fe{sub 81}Al{sub 19} obtained by the melt spinning method have been used to yield powder by mechanical milling. Using this method, a rapid nanocrystallization and a FeAl solid solution phase was obtained from the start of the process. The microstructural and magnetic properties as well as the XRD patterns of the powders were studied in function of the milling time. Grain refinement and an increase of the coercive field were the main transformations resulting from increasing the milling time. Two sets of magnetostrictive composites were produced from the 100 h-milled powder. In one of them polyester was used as matrix and in the other one silicone. In the case of the silicone composites cured in a magnetic field of 140 mT in the longitudinal direction a saturation magnetostriction as high as 45 ppm was obtained.

Solution-grown silicon nanowires for lithium-ion battery anodes.

Science.gov (United States)

Chan, Candace K; Patel, Reken N; O'Connell, Michael J; Korgel, Brian A; Cui, Yi

2010-03-23

Composite electrodes composed of silicon nanowires synthesized using the supercritical fluid-liquid-solid (SFLS) method mixed with amorphous carbon or carbon nanotubes were evaluated as Li-ion battery anodes. Carbon coating of the silicon nanowires using the pyrolysis of sugar was found to be crucial for making good electronic contact to the material. Using multiwalled carbon nanotubes as the conducting additive was found to be more effective for obtaining good cycling behavior than using amorphous carbon. Reversible capacities of 1500 mAh/g were observed for 30 cycles.

Solution-Grown Silicon Nanowires for Lithium-Ion Battery Anodes

KAUST Repository

Chan, Candace K.

2010-03-23

Composite electrodes composed of silicon nanowires synthesized using the supercritical fluid-liquid-solid (SFLS) method mixed with amorphous carbon or carbon nanotubes were evaluated as Li-ion battery anodes. Carbon coating of the silicon nanowires using the pyrolysis of sugar was found to be crucial for making good electronic contact to the material. Using multiwalled carbon nanotubes as the conducting additive was found to be more effective for obtaining good cycling behavior than using amorphous carbon. Reversible capacities of 1500 mAh/g were observed for 30 cycles. © 2010 American Chemical Society.

FLARE RIBBON ENERGETICS IN THE EARLY PHASE OF AN SDO FLARE

Energy Technology Data Exchange (ETDEWEB)

Fletcher, L.; Hannah, I. G.; Hudson, H. S. [School of Physics and Astronomy, SUPA, University of Glasgow, Glasgow, G12 8QQ (United Kingdom); Innes, D. E. [Max Planck Institute for Solar System Research, Max-Planck-Strasse 2, D-37191 Katlenburg-Lindau (Germany)

2013-07-10

The sites of chromospheric excitation during solar flares are marked by extended extreme ultraviolet ribbons and hard X-ray (HXR) footpoints. The standard interpretation is that these are the result of heating and bremsstrahlung emission from non-thermal electrons precipitating from the corona. We examine this picture using multi-wavelength observations of the early phase of an M-class flare SOL2010-08-07T18:24. We aim to determine the properties of the heated plasma in the flare ribbons, and to understand the partition of the power input into radiative and conductive losses. Using GOES, SDO/EVE, SDO/AIA, and RHESSI, we measure the temperature, emission measure (EM), and differential emission measure of the flare ribbons, and deduce approximate density values. The non-thermal EM, and the collisional thick target energy input to the ribbons are obtained from RHESSI using standard methods. We deduce the existence of a substantial amount of plasma at 10 MK in the flare ribbons, during the pre-impulsive and early-impulsive phase of the flare. The average column EM of this hot component is a few times 10{sup 28} cm{sup -5}, and we can calculate that its predicted conductive losses dominate its measured radiative losses. If the power input to the hot ribbon plasma is due to collisional energy deposition by an electron beam from the corona then a low-energy cutoff of {approx}5 keV is necessary to balance the conductive losses, implying a very large electron energy content. Independent of the standard collisional thick-target electron beam interpretation, the observed non-thermal X-rays can be provided if one electron in 10{sup 3}-10{sup 4} in the 10 MK (1 keV) ribbon plasma has an energy above 10 keV. We speculate that this could arise if a non-thermal tail is generated in the ribbon plasma which is being heated by other means, for example, by waves or turbulence.

Experience with parallel optical link for the CDF silicon detector

International Nuclear Information System (INIS)

Hou, S.

2003-01-01

The Dense Optical Interface Module (DOIM) is a byte-wide optical link developed for the Run II upgrade of the CDF silicon tracking system [1]. The module consists of a transmitter with a laser-diode array for conversion of digitized detector signals to light outputs, a 22 m optical fiber ribbon cable for light transmission, and a receiver converting the light pulses back to electrical signals. We report on the design feature, characteristics, and radiation tolerance

Dosimetry of wires and single ribbons of Iridium 192

International Nuclear Information System (INIS)

Mazzucco, L.D.

1998-01-01

The objective of this work is in order to present in table formats the dosimetry of wires and single ribbons of Iridium with lengths 1-12 cm for each one linear source along the bisector which is perpendicular at tissue sources (water) computed for linear activity 1 mCi/cm in the case of wires, and 1 mCi/seed for ribbons. The above tables are of direct use, adaptable at particular cases so they facilitate logarithmic graphics of doses in function of the distance for interpolation and use in the treatments planning. It was shown that for two sources with identical linear activity and total length, one of the equidistant seeds at 1 cm (ribbon) and one wire on the other hand, the differences in dose rates in near positions can be about the 15% so corroborating that it is not possible to use wire tables for seeds neither vice versa. Moreover it was elaborated tables of practical direct use for dose rate in water at c Gy/hr for wires and Ribbons 1-12 cm length and from 0.5-10 cm of distance in the perpendicular bisector at the Iridium implant. (Author)

Electrical activation of phosphorus in silicon

International Nuclear Information System (INIS)

Goh, K.E.J.; Oberbeck, L.; Simmons, M.Y.; Clark, R.G.

2003-01-01

Full text: We present studies of phosphorus δ-doping in silicon with a view to determining the degree of electrical activation of the dopants. These results have a direct consequence for the use of phosphorus as a qubit in a silicon-based quantum computer such as that proposed by Kane. Room temperature and 4 K Hall effect measurements are presented for phosphorus δ-doped layers grown in n-type silicon using two different methods. In the first method, the δ-layer was deposited by a phosphorus effusion cell in an MBE chamber. In the second method, the Si surface was dosed with phosphine gas and then annealed to 550 deg C to incorporate P into the substrate. In both methods, the P δ-doped layer was subsequently encapsulated by ∼25 nm of Si grown epitaxially. We discuss the implications of our results on the fabrication of the Kane quantum computer

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

Science.gov (United States)

Wang, Chenlei

The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to

Nanocrystallization in amorphous Fe40Ni40(Si+B)19Mo1-2 ribbons

International Nuclear Information System (INIS)

Saiseng, S.; Winotai, P.; Nilpairuch, S.; Limsuwan, P.; Tang, I.M.

2004-01-01

Cut Fe 40 Ni 40 (Si+B) 19 Mo 1-2 ribbons were annealed for 2 h at various temperatures between 350 deg. C and 600 deg. C. XRD and Mossbauer effect spectroscopy (ME) measurements were then performed on all of the ribbons. The magnetic properties of several ribbons were measured using a vibrating sample magnetometer (VSM). A differential thermal analysis scan (over the range 20-800 deg. C) of the as-cast ribbon showed two phase transitions; the first at 454 deg. C and the second at 525 deg. C. Both the XRD and ME spectra of the as cast, the 350 deg. C and 400 deg. C annealed ribbons showed that they were amorphous. The ME spectra of the 450 deg. C, 475 deg. C and 500 deg. C annealed ribbons showed that these ribbons contained α-Fe, α-Fe(Si) and t-Fe 2 B nanocrystallites. For the ribbons annealed above 550 deg. C, crystallites of t-Fe 2 B, t-Fe 3 B, t-Fe 5 SiB 2 and FCC-FeNi appeared, with the α-Fe and α-Fe(Si) crystallites disappearing. The sextets of all of the Fe compounds appeared in the ME spectra of the 525 deg. C annealed ribbon. The VSM measurements supported the picture of a two-stage phase transitions; amorphous phase→a nanocrystalline phase (Fe-containing nanocrystallites in an amorphous matrix) at 454 deg. C and then a second transition, the nanocrystalline phase→a disordered alloy containing Fe-B and Fe-Ni crystallites at 525 deg. C

Metallurgical characterization of melt-spun ribbons of U-5.4 wt%Nb alloy

Science.gov (United States)

Ma, Rong; Ren, Zhiyong; Tang, Qingfu; Chen, Dong; Liu, Tingyi; Su, Bin; Wang, Zhenhong; Luo, Chao

2018-06-01

The microstructures and micro-mechanical properties of the melt-spun ribbons of U-5.4 wt%Nb alloy were characterized using optical microscopy, scanning electron microscopy, X-ray diffraction and nanoindentation. Observed variations in microstructures and properties are related to the changes in ribbon thicknesses and cooling rates. The microstructures of the melt-spun ribbon consist of fine-scale columnar grains (∼1 μm) adjacent to the chill surface and coarse cellular grains in the remainder of the ribbon. In addition, the formation of inclusions in the ribbon is suppressed kinetically due to the high cooling rate during melt spinning. Compared with the water-quenched specimen prepared by traditional gravity casting and solution heat treatment, the elastic modulus values of the U-5.4 wt%Nb alloy were examined to vary with grain size and exhibited diverse energy dissipation capacities.

Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering

Energy Technology Data Exchange (ETDEWEB)

Al-Amin, M., E-mail: m.al-amin@warwick.ac.uk; Murphy, J. D., E-mail: john.d.murphy@warwick.ac.uk [School of Engineering, University of Warwick, Coventry, CV4 7AL (United Kingdom)

2016-06-21

We report a systematic study into the effects of long low temperature (≤500 °C) annealing on the lifetime and interstitial iron distributions in as-grown multicrystalline silicon (mc-Si) from different ingot height positions. Samples are characterised in terms of dislocation density, and lifetime and interstitial iron concentration measurements are made at every stage using a temporary room temperature iodine-ethanol surface passivation scheme. Our measurement procedure allows these properties to be monitored during processing in a pseudo in situ way. Sufficient annealing at 300 °C and 400 °C increases lifetime in all cases studied, and annealing at 500 °C was only found to improve relatively poor wafers from the top and bottom of the block. We demonstrate that lifetime in poor as-grown wafers can be improved substantially by a low cost process in the absence of any bulk passivation which might result from a dielectric surface film. Substantial improvements are found in bottom wafers, for which annealing at 400 °C for 35 h increases lifetime from 5.5 μs to 38.7 μs. The lifetime of top wafers is improved from 12.1 μs to 23.8 μs under the same conditions. A correlation between interstitial iron concentration reduction and lifetime improvement is found in these cases. Surprisingly, although the interstitial iron concentration exceeds the expected solubility values, low temperature annealing seems to result in an initial increase in interstitial iron concentration, and any subsequent decay is a complex process driven not only by diffusion of interstitial iron.

A DLTS study of hydrogen doped czochralski-grown silicon

Energy Technology Data Exchange (ETDEWEB)

Jelinek, M. [Infineon Technologies Austria AG, 9500 Villach (Austria); Laven, J.G. [Infineon Technologies AG, 81726 Munich (Germany); Kirnstoetter, S. [Institute of Solid State Physics, Graz University of Technology, 8010 Graz (Austria); Schustereder, W. [Infineon Technologies Austria AG, 9500 Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, 81726 Munich (Germany); Rommel, M. [Fraunhofer Institute of Integrated Systems and Devices IISB, 91058 Erlangen (Germany); Frey, L. [Fraunhofer Institute of Integrated Systems and Devices IISB, 91058 Erlangen (Germany); Chair of Electron Devices, FAU Erlangen-Nuremberg, 91058 Erlangen (Germany)

2015-12-15

In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10–15 μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.

The ribbon microphone: A teaching aid for low frequency electromagnetic education

CSIR Research Space (South Africa)

Van Wyk, Marius S

2017-09-01

Full Text Available The ribbon microphone lends itself as a good example to use for education of multi-physics computer modeling and simulation. The value of the ribbon microphone as teaching aid can be extended by adding a transformer and electronic amplifier...

Domain walls dynamics in the amorphous ribbon with a helical magnetic anisotropy

International Nuclear Information System (INIS)

Zhmetko, D.N.; Savin, V.V.; Lemish, P.V.; Troschenkov, Y.N.

2006-01-01

The damping mechanism for motion of domain walls, which form the sandwich structure and move from the middle plane of the ribbon to opposite surfaces during the dynamic magnetization reversal, have been investigated. The difference between the real and ideal sandwich domain structure, the actual distribution of the anisotropy easy directions through the ribbon thickness and the M-bar s deviation from local easy directions under the action of applied magnetic field have been taken into account. It was revealed that the maximum of the total damping coefficient β tot (x) near the half-way of the domain wall run is due to the influence of the magnetic stray fields. These fields have a character of irregular oscillations and are directed approximately perpendicular to the local easy direction of the ribbon layer through which the domain wall propagates. The damping coefficient β e.c. (x) determined by eddy-currents has the maximal value close to the ribbon middle and decreases linearly to zero when the domain wall approaches the ribbon surface

Magnetoimpedance of cobalt-based amorphous ribbons/polymer composites

Energy Technology Data Exchange (ETDEWEB)

Semirov, A.V., E-mail: semirov@mail.ru [Irkutsk State University, Irkutsk (Russian Federation); Derevyanko, M.S.; Bukreev, D.A.; Moiseev, A.A.; Kudryavtsev, V.O. [Irkutsk State University, Irkutsk (Russian Federation); Safronov, A.P. [Ural Federal University, Yekaterinburg (Russian Federation)

2016-10-01

The combined influence of the temperature, the elastic tensile stress and the external magnetic field on the total impedance and impedance components were studied for rapidly quenched amorphous Co{sub 75}Fe{sub 5}Si{sub 4}B{sub 16} ribbons. Both as-cast amorphous ribbons and Co{sub 75}Fe{sub 5}Si{sub 4}B{sub 16}/polymer amorphous ribbon based composites were considered. Following polymer coverings were studied: modified rubber solution in o-xylene, solution of butyl methacrylate and methacrylic acid copolymer in isopropanol and solution of polymethylphenylsiloxane resin in toluene. All selected composites showed very good adhesion of the coverings and allowed to provide temperature measurements from 163 K up to 383 K under the applied deforming tensile force up to 30 N. The dependence of the modulus of the impedance and its components on the external magnetic field was influenced by the elastic tensile stresses and was affected by the temperature of the samples. It was shown that maximal sensitivity of the impedance and its components to the external magnetic field was observed at minimal temperature and maximal deforming force depended on the frequency of an alternating current. - Highlights: • Impedance and its components of amorphous Co{sub 75}Fe{sub 5}Si{sub 4}B{sub 16} ribbons were studied. • MI sensitivity to the magnetic field depends on a temperature and a deforming force. • Polymer covering can affect the functional properties of the composite.

Continuous, automated manufacturing of string ribbon Si PV modules. PVMaT Phase 5A2 Subcontract: First Annual Report, 21 May 1998--20 May 1999

Energy Technology Data Exchange (ETDEWEB)

Hanoka, J.I.

1999-11-03

This report describes the first year of a 3-year PVMaT Phase 5A2 program. Evergreen Solar will soon be expanding into a multi-megawatt facility and the PVMaT work will be used to further the objective of a high-throughput automated production line in every aspect of PV module making from producing silicon ribbon to making a finished module. The project has four task areas for this first year: crystal growth; cell manufacturing; modules; and factory layout and automation. The vast majority of the work this first year has been in the crystal growth and cell manufacturing areas. Evergreen Solar has its own unique technology in each of these areas. In crystal growth, a key goal of this PVMaT project has been developing and deploying an improved string material. The high-temperature string materials are used to stabilize the edges of the growing silicon ribbon in the String Ribbon silicon sheet growth. The result has been one of the major successes of this first year. Significant cost reductions and yield improvements have emerged from this improved string material. In addition, some of the groundwork for automation of the String Ribbon crystal growth process has been laid and shows much promise. A method for controlling the edge meniscus height was developed, and a patent has been filed based on this discovery. In the cell manufacturing area, the focus has been on reducing the number of processing steps and on design and construction of high-speed processing equipment. The possibility of eliminating all pre-diffusion etching and going directly from growth to diffusion has been demonstrated on an R and D scale. Unique designs for high-speed drying equipment and for a high-speed contact and AR-coating application machine have been developed. In the latter case, the basic concepts underlying various aspects of the machine design have been successfully tested for viability. The integration of the different components of this machine into a smoothly working whole is now

Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

Science.gov (United States)

Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

2014-04-01

Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

OBSERVATIONS OF AN X-SHAPED RIBBON FLARE IN THE SUN AND ITS THREE-DIMENSIONAL MAGNETIC RECONNECTION

Energy Technology Data Exchange (ETDEWEB)

Li, Y.; Ding, M. D.; Yang, K. [School of Astronomy and Space Science, Nanjing University, Nanjing 210093 (China); Qiu, J.; Longcope, D. W., E-mail: yingli@nju.edu.cn [Department of Physics, Montana State University, Bozeman, MT 59717 (United States)

2016-05-20

We report evolution of an atypical X-shaped flare ribbon that provides novel observational evidence of three-dimensional (3D) magnetic reconnection at a separator. The flare occurred on 2014 November 9. High-resolution slit-jaw 1330 Å images from the Interface Region Imaging Spectrograph reveal four chromospheric flare ribbons that converge and form an X-shape. Flare brightening in the upper chromosphere spreads along the ribbons toward the center of the “X” (the X-point), and then spreads outward in a direction more perpendicular to the ribbons. These four ribbons are located in a quadrupolar magnetic field. Reconstruction of magnetic topology in the active region suggests the presence of a separator connecting to the X-point outlined by the ribbons. The inward motion of flare ribbons in the early stage therefore indicates 3D magnetic reconnection between two sets of non-coplanar loops that approach laterally, and reconnection proceeds downward along a section of vertical current sheet. Coronal loops are also observed by the Atmospheric Imaging Assembly on board the Solar Dynamics Observatory confirming the reconnection morphology illustrated by ribbon evolution.

Mena-GRASP65 interaction couples actin polymerization to Golgi ribbon linking.

Science.gov (United States)

Tang, Danming; Zhang, Xiaoyan; Huang, Shijiao; Yuan, Hebao; Li, Jie; Wang, Yanzhuang

2016-01-01

In mammalian cells, the Golgi reassembly stacking protein 65 (GRASP65) has been implicated in both Golgi stacking and ribbon linking by forming trans-oligomers through the N-terminal GRASP domain. Because the GRASP domain is globular and relatively small, but the gaps between stacks are large and heterogeneous, it remains puzzling how GRASP65 physically links Golgi stacks into a ribbon. To explore the possibility that other proteins may help GRASP65 in ribbon linking, we used biochemical methods and identified the actin elongation factor Mena as a novel GRASP65-binding protein. Mena is recruited onto the Golgi membranes through interaction with GRASP65. Depleting Mena or disrupting actin polymerization resulted in Golgi fragmentation. In cells, Mena and actin were required for Golgi ribbon formation after nocodazole washout; in vitro, Mena and microfilaments enhanced GRASP65 oligomerization and Golgi membrane fusion. Thus Mena interacts with GRASP65 to promote local actin polymerization, which facilitates Golgi ribbon linking. © 2016 Tang et al. This article is distributed by The American Society for Cell Biology under license from the author(s). Two months after publication it is available to the public under an Attribution–Noncommercial–Share Alike 3.0 Unported Creative Commons License (http://creativecommons.org/licenses/by-nc-sa/3.0).

Position-controlled epitaxial III-V nanowires on silicon

NARCIS (Netherlands)

Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

Dynamics of sandwich domain structure in Co-based amorphous ribbons with helical magnetic anisotropy: Part I

International Nuclear Information System (INIS)

Zhmetko, D.N.; Zhmetko, S.D.

2009-01-01

The distribution of axes of easy magnetization close to a homogeneous distribution is revealed in each half-thickness of a ribbon after annealing it in a helical magnetic field. The transition from magnetic reversal of a ribbon by the displacement of two domain walls formed near a middle plane of a ribbon to magnetic reversal of a ribbon by displacement of two domain walls formed near to the main surfaces of a ribbon is found out during each half-period of a magnetic reversal.

Temperature distribution study in flash-annealed amorphous ribbons

International Nuclear Information System (INIS)

Moron, C.; Garcia, A.; Carracedo, M.T.

2003-01-01

Negative magnetrostrictive amorphous ribbons have been locally current annealed with currents from 1 to 8 A and annealing times from 14 ms to 200 s. In order to obtain information about the sample temperature during flash or current annealing, a study of the temperature dispersion during annealing in amorphous ribbons was made. The local temperature variation was obtained by measuring the local intensity of the infrared emission of the sample with a CCD liquid nitrogen cooled camera. A distribution of local temperature has been found in spite of the small dimension of the sample

Comparative Study of Furnace and Flash Lamp Annealed Silicon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Maheshwar Shrestha

2018-03-01

Full Text Available Low-temperature growth of microcrystalline silicon (mc-Si is attractive for many optoelectronic device applications. This paper reports a detailed comparison of optical properties, microstructure, and morphology of amorphous silicon (a-Si thin films crystallized by furnace annealing and flash lamp annealing (FLA at temperatures below the softening point of glass substrate. The initial a-Si films were grown by plasma enhanced chemical vapor deposition (PECVD. Reflectance measurement indicated characteristic peak in the UV region ~280 nm for the furnace annealed (>550 °C and flash lamp annealed films, which provided evidence of crystallization. The film surface roughness increased with increasing the annealing temperature as well as after the flash lamp annealing. X-ray diffraction (XRD measurement indicated that the as-deposited samples were purely amorphous and after furnace crystallization, the crystallites tended to align in one single direction (202 with uniform size that increased with the annealing temperature. On the other hand, the flash lamp crystalized films had randomly oriented crystallites with different sizes. Raman spectroscopy showed the crystalline volume fraction of 23.5%, 47.3%, and 61.3% for the samples annealed at 550 °C, 650 °C, and with flash lamp, respectively. The flash lamp annealed film was better crystallized with rougher surface compared to furnace annealed ones.

Large-area, laterally-grown epitaxial semiconductor layers

Science.gov (United States)

Han, Jung; Song, Jie; Chen, Danti

2017-07-18

Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

Quality evaluation of resistivity-controlled silicon crystals

Science.gov (United States)

Wang, Jong Hoe

2006-01-01

The segregation phenomenon of dopants causes a low production yield of silicon crystal that meets the resistivity tolerance required by device manufacturers. In order to control the macroscopic axial resistivity distribution in bulk crystal growth, numerous studies including continuous Czochralski method and double crucible technique have been studied. The simple B-P codoping method for improving the productivity of p-type silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. In this work, the quality of Czochralski-grown silicon single crystals with a diameter 200 mm using B-P codoping method was studied from the chemical and structural points of view. It was found that the characteristics of B-P codoped wafers including the oxygen precipitation behavior and the grown-in defects are same as that of conventional B-doped Czochralski crystals.

A micromagnetic study of the oscillations of pinned domain walls in magnetic ribbons

Energy Technology Data Exchange (ETDEWEB)

Alejos, Oscar [Dpto. Electricidad y Electronica, Universidad de Valladolid, 47071 Valladolid (Spain)]. E-mail: oscaral@ee.uva.es; Torres, Carlos [Dpto. Electricidad y Electronica, Universidad de Valladolid, 47071 Valladolid (Spain); Hernandez-Gomez, Pablo [Dpto. Electricidad y Electronica, Universidad de Valladolid, 47071 Valladolid (Spain); Lopez-Diaz, Luis [Dpto. Fisica Aplicada, Universidad de Salamanca, 37071 Salamanca (Spain); Torres, Luis [Dpto. Fisica Aplicada, Universidad de Salamanca, 37071 Salamanca (Spain); Martinez, Eduardo [Dpto. Ingenieria Electromecanica, Universidad de Burgos, 09001 Burgos (Spain)

2007-09-15

The work studies the dynamics of domain walls in magnetic ribbons with thicknesses of the order of magnitude of the permalloy exchange length (5.7 nm) by means of micromagnetic simulations. Two small defects are symmetrically placed on both edges of the ribbon, one on each edge, occupying the whole ribbon thickness. One transverse domain wall is pinned by the defects, in a head-to-head configuration. A free wall oscillation is forced by applying a static external magnetic field in the direction of the large axis until the wall reaches a new equilibrium position (elongation), and then removed. Three dynamic regimes are observed depending on the size of the cross ribbon section.

A micromagnetic study of the oscillations of pinned domain walls in magnetic ribbons

International Nuclear Information System (INIS)

Alejos, Oscar; Torres, Carlos; Hernandez-Gomez, Pablo; Lopez-Diaz, Luis; Torres, Luis; Martinez, Eduardo

2007-01-01

The work studies the dynamics of domain walls in magnetic ribbons with thicknesses of the order of magnitude of the permalloy exchange length (5.7 nm) by means of micromagnetic simulations. Two small defects are symmetrically placed on both edges of the ribbon, one on each edge, occupying the whole ribbon thickness. One transverse domain wall is pinned by the defects, in a head-to-head configuration. A free wall oscillation is forced by applying a static external magnetic field in the direction of the large axis until the wall reaches a new equilibrium position (elongation), and then removed. Three dynamic regimes are observed depending on the size of the cross ribbon section

Application Potential of Nanocrystalline Ribbons Still Pending

Science.gov (United States)

Butvin, Pavol; Butvinová, Beata; Švec, Peter; Sitek, Jozef

2010-09-01

Nanocrystalline soft-magnetic ribbons promised a wide-spread practical use when introduced at the beginning of nineties. After 20 years of extensive research there are still unclear material problems which are thought to be the principal reason why these materials show but marginal use. Poorly controllable magnetic anisotropy due to spontaneous intrinsic macroscopic stress that comes from an inevitable heterogeneity of the ribbon materials is pointed to in this work. Certain stress-based mechanisms are shown to induce the unintended anisotropy in the already familiar Finemets as well as in the newer Hitperms. Hysteresis loops, domain structure and power loss is used to reveal the anisotropy consequences and particular connected but still unanswered questions are pinpointed.

Magnetic properties of nanocrystallized Fe-Pt-B melt-spun ribbons

International Nuclear Information System (INIS)

Yamamoto, Tokujiro; Omori, Akihiro; Kimura, Hisamichi; Inoue, Akihisa

2007-01-01

L1 0 FePt nanoparticles have been prepared by etching grain boundaries of heat-treated melt-spun Fe-19Pt-25B (at.%) alloy ribbons. It is revealed that an L1 0 FePt nanocrystalline phase is directly formed from the Fe-Pt-B amorphous ribbons by long-time heat treatment at low temperatures in the vicinity of 723 K. With increasing heat treatment time, dimensions of the nanocrystallized FePt grains increase, accompanied by a change from soft ferromagnetic to hard ferromagnetic. The ribbon crystallized at 723 K for 1.8 ks consists of only an FePt L1 0 phase and its coercivity is as low as 0.381 kA/m. However, it increases to 372 kA/m with increasing grain size of precipitated L1 0 phase to about 30 nm by heat treatment for 86.4 ks, while the saturation magnetic flux density remains constant at about 0.4 T. Etching boundaries in heat-treated ribbons has been performed to obtain ferromagnetic L1 0 FePt nanoparticles and several particles were observed by means of transmission electron microscopy

Mechanical properties of metallic ribbons investigated by depth sensing indentation technique

International Nuclear Information System (INIS)

Pesek, Ladislav; Dobrzanski, Leszek A.; Zubko, Pavol; Konieczny, Jaroslaw

2006-01-01

The paper presents mechanical properties of two kinds of Co-based and one Fe-based metallic ribbons by the depth sensing indentation (DSI) technique. Investigations were carried out on two kinds ternary alloy Co 77 Si 11,5 B 11,5 and Fe 78 Si 13 B 9 and multicomponent Co 68 Fe 4 Mo 1 Si 13,5 B 13,5 , which are so-called 'zero-magnetostriction' materials. Metallic ribbons were investigated in amorphous state and partially crystallized state after annealing in 400deg. C in argon atmosphere. Heating of ribbons obtained by melt spinning technique was performed to check its effect on changes of mechanical properties

Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

Science.gov (United States)

Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

2015-09-02

In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells

International Nuclear Information System (INIS)

Fay, Sylvie; Steinhauser, Jerome; Nicolay, Sylvain; Ballif, Christophe

2010-01-01

Conductive zinc oxide (ZnO) grown by low pressure chemical vapor deposition (LPCVD) technique possesses a rough surface that induces an efficient light scattering in thin film silicon (TF Si) solar cells, which makes this TCO an ideal candidate for contacting such devices. IMT-EPFL has developed an in-house LPCVD process for the deposition of nanotextured boron doped ZnO films used as rough TCO for TF Si solar cells. This paper is a general review and synthesis of the study of the electrical, optical and structural properties of the ZnO:B that has been performed at IMT-EPFL. The influence of the free carrier absorption and the grain size on the electrical and optical properties of LPCVD ZnO:B is discussed. Transport mechanisms at grain boundaries are studied. It is seen that high doping of the ZnO grains facilitates the tunnelling of the electrons through potential barriers that are located at the grain boundaries. Therefore, even if these potential barriers increase after an exposition of the film to a humid atmosphere, the heavily doped LPCVD ZnO:B layers show a remarkable stable conductivity. However, the introduction of diborane in the CVD reaction induces also a degradation of the intra-grain mobility and increases over-proportionally the optical absorption of the ZnO:B films. Hence, the necessity to finely tune the doping level of LPCVD ZnO:B films is highlighted. Finally, the next challenges to push further the optimization of LPCVD ZnO:B films for thin film silicon solar cells are discussed, as well as some remarkable record cell results achieved with LPCVD ZnO:B as front electrode.

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

High resolution x-ray scattering studies of strain in epitaxial thin films of yttrium silicide grown on silicon (111)

International Nuclear Information System (INIS)

Marthinez-Miranda, L.J.; Santiago-Aviles, J.J.; Siegal, M.P.; Graham, W.R.; Heiney, P.A.

1990-01-01

The authors have used high resolution grazing incidence x-ray scattering (GIXS) to study the in- plane and out-of-plane structure of epitaxial YSi 2-x films grown on Si(111), with thicknesses ranging from 85 Angstrom to 510 Angstrom. Their results indicate that the films are strained, and that film strain increases as a function of thickness, with lattice parameters varying from a = 3.846 Angstrom/c = 4.142 Angstrom for the 85 Angstrom film to a = 3.877 Angstrom/c = 4.121 Angstrom for the 510 Angstrom film. The authors correlate these results with an increase in pinhole areal coverage as a function of thickness. In addition, the authors' measurements show no evidence for the existence of ordered silicon vacancies in the films

Piezoelectric ribbons printed onto rubber for flexible energy conversion.

Science.gov (United States)

Qi, Yi; Jafferis, Noah T; Lyons, Kenneth; Lee, Christine M; Ahmad, Habib; McAlpine, Michael C

2010-02-10

The development of a method for integrating highly efficient energy conversion materials onto stretchable, biocompatible rubbers could yield breakthroughs in implantable or wearable energy harvesting systems. Being electromechanically coupled, piezoelectric crystals represent a particularly interesting subset of smart materials that function as sensors/actuators, bioMEMS devices, and energy converters. Yet, the crystallization of these materials generally requires high temperatures for maximally efficient performance, rendering them incompatible with temperature-sensitive plastics and rubbers. Here, we overcome these limitations by presenting a scalable and parallel process for transferring crystalline piezoelectric nanothick ribbons of lead zirconate titanate from host substrates onto flexible rubbers over macroscopic areas. Fundamental characterization of the ribbons by piezo-force microscopy indicates that their electromechanical energy conversion metrics are among the highest reported on a flexible medium. The excellent performance of the piezo-ribbon assemblies coupled with stretchable, biocompatible rubber may enable a host of exciting avenues in fundamental research and novel applications.

Broadband magnetic losses of nanocrystalline ribbons and powder cores

Energy Technology Data Exchange (ETDEWEB)

Beatrice, Cinzia, E-mail: c.beatrice@inrim.it [Istituto Nazionale di Ricerca Metrologica, Nanoscience and Materials Division, Torino (Italy); Dobák, Samuel [Institute of Physics, Faculty of Science, P.J. Šafárik University, Košice (Slovakia); Ferrara, Enzo; Fiorillo, Fausto [Istituto Nazionale di Ricerca Metrologica, Nanoscience and Materials Division, Torino (Italy); Ragusa, Carlo [Politecnico di Torino, Energy Department, Torino (Italy); Füzer, Ján; Kollár, Peter [Institute of Physics, Faculty of Science, P.J. Šafárik University, Košice (Slovakia)

2016-12-15

Finemet type alloys have been investigated from DC to 1 GHz at different induction levels upon different treatments: as amorphous precursors, as ribbons nanocrystallized with and without an applied saturating field, as consolidated powders. The lowest energy losses at all frequencies and maximum Snoek's product are exhibited by the transversally field-annealed ribbons. This is understood in terms of rotation-dominated magnetization process in the low-anisotropy material. Intergrain eddy currents are responsible for the fast increase of the losses with frequency and for early permeability relaxation of the powder cores. Evidence for resonant phenomena at high frequencies and for the ensuing inadequate role of the static magnetic constitutive equation of the material in solving the magnetization dynamics via the Maxwell's diffusion equation of the electromagnetic field is provided. It is demonstrated that, by taking the Landau–Lifshitz–Gilbert equation as a constitutive relation, the excellent frequency response of the transverse anisotropy ribbons can be described by analytical method.

Silicon alleviates Cd stress of wheat seedlings (Triticum turgidum L. cv. Claudio) grown in hydroponics.

Science.gov (United States)

Rizwan, M; Meunier, J-D; Davidian, J-C; Pokrovsky, O S; Bovet, N; Keller, C

2016-01-01

We investigated the potential role of silicon in improving tolerance and decreasing cadmium (Cd) toxicity in durum wheat (Triticum turgidum L. durum) either through a reduced Cd uptake or exclusion/sequestration in non-metabolic tissues. For this, plants were grown in hydroponic conditions for 10 days either in presence or absence of 1 mM Si and for 11 additional days in various Cd concentrations (0, 0.5, 5.0 and 50 μM). After harvesting, morphological and physiological parameters as well as elemental concentrations were recorded. Cadmium caused reduction in growth parameters, photosynthetic pigments and mineral nutrient concentrations both in shoots and roots. Shoot and root contents of malate, citrate and aconitate increased, while contents of phosphate, nitrate and sulphate decreased with increasing Cd concentrations in plants. Addition of Si to the nutrient solution mitigated these adverse effects: Cd concentration in shoots decreased while concentration of Cd adsorbed at the root cell apoplasmic level increased together with Zn uptake by roots. Overall, total Cd uptake decreased in presence of Si. There was no co-localisation of Cd and Si either at the shoot or at the root levels. No Cd was detected in leaf phytoliths. In roots, Cd was mainly detected in the cortical parenchyma and Si at the endodermis level, while analysis of the outer thin root surface of the plants grown in the 50 μM Cd + 1 mM Si treatment highlighted non-homogeneous Cd and Si enrichments. These data strongly suggest the existence of a root localised protection mechanism consisting in armoring the root surface by Si- and Cd-bearing compounds and in limiting root-shoot translocation.

Continuous, Automated Manufacturing of String Ribbon Si PV Modules: Final Report, 21 May 1998 - 20 May 2001; FINAL

International Nuclear Information System (INIS)

Hanoka, J. I.

2001-01-01

This report summarizes the work done under a three-year PVMaT Phase 5A2 program. The overall goal was to attain a continuous, highly automated, fully integrated PV production line. In crystal growth, advances were made that resulted in lower substrate costs, higher yields, and lower capital and labor costs. A new string material was developed and implemented. Following this development, better control of the edge meniscus was achieved. A completely new furnace design was accomplished, and this became the standard platform in our new factory. Automation included ribbon thickness control and laser cutting of String Ribbon strips. Characterization of Evergreen's String Ribbon silicon was done with extensive help from the NREL laboratories, and this work provided a foundation for higher efficiency cells in the future. Advances in cell manufacturing included the development of high-speed printing and drying methods for Evergreen's unique cell making method and the design and building of a completely automated cell line from the beginning of front-contact application to the final tabbing of the cells. A so-called no-etch process whereby substrates from crystal growth go directly into p-n junction formation and emerge from this sequence without needing to go in and out of plastic carriers for any wet-chemical processing was developed. Process development as well as automation were brought to bear on improvements in soldering technology and cell interconnection in general. Using state-of-the-art manufacturing science, the Fraunhofer USA Center for Manufacturing Innovation at Boston University facilitated layout and process flow for the operation of our new factory. Evergreen Solar's new factory began operations in the second quarter of 2001. A good measure of the significant impact of this PVMaT subcontract is that virtually all of the manufacturing developments stemming from this project have been incorporated in this new factory

A CIRCULAR-RIBBON SOLAR FLARE FOLLOWING AN ASYMMETRIC FILAMENT ERUPTION

Energy Technology Data Exchange (ETDEWEB)

Liu, Chang; Deng, Na; Lee, Jeongwoo; Wang, Haimin [Space Weather Research Laboratory, New Jersey Institute of Technology, University Heights, Newark, NJ 07102-1982 (United States); Liu, Rui [CAS Key Laboratory of Geospace Environment, Department of Geophysics and Planetary Sciences, University of Science and Technology of China, Hefei 230026 (China); Pariat, Étienne [LESIA, Observatoire de Paris, PSL Research University, CNRS, Sorbonne Universits, UPMC Univ. Paris 06, Univ. Paris Diderot, Sorbonne Paris Cité, F-92190 Meudon (France); Wiegelmann, Thomas [Max-Planck-Institut für Sonnensystemforschung, Justus-von-Liebig Weg 3, D-37077 Göttingen (Germany); Liu, Yang [W. W. Hansen Experimental Physics Laboratory, Stanford University, Stanford, CA 94305-4085 (United States); Kleint, Lucia, E-mail: chang.liu@njit.edu [University of Applied Sciences and Arts Northwestern Switzerland, Bahnhofstrasse 6, 5210 Windisch (Switzerland)

2015-10-20

The dynamic properties of flare ribbons and the often associated filament eruptions can provide crucial information on the flaring coronal magnetic field. This Letter analyzes the GOES-class X1.0 flare on 2014 March 29 (SOL2014-03-29T17:48), in which we found an asymmetric eruption of a sigmoidal filament and an ensuing circular flare ribbon. Initially both EUV images and a preflare nonlinear force-free field model show that the filament is embedded in magnetic fields with a fan-spine-like structure. In the first phase, which is defined by a weak but still increasing X-ray emission, the western portion of the sigmoidal filament arches upward and then remains quasi-static for about five minutes. The western fan-like and the outer spine-like fields display an ascending motion, and several associated ribbons begin to brighten. Also found is a bright EUV flow that streams down along the eastern fan-like field. In the second phase that includes the main peak of hard X-ray (HXR) emission, the filament erupts, leaving behind two major HXR sources formed around its central dip portion and a circular ribbon brightened sequentially. The expanding western fan-like field interacts intensively with the outer spine-like field, as clearly seen in running difference EUV images. We discuss these observations in favor of a scenario where the asymmetric eruption of the sigmoidal filament is initiated due to an MHD instability and further facilitated by reconnection at a quasi-null in corona; the latter is in turn enhanced by the filament eruption and subsequently produces the circular flare ribbon.

Pseudo ribbon metal ion beam source

International Nuclear Information System (INIS)

Stepanov, Igor B.; Ryabchikov, Alexander I.; Sivin, Denis O.; Verigin, Dan A.

2014-01-01

The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface

Pseudo ribbon metal ion beam source.

Science.gov (United States)

Stepanov, Igor B; Ryabchikov, Alexander I; Sivin, Denis O; Verigin, Dan A

2014-02-01

The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface.

Effects of ion implantation on charges in the silicon--silicon dioxide system

International Nuclear Information System (INIS)

Learn, A.J.; Hess, D.W.

1977-01-01

Structures consisting of thermally grown oxide on silicon were implanted with boron, arsenic, or argon ions. For argon implantation through oxides, an increased fixed oxide charge (Q/sub ss/) was observed with the increase being greater for than for silicon. This effect is attributed to oxygen recoil which produces additional excess ionized silicon in the oxide of a type similar to that arising in thermal oxidation. Fast surface state (N/sub st/) generation was also noted which in most cases obscured the Q/sub ss/ increase. Of various heat treatments tested, only a 900 degreeC anneal in hydrogen annihilated N/sub st/ and allowed Q/sub ss/ measurement. Such N/sub st/ apparently arises as a consequence of implantation damage at the silicon--silicon dioxide interface. With the exception of boron implantations into thick oxides or through aluminum electrodes, reduction of the mobile ionic charge (Q/sub o/) was achieved by implantation. The reduction again is presumably damage related and is not negated by high-temperature annealing but may be counterbalanced by aluminum incorporation in the oxide

Amorphous metal matrix composite ribbons

International Nuclear Information System (INIS)

Barczy, P.; Szigeti, F.

1998-01-01

Composite ribbons with amorphous matrix and ceramic (SiC, WC, MoB) particles were produced by modified planar melt flow casting methods. Weldability, abrasive wear and wood sanding examinations were carried out in order to find optimal material and technology for elevated wear resistance and sanding durability. The correlation between structure and composite properties is discussed. (author)

Effects of surface crystallization and oxidation in nanocrystalline FeNbCuSiB(P) ribbons

Energy Technology Data Exchange (ETDEWEB)

Butvinová, B., E-mail: beata.butvinova@savba.sk [Institute of Physics SAS, Dúbravská cesta 9, 845 11 Bratislava (Slovakia); Butvin, P. [Institute of Physics SAS, Dúbravská cesta 9, 845 11 Bratislava (Slovakia); Brzózka, K. [Department of Physics, University of Technology and Humanities in Radom, Krasickiego 54, 26-600 Radom (Poland); Kuzminski, M. [Institute of Physics PAS, Al. Lotnikow 36/42, 02-668 Warsaw (Poland); Maťko, I.; Švec Sr, P. [Institute of Physics SAS, Dúbravská cesta 9, 845 11 Bratislava (Slovakia); Chromčíková, M. [Institute of Inorg. Chem. SAS, Centrum VILA, Študentská 2, 911 50 Trenčín (Slovakia)

2017-02-15

Si-poor Fe{sub 74}Nb{sub 3}Cu{sub 1}Si{sub 8}B{sub 14−x}P{sub x}, (x=0, 3) nanocrystalline ribbon-form alloys often form surfaces, which exert in-plane force on underlying ribbon interior when nanocrystallized in even modest presence of oxygen. Mostly unwanted hard-ribbon-axis magnetic anisotropy is standard result. Essential sources of the surface-caused stress have been sought and influence of P instead of B substitution on this effect was studied too. Preferred surface crystallization (PSC) was found to be the major reason. However P substitution suppresses PSC and promotes Fe-oxide formation, which eases the stress, softens the surfaces and provides different annealing evolution of surface properties. - Highlights: • Ar anneal of low-Si FeNbCuBSi ribbons produce surfaces that stress ribbon interior. • The stress comes mainly from preferred crystallization of surfaces. • Partial substitution of B by P changes annealing evolution of surface properties. • Without P, more crystalline surfaces significantly reduce ribbon's elasticity. • P suppresses surface crystallinity, promotes oxides and reduces mutual stress.

Hydrostatic extrusion of Cu-Ag melt spun ribbon

Science.gov (United States)

Hill, Mary Ann; Bingert, John F.; Bingert, Sherri A.; Thoma, Dan J.

1998-01-01

The present invention provides a method of producing high-strength and high-conductance copper and silver materials comprising the steps of combining a predetermined ratio of the copper with the silver to produce a composite material, and melt spinning the composite material to produce a ribbon of copper and silver. The ribbon of copper and silver is heated in a hydrogen atmosphere, and thereafter die pressed into a slug. The slug then is placed into a high-purity copper vessel and the vessel is sealed with an electron beam. The vessel and slug then are extruded into wire form using a cold hydrostatic extrusion process.

Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

International Nuclear Information System (INIS)

Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.

1997-12-01

Epitaxial grown thick layers (≥ 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 x 10 12 cm -3 ) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E p = 24 GeV) with a fluence of 1.5 x 10 11 cm -2 , no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ''sinking'' process, however, becomes non-effective at high radiation fluences (10 14 cm -2 ) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 x 10 14 cm -2 the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 x 10 12 cm -3 after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon

Martensitic transformation behavior and shape memory properties of Ti-Ni-Pt melt-spun ribbons

International Nuclear Information System (INIS)

Inamura, Tomonari; Takahashi, Yohei; Hosoda, Hideki; Wakashima, Kenji; Nagase, Takeshi; Nakano, Takayoshi; Umakoshi, Yukichi; Miyazaki, Shuichi

2006-01-01

Martensitic transformation behavior and shape memory properties of a Ti 50 Ni 40 Pt 10 (TiNiPt) melt-spun ribbon fabricated by a single roll melt-spinning technique were characterized. The constituent phases of the as-spun ribbon were B2 (parent phase) and B19 (martensite phase) at room temperature. The B2-B19 martensitic transformation temperatures of the as-spun ribbon were 100K higher than those of the bulk-material with the same chemical composition. The martensitic transformation temperatures of the as-spun ribbon were decreased with increasing the temperature of the heat-treatment made after the melt-spinning. The as-spun ribbon and the heat-treated ribbons exhibited shape recovery by heating and/or pseudoelasticity. The martensitic transformation temperatures determined from the temperature dependence of the 0.2% flow stress of the pseudoelastic deformation were in good agreement with those of B2-B19 martensitic transformation determined by DSC. It was confirmed that the observed shape recovery and pseudoelasticity are shape memory effect and superelasticity due to the B2-B19 martensitic transformation. Shape memory effect and superelasticity of melt-spun TiNiPt alloy were found to appear at higher temperatures compared to those of Bulk-material with the same composition. (author)

Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayers

International Nuclear Information System (INIS)

Akbari-Sharbaf, Arash; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Fanchini, Giovanni

2013-01-01

We investigate the role of disorder, stress and crystallite size in determining the density of defects in disordered and partially ordered silicon thin films deposited at low or moderate temperatures by molecular beam epitaxy. We find that the paramagnetic defect density measured by electron spin resonance (ESR) is strongly dependent on the growth temperature of the films, decreasing from ∼ 2 · 10 19 cm −3 at 98 °C to ∼ 1 · 10 18 cm −3 at 572 °C. The physical nature of the defects is strongly dependent on the range of order in the films: ESR spectra consistent with dangling bonds in an amorphous phase are observed at the lowest temperatures, while the ESR signal gradually becomes more anisotropic as medium-range order improves and the stress level (measured both by X-ray diffraction and Raman spectroscopy) is released in more crystalline films. Anisotropic ESR spectra consistent with paramagnetic defects embedded in an epitaxial phase are observed at the highest growth temperature (572 °C). - Highlights: ► Disordered Si epilayers were grown by molecular beam epitaxy. ► Growth has been carried out at temperatures T = 98 °C–514 °C. ► A correlation between defect density and disorder in the films has been found. ► Lack of medium range order and stress cause the formation of defects at low T. ► At high T, defects are associated to grain boundaries and oriented stacking faults

Migration of Sn and Pb from Solder Ribbon onto Ag Fingers in Field-Aged Silicon Photovoltaic Modules

Directory of Open Access Journals (Sweden)

Wonwook Oh

2015-01-01

Full Text Available We investigated the migration of Sn and Pb onto the Ag fingers of crystalline Si solar cells in photovoltaic modules aged in field for 6 years. Layers of Sn and Pb were found on the Ag fingers down to the edge of the solar cells. This phenomenon is not observed in a standard acceleration test condition for PV modules. In contrast to the acceleration test conditions, field aging subjects the PV modules to solar irradiation and moisture condensation at the interface between the solar cells and the encapsulant. The solder ribbon releases Sn and Pb via repeated galvanic corrosion and the Sn and Pb precipitate on Ag fingers due to the light-induced plating under solar irradiation.

Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

Energy Technology Data Exchange (ETDEWEB)

Chebil, W., E-mail: Chbil.widad@live.fr [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Université de Sousse (Tunisia); Fargi, A. [Laboratoire de Microélectronique et Instrumentation, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’environnement, 5019 Monastir (Tunisia); Azeza, B.; Zaaboub, Z. [Laboratoire Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l' environnement, 5019 Monastir (Tunisia); and others

2015-10-15

Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

Creating New VLS Silicon Nanowire Contact Geometries by Controlling Catalyst Migration

DEFF Research Database (Denmark)

Alam, Sardar Bilal; Panciera, Federico; Hansen, Ole

2015-01-01

The formation of self-assembled contacts between vapor-liquid-solid grown silicon nanowires and flat silicon surfaces was imaged in situ using electron microscopy. By measuring the structural evolution of the contact formation process, we demonstrate how different contact geometries are created b...

Characterization of nanostructured CuO-porous silicon matrixformed on copper coated silicon substrate via electrochemical etching

International Nuclear Information System (INIS)

Naddaf, M.; Mrad, O.; Al-Zier, A.

2015-01-01

A pulsed anodic etching method has been utilized for nanostructuring of a copper-coated p-type (100) silicon substrate, using HF-based solution as electrolyte. Scanning electron microscopy reveals the formation of a nanostructured matrix that consists of island-like textures with nanosize grains grown onto fiber-like columnar structures separated with etch pits of grooved porous structures. Spatial micro-Raman scattering analysis indicates that the island-like texture is composed of single-phase cupric oxide (CuO) nanocrystals, while the grooved porous structure is barely related to formation of porous silicon (PS). X-ray diffraction shows that both the grown CuO nanostructures and the etched silicon layer have the same preferred (220) orientation. Chemical composition obtained by means of X-ray photoelectron spectroscopic (XPS) analysis confirms the presence of the single-phase CuO on the surface of the patterned CuO-PS matrix. As compared to PS formed on the bare silicon substrate, the room-temperature photoluminescence (PL) from the CuO-PS matrix exhibits an additional weak (blue) PL band as well as a blue shift in the PL band of PS (S-band). This has been revealed from XPS analysis to be associated with the enhancement in the SiO2 content as well as formation of the carbonyl group on the surface in the case of the CuO-PS matrix.(author)

Evolutionary analysis of a novel zinc ribbon in the N-terminal region of threonine synthase.

Science.gov (United States)

Kaur, Gurmeet; Subramanian, Srikrishna

2017-10-18

Threonine synthase (TS) catalyzes the terminal reaction in the biosynthetic pathway of threonine and requires pyridoxal phosphate as a cofactor. TSs share a common catalytic domain with other fold type II PALP dependent enzymes. TSs are broadly grouped into two classes based on their sequence, quaternary structure, and enzyme regulation. We report the presence of a novel zinc ribbon domain in the N-terminal region preceding the catalytic core in TS. The zinc ribbon domain is present in TSs belonging to both classes. Our sequence analysis reveals that archaeal TSs possess all zinc chelating residues to bind a metal ion that are lacking in the structurally characterized homologs. Phylogenetic analysis suggests that TSs with an N-terminal zinc ribbon likely represents the ancestral state of the enzyme while TSs without a zinc ribbon must have diverged later in specific lineages. The zinc ribbon and its N- and C-terminal extensions are important for enzyme stability, activity and regulation. It is likely that the zinc ribbon domain is involved in higher order oligomerization or mediating interactions with other biomolecules leading to formation of larger metabolic complexes.

Study on grown-in defects in CZ-Si by positron annihilation

International Nuclear Information System (INIS)

Nakagawa, S.; Hori, F.; Oshima, R.

2004-01-01

In order to study the nature of grown-in microdefects of a silicon wafer taken from a czochralski-grown single crystal (CZ-Si) in which ring oxidation-induced stacking faults (ring-OSF) are formed after oxidation heat treatment, positron annihilation coincidence Doppler broadening experiments (CDB) have been performed. Vacancy-type defects were detected in the central region of a wafer of an as-grown crystal, and they were changed with annealing. It was confirmed that different types of defects were formed in the regions of outside and inside of the ring-OSF. (orig.)

HOOKED FLARE RIBBONS AND FLUX-ROPE-RELATED QSL FOOTPRINTS

Energy Technology Data Exchange (ETDEWEB)

Zhao, Jie; Li, Hui [Key Laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory, CAS, Nanjing 210008 (China); Gilchrist, Stuart A.; Aulanier, Guillaume; Schmieder, Brigitte; Pariat, Etienne, E-mail: nj.lihui@pmo.ac.cn [LESIA, Observatoire de Paris, PSL Research University, CNRS, Sorbonne Universités, UPMC Univ. Paris 06, Univ. Paris-Diderot, Sorbonne Paris Cité, 5 place Jules Janssen, F-92195 Meudon (France)

2016-05-20

We studied the magnetic topology of active region 12158 on 2014 September 10 and compared it with the observations before and early in the flare that begins at 17:21 UT (SOL2014-09-10T17:45:00). Our results show that the sigmoidal structure and flare ribbons of this active region observed by the Solar Dynamics Observatory /Atmospheric Imaging Assembly can be well reproduced from a Grad–Rubin nonlinear force-free field extrapolation method. Various inverse-S- and inverse-J-shaped magnetic field lines, which surround a coronal flux rope, coincide with the sigmoid as observed in different extreme-ultraviolet wavelengths, including its multithreaded curved ends. Also, the observed distribution of surface currents in the magnetic polarity where it was not prescribed is well reproduced. This validates our numerical implementation and setup of the Grad–Rubin method. The modeled double inverse-J-shaped quasi-separatrix layer (QSL) footprints match the observed flare ribbons during the rising phase of the flare, including their hooked parts. The spiral-like shape of the latter may be related to a complex pre-eruptive flux rope with more than one turn of twist, as obtained in the model. These ribbon-associated flux-rope QSL footprints are consistent with the new standard flare model in 3D, with the presence of a hyperbolic flux tube located below an inverse-teardrop-shaped coronal QSL. This is a new step forward forecasting the locations of reconnection and ribbons in solar flares and the geometrical properties of eruptive flux ropes.

HOOKED FLARE RIBBONS AND FLUX-ROPE-RELATED QSL FOOTPRINTS

International Nuclear Information System (INIS)

Zhao, Jie; Li, Hui; Gilchrist, Stuart A.; Aulanier, Guillaume; Schmieder, Brigitte; Pariat, Etienne

2016-01-01

We studied the magnetic topology of active region 12158 on 2014 September 10 and compared it with the observations before and early in the flare that begins at 17:21 UT (SOL2014-09-10T17:45:00). Our results show that the sigmoidal structure and flare ribbons of this active region observed by the Solar Dynamics Observatory /Atmospheric Imaging Assembly can be well reproduced from a Grad–Rubin nonlinear force-free field extrapolation method. Various inverse-S- and inverse-J-shaped magnetic field lines, which surround a coronal flux rope, coincide with the sigmoid as observed in different extreme-ultraviolet wavelengths, including its multithreaded curved ends. Also, the observed distribution of surface currents in the magnetic polarity where it was not prescribed is well reproduced. This validates our numerical implementation and setup of the Grad–Rubin method. The modeled double inverse-J-shaped quasi-separatrix layer (QSL) footprints match the observed flare ribbons during the rising phase of the flare, including their hooked parts. The spiral-like shape of the latter may be related to a complex pre-eruptive flux rope with more than one turn of twist, as obtained in the model. These ribbon-associated flux-rope QSL footprints are consistent with the new standard flare model in 3D, with the presence of a hyperbolic flux tube located below an inverse-teardrop-shaped coronal QSL. This is a new step forward forecasting the locations of reconnection and ribbons in solar flares and the geometrical properties of eruptive flux ropes.

Variation of boron concentration in metallic glass ribbons

International Nuclear Information System (INIS)

Nagy, A.Z.; Vasvari, B.; Bakos, L.; Duwez, P.; Bogancs, J.; Nazarov, V.M.

1980-01-01

The boron concentration of Fe 40 Ni 40 P 14 B 6 , Fe 32 Ni 36 Cr 14 P 12 B 6 and Fe 40 Ni 40 B 20 metallic glasses is measured by neutron activation analysis on both surfaces of the ribbon samples. It is found that the boron concentration is always higher on the bright side of the ribbon than that on the dull side which is in contact with the cold surface of the wheel during the rapid quenching from the melt. A possible explanation is given in terms of the solid-liquid interface moving rapidly from the cooled surface to the free surface when preparing the samples. (author)

Growth of YBCO superconducting thin films on CaF sub 2 buffered silicon

CERN Document Server

Bhagwat, S S; Patil, J M; Shirodkar, V S

2000-01-01

CaF sub 2 films were grown on silicon using the neutral cluster beam deposition technique. These films were highly crystalline and c-axis oriented. Superconducting YBCO thin films were grown on the Ca F sub 2 buffered silicon using the laser ablation technique. These films showed T sub c (onset) at 90 K and Tc(zero) at 86 K. X-ray diffraction analysis showed that the YBCO films were also oriented along the c-axis.

Low-frequency magnetization processes in chemically etched Co-based amorphous ribbons

International Nuclear Information System (INIS)

Betancourt, I.; Martinez, L.A.; Valenzuela, R.

2005-01-01

In this report we present a study of the magnetization processes for Co-based amorphous ribbons at low frequencies (10 Hz-13 MHz) as a function of decreasing thicknesses attained by chemical etching. Reversible domain-wall bulging, characterized by initial permeability and relaxation frequency, was monitored by means of inductance measurements. The real part of inductance (proportional to initial permeability) exhibited a decreasing trend with diminishing ribbon thickness, together with an increasing tendency for the relaxation frequency. For high amplitude of the ac field (leading to domain-wall unpinning), reduced ribbon thickness showed a deleterious-enhancement effect on irreversible domain-wall displacement, which was observed for both real and imaginary inductance spectroscopic plots. Results are interpreted in terms of reduced domain-wall pinning distances resulting from thinner alloy samples

A new dental powder from nanocrystalline melt-spun Ag-Sn-Cu alloy ribbons

International Nuclear Information System (INIS)

Do-Minh, N.; Le-Thi, C.; Nguyen-Anh, S.

2003-01-01

A new non-gamma-two dental powder has been developed from nanocrystalline melt-spun Ag-Sn-Cu alloy ribbons. The amalgam made from this powder exhibits excellent properties for dental filling. The nanocrystalline microstructure was found for the first time in as-spun and heat treated Ag(27-28)Sn(9-32) Cu alloy ribbons, using X-ray diffraction, scanning electron microscopy and energy-dispersive spectroscopy. As-spun ribbons exhibited a multi-phase microstructure with preferred existence of β (Ag 4 Sn) phase formed during rapid solidification (RS) due to supersaturating of copper (Cu) atoms and homogenous nanostructure with subgrain size of about (40-50) nm, which seems to be developed during RS process and can be caused by eutectic reaction of the Ag 3 Sn/Ag 4 Sn-Cu 3 Sn system. In heat treated ribbons the clustering of Cu atoms was always favored and stable in an ageing temperature and time interval determined by Cu content. The heat treatment led to essential changes of subgrain morphology, resulted in the appearance of large-angle boundaries with fine Cu 3 Sn precipitates and forming typical recrystallization twins. Such a microstructure variation in melt-spun ribbons could eventually yield enhanced technological, clinical and physical properties of the dental products, controlled by the ADA Specification N deg 1 and reported before. Thus, using the rapid solidification technique a new non-gamma-two dental material of high quality, nanocrystalline ribbon powder, can be produced. Copyright (2003) AD-TECH - International Foundation for the Advancement of Technology Ltd

Magnetic properties, phase evolution, and microstructure of the Co–Zr–V ribbons

International Nuclear Information System (INIS)

Hou, Zhipeng; Su, Feng; Xu, Shifeng; Zhang, Jinbao; Wu, Chunji; Liu, Dan; Wei, Beipei; Wang, Wenquan

2013-01-01

The substitution of V for Zr significantly impeded the growth of grain in the Co 82 Zr 18 ribbons during melt spinning and the amorphous Co 82 Zr 13 V 5 melt-spun ribbons were successfully produced at a wheel speed of 40 m/s. The values of coercivity H c and maximum energy product (BH) max first increased, reaching maximum at 560 °C and then they decreased sharply with increasing the annealing temperature. The optimal magnetic properties of H c =4.0 kOe and (BH) max =5.0 MGOe were obtained in the amorphous ribbons annealed at 560 °C. A suitable grain size of Co 11 Zr 2 phase was considered to be the main reason for the increase in coercivity. - Highlights: • High performance was obtained in Co 82 Zr 13 V 5 amorphous ribbons annealed. • We proved the hard magnetic phase was Co 11 Zr 2 phase. • Suitable grain size of Co 11 Zr 2 phase was the main reason for increase in coercivity

Crystalline silicon films sputtered on molybdenum A study of the silicon-molybdenum interface

Energy Technology Data Exchange (ETDEWEB)

Reinig, P.; Fenske, F.; Fuhs, W.; Schoepke, A.; Selle, B

2003-04-15

Polycrystalline silicon films were grown on molybdenum (Mo)-coated substrates at high deposition rate using the pulsed magnetron sputtering technique. Our study investigates the silicon-molybdenum interface of these films to elucidate stimulating mechanisms for an ordered crystalline silicon thin film growth. Both Auger electron spectroscopy and Rutherford backscattering reveal that at a substrate temperature as low as T{sub S}=450 deg. C during the deposition process intermixing of Si and Mo at the Si-Mo interface takes place leading to a compositional ratio Mo:Si of about 1:2. By Raman spectroscopy hexagonal {beta}-MoSi{sub 2} could be identified as the dominant phase in this intermixed region. The dependence of the resulting thickness of the reacted interface layer on the deposition conditions is not fully understood yet.

Crystalline silicon films sputtered on molybdenum A study of the silicon-molybdenum interface

International Nuclear Information System (INIS)

Reinig, P.; Fenske, F.; Fuhs, W.; Schoepke, A.; Selle, B.

2003-01-01

Polycrystalline silicon films were grown on molybdenum (Mo)-coated substrates at high deposition rate using the pulsed magnetron sputtering technique. Our study investigates the silicon-molybdenum interface of these films to elucidate stimulating mechanisms for an ordered crystalline silicon thin film growth. Both Auger electron spectroscopy and Rutherford backscattering reveal that at a substrate temperature as low as T S =450 deg. C during the deposition process intermixing of Si and Mo at the Si-Mo interface takes place leading to a compositional ratio Mo:Si of about 1:2. By Raman spectroscopy hexagonal β-MoSi 2 could be identified as the dominant phase in this intermixed region. The dependence of the resulting thickness of the reacted interface layer on the deposition conditions is not fully understood yet

Large magnetic entropy change in melt-spun LaFe11.5Si1.5 ribbons

International Nuclear Information System (INIS)

Xie Kun; Song Xiaoping; Zhu Yaoming; Lv Weipeng; Sun Zhanbo

2004-01-01

The microstructure transformation and the magnetic entropy change of LaFe 11.5 Si 1.5 melt-spun ribbons were investigated. The melt-spun ribbons show a homogeneous distribution of elements, and the homogeneity develops further after 5 h annealing. XRD results show that the ribbons are composed of NaZn 13 -type LaFe 11.5 Si 1.5 compounds and an α-Fe phase. After annealing, the ribbons crystallize well in the NaZn 13 -type structure and exhibit a very large magnetic entropy change. A first-order magnetic transition is observed in the annealed ribbons, and this is believed to be the origin of the large magnetic entropy. These results suggest that NaZn 13 -type LaFe 11.5 Si 1.5 compounds with a large magnetic entropy change can be produced by melt-spinning, the annealing time can be shortened significantly and the production cost of the magnetic refrigerant will be cut down accordingly

Structured epitaxial graphene: growth and properties

International Nuclear Information System (INIS)

Hu Yike; Ruan Ming; Guo Zelei; Dong Rui; Palmer, James; Hankinson, John; Berger, Claire; Heer, Walt A de

2012-01-01

Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently demonstrated viable graphene devices are essentially limited to micrometre-sized ultrahigh-frequency analogue field effect transistors and quantum Hall effect devices for metrology. Nanoscopically patterned graphene tends to have disordered edges that severely reduce mobilities thereby obviating its advantage over other materials. Here we show that graphene grown on structured silicon carbide surfaces overcomes the edge roughness and promises to provide an inroad into nanoscale patterning of graphene. We show that high-quality ribbons and rings can be made using this technique. We also report on the progress towards high-mobility graphene monolayers on silicon carbide for device applications. (paper)

Characterization of nanostructured CuO-porous silicon matrix formed on copper-coated silicon substrate via electrochemical etching

Science.gov (United States)

Naddaf, M.; Mrad, O.; Al-zier, A.

2014-06-01

A pulsed anodic etching method has been utilized for nanostructuring of a copper-coated p-type (100) silicon substrate, using HF-based solution as electrolyte. Scanning electron microscopy reveals the formation of a nanostructured matrix that consists of island-like textures with nanosize grains grown onto fiber-like columnar structures separated with etch pits of grooved porous structures. Spatial micro-Raman scattering analysis indicates that the island-like texture is composed of single-phase cupric oxide (CuO) nanocrystals, while the grooved porous structure is barely related to formation of porous silicon (PS). X-ray diffraction shows that both the grown CuO nanostructures and the etched silicon layer have the same preferred (220) orientation. Chemical composition obtained by means of X-ray photoelectron spectroscopic (XPS) analysis confirms the presence of the single-phase CuO on the surface of the patterned CuO-PS matrix. As compared to PS formed on the bare silicon substrate, the room-temperature photoluminescence (PL) from the CuO-PS matrix exhibits an additional weak `blue' PL band as well as a blue shift in the PL band of PS (S-band). This has been revealed from XPS analysis to be associated with the enhancement in the SiO2 content as well as formation of the carbonyl group on the surface in the case of the CuO-PS matrix.

Formation of copper precipitates in silicon

Science.gov (United States)

Flink, Christoph; Feick, Henning; McHugo, Scott A.; Mohammed, Amna; Seifert, Winfried; Hieslmair, Henry; Heiser, Thomas; Istratov, Andrei A.; Weber, Eicke R.

1999-12-01

The formation of copper precipitates in silicon was studied after high-temperature intentional contamination of p- and n-type FZ and Cz-grown silicon and quench to room temperature. With the Transient Ion Drift (TID) technique on p-type silicon a critical Fermi level position at EC-0.2 eV was found. Only if the Fermi level position, which is determined by the concentrations of the acceptors and the copper donors, surpasses this critical value precipitation takes place. If the Fermi level is below this level the supersaturated interstitial copper diffuses out. An electrostatic precipitation model is introduced that correlates the observed precipitation behavior with the electrical activity of the copper precipitates as detected with Deep Level Transient Spectroscopy (DLTS) on n-type and with Minority Carrier Transient Spectroscopy (MCTS) on p-type silicon.

Large-Signal Injection-Level Spectroscopy of Impurities in Silicon

International Nuclear Information System (INIS)

Ahrenkiel, R.K.; Johnston, S.W.

1998-01-01

Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to an ultra-pure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model

75 FR 41808 - Narrow Woven Ribbons With Woven Selvedge From the People's Republic of China: Final Determination...

Science.gov (United States)

2010-07-19

... Ribbon Company, Inc. (``Petitioner''); Yama; and Yangzhou Bestpak Gifts & Crafts Co., Ltd. (``Bestpak... liquid petroleum gas from the supplier to Yama's factory.\\10\\ \\10\\ See Final Analysis Memorandum for Yama... limited to gift bags, gift boxes and/ or other types of ribbon. Narrow woven ribbons subject to the...

A double perturbation method of postbuckling analysis in 2D curved beams for assembly of 3D ribbon-shaped structures

Science.gov (United States)

Fan, Zhichao; Hwang, Keh-Chih; Rogers, John A.; Huang, Yonggang; Zhang, Yihui

2018-02-01

Mechanically-guided 3D assembly based on controlled, compressive buckling represents a promising, emerging approach for forming complex 3D mesostructures in advanced materials. Due to the versatile applicability to a broad set of material types (including device-grade single-crystal silicon) over length scales from nanometers to centimeters, a wide range of novel applications have been demonstrated in soft electronic systems, interactive bio-interfaces as well as tunable electromagnetic devices. Previously reported 3D designs relied mainly on finite element analyses (FEA) as a guide, but the massive numerical simulations and computational efforts necessary to obtain the assembly parameters for a targeted 3D geometry prevent rapid exploration of engineering options. A systematic understanding of the relationship between a 3D shape and the associated parameters for assembly requires the development of a general theory for the postbuckling process. In this paper, a double perturbation method is established for the postbuckling analyses of planar curved beams, of direct relevance to the assembly of ribbon-shaped 3D mesostructures. By introducing two perturbation parameters related to the initial configuration and the deformation, the highly nonlinear governing equations can be transformed into a series of solvable, linear equations that give analytic solutions to the displacements and curvatures during postbuckling. Systematic analyses of postbuckling in three representative ribbon shapes (sinusoidal, polynomial and arc configurations) illustrate the validity of theoretical method, through comparisons to the results of experiment and FEA. These results shed light on the relationship between the important deformation quantities (e.g., mode ratio and maximum strain) and the assembly parameters (e.g., initial configuration and the applied strain). This double perturbation method provides an attractive route to the inverse design of ribbon-shaped 3D geometries, as

X-ray diffraction study of directionally grown perylene crystallites

DEFF Research Database (Denmark)

Breiby, Dag W.; Lemke, H. T.; Hammershøj, P.

2008-01-01

Using grazing incidence X-ray diffraction, perylene crystallites grown on thin highly oriented poly(tetrafluoroethylene) (PTFE) films on silicon substrates have been investigated. All the perylene crystallites are found to orient with the ab plane of the monoclinic unit cell parallel to the subst......Using grazing incidence X-ray diffraction, perylene crystallites grown on thin highly oriented poly(tetrafluoroethylene) (PTFE) films on silicon substrates have been investigated. All the perylene crystallites are found to orient with the ab plane of the monoclinic unit cell parallel...... to the substrate. The scattering data is interpreted as a trimodal texture of oriented perylene crystallites, induced by interactions between the perylene molecules and the oriented PTFE substrate. Three families of biaxial orientations are seen, with the axes (h = 1, 2, or 3) parallel to the PTFE alignment......, all having the ab-plane parallel to the substrate. About 92% of the scattered intensity corresponds to a population with highly parallel to (PTFE)....

A proposed mechanism for investigating the effect of porous silicon buffer layer on TiO{sub 2} nanorods growth

Energy Technology Data Exchange (ETDEWEB)

Rahmani, N. [Department of Physics, Alzahra University, Tehran, 1993893973 (Iran, Islamic Republic of); Dariani, R.S., E-mail: dariani@alzahra.ac.ir [Department of Physics, Alzahra University, Tehran, 1993893973 (Iran, Islamic Republic of); Rajabi, M. [Deparment of Advanced Materials and Renewable Energies, Iranian Research Organization for Science and Technology (IROST), Tehran 3353136846 (Iran, Islamic Republic of)

2016-03-15

Graphical abstract: - Highlights: • TiO{sub 2} nanorods (NRs) are synthesized on silicon and porous silicon (PS) substrates by hydrothermal method. • TiO{sub 2} NRs grown on PS substrates have a better growth compared to those grown on silicon. • Also increasing substrate porosity leads to an increase in density of the NRs. • We proposed a growth mechanism to explain how can control the local surface chemical potential. - Abstract: In this study, we have synthesized TiO{sub 2} nanorods (NRs) on silicon and porous silicon (PS) substrates by hydrothermal method. The PS substrates with different porosities were fabricated by electrochemical anodization on silicon. According to the field emission electron microscopy images, TiO{sub 2} NRs grown on PS substrates have a better growth compared to those grown on silicon. Also increasing substrate porosity leads to an increase in density of the NRs. Atomic force microscopy observation demonstrates that porous layer formation due to etching of silicon surface leads to an increase of its roughness. Results indicate surface roughness evolution with porosity increasing enhances TiO{sub 2} nucleation on substrate and thus increases TiO{sub 2} NRs density. We propose a growth mechanism to explain how we can control the local surface chemical potential and thus the nucleation and alignment of TiO{sub 2} NRs by surface roughness variation. Also, photoluminescence studies show a red-shift in band gap energy of NRs compared to that of common bulk TiO{sub 2}.

Growth, Carbon Isotope Discrimination and Nitrogen Uptake in Silicon and/or Potassium Fed barley Grown under Two Watering Regimes

Directory of Open Access Journals (Sweden)

Kurdali, Fawaz

2013-02-01

Full Text Available The present pot experiment was an attempt to monitor the beneficial effects of silicon (Si and/or potassium (K applications on growth and nitrogen uptake in barley plants grown under water (FC1 and non water (FC2 stress conditions using 15N and 13C isotopes. Three fertilizer rates of Si (Si50, Si100 and Si200 and one fertilizer rate of K were used. Dry matter (DM and N yield (NY in different plant parts of barley plants was affected by Si and/ or K fertilization as well as by the watering regime level under which the plants have been grown. Solely added K or in combination with adequate rate of Si (Si 100 were more effective in alleviating water stress and producing higher yield in barley plants than solely added Si. However, the latter nutrient was found to be more effective than the former in producing higher spike's N yield. Solely added Si or in combination with K significantly reduced leaves ∆13 C reflecting their bifacial effects on water use efficiency (WUE, particularly in plants grown under well watering regime. This result indicated that Si might be involved in saving water loss through reducing transpiration rate and facilitating water uptake; consequently, increasing WUE. Although the rising of soil humidity generally increased fertilizer nitrogen uptake (Ndff and its use efficiency (%NUE in barley plants, applications of K or Si fertilizers to water stressed plants resulted in significant increments of these parameters as compared with the control. Our results highlight that Si or K is not only involved in amelioration of growth of barley plants, but can also improve nitrogen uptake and fertilizer nitrogen use efficiency particularly under water deficit conditions.

The sandwich domain structure in a Fe-based amorphous ribbon with uniaxial magnetic anisotropy

International Nuclear Information System (INIS)

Zhmetko, D.N.; Matsura, A.V.; Troschenkov, Y.N.; Seidametov, S.V.

2011-01-01

The formation and motion of two domain walls parallel to the ribbon surface are discovered during its dynamic magnetic reversal. The domain walls form near by the middle plane of a ribbon and move to its opposite main surfaces with different velocities.

Synthesis of MoS{sub 2} ribbons and their branched structures by chemical vapor deposition in sulfur-enriched environment

Energy Technology Data Exchange (ETDEWEB)

Mahyavanshi, Rakesh D., E-mail: rmahyavanshi@gmail.com [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Sharma, Kamal P. [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kondo, Masuharu; Dewa, Takeshita [Department of Life Science and Applied Chemistry, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kawahara, Toshio [Department of Electronics and Information Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501 (Japan); Tanemura, Masaki [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2017-07-01

Highlights: • We demonstrate synthesis of monolayer MoS{sub 2} ribbons and their branched structures. • Unidirectional, bi and tri-directional growth of ribbons from the nucleation point are obtained. • Unidirectional and other branched structures can be synthesized controlling the composition of MoO{sub 3} and sulfur vapor. • The ribbons possess uneven edge structures with angles of 60° and 120°, indicating molybdenum and sulfur terminations. - Abstract: Here, we demonstrate the synthesis of monolayer molybdenum disulfide (MoS{sub 2}) ribbons and their branched structures by chemical vapor deposition (CVD) in sulfur-enriched environment. The growth of the MoS{sub 2} ribbons, triangular and other crystals significantly depends on the exposure of sulfur and concentration of molybdenum oxide (MoO{sub 3}) vapor on the substrate surface. The width and length of the synthesized ribbons is around 5–10 and 50–100 μm, respectively, where the width reduces from the nucleation point toward the end of the ribbon. Unidirectional, bi and tri-directional growth of ribbons from the nucleation point with an angle of 60° and 120° were obtained attributing to crystallographic growth orientation of MoS{sub 2} crystals. The directional growth of dichalcogenides ribbons is a significant challenge, our process shows that such unidirectional and other branched structures can be achieved by controlling the stoichiometric composition of MoO{sub 3} and sulfur exposure on the substrate surface. Interestingly, all the individual and branched ribbons possess uneven abundant edge structures, where the edges are formed with angles of 60° and 120°, indicating variation in molybdenum and sulfur edge terminations. The directional growth of MoS{sub 2} ribbons with defined edge structures in particular CVD condition can open up new possibilities for electronic and electrochemical applications.

Self-diffusion in single crystalline silicon nanowires

Science.gov (United States)

Südkamp, T.; Hamdana, G.; Descoins, M.; Mangelinck, D.; Wasisto, H. S.; Peiner, E.; Bracht, H.

2018-04-01

Self-diffusion experiments in single crystalline isotopically controlled silicon nanowires with diameters of 70 and 400 nm at 850 and 1000 °C are reported. The isotope structures were first epitaxially grown on top of silicon substrate wafers. Nanowires were subsequently fabricated using a nanosphere lithography process in combination with inductively coupled plasma dry reactive ion etching. Three-dimensional profiling of the nanosized structure before and after diffusion annealing was performed by means of atom probe tomography (APT). Self-diffusion profiles obtained from APT analyses are accurately described by Fick's law for self-diffusion. Data obtained for silicon self-diffusion in nanowires are equal to the results reported for bulk silicon crystals, i.e., finite size effects and high surface-to-volume ratios do not significantly affect silicon self-diffusion. This shows that the properties of native point defects determined from self-diffusion in bulk crystals also hold for nanosized silicon structures with diameters down to 70 nm.

38 CFR 21.9700 - Yellow Ribbon Program.

Science.gov (United States)

2010-07-01

... Yellow Ribbon Program and the student maintains satisfactory progress, conduct, and attendance according...) Based on student status (i.e. , undergraduate, graduate, doctoral), or (ii) For each subelement of the institution (i.e., college or professional school). The maximum amount specified for each subelement of the...

Controlling the microstructure and associated magnetic properties of Ni0.2Mn3.2Ga0.6 melt-spun ribbons by annealing

Directory of Open Access Journals (Sweden)

Mahmud Khan

2017-05-01

Full Text Available Here we report on the structural and magnetic properties of Ni0.2Mn3.2Ga0.6 melt-spun ribbons. The as-spun ribbons were found to exhibit mixed cubic phases that transform to non-cubic structure upon annealing. Additionally, an amorphous phase was found to co-exist in all ribbons. The SEM images show that minor grain formation occurs on the as-spun ribbons. However, the formation of extensive nano-grains was observed on the surfaces of the annealed ribbons. While the as-spun ribbons exhibit predominantly paramagnetic behavior, the ribbons annealed under various thermal conditions were found to be ferromagnetic with a Curie temperature of about 380 K. The ribbons annealed at 450 °C for 30 minutes exhibit a large coercive field of about 2500 Oe. The experimental results show that the microstructure and associated magnetic properties of the ribbons can be controlled by annealing techniques. The coercive fields and the shape of the magnetic hysteresis loops vary significantly with annealing conditions. Exchange bias effects have also been observed in the annealed ribbons.

Counting molecular-beam grown graphene layers

Energy Technology Data Exchange (ETDEWEB)

Plaut, Annette S. [School of Physics, University of Exeter, Exeter EX4 4QL (United Kingdom); Wurstbauer, Ulrich [Department of Physics, Columbia University, New York, New York 10027 (United States); Pinczuk, Aron [Department of Physics, Columbia University, New York, New York 10027 (United States); Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States); Garcia, Jorge M. [MBE Lab, IMM-Instituto de Microelectronica de Madrid (CNM-CSIC), Madrid, E-28760 (Spain); Pfeiffer, Loren N. [Electrical Engineering Department, Princeton University, New Jersey 08544 (United States)

2013-06-17

We have used the ratio of the integrated intensity of graphene's Raman G peak to that of the silicon substrate's first-order optical phonon peak, accurately to determine the number of graphene layers across our molecular-beam (MB) grown graphene films. We find that these results agree well both, with those from our own exfoliated single and few-layer graphene flakes, and with the results of Koh et al.[ACS Nano 5, 269 (2011)]. We hence distinguish regions of single-, bi-, tri-, four-layer, etc., graphene, consecutively, as we scan coarsely across our MB-grown graphene. This is the first, but crucial, step to being able to grow, by such molecular-beam-techniques, a specified number of large-area graphene layers, to order.

ANALYSIS OF RIBBONING ON CONICAL YARN PACKAGE WOUND BY OPENEND SPINNING MACHINES

Directory of Open Access Journals (Sweden)

Resul FETTAHOV

2001-03-01

Full Text Available In this paper, Ribboning , one of the common faults in yarn packages, is mathematically analysed. If yarn is repeatly laid on top of or along the same path as the previously wound yarn, this duplication of yarn path on the package creates a defect known as ribboning. The number of turns of package (n per double traverse of yarn guide is calculated in two different way One is calculated the length of a coil on the package and total length of yarn in a double traverse; the other is considered transmission rate between drum and conical yarn package The result of two different approach is similar and the probable diameter of conical yarn package which ribboning is occurred is calculated and used on Schalafhorst-Autocore OE spinning machines.

On the nature of structural disorder in calcium silicate hydrates with a calcium/silicon ratio similar to tobermorite

Energy Technology Data Exchange (ETDEWEB)

Grangeon, Sylvain, E-mail: S.Grangeon@brgm.fr [BRGM, 3, Avenue Claude Guillemin, 45060 Orléans Cedex 2 (France); Claret, Francis; Lerouge, Catherine [BRGM, 3, Avenue Claude Guillemin, 45060 Orléans Cedex 2 (France); Warmont, Fabienne [CRMD, UMR 6619 – CNRS, 1b rue de la férollerie, 45071 Orléans Cedex 2 (France); Sato, Tsutomu; Anraku, Sohtaro [Laboratory of Environmental Geology, Research Group of Geoenvironmental/Engineering Division of Solid Waste, Resources and Geoenvironmental/Engineering Graduate School of Engineering, Hokkaido University, Kita 13 Nishi 8, Sapporo 060-8628 (Japan); Numako, Chiya [Faculty of Integrated Arts and Sciences, The University of Tokushima, 1-1, Minami-Josanjima, Tokushima, 770-8502 (Japan); Linard, Yannick [ANDRA, Centre de Meuse/Haute Marne, 55290 Bure (France); Lanson, Bruno [ISTerre, Grenoble University, CNRS, F-38041 Grenoble (France)

2013-10-15

Four calcium silicate hydrates (C-S-H) with structural calcium/silicon (Ca/Si) ratios ranging from 0.82 ± 0.02 to 0.87 ± 0.02 were synthesized at room temperature, 50, 80, and 110 °C. Their structure was elucidated by collating information from electron probe micro-analysis, transmission electron microscopy, extended X-ray absorption fine structure spectroscopy, and powder X-ray diffraction (XRD). A modeling approach specific to defective minerals was used because sample turbostratism prevented analysis using usual XRD refinement techniques (e.g. Rietveld analysis). It is shown that C-S-H with Ca/Si ratio of ∼ 0.8 are structurally similar to nano-crystalline turbostratic tobermorite, a naturally occurring mineral. Their structure thus consists of sheets of calcium atoms in 7-fold coordination, covered by ribbons of silicon tetrahedra with a dreierketten (wollastonite-like) organization. In these silicate ribbons, 0.42 Si per bridging tetrahedron are missing. Random stacking faults occur systematically between successive layers (turbostratic stacking). Layer-to-layer distance is equal to 11.34 Å. Crystallites have a mean size of 10 nm in the a–b plane, and a mean number of 2.6–2.9 layers stacked coherently along the c* axis.

Orthogonal ribbons for suspending test masses in interferometric gravitational wave detectors

International Nuclear Information System (INIS)

Lee, B.H.; Ju, L.; Blair, D.G.

2005-01-01

We show that a simple modification of proposed ribbon suspensions for laser interferometric gravitational wave detectors can substantially reduce the amplitude of violin modes at the expense of a small deterioration of suspension thermal noise. Using low loss fused silica, large amplitude peaks which cause dynamic range problems can be reduced by 21 dB. The total number of horizontal longitudinal direction violin modes below 5 kHz is reduced to less than half that expected with conventional ribbon suspensions

Orthogonal ribbons for suspending test masses in interferometric gravitational wave detectors

Energy Technology Data Exchange (ETDEWEB)

Lee, B.H. [School of Physics, University of Western Australia, Crawley 6009, WA (Australia)]. E-mail: bhl@physics.uwa.edu.au; Ju, L. [School of Physics, University of Western Australia, Crawley 6009, WA (Australia); Blair, D.G. [School of Physics, University of Western Australia, Crawley 6009, WA (Australia)

2005-05-23

We show that a simple modification of proposed ribbon suspensions for laser interferometric gravitational wave detectors can substantially reduce the amplitude of violin modes at the expense of a small deterioration of suspension thermal noise. Using low loss fused silica, large amplitude peaks which cause dynamic range problems can be reduced by 21 dB. The total number of horizontal longitudinal direction violin modes below 5 kHz is reduced to less than half that expected with conventional ribbon suspensions.

Migration of CrSi2 nanocrystals through nanopipes in the silicon cap

International Nuclear Information System (INIS)

Galkin, N.G.; Dozsa, L.; Chusovitin, E.A.; Pecz, B.; Dobos, L.

2010-01-01

CrSi 2 nanocrystals (NC) were grown by reactive deposition epitaxy of Cr at 550 deg. C. After deposition the Cr is localized in about 20-30 nm dots on the Si surface. The NCs were covered by silicon cap grown by molecular beam epitaxy at 700 deg. C. The redistribution of NCs in the silicon cap was investigated by transmission electron microscopy and atomic force microscopy. The NCs are partly localized at the deposition depth, and partly migrate near the surface. A new migration mechanism of the CrSi 2 NCs is observed, they are transferred from the bulk toward the surface through nanopipes formed in the silicon cap. The redistribution of CrSi 2 NCs strongly depends on Cr deposition rate and on the cap growth temperature.

Topographic and spectroscopic characterization of electronic edge states in CVD grown graphene nanoribbons.

Science.gov (United States)

Pan, Minghu; Girão, E Costa; Jia, Xiaoting; Bhaviripudi, Sreekar; Li, Qing; Kong, Jing; Meunier, V; Dresselhaus, Mildred S

2012-04-11

We used scanning tunneling microscopy and spectroscopy (STM/S) techniques to analyze the relationships between the edge shapes and the electronic structures in as-grown chemical vapor deposition (CVD) graphene nanoribbons (GNRs). A rich variety of single-layered graphene nanoribbons exhibiting a width of several to 100 nm and up to 1 μm long were studied. High-resolution STM images highlight highly crystalline nanoribbon structures with well-defined and clean edges. Theoretical calculations indicate clear spin-split edge states induced by electron-electron Coulomb repulsion. The edge defects can significantly modify these edge states, and different edge structures for both sides of a single ribbon produce asymmetric electronic edge states, which reflect the more realistic features of CVD grown GNRs. Three structural models are proposed and analyzed to explain the observations. By comparing the models with an atomic resolution image at the edge, a pristine (2,1) structure was ruled out in favor of a reconstructed edge structure composed of 5-7 member rings, showing a better match with experimental results, and thereby suggesting the possibility of a defective morphology at the edge of CVD grown nanoribbons. © 2012 American Chemical Society

X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates.

Science.gov (United States)

Zaumseil, Peter; Kozlowski, Grzegorz; Yamamoto, Yuji; Schubert, Markus Andreas; Schroeder, Thomas

2013-08-01

On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III-V and II-VI materials.

Effect of annealing temperature on the thermal stress and dislocation density of mc-Si ingot grown by DS process for solar cell application

Science.gov (United States)

Sanmugavel, S.; Srinivasan, M.; Aravinth, K.; Ramasamy, P.

2018-04-01

90% of the solar industries are using crystalline silicon. Cost wise the multi-crystalline silicon solar cells are better compared to mono crystalline silicon. But because of the presence of grain boundaries, dislocations and impurities, the efficiency of the multi-crystalline silicon solar cells is lower than that of mono crystalline silicon solar cells. By reducing the defect and dislocation we can achieve high conversion efficiency. The velocity of dislocation motion increases with stress. By annealing the grown ingot at proper temperature we can decrease the stress and dislocation. Our simulation results show that the value of stress and dislocation density is decreased by annealing the grown ingot at 1400K and the input parameters can be implemented in real system to grow a better mc-Si ingot for energy harvesting applications.

Laser process for extended silicon thin film solar cells

International Nuclear Information System (INIS)

Hessmann, M.T.; Kunz, T.; Burkert, I.; Gawehns, N.; Schaefer, L.; Frick, T.; Schmidt, M.; Meidel, B.; Auer, R.; Brabec, C.J.

2011-01-01

We present a large area thin film base substrate for the epitaxy of crystalline silicon. The concept of epitaxial growth of silicon on large area thin film substrates overcomes the area restrictions of an ingot based monocrystalline silicon process. Further it opens the possibility for a roll to roll process for crystalline silicon production. This concept suggests a technical pathway to overcome the limitations of silicon ingot production in terms of costs, throughput and completely prevents any sawing losses. The core idea behind these thin film substrates is a laser welding process of individual, thin silicon wafers. In this manuscript we investigate the properties of laser welded monocrystalline silicon foils (100) by micro-Raman mapping and spectroscopy. It is shown that the laser beam changes the crystalline structure of float zone grown silicon along the welding seam. This is illustrated by Raman mapping which visualizes compressive stress as well as tensile stress in a range of - 147.5 to 32.5 MPa along the welding area.

Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

International Nuclear Information System (INIS)

Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P.C.; Toledano-Luque, M.; Prado, A. del; San Andres, E.; Lucia, M.L.

2011-01-01

Al/ScO x /SiN x /n-Si and Al/ScO x /SiO x /n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high-pressure sputtering on different substrates to study the dielectric/insulator interface quality. The substrates were silicon nitride and native silicon oxide. The use of a silicon nitride interfacial layer between the silicon substrate and the scandium oxide layer improves interface quality, as interfacial state density and defect density inside the insulator are decreased.

Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick J.

1993-01-01

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

Improved field emission properties of carbon nanotubes grown on stainless steel substrate and its application in ionization gauge

Science.gov (United States)

Li, Detian; Cheng, Yongjun; Wang, Yongjun; Zhang, Huzhong; Dong, Changkun; Li, Da

2016-03-01

Vertically aligned carbon nanotube (CNT) arrays were fabricated by chemical vapor deposition (CVD) technique on different substrates. Microstructures and field emission characteristics of the as-grown CNT arrays were investigated systematically, and its application in ionization gauge was also evaluated preliminarily. The results indicate that the as-grown CNT arrays are vertically well-aligned relating to the substrate surfaces, but the CNTs grown on stainless steel substrate are longer and more crystalline than the ones grown on silicon wafer substrate. The field emission behaviors of the as-grown CNT arrays are strongly dependent upon substrate properties. Namely, the CNT array grown on stainless steel substrate has better field emission properties, including lower turn on and threshold fields, better emission stability and repeatability, compared with the one grown on silicon wafer substrate. The superior field emission properties of the CNT array grown on stainless steel substrate are mainly attributed to low contact resistance, high thermal conductivity, good adhesion strength, etc. In addition, the metrological behaviors of ionization gauge with the CNT array grown on stainless steel substrate as an electron source were investigated, and this novel cathode ionization gauge extends the lower limit of linear pressure measurement to 10-8 Pa, which is one order of magnitude lower than the result reported for the same of gauge with CNT cathode.

Variation of magnetic properties with mischmetal content in the resource saving magnets of MM-Fe-B ribbons

Energy Technology Data Exchange (ETDEWEB)

Li, Zhu-bai, E-mail: lzbgj@163.com [Key Laboratory of Integrated Exploitation of Bayan Obo Multi-Metal Resources, Inner Mongolia University of Science and Technology, Baotou 014010 (China); State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, Li-chen [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Geng, Xiao-peng [Inner Mongolia Baotou Steel Rare Earth Magnetic Materials Co.Ltd, Baotou 014030 (China); Hu, Feng-xia; Sun, Ji-rong; Shen, Bao-gen [State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

2017-03-15

Magnetic materials of MM-Fe-B (MM=mischmetal) ribbons were prepared using melt spinning method by varying the content of MM. The ribbons contain minor phases besides the main phase of Re{sub 2}Fe{sub 14}B. X-ray techniques show that the diffraction peak intensities of the minor phase Fe{sub 3}B vary with the content of constituent elements, indicating that the amount of minor phase could be tunable. The squareness of hysteresis loop is the best in MM{sub 13}Fe{sub 80.5}B{sub 6.5} ribbons, which should mainly ascribe to the less amount of minor phase. Henkel plots verify the more uniform magnetization reversals in MM{sub 13}Fe{sub 80.5}B{sub 6.5} ribbons, and the energy product achieves to the maximum of 12.74 MGOe with the coercivity of 6.50 kOe. With the increase of MM content the coercivity increases monotonically, and reaches to 9.13 kOe in MM{sub 15}Fe{sub 77.5}B{sub 7.5} ribbons, which should be related with the nature of the defects in the main phase. These investigations show that optimizing the content of constituent elements and phase constitution could improve magnetic properties in the resource-saving magnets of MM-Fe-B ribbons. - Highlights: • MM-Fe-B (MM=mischmetal) ribbons contains the minor phases besides the main phase of Re{sub 2}Fe{sub 14}B. • The amount of minor phases varies with the content of constituent elements. • The energy product of 12.74 MGOe is obtained in MM{sub 13}Fe{sub 80.5}B{sub 6.5} ribbons by optimizing the phase constitution.

Device for investigation of magnetic flux jumps in ribbon superconductors

International Nuclear Information System (INIS)

Andrianov, A.V.; Bashkirov, Yu.A.; Kremlev, M.G.

1986-01-01

A device for simulation of magnetic flux jumps in superconductors of conducting magnet sandwich-type windings super-applyed of a ribbon conductor is described. A superconducting magnet with a measuring cassetter are the main elements of the device. An external magnetic field is generated by a two-sectional superconducting magnet permitting to simulate the shape of the magnetic field characteristic for sandwich-type windings. Maximum radial component of the magnetic field is 2 T. Jumps of the magnetic flux are recorded by induction transducers and the magnetic field-by Hall trasducer. The effect of coating of standard metal on magnetic flux jumps in Nb 3 Sn base superconducting ribbon is considered

Use of intraventricular ribbon gauze to reduce particulate emboli during aortic valve replacement

Directory of Open Access Journals (Sweden)

Loubani Mahmoud

2006-11-01

Full Text Available Abstract Background The incidence of cerebrovascular accidents following aortic valve surgery remains a devastating complication. The aim of this study was to determine the number of potential embolic material arising during aortic valve replacement and to examine the efficacy of using ribbon gauze in the left ventricle during removal of the native valve and decalcification of the aortic annulus. Methods Ribbon gauze was inserted into the left ventricular cavity prior to aortic valve excision in an unselected, prospectively studied series of 30 patients undergoing aortic valve replacement. A further 30 lengths of ribbon gauze were soaked in the pericardiotomy blood of the same patients and all were subjected to histological analysis. Results The median number of tissue fragments from the aortic valve replacement group was significantly higher than in the control group 5 (0–18 versus 0 (0–1 (p = 3.6 × 10-5. The size of tissue fragments varied between 0.1 and 9.0 mm with a mean of 0.61 ± 1.12 mm and a median of 0.2 mm. There was a significantly higher number of tissue fragments associated with patients having surgery for aortic stenosis when compared with patients who had aortic regurgitation with median of 5 (0–18 versus 0 (0–3 (p = 0.8 × 10-3. Conclusion Significant capture of particulate debris by the intraventricular ribbon gauze suggests that the technique of left ventricular ribbon gauze insertion during aortic valve excision has merit.

Properties of rapidly solidified Fe-Cr-Al ribbons for the use as automotive exhaust gas catalyst substrates

International Nuclear Information System (INIS)

Emmerich, K.

1993-01-01

Metallic honeycomb structures are used as catalyst substrates in automotive exhaust gas systems. This application requires an outstanding corrosion resistance at elevated temperatures of the substrate material. Technical improvements can be achieved by the use of rapid solidification technology for the production of the Fe-Cr-Al ribbons since the Al content can be substantially increased from about 5% Al in the conventionally rolled material to about 12% Al in the rapid solidified ribbon. As a result the lifetime of the ribbon in a higher-temperature corrosion environment is drastically increased. In addition the scale/metal adherance is improved. The impediment of recrystallization in the rapidly solidified ribbons prevents an embrittlement even in carbonizing atmospheres. (orig.)

Multimodal Electrothermal Silicon Microgrippers for Nanotube Manipulation

DEFF Research Database (Denmark)

Nordström Andersen, Karin; Petersen, Dirch Hjorth; Carlson, Kenneth

2009-01-01

Microgrippers that are able to manipulate nanoobjects reproducibly are key components in 3-D nanomanipulation systems. We present here a monolithic electrothermal microgripper prepared by silicon microfabrication, and demonstrate pick-and-place of an as-grown carbon nanotube from a 2-D array onto...

Silicon Crystal Growth by the Electromagnetic Czochralski (EMCZ) Method

Science.gov (United States)

Watanabe, Masahito; Eguchi, Minoru; Hibiya, Taketoshi

1999-01-01

A new method for growing silicon crystals by using electromagnetic force to rotate the melt without crucible rotation has been developed. We call it electromagnetic Czochralski (EMCZ) growth. An electromagnetic force in the azimuthal direction is generated in the melt by the interaction between an electric current (I) through the melt in the radial direction and a vertical magnetic field (B). The rotation rate (ωm) of the silicon melt is continuously changed from 0 to over 105 rpm under I = 0 to 8 A and B = 0 to 0.1 T. Thirty-mm-diameter silicon single crystals free of dislocations could be grown under two conditions: I = 2.0 A and B = 0.05 T (ωm = 105 rpm); and I =0.2 A and B = 0.1 T (ωm = 15 rpm). The oxygen concentration in the crystals was 8 ×1017 atoms/cm3 for the high rotation rate and 1×1017 atoms/cm3 for the low rotation rate. The oxygen-concentration distributions in the radial direction in both crystals were more homogeneous than those in the crystals grown by conventional CZ and/or MCZ growth. This new crystal-growth method can be easily adopted for growing large-diameter silicon crystals.

Production of Solar Grade (SoG) Silicon by Refining Liquid Metallurgical Grade (MG) Silicon: Final Report, 19 April 2001; FINAL

International Nuclear Information System (INIS)

Khattack, C. P.; Joyce, D. B.; Schmid, F.

2001-01-01

This report summarizes the results of the developed technology for producing SoG silicon by upgrading MG silicon with a cost goal of$20/kg in large-scale production. A Heat Exchanger Method (HEM) furnace originally designed to produce multicrystalline ingots was modified to refine molten MG silicon feedstock prior to directional solidification. Based on theoretical calculations, simple processing techniques, such as gas blowing through the melt, reaction with moisture, and slagging have been used to remove B from molten MG silicon. The charge size was scaled up from 1 kg to 300 kg in incremental steps and effective refining was achieved. After the refining parameters were established, improvements to increase the impurity reduction rates were emphasized. With this approach, 50 kg of commercially available as-received MG silicon was processed for a refining time of about 13 hours. A half life of and lt;2 hours was achieved, and the B concentration was reduced to 0.3 ppma and P concentration to 10 ppma from the original values of 20 to 60 ppma, and all other impurities to and lt;0.1 ppma. Achieving and lt;1 ppma B by this simple refining technique is a breakthrough towards the goal of achieving low-cost SoG silicon for PV applications. While the P reduction process was being optimized, the successful B reduction process was applied to a category of electronics industry silicon scrap previously unacceptable for PV feedstock use because of its high B content (50-400 ppma). This material after refining showed that its B content was reduced by several orders of magnitude, to(approx)1 ppma (0.4 ohm-cm, or about 5x1016 cm-3). NREL's Silicon Materials Research team grew and wafered small and lt;100 and gt; dislocation-free Czochralski (Cz) crystals from the new feedstock material for diagnostic tests of electrical properties, C and O impurity levels, and PV performance relative to similar crystals grown from EG feedstock and commercial Cz wafers. The PV conversion

Structural relaxation of Ni-Si-B amorphous ribbon

NARCIS (Netherlands)

Jurikova, A.; Csach, K.; Miskuf, J.; Ocelik, V.

The structural relaxation of the Ni-Si-B amorphous ribbon was studied by means of differential scanning calorimetry and thermomechanical analysis. It was shown that considerable length changes associated with reversible structural relaxation were revealed after a previous creep applied at higher

The role of extra-atomic relaxation in determining Si2p binding energy shifts at silicon/silicon oxide interfaces

International Nuclear Information System (INIS)

Zhang, K.Z.; Greeley, J.N.; Banaszak Holl, M.M.; McFeely, F.R.

1997-01-01

The observed binding energy shift for silicon oxide films grown on crystalline silicon varies as a function of film thickness. The physical basis of this shift has previously been ascribed to a variety of initial state effects (Si endash O ring size, strain, stoichiometry, and crystallinity), final state effects (a variety of screening mechanisms), and extrinsic effects (charging). By constructing a structurally homogeneous silicon oxide film on silicon, initial state effects have been minimized and the magnitude of final state stabilization as a function of film thickness has been directly measured. In addition, questions regarding the charging of thin silicon oxide films on silicon have been addressed. From these studies, it is concluded that initial state effects play a negligible role in the thickness-dependent binding energy shift. For the first ∼30 Angstrom of oxide film, the thickness-dependent binding energy shift can be attributed to final state effects in the form of image charge induced stabilization. Beyond about 30 Angstrom, charging of the film occurs. copyright 1997 American Institute of Physics

Variation of boron concentration in metallic glass ribbons

International Nuclear Information System (INIS)

Nagy, A.Z.; Vasvari, B.; Duwez, P.; Bakos, L.; Seres, Z.; Bogancs, J.; Nazarov, V.M.

1979-12-01

The surface boron concentration of Fe 40 Ni 40 P 14 B 6 , Fe 32 Ni 36 Cr 14 P 12 B 6 and Fe 40 Ni 40 B 20 metallic glasses was measured by neutron activation analysis on both sides of the ribbon samples. It was found that the boron concentration is always higher at the bright side of the ribbon than that at the dull side which is in contact with the cold surface of the wheel during the rapid quenching from the melt. A possible explanation is given in terms of the solid-liquid interface moving rapidly from the cooled surface to the free surface when preparing the samples. Range values of alpha-particles for some characteristic compositions of metallic glasses are tabulated. A mathematical technique for the deconvolution of experimental data is described and the listing of the Fortran program is enclosed. (author)

Radiation damage in lithium-counterdoped N/P silicon solar cells

Science.gov (United States)

Hermann, A. M.; Swartz, C. K.; Brandhorst, H. W., Jr.; Weinberg, I.

1980-01-01

The radiation resistance and low-temperature annealing properties of lithium-counterdoped n(+)-p silicon solar cells are investigated. Cells fabricated from float zone and Czochralski grown silicon were irradiated with 1 MeV electrons and their performance compared to that of 0.35 ohm-cm control cells. The float zone cells demonstrated superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Annealing kinetics were found to lie between first and second order for relatively short times, and the most likely annealing mechanism was found to be the diffusion of lithium to defects with the subsequent neutralization of defects by combination with lithium. Cells with zero lithium gradients exhibited the best radiation resistance.

Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion

International Nuclear Information System (INIS)

Casse, G.; Glaser, M.; Lemeilleur, F.; Ruzin, A.; Wegrzecki, M.

1999-01-01

The tolerance of silicon detectors to hadron irradiation can be improved by the introduction of a high concentration of oxygen into the starting material. High-resistivity Floating-Zone (FZ) silicon is required for detectors used in particle physics applications. A significantly high oxygen concentration (>10 17 atoms cm -3 ) cannot readily be achieved during the FZ silicon refinement. The diffusion of oxygen at elevated temperatures from a SiO 2 layer grown on both sides of a silicon wafer is a simple and effective technique to achieve high and uniform concentrations of oxygen throughout the bulk of a 300 μm thick silicon wafer

Magnetocaloric properties of rapidly solidified Dy{sub 3}Co alloy ribbons

Energy Technology Data Exchange (ETDEWEB)

Sánchez Llamazares, J. L., E-mail: jose.sanchez@ipicyt.edu.mx; Flores-Zúñiga, H.; Sánchez-Valdés, C. F. [Instituto Potosino de Investigación Científica y Tecnológica A.C., Camino a la Presa San José 2055 Col. Lomas 4" a, San Luis Potosí, S.L.P. 78216 (Mexico); Álvarez-Alonso, Pablo [Departamento de Electricidad y Electrónica, UPV/EHU, 48940 Leioa (Spain); Lara Rodríguez, G. A. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito Exterior s/n, Ciudad Universitaria, México, D. F. 04510 (Mexico); Fernández-Gubieda, M. L. [Departamento de Electricidad y Electrónica, UPV/EHU, 48940 Leioa (Spain); BC Materials, Camino de Ibaizabal, Edificio 500, Planta 1, Parque Científico y Tecnológico de Zamudio, 48160 Derio (Spain)

2015-05-07

The magnetic and magnetocaloric (MC) properties of melt-spun ribbons of the Dy{sub 3}Co intermetallic compound were investigated. Samples were fabricated in an Ar environment using a homemade melt spinner system at a linear speed of the rotating copper wheel of 40 ms{sup −1}. X-ray diffraction analysis shows that ribbons crystallize into a single-phase with the Fe{sub 3}C-type orthorhombic crystal structure. The M(T) curve measured at 5 mT reveals the occurrence of a transition at 32 K from a first to a second antiferromagnetic (AFM) state and an AFM-to-paramagnetic transition at T{sub N} = 43 K. Furthermore, a metamagnetic transition is observed below T{sub N}, but the magnetization change ΔM is well below the one reported for bulk alloys. Below 12 K, large inverse MC effect and hysteresis losses are observed. This behavior is related to the metamagnetic transition. For a magnetic field change of 5 T (2 T) applied along the ribbon length, the produced ribbons show a peak value of the magnetic entropy change ΔS{sub M}{sup peak} of −6.5 (− 2.1) Jkg{sup −1}K{sup −1} occurring close to T{sub N} with a full-width at half-maximum δT{sub FWHM} of 53 (37) K, and refrigerant capacity RC = 364 (83) Jkg{sup −1} (estimated from the product |ΔS{sub M}{sup peak}| × δT{sub FWHM})

Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

Directory of Open Access Journals (Sweden)

Akarapu Ashok

2014-01-01

Full Text Available Silicon dioxide (SiO2 thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs and microelectromechanical systems (MEMS. Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics.

Resistivity distribution of silicon single crystals using codoping

Science.gov (United States)

Wang, Jong Hoe

2005-07-01

Numerous studies including continuous Czochralski method and double crucible technique have been reported on the control of macroscopic axial resistivity distribution in bulk crystal growth. The simple codoping method for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. Wang [J. Crystal Growth 275 (2005) e73] demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in melt growth of silicon crystals and relatively uniform profile is possible by B-P codoping method. In this work, the basic characteristic of 8 in silicon single crystal grown using codoping method is studied and whether proposed method has advantage for the silicon crystal growth is discussed.

Simultaneous electron-proton irradiation of crucible grown and float-zone silicon solar cells

International Nuclear Information System (INIS)

Bernard, J.

1974-01-01

The realisation of an irradiation chamber which permits simultaneous irradiations by electrons, protons, photons and in-situ measurements of solar cells main parameters (diffusion length, I.V. characteristics) is described. Results obtained on 20 solar cells n/p 10Ωcm made in silicon pulled crystals and 20 solar cells n/p 10Ωcm made in silicon float-zone simultaneously irradiated with electrons and photons are given [fr

Test results of Nb3Sn ribbons for the Princeton D coil test program

International Nuclear Information System (INIS)

Kaugerts, J.; File, J.; Willard, J.W.

1974-10-01

A previously described D coil test program was modified. Details of a smaller Nb 3 Sn D coil test program are described. Cusp coil tests were made with several Nb 3 Sn composite ribbons. Measurements of both the quench and recovery currents as a function of magnetic field component perpendicular to the wide edge of the ribbon are presented. (auth)

Laser induced local structural and property modifications in semiconductors for electronic and photonic superstructures - Silicon carbide to graphene conversion

Science.gov (United States)

Yue, Naili

Graphene is a single atomic layer two-dimensional (2D) hexagonal crystal of carbon atoms with sp2-bonding. Because of its various special or unique properties, graphene has attracted huge attention and considerable interest in recent years. This PhD research work focuses on the development of a novel approach to fabricating graphene micro- and nano-structures using a 532 nm Nd:YAG laser, a technique based on local conversion of 3C-SiC thin film into graphene. Different from other reported laser-induced graphene on single crystalline 4H- or 6H- SiC, this study focus on 3C-SiC polycrystal film grown using MBE. Because the SiC thin film is grown on silicon wafer, this approach may potentially lead to various new technologies that are compatible with those of Si microelectronics for fabricating graphene-based electronic, optoelectronic, and photonic devices. The growth conditions for depositing 3C-SiC using MBE on Si wafers with three orientations, (100), (110), and (111), were evaluated and explored. The surface morphology and crystalline structure of 3C-SiC epilayer were investigated with SEM, AFM, XRD, μ-Raman, and TEM. The laser modification process to convert 3C-SiC into graphene layers has been developed and optimized by studying the quality dependence of the graphene layers on incident power, irradiation time, and surface morphology of the SiC film. The laser and power density used in this study which focused on thin film SiC was compared with those used in other related research works which focused on bulk SiC. The laser-induced graphene was characterized with μ-Raman, SEM/EDS, TEM, AFM, and, I-V curve tracer. Selective deposition of 3C-SiC thin film on patterned Si substrate with SiO2 as deposition mask has been demonstrated, which may allow the realization of graphene nanostructures (e.g., dots and ribbons) smaller than the diffraction limit spot size of the laser beam, down to the order of 100 nm. The electrical conductance of directly written graphene

Characterisation of melt spun Ni-Ti shape memory Ribbons' microstructure

Science.gov (United States)

Mehrabi, Kambiz; Brunčko, Mihael; Kneissl, Albert C.; Čolič, Miodrag; Stamenković, Dragoslav; Ferčec, Janko; Anžel, Ivan; Rudolf, Rebeka

2012-06-01

NiTi alloys are the most technologically important medical Shape Memory Alloys in a wide range of applications used in Orthopaedics, Neurology, Cardiology and interventional Radiology as guide-wires, self-expandable stents, stent grafts, inferior vena cava filters and clinical instruments. This paper discusses the use of rapid solidification by the melt spinning method for the preparation of thin NiTi ribbons for medical uses. Generally, the application of rapid solidification via melt-spinning can change the microstructure drastically, which improves ductility and shape memory characteristics and leads to samples with small dimensions. As the increase in the wheel speed led to a reduced ribbon thickness, the cooling rate increased and, therefore, the martensitic substructure became finer. Furthermore, no transition from the crystalline phase to the amorphous phase was obtained by increasing the cooling rate, even at a wheel speed of 30 m/s. Specimens for our metallographic investigation were cut from the longitudinal cross sections of melt-spun ribbons. Conventional TEM studies were carried out with an acceleration voltage of 120 kV. Additionally, the chemical composition of the samples was examined with a TEM equipped with an EDX analyser. The crystallographic structure was determined using Bragg-Brentano x-ray diffraction with Cu-Kα radiation at room temperature.

Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

2008-08-15

The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

Transverse magnetization and giant magnetoimpedance in amorphous ribbons

International Nuclear Information System (INIS)

Orue, I.; Garcia-Arribas, A.; Saad, A.; Cos, D. de; Barandiaran, J.M.

2005-01-01

In the classical approach giant magnetoimpedance (GMI) is driven by the transverse permeability of the sample, as excited by the current flowing through it. Transverse permeability is usually taken as a constant, while detailed magnetization processes are important for the interpretation of GMI data. In most cases the transverse permeability (or magnetization) is only guessed by looking at the longitudinal magnetization curve and direct determinations of such parameter are scarce in the literature. In this work we report on the operation of a simple setup which provides the transverse magnetization of amorphous ribbons as a function of the current intensity flowing through it, by means of the magnetooptical kerr effect (MOKE). The system has been tested on low magnetostriction amorphous ribbons of very soft character with both longitudinal and transverse anisotropy. The transverse magnetization as a function of both the current and a DC longitudinal field applied, was compared with magneto impedance measurements

Adsorption of triazine herbicides from aqueous solution by functionalized multiwall carbon nanotubes grown on silicon substrate

Science.gov (United States)

D'Archivio, Angelo Antonio; Maggi, Maria Anna; Odoardi, Antonella; Santucci, Sandro; Passacantando, Maurizio

2018-02-01

Multi-walled carbon nanotubes (MWCNTs), because of their small size and large available surface area, are potentially efficient sorbents for the extraction of water solutes. Dispersion of MWCNTs in aqueous medium is suitable to adsorb organic contaminants from small sample volumes, but, the recovery of the suspended sorbent for successive re-use represents a critical step, which makes this method inapplicable in large-scale water-treatment technologies. To overcome this problem, we proposed here MWCNTs grown on silicon supports and investigated on a small-volume scale their adsorption properties towards triazine herbicides dissolved in water. The adsorption efficiency of the supported MWCNTs has been tested on seven triazine herbicides, which are emerging water contaminants in Europe and USA, because of their massive use, persistence in soils and potential risks for the aquatic organisms and human health. The investigated compounds, in spite of their common molecular skeleton, cover a relatively large property range in terms of both solubility in water and hydrophilicity/hydrophobicity. The functionalisation of MWCNTs carried out by acidic oxidation, apart from increasing wettability of the material, results in a better adsorption performance. Increasing of functionalisation time between 17 and 60 h progressively increases the extraction of all seven pesticides and produces a moderate increment of selectivity.

Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Ramon M. delos Santos

2008-06-01

Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

Microspheres for the Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism

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Arancha Gómez-Martínez

2014-01-01

Full Text Available Silicon nanowires have been synthesized by a simple process using a suitable support containing silica and carbon microspheres. Nanowires were grown by thermal chemical vapor deposition via a vapor-liquid-solid mechanism with only the substrate as silicon source. The curved surface of the microsized spheres allows arranging the gold catalyst as nanoparticles with appropriate dimensions to catalyze the growth of nanowires. The resulting material is composed of the microspheres with the silicon nanowires attached on their surface.

Magnetoimpedance studies on urine treated Co{sub 66}Ni{sub 7}Si{sub 7}B{sub 20} ribbons

Energy Technology Data Exchange (ETDEWEB)

Kotagiri, Ganesh [Advanced Magnetic Materials Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Markandeyulu, G., E-mail: mark@iitm.ac.in [Advanced Magnetic Materials Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Doble, Mukesh; Nandakumar, V. [Department of Biotechnology, Indian Institute of Technology Madras, Chennai 600036 (India)

2015-11-15

Magnetoimpedance (MI) response of Co{sub 66}Ni{sub 7}Si{sub 7}B{sub 20} ribbons treated with artificial urine with protein bovine serum albumin (BSA), artificial urine without protein BSA and healthy male urine was studied as a function of time of incubation. The maximum MI [(MI){sub m}] values of the ribbons treated with artificial urine without protein (RTAU) after 3 h, 6 h, 12 h and 24 h of incubation are 30% (at 4 MHz), 15% (at 5 MHz), 14% (at 10 MHz) and 8% (at 13 MHz) respectively. On the other hand, the respective (MI){sub m} values of the ribbons treated with artificial urine with protein (RTAUP) are 33% (at 4 MHz), 25% (at 5 MHz), 20% (at 8 MHz) and 15% (12 MHz). However (MI){sub m} values of the ribbons treated with healthy male urine (RTHMU) after 4 h, 5 h, 10 h and 15 h of incubation are 71% (at 3 MHz), 57% (at 3 MHz), 25% (at 6 MHz) and 25% (at 5 MHz), respectively. The saturation magnetization (M{sub s}) values of RTAU after 3 h, 6 h, 12 h and 24 h of incubation are 71 emu/g, 65 emu/g, 63 emu/g and 60 emu/g respectively whereas, the respective M{sub s} values of RTAUP are 73 emu/g, 69 emu/g, 67 emu/g and 64 emu/g. The M{sub s} values of RTHMU after 4 h, 5 h, 10 h and 15 h of incubation are 96 emu/g, 90 emu/g, 75 emu/g and 75 emu/g respectively. The decrease in M{sub s} and (MI){sub m} values in RTAU and RTAUP compared to as-quenched ribbon is related to the amounts of various elements etched out from the ribbons and increased surface roughness. The M{sub s} and (MI){sub m} values of RTHMU are seen to have increased after 4 h and 5 h of incubation, due to strain relaxation through removal of strain developed during rapid quenching of the ribbons. On the other hand, the M{sub s} and (MI){sub m} values of RTHMU after 10 h and 15 h have decreased due to deterioration of the surface of the ribbons and thus, increase in magnetic (surface) anisotropy. The decrease in (MI){sub m} and M{sub S} of RTAU with the time of incubation are more rapid compared to that

Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

Science.gov (United States)

Kelly, David Quest

After the integrated circuit was invented in 1959, complementary metal-oxide-semiconductor (CMOS) technology soon became the mainstay of the semiconductor industry. Silicon-based CMOS has dominated logic technologies for decades. During this time, chip performance has grown at an exponential rate at the cost of higher power consumption and increased process complexity. The performance gains have been made possible through scaling down circuit dimensions by improvements in lithography capabilities. Since scaling cannot continue forever, researchers have vigorously pursued new ways of improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs) without having to shrink gate lengths and reduce the gate insulator thickness. Strained silicon, with its ability to boost transistor current by improving the channel mobility, is one of the methods that has already found its way into production. Although not yet in production, high-kappa dielectrics have also drawn wide interest in industry since they allow for the reduction of the electrical oxide thickness of the gate stack without having to reduce the physical thickness of the dielectric. Further out on the horizon is the incorporation of high-mobility materials such as germanium (Ge), silicon-germanium (Si1-xGe x), and the III-V semiconductors. Among the high-mobility materials, Ge has drawn the most attention because it has been shown to be compatible with high-kappa dielectrics and to produce high drive currents compared to Si. Among the most difficult challenges for integrating Ge on Si is finding a suitable method for reducing the number of crystal defects. The use of strain-relaxed Si1- xGex buffers has proven successful for reducing the threading dislocation density in Ge epitaxial layers, but questions remain as to the viability of this method in terms of cost and process complexity. This dissertation presents research on thin germanium-carbon (Ge 1-yCy layers on Si for the fabrication

Suppressing segregation in highly phosphorus doped silicon monolayers

NARCIS (Netherlands)

Keizer, Joris; Kölling, Sebastian; Koenraad, Paul; Simmons, Michelle Y.

2015-01-01

Sharply defined dopant profiles and low resistivity are highly desired qualities in the microelectronic industry, and more recently, in the development of an all epitaxial Si:P based quantum computer. In this work, we use thin (monolayers thick) room temperature grown silicon layers, so-called

Compositional analysis of silicon oxide/silicon nitride thin films

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Meziani Samir

2016-06-01

Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

Fin Ray Stiffness and Fin Morphology Control Ribbon-Fin-Based Propulsion.

Science.gov (United States)

Liu, Hanlin; Taylor, Bevan; Curet, Oscar M

2017-06-01

Ribbon-fin-based propulsion has rich locomotor capabilities that can enhance the mobility and performance of underwater vehicles navigating in complex environments. Bony fishes using this type of propulsion send one or multiple traveling waves along an elongated fin with the actuation of highly flexible rays that are interconnected by an elastic membrane. In this work, we study how the use of flexible rays and different morphology can affect the performance of ribbon-fin propulsion. We developed a physical model composed of 15 rays that are interconnected with an elastic membrane. We tested four different ray flexural stiffness and four aspect ratios. The robotic model was tested in a low-turbulence flume under two flow conditions ([Formula: see text] wavelength/s). In two experimental sets, we measured fin kinematics, net surge forces, and power consumption. Using these data, we perform a thrust and power analysis of the undulating fin. We present the thrust coefficient, power coefficient, and propulsive efficiency. We find that the thrust generation was linear with the enclosed area swept by the fin, and square of the relative velocity between the incoming flow and traveling wave. The thrust coefficient levels off around 0.5. In addition, for our parameter range, we find that the power consumption scales by the cube of the effective tangential velocity of the rays [Formula: see text] (A is the amplitude of the ray oscillating motion, and [Formula: see text] is the angular velocity). We show that a decay in stiffness decreases both thrust production and power consumption. However, for rays with high flexural stiffness, the difference in thrust compared with rigid rays is minimal. Moreover, our results show that flexible rays can improve the propulsive efficiency compared with a rigid counterpart. Finally, we find that the morphology of ribbon fin affects its propulsive efficiency. For the aspect ratio considered in our experiments, [Formula: see text] was the most

Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

International Nuclear Information System (INIS)

Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

2015-01-01

Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

Nanocrystallization in Co67Cr7Fe4Si8B14 Amorphous Alloy Ribbons

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Zahra Jamili-Shirvan

2013-12-01

Full Text Available The nanocrystallization of Co67Fe4Cr7Si8B14 amorphous ribbons which prepared by planar flow melt spinning process (PFMS was investigated. Crystallization of the ribbons was studied by differential thermal analysis (DTA, X-ray diffraction (XRD and transmission electron microscopy (TEM. The DTA result of amorphous ribbon at heating rate of 10˚C/min showedoccurrence of phase transitions in two stages. The ribbons were isothermally annealed for 30 minutes in argon atmosphere at different temperatures between 300 and 650ºC with 25ºC steps. The magnetic properties of annealed samples were measured using a vibrating sample magnetometer (VSM. The VSM results revealed that optimum soft magnetic properties occurred at 400ºC. XRD patterns showed that the samples isothermally annealed up to 450ºC were amorphous, while TEM results at 400ºC indicated 7-8 nm mean size nanocrytallites in amorphous matrix and size of the nanocrystallites increased by increasing temperature. Also by X-ray diffraction pattern, precipitation of different phases at higher temperatures confirmed.

Overexpression of guanylate cyclase activating protein 2 in rod photoreceptors in vivo leads to morphological changes at the synaptic ribbon.

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Natalia López-del Hoyo

Full Text Available Guanylate cyclase activating proteins are EF-hand containing proteins that confer calcium sensitivity to retinal guanylate cyclase at the outer segment discs of photoreceptor cells. By making the rate of cGMP synthesis dependent on the free intracellular calcium levels set by illumination, GCAPs play a fundamental role in the recovery of the light response and light adaptation. The main isoforms GCAP1 and GCAP2 also localize to the synaptic terminal, where their function is not known. Based on the reported interaction of GCAP2 with Ribeye, the major component of synaptic ribbons, it was proposed that GCAP2 could mediate the synaptic ribbon dynamic changes that happen in response to light. We here present a thorough ultrastructural analysis of rod synaptic terminals in loss-of-function (GCAP1/GCAP2 double knockout and gain-of-function (transgenic overexpression mouse models of GCAP2. Rod synaptic ribbons in GCAPs-/- mice did not differ from wildtype ribbons when mice were raised in constant darkness, indicating that GCAPs are not required for ribbon early assembly or maturation. Transgenic overexpression of GCAP2 in rods led to a shortening of synaptic ribbons, and to a higher than normal percentage of club-shaped and spherical ribbon morphologies. Restoration of GCAP2 expression in the GCAPs-/- background (GCAP2 expression in the absence of endogenous GCAP1 had the striking result of shortening ribbon length to a much higher degree than overexpression of GCAP2 in the wildtype background, as well as reducing the thickness of the outer plexiform layer without affecting the number of rod photoreceptor cells. These results indicate that preservation of the GCAP1 to GCAP2 relative levels is relevant for maintaining the integrity of the synaptic terminal. Our demonstration of GCAP2 immunolocalization at synaptic ribbons at the ultrastructural level would support a role of GCAPs at mediating the effect of light on morphological remodeling changes of

Third nearest neighbor parameterized tight binding model for graphene nano-ribbons

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Van-Truong Tran

2017-07-01

Full Text Available The existing tight binding models can very well reproduce the ab initio band structure of a 2D graphene sheet. For graphene nano-ribbons (GNRs, the current sets of tight binding parameters can successfully describe the semi-conducting behavior of all armchair GNRs. However, they are still failing in reproducing accurately the slope of the bands that is directly associated with the group velocity and the effective mass of electrons. In this work, both density functional theory and tight binding calculations were performed and a new set of tight binding parameters up to the third nearest neighbors including overlap terms is introduced. The results obtained with this model offer excellent agreement with the predictions of the density functional theory in most cases of ribbon structures, even in the high-energy region. Moreover, this set can induce electron-hole asymmetry as manifested in results from density functional theory. Relevant outcomes are also achieved for armchair ribbons of various widths as well as for zigzag structures, thus opening a route for multi-scale atomistic simulation of large systems that cannot be considered using density functional theory.

Scanning/friction force microscopy study of YBa2Cu3O7-δ single crystals grown in BaZrO3 crucibles

International Nuclear Information System (INIS)

Lang, H.P.; Jess, P.; Hubler, U.

1996-01-01

Very pure YBa 2 Cu 3 O 7-δ (YBCO) single crystals grown in BaZrO 3 crucibles are studied in the as-grown and the oxidized state by scanning force (SFM), friction force (FFM) and scanning tunneling microscopies (STM). The images show clean terraces with step-heights of one unit cell along YBCO(001), i.e. 1.2 nm. Only close to step edges is material contrast observed by FFM indicating traces of flux. Some crystal surfaces exhibit over-layer features, such as star-like, ribbon-like and checkerboard-like structures, which exhibit friction contrast implying the presence of different materials on the surface. Tunneling spectroscopy at 4-7 K in high vacuum reveals a superconducting energy gap of 2Δ ∼ 26 meV

Development of variable width ribbon heating elements for liquid metal and gas-cooled fast breeder reactor fuel rod simulators

International Nuclear Information System (INIS)

McCulloch, R.W.; Lovell, R.T.; Post, D.W.; Snyder, S.D.

1980-01-01

Variable width ribbon heating elements have been fabricated which provide a chopped cosine, variable heat flux profile for fuel rod simulators used in test loops by the Breeder Reactor Program Thermal Hydraulic Out-of-Reactor Safety test facility and the Gas-Cooled Fast Breeder Reactor Core Flow Test Loop. Thermal, mechanical, and electrical design considerations result in the derivation of an analytical expression for the ribbon contours. From this, the ribbons are machined and wound on numerically controlled equipment. Postprocessing and inspection results in a wound, variable width ribbon with the precise dimensional, electrical, and mechanical properties needed for use in fuel pin simulators

Key Success Factors and Future Perspective of Silicon-Based Solar Cells

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S. Binetti

2013-01-01

Full Text Available Today, after more than 70 years of continued progress on silicon technology, about 85% of cumulative installed photovolatic (PV modules are based on crystalline silicon (c-Si. PV devices based on silicon are the most common solar cells currently being produced, and it is mainly due to silicon technology that the PV has grown by 40% per year over the last decade. An additional step in the silicon solar cell development is ongoing, and it is related to a further efficiency improvement through defect control, device optimization, surface modification, and nanotechnology approaches. This paper attempts to briefly review the most important advances and current technologies used to produce crystalline silicon solar devices and in the meantime the most challenging and promising strategies acting to increase the efficiency to cost/ratio of silicon solar cells. Eventually, the impact and the potentiality of using a nanotechnology approach in a silicon-based solar cell are also described.

Microstructure evolution in the rapidly quenched Fe{sub 78}Si{sub 9}B{sub 13} ribbons

Energy Technology Data Exchange (ETDEWEB)

Wang, W.-M., E-mail: weiminw@sdu.edu.c [Key Lab of Liquid Structure and Heredity of Materials, Shandong University, Jinan 250061 (China); Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Jin, S.F. [Key Lab of Liquid Structure and Heredity of Materials, Shandong University, Jinan 250061 (China); Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Zhang, J.T.; Huang, T.; Wang, L.; Bian, X.F. [Key Lab of Liquid Structure and Heredity of Materials, Shandong University, Jinan 250061 (China)

2009-11-01

We report microstructure evolution in as-spun Fe{sub 78}Si{sub 9}B{sub 13} ribbons under various wheel speeds (s), which was investigated by X-ray diffraction (XRD), differential scanning calorimetry (DSC), and transmission electron microscopy (TEM). With decreasing s, the volume fraction of the residual amorphous phase (V{sub a}) in the as-spun ribbons decreases gradually, and the total exothermic heat of the crystallization in the DSC curves also decreases, but the ratio of the exothermic heat of the second crystallization to the first one is on the contrary. alpha-Fe is found in the ribbon with s of 32.9 m/s, while alpha-Fe, eutectic alpha-Fe+Fe{sub 2}B, and Fe{sub 3}Si phases are found in ribbons with s of 25.6 and 18.3 m/s. The phase precipitating behavior in cooling processes is well consistent with the annealing process in the literatures.

Characterization of consolidated rapidly solidified Cu-Nb ribbons

International Nuclear Information System (INIS)

Ebrahimi, F.; Henne, M.L.C.

1997-01-01

Copper-niobium ribbons produced by melt-spinning were compacted by swaging and consolidated using HIPping. Final processing to obtain in-situ composites was done by swaging. The strength of the composite is discussed in terms of the composition and morphology of the niobium phase as evaluated using electron microscopy techniques

Study program to develop and evaluate die and container materials for the growth of silicon ribbons. [for development of low cost solar cells

Science.gov (United States)

Addington, L. A.; Ownby, P. D.; Yu, B. B.; Barsoum, M. W.; Romero, H. V.; Zealer, B. G.

1979-01-01

The development and evaluation of proprietary coatings of pure silicon carbide, silicon nitride, and aluminum nitride on less pure hot pressed substrates of the respective ceramic materials, is described. Silicon sessile drop experiments were performed on coated test specimens under controlled oxygen partial pressure. Prior to testing, X-ray diffraction and SEM characterization was performed. The reaction interfaces were characterized after testing with optical and scanning electron microscopy and Auger electron spectroscopy. Increasing the oxygen partial pressure was found to increase the molten silicon contact angle, apparently because adsorbed oxygen lowers the solid-vapor interfacial free energy. It was also found that adsorbed oxygen increased the degree of attack of molten silicon upon the chemical vapor deposited coatings. Cost projections show that reasonably priced, coated, molten silicon resistant refractory material shapes are obtainable.

Long-range ferromagnetism and magnetocaloric effects in rapidly quenched Ni50−xCoxMn50−yAly ribbons

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Nguyen Thi Mai

2017-03-01

Full Text Available Ni50−xCoxMn50−yAly (x = 7 and 9; y = 17, 18 and 19 alloy ribbons were prepared by melt-spinning with a tangential velocity of copper wheel of 40 m s−1. X-ray diffraction patterns reveal multi-crystalline phase behavior in the fabricated ribbons. The shape of thermomagnetization curves clearly depends on Co and Al concentrations. The Curie temperatures (TC of the alloy ribbons strongly increase with increasing the Co concentration and slightly decrease with increasing the Al concentration. The martensitic-austenitic phase transition in the alloy ribbons can be manipulated by tuning Co and Al concentrations. The maximum magnetic entropy change |ΔSm|max of about 0.75 J kg−1 K−1 for a field change of 12 kOe at TC ≈ 364 K was achieved for the Ni43Co7Mn32Al18 ribbon. Critical analysis using the Arrott-Noaks and Kouvel–Fisher methods demonstrates the existence of a long-range ferromagnetic order in this ribbon.

Effects of pre-deformation on the martensitic transformation and magnetocaloric property in Ni-Mn-Co-Sn ribbons

International Nuclear Information System (INIS)

Ma Sheng-Can; Xuan Hai-Cheng; Zhang Cheng-Liang; Wang Liao-Yu; Cao Qing-Qi; Wang Dun-Hui; Du You-Wei

2010-01-01

This paper investigates the martensitic transformation and magnetocaloric effect in pre-deformed Ni-Mn-Co-Sn ribbons. The experimental results show that the reverse martensitic transformation temperature T M increases with the increasing pre-pressure, suggesting that pre-deformation is another effective way to adjust T M in ferromagnetic shape memory alloys. Large magnetic entropy changes and refrigerant capacities are obtained in these ribbons as well. It also discusses the origin of the enhanced martensitic transformation temperature and magnetocaloric property in pre-deformed Ni-Mn-Co-Sn ribbons

Universal method for opnimal design main structural assemblies of steel structures stationary conveyor with hanging ribbon

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Boslovyak P.V.

2015-10-01

Full Text Available The technique and the detailed algorithm for optimal design of steel structures hospitaltion of the conveyor with hang-ing ribbon. Developed a universal objective function together with the system-limited-subject to limits of main components of steel structures of stationary conveyor with hanging ribbon.

Application of plasma silicon nitride to crystalline thin-film silicon solar cells. Paper

Energy Technology Data Exchange (ETDEWEB)

Schmidt, J.; Oberbeck, L.; Rinke, T.J.; Berge, C.; Bergmann, R.B.

2002-07-01

We use plasma-enhanced chemical vapour deposition to deposit silicon nitride (SiN{sub x}) films at low temperature(400 C) onto the front surface of two different types of crystalline thin-film Si solar cells. The silicon nitride acts as an excellent antireflection coating on Si and provides a very high degree of electronic surface passivation over a wide range of compositions, including near-stoichiometric and Si-rich SiN{sub x}. Application of stoichiometric SiN{sub x} to non-textured thin-film cells, epitaxially grown at low temperature by ion-assisted deposition onto a monocrystalline Si substrate, results in an open-circuit voltage of 622 mV, a short-circuit current density of 26.6 mA/cm{sup 2} and an efficiency of 12.7%. It is shown that the SiN{sub x}-passivated in-situ grown n{sup +}-emitter of this cell type allows to reach open-circuit voltages of up to 667 mV. Silicon-rich SiN{sub x} is applied to the phosphorus-diffused n{sup +}-emitter of a textured thin-film cell on a glass superstrate fabricated by layer-transfer. The emitter saturation current density of these cells is only 40-64 fA/cm{sup 2}, which allows for open-circuit voltages of up to 699 mV. An impressively high open-circuit voltage of 638 mV and a short-circuit current density of 32.0 mA/cm{sup 2} are obtained for a 25 {mu}m thick SiN{sub x}-passivated, random pyramid-textured transfer cell. A transfer cell efficiency of 15.3% is independently confirmed.

Structural and Electrical Properties Characterization of Sb1.52Bi0.48Te3.0 Melt-Spun Ribbons

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Viktoriia Ohorodniichuk

2017-06-01

Full Text Available Melt-spinning (MS has been reported as a promising tool to tailor the microstructure of bulk thermoelectric materials leading to enhanced thermoelectric performances. Here, we report on a detailed characterization of p-type Bi0.48Sb1.52Te3 ribbons produced by melt-spinning. The microstructure of the melt-spun ribbons has been studied by means of X-ray diffraction, scanning and transmission electron microscopy (TEM. The analyses indicate that the ribbons are highly-textured with a very good chemical homogeneity. TEM reveals clear differences in the microstructure at large and short-range scales between the surface that was in contact with the copper wheel and the free surface. These analyses further evidence the absence of amorphous regions in the melt-spun ribbons and the precipitation of elemental Te at the grain boundaries. Low-temperature electrical resistivity and thermopower measurements (20–300 K carried out on several randomly-selected ribbons confirm the excellent reproducibility of the MS process. However, the comparison of the transport properties of the ribbons with those of bulk polycrystalline samples of the same initial composition shows that MS leads to a more pronounced metallic character. This difference is likely tied to changes in deviations from stoichiometry due to the out-of-equilibrium conditions imposed by MS.

Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film

International Nuclear Information System (INIS)

Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

2015-01-01

Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices’ applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H 2 O 2 /HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing. (paper)

Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film.

Science.gov (United States)

Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

2015-04-17

Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices' applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H2O2/HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing.

The identification of a sensitizing component used in the manufacturing of an ink ribbon

Science.gov (United States)

Anderson, Stacey E.; Tapp, Loren; Durgam, Srinivas; Meade, B. Jean; Jackson, Laurel G.; Cohen, David E.

2015-01-01

Skin diseases including dermatitis constitute ≈ 30% of all occupational illnesses, with a high incidence in the printing industry. An outbreak of contact dermatitis among employees at an ink ribbon manufacturing plant was investigated by scientists from the National Institute for Occupational Safety and Health (NIOSH). Employees in the process areas of the plant were exposed to numerous chemicals and many had experienced skin rashes, especially after the introduction of a new ink ribbon product. To identify the causative agent(s) of the occupational dermatitis, the murine local lymph node assay (LLNA) was used to identify the potential of the chemicals used in the manufacture of the ink ribbon to induce allergic contact dermatitis. Follow-up patch testing with the suspected allergens was conducted on exposed employees. Polyvinyl butyral, a chemical component used in the manufacture of the ink ribbon in question and other products, tested positive in the LLNA, with an EC3 of 3.6%, which identifies it as a potential sensitizer; however, no employees tested positive to this chemical during skin patch testing. This finding has implications beyond those described in this report because of occupational exposure to polyvinyl butyral outside of the printing industry. PMID:22375946

The effects of surface modification on the electrical properties of p–n+ junction silicon nanowires grown by an aqueous electroless etching method

International Nuclear Information System (INIS)

Lee, Seulah; Koo, Ja Hoon; Seo, Jungmok; Kim, Sung-Dae; Lee, Kwang Hyun; Im, Seongil; Kim, Young-Woon; Lee, Taeyoon

2012-01-01

Although the aqueous electroless etching (AEE) method has received significant attention for the fabrication of silicon nanowires (SiNWs) due to its simplicity and effectiveness, SiNWs grown via the AEE method have a drawback in that their surface roughness is considerably high. Thus, we fabricated surface-modified p–n + junction SiNWs grown by AEE, wherein the surface roughness was reduced by a sequential processes of oxide growth using the rapid thermal oxidation (RTO) cycling process and oxide removal with a hydrofluoric acid solution. High-resolution transmission electron microscopy analysis confirmed that the surface roughness of the modified SiNWs was significantly decreased compared with that of the as-fabricated SiNWs. After RTO treatment, the wettability of the SiNWs had dramatically changed from superhydrophilic to superhydrophobic, which can be attributed to the formation of siloxane groups on the native oxide/SiNW surfaces and the effect of the nanoscale structure. Due to the enhancement in surface carrier mobility, the current density of the surface-modified p–n + junction SiNWs was approximately 6.3-fold greater than that of the as-fabricated sample at a forward bias of 4 V. Meanwhile, the photocurrent density of the surface-modified p–n + junction SiNWs was considerably decreased as a result of the decreases in the light absorption area, light absorption volume, and light scattering.

Catalytic oxidation of silicon by cesium ion bombardment

International Nuclear Information System (INIS)

Souzis, A.E.; Huang, H.; Carr, W.E.; Seidl, M.

1991-01-01

Results for room-temperature oxidation of silicon using cesium ion bombardment and low oxygen exposure are presented. Bombardment with cesium ions is shown to allow oxidation at O 2 pressures orders of magnitude smaller than with noble gas ion bombardment. Oxide layers of up to 30 A in thickness are grown with beam energies ranging from 20--2000 eV, O 2 pressures from 10 -9 to 10 -6 Torr, and total O 2 exposures of 10 0 to 10 4 L. Results are shown to be consistent with models indicating that initial oxidation of silicon is via dissociative chemisorption of O 2 , and that the low work function of the cesium- and oxygen-coated silicon plays the primary role in promoting the oxidation process

76 FR 38648 - Availability of the Geothermal Technologies Program Blue Ribbon Panel Report and Request for...

Science.gov (United States)

2011-07-01

....S. has lagged that of solar and wind energy. The purpose of the Blue Ribbon Panel meeting was to... Geothermal Technologies Program Blue Ribbon Panel Report and Request for Public Comment AGENCY: Office of... Panel (the Panel) on March 22/23, 2011 in Albuquerque, New Mexico for a guided discussion on the future...

Fish Marketing of Ribbon Fish (Trichiurus sp. in Nusantara Fishing Port (NFPat Palabuhanratu, West Java

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Nur Bambang Azis

2018-01-01

Full Text Available The objective of this research is to study the marketing process of ribbon fish (Trichiurus sp., including the marketing margin, marketing agencies, traders and marketing channels The research was carried out for 3 mo in Nusantara Fishing Port (NFP, Palabuhanratu, Sukabumi, West Java. A case study was used in this research. A purposive sampling method was used to collect data from 55 respondents of fish marketing, consisting of fishermen, agents, traders, and retailers, who were involved in the marketing of ribbon fish in NFP Palabuhanratu. The result of the research showed that ribbon fish production in Palabuhanratu fluctuated from year to year. There are two types of ribbon fish marketing, i.e. type one is from fishermen to retailers, and type two is indirect marketing from fisherman to consumers through intermediate traders (exporters. The greatest marketing margin was obtained from the first type, while the smallest marketing margin was obtained from type two. The form of the market was considered to be oligopsony market. Fisherman’s share is greatest in the collectors and the smallest share is on retailers. Marketing process in traders is efficient due to its lowest margin and highest fisherman’s share.

Effects of the ingot phase transition on microstructure and magnetic properties of CeNdFeB melt-spun ribbons

Energy Technology Data Exchange (ETDEWEB)

Wang, Xuchao [Division of Functional Materials Research, Central Iron and Steel Research Institute, Beijing 100081, China (China); College of Sciences, Northeastern University, Shenyang 110819 (China); Zhu, Minggang, E-mail: mgzhu@126.com [Division of Functional Materials Research, Central Iron and Steel Research Institute, Beijing 100081, China (China); Li, Wei; Zheng, Liyun; Guo, Zhaohui; Du, Xiao [Division of Functional Materials Research, Central Iron and Steel Research Institute, Beijing 100081, China (China); Du, An [College of Sciences, Northeastern University, Shenyang 110819 (China)

2015-11-01

The paper studies the phase transition of ingot with the composition (Ce{sub 50}Nd{sub 50}){sub 30}Fe{sub bal}Co{sub 4}Ga{sub 0.2}B{sub 0.92} after the annealing treatment at 1050 °C. The melt-spun ribbons which is prepared by the two treatment status ingots. The phase structure and microstructure morphologies of the ingots and melt-spun ribbons were analysed and observed by XRD and SEM. It was found that the grain size of the ribbons is on the nanometer scale. The EDS results show that there are four different phases in the ingot: (CeNd){sub 2}Fe{sub 14}B, α-Fe, Ce-rich phase and Nd-rich phase. After the annealing treatment, α-Fe, Ce-rich phase, and Nd-rich phase were obviously reduced and the contents of the main phase was significantly increased in the annealed ingot compared with the unanneal treatment ingot. The VSM results show that there is a peak waist in the ribbon which is prepared by the untreated ingot. Because the ingot is uneven, the ribbons may have the secondary phase, the Hcj is 8394 Oe. But the demagnetization curves of the ribbons, which is prepared by the annealed ingot, is relatively smooth and without the soft magnetic phase and the Hcj is 12,528 Oe, which is higher than the unanneal treatment ingot. We can know that the ingot with fine organization is the key factors to preparing high-performance ribbons.

The Effect of Creep on the Residual Stresses Generated During Silicon Sheet Growth

Science.gov (United States)

Hutchinson, J. W.; Lambropoulos, J. C.

1984-01-01

The modeling of stresses generated during the growth of thin silicon sheets at high speeds is an important part of the EFG technique since the experimental measurement of the stresses is difficult and prohibitive. The residual stresses which arise in such a growth process lead to serious problems which make thin Si ribbons unsuitable for fabrication. The constitutive behavior is unrealistic because at high temperature (close to the melting point) Si exhibits considerable creep which significantly relaxes the residual stresses. The effect of creep on the residual stresses generated during the growth of Si sheets at high speeds was addressed and the basic qualitative effect of creep are reported.

77 FR 32938 - Narrow Woven Ribbons With Woven Selvedge From Taiwan: Preliminary Results of Antidumping Duty...

Science.gov (United States)

2012-06-04

... ribbons subject to the order include all narrow woven fabrics, tapes, and labels that fall within this... the manufacture of typewriter or printer ribbons; (5) Narrow woven labels and apparel tapes, cut-to... 1994 U.S.C.C.A.N. 4040, 4198-99. Furthermore, ``affirmative evidence of bad faith on the part of a...

Improved field emission properties of carbon nanotubes grown on stainless steel substrate and its application in ionization gauge

Energy Technology Data Exchange (ETDEWEB)

Li, Detian; Cheng, Yongjun [Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000 (China); Wang, Yongjun, E-mail: wyjlxlz@163.com [Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000 (China); Zhang, Huzhong [Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000 (China); Dong, Changkun [Institute of Micro-Nano Structures and Optoelectronics, Wenzhou University, Wenzhou 325035 (China); Li, Da [Division of Advanced Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

2016-03-01

Graphical abstract: - Highlights: • The high quality CNT arrays were successfully grown on conductive stainless steel substrates. • The CNT array grown on stainless steel substrate exhibited superior field emission properties. • A high vacuum level about 10–8 Pa was measured by resultant CNT-based ionization gauge. • The ionization gauge with CNT cathode demonstrated a high stability. - Abstract: Vertically aligned carbon nanotube (CNT) arrays were fabricated by chemical vapor deposition (CVD) technique on different substrates. Microstructures and field emission characteristics of the as-grown CNT arrays were investigated systematically, and its application in ionization gauge was also evaluated preliminarily. The results indicate that the as-grown CNT arrays are vertically well-aligned relating to the substrate surfaces, but the CNTs grown on stainless steel substrate are longer and more crystalline than the ones grown on silicon wafer substrate. The field emission behaviors of the as-grown CNT arrays are strongly dependent upon substrate properties. Namely, the CNT array grown on stainless steel substrate has better field emission properties, including lower turn on and threshold fields, better emission stability and repeatability, compared with the one grown on silicon wafer substrate. The superior field emission properties of the CNT array grown on stainless steel substrate are mainly attributed to low contact resistance, high thermal conductivity, good adhesion strength, etc. In addition, the metrological behaviors of ionization gauge with the CNT array grown on stainless steel substrate as an electron source were investigated, and this novel cathode ionization gauge extends the lower limit of linear pressure measurement to 10{sup −8} Pa, which is one order of magnitude lower than the result reported for the same of gauge with CNT cathode.

Magnetic and surface properties of Fe-Nb (Mo, V)-Cu-B-Si ribbons

International Nuclear Information System (INIS)

Butvinova, B.; Butvin, P.; Svec, P. Sr.; Matko, I.; Svec, P.; Janickovic, D.; Kadlecikova, M.

2014-01-01

The rapidly quenched Finemet (FeNbCuBSi) ribbons prepared by planar flow casting of the melt are very variable to obtain very good soft-magnetic properties. An appropriate thermal treatment leading to ultra-fine grain structure enables to attain such properties as desired for practical use. Increasing Fe percentage to the detriment of non-magnetic components lifts saturation induction above 1.3 T, preserves low coercivity and makes the alloy even cheaper to suit its mass production for use in power electronics. Apart from the plenty of benefits the ribbons show some risks. One of them is macroscopic heterogeneity, which often manifests via differences between surfaces and interior of a ribbon [3]. The surfaces squeeze (by in-plane force) the interior of many such ribbons and if engaged in magnetoelastic interaction, the force affects the resulting magnetic anisotropy [4]. Current research shows that changes of hysteresis loop shape come rather from surface crystallization and not from oxides namely in positively magnetostrictive alloys FeNbCuBSi known as low- Si Finemets. The object of this work is to verify whether the substitution of another element instead of Nb (usually incorporated as the grain-growth blocker) can change surface properties and affects the resulting magnetic properties. We chose V and Mo instead of Nb. Oxides, oxyhydroxides and a possible squeezing layer was looked for after higher temperature annealing which ensures partially nanocrystalline structure. (authors)

Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Zahidur R., E-mail: zr.chowdhury@utoronto.ca; Kherani, Nazir P., E-mail: kherani@ecf.utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada)

2014-12-29

This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

Combined effects of vertical and lateral confinement on the magnetic properties of MnAs micro and nano-ribbons

Energy Technology Data Exchange (ETDEWEB)

Steren, L. B.; Tortarolo, M. [Centro Atómico Constituyentes CNEA, 1650 San Martín (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas, C1033AAJ Buenos Aires (Argentina); Fernandez Baldis, F.; Sirena, M. [Consejo Nacional de Investigaciones Científicas y Técnicas, C1033AAJ Buenos Aires (Argentina); Centro Atómico Bariloche and Instituto Balseiro, CNEA, 8400 S. C. de Bariloche (Argentina); Sacchi, M.; Eddrief, M. [Sorbonne Universités, UPMC Univ. Paris 06, UMR 7588, INSP, 4 place Jussieu, F-75005 Paris (France); CNRS, UMR 7588, Institut des Nanosciences de Paris, 4 place Jussieu, F-75005 Paris (France); Etgens, V. H. [Fédération Lavoisier Franklin, UVSQ, 78035 Versailles Cedex (France); Santos, B.; Mentes, T. O.; Locatelli, A. [Elettra-Sincrotrone Trieste S.C.p.A., 34149 Basovizza, Trieste (Italy)

2016-09-07

The micromagnetic domain structure of MnAs films gave place to an intense research activity in the last few years due to its potential application in magneto-electronic devices such as domain-wall track memories and logic circuits. These applications require a full knowledge of miniaturization effects on the magnetic properties of the material. In this work, X-ray photoemission electron microscopy has been used for imaging magnetic domains in lithographically fabricated MnAs ribbons, addressing the dependence of the domain configuration on film thickness and ribbon width. Our experiments show a transition from head-on to regular stripe domains below a critical width/thickness ratio w{sub c} ≈ 6. Micromagnetic simulations suggest that this transition is correlated to the magnetic structure of the surface plane. Depending on the ribbon width and thickness, the magnetic configuration is shown to evolve from flux-closure domain structure to a state of almost homogeneous magnetization, observed for narrower ribbons. The evolution of the domain structure, magnetic fraction, and magnetization with temperature has been studied across the ferromagnetic/paramagnetic transition. Our experiments show that the magnetic configuration in ribbons exhibits higher stability to temperature variations than in as-cast films.

Combined effects of vertical and lateral confinement on the magnetic properties of MnAs micro and nano-ribbons

International Nuclear Information System (INIS)

Steren, L. B.; Tortarolo, M.; Fernandez Baldis, F.; Sirena, M.; Sacchi, M.; Eddrief, M.; Etgens, V. H.; Santos, B.; Mentes, T. O.; Locatelli, A.

2016-01-01

The micromagnetic domain structure of MnAs films gave place to an intense research activity in the last few years due to its potential application in magneto-electronic devices such as domain-wall track memories and logic circuits. These applications require a full knowledge of miniaturization effects on the magnetic properties of the material. In this work, X-ray photoemission electron microscopy has been used for imaging magnetic domains in lithographically fabricated MnAs ribbons, addressing the dependence of the domain configuration on film thickness and ribbon width. Our experiments show a transition from head-on to regular stripe domains below a critical width/thickness ratio w_c ≈ 6. Micromagnetic simulations suggest that this transition is correlated to the magnetic structure of the surface plane. Depending on the ribbon width and thickness, the magnetic configuration is shown to evolve from flux-closure domain structure to a state of almost homogeneous magnetization, observed for narrower ribbons. The evolution of the domain structure, magnetic fraction, and magnetization with temperature has been studied across the ferromagnetic/paramagnetic transition. Our experiments show that the magnetic configuration in ribbons exhibits higher stability to temperature variations than in as-cast films.

X-ray and synchrotron studies of porous silicon

Energy Technology Data Exchange (ETDEWEB)

Sivkov, V. N., E-mail: svn@dm.komisc.ru [Russian Academy of Sciences, Komi Scientific Center, Ural Branch (Russian Federation); Lomov, A. A. [Russian Academy of Sciences, Physical-Technological Institute (Russian Federation); Vasil' ev, A. L. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Nekipelov, S. V. [Komi State Pedagogical Institute (Russian Federation); Petrova, O. V. [Russian Academy of Sciences, Komi Scientific Center, Ural Branch (Russian Federation)

2013-08-15

The results of comprehensive studies of layers of porous silicon of different conductivity types, grown by anodizing standard Si(111) substrates in an electrolyte based on fluoric acid and ethanol with the addition of 5% of iodine and kept in air for a long time, are discussed. Measurements are performed by scanning electron microscopy, high-resolution X-ray diffraction, and ultrasoft X-ray spectroscopy using synchrotron radiation. The structural parameters of the layers (thickness, strain, and porosity) and atomic and chemical composition of the porous-silicon surface are determined. It is found that an oxide layer 1.5-2.3-nm thick is formed on the surface of the silicon skeleton. The near-edge fine structure of the Si 2p absorption spectrum of this layer corresponds to the fine structure of the 2p spectrum of well coordinated SiO{sub 2}. In this case, the fine structure in the Si 2p-edge absorption region of the silicon skeleton is identical to that of the 2p absorption spectrum of crystalline silicon.

Second-harmonic generation in substoichiometric silicon nitride layers

Science.gov (United States)

Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

2013-03-01

Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

Influence of Mn incorporation for Ni on the magnetocaloric properties of rapidly solidified off-stoichiometric NiMnGa ribbons

Energy Technology Data Exchange (ETDEWEB)

Dey, Sushmita; Singh, Satnam; Roy, R.K.; Ghosh, M.; Mitra, A.; Panda, A.K., E-mail: akpanda@nmlindia.org

2016-01-01

The present investigation addresses the magnetocaloric behaviour in a series of Ni{sub 77−x}Mn{sub x}Ga{sub 23} (x=23, 24, 25, 27 and 29) rapidly solidified alloys prepared in the form of ribbons by melt spinning technique. The approach of the study is to identify the off-stoichiometric composition wherein room temperature magneto-structural transformation is achieved. The alloy chemistry was tailored through Mn incorporation for Ni such that the magnetic and structural transitions were at close proximity to achieve highest entropy value of ΔS equal to 8.51 J Kg{sup −1} K{sup −1} for #Mn{sub 24} ribbon measured at an applied field of 3 T. When such transitions are more staggered as in #Mn{sub 29} the entropy value of ribbon reduced to as low as 1.61 J Kg{sup −1} K{sup −1}. Near room temperature transformations in #Mn{sub 24} ribbon have been observed through calorimetric and thermomagnetic evaluation. Reverse martensitic transformation (martensite→autstenite) temperature indicates not only distinct change in the saturation flux density but also an inter-martensitic phase. Microstructural analysis of #Mn{sub 24} alloy ribbon revealed structural ordering with the existence of plate morphology evidenced for martensitic phase. - Highlights: • Magnetocaloric effect in a series of melt spun NiMnGa ribbon is addressed. • The alloy series revealed austenitic state as well as its presence with martensite. • The morphology of the ribbons has been shown and discussed through phase analysis. • Influence of magnetising field on entropy and relative cooling power is discussed. • Influence of intermartensitic state on magnetization plots have also been shown.

Epitaxial III-V nanowires on silicon for vertical devices

NARCIS (Netherlands)

Bakkers, E.P.A.M.; Borgström, M.T.; Einden, Van Den W.; Weert, van M.H.M.; Helman, A.; Verheijen, M.A.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial

Crystalline silicon films grown by pulsed dc magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Reinig, Peter; Fenske, Frank; Fuhs, Walther; Selle, Burkhardt [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekulestr. 5, D-12489 Berlin (Germany)

2002-04-01

Pulsed dc magnetron sputtering is used as a novel method for the deposition of crystalline silicon films on glass substrates. Hydrogen-free polycrystalline Si-films are deposited with high deposition rates at temperatures of 400-450 C and pulse frequencies f in the range 0-250 kHz. Strong preferential (100) orientation of the crystallites is observed with increasing f. High frequency and similarly high negative substrate bias cause an increase of the Ar content and an enhancement of structural disorder. Measurements of the transient floating potential suggest that the observed structural effects are related to bombardment of the growing film by Ar{sup +} ions of high energy.

Growth and characterization of heavily doped silicon crystals

Energy Technology Data Exchange (ETDEWEB)

Scala, R.; Porrini, M. [MEMC Electronic Materials SpA, via Nazionale 59, 39012 Merano (Italy); Borionetti, G. [MEMC Electronic Materials SpA, viale Gherzi 31, Novara (Italy)

2011-08-15

Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, large-diameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Nonlinear resonance ultrasonic vibrations in Czochralski-silicon wafers

Science.gov (United States)

Ostapenko, S.; Tarasov, I.

2000-04-01

A resonance effect of generation of subharmonic acoustic vibrations is observed in as-grown, oxidized, and epitaxial silicon wafers. Ultrasonic vibrations were generated into a standard 200 mm Czochralski-silicon (Cz-Si) wafer using a circular ultrasound transducer with major frequency of the radial vibrations at about 26 kHz. By tuning frequency (f) of the transducer within a resonance curve, we observed a generation of intense f/2 subharmonic acoustic mode assigned as a "whistle." The whistle mode has a threshold amplitude behavior and narrow frequency band. The whistle is attributed to a nonlinear acoustic vibration of a silicon plate. It is demonstrated that characteristics of the whistle mode are sensitive to internal stress and can be used for quality control and in-line diagnostics of oxidized and epitaxial Cz-Si wafers.

High-Tc superconducting antenna-coupled microbolometer on silicon

Science.gov (United States)

Rice, Joseph P.; Grossman, Erich N.; Borcherdt, L. J.; Rudman, D. A.

1994-05-01

A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-Tc superconductor YBa2Cu3O7 (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 X 10-6 W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 microsecond(s) , a responsivity of the 1000 V/W range, and a noise-equivalent power in the 10-12 W/Hz1/2 range at 1000 Hz.

Forming three-dimensional closed shapes from two-dimensional soft ribbons by controlled buckling

Science.gov (United States)

Aoki, Michio; Juang, Jia-Yang

2018-02-01

Conventional manufacturing techniques-moulding, machining and casting-exist to produce three-dimensional (3D) shapes. However, these industrial processes are typically geared for mass production and are not directly applicable to residential settings, where inexpensive and versatile tools are desirable. Moreover, those techniques are, in general, not adequate to process soft elastic materials. Here, we introduce a new concept of forming 3D closed hollow shapes from two-dimensional (2D) elastic ribbons by controlled buckling. We numerically and experimentally characterize how the profile and thickness of the ribbon determine its buckled shape. We find a 2D master profile with which various elliptical 3D shapes can be formed. More complex natural and artificial hollow shapes, such as strawberry, hourglass and wheel, can also be achieved via strategic design and pattern engraving on the ribbons. The nonlinear response of the post-buckling regime is rationalized through finite-element analysis, which shows good quantitative agreement with experiments. This robust fabrication should complement conventional techniques and provide a rich arena for future studies on the mechanics and new applications of elastic hollow structures.

Degradation of the photoluminescence of porous silicon caused by 60Co γ radiation

International Nuclear Information System (INIS)

Astrova, E.V.; Emtsev, V.V.; Lebedev, A.A.

1995-01-01

Two series of experiments were carried out. In the first, as-grown porous silicon was bombarded with 60 Co γ radiation to a dose ∼ 10 20 cm -2 . The photoluminescence intensity fell off by a factor ∼ 50 as a result, although the peak of the band underwent essentially no shift. In the second series, single-crystal silicon was bombarded to the same dose, and then porous silicon was fabricated on it. The intensity and spectra of these samples were the same as usual. Possible degradation mechanisms are discussed. 12 refs., 2 figs

High-field EPR spectroscopy of thermal donors in silicon

DEFF Research Database (Denmark)

Dirksen, R.; Rasmussen, F.B.; Gregorkiewicz, T.

1997-01-01

Thermal donors generated in p-type boron-doped Czochralski-grown silicon by a 450 degrees C heat treatment have been studied by high-field magnetic resonance spectroscopy. In the experiments conducted at a microwave frequency of 140 GHz and in a magnetic field of approximately 5 T four individual...

Silicon nanowires nanogenerator based on the piezoelectricity of alpha-quartz.

Science.gov (United States)

Yin, Kui; Lin, Haiyang; Cai, Qian; Zhao, Yi; Lee, Shuit-Tong; Hu, Fei; Shao, Mingwang

2013-12-21

Silicon nanowires are important semiconductor with core/shell structure. In this work, the piezoelectric material alpha-quartz was grown in the interface of silicon nanowires by thermal treatment at 600 °C for 0.5 h. These nanowires were employed as starting materials to fabricate piezoelectric nanogenerators, which could convert kinetic energy into electrical one, exhibiting an output voltage of 36.5 V and a response current of 1.4 μA under a free-falling object of 300 g at a height of 30 cm.

Using silicone technology to maintain healthy skin in stoma care.

Science.gov (United States)

White, Maddie

The use of silicone in stoma care has grown in recent years and may be considered the next step in the revolutionary development of stoma-care products. Clinical nurse specialists aim to provide evidence-based care at all times, and the same is true for stoma-care nurses. Preventing harm by choosing products that have a sound research base provides the patients with up-to-date, quality care, which enables them to adapt to life with a stoma and return to 'normal' functioning. This article explores the issue of peristomal skin problems and the development of silicone products, and highlights scenarios where it could be an advantage to choose a silicone product.

Fish Marketing of Ribbon Fish (Trichiurus sp.) in Nusantara Fishing Port (NFP)at Palabuhanratu, West Java

Science.gov (United States)

Bambang, Azis Nur

2018-02-01

The objective of this research is to study the marketing process of ribbon fish (Trichiurus sp.), including the marketing margin, marketing agencies, traders and marketing channels The research was carried out for 3 mo in Nusantara Fishing Port (NFP), Palabuhanratu, Sukabumi, West Java. A case study was used in this research. A purposive sampling method was used to collect data from 55 respondents of fish marketing, consisting of fishermen, agents, traders, and retailers, who were involved in the marketing of ribbon fish in NFP Palabuhanratu. The result of the research showed that ribbon fish production in Palabuhanratu fluctuated from year to year. There are two types of ribbon fish marketing, i.e. type one is from fishermen to retailers, and type two is indirect marketing from fisherman to consumers through intermediate traders (exporters). The greatest marketing margin was obtained from the first type, while the smallest marketing margin was obtained from type two. The form of the market was considered to be oligopsony market. Fisherman's share is greatest in the collectors and the smallest share is on retailers. Marketing process in traders is efficient due to its lowest margin and highest fisherman's share.

Magnetic properties of fcc (Co95Fe5)1-xAlx ribbons

International Nuclear Information System (INIS)

Makhlouf, Salah A.; Parker, F.T.; Benameur, T.

1999-01-01

Rapidly quenched (Co 95 Fe 5 ) 1-x Al x ribbons are investigated by X-ray diffraction, magnetization, and Moessbauer effect measurements. A single fcc phase is obtained for all ribbons x ≤ 10 at.%. The lattice constant increases linearly with x and is discussed in connection with magnetic moment. The influence of Al substitution on both magnetization and Fe-atom hyperfine field (H) is studied. At 296 K, the magnetization decreases linearly while H drops nonlinearly as x increases. Al substitution leads to substantial differences in iron hyperfine fields in bcc and fcc systems. Fe moment is perturbed differently by Al substitution in fcc (Co 95 Fe 5 ) 1-x Al x and bcc Fe-Al systems

Intensity dependence and transient dynamics of donor-acceptor pair recombination in ZnO thin films grown on (001) silicon

Science.gov (United States)

Guo, Bing; Qiu, Z. R.; Wong, K. S.

2003-04-01

We report room-temperature time-integrated and time-resolved photoluminescence (PL) measurements on a nominally undoped wurtzite ZnO thin film grown on (001) silicon. A linear and sublinear excitation intensity Iex dependence of the PL intensity were observed for the 379.48-nm exciton line and the weak broad green band (˜510 nm), respectively. The green luminescence was found to decay as hyperbolic t-1, and its peak energy was observed to increase nearly logarithmically with increased Iex. These results are in an excellent agreement with the tunnel-assisted donor-deep-acceptor pair (DAP) model so that its large blueshifts of about 25 meV per decade increase in Iex can be accounted for by the screening of the fluctuating impurity potential. Also, the 30-ps fast decay of the exciton emission was attributed to the rapid trapping of carriers at luminescent impurities, while the short lifetime of τ1/e=200 ps for the green luminescence may be due to an alternative trapping by deeper centers in the ZnO. Finally, singly ionized oxygen and zinc vacancies have been tentatively invoked to act as donor-deep-acceptor candidates for the DAP luminescence, respectively.

Processing of n{sup +}/p{sup −}/p{sup +} strip detectors with atomic layer deposition (ALD) grown Al{sub 2}O{sub 3} field insulator on magnetic Czochralski silicon (MCz-si) substrates

Energy Technology Data Exchange (ETDEWEB)

Härkönen, J., E-mail: jaakko.harkonen@helsinki.fi [Helsinki Institute of Physics (Finland); Tuovinen, E. [Helsinki Institute of Physics (Finland); VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T. [Helsinki Institute of Physics (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Wu, X. [VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Picosun Oy, Tietotie 3, FI-02150 Espoo Finland (Finland); Li, Z. [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

2016-08-21

Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n{sup +} segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO{sub 2} interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al{sub 2}O{sub 3}) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current–voltage and capacitance−voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×10{sup 15} n{sub eq}/cm{sup 2} proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

Microstructure, biocorrosion and cytotoxicity evaluations of rapid solidified Mg-3Ca alloy ribbons as a biodegradable material.

Science.gov (United States)

Gu, X N; Li, X L; Zhou, W R; Cheng, Y; Zheng, Y F

2010-06-01

Rapidly solidified (RS) Mg–3Ca alloy ribbons were prepared by the melt-spinning technique at different wheel rotating speeds (15 m s(-1), 30 m s(-1) and 45 m s(-1) with the as-cast Mg–3Ca alloy ingot as a raw material. The RS45 Mg–3Ca alloy ribbon showed a much more fine grain size feature (approximately 200–500 nm) in comparison to the coarse grain size (50–100 μm)of the original as-cast Mg–3Ca alloy ingot. The corrosion electrochemical tests in simulated body fluid indicated that the corrosion rate of the as-cast Mg–3Ca alloy was strongly reduced by the RS procedure and tended to be further decreased with increasing wheel rotating speeds(1.43 mm yr(-1) for RS15, 0.94 mm yr(-1) for RS30 and 0.36 mm yr(-1) for RS45). The RS Mg–3Ca alloy ribbons showed more uniform corrosion morphology compared with the as-cast Mg–3Ca alloy after polarization. The cytotoxicity evaluation revealed that the three experimental as-spun Mg–3Ca alloy ribbon extracts did not induce toxicity to the L-929 cells,whereas the as-cast Mg–3Ca alloy ingot extract did. The L-929 cells showed more improved adhesion on the surfaces of the three as-spun Mg–3Ca alloy ribbons than that of the as-cast Mg–3Ca alloy ingot.

Microstructure, biocorrosion and cytotoxicity evaluations of rapid solidified Mg-3Ca alloy ribbons as a biodegradable material

International Nuclear Information System (INIS)

Gu, X N; Zhou, W R; Zheng, Y F; Li, X L; Cheng, Y

2010-01-01

Rapidly solidified (RS) Mg-3Ca alloy ribbons were prepared by the melt-spinning technique at different wheel rotating speeds (15 m s -1 , 30 m s -1 and 45 m s -1 ) with the as-cast Mg-3Ca alloy ingot as a raw material. The RS45 Mg-3Ca alloy ribbon showed a much more fine grain size feature (approximately 200-500 nm) in comparison to the coarse grain size (50-100 μm) of the original as-cast Mg-3Ca alloy ingot. The corrosion electrochemical tests in simulated body fluid indicated that the corrosion rate of the as-cast Mg-3Ca alloy was strongly reduced by the RS procedure and tended to be further decreased with increasing wheel rotating speeds (1.43 mm yr -1 for RS15, 0.94 mm yr -1 for RS30 and 0.36 mm yr -1 for RS45). The RS Mg-3Ca alloy ribbons showed more uniform corrosion morphology compared with the as-cast Mg-3Ca alloy after polarization. The cytotoxicity evaluation revealed that the three experimental as-spun Mg-3Ca alloy ribbon extracts did not induce toxicity to the L-929 cells, whereas the as-cast Mg-3Ca alloy ingot extract did. The L-929 cells showed more improved adhesion on the surfaces of the three as-spun Mg-3Ca alloy ribbons than that of the as-cast Mg-3Ca alloy ingot.

Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon

Science.gov (United States)

Catena, Alberto; McJunkin, Thomas; Agnello, Simonpietro; Gelardi, Franco M.; Wehner, Stefan; Fischer, Christian B.

2015-08-01

Silicon (1 0 0) has been gradually covered by amorphous hydrogenated carbon (a-C:H) films via an industrial process. Two types of these diamond-like carbon (DLC) coatings, one more flexible (f-DLC) and one more robust (r-DLC), have been investigated. Both types have been grown by a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. Surface morphologies have been studied in detail by atomic force microscopy (AFM) and Raman spectroscopy has been used to investigate the DLC structure. Both types appeared to have very similar morphology and sp2 carbon arrangement. The average height and area for single grains have been analyzed for all depositions. A random distribution of grain heights was found for both types. The individual grain structures between the f- and r-type revealed differences: the shape for the f-DLC grains is steeper than for the r-DLC grains. By correlating the average grain heights to the average grain areas for all depositions a limited region is identified, suggesting a certain regularity during the DLC deposition mechanisms that confines both values. A growth of the sp2 carbon entities for high r-DLC depositions is revealed and connected to a structural rearrangement of carbon atom hybridizations and hydrogen content in the DLC structure.

The development of a high-resolution scintillating fiber tracker with silicon photomultiplier readout

International Nuclear Information System (INIS)

Roper Yearwood, Gregorio

2013-01-01

In this work I present the design and test results for a novel, modular tracking detector from scintillating fibers which are read out by silicon photomultiplier (SiPM) arrays. The detector modules consist of 0.25 mm thin scintillating fibers which are closely packed in five-layer ribbons. Two ribbons are fixed to both sides of a carbon-fiber composite structure. Custom made SiPM arrays with a photo-detection efficiency of about 50% read out the fibers. Several 860 mm long and 32 mm wide tracker modules were tested in a secondary 12 GeV/c beam at the PS facilities, CERN in November of 2009. During this test a spatial resolution better than 0.05 mm at an average light yield of about 20 photons for a minimum ionizing particle was determined. This work details the characterization of scintillating fibers and silicon photomultipliers of different make and model. It gives an overview of the production of scintillating fiber modules. The behavior of detector modules during the test-beam is analyzed in detail and different options for the front-end electronics are compared. Furthermore, the implementation of the proposed tracking detector from scintillating fibers within the scope of the PERDaix experiment is discussed. The PERDaix detector is a permanent magnet spectrometer with a weight of 40 kg. It consists of 8 tracking detector layers from scintillating fibers, a time-of-flight detector from plastic scintillator bars with silicon photomultiplier readout and a transition radiation detector from an irregular fleece radiator and Xe/CO 2 filled proportional counting tubes. The PERDaix detector was launched with a helium balloon within the scope of the ''Balloon-Experiments for University Students'' (BEXUS) program from Kiruna, Sweden in November 2010. For a few hours PERDaix reached an altitude of 33 km and measured cosmic rays. In May 2011, the PERDaix detector was characterized during a test-beam at the PS-facilities at CERN. This work introduces methods for event

Influence of surface pre-treatment on the electronic levels in silicon MaWCE nanowires.

Science.gov (United States)

Venturi, Giulia; Castaldini, Antonio; Schleusener, Alexander; Sivakov, Vladimir; Cavallini, Anna

2015-05-15

Deep level transient spectroscopy (DLTS) was performed on n-doped silicon nanowires grown by metal-assisted wet chemical etching (MaWCE) with gold as the catalyst in order to investigate the energetic scheme inside the bandgap. To observe the possible dependence of the level scheme on the processing temperature, DLTS measurements were performed on the nanowires grown on a non-treated Au/Si surface and on a thermally pre-treated Au/Si surface. A noticeable modification of the configuration of the energy levels was observed, induced by the annealing process. Based on our results on these MaWCE nanowires and on literature data about deep levels in bulk silicon, some hypotheses were advanced regarding the identification of the defects responsible of the energy levels revealed.

Concurrent gradients of ribbon volume and AMPA-receptor patch volume in cochlear afferent synapses on gerbil inner hair cells.

Science.gov (United States)

Zhang, Lichun; Engler, Sina; Koepcke, Lena; Steenken, Friederike; Köppl, Christine

2018-07-01

The Mongolian gerbil is a classic animal model for age-related hearing loss. As a prerequisite for studying age-related changes, we characterized cochlear afferent synaptic morphology in young adult gerbils, using immunolabeling and quantitative analysis of confocal microscopic images. Cochlear wholemounts were triple-labeled with a hair-cell marker, a marker of presynaptic ribbons, and a marker of postsynaptic AMPA-type glutamate receptors. Seven cochlear positions covering an equivalent frequency range from 0.5 - 32 kHz were evaluated. The spatial positions of synapses were determined in a coordinate system with reference to their individual inner hair cell. Synapse numbers confirmed previous reports for gerbils (on average, 20-22 afferents per inner hair cell). The volumes of presynaptic ribbons and postsynaptic glutamate receptor patches were positively correlated: larger ribbons associated with larger receptor patches and smaller ribbons with smaller patches. Furthermore, the volumes of both presynaptic ribbons and postsynaptic receptor patches co-varied along the modiolar-pillar and the longitudinal axes of their hair cell. The gradients in ribbon volume are consistent with previous findings in cat, guinea pig, mouse and rat and further support a role in differentiating the physiological properties of type I afferents. However, the positive correlation between the volumes of pre- and postsynaptic elements in the gerbil is different to the opposing gradients found in the mouse, suggesting species-specific differences in the postsynaptic AMPA receptors that are unrelated to the fundamental classes of type I afferents. Copyright © 2018 Elsevier B.V. All rights reserved.

Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Zamiri, M., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu; Klein, B.; Schuler-Sandy, T.; Dahiya, V.; Cavallo, F. [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); Myers, S. [SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States); Krishna, S., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States)

2016-02-29

We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al{sub 0.6}Ga{sub 0.4}Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface between the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.

Formation of aluminum films on silicon by ion beam deposition: a comparison with ionized cluster beam deposition

International Nuclear Information System (INIS)

Zuhr, R.A.; Haynes, T.E.; Galloway, M.D.; Tanaka, S.; Yamada, A.; Yamada, I.

1991-01-01

The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically analyzed ion beam to low energies (10-200 eV) for direct deposition onto the substrate under UHV conditions. The aluminum-on-silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. This technique has produced intriguing results for aluminum, with oriented crystalline films being formed at room temperature in spite of the 25% mismatch in lattice constant between aluminum and silicon. In this work, we have studied the formation of such films by IBD, with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40 to 300degC and with ion energies of 30-120 eV per ion. Completed films were analyzed by ion scattering, X-ray diffraction, scanning-electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are comparable to those for similar films grown by ICB deposition. (orig.)

Room temperature photoluminescence in the visible range from silicon nanowires grown by a solid-state reaction

International Nuclear Information System (INIS)

Anguita, J V; Sharma, P; Henley, S J; Silva, S R P

2009-01-01

The solid-liquid-solid method (also known as the solid-state method) is used to produce silicon nanowires at the core of silica nanowires with a support catalyst layer structure of nickel and titanium layers sputtered on oxide-coated silicon wafers. This silane-free process is low cost and large-area compatible. Using electron microscopy and Raman spectroscopy we deduce that the wires have crystalline silicon cores. The nanowires show photoluminescence in the visible range (orange), and we investigate the origin of this band. We further show that the nanowires form a random mesh that acts as an efficient optical trap, giving rise to an optically absorbing medium.

Room temperature photoluminescence in the visible range from silicon nanowires grown by a solid-state reaction

Science.gov (United States)

Anguita, J. V.; Sharma, P.; Henley, S. J.; Silva, S. R. P.

2009-11-01

The solid-liquid-solid method (also known as the solid-state method) is used to produce silicon nanowires at the core of silica nanowires with a support catalyst layer structure of nickel and titanium layers sputtered on oxide-coated silicon wafers. This silane-free process is low cost and large-area compatible. Using electron microscopy and Raman spectroscopy we deduce that the wires have crystalline silicon cores. The nanowires show photoluminescence in the visible range (orange), and we investigate the origin of this band. We further show that the nanowires form a random mesh that acts as an efficient optical trap, giving rise to an optically absorbing medium.

Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

Science.gov (United States)

Rohatgi, A.; Meier, D. L.; Rai-Choudhury, P.; Fonash, S. J.; Singh, R.

1986-01-01

The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

Oxidation behaviour of ribbon shape carbon fibers and their composites

International Nuclear Information System (INIS)

Manocha, L.M.; Warrier, Ashish; Manocha, S.; Edie, D.D.; Ogale, A.A.

2006-01-01

Carbon fibers, though important constituent as reinforcements for high performance carbon/carbon composites, are shadowed by their oxidation in air at temperatures beginning 450 deg. C. Owing to tailorable properties of carbon fibers, efforts are underway to explore structural modification possibilities to improve the oxidation resistance of the fibers and their composites. The pitch based ribbon shape carbon fibers are found to have highly preferential oriented graphitic structure resulting in high mechanical properties and thermal conductivity. In the present work oxidation behaviour of ribbon shape carbon fibers and their composites heat treated to 1000-2700 deg. C has been studied. SEM examination of these composites exhibits development of graphitic texture and ordering within the fibers with increase in heat treatment temperature. Oxidation studies made by thermogravimetric analysis in air show that matrix has faster rate of oxidation and in the initial stages the matrix gets oxidized at faster rate with slower rate of oxidation of the fibers depending on processing conditions of fibers and composites

Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Hamidinezhad, Habib; Wahab, Yussof; Othaman, Zulkafli; Ismail, Abd Khamim

2011-01-01

Silicon nanowires (SiNWs) were synthesized from pure silane precursor gas and Au nanoparticles catalyst at below Au-Si eutectic temperature. The SiNWs were grown onto Si (1 1 1) substrates using very high frequency plasma enhanced chemical vapor deposition via a vapor-solid-solid mechanism at temperatures ranging from 363 to 230 deg. C. The morphology of the synthesized SiNWs was characterized by means of field emission scanning electron microscope equipped with energy dispersive X-ray, high resolution transmission electron microscopy, X-ray diffraction technique and Raman spectroscope. Results demonstrated that the SiNWs can be grown at the temperature as low as 250 deg. C. In addition, it was revealed that the grown wires were silicon-crystallized.

Magneto-Impedance behavior of Co-Fe-Nb-Si-B-based ribbons

Energy Technology Data Exchange (ETDEWEB)

Sarkar, Partha; Mohanta, O.; Pal, S.K.; Panda, A.K. [National Metallurgical Laboratory, Council of Scientific and Industrial Research, Jamshedpur 831007 (India); Mitra, A., E-mail: amitra@nmlindia.or [National Metallurgical Laboratory, Council of Scientific and Industrial Research, Jamshedpur 831007 (India)

2010-04-15

The giant magneto-impedance of melt spun Co{sub x}Fe{sub 72-x}Nb{sub 4}Si{sub 4}B{sub 20}(x=10, 20, 36, 50) amorphous and nanostructured ribbons have been investigated. Alloys have been optimized at the driving current amplitude, frequency and found that amorphous ribbon of nominal composition of Co{sub 36}Fe{sub 36}Nb{sub 4}Si{sub 4}B{sub 20} shown maximum GMI ratio of 13%. The behaviour of the driving current amplitude on the GMI behaviour was studied and the sample was optimized for driving current amplitude, I{sub ac}=10 mA. The frequency dependence of the GMI behaviour was studied for the ribbon sample Co{sub 36}Fe{sub 36}Nb{sub 4}Si{sub 4}B{sub 20} at frequency in the range of 100 kHz-1.2 MHz of the optimized driving current amplitude and it was found that the sample showed the maximum GMI behaviour at f=700 kHz. The optimized samples were Joule heated at the current density J=0-35 A/m{sup 2} for a period of 1 min. The GMI ratio initially increased then progressively deteriorated with J, but after a certain range it shows up to 16% of improvement in the magneto-impedance value due the increase of nanocrystalline volume fraction. The asymmetry in the GMI profile was observed for the sample Joule heated at J=1-5 A/m{sup 2} for 1 min.

Effect of annealing treatment on soft magnetic properties of Fe-6.5 wt% Si wide ribbons

International Nuclear Information System (INIS)

Roy, R.K.; Panda, A.K.; Ghosh, M.; Mitra, A.; Ghosh, R.N.

2009-01-01

The 25 mm wide ribbons of Fe-6.5 wt% Si alloy have been developed by melt spinning technique, showing sufficient ductility and white silver appearance. Two magnetic transitions take place at 676 and 760 deg. C due to the formation of B2 ordered phase and A2 disordered paramagnetic phase, respectively. The saturation magnetization of the ribbon is 17.5 kG under the applied field of 12 kG. The as-cast ribbons consist of disordered A2 structure with a low volume of B2 phases while the annealed microstructure comprises a dispersion of B2 domains in the disordered A2 matrix. The alloy shows the enhancement of the soft magnetic properties with a reduction in coercivity from 150 A/m in the as-cast state to 45 A/m in the annealed condition at 850 deg. C.

Manifold-splitting regularization, self-linking, twisting, writhing numbers of space-time ribbons

International Nuclear Information System (INIS)

Tze, C.H.

1988-01-01

The authors present an alternative formulation of Polyakov's regularization of Gauss' integral formula for a single closed Feynman path. A key element in his proof of the D = 3 fermi-bose transmutations induced by topological gauge fields, this regularization is linked here with the existence and properties of a nontrivial topological invariant for a closed space ribbon. This self-linking coefficient, an integer, is the sum of two differential characteristics of the ribbon, its twisting and writhing numbers. These invariants form the basis for a physical interpretation of our regularization. Their connection to Polyakov's spinorization is discussed. The authors further generalize their construction to the self-linking, twisting and writhing of higher dimensional d = eta(odd) submanifolds in D = (2eta + 1) space-time

LSA Large Area Silicon Sheet Task Continuous Czochralski Process Development

Science.gov (United States)

Rea, S. N.

1979-01-01

A commercial Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a small, in-situ premelter with attendant silicon storage and transport mechanisms. Using a vertical, cylindrical graphite heater containing a small fused quartz test tube linear from which the molten silicon flowed out the bottom, approximately 83 cm of nominal 5 cm diamter crystal was grown with continuous melt addition furnished by the test tube premelter. High perfection crystal was not obtained, however, due primarily to particulate contamination of the melt. A major contributor to the particulate problem was severe silicon oxide buildup on the premelter which would ultimately drop into the primary melt. Elimination of this oxide buildup will require extensive study and experimentation and the ultimate success of continuous Czochralski depends on a successful solution to this problem. Economically, the continuous Czochralski meets near-term cost goals for silicon sheet material.

Effect of wheel speed and annealing temperature on microstructure and texture evolution of Ni{sub 45}Mn{sub 36.6}In{sub 13.4}Co{sub 5} ribbon

Energy Technology Data Exchange (ETDEWEB)

Feng, Yan, E-mail: yanfeng@nwpu.edu.cn [State Key Laboratory of Solidification Processing Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Chen, Hong [State Key Laboratory of Solidification Processing Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Gao, Li [College of Engineering Science and Technology, Shanghai Ocean University, Shanghai 201306 (China); Wang, Haibo [College of Physics and Electronic Engineering, Taizhou University, Taizhou, Zhejiang 318000 (China); Bian, Xiaohai; Gong, Mingjie [State Key Laboratory of Solidification Processing Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China)

2016-12-15

Ni{sub 45}Mn{sub 36.6}In{sub 13.4}Co{sub 5} magnetic shape memory alloy was successfully produced as preferentially textured ribbon by melting spinning with different wheel speed. X-ray diffraction (XRD) and electron back scatter diffraction (EBSD) were used to study structure and texture evolution of these melt-spun ribbons. The thickness of melt-spun ribbon is 42 μm, 65 μm and 30 μm depending on wheel speed of 1 0 m/s, 15 m/s and 20 m/s, respectively. Density of α fiber texture (〈100〉//ND) vary with wheel speed changes, and is most intensive in the ribbon with wheel speed of 15 m/s. Grains of the ribbons grow after being annealed at 873 K, 973 K, 1073 K and 1173 K, recrystallization was not observed in ribbons after being annealed at 873 K but occurred in ribbons after being annealed at higher temperatures. The α fiber texture becomes weaker to some extent after annealing at different temperatures, due to new recrystallization texture formed at the process of annealing. - Highlights: •Sectional part of shape memory ribbon is firstly investigated by EBSD method. •Thickness and texture of ribbons vary with wheel speed. •Annealing temperature affect texture and microstructure evolution greatly. •Recrystallization textures were observed in ribbons after being annealed.

Frequency effects and properties of plasma deposited fluorinated silicon nitride

International Nuclear Information System (INIS)

Chang, C.; Flamm, D.L.; Ibbotson, D.E.; Mucha, J.A.

1988-01-01

The properties of low-hydrogen, fluorinated plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films grown using NF 3 /SiH 4 /N 2 feed mixtures in 200 kHz and 14 MHz discharges were compared. High-energy ion bombardment at 200 kHz is expected to enhance surface diffusion and chemical reconstruction. Compared to fluorinated silicon nitride deposited at 14 MHz under otherwise comparable conditions, the 200 kHz films had a lower Si--H bond concentration (approx. 21 cm -3 ), lower total hydrogen content (5--8 x 10 21 cm -3 ), better resistance to oxidation, lower compressive stress (-0.7 to -1.5 Gdyne/cm), and higher density (3.1 g/cm 3 ). The dielectric constant of better low-frequency Class I films was constant to 500 MHz, while that of high-frequency films fell up to 15% between 100 Hz and 10 MHz. The absorption edges of low-frequency PECVD fluorinated silicon nitride films were between 5.0 and 6.1 eV, which compare with 4.4 to 5.6 eV for the high-excitation frequency fluorinated material and 3 to 4 eV for conventional PECVD nitride. However high-frequency films may have fewer trap centers and a lower dielectric constant. 14 MHz p-SiN:F films grown with NH 3 as an auxiliary nitrogen source showed absorption edges similar to low-frequency material grown from NF 3 /SiH 4 /N 2 , but they have substantially more N--H bonding. The dielectric constant and absorption edge of these films were comparable to those of low-frequency p-SiN:F from NF 3 /SiH 4 /N 2

Behavior of the potential-induced degradation of photovoltaic modules fabricated using flat mono-crystalline silicon cells with different surface orientations

Science.gov (United States)

Yamaguchi, Seira; Masuda, Atsushi; Ohdaira, Keisuke

2016-04-01

This paper deals with the dependence of the potential-induced degradation (PID) of flat, p-type mono-crystalline silicon solar cell modules on the surface orientation of solar cells. The investigated modules were fabricated from p-type mono-crystalline silicon cells with a (100) or (111) surface orientation using a module laminator. PID tests were performed by applying a voltage of -1000 V to shorted module interconnector ribbons with respect to an Al plate placed on the cover glass of the modules at 85 °C. A decrease in the parallel resistance of the (100)-oriented cell modules is more significant than that of the (111)-oriented cell modules. Hence, the performance of the (100)-oriented-cell modules drastically deteriorates, compared with that of the (111)-oriented-cell modules. This implies that (111)-oriented cells offer a higher PID resistance.

Microstructure, biocorrosion and cytotoxicity evaluations of rapid solidified Mg-3Ca alloy ribbons as a biodegradable material

Energy Technology Data Exchange (ETDEWEB)

Gu, X N; Zhou, W R; Zheng, Y F [State Key Laboratory for Turbulence and Complex System and Department of Advanced Materials and Nanotechnology, College of Engineering, Peking University, Beijing 100871 (China); Li, X L [Center for Biomedical Materials and Engineering, Harbin Engineering University, Harbin 150001 (China); Cheng, Y, E-mail: yfzheng@pku.edu.c [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China)

2010-06-01

Rapidly solidified (RS) Mg-3Ca alloy ribbons were prepared by the melt-spinning technique at different wheel rotating speeds (15 m s{sup -1}, 30 m s{sup -1} and 45 m s{sup -1}) with the as-cast Mg-3Ca alloy ingot as a raw material. The RS45 Mg-3Ca alloy ribbon showed a much more fine grain size feature (approximately 200-500 nm) in comparison to the coarse grain size (50-100 {mu}m) of the original as-cast Mg-3Ca alloy ingot. The corrosion electrochemical tests in simulated body fluid indicated that the corrosion rate of the as-cast Mg-3Ca alloy was strongly reduced by the RS procedure and tended to be further decreased with increasing wheel rotating speeds (1.43 mm yr{sup -1} for RS15, 0.94 mm yr{sup -1} for RS30 and 0.36 mm yr{sup -1} for RS45). The RS Mg-3Ca alloy ribbons showed more uniform corrosion morphology compared with the as-cast Mg-3Ca alloy after polarization. The cytotoxicity evaluation revealed that the three experimental as-spun Mg-3Ca alloy ribbon extracts did not induce toxicity to the L-929 cells, whereas the as-cast Mg-3Ca alloy ingot extract did. The L-929 cells showed more improved adhesion on the surfaces of the three as-spun Mg-3Ca alloy ribbons than that of the as-cast Mg-3Ca alloy ingot.

Vertically aligned nanowires on flexible silicone using a supported alumina template prepared by pulsed anodization

DEFF Research Database (Denmark)

Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.

2009-01-01

Carpets of vertically aligned nanowires on flexible substrates are successfully realized by a template method. Applying special pulsed anodization conditions, defect-free nanoporous alumina structures supported on polydimethylsiloxane (PDMS), a flexible silicone elastomer, are created. By using...... this template with nanopores ending on a conducting underlayer, a high-density nanowire array can be simply grown by direct DCelectrodeposition on the top of the silicone rubber....

Preparation and characterization of polymer-derived amorphous silicon carbide with silicon-rich stoichiometry

Energy Technology Data Exchange (ETDEWEB)

Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Iwasaka, Akira [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Takagishi, Hideyuki [Faculty of Symbiotic System Science, Fukushima University, 1 Kanayagawa, Fukushima-shi, Fukushima 960-1296 (Japan); Shimoda, Tatsuya [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

2016-08-01

Polydihydrosilane with pendant hexyl groups was synthesized to obtain silicon-rich amorphous silicon carbide (a-SiC) films via the solution route. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage. Therefore, the polymer provides sufficient purity for the fabrication of semiconducting a-SiC. Here, we investigated the correlation of Si/C stoichiometry between the polymer and the resultant a-SiC film. The structural, optical, and electrical properties of the films with various carbon contents were also explored. Experimental results suggested that the excess carbon that did not participate in Si−C configurations was decomposed and was evaporated during polymer-to-SiC conversion. Consequently, the upper limit of the carbon in resultant a-SiC film was < 50 at.%; namely, the polymer provided silicon-rich a-SiC, whereas the conventionally used polycarbosilane inevitably provides carbon-rich one. These features of this unusual polymer open up a frontier of polymer-derived SiC and solution-processed SiC electronics. - Highlights: • Polymeric precursor solution for silicon carbide (SiC) is synthesized. • Semiconducting amorphous SiC is prepared via solution route. • The excess carbon is decomposed during cross-linking resulting in Si-rich SiC films. • The grown SiC films contain substantial amount of hydrogen atoms as SiH{sub n}/CH{sub n} entities. • Presence of CH{sub n} entities induces dangling bonds, causing poor electrical properties.

Surface properties and field emission characteristics of chemical vapor deposition diamond grown on Fe/Si substrates

International Nuclear Information System (INIS)

Hirakuri, Kenji; Yokoyama, Takahiro; Enomoto, Hirofumi; Mutsukura, Nobuki; Friedbacher, Gernot

2001-01-01

Electron field emission characteristics of diamond grains fabricated on iron dot-patterned silicon (Fe/Si) substrates at different methane concentrations have been investigated. The characteristics of the samples could be improved by control of the methane concentration during diamond fabrication. Etching treatment of the as-grown diamond has enhanced the emission properties both with respect to current and threshold voltage. In order to study the influence of etching effects on the field emission characteristics, the respective surfaces were studied by Raman spectroscopy, Auger electron spectroscopy, and electron spectroscopy for chemical analysis (ESCA). ESCA revealed intensive graphite and FeO x peaks on the sample surface grown at high methane concentration. For the etched samples, the peaks of diamond and silicon carbide were observed, and the peaks of nondiamond carbon disappeared. The experimental results show that the etching process removes graphitic and nondiamond carbon components. [copyright] 2001 American Institute of Physics

SPECTROSCOPIC OBSERVATIONS OF AN EVOLVING FLARE RIBBON SUBSTRUCTURE SUGGESTING ORIGIN IN CURRENT SHEET WAVES

Energy Technology Data Exchange (ETDEWEB)

Brannon, S. R.; Longcope, D. W.; Qiu, J. [Department of Physics, Montana State University, Bozeman, MT 59717 (United States)

2015-09-01

We present imaging and spectroscopic observations from the Interface Region Imaging Spectrograph of the evolution of the flare ribbon in the SOL2014-04-18T13:03 M-class flare event, at high spatial resolution and time cadence. These observations reveal small-scale substructure within the ribbon, which manifests as coherent quasi-periodic oscillations in both position and Doppler velocities. We consider various alternative explanations for these oscillations, including modulation of chromospheric evaporation flows. Among these, we find the best support for some form of wave localized to the coronal current sheet, such as a tearing mode or Kelvin–Helmholtz instability.

Infrared defect dynamics—Nitrogen-vacancy complexes in float zone grown silicon introduced by electron irradiation

Science.gov (United States)

Inoue, Naohisa; Kawamura, Yuichi

2018-05-01

The interaction of nitrogen and intrinsic point defects, vacancy (V) and self-interstitial (I), was examined by infrared absorption spectroscopy on the electron irradiated and post-annealed nitrogen doped float zone (FZ) silicon crystal. Various absorption lines were observed, at 551 cm-1 in as-grown samples, at 726 and 778 cm-1 in as-irradiated samples (Ir group), at 689 cm-1 after post-annealing at 400 °C and above (400 °C group), at 762 and 951 cm-1 after annealing at 600 °C (600 °C group), and at 714 cm-1 up to 800 °C (800 °C group). By irradiation, a part of N2 was changed into the Ir group. VN2 is the candidate for the origin of the Ir group. By the post annealing at 400 and 600 °C, a part of N2 and the Ir group were changed into the 400 °C group, to less extent at 600 °C. V2N2 is the candidate for the origin of the 400 °C group. By annealing at 600 °C, most of the Ir group turned into 400 °C and 600 °C groups. By annealing at 800 °C, N2 recovered almost completely, and most other complexes were not observed. Recently, lifetime degradation has been observed in the nitrogen doped FZ Si annealed at between 450 and 800 °C. The N-V interaction in the same temperature range revealed here will help to understand the lifetime degradation mechanism. The behavior of the 689 cm-1 line corresponded well to the lifetime degradation.

Partially and fully de-alloyed glassy ribbons based on Au: Application in methanol electro-oxidation studies

Energy Technology Data Exchange (ETDEWEB)

Paschalidou, Eirini Maria, E-mail: epaschal@unito.it [Dipartimento di Chimica e Centro Interdipartimentale NIS (Nanostructured Surfaces and Interfaces), Università di Torino, Via Pietro Giuria 7, 10125, Torino (Italy); Scaglione, Federico [Dipartimento di Chimica e Centro Interdipartimentale NIS (Nanostructured Surfaces and Interfaces), Università di Torino, Via Pietro Giuria 7, 10125, Torino (Italy); Gebert, Annett; Oswald, Steffen [Leibniz Institut für Festkörper- und Werkstoffforschung IFW, Helmholtzstraße 20, 01069, Dresden (Germany); Rizzi, Paola; Battezzati, Livio [Dipartimento di Chimica e Centro Interdipartimentale NIS (Nanostructured Surfaces and Interfaces), Università di Torino, Via Pietro Giuria 7, 10125, Torino (Italy)

2016-05-15

In this work, electrochemical de-alloying of an amorphous alloy, Au{sub 40}Cu{sub 28}Ag{sub 7}Pd{sub 5}Si{sub 20}, cast in ribbon form by melt spinning, has been performed, obtaining self standing nanoporous materials suitable for use as electrodes for electrocatalytic applications. The de-alloying encompasses removal of less noble elements and the crystallization of Au, resulting in interconnected ligaments whose size and morphology are described as a function of time. Depending on de-alloying time, the crystals may contain residual amounts of Cu, Ag and Pd, as shown by Auger Electron Spectroscopy (AES), Energy Dispersive Spectroscopy (EDS) and Cyclic Voltammetry (CV) in a basic solution. Current density peaks in the 0.16–0.28 V range (vs Ag/AgCl) indicate that the porous ribbons are active for the electro-oxidation of methanol. The partially de-alloyed samples, which still partially contain the amorphous phase because of the shorter etching times, have finer ligaments and display peaks at lower potential. However, the current density decreases rapidly during repeated potential scans. This is attributed to the obstruction of Au sites, mainly by the Cu oxides formed during the scans. The fully de-alloyed ribbons display current peaks at about 0.20 V and remain active for hundreds of scans at more than 60% of the initial current density. They can be fully re-activated to achieve the same performance levels after a brief immersion in nitric acid. The good activity is due to trapped Ag and Pd atoms in combination with ligament morphology. - Graphical abstract: Fine ligaments and pores made by de-alloying a glassy ribbon of a Au-based alloy, homogeneously produced across the thickness (25 μm) for studying methanol's electro-oxidation behavior. - Highlights: • Size and composition of nanoporous layers tailored in de-alloying Au-based glassy ribbons. • From amorphous precursor fine crystals occur in ligaments with residual Pd and Ag. • Fully de

Flare Ribbon Expansion and Energy Release Ayumi Asai , Takaaki ...

Indian Academy of Sciences (India)

2001-04-10

1Nobeyama Solar Radio Observatory, Minamisaku, Nagano, 384-1305, Japan. ... X2.3 solar flare which occurred on April 10, 2001. .... In the right panel of. Fig. 3, we show the temporal variation of the physical parameters, such as Bp, vf , ˙ , and S along a slit line. Here, we defined vf as the speed of the flare-ribbon ...

High-{Tc} superconducting antenna-coupled microbolometer on silicon

Energy Technology Data Exchange (ETDEWEB)

Rice, J.P.; Grossman, E.N.; Borcherdt, L.J.; Rudman, D.A. [National Inst. of Standards and Technology, Boulder, CO (United States). Cryoelectronic Metrology Group

1994-12-31

A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-{Tc} superconductor YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 {times} 10{sup {minus}6} W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 {micro}s, a responsivity in the 1,000 V/W range, and a noise-equivalent power (NEP) in the 10{sup {minus}12} W/Hz{sup 1/2} range at 1,000 Hz.

Improved magnetoimpedance and mechanical properties on nanocrystallization of amorphous Fe68.5Si18.5Cu1Nb3B9 ribbons

International Nuclear Information System (INIS)

Sahoo, Trilochan; Majumdar, B.; Srinivas, V.; Srinivas, M.; Nath, T.K.; Agarwal, G.

2013-01-01

The effect of heat-treatment temperature on evolution of microstructures, mechanical and soft magnetic properties and magnetoimpedance (MI) effect in rapidly solidified Fe 68.5 Si 18.5 Cu 1 Nb 3 B 9 ribbons, has been investigated. The as-quenched ribbons were subjected to heat-treatment at different temperatures between 400 and 600 °C for 1 h under high vacuum. Detailed structural studies on the ribbons heat-treated at and above 525 °C revealed the presence of nanocrystalline Fe 3 Si phases embedded in a residual amorphous matrix. The ribbon heat-treated at 550 °C temperature exhibits maximum ductility, maximum relative permeability of 4.8×10 4 , minimum coercivity of 0.1 Oe, and maximum MI value of 62%. The enhanced MI effect is believed to be related to the magnetic softening of 550 °C heat-treated ribbons. However, the magnetic properties and MI effect deteriorated in the samples heat-treated above 550 °C due to the coarsening of grain sizes. The soft magnetic behavior of the nanocrystalline ribbons are discussed in the light of random anisotropy model, whereas the MI effect is discussed through standard skin effect in electrodynamics. - Highlights: • Microstructure was tuned by controlled crystallization to obtain superior magnetic properties. • Improved MI in the heat-treated ribbons is attributed to the superior electromagnetic properties. • Correlation between MI and magnetic properties of nc-Fe 68.5 Si 18.5 Cu 1 Nb 3 B 9 is established. • All the observed features are consistent with the proposed random anisotropy model

THE SURFACE STRUCTURAL AND MECHANICAL PROPERTIES OF THE AMORPHOUS CO22Y54AL24 RIBBON

Directory of Open Access Journals (Sweden)

Anna Bukowska

2013-09-01

Full Text Available The aim of this study was to manufacture amorphous Co22Y54Al24 alloy in a form of thin ribbons and to investigate their properties. The investigated ribbons were prepared by rapid solidification of molten metal on a rotating copper cylinder (melt-spinning. In order to obtain the material with amorphous structure, the cooling rate of the liquid alloy should vary in a range from 104 to 106 K/s. The microstructure studies were performed using X-ray diffractometery. The mechanical properties were investigated by metallographic studies, micro-hardness and tribological resistance tests moreover the surface roughness profile were analyzed. All studies were performed for two sides of tapes, since the differences in ribbons surface, related with manufacturing process, are clearly visible. The surface from the bottom (drum side was glossy and from the top side it was shiny.

Electron spin resonance signal from a tetra-interstitial defect in silicon

CERN Document Server

Mchedlidze, T

2003-01-01

The Si-B3 electron spin resonance (ESR) signal from agglomerates of self-interstitials was detected for the first time in hydrogen-doped float-zone-grown silicon samples subjected to annealing after electron irradiation. Previously this signal had been detected only in neutron- or proton-irradiated silicon samples. The absence of obscuring ESR peaks for the investigated samples at applied measurement conditions allowed an investigation of the hyperfine structure of the Si-B3 spectra. The analysis supports assignment of a tetra-interstitial defect as the origin of the signal.

Microstructure, mechanical and functional properties of NiTi-based shape memory ribbons

International Nuclear Information System (INIS)

Mehrabi, K.; Bruncko, M.; Kneissl, A.C.

2012-01-01

Highlights: ► Melt-spun samples exhibited martensite structure and shape memory effects immediately after processing at room temperature. ► Using a new etchant and interference contrast, it is possible to reveal the fine microstructures and grain boundaries. ► The martensite structure in NiTi is very fine, and nano-sized twin boundaries could be revealed using TEM only. ► Two-way effects have been successfully introduced by different thermomechanical training methods in NiTi, NiTiCu and NiTiW alloys, which can be used for several applications, e.g. microsensors and microactuators. - Abstract: The present work has been aimed to study the microstructures, functional properties and the influence of different thermomechanical training methods on the two-way shape memory effect in NiTi-based melt-spun ribbons. In order to get small-dimensioned shape memory alloys (SMAs) with good functional and mechanical properties, a rapid solidification technique was employed. Their fracture and elasticity characteristics have been determined, as well as shape memory properties by thermomechanical cycling. The ribbons were trained under tensile and bending deformation by thermal cycling through the phase transformation temperature range. The results displayed that all different training methods were effective in developing a two-way shape memory effect (TWSME). The influence of copper (5–25 at.% Cu) and tungsten (2 at.% W) on the microstructure, and the functional and mechanical behavior of NiTi thin ribbons was also investigated. All samples show a shape memory effect immediately after processing without further heat treatment. The melt-spun ribbons were trained under constant strain (bending and tensile deformation) by thermal cycling through the phase transformation temperature range. The addition of copper was effective to narrow the transformation hysteresis. The W addition has improved the TWSME stability of the NiTi alloys and mechanical properties. Results about

Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

International Nuclear Information System (INIS)

Jung, Y. J.; Kim, W. K.; Jung, J. H.

2014-01-01

The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

Energy Technology Data Exchange (ETDEWEB)

Jung, Y. J.; Kim, W. K.; Jung, J. H. [Yeungnam University, Gyeongsan (Korea, Republic of)

2014-08-15

The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

Megalencephaly, polymicrogyria and ribbon-like band heterotopia: A new cortical malformation.

Science.gov (United States)

Kobayashi, Yu; Magara, Shinichi; Okazaki, Kenichi; Komatsubara, Takao; Saitsu, Hirotomo; Matsumoto, Naomichi; Kato, Mitsuhiro; Tohyama, Jun

2016-11-01

Megalencephalic polymicrogyria syndromes include megalencephaly-capillary malformation and megalencephaly-polymicrogyria-polydactyly-hydrocephalus. Recent genetic studies have identified that genes in the PI3K-AKT pathway are involved in the pathogenesis of these disorders. Herein, we report a patient who presented with developmental delay, epilepsy and peculiar neuroimaging findings of megalencephaly, polymicrogyria, and symmetrical band heterotopia in the periventricular region. The heterotopias exhibited inhomogeneous signals with undulatory mixtures of gray and white matter, resembling ribbon-like heterotopia, with a predominance in the temporal to occipital regions. These neuroradiological findings were not consistent with those in known megalencephalic polymicrogyria syndromes. No genetic abnormality was identified through whole-exome sequencing. The neuroimaging findings of this patient may represent a novel cortical malformation involving megalencephaly with polymicrogyria and ribbon-like band heterotopia. Copyright © 2016 The Japanese Society of Child Neurology. Published by Elsevier B.V. All rights reserved.

Comparison of mechanical behavior between bulk and ribbon Cu-based metallic glasses

International Nuclear Information System (INIS)

Jiang, W.H.; Liu, F.X.; Wang, Y.D.; Zhang, H.F.; Choo, H.; Liaw, P.K.

2006-01-01

As-cast bulk and as-spun ribbon Cu 60 Zr 30 Ti 10 metallic glasses were characterized using differential-scanning calorimetry and instrumented nanoindentation. Two alloys show a significant difference in the amount of free volume, which is attributed to the difference in a cooling rate, while exhibiting a similar serrated plastic flow. Atomic-force-microscopy observations demonstrate the pile-ups containing shear bands around the indents in both alloys. The as-cast bulk alloy has higher hardness and elastic modulus than the as-spun ribbon alloy. The difference in the strengths of two alloys may be related to the different amount of free volume. The strength seems to be more sensitive to a cooling rate during solidification than the plastic-flow behavior in the Cu 60 Zr 30 Ti 10

Nanomechanical properties of SiC films grown from C{sub 60} precursors using atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Morse, K. [Colorado School of Mines, Golden, CO (United States); Balooch, M.; Hamza, A.V.; Belak, J. [Lawrence Livermore National Lab., CA (United States)

1994-12-01

The mechanical properties of SiC films grown via C{sub 60} precursors were determined using atomic force microscopy (AFM). Conventional silicon nitride and modified diamond cantilever AFM tips were employed to determine the film hardness, friction coefficient, and elastic modulus. The hardness is found to be between 26 and 40 GPa by nanoindentation of the film with the diamond tip. The friction coefficient for the silicon nitride tip on the SiC film is about one third that for silicon nitride sliding on a silicon substrate. By combining nanoindentation and AFM measurements an elastic modulus of {approximately}300 GPa is estimated for these SiC films. In order to better understand the atomic scale mechanisms that determine the hardness and friction of SiC, we simulated the molecular dynamics of a diamond indenting a crystalline SiC substrate.

Insitu CCVD grown bilayer graphene transistors for applications in nanoelectronics

International Nuclear Information System (INIS)

Wessely, Pia Juliane; Schwalke, Udo

2014-01-01

We invented a method to fabricate graphene field effect transistors (GFETs) on oxidized silicon wafers in a Silicon CMOS compatible process. The graphene layers needed are grown in situ by means of a transfer-free catalytic chemical vapor deposition (CCVD) process directly on silicon dioxide. Depending on the process parameters the fabrication of single, double or multi-layer graphene FETs (GFETs) is possible. The produced graphene layers have been characterized by SEM, TEM, TEM-lattice analysis as well as Raman-Spectroscopy. Directly after growth, the fabricated GFETs are electrically functional and can be electrically characterized via the catalyst metals which are used as contact electrodes. In contrast to monolayer graphene FETs, the fabricated bilayer graphene FETs (BiLGFETs) exhibit unipolar p-type MOSFET behavior. Furthermore, the on/off current-ratio of 10 4 up to several 10 7 at room temperature of the fabricated BiLGFETs allows their use in digital logic applications [1]. In addition, a stable hysteresis of the GFETs enables their use as memory devices without the need of storage capacitors and therefore very high memory device-densities are possible. The whole fabrication process is fully Si-CMOS compatible, enabling the use of hybrid silicon/graphene electronics.

The discovery of 9/8-ribbons, β/γ-peptides with curved shapes governed by a combined configuration-conformation code.

Science.gov (United States)

Grison, Claire M; Robin, Sylvie; Aitken, David J

2015-11-21

The de novo design of a β/γ-peptidic foldamer motif has led to the discovery of an unprecedented 9/8-ribbon featuring an uninterrupted alternating C9/C8 hydrogen-bonding network. The ribbons adopt partially curved topologies determined synchronistically by the β-residue configuration and the γ-residue conformation sets.

Effects of Zr on microstructure and mechanical properties of Al-Cu base ribbons spun by planar flow casting

Science.gov (United States)

Lee, S. M.; Hong, C. P.

1998-04-01

The effects of the Zr addition on the solidification behavior and mechanical properties of the AI-Cu alloy ribbon have been investigated. Zr addition reduced the average grain size of the ribbon at the wheel-side surface, and promoted the microstructural transition into cellular/dendritic structure. Another noteworthy effect of Zr was the homogenization of the microstructure. The addition of Zr up to 0.5 wt.% in the /U-4.3 wt.% Cu ribbon resulted in a considerable increase in hardness at both the wheel-side and the air-side surfaces. The yield strength increased with the addition of Zr due to the grain refincment and more homogeneous distribution of ZrAI, particles. despite no noticeable improvement of the ductility.

InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

Science.gov (United States)

Bru-Chevallier, C; El Akra, A; Pelloux-Gervais, D; Dumont, H; Canut, B; Chauvin, N; Regreny, P; Gendry, M; Patriarche, G; Jancu, J M; Even, J; Noe, P; Calvo, V; Salem, B

2011-10-01

The aim of this study is to achieve homogeneous, high density and dislocation free InGaAs quantum dots grown by molecular beam epitaxy for light emission on silicon substrates. This work is part of a project which aims at overcoming the severe limitation suffered by silicon regarding its optoelectronic applications, especially efficient light emission device. For this study, one of the key points is to overcome the expected type II InGaAs/Si interface by inserting the InGaAs quantum dots inside a thin silicon quantum well in SiO2 fabricated on a SOI substrate. Confinement effects of the Si/SiO2 quantum well are expected to heighten the indirect silicon bandgap and then give rise to a type I interface with the InGaAs quantum dots. Band structure and optical properties are modeled within the tight binding approximation: direct energy bandgap is demonstrated in SiO2/Si/InAs/Si/SiO2 heterostructures for very thin Si layers and absorption coefficient is calculated. Thinned SOI substrates are successfully prepared using successive etching process resulting in a 2 nm-thick Si layer on top of silica. Another key point to get light emission from InGaAs quantum dots is to avoid any dislocations or defects in the quantum dots. We investigate the quantum dot size distribution, density and structural quality at different V/III beam equivalent pressure ratios, different growth temperatures and as a function of the amount of deposited material. This study was performed for InGaAs quantum dots grown on Si(001) substrates. The capping of InGaAs quantum dots by a silicon epilayer is performed in order to get efficient photoluminescence emission from quantum dots. Scanning transmission electronic microscopy images are used to study the structural quality of the quantum dots. Dislocation free In50Ga50As QDs are successfully obtained on a (001) silicon substrate. The analysis of QDs capped with silicon by Rutherford Backscattering Spectrometry in a channeling geometry is also presented.

Orientation and Morphology Effects in Rapid Silicon Sheet Solidification

Science.gov (United States)

Ciszek, T. F.

1984-01-01

Radial growth anisotropies and equilibrium forms of point nucleated, dislocation free silicon sheets spreading horizontally on the free surface of a silicon melt were measured for (100), (110), (111), and (112) sheet planes. The growth process was recorded. Qualitative Wulff surface free energy polar plots were deduced from the equilibrium shapes for each sheet plane. Predicted geometries for the tip shape of unidirectional, dislocation free, horizontally grown sheets growing in various directions within the planes were analyzed. Polycrystalline sheets and dendrite propagation were analyzed. For dendrites, growth rates on the order of 2.5 m/min and growth rate anisotropies of 25 are measured.

III–V quantum light source and cavity-QED on Silicon

Science.gov (United States)

Luxmoore, I. J.; Toro, R.; Pozo-Zamudio, O. Del; Wasley, N. A.; Chekhovich, E. A.; Sanchez, A. M.; Beanland, R.; Fox, A. M.; Skolnick, M. S.; Liu, H. Y.; Tartakovskii, A. I.

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III–V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III–V material grown directly on silicon substrates. The high quality of the III–V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems. PMID:23393621

III-V quantum light source and cavity-QED on silicon.

Science.gov (United States)

Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

Laser based thermo-conductometry as an approach to determine ribbon solid fraction off-line and in-line.

Science.gov (United States)

Wiedey, Raphael; Šibanc, Rok; Kleinebudde, Peter

2018-06-06

Ribbon solid fraction is one of the most important quality attributes during roll compaction/dry granulation. Accurate and precise determination is challenging and no in-line measurement tool has been generally accepted, yet. In this study, a new analytical tool with potential off-line as well as in-line applicability is described. It is based on the thermo-conductivity of the compacted material, which is known to depend on the solid fraction. A laser diode was used to punctually heat the ribbon and the heat propagation monitored by infrared thermography. After performing a Gaussian fit of the transverse ribbon profile, the scale parameter σ showed correlation to ribbon solid fraction in off-line as well as in-line studies. Accurate predictions of the solid fraction were possible for a relevant range of process settings. Drug stability was not affected, as could be demonstrated for the model drug nifedipine. The application of this technique was limited when using certain fillers and working at higher roll speeds. This study showed the potentials of this new technique and is a starting point for additional work that has to be done to overcome these challenges. Copyright © 2018 Elsevier B.V. All rights reserved.

Glassy formation ability, magnetic properties and magnetocaloric effect in Al27Cu18Er55 amorphous ribbon

Science.gov (United States)

Li, Lingwei; Xu, Chi; Yuan, Ye; Zhou, Shengqiang

2018-05-01

In this work, we have fabricated the Al27Cu18Er55 amorphous ribbon with good glassy formation ability by melt-spinning technology. A broad paramagnetic (PM) to ferromagnetic (FM) transition (second ordered) together with a large reversible magnetocaloric effect (MCE) in Al27Cu18Er55 amorphous ribbon was observed around the Curie temperature TC ∼ 11 K. Under the magnetic field change (ΔH of 0-7 T, the values of MCE parameter of the maximum magnetic entropy change (-ΔSMmax) and refrigerant capacity (RC) for Al27Cu18Er55 amorphous ribbon reach 21.4 J/kg K and 599 J/kg, respectively. The outstanding glass forming ability as well as the excellent magneto-caloric properties indicate that Al27Cu18Er55 amorphous could be a good candidate for low temperature magnetic refrigeration.

Template synthesis and characterization of nanostructured hierarchical mesoporous ribbon-like NiO as high performance electrode material for supercapacitor

International Nuclear Information System (INIS)

Yao, Mingming; Hu, Zhonghua; Xu, Zijie; Liu, Yafei; Liu, Peipei; Zhang, Qiang

2015-01-01

The ribbon-like NiO was synthesized by a hard-template method combining the calcination, using mesoporous carbon as a hard templat and guanidine hydrochloride as precipitant of weak base, respectively. The nanostructured hierarchical mesoporous ribbon-like NiO exhibits the high specific capacitance of 1260 F g −1 at the current density of 1 A g −1 , and 95% capacity retention at a current density of 10 A g −1 in a testing range of 5000 cycles. - Highlights: • Ribbon-like NiO was prepared by using mesoporous carbon as a hard template. • Typical ribbon-like NiO possesses the hierarchical mesoporous nanostructure. • High specific capacitance of 1260 F g −1 is obtained at a current density of 1 A g −1 . • Excellent electrochemical stability of 95% after 5000 charge–discharge cycles. - Abstract: In this paper, nanostructured hierarchical mesoporous ribbon-like NiO was synthesized by a hard-template method combining the calcination process. Nickel sulfate hexahydrate, guanidine hydrochloride and mesoporous carbon were used as nickel precursors, precipitant of weak base and template, respectively. The resultant NiO samples were characterized by Raman spectroscopy, energy dispersive spectrometer, X-ray diffraction, N 2 adsorption and desorption, scanning electron microscopy and transmission electron microscopy. The electrochemical performances were evaluated by cyclic voltammetry (CV), cyclic chronopotentiometry (CP) and electrochemical impedance spectroscopy (EIS) in 6 M KOH solution. The typical hierarchical mesoporous ribbon-like NiO shows a good electrochemical performance: a high specific capacitance of 1260 F g −1 at 1 A g −1 , 748 F g −1 at high current density of 20 A g −1 and 95% capacity retention at a current density of 10 A g −1 in a testing range of 5000 cycles

Random anisotropy studies in amorphous Co-Tb ribbons

International Nuclear Information System (INIS)

Hassanain, N.; Berrada, A.; Lassri, H.; Krishnan, R.

1995-01-01

Amorphous Co 1-x Tb x ribbons with x=0.45, 0.55 and 0.65 have been prepared by melt spinning technique. Magnetization measurements were carried out at 4.2 K, under magnetic fields up to 150 kOe. The Co moment is found to be very small and the Tb moment is 7.15μ B at 4.2 K, which indicates a speromagnetic spin structure. Using Chudnovsky's theory we have extracted some fundamental magnetic parameters. ((orig.))

Random anisotropy studies in amorphous CoTb ribbons

Science.gov (United States)

Hassanain, N.; Berrada, A.; Lassri, H.; Krishnan, R.

1995-02-01

Amorphous Co 1- xTb x ribbons with x = 0.45, 0.55 and 0.65 have been prepared by melt spinning technique. Magnetization measurements were carried out at 4.2 K, under magnetic fields up to 150 kOe. The Co moment is found to be very small and the Tb moment is 7.15 μB at 4.2 K, which indicates a speromagnetic spin structure. Using Chudnovsky's theory we have extracted some fundamental magnetic parameters.

Evaluation of bonding between oxygen plasma treated polydimethyl siloxane and passivated silicon

Energy Technology Data Exchange (ETDEWEB)

Tang, K C [Bioelectronics/BioMEMS Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Liao, E [Semiconductor Process Technologies Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Ong, W L [Bioelectronics/BioMEMS Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Wong, J D S [Semiconductor Process Technologies Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Agarwal, A [Bioelectronics/BioMEMS Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Nagarajan, R [Semiconductor Process Technologies Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Yobas, L [Bioelectronics/BioMEMS Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore)

2006-04-01

Oxygen plasma treatment has been used extensively to bond polydimethyl siloxane to polydimethyl siloxane or glass in the rapid prototyping of microfluidic devices. This study aimed to improve the bonding quality of polydimethyl siloxane to passivated silicon using oxygen plasma treatment, and also to evaluate the bonding quality. Four types of passivated silicon were used: phosphosilicate glass, undoped silicate glass, silicon nitride and thermally grown silicon dioxide. Bonding strength was evaluated qualitatively and quantitatively using manual peel and mechanical shear tests respectively. Through peel tests we found that the lowering of plasma pressure from 500 to 30 mTorr and using a plasma power between 20 to 60 W helped to improve the bond quality for the first three types of passivation. Detailed analysis and discussion were conducted to explain the discrepancy between the bonding strength results and peeling results. Our results suggested that polydimethyl siloxane can be effectively bonded to passivated silicon, just as to polydimethyl siloxane or glass.

VV and VO2 defects in silicon studied with hybrid density functional theory

KAUST Repository

Christopoulos, Stavros Richard G; Wang, Hao; Chroneos, Alexander I.; Londos, Charalampos A.; Sgourou, Efstratia N.; Schwingenschlö gl, Udo

2014-01-01

The formation of VO (A-center), VV and VO2 defects in irradiated Czochralski-grown silicon (Si) is of technological importance. Recent theoretical studies have examined the formation and charge states of the A-center in detail. Here we use density

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Brett Hallam

2017-12-01

Full Text Available This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

Effect of wheel speed on magnetic and mechanical properties of melt spun Fe-6.5 wt.% Si high silicon steel

Science.gov (United States)

Ouyang, Gaoyuan; Jensen, Brandt; Tang, Wei; Dennis, Kevin; Macziewski, Chad; Thimmaiah, Srinivasa; Liang, Yongfeng; Cui, Jun

2018-05-01

Fe-Si electric steel is the most widely used soft magnetic material in electric machines and transformers. Increasing the silicon content from 3.2 wt.% to 6.5 wt.% brings about large improvement in the magnetic and electrical properties. However, 6.5 wt.% silicon steel is inherited with brittleness owing to the formation of B2 and D03 ordered phase. To obtain ductility in Fe-6.5wt.% silicon steel, the ordered phase has to be bypassed with methods like rapid cooling. In present paper, the effect of cooling rate on magnetic and mechanical properties of Fe-6.5wt.% silicon steel is studied by tuning the wheel speed during melt spinning process. The cooling rate significantly alters the ordering and microstructure, and thus the mechanical and magnetic properties. X-ray diffraction data shows that D03 ordering was fully suppressed at high wheel speeds but starts to nucleate at 10m/s and below, which correlates with the increase of Young's modulus towards low wheel speeds as tested by nanoindentation. The grain sizes of the ribbons on the wheel side decrease with increasing wheel speeds, ranging from ˜100 μm at 1m/s to ˜8 μm at 30m/s, which lead to changes in coercivity.

Surface plasmon enhanced absorption and suppressed transmission in periodic arrays of graphene ribbons

Science.gov (United States)

Nikitin, A. Yu.; Guinea, F.; Garcia-Vidal, F. J.; Martin-Moreno, L.

2012-02-01

Resonance diffraction in the periodic array of graphene microribbons is theoretically studied following a recent experiment [L. Ju , Nature Nanotech.1748-338710.1038/nnano.2011.146 6, 630 (2011)]. Systematic studies over a wide range of parameters are presented. It is shown that a much richer resonant picture would be observable for higher relaxation times of charge carriers: More resonances appear and transmission can be totally suppressed. The comparison with the absorption cross-section of a single ribbon shows that the resonant features of the periodic array are associated with leaky plasmonic modes. The longest-wavelength resonance provides the highest visibility of the transmission dip and has the strongest spectral shift and broadening with respect to the single-ribbon resonance, due to collective effects.

Thermal Conductivity of Graphene-hBN Superlattice Ribbons.

Science.gov (United States)

Felix, Isaac M; Pereira, Luiz Felipe C

2018-02-09

Superlattices are ideal model systems for the realization and understanding of coherent (wave-like) and incoherent (particle-like) phonon thermal transport. Single layer heterostructures of graphene and hexagonal boron nitride have been produced recently with sharp edges and controlled domain sizes. In this study we employ nonequilibrium molecular dynamics simulations to investigate the thermal conductivity of superlattice nanoribbons with equal-sized domains of graphene and hexagonal boron nitride. We analyze the dependence of the conductivity with the domain sizes, and with the total length of the ribbons. We determine that the thermal conductivity reaches a minimum value of 89 W m -1 K -1 for ribbons with a superlattice period of 3.43 nm. The effective phonon mean free path is also determined and shows a minimum value of 32 nm for the same superlattice period. Our results also reveal that a crossover from coherent to incoherent phonon transport is present at room temperature for BNC nanoribbons, as the superlattice period becomes comparable to the phonon coherence length. Analyzing phonon populations relative to the smallest superlattice period, we attribute the minimum thermal conductivity to a reduction in the population of flexural phonons when the superlattice period equals 3.43 nm. The ability to manipulate thermal conductivity using superlattice-based two-dimensional materials, such as graphene-hBN nanoribbons, opens up opportunities for application in future nanostructured thermoelectric devices.

Student Evaluation of the Yellow Ribbon Suicide Prevention Program in Midwest Schools

Science.gov (United States)

Flynn, Alexandra; Zackula, Rosalee; Klaus, Nicole M.; McGinness, Liz; Carr, Susan; Macaluso, Matthew

2016-01-01

Objective Yellow Ribbon is a gatekeeper-type suicide prevention program that is widely used in public schools. However, data on its effectiveness are limited. The purpose of our study was to evaluate self-reported changes in knowledge and comfort level communicating about suicide following Yellow Ribbon training for a large, representative sample of students from a public school system in the midwestern United States. Methods The program was administered to students within the same school district during 2006 through 2009. A pre-post survey using a 4-point Likert scale was administered to rate students’ knowledge of risk factors and available resources, comfort level communicating about suicide, estimate of friends at risk for suicide, and behavioral intent toward help-seeking. Results Aggregate responses from 3,257 students, aged 11 to 18 years, were collected by the schools; 51% were female, 33% were Hispanic, and 30% were white. Suicide-related knowledge of risk factors, where to go for help, and resources, along with comfort level in asking for help, all significantly improved following program participation (Cramer’s V = 0.243 to 0.376, P suicide prevention program appears to be beneficial for students in the midwestern United States. We observed significant improvement in knowledge, comfort level, and behavioral intent for help-seeking if suicidal thoughts occur. Findings also suggested that Yellow Ribbon training administered during middle school may be especially helpful for males. PMID:27733952

Lifetime degradation of n-type Czochralski silicon after hydrogenation

Science.gov (United States)

Vaqueiro-Contreras, M.; Markevich, V. P.; Mullins, J.; Halsall, M. P.; Murin, L. I.; Falster, R.; Binns, J.; Coutinho, J.; Peaker, A. R.

2018-04-01

Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys. Status Solidi RRL 11, 1700133 (2017)] that hydrogenation of n-type silicon slices containing relatively large concentrations of carbon and oxygen impurity atoms {[Cs] ≥ 1 × 1016 cm-3 and [Oi] ≥ 1017 cm-3} can produce a family of C-O-H defects, which act as powerful recombination centres reducing the minority carrier lifetime. In this work, evidence of the silicon's lifetime deterioration after hydrogen injection from SiNx coating, which is widely used in solar cell manufacturing, has been obtained from microwave photoconductance decay measurements. We have characterised the hydrogenation induced deep level defects in n-type Czochralski-grown Si samples through a series of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), and high-resolution Laplace DLTS/MCTS measurements. It has been found that along with the hydrogen-related hole traps, H1 and H2, in the lower half of the gap reported by us previously, hydrogenation gives rise to two electron traps, E1 and E2, in the upper half of the gap. The activation energies for electron emission from the E1 and E2 trap levels have been determined as 0.12, and 0.14 eV, respectively. We argue that the E1/H1 and E2/H2 pairs of electron/hole traps are related to two energy levels of two complexes, each incorporating carbon, oxygen, and hydrogen atoms. Our results show that the detrimental effect of the C-O-H defects on the minority carrier lifetime in n-type Si:O + C materials can be very significant, and the carbon concentration in Czochralski-grown silicon is a key parameter in the formation of the recombination centers.

Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

Energy Technology Data Exchange (ETDEWEB)

Yablonsky, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Morozov, S. V.; Gaponova, D. M.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Shengurov, V. G.; Zvonkov, B. N.; Vikhrova, O. V.; Baidus’, N. V. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Krasil’nik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2016-11-15

We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.

Heteroepitaxially grown InP solar cells

International Nuclear Information System (INIS)

Weinberg, I.; Swartz, C.K.; Brinker, D.J.; Wilt, D.M.

1990-01-01

Although they are significantly more radiation resistant than either Si or GaAs solar cells, their high wafer cost presents a barrier to the widespread use of InP solar cells in space. For this reason, the authors have initiated a program aimed at producing high efficiency, radiation resistant solar cells processed from InP heteroepitaxially grown on cheaper substrates. The authors' objective is to present the most recent results emanating from this program together with the results of their initial proton irradiations on these cells. This paper reports that InP cells were processed from a 4 micron layer of InP, grown by OMCVD on a silicon substrate, with a 0.5 micron buffer layer between the InP directly grown on a GaAs substrate. Initial feasibility studies, in a Lewis sponsored program at the Spire corporation, resulted in air mass zero efficiencies of 7.1% for the former cells and 9.1% for the latter. These initial low efficiencies are attributed to the high dislocation densities caused by lattice mismatch. The authors' preirradiation analysis indicates extremely low minority carrier diffusion lengths, in both cell base and emitter, and high values of both the diffusion and recombination components of the diode reverse saturation currents. Irradiation by 10 MeV protons, to a fluence of 10 13 cm -2 , resulted in relatively low degradation in cell efficiency, short circuit current and open circuit voltage

Effect of silicon on wheat seedlings (Triticum turgidum L.) grown in hydroponics and exposed to 0 to 30 µM Cu.

Science.gov (United States)

Keller, C; Rizwan, M; Davidian, J-C; Pokrovsky, O S; Bovet, N; Chaurand, P; Meunier, J-D

2015-04-01

Aqueous Si limits Cu uptake by a Si-accumulating plant via physicochemical mechanisms occurring at the root level. Sufficient Si supply may alleviate Cu toxicity in Cu-contaminated soils. Little information is available on the role of silicon (Si) in copper (Cu) tolerance while Cu toxicity is widespread in crops grown on Cu-contaminated soils. A hydroponic study was set up to investigate the influence of Si on Cu tolerance in durum wheat (Triticum turgidum L.) grown in 0, 0.7, 7.0 and 30 µM Cu without and with 1.0 mM Si, and to identify the mechanisms involved in mitigation of Cu toxicity. Si supply alleviated Cu toxicity in durum wheat at 30 µM Cu, while Cu significantly increased Si concentration in roots. Root length, photosynthetic pigments concentrations, macroelements, and organic anions (malate, acetate and aconitate) in roots, were also increased. Desorption experiments, XPS analysis of the outer thin root surface (≤100 Å) and µXRF analyses showed that Si increased adsorption of Cu at the root surface as well as Cu accumulation in the epidermis while Cu was localised in the central cylinder when Si was not applied. Copper was not detected in phytoliths. This study provides evidences for Si-mediated alleviation of Cu toxicity in durum wheat. It also shows that Si supplementation to plants exposed to increasing levels of Cu in solution induces non-simultaneous changes in physiological parameters. We propose a three-step mechanism occurring mainly at the root level and limiting Cu uptake and translocation to shoots: (i) increased Cu adsorption onto the outer thin layer root surface and immobilisation in the vicinity of root epidermis, (ii) increased Cu complexation by both inorganic and organic anions such as aconitate and, (iii) limitation of translocation through an enhanced thickening of a Si-loaded endodermis.

Growth of carbon nanotubes by Fe-catalyzed chemical vapor processes on silicon-based substrates

Science.gov (United States)

Angelucci, Renato; Rizzoli, Rita; Vinciguerra, Vincenzo; Fortuna Bevilacqua, Maria; Guerri, Sergio; Corticelli, Franco; Passini, Mara

2007-03-01

In this paper, a site-selective catalytic chemical vapor deposition synthesis of carbon nanotubes on silicon-based substrates has been developed in order to get horizontally oriented nanotubes for field effect transistors and other electronic devices. Properly micro-fabricated silicon oxide and polysilicon structures have been used as substrates. Iron nanoparticles have been obtained both from a thin Fe film evaporated by e-gun and from iron nitrate solutions accurately dispersed on the substrates. Single-walled nanotubes with diameters as small as 1 nm, bridging polysilicon and silicon dioxide “pillars”, have been grown. The morphology and structure of CNTs have been characterized by SEM, AFM and Raman spectroscopy.

Development of variable-width ribbon heating elements for liquid-metal and gas-cooled fast breeder reactor fuel-pin simulators

International Nuclear Information System (INIS)

McCulloch, R.W.; Post, D.W.; Lovell, R.T.; Snyder, S.D.

1981-04-01

Variable-width ribbon heating elements that provide a chopped-cosine variable heat flux profile have been fabricated for fuel pin simulators used in test loops by the Breeder Reactor Program Thermal-Hydraulic Out-of-Reactor Safety test facility and the Gas-Cooled Fast Breeder Reactor-Core Flow Test Loop. Thermal, mechanical, and electrical design considerations are used to derive an analytical expression that precisely describes ribbon contour in terms of the major fabrication parameters. These parameters are used to generate numerical control tapes that control ribbon cutting and winding machines. Infrared scanning techniques are developed to determine the optimum transient thermal profile of the coils and relate this profile to that generated by the coils in completed fuel pin simulators

Radiation hardness of silicon detectors manufactured on wafers from various sources

International Nuclear Information System (INIS)

Dezillie, B.; Bates, S.; Glaser, M.; Lemeilleur, F.; Leroy, C.

1997-01-01

Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depletion voltage of FZ and epitaxial detectors as a function of fluence and of time after 10 14 cm -2 proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented. (orig.)

Boron, phosphorus, and gallium determination in silicon crystals doped with gallium

International Nuclear Information System (INIS)

Shklyar, B.L.; Dankovskij, Yu.V.; Trubitsyn, Yu.V.

1989-01-01

When studying IR transmission spectra of silicon doped with gallium in the range of concentrations 1 x 10 14 - 5 x 10 16 cm -3 , the possibility to quantity at low (∼ 20 K) temperatures residual impurities of boron and phosphorus is ascertained. The lower determination limit of boron is 1 x 10 12 cm -3 for a sample of 10 nm thick. The level of the impurities in silicon crystals, grown by the Czochralski method and method of crucible-free zone melting, is measured. Values of boron and phosphorus concentrations prior to and after their alloying with gallium are compared

Upgraded metallurgical-grade silicon solar cells with efficiency above 20%

Energy Technology Data Exchange (ETDEWEB)

Zheng, P.; Rougieux, F. E.; Samundsett, C.; Yang, Xinbo; Wan, Yimao; Macdonald, D. [Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Terrritory 2601 (Australia); Degoulange, J.; Einhaus, R. [Apollon Solar, 66 Cours Charlemagne, Lyon 69002 (France); Rivat, P. [FerroPem, 517 Avenue de la Boisse, Chambery Cedex 73025 (France)

2016-03-21

We present solar cells fabricated with n-type Czochralski–silicon wafers grown with strongly compensated 100% upgraded metallurgical-grade feedstock, with efficiencies above 20%. The cells have a passivated boron-diffused front surface, and a rear locally phosphorus-diffused structure fabricated using an etch-back process. The local heavy phosphorus diffusion on the rear helps to maintain a high bulk lifetime in the substrates via phosphorus gettering, whilst also reducing recombination under the rear-side metal contacts. The independently measured results yield a peak efficiency of 20.9% for the best upgraded metallurgical-grade silicon cell and 21.9% for a control device made with electronic-grade float-zone silicon. The presence of boron-oxygen related defects in the cells is also investigated, and we confirm that these defects can be partially deactivated permanently by annealing under illumination.

Effect of power on the growth of nanocrystalline silicon films

International Nuclear Information System (INIS)

Kumar, Sushil; Dixit, P N; Rauthan, C M S; Parashar, A; Gope, Jhuma

2008-01-01

Nanocrystalline silicon thin films were grown using a gaseous mixture of silane, hydrogen and argon in a plasma-enhanced chemical vapor deposition system. These films were deposited away from the conventional low power regime normally used for the deposition of device quality hydrogenated amorphous silicon films. It was observed that, with the increase of applied power, there is a change in nanocrystalline phases which were embedded in the amorphous matrix of silicon. Atomic force microscopy micrographs show that these films contain nanocrystallite of 20-100 nm size. Laser Raman and photoluminescence peaks have been observed at 514 cm -1 and 2.18 eV, respectively, and particle sizes were estimated using the same as 8.24 nm and 3.26 nm, respectively. It has also been observed that nanocrystallites in these films enhanced the optical bandgap and electrical conductivity

Effect of power on the growth of nanocrystalline silicon films

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sushil; Dixit, P N; Rauthan, C M S; Parashar, A; Gope, Jhuma [Plasma Processed Materials Group, National Physical Laboratory, Dr K S Krishnan Road, New Delhi 110 012 (India)], E-mail: skumar@mail.nplindia.ernet.in

2008-08-20

Nanocrystalline silicon thin films were grown using a gaseous mixture of silane, hydrogen and argon in a plasma-enhanced chemical vapor deposition system. These films were deposited away from the conventional low power regime normally used for the deposition of device quality hydrogenated amorphous silicon films. It was observed that, with the increase of applied power, there is a change in nanocrystalline phases which were embedded in the amorphous matrix of silicon. Atomic force microscopy micrographs show that these films contain nanocrystallite of 20-100 nm size. Laser Raman and photoluminescence peaks have been observed at 514 cm{sup -1} and 2.18 eV, respectively, and particle sizes were estimated using the same as 8.24 nm and 3.26 nm, respectively. It has also been observed that nanocrystallites in these films enhanced the optical bandgap and electrical conductivity.

Linear electro-optic effect in cubic silicon carbide

Science.gov (United States)

Tang, Xiao; Irvine, Kenneth G.; Zhang, Dongping; Spencer, Michael G.

1991-01-01

The first observation is reported of the electrooptic effect of cubic silicon carbide (beta-SiC) grown by a low-pressure chemical vapor deposition reactor using the hydrogen, silane, and propane gas system. At a wavelength of 633 nm, the value of the electrooptic coefficient r41 in beta-SiC is determined to be 2.7 +/- 0.5 x 10 (exp-12) m/V, which is 1.7 times larger than that in gallium arsenide measured at 10.6 microns. Also, a half-wave voltage of 6.4 kV for beta-SiC is obtained. Because of this favorable value of electrooptic coefficient, it is believed that silicon carbide may be a promising candidate in electrooptic applications for high optical intensity in the visible region.

High efficiency thin film solar cells grown by molecular beam epitaxy (HEFTY)

Energy Technology Data Exchange (ETDEWEB)

Mason, N.B.; Barnham, K.W.J.; Ballard, I.M.; Zhang, J. [Imperial College, London (United Kingdom)

2006-05-04

The project sought to show the UK as a world leader in the field of thin film crystalline solar cells. A premise was that the cell design be suitable for large-scale manufacturing and provide a basis for industrial exploitation. The study demonstrated (1) that silicon films grown at temperatures suitable for deposition on glass by Gas Phase Molecular Beam Epitaxy gives better PV cells than does Ultra Low Pressure Chemical Vapor Deposition; (2) a conversion energy of 15 per cent was achieved - the project target was 18 per cent and (3) one of the highest reported conversion efficiencies for a 15 micrometre silicon film was achieved. The study was carried out by BP Solar Limited under contract to the DTI.

A TWO-RIBBON WHITE-LIGHT FLARE ASSOCIATED WITH A FAILED SOLAR ERUPTION OBSERVED BY ONSET, SDO, AND IRIS

International Nuclear Information System (INIS)

Cheng, X.; Hao, Q.; Ding, M. D.; Chen, P. F.; Fang, C.; Liu, K.; Liu, Y. D.

2015-01-01

Two-ribbon brightenings are one of the most remarkable characteristics of an eruptive solar flare and are often used to predict the occurrence of coronal mass ejections (CMEs). Nevertheless, it was recently called into question whether all two-ribbon flares are eruptive. In this paper, we investigate a two-ribbon-like white-light (WL) flare that is associated with a failed magnetic flux rope (MFR) eruption on 2015 January 13, which has no accompanying CME in the WL coronagraph. Observations by the Optical and Near-infrared Solar Eruption Tracer and the Solar Dynamics Observatory reveal that with the increase of the flare emission and the acceleration of the unsuccessfully erupting MFR, two isolated kernels appear at the WL 3600 Å passband and quickly develop into two elongated ribbon-like structures. The evolution of the WL continuum enhancement is completely coincident in time with the variation of Fermi hard X-ray 26–50 keV flux. An increase of continuum emission is also clearly visible at the whole FUV and NUV passbands observed by the Interface Region Imaging Spectrograph. Moreover, in one WL kernel, the Si iv, C ii, and Mg ii h/k lines display significant enhancement and non-thermal broadening. However, their Doppler velocity pattern is location-dependent. At the strongly bright pixels, these lines exhibit a blueshift, while at moderately bright ones, the lines are generally redshifted. These results show that the failed MFR eruption is also able to produce a two-ribbon flare and high-energy electrons that heat the lower atmosphere, causing the enhancement of the WL and FUV/NUV continuum emissions and chromospheric evaporation

Assessment on thermoelectric power factor in silicon nanowire networks

Energy Technology Data Exchange (ETDEWEB)

Lohn, Andrew J.; Kobayashi, Nobuhiko P. [Baskin School of Engineering, University of California Santa Cruz, CA (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz, NASA Ames Research Center, Moffett Field, CA (United States); Coleman, Elane; Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, NJ (United States)

2012-01-15

Thermoelectric devices based on three-dimensional networks of highly interconnected silicon nanowires were fabricated and the parameters that contribute to the power factor, namely the Seebeck coefficient and electrical conductivity were assessed. The large area (2 cm x 2 cm) devices were fabricated at low cost utilizing a highly scalable process involving silicon nanowires grown on steel substrates. Temperature dependence of the Seebeck coefficient was found to be weak over the range of 20-80 C at approximately -400 {mu}V/K for unintentionally doped devices and {+-}50 {mu}V/K for p-type and n-type devices, respectively. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications

Science.gov (United States)

Lourdudoss, Sebastian; Junesand, Carl; Kataria, Himanshu; Metaferia, Wondwosen; Omanakuttan, Giriprasanth; Sun, Yan-Ting; Wang, Zhechao; Olsson, Fredrik

2017-02-01

We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.

Generation of second harmonic in off-diagonal magneto-impedance in Co-based amorphous ribbons

International Nuclear Information System (INIS)

Buznikov, N A; Yoon, S S; Jin, L; Kim, C O; Kim, C G

2006-01-01

The off-diagonal magneto-impedance in Co-based amorphous ribbons was measured using a pick-up coil wound around the sample. The ribbons were annealed in air or in vacuum in the presence of a weak magnetic field. The evolution of the first and second harmonics in the pick-up coil voltage as a function of the current amplitude was studied. At low current amplitudes, the first harmonic dominates in the frequency spectrum of the voltage, and at sufficiently high current amplitudes, the amplitude of the second harmonic becomes higher than that of the first harmonic. For air-annealed ribbons, the asymmetric two-peak behaviour of the field dependences of the harmonic amplitudes was observed, which is related to the coupling between the amorphous phase and surface crystalline layers appearing after annealing. For vacuum-annealed samples, the first harmonic has a maximum at zero external field, and the field dependence of the second harmonic exhibits symmetric two-peak behaviour. The experimental results are interpreted in terms of a quasi-static rotational model. It is shown that the appearance of the second harmonic in the pick-up coil voltage is related to the anti-symmetrical distribution of the transverse field induced by the current. The calculated dependences are in qualitative agreement with the experimental data

Low-temperature epitaxy of silicon by electron beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Gorka, B. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany); Dogan, P. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany)], E-mail: pinar.dogan@hmi.de; Sieber, I.; Fenske, F.; Gall, S. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany)

2007-07-16

In this paper we report on homoepitaxial growth of thin Si films at substrate temperatures T{sub s} = 500-650 deg. C under non-ultra-high vacuum conditions by using electron beam evaporation. Si films were grown at high deposition rates on monocrystalline Si wafers with (100), (110) and (111) orientations. The ultra-violet visible reflectance spectra of the films show a dependence on T{sub s} and on the substrate orientation. To determine the structural quality of the films in more detail Secco etch experiments were carried out. No etch pits were found on the films grown on (100) oriented wafers. However, on films grown on (110) and (111) oriented wafers different types of etch pits could be detected. Films were also grown on polycrystalline silicon (poly-Si) seed layers prepared by an Aluminum-Induced Crystallisation (AIC) process on glass substrates. Electron Backscattering Diffraction (EBSD) shows that the film growth proceeds epitaxially on the grains of the seed layer. But a considerably higher density of extended defects is revealed by Secco etch experiments.

Salt stress and exogenous silicon influence physiological and anatomical features of in vitro-grown cape gooseberry

Directory of Open Access Journals (Sweden)

Renata Alves Lara Silva Rezende

2017-04-01

Full Text Available ABSTRACT: Salt stress is one of several major abiotic stresses that affect plant growth and development, and there are many evidences that silicon can ameliorate the injuries caused by high salinity. This study presents the results of an assay concerning: (1 the effect of in vitro NaCl-induced salt stress in cape gooseberry plants and (2 the possible mitigating effect of silicon in saline conditions. For that, nodal segments were inoculated in Murashige and Skoog (MS medium under salinity (0.5 and 1.0% NaCl with different silicic acid concentrations (0, 0.5 and 1.0g L-1. Phytotechnical characteristics, photosynthetic pigments content, and leaf anatomy were evaluated after 30 days. Shoot length, root length, number of leaves and buds, fresh and dry weight, pigment content, stomatal density and leaf blade thickness were drastically reduced by increased salt level. The supply of silicon (1.0g L-1 has successfully mitigated the effect of salinity at 0.5% NaCl for chlorophyll, carotenoids, stomatal density and leaf blade thickness. When salt stress was about 1.0%, Si was not effective anymore. In conclusion, we affirmed that, in in vitro conditions, salt stress is harmful for cape gooseberry plants and the addition of silicon showed effective in mitigating the saline effects of some features.

Mössbauer and Kerr microscopy investigation of crystallization in FeCoB ribbons

Energy Technology Data Exchange (ETDEWEB)

Reddy, V. Raghavendra, E-mail: varimalla@yahoo.com, E-mail: vrreddy@csr.res.in; Hussain, Zaineb; Babu, Hari [UGC DAE Consortium for Scientific Research, University Campus, Kandhwa Road, Indore-452001 India (India); Shrivastava, Namrata [School of Physics, DAVV, Khandwa Road, Indore – 452001 India (India); Gupta, Ajay [Amity Centre for Spintronic Materials, Amity University, Noida 201303.India (India)

2016-05-23

The present work reports the crystallization study of amorphous FeCoB ribbons using x-ray diffraction, {sup 57}Fe Mössbauer spectroscopy in transmission mode and magneto-optical Kerr (MOKE) microscopy. Annealing at 673 K is found to result in crystallization. From the Mossbauer measurements it is observed that the Fe magnetic moments are in the plane of sample for as-cast ribbon; α-FeCo, (Fe{sub 0.5}Co{sub 0.5}){sub 2}B and Fe{sub 2}B phases are formed after crystallization. MOKE microscopy revealed that wide 180° domain walls & narrow fingerprint domains are observed before crystallization and fine domains are observed after crystallization. The results are explained in terms of the presence of internal stresses and their annealing with thermal heat treatment.

Ribbon scanning confocal for high-speed high-resolution volume imaging of brain.

Directory of Open Access Journals (Sweden)

Alan M Watson

Full Text Available Whole-brain imaging is becoming a fundamental means of experimental insight; however, achieving subcellular resolution imagery in a reasonable time window has not been possible. We describe the first application of multicolor ribbon scanning confocal methods to collect high-resolution volume images of chemically cleared brains. We demonstrate that ribbon scanning collects images over ten times faster than conventional high speed confocal systems but with equivalent spectral and spatial resolution. Further, using this technology, we reconstruct large volumes of mouse brain infected with encephalitic alphaviruses and demonstrate that regions of the brain with abundant viral replication were inaccessible to vascular perfusion. This reveals that the destruction or collapse of large regions of brain micro vasculature may contribute to the severe disease caused by Venezuelan equine encephalitis virus. Visualization of this fundamental impact of infection would not be possible without sampling at subcellular resolution within large brain volumes.

The Crystal structure of InAs nanorods grown onto Si[111] substrate

Energy Technology Data Exchange (ETDEWEB)

Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3,57072, Siegen (Germany); Breuer, Steffen; Dimakis, Manos; Geelhaar, Lutz [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2011-07-01

Nanowires are of particular interest due to the ability to synthesize heterostructures in the nanometer range. It was found that nearly any AIIIBV semiconductor material can be grown as NWs onto another AIIIBV or group IV [111] substrate independent from lattice mismatch. We presented an X-ray characterization of InAs NRs on Si [111] grown by assist free MBE method. Lattice mismatch of this materials is 11%. For study of strain realizing we concentrated our research on initial stages of growth process investigating samples set with different growth time. Using synchrotron radiation we have performed experiments in symmetrical and asymmetrical out-of plane scattering geometry and grazing-incidence diffraction. Combining the results we were able to characterize the transition between silicon silicon substrate and InAs NWs. We find in-plane lattice mismatch of -0.18% close to the interface compared to InAs bulk material. With help of micro-focus setup we are able measure structural parameters of single NWs to determine the strain accomodation as function of NW size. In particular using asymmetric wurzite-sensitive reflections under coherent beam illumination we could quantify the number of stacking faults. In the talk we present details of the analysis and first simulation results.

Exchange bias behavior in Ni{sub 50.0}Mn{sub 35.5} In{sub 14.5} ribbons annealed at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Sanchez, T. [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Sato Turtelli, R.; Groessinger, R. [Institut fur Festkoerperphysik, Technische Universitaet Wien, Wiedner Hauptstr. 8-10, 1040 Vienna (Austria); Sanchez, M.L.; Santos, J.D.; Rosa, W.O.; Prida, V.M. [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Escoda, Ll.; Sunol, J.J. [Campus de Montilivi, Universidad de Girona, edifici PII, Lluis Santalo s/n. 17003 Girona (Spain); Koledov, V. [Kotelnikov Institute of Radio Engineering and Electronics, RAS, Moscow 125009 (Russian Federation); Hernando, B., E-mail: grande@uniovi.es [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain)

2012-10-15

Heusler alloy Ni{sub 50.0}Mn{sub 35.5}In{sub 14.5} ribbons were prepared by melt-spinning technique. Several short time annealings were carried out in order to enhance the exchange bias effect in this alloy ribbon. The magnetic transition temperature increases with the annealing, compared to the as-spun sample, however no significant differences in respective Curie temperatures were observed for austenite and martensite phases in such annealed samples. Exchange bias effect is observed at low temperatures for all samples and practically vanishes at 60 K for the as-spun sample, whereas for the annealed ribbons it vanishes at 100 K.

Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by metalorganic chemical vapor deposition

International Nuclear Information System (INIS)

Shim, Byung-Young; Ko, Eun-A; Song, Jae-Chul; Kang, Dong-Hun; Kim, Dong-Wook; Lee, In-Hwan; Kannappan, Santhakumar; Lee, Cheul-Ro

2007-01-01

Single-crystal GaN nano-column arrays were grown on Au-coated silicon (111) substrate by Au-Ga alloy seeding method using metalorganic chemical vapor deposition (MOCVD). The nano-column arrays were studied as a function of growth parameters and Au thin film thickness. The diameter and length of the as-grown nano-column vary from 100 to 500 nm and 4 to 6 μm, respectively. The surface morphology and optical properties of the nano-columns were investigated using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), cathodoluminescence (CL) and photoluminescence (PL). The Au+Ga alloy droplets were found to be uniformly distributed on silicon surface. Further, SEM image reveals a vertical growth and cylindrical in shape GaN nano-column. The chemical composition of the nano-column, which composed of gallium and nitrogen ions, was estimated by EDX. CL reveals a strong band edge emission from the GaN nano-column. PL spectra show a peak at 365.7 nm with a full-width half maximum (FWHM) of 65 meV which indicates good optical quality GaN nano-column with low dislocation density. Our results suggest that single crystal GaN nano-column can be grown on Au+Ga alloy on silicon substrate with a low dislocation density for better device performances. (author)

Novel four-point-probe design and nanorobotic dual endeffector strategy for electrical characterization of as-grown SWCNT bundles

DEFF Research Database (Denmark)

Eichhorn, V; Fatikow, S; Sardan Sukas, Özlem

2010-01-01

In this paper, a novel nanorobotic strategy for non-destructive and direct electrical characterization of as-grown bundles of single-walled carbon nanotubes (SWCNTs) is presented. For this purpose, test patterns of SWCNT bundles having different diameters are grown on a silicon substrate...... by chemical vapor deposition. A new design of microstructured four-point-probes is proposed and fabricated allowing for direct contacting of vertically aligned bundles of SWCNTs. A nanorobotic setup is upgraded into a dual endeffector system to achieve good electrical contact between four...

Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

DEFF Research Database (Denmark)

Sun, Jie; Lindvall, Niclas; Cole, Matthew T.

2012-01-01

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes...

3D Anisotropy of Solar Wind Turbulence, Tubes, or Ribbons?

Science.gov (United States)

Verdini, Andrea; Grappin, Roland; Alexandrova, Olga; Lion, Sonny

2018-01-01

We study the anisotropy with respect to the local magnetic field of turbulent magnetic fluctuations at magnetofluid scales in the solar wind. Previous measurements in the fast solar wind obtained axisymmetric anisotropy, despite that the analysis method allows nonaxisymmetric structures. These results are probably contaminated by the wind expansion that introduces another symmetry axis, namely, the radial direction, as indicated by recent numerical simulations. These simulations also show that while the expansion is strong, the principal fluctuations are in the plane perpendicular to the radial direction. Using this property, we separate 11 yr of Wind spacecraft data into two subsets characterized by strong and weak expansion and determine the corresponding turbulence anisotropy. Under strong expansion, the small-scale anisotropy is consistent with the Goldreich & Sridhar critical balance. As in previous works, when the radial symmetry axis is not eliminated, the turbulent structures are field-aligned tubes. Under weak expansion, we find 3D anisotropy predicted by the Boldyrev model, that is, turbulent structures are ribbons and not tubes. However, the very basis of the Boldyrev phenomenology, namely, a cross-helicity increasing at small scales, is not observed in the solar wind: the origin of the ribbon formation is unknown.

First-order reversal curve analysis in the hysteretic behavior of boron-rich nanocomposite Nd-Fe-B ribbons

International Nuclear Information System (INIS)

Saccone, F.D.; Pampillo, L.G.; Oliva, M.I.; Bercoff, P.G.; Bertorello, H.R.; Sirkin, H.R.M.

2007-01-01

Structural and magnetic properties of melt-spun Nd 4.5 Fe 72 Co 3 Cr 2 Al 1 B 17.5 ribbons were studied by means of differential scanning calorimetry, Moessbauer effect spectroscopy, X-ray diffraction and first-order reversal curve distributions. The presence of a solid solution (Fe, Co) in ribbons annealed at 685 C for 10 min was detected from Moessbauer spectra. Correlations between the observed structural changes at higher annealing temperatures and modifications in the interaction fields of precipitated phases are discussed

Effects of Cl+ and F+ implantation of oxidation-induced stacking faults in silicon

NARCIS (Netherlands)

Xu, J.Y.; Bronsveld, P.M.; Boom, G.; Hosson, J.Th.M. De

1984-01-01

Three implantation effects were investigated in floating-zone-grown silicon: (a) the effect of Cl+ implantation resulting in the shrinkage of oxidation-induced stacking faults; (b) the effect of F+ implantation giving rise to defaulting of the 1/3 [111] Frank dislocations into 1/2[110] perfect

Directed Atom-by-Atom Assembly of Dopants in Silicon.

Science.gov (United States)

Hudak, Bethany M; Song, Jiaming; Sims, Hunter; Troparevsky, M Claudia; Humble, Travis S; Pantelides, Sokrates T; Snijders, Paul C; Lupini, Andrew R

2018-05-17

The ability to controllably position single atoms inside materials is key for the ultimate fabrication of devices with functionalities governed by atomic-scale properties. Single bismuth dopant atoms in silicon provide an ideal case study in view of proposals for single-dopant quantum bits. However, bismuth is the least soluble pnictogen in silicon, meaning that the dopant atoms tend to migrate out of position during sample growth. Here, we demonstrate epitaxial growth of thin silicon films doped with bismuth. We use atomic-resolution aberration-corrected imaging to view the as-grown dopant distribution and then to controllably position single dopants inside the film. Atomic-scale quantum-mechanical calculations corroborate the experimental findings. These results indicate that the scanning transmission electron microscope is of particular interest for assembling functional materials atom-by-atom because it offers both real-time monitoring and atom manipulation. We envision electron-beam manipulation of atoms inside materials as an achievable route to controllable assembly of structures of individual dopants.

Superhydrophobic SERS substrates based on silicon hierarchical nanostructures

Science.gov (United States)

Chen, Xuexian; Wen, Jinxiu; Zhou, Jianhua; Zheng, Zebo; An, Di; Wang, Hao; Xie, Weiguang; Zhan, Runze; Xu, Ningsheng; Chen, Jun; She, Juncong; Chen, Huanjun; Deng, Shaozhi

2018-02-01

Silicon nanostructures have been cultivated as promising surface enhanced Raman scattering (SERS) substrates in terms of their low-loss optical resonance modes, facile functionalization, and compatibility with today’s state-of-the-art CMOS techniques. However, unlike their plasmonic counterparts, the electromagnetic field enhancements induced by silicon nanostructures are relatively small, which restrict their SERS sensing limit to around 10-7 M. To tackle this problem, we propose here a strategy for improving the SERS performance of silicon nanostructures by constructing silicon hierarchical nanostructures with a superhydrophobic surface. The hierarchical nanostructures are binary structures consisted of silicon nanowires (NWs) grown on micropyramids (MPs). After being modified with perfluorooctyltriethoxysilane (PFOT), the nanostructure surface shows a stable superhydrophobicity with a high contact angle of ˜160°. The substrate can allow for concentrating diluted analyte solutions into a specific area during the evaporation of the liquid droplet, whereby the analytes are aggregated into a small volume and can be easily detected by the silicon nanostructure SERS substrate. The analyte molecules (methylene blue: MB) enriched from an aqueous solution lower than 10-8 M can be readily detected. Such a detection limit is ˜100-fold lower than the conventional SERS substrates made of silicon nanostructures. Additionally, the detection limit can be further improved by functionalizing gold nanoparticles onto silicon hierarchical nanostructures, whereby the superhydrophobic characteristics and plasmonic field enhancements can be combined synergistically to give a detection limit down to ˜10-11 M. A gold nanoparticle-functionalized superhydrophobic substrate was employed to detect the spiked melamine in liquid milk. The results showed that the detection limit can be as low as 10-5 M, highlighting the potential of the proposed superhydrophobic SERS substrate in

Numerical Study of the influence of a ribbon geometry of experiment on measuring particle angular distributions

International Nuclear Information System (INIS)

Artemov, A.S.

1996-01-01

The values and nature of systematic errors in small-angle particle scattering experiments using ribbon-like beams are investigated by numerical simulation. As shown, the extent of the influence of a ribbon geometry of experiment on the result of measurement is significantly dependent on the shape of the measured angular distribution in an elementary act of interaction. The algorithm of experimental material treatment, obtained in measuring the widths at half maximum of the angular differential cross sections of secondary particles, is presented using an example of specific distributions and certain experimental setup. (author). 12 refs., 7 figs

Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

International Nuclear Information System (INIS)

Díaz-Becerril, T.; Herrera, V.; Morales, C.; García-Salgado, G.; Rosendo, E.; Coyopol, A.; Galeazzi, R.; Romano, R.; Nieto-Caballero, F.G.; Sarmiento, J.

2017-01-01

Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta 2 O 5 and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta 2 O 5- SiO 2 -Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si + and Ta + states respectively. Ta 2 O 5 and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta 2 O 5 /Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.

Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

Science.gov (United States)

1983-01-01

Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

The mechanics of Ribbons and Möbius bands

CERN Document Server

Fried, Eliot

2016-01-01

Recent developments in biology and nanotechnology have stimulated a rapidly growing interest in the mechanics of thin, flexible ribbons and Mobius bands. This edited volume contains English translations of four seminal papers on this topic, all originally written in German; of these, Michael A. Sadowsky published the first in 1929, followed by two others in 1930, and Walter Wunderlich published the last in 1962. The volume also contains invited, peer-reviewed, original research articles on related topics. Previously published in the Journal of Elasticity, Volume 119, Issue 1-2, 2015.

Magnetoband structures of AB-stacked zigzag nanographite ribbons

Energy Technology Data Exchange (ETDEWEB)

Chang, C.P.; Chiu, C.W.; Shyu, F.L.; Chen, R.B.; Lin, M.F

2002-12-30

Magnetoband structures of AB-stacked zigzag nanographite ribbons are studied by the tight-binding model. The magnetic field changes band width, energy space, and energy dispersions (the produce of Landau subbands and Landau levels). It causes many zero energy points. Such points and corresponding localized states are studied in detail. There are certain important differences between localized states and edge states. Oscillation period of Landau subbands are determined by these points. The interribbon interactions also affect magnetoband structures, such as energy dispersions, band width, oscillation period of Landau subbands, and flux dependence of Hofstadter butterflies.

Band structure properties of (BGa)P semiconductors for lattice matched integration on (001) silicon

Energy Technology Data Exchange (ETDEWEB)

Hossain, Nadir; Sweeney, Stephen [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Hosea, Jeff [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, UK and Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Liebich, Sven; Zimprich, Martin; Volz, Kerstin; Stolz, Wolfgang [Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg (Germany); Kunert, Bernerdette [NAsP III/V GmbH, Am Knechtacker 19, 35041 Marburg (Germany)

2013-12-04

We report the band structure properties of (BGa)P layers grown on silicon substrate using metal-organic vapour-phase epitaxy. Using surface photo-voltage spectroscopy we find that both the direct and indirect band gaps of (BGa)P alloys (strained and unstrained) decrease with Boron content. Our experimental results suggest that the band gap of (BGa)P layers up to 6% Boron is large and suitable to be used as cladding and contact layers in GaP-based quantum well heterostructures on silicon substrates.

Strained silicon/silicon germanium heterojunction n-channel metal oxide semiconductor field effect transistors

International Nuclear Information System (INIS)

Olsen, Sarah H.

2002-01-01

Investigations into the performance of strained silicon/silicon-germanium (Si/SiGe) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) have been carried out. Theoretical predictions suggest that use of a strained Si/SiGe material system with advanced material properties compared with conventional silicon allows enhanced MOSFET device performance. This study has therefore investigated the practical feasibility of obtaining superior electrical performance using a Si/SiGe material system. The MOSFET devices consisted of a strained Si surface channel and were fabricated on relaxed SiGe material using a reduced thermal budget process in order to preserve the strain. Two batches of strained Si/SiGe devices fabricated on material grown by differing methods have been analysed and both showed good transistor action. A correlation of electrical and physical device data established that the electrical device behaviour was closely related to the SiGe material quality, which differed depending on growth technique. The cross-wafer variation in the electrical performance of the strained Si/SiGe devices was found to be a function of material quality, thus the viability of Si/SiGe MOSFET technology for commercial applications has been addressed. Of particular importance was the finding that large-scale 'cross-hatching' roughness associated with relaxed SiGe alloys led to degradation in the small-scale roughness at the gate oxide interface, which affects electrical device performance. The fabrication of strained Si MOSFET devices on high quality SiGe material thus enabled significant performance gains to be realised compared with conventional Si control devices. In contrast, the performance of devices fabricated on material with severe cross-hatching roughness was found to be diminished by the nanoscale oxide interface roughness. The effect of device processing on SiGe material with differing as-grown roughness has been carried out and compared with the reactions

Corrosion-resistant amorphous alloy ribbons for electromagnetic filtration of iron rusts from water

International Nuclear Information System (INIS)

Kawashima, Asahi; Asami, Katsuhiko; Sato, Takeaki; Hashimoto, Koji

1985-01-01

An attempt was made to use corrosion-resistant amorphous Fe-9Cr-13P-7C alloy ribbons as an electromagnetic filter material for trapping various iron rusts suspended in water at 40 0 C. The ferrimagnetic Fe 3 O 4 rust was trapped with the 100 % efficiency and paramagnetic rusts such as α-Fe 2 O 3 , α-FeOOH and amorphous ferric oxyhydroxide were trapped with certain efficiencies at the magnetic field strength of 0.5-10 kOe. The regeneration of the filter by back-washing was easy. The trapping capacity of electromagnetic filter was proportional to the edge length of the filter material where the high magnetic field strength existed. Therefore, melt-spun thin and narrow amorphous alloy ribbons having the high corrosion resistance have the potential utility as electromagnetic filter material. (author)

The influence of API concentration on the roller compaction process: modeling and prediction of the post compacted ribbon, granule and tablet properties using multivariate data analysis.

Science.gov (United States)

Boersen, Nathan; Carvajal, M Teresa; Morris, Kenneth R; Peck, Garnet E; Pinal, Rodolfo

2015-01-01

While previous research has demonstrated roller compaction operating parameters strongly influence the properties of the final product, a greater emphasis might be placed on the raw material attributes of the formulation. There were two main objectives to this study. First, to assess the effects of different process variables on the properties of the obtained ribbons and downstream granules produced from the rolled compacted ribbons. Second, was to establish if models obtained with formulations of one active pharmaceutical ingredient (API) could predict the properties of similar formulations in terms of the excipients used, but with a different API. Tolmetin and acetaminophen, chosen for their different compaction properties, were roller compacted on Fitzpatrick roller compactor using the same formulation. Models created using tolmetin and tested using acetaminophen. The physical properties of the blends, ribbon, granule and tablet were characterized. Multivariate analysis using partial least squares was used to analyze all data. Multivariate models showed that the operating parameters and raw material attributes were essential in the prediction of ribbon porosity and post-milled particle size. The post compacted ribbon and granule attributes also significantly contributed to the prediction of the tablet tensile strength. Models derived using tolmetin could reasonably predict the ribbon porosity of a second API. After further processing, the post-milled ribbon and granules properties, rather than the physical attributes of the formulation were needed to predict downstream tablet properties. An understanding of the percolation threshold of the formulation significantly improved the predictive ability of the models.

Transparent SiON/Ag/SiON multilayer passivation grown on a flexible polyethersulfone substrate using a continuous roll-to-roll sputtering system

Science.gov (United States)

2012-01-01

We have investigated the characteristics of a silicon oxynitride/silver/silicon oxynitride [SiON/Ag/SiON] multilayer passivation grown using a specially designed roll-to-roll [R2R] sputtering system on a flexible polyethersulfone substrate. Optical, structural, and surface properties of the R2R grown SiON/Ag/SiON multilayer were investigated as a function of the SiON thickness at a constant Ag thickness of 12 nm. The flexible SiON/Ag/SiON multilayer has a high optical transmittance of 87.7% at optimized conditions due to the antireflection and surface plasmon effects in the oxide-metal-oxide structure. The water vapor transmission rate of the SiON/Ag/SiON multilayer is 0.031 g/m2 day at an optimized SiON thickness of 110 nm. This indicates that R2R grown SiON/Ag/SiON is a promising thin-film passivation for flexible organic light-emitting diodes and flexible organic photovoltaics due to its simple and low-temperature process. PMID:22221400

Characterization of electrical and optical properties of silicon based materials

Energy Technology Data Exchange (ETDEWEB)

Jia, Guobin

2009-12-04

In this work, the electrical and luminescence properties of a series of silicon based materials used for photovoltaics, microelectronics and nanoelectronics have been investigated by means of electron beam induced current (EBIC), cathodoluminescence (CL), photoluminescence (PL) and electroluminescence (EL) methods. Photovoltaic materials produced by block casting have been investigated by EBIC on wafers sliced from different parts of the ingot. Various solar cell processings have been compared in parallel wafers by means of EBIC collection efficiency measurements and contrast-temperature C(T) behaviors of the extended defects, i. e. dislocations and grain boundaries (GBs). It was found that the solar cell processing with phosphorus diffusion gettering (PDG) followed with a SiN firing greatly reduces the recombination activity of extended defects at room temperature, and improves the bulk property simultaneously. A remaining activity of the dislocations indicates the limitation of the PDG at extended defects. Abnormal behavior of the dislocation activity after certain solar cell processes was also observed in the region with high dislocation density, the dislocations are activated after certain solar cell processings. In order to evaluate the properties of a thin polycrystalline silicon layer prepared by Al-induced layer exchange (Alile) technique, epitaxially layer grown on silicon substrate with different orientations was used as a model system to investigate the impact by the process temperature and the substrates. EBIC energy dependent collection efficiency measurements reveal an improvement of the epilayer quality with increasing substrate temperature during the growth from 450 C to 650 C, and a decrease of epilayer quality at 700 C. PL measurements on the epitaxially grown Si layer on silicon substrates revealed no characteristic dislocation-related luminescence (DRL) lines at room temperature and 77 K, while in the samples prepared by Alile process, intense

Novel hydrated graphene ribbon unexpectedly promotes aged seed germination and root differentiation

Science.gov (United States)

Hu, Xiangang; Zhou, Qixing

2014-01-01

It is well known that graphene (G) induces nanotoxicity towards living organisms. Here, a novel and biocompatible hydrated graphene ribbon (HGR) unexpectedly promoted aged (two years) seed germination. HGR formed at the normal temperature and pressure (120 days hydration), presented 17.1% oxygen, 0.9% nitrogen groups, disorder-layer structure, with 0.38 nm thickness ribbon morphology. Interestingly, there were bulges around the edges of HGR. Compared to G and graphene oxide (GO), HGR increased seed germination by 15% root differentiation between 52 and 59% and enhanced resistance to oxidative stress. The metabonomics analysis discovered that HGR upregulated carbohydrate, amino acid, and fatty acids metabolism that determined secondary metabolism, nitrogen sequestration, cell membrane integrity, permeability, and oxidation resistance. Hexadecanoic acid as a biomarker promoted root differentiation and increased the germination rate. Our discovery is a novel HGR that promotes aged seed germination, illustrates metabolic specificity among graphene-based materials, and inspires innovative concepts in the regulation of seed development.

First-order reversal curve analysis in the hysteretic behavior of boron-rich nanocomposite Nd-Fe-B ribbons

Energy Technology Data Exchange (ETDEWEB)

Saccone, F.D. [Laboratorio de Solidos Amorfos, Departamento de Fisica, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina) and CONICET (Argentina)]. E-mail: fsaccon@fi.uba.ar; Pampillo, L.G. [Laboratorio de Solidos Amorfos, Departamento de Fisica, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Oliva, M.I. [Facultad de Matematica, Astronomia y Fisica, Universidad Nacional de Cordoba (Argentina); CONICET (Argentina); Bercoff, P.G. [Facultad de Matematica, Astronomia y Fisica, Universidad Nacional de Cordoba (Argentina); CONICET (Argentina); Bertorello, H.R. [Facultad de Matematica, Astronomia y Fisica, Universidad Nacional de Cordoba (Argentina); CONICET (Argentina); Sirkin, H.R.M. [Laboratorio de Solidos Amorfos, Departamento de Fisica, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); CONICET (Argentina)

2007-09-01

Structural and magnetic properties of melt-spun Nd{sub 4.5}Fe{sub 72}Co{sub 3}Cr{sub 2}Al{sub 1}B{sub 17.5} ribbons were studied by means of differential scanning calorimetry, Moessbauer effect spectroscopy, X-ray diffraction and first-order reversal curve distributions. The presence of a solid solution (Fe, Co) in ribbons annealed at 685 C for 10 min was detected from Moessbauer spectra. Correlations between the observed structural changes at higher annealing temperatures and modifications in the interaction fields of precipitated phases are discussed.

Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

OpenAIRE

Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

2011-01-01

The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucle...

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

Science.gov (United States)

Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

2017-12-13

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

TEM investigation of aluminium containing precipitates in high aluminium doped silicon carbide

International Nuclear Information System (INIS)

Wong-Leung, J.; FitzGerald, J.D.

2002-01-01

Full text: Silicon carbide is a promising semiconductor material for applications in high temperature and high power devices. The successful growth of good quality epilayers in this material has enhanced its potential for device applications. As a novel semiconductor material, there is a need for studying its basic physical properties and the role of dopants in this material. In this study, silicon carbide epilayers were grown on 4H-SiC wafers of (0001) orientation with a miscut angle of 8 deg at a temperature of 1550 deg C. The epilayers contained regions of high aluminium doping well above the solubility of aluminium in silicon carbide. High temperature annealing of this material resulted in the precipitation of aluminium in the wafers. The samples were analysed by secondary ion mass spectrometry and transmission electron microscopy. Selected area diffraction studies show the presence of aluminium carbide and aluminium silicon carbide phases. Copyright (2002) Australian Society for Electron Microscopy Inc

Strong quantum-confined stark effect in germanium quantum-well structures on silicon

International Nuclear Information System (INIS)

Kuo, Y.; Lee, Y. K.; Gei, Y.; Ren, S; Roth, J. E.; Miller, D. A.; Harris, J. S.

2006-01-01

Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such component with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimeters) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger Quantum-Confined Stark Effect (QCSE) mechanism, which allows modulator structures with only micrometers of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor, such semiconductors often display much weak optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture. (author)

Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon.

Science.gov (United States)

Bandarenka, Hanna V; Girel, Kseniya V; Zavatski, Sergey A; Panarin, Andrei; Terekhov, Sergei N

2018-05-21

The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS) with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs), and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon

Directory of Open Access Journals (Sweden)

Hanna V. Bandarenka

2018-05-01

Full Text Available The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs, and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Armstrong, A.; Poblenz, C.; Green, D.S.; Mishra, U.K.; Speck, J.S.; Ringel, S.A.

2006-01-01

The electrical conductivity and deep level spectrum of GaN grown by molecular beam epitaxy and codoped with carbon and silicon were investigated for substrate temperatures T s of 650 and 720 deg. C as a function relative carbon and silicon doping levels. With sufficiently high carbon doping, semi-insulating behavior was observed for films grown at both temperatures, and growth at T s =720 deg. C enhanced the carbon compensation ratio. Similar carbon-related band gap states were observed via deep level optical spectroscopy for films grown at both substrate temperatures. Due to the semi-insulating nature of the films, a lighted capacitance-voltage technique was required to determine individual deep level concentrations. Carbon-related band gap states underwent substantial redistribution between deep level and shallow acceptor configurations with change in T s . In light of a T s dependence for the preferential site of carbon incorporation, a model of semi-insulating behavior in terms of carbon impurity state incorporation mediated by substrate temperature is proposed

Synthetic osteogenic extracellular matrix formed by coated silicon dioxide nanosprings

Directory of Open Access Journals (Sweden)

Hass Jamie L

2012-01-01

Full Text Available Abstract Background The design of biomimetic materials that parallel the morphology and biology of extracellular matrixes is key to the ability to grow functional tissues in vitro and to enhance the integration of biomaterial implants into existing tissues in vivo. Special attention has been put into mimicking the nanostructures of the extracellular matrix of bone, as there is a need to find biomaterials that can enhance the bonding between orthopedic devices and this tissue. Methods We have tested the ability of normal human osteoblasts to propagate and differentiate on silicon dioxide nanosprings, which can be easily grown on practically any surface. In addition, we tested different metals and metal alloys as coats for the nanosprings in tissue culture experiments with bone cells. Results Normal human osteoblasts grown on coated nanosprings exhibited an enhanced rate of propagation, differentiation into bone forming cells and mineralization. While osteoblasts did not attach effectively to bare nanowires grown on glass, these cells propagated successfully on nanosprings coated with titanium oxide and gold. We observed a 270 fold increase in the division rate of osteoblasts when grow on titanium/gold coated nanosprings. This effect was shown to be dependent on the nanosprings, as the coating by themselves did not alter the growth rate of osteoblast. We also observed that titanium/zinc/gold coated nanosprings increased the levels of osteoblast production of alkaline phosphatase seven folds. This result indicates that osteoblasts grown on this metal alloy coated nanosprings are differentiating to mature bone making cells. Consistent with this hypothesis, we showed that osteoblasts grown on the same metal alloy coated nanosprings have an enhanced ability to deposit calcium salt. Conclusion We have established that metal/metal alloy coated silicon dioxide nanosprings can be used as a biomimetic material paralleling the morphology and biology of

Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrate

International Nuclear Information System (INIS)

Rodriguez, J. B.; Cerutti, L.; Grech, P.; Tournie, E.

2009-01-01

We report on a GaSb-based type-I laser structure grown by molecular beam epitaxy on a (001) silicon substrate. A thin AlSb nucleation layer followed by a 1 μm thick GaSb buffer layer was used to accommodate the very large lattice mismatch existing with the silicon substrate. Processed devices with mesa geometry exhibited laser operation in pulsed mode with a duty cycle up to 10% at room temperature

Future application of Czochralski crystal pulling for silicon

Science.gov (United States)

Matlcok, J. H.

1985-08-01

Czochralski (Cz) crystal pulling has been the predominant method used for preparing silicon single crystal for the past twenty years. The fundamental technology used has changed little. However, great strides have been made in learning how to make the crystals bigger and of better quality at ever increasing productivity rates. Currently charge sizes of 50 kg of polycrystal silicon are being used for production and crystals up to ten inches in diameter have been grown without major difficulty. The largest material actually being processed in silicon wafer form is 150 mm (6 inches) in diameter. Growing of crystals in a magnetic field has proved to be particularly useful for microscopic impurity control. Major developments in past years on equipment for Cz crystal pulling have included the automatic growth control of the diameter as well as the starting core of the crystal, the use of magnetic fields and around the crystal puller to supress convection, various recharging schemes for dopant control and the use of continuous liquid feed in the crystal puller. The latter, while far from being a reliable production process, is ideal in concept for major improvement in Cz crystal pulling. The Czochralski process will maintain its dominance of silicon crystal production for many years.

Characterization of Urea Versus hmta in the Preparation of Zinc Oxide NANOSTRUCTURES by Catalytic Immersion Method Grown on Gold-seeded Silicon Substrate

International Nuclear Information System (INIS)

Azlinda Abdul Aziz; Khusaimi, Z.; Rusop, M.

2011-01-01

Zinc oxide (ZnO) nano structured prepared by immersed method were successfully grown on gold-seeded silicon substrate using Zinc nitrate hexahydrate (Zn(NO 3 ) 2 .6H 2 O) as a precursor was stabilized by a non-toxic urea (CH 4 N 2 O) in a ratio of 1:2 and 1:1 ratio of hexamethylene tetraamine (HMTA). The effect of changing the stabilizer of ZnO solution on the crystal structure, morphology and photoluminescence properties of the resultant ZnO is investigated. X-ray diffraction of the synthesized ZnO shows hexagonal zincite structure. The morphology of the ZnO was characterizing using Field Emission Scanning Electron Microscope (FESEM). The growth of ZnO using urea as stabilizer shows the clusters of ZnO nano flower with serrated broad petals and sharp tips of approximately 25 nm were interestingly formed. ZnO in HMTA showed growth of nano rods. The structures has high surface area, is a potential metal oxide nano structures to be develop for optoelectronic devices and chemical sensors. The formation of ZnO nano structures is found to be significantly affected by the stabilizer. (author)

Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties

Energy Technology Data Exchange (ETDEWEB)

Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Casas Espinola, J.L. [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Vergara Hernandez, E. [UPIITA—Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Khomenkova, L., E-mail: khomen@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, 03028 Kyiv (Ukraine); Delachat, F.; Slaoui, A. [ICube, 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2 (France)

2015-04-30

Si-rich Silicon nitride films were grown on silicon substrates by plasma enhanced chemical vapor deposition. The film stoichiometry was controlled via the variation of NH{sub 3}/SiH{sub 4} ratio from 0.45 up to 1.0. Thermal annealing at 1100 °C for 30 min in the nitrogen flow was applied to form the Si nanocrystals in the films that have been investigated by means of photoluminescence and Raman scattering methods, as well as transmission electron microscopy. Several emission bands have been detected with the peak positions at: 2.8–3.0 eV, 2.5–2.7 eV, 2.10–2.25 eV, and 1.75–1.98 eV. The temperature dependences of photoluminescence spectra were studied with the aim to confirm the types of optical transitions and the nature of light emitting defects in silicon nitride. The former three bands were assigned to the defects in silicon nitride, whereas the last one (1.75–1.98 eV) was attributed to the exciton recombination inside of Si nanocrystals. The photoluminescence mechanism is discussed. - Highlights: • Substoichiometric silicon nitride films were grown by PECVD technique. • The variation of the NH{sub 3}/SiH{sub 4} ratio controls excess Si content in the films. • Both Si nanocrystals and amorphous Si phase were observed in annealed films. • Temperature evolution of carrier recombination via Si nanocrystals and host defects.

Transient Photoinduced Absorption in Ultrathin As-grown Nanocrystalline Silicon Films

Directory of Open Access Journals (Sweden)

Lioutas Ch

2007-01-01

Full Text Available AbstractWe have studied ultrafast carrier dynamics in nanocrystalline silicon films with thickness of a few nanometers where boundary-related states and quantum confinement play an important role. Transient non-degenerated photoinduced absorption measurements have been employed to investigate the effects of grain boundaries and quantum confinement on the relaxation dynamics of photogenerated carriers. An observed long initial rise of the photoinduced absorption for the thicker films agrees well with the existence of boundary-related states acting as fast traps. With decreasing the thickness of material, the relaxation dynamics become faster since the density of boundary-related states increases. Furthermore, probing with longer wavelengths we are able to time-resolve optical paths with faster relaxations. This fact is strongly correlated with probing in different points of the first Brillouin zone of the band structure of these materials.

HRTEM and neutron diffraction study of LixMo5O17: From the ribbon (x=5) structure to the rock salt (x=12) structure

International Nuclear Information System (INIS)

Lebedev, O.I.; Caignaert, V.; Raveau, B.; Pop, N.; Gozzo, F.; Van Tendeloo, G.; Pralong, V.

2011-01-01

Structure determination of the fully intercalated phase Li 12 Mo 5 O 17 and of the deintercalated oxide Li 5 Mo 5 O 17 has been carried out by electron microscopy and neutron powder diffraction. The reversible topotactic transformation between the ordered rock salt structure of the former and the ribbon structure of the latter (closely related to that of Li 4 Mo 5 O 17 ) is explained on the following basis: both structures can be described as strips built up as an assembly of infinite ribbons of MoO 6 octahedra that are five octahedra thick, and that differ by slight displacements of the octahedral ribbons. We show that the electrochemical behavior of the Li x Mo 5 O 17 system is based on two sorts of Li + sites; those that are located within the strips between the ribbons, and those that are located at the border of the strips. The high rate of Li intercalation in this oxide and its reversibility are discussed in terms of its peculiar structure. -- Graphical abstract: Structure determination of the fully intercalated phase Li 12 Mo 5 O 17 and of the deintercalated oxide Li 5 Mo 5 O 17 has been carried out by electron microscopy and neutron powder diffraction. The reversible topotactic transformation between the ordered rock salt structure of the former and the ribbon structure of the latter is explained on the following basis: both structures can be described as strips built up as an assembly of infinite ribbons of MoO 6 octahedra that are five octahedra thick, and that differ by slight displacements of the octahedral ribbons. We show that the electrochemical behavior of the Li x Mo 5 O 17 system is based on two sorts of Li + sites; those that are located within the strips between the ribbons, and those that are located at the border of the strips. The high rate of Li intercalation in this oxide and its reversibility are discussed in terms of its peculiar structure. Research highlights: → Electron microscopy and neutron powder diffraction structure determination

{gamma}-Fe phase plasma-induced on the surface of thin S3A alloy ribbons

Energy Technology Data Exchange (ETDEWEB)

Cabral-Prieto, A., E-mail: agustin.cabral@inin.gob.mx; Garcia-Sosa, I., E-mail: irma.garcia@inin.gob.mx [Instituto Nacional de Investigaciones Nucleares, Departamento de Quimica (Mexico); Nava, N., E-mail: tnava@imp.mx [Instituto Mexicano del Petroleo, Eje Central Lazaro Cardenas (Mexico); Camps, E., E-mail: enrique.camps@inin.gob.mx; Escobar, Luis, E-mail: luis.escobar@inin.gov.mx [Instituto Nacional de Investigaciones Nucleares, Departamento de Quimica (Mexico); Lopez-Castanarez, R., E-mail: rlc@anuies.mx; Olea-Cardoso, O., E-mail: olc@anuies.mx [Universidad Autonoma del Edo. de Mexico, Facultad de Quimica (Mexico)

2011-11-15

Amorphous alloy ribbons of Fe{sub 77}Cr{sub 2}B{sub 16}Si{sub 5} were exposed to cold plasmas of N{sub 2} and Ar-N{sub 2} at temperatures lower than T{sub x} = 808 K. The conversion X-ray Moessbauer spectra of the plasma-exposed ribbons consist of a singlet and a broadened magnetic sextet. The singlet with isomer shift {delta} = -0.11 mm/s can be assigned to {gamma}-Fe austenite phase. Minor bulk magnetic changes in the alloy were measured as a consequence of these treatments; e.g. the relative intensities A23 of the transmission Moessbauer spectra of the untreated and treated samples, were 3.22 and 3.56, respectively, the B{sub hf} values changed from 22.9 T (untreated sample) to 22.4 T (plasma treated samples). Unexpectedly, the {gamma}-Fe phase can also be produced by simply heating the alloy ribbons under N{sub 2} flux at temperatures as low as 423 K. Moessbauer data of the crystallized samples are also reported, and a qualitative assessment on the mechanical properties of the Fe{sub 77}Cr{sub 2}B{sub 16}Si{sub 5} alloy associated with the plasma and/or temperature surface induced {gamma}-Fe phase is given.

Growth on elastic silicone substrate elicits a partial myogenic response in periodontal ligament derived stem cells

Directory of Open Access Journals (Sweden)

Daniel Pelaez

2016-12-01

Full Text Available The processes of cellular differentiation and phenotypic maintenance can be influenced by stimuli from a variety of different factors. One commonly overlooked factor is the mechanical properties of the growth substrate in which stem cells are maintained or differentiated down various lineages. Here we explored the effect that growth on an elastic silicone substrate had on the myogenic expression and cytoskeletal morphology of periodontal ligament derived stem cells. Cells were grown on either collagen I coated tissue culture polystyrene plates or collagen I coated elastic silicone membranes for a period of 4 days without further induction from soluble factors in the culture media. Following the 4-day growth, gene expression and immunohistochemical analysis for key cardiomyogenic markers was performed along with a morphological assessment of cytoskeletal organization. Results show that cells grown on the elastic substrate significantly upregulate key markers associated with contractile activity in muscle tissues. Namely, the myosin light chain polypeptides 2 and 7, as well as the myosin heavy chain polypeptide 7 genes underwent a statistically significant upregulation in the cells grown on elastic silicone membranes. Similarly, the cells on the softer elastic substrate stained positive for both sarcomeric actin and cardiac troponin t proteins following just 4 days of growth on the softer material. Cytoskeletal analysis showed that substrate stiffness had a marked effect on the organization and distribution of filamentous actin fibers within the cell body. Growth on silicone membranes produced flatter and shorter cellular morphologies with filamentous actin fibers projecting anisotropically throughout the cell body. These results demonstrate how crucial the mechanical properties of the growth substrate of cells can be on the ultimate cellular phenotype. These observations highlight the need to further optimize differentiation protocols to enhance

A photoemission study of the effectiveness of nickel, manganese, and cobalt based corrosion barriers for silicon photo-anodes during water oxidation

Energy Technology Data Exchange (ETDEWEB)

O' Connor, Robert; Bogan, Justin; McCoy, Anthony; Byrne, Conor; Hughes, Greg [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland)

2016-05-21

Silicon is an attractive material for solar water splitting applications due to its abundance and its capacity to absorb a large fraction of incident solar radiation. However, it has not received as much attention as other materials due to its tendency to oxidize very quickly in aqueous environments, particularly when it is employed as the anode where it drives the oxygen evolution reaction. In recent years, several works have appeared in the literature examining the suitability of thin transition metal oxide films grown on top of the silicon to act as a corrosion barrier. The film should be transparent to solar radiation, allow hole transport from the silicon surface to the electrolyte, and stop the diffusion of oxygen from the electrolyte back to the silicon. In this work, we compare Mn-oxide, Co-oxide, and Ni-oxide thin films grown using physical vapor deposition in order to evaluate which material offers the best combination of photocurrent and corrosion protection. In addition to the electrochemical data, we also present a detailed before-and-after study of the surface chemistry of the films using x-ray photoelectron spectroscopy. This approach allows for a comprehensive analysis of the mechanisms by which the corrosion barriers protect the underlying silicon, and how they degrade during the water oxidation reaction.

Silicon doped InP as an alternative plasmonic material for mid-infrared

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn

2016-01-01

Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...

Vickers Microhardness and Hyperfine Magnetic Field Variations of Heat Treated Amorphous Fe{sub 78}Si{sub 9}B{sub 13} Alloy Ribbons

Energy Technology Data Exchange (ETDEWEB)

Cabral-Prieto, A., E-mail: acpr@nuclear.inin.mx [Instituto Nacional de Investigaciones Nucleares, Department of Chemistry (Mexico); Garcia-Santibanez, F.; Lopez, A.; Lopez-Castanares, R.; Olea Cardoso, O. [Universidad Autonoma del Estado de Mexico, El Cerrillo Piedras Blancas, Facultad de Ciencias (Mexico)

2005-02-15

Amorphous Fe{sub 78}Si{sub 9}B{sub 13} alloy ribbons were heat treated between 296 and 763 K, using heating rates between 1 and 4.5 K/min. Whereas one ribbon partially crystallized at T{sub x} = 722 K, the other one partially crystallized at T{sub x} = 763 K. The partially crystallized ribbon at 722 K, heat treated using a triangular form for the heating and cooling rates, was substantially less fragile than the partially crystallized at 763 K where a tooth saw form for the heating and cooling rates was used. Vickers microhardness and hyperfine magnetic field values behaved almost concomitantly between 296 and 673 K. The Moessbauer spectral line widths of the heat-treated ribbons decreased continuously from 296 to 500 K, suggesting stress relief in this temperature range where the Vickers microhardness did not increase. At 523 K the line width decreased further but the microhardness increased substantially. After 523 K the line width behave in an oscillating form as well as the microhardness, indicating other structural changes in addition to the stress relief. Finally, positron lifetime data showed that both inner part and surface of Fe{sub 78}Si{sub 9}B{sub 13} alloy ribbons were affected distinctly. Variations on the surface may be the cause of some of the high Vickers microhardness values measured in the amorphous state.

High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

Science.gov (United States)

Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

2018-02-01

In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

Science.gov (United States)

Chowdhury, A.; Schneider, J.; Dore, J.; Mermet, F.; Slaoui, A.

2012-06-01

Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns- V oc analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V oc of about 100 mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V oc. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V oc reached is 485 mV after laser treatment and plasma hydrogenation, thanks to defects passivation.

Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surface

International Nuclear Information System (INIS)

Park, Young-Bae; Rhee, Shi-Woo

2001-01-01

Microstructure and initial growth characteristics of the hydrogenated microcrystalline Si (μc-Si:H) films grown on hydrogenated amorphous silicon nitride (a-SiN x :H) surface at low temperature were investigated using high resolution transmission electron microscope and micro-Raman spectroscopy. With increasing the Si and Si - H contents in the SiN x :H surfaces, μc-Si crystallites, a few nanometers in size, were directly grown on amorphous nitride surfaces. It is believed that the crystallites were grown through the nucleation and phase transition from amorphous to crystal in a hydrogen-rich ambient of gas phase and growing surface. The crystallite growth characteristics on the dielectric surface were dependent on the stoichiometric (x=N/Si) ratio corresponding hydrogen bond configuration of the SiN x :H surface. Surface facetting and anisotropic growth of the Si crystallites resulted from the different growth rate on the different lattice planes of Si. No twins and stacking faults were observed in the (111) lattice planes of the Si crystallites surrounding the a-Si matrix. This atomic-scale structure was considered to be the characteristic of the low temperature crystallization of the μc-Si:H by the strain relaxation of crystallites in the a-Si:H matrix. [copyright] 2001 American Institute of Physics

Surface segregation as a means of gettering Cu in liquid-phase-epitaxy silicon thin layers grown from Al-Cu-Si solutions

Energy Technology Data Exchange (ETDEWEB)

Wang, T.H.; Ciszek, T.F.; Reedy, R.; Asher, S.; King, D. [National Renewable Energy Lab., Golden, CO (United States)

1996-05-01

The authors demonstrate that, by using the natural surface segregation phenomenon, Cu can be gettered to the surface from the bulk of silicon layers so that its concentrations in the liquid-phase-epitaxy (LPE) layers are much lower than its solubility at the layer growth temperature and the reported 10{sup 17} cm{sup {minus}3} degradation threshold for solar-cell performance. Secondary-ion mass spectroscopy (SIMS) analysis indicates that, within a micron-deep sub-surface region, Cu accumulates even in as-grown LPE samples. Slower cooling after growth to room temperature enhances this Cu enrichment. X-ray photoelectron spectroscopy (XPS) measurement shows as much as 3.2% Cu in a surface region of about 50 {Angstrom}. More surface-sensitive, ion-scattering spectroscopy (ISS) analysis further reveals about 7% of Cu at the top surface. These results translate to an areal gettering capacity of about 1.0 x 10{sup 16} cm{sup {minus}2}, which is higher than the available total-area density of Cu in the layer and substrate (3.6 x 10{sup 15} cm{sup {minus}2} for a uniform 1.2 x 10{sup 17}cm{sup {minus}3} Cu throughout the layer and substrate with a total thickness of 300 {mu}m).

Ultrahigh capacitance density for multiple ALD-grown MIM capacitor stacks in 3-D silicon

NARCIS (Netherlands)

Klootwijk, J.H.; Jinesh, K.B.; Dekkers, W.; Verhoeven, J.F.C.; Heuvel, van den F.C.; Kim, H.-D.; Blin, D.; Verheijen, M.A.; Weemaes, R.G.R.; Kaiser, M.; Ruigrok, J.J.M.; Roozeboom, F.

2008-01-01

"Trench" capacitors containing multiple metal-insulator-metal (MIM) layer stacks are realized by atomic-layer deposition (ALD), yielding an ultrahigh capacitance density of 440 nF/mm2 at a breakdown voltage VBD > 6 V. This capacitance density on silicon is at least 10 times higher than the values

LSSA large area silicon sheet task continuous Czochralski process development

Science.gov (United States)

Rea, S. N.

1978-01-01

A Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a premelter to provide molten silicon flow into the primary crucible. The basic furnace is operational and several trial crystals were grown in the batch mode. Numerous premelter configurations were tested both in laboratory-scale equipment as well as in the actual furnace. The best arrangement tested to date is a vertical, cylindrical graphite heater containing small fused silicon test tube liner in which the incoming silicon is melted and flows into the primary crucible. Economic modeling of the continuous Czochralski process indicates that for 10 cm diameter crystal, 100 kg furnace runs of four or five crystals each are near-optimal. Costs tend to asymptote at the 100 kg level so little additional cost improvement occurs at larger runs. For these conditions, crystal cost in equivalent wafer area of around $20/sq m exclusive of polysilicon and slicing was obtained.

High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

Science.gov (United States)

Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

2016-11-02

Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

A Test of the Interstellar Boundary EXplorer Ribbon Formation in the Outer Heliosheath

Energy Technology Data Exchange (ETDEWEB)

Gamayunov, Konstantin V.; Rassoul, Hamid [Department of Physics and Space Sciences, Florida Institute of Technology, Melbourne, FL 32901 (United States); Heerikhuisen, Jacob, E-mail: kgamayunov@fit.edu [Department of Space Science, University of Alabama in Huntsville, Huntsville, AL 35899 (United States)

2017-08-10

NASA’s Interstellar Boundary EXplorer ( IBEX ) mission is imaging energetic neutral atoms (ENAs) propagating to Earth from the outer heliosphere and local interstellar medium (LISM). A dominant feature in all ENA maps is a ribbon of enhanced fluxes that was not predicted before IBEX . While more than a dozen models of the ribbon formation have been proposed, consensus has gathered around the so-called secondary ENA model. Two classes of secondary ENA models have been proposed; the first class assumes weak scattering of the energetic pickup protons in the LISM, and the second class assumes strong but spatially localized scattering. Here we present a numerical test of the “weak scattering” version of the secondary ENA model using our gyro-averaged kinetic model for the evolution of the phase-space distribution of protons in the outer heliosheath. As input for our test, we use distributions of the primary ENAs from our MHD-plasma/kinetic-neutral model of the heliosphere-LISM interaction. The magnetic field spectrum for the large-scale interstellar turbulence and an upper limit for the amplitude of small-scale local turbulence (SSLT) generated by protons are taken from observations by Voyager 1 in the LISM. The hybrid simulations of energetic protons are also used to set the bounding wavenumbers for the spectrum of SSLT. Our test supports the “weak scattering” version. This makes an additional solid step on the way to understanding the origin and formation of the IBEX ribbon and thus to improving our understanding of the interaction between the heliosphere and the LISM.

Effects of deep impurities and structural defects in polycrystalline silicon for photovoltaic applications

International Nuclear Information System (INIS)

Galluzzi, F.; Scafe, E.; Beghi, M.; Fossati, S.; Tincani, M.; Pizzini, S.

1985-01-01

An extensive experimental study of minority carrier recombination in CZ grown polycrystalline silicon intentionally doped with metallic impurities (Ti, V, Fe, Cr, Zr) is reported. Experimental values of average diffusion lengths have been compared with values calculated by a simple model of carrier recombination, taking into account the effects of impurities, grain boundaries and intragrain crystal defects. The results are fairly consistent and allow the determination of threshold densities for structural defects and deep impurities. The author's analysis gives a simple quantitative description of recombination processes in solar-grade silicon, as far as the average behaviour is concerned

Electrocatalytic activity of Pt grown by ALD on carbon nanotubes for Si-based DMFC applications

DEFF Research Database (Denmark)

Johansson, Alicia Charlotte; Dalslet, Bjarke Thomas; Yang, R.B.

2012-01-01

in a top-flow ALD reactor at 250°C, using MeCpPtMe3 and O2 as precursors. The anode was tested for the methanol oxidation reaction (MOR) in a three-electrode electrochemical set-up and it showed improved catalytic activity compared to a reference sample of Pt deposited on flat Si. It is demonstrated......We present an anode design for silicon-based direct methanol fuel cell (DMFC) applications. Platinum was deposited conformally by atomic layer deposition (ALD) onto vertically aligned, nitrogendoped multi-walled carbon nanotubes (MWCNTs) grown on porous silicon. The deposition was carried out...... that ALD could be a MEMS compatible deposition technique for Si-based fuel cell applications. © The Electrochemical Society....

Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

NARCIS (Netherlands)

Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

1999-01-01

Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

Are tomorrow's micro-supercapacitors hidden in a forest of silicon nanotrees?

Science.gov (United States)

Thissandier, Fleur; Gentile, Pascal; Brousse, Thierry; Bidan, Gérard; Sadki, Saïd

2014-12-01

Silicon nanotrees (SiNTrs) have been grown by Chemical Vapor Deposition (CVD) via gold catalysis and a three steps process: trunks and branches growth are separated by a new gold catalyst deposition. The influence of growth conditions and the second gold catalyst deposition method on SiNTrs morphology are investigated. SiNTrs based electrodes show a capacitive behavior and better capacitance than the corresponding silicon nanowires (SiNWs) electrode. Electrode capacitance is increased up to 900 μF cm-2, i.e. 150 fold higher than for bulk silicon. Micro-supercapacitors with SiNTrs electrodes have a remarkable stability (only 1.2% loses of their initial capacitance after more than one million cycles). The use of an ionic liquid based electrolyte leads to a high maximum power density (around 225 mW cm-2) which is competitive with Onion Like Carbon based micro-supercapacitors.

ATRF Ribbon-Cutting Ceremony Coincides with Chamber of Commerce Centennial Gala | Poster

Science.gov (United States)

By Frank Blanchard, Staff Writer U.S. Rep. Roscoe Bartlett, NCI Deputy Director for Management John Czajkowski, and SAIC Corporate Chief Executive Officer (CEO) John Jumper were joined by representatives of the Frederick County Chamber of Commerce in cutting the ribbon for the National Cancer Institute’s Advanced Technology Research Facility (ATRF).

75 FR 66766 - NIAID Blue Ribbon Panel Meeting on Adjuvant Discovery and Development

Science.gov (United States)

2010-10-29

..., identifies gaps in knowledge and capabilities, and defines NIAID's goals for the continued discovery...), will convene a Blue Ribbon Panel to provide expertise in developing a strategic plan and research... vaccines. NIAID has developed a draft Strategic Plan and Research Agenda for Adjuvant Discovery and...

Modeling the excitation of graphene plasmons in periodic grids of graphene ribbons: An analytical approach

DEFF Research Database (Denmark)

Gonçalves, P:A.D.; Dias, E. J. C.; Bludov, Yu V.

2016-01-01

We study electromagnetic scattering and subsequent plasmonic excitations in periodic grids of graphene ribbons. To address this problem, we develop an analytical method to describe the plasmon-assisted absorption of electromagnetic radiation by a periodic structure of graphene ribbons forming...... a diffraction grating for THz and mid-IR light. The major advantage of this method lies in its ability to accurately describe the excitation of graphene surface plasmons (GSPs) in one-dimensional (1D) graphene gratings without the use of both time-consuming, and computationally demanding full-wave numerical...... compare the theoretical data with spectra taken from experiments, for which we observe a very good agreement. These theoretical tools may therefore be applied to design new experiments and cutting-edge nanophotonic devices based on graphene plasmonics....

Disorder in silicon films grown epitaxially at low temperature

International Nuclear Information System (INIS)

Schwarzkopf, J.; Selle, B.; Bohne, W.; Roehrich, J.; Sieber, I.; Fuhs, W.

2003-01-01

Homoepitaxial Si films were prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition on Si(100) substrates at temperatures of 325-500 deg. C using H 2 , Ar, and SiH 4 as process gases. The gas composition, substrate temperature, and substrate bias voltage were systematically varied to study the breakdown of epitaxial growth. Information from ion beam techniques, like Rutherford backscattering and heavy-ion elastic recoil detection analysis, was combined with transmission and scanning electron micrographs to examine the transition from ordered to amorphous growth. The results suggest that the breakdown proceeds in two stages: (i) highly defective but still ordered growth with a defect density increasing with increasing film thickness and (ii) formation of conically shaped amorphous precipitates. The hydrogen content is found to be directly related to the degree of disorder which acts as sink for excessive hydrogen. Only in almost perfect epitaxially grown films is the hydrogen level low, and an exponential tail of the H concentration into the crystalline substrate is observed as a result of the diffusive transport of hydrogen

Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

Energy Technology Data Exchange (ETDEWEB)

Díaz-Becerril, T., E-mail: tomas.diaz.be@gmail.com; Herrera, V.; Morales, C.; García-Salgado, G.; Rosendo, E.; Coyopol, A., E-mail: acoyopol@gmail.com; Galeazzi, R.; Romano, R.; Nieto-Caballero, F.G.; Sarmiento, J.

2017-04-15

Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta{sub 2}O{sub 5} and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta{sub 2}O{sub 5-}SiO{sub 2}-Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si{sup +} and Ta{sup +} states respectively. Ta{sub 2}O{sub 5} and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta{sub 2}O{sub 5}/Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.

Growth behaviour of twisted ribbons of barium carbonate/silica self-assembled ceramics

International Nuclear Information System (INIS)

Garcia-Ruiz, J.M.; Moreno, A.

1997-01-01

Twisted ribbons of self-assembled crystal aggregates of barium carbonate, in the presence of silicate ions at pH 9.5 grow at constant rate between 20 and 50 mu m/min. The morphological behaviour depends on temperature, while it was demonstrated to be independent of the viscosity of the growth environment. (Author) 7 refs

Ion-implantation and analysis for doped silicon slot waveguides

Directory of Open Access Journals (Sweden)

McCallum J. C.

2012-10-01

Full Text Available We have utilised ion implantation to fabricate silicon nanocrystal sensitised erbium-doped slot waveguide structures in a Si/SiO2/Si layered configuration and photoluminescence (PL and Rutherford backscattering spectrometry (RBS to analyse these structures. Slot waveguide structures in which light is confined to a nanometre-scale low-index region between two high-index regions potentially offer significant advantages for realisation of electrically-pumped Si devices with optical gain and possibly quantum optical devices. We are currently investigating an alternative pathway in which high quality thermal oxides are grown on silicon and ion implantation is used to introduce the Er and Si-ncs into the SiO2 layer. This approach provides considerable control over the Er and Si-nc concentrations and depth profiles which is important for exploring the available parameter space and developing optimised structures. RBS is well-suited to compositional analysis of these layered structures. To improve the depth sensitivity we have used a 1 MeV α beam and results indicate that a layered silicon-Er:SiO2/silicon structure has been fabricated as desired. In this paper structural results will be compared to Er photoluminescence profiles for samples processed under a range of conditions.

Ellipsometric study of GaN/AIN/Si(111) heterostructures grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Nabi, M. A. U.; Ashfaq, A.; Arshad, M. I.; Ali, A.; Mahmood, K.; Hasan, M. A.; Asghar, M.

2013-01-01

GaN and related structures attracted a great interest in the recent years for electronic and optoelectronic applications due to their promising properties. GaN is grown popularly on foreign substrates like sapphire and SiC. However, silicon due to its favourable properties attended the great attention of material scientists and researchers to utilize as substrate for heteroepitaxy of GaN based structures and devices. Silicon substrates are low cost, available in large diameters and have well characterized thermal and electrical properties. In this study, GaN/AlN/Si(111) heterostructures were grown by molecular beam epitaxy. We performed x-ray diffraction spectroscopy and spectroscopic ellipsometry on these samples to study their structural and optical properties. XRD measurements performed on these samples revealed the presence of high quality GaN films as well as the presence of AlN buffer layer with the following miller indices: GaN (002), GaN (004), GaN (006) and GaN (110) along with Si peak of phase (111). The ellipsometric data obtained were used to characterize the GaN/Si samples as a function of film thickness. Refractive index, extinction coefficient and dielectric constant were calculated by the measured data. (author)

Pulsed Laser Deposition of Zinc Sulfide Thin Films on Silicon: The influence of substrate orientation and preparation on thin film morphology and texture

OpenAIRE

Heimdal, Carl Philip J

2014-01-01

The effect of orientation and preparation of silicon substrates on the growth morphology and crystalline structure of ZnS thin films deposited by pulsed laser deposition (PLD) has been investigated through scanning electron microscopy (SEM) and grazing incidence x-ray diffraction (GIXRD). ZnS thin films were grown on silicon (100) and (111), on HF-treated and untreated silicon (100) as well as substrates coated with Al, Ge and Au. The ZnS films showed entirely different morphologies for ZnS f...

Upconversion photoluminescence of epitaxial Yb{sup 3+}/Er{sup 3+} codoped ferroelectric Pb(Zr,Ti)O{sub 3} films on silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yang, E-mail: zhangy_acd@hotmail.com [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Kämpfe, Thomas [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Bai, Gongxun [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China); Mietschke, Michael; Yuan, Feifei; Zopf, Michael [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Abel, Stefan [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Eng, Lukas M. [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Hühne, Ruben [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Fompeyrine, Jean [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Ding, Fei, E-mail: f.ding@ifw-dresden.de [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Schmidt, Oliver G. [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Material Systems for Nanoelectronics, Chemnitz University of Technology, Reichenhainer strasse 70, 09107 Chemnitz (Germany)

2016-05-31

Thin films of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} (PZT:Yb/Er) have been epitaxially grown on the SrTiO{sub 3} buffered Si wafer by pulsed laser deposition. Strong upconversion photoluminescence was observed in the PZT:Yb/Er thin film. Using piezoresponse force microscopy, polar domains in the PZT:Yb/Er film can be reversibly switched with a phase change of 180°. Ferroelectric hysteresis loop shape with a well-saturated response was observed. The epitaxially grown lanthanide-doped PZT on silicon opens up a promising route to the integration of luminescent functional oxides on the silicon platform. - Highlights: • Epitaxial growth of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} films on SrTiO{sub 3} buffered silicon • Upconversion emissions were obtained from the lanthanide ion doped thin films. • Saturated ferroelectric hysteresis loops were observed. • Polar domains were switched by PFM with a phase change of 180°.

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

Science.gov (United States)

Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

2017-02-01

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

Science.gov (United States)

Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

1987-01-01

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Collapsed adhesion of carbon nanotubes on silicon substrates: continuum mechanics and atomistic simulations

Science.gov (United States)

Yuan, Xuebo; Wang, Youshan

2018-02-01

Carbon nanotubes (CNTs) can undergo collapse from the ordinary cylindrical configurations to bilayer ribbons when adhered on substrates. In this study, the collapsed adhesion of CNTs on the silicon substrates is investigated using both classical molecular dynamics (MD) simulations and continuum analysis. The governing equations and transversality conditions are derived based on the minimum potential energy principle and the energy-variational method, considering both the van der Waals interactions between CNTs and substrates and those inside CNTs. Closed-form solutions for the collapsed configuration are obtained which show good agreement with the results of MD simulations. The stability of adhesive configurations is investigated by analyzing the energy states. It is found that the adhesive states of single-walled CNTs (SWCNTs) (n, n) on the silicon substrates can be categorized by two critical radii, 0.716 and 0.892 nm. For SWCNTs with radius larger than 0.892 nm, they would fully collapse on the silicon substrates. For SWCNTs with radius less than 0.716 nm, the initial cylindrical configuration is energetically favorable. For SWCNTs with radius between two critical radii, the radially deformed state is metastable. The non-contact ends of all collapsed SWCNTs are identical with the same arc length of 2.38 nm. Finally, the role of number of walls on the adhesive configuration is investigated quantitatively. For multi-walled CNTs with the number of walls exceeding a certain value, the cylindrical configuration is stable due to the increasing bending stiffness. The present study can be useful for the design of CNT-based nanodevices.

Overcoming doping limits in MOVPE grown n-doped InP for plasmonic applications

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Xiao, Sanshui; Lavrinenko, Andrei

2015-01-01

Effect of the growth parameters on carrier concentration in MOVPE grown silicon-doped InP is studied. The dopant flow, V/III ratio and substrate temperature are optimized by considering the origin of the doping limits. In addition, two different group V precursors, namely PH3 and TBP, are compare......×1019cm-3 is achieved. Optical properties of the samples are investigated by Fourier transform infrared reflection (FTIR) spectroscopy and are fitted by a Drude-Lorentz function....

Spin-dependent recombination involving oxygen-vacancy complexes in silicon

OpenAIRE

Franke, David P.; Hoehne, Felix; Vlasenko, Leonid S.; Itoh, Kohei M.; Brandt, Martin S.

2014-01-01

Spin-dependent relaxation and recombination processes in $\\gamma$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, t...

Silicon enhanced salt tolerance by improving the root water uptake and decreasing the ion toxicity in cucumber

Directory of Open Access Journals (Sweden)

Shiwen eWang

2015-09-01

Full Text Available Although the effects of silicon application on enhancing plant salt tolerance have been widely investigated, the underlying mechanism has remained unclear. In this study, seedlings of cucumber, a medium silicon accumulator plant, grown in 0.83 mM silicon solution for two weeks were exposed to 65 mM NaCl solution for another one week. The dry weight and shoot/root ratio were reduced by salt stress, but silicon application significantly alleviated these decreases. The chlorophyll concentration, net photosynthetic rate, transpiration rate and leaf water content were higher in plants treated with silicon than in untreated plants under salt stress conditions. Further investigation showed that salt stress decreased root hydraulic conductance (Lp, but that silicon application moderated this salt-induced decrease in Lp. The higher Lp in silicon-treated plants may account for the superior plant water balance. Moreover, silicon application significantly decreased Na+ concentration in the leaves while increasing K+ concentration. Simultaneously, both free and conjugated types of polyamines were maintained at high levels in silicon-treated plants, suggesting that polyamines may be involved in the ion toxicity. Our results indicate that silicon enhances the salt tolerance of cucumber through improving plant water balance by increasing the Lp and reducing Na+ content by increasing polyamine accumulation.

A CMOS-compatible silicon substrate optimization technique and its application in radio frequency crosstalk isolation

International Nuclear Information System (INIS)

Li Chen; Liao Huailin; Huang Ru; Wang Yangyuan

2008-01-01

In this paper, a complementary metal-oxide semiconductor (CMOS)-compatible silicon substrate optimization technique is proposed to achieve effective isolation. The selective growth of porous silicon is used to effectively suppress the substrate crosstalk. The isolation structures are fabricated in standard CMOS process and then this post-CMOS substrate optimization technique is carried out to greatly improve the performances of crosstalk isolation. Three-dimensional electro-magnetic simulation is implemented to verify the obvious effect of our substrate optimization technique. The morphologies and growth condition of porous silicon fabricated have been investigated in detail. Furthermore, a thick selectively grown porous silicon (SGPS) trench for crosstalk isolation has been formed and about 20dB improvement in substrate isolation is achieved. These results demonstrate that our post-CMOS SGPS technique is very promising for RF IC applications. (cross-disciplinary physics and related areas of science and technology)

Piezoresistance of Silicon and Strained Si0.9Ge0.1

DEFF Research Database (Denmark)

Richter, Jacob; Hansen, Ole; Larsen, A. Nylandsted

2005-01-01

We present experimentally obtained results of the piezoresistive effect in p-type silicon and strained Si0.9Ge0.1. Today, strained Si1-xGex is used for high speed electronic devices. This paper investigates if this area of use can be expanded to also cover piezoresistive micro electro mechanical...... systems (MEMS) devices. The measurements are performed on microfabricated test chips where resistors are defined in layers grown by molecular beam epitaxy on (0 0 1) silicon substrates. A uniaxial stress along the [1 1 0] direction is applied to the chip, with the use of a four point bending fixture....... The investigation covers materials with doping levels of N-A = 10(18) cm(-3) and NA = 1019 cm(-3), respectively. The results show that the pi(66) piezoresistive coefficient in strained Si0.9Ge0.1 is approximately 30% larger than the comparable pi(44) piezoresistive coefficient in silicon at a doping level of N...

Carrier transport in polycrystalline silicon thin films solar cells grown on a highly textured structure

Czech Academy of Sciences Publication Activity Database

Honda, Shinya; Takakura, H.; Hamakawa, Y.; Muhida, R.; Kawamura, T.; Harano, T.; Toyama, T.; Okamoto, H.

2004-01-01

Roč. 43, 9A (2004), s. 5955-5959 ISSN 0021-4922 Institutional research plan: CEZ:AV0Z1010914 Keywords : polycrystalline silicon thin film * solar cells * substrate texture Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.142, year: 2004

Effects of silicon deficiency on lipid and carbohydrate metabolism in the diatom Cyclotella cryptica

International Nuclear Information System (INIS)

Roessler, P.G.

1987-01-01

Previous studies have shown that silicon deficiency induces lipid accumulation in certain diatom species. The nature of the lipids produced under these conditions was not investigated, however, and the biochemical mechanisms which underlie this phenomenon were not determined. Research was carried out in order to increase our knowledge concerning the aspects of lipid accumulation in diatoms. The first phase of this project indicated that the diatoms C. cryptica, Cylindrotheca fusiformis, and Thalassiosira pseudonana accumulated storage lipids when grown under silicon-limiting conditions. The ratio of saturated and monounsaturated fatty acids to polyunsaturated fatty acids in C. cryptica cells increased markedly after 24 hours of silicon deficiency. Tracer experiments with [ 14 C]bicarbonate suggested that lipid accumulation in silicon-limited C. cryptica cells was due to two distinct processes: (1) an increase in the amount of newly photoassimilated carbon partitioned into lipids, and (2) a slow conversion of non-lipid compounds (carbohydrates and presumably proteins) into lipids

Improved magnetoimpedance and mechanical properties on nanocrystallization of amorphous Fe{sub 68.5}Si{sub 18.5}Cu{sub 1}Nb{sub 3}B{sub 9} ribbons

Energy Technology Data Exchange (ETDEWEB)

Sahoo, Trilochan [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Proof and Experimental Establishment, Balasore 756025 (India); Majumdar, B. [Defence Metallurgical Research Laboratory, Hyderabad 500068 (India); Srinivas, V., E-mail: veeturi@iitm.ac.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Srinivas, M. [Defence Metallurgical Research Laboratory, Hyderabad 500068 (India); Nath, T.K. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Agarwal, G. [Department of Metallurgical Engineering, Banaras Hindu University, Varanasi 221005 (India)

2013-10-15

The effect of heat-treatment temperature on evolution of microstructures, mechanical and soft magnetic properties and magnetoimpedance (MI) effect in rapidly solidified Fe{sub 68.5}Si{sub 18.5}Cu{sub 1}Nb{sub 3}B{sub 9} ribbons, has been investigated. The as-quenched ribbons were subjected to heat-treatment at different temperatures between 400 and 600 °C for 1 h under high vacuum. Detailed structural studies on the ribbons heat-treated at and above 525 °C revealed the presence of nanocrystalline Fe{sub 3}Si phases embedded in a residual amorphous matrix. The ribbon heat-treated at 550 °C temperature exhibits maximum ductility, maximum relative permeability of 4.8×10{sup 4}, minimum coercivity of 0.1 Oe, and maximum MI value of 62%. The enhanced MI effect is believed to be related to the magnetic softening of 550 °C heat-treated ribbons. However, the magnetic properties and MI effect deteriorated in the samples heat-treated above 550 °C due to the coarsening of grain sizes. The soft magnetic behavior of the nanocrystalline ribbons are discussed in the light of random anisotropy model, whereas the MI effect is discussed through standard skin effect in electrodynamics. - Highlights: • Microstructure was tuned by controlled crystallization to obtain superior magnetic properties. • Improved MI in the heat-treated ribbons is attributed to the superior electromagnetic properties. • Correlation between MI and magnetic properties of nc-Fe{sub 68.5}Si{sub 18.5}Cu{sub 1}Nb{sub 3}B{sub 9} is established. • All the observed features are consistent with the proposed random anisotropy model.

Monolithically interconnected Silicon-Film{trademark} module technology: Annual technical report, 25 November 1997--24 November 1998

Energy Technology Data Exchange (ETDEWEB)

Hall, R.B.; Ford, D.H.; Rand, J.A.; Ingram, A.E.

1999-11-11

AstroPower continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin, light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected array. This report summarizes the work carried out over the first year of a three-year, cost-shared contract, which has yielded the following results: Development of a low-cost, insulating, ceramic substrate that provides mechanical support at silicon growth temperatures, is matched to the thermal expansion of silicon, provides the optical properties required for light trapping through random texturing, and can be formed in large areas on a continuous basis. Different deposition techniques have been investigated, and AstroPower has developed deposition processes for the back conductive layer, the p-type silicon layer, and the mechanical/chemical barrier layer. Polycrystalline films of silicon have been grown on ceramics using AstroPower's Silicon-Film{trademark} process. These films are from 50 to 75 {micro}m thick, with columnar grains extending through the thickness of the film. Aspect ratios from 5:1 to 20:1 have been observed in these films.

Interactive effects of plant-available soil silicon and herbivory on competition between two grass species

Science.gov (United States)

Garbuzov, Mihail; Reidinger, Stefan; Hartley, Susan E.

2011-01-01

Background and Aims The herbivore defence system of true grasses (Poaceae) is predominantly based on silicon that is taken up from the soil and deposited in the leaves in the form of abrasive phytoliths. Silicon uptake mechanisms can be both passive and active, with the latter suggesting that there is an energetic cost to silicon uptake. This study assessed the effects of plant-available soil silicon and herbivory on the competitive interactions between the grasses Poa annua, a species that has previously been reported to accumulate only small amounts of silicon, and Lolium perenne, a high silicon accumulator. Methods Plants were grown in mono- and mixed cultures under greenhouse conditions. Plant-available soil silicon levels were manipulated by adding silicon to the soil in the form of sodium silicate. Subsets of mixed culture pots were exposed to above-ground herbivory by desert locusts (Schistocerca gregaria). Key Results In the absence of herbivory, silicon addition increased biomass of P. annua but decreased biomass of L. perenne. Silicon addition increased foliar silicon concentrations of both grass species >4-fold. Under low soil-silicon availability the herbivores removed more leaf biomass from L. perenne than from P. annua, whereas under high silicon availability the reverse was true. Consequently, herbivory shifted the competitive balance between the two grass species, with the outcome depending on the availability of soil silicon. Conclusions It is concluded that a complex interplay between herbivore abundance, growth–defence trade-offs and the availability of soil silicon in the grasses' local environment affects the outcome of inter-specific competition, and so has the potential to impact on plant community structure. PMID:21868406

A Ribbon-like Structure in the Ejective Organelle of the Green Microalga Pyramimonas parkeae (Prasinophyceae) Consists of Core Histones and Polymers Containing N-acetyl-glucosamine.

Science.gov (United States)

Yamagishi, Takahiro; Kurihara, Akira; Kawai, Hiroshi

2015-11-01

The green microalga, Pyramimonas parkeae (Prasinophyceae) has an ejective organelle containing a coiled ribbon structure resembling the ejectisome in Cryptophyta. This structure is discharged from the cell by a stimulus and extends to form a tube-like structure, but the molecular components of the structure have not been identified. Tricine-SDS-PAGE analysis indicated that the ribbon-like structure of P. parkeae contains some proteins and low molecular acidic polymers. Edman degradation, LC/MS/MS analyses and immunological studies demonstrated that their proteins are core histones (H3, H2A, H2B and H4). In addition, monosaccharide composition analysis of the ribbon-like structures and degradation by lysozyme strongly indicated that the ribbon-like structure consist of β (1-4) linked polymers containing N-acetyl-glucosamine. Purified polymers and recombinant histones formed glob-like or filamentous structures. Therefore we conclude that the ribbon-like structure of P. parkeae mainly consists of a complex of core histones (H3, H2A, H2B and H4) and polymers containing N-acetyl-glucosamine, and suggest to name the ejective organelle in P. parkeae the "histrosome" to distinguish it from the ejectisome in Cryptophyta. Copyright © 2015 Elsevier GmbH. All rights reserved.