Additive Manufacturing of Overhang Structures Using Moisture-Cured Silicone with Support Material

Directory of Open Access Journals (Sweden)

Mohan Muthusamy

2018-04-01

Full Text Available Additive manufacturing (AM of soft materials has a wide variety of applications, such as customized or wearable devices. Silicone is one popular material for these applications given its favorable material properties. However, AM of silicone parts with overhang structures remains challenging due to the soft nature of the material. Overhang structures are the areas where there is no underlying structure. Typically, a support material is used and built in the underlying space so that the overhang structures can be built upon it. Currently, there is no support structure that has been used for AM of silicone. The goal of this study is to develop an AM process to fabricate silicone parts with overhang structures. We first identified and confirmed poly-vinyl alcohol (PVA, a water-soluble material, as a suitable support material for silicone by evaluating the adhesion strength between silicone and PVA. Process parameters for the support material, including critical overhang angle and minimum infill density for the support material, are identified. However, overhang angle alone is not the only determining factor for support material. As silicone is a soft material, it deflects due to its own weight when the height of the overhang structure increases. A finite element model is developed to estimate the critical overhang height paired with different overhang angles to determine whether the use of support material is needed. Finally, parts with overhang structures are printed to demonstrate the capability of the developed process.

The dose distributions of γ ray in the silicon in and near the interfaces of silicon and various materials

International Nuclear Information System (INIS)

Ba Weizhen; Wu Qingzhi; He Chengfa; Chen Chaoyang

1996-01-01

The depth dose distributions of γ ray in the silicon in and near the interfaces of silicon and various materials, such as gold, have been studied. The dose distributions have been compared with equilibrium doses in the homogeneous silicon material, and considerable dose gradient distributions were obtained. In the case of silicon adjacent to high atomic numbered material, dose enhancement effects have been observed in and near the interfaces. The dose gradient distributions were explained by photoelectron effect, Auger effect and secondary electron transport mechanism of the low energy scattering photons

Carbon Cryogel and Carbon Paper-Based Silicon Composite Anode Materials for Lithium-Ion Batteries

Science.gov (United States)

Woodworth, James; Baldwin, Richard; Bennett, William

2010-01-01

A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 6 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-5 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

Porous silicon based anode material formed using metal reduction

Science.gov (United States)

Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

2015-09-22

A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

Implementation Challenges for Sintered Silicon Carbide Fiber Bonded Ceramic Materials for High Temperature Applications

Science.gov (United States)

Singh, M.

2011-01-01

During the last decades, a number of fiber reinforced ceramic composites have been developed and tested for various aerospace and ground based applications. However, a number of challenges still remain slowing the wide scale implementation of these materials. In addition to continuous fiber reinforced composites, other innovative materials have been developed including the fibrous monoliths and sintered fiber bonded ceramics. The sintered silicon carbide fiber bonded ceramics have been fabricated by the hot pressing and sintering of silicon carbide fibers. However, in this system reliable property database as well as various issues related to thermomechanical performance, integration, and fabrication of large and complex shape components has yet to be addressed. In this presentation, thermomechanical properties of sintered silicon carbide fiber bonded ceramics (as fabricated and joined) will be presented. In addition, critical need for manufacturing and integration technologies in successful implementation of these materials will be discussed.

Silicon Composite Anode Materials for Lithium Ion Batteries Based on Carbon Cryogels and Carbon Paper

Science.gov (United States)

Woodworth, James; Baldwin, Richard; Bennett, William

2010-01-01

A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nanofoams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

BUILDING MATERIALS AND PRODUCTS BASED ON SILICON MANGANESE SLAGS

Directory of Open Access Journals (Sweden)

BOLSHAKOV V. I.

2016-05-01

Full Text Available Raising of problem. Currently of particular relevance was given to the matter of introduction in manufacture of building materials and products, resource-saving techniques and technologies; integrated use of raw materials and materials that prevent or significantly reduce their harmful impact on the environment. This allows you to recycle hundreds of thousands of tons of the fiery liquid slags of silicon manganese and to develop effective structural materials that can replace metals, non-metallic building materials of natural origin, concretes, cast stone, plastics and refractories. Purpose. The study of the structure and properties of building materials and products from electric furnace slag of silicon manganese. Conclusion. Slags from the smelting of silicon manganese are classified as acidic. Their lime factor is in the range of 0.47–0.52. The composition of the slag located in the heterogeneous region SiO2 near the line of separation of cristobalite spread to the crystallization of wollastonite, according to the ternary system MnO-CaO-SiO2, which in consideration of their stability, allows the development of technology of building materials (gravel, sand, granulated slag, etc. and products (foundation blocks, road slabs, containers for transportation and storage of hazardous waste, and others.

Comparison of silicone and spin-on glass packaging materials for light-emitting diode encapsulation

Energy Technology Data Exchange (ETDEWEB)

Chang, Liann-Be; Pan, Ke-Wei; Yen, Chia-Yi [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Jeng, Ming-Jer, E-mail: mjjeng@mail.cgu.edu.tw [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Wu, Chun-Te; Hu, Sung-Cheng; Kuo, Yang-Kuao [Chemical Systems Research Division, Chung-Shan Institute of Science and Technology Armaments Bureau, MND, Taoyuan, Taiwan (China)

2014-11-03

Traditional white light light-emitting diode (LED) encapsulation is performed by mixed phosphors and silicone coating on LED die. However, this encapsulation with silicone coating incurs overheated temperatures and yellowing problem. Therefore, this work attempts to replace silicone paste by using spin-on-glass (SOG) materials. Experimental results indicate that although initial brightness of SOG-based packaging is lower than that of silicone packaging, its light attenuation is significantly lower than that of silicone for a long lighting time. After the LED power is turned on for 12 h, the brightness of LED with silicone and SOG material packaging decreases from 84 to 48 lm and 73 to 59 lm, respectively. Therefore, SOG material provides an alternative packaging solution for high power LED lighting applications. - Highlights: • Spin-on-glass (SOG) material was used to replace silicone coating for LED packaging. • Initial brightness of SOG packaging is lower than that of silicone packaging. • Over time, light attenuation in SOG is much lower than that in silicone. • Color rendering index and brightness of LED packaging was optimized by Taguchi method.

Hydrogen interactions with silicon-on-insulator materials

OpenAIRE

Rivera de Mena, A.J.

2003-01-01

The booming of microelectronics in recent decades has been made possible by the excellent properties of the Si/SiO2 interface in oxide on silicon systems.. This semiconductor/insulator combination has proven to be of great value for the semiconductor industry. It has made it possible to continuously increase the number of transistors per chip until the physical limit of integration is now almost reached. Silicon-on-insulator (SOI) materials were early on seen as a step in the logical evolutio...

Process research of non-CZ silicon material

Science.gov (United States)

Campbell, R. B.

1984-01-01

Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

Thermally-isolated silicon-based integrated circuits and related methods

Science.gov (United States)

Wojciechowski, Kenneth; Olsson, Roy H.; Clews, Peggy J.; Bauer, Todd

2017-05-09

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Will silicon be the photonic material of the third millenium?

International Nuclear Information System (INIS)

Pavesi, L

2003-01-01

Silicon microphotonics, a technology which merges photonics and silicon microelectronic components, is rapidly evolving. Many different fields of application are emerging: transceiver modules for optical communication systems, optical bus systems for ULSI circuits, I/O stages for SOC, displays, .... In this review I will give a brief motivation for silicon microphotonics and try to give the state-of-the-art of this technology. The ingredient still lacking is the silicon laser: a review of the various approaches will be presented. Finally, I will try to draw some conclusions where silicon is predicted to be the material to achieve a full integration of electronic and optical devices. (topical review)

Final report. Fabrication of silicon carbide/silicon nitride nanocomposite materials and characterization of their performance; Herstellung von Siliciumcarbid/Siliciumnitrid-Nanocomposite-Werkstoffen und Charakterisierung ihrer Leistungsfaehigkeit. Abschlussbericht

Energy Technology Data Exchange (ETDEWEB)

Westerheide, R.; Woetting, G.; Schmitz, H.W.

1998-07-01

The presented activities were initiated by the well known publications of Niihara and Ishizaki. There, the strengthening and toughening of silicon nitride by nanoscaled silicon carbide particles are described. Both authors have used expensive powder production routes to achieve the optimum mechanical properties. However, for a commercial purpose these routes are not applicable due to their high cost and low reproducibility. The production route chosen by H.C. Starck together with CFI and the Fraunhofer-Institute is a powder synthesis based on the carbothermal reaction of silicon nitride as a low cost synthesis method. The investigations were performed for materials made from synthesis powders and other reference materials. The materials were densified with relatively high amounts of conventional sintering additives by gas pressure sintering. It is shown, that the postulated maxima of strength and fracture toughness behaviour at room temperature with maxima at about 5% to 25% nanoscaled SiC cannot be achieved. However, the mechanical high temperature material behaviour is as good as the behaviour of highly developed silicon nitride materials, which are produced by HIP or by consequent minimisation of the additive content with the well known difficulties to densify these materials. An overview will be given here on the powder production route and their specific problems, the mechanical properties, the microstructure and the possible effects of the microstructure, which result in an improvement of the creep resistance. (orig.)

Process research on non-CZ silicon material

Science.gov (United States)

1982-01-01

High risk, high payoff research areas associated with he process for producing photovoltaic modules using non-CZ sheet material are investigated. All investigations are being performed using dendritic web silicon, but all processes are directly applicable to other ribbon forms of sheet material. The technical feasibility of forming front and back junctions in non-CZ silicon using liquid dopant techniques was determined. Numerous commercially available liquid phosphorus and boron dopant solutions are investigated. Temperature-time profiles to achieve N(+) and P(+) sheet resistivities of 60 + or - 10 and 40 + or - s10 ohms per square centimeter respectively are established. A study of the optimal method of liquid dopant application is performed. The technical feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask was also determined.

Double-shelled silicon anode nanocomposite materials: A facile approach for stabilizing electrochemical performance via interface construction

Science.gov (United States)

Du, Lulu; Wen, Zhongsheng; Wang, Guanqin; Yang, Yan-E.

2018-04-01

The rapid capacity fading induced by volumetric changes is the main issue that hinders the widespread application of silicon anode materials. Thus, double-shelled silicon composite materials where lithium silicate was located between an Nb2O5 coating layer and a silicon active core were configured to overcome the chemical compatibility issues related to silicon and oxides. The proposed composites were prepared via a facile co-precipitation method combined with calcination. Transmission electron microscopy and X-ray photoelectron spectroscopy analysis demonstrated that a transition layer of lithium silicate was constructed successfully, which effectively hindered the thermal inter-diffusion between the silicon and oxide coating layers during heat treatment. The electrochemical performance of the double-shelled silicon composites was enhanced dramatically with a retained specific capacity of 1030 mAh g-1 after 200 cycles at a current density of 200 mA g-1 compared with 598 mAh g-1 for a core-shell Si@Nb2O5 composite that lacked the interface. The lithium silicate transition layer was shown to play an important role in maintaining the high electrochemical stability.

Microstructural Characterization of Reaction-Formed Silicon Carbide Ceramics. Materials Characterization

Science.gov (United States)

Singh, M.; Leonhardt, T. A.

1995-01-01

Microstructural characterization of two reaction-formed silicon carbide ceramics has been carried out by interference layering, plasma etching, and microscopy. These specimens contained free silicon and niobium disilicide as minor phases with silicon carbide as the major phase. In conventionally prepared samples, the niobium disilicide cannot be distinguished from silicon in optical micrographs. After interference layering, all phases are clearly distinguishable. Back scattered electron (BSE) imaging and energy dispersive spectrometry (EDS) confirmed the results obtained by interference layering. Plasma etching with CF4 plus 4% O2 selectively attacks silicon in these specimens. It is demonstrated that interference layering and plasma etching are very useful techniques in the phase identification and microstructural characterization of multiphase ceramic materials.

Minority carrier diffusion lengths and absorption coefficients in silicon sheet material

Science.gov (United States)

Dumas, K. A.; Swimm, R. T.

1980-01-01

Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.

Silicon as an anisotropic mechanical material

DEFF Research Database (Denmark)

Thomsen, Erik Vilain; Reck, Kasper; Skands, Gustav Erik

2014-01-01

While silicon is an anisotropic material it is often in literature treated as an isotropic material when it comes to plate calculations. This leads to considerable errors in the calculated deflection. To overcome this problem, we present an in-depth analysis of the bending behavior of thin crysta...... analytical models involving crystalline plates, such as those often found in the field of micro electro mechanical systems. The effect of elastic boundary conditions is taken into account by using an effective radius of the plate....

Silicon materials outlook study for 1980-85 calendar years

Energy Technology Data Exchange (ETDEWEB)

Costogue, E.; Ferber, R.; Hasbach, W.; Pellin, R.; Yaws, C.

1979-11-01

Photovoltaic solar cell arrays converting solar energy into electrical energy can become a cost-effective, alternative energy source provided that an adequate supply of low-priced solar cell materials and automated fabrication techniques are available. Presently, the photovoltaic industry is dependent upon polycrystalline silicon which is produced primarily for the discrete semiconductor device industry. This dependency is expected to continue until DOE-sponsored new technology developments mature. Recent industry forecasts have predicted a limited supply of polycrystalline silicon material and a shortage could occur in the early 80's. The Jet Propulsion Laboratory's Technology Development and Application Lead Center formed an ad hoc committee at JPL, SERI and consultant personnel to conduct interviews with key polycrystalline manufacturers and a large cross-section of single crystal ingot growers and wafer manufacturers. Industry consensus and conclusions reached from the analysis of the data obtained by the committee are reported. The highlight of the study is that there is a high probability of polycrystalline silicon shortage by the end of CY 1982 and a strong seller's market after CY 1981 which will foster price competition for available silicon.

Characterization of thin-film silicon materials and solar cells through numerical modeling

NARCIS (Netherlands)

Pieters, B.E.

2008-01-01

At present most commercially available solar cells are made of crystalline silicon (c-Si). The disadvantages of crystalline silicon solar cells are the high material cost and energy consumption during production. A cheaper alternative can be found in thin-film silicon solar cells. The thin-film

Study of Pellets and Lumps as Raw Materials in Silicon Production from Quartz and Silicon Carbide

Science.gov (United States)

Dal Martello, E.; Tranell, G.; Gaal, S.; Raaness, O. S.; Tang, K.; Arnberg, L.

2011-10-01

The use of high-purity carbon and quartz raw materials reduces the need for comprehensive refining steps after the silicon has been produced carbothermically in the electric reduction furnace. The current work aims at comparing the reaction mechanisms and kinetics occurring in the inner part of the reduction furnace when pellets or lumpy charge is used, as well as the effect of the raw material mix. Laboratory-scale carbothermic reduction experiments have been carried out in an induction furnace. High-purity silicon carbide and two different high-purity hydrothermal quartzes were charged as raw materials at different molar ratios. The charge was in the form of lumps (size, 2-5 mm) or as powder (size, 10-20 μm), mixed and agglomerated as pellets (size, 1-3 mm) and reacted at 2273 K (2000 °C). The thermal properties of the quartzes were measured also by heating a small piece of quartz in CO atmosphere. The investigated quartzes have different reactivity in reducing atmosphere. The carbothermal reduction experiments show differences in the reacted charge between pellets and lumps as charge material. Solid-gas reactions take place from the inside of the pellets porosity, whereas reactions in lumps occur topochemically. Silicon in pellets is produced mainly in the rim zone. Larger volumes of silicon have been found when using lumpy charge. More SiO is produced when using pellets than for lumpy SiO2 for the same molar ratio and heating conditions. The two SiC polytypes used in the carbothermal reduction experiments as carbon reductants presented different reactivity.

Silicon carbide composites as fusion power reactor structural materials

Energy Technology Data Exchange (ETDEWEB)

Snead, L.L., E-mail: SneadLL@ORNL.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Nozawa, T. [Fusion Research and Development Directorate, Japan Atomic Energy Agency, 2-4 Shirakata Shirane, Tokai, Ibaraki 319-1195 (Japan); Ferraris, M. [Politecnico di Torino-DISMIC c. Duca degli Abruzzi, 24I-10129 Torino (Italy); Katoh, Y. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Shinavski, R. [Hypertherm HTC, 18411 Gothard St., Units A/B/C, Huntington Beach, CA 92648 (United States); Sawan, M. [University of Wisconsin, Madison 417 Engineering Research Building, 1500 Engineering Drive Madison, WI 53706-1687 (United States)

2011-10-01

Silicon carbide was first proposed as a low activation fusion reactor material in the mid 1970s. However, serious development of this material did not begin until the early 1990s, driven by the emergence of composite materials that provided enhanced toughness and an implied ability to use these typically brittle materials in engineering application. In the decades that followed, SiC composite system was successfully transformed from a poorly performing curiosity into a radiation stable material of sufficient maturity to be considered for near term nuclear and non-nuclear systems. In this paper the recent progress in the understanding and of basic phenomenon related to the use of SiC and SiC composite in fusion applications will be presented. This work includes both fundamental radiation effects in SiC and engineering issues such as joining and general materials properties. Additionally, this paper will briefly discuss the technological gaps remaining for the practical application of this material system in fusion power devices such as DEMO and beyond.

Carbon Nanotube Templated Microfabrication of Porous Silicon-Carbon Materials

Science.gov (United States)

Song, Jun; Jensen, David; Dadson, Andrew; Vail, Michael; Linford, Matthew; Vanfleet, Richard; Davis, Robert

2010-10-01

Carbon nanotube templated microfabrication (CNT-M) of porous materials is demonstrated. Partial chemical infiltration of three dimensional carbon nanotube structures with silicon resulted in a mechanically robust material, precisely structured from the 10 nm scale to the 100 micron scale. Nanoscale dimensions are determined by the diameter and spacing of the resulting silicon/carbon nanotubes while the microscale dimensions are controlled by lithographic patterning of the CNT growth catalyst. We demonstrate the utility of this hierarchical structuring approach by using CNT-M to fabricate thin layer chromatography (TLC) separations media with precise microscale channels for fluid flow control and nanoscale porosity for high analyte capacity.

Non-fossil reduction materials in the silicon process - properties and behaviour

Energy Technology Data Exchange (ETDEWEB)

Myrhaug, Edin Henrik

2003-07-01

The purpose of this work has been to clarify the effect of using biocarbon as a reduction material in the silicon process. It was decided to compare the biocarbon with fossil carbon and find possible differences both on process performance and eventually on product quality. The elements in the raw materials added to the silicon process goes into three different products: silicon metal, silica dust and into open air. Based on analysis of raw materials and of produced silicon metal and microsilica extensive material balances have been established. One important result from these are the distribution factors that indicate how much of the trace elements that goes into each medium. Another result is that the boiling point of an element or a compound gives a good indication of were it ends. A high boiling point indicates that the element ends up in the silicon metal, while a low boiling point indicates that the element goes with off-gas into air. With an intermediate boiling point, the element goes into the silica dust. The SiO-reactivity of the reduction materials are commonly acknowledged to affect strongly the productivity and consumption figures of the silicon process. Based on data from thermogravimetric experiments with chemical reaction between carbonaceous spheres and SiO-gas, kinetic parameters have been estimated from the shrinking core model for some selected reduction materials of various sizes and spanning a wide range of SiO-reactivity figures. This model describes the degree of conversion versus time for a single sphere where the chemical reaction progresses in a topochemical manner from the outer surface of the solid towards the centre forming a porous product layer around an unreacted shrinking core. This behaviour is for the selected reduction materials to a large extent supported by an investigation of cross section pictures of fully and 50% converted spheres obtained with a microprobe. The estimated kinetic parameters obtained from the

Silicon materials task of the Low Cost Solar Array Project: Effect of impurities and processing on silicon solar cells

Science.gov (United States)

Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Hanes, M. H.; Rai-Choudhury, P.; Mollenkopf, H. C.

1982-01-01

The effects of impurities and processing on the characteristics of silicon and terrestrial silicon solar cells were defined in order to develop cost benefit relationships for the use of cheaper, less pure solar grades of silicon. The amount of concentrations of commonly encountered impurities that can be tolerated in typical p or n base solar cells was established, then a preliminary analytical model from which the cell performance could be projected depending on the kinds and amounts of contaminants in the silicon base material was developed. The impurity data base was expanded to include construction materials, and the impurity performace model was refined to account for additional effects such as base resistivity, grain boundary interactions, thermal processing, synergic behavior, and nonuniform impurity distributions. A preliminary assessment of long term (aging) behavior of impurities was also undertaken.

Hydrogen in amorphous silicon

International Nuclear Information System (INIS)

Peercy, P.S.

1980-01-01

The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

Hydroxyapatites enriched in silicon – Bioceramic materials for biomedical and pharmaceutical applications

Directory of Open Access Journals (Sweden)

Katarzyna Szurkowska

2017-08-01

Full Text Available Hydroxyapatite (Ca10(PO46(OH2, abbreviated as HA plays a crucial role in implantology, dentistry and bone surgery. Due to its considerable similarity to the inorganic fraction of the mineralized tissues (bones, enamel and dentin, it is used as component in many bone substitutes, coatings of metallic implants and dental materials. Biomaterial engineering often takes advantage of HA capacity for partial ion substitution because the incorporation of different ions in the HA structure leads to materials with improved biological or physicochemical properties. The objective of the work is to provide an overview of current knowledge about apatite materials substituted with silicon ions. Although the exact mechanism of action of silicon in the bone formation process has not been fully elucidated, research has shown beneficial effects of this element on bone matrix mineralization as well as on collagen type I synthesis and stabilization. The paper gives an account of the functions of silicon in bone tissue and outlines the present state of research on synthetic HA containing silicate ions (Si-HA. Finally, methods of HA production as well as potential and actual applications of HA materials modified with silicon ions are discussed.

Evaluation on electrical resistivity of silicon materials after electron ...

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science; Volume 38; Issue 5. Evaluation on ... This research deals with the study of electron beam melting (EBM) methodology utilized in melting silicon material and subsequently discusses on the effect of oxygen level on electrical resistivity change after EBM process. The oxygen ...

Recent Advances in Photoelectrochemical Applications of Silicon Materials for Solar-to-Chemicals Conversion.

Science.gov (United States)

Zhang, Doudou; Shi, Jingying; Zi, Wei; Wang, Pengpeng; Liu, Shengzhong Frank

2017-11-23

Photoelectrochemical (PEC) technology for the conversion of solar energy into chemicals requires cost-effective photoelectrodes to efficiently and stably drive anodic and/or cathodic half-reactions to complete the overall reactions for storing solar energy in chemical bonds. The shared properties among semiconducting photoelectrodes and photovoltaic (PV) materials are light absorption, charge separation, and charge transfer. Earth-abundant silicon materials have been widely applied in the PV industry, and have demonstrated their efficiency as alternative photoabsorbers for photoelectrodes. Many efforts have been made to fabricate silicon photoelectrodes with enhanced performance, and significant progress has been achieved in recent years. Herein, recent developments in crystalline and thin-film silicon-based photoelectrodes (including amorphous, microcrystalline, and nanocrystalline silicon) immersed in aqueous solution for PEC hydrogen production from water splitting are summarized, as well as applications in PEC CO 2 reduction and PEC regeneration of discharged species in redox flow batteries. Silicon is an ideal material for the cost-effective production of solar chemicals through PEC methods. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of silicone rubber-type neutron shielding material

International Nuclear Information System (INIS)

Do, Jae Bum; Cho, Soo Hang; Kim, Ik Soo; Oh, Seung Chul; Hong, Soon Seok; Noh, Sung Ki; Jeong, Duk Yeon.

1997-06-01

Because the exposure to radiation in the nuclear facilities can be fatal to human, it is important to reduce the radiation dose level to a tolerable level. The purpose of this study is to develop highly effective neutron shielding materials for the shipping and storage cask of radioactive materials or in the nuclear/radiation facilities. On this study, we developed silicone rubber based neutron shielding materials and their various material properties, including neutron shielding ability, fire resistance, combustion characteristics, radiation resistance, thermal and mechanical properties were evaluated experimentally. (author). 16 tabs., 17 figs., 25 refs

Silicon-organic pigment material hybrids for photovoltaic application

Energy Technology Data Exchange (ETDEWEB)

Mayer, T.; Weiler, U.; Jaegermann, W. [Institute of Materials Science, Darmstadt University of Technology, Petersenstreet 23, D-64287 Darmstadt (Germany); Kelting, C.; Schlettwein, D. [Institute for Applied Physics, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Makarov, S.; Woehrle, D. [Institute of Organic and Macromolecular Chemistry, University Bremen, Leobener Street NW II, D-28359 Bremen (Germany); Abdallah, O.; Kunst, M. [Department Solar Energy, Hahn-Meitner-Institute, D-14109 Berlin (Germany)

2007-12-14

Hybrid materials of silicon and organic dyes have been investigated for possible application as photovoltaic material in thin film solar cells. High conversion efficiency is expected from the combination of the advantages of organic dyes for light absorption and those of silicon for charge carrier separation and transport. Low temperature remote hot wire chemical vapor deposition (HWCVD) was developed for microcrystalline silicon ({mu}c-Si) deposition using SiH{sub 4}/H{sub 2} mixtures. As model dyes zinc phthalocyanines have been evaporated from Knudsen type sources. Layers of dye on {mu}c-Si and {mu}c-Si on dye films, and composites of simultaneously and sequentially deposited Si and dye have been prepared and characterized. Raman, absorption, and photoemission spectroscopy prove the stability of the organic molecules against the rough HWCVD-Si process. Transient microwave conductivity (TRMC) indicates good electronic quality of the {mu}c-Si matrix. Energy transfer from dye to Si is indicated indirectly by luminescence and directly by photoconductivity measurements. F{sub x}ZnPc pigments with x=0,4,8,16 have been synthesized, purified and adsorbed onto H-terminated Si(1 1 1) for electronic state line up determination by photoelectron spectroscopy. For x=4 and 8 the dye frontier orbitals line up symmetrically versus the Si energy gap offering similar energetic driving forces for electron and hole injection, which is considered optimum for bulk sensitization and indicates a direction to improve the optoelectronic coupling of the organic dyes to silicon. (author)

Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

International Nuclear Information System (INIS)

Wilking, S.; Ebert, S.; Herguth, A.; Hahn, G.

2013-01-01

The degradation effect boron doped and oxygen-rich crystalline silicon materials suffer from under illumination can be neutralized in hydrogenated silicon by the application of a regeneration process consisting of a combination of slightly elevated temperature and carrier injection. In this paper, the influence of variations in short high temperature steps on the kinetics of the regeneration process is investigated. It is found that hotter and longer firing steps allowing an effective hydrogenation from a hydrogen-rich silicon nitride passivation layer result in an acceleration of the regeneration process. Additionally, a fast cool down from high temperature to around 550 °C seems to be crucial for a fast regeneration process. It is suggested that high cooling rates suppress hydrogen effusion from the silicon bulk in a temperature range where the hydrogenated passivation layer cannot release hydrogen in considerable amounts. Thus, the hydrogen content of the silicon bulk after the complete high temperature step can be increased resulting in a faster regeneration process. Hence, the data presented here back up the theory that the regeneration process might be a hydrogen passivation of boron-oxygen related defects

Fine defective structure of silicon carbide powders obtained from different starting materials

Directory of Open Access Journals (Sweden)

Tomila T.V.

2006-01-01

Full Text Available The fine defective structure of silicon carbide powders obtained from silicic acid-saccharose, aerosil-saccharose, aerosil-carbon black, and hydrated cellulose-silicic acid gel systems was investigated. The relation between IR absorption characteristics and the microstructure of SiC particles obtained from different starting materials was established. The numerical relationship between the lattice parameter a and the frequency νTO is presented.

SiC-Based Composite Materials Obtained by Siliconizing Carbon Matrices

Science.gov (United States)

Shikunov, S. L.; Kurlov, V. N.

2017-12-01

We have developed a method for fabrication of parts of complicated configuration from composite materials based on SiC ceramics, which employs the interaction of silicon melt with the carbon matrix having a certain composition and porosity. For elevating the operating temperatures of ceramic components, we have developed a method for depositing protective silicon-carbide coatings that is based on the interaction of the silicon melt and vapor with carbon obtained during thermal splitting of hydrocarbon molecules. The new structural ceramics are characterized by higher operating temperatures; chemical stability; mechanical strength; thermal shock, wear and radiation resistance; and parameters stability.

Mathematical model of silicon smelting process basing on pelletized charge from technogenic raw materials

Science.gov (United States)

Nemchinova, N. V.; Tyutrin, A. A.; Salov, V. M.

2018-03-01

The silicon production process in the electric arc reduction furnaces (EAF) is studied using pelletized charge as an additive to the standard on the basis of the generated mathematical model. The results obtained due to the model will contribute to the analysis of the charge components behavior during melting with the achievement of optimum final parameters of the silicon production process. The authors proposed using technogenic waste as a raw material for the silicon production in a pelletized form using liquid glass and aluminum production dust from the electrostatic precipitators as a binder. The method of mathematical modeling with the help of the ‘Selector’ software package was used as a basis for the theoretical study. A model was simulated with the imitation of four furnace temperature zones and a crystalline silicon phase (25 °C). The main advantage of the created model is the ability to analyze the behavior of all burden materials (including pelletized charge) in the carbothermic process. The behavior analysis is based on the thermodynamic probability data of the burden materials interactions in the carbothermic process. The model accounts for 17 elements entering the furnace with raw materials, electrodes and air. The silicon melt, obtained by the modeling, contained 91.73 % wt. of the target product. The simulation results showed that in the use of the proposed combined charge, the recovery of silicon reached 69.248 %, which is in good agreement with practical data. The results of the crystalline silicon chemical composition modeling are compared with the real silicon samples of chemical analysis data, which showed the results of convergence. The efficiency of the mathematical modeling methods in the studying of the carbothermal silicon obtaining process with complex interphase transformations and the formation of numerous intermediate compounds using a pelletized charge as an additive to the traditional one is shown.

Elite silicon and solar power

International Nuclear Information System (INIS)

Yasamanov, N.A.

2000-01-01

The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production [ru

Surface Coating of Gypsum-Based Molds for Maxillofacial Prosthetic Silicone Elastomeric Material: The Surface Topography.

Science.gov (United States)

Khalaf, Salah; Ariffin, Zaihan; Husein, Adam; Reza, Fazal

2015-07-01

This study aimed to compare the surface roughness of maxillofacial silicone elastomers fabricated in noncoated and coated gypsum materials. This study was also conducted to characterize the silicone elastomer specimens after surfaces were modified. A gypsum mold was coated with clear acrylic spray. The coated mold was then used to produce modified silicone experimental specimens (n = 35). The surface roughness of the modified silicone elastomers was compared with that of the control specimens, which were prepared by conventional flasking methods (n = 35). An atomic force microscope (AFM) was used for surface roughness measurement of silicone elastomer (unmodified and modified), and a scanning electron microscope (SEM) was used to evaluate the topographic conditions of coated and noncoated gypsum and silicone elastomer specimens (unmodified and modified) groups. After the gypsum molds were characterized, the fabricated silicone elastomers molded on noncoated and coated gypsum materials were evaluated further. Energy-dispersive X-ray spectroscopy (EDX) analysis of gypsum materials (noncoated and coated) and silicone elastomer specimens (unmodified and modified) was performed to evaluate the elemental changes after coating was conducted. Independent t test was used to analyze the differences in the surface roughness of unmodified and modified silicone at a significance level of p SEM analysis results showed evident differences in surface smoothness. EDX data further revealed the presence of the desired chemical components on the surface layer of unmodified and modified silicone elastomers. Silicone elastomers with lower surface roughness of maxillofacial prostheses can be obtained simply by coating a gypsum mold. © 2014 by the American College of Prosthodontists.

Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

Energy Technology Data Exchange (ETDEWEB)

Ghulinyan, M., E-mail: ghulinyan@fbk.eu [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Bernard, M.; Bartali, R. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Deptartment of Physics, University of Trento, I-38123 Povo (Italy); Pucker, G. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy)

2015-12-30

Highlights: • Photoresist adhesion induces the formation of complex etch profiles in dielectrics. • Hydrofluoric acid etching of silica glass and silicon nitride materials was studied. • The phenomenon has been modeled in analogy with sonic boom propagation. • The material etch rate and resist adhesion/erosion define the final profile. - Abstract: In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

Electrochemical characterization of carbon coated bundle-type silicon nanorod for anode material in lithium ion secondary batteries

International Nuclear Information System (INIS)

Halim, Martin; Kim, Jung Sub; Choi, Jeong-Gil; Lee, Joong Kee

2015-01-01

Highlights: • Bundle-type silicon nanorods (BSNR) were synthesized by metal assisted chemical etching. • Novel bundle-type nanorods electrode showed self-relaxant characteristics. • The self-relaxant property was enhanced by increasing the silver concentration. • PAA binder enhanced the self-relaxant property of the silicon material. • Carbon coated BSNR (BSNR@C) has evidently provided better cycle performance. - Abstract: Nanostructured silicon synthesis by surface modification of commercial micro-powder silicon was investigated in order to reduce the maximum volume change over cycle. The surface of micro-powder silicon was modified using an Ag metal-assisted chemical etching technique to produce nanostructured material in the form of bundle-type silicon nanorods. The volume change of the electrode using the nanostructured silicon during cycle was investigated using an in-situ dilatometer. Our result shows that nanostructured silicon synthesized using this method showed a self-relaxant characteristic as an anode material for lithium ion battery application. Moreover, binder selection plays a role in enhancing self-relaxant properties during delithiation via strong hydrogen interaction on the surface of the silicon material. The nanostructured silicon was then coated with carbon from propylene gas and showed higher capacity retention with the use of polyacrylic acid (PAA) binder. While the nano-size of the pore diameter control may significantly affect the capacity fading of nanostructured silicon, it can be mitigated via carbon coating, probably due to the prevention of Li ion penetration into 10 nano-meter sized pores

Electrochemical characterization of carbon coated bundle-type silicon nanorod for anode material in lithium ion secondary batteries

Energy Technology Data Exchange (ETDEWEB)

Halim, Martin [Center for Energy Convergence, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Energy and Environmental Engineering, Korea University of Science and Technology, Gwahangno, Yuseong-gu, Daejeon, 305-333 (Korea, Republic of); Kim, Jung Sub [Center for Energy Convergence, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Department of Material Science & Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Choi, Jeong-Gil [Department of Chemical Engineering, Hannam University, 461-1 Junmin-dong, Yusung-gu, Taejon 305-811 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Center for Energy Convergence, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Energy and Environmental Engineering, Korea University of Science and Technology, Gwahangno, Yuseong-gu, Daejeon, 305-333 (Korea, Republic of)

2015-04-15

Highlights: • Bundle-type silicon nanorods (BSNR) were synthesized by metal assisted chemical etching. • Novel bundle-type nanorods electrode showed self-relaxant characteristics. • The self-relaxant property was enhanced by increasing the silver concentration. • PAA binder enhanced the self-relaxant property of the silicon material. • Carbon coated BSNR (BSNR@C) has evidently provided better cycle performance. - Abstract: Nanostructured silicon synthesis by surface modification of commercial micro-powder silicon was investigated in order to reduce the maximum volume change over cycle. The surface of micro-powder silicon was modified using an Ag metal-assisted chemical etching technique to produce nanostructured material in the form of bundle-type silicon nanorods. The volume change of the electrode using the nanostructured silicon during cycle was investigated using an in-situ dilatometer. Our result shows that nanostructured silicon synthesized using this method showed a self-relaxant characteristic as an anode material for lithium ion battery application. Moreover, binder selection plays a role in enhancing self-relaxant properties during delithiation via strong hydrogen interaction on the surface of the silicon material. The nanostructured silicon was then coated with carbon from propylene gas and showed higher capacity retention with the use of polyacrylic acid (PAA) binder. While the nano-size of the pore diameter control may significantly affect the capacity fading of nanostructured silicon, it can be mitigated via carbon coating, probably due to the prevention of Li ion penetration into 10 nano-meter sized pores.

The chemo-mechanical effect of cutting fluid on material removal in diamond scribing of silicon

Science.gov (United States)

Kumar, Arkadeep; Melkote, Shreyes N.

2017-07-01

The mechanical integrity of silicon wafers cut by diamond wire sawing depends on the damage (e.g., micro-cracks) caused by the cutting process. The damage type and extent depends on the material removal mode, i.e., ductile or brittle. This paper investigates the effect of cutting fluid on the mode of material removal in diamond scribing of single crystal silicon, which simulates the material removal process in diamond wire sawing of silicon wafers. We conducted scribing experiments with a diamond tipped indenter in the absence (dry) and in the presence of a water-based cutting fluid. We found that the cutting mode is more ductile when scribing in the presence of cutting fluid compared to dry scribing. We explain the experimental observations by the chemo-mechanical effect of the cutting fluid on silicon, which lowers its hardness and promotes ductile mode material removal.

High mechanical Q-factor measurements on silicon bulk material

Energy Technology Data Exchange (ETDEWEB)

Schwarz, Christian; Nawrodt, Ronny; Heinert, Daniel; Schroeter, Anja; Neubert, Ralf; Thuerk, Matthias; Vodel, Wolfgang; Seidel, Paul [Institut fuer Festkoerperphysik, Helmholtzweg 5, D-07743 Jena (Germany); Tuennermann, Andreas [Institut fuer Angewandte Physik, Albert-Einstein-Strasse 15, D-07745 Jena (Germany)

2008-07-01

The direct observation of gravitational waves is one of the biggest challenges in science. Current detectors are limited by different kinds of noise. One of the fundamental noise sources is thermal noise arising from the optical components. One of the most promising attempts to reduce the thermal noise contribution in future detectors will be the use of high Q-factor materials at cryogenic temperatures. Silicon seems to be the most interesting material due to its excellent optical and thermal properties. We present high Q-factor measurements on bulk samples of high purity silicon in a temperature range from 5 to 300 K. The sample dimensions vary between 76.2 mm x 12..75 mm. The Q-factor exceeds 4.10{sup 8} at 6 K. The influence of the crystal orientation, doping and the sample preparation on the Q-factor is discussed.

Review of New Technology for Preparing Crystalline Silicon Solar Cell Materials by Metallurgical Method

Science.gov (United States)

Li, Man; Dai, Yongnian; Ma, Wenhui; Yang, Bin; Chu, Qingmei

2017-11-01

The goals of greatly reducing the photovoltaic power cost and making it less than that of thermal power to realize photovoltaic power grid parity without state subsidies are focused on in this paper. The research status, key technologies and development of the new technology for preparing crystalline silicon solar cell materials by metallurgical method at home and abroad are reviewed. The important effects of impurities and defects in crystalline silicon on its properties are analysed. The importance of new technology on reducing production costs and improving its quality to increase the cell conversion efficiency are emphasized. The previous research results show that the raw materials of crystalline silicon are extremely abundant. The product of crystalline silicon can meet the quality requirements of solar cell materials: Si ≥ 6 N, P 1 Ω cm, minority carrier life > 25 μs cell conversion efficiency of about 19.3%, the product costs energy consumption energy consumption, low carbon and sustainable development are prospected.

A study on the development of silicon carbide materials for nuclear application

International Nuclear Information System (INIS)

Won, Dong Yeon; Kim, Chan Jung; Lee, Jae Choon; Kim, Joon Hyung; Lim, Kyung Soo; Kim, Ki Baik

1987-12-01

Silicon carbide was synthesized by reaction sintering process from carbon and silicon powders as starting materials. The effects of two processing parameters, i.e., heat treatment time and temperature, were examined (to characterize the reaction sintering process) in terms of the degree of reaction and phase developed during heat treatment. The final products after reaction of silicon and carbon powders were identified as β-SiC having ZnS crystal structure. Sintering of cordierite ceramics which was used as an high temperature inorganic binder to fabricate ceramically bound silicon carbide, and phase identification of the sintered ceramics by X-ray powder diffraction techniques. (Author)

Electrically active sodium-related defect centres in silicon

DEFF Research Database (Denmark)

Dahl, Espen; Madsbøll, J.; Søiland, A.-K.

2013-01-01

Electrically active defect centres related to sodium in silicon have been examined with deep level transient spectroscopy, and their recombination potential analysed with the microwave photoconductive decay technique. In order to investigate the entire silicon band gap for defect centres, both p-...

Efficient Flame Detection and Early Warning Sensors on Combustible Materials Using Hierarchical Graphene Oxide/Silicone Coatings.

Science.gov (United States)

Wu, Qian; Gong, Li-Xiu; Li, Yang; Cao, Cheng-Fei; Tang, Long-Cheng; Wu, Lianbin; Zhao, Li; Zhang, Guo-Dong; Li, Shi-Neng; Gao, Jiefeng; Li, Yongjin; Mai, Yiu-Wing

2018-01-23

Design and development of smart sensors for rapid flame detection in postcombustion and early fire warning in precombustion situations are critically needed to improve the fire safety of combustible materials in many applications. Herein, we describe the fabrication of hierarchical coatings created by assembling a multilayered graphene oxide (GO)/silicone structure onto different combustible substrate materials. The resulting coatings exhibit distinct temperature-responsive electrical resistance change as efficient early warning sensors for detecting abnormal high environmental temperature, thus enabling fire prevention below the ignition temperature of combustible materials. After encountering a flame attack, we demonstrate extremely rapid flame detection response in 2-3 s and excellent flame self-extinguishing retardancy for the multilayered GO/silicone structure that can be synergistically transformed to a multiscale graphene/nanosilica protection layer. The hierarchical coatings developed are promising for fire prevention and protection applications in various critical fire risk and related perilous circumstances.

Why silicon is and will remain the dominant photovoltaic material

Science.gov (United States)

Singh, Rajendra

2009-07-01

Rising demands of energy in emerging economies, coupled with the green house gas emissions related problems around the globe have provided a unique opportunity of exploiting the advantages offered by photovoltaic (PV) systems for green energy electricity generation. Similar to cell phones, power generated by PV systems can reach over two billion people worldwide who have no access to clean energy. Only silicon based PV devices meet the low-cost manufacturing criterion of clean energy conversion (abundance of raw material and no environmental health and safety issues). The use of larger size glass substrates and manufacturing techniques similar to the ones used by the liquid crystal display industry and the large scale manufacturing of amorphous silicon thin films based modules (~ GW per year manufacturing at a single location) can lead to installed PV system cost of $3/Wp. This will open a huge market for grid connected PV systems and related markets. With further research and development, this approach can provide $2/Wp installed PV system costs in the next few years. At this cost level, PV electricity generation is competitive with any other technology, and PV power generation can be a dominant electricity generation technology in the 21st century.

Germanium silicon physics and materials

CERN Document Server

Willardson, R K; Bean, John C; Hull, Robert

1998-01-01

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

Nanostructured silicon for thermoelectric

Science.gov (United States)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2011-06-01

Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

Gold nanorods-silicone hybrid material films and their optical limiting property

Science.gov (United States)

Li, Chunfang; Qi, Yanhai; Hao, Xiongwen; Peng, Xue; Li, Dongxiang

2015-10-01

As a kind of new optical limiting materials, gold nanoparticles have optical limiting property owing to their optical nonlinearities induced by surface plasmon resonance (SPR). Gold nanorods (GNRs) possess transversal SPR absorption and tunable longitudinal SPR absorption in the visible and near-infrared region, so they can be used as potential optical limiting materials against tunable laser pulses. In this letter, GNRs were prepared using seed-mediated growth method and surface-modified by silica coating to obtain good dispersion in polydimethylsiloxane prepolymers. Then the silicone rubber films doped with GNRs were prepared after vulcanization, whose optical limiting property and optical nonlinearity were investigated. The silicone rubber samples doped with more GNRs were found to exhibit better optical limiting performance.

ESP – Data from Restarted Life Tests of Various Silicon Materials

Energy Technology Data Exchange (ETDEWEB)

Schneider, Jim

2010-10-06

Current funding has allowed the restart of testing of various silicone materials placed in Life Tests or Aging Studies from past efforts. Some of these materials have been in test since 1982, with no testing for approximately 10 years, until funding allowed the restart in FY97. Charts for the various materials at different thickness, compression, and temperature combinations illustrate trends for the load-bearing properties of the materials.

Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

Science.gov (United States)

Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

2015-09-02

In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

Application of neutron transmutation doping method to initially p-type silicon material.

Science.gov (United States)

Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

2009-01-01

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

Silicon-Based Nanoscale Composite Energetic Materials

Science.gov (United States)

2013-02-01

1193-1211. 9. Krishnamohan, G., E.M. Kurian, and H.R. Rao, Thermal Analysis and Inverse Burning Rate Studies on Silicon-Potassium Nitrate System...reported in a journal paper and appears in the Appendix. Multiscale Nanoporous Silicon Combustion Introduction for nanoporous silicon effort While

3D silicone rubber interfaces for individually tailored implants.

Science.gov (United States)

Stieghorst, Jan; Bondarenkova, Alexandra; Burblies, Niklas; Behrens, Peter; Doll, Theodor

2015-01-01

For the fabrication of customized silicone rubber based implants, e.g. cochlear implants or electrocortical grid arrays, it is required to develop high speed curing systems, which vulcanize the silicone rubber before it runs due to a heating related viscosity drop. Therefore, we present an infrared radiation based cross-linking approach for the 3D-printing of silicone rubber bulk and carbon nanotube based silicone rubber electrode materials. Composite materials were cured in less than 120 s and material interfaces were evaluated with scanning electron microscopy. Furthermore, curing related changes in the mechanical and cell-biological behaviour were investigated with tensile and WST-1 cell biocompatibility tests. The infrared absorption properties of the silicone rubber materials were analysed with fourier transform infrared spectroscopy in transmission and attenuated total reflection mode. The heat flux was calculated by using the FTIR data, emissivity data from the infrared source manufacturer and the geometrical view factor of the system.

Recent Progress in Synthesis and Application of Low-Dimensional Silicon Based Anode Material for Lithium Ion Battery

Directory of Open Access Journals (Sweden)

Yuandong Sun

2017-01-01

Full Text Available Silicon is regarded as the next generation anode material for LIBs with its ultra-high theoretical capacity and abundance. Nevertheless, the severe capacity degradation resulting from the huge volume change and accumulative solid-electrolyte interphase (SEI formation hinders the silicon based anode material for further practical applications. Hence, a variety of methods have been applied to enhance electrochemical performances in terms of the electrochemical stability and rate performance of the silicon anodes such as designing nanostructured Si, combining with carbonaceous material, exploring multifunctional polymer binders, and developing artificial SEI layers. Silicon anodes with low-dimensional structures (0D, 1D, and 2D, compared with bulky silicon anodes, are strongly believed to have several advanced characteristics including larger surface area, fast electron transfer, and shortened lithium diffusion pathway as well as better accommodation with volume changes, which leads to improved electrochemical behaviors. In this review, recent progress of silicon anode synthesis methodologies generating low-dimensional structures for lithium ion batteries (LIBs applications is listed and discussed.

Signals from fluorescent materials on the surface of silicon micro-strip sensors

CERN Document Server

Sperlich, Dennis; The ATLAS collaboration

2017-01-01

For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker. In order to minimise the amount of material in the detector, circuit boards with readout electronics will be glued on to the active area of the sensor. Several adhesives investigated to be used for the construction of detector modules were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high- radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By pointing the beam both inside the sensor and parallel to the sensor surface, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibility of silicon strip sensors to light contamination from fluorescent mate...

Cobalt nanosheet arrays supported silicon film as anode materials for lithium ion batteries

International Nuclear Information System (INIS)

Huang, X.H.; Wu, J.B.; Cao, Y.Q.; Zhang, P.; Lin, Y.; Guo, R.Q.

2016-01-01

Cobalt nanosheet arrays supported silicon film is prepared and used as anode materials for lithium ion batteries. The film is fabricated using chemical bath deposition, hydrogen reduction and radio-frequency magnetron sputtering techniques. The microstructure and morphology are characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). In this composite film, the silicon layer is supported by interconnected aligned cobalt nanosheet arrays that act as the three-dimensional current collector and buffering network. The electrochemical performance as anode materials for lithium ion batteries is investigated by cyclic voltammetry (CV) and galvanostatic charge-discharge tests. The results show that the film prepared by sputtering for 1500 s exhibits high capacity, good rate capability and stable cycle ability. It is believed that the cobalt nanosheet arrays play important roles in the electrochemical performance of the silicon layer.

Coated silicon comprising material for protection against environmental corrosion

Science.gov (United States)

Hazel, Brian Thomas (Inventor)

2009-01-01

In accordance with an embodiment of the invention, an article is disclosed. The article comprises a gas turbine engine component substrate comprising a silicon material; and an environmental barrier coating overlying the substrate, wherein the environmental barrier coating comprises cerium oxide, and the cerium oxide reduces formation of silicate glass on the substrate upon exposure to corrodant sulfates.

The Microwave Noise Behaviour Of Dual Material Gate Silicon On Insulator

Science.gov (United States)

Jafar, N.; Soin, N.

2009-06-01

This work presents the noise behaviour due to the applied Dual Material Gate (DMG) on the 75 nm n-channel Silicon On Insulator (SOI) device operating in the fully depletion mode, particularly for microwave circuit design. Influences of DMG properties namely the gate length ratio (L1:L2) and gate material workfunction difference (ΔΦM) as well as structural and operational parameters which are silicon thickness (TSi) and threshold voltage (VTH) setting variation on the noise performance were carried out on simulation basis using ATLAS 2D. Results show better noise performance in DMG as compare to the standard gate structure of FD-SOI devices. Higher VTH for DMG design is recommended for minimized noise figure in line with the advantage of inverse VTH roll-off characteristics for short channel effects suppression.

Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects.

Science.gov (United States)

Sun, Shuangxi; Mu, Wei; Edwards, Michael; Mencarelli, Davide; Pierantoni, Luca; Fu, Yifeng; Jeppson, Kjell; Liu, Johan

2016-08-19

For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting of high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, consisting of hundreds of tiny CNTs, were uniformly coated by copper through electroplating, and aspect ratios as high as 300:1 were obtained. The resistivity of this nanomaterial was found to be as low as ∼10(-8) Ω m, which is of the same order of magnitude as the resistivity of copper, and its temperature coefficient was found to be only half of that of pure copper. The main advantage of the composite TSV nanomaterial is that its coefficient of thermal expansion (CTE) is similar to that of silicon, a key reliability factor. A finite element model was set up to demonstrate the reliability of this composite material and thermal cycle simulations predicted very promising results. In conclusion, this composite nanomaterial appears to be a very promising material for future 3D TSV applications offering both a low resistivity and a low CTE similar to that of silicon.

Numerical Simulation Of Silicon-Ribbon Growth

Science.gov (United States)

Woda, Ben K.; Kuo, Chin-Po; Utku, Senol; Ray, Sujit Kumar

1987-01-01

Mathematical model includes nonlinear effects. In development simulates growth of silicon ribbon from melt. Takes account of entire temperature and stress history of ribbon. Numerical simulations performed with new model helps in search for temperature distribution, pulling speed, and other conditions favoring growth of wide, flat, relatively defect-free silicon ribbons for solar photovoltaic cells at economically attractive, high production rates. Also applicable to materials other than silicon.

Silicon photonics fundamentals and devices

CERN Document Server

Deen, M Jamal

2012-01-01

The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

Silicon integrated circuits advances in materials and device research

CERN Document Server

Kahng, Dawon

1981-01-01

Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, an

Temperature and humidity effect on aging of silicone rubbers as sealing materials for proton exchange membrane fuel cell applications

International Nuclear Information System (INIS)

Chang, Huawei; Wan, Zhongmin; Chen, Xi; Wan, Junhua; Luo, Liang; Zhang, Haining; Shu, Shuiming; Tu, Zhengkai

2016-01-01

Highlights: • Aging of silicone rubbers with different hardness was investigated. • Existed water molecules from humidified gases can accelerate the aging process. • Silicone rubber with hardness of 40 is more suitable as sealing materials. • Silicone rubbers can be used as sealing materials below 80 °C but not above 100 °C. - Abstract: Durability and reliability of seals around perimeter of each unit are critical to the lifetime of proton exchange membrane fuel cells. In this study, we investigate the aging of silicone rubbers with different hardness, often used as sealing materials for fuel cells, subjected to dry and humidified air at different temperatures. The aging properties are characterized by variation of permanent compression set value under compression, mechanical properties, and surface morphology as well. The results show that aging of silicone rubbers becomes more severe with the increase in subjected temperature. At temperature above 100 °C, silicone rubbers are not suitable for fuel cell applications. The existed water molecules from humidified gases can accelerate the aging of silicone rubbers. Among the tested samples, silicone rubber with hardness of 40 is more durable than that with hardness of 30 and 50 for fuel cells. The change of chemical structure after aging suggests that the aging of silicone rubbers mainly results from the chemical decomposition of cross-linker units for connection of polysiloxane backbones and of methyl groups attached to silicon atoms.

Materials Chemistry and Performance of Silicone-Based Replicating Compounds.

Energy Technology Data Exchange (ETDEWEB)

Brumbach, Michael T.; Mirabal, Alex James; Kalan, Michael; Trujillo, Ana B; Hale, Kevin

2014-11-01

Replicating compounds are used to cast reproductions of surface features on a variety of materials. Replicas allow for quantitative measurements and recordkeeping on parts that may otherwise be difficult to measure or maintain. In this study, the chemistry and replicating capability of several replicating compounds was investigated. Additionally, the residue remaining on material surfaces upon removal of replicas was quantified. Cleaning practices were tested for several different replicating compounds. For all replicating compounds investigated, a thin silicone residue was left by the replica. For some compounds, additional inorganic species could be identified in the residue. Simple solvent cleaning could remove some residue.

Nano silicon for lithium-ion batteries

International Nuclear Information System (INIS)

Holzapfel, Michael; Buqa, Hilmi; Hardwick, Laurence J.; Hahn, Matthias; Wuersig, Andreas; Scheifele, Werner; Novak, Petr; Koetz, Ruediger; Veit, Claudia; Petrat, Frank-Martin

2006-01-01

New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode

Achievement report for fiscal 1999 on the development of silicon manufacturing process rationalizing energy utilization. Research and study on analysis to put silicon raw material manufacturing technology for solar cells into practical use; 1999 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

In order to support the development and practical application of a mass production technology for manufacturing silicon raw materials for solar cells, research and study were performed on trends of developing the related technologies, and movements in markets and industries. This paper reports the achievements thereof in fiscal 1999. Markets for solar cells are growing favorably, and the worldwide solar cell production in 1999 was 200 MWp, of which 80% or more is occupied by crystalline silicon solar cell. While development of the manufacturing technology for SOG-Si mass-production is in the stage of operation research of pilot plants, it has been verified that problems of impurity contamination was resolved, and high-purity silicon can be manufactured. In developing the silicon scrap utilization technology and a technology to integrate silicon refinement with casting, a conversion efficiency of 14% or higher was acquired in prototype sample substrates. It has been verified that a variety of raw materials can be dealt with by using the above technology, which has a possibility of cost reduction. In developing a substrate manufacturing technology, a great progress has been made in enhancing the productivity and reducing the cost by developing the continuous casting in the electromagnetic casting and the automation technology. (NEDO)

Novel scalable silicone elastomer and poly(2-hydroxyethyl methacrylate) (PHEMA) composite materials for tissue engineering and drug delivery applications

DEFF Research Database (Denmark)

Mohanty, Soumyaranjan; Hemmingsen, Mette; Wojcik, Magdalena

2013-01-01

material with increased hydrophilicity in regard to virgin silicone elastomer, making it suitable as a scaffold for tissue engineering and with the concomitant possibility for delivering drug from the scaffold to the tissue. Interpenetrating polymer networks (IPNs) of silicone elastomer and PHEMA......In recent years hydrogels have received increasing attention as potential materials for applications in regenerative medicine. They can be used for scaffold materials providing structural integrity to tissue constructs, for controlled delivery of drugs and proteins to cell and tissues......, and for support materials in tissue growth. However, the real challenge is to obtain sufficiently good mechanical properties of the hydrogel. The present study shows the combination of two normally non-compatible materials, silicone elastomer and poly(2-hydroxyethyl methacrylate) (PHEMA), into a novel composite...

Material and Energy Flows Associated with Select Metals in GREET 2. Molybdenum, Platinum, Zinc, Nickel, Silicon

Energy Technology Data Exchange (ETDEWEB)

Benavides, Pahola T. [Argonne National Lab. (ANL), Argonne, IL (United States); Dai, Qiang [Argonne National Lab. (ANL), Argonne, IL (United States); Sullivan, John L. [Argonne National Lab. (ANL), Argonne, IL (United States); Kelly, Jarod C. [Argonne National Lab. (ANL), Argonne, IL (United States); Dunn, Jennifer B. [Argonne National Lab. (ANL), Argonne, IL (United States)

2015-09-01

In this work, we analyzed the material and energy consumption from mining to production of molybdenum, platinum, zinc, and nickel. We also analyzed the production of solar- and semiconductor-grade silicon. We described new additions to and expansions of the data in GREET 2. In some cases, we used operating permits and sustainability reports to estimate the material and energy flows for molybdenum, platinum, and nickel, while for zinc and silicon we relied on information provided in the literature.

Process Research on Polycrystalline Silicon Material (PROPSM)

Science.gov (United States)

Culik, J. S.; Wrigley, C. Y.

1985-01-01

Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

N-type nano-silicon powders with ultra-low electrical resistivity as anode materials in lithium ion batteries

Science.gov (United States)

Yue, Zhihao; Zhou, Lang; Jin, Chenxin; Xu, Guojun; Liu, Liekai; Tang, Hao; Li, Xiaomin; Sun, Fugen; Huang, Haibin; Yuan, Jiren

2017-06-01

N-type silicon wafers with electrical resistivity of 0.001 Ω cm were ball-milled to powders and part of them was further mechanically crushed by sand-milling to smaller particles of nano-size. Both the sand-milled and ball-milled silicon powders were, respectively, mixed with graphite powder (silicon:graphite = 5:95, weight ratio) as anode materials for lithium ion batteries. Electrochemical measurements, including cycle and rate tests, present that anode using sand-milled silicon powder performed much better. The first discharge capacity of sand-milled silicon anode is 549.7 mAh/g and it is still up to 420.4 mAh/g after 100 cycles. Besides, the D50 of sand-milled silicon powder shows ten times smaller in particle size than that of ball-milled silicon powder, and they are 276 nm and 2.6 μm, respectively. In addition, there exist some amorphous silicon components in the sand-milled silicon powder excepting the multi-crystalline silicon, which is very different from the ball-milled silicon powder made up of multi-crystalline silicon only.

Silicon oxide based high capacity anode materials for lithium ion batteries

Science.gov (United States)

Deng, Haixia; Han, Yongbong; Masarapu, Charan; Anguchamy, Yogesh Kumar; Lopez, Herman A.; Kumar, Sujeet

2017-03-21

Silicon oxide based materials, including composites with various electrical conductive compositions, are formulated into desirable anodes. The anodes can be effectively combined into lithium ion batteries with high capacity cathode materials. In some formulations, supplemental lithium can be used to stabilize cycling as well as to reduce effects of first cycle irreversible capacity loss. Batteries are described with surprisingly good cycling properties with good specific capacities with respect to both cathode active weights and anode active weights.

Production of technical silicon and silicon carbide from rice-husk

Directory of Open Access Journals (Sweden)

A. Z. Issagulov

2014-10-01

Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

Effective Chemical Route to 2D Nanostructured Silicon Electrode Material: Phase Transition from Exfoliated Clay Nanosheet to Porous Si Nanoplate

International Nuclear Information System (INIS)

Adpakpang, Kanyaporn; Patil, Sharad B.; Oh, Seung Mi; Kang, Joo-Hee; Lacroix, Marc; Hwang, Seong-Ju

2016-01-01

Graphical abstract: Effective morphological control of porous silicon 2D nanoplate can be achieved by the magnesiothermically-induced phase transition of exfoliated silicate clay nanosheets. The promising lithium storage performance of the obtained silicon materials with huge capacity and excellent rate characteristics underscores the prime importance of porously 2D nanostructured morphology of silicon. - Highlights: • 2D nanostructured silicon electrode materials are successfully synthesized via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. • High discharge capacity and rate capability are achieved from the 2D nanoplates of silicon. • Silicon 2D nanoplates can enhance both Li"+ diffusion and charge-transfer kinetics. • 2D nanostructured silicon is beneficial for the cycling stability by minimizing the volume change during lithiation-delithiation. - Abstract: An efficient and economical route for the synthesis of porous two-dimensional (2D) nanoplates of silicon is developed via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. The magnesiothermic reaction of precursor clay nanosheets prepared by the exfoliation and restacking with Mg"2"+ cations yields porous 2D nanoplates of elemental silicon. The variation in the Mg:SiO_2 ratio has a significant effect on the porosity and connectivity of silicon nanoplates. The porous silicon nanoplates show a high discharge capacity of 2000 mAh g"−"1 after 50 cycles. Of prime importance is that this electrode material still retains a large discharge capacity at higher C-rates, which is unusual for the elemental silicon electrode. This is mainly attributed to the improved diffusion of lithium ions, charge-transfer kinetics, and the preservation of the electrical connection of the porous 2D plate-shaped morphology. This study highlights the usefulness of clay mineral as an economical and scalable precursor of high-performance silicon electrodes with

HRTEM analysis of the nanostructure of porous silicon

International Nuclear Information System (INIS)

Martin-Palma, R.J.; Pascual, L.; Landa-Canovas, A.R.; Herrero, P.; Martinez-Duart, J.M.

2006-01-01

The nanometric structure of porous silicon makes this material to be very suitable for its use in many different fields, including optoelectronics and biological applications. In the present work, the structure of porous silicon was investigated in detail by means of cross-sectional high-resolution transmission electron microscopy and digital image processing, together with electron energy loss spectroscopy. The structure of the Si/porous silicon interface and that of the silicon nanocrystals that compose porous silicon have been analyzed in detail. A strong strain contrast in the Si/porous silicon interface caused by high stresses was observed. Accordingly, dislocation pairs are found to be a possible mechanism of lattice matching between porous silicon and the Si substrate. Finally, high relative concentration of oxygen in the porous silicon layer was observed, together with low relative electron concentration in the conduction band when compared to Si

Characterization of silicon sensor materials and designs for the CMS Tracker Upgrade

CERN Document Server

Dierlamm, Alexander Hermann

2012-01-01

During the high luminosity phase of the LHC (HL-LHC, starting around 2020) the inner tracking system of CMS will be exposed to harsher conditions than the current system was designed for. Therefore a new tracker is planned to cope with higher radiation levels and higher occupancies. Within the strip sensor developments of CMS a comparative survey of silicon materials and technologies is being performed in order to identify the baseline material for the future tracker. Hence, a variety of materials (float-zone, magnetic Czochralski and epitaxially grown silicon with thicknesses from 50$\\mu$m to 320$\\mu$m as p- and n-type) has been processed at one company (Hamamatsu Photonics K.K.), irradiated (proton, neutron and mixed irradiations up to 1.5e15n$_{eq}$/cm$^2$ and beyond) and tested under identical conditions. The wafer layout includes a variety of devices to investigate different aspects of sensor properties like simple diodes, test-structures, small strip sensors and a strip sensor array with varying strip p...

Energy Conversion Properties of ZnSiP2, a Lattice-Matched Material for Silicon-Based Tandem Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Martinez, Aaron D.; Warren, Emily L.; Gorai, Prashun; Borup, Kasper A.; Krishna, Lakshmi; Kuciauskas, Darius; Dippo, Patricia C.; Ortiz, Brenden R.; Stradins, Paul; Stevanovic, Vladan; Toberer, Eric S.; Tamboli, Adele C.

2016-11-21

ZnSiP2 demonstrates promising potential as an optically active material on silicon. There has been a longstanding need for wide band gap materials that can be integrated with Si for tandem photovoltaics and other optoelectronic applications. ZnSiP2 is an inexpensive, earth abundant, wide band gap material that is stable and lattice matched with silicon. This conference proceeding summarizes our PV-relevant work on bulk single crystal ZnSiP2, highlighting the key findings and laying the ground work for integration into Si-based tandem devices.

[Influence of autoclave sterilization on dimensional stability and detail reproduction of 5 additional silicone impression materials].

Science.gov (United States)

Xu, Tong-kai; Sun, Zhi-hui; Jiang, Yong

2012-03-01

To evaluate the dimensional stability and detail reproduction of five additional silicone impression materials after autoclave sterilization. Impressions were made on the ISO 4823 standard mold containing several marking lines, in five kinds of additional silicone. All the impressions were sterilized by high temperature and pressure (135 °C, 212.8 kPa) for 25 min. Linear measurements of pre-sterilization and post-sterilization were made with a measuring microscope. Statistical analysis utilized single-factor analysis with pair-wise comparison of mean values when appropriate. Hypothesis testing was conducted at alpha = 0.05. No significant difference was found between the pre-sterilization and post-sterilization conditions for all locations, and all the absolute valuse of linear rate of change less than 8%. All the sterilization by the autoclave did not affect the surfuce detail reproduction of the 5 impression materials. The dimensional stability and detail reproduction of the five additional silicone impression materials in the study was unaffected by autoclave sterilization.

Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

International Nuclear Information System (INIS)

Yin, Lan; Harburg, Daniel V.; Rogers, John A.; Bozler, Carl; Omenetto, Fiorenzo

2015-01-01

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems

Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

Energy Technology Data Exchange (ETDEWEB)

Yin, Lan; Harburg, Daniel V.; Rogers, John A., E-mail: jrogers@illinois.edu [Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S Goodwin Ave., Urbana, Illinois 61801 (United States); Bozler, Carl [Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420 (United States); Omenetto, Fiorenzo [Department of Biomedical Engineering, Department of Physics, Tufts University, 4 Colby St., Medford, Massachusetts 02155 (United States)

2015-01-05

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

Silicon radiation detectors: materials and applications

International Nuclear Information System (INIS)

Walton, J.T.; Haller, E.E.

1982-10-01

Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented

Reactive Melt Infiltration Of Silicon Into Porous Carbon

Science.gov (United States)

Behrendt, Donald R.; Singh, Mrityunjay

1994-01-01

Report describes study of synthesis of silicon carbide and related ceramics by reactive melt infiltration of silicon and silicon/molybdenum alloys into porous carbon preforms. Reactive melt infiltration has potential for making components in nearly net shape, performed in less time and at lower temperature. Object of study to determine effect of initial pore volume fraction, pore size, and infiltration material on quality of resultant product.

Use of Monocrystalline Silicon as Tool Material for Highly Accurate Blanking of Thin Metal Foils

International Nuclear Information System (INIS)

Hildering, Sven; Engel, Ulf; Merklein, Marion

2011-01-01

The trend towards miniaturisation of metallic mass production components combined with increased component functionality is still unbroken. Manufacturing these components by forming and blanking offers economical and ecological advantages combined with the needed accuracy. The complexity of producing tools with geometries below 50 μm by conventional manufacturing methods becomes disproportional higher. Expensive serial finishing operations are required to achieve an adequate surface roughness combined with accurate geometry details. A novel approach for producing such tools is the use of advanced etching technologies for monocrystalline silicon that are well-established in the microsystems technology. High-precision vertical geometries with a width down to 5 μm are possible. The present study shows a novel concept using this potential for the blanking of thin copper foils with monocrystallline silicon as a tool material. A self-contained machine-tool with compact outer dimensions was designed to avoid tensile stresses in the brittle silicon punch by an accurate, careful alignment of the punch, die and metal foil. A microscopic analysis of the monocrystalline silicon punch shows appropriate properties regarding flank angle, edge geometry and surface quality for the blanking process. Using a monocrystalline silicon punch with a width of 70 μm blanking experiments on as-rolled copper foils with a thickness of 20 μm demonstrate the general applicability of this material for micro production processes.

Effects of material non-linearity on the residual stresses in a dendritic silicon crystal ribbon

Science.gov (United States)

Ray, Sujit K.; Utku, Senol

1990-01-01

Thermal stresses developed in a dendritic silicon crystal ribbon have been shown to cause plastic deformation and residual stresses in the ribbon. This paper presents an implementation of a numerical model proposed for thermoelastoplastic behavior of a material. The model has been used to study the effects of plasticity of silicon on the residual stresses. The material properties required to implement this model are all assumed, and the response of the material to the variations in these assumed parameters of the constitutive law and in the finite element mesh is investigated. The steady state growth process is observed to be periodic with nonzero residual stresses. Numerical difficulties are also encountered in the computer solution process, resulting in sharp jumps and large oscillations in the stress responses.

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

International Nuclear Information System (INIS)

Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.

1997-12-01

Epitaxial grown thick layers (≥ 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 x 10 12 cm -3 ) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E p = 24 GeV) with a fluence of 1.5 x 10 11 cm -2 , no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ''sinking'' process, however, becomes non-effective at high radiation fluences (10 14 cm -2 ) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 x 10 14 cm -2 the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 x 10 12 cm -3 after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon

Material Properties of Laser-Welded Thin Silicon Foils

Directory of Open Access Journals (Sweden)

M. T. Hessmann

2013-01-01

Full Text Available An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1 laser spot welding with low constant feed speed, (2 laser line welding, and (3 keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.

Irradiation study of different silicon materials for the CMS tracker upgrade

International Nuclear Information System (INIS)

Erfle, Joachim

2014-05-01

Around 2022, an upgrade of the LHC collider complex is planned to significantly increase the luminosity (the High Luminosity LHC, HL-LHC). This means that the experiments have to cope with a higher number of collisions per bunch crossing and survive in a radiation environment much harsher than that at the present LHC. Especially the tracking detectors have to be improved for the HL-LHC. The increased number of tracks requires an increase of the number of readout channels while the higher radiation makes new sensor materials necessary. Within CMS, a measurement campaign was initiated to study the performance of different silicon materials in a corresponding radiation environment. To simulate the expected radiation the samples were irradiated with neutrons and with protons with two different energies. Radiation damage can be divided in two categories. First, ionizing energy loss in the surface isolation layers of the sensor leads to a change of the concentration of charged states in the sensor surface and therefore alters the distribution of the electrical fields in the sensor. Second, non-ionizing energy loss in the bulk of the sensor material leads to a variety of defects in the silicon lattice. Electrically active defects can influence the material properties. The three properties under investigation are the reverse current, the full depletion voltage and the charge collection. While the reverse current and full depletion voltage influence the power dissipation and the noise of the detector, the charge collection directly influences the measurement. The material properties were studied using pad and strip sensor. The structures were electrically characterized before and after irradiation with different fluences of neutrons and protons, corresponding to the expected fluences at different radii of the outer tracker after 3000 fb -1 . The charge collection measurements were mainly performed using the ALiBaVa readout system and the charge was induced with �

Aerosol-assisted extraction of silicon nanoparticles from wafer slicing waste for lithium ion batteries.

Science.gov (United States)

Jang, Hee Dong; Kim, Hyekyoung; Chang, Hankwon; Kim, Jiwoong; Roh, Kee Min; Choi, Ji-Hyuk; Cho, Bong-Gyoo; Park, Eunjun; Kim, Hansu; Luo, Jiayan; Huang, Jiaxing

2015-03-30

A large amount of silicon debris particles are generated during the slicing of silicon ingots into thin wafers for the fabrication of integrated-circuit chips and solar cells. This results in a significant loss of valuable materials at about 40% of the mass of ingots. In addition, a hazardous silicon sludge waste is produced containing largely debris of silicon, and silicon carbide, which is a common cutting material on the slicing saw. Efforts in material recovery from the sludge and recycling have been largely directed towards converting silicon or silicon carbide into other chemicals. Here, we report an aerosol-assisted method to extract silicon nanoparticles from such sludge wastes and their use in lithium ion battery applications. Using an ultrasonic spray-drying method, silicon nanoparticles can be directly recovered from the mixture with high efficiency and high purity for making lithium ion battery anode. The work here demonstrated a relatively low cost approach to turn wafer slicing wastes into much higher value-added materials for energy applications, which also helps to increase the sustainability of semiconductor material and device manufacturing.

X-Ray Researches GF Siliconized Materials on Pyrocarbon Sheaf and on the Basis of Graphite of Mark EG-0

International Nuclear Information System (INIS)

Gurin, V.A.; Gurin, I.V.; Kovtun, G.P.; Malykhin, D.G.; Bukolov, A.N.

2005-01-01

A methodological addition to a quantitative analysis of binary phase structure of materials on measurements of X-ray lines intensities worked out conformably to research of siliconized graphitic materials. Distinctions in X-rays absorption factors of phase components at a various degree of phases mixture are taken into account. An apparatus of the probability theory is applied. A parameter of mixture degree of phases is submitted as a specific area size of interphase. Quantitative X-ray researches of a phase structure of siliconized materials are carried out on the basis of carbon fabrics and graphitic powders; both were sheafed by pyrocarbon. In examined samples structures C-SiC and SiC-Si were obtained. The correlation of the phase structure of materials with the apparent density of the initial carbon basis is seen. The opportunity of a practical obtaining of materials with the host degree of their siliconizing is confirmed

Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

Science.gov (United States)

Juda, U.; Scheerer, O.; Höhne, M.; Riemann, H.; Schilling, H.-J.; Donecker, J.; Gerhardt, A.

1996-09-01

A monoclinic 1-platinum defect recently detected was investigated more thoroughly by electron paramagnetic resonance (EPR). The defect is one of the dominating defects in platinum doped silicon. With a perfect reproducibility it is observed in samples prepared from n-type silicon as well as from p-type silicon, in float zone (FZ) silicon as well as in Czochralski (Cz) silicon. Its concentration varies with the conditions of preparation and nearly reaches that of isolated substitutional platinum in Cz silicon annealed for 2 h at 540 °C after quenching from the temperature of platinum diffusion. Because of its concentration which in Cz-Si exceeds that in FZ-Si the defect is assumed to be oxygen-related though a hyperfine structure with 17O could not be resolved. The defect causes a level close to the valence band. This is concluded from variations of the Fermi level and from a discussion of the spin Hamiltonian parameters. In photo-EPR experiments the defect is coupled to recently detected acceptorlike self-interstitial related defects (SIRDs); their level position turns out to be near-midgap. These defects belong to the lifetime limiting defects in Pt-doped Si.

The role of nitrogen in the formation of oxygen-related thermal donors in silicon

International Nuclear Information System (INIS)

Griffin, J.A.; Hartung, J.; Weber, J.

1989-01-01

Nitrogen doped silicon is investigated by Photothermal Ionisation Spectroscopy (PTIS) and Infrared Absorption (IR). The Shallow Thermal Donors (STD) are observed in this nitrogen doped Cz-silicon as well as the deeper Thermal Donors (TD). The Thermal Donor Growth in nitrogen doped material is reduced in comparison to nominally undoped oxygen-rich silicon. The half-widths of the spectral lines arising from the STD-transitions are observed to be dependent on the nitrogen concentration. The results suggest only a catalytic role of N in the STD-growth. (author) 13 refs., 3 figs., 1 tab

Joining elements of silicon carbide

International Nuclear Information System (INIS)

Olson, B.A.

1979-01-01

A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

Science.gov (United States)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Development of low cost silicon solar cells by reusing the silicon saw dust collected during wafering process

International Nuclear Information System (INIS)

Zaidi, Z.I.; Raza, B.; Ahmed, M.; Sheikh, H.; Qazi, I.A.

2002-01-01

Silicon material due to its abundance in nature and maximum conversion efficiency has been successfully being used for the fabrication of electronic and photovoltaic devices such as ICs, diodes, transistors and solar cells. The 80% of the semiconductor industry is ruled by silicon material. Single crystal silicon solar cells are in use for both space and terrestrial application, due to the well developed technology and better efficiency than polycrystalline and amorphous silicon solar cells. The current research work is an attempt to reduce the cost of single crystal silicon solar cells by reusing the silicon saw dust obtained during the watering process. During the watering process about 45% Si material is wasted in the form of Si powder dust. Various waste powder silicon samples were analyzed using inductively Coupled Plasma (ICP) technique, for metallic impurities critical for solar grade silicon material. The results were evaluated from impurity and cost point of view. (author)

Report for fiscal 1998 on results of research and development of silicon-based polymeric material; 1998 nendo keisokei kobunshi zairyo no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

The research and development of 'silicon-based polymeric materials' has been implemented under ten year plan since 1991 by the research and development system for industrial science and technology, with the following subjects conducted in the general accounting section of fiscal 1998. In the research and development of the synthetic technology of electrically conductive silicon-based polymeric materials, a synthetic method was established for unsaturated side-chain group polysilanes as a basic structural unit for structuring multidimensions. In the research and development of the synthetic technology of new silicon-based polymeric materials capable of plotting circuits, network-shaped polysilanes with various amino groups introduced were synthesized, for which electrical conductivity and temperature dependency were measured. In the research and development of new silicon-based polymeric materials with an electro-luminous function and the like, polymeric synthesis began developing smoothly that has hole-transporting and electron transporting properties concerning the electro-luminous function. In the research and development of silicon-based photoelectric conversion materials, examination was made on the improvement of photoelectric conversion performance by materialization technology including lamination and mixture. The general investigation and research committee contrived further advancement of the research and development. (NEDO)

Modeling the mechanical and aging properties of silicone rubber and foam - stockpile-historical & additively manufactured materials

Energy Technology Data Exchange (ETDEWEB)

Maiti, A; Weisgraber, T H; Gee, R H

2014-09-30

M97* and M9763 belong to the M97xx series of cellular silicone materials that have been deployed as stress cushions in some of the LLNL systems. Their purpose of these support foams is to distribute the stress between adjacent components, maintain relative positioning of various components, and mitigate the effects of component size variation due to manufacturing and temperature changes. In service these materials are subjected to a continuous compressive strain over long periods of time. In order to ensure their effectiveness, it is important to understand how their mechanical properties change over time. The properties we are primarily concerned about are: compression set, load retention, and stress-strain response (modulus).

FY 1991 Report on the results of the research and development of silicon-based high-molecular-weight materials; 1991 nendo keisokei kobunshi zairyo no kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1992-03-01

The research and development project has been started to establish the basic technologies for molecular designs, synthesis, material production and evaluation of silicon-based high-molecular-weight materials expected to exhibit excellent characteristics, e.g., electro-optical functions, resistance to heat, flame retardance and mechanical properties. The efforts in FY 1991, the first year for the 10-year project, are mainly directed to the surveys on the R and D trends, both domestic and foreign, to clarify the relationship between the structures and functions/properties. The R and D projects followed include the technologies for synthesizing (1) electroconductive silicon-based high-molecular-weight materials, (2) novel silicon-based high-molecular-weight materials capable of drawing circuits, (3) novel, light-emitting silicon-based high-molecular-weight materials and (4) silicon-based opto-electric conversion materials for the electro-optical functional high-molecular-weight materials; and (1) synthesis of high-molecular-weight structural materials of sea island structure, (2) technologies for forming inter-penetrating type structures (IPN), (3) development of composite structural materials of organometallic complex and silicon-based high-molecular-weight material, and (4) development of silicon-based high-molecular-weight materials of ring structure for the high-molecular-weight structural materials. (NEDO)

Work plan for testing silicone impression material and fixture on pool cell capsule

International Nuclear Information System (INIS)

Lundeen, J.E.

1994-01-01

The purpose of this work plan is to provide a safe procedure to test a cesium capsule impression fixture at Waste Encapsulation and Storage Facility (WESF). The impression will be taken with silicone dental impression material pressed down upon the capsule using the impression fixture. This test will evaluate the performance of the fixture and impression material under high radiation and temperature conditions on a capsule in a WESF pool cell

Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications

Science.gov (United States)

Wellmann, Peter; Syväjärvi, Mikael; Ou, Haiyan

2014-03-01

silicon oxycarbide material can provide potential applications of the Eu luminescent materials to challenging conditions like high temperatures or aggressive environments where the silica has weaknesses. In some approaches, silicon rich silicon oxide that contain silicon nanoclusters emit red to near infrared luminescence due to quantum confinement effects while luminescence at shorter wavelength is difficult due to the interplay of defects and quantum confinement effects. In addition it is applicable as low-k dielectric, etch-stop and passivation layers. It also has an optical band-gap that is smaller than that of SiO2 which may facilitate carrier injection at lower voltages that is suitable for optoelectronics. From materials perspective of emerging materials, it seems distant to consider system related issues. The future demands on communication and lighting devices require higher information flows in modernized optical devices, for example by replacing electrical interconnects with their optical counterparts and tunable backgrounds filters for integrated optics or photonics applications. However, there are materials issues related to such device performance, for example by a non-linearity, that provide the possibility for selective removal or addition of wavelengths using hetero structures in which one side of the structure enhances the light-to-dark sensitivity of long and medium wavelength channels and diminish others, and an opposite behavior in other face of the structure. Certainly materials may be applied in various innovative ways to provide new performances in devices and systems. In any materials and device evaluation, reliability issues in passivation and packaging of semiconductor device structures provide a base knowledge that may be used to evaluate new concepts. Fundamental aspects of dielectric constant, bandgap and band offsets between the valence and conduction band edges between the passivation layer and the semiconductor create a foundation for

Ion beam figuring of silicon aspheres

Science.gov (United States)

Demmler, Marcel; Zeuner, Michael; Luca, Alfonz; Dunger, Thoralf; Rost, Dirk; Kiontke, Sven; Krüger, Marcus

2011-03-01

Silicon lenses are widely used for infrared applications. Especially for portable devices the size and weight of the optical system are very important factors. The use of aspherical silicon lenses instead of spherical silicon lenses results in a significant reduction of weight and size. The manufacture of silicon lenses is more challenging than the manufacture of standard glass lenses. Typically conventional methods like diamond turning, grinding and polishing are used. However, due to the high hardness of silicon, diamond turning is very difficult and requires a lot of experience. To achieve surfaces of a high quality a polishing step is mandatory within the manufacturing process. Nevertheless, the required surface form accuracy cannot be achieved through the use of conventional polishing methods because of the unpredictable behavior of the polishing tools, which leads to an unstable removal rate. To overcome these disadvantages a method called Ion Beam Figuring can be used to manufacture silicon lenses with high surface form accuracies. The general advantage of the Ion Beam Figuring technology is a contactless polishing process without any aging effects of the tool. Due to this an excellent stability of the removal rate without any mechanical surface damage is achieved. The related physical process - called sputtering - can be applied to any material and is therefore also applicable to materials of high hardness like Silicon (SiC, WC). The process is realized through the commercially available ion beam figuring system IonScan 3D. During the process, the substrate is moved in front of a focused broad ion beam. The local milling rate is controlled via a modulated velocity profile, which is calculated specifically for each surface topology in order to mill the material at the associated positions to the target geometry. The authors will present aspherical silicon lenses with very high surface form accuracies compared to conventionally manufactured lenses.

Small-scale, self-propagating combustion realized with on-chip porous silicon.

Science.gov (United States)

Piekiel, Nicholas W; Morris, Christopher J

2015-05-13

For small-scale energy applications, energetic materials represent a high energy density source that, in certain cases, can be accessed with a very small amount of energy input. Recent advances in microprocessing techniques allow for the implementation of a porous silicon energetic material onto a crystalline silicon wafer at the microscale; however, combustion at a small length scale remains to be fully investigated, particularly with regards to the limitations of increased relative heat loss during combustion. The present study explores the critical dimensions of an on-chip porous silicon energetic material (porous silicon + sodium perchlorate (NaClO4)) required to propagate combustion. We etched ∼97 μm wide and ∼45 μm deep porous silicon channels that burned at a steady rate of 4.6 m/s, remaining steady across 90° changes in direction. In an effort to minimize the potential on-chip footprint for energetic porous silicon, we also explored the minimum spacing between porous silicon channels. We demonstrated independent burning of porous silicon channels at a spacing of 0.5 m on a chip surface area of 1.65 cm(2). Smaller porous silicon channels of ∼28 μm wide and ∼14 μm deep were also utilized. These samples propagated combustion, but at times, did so unsteadily. This result may suggest that we are approaching a critical length scale for self-propagating combustion in a porous silicon energetic material.

Report for fiscal 1998 on results of research and development of silicon-based polymeric material. Material research for the liquid methane fueled aircraft engine; 1998 nendo keisokei kobunshi zairyo no kenkyu kaihatsu seika hokokusho. Methane nenryo kokukiyo engine kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

Research was conducted for the purpose of establishing basic technology concerning molecular design, synthesis, material formation, and evaluation of silicon-based polymers which are expected to provide superior electronic/optical functions, high heat/combustion resistance and dynamic properties. The research subjects were such as following: research and development of silicon-based polymeric materials with sea-island microstructures; research and development of silicon-based polymeric materials with sea-island microstructures; research and development on IPN formation with silicon-based polymers; research and development of hybrid silicon polymers with organometallic compounds; research and development of silicon containing polymer materials with ring structures; general committee for investigation and research; the optimized low-temperature Wurtz synthesis and modification of polysilanes; study of unsaturated and hypercoordinate organosilicon compounds; basic studies on the synthesis and properties of silicon-based high polymers; studies of new monomer-synthesis and their polymerization reaction; studies on new method of preparation and functionalization of polysilanes; novel applications of silicon-based polymers in imaging devices for information display, memory, and recordings; and molecular design of silicon-containing {pi}-conjugated and {sigma}-conjugated compounds. (NEDO)

Self-assembled peptide nanotubes as an etching material for the rapid fabrication of silicon wires

DEFF Research Database (Denmark)

Larsen, Martin Benjamin Barbour Spanget; Andersen, Karsten Brandt; Svendsen, Winnie Edith

2011-01-01

This study has evaluated self-assembled peptide nanotubes (PNTS) and nanowires (PNWS) as etching mask materials for the rapid and low-cost fabrication of silicon wires using reactive ion etching (RIE). The self-assembled peptide structures were fabricated under mild conditions and positioned on c...... characterization by SEM and I-V measurements. Additionally, the fabricated silicon structures were functionalized with fluorescent molecules via a biotin-streptavidin interaction in order to probe their potential in the development of biosensing devices....

Clathrates and beyond: Low-density allotropy in crystalline silicon

Energy Technology Data Exchange (ETDEWEB)

Beekman, Matt [Department of Physics, California Polytechnic State University, San Luis Obispo, California 93407 (United States); Wei, Kaya; Nolas, George S., E-mail: gnolas@usf.edu [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States)

2016-12-15

In its common, thermodynamically stable state, silicon adopts the same crystal structure as diamond. Although only a few alternative allotropic structures have been discovered and studied over the past six decades, advanced methods for structure prediction have recently suggested a remarkably rich low-density phase space that has only begun to be explored. The electronic properties of these low-density allotropes of silicon, predicted by first-principles calculations, indicate that these materials could offer a pathway to improving performance and reducing cost in a variety of electronic and energy-related applications. In this focus review, we provide an introduction and overview of recent theoretical and experimental results related to low-density allotropes of silicon, highlighting the significant potential these materials may have for technological applications, provided substantial challenges to their experimental preparation can be overcome.

Signals from fluorescent materials on the surface of silicon micro-strip sensors

CERN Document Server

Sperlich, Dennis; The ATLAS collaboration

2018-01-01

For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker (ITk). In order to minimise the amount of material in the ITk, circuit boards with readout electronics will be glued onto the active area of the sensor. Several adhesives, investigated to be used for the construction of detector modules, were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high-radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By positioning the beam parallel to the sensor surfave and pointing it both inside the sensor and above the sensor surface inside the deposited glue, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibilit...

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Study program to develop and evaluate die and container materials for the growth of silicon ribbons. [for development of low cost solar cells

Science.gov (United States)

Addington, L. A.; Ownby, P. D.; Yu, B. B.; Barsoum, M. W.; Romero, H. V.; Zealer, B. G.

1979-01-01

The development and evaluation of proprietary coatings of pure silicon carbide, silicon nitride, and aluminum nitride on less pure hot pressed substrates of the respective ceramic materials, is described. Silicon sessile drop experiments were performed on coated test specimens under controlled oxygen partial pressure. Prior to testing, X-ray diffraction and SEM characterization was performed. The reaction interfaces were characterized after testing with optical and scanning electron microscopy and Auger electron spectroscopy. Increasing the oxygen partial pressure was found to increase the molten silicon contact angle, apparently because adsorbed oxygen lowers the solid-vapor interfacial free energy. It was also found that adsorbed oxygen increased the degree of attack of molten silicon upon the chemical vapor deposited coatings. Cost projections show that reasonably priced, coated, molten silicon resistant refractory material shapes are obtainable.

Bacterial adhesion to conventional hydrogel and new silicone-hydrogel contact lens materials.

Science.gov (United States)

Kodjikian, Laurent; Casoli-Bergeron, Emmanuelle; Malet, Florence; Janin-Manificat, Hélène; Freney, Jean; Burillon, Carole; Colin, Joseph; Steghens, Jean-Paul

2008-02-01

As bacterial adhesion to contact lenses may contribute to the pathogenesis of keratitis, the aim of our study was to investigate in vitro adhesion of clinically relevant bacteria to conventional hydrogel (standard HEMA) and silicone-hydrogel contact lenses using a bioluminescent ATP assay. Four types of unworn contact lenses (Etafilcon A, Galyfilcon A, Balafilcon A, Lotrafilcon B) were incubated with Staphylococcus epidermidis (two different strains) and Pseudomonas aeruginosa suspended in phosphate buffered saline (PBS). Lenses were placed with the posterior surface facing up and were incubated in the bacterial suspension for 4 hours at 37 degrees C. Bacterial binding was then measured and studied by bioluminescent ATP assay. Six replicate experiments were performed for each lens and strain. Adhesion of all species of bacteria to standard HEMA contact lenses (Etafilcon A) was found to be significantly lower than that of three types of silicone-hydrogel contact lenses, whereas Lotrafilcon B material showed the highest level of bacterial binding. Differences between species in the overall level of adhesion to the different types of contact lenses were observed. Adhesion of P. aeruginosa was typically at least 20 times greater than that observed with both S. epidermidis strains. Conventional hydrogel contact lenses exhibit significantly lower bacterial adhesion in vitro than silicone-hydrogel ones. This could be due to the greater hydrophobicity but also to the higher oxygen transmissibility of silicone-hydrogel lenses.

Radiation Hardening of Silicon Detectors

CERN Multimedia

Leroy, C; Glaser, M

2002-01-01

%RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

Elastic silicone encapsulation of n-hexadecyl bromide by microfluidic approach as novel microencapsulated phase change materials

International Nuclear Information System (INIS)

Fu, Zhenjin; Su, Lin; Li, Jing; Yang, Ruizhuang; Zhang, Zhanwen; Liu, Meifang; Li, Jie; Li, Bo

2014-01-01

Highlights: • n-Hexadecyl bromide was encapsuled in elastic silicone shell. • The surfaces of microcapsules were smooth and the cross sections were compact. • Latent heat of microcapsules was 76.35 J g −1 . • The microencapsulation ratio was 49 wt.%. • The microcapsules had good thermal stability. - Abstract: The elastic silicone/n-hexadecyl bromide microcapsules were prepared as novel microencapsulated phase change materials by microfluidic approach with the co-flowing channels, where the double oil1-in-oil2-in-water (O1/O2/W) droplets with a core–shell geometry were fabricated. The thermal characterizations of the microcapsules were investigated using differential scanning calorimetry (DSC) and thermogravimetry analysis (TGA). The DSC results showed that the microcapsules had good energy storage capacity with melting and freezing enthalpies 76.35 J g −1 and 78.67 J g −1 , respectively. The TGA investigation showed that the microcapsules had good thermal stability. The surfaces of microcapsules were smooth and the cross sections were compact from the results of optical microscope and scanning electron microscopy (SEM). Optical microscope showed that the silicone shell can provide expansion place due to its elastic property. Therefore, the silicone/n-hexadecyl bromide microcapsules showed good potential as thermal regulating textile and thermal insulation materials

Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

Science.gov (United States)

1983-01-01

Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

Impurities in silicon and their impact on solar cell performance

NARCIS (Netherlands)

Coletti, Gianluca

2011-01-01

Photovoltaic conversion of solar energy is a rapidly growing technology. More than 80% of global solar cell production is currently based on silicon. The aim of this thesis is to understand the complex relation between impurity content of silicon starting material (“feedstock”) and the resulting

Study on the fabrication of silicon nanoparticles in an amorphous silicon light absorbing layer for solar cell applications

International Nuclear Information System (INIS)

Park, Joo Hyung; Song, Jin Soo; Lee, Jae Hee; Lee, Jeong Chul

2012-01-01

Hydrogenated amorphous-silicon (a-Si:H) thin-film solar cells have advantages of relatively simple technology, less material consumption, higher absorption ratio compared to crystalline silicon, and low cost due to the use of cheaper substrates rather than silicon wafers. However, together with those advantages, amorphous-silicon thin-film solar cells face several issues such as a relatively lower efficiency, a relatively wider bandgap, and the Staebler-Wronski effect (SWE) compared to other competing materials (i.e., crystalline silicon, CdTe, Cu(In x Ga (1-x) )Se 2 (CIGS), etc.). As a remedy for those drawbacks and a way to enhance the cell conversion efficiency at the same time, the employment of crystalline silicon nanoparticles (Si-NPs) in the a-Si matrix is proposed to organize the quantum-dot (QD) structure as the light-absorbing layer. This structure of the light absorbing layer consists of single-crystal Si-NPs in an a-Si:H thin-film matrix. The single-crystal Si-NPs are synthesized by using SiH 4 gas decomposition with CO 2 laser pyrolysis, and the sizes of Si-NPs are calibrated to control their bandgaps. The synthesized size-controlled Si-NPs are directly transferred to another chamber to form a QD structure by using co-deposition of the Si-NPs and the a-Si:H matrix. Transmission electron microscopy (TEM) analyses are employed to verify the sizes and the crystalline properties of the Si-NPs alone and of the Si-NPs in the a-Si:H matrix. The TEM results show successful co-deposition of size-controlled Si-NPs in the a-Si:H matrix, which is meaningful because it suggests the possibility of further enhancement of the a-Si:H solar-cell structure and of tandem structure applications by using a single element.

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Using silicon nanostructures for the improvement of silicon solar cells' efficiency

International Nuclear Information System (INIS)

Torre, J. de la; Bremond, G.; Lemiti, M.; Guillot, G.; Mur, P.; Buffet, N.

2006-01-01

Silicon nanostructures (ns-Si) show interesting optical and electrical properties as a result of the band gap widening caused by quantum confinement effects. Along with their potential utilization for silicon-based light emitters' fabrication, they could also represent an appealing option for the improvement of energy conversion efficiency in silicon-based solar cells whether by using their luminescence properties (photon down-conversion) or the excess photocurrent produced by an improved high-energy photon's absorption. In this work, we report on the morphological and optical studies of non-stoichiometric silica (SiO x ) and silicon nitride (SiN x ) layers containing silicon nanostructures (ns-Si) in view of their application for solar cell's efficiency improvement. The morphological studies of the samples performed by transmission electron microscopy (TEM) unambiguously show the presence of ns-Si in a crystalline form for high temperature-annealed SiO x layers and for low temperature deposition of SiN x layers. The photoluminescence emission (PL) shows a rather high efficiency in both kind of layers with an intensity of only a factor ∼ 100 lower than that of porous silicon (pi-Si). The photocurrent spectroscopy (PC) shows a significant increase of absorption at high photon energy excitation most probably related to photon absorption within ns-Si quantized states. Moreover, the absorption characteristics obtained from PC spectra show a good agreement with the PL emission states unambiguously demonstrating a same origin, related to Q-confined excitons within ns-Si. Finally, the major asset of this material is the possibility to incorporate it to solar cells manufacturing processing for an insignificant cost

Acetic and Acrylic Acid Molecular Imprinted Model Silicone Hydrogel Materials for Ciprofloxacin-HCl Delivery

Directory of Open Access Journals (Sweden)

Lyndon Jones

2012-01-01

Full Text Available Contact lenses, as an alternative drug delivery vehicle for the eye compared to eye drops, are desirable due to potential advantages in dosing regimen, bioavailability and patient tolerance/compliance. The challenge has been to engineer and develop these materials to sustain drug delivery to the eye for a long period of time. In this study, model silicone hydrogel materials were created using a molecular imprinting strategy to deliver the antibiotic ciprofloxacin. Acetic and acrylic acid were used as the functional monomers, to interact with the ciprofloxacin template to efficiently create recognition cavities within the final polymerized material. Synthesized materials were loaded with 9.06 mM, 0.10 mM and 0.025 mM solutions of ciprofloxacin, and the release of ciprofloxacin into an artificial tear solution was monitored over time. The materials were shown to release for periods varying from 3 to 14 days, dependent on the loading solution, functional monomer concentration and functional monomer:template ratio, with materials with greater monomer:template ratio (8:1 and 16:1 imprinted tending to release for longer periods of time. Materials with a lower monomer:template ratio (4:1 imprinted tended to release comparatively greater amounts of ciprofloxacin into solution, but the release was somewhat shorter. The total amount of drug released from the imprinted materials was sufficient to reach levels relevant to inhibit the growth of common ocular isolates of bacteria. This work is one of the first to demonstrate the feasibility of molecular imprinting in model silicone hydrogel-type materials.

3D characterisation of tool wear whilst diamond turning silicon

OpenAIRE

Durazo-Cardenas, Isidro Sergio; Shore, Paul; Luo, X.; Jacklin, T.; Impey, S. A.; Cox, A.

2006-01-01

Nanometrically smooth infrared silicon optics can be manufactured by the diamond turning process. Due to its relatively low density, silicon is an ideal optical material for weight sensitive infrared (IR) applications. However, rapid diamond tool edge degradation and the effect on the achieved surface have prevented significant exploitation. With the aim of developing a process model to optimise the diamond turning of silicon optics, a series of experimental trials were devi...

Modification of silicon nitride and silicon carbide surfaces for food and biosensor applications

NARCIS (Netherlands)

Rosso, M.

2009-01-01

Silicon-rich silicon nitride (SixN4, x > 3) is a robust insulating material widely used for the coating of microdevices: its high chemical and mechanical inertness make it a material of choice for the reinforcement of fragile microstructures (e.g. suspended microcantilevers, micro-fabricated

Advanced silicon materials for photovoltaic applications

CERN Document Server

Pizzini, Sergio

2012-01-01

Today, the silicon feedstock for photovoltaic cells comes from processes which were originally developed for the microelectronic industry. It covers almost 90% of the photovoltaic market, with mass production volume at least one order of magnitude larger than those devoted to microelectronics. However, it is hard to imagine that this kind of feedstock (extremely pure but heavily penalized by its high energy cost) could remain the only source of silicon for a photovoltaic market which is in continuous expansion, and which has a cumulative growth rate in excess of 30% in the last few years. Ev

Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes; Summary Discussion Sessions

International Nuclear Information System (INIS)

Sopori, B.; Swanson, D.; Sinton, R.; Stavola, M.; Tan, T.

1998-01-01

This report is a summary of the panel discussions included with the Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme of the workshop was ''Supporting the Transition to World Class Manufacturing.'' This workshop provided a forum for an informal exchange of information between researchers in the photovoltaic and nonphotovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helped establish a knowledge base that can be used for improving device-fabrication processes to enhance solar-cell performance and reduce cell costs. It also provided an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research

Broadband infrared photoluminescence in silicon nanowires with high density stacking faults.

Science.gov (United States)

Li, Yang; Liu, Zhihong; Lu, Xiaoxiang; Su, Zhihua; Wang, Yanan; Liu, Rui; Wang, Dunwei; Jian, Jie; Lee, Joon Hwan; Wang, Haiyan; Yu, Qingkai; Bao, Jiming

2015-02-07

Making silicon an efficient light-emitting material is an important goal of silicon photonics. Here we report the observation of broadband sub-bandgap photoluminescence in silicon nanowires with a high density of stacking faults. The photoluminescence becomes stronger and exhibits a blue shift under higher laser powers. The super-linear dependence on excitation intensity indicates a strong competition between radiative and defect-related non-radiative channels, and the spectral blue shift is ascribed to the band filling effect in the heterostructures of wurtzite silicon and cubic silicon created by stacking faults.

Resistivity measurements on the neutron irradiated detector grade silicon materials

Energy Technology Data Exchange (ETDEWEB)

Li, Zheng

1993-11-01

Resistivity measurements under the condition of no or low electrical field (electrical neutral bulk or ENB condition) have been made on various device configurations on detector grade silicon materials after neutron irradiation. Results of the measurements have shown that the ENB resistivity increases with neutron fluence ({Phi}{sub n}) at low {phi}{sub n} (<10{sup 13} n/cm{sup 2}) and saturates at a value between 300 and 400 k{Omega}-cm at {phi}{sub n} {approximately}10{sup 13} n/cm{sup 2}. Meanwhile, the effective doping concentration N{sub eff} in the space charge region (SCR) obtained from the C-V measurements of fully depleted p{sup +}/n silicon junction detectors has been found to increase nearly linearly with {phi}{sub n} at high fluences ({phi}{sub n} > 10{sup 13} n/cm{sup 2}). The experimental results are explained by the deep levels crossing the Fermi level in the SCR and near perfect compensation in the ENB by all deep levels, resulting in N{sub eff} (SCR) {ne} n or p (free carrier concentrations in the ENB).

Silicon carbide and its use as a radiation detector material

International Nuclear Information System (INIS)

Nava, F; Bertuccio, G; Cavallini, A; Vittone, E

2008-01-01

We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A review of the characterization methods and electrical contacting issues and how these are related to detector performance is presented. The most recent data on charge transport parameters across the Schottky barrier and how these are related to radiation spectrometer performance are presented. Experimental results on pixel detectors having equivalent noise energies of 144 eV FWHM (7.8 electrons rms) and 196 eV FWHM at +27 °C and +100 °C, respectively, are reported. Results of studying the radiation resistance of 4H–SiC are analysed. The data on the ionization energies, capture cross section, deep-level centre concentrations and their plausible structures formed in SiC as a result of irradiation with various particles are reviewed. The emphasis is placed on the study of the 1 MeV neutron irradiation, since these thermal particles seem to play the main role in the detector degradation. An accurate electrical characterization of the induced deep-level centres by means of PICTS technique has allowed one to identify which play the main role in the detector degradation. (topical review)

A prospective study on silicone breast implants and the silicone-related symptom complex.

Science.gov (United States)

Contant, C M E; Swaak, A J G; Obdeijn, A I M; van der Holt, B; Tjong Joe Wai, R; van Geel, A N; Eggermont, A M M

2002-06-01

This cohort study prospectively evaluated the prevalence of the silicone-related symptom complex (SRSC) in relation to antinuclear antibodies (ANA) and magnetic resonance imaging (MRI) of silicone breast implants (SBI) 1 year after implantation. A total of 57 women undergoing mastectomy followed by immediate breast reconstruction (IBR) and SBI between March 1995 and March 1997 at the University Hospital Rotterdam/Daniel den Hoed Cancer Centre, were prospectively evaluated. Just before and 1 year after IBR the sera of these women were tested for the presence of ANA and they were screened for the prevalence of SRSC-related symptoms by questionnaire. All prostheses were evaluated by MRI 1 month and 1 year after IBR. Just before operation 11% of the women had a Sjögren score of more than 2, whereas 30% had such a score 1 year after IBR ( P = 0.01). One year postoperatively women had significantly more RA/Raynaud-related complaints: 21% preoperatively versus 40% 1 year after IBR ( P = 0.03). Within the undefined complaints-related group 19% had a score of 2 or more preoperatively and 33% 1 year after IBR ( P = 0.09). There were no new cases of ANA positivity 1 year after IBR. The linguine sign was seen by MRI in three implants: one 1 month after IBR and two 1 year after IBR. There was no relation to changes in SRSC expression and these MRI findings. In conclusion, 1 year after SBI implantation women had more SRSC-related complaints, especially Sjögren's and RA/Raynaud's. Moreover there was no correlation between elevated SRSC expression and changes in the presence of ANA or changes in MRI of the SBI 1 year after IBR.

Strong quantum-confined stark effect in germanium quantum-well structures on silicon

International Nuclear Information System (INIS)

Kuo, Y.; Lee, Y. K.; Gei, Y.; Ren, S; Roth, J. E.; Miller, D. A.; Harris, J. S.

2006-01-01

Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such component with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimeters) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger Quantum-Confined Stark Effect (QCSE) mechanism, which allows modulator structures with only micrometers of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor, such semiconductors often display much weak optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture. (author)

Hydrogenation of gold-related levels in silicon by electrolytic doping

International Nuclear Information System (INIS)

Pearton, S.J.; Hansen, W.L.; Haller, E.E.; Kahn, J.M.

1984-01-01

The deep gold-related donor and acceptor levels in silicon have been neutralized to several μm depth by introducing atomic hydrogen using an electrolytic method. Using phosphoric or sulfuric acid as the electrolyte, it is possible to dope the crystalline silicon with hydrogen at elevated temperatures (200--280 0 C) allowing direct comparison with other means of introduction, such as hydrogen plasma exposure. We find the electrolytic method is not as efficient as plasma treatment for the same conditions, possibly due to oxide formation during the immersion in the acid

Rolling-element fatigue life of silicon nitride balls. [as compared to that of steel, ceramic, and cermet materials

Science.gov (United States)

Parker, R. J.; Zaretsky, E. V.

1974-01-01

The five-ball fatigue tester was used to evaluate silicon nitride as a rolling-element bearing material. Results indicate that hot-pressed silicon nitride running against steel may be expected to yield fatigue lives comparable to or greater than those of bearing quality steel running against steel at stress levels typical rolling-element bearing application. The fatigue life of hot-pressed silicon nitride is considerably greater than that of any ceramic or cermet tested. Computer analysis indicates that there is no improvement in the lives of 120-mm-bore angular--contact ball bearings of the same geometry operating at DN values from 2 to 4 million where hot-pressed silicon nitride balls are used in place of steel balls.

Elastic silicone encapsulation of n-hexadecyl bromide by microfluidic approach as novel microencapsulated phase change materials

Energy Technology Data Exchange (ETDEWEB)

Fu, Zhenjin [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010 (China); Su, Lin; Li, Jing; Yang, Ruizhuang; Zhang, Zhanwen; Liu, Meifang; Li, Jie [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Li, Bo, E-mail: LB6711@126.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China)

2014-08-20

Highlights: • n-Hexadecyl bromide was encapsuled in elastic silicone shell. • The surfaces of microcapsules were smooth and the cross sections were compact. • Latent heat of microcapsules was 76.35 J g{sup −1}. • The microencapsulation ratio was 49 wt.%. • The microcapsules had good thermal stability. - Abstract: The elastic silicone/n-hexadecyl bromide microcapsules were prepared as novel microencapsulated phase change materials by microfluidic approach with the co-flowing channels, where the double oil1-in-oil2-in-water (O1/O2/W) droplets with a core–shell geometry were fabricated. The thermal characterizations of the microcapsules were investigated using differential scanning calorimetry (DSC) and thermogravimetry analysis (TGA). The DSC results showed that the microcapsules had good energy storage capacity with melting and freezing enthalpies 76.35 J g{sup −1} and 78.67 J g{sup −1}, respectively. The TGA investigation showed that the microcapsules had good thermal stability. The surfaces of microcapsules were smooth and the cross sections were compact from the results of optical microscope and scanning electron microscopy (SEM). Optical microscope showed that the silicone shell can provide expansion place due to its elastic property. Therefore, the silicone/n-hexadecyl bromide microcapsules showed good potential as thermal regulating textile and thermal insulation materials.

Emission Mechanisms of Si Nanocrystals and Defects in SiO2 Materials

Directory of Open Access Journals (Sweden)

José Antonio Rodríguez

2014-01-01

Full Text Available Motivated by the necessity to have all silicon optoelectronic circuits, researchers around the world are working with light emitting silicon materials. Such materials are silicon dielectric compounds with silicon content altered, such as silicon oxide or nitride, enriched in different ways with Silicon. Silicon Rich Oxide or silicon dioxide enriched with silicon, and silicon rich nitride are without a doubt the most promising materials to reach this goal. Even though they are subjected to countless studies, the light emission phenomenon has not been completely clarified. So, a review of different proposals presented to understand the light emission phenomenon including emissions related to nanocrystals and to point defects in SiO2 is presented.

Electrical characterization of copper related defect reactions in silicon

Energy Technology Data Exchange (ETDEWEB)

Heiser, T. [Centre National de la Recherche Scientifique, 67 - Strasbourg (France). Lab. PHASE; Istratov, A.A.; Flink, C.; Weber, E.R. [Department of Material Science and Mineral Engineering, University of California at Berkeley, 577 Evans Hall, Berkeley, CA 94720 (United States)

1999-02-12

Defect reactions involving interstitial copper impurities (Cu{sub i}) in silicon are reviewed. The influence of the Coulomb interaction between positively charged copper and negatively charged defects, such as acceptor states of transition metals and lattice defects, on the complex formation rate is discussed in detail. The diffusivity of interstitial copper and the dissociation kinetics of copper-acceptor pairs are studied using the recently introduced transient ion drift (TID) method. TID results reveal that most interstitial copper impurities remain dissolved immediately after the quench and form pairs with shallow acceptors. It is shown that in moderately and heavily doped silicon the diffusivity of copper is trap limited, while in low B-doped silicon the interstitial copper-acceptor pairing is weak enough to allow the assessment of the copper intrinsic diffusion coefficient. The intrinsic diffusion barrier is estimated to be 0.18{+-}0.01 eV. It is concluded that the Coulomb potential used in previous publications underestimated considerably the acceptor-copper interaction. In light of these results, a general discussion on Cu related defect reactions is given. (orig.) 44 refs.

Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications

International Nuclear Information System (INIS)

Wellman, P; Syväjärvi, M; Ou, H

2014-01-01

silicon oxycarbide material can provide potential applications of the Eu luminescent materials to challenging conditions like high temperatures or aggressive environments where the silica has weaknesses. In some approaches, silicon rich silicon oxide that contain silicon nanoclusters emit red to near infrared luminescence due to quantum confinement effects while luminescence at shorter wavelength is difficult due to the interplay of defects and quantum confinement effects. In addition it is applicable as low-k dielectric, etch-stop and passivation layers. It also has an optical band-gap that is smaller than that of SiO2 which may facilitate carrier injection at lower voltages that is suitable for optoelectronics. From materials perspective of emerging materials, it seems distant to consider system related issues. The future demands on communication and lighting devices require higher information flows in modernized optical devices, for example by replacing electrical interconnects with their optical counterparts and tunable backgrounds filters for integrated optics or photonics applications. However, there are materials issues related to such device performance, for example by a non-linearity, that provide the possibility for selective removal or addition of wavelengths using hetero structures in which one side of the structure enhances the light-to-dark sensitivity of long and medium wavelength channels and diminish others, and an opposite behavior in other face of the structure. Certainly materials may be applied in various innovative ways to provide new performances in devices and systems. In any materials and device evaluation, reliability issues in passivation and packaging of semiconductor device structures provide a base knowledge that may be used to evaluate new concepts. Fundamental aspects of dielectric constant, bandgap and band offsets between the valence and conduction band edges between the passivation layer and the semiconductor create a foundation for

Research and Application Progress of Silicone Rubber Materials in Aviation

Directory of Open Access Journals (Sweden)

HUANG Yanhua

2016-06-01

Full Text Available The research progress of heat resistance, cold resistance, electrical conductivity and damping properties of aviation silicone rubber were reviewed in this article. The heat resistance properties of silicone rubber can be enhanced by changing the molecular structure (main chain, end-group, side chain and molecular weight of the gum and adding special heat-resistance filler. The cold resistance of aviation silicone rubber can be enhanced by adjusting the side chain molecular structure of the gum and the content of different gum chain. The electrical conductivity of silicone rubber can be improved by optimizing, blending and dispersing of conductive particles. The damping property of silicone rubber can be improved by designing and synthesizing of high-molecular polysiloxane damping agent. Furthermore, the application of aviation silicone rubber used in high-low temperature seal, electrical conduction and vibration damping technology are also summarized, and the high performance (for example long-term high temperature resistance, ultralow temperature resistance, high electromagnetic shelding, long-term fatigue resistance vibration damping, quasi constant modulus and so on of special silicone rubber is the future direction of aviation silicone rubber.

Nanostructured 2D cellular materials in silicon by sidewall transfer lithography NEMS

Science.gov (United States)

Syms, Richard R. A.; Liu, Dixi; Ahmad, Munir M.

2017-07-01

Sidewall transfer lithography (STL) is demonstrated as a method for parallel fabrication of 2D nanostructured cellular solids in single-crystal silicon. The linear mechanical properties of four lattices (perfect and defected diamond; singly and doubly periodic honeycomb) with low effective Young’s moduli and effective Poisson’s ratio ranging from positive to negative are modelled using analytic theory and the matrix stiffness method with an emphasis on boundary effects. The lattices are fabricated with a minimum feature size of 100 nm and an aspect ratio of 40:1 using single- and double-level STL and deep reactive ion etching of bonded silicon-on-insulator. Nanoelectromechanical systems (NEMS) containing cellular materials are used to demonstrate stretching, bending and brittle fracture. Predicted edge effects are observed, theoretical values of Poisson’s ratio are verified and failure patterns are described.

Bulk solar grade silicon: how chemistry and physics play to get a benevolent microstructured material

Energy Technology Data Exchange (ETDEWEB)

Pizzini, S. [University of Milano-Bicocca, Department of Materials Science, Milan (Italy); Nedsilicon SpA, Osimo, Ancona (Italy)

2009-07-15

The availability of low-cost alternatives to electronic grade silicon has been and still is the condition for the extensive use of photovoltaics as an efficient sun harvesting system. The first step towards this objective was positively carried out in the 1980s and resulted in the reduction in cost and energy of the growth process using as feedstock electronic grade scraps and a variety of solidification procedures, all of which deliver a multi-crystalline material of high photovoltaic quality. The second step was an intense R and D activity aiming at defining and developing at lab scale a new variety of silicon, called ''solar grade'' silicon, which should fulfil the requirement of both cost effectiveness and high conversion efficiency. The third step involved and still involves the development of cost-effective technologies for the manufacture of solar grade silicon, in alternative to the classical Siemens route, which relays, as is well-known, to the pyrolitic decomposition of high-purity trichlorosilane and which is, also in its more advanced versions, extremely energy intensive. Aim of this paper is to give the author's viewpoint about some open questions concerning bulk solar silicon for PV applications and about challenges and chances of novel feedstocks of direct metallurgical origin. (orig.)

Fiscal 1992 R and D project for next generation infrastructure technology. Report on results of R and D on silicon-based polymeric material; 1992 nendo keisokei kobunshi zairyo no kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1993-03-01

R and D was conducted with the purpose of establishing fundamental technologies for molecular design, synthesis, material formation and evaluation method concerning silicon-based polymer. with the fiscal 1992 results summarized. In the studies on synthesis technology of electrically conductive silicon-based polymeric materials, silicon-based compounds were synthesized including in particular -Si-Si- bond and carbon multiple bond like -C-C-, with acquisition/analysis of material data started. In the studies on new silicon-based polymeric materials capable of circuit plotting, syntheses were performed for network polysilanes through the disproportionation reaction of alkoxydisilanes. In the studies on new silicon-based polymeric materials having a light emitting function, evaluation of oxidation-reduction potential and search for synthesizing conditions were performed for halosilanes and hydrosilanes. In the studies on silicon-based photoelectric conversion materials, molecular design progressed using a crystal orbital method. Furthermore, researches were implemented on such subjects as silicon-based polymeric materials having a sea-island structure, interpenetrating polymer network forming technologies, and composite structural materials composed of organic metallic complex and silicon-based polymers. (NEDO)

Flexible energetic materials and related methods

Energy Technology Data Exchange (ETDEWEB)

Heaps, Ronald J.

2018-03-06

Energetic compositions and methods of forming components from the compositions are provided. In one embodiment, a composition includes aluminum, molybdenum trioxide, potassium perchlorate, and a binder. In one embodiment, the binder may include a silicone material. The materials may be mixed with a solvent, such as xylene, de-aired, shaped and cured to provide a self-supporting structure. In one embodiment, one or more reinforcement members may be added to provide additional strength to the structure. For example, a weave or mat of carbon fiber material may be added to the mixture prior to curing. In one embodiment, blade casting techniques may be used to form a structure. In another embodiment, a structure may be formed using 3-dimensional printing techniques.

Effect of Projectile Materials on Foreign Object Damage of a Gas-Turbine Grade Silicon Nitride

Science.gov (United States)

Choi, Sung R.; Racz, Zsolt; Bhatt, Ramakrishna T.; Brewer, David N.; Gyekenyesi, John P.

2005-01-01

Foreign object damage (FOD) behavior of AS800 silicon nitride was determined using four different projectile materials at ambient temperature. The target test specimens rigidly supported were impacted at their centers by spherical projectiles with a diameter of 1.59 mm. Four different types of projectiles were used including hardened steel balls, annealed steel balls, silicon nitride balls, and brass balls. Post-impact strength of each target specimen impacted was determined as a function of impact velocity to better understand the severity of local impact damage. The critical impact velocity where target specimens fail upon impact was highest with brass balls, lowest with ceramic ball, and intermediate with annealed and hardened steel balls. Degree of strength degradation upon impact followed the same order as in the critical impact velocity with respect to projectile materials. For steel balls, hardened projectiles yielded more significant impact damage than annealed counterparts. The most important material parameter affecting FOD was identified as hardness of projectiles and was correlated in terms of critical impact velocity, impact deformation, and impact load.

Undepleted silicon detectors

International Nuclear Information System (INIS)

Rancoita, P.G.; Seidman, A.

1985-01-01

Large-size silicon detectors employing relatively low resistivity material can be used in electromagnetic calorimetry. They can operate in strong magnetic fields, under geometric constraints and with microstrip detectors a high resolution can be achieved. Low noise large capacitance oriented electronics was developed to enable good signal-to-noise ratio for single relativistic particles traversing large area detectors. In undepleted silicon detectors, the charge migration from the field-free region has been investigated by comparing the expected peak position (from the depleted layer only) of the energy-loss of relativistic electrons with the measured one. Furthermore, the undepleted detectors have been employed in a prototype of Si/W electromagnetic colorimeter. The sensitive layer was found to be systematically larger than the depleted one

太阳能硅料化学清洗研究进展%Development of chemical cleaning for solar energy silicon material

Institute of Scientific and Technical Information of China (English)

申燕; 贾艳飞; 姚旭; 张健; 廉佳林

2016-01-01

Silicon as the main material of solar photovoltaic power generation in the solar photovoltaic industry, the demand for silicon material cleanliness also gradualy increases under the background of the rapid development of the market. Chemical cleaning is the main method of silicon material cleaning. In this paper, the research progress of the standard cleaning method ( RCA ) and depending on the silicon material by RCA method to develop other chemical cleaning method was reviewed.%多晶硅作为太阳能光伏发电的主要材料，在太阳能光伏产业市场迅速发展的大背景下，对硅料清洁度的需求也逐步增加。化学清洗是目前硅料清洗的主要方法。本文综述了近年来硅料化学清洗的基本方法（RCA）及根据硅料的不同由RCA法发展出的其他化学清洗方法。

Development in fiscal 1998 of silicon manufacturing process to rationalize energy usage. Surveys and researches on analysis of practical application of technology to manufacture silicon raw materials for solar cells; 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

With an objective to develop a mass production technology to manufacture silicon raw materials for solar cells, and assist its practical application, surveys and analyses were performed on trends in development of the related technologies, the problems therein , market trends and industrial trends thereof. This paper summarizes the achievements in fiscal 1998. The worldwide production amount of solar cells in 1998 is estimated to have achieved 150 MW, and the silicon consumption reached the level of 2,300 tons. In spite of the economic recession environment, there was no change in the expansion trend. In developing an SOG-Si mass production and manufacturing technology, construction of pilot plants for each process has been completed, and entered into the operation research phase. In developing a technology to manufacture high quality poly-crystalline silicon substrates, fabrication has been completed on the on-line ingot cutting equipment and the plasma heating equipment, and the stage is now in operation research of continuous electromagnetic casting process. The conversion efficiency of the poly-crystalline silicon solar cells is 14 to 16% at the mass production level, whose enhancement requires indispensably the improvement in quality of the substrate. Discussions are required on the ingot manufacturing conditions in coordination with improvement in the cell manufacturing technology. (NEDO)

Next generation structural silicone glazing

Directory of Open Access Journals (Sweden)

Charles D. Clift

2015-06-01

Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

Silicon (100)/SiO2 by XPS

Energy Technology Data Exchange (ETDEWEB)

Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

2013-09-25

Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

Emerging heterogeneous integrated photonic platforms on silicon

Directory of Open Access Journals (Sweden)

Fathpour Sasan

2015-05-01

Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

EDITORIAL: Special issue on silicon photonics

Science.gov (United States)

Reed, Graham; Paniccia, Mario; Wada, Kazumi; Mashanovich, Goran

2008-06-01

The technology now known as silicon photonics can be traced back to the pioneering work of Soref in the mid-1980s (see, for example, Soref R A and Lorenzo J P 1985 Electron. Lett. 21 953). However, the nature of the research conducted today, whilst it builds upon that early work, is unrecognizable in terms of technology metrics such as device efficiency, device data rate and device dimensions, and even in targeted applications areas. Today silicon photonics is still evolving, and is enjoying a period of unprecedented attention in terms of research focus. This has resulted in orders-of-magnitude improvement in device performance over the last few years to levels many thought were impossible. However, despite the existence of the research field for more than two decades, silicon is still regarded as a 'new' optical material, one that is being manipulated and modified to satisfy the requirements of a range of applications. This is somewhat ironic since silicon is one of the best known and most thoroughly studied materials, thanks to the electronics industry that has made silicon its material of choice. The principal reasons for the lack of study of this 'late developer' are that (i) silicon is an indirect bandgap material and (ii) it does not exhibit a linear electro-optic (Pockels) effect. The former condition means that it is difficult to make a laser in silicon based on the intrinsic performance of the material, and consequently, in recent years, researchers have attempted to modify the material to artificially engineer the conditions for lasing to be viable (see, for example, the review text, Jalali B et al 2008 Silicon Lasers in Silicon Photonics: The State of the Art ed G T Reed (New York: Wiley)). The latter condition means that optical modulators are intrinsically less efficient in silicon than in some other materials, particularly when targeting the popular telecommunications wavelengths around 1.55 μm. Therefore researchers have sought alternative

Silicon spintronics with ferromagnetic tunnel devices

International Nuclear Information System (INIS)

Jansen, R; Sharma, S; Dash, S P; Min, B C

2012-01-01

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

Fine pitch and low material readout bus in the Silicon Pixel Vertex Tracker for the PHENIX Vertex Tracker upgrade

International Nuclear Information System (INIS)

Fujiwara, Kohei

2010-01-01

The construction of the Silicon Pixel Detector is starting in spring 2009 as project of the RHIC-PHENIX Silicon Vertex Tracker (VTX) upgrade at the Brookhaven National Laboratory. For the construction, we have developed a fine pitch and low material readout bus as the backbone parts of the VTX. In this article, we report the development and production of the readout bus.

Porous silicon technology for integrated microsystems

Science.gov (United States)

Wallner, Jin Zheng

With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

Trace elements determination in silicon and ferrosilicon reference materials by instrumental neutron activation analysis method

International Nuclear Information System (INIS)

Moreira, Edson Goncalves; Vasconcellos, Marina Beatriz Agostini; Saiki, Mitiko; Iamashita, Celia Omine

2002-01-01

The use of certified reference materials, CRM, is of uppermost importance in the rastreability realization of the measurement process. At times, CRM use is restricted by the non existence of a suitable CRM with similarity to the sample in respect to matrix composition or with element levels in different orders of magnitude. IPT Chemical Division launched a project to prepare a metallic silicon CRM, due to the requirements of the industries in this field. To characterize this new CRM, IPEN Nuclear Reactor Center is able to perform instrumental neutron activation analysis, INAA, a very suitable method for silicon matrix samples because they produce basically the short lived radionuclide 3 1 Si under thermal neutrons flux, which after radioactive decay, does not interfere in the determination of other elements. In this paper, it is presented the determination of As, Br, Co, Cr, K, Eu, Fe, La, Mn, Na Nb, Sb, Sm, Sc, Th, Tb, U, V, W and Yb in silicon CRM NBS SRM 57; ferrosilicon CRM IPT 56; IPT 70; NBS SRM 58a; NBS SRM 59a and silicon RM under preparation IPT 132. From the results, the accuracy and the precision of the process were assessed. (author)

High temperature mechanical performance of a hot isostatically pressed silicon nitride

Energy Technology Data Exchange (ETDEWEB)

Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

1996-01-01

Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

Combined Ultrasonic Elliptical Vibration and Chemical Mechanical Polishing of Monocrystalline Silicon

Directory of Open Access Journals (Sweden)

Liu Defu

2016-01-01

Full Text Available An ultrasonic elliptical vibration assisted chemical mechanical polishing(UEV-CMP is employed to achieve high material removal rate and high surface quality in the finishing of hard and brittle materials such as monocrystalline silicon, which combines the functions of conventional CMP and ultrasonic machining. In theultrasonic elliptical vibration aided chemical mechanical polishingexperimental setup developed by ourselves, the workpiece attached at the end of horn can vibrate simultaneously in both horizontal and vertical directions. Polishing experiments are carried out involving monocrystalline silicon to confirm the performance of the proposed UEV-CMP. The experimental results reveal that the ultrasonic elliptical vibration can increase significantly the material removal rate and reduce dramatically the surface roughness of monocrystalline silicon. It is found that the removal rate of monocrystalline silicon polished by UEV-CMP is increased by approximately 110% relative to that of conventional CMP because a passive layer on the monocrystalline silicon surface, formed by the chemical action of the polishing slurry, will be removed not only by the mechanical action of CMP but also by ultrasonic vibration action. It indicates that the high efficiency and high quality CMP of monocrystalline silicon can be performed with the proposed UEV-CMP technique.

Radiation accelerated formation of oxygen and carbon related complexes in silicon

International Nuclear Information System (INIS)

Lazrak, A.; Magnea, N.; Pautrat, J.L.

1984-06-01

During the pulling of silicon monocrystals by the Czochralsky method, oxygen is incorporated into the lattice. It is known from early works that low temperature annealings (400-1000 0 C) make this oxygen to precipitate and a number of different defects to be generated. In order to check whether the fast diffusivity of an oxygen silicon interstitial complex has to be taken in consideration it was interesting to examinate the possible role of radiation damage on the formation of oxygen related defects. Experimental results of an experiment are presented and discussed

Photonic integration and photonics-electronics convergence on silicon platform

CERN Document Server

Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

2015-01-01

Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

Optical switching at 1.55um in silicon racetrack resonators using phase change materials

NARCIS (Netherlands)

Rudé, M.; Pello, J.; Simpson, R.E.; Osmond, J.; Roelkens, G.C.; Tol, van der J.J.G.M.; Pruneri, V.

2013-01-01

An optical switch operating at a wavelength of 1.55¿µm and showing a 12 dB modulation depth is introduced. The device is implemented in a silicon racetrack resonator using an overcladding layer of the phase change data storage material Ge2Sb2Te5, which exhibits high contrast in its optical

Charge transfer processes in hybrid solar cells composed of amorphous silicon and organic materials

Energy Technology Data Exchange (ETDEWEB)

Schaefer, Sebastian; Neher, Dieter [Universitaet Potsdam, Inst. Physik u. Astronomie, Karl-Liebknecht-Strasse 24/25, 14467 Potsdam-Golm (Germany); Schulze, Tim; Korte, Lars [Helmholtz Zentrum Berlin, Inst. fuer Silizium Photovoltaik, Kekulestrasse 5, 12489 Berlin (Germany)

2011-07-01

The efficiency of hybrid solar cells composed of organic materials and amorphous hydrogenated silicon (a-Si:H) strongly depends upon the efficiency of charge transfer processes at the inorganic-organic interface. We investigated the performance of devices comprising an ITO/a-Si:H(n-type)/a-Si:H(intrinsic)/organic/metal multilayer structure and using two different organic components: zinc phthalocyanine (ZnPc) and poly(3-hexylthiophene) (P3HT). The results show higher power conversion- and quantum efficiencies for the P3HT based cells, compared to ZnPc. This can be explained by larger energy-level offset at the interface between the organic layer and a-Si:H, which facilitates hole transfer from occupied states in the valence band tail to the HOMO of the organic material and additionally promotes exciton splitting. The performance of the a-Si:H/P3HT cells can be further improved by treatment of the amorphous silicon surface with hydrofluoric acid (HF) and p-type doping of P3HT with F4TCNQ. The improved cells reached maximum power conversion efficiencies of 1%.

Toward 3D Printing of Medical Implants: Reduced Lateral Droplet Spreading of Silicone Rubber under Intense IR Curing.

Science.gov (United States)

Stieghorst, Jan; Majaura, Daniel; Wevering, Hendrik; Doll, Theodor

2016-03-01

The direct fabrication of silicone-rubber-based individually shaped active neural implants requires high-speed-curing systems in order to prevent extensive spreading of the viscous silicone rubber materials during vulcanization. Therefore, an infrared-laser-based test setup was developed to cure the silicone rubber materials rapidly and to evaluate the resulting spreading in relation to its initial viscosity, the absorbed infrared radiation, and the surface tensions of the fabrication bed's material. Different low-adhesion materials (polyimide, Parylene-C, polytetrafluoroethylene, and fluorinated ethylenepropylene) were used as bed materials to reduce the spreading of the silicone rubber materials by means of their well-known weak surface tensions. Further, O2-plasma treatment was performed on the bed materials to reduce the surface tensions. To calculate the absorbed radiation, the emittance of the laser was measured, and the absorptances of the materials were investigated with Fourier transform infrared spectroscopy in attenuated total reflection mode. A minimum silicone rubber spreading of 3.24% was achieved after 2 s curing time, indicating the potential usability of the presented high-speed-curing process for the direct fabrication of thermal-curing silicone rubbers.

Process Research On Polycrystalline Silicon Material (PROPSM). [flat plate solar array project

Science.gov (United States)

Culik, J. S.

1983-01-01

The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

Radiation damage in silicon. Defect analysis and detector properties

Energy Technology Data Exchange (ETDEWEB)

Hoenniger, F.

2008-01-15

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after {gamma}-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO{sub i}, C{sub i}O{sub i}, C{sub i}C{sub s}, VP or V{sub 2} several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO{sub 2} defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep

Radiation damage in silicon. Defect analysis and detector properties

International Nuclear Information System (INIS)

Hoenniger, F.

2008-01-01

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after γ-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO i , C i O i , C i C s , VP or V 2 several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO 2 defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep acceptor, a model has been introduced to

High-density oxidized porous silicon

International Nuclear Information System (INIS)

Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

2012-01-01

We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

Silicon photonic integration in telecommunications

Directory of Open Access Journals (Sweden)

Christopher Richard Doerr

2015-08-01

Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

Scattering characteristics from porous silicon

Directory of Open Access Journals (Sweden)

R. Sabet-Dariani

2000-12-01

Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

Fiscal 2000 achievement report. Development of energy use rationalization-oriented silicon manufacturing process (Survey and study of analysis of commercialization of solar-grade silicon material manufacturing technology); 2000 nendo shin energy sangyo gijutsu sogo kaihatsu kiko kyodo kenkyu gyomu seika hokokusho. Energy shiyo gorika silicon seizo process kaihatsu (Taiyodenchiyou silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu)

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

The trend of technology development, problems harbored therein, trend of the market, and the like were investigated for supporting the development of technologies for the mass production and commercialization of solar-grade silicon materials. Concerning the future of production enhancement and cost reduction in the manufacture of polycrystalline silicon solar cells, studies were made from the technological viewpoint. The results are shown below. It is estimated that approximately 4,500 tons of material silicon will be necessary in 2005 and 6,500-10,700 tons in 2010. Since the melting purification method of NEDO (New Energy and Industrial Technology Development Organization) now under development step by step toward commercialization as well as the conventional source will provide the necessary amount of material silicon, it is inferred that the development of solar cells will go on without any restraint originating in the semiconductor industry. With the commercialization of the technologies so far developed and the development/commercialization of the fast-acting high-performance solar cell technology, probabilities are high that the polycrystalline silicon solar cell manufacturing cost in 2010 will be as low as to be on the 100 yen/W (93-118 yen/W) level which is the level now held up as the goal. (NEDO)

On the Stiction of MEMS Materials

DEFF Research Database (Denmark)

Zhuang, Yanxin; Menon, Aric Kumaran

2005-01-01

energies and stiction of commonly used MEMS materials by contact angle measurements and atomic force microscopy (AFM). Dispersive and polar components of surface energies are calculated by Owens-Wendt-Rabel-Kaelble method. Silicon and silicon-related materials have higher polar surface energies than SU-8...... been shown that the materials with higher surface energy have higher sticton/adhesion forces. The topography of surface influences the contact angle and stiction, and is also discussed in the paper....

Contactless Spectral-dependent Charge Carrier Lifetime Measurements in Silicon Photovoltaic Materials

Science.gov (United States)

Roller, John; Hamadani, Behrang; Dagenais, Mario

Charge carrier lifetime measurements in bulk or unfinished photovoltaic (PV) materials allow for a more accurate estimate of power conversion efficiency in completed solar cells. In this work, carrier lifetimes in PV-grade silicon wafers are obtained by way of quasi-steady state photoconductance measurements. These measurements use a contactless RF system coupled with varying narrow spectrum input LEDs, ranging in wavelength from 460 nm to 1030 nm. Spectral dependent lifetime measurements allow for determination of bulk and surface properties of the material, including the intrinsic bulk lifetime and the surface recombination velocity. The effective lifetimes are fit to an analytical physics-based model to determine the desired parameters. Passivated and non-passivated samples are both studied and are shown to have good agreement with the theoretical model.

Design and evaluation of carbon nanofiber and silicon materials for neural implant applications

Science.gov (United States)

McKenzie, Janice L.

Reduction of glial scar tissue around central nervous system implants is necessary for improved efficacy in chronic applications. Design of materials that possess tunable properties inspired by native biological tissue and elucidation of pertinent cellular interactions with these materials was the motivation for this study. Since nanoscale carbon fibers possess the fundamental dimensional similarities to biological tissue and have attractive material properties needed for neural biomaterial implants, this present study explored cytocompatibility of these materials as well as modifications to traditionally used silicon. On silicon materials, results indicated that nanoscale surface features reduced astrocyte functions, and could be used to guide neurite extension from PC12 cells. Similarly, it was determined that astrocyte functions (key cells in glial scar tissue formation) were reduced on smaller diameter carbon fibers (125 nm or less) while PC12 neurite extension was enhanced on smaller diameter carbon fibers (100 nm or less). Further studies implicated laminin adsorption as a key mechanism in enhancing astrocyte adhesion to larger diameter fibers and at the same time encouraging neurite extension on smaller diameter fibers. Polycarbonate urethane (PCU) was then used as a matrix material for the smaller diameter carbon fibers (100 and 60 nm). These composites proved very versatile since electrical and mechanical properties as well as cell functions and directionality could be influenced by changing bulk and surface composition and features of these matrices. When these composites were modified to be smooth at the micronscale and only rough at the nanoscale, P19 cells actually submerged philopodia, extensions, or whole cells bodies beneath the PCU in order to interact with the carbon nanofibers. These carbon nanofiber composites that have been formulated are a promising material to coat neural probes and thereby enhance functionality at the tissue interface. This

Determinations of silicon and phosphorus in Pepperbush standard reference material by neutron activation and x-ray fluorescence methods

International Nuclear Information System (INIS)

Mizumoto, Yoshihiko; Nishio, Hirofumi; Hayashi, Takeshi; Kusakabe, Toshio; Iwata, Shiro.

1987-01-01

Silicon and phosphorus contents in Pepperbush standard reference material were determined by neutron activation and X-ray fluorescence methods. In neutron activation analysis, β-ray spectra of 32 P produced by 31 P(n,γ) 32 P reaction on Pepperbush and standard samples were measured by a low background β-ray spectrometer. In X-ray fluorescence analysis, the standard samples were prepared by mixing the Pepperbush powder with silicon dioxide and diammonium hydrogenphosphate. Characteristic X-rays from the samples were analyzed by a wavelength dispersive X-ray fluorescence spectrometer. From the β and X-ray intensities, silicon and phosphorus contents in Pepperbush were determined to be 1840 ± 80 and 1200 ± 50 μg g -1 , respectively. (author)

Electrochemical characteristics of bundle-type silicon nanorods as an anode material for lithium ion batteries

International Nuclear Information System (INIS)

Nguyen, Si Hieu; Lim, Jong Choo; Lee, Joong Kee

2012-01-01

Highlights: ► A metal-assisted chemical etching technique was performed on Si thin films. ► The etching process resulted in the formation of bundle-type Si nanorods. ► The morphology of Si electrodes closely relate to electrochemical characteristics. - Abstract: In order to prepare bundle-type silicon nanorods, a silver-assisted chemical etching technique was used to modify a 1.6 μm silicon thin film, which was deposited on Cu foil by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition. The bundle-type silicon nanorods on Cu foil were employed as anodes for a lithium secondary battery, without further treatment. The electrochemical characteristics of the pristine silicon thin film anodes and the bundle-type silicon nanorod anodes are different from one another. The electrochemical performance of the bundle-type silicon nanorod anodes exceeded that of the pristine Si thin film anodes. The specific capacity of the bundle-type silicon nanorod anodes is much higher than 3000 mAh g −1 at the first charge (Li insertion) cycle. The coulombic efficiency of bundle-type silicon anodes was stable at more than 97%, and the charge capacity remained at 1420 mAh g −1 , even after 100 cycles of charging and discharging. The results from the differential voltage analysis showed a side reaction at around 0.44–0.5 V, and the specific potential of this side reaction decreased after each cycle. The apparent diffusion coefficients of the two anode types were in the range of 10 −13 –10 −16 cm 2 s −1 in the first cycle. In subsequent charge cycles, these values for the silicon thin film anodes and the silicon nanorod bundle anode were approximately 10 −12 –10 −14 and 10 −13 –10 −15 cm 2 s −1 , respectively.

Guided ultrasonic wave beam skew in silicon wafers

Science.gov (United States)

Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

2018-04-01

In the photovoltaic industry, monocrystalline silicon wafers are employed for solar cells with high conversion efficiency. Micro-cracks induced by the cutting process in the thin wafers can lead to brittle wafer fracture. Guided ultrasonic waves would offer an efficient methodology for the in-process non-destructive testing of wafers to assess micro-crack density. The material anisotropy of the monocrystalline silicon leads to variations of the guided wave characteristics, depending on the propagation direction relative to the crystal orientation. Selective guided ultrasonic wave excitation was achieved using a contact piezoelectric transducer with custom-made wedges for the A0 and S0 Lamb wave modes and a transducer holder to achieve controlled contact pressure and orientation. The out-of-plane component of the guided wave propagation was measured using a non-contact laser interferometer. The phase slowness (velocity) of the two fundamental Lamb wave modes was measured experimentally for varying propagation directions relative to the crystal orientation and found to match theoretical predictions. Significant wave beam skew was observed experimentally, especially for the S0 mode, and investigated from 3D finite element simulations. Good agreement was found with the theoretical predictions based on nominal material properties of the silicon wafer. The important contribution of guided wave beam skewing effects for the non-destructive testing of silicon wafers was demonstrated.

Strained silicon/silicon germanium heterojunction n-channel metal oxide semiconductor field effect transistors

International Nuclear Information System (INIS)

Olsen, Sarah H.

2002-01-01

Investigations into the performance of strained silicon/silicon-germanium (Si/SiGe) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) have been carried out. Theoretical predictions suggest that use of a strained Si/SiGe material system with advanced material properties compared with conventional silicon allows enhanced MOSFET device performance. This study has therefore investigated the practical feasibility of obtaining superior electrical performance using a Si/SiGe material system. The MOSFET devices consisted of a strained Si surface channel and were fabricated on relaxed SiGe material using a reduced thermal budget process in order to preserve the strain. Two batches of strained Si/SiGe devices fabricated on material grown by differing methods have been analysed and both showed good transistor action. A correlation of electrical and physical device data established that the electrical device behaviour was closely related to the SiGe material quality, which differed depending on growth technique. The cross-wafer variation in the electrical performance of the strained Si/SiGe devices was found to be a function of material quality, thus the viability of Si/SiGe MOSFET technology for commercial applications has been addressed. Of particular importance was the finding that large-scale 'cross-hatching' roughness associated with relaxed SiGe alloys led to degradation in the small-scale roughness at the gate oxide interface, which affects electrical device performance. The fabrication of strained Si MOSFET devices on high quality SiGe material thus enabled significant performance gains to be realised compared with conventional Si control devices. In contrast, the performance of devices fabricated on material with severe cross-hatching roughness was found to be diminished by the nanoscale oxide interface roughness. The effect of device processing on SiGe material with differing as-grown roughness has been carried out and compared with the reactions

Durable crystalline Si photovoltaic modules based on silicone-sheet encapsulants

Science.gov (United States)

Hara, Kohjiro; Ohwada, Hiroto; Furihata, Tomoyoshi; Masuda, Atsushi

2018-02-01

Crystalline Si photovoltaic (PV) modules were fabricated with sheets of poly(dimethylsiloxane) (silicone) as an encapsulant. The long-term durability of the silicone-encapsulated PV modules was experimentally investigated. The silicone-based modules enhanced the long-term durability against potential-induced degradation (PID) and a damp-heat (DH) condition at 85 °C with 85% relative humidity (RH). In addition, we designed and fabricated substrate-type Si PV modules based on the silicone encapsulant and an Al-alloy plate as the substratum, which demonstrated high impact resistance and high incombustible performance. The high chemical stability, high volume resistivity, rubber-like elasticity, and incombustibility of the silicone encapsulant resulted in the high durability of the modules. Our results indicate that silicone is an attractive encapsulation material, as it improves the long-term durability of crystalline Si PV modules.

Silicon Alloying On Aluminium Based Alloy Surface

International Nuclear Information System (INIS)

Suryanto

2002-01-01

Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

Graphene synthesized on porous silicon for active electrode material of supercapacitors

Science.gov (United States)

Su, B. B.; Chen, X. Y.; Halvorsen, E.

2016-11-01

We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm2 while that without catalyst layer was 145μF/cm2. We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors.

Analyses and characterization of fossil carbonaceous materials for silicon production

Energy Technology Data Exchange (ETDEWEB)

Myrvaagnes, Viktor

2008-01-15

Production of high silicon alloys is carried out in submerged arc furnaces by reduction of silicon bearing oxides (typically quartz) with carbon materials. Carbonaceous materials like coal, coke, charcoal and woodchips are commonly used as reduction materials in the process. Primarily based on historical prices of charcoal compared to fossil reduction materials, the Norwegian Ferroalloy Industry has mostly been using coal and coke (char) as the source of carbon. From a process point of view, the most important role of the carbonaceous material is to react with SiO gas to produce SiC. The ability of the reduction materials to react with SiO gas can be measured and the value is recognized as the reactivity of the carbon source. Reactivity is one of the most important parameters in the smelting process and is commonly acknowledged to strongly affect both productivity and specific energy consumption. The main objectives of this work has been to establish methods to characterize the material properties of fossil carbonaceous reduction materials used in the silicon process and to evaluated how these properties affect the reactivity towards SiO gas. In order to accomplish these objectives, three run of mine (ROM) single seam coals which are particularly well suited for ferroalloy production were selected. Two Carboniferous coals from USA (Blue Gem) and Poland (Staszic) with similar rank, but significantly different composition as well as a Permian coal from Australia (Peak Downs) have been characterized by chemical- and petrographical methods. Blue Gem is a homogeneous coal, low in mineral inclusions and macerals of the inertinite group and determined to have a random vitrinite reflectance of 0.71 %. Staszic has a similar reflectance of vitrinite (0.72 %), but is determined to be a very inhomogeneous coal with both inertinite macerals and minerals embedded in the vitrinite matrix. Peak Downs has a random reflectance of vitrinite of 1.32 % and is hence the coal sample of

Continuous Czochralski growth: Silicon sheet growth development of the large area sheet task of the low cost silicon solar array project

Science.gov (United States)

Johnson, C. M.

1980-12-01

The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg of silicon single crystal material 15 cm or greater utilizing one common silicon container material (one crucible) is investigated. A crystal grower that is recharged with a new supply of polysilicon material while still under vacuum and at temperatures above the melting point of silicon is developed. It accepts large polysilicon charges up to 30 kg, grows large crystal ingots (to 15 cm diameter and 25 kg in weight), and holds polysilicon material for recharging (rod or lump) while, at the same time, growing crystal ingots. Special equipment is designed to recharge polysilicon rods, recharge polysilicon lumps, and handle and store large, hot silicon crystal ingots. Many continuous crystal growth runs were performed lasting as long as 109 hours and producing as many as ten crystal ingots, 15 cm with weights progressing to 27 kg.

Characterization of oxygen dimer-enriched silicon detectors

CERN Document Server

Boisvert, V; Moll, M; Murin, L I; Pintilie, I

2005-01-01

Various types of silicon material and silicon p+n diodes have been treated to increase the concentration of the oxygen dimer (O2i) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 °C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.

Photoconductivity of amorphous silicon-rigorous modelling

International Nuclear Information System (INIS)

Brada, P.; Schauer, F.

1991-01-01

It is our great pleasure to express our gratitude to Prof. Grigorovici, the pioneer of the exciting field of amorphous state by our modest contribution to this area. In this paper are presented the outline of the rigorous modelling program of the steady-state photoconductivity in amorphous silicon and related materials. (Author)

Doping of silicon with carbon during laser ablation process

Science.gov (United States)

Račiukaitis, G.; Brikas, M.; Kazlauskienė, V.; Miškinis, J.

2006-12-01

The effect of laser ablation on properties of remaining material in silicon was investigated. It was found that laser cutting of wafers in the air induced the doping of silicon with carbon. The effect was more distinct when using higher laser power or UV radiation. Carbon ions created bonds with silicon atoms in the depth of the material. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion to clarify its depth profile in silicon was performed. Photochemical reactions of such type changed the structure of material and could be the reason of the reduced machining quality. The controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

Photon-Enhanced Thermionic Emission in Cesiated p-Type and n-Type Silicon

DEFF Research Database (Denmark)

Reck, Kasper; Dionigi, Fabio; Hansen, Ole

2014-01-01

electrons. Efficiencies above 60% have been predicted theoretically for high solar concentration systems. Silicon is an interesting absorber material for high efficiency PETE solar cells, partly due to its mechanical and thermal properties and partly due to its electrical properties, including a close......Photon-enhanced thermionic emission (PETE) is a relatively new concept for high efficiency solar cells that utilize not only the energy of electrons excited across the band gap by photons, as in conventional photovoltaic solar cells, but also the energy usual lost to thermalization of the excited...... to ideal band gap. The work function of silicon is, however, too high for practical PETE implementations. A well-known method for lowering the work function of silicon (and other materials) is to apply approximately a monolayer of cesium to the silicon surface. We present the first measurements of PETE...

Graphene synthesized on porous silicon for active electrode material of supercapacitors

International Nuclear Information System (INIS)

Su, B B; Chen, X Y; Halvorsen, E

2016-01-01

We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm 2 while that without catalyst layer was 145μF/cm 2 . We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors. (paper)

Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

International Nuclear Information System (INIS)

Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

2000-01-01

In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

Science.gov (United States)

Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

2015-08-01

A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

Intensifying the Casimir force between two silicon substrates within three different layers of materials

International Nuclear Information System (INIS)

Seyedzahedi, A.; Moradian, A.; Setare, M.R.

2016-01-01

We investigate the Casimir force for a system composed of two thick slabs as substrates within three different homogeneous layers. We use the scattering approach along with the Matsubara formalism in order to calculate the Casimir force at finite temperature. First, we focus on constructing the reflection matrices and then we calculate the Casimir force for a water–lipid system. According to the conventional use of silicon as a substrate, we apply the formalism to calculate the Casimir force for layers of Au, VO 2 , mica, KCl and foam rubber on the thick slabs of silicon. Afterwards, introducing an increasing factor, we compare our results with Lifshitz force in the vacuum between two semispaces of silicon in order to illustrate the influence of the layers on intensifying the Casimir force. We also calculate the Casimir force between two slabs of the forementioned materials with finite thicknesses to indicate the substrate's role in increasing the obtained Casimir force. Our simple calculation is interesting since one can extend it along with the Rigorous Coupled Wave Analysis to systems containing inhomogeneous layers as good candidates for designing nanomechanical devices.

Intensifying the Casimir force between two silicon substrates within three different layers of materials

Energy Technology Data Exchange (ETDEWEB)

Seyedzahedi, A. [Department of Science, University of Kurdistan, Sanandaj (Iran, Islamic Republic of); Moradian, A., E-mail: a.moradian@uok.ac.ir [Department of Science, Campus of Bijar, University of Kurdistan, Bijar (Iran, Islamic Republic of); Setare, M.R., E-mail: rezakord@ipm.ir [Department of Science, University of Kurdistan, Sanandaj (Iran, Islamic Republic of)

2016-04-01

We investigate the Casimir force for a system composed of two thick slabs as substrates within three different homogeneous layers. We use the scattering approach along with the Matsubara formalism in order to calculate the Casimir force at finite temperature. First, we focus on constructing the reflection matrices and then we calculate the Casimir force for a water–lipid system. According to the conventional use of silicon as a substrate, we apply the formalism to calculate the Casimir force for layers of Au, VO{sub 2}, mica, KCl and foam rubber on the thick slabs of silicon. Afterwards, introducing an increasing factor, we compare our results with Lifshitz force in the vacuum between two semispaces of silicon in order to illustrate the influence of the layers on intensifying the Casimir force. We also calculate the Casimir force between two slabs of the forementioned materials with finite thicknesses to indicate the substrate's role in increasing the obtained Casimir force. Our simple calculation is interesting since one can extend it along with the Rigorous Coupled Wave Analysis to systems containing inhomogeneous layers as good candidates for designing nanomechanical devices.

Facile synthesis and stable cycling ability of hollow submicron silicon oxide–carbon composite anode material for Li-ion battery

Energy Technology Data Exchange (ETDEWEB)

Kim, Joong-Yeon; Nguyen, Dan Thien [Department of Fine Chemical Engineering & Applied Chemistry, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kang, Joon-Sup [Department of Energy Science and Technology, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Song, Seung-Wan, E-mail: swsong@cnu.ac.kr [Department of Fine Chemical Engineering & Applied Chemistry, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Department of Energy Science and Technology, Chungnam National University, Daejeon 305-764 (Korea, Republic of)

2015-06-05

Highlights: • Hollow submicron SiO{sub 2}–carbon composite material was synthesized using Si{sup 4+}-citrate chelation. • Composite material possessed a homogeneous distribution of SiO{sub 2} and carbon. • Composite electrode delivered ⩾600 mAh/g with a stable cycling stability. • This materials design and synthesis provides a useful platform for scalable production. - Abstract: Advanced SiO{sub 2}–carbon composite anode active material for lithium-ion battery has been synthesized through a simple chelation of silicon cation with citrate in a glyme-based solvent. The resultant composite material demonstrates a homogeneous distribution of constituents over the submicron particles and a unique hollow spherical microstructure, which provides an enhanced electrical conductivity and better accommodation of volume change of silicon during electrochemical charge–discharge cycling, respectively. As a result, the composite electrode exhibits a high cycling stability delivering the capacity retention of 91% at the 100th cycle and discharge capacities of 662–602 mAh/g and coulombic efficiencies of 99.8%. This material synthesis is scalable and cost-effective in preparing various submicron or micron composite electrode materials.

Electrochemical characteristics of porous TiO2 encapsulated silicon anode

International Nuclear Information System (INIS)

Jeon, Bup Ju; Lee, Joong Kee

2011-01-01

Graphical abstract: Cycling performances of the TiO 2 coated silicon anode at different catalyst pH values. Display Omitted Highlights: → TiO 2 coated silicon was used as the anode material for lithium batteries. → TiO 2 layer acted as a buffer layer for reducing the volume expansion. → Pore size distribution of TiO 2 coated silicon influenced discharge capacity. → Higher capacity retention was exhibited at pH 10.7. - Abstract: TiO 2 coated silicon, which was prepared by the modified sol-gel method, was employed as the anode material for lithium secondary batteries and the relationship between the diffusivity and electrochemical characteristics was investigated. The results showed that the physical properties of the samples, such as their diffusivity and pore size distribution, enhanced the cycling efficiency of the TiO 2 coated silicon, probably due to the reduction of the side reactions, which may be closely related to the pore size distribution of the TiO 2 coating layer. The pore size of the coating layer plays an important role in retarding the lithium ion diffusion. In the experimental range studied herein, higher capacity retention was exhibited for the TiO 2 coated silicon prepared at pH 10.7.

Athermal silicon optical add-drop multiplexers based on thermo-optic coefficient tuning of sol-gel material.

Science.gov (United States)

Namnabat, Soha; Kim, Kyung-Jo; Jones, Adam; Himmelhuber, Roland; DeRose, Christopher T; Trotter, Douglas C; Starbuck, Andrew L; Pomerene, Andrew; Lentine, Anthony L; Norwood, Robert A

2017-09-04

Silicon photonics has gained interest for its potential to provide higher efficiency, bandwidth and reduced power consumption compared to electrical interconnects in datacenters and high performance computing environments. However, it is well known that silicon photonic devices suffer from temperature fluctuations due to silicon's high thermo-optic coefficient and therefore, temperature control in many applications is required. Here we present an athermal optical add-drop multiplexer fabricated from ring resonators. We used a sol-gel inorganic-organic hybrid material as an alternative to previously used materials such as polymers and titanium dioxide. In this work we studied the thermal curing parameters of the sol-gel and their effect on thermal wavelength shift of the rings. With this method, we were able to demonstrate a thermal shift down to -6.8 pm/°C for transverse electric (TE) polarization in ring resonators with waveguide widths of 325 nm when the sol-gel was cured at 130°C for 10.5 hours. We also achieved thermal shifts below 1 pm/°C for transverse magnetic (TM) polarization in the C band under different curing conditions. Curing time compared to curing temperature shows to be the most important factor to control sol-gel's thermo-optic value in order to obtain an athermal device in a wide temperature range.

Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

Directory of Open Access Journals (Sweden)

Konstantinos Pantzas

2015-10-01

Full Text Available Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si surfaces and nanostructured ones, using Silicon on Isolator (SOI or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

A theoretical approach to photosynthetically active radiation silicon sensor

International Nuclear Information System (INIS)

Tamasi, M.J.L.; Martínez Bogado, M.G.

2013-01-01

This paper presents a theoretical approach for the development of low cost radiometers to measure photosynthetically active radiation (PAR). Two alternatives are considered: a) glass optical filters attached to a silicon sensor, and b) dielectric coating on a silicon sensor. The devices proposed are based on radiometers previously developed by the Argentine National Atomic Energy Commission. The objective of this work is to adapt these low cost radiometers to construct reliable instruments for measuring PAR. The transmittance of optical filters and sensor response have been analyzed for different dielectric materials, number of layers deposited, and incidence angles. Uncertainties in thickness of layer deposition were evaluated. - Highlights: • Design of radiometers to measure photosynthetically active radiation • The study has used a filter and a Si sensor to modify spectral response. • Dielectric multilayers on glass and silicon sensor • Spectral response related to different incidence angles, materials and spectra

Recombination via point defects and their complexes in solar silicon

Energy Technology Data Exchange (ETDEWEB)

Peaker, A.R.; Markevich, V.P.; Hamilton, B. [Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Parada, G.; Dudas, A.; Pap, A. [Semilab, 2 Prielle Kornelia Str, 1117 Budapest (Hungary); Don, E. [Semimetrics, PO Box 36, Kings Langley, Herts WD4 9WB (United Kingdom); Lim, B.; Schmidt, J. [Institute for Solar Energy Research (ISFH) Hamlen, 31860 Emmerthal (Germany); Yu, L.; Yoon, Y.; Rozgonyi, G. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

2012-10-15

Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <10{sup 10} cm{sup -3}). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi-crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi-crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi-crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Porous silicon gettering

Energy Technology Data Exchange (ETDEWEB)

Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

Influence of ion bombardment on microcrystalline silicon material quality and solar cell performances

OpenAIRE

Bugnon, G; Feltrin, A; Sculati-Meillaud, F; Bailat, J; Ballif, C

2008-01-01

Microcrystalline hydrogenated silicon growth with VHF-PECVD was examined in an industrial type parallel plate KAITM reactor. The influence of pressure on material quality was studied in single junction solar cells. Solar cells with their intrinsic layer prepared at higher pressures exhibit remarkable improvements, reaching 8.2% efficiency at 3.5 mbar. Further analyzes showed that μc- Si:H intrinsic layers grown at higher pressures have a significantly lower defect density. These results are a...

Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

Science.gov (United States)

Wananuruksawong, R.; Jinawath, S.; Padipatvuthikul, P.; Wasanapiarnpong, T.

2011-10-01

Silicon nitride (Si3N4) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si3N4 ceramic as a dental core material. The white Si3N4 was prepared by pressureless sintering at relative low sintering temperature of 1650 °C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si3N4 ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si3N4 specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder (tube furnace between 1000-1200°C. The veneered specimens fired at 1100°C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98×10-6 °C-1, rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

Experimental investigation on material migration phenomena in micro-EDM of reaction-bonded silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Liew, Pay Jun [Department of Mechanical Systems and Design, Tohoku University, Aramaki Aoba 6-6-01, Aoba-ku, Sendai, 980-8579 (Japan); Manufacturing Process Department, Faculty of Manufacturing Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100, Durian Tunggal, Melaka (Malaysia); Yan, Jiwang, E-mail: yan@mech.keio.ac.jp [Department of Mechanical Engineering, Faculty of Science and Technology, Keio University, Hiyoshi 3-14-1, Kohoku-ku, Yokohama, 223-8522 (Japan); Kuriyagawa, Tsunemoto [Department of Mechanical Systems and Design, Tohoku University, Aramaki Aoba 6-6-01, Aoba-ku, Sendai, 980-8579 (Japan)

2013-07-01

Material migration between tool electrode and workpiece material in micro electrical discharge machining of reaction-bonded silicon carbide was experimentally investigated. The microstructural changes of workpiece and tungsten tool electrode were examined using scanning electron microscopy, cross sectional transmission electron microscopy and energy dispersive X-ray under various voltage, capacitance and carbon nanofibre concentration in the dielectric fluid. Results show that tungsten is deposited intensively inside the discharge-induced craters on the RB-SiC surface as amorphous structure forming micro particles, and on flat surface region as a thin interdiffusion layer of poly-crystalline structure. Deposition of carbon element on tool electrode was detected, indicating possible material migration to the tool electrode from workpiece material, carbon nanofibres and dielectric oil. Material deposition rate was found to be strongly affected by workpiece surface roughness, voltage and capacitance of the electrical discharge circuit. Carbon nanofibre addition in the dielectric at a suitable concentration significantly reduced the material deposition rate.

Experimental investigation on material migration phenomena in micro-EDM of reaction-bonded silicon carbide

International Nuclear Information System (INIS)

Liew, Pay Jun; Yan, Jiwang; Kuriyagawa, Tsunemoto

2013-01-01

Material migration between tool electrode and workpiece material in micro electrical discharge machining of reaction-bonded silicon carbide was experimentally investigated. The microstructural changes of workpiece and tungsten tool electrode were examined using scanning electron microscopy, cross sectional transmission electron microscopy and energy dispersive X-ray under various voltage, capacitance and carbon nanofibre concentration in the dielectric fluid. Results show that tungsten is deposited intensively inside the discharge-induced craters on the RB-SiC surface as amorphous structure forming micro particles, and on flat surface region as a thin interdiffusion layer of poly-crystalline structure. Deposition of carbon element on tool electrode was detected, indicating possible material migration to the tool electrode from workpiece material, carbon nanofibres and dielectric oil. Material deposition rate was found to be strongly affected by workpiece surface roughness, voltage and capacitance of the electrical discharge circuit. Carbon nanofibre addition in the dielectric at a suitable concentration significantly reduced the material deposition rate.

Amphiphilic silicone architectures via anaerobic thiol-ene chemistry.

Science.gov (United States)

Keddie, Daniel J; Grande, John B; Gonzaga, Ferdinand; Brook, Michael A; Dargaville, Tim R

2011-11-18

Despite broad application, few silicone-based surfactants of known structure or, therefore, surfactancy have been prepared because of an absence of selective routes and instability of silicones to acid and base. Herein the synthesis of a library of explicit silicone-poly(ethylene glycol) (PEG) materials is reported. Pure silicone fragments were generated by the B(C(6)F(5))(3)-catalyzed condensation of alkoxysilanes and vinyl-functionalized hydrosilanes. The resulting pure products were coupled to thiol-terminated PEG materials using photogenerated radicals under anaerobic conditions.

Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

Institute of Scientific and Technical Information of China (English)

LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

2004-01-01

The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

Custom 3D Printable Silicones with Tunable Stiffness.

Science.gov (United States)

Durban, Matthew M; Lenhardt, Jeremy M; Wu, Amanda S; Small, Ward; Bryson, Taylor M; Perez-Perez, Lemuel; Nguyen, Du T; Gammon, Stuart; Smay, James E; Duoss, Eric B; Lewicki, James P; Wilson, Thomas S

2018-02-01

Silicone elastomers have broad versatility within a variety of potential advanced materials applications, such as soft robotics, biomedical devices, and metamaterials. A series of custom 3D printable silicone inks with tunable stiffness is developed, formulated, and characterized. The silicone inks exhibit excellent rheological behavior for 3D printing, as observed from the printing of porous structures with controlled architectures. Herein, the capability to tune the stiffness of printable silicone materials via careful control over the chemistry, network formation, and crosslink density of the ink formulations in order to overcome the challenging interplay between ink development, post-processing, material properties, and performance is demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development and Evaluation of Die Materials for Use in the Growth of Silicon Ribbons by the Inverted Ribbon Growth Process. Task 2: LSSA Project

Science.gov (United States)

Duffy, M. T.; Berkman, S.; Moss, H. I.; Cullen, G. W.

1978-01-01

Several ribbon growth experiments were performed from V-shaped dies coated with CVD Si3N4. The most significant result was the ability to perform five consecutive growth runs from the same die without mechanical degradation of the die through temperature cycling. The die was made from vitreous carbon coated with CVD Si3N4. Silicon oxynitride, Si2N2O, was examined with respect to thermal stability in contact with molten silicon. The results of X-ray analysis indicate that this material is converted to both alpha - and beta-Si3N4 in the presence of molten silicon. Experiments on the stability of CVD SiOxNy shoe that this material can be maintained in contact with molten silicon (sessile drop test) for greater than 30 h at 1450 C without total decompositon. These layers are converted mainly to beta-Si3N4.

Luminescence of porous silicon doped by erbium

International Nuclear Information System (INIS)

Bondarenko, V.P.; Vorozov, N.N.; Dolgij, L.N.; Dorofeev, A.M.; Kazyuchits, N.M.; Leshok, A.A.; Troyanova, G.N.

1996-01-01

The possibility of the 1.54 μm intensive luminescence in the silicon dense porous layers, doped by erbium, with various structures is shown. Low-porous materials of both porous type on the p-type silicon and porous silicon with wood-like structure on the n + type silicon may be used for formation of light-emitting structures

Silicon Nanocrystal Synthesis in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

Kinetics of cluster-related defects in silicon sensors irradiated with monoenergetic electrons

Science.gov (United States)

Radu, R.; Pintilie, I.; Makarenko, L. F.; Fretwurst, E.; Lindstroem, G.

2018-04-01

This work focuses on the kinetic mechanisms responsible for the annealing behavior of radiation cluster-related defects with impact on the electrical performance of silicon sensors. Such sensors were manufactured on high resistivity n-type standard float-zone (STFZ) and oxygen enriched float-zone (DOFZ) material and had been irradiated with mono-energetic electrons of 3.5 MeV energy and fluences of 3 × 1014 cm-2 and 6 × 1014 cm-2. After irradiation, the samples were subjected either to isochronal or isothermal heat treatments in the temperature range from 80 °C to 300 °C. The specific investigated defects are a group of three deep acceptors [H(116 K), H(140 K), and H(152 K)] with energy levels in the lower half of the band gap and a shallow donor E(30 K) with a level at 0.1 eV below the conduction band. The stability and kinetics of these defects at high temperatures are discussed on the basis of the extracted activation energies and frequency factors. The annealing of the H defects takes place similarly in both types of materials, suggesting a migration rather than a dissociation mechanism. On the contrary, the E(30 K) defect shows a very different annealing behavior, being stable in STFZ even at 300 °C, but annealing-out quickly in DOFZ material at temperatures higher than 200 °C , with a high frequency factor of the order of 1013 s-1. Such a behavior rules out a dissociation process, and the different annealing behavior is suggested to be related to a bistable behavior of the defect.

Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

Science.gov (United States)

Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

1978-01-01

Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

Defects study of hydrogenated amorphous silicon samples and their relation with the substrate and deposition conditions

International Nuclear Information System (INIS)

Darwich, R.

2009-07-01

The goal of this work is to study the properties of the defects aiming to explore the types of defects and the effect of various deposition parameters such as substrate temperature, the kind of the substrate, gas pressure and deposition rate. Two kinds of samples have been used; The first one was a series of Schottky diodes, and the second one a series of solar cells (p-i-n junction) deposited on crystalline silicon or on corning glass substrates with different deposition parameters. The deposition parameters were chosen to obtain materials whose their structures varying from amorphous to microcrystalline silicon including polymorphous silicon. Our results show that the polymorphous silicon samples deposited at high deposition rates present the best photovoltaic properties in comparison with those deposited at low rates. Also we found that the defects concentration in high deposition rate samples is less at least by two orders than that obtained in low deposition rate polymorphous, microcrystalline and amorphous samples. This study shows also that there is no effect of the substrate, or the thin films of highly doped amorphous silicon deposited on the substrate, on the creation and properties of these defects. Finally, different experimental methods have been used; a comparison between their results has been presented. (author)

Doping of silicon by carbon during laser ablation process

Science.gov (United States)

Raciukaitis, G.; Brikas, M.; Kazlauskiene, V.; Miskinis, J.

2007-04-01

Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser power or UV radiation. Carbon ions created bonds with silicon in the depth of silicon. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion was performed to clarify its depth profile in silicon. Photo-chemical reactions of such type changed the structure of material and could be a reason for the reduced quality of machining. A controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

Doping of silicon by carbon during laser ablation process

International Nuclear Information System (INIS)

Raciukaitis, G; Brikas, M; Kazlauskiene, V; Miskinis, J

2007-01-01

Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser power or UV radiation. Carbon ions created bonds with silicon in the depth of silicon. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion was performed to clarify its depth profile in silicon. Photo-chemical reactions of such type changed the structure of material and could be a reason for the reduced quality of machining. A controlled atmosphere was applied to prevent carbonization of silicon during laser cutting

Semiconducting silicon nanowires for biomedical applications

CERN Document Server

Coffer, JL

2014-01-01

Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

Structural modification of silicon during the formation process of porous silicon

International Nuclear Information System (INIS)

Martin-Palma, R.J.; Pascual, L.; Landa-Canovas, A.R.; Herrero, P.; Martinez-Duart, J.M.

2005-01-01

Direct examination of porous silicon (PS) by the use of high resolution transmission electron microscopy (HRTEM) allowed us to perform a deep insight into the formation mechanisms of this material. In particular, the structure of the PS/Si interface and that of the silicon nanocrystals that compose porous silicon were analyzed in detail. Furthermore, image processing was used to study in detail the structure of PS. The mechanism of PS formation and lattice matching between the PS layer and the Si substrate is analyzed and discussed. Finally, a formation mechanism for PS based on the experimental observations is proposed

Ion assisted deposition of SiO2 film from silicon

Science.gov (United States)

Pham, Tuan. H.; Dang, Cu. X.

2005-09-01

Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

Functional silicone copolymers and elastomers with high dielectric permittivity

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Daugaard, Anders Egede; Hvilsted, Søren

Dielectric elastomers (DEs) are a new and promising transducer technology and are often referred to as ‘artificial muscles’, due to their ability to undergo large deformations when stimulated by electric fields. DEs consist of a soft and thin elastomeric film sandwiched between compliant electrodes......, thereby forming a capacitor [1]. Silicone elastomers are one of the most used materials for DEs due to their high efficiency, fast response times and low viscous losses. The major disadvantage of silicone elastomers is that they possess relatively low dielectric permittivity, which means that a high...... electrical field is necessary to operate the DE. The necessary electrical field can be lowered by creating silicone elastomers with higher dielectric permittivity, i.e. with a higher energy density.The aim of this work is to create new and improved silicone elastomers with high dielectric permittivity...

Irradiation study of different silicon materials for the CMS tracker upgrade

CERN Document Server

Erfle, Joachim; Hansen, Wolfgang; Garutti, Erika

Around 2022, an upgrade of the LHC collider complex is planned to significantly increase the luminosity (the High Luminosity LHC, HL-LHC). This means that the experiments have to cope with a higher number of collisions per bunch crossing and survive in a radiation environment much harsher than that at the present LHC. Especially the tracking detectors have to be improved for the HL-LHC. The increased number of tracks requires an increase of the number of readout channels while the higher radiation makes new sensor materials necessary. Within CMS, a measurement campaign was initiated to study the performance of different silicon materials in a corresponding radiation environment. To simulate the expected radiation the samples were irradiated with neutrons and with protons with two different energies. Radiation damage can be divided in two categories. First, ionizing energy loss in the surface isolation layers of the sensor leads to a change of the concentration of charged states in the sensor surface and there...

Twenty-fold plasmon-induced enhancement of radiative emission rate in silicon nanocrystals embedded in silicon dioxide

International Nuclear Information System (INIS)

Gardelis, S; Gianneta, V.; Nassiopoulou, A.G

2016-01-01

We report on a 20-fold enhancement of the integrated photoluminescence (PL) emission of silicon nanocrystals, embedded in a matrix of silicon dioxide, induced by excited surface plasmons from silver nanoparticles, which are located in the vicinity of the silicon nanocrystals and separated from them by a silicon dioxide layer of a few nanometers. The electric field enhancement provided by the excited surface plasmons increases the absorption cross section and the emission rate of the nearby silicon nanocrystals, resulting in the observed enhancement of the photoluminescence, mainly attributed to a 20-fold enhancement in the emission rate of the silicon nanocrystals. The observed remarkable improvement of the PL emission makes silicon nanocrystals very useful material for photonic, sensor and solar cell applications.

Novel fabrication of silicon carbide based ceramics for nuclear applications

Science.gov (United States)

Singh, Abhishek Kumar

Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous

Advanced Non-Destructive Assessment Technology to Determine the Aging of Silicon Containing Materials for Generation IV Nuclear Reactors

Science.gov (United States)

Koenig, T. W.; Olson, D. L.; Mishra, B.; King, J. C.; Fletcher, J.; Gerstenberger, L.; Lawrence, S.; Martin, A.; Mejia, C.; Meyer, M. K.; Kennedy, R.; Hu, L.; Kohse, G.; Terry, J.

2011-06-01

To create an in-situ, real-time method of monitoring neutron damage within a nuclear reactor core, irradiated silicon carbide samples are examined to correlate measurable variations in the material properties with neutron fluence levels experienced by the silicon carbide (SiC) during the irradiation process. The reaction by which phosphorus doping via thermal neutrons occurs in the silicon carbide samples is known to increase electron carrier density. A number of techniques are used to probe the properties of the SiC, including ultrasonic and Hall coefficient measurements, as well as high frequency impedance analysis. Gamma spectroscopy is also used to examine residual radioactivity resulting from irradiation activation of elements in the samples. Hall coefficient measurements produce the expected trend of increasing carrier concentration with higher fluence levels, while high frequency impedance analysis shows an increase in sample impedance with increasing fluence.

Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

International Nuclear Information System (INIS)

Astakhov, Oleksandr; Carius, Reinhard; Finger, Friedhelm; Petrusenko, Yuri; Borysenko, Valery; Barankov, Dmytro

2009-01-01

The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparing intrinsic amorphous and microcrystalline silicon, it is found that the relationship between defect density and photoconductivity is different in both undoped materials, while a similar strong influence of the position of the Fermi level on photoconductivity via the charge carrier lifetime is found in the doped materials. The latter allows a quantitative determination of the value of the transport gap energy in microcrystalline silicon. The photoconductivity in intrinsic microcrystalline silicon is, on one hand, considerably less affected by the bombardment but, on the other hand, does not generally recover with annealing of the defects and is independent from the spin density which itself can be annealed back to the as-deposited level. For amorphous silicon and material prepared close to the crystalline growth regime, the results for nonequilibrium transport fit perfectly to a recombination model based on direct capture into neutral dangling bonds over a wide range of defect densities. For the heterogeneous microcrystalline silicon, this model fails completely. The application of photoconductivity spectroscopy in the constant photocurrent mode (CPM) is explored for the entire structure composition range over a wide variation in defect densities. For amorphous silicon previously reported linear correlation between the spin density and the subgap absorption is confirmed for defect densities below 10 18 cm -3 . Beyond this defect level, a sublinear relation is found i.e., not

Silicon-Polymer Encapsulation of High-Level Calcine Waste for Transportation or Disposal

International Nuclear Information System (INIS)

Loomis, G.G.; Miller, C.M.; Giansiracusa, J.A.; Kimmel, R.; Prewett, S.V.

2000-01-01

This report presents the results of an experimental study investigating the potential uses for silicon-polymer encapsulation of High Level Calcine Waste currently stored within the Idaho Nuclear Technology and Engineering Center (INTEC) at the Idaho National Engineering and Environmental Laboratory (INEEL). The study investigated two different applications of silicon polymer encapsulation. One application uses silicon polymer to produce a waste form suitable for disposal at a High Level Radioactive Waste Disposal Facility directly, and the other application encapsulates the calcine material for transportation to an offsite melter for further processing. A simulated waste material from INTEC, called pilot scale calcine, which contained hazardous materials but no radioactive isotopes was used for the study, which was performed at the University of Akron under special arrangement with Orbit Technologies, the originators of the silicon polymer process called Polymer Encapsulation Technology (PET). This document first discusses the PET process, followed by a presentation of past studies involving PET applications to waste problems. Next, the results of an experimental study are presented on encapsulation of the INTEC calcine waste as it applies to transportation or disposal of calcine waste. Results relating to long-term disposal include: (1) a characterization of the pilot calcine waste; (2) Toxicity Characteristic Leaching Procedure (TCLP) testing of an optimum mixture of pilot calcine, polysiloxane and special additives; and, (3) Material Characterization Center testing MCC-1P evaluation of the optimum waste form. Results relating to transportation of the calcine material for a mixture of maximum waste loading include: compressive strength testing, 10-m drop test, melt testing, and a Department of Transportation (DOT) oxidizer test

Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

Science.gov (United States)

Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

2013-01-22

Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

Hydrogen molecules and hydrogen-related defects in crystalline silicon

OpenAIRE

Fukata, N.; Sasak, S.; Murakami, K.; Ishioka, K.; Nakamura, K. G.; Kitajima, M.; Fujimura, S.; Kikuchi, J.; Haneda, H.

1997-01-01

We have found that hydrogen exists in molecular form in crystalline silicon treated with hydrogen atoms in the downstream of a hydrogen plasma. The vibrational Raman line of hydrogen molecules is observed at 4158cm-1 for silicon samples hydrogenated between 180 and 500 °C. The assignment of the Raman line is confirmed by its isotope shift to 2990cm-1 for silicon treated with deuterium atoms. The Raman intensity has a maximum for hydrogenation at 400 °C. The vibrational Raman line of the hydro...

18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

Energy Technology Data Exchange (ETDEWEB)

Sopori, B. L.

2008-09-01

The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

Photo-Machining of Semiconductor Related Materials with Femtosecond Laser Ablation and Characterization of Its Properties

Science.gov (United States)

Yokotani, Atushi; Mizuno, Toshio; Mukumoto, Toru; Kawahara, Kousuke; Ninomiya, Takahumi; Sawada, Hiroshi; Kurosawa, Kou

We have analyzed the drilling process with femtosecond laser on the silicon surface in order to investigate a degree of thermal effect during the dicing process of the very thin silicon substrate. A regenerative amplified Ti:Al2O3 laser (E= 30˜500 μJ/pulse, τ= 200 fs, λ= 780 nm, f= 10 Hz) was used and focused onto a 50 μm-thick silicon sample. ICCD (Intensified Charge coupled Device) camera with a high-speed gate of 5 ns was utilized to take images of processing hole. First, we investigated the dependence of laser energy on the speed of the formation of the drilled hole. As a result, it was found that the lager the energy, the slower the speed of the formation under the minimum hole was obtained. Consequently, in the case of defocused condition, even when the smaller the energy density was used, the very slow speed of formation and the much lager thermal effects are simultaneously observed. So we can say that the degree of the thermal effects is not simply related to energy density of the laser but strongly related to the speed of the formation, which can be measured by the ICCD camera. The similar tendency was also obtained for other materials, which are important for the fabrication of ICs (Al, Cu, SiO2 and acrylic resin).

Characterization of Amorphous Silicon Advanced Materials and PV Devices: Final Technical Report, 15 December 2001--31 January 2005

Energy Technology Data Exchange (ETDEWEB)

Taylor, P. C.

2005-11-01

The major objectives of this subcontract have been: (1) understand the microscopic properties of the defects that contribute to the Staebler-Wronski effect to eliminate this effect, (2) perform correlated studies on films and devices made by novel techniques, especially those with promise to improve stability or deposition rates, (3) understand the structural, electronic, and optical properties of films of hydrogenated amorphous silicon (a-Si:H) made on the boundary between the amorphous and microcrystalline phases, (4) search for more stable intrinsic layers of a-Si:H, (5) characterize the important defects, impurities, and metastabilities in the bulk and at surfaces and interfaces in a-Si:H films and devices and in important alloy systems, and (6) make state-of-the-art plasma-enhanced chemical vapor deposition (PECVD) devices out of new, advanced materials, when appropriate. All of these goals are highly relevant to improving photovoltaic devices based on a-Si:H and related alloys. With regard to the first objective, we have identified a paired hydrogen site that may be the defect that stabilizes the silicon dangling bonds formed in the Staebler-Wronski effect.

Hybrid III-V/silicon lasers

Science.gov (United States)

Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

2014-05-01

The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

Production of Solar Grade (SoG) Silicon by Refining Liquid Metallurgical Grade (MG) Silicon: Final Report, 19 April 2001; FINAL

International Nuclear Information System (INIS)

Khattack, C. P.; Joyce, D. B.; Schmid, F.

2001-01-01

This report summarizes the results of the developed technology for producing SoG silicon by upgrading MG silicon with a cost goal of$20/kg in large-scale production. A Heat Exchanger Method (HEM) furnace originally designed to produce multicrystalline ingots was modified to refine molten MG silicon feedstock prior to directional solidification. Based on theoretical calculations, simple processing techniques, such as gas blowing through the melt, reaction with moisture, and slagging have been used to remove B from molten MG silicon. The charge size was scaled up from 1 kg to 300 kg in incremental steps and effective refining was achieved. After the refining parameters were established, improvements to increase the impurity reduction rates were emphasized. With this approach, 50 kg of commercially available as-received MG silicon was processed for a refining time of about 13 hours. A half life of and lt;2 hours was achieved, and the B concentration was reduced to 0.3 ppma and P concentration to 10 ppma from the original values of 20 to 60 ppma, and all other impurities to and lt;0.1 ppma. Achieving and lt;1 ppma B by this simple refining technique is a breakthrough towards the goal of achieving low-cost SoG silicon for PV applications. While the P reduction process was being optimized, the successful B reduction process was applied to a category of electronics industry silicon scrap previously unacceptable for PV feedstock use because of its high B content (50-400 ppma). This material after refining showed that its B content was reduced by several orders of magnitude, to(approx)1 ppma (0.4 ohm-cm, or about 5x1016 cm-3). NREL's Silicon Materials Research team grew and wafered small and lt;100 and gt; dislocation-free Czochralski (Cz) crystals from the new feedstock material for diagnostic tests of electrical properties, C and O impurity levels, and PV performance relative to similar crystals grown from EG feedstock and commercial Cz wafers. The PV conversion

A review of recent progress in heterogeneous silicon tandem solar cells

Science.gov (United States)

Yamaguchi, Masafumi; Lee, Kan-Hua; Araki, Kenji; Kojima, Nobuaki

2018-04-01

Silicon solar cells are the most established solar cell technology and are expected to dominate the market in the near future. As state-of-the-art silicon solar cells are approaching the Shockley-Queisser limit, stacking silicon solar cells with other photovoltaic materials to form multi-junction devices is an obvious pathway to further raise the efficiency. However, many challenges stand in the way of fully realizing the potential of silicon tandem solar cells because heterogeneously integrating silicon with other materials often degrades their qualities. Recently, above or near 30% silicon tandem solar cell has been demonstrated, showing the promise of achieving high-efficiency and low-cost solar cells via silicon tandem. This paper reviews the recent progress of integrating solar cell with other mainstream solar cell materials. The first part of this review focuses on the integration of silicon with III-V semiconductor solar cells, which is a long-researched topic since the emergence of III-V semiconductors. We will describe the main approaches—heteroepitaxy, wafer bonding and mechanical stacking—as well as other novel approaches. The second part introduces the integration of silicon with polycrystalline thin-film solar cells, mainly perovskites on silicon solar cells because of its rapid progress recently. We will also use an analytical model to compare the material qualities of different types of silicon tandem solar cells and project their practical efficiency limits.

Silicon oxynitride based photonics

NARCIS (Netherlands)

Worhoff, Kerstin; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M.; Jaworski, M.; Zdanowicz, M.

2008-01-01

Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material

Magnetically retained silicone facial prosthesis

African Journals Online (AJOL)

2013-06-09

Jun 9, 2013 ... Prosthetic camouflaging of facial defects and use of silicone maxillofacial material are the alternatives to the surgical retreatment. Silicone elastomers provide more options to clinician for customization of the facial prosthesis which is simple, esthetically good when coupled with bio magnets for retention.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

Science.gov (United States)

Czapski, M.; Stora, T.; Tardivat, C.; Deville, S.; Santos Augusto, R.; Leloup, J.; Bouville, F.; Fernandes Luis, R.

2013-12-01

New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

Effect of calcium/silicon ratio on retention of uranium (VI) in portland cement materials

International Nuclear Information System (INIS)

Tan Hongbin; Li Yuxiang

2005-01-01

Calcium silicate hydrate (CSH) materials of varied calcium to silicon (Ca/Si) ratios were prepared by hydrothermal synthesis at 80 degree C, with calcium oxide and micro-silicon employed. These products were determined to be of gel phase by XRD. Leaching tests with 1% hydrochloric acid indicated that more Uranium (VI) was detained by CSH with lower Ca/Si ratios. Alkali-activated slag cement (with a lower Ca/Si ratio) was found to have a stronger retention capacity than Portland cement (with a higher Ca/Si ratio), at 25 degree C in 102-days leaching tests with simulated solidified forms containing Uranium (VI). The accumulative leaching fraction of Uranium (VI) for Alkali-activated slag cement solidified forms is 17.6% lower than that for Portland cement. The corresponding difference of diffusion coefficients is 40.6%. This could be correlated with the difference of Ca/Si ratios between cements of two kinds. (authors)

Radiation resistant passivation of silicon solar cells

International Nuclear Information System (INIS)

Swanson, R.M.; Gan, J.Y.; Gruenbaum, P.E.

1991-01-01

This patent describes a silicon solar cell having improved stability when exposed to concentrated solar radiation. It comprises a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in the body for collecting electrons and holes created by impinging radiation, and a passivation layer on the major surface including a first layer of silicon oxide in contact with the body and a polycrystalline silicon layer on the first layer of silicon oxide

Hybrid Integrated Platforms for Silicon Photonics

Science.gov (United States)

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

2010-01-01

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Silicon photonics for telecommunications and biomedicine

CERN Document Server

Fathpour, Sasan

2011-01-01

Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

Science.gov (United States)

Singh, M.; Behrendt, D. R.

1992-01-01

Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

Silicon crystal growth using a liquid-feeding Czochralski method

Science.gov (United States)

Shiraishi, Yutaka; Kurosaka, Shoei; Imai, Masato

1996-09-01

Silicon single crystals with uniformity along the growth direction were grown using a new continuous Czochralski (CCZ) method. Polycrystalline silicon rods used as charge materials are melted by carbon heaters over a crucible without contact between the raw material and other substances. Using this method, silicon crystals with diameters as large as 6 or 8 inch and good uniformity along the growth direction were grown.

Thin film silicon photovoltaics: Architectural perspectives and technological issues

Energy Technology Data Exchange (ETDEWEB)

Mercaldo, Lucia Vittoria; Addonizio, Maria Luisa; Noce, Marco Della; Veneri, Paola Delli; Scognamiglio, Alessandra; Privato, Carlo [ENEA, Portici Research Center, Piazzale E. Fermi, 80055 Portici (Napoli) (Italy)

2009-10-15

Thin film photovoltaics is a particularly attractive technology for building integration. In this paper, we present our analysis on architectural issues and technological developments of thin film silicon photovoltaics. In particular, we focus on our activities related to transparent and conductive oxide (TCO) and thin film amorphous and microcrystalline silicon solar cells. The research on TCO films is mainly dedicated to large-area deposition of zinc oxide (ZnO) by low pressure-metallorganic chemical vapor deposition. ZnO material, with a low sheet resistance (<8 {omega}/sq) and with an excellent transmittance (>82%) in the whole wavelength range of photovoltaic interest, has been obtained. ''Micromorph'' tandem devices, consisting of an amorphous silicon top cell and a microcrystalline silicon bottom cell, are fabricated by using the very high frequency plasma enhanced chemical vapor deposition technique. An initial efficiency of 11.1% (>10% stabilized) has been obtained. (author)

Penis augmentation by application of silicone material: complications and surgical treatment.

Science.gov (United States)

Sukop, A; Heracek, J; Mestak, O; Borský, J; Bayer, J; Schwarzmannová, K

2013-01-01

Complications resulting from enlargement of the penis by applications of unknown types of silicone and mineral oils are well described. Surgical removal of the tissue altered by inflammation leads to the development of defects of various sizes, often circular from the glans penis to the scrotum. The options of subsequent surgical treatment described in literature are not very extensive. Most defects are managed with skin grafting, rarely V-Y advancement or bilateral scrotal flaps. We present a 36-year-old patient after application of unknown silicone material into the penis for cosmetic enlargement. After the application developed severe inflammation with ulceration and necrosis around the penis. Conservative treatment was not effective, therefore, the infiltrated skin with subcutaneous tissue of the entire penis was surgically removed. The resulting defect was covered by implantation of the penis under the skin of the scrotum. There were no complications in the postoperative course, pain that was present before the surgery immediately subsided. Skin suture healed completely within 14 days. Three months after the surgery the patient returned to normal sexual life. Implantation of the penis under the skin of the scrotum is a fast, safe and effective method that can treat most of the circular skin defects of the penis. Scrotal skin is thin, soft, elastic and creates abundant and good cover around the entire penis.

Characterization of Czochralski Silicon Detectors

OpenAIRE

Luukka, Panja-Riina; Haerkoenen, Jaakko

2012-01-01

This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

Oxygen measurements in thin ribbon silicon

Energy Technology Data Exchange (ETDEWEB)

Hyland, S L; Ast, D G; Baghdadi, A

1987-03-01

The oxygen content of thin silicon ribbons grown by the dendritic web technique was measured using a modification of the ASTM method based on Fourier transform infrared spectroscopy. Web silicon was found to have a high oxygen content, ranging from 13 to 19 ppma, calculated from the absorption peak associated with interstitial oxygen and using the new ASTM conversion coefficient. The oxygen concentration changed by about 10% along the growth direction of the ribbon. In some samples, a shoulder was detected on the absorption peak. A similar shoulder in Czochralski grown material has been variously interpreted in the literature as due to a complex of silicon, oxygen, and vacancies, or to a phase of SiO/sub 2/ developed along dislocations in the material. In the case of web silicon, it is not clear which is the correct interpretation.

Achievement report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Investigation and research on analyzing practical application of a technology to manufacture solar cell silicon raw materials; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

This paper describes the achievement in fiscal 1997 of analyzing practical application of a technology to manufacture solar cell silicon raw materials. Silicon consumption for solar cells in fiscal 1997 has increased to 2000-ton level, and the supply has been very tight. For drastic improvement in the demand and supply situation, development of SOG-Si manufacturing technology and its early practical application are desired. The development of the NEDO mass-production technology using melting and refining has completed constructing the process facilities in fiscal 1998, and will enter the stage of operational research. However, insufficiency in the basic data about behavior of impurities is inhibiting the development. In the substrate manufacturing technology, discussions have shown progress on use of diversifying silicons outside the standard by using the electromagnetic casting process. For slicing and processing the substrates, development of a high-performance slicing equipment and automatic rough rinsing machine is under way. Properties required on silicon raw materials vary considerably widely because of difference in cell making systems and conditions, which is attributable to unknown impurity behavior. When 1GW production is assumed, the cell module manufacturing cost is calculated as 137 yen/W, for which low-cost mass production for its realization, slicing productivity enhancement, and cost reduction are required. The paper also describes site surveys in overseas countries. (NEDO)

Fiscal 1993 R and D project for industrial science and technology. Report on results of R and D on silicon-based high polymer material; 1993 nendo keisokei kobunshi zairyo no kenkyu kaihtsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1994-03-01

R and D was conducted on the silicon-based high polymer that are hoped for superior electronic/optical functions and heat/flame-resistant dynamical properties, for the purpose of establishing fundamental technologies such as molecular design, synthesis, material forming and evaluation method, with the fiscal 1993 results summarized. In the synthesis of electrically conductive silicon-based polymeric materials, a concept of indirect doping was presented, revealing that workability and electrically conductive properties were enhanced by additives. In the synthesis of new silicon-based polymeric materials capable of circuit plotting, studies were made on Si-Si bond forming reaction of alkoxydisilanes as well as on the correlation between polysilane skeleton structure and its property. In the synthesis of new silicon-based polymeric materials having for example a light-emitting function, evaluation was made on synthesis and light emitting property concerning the compound that controlled the silicon skeleton structure. In addition, R and D was conducted on the precision synthesis technology of compounds, on which manifestation of photoelectric conversion function was expected. Further, research was done on unsaturated and high coordination organosilicic compound, functionality of silicon-based high polymer, and synthesis/polymerization of silicon monomer. (NEDO)

Single Stage Silicone Border Molded Closed Mouth Impression Technique-Part II.

Science.gov (United States)

Solomon, E G R

2011-09-01

Functioning of a complete denture depends to a great extent on the impression technique. Several impression techniques have been described in the literature since the turn of this century when Greene [Clinical courses in dental prothesis, 1916] brothers introduced the first scientific system of recording dental impression. Advocates of each technique have their own claim of superiority over the other. The introduction of elastomeric impression materials [Skinner and Cooper, J Am Dent Assoc 51:523-536, 1955] has made possible new techniques of recording impression for complete denture construction. These rubber like materials are of two types; one has a polysulfide base and is popularily known as polysulfide rubber (Thiokol and Mercaptan). The other variety has a silicone base known as silicone rubber or silicone elastomer. Silicone elastomers are available in four different consistencies; a thin easy flowing light bodied material,a creamy medium bodied material, a highly viscous heavy bodied material and a kneadable putty material. This paper describes an active closed mouth impression technique with one stage border molding using putty silicone material as a substitute for low fusing compound.

Hydrogen molecules and hydrogen-related defects in crystalline silicon

Science.gov (United States)

Fukata, N.; Sasaki, S.; Murakami, K.; Ishioka, K.; Nakamura, K. G.; Kitajima, M.; Fujimura, S.; Kikuchi, J.; Haneda, H.

1997-09-01

We have found that hydrogen exists in molecular form in crystalline silicon treated with hydrogen atoms in the downstream of a hydrogen plasma. The vibrational Raman line of hydrogen molecules is observed at 4158 cm-1 for silicon samples hydrogenated between 180 and 500 °C. The assignment of the Raman line is confirmed by its isotope shift to 2990 cm-1 for silicon treated with deuterium atoms. The Raman intensity has a maximum for hydrogenation at 400 °C. The vibrational Raman line of the hydrogen molecules is broad and asymmetric. It consists of at least two components, possibly arising from hydrogen molecules in different occupation sites in crystalline silicon. The rotational Raman line of hydrogen molecules is observed at 590 cm-1. The Raman band of Si-H stretching is observed for hydrogenation temperatures between 100 and 500 °C and the intensity has a maximum for hydrogenation at 250 °C.

Silicon germanium as a novel mask for silicon deep reactive ion etching

KAUST Repository

Serry, Mohamed Y.

2013-10-01

This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

Infrared characterization of some oxygen-related defects in Czochralski silicon

International Nuclear Information System (INIS)

Hallberg, T.

1993-01-01

This thesis is based on the work made at Linkoeping University at the Department of Physics and Measurement Technology. It is divided into two parts. The first part is a short introduction to defects in silicon, Fourier transform infrared spectroscopy as well as some physics involved in semiconductor crystals. The second part consists of two papers: Enhanced oxygen precipitation in electron irradiated silicon. Annealing of electron irradiated antimony-doped Czochralski silicon

Hydrogenated amorphous silicon radiation detectors: Material parameters; radiation hardness; charge collection

International Nuclear Information System (INIS)

Qureshi, S.

1991-01-01

Properties of hydrogenated amorphous silicon p-i-n diodes relevant to radiation detection applications were studied. The interest in using this material for radiation detection applications in physics and medicine was motivated by its high radiation hardness and the fact that it can be deposited over large area at relatively low cost. Thick, fully depleted a-Si:H diodes are required for sufficient energy deposition by a charged particle and better signal to noise ratio. A sizeable electric field is essential for charge collection in a -Si:H diodes. The large density of ionized defects that exist in the i layer when the diode is under DC bias causes the electric field to be uniform. Material parameters, namely carrier mobility and lifetime and the ionized defect density in thick a-Si:H p-i-n diodes were studied by the transient photoconductivity method. The increase in diode leakage current with reverse bias over the operating bias was consistent with the Poole-Frenkel effect, involving excitation of carriers from neutral defects. The diode noise over the operating voltage range was completely explained in terms of the shot noise component for CR-(RC) 4 (pseudo-Gaussian) shaping at 3 μs shaping time and the noise component at 0 V bias (delta and thermal noise) added in quadrature. Irradiation with 1 Mev neutrons produced no significant degradation in leakage current and noise at fluences exceeding 4 x 10 14 cm -2 . Irradiation with 1.4 Mev proton fluence of 1 x 10 14 cm -2 decreased carrier lifetime by a factor of ∼4. Degradation in leakage current and noise became significant at proton fluence of ∼10 13 cm -2

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Hydrogen interactions with silicon-on-insulator materials

NARCIS (Netherlands)

Rivera de Mena, A.J.

2003-01-01

The booming of microelectronics in recent decades has been made possible by the excellent properties of the Si/SiO2 interface in oxide on silicon systems.. This semiconductor/insulator combination has proven to be of great value for the semiconductor industry. It has made it possible to continuously

Carbon nanotube-coated silicone as a flexible and electrically conductive biomedical material

International Nuclear Information System (INIS)

Matsuoka, Makoto; Akasaka, Tsukasa; Totsuka, Yasunori; Watari, Fumio

2012-01-01

Artificial cell scaffolds that support cell adhesion, growth, and organization need to be fabricated for various purposes. Recently, there have been increasing reports of cell patterning using electrical fields. We fabricated scaffolds consisting of silicone sheets coated with single-walled (SW) or multi-walled (MW) carbon nanotubes (CNTs) and evaluated their electrical properties and biocompatibility. We also performed cell alignment with dielectrophoresis using CNT-coated sheets as electrodes. Silicone coated with 10 μg/cm 2 SWCNTs exhibited the least sheet resistance (0.8 kΩ/sq); its conductivity was maintained even after 100 stretching cycles. CNT coating also improved cell adhesion and proliferation. When an electric field was applied to the cell suspension introduced on the CNT-coated scaffold, the cells became aligned in a pearl-chain pattern. These results indicate that CNT coating not only provides electro-conductivity but also promotes cell adhesion to the silicone scaffold; cells seeded on the scaffold can be organized using electricity. These findings demonstrate that CNT-coated silicone can be useful as a biocompatible scaffold. - Highlights: ► We fabricated a CNT-coated silicone which has conductivity and biocompatibility. ► The conductivity was maintained after 100 cycles of stretching. ► CNT coatings enabled C2C12 cells adhere to the silicone surface. ► Cells were aligned with dielectrophoresis between CNT-coated silicone surfaces.

Crystal growth for high-efficiency silicon solar cells workshop: Summary

Science.gov (United States)

Dumas, K. A.

1985-01-01

The state of the art in the growth of silicon crystals for high-efficiency solar cells are reviewed, sheet requirements are defined, and furture areas of research are identified. Silicon sheet material characteristics that limit cell efficiencies and yields were described as well as the criteria for the ideal sheet-growth method. The device engineers wish list to the material engineer included: silicon sheet with long minority carrier lifetime that is uniform throughout the sheet, and which doesn't change during processing; and sheet material that stays flat throughout device processing, has uniform good mechanical strength, and is low cost. Impurities in silicon solar cells depreciate cell performance by reducing diffusion length and degrading junctions. The impurity behavior, degradation mechanisms, and variations in degradation threshold with diffusion length for silicon solar cells were described.

Research Update: Phonon engineering of nanocrystalline silicon thermoelectrics

Directory of Open Access Journals (Sweden)

Junichiro Shiomi

2016-10-01

Full Text Available Nanocrystalline silicon thermoelectrics can be a solution to improve the cost-effectiveness of thermoelectric technology from both material and integration viewpoints. While their figure-of-merit is still developing, recent advances in theoretical/numerical calculations, property measurements, and structural synthesis/fabrication have opened up possibilities to develop the materials based on fundamental physics of phonon transport. Here, this is demonstrated by reviewing a series of works on nanocrystalline silicon materials using calculations of multiscale phonon transport, measurements of interfacial heat conduction, and synthesis from nanoparticles. Integration of these approaches allows us to engineer phonon transport to improve the thermoelectric performance by introducing local silicon-oxide structures.

Dissolution chemistry and biocompatibility of single-crystalline silicon nanomembranes and associated materials for transient electronics.

Science.gov (United States)

Hwang, Suk-Won; Park, Gayoung; Edwards, Chris; Corbin, Elise A; Kang, Seung-Kyun; Cheng, Huanyu; Song, Jun-Kyul; Kim, Jae-Hwan; Yu, Sooyoun; Ng, Joanne; Lee, Jung Eun; Kim, Jiyoung; Yee, Cassian; Bhaduri, Basanta; Su, Yewang; Omennetto, Fiorenzo G; Huang, Yonggang; Bashir, Rashid; Goddard, Lynford; Popescu, Gabriel; Lee, Kyung-Mi; Rogers, John A

2014-06-24

Single-crystalline silicon nanomembranes (Si NMs) represent a critically important class of material for high-performance forms of electronics that are capable of complete, controlled dissolution when immersed in water and/or biofluids, sometimes referred to as a type of "transient" electronics. The results reported here include the kinetics of hydrolysis of Si NMs in biofluids and various aqueous solutions through a range of relevant pH values, ionic concentrations and temperatures, and dependence on dopant types and concentrations. In vitro and in vivo investigations of Si NMs and other transient electronic materials demonstrate biocompatibility and bioresorption, thereby suggesting potential for envisioned applications in active, biodegradable electronic implants.

Hybrid Integrated Platforms for Silicon Photonics

Directory of Open Access Journals (Sweden)

John E. Bowers

2010-03-01

Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Silicon on insulator self-aligned transistors

Science.gov (United States)

McCarthy, Anthony M.

2003-11-18

A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

Effects of pore design on mechanical properties of nanoporous silicon

International Nuclear Information System (INIS)

Winter, Nicholas; Becton, Matthew; Zhang, Liuyang; Wang, Xianqiao

2017-01-01

Nanoporous silicon has been emerging as a powerful building block for next-generation sensors, catalysts, transistors, and tissue scaffolds. The capability to design novel devices with desired mechanical properties is paramount to their reliability and serviceability. In order to bring further resolution to the highly variable mechanical characteristics of nanoporous silicon, here we perform molecular dynamics simulations to study the effects of ligament thickness, relative density, and pore geometry/orientation on the mechanical properties of nanoporous silicon, thereby determining its Young's modulus, ultimate strength, and toughness as well as the scaling laws versus the features of interior ligaments. Results show that pore shape and pattern dictate stress accumulation inside the designed structure, leading to the corresponding failure signature, such as stretching-dominated, bending-dominated, or stochastic failure signatures, in nanoporous silicon. The nanostructure of the material is also seen to drive or mute size effects such as “smaller is stronger” and “smaller is ductile”. This investigation provides useful insight into the behavior of nanoporous silicon and how one might leverage its promising applications. - Graphical abstract: Molecular dynamics simulations are performed to study the effects of ligament thickness, relative density, and pore geometry/orientation on the mechanical properties of nanoporous silicon, thereby determining its Young's modulus, ultimate strength, and toughness as well as the scaling trends versus the features of interior ligaments.

Soft silicone based interpenetrating networks as materials for actuators

DEFF Research Database (Denmark)

Yu, Liyun; Gonzalez, Lidia; Hvilsted, Søren

2014-01-01

A new approach based on silicone interpenetrating networks with orthogonal chemistries has been investigated with focus on developing soft and flexible elastomers with high energy densities and small viscous losses. The interpenetrating networks are made as simple two pot mixtures...... as for the commercial available silylation based elastomers such as Elastosil RT625. The resulting interpenetrating networks are formulated to be softer than RT625 to increase the actuation caused when applying a voltage due to their softness combined with the significantly higher permittivity than the pure silicone...

PREFACE: E-MRS 2012 Spring Meeting, Symposium M: More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics

Science.gov (United States)

Wenger, Christian; Fompeyrine, Jean; Vallée, Christophe; Locquet, Jean-Pierre

2012-12-01

More than Moore explores a new area of Silicon based microelectronics, which reaches beyond the boundaries of conventional semiconductor applications. Creating new functionality to semiconductor circuits, More than Moore focuses on motivating new technological possibilities. In the past decades, the main stream of microelectronics progresses was mainly powered by Moore's law, with two focused development arenas, namely, IC miniaturization down to nano scale, and SoC based system integration. While the microelectronics community continues to invent new solutions around the world to keep Moore's law alive, there is increasing momentum for the development of 'More than Moore' technologies which are based on silicon technologies but do not simply scale with Moore's law. Typical examples are RF, Power/HV, Passives, Sensor/Actuator/MEMS or Bio-chips. The More than Moore strategy is driven by the increasing social needs for high level heterogeneous system integration including non-digital functions, the necessity to speed up innovative product creation and to broaden the product portfolio of wafer fabs, and the limiting cost and time factors of advanced SoC development. It is believed that More than Moore will add value to society on top of and beyond advanced CMOS with fast increasing marketing potentials. Important key challenges for the realization of the 'More than Moore' strategy are: perspective materials for future THz devices materials systems for embedded sensors and actuators perspective materials for epitaxial approaches material systems for embedded innovative memory technologies development of new materials with customized characteristics The Hot topics covered by the symposium M (More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics) at E-MRS 2012 Spring Meeting, 14-18 May 2012 have been: development of functional ceramics thin films New dielectric materials for advanced microelectronics bio- and CMOS compatible

Porous silicon carbide (SIC) semiconductor device

Science.gov (United States)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1996-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

Energy Technology Data Exchange (ETDEWEB)

Sopori, B. L.

2007-08-01

The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

Second order optical nonlinearity in silicon by symmetry breaking

Energy Technology Data Exchange (ETDEWEB)

Cazzanelli, Massimo, E-mail: massimo.cazzanelli@unitn.it [Laboratorio IdEA, Dipartimento di Fisica, Università di Trento, via Sommarive, 14 Povo (Trento) (Italy); Schilling, Joerg, E-mail: joerg.schilling@physik.uni-halle.de [Centre for Innovation Competence SiLi-nano, Martin-Luther-University Halle-Wittenberg, Karl-Freiherr-von-Fritsch Str. 3, 06120 Halle (Germany)

2016-03-15

Although silicon does not possess a dipolar bulk second order nonlinear susceptibility due to its centro-symmetric crystal structure, in recent years several attempts were undertaken to create such a property in silicon. This review presents the different sources of a second order susceptibility (χ{sup (2)}) in silicon and the connected second order nonlinear effects which were investigated up to now. After an introduction, a theoretical overview discusses the second order nonlinearity in general and distinguishes between the dipolar contribution—which is usually dominating in non-centrosymmetric structures—and the quadrupolar contribution, which even exists in centro-symmetric materials. Afterwards, the classic work on second harmonic generation from silicon surfaces in reflection measurements is reviewed. Due to the abrupt symmetry breaking at surfaces and interfaces locally a dipolar second order susceptibility appears, resulting in, e.g., second harmonic generation. Since the bulk contribution is usually small, the study of this second harmonic signal allows a sensitive observation of the surface/interface conditions. The impact of covering films, strain, electric fields, and defect states at the interfaces was already investigated in this way. With the advent of silicon photonics and the search for ever faster electrooptic modulators, the interest turned to the creation of a dipolar bulk χ{sup (2)} in silicon. These efforts have been focussing on several experiments applying an inhomogeneous strain to the silicon lattice to break its centro-symmetry. Recent results suggesting the impact of electric fields which are exerted from fixed charges in adjacent covering layers are also included. After a subsequent summary on “competing” concepts using not Si but Si-related materials, the paper will end with some final conclusions, suggesting possible future research direction in this dynamically developing field.

A study of luminescence from silicon-rich silica fabricated by plasma enhanced chemical vapour deposition

International Nuclear Information System (INIS)

Trwoga, P.F.

1998-01-01

Silicon is the most studied electronic material known to man and dominates the electronics industry in its use as a semiconductors for nearly all integrated electronics. However, optoelectronics is almost entirely based on III-V materials. This technology is used because silicon is a very inefficient light source, whereas the III-V band structure can lend itself to efficient light emission by electron injection. However, due to the overwhelming dominance of silicon based electronics it is still a highly desirable goal to generate light efficiently from silicon based materials. Recently, studies have demonstrated that efficient visible luminescence can be obtained from certain novel forms of silicon. These materials include porous silicon, hydrogenated amorphous silicon, and silicon-rich silica (SiO x x x is studied in detail; in addition, electroluminescence and rare-earth doping of silicon-rich silica is also addressed. (author)

Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

KAUST Repository

Bahabry, Rabab R.

2017-01-01

. However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption

High damage tolerance of electrochemically lithiated silicon

Science.gov (United States)

Wang, Xueju; Fan, Feifei; Wang, Jiangwei; Wang, Haoran; Tao, Siyu; Yang, Avery; Liu, Yang; Beng Chew, Huck; Mao, Scott X.; Zhu, Ting; Xia, Shuman

2015-01-01

Mechanical degradation and resultant capacity fade in high-capacity electrode materials critically hinder their use in high-performance rechargeable batteries. Despite tremendous efforts devoted to the study of the electro–chemo–mechanical behaviours of high-capacity electrode materials, their fracture properties and mechanisms remain largely unknown. Here we report a nanomechanical study on the damage tolerance of electrochemically lithiated silicon. Our in situ transmission electron microscopy experiments reveal a striking contrast of brittle fracture in pristine silicon versus ductile tensile deformation in fully lithiated silicon. Quantitative fracture toughness measurements by nanoindentation show a rapid brittle-to-ductile transition of fracture as the lithium-to-silicon molar ratio is increased to above 1.5. Molecular dynamics simulations elucidate the mechanistic underpinnings of the brittle-to-ductile transition governed by atomic bonding and lithiation-induced toughening. Our results reveal the high damage tolerance in amorphous lithium-rich silicon alloys and have important implications for the development of durable rechargeable batteries. PMID:26400671

Synthesis of Silicon Nanocrystals in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

Mechanical engineering and design of silicon-based particle tracking devices

International Nuclear Information System (INIS)

Miller, W.O.; Thompson, T.C.; Gamble, M.T.; Reid, R.S.; Woloshun, K.A.; Dransfield, G.D.; Ziock, H.J.

1990-01-01

The Mechanical Engineering and Electronics Division of the Los Alamos National Laboratory has been investigating silicon-based particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, thermal, and materials issues have been addressed. This paper discussed detector structural integrity and stability, including detailed finite element models of the silicon chip support and predictive methods used in designing with advanced composite materials. Electronic thermal loading and efficient dissipation of such energy using heat pipe technology has been investigated. The use of materials whose coefficients of thermal expansion are engineered to match silicon or to be near zero, as appropriate, have been explored. Material analysis and test results from radiation, chemical, and static loading are compared with analytical predictions and discussed. 1 ref., 2 figs., 1 tab

Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

CERN Document Server

Czapski, M; Tardivat, C; Stora, T; Bouville, F; Leloup, J; Luis, R Fernandes; Augusto, R Santos

2013-01-01

New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLORA codes. (C) 2013 Elsevier B.V. All rights reserved.

A fabrication guide for planar silicon quantum dot heterostructures

Science.gov (United States)

Spruijtenburg, Paul C.; Amitonov, Sergey V.; van der Wiel, Wilfred G.; Zwanenburg, Floris A.

2018-04-01

We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.

Characterization of Czochralski silicon detectors

OpenAIRE

Luukka, Panja-Riina

2006-01-01

This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

Development of an SU-8 MEMS process with two metal electrodes using amorphous silicon as a sacrificial material

KAUST Repository

Ramadan, Khaled S.

2013-02-08

This work presents an SU-8 surface micromachining process using amorphous silicon as a sacrificial material, which also incorporates two metal layers for electrical excitation. SU-8 is a photo-patternable polymer that is used as a structural layer for MEMS and microfluidic applications due to its mechanical properties, biocompatibility and low cost. Amorphous silicon is used as a sacrificial layer in MEMS applications because it can be deposited in large thicknesses, and can be released in a dry method using XeF2, which alleviates release-based stiction problems related to MEMS applications. In this work, an SU-8 MEMS process was developed using ;-Si as a sacrificial layer. Two conductive metal electrodes were integrated in this process to allow out-of-plane electrostatic actuation for applications like MEMS switches and variable capacitors. In order to facilitate more flexibility for MEMS designers, the process can fabricate dimples that can be conductive or nonconductive. Additionally, this SU-8 process can fabricate SU-8 MEMS structures of a single layer of two different thicknesses. Process parameters were optimized for two sets of thicknesses: thin (5-10 m) and thick (130 m). The process was tested fabricating MEMS switches, capacitors and thermal actuators. © 2013 IOP Publishing Ltd.

Naturally occurring 32 Si and low-background silicon dark matter detectors

Energy Technology Data Exchange (ETDEWEB)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope Si-32 represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of Si-32 and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the Si-32 concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of Si-32-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in Si-32. To quantitatively evaluate the Si-32 content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon-based detectors with low levels of Si-32, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Naturally occurring 32Si and low-background silicon dark matter detectors

Science.gov (United States)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon "ore" and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Current and future priorities for mass and material in silicon PV module recycling

Energy Technology Data Exchange (ETDEWEB)

Olson, C.L.; Geerligs, L.J.; Goris, M.J.A.A.; Bennett, I.J. [ECN Solar Energy, P.O. Box 1, 1755 ZG Petten (Netherlands); Clyncke, J. [PV CYCLE, Rue Montoyer 23, 1000 Brussels (Belgium)

2013-10-15

A full description of the state-of-the-art PV recycling methods and their rationale is presented, which discusses the quality of the recycled materials and the fate of the substances which end up in the landfill. The aim is to flag the PV module components currently not recycled, which may have a priority in terms of their embedded energy, chemical nature or scarcity, for the next evolution of recycling. The sustainability of different recycling options, emerging in the literature on electronic waste recycling, and the possible improvement of the environmental footprint of silicon PV modules, will be discussed.

Plasma processing of microcrystalline silicon films : filling in the gaps

NARCIS (Netherlands)

Bronneberg, A.C.

2012-01-01

Hydrogenated microcrystalline silicon (µc-Si:H) is a mixed-phase material consisting of crystalline silicon grains, hydrogenated amorphous silicon (a-Si:H) tissue, and voids. Microcrystalline silicon is extensively used as absorber layer in thin-film tandem solar cells, combining the advantages of a

Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

International Nuclear Information System (INIS)

Chao, D.S.; Liang, J.H.

2013-01-01

Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

NARCIS (Netherlands)

Lambertz, A.

2015-01-01

The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced

Silicon wafers for integrated circuit process

OpenAIRE

Leroy , B.

1986-01-01

Silicon as a substrate material will continue to dominate the market of integrated circuits for many years. We first review how crystal pulling procedures impact the quality of silicon. We then investigate how thermal treatments affect the behaviour of oxygen and carbon, and how, as a result, the quality of silicon wafers evolves. Gettering techniques are then presented. We conclude by detailing the requirements that wafers must satisfy at the incoming inspection.

Silicon containing copolymers

CERN Document Server

Amiri, Sahar; Amiri, Sanam

2014-01-01

Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

Science.gov (United States)

Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

2007-05-28

We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

Planar silicon sensors for the CMS Tracker upgrade

CERN Document Server

Junkes, Alexandra

2013-01-01

The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfills all requirements for detectors for the high-luminosity phase of the Large Hadron Collider (HL-LHC).A variety of silicon p-in-n and n-in-p test-sensors made from Float Zone, Deep-Diffused FZ and Magnetic Czochralski materials were manufactured by one single industrial producer, thus guaranteeing similar conditions for the production and design of the test-structures. Properties of different silicon materials and design choices have been systematically studied and compared.The samples have been irradiated with 1 MeV neutrons and protons corresponding to maximal fluences as expected for the positions of detector layers in the future tracker. Irradiations with protons of different energies (23 MeV and 23 GeV) have been performed to evaluate the energy dependence of the defect generation in oxygen rich material. All materials have been characterized before an...

Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

OpenAIRE

Tan, H.

2015-01-01

Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of photovoltaic (PV) devices which deploy the chemical-vapor-deposited hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) and their alloys as the absorber layers and doped ...

Amorphization of silicon by femtosecond laser pulses

International Nuclear Information System (INIS)

Jia, Jimmy; Li Ming; Thompson, Carl V.

2004-01-01

We have used femtosecond laser pulses to drill submicron holes in single crystal silicon films in silicon-on-insulator structures. Cross-sectional transmission electron microscopy and energy dispersive x-ray analysis of material adjacent to the ablated holes indicates the formation of a layer of amorphous Si. This demonstrates that even when material is ablated using femtosecond pulses near the single pulse ablation threshold, sufficient heating of the surrounding material occurs to create a molten zone which solidifies so rapidly that crystallization is bypassed

Colloidal characterization of silicon nitride and silicon carbide

Science.gov (United States)

Feke, Donald L.

1986-01-01

The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

Silicon-to-silicon wafer bonding using evaporated glass

DEFF Research Database (Denmark)

Weichel, Steen; Reus, Roger De; Lindahl, M.

1998-01-01

Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

International Nuclear Information System (INIS)

Wananuruksawong, R; Jinawath, S; Wasanapiarnpong, T; Padipatvuthikul, P

2011-01-01

Silicon nitride (Si 3 N 4 ) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si 3 N 4 ceramic as a dental core material. The white Si 3 N 4 was prepared by pressureless sintering at relative low sintering temperature of 1650 deg. C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si 3 N 4 ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si 3 N 4 specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder ( 2 O 3 - partial stabilized zirconia) and 30 wt% of polyvinyl alcohol (5 wt% solution). After coating the veneer on the Si 3 N 4 specimens, the firing was performed in electric tube furnace between 1000-1200 deg. C. The veneered specimens fired at 1100 deg. C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98x10 -6 deg. C -1 , rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

Dynamic Moisture Sorption and Desorption in Fumed Silica-filled Silicone Foam

Energy Technology Data Exchange (ETDEWEB)

Trautschold, Olivia Carol [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2016-09-02

Characterizing dynamic moisture sorption and desorption in fumed silica-filled silicone foam is necessary for determining material compatibilities and life predictions, particularly in sealed environments that may be exposed to a range of environmental conditions. Thermogravimetric analysis (TGA) and near infrared spectroscopy (NIR) were performed on S5470 fumed silica-filled silicone foam to determine the weight percent of moisture at saturation. Additionally, TGA was used to determine the time, temperature, and relative humidity levels required for sorption and desorption of physisorbed moisture in S5470.

Singlet oxygen sensitizing materials based on porous silicone: photochemical characterization, effect of dye reloading and application to water disinfection with solar reactors.

Science.gov (United States)

Manjón, Francisco; Santana-Magaña, Montserrat; García-Fresnadillo, David; Orellana, Guillermo

2010-06-01

Photogeneration of singlet molecular oxygen ((1)O(2)) is applied to organic synthesis (photooxidations), atmosphere/water treatment (disinfection), antibiofouling materials and in photodynamic therapy of cancer. In this paper, (1)O(2) photosensitizing materials containing the dyes tris(4,4'-diphenyl-2,2'-bipyridine)ruthenium(II) (1, RDB(2+)) or tris(4,7-diphenyl-1,10-phenanthroline)ruthenium(II) (2, RDP(2+)), immobilized on porous silicone (abbreviated RDB/pSil and RDP/pSil), have been produced and tested for waterborne Enterococcus faecalis inactivation using a laboratory solar simulator and a compound parabolic collector (CPC)-based solar photoreactor. In order to investigate the feasibility of its reuse, the sunlight-exposed RDP/pSil sensitizing material (RDP/pSil-a) has been reloaded with RDP(2+) (RDP/pSil-r). Surprisingly, results for bacteria inactivation with the reloaded material have demonstrated a 4-fold higher efficiency compared to those of either RDP/pSil-a, unused RDB/pSil and the original RDP/pSil. Surface and bulk photochemical characterization of the new material (RDP/pSil-r) has shown that the bactericidal efficiency enhancement is due to aggregation of the silicone-supported photosensitizer on the surface of the polymer, as evidenced by confocal fluorescence lifetime imaging microscopy (FLIM). Photogenerated (1)O(2) lifetimes in the wet sensitizer-doped silicone have been determined to be ten times longer than in water. These facts, together with the water rheology in the solar reactor and the interfacial production of the biocidal species, account for the more effective disinfection observed with the reloaded photosensitizing material. These results extend and improve the operational lifetime of photocatalytic materials for point-of-use (1)O(2)-mediated solar water disinfection.

Material synthesis for silicon integrated-circuit applications using ion implantation

Science.gov (United States)

Lu, Xiang

As devices scale down into deep sub-microns, the investment cost and complexity to develop more sophisticated device technologies have increased substantially. There are some alternative potential technologies, such as silicon-on-insulator (SOI) and SiGe alloys, that can help sustain this staggering IC technology growth at a lower cost. Surface SiGe and SiGeC alloys with germanium peak composition up to 16 atomic percent are formed using high-dose ion implantation and subsequent solid phase epitaxial growth. RBS channeling spectra and cross-sectional TEM studies show that high quality SiGe and SiGeC crystals with 8 atomic percent germanium concentration are formed at the silicon surface. Extended defects are formed in SiGe and SiGeC with 16 atomic percent germanium concentration. X-ray diffraction experiments confirm that carbon reduces the lattice strain in SiGe alloys but without significant crystal quality improvement as detected by RBS channeling spectra and XTEM observations. Separation by plasma implantation of oxygen (SPIMOX) is an economical method for SOI wafer fabrication. This process employs plasma immersion ion implantation (PIII) for the implantation of oxygen ions. The implantation rate for Pm is considerably higher than that of conventional implantation. The feasibility of SPIMOX has been demonstrated with successful fabrication of SOI structures implementing this process. Secondary ion mass spectrometry (SIMS) analysis and cross-sectional transmission electron microscopy (XTEM) micrographs of the SPIMOX sample show continuous buried oxide under single crystal overlayer with sharp silicon/oxide interfaces. The operational phase space of implantation condition, oxygen dose and annealing requirement has been identified. Physical mechanisms of hydrogen induced silicon surface layer cleavage have been investigated using a combination of microscopy and hydrogen profiling techniques. The evolution of the silicon cleavage phenomenon is recorded by a series

All-solid-state supercapacitors on silicon using graphene from silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au [Environmental Futures Research Institute, Griffith University, Nathan 4111 (Australia); Wood, Barry [Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia 4072 (Australia)

2016-05-02

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

International Nuclear Information System (INIS)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca; Wood, Barry

2016-01-01

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm"−"2 with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

FTIR studies of swift silicon and oxygen ion irradiated porous silicon

International Nuclear Information System (INIS)

Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

1999-01-01

Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

Low cost silicon solar array project silicon materials task: Establishment of the feasibility of a process capable of low-cost, high volume production of silane (step 1) and the pyrolysis of silane to semiconductor-grade silicon (step 2)

Science.gov (United States)

Breneman, W. C.; Cheung, H.; Farrier, E. G.; Morihara, H.

1977-01-01

A quartz fluid bed reactor capable of operating at temperatures of up to 1000 C was designed, constructed, and successfully operated. During a 30 minute experiment, silane was decomposed within the reactor with no pyrolysis occurring on the reactor wall or on the gas injection system. A hammer mill/roller-crusher system appeared to be the most practical method for producing seed material from bulk silicon. No measurable impurities were detected in the silicon powder produced by the free space reactor, using the cathode layer emission spectroscopic technique. Impurity concentration followed by emission spectroscopic examination of the residue indicated a total impurity level of 2 micrograms/gram. A pellet cast from this powder had an electrical resistivity of 35 to 45 ohm-cm and P-type conductivity.

Effects of Non-equilibrium Solidification on the Material Properties of Brick Silicon for Photovoltaics

Science.gov (United States)

Regnault, W. F.; Yoo, K. C.; Soltani, P. K.; Johnson, S. M.

1984-01-01

Silicon ingot growth technologies like the Ubiquitous Crystallization Process (UCP) are solidified within a shaping crucible. The rate at which heat can be lost from this crucible minus the rate at which heat is input from an external source determines the rate at which crystallization will occur. Occasionally, when the process parameters for solidification are exceeded, the normally large multi-centimeter grain size material assocated with the UCP will break down into regions containing extremely small, millimeter or less, grain size material. Accompanying this breakdown in grain growth is the development of so called sinuous grain boundaries. The breakdown in grain growth which results in this type of small grain structure with sinuous boundaries is usually associated with the rapid crystallization that would accompany a system failure. This suggests that there are limits to the growth velocity that one can obtain and still expect to produce material that would possess good photovoltaic properties. It is the purpose to determine the causes behind the breakdown of this material and what parameters will determine the best rates of solidification.

Mechanical Properties of Photovoltaic Silicon in Relation to Wafer Breakage

Science.gov (United States)

Kulshreshtha, Prashant Kumar

This thesis focuses on the fundamental understanding of stress-modified crack-propagation in photovoltaic (PV) silicon in relation to the critical issue of PV silicon "wafer breakage". The interactions between a propagating crack and impurities/defects/residual stresses have been evaluated for consequential fracture path in a thin PV Si wafer. To investigate the mechanism of brittle fracture in silicon, the phase transformations induced by elastic energy released at a propagating crack-tip have been evaluated by locally stressing the diamond cubic Si lattice using a rigid Berkovich nanoindenter tip (radius ≈50 nm). Unique pressure induced phase transformations and hardness variations have been then related to the distribution of precipitates (O, Cu, Fe etc.), and the local stresses in the wafer. This research demonstrates for the first time the "ductile-like fracture" in almost circular crack path that significantly deviates from its energetically favorable crystallographic [110](111) system. These large diameter (≈ 200 mm) Si wafers were sliced to less than 180 microm thickness from a Czochralski (CZ) ingot that was grown at faster than normal growth rates. The vacancy (vSi) driven precipitation of oxygen at enhanced thermal gradients in the wafer core develops large localized stresses (upto 100 MPa) which we evaluated using Raman spectral analysis. Additional micro-FTIR mapping and microscopic etch pit measurements in the wafer core have related the observed crack path deviations to the presence of concentric ring-like distributions of oxygen precipitates (OPs). To replicate these "real-world" breakage scenarios and provide better insight on crack-propagation, several new and innovative tools/devices/methods have been developed in this study. An accurate quantitative profiling of local stress, phase changes and load-carrying ability of Si lattice has been performed in the vicinity of the controlled micro-cracks created using micro-indentations to represent

Heterogeneous silicon mesostructures for lipid-supported bioelectric interfaces

Energy Technology Data Exchange (ETDEWEB)

Jiang, Yuanwen; Carvalho-de-Souza, João L.; Wong, Raymond C. S.; Luo, Zhiqiang; Isheim, Dieter; Zuo, Xiaobing; Nicholls, Alan W.; Jung, Il Woong; Yue, Jiping; Liu, Di-Jia; Wang, Yucai; De Andrade, Vincent; Xiao, Xianghui; Navrazhnykh, Luizetta; Weiss, Dara E.; Wu, Xiaoyang; Seidman, David N.; Bezanilla, Francisco; Tian, Bozhi

2016-06-27

Silicon-based materials have widespread application as biophysical tools and biomedical devices. Here we introduce a biocompatible and degradable mesostructured form of silicon with multi-scale structural and chemical heterogeneities. The material was synthesized using mesoporous silica as a template through a chemical vapour deposition process. It has an amorphous atomic structure, an ordered nanowire-based framework and random submicrometre voids, and shows an average Young’s modulus that is 2–3 orders of magnitude smaller than that of single-crystalline silicon. In addition, we used the heterogeneous silicon mesostructures to design a lipid-bilayer-supported bioelectric interface that is remotely controlled and temporally transient, and that permits non-genetic and subcellular optical modulation of the electrophysiology dynamics in single dorsal root ganglia neurons. Our findings suggest that the biomimetic expansion of silicon into heterogeneous and deformable forms can open up opportunities in extracellular biomaterial or bioelectric systems.

Light-Induced Degradation of Thin Film Silicon Solar Cells

International Nuclear Information System (INIS)

Hamelmann, F U; Weicht, J A; Behrens, G

2016-01-01

Silicon-wafer based solar cells are still domination the market for photovoltaic energy conversion. However, most of the silicon is used only for mechanical stability, while only a small percentage of the material is needed for the light absorption. Thin film silicon technology reduces the material demand to just some hundred nanometer thickness. But even in a tandem stack (amorphous and microcrystalline silicon) the efficiencies are lower, and light-induced degradation is an important issue. The established standard tests for characterisation are not precise enough to predict the performance of thin film silicon solar cells under real conditions, since many factors do have an influence on the degradation. We will show some results of laboratory and outdoor measurements that we are going to use as a base for advanced modelling and simulation methods. (paper)

Inorganic Glue Enabling High Performance of Silicon Particles as Lithium Ion Battery Anode

KAUST Repository

Cui, Li-Feng

2011-01-01

Silicon, as an alloy-type anode material, has recently attracted lots of attention because of its highest known Li+ storage capacity (4200 mAh/g). But lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Silicon nanostructures such as nanowires and nanotubes can overcome the pulverization problem, however these nano-engineered silicon anodes usually involve very expensive processes and have difficulty being applied in commercial lithium ion batteries. In this study, we report a novel method using amorphous silicon as inorganic glue replacing conventional polymer binder. This inorganic glue method can solve the loss of contact issue in conventional silicon particle anode and enables successful cycling of various sizes of silicon particles, both nano-particles and micron particles. With a limited capacity of 800 mAh/g, relatively large silicon micron-particles can be stably cycled over 200 cycles. The very cheap production of these silicon particle anodes makes our method promising and competitive in lithium ion battery industry. © 2011 The Electrochemical Society.

Neutron shielding material

International Nuclear Information System (INIS)

Nodaka, M.; Iida, T.; Taniuchi, H.; Yosimura, K.; Nagahama, H.

1993-01-01

From among the neutron shielding materials of the 'kobesh' series developed by Kobe Steel, Ltd. for transport and storage packagings, silicon rubber base type material has been tested for several items with a view to practical application and official authorization, and in order to determine its adaptability to actual vessels. Silicon rubber base type 'kobesh SR-T01' is a material in which, from among the silicone rubber based neutron shielding materials, the hydrogen content is highest and the boron content is most optimized. Its neutron shielding capability has been already described in the previous report (Taniuchi, 1986). The following tests were carried out to determine suitability for practical application; 1) Long-term thermal stability test 2) Pouring test on an actual-scale model 3) Fire test The experimental results showed that the silicone rubber based neutron shielding material has good neutron shielding capability and high long-term fire resistance, and that it can be applied to the advanced transport packaging. (author)

Advances in silicon nanophotonics

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Pu, Minhao

Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

Tin - an unlikely ally for silicon field effect transistors?

KAUST Repository

Hussain, Aftab M.

2014-01-13

We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low cost silicon-on-ceramic photovoltaic solar cells

Science.gov (United States)

Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

1980-01-01

A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

Science.gov (United States)

Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

2014-10-28

Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

Production of silicon carbide bodies

International Nuclear Information System (INIS)

Parkinson, K.

1981-01-01

A body consisting essentially of a coherent mixture of silicon carbide and carbon for subsequent siliconising is produced by casting a slip comprising silicon carbide and carbon powders in a porous mould. Part of the surface of the body, particularly internal features, is formed by providing within the mould a core of a material which retains its shape while casting is in progress but is compressed by shrinkage of the cast body as it dries and is thereafter removable from the cast body. Materials which are suitable for the core are expanded polystyrene and gelatinous products of selected low elastic modulus. (author)

The importance of silicon photovoltaic manufacturing in Saudi Arabia

International Nuclear Information System (INIS)

Elani, U.A.; Bagazi, S.A.

1998-01-01

In this paper, the potential of silicon development for photovoltaics will be discussed in conjunction with the availability of raw material and photovoltaic demand in Saudi Arabia. Recent studies suggest that silicon raw material for photovoltaic production should be considered for further investigation towards solar cells manufacturing in Saudi Arabia. (author)

Synthesis and Characterization of Silicon Nanoparticles Inserted into Graphene Sheets as High Performance Anode Material for Lithium Ion Batteries

Directory of Open Access Journals (Sweden)

Yong Chen

2014-01-01

Full Text Available Silicon nanoparticles have been successfully inserted into graphene sheets via a novel method combining freeze-drying and thermal reduction. The structure, electrochemical performance, and cycling stability of this anode material were characterized by SEM, X-ray diffraction (XRD, charge/discharge cycling, and cyclic voltammetry (CV. CV showed that the Si/graphene nanocomposite exhibits remarkably enhanced cycling performance and rate performance compared with bare Si nanoparticles for lithium ion batteries. XRD and SEM showed that silicon nanoparticles inserted into graphene sheets were homogeneous and had better layered structure than the bare silicon nanoparticles. Graphene sheets improved high rate discharge capacity and long cycle-life performance. The initial capacity of the Si nanoparticles/graphene keeps above 850 mAhg−1 after 100 cycles at a rate of 100 mAg−1. The excellent cycle performances are caused by the good structure of the composites, which ensured uniform electronic conducting sheet and intensified the cohesion force of binder and collector, respectively.

Inorganic Photovoltaics Materials and Devices: Past, Present, and Future

Science.gov (United States)

Hepp, Aloysius F.; Bailey, Sheila G.; Rafaelle, Ryne P.

2005-01-01

This report describes recent aspects of advanced inorganic materials for photovoltaics or solar cell applications. Specific materials examined will be high-efficiency silicon, gallium arsenide and related materials, and thin-film materials, particularly amorphous silicon and (polycrystalline) copper indium selenide. Some of the advanced concepts discussed include multi-junction III-V (and thin-film) devices, utilization of nanotechnology, specifically quantum dots, low-temperature chemical processing, polymer substrates for lightweight and low-cost solar arrays, concentrator cells, and integrated power devices. While many of these technologies will eventually be used for utility and consumer applications, their genesis can be traced back to challenging problems related to power generation for aerospace and defense. Because this overview of inorganic materials is included in a monogram focused on organic photovoltaics, fundamental issues and metrics common to all solar cell devices (and arrays) will be addressed.

The impact of silicon feedstock on the PV module cost

NARCIS (Netherlands)

del Coso, G.; del Cañizo, C.; Sinke, W.C.

2010-01-01

The impact of the use of new (solar grade) silicon feedstock materials on the manufacturing cost of wafer-based crystalline silicon photovoltaic modules is analyzed considering effects of material cost, efficiency of utilisation, and quality. Calculations based on data provided by European industry

15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

Energy Technology Data Exchange (ETDEWEB)

Sopori, B. L.

2005-11-01

The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing

Science.gov (United States)

De Biasio, M.; Kraft, M.; Schultz, M.; Goller, B.; Sternig, D.; Esteve, R.; Roesner, M.

2017-05-01

Silicon carbide (SiC) is a wide band-gap semi-conductor material that is used increasingly for high voltage power devices, since it has a higher breakdown field strength and better thermal conductivity than silicon. However, in particular its hardness makes wafer processing difficult and many standard semi-conductor processes have to be specially adapted. We measure the effects of (i) mechanical processing (i.e. grinding of the backside) and (ii) chemical and thermal processing (i.e. doping and annealing), using confocal microscopy to measure the surface roughness of ground wafers and micro-Raman spectroscopy to measure the stresses induced in the wafers by grinding. 4H-SiC wafers with different dopings were studied before and after annealing, using depth-resolved micro-Raman spectroscopy to observe how doping and annealing affect: i.) the damage and stresses induced on the crystalline structure of the samples and ii.) the concentration of free electrical carriers. Our results show that mechanical, chemical and thermal processing techniques have effects on this semiconductor material that can be observed and characterized using confocal microscopy and high resolution micro Raman spectroscopy.

Flexible Thermoelectric Generators on Silicon Fabric

KAUST Repository

Sevilla, Galo T.

2012-11-01

In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process, task 2. LSSA project

Science.gov (United States)

Duffy, M. T.; Berkman, S.; Moss, H. S.; Cullen, G. W.

1978-01-01

The results of emission spectroscopic analysis indicate that molten silicon can remain in contact with hot-pressed Si3N4 (99.2 percent theoretical density) for prolonged periods without attaining the impurity content level of the nitride. Although MgO was used as binder, Mg was not found present in the silicon sessile drop in quantities much above the level initially present in the silicon source material. Preliminary experiments with EFG-type dies coated with CVD Si3N4 or CVD SiOxNy indicate that capillary rise does not occur readily in these dies. The same was found to be true of hot-pressed and reaction-sintered Si3N4 obtained commercially. However, when dies were formed by depositing CVD layers on shaped silicon slabs, a column of molten silicon was maintained in each CVD die while being heated in contact with a crucible of molten silicon. Preliminary wetting of dies appears necessary for EFG growth. Several ribbon growth experiments were performed from V-shaped dies.

Floating Silicon Method

Energy Technology Data Exchange (ETDEWEB)

Kellerman, Peter

2013-12-21

The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

Geochemistry of the stable isotopes of silicon

Energy Technology Data Exchange (ETDEWEB)

Douthitt, C B [California Inst. of Tech., Pasadena (USA). Div. of Geological and Planetary Sciences

1982-08-01

One hundred thirty two new measurements of the relative abundances of the stable isotopes of silicon in terrestrial materials are presented. The total variation of delta/sup 30/Si found is 6.2 parts per thousand, centered on the mean of terrestrial mafic and ultramafic igneous rocks, delta/sup 30/Si = -0.4 parts per thousand. Igneous rocks show limited variation; coexisting minerals exhibit small, systematic silicon isotopic fractionations that are roughly 1/3 the magnitude of concomitant oxygen isotopic fractionations at 1150/sup 0/C. In both igneous minerals and rocks, delta/sup 30/Si shows a positive correlation with silicon content, as does delta/sup 18/O. Opal from both sponge spicules and sinters is light, with delta/sup 30/Si = -2.3 and -1.4 parts per thousand respectively. Large delta/sup 30/Si values of both positive and negative sign are reported for the first time from clay minerals, opaline phytoliths, and authigenic quartz. All highly fractionated samples were precipitated from solution at low temperatures; however, aqueous silicon is not measurably fractionated relative to quartz at equilibrium. A kinetic isotope fractionation of approximately 3.5 parts per thousand is postulated to occur during the low temperature precipitation of opal and, possibly, poorly ordered phyllosilicates, with the silicate phase being enriched in /sup 28/Si. This fractionation, coupled with a Rayleigh precipitation model, is capable of explaining most non-magmatic delta/sup 30/Si variations.

Rapid determination of main components by means of flame-atomic-absorption spectrometry for chromium, silicon and tungsten in CrSiW materials

International Nuclear Information System (INIS)

Mueller, E.; Stahlberg, R.

1985-01-01

The application of Flame-Atomic-Absorption Spectrometry (FAAS) for determining chromium, silicon and tungsten in CrSiW materials is described. The FAAS determinations of the main components are shown under optimum conditions. Sufficient precision and reliability have been achieved for routine analysis. The application of a mixture of acids for preparing CrSiW solutions is proposed. The preparation of samples is discussed in detail. Optimum conditions are recommended for determining chromium, silicon and tungsten using one solution only. (orig.) [de

Lamb wave propagation in monocrystalline silicon wafers

OpenAIRE

Fromme, P.; Pizzolato, M.; Robyr, J-L; Masserey, B.

2018-01-01

Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. Guided ultrasonic waves offer the potential to efficiently detect micro-cracks in the thin wafers. Previous studies of ultrasonic wave propagation in silicon focused on effects of material anisotropy on bulk ultrasonic waves, but the dependence of the wave propagation characteristics on the material anisotropy is not well understood for Lamb waves. The phase slowness a...

The geochemistry of the stable isotopes of silicon

International Nuclear Information System (INIS)

Douthitt, C.B.

1982-01-01

One hundred thirty two new measurements of the relative abundances of the stable isotopes of silicon in terrestrial materials are presented. The total variation of delta 30 Si found is 6.2 parts per thousand, centered on the mean of terrestrial mafic and ultramafic igneous rocks, delta 30 Si = -0.4 parts per thousand. Igneous rocks show limited variation; coexisting minerals exhibit small, systematic silicon isotopic fractionations that are roughly 1/3 the magnitude of concomitant oxygen isotopic fractionations at 1150 0 C. In both igneous minerals and rocks, delta 30 Si shows a positive correlation with silicon content, as does delta 18 O. Opal from both sponge spicules and sinters is light, with delta 30 Si = -2.3 and -1.4 parts per thousand respectively. Large delta 30 Si values of both positive and negative sign are reported for the first time from clay minerals, opaline phytoliths, and authigenic quartz. All highly fractionated samples were precipitated from solution at low temperatures; however, aqueous silicon is not measurably fractionated relative to quartz at equilibrium. A kinetic isotope fractionation of approximately 3.5 parts per thousand is postulated to occur during the low temperature precipitation of opal and, possibly, poorly ordered phyllosilicates, with the silicate phase being enriched in 28 Si. This fractionation, coupled with a Rayleigh precipitation model, is capable of explaining most non-magmatic delta 30 Si variations. (author)

The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

International Nuclear Information System (INIS)

Colder, H.; Marie, P.; Gourbilleau, F.

2008-01-01

Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

Rectangular-cladding silicon slot waveguide with improved nonlinear performance

Science.gov (United States)

Huang, Zengzhi; Huang, Qingzhong; Wang, Yi; Xia, Jinsong

2018-04-01

Silicon slot waveguides have great potential in hybrid silicon integration to realize nonlinear optical applications. We propose a rectangular-cladding hybrid silicon slot waveguide. Simulation result shows that, with a rectangular-cladding, the slot waveguide can be formed by narrower silicon strips, so the two-photon absorption (TPA) loss in silicon is decreased. When the cladding material is a nonlinear polymer, the calculated TPA figure of merit (FOMTPA) is 4.4, close to the value of bulk nonlinear polymer of 5.0. This value confirms the good nonlinear performance of rectangular-cladding silicon slot waveguides.

Hydrogen passivation of silicon sheet solar cells

International Nuclear Information System (INIS)

Tsuo, Y.S.; Milstein, J.B.

1984-01-01

Significant improvements in the efficiencies of dendritic web and edge-supported-pulling silicon sheet solar cells have been obtained after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. The silicon sputter rate for constant ion beam flux of 0.60 +- 0.05 mA/cm 2 exhibits a maximum at approximately 1400-eV ion beam energy

Silicon Qubits

Energy Technology Data Exchange (ETDEWEB)

Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2018-02-28

Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

High-performance lithium battery anodes using silicon nanowires.

Science.gov (United States)

Chan, Candace K; Peng, Hailin; Liu, Gao; McIlwrath, Kevin; Zhang, Xiao Feng; Huggins, Robert A; Cui, Yi

2008-01-01

There is great interest in developing rechargeable lithium batteries with higher energy capacity and longer cycle life for applications in portable electronic devices, electric vehicles and implantable medical devices. Silicon is an attractive anode material for lithium batteries because it has a low discharge potential and the highest known theoretical charge capacity (4,200 mAh g(-1); ref. 2). Although this is more than ten times higher than existing graphite anodes and much larger than various nitride and oxide materials, silicon anodes have limited applications because silicon's volume changes by 400% upon insertion and extraction of lithium which results in pulverization and capacity fading. Here, we show that silicon nanowire battery electrodes circumvent these issues as they can accommodate large strain without pulverization, provide good electronic contact and conduction, and display short lithium insertion distances. We achieved the theoretical charge capacity for silicon anodes and maintained a discharge capacity close to 75% of this maximum, with little fading during cycling.

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

Energy Technology Data Exchange (ETDEWEB)

Martini, R., E-mail: roberto.martini@imec.be [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Kepa, J.; Stesmans, A. [Department of Physics, KU Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium); Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Poortmans, J. [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Universiteit Hasselt, Martelarenlaan 42, B-3500 Hasselt (Belgium)

2014-10-27

We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

International Nuclear Information System (INIS)

Martini, R.; Kepa, J.; Stesmans, A.; Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I.; Poortmans, J.

2014-01-01

We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

Nonlinear silicon photonics

Science.gov (United States)

Tsia, Kevin K.; Jalali, Bahram

2010-05-01

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

Protein deposition on a lathe-cut silicone hydrogel contact lens material.

Science.gov (United States)

Subbaraman, Lakshman N; Woods, Jill; Teichroeb, Jonathan H; Jones, Lyndon

2009-03-01

To determine the quantity of total protein, total lysozyme, and the conformational state of lysozyme deposited on a novel, lathe-cut silicone hydrogel (SiHy) contact lens material (sifilcon A) after 3 months of wear. Twenty-four subjects completed a prospective, bilateral, daily-wear, 9-month clinical evaluation in which the subjects were fitted with a novel, custom-made, lathe-cut SiHy lens material. The lenses were worn for three consecutive 3-month periods, with lenses being replaced after each period of wear. After 3 months of wear, the lenses from the left eye were collected and assessed for protein analysis. The total protein deposited on the lenses was determined by a modified Bradford assay, total lysozyme using Western blotting and the lysozyme activity was determined using a modified micrococcal assay. The total protein recovered from the custom-made lenses was 5.3 +/- 2.3 microg/lens and the total lysozyme was 2.4 +/- 1.2 microg/lens. The denatured lysozyme found on the lenses was 1.9 +/- 1.0 microg/lens and the percentage of lysozyme denatured was 80 +/- 10%. Even after 3 months of wear, the quantity of protein and the conformational state of lysozyme deposited on these novel lens materials was very similar to that found on similar surface-coated SiHy lenses after 2 to 4 weeks of wear. These results indicate that extended use of the sifilcon A material is not deleterious in terms of the quantity and quality of protein deposited on the lens.

Optical properties of phosphorescent nano-silicon electrochemically doped with terbium

Energy Technology Data Exchange (ETDEWEB)

Gelloz, Bernard [Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Mentek, Romain; Koshida, Nobuyoshi [Tokyo University A and T, 2-24-16 Nakacho, Koganei, Tokyo 184-8588 (Japan)

2012-12-15

Hybrid thin films consisting of oxidized nano-silicon doped with terbium have been fabricated. Nano-silicon was formed by electrochemical etching of silicon wafers. Terbium was incorporated into nano-silicon pores by electrochemical deposition. Different oxidizing thermal treatments were applied to the films. The samples treated by high-pressure water vapor annealing (HWA) exhibited strong blue emission with a phosphorescent component, as previously reported by our group. The low temperature (260 C) HWA also led to strong emission from Tb{sup 3+} ions, whereas typical high temperature (900 C) treatment generally used to activate Tb{sup 3+} ions in silicon-based materials led to less luminescent samples. Spectroscopic and dynamic analyses suggest that terbium was incorporated as a separate oxide phase in the pores of the porous nano-silicon. The PL of the terbium phase and nano-silicon phase exhibit different temperature and excitation power dependences suggesting little optical or electronic interaction between the two phases. The luminescence of terbium is better activated at low temperature (260 C) than at high temperature (900 C). The hybrid material may find some applications in photonics, for instance as a display material. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Investigation of migration of organic silicone into stone and its prevention; Silicone kei dansei secchakuzai no seibun ga sekizaichu ni shinto suru gensho no kyumei to shinto taisaku

Energy Technology Data Exchange (ETDEWEB)

Nakayama, M.; Sasaki, M. [Kajima Construction Co. Ltd., Tokyo (Japan)

1998-07-30

Quantitative analyses of silicone migration into marble from elastic silicon adhesive were carried out by EPMA and LMA, and the amount of migrated silicone was calculated in terms of silicone concentration. By EPMA, silicone distribution into the area centering around the boundary between elastic adhesive and marble was clarified, and the migrating condition of silicone from elastic adhesive to marble was made clear. In the case of LMA, silicone concentration in micro-area in marble was measured to use the measured result for the succeeding analyses. As a result of the analysis, the trend of the change of silicone migration with the passage of time could be expressed by treating the silicone migration as diffusion phenomenon, and the depth of silicone migration could be quantified. It was confirmed that the cover primer applied at the back of marble to inhibit migration could prevent contamination of marble caused by silicone migration. The analytical method of this study seemed to be applicable to other stone materials or other adhesive and sealing materials. 14 refs., 12 figs., 2 tabs.

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Brett Hallam

2017-12-01

Full Text Available This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

Nanostructured silicon anodes for lithium ion rechargeable batteries.

Science.gov (United States)

Teki, Ranganath; Datta, Moni K; Krishnan, Rahul; Parker, Thomas C; Lu, Toh-Ming; Kumta, Prashant N; Koratkar, Nikhil

2009-10-01

Rechargeable lithium ion batteries are integral to today's information-rich, mobile society. Currently they are one of the most popular types of battery used in portable electronics because of their high energy density and flexible design. Despite their increasing use at the present time, there is great continued commercial interest in developing new and improved electrode materials for lithium ion batteries that would lead to dramatically higher energy capacity and longer cycle life. Silicon is one of the most promising anode materials because it has the highest known theoretical charge capacity and is the second most abundant element on earth. However, silicon anodes have limited applications because of the huge volume change associated with the insertion and extraction of lithium. This causes cracking and pulverization of the anode, which leads to a loss of electrical contact and eventual fading of capacity. Nanostructured silicon anodes, as compared to the previously tested silicon film anodes, can help overcome the above issues. As arrays of silicon nanowires or nanorods, which help accommodate the volume changes, or as nanoscale compliant layers, which increase the stress resilience of silicon films, nanoengineered silicon anodes show potential to enable a new generation of lithium ion batteries with significantly higher reversible charge capacity and longer cycle life.

Flexural strength of proof-tested and neutron-irradiated silicon carbide

Science.gov (United States)

Price, R. J.; Hopkins, G. R.

1982-08-01

Proof testing before service is a valuable method for ensuring the reliability of ceramic structures. Silicon carbide has been proposed as a very low activation first-wall and blanket structural material for fusion devices, where it would experience a high flux of fast neutrons. Strips of three types of silicon carbide were loaded in four-point bending to a stress sufficient to break about a third of the specimens. Groups of 16 survivors were irradiated to 2 × 10 26n/ m2 ( E>0.05 MeV) at 740°C and bend tested to failure. The strength distribution of chemically vapor-deposited silicon carbide (Texas Instruments) was virtually unchanged by irradiation. The mean strength of sintered silicon carbide (Carborundum Alpha) was reduced 34% by irradiation, while the Weibull modulus and the truncated strength distribution characteristic of proof-tested material were retained. Irradiation reduced the mean strength of reaction-bonded silicon carbide (Norton NC-430) by 58%, and the spread in strength values was increased. We conclude that for the chemically vapor-deposited and the sintered silicon carbide the benefits of proof testing to eliminate low strength material are retained after high neutron exposures.

Lighting emitting microstructures in porous silicon

International Nuclear Information System (INIS)

Squire, E.

1999-01-01

Experimental and theoretical techniques are used to examine microstructuring effects on the optical properties of single layer, multilayer, single and multiple microcavity structures fabricated from porous silicon. Two important issues regarding the effects of the periodic structuring of this material are discussed. Firstly, the precise role played by this microstructuring, given that the luminescence is distributed throughout the entire structure and the low porosity layers are highly absorbing at short wavelengths. The second issue examined concerns the observed effects on the optical spectra of the samples owing to the emission bandwidth of the material being greater than the optical stopband of the structure. Measurements of the reflectivity and photoluminescence spectra of different porous silicon microstructures are presented and discussed. The results are modelled using a transfer matrix technique. The matrix method has been modified to calculate the optical spectra of porous silicon specifically by accounting for the effects of dispersion, absorption and emission within the material. Layer thickness and porosity gradients have also been included in the model. The dielectric function of the two component layers (i.e. silicon and air) is calculated using the Looyenga formula. This approach can be adapted to suit other porous semiconductors if required. Examination of the experimental results have shown that the emitted light is strongly controlled by the optical modes of the structures. Furthermore, the data display an interplay of a wide variety of effects dependent upon the structural composition. Comparisons made between the experimental and calculated reflectivity and photoluminescence spectra of many different porous silicon microstructures show very good agreement. (author)

Silicon detectors operating beyond the LHC collider conditions: scenarios for radiation fields and detector degradation

International Nuclear Information System (INIS)

Lazanu, I.; Lazanu, S.

2004-01-01

Particle physics makes its greatest advances with experiments at the highest energies. The way to advance to a higher energy regime is through hadron colliders, or through non-accelerator experiments, as for example the space astroparticle missions. In the near future, the Large Hadron Collider (LHC) will be operational, and beyond that, its upgrades: the Super-LHC (SLHC) and the hypothetical Very Large Hadron Collider (VLHC). At the present time, there are no detailed studies for future accelerators, except those referring to LHC. For the new hadron collider LHC and some of its updates in luminosity and energy, the silicon detectors could represent an important option, especially for the tracking system and calorimetry. The main goal of this paper is to analyse the expected long-time degradation of the silicon as material and for silicon detectors, during continuous radiation, in these hostile conditions. The behaviour of silicon in relation to various scenarios for upgrade in energy and luminosity is discussed in the frame of a phenomenological model developed previously by the authors and now extended to include new mechanisms, able to explain and give solutions to discrepancies between model predictions and detector behaviour after hadron irradiation. Different silicon material parameters resulting from different technologies are considered to evaluate what materials are harder to radiation and consequently could minimise the degradation of device parameters in conditions of continuous long time operation. (authors)

Mechanochemical approaches to employ silicon as a lithium-ion battery anode

International Nuclear Information System (INIS)

Shimoi, Norihiro; Bahena-Garrido, Sharon; Tanaka, Yasumitsu; Qiwu, Zhang

2015-01-01

Silicon is essential as an active material in lithium-ion batteries because it provides both high-charge and optimal cycle characteristics. The authors attempted to realize a composite by a simple mechanochemical grinding approach of individual silicon (Si) particles and copper monoxide (CuO) particles to serve as an active material in the anode and optimize the charge-discharge characteristics of a lithium-ion battery. The composite with Si and CuO allowed for a homogenous dispersion with nano-scale Si grains, nano-scale copper-silicon alloy grains and silicon monoxide oxidized the oxide from CuO. The authors successfully achieved the synthesis of an active composite unites the structural features of an active material based on silicon composite as an anode in Li-ion battery with high capacity and cyclic reversible charge properties of 3256 mAh g −1 after 200 cycles

Excimer laser decomposition of silicone

International Nuclear Information System (INIS)

Laude, L.D.; Cochrane, C.; Dicara, Cl.; Dupas-Bruzek, C.; Kolev, K.

2003-01-01

Excimer laser irradiation of silicone foils is shown in this work to induce decomposition, ablation and activation of such materials. Thin (100 μm) laminated silicone foils are irradiated at 248 nm as a function of impacting laser fluence and number of pulsed irradiations at 1 s intervals. Above a threshold fluence of 0.7 J/cm 2 , material starts decomposing. At higher fluences, this decomposition develops and gives rise to (i) swelling of the irradiated surface and then (ii) emission of matter (ablation) at a rate that is not proportioned to the number of pulses. Taking into consideration the polymer structure and the foil lamination process, these results help defining the phenomenology of silicone ablation. The polymer decomposition results in two parts: one which is organic and volatile, and another part which is inorganic and remains, forming an ever thickening screen to light penetration as the number of light pulses increases. A mathematical model is developed that accounts successfully for this physical screening effect

RBS and XRD analysis of silicon doped titanium diboride films

International Nuclear Information System (INIS)

Mollica, S.; Sood, D.K.; Ghantasala, M.K.; Kothari, R.

1999-01-01

Titanium diboride is a newly developed material suitable for protective coatings. Its high temperature oxidation resistance at temperatures of 700 deg C and beyond is limited due to its poor oxidative behaviour. This paper presents a novel approach to improving the coatings' oxidative characteristics at temperatures of 700 deg C by doping with silicon. Titanium diboride films were deposited onto Si(100) wafer substrates using a DC magnetron sputtering system. Films were deposited in two different compositions, one at pure TiB 2 and the other with 20 % Si doping. These samples were vacuum annealed at 700 deg C at 1x10 -6 Torr to investigate the anaerobic behaviour of the material at elevated temperatures and to ensure that they were crystalline. Samples were then oxidised in air at 700 deg C to investigate their oxidation resistance. Annealing the films at 700 deg C in air results in the oxidation of the film as titanium and boron form TiO 2 and B 2 O 3 . Annealing is seen to produce only minor changes in the films. There is some silicon diffusion from the substrate at elevated temperatures, which is related to the porous nature of the deposited film and the high temperature heat treatments. However, silicon doped films showed relatively less oxidation characteristics after annealing in air compared with the pure TiB 2 samples

Case Report: Magnetically retained silicone facial prosthesis ...

African Journals Online (AJOL)

Prosthetic camouflaging of facial defects and use of silicone maxillofacial material are the alternatives to the surgical retreatment. Silicone elastomers provide more options to clinician for customization of the facial prosthesis which is simple, esthetically good when coupled with bio magnets for retention. Key words: Magnet ...

Subwavelength silicon photonics

International Nuclear Information System (INIS)

Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

2011-01-01

With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

Silicon-based sleeve devices for chemical reactions

Science.gov (United States)

Northrup, M. Allen; Mariella, Jr., Raymond P.; Carrano, Anthony V.; Balch, Joseph W.

1996-01-01

A silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

Flexible integration of free-standing nanowires into silicon photonics.

Science.gov (United States)

Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

2017-06-14

Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

Achievement Report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Development of silicon mass-production manufacturing technology for solar cells; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

In order to manufacture silicon for solar cells, development is intended on a technology to manufacture silicon (SOG-Si) for solar cells by means of metallurgical methods using metallic silicon with purity generally available as an interim starting material. The silicon is required of p-type electric conductivity characteristics with specific resistance of 0.5 to 1.5 ohm per cm, to be sufficient even with 6-7N as compared to silicon for semiconductors (11-N), and to be low in cost. While the NEDO fluid bed process and the metallurgical NEDO direct reduction process have been developed based on the technology to manufacture silicon for semiconductors, the basic policy was established to develop a new manufacturing method using commercially available high-purity metallic silicon as an interim starting material, with an objective to achieve cost as low as capable of responding to small-quantity phase production for proliferation purpose. Removal of boron and phosphor has been the main issue in the development, whereas SOG-Si was manufactured in a laboratory scale by combining with the conventional component technologies in fiscal 1991 and 1992. The scale was expanded to 20 kg since fiscal 1993, and a five year plan starting fiscal 1996 was decided to develop the technology for industrial scale. Fiscal 1997 has promoted the development by using the 20-kg scale device, and introduced facilities to develop technology for mass-production scale. (NEDO)

3D printing PLA and silicone elastomer structures with sugar solution support material

Science.gov (United States)

Hamidi, Armita; Jain, Shrenik; Tadesse, Yonas

2017-04-01

3D printing technology has been used for rapid prototyping since 1980's and is still developing in a way that can be used for customized products with complex design and miniature features. Among all the available 3D printing techniques, Fused Deposition Modeling (FDM) is one of the most widely used technologies because of its capability to build different structures by employing various materials. However, complexity of parts made by FDM is greatly limited by restriction of using support materials. Support materials are often used in FDM for several complex geometries such as fully suspended shapes, overhanging surfaces and hollow features. This paper describes an approach to 3D print a structure using silicone elastomer and polylactide fiber (PLA) by employing a novel support material that is soluble in water. This support material is melted sugar which can easily be prepared at a low cost. Sugar is a carbohydrate, which is found naturally in plants such as sugarcane and sugar beets; therefore, it is completely organic and eco-friendly. As another advantage, the time for removing this material from the part is considerably less than other commercially available support materials and it can be removed easily by warm water without leaving any trace. Experiments were done using an inexpensive desktop 3D printer to fabricate complex structures for use in soft robots. The results envision that further development of this system would contribute to a method of fabrication of complex parts with lower cost yet high quality.

Silicon spintronics: Progress and challenges

Energy Technology Data Exchange (ETDEWEB)

Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

2015-07-14

Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

Silicon spintronics: Progress and challenges

International Nuclear Information System (INIS)

Sverdlov, Viktor; Selberherr, Siegfried

2015-01-01

Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized

Electron spin resonance investigaton of semiconductor materials for application in thin-film silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Xiao, Lihong

2012-07-01

In the present work, hydrogenated silicon and its alloys silicon carbide and silicon oxide have been investigated using electron spin resonance (ESR). The microstructure of these materials ranges from highly crystalline to amorphous. The correlation between the paramagnetic defects, microstructure, optical and electrical properties has been discussed. Correspondingly, these properties were characterized by the spin density (N{sub S}), g-value and the lineshape of ESR spectra, Infrared (I{sup IR}{sub C}) and/or Raman crystallinity (I{sup RS}{sub C}) as well as optical absorption and electrical dark conductivity ({sigma}{sub D}). 1. As the light absorber, Si layers essentially should have low defect density and good stability against light exposure. The spin density (N{sub S}) measured by ESR is often used as a measure for the paramagnetic defect density (N{sub D}) in the material. However, ESR sample preparation procedures can potentially cause discrepancy between N{sub S} and N{sub D}. Using Mo-foil, Al-foil and ZnO:Al-covered glass as sacrificial substrates, {mu}c-Si:H and a-Si:H films were deposited by plasma-enhanced chemical vapor deposition (PECVD), and ESR powder samples have been prepared with corresponding procedures. Possible preparation-related metastability and instability effects have been investigated in terms of substrate dependence, HCl-etching and atmosphere exposure. A sequence of 'preparation - annealing - air-exposure - annealing' has been designed to investigate the metastability and instability effects. N{sub S} after post-preparation air exposure is higher than in the annealed states, especially for the highly crystalline {mu}c-Si:H material the discrepancy reached one order of magnitude. Low temperature ESR measurements at 40 K indicated that atmospheric exposure leads to a redistribution of the defect states which in turn influence the evaluated N{sub S}. In annealed conditions the samples tend to have lower N{sub S} presumably due

Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

Science.gov (United States)

1981-01-01

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

KAUST Repository

Bahabry, Rabab R.

2017-11-30

The solar cells market has an annual growth of more than 30 percent over the past 15 years. At the same time, the cost of the solar modules diminished to meet both of the rapid global demand and the technological improvements. In particular for the crystalline silicon solar cells, the workhorse of this technology. The objective of this doctoral thesis is enhancing the efficiency of c-Si solar cells while exploring the cost reduction via innovative techniques. Contact metallization and ultra-flexible wafer based c-Si solar cells are the main areas under investigation. First, Silicon-based solar cells typically utilize screen printed Silver (Ag) metal contacts which affect the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used for the front contact grid lines. In this work, investigation of the microstructure and the electrical characteristics of nickel monosilicide (NiSi) ohmic contacts on the rear side of c-Si solar cells has been carried out. Significant enhancement in the fill factor leading to increasing the total power conversion efficiency is observed. Second, advanced classes of modern application require a new generation of versatile solar cells showcasing extreme mechanical resilience. However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption with less active Si material. Here, a complementary metal oxide semiconductor (CMOS) technology based integration strategy is designed where corrugation architecture to enable an ultra-flexible solar cell module from bulk mono-crystalline silicon solar wafer with 17% efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness and achieves flexibility via interdigitated back contacts. These cells

APPLIED OPTICS. Voltage-tunable circular photogalvanic effect in silicon nanowires.

Science.gov (United States)

Dhara, Sajal; Mele, Eugene J; Agarwal, Ritesh

2015-08-14

Electronic bands in crystals can support nontrivial topological textures arising from spin-orbit interactions, but purely orbital mechanisms can realize closely related dynamics without breaking spin degeneracies, opening up applications in materials containing only light elements. One such application is the circular photogalvanic effect (CPGE), which is the generation of photocurrents whose magnitude and polarity depend on the chirality of optical excitation. We show that the CPGE can arise from interband transitions at the metal contacts to silicon nanowires, where inversion symmetry is locally broken by an electric field. Bias voltage that modulates this field further controls the sign and magnitude of the CPGE. The generation of chirality-dependent photocurrents in silicon with a purely orbital-based mechanism will enable new functionalities in silicon that can be integrated with conventional electronics. Copyright © 2015, American Association for the Advancement of Science.

Tin (Sn) - An Unlikely Ally to Extend Moore's Law for Silicon CMOS?

KAUST Repository

Hussain, Aftab M.

2012-12-01

There has been an exponential increase in the performance of silicon based semiconductor devices in the past few decades. This improvement has mainly been due to dimensional scaling of the MOSFET. However, physical constraints limit the continued growth in device performance. To overcome this problem, novel channel materials are being developed to enhance carrier mobility and hence increase device performance. This work explores a novel semiconducting alloy - Silicon-tin (SiSn) as a channel material for CMOS applications. For the first time ever, MOS devices using SiSn as channel material have been demonstrated. A low cost, scalable and manufacturable process for obtaining SiSn by diffusion of Sn into silicon has also been explored. The channel material thus obtained is electrically characterized by fabricating MOSCAPs and Mesa-shaped MOSFETs. The SiSn devices have been compared to similar devices fabricated using silicon as channel material.

The Impact of Metallic Impurities on Minority Carrier Lifetime in High Purity N-type Silicon

Science.gov (United States)

Yoon, Yohan

Boron-doped p-type silicon is the industry standard silicon solar cell substrate. However, it has serious limitations: iron boron (Fe-B) pairs and light induced degradation (LID). To suppress LID, the replacement of boron by gallium as a p-type dopant has been proposed. Although this eliminates B-O related defects, gallium-related pairing with iron, oxygen, and carbon can reduce lifetime in this material. In addition resistivity variations are more pronounced in gallium doped ingots, however Continuous-Czochralski (c-Cz) growth technologies are being developed to overcome this problem. In this work lifetime limiting factors and resistivity variations have been investigated in this material. The radial and axial variations of electrically active defects were observed using deep level transient spectroscopy (DLTS) these have been correlated to lifetime and resistivity variations. The DLTS measurements demonstrated that iron-related pairs are responsible for the lifetime variations. Specifically, Fe-Ga pairs were found to be important recombination sites and are more detrimental to lifetime than Fei. Typically n-type silicon has a higher minority carrier lifetime than p-type silicon with similar levels of contamination. That is because n-type silicon is more tolerant to metallic impurities, especially Fe. Also, it has no serious issues in relation to lifetime degradation, such as FeB pairs and light-induced degradation (LID). However, surface passivation of the p + region in p+n solar cells is much more problematic than the n+p case where silicon nitride provides very effective passivation of the cell. SiO2 is the most effective passivation for n type surfaces, but it does not work well on B-doped surfaces, resulting in inadequate performance. Al2O3 passivation layer suggested for B-doped emitters. With this surface passivation layer a 23.2 % conversion efficiency has been achieved. After this discovery n-type silicon is now being seriously considered for

Battery, especially for portable devices, has an anode containing silicon

NARCIS (Netherlands)

Kan, S.Y.

2002-01-01

The anode (2) contains silicon. A battery with a silicon-containing anode is claimed. An Independent claim is also included for a method used to make the battery, comprising the doping of a silicon substrate (1) with charge capacity-increasing material (preferably boron, phosphorous or arsenic),

The rate-limiting mechanism of transition metal gettering in multicrystalline silicon

International Nuclear Information System (INIS)

McHugo, S.A.; Thompson, A.C.; Imaizumi, M.

1997-01-01

Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of this research is to determine the mechanism by which gettering is ineffectual on these high recombination regions. The authors have performed studies on integrated circuit (IC) quality single crystal and multicrystalline solar cell silicon (mc-silicon) in the as-grown state and after a variety of processing/gettering steps. With Surface Photovoltage measurements of the minority carrier diffusion length which is inversely proportional to carrier recombination, they have seen that aluminum gettering is effective for improving IC quality material but ineffective for improving the regions of initially low diffusion lengths (high recombination rates) in mc-silicon. Of particular interest is the great increase in diffusion length for IC material as compared to the mc-silicon. Clearly the IC material has benefited to a greater extent from the gettering procedure than the mc-silicon

Self-organized, effective medium black silicon antireflection structures for silicon optics in the mid-infrared

Science.gov (United States)

Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

2016-09-01

Thanks to its high quality and low cost, silicon is the material of choice for optical devices operating in the mid-infrared (MIR; 2 μm to 6 μm wavelength). Unfortunately in this spectral region, the refractive index is comparably high (about 3.5) and leads to severe reflection losses of about 30% per interface. In this work, we demonstrate that self-organized, statistical Black Silicon structures, fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE), can be used to effectively suppress interface reflection. More importantly, it is shown that antireflection can be achieved in an image-preserving, non-scattering way. This enables Black Silicon antireflection structures (ARS) for imaging applications in the MIR. It is demonstrated that specular transmittances of 97% can be easily achieved on both flat and curved substrates, e.g. lenses. Moreover, by a combined optical and morphological analysis of a multitude of different Black Silicon ARS, an effective medium criterion for the examined structures is derived that can also be used as a design rule for maximizing sample transmittance in a desired wavelength range. In addition, we show that the mechanical durability of the structures can be greatly enhanced by coating with hard dielectric materials like diamond-like carbon (DLC), hence enabling practical applications. Finally, the distinct advantages of statistical Black Silicon ARS over conventional AR layer stacks are discussed: simple applicability to topological substrates, absence of thermal stress and cost-effectiveness.

Aluminum and silicon based phase change materials for high capacity thermal energy storage

International Nuclear Information System (INIS)

Wang, Zhengyun; Wang, Hui; Li, Xiaobo; Wang, Dezhi; Zhang, Qinyong; Chen, Gang; Ren, Zhifeng

2015-01-01

Six compositions of aluminum (Al) and silicon (Si) based materials: 87.8Al-12.2Si, 80Al–20Si, 70Al–30Si, 60Al–40Si, 45Al–40Si–15Fe, and 17Al–53Si–30Ni (atomic ratio), were investigated for potentially high thermal energy storage (TES) application from medium to high temperatures (550–1200 °C) through solid–liquid phase change. Thermal properties such as melting point, latent heat, specific heat, thermal diffusivity and thermal conductivity were investigated by differential scanning calorimetry and laser flash apparatus. The results reveal that the thermal storage capacity of the Al–Si materials increases with increasing Si concentration. The melting point and latent heat of 45Al–40Si–15Fe and 17Al–53Si–30Ni are ∼869 °C and ∼562 J g −1 , and ∼1079 °C and ∼960 J g −1 , respectively. The measured thermal conductivity of Al–Si binary materials depend on Si concentration and is higher than 80 W m −1  K −1 from room temperature to 500 °C, which is almost two orders of magnitude higher than those of salts that are commonly used phase change material for thermal energy storage. - Highlights: • Six kinds of materials were investigated for thermal energy storage (550–1200 °C). • Partial melting of Al–Si materials show progressively changing temperatures. • Studied materials can be used in three different working temperature ranges. • Materials are potentially good candidates for thermal energy storage applications.

Simple processing of high efficiency silicon solar cells

International Nuclear Information System (INIS)

Hamammu, I.M.; Ibrahim, K.

2006-01-01

Cost effective photovoltaic devices have been an area research since the development of the first solar cells, as cost is the major factor in their usage. Silicon solar cells have the biggest share in the photovoltaic market, though silicon os not the optimal material for solar cells. This work introduces a simplified approach for high efficiency silicon solar cell processing, by minimizing the processing steps and thereby reducing cost. The suggested procedure might also allow for the usage of lower quality materials compared to the one used today. The main features of the present work fall into: simplifying the diffusion process, edge shunt isolation and using acidic texturing instead of the standard alkaline processing. Solar cells of 17% efficiency have been produced using this procedure. Investigations on the possibility of improving the efficiency and using less quality material are still underway

A review of oxide, silicon nitride, and silicon carbide brazing

International Nuclear Information System (INIS)

Santella, M.L.; Moorhead, A.J.

1987-01-01

There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

Method of making thermally-isolated silicon-based integrated circuits

Science.gov (United States)

Wojciechowski, Kenneth; Olsson, Roy; Clews, Peggy J.; Bauer, Todd

2017-11-21

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials

Science.gov (United States)

Kaiser, Natalie; Croell, Arne; Szofran, F. R.; Cobb. S. D.; Dold, P.; Benz, K. W.

1999-01-01

During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.

Terahertz optical-Hall effect for multiple valley band materials: n-type silicon

International Nuclear Information System (INIS)

Kuehne, P.; Hofmann, T.; Herzinger, C.M.; Schubert, M.

2011-01-01

The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial anisotropy. In this work we employ the optical-Hall effect at terahertz frequencies for analysis of free-charge carrier properties in multiple valley band materials, for which the optical free-charge carrier contributions originate from multiple Brillouin-zone conduction or valence band minima or maxima, respectively. We investigate exemplarily the room temperature optical-Hall effect in low phosphorous-doped n-type silicon where free electrons are located in six equivalent conduction-band minima near the X-point. We simultaneously determine their free-charge carrier concentration, mobility, and longitudinal and transverse effective mass parameters.

Electricity from photovoltaic solar cells: Flat-Plate Solar Array Project final Report. Volume II: Silicon material

OpenAIRE

Lutwack, R.

1986-01-01

The Flat-Plate Solar Array (FSA) Project, funded by the U.S. Government and managed by the Jet Propulsion Laboratory, was formed in 1975 to develop the module/array technology needed to attain widespread terrestrial use of photovoltaics by 1985. To accomplish this, the FSA Project established and managed an Industry, University, and Federal Government Team to perform the needed research and development. The goal of the Silicon Material Task, a part of the FSA Project, was to develop and ...

Particulate-free porous silicon networks for efficient capacitive deionization water desalination.

Science.gov (United States)

Metke, Thomas; Westover, Andrew S; Carter, Rachel; Oakes, Landon; Douglas, Anna; Pint, Cary L

2016-04-22

Energy efficient water desalination processes employing low-cost and earth-abundant materials is a critical step to sustainably manage future human needs for clean water resources. Here we demonstrate that porous silicon - a material harnessing earth abundance, cost, and environmental/biological compatibility is a candidate material for water desalination. With appropriate surface passivation of the porous silicon material to prevent surface corrosion in aqueous environments, we show that porous silicon templates can enable salt removal in capacitive deionization (CDI) ranging from 0.36% by mass at the onset from fresh to brackish water (10 mM, or 0.06% salinity) to 0.52% in ocean water salt concentrations (500 mM, or ~0.3% salinity). This is on par with reports of most carbon nanomaterial based CDI systems based on particulate electrodes and covers the full salinity range required of a CDI system with a total ocean-to-fresh water required energy input of ~1.45 Wh/L. The use of porous silicon for CDI enables new routes to directly couple water desalination technology with microfluidic systems and photovoltaics that natively use silicon materials, while mitigating adverse effects of water contamination occurring from nanoparticulate-based CDI electrodes.

Particulate-free porous silicon networks for efficient capacitive deionization water desalination

Science.gov (United States)

Metke, Thomas; Westover, Andrew S.; Carter, Rachel; Oakes, Landon; Douglas, Anna; Pint, Cary L.

2016-01-01

Energy efficient water desalination processes employing low-cost and earth-abundant materials is a critical step to sustainably manage future human needs for clean water resources. Here we demonstrate that porous silicon – a material harnessing earth abundance, cost, and environmental/biological compatibility is a candidate material for water desalination. With appropriate surface passivation of the porous silicon material to prevent surface corrosion in aqueous environments, we show that porous silicon templates can enable salt removal in capacitive deionization (CDI) ranging from 0.36% by mass at the onset from fresh to brackish water (10 mM, or 0.06% salinity) to 0.52% in ocean water salt concentrations (500 mM, or ~0.3% salinity). This is on par with reports of most carbon nanomaterial based CDI systems based on particulate electrodes and covers the full salinity range required of a CDI system with a total ocean-to-fresh water required energy input of ~1.45 Wh/L. The use of porous silicon for CDI enables new routes to directly couple water desalination technology with microfluidic systems and photovoltaics that natively use silicon materials, while mitigating adverse effects of water contamination occurring from nanoparticulate-based CDI electrodes. PMID:27101809

Method of fabricating porous silicon carbide (SiC)

Science.gov (United States)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1995-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Fast determination of impurities in metallurgical grade silicon for photovoltaics by instrumental neutron activation analysis

International Nuclear Information System (INIS)

Hampel, J.; Boldt, F.M.; Gerstenberg, H.; Hampel, G.; Kratz, J.V.; Reber, S.; Wiehl, N.

2011-01-01

Standard wafer solar cells are made of near-semiconductor quality silicon. This high quality material makes up a significant part of the total costs of a solar module. Therefore, new concepts with less expensive so called solar grade silicon directly based on physiochemically upgraded metallurgical grade silicon are investigated. Metallurgical grade silicon contains large amounts of impurities, mainly transition metals like Fe, Cr, Mn, and Co, which degrade the minority carrier lifetime and thus the solar cell efficiency. A major reduction of the transition metal content occurs during the unidirectional crystallization due to the low segregation coefficient between the solid and liquid phase. A further reduction of the impurity level has to be done by gettering procedures applied to the silicon wafers. The efficiency of such cleaning procedures of metallurgical grade silicon is studied by instrumental neutron activation analysis (INAA). Small sized silicon wafers of approximately 200 mg with and without gettering step were analyzed. To accelerate the detection of transition metals in a crystallized silicon ingot, experiments of scanning whole vertical silicon columns with a diameter of approximately 1 cm by gamma spectroscopy were carried out. It was demonstrated that impurity profiles can be obtained in a comparably short time. Relatively constant transition metal ratios were found throughout an entire silicon ingot. This led to the conclusion that the determination of several metal profiles might be possible by the detection of only one 'leading element'. As the determination of Mn in silicon can be done quite fast compared to elements like Fe, Cr, and Co, it could be used as a rough marker for the overall metal concentration level. Thus, a fast way to determine impurities in photovoltaic silicon material is demonstrated. - Highlights: → We demonstrate a fast way to determine impurities in photovoltaic silicon by NAA. → We make first experiments of locally

Fabrication and Characterisation of Silicon Waveguides for High-Speed Optical Signal Processing

DEFF Research Database (Denmark)

Jensen, Asger Sellerup

This Ph.D. thesis treats various aspects of silicon photonics. From the limitations of silicon as a linear and nonlinear waveguide medium to its synergy with other waveguide materials. Various methods for reducing sidewall roughness and line edge roughness of silicon waveguides are attempted...... was too high for any practical applications. It is speculated that the attempt at creating a material with low density of dangling bonds was unsuccessful. Nevertheless, linear losses of 2.4dB/cm at 1550nm wavelength in the silicon waveguides remained sufficiently low that high speed nonlinear optical...

Carbon related defects in irradiated silicon revisited

KAUST Repository

Wang, H.

2014-05-09

Electronic structure calculations employing hybrid functionals are used to gain insight into the interaction of carbon (C) atoms, oxygen (O) interstitials, and self-interstitials in silicon (Si). We calculate the formation energies of the C related defects Ci (SiI), Ci O i, Ci Cs, and Ci Oi (SiI) with respect to the Fermi energy for all possible charge states. The Ci (SiL) 2+ state dominates in almost the whole Fermi energy range. The unpaired electron in the Ci O i + state is mainly localized on the C interstitial so that spin polarization is able to lower the total energy. The three known atomic configurations of the Ci Cs pair are reproduced and it is demonstrated that hybrid functionals yield an improved energetic order for both the A and B-types as compared to previous theoretical studies. Different structures of the Ci Oi (SiL) cluster result for positive charge states in dramatically distinct electronic states around the Fermi energy and formation energies.

Carbon related defects in irradiated silicon revisited

KAUST Repository

Wang, H.; Chroneos, A.; Londos, C.A.; Sgourou, E.N.; Schwingenschlö gl, Udo

2014-01-01

Electronic structure calculations employing hybrid functionals are used to gain insight into the interaction of carbon (C) atoms, oxygen (O) interstitials, and self-interstitials in silicon (Si). We calculate the formation energies of the C related defects Ci (SiI), Ci O i, Ci Cs, and Ci Oi (SiI) with respect to the Fermi energy for all possible charge states. The Ci (SiL) 2+ state dominates in almost the whole Fermi energy range. The unpaired electron in the Ci O i + state is mainly localized on the C interstitial so that spin polarization is able to lower the total energy. The three known atomic configurations of the Ci Cs pair are reproduced and it is demonstrated that hybrid functionals yield an improved energetic order for both the A and B-types as compared to previous theoretical studies. Different structures of the Ci Oi (SiL) cluster result for positive charge states in dramatically distinct electronic states around the Fermi energy and formation energies.

Hole Injection at the Silicon/Aqueous Electrolyte Interface: A Possible Mechanism for Chemiluminescence from Porous Silicon

NARCIS (Netherlands)

Kooij, Ernst S.; Butter, K.; Kelly, J.J.

1998-01-01

The reduction mechanism of oxidizing agents at silicon and porous silicon electrodes has been investigated in relation to light emission from the porous semiconductor. Oxidizing agents with a positive redox potential are shown to inject holes into HF-pretreated silicon. However, as the degree of

Low-temperature synthesis of silicon carbide powder using shungite

International Nuclear Information System (INIS)

Gubernat, A.; Pichor, W.; Lach, R.; Zientara, D.; Sitarz, M.; Springwald, M.

2017-01-01

The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600°C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500°C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders. (Author)

Low-temperature synthesis of silicon carbide powder using shungite

Energy Technology Data Exchange (ETDEWEB)

Gubernat, A.; Pichor, W.; Lach, R.; Zientara, D.; Sitarz, M.; Springwald, M.

2017-07-01

The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600°C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500°C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders. (Author)

X-ray excited optical luminescence (XEOL) and its application to porous silicon

International Nuclear Information System (INIS)

Hill, D.A.

1998-09-01

X-ray Excited Optical Luminescence (XEOL) is investigated as a local structural probe of the light-emitting sites in porous silicon. A detailed microscopic model of the XEOL process in porous silicon is proposed. A central aspect of the technique is an assessment of the spatial separation between the primary photoionisation event and subsequent optical radiative recombination. By constructing a Monte Carlo simulation of hot electron propagation in silicon using both elastic and inelastic scattering cross-sections, the mean minimum range of luminescence excitation can be calculated. This range is estimated as 546±1A for the silicon K-edge (∼ 1839eV), but is reduced to 8.9±0.1A for the silicon L 2,3 -edge (∼ 99eV). From known porous silicon properties, it is concluded that this mean minimum range is comparable to the actual range of excitation. Hence, more localised structural information may be obtained from L 2,3 -edge XEOL measurements. This important difference between the two spectra has been neglected in previous studies. Simultaneous measurements of the XEOL and total electron yield (TEY) x-ray absorption spectra (XAS) have been conducted at both the silicon K-edge and L 2,3 -edge for various porous silicon samples and related materials. Measurements have been conducted at the Si K-edge on a rapid thermally oxidised (RTO) porous silicon sample. XEOL spectra yield two distinct luminescence bands in the visible region. From multi-bunch wavelength-selective XEOL measurements, it is concluded that there are blue luminescent defective silica sites together with a red luminescent site originating from silicon-like material. The spectral time decay curve under pulsed x-ray excitation gives two distinct decay components; one fast in the range of a few nanoseconds and the other slow in the range of microseconds. Time-resolved XEOL measurements in single-bunch mode show that the fast band mirrors the blue wavelength XEOL whereas the slow band correlates with the

TEM investigation of aluminium containing precipitates in high aluminium doped silicon carbide

International Nuclear Information System (INIS)

Wong-Leung, J.; FitzGerald, J.D.

2002-01-01

Full text: Silicon carbide is a promising semiconductor material for applications in high temperature and high power devices. The successful growth of good quality epilayers in this material has enhanced its potential for device applications. As a novel semiconductor material, there is a need for studying its basic physical properties and the role of dopants in this material. In this study, silicon carbide epilayers were grown on 4H-SiC wafers of (0001) orientation with a miscut angle of 8 deg at a temperature of 1550 deg C. The epilayers contained regions of high aluminium doping well above the solubility of aluminium in silicon carbide. High temperature annealing of this material resulted in the precipitation of aluminium in the wafers. The samples were analysed by secondary ion mass spectrometry and transmission electron microscopy. Selected area diffraction studies show the presence of aluminium carbide and aluminium silicon carbide phases. Copyright (2002) Australian Society for Electron Microscopy Inc

Silicon Tracker Design for the ILC

International Nuclear Information System (INIS)

Nelson, T.; SLAC

2005-01-01

The task of tracking charged particles in energy frontier collider experiments has been largely taken over by solid-state detectors. While silicon microstrip trackers offer many advantages in this environment, large silicon trackers are generally much more massive than their gaseous counterparts. Because of the properties of the machine itself, much of the material that comprises a typical silicon microstrip tracker can be eliminated from a design for the ILC. This realization is the inspiration for a tracker design using lightweight, short, mass-producible modules to tile closed, nested cylinders with silicon microstrips. This design relies upon a few key technologies to provide excellent performance with low cost and complexity. The details of this concept are discussed, along with the performance and status of the design effort

High frequency guided wave propagation in monocrystalline silicon wafers

Science.gov (United States)

Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

2017-04-01

Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full three-dimensional Finite Element simulations of the guided wave propagation were conducted to visualize and quantify these effects for a line source. The phase velocity (slowness) and skew angle of the two fundamental Lamb wave modes (first anti-symmetric mode A0 and first symmetric mode S0) for varying propagation directions relative to the crystal orientation were measured experimentally. Selective mode excitation was achieved using a contact piezoelectric transducer with a custom-made wedge and holder to achieve a controlled contact pressure. The out-of-plane component of the guided wave propagation was measured using a noncontact laser interferometer. Good agreement was found with the simulation results and theoretical predictions based on nominal material properties of the silicon wafer.

Fiscal 1993 R and D project for industrial science and technology. Report on results in developing methane-fueled aircraft engine (R and D on silicon-based polymeric material); 1993 nendo methane nenryo kokukiyo engine kaihatsu seika hokokusho. Keisokei kobunshi zairyo no gijutsu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1994-03-01

R and D was conducted on silicon-based polymeric materials for structural use, for the purpose of establishing fundamental technologies such as molecular design, synthesis, material forming and evaluation method concerning silicon-based polymers, with the fiscal 1993 results summarized. In the studies of synthesis technologies of silicon-based polymeric materials having a sea-island structure, a series of polymers with an Si-C main chain structure were prepared by ring-opening polymerization of the cyclic monomers. In the studies of interpenetrating polymer network (IPN) structure forming technologies, polycarbosilanes with superior thermal stability and solvent solubility were synthesized through structural control based on molecular design. In the studies of composite structural materials between organic metallic complex and silicon-based high polymer, the compounding was carried out by introducing or blending organic metallic complex into the main chain of silicon polymer, with evaluation made on the heat resistance. The studies of silicon polymer structural materials having a ring structure were conducted on high heat resistant polymers that were obtained by dehydrocoupling polymerization with magnesia as a catalyst. (NEDO)

Silicon: the evolution of its use in biomaterials.

Science.gov (United States)

Henstock, J R; Canham, L T; Anderson, S I

2015-01-01

In the 1970s, several studies revealed the requirement for silicon in bone development, while bioactive silicate glasses simultaneously pioneered the current era of bioactive materials. Considerable research has subsequently focused on the chemistry and biological function of silicon in bone, demonstrating that the element has at least two separate effects in the extracellular matrix: (i) interacting with glycosaminoglycans and proteoglycans during their synthesis, and (ii) forming ionic substitutions in the crystal lattice structure of hydroxyapatite. In addition, the dissolution products of bioactive glass (predominantly silicic acids) have significant effects on the molecular biology of osteoblasts in vitro, regulating the expression of several genes including key osteoblastic markers, cell cycle regulators and extracellular matrix proteins. Researchers have sought to capitalize on these effects and have generated a diverse array of biomaterials, which include bioactive glasses, silicon-substituted hydroxyapatites and pure, porosified silicon, but all these materials share similarities in the mechanisms that result in their bioactivity. This review discusses the current data obtained from original research in biochemistry and biomaterials science supporting the role of silicon in bone, comparing both the biological function of the element and analysing the evolution of silicon-containing biomaterials. Copyright © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Silicone Resin Applications for Ceramic Precursors and Composites

Directory of Open Access Journals (Sweden)

Masaki Narisawa

2010-06-01

Full Text Available This article reviews the applications of silicone resins as ceramic precursors. The historical background of silicone synthesis chemistry is introduced to explain the production costs and supply availability of various silicones. Thermal degradation processes of silicones are classified in terms of the main chain structure and cyclic oligomer expulsion process, which determine the resulting ceramic yield and the chemical composition. The high temperature decomposition of Si-O-C beyond 1,400 °C in an inert atmosphere and formation of a protective silica layer on material surfaces beyond 1,200 °C in an oxidative atmosphere are discussed from the viewpoints of the wide chemical composition of the Si-O-C materials. Applications of the resins for binding agents, as starting materials for porous ceramics, matrix sources with impregnation, fiber spinning and ceramic adhesions are introduced. The recent development of the process of filler or cross-linking agent additions to resin compounds is also introduced. Such resin compounds are useful for obtaining thick coatings, MEMS parts and bulk ceramics, which are difficult to obtain by pyrolysis of simple organometallic precursors without additives.

Superconducting Super Collider silicon tracking subsystem research and development

International Nuclear Information System (INIS)

Miller, W.O.; Thompson, T.C.; Ziock, H.J.; Gamble, M.T.

1990-12-01

The Alamos National Laboratory Mechanical Engineering and Electronics Division has been investigating silicon-based elementary particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, materials, and thermal issues have been addressed. This paper explores detector structural integrity and stability, including detailed finite element models of the silicon wafer support and predictive methods used in designing with advanced composite materials. The current design comprises a magnesium metal matrix composite (MMC) truss space frame to provide a sparse support structure for the complex array of silicon detectors. This design satisfies the 25-μm structural stability requirement in a 10-Mrad radiation environment. This stability is achieved without exceeding the stringent particle interaction constraints set at 2.5% of a radiation length. Materials studies have considered thermal expansion, elastic modulus, resistance to radiation and chemicals, and manufacturability of numerous candidate materials. Based on optimization of these parameters, the MMC space frame will possess a coefficient of thermal expansion (CTE) near zero to avoid thermally induced distortions, whereas the cooling rings, which support the silicon detectors and heat pipe network, will probably be constructed of a graphite/epoxy composite whose CTE is engineered to match that of silicon. Results from radiation, chemical, and static loading tests are compared with analytical predictions and discussed. Electronic thermal loading and its efficient dissipation using heat pipe cooling technology are discussed. Calculations and preliminary designs for a sprayed-on graphite wick structure are presented. A hydrocarbon such as butane appears to be a superior choice of heat pipe working fluid based on cooling, handling, and safety criteria

Thermogravimetric analysis of silicon carbide-silicon nitride polycarbosilazane precursor during pyrolysis from ambient to 1000 C

Science.gov (United States)

Ledbetter, F. E., III; Daniels, J. G.; Clemons, J. M.; Hundley, N. H.; Penn, B. G.

1984-01-01

Thermogravimetric analysis data are presented on the unmeltable polycarbosilazane precursor of silicon carbide-silicon nitride fibers, over the room temperature-1000 C range in a nitrogen atmosphere, in order to establish the weight loss at various temperatures during the precursor's pyrolysis to the fiber material. The fibers obtained by this method are excellent candidates for use in applications where the oxidation of carbon fibers (above 400 C) renders them unsuitable.

Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructur

Czech Academy of Sciences Publication Activity Database

Bagraev, N.T.; Danilovskii, E.Yu.; Gets, D.S.; Kalabukhova, E.N.; Klyachkin, L.E.; Koudryavtsev, A.A.; Malyarenko, A.M.; Mashkov, V.A.; Savchenko, Dariia; Shanina, B.D.

2015-01-01

Roč. 49, č. 5 (2015), 649-657 ISSN 1063-7826 R&D Projects: GA ČR GP13-06697P; GA MŠk(CZ) LM2011029 Grant - others:SAFMAT(XE) CZ.2.16/3.1.00/22132 Institutional support: RVO:68378271 Keywords : electron spin resonance * 6H-SiC nanostructures * silicon vacancy related centers * NV centers Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.701, year: 2015

Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters

International Nuclear Information System (INIS)

Gutierrez, M. T.; Gandia, J. J.; Carabe, J.

1999-01-01

The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p- and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)23 refs

GaN-on-Silicon - Present capabilities and future directions

Science.gov (United States)

Boles, Timothy

2018-02-01

Gallium Nitride, in the form of epitaxial HEMT transistors on various substrate materials, is the newest and most promising semiconductor technology for high performance devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-Silicon based devices and MMIC's which enable both state-of-the-art high frequency functionality and the ability to scale production into large wafer diameter CMOS foundries. The design and development of GaN-on-Silicon structures and devices will be presented beginning with the basic material parameters, growth of the required epitaxial construction, and leading to the fundamental operational theory of high frequency, high power HEMTs. In this discussion comparisons will be made with alternative substrate materials with emphasis on contrasting the inherent advantages of a silicon based system. Theory of operation of microwave and mmW high power HEMT devices will be presented with special emphasis on fundamental limitations of device performance including inherent frequency limiting transit time analysis, required impedance transformations, internal and external parasitic reactance, thermal impedance optimization, and challenges improved by full integration into monolithic MMICs. Lastly, future directions for implementing GaN-on-Silicon into mainstream CMOS silicon semiconductor technologies will be discussed.