WorldWideScience

Sample records for silicon pressure sensor

  1. A silicon micromachined resonant pressure sensor

    International Nuclear Information System (INIS)

    Tang Zhangyang; Fan Shangchun; Cai Chenguang

    2009-01-01

    This paper describes the design, fabrication and test of a silicon micromachined resonant pressure sensor. A square membrane and a doubly clamped resonant beam constitute a compound structure. The former senses the pressure directly, while the latter changes its resonant frequency according to deformation of the membrane. The final output relation between the resonant frequency and the applied pressure is deducted according to the structure mechanical properties. Sensors are fabricated by micromachining technology, and then sealed in vaccum. These sensors are tested by open-loop and close-loop system designed on purpose. The experiment results demonstrate that the sensor has a sensitivity of 49.8Hz/kPa and repeatability of 0.08%.

  2. Piezoresistive silicon pressure sensors in cryogenic environment

    Science.gov (United States)

    Kahng, Seun K.; Chapman, John J.

    1989-01-01

    This paper presents data on low-temperature measurements of silicon pressure sensors. It was found that both the piezoresistance coefficients and the charge-carrier mobility increase with decreasing temperature. For lightly doped semiconductor materials, the density of free charge carriers decreases with temperature and can freeze out eventually. However, the effect of carrier freeze-out can be minimized by increasing the impurity content to higher levels, at which the temperature dependency of piezoresistance coefficients is reduced. An impurity density of 1 x 10 to the 19th/cu cm was found to be optimal for cryogenic applications of pressure sensor dies.

  3. High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Meredith, Roger D.; Chang, Clarence T.; Savrun, Ender

    2014-01-01

    Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

  4. High precision silicon piezo resistive SMART pressure sensor

    International Nuclear Information System (INIS)

    Brown, Rod

    2005-01-01

    Instruments for test and calibration require a pressure sensor that is precise and stable. Market forces also dictate a move away from single measurand test equipment and, certainly in the case of pressure, away from single range equipment. A pressure 'module' is required which excels in pressure measurement but is interchangble with sensors for other measurands. A communications interface for such a sensor has been specified. Instrument Digital Output Sensor (IDOS) that permits this interchanagability and allows the sensor to be inside or outside the measuring instrument. This paper covers the design and specification of a silicon diaphragm piezo resistive SMART sensor using this interface. A brief history of instrument sensors will be given to establish the background to this development. Design choices of the silicon doping, bridge energisation method, temperature sensing, signal conversion, data processing, compensation method, communications interface will be discussed. The physical format of the 'in-instrument' version will be shown and then extended to the packaging design for the external version. Test results will show the accuracy achieved exceeds the target of 0.01%FS over a range of temperatures

  5. High precision silicon piezo resistive SMART pressure sensor

    Science.gov (United States)

    Brown, Rod

    2005-01-01

    Instruments for test and calibration require a pressure sensor that is precise and stable. Market forces also dictate a move away from single measurand test equipment and, certainly in the case of pressure, away from single range equipment. A pressure `module' is required which excels in pressure measurement but is interchangble with sensors for other measurands. A communications interface for such a sensor has been specified. Instrument Digital Output Sensor (IDOS) that permits this interchanagability and allows the sensor to be inside or outside the measuring instrument. This paper covers the design and specification of a silicon diaphragm piezo resistive SMART sensor using this interface. A brief history of instrument sensors will be given to establish the background to this development. Design choices of the silicon doping, bridge energisation method, temperature sensing, signal conversion, data processing, compensation method, communications interface will be discussed. The physical format of the `in-instrument' version will be shown and then extended to the packaging design for the external version. Test results will show the accuracy achieved exceeds the target of 0.01%FS over a range of temperatures.

  6. Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2012-01-01

    We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

  7. Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

    Science.gov (United States)

    Beheim, Glenn M.

    2003-01-01

    The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were

  8. Attachment of MEM piezoresistive silicon pressure sensor dies using different adhesives

    Directory of Open Access Journals (Sweden)

    Jović Vesna B.

    2011-01-01

    Full Text Available This paper gives comparison and discussion of adhesives used for attachment of silicon piezoresistive pressure sensor dies. Special attention is paid on low pressure sensor dies because of their extreme sensitivity on stresses, which can arise from packaging procedure and applied materials. Commercially available adhesives “Scotch Weld 2214 Hi-Temp” from “3M Co.” and “DM2700P/H848” from “DIEMAT”, USA, were compared. First of them is aluminum filled epoxy adhesive and second is low melting temperature (LMT glass paste. Comparing test results for low pressure sensor chips we found that LMT glass (glass frit is better adhesive for this application. Applying LMT glass paste minimizes internal stresses caused by disagreement of coefficients of thermal expansions between sensor die and housing material. Also, it minimizes stresses introduced during applying external loads in the process of pressure measuring. Regarding the measurements, for the sensors installed with filled epoxy paste, resistor for compensation of temperature offset change had negative values in all cases, which means that linear temperature compensation, of sensors installed this way, would be impossible. In the sensors installed with LMT glass paste, all results, without exception, were in their common limits (values, which give the possibility of passive temperature compensation. Furthermore, LMT glass attachment can broaden temperature operating range of MEM silicon pressure sensors towards higher values, up to 120 ºC.

  9. Cryogenic, Absolute, High Pressure Sensor

    Science.gov (United States)

    Chapman, John J. (Inventor); Shams. Qamar A. (Inventor); Powers, William T. (Inventor)

    2001-01-01

    A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.

  10. Cryogenic High Pressure Sensor Module

    Science.gov (United States)

    Chapman, John J. (Inventor); Shams, Qamar A. (Inventor); Powers, William T. (Inventor)

    1999-01-01

    A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.

  11. Silicon pressure transducers: a review

    International Nuclear Information System (INIS)

    Aceves M, M.; Sandoval I, F.

    1994-01-01

    We present a review of the pressure sensors, which use the silicon piezo resistive effect and micro machining technique. Typical pressure sensors, applications, design and other different structures are presented. (Author)

  12. Design of air blast pressure sensors based on miniature silicon membrane and piezoresistive gauges

    Science.gov (United States)

    Riondet, J.; Coustou, A.; Aubert, H.; Pons, P.; Lavayssière, M.; Luc, J.; Lefrançois, A.

    2017-11-01

    Available commercial piezoelectric pressure sensors are not able to accurately reproduce the ultra-fast transient pressure occurring during an air blast experiment. In this communication a new pressure sensor prototype based on a miniature silicon membrane and piezoresistive gauges is reported for significantly improving the performances in terms of time response. Simulation results demonstrate the feasibility of a pressure transducer having a fundamental resonant frequency almost ten times greater than the commercial piezoelectric sensors one. The sensor uses a 5μm-thick SOI membrane and four P-type silicon gauges (doping level ≅ 1019 at/cm3) in Wheatstone bridge configuration. To obtain a good trade-off between the fundamental mechanical resonant frequency and pressure sensitivity values, the typical dimension of the rectangular membrane is fixed to 30μm x 90μm with gauge dimension of 1μm x 5μm. The achieved simulated mechanical resonant frequency of these configuration is greater than 40MHz with a sensitivity of 0.04% per bar.

  13. Laterally Driven Resonant Pressure Sensor with Etched Silicon Dual Diaphragms and Combined Beams

    Directory of Open Access Journals (Sweden)

    Xiaohui Du

    2016-01-01

    Full Text Available A novel structure of the resonant pressure sensor is presented in this paper, which tactfully employs intercoupling between dual pressure-sensing diaphragms and a laterally driven resonant strain gauge. After the resonant pressure sensor principle is introduced, the coupling mechanism of the diaphragms and resonator is analyzed and the frequency equation of the resonator based on the triangle geometry theory is developed for this new coupling structure. The finite element (FE simulation results match the theoretical analysis over the full scale of the device. This pressure sensor was first fabricated by dry/wet etching and thermal silicon bonding, followed by vacuum-packaging using anodic bonding technology. The test maximum error of the fabricated sensor is 0.0310%F.S. (full scale in the range of 30 to 190 kPa, its pressure sensitivity is negative and exceeding 8 Hz/kPa, and its Q-factor reaches 20,000 after wafer vacuum-packaging. A novel resonant pressure sensor with high accuracy is presented in this paper.

  14. FISH & CHIPS: Single Chip Silicon MEMS CTDL Salinity, Temperature, Pressure and Light sensor for use in fisheries research

    DEFF Research Database (Denmark)

    Hyldgård, Anders; Hansen, Ole; Thomsen, Erik Vilain

    2005-01-01

    A single-chip silicon MEMS CTDL multi sensor for use in aqueous environments is presented. The new sensor chip consists of a conductivity sensor based on platinum electrodes (C), an ion-implanted thermistor temperature sensor (T), a piezoresistive pressure sensor (D for depth/pressure) and an ion......-implanted p-n junction light sensor (L). The design and fabrication process is described. A temperature sensitivity of 0.8 × 10-3K-1 has been measured and detailed analysis of conductivity measurement data shows a cell constant of 81 cm-1....

  15. A Smart High Accuracy Silicon Piezoresistive Pressure Sensor Temperature Compensation System

    Directory of Open Access Journals (Sweden)

    Guanwu Zhou

    2014-07-01

    Full Text Available Theoretical analysis in this paper indicates that the accuracy of a silicon piezoresistive pressure sensor is mainly affected by thermal drift, and varies nonlinearly with the temperature. Here, a smart temperature compensation system to reduce its effect on accuracy is proposed. Firstly, an effective conditioning circuit for signal processing and data acquisition is designed. The hardware to implement the system is fabricated. Then, a program is developed on LabVIEW which incorporates an extreme learning machine (ELM as the calibration algorithm for the pressure drift. The implementation of the algorithm was ported to a micro-control unit (MCU after calibration in the computer. Practical pressure measurement experiments are carried out to verify the system’s performance. The temperature compensation is solved in the interval from −40 to 85 °C. The compensated sensor is aimed at providing pressure measurement in oil-gas pipelines. Compared with other algorithms, ELM acquires higher accuracy and is more suitable for batch compensation because of its higher generalization and faster learning speed. The accuracy, linearity, zero temperature coefficient and sensitivity temperature coefficient of the tested sensor are 2.57% FS, 2.49% FS, 8.1 × 10−5/°C and 29.5 × 10−5/°C before compensation, and are improved to 0.13%FS, 0.15%FS, 1.17 × 10−5/°C and 2.1 × 10−5/°C respectively, after compensation. The experimental results demonstrate that the proposed system is valid for the temperature compensation and high accuracy requirement of the sensor.

  16. Piezoresistive pressure sensor using low-temperature aluminium induced crystallization of sputter-deposited amorphous silicon film

    International Nuclear Information System (INIS)

    Tiwari, Ruchi; Chandra, Sudhir

    2013-01-01

    In the present work, we have investigated the piezoresistive properties of silicon films prepared by the radio frequency magnetron sputtering technique, followed by the aluminium induced crystallization (AIC) process. Orientation and grain size of the polysilicon films were studied by x-ray diffraction analysis and found to be in the range 30–50 nm. Annealing of the Al–Si stack on an oxidized silicon substrate was performed in air ambient at 300–550 °C, resulting in layer exchange and transformation from amorphous to polysilicon phase. Van der Pauw and Hall measurement techniques were used to investigate the sheet resistance and carrier mobility of the resulting polycrystalline silicon film. The effect of Al thickness on the sheet resistance and mobility was also studied in the present work. A piezoresistive pressure sensor was fabricated on an oxidized silicon substrate in a Wheatstone bridge configuration, comprising of four piezoresistors made of polysilicon film obtained by the AIC process. The diaphragm was formed by the bulk-micromachining of silicon substrate. The response of the pressure sensor with applied negative pressure in 10–95 kPa range was studied. The gauge factor was estimated to be 5 and 18 for differently located piezoresistors on the diaphragm. The sensitivity of the pressure sensor was measured to be ∼ 30 mV MPa −1 , when the Wheatstone bridge was biased at 1 V input voltage. (paper)

  17. Porous Silicon Sensors- Elusive and Erudite

    OpenAIRE

    H. Saha, Prof.

    2017-01-01

    Porous Silicon Sensors have been fabricated and tested successfully over the last few years as humidity sensors, vapour sensors, gas sensors, piezoresistive pressure sensors and bio- sensors. In each case it has displayed remarkably sensitivity, relatively low temperature operation and ease of fabrication. Brief description of fabrication and properties of all these types of different sensors is reported in this paper. The barriers of porous silicon like contact, non- uniformity, instability ...

  18. DOUBLE BOSS SCULPTURED DIAPHRAGM EMPLOYED PIEZORESISTIVE MEMS PRESSURE SENSOR WITH SILICON-ON-INSULATOR (SOI

    Directory of Open Access Journals (Sweden)

    D. SINDHANAISELVI

    2017-07-01

    Full Text Available This paper presents the detailed study on the measurement of low pressure sensor using double boss sculptured diaphragm of piezoresistive type with MEMS technology in flash flood level measurement. The MEMS based very thin diaphragms to sense the low pressure is analyzed by introducing supports to achieve linearity. The simulation results obtained from Intellisuite MEMS CAD design tool show that very thin diaphragms with rigid centre or boss give acceptable linearity. Further investigations on very thin diaphragms embedded with piezoresistor for low pressure measurement show that it is essential to analyse the piezoresistor placement and size of piezoresistor to achieve good sensitivity. A modified analytical modelling developed in this study for double boss sculptured diaphragm results were compared with simulated results. Further the enhancement of sensitivity is analyzed using non uniform thickness diaphragm and Silicon-On-Insulator (SOI technique. The simulation results indicate that the double boss square sculptured diaphragm with SOI layer using 0.85μm thickness yields the higher voltage sensitivity, acceptable linearity with Small Scale Deflection.

  19. The analytical calibration model of temperature effects on a silicon piezoresistive pressure sensor

    Directory of Open Access Journals (Sweden)

    Meng Nie

    2017-03-01

    Full Text Available Presently, piezoresistive pressure sensors are highly demanded for using in various microelectronic devices. The electrical behavior of these pressure sensor is mainly dependent on the temperature gradient. In this paper, various factors,which includes effect of temperature, doping concentration on the pressure sensitive resistance, package stress, and temperature on the Young’s modulus etc., are responsible for the temperature drift of the pressure sensor are analyzed. Based on the above analysis, an analytical calibration model of the output voltage of the sensor is proposed and the experimental data is validated through a suitable model.

  20. 800 C Silicon Carbide (SiC) Pressure Sensors for Engine Ground Testing

    Science.gov (United States)

    Okojie, Robert S.

    2016-01-01

    MEMS-based 4H-SiC piezoresistive pressure sensors have been demonstrated at 800 C, leading to the discovery of strain sensitivity recovery with increasing temperatures above 400 C, eventually achieving up to, or near, 100 recovery of the room temperature values at 800 C. This result will allow the insertion of highly sensitive pressure sensors closer to jet, rocket, and hypersonic engine combustion chambers to improve the quantification accuracy of combustor dynamics, performance, and increase safety margin. Also, by operating at higher temperature and locating closer to the combustion chamber, reduction of the length (weight) of pressure tubes that are currently used will be achieved. This will result in reduced costlb to access space.

  1. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  2. A temperature and pressure controlled calibration system for pressure sensors

    Science.gov (United States)

    Chapman, John J.; Kahng, Seun K.

    1989-01-01

    A data acquisition and experiment control system capable of simulating temperatures from -184 to +220 C and pressures either absolute or differential from 0 to 344.74 kPa is developed to characterize silicon pressure sensor response to temperature and pressure. System software is described that includes sensor data acquisition, algorithms for numerically derived thermal offset and sensitivity correction, and operation of the environmental chamber and pressure standard. This system is shown to be capable of computer interfaced cryogenic testing to within 1 C and 34.47 Pa of single channel or multiplexed arrays of silicon pressure sensors.

  3. A high performance micro-pressure sensor based on a double-ended quartz tuning fork and silicon diaphragm in atmospheric packaging

    International Nuclear Information System (INIS)

    Cheng, Rongjun; Li, Cun; Zhao, Yulong; Li, Bo; Tian, Bian

    2015-01-01

    A resonant micro-pressure sensor based on a double-ended quartz tuning fork (DEQTF) and bossed silicon diaphragm in atmospheric packaging is presented. To achieve vacuum-free packaging with a high quality factor, the DEQTF is designed to resonate in an anti-phase vibration mode in a plane that is under the effect of slide-film damping. The feasibility is demonstrated by theoretical analysis and a finite element simulation. The dimensions of the DEQTF and diaphragm are optimized in accordance with the principles of improving sensitivity and minimizing energy dissipation. The sensor chip is fabricated using quartz and silicon micromachining technologies, and simply packaged in a stainless steel shell with standard atmosphere. The experimental setup is established for the calibration, where an additional sensor prototype without a pressure port is introduced as a frequency reference. By detecting the frequency difference of the tested sensor and reference sensor, the influences of environmental factors such as temperature and shocks on measuring accuracy are eliminated effectively. Under the action of a self-excitation circuit, static performance is obtained. The sensitivity of the sensor is 299 kHz kPa −1 in the operating range of 0–10 kPa at room temperature. Testing results shows a nonlinearity of 0.0278%FS, a hysteresis of 0.0207%FS and a repeatability of 0.0375%FS. The results indicate that the proposed sensor has favorable features, which provides a cost-effective and high-performance approach for low pressure measurement. (paper)

  4. Cryogenic MEMS Pressure Sensor, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — A directly immersible cryogenic MEMS pressure sensor will be developed. Each silicon die will contain a vacuum-reference and a tent-like membrane. Offsetting thermal...

  5. Microelectronic temperature sensor; silicon temperature sensor

    International Nuclear Information System (INIS)

    Beitner, M.; Kanert, W.; Reichert, H.

    1982-01-01

    The goal of this work was to develop a silicon temperature sensor with a sensitivity and a reliability as high and a tolerance as small as possible, for use in measurement and control. By employing the principle of spreading-resistance, using silicon doped by neutron transmutation, and trimming of the single wafer tolerances of resistance less than +- 5% can be obtained; overstress tests yielded a long-term stability better than 0.2%. Some applications show the advantageous use of this sensor. (orig.) [de

  6. Design Optimization and Fabrication of High-Sensitivity SOI Pressure Sensors with High Signal-to-Noise Ratios Based on Silicon Nanowire Piezoresistors

    Directory of Open Access Journals (Sweden)

    Jiahong Zhang

    2016-10-01

    Full Text Available In order to meet the requirement of high sensitivity and signal-to-noise ratios (SNR, this study develops and optimizes a piezoresistive pressure sensor by using double silicon nanowire (SiNW as the piezoresistive sensing element. First of all, ANSYS finite element method and voltage noise models are adopted to optimize the sensor size and the sensor output (such as sensitivity, voltage noise and SNR. As a result, the sensor of the released double SiNW has 1.2 times more sensitivity than that of single SiNW sensor, which is consistent with the experimental result. Our result also displays that both the sensitivity and SNR are closely related to the geometry parameters of SiNW and its doping concentration. To achieve high performance, a p-type implantation of 5 × 1018 cm−3 and geometry of 10 µm long SiNW piezoresistor of 1400 nm × 100 nm cross area and 6 µm thick diaphragm of 200 µm × 200 µm are required. Then, the proposed SiNW pressure sensor is fabricated by using the standard complementary metal-oxide-semiconductor (CMOS lithography process as well as wet-etch release process. This SiNW pressure sensor produces a change in the voltage output when the external pressure is applied. The involved experimental results show that the pressure sensor has a high sensitivity of 495 mV/V·MPa in the range of 0–100 kPa. Nevertheless, the performance of the pressure sensor is influenced by the temperature drift. Finally, for the sake of obtaining accurate and complete information over wide temperature and pressure ranges, the data fusion technique is proposed based on the back-propagation (BP neural network, which is improved by the particle swarm optimization (PSO algorithm. The particle swarm optimization–back-propagation (PSO–BP model is implemented in hardware using a 32-bit STMicroelectronics (STM32 microcontroller. The results of calibration and test experiments clearly prove that the PSO–BP neural network can be effectively applied

  7. An electrokinetic pressure sensor

    International Nuclear Information System (INIS)

    Kim, Dong-Kwon; Kim, Sung Jin; Kim, Duckjong

    2008-01-01

    A new concept for a micro pressure sensor is demonstrated. The pressure difference between the inlet and the outlet of glass nanochannels is obtained by measuring the electrokinetically generated electric potential. To demonstrate the proposed concept, experimental investigations are performed for 100 nm wide nanochannels with sodium chloride solutions having various concentrations. The proposed pressure sensor is able to measure the pressure difference within a 10% deviation from linearity. The sensitivity of the electrokinetic pressure sensor with 10 −5 M sodium chloride solution is 18.5 µV Pa −1 , which is one order of magnitude higher than that of typical diaphragm-based pressure sensors. A numerical model is presented for investigating the effects of the concentration and the channel width on the sensitivity of the electrokinetic pressure sensor. Numerical results show that the sensitivity increases as the concentration decreases and the channel width increases

  8. Surface Effects in Segmented Silicon Sensors

    OpenAIRE

    Kopsalis, Ioannis

    2017-01-01

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO2 layers at the surface, thus changing the sensor properties and limiting their...

  9. Downhole pressure sensor

    Science.gov (United States)

    Berdahl, C. M.

    1980-01-01

    Sensor remains accurate in spite of varying temperatures. Very accurate, sensitive, and stable downhole pressure measurements are needed for vaiety of reservoir engineering applications, such as deep petroleum reservoirs, especially gas reservoirs, and in areas of high geothermal gradient.

  10. Micro packaged MEMS pressure sensor for intracranial pressure measurement

    International Nuclear Information System (INIS)

    Liu Xiong; Yao Yan; Ma Jiahao; Zhang Zhaohua; Zhang Yanhang; Wang Qian; Ren Tianling

    2015-01-01

    This paper presents a micro packaged MEMS pressure sensor for intracranial pressure measurement which belongs to BioMEMS. It can be used in lumbar puncture surgery to measure intracranial pressure. Miniaturization is key for lumbar puncture surgery because the sensor must be small enough to allow it be placed in the reagent chamber of the lumbar puncture needle. The size of the sensor is decided by the size of the sensor chip and package. Our sensor chip is based on silicon piezoresistive effect and the size is 400 × 400 μm 2 . It is much smaller than the reported polymer intracranial pressure sensors such as liquid crystal polymer sensors. In terms of package, the traditional dual in-line package obviously could not match the size need, the minimal size of recently reported MEMS-based intracranial pressure sensors after packaging is 10 × 10 mm 2 . In this work, we are the first to introduce a quad flat no-lead package as the package form of piezoresistive intracranial pressure sensors, the whole size of the sensor is minimized to only 3 × 3 mm 2 . Considering the liquid measurement environment, the sensor is gummed and waterproof performance is tested; the sensitivity of the sensor is 0.9 × 10 −2 mV/kPa. (paper)

  11. Ultrahigh Temperature Capacitive Pressure Sensor

    Science.gov (United States)

    Harsh, Kevin

    2014-01-01

    Robust, miniaturized sensing systems are needed to improve performance, increase efficiency, and track system health status and failure modes of advanced propulsion systems. Because microsensors must operate in extremely harsh environments, there are many technical challenges involved in developing reliable systems. In addition to high temperatures and pressures, sensing systems are exposed to oxidation, corrosion, thermal shock, fatigue, fouling, and abrasive wear. In these harsh conditions, sensors must be able to withstand high flow rates, vibration, jet fuel, and exhaust. In order for existing and future aeropropulsion turbine engines to improve safety and reduce cost and emissions while controlling engine instabilities, more accurate and complete sensor information is necessary. High-temperature (300 to 1,350 C) capacitive pressure sensors are of particular interest due to their high measurement bandwidth and inherent suitability for wireless readout schemes. The objective of this project is to develop a capacitive pressure sensor based on silicon carbon nitride (SiCN), a new class of high-temperature ceramic materials, which possesses excellent mechanical and electric properties at temperatures up to 1,600 C.

  12. Miniature piezoresistive solid state integrated pressure sensors

    Science.gov (United States)

    Kahng, S. K.

    1980-01-01

    The characteristics of silicon pressure sensors with an ultra-small diaphragm are described. The pressure sensors utilize rectangular diaphragm as small as 0.0127 x 0.0254 cm and a p-type Wheatstone bridge consisting of diffused piezoresistive elements, 0.000254 cm by 0.00254 cm. These sensors exhibit as high as 0.5 MHz natural frequency and 1 mV/V/psi pressure sensitivity. Fabrication techniques and high frequency results from shock tube testing and low frequency comparison with microphones are presented.

  13. Pressure Measurement Sensor

    Science.gov (United States)

    1997-01-01

    FFPI Industries Inc. is the manufacturer of fiber-optic sensors that furnish accurate pressure measurements in internal combustion chambers. Such an assessment can help reduce pollution emitted by these engines. A chief component in the sensor owes its seven year- long development to Lewis Research Center funding to embed optical fibers and sensors in metal parts. NASA support to Texas A&M University played a critical role in developing this fiber optic technology and led to the formation of FFPI Industries and the production of fiber sensor products. The simple, rugged design of the sensor offers the potential for mass production at low cost. Widespread application of the new technology is forseen, from natural gas transmission, oil refining and electrical power generation to rail transport and the petrochemical paper product industry.

  14. Urodynamic pressure sensor

    Science.gov (United States)

    Moore, Thomas

    1991-01-01

    A transducer system was developed for measuring the closing pressure profile along the female urethra, which provides up to five sensors within the functional length of the urethra. This new development is an improvement over an earlier measurement method that has a smaller sensor area and was unable to respond to transient events. Three sensors were constructed; one of them was subjected to approximately eight hours of use in a clinical setting during which 576 data points were obtained. The complete instrument system, including the signal conditioning electronics, data acquisition unit, and the computer with its display and printer is described and illustrated.

  15. Micromachined pressure/flow-sensor

    NARCIS (Netherlands)

    Oosterbroek, R.E.; Lammerink, Theodorus S.J.; Berenschot, Johan W.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt; van den Berg, Albert

    1999-01-01

    The micromechanical equivalent of a differential pressure flow-sensor, well known in macro mechanics, is discussed. Two separate pressure sensors are used for the device, enabling to measure both, pressure as well as volume flow-rate. An integrated sensor with capacitive read-out as well as a

  16. Silicon Micromachined Sensor for Broadband Vibration Analysis

    Science.gov (United States)

    Gutierrez, Adolfo; Edmans, Daniel; Cormeau, Chris; Seidler, Gernot; Deangelis, Dave; Maby, Edward

    1995-01-01

    The development of a family of silicon based integrated vibration sensors capable of sensing mechanical resonances over a broad range of frequencies with minimal signal processing requirements is presented. Two basic general embodiments of the concept were designed and fabricated. The first design was structured around an array of cantilever beams and fabricated using the ARPA sponsored multi-user MEMS processing system (MUMPS) process at the Microelectronics Center of North Carolina (MCNC). As part of the design process for this first sensor, a comprehensive finite elements analysis of the resonant modes and stress distribution was performed using PATRAN. The dependence of strain distribution and resonant frequency response as a function of Young's modulus in the Poly-Si structural material was studied. Analytical models were also studied. In-house experimental characterization using optical interferometry techniques were performed under controlled low pressure conditions. A second design, intended to operate in a non-resonant mode and capable of broadband frequency response, was proposed and developed around the concept of a cantilever beam integrated with a feedback control loop to produce a null mode vibration sensor. A proprietary process was used to integrat a metal-oxide semiconductor (MOS) sensing device, with actuators and a cantilever beam, as part of a compatible process. Both devices, once incorporated as part of multifunction data acquisition and telemetry systems will constitute a useful system for NASA launch vibration monitoring operations. Satellite and other space structures can benefit from the sensor for mechanical condition monitoring functions.

  17. Sensors for ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H.F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N. [INFN Torino, Torino (Italy); Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain)

    2014-11-21

    We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain.

  18. Sensors for ultra-fast silicon detectors

    International Nuclear Information System (INIS)

    Sadrozinski, H.F.-W.; Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D.

    2014-01-01

    We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain

  19. A probe station for testing silicon sensors

    CERN Multimedia

    Ulysse, Fichet

    2017-01-01

    A probe station for testing silicon sensors. The probe station is located inside a dark box that can keep away light during the measurement. The set-up is located in the DSF (Department Silicon Facility). The golden plate is the "chuck" where the sensor is usually placed on. With the help of "manipulators", thin needles can be precisely positioned that can contact the sensor surface. Using these needles and the golden chuck, a high voltage can be applied to the sensor to test its behaviour under high voltage. We will use the silicon sensors that we test here for building prototypes of a highly granular sandwich calorimeter, the CMS HGC (Highly granular Calorimeter) upgrade for High-Luminosity LHC.

  20. Stress modeling of microdiaphragm pressure sensors

    Science.gov (United States)

    Tack, P. C.; Busta, H. H.

    1986-01-01

    A finite element program analysis was used to model the stress distribution of two monocrystalline silicon diaphragm pressure sensors. One configuration consists of an anisotropically backside etched diaphragm into a 250 micron thick, (100) oriented, silicon wafer. The diaphragm and total chip dimensions are given. The device is rigidly clamped on the back to a support substrate. Another configuration consists of a monocrystalline, (100), microdiaphragm which is formed on top of the wafer and whose area is reduced by a factor of 25 over the first configuration. The diaphragm is rigidly clamped to the silicon wafer. The stresses were calculated at a gauge pressure of 300 mm Hg and used to estimate the piezoresistive responses of resistor elements which were placed parallel and perpendicular near the diaphragm edges.

  1. Semiconductor-based electret sensors for sound and pressure

    NARCIS (Netherlands)

    Voorthuyzen, J.A.; Bergveld, Piet; Sprenkels, A.J.

    1989-01-01

    The theory and experimental results for integrated electret-based silicon sensors for the detection of sound and pressure are presented. A silicon electret microphone for use in hearing-aids is described. It has an experimentally determined sensitivity of 19 mV/Pa in the frequency range of 50 Hz to

  2. Optical detection system for MEMS-type pressure sensor

    International Nuclear Information System (INIS)

    Sareło, K; Górecka-Drzazga, A; Dziuban, J A

    2015-01-01

    In this paper a special optical detection system designed for a MEMS-type (micro-electro-mechanical system) silicon pressure sensor is presented. The main part of the optical system—a detection unit with a perforated membrane—is bonded to the silicon sensor, and placed in a measuring system. An external light source illuminates the membrane of the pressure sensor. Owing to the light reflected from the deflected membrane sensor, the optical pattern consisting of light points is visible, and pressure can be estimated. The optical detection unit (20   ×   20   ×   20.4 mm 3 ) is fabricated using microengineering techniques. Its dimensions are adjusted to the dimensions of the pressure sensor (5   ×   5 mm 2 silicon membrane). Preliminary tests of the optical detection unit integrated with the silicon pressure sensor are carried out. For the membrane sensor from 15 to 60 µm thick, a repeatable detection of the differential pressure in the range of 0 to 280 kPa is achieved. The presented optical microsystem is especially suitable for the pressure measurements in a high radiation environment. (paper)

  3. Thin film oxygen partial pressure sensor

    Science.gov (United States)

    Wortman, J. J.; Harrison, J. W.; Honbarrier, H. L.; Yen, J.

    1972-01-01

    The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.

  4. Electronically-Scanned Pressure Sensors

    Science.gov (United States)

    Coe, C. F.; Parra, G. T.; Kauffman, R. C.

    1984-01-01

    Sensors not pneumatically switched. Electronic pressure-transducer scanning system constructed in modular form. Pressure transducer modules and analog to digital converter module small enough to fit within cavities of average-sized wind-tunnel models. All switching done electronically. Temperature controlled environment maintained within sensor modules so accuracy maintained while ambient temperature varies.

  5. Photonic Crystal Sensors Based on Porous Silicon

    Directory of Open Access Journals (Sweden)

    Claudia Pacholski

    2013-04-01

    Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

  6. Photonic Crystal Sensors Based on Porous Silicon

    Science.gov (United States)

    Pacholski, Claudia

    2013-01-01

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

  7. Porous Silicon Structures as Optical Gas Sensors.

    Science.gov (United States)

    Levitsky, Igor A

    2015-08-14

    We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi) and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers) are described for gas sensing with an emphasis on the device specificity, sensitivity and stability to the environment. Special attention is paid to multiparametric sensing and sensor array platforms as effective trends for the improvement of analyte classification and quantification. Mechanisms of gas physical and chemical sorption inside PSi mesopores and pores of PSi functional composites are discussed.

  8. Fabrication of 3D Silicon Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kok, A.; Hansen, T.E.; Hansen, T.A.; Lietaer, N.; Summanwar, A.; /SINTEF, Oslo; Kenney, C.; Hasi, J.; /SLAC; Da Via, C.; /Manchester U.; Parker, S.I.; /Hawaii U.

    2012-06-06

    Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.

  9. Multi-channel electronically scanned cryogenic pressure sensor

    Science.gov (United States)

    Chapman, John J. (Inventor); Hopson, Purnell, Jr. (Inventor); Kruse, Nancy M. H. (Inventor)

    1995-01-01

    A miniature, multi-channel, electronically scanned pressure measuring device uses electrostatically bonded silicon dies in a multielement array. These dies are bonded at specific sites on a glass, prepatterned substrate. Thermal data is multiplexed and recorded on each individual pressure measuring diaphragm. The device functions in a cryogenic environment without the need of heaters to keep the sensor at constant temperatures.

  10. Optical fiber powered pressure sensor

    International Nuclear Information System (INIS)

    Schweizer, P.; Neveux, L.; Ostrowsky, D.B.

    1987-01-01

    In the system described, a pressure sensor and its associated electronics are optically powered by a 20 mw laser and a photovoltaic cell via an optical fiber. The sensor is periodically interrogated and sends the measures obtained back to the central unit using an LED and a second fiber. The results obtained as well as the expected evolution will be described

  11. An In-depth Study on Semitransparent amorphous Silicon Sensors

    International Nuclear Information System (INIS)

    Fernandez, M. G.; Ferrando, A.; Josa, M. I.; Molinero, A.; Oller, J. C.; Arce, P.; Calvo, E.; Figueroa, C. F.; Garcia, N.; Rodrigo, T.; Vila, I.; Virto, A. L.

    1999-01-01

    Semitransparent amorphous silicon sensors have been proposed as the 2D positioning sensors for the link system of the CMS alignment: An in-depth study of the actual performance of these sensors is here reported. (Author) 8 refs

  12. Micro Coriolis mass flow sensor with integrated resistive pressure sensors

    NARCIS (Netherlands)

    Groenesteijn, Jarno; Alveringh, Dennis; Schut, Thomas; Wiegerink, Remco J.; Sparreboom, Wouter; Lötters, Joost Conrad

    2017-01-01

    We report on novel resistive pressure sensors, integrated on-chip at the inlet- and outlet-channels of a micro Coriolis mass flow sensor. The pressure sensors can be used to measure the pressure drop over the Coriolis sensor which can be used to compensate pressure-dependent behaviour that might

  13. Simulation and fabrication of carbon nanotubes field emission pressure sensors

    International Nuclear Information System (INIS)

    Qian Kaiyou; Chen Ting; Yan Bingyong; Lin Yangkui; Xu Dong; Sun Zhuo; Cai Bingchu

    2006-01-01

    A novel field emission pressure sensor has been achieved utilizing carbon nanotubes (CNTs) as the electron source. The sensor consists of the anode sensing film fabricated by wet etching process and multi-wall carbon nanotubes (MWNTs) cathode in the micro-vacuum chamber. MWNTs on the silicon substrate were grown by thermal CVD. The prototype pressure sensor has a measured sensitivity of about 0.17-0.77 nA/Pa (101-550 KPa). The work shows the potential use of CNTs-based field-emitter in microsensors, such as accelerometers and tactile sensors

  14. A novel SOI pressure sensor for high temperature application

    International Nuclear Information System (INIS)

    Li Sainan; Liang Ting; Wang Wei; Hong Yingping; Zheng Tingli; Xiong Jijun

    2015-01-01

    The silicon on insulator (SOI) high temperature pressure sensor is a novel pressure sensor with high-performance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper. The key factors including doping concentration and power are analyzed. The process of the sensor is designed with the critical process parameters set appropriately. The test result at room temperature and high temperature shows that nonlinear error below is 0.1%, and hysteresis is less than 0.5%. High temperature measuring results show that the sensor can be used for from room temperature to 350 °C in harsh environments. It offers a reference for the development of high temperature piezoresistive pressure sensors. (semiconductor devices)

  15. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  16. All-optical pressure sensor

    DEFF Research Database (Denmark)

    2014-01-01

    The present invention relates to an all-optical pressure sensor comprising a waveguide accommodating a distributed Bragg reflector. Pressure sensing can then be provided by utilizing effective index modulation of the waveguide and detection of a wavelength shift of light reflected from the Bragg...... reflector. Sound sensing may also be provided thereby having an all-optical microphone. One embodiment of the invention relates to an optical pressure sensor comprising at least one outer membrane and a waveguide, the waveguide comprising at least one core for confining and guiding light,at least one...... distributed Bragg reflector located in said at least one core, and at least one inner deflecting element forming at least a part of the core,wherein the pressure sensor is configured such that the geometry and/or dimension of the at least one core is changed when the at least one outer membrane is submitted...

  17. Flexible Sensors for Pressure Therapy: Effect of Substrate Curvature and Stiffness on Sensor Performance.

    Science.gov (United States)

    Khodasevych, Iryna; Parmar, Suresh; Troynikov, Olga

    2017-10-20

    Flexible pressure sensors are increasingly being used in medical and non-medical applications, and particularly in innovative health monitoring. Their efficacy in medical applications such as compression therapy depends on the accuracy and repeatability of their output, which in turn depend on factors such as sensor type, shape, pressure range, and conformability of the sensor to the body surface. Numerous researchers have examined the effects of sensor type and shape, but little information is available on the effect of human body parameters such as support surfaces' curvature and the stiffness of soft tissues on pressure sensing performance. We investigated the effects of body parameters on the performance of pressure sensors using a custom-made human-leg-like test setup. Pressure sensing parameters such as accuracy, drift and repeatability were determined in both static (eight hours continuous pressure) and dynamic (10 cycles of pressure application of 30 s duration) testing conditions. The testing was performed with a focus on compression therapy application for venous leg ulcer treatments, and was conducted in a low-pressure range of 20-70 mmHg. Commercially available sensors manufactured by Peratech and Sensitronics were used under various loading conditions to determine the influence of stiffness and curvature. Flat rigid, flat soft silicone and three cylindrical silicone surfaces of radii of curvature of 3.5 cm, 5.5 cm and 6.5 cm were used as substrates under the sensors. The Peratech sensor averaged 94% accuracy for both static and dynamic measurements on all substrates; the Sensitronics sensor averaged 88% accuracy. The Peratech sensor displayed moderate variations and the Sensitronics sensor large variations in output pressure readings depending on the underlying test surface, both of which were reduced markedly by individual pressure calibration for surface type. Sensor choice and need for calibration to surface type are important considerations for

  18. Silicon sensor technologies for ATLAS IBL upgrade

    CERN Document Server

    Grenier, P; The ATLAS collaboration

    2011-01-01

    New pixel sensors are currently under development for ATLAS Upgrades. The first upgrade stage will consist in the construction of a new pixel layer that will be installed in the detector during the 2013 LHC shutdown. The new layer (Insertable-B-Layer, IBL) will be inserted between the inner most layer of the current pixel detector and the beam pipe at a radius of 3.2cm. The expected high radiation levels require the use of radiation hard technology for both the front-end chip and the sensor. Two different pixel sensor technologies are envisaged for the IBL. The sensor choice will occur in July 2011. One option is developed by the ATLAS Planar Pixel Sensor (PPS) Collaboration and is based on classical n-in-n planar silicon sensors which have been used for the ATLAS Pixel detector. For the IBL, two changes were required: The thickness was reduced from 250 um to 200 um to improve the radiation hardness. In addition, so-called "slim edges" were designed to reduce the inactive edge of the sensors from 1100 um to o...

  19. Surface effects in segmented silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kopsalis, Ioannis

    2017-05-15

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO{sub 2} layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO{sub 2} and at the Si-SiO{sub 2} interface. In this thesis the surface radiation damage of the Si-SiO{sub 2} system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO{sub 2} of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface

  20. Surface effects in segmented silicon sensors

    International Nuclear Information System (INIS)

    Kopsalis, Ioannis

    2017-05-01

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface. In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

  1. Applications of pressure-sensitive dielectric elastomer sensors

    Science.gov (United States)

    Böse, Holger; Ocak, Deniz; Ehrlich, Johannes

    2016-04-01

    Dielectric elastomer sensors for the measurement of compression loads with high sensitivity are described. The basic design of the sensors exhibits two profiled surfaces between which an elastomer film is confined. All components of the sensor were prepared with silicone whose stiffness can be varied in a wide range. Depending on details of the sensor design, various effects contribute to the enhancement of the capacitance. The intermediate elastomer film is stretched upon compression and electrode layers on the elastomer profiles and in the elastomer film approach each other. Different designs of the pressure sensor give rise to very different sensor characteristics in terms of the dependence of electric capacitance on compression force. Due to their inherent flexibility, the pressure sensors can be used on compliant substrates such as seats or beds or on the human body. This gives rise to numerous possible applications. The contribution describes also some examples of possible sensor applications. A glove was equipped with various sensors positioned at the finger tips. When grabbing an object with the glove, the sensors can detect the gripping forces of the individual fingers with high sensitivity. In a demonstrator of the glove equipped with seven sensors, the capacitances representing the gripping forces are recorded on a display. In another application example, a lower limb prosthesis was equipped with a pressure sensor to detect the load on the remaining part of the leg and the load is displayed in terms of the measured capacitance. The benefit of such sensors is to detect an eventual overload in order to prevent possible pressure sores. A third example introduces a seat load sensor system based on four extended pressure sensor mats. The sensor system detects the load distribution of a person on the seat. The examples emphasize the high performance of the new pressure sensor technology.

  2. Porous Silicon Structures as Optical Gas Sensors

    Directory of Open Access Journals (Sweden)

    Igor A. Levitsky

    2015-08-01

    Full Text Available We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers are described for gas sensing with an emphasis on the device specificity, sensitivity and stability to the environment. Special attention is paid to multiparametric sensing and sensor array platforms as effective trends for the improvement of analyte classification and quantification. Mechanisms of gas physical and chemical sorption inside PSi mesopores and pores of PSi functional composites are discussed.

  3. Fixture For Mounting A Pressure Sensor

    Science.gov (United States)

    Cagle, Christopher M.

    1995-01-01

    Fixture for mounting pressure sensor in aerodynamic model simplifies task of removal and replacement of sensor in event sensor becomes damaged. Makes it unnecessary to dismantle model. Also minimizes any change in aerodynamic characteristics of model in event of replacement. Removable pressure sensor installed in fixture in wall of model. Wires from sensor pass through channel under surface.

  4. Micro-fabricated all optical pressure sensors

    DEFF Research Database (Denmark)

    Havreland, Andreas Spandet; Petersen, Søren Dahl; Østergaard, Christian

    2017-01-01

    Optical pressure sensors can operate in certain harsh application areas where the electrical pressure sensors cannot. However, the sensitivity is often not as good for the optical sensors. This work presents an all optical pressure sensor, which is fabricated by micro fabrication techniques, where...... the sensitivity can be tuned in the fabrication process. The developed sensor design, simplifies the fabrication process leading to a lower fabrication cost, which can make the all optical pressure sensors more competitive towards their electrical counterpart. The sensor has shown promising results and a linear...... pressure response has been measured with a sensitivity of 0.6nm/bar....

  5. Resistive pressure sensors integrated with a Coriolis mass flow sensor

    NARCIS (Netherlands)

    Alveringh, Dennis; Schut, Thomas; Wiegerink, Remco J.; Sparreboom, Wouter; Lötters, Joost Conrad

    2017-01-01

    We report on a novel resistive pressure sensor that is completely integrated with a Coriolis mass flow sensor on one chip, without the need for extra fabrication steps or different materials. Two pressure sensors are placed in-line with the Coriolis sensor without requiring any changes to the fluid

  6. Piezoresistive pressure sensor array for robotic skin

    Science.gov (United States)

    Mirza, Fahad; Sahasrabuddhe, Ritvij R.; Baptist, Joshua R.; Wijesundara, Muthu B. J.; Lee, Woo H.; Popa, Dan O.

    2016-05-01

    Robots are starting to transition from the confines of the manufacturing floor to homes, schools, hospitals, and highly dynamic environments. As, a result, it is impossible to foresee all the probable operational situations of robots, and preprogram the robot behavior in those situations. Among human-robot interaction technologies, haptic communication is an intuitive physical interaction method that can help define operational behaviors for robots cooperating with humans. Multimodal robotic skin with distributed sensors can help robots increase perception capabilities of their surrounding environments. Electro-Hydro-Dynamic (EHD) printing is a flexible multi-modal sensor fabrication method because of its direct printing capability of a wide range of materials onto substrates with non-uniform topographies. In past work we designed interdigitated comb electrodes as a sensing element and printed piezoresistive strain sensors using customized EHD printable PEDOT:PSS based inks. We formulated a PEDOT:PSS derivative ink, by mixing PEDOT:PSS and DMSO. Bending induced characterization tests of prototyped sensors showed high sensitivity and sufficient stability. In this paper, we describe SkinCells, robot skin sensor arrays integrated with electronic modules. 4x4 EHD-printed arrays of strain sensors was packaged onto Kapton sheets and silicone encapsulant and interconnected to a custom electronic module that consists of a microcontroller, Wheatstone bridge with adjustable digital potentiometer, multiplexer, and serial communication unit. Thus, SkinCell's electronics can be used for signal acquisition, conditioning, and networking between sensor modules. Several SkinCells were loaded with controlled pressure, temperature and humidity testing apparatuses, and testing results are reported in this paper.

  7. Fiber Optic Pressure Sensor Array, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — VIP Sensors proposes to develop a Fiber Optic Pressure Sensor Array System for measuring air flow pressure at multiple points on the skin of aircrafts for Flight...

  8. High pressure fiber optic sensor system

    Science.gov (United States)

    Guida, Renato; Xia, Hua; Lee, Boon K; Dekate, Sachin N

    2013-11-26

    The present application provides a fiber optic sensor system. The fiber optic sensor system may include a small diameter bellows, a large diameter bellows, and a fiber optic pressure sensor attached to the small diameter bellows. Contraction of the large diameter bellows under an applied pressure may cause the small diameter bellows to expand such that the fiber optic pressure sensor may measure the applied pressure.

  9. Pressure-Sensor Assembly Technique

    Science.gov (United States)

    Pruzan, Daniel A.

    2003-01-01

    Nielsen Engineering & Research (NEAR) recently developed an ultrathin data acquisition system for use in turbomachinery testing at NASA Glenn Research Center. This system integrates a microelectromechanical- systems- (MEMS-) based absolute pressure sensor [0 to 50 psia (0 to 345 kPa)], temperature sensor, signal-conditioning application-specific integrated circuit (ASIC), microprocessor, and digital memory into a package which is roughly 2.8 in. (7.1 cm) long by 0.75 in. (1.9 cm) wide. Each of these components is flip-chip attached to a thin, flexible circuit board and subsequently ground and polished to achieve a total system thickness of 0.006 in. (0.15 mm). Because this instrument is so thin, it can be quickly adhered to any surface of interest where data can be collected without disrupting the flow being investigated. One issue in the development of the ultrathin data acquisition system was how to attach the MEMS pressure sensor to the circuit board in a manner which allowed the sensor s diaphragm to communicate with the ambient fluid while providing enough support for the chip to survive the grinding and polishing operations. The technique, developed by NEAR and Jabil Technology Services Group (San Jose, CA), is described below. In the approach developed, the sensor is attached to the specially designed circuit board, see Figure 1, using a modified flip-chip technique. The circular diaphragm on the left side of the sensor is used to actively measure the ambient pressure, while the diaphragm on the right is used to compensate for changes in output due to temperature variations. The circuit board is fabricated with an access hole through it so that when the completed system is installed onto a wind tunnel model (chip side down), the active diaphragm is exposed to the environment. After the sensor is flip-chip attached to the circuit board, the die is underfilled to support the chip during the subsequent grinding and polishing operations. To prevent this

  10. Implantable blood pressure sensor for analyzing elasticity in arteries

    Science.gov (United States)

    Franco-Ayala, Marco; Martínez-Piñón, Fernando; Reyes-Barranca, Alfredo; Sánchez de la Peña, Salvador; Álvarez-Chavez, José A.

    2009-03-01

    MEMS technology could be an option for the development of a pressure sensor which allows the monitoring of several electronic signals in humans. In this work, a comparison is made between the typical elasticity curves of several arteries in the human body and the elasticity obtained for MEMS silicon microstructures such as membranes and cantilevers employing Finite Element analysis tools. The purpose is to identify which types of microstructures are mechanically compatible with human arteries. The goal is to integrate a blood pressure sensor which can be implanted in proximity with an artery. The expected benefits for this type of sensor are mainly to reduce the problems associated with the use of bulk devices through the day and during several days. Such a sensor could give precise blood pressure readings in a continuous or periodic form, i.e. information that is especially important for some critical cases of hypertension patients.

  11. Pressure sensor based on distributed temperature sensing

    NARCIS (Netherlands)

    van Baar, J.J.J.; Wiegerink, Remco J.; Berenschot, Johan W.; Lammerink, Theodorus S.J.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt

    2002-01-01

    A differential pressure sensor has been realized with thermal readout. The thermal readout allows simultaneous measurement of the membrane deflection due to a pressure difference and measurement of the absolute pressure by operating the structure as a Pirani pressure sensor. The measuring of the

  12. Electrical properties of pressure quenched silicon by thermal spraying

    International Nuclear Information System (INIS)

    Tan, S.Y.; Gambino, R.J.; Sampath, S.; Herman, H.

    2007-01-01

    High velocity thermal spray deposition of polycrystalline silicon film onto single crystal substrates, yields metastable high pressure forms of silicon in nanocrystalline form within the deposit. The phases observed in the deposit include hexagonal diamond-Si, R-8, BC-8 and Si-IX. The peculiar attribute of this transformation is that it occurs only on orientation silicon substrate. The silicon deposits containing the high pressure phases display a substantially higher electrical conductivity. The resistivity profile of the silicon deposit containing shock induced metastable silicon phases identified by X-ray diffraction patterns. The density of the pressure induced polymorphic silicon is higher at deposit/substrate interface. A modified two-layer model is presented to explain the resistivity of the deposit impacted by the pressure induced polymorphic silicon generated by the thermal spraying process. The pressure quenched silicon deposits on the p - silicon substrate, with or without metastable phases, display the barrier potential of about 0.72 eV. The measured hall mobility value of pressure quenched silicon deposits is in the range of polycrystalline silicon. The significance of this work lies in the fact that the versatility of thermal spray may enable applications of these high pressure forms of silicon

  13. Gamma and Neutron Irradiation of Semitransparent Amorphous Silicon Sensors

    International Nuclear Information System (INIS)

    Carabe, J.; Fernandez, M. G.; Ferrando, A.; Fuentes, J.; Gandia, J.; Josa, M. I.; Molinero, A.; Oller, J. C.; Arce, P.; Calvo, E.; Figueroa, C. F.; Garcia, N.; Matorras, F.; Rodrigo, T.; Vila, I.; Virto, A. L.; Fenyvesi, A.; Molnar, J.; Sohler, D.

    1999-12-01

    Semitransparent amorphous silicon sensors are key elements for laser light 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in very hard radiation environment. We have irradiated with gammas, up to 10 Mrad, and neutrons, up to 10 ''14 cm''-2, two different type of sensors and measured their change in performance. (Author) 10 refs

  14. Carbon nanotube temperature and pressure sensors

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, Ilia N.; Geohegan, David B.

    2017-09-12

    The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

  15. Carbon nanotube temperature and pressure sensors

    Science.gov (United States)

    Ivanov, Ilia N; Geohegan, David Bruce

    2013-10-29

    The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

  16. Intelligent pressure measurement in multiple sensor arrays

    International Nuclear Information System (INIS)

    Matthews, C.A.

    1995-01-01

    Pressure data acquisition has typically consisted of a group of sensors scanned by an electronic or mechanical multiplexer. The data accuracy was dependent upon the temperature stability of the sensors. This paper describes a new method of pressure measurement that combines individual temperature compensated pressure sensors, a microprocessor, and an A/D converter in one module. Each sensor has its own temperature characteristics stored in a look-up table to minimize sensor thermal errors. The result is an intelligent pressure module that can output temperature compensated engineering units over an Ethernet interface. Calibration intervals can be dramatically extended depending upon system accuracy requirements and calibration techniques used

  17. Organic Electroluminescent Sensor for Pressure Measurement

    Directory of Open Access Journals (Sweden)

    Tomohide Niimi

    2012-10-01

    Full Text Available We have proposed a novel concept of a pressure sensor called electroluminescent pressure sensor (ELPS based on oxygen quenching of electroluminescence. The sensor was fabricated as an organic light-emitting device (OLED with phosphorescent dyes whose phosphorescence can be quenched by oxygenmolecules, and with a polymer electrode which permeates oxygen molecules. The sensor was a single-layer OLED with Platinum (II octaethylporphine (PtOEP doped into poly(vinylcarbazole (PVK as an oxygen sensitive emissive layer and poly(3,4-ethylenedioxythiophene mixed with poly(styrenesulfonate (PEDOT:PSS as an oxygen permeating polymer anode. The pressure sensitivity of the fabricated ELPS sample was equivalent to that of the sensor excited by an illumination light source. Moreover, the pressure sensitivity of the sensor is equivalent to that of conventional pressure-sensitive paint (PSP, which is an optical pressure sensor based on photoluminescence.

  18. Pressure sensor using liquid crystals

    Science.gov (United States)

    Parmar, Devendra S. (Inventor); Holmes, Harlan K. (Inventor)

    1994-01-01

    A pressure sensor includes a liquid crystal positioned between transparent, electrically conductive films (18 and 20), that are biased by a voltage (V) which induces an electric field (E) that causes the liquid crystal to assume a first state of orientation. Application of pressure (P) to a flexible, transparent film (24) causes the conductive film (20) to move closer to or farther from the conductive film (18), thereby causing a change in the electric field (E'(P)) which causes the liquid crystal to assume a second state of orientation. Polarized light (P.sub.1) is directed into the liquid crystal and transmitted or reflected to an analyzer (A or 30). Changes in the state of orientation of the liquid crystal induced by applied pressure (P) result in a different light intensity being detected at the analyzer (A or 30) as a function of the applied pressure (P). In particular embodiments, the liquid crystal is present as droplets (10) in a polymer matrix (12) or in cells (14) in a polymeric or dielectric grid (16) material in the form of a layer (13) between the electrically conductive films (18 and 20). The liquid crystal fills the open wells in the polymer matrix (12) or grid (16) only partially.

  19. Distributed pressure sensors for a urethral catheter.

    Science.gov (United States)

    Ahmadi, Mahdi; Rajamani, Rajesh; Timm, Gerald; Sezen, A S

    2015-01-01

    A flexible strip that incorporates multiple pressure sensors and is capable of being fixed to a urethral catheter is developed. The urethral catheter thus instrumented will be useful for measurement of pressure in a human urethra during urodynamic testing in a clinic. This would help diagnose the causes of urinary incontinence in patients. Capacitive pressure sensors are fabricated on a flexible polyimide-copper substrate using surface micromachining processes and alignment/assembly of the top and bottom portions of the sensor strip. The developed sensor strip is experimentally evaluated in an in vitro test rig using a pressure chamber. The sensor strip is shown to have adequate sensitivity and repeatability. While the calibration factors for the sensors on the strip vary from one sensor to another, even the least sensitive sensor has a resolution better than 0.1 psi.

  20. Microfabricated pressure and shear stress sensors

    Science.gov (United States)

    Liu, Chang (Inventor); Chen, Jack (Inventor); Engel, Jonathan (Inventor)

    2009-01-01

    A microfabricated pressure sensor. The pressure sensor comprises a raised diaphragm disposed on a substrate. The diaphragm is configured to bend in response to an applied pressure difference. A strain gauge of a conductive material is coupled to a surface of the raised diaphragm and to at least one of the substrate and a piece rigidly connected to the substrate.

  1. Calculation Of Pneumatic Attenuation In Pressure Sensors

    Science.gov (United States)

    Whitmore, Stephen A.

    1991-01-01

    Errors caused by attenuation of air-pressure waves in narrow tubes calculated by method based on fundamental equations of flow. Changes in ambient pressure transmitted along narrow tube to sensor. Attenuation of high-frequency components of pressure wave calculated from wave equation derived from Navier-Stokes equations of viscous flow in tube. Developed to understand and compensate for frictional attenuation in narrow tubes used to connect aircraft pressure sensors with pressure taps on affected surfaces.

  2. Research on pressure sensors for biomedical instruments

    Science.gov (United States)

    Angell, J. B.

    1975-01-01

    The development of a piezo-resistive pressure transducer is discussed suitable for recording pressures typically encountered in biomedical applications. The pressure transducer consists of a thin silicon diaphragm containing four strain-sensitive resistors, and is fabricated using silicon monolithic integrated-circuit technology. The pressure transducers can be as small as 0.7 mm outer diameter, and are, as a result, suitable for mounting at the tip of a catheter. Pressure-induced stress in the diaphragm is sensed by the resistors, which are interconnected to form a Wheatstone bridge.

  3. Basic opto-electronics on silicon for sensor applications

    NARCIS (Netherlands)

    Joppe, J.L.; Bekman, H.H.P.Th.; de Krijger, A.J.T.; Albers, H.; Chalmers, J.; Chalmers, J.D.; Holleman, J.; Ikkink, T.J.; Ikkink, T.; van Kranenburg, H.; Zhou, M.-J.; Zhou, Ming-Jiang; Lambeck, Paul

    1994-01-01

    A general platform for integrated opto-electronic sensor systems on silicon is proposed. The system is based on a hybridly integrated semiconductor laser, ZnO optical waveguides and monolithic photodiodes and electronic circuiry.

  4. A theoretical approach to photosynthetically active radiation silicon sensor

    International Nuclear Information System (INIS)

    Tamasi, M.J.L.; Martínez Bogado, M.G.

    2013-01-01

    This paper presents a theoretical approach for the development of low cost radiometers to measure photosynthetically active radiation (PAR). Two alternatives are considered: a) glass optical filters attached to a silicon sensor, and b) dielectric coating on a silicon sensor. The devices proposed are based on radiometers previously developed by the Argentine National Atomic Energy Commission. The objective of this work is to adapt these low cost radiometers to construct reliable instruments for measuring PAR. The transmittance of optical filters and sensor response have been analyzed for different dielectric materials, number of layers deposited, and incidence angles. Uncertainties in thickness of layer deposition were evaluated. - Highlights: • Design of radiometers to measure photosynthetically active radiation • The study has used a filter and a Si sensor to modify spectral response. • Dielectric multilayers on glass and silicon sensor • Spectral response related to different incidence angles, materials and spectra

  5. Evaluation of high temperature pressure sensors

    International Nuclear Information System (INIS)

    Choi, In-Mook; Woo, Sam-Yong; Kim, Yong-Kyu

    2011-01-01

    It is becoming more important to measure the pressure in high temperature environments in many industrial fields. However, there is no appropriate evaluation system and compensation method for high temperature pressure sensors since most pressure standards have been established at room temperature. In order to evaluate the high temperature pressure sensors used in harsh environments, such as high temperatures above 250 deg. C, a specialized system has been constructed and evaluated in this study. The pressure standard established at room temperature is connected to a high temperature pressure sensor through a chiller. The sensor can be evaluated in conditions of changing standard pressures at constant temperatures and of changing temperatures at constant pressures. According to the evaluation conditions, two compensation methods are proposed to eliminate deviation due to sensitivity changes and nonlinear behaviors except thermal hysteresis.

  6. Evolution of silicon sensor technology in particle physics

    CERN Document Server

    Hartmann, Frank

    2017-01-01

    This informative monograph describes the technological evolution of silicon detectors and their impact on high energy particle physics. The author here marshals his own first-hand experience in the development and also the realization of the DELPHI, CDF II and the CMS tracking detector. The basic principles of small strip- and pixel-detectors are presented and also the final large-scale applications. The Evolution of Silicon Detector Technology acquaints readers with the manifold challenges involving the design of sensors and pushing this technology to the limits. The expert will find critical information that is so far only available in various slide presentation scattered over the world wide web. This practical introduction of silicon sensor technology and its day to day life in the lab also offers many examples to illustrate problems and their solutions over several detector generations. The new edition gives a detailed overview of the silicon sensor technology used at the LHC, from basic principles to act...

  7. Assessment of fiber optic pressure sensors

    International Nuclear Information System (INIS)

    Hashemian, H.M.; Black, C.L.; Farmer, J.P.

    1995-04-01

    This report presents the results of a six-month Phase 1 study to establish the state-of-the-art in fiber optic pressure sensing and describes the design and principle of operation of various fiber optic pressure sensors. This study involved a literature review, contact with experts in the field, an industrial survey, a site visit to a fiber optic sensor manufacturer, and laboratory testing of a fiber optic pressure sensor. The laboratory work involved both static and dynamic performance tests. In addition, current requirements for environmental and seismic qualification of sensors for nuclear power plants were reviewed to determine the extent of the qualification tests that fiber optic pressure sensors may have to meet before they can be used in nuclear power plants. This project has concluded that fiber optic pressure sensors are still in the research and development stage and only a few manufacturers exist in the US and abroad which supply suitable fiber optic pressure sensors for industrial applications. Presently, fiber optic pressure sensors are mostly used in special applications for which conventional sensors are not able to meet the requirements

  8. Effects of varying oxygen partial pressure on molten silicon-ceramic substrate interactions

    Science.gov (United States)

    Ownby, D. P.; Barsoum, M. W.

    1980-01-01

    The silicon sessile drop contact angle was measured on hot pressed silicon nitride, silicon nitride coated on hot pressed silicon nitride, silicon carbon coated on graphite, and on Sialon to determine the degree to which silicon wets these substances. The post-sessile drop experiment samples were sectioned and photomicrographs were taken of the silicon-substrate interface to observe the degree of surface dissolution and degradation. Of these materials, silicon did not form a true sessile drop on the SiC on graphite due to infiltration of the silicon through the SiC coating, nor on the Sialon due to the formation of a more-or-less rigid coating on the liquid silicon. The most wetting was obtained on the coated Si3N4 with a value of 42 deg. The oxygen concentrations in a silicon ribbon furnace and in a sessile drop furnace were measured using the protable thoria-yttria solid solution electrolyte oxygen sensor. Oxygen partial pressures of 10 to the minus 7 power atm and 10 to the minus 8 power atm were obtained at the two facilities. These measurements are believed to represent nonequilibrium conditions.

  9. Microoptomechanical sensor for intracranial pressure monitoring

    International Nuclear Information System (INIS)

    Andreeva, A V; Luchinin, V V; Lutetskiy, N A; Sergushichev, A N

    2014-01-01

    The main idea of this research is the development of microoptomechanical sensor for intracranial pressure monitoring. Currently, the authors studied the scientific and technical knowledge in this field, as well as develop and test a prototype of microoptomechanical sensor for intracranial pressure (ICP) monitoring

  10. Inertia compensated force and pressure sensors

    Energy Technology Data Exchange (ETDEWEB)

    Bill, B.; Engeler, P.; Gossweiler, C. [Kistler Instrumente AG, Winterthur (Switzerland)

    2001-07-01

    Any moving structure is affected by inertial effects. In case of force and pressure sensors, inertial effects cause measurement errors. The paper deals with novel signal conditioning methods and mechanical design features to minimize inertial effects. A novel solution for passive compensation of pressure sensors is presented. (orig.)

  11. Cryogenic Multichannel Pressure Sensor With Electronic Scanning

    Science.gov (United States)

    Hopson, Purnell, Jr.; Chapman, John J.; Kruse, Nancy M. H.

    1994-01-01

    Array of pressure sensors operates reliably and repeatably over wide temperature range, extending from normal boiling point of water down to boiling point of nitrogen. Sensors accurate and repeat to within 0.1 percent. Operate for 12 months without need for recalibration. Array scanned electronically, sensor readings multiplexed and sent to desktop computer for processing and storage. Used to measure distributions of pressure in research on boundary layers at high Reynolds numbers, achieved by low temperatures.

  12. Graphene Squeeze-Film Pressure Sensors.

    Science.gov (United States)

    Dolleman, Robin J; Davidovikj, Dejan; Cartamil-Bueno, Santiago J; van der Zant, Herre S J; Steeneken, Peter G

    2016-01-13

    The operating principle of squeeze-film pressure sensors is based on the pressure dependence of a membrane's resonance frequency, caused by the compression of the surrounding gas which changes the resonator stiffness. To realize such sensors, not only strong and flexible membranes are required, but also minimization of the membrane's mass is essential to maximize responsivity. Here, we demonstrate the use of a few-layer graphene membrane as a squeeze-film pressure sensor. A clear pressure dependence of the membrane's resonant frequency is observed, with a frequency shift of 4 MHz between 8 and 1000 mbar. The sensor shows a reproducible response and no hysteresis. The measured responsivity of the device is 9000 Hz/mbar, which is a factor 45 higher than state-of-the-art MEMS-based squeeze-film pressure sensors while using a 25 times smaller membrane area.

  13. Demonstration of SiC Pressure Sensors at 750 C

    Science.gov (United States)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2014-01-01

    We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750 C and in the process confirmed the existence of strain sensitivity recovery with increasing temperature above 400 C, eventually achieving near or up to 100% of the room temperature values at 750 C. This strain sensitivity recovery phenomenon in 4H-SiC is uncharacteristic of the well-known monotonic decrease in strain sensitivity with increasing temperature in silicon piezoresistors. For the three sensors tested, the room temperature full-scale output (FSO) at 200 psig ranged between 29 and 36 mV. Although the FSO at 400 C dropped by about 60%, full recovery was achieved at 750 C. This result will allow the operation of SiC pressure sensors at higher temperatures, thereby permitting deeper insertion into the engine combustion chamber to improve the accurate quantification of combustor dynamics.

  14. Experience on 3D silicon sensors for ATLAS IBL

    International Nuclear Information System (INIS)

    Darbo, G.

    2015-01-01

    3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high energy physics experiments. This type of sensors has been developed for the Insertable B-Layer (IBL), an additional pixel layer that has been installed in ATLAS during the present shutdown of the LHC collider at CERN. It is presented here the experience in designing, testing and qualifying sensors and detector modules that have been used to equip part of the IBL. Based on the gained experience with 3D silicon sensors for the ATLAS IBL, we discuss possible new developments for the upgrade of ATLAS and CMS at the high-luminosity LHC (HL-LHC)

  15. LPG based all plastic pressure sensor

    DEFF Research Database (Denmark)

    Bundalo, Ivan-Lazar; Lwin, R.; Leon-Saval, S.

    2015-01-01

    A prototype all-plastic pressure sensor is presented and characterized for potential use as an endoscope. The sensor is based on Long Period Gratings (LPG) inscribed with a CO2 laser in 6-ring microstructured PMMA fiber. Through a latex coated, plastic 3D-printed transducer pod, external pressure...... is converted to longitudinal elongation of the pod and therefore of the fiber containing the LPG. The sensor has been characterised for pressures of up to 160 mBar in an in-house built pressure chamber. Furthermore, the influence of the fiber prestrain, fiber thickness and the effect of different glues...

  16. Acceleration sensitivity of micromachined pressure sensors

    Science.gov (United States)

    August, Richard; Maudie, Theresa; Miller, Todd F.; Thompson, Erik

    1999-08-01

    Pressure sensors serve a variety of automotive applications, some which may experience high levels of acceleration such as tire pressure monitoring. To design pressure sensors for high acceleration environments it is important to understand their sensitivity to acceleration especially if thick encapsulation layers are used to isolate the device from the hostile environment in which they reside. This paper describes a modeling approach to determine their sensitivity to acceleration that is very general and is applicable to different device designs and configurations. It also describes the results of device testing of a capacitive surface micromachined pressure sensor at constant acceleration levels from 500 to 2000 g's.

  17. Packaged Capacitive Pressure Sensor System for Aircraft Engine Health Monitoring

    Science.gov (United States)

    Scardelletti, Maximilian C.; Zorman, Christian A.

    2016-01-01

    This paper describes the development of a packaged silicon carbide (SiC) based MEMS pressure sensor system designed specifically for a conventional turbofan engine. The electronic circuit is based on a Clapp-type oscillator that incorporates a 6H-SiC MESFET, a SiCN MEMS capacitive pressure sensor, titanate MIM capacitors, wirewound inductors, and thick film resistors. The pressure sensor serves as the capacitor in the LC tank circuit, thereby linking pressure to the resonant frequency of the oscillator. The oscillator and DC bias circuitry were fabricated on an alumina substrate and secured inside a metal housing. The packaged sensing system reliably operates at 0 to 350 psi and 25 to 540C. The system has a pressure sensitivity of 6.8 x 10E-2 MHzpsi. The packaged system shows negligible difference in frequency response between 25 and 400C. The fully packaged sensor passed standard benchtop acceptance tests and was evaluated on a flight-worthy engine.

  18. A portable readout system for silicon microstrip sensors

    International Nuclear Information System (INIS)

    Marco-Hernandez, Ricardo

    2010-01-01

    This system can measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256. The system is able to operate with different types (p- and n-type) and different sizes (up to 3 cm 2 ) of microstrip silicon sensors, both irradiated and non-irradiated. Heavily irradiated sensors will be used at the Super Large Hadron Collider, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the Super Large Hadron Collider operating conditions. The system has two main parts: a hardware part and a software part. The hardware part acquires the sensor signals either from external trigger inputs, in case of a radioactive source setup is used, or from a synchronised trigger output generated by the system, if a laser setup is used. The software controls the system and processes the data acquired from the sensors in order to store it in an adequate format. The main characteristics of the system are described. Results of measurements acquired with n- and p-type detectors using both the laser and the radioactive source setup are also presented and discussed.

  19. Tests Of Array Of Flush Pressure Sensors

    Science.gov (United States)

    Larson, Larry J.; Moes, Timothy R.; Siemers, Paul M., III

    1992-01-01

    Report describes tests of array of pressure sensors connected to small orifices flush with surface of 1/7-scale model of F-14 airplane in wind tunnel. Part of effort to determine whether pressure parameters consisting of various sums, differences, and ratios of measured pressures used to compute accurately free-stream values of stagnation pressure, static pressure, angle of attack, angle of sideslip, and mach number. Such arrays of sensors and associated processing circuitry integrated into advanced aircraft as parts of flight-monitoring and -controlling systems.

  20. HOPG/ZnO/HOPG pressure sensor

    Science.gov (United States)

    Jahangiri, Mojtaba; Yousefiazari, Ehsan; Ghalamboran, Milad

    2017-12-01

    Pressure sensor is one of the most commonly used sensors in the research laboratories and industries. These are generally categorized in three different classes of absolute pressure sensors, gauge pressure sensors, and differential pressure sensors. In this paper, we fabricate and assess the pressure sensitivity of the current vs. voltage diagrams in a graphite/ZnO/graphite structure. Zinc oxide layers are deposited on highly oriented pyrolytic graphite (HOPG) substrates by sputtering a zinc target under oxygen plasma. The top electrode is also a slice of HOPG which is placed on the ZnO layer and connected to the outside electronic circuits. By recording the I-V characteristics of the device under different forces applied to the top HOPG electrode, the pressure sensitivity is demonstrated; at the optimum biasing voltage, the device current changes 10 times upon changing the pressure level on the top electrode by 20 times. Repeatability and reproducibility of the observed effect is studied on the same and different samples. All the materials used for the fabrication of this pressure sensor are biocompatible, the fabricated device is anticipated to find potential applications in biomedical engineering.

  1. Self-correcting electronically scanned pressure sensor

    Science.gov (United States)

    Gross, C. (Inventor)

    1983-01-01

    A multiple channel high data rate pressure sensing device is disclosed for use in wind tunnels, spacecraft, airborne, process control, automotive, etc., pressure measurements. Data rates in excess of 100,000 measurements per second are offered with inaccuracies from temperature shifts less than 0.25% (nominal) of full scale over a temperature span of 55 C. The device consists of thirty-two solid state sensors, signal multiplexing electronics to electronically address each sensor, and digital electronic circuitry to automatically correct the inherent thermal shift errors of the pressure sensors and their associated electronics.

  2. High-temperature fiber optic pressure sensor

    Science.gov (United States)

    Berthold, J. W.

    1984-01-01

    Attention is given to a program to develop fiber optic methods to measure diaphragm deflection. The end application is intended for pressure transducers capable of operating to 540 C. In this paper are reported the results of a laboratory study to characterize the performance of the fiber-optic microbend sensor. The data presented include sensitivity and spring constant. The advantages and limitations of the microbend sensor for static pressure measurement applications are described. A proposed design is presented for a 540 C pressure transducer using the fiber optic microbend sensor.

  3. Thermoelectric Control Of Temperatures Of Pressure Sensors

    Science.gov (United States)

    Burkett, Cecil G., Jr.; West, James W.; Hutchinson, Mark A.; Lawrence, Robert M.; Crum, James R.

    1995-01-01

    Prototype controlled-temperature enclosure containing thermoelectric devices developed to house electronically scanned array of pressure sensors. Enclosure needed because (1) temperatures of transducers in sensors must be maintained at specified set point to ensure proper operation and calibration and (2) sensors sometimes used to measure pressure in hostile environments (wind tunnels in original application) that are hotter or colder than set point. Thus, depending on temperature of pressure-measurement environment, thermoelectric devices in enclosure used to heat or cool transducers to keep them at set point.

  4. Measurement of delta-rays in ATLAS silicon sensors

    CERN Document Server

    The ATLAS collaboration

    2013-01-01

    In the inner detector of the ATLAS experiment at the LHC, $\\delta$-rays originating from particle interactions in the silicon sensors may cause additional hit channels. A method for identifying silicon hit clusters that are enlarged due to the emission of a $\\delta$-ray is presented. Using pp collision data the expectation is confirmed that the $\\delta$-ray production rate depends linearly on the path length of the particle in silicon, independently of layer radius and detector technology. The range of the $\\delta$-rays, which is a property of the material and should not depend on anything else, is indeed found to be constant as a function of detector layer, path length in silicon and momentum of the particle traversing the silicon. As a by-product of this analysis a method is proposed that could correct for the effect of these $\\delta$-rays, and this could be used to improve track reconstruction.

  5. A carbon nanotube-based pressure sensor

    International Nuclear Information System (INIS)

    Karimov, Kh S; Saleem, M; Khan, Adam; Qasuria, T A; Mateen, A; Karieva, Z M

    2011-01-01

    In this study, a carbon nanotube (CNT)-based Al/CNT/Al pressure sensor was designed, fabricated and investigated. The sensor was fabricated by depositing CNTs on an adhesive elastic polymer tape and placing this in an elastic casing. The diameter of multiwalled nanotubes varied between 10 and 30 nm. The nominal thickness of the CNT layers in the sensors was in the range ∼300-430 μm. The inter-electrode distance (length) and the width of the surface-type sensors were in the ranges 4-6 and 3-4 mm, respectively. The dc resistance of the sensors decreased 3-4 times as the pressure was increased up to 17 kN m -2 . The resistance-pressure relationships were simulated.

  6. FEM Simulation of Influence of Protective Encapsulation on MEMS Pressure Sensor

    DEFF Research Database (Denmark)

    Yao, Qingshan; Janting, Jakob; Branebjerg, Jens

    2003-01-01

    The objective of the work is to evaluate the feasibility of packaging a MEMS silicon pressure sensor by using either a polymer encapsulation or a combination of a polymer encapsulation and a metallic protection Membrane (fig. 1). The potential application of the protected sensor is for harsh...... environments. Several steps of simulation are carried out:1) Comparisons of the sensitivities are made among the non-encapsulated silicon sensor, the polymer encapsulated and polymer with metal encapsulated sensor. This is for evaluating whether the encapsulating materials reduce the pressure sensitivity...... whether the metallic membrane / coating will peel off when applying the maximum pressure, which is 4000 bar leading to high shear stress between the metallic membrane and the polymer encapsulation material.3) Thermal calculations are made to evaluate the influence of the environment on the packaged sensor...

  7. Low-Cost Fiber Optic Pressure Sensor

    Science.gov (United States)

    Sheem, Sang K.

    2003-07-22

    The size and cost of fabricating fiber optic pressure sensors is reduced by fabricating the membrane of the sensor in a non-planar shape. The design of the sensors may be made in such a way that the non-planar membrane becomes a part of an air-tight cavity, so as to make the membrane resilient due to the air-cushion effect of the air-tight cavity. Such non-planar membranes are easier to make and attach.

  8. High Temperature Characterization of Ceramic Pressure Sensors

    National Research Council Canada - National Science Library

    Fonseca, Michael A; English, Jennifer M; Von Arx, Martin; Allen, Mark G

    2001-01-01

    This work reports functional wireless ceramic micromachined pressure sensors operating at 450 C, with demonstrated materials and readout capability indicating potential extension to temperatures in excess of 600 C...

  9. Wave effects on a pressure sensor

    Digital Repository Service at National Institute of Oceanography (India)

    Joseph, A.; DeSa, E; Desa, E; McKeown, J.; Peshwe, V.B.

    Wave flume experiments indicated that for waves propagating on quiescent waters the sensor's performance improved (i.e. the difference Delta P between the average hydrostatic and measured pressures was small and positive) when the inlet...

  10. Bladder pressure sensors in an animal model

    NARCIS (Netherlands)

    Koldewijn, E. L.; van Kerrebroeck, P. E.; Schaafsma, E.; Wijkstra, H.; Debruyne, F. M.; Brindley, G. S.

    1994-01-01

    Urinary incontinence due to detrusor hyperreflexia might be inhibited on demand if changes in bladder pressure could be detected by sensors and transferred into pudendal nerve electrostimulation. The aim of this study is to investigate how the bladder wall reacts on different sensor implants.

  11. Silicon microring refractometric sensor for atmospheric CO(2) gas monitoring.

    Science.gov (United States)

    Mi, Guangcan; Horvath, Cameron; Aktary, Mirwais; Van, Vien

    2016-01-25

    We report a silicon photonic refractometric CO(2) gas sensor operating at room temperature and capable of detecting CO(2) gas at atmospheric concentrations. The sensor uses a novel functional material layer based on a guanidine polymer derivative, which is shown to exhibit reversible refractive index change upon absorption and release of CO(2) gas molecules, and does not require the presence of humidity to operate. By functionalizing a silicon microring resonator with a thin layer of the polymer, we could detect CO(2) gas concentrations in the 0-500ppm range with a sensitivity of 6 × 10(-9) RIU/ppm and a detection limit of 20ppm. The microring transducer provides a potential integrated solution in the development of low-cost and compact CO(2) sensors that can be deployed as part of a sensor network for accurate environmental monitoring of greenhouse gases.

  12. Cantilever arrayed blood pressure sensor for arterial applanation tonometry.

    Science.gov (United States)

    Lee, Byeungleul; Jeong, Jinwoo; Kim, Jinseok; Kim, Bonghwan; Chun, Kukjin

    2014-03-01

    The authors developed a cantilever-arrayed blood pressure sensor array fabricated by (111) silicon bulk-micromachining for the non-invasive and continuous measurement of blood pressure. The blood pressure sensor measures the blood pressure based on the change in the resistance of the piezoresistor on a 5-microm-thick-arrayed perforated membrane and 20-microm-thick metal pads. The length and the width of the unit membrane are 210 and 310 microm, respectively. The width of the insensible zone between the adjacent units is only 10 microm. The resistance change over contact force was measured to verify the performance. The good linearity of the result confirmed that the polydimethylsiloxane package transfers the forces appropriately. The measured sensitivity was about 4.5%/N. The maximum measurement range and the resolution of the fabricated blood pressure sensor were greater than 900 mmHg (= 120 kPa) and less than 1 mmHg (= 133.3 Pa), respectively.

  13. Performance of the PHOBOS silicon sensors

    CERN Document Server

    Decowski, M P; Baker, M D; Barton, D S; Betts, R R; Bindel, R; Budzanowski, A; Busza, W; Carroll, A; García, E; George, N; Gulbrandsen, K H; Gushue, S; Halliwell, C; Hamblen, J; Heintzelman, G A; Henderson, C; Holynski, R; Hofman, D J; Holzman, B; Johnson, E; Kane, J L; Katzy, J; Khan, N; Kucewicz, W; Kulinich, P; Lin, W T; Manly, S; McLeod, D; Michalowski, J; Mignerey, A C; Mülmenstädt, J; Nouicer, R; Olszewski, A; Pak, R; Park, I C; Pernegger, H; Reed, C; Remsberg, L P; Reuter, M; Roland, C; Roland, G; Rosenberg, L J; Sarin, P; Sawicki, P; Skulski, W; Steadman, S G; Stephans, G S F; Steinberg, P; Stodulski, M; Sukhanov, A; Tang, J L; Teng, R; Trzupek, A; Vale, C; Nieuwenhuizen, G J; Verdier, R; Wadsworth, B; Wolfs, F L H; Wosiek, B; Wozniak, K; Wuosmaa, A H; Wyslouch, B

    2002-01-01

    The PHOBOS detector is designed to study the physics of Au+Au collisions at the Relativistic Heavy Ion Collider. The detector is almost entirely made of silicon pad detectors and was fully operational during the first year of operation. The detector is described, and key performance characteristics are summarized.

  14. Silicon Nanowire Field-effect Chemical Sensor

    NARCIS (Netherlands)

    Chen, S.

    2011-01-01

    This thesis describes the work that has been done on the project “Design and optimization of silicon nanowire for chemical sensing‿, including Si-NW fabrication, electrical/electrochemical modeling, the application as ISFET, and the build-up of Si- NW/LOC system for automatic sample delivery. A

  15. Performance of the PHOBOS silicon sensors

    Science.gov (United States)

    Decowski, M. P.; Back, B. B.; Baker, M. D.; Barton, D. S.; Betts, R. R.; Bindel, R.; Budzanowski, A.; Busza, W.; Carroll, A.; Garcia, E.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Heintzelman, G. A.; Henderson, C.; Hołyński, R.; Hofman, D. J.; Holzman, B.; Johnson, E.; Kane, J. L.; Katzy, J.; Khan, N.; Kucewicz, W.; Kulinich, P.; Lin, W. T.; Manly, S.; McLeod, D.; Michałowski, J.; Mignerey, A. C.; Mülmenstädt, J.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Remsberg, L. P.; Reuter, M.; Roland, C.; Roland, G.; Rosenberg, L.; Sarin, P.; Sawicki, P.; Skulski, W.; Steadman, S. G.; Stephans, G. S. F.; Steinberg, P.; Stodulski, M.; Sukhanov, A.; Tang, J.-L.; Teng, R.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Wadsworth, B.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wuosmaa, A. H.; Wysłouch, B.

    2002-02-01

    The PHOBOS detector is designed to study the physics of Au+Au collisions at the Relativistic Heavy Ion Collider. The detector is almost entirely made of silicon pad detectors and was fully operational during the first year of operation. The detector is described, and key performance characteristics are summarized.

  16. Close up of the pick and place tool carrying a dummy silicon sensor.

    CERN Multimedia

    Bernd Surrow

    1999-01-01

    The gantry positioning head contains a vacuum pick-up system thatallows several different pick-up tools to be used. This one isdesigned to pick up the silicon sensors. The pick-up tool containsa pressure sensitive contact which can stop the motion of the machine when the tool touches a fixed object. The shiny cylinderis the end of the microscope optics of the CCD camera.

  17. Total dose radiation effects of pressure sensors fabricated on uni-bond-SOI materials

    International Nuclear Information System (INIS)

    Zhu Shiyang; Huang Yiping; Wang Jin; Li Anzhen; Shen Shaoqun; Bao Minhang

    2001-01-01

    Piezoresistive pressure sensors with a twin-island structure were successfully fabricated using high quality Uni-bond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO 2 , the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60 Co γ-rays up to 2.3 x 10 4 Gy(H 2 O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition

  18. Plantar pressure cartography reconstruction from 3 sensors.

    Science.gov (United States)

    Abou Ghaida, Hussein; Mottet, Serge; Goujon, Jean-Marc

    2014-01-01

    Foot problem diagnosis is often made by using pressure mapping systems, unfortunately located and used in the laboratories. In the context of e-health and telemedicine for home monitoring of patients having foot problems, our focus is to present an acceptable system for daily use. We developed an ambulatory instrumented insole using 3 pressures sensors to visualize plantar pressure cartographies. We show that a standard insole with fixed sensor position could be used for different foot sizes. The results show an average error measured at each pixel of 0.01 daN, with a standard deviation of 0.005 daN.

  19. A facile fluorescent sensor based on silicon nanowires for dithionite

    Science.gov (United States)

    Cao, Xingxing; Mu, Lixuan; Chen, Min; She, Guangwei

    2018-05-01

    A facile and novel fluorescent sensor for dithionite has been constructed by simultaneously immobilizing dansyl group (fluorescence molecule) and dabsyl group (quencher and recognizing group) on the silicon nanowires (SiNWs) and SiNW arrays surface. This sensor for dithionite exhibited high selectivity and a good relationship of linearity between fluorescence intensities and dithionite concentrations from 0.1 to 1 mM. This approach is straightforward and does not require complicated synthesis, which can be extended to develop other sensors with similar rationale.

  20. A Hybrid Pressure and Vector Sensor Towed Array

    National Research Council Canada - National Science Library

    Huang, Dehua

    2008-01-01

    The invention as disclosed is of a combined acoustic pressure and acoustic vector sensor array, where multiple acoustic pressure sensors are integrated with an acoustic vector sensor in a towed array...

  1. Alpha-Particle Gas-Pressure Sensor

    Science.gov (United States)

    Buehler, M. C.; Bell, L. D.; Hecht, M. H.

    1996-01-01

    An approximate model was developed to establish design curves for the saturation region and a more complete model developed to characterize the current-voltage curves for an alpha-particle pressure sensor. A simple two-parameter current-voltage expression was developed to describe the dependence of the ion current on pressure. The parameters are the saturation-current pressure coefficient and mu/D, the ion mobility/diffusion coefficient. The sensor is useful in the pressure range between 0.1 and 1000 mb using a 1 - mu Ci(241) Am source. Experimental results, taken between 1 and up to 200 mb, show the sensor operates with an anode voltage of 5 V and a sensitivity of 20 fA/mb in nitrogen.

  2. Silicon sensor probing and radiation studies for the LHCb silicon tracker

    International Nuclear Information System (INIS)

    Lois, Cristina

    2006-01-01

    The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

  3. Practical Use Technique of Sensor

    International Nuclear Information System (INIS)

    Hwang, Gyu Seop

    1985-11-01

    This book tells of practical use technology of sensor, introducing the recent trend of sensor for electronic industry, IC temperature sensor, radiation temperature sensor of surface acoustic wave, optical fiber temperature sensor, a polyelectrolyte film humidity sensor, semiconductor pressure sensor for industrial instrumentation, silicon integration pressure sensor, thick film humidity sensor and its application, photo sensor reflection type, and color sensor. It also deals with sensor for FA, sensor for a robot and sensor for the chemical industry.

  4. Practical Use Technique of Sensor

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Gyu Seop

    1985-11-15

    This book tells of practical use technology of sensor, introducing the recent trend of sensor for electronic industry, IC temperature sensor, radiation temperature sensor of surface acoustic wave, optical fiber temperature sensor, a polyelectrolyte film humidity sensor, semiconductor pressure sensor for industrial instrumentation, silicon integration pressure sensor, thick film humidity sensor and its application, photo sensor reflection type, and color sensor. It also deals with sensor for FA, sensor for a robot and sensor for the chemical industry.

  5. Microwave Atmospheric-Pressure Sensor

    Science.gov (United States)

    Flower, D. A.; Peckham, G. E.; Bradford, W. J.

    1986-01-01

    Report describes tests of microwave pressure sounder (MPS) for use in satellite measurements of atmospheric pressure. MPS is multifrequency radar operating between 25 and 80 GHz. Determines signal absorption over vertical path through atmosphere by measuring strength of echoes from ocean surface. MPS operates with cloud cover, and suitable for use on current meteorological satellites.

  6. A high-temperature silicon-on-insulator stress sensor

    International Nuclear Information System (INIS)

    Wang Zheyao; Tian Kuo; Zhou Youzheng; Pan Liyang; Liu Litian; Hu Chaohong

    2008-01-01

    A piezoresistive stress sensor is developed using silicon-on-insulator (SOI) wafers and calibrated for stress measurement for high-temperature applications. The stress sensor consists of 'silicon-island-like' piezoresistor rosettes that are etched on the SOI layer. This eliminates leakage current and enables excellent electrical insulation at high temperature. To compensate for the measurement errors caused by the misalignment of the piezoresistor rosettes with respect to the crystallographic axes, an anisotropic micromachining technique, tetramethylammonium hydroxide etching, is employed to alleviate the misalignment issue. To realize temperature-compensated stress measurement, a planar diode is fabricated as a temperature sensor to decouple the temperature information from the piezoresistors, which are sensitive to both stress and temperature. Design, fabrication and calibration of the piezoresistors are given. SOI-related characteristics such as piezoresistive coefficients and temperature coefficients as well as the influence of the buried oxide layer are discussed in detail

  7. Radiation hardness of diamond and silicon sensors compared

    CERN Document Server

    de Boer, Wim; Furgeri, Alexander; Mueller, Steffen; Sander, Christian; Berdermann, Eleni; Pomorski, Michal; Huhtinen, Mika

    2007-01-01

    The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si- and C-sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non-Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non-relativistic energies the elastic cross section prevails. The smaller inelastic nucleon-Carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller.

  8. Miniature all-silica optical fiber pressure sensor with an ultrathin uniform diaphragm.

    Science.gov (United States)

    Wang, Wenhui; Wu, Nan; Tian, Ye; Niezrecki, Christopher; Wang, Xingwei

    2010-04-26

    This paper presents an all-silica miniature optical fiber pressure/acoustic sensor based on the Fabry-Perot (FP) interferometric principle. The endface of the etched optical fiber tip and silica thin diaphragm on it form the FP structure. The uniform and thin silica diaphragm was fabricated by etching away the silicon substrate from a commercial silicon wafer that has a thermal oxide layer. The thin film was directly thermally bonded to the endface of the optical fiber thus creating the Fabry-Perot cavity. Thin films with a thickness from 1microm to 3microm have been bonded successfully. The sensor shows good linearity and hysteresis during measurement. A sensor with 0.75 microm-thick diaphragm thinned by post silica etching was demonstrated to have a sensitivity of 11 nm/kPa. The new sensor has great potential to be used as a non-intrusive pressure sensor in a variety of sensing applications.

  9. A transparent bending-insensitive pressure sensor

    Science.gov (United States)

    Lee, Sungwon; Reuveny, Amir; Reeder, Jonathan; Lee, Sunghoon; Jin, Hanbit; Liu, Qihan; Yokota, Tomoyuki; Sekitani, Tsuyoshi; Isoyama, Takashi; Abe, Yusuke; Suo, Zhigang; Someya, Takao

    2016-05-01

    Measuring small normal pressures is essential to accurately evaluate external stimuli in curvilinear and dynamic surfaces such as natural tissues. Usually, sensitive and spatially accurate pressure sensors are achieved through conformal contact with the surface; however, this also makes them sensitive to mechanical deformation (bending). Indeed, when a soft object is pressed by another soft object, the normal pressure cannot be measured independently from the mechanical stress. Here, we show a pressure sensor that measures only the normal pressure, even under extreme bending conditions. To reduce the bending sensitivity, we use composite nanofibres of carbon nanotubes and graphene. Our simulations show that these fibres change their relative alignment to accommodate bending deformation, thus reducing the strain in individual fibres. Pressure sensitivity is maintained down to a bending radius of 80 μm. To test the suitability of our sensor for soft robotics and medical applications, we fabricated an integrated sensor matrix that is only 2 μm thick. We show real-time (response time of ∼20 ms), large-area, normal pressure monitoring under different, complex bending conditions.

  10. Silicon sensors for trackers at high-luminosity environment

    Energy Technology Data Exchange (ETDEWEB)

    Peltola, Timo, E-mail: timo.peltola@helsinki.fi

    2015-10-01

    The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system that was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than in the current LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 Collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented. - Highlights: • An overview of the recent results from the RD50 collaboration. • Accuracy of TCAD simulations increased by including both bulk and surface damage. • Sensors with n-electrode readout and MCz material offer higher radiation hardness. • 3D detectors are a promising choice for the extremely high fluence environments. • Detectors with an enhanced charge carrier generation under systematic investigation.

  11. Design and Manufacturing of a Passive Pressure Sensor Based on LC Resonance

    Directory of Open Access Journals (Sweden)

    Cheng Zheng

    2016-05-01

    Full Text Available The LC resonator-based passive pressure sensor attracts much attention because it does not need a power source or lead wires between the sensing element and the readout system. This paper presents the design and manufacturing of a passive pressure sensor that contains a variable capacitor and a copper-electroplated planar inductor. The sensor is fabricated using silicon bulk micro-machining, electroplating, and anodic bonding technology. The finite element method is used to model the deflection of the silicon diaphragm and extract the capacitance change corresponding to the applied pressure. Within the measurement range from 5 to 100 kPa, the sensitivity of the sensor is 0.052 MHz/kPa, the linearity is 2.79%, and the hysteresis error is 0.2%. Compared with the sensitivity at 27 °C, the drop of output performance is 3.53% at 140 °C.

  12. The silicon microstrip sensors of the ATLAS semiconductor tracker

    International Nuclear Information System (INIS)

    ATLAS SCT Collaboration; Spieler, Helmuth G.

    2007-01-01

    This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the Semiconductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd. supplied 92.2percent of the 15,392 installed sensors, with the remainder supplied by CiS

  13. The silicon microstrip sensors of the ATLAS semiconductor tracker

    Energy Technology Data Exchange (ETDEWEB)

    ATLAS SCT Collaboration; Spieler, Helmuth G.

    2007-04-13

    This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the Semiconductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd. supplied 92.2percent of the 15,392 installed sensors, with the remainder supplied by CiS.

  14. Pressure sensor apparatus for indicating pressure in the body

    International Nuclear Information System (INIS)

    Hittman, F.; Fleischmann, L.W.

    1981-01-01

    A novel pressure sensor for indicating pressure in the body cavities of humans or animals is described in detail. The pressure sensor apparatus is relatively small and is easily implantable. It consists of a radioactive source (e.g. Pr-145, C-14, Ni-63, Sr-90 and Am-241) and associated radiation shielding and a bellows. The pressure acting upon the sensing tambour causes the bellows to expand and contract. This is turn causes the radiation shielding to move and changes in pressure can then be monitored external to the body using a conventional nuclear detector. The bellows is made of resilient material (e.g. gold plated nickel) and has a wall thickness of approximately 0.0003 inches. The apparatus is essentially insensitive to temperature variations. (U.K.)

  15. Ultrahigh Sensitivity Piezoresistive Pressure Sensors for Detection of Tiny Pressure.

    Science.gov (United States)

    Li, Hongwei; Wu, Kunjie; Xu, Zeyang; Wang, Zhongwu; Meng, Yancheng; Li, Liqiang

    2018-05-31

    High sensitivity pressure sensors are crucial for the ultra-sensitive touch technology and E-skin, especially at the tiny pressure range below 100 Pa. However, it is highly challenging to substantially promote sensitivity beyond the current level at several to two hundred kPa -1 , and to improve the detection limit lower than 0.1 Pa, which is significant for the development of pressure sensors toward ultrasensitive and highly precise detection. Here, we develop an efficient strategy to greatly improve the sensitivity near to 2000 kPa -1 by using short channel coplanar device structure and sharp microstructure, which is systematically proposed for the first time and rationalized by the mathematic calculation and analysis. Significantly, benefiting from the ultrahigh sensitivity, the detection limit is improved to be as small as 0.075 Pa. The sensitivity and detection limit are both superior to the current levels, and far surpass the function of human skin. Furthermore, the sensor shows fast response time (50 μs), excellent reproducibility and stability, and low power consumption. Remarkably, the sensor shows excellent detection capacity in the tiny pressure range including LED switching with a pressure of 7 Pa, ringtone (2-20 Pa) recognition, and ultrasensitive (0.1 Pa) electronic glove. This work represents a performance and strategic progress in the field of pressure sensing.

  16. Optical Fibre Pressure Sensors in Medical Applications

    Directory of Open Access Journals (Sweden)

    Sven Poeggel

    2015-07-01

    Full Text Available This article is focused on reviewing the current state-of-the-art of optical fibre pressure sensors for medical applications. Optical fibres have inherent advantages due to their small size, immunity to electromagnetic interferences and their suitability for remote monitoring and multiplexing. The small dimensions of optical fibre-based pressure sensors, together with being lightweight and flexible, mean that they are minimally invasive for many medical applications and, thus, particularly suited to in vivo measurement. This means that the sensor can be placed directly inside a patient, e.g., for urodynamic and cardiovascular assessment. This paper presents an overview of the recent developments in optical fibre-based pressure measurements with particular reference to these application areas.

  17. Optical Fibre Pressure Sensors in Medical Applications.

    Science.gov (United States)

    Poeggel, Sven; Tosi, Daniele; Duraibabu, DineshBabu; Leen, Gabriel; McGrath, Deirdre; Lewis, Elfed

    2015-07-15

    This article is focused on reviewing the current state-of-the-art of optical fibre pressure sensors for medical applications. Optical fibres have inherent advantages due to their small size, immunity to electromagnetic interferences and their suitability for remote monitoring and multiplexing. The small dimensions of optical fibre-based pressure sensors, together with being lightweight and flexible, mean that they are minimally invasive for many medical applications and, thus, particularly suited to in vivo measurement. This means that the sensor can be placed directly inside a patient, e.g., for urodynamic and cardiovascular assessment. This paper presents an overview of the recent developments in optical fibre-based pressure measurements with particular reference to these application areas.

  18. Optical Fibre Pressure Sensors in Medical Applications

    Science.gov (United States)

    Poeggel, Sven; Tosi, Daniele; Duraibabu, DineshBabu; Leen, Gabriel; McGrath, Deirdre; Lewis, Elfed

    2015-01-01

    This article is focused on reviewing the current state-of-the-art of optical fibre pressure sensors for medical applications. Optical fibres have inherent advantages due to their small size, immunity to electromagnetic interferences and their suitability for remote monitoring and multiplexing. The small dimensions of optical fibre-based pressure sensors, together with being lightweight and flexible, mean that they are minimally invasive for many medical applications and, thus, particularly suited to in vivo measurement. This means that the sensor can be placed directly inside a patient, e.g., for urodynamic and cardiovascular assessment. This paper presents an overview of the recent developments in optical fibre-based pressure measurements with particular reference to these application areas. PMID:26184228

  19. Application of CMOS Technology to Silicon Photomultiplier Sensors

    Science.gov (United States)

    D’Ascenzo, Nicola; Zhang, Xi; Xie, Qingguo

    2017-01-01

    We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. PMID:28946675

  20. The mid-IR silicon photonics sensor platform (Conference Presentation)

    Science.gov (United States)

    Kimerling, Lionel; Hu, Juejun; Agarwal, Anuradha M.

    2017-02-01

    Advances in integrated silicon photonics are enabling highly connected sensor networks that offer sensitivity, selectivity and pattern recognition. Cost, performance and the evolution path of the so-called `Internet of Things' will gate the proliferation of these networks. The wavelength spectral range of 3-8um, commonly known as the mid-IR, is critical to specificity for sensors that identify materials by detection of local vibrational modes, reflectivity and thermal emission. For ubiquitous sensing applications in this regime, the sensors must move from premium to commodity level manufacturing volumes and cost. Scaling performance/cost is critically dependent on establishing a minimum set of platform attributes for point, wearable, and physical sensing. Optical sensors are ideal for non-invasive applications. Optical sensor device physics involves evanescent or intra-cavity structures for applied to concentration, interrogation and photo-catalysis functions. The ultimate utility of a platform is dependent on sample delivery/presentation modalities; system reset, recalibration and maintenance capabilities; and sensitivity and selectivity performance. The attributes and performance of a unified Glass-on-Silicon platform has shown good prospects for heterogeneous integration on materials and devices using a low cost process flow. Integrated, single mode, silicon photonic platforms offer significant performance and cost advantages, but they require discovery and qualification of new materials and process integration schemes for the mid-IR. Waveguide integrated light sources based on rare earth dopants and Ge-pumped frequency combs have promise. Optical resonators and waveguide spirals can enhance sensitivity. PbTe materials are among the best choices for a standard, waveguide integrated photodetector. Chalcogenide glasses are capable of transmitting mid-IR signals with high transparency. Integrated sensor case studies of i) high sensitivity analyte detection in

  1. Silicon Nanowire Field-effect Chemical Sensor

    OpenAIRE

    Chen, S.

    2011-01-01

    This thesis describes the work that has been done on the project “Design and optimization of silicon nanowire for chemical sensing‿, including Si-NW fabrication, electrical/electrochemical modeling, the application as ISFET, and the build-up of Si- NW/LOC system for automatic sample delivery. A novel top-down fabrication technique was presented for single-crystal Si-NW fabrication realized with conventional microfabrication technique. High quality triangular Si-NWs were made with high wafer-s...

  2. Welding wire pressure sensor assembly

    Science.gov (United States)

    Morris, Timothy B. (Inventor); Milly, Peter F., Sr. (Inventor); White, J. Kevin (Inventor)

    1994-01-01

    The present invention relates to a device which is used to monitor the position of a filler wire relative to a base material being welded as the filler wire is added to a welding pool. The device is applicable to automated welding systems wherein nonconsumable electrode arc welding processes are utilized in conjunction with a filler wire which is added to a weld pool created by the electrode arc. The invention senses pressure deviations from a predetermined pressure between the filler wire and the base material, and provides electrical signals responsive to the deviations for actuating control mechanisms in an automatic welding apparatus so as to minimize the pressure deviation and to prevent disengagement of the contact between the filler wire and the base material.

  3. CMOS MEMS capacitive absolute pressure sensor

    International Nuclear Information System (INIS)

    Narducci, M; Tsai, J; Yu-Chia, L; Fang, W

    2013-01-01

    This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal–oxide–semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO 2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO 2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa −1 in the pressure range of 0–300 kPa. (paper)

  4. Thermal micropressure sensor for pressure monitoring in a minute package

    International Nuclear Information System (INIS)

    Wang, S. N.; Mizuno, K.; Fujiyoshi, M.; Funabashi, H.; Sakata, J.

    2001-01-01

    A thermal micropressure sensor suitable for pressure measurements in the range from 7x10 -3 to 1x10 5 Pa has been fabricated by forming a titanium (Ti) thin-film resistor on a floating nondoped silica glass membrane, with the sensing area being as small as 60 μmx60 μm. The sensor performance is raised by: (1) increasing the ratio of gaseous thermal conduction in the total thermal conduction by sensor structure design; (2) compensating the effect of ambient-temperature drift by using a reference resistor located close to the sensing element but directly on the silicon substrate; and (3) utilizing an optimized novel constant-bias Wheatstone bridge circuit. By choosing a proper bias voltage, which can be found by simple calculation, the circuit extracts information on gaseous thermal conduction from the directly measurable total heat loss of the heated sensing element. The sensor was enclosed in a metal package with a capacity of about 0.5 ml by projection welding and was successfully applied to monitoring the pressure in the minute space

  5. Fabrication of All-SiC Fiber-Optic Pressure Sensors for High-Temperature Applications.

    Science.gov (United States)

    Jiang, Yonggang; Li, Jian; Zhou, Zhiwen; Jiang, Xinggang; Zhang, Deyuan

    2016-10-17

    Single-crystal silicon carbide (SiC)-based pressure sensors can be used in harsh environments, as they exhibit stable mechanical and electrical properties at elevated temperatures. A fiber-optic pressure sensor with an all-SiC sensor head was fabricated and is herein proposed. SiC sensor diaphragms were fabricated via an ultrasonic vibration mill-grinding (UVMG) method, which resulted in a small grinding force and low surface roughness. The sensor head was formed by hermetically bonding two layers of SiC using a nickel diffusion bonding method. The pressure sensor illustrated a good linearity in the range of 0.1-0.9 MPa, with a resolution of 0.27% F.S. (full scale) at room temperature.

  6. Fabrication of All-SiC Fiber-Optic Pressure Sensors for High-Temperature Applications

    Directory of Open Access Journals (Sweden)

    Yonggang Jiang

    2016-10-01

    Full Text Available Single-crystal silicon carbide (SiC-based pressure sensors can be used in harsh environments, as they exhibit stable mechanical and electrical properties at elevated temperatures. A fiber-optic pressure sensor with an all-SiC sensor head was fabricated and is herein proposed. SiC sensor diaphragms were fabricated via an ultrasonic vibration mill-grinding (UVMG method, which resulted in a small grinding force and low surface roughness. The sensor head was formed by hermetically bonding two layers of SiC using a nickel diffusion bonding method. The pressure sensor illustrated a good linearity in the range of 0.1–0.9 MPa, with a resolution of 0.27% F.S. (full scale at room temperature.

  7. Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

    Science.gov (United States)

    Ferguson, Frank T.; Nuth, Joseph A., III

    2012-01-01

    The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

  8. Systematic irradiation studies and quality assurance of silicon strip sensors for the CBM Silicon Tracking System

    International Nuclear Information System (INIS)

    Larionov, Pavel

    2016-10-01

    The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is designed to investigate the phase diagram of strongly interacting matter at neutron star core densities under laboratory conditions. This work is a contribution to the development of the main tracking detector of the CBM experiment - the Silicon Tracking System (STS), designed to provide the tracking and the momentum information for charged particles in a high multiplicity environment. The STS will be composed of about 900 highly segmented double-sided silicon strip sensors and is expected to face a harsh radiation environment up to 1 x 10 14 cm -2 in 1 MeV neutron equivalent fluence after several years of operation. The two most limiting factors of the successful operation of the system are the radiation damage and the quality of produced silicon sensors. It is therefore of importance to ensure both the radiation tolerance of the STS sensors and their quality during the production phase. The first part of this work details the investigation of the radiation tolerance of the STS sensors. Series of irradiations of miniature sensors as well as full-size prototype sensors were performed with reactor neutrons and 23 MeV protons to a broad range of fluences, up to 2 x 10 14 n eq /cm 2 . The evolution of the main sensor characteristics (leakage current, full depletion voltage and charge collection) was extensively studied both as a function of accumulated fluence and time after irradiation. In particular, charge collection measurements of miniature sensors demonstrated the ability of the sensors to yield approx. 90% to 95% of the signal after irradiation up to the lifetime fluence, depending on the readout side. First results on the charge collection performance of irradiated full-size prototype sensors have been obtained, serving as an input data for further final signal-to-noise evaluation in the whole readout chain. Operational stability of these

  9. Systematic irradiation studies and quality assurance of silicon strip sensors for the CBM Silicon Tracking System

    Energy Technology Data Exchange (ETDEWEB)

    Larionov, Pavel

    2016-10-15

    The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is designed to investigate the phase diagram of strongly interacting matter at neutron star core densities under laboratory conditions. This work is a contribution to the development of the main tracking detector of the CBM experiment - the Silicon Tracking System (STS), designed to provide the tracking and the momentum information for charged particles in a high multiplicity environment. The STS will be composed of about 900 highly segmented double-sided silicon strip sensors and is expected to face a harsh radiation environment up to 1 x 10{sup 14} cm{sup -2} in 1 MeV neutron equivalent fluence after several years of operation. The two most limiting factors of the successful operation of the system are the radiation damage and the quality of produced silicon sensors. It is therefore of importance to ensure both the radiation tolerance of the STS sensors and their quality during the production phase. The first part of this work details the investigation of the radiation tolerance of the STS sensors. Series of irradiations of miniature sensors as well as full-size prototype sensors were performed with reactor neutrons and 23 MeV protons to a broad range of fluences, up to 2 x 10{sup 14} n{sub eq}/cm{sup 2}. The evolution of the main sensor characteristics (leakage current, full depletion voltage and charge collection) was extensively studied both as a function of accumulated fluence and time after irradiation. In particular, charge collection measurements of miniature sensors demonstrated the ability of the sensors to yield approx. 90% to 95% of the signal after irradiation up to the lifetime fluence, depending on the readout side. First results on the charge collection performance of irradiated full-size prototype sensors have been obtained, serving as an input data for further final signal-to-noise evaluation in the whole readout chain. Operational

  10. A highly sensitive and durable electrical sensor for liquid ethanol using thermally-oxidized mesoporous silicon

    Science.gov (United States)

    Harraz, Farid A.; Ismail, Adel A.; Al-Sayari, S. A.; Al-Hajry, A.; Al-Assiri, M. S.

    2016-12-01

    A capacitive detection of liquid ethanol using reactive, thermally oxidized films constructed from electrochemically synthesized porous silicon (PSi) is demonstrated. The sensor elements are fabricated as meso-PSi (pore sizes hydrophobic PSi surface exhibited almost a half sensitivity of the thermal oxide sensor. The response to water is achieved only at the oxidized surface and found to be ∼one quarter of the ethanol sensitivity, dependent on parameters such as vapor pressure and surface tension. The capacitance response retains ∼92% of its initial value after continuous nine cyclic runs and the sensors presumably keep long-term stability after three weeks storage, demonstrating excellent durability and storage stability. The observed behavior in current system is likely explained by the interface interaction due to dipole moment effect. The results suggest that the current sensor structure and design can be easily made to produce notably higher sensitivities for reversible detection of various analytes.

  11. Organic electronics based pressure sensor towards intracranial pressure monitoring

    Science.gov (United States)

    Rai, Pratyush; Varadan, Vijay K.

    2010-04-01

    The intra-cranial space, which houses the brain, contains cerebrospinal fluid (CSF) that acts as a fluid suspension medium for the brain. The CSF is always in circulation, is secreted in the cranium and is drained out through ducts called epidural veins. The venous drainage system has inherent resistance to the flow. Pressure is developed inside the cranium, which is similar to a rigid compartment. Normally a pressure of 5-15 mm Hg, in excess of atmospheric pressure, is observed at different locations inside the cranium. Increase in Intra-Cranial Pressure (ICP) can be caused by change in CSF volume caused by cerebral tumors, meningitis, by edema of a head injury or diseases related to cerebral atrophy. Hence, efficient ways of monitoring ICP need to be developed. A sensor system and monitoring scheme has been discussed here. The system architecture consists of a membrane less piezoelectric pressure sensitive element, organic thin film transistor (OTFT) based signal transduction, and signal telemetry. The components were fabricated on flexible substrate and have been assembled using flip-chip packaging technology. Material science and fabrication processes, subjective to the device performance, have been discussed. Capability of the device in detecting pressure variation, within the ICP pressure range, is investigated and applicability of measurement scheme to medical conditions has been argued for. Also, applications of such a sensor-OTFT assembly for logic sensor switching and patient specific-secure monitoring system have been discussed.

  12. Fiber Optic Pressure Sensor using Multimode Interference

    International Nuclear Information System (INIS)

    Ruiz-Perez, V I; Sanchez-Mondragon, J J; Basurto-Pensado, M A; LiKamWa, P; May-Arrioja, D A

    2011-01-01

    Based on the theory of multimode interference (MMI) and self-image formation, we developed a novel intrinsic optical fiber pressure sensor. The sensing element consists of a section of multimode fiber (MMF) without cladding spliced between two single mode fibers (SMF). The MMI pressure sensor is based on the intensity changes that occur in the transmitted light when the effective refractive index of the MMF is changed. Basically, a thick layer of Polydimethylsiloxane (PDMS) is placed in direct contact with the MMF section, such that the contact area between the PDMS and the fiber will change proportionally with the applied pressure, which results in a variation of the transmitted light intensity. Using this configuration, a good correlation between the measured intensity variations and the applied pressure is obtained. The sensitivity of the sensor is 3 μV/psi, for a range of 0-60 psi, and the maximum resolution of our system is 0.25 psi. Good repeatability is also observed with a standard deviation of 0.0019. The key feature of the proposed pressure sensor is its low fabrication cost, since the cost of the MMF is minimal.

  13. Fiber Optic Pressure Sensor using Multimode Interference

    Energy Technology Data Exchange (ETDEWEB)

    Ruiz-Perez, V I; Sanchez-Mondragon, J J [INAOE, Apartado Postal 51 y 216, Puebla 72000 (Mexico); Basurto-Pensado, M A [CIICAp, Universidad Autonoma del Estado de Morelos (Mexico); LiKamWa, P [CREOL, University of Central Florida, Orlando, FL 32816 (United States); May-Arrioja, D A, E-mail: iruiz@inaoep.mx, E-mail: mbasurto@uaem.mx, E-mail: delta_dirac@hotmail.com, E-mail: daniel_may_arrioja@hotmail.com [UAT Reynosa Rodhe, Universidad Autonoma de Tamaulipas (Mexico)

    2011-01-01

    Based on the theory of multimode interference (MMI) and self-image formation, we developed a novel intrinsic optical fiber pressure sensor. The sensing element consists of a section of multimode fiber (MMF) without cladding spliced between two single mode fibers (SMF). The MMI pressure sensor is based on the intensity changes that occur in the transmitted light when the effective refractive index of the MMF is changed. Basically, a thick layer of Polydimethylsiloxane (PDMS) is placed in direct contact with the MMF section, such that the contact area between the PDMS and the fiber will change proportionally with the applied pressure, which results in a variation of the transmitted light intensity. Using this configuration, a good correlation between the measured intensity variations and the applied pressure is obtained. The sensitivity of the sensor is 3 {mu}V/psi, for a range of 0-60 psi, and the maximum resolution of our system is 0.25 psi. Good repeatability is also observed with a standard deviation of 0.0019. The key feature of the proposed pressure sensor is its low fabrication cost, since the cost of the MMF is minimal.

  14. Comparison of silicon strip tracker module size using large sensors from 6 inch wafers

    CERN Multimedia

    Honma, Alan

    1999-01-01

    Two large silicon strip sensor made from 6 inch wafers are placed next to each other to simulate the size of a CMS outer silicon tracker module. On the left is a prototype 2 sensor CMS inner endcap silicon tracker module made from 4 inch wafers.

  15. On the timing performance of thin planar silicon sensors

    Science.gov (United States)

    Akchurin, N.; Ciriolo, V.; Currás, E.; Damgov, J.; Fernández, M.; Gallrapp, C.; Gray, L.; Junkes, A.; Mannelli, M.; Martin Kwok, K. H.; Meridiani, P.; Moll, M.; Nourbakhsh, S.; Pigazzini, S.; Scharf, C.; Silva, P.; Steinbrueck, G.; de Fatis, T. Tabarelli; Vila, I.

    2017-07-01

    We report on the signal timing capabilities of thin silicon sensors when traversed by multiple simultaneous minimum ionizing particles (MIP). Three different planar sensors, with depletion thicknesses 133, 211, and 285 μm, have been exposed to high energy muons and electrons at CERN. We describe signal shape and timing resolution measurements as well as the response of these devices as a function of the multiplicity of MIPs. We compare these measurements to simulations where possible. We achieve better than 20 ps timing resolution for signals larger than a few tens of MIPs.

  16. Combined Differential and Static Pressure Sensor based on a Double-Bridged Structure

    DEFF Research Database (Denmark)

    Pedersen, Casper; Jespersen, S.T.; Krog, J.P.

    2005-01-01

    A combined differential and static silicon microelectromechanical system pressure sensor based on a double piezoresistive Wheatstone bridge structure is presented. The developed sensor has a conventional (inner) bridge on a micromachined diaphragm and a secondary (outer) bridge on the chip...... substrate. A novel approach is demonstrated with a combined measurement of outputs from the two bridges, which results in a combined deduction of both differential and static media pressure. Also following this new approach, a significant improvement in differential pressure sensor accuracy is achieved....... Output from the two bridges depends linearly on both differential and absolute (relative to atmospheric pressure) media pressure. Furthermore, the sensor stress distributions involved are studied by three-dimensional finite-element (FE) stress analysis. Furthermore, the FE analysis evaluates current...

  17. Fiber-linked interferometric pressure sensor

    Science.gov (United States)

    Beheim, G.; Fritsch, K.; Poorman, R. N.

    1987-01-01

    A fiber-optic pressure sensor is described which uses a diaphragm to modulate the mirror separation of a Fabry-Perot cavity (the sensing cavity). A multimode optical fiber delivers broadband light to the sensing cavity and returns the spectrally modulated light which the cavity reflects. The sensor's output spectrum is analyzed using a tunable Fabry-Perot cavity (the reference cavity) to determine the mismatch in the mirror separations of the two cavities. An electronic servo control uses this result to cause the mirror separation of the reference cavity to equal that of the sensing cavity. The displacement of the pressure-sensing diaphragm is then obtained by measuring the capacitance of the reference cavity's metal-coated mirrors. Relative to other fiber-optic sensors, an important advantage of this instrument is its high immunity to the effects of variations in both the transmissivity of the fiber link and the wavelength of the optical source.

  18. [Pressure sensors to prevent cardiac decompensation].

    Science.gov (United States)

    Klug, Didier

    2017-11-01

    Most cases of hospitalisation for heart failure are preceded by episodes of cardiac decompensation. Preventing these episodes would improve quality of life and reduce mortality and treatment costs. The monitoring of intracardiac pressures, using innovative sensors, coupled with telemedicine, offers interesting perspectives. Copyright © 2017 Elsevier Masson SAS. All rights reserved.

  19. Advanced silicon sensors for future collider experiments

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00437143; Moll, Michael; Mannelli, Marcello

    In this thesis, we address two key technological challenges: the radiation tolerance assessment and timing performance studies of thin planar diodes to be used as sensing technology in the recently approved CMS forward sampling calorimeter for the HL-LHC operation, the High Granularity Calorimeter (HGCAL); and, complementary, we carried out a detailed study of a novel kind of position sensitive microstrip sensors for ionising particles which implements the well established charge-division method to determine the particle impinging position along the microstrip electrode direction; this technology could become an interesting low-material budget solution for the new generation of tracking detectors to be operated in the future lepton collider experiments.

  20. Strip defect recognition in electrical tests of silicon microstrip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Valentan, Manfred, E-mail: valentan@mpp.mpg.de

    2017-02-11

    This contribution describes the measurement procedure and data analysis of AC-coupled double-sided silicon microstrip sensors with polysilicon resistor biasing. The most thorough test of a strip sensor is an electrical measurement of all strips of the sensor; the measured observables include e.g. the strip's current and the coupling capacitance. These measurements are performed to find defective strips, e.g. broken capacitors (pinholes) or implant shorts between two adjacent strips. When a strip has a defect, its observables will show a deviation from the “typical value”. To recognize and quantify certain defects, it is necessary to determine these typical values, i.e. the values the observables would have without the defect. As a novel approach, local least-median-of-squares linear fits are applied to determine these “would-be” values of the observables. A least-median-of-squares fit is robust against outliers, i.e. it ignores the observable values of defective strips. Knowing the typical values allows to recognize, distinguish and quantify a whole range of strip defects. This contribution explains how the various defects appear in the data and in which order the defects can be recognized. The method has been used to find strip defects on 30 double-sided trapezoidal microstrip sensors for the Belle II Silicon Vertex Detector, which have been measured at the Institute of High Energy Physics, Vienna (Austria).

  1. Pressure sensor for high-temperature liquids

    International Nuclear Information System (INIS)

    Forster, G.A.

    1978-01-01

    A pressure sensor for use in measuring pressures in liquid at high temperatures, especially such as liquid sodium or liquid potassium, comprises a soft diaphragm in contact with the liquid. The soft diaphragm is coupled mechanically to a stiff diaphragm. Pressure is measured by measuring the displacement of both diaphragms, typically by measuring the capacitance between the stiff diaphragm and a fixed plate when the stiff diaphragm is deflected in response to the measured pressure through mechanical coupling from the soft diaphragm. Absolute calibration is achieved by admitting gas under pressure to the region between diaphragms and to the region between the stiff diaphragm and the fixed plate, breaking the coupling between the soft and stiff diaphragms. The apparatus can be calibrated rapidly and absolutely

  2. Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

    Science.gov (United States)

    Ghosh, P.

    2014-07-01

    The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 1014neqcm-2. Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors.

  3. Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

    International Nuclear Information System (INIS)

    Ghosh, P

    2014-01-01

    The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 10 14 n eq cm −2 . Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors

  4. The annealing effects on irradiated SiC piezo resistive pressure sensor

    International Nuclear Information System (INIS)

    Almaz, E.; Blue, T. E.; Zhang, P.

    2009-01-01

    The effects of temperature on annealing of Silicon Carbide (SiC) piezo resistive pressure sensor which was broken after high fluence neutron irradiation, were investigated. Previously, SiC piezo resistive sensor irradiated with gamma ray and fast neutron in the Co-60 gamma-ray irradiator and Beam Port 1 (BP1) and Auxiliary Irradiation Facility (AIF) at the Ohio State University Nuclear Reactor Laboratory (OSUNRL) respectively. The Annealing temperatures were tested up to 400 C. The Pressure-Output voltage results showed recovery after annealing process on SiC piezo resistive pressure sensor. The bridge resistances of the SiC pressure sensor stayed at the same level up to 300 C. After 400 C annealing, the resistance values changed dramatically.

  5. Signal development in silicon sensors used for radiation detection

    International Nuclear Information System (INIS)

    Becker, Julian

    2010-08-01

    This work investigates the charge collection properties in silicon sensors. In order to perform the investigations a setup for measurements utilizing the Transient Current Technique (TCT) has been designed and built. Optical lasers with different wavelengths and short pulses (FWHM<100 ps) have been used to create charge carriers in the sensor volume. A new parameterization of charge carrier mobilities in bulk silicon as function of electric field and temperature was derived for two different crystal orientations from investigations on pad sensors with low charge carrier densities. In the course of these investigations a simulation program for current pulses was developed. The program simulates current pulses, which are induced by drift and diffusion of charge carriers for pad sensors, and approximately for strip and pixel sensors. The simulation program could be used to describe the current pulses of irradiated sensors. Additionally, using the simulation program, it was shown that impact ionization is a possible reason for the recently reported charge multiplication effects in highly irradiated sensors. The central topic of this work is the investigation of effects of high charge carrier densities, so called plasma effects. In this work plasma effects were created by focusing the lasers. The measurements of the plasma efffects on pad sensors were used as reference measurements for simulations performed by WIAS in Berlin. It was shown that using charge transport models accepted in literature, the observed plasma effects cannot be described. Measurements on strip sensors were performed with regards to the detector development for the European XFEL. Measurements of peak currents and charge collection times as function of photon intensity and applied bias voltage allowed the determination of optimum operation parameters of the Adaptive Gain Integration Pixel Detector (AGIPD), which will be used at the European XFEL. Utilizing position sensitive measurements on strip

  6. Signal development in silicon sensors used for radiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Julian

    2010-08-15

    This work investigates the charge collection properties in silicon sensors. In order to perform the investigations a setup for measurements utilizing the Transient Current Technique (TCT) has been designed and built. Optical lasers with different wavelengths and short pulses (FWHM<100 ps) have been used to create charge carriers in the sensor volume. A new parameterization of charge carrier mobilities in bulk silicon as function of electric field and temperature was derived for two different crystal orientations from investigations on pad sensors with low charge carrier densities. In the course of these investigations a simulation program for current pulses was developed. The program simulates current pulses, which are induced by drift and diffusion of charge carriers for pad sensors, and approximately for strip and pixel sensors. The simulation program could be used to describe the current pulses of irradiated sensors. Additionally, using the simulation program, it was shown that impact ionization is a possible reason for the recently reported charge multiplication effects in highly irradiated sensors. The central topic of this work is the investigation of effects of high charge carrier densities, so called plasma effects. In this work plasma effects were created by focusing the lasers. The measurements of the plasma efffects on pad sensors were used as reference measurements for simulations performed by WIAS in Berlin. It was shown that using charge transport models accepted in literature, the observed plasma effects cannot be described. Measurements on strip sensors were performed with regards to the detector development for the European XFEL. Measurements of peak currents and charge collection times as function of photon intensity and applied bias voltage allowed the determination of optimum operation parameters of the Adaptive Gain Integration Pixel Detector (AGIPD), which will be used at the European XFEL. Utilizing position sensitive measurements on strip

  7. Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

    Science.gov (United States)

    Yang, Jie

    2015-01-01

    Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

  8. MEMS fiber-optic Fabry-Perot pressure sensor for high temperature application

    Science.gov (United States)

    Fang, G. C.; Jia, P. G.; Cao, Q.; Xiong, J. J.

    2016-10-01

    We design and demonstrate a fiber-optic Fabry-Perot pressure sensor (FOFPPS) for high-temperature sensing by employing micro-electro-mechanical system (MEMS) technology. The FOFPPS is fabricated by anodically bonding the silicon wafer and the Pyrex glass together and fixing the facet of the optical fiber in parallel with the silicon surface by glass frit and organic adhesive. The silicon wafer can be reduced through dry etching technology to construct the sensitive diaphragm. The length of the cavity changes with the deformation of the diaphragm due to the loaded pressure, which leads to a wavelength shift of the interference spectrum. The pressure can be gauged by measuring the wavelength shift. The pressure experimental results show that the sensor has linear pressure sensitivities ranging from 0 kPa to 600 kPa at temperature range between 20°C to 300°C. The pressure sensitivity at 300°C is approximately 27.63 pm/kPa. The pressure sensitivities gradually decrease with increasing the temperature. The sensor also has a linear thermal drift when temperature changes from 20°C - 300°C.

  9. Development of a combined piezoresistive pressure and temperature sensor using a chemical protective coating for Kraft pulp digester process monitoring

    International Nuclear Information System (INIS)

    Mohammadi, Abdolreza R; Chiao, Mu; Bennington, Chad P J

    2011-01-01

    We have developed an integrated piezoresistive pressure and temperature sensor for multiphase chemical reactors, primarily Kraft pulp digesters (pH 13.5, temperatures up to 175 °C, reaching a local maximum of 180 °C and pressures up to 2 MPa). The absolute piezoresistive pressure sensor consisted of a large square silicon diaphragm (1000 × 1000 µm 2 ) and high resistance piezoresistors (10 000 Ω). A 4500 Ω buried piezoresistive wire was patterned on the silicon chip to form a piezoresistive temperature sensor which was used for pressure sensor compensation and temperature measurement. A 4 µm thick Parylene HT® coating, a chemically resistant epoxy and a silicone conformal coating were deposited to passivate the pressure sensor against the caustic environment in Kraft digesters. The sensors were characterized up to 2 MPa and 180 °C in an environment chamber. A maximum thermal error of ±0.72% full-scale output (FSO), an average sensitivity of 0.116 mV (V kPa) −1 and a power consumption of 0.3 mW were measured in the pressure sensor. The sensors' resistances were measured before and after test in a Kraft pulping cycle and showed no change in their values. SEM pictures and topographical surfaces were also analyzed before and after pulp liquor exposure and showed no observable changes.

  10. Test Structures for Rapid Prototyping of Gas and Pressure Sensors

    Science.gov (United States)

    Buehler, M.; Cheng, L. J.; Martin, D.

    1996-01-01

    A multi-project ceramic substrate was used in developing a gas sensor and pressure sensor. The ceramic substrate cantained 36 chips with six variants including sensors, process control monitors, and an interconnect ship. Tha gas sensor is being developed as an air quality monitor and the pressure gauge as a barometer.

  11. Modified porous silicon for electrochemical sensor of para-nitrophenol

    International Nuclear Information System (INIS)

    Belhousse, S.; Belhaneche-Bensemra, N.; Lasmi, K.; Mezaache, I.; Sedrati, T.; Sam, S.; Tighilt, F.-Z.; Gabouze, N.

    2014-01-01

    Highlights: • Hybrid device based on Porous silicon (PSi) and polythiophene (PTh) was prepared. • Three types of PSi/PTh hybrid structures were elaborated: PSi/PTh, oxide/PSi/PTh and Amino-propyltrimethoxysilane (APTMES)/oxide/PSi/PTh. • PTh was grafted on PSi using electrochemical polymerization. • The electrodetection of para-nitrophenol (p-NPh) was performed by cyclic voltammetry. • Oxide/PSi/PTh and APTMES/oxide/PSi/PTh, based electrochemical sensor showed a good response toward p-NPh. - Abstract: Hybrid structures based on polythiophene modified porous silicon was used for the electrochemical detection of para-nitrophenol, which is a toxic derivative of parathion insecticide and it is considered as a major toxic pollutant. The porous silicon was prepared by anodic etching in hydrofluodic acid. Polythiophene films were then grown by electropolymerisation of thiophene monomer on three different surfaces: hydrogenated PSi, oxidized PSi and amine-terminated PSi. The morphology of the obtained structures were observed by scanning electron microscopy and characterized by spectroscopy (FTIR). Cyclic voltammetry was used to study the electrochemical response of proposed structures to para-nitrophenol. The results show a high sensitivity of the sensor and a linearity of the electrochemical response in a large concentration interval ranging from 1.5 × 10 −8 M to the 3 × 10 −4 M

  12. Modified porous silicon for electrochemical sensor of para-nitrophenol

    Energy Technology Data Exchange (ETDEWEB)

    Belhousse, S., E-mail: all_samia_b@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Belhaneche-Bensemra, N., E-mail: nbelhaneche@yahoo.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Lasmi, K., E-mail: kahinalasmi@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Mezaache, I., E-mail: lyeso_44@hotmail.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Sedrati, T., E-mail: tarek_1990m@hotmail.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Sam, S., E-mail: Sabrina.sam@polytechnique.edu [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Tighilt, F.-Z., E-mail: mli_zola@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Gabouze, N., E-mail: ngabouze@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria)

    2014-11-15

    Highlights: • Hybrid device based on Porous silicon (PSi) and polythiophene (PTh) was prepared. • Three types of PSi/PTh hybrid structures were elaborated: PSi/PTh, oxide/PSi/PTh and Amino-propyltrimethoxysilane (APTMES)/oxide/PSi/PTh. • PTh was grafted on PSi using electrochemical polymerization. • The electrodetection of para-nitrophenol (p-NPh) was performed by cyclic voltammetry. • Oxide/PSi/PTh and APTMES/oxide/PSi/PTh, based electrochemical sensor showed a good response toward p-NPh. - Abstract: Hybrid structures based on polythiophene modified porous silicon was used for the electrochemical detection of para-nitrophenol, which is a toxic derivative of parathion insecticide and it is considered as a major toxic pollutant. The porous silicon was prepared by anodic etching in hydrofluodic acid. Polythiophene films were then grown by electropolymerisation of thiophene monomer on three different surfaces: hydrogenated PSi, oxidized PSi and amine-terminated PSi. The morphology of the obtained structures were observed by scanning electron microscopy and characterized by spectroscopy (FTIR). Cyclic voltammetry was used to study the electrochemical response of proposed structures to para-nitrophenol. The results show a high sensitivity of the sensor and a linearity of the electrochemical response in a large concentration interval ranging from 1.5 × 10{sup −8} M to the 3 × 10{sup −4}M.

  13. An Universal packaging technique for low-drift implantable pressure sensors.

    Science.gov (United States)

    Kim, Albert; Powell, Charles R; Ziaie, Babak

    2016-04-01

    Monitoring bodily pressures provide valuable diagnostic and prognostic information. In particular, long-term measurement through implantable sensors is highly desirable in situations where percutaneous access can be complicated or dangerous (e.g., intracranial pressure in hydrocephalic patients). In spite of decades of progress in the fabrication of miniature solid-state pressure sensors, sensor drift has so far severely limited their application in implantable systems. In this paper, we report on a universal packaging technique for reducing the sensor drift. The described method isolates the pressure sensor from a major source of drift, i.e., contact with the aqueous surrounding environment, by encasing the sensor in a silicone-filled medical-grade polyurethane balloon. In-vitro soak tests for 100 days using commercial micromachined piezoresistive pressure sensors demonstrate a stable operation with the output remaining within 1.8 cmH2O (1.3 mmHg) of a reference pressure transducer. Under similar test conditions, a non-isolated sensor fluctuates between 10 and 20 cmH2O (7.4-14.7 mmHg) of the reference, without ever settling to a stable operation regime. Implantation in Ossabow pigs demonstrate the robustness of the package and its in-vivo efficacy in reducing the baseline drift.

  14. Design and Application of a High Sensitivity Piezoresistive Pressure Sensor for Low Pressure Conditions

    Science.gov (United States)

    Yu, Huiyang; Huang, Jianqiu

    2015-01-01

    In this paper, a pressure sensor for low pressure detection (0.5 kPa–40 kPa) is proposed. In one structure (No. 1), the silicon membrane is partly etched to form a crossed beam on its top for stress concentration. An aluminum layer is also deposited as part of the beam. Four piezoresistors are fabricated. Two are located at the two ends of the beam. The other two are located at the membrane periphery. Four piezoresistors connect into a Wheatstone bridge. To demonstrate the stress concentrate effect of this structure, two other structures were designed and fabricated. One is a flat membrane structure (No. 2), the other is a structure with the aluminum beam, but without etched silicon (No. 3). The measurement results of these three structures show that the No.1 structure has the highest sensitivity, which is about 3.8 times that of the No. 2 structure and 2.7 times that of the No. 3 structure. They also show that the residual stress in the beam has some backside effect on the sensor performance. PMID:26371001

  15. Multi-Channel Electronically Scanned Cryogenic Pressure Sensor And Method For Making Same

    Science.gov (United States)

    Chapman, John J. (Inventor); Hopson, Purnell, Jr. (Inventor); Holloway, Nancy M. (Inventor)

    2001-01-01

    A miniature, multi-channel, electronically scanned pressure measuring device uses electrostatically bonded silicon dies in a multi-element array. These dies are bonded at specific sites on a glass, pre-patterned substrate. Thermal data is multiplexed and recorded on each individual pressure measuring diaphragm. The device functions in a cryogenic environment without the need of heaters to keep the sensor at constant temperatures.

  16. Acoustic sensor for remote measuring of pressure

    Directory of Open Access Journals (Sweden)

    Kataev V. F.

    2008-04-01

    Full Text Available The paper deals with sensors based on delay lines on surface acoustic waves (SAW, having a receiving-emitting and a reflective interdigital transducers (IDT. The dependence of the reflection coefficient of SAW on type and intensity of the load was studied. The authors propose a composite delay line in which the phase of the reflection coefficient depends on the pressure. Pressure leads to a shift of the reflective IDT relative to the transceiver, because they are located on different substrates. The paper also presents functional diagrams of the interrogator.

  17. The Capacitance and Temperature Effects of the SiC- and Si-Based MEMS Pressure Sensor

    International Nuclear Information System (INIS)

    Marsi, N; Majlis, B Y; Hamzah, A A; Mohd, F

    2013-01-01

    This project develops the pressure sensor for monitoring the extreme conditions inside the gas turbine engine. The capacitive-based instead of piezoresistive-based pressure sensor is employed to avoid temperature drift. The deflecting (top) plate and the fixed (bottom) plate generate the capacitance, which is proportional to the applied input pressure and temperature. Two thin film materials of four different sizes are employed for the top plate, namely cubic silicon carbide (3C-SiC) and silicon (Si). Their performances in term of the sensitivity and linearity of the capacitance versus pressure are simulated at the temperature of 27°C, 500°C, 700°C and 1000°C. The results show that both materials display linear characteristics for temperature up to 500°C, although SiC-based sensor shows higher sensitivity. However, when the temperatures are increased to 700°C and 1000°C, the Si- based pressure sensor starts to malfunction at 50 MPa. However, the SiC-based pressure sensor continues to demonstrate high sensitivity and linearity at such high temperature and pressure. This paper validates the need of employing silicon carbide instead of silicon for sensing of extreme environments.

  18. Decomposition of silicon carbide at high pressures and temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Daviau, Kierstin; Lee, Kanani K. M.

    2017-11-01

    We measure the onset of decomposition of silicon carbide, SiC, to silicon and carbon (e.g., diamond) at high pressures and high temperatures in a laser-heated diamond-anvil cell. We identify decomposition through x-ray diffraction and multiwavelength imaging radiometry coupled with electron microscopy analyses on quenched samples. We find that B3 SiC (also known as 3C or zinc blende SiC) decomposes at high pressures and high temperatures, following a phase boundary with a negative slope. The high-pressure decomposition temperatures measured are considerably lower than those at ambient, with our measurements indicating that SiC begins to decompose at ~ 2000 K at 60 GPa as compared to ~ 2800 K at ambient pressure. Once B3 SiC transitions to the high-pressure B1 (rocksalt) structure, we no longer observe decomposition, despite heating to temperatures in excess of ~ 3200 K. The temperature of decomposition and the nature of the decomposition phase boundary appear to be strongly influenced by the pressure-induced phase transitions to higher-density structures in SiC, silicon, and carbon. The decomposition of SiC at high pressure and temperature has implications for the stability of naturally forming moissanite on Earth and in carbon-rich exoplanets.

  19. Radiation hard silicon sensors for the CMS tracker upgrade

    CERN Document Server

    Pohlsen, Thomas

    2013-01-01

    At an instantaneous luminosity of $5 \\times 10^{34}$ cm$^{-2}$ s$^{-1}$, the high-luminosity phase of the Large Hadron Collider (HL-LHC) is expected to deliver a total of $3\\,000$ fb$^{-1}$ of collisions, hereby increasing the discovery potential of the LHC experiments significantly. However, the radiation dose of the tracking systems will be severe, requiring new radiation hard sensors for the CMS tracker. The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfils all requirements for detectors for the HL-LHC. Focussing on the upgrade of the outer tracker region, pad sensors as well as fully functional strip sensors have been implemented on silicon wafers with different material properties and thicknesses. The samples were irradiated with a mixture of neutrons and protons corresponding to fluences as expected for the positions of detector layers in the future tracker. Different proton energies were used for irr...

  20. Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor

    Science.gov (United States)

    Zhao, Xiaofeng; Li, Dandan; Yu, Yang; Wen, Dianzhong

    2017-07-01

    Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors ({R}1, {R}2, {R}3 and {R}4) locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator (SOI) wafer by micro electromechanical system (MEMS) technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity (TCS) for the sensor before and after temperature compensation are -1862 and -1067 ppm/°C, respectively. Through varying the ratio of the base region resistances {r}1 and {r}2, the TCS for the sensor with the compensation circuit is -127 ppm/°C. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor. Project supported by the National Natural Science Foundation of China (No. 61471159), the Natural Science Foundation of Heilongjiang Province (No. F201433), the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province (No. 2015018), and the Special Funds for Science and Technology Innovation Talents of Harbin in China (No. 2016RAXXJ016).

  1. Silicon Sensor and Detector Developments for the CMS Tracker Upgrade

    CERN Document Server

    D'Alessandro, Raffaello

    2011-01-01

    CMS started a campaign to identify the future silicon sensor technology baseline for a new Tracker for the high-luminosity phase of LHC, coupled to a new effective way of providing tracking information to the experiment trigger. To this end a large variety of 6'' wafers was acquired in different thicknesses and technologies at HPK and new detector module designs were investigated. Detector thicknesses ranging from 50$\\mu$m to 300$\\mu$m are under investigation on float zone, magnetic Czochralski and epitaxial material both in n-in-p and p-in-n versions. P-stop and p-spray are explored as isolation technology for the n-in-p type sensors as well as the feasibility of double metal routing on 6'' wafers. Each wafer contains different structures to answer different questions, e.g. influence of geometry, Lorentz angle, radiation tolerance, annealing behaviour, validation of read-out schemes. Dedicated process test-structures, as well as diodes, mini-sensors, long and very short strip sensors and real pixel sensors ...

  2. Characteristics research of pressure sensor based on nanopolysilicon thin films resistors

    Science.gov (United States)

    Zhao, Xiaofeng; Li, Dandan; Wen, Dianzhong

    2017-10-01

    To further improve the sensitivity temperature characteristics of pressure sensor, a kind of pressure sensor taking nanopolysilicon thin films as piezoresistors is proposed in this paper. On the basis of the microstructure analysis by X-ray diffraction (XRD) and scanning electron microscope (SEM) tests, the preparing process of nanopolysilicon thin films is optimized. The effects of film thickness and annealing temperature on the micro-structure of nanopolysilicon thin films were studied, respectively. In order to realize the measurement of external pressure, four nanopolysilicon thin films resistors were arranged at the edges of square silicon diaphragm connected to a Wheatstone bridge, and the chip of the sensor was designed and fabricated on a 〈100〉 orientation silicon wafer by microelectromechanical system (MEMS) technology. Experimental result shows that when I = 6.80 mA, the sensitivity of the sensor PS-1 is 0.308 mV/kPa, and the temperature coefficient of sensitivity (TCS) is about -1742 ppm/∘C in the range of -40-140∘C. It is possible to obviously improve the sensitivity temperature characteristics of pressure sensor by the proposed sensors.

  3. Performance of Honeywell silicon pressure transducers

    Digital Repository Service at National Institute of Oceanography (India)

    VijayKumar, K.; Joseph, A.; Desai, R.G.P.; Nagvekar, S.; Prabhudesai, S.; Damodaran, V.

    pressure. The precision pressure transducer – ruggedized (PPTR) manufactured by Honeywell is provided with a special “Hastelloy” material isolation-diaphragm to protect the transducer port against corrosive effects during its prolonged exposure...-scale output (an intelligent technique anufacturers to hide the non-linearity of the product at all data points below ore realistic estimate of linearity is obtained by ean of a few samples) based on the corresponding true ethod employed by performance...

  4. Results from a beam test of silicon strip sensors manufactured by Infineon Technologies AG

    Energy Technology Data Exchange (ETDEWEB)

    Dragicevic, M., E-mail: marko.dragicevic@oeaw.ac.at [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Auzinger, G. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); CERN, Geneva (Switzerland); Bartl, U. [Infineon Technologies Austria AG, Villach (Austria); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Gamerith, S.; Hacker, J. [Infineon Technologies Austria AG, Villach (Austria); König, A. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Infineon Technologies Austria AG, Villach (Austria); Kröner, F.; Kucher, E.; Moser, J.; Neidhart, T. [Infineon Technologies Austria AG, Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, Munich (Germany); Schustereder, W. [Infineon Technologies Austria AG, Villach (Austria); Treberspurg, W. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Wübben, T. [Infineon Technologies Austria AG, Villach (Austria)

    2014-11-21

    Most modern particle physics experiments use silicon based sensors for their tracking systems. These sensors are able to detect particles generated in high energy collisions with high spatial resolution and therefore allow the precise reconstruction of particle tracks. So far only a few vendors were capable of producing silicon strip sensors with the quality needed in particle physics experiments. Together with the European-based semiconductor manufacturer Infineon Technologies AG (Infineon) the Institute of High Energy Physics of the Austrian Academy of Sciences (HEPHY) developed planar silicon strip sensors in p-on-n technology. This work presents the first results from a beam test of strip sensors manufactured by Infineon.

  5. Sensor assembly method using silicon interposer with trenches for three-dimensional binocular range sensors

    Science.gov (United States)

    Nakajima, Kazuhiro; Yamamoto, Yuji; Arima, Yutaka

    2018-04-01

    To easily assemble a three-dimensional binocular range sensor, we devised an alignment method for two image sensors using a silicon interposer with trenches. The trenches were formed using deep reactive ion etching (RIE) equipment. We produced a three-dimensional (3D) range sensor using the method and experimentally confirmed that sufficient alignment accuracy was realized. It was confirmed that the alignment accuracy of the two image sensors when using the proposed method is more than twice that of the alignment assembly method on a conventional board. In addition, as a result of evaluating the deterioration of the detection performance caused by the alignment accuracy, it was confirmed that the vertical deviation between the corresponding pixels in the two image sensors is substantially proportional to the decrease in detection performance. Therefore, we confirmed that the proposed method can realize more than twice the detection performance of the conventional method. Through these evaluations, the effectiveness of the 3D binocular range sensor aligned by the silicon interposer with the trenches was confirmed.

  6. A simple sensing mechanism for wireless, passive pressure sensors.

    Science.gov (United States)

    Drazan, John F; Wassick, Michael T; Dahle, Reena; Beardslee, Luke A; Cady, Nathaniel C; Ledet, Eric H

    2016-08-01

    We have developed a simple wireless pressure sensor that consists of only three electrically isolated components. Two conductive spirals are separated by a closed cell foam that deforms when exposed to changing pressures. This deformation changes the capacitance and thus the resonant frequency of the sensors. Prototype sensors were submerged and wirelessly interrogated while being exposed to physiologically relevant pressures from 10 to 130 mmHg. Sensors consistently exhibited a sensitivity of 4.35 kHz/mmHg which is sufficient for resolving physiologically relevant pressure changes in vivo. These simple sensors have the potential for in vivo pressure sensing.

  7. Novel highly sensitive and wearable pressure sensors from conductive three-dimensional fabric structures

    International Nuclear Information System (INIS)

    Li, Jianfeng; Xu, Bingang

    2015-01-01

    Pressure sensors based on three-dimensional fabrics have all the excellent properties of the textile substrate: excellent compressibility, good air permeability and moisture transmission ability, which will find applications ranging from the healthcare industry to daily usage. In this paper, novel pressure sensors based on 3D spacer fabrics have been developed by a proposed multi-coating method. By this coating method, carbon black can be coated uniformly on the silicon elastomer which is attached and slightly cured on the 3D fabric surface beforehand. The as-made pressure sensors have good conductivity and can measure external pressure up to 283 kPa with an electrical conductivity range of 9.8 kΩ. The sensitivity of 3D fabric pressure sensors can be as high as 50.31×10 −3 kPa −1 , which is better than other textile based pressure sensors. When the as-made sensors are pressed, their electrical resistance will decrease because of more conductive connections and bending of fibers in the spacer layer. The sensing mechanism related to fiber bending has been explored by using an equivalent resistance model. The newly developed 3D sensor devices can be designed to exhibit different sensing performances by simply changing the structures of fabric substrate, which endows this kind of device more flexibility in related applications. (paper)

  8. Low Power and High Sensitivity MOSFET-Based Pressure Sensor

    International Nuclear Information System (INIS)

    Zhang Zhao-Hua; Ren Tian-Ling; Zhang Yan-Hong; Han Rui-Rui; Liu Li-Tian

    2012-01-01

    Based on the metal-oxide-semiconductor field effect transistor (MOSFET) stress sensitive phenomenon, a low power MOSFET pressure sensor is proposed. Compared with the traditional piezoresistive pressure sensor, the present pressure sensor displays high performances on sensitivity and power consumption. The sensitivity of the MOSFET sensor is raised by 87%, meanwhile the power consumption is decreased by 20%. (cross-disciplinary physics and related areas of science and technology)

  9. Design, fabrication and metrological evaluation of wearable pressure sensors.

    Science.gov (United States)

    Goy, C B; Menichetti, V; Yanicelli, L M; Lucero, J B; López, M A Gómez; Parodi, N F; Herrera, M C

    2015-04-01

    Pressure sensors are valuable transducers that are necessary in a huge number of medical application. However, the state of the art of compact and lightweight pressure sensors with the capability of measuring the contact pressure between two surfaces (contact pressure sensors) is very poor. In this work, several types of wearable contact pressure sensors are fabricated using different conductive textile materials and piezo-resistive films. The fabricated sensors differ in size, the textile conductor used and/or the number of layers of the sandwiched piezo-resistive film. The intention is to study, through the obtaining of their calibration curves, their metrological properties (repeatability, sensitivity and range) and determine which physical characteristics improve their ability for measuring contact pressures. It has been found that it is possible to obtain wearable contact pressure sensors through the proposed fabrication process with satisfactory repeatability, range and sensitivity; and that some of these properties can be improved by the physical characteristics of the sensors.

  10. Method for making a dynamic pressure sensor and a pressure sensor made according to the method

    Science.gov (United States)

    Zuckerwar, Allan J. (Inventor); Robbins, William E. (Inventor); Robins, Glenn M. (Inventor)

    1994-01-01

    A method for providing a perfectly flat top with a sharp edge on a dynamic pressure sensor using a cup-shaped stretched membrane as a sensing element is described. First, metal is deposited on the membrane and surrounding areas. Next, the side wall of the pressure sensor with the deposited metal is machined to a predetermined size. Finally, deposited metal is removed from the top of the membrane in small steps, by machining or lapping while the pressure sensor is mounted in a jig or the wall of a test object, until the true top surface of the membrane appears. A thin indicator layer having a color contrasting with the color of the membrane may be applied to the top of the membrane before metal is deposited to facilitate the determination of when to stop metal removal from the top surface of the membrane.

  11. Planar silicon sensors for the CMS Tracker upgrade

    CERN Document Server

    Junkes, Alexandra

    2013-01-01

    The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfills all requirements for detectors for the high-luminosity phase of the Large Hadron Collider (HL-LHC).A variety of silicon p-in-n and n-in-p test-sensors made from Float Zone, Deep-Diffused FZ and Magnetic Czochralski materials were manufactured by one single industrial producer, thus guaranteeing similar conditions for the production and design of the test-structures. Properties of different silicon materials and design choices have been systematically studied and compared.The samples have been irradiated with 1 MeV neutrons and protons corresponding to maximal fluences as expected for the positions of detector layers in the future tracker. Irradiations with protons of different energies (23 MeV and 23 GeV) have been performed to evaluate the energy dependence of the defect generation in oxygen rich material. All materials have been characterized before an...

  12. Precision Timing with Silicon Sensors for Use in Calorimetry

    Energy Technology Data Exchange (ETDEWEB)

    Bornheim, A. [Caltech; Ronzhin, A. [Fermilab; Kim, H. [Chicago U.; Bolla, G. [Fermilab; Pena, C. [Caltech; Xie, S. [Caltech; Apresyan, A. [Caltech; Los, S. [Fermilab; Spiropulu, M. [Caltech; Ramberg, E. [Fermilab

    2017-11-27

    The high luminosity upgrade of the Large Hadron Collider (HL-LHC) at CERN is expected to provide instantaneous luminosities of 5 × 1034 cm-2 s-1. The high luminosities expected at the HL-LHC will be accompanied by a factor of 5 to 10 more pileup compared with LHC conditions in 2015, causing general confusion for particle identification and event reconstruction. Precision timing allows to extend calorimetric measurements into such a high density environment by subtracting the energy deposits from pileup interactions. Calorimeters employing silicon as the active component have recently become a popular choice for the HL- LHC and future collider experiments which face very high radiation environments. We present studies of basic calorimetric and precision timing measurements using a prototype composed of tungsten absorber and silicon sensor as the active medium. We show that for the bulk of electromagnetic showers induced by electrons in the range of 20 GeV to 30 GeV, we can achieve time resolutions better than 25 ps per single pad sensor.

  13. Packaging of silicon sensors for microfluidic bio-analytical applications

    International Nuclear Information System (INIS)

    Wimberger-Friedl, Reinhold; Prins, Menno; Megens, Mischa; Dittmer, Wendy; Witz, Christiane de; Nellissen, Ton; Weekamp, Wim; Delft, Jan van; Ansems, Will; Iersel, Ben van

    2009-01-01

    A new industrial concept is presented for packaging biosensor chips in disposable microfluidic cartridges to enable medical diagnostic applications. The inorganic electronic substrates, such as silicon or glass, are integrated in a polymer package which provides the electrical and fluidic interconnections to the world and provides mechanical strength and protection for out-of-lab use. The demonstrated prototype consists of a molded interconnection device (MID), a silicon-based giant magneto-resistive (GMR) biosensor chip, a flex and a polymer fluidic part with integrated tubing. The various processes are compatible with mass manufacturing and run at a high yield. The devices show a reliable electrical interconnection between the sensor chip and readout electronics during extended wet operation. Sandwich immunoassays were carried out in the cartridges with surface functionalized sensor chips. Biological response curves were determined for different concentrations of parathyroid hormone (PTH) on the packaged biosensor, which demonstrates the functionality and biocompatibility of the devices. The new packaging concept provides a platform for easy further integration of electrical and fluidic functions, as for instance required for integrated molecular diagnostic devices in cost-effective mass manufacturing

  14. Precision Timing with Silicon Sensors for Use in Calorimetry

    Science.gov (United States)

    Bornheim, A.; Ronzhin, A.; Kim, H.; Bolla, G.; Pena, C.; Xie, S.; Apresyan, A.; Los, S.; Spiropulu, M.; Ramberg, E.

    2017-11-01

    The high luminosity upgrade of the Large Hadron Collider (HL-LHC) at CERN is expected to provide instantaneous luminosities of 5 × 1034 cm -2 s -1. The high luminosities expected at the HL-LHC will be accompanied by a factor of 5 to 10 more pileup compared with LHC conditions in 2015, causing general confusion for particle identification and event reconstruction. Precision timing allows to extend calorimetric measurements into such a high density environment by subtracting the energy deposits from pileup interactions. Calorimeters employing silicon as the active component have recently become a popular choice for the HL- LHC and future collider experiments which face very high radiation environments. We present studies of basic calorimetric and precision timing measurements using a prototype composed of tungsten absorber and silicon sensor as the active medium. We show that for the bulk of electromagnetic showers induced by electrons in the range of 20 GeV to 30 GeV, we can achieve time resolutions better than 25 ps per single pad sensor.

  15. A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

    Directory of Open Access Journals (Sweden)

    Zong Yao

    2016-06-01

    Full Text Available This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts, the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments.

  16. All-plastic fiber-based pressure sensor

    DEFF Research Database (Denmark)

    Bundalo, Ivan-Lazar; Lwin, Richard; Leon-Saval, Sergio

    2016-01-01

    We present a feasibility study and a prototype of an all-plastic fiber-based pressure sensor. The sensor is based on long period gratings inscribed for the first time to the best of our knowledge by a CO2 laser in polymethyl methacrylate (PMMA) microstructured fibers and coupled to a pod......-like transducer that converts pressure to strain. The sensor prototype was characterized for pressures up to 150 mbars, and various parameters related to its construction were also characterized in order to enhance sensitivity. We consider this sensor in the context of future applications in endoscopic pressure...... sensors....

  17. Parylene-on-oil packaging for long-term implantable pressure sensors.

    Science.gov (United States)

    Shapero, Aubrey M; Liu, Yang; Tai, Yu-Chong

    2016-08-01

    This paper reports and analyzes the feasibility study of a parylene-on-oil encapsulation packaging method of pressure sensors targeted for long-term implantation. Commercial barometric digital-output pressure sensors are enclosed in silicone oil and then encapsulated in situ with parylene-C or -D (PA-C, PA-D) chemical vapor deposition. Experimentally, sensors encapsulated with 30,000 cSt silicone oil and 27 μm PA-D show good performance for 6 weeks in 77 °C saline with >99 % of original sensitivity, corresponding to an extrapolated lifetime of around 21 months in 37 °C saline. This work shows that, with proper designs, such a packaging method can preserve the original pressure sensor sensitivity without offset, validated throughout accelerated lifetime tests. In experiments, wires on the prototypes are used for external electronics but it is found that they contributed to early failures, which would be absent in real wireless versions, indicating a potential for even longer lifetimes. Finally, a verified model is presented to predict the pressure sensor sensitivity of parylene-on-oil packaging with and without the presence of a bubble in the oil.

  18. Quality assurance tests of the CBM silicon tracking system sensors with an infrared laser

    Energy Technology Data Exchange (ETDEWEB)

    Teklishyn, Maksym [FAIR GmbH, Darmstadt (Germany); KINR, Kyiv (Ukraine); Collaboration: CBM-Collaboration

    2016-07-01

    Double-sided 300 μm thick silicon microstrip sensors are planned to be used in the Silicon Tracking System (STS) of the future CBM experiment. Different tools, including an infrared laser, are used to induce charge in the sensor medium to study the sensor response. We use present installation to develop a procedure for the sensor quality assurance during mass production. The precise positioning of the laser spot allows to make a clear judgment about the sensor interstrip gap response which provides information about the charge distribution inside the sensor medium. Results are compared with the model estimations.

  19. Sensitivity enhancement of polysilicon piezo-resistive pressure sensors with phosphorous diffused resistors

    International Nuclear Information System (INIS)

    Sivakumar, K; Dasgupta, N; Bhat, K N; Natarajan, K

    2006-01-01

    It is generally accepted that the piezo-resistive coefficient in single crystal silicon is higher when P-type impurities such as boron are used for doping the resistors. In this paper we demonstrate that the sensitivity of polycrystalline silicon piezo-resistive pressure sensors can be enhanced considerably when phosphorus diffusion source is used instead of boron dopant for realizing the piezo-resistors. Pressure sensors have been designed and fabricated with the polycrystalline piezo-resistors connected in the form of a Wheatstone bridge and laid out on thermal oxide grown on membranes obtained with a Silicon On Insulator (SOI) approach. The SOI wafers required for this purpose have been realized in-house by Silicon Fusion Bonding (SFB) and etch back technique in our laboratory. This approach provides excellent isolation between the resistors and enables zero temperature coefficient of the polysilicon resistor. The results obtained in our laboratory have clearly demonstrated that by optimizing the phosphorus diffusion temperature and duration, it is possible to achieve sensitivities in excess of 20mV /Bar for bridge input voltage of 10V, with linearity within 1% over a differential pressure range up to 10Bar (10 6 Pascal), and burst pressure in excess of 50 Bar as compared to the 10mV /Bar sensitivity obtained with boron doped polysilicon piezo-resistors. This enhancement is attributed to grain boundary passivation by phosphorous atoms

  20. Touch-mode capacitive pressure sensor with graphene-polymer heterostructure membrane

    Science.gov (United States)

    Berger, Christian; Phillips, Rory; Pasternak, Iwona; Sobieski, Jan; Strupinski, Wlodek; Vijayaraghavan, Aravind

    2018-01-01

    We describe the fabrication and characterisation of a touch-mode capacitive pressure sensor (TMCPS) with a robust design that comprises a graphene-polymer heterostructure film, laminated onto the silicon dioxide surface of a silicon wafer, incorporating a SU-8 spacer grid structure. The spacer grid structure allows the flexible graphene-polymer film to be partially suspended above the substrate, such that a pressure on the membrane results in a reproducible deflection, even after exposing the membrane to pressures over 10 times the operating range. Sensors show reproducible pressure transduction in water submersion at varying depths under static and dynamic loading. The measured capacitance change in response to pressure is in good agreement with an analytical model of clamped plates in touch mode. The device shows a pressure sensitivity of 27.1 +/- 0.5 fF Pa-1 over a pressure range of 0.5 kPa-8.5 kPa. In addition, we demonstrate the operation of this device as a force-touch sensor in air.

  1. Wireless Capacitive Pressure Sensor Operating up to 400 Celcius from 0 to 100 psi Utilizing Power Scavenging

    Science.gov (United States)

    Scardelletti, Maximilian C.; Ponchak, George E.; Harsh, Kevin; Mackey, Jonathan A.; Meredith, Roger D.; Zorman, Christian A.; Beheim, Glenn M.; Dynys, Frederick W.; Hunter, Gary W.

    2014-01-01

    In this paper, a wireless capacitive pressure sensor developed for the health monitoring of aircraft engines has been demonstrated. The sensing system is composed of a Clapp-type oscillator that operates at 131 MHz. The Clapp oscillator is fabricated on a alumina substrate and consists of a Cree SiC (silicon carbide) MESFET (Metal Semiconductor Field Effect Transistors), this film inductor, Compex chip capacitors and Sporian Microsystem capacitive pressure sensor. The resonant tank circuit within the oscillator is made up of the pressure sensor and a spiral thin film inductor, which is used to magnetically couple the wireless pressure sensor signal to a coil antenna placed over 1 meter away. 75% of the power used to bias the sensing system is generated from thermoelectric power modules. The wireless pressure sensor is operational at room temperature through 400 C from 0 to 100 psi and exhibits a frequency shift of over 600 kHz.

  2. Quality assurance and irradiation studies on CMS silicon strip sensors

    CERN Document Server

    Furgeri, Alexander

    The high luminosity at the Large Hadron Collider at the European Particle Physics Laboratory CERN in Geneva causes a harsh radiation environment for the detectors. The most inner layers of the tracker are irradiated to an equivalent fluence of 1.6e14 1MeV-neutrons per cmˆ2. The radiation causes damage in the silicon lattice of the sensors. This increases the leakage current and changes the full depletion voltage. Both of these parameters are after irradiation neither stable with time nor with temperatures above 0oC. This thesis presents the changes of the leakage currents, the full depletion voltages, and all strip parameters of the sensors after proton and neutron irradiation. After irradiation annealing studies have been carried out. All observed effects are used to simulate the evolution of full depletion voltage for different annealing times and annealing temperatures in order to keep the power consumption as low as possible. From the observed radiation damage and annealing effects the sensors of the tra...

  3. A beam monitor using silicon pixel sensors for hadron therapy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhen, E-mail: zwang@mails.ccnu.edu.cn; Zou, Shuguang; Fan, Yan; Liu, Jun; Sun, Xiangming, E-mail: sphy2007@126.com; Wang, Dong; Kang, Huili; Sun, Daming; Yang, Ping; Pei, Hua; Huang, Guangming; Xu, Nu; Gao, Chaosong; Xiao, Le

    2017-03-21

    We report the design and test results of a beam monitor developed for online monitoring in hadron therapy. The beam monitor uses eight silicon pixel sensors, Topmetal-II{sup -}, as the anode array. Topmetal-II{sup -} is a charge sensor designed in a CMOS 0.35 µm technology. Each Topmetal-II{sup -} sensor has 72×72 pixels and the pixel size is 83×83 µm{sup 2}. In our design, the beam passes through the beam monitor without hitting the electrodes, making the beam monitor especially suitable for monitoring heavy ion beams. This design also reduces radiation damage to the beam monitor itself. The beam monitor is tested with a carbon ion beam at the Heavy Ion Research Facility in Lanzhou (HIRFL). Results indicate that the beam monitor can measure position, incidence angle and intensity of the beam with a position resolution better than 20 µm, angular resolution about 0.5° and intensity statistical accuracy better than 2%.

  4. Novel Designs for Application Specific MEMS Pressure Sensors

    DEFF Research Database (Denmark)

    Fragiacomo, Giulio; Reck, Kasper; Lorenzen, Lasse Vestergaard

    2010-01-01

    and high capacitive output signal (more than 100 pF) is depicted. An optical pressure sensor intrinsically immune to electromagnetic interference, with large pressure range (0-350 bar) and a sensitivity of 1 pm/bar is presented. Finally, a resonating wireless pressure sensor power source free...

  5. Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector

    OpenAIRE

    Dannheim, D.; Koetz, U.; Coldewey, C.; Fretwurst, E.; Garfagnini, A.; Klanner, R.; Martens, J.; Koffeman, E.; Tiecke, H.; Carlin, R.

    2002-01-01

    To fully exploit the HERA-II upgrade,the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon micro-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 micrometers, with five intermediate strips (20 micrometer strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sen...

  6. Development of Silicon Sensor Characterization System for Future High Energy Physics Experiments

    OpenAIRE

    Preeti kumari; Kavita Lalwani; Ranjeet Dalal; Geetika Jain; Ashutosh Bhardwaj; Kirti Ranjan

    2015-01-01

    The Compact Muon Solenoid (CMS) is one of the general purpose experiments at the Large Hadron Collider (LHC), CERN and has its Tracker built of all silicon strip and pixel sensors. Si sensors are expected to play extremely important role in the upgrades of the existing Tracker for future high luminosity environment and will also be used in future lepton colliders. However, properties of the silicon sensors have to be carefully understood before they can be put in the extremely high luminos...

  7. Investigation of the impact of mechanical stress on the properties of silicon sensor modules for the ATLAS Phase II upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Stegler, Martin; Polay, Luise; Spehrlich, Dennis; Bloch, Ingo [DESY, Zeuthen (Germany)

    2016-07-01

    The new ATLAS tracker for phase II will be composed of silicon pixel and strip sensor modules. Such a module consists of silicon sensors, boards and readout chips. In a currently ongoing study new adhesives to connect the modular components thermally and mechanically are examined. It was shown that the silicon sensor is exposed to mechanical stress when part of a module. Mechanical stress can cause damage to a sensor and can change the tensors of electrical properties. The study of the effects of mechanical stress on characteristics of the silicon sensor modules are the focus in this presentation. The thermal induced tensile stress near to the surface of a silicon sensor build in a module was simulated. A four point bending setup was used to measure the maximum tensile stress of silicon and to verify the piezoresistive effect on ATLAS07 sensors. The results of the electrical measurements and simulations of stressed silicon sensor modules are shown in the presentation.

  8. Novel fabric pressure sensors: design, fabrication, and characterization

    International Nuclear Information System (INIS)

    Wang, Yangyong; Hua, Tao; Zhu, Bo; Li, Qiao; Yi, Weijing; Tao, Xiaoming

    2011-01-01

    Soft and pliable pressure sensors are essential elements in wearable electronics which have wide applications in modern daily lives. This paper presents a family of fabric pressure sensors made by sandwiching a piece of resistive fabric strain sensing element between two tooth-structured layers of soft elastomers. The pressure sensors are capable of measuring pressure from 0 to 2000 kPa, covering the whole range of human–machine interactions. A pressure sensitivity of up to 2.98 × 10 −3 kPa −1 was obtained. Theoretical modeling was conducted based on an energy method to predict the load–displacement relationship for various sensor configurations. By adjusting the Young's modulus of the two conversion layers, as well as the geometrical dimensions, the measurement ranges, and sensitivities of the sensors can be quantitatively determined. The sensors are being used for pressure measurements between the human body and garments, shoes, beds, and chairs

  9. Simulation and characterization of silicon nanopillar-based nanoparticle sensors

    Science.gov (United States)

    Wasisto, Hutomo Suryo; Merzsch, Stephan; Huang, Kai; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2013-05-01

    Nanopillar-based structures hold promise as highly sensitive resonant mass sensors for a new generation of aerosol nanoparticle (NP) detecting devices because of their very small masses. In this work, the possible use of a silicon nanopillar (SiNPL) array as a nanoparticle sensor is investigated. The sensor structures are created and simulated using a finite element modeling (FEM) tool of COMSOL Multiphysics 4.3 to study the resonant characteristics and the sensitivity of the SiNPL for femtogram NP mass detection. Instead of using 2D plate models or simple single 3D cylindrical pillar models, FEM is performed with SiNPLs in 3D structures based on the real geometry of experimental SiNPL arrays employing a piezoelectric stack for resonant excitation. In order to achieve an optimal structure and investigate the etching effect on the fabricated resonators, SiNPLs with different designs of meshes, sidewall profiles, lengths, and diameters are simulated and analyzed. To validate the FEM results, fabricated SiNPLs with a high aspect ratio of ~60 are employed and characterized in resonant frequency measurements. SiNPLs are mounted onto a piezoactuator inside a scanning electron microscope (SEM) chamber which can excite SiNPLs into lateral vibration. The measured resonant frequencies of the SiNPLs with diameters about 650 nm and heights about 40 μm range from 434.63 kHz to 458.21 kHz, which agree well with those simulated by FEM. Furthermore, the deflection of a SiNPL can be enhanced by increasing the applied piezoactuator voltage. By depositing different NPs (i.e., carbon, TiO2, SiO2, Ag, and Au NPs) on the SiNPLs, the decrease of the resonant frequency is clearly shown confirming their potential to be used as airborne NP mass sensor with femtogram resolution level.

  10. Spatially digitized tactile pressure sensors with tunable sensitivity and sensing range.

    Science.gov (United States)

    Choi, Eunsuk; Sul, Onejae; Hwang, Soonhyung; Cho, Joonhyung; Chun, Hyunsuk; Kim, Hongjun; Lee, Seung-Beck

    2014-10-24

    When developing an electronic skin with touch sensation, an array of tactile pressure sensors with various ranges of pressure detection need to be integrated. This requires low noise, highly reliable sensors with tunable sensing characteristics. We demonstrate the operation of tactile pressure sensors that utilize the spatial distribution of contact electrodes to detect various ranges of tactile pressures. The device consists of a suspended elastomer diaphragm, with a carbon nanotube thin-film on the bottom, which makes contact with the electrodes on the substrate with applied pressure. The electrodes separated by set distances become connected in sequence with tactile pressure, enabling consecutive electrodes to produce a signal. Thus, the pressure is detected not by how much of a signal is produced but by which of the electrodes is registering an output. By modulating the diaphragm diameter, and suspension height, it was possible to tune the pressure sensitivity and sensing range. Also, adding a fingerprint ridge structure enabled the sensor to detect the periodicity of sub-millimeter grating patterns on a silicon wafer.

  11. Flight testing of a luminescent surface pressure sensor

    Science.gov (United States)

    Mclachlan, B. G.; Bell, J. H.; Espina, J.; Gallery, J.; Gouterman, M.; Demandante, C. G. N.; Bjarke, L.

    1992-01-01

    NASA ARC has conducted flight tests of a new type of aerodynamic pressure sensor based on a luminescent surface coating. Flights were conducted at the NASA ARC-Dryden Flight Research Facility. The luminescent pressure sensor is based on a surface coating which, when illuminated with ultraviolet light, emits visible light with an intensity dependent on the local air pressure on the surface. This technique makes it possible to obtain pressure data over the entire surface of an aircraft, as opposed to conventional instrumentation, which can only make measurements at pre-selected points. The objective of the flight tests was to evaluate the effectiveness and practicality of a luminescent pressure sensor in the actual flight environment. A luminescent pressure sensor was installed on a fin, the Flight Test Fixture (FTF), that is attached to the underside of an F-104 aircraft. The response of one particular surface coating was evaluated at low supersonic Mach numbers (M = 1.0-1.6) in order to provide an initial estimate of the sensor's capabilities. This memo describes the test approach, the techniques used, and the pressure sensor's behavior under flight conditions. A direct comparison between data provided by the luminescent pressure sensor and that produced by conventional pressure instrumentation shows that the luminescent sensor can provide quantitative data under flight conditions. However, the test results also show that the sensor has a number of limitations which must be addressed if this technique is to prove useful in the flight environment.

  12. Porous Silicon Hydrogen Sensor at Room Temperature: The Effect of Surface Modification and Noble Metal Contacts

    Directory of Open Access Journals (Sweden)

    Jayita KANUNGO

    2009-04-01

    Full Text Available Porous silicon (PS was fabricated by anodization of p-type crystalline silicon of resistivity 2-5 Ω cm. After formation, the PS surface was modified by the solution containing noble metal like Pd. Pd-Ag catalytic contact electrodes were deposited on porous silicon and on p-Silicon to fabricate Pd-Ag/PS/p-Si/Pd-Ag sensor structure to carry out the hydrogen sensing experiments. The Sensor was exposed to 1% hydrogen in nitrogen as carrier gas at room temperature (270C. Pd modified sensor showed minimum fluctuations and consistent performance with 86% response, response time and recovery time of 24 sec and 264 sec respectively. The stability experiments were studied for both unmodified and Pd modified sensor structures for a period of about 24 hours and the modified sensors showed excellent durability with no drift in response behavior.

  13. A VDF/TrFE copolymer on silicon pyroelectric sensor: design considerations and experiments

    NARCIS (Netherlands)

    Setiadi, D.; Setiadi, D.; Regtien, Paulus P.L.

    1995-01-01

    For an optimal design of a VDF/TrFE (vinylidene fluoride trifluoroethylene) copolymer-on-silicon pyroelectric sensor, the one-dimensional diffusion equation is solved for the pyroelectric multilayer structure. Output current and voltage of the sensor are calculated. Improvement of the sensor can be

  14. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    DEFF Research Database (Denmark)

    Duun, Sune Bro; Haahr, Rasmus Grønbek; Hansen, Ole

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized...

  15. Novel designs for application specific MEMS pressure sensors.

    Science.gov (United States)

    Fragiacomo, Giulio; Reck, Kasper; Lorenzen, Lasse; Thomsen, Erik V

    2010-01-01

    In the framework of developing innovative microfabricated pressure sensors, we present here three designs based on different readout principles, each one tailored for a specific application. A touch mode capacitive pressure sensor with high sensitivity (14 pF/bar), low temperature dependence and high capacitive output signal (more than 100 pF) is depicted. An optical pressure sensor intrinsically immune to electromagnetic interference, with large pressure range (0-350 bar) and a sensitivity of 1 pm/bar is presented. Finally, a resonating wireless pressure sensor power source free with a sensitivity of 650 KHz/mmHg is described. These sensors will be related with their applications in harsh environment, distributed systems and medical environment, respectively. For many aspects, commercially available sensors, which in vast majority are piezoresistive, are not suited for the applications proposed.

  16. Novel Designs for Application Specific MEMS Pressure Sensors

    Directory of Open Access Journals (Sweden)

    Erik V. Thomsen

    2010-10-01

    Full Text Available In the framework of developing innovative microfabricated pressure sensors, we present here three designs based on different readout principles, each one tailored for a specific application. A touch mode capacitive pressure sensor with high sensitivity (14 pF/bar, low temperature dependence and high capacitive output signal (more than 100 pF is depicted. An optical pressure sensor intrinsically immune to electromagnetic interference, with large pressure range (0–350 bar and a sensitivity of 1 pm/bar is presented. Finally, a resonating wireless pressure sensor power source free with a sensitivity of 650 KHz/mmHg is described. These sensors will be related with their applications in  harsh environment, distributed systems and medical environment, respectively. For many aspects, commercially available sensors, which in vast majority are piezoresistive, are not suited for the applications proposed.

  17. Evaluation of Pressure Capacitive Sensors for Application in Grasping and Manipulation Analysis.

    Science.gov (United States)

    Pessia, Paola; Cordella, Francesca; Schena, Emiliano; Davalli, Angelo; Sacchetti, Rinaldo; Zollo, Loredana

    2017-12-08

    The analysis of the human grasping and manipulation capabilities is paramount for investigating human sensory-motor control and developing prosthetic and robotic hands resembling the human ones. A viable solution to perform this analysis is to develop instrumented objects measuring the interaction forces with the hand. In this context, the performance of the sensors embedded in the objects is crucial. This paper focuses on the experimental characterization of a class of capacitive pressure sensors suitable for biomechanical analysis. The analysis was performed in three loading conditions (Distributed load, 9 Tips load, and Wave-shaped load, thanks to three different inter-elements) via a traction/compression testing machine. Sensor assessment was also carried out under human- like grasping condition by placing a silicon material with the same properties of prosthetic cosmetic gloves in between the sensor and the inter-element in order to simulate the human skin. Data show that the input-output relationship of the analyzed, sensor is strongly influenced by both the loading condition (i.e., type of inter-element) and the grasping condition (with or without the silicon material). This needs to be taken into account to avoid significant measurement error. To go over this hurdle, the sensors have to be calibrated under each specific condition in order to apply suitable corrections to the sensor output and significantly improve the measurement accuracy.

  18. 40 CFR 1065.215 - Pressure transducers, temperature sensors, and dewpoint sensors.

    Science.gov (United States)

    2010-07-01

    ... sensors, and dewpoint sensors. 1065.215 Section 1065.215 Protection of Environment ENVIRONMENTAL... Measurement of Engine Parameters and Ambient Conditions § 1065.215 Pressure transducers, temperature sensors, and dewpoint sensors. (a) Application. Use instruments as specified in this section to measure...

  19. Silicon–glass-based single piezoresistive pressure sensors for harsh environment applications

    International Nuclear Information System (INIS)

    San, Haisheng; Zhang, Hong; Zhang, Qiang; Yu, Yuxi; Chen, Xuyuan

    2013-01-01

    Silicon–glass (Si–glass)-based single piezoresistive pressure sensors were designed and fabricated by standard MEMS technology. The single piezoresistive sensing element was designed to be on the lower surface of the silicon diaphragm and be vacuum-sealed in a Si–glass cavity, which form a self-packaging protection structure helpful to the applications of sensors in harsh media. The pressure sensors were fabricated using a Si–glass anodic bonding technique, and the embedded Al feedthrough lines at the Si–glass interface are used to realize the electrical connections between the piezo-sensing element and the electrode-pads, and two larger-size electrode-pads are fabricated for realizing the soldered electrical connection between the sensor and the external circuit. The performance of the pressure sensors was characterized by a pressure test system at different temperature conditions. The temperature compensation was performed by the difference between the output voltage at zero-pressure and the output at operation pressure. The measurement results show that the sensitivity is 24 mV V –1 MPa −1 , the coefficient of sensitivity is 0.14% FS °C –1 , and both the zero-point offset and the temperature coefficient of offset are equal to zero, which are able to meet the commercial application requirements. However, a nonlinearity of 5.2% FS caused by the balloon effect would considerably worsen the accuracy of the pressure sensor. It is suggested to reduce the balloon effect by using a bossed-diaphragm structure in the pressure sensor. (paper)

  20. Fully wireless pressure sensor based on endoscopy images

    Science.gov (United States)

    Maeda, Yusaku; Mori, Hirohito; Nakagawa, Tomoaki; Takao, Hidekuni

    2018-04-01

    In this paper, the result of developing a fully wireless pressure sensor based on endoscopy images for an endoscopic surgery is reported for the first time. The sensor device has structural color with a nm-scale narrow gap, and the gap is changed by air pressure. The structural color of the sensor is acquired from camera images. Pressure detection can be realized with existing endoscope configurations only. The inner air pressure of the human body should be measured under flexible-endoscope operation using the sensor. Air pressure monitoring, has two important purposes. The first is to quantitatively measure tumor size under a constant air pressure for treatment selection. The second purpose is to prevent the endangerment of a patient due to over transmission of air. The developed sensor was evaluated, and the detection principle based on only endoscopy images has been successfully demonstrated.

  1. Elastomeric polymer resonant waveguide grating based pressure sensor

    International Nuclear Information System (INIS)

    Song, Fuchuan; Xie, Antonio Jou; Seo, Sang-Woo

    2014-01-01

    In this paper, we demonstrate an elastomeric polymer resonant waveguide grating structure to be used as a pressure sensor. The applied pressure is measured by optical resonance spectrum peak shift. The sensitivity—as high as 86.74 pm psi −1 or 12.58 pm kPa −1 —has been experimentally obtained from a fabricated sensor. Potentially, the sensitivity of the demonstrated sensor can be tuned to different pressure ranges by the choices of elastic properties and layer thicknesses of the waveguide and cladding layers. The simulation results agree well with experimental results and indicate that the dominant effect on the sensor is the change of grating period when external pressure is applied. Based on the two-dimensional planar structure, the demonstrated sensor can be used to measure applied surface pressure optically, which has potential applications for optical ultrasound imaging and pressure wave detection/mapping

  2. Design and simulation analysis of a novel pressure sensor based on graphene film

    Science.gov (United States)

    Nie, M.; Xia, Y. H.; Guo, A. Q.

    2018-02-01

    A novel pressure sensor structure based on graphene film as the sensitive membrane was proposed in this paper, which solved the problem to measure low and minor pressure with high sensitivity. Moreover, the fabrication process was designed which can be compatible with CMOS IC fabrication technology. Finite element analysis has been used to simulate the displacement distribution of the thin movable graphene film of the designed pressure sensor under the different pressures with different dimensions. From the simulation results, the optimized structure has been obtained which can be applied in the low measurement range from 10hPa to 60hPa. The length and thickness of the graphene film could be designed as 100μm and 0.2μm, respectively. The maximum mechanical stress on the edge of the sensitive membrane was 1.84kPa, which was far below the breaking strength of the silicon nitride and graphene film.

  3. A CMOS pressure sensor with integrated interface for passive RFID applications

    International Nuclear Information System (INIS)

    Deng, Fangming; He, Yigang; Wu, Xiang; Fu, Zhihui

    2014-01-01

    This paper presents a CMOS pressure sensor with integrated interface for passive RFID sensing applications. The pressure sensor consists of three parts: top electrode, dielectric layer and bottom electrode. The dielectric layer consists of silicon oxide and an air gap. The bottom electrode is made of polysilicon. The gap is formed by sacrificial layer release and the Al vapor process is used to seal the gap and form the top electrode. The sensor interface is based on phase-locked architecture, which allows the use of fully digital blocks. The proposed pressure sensor and interface is fabricated in a 0.18 μm CMOS process. The measurement results show the pressure sensor achieves excellent linearity with a sensitivity of 1.2 fF kPa −1 . The sensor interface consumes only 1.1 µW of power at 0.5 V voltage supply, which is at least an order of magnitude better than state-of-the-art designs. (paper)

  4. Design and Fabrication of a Piezoresistive Pressure Sensor for Ultra High Temperature Environment

    International Nuclear Information System (INIS)

    Zhao, L B; Zhao, Y L; Jiang, Z D

    2006-01-01

    In order to solve the pressure measurement problem in the harsh environment, a piezoresistive pressure sensor has been developed, which can be used under high temperature above 200 deg. C and is able to endure instantaneous ultra high temperature (2000deg. C, duration≤2s) impact. Based on the MEMS (Micro Electro-Mechanical System) and integrated circuit technology, the piezoresistive pressure sensor's sensitive element was fabricated and constituted by silicon substrate, a thin buried silicon dioxide layer, four p-type resistors in the measuring circuit layer by boron ion implantation and photolithography, the top SiO2 layer by oxidation, stress matching Si3N4 layer, and a Ti-Pt-Au beam lead layer for connecting p-type resistors by sputtering. In order to decrease the leak-current influence to sensor in high temperature above 200deg. C, the buried SiO2 layer with the thickness 367 nm was fabricated by the SIMOX (Separation by Implantation of Oxygen) technology, which was instead of p-n junction to isolate the upper measuring circuit layer from Si substrate. In order to endure instantaneous ultra high temperature impact, the mechanical structure with cantilever and diaphragm and transmitting beam was designed. By laser welding and high temperature packaging technology, the high temperature piezoresistive pressure sensor was fabricated with range of 120MPa. After the thermal compensation, the sensor's thermal zero drift k 0 and thermal sensitivity drift k s were easy to be less than 3x10 -4 FS/deg. C. The experimental results show that the developed piezoresistive pressure sensor has good performances under high temperature and is able to endure instantaneous ultra high temperature impact, which meets the requirements of modern industry, such as aviation, oil, engine, etc

  5. Silicon sensors for the upgrades of the CMS pixel detector

    International Nuclear Information System (INIS)

    Centis Vignali, Matteo

    2015-12-01

    Hamburg will be 120 MHz/cm 2 . For this rate the modules' efficiency has been measured to be 99%. In view of the module production, the energy calibration procedure has been automated. The modules assigned to the Hamburg production center should be completed by the end of February 2016. For the phase II upgrade, thin silicon sensors with an active thickness of 100 μm irradiated with protons up to Φ eq =1.3.10 16 cm -2 have been characterized. The charge collection efficiency has been measured using pad diodes. Charge multiplication effects have been observed for both n- and p-bulk sensors. P-bulk strip sensors with an active thickness of 100 and 200 μm have been characterized with a beam test. The signal of these sensors lies between 4000 and 5000 e - after a fluence of 1.3.10 16 cm -2 . The 200 μm thick sensors require a higher bias voltage than the 100 μm thick sensors to reach this signal height. The threshold necessary to obtain 95% detection efficiency is found to be around 2000 e - for the 100 μm thick sensors.

  6. Experience gained with capacitive pressure sensor noise analysis

    International Nuclear Information System (INIS)

    Ballestrin, J.; Blazquez, J.

    1996-01-01

    Due to safety requirements, pressure sensors in a nuclear power plant must be kept under surveillance. The dynamics of the capacitive type Rosemount sensors is known. Sensor response time to a pressure ramp is the usual quantity required and it can be calculated. The noise signals contain the sensor dynamics, but in this case other irrelevant information from the plant is held, which disturbs the results. So, the signals must be conditioned previously. Also, it is necessary to do a process in order to separate the pressure sensor dynamics and to get a stationary signal. This can be done by using the autocorrelation function and filtering. Deterministic steps have been made and a relationship between the sensor response time, and the static pressure has been found. (author)

  7. Touch mode micromachined capacitive pressure sensor with signal conditioning electronics

    DEFF Research Database (Denmark)

    Fragiacomo, Giulio; Eriksen, Gert F.; Christensen, Carsten

    2010-01-01

    In the last decades, pressure sensors have been one of the greatest successes of the MEMS industry. Many companies are using them in a variety of applications from the automotive to the environmental field. Currently piezoresistive pressure sensors are the most developed, and a well established t...

  8. Design, fabrication and characterization of the first AC-coupled silicon microstrip sensors in India

    International Nuclear Information System (INIS)

    Aziz, T; Chendvankar, S R; Mohanty, G B; Patil, M R; Rao, K K; Rani, Y R; Rao, Y P P; Behnamian, H; Mersi, S; Naseri, M

    2014-01-01

    This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor on a four-inch wafer. After finding suitable test procedures for characterizing these AC coupled sensors, we fine-tuned various process parameters in order to produce sensors of the desired specifications

  9. The silicon sensors for the Inner Tracker of the Compact Muon Solenoid Experiment

    International Nuclear Information System (INIS)

    Krammer, M.

    2003-01-01

    Full text: The Inner Tracker of the Compact Muon Solenoid Experiment, at present under construction, will consist of more than 24000 silicon strip sensors arranged in 10 central concentric layers and 2 X 9 discs at both ends. The total sensitive silicon area will exceed 200 m 2 . The silicon sensors are produced in various thicknesses and geometries. Each sensor has 512 or 768 implanted strips which will allow to measure the position of traversing high energy charged particles. This paper a short overview of the CMS tracker system. Subsequently the design of the silicon sensors is explained with special emphasis on the radiation hardness and on the high voltage stability of the sensors. Two companies share the production of these sensors. The quality of the sensors is extensively checked by several laboratories associated with CMS. Important electrical parameters are measured on the sensors themselves. In addition, dedicated test structures were designed by CMS which allow the monitoring of many parameters sensitive to the production process. By May 2003 about 3000 sensors were delivered and a large fraction of these sensors and tests structures was measured. A summary of these measurements will be given and the main results will be discussed

  10. Optical Pressure-Temperature Sensor for a Combustion Chamber

    Science.gov (United States)

    Wiley, John; Korman, Valentin; Gregory, Don

    2008-01-01

    A compact sensor for measuring temperature and pressure in a combusti on chamber has been proposed. The proposed sensor would include two optically birefringent, transmissive crystalline wedges: one of sapph ire (Al2O3) and one of magnesium oxide (MgO), the optical properties of both of which vary with temperature and pressure. The wedges wou ld be separated by a vapor-deposited thin-film transducer, which wou ld be primarily temperaturesensitive (in contradistinction to pressur e- sensitive) when attached to a crystalline substrate. The sensor w ould be housed in a rugged probe to survive the extreme temperatures and pressures in a combustion chamber.

  11. Studies of adhesives and metal contacts on silicon strip sensors for the ATLAS Inner Tracker

    OpenAIRE

    Poley, Anne-Luise

    2018-01-01

    This thesis presents studies investigating the use of adhesives on the active area of silicon strip sensors for the construction of silicon strip detector modules for the ATLAS Phase-II Upgrade. 60 ATLAS07 miniature sensors were tested using three UV cure glues in comparison with the current baseline glue (a non-conductive epoxy).The impact of irradiation on the chemical composition of all adhesives under investigation was studied using three standard methods for chemical analysis: quadrupole...

  12. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.

    2017-02-07

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  13. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.; Sevilla, Galo T.; Velling, Seneca J.; Cordero, Marlon D.; Hussain, Muhammad Mustafa

    2017-01-01

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  14. The baseline pressure of intracranial pressure (ICP) sensors can be altered by electrostatic discharges.

    Science.gov (United States)

    Eide, Per K; Bakken, André

    2011-08-22

    The monitoring of intracranial pressure (ICP) has a crucial role in the surveillance of patients with brain injury. During long-term monitoring of ICP, we have seen spontaneous shifts in baseline pressure (ICP sensor zero point), which are of technical and not physiological origin. The aim of the present study was to explore whether or not baseline pressures of ICP sensors can be affected by electrostatics discharges (ESD's), when ESD's are delivered at clinically relevant magnitudes. We performed bench-testing of a set of commercial ICP sensors. In our experimental setup, the ICP sensor was placed in a container with 0.9% NaCl solution. A test person was charged 0.5-10 kV, and then delivered ESD's to the sensor by touching a metal rod that was located in the container. The continuous pressure signals were recorded continuously before/after the ESD's, and the pressure readings were stored digitally using a computerized system A total of 57 sensors were tested, including 25 Codman ICP sensors and 32 Raumedic sensors. When charging the test person in the range 0.5-10 kV, typically ESD's in the range 0.5-5 kV peak pulse were delivered to the ICP sensor. Alterations in baseline pressure ≥ 2 mmHg was seen in 24 of 25 (96%) Codman sensors and in 17 of 32 (53%) Raumedic sensors. Lasting changes in baseline pressure > 10 mmHg that in the clinical setting would affect patient management, were seen frequently for both sensor types. The changes in baseline pressure were either characterized by sudden shifts or gradual drifts in baseline pressure. The baseline pressures of commercial solid ICP sensors can be altered by ESD's at discharge magnitudes that are clinically relevant. Shifts in baseline pressure change the ICP levels visualised to the physician on the monitor screen, and thereby reveal wrong ICP values, which likely represent a severe risk to the patient.

  15. Design and Analysis of a New Tuning Fork Structure for Resonant Pressure Sensor

    Directory of Open Access Journals (Sweden)

    Xiaodong Sun

    2016-08-01

    Full Text Available This paper presents a micromachined resonant pressure sensor. The sensor is designed to optimize the sensitivity and reduce the cross-talk between the driving electrodes and sensing electrodes. The relationship between the sensitivity of the sensor and the main design parameters is analyzed both theoretically and numerically. The sensing and driving electrodes are optimized to get both high sensing capacitance and low cross-talk. This sensor is fabricated using a micromachining process based on a silicon-on-insulator (SOI wafer. An open-loop measurement system and a closed-loop self-oscillation system is employed to measure the characteristics of the sensor. The experiment result shows that the sensor has a pressure sensitivity of about 29 Hz/kPa, a nonlinearity of 0.02%FS, a hysteresis error of 0.05%FS, and a repeatability error of 0.01%FS. The temperature coefficient is less than 2 Hz/°C in the range of −40 to 80 °C and the short-term stability of the sensor is better than 0.005%FS.

  16. Silicon carbide transparent chips for compact atomic sensors

    Science.gov (United States)

    Huet, L.; Ammar, M.; Morvan, E.; Sarazin, N.; Pocholle, J.-P.; Reichel, J.; Guerlin, C.; Schwartz, S.

    2017-11-01

    Atom chips [1] are an efficient tool for trapping, cooling and manipulating cold atoms, which could open the way to a new generation of compact atomic sensors addressing space applications. This is in particular due to the fact that they can achieve strong magnetic field gradients near the chip surface, hence strong atomic confinement at moderate electrical power. However, this advantage usually comes at the price of reducing the optical access to the atoms, which are confined very close to the chip surface. We will report at the conference experimental investigations showing how these limits could be pushed farther by using an atom chip made of a gold microcircuit deposited on a single-crystal Silicon Carbide (SiC) substrate [2]. With a band gap energy value of about 3.2 eV at room temperature, the latter material is transparent at 780nm, potentially restoring quasi full optical access to the atoms. Moreover, it combines a very high electrical resistivity with a very high thermal conductivity, making it a good candidate for supporting wires with large currents without the need of any additional electrical insulation layer [3].

  17. Synthesis and characterization of porous silicon gas sensors

    Science.gov (United States)

    abbas, Roaa A.; Alwan, Alwan M.; Abdulhamied, Zainab T.

    2018-05-01

    In this work, photo-electrochemical etching process of n-type Silicon of resistivity(10 Ω.cm) and (100) orientation, using two illumination sources IR and violet wavelength in HF acid have been used to produce PSi gas detection device. The fabrication process was carried out at a fixed etching current density of 25mA/cm2 and at different etching time (5, 10, 15 and 20) min and (8, 16, 24, and 30) min. Two configurations of gas sensor configuration planer and sandwich have been made and investigated. The morphological properties have been studied using SEM,the FTIR measurement show that the (Si-Hx) and (Si-O-Si) absorption peak were increases with increasing etching time,and Photoluminescence properties of PSi layer show decrease in the peak of PL peak toward the violet shift. The gas detection process is made on the CO2 gas at different operating temperature and fixed gas concentration. In the planner structure, the gas sensing was measured through, the change in the resistance readout as a function to the exposure time, while for sandwich structure J-V characteristic have been made to determine the sensitivity.

  18. Research experiments on pressure-difference sensors with ferrofluid

    Energy Technology Data Exchange (ETDEWEB)

    Ruican, Hao, E-mail: haoruican@163.com [School of Mechanical Engineering, Beijing Polytechnic, Beijing 100176 (China); Huagang, Liu; Wen, Gong; Na, Zhang [School of Mechanical Engineering, Beijing Polytechnic, Beijing 100176 (China); Ruixiao, Hao [Civil and Architectural Engineering Institute of CCCC-FHEB Co., Ltd., Beijing 101102 (China)

    2016-10-15

    Ferrofluid has distinctive properties and can be applied in many industrial uses, especially in sensors. The principles of pressure-difference sensors with ferrofluid were illustrated and experiments were demonstrated. Four types of ferrofluids with different concentrations were selected for the experiments performed. Then, the parameters of ferrofluid, such as density and magnetization, were measured. The magnetization curves of the ferrofluid were sketched. Four U tubes with different diameters were designed and built. Experiments were conducted to analyze the impacts of tube diameter and ferrofluid concentration on the output voltage/pressure difference performance. According to the experiment results, the tube diameter has little effect on the sensor output voltage. With the concentration of ferrofluid increasing, the output voltage and sensitivity of the pressure-difference sensor increases. The measurable range of the sensor also increases with the increasing concentration of ferrofluid. The workable range and the sensitivity of the designed sensor were (−2000~+2000)Pa and 1.26 mV/Pa, respectively. - Highlights: • The principle of pressure difference sensor with ferrofluid was illustrated. • The parameters of ferrofluid, such as density and magnetization, were measured. The magnetization curves of the ferrofluid were sketched. • Four series of U tubes with different diameter were designed and manufactured. • The experiments were made to analyze the factors of the tube diameter and the concentration of ferrofluid on the output-input pressure difference. • The sensitivity of the pressure difference sensor with ferrofluid was studied and the corresponding conclusions were obtained.

  19. Research experiments on pressure-difference sensors with ferrofluid

    International Nuclear Information System (INIS)

    Ruican, Hao; Huagang, Liu; Wen, Gong; Na, Zhang; Ruixiao, Hao

    2016-01-01

    Ferrofluid has distinctive properties and can be applied in many industrial uses, especially in sensors. The principles of pressure-difference sensors with ferrofluid were illustrated and experiments were demonstrated. Four types of ferrofluids with different concentrations were selected for the experiments performed. Then, the parameters of ferrofluid, such as density and magnetization, were measured. The magnetization curves of the ferrofluid were sketched. Four U tubes with different diameters were designed and built. Experiments were conducted to analyze the impacts of tube diameter and ferrofluid concentration on the output voltage/pressure difference performance. According to the experiment results, the tube diameter has little effect on the sensor output voltage. With the concentration of ferrofluid increasing, the output voltage and sensitivity of the pressure-difference sensor increases. The measurable range of the sensor also increases with the increasing concentration of ferrofluid. The workable range and the sensitivity of the designed sensor were (−2000~+2000)Pa and 1.26 mV/Pa, respectively. - Highlights: • The principle of pressure difference sensor with ferrofluid was illustrated. • The parameters of ferrofluid, such as density and magnetization, were measured. The magnetization curves of the ferrofluid were sketched. • Four series of U tubes with different diameter were designed and manufactured. • The experiments were made to analyze the factors of the tube diameter and the concentration of ferrofluid on the output-input pressure difference. • The sensitivity of the pressure difference sensor with ferrofluid was studied and the corresponding conclusions were obtained.

  20. A film bulk acoustic resonator-based high-performance pressure sensor integrated with temperature control system

    International Nuclear Information System (INIS)

    Zhang, Mengying; Zhao, Zhan; Du, Lidong; Fang, Zhen

    2017-01-01

    This paper presented a high-performance pressure sensor based on a film bulk acoustic resonator (FBAR). The support film of the FBAR chip was made of silicon nitride and the part under the resonator area was etched to enhance the sensitivity and improve the linearity of the pressure sensor. A micro resistor temperature sensor and a micro resistor heater were integrated in the chip to monitor and control the operating temperature. The sensor chip was fabricated, and packaged in an oscillator circuit for differential pressure detection. When the detected pressure ranged from  −100 hPa to 600 hPa, the sensitivity of the improved FBAR pressure sensor was  −0.967 kHz hPa −1 , namely  −0.69 ppm hPa −1 , which was 19% higher than that of existing sensors with a complete support film. The nonlinearity of the improved sensor was less than  ±0.35%, while that of the existing sensor was  ±5%. To eliminate measurement errors from humidity, the temperature control system integrated in the sensor chip controlled the temperature of the resonator up to 75 °C, with accuracy of  ±0.015 °C and power of 20 mW. (paper)

  1. Investigation of the impact of mechanical stress on the properties of silicon strip sensors

    CERN Document Server

    Affolder, Tony; The ATLAS collaboration

    2017-01-01

    The new ATLAS tracker for phase II will be composed of silicon pixel and strip sensor modules. The strip sensor module consists of silicon sensors, boards and readout chips. Adhesives are used to connect the modular components thermally and mechanically. It was shown that the silicon sensor is exposed to mechanical stress, due to temperature difference between construction and operation. Mechanical stress can damage the sensor and can change the electrical properties. The thermal induced tensile stress near to the surface of a silicon sensor in a module was simulated and the results are compared to a cooled module. A four point bending setup was used to measure the maximum tensile stress of silicon detectors and to verify the piezoresistive effects on two recent development sensor types used in ATLAS (ATLAS07 and ATLAS12). Changes in the interstrip, bulk and bias resistance and capacitance as well as the coupling capacitance and the implant resistance were measured. The Leakage current was observed to decreas...

  2. Fiber optic pressure sensors for nuclear power plants

    Energy Technology Data Exchange (ETDEWEB)

    Hashemian, H.M.; Black, C.L. [Analysis and Measurement Services Corp., Knoxville, TN (United States)

    1995-04-01

    In the last few years, the nuclear industry has experienced some problems with the performance of pressure transmitters and has been interested in new sensors based on new technologies. Fiber optic pressure sensors offer the potential to improve on or overcome some of the limitations of existing pressure sensors. Up to now, research has been motivated towards development and refinement of fiber optic sensing technology. In most applications, reliability studies and failure mode analyses remain to be exhaustively conducted. Fiber optic sensors have currently penetrated certain cutting edge markets where they possess necessary inherent advantages over other existing technologies. In these markets (e.g. biomedical, aerospace, automotive, and petrochemical), fiber optic sensors are able to perform measurements for which no alternate sensor previously existed. Fiber optic sensing technology has not yet been fully adopted into the mainstream sensing market. This may be due to not only the current premium price of fiber optic sensors, but also the lack of characterization of their possible performance disadvantages. In other words, in conservative industries, the known disadvantages of conventional sensors are sometimes preferable to unknown or not fully characterized (but potentially fewer and less critical) disadvantages of fiber optic sensors. A six-month feasibility study has been initiated under the auspices of the US Nuclear Regulatory Commission (NRC) to assess the performance and reliability of existing fiber optic pressure sensors for use in nuclear power plants. This assessment will include establishment of the state of the art in fiber optic pressure sensing, characterization of the reliability of fiber optic pressure sensors, and determination of the strengths and limitations of these sensors for nuclear safety-related services.

  3. Fiber optic pressure sensors for nuclear power plants

    International Nuclear Information System (INIS)

    Hashemian, H.M.; Black, C.L.

    1995-01-01

    In the last few years, the nuclear industry has experienced some problems with the performance of pressure transmitters and has been interested in new sensors based on new technologies. Fiber optic pressure sensors offer the potential to improve on or overcome some of the limitations of existing pressure sensors. Up to now, research has been motivated towards development and refinement of fiber optic sensing technology. In most applications, reliability studies and failure mode analyses remain to be exhaustively conducted. Fiber optic sensors have currently penetrated certain cutting edge markets where they possess necessary inherent advantages over other existing technologies. In these markets (e.g. biomedical, aerospace, automotive, and petrochemical), fiber optic sensors are able to perform measurements for which no alternate sensor previously existed. Fiber optic sensing technology has not yet been fully adopted into the mainstream sensing market. This may be due to not only the current premium price of fiber optic sensors, but also the lack of characterization of their possible performance disadvantages. In other words, in conservative industries, the known disadvantages of conventional sensors are sometimes preferable to unknown or not fully characterized (but potentially fewer and less critical) disadvantages of fiber optic sensors. A six-month feasibility study has been initiated under the auspices of the US Nuclear Regulatory Commission (NRC) to assess the performance and reliability of existing fiber optic pressure sensors for use in nuclear power plants. This assessment will include establishment of the state of the art in fiber optic pressure sensing, characterization of the reliability of fiber optic pressure sensors, and determination of the strengths and limitations of these sensors for nuclear safety-related services

  4. Method and Apparatus for Characterizing Pressure Sensors using Modulated Light Beam Pressure

    Science.gov (United States)

    Youngquist, Robert C. (Inventor)

    2003-01-01

    Embodiments of apparatuses and methods are provided that use light sources instead of sound sources for characterizing and calibrating sensors for measuring small pressures to mitigate many of the problems with using sound sources. In one embodiment an apparatus has a light source for directing a beam of light on a sensing surface of a pressure sensor for exerting a force on the sensing surface. The pressure sensor generates an electrical signal indicative of the force exerted on the sensing surface. A modulator modulates the beam of light. A signal processor is electrically coupled to the pressure sensor for receiving the electrical signal.

  5. Package-friendly piezoresistive pressure sensors with on-chip integrated packaging-stress-suppressed suspension (PS3) technology

    International Nuclear Information System (INIS)

    Wang, Jiachou; Li, Xinxin

    2013-01-01

    An on-chip integrated packaging-stress-suppressed suspension (PS 3 ) technology for a packaging-stress-free pressure sensor is proposed and developed. With a MIS (microholes interetch and sealing) micromachining process implemented only from the front-side of a single-side polished (1 1 1) silicon wafer, a compact cantilever-shaped PS 3 is on-chip integrated surrounding a piezoresistive pressure-sensing structure to provide a packaging-process/substrate-friendly method for low-cost but high-performance sensor applications. With the MIS process, the chip size of the PS 3 -enclosed pressure sensor is as small as 0.8 mm × 0.8 mm. Compared with a normal pressure sensor without PS 3 (but with an identical pressure-sensing structure), the proposed pressure sensor has the same sensitivity of 0.046 mV kPa −1 (3.3 V) −1 . However, without using the thermal compensation technique, a temperature coefficient of offset of only 0.016% °C −1 FS is noted for the sensor with PS 3 , which is about 15 times better than that for the sensor without PS 3 . Featuring effective isolation and elimination of the influence from packaging stress, the PS 3 technique is promising to be widely used for packaging-friendly mechanical sensors. (paper)

  6. Flexible pressure sensors for smart protective clothing against impact loading

    International Nuclear Information System (INIS)

    Wang, Fei; Zhu, Bo; Shu, Lin; Tao, Xiaoming

    2014-01-01

    The development of smart protective clothing will facilitate the quick detection of injuries from contact sports, traffic collisions and other accidents. To obtain real-time information like spatial and temporal pressure distributions on the clothing, flexible pressure sensor arrays are required. Based on a resistive fabric strain sensor we demonstrate all flexible, resistive pressure sensors with a large workable pressure range (0–8 MPa), a high sensitivity (1 MPa −1 ) and an excellent repeatability (lowest non-repeatability ±2.4% from 0.8 to 8 MPa) that can be inexpensively fabricated using fabric strain sensors and biocompatible polydimethylsiloxane (PDMS). The pressure sensitivity is tunable by using elastomers with different elasticities or by the pre-strain control of fabric strain sensors. Finite element simulation further confirms the sensor design. The simple structure, large workable pressure range, high sensitivity, high flexibility, facile fabrication and low cost of these pressure sensors make them promising candidates for smart protective clothing against impact loading. (paper)

  7. Acoustic Detection Of Loose Particles In Pressure Sensors

    Science.gov (United States)

    Kwok, Lloyd C.

    1995-01-01

    Particle-impact-noise-detector (PIND) apparatus used in conjunction with computer program analyzing output of apparatus to detect extraneous particles trapped in pressure sensors. PIND tester essentially shaker equipped with microphone measuring noise in pressure sensor or other object being shaken. Shaker applies controlled vibration. Output of microphone recorded and expressed in terms of voltage, yielding history of noise subsequently processed by computer program. Data taken at sampling rate sufficiently high to enable identification of all impacts of particles on sensor diaphragm and on inner surfaces of sensor cavities.

  8. Fiber optic pressure sensors in skin-friction measurements

    Science.gov (United States)

    Kidwell, R.

    1985-01-01

    Fiber optic lever pressure sensors intended for use in a low speed wind tunnel environment were designed, constructed and tested for the measurement of normal and shear displacements associated with the pressures acting on a flat aluminum plate. On-site tests performed along with several static and dynamic measurements made have established that, with proper modifications and improvements, the design concepts are acceptable and can be utilized for their intended use. Several elastomers were investigated for use in sensors and for their incorporation into these sensors. Design and assembly techniques for probes and complete sensors were developed.

  9. A scalable pressure sensor based on an electrothermally and electrostatically operated resonator

    KAUST Repository

    Hajjaj, Amal Z.; Alcheikh, Nouha; Hafiz, Md Abdullah Al; Ilyas, Saad; Younis, Mohammad I.

    2017-01-01

    We present a pressure sensor based on the convective cooling of the air surrounding an electrothermally heated resonant bridge. Unlike conventional pressure sensors that rely on diaphragm deformation in response to pressure, the sensor does

  10. FISH & CHIPS: Four Electrode Conductivity / Salinity Sensor on a Silicon Multi-sensor chip for Fisheries Research

    DEFF Research Database (Denmark)

    Hyldgård, Anders; Olafsdottir, Iris; Olesen, M.

    2005-01-01

    The design and fabrication of a single chip silicon salinity, temperature, pressure and light multisensor is presented. The behavior 2- and 4-electrode conductivity microsensors are described and methods for precise determination of water conductivity are given......The design and fabrication of a single chip silicon salinity, temperature, pressure and light multisensor is presented. The behavior 2- and 4-electrode conductivity microsensors are described and methods for precise determination of water conductivity are given...

  11. Batch-processed carbon nanotube wall as pressure and flow sensor

    International Nuclear Information System (INIS)

    Choi, Jungwook; Kim, Jongbaeg

    2010-01-01

    A pressure and flow sensor based on the electrothermal-thermistor effect of a batch-processed carbon nanotube wall (CNT wall) is presented. The negative temperature coefficient of resistance (TCR) of CNTs and the temperature dependent tunneling rate through the CNT/silicon junction enable vacuum pressure and flow velocity sensing because the heat transfer rate between CNTs and the surrounding gas molecules differs depending on pressure and flow rate. The CNT walls are synthesized by thermal chemical vapor deposition (CVD) on an array of microelectrodes fabricated on a silicon-on-insulator (SOI) wafer. The CNTs are self-assembled between the microelectrodes and substrate across the thickness of a buried oxide layer during the synthesis process, and the simple batch fabrication results in high throughput and yield. A wide pressure range, down to 3 x 10 -3 from 10 5 Pa, and a nitrogen flow velocity range between 1 and 52.4 mm s -1 , are sensed. Further experimental characterizations of the bias voltage dependent response of the sensor as a vacuum pressure gauge are presented.

  12. Low Cost Plastic Optical Fiber Pressure Sensor Embedded in Mattress for Vital Signal Monitoring.

    Science.gov (United States)

    Sartiano, Demetrio; Sales, Salvador

    2017-12-13

    The aim of this paper is to report the design of a low-cost plastic optical fiber (POF) pressure sensor, embedded in a mattress. We report the design of a multipoint sensor, a cheap alternative to the most common fiber sensors. The sensor is implemented using Arduino board, standard LEDs for optical communication in POF (λ = 645 nm) and a silicon light sensor. The Super ESKA ® plastic fibers were used to implement the fiber intensity sensor, arranged in a 4 × 4 matrix. During the breathing cycles, the force transmitted from the lungs to the thorax is in the order of tens of Newtons, and the respiration rate is of one breath every 2-5 s (0.2-0.5 Hz). The sensor has a resolution of force applied on a single point of 2.2-4.5%/N on the normalized voltage output, and a bandwidth of 10 Hz, it is then suitable to monitor the respiration movements. Another issue to be addressed is the presence of hysteresis over load cycles. The sensor was loaded cyclically to estimate the drift of the system, and the hysteresis was found to be negligible.

  13. Low Cost Plastic Optical Fiber Pressure Sensor Embedded in Mattress for Vital Signal Monitoring

    Directory of Open Access Journals (Sweden)

    Demetrio Sartiano

    2017-12-01

    Full Text Available The aim of this paper is to report the design of a low-cost plastic optical fiber (POF pressure sensor, embedded in a mattress. We report the design of a multipoint sensor, a cheap alternative to the most common fiber sensors. The sensor is implemented using Arduino board, standard LEDs for optical communication in POF (λ = 645 nm and a silicon light sensor. The Super ESKA® plastic fibers were used to implement the fiber intensity sensor, arranged in a 4 × 4 matrix. During the breathing cycles, the force transmitted from the lungs to the thorax is in the order of tens of Newtons, and the respiration rate is of one breath every 2–5 s (0.2–0.5 Hz. The sensor has a resolution of force applied on a single point of 2.2–4.5%/N on the normalized voltage output, and a bandwidth of 10 Hz, it is then suitable to monitor the respiration movements. Another issue to be addressed is the presence of hysteresis over load cycles. The sensor was loaded cyclically to estimate the drift of the system, and the hysteresis was found to be negligible.

  14. Thin film devices used as oxygen partial pressure sensors

    Science.gov (United States)

    Canady, K. S.; Wortman, J. J.

    1970-01-01

    Electrical conductivity of zinc oxide films to be used in an oxygen partial pressure sensor is measured as a function of temperature, oxygen partial pressure, and other atmospheric constituents. Time response following partial pressure changes is studied as a function of temperature and environmental changes.

  15. A fax-machine amorphous silicon sensor for X-ray detection

    Energy Technology Data Exchange (ETDEWEB)

    Alberdi, J. [Association EURATOM/CIEMAT, Madrid (Spain); Barcala, J.M. [Association EURATOM/CIEMAT, Madrid (Spain); Chvatchkine, V. [Association EURATOM/CIEMAT, Madrid (Spain); Ioudine, I. [Association EURATOM/CIEMAT, Madrid (Spain); Molinero, A. [Association EURATOM/CIEMAT, Madrid (Spain); Navarrete, J.J. [Association EURATOM/CIEMAT, Madrid (Spain); Yuste, C. [Association EURATOM/CIEMAT, Madrid (Spain)

    1996-10-01

    Amorphous silicon detectors have been used, basically, as solar cells for energetics applications. As light detectors, linear sensors are used in fax and photocopier machines because they can be built with a large size, low price and have a high radiation hardness. Due to these performances, amorphous silicon detectors have been used as radiation detectors, and, presently, some groups are developing matrix amorphous silicon detectors with built-in electronics for medical X-ray applications. Our group has been working on the design and development of an X-ray image system based on a commercial fax linear amorphous silicon detector. The sensor scans the selected area and detects light produced by the X-ray in a scintillator placed on the sensor. Image-processing software produces a final image with better resolution and definition. (orig.).

  16. Quality assurance of double-sided silicon microstrip sensors for the silicon tracking system in the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Larionov, Pavel [Goethe Universitaet, Frankfurt (Germany); Collaboration: CBM-Collaboration

    2015-07-01

    The Silicon Tracking System (STS) is the core tracking detector of the CBM experiment at FAIR. The system's task is to reconstruct the trajectories of the charged particles produced in the beam-target interactions, provide their momentum determination, and enable the detection of decay topologies. The STS will comprise 1220 double-sided silicon microstrip sensors. After production each sensor will go through a number of Quality Assurance procedures to verify their validity for performance in the STS and also to confirm the manufacturer's data. In this talk, results of the quality assurance procedures that are being applied to the latest STS prototype sensors, including detailed tests of the quality of each single strip, long-term stability and preparations for volume tests during series production, are presented.

  17. Low-Power Silicon-based Thermal Sensors and Actuators for Chemical Applications

    NARCIS (Netherlands)

    Vereshchagina, E.

    2011-01-01

    In the Hot Silicon project low and ultra-low-power Si-based hot surface devices have been developed, i.e. thermal sensors and actuators, for application in catalytic gas micro sensors, micro- and nano- calorimeters. This work include several scientific and technological aspects: • Design and

  18. Testbeam studies of silicon microstrip sensor architectures modified to facilitate detector module mass production

    CERN Document Server

    Poley, Anne-luise; The ATLAS collaboration

    2016-01-01

    For the High Luminosity Upgrade of the LHC, the Inner Detector of the ATLAS detector will be replaced by an all-silicon tracker, consisting of pixel and strip sensor detector modules. Silicon strip sensors are being developed to meet both the tracking requirements in a high particle density environment and constraints imposed by the construction process. Several thousand wire bonds per module, connecting sensor strips and readout channels, need to be produced with high reliability and speed, requiring wire bond pads of sufficient size on each sensor strip. These sensor bond pads change the local sensor architecture and the resulting electric field and thus alter the sensor performance. These sensor regions with bond pads, which account for up to 10 % of a silicon strip sensor, were studied using both an electron beam at DESY and a micro-focused X-ray beam at the Diamond Light Source. This contribution presents measurements of the effective strip width in sensor regions where the structure of standard parallel...

  19. P-Type Silicon Strip Sensors for the Future CMS Tracker

    CERN Document Server

    The Tracker Group of the CMS Collaboration

    2016-01-01

    The upgrade to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable silicon sensor materials and strip designs for the future outer tracker at CMS. Based on these results, the collaboration has chosen to use n-in-p type strip and macro-pixel sensors and focus further investigations on the optimization of that sensor type. This paper describes the main measurement results and conclusions that motivated this decision.

  20. Development and applications of monocrystalline silicon radiation sensors fabricated at Comision Nacional de Energia Atomica (CNEA)

    International Nuclear Information System (INIS)

    Bolzi, C; Bruno, C; Duran, J; Godfrin, E; Martinez Bogado, M; Pla, J; Tamasi, M

    2005-01-01

    The development of silicon photovoltaic sensors at CNEA has begun in 1998.These sensors, fabricated in the Photovoltaic Laboratory of the Solar Energy Group at Constituyentes Atomic Center, have been used to build low cost radiometers as well as solar angular position sensors on board of artificial satellites.The design, fabrication and calibration of these sensors have been made in different prototypes in order to analyze its performance and to evaluate its limitations.Nowadays, several commercial prototypes have been distributed in different laboratories of our country in order to evaluate them in real work conditions.Particularly, the first experiment of argentine solar cells on space performed on board of SAC-A satellite, included the fabrication of position sensors of this satellite as part of the alignment system of the solar array respect to the sun.In this article, the state of the art of monocrystalline silicon photovoltaic sensors fabricated at CNEA for terrestrial and space applications is presented

  1. Chronically implanted pressure sensors: challenges and state of the field.

    Science.gov (United States)

    Yu, Lawrence; Kim, Brian J; Meng, Ellis

    2014-10-31

    Several conditions and diseases are linked to the elevation or depression of internal pressures from a healthy, normal range, motivating the need for chronic implantable pressure sensors. A simple implantable pressure transduction system consists of a pressure-sensing element with a method to transmit the data to an external unit. The biological environment presents a host of engineering issues that must be considered for long term monitoring. Therefore, the design of such systems must carefully consider interactions between the implanted system and the body, including biocompatibility, surgical placement, and patient comfort. Here we review research developments on implantable sensors for chronic pressure monitoring within the body, focusing on general design requirements for implantable pressure sensors as well as specifications for different medical applications. We also discuss recent efforts to address biocompatibility, efficient telemetry, and drift management, and explore emerging trends.

  2. Recent Improvement of Medical Optical Fibre Pressure and Temperature Sensors.

    Science.gov (United States)

    Poeggel, Sven; Duraibabu, Dineshbabu; Kalli, Kyriacos; Leen, Gabriel; Dooly, Gerard; Lewis, Elfed; Kelly, Jimmy; Munroe, Maria

    2015-07-13

    This investigation describes a detailed analysis of the fabrication and testing of optical fibre pressure and temperature sensors (OFPTS). The optical sensor of this research is based on an extrinsic Fabry-Perot interferometer (EFPI) with integrated fibre Bragg grating (FBG) for simultaneous pressure and temperature measurements. The sensor is fabricated exclusively in glass and with a small diameter of 0.2 mm, making it suitable for volume-restricted bio-medical applications. Diaphragm shrinking techniques based on polishing, hydrofluoric (HF) acid and femtosecond (FS) laser micro-machining are described and analysed. The presented sensors were examined carefully and demonstrated a pressure sensitivity in the range of sp = 2-10 nm/kPa and a resolution of better than ΔP = 10 Pa protect (0.1 cm H2O). A static pressure test in 38 cm H2O shows no drift of the sensor in a six-day period. Additionally, a dynamic pressure analysis demonstrated that the OFPTS never exceeded a drift of more than 130 Pa (1.3 cm H2O) in a 12-h measurement, carried out in a cardiovascular simulator. The temperature sensitivity is given by k = 10.7 pm/K, which results in a temperature resolution of better than ΔT = 0.1 K. Since the temperature sensing element is placed close to the pressure sensing element, the pressure sensor is insensitive to temperature changes.

  3. Recent Improvement of Medical Optical Fibre Pressure and Temperature Sensors

    Directory of Open Access Journals (Sweden)

    Sven Poeggel

    2015-07-01

    Full Text Available This investigation describes a detailed analysis of the fabrication and testing of optical fibre pressure and temperature sensors (OFPTS. The optical sensor of this research is based on an extrinsic Fabry–Perot interferometer (EFPI with integrated fibre Bragg grating (FBG for simultaneous pressure and temperature measurements. The sensor is fabricated exclusively in glass and with a small diameter of 0.2 mm, making it suitable for volume-restricted bio-medical applications. Diaphragm shrinking techniques based on polishing, hydrofluoric (HF acid and femtosecond (FS laser micro-machining are described and analysed. The presented sensors were examined carefully and demonstrated a pressure sensitivity in the range of \\(s_p\\ = 2–10 \\(\\frac{\\text{nm}}{\\text{kPa}}\\ and a resolution of better than \\(\\Delta P\\ = 10 Pa protect (0.1 cm H\\(_2\\O. A static pressure test in 38 cmH\\(_2\\O shows no drift of the sensor in a six-day period. Additionally, a dynamic pressure analysis demonstrated that the OFPTS never exceeded a drift of more than 130 Pa (1.3 cm H\\(_2\\O in a 12-h measurement, carried out in a cardiovascular simulator. The temperature sensitivity is given by \\(k=10.7\\ \\(\\frac{\\text{pm}}{\\text{K}}\\, which results in a temperature resolution of better than \\(\\Delta T\\ = 0.1 K. Since the temperature sensing element is placed close to the pressure sensing element, the pressure sensor is insensitive to temperature changes.

  4. Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

    CERN Document Server

    Carabe, J; Ferrando, A; Fuentes, J; Gandia, J J; Josa-Mutuberria, I; Molinero, A; Oller, J C; Arce, P; Calvo, E; Figueroa, C F; García, N; Matorras, F; Rodrigo, T; Vila, I; Virto, A L; Fenyvesi, A; Molnár, J; Sohler, D

    2000-01-01

    Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with /sup 60/Co photons (up to 100 kGy) and fast neutrons (up to 10/sup 15 / cm/sup -2/), and the subsequent change in their performance has been measured. (13 refs).

  5. Development and testing of bio-inspired microelectromechanical pressure sensor arrays for increased situational awareness for marine vehicles

    International Nuclear Information System (INIS)

    Dusek, J; Triantafyllou, M S; Kottapalli, A G P; Asadnia, M; Miao, J; Woo, M E; Lang, J H

    2013-01-01

    The lateral line found on most species of fish is a sensory organ without analog in humans. Using sensory feedback from the lateral line, fish are able to track prey, school, avoid obstacles, and detect vortical flow structures. Composed of both a superficial component, and a component contained within canals beneath the fish’s skin, the lateral line acts in a similar fashion to an array of differential pressure sensors. In an effort to enhance the situational and environmental awareness of marine vehicles, lateral-line-inspired pressure sensor arrays were developed to mimic the enhanced sensory capabilities observed in fish. Three flexible and waterproof pressure sensor arrays were fabricated for use as a surface-mounted ‘smart skin’ on marine vehicles. Two of the sensor arrays were based around the use of commercially available piezoresistive sensor dies, with innovative packaging schemes to allow for flexibility and underwater operation. The sensor arrays employed liquid crystal polymer and flexible printed circuit board substrates with metallic circuits and silicone encapsulation. The third sensor array employed a novel nanocomposite material set that allowed for the fabrication of a completely flexible sensor array. All three sensors were surface mounted on the curved hull of an autonomous kayak vehicle, and tested in both pool and reservoir environments. Results demonstrated that all three sensors were operational while deployed on the autonomous vehicle, and provided an accurate means for monitoring the vehicle dynamics. (paper)

  6. Process Optimization for Monolithic Integration of Piezoresistive Pressure Sensor and MOSFET Amplifier with SOI Approach

    International Nuclear Information System (INIS)

    Kumar, V Vinoth; Dasgupta, A; Bhat, K N; KNatarajan

    2006-01-01

    In this paper we present the design and process optimization for fabricating piezoresitive pressure sensor and MOSFET Differential Amplifier simultaneously on the same chip. Silicon On Insulator approach has been used for realizing the membrane as well as the electronics on the same chip. The amplifier circuit has been configured in the common source connection and it has been designed with PSPICE simulation to achieve a voltage gain of about 5. In the initial set of experiments the Pressure sensor and the amplifier were fabricated on separate chips to optimize the process steps and tested in the hybrid mode. In the next set of experiments, SOI wafer having the SOI layer thickness of about 11 microns was used for realizing the membrane by anisotropic etching from the backside. The piezo-resistive pressure sensor was realized on this membrane by connecting the polysilicon resistors in the form of a Wheatstone bridge. The MOSFET source follower amplifier was also fabricated on the same SOI wafer by tailoring the process steps to suit the requirement of simultaneous fabrication of piezoresistors and the amplifier for achieving MOSFET Integrated Pressure Sensor. Reproducible results have been achieved on the SOI wafers, with the process steps developed in the laboratory. Sensitivity of 270 mV /Bar/10V, with the on chip amplifier gain of 4.5, has been achieved with this process

  7. Pressure sensor to determine spatial pressure distributions on boundary layer flows

    Science.gov (United States)

    Sciammarella, Cesar A.; Piroozan, Parham; Corke, Thomas C.

    1997-03-01

    The determination of pressures along the surface of a wind tunnel proves difficult with methods that must introduce devices into the flow stream. This paper presents a sensor that is part of the wall. A special interferometric reflection moire technique is developed and used to produce signals that measures pressure both in static and dynamic settings. The sensor developed is an intelligent sensor that combines optics and electronics to analyze the pressure patterns. The sensor provides the input to a control system that is capable of modifying the shape of the wall and preserve the stability of the flow.

  8. Self-Correcting Electronically-Scanned Pressure Sensor

    Science.gov (United States)

    Gross, C.; Basta, T.

    1982-01-01

    High-data-rate sensor automatically corrects for temperature variations. Multichannel, self-correcting pressure sensor can be used in wind tunnels, aircraft, process controllers and automobiles. Offers data rates approaching 100,000 measurements per second with inaccuracies due to temperature shifts held below 0.25 percent (nominal) of full scale over a temperature span of 55 degrees C.

  9. Calibration Of Partial-Pressure-Of-Oxygen Sensors

    Science.gov (United States)

    Yount, David W.; Heronimus, Kevin

    1995-01-01

    Report and analysis of, and discussion of improvements in, procedure for calibrating partial-pressure-of-oxygen sensors to satisfy Spacelab calibration requirements released. Sensors exhibit fast drift, which results in short calibration period not suitable for Spacelab. By assessing complete process of determining total drift range available, calibration procedure modified to eliminate errors and still satisfy requirements without compromising integrity of system.

  10. High-Performance Pressure Sensor for Monitoring Mechanical Vibration and Air Pressure

    Directory of Open Access Journals (Sweden)

    Yancheng Meng

    2018-05-01

    Full Text Available To realize the practical applications of flexible pressure sensors, the high performance (sensitivity and response time as well as more functionalities are highly desired. In this work, we fabricated a piezoresistive pressure sensor based on the micro-structured composites films of multi-walled carbon nanotubes (MWCNTs and poly (dimethylsiloxane (PDMS. In addition, we establish efficient strategies to improve key performance of our pressure sensor. Its sensitivity is improved up to 474.13 kPa−1 by minimizing pressure independent resistance of sensor, and response time is shorten as small as 2 μs by enhancing the elastic modulus of polymer elastomer. Benefiting from the high performance, the functionalities of sensors are successfully extended to the accurate detection of high frequency mechanical vibration (~300 Hz and large range of air pressure (6–101 kPa, both of which are not achieved before.

  11. Optical fiber Bragg grating-instrumented silicone liner for interface pressure measurement within prosthetic sockets of lower-limb amputees

    Science.gov (United States)

    Al-Fakih, Ebrahim; Arifin, Nooranida; Pirouzi, Gholamhossein; Mahamd Adikan, Faisal Rafiq; Shasmin, Hanie Nadia; Abu Osman, Noor Azuan

    2017-08-01

    This paper presents a fiber Bragg grating (FBG)-instrumented prosthetic silicone liner that provides cushioning for the residual limb and can successfully measure interface pressures inside prosthetic sockets of lower-limb amputees in a simple and practical means of sensing. The liner is made of two silicone layers between which 12 FBG sensors were embedded at locations of clinical interest. The sensors were then calibrated using a custom calibration platform that mimics a real-life situation. Afterward, a custom gait simulating machine was built to test the liner performance during an amputee's simulated gait. To validate the findings, the results were compared to those obtained by the commonly used F-socket mats. As the statistical findings reveal, both pressure mapping methods measured the interface pressure in a consistent way, with no significant difference (P-values ≥0.05). This pressure mapping technique in the form of a prosthetic liner will allow prosthetics professionals to quickly and accurately create an overall picture of the interface pressure distribution inside sockets in research and clinical settings, thereby improving the socket fit and amputee's satisfaction.

  12. Optical fiber pressure sensor based on fiber Bragg grating

    Science.gov (United States)

    Song, Dongcao

    In oil field, it is important to measure the high pressure and temperature for down-hole oil exploration and well-logging, the available traditional electronic sensor is challenged due to the harsh, flammable environment. Recently, applications based on fiber Bragg grating (FBG) sensor in the oil industry have become a popular research because of its distinguishing advantages such as electrically passive operation, immunity to electromagnetic interference, high resolution, insensitivity to optical power fluctuation etc. This thesis is divided into two main sections. In the first section, the design of high pressure sensor based on FBG is described. Several sensing elements based on FBG for high pressure measurements have been proposed, for example bulk-modulus or free elastic modulus. But the structure of bulk-modulus and free elastic modulus is relatively complex and not easy to fabricate. In addition, the pressure sensitivity is not high and the repeatability of the structure has not been investigated. In this thesis, a novel host material of carbon fiber laminated composite (CFLC) for high pressure sensing is proposed. The mechanical characteristics including principal moduli in three directions and the shape repeatability are investigated. Because of it's Young's modulus in one direction and anisotropic characteristics, the pressure sensor made by CFLC has excellent sensitivity. This said structure can be used in very high pressure measurement due to carbon fiber composite's excellent shape repetition even under high pressure. The experimental results show high pressure sensitivity of 0.101nm/MPa and high pressure measurement up to 70MPa. A pressure sensor based on CFLC and FBG with temperature compensation has been designed. In the second section, the design of low pressure sensor based on FBG is demonstrated. Due to the trade off between measurement range and sensitivity, a sensor for lower pressure range needs more sensitivity. A novel material of carbon

  13. Design, simulation and analysis of piezoresistive MEMS pressure sensor for fast reactor applications

    International Nuclear Information System (INIS)

    Patankar, Mahesh Kumar; Murali, N.; Satya Murty, S.A.V.; Kalyana Rao, K.; Sridhar, S.

    2013-01-01

    To exploit the extraordinary benefits of MEMS technology in fast reactor domain, a piezoresistive MEMS pressure sensor was designed, simulated and analyzed using Intellisuite Software to measure the RCB air pressure in 0 - 1.25 bar (a) range. For sensing the pressure, a thin square silicon diaphragm of size of 800 x 800 μm 2 with thickness of 20 μm was optimized using FEM analysis and to transfer the mechanical stress, induce in the diaphragm due to pressure, into electrical output voltage signal, a set of piezoresistors were arranged on top side of the diaphragm in full active wheatstone bridge configuration for obtaining the higher sensitivity. The simulation results were compared with the analytical results which were found in line of expectations and electrical sensitivity was obtained at 15 mV/V.bar. (author)

  14. Ultrafast Dynamic Pressure Sensors Based on Graphene Hybrid Structure.

    Science.gov (United States)

    Liu, Shanbiao; Wu, Xing; Zhang, Dongdong; Guo, Congwei; Wang, Peng; Hu, Weida; Li, Xinming; Zhou, Xiaofeng; Xu, Hejun; Luo, Chen; Zhang, Jian; Chu, Junhao

    2017-07-19

    Mechanical flexible electronic skin has been focused on sensing various physical parameters, such as pressure and temperature. The studies of material design and array-accessible devices are the building blocks of strain sensors for subtle pressure sensing. Here, we report a new and facile preparation of a graphene hybrid structure with an ultrafast dynamic pressure response. Graphene oxide nanosheets are used as a surfactant to prevent graphene restacking in aqueous solution. This graphene hybrid structure exhibits a frequency-independent pressure resistive sensing property. Exceeding natural skin, such pressure sensors, can provide transient responses from static up to 10 000 Hz dynamic frequencies. Integrated by the controlling system, the array-accessible sensors can manipulate a robot arm and self-rectify the temperature of a heating blanket. This may pave a path toward the future application of graphene-based wearable electronics.

  15. Carbon nanotube based pressure sensor for flexible electronics

    International Nuclear Information System (INIS)

    So, Hye-Mi; Sim, Jin Woo; Kwon, Jinhyeong; Yun, Jongju; Baik, Seunghyun; Chang, Won Seok

    2013-01-01

    Highlights: • The electromechanical change of vertically aligned carbon nanotubes. • Fabrication of CNT field-effect transistor on flexible substrate. • CNT based FET integrated active pressure sensor. • The integrated device yields an increase in the source-drain current under pressure. - Abstract: A pressure sensor was developed based on an arrangement of vertically aligned carbon nanotubes (VACNTs) supported by a polydimethylsiloxane (PDMS) matrix. The VACNTs embedded in the PDMS matrix were structurally flexible and provided repeated sensing operation due to the high elasticities of both the polymer and the carbon nanotubes (CNTs). The conductance increased in the presence of a loading pressure, which compressed the material and induced contact between neighboring CNTs, thereby producing a dense current path and better CNT/metal contacts. To achieve flexible functional electronics, VACNTs based pressure sensor was integrated with field-effect transistor, which is fabricated using sprayed semiconducting carbon nanotubes on plastic substrate

  16. Carbon nanotube based pressure sensor for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    So, Hye-Mi [Department of Nano Mechanics, Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Daejeon 305-343 (Korea, Republic of); Sim, Jin Woo [Advanced Nano Technology Ltd., Seoul 132-710 (Korea, Republic of); Kwon, Jinhyeong [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Yun, Jongju; Baik, Seunghyun [SKKU Advanced Institute of Nanotechnology (SAINT), Department of Energy Science and School of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Chang, Won Seok, E-mail: paul@kimm.re.kr [Department of Nano Mechanics, Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Daejeon 305-343 (Korea, Republic of)

    2013-12-15

    Highlights: • The electromechanical change of vertically aligned carbon nanotubes. • Fabrication of CNT field-effect transistor on flexible substrate. • CNT based FET integrated active pressure sensor. • The integrated device yields an increase in the source-drain current under pressure. - Abstract: A pressure sensor was developed based on an arrangement of vertically aligned carbon nanotubes (VACNTs) supported by a polydimethylsiloxane (PDMS) matrix. The VACNTs embedded in the PDMS matrix were structurally flexible and provided repeated sensing operation due to the high elasticities of both the polymer and the carbon nanotubes (CNTs). The conductance increased in the presence of a loading pressure, which compressed the material and induced contact between neighboring CNTs, thereby producing a dense current path and better CNT/metal contacts. To achieve flexible functional electronics, VACNTs based pressure sensor was integrated with field-effect transistor, which is fabricated using sprayed semiconducting carbon nanotubes on plastic substrate.

  17. Pressure-Application Device for Testing Pressure Sensors

    Science.gov (United States)

    2002-01-01

    A portable pressure-application device has been designed and built for use in testing and calibrating piezoelectric pressure transducers in the field. The device generates pressure pulses of known amplitude. A pressure pulse (in contradistinction to a steady pressure) is needed because in the presence of a steady pressure, the electrical output of a piezoelectric pressure transducer decays rapidly with time. The device includes a stainless- steel compressed-air-storage cylinder of 500 cu cm volume. A manual hand pump with check valves and a pressure gauge are located at one end of the cylinder. A three-way solenoid valve that controls the release of pressurized air is located at the other end of the cylinder. Power for the device is provided by a 3.7-V cordless-telephone battery. The valve is controlled by means of a pushbutton switch, which activates a 5 V to +/-15 V DC-to-DC converter that powers the solenoid. The outlet of the solenoid valve is connected to the pressure transducer to be tested. Before the solenoid is energized, the transducer to be tested is at atmospheric pressure. When the solenoid is actuated by the push button, pressurized air from inside the cylinder is applied to the transducer. Once the pushbutton is released, the cylinder pressure is removed from the transducer and the pressurized air applied to the transducer is vented, bringing the transducer back to atmospheric pressure. Before this device was used for actual calibration, its accuracy was checked with a NIST (National Institute of Standards and Technology) traceable calibrator and commercially calibrated pressure transducers. This work was done by Wanda Solano of Stennis Space Center and Greg Richardson of Lockheed Martin Corp.

  18. Utility of silicone filtering for diffusive model CO2 sensors in field experiments

    Directory of Open Access Journals (Sweden)

    Shinjiro Ohkubo

    2013-05-01

    Full Text Available Installing a diffusive model CO2 sensor in the soil is a direct and useful method to observe the time variation of gas CO2 concentration in soil. Furthermore, it requires no bulky measurement system. A hydrophobic silicone filter prevents water infiltration. Therefore, a sensor whose detection element is covered with a silicone filter can be durable in the field even when experiencing inundation (e.g. farmland with snow melting, wetland with varying water level. The utility of a diffusive model of CO2 sensor covered with silicone filter was examined in laboratory and field experiments. Applying the silicone filter delays the response to change in ambient CO2 concentration, which results from lower gas permeability than those of other conventionally used filters made of materials, such as polytetrafluoroethylene. Theoretically, apart from the precision of the sensor itself, diurnal variation of soil gas CO2 concentration is calculable from obtained series of data with a silicone-covered sensor with negligible error. The error is estimated at approximately 1% of the diurnal amplitude in most cases of a 10-min logging interval. Drastic changes that occur, such as those of a rainfall event, cause a larger gap separating calculated and real values. However, the proportion of this gap to the extent of the drastic increase was extremely small (0.43% for a 10-min logging interval. For accurate estimation, a smoothly varied data series must be prepared as input data. Using a moving average or applying a fitting curve can be useful when using a sensor or data logger with low resolution. Estimating the gas permeability coefficient is crucial for calculation. The gas permeability coefficient can be estimated through laboratory experiments. This study revealed the possibility of evaluating the time variation of soil gas CO2 concentration by installing a diffusive model of silicone-covered sensor in an inundated field.

  19. MEMS Fabry-Perot sensor interrogated by optical system-on-a-chip for simultaneous pressure and temperature sensing.

    Science.gov (United States)

    Pang, Cheng; Bae, Hyungdae; Gupta, Ashwani; Bryden, Kenneth; Yu, Miao

    2013-09-23

    We present a micro-electro-mechanical systems (MEMS) based Fabry-Perot (FP) sensor along with an optical system-on-a-chip (SOC) interrogator for simultaneous pressure and temperature sensing. The sensor employs a simple structure with an air-backed silicon membrane cross-axially bonded to a 45° polished optical fiber. This structure renders two cascaded FP cavities, enabling simultaneous pressure and temperature sensing in close proximity along the optical axis. The optical SOC consists of a broadband source, a MEMS FP tunable filter, a photodetector, and the supporting circuitry, serving as a miniature spectrometer for retrieving the two FP cavity lengths. Within the measured pressure and temperature ranges, experimental results demonstrate that the sensor exhibits a good linear response to external pressure and temperature changes.

  20. Silicon nanowire structures as high-sensitive pH-sensors

    International Nuclear Information System (INIS)

    Belostotskaya, S O; Chuyko, O V; Kuznetsov, A E; Kuznetsov, E V; Rybachek, E N

    2012-01-01

    Sensitive elements for pH-sensors created on silicon nanostructures were researched. Silicon nanostructures have been used as ion-sensitive field effect transistor (ISFET) for the measurement of solution pH. Silicon nanostructures have been fabricated by 'top-down' approach and have been studied as pH sensitive elements. Nanowires have the higher sensitivity. It was shown, that sensitive element, which is made of 'one-dimensional' silicon nanostructure have bigger pH-sensitivity as compared with 'two-dimensional' structure. Integrated element formed from two p- and n-type nanowire ISFET ('inverter') can be used as high sensitivity sensor for local relative change [H+] concentration in very small volume.

  1. SIMULATED 8 MeV NEUTRON RESPONSE FUNCTIONS OF A THIN SILICON NEUTRON SENSOR.

    Science.gov (United States)

    Takada, Masashi; Matsumoto, Tetsuro; Masuda, Akihiko; Nunomiya, Tomoya; Aoyama, Kei; Nakamura, Takashi

    2017-12-22

    Neutron response functions of a thin silicon neutron sensor are simulated using PHITS2 and MCNP6 codes for an 8 MeV neutron beam at angles of incidence of 0°, 30° and 60°. The contributions of alpha particles created from the 28Si(n,α)25Mg reaction and the silicon nuclei scattered elastically by neutrons in the silicon sensor have not been well reproduced using the MCNP6 code. The 8 MeV neutron response functions simulated using the PHITS2 code with an accurate event generator mode are in good agreement with experimental results and include the contributions of the alpha particles and silicon nuclei. © The Author(s) 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  2. Effect of oxygen and hydrogen on the optical and electrical characteristics of porous silicon. Towards sensor applications

    International Nuclear Information System (INIS)

    Green, S.

    2000-02-01

    The effect of adsorbed oxygen and hydrogen gas on porous silicon has been investigated using two different techniques, viz. optical and electrical. The photoluminescence quenching by oxygen and hydrogen was found to be reversible with a response time of the order of 3000 s. Unlike any reported porous silicon gas quenching systems, both the extent and rate of quenching were found to be a function of photoluminescence wavelength. The quenching is attributed to charge transfer from the conduction band of porous silicon to the lowest unoccupied molecular orbital of oxygen and hydrogen, respectively. Surface conductance measurements (aluminium contacts) show that the principal charge transfer process is via tunnelling, with some conduction through the underlying bulk p-type silicon layer. Symmetrical current-voltage plots were obtained for this system which were attributed to pinning of the aluminium-porous silicon Fermi level at mid-gap by the high surface trap density. An approximate doubling of the aluminium electrode separation was found to reduce approximately fourfold the initial rate of increase in surface conductance on adsorption of oxygen at a pressure of 10 torr. To the best of the author's knowledge this is the first time that such an effect has been reported in a room temperature solid state gas sensor. Gas sensitivity measurements using surface contacts show a logarithmic response to the concentration of oxygen up to a pressure of 100 torr with a rapid response, of 300 s. A 39% increase in surface conductance occurs on exposure of the device to 100 torr of oxygen. The surface conductance of the device decreases by 34% on exposure to one atmosphere of hydrogen with a response time of the order 2000 s. Transverse conductance (DC) measurements show that Au/PS/p-Si/Al..Ag devices behave like a field-dependent diode. An admittance spectroscopy technique has been applied to porous silicon for the first time to calculate g 0 , the trap density at the Fermi level

  3. Discrete sensors distribution for accurate plantar pressure analyses.

    Science.gov (United States)

    Claverie, Laetitia; Ille, Anne; Moretto, Pierre

    2016-12-01

    The aim of this study was to determine the distribution of discrete sensors under the footprint for accurate plantar pressure analyses. For this purpose, two different sensor layouts have been tested and compared, to determine which was the most accurate to monitor plantar pressure with wireless devices in research and/or clinical practice. Ten healthy volunteers participated in the study (age range: 23-58 years). The barycenter of pressures (BoP) determined from the plantar pressure system (W-inshoe®) was compared to the center of pressures (CoP) determined from a force platform (AMTI) in the medial-lateral (ML) and anterior-posterior (AP) directions. Then, the vertical ground reaction force (vGRF) obtained from both W-inshoe® and force platform was compared for both layouts for each subject. The BoP and vGRF determined from the plantar pressure system data showed good correlation (SCC) with those determined from the force platform data, notably for the second sensor organization (ML SCC= 0.95; AP SCC=0.99; vGRF SCC=0.91). The study demonstrates that an adjusted placement of removable sensors is key to accurate plantar pressure analyses. These results are promising for a plantar pressure recording outside clinical or laboratory settings, for long time monitoring, real time feedback or for whatever activity requiring a low-cost system. Copyright © 2016 IPEM. Published by Elsevier Ltd. All rights reserved.

  4. Integrated pressure sensing using capacitive Coriolis mass flow sensors

    NARCIS (Netherlands)

    Alveringh, Dennis; Wiegerink, Remco J.; Lötters, Joost Conrad

    2017-01-01

    The cross-sectional shape of microchannels is, dependent on the fabrication method, never perfectly circular. Consequently, the channels deform with the pressure, which is a non-ideal effect in flow sensors, but may be used for pressure sensing. Multiple suspended channels with different lengths

  5. Diaphragm size and sensitivity for fiber optic pressure sensors

    Science.gov (United States)

    He, Gang; Cuomo, Frank W.; Zuckerwar, Allan J.

    1991-01-01

    A mechanism which leads to a significant increase in sensitivity and linear operating range in reflective type fiber optic pressure transducers with minute active dimensions is studied. A general theoretical formalism is presented which is in good agreement with the experimental data. These results are found useful in the development of small pressure sensors used in turbulent boundary layer studies and other applications.

  6. Intrinsic Low Hysteresis Touch Mode Capacitive Pressure Sensor

    DEFF Research Database (Denmark)

    Fragiacomo, Giulio; Pedersen, Thomas; Hansen, Ole

    2011-01-01

    Hysteresis has always been one of the main concerns when fabricating touch mode capacitive pressure sensors (TMCPS). This phenomenon can be fought at two different levels: during fabrication or after fabrication with the aid of a dedicated signal conditioning circuit. We will describe...... a microfabrication step that can be introduced in order to reduce drastically the hysteresis of this type of sensors without compromising their sensitivity. Medium-high range (0 to 10 bar absolute pressure) TMCPS with a capacitive signal span of over 100pF and less than 1 % hysteresis in the entire pressure range...

  7. Detecting endoleaks after endovascular AAA repair with a minimally invasive, implantable, telemetric pressure sensor: an in vitro study

    International Nuclear Information System (INIS)

    Springer, Fabian; Pfeffer, Joachim-Georg; Schmitz-Rode, Thomas; Schlierf, Roland; Schnakenberg, Uwe; Mahnken, Andreas H.

    2007-01-01

    A feasibility study on a completely digital telemetric pressure sensor (TPS) to detect endoleaks was performed in an in vitro model of an abdominal aortic aneurysm (AAA). An endovascular-stented AAA silicone model with different types (I-III) and sizes (3-11 French) of endoleaks was created and pulsatile pressure was applied with physiological flow and pressure rates [mean intraaortic pressure (IAP): 95-130 mmHg] and different degrees of thrombosis of the aneurysm sac. Aneurysm sac pressure (ASP) was measured with the TPS and with wired pressure sensors (WPS) as a reference. Statistical analysis included paired t-test, Pearson's correlation analysis and Bland-Altman plots. After opening an endoleak, the mean ASP increased significantly (P < 0.0001) from 15 to almost 95% of the mean IAP depending on endoleak type and size. ASP could be measured accurately with the TPS and the WPS. The telemetric and wired ASP increase showed a high Pearson's correlation coefficient (r) for a non-thrombosed (r 0.97) and a thrombosed (r = 0.96) aneurysm sac. In an in vitro silicone model, the newly designed telemetric pressure sensor was able to detect the occurrence of an endoleak in a non-invasive way and might be a valuable device for follow-up of endovascular AAA repair. (orig.)

  8. Design, fabrication and characterization of the first AC-coupled silicon microstrip sensors in India

    CERN Document Server

    Aziz, T; Mohanty, G.B.; Patil, M.R.; Rao, K.K.; Rani, Y.R.; Rao, Y.P.P.; Behnamian, H.; Mersi, S.; Naseri, M.

    2014-01-01

    This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor with different width and pitch combinations on a single 4-inch wafer. After finding test procedures for characterizing these AC coupled sensors, we have chosen an optimal width-pitch combination and also fine-tuned various process parameters in order to produce sensors with the desired specifications.

  9. Pirani pressure sensor with distributed temperature measurement

    NARCIS (Netherlands)

    de Jong, B.R.; Bula, W.P.; Zalewski, D.R.; van Baar, J.J.J.; Wiegerink, Remco J.

    2003-01-01

    Surface micro-machined distributed Pirani pressure gauges, with designed heater-to-heat sink distances (gap-heights) of 0.35 μm and 1.10 μm, are successfully fabricated, modeled and characterized. Measurements and model response correspond within 5% of the measured value in a pressure range of 10 to

  10. 3D, Flash, Induced Current Readout for Silicon Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Parker, Sherwood I. [Univ. of Hawaii, Honolulu, HI (United States)

    2014-06-07

    A new method for silicon microstrip and pixel detector readout using (1) 65 nm-technology current amplifers which can, for the first time with silicon microstrop and pixel detectors, have response times far shorter than the charge collection time (2) 3D trench electrodes large enough to subtend a reasonable solid angle at most track locations and so have adequate sensitivity over a substantial volume of pixel, (3) induced signals in addition to, or in place of, collected charge

  11. First thin AC-coupled silicon strip sensors on 8-inch wafers

    Energy Technology Data Exchange (ETDEWEB)

    Bergauer, T., E-mail: thomas.bergauer@oeaw.ac.at [Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, 1050 Wien (Vienna) (Austria); Dragicevic, M.; König, A. [Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, 1050 Wien (Vienna) (Austria); Hacker, J.; Bartl, U. [Infineon Technologies Austria AG, Siemensstrasse 2, 9500 Villach (Austria)

    2016-09-11

    The Institute of High Energy Physics (HEPHY) in Vienna and the semiconductor manufacturer Infineon Technologies Austria AG developed a production process for planar AC-coupled silicon strip sensors manufactured on 200 μm thick 8-inch p-type wafers. In late 2015, the first wafers were delivered featuring the world's largest AC-coupled silicon strip sensors. Detailed electrical measurements were carried out at HEPHY, where single strip and global parameters were measured. Mechanical studies were conducted and the long-term behavior was investigated using a climate chamber. Furthermore, the electrical properties of various test structures were investigated to validate the quality of the manufacturing process.

  12. Signals from fluorescent materials on the surface of silicon micro-strip sensors

    CERN Document Server

    Sperlich, Dennis; The ATLAS collaboration

    2017-01-01

    For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker. In order to minimise the amount of material in the detector, circuit boards with readout electronics will be glued on to the active area of the sensor. Several adhesives investigated to be used for the construction of detector modules were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high- radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By pointing the beam both inside the sensor and parallel to the sensor surface, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibility of silicon strip sensors to light contamination from fluorescent mate...

  13. A Comparative Study of Sound Speed in Air at Room Temperature between a Pressure Sensor and a Sound Sensor

    Science.gov (United States)

    Amrani, D.

    2013-01-01

    This paper deals with the comparison of sound speed measurements in air using two types of sensor that are widely employed in physics and engineering education, namely a pressure sensor and a sound sensor. A computer-based laboratory with pressure and sound sensors was used to carry out measurements of air through a 60 ml syringe. The fast Fourier…

  14. Surface acoustic wave oxygen pressure sensor

    Science.gov (United States)

    Oglesby, Donald M. (Inventor); Upchurch, Billy T. (Inventor); Leighty, Bradley D. (Inventor)

    1994-01-01

    A transducer for the measurement of absolute gas-state oxygen pressure from pressures of less than 100 Pa to atmospheric pressure (1.01 x 10(exp 5) Pa) is based on a standard surface acoustic wave (SAW) device. The piezoelectric material of the SAW device is coated with a compound which will selectively and reversibly bind oxygen. When oxygen is bound by the coating, the mass of the coating increases by an amount equal to the mass of the bound oxygen. Such an increase in the mass of the coating causes a corresponding decrease in the resonant frequency of the SAW device.

  15. Fiber-Optic Pressure Sensor With Dynamic Demodulation Developed

    Science.gov (United States)

    Lekki, John D.

    2002-01-01

    Researchers at the NASA Glenn Research Center developed in-house a method to detect pressure fluctuations using a fiber-optic sensor and dynamic signal processing. This work was in support of the Intelligent Systems Controls and Operations project under NASA's Information Technology Base Research Program. We constructed an optical pressure sensor by attaching a fiber-optic Bragg grating to a flexible membrane and then adhering the membrane to one end of a small cylinder. The other end of the cylinder was left open and exposed to pressure variations from a pulsed air jet. These pressure variations flexed the membrane, inducing a strain in the fiber-optic grating. This strain was read out optically with a dynamic spectrometer to record changes in the wavelength of light reflected from the grating. The dynamic spectrometer was built in-house to detect very small wavelength shifts induced by the pressure fluctuations. The spectrometer is an unbalanced interferometer specifically designed for maximum sensitivity to wavelength shifts. An optimum pathlength difference, which was determined empirically, resulted in a 14-percent sensitivity improvement over theoretically predicted path-length differences. This difference is suspected to be from uncertainty about the spectral power difference of the signal reflected from the Bragg grating. The figure shows the output of the dynamic spectrometer as the sensor was exposed to a nominally 2-kPa peak-to-peak square-wave pressure fluctuation. Good tracking, sensitivity, and signal-to-noise ratios are evident even though the sensor was constructed as a proof-of-concept and was not optimized in any way. Therefore the fiber-optic Bragg grating, which is normally considered a good candidate as a strain or temperature sensor, also has been shown to be a good candidate for a dynamic pressure sensor.

  16. Investigation of silicon sensors for their use as antiproton annihilation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pacifico, N., E-mail: nicola.pacifico@cern.ch [University of Bergen, Institute of Physics and Technology, Allégaten 55, 5007 Bergen (Norway); Aghion, S. [Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sez. di Milano, Via Celoria 16, 20133 Milano (Italy); Ahlén, O. [European Organisation for Nuclear Research, Physics Department, 1211 Geneva 23 (Switzerland); Belov, A.S. [Institute for Nuclear Research of the Russian Academy of Sciences, Moscow 117312 (Russian Federation); Bonomi, G. [University of Brescia, Department of Mechanical and Industrial Engineering, Via Branze 38, 25133 Brescia (Italy); Istituto Nazionale di Fisica Nucleare, Sez. di Pavia, Via Agostino Bassi 6, 27100 Pavia (Italy); Bräunig, P. [Kirchhoff Institute for Physics, Im Neuenheimer Feld 227, 69120 Heidelberg (Germany); Bremer, J. [European Organisation for Nuclear Research, Physics Department, 1211 Geneva 23 (Switzerland); Brusa, R.S. [Department of Physics, University of Trento, via Sommarive 14, 38123 Povo, Trento (Italy); INFN-TIFPA, via Sommarive 14, 38123 Povo, Trento (Italy); Burghart, G. [European Organisation for Nuclear Research, Physics Department, 1211 Geneva 23 (Switzerland); Cabaret, L. [Laboratoire Aimé Cotton, CNRS, Université Paris Sud, ENS Cachan, Bâtiment 505, Campus d' Orsay, 91405 Orsay Cedex (France); Caccia, M. [University of Insubria, Dipartimento di Scienza ed Alta Tecnologia, via Valleggio 11, Como (Italy); Canali, C. [University of Zurich, Physics Institute, Winterthurerstrasse 190, 8057 Zurich (Switzerland); Caravita, R. [Istituto Nazionale di Fisica Nucleare, Sez. di Genova, Via Dodecaneso 33, 16146 Genova (Italy); University of Genoa, Department of Physics, Via Dodecaneso 33, 16146 Genova (Italy); Castelli, F. [University of Milano, Department of Physics, Via Celoria 16, 20133 Milano (Italy); and others

    2014-11-21

    We present here a new application of silicon sensors aimed at the direct detection of antinucleons annihilations taking place inside the sensor's volume. Such detectors are interesting particularly for the measurement of antimatter properties and will be used as part of the gravity measurement module in the AEg{sup ¯}IS experiment at the CERN Antiproton Decelerator. One of the goals of the AEg{sup ¯}IS experiment is to measure the gravitational acceleration of antihydrogen with 1% precision. Three different silicon sensor geometries have been tested with an antiproton beam to investigate their properties as annihilation detection devices: strip planar, 3D pixels and monolithic pixel planar. In all cases we were successfully detecting annihilations taking place in the sensor and we were able to make a first characterization of the clusters and tracks.

  17. Studies of adhesives and metal contacts on silicon strip sensors for the ATLAS Inner Tracker

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00407830; Moenig, Klaus

    2018-04-04

    This thesis presents studies investigating the use of adhesives on the active area of silicon strip sensors for the construction of silicon strip detector modules for the ATLAS Phase-II Upgrade. 60 ATLAS07 miniature sensors were tested using three UV cure glues in comparison with the current baseline glue (a non-conductive epoxy). The impact of irradiation on the chemical composition of all adhesives under investigation was studied using three standard methods for chemical analysis: quadrupole time-of-flight mass spectroscopy, gel permeability chromatography and gas chromatography combined with mass spectrometry (GC-MS). GC-MS analyses of glue sample extracts before and after irradiation showed molecule cross-linking and broken chemical bonds to different extents and allowed to quantify the radiation hardness of the adhesives under investigation. Probe station measurements were used to investigate electrical characteristics of sensors partially covered with adhesives in comparison with sensors without adhesiv...

  18. Using pressure square-like wave to measure the dynamic characteristics of piezoelectric pressure sensor

    International Nuclear Information System (INIS)

    Han, L-L; Tsung, T-T; Chen, L-C; Chang Ho; Jwo, C-S

    2005-01-01

    Piezoelectric pressure sensors are commonly used to measuring the dynamic characteristics in a hydraulic system. The dynamic measurements require a pressure sensor which has a high response rate. In this paper, we proposed use of a pressure square wave to excite the piezoelectric pressure sensor. Experimental frequencies are 0.5, 1.0, 1.5, and 2.0 kHz at 10, 15, 20 bar, respectively. Results show that the waveform of time-domain and frequencydomain response are quite different under above testing conditions. The higher the frequencies tested, the faster the pressure-rise speeds obtained. Similarly, the higher the testing pressure, the shorter the rise time attained

  19. Optical temperature sensor with enhanced sensitivity by employing hybrid waveguides in a silicon Mach-Zehnder interferometer

    DEFF Research Database (Denmark)

    Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

    2016-01-01

    We report on a novel design of an on-chip optical temperature sensor based on a Mach-Zehnder interferometer configuration where the two arms consist of hybrid waveguides providing opposite temperature-dependent phase changes to enhance the temperature sensitivity of the sensor. The sensitivity...... of the fabricated sensor with silicon/polymer hybrid waveguides is measured to be 172 pm/°C, which is two times larger than a conventional all-silicon optical temperature sensor (∼80 pm/°C). Moreover, a design with silicon/titanium dioxide hybrid waveguides is by calculation expected to have a sensitivity as high...

  20. Embedding piezoresistive pressure sensors to obtain online pressure profiles inside fiber composite laminates.

    Science.gov (United States)

    Moghaddam, Maryam Kahali; Breede, Arne; Brauner, Christian; Lang, Walter

    2015-03-27

    The production of large and complex parts using fiber composite materials is costly due to the frequent formation of voids, porosity and waste products. By embedding different types of sensors and monitoring the process in real time, the amount of wastage can be significantly reduced. This work focuses on developing a knowledge-based method to improve and ensure complete impregnation of the fibers before initiation of the resin cure. Piezoresistive and capacitive pressure sensors were embedded in fiber composite laminates to measure the real-time the pressure values inside the laminate. A change of pressure indicates resin infusion. The sensors were placed in the laminate and the resin was infused by vacuum. The embedded piezoresistive pressure sensors were able to track the vacuum pressure in the fiber composite laminate setup, as well as the arrival of the resin at the sensor. The pressure increase due to closing the resin inlet was also measured. In contrast, the capacitive type of sensor was found to be inappropriate for measuring these quantities. The following study demonstrates real-time monitoring of pressure changes inside the fiber composite laminate, which validate the use of Darcy's law in porous media to control the resin flow during infusion.

  1. Film bulk acoustic resonator pressure sensor with self temperature reference

    International Nuclear Information System (INIS)

    He, X L; Jin, P C; Zhou, J; Wang, W B; Dong, S R; Luo, J K; Garcia-Gancedo, L; Flewitt, A J; Milne, W I

    2012-01-01

    A novel film bulk acoustic resonator (FBAR) with two resonant frequencies which have opposite reactions to temperature changes has been designed. The two resonant modes respond differently to changes in temperature and pressure, with the frequency shift being linearly correlated with temperature and pressure changes. By utilizing the FBAR's sealed back trench as a cavity, an on-chip single FBAR sensor suitable for measuring pressure and temperature simultaneously is proposed and demonstrated. The experimental results show that the pressure coefficient of frequency for the lower frequency peak of the FBAR sensors is approximately −17.4 ppm kPa −1 , while that for the second peak is approximately −6.1 ppm kPa −1 , both of them being much more sensitive than other existing pressure sensors. This dual mode on-chip pressure sensor is simple in structure and operation, can be fabricated at very low cost, and yet requires no specific package, therefore has great potential for applications. (paper)

  2. IV and CV curves for irradiated prototype BTeV silicon pixel sensors

    International Nuclear Information System (INIS)

    Coluccia, Maria R.

    2002-01-01

    The authors present IV and CV curves for irradiated prototype n + /n/p + silicon pixel sensors, intended for use in the BTeV experiment at Fermilab. They tested pixel sensors from various vendors and with two pixel isolation layouts: p-stop and p-spray. Results are based on exposure with 200 MeV protons up to 6 x 10 14 protons/cm 2

  3. Transparent, Flexible, Conformal Capacitive Pressure Sensors with Nanoparticles.

    Science.gov (United States)

    Kim, Hyeohn; Kim, Gwangmook; Kim, Taehoon; Lee, Sangwoo; Kang, Donyoung; Hwang, Min-Soo; Chae, Youngcheol; Kang, Shinill; Lee, Hyungsuk; Park, Hong-Gyu; Shim, Wooyoung

    2018-02-01

    The fundamental challenge in designing transparent pressure sensors is the ideal combination of high optical transparency and high pressure sensitivity. Satisfying these competing demands is commonly achieved by a compromise between the transparency and usage of a patterned dielectric surface, which increases pressure sensitivity, but decreases transparency. Herein, a design strategy for fabricating high-transparency and high-sensitivity capacitive pressure sensors is proposed, which relies on the multiple states of nanoparticle dispersity resulting in enhanced surface roughness and light transmittance. We utilize two nanoparticle dispersion states on a surface: (i) homogeneous dispersion, where each nanoparticle (≈500 nm) with a size comparable to the visible light wavelength has low light scattering; and (ii) heterogeneous dispersion, where aggregated nanoparticles form a micrometer-sized feature, increasing pressure sensitivity. This approach is experimentally verified using a nanoparticle-dispersed polymer composite, which has high pressure sensitivity (1.0 kPa -1 ), and demonstrates excellent transparency (>95%). We demonstrate that the integration of nanoparticle-dispersed capacitor elements into an array readily yields a real-time pressure monitoring application and a fully functional touch device capable of acting as a pressure sensor-based input device, thereby opening up new avenues to establish processing techniques that are effective on the nanoscale yet applicable to macroscopic processing. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. A Micromachined Piezoresistive Pressure Sensor with a Shield Layer

    Science.gov (United States)

    Cao, Gang; Wang, Xiaoping; Xu, Yong; Liu, Sheng

    2016-01-01

    This paper presents a piezoresistive pressure sensor with a shield layer for improved stability. Compared with the conventional piezoresistive pressure sensors, the new one reported in this paper has an n-type shield layer that covers p-type piezoresistors. This shield layer aims to minimize the impact of electrical field and reduce the temperature sensitivity of piezoresistors. The proposed sensors have been successfully fabricated by bulk-micromachining techniques. A sensitivity of 0.022 mV/V/kPa and a maximum non-linearity of 0.085% FS are obtained in a pressure range of 1 MPa. After numerical simulation, the role of the shield layer has been experimentally investigated. It is demonstrated that the shield layer is able to reduce the drift caused by electrical field and ambient temperature variation. PMID:27529254

  5. Simulations of piezoelectric pressure sensor for radial artery pulse measurement

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, Abhay B. [Department of Electronic Science, University of Pune, Pune 411 007 (India); Kalange, Ashok E. [Department of Electronic Science, University of Pune, Pune 411 007 (India); Tuljaram Chaturchand College, Baramati 413 102 (India); Bodas, Dhananjay, E-mail: dhananjay.bodas@gmail.co [Center for Nanobio Sciences, Agharkar Research Institute, Pune 411 004 (India); Gangal, S.A. [Department of Electronic Science, University of Pune, Pune 411 007 (India)

    2010-04-15

    A radial artery pulse is used to diagnose human body constitution (Prakruti) in Ayurveda. A system consisting of piezoelectric sensor (22 mm x 12 mm), data acquisition card and LabView software was used to record the pulse data. The pulse obtained from the sensor was noisy, even though signal processing was done. Moreover due to large sized senor accurate measurements were not possible. Hence, a need was felt to develop a sensor of the size of the order of finger tip with a resonant frequency of the order of 1 Hz. A micromachined pressure sensor based on piezoelectric sensing mechanism was designed and simulated using CoventorWare. Simulations were carried out by varying dimensions of the sensor to optimize the resonant frequency, stresses and voltage generated as a function of applied pressure. All simulations were done with pressure ranging of 1-30 kPa, which is the range used by Ayurvedic practitioners for diagnosis. Preliminary work on fabrication of such a sensor was carried out successfully.

  6. Simulations of piezoelectric pressure sensor for radial artery pulse measurement

    International Nuclear Information System (INIS)

    Joshi, Abhay B.; Kalange, Ashok E.; Bodas, Dhananjay; Gangal, S.A.

    2010-01-01

    A radial artery pulse is used to diagnose human body constitution (Prakruti) in Ayurveda. A system consisting of piezoelectric sensor (22 mm x 12 mm), data acquisition card and LabView software was used to record the pulse data. The pulse obtained from the sensor was noisy, even though signal processing was done. Moreover due to large sized senor accurate measurements were not possible. Hence, a need was felt to develop a sensor of the size of the order of finger tip with a resonant frequency of the order of 1 Hz. A micromachined pressure sensor based on piezoelectric sensing mechanism was designed and simulated using CoventorWare. Simulations were carried out by varying dimensions of the sensor to optimize the resonant frequency, stresses and voltage generated as a function of applied pressure. All simulations were done with pressure ranging of 1-30 kPa, which is the range used by Ayurvedic practitioners for diagnosis. Preliminary work on fabrication of such a sensor was carried out successfully.

  7. New pastes with high gauge factor for piezoresistive pressure sensors

    International Nuclear Information System (INIS)

    Szczepanski, Z.; Kalenik, J.; Gonciara, P.; Jakubowska, M.

    1999-01-01

    The thick film resistors with gauge factor exhibit high reversible changes of resistance under the influence of external load. The piezoresistivity of thick film resistors is utilized in piezoresistive pressure sensors as well as sensors, those allow force detection. The results of studies concerning piezoresistivity in thick film resistors made of pastes elaborated by the authors are presented in this paper. The GF measurement method has been designed and several resistive pastes were tested. The values of gauge factor for these resistive compositions have been evaluated and piezoresistive properties were compared with ESL resistive composition designed for sensor application. (author)

  8. A dual-unit pressure sensor for on-chip self-compensation of zero-point temperature drift

    International Nuclear Information System (INIS)

    Wang, Jiachou; Li, Xinxin

    2014-01-01

    A novel dual-unit piezoresistive pressure sensor, consisting of a sensing unit and a dummy unit, is proposed and developed for on-chip self-compensation for zero-point temperature drift. With an MIS (microholes inter-etch and sealing) process implemented only from the front side of single (1 1 1) silicon wafers, a pressure sensitive unit and another identically structured pressure insensitive dummy unit are compactly integrated on-chip to eliminate unbalance factors induced zero-point temperature-drift by mutual compensation between the two units. Besides, both units are physically suspended from silicon substrate to further suppress packaging-stress induced temperature drift. A simultaneously processes ventilation hole-channel structure is connected with the pressure reference cavity of the dummy unit to make it insensitive to detected pressure. In spite of the additional dummy unit, the sensor chip dimensions are still as small as 1.2 mm × 1.2 mm × 0.4 mm. The proposed dual-unit sensor is fabricated and tested, with the tested sensitivity being 0.104 mV kPa −1 3.3 V −1 , nonlinearity of less than 0.08% · FSO and overall accuracy error of ± 0.18% · FSO. Without using any extra compensation method, the sensor features an ultra-low temperature coefficient of offset (TCO) of 0.002% °C −1 · FSO that is much better than the performance of conventional pressure sensors. The highly stable and small-sized sensors are promising for low cost production and applications. (paper)

  9. A CMOS pressure sensor tag chip for passive wireless applications.

    Science.gov (United States)

    Deng, Fangming; He, Yigang; Li, Bing; Zuo, Lei; Wu, Xiang; Fu, Zhihui

    2015-03-23

    This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of -20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation.

  10. arXiv Time resolution of silicon pixel sensors

    CERN Document Server

    Riegler, W.

    2017-11-21

    We derive expressions for the time resolution of silicon detectors, using the Landau theory and a PAI model for describing the charge deposit of high energy particles. First we use the centroid time of the induced signal and derive analytic expressions for the three components contributing to the time resolution, namely charge deposit fluctuations, noise and fluctuations of the signal shape due to weighting field variations. Then we derive expressions for the time resolution using leading edge discrimination of the signal for various electronics shaping times. Time resolution of silicon detectors with internal gain is discussed as well.

  11. A method enabling simultaneous pressure and temperature measurement using a single piezoresistive MEMS pressure sensor

    International Nuclear Information System (INIS)

    Frantlović, Miloš; Stanković, Srđan; Jokić, Ivana; Lazić, Žarko; Smiljanić, Milče; Obradov, Marko; Vukelić, Branko; Jakšić, Zoran

    2016-01-01

    In this paper we present a high-performance, simple and low-cost method for simultaneous measurement of pressure and temperature using a single piezoresistive MEMS pressure sensor. The proposed measurement method utilizes the parasitic temperature sensitivity of the sensing element for both pressure measurement correction and temperature measurement. A parametric mathematical model of the sensor was established and its parameters were calculated using the obtained characterization data. Based on the model, a real-time sensor correction for both pressure and temperature measurements was implemented in a target measurement system. The proposed method was verified experimentally on a group of typical industrial-grade piezoresistive sensors. The obtained results indicate that the method enables the pressure measurement performance to exceed that of typical digital industrial pressure transmitters, achieving at the same time the temperature measurement performance comparable to industrial-grade platinum resistance temperature sensors. The presented work is directly applicable in industrial instrumentation, where it can add temperature measurement capability to the existing pressure measurement instruments, requiring little or no additional hardware, and without adverse effects on pressure measurement performance. (paper)

  12. An oxygen pressure sensor using surface acoustic wave devices

    Science.gov (United States)

    Leighty, Bradley D.; Upchurch, Billy T.; Oglesby, Donald M.

    1993-01-01

    Surface acoustic wave (SAW) piezoelectric devices are finding widespread applications in many arenas, particularly in the area of chemical sensing. We have developed an oxygen pressure sensor based on coating a SAW device with an oxygen binding agent which can be tailored to provide variable sensitivity. The coating is prepared by dissolving an oxygen binding agent in a toluene solution of a copolymer which is then sprayed onto the surface of the SAW device. Experimental data shows the feasibility of tailoring sensors to measure the partial pressure of oxygen from 2.6 to 67 KPa (20 to 500 torr). Potential applications of this technology are discussed.

  13. Micromachined capacitive pressure sensor with signal conditioning electronics

    DEFF Research Database (Denmark)

    Fragiacomo, Giulio

    signal) of the device. Fusion bonding of two wafers has been used in order to obtain the cavities, this is also the only non-standard cleanroom process involved in the fabrication of the transducers. The device developed can measure absolute pressures from 0 to 10 bar with sensitivity up to 80 p...... characterized and presented at Grundfos Direct Sensors A/S and constitute the preliminary work for a new product which is intended target the low power or wireless pressure sensor for harsh environment market....

  14. Micro Electro-Mechanical System (MEMS) Pressure Sensor for Footwear

    Science.gov (United States)

    Kholwadwala, Deepesh K.; Rohrer, Brandon R.; Spletzer, Barry L.; Galambos, Paul C.; Wheeler, Jason W.; Hobart, Clinton G.; Givler, Richard C.

    2008-09-23

    Footwear comprises a sole and a plurality of sealed cavities contained within the sole. The sealed cavities can be incorporated as deformable containers within an elastic medium, comprising the sole. A plurality of micro electro-mechanical system (MEMS) pressure sensors are respectively contained within the sealed cavity plurality, and can be adapted to measure static and dynamic pressure within each of the sealed cavities. The pressure measurements can provide information relating to the contact pressure distribution between the sole of the footwear and the wearer's environment.

  15. Realization of an integrated VDF/TrFE copolymer-on-silicon pyroelectric sensor

    NARCIS (Netherlands)

    Setiadi, D.; Setiadi, D.; Regtien, Paulus P.L.; Sarro, P.M.

    1995-01-01

    An integrated pyroelectric sensor based on a vinylidene fluoride trifluoroethylene (VDF/TrFE) copolymer is presented. A silicon substrate that contains FET readout electronics is coated with the VDF/TrFE copolymer film using a spin-coating technique. On-chip poling of the copolymer has been applied

  16. Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

    Directory of Open Access Journals (Sweden)

    Iatsunskyi I. R.

    2013-12-01

    Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

  17. Development of clinically relevant implantable pressure sensors: perspectives and challenges.

    Science.gov (United States)

    Clausen, Ingelin; Glott, Thomas

    2014-09-22

    This review describes different aspects to consider when developing implantable pressure sensor systems. Measurement of pressure is in general highly important in clinical practice and medical research. Due to the small size, light weight and low energy consumption Micro Electro Mechanical Systems (MEMS) technology represents new possibilities for monitoring of physiological parameters inside the human body. Development of clinical relevant sensors requires close collaboration between technological experts and medical clinicians.  Site of operation, size restrictions, patient safety, and required measurement range and resolution, are only some conditions that must be taken into account. An implantable device has to operate under very hostile conditions. Long-term in vivo pressure measurements are particularly demanding because the pressure sensitive part of the sensor must be in direct or indirect physical contact with the medium for which we want to detect the pressure. New sensor packaging concepts are demanded and must be developed through combined effort between scientists in MEMS technology, material science, and biology. Before launching a new medical device on the market, clinical studies must be performed. Regulatory documents and international standards set the premises for how such studies shall be conducted and reported.

  18. Foot modeling and smart plantar pressure reconstruction from three sensors.

    Science.gov (United States)

    Ghaida, Hussein Abou; Mottet, Serge; Goujon, Jean-Marc

    2014-01-01

    In order to monitor pressure under feet, this study presents a biomechanical model of the human foot. The main elements of the foot that induce the plantar pressure distribution are described. Then the link between the forces applied at the ankle and the distribution of the plantar pressure is established. Assumptions are made by defining the concepts of a 3D internal foot shape, which can be extracted from the plantar pressure measurements, and a uniform elastic medium, which describes the soft tissues behaviour. In a second part, we show that just 3 discrete pressure sensors per foot are enough to generate real time plantar pressure cartographies in the standing position or during walking. Finally, the generated cartographies are compared with pressure cartographies issued from the F-SCAN system. The results show 0.01 daN (2% of full scale) average error, in the standing position.

  19. The silicon microstrip sensors of the ATLAS semiconductor tracker

    Czech Academy of Sciences Publication Activity Database

    Ahmad, A.; Albrechtskirchinger, Z.; Allport, P.; Böhm, Jan; Mikeštíková, Marcela; Šťastný, Jan

    2007-01-01

    Roč. 578, - (2007), s. 98-118 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10100502 Keywords : ATLAS * SCT * silicon * microstrip * module * LHC Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.114, year: 2007

  20. Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

    International Nuclear Information System (INIS)

    Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P.C.; Toledano-Luque, M.; Prado, A. del; San Andres, E.; Lucia, M.L.

    2011-01-01

    Al/ScO x /SiN x /n-Si and Al/ScO x /SiO x /n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high-pressure sputtering on different substrates to study the dielectric/insulator interface quality. The substrates were silicon nitride and native silicon oxide. The use of a silicon nitride interfacial layer between the silicon substrate and the scandium oxide layer improves interface quality, as interfacial state density and defect density inside the insulator are decreased.

  1. Flexible Ferroelectric Sensors with Ultrahigh Pressure Sensitivity and Linear Response over Exceptionally Broad Pressure Range.

    Science.gov (United States)

    Lee, Youngoh; Park, Jonghwa; Cho, Soowon; Shin, Young-Eun; Lee, Hochan; Kim, Jinyoung; Myoung, Jinyoung; Cho, Seungse; Kang, Saewon; Baig, Chunggi; Ko, Hyunhyub

    2018-04-24

    Flexible pressure sensors with a high sensitivity over a broad linear range can simplify wearable sensing systems without additional signal processing for the linear output, enabling device miniaturization and low power consumption. Here, we demonstrate a flexible ferroelectric sensor with ultrahigh pressure sensitivity and linear response over an exceptionally broad pressure range based on the material and structural design of ferroelectric composites with a multilayer interlocked microdome geometry. Due to the stress concentration between interlocked microdome arrays and increased contact area in the multilayer design, the flexible ferroelectric sensors could perceive static/dynamic pressure with high sensitivity (47.7 kPa -1 , 1.3 Pa minimum detection). In addition, efficient stress distribution between stacked multilayers enables linear sensing over exceptionally broad pressure range (0.0013-353 kPa) with fast response time (20 ms) and high reliability over 5000 repetitive cycles even at an extremely high pressure of 272 kPa. Our sensor can be used to monitor diverse stimuli from a low to a high pressure range including weak gas flow, acoustic sound, wrist pulse pressure, respiration, and foot pressure with a single device.

  2. Oxygen partial pressure sensor for gases

    International Nuclear Information System (INIS)

    Barbero, J.A.; Azcona, M.A.; Orce, A.

    1997-01-01

    Precise measurement of very low oxygen partial pressure is important in both laboratories and industries. Particularly in nuclear industry, it is relevant in the different steps of the nuclear fuel fabrication. It is presented an instrument which is handy and of easy construction, suitable for the measurement of oxygen partial pressure of gases, in the range of 10 -6 -1 atm. It is based on a solid electrolyte galvanic cell, using Yttria doped zirconia as a ceramic membrane. Through an indirect measurement and calibration, the instrument can be used to measure the content of free oxygen in liquids. It is a import feature in NPP instrumentation. The equipment was calibrated with mixtures of special nonreactive gases. (author). 5 refs

  3. Oxygen partial pressure sensor for gases

    Energy Technology Data Exchange (ETDEWEB)

    Barbero, J.A.; Azcona, M.A.; Orce, A. [Comision Nacional de Energia Atomica, San Carlos de Bariloche (Argentina). Centro Atomico Bariloche

    1997-10-01

    Precise measurement of very low oxygen partial pressure is important in both laboratories and industries. Particularly in nuclear industry, it is relevant in the different steps of the nuclear fuel fabrication. It is presented an instrument which is handy and of easy construction, suitable for the measurement of oxygen partial pressure of gases, in the range of 10{sup -6}-1 atm. It is based on a solid electrolyte galvanic cell, using Yttria doped zirconia as a ceramic membrane. Through an indirect measurement and calibration, the instrument can be used to measure the content of free oxygen in liquids. It is a import feature in NPP instrumentation. The equipment was calibrated with mixtures of special nonreactive gases. (author). 5 refs.

  4. Optimizing Floating Guard Ring Designs for FASPAX N-in-P Silicon Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Kyung-Wook [Argonne; Bradford, Robert [Argonne; Lipton, Ronald [Fermilab; Deptuch, Gregory [Fermilab; Fahim, Farah [Fermilab; Madden, Tim [Argonne; Zimmerman, Tom [Fermilab

    2016-10-06

    FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with intended $\\mbox{13 $MHz$}$ image rate, FASPAX will also incorporate a novel integration circuit to achieve wide dynamic range, from single photon sensitivity to $10^{\\text{5}}$ x-rays/pixel/pulse. To achieve these ambitious goals, a novel silicon sensor design is required. This paper will detail early design of the FASPAX sensor. Results from TCAD optimization studies, and characterization of prototype sensors will be presented.

  5. The Capability of Fiber Bragg Grating Sensors to Measure Amputees’ Trans-Tibial Stump/Socket Interface Pressures

    Directory of Open Access Journals (Sweden)

    Faisal Rafiq Mahamd Adikan

    2013-08-01

    Full Text Available This study presents the first investigation into the capability of fiber Bragg grating (FBG sensors to measure interface pressure between the stump and the prosthetic sockets of a trans-tibial amputee. FBG element(s were recoated with and embedded in a thin layer of epoxy material to form a sensing pad, which was in turn embedded in a silicone polymer material to form a pressure sensor. The sensor was tested in real time by inserting a heavy-duty balloon into the socket and inflating it by using an air compressor. This test was conducted to examine the sensitivity and repeatability of the sensor when subjected to pressure from the stump of the trans-tibial amputee and to mimic the actual environment of the amputee’s Patellar Tendon (PT bar. The sensor exhibited a sensitivity of 127 pm/N and a maximum FSO hysteresis of around ~0.09 in real-time operation. Very good reliability was achieved when the sensor was utilized for in situ measurements. This study may lead to smart FBG-based amputee stump/socket structures for pressure monitoring in amputee socket systems, which will result in better-designed prosthetic sockets that ensure improved patient satisfaction.

  6. The capability of fiber Bragg grating sensors to measure amputees' trans-tibial stump/socket interface pressures.

    Science.gov (United States)

    Al-Fakih, Ebrahim A; Osman, Noor Azuan Abu; Eshraghi, Arezoo; Adikan, Faisal Rafiq Mahamd

    2013-08-12

    This study presents the first investigation into the capability of fiber Bragg grating (FBG) sensors to measure interface pressure between the stump and the prosthetic sockets of a trans-tibial amputee. FBG element(s) were recoated with and embedded in a thin layer of epoxy material to form a sensing pad, which was in turn embedded in a silicone polymer material to form a pressure sensor. The sensor was tested in real time by inserting a heavy-duty balloon into the socket and inflating it by using an air compressor. This test was conducted to examine the sensitivity and repeatability of the sensor when subjected to pressure from the stump of the trans-tibial amputee and to mimic the actual environment of the amputee's Patellar Tendon (PT) bar. The sensor exhibited a sensitivity of 127 pm/N and a maximum FSO hysteresis of around ~0.09 in real-time operation. Very good reliability was achieved when the sensor was utilized for in situ measurements. This study may lead to smart FBG-based amputee stump/socket structures for pressure monitoring in amputee socket systems, which will result in better-designed prosthetic sockets that ensure improved patient satisfaction.

  7. Characterization of irradiated thin silicon sensors for the CMS phase II pixel upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Centis Vignali, Matteo; Garutti, Erika; Junkes, Alexandra; Steinbrueck, Georg [Institut fuer Experimentalphysik, Universitaet Hamburg (Germany); Eckstein, Doris; Eichhorn, Thomas [Deutsches Elektronen Synchrotron (DESY) (Germany)

    2016-07-01

    The high-luminosity upgrade of the Large Hadron Collider, foreseen for 2025, necessitates the replacement of the tracker of the CMS experiment. The innermost layer of the new pixel detector will be exposed to severe radiation corresponding to a 1 MeV neutron equivalent fluence up to Φ{sub eq} = 2 . 10{sup 16} cm{sup -2} and an ionizing dose of ∼ 10 MGy after an integrated luminosity of 3000 fb{sup -1}. Silicon crystals grown with different methods and sensor designs are under investigation in order to optimize the sensors for such high fluences. Thin planar silicon sensors are good candidates to achieve this goal, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. Epitaxial pad diodes and strip sensors irradiated up to fluences of Φ{sub eq} = 1.3 . 10{sup 16} cm{sup -2} have been characterized in laboratory measurements and beam tests at the DESY II facility. The active thickness of the strip sensors and pad diodes is 100 μm. In addition, strip sensors produced using other growth techniques with a thickness of 200 μm have been studied. In this talk, the results obtained for p-bulk sensors are shown.

  8. Signals from fluorescent materials on the surface of silicon micro-strip sensors

    CERN Document Server

    Sperlich, Dennis; The ATLAS collaboration

    2018-01-01

    For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker (ITk). In order to minimise the amount of material in the ITk, circuit boards with readout electronics will be glued onto the active area of the sensor. Several adhesives, investigated to be used for the construction of detector modules, were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high-radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By positioning the beam parallel to the sensor surfave and pointing it both inside the sensor and above the sensor surface inside the deposited glue, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibilit...

  9. Novel silicon n-on-p edgeless planar pixel sensors for the ATLAS upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Bomben, M., E-mail: marco.bomben@cern.ch [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Bagolini, A.; Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); Bosisio, L. [Università di Trieste, Dipartimento di Fisica and INFN, Trieste (Italy); Calderini, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Università di Pisa, Pisa (Italy); INFN Sez. di Pisa, Pisa (Italy); Chauveau, J. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Université de Genève, Genève (Switzerland); Marchiori, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy)

    2013-12-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.

  10. Novel silicon n-on-p edgeless planar pixel sensors for the ATLAS upgrade

    International Nuclear Information System (INIS)

    Bomben, M.; Bagolini, A.; Boscardin, M.; Bosisio, L.; Calderini, G.; Chauveau, J.; Giacomini, G.; La Rosa, A.; Marchiori, G.; Zorzi, N.

    2013-01-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown

  11. A novel high pressure, high temperature vessel used to conduct long-term stability measurements of silicon MEMS pressure transducers

    Science.gov (United States)

    Wisniewiski, David

    2014-03-01

    The need to quantify and to improve long-term stability of pressure transducers is a persistent requirement from the aerospace sector. Specifically, the incorporation of real-time pressure monitoring in aircraft landing gear, as exemplified in Tire Pressure Monitoring Systems (TPMS), has placed greater demand on the pressure transducer for improved performance and increased reliability which is manifested in low lifecycle cost and minimal maintenance downtime through fuel savings and increased life of the tire. Piezoresistive (PR) silicon MEMS pressure transducers are the primary choice as a transduction method for this measurement owing to their ability to be designed for the harsh environment seen in aircraft landing gear. However, these pressure transducers are only as valuable as the long-term stability they possess to ensure reliable, real-time monitoring over tens of years. The "heart" of the pressure transducer is the silicon MEMS element, and it is at this basic level where the long-term stability is established and needs to be quantified. A novel High Pressure, High Temperature (HPHT) vessel has been designed and constructed to facilitate this critical measurement of the silicon MEMS element directly through a process of mechanically "floating" the silicon MEMS element while being subjected to the extreme environments of pressure and temperature, simultaneously. Furthermore, the HPHT vessel is scalable to permit up to fifty specimens to be tested at one time to provide a statistically significant data population on which to draw reasonable conclusions on long-term stability. With the knowledge gained on the silicon MEMS element, higher level assembly to the pressure transducer envelope package can also be quantified as to the build-effects contribution to long-term stability in the same HPHT vessel due to its accommodating size. Accordingly, a HPHT vessel offering multiple levels of configurability and robustness in data measurement is presented, along

  12. Flexible pressure and proximity sensor surfaces manufactured with organic materials

    NARCIS (Netherlands)

    Fattori, M.; Cantatore, E.; Pauer, G.; Agostinelli, T.; Stadlober, B.; Gold, H.

    2017-01-01

    This paper presents the design of two large-Area active matrixes on foil for pressure and proximity sensing applications. Frontend circuits based on organic thin-film transistors on foil are laminated with screen-printed PDVF-TrFE piezo and pyro sensors to create the complete flexible sensing

  13. An Implantable Intravascular Pressure Sensor for a Ventricular Assist Device

    Directory of Open Access Journals (Sweden)

    Luigi Brancato

    2016-08-01

    Full Text Available The aim of this study is to investigate the intravascular application of a micro-electro-mechanical system (MEMS pressure sensor to directly measure the hemodynamic characteristics of a ventricular assist device (VAD. A bio- and hemo-compatible packaging strategy is implemented, based on a ceramic thick film process. A commercial sub-millimeter piezoresistive sensor is attached to an alumina substrate, and a double coating of polydimethylsiloxane (PDMS and parylene-C is applied. The final size of the packaged device is 2.6 mm by 3.6 mm by 1.8 mm. A prototype electronic circuit for conditioning and read-out of the pressure signal is developed, satisfying the VAD-specific requirements of low power consumption (less than 14.5 mW in continuous mode and small form factor. The packaged sensor has been submitted to extensive in vitro tests. The device displayed a temperature-independent sensitivity (12 μ V/V/mmHg and good in vitro stability when exposed to the continuous flow of saline solution (less than 0.05 mmHg/day drift after 50 h. During in vivo validation, the transducer has been successfully used to record the arterial pressure waveform of a female sheep. A small, intravascular sensor to continuously register the blood pressure at the inflow and the outflow of a VAD is developed and successfully validated in vivo.

  14. Simplifying the design of microstructured optical fibre pressure sensors.

    Science.gov (United States)

    Osório, Jonas H; Chesini, Giancarlo; Serrão, Valdir A; Franco, Marcos A R; Cordeiro, Cristiano M B

    2017-06-07

    In this paper, we propose a way to simplify the design of microstructured optical fibres with high sensitivity to applied pressure. The use of a capillary fibre with an embedded core allows the exploration of the pressure-induced material birefringence due to the capillary wall displacements and the photoelastic effect. An analytical description of pressure-induced material birefringence is provided, and fibre modal characteristics are explored through numerical simulations. Moreover, a capillary fibre with an embedded core is fabricated and used to probe pressure variations. Even though the embedded-core fibre has a non-optimized structure, measurements showed a pressure sensitivity of (1.04 ± 0.01) nm/bar, which compares well with more complex, specially designed fibre geometries reported in the literature. These results demonstrate that this geometry enables a novel route towards the simplification of microstructured fibre-based pressure sensors.

  15. Performance of the ALIBAVA portable readout system with irradiated and non-irradiated microstrip silicon sensors

    International Nuclear Information System (INIS)

    Marco-Hernadez, R.

    2009-01-01

    A readout system for microstrip silicon sensors has been developed as a result of collaboration among the University of Liverpool, the CNM of Barcelona and the IFIC of Valencia. The name of this collaboration is ALIBAVA and it is integrated in the RD50 Collaboration. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256, as an analogue measurement. The system uses two Beetle chips to read out the detector(s). The Beetle chip is an analogue pipelined readout chip used in the LHCb experiment. The system can operate either with non-irradiated and irradiated sensors as well as with n-type and p-type microstrip silicon sensors. Heavily irradiated sensors will be used at the SLHC, so this system is being to research the performance of microstrip silicon sensors in conditions as similar as possible to the SLHC operating conditions. The system has two main parts: a hardware part and a software part. The hardware part acquires the sensor signals either from external trigger inputs, in case of a radioactive source setup is used, or from a synchronised trigger output generated by the system, if a laser setup is used. This acquired data is sent by USB to be stored in a PC for a further processing. The hardware is a dual board based system. The daughterboard is a small board intended for containing two Beetle readout chips as well as fan-ins and detector support to interface the sensors. The motherboard is intended to process the data, to control the whole hardware and to communicate with the software by USB. The software controls the system and processes the data acquired from the sensors in order to store it in an adequate format file. The main characteristics of the system will be described. Results of measurements acquired with n-type and p-type irradiated and non-irradiated detectors using both the laser and the radioactive source setup will be also presented and discussed

  16. Size of silicon strip sensor from 6 inch wafer (right) compared to that from a 4 inch wafer (left).

    CERN Multimedia

    Honma, Alan

    1999-01-01

    Silicon strip sensors made from 6 inch wafers will allow for much larger surface area coverage at a reduced cost per unit surface area. A prototype sensor of size 8cm x 11cm made by Hamamatsu from a 6 inch wafer is shown next to a traditional 6cm x 6cm sensor from a 4 inch wafer.

  17. Improved Reliability of SiC Pressure Sensors for Long Term High Temperature Applications

    Science.gov (United States)

    Okojie, R. S.; Nguyen, V.; Savrun, E.; Lukco, D.

    2011-01-01

    We report advancement in the reliability of silicon carbide pressure sensors operating at 600 C for extended periods. The large temporal drifts in zero pressure offset voltage at 600 C observed previously were significantly suppressed to allow improved reliable operation. This improvement was the result of further enhancement of the electrical and mechanical integrity of the bondpad/contact metallization, and the introduction of studded bump bonding on the pad. The stud bump contact promoted strong adhesion between the Au bond pad and the Au die-attach. The changes in the zero offset voltage and bridge resistance over time at temperature were explained by the microstructure and phase changes within the contact metallization, that were analyzed with Auger electron spectroscopy (AES) and field emission scanning electron microscopy (FE-SEM).

  18. A Manganin Thin Film Ultra-High Pressure Sensor for Microscale Detonation Pressure Measurement

    Directory of Open Access Journals (Sweden)

    Guodong Zhang

    2018-03-01

    Full Text Available With the development of energetic materials (EMs and microelectromechanical systems (MEMS initiating explosive devices, the measurement of detonation pressure generated by EMs in the microscale has become a pressing need. This paper develops a manganin thin film ultra-high pressure sensor based on MEMS technology for measuring the output pressure from micro-detonator. A reliable coefficient is proposed for designing the sensor’s sensitive element better. The sensor employs sandwich structure: the substrate uses a 0.5 mm thick alumina ceramic, the manganin sensitive element with a size of 0.2 mm × 0.1 mm × 2 μm and copper electrodes of 2 μm thick are sputtered sequentially on the substrate, and a 25 μm thick insulating layer of polyimide is wrapped on the sensitive element. The static test shows that the piezoresistive coefficient of manganin thin film is 0.0125 GPa−1. The dynamic experiment indicates that the detonation pressure of micro-detonator is 12.66 GPa, and the response time of the sensor is 37 ns. In a word, the sensor developed in this study is suitable for measuring ultra-high pressure in microscale and has a shorter response time than that of foil-like manganin gauges. Simultaneously, this study could be beneficial to research on ultra-high-pressure sensors with smaller size.

  19. The Silicon Microstrip Sensors of the ATLAS SemiConductor Tracker

    CERN Document Server

    Ahmad, A; Allport, P P; Alonso, J; Andricek, L; Apsimon, R J; Barr, A J; Bates, R L; Beck, G A; Bell, P J; Belymam, A; Benes, J; Berg, C M; Bernabeu, J; Bethke, S; Bingefors, N; Bizzell, J P; Bohm, J; Brenner, R; Brodbeck, T J; Bruckman De Renstrom, P; Buttar, C M; Campbell, D; Carpentieri, C; Carter, A A; Carter, J R; Charlton, D G; Casse, G-L; Chilingarov, A; Cindro, V; Ciocio, A; Civera, J V; Clark, A G; Colijn, A-P; Costa, M J; Dabrowski, W; Danielsen, K M; Dawson, I; Demirkoz, B; Dervan, P; Dolezal, Z; Dorholt, O; Duerdoth, I P; Dwuznik, M; Eckert, S; Ekelöf, T; Eklund, L; Escobar, C; Fasching, D; Feld, L; Ferguson, D P S; Ferrere, D; Fortin, R; Foster, J M; Fox, H; French, R; Fromant, B P; Fujita, K; Fuster, J; Gadomski, S; Gallop, B J; Garcia, C; Garcia-Navarro, J E; Gibson, M D; Gonzalez, S; Gonzalez-Sevilla, S; Goodrick, M J; Gornicki, E; Green, C; Greenall, A; Grigson, C; Grillo, A A; Grosse-Knetter, J; Haber, C; Handa, T; Hara, K; Harper, R S; Hartjes, F G; Hashizaki, T; Hauff, D; Hessey, N P; Hill, J C; Hollins, T I; Holt, S; Horazdovsky, T; Hornung, M; Hovland, K M; Hughes, G; Huse, T; Ikegami, Y; Iwata, Y; Jackson, J N; Jakobs, K; Jared, R C; Johansen, L G; Jones, R W L; Jones, T J; de Jong, P; Joseph, J; Jovanovic, P; Kaplon, J; Kato, Y; Ketterer, C; Kindervaag, I M; Kodys, P; Koffeman, E; Kohriki, T; Kohout, Z; Kondo, T; Koperny, S; van der Kraaij, E; Kral, V; Kramberger, G; Kudlaty, J; Lacasta, C; Limper, M; Linhart, V; Llosa, G; Lozano, M; Ludwig, I; Ludwig, J; Lutz, G; Macpherson, A; McMahon, S J; Macina, D; Magrath, C A; Malecki, P; Mandic, I; Marti-Garcia, S; Matsuo, T; Meinhardt, J; Mellado, B; Mercer, I J; Mikestikova, M; Mikuz, M; Minano, M; Mistry, J; Mitsou, V; Modesto, P; Mohn, B; Molloy, S D; Moorhead, G; Moraes, A; Morgan, D; Morone, M C; Morris, J; Moser, H-G; Moszczynski, A; Muijs, A J M; Nagai, K; Nakamura, Y; Nakano, I; Nicholson, R; Niinikoski, T; Nisius, R; Ohsugi, T; O'Shea, V; Oye, O K; Parzefall, U; Pater, J R; Pernegger, H; Phillips, P W; Posisil, S; Ratoff, P N; Reznicek, P; Richardson, J D; Richter, R H; Robinson, D; Roe, S; Ruggiero, G; Runge, K; Sadrozinski, H F W; Sandaker, H; Schieck, J; Seiden, A; Shinma, S; Siegrist, J; Sloan, T; Smith, N A; Snow, S W; Solar, M; Solberg, A; Sopko, B; Sospedra, L; Spieler, H; Stanecka, E; Stapnes, S; Stastny, J; Stelzer, F; Stradling, A; Stugu, B; Takashima, R; Tanaka, R; Taylor, G; Terada, S; Thompson, R J; Titov, M; Tomeda, Y; Tovey, D R; Turala, M; Turner, P R; Tyndel, M; Ullan, M; Unno, Y; Vickey, T; Vos, M; Wallny, R; Weilhammer, P; Wells, P S; Wilson, J A; Wolter, M; Wormald, M; Wu, S L; Yamashita, T; Zontar, D; Zsenei, A

    2007-01-01

    This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the SemiConductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd supplied 92.2% of the 15,392 installed sensors, with the remainder supplied by CiS.

  20. First experimental results on active and slim-edge silicon sensors for XFEL

    International Nuclear Information System (INIS)

    Pancheri, L.; Benkechcache, M. E. A.; Betta, G.-F. Dalla; Xu, H.; Verzellesi, G.; Ronchin, S.; Boscardin, M.; Ratti, L.; Grassi, M.; Lodola, L.; Malcovati, P.; Vacchi, C.; Manghisoni, M.; Re, V.; Traversi, G.; Batignani, G.; Bettarini, S.; Casarosa, G.; Giorgi, M.; Forti, F.

    2016-01-01

    This work presents the first characterization results obtained on a pilot fabrication run of planar sensors, tailored for X-ray imaging applications at FELs, developed in the framework of INFN project PixFEL. Active and slim-edge p-on-n sensors are fabricated on n-type high-resistivity silicon with 450 μm thickness, bonded to a support wafer. Both diodes and pixelated sensors with a pitch of 110 μm are included in the design. Edge structures with different number of guard rings are designed to comply with the large bias voltage required by the application after accumulating an ionizing radiation dose as large as 1GGy. Preliminary results from the electrical characterization of the produced sensors, providing a first assessment of the proposed approach, are discussed. A functional characterization of the sensors with a pulsed infrared laser is also presented, demonstrating the validity of slim-edge configurations.

  1. Fibre optic sensors in pressurized water reactor alternators

    International Nuclear Information System (INIS)

    Favennec, J.M.; Piguet, M.

    1994-01-01

    Measurement in the electrical engine environment (alternator, transformer...) is identified as one of the two main applications of fibre optic sensors within EDF; the other application niche is the monitoring of civil works (dams, containment building of nuclear reactors...). At the EDF Research and Development Division, temperature and vibration fibre optic sensors were evaluated by the Metrology Service, since their use is under consideration for alternator monitoring. For alternator stator thermal monitoring, the BERTIN company developed a fibre optic sensor network. The optic coding technique is based on broadband source spectral modulation; the sensors are interrogated sequentially by electronic commutation. For alternator stator vibration monitoring, a fibre optic accelerometer was developed in the frame of a manufacturers and universities consortium supported by the French Research and Technology Ministry. The accelerometer is of cantilever beam type and its networking is possible by chromatic multiplexing. The Metrology Service evaluated these temperature and vibration sensors in order to verify their metrological characteristics (bias error, hysteresis, repeatability, resolution, noise, amplitude linearity, response time, frequency response, etc.) and to test their behaviour in harsh alternator environmental conditions (pressure, vibrations and temperature). Ageing and accidental condition resistance tests were also carried out. Temperature sensor test results were very satisfactory. An eight-sensor BERTIN prototype was installed on the Tricastin 1 alternator during the september 1993 nuclear station periodic stop. On the contrary, the accelerometers presented deficient metrological characteristics (shorter span than foreseen, low repeatability...). They need some improvements and could not be installed on alternators. (authors). 5 refs., 8 figs

  2. Van der Waals pressure sensors using reduced graphene oxide composites

    Science.gov (United States)

    Jung, Ju Ra; Ahn, Sung Il

    2018-04-01

    Reduced graphene oxide (RGO) films intercalated with various polymers were fabricated by reaction-based self-assembly, and their characteristics as vacuum pressure sensors based on van der Waals interactions were studied. At low temperature, the electrical resistances of the samples decrease linearly with increasing vacuum pressure, whereas at high temperature the variation of the electrical resistance shows secondary order curves. Among all samples, the poly vinyl alcohol intercalated RGO shows the highest sensitivity, being almost two times more sensitive than reference RGO. All samples show almost the same signal for repetitive sudden pressure changes, indicating reasonable reproducibility and durability.

  3. Micro-Pressure Sensors for Future Mars Missions

    Science.gov (United States)

    Catling, David C.

    1996-01-01

    The joint research interchange effort was directed at the following principal areas: u further development of NASA-Ames' Mars Micro-meteorology mission concept as a viable NASA space mission especially with regard to the science and instrument specifications u interaction with the flight team from NASA's New Millennium 'Deep-Space 2' (DS-2) mission with regard to selection and design of micro-pressure sensors for Mars u further development of micro-pressure sensors suitable for Mars The research work undertaken in the course of the Joint Research Interchange should be placed in the context of an ongoing planetary exploration objective to characterize the climate system on Mars. In particular, a network of small probes globally-distributed on the surface of the planet has often been cited as the only way to address this particular science goal. A team from NASA Ames has proposed such a mission called the Micrometeorology mission, or 'Micro-met' for short. Surface pressure data are all that are required, in principle, to calculate the Martian atmospheric circulation, provided that simultaneous orbital measurements of the atmosphere are also obtained. Consequently, in the proposed Micro-met mission a large number of landers would measure barometric pressure at various locations around Mars, each equipped with a micro-pressure sensor. Much of the time on the JRI was therefore spent working with the engineers and scientists concerned with Micro-met to develop this particular mission concept into a more realistic proposition.

  4. Pressure mapping with textile sensors for compression therapy monitoring.

    Science.gov (United States)

    Baldoli, Ilaria; Mazzocchi, Tommaso; Paoletti, Clara; Ricotti, Leonardo; Salvo, Pietro; Dini, Valentina; Laschi, Cecilia; Francesco, Fabio Di; Menciassi, Arianna

    2016-08-01

    Compression therapy is the cornerstone of treatment in the case of venous leg ulcers. The therapy outcome is strictly dependent on the pressure distribution produced by bandages along the lower limb length. To date, pressure monitoring has been carried out using sensors that present considerable drawbacks, such as single point instead of distributed sensing, no shape conformability, bulkiness and constraints on patient's movements. In this work, matrix textile sensing technologies were explored in terms of their ability to measure the sub-bandage pressure with a suitable temporal and spatial resolution. A multilayered textile matrix based on a piezoresistive sensing principle was developed, calibrated and tested with human subjects, with the aim of assessing real-time distributed pressure sensing at the skin/bandage interface. Experimental tests were carried out on three healthy volunteers, using two different bandage types, from among those most commonly used. Such tests allowed the trends of pressure distribution to be evaluated over time, both at rest and during daily life activities. Results revealed that the proposed device enables the dynamic assessment of compression mapping, with a suitable spatial and temporal resolution (20 mm and 10 Hz, respectively). In addition, the sensor is flexible and conformable, thus well accepted by the patient. Overall, this study demonstrates the adequacy of the proposed piezoresistive textile sensor for the real-time monitoring of bandage-based therapeutic treatments. © IMechE 2016.

  5. Ultrasonic level sensors for liquids under high pressure

    Science.gov (United States)

    Zuckerwar, A. J.; Mazel, D. S.; Hodges, D. Y.

    1986-01-01

    An ultrasonic level sensor of novel design continuously measures the level of a liquid subjected to a high pressure (up to about 40 MPa), as is sometimes required for the effective transfer of the liquid. The sensor operates as a composite resonator fabricated from a standard high-pressure plug. A flat-bottom hole is machined into the plug along its center line. An ultrasonic transducer is bonded rigidly to the interior surface of the bottom wall, while the exterior surface is in contact with the liquid. Although the bottom wall is designed to satisfy the pressure code, it is still sufficiently thin to permit ready excitation of the axisymmetric plate modes of vibration. The liquid level is measured by a conventional pulse-echo technique. A prototype sensor was tested successfully in a 2300-l water vessel at pressures up to about 37 MPa. A spectral analysis of the transmitted pulse reveals that the flexural, extensional, thickness-shear, and radial plate modes are excited into vibration, but none of these appears to be significantly affected by the pressurization of the liquid.

  6. Scalable Pressure Sensor Based on Electrothermally Operated Resonator

    KAUST Repository

    Hajjaj, Amal Z.; Hafiz, Md Abdullah Al; Alcheikh, Nouha; Younis, Mohammad I.

    2017-01-01

    We experimentally demonstrate a new pressure sensor that offers the flexibility of being scalable to small sizes up to the nano regime. Unlike conventional pressure sensors that rely on large diaphragms and big-surface structures, the principle of operation here relies on convective cooling of the air surrounding an electrothermally heated resonant structure, which can be a beam or a bridge. This concept is demonstrated using an electrothermally tuned and electrostatically driven MEMS resonator, which is designed to be deliberately curved. We show that the variation of pressure can be tracked accurately by monitoring the change in the resonance frequency of the resonator at a constant electrothermal voltage. We show that the range of the sensed pressure and the sensitivity of detection are controllable by the amount of the applied electrothermal voltage. Theoretically, we verify the device concept using a multi-physics nonlinear finite element model. The proposed pressure sensor is simple in principle and design and offers the possibility of further miniaturization to the nanoscale.

  7. Scalable Pressure Sensor Based on Electrothermally Operated Resonator

    KAUST Repository

    Hajjaj, Amal Z.

    2017-11-03

    We experimentally demonstrate a new pressure sensor that offers the flexibility of being scalable to small sizes up to the nano regime. Unlike conventional pressure sensors that rely on large diaphragms and big-surface structures, the principle of operation here relies on convective cooling of the air surrounding an electrothermally heated resonant structure, which can be a beam or a bridge. This concept is demonstrated using an electrothermally tuned and electrostatically driven MEMS resonator, which is designed to be deliberately curved. We show that the variation of pressure can be tracked accurately by monitoring the change in the resonance frequency of the resonator at a constant electrothermal voltage. We show that the range of the sensed pressure and the sensitivity of detection are controllable by the amount of the applied electrothermal voltage. Theoretically, we verify the device concept using a multi-physics nonlinear finite element model. The proposed pressure sensor is simple in principle and design and offers the possibility of further miniaturization to the nanoscale.

  8. Noninvasive blood pressure measurement scheme based on optical fiber sensor

    Science.gov (United States)

    Liu, Xianxuan; Yuan, Xueguang; Zhang, Yangan

    2016-10-01

    Optical fiber sensing has many advantages, such as volume small, light quality, low loss, strong in anti-jamming. Since the invention of the optical fiber sensing technology in 1977, optical fiber sensing technology has been applied in the military, national defense, aerospace, industrial, medical and other fields in recent years, and made a great contribution to parameter measurement in the environment under the limited condition .With the rapid development of computer, network system, the intelligent optical fiber sensing technology, the sensor technology, the combination of computer and communication technology , the detection, diagnosis and analysis can be automatically and efficiently completed. In this work, we proposed a noninvasive blood pressure detection and analysis scheme which uses optical fiber sensor. Optical fiber sensing system mainly includes the light source, optical fiber, optical detector, optical modulator, the signal processing module and so on. wavelength optical signals were led into the optical fiber sensor and the signals reflected by the human body surface were detected. By comparing actual testing data with the data got by traditional way to measure the blood pressure we can establish models for predicting the blood pressure and achieve noninvasive blood pressure measurement by using spectrum analysis technology. Blood pressure measurement method based on optical fiber sensing system is faster and more convenient than traditional way, and it can get accurate analysis results in a shorter period of time than before, so it can efficiently reduce the time cost and manpower cost.

  9. Development of gait segmentation methods for wearable foot pressure sensors.

    Science.gov (United States)

    Crea, S; De Rossi, S M M; Donati, M; Reberšek, P; Novak, D; Vitiello, N; Lenzi, T; Podobnik, J; Munih, M; Carrozza, M C

    2012-01-01

    We present an automated segmentation method based on the analysis of plantar pressure signals recorded from two synchronized wireless foot insoles. Given the strict limits on computational power and power consumption typical of wearable electronic components, our aim is to investigate the capability of a Hidden Markov Model machine-learning method, to detect gait phases with different levels of complexity in the processing of the wearable pressure sensors signals. Therefore three different datasets are developed: raw voltage values, calibrated sensor signals and a calibrated estimation of total ground reaction force and position of the plantar center of pressure. The method is tested on a pool of 5 healthy subjects, through a leave-one-out cross validation. The results show high classification performances achieved using estimated biomechanical variables, being on average the 96%. Calibrated signals and raw voltage values show higher delays and dispersions in phase transition detection, suggesting a lower reliability for online applications.

  10. Review on pressure sensors for structural health monitoring

    Science.gov (United States)

    Sikarwar, Samiksha; Satyendra; Singh, Shakti; Yadav, Bal Chandra

    2017-12-01

    This paper reports the state of art in a variety of pressure and the detailed study of various matrix based pressure sensors. The performances of the bridges, buildings, etc. are threatened by earthquakes, material degradations, and other environmental effects. Structural health monitoring (SHM) is crucial to protect the people and also for assets planning. This study is a contribution in developing the knowledge about self-sensing smart materials and structures for the construction industry. It deals with the study of self-sensing as well as mechanical and electrical properties of different matrices based on pressure sensors. The relationships among the compression, tensile strain, and crack length with electrical resistance change are also reviewed.

  11. Position Reconstruction and Charge Distribution in LHCb VELO Silicon Sensors

    CERN Document Server

    Versloot, TW; Akiba, K; Artuso, M; Van Beuzekom, M; Borel, J; Bowcock, TJV; Buytaert, J; Collins, P; Dumps, R; Dwyer, L; Eckstein, D; Eklund, L; Ferro-Luzzi, M; Frei, R; Gersabek M; Haefeli, G; Hennessy, K; Huse, T; Jans, E; John, M; Ketel, TJ; Keune, A; Lastoviicka, T; Mountain, R; Neufeld, N; Parkes, C; Stone, S; Szumlak, T; Tobin, M; Van Lysebetten, A; Viret, S; De Vries, H; Wang, J

    2007-01-01

    In 2006, a partially equipped LHCb VELO detector half was characterised in a test beam experiment (Alignment Challenge and Detector Commissioning, ACDC3). The position reconstruction and resolution for 2-strip R-sensor clusters was studied as a function of strip pitch and track inclination on the sensor surface. The Charge Density Distribution (CDD) is derived from the weighted charge distribution. It becomes asymmetric for tracks non-perpendicular to the strip surface. It is shown that the asymmetric broadening of the CDD around the track intercept position results in a linear eta-function at higher angles (>6 degrees). The sensor spatial resolution is determined both using a linear weighted mean of strip charges, as well as a third-order polynomial approximation via a eta-correction. The experimental results are in agreement with previous simulations. Future studies are underway to determine the angle and pitch dependent parameters which will be implemented in the LHCb VELO cluster position software tools.

  12. Piezoelectric power generation for sensor applications: design of a battery-less wireless tire pressure sensor

    Science.gov (United States)

    Makki, Noaman; Pop-Iliev, Remon

    2011-06-01

    An in-wheel wireless and battery-less piezo-powered tire pressure sensor is developed. Where conventional battery powered Tire Pressure Monitoring Systems (TPMS) are marred by the limited battery life, TPMS based on power harvesting modules provide virtually unlimited sensor life. Furthermore, the elimination of a permanent energy reservoir simplifies the overall sensor design through the exclusion of extra circuitry required to sense vehicle motion and conserve precious battery capacity during vehicle idling periods. In this paper, two design solutions are presented, 1) with very low cost highly flexible piezoceramic (PZT) bender elements bonded directly to the tire to generate power required to run the sensor and, 2) a novel rim mounted PZT harvesting unit that can be used to power pressure sensors incorporated into the valve stem requiring minimal change to the presently used sensors. While both the designs eliminate the use of environmentally unfriendly battery from the TPMS design, they offer advantages of being very low cost, service free and easily replaceable during tire repair and replacement.

  13. Experimental and numerical studies on the sensitivity of carbon fibre/silicone rubber composite sensors

    International Nuclear Information System (INIS)

    Yang, Lili; Ge, Yong; Zhu, Qinghua; Zhang, Ce; Wang, Zongpeng; Liu, Penghuan

    2012-01-01

    Flexible conductive composite sensors are of great importance for applications in structural monitoring due to their low cost, high durability and excellent compatibility. In this work, carbon fibre/silicone rubber composites were prepared and their sensitivity near the percolation threshold was investigated experimentally and theoretically. Results show that carbon fibre/silicone rubber composites have great mechanical and sensitivity even under high strain conditions. Two models based on the tunnelling effect and general effective medium theory were found to understand the sensitivity of composites with lower and higher fractions of carbon fibre. Moreover, the reversibility of the sensing performance is improved with the increase of carbon fibre addition. (paper)

  14. The silicon sensor for the compact muon solenoid tracker. Control of the fabrication process

    International Nuclear Information System (INIS)

    Manolescu, Florentina; Mihul, Alexandru; Macchiolo, Anna

    2005-01-01

    The Compact Muon Solenoid (CMS) is one of the experiments at the Large Hadron Collider (LHC) under construction at CERN. The inner tracking system of this experiment consists of the world largest Silicon Strip Tracker (SST). In total, 24,244 silicon sensors are implemented covering an area of 206 m 2 . To construct this large system and to ensure its functionality for the full lifetime of ten years under the hard LHC condition, a detailed quality assurance program has been developed. This paper describes the strategy of the Process Qualification Control to monitor the stability of the fabrication process throughout the production phase and the results obtained are shown. (authors)

  15. Transparent silicon strip sensors for the optical alignment of particle detector systems

    International Nuclear Information System (INIS)

    Blum, W.; Kroha, H.; Widmann, P.

    1995-05-01

    Modern large-area precision tracking detectors require increasing accuracy for the alignment of their components. A novel multi-point laser alignment system has been developed for such applications. The position of detector components with respect to reference laser beams is monitored by semi-transparent optical position sensors which work on the principle of silicon strip photodiodes. Two types of custom designed transparent strip sensors, based on crystalline and on amorphous silicon as active material, have been studied. The sensors are optimised for the typical diameters of collimated laser beams of 3-5 mm over distances of 10-20 m. They provide very high position resolution, on the order of 1 μm, uniformly over a wide measurement range of several centimeters. The preparation of the sensor surfaces requires special attention in order to achieve high light transmittance and minimum distortion of the traversing laser beams. At selected wavelengths, produced by laser diodes, transmission rates above 90% have been achieved. This allows to position more than 30 sensors along one laser beam. The sensors will be equipped with custom designed integrated readout electronics. (orig.)

  16. Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

    Science.gov (United States)

    Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

    2018-02-01

    We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

  17. 1 kHz 2D Visual Motion Sensor Using 20 × 20 Silicon Retina Optical Sensor and DSP Microcontroller.

    Science.gov (United States)

    Liu, Shih-Chii; Yang, MinHao; Steiner, Andreas; Moeckel, Rico; Delbruck, Tobi

    2015-04-01

    Optical flow sensors have been a long running theme in neuromorphic vision sensors which include circuits that implement the local background intensity adaptation mechanism seen in biological retinas. This paper reports a bio-inspired optical motion sensor aimed towards miniature robotic and aerial platforms. It combines a 20 × 20 continuous-time CMOS silicon retina vision sensor with a DSP microcontroller. The retina sensor has pixels that have local gain control and adapt to background lighting. The system allows the user to validate various motion algorithms without building dedicated custom solutions. Measurements are presented to show that the system can compute global 2D translational motion from complex natural scenes using one particular algorithm: the image interpolation algorithm (I2A). With this algorithm, the system can compute global translational motion vectors at a sample rate of 1 kHz, for speeds up to ±1000 pixels/s, using less than 5 k instruction cycles (12 instructions per pixel) per frame. At 1 kHz sample rate the DSP is 12% occupied with motion computation. The sensor is implemented as a 6 g PCB consuming 170 mW of power.

  18. Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

    2005-01-01

    Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

  19. Edge-TCT for the investigation of radiation damaged silicon strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Feindt, Finn

    2017-02-15

    The edge Transient Current Technique (TCT) is a method for the investigation of silicon sensors. This method requires infrared light from a sub-ns pulsed laser to be focused to a μm-size spot and scanned across the polished cut edge of a sensor. Electron-hole pairs are generated along the light beam in the sensor. These charge carriers drift in the electric field and induce transient currents on the sensor electrodes. The current transients are analyzed as a function of the applied voltage, temperature, absorbed dose and position of the laser-light focus, in order to determine the the drift velocities, electric field and the charge collection in the strip sensor. In the scope of this work, a new edge-TCT setup is commissioned, a procedure for the polishing of the cut edge is implemented and a method to position the focus of the laser light with respect to the sensor is developed. First edge-TCT measurements are performed on non-irradiated, 285 μm thick n-type strip sensors, and the pulse shape and charge collection is studied under different conditions. Furthermore, the prompt current of the transients is extracted, which is the first step towards the determination of the electric field. A new method to measure the attenuation of light in silicon is tested on a non-irradiated sensor and on sensors irradiated with up to a 1 MeV neutron equivalent fluence of 1.14 x 10{sup 15} cm{sup -2}, using laser light with a wavelength of 1052 nm.

  20. Edge-TCT for the investigation of radiation damaged silicon strip sensors

    International Nuclear Information System (INIS)

    Feindt, Finn

    2017-02-01

    The edge Transient Current Technique (TCT) is a method for the investigation of silicon sensors. This method requires infrared light from a sub-ns pulsed laser to be focused to a μm-size spot and scanned across the polished cut edge of a sensor. Electron-hole pairs are generated along the light beam in the sensor. These charge carriers drift in the electric field and induce transient currents on the sensor electrodes. The current transients are analyzed as a function of the applied voltage, temperature, absorbed dose and position of the laser-light focus, in order to determine the the drift velocities, electric field and the charge collection in the strip sensor. In the scope of this work, a new edge-TCT setup is commissioned, a procedure for the polishing of the cut edge is implemented and a method to position the focus of the laser light with respect to the sensor is developed. First edge-TCT measurements are performed on non-irradiated, 285 μm thick n-type strip sensors, and the pulse shape and charge collection is studied under different conditions. Furthermore, the prompt current of the transients is extracted, which is the first step towards the determination of the electric field. A new method to measure the attenuation of light in silicon is tested on a non-irradiated sensor and on sensors irradiated with up to a 1 MeV neutron equivalent fluence of 1.14 x 10"1"5 cm"-"2, using laser light with a wavelength of 1052 nm.

  1. Embedding Piezoresistive Pressure Sensors to Obtain Online Pressure Profiles Inside Fiber Composite Laminates

    OpenAIRE

    Kahali Moghaddam, Maryam; Breede, Arne; Brauner, Christian; Lang, Walter

    2015-01-01

    The production of large and complex parts using fiber composite materials is costly due to the frequent formation of voids, porosity and waste products. By embedding different types of sensors and monitoring the process in real time, the amount of wastage can be significantly reduced. This work focuses on developing a knowledge-based method to improve and ensure complete impregnation of the fibers before initiation of the resin cure. Piezoresistive and capacitive pressure sensors were embedde...

  2. A Miniaturized Carbon Dioxide Gas Sensor Based on Sensing of pH-Sensitive Hydrogel Swelling with a Pressure Sensor

    NARCIS (Netherlands)

    Herber, S.; Bomer, Johan G.; Olthuis, Wouter; Bergveld, Piet; van den Berg, Albert

    2005-01-01

    A measurement concept has been realized for the detection of carbon dioxide, where the CO2 induced pressure generation by an enclosed pH-sensitive hydrogel is measured with a micro pressure sensor. The application of the sensor is the quantification of the partial pressure of CO2 (Pco2) in the

  3. A Flexible Sensor Technology for the Distributed Measurement of Interaction Pressure

    Science.gov (United States)

    Donati, Marco; Vitiello, Nicola; De Rossi, Stefano Marco Maria; Lenzi, Tommaso; Crea, Simona; Persichetti, Alessandro; Giovacchini, Francesco; Koopman, Bram; Podobnik, Janez; Munih, Marko; Carrozza, Maria Chiara

    2013-01-01

    We present a sensor technology for the measure of the physical human-robot interaction pressure developed in the last years at Scuola Superiore Sant'Anna. The system is composed of flexible matrices of opto-electronic sensors covered by a soft silicone cover. This sensory system is completely modular and scalable, allowing one to cover areas of any sizes and shapes, and to measure different pressure ranges. In this work we present the main application areas for this technology. A first generation of the system was used to monitor human-robot interaction in upper- (NEUROExos; Scuola Superiore Sant'Anna) and lower-limb (LOPES; University of Twente) exoskeletons for rehabilitation. A second generation, with increased resolution and wireless connection, was used to develop a pressure-sensitive foot insole and an improved human-robot interaction measurement systems. The experimental characterization of the latter system along with its validation on three healthy subjects is presented here for the first time. A perspective on future uses and development of the technology is finally drafted. PMID:23322104

  4. Novel 3D silicon sensors for neutron detection

    International Nuclear Information System (INIS)

    Mendicino, R; Betta, G-F Dalla; Palma, M Dalla; Perillo, E; Povoli, M; Quaranta, A; Boscardin, M; Ronchin, S; Zorzi, N; Carturan, S; Cinausero, M; Gramegna, F; Marchi, T; , University of Padova, Via Marzolo 8, 35131 Padova (Italy))" data-affiliation=" (Department of Physics and Astronomy ''G.Galilei, University of Padova, Via Marzolo 8, 35131 Padova (Italy))" >Collazuol, G

    2014-01-01

    In this paper we report a novel 3D sensor structure to be used as a neutron detector in combination with an organic converter material based on polysiloxane. The first prototypes of the proposed device are presented, with emphasis on the experimental characterization. Selected results from the functional tests (with alpha particle source and pulsed laser scans) are discussed with the aid of TCAD simulations

  5. Coaxial-structured ZnO/silicon nanowires extended-gate field-effect transistor as pH sensor

    International Nuclear Information System (INIS)

    Li, Hung-Hsien; Yang, Chi-En; Kei, Chi-Chung; Su, Chung-Yi; Dai, Wei-Syuan; Tseng, Jung-Kuei; Yang, Po-Yu; Chou, Jung-Chuan; Cheng, Huang-Chung

    2013-01-01

    An extended-gate field-effect transistor (EGFET) of coaxial-structured ZnO/silicon nanowires as pH sensor was demonstrated in this paper. The oriented 1-μm-long silicon nanowires with the diameter of about 50 nm were vertically synthesized by the electroless metal deposition method at room temperature and were sequentially capped with the ZnO films using atomic layer deposition at 50 °C. The transfer characteristics (I DS –V REF ) of such ZnO/silicon nanowire EGFET sensor exhibited the sensitivity and linearity of 46.25 mV/pH and 0.9902, respectively for the different pH solutions (pH 1–pH 13). In contrast to the ZnO thin-film ones, the ZnO/silicon nanowire EGFET sensor achieved much better sensitivity and superior linearity. It was attributed to a high surface-to-volume ratio of the nanowire structures, reflecting a larger effective sensing area. The output voltage and time characteristics were also measured to indicate good reliability and durability for the ZnO/silicon nanowires sensor. Furthermore, the hysteresis was 9.74 mV after the solution was changed as pH 7 → pH 3 → pH 7 → pH 11 → pH 7. - Highlights: ► Coaxial-structured ZnO/silicon nanowire EGFET was demonstrated as pH sensor. ► EMD and ALD methods were proposed to fabricate ZnO/silicon nanowires. ► ZnO/silicon nanowire EGFET sensor achieved better sensitivity and linearity. ► ZnO/silicon nanowire EGFET sensor had good reliability and durability

  6. Optimization and validation of highly selective microfluidic integrated silicon nanowire chemical sensor

    Science.gov (United States)

    Ehfaed, Nuri. A. K. H.; Bathmanathan, Shillan A. L.; Dhahi, Th S.; Adam, Tijjani; Hashim, Uda; Noriman, N. Z.

    2017-09-01

    The study proposed characterization and optimization of silicon nanosensor for specific detection of heavy metal. The sensor was fabricated in-house and conventional photolithography coupled with size reduction via dry etching process in an oxidation furnace. Prior to heavy metal heavy metal detection, the capability to aqueous sample was determined utilizing serial DI water at various. The sensor surface was surface modified with Organofunctional alkoxysilanes (3-aminopropyl) triethoxysilane (APTES) to create molecular binding chemistry. This has allowed interaction between heavy metals being measured and the sensor component resulting in increasing the current being measured. Due to its, excellent detection capabilities, this sensor was able to identify different group heavy metal species. The device was further integrated with sub-50 µm for chemical delivery.

  7. Nanocomposite-Based Microstructured Piezoresistive Pressure Sensors for Low-Pressure Measurement Range

    Directory of Open Access Journals (Sweden)

    Vasileios Mitrakos

    2018-01-01

    Full Text Available Piezoresistive pressure sensors capable of detecting ranges of low compressive stresses have been successfully fabricated and characterised. The 5.5 × 5 × 1.6 mm3 sensors consist of a planar aluminium top electrode and a microstructured bottom electrode containing a two-by-two array of truncated pyramids with a piezoresistive composite layer sandwiched in-between. The responses of two different piezocomposite materials, a Multiwalled Carbon Nanotube (MWCNT-elastomer composite and a Quantum Tunneling Composite (QTC, have been characterised as a function of applied pressure and effective contact area. The MWCNT piezoresistive composite-based sensor was able to detect pressures as low as 200 kPa. The QTC-based sensor was capable of detecting pressures as low as 50 kPa depending on the contact area of the bottom electrode. Such sensors could find useful applications requiring the detection of small compressive loads such as those encountered in haptic sensing or robotics.

  8. Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

    CERN Document Server

    Swartz, M.; Allkofer, Y.; Bortoletto, D.; Cremaldi, L.; Cucciarelli, S.; Dorokhov, A.; Hoermann, C.; Kim, D.; Konecki, M.; Kotlinski, D.; Prokofiev, Kirill; Regenfus, Christian; Rohe, T.; Sanders, D.A.; Son, S.; Speer, T.

    2006-01-01

    We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.

  9. Piezoresistive silicon thin film sensor array for biomedical applications

    International Nuclear Information System (INIS)

    Alpuim, P.; Correia, V.; Marins, E.S.; Rocha, J.G.; Trindade, I.G.; Lanceros-Mendez, S.

    2011-01-01

    N-type hydrogenated nanocrystalline silicon thin film piezoresistors, with gauge factor - 28, were deposited on rugged and flexible polyimide foils by Hot-wire chemical vapor deposition using a tantalum filament heated to 1750 o C. The piezoresistive response under cyclic quasi-static and dynamical (up to 100 Hz) load conditions is reported. Test structures, consisting of microresistors having lateral dimensions in the range from 50 to 100 μm and thickness of 120 nm were defined in an array by reactive ion etching. Metallic pads, forming ohmic contacts to the sensing elements, were defined by a lift-off process. A readout circuit for the array consisting in a mutiplexer on each row and column of the matrix is proposed. The digital data will be processed, interpreted and stored internally by an ultra low-power micro controller, also responsible for the communication of two-way wireless data, e.g. from inside to outside the human body.

  10. Photonic porous silicon as a pH sensor.

    Science.gov (United States)

    Pace, Stephanie; Vasani, Roshan B; Zhao, Wei; Perrier, Sébastien; Voelcker, Nicolas H

    2014-01-01

    Chronic wounds do not heal within 3 months, and during the lengthy healing process, the wound is invariably exposed to bacteria, which can colonize the wound bed and form biofilms. This alters the wound metabolism and brings about a change of pH. In this work, porous silicon photonic films were coated with the pH-responsive polymer poly(2-diethylaminoethyl acrylate). We demonstrated that the pH-responsive polymer deposited on the surface of the photonic film acts as a barrier to prevent water from penetrating inside the porous matrix at neutral pH. Moreover, the device demonstrated optical pH sensing capability visible by the unaided eye.

  11. High Sensitivity, Wearable, Piezoresistive Pressure Sensors Based on Irregular Microhump Structures and Its Applications in Body Motion Sensing.

    Science.gov (United States)

    Wang, Zongrong; Wang, Shan; Zeng, Jifang; Ren, Xiaochen; Chee, Adrian J Y; Yiu, Billy Y S; Chung, Wai Choi; Yang, Yong; Yu, Alfred C H; Roberts, Robert C; Tsang, Anderson C O; Chow, Kwok Wing; Chan, Paddy K L

    2016-07-01

    A pressure sensor based on irregular microhump patterns has been proposed and developed. The devices show high sensitivity and broad operating pressure regime while comparing with regular micropattern devices. Finite element analysis (FEA) is utilized to confirm the sensing mechanism and predict the performance of the pressure sensor based on the microhump structures. Silicon carbide sandpaper is employed as the mold to develop polydimethylsiloxane (PDMS) microhump patterns with various sizes. The active layer of the piezoresistive pressure sensor is developed by spin coating PSS on top of the patterned PDMS. The devices show an averaged sensitivity as high as 851 kPa(-1) , broad operating pressure range (20 kPa), low operating power (100 nW), and fast response speed (6.7 kHz). Owing to their flexible properties, the devices are applied to human body motion sensing and radial artery pulse. These flexible high sensitivity devices show great potential in the next generation of smart sensors for robotics, real-time health monitoring, and biomedical applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

    Science.gov (United States)

    Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

    2018-03-27

    There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

  13. Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Bergauer, T.; Brondolin, E. [Institut fuer Hochenergiephysik, Vienna (Austria); and others

    2017-08-15

    The high luminosity upgrade of the Large Hadron Collider, foreseen for 2026, necessitates the replacement of the CMS experiment's silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up to Φ{sub eq} = 2 x 10{sup 16} cm{sup -2}, and an ionising dose of ∼5 MGy after an integrated luminosity of 3000 fb{sup -1}. Thin, planar silicon sensors are good candidates for this application, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. In this paper, the results obtained from the characterisation of 100 and 200 μm thick p-bulk pad diodes and strip sensors irradiated up to fluences of Φ{sub eq} = 1.3 x 10{sup 16} cm{sup -2} are shown. (orig.)

  14. Results from a first production of enhanced Silicon Sensor Test Structures produced by ITE Warsaw

    Science.gov (United States)

    Bergauer, T.; Dragicevic, M.; Frey, M.; Grabiec, P.; Grodner, M.; Hänsel, S.; Hartmann, F.; Hoffmann, K.-H.; Hrubec, J.; Krammer, M.; Kucharski, K.; Macchiolo, A.; Marczewski, J.

    2009-01-01

    Monitoring the manufacturing process of silicon sensors is essential to ensure stable quality of the produced detectors. During the CMS silicon sensor production we were utilising small Test Structures (TS) incorporated on the cut-away of the wafers to measure certain process-relevant parameters. Experience from the CMS production and quality assurance led to enhancements of these TS. Another important application of TS is the commissioning of new vendors. The measurements provide us with a good understanding of the capabilities of a vendor's process. A first batch of the new TS was produced at the Institute of Electron Technology in Warsaw Poland. We will first review the improvements to the original CMS test structures and then discuss a selection of important measurements performed on this first batch.

  15. Results from a first production of enhanced Silicon Sensor Test Structures produced by ITE Warsaw

    Energy Technology Data Exchange (ETDEWEB)

    Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Dragicevic, M. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria)], E-mail: dragicevic@oeaw.ac.at; Frey, M. [Institut fuer Experimentelle Kernphysik (IEKP), Universitaet Karlsruhe (Thailand) (Germany); Grabiec, P.; Grodner, M. [Institute of Electron Technology (ITE), Warsaw (Poland); Haensel, S. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Hartmann, F.; Hoffmann, K.-H. [Institut fuer Experimentelle Kernphysik (IEKP), Universitaet Karlsruhe (Thailand) (Germany); Hrubec, J.; Krammer, M. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Kucharski, K. [Institute of Electron Technology (ITE), Warsaw (Poland); Macchiolo, A. [Max-Planck-Institut fuer Physik (MPI), Munich (Germany); Marczewski, J. [Institute of Electron Technology (ITE), Warsaw (Poland)

    2009-01-01

    Monitoring the manufacturing process of silicon sensors is essential to ensure stable quality of the produced detectors. During the CMS silicon sensor production we were utilising small Test Structures (TS) incorporated on the cut-away of the wafers to measure certain process-relevant parameters. Experience from the CMS production and quality assurance led to enhancements of these TS. Another important application of TS is the commissioning of new vendors. The measurements provide us with a good understanding of the capabilities of a vendor's process. A first batch of the new TS was produced at the Institute of Electron Technology in Warsaw Poland. We will first review the improvements to the original CMS test structures and then discuss a selection of important measurements performed on this first batch.

  16. \\title{Development of Radiation Damage Models for Irradiated Silicon Sensors Using TCAD Tools}

    CERN Document Server

    Bhardwaj, Ashutosh; Lalwani, Kavita; Ranjan, Kirti; Printz, Martin; Ranjeet, Ranjeet; Eber, Robert; Eichhorn, Thomas; Peltola, Timo Hannu Tapani

    2014-01-01

    Abstract. During the high luminosity upgrade of the LHC (HL-LHC) the CMS tracking system will face a more intense radiation environment than the present system was designed for. In order to design radiation tolerant silicon sensors for the future CMS tracker upgrade it is fundamental to complement the measurement with device simulation. This will help in both the understanding of the device performance and in the optimization of the design parameters. One of the important ingredients of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this paper we will discuss the development of a radiation damage model by using commercial TCAD packages (Silvaco and Synopsys), which successfully reproduce the recent measurements like leakage current, depletion voltage, interstrip capacitance and interstrip resistance, and provides an insight into the performance of irradiated silicon strip sensors.

  17. Just-in-Time Correntropy Soft Sensor with Noisy Data for Industrial Silicon Content Prediction.

    Science.gov (United States)

    Chen, Kun; Liang, Yu; Gao, Zengliang; Liu, Yi

    2017-08-08

    Development of accurate data-driven quality prediction models for industrial blast furnaces encounters several challenges mainly because the collected data are nonlinear, non-Gaussian, and uneven distributed. A just-in-time correntropy-based local soft sensing approach is presented to predict the silicon content in this work. Without cumbersome efforts for outlier detection, a correntropy support vector regression (CSVR) modeling framework is proposed to deal with the soft sensor development and outlier detection simultaneously. Moreover, with a continuous updating database and a clustering strategy, a just-in-time CSVR (JCSVR) method is developed. Consequently, more accurate prediction and efficient implementations of JCSVR can be achieved. Better prediction performance of JCSVR is validated on the online silicon content prediction, compared with traditional soft sensors.

  18. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    International Nuclear Information System (INIS)

    Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

    2016-01-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  19. arXiv Signal coupling to embedded pitch adapters in silicon sensors

    CERN Document Server

    Artuso, M.; Bezshyiko, I.; Blusk, S.; Bruendler, R.; Bugiel, S.; Dasgupta, R.; Dendek, A.; Dey, B.; Ely, S.; Lionetto, F.; Petruzzo, M.; Polyakov, I.; Rudolph, M.; Schindler, H.; Steinkamp, O.; Stone, S.

    2018-01-01

    We have examined the effects of embedded pitch adapters on signal formation in n-substrate silicon microstrip sensors with data from beam tests and simulation. According to simulation, the presence of the pitch adapter metal layer changes the electric field inside the sensor, resulting in slowed signal formation on the nearby strips and a pick-up effect on the pitch adapter. This can result in an inefficiency to detect particles passing through the pitch adapter region. All these effects have been observed in the beam test data.

  20. A silicon-based electrochemical sensor for highly sensitive, specific, label-free and real-time DNA detection

    International Nuclear Information System (INIS)

    Guo, Yuanyuan; Su, Shao; Wei, Xinpan; Zhong, Yiling; Su, Yuanyuan; He, Yao; Huang, Qing; Fan, Chunhai

    2013-01-01

    We herein present a new kind of silicon-based electrochemical sensor using a gold nanoparticles-decorated silicon wafer (AuNPs@Si) as a high-performance electrode, which is facilely prepared via in situ AuNPs growth on a silicon wafer. Particularly significantly, the resultant electrochemical sensor is efficacious for label-free DNA detection with high sensitivity due to the unique merits of the prepared silicon-based electrode. Typically, DNA at remarkably low concentrations (1–10 fM) could be readily detected without requiring additional signal-amplification procedures, which is better than or comparable to the lowest DNA concentration ever detected via well-studied signal-amplification-assisted electrochemical sensors. Moreover, the silicon-based sensor features high specificity, allowing unambiguous discrimination of single-based mismatches. We further show that real-time DNA assembly is readily monitored via recording the intensity changes of current signals due to the robust thermal stability of the silicon-based electrode. The unprecedented advantages of the silicon-based electrochemical sensor would offer new opportunities for myriad sensing applications. (paper)

  1. Design and tests of the silicon sensors for the ZEUS micro vertex detector

    International Nuclear Information System (INIS)

    Dannheim, D.; Koetz, U.; Coldewey, C.; Fretwurst, E.; Garfagnini, A.; Klanner, R.; Martens, J.; Koffeman, E.; Tiecke, H.; Carlin, R.

    2003-01-01

    To fully exploit the HERA-II upgrade, the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon μ-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 μm, with five intermediate strips (20 μm strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sensors with three different geometries have been produced by Hamamatsu Photonics K.K. Irradiation tests with reactor neutrons and 60 Co photons have been performed for a small sample of sensors. The results on neutron irradiation (with a fluence of 1x10 13 1 MeV equivalent neutrons/cm 2 ) are well described by empirical formulae for bulk damage. The 60 Co photons (with doses up to 2.9 kGy) show the presence of generation currents in the SiO 2 -Si interface, a large shift of the flatband voltage and a decrease of the hole mobility

  2. Functionalization of 2D macroporous silicon under the high-pressure oxidation

    Science.gov (United States)

    Karachevtseva, L.; Kartel, M.; Kladko, V.; Gudymenko, O.; Bo, Wang; Bratus, V.; Lytvynenko, O.; Onyshchenko, V.; Stronska, O.

    2018-03-01

    Addition functionalization after high-pressure oxidation of 2D macroporous silicon structures is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO2 phase on macroporous silicon at oxide thickness of 800-1200 nm due to cylindrical symmetry of macropores and high thermal expansion coefficient of SiO2. Pb center concentration grows with the splitting energy of LO- and TO-phonons and SiO2 thickness in oxidized macroporous silicon structures. This increase EPR signal amplitude and GHz radiation absorption and is promising for development of high-frequency devices and electronically controlled elements.

  3. Balloon-borne pressure sensor performance evaluation utilizing tracking radars

    Science.gov (United States)

    Norcross, G. A.; Brooks, R. L.

    1983-01-01

    The pressure sensors on balloon-borne sondes relate the sonde measurements to height above the Earth's surface through the hypsometric equation. It is crucial that sondes used to explore the vertical structure of the atmosphere do not contribute significant height errors to their measurements of atmospheric constituent concentrations and properties. A series of radiosonde flights was conducted. In most cases, each flight consisted of two sondes attached to a single balloon and each flight was tracked by a highly accurate C-band radar. For the first 19 radiosonde flights, the standard aneroid cell baroswitch assembly used was the pressure sensor. The last 26 radiosondes were equipped with a premium grade aneroid cell baroswitch assembly sensor and with a hypsometer. It is shown that both aneroid cell baroswitch sensors become increasingly inaccurate with altitude. The hypsometer radar differences are not strongly dependent upon altitude and it is found that the standard deviation of the differences at 35 km is 0.179 km.

  4. Sensitivity of Pressure Sensors Enhanced by Doping Silver Nanowires

    Directory of Open Access Journals (Sweden)

    Baozhang Li

    2014-06-01

    Full Text Available We have developed a highly sensitive flexible pressure sensor based on a piezopolymer and silver nanowires (AgNWs composite. The composite nanofiber webs are made by electrospinning mixed solutions of poly(inylidene fluoride (PVDF and Ag NWs in a cosolvent mixture of dimethyl formamide and acetone. The diameter of the fibers ranges from 200 nm to 500 nm, as demonstrated by SEM images. FTIR and XRD results reveal that doping Ag NWs into PVDF greatly enhances the content of β phase in PVDF. This β phase increase can be attributed to interactions between the Ag NWs and the PVDF matrix, which forces the polymer chains to be embedded into the β phase crystalline. The sensitivity of the pressure sensors agrees well with the FTIR and XRD characteristics. In our experiments, the measured sensitivity reached up to 30 pC/N for the nanofiber webs containing 1.5 wt% Ag NWs, which is close to that of poly(vinylidene fluoride-trifluoroethylene [P(VDF-TrFE, (77/23]. This study may provide a new method of fabricating high performance flexible sensors at relatively low cost compared with sensors based on [P(VDF-TrFE, (77/23].

  5. Silicon telescope for prototype sensor characterisation using particle beam and cosmic rays

    CERN Multimedia

    Fu, Jinlin

    2016-01-01

    We present the design and the performance of a silicon strip telescope that we have built and recently used as reference tracking system for prototype sensor characterisation. The telescope was operated on beam at the CERN SPS and also using cosmic rays in the laboratory. We will describe the data acquisition system, based on a custom electronic board that we have developed, and the online monitoring system to control the quality of the data in real time.

  6. Pressure and Temperature Sensors Using Two Spin Crossover Materials.

    Science.gov (United States)

    Jureschi, Catalin-Maricel; Linares, Jorge; Boulmaali, Ayoub; Dahoo, Pierre Richard; Rotaru, Aurelian; Garcia, Yann

    2016-02-02

    The possibility of a new design concept for dual spin crossover based sensors for concomitant detection of both temperature and pressure is presented. It is conjectured from numerical results obtained by mean field approximation applied to a Ising-like model that using two different spin crossover compounds containing switching molecules with weak elastic interactions it is possible to simultaneously measure P and T. When the interaction parameters are optimized, the spin transition is gradual and for each spin crossover compounds, both temperature and pressure values being identified from their optical densities. This concept offers great perspectives for smart sensing devices.

  7. Pressure and Temperature Sensors Using Two Spin Crossover Materials

    Science.gov (United States)

    Jureschi, Catalin-Maricel; Linares, Jorge; Boulmaali, Ayoub; Dahoo, Pierre Richard; Rotaru, Aurelian; Garcia, Yann

    2016-01-01

    The possibility of a new design concept for dual spin crossover based sensors for concomitant detection of both temperature and pressure is presented. It is conjectured from numerical results obtained by mean field approximation applied to a Ising-like model that using two different spin crossover compounds containing switching molecules with weak elastic interactions it is possible to simultaneously measure P and T. When the interaction parameters are optimized, the spin transition is gradual and for each spin crossover compounds, both temperature and pressure values being identified from their optical densities. This concept offers great perspectives for smart sensing devices. PMID:26848663

  8. Pressure and Temperature Sensors Using Two Spin Crossover Materials

    Directory of Open Access Journals (Sweden)

    Catalin-Maricel Jureschi

    2016-02-01

    Full Text Available The possibility of a new design concept for dual spin crossover based sensors for concomitant detection of both temperature and pressure is presented. It is conjectured from numerical results obtained by mean field approximation applied to a Ising-like model that using two different spin crossover compounds containing switching molecules with weak elastic interactions it is possible to simultaneously measure P and T. When the interaction parameters are optimized, the spin transition is gradual and for each spin crossover compounds, both temperature and pressure values being identified from their optical densities. This concept offers great perspectives for smart sensing devices.

  9. Carbon nanotube—cuprous oxide composite based pressure sensors

    International Nuclear Information System (INIS)

    Karimov, Kh. S.; Chani, Muhammad Tariq Saeed; Khalid, Fazal Ahmad; Khan, Adam; Khan, Rahim

    2012-01-01

    In this paper, we present the design, the fabrication, and the experimental results of carbon nanotube (CNT) and Cu 2 O composite based pressure sensors. The pressed tablets of the CNT—Cu 2 O composite are fabricated at a pressure of 353 MPa. The diameters of the multiwalled nanotubes (MWNTs) are between 10 nm and 30 nm. The sizes of the Cu 2 O micro particles are in the range of 3–4 μm. The average diameter and the average thickness of the pressed tablets are 10 mm and 4.0 mm, respectively. In order to make low resistance electric contacts, the two sides of the pressed tablet are covered by silver pastes. The direct current resistance of the pressure sensor decreases by 3.3 times as the pressure increases up to 37 kN/m 2 . The simulation result of the resistance—pressure relationship is in good agreement with the experimental result within a variation of ±2%. (condensed matter: structural, mechanical, and thermal properties)

  10. Particle-based optical pressure sensors for 3D pressure mapping.

    Science.gov (United States)

    Banerjee, Niladri; Xie, Yan; Chalaseni, Sandeep; Mastrangelo, Carlos H

    2015-10-01

    This paper presents particle-based optical pressure sensors for in-flow pressure sensing, especially for microfluidic environments. Three generations of pressure sensitive particles have been developed- flat planar particles, particles with integrated retroreflectors and spherical microballoon particles. The first two versions suffer from pressure measurement dependence on particles orientation in 3D space and angle of interrogation. The third generation of microspherical particles with spherical symmetry solves these problems making particle-based manometry in microfluidic environment a viable and efficient methodology. Static and dynamic pressure measurements have been performed in liquid medium for long periods of time in a pressure range of atmospheric to 40 psi. Spherical particles with radius of 12 μm and balloon-wall thickness of 0.5 μm are effective for more than 5 h in this pressure range with an error of less than 5%.

  11. Fiber optic pressure sensors in skin-friction measurements

    Science.gov (United States)

    Cuomo, F. W.

    1986-01-01

    A fiber optic lever sensing technique that can be used to measure normal pressure as well as shear stresses is discussed. This method uses three unequal fibers combining small size and good sensitivity. Static measurements appear to confirm the theoretical models predicted by geometrical optics and dynamic tests performed at frequencies up to 10 kHz indicate a flat response within this frequency range. These sensors are intended for use in a low speed wind tunnel environment.

  12. Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

    Science.gov (United States)

    Maneuski, D.; Bates, R.; Blue, A.; Buttar, C.; Doonan, K.; Eklund, L.; Gimenez, E. N.; Hynds, D.; Kachkanov, S.; Kalliopuska, J.; McMullen, T.; O'Shea, V.; Tartoni, N.; Plackett, R.; Vahanen, S.; Wraight, K.

    2015-03-01

    Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.

  13. CHARACTERIZATION OF A THIN SILICON SENSOR FOR ACTIVE NEUTRON PERSONAL DOSEMETERS.

    Science.gov (United States)

    Takada, M; Nunomiya, T; Nakamura, T; Matsumoto, T; Masuda, A

    2016-09-01

    A thin silicon sensor has been developed for active neutron personal dosemeters for use by aircrews and first responders. This thin silicon sensor is not affected by the funneling effect, which causes detection of cosmic protons and over-response to cosmic neutrons. There are several advantages to the thin silicon sensor: a decrease in sensitivity to gamma rays, an improvement of the energy detection limit for neutrons down to 0.8 MeV and an increase in the sensitivity to fast neutrons. Neutron response functions were experimentally obtained using 2.5 and 5 MeV monoenergy neutron beams and a (252)Cf neutron source. Simulation results using the Monte Carlo N-Particle transport code agree quite well with the experimental ones when an energy deposition region shaped like a circular truncated cone is used in place of a cylindrical region. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  14. Quality assurance of the silicon microstrip sensors for the CBM experiment

    Energy Technology Data Exchange (ETDEWEB)

    Panasenko, Iaroslav [Physikalisches Institut, Universitaet Tuebingen (Germany); Institute for Nuclear Research, Kiev (Ukraine); Larionov, Pavel [University of Frankfurt (Germany); Collaboration: CBM-Collaboration

    2016-07-01

    The CBM experiment at FAIR will investigate the properties of nuclear matter at extreme conditions created in ultrarelativistic heavy-ion collisions. Its core detector - the Silicon Tracking System (STS) - will determine the momentum of charged particles from beam-target interactions. The track multiplicity will reach up to 700 within the detector aperture covering the polar angle 2.5 and 25 . High track density as well as stringent requirements to the momentum resolution (∝1%) require a system with high channel granularity and low material budget. The STS will be constructed of about 1200 double-sided silicon microstrip sensors with 58 μm pitch and a total area of ∝4 m{sup 2} with all together 2.1 million channels will be read out. In this talk the quality assurance of double-sided silicon microstrip sensors is discussed. This includes both visual and electrical characterization. For this purpose dedicated equipment has been set up in the clean rooms of the GSI Detector Laboratory and at Tuebingen University. Results of the electrical characterization of prototype microstrip sensors CBM06 are presented.

  15. A silicon-based flexible tactile sensor for ubiquitous robot companion applications

    International Nuclear Information System (INIS)

    Kim, Kunnyun; Lee, Kang Ryeol; Lee, Dae Sung; Cho, Nam-Kyu; Kim, Won Hyo; Park, Kwang-Bum; Park, Hyo-Derk; Kim, Yong Kook; Park, Yon-Kyu; Kim, Jong-Ho

    2006-01-01

    We present the fabrication process and characteristics of a 3-axes flexible tactile sensor available for normal and shear mode fabricated using Si micromachining and packaging technologies. The fabrication processes for the 3 axes flexible tactile sensor were classified in the fabrication of sensor chips and their packaging on the flexible PCB. The variation rate of resistance was about 2.1%/N and 0.5%/N in applying normal and shear force, respectively. Because this tactile sensor can measure the variations of resistance of the semiconductor strain gauge for normal and shear force, it can be used to sense touch, pressure, hardness, and slip

  16. Amorphous silicon-based PINIP structure for color sensor

    International Nuclear Information System (INIS)

    Zhang, S.; Raniero, L.; Fortunato, E.; Ferreira, I.; Aguas, H.; Martins, R.

    2005-01-01

    A series of hydrogenated amorphous silicon carbide (a-SiC:H) films was prepared by plasma enhanced chemical vapor deposition (PECVD) technology. The microstructure and photoelectronic properties of the film are investigated by absorption spectra (in the ultraviolet to near-infrared range) and Fourier transform infrared (FTIR) spectra. The results show that good band gap controllability (1.83-3.64 eV) was achieved by adjusting the plasma parameters. In the energy range around 2.1 eV, the a-Si 1-x C x :H films exhibit good photosensitivity, opening the possibility to use this wide band gap material for device application, especially when blue color detectors are concerned. A multilayer device with a stack of glass/TCO(ZnO:Ga)/P(a-SiC:H)/I(a-SiC:H)/N(a-Si:H)/I(a-Si:H)/P(a-Si:H)/Al has been prepared. The devices can detect blue and red colors under different bias voltages. The optimization of the device, especially the film thickness and the band gap offset used to achieve better detectivity, is also done in this work

  17. Silicon Sensor Development for the CMS Tracker Upgrade

    CERN Document Server

    Auzinger, Georg; Elliott-Peisert, Anna

    The Large Hadron Collider at the European Council for Nuclear Research in Geneva is scheduled to undergo a major luminosity upgrade after its lifetime of ten years of operation around the year 2020, to maximize its scientific discovery potential. The total integrated luminosity will be increased by a factor of ten, which will dramatically change the conditions under which the four large detectors at the LHC will have to operate. The Compact Muon Solenoid, which has contributed to the recent discovery of a new, Higgs-like boson is one of them. Its innermost part -- the so-called tracker -- is a high-precision instrument that measures the created particles' trajectories by means of silicon detectors. With a total surface of more than 200 square-meters it is the largest device of its kind ever built. The increase in instantaneous luminosity in the upgraded LHC will lead to a dramatically increased track density at the interaction points of the colliding beams and thus also to a much more hostile radiation env...

  18. X-ray imaging characterization of active edge silicon pixel sensors

    International Nuclear Information System (INIS)

    Ponchut, C; Ruat, M; Kalliopuska, J

    2014-01-01

    The aim of this work was the experimental characterization of edge effects in active-edge silicon pixel sensors, in the frame of X-ray pixel detectors developments for synchrotron experiments. We produced a set of active edge pixel sensors with 300 to 500 μm thickness, edge widths ranging from 100 μm to 150 μm, and n or p pixel contact types. The sensors with 256 × 256 pixels and 55 × 55 μm 2 pixel pitch were then bump-bonded to Timepix readout chips for X-ray imaging measurements. The reduced edge widths makes the edge pixels more sensitive to the electrical field distribution at the sensor boundaries. We characterized this effect by mapping the spatial response of the sensor edges with a finely focused X-ray synchrotron beam. One of the samples showed a distortion-free response on all four edges, whereas others showed variable degrees of distortions extending at maximum to 300 micron from the sensor edge. An application of active edge pixel sensors to coherent diffraction imaging with synchrotron beams is described

  19. Modeling of an Aged Porous Silicon Humidity Sensor Using ANN Technique

    Directory of Open Access Journals (Sweden)

    Tarikul ISLAM

    2006-10-01

    Full Text Available Porous silicon (PS sensor based on capacitive technique used for measuring relative humidity has the advantages of low cost, ease of fabrication with controlled structure and CMOS compatibility. But the response of the sensor is nonlinear function of humidity and suffers from errors due to aging and stability. One adaptive linear (ADALINE ANN model has been developed to model the behavior of the sensor with a view to estimate these errors and compensate them. The response of the sensor is represented by third order polynomial basis function whose coefficients are determined by the ANN technique. The drift in sensor output due to aging of PS layer is also modeled by adapting the weights of the polynomial function. ANN based modeling is found to be more suitable than conventional physical modeling of PS humidity sensor in changing environment and drift due to aging. It helps online estimation of nonlinearity as well as monitoring of the fault of the PS humidity sensor using the coefficients of the model.

  20. High Resolution and Large Dynamic Range Resonant Pressure Sensor Based on Q-Factor Measurement

    Science.gov (United States)

    Gutierrez, Roman C. (Inventor); Stell, Christopher B. (Inventor); Tang, Tony K. (Inventor); Vorperian, Vatche (Inventor); Wilcox, Jaroslava (Inventor); Shcheglov, Kirill (Inventor); Kaiser, William J. (Inventor)

    2000-01-01

    A pressure sensor has a high degree of accuracy over a wide range of pressures. Using a pressure sensor relying upon resonant oscillations to determine pressure, a driving circuit drives such a pressure sensor at resonance and tracks resonant frequency and amplitude shifts with changes in pressure. Pressure changes affect the Q-factor of the resonating portion of the pressure sensor. Such Q-factor changes are detected by the driving/sensing circuit which in turn tracks the changes in resonant frequency to maintain the pressure sensor at resonance. Changes in the Q-factor are reflected in changes of amplitude of the resonating pressure sensor. In response, upon sensing the changes in the amplitude, the driving circuit changes the force or strength of the electrostatic driving signal to maintain the resonator at constant amplitude. The amplitude of the driving signals become a direct measure of the changes in pressure as the operating characteristics of the resonator give rise to a linear response curve for the amplitude of the driving signal. Pressure change resolution is on the order of 10(exp -6) torr over a range spanning from 7,600 torr to 10(exp -6) torr. No temperature compensation for the pressure sensor of the present invention is foreseen. Power requirements for the pressure sensor are generally minimal due to the low-loss mechanical design of the resonating pressure sensor and the simple control electronics.

  1. Pressure and Temperature Spin Crossover Sensors with Optical Detection

    Science.gov (United States)

    Linares, Jorge; Codjovi, Epiphane; Garcia, Yann

    2012-01-01

    Iron(II) spin crossover molecular materials are made of coordination centres switchable between two states by temperature, pressure or a visible light irradiation. The relevant macroscopic parameter which monitors the magnetic state of a given solid is the high-spin (HS) fraction denoted nHS, i.e., the relative population of HS molecules. Each spin crossover material is distinguished by a transition temperature T1/2 where 50% of active molecules have switched to the low-spin (LS) state. In strongly interacting systems, the thermal spin switching occurs abruptly at T1/2. Applying pressure induces a shift from HS to LS states, which is the direct consequence of the lower volume for the LS molecule. Each material has thus a well defined pressure value P1/2. In both cases the spin state change is easily detectable by optical means thanks to a thermo/piezochromic effect that is often encountered in these materials. In this contribution, we discuss potential use of spin crossover molecular materials as temperature and pressure sensors with optical detection. The ones presenting smooth transitions behaviour, which have not been seriously considered for any application, are spotlighted as potential sensors which should stimulate a large interest on this well investigated class of materials. PMID:22666041

  2. Suburothelial Bladder Contraction Detection with Implanted Pressure Sensor.

    Directory of Open Access Journals (Sweden)

    Steve J A Majerus

    Full Text Available Managing bladder pressure in patients with neurogenic bladders is needed to improve rehabilitation options, avoid upper tract damage, incontinence, and their associated co-morbidities and mortality. Current methods of determining bladder contractions are not amenable to chronic or ambulatory settings. In this study we evaluated detection of bladder contractions using a novel piezoelectric catheter-free pressure sensor placed in a suburothelial bladder location in animals.Wired prototypes of the pressure monitor were implanted into 2 nonsurvival (feline and canine and one 13-day survival (canine animal. Vesical pressures were obtained from the device in both suburothelial and intraluminal locations and simultaneously from a pressure sensing catheter in the bladder. Intravesical pressure was monitored in the survival animal over 10 days from the suburothelial location and necropsy was performed to assess migration and erosion.In the nonsurvival animals, the average correlation between device and reference catheter data was high during both electrically stimulated bladder contractions and manual compressions (r = 0.93±0.03, r = 0.89±0.03. Measured pressures correlated strongly (r = 0.98±0.02 when the device was placed in the bladder lumen. The survival animal initially recorded physiologic data, but later this deteriorated. However, endstage intraluminal device recordings correlated (r = 0.85±0.13 with the pressure catheter. Significant erosion of the implant through the detrusor was found.This study confirms correlation between suburothelial pressure readings and intravesical bladder pressures. Due to device erosion during ambulatory studies, a wireless implant is recommended for clinical rehabilitation applications.

  3. Visual Sensor for Sterilization of Polymer Fixtures Using Embedded Mesoporous Silicon Photonic Crystals.

    Science.gov (United States)

    Kumeria, Tushar; Wang, Joanna; Chan, Nicole; Harris, Todd J; Sailor, Michael J

    2018-01-26

    A porous photonic crystal is integrated with a plastic medical fixture (IV connector hub) to provide a visual colorimetric sensor to indicate the presence or absence of alcohol used to sterilize the fixture. The photonic crystal is prepared in porous silicon (pSi) by electrochemical anodization of single crystal silicon, and the porosity and the stop band of the material is engineered such that the integrated device visibly changes color (green to red or blue to green) when infiltrated with alcohol. Two types of self-reporting devices are prepared and their performance compared: the first type involves heat-assisted fusion of a freestanding pSi photonic crystal to the connector end of a preformed polycarbonate hub, forming a composite where the unfilled portion of the pSi film acts as the sensor; the second involves generation of an all-polymer replica of the pSi photonic crystal by complete thermal infiltration of the pSi film and subsequent chemical dissolution of the pSi portion. Both types of sensors visibly change color when wetted with alcohol, and the color reverts to the original upon evaporation of the liquid. The sensor performance is verified using E. coli-infected samples.

  4. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    International Nuclear Information System (INIS)

    Duun, Sune; Haahr, Rasmus G; Hansen, Ole; Birkelund, Karen; Thomsen, Erik V

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized for minimizing the optical power needed in reflectance pulse oximetry. To simplify packaging, backside photodiodes are made which are compatible with assembly using surface mounting technology without pre-packaging. Quantum efficiencies up to 95% and area-specific noise equivalent powers down to 30 fW Hz -1/2 cm -1 are achieved. The photodiodes are incorporated into a wireless pulse oximetry sensor system embedded in an adhesive patch presented elsewhere as 'The Electronic Patch'. The annular photodiodes are fabricated using two masked diffusions of first boron and subsequently phosphor. The surface is passivated with a layer of silicon nitride also serving as an optical filter. As the final process, after metallization, a hole in the center of the photodiode is etched using deep reactive ion etch.

  5. Characterization of silicon sensor materials and designs for the CMS Tracker Upgrade

    CERN Document Server

    Dierlamm, Alexander Hermann

    2012-01-01

    During the high luminosity phase of the LHC (HL-LHC, starting around 2020) the inner tracking system of CMS will be exposed to harsher conditions than the current system was designed for. Therefore a new tracker is planned to cope with higher radiation levels and higher occupancies. Within the strip sensor developments of CMS a comparative survey of silicon materials and technologies is being performed in order to identify the baseline material for the future tracker. Hence, a variety of materials (float-zone, magnetic Czochralski and epitaxially grown silicon with thicknesses from 50$\\mu$m to 320$\\mu$m as p- and n-type) has been processed at one company (Hamamatsu Photonics K.K.), irradiated (proton, neutron and mixed irradiations up to 1.5e15n$_{eq}$/cm$^2$ and beyond) and tested under identical conditions. The wafer layout includes a variety of devices to investigate different aspects of sensor properties like simple diodes, test-structures, small strip sensors and a strip sensor array with varying strip p...

  6. Programmable assembly of pressure sensors using pattern-forming bacteria.

    Science.gov (United States)

    Cao, Yangxiaolu; Feng, Yaying; Ryser, Marc D; Zhu, Kui; Herschlag, Gregory; Cao, Changyong; Marusak, Katherine; Zauscher, Stefan; You, Lingchong

    2017-11-01

    Biological systems can generate microstructured materials that combine organic and inorganic components and possess diverse physical and chemical properties. However, these natural processes in materials fabrication are not readily programmable. Here, we use a synthetic-biology approach to assemble patterned materials. We demonstrate programmable fabrication of three-dimensional (3D) materials by printing engineered self-patterning bacteria on permeable membranes that serve as a structural scaffold. Application of gold nanoparticles to the colonies creates hybrid organic-inorganic dome structures. The dynamics of the dome structures' response to pressure is determined by their geometry (colony size, dome height, and pattern), which is easily modified by varying the properties of the membrane (e.g., pore size and hydrophobicity). We generate resettable pressure sensors that process signals in response to varying pressure intensity and duration.

  7. Radiosonde pressure sensor performance - Evaluation using tracking radars

    Science.gov (United States)

    Parsons, C. L.; Norcross, G. A.; Brooks, R. L.

    1984-01-01

    The standard balloon-borne radiosonde employed for synoptic meteorology provides vertical profiles of temperature, pressure, and humidity as a function of elapsed time. These parameters are used in the hypsometric equation to calculate the geopotential altitude at each sampling point during the balloon's flight. It is important that the vertical location information be accurate. The present investigation was conducted with the objective to evaluate the altitude determination accuracy of the standard radiosonde throughout the entire balloon profile. The tests included two other commercially available pressure sensors to see if they could provide improved accuracy in the stratosphere. The pressure-measuring performance of standard baroswitches, premium baroswitches, and hypsometers in balloon-borne sondes was correlated with tracking radars. It was found that the standard and premium baroswitches perform well up to about 25 km altitude, while hypsometers provide more reliable data above 25 km.

  8. Dynamic tire pressure sensor for measuring ground vibration.

    Science.gov (United States)

    Wang, Qi; McDaniel, James Gregory; Wang, Ming L

    2012-11-07

    This work presents a convenient and non-contact acoustic sensing approach for measuring ground vibration. This approach, which uses an instantaneous dynamic tire pressure sensor (DTPS), possesses the capability to replace the accelerometer or directional microphone currently being used for inspecting pavement conditions. By measuring dynamic pressure changes inside the tire, ground vibration can be amplified and isolated from environmental noise. In this work, verifications of the DTPS concept of sensing inside the tire have been carried out. In addition, comparisons between a DTPS, ground-mounted accelerometer, and directional microphone are made. A data analysis algorithm has been developed and optimized to reconstruct ground acceleration from DTPS data. Numerical and experimental studies of this DTPS reveal a strong potential for measuring ground vibration caused by a moving vehicle. A calibration of transfer function between dynamic tire pressure change and ground acceleration may be needed for different tire system or for more accurate application.

  9. Real-Time and In-Flow Sensing Using a High Sensitivity Porous Silicon Microcavity-Based Sensor

    Directory of Open Access Journals (Sweden)

    Raffaele Caroselli

    2017-12-01

    Full Text Available Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU, which allowed us to directly detect refractive index variations in the 10−7 RIU range.

  10. Real-Time and In-Flow Sensing Using a High Sensitivity Porous Silicon Microcavity-Based Sensor.

    Science.gov (United States)

    Caroselli, Raffaele; Martín Sánchez, David; Ponce Alcántara, Salvador; Prats Quilez, Francisco; Torrijos Morán, Luis; García-Rupérez, Jaime

    2017-12-05

    Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU), which allowed us to directly detect refractive index variations in the 10 -7 RIU range.

  11. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

    Directory of Open Access Journals (Sweden)

    Sangchoel Kim

    2013-10-01

    Full Text Available We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5 layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

  12. First characterization of the SPADnet sensor: a digital silicon photomultiplier for PET applications

    Science.gov (United States)

    Gros-Daillon, E.; Maingault, L.; André, L.; Reboud, V.; Verger, L.; Charbon, E.; Bruschini, C.; Veerappan, C.; Stoppa, D.; Massari, N.; Perenzoni, M.; Braga, L. H. C.; Gasparini, L.; Henderson, R. K.; Walker, R.; East, S.; Grant, L.; Jatekos, B.; Lorincz, E.; Ujhelyi, F.; Erdei, G.; Major, P.; Papp, Z.; Nemeth, G.

    2013-12-01

    Silicon Photomultipliers have the ability to replace photomultiplier tubes when used as light sensors in scintillation gamma-ray detectors. Their timing properties, compactness, and magnetic field compatibility make them interesting for use in Time-of-Flight Magnetic Resonance Imaging compatible Positron Emission Tomography. In this paper, we present a new fully digital Single Photon Avalanche Diode (SPAD) based detector fabricated in CMOS image sensor technology. It contains 16x8 pixels with a pitch of 610x571.2 μm2. The Dark Count Rate and the Photon Detection Probability of each SPAD has been measured and the homogeneity of these parameters in the entire 92000 SPAD array is shown. The sensor has been optically coupled to a single LYSO needle and a LYSO array. The scintillator crystal was irradiated with several gamma sources and the resulting images and energy spectra are presented.

  13. Therapeutic hypertension system based on a microbreathing pressure sensor system

    Directory of Open Access Journals (Sweden)

    Diao Z

    2011-05-01

    Full Text Available Ziji Diao1, Hongying Liu1, Lan Zhu1, Xiaoqiang Gao1, Suwen Zhao1, Xitian Pi1,2, Xiaolin Zheng1,21Key Laboratory of Biorheological Science and Technology, Chongqing University, Ministry of Education, Chongqing; 2Key Laboratories for National Defense Science and Technology of Innovative Micronano Devices and System Technology, Chongqing, People’s Republic of ChinaBackground and methods: A novel therapeutic system for the treatment of hypertension was developed on the basis of a slow-breath training mechanism, using a microbreathing pressure sensor device for the detection of human respiratory signals attached to the abdomen. The system utilizes a single-chip AT89C51 microcomputer as a core processor, programmed by Microsoft Visual C++6.0 to communicate with a PC via a full-speed PDIUSBD12 interface chip. The programming is based on a slow-breath guided algorithm in which the respiratory signal serves as a physiological feedback parameter. Inhalation and exhalation by the subject is guided by music signals.Results and conclusion: Our study indicates that this microbreathing sensor system may assist in slow-breath training and may help to decrease blood pressure.Keywords: hypertension, microbreathing sensor, single-chip microcomputer, slow-pace breathing

  14. Cooperative Opportunistic Pressure Based Routing for Underwater Wireless Sensor Networks

    Directory of Open Access Journals (Sweden)

    Nadeem Javaid

    2017-03-01

    Full Text Available In this paper, three opportunistic pressure based routing techniques for underwater wireless sensor networks (UWSNs are proposed. The first one is the cooperative opportunistic pressure based routing protocol (Co-Hydrocast, second technique is the improved Hydrocast (improved-Hydrocast, and third one is the cooperative improved Hydrocast (Co-improved Hydrocast. In order to minimize lengthy routing paths between the source and the destination and to avoid void holes at the sparse networks, sensor nodes are deployed at different strategic locations. The deployment of sensor nodes at strategic locations assure the maximum monitoring of the network field. To conserve the energy consumption and minimize the number of hops, greedy algorithm is used to transmit data packets from the source to the destination. Moreover, the opportunistic routing is also exploited to avoid void regions by making backward transmissions to find reliable path towards the destination in the network. The relay cooperation mechanism is used for reliable data packet delivery, when signal to noise ratio (SNR of the received signal is not within the predefined threshold then the maximal ratio combining (MRC is used as a diversity technique to improve the SNR of the received signals at the destination. Extensive simulations validate that our schemes perform better in terms of packet delivery ratio and energy consumption than the existing technique; Hydrocast.

  15. Cooperative Opportunistic Pressure Based Routing for Underwater Wireless Sensor Networks.

    Science.gov (United States)

    Javaid, Nadeem; Muhammad; Sher, Arshad; Abdul, Wadood; Niaz, Iftikhar Azim; Almogren, Ahmad; Alamri, Atif

    2017-03-19

    In this paper, three opportunistic pressure based routing techniques for underwater wireless sensor networks (UWSNs) are proposed. The first one is the cooperative opportunistic pressure based routing protocol (Co-Hydrocast), second technique is the improved Hydrocast (improved-Hydrocast), and third one is the cooperative improved Hydrocast (Co-improved Hydrocast). In order to minimize lengthy routing paths between the source and the destination and to avoid void holes at the sparse networks, sensor nodes are deployed at different strategic locations. The deployment of sensor nodes at strategic locations assure the maximum monitoring of the network field. To conserve the energy consumption and minimize the number of hops, greedy algorithm is used to transmit data packets from the source to the destination. Moreover, the opportunistic routing is also exploited to avoid void regions by making backward transmissions to find reliable path towards the destination in the network. The relay cooperation mechanism is used for reliable data packet delivery, when signal to noise ratio (SNR) of the received signal is not within the predefined threshold then the maximal ratio combining (MRC) is used as a diversity technique to improve the SNR of the received signals at the destination. Extensive simulations validate that our schemes perform better in terms of packet delivery ratio and energy consumption than the existing technique; Hydrocast.

  16. Characterization of silicon microstrip sensors with a pulsed infrared laser system for the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Pradeep [Goethe Univ., Frankfurt (Germany); GSI (Germany); Eschke, Juergen [GSI (Germany); FAIR (Germany); Collaboration: CBM-Collaboration

    2014-07-01

    The Silicon Tracking System (STS) for the Compressed Baryonic Matter (CBM) experiment at FAIR will comprise more than 1200 double-sided silicon microstrip sensors. For the quality assurance of the prototype sensors a laser test system has been built up. The aim of the sensor scans with the pulsed infrared laser system is to determine the charge sharing between strips and to measure the uniformity of the sensor response over the whole active area. The laser system measures the sensor response in an automatized procedure at several thousand positions across the sensor with focused infrared laser light (σ∼15 μm, λ=1060 nm). The duration (5 ns) and power (few mW) of the laser pulses are selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24k electrons, which is similar to the charge created by minimum ionizing particles in these sensors. Results from the characterization of monolithic active pixel sensors, to understand the spot-size of the laser, and laser scans for different sensors are presented.

  17. Method of purifying metallurgical grade silicon employing reduced pressure atmospheric control

    Science.gov (United States)

    Ingle, W. M.; Thompson, S. W.; Chaney, R. E. (Inventor)

    1979-01-01

    A method in which a quartz tube is charged with chunks of metallurgical grade silicon and/or a mixture of such chunks and high purity quartz sand, and impurities from a class including aluminum, boron, as well as certain transition metals including nickel, iron, and manganese is described. The tube is then evacuated and heated to a temperature within a range of 800 C to 1400 C. A stream of gas comprising a reactant, such as silicon tetrafluoride, is continuously delivered at low pressures through the charge for causing a metathetical reaction of impurities of the silicon and the reactant to occur for forming a volatile halide and leaving a residue of silicon of an improved purity. The reactant which included carbon monoxide gas and impurities such as iron and nickel react to form volatile carbonyls.

  18. Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

    Science.gov (United States)

    Sung, Yu-Ching; Wei, Ta-Chin; Liu, You-Chia; Huang, Chun

    2018-06-01

    A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet is used for etching. An argon carrier gas is supplied to the plasma discharge jet; and CH2F2 etch gas is inserted into the plasma discharge jet, near the silicon substrate. Silicon etchings rate can be efficiently-controlled by adjusting the feeding etching gas composition and plasma jet operating parameters. The features of silicon etched by the plasma discharge jet are discussed in order to spatially spreading plasma species. Electronic excitation temperature and electron density are detected by increasing plasma power. The etched silicon profile exhibited an anisotropic shape and the etching rate was maximum at the total gas flow rate of 4500 sccm and CH2F2 concentration of 11.1%. An etching rate of 17 µm/min was obtained at a plasma power of 100 W.

  19. Impact of low-dose electron irradiation on n{sup +}p silicon strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2015-12-11

    The response of n{sup +}p silicon strip sensors to electrons from a {sup 90}Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of the n{sup +} strips were studied. The electrons from the {sup 90}Sr source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO{sub 2} at the maximum was about 50 Gy(SiO{sub 2})/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 °C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO{sub 2} by the radiation from the β source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n{sup +}p strip sensors is discussed.

  20. A Temperature Sensor using a Silicon-on-Insulator (SOI) Timer for Very Wide Temperature Measurement

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad; Elbuluk, Malik; Culley, Dennis E.

    2008-01-01

    A temperature sensor based on a commercial-off-the-shelf (COTS) Silicon-on-Insulator (SOI) Timer was designed for extreme temperature applications. The sensor can operate under a wide temperature range from hot jet engine compartments to cryogenic space exploration missions. For example, in Jet Engine Distributed Control Architecture, the sensor must be able to operate at temperatures exceeding 150 C. For space missions, extremely low cryogenic temperatures need to be measured. The output of the sensor, which consisted of a stream of digitized pulses whose period was proportional to the sensed temperature, can be interfaced with a controller or a computer. The data acquisition system would then give a direct readout of the temperature through the use of a look-up table, a built-in algorithm, or a mathematical model. Because of the wide range of temperature measurement and because the sensor is made of carefully selected COTS parts, this work is directly applicable to the NASA Fundamental Aeronautics/Subsonic Fixed Wing Program--Jet Engine Distributed Engine Control Task and to the NASA Electronic Parts and Packaging (NEPP) Program. In the past, a temperature sensor was designed and built using an SOI operational amplifier, and a report was issued. This work used an SOI 555 timer as its core and is completely new work.

  1. Assessing Walking Strategies Using Insole Pressure Sensors for Stroke Survivors.

    Science.gov (United States)

    Munoz-Organero, Mario; Parker, Jack; Powell, Lauren; Mawson, Susan

    2016-10-01

    Insole pressure sensors capture the different forces exercised over the different parts of the sole when performing tasks standing up such as walking. Using data analysis and machine learning techniques, common patterns and strategies from different users to achieve different tasks can be automatically extracted. In this paper, we present the results obtained for the automatic detection of different strategies used by stroke survivors when walking as integrated into an Information Communication Technology (ICT) enhanced Personalised Self-Management Rehabilitation System (PSMrS) for stroke rehabilitation. Fourteen stroke survivors and 10 healthy controls have participated in the experiment by walking six times a distance from chair to chair of approximately 10 m long. The Rivermead Mobility Index was used to assess the functional ability of each individual in the stroke survivor group. Several walking strategies are studied based on data gathered from insole pressure sensors and patterns found in stroke survivor patients are compared with average patterns found in healthy control users. A mechanism to automatically estimate a mobility index based on the similarity of the pressure patterns to a stereotyped stride is also used. Both data gathered from stroke survivors and healthy controls are used to evaluate the proposed mechanisms. The output of trained algorithms is applied to the PSMrS system to provide feedback on gait quality enabling stroke survivors to self-manage their rehabilitation.

  2. Assessing Walking Strategies Using Insole Pressure Sensors for Stroke Survivors

    Directory of Open Access Journals (Sweden)

    Mario Munoz-Organero

    2016-10-01

    Full Text Available Insole pressure sensors capture the different forces exercised over the different parts of the sole when performing tasks standing up such as walking. Using data analysis and machine learning techniques, common patterns and strategies from different users to achieve different tasks can be automatically extracted. In this paper, we present the results obtained for the automatic detection of different strategies used by stroke survivors when walking as integrated into an Information Communication Technology (ICT enhanced Personalised Self-Management Rehabilitation System (PSMrS for stroke rehabilitation. Fourteen stroke survivors and 10 healthy controls have participated in the experiment by walking six times a distance from chair to chair of approximately 10 m long. The Rivermead Mobility Index was used to assess the functional ability of each individual in the stroke survivor group. Several walking strategies are studied based on data gathered from insole pressure sensors and patterns found in stroke survivor patients are compared with average patterns found in healthy control users. A mechanism to automatically estimate a mobility index based on the similarity of the pressure patterns to a stereotyped stride is also used. Both data gathered from stroke survivors and healthy controls are used to evaluate the proposed mechanisms. The output of trained algorithms is applied to the PSMrS system to provide feedback on gait quality enabling stroke survivors to self-manage their rehabilitation.

  3. Fabrication and characterization of magnetic composite membrane pressure sensor

    KAUST Repository

    Khan, Mohammed Asadullah

    2016-04-20

    This paper describes a magnetic field powered pressure sensor, which comprises a coil array and a magnetic composite membrane. The composite membrane is made by embedding a ribbon of the amorphous soft magnetic alloy Vitrovac®, in a 17 mm x 25 mm x 1.5 mm Polydimethylsiloxane (PDMS) layer. PDMS is chosen for its low Young\\'s modulus and the amorphous alloy for its high permeability. The membrane is suspended 1.5 mm above a 17x19 array of microfabricated planar coils. The coils are fabricated by patterning a 620 nm thick gold layer. Each coil occupies an area of 36000 μm2 and consists of 14 turns. The sensor is tested by subjecting it to pressure and simultaneously exciting it by a 24 A/m, 100 kHz magnetic field. A pressure change from 0 kPa to 5.1 kPa, results in a 5400 ppm change in the voltage output.

  4. Fabrication and characterization of magnetic composite membrane pressure sensor

    KAUST Repository

    Khan, Mohammed Asadullah; Alfadhel, Ahmed; Kosel, Jü rgen; Bakolka, M.

    2016-01-01

    This paper describes a magnetic field powered pressure sensor, which comprises a coil array and a magnetic composite membrane. The composite membrane is made by embedding a ribbon of the amorphous soft magnetic alloy Vitrovac®, in a 17 mm x 25 mm x 1.5 mm Polydimethylsiloxane (PDMS) layer. PDMS is chosen for its low Young's modulus and the amorphous alloy for its high permeability. The membrane is suspended 1.5 mm above a 17x19 array of microfabricated planar coils. The coils are fabricated by patterning a 620 nm thick gold layer. Each coil occupies an area of 36000 μm2 and consists of 14 turns. The sensor is tested by subjecting it to pressure and simultaneously exciting it by a 24 A/m, 100 kHz magnetic field. A pressure change from 0 kPa to 5.1 kPa, results in a 5400 ppm change in the voltage output.

  5. Numerical investigation of magnetic field effect on pressure in cylindrical and hemispherical silicon CZ crystal growth

    International Nuclear Information System (INIS)

    Mokhtari, F.; Bouabdallah, A.; Merah, A.; Oualli, H.

    2012-01-01

    The effect of axial magnetic field of different intensities on pressure in silicon Czochralski crystal growth is investigated in cylindrical and hemispherical geometries with rotating crystal and crucible and thermocapillary convection. As one important thermodynamic variable, the pressure is found to be more sensitive than temperature to magnetic field with strong dependence upon the vorticity field. The pressure at the triple point is proposed as a convenient parameter to control the homogeneity of the grown crystal. With a gradual increase of the magnetic field intensity the convection effect can be reduced without thermal fluctuations in the silicon melt. An evaluation of the magnetic interaction parameter critical value corresponding to flow, pressure and temperature homogenization leads to the important result that a relatively low axial magnetic field is required for the spherical system comparatively to the cylindrical one. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Numerical investigation of magnetic field effect on pressure in cylindrical and hemispherical silicon CZ crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, F. [Universite Mouloud Mammeri de Tizi Ouzou (Algeria); LTSE Laboratory, University of Science and Technology. BP 32 Elalia, Babezzouar, Algiers (Algeria); Bouabdallah, A. [LTSE Laboratory, University of Science and Technology. BP 32 Elalia, Babezzouar, Algiers (Algeria); Merah, A. [LTSE Laboratory, University of Science and Technology. BP 32 Elalia, Babezzouar, Algiers (Algeria); M' hamed Bougara University, Boumerdes (Algeria); Oualli, H. [EMP, Bordj ElBahri, Algiers (Algeria)

    2012-12-15

    The effect of axial magnetic field of different intensities on pressure in silicon Czochralski crystal growth is investigated in cylindrical and hemispherical geometries with rotating crystal and crucible and thermocapillary convection. As one important thermodynamic variable, the pressure is found to be more sensitive than temperature to magnetic field with strong dependence upon the vorticity field. The pressure at the triple point is proposed as a convenient parameter to control the homogeneity of the grown crystal. With a gradual increase of the magnetic field intensity the convection effect can be reduced without thermal fluctuations in the silicon melt. An evaluation of the magnetic interaction parameter critical value corresponding to flow, pressure and temperature homogenization leads to the important result that a relatively low axial magnetic field is required for the spherical system comparatively to the cylindrical one. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. A family of fiber-optic based pressure sensors for intracochlear measurements

    Science.gov (United States)

    Olson, Elizabeth S.; Nakajima, Hideko H.

    2015-02-01

    Fiber-optic pressure sensors have been developed for measurements of intracochlear pressure. The present family of transducers includes an 81 μm diameter sensor employing a SLED light source and single-mode optic fiber, and LED/multi-mode sensors with 126 and 202 μm diameter. The 126 μm diameter pressure sensor also has been constructed with an electrode adhered to its side, for coincident pressure and voltage measurements. These sensors have been used for quantifying cochlear mechanical impedances, informing our understanding of conductive hearing loss and its remediation, and probing the operation of the cochlear amplifier.

  8. Recyclability of mixed office waste papers containing pressure sensitive adhesives and silicone release liners

    Science.gov (United States)

    Julie Hess; Roberta Sena-Gomes; Lisa Davie; Marguerite Sykes

    2001-01-01

    Increased use of pressure sensitive adhesives for labels and stamps has introduced another contaminant into the office paper stream: silicone- coated release liners. This study examines methods and conditions for removal of contaminants, including these liners, from a typical batch of discarded office papers. Removal of contaminants contained in the furnish were...

  9. Asymmetric resonance frequency analysis of in-plane electrothermal silicon cantilevers for nanoparticle sensors

    Science.gov (United States)

    Bertke, Maik; Hamdana, Gerry; Wu, Wenze; Marks, Markus; Suryo Wasisto, Hutomo; Peiner, Erwin

    2016-10-01

    The asymmetric resonance frequency analysis of silicon cantilevers for a low-cost wearable airborne nanoparticle detector (Cantor) is described in this paper. The cantilevers, which are operated in the fundamental in-plane resonance mode, are used as a mass-sensitive microbalance. They are manufactured out of bulk silicon, containing a full piezoresistive Wheatstone bridge and an integrated thermal heater for reading the measurement output signal and stimulating the in-plane excitation, respectively. To optimize the sensor performance, cantilevers with different cantilever geometries are designed, fabricated and characterized. Besides the resonance frequency, the quality factor (Q) of the resonance curve has a high influence concerning the sensor sensitivity. Because of an asymmetric resonance behaviour, a novel fitting function and method to extract the Q is created, different from that of the simple harmonic oscillator (SHO). For testing the sensor in a long-term frequency analysis, a phase- locked loop (PLL) circuit is employed, yielding a frequency stability of up to 0.753 Hz at an Allan variance of 3.77 × 10-6. This proposed asymmetric resonance frequency analysis method is expected to be further used in the process development of the next-generation Cantor.

  10. Asymmetric resonance frequency analysis of in-plane electrothermal silicon cantilevers for nanoparticle sensors

    International Nuclear Information System (INIS)

    Bertke, Maik; Hamdana, Gerry; Wu, Wenze; Marks, Markus; Wasisto, Hutomo Suryo; Peiner, Erwin

    2016-01-01

    The asymmetric resonance frequency analysis of silicon cantilevers for a low-cost wearable airborne nanoparticle detector (Cantor) is described in this paper. The cantilevers, which are operated in the fundamental in-plane resonance mode, are used as a mass-sensitive microbalance. They are manufactured out of bulk silicon, containing a full piezoresistive Wheatstone bridge and an integrated thermal heater for reading the measurement output signal and stimulating the in-plane excitation, respectively. To optimize the sensor performance, cantilevers with different cantilever geometries are designed, fabricated and characterized. Besides the resonance frequency, the quality factor ( Q ) of the resonance curve has a high influence concerning the sensor sensitivity. Because of an asymmetric resonance behaviour, a novel fitting function and method to extract the Q is created, different from that of the simple harmonic oscillator (SHO). For testing the sensor in a long-term frequency analysis, a phase- locked loop (PLL) circuit is employed, yielding a frequency stability of up to 0.753 Hz at an Allan variance of 3.77 × 10 -6 . This proposed asymmetric resonance frequency analysis method is expected to be further used in the process development of the next-generation Cantor. (paper)

  11. Impact of low-dose electron irradiation on n+p silicon strip sensors

    CERN Document Server

    Adam, W.; Dragicevic, M.; Friedl, M.; Fruehwirth, R.; Hoch, M.; Hrubec, J.; Krammer, M.; Treberspurg, W.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Luyckx, S.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Barria, P.; Caillol, C.; Clerbaux, B.; De Lentdecker, G.; Dobur, D.; Favart, L.; Grebenyuk, A.; Lenzi, Th.; Leonard, A.; Maerschalk, Th.; Mohammadi, A.; Pernie, L.; Randle-Conde, A.; Reis, T.; Seva, T.; Thomas, L.; Vander Velde, C.; Vanlaer, P.; Wang, J.; Zenoni, F.; Abu Zeid, S.; Blekman, F.; De Bruyn, I.; D'Hondt, J.; Daci, N.; Deroover, K.; Heracleous, N.; Keaveney, J.; Lowette, S.; Moreels, L.; Olbrechts, A.; Python, Q.; Tavernier, S.; Van Mulders, P.; Van Onsem, G.; Van Parijs, I.; Strom, D.A.; Basegmez, S.; Bruno, G.; Castello, R.; Caudron, A.; Ceard, L.; De Callatay, B.; Delaere, C.; Pree, T.Du; Forthomme, L.; Giammanco, A.; Hollar, J.; Jez, P.; Michotte, D.; Nuttens, C.; Perrini, L.; Pagano, D.; Quertenmont, L.; Selvaggi, M.; Marono, M.Vidal; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G.H.; Harkonen, J.; Lampen, T.; Luukka, P.R.; Maenpaa, T.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Tuuva, T.; Beaulieu, G.; Boudoul, G.; Combaret, C.; Contardo, D.; Gallbit, G.; Lumb, N.; Mathez, H.; Mirabito, L.; Perries, S.; Sabes, D.; Vander Donckt, M.; Verdier, P.; Viret, S.; Zoccarato, Y.; Agram, J.L.; Conte, E.; Fontaine, J.Ch.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.M.; Chabert, E.; Charles, L.; Goetzmann, Ch.; Gross, L.; Hosselet, J.; Mathieu, C.; Richer, M.; Skovpen, K.; Autermann, C.; Edelhoff, M.; Esser, H.; Feld, L.; Karpinski, W.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Raupach, F.; Sammet, J.; Schael, S.; Schwering, G.; Wittmer, B.; Wlochal, M.; Zhukov, V.; Pistone, C.; Fluegge, G.; Kuensken, A.; Geisler, M.; Pooth, O.; Stahl, A.; Bartosik, N.; Behr, J.; Burgmeier, A.; Calligaris, L.; Dolinska, G.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Fluke, G.; Garcia, J.Garay; Gizhko, A.; Hansen, K.; Harb, A.; Hauk, J.; Kalogeropoulos, A.; Kleinwort, C.; Korol, I.; Lange, W.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Nayak, A.; Ntomari, E.; Perrey, H.; Pitzl, D.; Schroeder, M.; Seitz, C.; Spannagel, S.; Zuber, A.; Biskop, H.; Blobel, V.; Buhmann, P.; Centis-Vignali, M.; Draeger, A.R.; Erfle, J.; Garutti, E.; Haller, J.; Henkel, Ch.; Hoffmann, M.; Junkes, A.; Klanner, R.; Lapsien, T.; Mattig, S.; Matysek, M.; Perieanu, A.; Poehlsen, J.; Poehlsen, T.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schuwalow, S.; Schwandt, J.; Sola, V.; Steinbruck, G.; Vormwald, B.; Wellhausen, J.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Eber, R.; Freund, B.; Hartmann, F.; Hauth, Th.; Heindl, S.; Hoffmann, K.H.; Husemann, U.; Kornmeyer, A.; Mallows, S.; Muller, Th.; Nuernberg, A.; Printz, M.; Simonis, H.J.; Steck, P.; Weber, M.; Weiler, Th.; Bhardwaj, A.; Kumar, A.; Ranjan, K.; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Creanza, D.; De Palma, M.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Giordano, F.; Di Mattia, A.; Potenza, R.; Saizu, M.A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Civinini, C.; Gallo, E.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Ciulli, V.; D'Alessandro, R.; Gonzi, S.; Gori, V.; Focardi, E.; Lenzi, P.; Scarlini, E.; Tropiano, A.; Viliani, L.; Ferro, F.; Robutti, E.; Lo Vetere, M.; Gennai, S.; Malvezzi, S.; Menasce, D.; Moroni, L.; Pedrini, D.; Dinardo, M.; Fiorendi, S.; Manzoni, R.A.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Dorigo, T.; Giubilato, P.; Pozzobon, N.; Tosi, M.; Zucchetta, A.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Bilei, G.M.; Bissi, L.; Checcucci, B.; Magalotti, D.; Menichelli, M.; Saha, A.; Servoli, L.; Storchi, L.; Biasini, M.; Conti, E.; Ciangottini, D.; Fano, L.; Lariccia, P.; Mantovani, G.; Passeri, D.; Placidi, P.; Salvatore, M.; Santocchia, A.; Solestizi, L.A.; Spiezia, A.; Demaria, N.; Rivetti, A.; Bellan, R.; Casasso, S.; Costa, M.; Covarelli, R.; Migliore, E.; Monteil, E.; Musich, M.; Pacher, L.; Ravera, F.; Romero, A.; Solano, A.; Trapani, P.; Jaramillo Echeverria, R.; Fernandez, M.; Gomez, G.; Moya, D.; F. Gonzalez Sanchez, J.; Munoz Sanchez, F.J.; Vila, I.; Virto, A.L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Breuker, H.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Alfonso, M.; D'Auria, A.; Detraz, S.; De Visscher, S.; Deyrail, D.; Faccio, F.; Felici, D.; Frank, N.; Gill, K.; Giordano, D.; Harris, P.; Honma, A.; Kaplon, J.; Kornmayer, A.; Kortelainen, M.; Kottelat, L.; Kovacs, M.; Mannelli, M.; Marchioro, A.; Marconi, S.; Martina, S.; Mersi, S.; Michelis, S.; Moll, M.; Onnela, A.; Pakulski, T.; Pavis, S.; Peisert, A.; Pernot, J.F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Rzonca, M.; Stoye, M.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; Bani, L.; di Calafiori, D.; Casal, B.; Djambazov, L.; Donega, M.; Dunser, M.; Eller, P.; Grab, C.; Hits, D.; Horisberger, U.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Perrozzi, L.; Roeser, U.; Rossini, M.; Starodumov, A.; Takahashi, M.; Wallny, R.; Amsler, C.; Bosiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; De Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.H.; Dietz, C.; Grundler, U.; Hou, W.S.; Lu, R.S.; Moya, M.; Wilken, R.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; El Nasr-Storey, S.Seif; Cole, J.; Hobson, P.; Leggat, D.; Reid, I.D.; Teodorescu, L.; Bainbridge, R.; Dauncey, P.; Fulcher, J.; Hall, G.; Magnan, A.M.; Pesaresi, M.; Raymond, D.M.; Uchida, K.; Coughlan, J.A.; Harder, K.; Ilic, J.; Tomalin, I.R.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Malberti, M.; Olmedo, M.; Cerati, G.; Sharma, V.; Vartak, A.; Yagil, A.; Della Porta, G.Zevi; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; McColl, N.; Mullin, S.; White, D.; Cumalat, J.P.; Ford, W.T.; Gaz, A.; Krohn, M.; Stenson, K.; Wagner, S.R.; Baldin, B.; Bolla, G.; Burkett, K.; Butler, J.; Cheung, H.; Chramowicz, J.; Christian, D.; Cooper, W.E.; Deptuch, G.; Derylo, G.; Gingu, C.; Gruenendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Jung, A.; Joshi, U.; Kahlid, F.; Lei, C.M.; Lipton, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Yin, H.; Adams, M.R.; Berry, D.R.; Evdokimov, A.; Evdokimov, O.; Gerber, C.E.; Hofman, D.J.; Kapustka, B.K.; O'Brien, C.; Sandoval Gonzalez, D.I.; Trauger, H.; Turner, P.; Parashar, N.; Stupak, J., III; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D.H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Benelli, G.; Gray, J.; Majumder, D.; Noonan, D.; Sanders, S.; Stringer, R.; Ivanov, A.; Makouski, M.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J.G.; Cremaldi, L.M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Bose, S.; Claes, D.R.; Dominguez, A.; Fangmeier, C.; Gonzalez Suarez, R.; Meier, F.; Monroy, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Duggan, D.; Halkiadakis, E.; Lath, A.; Park, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Mendez, H.; Ramirez Vargas, J.E.; Alyari, M.; Dolen, J.; George, J.; Godshalk, A.; Iashvili, I.; Kaisen, J.; Kharchilava, A.; Kumar, A.; Rappoccio, S.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; Kaufman, G.; Mirman, N.; Ryd, A.; Salvati, E.; Skinnari, L.; Thom, J.; Thompson, J.; Tucker, J.; Winstrom, L.; Akgun, B.; Ecklund, K.M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Osipenkov, I.; Perloff, A.; Ulmer, K.A.; Delannoy, A.G.; D'Angelo, P.; Johns, W.

    2015-01-01

    The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics K.K. on 200 micrometer thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 micrometer, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the Sr-90 source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80{\\deg}C and annealing times of 18 hours, showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positi...

  12. Pressure effects on the thermal stability of silicon carbide fibers

    Science.gov (United States)

    Jaskowiak, Martha H.; Dicarlo, James A.

    1989-01-01

    Commercially available polymer derived SiC fibers were treated at temperatures from 1000 to 2200 C in vacuum and argon gas pressure of 1 and 1360 atm. Effects of gas pressure on the thermal stability of the fibers were determined through property comparison between the pressure treated fibers and vacuum treated fibers. Investigation of the thermal stability included studies of the fiber microstructure, weight loss, grain growth, and tensile strength. The 1360 atm argon gas treatment was found to shift the onset of fiber weight loss from 1200 to above 1500 C. Grain growth and tensile strength degradation were correlated with weight loss and were thus also inhibited by high pressure treatments. Additional heat treatment in 1 atm argon of the fibers initially treated at 1360 atm argon caused further weight loss and tensile strength degradation, thus indicating that high pressure inert gas conditions would be effective only in delaying fiber strength degradation. However, if the high gas pressure could be maintained throughout composite fabrication, then the composites could be processed at higher temperatures.

  13. Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

    Energy Technology Data Exchange (ETDEWEB)

    Ahsan, M.; Bolton, T.; Carnes, K.; /Kansas State U.; Demarteau, M.; /Fermilab; Demina, R.; /Rochester U.; Gray, T.; /Kansas State U.; Korjenevski, S.; /Rochester U.; Lehner, F.; /Zurich U.; Lipton, R.; Mao, H.S.; /Fermilab; McCarthy, R.; /SUNY, Stony Brook /Kansas State U. /Fermilab

    2010-01-01

    We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10{sup 14} p/cm{sup 2} at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

  14. Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

    International Nuclear Information System (INIS)

    Ahsan, M.; Bolton, T.; Carnes, K.; Demarteau, M.; Demina, R.; Gray, T.; Korjenevski, S.; Lehner, F.; Lipton, R.; Mao, H.S.; McCarthy, R.

    2010-01-01

    We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10 14 p/cm 2 at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

  15. A low cost and hybrid technology for integrating silicon sensors or actuators in polymer microfluidic systems

    International Nuclear Information System (INIS)

    Charlot, Samuel; Gué, Anne-Marie; Tasselli, Josiane; Marty, Antoine; Abgrall, Patrick; Estève, Daniel

    2008-01-01

    This paper describes a new technology permitting a hybrid integration of silicon chips in polymer (PDMS and SU8) microfluidic structures. This two-step technology starts with transferring the silicon device onto a rigid substrate (typically PCB) and planarizing it, and then it proceeds with stacking of the polymer-made fluidic network onto the device. The technology is low cost, based on screen printing and lamination, can be applied to treat large surface areas, and is compatible with standard photolithography and vacuum based approaches. We show, as an example, the integration of a thermal sensor inside channels made of PDMS or SU8. The developed structures had no fluid leaks at the Si/polymer interfaces and the electrical circuit was perfectly tightproof. (note)

  16. Capacitive Micro Pressure Sensor Integrated with a Ring Oscillator Circuit on Chip

    Directory of Open Access Journals (Sweden)

    Cheng-Yang Liu

    2009-12-01

    Full Text Available The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0–300 kPa.

  17. Oxygen-Partial-Pressure Sensor for Aircraft Oxygen Mask

    Science.gov (United States)

    Kelly, Mark; Pettit, Donald

    2003-01-01

    A device that generates an alarm when the partial pressure of oxygen decreases to less than a preset level has been developed to help prevent hypoxia in a pilot or other crewmember of a military or other high-performance aircraft. Loss of oxygen partial pressure can be caused by poor fit of the mask or failure of a hose or other component of an oxygen distribution system. The deleterious physical and mental effects of hypoxia cause the loss of a military aircraft and crew every few years. The device is installed in the crewmember s oxygen mask and is powered via communication wiring already present in all such oxygen masks. The device (see figure) includes an electrochemical sensor, the output potential of which is proportional to the partial pressure of oxygen. The output of the sensor is amplified and fed to the input of a comparator circuit. A reference potential that corresponds to the amplified sensor output at the alarm oxygen-partial-pressure level is fed to the second input of the comparator. When the sensed partial pressure of oxygen falls below the minimum acceptable level, the output of the comparator goes from the low state (a few millivolts) to the high state (near the supply potential, which is typically 6.8 V for microphone power). The switching of the comparator output to the high state triggers a tactile alarm in the form of a vibration in the mask, generated by a small 1.3-Vdc pager motor spinning an eccentric mass at a rate between 8,000 and 10,000 rpm. The sensation of the mask vibrating against the crewmember s nose is very effective at alerting the crewmember, who may already be groggy from hypoxia and is immersed in an environment that is saturated with visual cues and sounds. Indeed, the sensation is one of rudeness, but such rudeness could be what is needed to stimulate the crewmember to take corrective action in a life-threatening situation.

  18. Piezoresistive Composite Silicon Dioxide Nanocantilever Surface Stress Sensor: Design and Optimization.

    Science.gov (United States)

    Mathew, Ribu; Sankar, A Ravi

    2018-05-01

    In this paper, we present the design and optimization of a rectangular piezoresistive composite silicon dioxide nanocantilever sensor. Unlike the conventional design approach, we perform the sensor optimization by not only considering its electro-mechanical response but also incorporating the impact of self-heating induced thermal drift in its terminal characteristics. Through extensive simulations first we comprehend and quantify the inaccuracies due to self-heating effect induced by the geometrical and intrinsic parameters of the piezoresistor. Then, by optimizing the ratio of electrical sensitivity to thermal sensitivity defined as the sensitivity ratio (υ) we improve the sensor performance and measurement reliability. Results show that to ensure υ ≥ 1, shorter and wider piezoresistors are better. In addition, it is observed that unlike the general belief that high doping concentration of piezoresistor reduces thermal sensitivity in piezoresistive sensors, to ensure υ ≥ 1 doping concentration (p) should be in the range: 1E18 cm-3 ≤ p ≤ 1E19 cm-3. Finally, we provide a set of design guidelines that will help NEMS engineers to optimize the performance of such sensors for chemical and biological sensing applications.

  19. An edge-TCT setup for the investigation of radiation damaged silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Feindt, Finn; Scharf, Christian; Garutti, Erika; Klanner, Robert [Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg (Germany)

    2016-07-01

    The aim of this work is to measure the electric field, drift velocity and charge collection of electrons and holes in radiation-damaged silicon strip sensors. For this purpose the edge Transient Current Technique (TCT) is employed. In contrast to conventional TCT, this method requires light from a sub-ns pulsed, infrared laser to be focused to a μm-size spot and scanned across the polished edge of a strip sensor. Thus electron-hole pairs are generated at a known depth in the sensor. Electrons and holes drift in the electric field and induce transient currents on the sensor electrodes. The current wave forms are analyzed as a function of the applied voltage and the position of the laser focus in order to determine the electric field, the drift velocities and the charge collection. In this talk the setup and the procedure for polishing the sensor edge are described, and first results, regarding the measurement of the laser light focus are presented.

  20. Transparent amorphous silicon sensors for the alignment system of particle detectors

    International Nuclear Information System (INIS)

    Fernandez, M.G.

    1999-01-01

    In this document we will present a historical review of ALMY sensors. The starting point was 1993 when the first prototypes were built. A description of their performance at this early stage will make clear which features have to be modified in order to cope with the stringent requirements imposed by ATLAS and CMS. As time went by, the problems were fixed and nowadays a fine working and operational ALMY sensor has been built. The following sections of this paper show how these aims were achieved. In section 2 the reader will know where and when ALMY sensors were born. It explains some reasons why amorphous silicon was chosen as photosensitive material. Section 3 intends to describe the morphology and physical properties of this device. Next sections present results from the diverse characterizations from ATLAS and CMS. Particularly, section 4 deals with the uniformity and spatial resolution of the first prototypes. Details on the light transmission after one sensor are given in section 5. The different radiation hardness tests for ALMYs are introduced in section 6. The propagation of a plane wave through the different layers helps to understand the origin of the systematics found in the first prototypes (section 7). The performance of the new ALMY sensors is presented in section 8. (author)

  1. Transparent amorphous silicon sensors for the alignment system of particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, M.G. [Ciemat, Madrid (Spain)

    1999-07-01

    In this document we will present a historical review of ALMY sensors. The starting point was 1993 when the first prototypes were built. A description of their performance at this early stage will make clear which features have to be modified in order to cope with the stringent requirements imposed by ATLAS and CMS. As time went by, the problems were fixed and nowadays a fine working and operational ALMY sensor has been built. The following sections of this paper show how these aims were achieved. In section 2 the reader will know where and when ALMY sensors were born. It explains some reasons why amorphous silicon was chosen as photosensitive material. Section 3 intends to describe the morphology and physical properties of this device. Next sections present results from the diverse characterizations from ATLAS and CMS. Particularly, section 4 deals with the uniformity and spatial resolution of the first prototypes. Details on the light transmission after one sensor are given in section 5. The different radiation hardness tests for ALMYs are introduced in section 6. The propagation of a plane wave through the different layers helps to understand the origin of the systematics found in the first prototypes (section 7). The performance of the new ALMY sensors is presented in section 8. (author)

  2. Two-dimensional wavelet transform feature extraction for porous silicon chemical sensors.

    Science.gov (United States)

    Murguía, José S; Vergara, Alexander; Vargas-Olmos, Cecilia; Wong, Travis J; Fonollosa, Jordi; Huerta, Ramón

    2013-06-27

    Designing reliable, fast responding, highly sensitive, and low-power consuming chemo-sensory systems has long been a major goal in chemo-sensing. This goal, however, presents a difficult challenge because having a set of chemo-sensory detectors exhibiting all these aforementioned ideal conditions are still largely un-realizable to-date. This paper presents a unique perspective on capturing more in-depth insights into the physicochemical interactions of two distinct, selectively chemically modified porous silicon (pSi) film-based optical gas sensors by implementing an innovative, based on signal processing methodology, namely the two-dimensional discrete wavelet transform. Specifically, the method consists of using the two-dimensional discrete wavelet transform as a feature extraction method to capture the non-stationary behavior from the bi-dimensional pSi rugate sensor response. Utilizing a comprehensive set of measurements collected from each of the aforementioned optically based chemical sensors, we evaluate the significance of our approach on a complex, six-dimensional chemical analyte discrimination/quantification task problem. Due to the bi-dimensional aspects naturally governing the optical sensor response to chemical analytes, our findings provide evidence that the proposed feature extractor strategy may be a valuable tool to deepen our understanding of the performance of optically based chemical sensors as well as an important step toward attaining their implementation in more realistic chemo-sensing applications. Copyright © 2013 Elsevier B.V. All rights reserved.

  3. Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection

    CERN Document Server

    Despeisse, M; Jarron, P; Kaplon, J; Moraes, D; Nardulli, A; Powolny, F; Wyrsch, N

    2008-01-01

    Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. Three different circuits were designed in a quarter micron CMOS technology for these studies. The so-called TFA (Thin-Film on ASIC) detectors obtained after deposition of a-Si:H sensors on the developed circuits are presented. High internal electric fields (104 to 105 V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in this amorphous material. However, the deposited sensor's leakage current at such fields turns out to be an important parameter which limits the performance of a TFA detector. Its detailed study is presented as well as the detector's pixel segmentation. Signal induction by generated free carrier motion in the a-Si:H sensor has been characterized using a 660 nm pul...

  4. Optimizing the quality of silicon strip sensors produced by Infineon Technologies Austria AG

    International Nuclear Information System (INIS)

    Treberspurg, W; Bergauer, T; Dragicevic, M; König, A; Bartl, U; Hacker, J; Wübben, T

    2014-01-01

    The tracking systems of most modern particle physics experiments are realized by silicon based sensors. The size of such systems has continuously increased and nowadays a sensitive area of several 100 m 2 has to be covered. This large amount of sensors might exceed the production capabilities of existing companies and institutes. Therefore the Institute of High Energy Physics of the Austrian Academy of Sciences (HEPHY) and the European semiconductor manufacturer Infineon Technologies Austria AG developed together a production process for p-on-n strip sensors. Although the first prototype run has shown a promising quality, it has been observed that weak strips exist, which are mainly located at distinctive areas on each wafer. At these areas the affected parameters are correlated to each other. A similar behaviour could be reproduced with a smaller second batch, whose sensors have been used for further analysis and advanced measurements. This paper sums up the characteristic behaviour of the specific effect and presents different possibilities how to cure the sensors. The systematic accumulation of weak strips can be traced back to a specific operation during the fabrication process. All data strongly indicate that the effect is caused by local charging effects on an isolating layer

  5. Design of a radiation hard silicon pixel sensor for X-ray science

    Energy Technology Data Exchange (ETDEWEB)

    Schwandt, Joern

    2014-06-15

    At DESY Hamburg the European X-ray Free-Electron Laser (EuXFEL) is presently under construction. The EuXFEL has unique properties with respect to X-ray energy, instantaneous intensity, pulse length, coherence and number of pulses/sec. These properties of the EuXFEL pose very demanding requirements for imaging detectors. One of the detector systems which is currently under development to meet these challenges is the Adaptive Gain Integrating Pixel Detector, AGIPD. It is a hybrid pixel-detector system with 1024 x 1024 p{sup +} pixels of dimensions 200 μm x 200 μm, made of 16 p{sup +}nn{sup +}- silicon sensors, each with 10.52 cm x 2.56 cm sensitive area and 500 μm thickness. The particular requirements for the AGIPD are a separation between noise and single photons down to energies of 5 keV, more than 10{sup 4} photons per pixel for a pulse duration of less than 100 fs, negligible pile-up at the EuXFEL repetition rate of 4.5 MHz, operation for X-ray doses up to 1 GGy, good efficiency for X-rays with energies between 5 and 20 keV, and minimal inactive regions at the edges. The main challenge in the sensor design is the required radiation tolerance and high operational voltage, which is required to reduce the so-called plasma effect. This requires a specially optimized sensor. The X-ray radiation damage results in a build-up of oxide charges and interface traps which lead to a reduction of the breakdown voltage, increased leakage current, increased interpixel capacitances and charge losses. Extensive TCAD simulations have been performed to understand the impact of X-ray radiation damage on the detector performance and optimize the sensor design. To take radiation damage into account in the simulation, radiation damage parameters have been determined on MOS capacitors and gate-controlled diodes as function of dose. The optimized sensor design was fabricated by SINTEF. Irradiation tests on test structures and sensors show that the sensor design is radiation hard and

  6. Justification of response time testing requirements for pressure and differential pressure sensors

    International Nuclear Information System (INIS)

    Weiss, J.M.; Mayo, C.; Swisher, V.

    1991-01-01

    This paper reports on response time testing (RTT) requirements that were imposed on pressure, differential pressure sensors as a conservative approach to insure that assumptions in the plant safety analyses were met. The purpose of this project has been to identify the need for response time testing using the bases identified in IEEE Standard 338. A combination of plant data analyses, failure modes, and effects analyses (FMEAs) was performed. Eighteen currently qualified sensor models were utilized. The results of these analyses indicate that there are only two failure modes that affect response time, not sensor output concurrently. For these failure modes, appropriate plant actions and testing techniques were identified. Safety system RTT requirements were established by IEEE Standard 338-1975. Criteria for the Periodic Testing of Class IE Power, Protection Systems, presuming the need existed for this testing. This standard established guidelines for periodic testing to verify that loop response times of installed nuclear safety-related equipment were within the limits presumed by the design basis plant transient, accident analyses. The requirements covered all passive, active components in an instrument loop, including sensors. Individual components could be tested either in groups or separately to determine the overall loop response time

  7. Potential of silicon nanowires structures as nanoscale piezoresistors in mechanical sensors

    International Nuclear Information System (INIS)

    Messina, M; Njuguna, J

    2012-01-01

    This paper presents the design of a single square millimeter 3-axial accelerometer for bio-mechanics measurements that exploit the potential of silicon nanowires structures as nanoscale piezoresistors. The main requirements of this application are miniaturization and high measurement accuracy. Nanowires as nanoscale piezoresistive devices have been chosen as sensing element, due to their high sensitivity and miniaturization achievable. By exploiting the electro-mechanical features of nanowires as nanoscale piezoresistors, the nominal sensor sensitivity is overall boosted by more than 30 times. This approach allows significant higher accuracy and resolution with smaller sensing element in comparison with conventional devices without the need of signal amplification.

  8. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-09-04

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  9. Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, G.F., E-mail: dallabe@disi.unitn.it [DISI, Università di Trento, and INFN Trento, Trento (Italy); RSens srl, Modena (Italy); Tyzhnevyi, V. [DISI, Università di Trento, and INFN Trento, Trento (Italy); Bosi, A.; Bonaiuti, M. [RSens srl, Modena (Italy); Angelini, C.; Batignani, G.; Bettarini, S.; Bosi, F.; Forti, F.; Giorgi, M.A.; Morsani, F.; Paoloni, E.; Rizzo, G.; Walsh, J. [Dipartimento di Fisica, Università di Pisa, and INFN Pisa, Pisa (Italy); Lusiani, A. [Scuola Normale Superiore and INFN Pisa, Pisa (Italy); Ciolini, R.; Curzio, G.; D' Errico, F.; Del Gratta, A. [Dipartimento di Ingegneria Meccanica, Nucleare e della Produzione, Università di Pisa, Pisa (Italy); Bidinelli, L. [En and tech, Università di Modena e Reggio Emilia, Reggio Emilia (Italy); RSens srl, Modena (Italy); and others

    2013-08-01

    A battery-powered, wireless Radon sensor has been designed and realized using a BJT, fabricated on a high-resistivity-silicon substrate, as a radiation detector. Radon daughters are electrostatically collected on the detector surface. Thanks to the BJT internal amplification, real-time α particle detection is possible using simple readout electronics, which records the particle arrival time and charge. Functional tests at known Radon concentrations, demonstrated a sensitivity up to 4.9 cph/(100 Bq/m{sup 3}) and a count rate of 0.05 cph at nominally-zero Radon concentration.

  10. Energy efficiency enhancements for semiconductors, communications, sensors and software achieved in cool silicon cluster project

    Science.gov (United States)

    Ellinger, Frank; Mikolajick, Thomas; Fettweis, Gerhard; Hentschel, Dieter; Kolodinski, Sabine; Warnecke, Helmut; Reppe, Thomas; Tzschoppe, Christoph; Dohl, Jan; Carta, Corrado; Fritsche, David; Tretter, Gregor; Wiatr, Maciej; Detlef Kronholz, Stefan; Mikalo, Ricardo Pablo; Heinrich, Harald; Paulo, Robert; Wolf, Robert; Hübner, Johannes; Waltsgott, Johannes; Meißner, Klaus; Richter, Robert; Michler, Oliver; Bausinger, Markus; Mehlich, Heiko; Hahmann, Martin; Möller, Henning; Wiemer, Maik; Holland, Hans-Jürgen; Gärtner, Roberto; Schubert, Stefan; Richter, Alexander; Strobel, Axel; Fehske, Albrecht; Cech, Sebastian; Aßmann, Uwe; Pawlak, Andreas; Schröter, Michael; Finger, Wolfgang; Schumann, Stefan; Höppner, Sebastian; Walter, Dennis; Eisenreich, Holger; Schüffny, René

    2013-07-01

    An overview about the German cluster project Cool Silicon aiming at increasing the energy efficiency for semiconductors, communications, sensors and software is presented. Examples for achievements are: 1000 times reduced gate leakage in transistors using high-fc (HKMG) materials compared to conventional poly-gate (SiON) devices at the same technology node; 700 V transistors integrated in standard 0.35 μm CMOS; solar cell efficiencies above 19% at cars Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

  11. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-01-01

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  12. Study and characterization of an integrated circuit-deposited hydrogenated amorphous silicon sensor for the detection of particles and radiations

    International Nuclear Information System (INIS)

    Despeisse, M.

    2006-03-01

    Next generation experiments at the European laboratory of particle physics (CERN) require particle detector alternatives to actual silicon detectors. This thesis presents a novel detector technology, which is based on the deposition of a hydrogenated amorphous silicon sensor on top of an integrated circuit. Performance and limitations of this technology have been assessed for the first time in this thesis in the context of particle detectors. Specific integrated circuits have been designed and the detector segmentation, the interface sensor-chip and the sensor leakage current have been studied in details. The signal induced by the track of an ionizing particle in the sensor has been characterized and results on the signal speed, amplitude and on the sensor resistance to radiation are presented. The results are promising regarding the use of this novel technology for radiation detection, though limitations have been shown for particle physics application. (author)

  13. Superconducting Open-Framework Allotrope of Silicon at Ambient Pressure

    Science.gov (United States)

    Sung, Ha-Jun; Han, W. H.; Lee, In-Ho; Chang, K. J.

    2018-04-01

    Diamond Si is a semiconductor with an indirect band gap that is the basis of modern semiconductor technology. Although many metastable forms of Si were observed using diamond anvil cells for compression and chemical precursors for synthesis, no metallic phase at ambient conditions has been reported thus far. Here we report the prediction of pure metallic Si allotropes with open channels at ambient pressure, unlike a cubic diamond structure in covalent bonding networks. The metallic phase termed P 6 /m -Si6 can be obtained by removing Na after pressure release from a novel Na-Si clathrate called P 6 /m -NaSi6 , which is predicted through first-principles study at high pressure. We identify that both P 6 /m -NaSi6 and P 6 /m -Si6 are stable and superconducting with the critical temperatures of about 13 and 12 K at ambient pressure, respectively. The prediction of new Na-Si and Si clathrate structures presents the possibility of exploring new exotic allotropes useful for Si-based devices.

  14. Optimization of design parameters for bulk micromachined silicon membranes for piezoresistive pressure sensing application

    International Nuclear Information System (INIS)

    Belwanshi, Vinod; Topkar, Anita

    2016-01-01

    Finite element analysis study has been carried out to optimize the design parameters for bulk micro-machined silicon membranes for piezoresistive pressure sensing applications. The design is targeted for measurement of pressure up to 200 bar for nuclear reactor applications. The mechanical behavior of bulk micro-machined silicon membranes in terms of deflection and stress generation has been simulated. Based on the simulation results, optimization of the membrane design parameters in terms of length, width and thickness has been carried out. Subsequent to optimization of membrane geometrical parameters, the dimensions and location of the high stress concentration region for implantation of piezoresistors have been obtained for sensing of pressure using piezoresistive sensing technique.

  15. Optimization of design parameters for bulk micromachined silicon membranes for piezoresistive pressure sensing application

    Science.gov (United States)

    Belwanshi, Vinod; Topkar, Anita

    2016-05-01

    Finite element analysis study has been carried out to optimize the design parameters for bulk micro-machined silicon membranes for piezoresistive pressure sensing applications. The design is targeted for measurement of pressure up to 200 bar for nuclear reactor applications. The mechanical behavior of bulk micro-machined silicon membranes in terms of deflection and stress generation has been simulated. Based on the simulation results, optimization of the membrane design parameters in terms of length, width and thickness has been carried out. Subsequent to optimization of membrane geometrical parameters, the dimensions and location of the high stress concentration region for implantation of piezoresistors have been obtained for sensing of pressure using piezoresistive sensing technique.

  16. Confined high-pressure chemical deposition of hydrogenated amorphous silicon.

    Science.gov (United States)

    Baril, Neil F; He, Rongrui; Day, Todd D; Sparks, Justin R; Keshavarzi, Banafsheh; Krishnamurthi, Mahesh; Borhan, Ali; Gopalan, Venkatraman; Peacock, Anna C; Healy, Noel; Sazio, Pier J A; Badding, John V

    2012-01-11

    Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semiconductors. The challenge in producing it from SiH(4) precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow for hydrogen incorporation into a deposited film. The use of high precursor concentrations is one possible means to increase reaction rates at low enough temperatures, but in conventional reactors such an approach produces large numbers of homogeneously nucleated particles in the gas phase, rather than the desired heterogeneous deposition on a surface. We report that deposition in confined micro-/nanoreactors overcomes this difficulty, allowing for the use of silane concentrations many orders of magnitude higher than conventionally employed while still realizing well-developed films. a-Si:H micro-/nanowires can be deposited in this way in extreme aspect ratio, small-diameter optical fiber capillary templates. The semiconductor materials deposited have ~0.5 atom% hydrogen with passivated dangling bonds and good electronic properties. They should be suitable for a wide range of photonic and electronic applications such as nonlinear optical fibers and solar cells. © 2011 American Chemical Society

  17. Tilted c-Axis Thin-Film Bulk Wave Resonant Pressure Sensors With Improved Sensitivity

    OpenAIRE

    Anderås, Emil; Katardjiev, Ilia; Yantchev, Ventsislav

    2012-01-01

    Aluminum nitride thin film bulk wave resonant pressure sensors employing c- and tilted c-axis texture, have been fabricated and tested for their pressure sensitivities. The c-axis tilted FBAR pressure sensors demonstrate substantially higher pressure sensitivity compared to its c-axis oriented counterpart. More specifically the thickness plate quasi-shear resonance has demonstrated the highest pressure sensitivity while further being able to preserve its performance in liquid environment.

  18. Flexible Piezoelectric-Induced Pressure Sensors for Static Measurements Based on Nanowires/Graphene Heterostructures.

    Science.gov (United States)

    Chen, Zefeng; Wang, Zhao; Li, Xinming; Lin, Yuxuan; Luo, Ningqi; Long, Mingzhu; Zhao, Ni; Xu, Jian-Bin

    2017-05-23

    The piezoelectric effect is widely applied in pressure sensors for the detection of dynamic signals. However, these piezoelectric-induced pressure sensors have challenges in measuring static signals that are based on the transient flow of electrons in an external load as driven by the piezopotential arisen from dynamic stress. Here, we present a pressure sensor with nanowires/graphene heterostructures for static measurements based on the synergistic mechanisms between strain-induced polarization charges in piezoelectric nanowires and the caused change of carrier scattering in graphene. Compared to the conventional piezoelectric nanowire or graphene pressure sensors, this sensor is capable of measuring static pressures with a sensitivity of up to 9.4 × 10 -3 kPa -1 and a fast response time down to 5-7 ms. This demonstration of pressure sensors shows great potential in the applications of electronic skin and wearable devices.

  19. Design and Optimization of Dual Optical Fiber MEMS Pressure Sensor For Biomedical Applications

    International Nuclear Information System (INIS)

    Dagang, Guo; Po, Samuel Ng Choon; Hock, Francis Tay Eng; Rongming, Lin

    2006-01-01

    A novel Single Deeply Corrugated Diaphragm (SDCD) based dual optical fiber Fabry-Perot pressure sensor for blood pressure measurement is proposed. Both mechanical and optical simulations are performed to demonstrate the feasibility and superior performance of the proposed sensor. Result shows that less than 2% nonlinearity can be achieved for the proposed sensor using optimal Fabry-Perot microcavity. Also, the fabrication process of the proposed sensor is given, instead of complicated fusion bonding process, only bulk and surface micromachining techniques are required which facilitate the mass production of such biocompatible and disposable pressure sensors

  20. Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

    International Nuclear Information System (INIS)

    Mazzillo, M.; Renna, L.; Costa, N.; Badalà, P.; Sciuto, A.; Mannino, G.

    2016-01-01

    Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun is our primary natural source of UV radiation. The strength of the sun's ultraviolet radiation is expressed as Solar UV Index (UVI). UV-A (320–400 nm) and UV-B (290–320 nm) rays mostly contribute to UVI. UV-B is typically the most destructive form of UV radiation because it has enough energy to cause photochemical damage to cellular DNA. Also overexposure to UV-A rays, although these are less energetic than UV-B photons, has been associated with toughening of the skin, suppression of the immune system, and cataract formation. The use of preventive measures to decrease sunlight UV radiation absorption is fundamental to reduce acute and irreversible health diseases to skin, eyes and immune system. In this perspective UV sensors able to monitor in a monolithic and compact chip the UV Index and relative UV-A and UV-B components of solar spectrum can play a relevant role for prevention, especially in view of the integration of these detectors in close at hand portable devices. Here we present the preliminary results obtained on our UV-A sensor technology based on the use of hydrogenated Silicon Nitride (SiN:H) thin passivating layers deposited on the surface of thin continuous metal film Ni 2 Si/4H-SiC Schottky detectors, already used for UV-Index monitoring. The first UV-A detector prototypes exhibit a very low leakage current density of about 0.2 pA/mm 2 and a peak responsivity value of 0.027 A/W at 330 nm, both measured at 0V bias.

  1. Non-pressurized sintered silicon carbide with titanium carbide reinforcement

    International Nuclear Information System (INIS)

    Adler, J.

    1992-01-01

    A non-pressurized compression of SiC-TiC composite materials can be achieved via liquid phase sintering by the application of oxidic additives. Materials with TiC proportions up to 40% by volume of TiC and densities of 97 to 98% TD were produced at sintering temperatures around 1875 C. With SiC sintered in the liquid phase an increase of toughness at fracture of 80% compared with conventionally non-pressurized sintered SiC was achieved with B/C additive. No further increase could be achieved by the addition of TiC particles. However, the oxidation resistance at 1200 C was worsened. (orig.) [de

  2. Methods and Systems for Configuring Sensor Acquisition Based on Pressure Steps

    Science.gov (United States)

    DeDonato, Mathew (Inventor)

    2015-01-01

    Technologies are provided for underwater measurements. A system includes an underwater vessels including: a plurality of sensors disposed thereon for measuring underwater properties; and a programmable controller configured to selectively activate the plurality of sensors based at least in part on underwater pressure. A user may program at what pressure ranges certain sensors are activated to measure selected properties, and may also program the ascent/descent rate of the underwater vessel, which is correlated with the underwater pressure.

  3. Highly Sensitive, Transparent, and Durable Pressure Sensors Based on Sea-Urchin Shaped Metal Nanoparticles.

    Science.gov (United States)

    Lee, Donghwa; Lee, Hyungjin; Jeong, Youngjun; Ahn, Yumi; Nam, Geonik; Lee, Youngu

    2016-11-01

    Highly sensitive, transparent, and durable pressure sensors are fabricated using sea-urchin-shaped metal nanoparticles and insulating polyurethane elastomer. The pressure sensors exhibit outstanding sensitivity (2.46 kPa -1 ), superior optical transmittance (84.8% at 550 nm), fast response/relaxation time (30 ms), and excellent operational durability. In addition, the pressure sensors successfully detect minute movements of human muscles. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. System for detecting operating errors in a variable valve timing engine using pressure sensors

    Science.gov (United States)

    Wiles, Matthew A.; Marriot, Craig D

    2013-07-02

    A method and control module includes a pressure sensor data comparison module that compares measured pressure volume signal segments to ideal pressure volume segments. A valve actuation hardware remedy module performs a hardware remedy in response to comparing the measured pressure volume signal segments to the ideal pressure volume segments when a valve actuation hardware failure is detected.

  5. Wireless contactless pressure measurement of an LC passive pressure sensor with a novel antenna for high-temperature applications

    International Nuclear Information System (INIS)

    Li Chen; Tan Qiu-Lin; Xue Chen-Yang; Zhang Wen-Dong; Li Yun-Zhi; Xiong Ji-Jun

    2015-01-01

    In this paper, a novel antenna is proposed for high-temperature testing, which can make the high-temperature pressure characteristics of a wireless passive ceramic pressure sensor demonstrated at up to a temperature of 600 °C. The design parameters of the antenna are similar to those of the sensor, which will increase the coupling strength between the sensor and testing antenna. The antenna is fabricated in thick film integrated technology, and the properties of the alumina ceramic and silver ensure the feasibility of the antenna in high-temperature environments. The sensor, coupled with the ceramic antenna, is investigated using a high-temperature pressure testing platform. The experimental measurement results show that the pressure signal in a harsh environment can be detected by the frequency diversity of the sensor. (paper)

  6. A radiographic imaging system based upon a 2-D silicon microstrip sensor

    CERN Document Server

    Papanestis, A; Corrin, E; Raymond, M; Hall, G; Triantis, F A; Manthos, N; Evagelou, I; Van den Stelt, P; Tarrant, T; Speller, R D; Royle, G F

    2000-01-01

    A high resolution, direct-digital detector system based upon a 2-D silicon microstrip sensor has been designed, built and is undergoing evaluation for applications in dentistry and mammography. The sensor parameters and image requirements were selected using Monte Carlo simulations. Sensors selected for evaluation have a strip pitch of 50mum on the p-side and 80mum on the n-side. Front-end electronics and data acquisition are based on the APV6 chip and were adapted from systems used at CERN for high-energy physics experiments. The APV6 chip is not self-triggering so data acquisition is done at a fixed trigger rate. This paper describes the mammographic evaluation of the double sided microstrip sensor. Raw data correction procedures were implemented to remove the effects of dead strips and non-uniform response. Standard test objects (TORMAX) were used to determine limiting spatial resolution and detectability. MTFs were determined using the edge response. The results indicate that the spatial resolution of the...

  7. Silicon sensor prototypes for the Phase II upgrade of the CMS tracker

    Energy Technology Data Exchange (ETDEWEB)

    Bergauer, Thomas, E-mail: thomas.bergauer@oeaw.ac.at

    2016-09-21

    The High-Luminosity LHC (HL-LHC) has been identified as the highest priority program in High Energy Physics in the mid-term future. It will provide the experiments an additional integrated luminosity of about 2500 fb{sup −1} over 10 years of operation, starting in 2025. In order to meet the experimental challenges of unprecedented p–p luminosity, especially in terms of radiation levels and occupancy, the CMS collaboration will need to replace its entire strip tracker by a new one. In this paper the baseline layout option for this new Phase-II tracker is shown, together with two variants using a tilted barrel geometry or larger modules from 8-inch silicon wafers. Moreover, the two module concepts are discussed, which consist either of two strip sensors (2S) or of one strip and one pixel sensor (PS). These two designs allow p{sub T} discrimination at module level enabling the tracker to contribute to the L1 trigger decision. The paper presents testing results of the macro-pixel-light sensor for the PS module and shows the first electrical characterization of unirradiated, full-scale strip sensor prototypes for the 2S module concept, both on 6- and 8-inch wafers.

  8. Edgeless silicon sensors for Medipix-based large-area X-ray imaging detectors

    International Nuclear Information System (INIS)

    Bosma, M J; Visser, J; Koffeman, E N; Evrard, O; De Moor, P; De Munck, K; Tezcan, D Sabuncuoglu

    2011-01-01

    Some X-ray imaging applications demand sensitive areas exceeding the active area of a single sensor. This requires a seamless tessellation of multiple detector modules with edgeless sensors. Our research is aimed at minimising the insensitive periphery that isolates the active area from the edge. Reduction of the edge-defect induced charge injection, caused by the deleterious effects of dicing, is an important step. We report on the electrical characterisation of 300 μm thick edgeless silicon p + -ν-n + diodes, diced using deep reactive ion etching. Sensors with both n-type and p-type stop rings were fabricated in various edge topologies. Leakage currents in the active area are compared with those of sensors with a conventional design. As expected, we observe an inverse correlation between leakage-current density and both the edge distance and stop-ring width. From this correlation we determine a minimum acceptable edge distance of 50 μm. We also conclude that structures with a p-type stop ring show lower leakage currents and higher breakdown voltages than the ones with an n-type stop ring.

  9. Hydrogenated amorphous silicon sensors based on thin film on ASIC technology

    CERN Document Server

    Despeisse, M; Anelli, G; Jarron, P; Kaplon, J; Rusack, R; Saramad, S; Wyrsch, N

    2006-01-01

    The performance and limitations of a novel detector technology based on the deposition of a thin-film sensor on top of processed integrated circuits have been studied. Hydrogenated amorphous silicon (a-Si:H) films have been deposited on top of CMOS circuits developed for these studies and the resulting "thin-film on ASIC" (TFA) detectors are presented. The leakage current of the a-Si:H sensor at high reverse biases turns out to be an important parameter limiting the performance of a TFA detector. Its detailed study and the pixel segmentation of the detector are presented. High internal electric fields (in the order of 10/sup 4/-10/sup 5/ V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in a-Si:H. Signal induction by generated carrier motion and speed in the a-Si:H sensor have been studied with a 660 nm pulsed laser on a TFA detector based on an ASIC integrating 5 ns peaking time pre- amplifiers. The measurement set-up also permits to study the depletion of the senso...

  10. Modification of inkjet printer for polymer sensitive layer preparation on silicon-based gas sensors

    Directory of Open Access Journals (Sweden)

    Tianjian Li

    2015-04-01

    Full Text Available Inkjet printing is a versatile, low cost deposition technology with the capabilities for the localized deposition of high precision, patterned deposition in a programmable way, and the parallel deposition of a variety of materials. This paper demonstrates a new method of modifying the consumer inkjet printer to prepare polymer-sensitive layers on silicon wafer for gas sensor applications. A special printing tray for the modified inkjet printer to support a 4-inch silicon wafer is designed. The positioning accuracy of the deposition system is tested, based on the newly modified printer. The experimental data show that the positioning errors in the horizontal direction are negligibly small, while the positioning errors in the vertical direction rise with the increase of the printing distance of the wafer. The method for making suitable ink to be deposited to form the polymer-sensitive layer is also discussed. In the testing, a solution of 0.1 wt% polyvinyl alcohol (PVA was used as ink to prepare a sensitive layer with certain dimensions at a specific location on the surface of the silicon wafer, and the results prove the feasibility of the methods presented in this article.

  11. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    Directory of Open Access Journals (Sweden)

    Sandro Rao

    2016-01-01

    Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  12. Response time verification of in situ hydraulic pressure sensors in a nuclear reactor

    International Nuclear Information System (INIS)

    Foster, C.G.

    1978-01-01

    A method and apparatus for verifying response time in situ of hydraulic pressure and pressure differential sensing instrumentation in a nuclear circuit is disclosed. Hydraulic pressure at a reference sensor and at an in situ process sensor under test is varied according to a linear ramp. Sensor response time is then determined by comparison of the sensor electrical analog output signals. The process sensor is subjected to a relatively slowly changing and a relatively rapidly changing hydraulic pressure ramp signal to determine an upper bound for process sensor response time over the range of all pressure transients to which the sensor is required to respond. Signal linearity is independent of the volumetric displacement of the process sensor. The hydraulic signal generator includes a first pressurizable gas reservoir, a second pressurizable liquid and gas reservoir, a gate for rapidly opening a gas communication path between the two reservoirs, a throttle valve for regulating rate of gas pressure equalization between the two reservoirs, and hydraulic conduit means for simultaneously communicating a ramp of hydraulic pressure change between the liquid/gas reservoir and both a reference and a process sensor. By maintaining a sufficient pressure differential between the reservoirs and by maintaining a sufficient ratio of gas to liquid in the liquid/gas reservoir, excellent linearity and minimal transient effects can be achieved for all pressure ranges, magnitudes, and rates of change of interest

  13. Non-destructive residual pressure self-measurement method for the sensing chip of optical Fabry-Perot pressure sensor.

    Science.gov (United States)

    Wang, Xue; Wang, Shuang; Jiang, Junfeng; Liu, Kun; Zhang, Xuezhi; Xiao, Mengnan; Xiao, Hai; Liu, Tiegen

    2017-12-11

    We introduce a simple residual pressure self-measurement method for the Fabry-Perot (F-P) cavity of optical MEMS pressure sensor. No extra installation is required and the structure of the sensor is unchanged. In the method, the relationship between residual pressure and external pressure under the same diaphragm deflection condition at different temperatures is analyzed by using the deflection formula of the circular plate with clamped edges and the ideal gas law. Based on this, the residual pressure under the flat condition can be obtained by pressure scanning process and calculation process. We carried out the experiment to compare the residual pressures of two batches MEMS sensors fabricated by two kinds of bonding process. The measurement result indicates that our approach is reliable enough for the measurement.

  14. A Wireless Pressure Sensor Integrated with a Biodegradable Polymer Stent for Biomedical Applications.

    Science.gov (United States)

    Park, Jongsung; Kim, Ji-Kwan; Patil, Swati J; Park, Jun-Kyu; Park, SuA; Lee, Dong-Weon

    2016-06-02

    This paper describes the fabrication and characterization of a wireless pressure sensor for smart stent applications. The micromachined pressure sensor has an area of 3.13 × 3.16 mm² and is fabricated with a photosensitive SU-8 polymer. The wireless pressure sensor comprises a resonant circuit and can be used without the use of an internal power source. The capacitance variations caused by changes in the intravascular pressure shift the resonance frequency of the sensor. This change can be detected using an external antenna, thus enabling the measurement of the pressure changes inside a tube with a simple external circuit. The wireless pressure sensor is capable of measuring pressure from 0 mmHg to 230 mmHg, with a sensitivity of 0.043 MHz/mmHg. The biocompatibility of the pressure sensor was evaluated using cardiac cells isolated from neonatal rat ventricular myocytes. After inserting a metal stent integrated with the pressure sensor into a cardiovascular vessel of an animal, medical systems such as X-ray were employed to consistently monitor the condition of the blood vessel. No abnormality was found in the animal blood vessel for approximately one month. Furthermore, a biodegradable polymer (polycaprolactone) stent was fabricated with a 3D printer. The polymer stent exhibits better sensitivity degradation of the pressure sensor compared to the metal stent.

  15. A Wireless Pressure Sensor Integrated with a Biodegradable Polymer Stent for Biomedical Applications

    Directory of Open Access Journals (Sweden)

    Jongsung Park

    2016-06-01

    Full Text Available This paper describes the fabrication and characterization of a wireless pressure sensor for smart stent applications. The micromachined pressure sensor has an area of 3.13 × 3.16 mm2 and is fabricated with a photosensitive SU-8 polymer. The wireless pressure sensor comprises a resonant circuit and can be used without the use of an internal power source. The capacitance variations caused by changes in the intravascular pressure shift the resonance frequency of the sensor. This change can be detected using an external antenna, thus enabling the measurement of the pressure changes inside a tube with a simple external circuit. The wireless pressure sensor is capable of measuring pressure from 0 mmHg to 230 mmHg, with a sensitivity of 0.043 MHz/mmHg. The biocompatibility of the pressure sensor was evaluated using cardiac cells isolated from neonatal rat ventricular myocytes. After inserting a metal stent integrated with the pressure sensor into a cardiovascular vessel of an animal, medical systems such as X-ray were employed to consistently monitor the condition of the blood vessel. No abnormality was found in the animal blood vessel for approximately one month. Furthermore, a biodegradable polymer (polycaprolactone stent was fabricated with a 3D printer. The polymer stent exhibits better sensitivity degradation of the pressure sensor compared to the metal stent.

  16. Propagation of Radiosonde Pressure Sensor Errors to Ozonesonde Measurements

    Science.gov (United States)

    Stauffer, R. M.; Morris, G.A.; Thompson, A. M.; Joseph, E.; Coetzee, G. J. R.; Nalli, N. R.

    2014-01-01

    Several previous studies highlight pressure (or equivalently, pressure altitude) discrepancies between the radiosonde pressure sensor and that derived from a GPS flown with the radiosonde. The offsets vary during the ascent both in absolute and percent pressure differences. To investigate this problem further, a total of 731 radiosonde-ozonesonde launches from the Southern Hemisphere subtropics to Northern mid-latitudes are considered, with launches between 2005 - 2013 from both longer-term and campaign-based intensive stations. Five series of radiosondes from two manufacturers (International Met Systems: iMet, iMet-P, iMet-S, and Vaisala: RS80-15N and RS92-SGP) are analyzed to determine the magnitude of the pressure offset. Additionally, electrochemical concentration cell (ECC) ozonesondes from three manufacturers (Science Pump Corporation; SPC and ENSCI-Droplet Measurement Technologies; DMT) are analyzed to quantify the effects these offsets have on the calculation of ECC ozone (O3) mixing ratio profiles (O3MR) from the ozonesonde-measured partial pressure. Approximately half of all offsets are 0.6 hPa in the free troposphere, with nearly a third 1.0 hPa at 26 km, where the 1.0 hPa error represents 5 persent of the total atmospheric pressure. Pressure offsets have negligible effects on O3MR below 20 km (96 percent of launches lie within 5 percent O3MR error at 20 km). Ozone mixing ratio errors above 10 hPa (30 km), can approach greater than 10 percent ( 25 percent of launches that reach 30 km exceed this threshold). These errors cause disagreement between the integrated ozonesonde-only column O3 from the GPS and radiosonde pressure profile by an average of +6.5 DU. Comparisons of total column O3 between the GPS and radiosonde pressure profiles yield average differences of +1.1 DU when the O3 is integrated to burst with addition of the McPeters and Labow (2012) above-burst O3 column climatology. Total column differences are reduced to an average of -0.5 DU when

  17. A minimally invasive in-fiber Bragg grating sensor for intervertebral disc pressure measurements

    International Nuclear Information System (INIS)

    Dennison, Christopher R; Wild, Peter M; Wilson, David R; Cripton, Peter A

    2008-01-01

    We present an in-fiber Bragg grating (FBG) based intervertebral disc (IVD) pressure sensor that has pressure sensitivity seven times greater than that of a bare fiber, and a major diameter and sensing area of only 400 µm and 0.03 mm 2 , respectively. This is the only optical, the smallest and the most mechanically compliant disc pressure sensor reported in the literature. This is also an improvement over other FBG pressure sensors that achieve increased sensitivity through mechanical amplification schemes, usually resulting in major diameters and sensing lengths of many millimeters. Sensor sensitivity is predicted using numerical models, and the predicted sensitivity is verified through experimental calibrations. The sensor is validated by conducting IVD pressure measurements in porcine discs and comparing the FBG measurements to those obtained using the current standard sensor for IVD pressure. The predicted sensitivity of the FBG sensor matched with that measured experimentally. IVD pressure measurements showed excellent repeatability and agreement with those obtained from the standard sensor. Unlike the current larger sensors, the FBG sensor could be used in discs with small disc height (i.e. cervical or degenerated discs). Therefore, there is potential to conduct new measurements that could lead to new understanding of the biomechanics

  18. Redesigned Gas Mass Flow Sensors for Space Shuttle Pressure Control System and Fuel Cell System

    Science.gov (United States)

    1996-01-01

    A program was conducted to determine if a state of the art micro-machined silicon solid state flow sensor could be used to replace the existing space shuttle orbiter flow sensors. The rather aggressive goal was to obtain a new sensor which would also be a multi-gas sensor and operate over a much wider flow range and with a higher degree of accuracy than the existing sensors. Two types of sensors were tested. The first type was a venturi throat design and the second was a bypass design. The accuracy of venturi design was found to be marginally acceptable. The bypass sensor was much better although it still did not fully reach the accuracy goal. Two main problems were identified which would require further work.

  19. A Revival of Waste: Atmospheric Pressure Nitrogen Plasma Jet Enhanced Jumbo Silicon/Silicon Carbide Composite in Lithium Ion Batteries.

    Science.gov (United States)

    Chen, Bing-Hong; Chuang, Shang-I; Liu, Wei-Ren; Duh, Jenq-Gong

    2015-12-30

    In this study, a jumbo silicon/silicon carbide (Si/SiC) composite (JSC), a novel anode material source, was extracted from solar power industry cutting waste and used as a material for lithium-ion batteries (LIBs), instead of manufacturing the nanolized-Si. Unlike previous methods used for preventing volume expansion and solid electrolyte interphase (SEI), the approach proposed here simply entails applying surface modification to JSC-based electrodes by using nitrogen-atmospheric pressure plasma jet (N-APPJ) treatment process. Surface organic bonds were rearranged and N-doped compounds were formed on the electrodes through applying different plasma treatment durations, and the qualitative examinations of before/after plasma treatment were identified by X-ray photoelectron spectroscopy (XPS) and electron probe microanalyzer (EPMA). The surface modification resulted in the enhancement of electrochemical performance with stable capacity retention and high Coulombic efficiency. In addition, depth profile and scanning electron microscope (SEM) images were executed to determine the existence of Li-N matrix and how the nitrogen compounds change the surface conditions of the electrodes. The N-APPJ-induced rapid surface modification is a major breakthrough for processing recycled waste that can serve as anode materials for next-generation high-performance LIBs.

  20. High Accuracy, Miniature Pressure Sensor for Very High Temperatures, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — SiWave proposes to develop a compact, low-cost MEMS-based pressure sensor for very high temperatures and low pressures in hypersonic wind tunnels. Most currently...

  1. A highly sensitive, low-cost, wearable pressure sensor based on conductive hydrogel spheres

    KAUST Repository

    Tai, Yanlong; Mulle, Matthieu; Ventura, Isaac Aguilar; Lubineau, Gilles

    2015-01-01

    Wearable pressure sensing solutions have promising future for practical applications in health monitoring and human/machine interfaces. Here, a highly sensitive, low-cost, wearable pressure sensor based on conductive single-walled carbon nanotube

  2. Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

    Science.gov (United States)

    Ji, Xiaoyu; Cheng, Hiu Yan; Grede, Alex J.; Molina, Alex; Talreja, Disha; Mohney, Suzanne E.; Giebink, Noel C.; Badding, John V.; Gopalan, Venkatraman

    2018-04-01

    Conformally coating textured, high surface area substrates with high quality semiconductors is challenging. Here, we show that a high pressure chemical vapor deposition process can be employed to conformally coat the individual fibers of several types of flexible fabrics (cotton, carbon, steel) with electronically or optoelectronically active materials. The high pressure (˜30 MPa) significantly increases the deposition rate at low temperatures. As a result, it becomes possible to deposit technologically important hydrogenated amorphous silicon (a-Si:H) from silane by a simple and very practical pyrolysis process without the use of plasma, photochemical, hot-wire, or other forms of activation. By confining gas phase reactions in microscale reactors, we show that the formation of undesired particles is inhibited within the microscale spaces between the individual wires in the fabric structures. Such a conformal coating approach enables the direct fabrication of hydrogenated amorphous silicon-based Schottky junction devices on a stainless steel fabric functioning as a solar fabric.

  3. Novel High Temperature Capacitive Pressure Sensor Utilizing SiC Integrated Circuit Twin Ring Oscillators

    Science.gov (United States)

    Scardelletti, M.; Neudeck, P.; Spry, D.; Meredith, R.; Jordan, J.; Prokop, N.; Krasowski, M.; Beheim, G.; Hunter, G.

    2017-01-01

    This paper describes initial development and testing of a novel high temperature capacitive pressure sensor system. The pressure sensor system consists of two 4H-SiC 11-stage ring oscillators and a SiCN capacitive pressure sensor. One oscillator has the capacitive pressure sensor fixed at one node in its feedback loop and varies as a function of pressure and temperature while the other provides a pressure-independent reference frequency which can be used to temperature compensate the output of the first oscillator. A two-day repeatability test was performed up to 500C on the oscillators and the oscillator fundamental frequency changed by only 1. The SiCN capacitive pressure sensor was characterized at room temperature from 0 to 300 psi. The sensor had an initial capacitance of 3.76 pF at 0 psi and 1.75 pF at 300 psi corresponding to a 54 change in capacitance. The integrated pressure sensor system was characterized from 0 to 300 psi in steps of 50 psi over a temperature range of 25 to 500C. The pressure sensor system sensitivity was 0.113 kHzpsi at 25C and 0.026 kHzpsi at 500C.

  4. Conception and preliminary evaluation of an optical fibre sensor for simultaneous measurement of pressure and temperature

    International Nuclear Information System (INIS)

    Bremer, K; Moss, B; Leen, G; Mueller, I; Lewis, E; Lochmann, S

    2009-01-01

    This paper presents a novel concept of simultaneously measuring pressure and temperature using a silica optical fibre extrinsic Fabry-Perot interferometric (EFPI) pressure sensor incorporating a fibre Bragg grating (FBG), which is constructed entirely from fused-silica. The novel device is used to simultaneously provide accurate pressure and temperature readings at the point of measurement. Furthermore, the FBG temperature measurement is used to eliminate the temperature cross-sensitivity of the EFPI pressure sensor.

  5. Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

    Science.gov (United States)

    Atiwongsangthong, Narin

    2012-08-01

    The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

  6. Integrated arrays of air-dielectric graphene transistors as transparent active-matrix pressure sensors for wide pressure ranges.

    Science.gov (United States)

    Shin, Sung-Ho; Ji, Sangyoon; Choi, Seiho; Pyo, Kyoung-Hee; Wan An, Byeong; Park, Jihun; Kim, Joohee; Kim, Ju-Young; Lee, Ki-Suk; Kwon, Soon-Yong; Heo, Jaeyeong; Park, Byong-Guk; Park, Jang-Ung

    2017-03-31

    Integrated electronic circuitries with pressure sensors have been extensively researched as a key component for emerging electronics applications such as electronic skins and health-monitoring devices. Although existing pressure sensors display high sensitivities, they can only be used for specific purposes due to the narrow range of detectable pressure (under tens of kPa) and the difficulty of forming highly integrated arrays. However, it is essential to develop tactile pressure sensors with a wide pressure range in order to use them for diverse application areas including medical diagnosis, robotics or automotive electronics. Here we report an unconventional approach for fabricating fully integrated active-matrix arrays of pressure-sensitive graphene transistors with air-dielectric layers simply formed by folding two opposing panels. Furthermore, this realizes a wide tactile pressure sensing range from 250 Pa to ∼3 MPa. Additionally, fabrication of pressure sensor arrays and transparent pressure sensors are demonstrated, suggesting their substantial promise as next-generation electronics.

  7. Pressure-induced transformations in amorphous silicon: A computational study

    Energy Technology Data Exchange (ETDEWEB)

    Garcez, K. M. S., E-mail: kmgarcez@ufma.br [Universidade Federal do Maranhão, 65700-000 Bacabal, Maranhão (Brazil); Antonelli, A., E-mail: aantone@ifi.unicamp.br [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, UNICAMP, 13083-859 Campinas, São Paulo (Brazil)

    2014-02-14

    We study the transformations between amorphous phases of Si through molecular simulations using the environment dependent interatomic potential (EDIP) for Si. Our results show that upon pressure, the material undergoes a transformation from the low density amorphous (LDA) Si to the high density amorphous (HDA) Si. This transformation can be reversed by decompressing the material. This process, however, exhibits clear hysteresis, suggesting that the transformation LDA ↔ HDA is first-order like. The HDA phase is predominantly five-fold coordinated, whereas the LDA phase is the normal tetrahedrally bonded amorphous Si. The HDA phase at 400 K and 20 GPa was submitted to an isobaric annealing up to 800 K, resulting in a denser amorphous phase, which is structurally distinct from the HDA phase. Our results also show that the atomic volume and structure of this new amorphous phase are identical to those of the glass obtained by an isobaric quenching of the liquid in equilibrium at 2000 K and 20 GPa down to 400 K. The similarities between our results and those for amorphous ices suggest that this new phase is the very high density amorphous Si.

  8. Pressure-induced transformations in amorphous silicon: A computational study

    Science.gov (United States)

    Garcez, K. M. S.; Antonelli, A.

    2014-02-01

    We study the transformations between amorphous phases of Si through molecular simulations using the environment dependent interatomic potential (EDIP) for Si. Our results show that upon pressure, the material undergoes a transformation from the low density amorphous (LDA) Si to the high density amorphous (HDA) Si. This transformation can be reversed by decompressing the material. This process, however, exhibits clear hysteresis, suggesting that the transformation LDA ↔ HDA is first-order like. The HDA phase is predominantly five-fold coordinated, whereas the LDA phase is the normal tetrahedrally bonded amorphous Si. The HDA phase at 400 K and 20 GPa was submitted to an isobaric annealing up to 800 K, resulting in a denser amorphous phase, which is structurally distinct from the HDA phase. Our results also show that the atomic volume and structure of this new amorphous phase are identical to those of the glass obtained by an isobaric quenching of the liquid in equilibrium at 2000 K and 20 GPa down to 400 K. The similarities between our results and those for amorphous ices suggest that this new phase is the very high density amorphous Si.

  9. Measurements of the reverse current of highly irradiated silicon sensors to determine the effective energy and current related damage rate

    Science.gov (United States)

    Wiehe, Moritz; Wonsak, S.; Kuehn, S.; Parzefall, U.; Casse, G.

    2018-01-01

    The reverse current of irradiated silicon sensors leads to self heating of the sensor and degrades the signal to noise ratio of a detector. Precise knowledge of the expected reverse current during detector operation is crucial for planning and running experiments in High Energy Physics. The dependence of the reverse current on sensor temperature and irradiation fluence is parametrized by the effective energy and the current related damage rate, respectively. In this study 18 n-in-p mini silicon strip sensors from companies Hamamatsu Photonics and Micron Semiconductor Ltd. were deployed. Measurements of the reverse current for different bias voltages were performed at temperatures of -32 ° C, -27 ° C and -23 ° C. The sensors were irradiated with reactor neutrons in Ljubljana to fluences ranging from 2 × 1014neq /cm2 to 2 × 1016neq /cm2. The measurements were performed directly after irradiation and after 10 and 30 days of room temperature annealing. The aim of the study presented in this paper is to investigate the reverse current of silicon sensors for high fluences of up to 2 × 1016neq /cm2 and compare the measurements to the parametrization models.

  10. Miniaturised Prandtl tube with integrated pressure sensors for micro-thruster plume characterisation

    NARCIS (Netherlands)

    Dijkstra, Marcel; Ma, Kechun; de Boer, Meint J.; Groenesteijn, Jarno; Lötters, Joost Conrad; Wiegerink, Remco J.

    2014-01-01

    A miniaturised Prandtl-tube sensor incorporating a 6 mm long 40 μm diameter microchannel with integrated pressure sensors has been realised. The sensor has been designed for the characterisation of rarefied plume flow from a MEMS-based monopropellant propulsion system for high-accuracy attitude

  11. Design of an osmotic pressure sensor for sensing an osmotically active substance

    International Nuclear Information System (INIS)

    Ch, Nagesh; Paily, Roy P

    2015-01-01

    A pressure sensor based on the osmosis principle has been designed and demonstrated successfully for the sensing of the concentration levels of an osmotically active substance. The device is fabricated using the bulk micro-machining technique on a silicon on insulator (SOI) substrate. The substrate has a square cavity on the bottom side to fill with the reference glucose solution and a silicon (Si) membrane on the top side for the actuation. Two sets of devices, having membrane thicknesses of 10 µm and 25 µm, but the same area of 3 mm ×3 mm, are fabricated. The cavity is filled with a glucose solution of 100 mg dL −1 and it is sealed with a semi-permeable membrane made up of cellulose acetate material. The glucose solution is employed to prove the functionality of the device and it is tested for different glucose concentration levels, ranging from 50 mg dL −1 to 450 mg dL −1 . The output voltage obtained for the corresponding glucose concentration levels ranges from −6.7 mV to 22.7 mV for the 10 µm device and from −1.7 mV to 4 mV for the 25 µm device. The device operation was simulated using the finite element method (FEM) and the finite volume method (FVM), and the simulation and experimental results match closely. A response time of 40 min is obtained in the case of the 10 µm device compared to one of 30 min for the 25 µm device. The response times obtained for these devices are found to be small compared to those in similar works based on the osmosis principle. This pressure sensor has the potential to provide controlled drug delivery if it can be integrated with other microfluidic devices. (paper)

  12. Evaluation of the performance of irradiated silicon strip sensors for the forward detector of the ATLAS Inner Tracker Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Mori, R., E-mail: riccardo.mori@physik.uni-freiburg.de [Physikalisches Institut, Universität Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Allport, P.P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J.P.; Wilson, J.A. [School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT (United Kingdom); Kierstead, J.; Kuczewski, P.; Lynn, D. [Brookhaven National Laboratory, Physics Department and Instrumentation Division, Upton, NY 11973-5000 (United States); Arratia-Munoz, M.I.; Hommels, L.B.A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ullan, M.; Fleta, C.; Fernandez-Tejero, J. [Centro Nacional de Microelectronica (IMB-CNM, CSIC), Campus UAB-Bellaterra, 08193 Barcelona (Spain); Bloch, I.; Gregor, I.M.; Lohwasser, K. [DESY, Notkestrasse 85, 22607 Hambrug (Germany); and others

    2016-09-21

    The upgrade to the High-Luminosity LHC foreseen in about ten years represents a great challenge for the ATLAS inner tracker and the silicon strip sensors in the forward region. Several strip sensor designs were developed by the ATLAS collaboration and fabricated by Hamamatsu in order to maintain enough performance in terms of charge collection efficiency and its uniformity throughout the active region. Of particular attention, in the case of a stereo-strip sensor, is the area near the sensor edge where shorter strips were ganged to the complete ones. In this work the electrical and charge collection test results on irradiated miniature sensors with forward geometry are presented. Results from charge collection efficiency measurements show that at the maximum expected fluence, the collected charge is roughly halved with respect to the one obtained prior to irradiation. Laser measurements show a good signal uniformity over the sensor. Ganged strips have a similar efficiency as standard strips.

  13. MIS gas sensors based on porous silicon with Pd and WO{sub 3}/Pd electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Solntsev, V.S. [Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028, Kiev (Ukraine); Gorbanyuk, T.I., E-mail: tatyanagor@mail.r [Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028, Kiev (Ukraine); Litovchenko, V.G.; Evtukh, A.A. [Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028, Kiev (Ukraine)

    2009-09-30

    Pd and WO{sub 3}/Pd gate metal-oxide-semiconductor (MIS) gas sensitive structures based on porous silicon layers are studied by the high frequency C(V) method. The chemical compositions of composite WO{sub 3}/Pd electrodes are characterized by secondary-ion mass spectrometry (SIMS). The atomic force microscopy (AFM) was used for morphologic studies of WO{sub 3}/Pd films. As shown in the experiments, WO{sub 3}/Pd structures are more sensitive and selective to the adsorption of hydrogen sulphide compared to Pd gate. The analyses of kinetic characteristics allow us to determine the response and characteristic times for these structures. The response time of MIS-structures with thin composite WO{sub 3}/Pd electrodes (the thickness of Pd is about 50 nm with WO{sub 3} clusters on its surface) is slower compared to the structures with Pd electrodes. Slower sensor responses of WO{sub 3}-based gas sensors may be associated with different mechanism of gas sensitivity of given structures. The enhanced sensitivity and selectivity to H{sub 2}S action of WO{sub 3}/Pd MIS-structures can also be explained by the chemical reaction that occurs at the catalytic active surface of gate electrodes. The possible mechanisms of enhanced sensitivity and selectivity to H{sub 2}S adsorption of MIS gas sensors with WO{sub 3}/Pd composite gate electrodes compared to pure Pd have been analyzed.

  14. Sensitivity enhancement using annealed polymer optical fibre based sensors for pressure sensing applications

    DEFF Research Database (Denmark)

    Pospori, A.; Marques, C. A. F.; Saez-Rodriguez, D.

    2016-01-01

    for that investigation was an unexpected behaviour observed in an array of sensors which were used for liquid level monitoring. One sensor exhibited much lower pressure sensitivity and that was the only one that was not annealed. To further investigate the phenomenon, additional sensors were photo...... sensitivity of the devices. This can provide better performing sensors for use in stress, force and pressure sensing applications.......Thermal annealing can be used to induce a permanent negative Bragg wavelength shift for polymer fibre grating sensors and it was originally used for multiplexing purposes. Recently, researchers showed that annealing can also provide additional benefits, such as strain and humidity sensitivity...

  15. All-Optical Frequency Modulated High Pressure MEMS Sensor for Remote and Distributed Sensing

    DEFF Research Database (Denmark)

    Reck, Kasper; Thomsen, Erik Vilain; Hansen, Ole

    2011-01-01

    We present the design, fabrication and characterization of a new all-optical frequency modulated pressure sensor. Using the tangential strain in a circular membrane, a waveguide with an integrated nanoscale Bragg grating is strained longitudinally proportional to the applied pressure causing...... a shift in the Bragg wavelength. The simple and robust design combined with the small chip area of 1 × 1.8 mm2 makes the sensor ideally suited for remote and distributed sensing in harsh environments and where miniaturized sensors are required. The sensor is designed for high pressure applications up...

  16. Design and evaluation of a pressure sensor for high temperature nuclear application

    International Nuclear Information System (INIS)

    Yancey, M.E.

    1981-11-01

    The goal of this technical development task was the development of a small eddy-current pressure sensor for use within a high temperature nuclear environment. The sensor is designed for use at pressures and temperatures of up to 17.23 MPa and 650 0 F. The design of the sensor incorporated features to minimize possible errors due to temperature transients present in nuclear applications. This report describes a prototype pressure sensor that was designed, the associated 100 kHz signal conditioning electronics, and the evaluation tests which were conducted

  17. Ring-shaped inductive sensor design and application to pressure sensing

    Energy Technology Data Exchange (ETDEWEB)

    Noh, Myoung Gyu; Baek, Seong Ki; Park, Young Woo [Dept. of Mechatronics Engineering, Chungnam National University, Daejeon (Korea, Republic of); Kim, Sun Young [Samsung Electro-Mechanics, Busan (Korea, Republic of)

    2015-10-15

    Inductive sensors are versatile and economical devices that are widely used to measure a wide variety of physical variables, such as displacement, force, and pressure. In this paper, we propose a simple inductive sensor consisting of a thin partial ring and a coil set. The self-inductance of the sensor was estimated using magnetic circuit analysis and validated through finite element analysis (FEA). The natural frequency of the ring was estimated using Castigliano's theorem and the method of equivalent mass. The estimation was validated through experiments and FEA. A prototype sensor with a signal processing circuit is built and applied to noninvasively sense the pressure inside a flexible tube. The obtained sensor outputs show quadratic behavior with respect to the pressure. When fitted to a quadratic equation, the least-square measurement error was less than 2%. The results confirm the feasibility of pressure sensing using the proposed inductive sensor.

  18. Embedding of MEMS pressure and temperature sensors in carbon fiber composites: a manufacturing approach

    Science.gov (United States)

    Javidinejad, Amir; Joshi, Shiv P.

    2000-06-01

    In this paper embedding of surface mount pressure and temperature sensors in the Carbon fiber composites are described. A commercially available surface mount pressure and temperature sensor are used for embedding in a composite lay- up of IM6/HST-7, IM6/3501 and AS4/E7T1-2 prepregs. The fabrication techniques developed here are the focus of this paper and provide for a successful embedding procedure of pressure sensors in fibrous composites. The techniques for positioning and insulating, the sensor and the lead wires, from the conductive carbon prepregs are described and illustrated. Procedural techniques are developed and discussed for isolating the sensor's flow-opening, from the exposure to the prepreg epoxy flow and exposure to the fibrous particles, during the autoclave curing of the composite laminate. The effects of the autoclave cycle (if any) on the operation of the embedded pressure sensor are discussed.

  19. Ring-shaped inductive sensor design and application to pressure sensing

    International Nuclear Information System (INIS)

    Noh, Myoung Gyu; Baek, Seong Ki; Park, Young Woo; Kim, Sun Young

    2015-01-01

    Inductive sensors are versatile and economical devices that are widely used to measure a wide variety of physical variables, such as displacement, force, and pressure. In this paper, we propose a simple inductive sensor consisting of a thin partial ring and a coil set. The self-inductance of the sensor was estimated using magnetic circuit analysis and validated through finite element analysis (FEA). The natural frequency of the ring was estimated using Castigliano's theorem and the method of equivalent mass. The estimation was validated through experiments and FEA. A prototype sensor with a signal processing circuit is built and applied to noninvasively sense the pressure inside a flexible tube. The obtained sensor outputs show quadratic behavior with respect to the pressure. When fitted to a quadratic equation, the least-square measurement error was less than 2%. The results confirm the feasibility of pressure sensing using the proposed inductive sensor

  20. Epidermis Microstructure Inspired Graphene Pressure Sensor with Random Distributed Spinosum for High Sensitivity and Large Linearity.

    Science.gov (United States)

    Pang, Yu; Zhang, Kunning; Yang, Zhen; Jiang, Song; Ju, Zhenyi; Li, Yuxing; Wang, Xuefeng; Wang, Danyang; Jian, Muqiang; Zhang, Yingying; Liang, Renrong; Tian, He; Yang, Yi; Ren, Tian-Ling

    2018-03-27

    Recently, wearable pressure sensors have attracted tremendous attention because of their potential applications in monitoring physiological signals for human healthcare. Sensitivity and linearity are the two most essential parameters for pressure sensors. Although various designed micro/nanostructure morphologies have been introduced, the trade-off between sensitivity and linearity has not been well balanced. Human skin, which contains force receptors in a reticular layer, has a high sensitivity even for large external stimuli. Herein, inspired by the skin epidermis with high-performance force sensing, we have proposed a special surface morphology with spinosum microstructure of random distribution via the combination of an abrasive paper template and reduced graphene oxide. The sensitivity of the graphene pressure sensor with random distribution spinosum (RDS) microstructure is as high as 25.1 kPa -1 in a wide linearity range of 0-2.6 kPa. Our pressure sensor exhibits superior comprehensive properties compared with previous surface-modified pressure sensors. According to simulation and mechanism analyses, the spinosum microstructure and random distribution contribute to the high sensitivity and large linearity range, respectively. In addition, the pressure sensor shows promising potential in detecting human physiological signals, such as heartbeat, respiration, phonation, and human motions of a pushup, arm bending, and walking. The wearable pressure sensor array was further used to detect gait states of supination, neutral, and pronation. The RDS microstructure provides an alternative strategy to improve the performance of pressure sensors and extend their potential applications in monitoring human activities.