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Sample records for silicon positron thermalization

  1. Porous silicon investigated by positron annihilation

    International Nuclear Information System (INIS)

    Cruz, R.M. de la; Pareja, R.

    1989-01-01

    The effect of the anodic conversion in silicon single crystals is investigated by positron lifetime measurements. Anodization at constant current induces changes in the positron lifetime spectrum of monocrystalline silicon samples. It is found that theses changes are primarily dependent on the silicon resistivity. The annihilation parameter behaviour of anodized samples, treated at high temperature under reducing conditions, is also investigated. The results reveal that positron annihilation can be a useful technique to characterize porous silicon formed by anodizing as well as to investigate its thermal behaviour. (author)

  2. Positron annihilation lifetime in float-zone n-type silicon irradiated by fast electrons: a thermally stable vacancy defect

    International Nuclear Information System (INIS)

    Arutyunov, Nikolay; Emtsev, Vadim; Oganesyan, Gagik; Krause-Rehberg, Reinhard; Elsayed, Mohamed; Kozlovskii, Vitalii

    2016-01-01

    Temperature dependency of the average positron lifetime has been investigated for n-type float-zone silicon, n-FZ-Si(P), subjected to irradiation with 0.9 MeV electrons at RT. In the course of the isochronal annealing a new defect-related temperature-dependent pattern of the positron lifetime spectra has been revealed. Beyond the well known intervals of isochronal annealing of acceptor-like defects such as E-centers, divacancies and A-centers, the positron annihilation at the vacancy defects has been observed in the course of the isochronal annealing from ∝ 320 C up to the limit of reliable detecting of the defect-related positron annihilation lifetime at ≥ 500 C. These data correlate with the ones of recovery of the concentration of the charge carriers and their mobility which is found to continue in the course of annealing to ∝ 570 C; the annealing is accomplished at ∝650 C. A thermally stable complex consisting of the open vacancy volume and the phosphorus impurity atom, V_o_p-P, is suggested as a possible candidate for interpreting the data obtained by the positron annihilation lifetime spectroscopy. An extended couple of semi-vacancies, 2V_s_-_e_x_t, as well as a relaxed inwards a couple of vacancies, 2V_i_n_w, are suggested as the open vacancy volume V_o_p to be probed with the positron. It is argued that a high thermal stability of the V_s_-_e_x_t PV_s_-_e_x_t (or V_i_n_wPV_i_n_w_.) configuration is contributed by the efficiency of PSi_5 bonding. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. A study of positron irradiated porous silicon

    International Nuclear Information System (INIS)

    Huang Yuanming; Xue Qing; Zhai Baogai; Xu Aijun; Liu Shewen; Yu Weizhong

    1998-01-01

    The effect of positron irradiation on photoluminescence (PL) of porous silicon has been studied. After four hour positron irradiation, the red PL spectrum of porous silicon blue shifts into greenish spectral region, and a higher energy luminescence band is introduced into this blueshifted spectrum. The fourier transform infrared absorption experiment shows that the positron irradiation can cause further oxidization of porous silicon. A possible mechanism causing this change of PL spectra after positron irradiation is suggested

  4. Positron effective mass in silicon

    International Nuclear Information System (INIS)

    Panda, B.K.; Shan, Y.Y.; Fung, S.; Beling, C.D.

    1995-01-01

    The positron effective mass in Si is obtained from the first-principles calculations along various crystallographic directions. The effect of electron-positron correlation on the band mass is examined in this work. A positron pseudopotential scheme is worked out to calculate the isotropic band mass without explicitly solving the band energy. The effective mass 1.46m obtained as a sum of band mass and the positron-plasmon interaction compares very well with 1.5m obtained from the positron mobility data

  5. Positron annihilation spectroscopy study of porous silicon

    International Nuclear Information System (INIS)

    Britkov, O.M.; Gavrilov, S.A.; Kalugin, V.V.; Timoshenkov, S.P.; Grafutin, V.I.; Ilyukhina, O.V.; Myasishcheva, G.G.; Prokop'ev, E.P.; Funtikov, Yu.V.

    2007-01-01

    Experimental studies of porous silicon by means of a standard positron annihilation technique based on measuring the angular distribution of annihilation photons, are reported. It was shown that the spectra of angular correlation of annihilation radiation in porous silicon are approximated well by a parabola (I p ) and two Gaussians (I g1 , I g2 ). The narrow Gaussian component I g1 is most likely due to the annihilation of localized para-positronium in pores. The full width at half maximum is on the order of 0.8 mrad, a value that corresponds to the kinetic energy of an annihilating positron-electron pair (0.079 ± 0.012 eV), and its intensity is about 1.5%. The total positronium yield in porous silicon reaches 6% in this case. The particle radius determined in the study is about 10-20 A [ru

  6. Amorphous silicon detectors in positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Conti, M. (Istituto Nazionale di Fisica Nucleare, Pisa (Italy) Lawrence Berkeley Lab., CA (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  7. Amorphous silicon detectors in positron emission tomography

    International Nuclear Information System (INIS)

    Conti, M.; Perez-Mendez, V.

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters ε 2 τ's are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs

  8. Depth profiling of boron implanted silicon by positron beam

    International Nuclear Information System (INIS)

    Oevuenc, S.

    2004-01-01

    Positron depth profiling analyses of low energy implants of silicon aim to observe tbe structure and density of the vacancies generating by implantation and the effect of annealing. This work present the results to several set of data starting S and W parameters. Boron implanted Silicon samples with different implantation energies,20,22,24,and 26 keV are analyzed by Slow positron beam (0-40 keV and 10 5 e + /s )(Variable Energy Positron) at the Positron Centre Delf-HOLLAND

  9. Thermal carbonization of nanoporous silicon

    Indian Academy of Sciences (India)

    An interesting phenomenon is observed while carrying out thermal carbonization of porous silicon (PS) with an aim to arrest the natural surface degradation, and it is a burning issue for PS-based device applications. A tubular carbon structure has been observed on the PS surface. Raman, Fourier transform infrared ...

  10. Positron annihilation studies of high dose Sb implanted silicon

    International Nuclear Information System (INIS)

    Schut, H.; Eijt, S.W.H.; Beling, C.D.; Ho, K.; Takamura, Y.

    2005-01-01

    The formation and evolution of vacancies and precipitates created by implantation of 60 keV, 2 x 10 16 cm -2 Sb + in pre-amorphized (0 0 1) Cz-Si is studied using the Doppler broadening (DB) and two-dimensional angular correlation of annihilation radiation (2D-ACAR) positron beam techniques. After implantation, samples were laser annealed (LTA) and subsequently thermal annealed at temperatures ranging from 400 to 1000 deg. C. Implantation-induced vacancy-type defects were detected up to a depth of 280 nm. After LTA, positron annihilation related to both Sb and remaining defects is observed in the first 100 nm below the surface. The deeper region only shows positron trapping at vacancy-type defects with strong reduced concentration. Complete removal is obtained after 600 deg. C anneal. At this temperature, the positron data for the upper region reveals trapping at Sb and Si sites only. With increasing annealing time (at 600 deg. C) or increasing temperature (up to 1000 deg. C) positron annihilation at Sb-sites associated with neighboring vacancies becomes apparent. Results are correlated with the observed Sb electrical deactivation above 600 deg. C, the shift from small Sb aggregates to precipitates and out-diffusion of Sb from the implantation region at higher temperatures

  11. Positron annihilation in germanium in thermal equilibrium at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Moriya, Tsuyoshi; Komuro, Naoyuki; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kawano, Takao; Ikari, Atsushi

    1996-09-01

    Annihilation characteristics of positrons in Ge in thermal equilibrium at high temperature were studied using a monoenergetic positron beam. Precise measurements of Doppler broadening profiles of annihilation radiation were performed in the temperature range between 300 K and 1211 K. The line shape parameters of Doppler broadening profiles were found to be almost constant at 300-600 K. The changes in these parameters were observed to start above 600 K. This was attributed to both the decrease in the fraction of positrons annihilating with core electrons and the lowering of the crystal symmetry around the region detected by positron-electron pairs. This suggests that behaviors of positrons are dominated by some form of positron-lattice coupling in Ge at high temperatures. The temperature dependence of the diffusion length of positrons was also discussed. (author)

  12. Density gradient in SiO 2 films on silicon as revealed by positron annihilation spectroscopy

    Science.gov (United States)

    Revesz, A. G.; Anwand, W.; Brauer, G.; Hughes, H. L.; Skorupa, W.

    2002-06-01

    Positron annihilation spectroscopy of thermally grown and deposited SiO 2 films on silicon shows in a non-destructive manner that these films have a gradient in their density. The gradient is most pronounced for the oxide grown in dry oxygen. Oxidation in water-containing ambient results in an oxide with reduced gradient, similarly to the gradient in the deposited oxide. These observations are in accordance with earlier optical and other studies using stepwise etching or a set of samples of varying thickness. The effective oxygen charge, which is very likely one of the reasons for the difference in the W parameters of silica glass and quartz crystal, could be even higher at some localized configurations in the SiO 2 films resulting in increased positron trapping.

  13. Defects in Czochralski-grown silicon crystals investigated by positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Ikari, Atsushi; Kawakami, Kazuto; Haga, Hiroyo [Nippon Steel Corp., Sagamihara, Kanagawa (Japan). Electronics Research Labs.; Uedono, Akira; Wei, Long; Kawano, Takao; Tanigawa, Shoichiro

    1994-10-01

    Positron lifetime and Doppler broadening experiments were performed on Czochralski-grown silicon crystals. A monoenergetic positron beam was also used to measure the diffusion length of positrons in the wafer. From the measurements, it was observed that the value of diffusion length of positrons decreased at the region where microdefects were formed during the crystal growth process. It was also found that the line shape parameter S decreased and the lifetime of positrons increased at the region. These results can be attributed to the annihilation of positrons trapped by vacancy oxygen complexes which are formed in association with the microdefects. (author).

  14. Annihilation of unthermalized positrons in a silicon single crystal at 770K

    International Nuclear Information System (INIS)

    Zaitsev, Yu.E.; Mungir, L.; Ue'pe, L.R.

    1984-01-01

    A model is considered for the annihilation of nonrelativistic positrons from quantized states in lattice channels. Annihilation gamma rays of energy over 511 keV have been observed when the positrons from an Na 22 source strike a silicon single crystal at 77 0 K. The experimental results agree well with the proposed model

  15. Probing the formation of silicon nano-crystals (Si-ncs) using variable energy positron annihilation spectroscopy

    Science.gov (United States)

    Knights, A. P.; Bradley, J. D. B.; Hulko, O.; Stevanovic, D. V.; Edwards, C. J.; Kallis, A.; Coleman, P. G.; Crowe, I. F.; Halsall, M. P.; Gwilliam, R. M.

    2011-01-01

    We describe preliminary results from studies of the formation of silicon nano-crystals (Si-ncs) embedded in stoichiometric, thermally grown SiO2 using Variable Energy Positron Annihilation Spectroscopy (VEPAS). We show that the VEPAS technique is able to monitor the introduction of structural damage. In SiO2 through the high dose Si+ ion implantation required to introduce excess silicon as a precursor to Si-nc formation. VEPAS is also able to characterize the rate of the removal of this damage with high temperature annealing, showing strong correlation with photoluminescence. Finally, VEPAS is shown to be able to selectively probe the interface between Si-ncs and the host oxide. Introduction of hydrogen at these interfaces suppresses the trapping of positrons at the interfaces.

  16. Thermal equilibrium defects in anthracene probed by positron annihilation

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro; Tachibana, Masaru; Shimizu, Mikio; Satoh, Masaaki; Kojima, Kenichi; Ishibashi, Shoji; Kawano, Takao.

    1996-01-01

    Defects in anthracene were investigated by the positron annihilation technique. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured in the temperature range between 305 K and 516 K. The lifetime of positrons annihilated from the delocalized state was determined to be 0.306 ns around room temperature. Below the melting point, the observed temperature dependence of the line shape parameter S was explained assuming the formation energy of thermal equilibrium defects was 1 eV. Above the melting point, the pick-off annihilation of ortho-positronium in open spaces was observed, where the size of these spaces was estimated to be 0.2 nm 3 . The annihilation of positrons from the self-trapped state was also discussed. (author)

  17. Thermal equilibrium defects in anthracene probed by positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Tachibana, Masaru; Shimizu, Mikio; Satoh, Masaaki; Kojima, Kenichi; Ishibashi, Shoji; Kawano, Takao

    1996-06-01

    Defects in anthracene were investigated by the positron annihilation technique. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured in the temperature range between 305 K and 516 K. The lifetime of positrons annihilated from the delocalized state was determined to be 0.306 ns around room temperature. Below the melting point, the observed temperature dependence of the line shape parameter S was explained assuming the formation energy of thermal equilibrium defects was 1 eV. Above the melting point, the pick-off annihilation of ortho-positronium in open spaces was observed, where the size of these spaces was estimated to be 0.2 nm{sup 3}. The annihilation of positrons from the self-trapped state was also discussed. (author)

  18. Optical and microstructural characterization of porous silicon using photoluminescence, SEM and positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Cheung, C K; Nahid, F; Cheng, C C; Beling, C D; Fung, S; Ling, C C; Djurisic, A B; Pramanik, C; Saha, H; Sarkar, C K

    2007-01-01

    We have studied the dependence of porous silicon morphology and porosity on fabrication conditions. N-type (100) silicon wafers with resistivity of 2-5 Ω cm were electrochemically etched at various current densities and anodization times. Surface morphology and the thickness of the samples were examined by scanning electron microscopy (SEM). Detailed information of the porous silicon layer morphology with variation of preparation conditions was obtained by positron annihilation spectroscopy (PAS): the depth-defect profile and open pore interconnectivity on the sample surface has been studied using a slow positron beam. Coincidence Doppler broadening spectroscopy (CDBS) was used to study the chemical environment of the samples. The presence of silicon micropores with diameter varying from 1.37 to 1.51 nm was determined by positron lifetime spectroscopy (PALS). Visible luminescence from the samples was observed, which is considered to be a combination effect of quantum confinement and the effect of Si = O double bond formation near the SiO 2 /Si interface according to the results from photoluminescence (PL) and positron annihilation spectroscopy measurements. The work shows that the study of the positronium formed when a positron is implanted into the porous surface provides valuable information on the pore distribution and open pore interconnectivity, which suggests that positron annihilation spectroscopy is a useful tool in the porous silicon micropores' characterization

  19. Measurements of Silicon Detector Thermal Runaway

    CERN Document Server

    Heusch, C A; Moser, H G

    1999-01-01

    We measured thermal runaway properties of previously irradiated silicon detectors cooled by TPG bars. We simulated their expected behaviour to measure the energy gap in the detector material and to test the validity of various underlying assumptions.

  20. Thermal and optical properties of porous silicon

    Directory of Open Access Journals (Sweden)

    Silva A. Ferreira da

    2001-01-01

    Full Text Available Thermal diffusivity and optical absorption have been investigated for porous silicon, at room temperature, using photoacoustic spectroscopy. The experimental results obtained conform well with the existing studies recently published. The value obtained for thermal diffusivity is 0.045 ± 0.002 cm²/s.The absorption onsets show energy structures, differing from the ordinary semiconductor of bulk type.

  1. Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation

    International Nuclear Information System (INIS)

    Ghislotti, G.; Nielsen, B.; Asoka-Kumar, P.; Lynn, K.G.; Di Mauro, L.F.; Corni, F.; Tonini, R.

    1997-01-01

    Positron annihilation spectroscopy (PAS) is used to study Si-rich SiO 2 samples prepared by implantation of Si (160 keV) ions at doses in the range 3x10 16 endash 3x10 17 cm -2 and subsequent thermal annealing at high temperature (up to 1100 degree C). Samples implanted at doses higher than 5x10 16 cm -2 and annealed above 1000 degree C showed a PAS spectrum with an annihilation peak broader than the unimplanted sample. We discuss how these results are related to the process of silicon precipitation inside SiO 2 . copyright 1997 American Institute of Physics

  2. Positron annihilation spectroscopic studies of 6H silicon carbide

    International Nuclear Information System (INIS)

    Hu, Y.F.; Lam, C.H.; Ling, C.C.; Fung, S.; Beling, C.D.; Weng, H.M.

    2001-01-01

    Positron lifetime measurements have been performed on p-type and n-type 6H-SiC with temperatures varying from 10 K to 290 K. The V C V Si divacancy is observed in both types of 6H-SiC where the V Si related defect is only found in the n-type material. Positron trapping into a defect with lifetime value close to the bulk was found to compete with positron trapping into V Si or V C V Si at temperatures lower than 80 K. The positron diffusion length of the 1400 C annealed n-type 6H-SiC has also been measured at different temperatures with the use of a positron beam. Positron diffusion was found to be limited by acoustic phonon scattering at T=150-300 K. However, at T=50-150 K, D + follows T 2.12±0.02 and the details of the physical process is not yet known. (orig.)

  3. Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

    International Nuclear Information System (INIS)

    Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

    2006-01-01

    Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

  4. Attenuation of Thermal Neutrons by Crystalline Silicon

    International Nuclear Information System (INIS)

    Adib, M.; Habib, N.; Ashry, A.; Fathalla, M.

    2002-01-01

    A simple formula is given which allows to calculate the contribution of the total neutron cross - section including the Bragg scattering from different (hkt) planes to the neutron * transmission through a solid crystalline silicon. The formula takes into account the silicon form of poly or mono crystals and its parameters. A computer program DSIC was developed to provide the required calculations. The calculated values of the total neutron cross-section of perfect silicon crystal at room and liquid nitrogen temperatures were compared with the experimental ones. The obtained agreement shows that the simple formula fits the experimental data with sufficient accuracy .A good agreement was also obtained between the calculated and measured values of polycrystalline silicon in the energy range from 5 eV to 500μ eV. The feasibility study on using a poly-crystalline silicon as a cold neutron filter and mono-crystalline as a thermal neutron one is given. The optimum crystal thickness, mosaic spread, temperature and cutting plane for efficiently transmitting the thermal reactor neutrons, while rejecting both fast neutrons and gamma rays accompanying the thermal ones for the mono crystalline silicon are also given

  5. Hydrogen-induced structural changes in polycrystalline silicon as revealed by positron lifetime spectroscopy

    International Nuclear Information System (INIS)

    Arole, V.M.; Takwale, M.G.; Bhide, V.G.

    1989-01-01

    Hydrogen passivation of polycrystalline silicon wafer is carried out in order to reduce the deleterious effects of grain boundaries. A systematic variation is made in the process parameters implemented during hydrogen passivation and the results of room temperature resistivity measurements are reported. As an efficient tool to study the structure change, positron lifetime spectroscopic measurements are performed on original and hydrogenated polycrystalline silicon wafers and a systematic correlation is sought between the changes that take place in the electrical and structural properties of polycrystalline silicon wafer, brought about by hydrogen passivation. (author)

  6. Rapid thermal annealing of phosphorus implanted silicon

    International Nuclear Information System (INIS)

    Lee, Y.H.; Pogany, A.; Harrison, H.B.; Williams, J.S.

    1985-01-01

    Rapid thermal annealing (RTA) of phosphorus-implanted silicon has been investigated by four point probe, Van der Pauw methods and transmission electron microscopy. The results have been compared to furnace annealing. Experiments show that RTA, even at temperatures as low as 605 deg C, results in good electrical properties with little remnant damage and compares favourably with furnace annealing

  7. Positron annihilation studies on reactor irradiated and thermal annealed ferrocene

    International Nuclear Information System (INIS)

    Marques Netto, A.; Carvalho, R.S.; Magalhaes, W.F.; Sinisterra, R.D.

    1996-01-01

    Retention and thermal annealing following (n, γ) reaction in solid ferrocene, Fe(C 5 H 5 ) 2 , were studied by positron annihilation lifetime spectroscopy (PAL). Positronium (Ps) formation was observed in the non-irradiated compound with a probability or intensity (I 3 ) of 30%. Upon irradiation of the compound with thermal neutrons in a nuclear reactor, I 3 decreases with increasing irradiation time. Thermal treatment again increases I 3 values from 16% to 25%, revealing an important proportion of molecular reformation without variation of the ortho-positronium lifetime (τ 3 ). These results point out the major influence of the electronic structure as determining the Ps yields in the pure complex. In the irradiated and non irradiated complexes the results are satisfactorily explained on the basis of the spur model. (orig.)

  8. Reduced thermal conductivity of isotopically modulated silicon multilayer structures

    DEFF Research Database (Denmark)

    Bracht, H.; Wehmeier, N.; Eon, S.

    2012-01-01

    We report measurements of the thermal conductivity of isotopically modulated silicon that consists of alternating layers of highly enriched silicon-28 and silicon-29. A reduced thermal conductivity of the isotopically modulated silicon compared to natural silicon was measured by means of time......-resolved x-ray scattering. Comparison of the experimental results to numerical solutions of the corresponding heat diffusion equations reveals a factor of three lower thermal conductivity of the isotope structure compared to natural Si. Our results demonstrate that the thermal conductivity of silicon can...

  9. Internal positron source production with a cyclotron and vacancy study in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kawasuso, Atsuo; Masuno, Shin-ichi; Okada, Sohei [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Hasegawa, Masayuki; Suezawa, Masashi

    1997-03-01

    In order to detect thermal vacancies in Si, in situ positron annihilation measurement has been performed using an internal source method. An increase (decrease) in S-parameter (W-parameter) was observed above 1200degC. It was explained in terms of the formation of thermal vacancies. (author)

  10. Thermal endurance tests on silicone rubber specimens

    International Nuclear Information System (INIS)

    Warburton, C.

    1977-07-01

    Thermal endurance tests have been performed on a range of silicone rubber specimens at temperature above 300 0 C. It is suggested that the rubber mix A2426, the compound from which Wylfa sealing rings are manufactured, will fail at temperatures above 300 0 C within weeks. Hardness measurements show that this particular rubber performs in a similar manner to Walker's S.I.L./60. (author)

  11. Thermal Oxidation of Structured Silicon Dioxide

    DEFF Research Database (Denmark)

    Christiansen, Thomas Lehrmann; Hansen, Ole; Jensen, Jørgen Arendt

    2014-01-01

    The topography of thermally oxidized, structured silicon dioxide is investigated through simulations, atomic force microscopy, and a proposed analytical model. A 357 nm thick oxide is structured by removing regions of the oxide in a masked etch with either reactive ion etching or hydrofluoric acid....... Subsequent thermal oxidation is performed in both dry and wet ambients in the temperature range 950◦C to 1100◦C growing a 205 ± 12 nm thick oxide in the etched mask windows. Lifting of the original oxide near the edge of the mask in the range 6 nm to 37 nm is seen with increased lifting for increasing...

  12. Ultrahigh thermal conductivity of isotopically enriched silicon

    Science.gov (United States)

    Inyushkin, Alexander V.; Taldenkov, Alexander N.; Ager, Joel W.; Haller, Eugene E.; Riemann, Helge; Abrosimov, Nikolay V.; Pohl, Hans-Joachim; Becker, Peter

    2018-03-01

    Most of the stable elements have two and more stable isotopes. The physical properties of materials composed of such elements depend on the isotopic abundance to some extent. A remarkably strong isotope effect is observed in the phonon thermal conductivity, the principal mechanism of heat conduction in nonmetallic crystals. An isotopic disorder due to random distribution of the isotopes in the crystal lattice sites results in a rather strong phonon scattering and, consequently, in a reduction of thermal conductivity. In this paper, we present new results of accurate and precise measurements of thermal conductivity κ(T) for silicon single crystals having three different isotopic compositions at temperatures T from 2.4 to 420 K. The highly enriched crystal containing 99.995% of 28Si, which is one of the most perfect crystals ever synthesized, demonstrates a thermal conductivity of about 450 ± 10 W cm-1 K-1 at 24 K, the highest measured value among bulk dielectrics, which is ten times greater than the one for its counterpart natSi with the natural isotopic constitution. For highly enriched crystal 28Si and crystal natSi, the measurements were performed for two orientations [001] and [011], a magnitude of the phonon focusing effect on thermal conductivity was determined accurately at low temperatures. The anisotropy of thermal conductivity disappears above 31 K. The influence of the boundary scattering on thermal conductivity persists sizable up to much higher temperatures (˜80 K). The κ(T) measured in this work gives the most accurate approximation of the intrinsic thermal conductivity of single crystal silicon which is determined solely by the anharmonic phonon processes and diffusive boundary scattering over a wide temperature range.

  13. Positron mobility in thermally grown SiO2 measured by Doppler broadening technique

    International Nuclear Information System (INIS)

    Kong, Y.; Leung, T.C.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K.G.

    1991-01-01

    The positron mobility in thermally grown SiO 2 is deduced from Doppler broadening lineshape data on a metal-oxide-semiconductor sample for positrons implanted into the oxide layer. The fitted mobility is ∼13(10)x10 -3 cm 2 /s V. This value is between that of the electron and hole mobilities in the same system and is two orders of magnitude smaller than the previous estimate from positron measurements

  14. Scattering of thermal photons by a 46 GeV positron beam at LEP

    International Nuclear Information System (INIS)

    Bini, C.; De Zorzi, G.; Diambrini-Palazzi, G.; Di Cosimo, G.; Di Domenico, A.; Gauzzi, P.; Zanello, D.

    1991-01-01

    The scattering of thermal photons present in the vacuum pipe of LEP against the high energy positron beam has been detected. The spectrum of the back-scattered photons is presented for a positron beam energy of 46.1 GeV. Measurements have been performed in the interaction region 1 with the LEP-5 experiment calorimeter. (orig.)

  15. Evaluation of Timepix silicon detector for the detection of 18F positrons

    Science.gov (United States)

    Wang, Q.; Tous, J.; Liu, Z.; Ziegler, S.; Shi, K.

    2014-05-01

    Timepix is an evolving energy and position sensitive pixel detector. It consists of a silicon detector (sensitive layer 300 μm thick) bump-bonded to the Timepix readout chip developed by the Medipix2 collaboration. This study aims to test the feasibility of using the acquired energy and position signals from Timepix for positron imaging. The signals of the commonly used fluorine-18 PET (positron emission tomography) tracer [18F]FDG were measured using Timepix operated both in single particle counting (Medipix) and in time over threshold (TOT) modes. The spatial resolution (SR) was measured using the absorber edge method (AEM) and was calculated from the over-sampled line spread function. The track of a positron in the Timepix detector was characterized as a cluster and the energy weighted centroid of each cluster was considered as readout for the position of the positron incidence. The measurement results were compared with theoretical predictions using Monte-Carlo simulations. In addition, imaging of a tissue slice of a mouse heart was analysed with reference to standard phosphor plate imaging. Our results show that the SR was improved from 177.1±4.1 μm (centroid without energy weighting) to 155.5±3.1 μm μm (centroid with energy weighting). About 12% enhancement of SR was achieved with energy information in TOT mode. The sensitivity of Timepix was 0.35 cps/Bq based on the measurements. The measuring background and the ratio between detected positrons and gamma rays were also evaluated and were found to be consistent with theoretical predictions. A small enhancement of image quality was also achieved by applying energy information to the data of the measured tissue sample. Our results show that the inclusion of energy information could slightly enhance the positron measurement compared to without energy information and the Timepix provides a high SR and sensitivity for positron detection. Thus, Timepix is a potentially effective tool for 2D positron imaging.

  16. Electrical properties of pressure quenched silicon by thermal spraying

    International Nuclear Information System (INIS)

    Tan, S.Y.; Gambino, R.J.; Sampath, S.; Herman, H.

    2007-01-01

    High velocity thermal spray deposition of polycrystalline silicon film onto single crystal substrates, yields metastable high pressure forms of silicon in nanocrystalline form within the deposit. The phases observed in the deposit include hexagonal diamond-Si, R-8, BC-8 and Si-IX. The peculiar attribute of this transformation is that it occurs only on orientation silicon substrate. The silicon deposits containing the high pressure phases display a substantially higher electrical conductivity. The resistivity profile of the silicon deposit containing shock induced metastable silicon phases identified by X-ray diffraction patterns. The density of the pressure induced polymorphic silicon is higher at deposit/substrate interface. A modified two-layer model is presented to explain the resistivity of the deposit impacted by the pressure induced polymorphic silicon generated by the thermal spraying process. The pressure quenched silicon deposits on the p - silicon substrate, with or without metastable phases, display the barrier potential of about 0.72 eV. The measured hall mobility value of pressure quenched silicon deposits is in the range of polycrystalline silicon. The significance of this work lies in the fact that the versatility of thermal spray may enable applications of these high pressure forms of silicon

  17. Low-temperature positron-lifetime studies of proton-irradiated silicon

    DEFF Research Database (Denmark)

    Mäkinen, S.; Rajainmäki, H.; Linderoth, Søren

    1990-01-01

    The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen...... in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific...

  18. A possible role for silicon microstrip detectors in nuclear medicine Compton imaging of positron emitters

    CERN Document Server

    Scannavini, M G; Royle, G J; Cullum, I; Raymond, M; Hall, G; Iles, G

    2002-01-01

    Collimation of gamma-rays based on Compton scatter could provide in principle high resolution and high sensitivity, thus becoming an advantageous method for the imaging of radioisotopes of clinical interest. A small laboratory prototype of a Compton camera is being constructed in order to initiate studies aimed at assessing the feasibility of Compton imaging of positron emitters. The design of the camera is based on the use of a silicon collimator consisting of a stack of double-sided, AC-coupled microstrip detectors (area 6x6 cm sup 2 , 500 mu m thickness, 128 channels/side). Two APV6 chips are employed for signal readout on opposite planes of each detector. This work presents the first results on the noise performance of the silicon strip detectors. Measurements of the electrical characteristics of the detector are also reported. On the basis of the measured noise, an angular resolution of approximately 5 deg. is predicted for the Compton collimator.

  19. Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

    Science.gov (United States)

    Arutyunov, N.; Emtsev, V.; Krause-Rehberg, R.; Elsayed, M.; Kessler, C.; Kozlovski, V.; Oganesyan, G.

    2015-06-01

    Defects in phosphorus-doped silicon samples of floating-zone material, n-FZ-Si(P), produced under irradiation with 15 MeV protons at room temperature are studied by positron annihilation lifetime spectroscopy over the temperature range of ∼ 30 K - 300 K and by low- temperature Hall effect measurements. After annealing of E-centersand divacancies, we detected for the first time high concentrations of positron traps which had not been observed earlier. These defects are isochronally annealed over the temperature interval of ∼ 320 °C - 700 °C they manifest themselves as electrically neutral deep donor centersin the material of n-type. A long-lived component of the positron lifetime, τ2(I2 enthalpy and entropy of annealing of these centersare Ea ∼ 1.05(0.21) eV and ΔSm ≈ 3.1(0.6)kB, respectively. It is argued that the microstructure of the defect consists of two vacancies, VV, and one atom of phosphorus, P. The split configuration of the VPV complex is shortly discussed.

  20. 18F-FDG positron autoradiography with a particle counting silicon pixel detector.

    Science.gov (United States)

    Russo, P; Lauria, A; Mettivier, G; Montesi, M C; Marotta, M; Aloj, L; Lastoria, S

    2008-11-07

    We report on tests of a room-temperature particle counting silicon pixel detector of the Medipix2 series as the detector unit of a positron autoradiography (AR) system, for samples labelled with (18)F-FDG radiopharmaceutical used in PET studies. The silicon detector (1.98 cm(2) sensitive area, 300 microm thick) has high intrinsic resolution (55 microm pitch) and works by counting all hits in a pixel above a certain energy threshold. The present work extends the detector characterization with (18)F-FDG of a previous paper. We analysed the system's linearity, dynamic range, sensitivity, background count rate, noise, and its imaging performance on biological samples. Tests have been performed in the laboratory with (18)F-FDG drops (37-37 000 Bq initial activity) and ex vivo in a rat injected with 88.8 MBq of (18)F-FDG. Particles interacting in the detector volume produced a hit in a cluster of pixels whose mean size was 4.3 pixels/event at 11 keV threshold and 2.2 pixels/event at 37 keV threshold. Results show a sensitivity for beta(+) of 0.377 cps Bq(-1), a dynamic range of at least five orders of magnitude and a lower detection limit of 0.0015 Bq mm(-2). Real-time (18)F-FDG positron AR images have been obtained in 500-1000 s exposure time of thin (10-20 microm) slices of a rat brain and compared with 20 h film autoradiography of adjacent slices. The analysis of the image contrast and signal-to-noise ratio in a rat brain slice indicated that Poisson noise-limited imaging can be approached in short (e.g. 100 s) exposures, with approximately 100 Bq slice activity, and that the silicon pixel detector produced a higher image quality than film-based AR.

  1. Thermal conductivity of silicon nanocrystals and polystyrene nanocomposite thin films

    International Nuclear Information System (INIS)

    Juangsa, Firman Bagja; Muroya, Yoshiki; Nozaki, Tomohiro; Ryu, Meguya; Morikawa, Junko

    2016-01-01

    Silicon nanocrystals (SiNCs) are well known for their size-dependent optical and electronic properties; they also have the potential for low yet controllable thermal properties. As a silicon-based low-thermal conductivity material is required in microdevice applications, SiNCs can be utilized for thermal insulation. In this paper, SiNCs and polymer nanocomposites were produced, and their thermal conductivity, including the density and specific heat, was measured. Measurement results were compared with thermal conductivity models for composite materials, and the comparison shows a decreasing value of the thermal conductivity, indicating the effect of the size and presence of the nanostructure on the thermal conductivity. Moreover, employing silicon inks at room temperature during the fabrication process enables a low cost of fabrication and preserves the unique properties of SiNCs. (paper)

  2. A positron annihilation lifetime spectroscopy study of porous silicon using a continuous lifetime fitting algorithm

    International Nuclear Information System (INIS)

    Derlet, P.M.; Choy, T.C.

    1996-01-01

    In the present work we report on a positron annihilation lifetime spectroscopy (PALS) investigation of porous silicon using a continuous lifetime fitting algorithm. Our motivation lies in the underlying disadvantage in discrete lifetime fitting algorithms where the number of components must initially be assumed since in general a realistic spectrum does not uniquely determine this number. This becomes particularly apparent when looking at highly disordered systems where the notion of a discrete spectrum may be invalid and indeed crucial to an understanding of the optical absorption and photo-luminescence properties. Using the PALS data collected from different porous silicon samples in conjunction with other methods of characterisation, we have extended the findings of previous work. In particular we resolve three rather than two ortho-positronium components, suggesting that there may be an additional intermediary scale of porosity in which ortho-positronium annihilates. We also establish the existence of a very weak ortho-positronium component in the pre-anodised wafers at a time scale approximately equal to the longest time ortho-positronium component seen in porous silicon, suggesting that irregularities of a particular magnitude exist before anodisation and that these may, in part, be the catalyst for the initial pore formation process

  3. Positron annihilation in Si and Si-related materials in thermal equilibrium at high temperature

    International Nuclear Information System (INIS)

    Uedono, A.; Muramatsu, M.; Ubukata, T.; Tanino, H.; Shiraishi, T.; Tanigawa, S.; Takasu, S.

    2001-01-01

    Annihilation characteristics of positrons in the carbon/Si structure in thermal equilibrium at high temperature were studied using a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured as a function of incident positron energy in the temperature range between 298 K and 1473 K. Above 1173 K, the value of S corresponding to the annihilation of positrons near the carbon/Si interface started to increase, which was attributed to the carbonization of Si and the introduction of open-space defects due to the diffusion of Si atoms toward the carbon layer. The behavior of Ps in a thermally grown SiO 2 film was also studied at 298-1523 K. (orig.)

  4. Positron annihilation in thermally quenched YBa2Cu3O7-x

    International Nuclear Information System (INIS)

    Hong Zhang; Xiao-Gang Wang; Yao-Xian Fu

    1988-01-01

    Trapping effects related directly with the oxygen vacancy in YBa 2 Cu 3 O 7-x are studied by the aid of positron lifetime and positron annihilation Doppler energy spectra of a thermally quenched sample. Results indicate that the trapping center is linearly related with the oxygen vacancy. Vacancies are ordered in the orthorhombic phase and disordered in the tetragonal phase on the Cu-O plane

  5. Thermal Properties of the Silicon Microstrip Endcap Detector

    CERN Document Server

    Feld, Lutz; Hammarström, R

    1998-01-01

    Irradiated silicon detectors must be cooled in order to guarantee stable short and long term operation. Using the SiF1 milestone prototype we have performed a detailed analysis of the thermal properties of the silicon microstrip endcap detector. The strongest constraint on the cooling system is shown to be set by the need to avoid thermal runaway of the silicon detectors. We show that, taking into account the radiation damage to the silicon after 10 years of LHC operation and including some safety margin, the detector will need a cooling fluid temperature of around -20 C. The highest temperature on the silicon will then be in the range -15 C to -10 C. This sets an upper limit on the ambient temperature in the tracker volume.

  6. Silicon photomultipliers for positron emission tomography detectors with depth of interaction encoding capability

    International Nuclear Information System (INIS)

    Taghibakhsh, Farhad; Reznik, Alla; Rowlands, John A.

    2011-01-01

    Silicon photomultipliers (SiPMs) are receiving increasing attention in the field of positron emission tomography (PET) detectors. Compared to photomultiplier tubes, they offer novel detector configurations for the extraction of depth of interaction (DOI) information, or enable emerging medical imaging modalities such as simultaneous PET-magnetic resonant imaging (MRI). In this article, we used 2x2x20 mm 3 LYSO scintillator crystals coupled to SiPMs on both ends (dual-ended readout configuration) to evaluate the detector performance for DOI-PET applications. We investigated the effect of scintillator crystal surface finishing on sensitivity and resolution of DOI, as well as on energy and timing resolution. Measurements indicate DOI sensitivity and resolution of 7.1% mm -1 and 2.1±0.6 mm for saw-cut, and 1.3% mm -1 and 9.0±1.5 mm, for polished scintillator crystals, respectively. Energy resolution varies from 19% when DOI is in the center, to 15% with DOI at either end of the saw-cut crystal, while it remains constant at ∼14% for polished scintillators. Based on our results we conclude that 2x2x20 mm 3 saw-cut (without any special side wall polishing) LYSO crystals coupled to 2x2 mm 2 silicon photomultipliers are optimal for isotropic 2 mm resolution DOI-PET applications.

  7. Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

    2010-01-01

    We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

  8. Silicon technologies ion implantation and thermal treatment

    CERN Document Server

    Baudrant, Annie

    2013-01-01

    The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.

  9. Molecular dynamics study of the thermal expansion coefficient of silicon

    Energy Technology Data Exchange (ETDEWEB)

    Nejat Pishkenari, Hossein, E-mail: nejat@sharif.edu; Mohagheghian, Erfan; Rasouli, Ali

    2016-12-16

    Due to the growing applications of silicon in nano-scale systems, a molecular dynamics approach is employed to investigate thermal properties of silicon. Since simulation results rely upon interatomic potentials, thermal expansion coefficient (TEC) and lattice constant of bulk silicon have been obtained using different potentials (SW, Tersoff, MEAM, and EDIP) and results indicate that SW has a better agreement with the experimental observations. To investigate effect of size on TEC of silicon nanowires, further simulations are performed using SW potential. To this end, silicon nanowires of different sizes are examined and their TEC is calculated by averaging in different directions ([100], [110], [111], and [112]) and various temperatures. Results show that as the size increases, due to the decrease of the surface effects, TEC approaches its bulk value. - Highlights: • MD simulations of TEC and lattice constant of bulk silicon. • Effects of four potentials on the results. • Comparison to experimental data. • Investigating size effect on TEC of silicon nanowires.

  10. On the use of silicon as thermal neutron filter

    International Nuclear Information System (INIS)

    Adib, M.; Habib, N.; Ashry, A.; Fathalla, M.

    2003-01-01

    A simple formula is given which allows to calculate the contribution of the total neutron cross-section including the Bragg scattering from different (hkl) planes to the neutron transmission through a solid crystalline silicon. The formula takes into account the silicon form of poly or mono crystals and its parameters. A computer program DSIC was developed to provide the required calculations. The calculated values of the total neutron cross-section of perfect silicon crystal at room and liquid nitrogen temperatures were compared with the experimental ones. The obtained agreement shows that the simple formula fits the experimental data with sufficient accuracy. A good agreement was also obtained between the calculated and measured values of polycrystalline silicon in the energy range from 5 eV to 500 μeV. The feasibility study on using a poly-crystalline silicon as a cold neutron filter and mono-crystalline as a thermal neutron one is given. The optimum crystal thickness, mosaic spread, temperature and cutting plane for efficiently transmitting the thermal reactor neutrons, while rejecting both fast neutrons and gamma rays accompanying the thermal ones for the mono crystalline silicon are also given

  11. On the use of silicon as thermal neutron filter

    Energy Technology Data Exchange (ETDEWEB)

    Adib, M.; Habib, N.; Ashry, A.; Fathalla, M. E-mail: mohamedfathalla@hotmail.com

    2003-12-01

    A simple formula is given which allows to calculate the contribution of the total neutron cross-section including the Bragg scattering from different (hkl) planes to the neutron transmission through a solid crystalline silicon. The formula takes into account the silicon form of poly or mono crystals and its parameters. A computer program DSIC was developed to provide the required calculations. The calculated values of the total neutron cross-section of perfect silicon crystal at room and liquid nitrogen temperatures were compared with the experimental ones. The obtained agreement shows that the simple formula fits the experimental data with sufficient accuracy. A good agreement was also obtained between the calculated and measured values of polycrystalline silicon in the energy range from 5 eV to 500 {mu}eV. The feasibility study on using a poly-crystalline silicon as a cold neutron filter and mono-crystalline as a thermal neutron one is given. The optimum crystal thickness, mosaic spread, temperature and cutting plane for efficiently transmitting the thermal reactor neutrons, while rejecting both fast neutrons and gamma rays accompanying the thermal ones for the mono crystalline silicon are also given.

  12. Positron annihilation and thermally stimulated current of electron beam irradiated polyetheretherketone

    Energy Technology Data Exchange (ETDEWEB)

    Fujita, Shigetaka; Shinyama, Katsuyoshi; Baba, Makoto [Hachinohe Inst. of Tech., Hachinohe, Aomori (Japan); Suzuki, Takenori

    1997-03-01

    Positron lifetime measurements were applied to electron beam irradiated poly(ether-ether-ketone). The lifetime, {tau}{sub 3}, of the ortho-positronium of unirradiated and 5 MGy irradiated specimen became rapidly longer above about 150degC. {tau}{sub 3} of 50 MGy and 100 MGy irradiated specimen was shorter than that of unirradiated one. Thermally stimulated current (TSC) decreased with increasing the dose before voltage application. In the case of voltage application, a TSC peak appeared and the peak value decreased with increased the dose. The correlation between the results of positron annihilation and TSC was investigated. (author)

  13. On thermalization of electron-positron-photon plasma

    Energy Technology Data Exchange (ETDEWEB)

    Siutsou, I. A., E-mail: siutsou@icranet.org [CAPES–ICRANet program, ICRANet–Rio, CBPF 22290-180, Rua Dr. Xavier Sigaud, 150, Urca, Rio de Janeiro, RJ (Brazil); Aksenov, A. G. [Institute for Computer-Aided Design, Russian Academy of Sciences 123056, 2nd Brestskaya st., 19/18, Moscow (Russian Federation); Vereshchagin, G. V. [ICRANet 65122, p.le della Republica, 10, Pescara (Italy)

    2015-12-17

    Recently a progress has been made in understanding thermalization mechanism of relativistic plasma starting from a non-equilibrium state. Relativistic Boltzmann equations were solved numerically for homogeneous isotropic plasma with collision integrals for two- and three-particle interactions calculated from the first principles by means of QED matrix elements. All particles were assumed to fulfill Boltzmann statistics. In this work we follow plasma thermalization by accounting for Bose enhancement and Pauli blocking in particle interactions. Our results show that particle in equilibrium reach Bose-Einstein distribution for photons, and Fermi-Dirac one for electrons, respectively.

  14. On thermalization of electron-positron-photon plasma

    Science.gov (United States)

    Siutsou, I. A.; Aksenov, A. G.; Vereshchagin, G. V.

    2015-12-01

    Recently a progress has been made in understanding thermalization mechanism of relativistic plasma starting from a non-equilibrium state. Relativistic Boltzmann equations were solved numerically for homogeneous isotropic plasma with collision integrals for two- and three-particle interactions calculated from the first principles by means of QED matrix elements. All particles were assumed to fulfill Boltzmann statistics. In this work we follow plasma thermalization by accounting for Bose enhancement and Pauli blocking in particle interactions. Our results show that particle in equilibrium reach Bose-Einstein distribution for photons, and Fermi-Dirac one for electrons, respectively.

  15. High-field EPR spectroscopy of thermal donors in silicon

    DEFF Research Database (Denmark)

    Dirksen, R.; Rasmussen, F.B.; Gregorkiewicz, T.

    1997-01-01

    Thermal donors generated in p-type boron-doped Czochralski-grown silicon by a 450 degrees C heat treatment have been studied by high-field magnetic resonance spectroscopy. In the experiments conducted at a microwave frequency of 140 GHz and in a magnetic field of approximately 5 T four individual...

  16. Thermal oxidation of silicon with two oxidizing species

    International Nuclear Information System (INIS)

    Vild-Maior, A.A.; Filimon, S.

    1979-01-01

    A theoretical model for the thermal oxidation of silicon in wet oxygen is presented. It is shown that the presence of oxygen in the oxidation furnace has an important effect when the water temperature is not too high (less than about 65 deg C). The model is in good agreement with the experimental data. (author)

  17. Hardness and thermal stability of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Kragh, Flemming; Frost, D. J.

    2001-01-01

    The hardness and thermal stability of cubic spinel silicon nitride (c-Si3N4), synthesized under high-pressure and high-temperature conditions, have been studied by microindentation measurements, and x-ray powder diffraction and scanning electron microscopy, respectively The phase at ambient...

  18. Thermal shock investigation of silicon nitride

    International Nuclear Information System (INIS)

    Ziegler, G.; Leucht, R.

    1977-01-01

    In this work, the thermal shock properties of commercial reaction-bonded Si 3 N 4 quality material (RBSN), of commercial hot-pressed Si 3 N 4 (HPSN) and of different laboratory grades of hot-pressed Si 3 N 4 were examined. The thermal shock properties of RBSN quality material differ according to the structure considerably: The critical temperature difference for sample crossections of 5 x 5 or 6 x 6 mm after quenching in oil lies between 730 0 C and over 1400 0 C. The best thermal shock properties are shown by high density RBSN quality material having very fine pores and high initial strength. The results indicate that for RBSN large pores and density inhomogenities are responsible for bad thermal shock properties. Resistance to fast temperature change is higher for hot-pressed Si 3 N 4 than for RBSN quality material. In HPSN, the thermal shock results show dependence on structure. High MgO content and the associated coarse rod-shaped configuration of the β phase and structural inhomogenities affect the thermal shock properties in an adverse way. (orig.) [de

  19. A time-pulsed positronium beam and a study of oxides on silicon using positrons

    International Nuclear Information System (INIS)

    Khatri, R.K.

    1993-01-01

    The studies on rare gas solid moderators were carried out with a 350 μCi 22 Na radioactive source. The corrected efficiency for neon moderator in conical geometrical configuration was as high as (1.4 ± 0.2)%. The conical configuration moderator performed better by a factor of (2.2 ± 0.2) than the cylindrical configuration. A time pulsed positron beam was built to carry out investigations on the positronium formation processes and positronium beam. This beam has the capability to store low energy e + in a magnetic bottle, with a magnetic bottle at one end and an electrostatic mirror at the other. These stored e + are then bunched to form a pulse with a buncher. The bunched beam had a FWHM of 17 nsec and contained 1 to 2 e + /pulse. A thin carbon foil of 50 angstrom thickness was used for positronium formation by process of charge exchange. Positronium Annihilation Spectroscopy (PAS) was utilized to carry out studies on the activation energy of hydrogen at the interface of oxide and silicon substrate and the effect of irradiation on the oxides in SiO 2 /Si(100) sample. The activation energy of hydrogen at the interface of SiO 2 /Si(100) samples with n- and p-type substrate was measured to be 2.60(6) eV and 2.47(6) eV respectively. The investigations of the samples irradiated with x-ray and γ-ray led to the first time identification of creation of E' centers with PAS

  20. Positron annihilation studies of the Al-Ca-Zn superplastic alloy: thermal and thermomechanical contribution

    International Nuclear Information System (INIS)

    Ayciriex, M.D.; Romero, R.; Somoza, A.; Silvetti, S.P.; Villagra, O.

    1993-01-01

    Positron annihilation spectroscopy (PAS) is an established method for the study of electronic structure and defect properties in metals and alloys. The application of this technique to the study of positron trapping in grain boundaries and related phenomena, however, is relatively scarce. The physical basis for the application of PAS to the study of grain boundaries is the fact that grain boundaries are regions of low atomic density which result in attractive sites to the trap positions. The superplastic alloys are particularly suitable materials to be studied with PAS; they have a fine-grained structure, and therefore a high density of grain boundaries. Moreover, in the annealed condition, they have a low density of other types of defects capable of trapping positrons, such as dislocations. This type of polycrystalline material can undergo extremely high deformations (up to hundreds and thousands percent) in a certain temperature-strain rate range without macroscopic failure. This paper is part of a whole study of the thermal and thermomechanical effects on the positron lifetime parameters and their relation with microstructural changes and the phenomenon of structural superplasticity in a Al-Ca-Zn alloy

  1. Desorption of surface positrons: A source of free positronium at thermal velocities

    International Nuclear Information System (INIS)

    Mills, A.P. Jr.; Pfeiffer, L.

    1979-01-01

    A direct measurement is reported of the velocity of positronium (Ps) ejected into a vacuum when 0- to 100-eV positrons (e + ) strike a negatively biased Cu(111) surface. At 30 0 C, about half the e + form Ps with normal energy component E-bar=3.4(3) eV. At 790 0 C, most of the remaining e + form Ps but with E-bar=0.14(1) eV, and a non-Maxwellian thermal distribution. We infer that surface-bound e + are thermally desorbed to form the extra Ps. These low Ps velocities suggest exciting possibilities for experiments on free Ps

  2. SensL B-Series and C-Series silicon photomultipliers for time-of-flight positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    O' Neill, K., E-mail: koneill@sensl.com; Jackson, C., E-mail: cjackson@sensl.com

    2015-07-01

    Silicon photomultipliers from SensL are designed for high performance, uniformity and low cost. They demonstrate peak photon detection efficiency of 41% at 420 nm, which is matched to the output spectrum of cerium doped lutetium orthosilicate. Coincidence resolving time of less than 220 ps is demonstrated. New process improvements have lead to the development of C-Series SiPM which reduces the dark noise by over an order of magnitude. In this paper we will show characterization test results which include photon detection efficiency, dark count rate, crosstalk probability, afterpulse probability and coincidence resolving time comparing B-Series to the newest pre-production C-Series. Additionally we will discuss the effect of silicon photomultiplier microcell size on coincidence resolving time allowing the optimal microcell size choice to be made for time of flight positron emission tomography systems.

  3. The Positronium Radiative Combination Spectrum: Calculation in the Limit of Thermal Positrons and Low Densities

    Science.gov (United States)

    Wallyn, P.; Mahoney, W. A.; Durouchoux, Ph.; Chapuis, C.

    1996-01-01

    We calculate the intensities of the positronium de-excitation lines for two processes: (1) the radiative combination of free thermal electrons and positrons for transitions with principal quantum number n less than 20, and (2) charge exchange between free positrons and hydrogen and helium atoms, restricting our evaluation to the Lyman-alpha line. We consider a low-density medium modeled by the case A assumption of Baker & Menzel and use the "nL method" of Pengelly to calculate the absolute intensities. We also evaluate the positronium fine and hyperfine intensities and show that these transitions are in all cases much weaker than positronium de-excitation lines in the same wavelength range. We also extrapolate our positronium de-excitation intensities to the submillimeter, millimeter, and centimeter wavelengths. Our results favor the search of infrared transitions of positronium lines for point sources when the visual extinction A, is greater than approx. 5.

  4. Study of the silicon photomultipliers and their applications in positron emission tomography

    International Nuclear Information System (INIS)

    Xu, Chen

    2014-05-01

    This thesis deals with silicon photomultipliers (SiPM) used in scintillation detectors and their applications in positron emission tomography (PET). The study of the SiPM is mainly focused on the application to the proposed EndoTOFPET-US detector, which is a multi-modality PET detector facilitating the development of new biomarkers for pancreas and prostate cancers. A Monte Carlo simulation tool is developed for the optimization of the detector's single channel design. In order to obtain a 200 ps system coincidence time resolution and maximize the detector sensitivity, the requirements for the crystal geometry, light yield and SiPM photon detection efficiency are specified based on the simulation study. In addition, the nonlinear response of the SiPM can be corrected by the simulation tool and the energy resolution of the detector is extracted. A series of measurements are established to characterize SiPMs in a fast and reliable way with high precision. The static characterization measures the value of different components in the derived electrical model of the SiPM, whereas the dynamic characterization extracts parameters that is crucial for the operation of the SiPM. Several SiPM samples are tested and their characteristics are compared. The developed setup and the precision of the measurement fulfill the requirements of the quality assurance test for the commissioning of the EndoTOFPET-US detector. The test foresees large quantities of SiPMs to be characterized. In addition, the developed measuring procedure has contributed to the study of X-ray induced surface damage of a SiPM from Hamamatsu. Characteristics of the device are measured before and after irradiating the SiPM with different X-ray doses, the results are compared and discussed. A comparative study of a digital and an analog SiPM in gamma spectroscopy with the inorganic scintillator is presented. The characteristics of a prototype digital SiPM that is developed for the EndoTOFPETUS detector is

  5. Surface effects on the thermal conductivity of silicon nanowires

    Science.gov (United States)

    Li, Hai-Peng; Zhang, Rui-Qin

    2018-03-01

    Thermal transport in silicon nanowires (SiNWs) has recently attracted considerable attention due to their potential applications in energy harvesting and generation and thermal management. The adjustment of the thermal conductivity of SiNWs through surface effects is a topic worthy of focus. In this paper, we briefly review the recent progress made in this field through theoretical calculations and experiments. We come to the conclusion that surface engineering methods are feasible and effective methods for adjusting nanoscale thermal transport and may foster further advancements in this field. Project supported by the National Natural Science Foundation ofChina (Grant No. 11504418), China Scholarship Council (Grant No. 201706425053), Basic Research Program in Shenzhen, China (Grant No. JCYJ20160229165210666), and the Fundamental Research Funds for the Central Universities of China (Grant No. 2015XKMS075).

  6. Thermal neutron scattering kernels for sapphire and silicon single crystals

    International Nuclear Information System (INIS)

    Cantargi, F.; Granada, J.R.; Mayer, R.E.

    2015-01-01

    Highlights: • Thermal cross section libraries for sapphire and silicon single crystals were generated. • Debye model was used to represent the vibrational frequency spectra to feed the NJOY code. • Sapphire total cross section was measured at Centro Atómico Bariloche. • Cross section libraries were validated with experimental data available. - Abstract: Sapphire and silicon are materials usually employed as filters in facilities with thermal neutron beams. Due to the lack of the corresponding thermal cross section libraries for those materials, necessary in calculations performed in order to optimize beams for specific applications, here we present the generation of new thermal neutron scattering kernels for those materials. The Debye model was used in both cases to represent the vibrational frequency spectra required to feed the NJOY nuclear data processing system in order to produce the corresponding libraries in ENDF and ACE format. These libraries were validated with available experimental data, some from the literature and others obtained at the pulsed neutron source at Centro Atómico Bariloche

  7. 3D numerical thermal stress analysis of the high power target for the SLC Positron Source

    International Nuclear Information System (INIS)

    Reuter, E.M.; Hodgson, J.A.

    1991-05-01

    The volumetrically nonuniform power deposition of the incident 33 GeV electron beam in the SLC Positron Source Target is hypothesized to be the most likely cause target failure. The resultant pulsed temperature distributions are known to generate complicated stress fields with no known closed-form analytical solution. 3D finite element analyses of these temperature distributions and associated thermal stress fields in the new High Power Target are described here. Operational guidelines based on the results of these analyses combined with assumptions made about the fatigue characteristics of the exotic target material are proposed. 6 refs., 4 figs

  8. Thermally actuated resonant silicon crystal nanobalances

    Science.gov (United States)

    Hajjam, Arash

    As the potential emerging technology for next generation integrated resonant sensors and frequency references as well as electronic filters, micro-electro-mechanical resonators have attracted a lot of attention over the past decade. As a result, a wide variety of high frequency micro/nanoscale electromechanical resonators have recently been presented. MEMS resonators, as low-cost highly integrated and ultra-sensitive mass sensors, can potentially provide new opportunities and unprecedented capabilities in the area of mass sensing. Such devices can provide orders of magnitude higher mass sensitivity and resolution compared to Film Bulk Acoustic resonators (FBAR) or the conventional quartz and Surface Acoustic Wave (SAW) resonators due to their much smaller sizes and can be batch-fabricated and utilized in highly integrated large arrays at a very low cost. In this research, comprehensive experimental studies on the performance and durability of thermally actuated micromechanical resonant sensors with frequencies up to tens of MHz have been performed. The suitability and robustness of the devices have been demonstrated for mass sensing applications related to air-borne particles and organic gases. In addition, due to the internal thermo-electro-mechanical interactions, the active resonators can turn some of the consumed electronic power back into the mechanical structure and compensate for the mechanical losses. Therefore, such resonators can provide self-sustained-oscillation without the need for any electronic circuitry. This unique property has been deployed to demonstrate a prototype self-sustained sensor for air-borne particle monitoring. I have managed to overcome one of the obstacles for MEMS resonators, which is their relatively poor temperature stability. This is a major drawback when compared with the conventional quartz crystals. A significant decrease of the large negative TCF for the resonators has been attained by doping the devices with a high

  9. Thermally promoted addition of undecylenic acid on thermally hydrocarbonized porous silicon optical reflectors

    OpenAIRE

    Jalkanen, Tero; Mäkilä, Ermei; Sakka, Tetsuo; Salonen, Jarno; Ogata, Yukio H

    2012-01-01

    Thermally promoted addition of undecylenic acid is studied as a method for modifying porous silicon optical reflectors that have been pre-treated with thermal hydrocarbonization. Successful derivatization of undecylenic acid is demonstrated and confirmed with Fourier transform infrared and X-ray photoelectron spectroscopies. The results indicate that the hydrocarbonization pre-treatment considerably improves stability against oxidation and chemical dissolution in basic environments. The two-s...

  10. Tailoring Thermal Radiative Properties with Doped-Silicon Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhuomin [Georgia Inst. of Technology, Atlanta, GA (United States)

    2017-08-28

    Aligned doped-silicon nanowire (D-SiNW) arrays form a hyperbolic metamaterial in the mid-infrared and have unique thermal radiative properties, such as broadband omnidirectional absorption, low-loss negative refraction, etc. A combined theoretical and experimental investigation will be performed to characterize D-SiNW arrays and other metamaterials for tailoring thermal radiative properties. Near-field thermal radiation between anisotropic materials with hyperbolic dispersions will also be predicted for potential application in energy harvesting. A new kind of anisotropic metamaterial with a hyperbolic dispersion in a broad infrared region has been proposed and demonstrated based on aligned doped-silicon nanowire (D-SiNW) arrays. D-SiNW-based metamaterials have unique thermal radiative properties, such as broadband omnidirectional absorption whose width and location can be tuned by varying the filling ratio and/or doping level. Furthermore, high figure of merit (FOM) can be achieved in a wide spectral region, suggesting that D-SiNW arrays may be used as a negative refraction material with much less loss than other structured materials, such as layered semiconductor materials. We have also shown that D-SiNWs and other nanostructures can significantly enhance near-field thermal radiation. The study of near-field radiative heat transfer between closely spaced objects and the electromagnetic wave interactions with micro/nanostructured materials has become an emerging multidisciplinary field due to its importance in advanced energy systems, manufacturing, local thermal management, and high spatial resolution thermal sensing and mapping. We have performed extensive study on the energy streamlines involving anisotropic metamaterials and the applicability of the effective medium theory for near-field thermal radiation. Graphene as a 2D material has attracted great attention in nanoelectronics, plasmonics, and energy harvesting. We have shown that graphene can be used to

  11. Effects of lithium insertion on thermal conductivity of silicon nanowires

    International Nuclear Information System (INIS)

    Xu, Wen; Zhang, Gang; Li, Baowen

    2015-01-01

    Recently, silicon nanowires (SiNWs) have been applied as high-performance Li battery anodes, since they can overcome the pulverization and mechanical fracture during lithiation. Although thermal stability is one of the most important parameters that determine safety of Li batteries, thermal conductivity of SiNWs with Li insertion remains unclear. In this letter, using molecular dynamics simulations, we study room temperature thermal conductivity of SiNWs with Li insertion. It is found that compared with the pristine SiNW, there is as much as 60% reduction in thermal conductivity with 10% concentration of inserted Li atoms, while under the same impurity concentration the reduction in thermal conductivity of the mass-disordered SiNW is only 30%. With lattice dynamics calculations and normal mode decomposition, it is revealed that the phonon lifetimes in SiNWs decrease greatly due to strong scattering of phonons by vibrational modes of Li atoms, especially for those high frequency phonons. The observed strong phonon scattering phenomenon in Li-inserted SiNWs is similar to the phonon rattling effect. Our study serves as an exploration of thermal properties of SiNWs as Li battery anodes or weakly coupled with impurity atoms

  12. Multi-GeV electron and positron channeling in bent silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Sushko, Gennady B., E-mail: sushko@fias.uni-frankfurt.de [Goethe-Universitat Frankfurt am Main, Max-von-Laue-Str. 1, 60438 Frankfurt am Main (Germany); MBN Research Center, Altenhöferallee 3, 60438 Frankfurt am Main (Germany); Korol, Andrei V. [MBN Research Center, Altenhöferallee 3, 60438 Frankfurt am Main (Germany); St. Petersburg State Maritime University, Leninsky Ave. 101, 198262 St. Petersburg (Russian Federation); Solov’yov, Andrey V. [MBN Research Center, Altenhöferallee 3, 60438 Frankfurt am Main (Germany); A.F. Ioffe Physical-Technical Institute, Politekhnicheskaya ul. 26, 194021 St. Petersburg (Russian Federation)

    2015-07-15

    The planar channeling of 3…20 GeV electrons and positrons in bent Si(1 1 1) crystal was simulated by means of the MBN EXPLORER software package. The results of the simulations are analyzed in terms of dechanneling length characterization, angular distribution of outgoing projectiles and radiation spectrum. The results of calculations are compared with the recent experimental data.

  13. Compressibility and thermal expansion of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Lindelov, H.; Gerward, Leif

    2002-01-01

    The compressibility and thermal expansion of the cubic silicon nitride (c-Si3N4) phase have been investigated by performing in situ x-ray powder-diffraction measurements using synchrotron radiation, complemented with computer simulations by means of first-principles calculations. The bulk...... compressibility of the c-Si3N4 phase originates from the average of both Si-N tetrahedral and octahedral compressibilities where the octahedral polyhedra are less compressible than the tetrahedral ones. The origin of the unit cell expansion is revealed to be due to the increase of the octahedral Si-N and N-N bond...

  14. Strain and thermal conductivity in ultrathin suspended silicon nanowires

    Science.gov (United States)

    Fan, Daniel; Sigg, Hans; Spolenak, Ralph; Ekinci, Yasin

    2017-09-01

    We report on the uniaxial strain and thermal conductivity of well-ordered, suspended silicon nanowire arrays between 10 to 20 nm width and 22 nm half-pitch, fabricated by extreme-ultraviolet (UV) interference lithography. Laser-power-dependent Raman spectroscopy showed that nanowires connected monolithically to the bulk had a consistent strain of ˜0.1 % , whereas nanowires clamped by metal exhibited variability and high strain of up to 2.3%, having implications in strain engineering of nanowires. The thermal conductivity at room temperature was measured to be ˜1 W /m K for smooth nanowires and ˜0.1 W /m K for rougher ones, similar to results by other investigators. We found no modification of the bulk properties in terms of intrinsic scattering, and therefore, the decrease in thermal conductivity is mainly due to boundary scattering. Different types of surface roughness, such as constrictions and line-edge roughness, may play roles in the scattering of phonons of different wavelengths. Such low thermal conductivities would allow for very efficient thermal energy harvesting, approaching and passing values achieved by state-of-the-art thermoelectric materials.

  15. Anisotropic Thermal Behavior of Silicone Polymer, DC 745

    Energy Technology Data Exchange (ETDEWEB)

    Adams, Jillian Cathleen [Univ. of Oregon, Eugene, OR (United States). Dept. of Chemistry; Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Torres, Joseph Angelo [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Volz, Heather Michelle [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Gallegos, Jennifer Marie [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Yang, Dali [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-09-02

    In material applications, it is important to understand how polymeric materials behave in the various environments they may encounter. One factor governing polymer behavior is processing history. Differences in fabrication will result in parts with varied or even unintended properties. In this work, the thermal expansion behavior of silicone DC 745 is studied. Thermomechanical analysis (TMA) is used to determine changes in sample dimension resulting from changes in temperature. This technique can measure thermal events such as the linear coefficient of thermal expansion (CTE), melting, glass transitions, cure shrinkage, and internal relaxations. Using a thermomechanical analyzer (Q400 TMA), it is determined that DC 745 expands anisotropically when heated. This means that the material has a different CTE depending upon which direction is being measured. In this study, TMA experiments were designed in order to confirm anisotropic thermal behavior in multiple DC 745 samples of various ages and lots. TMA parameters such as temperature ramp rate, preload force, and temperature range were optimized in order to ensure the most accurate and useful data. A better understanding of the thermal expansion of DC 745 will allow for more accurate modeling of systems using this material.

  16. A Novel Silicon Micromachined Integrated MCM Thermal Management System

    Science.gov (United States)

    Kazmierczak, M. J.; Henderson, H. T.; Gerner, F. M.

    1997-01-01

    "Micromachining" is a chemical means of etching three-dimensional structures, typically in single- crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (Micro Electro Mechanical Systems), where in addition to the ordinary two-dimensional (planar) microelectronics, it is possible to build three-dimensional n-ticromotors, electrically- actuated raicrovalves, hydraulic systems and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor n-ticrofabfication. The University of Cincinnati group in collaboration with Karl Baker at NASA Lewis were the first to form micro heat pipes in silicon by the above techniques. Current work now in progress using MEMS technology is now directed towards the development of the next generation in MCM (Multi Chip Module) packaging. Here we propose to develop a complete electronic thermal management system which will allow densifica6on in chip stacking by perhaps two orders of magnitude. Furthermore the proposed technique will allow ordinary conu-nercial integrated chips to be utilized. Basically, the new technique involves etching square holes into a silicon substrate and then inserting and bonding commercially available integrated chips into these holes. For example, over a 100 1/4 in. by 1 /4 in. integrated chips can be placed on a 4 in. by 4 in. silicon substrate to form a Multi-Chip Module (MCM). Placing these MCM's in-line within an integrated rack then allows for three-diniensional stacking. Increased miniaturization of microelectronic circuits will lead to very high local heat fluxes. A high performance thermal management system will be specifically designed to remove the generated energy. More specifically, a compact heat exchanger with milli / microchannels will be developed and tested to remove the heat through the back side of this MCM assembly for moderate and high

  17. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    Hasenack, C.M.

    1986-01-01

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 1200 0 C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author) [pt

  18. Synthesis and thermal conductivity of type II silicon clathrates

    Science.gov (United States)

    Beekman, M.; Nolas, G. S.

    2006-08-01

    We have synthesized and characterized polycrystalline Na 1Si 136 and Na 8Si 136, compounds possessing the type II clathrate hydrate crystal structure. Resistivity measurements from 10 to 300 K indicate very large resistivities in this temperature range, with activated temperature dependences indicative of relatively large band gap semiconductors. The thermal conductivity is very low; two orders-of-magnitude lower than that of diamond-structure silicon at room temperature. The thermal conductivity of Na 8Si 136 displays a temperature dependence that is atypical of crystalline solids and more indicative of amorphous materials. This work is part of a continuing effort to explore the many different compositions and structure types of clathrates, a class of materials that continues to be of interest for scientific and technological applications.

  19. Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

    Directory of Open Access Journals (Sweden)

    Afarin Bahrami

    2012-01-01

    Full Text Available Porous silicon (PSi layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm2 fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM. Photoacoustic spectroscopy (PAS measurements were carried out to measure the thermal diffusivity (TD of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.

  20. Applications of positron depth profiling

    International Nuclear Information System (INIS)

    Hakvoort, R.A.

    1993-01-01

    In this thesis some contributions of the positron-depth profiling technique to materials science have been described. Following studies are carried out: Positron-annihilation measurements on neon-implanted steel; Void creation in silicon by helium implantation; Density of vacancy-type defects present in amorphous silicon prepared by ion implantation; Measurements of other types of amorphous silicon; Epitaxial cobalt disilicide prepared by cobalt outdiffusion. Positron-annihilation experiments on low-pressure CVD silicon-nitride films. (orig./MM)

  1. Applications of positron depth profiling

    Energy Technology Data Exchange (ETDEWEB)

    Hakvoort, R A

    1993-12-23

    In this thesis some contributions of the positron-depth profiling technique to materials science have been described. Following studies are carried out: Positron-annihilation measurements on neon-implanted steel; Void creation in silicon by helium implantation; Density of vacancy-type defects present in amorphous silicon prepared by ion implantation; Measurements of other types of amorphous silicon; Epitaxial cobalt disilicide prepared by cobalt outdiffusion. Positron-annihilation experiments on low-pressure CVD silicon-nitride films. (orig./MM).

  2. Positron-electron autocorrelation function study of E-center in phosphorus-doped silicon

    International Nuclear Information System (INIS)

    Ho, K.F.; Beling, C.D.; Fung, S.; Biasini, M.; Ferro, G.; Gong, M.

    2004-01-01

    Two dimensional fourier transformed angular correlation of annihilation radiation (2D-FT-ACAR) spectra have been taken for 10 19 cm -3 phosphorus-doped Si in the as grown state and after being subjected to 1.8 MeV e - fluences of 2 x 10 18 cm -2 . In the spectra of the irradiated samples, the zero-crossing points are observed to displace outwards from the bravais lattice positions. It is suggested that this results from positrons annihilating with electrons in localized orbitals at the defect site. An attempt is made to extract just the component of the defect's positron-electron autocorrelation function that relates to the localized defect orbitals. It is argued that such an extracted real-space function may provide a suitable means for obtaining a mapping of localized defect orbitals. (orig.)

  3. Helium implanted RAFM steels studied by positron beam Doppler Broadening and Thermal Desorption Spectroscopy

    International Nuclear Information System (INIS)

    Carvalho, I; Schut, H; Fedorov, A; Luzginova, N; Desgardin, P; Sietsma, J

    2013-01-01

    Reduced Activation Ferritic/Martensitic steels are being extensively studied because of their foreseen application in fusion and Generation IV fission reactors. To mimic neutron irradiation conditions, Eurofer97 samples were implanted with helium ions at energies of 500 keV and 2 MeV and doses of 5x10 15 -10 16 He /cm 2 , creating atomic displacements in the range 0.07–0.08 dpa. The implantation induced defects were characterized by positron beam Doppler Broadening (DB) and Thermal Desorption Spectroscopy (TDS). The DB data could be fitted with one or two layers of material, depending on the He implantation energy. The S and W values obtained for the implanted regions suggest the presence of not only vacancy clusters but also positron traps of the type present in a sub-surface region found on the reference sample. The traps found in the implanted layers are expected to be He n V m clusters. For the 2 MeV, 10 16 He/cm 2 implanted sample, three temperature regions can be observed in the TDS data. Peaks below 450 K can be ascribed to He released from vacancies in the neighbourhood of the surface, the phase transition is found at 1180 K and the peak at 1350 K is likely caused by the migration of bubbles.

  4. Influence of thermal effects induced by nonlinear absorption on four-wave mixing in silicon waveguides

    DEFF Research Database (Denmark)

    Pu, Minhao; Chen, Yaohui; Yvind, Kresten

    2014-01-01

    Influence of thermal effects induced by nonlinear absorption on four-wave mixing in silicon waveguides is investigated. A conversion bandwidth reduction up to 63% is observed in simulation due to the thermal effects.......Influence of thermal effects induced by nonlinear absorption on four-wave mixing in silicon waveguides is investigated. A conversion bandwidth reduction up to 63% is observed in simulation due to the thermal effects....

  5. Positron probing of open vacancy volume of phosphorus-vacancy complexes in float-zone n-type silicon irradiated by 0.9-MeV electrons and by 15-MeV protons

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, Nikolay [Department of Physics, Martin Luther University Halle (Germany); Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Institute of Ion-Plasma and Laser Technologies (Institute of Electronics), Tashkent (Uzbekistan); Emtsev, Vadim; Oganesyan, Gagik [Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Elsayed, Mohamed [Department of Physics, Martin Luther University Halle (Germany); Faculty of Science, Department of Physics, Minia University (Egypt); Krause-Rehberg, Reinhard [Department of Physics, Martin Luther University Halle (Germany); Abrosimov, Nikolay [Leibniz Institute for Crystal Growth, Berlin (Germany); Kozlovski, Vitalii [St. Petersburg State Polytechnical University (Russian Federation)

    2017-07-15

    For the first time the samples, cut from the same wafer of crystals of float-zone silicon, n-FZ-Si(P) and n-FZ-Si(Bi), were subjected to irradiation with 0.9-MeV electrons and 15-MeV protons at RT for studying them by low-temperature positron annihilation lifetime spectroscopy. Measurements of Hall effect have been used for the materials characterization. The discussion is focused on the open vacancy volume (V{sub op}) of the thermally stable group-V-impurity-vacancy complexes comprising the phosphorus atoms; the bismuth-related vacancy complexes are briefly considered. The data of positron probing of PV pairs (E-centers), divacancies, and the thermally stable defects in the irradiated n-FZ-Si(P) materials are compared. Beyond a reliable detecting of the defect-related positron annihilation lifetime in the course of isochronal annealing at ∝ 500 C, the recovery of concentration of phosphorus-related shallow donor states continues up to ∝650-700 C. The open vacancy volumes V{sub op} to be characterized by long positron lifetimes Δτ{sub 2} ∝271-289 ps in (gr.-V-atom)-V{sub op} complexes are compared with theoretical data available for the vacancies, τ(V{sub 1}), and divacancies, τ(V{sub 2}). The extended semi-vacancies, 2V{sub s-ext}, and relaxed vacancies, 2V{sub inw}, are proposed as the open volume V{sub op} in (gr.-V-atom)-V{sub op} complexes. It is argued that at high annealing temperature the defect P{sub s}-V{sub op}-P{sub s} is decomposed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Studies Of Oxidation And Thermal Reduction Of The Cu(100) Surface Using Positron Annihilation Induced Auger Electron Spectroscopy

    Science.gov (United States)

    Fazleev, N. G.; Nadesalingam, M. P.; Maddox, W.; Weiss, A. H.

    2011-06-01

    Positron annihilation induced Auger electron spectroscopy (PAES) measurements from the surface of an oxidized Cu(100) single crystal show a large increase in the intensity of the annihilation induced Cu M2,3VV Auger peak as the sample is subjected to a series of isochronal anneals in vacuum up to annealing temperature 300 °C. The PAES intensity then decreases monotonically as the annealing temperature is increased to ˜550 °C. Experimental positron annihilation probabilities with Cu 3p and O 1s core electrons are estimated from the measured intensities of the positron annihilation induced Cu M2,3VV and O KLL Auger transitions. PAES results are analyzed by performing calculations of positron surface states and annihilation probabilities of the surface-trapped positrons with relevant core electrons taking into account the charge redistribution at the surface and various surface structures associated with low and high oxygen coverages. The variations in atomic structure and chemical composition of the topmost layers of the oxidized Cu(100) surface are found to affect localization and spatial extent of the positron surface state wave function. The computed positron binding energy and annihilation characteristics reveal their sensitivity to charge transfer effects, atomic structure and chemical composition of the topmost layers of the oxidized Cu(100) surface. Theoretical positron annihilation probabilities with Cu 3p and O 1s core electrons computed for the oxidized Cu(100) surface are compared with experimental ones. The obtained results provide a demonstration of thermal reduction of the copper oxide surface after annealing at 300 °C followed by re-oxidation of the Cu(100) surface at higher annealing temperatures presumably due to diffusion of subsurface oxygen to the surface.

  7. Studies Of Oxidation And Thermal Reduction Of The Cu(100) Surface Using Positron Annihilation Induced Auger Electron Spectroscopy

    International Nuclear Information System (INIS)

    Fazleev, N. G.; Nadesalingam, M. P.; Maddox, W.; Weiss, A. H.

    2011-01-01

    Positron annihilation induced Auger electron spectroscopy (PAES) measurements from the surface of an oxidized Cu(100) single crystal show a large increase in the intensity of the annihilation induced Cu M2,3VV Auger peak as the sample is subjected to a series of isochronal anneals in vacuum up to annealing temperature 300 deg. C. The PAES intensity then decreases monotonically as the annealing temperature is increased to ∼550 deg. C. Experimental positron annihilation probabilities with Cu 3p and O 1s core electrons are estimated from the measured intensities of the positron annihilation induced Cu M 2,3 VV and O KLL Auger transitions. PAES results are analyzed by performing calculations of positron surface states and annihilation probabilities of the surface-trapped positrons with relevant core electrons taking into account the charge redistribution at the surface and various surface structures associated with low and high oxygen coverages. The variations in atomic structure and chemical composition of the topmost layers of the oxidized Cu(100) surface are found to affect localization and spatial extent of the positron surface state wave function. The computed positron binding energy and annihilation characteristics reveal their sensitivity to charge transfer effects, atomic structure and chemical composition of the topmost layers of the oxidized Cu(100) surface. Theoretical positron annihilation probabilities with Cu 3p and O 1s core electrons computed for the oxidized Cu(100) surface are compared with experimental ones. The obtained results provide a demonstration of thermal reduction of the copper oxide surface after annealing at 300 deg. C followed by re-oxidation of the Cu(100) surface at higher annealing temperatures presumably due to diffusion of subsurface oxygen to the surface.

  8. Thermally stimulated current method applied to highly irradiated silicon diodes

    CERN Document Server

    Pintilie, I; Pintilie, I; Moll, Michael; Fretwurst, E; Lindström, G

    2002-01-01

    We propose an improved method for the analysis of Thermally Stimulated Currents (TSC) measured on highly irradiated silicon diodes. The proposed TSC formula for the evaluation of a set of TSC spectra obtained with different reverse biases leads not only to the concentration of electron and hole traps visible in the spectra but also gives an estimation for the concentration of defects which not give rise to a peak in the 30-220 K TSC temperature range (very shallow or very deep levels). The method is applied to a diode irradiated with a neutron fluence of phi sub n =1.82x10 sup 1 sup 3 n/cm sup 2.

  9. Thermal performances of ETFE cushion roof integrated amorphous silicon photovoltaic

    International Nuclear Information System (INIS)

    Hu, Jianhui; Chen, Wujun; Qiu, Zhenyu; Zhao, Bing; Zhou, Jinyu; Qu, Yegao

    2015-01-01

    Highlights: • Thermal performances of a three layer ETFE cushion integrated a-Si PV is evaluated. • Temperature of a-Si PV obviously affects temperature field and temperature boundary. • The maximum temperature difference of 3.4 K between measured and numerical results. • Main transport mechanisms in upper and lower chambers are convection and conduction. • Heat transfer coefficients of this roof are less than those of other ETFE cushion roofs. - Abstract: Thermal performances of the ETFE cushion roof integrated amorphous silicon photovoltaic (a-Si PV) are essential to estimate building performances, such as temperature distribution and heat transfer coefficient. To investigate these thermal performances, an experimental mock-up composed of a-Si PV and a three-layer ETFE cushion roof was built and the experiment was carried out under summer sunny condition. Meanwhile, numerical model with real boundary conditions was performed in this paper. The experimental results show that the temperature sequence of the three layers was the middle, top and bottom layer and that the PV temperature caused by solar irradiance was 353.8 K. This gives evidence that the PV has a significant effect on the temperature distribution. The experimental temperature was in good agreement with the corresponding location of the numerical temperature since the maximum temperature difference was only 3.4 K. Therefore, the numerical results were justified and then used to analyze the airflow characteristics and calculate the thermal performances. For the airflow characteristics, it is found that the temperature distribution was not uniform and the main transport mechanisms in the upper and lower chambers formed by the three layers were the convection and conduction, respectively. For the thermal performances, the surface convective heat transfer coefficients were obtained, which have validated that thermal performances of the three-layer ETFE cushion integrated a-Si PV are better than

  10. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

    Science.gov (United States)

    Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

    2013-03-02

    Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

  11. The role of nitrogen in the formation of oxygen-related thermal donors in silicon

    International Nuclear Information System (INIS)

    Griffin, J.A.; Hartung, J.; Weber, J.

    1989-01-01

    Nitrogen doped silicon is investigated by Photothermal Ionisation Spectroscopy (PTIS) and Infrared Absorption (IR). The Shallow Thermal Donors (STD) are observed in this nitrogen doped Cz-silicon as well as the deeper Thermal Donors (TD). The Thermal Donor Growth in nitrogen doped material is reduced in comparison to nominally undoped oxygen-rich silicon. The half-widths of the spectral lines arising from the STD-transitions are observed to be dependent on the nitrogen concentration. The results suggest only a catalytic role of N in the STD-growth. (author) 13 refs., 3 figs., 1 tab

  12. Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies

    DEFF Research Database (Denmark)

    Mäkinen, S.; Rajainmäki, H.; Linderoth, Søren

    1991-01-01

    High-purity single-crystal samples of float-zoned Si have been implanted with 6.95-MeV protons and with 25-MeV 3He2 ions at 15 K, and the positron-lifetime technique has been used to identify the defects created in the samples, and to study the effects of H and He on the annealing of point defects...... in Si. The results have been compared with those of proton-irradiated Si. A 100–300-K annealing stage was clearly observed in hydrogen (H+) -implanted Si, and this stage was almost identical to that in the p-irradiated Si. The final annealing state of the H+-implanted Si started at about 400 K......, and it is connected to annealing out of negatively charged divacancy-oxygen pairs. This stage was clearly longer than that for the p-irradiated Si, probably due to the breakup of Si-H bonds at about 550 K. The 100-K annealing stage was not seen with the He-implanted samples. This has been explained by assuming...

  13. Helium implanted Eurofer97 characterized by positron beam Doppler broadening and Thermal Desorption Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Carvalho, I., E-mail: i.carvalho@m2i.nl [Materials Innovation Institute (M2i), Delft (Netherlands); Schut, H. [Delft University of Technology, Faculty of Applied Sciences, Delft (Netherlands); Fedorov, A.; Luzginova, N. [Nuclear Research and Consultancy Group (NRG), Petten (Netherlands); Desgardin, P. [CEMHTI-CNRS, 3A Rue de la Férolerie, 45071 Orléans Cedex (France); Sietsma, J. [Delft University of Technology, Faculty of Mechanical, Maritime and Materials Engineering, Delft (Netherlands)

    2013-11-15

    Reduced Activation Ferritic/Martensitic steels are being extensively studied because of their foreseen application in fusion and Generation IV fission reactors. To produce irradiation induced defects, Eurofer97 samples were implanted with helium at energies of 500 keV and 2 MeV and doses of 1 × 10{sup 15}–10{sup 16} He/cm{sup 2}, creating atomic displacements in the range 0.07–0.08 dpa. The implantation induced defects were characterized by positron beam Doppler Broadening (DB) and Thermal Desorption Spectroscopy (TDS). Results show that up to ∼600 K peaks that can be attributed to He desorption from overpressured He{sub n}V{sub m} (n > m) clusters and vacancy assisted mechanism in the case of helium in the substitutional position. The temperature range 600–1200 K is related to the formation of larger clusters He{sub n}V{sub m} (n < m). The dissociation of the HeV and the phase transition attributed to a sharp peak in the TDS spectra at 1200 K. Above this temperature, the release of helium from bubbles is observed.

  14. Thermal Stress of Surface of Mold Cavities and Parting Line of Silicone Molds

    Directory of Open Access Journals (Sweden)

    Bajčičák Martin

    2014-06-01

    Full Text Available The paper is focused on the study of thermal stress of surface of mold cavities and parting line of silicone molds after pouring. The silicone mold White SD - THT was thermally stressed by pouring of ZnAl4Cu3 zinc alloy with pouring cycle 20, 30 and 40 seconds. The most thermally stressed part of surface at each pouring cycle is gating system and mold cavities. It could be further concluded that linear increase of the pouring cycle time leads to the exponential increasing of the maximum temperature of mold surface after its cooling. The elongated pouring cycle increases the temperature accumulated on the surface of cavities and the ability of silicone mold to conduct the heat on its surface decreases, because the low thermal conductivity of silicone molds enables the conduction of larger amount of heat into ambient environment.

  15. Anharmonicity Rise the Thermal Conductivity in Amorphous Silicon

    Science.gov (United States)

    Lv, Wei; Henry, Asegun

    We recently proposed a new method called Direct Green-Kubo Modal Analysis (GKMA) method, which has been shown to calculate the thermal conductivity (TC) of several amorphous materials accurately. A-F method has been widely used for amorphous materials. However, researchers have found out that it failed on several different materials. The missing component of A-F method is the harmonic approximation and considering only the interactions of modes with similar frequencies, which neglect interactions of modes with large frequency difference. On the contrary, GKMA method, which is based on molecular dynamics, intrinsically includes all types of phonon interactions. In GKMA method, each mode's TC comes from both mode self-correlations (autocorrelations) and mode-mode correlations (crosscorrelations). We have demonstrated that the GKMA predicted TC of a-Si from Tersoff potential is in excellent agreement with one of experimental results. In this work, we will present the GKMA applications on a-Si using multiple potentials and gives us more insight of the effect of anharmonicity on the TC of amorphous silicon. This research was supported Intel grant AGMT DTD 1-15-13 and computational resources by NSF supported XSEDE resources under allocations DMR130105 and TG- PHY130049.

  16. Simulation of the diffusion of implanted impurities in silicon structures at the rapid thermal annealing

    International Nuclear Information System (INIS)

    Komarov, F.F.; Komarov, A.F.; Mironov, A.M.; Makarevich, Yu.V.; Miskevich, S.A.; Zayats, G.M.

    2011-01-01

    Physical and mathematical models and numerical simulation of the diffusion of implanted impurities during rapid thermal treatment of silicon structures are discussed. The calculation results correspond to the experimental results with a sufficient accuracy. A simulation software system has been developed that is integrated into ATHENA simulation system developed by Silvaco Inc. This program can simulate processes of the low-energy implantation of B, BF 2 , P, As, Sb, C ions into the silicon structures and subsequent rapid thermal annealing. (authors)

  17. Thermal conductivity anisotropy in holey silicon nanostructures and its impact on thermoelectric cooling

    Science.gov (United States)

    Ren, Zongqing; Lee, Jaeho

    2018-01-01

    Artificial nanostructures have improved prospects of thermoelectric systems by enabling selective scattering of phonons and demonstrating significant thermal conductivity reductions. While the low thermal conductivity provides necessary temperature gradients for thermoelectric conversion, the heat generation is detrimental to electronic systems where high thermal conductivity are preferred. The contrasting needs of thermal conductivity are evident in thermoelectric cooling systems, which call for a fundamental breakthrough. Here we show a silicon nanostructure with vertically etched holes, or holey silicon, uniquely combines the low thermal conductivity in the in-plane direction and the high thermal conductivity in the cross-plane direction, and that the anisotropy is ideal for lateral thermoelectric cooling. The low in-plane thermal conductivity due to substantial phonon boundary scattering in small necks sustains large temperature gradients for lateral Peltier junctions. The high cross-plane thermal conductivity due to persistent long-wavelength phonons effectively dissipates heat from a hot spot to the on-chip cooling system. Our scaling analysis based on spectral phonon properties captures the anisotropic size effects in holey silicon and predicts the thermal conductivity anisotropy ratio up to 20. Our numerical simulations demonstrate the thermoelectric cooling effectiveness of holey silicon is at least 30% greater than that of high-thermal-conductivity bulk silicon and 400% greater than that of low-thermal-conductivity chalcogenides; these results contrast with the conventional perception preferring either high or low thermal conductivity materials. The thermal conductivity anisotropy is even more favorable in laterally confined systems and will provide effective thermal management solutions for advanced electronics.

  18. Thermal conductivity anisotropy in holey silicon nanostructures and its impact on thermoelectric cooling.

    Science.gov (United States)

    Ren, Zongqing; Lee, Jaeho

    2018-01-26

    Artificial nanostructures have improved prospects of thermoelectric systems by enabling selective scattering of phonons and demonstrating significant thermal conductivity reductions. While the low thermal conductivity provides necessary temperature gradients for thermoelectric conversion, the heat generation is detrimental to electronic systems where high thermal conductivity are preferred. The contrasting needs of thermal conductivity are evident in thermoelectric cooling systems, which call for a fundamental breakthrough. Here we show a silicon nanostructure with vertically etched holes, or holey silicon, uniquely combines the low thermal conductivity in the in-plane direction and the high thermal conductivity in the cross-plane direction, and that the anisotropy is ideal for lateral thermoelectric cooling. The low in-plane thermal conductivity due to substantial phonon boundary scattering in small necks sustains large temperature gradients for lateral Peltier junctions. The high cross-plane thermal conductivity due to persistent long-wavelength phonons effectively dissipates heat from a hot spot to the on-chip cooling system. Our scaling analysis based on spectral phonon properties captures the anisotropic size effects in holey silicon and predicts the thermal conductivity anisotropy ratio up to 20. Our numerical simulations demonstrate the thermoelectric cooling effectiveness of holey silicon is at least 30% greater than that of high-thermal-conductivity bulk silicon and 400% greater than that of low-thermal-conductivity chalcogenides; these results contrast with the conventional perception preferring either high or low thermal conductivity materials. The thermal conductivity anisotropy is even more favorable in laterally confined systems and will provide effective thermal management solutions for advanced electronics.

  19. Positron annihilation and thermoluminescence studies of thermally induced defects in α-Al2O3 single crystals

    International Nuclear Information System (INIS)

    Muthe, K P; Gupta, S K; Sudarshan, K; Pujari, P K; Kulkarni, M S; Rawat, N S; Bhatt, B C

    2009-01-01

    α-Al 2 O 3 crystals were subjected to different thermal treatments at a temperature of 1500 deg. C in a strongly reducing ambience of carbon and vacuum. Positron annihilation spectroscopy (PAS) and thermally stimulated luminescence (TL) studies were carried out to understand the nature of defects generated. Results show the presence of aluminium vacancies in crystals annealed in vacuum. On annealing in the presence of graphite, ingress of carbon in these vacancies is indicated by different PAS measurements. A simultaneous enhancement of dosimetry properties has been observed. The study provides evidence that association of carbon with aluminium vacancies helps in creation of effective dosimetry traps.

  20. Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography.

    Science.gov (United States)

    Van Elburg, Devin J; Noble, Scott D; Hagey, Simone; Goertzen, Andrew L

    2018-02-26

    Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials ('100MP', 'A100', and 'GPA') were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude degradation

  1. Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography

    Science.gov (United States)

    Van Elburg, Devin J.; Noble, Scott D.; Hagey, Simone; Goertzen, Andrew L.

    2018-03-01

    Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials (‘100MP’, ‘A100’, and ‘GPA’) were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude

  2. Thermally-isolated silicon-based integrated circuits and related methods

    Science.gov (United States)

    Wojciechowski, Kenneth; Olsson, Roy H.; Clews, Peggy J.; Bauer, Todd

    2017-05-09

    Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

  3. Method of making thermally-isolated silicon-based integrated circuits

    Science.gov (United States)

    Wojciechowski, Kenneth; Olsson, Roy; Clews, Peggy J.; Bauer, Todd

    2017-11-21

    Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

  4. Alternative method for steam generation for thermal oxidation of silicon

    Science.gov (United States)

    Spiegelman, Jeffrey J.

    2010-02-01

    Thermal oxidation of silicon is an important process step in MEMS device fabrication. Thicker oxide layers are often used as structural components and can take days or weeks to grow, causing high gas costs, maintenance issues, and a process bottleneck. Pyrolytic steam, which is generated from hydrogen and oxygen combustion, was the default process, but has serious drawbacks: cost, safety, particles, permitting, reduced growth rate, rapid hydrogen consumption, component breakdown and limited steam flow rates. Results from data collected over a 24 month period by a MEMS manufacturer supports replacement of pyrolytic torches with RASIRC Steamer technology to reduce process cycle time and enable expansion previously limited by local hydrogen permitting. Data was gathered to determine whether Steamers can meet or exceed pyrolytic torch performance. The RASIRC Steamer uses de-ionized water as its steam source, eliminating dependence on hydrogen and oxygen. A non-porous hydrophilic membrane selectively allows water vapor to pass. All other molecules are greatly restricted, so contaminants in water such as dissolved gases, ions, total organic compounds (TOC), particles, and metals can be removed in the steam phase. The MEMS manufacturer improved growth rate by 7% over the growth range from 1μm to 3.5μm. Over a four month period, wafer uniformity, refractive index, wafer stress, and etch rate were tracked with no significant difference found. The elimination of hydrogen generated a four-month return on investment (ROI). Mean time between failure (MTBF) was increased from 3 weeks to 32 weeks based on three Steamers operating over eight months.

  5. Three Dimensional Positron Annihilation Momentum Measurement Technique Applied to Measure Oxygen-Atom Defects in 6H Silicon Carbide

    Science.gov (United States)

    2010-03-01

    Stormer et al [9] measured 6H SiC’s positron work function (Φ + ),-3.0 ± 0.2 eV, which is the same value for the most commonly used positron...Subjected to various Treatments‖, Materials Science Forum, Vols. 255-7, pp. 662-4. 9. Stormer J, Goodyear A, Anwand W, Brauer G, Coleman P, and

  6. MEMS monocrystalline-silicon based thermal devices for chemical and microfluidic applications

    NARCIS (Netherlands)

    Mihailovic, M.

    2011-01-01

    This thesis explores the employment of monocrystalline silicon in microsystems as an active material for different thermal functions, such as heat generation and heat transfer by conduction. In chapter 1 applications that need thermal micro devices, micro heaters and micro heat exchangers, are

  7. Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique

    International Nuclear Information System (INIS)

    Sheng, Chan Kok; Mahmood Mat Yunus, W.; Yunus, Wan Md. Zin Wan; Abidin Talib, Zainal; Kassim, Anuar

    2008-01-01

    In this work, the porous silicon layer was prepared by the electrochemical anodization etching process on n-type and p-type silicon wafers. The formation of the porous layer has been identified by photoluminescence and SEM measurements. The optical absorption, energy gap, carrier transport and thermal properties of n-type and p-type porous silicon layers were investigated by analyzing the experimental data from photoacoustic measurements. The values of thermal diffusivity, energy gap and carrier transport properties have been found to be porosity-dependent. The energy band gap of n-type and p-type porous silicon layers was higher than the energy band gap obtained for silicon substrate (1.11 eV). In the range of porosity (50-76%) of the studies, our results found that the optical band-gap energy of p-type porous silicon (1.80-2.00 eV) was higher than that of the n-type porous silicon layer (1.70-1.86 eV). The thermal diffusivity value of the n-type porous layer was found to be higher than that of the p-type and both were observed to increase linearly with increasing layer porosity

  8. An anisotropic thermal-stress model for through-silicon via

    Science.gov (United States)

    Liu, Song; Shan, Guangbao

    2018-02-01

    A two-dimensional thermal-stress model of through-silicon via (TSV) is proposed considering the anisotropic elastic property of the silicon substrate. By using the complex variable approach, the distribution of thermal-stress in the substrate can be characterized more accurately. TCAD 3-D simulations are used to verify the model accuracy and well agree with analytical results (model can be integrated into stress-driven design flow for 3-D IC , leading to the more accurate timing analysis considering the thermal-stress effect. Project supported by the Aerospace Advanced Manufacturing Technology Research Joint Fund (No. U1537208).

  9. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa

    2013-05-30

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  10. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

    2013-01-01

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  11. Influence of silicon dangling bonds on germanium thermal diffusion within SiO{sub 2} glass

    Energy Technology Data Exchange (ETDEWEB)

    Barba, D.; Martin, F.; Ross, G. G. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Cai, R. S.; Wang, Y. Q. [The Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Demarche, J.; Terwagne, G. [LARN, Centre de Recherche en Physique de la Matière et du Rayonnement (PMR), University of Namur (FUNDP), B-5000 Namur (Belgium); Rosei, F. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Center for Self-Assembled Chemical Structures, McGill University, Montreal, Quebec H3A 2K6 (Canada)

    2014-03-17

    We study the influence of silicon dangling bonds on germanium thermal diffusion within silicon oxide and fused silica substrates heated to high temperatures. By using scanning electron microscopy and Rutherford backscattering spectroscopy, we determine that the lower mobility of Ge found within SiO{sub 2}/Si films can be associated with the presence of unsaturated SiO{sub x} chemical bonds. Comparative measurements obtained by x-ray photoelectron spectroscopy show that 10% of silicon dangling bonds can reduce Ge desorption by 80%. Thus, the decrease of the silicon oxidation state yields a greater thermal stability of Ge inside SiO{sub 2} glass, which could enable to considerably extend the performance of Ge-based devices above 1300 K.

  12. Thermal stability of grain boundaries in nanocrystalline Zn studied by positron lifetime spectroscopy

    International Nuclear Information System (INIS)

    Zhou Kai; Li Hui; Pang Jinbiao; Wang Zhu

    2012-01-01

    Nanocrystalline Zn prepared by compacting nanoparticles with mean grain size about 55 nm at 15 MPa has been studied by positron lifetime spectroscopy. For the bulk Zn sample, the vacancy defect is annealed out at about 350 °C, but for the nanocrystalline Zn sample, the vacancy cluster in grain boundaries is quite difficult to be annealed out even at very high temperature (410 °C). In the grain boundaries of nanocrystalline Zn, the small free volume defect (not larger than divacancy) is dominant according to the high relative intensity for the short positron lifetime (τ 1 ). The oxide (ZnO) inside the grain boundaries has been found having an effect to hinder the decrease of average positron lifetime (τ av ), which probably indicates that the oxide stabilizes the microstructure of the grain boundaries. This stabilization is very important for the nanocrystalline materials using as radiation resistant materials.

  13. Thermal simulations of the new design for the BELLE silicon vertex detector

    International Nuclear Information System (INIS)

    Dragic, J.

    2000-01-01

    Full text: The experienced imperfections of the BELLE silicon vertex detector, SVD1 motioned the design of a new detector, SVD2, which targets on improving the main weaknesses encountered in the old design. In this report we focus on tile thermal aspects of the SVD2 ladder, whereby sufficient cooling of the detector is necessary in order to minimise the detector leakage currents. It is estimated that reducing the temperature of the silicon detector from 25 deg C to 15 deg C would result in a 50% reduction in leak current. Further, cooling the detector would help minimize mechanical stresses from the thermal cycling. Our task is to ensure that the heat generated by the readout chips is conducted down the SVD hybrid unit effectively, such that the chip and the hybrid temperature does not overbear the SVD silicon sensor temperature. We considered the performance of two materials to act as a heat spreading plate which is glued between the two hybrids in order to improve the heat conductivity of the hybrid unit, namely Copper and Thermal Pyrolytic Graphite (TPG). The effects of other ladder components were also considered in order to enhance the cooling of the silicon detectors. Finite element analysis with ANSYS software was used to simulate the thermal conditions of the SVD2 hybrid unit, in accordance with the baseline design for the mechanical structure of the ladder. It was found that Cu was a preferred material as it achieved equivalent silicon sensor cooling (3.6 deg C above cooling point), while its mechanical properties rendered it a lot more practical. Suppressing, the thermal path via a rib support block, by increasing its thermal resistivity, as well as increasing thermal conductivity of the ribs in the hybrid region, were deemed essential in the effective cooling of the silicon sensors

  14. Surface roughening of silicon, thermal silicon dioxide, and low-k dielectric coral films in argon plasma

    International Nuclear Information System (INIS)

    Yin Yunpeng; Sawin, Herbert H.

    2008-01-01

    The surface roughness evolutions of single crystal silicon, thermal silicon dioxide (SiO 2 ), and low dielectric constant film coral in argon plasma have been measured by atomic force microscopy as a function of ion bombardment energy, ion impingement angle, and etching time in an inductively coupled plasma beam chamber, in which the plasma chemistry, ion energy, ion flux, and ion incident angle can be adjusted independently. The sputtering yield (or etching rate) scales linearly with the square root of ion energy at normal impingement angle; additionally, the angular dependence of the etching yield of all films in argon plasma followed the typical sputtering yield curve, with a maximum around 60 deg. -70 deg. off-normal angle. All films stayed smooth after etching at normal angle but typically became rougher at grazing angles. In particular, at grazing angles the rms roughness level of all films increased if more material was removed; additionally, the striation structure formed at grazing angles can be either parallel or transverse to the beam impingement direction, which depends on the off-normal angle. More interestingly, the sputtering caused roughness evolution at different off-normal angles can be qualitatively explained by the corresponding angular dependent etching yield curve. In addition, the roughening at grazing angles is a strong function of the type of surface; specifically, coral suffers greater roughening compared to thermal silicon dioxide

  15. Radiation emission phenomena in bent silicon crystals: Theoretical and experimental studies with 120 GeV/c positrons

    International Nuclear Information System (INIS)

    Lietti, D.; Bagli, E.; Baricordi, S.; Berra, A.; Bolognini, D.; Chirkov, P.N.; Dalpiaz, P.; Della Mea, G.; De Salvador, D.; Hasan, S.; Guidi, V.; Maisheev, V.A.

    2012-01-01

    The radiation emission phenomena in bent silicon crystals have been thoroughly investigated at the CERN SPS-H4 beamline. The incoming and outgoing trajectories of charged particles impinging on a silicon strip crystal have been reconstructed by high precision silicon microstrip detectors. A spectrometer method has been exploited to measure the radiation emission spectra both in volume reflection and in channeling. The theoretical method used to evaluate the photon spectra is presented and compared with the experimental results.

  16. Thermal Response of Cooled Silicon Nitride Plate Due to Thermal Conductivity Effects Analyzed

    Science.gov (United States)

    Baaklini, George Y.; Abdul-Aziz, Ali; Bhatt, Ramakrishna

    2003-01-01

    Lightweight, strong, tough high-temperature materials are required to complement efficiency improvements for next-generation gas turbine engines that can operate with minimum cooling. Because of their low density, high-temperature strength, and high thermal conductivity, ceramics are being investigated as materials to replace the nickelbase superalloys that are currently used for engine hot-section components. Ceramic structures can withstand higher operating temperatures and a harsh combustion environment. In addition, their low densities relative to metals help reduce component mass (ref. 1). To complement the effectiveness of the ceramics and their applicability for turbine engine applications, a parametric study using the finite element method is being carried out. The NASA Glenn Research Center remains very active in conducting and supporting a variety of research activities related to ceramic matrix composites through both experimental and analytical efforts (ref. 1). The objectives of this work are to develop manufacturing technology, develop a thermal and environmental barrier coating (TBC/EBC), develop an analytical modeling capability to predict thermomechanical stresses, and perform a minimal burner rig test on silicon nitride (Si3N4) and SiC/SiC turbine nozzle vanes under simulated engine conditions. Moreover, we intend to generate a detailed database of the material s property characteristics and their effects on structural response. We expect to offer a wide range of data since the modeling will account for other variables, such as cooling channel geometry and spacing. Comprehensive analyses have begun on a plate specimen with Si3N4 cooling holes.

  17. Properties of point defects either native or induced by irradiation in the 3C and 6H polytypes of silicon carbide determined by positron annihilation and EPR

    International Nuclear Information System (INIS)

    Kerbiriou, X.

    2006-02-01

    Potential applications of silicon carbide (SiC) in micro-electronics have justified many studies on point defects, which play an important role in the electrical compensation. Moreover, this material has many assets to take part in the fissile materials confining in the gas cooled reactors of the future (4. generation). In this thesis, we have used Electronic Paramagnetic Resonance and Positron Annihilation Spectroscopy to study the properties of point defects (nature, size, charge state, migration and agglomeration during annealing), either native or induced by irradiation with various particles (H + , e - , carbon ions), in the 3C and 6H polytypes of SiC. The positron annihilation study of native defects in 6H-SiC has shown the presence of a strong concentration of non-vacancy traps of acceptor type, which are not present in the 3C-SiC crystals. The nature of the defects detected after irradiation with low energy electrons (190 keV) depends on the polytype. Indeed, while silicon Frenkel pairs and carbon mono-vacancies are detected in the 6H crystals, only carbon mono-vacancies are detected in the 3C crystals. We propose that these differences concerning the populations of detected point defects result from different values of the silicon displacement threshold energy for the two polytypes (approximately 20 eV for 6H and 25 V for 3C). In addition, the irradiations with 12 MeV protons and 132 MeV carbon ions have created silicon mono-vacancies as well as VSi-VC di-vacancies. Neither the particle (protons or ions carbon), nor the polytype (3C or 6H) influence the nature of the generated defects. Finally the study of the annealing of 6H-SiC monocrystals irradiated with 12 MeV protons have revealed several successive processes. The most original result is the agglomeration of the silicon mono-vacancies with the VSi-VC di-vacancies which leads to the formation of VSi-VC-VSi tri-vacancies. (author)

  18. Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

    Science.gov (United States)

    Sabanskis, A.; Virbulis, J.

    2018-05-01

    Mathematical modelling is employed to numerically analyse the dynamics of the Czochralski (CZ) silicon single crystal growth. The model is axisymmetric, its thermal part describes heat transfer by conduction and thermal radiation, and allows to predict the time-dependent shape of the crystal-melt interface. Besides the thermal field, the point defect dynamics is modelled using the finite element method. The considered process consists of cone growth and cylindrical phases, including a short period of a reduced crystal pull rate, and a power jump to avoid large diameter changes. The influence of the thermal stresses on the point defects is also investigated.

  19. Thermal de-isolation of silicon microstructures in a plasma etching environment

    International Nuclear Information System (INIS)

    Lee, Yong-Seok; Jang, Yun-Ho; Kim, Yong-Kweon; Kim, Jung-Mu

    2013-01-01

    This paper presents a theoretical and experimental strategy for thermal de-isolation of silicon microstructures during a plasma etching process. Heat sinking blocks and thin metal layers are implemented around a thermally isolated mass to avoid severe spring width losses by a steep temperature rise. Thermal de-isolation significantly reduces the fabrication errors from −51.0% to −9.0% and from −39.5% to −6.7% for spring widths and resonant frequencies, respectively. Thermal de-isolation also reduces the standard deviation of resonant frequencies from 8.7% to 1.5% across a wafer, which clearly demonstrates the proposed method. (paper)

  20. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Youngseok Lee

    2012-01-01

    Full Text Available It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0 which improves the efficiency of HIT solar cell. The ultrathin thermal passivation silicon oxide (SiO2 layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes. The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time. The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2 flow rate of 3 Lpm. A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness. This ultrathin SiO2 layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i layer and the passivation and tunneling effects of the silicon oxide layer were exploited. The photocurrent was decreased with the increase of illumination intensity and SiO2 thickness.

  1. Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

    Science.gov (United States)

    Wang, Chenlei

    The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to

  2. Micro-cutting of silicon implanted with hydrogen and post-implantation thermal treatment

    Science.gov (United States)

    Jelenković, Emil V.; To, Suet; Sundaravel, B.; Xiao, Gaobo; Huang, Hu

    2016-07-01

    It was reported that non-amorphizing implantation by hydrogen has a potential in improving silicon machining. Post-implantation high-temperature treatment will affect implantation-induced damage, which can have impact on silicon machining. In this article, a relation of a thermal annealing of hydrogen implanted in silicon to micro-cutting experiment is investigated. Hydrogen ions were implanted into 4″ silicon wafers with 175 keV, 150 keV, 125 keV and doses of 2 × 1016 cm-2, 2 × 1016 cm-2 and 3 × 1016 cm-2, respectively. In this way, low hydrogen atom-low defect concentration was created in the region less than ~0.8 μm deep and high hydrogen atom-high defect concentration was obtained at silicon depth of ~0.8-1.5 μm. The post-implantation annealing was carried out at 300 and 400 °C in nitrogen for 1 h. Physical and electrical properties of implanted and annealed samples were characterized by secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD), Rutherford backscattering (RBS) and nanoindentation. Plunge cutting experiment was carried out in and silicon crystal direction. The critical depth of cut and cutting force were monitored and found to be influenced by the annealing. The limits of hydrogen implantation annealing contribution to the cutting characteristics of silicon are discussed in light of implantation process and redistribution of hydrogen and defects generation during annealing process.

  3. Comparison of silicon pin diode detector fabrication processes using ion implantation and thermal doping

    International Nuclear Information System (INIS)

    Zhou, C.Z.; Warburton, W.K.

    1996-01-01

    Two processes for the fabrication of silicon p-i-n diode radiation detectors are described and compared. Both processes are compatible with conventional integrated-circuit fabrication techniques and yield very low leakage currents. Devices made from the process using boron thermal doping have about a factor of 2 lower leakage current than those using boron ion implantation. However, the boron thermal doping process requires additional process steps to remove boron skins. (orig.)

  4. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

    OpenAIRE

    Lee, Youngseok; Oh, Woongkyo; Dao, Vinh Ai; Hussain, Shahzada Qamar; Yi, Junsin

    2012-01-01

    It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT) solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO) process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0) which improves the efficie...

  5. The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2012-01-01

    Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

  6. Modulation of thermal conductivity in kinked silicon nanowires: phonon interchanging and pinching effects.

    Science.gov (United States)

    Jiang, Jin-Wu; Yang, Nuo; Wang, Bing-Shen; Rabczuk, Timon

    2013-04-10

    We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at room temperature. The temperature dependence of the reduction is also calculated. By calculating phonon polarization vectors, two mechanisms are found to be responsible for the reduced thermal conductivity: (1) the interchanging effect between the longitudinal and transverse phonon modes and (2) the pinching effect, that is, a new type of localization, for the twisting and transverse phonon modes in the kinked silicon nanowires. Our work demonstrates that the phonon interchanging and pinching effects, induced by kinking, are brand-new and effective ways in modulating heat transfer in nanowires, which enables the kinked silicon nanowires to be a promising candidate for thermoelectric materials.

  7. Analysis of equations of state and temperature dependence of thermal expansivity and bulk modulus for silicon

    International Nuclear Information System (INIS)

    Pandya, Tushar C; Bhatt, Apoorva D; Thakar, Nilesh A

    2012-01-01

    In the present paper an attempt has been made for the comparative study of different equations of state for silicon (Phase-1, cubic diamond structure) in the pressure range of 0-11 GPa. We compare the results of different equations of state (EOS) with available experimental data. The Kwon and Kim EOS is found to give far better agreement with the available experimental data. Results obtained by Poirier-Tarantola, Vinet, Tait and Suzuki's equations of state are not giving satisfactory agreement with the available experimental data. In the present study simple methods based on thermodynamic functions are presented to investigate the temperature dependence of thermal expansivity and bulk modulus for silicon. The results are reported for silicon. The calculated values of thermal expansivity are in good agreement with experimental data.

  8. A parylene-filled-trench technique for thermal isolation in silicon-based microdevices

    International Nuclear Information System (INIS)

    Lei Yinhua; Wang Wei; Li Ting; Jin Yufeng; Zhang Haixia; Li Zhihong; Yu Huaiqiang; Luo Yingcun

    2009-01-01

    Microdevices prepared in a silicon substrate have been widely used in versatile fields due to the matured silicon-based microfabrication technique and the excellent physical properties of silicon material. However, the high thermal conductivity of silicon restricts its application in most thermal microdevices, especially devices comprising different temperature zones. In this work, a parylene-filled-trench technique was optimized to realize high-quality thermal isolation in silicon-based microdevices. Parylene C, a heat transfer barricading material, was deposited on parallel high-aspect-ratio trenches, which surrounded the isolated target zones. After removing the remnant silicon beneath the trenches by deep reactive ion etching from the back side, a high-quality heat transfer barrier was obtained. By using narrow trenches, only 5 µm thick parylene was required for a complete filling, which facilitated multi-layer interconnection thereafter. The parylene filling performance inside the high-aspect-ratio trench was optimized by two approaches: multiple etch–deposition cycling and trench profile controlling. A 4 × 6 array, in which each unit was kept at a constant temperature and was well thermally isolated individually, was achieved on a silicon substrate by using the present parylene-filled-trench technique. The preliminary experimental results indicated that the present parylene-filled-trench structure exhibited excellent thermal isolation performance, with a very low power requirement of 0.134 mW (K mm 2 ) −1 for heating the isolated silicon unit and a high thermal isolation efficiency of 72.5% between two adjacent units. Accompanied with high-quality isolation performance, the microdevices embedded the present parylene-filled-trench structure to retain a strong mechanical connection larger than 400 kPa between two isolated zones, which is very important for a high-reliability-required micro-electro-mechanical-system (MEMS) device. Considering its room

  9. Effect of Liquid Phase Content on Thermal Conductivity of Hot-Pressed Silicon Carbide Ceramics

    International Nuclear Information System (INIS)

    Lim, Kwang-Young; Jang, Hun; Lee, Seung-Jae; Kim, Young-Wook

    2015-01-01

    Silicon carbide (SiC) is a promising material for Particle-Based Accident Tolerant (PBAT) fuel, fission, and fusion power applications due to its superior physical and thermal properties such as low specific mass, low neutron cross section, excellent radiation stability, low coefficient of thermal expansion, and high thermal conductivity. Thermal conductivity of PBAT fuel is one of very important factors for plant safety and energy efficiency of nuclear reactors. In the present work, the effect of Y 2 O 3 -Sc 2 O 3 content on the microstructure and thermal properties of the hot pressed SiC ceramics have been investigated. Suppressing the β to α phase transformation of SiC ceramics is beneficial in increasing the thermal conductivity of liquid-phase sintered SiC ceramics. Developed SiC ceramics with Y 2 O 3 -Sc 2 O 3 additives are very useful for thermal conductivity on matrix material of the PBAT fuel

  10. Thermal shock behaviour of mullite-bonded porous silicon carbide ceramics with yttria addition

    International Nuclear Information System (INIS)

    Ding Shuqiang; Zeng Yuping; Jiang Dongliang

    2007-01-01

    Thermal shock resistance of mullite (3Al 2 O 3 · 2SiO 2 )-bonded porous silicon carbide (SiC) ceramics with 3.0 wt% yttria (Y 2 O 3 ) addition was evaluated by a water-quenching technique. The thermal shock damage was investigated as a function of the quenching temperature, quenching cycles and specimen thickness. The residual flexural strength of the quenched specimens decreases with increasing quenching temperature and specimen thickness due to the larger thermal stress caused by thermal shock. However, quenching cycles at the temperature difference of 1200 deg. C have no effect on the residual strength since the same thermal stress was produced in repeated thermal shock processes. The good thermal shock damage resistance of the specimens is contributed mainly by the low strength and moderate elastic modulus. Moreover, the pores prevent the continuous propagation of cracks and alleviate further damage

  11. Improved silicon surface passivation of APCVD Al2O3 by rapid thermal annealing

    NARCIS (Netherlands)

    Black, L.E.; Allen, T.; McIntosh, K.R.; Cuévas, A.

    2016-01-01

    Short-duration post-deposition thermal treatments at temperatures above those normally used for annealing activation have the potential to further improve the already excellent passivation of crystalline silicon (c-Si) achieved by Al2O3, but have so far received little attention. In this work we

  12. Low-Power Silicon-based Thermal Sensors and Actuators for Chemical Applications

    NARCIS (Netherlands)

    Vereshchagina, E.

    2011-01-01

    In the Hot Silicon project low and ultra-low-power Si-based hot surface devices have been developed, i.e. thermal sensors and actuators, for application in catalytic gas micro sensors, micro- and nano- calorimeters. This work include several scientific and technological aspects: • Design and

  13. All-silicon thermal independent Mach-Zehnder interferometer with multimode waveguides

    DEFF Research Database (Denmark)

    Guan, Xiaowei; Frandsen, Lars Hagedorn

    2016-01-01

    A novel all-silicon thermal independent Mach-Zehnder interferometer consisting of two multimode waveguide arms having equal lengths and widths but transmitting different modes is proposed and experimentally demonstrated. The interferometer has a temperature sensitivity smaller than 8pm/°C in a wa...

  14. The effects of thermal annealing in structural and optical properties of RF sputtered amorphous silicon

    International Nuclear Information System (INIS)

    Abdul Fatah Awang Mat

    1988-01-01

    The effect of thermal annealing on structural and optical properties of amorphous silicon are studied on samples prepared by radio-frequency sputtering. The fundamental absorption edge of these films are investigated at room temperature and their respective parameters estimated. Annealing effect on optical properties is interpreted in terms of the removal of voids and a decrease of disorder. (author)

  15. Electrically active, doped monocrystalline silicon nanoparticles produced by hot wire thermal catalytic pyrolysis

    CSIR Research Space (South Africa)

    Scriba, MR

    2011-05-01

    Full Text Available Doped silicon nanoparticles have successfully been produced by hot wire thermal catalytic pyrolysis at 40 mbar and a filament temperature of 1800 °C, using a mixture of silane and diborane or phosphine. All particles are monocrystalline with shapes...

  16. An attempt to specify thermal history in CZ silicon wafers and possibilities for its modification

    International Nuclear Information System (INIS)

    Kissinger, G.; Sattler, A.; Mueller, T.; Ammon, W. von

    2007-01-01

    The term thermal history of silicon wafers represents the whole variety of process parameters of crystal growth. The aim of this contribution is an attempt to specify thermal history by one parameter that is directly correlated to the bulk microdefect density. The parameter that reflects thermal history and correlates it with nucleation of oxide precipitates is the concentration of VO 2 complexes. The VO 2 concentration in silicon wafers is too low to be measured by FTIR but it can be obtained from the loss of interstitial oxygen during a standardized thermal treatment. Based on this, the vacancy concentration frozen during crystal cooling in the ingot can be calculated. RTA treatments above 1150 deg. C create a well defined level of the VO 2 concentration in silicon wafers. This means that a well controlled modification of the thermal history is possible. We also investigated the kinetics of reduction of the as-grown excess VO 2 concentration during RTA treatments at 950 deg. C and 1050 deg. C and the effectiveness of this attempt to totally delete the thermal history

  17. Influence of germanium on thermal dewetting and agglomeration of the silicon template layer in thin silicon-on-insulator

    International Nuclear Information System (INIS)

    Zhang, P P; Yang, B; Rugheimer, P P; Roberts, M M; Savage, D E; Lagally, M G; Liu Feng

    2009-01-01

    We investigate the influence of heteroepitaxially grown Ge on the thermal dewetting and agglomeration of the Si(0 0 1) template layer in ultrathin silicon-on-insulator (SOI). We show that increasing Ge coverage gradually destroys the long-range ordering of 3D nanocrystals along the (1 3 0) directions and the 3D nanocrystal shape anisotropy that are observed in the dewetting and agglomeration of pure SOI(0 0 1). The results are qualitatively explained by Ge-induced bond weakening and decreased surface energy anisotropy. Ge lowers the dewetting and agglomeration temperature to as low as 700 0 C.

  18. Forming of nanocrystal silicon films by implantation of high dose of H+ in layers of silicon on isolator and following fast thermal annealing

    International Nuclear Information System (INIS)

    Tyschenko, I.E.; Popov, V.P.; Talochkin, A.B.; Gutakovskij, A.K.; Zhuravlev, K.S.

    2004-01-01

    Formation of nanocrystalline silicon films during rapid thermal annealing of the high-dose H + ion implanted silicon-on-insulator structures was studied. It was found, that Si nanocrystals had formed alter annealings at 300-400 deg C, their formation being strongly limited by the hydrogen content in silicon and also by the annealing time. It was supposed that the nucleation of crystalline phase occurred inside the silicon islands between micropores. It is conditioned by ordering Si-Si bonds as hydrogen atoms are leaving their sites in silicon network. No coalescence of micropores takes place during the rapid thermal annealing at the temperatures up to ∼ 900 deg C. Green-orange photoluminescence was observed on synthesized films at room temperature [ru

  19. Study of the thermal effect on silicon surface induced by ion beam from plasma focus device

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Z., E-mail: pscientific5@aec.org.sy [Scientific Service Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Ahmad, M. [IBA Laboratory, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Chemistry Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Al-Hawat, Sh.; Akel, M. [Physics Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic)

    2017-04-01

    Structural modifications in form of ripples and cracks are induced by nitrogen ions from plasma focus on silicon surface. The investigation of such structures reveals correlation between ripples and cracks formation in peripheral region of the melt spot. The reason of such correlation and structure formation is explained as result of thermal effect. Melting and resolidification of the center of irradiated area occur within one micro second of time. This is supported by a numerical simulation used to investigate the thermal effect induced by the plasma focus ion beams on the silicon surface. This simulation provides information about the temperature profile as well as the dynamic of the thermal propagation in depth and lateral directions. In accordance with the experimental observations, that ripples are formed in latter stage after the arrival of last ion, the simulation shows that the thermal relaxation takes place in few microseconds after the end of the ion beam arrival. Additionally, the dependency of thermal propagation and relaxation on the distance of the silicon surface from the anode is presented.

  20. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  1. Amorphous Silicon-Germanium Films with Embedded Nano crystals for Thermal Detectors with Very High Sensitivity

    International Nuclear Information System (INIS)

    Calleja, C.; Torres, A.; Rosales-Quintero, P.; Moreno, M.

    2016-01-01

    We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nano crystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity in thermal detectors (micro bolometers). Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9%K -1 ). Our results show that amorphous silicon-germanium films with embedded nano crystals can be used as thermo sensitive films in high performance infrared focal plane arrays (IRFPAs) used in commercial thermal cameras.

  2. Thermal conductivity engineering in width-modulated silicon nanowires and thermoelectric efficiency enhancement

    Science.gov (United States)

    Zianni, Xanthippi

    2018-03-01

    Width-modulated nanowires have been proposed as efficient thermoelectric materials. Here, the electron and phonon transport properties and the thermoelectric efficiency are discussed for dimensions above the quantum confinement regime. The thermal conductivity decreases dramatically in the presence of thin constrictions due to their ballistic thermal resistance. It shows a scaling behavior upon the width-modulation rate that allows for thermal conductivity engineering. The electron conductivity also decreases due to enhanced boundary scattering by the constrictions. The effect of boundary scattering is weaker for electrons than for phonons and the overall thermoelectric efficiency is enhanced. A ZT enhancement by a factor of 20-30 is predicted for width-modulated nanowires compared to bulk silicon. Our findings indicate that width-modulated nanostructures are promising for developing silicon nanostructures with high thermoelectric efficiency.

  3. Linear thermal expansion measurements on silicon from 6 to 340 K

    International Nuclear Information System (INIS)

    Lyon, K.G.; Salinger, G.L.; Swenson, C.A.; White, G.K.

    1977-01-01

    Linear thermal expansion measurements have been carried out from 6 to 340 K on a high-purity silicon sample using a linear absolute capacitance dilatometer. The accuracy of the measurements varies from +- 0.01 x 10 -8 K -1 at the lowest temperatures to +- 0.1 x 10 -8 K -1 or 0.1%, whichever is greater, near room temperature, and is sufficient to establish silicon as a thermal expansion standard for these temperatures. The agreement with previous data is satisfactory at low temperatures and excellent above room temperature where laser-interferometry data of comparable accuracy exist. Thermal expansions calculated from ultrasonic and heat-capacity data are preferred below 13 K where experimental problems occurred

  4. Thermal and thermomechanical effects on the Al-Ca-Zn superplastic alloy studied on the positrons annihilation

    International Nuclear Information System (INIS)

    Romero, R.; Somoza, A.; Silvetti, S.P.

    1990-01-01

    Superplastic metallic materials are characterized by the presence of an unusual plastic behaviour, within a certain temperature range, with high ductility and low flow stress. This makes them suitable for their shaping with compressed air, for instance. On the other hand they behave similarly to any other metallic alloy at room temperature. One of the main problems found in superplastic alloys during deformation is the formation of cavities that may deteriorate the properties of a piece which was manufactured with this method. As an attempt to understand the origin of the cavitation, the effect of thermal and thermo-mechanical treatments was studied on superplastic alloy Al-5%wtCa-5%wtZn using a measurement technique based on positron annihilation. (Author). 3 refs., 5 figs

  5. Free volume study on the miscibility of PEEK/PEI blend using positron annihilation and dynamic mechanical thermal analysis

    International Nuclear Information System (INIS)

    Ramani, R; Alam, S

    2015-01-01

    High performance polymer blend of poly(ether ether ketone) (PEEK) and poly(ether imide) (PEI) was examined for their free volume behaviour using positron annihilation lifetime spectroscopy and dynamic mechanical thermal analysis methods. The fractional free volume obtained from PALS shows a negative deviation from linear additivity rule implying good miscibility between PEEK and PEI. The dynamic modulus and loss tangent were obtained for the blends at three different frequencies 1, 10 and 100 Hz at temperatures close to and above their glass transition temperature. Applying Time-Temperature-Superposition (TTS) principle to the DMTA results, master curves were obtained at a reference temperature T o and the WLF coefficients c 0 1 and c 0 2 were evaluated. Both the methods give similar results for the dependence of fractional free volume on PEI content in this blend. The results reveal that free volume plays an important role in determining the visco-elastic properties in miscible polymer blends. (paper)

  6. Improved the Surface Roughness of Silicon Nanophotonic Devices by Thermal Oxidation Method

    Energy Technology Data Exchange (ETDEWEB)

    Shi Zujun; Shao Shiqian; Wang Yi, E-mail: ywangwnlo@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, No. 1037, Luoyu Street, Wuhan 430074 (China)

    2011-02-01

    The transmission loss of the silicon-on-insulator (SOI) waveguide and the coupling loss of the SOI grating are determined to a large extent by the surface roughness. In order to obtain smaller loss, thermal oxidation is a good choice to reduce the surface roughness of the SOI waveguide and grating. Before the thermal oxidation, the root mean square of the surface roughness is over 11 nm. After the thermal oxidation, the SEM figure shows that the bottom of the grating is as smooth as quartz surface, while the AFM shows that the root mean square of the surface is less than 5 nm.

  7. Two orders of magnitude reduction in silicon membrane thermal conductivity by resonance hybridizations

    Science.gov (United States)

    Honarvar, Hossein; Hussein, Mahmoud I.

    2018-05-01

    The thermal conductivity of a freestanding single-crystal silicon membrane may be reduced significantly by attaching nanoscale pillars on one or both surfaces. Atomic resonances of the nanopillars form vibrons that intrinsically couple with the base membrane phonons causing mode hybridization and flattening at each coupling location in the phonon band structure. This in turn causes group velocity reductions of existing phonons, in addition to introducing new modes that get excited but are localized and do not transport energy. The nanopillars also reduce the phonon lifetimes at and around the hybridization zones. These three effects, which in principle may be tuned to take place across silicon's full spectrum, lead to a lowering of the in-plane thermal conductivity in the base membrane. Using equilibrium molecular dynamics simulations, and utilizing the concept of vibrons compensation, we report a staggering two orders of magnitude reduction in the thermal conductivity at room temperature by this mechanism. Specifically, a reduction of a factor of 130 is demonstrated for a roughly 10-nm-thick pillared membrane compared to a corresponding unpillared membrane. This amounts to a record reduction of a factor of 481 compared to bulk crystalline silicon and nearly a factor of 2 compared to bulk amorphous silicon. These results are obtained while providing a path for preserving performance with upscaling.

  8. Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication

    International Nuclear Information System (INIS)

    Lee, W.C.T.; Bishop, N.; Thompson, D.L.; Xue, K.; Scappucci, G.; Cederberg, J.G.; Gray, J.K.; Han, S.M.; Celler, G.K.; Carroll, M.S.; Simmons, M.Y.

    2013-01-01

    Highlights: ► Strained silicon-on-insulator (sSOI) samples were flash-annealed at high temperature under ultra-high vacuum conditions. ► The extend of surface strain relaxation depends on the annealing temperature with no strain relaxation observed below 1020 °C. ► A 2 × 1 reconstructed surface with low defect density can be achieved. ► The annealed sSOI surface shows enhanced step undulations due to the unique energetics caused by surface strain. - Abstract: We investigate the ability to reconstruct strained silicon-on-insulator (sSOI) substrates in ultra-high vacuum for use in atomic scale device fabrication. Characterisation of the starting sSOI substrate using μRaman shows an average tensile strain of 0.8%, with clear strain modulation in a crosshatch pattern across the surface. The surfaces were heated in ultra-high vacuum from temperatures of 900 °C to 1100 °C and subsequently imaged using scanning tunnelling microscopy (STM). The initial strain modulation on the surface is observed to promote silicon migration and the formation of crosshatched surface features whose height and pitch increases with increasing annealing temperature. STM images reveal alternating narrow straight S A steps and triangular wavy S B steps attributed to the spontaneous faceting of S B and preferential adatom attachment on S B under biaxial tensile strain. Raman spectroscopy shows that despite these high temperature anneals no strain relaxation of the substrate is observed up to temperatures of 1020 °C. Above 1100 °C, strain relaxation is evident but is confined to the surface.

  9. The use of large area silicon sensors for thermal neutron detection

    International Nuclear Information System (INIS)

    Schulte, R.L.; Swanson, F.; Kesselman, M.

    1994-01-01

    The use of large area planar silicon detectors coupled with gadolinium foils has been investigated to develop a thermal neutron detector having a large area-efficiency (Aε) product. Noise levels due to high detector capacitance limit the size of silicon detectors that can be utilized. Calculations using the Monte Carlo code, MCNP, have been made to determine the variation of intrinsic detection efficiency as a function of the discriminator threshold level required to eliminate the detector noise. Measurements of the noise levels for planar silicon detectors of various resistivities (400, 3000 and 5000 Ω cm) have been made and the optimal detector area-efficiency products have been determined. The response of a Si-Gd-Si sandwich detector with areas between 1 cm 2 and 10.5 cm 2 is presented and the effects of the detector capacitance and reverse current are discussed. ((orig.))

  10. The use of large area silicon sensors for thermal neutron detection

    Energy Technology Data Exchange (ETDEWEB)

    Schulte, R.L. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States)); Swanson, F. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States)); Kesselman, M. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States))

    1994-12-30

    The use of large area planar silicon detectors coupled with gadolinium foils has been investigated to develop a thermal neutron detector having a large area-efficiency (A[epsilon]) product. Noise levels due to high detector capacitance limit the size of silicon detectors that can be utilized. Calculations using the Monte Carlo code, MCNP, have been made to determine the variation of intrinsic detection efficiency as a function of the discriminator threshold level required to eliminate the detector noise. Measurements of the noise levels for planar silicon detectors of various resistivities (400, 3000 and 5000 [Omega] cm) have been made and the optimal detector area-efficiency products have been determined. The response of a Si-Gd-Si sandwich detector with areas between 1 cm[sup 2] and 10.5 cm[sup 2] is presented and the effects of the detector capacitance and reverse current are discussed. ((orig.))

  11. Interaction of alpha radiation with thermally-induced defects in silicon

    International Nuclear Information System (INIS)

    Ali, Akbar; Majid, Abdul

    2008-01-01

    The interaction of radiation-induced defects created by energetic alpha particles and thermally-induced defects in silicon has been studied using a Deep Level Transient Spectroscopy (DLTS) technique. Two thermally-induced defects at energy positions E c -0.48 eV and E c -0.25 eV and three radiation-induced defects E2, E3 and E5 have been observed. The concentration of both of the thermally-induced defects has been observed to increase on irradiation. It has been noted that production rates of the radiation-induced defects are suppressed in the presence of thermally-induced defects. A significant difference in annealing characteristics of thermally-induced defects in the presence of radiation-induced defects has been observed compared to the characteristics measured in pre-irradiated samples

  12. Thermal processing and native oxidation of silicon nanoparticles

    International Nuclear Information System (INIS)

    Winters, Brandon J.; Holm, Jason; Roberts, Jeffrey T.

    2011-01-01

    In this study, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and electron energy loss spectroscopy (EELS) were used to investigate in-air oxidation of silicon nanoparticles ca. 11 nm in diameter. Particle samples were prepared first by extracting them from an RF plasma synthesis reactor, and then heating them in an inert carrier gas stream. The resulting particles had varying surface hydrogen coverages and relative amounts of SiH x (x = 1, 2, and 3), depending on the temperature to which they had been heated. The particles were allowed to oxidize in-air for several weeks. FTIR, XPS, and EELS analyses that were performed during this period clearly establish that adsorbed hydrogen retards oxidation, although in complex ways. In particular, particles that have been heated to intermediate hydrogen coverages oxidize more slowly in air than do freshly generated particles that have a much higher hydrogen content. In addition, the loss of surface hydride species at high processing temperatures results in fast initial oxidation and the formation of a self-limiting oxide layer. Analogous measurements made on deuterium-covered particles show broadly similar behavior; i.e., that oxidation is the slowest at some intermediate coverage of adsorbed deuterium.

  13. Predicting the performance of amorphous and crystalline silicon based photovoltaic solar thermal collectors

    International Nuclear Information System (INIS)

    Daghigh, Ronak; Ibrahim, Adnan; Jin, Goh Li; Ruslan, Mohd Hafidz; Sopian, Kamaruzzaman

    2011-01-01

    BIPVT is an application where solar PV/T modules are integrated into the building structure. System design parameters such as thermal conductivity and fin efficiency, type of cells, type of coolant and operating conditions are factors which influence the performance of BIPVT. Attempts have been made to improve the efficiency of building-integrated photovoltaic thermal (BIPVT). A new design concept of water-based PVT collector for building-integrated applications has been designed and evaluated. The results of simulation study of amorphous silicon (a-Si) PV/T and crystalline silicon (c-Si) module types are based on the metrological condition of Malaysia for a typical day in March. At a flow rate of 0.02 kg/s, solar radiation level between 700 and 900 W/m 2 and ambient temperature between 22 and 32 o C, the electrical, thermal and combined photovoltaic thermal efficiencies for the PV/T (a-Si) were 4.9%, 72% and 77%, respectively. Moreover, the electrical, thermal and combined photovoltaic thermal efficiencies of the PV/T (c-Si) were 11.6%, 51% and 63%.

  14. Bioconjugate functionalization of thermally carbonized porous silicon using a radical coupling reaction†

    Science.gov (United States)

    Sciacca, Beniamino; Alvarez, Sara D.; Geobaldo, Francesco; Sailor, Michael J.

    2011-01-01

    The high stability of Salonen’s thermally carbonized porous silicon (TCPSi) has attracted attention for environmental and biochemical sensing applications, where corrosion-induced zero point drift of porous silicon-based sensor elements has historically been a significant problem. Prepared by the high temperature reaction of porous silicon with acetylene gas, the stability of this silicon carbide-like material also poses a challenge—many sensor applications require a functionalized surface, and the low reactivity of TCPSi has limited the ability to chemically modify its surface. This work presents a simple reaction to modify the surface of TCPSi with an alkyl carboxylate. The method involves radical coupling of a dicarboxylic acid (sebacic acid) to the TCPSi surface using a benzoyl peroxide initiator. The grafted carboxylic acid species provides a route for bioconjugate chemical modification, demonstrated in this work by coupling propylamine to the surface carboxylic acid group through the intermediacy of pentafluorophenol and 1-ethyl-3-[3-dimethylaminopropyl]carbodiimide hydrochloride (EDC). The stability of the carbonized porous Si surface, both before and after chemical modification, is tested in phosphate buffered saline solution and found to be superior to either hydrosilylated (with undecylenic acid) or thermally oxidized porous Si surfaces. PMID:20967329

  15. Extreme temperature stability of thermally insulating graphene-mesoporous-silicon nanocomposite

    Science.gov (United States)

    Kolhatkar, Gitanjali; Boucherif, Abderraouf; Rahim Boucherif, Abderrahim; Dupuy, Arthur; Fréchette, Luc G.; Arès, Richard; Ruediger, Andreas

    2018-04-01

    We demonstrate the thermal stability and thermal insulation of graphene-mesoporous-silicon nanocomposites (GPSNC). By comparing the morphology of GPSNC carbonized at 650 °C as-formed to that after annealing, we show that this nanocomposite remains stable at temperatures as high as 1050 °C due to the presence of a few monolayers of graphene coating on the pore walls. This does not only make this material compatible with most thermal processes but also suggests applications in harsh high temperature environments. The thermal conductivity of GPSNCs carbonized at temperatures in the 500 °C-800 °C range is determined through Raman spectroscopy measurements. They indicate that the thermal conductivity of the composite is lower than that of silicon, with a value of 13 ± 1 W mK-1 at room temperature, and not affected by the thin graphene layer, suggesting a role of the high concentration of carbon related-defects as indicated by the high intensity of the D-band compared to G-band of the Raman spectra. This morphological stability at high temperature combined with a high thermal insulation make GPSNC a promising candidate for a broad range of applications including microelectromechanical systems and thermal effect microsystems such as flow sensors or IR detectors. Finally, at 120 °C, the thermal conductivity remains equal to that at room temperature, attesting to the potential of using our nanocomposite in devices that operate at high temperatures such as microreactors for distributed chemical conversion, solid oxide fuel cells, thermoelectric devices or thermal micromotors.

  16. Pressure effects on the thermal stability of silicon carbide fibers

    Science.gov (United States)

    Jaskowiak, Martha H.; Dicarlo, James A.

    1989-01-01

    Commercially available polymer derived SiC fibers were treated at temperatures from 1000 to 2200 C in vacuum and argon gas pressure of 1 and 1360 atm. Effects of gas pressure on the thermal stability of the fibers were determined through property comparison between the pressure treated fibers and vacuum treated fibers. Investigation of the thermal stability included studies of the fiber microstructure, weight loss, grain growth, and tensile strength. The 1360 atm argon gas treatment was found to shift the onset of fiber weight loss from 1200 to above 1500 C. Grain growth and tensile strength degradation were correlated with weight loss and were thus also inhibited by high pressure treatments. Additional heat treatment in 1 atm argon of the fibers initially treated at 1360 atm argon caused further weight loss and tensile strength degradation, thus indicating that high pressure inert gas conditions would be effective only in delaying fiber strength degradation. However, if the high gas pressure could be maintained throughout composite fabrication, then the composites could be processed at higher temperatures.

  17. Detection mechanisms in silicon diodes used as α-particle and thermal neutron detectors

    International Nuclear Information System (INIS)

    Cerofolini, G.F.; Ferla, G.; Foglio Para, A.

    1981-01-01

    Some common silicon devices (diodes, RAMs etc.) can be used as α and thermal neutron detectors. An α resolution of approx. equal to 3% can be obtained utilizing p + /n or n + /p diodes with no external bias. Thermal neutrons are detected by means of the reaction 10 B(n,α) 7 Li on the 10 B present in the devices. Neutron efficiency has been substantially improved by implantation of 10 B ions in the p + region of the diodes. Experimental results allow us to clarify the carrier collection mechanisms throughout the device. Some current opinions in the field are contradicted. (orig.)

  18. Three-dimensional modelling of thermal stress in floating zone silicon crystal growth

    Science.gov (United States)

    Plate, Matiss; Krauze, Armands; Virbulis, Jānis

    2018-05-01

    During the growth of large diameter silicon single crystals with the industrial floating zone method, undesirable level of thermal stress in the crystal is easily reached due to the inhomogeneous expansion as the crystal cools down. Shapes of the phase boundaries, temperature field and elastic material properties determine the thermal stress distribution in the solid mono crystalline silicon during cylindrical growth. Excessive stress can lead to fracture, generation of dislocations and altered distribution of intrinsic point defects. Although appearance of ridges on the crystal surface is the decisive factor of a dislocation-free growth, the influence of these ridges on the stress field is not completely clear. Here we present the results of thermal stress analysis for 4” and 5” diameter crystals using a quasi-stationary three dimensional mathematical model including the material anisotropy and the presence of experimentally observed ridges which cannot be addressed with axis-symmetric models. The ridge has a local but relatively strong influence on thermal stress therefore its relation to the origin of fracture is hypothesized. In addition, thermal stresses at the crystal rim are found to increase for a particular position of the crystal radiation reflector.

  19. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    Energy Technology Data Exchange (ETDEWEB)

    Menges, F.; Spieser, M.; Riel, H.; Gotsmann, B., E-mail: bgo@zurich.ibm.com [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Dittberner, M. [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Novotny, L. [Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Passarello, D.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)

    2016-04-25

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  20. Tuning the thermal conductivity of silicon carbide by twin boundary: a molecular dynamics study

    International Nuclear Information System (INIS)

    Liu, Qunfeng; Wang, Liang; Shen, Shengping; Luo, Hao

    2017-01-01

    Silicon carbide (SiC) is a semiconductor with excellent mechanical and physical properties. We study the thermal transport in SiC by using non-equilibrium molecular dynamics simulations. The work is focused on the effects of twin boundaries and temperature on the thermal conductivity of 3C-SiC. We find that compared to perfect SiC, twinned SiC has a markedly reduced thermal conductivity when the twin boundary spacing is less than 100 nm. The Si–Si twin boundary is more effective to phonon scattering than the C–C twin boundary. We also find that the phonon scattering effect of twin boundary decreases with increasing temperature. Our findings provide insights into the thermal management of SiC-based electronic devices and thermoelectric applications. (paper)

  1. Field induced decrystallization of silicon: Evidence of a microwave non-thermal effect

    Science.gov (United States)

    Nozariasbmarz, Amin; Dsouza, Kelvin; Vashaee, Daryoosh

    2018-02-01

    It is rather strange and not fully understood that some materials decrystallize when exposed to microwave radiation, and it is still debatable if such a transformation is a thermal or non-thermal effect. We hereby report experimental evidences that weight the latter effect. First, a single crystal silicon wafer exposed to microwaves showed strong decrystallization at high temperature. Second, when some areas of the wafer were masked with metal coating, only the exposed areas underwent decrystallization. Transmission electron microscopy analysis, x-ray diffraction data, and thermal conductivity measurements all indicated strong decrystallization, which occurred in the bulk of the material and was not a surface effect. These observations favor the existence of a non-thermal microwave effect.

  2. Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

    Directory of Open Access Journals (Sweden)

    Zaoyang Li

    2016-01-01

    Full Text Available We carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat transfer and silicon crystal growth. It is found that the crucible plays an important role in heat transfer, and therefore its thermal conductivity can influence the crystal growth significantly in the entire DS process. Increasing the crucible thermal conductivity can shorten the time for melting of silicon feedstock and growing of silicon crystal significantly, and therefore large thermal conductivity is helpful in saving both production time and power energy. However, the high temperature gradient in the silicon ingots and the locally concave melt-crystal interface shape for large crucible thermal conductivity indicate that high thermal stress and dislocation propagation are likely to occur during both growing and annealing stages. Based on the numerical simulations, some discussions on designing and choosing the crucible thermal conductivity are presented.

  3. ANSYS program and re-validation of the thermal analysis of the Cornell silicon crystal

    International Nuclear Information System (INIS)

    Khounsary, A.; Kuzay, T.

    1992-01-01

    Thermal analysis of the Cornell three-channel silicon crystal is carried out using the ANSYS finite element program. Results are in general agreement with those previously obtained using the Transient Heat Transfer, version B (THTB) program. The main thrust of the present study has been to (a) explore the thermal analysis potentials of the ANSYS program in solving thermal hydraulic problems in the APS beamline design, (b) compare the ANSYS results with those obtained by THTB for a specific test crystal, and (c) obtain some cost benchmarks for the ANSYS program. On the basis of a limited number of test runs for the silicon crystal problem, conclusions can be drawn that (a) except for conduction problems with simple boundary conditions the utility of ANSYS for solving a variety of three-dimensional thermal hydraulic problems is at best limited, (b) in comparison with THTB program, ANSYS requires a more detailed modeling (with increasing computation time) for comparably accurate results, and (c) no firm statement regarding the cost factor can be made at this time although the ANSYS program appears to be more expensive than any other code we have used so far

  4. Thermal Stress Analyses for a Multislug Beam NLC Positron Target(LCC-0090)

    International Nuclear Information System (INIS)

    Stein, W.

    2003-01-01

    The power deposition of an incident multislug electron beam in a tungsten-rhenium target and the resultant thermal shock stresses in the material have been modeled with a transient, dynamic, structural response finite element code. The Next Linear Collider electron beam is assumed split into two parts, with each part impinging on a 4 radiation lengths thick target. Two targets are required to avoid excessive thermal stresses in the targets. Each of the two beam parts is assumed broken up into four slugs, each two microseconds apart. Energy deposition from each slug occurs over 265 nanoseconds and results in heating of the target and pressure pulses straining the material. The rapid power deposition of the electron beam and the resultant temperature profile in the target generates stress and pressure waves in the material that are considerably larger than those calculated by a static analysis. The 6.22 GeV electron beam has a spot radius size of 1.6 mm and results in a maximum temperature jump of 438 C. Stress pressure pulses are induced in the material from the rapid thermal expansion of the hotter material with peak effective stresses reaching 78 ksi (5.3 x 10 8 Pa) on the back side of the target, which is less than one half of the yield strength of the tungsten/rhenium alloy and below the material fatigue limit

  5. Thermal Stress Analyses for an NLC Positron Target with a 3 mm Spot Radius Beam

    International Nuclear Information System (INIS)

    Stein, W.; Sunwoo, A.; Sheppard, J. C.; Bharadwaj, V.; Schultz, D.

    2002-01-01

    The power deposition of an incident electron beam in a tungsten-rhenium target and the resultant thermal shock stresses in the material have been modeled with a transient, dynamic, structural response finite element code. The Next Linear Collider electron beam is assumed split into three parts, with each part impinging on a 4 radiation lengths thick target. Three targets are required to avoid excessive thermal stresses in the targets. Energy deposition from each beam pulse occurs over 265 nanoseconds and results in heating of the target and pressure pulses straining the material. The rapid power deposition of the electron beam and the resultant temperature profile in the target generates stress and pressure waves in the material that are considerably larger than those calculated by a static analysis. The 6.22 GeV electron beam has a spot radius size of 3 mm and results in a maximum temperature jump of 147 C. Stress pressure pulses are induced in the material from the rapid thermal expansion of the hotter material with peak effective stresses reaching 83 ksi (5.77 x 10 8 Pa) on the back side of the target, which is less than one half of the yield strength of the tungsten/rhenium alloy and below the material fatigue limit

  6. Inkjet 3D printing of UV and thermal cure silicone elastomers for dielectric elastomer actuators

    Science.gov (United States)

    McCoul, David; Rosset, Samuel; Schlatter, Samuel; Shea, Herbert

    2017-12-01

    Dielectric elastomer actuators (DEAs) are an attractive form of electromechanical transducer, possessing high energy densities, an efficient design, mechanical compliance, high speed, and noiseless operation. They have been incorporated into a wide variety of devices, such as microfluidic systems, cell bioreactors, tunable optics, haptic displays, and actuators for soft robotics. Fabrication of DEA devices is complex, and the majority are inefficiently made by hand. 3D printing offers an automated and flexible manufacturing alternative that can fabricate complex, multi-material, integrated devices consistently and in high resolution. We present a novel additive manufacturing approach to DEA devices in which five commercially available, thermal and UV-cure DEA silicone rubber materials have been 3D printed with a drop-on-demand, piezoelectric inkjet system. Using this process, 3D structures and high-quality silicone dielectric elastomer membranes as thin as 2 μm have been printed that exhibit mechanical and actuation performance at least as good as conventionally blade-cast membranes. Printed silicone membranes exhibited maximum tensile strains of up to 727%, and DEAs with printed silicone dielectrics were actuated up to 6.1% area strain at a breakdown strength of 84 V μm-1 and also up to 130 V μm-1 at 2.4% strain. This approach holds great potential to manufacture reliable, high-performance DEA devices with high throughput.

  7. High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Shekari, L., E-mail: lsg09_phy089@student.usm.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Ramizy, A.; Omar, K.; Hassan, H. Abu; Hassan, Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer A new kind of substrate (porous silicon) was used. Black-Right-Pointing-Pointer Also this research introduces an easy and safe method to grow high quality GaN NWs. Black-Right-Pointing-Pointer This is a new growth process to decrease the cost, complexity of growth of GaN NWs. Black-Right-Pointing-Pointer It is a controllable method to synthesize GaN NWs by thermal evaporation. - Abstract: Nanowires (NWs) of GaN thin films were prepared on as-grown Si (1 1 1) and porous silicon (PS) substrates using thermal evaporation method. The film growth produced high-quality wurtzite GaN NWs. The size, morphology, and nanostructures of the crystals were investigated through scanning electron microscopy, high-resolution X-ray diffraction and photoluminescence spectroscopy. The NWs grown on porous silicon were thinner, longer and denser compared with those on as-grown Si. The energy band gap of the NWs grown on PS was larger than that of NWs on as-grown Si. This is due to the greater quantum confinement effects of the crystalline structure of the NWs grown on PS.

  8. Micro-fabricated silicon devices for advanced thermal management and integration of particle tracking detectors

    CERN Document Server

    Romagnoli, Giulia; Gambaro, Carla

    Since their first studies targeting the cooling of high-power computing chips, micro-channel devices are proven to provide a very efficient cooling system. In the last years micro-channel cooling has been successfully applied to the cooling of particle detectors at CERN. Thanks to their high thermal efficiency, they can guarantee a good heat sink for the cooling of silicon trackers, fundamental for the reduction of the radiation damage caused by the beam interactions. The radiation damage on the silicon detector is increasing with temperature and furthermore the detectors are producing heat that should be dissipated in the supporting structure. Micro-channels guarantee a distributed and uniform thermal exchange, thanks to the high flexibility of the micro-fabrication process that allows a large variety of channel designs. The thin nature of the micro-channels etched inside silicon wafers, is fulfilling the physics requirement of minimization of the material crossed by the particle beam. Furthermore micro-chan...

  9. Time-Based Readout of a Silicon Photomultiplier (SiPM) for Time of Flight Positron Emission Tomography (TOF-PET)

    CERN Document Server

    Powolny, F; Brunner, S E; Hillemanns, H; Meyer, T; Garutti, E; Williams, M C S; Auffray, E; Shen, W; Goettlich, M; Jarron, P; Schultz-Coulon, H C

    2011-01-01

    Time of flight (TOF) measurements in positron emission tomography (PET) are very challenging in terms of timing performance, and should ideally achieve less than 100 ps FWHM precision. We present a time-based differential technique to read out silicon photomultipliers (SiPMs) which has less than 20 ps FWHM electronic jitter. The novel readout is a fast front end circuit (NINO) based on a first stage differential current mode amplifier with 20 Omega input resistance. Therefore the amplifier inputs are connected differentially to the SiPM's anode and cathode ports. The leading edge of the output signal provides the time information, while the trailing edge provides the energy information. Based on a Monte Carlo photon-generation model, HSPICE simulations were run with a 3 x 3 mm(2) SiPM-model, read out with a differential current amplifier. The results of these simulations are presented here and compared with experimental data obtained with a 3 x 3 x 15 mm(3) LSO crystal coupled to a SiPM. The measured time coi...

  10. A study of phonon anisotropic scattering effect on silicon thermal conductivity at nanoscale

    Energy Technology Data Exchange (ETDEWEB)

    Bong, Victor N-S; Wong, Basil T. [Swinburne Sarawak Research Centre for Sustainable Technologies, Faculty of Engineering, Computing & Science, Swinburne University of Technology Sarawak Campus, 93350 Kuching, Sarawak (Malaysia)

    2015-08-28

    Previous studies have shown that anisotropy in phonon transport exist because of the difference in phonon dispersion relation due to different lattice direction, as observed by a difference in in-plane and cross-plane thermal conductivity. The directional preference (such as forward or backward scattering) in phonon propagation however, remains a relatively unexplored frontier. Our current work adopts a simple scattering probability in radiative transfer, which is called Henyey and Greenstein probability density function, and incorporates it into the phonon Monte Carlo simulation to investigate the effect of directional scattering in phonon transport. In this work, the effect of applying the anisotropy scattering is discussed, as well as its impact on the simulated thermal conductivity of silicon thin films. While the forward and backward scattering will increase and decrease thermal conductivity respectively, the extent of the effect is non-linear such that forward scattering has a more obvious effect than backward scattering.

  11. Thermally-treated Pt-coated silicon AFM tips for wear resistance in ferroelectric data storage

    International Nuclear Information System (INIS)

    Bhushan, Bharat; Palacio, Manuel; Kwak, Kwang Joo

    2008-01-01

    In ferroelectric data storage, a conductive atomic force microscopy (AFM) probe with a noble metal coating is placed in contact with a lead zirconate titanate (PZT) film. The understanding and improvement of probe tip wear, particularly at high velocities, is needed for high data rate recording. A commercial Pt-coated silicon AFM probe was thermally treated in order to form platinum silicide at the near-surface. Nanoindentation, nanoscratch and wear experiments were performed to evaluate the mechanical properties and wear performance at high velocities. The thermally treated tip exhibited lower wear than the untreated tip. The tip wear mechanism is adhesive and abrasive wear with some evidence of impact wear. The enhancement in mechanical properties and wear resistance in the thermally treated film is attributed to silicide formation in the near-surface. Auger electron spectroscopy and electrical resistivity measurements confirm the formation of platinum silicide. This study advances the understanding of thin film nanoscale surface interactions

  12. A study of phonon anisotropic scattering effect on silicon thermal conductivity at nanoscale

    International Nuclear Information System (INIS)

    Bong, Victor N-S; Wong, Basil T.

    2015-01-01

    Previous studies have shown that anisotropy in phonon transport exist because of the difference in phonon dispersion relation due to different lattice direction, as observed by a difference in in-plane and cross-plane thermal conductivity. The directional preference (such as forward or backward scattering) in phonon propagation however, remains a relatively unexplored frontier. Our current work adopts a simple scattering probability in radiative transfer, which is called Henyey and Greenstein probability density function, and incorporates it into the phonon Monte Carlo simulation to investigate the effect of directional scattering in phonon transport. In this work, the effect of applying the anisotropy scattering is discussed, as well as its impact on the simulated thermal conductivity of silicon thin films. While the forward and backward scattering will increase and decrease thermal conductivity respectively, the extent of the effect is non-linear such that forward scattering has a more obvious effect than backward scattering

  13. Kinetic Monte Carlo study on the evolution of silicon surface roughness under hydrogen thermal treatment

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Gang; Wang, Yu; Wang, Junzhuan; Pan, Lijia; Yu, Linwei; Zheng, Youdou; Shi, Yi, E-mail: yshi@nju.edu.cn

    2017-08-31

    Highlights: • The KMC method is adopted to investigate the relationships between surface evolution and hydrogen thermal treatment conditions. • The reduction in surface roughness is divided into two stages at relatively low temperatures, both exhibiting exponential dependence on the time. • The optimized surface structure can be obtained by precisely adjusting thermal treatment temperatures and hydrogen pressures. - Abstract: The evolution of a two-dimensional silicon surface under hydrogen thermal treatment is studied by kinetic Monte Carlo simulations, focusing on the dependence of the migration behaviors of surface atoms on both the temperature and hydrogen pressure. We adopt different activation energies to analyze the influence of hydrogen pressure on the evolution of surface morphology at high temperatures. The reduction in surface roughness is divided into two stages, both exhibiting exponential dependence on the equilibrium time. Our results indicate that a high hydrogen pressure is conducive to obtaining optimized surfaces, as a strategy in the applications of three-dimensional devices.

  14. Experimental study on surface wrinkling of silicon monoxide film on compliant substrate under thermally induced loads

    Science.gov (United States)

    Li, Chuanwei; Kong, Yingxiao; Jiang, Wenchong; Wang, Zhiyong; Li, Linan; Wang, Shibin

    2017-06-01

    The wrinkling of a silicon monoxide thin film on a compliant poly(dimethylsiloxane) (PDMS) substrate structure was experimentally investigated in this study. The self-expansion effect of PDMS during film deposition was utilized to impose a pretensile strain on the structure through a specially made fixture. A laser scanning confocal microscope (LSCM) system with an in situ heating stage was employed for the real-time measurement. The Young’s modulus of the silicon monoxide thin film as well as the PDMS substrate was measured on the basis of the elasticity theory. Moreover, the effects of temperature variations on geometric parameters in the postbuckling state, such as wavelength and amplitude, were analyzed. It was proved that wavelength is relatively immune to thermal loads, while amplitude is much more sensitive.

  15. Meshed doped silicon photonic crystals for manipulating near-field thermal radiation

    Science.gov (United States)

    Elzouka, Mahmoud; Ndao, Sidy

    2018-01-01

    The ability to control and manipulate heat flow is of great interest to thermal management and thermal logic and memory devices. Particularly, near-field thermal radiation presents a unique opportunity to enhance heat transfer while being able to tailor its characteristics (e.g., spectral selectivity). However, achieving nanometric gaps, necessary for near-field, has been and remains a formidable challenge. Here, we demonstrate significant enhancement of the near-field heat transfer through meshed photonic crystals with separation gaps above 0.5 μm. Using a first-principle method, we investigate the meshed photonic structures numerically via finite-difference time-domain technique (FDTD) along with the Langevin approach. Results for doped-silicon meshed structures show significant enhancement in heat transfer; 26 times over the non-meshed corrugated structures. This is especially important for thermal management and thermal rectification applications. The results also support the premise that thermal radiation at micro scale is a bulk (rather than a surface) phenomenon; the increase in heat transfer between two meshed-corrugated surfaces compared to the flat surface (8.2) wasn't proportional to the increase in the surface area due to the corrugations (9). Results were further validated through good agreements between the resonant modes predicted from the dispersion relation (calculated using a finite-element method), and transmission factors (calculated from FDTD).

  16. Thermal degradation mechanism of addition-cure liquid silicone rubber with urea-containing silane

    International Nuclear Information System (INIS)

    Fang, Weizhen; Zeng, Xingrong; Lai, Xuejun; Li, Hongqiang; Chen, Wanjuan; Zhang, Yajun

    2015-01-01

    Highlights: • The urea-containing silane was incorporated into addition-cure liquid silicone rubber (ALSR) via hydrosilylation reaction. • The thermal stability of the ALSR was improved by DEUPAS both in nitrogen and air • The TG–FTIR of evolved gases during degradation was performed. • The possible degradation mechanism of the ALSR samples was proposed. - Abstract: The reactive urea-containing silane, (γ-diethylureidopropyl) allyloxyethoxysilane (DEUPAS), was synthesized by the trans-etherification reaction. The chemical structure was characterized by Fourier transform infrared spectrometry (FTIR) and 1 H nuclear magnetic resonance spectrometry ( 1 H NMR). Subsequently, DEUPAS was incorporated into addition-cure liquid silicone rubber (ALSR) via hydrosilylation reaction. The thermal stability of the ALSR samples was investigated by thermogravimetry (TG) and thermogravimetry–Fourier transform infrared spectrometry (TG–FTIR). When DEUPAS was incorporated, the temperature of 10% weight loss and 20% weight loss under air atmosphere were respectively increased by 31 °C and 60 °C compared with those of the ALSR without DEUPAS. Meanwhile, the residual weight at 800 °C increased from 33.5% to 58.7%. It was found that the striking enhancement in thermal stability of the ALSR samples was likely attributed to the decomposition of the urea groups to isocyanic acid, which reacted with hydroxyl groups to inhibit the unzipping depolymerization

  17. Thermal degradation mechanism of addition-cure liquid silicone rubber with urea-containing silane

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Weizhen; Zeng, Xingrong, E-mail: psxrzeng@gmail.com; Lai, Xuejun; Li, Hongqiang; Chen, Wanjuan; Zhang, Yajun

    2015-04-10

    Highlights: • The urea-containing silane was incorporated into addition-cure liquid silicone rubber (ALSR) via hydrosilylation reaction. • The thermal stability of the ALSR was improved by DEUPAS both in nitrogen and air • The TG–FTIR of evolved gases during degradation was performed. • The possible degradation mechanism of the ALSR samples was proposed. - Abstract: The reactive urea-containing silane, (γ-diethylureidopropyl) allyloxyethoxysilane (DEUPAS), was synthesized by the trans-etherification reaction. The chemical structure was characterized by Fourier transform infrared spectrometry (FTIR) and {sup 1}H nuclear magnetic resonance spectrometry ({sup 1}H NMR). Subsequently, DEUPAS was incorporated into addition-cure liquid silicone rubber (ALSR) via hydrosilylation reaction. The thermal stability of the ALSR samples was investigated by thermogravimetry (TG) and thermogravimetry–Fourier transform infrared spectrometry (TG–FTIR). When DEUPAS was incorporated, the temperature of 10% weight loss and 20% weight loss under air atmosphere were respectively increased by 31 °C and 60 °C compared with those of the ALSR without DEUPAS. Meanwhile, the residual weight at 800 °C increased from 33.5% to 58.7%. It was found that the striking enhancement in thermal stability of the ALSR samples was likely attributed to the decomposition of the urea groups to isocyanic acid, which reacted with hydroxyl groups to inhibit the unzipping depolymerization.

  18. Radiative thermal emission from silicon nanoparticles: a reversed story from quantum to classical theory

    International Nuclear Information System (INIS)

    Roura, P.; Costa, J.

    2002-01-01

    Among the rush of papers published after the discovery of visible luminescence in porous silicon, a number of them claimed that an extraordinary behaviour had been found. However, after five years of struggling with increasingly sophisticated but not completely successful models, it was finally demonstrated that it was simply thermal radiation. Here, we calculate thermal radiation emitted by silicon nanoparticles when irradiated in vacuum with a laser beam. If one interprets this radiation as being photoluminescence, its properties appear extraordinary: non-exponential excitation and decay transients and a supralinear dependence on laser power. Within the (quantum) theory of photoluminescence, this behaviour can be interpreted as arising from a non-usual excitation mechanism known as multiphoton excitation. Although this erroneous interpretation has, to some extent, a predictive power, it is unable to give a sound explanation for the quenching of radiation when particles are not irradiated in vacuum but inside a gas. The real story of this error is presented both to achieve a deeper understanding of the radiative thermal emission of nanoparticles and as a matter of reflection on scientific activity. (author)

  19. Aluminum and silicon based phase change materials for high capacity thermal energy storage

    International Nuclear Information System (INIS)

    Wang, Zhengyun; Wang, Hui; Li, Xiaobo; Wang, Dezhi; Zhang, Qinyong; Chen, Gang; Ren, Zhifeng

    2015-01-01

    Six compositions of aluminum (Al) and silicon (Si) based materials: 87.8Al-12.2Si, 80Al–20Si, 70Al–30Si, 60Al–40Si, 45Al–40Si–15Fe, and 17Al–53Si–30Ni (atomic ratio), were investigated for potentially high thermal energy storage (TES) application from medium to high temperatures (550–1200 °C) through solid–liquid phase change. Thermal properties such as melting point, latent heat, specific heat, thermal diffusivity and thermal conductivity were investigated by differential scanning calorimetry and laser flash apparatus. The results reveal that the thermal storage capacity of the Al–Si materials increases with increasing Si concentration. The melting point and latent heat of 45Al–40Si–15Fe and 17Al–53Si–30Ni are ∼869 °C and ∼562 J g −1 , and ∼1079 °C and ∼960 J g −1 , respectively. The measured thermal conductivity of Al–Si binary materials depend on Si concentration and is higher than 80 W m −1  K −1 from room temperature to 500 °C, which is almost two orders of magnitude higher than those of salts that are commonly used phase change material for thermal energy storage. - Highlights: • Six kinds of materials were investigated for thermal energy storage (550–1200 °C). • Partial melting of Al–Si materials show progressively changing temperatures. • Studied materials can be used in three different working temperature ranges. • Materials are potentially good candidates for thermal energy storage applications.

  20. A silicon photo-multiplier signal readout using strip-line and waveform sampling for Positron Emission Tomography

    Science.gov (United States)

    Kim, H.; Chen, C.-T.; Eclov, N.; Ronzhin, A.; Murat, P.; Ramberg, E.; Los, S.; Kao, C.-M.

    2016-09-01

    A strip-line and waveform sampling based readout is a signal multiplexing method that can efficiently reduce the readout channels while fully exploiting the fast time characteristics of photo-detectors such as the SiPM. We have applied this readout method for SiPM-based time-of-flight (TOF) positron emission tomography (PET) detectors. We have prototyped strip-line boards in which 8 SiPMs (pitch 5.2 mm) are connected by using a single strip-line, and the signals appearing at the ends of the strip-line are acquired by using the DRS4 waveform sampler at a nominal sampling frequency of 1-5 GS/s. Experimental tests using laser and LYSO scintillator are carried out to assess the performance of the strip-line board. Each SiPM position, which is inferred from the arrival time difference of the two signals at the ends of the strip-line, is well identified with 2.6 mm FWHM resolution when the SiPMs are coupled to LYSO crystals and irradiated by a 22Na source. The average energy and coincidence time resolution corresponding to 511 keV photons are measured to be ∼32% and ∼510 ps FWHM, respectively, at a 5.0 GS/s DRS4 sampling rate. The results show that the sampling rate can be lowered to 1.5 GS/s without performance degradation. These encouraging initial test results indicate that the strip-line and waveform sampling readout method is applicable for SiPM-based TOF PET development.

  1. Surface modification of aluminum nitride by polysilazane and its polymer-derived amorphous silicon oxycarbide ceramic for the enhancement of thermal conductivity in silicone rubber composite

    Science.gov (United States)

    Chiu, Hsien Tang; Sukachonmakul, Tanapon; Kuo, Ming Tai; Wang, Yu Hsiang; Wattanakul, Karnthidaporn

    2014-02-01

    Polysilazane (PSZ) and its polymer-derived amorphous silicon oxycarbide (SiOC) ceramic were coated on aluminum nitride (AlN) by using a dip-coating method to allow moisture-crosslinking of PSZ on AlN, followed by heat treatment at 700 °C in air to convert PSZ into SiOC on AlN. The results from FTIR, XPS and SEM indicated that the surface of AlN was successfully coated by PSZ and SiOC film. It was found that the introduction of PSZ and SiOC film help improve in the interfacial adhesion between the modified AlN (PSZ/AlN and SiOC/AlN) and silicone rubber lead to the increase in the thermal conductivity of the composites since the thermal boundary resistance at the filler-matrix interface was decreased. However, the introduction of SiOC as an intermediate layer between AlN and silicone rubber could help increase the thermal energy transport at the filler-matrix interface rather than using PSZ. This result was due to the decrease in the surface roughness and thickness of SiOC film after heat treatment at 700 °C in air. Thus, in the present work, a SiOC ceramic coating could provide a new surface modification for the improvement of the interfacial adhesion between the thermally conductive filler and the matrix in which can enhance the thermal conductivity of the composites.

  2. Measurement of e+p neutral current deep inelastic scattering with a longitudinally polarised positron beam and X-ray radiation damage for silicon sensors

    International Nuclear Information System (INIS)

    Januschek, Friederike

    2011-01-01

    The cross sections for Neutral Current e + p Deep Inelastic Scattering (NC DIS) with longitudinally polarised positron beams were measured at a centre-of-mass energy √(s)=318 GeV using the ZEUS detector at HERA. Single-differential cross sections as a function of the virtuality of the exchanged boson, Q 2 , of the inelasticity, y, and of the Bjorken scaling variable, x, and reduced cross sections (as a function of x and Q 2 ) were measured in the phase space region defined as Q 2 >185 GeV 2 , y 2 >0.004. The results, based on data corresponding to an integrated luminosity of 135.5 pb -1 , are given for zero polarisation for the whole sample, as well as for both positive and negative values of the longitudinal polarisation of the positron beam. The measured cross sections are compared to the predictions of the Standard Model. The proton structure function xF 3 is measured and the interference term xF γZ 3 is extracted as a function of x at Q 2 =1500 GeV 2 by extrapolating the measurements done at different Q 2 values. The presented measurements of the polarised e + p NC DIS cross sections, the xF 3 structure function and the xF γZ 3 interference term exceed the precision of previous ZEUS measurements. The uncertainties of the Parton Density Functions (PDFs) for the gluon and the u-valence quark are expected to be reduced at high-x values when the presented results are included in the PDF fits of the proton. A study is presented to further reduce PDF uncertainties for the gluon at very high x (above 10 -1 ) through the inclusion of DIS dijet cross sections in a ZEUS-JETS-like PDF fit. An irradiation facility to study the X-ray-induced radiation damage of silicon sensors for the European XFEL was set up at HASYLAB. Nine gate-controlled diodes were irradiated with doses from 1 kGy to 1 GGy in several irradiation steps and the surface current I surf and the flatband voltage V fb were measured after each irradiation. It was found that both, I surf and V fb , strongly

  3. Laser cutting sandwich structure glass-silicon-glass wafer with laser induced thermal-crack propagation

    Science.gov (United States)

    Cai, Yecheng; Wang, Maolu; Zhang, Hongzhi; Yang, Lijun; Fu, Xihong; Wang, Yang

    2017-08-01

    Silicon-glass devices are widely used in IC industry, MEMS and solar energy system because of their reliability and simplicity of the manufacturing process. With the trend toward the wafer level chip scale package (WLCSP) technology, the suitable dicing method of silicon-glass bonded structure wafer has become necessary. In this paper, a combined experimental and computational approach is undertaken to investigate the feasibility of cutting the sandwich structure glass-silicon-glass (SGS) wafer with laser induced thermal-crack propagation (LITP) method. A 1064 nm semiconductor laser cutting system with double laser beams which could simultaneously irradiate on the top and bottom of the sandwich structure wafer has been designed. A mathematical model for describing the physical process of the interaction between laser and SGS wafer, which consists of two surface heating sources and two volumetric heating sources, has been established. The temperature stress distribution are simulated by using finite element method (FEM) analysis software ABAQUS. The crack propagation process is analyzed by using the J-integral method. In the FEM model, a stationary planar crack is embedded in the wafer and the J-integral values around the crack front edge are determined using the FEM. A verification experiment under typical parameters is conducted and the crack propagation profile on the fracture surface is examined by the optical microscope and explained from the stress distribution and J-integral value.

  4. Synthesis of Zirconium-Containing Polyhedral Oligometallasilsesquioxane as an Efficient Thermal Stabilizer for Silicone Rubber

    Directory of Open Access Journals (Sweden)

    Jiedong Qiu

    2018-05-01

    Full Text Available Free radicals play a negative role during the thermal degradation of silicone rubber (SR. Quenching free radicals is proposed to be an efficient way to improve the thermal-oxidative stability of SR. In this work, a novel zirconium-containing polyhedral oligometallasilsesquioxane (Zr-POSS with free-radical quenching capability was synthesized and characterized. The incorporation of Zr-POSS effectively improved the thermal-oxidative stability of SR. The T5 (temperature at 5% weight loss of SR/Zr-POSS significantly increased by 31.7 °C when compared to the unmodified SR. Notably, after aging 12 h at 280 °C, SR/Zr-POSS was still retaining about 65%, 60%, 75%, and 100% of the tensile strength, tear strength, elongation at break, and hardness before aging, respectively, while the mechanical properties of the unmodified SR were significantly decreased. The possible mechanism of Zr-POSS for improving the thermal-oxidative stability of SR was intensively studied and it was revealed that the POSS structure could act as a limiting point to suppress the random scission reaction of backbone. Furthermore, Zr could quench the free radicals by its empty orbital and transformation of valence states. Therefore, it effectively suppressed the thermal-oxidative degradation and crosslinking reaction of the side chains.

  5. In Situ Determination of Thermal Profiles during Czochralski Silicon Crystal Growth by an Eddy Current Technique.

    Science.gov (United States)

    Choe, Kwang Su.

    An eddy current testing method was developed to continuously monitor crystal growth process and determine thermal profiles in situ during Czochralski silicon crystal growth. The work was motivated by the need to improve the quality of the crystal by controlling thermal gradients and annealing history over the growth cycle. The experimental concept is to monitor intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. The experiments were performed in a resistance-heated Czochralski puller with a 203 mm (8 inch) diameter crucible containing 6.5 kg melt. The silicon crystals being grown were about 80 mm in diameter and monitored by an encircling sensor operating at three different test frequencies (86, 53 and 19 kHz). A one-dimensional analytical solution was employed to translate the detected signals into electrical conductivities. In terms of experiments, the effects of changes in growth condition, which is defined by crystal and crucible rotation rates, crucible position, pull rate, and hot-zone configuration, were investigated. Under a given steady-state condition, the thermal profile was usually stable over the entire length of crystal growth. The profile shifted significantly, however, when the crucible rotation rate was kept too high. As a direct evidence to the effects of melt flow on heat transfer process, a thermal gradient minimum was observed about the crystal/crucible rotation combination of 20/-10 rpm cw. The thermal gradient reduction was still most pronounced when the pull rate or the radiant heat loss to the environment was decreased: a nearly flat axial thermal gradient was achieved when either the pull rate was halved or the height of the exposed crucible wall was effectively doubled. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5 ^{rm o}C/mm. Regardless of growth condition, the three-frequency data revealed radial thermal gradients much larger

  6. A thermal model for czochralski silicon crystal growth with an axial magnetic field

    Science.gov (United States)

    Hjellming, L. N.

    1990-07-01

    This paper presents a thermal model for molten silicon in a Czochralski crystal puller system with an applied uniform axial magnetic field. The melt depth is treated as continually decreasing, which affects the thermal environment of the melt and crystal. The radiative heat loss and the input heat flux are treated as functions of time, with a constraint placed on the heat lost to the crystal from the melt. As the melt motion reaches a steady state rapidly, the temperature and flow fields are treated as instantaneously steady at each melt depth. The heat transport is a mixture of conduction and convection, and by considering the crystal and crucible to be rotating with the same angular velocity, the flows driven by buoyancy and thermocapillarity are isolated and provide the convective heat transport in the melt for the range of magnetic field strengths 0.2 ≤ B ≤ 1.0T.

  7. Two-laser thermal-lens determination of phosphorus in silicon

    International Nuclear Information System (INIS)

    Grishko, V.I.; Gol'dshtein, M.M.; Grishko, V.P.; Yudelevich, I.G.

    1986-01-01

    Laser thermal-lens spectrophotometry is a high-sensitivity method of measuring absorptivity, where the signal is the relative intensity change at the beam center after passage through the medium, which absorbs at the laser wavelength. The two-lens method is discussed here which employs a high-power laser to induce the lens, while the absorptivity is measured from the intensity change in the beam from a continous wave low-power test laser at a wavelength different from that for the inducing one. This paper uses two-laser thermal-lens techniques to determine phosphorus in silicon. Phosphorus is determined as the ionic association of molybdophosphoric acid with auramine

  8. Ground-state splitting of ultrashallow thermal donors with negative central-cell corrections in silicon

    Science.gov (United States)

    Hara, Akito; Awano, Teruyoshi

    2017-06-01

    Ultrashallow thermal donors (USTDs), which consist of light element impurities such as carbon, hydrogen, and oxygen, have been found in Czochralski silicon (CZ Si) crystals. To the best of our knowledge, these are the shallowest hydrogen-like donors with negative central-cell corrections in Si. We observed the ground-state splitting of USTDs by far-infrared optical absorption at different temperatures. The upper ground-state levels are approximately 4 meV higher than the ground-state levels. This energy level splitting is also consistent with that obtained by thermal excitation from the ground state to the upper ground state. This is direct evidence that the wave function of the USTD ground state is made up of a linear combination of conduction band minimums.

  9. A highly sensitive and durable electrical sensor for liquid ethanol using thermally-oxidized mesoporous silicon

    Science.gov (United States)

    Harraz, Farid A.; Ismail, Adel A.; Al-Sayari, S. A.; Al-Hajry, A.; Al-Assiri, M. S.

    2016-12-01

    A capacitive detection of liquid ethanol using reactive, thermally oxidized films constructed from electrochemically synthesized porous silicon (PSi) is demonstrated. The sensor elements are fabricated as meso-PSi (pore sizes hydrophobic PSi surface exhibited almost a half sensitivity of the thermal oxide sensor. The response to water is achieved only at the oxidized surface and found to be ∼one quarter of the ethanol sensitivity, dependent on parameters such as vapor pressure and surface tension. The capacitance response retains ∼92% of its initial value after continuous nine cyclic runs and the sensors presumably keep long-term stability after three weeks storage, demonstrating excellent durability and storage stability. The observed behavior in current system is likely explained by the interface interaction due to dipole moment effect. The results suggest that the current sensor structure and design can be easily made to produce notably higher sensitivities for reversible detection of various analytes.

  10. Study of the effect of neutron and electron irradiations on the low temperature thermal conductivity of germanium and silicon

    International Nuclear Information System (INIS)

    Vandevyver, M.

    1967-06-01

    The main results obtained from this work are the following: 1 Neutron irradiation (at 300 deg. K) produces lattice defects in germanium and silicon, and a corresponding very large lowering of the thermal conductivity is observed in the low temperature region (4-300 ). The results obtained have been explained with the help of the following hypotheses: for silicon a scattering of phonons by the stress fields produced by the defects; for germanium, a supplementary scattering of the electron phonon type. 2 Annealing treatments carried out on these materials above 373 deg. K restored the thermal conductivity over the whole temperature range of the measurements (4-300 deg. K); in the case of both germanium and silicon there were two steps in the annealing process. 3 A study of the thermal conductivity of germanium (initially P or N) after an electronic irradiation showed that the scattering of phonons could depend on the state of charge of the defects thus produced. (author) [fr

  11. Effect of rapid thermal treatment on optical properties of porous silicon surface doped lithium

    Energy Technology Data Exchange (ETDEWEB)

    Haddadi, Ikbel, E-mail: haded.ikbel@yahoo.fr; Slema, Sonia Ben; Amor, Sana Ben; Bousbih, Rabaa; Bardaoui, Afrah; Dimassi, Wissem; Ezzaouia, Hatem

    2015-04-15

    In this paper, we have studied the effect of rapid thermal annealing on the optical properties of porous silicon layers doped with lithium (Li/PS). Surface modification of As-deposited Li/PS samples through thermal annealing were investigated by varying the temperature from 100 °C to 800 °C in an infrared (IR) heated belt furnace. A decrease in the reflectivity to about 6% for Li/PS annealed at 200 °C was obtained. From Photoluminescence (PL) spectra, a blue-shift of the gap was observed when the temperature is increased to 800 °C; we correlate these results to the change in chemical composition of the layers in order to find the optimized conditions for a potential application in silicon solar cells. - Highlights: • We have varied the annealing temperature of PS doped with Li. • PL intensity shows significant variation as function of temperature. • We observe reduce of Si–O–Li bands with increasing temperature. • Concurrent with the loss of Li we observe a decrease of the PL.

  12. Effects of growth conditions on thermal profiles during Czochralski silicon crystal growth

    Science.gov (United States)

    Choe, Kwang Su; Stefani, Jerry A.; Dettling, Theodore B.; Tien, John K.; Wallace, John P.

    1991-01-01

    An eddy current testing method was used to continuously monitor crystal growth process and investigate the effects of growth conditions on thermal profiles during Czochralski silicon crystal growth. The experimental concept was to monitor the intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. In terms of the experiments, the effects of changes in growth parameters, which include the crystal and crucible rotation rates, crucible position, and pull rate, and hot-zone geometries were investigated. The results show that the crystal thermal profile could shift significantly as a function of crystal length if the closed-loop control fails to maintain a constant thermal condition. As a direct evidence to the effects of the melt flow on heat transfer processes, a thermal gradient minimum was observed when the crystal/crucible rotation combination was 20/-10 rpm cw. The thermal gradients in the crystal near the growth interface were reduced most by decreasing the pull rate or by reducing the radiant heat loss to the environment; a nearly constant axial thermal gradient was achieved when either the pull rate was decreased by half, the height of the exposed crucible wall was doubled, or a radiation shield was placed around the crystal. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5°C/mm. When compared to theoretical results found in literature, the axial profiles correlated well with the results of the models which included radiant interactions. However, the radial gradients estimated from three-frequency data were much higher than what were predicted by known theoretical models. This discrepancy seems to indicate that optical phenomenon within the crystal is significant and should be included in theoretical modeling.

  13. Mechanical and thermal properties of phthalonitrile resin reinforced with silicon carbide particles

    International Nuclear Information System (INIS)

    Derradji, Mehdi; Ramdani, Noureddine; Zhang, Tong; Wang, Jun; Feng, Tian-tian; Wang, Hui; Liu, Wen-bin

    2015-01-01

    Highlights: • SiC microparticles improve the mechanical properties of phthalonitrile resin. • Excellent thermal stability achieved by adding SiC particles in phthalonitrile resin. • Adding 20 wt.% of SiC microparticles increases the T g by 38 °C. • Silane coupling agent can enhance the adhesion and dispersion of particles/matrix. - Abstract: A new type of composite based on phthalonitrile resin reinforced with silicon carbide (SiC) microparticles was prepared. For various weight ratios ranging between 0% and 20%, the effect of the micro-SiC particles on the mechanical and thermal properties has been studied. Results from thermal analysis revealed that the starting decomposition temperature and the residual weight were significantly improved upon adding the reinforcing phase. At the maximum micro-SiC loading, dynamic mechanical analysis (DMA) showed an important enhancement in both the storage modulus and glass transition temperature (T g ), reaching 3.1 GPa and 338 °C, respectively. The flexural strength and modulus as well as the microhardness were significantly enhanced by adding the microfillers. Tensile test revealed enhancements in the composites toughness upon adding the microparticles. Polarization optical microscope (POM) and scanning electron microscope (SEM) analysis confirmed that mechanical and thermal properties improvements are essentially attributed to the good dispersion and adhesion between the particles and the resin

  14. Simultaneous measurements of thermal conductivity and electrical conductivity of micro-machined Silicon films

    International Nuclear Information System (INIS)

    Hagino, H; Kawahara, Y; Goto, A; Miyazaki, K

    2012-01-01

    The in-plane effective thermal conductivity of free-standing Si thin films with periodic micropores was measured at -100 to 0 °C. The Si thin films with micropores were prepared from silicon-on-insulator (SOI) wafers by standard microfabrication processes. The dimensions of the free-standing Si thin films were 200μm×150μm×2 μm, with staggered 4 μm pores having an average pitch of 4 mm. The Si thin film serves both as a heater and thermometer. The average temperature rise of the thin film is a function of its in-plane thermal conductivity. The effective thermal conductivity was calculated using a simple one-dimensional heat conduction model. The measured thermal conductivity was much lower than that expected based on classical model evaluations. A significant phonon size effect was observed even in the microsized structures, and the mean free path for phonons is very long even at the room temperature.

  15. Effects of quantum statistics of phonons on the thermal conductivity of silicon and germanium nanoribbons

    Science.gov (United States)

    Kosevich, Yuriy A.; Savin, Alexander V.; Cantarero, Andrés

    2013-01-01

    We present molecular dynamics simulation of phonon thermal conductivity of semiconductor nanoribbons with an account for phonon quantum statistics. In our semiquantum molecular dynamics simulation, dynamics of the system is described with the use of classical Newtonian equations of motion where the effect of phonon quantum statistics is introduced through random Langevin-like forces with a specific power spectral density (color noise). The color noise describes interaction of the molecular system with the thermostat. The thermal transport of silicon and germanium nanoribbons with atomically smooth (perfect) and rough (porous) edges are studied. We show that the existence of rough (porous) edges and the quantum statistics of phonon change drastically the low-temperature thermal conductivity of the nanoribbon in comparison with that of the perfect nanoribbon with atomically smooth edges and classical phonon dynamics and statistics. The rough-edge phonon scattering and weak anharmonicity of the considered lattice produce a weakly pronounced maximum of thermal conductivity of the nanoribbon at low temperature.

  16. Carbon nanotube-copper exhibiting metal-like thermal conductivity and silicon-like thermal expansion for efficient cooling of electronics.

    Science.gov (United States)

    Subramaniam, Chandramouli; Yasuda, Yuzuri; Takeya, Satoshi; Ata, Seisuke; Nishizawa, Ayumi; Futaba, Don; Yamada, Takeo; Hata, Kenji

    2014-03-07

    Increasing functional complexity and dimensional compactness of electronic devices have led to progressively higher power dissipation, mainly in the form of heat. Overheating of semiconductor-based electronics has been the primary reason for their failure. Such failures originate at the interface of the heat sink (commonly Cu and Al) and the substrate (silicon) due to the large mismatch in thermal expansion coefficients (∼300%) of metals and silicon. Therefore, the effective cooling of such electronics demands a material with both high thermal conductivity and a similar coefficient of thermal expansion (CTE) to silicon. Addressing this demand, we have developed a carbon nanotube-copper (CNT-Cu) composite with high metallic thermal conductivity (395 W m(-1) K(-1)) and a low, silicon-like CTE (5.0 ppm K(-1)). The thermal conductivity was identical to that of Cu (400 W m(-1) K(-1)) and higher than those of most metals (Ti, Al, Au). Importantly, the CTE mismatch between CNT-Cu and silicon was only ∼10%, meaning an excellent compatibility. The seamless integration of CNTs and Cu was achieved through a unique two-stage electrodeposition approach to create an extensive and continuous interface between the Cu and CNTs. This allowed for thermal contributions from both Cu and CNTs, resulting in high thermal conductivity. Simultaneously, the high volume fraction of CNTs balanced the thermal expansion of Cu, accounting for the low CTE of the CNT-Cu composite. The experimental observations were in good quantitative concurrence with the theoretically described 'matrix-bubble' model. Further, we demonstrated identical in-situ thermal strain behaviour of the CNT-Cu composite to Si-based dielectrics, thereby generating the least interfacial thermal strain. This unique combination of properties places CNT-Cu as an isolated spot in an Ashby map of thermal conductivity and CTE. Finally, the CNT-Cu composite exhibited the greatest stability to temperature as indicated by its low

  17. Effect of pyrolysis atmospheres on the morphology of polymer-derived silicon oxynitrocarbide ceramic films coated aluminum nitride surface and the thermal conductivity of silicone rubber composites

    Science.gov (United States)

    Chiu, Hsien T.; Sukachonmakul, Tanapon; Wang, Chen H.; Wattanakul, Karnthidaporn; Kuo, Ming T.; Wang, Yu H.

    2014-02-01

    Amorphous silicon oxycarbide (SiOC) and silicon oxynitrocarbide (SiONC) ceramic films coated aluminum nitride (AlN) were prepared by using preceramic-polysilazane (PSZ) with dip-coating method, followed by pyrolysis at 700 °C in different (air, Ar, N2 and NH3) atmospheres to converted PSZ into SiOCair and SiONC(Ar,N2andNH3) ceramic. The existence of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface was characterized by FTIR, XRD and XPS. The interfacial adhesion between silicone rubber and AlN was significantly improved after the introduction of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. It can be observed from AFM that the pyrolysis of PSZ at different atmosphere strongly affected to films morphology on AlN surface as SiOCair and SiONCNH3 ceramic films were more flat and smooth than SiONCN2 and SiONCAr ceramic films. Besides, the enhancement of the thermal conductivity of silicone rubber composites was found to be related to the decrease in the surface roughness of SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. This present work provided an alternative surface modification of thermally conductive fillers to improve the thermal conductivity of silicon rubber composites by coating with amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films.

  18. Synergistic effect and mechanism of platinum catalyst and nitrogen-containing silane on the thermal stability of silicone rubber

    International Nuclear Information System (INIS)

    Chen, Wanjuan; Zeng, Xingrong; Lai, Xuejun; Li, Hongqiang; Fang, Weizhen; Liu, Tian

    2016-01-01

    Highlights: • Platinum (Pt) and nitrogen-containing silane (NS) were introduced into silicone rubber. • The thermal stability was improved by Pt/NS both under nitrogen and air atmosphere. • The TG-FTIR of evolved gases during degradation was performed. • The synergistic effect and mechanism of Pt and NS were proposed. - Abstract: Platinum (Pt) catalyst and nitrogen-containing silane (NS) were introduced to improve the thermal stability of silicone rubber. The effects of Pt and NS on thermal stability and degradation mechanism of silicone rubber were investigated by thermogravimetry (TG), thermogravimetry-Fourier transform infrared spectrometry (TG-FTIR), scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDXS) and Fourier transform infrared spectrometry (FTIR). A significant synergism was found between Pt and NS for improving the thermal stability of silicone rubber. When 6.67 ppm of Pt and 1.4 phr of NS were introduced, the temperature of 10% and 20% weight loss under nitrogen atmosphere were respectively increased by 36 °C and 119 °C. Meanwhile, the residue weight at 900 °C was doubled to 68% in the presence of Pt/NS. The synergistic mechanism might be that the nitrogen atom coordinated with Pt and improved the catalytic efficiency of Pt. Additionally, NS preserved the catalytic activity of Pt under air atmosphere. Hence, Pt/NS efficiently catalyzed thermal crosslinking and suppressed degradation of silicone chains. Moreover, it revealed that the presence of Pt/NS protected silicone chains from oxidation. Thus, the unzipping depolymerization by silanol groups was reduced significantly.

  19. Synergistic effect and mechanism of platinum catalyst and nitrogen-containing silane on the thermal stability of silicone rubber

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Wanjuan; Zeng, Xingrong, E-mail: psxrzeng@gmail.com; Lai, Xuejun; Li, Hongqiang; Fang, Weizhen; Liu, Tian

    2016-05-20

    Highlights: • Platinum (Pt) and nitrogen-containing silane (NS) were introduced into silicone rubber. • The thermal stability was improved by Pt/NS both under nitrogen and air atmosphere. • The TG-FTIR of evolved gases during degradation was performed. • The synergistic effect and mechanism of Pt and NS were proposed. - Abstract: Platinum (Pt) catalyst and nitrogen-containing silane (NS) were introduced to improve the thermal stability of silicone rubber. The effects of Pt and NS on thermal stability and degradation mechanism of silicone rubber were investigated by thermogravimetry (TG), thermogravimetry-Fourier transform infrared spectrometry (TG-FTIR), scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDXS) and Fourier transform infrared spectrometry (FTIR). A significant synergism was found between Pt and NS for improving the thermal stability of silicone rubber. When 6.67 ppm of Pt and 1.4 phr of NS were introduced, the temperature of 10% and 20% weight loss under nitrogen atmosphere were respectively increased by 36 °C and 119 °C. Meanwhile, the residue weight at 900 °C was doubled to 68% in the presence of Pt/NS. The synergistic mechanism might be that the nitrogen atom coordinated with Pt and improved the catalytic efficiency of Pt. Additionally, NS preserved the catalytic activity of Pt under air atmosphere. Hence, Pt/NS efficiently catalyzed thermal crosslinking and suppressed degradation of silicone chains. Moreover, it revealed that the presence of Pt/NS protected silicone chains from oxidation. Thus, the unzipping depolymerization by silanol groups was reduced significantly.

  20. Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

    Science.gov (United States)

    van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

    2016-09-01

    We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

  1. Thermal and thermo-mechanical behavior of butyl based rubber exposed to silicon oil at elevated temperature

    International Nuclear Information System (INIS)

    Ali, S.; Ramzan, S.; Raza, R.; Ahmed, F.; Hussain, R.; Ullah, S.; Ali, S.

    2013-01-01

    Silica reinforced rubbers are used as chemical resistant seals at high temperature. In this study the effect of alkali and silicon oil on the thermal and thermo-mechanical properties of the silica reinforced butyl rubber exposed as an interface between two liquid media at elevated temperature is investigated. Rubber bladder containing alkaline solution was immersed in silicon oil at 195+-5 degree C for multiple cycles and loss in its thermal, thermo-mechanical and mechanical properties were studied by TGA, DMA and Tinius Olsen Testing Machine supported by FTIR and Optical microscopy. It was observed that the thermal and thermo-mechanical properties of butyl rubber were negatively affected due to leaching out of silica filler embedded in an organic matrix at elevated temperature. The thermal stability of exposed rubber was decreased around 200 degree C and the loss of storage modulus was observed up to 99.5% at -59 degree C. (author)

  2. Thermal and optical excitation of trapped electrons in high-density polyethylene (HDPE) studied through positron annihilation

    International Nuclear Information System (INIS)

    Nahid, F.; Zhang, J.D.; Yu, T.F.; Ling, C.C.; Fung, S.; Beling, C.D.

    2011-01-01

    Positronium (Ps) formation in high-density polyethylene (HDPE) has been studied below the glass transition temperature. The formation probability increases with positron irradiation time due to an increasing number of inter-track trapped electrons becoming available for positron capture. The temperature variation of the saturated Ps level is discussed in different models. The quenching of trapped electrons by light has been studied and the optical de-trapping cross-section for different photon energies has been estimated over the visible region.

  3. Effect of thermal annealing on the optical and structural properties of silicon implanted with a high hydrogen fluence

    International Nuclear Information System (INIS)

    Kling, A.; Soares, J.C.; Rodriguez, A.; Rodriguez, T.; Avella, M.; Jimenez, J.

    2006-01-01

    Silicon capped by thermal oxide has been implanted with 1 x 10 17 H/cm 2 and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality and light emission. The results show that the luminescent properties are independent of the hydrogen content but are strongly related with the present damage

  4. Thermal grafting of fluorinated molecular monolayers on doped amorphous silicon surfaces

    International Nuclear Information System (INIS)

    Sabbah, H.; Zebda, A.; Ababou-Girard, S.; Solal, F.; Godet, C.; Conde, J. P.; Chu, V.

    2009-01-01

    Thermally induced (160-300 deg. C) gas phase grafting of linear alkene molecules (perfluorodecene) was performed on hydrogenated amorphous silicon (a-Si:H) films, either nominally undoped or doped with different boron and phosphorus concentrations. Dense and smooth a-Si:H films were grown using plasma decomposition of silane. Quantitative analysis of in situ x-ray photoelectron spectroscopy indicates the grafting of a single layer of organic molecules. The hydrophobic properties of perfluorodecene-modified surfaces were studied as a function of surface coverage. Annealing experiments in ultrahigh vacuum show the covalent binding and the thermal stability of these immobilized layers up to 370 deg. C; this temperature corresponds to the Si-C bond cleavage temperature. In contrast with hydrogenated crystalline Si(111):H, no heavy wet chemistry surface preparation is required for thermal grafting of alkene molecules on a-Si:H films. A threshold grafting temperature is observed, with a strong dependence on the doping level which produces a large contrast in the molecular coverage for grafting performed at 230 deg. C

  5. Gadolinium oxide coated fully depleted silicon-on-insulator transistors for thermal neutron dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu; Gouker, Pascale M.

    2013-09-01

    Fully depleted silicon-on-insulator transistors coated with gadolinium oxide are shown to be effective thermal neutron dosimeters. The theoretical neutron detection efficiency is calculated to be higher for Gd{sub 2}O{sub 3} than for other practical converter materials. Proof-of-concept dosimeter devices were fabricated and tested during thermal neutron irradiation. The transistor current changes linearly with neutron dose, consistent with increasing positive charge in the SOI buried oxide layer generated by ionization from high energy {sup 157}Gd(n,γ){sup 158}Gd conversion electrons. The measured neutron sensitivity is approximately 1/6 the maximum theoretical value, possibly due to electron–hole recombination or conversion electron loss in interconnect wiring above the transistors. -- Highlights: • A novel Gd{sub 2}O{sub 3} coated FDSOI MOSFET thermal neutron dosimeter is presented. • Dosimeter can detect charges generated from {sup 157}Gd(n,γ){sup 158}Gd conversion electrons. • Measured neutron sensitivity is comparable to that calculated theoretically. • Dosimeter requires zero power during operation, enabling new application areas.

  6. The effect of thermal oxidation on the luminescence properties of nanostructured silicon.

    Science.gov (United States)

    Liu, Lijia; Sham, Tsun-Kong

    2012-08-06

    Herein is reported a detailed study of the luminescence properties of nanostructured Si using X-ray excited optical luminescence (XEOL) in combination with X-ray absorption near-edge structures (XANES). P-type Si nanowires synthesized via electroless chemical etching from Si wafers of different doping levels and porous Si synthesized using electrochemical method are examined under X-ray excitation across the Si K-, L(3,2) -, and O K-edges. It is found that while as-prepared Si nanostructures are weak light emitters, intense visible luminescence is observed from thermally oxidized Si nanowires and porous Si. The luminescence mechanism of Si upon oxidation is investigated by oxidizing nanostructured Si at different temperatures. Interestingly, the two luminescence bands observed show different response with the variation of absorption coefficient upon Si and O core-electron excitation in elemental silicon and silicon oxide. A correlation between luminescence properties and electronic structures is thus established. The implications of the finding are discussed in terms of the behavior of the oxygen deficient center (OCD) and non-bridging oxygen hole center (NBOHC). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. The kinetics and properties of thermal oxidation of silicon in TCA-O/sub 2/

    International Nuclear Information System (INIS)

    Ahmed, W.; Ahmed, E.

    1993-01-01

    The oxidation of silicon using dry O/sub 2/ is now well established as a key process for the fabrication of electronic devices in the semiconductor industry. However, this process is complicated by its sensitivity to impurities which reduce device yields. HCl can be added to O/sub 2/ to remove these impurities but due to its highly corrosive nature a safer and cleaner alternative such as trichloroethane (TCA) is desirable. In this paper, the thermal oxidation of silicon using a mixture of TCA-O/sub 2/ has been investigated in a large scale industrial system. The growth kinetics and the properties of these films have been studies and compared to oxides produced from dry 2. The addition of TCA generates HCl in situ, enhances the oxidation rate by approximately 54% nd improves the electrical properties. It was found that a 1 mol.% mixture gives the optimum process. An analysis of the data suggests that a liner parabolic growth model is applicable and provides a valuable insight into the physical phenomena governing this important process. (author)

  8. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    International Nuclear Information System (INIS)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

    2014-01-01

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

  9. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-20

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

  10. Measurement of e{sup +}p neutral current deep inelastic scattering with a longitudinally polarised positron beam and X-ray radiation damage for silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Januschek, Friederike

    2012-05-15

    The cross sections for Neutral Current e{sup +}p Deep Inelastic Scattering (NC DIS) with longitudinally polarised positron beams were measured at a centre-of-mass energy {radical}(s)=318 GeV using the ZEUS detector at HERA. Single-differential cross sections as a function of the virtuality of the exchanged boson, Q{sup 2}, of the inelasticity, y, and of the Bjorken scaling variable, x, and reduced cross sections (as a function of x and Q{sup 2}) were measured in the phase space region defined as Q{sup 2}>185 GeV{sup 2}, y<0.9 and y(1-x){sup 2}>0.004. The results, based on data corresponding to an integrated luminosity of 135.5 pb{sup -1}, are given for zero polarisation for the whole sample, as well as for both positive and negative values of the longitudinal polarisation of the positron beam. The measured cross sections are compared to the predictions of the Standard Model. The proton structure function xF{sub 3} is measured and the interference term xF{sup {gamma}}{sup Z}{sub 3} is extracted as a function of x at Q{sup 2}=1500 GeV{sup 2} by extrapolating the measurements done at different Q{sup 2} values. The presented measurements of the polarised e{sup +}p NC DIS cross sections, the xF{sub 3} structure function and the xF{sup {gamma}}{sup Z}{sub 3} interference term exceed the precision of previous ZEUS measurements. The uncertainties of the Parton Density Functions (PDFs) for the gluon and the u-valence quark are expected to be reduced at high-x values when the presented results are included in the PDF fits of the proton. A study is presented to further reduce PDF uncertainties for the gluon at very high x (above 10{sup -1}) through the inclusion of DIS dijet cross sections in a ZEUS-JETS-like PDF fit. An irradiation facility to study the X-ray-induced radiation damage of silicon sensors for the European XFEL was set up at HASYLAB. Nine gate-controlled diodes were irradiated with doses from 1 kGy to 1 GGy in several irradiation steps and the surface current I

  11. In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    We analyze the degradation of multi-crystalline silicon photovoltaic modules undergoing simultaneous thermal, mechanical, and humidity-freeze stress testing to develop a dark environmental chamber in-situ measurement procedure for determining module power loss. We analyze dark I-V curves measured...

  12. Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation

    Science.gov (United States)

    Veirman, J.; Dubois, S.; Enjalbert, N.; Garandet, J. P.; Heslinga, D. R.; Lemiti, M.

    2010-06-01

    This letter focuses on the variation of the Hall majority carrier mobility with the dopant compensation level in purely Boron-doped Czochralski grown silicon single crystals. Compensation was varied continuously at the sample scale via a step by step activation of the oxygen-based thermal donors. At room temperature, we show a strong drop in mobility for high compensation levels in both p- and n-type Si. Mobility models taking into account carrier scattering on ionized impurities and phonons could not reproduce this drop. We conclude that a specific effect of compensation must be taken into account to explain the observed behaviour. We qualitatively discuss physical mechanisms susceptible to reduce mobility in highly compensated Si.

  13. Effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon films

    Science.gov (United States)

    Choi, Woong; Lee, Jung-Kun; Findikoglu, Alp T.

    2006-12-01

    The authors report studies of the effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon (ACSi) films by means of capacitance-voltage (C-V) measurements. C-V curves were measured on metal-oxide-semiconductor (MOS) capacitors fabricated on ⟨001⟩-oriented ACSi films on polycrystalline substrates. From high-frequency C-V curves, the authors calculated a decrease of interface trap density from 2×1012to1×1011cm-2eV-1 as the grain mosaic spread in ACSi films improved from 13.7° to 6.5°. These results demonstrate the effectiveness of grain alignment as a process technique to achieve significantly enhanced performance in small-grained (⩽1μm ) polycrystalline Si MOS-type devices.

  14. Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

    Science.gov (United States)

    Johnson, E. S.; Compton, W. D.

    1971-01-01

    Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

  15. Thermal detection of single e-h pairs in a biased silicon crystal detector

    Science.gov (United States)

    Romani, R. K.; Brink, P. L.; Cabrera, B.; Cherry, M.; Howarth, T.; Kurinsky, N.; Moffatt, R. A.; Partridge, R.; Ponce, F.; Pyle, M.; Tomada, A.; Yellin, S.; Yen, J. J.; Young, B. A.

    2018-01-01

    We demonstrate that individual electron-hole pairs are resolved in a 1 cm2 by 4 mm thick silicon crystal (0.93 g) operated at ˜35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e- h+) pair in the crystal near the grid. The energy of the drifting charges is measured with a phonon sensor noise σ ˜0.09 e- h+ pair. The observed charge quantization is nearly identical for h+s or e-s transported across the crystal.

  16. Thermal neutron detection using a silicon pad detector and {sup 6}LiF removable converters

    Energy Technology Data Exchange (ETDEWEB)

    Barbagallo, Massimo [Istituto Nazionale di Fisica Nucleare, Sezione di Bari (Italy); Cosentino, Luigi; Marchetta, Carmelo; Pappalardo, Alfio; Scire, Carlotta; Scire, Sergio; Schillaci, Maria; Vecchio, Gianfranco; Finocchiaro, Paolo [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, Catania (Italy); Forcina, Vittorio; Peerani, Paolo [European Commission, Joint Research Centre, Institute of Transuranium Elements, Ispra (Italy); Vaccaro, Stefano [European Commission, Directorate-General for Energy (Luxembourg)

    2013-03-15

    A semiconductor detector coupled with a neutron converter is a good candidate for neutron detection, especially for its compactness and reliability if compared with other devices, such as {sup 3}He tubes, even though its intrinsic efficiency is rather lower. In this paper we show a neutron detector design consisting of a 3 cm Multiplication-Sign 3 cm silicon pad detector coupled with one or two external {sup 6}LiF layers, enriched in {sup 6}Li at 95%, placed in contact with the Si active surfaces. This prototype, first characterized and tested at INFN Laboratori Nazionali del Sud and then at JRC Ispra, was successfully shown to detect thermal neutrons with the expected efficiency and an outstanding gamma rejection capability.

  17. Silicon Nanowires for Solar Thermal Energy Harvesting: an Experimental Evaluation on the Trade-off Effects of the Spectral Optical Properties.

    Science.gov (United States)

    Sekone, Abdoul Karim; Chen, Yu-Bin; Lu, Ming-Chang; Chen, Wen-Kai; Liu, Chia-An; Lee, Ming-Tsang

    2016-12-01

    Silicon nanowire possesses great potential as the material for renewable energy harvesting and conversion. The significantly reduced spectral reflectivity of silicon nanowire to visible light makes it even more attractive in solar energy applications. However, the benefit of its use for solar thermal energy harvesting remains to be investigated and has so far not been clearly reported. The purpose of this study is to provide practical information and insight into the performance of silicon nanowires in solar thermal energy conversion systems. Spectral hemispherical reflectivity and transmissivity of the black silicon nanowire array on silicon wafer substrate were measured. It was observed that the reflectivity is lower in the visible range but higher in the infrared range compared to the plain silicon wafer. A drying experiment and a theoretical calculation were carried out to directly evaluate the effects of the trade-off between scattering properties at different wavelengths. It is clearly seen that silicon nanowires can improve the solar thermal energy harnessing. The results showed that a 17.8 % increase in the harvest and utilization of solar thermal energy could be achieved using a silicon nanowire array on silicon substrate as compared to that obtained with a plain silicon wafer.

  18. Positron sources

    International Nuclear Information System (INIS)

    Chehab, R.

    1994-01-01

    A tentative survey of positron sources is given. Physical processes on which positron generation is based are indicated and analyzed. Explanation of the general features of electromagnetic interactions and nuclear β + decay makes it possible to predict the yield and emittance for a given optical matching system between the positron source and the accelerator. Some kinds of matching systems commonly used - mainly working with solenoidal field - are studied and the acceptance volume calculated. Such knowledge is helpful in comparing different matching systems. Since for large machines, a significant distance exists between the positron source and the experimental facility, positron emittance has to be preserved during beam transfer over large distances and methods used for that purpose are indicated. Comparison of existing positron sources leads to extrapolation to sources for future linear colliders. Some new ideas associated with these sources are also presented. (orig.)

  19. Positron sources

    International Nuclear Information System (INIS)

    Chehab, R.

    1989-01-01

    A tentative survey of positron sources is given. Physical processes on which positron generation is based are indicated and analyzed. Explanation of the general features of electromagnetic interactions and nuclear β + decay makes it possible to predict the yield and emittance for a given optical matching system between the positron source and the accelerator. Some kinds of matching systems commonly used - mainly working with solenoidal fields - are studied and the acceptance volume calculated. Such knowledge is helpful in comparing different matching systems. Since for large machines, a significant distance exists between the positron source and the experimental facility, positron emittance has to be preserved during beam transfer over large distances and methods used for that purpose are indicated. Comparison of existing positron sources leads to extrapolation to sources for future linear colliders

  20. Thermally responsive silicon nanowire arrays for native/denatured-protein separation

    International Nuclear Information System (INIS)

    Wang Hongwei; Wang Yanwei; Yuan Lin; Wang Lei; Yang Weikang; Wu Zhaoqiang; Li Dan; Chen Hong

    2013-01-01

    We present our findings of the selective adsorption of native and denatured proteins onto thermally responsive, native-protein resistant poly(N-isopropylacrylamide) (PNIPAAm) decorated silicon nanowire arrays (SiNWAs). The PNIPAAm–SiNWAs surface, which shows very low levels of native-protein adsorption, favors the adsorption of denatured proteins. The amount of denatured-protein adsorption is higher at temperatures above the lower critical solution temperature (LCST) of PNIPAAm. Temperature cycling surrounding the LCST, which ensures against thermal denaturation of native proteins, further increases the amount of denatured-protein adsorption. Moreover, the PNIPAAm–SiNWAs surface is able to selectively adsorb denatured protein even from mixtures of different protein species; meanwhile, the amount of native proteins in solution is kept nearly at its original level. It is believed that these results will not only enrich current understanding of protein interactions with PNIPAAm-modified SiNWAs surfaces, but may also stimulate applications of PNIPAAm–SiNWAs surfaces for native/denatured protein separation. (paper)

  1. Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Birouk, B.; Madi, D. [Universite de Jijel, Laboratoire d' Etudes et de Modelisation en Electrotechnique (LAMEL), Cite Ouled Aissa, BP 98, Jijel (Algeria)

    2011-08-15

    The study reported in this paper contributes to better understanding the thermal oxidation effect on structural and optical properties of polycrystalline silicon heavily in situ P-LPCVD films. The deposits, doped at levels 3 x 10{sup 19} and 1.6 x 10{sup 20} cm{sup -3}, have been elaborated from silane decomposition (400 mTorrs, 605 C) on monosilicon substrate oriented left angle 111 right angle. The thermal oxidation was performed at temperatures: 850 C during 1 hour, 1000, 1050, and 1100 C during 15 minutes. The XRD spectra analysis pointed out significant left angle 111 right angle texture evolution, while in the case of left angle 220 right angle and left angle 311 right angle textures, the intensities are practically invariant (variations fall in the uncertainty intervals). The optical characterizations showed that refractive index and absorption coefficient are very sensitive to the oxidation treatment, mainly when the doping level is not very high. We think that atomic oxygen acts as defects passivating agent leading to carriers' concentration increasing. Besides, the optical behavior is modeled in visible and near infrared, by a seven-term polynomial function n {sup 2}=f({lambda} {sup 2}), with alternate signs, instead of theoretically unlimited terms number from Drude's model. It has been shown that fitting parameters fall on Gaussian curves like they do in the theoretical model. (orig.)

  2. Thermal conductivity of nanocrystalline silicon: importance of grain size and frequency-dependent mean free paths.

    Science.gov (United States)

    Wang, Zhaojie; Alaniz, Joseph E; Jang, Wanyoung; Garay, Javier E; Dames, Chris

    2011-06-08

    The thermal conductivity reduction due to grain boundary scattering is widely interpreted using a scattering length assumed equal to the grain size and independent of the phonon frequency (gray). To assess these assumptions and decouple the contributions of porosity and grain size, five samples of undoped nanocrystalline silicon have been measured with average grain sizes ranging from 550 to 64 nm and porosities from 17% to less than 1%, at temperatures from 310 to 16 K. The samples were prepared using current activated, pressure assisted densification (CAPAD). At low temperature the thermal conductivities of all samples show a T(2) dependence which cannot be explained by any traditional gray model. The measurements are explained over the entire temperature range by a new frequency-dependent model in which the mean free path for grain boundary scattering is inversely proportional to the phonon frequency, which is shown to be consistent with asymptotic analysis of atomistic simulations from the literature. In all cases the recommended boundary scattering length is smaller than the average grain size. These results should prove useful for the integration of nanocrystalline materials in devices such as advanced thermoelectrics.

  3. Preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyeon-Hye [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Han, Woong [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Lee, Hae-seong [Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Min, Byung-Gak [Department of Polymer Science & Engineering, Korea National University of Transportation, Chungju 380-702 (Korea, Republic of); Kim, Byung-Joo, E-mail: ap2-kbj@hanmail.net [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of)

    2015-10-15

    Graphical abstract: We report preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites. Thermally composites showed enhanced thermal conductivity increasing from up to 59% by the thermal network. - Highlights: • A new method of Si−N coating on carbon fibers was reported. • Silane layer were successfully converted to Si−N layer on carbon fiber surface. • Si−N formation was confirmed by FT-IR, XPS, and EDX. • Thermal conductivity of Si−N coated CF composites were enhanced to 0.59 W/mK. - Abstract: This study investigates the effect of silicon nitride (Si−N)-coated carbon fibers on the thermal conductivity of carbon-fiber-reinforced epoxy composite. The surface properties of the Si−N-coated carbon fibers (SiNCFs) were observe using Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy, and the thermal stability was analyzed using thermogravimetric analysis. SiNCFs were fabricated through the wet thermal treatment of carbon fibers (Step 1: silane finishing of the carbon fibers; Step 2: high-temperature thermal treatment in a N{sub 2}/NH{sub 3} environment). As a result, the Si−N belt was exhibited by SEM. The average thickness of the belt were 450–500 nm. The composition of Si−N was the mixture of Si−N, Si−O, and C−Si−N as confirmed by XPS. Thermal residue of the SiNCFs in air was enhanced from 3% to 50%. Thermal conductivity of the composites increased from 0.35 to 0.59 W/mK after Si−N coating on carbon surfaces.

  4. Thermal resistor on the base of silicon and some polymer semiconductors

    International Nuclear Information System (INIS)

    Marupov, R.; Kasimov, Sh.T.; Achilov, T.Kh.; Karimov, Kh.S.; Akhmedov, Kh.M.

    1995-01-01

    The purpose of present work is investigation electrical properties ofthermal resistors which was made from second cast poly-crystal silicon,poly-carbazole, and compositions of poly-crystal silicon and poly-carbazole

  5. Mechanical and thermal behavior of a prototype support structure for a large silicon vertex detector (BCD)

    International Nuclear Information System (INIS)

    Mulderink, H.; Michels, N.; Joestlein, H.

    1989-01-01

    The Bottom Collider Detector (BCD) has been proposed as a device to study large numbers of events containing B mesons. To identify secondary vertices in hadronic events it will employ the most ambitious silicon strip tracking detector proposed to-date. This report will discuss results from measurements on a first mechanical/thermal model of the vertex detector support structure. The model that was built and used for the studies described here is made of brass. Brass was used because it is readily available and easily assembled by soft soldering, and, for appropriate thicknesses, it will behave similarly to the beryllium that will be used in the actual detector. The trough was built to full scale with the reinforcement webbing and the cooling channels in place. There were no detector modules in place. We plan, however, to install modules in the trough in the future. The purpose of the model was to address two concerns that have arisen about the proposed structure of the detector. The first is whether or not the trough will be stable enough. The trough must be very light in weight yet have a high degree of rigidity. Because of the 3m length of the detector there is question as to the stiffness of the proposed trough. The main concern is that there will sagging or movement of the trough in the middle region. The second problem is the heat load. There will be a great deal of heat generated by the electronics attached to the detector modules. So the question arises as to whether or not the silicon detectors can be kept cool enough so that when the actual experiment is run the readings will be valid. The heat may also induce motion by differential expansion of support components. 26 figs

  6. A thermal model for amorphous silicon photovoltaic integrated in ETFE cushion roofs

    International Nuclear Information System (INIS)

    Zhao, Bing; Chen, Wujun; Hu, Jianhui; Qiu, Zhenyu; Qu, Yegao; Ge, Binbin

    2015-01-01

    Highlights: • A thermal model is proposed to estimate temperature of a-Si PV integrated in ETFE cushion. • Nonlinear equation is solved by Runge–Kutta method integrated in a new program. • Temperature profiles varying with weather conditions are obtained and analyzed. • Numerical results are in good line with experimental results with coefficients of 0.821–0.985. • Reasons for temperature difference of 0.9–4.6 K are solar irradiance and varying parameters. - Abstract: Temperature characteristics of amorphous silicon photovoltaic (a-Si PV) integrated in building roofs (e.g. the ETFE cushions) are indispensible for evaluating the thermal performances of a-Si PV and buildings. To investigate the temperature characteristics and temperature value, field experiments and numerical modeling were performed and compared in this paper. An experimental mock-up composed of a-Si PV and a three-layer ETFE cushion structure was constructed and experiments were carried out under four typical weather conditions (winter sunny, winter cloudy, summer sunny and summer cloudy). The measured solar irradiance and air temperature were used as the real weather conditions for the thermal model. On the other side, a theoretical thermal model was developed based on energy balance equation which was expressed as that absorbed energy was equal to converted energy and energy loss. The corresponding differential equation of PV temperature varying with weather conditions was solved by the Runge–Kutta method. The comparisons between the experimental and numerical results were focusing on the temperature characteristics and temperature value. For the temperature characteristics, good agreement was obtained by correlation analysis with the coefficients of 0.821–0.985, which validated the feasibility of the thermal model. For the temperature value, the temperature difference between the experimental and numerical results was only 0.9–4.6 K and the reasons could be the dramatical

  7. The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via

    Directory of Open Access Journals (Sweden)

    M. H. Liao

    2013-08-01

    Full Text Available The thermo-elastic strain is induced by through silicon vias (TSV due to the difference of thermal expansion coefficients between the copper (∼18 ppm/ °C and silicon (∼2.8 ppm/ °C when the structure is exposed to a thermal ramp budget in the three dimensional integrated circuit (3DIC process. These thermal expansion stresses are high enough to introduce the delamination on the interfaces between the copper, silicon, and isolated dielectric. A compact analytic model for the strain field induced by different layouts of thermal copper filled TSVs with the linear superposition principle is found to have large errors due to the strong stress interaction between TSVs. In this work, a nonlinear stress analytic model with different TSV layouts is demonstrated by the finite element method and the analysis of the Mohr's circle. The characteristics of stress are also measured by the atomic force microscope-raman technique with nanometer level space resolution. The change of the electron mobility with the consideration of this nonlinear stress model for the strong interactions between TSVs is ∼2–6% smaller in comparison with those from the consideration of the linear stress superposition principle only.

  8. Characteristics of the positron annihilation process in the matter

    International Nuclear Information System (INIS)

    Dryzek, J.

    2000-01-01

    In this report the positrons annihilation spectroscopy, as a method for the matter study is described. The interaction of positrons of high as well as thermal energies are discussed and different models of mentioned interactions are presented. Special attention is paid for positrons interaction with crystal lattice and its defects. The influence of positron beams characteristics on measured values are also discussed

  9. Toward a European Network of Positron Laboratories

    Directory of Open Access Journals (Sweden)

    Karwasz Grzegorz P.

    2015-12-01

    Full Text Available Some applications of controlled-energy positron beams in material studies are discussed. In porous organic polysilicates, measurements of 3γ annihilation by Doppler broadening (DB method at the Trento University allowed to trace pore closing and filling by water vapor. In silicon coimplanted by He+ and H+, DB data combined with positron lifetime measurements at the München pulsed positron beam allowed to explain Si blistering. Presently measured samples of W for applications in thermonuclear reactors, irradiated by W+ and electrons, show vast changes of positron lifetimes, indicating complex dynamics of defects.

  10. a Positron 2D-ACAR Study of the Silicon-Dioxide Interface and the Point Defects in the Semi-Insulating Gallium Arsenide

    Science.gov (United States)

    Peng, Jianping

    The SiO_2-Si system has been the subject of extensive study for several decades. Particular interest has been paid to the interface between Si single crystal and the amorphous SiO_2 which determines the properties and performances of devices. This is significant because of the importance of Si technology in the semiconductor industry. The development of the high-intensity slow positron beam at Brookhaven National Laboratory make it possible to study this system for the first time using the positron two-dimensional angular correlation of annihilation radiation (2D-ACAR) technique. 2D-ACAR is a well established and is a non-destructive microscopic probe for studying the electronic structure of materials, and for doing the depth-resolved measurements. Some unique information was obtained from the measurements performed on the SiO_2-Si system: Positronium (Ps) atoms formation and trapping in microvoids in both oxide and interface regions; and positron annihilation at vacancy-like defects in the interface region which can be attributed to the famous Pb centers. The discovery of the microvoids in the interface region may have some impact on the fabrication of the next generation electronic devices. Using the conventional 2D-ACAR setup with a ^{22}Na as positron source, we also studied the native arsenic (As) vacancy in the semi -insulating gallium-arsenide (SI-GaAs), coupled with in situ infrared light illumination. The defect spectrum was obtained by comparing the spectrum taken without photo -illumination to the spectrum taken with photo-illumination. The photo-illumination excited electrons from valence band to the defect level so that positrons can become localized in the defects. The two experiments may represent a new direction of the application of positron 2D-ACAR technique on the solid state physics and materials sciences.

  11. Post-deposition thermal annealing studies of hydrogenated microcrystalline silicon deposited at 40 deg. C

    International Nuclear Information System (INIS)

    Bronsveld, P.C.P.; Wagt, H.J. van der; Rath, J.K.; Schropp, R.E.I.; Beyer, W.

    2007-01-01

    Post-deposition thermal annealing studies, including gas effusion measurements, measurements of infrared absorption versus annealing state, cross-sectional transmission electron microscopy (X-TEM) and atomic force microscopy (AFM), are used for structural characterization of hydrogenated amorphous and microcrystalline silicon films, prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at low substrate temperature (T S ). Such films are of interest for application in thin semiconductor devices deposited on cheap plastics. For T S ∼ 40 deg. C, H-evolution shows rather complicated spectra for (near-) microcrystalline material, with hydrogen effusion maxima seen at ∼ 200-250 deg. C, 380 deg. C and ∼ 450-500 deg. C, while for the amorphous material typical spectra for good-quality dense material are found. Effusion experiments of implanted He demonstrate for the microcrystalline material the presence of a rather open (void-rich) structure. A similar tendency can be concluded from Ne effusion experiments. Fourier Transform infrared (FTIR) spectra of stepwise annealed samples show Si-H bond rupture already at annealing temperatures of 150 deg. C. Combined AFM/X-TEM studies reveal a columnar microstructure for all of these (near-) microcrystalline materials, of which the open structure is the most probable explanation of the shift of the H-effusion maximum in (near-) microcrystalline material to lower temperature

  12. Laser Soldering and Thermal Cycling Tests of Monolithic Silicon Pixel Chips

    CERN Document Server

    Strand, Frode Sneve

    2015-01-01

    An ALPIDE-1 monolithic silicon pixel sensor prototype has been laser soldered to a flex printed circuit using a novel interconnection technique using lasers. This technique is to be optimised to ensure stable, good quality connections between the sensor chips and the FPCs. To test the long-term stability of the connections, as well as study the effects on hit thresholds and noise in the sensor, it was thermally cycled in a climate chamber 1200 times. The soldered connections showed good qualities like even melting and good adhesion on pad/flex surfaces, and the chip remained in working condition for 1080 cycles. After this, a few connections failed, having cracks in the soldering tin, rendering the chip unusable. Threshold and noise characteristics seemed stable, except for the noise levels of sector 2 in the chip, for 1000 cycles in a temperature interval of "10^{\\circ}" and "50^{\\circ}" C. Still, further testing with wider temperature ranges and more cycles is needed to test the limitations of the chi...

  13. Towards a subcutaneous optical biosensor based on thermally hydrocarbonised porous silicon.

    Science.gov (United States)

    Tong, Wing Yin; Sweetman, Martin J; Marzouk, Ezzat R; Fraser, Cara; Kuchel, Tim; Voelcker, Nicolas H

    2016-01-01

    Advanced biosensors in future medicine hinge on the evolvement of biomaterials. Porous silicon (pSi), a generally biodegradable and biocompatible material that can be fabricated to include environment-responsive optical characteristics, is an excellent candidate for in vivo biosensors. However, the feasibility of using this material as a subcutaneously implanted optical biosensor has never been demonstrated. Here, we investigated the stability and biocompatibility of a thermally-hydrocarbonised (THC) pSi optical rugate filter, and demonstrated its optical functionality in vitro and in vivo. We first compared pSi films with different surface chemistries and observed that the material was cytotoxic despite the outstanding stability of the THC pSi films. We then showed that the cytotoxicity correlates with reactive oxygen species levels, which could be mitigated by pre-incubation of THC pSi (PITHC pSi). PITHC pSi facilitates normal cellular phenotypes and is biocompatible in vivo. Importantly, the material also possesses optical properties capable of responding to microenvironmental changes that are readable non-invasively in cell culture and subcutaneous settings. Collectively, we demonstrate, for the first time, that PITHC pSi rugate filters are both biocompatible and optically functional for lab-on-a-chip and subcutaneous biosensing scenarios. We believe that this study will deepen our understanding of cell-pSi interactions and foster the development of implantable biosensors. Copyright © 2015 Elsevier Ltd. All rights reserved.

  14. Thermodynamic analysis of thermal plasma process of composite zirconium carbide and silicon carbide production from zircon concentrates

    International Nuclear Information System (INIS)

    Kostic, Z.G.; Stefanovic, P.Lj.; Pavlovic; Pavlovic, Z.N.; Zivkovic, N.V.

    2000-01-01

    Improved zirconium ceramics and composites have been invented in an effort to obtain better resistance to ablation at high temperature. These ceramics are suitable for use as thermal protection materials on the exterior surfaces of spacecraft, and in laboratory and industrial environments that include flows of hot oxidizing gases. Results of thermodynamic consideration of the process for composite zirconium carbide and silicon carbide ultrafine powder production from ZrSiO 4 in argon thermal plasma and propane-butane gas as reactive quenching reagents are presented in the paper. (author)

  15. Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

    International Nuclear Information System (INIS)

    Choi, H.Y.; Wong, H.; Filip, V.; Sen, B.; Kok, C.W.; Chan, M.; Poon, M.C.

    2006-01-01

    It was recently found that the silicon oxynitride prepared by oxidation of silicon-rich silicon nitride (SRN) has several important features. The high nitrogen and extremely low hydrogen content of this material allows it to have a high dielectric constant and a low trap density. The present work investigates in further detail the electrical reliability of this kind of gate dielectric films by studying the charge trapping and interface state generation induced by constant current stressing. Capacitance-voltage (C-V) measurements indicate that for oxidation temperatures of 850 and 950 deg. C, the interface trap generation is minimal because of the high nitrogen content at the interface. At a higher oxidation temperature of 1050 deg. C, a large flatband shift is found for constant current stressing. This observation can be explained by the significant reduction of the nitrogen content and the phase separation effect at this temperature as found by X-ray photoelectron spectroscopy study. In addition to the high nitrogen content, the Si atoms at the interface exist in the form of random bonding to oxygen and nitrogen atoms for samples oxidized at 850 and 950 deg. C. This structure reduces the interface bonding constraint and results in the low interface trap density. For heavily oxidized samples the trace amount of interface nitrogen atoms exist in the form of a highly constraint SiN 4 phase and the interface oxynitride layer is a random mixture of SiO 4 and SiN 4 phases, which consequently reduces the reliability against high energy electron stressing

  16. Phosphorus-defect interactions during thermal annealing of ion implanted silicon

    Science.gov (United States)

    Keys, Patrick Henry

    Ion implantation of dopant atoms into silicon generates nonequilibrium levels of crystal defects that can lead to the detrimental effects of transient enhanced diffusion (TED), incomplete dopant activation, and p-n junction leakage. In order to control these effects, it is vital to have a clear understanding of dopant-defect interactions and develop models that account for these interactions. This research focuses on experimentally investigating and modeling the clustering of phosphorus dopant atoms with silicon interstitials. Damage recovery of 40keV Si+ implants in phosphorus doped wells is experimentally analyzed. The effects of background phosphorus concentration, self implant dose, and anneal temperature are investigated. Phosphorus concentrations ranging from 2.0 x 1017 to 4.0 x 1019 cm-3 and Si+ doses ranging from 5.0 x 1013 cm-2 to 2.0 x 1014 cm-2 are studied during 650-800°C anneals. A dramatic reduction in the number of interstitials bound in {311} defects with increasing phosphorus background concentration is observed. It is suggested that the reduction of interstitials in {311} defects at high phosphorus concentrations is due to the formation of phosphorus-interstitial clusters (PICs). The critical concentration for clustering (approximately 1.0 x 1019 cm-3 at 750°C) is strongly temperature dependent and in close agreement with the kink concentration of phosphorus diffusion. Information gained from these "well experiments" is applied to the study of direct phosphorus implantation. An experimental study is conducted on 40keV phosphorus implanted to a dose of 1.0 x 1014 cm-2 during 650-800°C anneals. Electrically inactive PICs are shown to form at concentrations below the solid solubility limit due to high interstitial supersaturations. Data useful for developing a model to accurately predict phosphorus diffusion under nonequilibrium conditions are extracted from the experimental results. A cluster-mediated diffusion model is developed using the

  17. Effect of Current Density on Thermal and Optical Properties of p-Type Porous Silicon

    International Nuclear Information System (INIS)

    Kasra Behzad; Wan Mahmood Mat Yunus; Zainal Abidin Talib; Azmi Zakaria; Afarin Bahrami

    2011-01-01

    The different parameters of the porous silicon (PSi) can be tuned by changing some parameters in preparation process. We have chosen the anodization as formation method, so the related parameters should be changed. In this study the porous silicon (PSi) layers were formed on p-type Si wafer. The samples were anodized electrically in a fixed etching time under some different current densities. The structural and optical properties of porous silicon (PSi) on silicon (Si) substrates were investigated using photoluminescence (PL) and Photoacoustic Spectroscopy (PAS). (author)

  18. Microstructure Evolution and Protrusion of Electroplated Cu-Filled Through-Silicon Vias Subjected to Thermal Cyclic Loading

    Science.gov (United States)

    Chen, Si; An, Tong; Qin, Fei; Chen, Pei

    2017-10-01

    Through-silicon vias (TSVs) have become an important technology for three-dimensional integrated circuit (3D IC) packaging. Protrusion of electroplated Cu-filled vias is a critical reliability issue for TSV technology. In this work, thermal cycling tests were carried out to identify how the microstructure affects protrusion during thermal cycling. Cu protrusion occurs when the loading temperature is higher than 149°C. During the first five thermal cycles, the grain size of Cu plays a dominant role in the protrusion behavior. Larger Cu grain size before thermal cycling results in greater Cu protrusion. With increasing thermal cycle number, the effect of the Cu grain size reduces and the microstrain begins to dominate the Cu protrusion behavior. Higher magnitude of microstrain within Cu results in greater protrusion increment during subsequent thermal cycles. When the thermal cycle number reaches 25, the protrusion rate of Cu slows down due to strain hardening. After 30 thermal cycles, the Cu protrusion stabilizes within the range of 1.92 μm to 2.09 μm.

  19. A magnetic resonance study of 3d transition metals and thermal donors in silicon

    International Nuclear Information System (INIS)

    Wezep, D.A. van.

    1986-01-01

    This thesis describes a study of 3d-transition metal impurities in silicon (titanium and iron in particular) and a study of oxygen-related heat-treatment centers in silicon, both carried out mainly by magnetic resonances techniques like EPR and ENDOR. 119 refs.; 31 figs.; 14 tabs

  20. Equivalence of the equilibrium and the nonequilibrium molecular dynamics methods for thermal conductivity calculations: From bulk to nanowire silicon

    Science.gov (United States)

    Dong, Haikuan; Fan, Zheyong; Shi, Libin; Harju, Ari; Ala-Nissila, Tapio

    2018-03-01

    Molecular dynamics (MD) simulations play an important role in studying heat transport in complex materials. The lattice thermal conductivity can be computed either using the Green-Kubo formula in equilibrium MD (EMD) simulations or using Fourier's law in nonequilibrium MD (NEMD) simulations. These two methods have not been systematically compared for materials with different dimensions and inconsistencies between them have been occasionally reported in the literature. Here we give an in-depth comparison of them in terms of heat transport in three allotropes of Si: three-dimensional bulk silicon, two-dimensional silicene, and quasi-one-dimensional silicon nanowire. By multiplying the correlation time in the Green-Kubo formula with an appropriate effective group velocity, we can express the running thermal conductivity in the EMD method as a function of an effective length and directly compare it to the length-dependent thermal conductivity in the NEMD method. We find that the two methods quantitatively agree with each other for all the systems studied, firmly establishing their equivalence in computing thermal conductivity.

  1. Growth of High-Density Zinc Oxide Nanorods on Porous Silicon by Thermal Evaporation

    Directory of Open Access Journals (Sweden)

    Nurul Izni Rusli

    2012-12-01

    Full Text Available The formation of high-density zinc oxide (ZnO nanorods on porous silicon (PS substrates at growth temperatures of 600–1000 °C by a simple thermal evaporation of zinc (Zn powder in the presence of oxygen (O2 gas was systematically investigated. The high-density growth of ZnO nanorods with (0002 orientation over a large area was attributed to the rough surface of PS, which provides appropriate planes to promote deposition of Zn or ZnOx seeds as nucleation sites for the subsequent growth of ZnO nanorods. The geometrical morphologies of ZnO nanorods are determined by the ZnOx seed structures, i.e., cluster or layer structures. The flower-like hexagonal-faceted ZnO nanorods grown at 600 °C seem to be generated from the sparsely distributed ZnOx nanoclusters. Vertically aligned hexagonal-faceted ZnO nanorods grown at 800 °C may be inferred from the formation of dense arrays of ZnOx clusters. The formation of disordered ZnO nanorods formed at 1000 °C may due to the formation of a ZnOx seed layer. The growth mechanism involved has been described by a combination of self-catalyzed vapor-liquid-solid (VLS and vapor-solid (VS mechanism. The results suggest that for a more precise study on the growth of ZnO nanostructures involving the introduction of seeds, the initial seed structures must be taken into account given their significant effects.

  2. Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

    Science.gov (United States)

    Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

    2014-10-21

    Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

  3. Wide-range and fast thermally-tunable silicon photonic microring resonators using the junction field effect.

    Science.gov (United States)

    Wang, Xiaoxi; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

    2016-10-03

    Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a "pinched" p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 μs 10%-90% transition time, and with efficiency of 3.2 μW/GHz.

  4. Rapid thermal process by RF heating of nano-graphene layer/silicon substrate structure: Heat explosion theory approach

    Science.gov (United States)

    Sinder, M.; Pelleg, J.; Meerovich, V.; Sokolovsky, V.

    2018-03-01

    RF heating kinetics of a nano-graphene layer/silicon substrate structure is analyzed theoretically as a function of the thickness and sheet resistance of the graphene layer, the dimensions and thermal parameters of the structure, as well as of cooling conditions and of the amplitude and frequency of the applied RF magnetic field. It is shown that two regimes of the heating can be realized. The first one is characterized by heating of the structure up to a finite temperature determined by equilibrium between the dissipated loss power caused by induced eddy-currents and the heat transfer to environment. The second regime corresponds to a fast unlimited temperature increase (heat explosion). The criterions of realization of these regimes are presented in the analytical form. Using the criterions and literature data, it is shown the possibility of the heat explosion regime for a graphene layer/silicon substrate structure at RF heating.

  5. Thermal and hydrodynamic studies for micro-channel cooling for large area silicon sensors in high energy physics experiments

    Energy Technology Data Exchange (ETDEWEB)

    Flaschel, Nils; Ariza, Dario; Diez, Sergio; Gregor, Ingrid-Maria; Tackmann, Kerstin [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Gerboles, Marta; Jorda, Xavier; Mas, Roser; Quirion, David; Ullan, Miguel [Centro Nacional de Microelectronica, Barcelona (Spain)

    2017-01-15

    Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today's prospects of micro-fabricating silicon opens a door to a more direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. In this paper, we are investigating micro-channel cooling as a candidate for a future cooling system for silicon detectors in a generic research and development approach. The work presented in this paper includes the production and the hydrodynamic and thermal testing of a micro-channel equipped prototype optimized to achieve a homogeneous flow distribution. Furthermore, the device was simulated using finite element methods.

  6. Thermal and hydrodynamic studies for micro-channel cooling for large area silicon sensors in high energy physics experiments

    International Nuclear Information System (INIS)

    Flaschel, Nils; Ariza, Dario; Diez, Sergio; Gregor, Ingrid-Maria; Tackmann, Kerstin; Gerboles, Marta; Jorda, Xavier; Mas, Roser; Quirion, David; Ullan, Miguel

    2017-01-01

    Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today's prospects of micro-fabricating silicon opens a door to a more direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. In this paper, we are investigating micro-channel cooling as a candidate for a future cooling system for silicon detectors in a generic research and development approach. The work presented in this paper includes the production and the hydrodynamic and thermal testing of a micro-channel equipped prototype optimized to achieve a homogeneous flow distribution. Furthermore, the device was simulated using finite element methods.

  7. Assessment of thermal shock induced damage in silicon carbide fibre reinforced glass matrix composites

    Directory of Open Access Journals (Sweden)

    Boccaccini, A. R.

    1998-09-01

    Full Text Available The development of microstructural damage in silicon carbide fibre (Nicalon™ reinforced glass matrix composite samples subjected to thermal shock was investigated by using a nondestructive forced resonance technique and fibre push out indentation tests. Thermal shock testing involved quenching samples in a water bath maintained at room temperature from a high temperature (650ºC. Changes in the Young's modulus and internal friction of the samples with increasing number of shocks were measured accurately by the forced resonance technique. Fibre push-out tests showed no significant changes in the properties of the fibre-matrix interface, indicating that damage in the composite was concentrated mainly in the development of matrix microcracking. It was also shown that the internal friction is a very sensitive parameter by which to detect the onset and development of such microcracking. A simple semi-empirical model is proposed to correlate the internal friction level with the microcracking density in the glass matrix. Finally, the relevance of detecting nondestructively the existence of microcracks in the glass matrix, before any significant interfacial degradation occurs, is emphasized, in conextion with the possibility of inducing a crack healing process by a thermal treatment (annealing, taking advantage of the viscous flow properties of the glass.

    El desarrollo de daño microestructural en materiales compuestos de matriz de vidrio reforzados con fibras de carburo de silicio (Nicalon™ sometidos a choque térmico fue investigado mediante la técnica no-destructiva de resonancia forzada y por mediciones de indentación "push-out" de fibras. Los ensayos de choque térmico involucraron el enfriamiento brusco en un baño de agua a temperatura ambiente de las piezas previamente calentadas a una temperatura elevada (650ºC. La técnica de resonancia forzada permitió medir cambios en el módulo de Young de elasticidad y en la fricci

  8. Performance Enhancement of Silicon Alloy-Based Anodes Using Thermally Treated Poly(amide imide) as a Polymer Binder for High Performance Lithium-Ion Batteries.

    Science.gov (United States)

    Yang, Hwi Soo; Kim, Sang-Hyung; Kannan, Aravindaraj G; Kim, Seon Kyung; Park, Cheolho; Kim, Dong-Won

    2016-04-05

    The development of silicon-based anodes with high capacity and good cycling stability for next-generation lithium-ion batteries is a very challenging task due to the large volume changes in the electrodes during repeated cycling, which results in capacity fading. In this work, we synthesized silicon alloy as an active anode material, which was composed of silicon nanoparticles embedded in Cu-Al-Fe matrix phases. Poly(amide imide)s, (PAI)s, with different thermal treatments were used as polymer binders in the silicon alloy-based electrodes. A systematic study demonstrated that the thermal treatment of the silicon alloy electrodes at high temperature made the electrodes mechanically strong and remarkably enhanced the cycling stability compared to electrodes without thermal treatment. The silicon alloy electrode thermally treated at 400 °C initially delivered a discharge capacity of 1084 mAh g(-1) with good capacity retention and high Coulombic efficiency. This superior cycling performance was attributed to the strong adhesion of the PAI binder resulting from enhanced secondary interactions, which maintained good electrical contacts between the active materials, electronic conductors, and current collector during cycling. These findings are supported by results from X-ray photoelectron spectroscopy, scanning electron microscopy, and a surface and interfacial cutting analysis system.

  9. Preparation, Characterization, Thermal, and Flame-Retardant Properties of Green Silicon-Containing Epoxy/Functionalized Graphene Nanosheets Composites

    Directory of Open Access Journals (Sweden)

    Ming-Yuan Shen

    2013-01-01

    Full Text Available In this investigation, silane was grafted onto the surface of graphene nanosheets (GNSs through free radical reactions, to form Si-O-Et functional groups that can undergo the sol-gel reaction. To improve the compatibility between the polymer matrix and the fillers, epoxy monomer was modified using a silane coupling agent; then, the functionalized GNSs were added to the modified epoxy to improve the thermal stability and strengthen the flame-retardant character of the composites. High-resolution X-ray photoelectron spectrometry reveals that when the double bonds in VTES are grafted to the surfaces of GNSs. Solid-state 29Si nuclear magnetic resonance presents that the distribution of the signal associated with the T3 structure is wide and significant, indicating that the functionalization reaction of the silicone in the modified epoxy and VTES-GNSs increases the network-like character of the structures. Thermal gravimetric analysis, the integral procedure decomposition temperature, and limiting oxygen index demonstrate that the GNSs composites that contained silicon had a higher thermal stability and stronger flame-retardant character than pure epoxy. The dynamic storage modulus of all of the m-GNSs containing composites was significantly higher than that of the control epoxy, and the modulus of the composites increased with the concentration of m-GNSs.

  10. The thermal neutron absorption cross-sections, resonance integrals and resonance parameters of silicon and its stable isotopes

    International Nuclear Information System (INIS)

    Story, J.S.

    1969-09-01

    The data available up to the end of November 1968 on the thermal neutron absorption cross-sections, resonance absorption integrals, and resonance parameters of silicon and its stable isotopes are collected and discussed. Estimates are given of the mean spacing of the energy levels of the compound nuclei near the neutron binding energy. It is concluded that the thermal neutron absorption cross-section and resonance absorption integral of natural silicon are not well established. The data on these two parameters are somewhat correlated, and three different assessments of the resonance integral are presented which differ over-all by a factor of 230. Many resonances have been detected by charged particle reactions which have not yet been observed in neutron cross-section measurements. One of these resonances of Si 2 8, at E n = 4 ± 5 keV might account for the large resonance integral which is derived, very uncertainly, from integral data. The principal source of the measured resonance integral of Si 3 0 has not yet been located. The thermal neutron absorption cross-section of Si 2 8 appears to result mainly from a negative energy resonance, possibly the resonance at E n = - 59 ± 5 keV detected by the Si 2 8 (d,p) reaction. (author)

  11. Finite element modelling and experimental characterization of an electro-thermally actuated silicon-polymer micro gripper

    International Nuclear Information System (INIS)

    Krecinic, F; Duc, T Chu; Sarro, P M; Lau, G K

    2008-01-01

    This paper presents simulation and experimental characterization of an electro-thermally actuated micro gripper. This micro actuator can conceptually be seen as a bi-morph structure of SU-8 and silicon, actuated by thermal expansion of the polymer. The polymer micro gripper with an embedded comb-like silicon skeleton is designed to reduce unwanted out-of-plane bending of the actuator, while offering a large gripper stroke. The temperature and displacement field of the micro gripper structure is determined using a two-dimensional finite element analysis. This analysis is compared to experimental data from steady-state and transient measurements of the integrated heater resistance, which depends on the average temperature of the actuator. The stability of the polymer actuator is evaluated by recording the transient behaviour of the actual jaw displacements. The maximum single jaw displacement of this micro gripper design is 34 µm at a driving voltage of 4 V and an average actuator temperature of 170 °C. The transient thermal response is modelled by a first-order system with a characteristic time constant of 11.1 ms. The simulated force capability of the device is 0.57 mN per µm jaw displacement

  12. Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

    OpenAIRE

    Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón

    2014-01-01

    The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the tra...

  13. Effect of cobalt-60 γ radiation and of thermal neutrons on high resistance P and N silicon. Possibility of obtaining a nuclear compensation for P type silicon

    International Nuclear Information System (INIS)

    Messier, J.

    1965-11-01

    Type P silicon has been compensated by the production of a controlled and uniform amount of donor atoms ( 31 P) using thermal neutrons to bring about a nuclear transformation. It is shown that it is possible in this way to reduce by a factor of about one hundred the overall concentration of residual ionised impurities in the purest crystals obtained by floating zone purification (2 x 10 12 atoms/cm 3 ). The degree compensation obtained is limited by the initial inhomogeneity of acceptor impurities which have to be compensated. Lattice defects which still remain after prolonged annealings reduce the life-time of the material to about 10 μs approximately. Particle detectors having thicknesses of 2 to 5 mm have been built by this process; they give good results, particularly at low temperatures. A study has also been made of the number and of the nature of lattice defects produced by thermal neutrons in high resistivity P and N type crystals. These defects have been compared to those produced by γ rays from 60 Co. A discussion is given of the validity of the Wertheim model concerning pronounced recombination at low temperatures (77 deg. K - 300 deg. K) of primary defect-interstitial pairs. The nature of the defects introducing energy levels into the lower half of the forbidden band has been studied. (author) [fr

  14. High aspect ratio silicon nanomoulds for UV embossing fabricated by directional thermal oxidation using an oxidation mask

    International Nuclear Information System (INIS)

    Chen, L Q; Chan-Park, Mary B; Yan, Y H; Zhang Qing; Li, C M; Zhang Jun

    2007-01-01

    Nanomoulding is simple and economical but moulds with nanoscale features are usually prohibitively expensive to fabricate because nanolithographic techniques are mostly serial and time-consuming for large-area patterning. This paper describes a novel, simple and inexpensive parallel technique for fabricating nanoscale pattern moulds by silicon etching followed by thermal oxidation. The mask pattern can be made by direct photolithography or photolithography followed by metal overetching for submicron- and nanoscale features, respectively. To successfully make nanoscale channels having a post-oxidation cross-sectional shape similar to that of the original channel, an oxidation mask to promote unidirectional (specifically horizontal) oxide growth is found to be essential. A silicon nitride or metal mask layer prevents vertical oxidation of the Si directly beneath it. Without this mask, rectangular channels become smaller but are V-shaped after oxidation. By controlling the silicon etch depth and oxidation time, moulds with high aspect ratio channels having widths ranging from 500 to 50 nm and smaller can be obtained. The nanomould, when passivated with a Teflon-like layer, can be used for first-generation replication using ultraviolet (UV) nanoembossing and second-generation replication in other materials, such as polydimethylsiloxane (PDMS). The PDMS stamp, which was subsequently coated with Au, was used for transfer printing of Au electrodes with a 600 nm gap which will find applications in plastics nanoelectronics

  15. Planned Positron Factory project

    International Nuclear Information System (INIS)

    Okada, Sohei

    1990-01-01

    The Japan Atomic Energy Research Institute, JAERI, has started, drafting a construction plan for the 'Positron Factory', in which intense energy-controllable monoenergetic positron beams are produced from pair-production reactions caused by high-energy electrons from a linac. The JAERI organized a planning committee to provide a basic picture for the Positron Factory. This article presents an overview of the interactions of positrons, intense positron sources and the research program and facilities planned for the project. The interactions of positrons and intense positron sources are discussed focusing on major characteristics of positrons in different energy ranges. The research program for the Positron Factory is then outlined, focusing on advanced positron annihilation techniques, positron spectroscopy (diffraction, scattering, channeling, microscopy), basic positron physics (exotic particle science), and positron beam technology. Discussion is also made of facilities required for the Positron Factory. (N.K.)

  16. Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

    Energy Technology Data Exchange (ETDEWEB)

    Mondon, A., E-mail: andrew.mondon@ise.fraunhofer.de [Fraunhofer ISE, Heidenhofst. 2, D-79110 Freiburg (Germany); Wang, D. [Karlsruhe Nano Micro Facility (KNMF), H.-von-Helmholz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany); Zuschlag, A. [Universität Konstanz FB Physik, Jacob-Burckhardt-Str. 27, D-78464 Konstanz (Germany); Bartsch, J.; Glatthaar, M.; Glunz, S.W. [Fraunhofer ISE, Heidenhofst. 2, D-79110 Freiburg (Germany)

    2014-12-30

    Highlights: • Adhesion of metallization of fully plated nickel–copper contacts on silicon solar cells can be achieved by formation of nickel silicide at the cost of degraded cell performance. • Understanding of silicide growth mechanisms and controlled growth may lead to high performance together with excellent adhesion. • Silicide formation is well known from CMOS production from PVD-Ni on flat surfaces. Yet the deposition methods and therefore layer characteristics and the surface topography are different for plated metallization. • TEM analysis is performed for differently processed samples. • A nickel silicide growth model is created for plated Ni on textured silicon solar cells. - Abstract: In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel–silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide

  17. Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

    Directory of Open Access Journals (Sweden)

    Neha Batra

    2015-06-01

    Full Text Available The effect of deposition temperature (Tdep and subsequent annealing time (tanl of atomic layer deposited aluminum oxide (Al2O3 films on silicon surface passivation (in terms of surface recombination velocity, SRV is investigated. The pristine samples (as-deposited show presence of positive fixed charges, QF. The interface defect density (Dit decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min.

  18. Semiconductor-metal phase transition of vanadium dioxide nanostructures on silicon substrate: Applications for thermal control of spacecraft

    International Nuclear Information System (INIS)

    Leahu, G. L.; Li Voti, R.; Larciprete, M. C.; Belardini, A.; Mura, F.; Sibilia, C.; Bertolotti, M.; Fratoddi, I.

    2013-01-01

    We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO2) film deposited on silicon wafer. The VO2 phase transition is studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO2 which has been explained by applying the Maxwell Garnett effective medium approximation theory, together with a strong hysteresis phenomenon, both useful to design tunable thermal devices to be applied for the thermal control of spacecraft. We have also applied the photothermal radiometry in order to study the changes in the modulated emissivity induced by laser. Experimental results show how the use of these techniques represent a good tool for a quantitative measurement of the optothermal properties of vanadium dioxide based structures

  19. Microstudies on thermal and UV treated silicone-acrylic paints with different pigment volume concentrations

    International Nuclear Information System (INIS)

    Chew, K.W.; Abdul Kariem Arof; Yahaya, A.H.; Yahya, R.; Puteh, R.

    2002-01-01

    The effect of pigment volume concentration (PVC) on morphology of pigment particles employed in the silicone-acrylic compositions suitable for high temperature corrosion protection application, has been investigated using SEM. Silicone-acrylic based paints with 50% silicone resin have been selected to prepare paints with PVC values from 10% to 60%. The paints were applied on mild steel panels of size of 5 cm x 7.5 cm. After curing for one week, the panels were subjected to 24 hours of heating ranging from room temperature up to 300 degree C and 400 hours of UV weathering. After the corrosion test, SEM micrographs were taken to investigate the gloss, rusting and adhesion properties of the coating films. (Author)

  20. Harmonic and Anharmonic Properties of Diamond Structure Crystals with Application to the Calculation of the Thermal Expansion of Silicon. Ph.D. Thesis. Final Report

    Science.gov (United States)

    Wanser, K. H.

    1981-01-01

    Silicon has interesting harmonic and anharmonic properties such as the low lying transverse acoustic modes at the X and L points of the Brillouin zone, negative Gruneisen parameters, negative thermal expansion and anomalous acoustic attenuation. In an attempt to understand these properties, a lattice dynamical model employing long range, nonlocal, dipole-dipole interactions was developed. Analytic expression for the Gruneisen parameters of several modes are presented. These expressions explain how the negative Gruneisen parameters arise. This model is applied to the calculation of the thermal expansion of silicon from 5K to 1700K. The thermoelastic contribution to the acoustic attenuation of silicon is computed from 1 to 300 K. Strong attenuation anomalies associated with negative thermal expansion are found in the vicinity of 17K and 125K.

  1. Interfacial Characteristics of TiN Coatings on SUS304 and Silicon Wafer Substrates with Pulsed Laser Thermal Shock

    International Nuclear Information System (INIS)

    Seo, Nokun; Jeon, Seol; Choi, Youngkue; Shin, Hyun-Gyoo; Lee, Heesoo; Jeon, Min-Seok

    2014-01-01

    TiN coatings prepared on different substrates that had different coefficients of thermal expansion were subjected to pulsed laser thermal shock and observed by using FIB milling to compare the deterioration behaviors. TiN coating on SUS304, which had a larger CTE (⁓17.3 × 10 - 6 /℃) than the coating was degraded with pores and cracks on the surface and showed significant spalling of the coating layer over a certain laser pulses. TiN coating on silicon wafer with a smaller CTE value, ⁓4.2 × 10‒6 /℃, than the coating exhibited less degradation of the coating layer at the same ablation condition. Cracks propagated at the interface were observed in the coating on the silicon wafer, which induced a compressive stress to the coating. The coating on the SUS304 showed less interface cracks while the tensile stress was applied to the coating. Delamination of the coating layer related to the intercolumnar cracks at the interface was observed in both coatings through bright-field TEM analysis.

  2. Investigating the Effect of Thermal Annealing Process on the Photovoltaic Performance of the Graphene-Silicon Solar Cell

    Directory of Open Access Journals (Sweden)

    Lifei Yang

    2015-01-01

    Full Text Available Graphene-silicon (Gr-Si Schottky solar cell has attracted much attention recently as promising candidate for low-cost photovoltaic application. For the fabrication of Gr-Si solar cell, the Gr film is usually transferred onto the Si substrate by wet transfer process. However, the impurities induced by this process at the graphene/silicon (Gr/Si interface, such as H2O and O2, degrade the photovoltaic performance of the Gr-Si solar cell. We found that the thermal annealing process can effectively improve the photovoltaic performance of the Gr-Si solar cell by removing these impurities at the Gr/Si interface. More interestingly, the photovoltaic performance of the Gr-Si solar cell can be improved, furthermore, when exposed to air environment after the thermal annealing process. Through investigating the characteristics of the Gr-Si solar cell and the properties of the Gr film (carrier density and sheet resistance, we point out that this phenomenon is caused by the natural doping effect of the Gr film.

  3. Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

    Science.gov (United States)

    Mondon, A.; Wang, D.; Zuschlag, A.; Bartsch, J.; Glatthaar, M.; Glunz, S. W.

    2014-12-01

    In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel-silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide a continuous nickel silicide of greater depth, polycrystalline modification and expected phase according to thermal budget is formed. Information about the nature of silicide growth on typical solar cell surfaces could be obtained from silicide phase and geometric observations, which were supported by FIB tomography. The theory of isotropic NiSi growth and orientation dependent NiSi2 growth was derived. By this, a very well performing low-cost metallization for silicon solar cells has been brought an important step closer to industrial introduction.

  4. Simulation of thermal properties of the silicon detector modules in ATLAS

    CERN Document Server

    Duerdoth, I P; Yuldashev, B S

    2002-01-01

    The temperature distribution and power flow from cell on the Silicon Module of the Forward Semiconductor Tracker in the ATLAS experiment have been simulated for irradiated detector. Power generated by conduction was compared for the modules with one and two cooling points. To obtain an optimal cooling temperature, the temperature of the hottest cell was plotted against power on the silicon module. The analysis of the approximation function and values for the critical power for each cooling temperature are presented. The optimal value of the cooling temperature occurred to be 260 K. (author)

  5. The neutron silicon lens. An update of the thermal neutron lens results

    International Nuclear Information System (INIS)

    Johnson, M.W.; Daymond, M.R.

    2001-01-01

    This paper introduces the concept of the Neutron Silicon Lens (NSL) and provides and update on the experimental results achieved to date. The NSL design is a cylindrical neutron lens based on the use of multiple neutron mirrors supported and separated by silicon wafers. Such lenses would have many applications in both the primary and scattered beams on neutron instruments, and would lead to immediate improvements where the sample to be illuminated is small, as in high pressure or engineering strain scanning instruments. (author)

  6. The neutron silicon lens. An update of the thermal neutron lens results

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, M.W.; Daymond, M.R. [Rutherford Appleton Laboratory, Chilton, Didcot, Oxfordshire (United Kingdom)

    2001-03-01

    This paper introduces the concept of the Neutron Silicon Lens (NSL) and provides and update on the experimental results achieved to date. The NSL design is a cylindrical neutron lens based on the use of multiple neutron mirrors supported and separated by silicon wafers. Such lenses would have many applications in both the primary and scattered beams on neutron instruments, and would lead to immediate improvements where the sample to be illuminated is small, as in high pressure or engineering strain scanning instruments. (author)

  7. Silicon isotope study of thermal springs in Jiaodong Region,Shandong Province

    Institute of Scientific and Technical Information of China (English)

    徐跃通; 李红梅; 冯海霞; 周晨; 吴元芳; 张邦花

    2001-01-01

    Based on δ30Si and δ32Si isotope geochemistry, the origin and evolutionary mechanism of thermal springs in Jiaodong region are studied. The mean value of δ30Si of dissolved silica of thermal spring water in Jiaodong is 0.1‰. Thermal spring water ages using δ32Si dating method range from 387a to 965a.

  8. Impact of Total Ionizing Dose Radiation Testing and Long-Term Thermal Cycling on the Operation of CMF20120D Silicon Carbide Power MOSFET

    Science.gov (United States)

    Patterson, Richard L.; Scheidegger, Robert J.; Lauenstein, Jean-Marie; Casey, Megan; Scheick, Leif; Hammoud, Ahmad

    2013-01-01

    Power systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed.

  9. Effect of Surfactants and Manufacturing Methods on the Electrical and Thermal Conductivity of Carbon Nanotube/Silicone Composites

    Directory of Open Access Journals (Sweden)

    Martina Hřibová

    2012-11-01

    Full Text Available The effect of ionic surfactants and manufacturing methods on the separation and distribution of multi-wall carbon nanotubes (CNTs in a silicone matrix are investigated. The CNTs are dispersed in an aqueous solution of the anionic surfactant dodecylbenzene sulfonic acid (DBSA, the cationic surfactant cetyltrimethylammonium bromide (CTAB, and in a DBSA/CTAB surfactant mixture. Four types of CNT-based composites of various concentrations from 0 to 6 vol.% are prepared by simple mechanical mixing and sonication. The morphology, electrical and thermal conductivity of the CNT-based composites are analyzed. The incorporation of both neat and modified CNTs leads to an increase in electrical and thermal conductivity. The dependence of DC conductivity versus CNT concentration shows percolation behaviour with a percolation threshold of about 2 vol.% in composites with neat CNT. The modification of CNTs by DBSA increases the percolation threshold to 4 vol.% due to the isolation/separation of individual CNTs. This, in turn, results in a significant decrease in the complex permittivity of CNT–DBSA-based composites. In contrast to the percolation behaviour of DC conductivity, the concentration dependence of thermal conductivity exhibits a linear dependence, the thermal conductivity of composites with modified CNTs being lower than that of composites with neat CNTs. All these results provide evidence that the modification of CNTs by DBSA followed by sonication allows one to produce composites with high homogeneity.

  10. Effect of surfactants and manufacturing methods on the electrical and thermal conductivity of carbon nanotube/silicone composites.

    Science.gov (United States)

    Vilčáková, Jarmila; Moučka, Robert; Svoboda, Petr; Ilčíková, Markéta; Kazantseva, Natalia; Hřibová, Martina; Mičušík, Matej; Omastová, Mária

    2012-11-05

    The effect of ionic surfactants and manufacturing methods on the separation and distribution of multi-wall carbon nanotubes (CNTs) in a silicone matrix are investigated. The CNTs are dispersed in an aqueous solution of the anionic surfactant dodecylbenzene sulfonic acid (DBSA), the cationic surfactant cetyltrimethylammonium bromide (CTAB), and in a DBSA/CTAB surfactant mixture. Four types of CNT-based composites of various concentrations from 0 to 6 vol.% are prepared by simple mechanical mixing and sonication. The morphology, electrical and thermal conductivity of the CNT-based composites are analyzed. The incorporation of both neat and modified CNTs leads to an increase in electrical and thermal conductivity. The dependence of DC conductivity versus CNT concentration shows percolation behaviour with a percolation threshold of about 2 vol.% in composites with neat CNT. The modification of CNTs by DBSA increases the percolation threshold to 4 vol.% due to the isolation/separation of individual CNTs. This, in turn, results in a significant decrease in the complex permittivity of CNT–DBSA-based composites. In contrast to the percolation behaviour of DC conductivity, the concentration dependence of thermal conductivity exhibits a linear dependence, the thermal conductivity of composites with modified CNTs being lower than that of composites with neat CNTs. All these results provide evidence that the modification of CNTs by DBSA followed by sonication allows one to produce composites with high homogeneity.

  11. Positron annihilation spectroscopy in defects of semiconductors

    International Nuclear Information System (INIS)

    Fujinami, Masanori

    2002-01-01

    Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 18 cm -3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 15 cm -2 ) silicon and oxygen-implanted (180 keV, 2x10 15 cm -2 ) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V 6 O 2 at 600degC and V 10 O 6 at 800degC. (S.Y.)

  12. Thermally Stable and Electrically Conductive, Vertically Aligned Carbon Nanotube/Silicon Infiltrated Composite Structures for High-Temperature Electrodes.

    Science.gov (United States)

    Zou, Qi Ming; Deng, Lei Min; Li, Da Wei; Zhou, Yun Shen; Golgir, Hossein Rabiee; Keramatnejad, Kamran; Fan, Li Sha; Jiang, Lan; Silvain, Jean-Francois; Lu, Yong Feng

    2017-10-25

    Traditional ceramic-based, high-temperature electrode materials (e.g., lanthanum chromate) are severely limited due to their conditional electrical conductivity and poor stability under harsh circumstances. Advanced composite structures based on vertically aligned carbon nanotubes (VACNTs) and high-temperature ceramics are expected to address this grand challenge, in which ceramic serves as a shielding layer protecting the VACNTs from the oxidation and erosive environment, while the VACNTs work as a conductor. However, it is still a great challenge to fabricate VACNT/ceramic composite structures due to the limited diffusion of ceramics inside the VACNT arrays. In this work, we report on the controllable fabrication of infiltrated (and noninfiltrated) VACNT/silicon composite structures via thermal chemical vapor deposition (CVD) [and laser-assisted CVD]. In laser-assisted CVD, low-crystalline silicon (Si) was quickly deposited at the VACNT subsurfaces/surfaces followed by the formation of high-crystalline Si layers, thus resulting in noninfiltrated composite structures. Unlike laser-assisted CVD, thermal CVD activated the precursors inside and outside the VACNTs simultaneously, which realized uniform infiltrated VACNT/Si composite structures. The growth mechanisms for infiltrated and noninfiltrated VACNT/ceramic composites, which we attributed to the different temperature distributions and gas diffusion mechanism in VACNTs, were investigated. More importantly, the as-farbicated composite structures exhibited excellent multifunctional properties, such as excellent antioxidative ability (up to 1100 °C), high thermal stability (up to 1400 °C), good high velocity hot gas erosion resistance, and good electrical conductivity (∼8.95 Sm -1 at 823 K). The work presented here brings a simple, new approach to the fabrication of advanced composite structures for hot electrode applications.

  13. Design and Characterization of a Three-Dimensional Positron Annihilation Spectroscopy System Using a Low-Energy Positron Beam

    Science.gov (United States)

    2012-03-22

    Technique Applied to Measure Oxygen -Atom Defects in 6H Silicon Carbide”. 2010. [31] Y. C. Jean , P. E. Mallon and D. M. Schrader. Principles and Applications...that result in β+ emission, by photon interactions with nuclei and subsequent pair production, or by β+ decays from radioactive isotopes made by...reactions for creating positrons [7], some of which are used to to create radioactive isotopes that β+ decay. Regardless of the positron source, positrons

  14. Positron beam studies of transients in semiconductors

    International Nuclear Information System (INIS)

    Beling, C.D.; Ling, C.C.; Cheung, C.K.; Naik, P.S.; Zhang, J.D.; Fung, S.

    2006-01-01

    Vacancy-sensing positron deep level transient spectroscopy (PDLTS) is a positron beam-based technique that seeks to provide information on the electronic ionization levels of vacancy defects probed by the positron through the monitoring of thermal transients. The experimental discoveries leading to the concept of vacancy-sensing PDLTS are first reviewed. The major problem associated with this technique is discussed, namely the strong electric fields establish in the near surface region of the sample during the thermal transient which tend to sweep positrons into the contact with negligible defect trapping. New simulations are presented which suggest that under certain conditions a sufficient fraction of positrons may be trapped into ionizing defects rendering PDLTS technique workable. Some suggestions are made for techniques that might avoid the problematic electric field problem, such as optical-PDLTS where deep levels are populated using light and the use of high forward bias currents for trap filling

  15. Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

    International Nuclear Information System (INIS)

    Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

    2006-01-01

    Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

  16. Silicon Cold Plate for CubeSat/SmallSat Thermal Control, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The development of advanced small spacecraft with increased capability and performance requires new technologies and approaches to thermal management. Newer and more...

  17. The fraction of substitutional boron in silicon during ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Caturla, M.J.; Johnson, M.D.; Diaz de la Rubia, T.

    1998-01-01

    We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics

  18. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

    KAUST Repository

    Hussain, Aftab M.

    2013-08-16

    We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Preparation and characterization of flame retardant n-hexadecane/silicon dioxide composites as thermal energy storage materials.

    Science.gov (United States)

    Fang, Guiyin; Li, Hui; Chen, Zhi; Liu, Xu

    2010-09-15

    Flame retardant n-hexadecane/silicon dioxide (SiO(2)) composites as thermal energy storage materials were prepared using sol-gel methods. In the composites, n-hexadecane was used as the phase change material for thermal energy storage, and SiO(2) acted as the supporting material that is fire resistant. In order to further improve flame retardant property of the composites, the expanded graphite (EG) was added in the composites. Fourier transformation infrared spectroscope (FT-IR), X-ray diffractometer (XRD) and scanning electronic microscope (SEM) were used to determine chemical structure, crystalloid phase and microstructure of flame retardant n-hexadecane/SiO(2) composites, respectively. The thermal properties and thermal stability were investigated by a differential scanning calorimeter (DSC) and a thermogravimetric analysis apparatus (TGA), respectively. The SEM results showed that the n-hexadecane was well dispersed in the porous network of the SiO(2). The DSC results indicated that the melting and solidifying latent heats of the composites are 147.58 and 145.10 kJ/kg when the mass percentage of the n-hexadecane in the composites is 73.3%. The TGA results showed that the loading of the EG increased the charred residue amount of the composites at 700 degrees C, contributing to the improved thermal stability of the composites. It was observed from SEM photographs that the homogeneous and compact charred residue structure after combustion improved the flammability of the composites. Copyright 2010 Elsevier B.V. All rights reserved.

  20. Role of fluttering dislocations in the thermal interface resistance between a silicon crystal and plastic solid 4He

    Science.gov (United States)

    Amrit, Jay; Ramiere, Aymeric; Volz, Sebastian

    2018-01-01

    A quantum solid (solid 4He) in contact with a classical solid defines a new class of interfaces. In addition to its quantum nature, solid 4He is indeed a very plastic medium. We examine the thermal interface resistance upon solidification of superfluid 4He in contact with a silicon crystal surface (111) and show that dislocations play a crucial role in the thermal interface transport. The growth of solid 4He and the measurements are conducted at the minimum of the melting curve of helium (0.778 K and ˜25 bar ). The results display a first-order transition in the Kapitza resistance from a value of RK ,L=(80 ±8 ) c m2K /W at a pressure of 24.5 bar to a value of RK ,S=(41.7 ±8 ) c m2K /W after the formation of solid helium at ˜25.2 bar . The drop in RK ,S is only of a factor of ˜2 , although transverse phonon modes in solid 4He now participate in heat transmission at the interface. We provide an explanation for the measured RK ,S by considering the interaction of thermal phonons with vibrating dislocations in solid 4He. We demonstrate that this mechanism, also called fluttering, induces a thermal resistance RF l∝NdT-6 , where T is the temperature and Nd is the density of dislocations. We estimate that for dislocation densities on the order of ˜107c m-2 , RF l predominates over the boundary resistance RK ,S. These fundamental findings shed light on the role of dislocations and provide a quantitative explanation for previous experiments which showed no measurable change in the Kapitza resistance between Cu and superfluid 4He upon solidification of the latter. This demonstrates the possibility of using dislocations as an additional means to tailor thermal resistances at interfaces, formed especially with a plastic material.

  1. Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit.

    Science.gov (United States)

    Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V

    2014-05-01

    We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.

  2. Thermal tuning of a silicon photonic crystal cavity infilled with an elastomer

    NARCIS (Netherlands)

    Erdamar, A.K.; Van Leest, M.M.; Picken, S.J.; Caro, J.

    2011-01-01

    Thermal tuning of the transmission of an elastomer infilled photonic crystal cavity is studied. An elastomer has a thermal expansion-induced negative thermo-optic coefficient that leads to a strong decrease of the refractive index upon heating. This property makes elastomer highly suitable for

  3. Stress hysteresis during thermal cycling of plasma-enhanced chemical vapor deposited silicon oxide films

    Science.gov (United States)

    Thurn, Jeremy; Cook, Robert F.

    2002-02-01

    The mechanical response of plasma-enhanced chemical vapor deposited SiO2 to thermal cycling is examined by substrate curvature measurement and depth-sensing indentation. Film properties of deposition stress and stress hysteresis that accompanied thermal cycling are elucidated, as well as modulus, hardness, and coefficient of thermal expansion. Thermal cycling is shown to result in major plastic deformation of the film and a switch from a compressive to a tensile state of stress; both athermal and thermal components of the net stress alter in different ways during cycling. A mechanism of hydrogen incorporation and release from as-deposited silanol groups is proposed that accounts for the change in film properties and state of stress.

  4. Structural, thermal and optical behavior of 84 MeV oxygen and 120 MeV silicon ions irradiated PES

    International Nuclear Information System (INIS)

    Samra, Kawaljeet Singh; Thakur, Sonika; Singh, Lakhwant

    2011-01-01

    In order to study structural, thermal and optical behavior, thin flat samples of polyethersulfone were irradiated with oxygen and silicon ions. The changes in properties were analyzed using different techniques viz: X-ray diffraction, thermo-gravimetric analysis, Fourier transform infrared, UV-visible and photoluminescence spectroscopy. A noticeable increase in the intensity of X-ray diffraction peaks was observed after irradiation with 84 MeV oxygen ions at low and medium fluences, which may be attributed to radiation-induced cross-linking in polymer. Fourier transform infrared and thermo-gravimetric analysis corroborated the results of X-ray diffraction analysis. No noticeable change in the Fourier transform infrared spectra of oxygen ion irradiated polyethersulfone were observed even at the highest fluence of 1 x 10 13 ions cm -2 , but after irradiation with silicon ions, a reduction in intensity of almost all characteristic bands was revealed. An increase in the activation energy of decomposition of polyethersulfone was observed after irradiation with 84 MeV oxygen ions up to medium fluences but degradation was revealed at higher fluences. Similar trends were observed by photoluminescence analysis.

  5. A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation

    International Nuclear Information System (INIS)

    Hazra, Purnima; Jit, S.

    2014-01-01

    This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet (UV) wavelength region. In this work, silicon nanowire arrays were prepared on p-type (100)-oriented Si substrate by an electroless metal deposition and etching method with the help of ultrasonication. After that, catalyst-free deposition of zinc oxide (ZnO) nanowires on a silicon nanowire (SiNW) array substrate was done by utilizing a simple and cost-effective thermal evaporation technique without using a buffer layer. The SEM and XRD techniques are used to show the quality of the as-grown ZnO nanowire film. The junction properties of the diode are evaluated by measuring current—voltage and capacitance—voltage characteristics. The diode has a well-defined rectifying behavior with a rectification ratio of 190 at ±2 V, turn-on voltage of 0.5 V, and barrier height is 0.727 eV at room temperature under dark conditions. The photodetection parameters of the diode are investigated in the bias voltage range of ±2 V. The diode shows responsivity of 0.8 A/W at a bias voltage of 2 V under UV illumination (wavelength = 365 nm). The characteristics of the device indicate that it can be used for UV detection applications in nano-optoelectronic and photonic devices. (semiconductor devices)

  6. Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

    International Nuclear Information System (INIS)

    Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

    2015-01-01

    The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

  7. Reflectance improvement by thermal annealing of sputtered Ag/ZnO back reflectors in a-Si:H thin film silicon solar cells

    DEFF Research Database (Denmark)

    Haug, Franz-Josef; Söderström, Karin; Pahud, Céline

    2011-01-01

    Silver can be used as the back contact and reflector in thin film silicon solar cells. When deposited on textured substrates, silver films often exhibit reduced reflectance due to absorption losses by the excitation of surface plasmon resonances. We show that thermal annealing of the silver back...

  8. The electrical and thermal properties of sodium sulfate mixed with lithium sulfate, yttrium sulfate, and silicon dioxide

    International Nuclear Information System (INIS)

    Imanaka, N.; Yamaguchi, Y.; Adachi, G.; Shiokawa, J.

    1986-01-01

    Sodium sulfate mixed with lithium sulfate, yttrium sulfate, and silicon dioxide was prepared. The thermal and electrical properties of its phases were investigated. The Na 2 SO 4 -Li 2 SO 4 -Y 2 (SO 4 ) 3 SiO 2 samples are similar to the Na 2 SO 4 -I phase (a high temperature phase), which is appreciably effective for Na + ionic conduction. Phase transformation was considerably suppressed by mixing. Electromotive force (EMF) was measured, using Na 2 SO 4 -Li 2 SO 4 -Y 2 (SO 4 ) 3 -SiO 2 as a solid electrolyte, by constructing an SO 2 gas concentration cell. The measured EMF's at 823 and 773 K were in fairly good accordance with the calculated EMF's for inlet SO 2 gas concentration between 30 ppm and 1%, and 500 ppm and 0.5% respectively

  9. Investigation of Near-Surface Defects Induced by Spike Rapid Thermal Annealing in c-SILICON Solar Cells

    Science.gov (United States)

    Liu, Guodong; Ren, Pan; Zhang, Dayong; Wang, Weiping; Li, Jianfeng

    2016-01-01

    The defects induced by a spike rapid thermal annealing (RTA) process in crystalline silicon (c-Si) solar cells were investigated by the photoluminescence (PL) technique and the transmission electron microscopy (TEM), respectively. Dislocation defects were found to form in the near-surface junction region of the monocrystalline Si solar cell after a spike RTA process was performed at 1100∘C. Photo J-V characteristics were measured on the Si solar cell before and after the spike RTA treatments to reveal the effects of defects on the Si cell performances. In addition, the Silvaco device simulation program was used to study the effects of defects density on the cell performances by fitting the experimental data of RTA-treated cells. The results demonstrate that there was an obvious degradation in the Si solar cell performances when the defect density after the spike RTA treatment was above 1×1013cm-3.

  10. Analysis of asymmetric resonance response of thermally excited silicon micro-cantilevers for mass-sensitive nanoparticle detection

    Science.gov (United States)

    Bertke, Maik; Hamdana, Gerry; Wu, Wenze; Suryo Wasisto, Hutomo; Uhde, Erik; Peiner, Erwin

    2017-06-01

    In this paper, the asymmetric resonance frequency (f 0) responses of thermally in-plane excited silicon cantilevers for a pocket-sized, cantilever-based airborne nanoparticle detector (Cantor) are analysed. By measuring the shift of f 0 caused by the deposition of nanoparticles (NPs), the cantilevers are used as a microbalance. The cantilever sensors are low cost manufactured from silicon by bulk-micromachining techniques and contain an integrated p-type heating actuator and a sensing piezoresistive Wheatstone bridge. f 0 is tracked by a homemade phase-locked loop (PPL) for real-time measurements. To optimize the sensor performance, a new cantilever geometry was designed, fabricated and characterized by its frequency responses. The most significant characterisation parameters of our application are f 0 and the quality factor (Q), which have high influences on sensitivity and efficiency of the NP detector. Regarding the asymmetric resonance signal, a novel fitting function based on the Fano resonance replacing the conventionally used function of the simple harmonic oscillator and a method to calculate Q by its fitting parameters were developed for a quantitative evaluation. To obtain a better understanding of the resonance behaviours, we analysed the origin of the asymmetric line shapes. Therefore, we compared the frequency response of the on-chip thermal excitation with an external excitation using an in-plane piezo actuator. In correspondence to the Fano effect, we could reconstruct the measured resonance curves by coupling two signals with constant amplitude and the expected signal of the cantilever, respectively. Moreover, the phase of the measurement signal can be analysed by this method, which is important to understand the locking process of the PLL circuit. Besides the frequency analysis, experimental results and calibration measurements with different particle types are presented. Using the described analysis method, decent results to optimize a next

  11. Importance of non-local electron-positron correlations for positron annihilation characteristics in solids

    International Nuclear Information System (INIS)

    Rubaszek, A.

    2001-01-01

    Several methods to describe the electron-positron (e-p) correlation effects are used in calculations of positron annihilation characteristics in solids. The weighted density approximation (WDA), giving rise to the non-local, state-selective e-p correlation functions, is applied to calculate positron annihilation rates and e-p momentum densities in a variety of metals and silicon. The WDA results are compared to the results of other methods such as the independent particle model, local density approximation, generalised gradient approximation, and also to experiments. The importance of non-locality and state-dependence of the e-p correlation functions is discussed. (orig.)

  12. Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide

    International Nuclear Information System (INIS)

    Poudel, P.R.; Poudel, P.P.; Paramo, J.A.; Strzhemechny, Y.M.; Rout, B.; McDaniel, F.D.

    2015-01-01

    The structural and optical properties of carbon nanoclusters formed in thermally grown silicon dioxide film via the ion beam synthesis process have been investigated. A low-energy (70 keV) carbon ion beam (C - ) at a fluence of 3 x 10 17 atoms/cm 2 was used for implantation into a thermally grown silicon dioxide layer (500 nm thick) on a Si (100) wafer. Several parts of the implanted samples were subsequently annealed in a gas mixture (4 % H 2 + 96 % Ar) at 900 C for different time periods. The as-implanted and annealed samples were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). The carbon ion implantation depth profile was simulated using a widely used Monte Carlo-based simulation code SRIM-2012. Additionally, the elemental depth profile of the implanted carbon along with host elements of silicon and oxygen were simulated using a dynamic ion-solid interaction code T-DYN, which incorporates the effects of the surface sputtering and gradual change in the elemental composition in the implanted layers due to high-fluence ion implantation. The elemental depth profile obtained from the XPS measurements matches closely to the T-DYN predictions. Raman measurements indicate the formation of graphitic phases in the annealed samples. The graphitic peak (G-peak) was found to be increased with the annealing time duration. In the sample annealed for 10 min, the sizes of the carbon nanoclusters were found to be 1-4 nm in diameter using TEM. The PL measurements at room temperature using a 325-nm laser show broad-band emissions in the ultraviolet to visible range in the as-implanted sample. Intense narrow bands along with the broad bands were observed in the annealed samples. The defects present in the as-grown samples along with carbon ion-induced defect centers in the as-implanted samples are the main contributors to the observed

  13. Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Poudel, P.R. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States); Intel Corporation, Rio Rancho, NM (United States); Poudel, P.P. [University of Kentucky, Department of Chemistry, Lexington, KY (United States); Paramo, J.A.; Strzhemechny, Y.M. [Texas Christian University, Department of Physics and Astronomy, Fort Worth, TX (United States); Rout, B. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States); University of North Texas, Center for Advanced Research and Technology, Denton, TX (United States); McDaniel, F.D. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States)

    2014-09-18

    The structural and optical properties of carbon nanoclusters formed in thermally grown silicon dioxide film via the ion beam synthesis process have been investigated. A low-energy (70 keV) carbon ion beam (C{sup -}) at a fluence of 3 x 10{sup 17} atoms/cm{sup 2} was used for implantation into a thermally grown silicon dioxide layer (500 nm thick) on a Si (100) wafer. Several parts of the implanted samples were subsequently annealed in a gas mixture (4 % H{sub 2} + 96 % Ar) at 900 C for different time periods. The as-implanted and annealed samples were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). The carbon ion implantation depth profile was simulated using a widely used Monte Carlo-based simulation code SRIM-2012. Additionally, the elemental depth profile of the implanted carbon along with host elements of silicon and oxygen were simulated using a dynamic ion-solid interaction code T-DYN, which incorporates the effects of the surface sputtering and gradual change in the elemental composition in the implanted layers due to high-fluence ion implantation. The elemental depth profile obtained from the XPS measurements matches closely to the T-DYN predictions. Raman measurements indicate the formation of graphitic phases in the annealed samples. The graphitic peak (G-peak) was found to be increased with the annealing time duration. In the sample annealed for 10 min, the sizes of the carbon nanoclusters were found to be 1-4 nm in diameter using TEM. The PL measurements at room temperature using a 325-nm laser show broad-band emissions in the ultraviolet to visible range in the as-implanted sample. Intense narrow bands along with the broad bands were observed in the annealed samples. The defects present in the as-grown samples along with carbon ion-induced defect centers in the as-implanted samples are the main

  14. Chemically and Thermally Stable High Energy Density Silicone Composites, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Thermal energy storage systems with 300 -- 1000 kJ/kg energy density through either phase changes or chemical heat absorption are sought by NASA. This proposed...

  15. Non-negligible Contributions to Thermal Conductivity From Localized Modes in Amorphous Silicon Dioxide

    OpenAIRE

    Lv, Wei; Henry, Asegun

    2016-01-01

    Thermal conductivity is an important property for almost all applications involving heat transfer, ranging from energy and microelectronics to food processing and textiles. The theory and modeling of crystalline materials is in some sense a solved problem, where one can now calculate the thermal conductivity of any crystalline line compound from first principles [1,2] using expressions based on the phonon gas model (PGM)[3,4]. However, modeling of amorphous materials still has many open quest...

  16. Growth and structure of rapid thermal silicon oxides and nitroxides studied by spectroellipsometry and Auger electron spectroscopy

    Science.gov (United States)

    Gonon, N.; Gagnaire, A.; Barbier, D.; Glachant, A.

    1994-11-01

    Rapid thermal oxidation of Czochralski-grown silicon in either O2 or N2O atmospheres have been studied using spectroellipsometry and Auger electron spectroscopy. Multiwavelength ellipsometric data were processed in order to separately derive the thickness and refractive indexes of rapid thermal dielectrics. Results revealed a significant increase of the mean refractive index as the film thickness falls below 20 nm for both O2 or N2O oxidant species. A multilayer structure including an about 0.3-nm-thick interfacial region of either SiO(x) or nitroxide in the case of O2 and N2O growth, respectively, followed by a densified SiO2 layer, was found to accurately fit the experimental data. The interfacial region together with the densified state of SiO2 close to the interface suggest a dielectric structure in agreement with the continuous random network model proposed for classical thermal oxides. Auger electron spectroscopy analysis confirmed the presence of noncrystalline Si-Si bonds in the interfacial region, mostly in the case of thin oxides grown in O2. It was speculated that the initial fast growth regime was due to a transient oxygen supersaturation in the interfacial region. Besides, the self-limiting growth in N2O was confirmed and explained in agreement with several recently published data, by the early formation of a very thin nitride or oxynitride membrane in the highly densified oxide beneath the interface. The beneficial effect of direct nitrogen incorporation by rapid thermal oxidation in N2O instead of O2 for the electrical behavior of metal-oxide-semiconductor capacitors is likely a better SiO2/Si lattice accommodation through the reduction of stresses and Si-Si bonds in the interfacial region of the dielectric.

  17. A new family of thermal donors generated around 450 °C in phosphorus-doped Czochralski silicon

    Science.gov (United States)

    Kamiura, Yoichi; Hashimoto, Fumio; Yoneta, Minoru

    1989-01-01

    We have discovered a new family of oxygen-related double donors [new thermal donors (NTD's)] generated around 450 °C in phosphorus-doped Czochralski silicon by combining deep-level transient spectroscopy with Hall measurements. This new family was well distinguished from the normal family of thermal donors (TD's) currently studied so far. Our results have shown that both families of thermal donors exhibit qualitatively the same kinetic behavior. Namely, as the annealing time increases, their ionization energy of levels continuously decrease with their densities increasing until the maxima and then become constant with their densities decreasing. However, there are significantly quantitative differences between the both families; NTD's have shallower levels, considerably smaller generation rates, and higher thermal stability than TD's. Sufficiently prolonged annealing for more than 105 min around 450 °C or short donor-killing annealing for 20 min at 650 °C completely annihilates TD's, leaving only NTD's, of which the most stable and therefore most shallow species have been suggested by our Hall measurements to have donor levels at 0.04 and 0.09 eV below the conduction-band edge. The density of interstitial oxygen still continues to decrease even after prolonged annealing for more than 105 min, where NTD's are present in a stable condition in a concentration of 1×1015 cm-3. NTD's may correlate with the NL10 electron paramagnetic resonance center because of similarities in their generation kinetics. We have suggested a hypothesis that NTD's have similar defect structures as TD's and that an unknown nucleus involved in the core of NTD's plays an essential role in lowering their ionization energy of levels and generation rates and also in stabilizing their donor activity.

  18. High thermal conductivity of graphite fiber silicon carbide composites for fusion reactor application

    International Nuclear Information System (INIS)

    Snead, L.L.; Balden, M.; Causey, R.A.; Atsumi, H.

    2002-01-01

    The benefits of using CVI SiC/graphite fiber composites as low tritium retaining, high thermal conductivity composites for fusion applications are presented. Three-dimensional woven composites have been chemically vapor infiltrated with SiC and their thermophysical properties measured. One material used an intermediate grade graphite fiber in all directions (Amoco P55) while a second material used very high thermal conductive fiber (Amoco K-1100) in the high fiber density direction. The overall void was less than 20%. Strength as measured by four-point bending was comparable to those of SiC/SiC composite. The room temperature thermal conductivity in the high conductivity direction was impressive for both materials, with values >70 W/m K for the P-55 and >420 W/m K for the K-1100 variant. The thermal conductivity was measured as a function of temperature and exceeds the highest thermal conductivity of CVD SiC currently available at fusion relevant temperatures (>600 deg. C). Limited data on the irradiation-induced degradation in thermal conductivity is consistent with carbon fiber composite literature

  19. Study of defects created in silicon during thermal annealings - Correlation with the presence of oxygen

    International Nuclear Information System (INIS)

    Olivier, Michel

    1975-01-01

    Defects generation and precipitation phenomena in Czochralski silicon crystals annealed ten of hours at 1000 C have been observed. The defects (perfect dislocation loops emitted by semi-coherent precipitates, Frank loops in correlation with coherent precipitates) are studied by Transmission Electron Microscopy, X-Ray Topography and chemical etching. The generation of defects is connected to the precipitation of interstitial oxygen as it is shown by studying the infrared absorption at 9 μm. We present a lot of experimental results which indicates that the precipitates are SiO 2 clusters; in particular, we show that this hypothesis can explain the presence, after annealing, of an infrared absorption band at 8,2 μm. Some results on Czochralski silicon crystals annealed at 1150 deg. C and 1250 deg. C are then presented. In particular, X-Ray Topography studies show the presence of large (∼100 μm) Frank loops which seem connected to oxygen precipitation. (author) [fr

  20. Sub-10 nm structures on silicon by thermal dewetting of platinum

    International Nuclear Information System (INIS)

    Strobel, Sebastian; Kirkendall, Christopher; Chang, Jae-Byum; Berggren, Karl K

    2010-01-01

    A study of the dewetting behavior of platinum-thin-films on silicon was carried out to determine how variation of dewetting parameters affects the evolution of film morphology and to pinpoint which parameters yielded the smallest, most circular features. Platinum film thickness as well as dewetting time and temperature were varied and the film morphology characterized by means of scanning electron microscopy (SEM) analysis. Two different pathways of dewetting predicted in the literature (Vrij 1966 Discuss. Faraday Soc. 42 23, Becker et al 2003 Nat. Mater. 2 59-63) were observed. Depending on the initial criteria, restructuring of the film occurred via hole or droplet formation. With increased annealing time, a transition from an intermediate network structure to separated islands occurred. In addition, the formation of multilayered films, silicide crystals and nanowires occurred for certain parameters. Nevertheless, the dewetting behavior witnessed could be related to physical processes. Droplets with a mean diameter of 9 nm were formed by using a 1.5 nm thick platinum film annealed at 800 deg. C for 30 s. To demonstrate the suitability of the annealed films for further processing, we then used the dewetted films as masks for reactive ion etching to transfer the pattern into the silicon substrate, forming tapered nanopillars.

  1. Thermal Stability of Hi-Nicalon SiC Fiber in Nitrogen and Silicon Environments

    Science.gov (United States)

    Bhatt, R. T.; Garg, A.

    1995-01-01

    The room temperature tensile strength of uncoated and two types of pyrolytic boron nitride coated (PBN and Si-rich PBN) Hi-Nicalon SiC fibers was determined after 1 to 400 hr heat treatments to 1800 C under N2 pressures of 0.1, 2, and 4 MPa, and under 0.1 Mpa argon and vacuum environments. In addition, strength stability of both uncoated and coated fibers embedded in silicon powder and exposed to 0.1 MPa N2 for 24 hrs at temperatures to 1400 C was investigated. The uncoated and both types of BN coated fibers exposed to N2 for 1 hr showed noticeable strength degradation above 1400 C and 1600 C, respectively. The strength degradation appeared independent of nitrogen pressure, time of heat treatment, and surface coatings. TEM microstructural analysis suggests that flaws created due to SiC grain growth are responsible for the strength degradation. In contact with silicon powder, the uncoated and both types of PBN coated fibers degrade rapidly above 1350 C.

  2. Positron and positronium annihilation in silica-based thin films studied by a pulsed positron beam

    International Nuclear Information System (INIS)

    Suzuki, R.; Ohdaira, T.; Kobayashi, Y.; Ito, K.; Shioya, Y.; Ishimaru, T.

    2003-01-01

    Positron and positronium annihilation in silica-based thin films has been investigated by means of measurement techniques with a monoenergetic pulsed positron beam. The age-momentum correlation study revealed that positron annihilation in thermally grown SiO 2 is basically the same as that in bulk amorphous SiO 2 while o-Ps in the PECVD grown SiCOH film predominantly annihilate with electrons of C and H at the microvoid surfaces. We also discuss time-dependent three-gamma annihilation in porous low-k films by two-dimensional positron annihilation lifetime spectroscopy

  3. PEBS - Positron Electron Balloon Spectrometer

    CERN Document Server

    von Doetinchem, P.; Kirn, T.; Yearwood, G.Roper; Schael, S.

    2007-01-01

    The best measurement of the cosmic ray positron flux available today was performed by the HEAT balloon experiment more than 10 years ago. Given the limitations in weight and power consumption for balloon experiments, a novel approach was needed to design a detector which could increase the existing data by more than a factor of 100. Using silicon photomultipliers for the readout of a scintillating fiber tracker and of an imaging electromagnetic calorimeter, the PEBS detector features a large geometrical acceptance of 2500 cm^2 sr for positrons, a total weight of 1500 kg and a power consumption of 600 W. The experiment is intended to measure cosmic ray particle spectra for a period of up to 20 days at an altitude of 40 km circulating the North or South Pole. A full Geant 4 simulation of the detector concept has been developed and key elements have been verified in a testbeam in October 2006 at CERN.

  4. Synthesis of a Novel Polyethoxysilsesquiazane and Thermal Conversion into Ternary Silicon Oxynitride Ceramics with Enhanced Thermal Stability.

    Science.gov (United States)

    Iwase, Yoshiaki; Horie, Yoji; Daiko, Yusuke; Honda, Sawao; Iwamoto, Yuji

    2017-12-05

    A novel polyethoxysilsesquiazane ([EtOSi(NH) 1.5 ] n , EtOSZ) was synthesized by ammonolysis at -78 °C of ethoxytrichlorosilane (EtOSiCl₃), which was isolated by distillation as a reaction product of SiCl₄ and EtOH. Attenuated total reflection-infra red (ATR-IR), 13 C-, and 29 Si-nuclear magnetic resonance (NMR) spectroscopic analyses of the ammonolysis product resulted in the detection of Si-NH-Si linkage and EtO group. The simultaneous thermogravimetric and mass spectrometry analyses of the EtOSZ under helium revealed cleavage of oxygen-carbon bond of the EtO group to evolve ethylene as a main gaseous species formed in-situ, which lead to the formation at 800 °C of quaternary amorphous Si-C-N with an extremely low carbon content (1.1 wt %) when compared to the theoretical EtOSZ (25.1 wt %). Subsequent heat treatment up to 1400 °C in N₂ lead to the formation of X-ray amorphous ternary Si-O-N. Further heating to 1600 °C in N₂ promoted crystallization and phase partitioning to afford Si₂N₂O nanocrystallites identified by the XRD and TEM analyses. The thermal stability up to 1400 °C of the amorphous state achieved for the ternary Si-O-N was further studied by chemical composition analysis, as well as X-ray photoelectron spectroscopy (XPS) and 29 Si-NMR spectroscopic analyses, and the results were discussed aiming to develop a novel polymeric precursor for ternary amorphous Si-O-N ceramics with an enhanced thermal stability.

  5. Optimisation of a combined transient-ion-drift/rapid thermal annealing process for copper detection in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Belayachi, A.; Heiser, T.; Schunck, J.P.; Bourdais, S.; Bloechl, P.; Huber, A.; Kempf, A

    2003-09-15

    The transient ion drift (TID) technique has been recently proposed for copper trace detection in silicon. Cu atoms may be present either in the vicinity of the Si surface or within the volume. In the latter case they are either gathered at secondary defects or form precipitates believed to be silicides. In order to become detectable by TID Cu atoms must be put into the highly mobile interstitial state. Depending on the initial configuration of the Cu/Si system different physical mechanisms may enable Cu atoms to become 'TID active'. In this work we study the Cu activation process using rapid thermal processing (RTP) in an attempt to minimise the thermal budget required to achieve a complete activation. Both, surface and volume contaminated samples are investigated. During RTP treatments the activation of surface Cu atoms is found to proceed significantly faster than during standard furnace anneal. We tentatively attribute this behaviour to the UV light exposure associated with the RTP, which may enhance the release of copper atoms from the surface. The dissolution kinetics of the Cu precipitates occurring during RTPs are found to be only limited by Cu diffusion. The RTP/TID process is used to study the low temperature reaction path of supersaturated Cu. If prior to the RTP process, Cu atoms are chemically removed from the surface or near surface region, TID measures only the residual bulk Cu atoms. Our results show that out-diffusion and near-surface precipitation are reducing mostly the copper supersaturation.

  6. Advanced diffusion system for low contamination in-line rapid thermal processing of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Biro, D.; Preu, R.; Schultz, O.; Peters, S.; Huljic, D.M.; Zickermann, D.; Schindler, R.; Luedemann, R.; Willeke, G. [Fraunhofer Institute for Solar Energy Systems ISE, Freiburg (Germany)

    2002-10-01

    A novel diffusion system for in-line rapid thermal diffusion is presented. The lamp-heated furnace has a low thermal mass and a metal free transport system based on the walking beam principle. The furnace has been used to process first solar cells with lightly and highly doped emitters respectively. Solar cells with shallow lightly doped emitters show that the emitters processed in the new device can be well passivated. Shallow emitters with sheet resistances of up to 40/sq. have been contacted successfully by means of screen printing and firing through a SiN{sub x} antireflection coating. (author)

  7. Thermal conductivity of high-porosity heavily doped biomorphic silicon carbide prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Cabezas-Rodriguez, R.; Ramirez-Rico, J.

    2012-08-01

    The electrical resistivity and thermal conductivity of high-porosity (˜52 vol %, channel-type pores) bio-SiC samples prepared from sapele wood biocarbon templates have been measured in the temperature range 5-300 K. An analysis has been made of the obtained results in comparison with the data for bio-SiC samples based on beech and eucalyptus, as well as for polycrystalline β-SiC. The conclusion has been drawn that the electrical resistivity and thermal conductivity of bio-SiC samples based on natural wood are typical of heavily doped polycrystalline β-SiC.

  8. Novel thermal donors generated in Cz silicon by prolonged annealing at 470oC

    International Nuclear Information System (INIS)

    Kamiura, Y.; Hashimoto, F.; Yoneta, M.

    1989-01-01

    A new family of shallower double donors (New TD's) than the normal family of thermal donors (TD's) currently studied has been discovered by DLTS (Deep Level Transient Spectroscopy) and Hall measurements. The both families exhibit qualitatively the same kinetic behaviors at 470 o C, but New TD's have smaller generation rates and higher thermal stability, correlating strongly with the NL10 EPR center. The hypothesis that an unknown nucleus involved in the core of New TD's plays an essential role in lowering their level ionization energies and stabilizing their donor activity is proposed to explain the results. (author) 11 refs., 6 figs

  9. Thermal properties of calorimeters with Ti/Au transition-edge sensors on silicon nitride membranes

    International Nuclear Information System (INIS)

    Ukibe, M.; Tanaka, K.; Koyanagi, M.; Morooka, T.; Pressler, H.; Ohkubo, M.; Kobayashi, N.

    2000-01-01

    We are developing X-ray microcalorimeters employing superconducting-transition-edge sensors (TESs) for relatively high operation-temperatures of an 3 He cryostat. The TESs are proximity bilayers of Ti and Au. An important thermal parameters, the thermal conductance G, of the microcalorimeters on SiN x membranes was evaluated by a simple method using R-T curves at different bias currents. It has been shown that the G value can be controlled by altering the membrane thickness and size

  10. Characterization of 1.2×1.2 mm2 silicon photomultipliers with Ce:LYSO, Ce:GAGG, and Pr:LuAG scintillation crystals as detector modules for positron emission tomography

    Science.gov (United States)

    Omidvari, N.; Sharma, R.; Ganka, T. R.; Schneider, F. R.; Paul, S.; Ziegler, S. I.

    2017-04-01

    The design of a positron emission tomography (PET) scanner is specially challenging since it should not compromise high spatial resolution, high sensitivity, high count-rate capability, and good energy and time resolution. The geometrical design of the system alongside the characteristics of the individual PET detector modules contributes to the overall performance of the scanner. The detector performance is mainly influenced by the characteristics of the photo-detector and the scintillation crystal. Although silicon photomultipliers (SiPMs) have already proven to be promising photo-detectors for PET, their performance is highly influenced by micro-cell structure and production technology. Therefore, five types of SiPMs produced by KETEK with an active area size of 1.2 × 1.2 mm2 were characterized in this study. The SiPMs differed in the production technology and had micro-cell sizes of 25, 50, 75, and 100 μm. Performance of the SiPMs was evaluated in terms of their breakdown voltage, temperature sensitivity, dark count rate, and correlated noise probability. Subsequently, energy resolution and coincidence time resolution (CTR) of the SiPMs were measured with five types of crystals, including two Ce:LYSO, two Ce:GAGG, and one Pr:LuAG. Two crystals with a geometry of 1.5 × 1.5 × 6 mm3 were available from each type. The best CTR achieved was ~ 240 ps, which was obtained with the Ce:LYSO crystals coupled to the 50 μm SiPM produced with the trench technology. The best energy resolution for the 511 keV photo-peak was ~ 11% and was obtained with the same SiPM coupled to the Ce:GAGG crystals.

  11. Characterization of 1.2×1.2 mm2 silicon photomultipliers with Ce:LYSO, Ce:GAGG, and Pr:LuAG scintillation crystals as detector modules for positron emission tomography

    International Nuclear Information System (INIS)

    Omidvari, N.; Sharma, R.; Schneider, F.R.; Ziegler, S.I.; Ganka, T.R.; Paul, S.

    2017-01-01

    The design of a positron emission tomography (PET) scanner is specially challenging since it should not compromise high spatial resolution, high sensitivity, high count-rate capability, and good energy and time resolution. The geometrical design of the system alongside the characteristics of the individual PET detector modules contributes to the overall performance of the scanner. The detector performance is mainly influenced by the characteristics of the photo-detector and the scintillation crystal. Although silicon photomultipliers (SiPMs) have already proven to be promising photo-detectors for PET, their performance is highly influenced by micro-cell structure and production technology. Therefore, five types of SiPMs produced by KETEK with an active area size of 1.2 × 1.2 mm 2 were characterized in this study. The SiPMs differed in the production technology and had micro-cell sizes of 25, 50, 75, and 100 μm. Performance of the SiPMs was evaluated in terms of their breakdown voltage, temperature sensitivity, dark count rate, and correlated noise probability. Subsequently, energy resolution and coincidence time resolution (CTR) of the SiPMs were measured with five types of crystals, including two Ce:LYSO, two Ce:GAGG, and one Pr:LuAG. Two crystals with a geometry of 1.5 × 1.5 × 6 mm 3 were available from each type. The best CTR achieved was ∼ 240 ps, which was obtained with the Ce:LYSO crystals coupled to the 50 μm SiPM produced with the trench technology. The best energy resolution for the 511 keV photo-peak was ∼ 11% and was obtained with the same SiPM coupled to the Ce:GAGG crystals.

  12. Joining of silicon carbide using interlayer with matching coefficient of thermal expansion

    International Nuclear Information System (INIS)

    Perham, T.

    1996-11-01

    The primary objective of this study is to develop a technique for joining a commercially available Silicon Carbide that gives good room temperature strength and the potential for good high temperature strength. One secondary objective is that the joining technique be adaptable to SiC f /SiC composites and/or Nickel based superalloys, and another secondary objective is that the materials provide good neutron irradiation resistance and low activation for potential application inside nuclear fusion reactors. The joining techniques studied here are: (1) reaction bonding with Al-Si/Si/SiC/C; (2) reaction/infiltration with calcium aluminum silicate; (3) ion exchange mechanism to form calcium hexaluminate (a refractory cement); and (4) oxide frit brazing with cordierite

  13. Study of a silicon photodetector thermal stabilization using a Peltier cell

    International Nuclear Information System (INIS)

    Foschi, E.; Levi, G.; Quadrani, L.; Sbarra, C.; Guandalini, C.; Zuffa, M.; Sbarra, C.

    2007-01-01

    In recent years a new type of silicon photon detection device (SiPM) has been developed by many groups. These devices have strong advantages in comparison to normal photomultipliers tubes (PMT) but, being made by an array of avalanche photo diodes operated in Geiger mode, are much more sensitive to temperature changes than standard PMTs. Typical SiPM gain, in fact, varies from 3 to 5 percent per Celsius degree. In space environment, where operative temperature can change from -40 deg.C to 50 deg.C, a definitive temperature stabilization is needed. In order to use SiPMs in space we have developed a thermoelectric model of a Peltier cell that allows us to simulate the final detector circuit assembly predicting the operative temperatures and the adsorbed powers. The characteristics of the model and the obtained results are shown. (authors)

  14. Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

    International Nuclear Information System (INIS)

    Uchida, Takafumi; Jo, Mingyu; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Takahashi, Yasuo; Fujiwara, Akira

    2015-01-01

    Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates

  15. Thermal description of hypoeutectic Al-Si-Cu alloys using silicon equivalency

    Directory of Open Access Journals (Sweden)

    Mile B. Đurđević

    2012-01-01

    Full Text Available The modeling of casting processes has remained a topic of active interest for several decades, and availability of numerous software packages on the market is a good indication of the interest that the casting industry has in this field. Most of the data used in these software packages are read or estimated from the binary or multi-component phase diagrams. Unfortunately, except for binary diagrams, many of ternary or higher order phase diagrams are still not accurate enough. Having in mind that most of the aluminum binary systems are very well established, it has been tried to transfer a multi-component system into one well known Al-Xi pseudo binary system (in this case the Al-Si phase diagram was chosen as a reference system. The new Silicon Equivalency (SiEQ algorithm expresses the amounts of major and minor alloying elements in the aluminum melts through an 'equivalent' amount of silicon. Such a system could be used to calculate several thermo-physical and solidification characteristics of multi component as cast aluminum alloys. This lends the model the ability to make predictions of solidification characteristics of cast parts, where cooling rates are slow and the solidification process has to be known in great detail in order to avoid problems in the casting. This work demonstrates how the SiEQ algorithm can be used to calculate characteristic solidification temperatures of the multi-component hypoeutectic Al-Si-Cu alloys as well as their latent heats. SA statistical analysis of the results obtained for a wide range of alloy chemical compositions shows a very good correlation with the experimental data and the SiEQ calculations.

  16. Simulation of a Positron Source for CEBAF

    International Nuclear Information System (INIS)

    S. Golge; A. Freyberger; C. Hyde-Wright

    2007-01-01

    A positron source for the 6 GeV (or the proposed 12 GeV upgrade) recirculating linacs at Jefferson Lab is presented. The proposed 100nA CW positron source has several unique characteristics; high incident beam power (100kW), 10 MeV incident electron beam energy, CW incident beam and CW production. Positron production with 10 MeV electrons has several advantages; the energy is below neutron threshold so the production target will not become activated during use and the absolute energy spread is bounded by the low incident energy. These advantages are offset by the large angular distribution of the outgoing positrons. Results of simulations of the positron production, capture, acceleration and injection into the recirculating linac are presented. Energy flow and thermal management of the production target present a challenge and are included in the simulations

  17. Thermal-Hydraulic Aspects of Changing the Nuclear Fuel-Cladding Materials from Zircaloy to Silicon Carbides

    International Nuclear Information System (INIS)

    Niceno, Bojan; Pouchon, Manuel

    2014-01-01

    The accident in Fukushima has drastically shown the drawbacks of Zircaloy claddings despite their beneficial properties in normal use. The effect of the lack of cooling and the production of hydrogen would not have been so strong if the fuel cladding had not consisted of a zirconium (or metal) alloy. International activities have been started to search for an alternative to Zircaloy, however, still on a limited basis. A project sponsored by Swissnuclear has been conducted at Paul Scherrer Institute (PSI) with the aim to close the gap in knowledge on application of silicon carbides (SiC) as potential replacement for Zircaloys as material for nuclear fuel cladding. The work was interdisciplinary, result of collaboration between different laboratories at PSI, and has focused on SiC cladding material properties, implication of its usage on neutronics and on thermal-hydraulics. This paper summarizes thermal-hydraulic aspects of changing Zircaloy for SiC as the cladding material. The change of cladding material inevitably changes the surface properties thus making a significant impact on boiling curve, and critical heat flux (CHF). Low chemical reactivity of SiC means fewer particles in the flow (less crud), which leads to fewer failures, but also decreases the CHF. Due to differences in physical properties between SiC and Zircaloys, higher brittleness of SiC in particular, might have impact on fuel-rod assembly design, which has direct influence on flow patterns and heat transfer in the fuel assembly. Higher melting (i.e. decomposition) point for SiC means that severe accident management guidelines (SAMG) should have to be re-assessed. Not only would the core degrade later than in the case of conventional fuels, but the production of hydrogen would be quite different as well. All these issues are explored in this work in two steps; first the SiC properties which may have influence on thermal-hydraulics are outlined, then each thermal-hydraulic issues is explained from

  18. Effect of van der Waals forces on thermal conductance at the interface of a single-wall carbon nanotube array and silicon

    Directory of Open Access Journals (Sweden)

    Ya Feng

    2014-12-01

    Full Text Available Molecular dynamics simulations are performed to evaluate the effect of van der Waals forces among single-wall carbon nanotubes (SWNTs on the interfacial thermal conductance between a SWNT array and silicon substrate. First, samples of SWNTs vertically aligned on silicon substrate are simulated, where both the number and arrangement of SWNTs are varied. Results reveal that the interfacial thermal conductance of a SWNT array/Si with van der Waals forces present is higher than when they are absent. To better understand how van der Waals forces affect heat transfer through the interface between SWNTs and silicon, further constructs of one SWNT surrounded by different numbers of other ones are studied, and the results show that the interfacial thermal conductance of the central SWNT increases with increasing van der Waals forces. Through analysis of the covalent bonds and vibrational density of states at the interface, we find that heat transfer across the interface is enhanced with a greater number of chemical bonds and that improved vibrational coupling of the two sides of the interface results in higher interfacial thermal conductance. Van der Waals forces stimulate heat transfer at the interface.

  19. Effects of aging on the structural, mechanical, and thermal properties of the silicone rubber current transformer insulation bushing for a 500 kV substation.

    Science.gov (United States)

    Wang, Zhigao; Zhang, Xinghai; Wang, Fangqiang; Lan, Xinsheng; Zhou, Yiqian

    2016-01-01

    In order to analyze the cracking and aging reason of the silicone rubber current transformer (CT) insulation bushing used for 8 years from a 500 kV alternating current substation, characteristics including Fourier transform infrared (FTIR) spectroscopy, mechanical properties analysis, hardness, and thermo gravimetric analysis have been carried out. The FTIR results indicated that the external surface of the silicone rubber CT insulation bushing suffered from more serious aging than the internal part, fracture of side chain Si-C bond was much more than the backbone. Mechanical properties and thermal stability results illustrated that the main aging reasons were the breakage of side chain Si-C bond and the excessive cross-linking reaction of the backbone. This study can provide valuable basis for evaluating degradation mechanism and aging state of the silicone rubber insulation bushing in electric power field.

  20. A Numerical Study on Phonon Spectral Contributions to Thermal Conduction in Silicon-on-Insulator Transistor Using Electron-Phonon Interaction Model

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Hyung-sun; Koh, Young Ha; Jin, Jae Sik [Chosun College of Science and Technology, Gwangju (Korea, Republic of)

    2017-06-15

    The aim of this study is to understand the phonon transfer characteristics of a silicon thin film transistor. For this purpose, the Joule heating mechanism was considered through the electron-phonon interaction model whose validation has been done. The phonon transport characteristics were investigated in terms of phonon mean free path for the variations in the device power and silicon layer thickness from 41 nm to 177 nm. The results may be used for developing the thermal design strategy for achieving reliability and efficiency of the silicon-on-insulator (SOI) transistor, further, they will increase the understanding of heat conduction in SOI systems, which are very important in the semiconductor industry and the nano-fabrication technology.

  1. Theoretical aspects of positrons in imperfect solids

    International Nuclear Information System (INIS)

    Puska, M.J.

    1987-01-01

    The efficient use of positron annihilation in defect studies requires a deep understanding of the basic processes of positron-imperfect solid interaction. Three stages, i.e. thermalization, trapping by a defect, and the annihilation can be separated during the evolution of the interaction. The last two processes are the most relevant ones for the positron lifetime spectroscopy and they will be discussed in detail in this review. The complete solution of the problem of a localized positron interacting with the electrons around a defect requires the simultaneous self-consistent calculation of the electronic structure and the positron state. This is in principle possible in the two component density functional theory. However, the approximation, in which the electronic structure without the positron influence is used and the electron-positron correlation effects are described by local enhancement factors, has turned out to be feasible in practice and also accurate enough in predicting positron annihilation characteristics. Moreover, a non-self-consistent electron structure is sufficient in many cases. This enables an efficient calculation method in which the positron wave function can be solved in three dimensions for arbitrary defect geometries. Enhancement models for simple metals, transition metals, and semiconductors are represented. Thereafter, applications to vacancies, vacancy clusters, and vacancy-impurity complexes are shown. The positron trapping by defects is mediated by the transfer of the positron binding energy to the solid in the form of electron-hole pairs and phonons. The trapping phenomenon is discussed in the case of metals and semiconductors. Semiconductors are especially challenging because the existence of the energy gap makes the low energy electron-hole excitations impossible and because the defects have different charge states effecting strongly on the trapping rate. (author)

  2. Thermal post-deposition treatment effects on nanocrystalline hydrogenated silicon prepared by PECVD under different hydrogen flow rates

    Energy Technology Data Exchange (ETDEWEB)

    Amor, Sana Ben, E-mail: sana.benamor1@gmail.com [Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia); University of Applied Medical Sciences of Hafr El Baten (Saudi Arabia); Meddeb, Hosny; Daik, Ridha; Othman, Afef Ben; Slama, Sonia Ben; Dimassi, Wissem; Ezzaouia, Hatem [Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia)

    2016-01-01

    Graphical abstract: At high annealing temperatures, many atoms do not suffer the attraction of surface species due to the thermal agitation and consequently few atoms are adsorbed. As the temperature is lowered the adsorption is more efficient to the point that is no more atoms in the gas phase. Indeed at relatively low temperatures, the atoms have too little energy to escape from the surface or even to vibrate against it. They lost their degree of freedom in the direction perpendicular to the surface. But this does not prevent the atoms to diffuse along the surface. As a result, the layer's thickness decrease with increasing the annealing temperature. - Highlights: The results extracted from this work are: • The post-deposition thermal treatment improves the crystallinity the film at moderate temperature (500 °C). • The higher annealing temperature can lead to decrease the silicon–hydrogen bonds and increase the Si–Si bonds. • Moderate annealing temperature (700 °C) seems to be crucial for obtaining high minority carrier life times. • Hydrogen effusion phenomenon start occurring at 500–550 °C and get worsen at 900 °C. - Abstract: In this paper, hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited on mono-crystalline silicon substrate by plasma enhanced chemical vapor deposition (PECVD) under different hydrogen flow rates followed by a thermal treatment in an infrared furnace at different temperature ranging from 300 to 900 °C. The investigated structural, morphological and optoelectronic properties of samples were found to be strongly dependent on the annealing temperature. Raman spectroscopy revealed that nc-Si:H films contain crystalline, amorphous and mixed structures as well. We find that post-deposition thermal treatment may lead to a tendency for structural improvement and a decrease of the disorder in the film network at moderate temperature under 500 °C. As for annealing at higher temperature up to 900

  3. Fast thermal annealing of implantation defects in silicon. Solid phase epitaxy and residual imperfection recovery

    International Nuclear Information System (INIS)

    Adekoya, O.A.

    1987-06-01

    Basic processes ruling the crystal reconstitution in solid phase during fast thermal annealing are studied; the role of electronic and thermodynamic effects at the interface is precised, following the implantations of a donor element (p + ), an acceptor element (B + ) and an intrinsic element (Ge + ). Then, after recrystallization, the electric role of residual point defects is shown together with the possibility of total recovery and an important electric activation of the doping [fr

  4. Pt thermal atomic layer deposition for silicon x-ray micropore optics.

    Science.gov (United States)

    Takeuchi, Kazuma; Ezoe, Yuichiro; Ishikawa, Kumi; Numazawa, Masaki; Terada, Masaru; Ishi, Daiki; Fujitani, Maiko; Sowa, Mark J; Ohashi, Takaya; Mitsuda, Kazuhisa

    2018-04-20

    We fabricated a silicon micropore optic using deep reactive ion etching and coated by Pt with atomic layer deposition (ALD). We confirmed that a metal/metal oxide bilayer of Al 2 O 3 ∼10  nm and Pt ∼20  nm was successfully deposited on the micropores whose width and depth are 20 μm and 300 μm, respectively. An increase of surface roughness of sidewalls of the micropores was observed with a transmission electron microscope and an atomic force microscope. X-ray reflectivity with an Al Kα line at 1.49 keV before and after the deposition was measured and compared to ray-tracing simulations. The surface roughness of the sidewalls was estimated to increase from 1.6±0.2  nm rms to 2.2±0.2  nm rms. This result is consistent with the microscope measurements. Post annealing of the Pt-coated optic at 1000°C for 2 h showed a sign of reduced surface roughness and better angular resolution. To reduce the surface roughness, possible methods such as the annealing after deposition and a plasma-enhanced ALD are discussed.

  5. Physical and optical characterisation of carbon-silicon layers produced by rapid thermal chemical vapour deposition

    International Nuclear Information System (INIS)

    McBride, G.M.

    1994-04-01

    The Quplas II reactor is a novel chemical vapour deposition (CVD) system, which was recently designed and built at The Queen's University of Belfast. The system was intended to produce layers of Silicon (Si) for application in advanced bipolar transistor manufacture. It became clear that the system was capable of depositing novel materials such as Silicon-Carbon (Si-C) films which could have application as the emitter material in heterojunction bipolar transistors (HBT's) formed on silicon substrates. This work focuses mainly on the development of analytical techniques to allow characterisation of the deposited layers of Si-C and permit optimisation of both the process conditions and the deposition system. The techniques that were developed to characterise the Si-C films in terms of their physical and optical properties included: Secondary Ion Mass Spectroscopy (SIMS), X-Ray Diffractometry (XRD), Transmission and Scanning Electron Microscopy (TEM and SEM), Near Infrared (NIR) and Ultraviolet/Visible/Near Infrared (UV/VIS/NIR) Spectroscopy. From assessing the data obtained from the analysis of the samples using the techniques mentioned above, it was possible to characterise the Si-C films in terms of: stoichiometry, crystallinity, degree of oxygen contamination, thickness, optical roughness of the film/air and film/substrate interfaces, and energy bandgap. In the fabrication of Si-C films it was found to be necessary to use low process pressures in order to ensure that the film deposition was slow enough to allow for a more ordered growth process. This led to the formation of polycrystalline Si-C films which had greatly reduced levels of oxygen compared to earlier amorphous films. In addition the polycrystalline Si-C films tended to have optically rough film/air and film/substrate interfaces. For most samples it was possible to obtain the thickness of their Si-C films from their SIMS profiles. Based on the method of interferometry, the thickness of the Si-C films

  6. Transmission positron microscopes

    International Nuclear Information System (INIS)

    Doyama, Masao; Kogure, Yoshiaki; Inoue, Miyoshi; Kurihara, Toshikazu; Yoshiie, Toshimasa; Oshima, Ryuichiro; Matsuya, Miyuki

    2006-01-01

    Immediate and near-future plans for transmission positron microscopes being built at KEK, Tsukuba, Japan, are described. The characteristic feature of this project is remolding a commercial electron microscope to a positron microscope. A point source of electrons kept at a negative high voltage is changed to a point source of positrons kept at a high positive voltage. Positional resolution of transmission microscopes should be theoretically the same as electron microscopes. Positron microscopes utilizing trapping of positrons have always positional ambiguity due to the diffusion of positrons

  7. Thermal studies of poly(esters) containing silicon or germanium in the main chain

    International Nuclear Information System (INIS)

    Tagle, L.H.; Terraza, C.; Valenzuela, P.; Leiva, A.; Urzua, M.

    2005-01-01

    The thermal properties of poly(esters) containing Si and/or Ge in the main chain derived from the acid dichlorides bis(4-chloroformyl-phenyl)-dimethyl-silane, bis(4-chloroformyl-phenyl)-dimethyl-germane, bis(4-chloroformyl-phenyl)-diphenyl-silane and bis(4-chloroformyl-phenyl)-diphenyl-silane, and the diphenols bis(4-hydroxyphenyl)-dimethyl-silane, bis(4-hydroxyphenyl)-dimethyl-germane, bis(4-hydroxyphenyl)-diphenyl-silane and bis(4-hydroxyphenyl)-diphenyl-germane were studied by differential scanning calorimetry and dynamic thermogravimetry. Poly(esters) with two Si atoms in the main chain showed higher values of T g than those with two Ge atoms, and the same was observed for poly(esters) with phenyl groups bonded to the heteroatoms, instead of those with methyl groups. Thermal decomposition temperatures were also higher for those poly(esters) with two Si atoms in the main chain and those in which the heteroatom is bonded to phenyl groups, due to the higher polarity of the Si-C bond in front of the Ge-C

  8. Thermal Stability of Copper-Aluminum Alloy Thin Films for Barrierless Copper Metallization on Silicon Substrate

    Science.gov (United States)

    Wang, C. P.; Dai, T.; Lu, Y.; Shi, Z.; Ruan, J. J.; Guo, Y. H.; Liu, X. J.

    2017-08-01

    Copper thin films with thickness of about 500 nm doped with different aluminum concentrations have been prepared by magnetron sputtering on Si substrate and their crystal structure, microstructure, and electrical resistivity after annealing at various temperatures (200°C to 600°C) for 1 h or at 400°C for different durations (1 h to 11 h) investigated by grazing-incidence x-ray diffraction (GIXRD) analysis, scanning electron microscopy (SEM), and four-point probe (FPP) measurements. Cu-1.8Al alloy thin film exhibited good thermal stability and low electrical resistivity (˜5.0 μΩ cm) after annealing at 500°C for 1 h or 400°C for 7 h. No copper silicide was observed at the Cu-Al/Si interface by GIXRD analysis or SEM for this sample. This result indicates that doping Cu thin film with small amounts of Al can achieve high thermal stability and low electrical resistivity, suggesting that Cu-1.8Al alloy thin film could be used for barrierless Cu metallization on Si substrate.

  9. Low temperature synthesis of silicon quantum dots with plasma chemistry control in dual frequency non-thermal plasmas.

    Science.gov (United States)

    Sahu, Bibhuti Bhusan; Yin, Yongyi; Han, Jeon Geon; Shiratani, Masaharu

    2016-06-21

    The advanced materials process by non-thermal plasmas with a high plasma density allows the synthesis of small-to-big sized Si quantum dots by combining low-temperature deposition with superior crystalline quality in the background of an amorphous hydrogenated silicon nitride matrix. Here, we make quantum dot thin films in a reactive mixture of ammonia/silane/hydrogen utilizing dual-frequency capacitively coupled plasmas with high atomic hydrogen and nitrogen radical densities. Systematic data analysis using different film and plasma characterization tools reveals that the quantum dots with different sizes exhibit size dependent film properties, which are sensitively dependent on plasma characteristics. These films exhibit intense photoluminescence in the visible range with violet to orange colors and with narrow to broad widths (∼0.3-0.9 eV). The observed luminescence behavior can come from the quantum confinement effect, quasi-direct band-to-band recombination, and variation of atomic hydrogen and nitrogen radicals in the film growth network. The high luminescence yields in the visible range of the spectrum and size-tunable low-temperature synthesis with plasma and radical control make these quantum dot films good candidates for light emitting applications.

  10. Rapid Thermal Annealing and Hydrogen Passivation of Polycrystalline Silicon Thin-Film Solar Cells on Low-Temperature Glass

    Directory of Open Access Journals (Sweden)

    Mason L. Terry

    2007-01-01

    Full Text Available The changes in open-circuit voltage (Voc, short-circuit current density (Jsc, and internal quantum efficiency (IQE of aLuminum induced crystallization, ion-assisted deposition (ALICIA polycrystalline silicon thin-film solar cells on low-temperature glass substrates due to rapid thermal anneal (RTA treatment and subsequent remote microwave hydrogen plasma passivation (hydrogenation are examined. Voc improvements from 130 mV to 430 mV, Jsc improvements from 1.2 mA/cm2 to 11.3 mA/cm2, and peak IQE improvements from 16% to > 70% are achieved. A 1-second RTA plateau at 1000°C followed by hydrogenation increases the Jsc by a factor of 5.5. Secondary ion mass spectroscopy measurements are used to determine the concentration profiles of dopants, impurities, and hydrogen. Computer modeling based on simulations of the measured IQE data reveals that the minority carrier lifetime in the absorber region increases by 3 orders of magnitude to about 1 nanosecond (corresponding to a diffusion length of at least 1 μm due to RTA and subsequent hydrogenation. The evaluation of the changes in the quantum efficiency and Voc due to RTA and hydrogenation with computer modeling significantly improves the understanding of the limiting factors to cell performance.

  11. Silicon drift detector based X-ray spectroscopy diagnostic system for the study of non-thermal electrons at Aditya tokamak.

    Science.gov (United States)

    Purohit, S; Joisa, Y S; Raval, J V; Ghosh, J; Tanna, R; Shukla, B K; Bhatt, S B

    2014-11-01

    Silicon drift detector based X-ray spectrometer diagnostic was developed to study the non-thermal electron for Aditya tokamak plasma. The diagnostic was mounted on a radial mid plane port at the Aditya. The objective of diagnostic includes the estimation of the non-thermal electron temperature for the ohmically heated plasma. Bi-Maxwellian plasma model was adopted for the temperature estimation. Along with that the study of high Z impurity line radiation from the ECR pre-ionization experiments was also aimed. The performance and first experimental results from the new X-ray spectrometer system are presented.

  12. Elastic and thermal properties of silicon compounds from first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Haijun; Zhu, H.J. [Yancheng Institute of Technology (China). School of Materials Engineering; Cheng, W.H. [Yancheng Institute of Technology (China). Dept. of Light Chemical Engineering; Xie, L.H. [Sichuan Normal Univ., Chengdu (China). Inst. of Solid State Physics and School of Physics and Electronic Engineering

    2016-11-01

    The structural and elastic properties of V-Si (V{sub 3}Si, VSi{sub 2}, V{sub 5}Si{sub 3}, and V{sub 6}Si{sub 5}) compounds are studied by using first-principles method. The calculated equilibrium lattice parameters and formation enthalpy are in good agreement with the available experimental data and other theoretical results. The calculated results indicate that the V-Si compounds are mechanically stable. Elastic properties including bulk modulus, shear modulus, Young's modulus, and Poisson's ratio are also obtained. The elastic anisotropies of V-Si compounds are investigated via the three-dimensional (3D) figures of directional dependences of reciprocals of Young's modulus. Finally, based on the quasi-harmonic Debye model, the internal energy, Helmholtz free energy, entropy, heat capacity, thermal expansion coefficient, Grueneisen parameter, and Debye temperature of V-Si compounds have been calculated.

  13. Positron emission tomography

    International Nuclear Information System (INIS)

    Iio, Masahiro

    1982-01-01

    Utilization of positron emission tomography was reviewed in relation to construction and planned construction of small-size medical cyclotrons, planned construction of positron cameras and utilization of short-lived radionuclides. (Chiba, N.)

  14. Dynamic and Thermal Properties of Aluminum Alloy A356/Silicon Carbide Hollow Particle Syntactic Foams

    Directory of Open Access Journals (Sweden)

    James Cox

    2014-12-01

    Full Text Available Aluminum alloy A356 matrix syntactic foams filled with SiC hollow particles (SiCHP are studied in the present work. Two compositions of syntactic foams are studied for quasi-static and high strain rate compression. In addition, dynamic mechanical analysis is conducted to study the temperature dependent energy dissipation and damping capabilities of these materials. The thermal characterization includes study of the coefficient of thermal expansion (CTE. A356/SiCHP syntactic foams are not strain rate sensitive as the compressive strength displayed little variation between the tested strain rates of 0.001–2100 s−1. Microscopic analysis of the high strain rate compression tested specimens showed that the fracture is initiated by the failure of hollow particles at the onset of the plastic deformation region. This is followed by plastic deformation of the matrix material and further crushing of particles. The syntactic foams showed decrease in storage modulus with increasing temperature and the trend was nearly linear up to 500 °C. The alloy shows a similar behavior at low temperature but the decrease in storage modulus increases sharply over 375 °C. The loss modulus is very small for the tested materials because of lack of viscoelasticity in metallic materials. The trend in the loss modulus is opposite, where the matrix alloy has lower loss modulus than syntactic foams at low temperature. However, over 250 °C the matrix loss modulus starts to increase rapidly and attains a peak around 460 °C. Syntactic foams have higher damping parameter at low temperatures than the matrix alloy. Incorporation of SiCHP helps in decreasing CTE. Compared to the CTE of the matrix alloy, 23.4 × 10−6 °C−1, syntactic foams showed CTE values as low as 11.67 × 10−6 °C−1.

  15. Design, simulation and fabrication of a flexible bond pad with a hollow annular protuberance to improve the thermal fatigue lifetime for through-silicon vias

    International Nuclear Information System (INIS)

    Wang, Guilian; Ding, Guifu; Luo, Jiangbo; Niu, Di; Zhao, Junhong; Zhao, Xiaolin; Wang, Yan; Liu, Rui

    2014-01-01

    This paper presents a flexible bond pad (FBP) with a hollow annular protuberance to improve the thermal fatigue lifetime for its application to through-silicon vias (TSVs). The hollow annular protuberance structure across the interface between the filled copper in TSV and silicon substrate not only isolates the FBP from stress/strain concentration regions (the corners of the TSV) but also disperses TSV-induced deformation. The plastic strain distributions of the FBP and conventional plate-type bond pad (CPBP) were simulated by finite element method (FEM) under the temperature cycles. Based on the simulation results, the thermal fatigue lifetimes of the CPBP and the FBP with different TSV diameters were predicted by the Coffin–Manson equation. The results indicate that thermal fatigue lifetimes of the FBP are significantly greater than those of the CPBP and their fatigue lifetimes both decrease with the increase of TSV diameter. To examine the reliability of the predicted results, the CPBP and the FBP with TSV diameter of 100 µm were fabricated by MEMS technology and temperature cycling tests (TCTs) were performed to obtain their thermal fatigue lifetimes. The test results are in good agreement with the numerical simulation results, and it shows that the proposed FBP can effectively improve the thermal fatigue lifetime for TSVs. (paper)

  16. Efficient Cryosolid Positron Moderators

    Science.gov (United States)

    2012-08-01

    table layout Figure 21 shows the integration of the IR spectroscopy optics with the positron Moderation and Annihilation vacuum chambers on the...Characterization of Cryogenic Moderators The application of Matrix Isolation Spectroscopy (MIS) to characterizing cryogenic solid positron ...Matrix Isolation Spectroscopy capability into our Positron Moderation apparatus, which enables spectroscopic characterization of the cryogenic

  17. Positron emission tomography

    International Nuclear Information System (INIS)

    Reivich, M.; Alavi, A.

    1985-01-01

    This book contains 24 selections. Some of the titles are: Positron Emission Tomography Instrumentation, Generator Systems for Positron Emitters, Reconstruction Algorithms, Cerebral Glucose Consumption: Methodology and Validation, Cerebral Blood Flow Tomography Using Xenon-133 Inhalation: Methods and Clinical Applications, PET Studies of Stroke, Cardiac Positron Emission Tomography, and Use of PET in Oncology

  18. Application of positron annihilation techniques for semiconductor studies

    International Nuclear Information System (INIS)

    Karwasz, G.P.; Zecca, A.; Brusa, R.S.; Pliszka, D.

    2004-01-01

    Positron annihilation techniques, being non-destructive, allowing depth profiling down to a few micrometers and detecting open-volume defects (vacancies, dislocations etc.) at single ppm concentrations constitute a valuable and complementary method, compared to other solid-state-physics studies. We give examples of investigation in the field of semiconductors with different techniques, both with and without use of positron low-energy beams. The Doppler broadening of the 511 keV annihilation line method and the slow positron beam were used to study helium-implanted silicon and the surface reduction processes in semiconducting glasses. The positron lifetime technique and coincidence spectra of the Doppler broadening were used for systematic studies of metals and semiconductors. Doppler-coincidence method was then used to identify the kinetics of oxygen precipitates in Czochralski-grown silicon

  19. Thermoelectric Properties of Silicon Germanium: An Investigation of the Reduction of Lattice Thermal Conductivity and Enhancement of Power Factor

    Science.gov (United States)

    Lahwal, Ali Sadek

    Thermoelectric materials are of technological interest owing to their ability of direct thermal-to-electrical energy conversion. In thermoelectricity, thermal gradients can be used to generate an electrical power output. Recent efforts in thermoelectrics are focused on developing higher efficient power generation materials. In this dissertation, the overall goal is to investigate both the n-type and p-type of the state of the art thermoelectric material, silicon germanium (SiGe), for high temperature power generation. Further improvement of thermoelectric performance of Si-Ge alloys hinges upon how to significantly reduce the as yet large lattice thermal conductivity, and optimizing the thermoelectric power factor PF. Our methods, in this thesis, will be into two different approaches as follow: The first approach is manipulating the lattice thermal conductivity of n and p-type SiGe alloys via direct nanoparticle inclusion into the n-type SiGe matrix and, in a different process, using a core shell method for the p-type SiGe. This approach is in line with the process of in-situ nanocomposites. Nanocomposites have become a new paradigm for thermoelectric research in recent years and have resulted in the reduction of thermal conductivity via the nano-inclusion and grain boundary scattering of heat-carrying phonons. To this end, a promising choice of nano-particle to include by direct mixing into a SiGe matrix would be Yttria Stabilized Zirconia ( YSZ). In this work we report the preparation and thermoelectric study of n-type SiGe + YSZ nanocomposites prepared by direct mechanical mixing followed by Spark Plasma Sintering (SPS) processing. Specifically, we experimentally investigated the reduction of lattice thermal conductivity (kappaL) in the temperature range (30--800K) of n-type Si 80Ge20P2 alloys with the incorporation of YSZ nanoparticles (20 ˜ 40 nm diameter) into the Si-Ge matrix. These samples synthesized by SPS were found to have densities > 95% of the

  20. Positron sources for electron-positron colliders application to the ILC and CLIC

    CERN Multimedia

    CERN. Geneva

    2008-01-01

    The increased demanding qualities for positron sources dedicated to e+e- colliders pushed on investigations oriented on new kinds of e+ sources. The different kinds of positron sources polarized and no polarized are considered. Their main features (intensity, emittance) are described and analysed. Comparison between the different sources is worked out. The characteristics of the positron beam available in the collision point are greatly depending on the capture device and on the positron accelerator. Different kinds of capture systems are considered and their qualities, compared. Intense positron sources which are necessary for the colliders require intense incident beams (electrons or photons). The large number of pairs created in the targets leads to important energy deposition and so, thermal heating, which associated to temperature gradients provoke mechanical stresses often destructive. Moreover, the important Coulomb collisions, can affect the atomic structure in crystal targets and the radiation resist...

  1. Defect Characterization in Semiconductors with Positron Annihilation Spectroscopy

    Science.gov (United States)

    Tuomisto, Filip

    Positron annihilation spectroscopy is an experimental technique that allows the selective detection of vacancy defects in semiconductors, providing a means to both identify and quantify them. This chapter gives an introduction to the principles of the positron annihilation techniques and then discusses the physics of some interesting observations on vacancy defects related to growth and doping of semiconductors. Illustrative examples are selected from studies performed in silicon, III-nitrides, and ZnO.

  2. Theory of the temperature dependence of positron bulk lifetimes-implications for vacancy formation enthalpy measurements via positron experiments

    International Nuclear Information System (INIS)

    Tam, S.W.; Sinha, S.K.; Siegel, R.W.

    1977-02-01

    Temperature dependent effects, which may have a bearing on determinations of vacancy formation enthalpies in metals by positron annihilation, have been observed in certain metals. These effects have been observed to occur both at temperatures below those at which positron annihilation is most sensitive to equilibrium vacancies and at temperatures well within the vacancy-sensitive region. The effect of thermal lattice displacements on positron lifetimes in metals was investigated to help understand these phenomena

  3. Correlating the silicon surface passivation to the nanostructure of low-temperature a-Si:H after rapid thermal annealing

    NARCIS (Netherlands)

    Macco, B.; Melskens, J.; Podraza, N.J.; Arts, K.; Pugh, C.; Thomas, O.; Kessels, W.M.M.

    2017-01-01

    Using an inductively coupled plasma, hydrogenated amorphous silicon (a-Si:H) films have been prepared at very low temperatures (<50 °C) to provide crystalline silicon (c-Si) surface passivation. Despite the limited nanostructural quality of the a-Si:H bulk, a surprisingly high minority carrier

  4. Coupling of near-field thermal radiative heating and phonon Monte Carlo simulation: Assessment of temperature gradient in n-doped silicon thin film

    International Nuclear Information System (INIS)

    Wong, Basil T.; Francoeur, Mathieu; Bong, Victor N.-S.; Mengüç, M. Pinar

    2014-01-01

    Near-field thermal radiative exchange between two objects is typically more effective than the far-field thermal radiative exchange as the heat flux can increase up to several orders higher in magnitudes due to tunneling of evanescent waves. Such an interesting phenomenon has started to gain its popularity in nanotechnology, especially in nano-gap thermophotovoltaic systems and near-field radiative cooling of micro-/nano-devices. Here, we explored the existence of thermal gradient within an n-doped silicon thin film when it is subjected to intensive near-field thermal radiative heating. The near-field radiative power density deposited within the film is calculated using the Maxwell equations combined with fluctuational electrodynamics. A phonon Monte Carlo simulation is then used to assess the temperature gradient by treating the near-field radiative power density as the heat source. Results indicated that it is improbable to have temperature gradient with the near-field radiative heating as a continuous source unless the source comprises of ultra-short radiative pulses with a strong power density. - Highlights: • This study investigates temperature distribution in an n-doped silicon thin film. • Near-field radiative heating is treated as a volumetric phenomenon. • The temperature gradient is computed using phonon MC simulation. • Temperature of thin film can be approximated as uniform for radiation calculations. • If heat source is a pulsed radiation, a temperature gradient can be established

  5. Stress evaluation at the ILC positron source

    Energy Technology Data Exchange (ETDEWEB)

    Ushakov, Andriy; Moortgat-Pick, Gudrid [Universitaet Hamburg, II. Institut fuer Theoretische Physik, Luruper Chaussee 149, 22761 Hamburg (Germany); Riemann, Sabine; Dietrich, Felix [Deutsches Elektronen-Synchrotron (DESY), Standort Zeuthen, Platanenallee 6, 15738 Zeuthen (Germany); Aulenbacher, Kurt; Tyukin, Valery; Heil, Philipp [Johannes Gutenberg-Universitaet Mainz, Institut fuer Kernphysik, Johann-Joachim-Becher-Weg 45, 55128 Mainz (Germany)

    2016-07-01

    High luminosity is required at future Linear Colliders which is particularly challenging for all corresponding positron sources. At the International Linear Collider (ILC), polarized positrons are obtained from electron-positron pairs by converting high-energy photons produced by passing the high-energy main electron beam through a helical undulator. The conversion target undergoes cyclic stress with high peak values. To distribute the thermal load, the target is designed as wheel spinning in vacuum with 100 m/s. However, the cyclic stress over long time at high target temperatures could exceed the fatigue stress limit. In the talk, an overview of the ILC positron source is given. The prospects to study material parameters under conditions as expected at the ILC are discussed.

  6. Stress and phase changes in a low-thermal-expansion Al-3at.%Ge alloy film on oxidized silicon wafers

    International Nuclear Information System (INIS)

    Tu, K.N.; Rodbell, K.P.; Herd, S.R.; Mikalsen, D.J.

    1993-01-01

    The alloy of Al-3at.%Ge has been found to have a low thermal expansion and contraction in the temperature range of room temperature to 400 C. The reason for the low thermal contraction (or expansion) is the precipitation (or dissolution) of Ge in the alloy. The Ge precipitates have a diamond structure in which each Ge atom occupies a much larger atomic volume than a Ge atom dissolved substitutionally in Al. The volume difference compensates for the effect of thermal expansion and contraction with changing temperature which in turn reduces the thermal stress due to thermal mismatch. The technique of wafer bending was used to determine the stress of the alloy film on oxidized silicon wafers upon thermal cycling; indeed, it is much lower than that of pure Al on identical wafers. The morphology of precipitation and dissolution of Ge in Al has been studied by transmission and scanning electron microscopy. It is found that the precipitation follows a discontinuous mode and occurs predominantly along grain boundaries. In dissolving the Ge precipitates into Al, voids are left behind because of the volume difference. It is proposed that this may explain the enhancement of nucleation of voids in the alloy film upon thermal cycling. (orig.)

  7. Slow positron applications at slow positron facility of institute of materials structure science, KEK

    Science.gov (United States)

    Hyodo, Toshio; Mochizuki, Izumi; Wada, Ken; Toge, Nobukazu; Shidara, Tetsuo

    2018-05-01

    Slow Positron Facility at High Energy Accelerator Research Organization (KEK) is a user dedicated facility with an energy-tunable (0.1 - 35 keV) slow positron beam created by a dedicated ˜ 50 MeV linac. It operates in a short pulse (width 1-12 ns, variable, 5×106 e+/s) and a long pulse (width 1.2 µs, 5×107 e+/s) modes of 50 Hz. High energy positrons from pair creation are moderated by reemission after thermalization in W foils. The reemitted positrons are then electrostatically accelerated to a desired energy up to 35 keV and magnetically transported. A pulse-stretching section (pulse stretcher) is installed in the middle of the beamline. It stretches the slow positron pulse for the experiments where too many positrons annihilating in the sample at the same time has to be avoided. Four experiment stations for TRHEPD (total-reflection high-energy positron diffraction), LEPD (low-energy positron diffraction), Ps- (positronium negative ion), and Ps-TOF (positronium time-of-flight) experiments are connected to the beamline branches, SPF-A3, SPF-A4, SPF-B1 and SPF-B2, respectively. Recent results of these stations are briefly described.

  8. Positron annihilation studies of mesoporous silica films using a slow positron beam

    International Nuclear Information System (INIS)

    He Chunqing; Muramatsu, Makoto; Ohdaira, Toshiyuki; Kinomura, Atsushi; Suzuki, Ryoichi; Ito, Kenji; Kabayashi, Yoshinori

    2006-01-01

    Positron annihilation lifetime spectra were measured for mesoporous silica films, which were synthesized using triblock copolymer (EO 106 PO 70 EO 106 ) as a structure-directing agent. Different positron lifetime spectra for the deposited and calcined films indicated the formation of meso-structure after calcination, which was confirmed by Fourier transform infrared (FTIR) spectra and field emission-scanning electron microscopy (FE-SEM) observation. Open porosity or pore interconnectivity of a silica film might be evaluated by a two-dimensional positron annihilation lifetime spectrum of an uncapped film. Pore sizes and their distributions in the silica films were found to be affected by thermal treatments

  9. Spectroscopic, Elemental and Thermal Analysis, and Positron Annihilation Studies on Ca(II), Sr(II), Ba(II), Pb(II), and Fe(III) Penicillin G Potassium Complexes

    Science.gov (United States)

    Refat, M. S.; Sharshara, T.

    2015-11-01

    The [Pb(Pin)2] · 3H2O, [M(Pin)(H2O)2(Cl)] · nH2O (M = SrII, CaII or BaII; n = 0-1), and [Fe(Pin)2(Cl)(H2O)] · H2O penicillin G potassium (Pin) complexes were synthesized and characterized using elemental analyses, molar conductivity, thermal analysis and electronic spectroscopy techniques. The positron annihilation lifetime (PAL) and Doppler broadening (DB) techniques have been employed to probe the defects and structural changes of Pin ligand and its complexes. The PAL and DB line-shape parameters were discussed in terms of the structure, molecular weight, ligand-metal molar ratio, and other properties of the Pin complexes.

  10. Positron-containing systems and positron diagnostics

    International Nuclear Information System (INIS)

    1978-01-01

    The results of the experimental and theoretical investigations are presented. Considered are quantum-mechanical calculations of wave functions describing the states of positron-containing atomic systems and of cross-sections of the processes characterizing different interactions, and also the calculations of the behaviour of positrons in gases in the presence of an electric field. The results of experimental tests are presented by the data describing the behaviour of positrons and positronium in liquids, polymers and elastomers, complex oxides and in different solids. New equipment and systems developed on the basis of current studies are described. Examined is a possibility of applying the methods of model and effective potentials for studying the bound states of positron systems and for calculating cross-sections of elementary processes of elastic and inelastic collisions with a positron involved. The experimental works described indicate new possibilities of the positron diagnosis method: investigation of thin layers and films of semiconductor materials, defining the nature of chemical bonds in semiconductors, determination of the dislocation density in deformed semiconductors, derivation of important quantitative information of the energy states of radiation defects in them

  11. Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Yilbas, B.S., E-mail: bsyilbas@kfupm.edu.sa; Ali, H.

    2016-08-15

    Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

  12. Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

    Science.gov (United States)

    Yilbas, B. S.; Ali, H.

    2016-08-01

    Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

  13. Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

    International Nuclear Information System (INIS)

    Yilbas, B.S.; Ali, H.

    2016-01-01

    Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

  14. Properties of point defects either native or induced by irradiation in the 3C and 6H polytypes of silicon carbide determined by positron annihilation and EPR; Proprietes des defauts ponctuels natifs et induits par irradiation dans les polytypes 3C et 6H du carbure de silicium determinees par annihilation de positons et RPE

    Energy Technology Data Exchange (ETDEWEB)

    Kerbiriou, X

    2006-02-15

    Potential applications of silicon carbide (SiC) in micro-electronics have justified many studies on point defects, which play an important role in the electrical compensation. Moreover, this material has many assets to take part in the fissile materials confining in the gas cooled reactors of the future (4. generation). In this thesis, we have used Electronic Paramagnetic Resonance and Positron Annihilation Spectroscopy to study the properties of point defects (nature, size, charge state, migration and agglomeration during annealing), either native or induced by irradiation with various particles (H{sup +}, e{sup -}, carbon ions), in the 3C and 6H polytypes of SiC. The positron annihilation study of native defects in 6H-SiC has shown the presence of a strong concentration of non-vacancy traps of acceptor type, which are not present in the 3C-SiC crystals. The nature of the defects detected after irradiation with low energy electrons (190 keV) depends on the polytype. Indeed, while silicon Frenkel pairs and carbon mono-vacancies are detected in the 6H crystals, only carbon mono-vacancies are detected in the 3C crystals. We propose that these differences concerning the populations of detected point defects result from different values of the silicon displacement threshold energy for the two polytypes (approximately 20 eV for 6H and 25 V for 3C). In addition, the irradiations with 12 MeV protons and 132 MeV carbon ions have created silicon mono-vacancies as well as VSi-VC di-vacancies. Neither the particle (protons or ions carbon), nor the polytype (3C or 6H) influence the nature of the generated defects. Finally the study of the annealing of 6H-SiC monocrystals irradiated with 12 MeV protons have revealed several successive processes. The most original result is the agglomeration of the silicon mono-vacancies with the VSi-VC di-vacancies which leads to the formation of VSi-VC-VSi tri-vacancies. (author)

  15. Observations of discrete energy loss effects in spectra of positrons reflected from solid surfaces

    International Nuclear Information System (INIS)

    Dale, J.M.; Hulett, L.D.; Pendyala, S.

    1980-01-01

    Surfaces of tungsten and silicon have been bombarded with monoenergetic beams of positrons and electrons. Spectra of reflected particles show energy loss tails with discrete peaks at kinetic energies about 15 eV lower than that of the elastic peaks. In the higher energy loss range for tungsten, positron spectra show fine structure that is not apparent in the electron spectra. This suggests that the positrons are losing energy through mechanisms different from that of the electrons

  16. Cardiac positron emission tomography

    International Nuclear Information System (INIS)

    Eftekhari, M.; Ejmalian, G.

    2003-01-01

    Positron emission tomography is an intrinsically tool that provide a unique and unparalleled approach for clinicians and researchers to interrogate the heart noninvasively. The ability to label substances of physiological interest with positron-emitting radioisotopes has permitted insight into normal blood flow and metabolism and the alterations that occur with disease states. Positron emission tomography of the heart has evolved as a unique, noninvasive approach for the assessment of myocardial perfusion, metabolism, and function. Because of the intrinsic quantitative nature of positron emission tomography measurements as well as the diverse compounds that can be labeled with positron- emitting radioisotopes, studies with positron emission tomography have provided rich insight into the physiology of the heart under diverse conditions

  17. Positron emission computed tomography

    International Nuclear Information System (INIS)

    Grover, M.; Schelbert, H.R.

    1985-01-01

    Regional mycardial blood flow and substrate metabolism can be non-invasively evaluated and quantified with positron emission computed tomography (Positron-CT). Tracers of exogenous glucose utilization and fatty acid metabolism are available and have been extensively tested. Specific tracer kinetic models have been developed or are being tested so that glucose and fatty acid metabolism can be measured quantitatively by Positron-CT. Tracers of amino acid and oxygen metabolism are utilized in Positron-CT studies of the brain and development of such tracers for cardiac studies are in progress. Methods to quantify regional myocardial blood flow are also being developed. Previous studies have demonstrated the ability of Positron-/CT to document myocardial infarction. Experimental and clinical studies have begun to identify metabolic markers of reversibly ischemic myocardium. The potential of Positron-CT to reliably detect potentially salvageable myocardium and, hence, to identify appropriate therapeutic interventions is one of the most exciting applications of the technique

  18. Theory, development, and applications of the scanning positron microbeam and positron reemission microscope

    International Nuclear Information System (INIS)

    Brandes, G.R.

    1990-01-01

    The theory, design, development, and applications of two new imaging instruments, the scanning positron microbeam (SPM) and positron reemission microscope (PRM), are discussed. The SPM consists of a sectored lens which focuses and rasters the positrons from the beam across the sample. The results of rastering the 10μm x 50μm beam across a test grid demonstrate the SPM's ability to scan a 500μm diameter region and to resolve features with ∼ 5μm resolution. The SPM was used to examine the location of defects in a Si-on-SiO 2 sample. Possible applications to three dimensional defect spectroscopy and the observation of small samples are considered. In the PRM, the positrons from the brightness-enhanced beam are focused at 5keV to an 8/Am diameter spot (FWHM) onto a thin metal single crystal. An image of the opposing side of the film is formed by accelerating and focusing the reemitted thermalized positrons with a cathode lens objective and a projector lens. The final image (real) is a record of the thermal positron emission intensity versus position. Images of surface and subsurface defect structures, taken at magnifications up to 4400x and with a resolution up to 80nm, are presented and discussed. The ultimate resolution capabilities and possible applications of the PRM are examined. The implantation and diffusion process of positrons was studied with the PRM by examining the positron emission profile of 3-9keV positrons implanted into a 2200 angstrom thick Ni single crystal

  19. High resolution positron tomography

    International Nuclear Information System (INIS)

    Brownell, G.L.; Burnham, C.A.

    1982-01-01

    The limits of spatial resolution in practical positron tomography are examined. The four factors that limit spatial resolution are: positron range; small angle deviation; detector dimensions and properties; statistics. Of these factors, positron range may be considered the fundamental physical limitation since it is independent of instrument properties. The other factors are to a greater or lesser extent dependent on the design of the tomograph

  20. High energy positron imaging

    International Nuclear Information System (INIS)

    Chen Shengzu

    2003-01-01

    The technique of High Energy Positron Imaging (HEPI) is the new development and extension of Positron Emission Tomography (PET). It consists of High Energy Collimation Imaging (HECI), Dual Head Coincidence Detection Imaging (DHCDI) and Positron Emission Tomography (PET). We describe the history of the development and the basic principle of the imaging methods of HEPI in details in this paper. Finally, the new technique of the imaging fusion, which combined the anatomical image and the functional image together are also introduced briefly

  1. Positron annihilation spectroscopy in defects of semiconductors

    CERN Document Server

    Fujinami, M

    2002-01-01

    Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 sup 1 sup 8 cm sup - sup 3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon and oxygen-implanted (180 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V sub 6 O sub 2 at 600degC and V sub 1 sub 0 O sub 6 at 800degC. (S.Y.)

  2. BEPC II positron source

    International Nuclear Information System (INIS)

    Pei Guoxi; Sun Yaolin; Liu Jintong; Chi Yunlong; Liu Yucheng; Liu Nianzong

    2006-01-01

    BEPC II-an upgrade project of the Beijing Electron Positron Collider (BEPC) is a factory type of e + e - collider. The fundamental requirements for its injector linac are the beam energy of 1.89 GeV for on-energy injection and a 40 mA positron beam current at the linac end with a low beam emittance of 1.6 μm and a low energy spread of ±0.5% so as to guarantee a higher injection rate (≥50 mA/min) to the storage ring. Since the positron flux is proportional to the primary electron beam power on the target, the authors will increase the electron gun current from 4A to 10A by using a new electron gun system and increase the primary electron energy from 120 MeV to 240 MeV. The positron source itself is an extremely important system for producing more positrons, including a positron converter target chamber, a 12kA flux modulator, the 7m focusing module with DC power supplies and the support. The new positron production linac from the electron gun to the positron source has been installed into the tunnel. In what follows, the authors will emphasize the positron source design, manufacture and tests. (authors)

  3. Positron-atom collisions

    International Nuclear Information System (INIS)

    Drachman, R.J.

    1984-01-01

    The past decade has seen the field of positron-atom collisions mature into an important sub-field of atomic physics. Increasingly intense positron sources are leading towards a situation in which electron and positron collision experiments will be on almost an equal footing, challenging theory to analyze their similarities and differences. The author reviews the advances made in theory, including dispersion theory, resonances, and inelastic processes. A survey of experimental progress and a brief discussion of astrophysical positronics is also included. (Auth.)

  4. Positron emission tomography

    International Nuclear Information System (INIS)

    Paans, A.M.J.

    1981-01-01

    Positron emitting radiopharmaceuticals have special applications in in-vivo studies of biochemical processes. The combination of a cyclotron for the production of radionuclides and a positron emission tomograph for the registration of the distribution of radioactivity in the body enables the measurement of local radioactivity concentration in tissues, and opens up new possibilities in the diagnosis and examination of abnormalities in the metabolism. The principles and procedures of positron emission tomography are described and the necessary apparatus considered, with emphasis on the positron camera. The first clinical applications using 55 Co bloemycine for tumor detection are presented. (C.F.)

  5. Positrons and positronium

    International Nuclear Information System (INIS)

    Jean, Y.C.; Lambrecht, R.M.

    1988-01-01

    This bibliography includes articles, proceedings, abstracts, reports and patents published between 1930 and 1984 on the subject of positrons, positron annihilation and positronium. The subject covers experimental and theoretical results in the areas of physics and chemistry of low and intermediate energy (< 0.6 MeV) positrons and positronium. The topics of interest are: fundamental properties, interactions with matter, nuclear technology, the history and philosophy of antimatter, the theory of the universe, and the applications of positrons in the chemical, physical, and biomedical sciences

  6. Results on positron diffusion in Si

    International Nuclear Information System (INIS)

    Nielsen, B.; Lynn, K.G.; Vehanen, A.; Schultz, P.J.

    1984-10-01

    Positron diffusion in Si(100) and Si(111) has been measured using a variable energy positron beam. The diffusion related parameter, E 0 is found to be 4.2 +- 0.2 keV, significantly longer than previously reported values. The positron diffusion coefficient is estimated at D/sub +/ = 2.3 +- 0.4 cm 2 /sec, the uncertainty arising mainly from the characteristics of the assumed positron implantation profile. A drastic reduction in E 0 is found after heating the sample to 1300 0 K, showing that previously reported low values of E 0 are associated with the thermal history of the sample. A high sensitivity to defects introduced by low energy ion bombardment is found, and the defect recovery was followed during heat treatments. Reconstruction of the Si(111) surface into the so-called 7 x 7 structure had no detectable influence on the positron diffusion behavior. No changes in the positron diffusion was observed after covering the surface with atomic hydrogen. However the yield of positronium formation at the surface was enhanced, attributed to an increased density of states at the surface

  7. On new developments in the physics of positron swarms

    International Nuclear Information System (INIS)

    Petrovic, Z Lj; Bankovic, A; Dujko, S; Marjanovic, S; Suvakov, M; Malovic, G; Marler, J P; Buckman, S J; White, R D; Robson, R E

    2010-01-01

    Recently a new wave of swarm studies of positrons was initiated based on more complete scattering cross section sets. Initially some interesting and new physics was discovered, most importantly negative differential conductivity (NDC) that occurs only for the bulk drift velocity while it does not exist for the flux property. However the ultimate goal was to develop tools to model positron transport in realistic applications and the work that is progressing along these lines is reviewed here. It includes studies of positron transport in molecular gases, thermalization in generic swarm situations and in realistic gas filled traps and transport of positrons in crossed electric and magnetic fields. Finally we have extended the same technique of simulation (Monte Carlo) to studies of thermalization of positronium molecule. In addition, recently published first steps towards including effects of dense media on positron transport are summarized here.

  8. Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment

    Science.gov (United States)

    Zhao, Xuewei; Ma, Limin; Wang, Yishu; Guo, Fu

    2018-01-01

    Through-silicon vias (TSV) are facing unexpected thermo-mechanical reliability problems due to the coefficient of thermal expansion (CTE) mismatch between various materials in TSVs. During applications, thermal stresses induced by CTE mismatch will have a negative impact on other devices connecting with TSVs, even leading to failure. Therefore, it is essential to investigate the stress distribution evolution in the TSV structure under thermal loads. In this report, TSVs were heated to 450°C at different heating rates, then cooled down to room temperature after a 30-min dwelling. After heating treatment, TSV samples exhibited different Cu deformation behaviors, including Cu intrusion and protrusion. Based on the different Cu deformation behaviors, stress in Si around Cu vias of these samples was measured and analyzed. Results analyzed by Raman spectrums showed that the stress distribution changes were associated with Cu deformation behaviors. In the area near the Cu via, Cu protrusion behavior might aggravate the stress in Si obtained from the Raman measurement, while Cu intrusion might alleviate the stress. The possible reason was that in this area, the compressive stress σ_{θ } induced by thermal loads might be the dominant stress. In the area far from the Cu via, thermal loads tended to result in a tensile stress state in Si.

  9. Preparation and properties of lauric acid/silicon dioxide composites as form-stable phase change materials for thermal energy storage

    International Nuclear Information System (INIS)

    Fang Guiyin; Li Hui; Liu Xu

    2010-01-01

    Form-stable lauric acid (LA)/silicon dioxide (SiO 2 ) composite phase change materials were prepared using sol-gel methods. The LA was used as the phase change material for thermal energy storage, with the SiO 2 acting as the supporting material. The structural analysis of these form-stable LA/SiO 2 composite phase change materials was carried out using Fourier transformation infrared spectroscope (FT-IR). The microstructure of the form-stable composite phase change materials was observed by a scanning electronic microscope (SEM). The thermal properties and thermal stability were investigated by a differential scanning calorimeter (DSC) and a thermogravimetric analysis apparatus (TGA), respectively. The SEM results showed that the LA was well dispersed in the porous network of SiO 2 . The DSC results indicated that the melting latent heat of the form-stable composite phase change material is 117.21 kJ kg -1 when the mass percentage of the LA in the SiO 2 is 64.8%. The results of the TGA showed that these materials have good thermal stability. The form-stable composite phase change materials can be used for thermal energy storage in waste heat recovery and solar heating systems.

  10. Thermal phonon scattering in silicon doped with Li, P and Li-O; influence of the electronic structure of the impurities

    International Nuclear Information System (INIS)

    Fortier, Dominique.

    1976-07-01

    Besides the three phonon scattering mechanisms generally considered in insulators, i.e. boundary effect, isotopic scattering and phonon-phonon interaction, the electron-phonon scattering mechanism was studied with special reference to the scattering of thermal phonons by donor impurities in silicon. In order to demonstrate clearly the effect of the electronic structure of the impurity on this scattering, three donor centres were investigated: Li, Li-O and P. On the basis of the calculated relaxation times it was possible from theoretical analysis to account for the main results and to explain why the Li centre scatters thermal phonons more efficiently than Li-O and P centres in the isolated impurity range [fr

  11. Aleph silicon microstrip vertex detector

    CERN Multimedia

    Laurent Guiraud

    1998-01-01

    This microstrip vertex locator was located at the heart of the ALEPH experiment, one of the four experiments at the Large Electron-Positron (LEP) collider. In the experiments at CERN's LEP, which ran from 1989 to 2000, modern silicon microvertex detectors, such as those used at ALEPH, monitored the production of short-lived particles close to the beam pipe.

  12. Application and Development of Methods of Positron Annihilation Spectroscopy for Definition of the Nature, Concentration and Size of Nanoobjects in Materials and Nanomaterials on Basis of Silicon and Iron. Review

    Directory of Open Access Journals (Sweden)

    V.I. Grafutin

    2012-09-01

    Full Text Available It has been shown that one of the effective methods for determining the size of nanoobjects (vacancies, vacancies clusters, vacant cavities, empty spaces, concentration of chemical composition in annihilation of porous materials is the method of positron annihilation spectroscopy. The article features a brief look at experimental researches of nanodefects in porous silicium, quartz irradiated by proton.

  13. Application and Development of Methods of Positron Annihilation Spectroscopy for Definition of the Nature, Concentration and Size of Nanoobjects in Materials and Nanomaterials on Basis of Silicon and Iron. Review

    OpenAIRE

    V.I. Grafutin; O.V. Ilyukhina; Yu.F. Kozlov; I.N. Meshkov; G.G. Myasishcheva; E.P. Prokop'ev; G.I. Savel'ev; S.P. Timoshenkov; Yu.A. Chaplygin; Yu.V. Funtikov; N.O. Khmelevskii; S.L. Yakovenko

    2012-01-01

    It has been shown that one of the effective methods for determining the size of nanoobjects (vacancies, vacancies clusters), vacant cavities, empty spaces, concentration of chemical composition in annihilation of porous materials is the method of positron annihilation spectroscopy. The article features a brief look at experimental researches of nanodefects in porous silicium, quartz irradiated by proton.

  14. Positron annihilation microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Canter, K F [Brandeis Univ., Waltham, MA (United States)

    1997-03-01

    Advances in positron annihilation microprobe development are reviewed. The present resolution achievable is 3 {mu}m. The ultimate resolution is expected to be 0.1 {mu}m which will enable the positron microprobe to be a valuable tool in the development of 0.1 {mu}m scale electronic devices in the future. (author)

  15. Positrons in ionic crystals

    International Nuclear Information System (INIS)

    Pareja, R.

    1988-01-01

    Positron annihilation experiments in ionic crystals are reviewed and their results are arranged. A discussion about the positron states in these materials is made in the light of these results and the different proposed models. The positronium in alkali halides is specially considered. (Author)

  16. Positron emission tomography

    NARCIS (Netherlands)

    Paans, AMJ

    Positron Emission Tomography (PET) is a method for determining biochemical and physiological processes in vivo in a quantitative way by using radiopharmaceuticals labelled with positron emitting radionuclides as C-11, N-13, O-15 and F-18 and by measuring the annihilation radiation using a

  17. PF slow positron source

    International Nuclear Information System (INIS)

    Shirakawa, A.; Enomoto, A.; Kurihara, T.

    1993-01-01

    A new slow-positron source is under construction at the Photon Factory. Positrons are produced by bombarding a tantalum rod with high-energy electrons; they are moderated in multiple tungsten vanes. We report here the present status of this project. (author)

  18. Radiation damage of polymers studied by positron annihilation. Positron and gamma-ray irradiation effects

    International Nuclear Information System (INIS)

    Suzuki, T.; Oki, Y.; Numajiri, M.; Miura, T.; Kondo, K.; Ito, Y.

    1995-01-01

    Positron irradiation effects on polypropylene (PP) have been studied using positron sources ( 22 Na) during positron annihilation (PA) experiments. The irradiation effect was measured by the intensity (I 3 ) of the long-lived component of positronium (Ps). At a low temperature of around 100 K, I 3 for unirradiated PP samples increased due to a termination of the thermal motion of the -CH 3 groups. However, the increase in I 3 for γ-ray irradiated samples was reduced in inverse proportion to the amount of irradiation. Although no increase in I 3 was observed for 1 MGy-irradiated PP with γ-rays, an increase was observed again after a 48 h irradiation by positrons emitted from 22 Na. This may be due to a reconstructing of the polymer chains. (author)

  19. Numerical analysis of thermal stress and dislocation density distributions in large size multi-crystalline silicon ingots during the seeded growth process

    Science.gov (United States)

    Nguyen, Thi Hoai Thu; Chen, Jyh-Chen; Hu, Chieh; Chen, Chun-Hung; Huang, Yen-Hao; Lin, Huang-Wei; Yu, Andy; Hsu, Bruce

    2017-06-01

    In this study, a global transient numerical simulation of silicon growth from the beginning of the solidification process until the end of the cooling process is carried out modeling the growth of an 800 kg ingot in an industrial seeded directional solidification furnace. The standard furnace is modified by the addition of insulating blocks in the hot zone. The simulation results show that there is a significant decrease in the thermal stress and dislocation density in the modified model as compared to the standard one (a maximal decrease of 23% and 75% along the center line of ingot for thermal stress and dislocation density, respectively). This modification reduces the heating power consumption for solidification of the silicon melt by about 17% and shortens the growth time by about 2.5 h. Moreover, it is found that adjusting the operating conditions of modified model to obtain the lower growth rate during the early stages of the solidification process can lower dislocation density and total heater power.

  20. Positron Factory project

    Energy Technology Data Exchange (ETDEWEB)

    Okada, Sohei; Sunaga, Hiromi; Kaneko, Hirohisa; Kawasuso, Atsuo; Masuno, Shin-ichi; Takizawa, Haruki; Yotsumoto, Keiichi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    We have started drafting a construction program for the Positron Factory, in which linac-based intense monoenergetic positron beams are planned to be applied for materials science, biotechnology and basic physics and chemistry. A technical survey study confirmed the feasibility of manufacturing a dedicated electron linac of 100 kW class with a beam energy of 100 MeV, which will produce a world-highest monoenergetic positron beam of more than 10{sup 10}/sec in intensity. A self-driven rotating converter (electrons to positrons and photons) suitable for the high power electron beam was devised and successfully tested. The practicability of simultaneous extraction of multi-channel monoenergetic positron beams with multiple moderator assemblies, which had been originated on the basis of a Monte Carlo simulation, was demonstrated by an experiment using an electron linac. An efficient moderator structure, which is composed of honeycomb-like assembled moderator foils and reflectors, is also proposed. (author)

  1. Positron-Induced Luminescence

    Science.gov (United States)

    Stenson, E. V.; Hergenhahn, U.; Stoneking, M. R.; Pedersen, T. Sunn

    2018-04-01

    We report on the observation that low-energy positrons incident on a phosphor screen produce significantly more luminescence than electrons do. For two different wide-band-gap semiconductor phosphors (ZnS:Ag and ZnO:Zn), we compare the luminescent response to a positron beam with the response to an electron beam. For both phosphors, the positron response is significantly brighter than the electron response, by a factor that depends strongly on incident energy (0-5 keV). Positrons with just a few tens of electron-volts of energy (for ZnS:Ag) or less (for ZnO:Zn) produce as much luminescence as is produced by electrons with several kilo-electron-volts. We attribute this effect to valence band holes and excited electrons produced by positron annihilation and subsequent Auger processes. These results demonstrate a valuable approach for addressing long-standing questions about luminescent materials.

  2. Thermal Reactions in Mixtures of Micron-sized Silicon Monoxide and Titanium Monoxide - Redox Paths Overcoming Passivation Shells.

    Czech Academy of Sciences Publication Activity Database

    Jandová, Věra; Pokorná, Dana; Kupčík, Jaroslav; Bezdička, Petr; Křenek, T.; Netrvalová, M.; Cuřínová, Petra; Pola, Josef

    2018-01-01

    Roč. 44, č. 1 (2018), s. 503-516 ISSN 0922-6168 R&D Projects: GA TA ČR TA04010169 Institutional support: RVO:67985858 Keywords : silicon monoxide * titanium monoxide * hifh-temperature Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry Impact factor: 1.369, year: 2016

  3. Thermal reactions in mixtures of micron-sized silicon monoxide and titanium monoxide: redox paths overcoming passivation shells

    Czech Academy of Sciences Publication Activity Database

    Jandová, V.; Pokorná, D.; Kupčík, Jaroslav; Bezdička, Petr; Křenek, T.; Netrvalová, M.; Cuřínová, P.; Pola, J.

    2018-01-01

    Roč. 44, č. 1 (2018), s. 503-516 ISSN 0922-6168 Institutional support: RVO:61388980 Keywords : Silicon monoxide * Titanium monoxide * High-temperature * Oxygen-transfer reactions * Titanium suboxides * Titanium silicide * Methylene blue depletion Subject RIV: CA - Inorganic Chemistry OBOR OECD: Inorganic and nuclear chemistry Impact factor: 1.369, year: 2016

  4. Positron annihilation and Wheeler complexes in semiconductors

    International Nuclear Information System (INIS)

    Prokop'ev, E.P.

    1995-01-01

    Properties of Ps-Ex (positron-exciton) complex nature Wheeler complexes that may be formed at irradiation of semiconductors and ion crystals by positrons at low temperature under conditions of optical excitation by excitons are studied. Binding energy of similar and more complex systems regarding decomposition in Ps and Ex and/or Ex ± exceeds, at least, 0.1 eV, while lifetime regarding biquantum-self-annihilation constitutes τ 2γ ∼5.02x10 - 10 κ c 3 c (κ c -phenomenological parameter of the effective mass method). The lifetime estimations enabled to conclude that Ps-Ex complexes may be detected in some oxide semiconductors, in zinc sulfide, as well as, in alkaline-haloid crystals. At the same time, in silicon, gallium arsenide and in other semiconductors of A 3 B 5 and A 2 B 6 it is highly improbable to observe these complexes. 27 refs

  5. High efficiency positron moderation

    International Nuclear Information System (INIS)

    Taqqu, D.

    1990-01-01

    A new positron moderation scheme is proposed. It makes use of electric and magnetic fields to confine the β + emitted by a radioactive source forcing them to slow down within a thin foil. A specific arrangement is described where an intermediary slowed-down beam of energy below 10 keV is produced. By directing it towards a standard moderator optimal conversion into slow positrons is achieved. This scheme is best applied to short lived β + emitters for which a 25% moderation efficiency can be reached. Within the state of the art technology a slow positron source intensity exceeding 2 x 10 10 e + /sec is achievable. (orig.)

  6. Positron emission tomography

    International Nuclear Information System (INIS)

    Wienhard, K.; Heiss, W.D.

    1984-01-01

    The principles and selected clinical applications of positron emission tomography are described. In this technique a chemical compound is labeled with a positron emitting isotope and its biochemical pathway is traced by coincidence detection of the two annihilation photons. The application of the techniques of computed tomography allows to reconstruct the spatial distribution of the radioactivity within a subject. The 18 F-deoxyglucose method for quantitative measurement of local glucose metabolism is discussed in order to illustrate the possibilities of positron emission tomography to record physiological processes in vivo. (orig.) [de

  7. On some mechanisms of the effect of thermal prehistory on the behavior of silicon parameters under irradiation

    International Nuclear Information System (INIS)

    Nejmash, V.B.; Sagan, T.R.; Tsmots', V.M.; Shakhovtsov, V.I.; Shindich, V.L.

    1991-01-01

    The effect of preliminary thermal treatment (TT) in 400-1200 degC temperature range on the behavior of Si monocrystal parameters under subsequent γ-, electron and neutron irradiation is investigated. Five mechanisms of Si thermal prehistory effect on its properties are proposed: 1) decomposition of solid solutions of impurities interacting with radiation defects (RD); 2) formation of electrically active thermal defects (TD) in concentrations wich are sufficient for a significant alteration of RD charged state; 3) origination of TD, which can efficiency as aresult of the redistribution of impurities under thermal treatment; 5) formation of clusters of electrically active TD, resulting in the disturbance of electric homogeneity of Si crystal

  8. Defect evolution and its impact on the ferromagnetism of Cu-doped ZnO nanocrystals upon thermal treatment: A positron annihilation study

    Science.gov (United States)

    Chen, Zhi-Yuan; Chen, Yuqian; Zhang, Q. K.; Qi, N.; Chen, Z. Q.; Wang, S. J.; Li, P. H.; Mascher, P.

    2017-01-01

    CuO/ZnO nanocomposites with 4 at. % CuO were annealed in air at various temperatures between 100 and 1200 °C to produce Cu-doped ZnO nanocrystals. X-ray diffraction shows that a CuO phase can be observed in the CuO/ZnO nanocomposites annealed at different temperatures, and the Cu-doped ZnO nanocrystals are identified to be of wurtzite structure. The main peak (101) appears at slightly lower diffraction angles with increasing annealing temperature from 400 up to 1200 °C, which confirms the successful doping of Cu into the ZnO lattice above 400 °C. Scanning electron microscopy indicates that most particles in the CuO/ZnO nanocomposites are isolated when annealing at 100-400 °C, but these particles have a tendency to form clusters or aggregates as the annealing temperature increases from 700 to 1000 °C. Positron annihilation measurements reveal a large number of vacancy defects in the interface region of the nanocomposites, and they are gradually recovered with increasing annealing temperature up to 1000 °C. Room-temperature ferromagnetism can be observed in the CuO/ZnO nanocomposites, and the magnetization decreases continuously with increasing annealing temperature. However, there may be several different origins of ferromagnetism in the CuO/ZnO nanocomposites. At low annealing temperatures, the ferromagnetism originates from the CuO nanograins, and the ferromagnetism of CuO nanograins decreases with an increase in the grain size after subsequent higher temperature annealing, which leads to the weakening of ferromagnetism in the CuO/ZnO nanocomposites. After annealing from 400 to 1000 °C, the ferromagnetism gradually vanishes. The ferromagnetism is probably induced by Cu substitution but is mediated by vacancy defects in the CuO/ZnO nanocomposites. The disappearance of ferromagnetism coincides well with the recovery of vacancy defects. It can be inferred that the ferromagnetism is mediated by vacancy defects that are distributed in the interface region.

  9. Positron reemission microscopy

    International Nuclear Information System (INIS)

    Brandes, G.F.; Canter, K.F.; Mills, A.P. Jr.

    1991-01-01

    The positron reemission microscope (PRM), originally proposed by Hulett, Dale and Pendyala, operates on principles fundamentally different from those utilized in existing microscopes and offers sensitivity and contrast not available in conventional microscopes

  10. Solvated Positron Chemistry. II

    DEFF Research Database (Denmark)

    Mogensen, O. E.

    1979-01-01

    The reaction of the hydrated positron, eaq+ with Cl−, Br−, and I− ions in aqueous solutions was studied by means of positron The measured angular correlation curves for [Cl−, e+], [Br−, e+, and [I−, e+] bound states were in good agreement with th Because of this agreement and the fact...... that the calculated positron wavefunctions penetrate far outside the X− ions in the [X−, e+] sta propose that a bubble is formed around the [X−, e+] state, similar to the Ps bubble found in nearly all liquids. F−ions did not react w Preliminary results showed that CN− ions react with eaq+ while OH−ions are non...... in the Cl− case) at higher concentrations. This saturation and the high-concentration effects-in the angular correlation results were interpreted as caused by rather complicated spur effects, wh It is proposed that spur electrons may pick off the positron from the [X−, e+ states with an efficiency which...

  11. Positron annihilation in SiO 2-Si studied by a pulsed slow positron beam

    Science.gov (United States)

    Suzuki, R.; Ohdaira, T.; Uedono, A.; Kobayashi, Y.

    2002-06-01

    Positron and positronium (Ps) behavior in SiO 2-Si have been studied by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The PALS study of SiO 2-Si samples, which were prepared by a dry-oxygen thermal process, revealed that the positrons implanted in the Si substrate and diffused back to the interface do not contribute to the ortho-Ps long-lived component, and the lifetime spectrum of the interface has at least two components. From the AMOC study, the momentum distribution of the ortho-Ps pick-off annihilation in SiO 2, which shows broader momentum distribution than that of crystalline Si, was found to be almost the same as that of free positron annihilation in SiO 2. A varied interface model was proposed to interpret the results of the metal-oxide-semiconductor (MOS) experiments. The narrow momentum distribution found in the n-type MOS with a negative gate bias voltage could be attributed to Ps formation and rapid spin exchange in the SiO 2-Si interface. We have developed a two-dimensional positron lifetime technique, which measures annihilation time and pulse height of the scintillation gamma-ray detector for each event. Using this technique, the positronium behavior in a porous SiO 2 film, grown by a sputtering method, has been studied.

  12. Hydrogen interaction with oxidized Si(111) probed with positrons

    International Nuclear Information System (INIS)

    Lynn, K.G.; Nielsen, B.; Welch, D.O.

    1989-01-01

    A variable-energy positron beam was utilized to study the interface action of hydrogen with Si(111) covered by an ultrahigh-vacuum thermally grown oxide of 2-3 nm thickness. It was observed that positrons implanted at shallow depth (< 100 nm) after diffusion are trapped either at the interface between the oxide and the Si or in the oxide. The positron-annihilation characteristics of these trapped positrons are found to be very sensitive to hydrogen exposure. The momentum distribution of the annihilating positron-electron pair, as observed in the Doppler broadening of the annihilation line, broadens considerably after exposure to hydrogen. The effect recovers after annealing at ≅ 1100 K, suggesting a hydrogen binding at the interface of ∼ 3 ± 0.3 eV. (author). 18 refs., 3 figs

  13. Design of an intense positron source for linear colliders

    International Nuclear Information System (INIS)

    Ida, H.; Yamada, K.; Funahashi, Y.

    1994-01-01

    The Japan Linear Collider (JLC) requires an intense positron source of 8x10 11 particles per rf-pulse. A computer simulation reveals the possibility of such an intense positron source using 'conventional' technology. In order to relax the limitation of the incident electron energy density due to thermal stress in the converter target, the incident beam radius is enlarged within the range so as not to reduce the positron capture efficiency. A pre-damping ring and beam transport system to the pre-damping ring, which have a large transverse acceptance, play important roles for a high capture efficiency. A prototype positron source has been designed and installed at downstream of 1.54 GeV S-band linac in Accelerator Test Facility (ATF) in order to carry out experiments to develop the essential technology for JLC. The simulated results will be tested in experiments with the prototype positron source. (author)

  14. Facile preparation of carbon nanotubes-graphene hybrids and the effect of aspect ratio of carbon nanotubes on electrical and thermal properties of silicone rubber based composites

    Science.gov (United States)

    Zhao, Shizhen; Bai, Lu; Zheng, Junping

    2018-01-01

    Thermal exfoliation, as an effective and easily scalable method, was widely used to produce graphene (GE). In order to prevent the severe stacking of GE sheets after thermal exfoliation process, a facile technique was used to solve this problem through the barrier effect of carbon nanotubes (CNTs). Two kinds of CNTs with different aspect ratios (AR) were taken to prepare CNTs-GE hybrids using this technique, and then the effect of AR of CNTs (namely CNTs-L for low AR and CNTs-H for high AR) in the hybrids on the performance of silicone rubber (SR) composites was investigated. The results indicate that the presence of CNTs can effectively impede the stacking of GE sheets and the hybrids are dispersed uniformly in the SR matrix. With the addition of CNTs-GE hybrids, the resulted SR composites exhibit greatly improved electrical and thermal properties, especially for the composites filled with CNTs-H-GE hybrid. At the hybrids content of 3.0 wt%, the volume resistivity of CNTs-H-GE/SR composite is 5 × 104 Ω cm (about 10 orders of magnitude decrease compared with pure SR). And the thermal conductivity increases by 78% compared to the pure SR. But as for the CNTs-L-GE/SR composite, the corresponding values are 3 × 106 Ω cm and 59%, respectively. In terms of thermal stability, the CNTs-H-GE/SR composite containing 1.0 wt% hybrid exhibits the maximum improvement of initial degradation temperature (419 °C) compared with the CNTs-L-GE/SR composite (393 °C) and pure SR (365 °C).

  15. Positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Sundar, C.S.; Viswanathan, B.

    1996-01-01

    An overview of positron annihilation spectroscopy, the experimental techniques and its application to studies on defects and electronic structure of materials is presented. The scope of this paper is to present the requisite introductory material, that will enable a better appreciation of the subsequent specialized articles on the applications of positron annihilation spectroscopy to investigate various problems in materials science. (author). 31 refs., 3 figs

  16. Positron emission tomography

    International Nuclear Information System (INIS)

    Chandrasekhar, Preethi; Himabindu, Pucha

    2000-01-01

    Positron Emission Tomography (PET) is a non-invasive nuclear imaging technique used to study different molecular pathways and anatomical structures. PET has found extensive applications in various fields of medicine viz. cardiology, oncology, psychiatry/psychology, neuro science and pulmonology. This study paper basically deals with the physics, chemistry and biology behind the PET technique. It discusses the methodology for generation of the radiotracers responsible for emission of positrons and the annihilation and detection techniques. (author)

  17. Positron emission tomography

    International Nuclear Information System (INIS)

    Dvorak, O.

    1989-01-01

    The principle is briefly described of positron emission tomography, and its benefits and constraints are listed. It is emphasized that positron emission tomography (PET) provides valuable information on metabolic changes in the organism that are otherwise only very difficult to obtain, such as brain diagnosis including relationships between mental disorders and the physiology and pathophysiology of the brain. A PET machine is to be installed in Czechoslovakia in the near future. (L.O.)

  18. Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Conde, J.C., E-mail: jconde@uvigo.e [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Martin, E. [Dpto. de Mecanica, Maquinas y Motores Termicos y Fluidos, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Gontad, F.; Chiussi, S. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Fornarini, L. [Enea-Frascati, Via Enrico Fermi 45, I-00044 Frascati (Roma) (Italy); Leon, B. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain)

    2010-02-26

    A Finite Element Method (FEM) study of the coupled thermal-stress during the heteroepitaxial growth induced by excimer laser radiation of patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers deposited on a Si(100) wafer is presented. The ArF (193 nm) excimer laser provides high energy densities during very short laser pulse (20 ns) provoking, at the same time, melting and solidification phenomena in the range of several tenths of nanoseconds. These phenomena play an important role during the growth of heteroepitaxial SiGe structures characterized by high Ge concentration buried under a Si rich surface. In addition, the thermal-stresses that appear before the melting and after the solidification processes can also affect to the epitaxial growth of high quality SiGe alloys in these patterned structures and, in consequence, it is necessary to predict their effects. The aim of this work is to estimate the energy threshold and the corresponding thermal-stresses in the interfaces and the borders of these patterned structures.

  19. Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

    International Nuclear Information System (INIS)

    Conde, J.C.; Martin, E.; Gontad, F.; Chiussi, S.; Fornarini, L.; Leon, B.

    2010-01-01

    A Finite Element Method (FEM) study of the coupled thermal-stress during the heteroepitaxial growth induced by excimer laser radiation of patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers deposited on a Si(100) wafer is presented. The ArF (193 nm) excimer laser provides high energy densities during very short laser pulse (20 ns) provoking, at the same time, melting and solidification phenomena in the range of several tenths of nanoseconds. These phenomena play an important role during the growth of heteroepitaxial SiGe structures characterized by high Ge concentration buried under a Si rich surface. In addition, the thermal-stresses that appear before the melting and after the solidification processes can also affect to the epitaxial growth of high quality SiGe alloys in these patterned structures and, in consequence, it is necessary to predict their effects. The aim of this work is to estimate the energy threshold and the corresponding thermal-stresses in the interfaces and the borders of these patterned structures.

  20. Radiation hard detectors from silicon enriched with both oxygen and thermal donors improvements in donor removal and long-term stability with regard to neutron irradiation

    CERN Document Server

    Li, Z; Eremin, V; Dezillie, B; Chen, W; Bruzzi, M

    2002-01-01

    Detectors made on the silicon wafers with high concentration of thermal donors (TD), which were introduced during the high temperature long time (HTLT) oxygenation procedure, have been investigated in the study of radiation hardness with regard to neutron irradiation and donor removal problems in irradiated high resistivity Si detectors. Two facts have been established as the evidence of radiation hardness improvement of HTLT(TD) Si detectors irradiated below approx 10 sup 1 sup 4 n/cm sup 2 compared to detectors made on standard silicon wafers: the increase of space charge sign inversion fluence (of 1 MeV neutrons) due to lower initial Si resistivity dominated by TD, and the gain in the reverse annealing time constant tau favourable for this material. Coupled with extremely high radiation tolerance to protons observed earlier ('beta zero' behaviour in a wide range of fluence), detectors from HTLT(TD) Si may be unique for application in the experiments with multiple radiations. The changes in the effective sp...

  1. Studies of the dependence on oxidation thermal processes of effects on the electrical properties of silicon detectors by fast neutron radiation

    International Nuclear Information System (INIS)

    Li, Zheng; Kraner, H.W.

    1991-11-01

    High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975 degree C to 1200 degree C) have been exposed to fast neutron irradiation up to the fluence of a few times 10 14 n/cm 2 . New measurement techniques such as capacitance-voltage (C-V) of MOS capacitors and current-voltage (I-V) of back to back diodes (p + -n - - p + if n - is not inverted to p) or resistors (p + -p-p + if inverted) have been introduced in this study in monitoring the possible type-inversion (n→p) under high neutron fluence. No type-inversion in the material underneath SiO 2 and the p + contact has been observed so far in this work for detectors made on the five oxides up to the neutron fluence of a few times 10 13 n/cm 2 . However, it has been found that detectors made on higher temperature oxides (T≤ 1100 degree C) exhibit less leakage current increase at high neutron fluence (φ ≤ 10 13 n/cm 2 )

  2. Si/C composite lithium-ion battery anodes synthesized from coarse silicon and citric acid through combined ball milling and thermal pyrolysis

    International Nuclear Information System (INIS)

    Gu Peng; Cai Rui; Zhou Yingke; Shao Zongping

    2010-01-01

    Silicon and related materials have recently received considerable attention as potential anodes in Li-ion batteries for their high theoretical specific capacities. To overcome the problem of volume variations during the Li insertion/extraction process, in this work, Si/C composites with low carbon content were synthesized from cheap coarse silicon and citric acid by simple ball milling and subsequent thermal treatment. The effects of ball milling time and calcination temperature on the structure, composition and morphology of the composites were systematically investigated by the determination of specific surface area (BET) and particle-size distribution, X-ray diffraction (XRD), O 2 -TPO, and scanning electron microscopy (SEM). The capacity and cycling stability of the composites were systematically evaluated by electrochemical charge/discharge tests. It was found that both the initial capacity and the cycling stability of the composites were dependent on the milling and calcination conditions, and attractive overall electrochemical performance could be obtained by optimizing the synthesis process.

  3. Functionalization of alkyne-terminated thermally hydrocarbonized porous silicon nanoparticles with targeting peptides and antifouling polymers: effect on the human plasma protein adsorption.

    Science.gov (United States)

    Wang, Chang-Fang; Mäkilä, Ermei M; Bonduelle, Colin; Rytkönen, Jussi; Raula, Janne; Almeida, Sérgio; Närvänen, Ale; Salonen, Jarno J; Lecommandoux, Sebastien; Hirvonen, Jouni T; Santos, Hélder A

    2015-01-28

    Porous silicon (PSi) nanomaterials combine a high drug loading capacity and tunable surface chemistry with various surface modifications to meet the requirements for biomedical applications. In this work, alkyne-terminated thermally hydrocarbonized porous silicon (THCPSi) nanoparticles were fabricated and postmodified using five bioactive molecules (targeting peptides and antifouling polymers) via a single-step click chemistry to modulate the bioactivity of the THCPSi nanoparticles, such as enhancing the cellular uptake and reducing the plasma protein association. The size of the nanoparticles after modification was increased from 176 to 180-220 nm. Dextran 40 kDa modified THCPSi nanoparticles showed the highest stability in aqueous buffer. Both peptide- and polymer-functionalized THCPSi nanoparticles showed an extensive cellular uptake which was dependent on the functionalized moieties presented on the surface of the nanoparticles. The plasma protein adsorption study showed that the surface modification with different peptides or polymers induced different protein association profiles. Dextran 40 kDa functionalized THCPSi nanoparticles presented the least protein association. Overall, these results demonstrate that the "click" conjugation of the biomolecules onto the alkyne-terminated THCPSi nanoparticles is a versatile and simple approach to modulate the surface chemistry, which has high potential for biomedical applications.

  4. Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

    International Nuclear Information System (INIS)

    Zhu, X. H.; Defaye, E.; Aied, M.; Guigues, B.; Dubarry, C.

    2009-01-01

    Dielectric properties of Ba 0.7 Sr 0.3 TiO 3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

  5. Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

    Science.gov (United States)

    Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

    2009-07-01

    Dielectric properties of Ba0.7Sr0.3TiO3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

  6. Improving depth resolutions in positron beam spectroscopy by concurrent ion-beam sputtering

    Science.gov (United States)

    John, Marco; Dalla, Ayham; Ibrahim, Alaa M.; Anwand, Wolfgang; Wagner, Andreas; Böttger, Roman; Krause-Rehberg, Reinhard

    2018-05-01

    The depth resolution of mono-energetic positron annihilation spectroscopy using a positron beam is shown to improve by concurrently removing the sample surface layer during positron beam spectroscopy. During ion-beam sputtering with argon ions, Doppler-broadening spectroscopy is performed with energies ranging from 3 keV to 5 keV allowing for high-resolution defect studies just below the sputtered surface. With this technique, significantly improved depth resolutions could be obtained even at larger depths when compared to standard positron beam experiments which suffer from extended positron implantation profiles at higher positron energies. Our results show that it is possible to investigate layered structures with a thickness of about 4 microns with significantly improved depth resolution. We demonstrated that a purposely generated ion-beam induced defect profile in a silicon sample could be resolved employing the new technique. A depth resolution of less than 100 nm could be reached.

  7. Modeling of positron states and annihilation in solids

    International Nuclear Information System (INIS)

    Puska, M.J.

    2003-01-01

    Theoretical models and computational aspects to describe positron states and to predict positron annihilation characteristics in solids are discussed. The comparison of the calculated positron lifetimes, core annihilation lineshapes, and two-dimensional angular correlation maps with experimental results are used in identifying the structure (including the chemical composition) of vacancy-type defects and their development e.g. during thermal annealing. The basis of the modeling is the two-component density-functional theory. The ensuing approximations and the state-of-the-art electronic-structure computation methods enable practical schemes with a quantitative predicting power. (author)

  8. Defects investigation in neutron irradiated reactor steels by positron annihilation

    International Nuclear Information System (INIS)

    Slugen, V.

    2003-01-01

    Positron annihilation spectroscopy (PAS) based on positron lifetime measurements using the Pulsed Low Energy Positron System (PLEPS) was applied to the investigation of defects of irradiated and thermally treated reactor pressure vessel (RPV) steels. PLEPS results showed that the changes in microstructure of the RPV-steel properties caused by neutron irradiation and post-irradiation heat treatment can be well detected. From the lifetime measurements in the near-surface region (20-550 nm) the defect density in Russian types of RPV-steels was calculated using the diffusion trapping model. The post-irradiation heat treatment studies performed on non-irradiated specimens are also presented. (author)

  9. Vortex structures in dense electron-positron-ion plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Haque, Q [Theoretical Plasma Physics Division, PINSTECH, P O Nilore, Islamabad (Pakistan)], E-mail: qamar_haque@hotmail.com

    2009-11-15

    A linear dispersion relation for electrostatic quantum drift and acoustic waves has been found for dense electron-positron-ion magnetoplasmas. Both the fermion and thermal temperature effects have been considered for electrons and positrons. In the nonlinear regime, a stationary solution in the form of dipolar vortices has been obtained. For illustration, the results were applied to the astrophysical plasma of the atmosphere of neutron stars/pulsars.

  10. Positron annihilation at the Si/SiO2 interface

    International Nuclear Information System (INIS)

    Leung, T.C.; Weinberg, Z.A.; Asoka-Kumar, P.; Nielsen, B.; Rubloff, G.W.; Lynn, K.G.

    1992-01-01

    Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO 2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (S int ) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that S int depends directly on holes at interface states or traps at the Si/SiO 2 interface

  11. Three Dimensional Positron Annihilation Momentum Spectroscopy of Lithium Tetraborate Crystals

    Science.gov (United States)

    2013-03-21

    Mount Design 1- I l~"! Ovuq,JQ_ fta ..c~\\ ’"’ r.ont "’ _ , \\.A•r ’fj ::..--", ~,·r ( . ’ •/?..’ ’ ~,..,_ .. {-.J.. n""’’f"’\\..+ ..... N>~ sj...Technique Applied to Measure Oxygen-Atom Defects in 6H Silicon Carbide." AFIT PhD Dissertation. AFIT/DS/ENP/10-M02, ( Mar 2010) [4] Charlton, M., and...University of Michigan Positron Research Website. http://positrons.physics.lsa.umich.edu/current/nanopos/PALS- intro/psitronphysics.htm Accessed 6 Mar

  12. Positron studies in catalysis research

    International Nuclear Information System (INIS)

    1994-01-01

    During the past eight months, the authors have made progress in several areas relevant to the eventual use of positron techniques in catalysis research. They have come closer to the completion of their positron microscope, and at the same time have performed several studies in their non-microscopic positron spectrometer which should ultimately be applicable to catalysis. The current status of the efforts in each of these areas is summarized in the following sections: Construction of the positron microscope (optical element construction, data collection software, and electronic sub-assemblies); Doppler broadening spectroscopy of metal silicide; Positron lifetime spectroscopy of glassy polymers; and Positron lifetime measurements of pore-sizes in zeolites

  13. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  14. The effects of low-energy scattering on positron implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ritley, K.A. (Dept. of Physics and Materials Research Laboratory, Univ. of Illinois, Urbana, IL (United States)); Lynn, K.G.; Ghosh, V.; Welch, D.O. (Brookhaven National Lab., Upton, NY (United States))

    1992-01-01

    Existing Monte Carlo models are capable of simulating the behavior of positrons incident at keV energies, then following the energy loss process to arbitrary final kinetic energies of from 20 eV to 100 eV. This work describes a Monte Carlo simulation of the final stages of positron thermalization in Al, from 25 eV to thermal energies, via the mechanisms of conduction-electron and longitudinal acoustic phonon scattering. The latter stages of thermalization can have important effects on the stopping profiles and mean depth. A novel way to obtain information about positron energy loss by considering the time-evolution of a point-concentration (delta-function distribution) of positrons is described. The effects of a positive positron work function are examined for the first time in the context of a positron Monte Carlo calculation. Finally, some issues relating to the agreement of Monte Carlo calculations with experimental data are discussed. 6 figs., 16 refs.

  15. The effects of low-energy scattering on positron implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ritley, K.A. [Dept. of Physics and Materials Research Laboratory, Univ. of Illinois, Urbana, IL (United States); Lynn, K.G.; Ghosh, V.; Welch, D.O. [Brookhaven National Lab., Upton, NY (United States)

    1992-12-31

    Existing Monte Carlo models are capable of simulating the behavior of positrons incident at keV energies, then following the energy loss process to arbitrary final kinetic energies of from 20 eV to 100 eV. This work describes a Monte Carlo simulation of the final stages of positron thermalization in Al, from 25 eV to thermal energies, via the mechanisms of conduction-electron and longitudinal acoustic phonon scattering. The latter stages of thermalization can have important effects on the stopping profiles and mean depth. A novel way to obtain information about positron energy loss by considering the time-evolution of a point-concentration (delta-function distribution) of positrons is described. The effects of a positive positron work function are examined for the first time in the context of a positron Monte Carlo calculation. Finally, some issues relating to the agreement of Monte Carlo calculations with experimental data are discussed. 6 figs., 16 refs.

  16. Measurement and analysis of thermal conductivity of isotopically controlled silicon layers by time-resolved X-ray scattering

    Energy Technology Data Exchange (ETDEWEB)

    Eon, S.; Frieling, R.; Bracht, H. [Institute for Materials Physics, University of Muenster, 48149 Muenster (Germany); Plech, A. [Institute for Photon Science and Synchrotron Radiation (IPS), 76344 Eggenstein-Leopoldshafen (Germany)

    2016-11-15

    Nanostructuring is considered to be an efficient way to tailor phonon scattering and to reduce the thermal conductivity while keeping good electronic properties. This can be ideally realized by mass modulation of chemical identical elements. In this work, we report measurements of the crossplane thermal conductivity of isotopically modulated {sup 28}Si/{sup 30}Si multilayer structures and of isotopically pure {sup 28}Si layers by means of time-resolved X-ray scattering. Compared to earlier investigations, an improved measurement technique has been applied to determine the cooling behavior of a top gold metal layer after laser excitation with picosecond time resolution until thermal equilibration is established. Detailed analysis of the cooling behavior not only confirms a reduced thermal conductivity of {sup 28}Si/{sup 30}Si multilayer structures compared to natural and isotopically enriched {sup 28}Si layers but also provides evidence of direct laser heating of the Si layer. This and extrinsic effects affecting the cooling behavior of the gold layer are taken into account to determine the thermal conductivity by means of the pump-and-probe measurement technique. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Effects of thermal budget in n-type bifacial solar cell fabrication processes on effective lifetime of crystalline silicon

    Directory of Open Access Journals (Sweden)

    Tomihisa Tachibana

    2017-04-01

    Full Text Available The effects of residual C on cell properties are investigated from the view point of thermal budget in the n-type bifacial cell processes. Implied Voc obtained from wafers with same Oi concentration depend on the thermal budgets decreases as the Cs concentration increases. The Voc values vary depending on the wafer with different growth cooling rate. To analyze the effect of thermal budget correspond to solar cell fabrication process, CZ wafers with almost the same Oi concentrations are prepared. One of the wafers with relatively high residual Cs concentration shows the longer lifetime than the initial value after the 950 oC annealing step. On the other hand, the lifetime of a wafer with relatively low Cs concentration dramatically decreased by the same process due to the O segregation. These results suggest that it is important to choose appropriate wafer specification, starting with feedstock material, for increasing the solar cell efficiency.

  18. Thermal effects on the mechanical properties of SiC fibre reinforced reaction-bonded silicon nitride matrix composites

    Science.gov (United States)

    Bhatt, R. T.; Phillips, R. E.

    1990-01-01

    The elevated temperature four-point flexural strength and the room temperature tensile and flexural strength properties after thermal shock were measured for ceramic composites consisting of 30 vol pct uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The elevated temperature strengths were measured after 15 min of exposure in air at temperatures to 1400 C. Thermal shock treatment was accomplished by heating the composite in air for 15 min at temperatures to 1200 C and then quenching in water at 25 C. The results indicate no significant loss in strength properties either at temperature or after thermal shock when compared with the strength data for composites in the as-fabricated condition.

  19. Positron emission tomography

    International Nuclear Information System (INIS)

    Yamamoto, Y.L.; Thompson, C.J.; Diksic, M.; Meyer, E.; Feindel, W.H.

    1984-01-01

    One of the most exciting new technologies introduced in the last 10 yr is positron emission tomography (PET). PET provides quantitative, three-dimensional images for the study of specific biochemical and physiological processes in the human body. This approach is analogous to quantitative in-vivo autoradiography but has the added advantage of permitting non-invasive in vivo studies. PET scanning requires a small cyclotron to produce short-lived positron emitting isotopes such as oxygen-15, carbon-11, nitrogen-13 and fluorine-18. Proper radiochemical facilities and advanced computer equipment are also needed. Most important, PET requires a multidisciplinary scientific team of physicists, radiochemists, mathematicians, biochemists and physicians. The most recent trends are reviewed in the imaging technology, radiochemistry, methodology and clinical applications of positron emission tomography. (author)

  20. Digital positron annihilation spectrometer

    International Nuclear Information System (INIS)

    Cheng Bin; Weng Huimin; Han Rongdian; Ye Bangjiao

    2010-01-01

    With the high speed development of digital signal process, the technique of the digitization and processing of signals was applied in the domain of a broad class of nuclear technique. The development of digital positron lifetime spectrometer (DPLS) is more promising than the conventional positron lifetime spectrometer equipped with nuclear instrument modules. And digital lifetime spectrometer has many advantages, such as low noise, long term stability, flexible online or offline digital processing, simple setup, low expense, easy to setting, and more physical information. Digital constant fraction discrimination is for timing. And a new method of optimizing energy windows setting for digital positron lifetime spectrometer is also developed employing the simulated annealing for the convenient use. The time resolution is 220ps and the count rate is 200cps. (authors)

  1. The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy

    Science.gov (United States)

    Pang, Jinbiao; Li, Hui; Zhou, Kai; Wang, Zhu

    2012-07-01

    An analysis program for positron annihilation lifetime spectra is only applicable to isolated defects, but is of no use in the presence of defective correlations. Such limitations have long caused problems for positron researchers in their studies of complicated defective systems. In order to solve this problem, we aim to take a semiconductor material, for example, to achieve a credible average lifetime of single crystal silicon under plastic deformation at different temperatures using positron life time spectroscopy. By establishing reasonable positron trapping models with defective correlations and sorting out four lifetime components with multiple parameters, as well as their respective intensities, information is obtained on the positron trapping centers, such as the positron trapping rates of defects, the density of the dislocation lines and correlation between the dislocation lines, and the vacancy defects, by fitting with the average lifetime with the aid of Matlab software. These results give strong grounds for the existence of dislocation-vacancy correlation in plastically deformed silicon, and lay a theoretical foundation for the analysis of positron lifetime spectra when the positron trapping model involves dislocation-related defects.

  2. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  3. 50 years of positrons

    International Nuclear Information System (INIS)

    Anon.

    1982-01-01

    This year marks the 50th anniversary of one of the major landmarks of modern physics - the discovery of the positron, the antimatter counterpart of the electron. This provided the first evidence for antimatter, and it was also unprecedented for the existence of a new particle to have been predicted by theory. The positron and the concepts behind it were to radically change our picture of Nature. It led to the rapid advancement or our understanding, culminating some fifteen years later with the formulation of quantum electrodynamics as we now know it. (orig./HSI).

  4. Positron emission tomography

    CERN Document Server

    Paans, A M J

    2006-01-01

    Positron Emission Tomography (PET) is a method for measuring biochemical and physiological processes in vivo in a quantitative way by using radiopharmaceuticals labelled with positron emitting radionuclides such as 11C, 13N, 15O and 18F and by measuring the annihilation radiation using a coincidence technique. This includes also the measurement of the pharmacokinetics of labelled drugs and the measurement of the effects of drugs on metabolism. Also deviations of normal metabolism can be measured and insight into biological processes responsible for diseases can be obtained. At present the combined PET/CT scanner is the most frequently used scanner for whole-body scanning in the field of oncology.

  5. The MEG positron spectrometer

    International Nuclear Information System (INIS)

    Nishiguchi, Hajime

    2007-01-01

    We have been developing an innovative spectrometer for the MEG experiment at the Paul Scherrer Institute (PSI) in Switzerland. This experiment searches for a lepton flavour violating decay μ + →e + γ with a sensitivity of 10 -13 in order to explore the region predicted by supersymmetric extensions of the standard model. The MEG positron spectrometer consists of a specially designed superconducting solenoidal magnet with a highly graded field, an ultimate low-mass drift chamber system, and a precise time measuring counter system. This innovative positron spectrometer is described here focusing on the drift chamber system

  6. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  7. Process for making silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  8. LLNL pure positron plasma program

    International Nuclear Information System (INIS)

    Hartley, J.H.; Beck, B.R.; Cowan, T.E.; Howell, R.H.; McDonald, J.L.; Rohatgi, R.R.; Fajans, J.; Gopalan, R.

    1995-01-01

    Assembly and initial testing of the Positron Time-of-Flight Trap at the Lawrence Livermore National Laboratory (LLNL) Increase Pulsed Positron Facility has been completed. The goal of the project is to accumulate at high-density positron plasma in only a few seconds., in order to facilitate study that may require destructive diagnostics. To date, densities of at least 6 x 10 6 positrons per cm 3 have been achieved

  9. Thermal and mechanical properties of the Zr53Cu30Ni9Al8 based bulk metallic glass microalloyed with silicon

    International Nuclear Information System (INIS)

    Jang, Jason S.C.; Jian, S.R.; Chang, C.F.; Chang, L.J.; Huang, Y.C.; Li, T.H.; Huang, J.C.; Liu, C.T.

    2009-01-01

    The amorphous alloy rods of (Zr 53 Cu 30 Ni 9 Al 8 ) 100-x Si x (x = 0.25, 0.5, 0.75, 1) with a diameter of 2-6 mm were prepared by drop casting method in an Ar atmosphere. The thermal properties, including glass forming ability (GFA) and thermal stability during isothermal annealing of these amorphous alloys, and the mechanical properties have been systematic investigated by the combination of DSC, XRD, SEM, TEM, and compression test. The result of X-ray diffraction reveals that these entire (Zr 53 Cu 30 Ni 9 Al 8 ) 100-x Si x alloy rods exhibit a typical amorphous diffraction pattern with only a broad maximum around 2θ around 40 degree. Both T g (glass transition temperature) and T x (crystallization temperature) of these (Zr 53 Cu 30 Ni 9 Al 8 ) 100-x Si x alloys increase with the silicon addition. In addition, both the activation energy of crystallization and the incubation time of isothermal annealing these (Zr 53 Cu 30 Ni 9 Al 8 ) 100-x Si x amorphous alloys indicate that the (Zr 53 Cu 30 Ni 9 Al 8 ) 99.25 Si 0.75 alloy possesses the best thermal stability in the (Zr 53 Cu 30 Ni 9 Al 8 ) 100-x Si x alloy system. In parallel, the result of compression test shows that the yield strength increases with the addition of Si content and reaches to a maximum value about 1750 MPa with 3% plastic strain for the (Zr 53 Cu 30 Ni 9 Al 8 ) 99.25 Si 0.75 amorphous alloy.

  10. Positron annihilation in superconducting 123 compounds

    International Nuclear Information System (INIS)

    Peter, M.; Manuel, A.A.; Erb, A.

    1998-01-01

    After a brief review of the theory of angular correlation of positron annihilation radiation (ACAR), the authors illustrate experimental principles and give examples of successful determination of electron momentum density (EMD) and of positron lifetime in solids. The central question which the authors try to answer concerns the contribution of positron spectroscopy to the knowledge and understanding of the new high temperature superconducting oxides. They find that in these oxides also, partially filled bands exist and they can observe parts of their Fermi surface and measure lifetimes in accordance with band theoretical calculations. There are characteristic differences, however. The intensity of the anisotropy of the ACAR signal is below theoretical expectation and signals depend on sample preparation. Recent studies by the Geneva group have concerned dependence of the signals on impurities, on oxygen content and on the thermal history of preparation. Of particular interest are correlations between the variations of these signals and between the variations of structural and transport properties in these substances. Besides deliberate additions of impurities, the Geneva group also reports progress in the preparations of samples of highest purity (barium zirconate crucibles). The alloy series Pr x Y 1-x Ba 2 Cu 3 O 7-δ is of special interest because of exceptional transport properties. The recent positron results on these materials will be presented and commented in the light of theoretical models and in the light of the reported superconductivity of the Pr-compound

  11. Positron annihilation near fractal surfaces

    International Nuclear Information System (INIS)

    Lung, C.W.; Deng, K.M.; Xiong, L.Y.

    1991-07-01

    A model for positron annihilation in the sub-surface region near a fractal surface is proposed. It is found that the power law relationship between the mean positron implantation depth and incident positron energy can be used to measure the fractal dimension of the fractal surface in materials. (author). 10 refs, 2 figs

  12. Positron depth profiling

    International Nuclear Information System (INIS)

    Coleman, P.

    2001-01-01

    Wide-ranging studies of defects below the surface of semiconductor structures have been performed at the University of Bath, in collaboration with the University of Surrey Centre for Ion Beam Applications and with members of research teams at a number of UK universities. Positron implantation has been used in conjunction with other spectroscopies such as RBS-channeling and SIMS, and electrical characterisation methods. Research has ranged from the development of a positron-based technique to monitor the in situ annealing of near-surface open-volume defects to the provision of information on defects to comprehensive diagnostic investigations of specific device structures. We have studied Si primarily but not exclusively; e.g., we have investigated ion-implanted SiC and SiO 2 /GaAs structures. Of particular interest are the applications of positron annihilation spectroscopy to ion-implanted semiconductors, where by linking ion dose to vacancy-type defect concentration one can obtain information on ion dose and uniformity with a sensitivity not achievable by standard techniques. A compact, user-friendly positron beam system is currently being developed at Bath, in collaboration with SCRIBA, with the intention of application in an industrial environment. (orig.)

  13. Positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Lindback, Stig [GEMS PET Systems AB, Uppsala (Sweden)

    1995-07-15

    Positron Emission Tomography (PET) is an advanced nuclear medicine technique used for research at major centres. Unique diagnostic information is obtained from tomographic measurements of the biochemistry and physiology of tissues and organs. In theory, diseases are related to biochemical changes and these can be observed with PET long before any anatomical changes are detectable. In PET the radioactive component is a positron-emitting isotope or 'tracer'. The positrons annihilate with electrons in the body to produce two gamma rays 180° apart; coincidence detection of these gammas provides a very efficient method of determining the spatial distribution of the radioisotope tracer. Because physiological measurements are usually required in a single imaging session, very short-lived isotopes are used to label the tracer molecules; isotope production and labelling is usually carried out in situ. The most commonly used radionuclides are carbon- 11 (half-life 20 minutes), nitrogen-13 (10 minutes), oxygen-15 (2 minutes), and fluorine-18 (110 minutes). A PET system has three major components: - a particle accelerator with targets for production of the positron-emitting isotopes; - chemistry modules for synthesis and labelling of the desired tracers; - and a PET camera for in-vivo measurements of the distribution of the tracer in the body.

  14. Positron emission tomography

    International Nuclear Information System (INIS)

    Pavuk, M.

    2003-12-01

    The aim of this project is to provide a simple summary of new trends in positron emission tomography and its basic physical principles. It provides thereby compendious introduction of the trends of the present development in diagnostics using PET systems. A review of available literature was performed. (author)

  15. Positron emission tomography. Positronemisionstomografi

    Energy Technology Data Exchange (ETDEWEB)

    Bolwig, T G; Haunsoe, S; Dahlgaard Hove, J; Hesse, B; Hoejgard, L; Jensen, M; Paulson, O B; Hastrup Svendsen, J; Soelvsten Soerensen, S

    1994-10-01

    Positron emission tomography (PET) is a method for quantitative imaging of regional physiological and biochemical parameters. Positron emitting radioactive isotopes can be produced by a cyclotron, eg. the biologically important carbon ([sup 11]C), oxygen ([sup 15]O), and nitrogen ([sup 13]N) elements. With the tomographic principles of the PET scanner the quantitative distribution of the administered isotopes can be determined and images can be provided as well as dynamic information on blood flow, metabolism and receptor function. In neurology PET has been used for investigations on numerous physiological processes in the brain: circulation, metabolism and receptor studies. In Parkinson's disease PET studies have been able to localize the pathology specifically, and in early stroke PET technique can outline focal areas with living but non-functioning cells, and this could make it possible to intervene in this early state. With positron emission tomography a quantitative evaluation of myocardial blood flow, glucose and fatty acid metabolism can be made as well as combined assessments of blood flow and metabolism. Combined studies of blood flow and metabolism can determine whether myocardial segments with abnormal motility consist of necrotic or viable tissue, thereby delineating effects of revascularisation. In the future it will probably be possible to characterize the myocardial receptor status in different cardiac diseases. The PET technique is used in oncology for clinical as well as more basic research on tumor perfusion and metabolism. Further, tumor uptake of positron labelled cytotoxic drugs might predict the clinical benefit of treatment. (au) (19 refs.).

  16. Cardiac positron tomography

    International Nuclear Information System (INIS)

    Geltmann, E.M.; Roberts, R.; Sobel, B.E.

    1980-01-01

    Positron emission tomography (PET) performed after the administration of the positron-emitting radionuclides carbon-11 ( 11 C), nitrogen-13 ( 13 N), oxygen-15 ( 15 O) and fluorine-18 ( 18 F) has permitted the improved noninvasive assessment of the regional myocardial metabolism of normal physiologic substrates and intermediates and their cogeners. In experimental animals, the rate of oxidation of 11 C-palmitate correlates closely with other indexes of oxygen consumption, and the extraction of 11 C-palmitate (like that of 18 F-fatty acids and 18 F-fluoredoxyglucose) ist markedly diminished in regions of myocardial ischemia. In both experimental animals and in patients, myocardial infarct site and size, determined by positron emission tomography after the intravenous injection of 11 C-palmitate, correlate closely with the electrocardiographic infarct locus and enzymatically estimated infarct size as well as with the location and extent of regional left ventricular wall motion abnormalities. PET offers promise for assessment of flow as well despite the complexities involved. PET with 13 NH 3 appears to provide one useful qualitative index, although this tracer ist actively metabolized. Because of the quantitative capabilities of positron emission tomography and the rapid progress which is being made in the development of fast scan, multi-slice, and gated instrumentation, this technique is likely to facilitate improved understanding and characterization of regional myocardial metabolism and blood flow in man under physiological and pathophysiological conditions. (orig.) [de

  17. Positron emission tomography

    International Nuclear Information System (INIS)

    Lindback, Stig

    1995-01-01

    Positron Emission Tomography (PET) is an advanced nuclear medicine technique used for research at major centres. Unique diagnostic information is obtained from tomographic measurements of the biochemistry and physiology of tissues and organs. In theory, diseases are related to biochemical changes and these can be observed with PET long before any anatomical changes are detectable. In PET the radioactive component is a positron-emitting isotope or 'tracer'. The positrons annihilate with electrons in the body to produce two gamma rays 180° apart; coincidence detection of these gammas provides a very efficient method of determining the spatial distribution of the radioisotope tracer. Because physiological measurements are usually required in a single imaging session, very short-lived isotopes are used to label the tracer molecules; isotope production and labelling is usually carried out in situ. The most commonly used radionuclides are carbon- 11 (half-life 20 minutes), nitrogen-13 (10 minutes), oxygen-15 (2 minutes), and fluorine-18 (110 minutes). A PET system has three major components: - a particle accelerator with targets for production of the positron-emitting isotopes; - chemistry modules for synthesis and labelling of the desired tracers; - and a PET camera for in-vivo measurements of the distribution of the tracer in the body

  18. Positron emission tomography

    International Nuclear Information System (INIS)

    Bolwig, T.G.; Haunsoe, S.; Dahlgaard Hove, J.; Hesse, B.; Hoejgard, L.; Jensen, M.; Paulson, O.B.; Hastrup Svendsen, J.; Soelvsten Soerensen, S.

    1994-01-01

    Positron emission tomography (PET) is a method for quantitative imaging of regional physiological and biochemical parameters. Positron emitting radioactive isotopes can be produced by a cyclotron, eg. the biologically important carbon ( 11 C), oxygen ( 15 O), and nitrogen ( 13 N) elements. With the tomographic principles of the PET scanner the quantitative distribution of the administered isotopes can be determined and images can be provided as well as dynamic information on blood flow, metabolism and receptor function. In neurology PET has been used for investigations on numerous physiological processes in the brain: circulation, metabolism and receptor studies. In Parkinson's disease PET studies have been able to localize the pathology specifically, and in early stroke PET technique can outline focal areas with living but non-functioning cells, and this could make it possible to intervene in this early state. With positron emission tomography a quantitative evaluation of myocardial blood flow, glucose and fatty acid metabolism can be made as well as combined assessments of blood flow and metabolism. Combined studies of blood flow and metabolism can determine whether myocardial segments with abnormal motility consist of necrotic or viable tissue, thereby delineating effects of revascularisation. In the future it will probably be possible to characterize the myocardial receptor status in different cardiac diseases. The PET technique is used in oncology for clinical as well as more basic research on tumor perfusion and metabolism. Further, tumor uptake of positron labelled cytotoxic drugs might predict the clinical benefit of treatment. (au) (19 refs.)

  19. Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon.

    Science.gov (United States)

    Fisicaro, G; Pelaz, L; Lopez, P; La Magna, A

    2012-09-01

    Pulsed laser irradiation of damaged solids promotes ultrafast nonequilibrium kinetics, on the submicrosecond scale, leading to microscopic modifications of the material state. Reliable theoretical predictions of this evolution can be achieved only by simulating particle interactions in the presence of large and transient gradients of the thermal field. We propose a kinetic Monte Carlo (KMC) method for the simulation of damaged systems in the extremely far-from-equilibrium conditions caused by the laser irradiation. The reference systems are nonideal crystals containing point defect excesses, an order of magnitude larger than the equilibrium density, due to a preirradiation ion implantation process. The thermal and, eventual, melting problem is solved within the phase-field methodology, and the numerical solutions for the space- and time-dependent thermal field were then dynamically coupled to the KMC code. The formalism, implementation, and related tests of our computational code are discussed in detail. As an application example we analyze the evolution of the defect system caused by P ion implantation in Si under nanosecond pulsed irradiation. The simulation results suggest a significant annihilation of the implantation damage which can be well controlled by the laser fluence.

  20. High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

    International Nuclear Information System (INIS)

    Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

    1988-01-01

    A rapid thermal anneal (RTA) in an NH 3 ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 0 C in NH 3 and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (≥1000 0 C) RTA in Ar completely converted W into the low resistivity (31 μΩ cm) tetragonal WSi 2 phase. In contrast, after a prior 900 0 C RTA in NH 3 , N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi 2 formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 0 C NH 3 anneal. The NH 3 -treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 0 C, at which point some increase in contact resistance was measured

  1. High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

    Energy Technology Data Exchange (ETDEWEB)

    Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

    1988-12-15

    A rapid thermal anneal (RTA) in an NH/sub 3/ ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 /sup 0/C in NH/sub 3/ and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (greater than or equal to1000 /sup 0/C) RTA in Ar completely converted W into the low resistivity (31 ..mu cap omega.. cm) tetragonal WSi/sub 2/ phase. In contrast, after a prior 900 /sup 0/C RTA in NH/sub 3/, N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi/sub 2/ formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 /sup 0/C NH/sub 3/ anneal. The NH/sub 3/-treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 /sup 0/C, at which point some increase in contact resistance was measured.

  2. Channeling and coherent bremsstrahlung effects for relativistic positrons and electrons

    International Nuclear Information System (INIS)

    Walker, R.L.

    1976-01-01

    Channeling of positrons in single crystals of silicon was observed in transmission and scattering measurements for incident energies from 16 to 28 MeV. In addition, the spectral dependence upon crystal orientation of the forward coherent bremsstrahlung produced by beams of 28-MeV positrons and electrons incident upon a 5 μm thick single crystal of silicon was measured with a NaI photon spectrometer. Effects of channeling and perhaps of the nonvalidity of the first Born approximation were observed for beam directions near the [111] axis of the crystal, and coherent peaks near 0.5 MeV were observed for a compound interference direction, in agreement with first-order theoretical calculations. 32 fig

  3. Probing the defects in nano-semiconductors using positrons

    Energy Technology Data Exchange (ETDEWEB)

    Nambissan, P M G, E-mail: pmg.nambissan@saha.ac.in [Nuclear and Atomic Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India)

    2011-01-10

    Positron annihilation spectroscopy (PAS) is a very useful tool to study the defect properties of nanoscale materials. The ability of thermalized positrons to diffuse over to the surfaces of nanocrystallites prior to annihilation helps to explore the disordered atomic arrangement over there and is very useful in understanding the structure and properties of nanomaterials. As examples, the results of studies on FeS{sub 2} nanorods and ZnS nanoparticles are presented. In semiconductor nanoparticles, there are positron trapping sites within the grains also and these are characterised by using appropriate models on the measured positron lifetimes. We have observed vivid changes in the measured positron lifetimes and Doppler broadened gamma ray spectral lineshapes during structural transformations prompted by substitutional effects in Mn{sup 2+}-doped ZnS nanorods. Interestingly, the nanoparticles did not exhibit the transformation, implying the morphologies of the nanosystems playing a decisive role. Quantum confinement effect in CdS nanoparticles was another phenomenon that could be seen through positron annihilation experiments. Coincidence Doppler broadening measurements have been useful to identify the elemental environment around the vacancy clusters that trap positrons. Recent studies on nanocrystalline oxide and sulphide semiconductors are also discussed.

  4. Probing the defects in nano-semiconductors using positrons

    International Nuclear Information System (INIS)

    Nambissan, P M G

    2011-01-01

    Positron annihilation spectroscopy (PAS) is a very useful tool to study the defect properties of nanoscale materials. The ability of thermalized positrons to diffuse over to the surfaces of nanocrystallites prior to annihilation helps to explore the disordered atomic arrangement over there and is very useful in understanding the structure and properties of nanomaterials. As examples, the results of studies on FeS 2 nanorods and ZnS nanoparticles are presented. In semiconductor nanoparticles, there are positron trapping sites within the grains also and these are characterised by using appropriate models on the measured positron lifetimes. We have observed vivid changes in the measured positron lifetimes and Doppler broadened gamma ray spectral lineshapes during structural transformations prompted by substitutional effects in Mn 2+ -doped ZnS nanorods. Interestingly, the nanoparticles did not exhibit the transformation, implying the morphologies of the nanosystems playing a decisive role. Quantum confinement effect in CdS nanoparticles was another phenomenon that could be seen through positron annihilation experiments. Coincidence Doppler broadening measurements have been useful to identify the elemental environment around the vacancy clusters that trap positrons. Recent studies on nanocrystalline oxide and sulphide semiconductors are also discussed.

  5. Probing the defects in nano-semiconductors using positrons

    Science.gov (United States)

    Nambissan, P. M. G.

    2011-01-01

    Positron annihilation spectroscopy (PAS) is a very useful tool to study the defect properties of nanoscale materials. The ability of thermalized positrons to diffuse over to the surfaces of nanocrystallites prior to annihilation helps to explore the disordered atomic arrangement over there and is very useful in understanding the structure and properties of nanomaterials. As examples, the results of studies on FeS2 nanorods and ZnS nanoparticles are presented. In semiconductor nanoparticles, there are positron trapping sites within the grains also and these are characterised by using appropriate models on the measured positron lifetimes. We have observed vivid changes in the measured positron lifetimes and Doppler broadened gamma ray spectral lineshapes during structural transformations prompted by substitutional effects in Mn2+-doped ZnS nanorods. Interestingly, the nanoparticles did not exhibit the transformation, implying the morphologies of the nanosystems playing a decisive role. Quantum confinement effect in CdS nanoparticles was another phenomenon that could be seen through positron annihilation experiments. Coincidence Doppler broadening measurements have been useful to identify the elemental environment around the vacancy clusters that trap positrons. Recent studies on nanocrystalline oxide and sulphide semiconductors are also discussed.

  6. Design and Thermal Analysis for Irradiation of Pyrolytic Carbon/Silicon Carbide Diffusion Couples in the High Flux Isotope Reactor

    Energy Technology Data Exchange (ETDEWEB)

    Gerczak, Tyler J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Smith, Kurt R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Petrie, Christian M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-08-01

    Tristructural-isotropic (TRISO)–coated particle fuel is a promising advanced fuel concept consisting of a spherical fuel kernel made of uranium oxide and uranium carbide, surrounded by a porous carbonaceous buffer layer and successive layers of dense inner pyrolytic carbon (IPyC), silicon carbide (SiC) deposited by chemical vapor , and dense outer pyrolytic carbon (OPyC). This fuel concept is being considered for advanced reactor applications such as high temperature gas-cooled reactors (HTGRs) and molten salt reactors (MSRs), as well as for accident-tolerant fuel for light water reactors (LWRs). Development and implementation of TRISO fuel for these reactor concepts support the US Department of Energy (DOE) Office of Nuclear Energy mission to promote safe, reliable nuclear energy that is sustainable and environmentally friendly. During operation, the SiC layer serves as the primary barrier to metallic fission products and actinides not retained in the kernel. It has been observed that certain fission products are released from TRISO fuel during operation, notably, Ag, Eu, and Sr [1]. Release of these radioisotopes causes safety and maintenance concerns.

  7. High current pulsed positron microprobe

    International Nuclear Information System (INIS)

    Howell, R.H.; Stoeffl, W.; Kumar, A.; Sterne, P.A.; Cowan, T.E.; Hartley, J.

    1997-01-01

    We are developing a low energy, microscopically focused, pulsed positron beam for defect analysis by positron lifetime spectroscopy to provide a new defect analysis capability at the 10 10 e + s -l beam at the Lawrence Livermore National Laboratory electron linac. When completed, the pulsed positron microprobe will enable defect specific, 3-dimensional maps of defect concentrations with sub-micron resolution of defect location. By coupling these data with first principles calculations of defect specific positron lifetimes and positron implantation profiles we will both map the identity and concentration of defect distributions

  8. Application of positron annihilation spectroscopy for investigation of reactor steels

    International Nuclear Information System (INIS)

    Sojak, S.; Slugen, V.; Petriska, M.; Stacho, M.; Veternikova, J.; Sabelova, V.; Egger, W.; Ravelli, L.

    2013-01-01

    Our work is focused on the study of radiation damage simulated by ion implantations and thermal treatment evaluation of RAFM steels in the form of binary Fe-Cr model alloys. In order to study the microstructure recovery after ion irradiation, we applied an approach for restoration of initial physical and mechanical characteristics of structural materials in the form of thermal annealing, with the goal to decrease the size and amount of accumulated defects. The experimental analysis of material damage at microstructural level was performed by the pulsed low energy positron system (PLEPS) [1] at the high intensity positron source NEPOMUC at the Munich research reactor FRM-II. (authors)

  9. Positron annihilation study on ZnO-based scintillating glasses

    Science.gov (United States)

    Nie, Jiaxiang; Yu, Runsheng; Wang, Baoyi; Ou, Yuwen; Zhong, Yurong; Xia, Fang; Chen, Guorong

    2009-04-01

    Positron lifetime of ZnO-based scintillating glasses (55 - x)SiO 2-45ZnO- xBaF 2 ( x = 5, 10, 15 mol%) were measured with a conventional fast-fast spectrometer. Three positron lifetime components τ1, τ 2, and τ3 are ˜0.23 ns, ˜0.45 ns, and ˜1.6 ns, respectively. All the three positron lifetime components first increase with increasing BaF 2 concentration from 5 mol% to 10 mol%, then decreases as BaF 2 further increases to 15 mol%. The result suggests that the glass sample with 10 mol% BaF 2 contains the highest defect density, and is in excellent agreement with glass chemistry, glass density, thermal properties, and calculated crystallinity. Therefore, positron annihilation lifetime measurement is an effective tool for analyzing defects in ZnO-based scintillating glasses.

  10. Thermal transport across metal silicide-silicon interfaces: First-principles calculations and Green's function transport simulations

    Science.gov (United States)

    Sadasivam, Sridhar; Ye, Ning; Feser, Joseph P.; Charles, James; Miao, Kai; Kubis, Tillmann; Fisher, Timothy S.

    2017-02-01

    Heat transfer across metal-semiconductor interfaces involves multiple fundamental transport mechanisms such as elastic and inelastic phonon scattering, and electron-phonon coupling within the metal and across the interface. The relative contributions of these different transport mechanisms to the interface conductance remains unclear in the current literature. In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi2-Si interfaces. An important development in the present work is the direct computation of interfacial bonding from density functional perturbation theory (DFPT) and hence the avoidance of commonly used "mixing rules" to obtain the cross-interface force constants from bulk material force constants. Another important algorithmic development is the integration of the recursive Green's function (RGF) method with Büttiker probe scattering that enables computationally efficient simulations of inelastic phonon scattering and its contribution to the thermal interface conductance. First-principles calculations of electron-phonon coupling reveal that cross-interface energy transfer between metal electrons and atomic vibrations in the semiconductor is mediated by delocalized acoustic phonon modes that extend on both sides of the interface, and phonon modes that are localized inside the semiconductor region of the interface exhibit negligible coupling with electrons in the metal. We also provide a direct comparison between simulation predictions and experimental measurements of thermal interface conductance of epitaxial CoSi2-Si interfaces using the time-domain thermoreflectance technique. Importantly, the experimental results, performed across a wide temperature range, only agree well with

  11. Thermal stability of the optical band gap and structural order in hot-wire-deposited amorphous silicon

    CSIR Research Space (South Africa)

    Arendse, CJ

    2009-01-01

    Full Text Available . Cardona, J. J. Cuomo, Phys. Rev. B 16 (1977) 3556 14. H. Shanks, C.J. Fang, L. Ley, M. Cardona, F.J. Desmond, S. Kalbitzer, Phys. Status Solidi B 100 (1980) 43 15. A.M. Brockhoff, Ph.D. thesis, Utrecht University, Utrecht, The Netherlands, 2001 16. D... stream_source_info Arendse_d2_2009.pdf.txt stream_content_type text/plain stream_size 12859 Content-Encoding UTF-8 stream_name Arendse_d2_2009.pdf.txt Content-Type text/plain; charset=UTF-8 1 Thermal stability...

  12. Positron scattering and annihilation from hydrogenlike ions

    International Nuclear Information System (INIS)

    Novikov, S.A.; Bromley, M.W.J.; Mitroy, J.

    2004-01-01

    The Kohn variational method is used with a configuration-interaction-type wave function to determine the J=0 and J=1 phase shifts and annihilation parameter Z eff for positron-hydrogenic ion scattering. The phase shifts are within 1-2% of the best previous calculations. The values of Z eff are small and do not exceed unity for any of the momenta considered. At thermal energies Z eff is minute with a value of order 10 -50 occurring for He + at k=0.05a 0 -1 . In addition to the variational calculations, analytic expressions for the phase shift and annihilation parameters within the Coulomb wave Born approximation are derived and used to help elucidate the dynamics of positron collisions with positive ions

  13. Knudsen pump produced via silicon deep RIE, thermal oxidation, and anodic bonding processes for on-chip vacuum pumping

    Science.gov (United States)

    Van Toan, Nguyen; Inomata, Naoki; Trung, Nguyen Huu; Ono, Takahito

    2018-05-01

    This work describes the fabrication and evaluation of the Knudsen pump for on-chip vacuum pumping that works based on the principle of a thermal transpiration. Three AFM (atomic force microscope) cantilevers are integrated into small chambers with a size of 5 mm  ×  3 mm  ×  0.4 mm for the pump’s evaluation. Knudsen pump is fabricated using deep RIE (reactive ion etching), wet thermal oxidation and anodic bonding processes. The fabricated device is evaluated by monitoring the quality (Q) factor of the integrated cantilevers. The Q factor of the cantilever is increased from 300 -1150 in cases without and with a temperature difference approximately 25 °C between the top (the hot side at 40 °C) and bottom (the cold side at 15 °C) sides of the fabricated device, respectively. The evacuated chamber pressure of around 10 kPa is estimated from the Q factor of the integrated cantilevers.

  14. A thermal-driven silicon micro xy-stage integrated with piezoresistive sensors for nano-positioning

    International Nuclear Information System (INIS)

    Choi, Young-Soo; Zhang, Yan; Lee, Dong-Weon

    2012-01-01

    This paper describes a novel micro xy-stage, driven by double-hot arm horizontal thermal micro-actuators integrated with a piezoresistive sensor (PS) for low-voltage operation and precise control. This micro xy-stage structure is linked with chevron beams and optimized to amplify the displacement generated by the micro-actuators that provide a pull force to the movable platform. The PS employed for in situ displacement detection and feedback control is fabricated at the base of a cold arm, which minimizes the influence of temperature change induced by electro-thermal heating. The micro xy-stage structure is defined through the use of a simple micromachining process, released by backside wet etching with a special tool. For an input power of approximately 44 mW, each chevron actuator provides about 16 µm and the total displacement of the platform is close to 32 µm. The sensitivity of the PS is better than 1 mV µm −1 , obtained from the amplified voltage output of the Wheatstone bridge circuit. The potential applications of the proposed micro xy-stage lie in micro- or nano-manipulation, as well as the positioning of ultra-small objects in nanotechnology. (paper)

  15. Silicon-Based Nanoscale Composite Energetic Materials

    Science.gov (United States)

    2013-02-01

    1193-1211. 9. Krishnamohan, G., E.M. Kurian, and H.R. Rao, Thermal Analysis and Inverse Burning Rate Studies on Silicon-Potassium Nitrate System...reported in a journal paper and appears in the Appendix. Multiscale Nanoporous Silicon Combustion Introduction for nanoporous silicon effort While

  16. Thermal analysis of silicon carbide coating on a nickel based superalloy substrate and thickness measurement of top layers by lock-in infrared thermography

    Energy Technology Data Exchange (ETDEWEB)

    Ranjit, Shrestha; Kim, Won Tae [Kongju National University, Cheonan (Korea, Republic of)

    2017-04-15

    In this paper, we investigate the capacity of the lock-in infrared thermography technique for the evaluation of non-uniform top layers of a silicon carbide coating with a nickel based superalloy sample. The method utilized a multilayer heat transfer model to analyze the surface temperature response. The modelling of the sample was done in ANSYS. The sample consists of three layers, namely, the metal substrate, bond coat and top coat. A sinusoidal heating at different excitation frequencies was imposed upon the top layer of the sample according to the experimental procedures. The thermal response of the excited surface was recorded, and the phase angle image was computed by Fourier transform using the image processing software, MATLAB and Thermofit Pro. The correlation between the coating thickness and phase angle was established for each excitation frequency. The most appropriate excitation frequency was found to be 0.05 Hz. The method demonstrated potential in the evaluation of coating thickness and it was successfully applied to measure the non-uniform top layers ranging from 0.05 mm to 1 mm with an accuracy of 0.000002 mm to 0.045 mm.

  17. Adsorption, desorption, and film formation of quinacridone and its thermal cracking product indigo on clean and carbon-covered silicon dioxide surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Scherwitzl, Boris; Lassnig, Roman; Truger, Magdalena; Resel, Roland; Leising, Günther; Winkler, Adolf, E-mail: a.winkler@tugraz.at [Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz (Austria)

    2016-09-07

    The evaporation of quinacridone from a stainless steel Knudsen cell leads to the partial decomposition of this molecule in the cell, due to its comparably high sublimation temperature. At least one additional type of molecules, namely indigo, could be detected in the effusion flux. Thermal desorption spectroscopy and atomic force microscopy have been used to study the co-deposition of these molecules on sputter-cleaned and carbon-covered silicon dioxide surfaces. Desorption of indigo appears at temperatures of about 400 K, while quinacridone desorbs at around 510 K. For quinacridone, a desorption energy of 2.1 eV and a frequency factor for desorption of 1 × 10{sup 19} s{sup −1} were calculated, which in this magnitude is typical for large organic molecules. A fraction of the adsorbed quinacridone molecules (∼5%) decomposes during heating, nearly independent of the adsorbed amount, resulting in a surface composed of small carbon islands. The sticking coefficients of indigo and quinacridone were found to be close to unity on a carbon covered SiO{sub 2} surface but significantly smaller on a sputter-cleaned substrate. The reason for the latter can be attributed to insufficient energy dissipation for unfavorably oriented impinging molecules. However, due to adsorption via a hot-precursor state, the sticking probability is increased on the surface covered with carbon islands, which act as accommodation centers.

  18. Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

    Science.gov (United States)

    Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

    2016-11-01

    The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime ( τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

  19. Diode characteristics and residual deep-level defects of p+n abrupt junctions fabricated by rapid thermal annealing of boron implanted silicon

    International Nuclear Information System (INIS)

    Usami, A.; Katayama, M.; Wada, T.; Tokuda, Y.

    1987-01-01

    p + n diodes were fabricated by rapid thermal annealing (RTA) of boron implanted silicon in the annealing temperature range 700-1100 0 C for around 7 s, and the RTA temperature dependence of electrical characteristics of these diodes was studied. Deep-level transient spectroscopy (DLTS) measurements were made to evaluate residual deep-level defects in the n-type bulk. Three electron traps were observed in p + n diodes fabricated by RTA at 700 0 C. It was considered that these three traps were residual point defects near the tail of the implantation damage after RTA. Residual defect concentrations increased in the range 700-900 0 C and decreased in the range 1000-1100 0 C. The growth of defects in the bulk was ascribed to the diffusion of defects from the implanted layer during RTA. Concentrations of electron traps observed in p + n diodes fabricated by RTA at 1100 0 C were approx. 10 12 cm -3 . It was found that these residual deep-level defects observed by DLTS were inefficient generation-recombination centres since the reverse current was independent of the RTA temperatures. (author)

  20. An investigation of hydrogenized amorphous Si structures with Doppler broadening positron annihilation techniques

    International Nuclear Information System (INIS)

    Petkov, M.P.; Marek, T.; Asoka-Kumar, P.; Lynn, K.G.; Crandall, R.S.; Mahan, A.H.

    1998-01-01

    In this letter, we examine the feasibility of applying positron annihilation spectroscopy to the study of hydrogenized amorphous silicon (a-Si:H)-based structures produced by chemical vapor deposition techniques. The positron probe, sensitive to open volume formations, is used to characterize neutral and negatively charged silicon dangling bonds, typical for undoped and n-doped a-Si:H, respectively. Using depth profiling along the growth direction a difference was observed in the electronic environment of these defects, which enables their identification in a p-i-n device. copyright 1998 American Institute of Physics

  1. Positron-molecule interactions and corresponding positron attachment to molecules. As a basis for positron emission tomography (PET)

    International Nuclear Information System (INIS)

    Tachikawa, Masanori; Kimura, Mineo; Pichl, Lukas

    2007-01-01

    Through positron and electron interactions, they annihilate emitting primarily two gamma rays with 180-degree opposite directions. Positron spectroscopy using the characteristics of these gamma rays has been employed for analyzing various properties of material as well as for positron emission tomography (PET). However, its fundamental physics of positron-electron interactions and resulting features of emitting gamma rays are not well understood. By obtaining better understanding of positron interactions, it should become possible to provide the firm bases for positron spectroscopy in finer accuracy and quality. Here, we propose a significant mechanism for positron annihilation through positron attachment process, which may help increase the quality of positron spectroscopy. (author)

  2. Electron-positron interactions

    International Nuclear Information System (INIS)

    Wiik, B.; Wolf, G.

    1979-01-01

    This book is an introduction into the physics of electron-positron interactions. After a description of electron-positron storage rings pure electromagnetic e + e - interactions, and the total cross section are considered. Then low energy processes, the production of the J/psi and psi' particles including their radiative decay as well as the search for other narrow vector states are described. Then after the quark model interpretation of J/psi and psi' charmed mesons, the heavy lepton t, and the upsilon resonances are described. Thereafter inclusive hadron production and jet formation is discussed. Finally the next generation of e + e - colliding rings is described, and the first results from PETRA are presented. This book is suited for all physicists, who want to get a general review about e + e - physics. (HSI) 891 HSI/HSI 892 RKD

  3. Tomography by positrons emission

    International Nuclear Information System (INIS)

    Mosconi, Sergio L.

    1999-01-01

    The tomography by positrons emission is a technology that allows to measure the concentration of positrons emission in a tri dimensional body through external measurements. Among the isotope emissions have carbon isotopes are ( 11 C), of the oxygen ( 15 O), of the nitrogen ( 13 N) that are three the element that constitute the base of the organic chemistry. Theses have on of the PET's most important advantages, since many biological interesting organic molecules can be tracer with these isotopes for the metabolism studies 'in vivo' through PET, without using organic tracers that modify the metabolism. The mentioned isotopes, also possess the characteristic of having short lifetime, that constitute on of PET's advantages from the dosimetric point of view. Among 11 C, 15 O, and 13 N, other isotopes that can be obtained of a generator as the 68 Ga and 82 Rb

  4. Positron emission tomography camera

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    A positron emission tomography camera having a plurality of detector rings positioned side-by-side or offset by one-half of the detector cross section around a patient area to detect radiation therefrom. Each ring contains a plurality of scintillation detectors which are positioned around an inner circumference with a septum ring extending inwardly from the inner circumference along each outer edge of each ring. An additional septum ring is positioned in the middle of each ring of detectors and parallel to the other septa rings, whereby the inward extent of all the septa rings may be reduced by one-half and the number of detectors required in each ring is reduced. The additional septa reduces the costs of the positron camera and improves its performance

  5. Positron emission tomography camera

    International Nuclear Information System (INIS)

    Anon.

    1987-01-01

    A positron emission tomography camera having a plurality of detector rings positioned side-by-side or offset by one-half of the detector cross section around a patient area to detect radiation therefrom. Each detector ring or offset ring includes a plurality of photomultiplier tubes and a plurality of scintillation crystals are positioned relative to the photomultiplier tubes whereby each tube is responsive to more than one crystal. Each alternate crystal in the ring is offset by one-half or less of the thickness of the crystal such that the staggered crystals are seen by more than one photomultiplier tube. This sharing of crystals and photomultiplier tubes allows identification of the staggered crystal and the use of smaller detectors shared by larger photomultiplier tubes thereby requiring less photomultiplier tubes, creating more scanning slices, providing better data sampling, and reducing the cost of the camera. The offset detector ring geometry reduces the costs of the positron camera and improves its performance

  6. Amorphous SiO {sub x} nanowires grown on silicon (100) substrates via rapid thermal process of nanodiamond films

    Energy Technology Data Exchange (ETDEWEB)

    Liang Xingbo [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Wang Lei [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Yang Deren [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)]. E-mail: mseyang@zju.edu.cn

    2006-05-01

    Rapid thermal process (RTP) has been carried out on the deposited nanocrystalline diamond (NCD) films. The RTP treatments performed at 800 and 1200 deg. C have been shown to exert prominent influence on the morphology and structure of the NCD films. The loss of material at grain boundaries has been observed at both 800 and 1200 deg. C RTP treatments. Large-scale amorphous SiO {sub x} nanowires with diameters of 30-50 nm and length up to 10 {mu}m were synthesized after RTP treatment at 1200 deg. C for 60 s. The synthesized nanowires were characterized in detail by scanning electron microscopy, transmission electron microscopy, selected area electron diffraction and energy-dispersed X-ray spectrometry analysis. A possible growth mechanism has been proposed to explain the observed phenomenon.

  7. New techniques of positron annihilation

    International Nuclear Information System (INIS)

    1983-02-01

    Studies on new techniques of positron annihilation and its application to various fields are presented. First, production of slow positron and its characteristic features are described. The slow positron can be obtained from radioisotopes by using a positron moderator, proton beam bombardment on a boron target, and pair production by using an electron linear accelerator. Bright enhancement of the slow positron beam is studied. Polarized positron beam can be used for the study of the momentum distribution of an electron in ferromagnetic substances. Production of polarized positrons and measurements of polarization are discussed. Various phases of interaction between slow positrons and atoms (or molecules) are described. A comparative study of electron scavenging effects on luminescence and on positronium formation in cyclohexane is presented. The positron annihilation phenomena are applicable for the surface study. The microscopic information on the surface of porous material may be obtained. The slow positrons are also useful for the surface study. Production and application of slow muon (positive and negative) are presented in this report. (Kato, T.)

  8. Generation of monoenergetic positrons

    International Nuclear Information System (INIS)

    Hulett, L.D. Jr.; Dale, J.M.; Miller, P.D. Jr.; Moak, C.D.; Pendyala, S.; Triftshaeuser, W.; Howell, R.H.; Alvarez, R.A.

    1983-01-01

    Many experiments have been performed in the generation and application of monoenergetic positron beams using annealed tungsten moderators and fast sources of 58 Co, 22 Na, 11 C, and LINAC bremstrahlung. This paper will compare the degrees of success from our various approaches. Moderators made from both single crystal and polycrystal tungsten have been tried. Efforts to grow thin films of tungsten to be used as transmission moderators and brightness enhancement devices are in progress

  9. Positron emission tomography

    International Nuclear Information System (INIS)

    Marchenkov, N.S.

    2000-01-01

    The foundations of the positron emission tomography (PET), widely used for the medical diagnostics, are considered. The brief description of the cyclotron for production of radionuclides, applied in the PET, the target devices for manufacturing the position emitters, the moduli for the radiopharmaceuticals synthesis (RPS) for the PET is presented. The necessity and concept of complete automation of the RPS for the PET are discussed [ru

  10. Non-invasive thermal profiling of silicon wafer surface during RTP using acoustic and signal processing techniques

    Science.gov (United States)

    Syed, Ahmed Rashid

    Among the great physical challenges faced by the current front-end semiconductor equipment manufacturers is the accurate and repeatable surface temperature measurement of wafers during various fabrication steps. Close monitoring of temperature is essential in that it ensures desirable device characteristics to be reliably reproduced across various wafer lots. No where is the need to control temperature more pronounced than it is during Rapid Thermal Processing (RTP) which involves temperature ramp rates in excess of 200°C/s. This dissertation presents an elegant and practical approach to solve the wafer surface temperature estimation problem, in context of RTP, by deploying hardware that acquires the necessary data while preserving the integrity and purity of the wafer. In contrast to the widely used wafer-contacting (and hence contaminating) methods, such as bonded thermocouples, or environment sensitive schemes, such as light-pipes and infrared pyrometry, the proposed research explores the concept of utilizing Lamb (acoustic) waves to detect changes in wafer surface temperature, during RTP. Acoustic waves are transmitted to the wafer via an array of quartz rods that normally props the wafer inside an RTP chamber. These waves are generated using piezoelectric transducers affixed to the bases of the quartz rods. The group velocity of Lamb waves traversing the wafer surface undergoes a monotonic decrease with rise in wafer temperature. The correspondence of delay in phase of the received Lamb waves and the ambient temperature, along all direct paths between sending and receiving transducers, yields a psuedo real-time thermal image of the wafer. Although the custom built hardware-setup implements the above "proof-of-concept" scheme by transceiving acoustic signals at a single frequency, the real-world application will seek to enhance the data acquistion. rate (>1000 temperature measurements per seconds) by sending and receiving Lamb waves at multiple frequencies (by

  11. Positron Annihilation in Insulating Materials

    International Nuclear Information System (INIS)

    Asoka-Kumar, P; Sterne, PA

    2002-01-01

    We describe positron results from a wide range of insulating materials. We have completed positron experiments on a range of zeolite-y samples, KDP crystals, alkali halides and laser damaged SiO 2 . Present theoretical understanding of positron behavior in insulators is incomplete and our combined theoretical and experimental approach is aimed at developing a predictive understanding of positrons and positronium annihilation characteristics in insulators. Results from alkali halides and alkaline-earth halides show that positrons annihilate with only the halide ions, with no apparent contribution from the alkali or alkaline-earth cations. This contradicts the results of our existing theory for metals, which predicts roughly equal annihilation contributions from cation and anion. We also present result obtained using Munich positron microprobe on laser damaged SiO 2 samples

  12. Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass

    Energy Technology Data Exchange (ETDEWEB)

    Rau, B. [Helmholtz Centre Berlin for Materials and Energy, Kekulestr. 5, D-12489 Berlin (Germany)], E-mail: bjoern.rau@helmholtz-berlin.de; Weber, T.; Gorka, B.; Dogan, P.; Fenske, F.; Lee, K.Y.; Gall, S.; Rech, B. [Helmholtz Centre Berlin for Materials and Energy, Kekulestr. 5, D-12489 Berlin (Germany)

    2009-03-15

    In this report, we discuss the influence of rapid thermal annealing (RTA) on the performance of polycrystalline Si (poly-Si) thin-film solar cells on glass where the poly-Si layers are differently prepared. The first part presents a comprehensive study of RTA treatments on poly-Si thin-films made by solid phase crystallization (SPC) (standard material of CSG Solar AG, Thalheim). By varying both plateau temperature (up to 1050 deg. C) and duration (up to 1000 s) of the annealing profile, we determined the parameters for a maximum open-circuit voltage (V{sub OC}). In addition, we applied our standard plasma hydrogenation treatment in order to passivate the remaining intra-grain defects and grain boundaries by atomic hydrogen resulting in a further increase of V{sub OC}. We found, that the preceding RTA treatment increases the effect of hydrogenation already at comparable low RTA temperatures. The effect on hydrogenation increases significantly with RTA temperature. In a second step we investigated the effect of the RTA and hydrogenation on large-grained poly-Si films based on the epitaxial thickening of poly-Si seed layers.

  13. Deposition reactors for solar grade silicon: A comparative thermal analysis of a Siemens reactor and a fluidized bed reactor

    Science.gov (United States)

    Ramos, A.; Filtvedt, W. O.; Lindholm, D.; Ramachandran, P. A.; Rodríguez, A.; del Cañizo, C.

    2015-12-01

    Polysilicon production costs contribute approximately to 25-33% of the overall cost of the solar panels and a similar fraction of the total energy invested in their fabrication. Understanding the energy losses and the behaviour of process temperature is an essential requirement as one moves forward to design and build large scale polysilicon manufacturing plants. In this paper we present thermal models for two processes for poly production, viz., the Siemens process using trichlorosilane (TCS) as precursor and the fluid bed process using silane (monosilane, MS). We validate the models with some experimental measurements on prototype laboratory reactors relating the temperature profiles to product quality. A model sensitivity analysis is also performed, and the effects of some key parameters such as reactor wall emissivity and gas distributor temperature, on temperature distribution and product quality are examined. The information presented in this paper is useful for further understanding of the strengths and weaknesses of both deposition technologies, and will help in optimal temperature profiling of these systems aiming at lowering production costs without compromising the solar cell quality.

  14. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  15. Nonlinear positron acoustic solitary waves

    International Nuclear Information System (INIS)

    Tribeche, Mouloud; Aoutou, Kamel; Younsi, Smain; Amour, Rabia

    2009-01-01

    The problem of nonlinear positron acoustic solitary waves involving the dynamics of mobile cold positrons is addressed. A theoretical work is presented to show their existence and possible realization in a simple four-component plasma model. The results should be useful for the understanding of the localized structures that may occur in space and laboratory plasmas as new sources of cold positrons are now well developed.

  16. Positron emission tomography. Basic principles

    International Nuclear Information System (INIS)

    Rodriguez, Jose Luis; Massardo, Teresa; Gonzalez, Patricio

    2001-01-01

    The basic principles of positron emission tomography (PET) technique are reviewed. lt allows to obtain functional images from gamma rays produced by annihilation of a positron, a positive beta particle. This paper analyzes positron emitters production in a cyclotron, its general mechanisms, and the various detection systems. The most important clinical applications are also mentioned, related to oncological uses of fluor-l8-deoxyglucose

  17. Mining the bulk positron lifetime

    International Nuclear Information System (INIS)

    Aourag, H.; Guittom, A.

    2009-01-01

    We introduce a new approach to investigate the bulk positron lifetimes of new systems based on data-mining techniques. Through data mining of bulk positron lifetimes, we demonstrate the ability to predict the positron lifetimes of new semiconductors on the basis of available semiconductor data already studied. Informatics techniques have been applied to bulk positron lifetimes for different tetrahedrally bounded semiconductors in order to discover computational design rules. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Positron implantation profile in kapton

    International Nuclear Information System (INIS)

    Plotkowski, K.; Panek, T.J.; Kansj, J.

    1988-01-01

    Measurements of positrons' implantation profile were made with geometry as in the majority of PAT experiments, making use of the difference in values of mean lifetimes of positrons in the absorber and in the detector. The function describing the absorption of positrons in the absorber taking into account measurement geometry was fitted to the experimental data. The correction to the exponential relation occurring in this function is the dominating factor for small thicknesses of the absorber. In this analysis various values of positrons' backscatter coefficients of the nickel and of the kapton were also taken into account

  19. Positron lifetimes in deformed copper

    International Nuclear Information System (INIS)

    Hinode, Kenji; Tanigawa, Shoichiro; Doyama, Masao

    1976-01-01

    Positron lifetime measurements were performed for Cu samples with different densities of lattice defects. The lifetime spectra were successfully resolved into two components with the help of the well established analysis program. Obtained results were quite consistent with those expected from the trapping model. The positron trapping mechanism from free to trapped states and the initial condition of the model were especially checked. Deduced values obtained for tau sub(c) (lifetime of free positrons) and tau sub(t) (lifetime of trapped positrons) were 122+-5 psec and 176+-5 psec, respectively. (auth.)

  20. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  1. Vertically aligned CNT growth on a microfabricated silicon heater with integrated temperature control—determination of the activation energy from a continuous thermal gradient

    DEFF Research Database (Denmark)

    Engstrøm, Daniel Southcott; Rupesinghe, Nalin L; Teo, Kenneth B K

    2011-01-01

    Silicon microheaters for local growth of a vertically aligned carbon nanotube (VACNT) were fabricated. The microheaters had a four-point-probe structure that measured the silicon conductivity variations in the heated region which is a measure of the temperature. Through FEM simulations the temper...

  2. Positron annihilation and Wheeler complexes in semiconductors

    International Nuclear Information System (INIS)

    Prokob'ev, E.P.

    1995-01-01

    The Wheeler complexes Ps-Ex (positronium-exciton) were studied. These complexes are formed during irradiation of semiconductors and ionic crystals with positrons at low temperatures under optical excitation by excitons. The binding energy of these and more complex entities preventing dissociation into Ps and Ex and/or Ex ± is at least 0.1 eV, and the lifetime for the two-photon self-annihilation is τ 2γ ∼ 5.02 x 10 -10 x c 3 s (x c is the phenomenological parameter of the effective-mass method). The estimation of lifetimes τ 2γ and τ 2γ t (the total lifetime of Ps-Ex complexes with account for positron annihilation on valence electrons) led to the conclusion that Ps-Ex complexes can be observed in a number of oxide semiconductors, in zinc sulfide, and in alkali halide crystals; however, it was difficult to observe such complexes in silicon, gallium arsenide, and other A 3 B 5 and A 2 B 6 semiconductors

  3. Positron Emission Tomography (PET)

    International Nuclear Information System (INIS)

    Welch, M.J.

    1990-01-01

    Positron emission tomography (PET) assesses biochemical processes in the living subject, producing images of function rather than form. Using PET, physicians are able to obtain not the anatomical information provided by other medical imaging techniques, but pictures of physiological activity. In metaphoric terms, traditional imaging methods supply a map of the body's roadways, its, anatomy; PET shows the traffic along those paths, its biochemistry. This document discusses the principles of PET, the radiopharmaceuticals in PET, PET research, clinical applications of PET, the cost of PET, training of individuals for PET, the role of the United States Department of Energy in PET, and the futures of PET. 22 figs

  4. Positron Emission Tomography (PET)

    Energy Technology Data Exchange (ETDEWEB)

    Welch, M.J.

    1990-01-01

    Positron emission tomography (PET) assesses biochemical processes in the living subject, producing images of function rather than form. Using PET, physicians are able to obtain not the anatomical information provided by other medical imaging techniques, but pictures of physiological activity. In metaphoric terms, traditional imaging methods supply a map of the body's roadways, its, anatomy; PET shows the traffic along those paths, its biochemistry. This document discusses the principles of PET, the radiopharmaceuticals in PET, PET research, clinical applications of PET, the cost of PET, training of individuals for PET, the role of the United States Department of Energy in PET, and the futures of PET. 22 figs.

  5. Positron Emission Tomography (PET)

    Science.gov (United States)

    Welch, M. J.

    1990-01-01

    Positron emission tomography (PET) assesses biochemical processes in the living subject, producing images of function rather than form. Using PET, physicians are able to obtain not the anatomical information provided by other medical imaging techniques, but pictures of physiological activity. In metaphoric terms, traditional imaging methods supply a map of the body's roadways, its, anatomy; PET shows the traffic along those paths, its biochemistry. This document discusses the principles of PET, the radiopharmaceuticals in PET, PET research, clinical applications of PET, the cost of PET, training of individuals for PET, the role of the United States Department of Energy in PET, and the futures of PET.

  6. Angular correlation in positron annihilation

    International Nuclear Information System (INIS)

    Arponen, J.; Pajanne, E.

    1978-01-01

    The angular correlation of the two gamma quanta emitted when a thermalized positron annihilates with metallic conduction electrons is investigated by applying the newly developed theory of electron gas as a system of interacting collective excitations. The method leads in a natural way to the appearance of high-momentum components (i.e. pair momentum p>psub(F) in the annihilation radiation already in the case of annihilation with conduction electrons only. The amount of these components is significant approximately (10 %) in a dilute electron gas (like alkali metals), but fairly irrelevant for higher densities. The momentum-dependence of the enhancement factor for a dense system (with rsub(s) approximately equal to 2) agrees well both with the earlier theories due to Kahana and others, and also with recent accurate experimental observations. As rsub(s) increases into the alkali-metal region, the enhancement factor for p< psub(F) becomes relatively more and more constant, in contrast with the trend in the Kahana theory. In this density regime the experimental results seem to vary widely, although most of them desagree with the present prediction. We discuss the possible discrepancy and try to account for the effects of the core annihilation by a simple model. (author)

  7. Cyclotrons and positron emitting radiopharmaceuticals

    Energy Technology Data Exchange (ETDEWEB)

    Wolf, A.P.; Fowler, J.S.

    1984-01-01

    The state of the art of Positron Emission Tomography (PET) technology as related to cyclotron use and radiopharmaceutical production is reviewed. The paper discusses available small cyclotrons, the positron emitters which can be produced and the yields possible, target design, and radiopharmaceutical development and application. 97 refs., 12 tabs. (ACR)

  8. Cyclotrons and positron emitting radiopharmaceuticals

    International Nuclear Information System (INIS)

    Wolf, A.P.; Fowler, J.S.

    1984-01-01

    The state of the art of Positron Emission Tomography (PET) technology as related to cyclotron use and radiopharmaceutical production is reviewed. The paper discusses available small cyclotrons, the positron emitters which can be produced and the yields possible, target design, and radiopharmaceutical development and application. 97 refs., 12 tabs

  9. Silicon hybrid integration

    International Nuclear Information System (INIS)

    Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

    2011-01-01

    Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

  10. A Southern African positron beam

    International Nuclear Information System (INIS)

    Britton, D.T.; Haerting, M.; Teemane, M.R.B.; Mills, S.; Nortier, F.M.; Van der Walt, T.N.

    1997-01-01

    The first stage of a state of the art positron beam, being constructed at the University of Cape Town, is currently being brought into operation. This is the first positron beam on the African continent, as well as being the first positron beam dedicated to solid and surface studies in the southern hemisphere. The project also contains a high proportion of local development, including the encapsulated 22 Na positron source developed by our collaboration. Novel features in the design include a purely magnetic in-line deflector, working in the solenoidal guiding field, to eliminate unmoderated positrons and block the direct line of sight to the source. A combined magnetic projector and single pole probe forming lens is being implemented in the second phase of construction to achieve a spot size of 10 μm without remoderation

  11. A high intensity positron beam at the Brookhaven reactor

    International Nuclear Information System (INIS)

    Weber, M.; Lynn, K.G.; Roellig, L.O.; Mills, A.P. Jr.; Moodenbaugh, A.R.

    1987-01-01

    We describe a high intensity, low energy positron beam utilizing high specific activity /sup 64/Cu sources (870 Ci/g) produced in a reactor with high thermal neutron flux. Fast-to-slow moderation can be performed in a self moderation mode or with a transmission moderator. Slow positron rates up to 1.6 x 10/sup 8/ e/sup +//s with a half life of 12.8 h are calculated. Up to 1.0 x 10/sup 8/ e/sup +//s have been observed. New developments including a Ne moderator and an on-line isotope separation process are discussed. 21 refs., 9 figs

  12. Microencapsulation of silicon cavities using a pulsed excimer laser

    KAUST Repository

    Sedky, Sherif M.; Tawfik, Hani H.; Ashour, Mohamed; Graham, Andrew B.; Provine, John W.; Wang, Qingxiao; Zhang, Xixiang; Howe, Roger T.

    2012-01-01

    This work presents a novel low thermal-budget technique for sealing micromachined cavities in silicon. Cavities are sealed without deposition, similar to the silicon surface-migration sealing process. In contrast to the 1100°C furnace anneal

  13. SiO 2/SiC interface proved by positron annihilation

    Science.gov (United States)

    Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Itoh, H.

    2003-06-01

    We have studied positron annihilation in a Silicon carbide (SiC)-metal/oxide/semiconductor (MOS) structure using a monoenergetic positron beam. The Doppler broadening of annihilation quanta were measured as functions of the incident positron energy and the gate bias. Applying negative gate bias, significant increases in S-parameters were observed. This indicates the migration of implanted positrons towards SiO 2/SiC interface and annihilation at open-volume type defects. The behavior of S-parameters depending on the bias voltage was well correlated with the capacitance-voltage ( C- V) characteristics. We observed higher S-parameters and the interfacial trap density in MOS structures fabricated using the dry oxidation method as compared to those by pyrogenic oxidation method.

  14. SiO2/SiC interface proved by positron annihilation

    International Nuclear Information System (INIS)

    Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Itoh, H.

    2003-01-01

    We have studied positron annihilation in a Silicon carbide (SiC)-metal/oxide/semiconductor (MOS) structure using a monoenergetic positron beam. The Doppler broadening of annihilation quanta were measured as functions of the incident positron energy and the gate bias. Applying negative gate bias, significant increases in S-parameters were observed. This indicates the migration of implanted positrons towards SiO 2 /SiC interface and annihilation at open-volume type defects. The behavior of S-parameters depending on the bias voltage was well correlated with the capacitance-voltage (C-V) characteristics. We observed higher S-parameters and the interfacial trap density in MOS structures fabricated using the dry oxidation method as compared to those by pyrogenic oxidation method

  15. Study of a positron source generated by photons from ultrarelativistic channeled particles

    International Nuclear Information System (INIS)

    Chehab, R.; Couchot, F.; Nyaiesh, A.R.; Richard, F.; Artru, X.

    1989-03-01

    Radiation by channeled electrons in Germanium and Silicon crystals along the axis is studied as a very promising photon source of small angular divergence for positron generation in amorphous targets. Radiation rates for different crystal lengths - from some tenths of mm to 10 mm - and two electron incident energies, 5 and 20 GeV, are considered and a comparison between the two crystals is presented. Thermic behaviour of the crystal under incidence of bunches of 10 10 electrons is also examined. The corresponding positron yields for tungsten amorphous converters - of 0.5 and 1 X o thickness - are calculated considering the case of a Germanium photon generator. Assuming a large acceptance optical matching system as the adiabatic device of the SLC, accepted positrons are evaluated and positron yields larger than 1 e + /e - are obtained

  16. Positrons in amorphous alloys

    International Nuclear Information System (INIS)

    Moser, Pierre.

    1981-07-01

    Positron annihilation techniques give interesting informations about ''empty spaces'' in amorphous alloys. The results of an extensive research work on the properties of either pre-existing or irradiation induced ''empty spaces'' in four amorphous alloys are presented. The pre-existing empty spaces appear to be small vacancy-like defects. The irradiation induced defects are ''close pairs'' with widely distributed configurations. There is a strong interaction between vacancy like and interstitial like components. A model is proposed, which explains the radiation resistance mechanism of the amorphous alloys. An extensive joint research work to study four amorphous alloys, Fe 80 B 20 ,Fe 40 Ni 40 P 14 B 6 , Cu 50 Ti 50 , Pd 80 Si 20 , is summarized

  17. Positron emission tomography camera

    International Nuclear Information System (INIS)

    Anon.

    1987-01-01

    A positron emission tomography camera having a plurality of detector planes positioned side-by-side around a patient area to detect radiation. Each plane includes a plurality of photomultiplier tubes and at least two rows of scintillation crystals on each photomultiplier tube extend across to adjacent photomultiplier tubes for detecting radiation from the patient area. Each row of crystals on each photomultiplier tube is offset from the other rows of crystals, and the area of each crystal on each tube in each row is different than the area of the crystals on the tube in other rows for detecting which crystal is actuated and allowing the detector to detect more inter-plane slides. The crystals are offset by an amount equal to the length of the crystal divided by the number of rows. The rows of crystals on opposite sides of the patient may be rotated 90 degrees relative to each other

  18. Defect identification using positrons

    International Nuclear Information System (INIS)

    Beling, C.D.; Fung, S.

    2001-01-01

    The current use of the lifetime and Doppler broadening techniques in defect identification is demonstrated with two studies, the first being the identification of carbon vacancy in n-6H SiC through lifetime spectroscopy, and the second the production of de-hydrogenated voids in α-Si:H through light soaking. Some less conventional ideas are presented for more specific defect identification, namely (i) the amalgamation of lifetime and Doppler techniques with conventional deep level transient spectroscopy in what may be called ''positron-deep level transient spectroscopy'', and (ii) the extraction of more spatial information on vacancy defects by means of what may be called ''Fourier transform Doppler broadening of annihilation radiation spectroscopy'' (orig.)

  19. Positron emitting pharmaceuticals

    International Nuclear Information System (INIS)

    Rajan, M.G.R.

    2012-01-01

    Positron Emission Tomography (PET) imaging of physiology at the molecular level bridges the gap between laboratory science and clinical medicine by providing the most specific and sensitive means for imaging molecular pathways and interactions in tissues of man. PET-imaging requires the use Positron Emitting Radiopharmaceuticals (PRPs), which are radioactively labeled 'true metabolites' i.e., sugars, amino acids, fatty acids etc., essentially made of H, C, N and O which the cells in the body can metabolize. The PET-isotopes: 11 C, 15 O, 13 N and 18 F (instead of H) are cyclotron produced and are short-lived, which places several constraints on the synthesis time for the PRPs, quality control and their clinical use as compared to the conventional 99m Tc- and other SPECT-RPs widely used in nuclear medicine. There are large number of published reports showing the utility of several PRPs labeled with 18 F (T 1/2 = 110 min) and 11 C (T 1/2 = 20 min). A few PRPs have been labeled with 13 N (T 1/2 = 10 min). 15 O (T 1/2 = 2min) is used mostly as H 2 15 O, C 15 or C 15 O 2 . 18 F-radiopharmaceuticals can be made at a medical cyclotron facility and sent to PET -imaging centres, which can be reached in a couple of hours. The sensitivity of PET -imaging has encouraged R and D in several other PRPs, labeled with viz., 68 Ga (generator produced, T 1/2 68 min), 124 I (cyclotron, T 1/2 4.2 d), 82 Rb (generator, T 1/2 75s), 64 Cu (cyclotron, T 1/2 12h), and 94m Tc (cyclotron, T 1/2 52 min). Due to its relevance in several diseases, particularly cancer, PET-imaging has made major scientific contribution to drug development, particularly for neurological diseases and cancer treatment. (author)

  20. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.