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Sample records for silicon positron thermalization

  1. Porous silicon investigated by positron annihilation

    International Nuclear Information System (INIS)

    Cruz, R.M. de la; Pareja, R.

    1989-01-01

    The effect of the anodic conversion in silicon single crystals is investigated by positron lifetime measurements. Anodization at constant current induces changes in the positron lifetime spectrum of monocrystalline silicon samples. It is found that theses changes are primarily dependent on the silicon resistivity. The annihilation parameter behaviour of anodized samples, treated at high temperature under reducing conditions, is also investigated. The results reveal that positron annihilation can be a useful technique to characterize porous silicon formed by anodizing as well as to investigate its thermal behaviour. (author)

  2. A study of positron irradiated porous silicon

    International Nuclear Information System (INIS)

    Huang Yuanming; Xue Qing; Zhai Baogai; Xu Aijun; Liu Shewen; Yu Weizhong

    1998-01-01

    The effect of positron irradiation on photoluminescence (PL) of porous silicon has been studied. After four hour positron irradiation, the red PL spectrum of porous silicon blue shifts into greenish spectral region, and a higher energy luminescence band is introduced into this blueshifted spectrum. The fourier transform infrared absorption experiment shows that the positron irradiation can cause further oxidization of porous silicon. A possible mechanism causing this change of PL spectra after positron irradiation is suggested

  3. Positron annihilation lifetime in float-zone n-type silicon irradiated by fast electrons: a thermally stable vacancy defect

    International Nuclear Information System (INIS)

    Arutyunov, Nikolay; Emtsev, Vadim; Oganesyan, Gagik; Krause-Rehberg, Reinhard; Elsayed, Mohamed; Kozlovskii, Vitalii

    2016-01-01

    Temperature dependency of the average positron lifetime has been investigated for n-type float-zone silicon, n-FZ-Si(P), subjected to irradiation with 0.9 MeV electrons at RT. In the course of the isochronal annealing a new defect-related temperature-dependent pattern of the positron lifetime spectra has been revealed. Beyond the well known intervals of isochronal annealing of acceptor-like defects such as E-centers, divacancies and A-centers, the positron annihilation at the vacancy defects has been observed in the course of the isochronal annealing from ∝ 320 C up to the limit of reliable detecting of the defect-related positron annihilation lifetime at ≥ 500 C. These data correlate with the ones of recovery of the concentration of the charge carriers and their mobility which is found to continue in the course of annealing to ∝ 570 C; the annealing is accomplished at ∝650 C. A thermally stable complex consisting of the open vacancy volume and the phosphorus impurity atom, V_o_p-P, is suggested as a possible candidate for interpreting the data obtained by the positron annihilation lifetime spectroscopy. An extended couple of semi-vacancies, 2V_s_-_e_x_t, as well as a relaxed inwards a couple of vacancies, 2V_i_n_w, are suggested as the open vacancy volume V_o_p to be probed with the positron. It is argued that a high thermal stability of the V_s_-_e_x_t PV_s_-_e_x_t (or V_i_n_wPV_i_n_w_.) configuration is contributed by the efficiency of PSi_5 bonding. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Depth profiling of boron implanted silicon by positron beam

    International Nuclear Information System (INIS)

    Oevuenc, S.

    2004-01-01

    Positron depth profiling analyses of low energy implants of silicon aim to observe tbe structure and density of the vacancies generating by implantation and the effect of annealing. This work present the results to several set of data starting S and W parameters. Boron implanted Silicon samples with different implantation energies,20,22,24,and 26 keV are analyzed by Slow positron beam (0-40 keV and 10 5 e + /s )(Variable Energy Positron) at the Positron Centre Delf-HOLLAND

  5. Positron annihilation spectroscopy study of porous silicon

    International Nuclear Information System (INIS)

    Britkov, O.M.; Gavrilov, S.A.; Kalugin, V.V.; Timoshenkov, S.P.; Grafutin, V.I.; Ilyukhina, O.V.; Myasishcheva, G.G.; Prokop'ev, E.P.; Funtikov, Yu.V.

    2007-01-01

    Experimental studies of porous silicon by means of a standard positron annihilation technique based on measuring the angular distribution of annihilation photons, are reported. It was shown that the spectra of angular correlation of annihilation radiation in porous silicon are approximated well by a parabola (I p ) and two Gaussians (I g1 , I g2 ). The narrow Gaussian component I g1 is most likely due to the annihilation of localized para-positronium in pores. The full width at half maximum is on the order of 0.8 mrad, a value that corresponds to the kinetic energy of an annihilating positron-electron pair (0.079 ± 0.012 eV), and its intensity is about 1.5%. The total positronium yield in porous silicon reaches 6% in this case. The particle radius determined in the study is about 10-20 A [ru

  6. Probing the formation of silicon nano-crystals (Si-ncs) using variable energy positron annihilation spectroscopy

    Science.gov (United States)

    Knights, A. P.; Bradley, J. D. B.; Hulko, O.; Stevanovic, D. V.; Edwards, C. J.; Kallis, A.; Coleman, P. G.; Crowe, I. F.; Halsall, M. P.; Gwilliam, R. M.

    2011-01-01

    We describe preliminary results from studies of the formation of silicon nano-crystals (Si-ncs) embedded in stoichiometric, thermally grown SiO2 using Variable Energy Positron Annihilation Spectroscopy (VEPAS). We show that the VEPAS technique is able to monitor the introduction of structural damage. In SiO2 through the high dose Si+ ion implantation required to introduce excess silicon as a precursor to Si-nc formation. VEPAS is also able to characterize the rate of the removal of this damage with high temperature annealing, showing strong correlation with photoluminescence. Finally, VEPAS is shown to be able to selectively probe the interface between Si-ncs and the host oxide. Introduction of hydrogen at these interfaces suppresses the trapping of positrons at the interfaces.

  7. Defects in Czochralski-grown silicon crystals investigated by positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Ikari, Atsushi; Kawakami, Kazuto; Haga, Hiroyo [Nippon Steel Corp., Sagamihara, Kanagawa (Japan). Electronics Research Labs.; Uedono, Akira; Wei, Long; Kawano, Takao; Tanigawa, Shoichiro

    1994-10-01

    Positron lifetime and Doppler broadening experiments were performed on Czochralski-grown silicon crystals. A monoenergetic positron beam was also used to measure the diffusion length of positrons in the wafer. From the measurements, it was observed that the value of diffusion length of positrons decreased at the region where microdefects were formed during the crystal growth process. It was also found that the line shape parameter S decreased and the lifetime of positrons increased at the region. These results can be attributed to the annihilation of positrons trapped by vacancy oxygen complexes which are formed in association with the microdefects. (author).

  8. Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

    International Nuclear Information System (INIS)

    Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

    2006-01-01

    Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

  9. Optical and microstructural characterization of porous silicon using photoluminescence, SEM and positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Cheung, C K; Nahid, F; Cheng, C C; Beling, C D; Fung, S; Ling, C C; Djurisic, A B; Pramanik, C; Saha, H; Sarkar, C K

    2007-01-01

    We have studied the dependence of porous silicon morphology and porosity on fabrication conditions. N-type (100) silicon wafers with resistivity of 2-5 Ω cm were electrochemically etched at various current densities and anodization times. Surface morphology and the thickness of the samples were examined by scanning electron microscopy (SEM). Detailed information of the porous silicon layer morphology with variation of preparation conditions was obtained by positron annihilation spectroscopy (PAS): the depth-defect profile and open pore interconnectivity on the sample surface has been studied using a slow positron beam. Coincidence Doppler broadening spectroscopy (CDBS) was used to study the chemical environment of the samples. The presence of silicon micropores with diameter varying from 1.37 to 1.51 nm was determined by positron lifetime spectroscopy (PALS). Visible luminescence from the samples was observed, which is considered to be a combination effect of quantum confinement and the effect of Si = O double bond formation near the SiO 2 /Si interface according to the results from photoluminescence (PL) and positron annihilation spectroscopy measurements. The work shows that the study of the positronium formed when a positron is implanted into the porous surface provides valuable information on the pore distribution and open pore interconnectivity, which suggests that positron annihilation spectroscopy is a useful tool in the porous silicon micropores' characterization

  10. Density gradient in SiO 2 films on silicon as revealed by positron annihilation spectroscopy

    Science.gov (United States)

    Revesz, A. G.; Anwand, W.; Brauer, G.; Hughes, H. L.; Skorupa, W.

    2002-06-01

    Positron annihilation spectroscopy of thermally grown and deposited SiO 2 films on silicon shows in a non-destructive manner that these films have a gradient in their density. The gradient is most pronounced for the oxide grown in dry oxygen. Oxidation in water-containing ambient results in an oxide with reduced gradient, similarly to the gradient in the deposited oxide. These observations are in accordance with earlier optical and other studies using stepwise etching or a set of samples of varying thickness. The effective oxygen charge, which is very likely one of the reasons for the difference in the W parameters of silica glass and quartz crystal, could be even higher at some localized configurations in the SiO 2 films resulting in increased positron trapping.

  11. Annihilation of unthermalized positrons in a silicon single crystal at 770K

    International Nuclear Information System (INIS)

    Zaitsev, Yu.E.; Mungir, L.; Ue'pe, L.R.

    1984-01-01

    A model is considered for the annihilation of nonrelativistic positrons from quantized states in lattice channels. Annihilation gamma rays of energy over 511 keV have been observed when the positrons from an Na 22 source strike a silicon single crystal at 77 0 K. The experimental results agree well with the proposed model

  12. Amorphous silicon detectors in positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Conti, M. (Istituto Nazionale di Fisica Nucleare, Pisa (Italy) Lawrence Berkeley Lab., CA (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  13. Amorphous silicon detectors in positron emission tomography

    International Nuclear Information System (INIS)

    Conti, M.; Perez-Mendez, V.

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters ε 2 τ's are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs

  14. Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation

    International Nuclear Information System (INIS)

    Ghislotti, G.; Nielsen, B.; Asoka-Kumar, P.; Lynn, K.G.; Di Mauro, L.F.; Corni, F.; Tonini, R.

    1997-01-01

    Positron annihilation spectroscopy (PAS) is used to study Si-rich SiO 2 samples prepared by implantation of Si (160 keV) ions at doses in the range 3x10 16 endash 3x10 17 cm -2 and subsequent thermal annealing at high temperature (up to 1100 degree C). Samples implanted at doses higher than 5x10 16 cm -2 and annealed above 1000 degree C showed a PAS spectrum with an annihilation peak broader than the unimplanted sample. We discuss how these results are related to the process of silicon precipitation inside SiO 2 . copyright 1997 American Institute of Physics

  15. Hydrogen-induced structural changes in polycrystalline silicon as revealed by positron lifetime spectroscopy

    International Nuclear Information System (INIS)

    Arole, V.M.; Takwale, M.G.; Bhide, V.G.

    1989-01-01

    Hydrogen passivation of polycrystalline silicon wafer is carried out in order to reduce the deleterious effects of grain boundaries. A systematic variation is made in the process parameters implemented during hydrogen passivation and the results of room temperature resistivity measurements are reported. As an efficient tool to study the structure change, positron lifetime spectroscopic measurements are performed on original and hydrogenated polycrystalline silicon wafers and a systematic correlation is sought between the changes that take place in the electrical and structural properties of polycrystalline silicon wafer, brought about by hydrogen passivation. (author)

  16. Applications of positron depth profiling

    Energy Technology Data Exchange (ETDEWEB)

    Hakvoort, R A

    1993-12-23

    In this thesis some contributions of the positron-depth profiling technique to materials science have been described. Following studies are carried out: Positron-annihilation measurements on neon-implanted steel; Void creation in silicon by helium implantation; Density of vacancy-type defects present in amorphous silicon prepared by ion implantation; Measurements of other types of amorphous silicon; Epitaxial cobalt disilicide prepared by cobalt outdiffusion. Positron-annihilation experiments on low-pressure CVD silicon-nitride films. (orig./MM).

  17. Applications of positron depth profiling

    International Nuclear Information System (INIS)

    Hakvoort, R.A.

    1993-01-01

    In this thesis some contributions of the positron-depth profiling technique to materials science have been described. Following studies are carried out: Positron-annihilation measurements on neon-implanted steel; Void creation in silicon by helium implantation; Density of vacancy-type defects present in amorphous silicon prepared by ion implantation; Measurements of other types of amorphous silicon; Epitaxial cobalt disilicide prepared by cobalt outdiffusion. Positron-annihilation experiments on low-pressure CVD silicon-nitride films. (orig./MM)

  18. Reduced thermal conductivity of isotopically modulated silicon multilayer structures

    DEFF Research Database (Denmark)

    Bracht, H.; Wehmeier, N.; Eon, S.

    2012-01-01

    We report measurements of the thermal conductivity of isotopically modulated silicon that consists of alternating layers of highly enriched silicon-28 and silicon-29. A reduced thermal conductivity of the isotopically modulated silicon compared to natural silicon was measured by means of time......-resolved x-ray scattering. Comparison of the experimental results to numerical solutions of the corresponding heat diffusion equations reveals a factor of three lower thermal conductivity of the isotope structure compared to natural Si. Our results demonstrate that the thermal conductivity of silicon can...

  19. Positron annihilation in germanium in thermal equilibrium at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Moriya, Tsuyoshi; Komuro, Naoyuki; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kawano, Takao; Ikari, Atsushi

    1996-09-01

    Annihilation characteristics of positrons in Ge in thermal equilibrium at high temperature were studied using a monoenergetic positron beam. Precise measurements of Doppler broadening profiles of annihilation radiation were performed in the temperature range between 300 K and 1211 K. The line shape parameters of Doppler broadening profiles were found to be almost constant at 300-600 K. The changes in these parameters were observed to start above 600 K. This was attributed to both the decrease in the fraction of positrons annihilating with core electrons and the lowering of the crystal symmetry around the region detected by positron-electron pairs. This suggests that behaviors of positrons are dominated by some form of positron-lattice coupling in Ge at high temperatures. The temperature dependence of the diffusion length of positrons was also discussed. (author)

  20. Positron effective mass in silicon

    International Nuclear Information System (INIS)

    Panda, B.K.; Shan, Y.Y.; Fung, S.; Beling, C.D.

    1995-01-01

    The positron effective mass in Si is obtained from the first-principles calculations along various crystallographic directions. The effect of electron-positron correlation on the band mass is examined in this work. A positron pseudopotential scheme is worked out to calculate the isotropic band mass without explicitly solving the band energy. The effective mass 1.46m obtained as a sum of band mass and the positron-plasmon interaction compares very well with 1.5m obtained from the positron mobility data

  1. Positron annihilation studies of high dose Sb implanted silicon

    International Nuclear Information System (INIS)

    Schut, H.; Eijt, S.W.H.; Beling, C.D.; Ho, K.; Takamura, Y.

    2005-01-01

    The formation and evolution of vacancies and precipitates created by implantation of 60 keV, 2 x 10 16 cm -2 Sb + in pre-amorphized (0 0 1) Cz-Si is studied using the Doppler broadening (DB) and two-dimensional angular correlation of annihilation radiation (2D-ACAR) positron beam techniques. After implantation, samples were laser annealed (LTA) and subsequently thermal annealed at temperatures ranging from 400 to 1000 deg. C. Implantation-induced vacancy-type defects were detected up to a depth of 280 nm. After LTA, positron annihilation related to both Sb and remaining defects is observed in the first 100 nm below the surface. The deeper region only shows positron trapping at vacancy-type defects with strong reduced concentration. Complete removal is obtained after 600 deg. C anneal. At this temperature, the positron data for the upper region reveals trapping at Sb and Si sites only. With increasing annealing time (at 600 deg. C) or increasing temperature (up to 1000 deg. C) positron annihilation at Sb-sites associated with neighboring vacancies becomes apparent. Results are correlated with the observed Sb electrical deactivation above 600 deg. C, the shift from small Sb aggregates to precipitates and out-diffusion of Sb from the implantation region at higher temperatures

  2. Thermal equilibrium defects in anthracene probed by positron annihilation

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro; Tachibana, Masaru; Shimizu, Mikio; Satoh, Masaaki; Kojima, Kenichi; Ishibashi, Shoji; Kawano, Takao.

    1996-01-01

    Defects in anthracene were investigated by the positron annihilation technique. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured in the temperature range between 305 K and 516 K. The lifetime of positrons annihilated from the delocalized state was determined to be 0.306 ns around room temperature. Below the melting point, the observed temperature dependence of the line shape parameter S was explained assuming the formation energy of thermal equilibrium defects was 1 eV. Above the melting point, the pick-off annihilation of ortho-positronium in open spaces was observed, where the size of these spaces was estimated to be 0.2 nm 3 . The annihilation of positrons from the self-trapped state was also discussed. (author)

  3. Thermal equilibrium defects in anthracene probed by positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Tachibana, Masaru; Shimizu, Mikio; Satoh, Masaaki; Kojima, Kenichi; Ishibashi, Shoji; Kawano, Takao

    1996-06-01

    Defects in anthracene were investigated by the positron annihilation technique. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured in the temperature range between 305 K and 516 K. The lifetime of positrons annihilated from the delocalized state was determined to be 0.306 ns around room temperature. Below the melting point, the observed temperature dependence of the line shape parameter S was explained assuming the formation energy of thermal equilibrium defects was 1 eV. Above the melting point, the pick-off annihilation of ortho-positronium in open spaces was observed, where the size of these spaces was estimated to be 0.2 nm{sup 3}. The annihilation of positrons from the self-trapped state was also discussed. (author)

  4. Low-temperature positron-lifetime studies of proton-irradiated silicon

    DEFF Research Database (Denmark)

    Mäkinen, S.; Rajainmäki, H.; Linderoth, Søren

    1990-01-01

    The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen...... in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific...

  5. Internal positron source production with a cyclotron and vacancy study in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kawasuso, Atsuo; Masuno, Shin-ichi; Okada, Sohei [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Hasegawa, Masayuki; Suezawa, Masashi

    1997-03-01

    In order to detect thermal vacancies in Si, in situ positron annihilation measurement has been performed using an internal source method. An increase (decrease) in S-parameter (W-parameter) was observed above 1200degC. It was explained in terms of the formation of thermal vacancies. (author)

  6. Attenuation of Thermal Neutrons by Crystalline Silicon

    International Nuclear Information System (INIS)

    Adib, M.; Habib, N.; Ashry, A.; Fathalla, M.

    2002-01-01

    A simple formula is given which allows to calculate the contribution of the total neutron cross - section including the Bragg scattering from different (hkt) planes to the neutron * transmission through a solid crystalline silicon. The formula takes into account the silicon form of poly or mono crystals and its parameters. A computer program DSIC was developed to provide the required calculations. The calculated values of the total neutron cross-section of perfect silicon crystal at room and liquid nitrogen temperatures were compared with the experimental ones. The obtained agreement shows that the simple formula fits the experimental data with sufficient accuracy .A good agreement was also obtained between the calculated and measured values of polycrystalline silicon in the energy range from 5 eV to 500μ eV. The feasibility study on using a poly-crystalline silicon as a cold neutron filter and mono-crystalline as a thermal neutron one is given. The optimum crystal thickness, mosaic spread, temperature and cutting plane for efficiently transmitting the thermal reactor neutrons, while rejecting both fast neutrons and gamma rays accompanying the thermal ones for the mono crystalline silicon are also given

  7. Electrical properties of pressure quenched silicon by thermal spraying

    International Nuclear Information System (INIS)

    Tan, S.Y.; Gambino, R.J.; Sampath, S.; Herman, H.

    2007-01-01

    High velocity thermal spray deposition of polycrystalline silicon film onto single crystal substrates, yields metastable high pressure forms of silicon in nanocrystalline form within the deposit. The phases observed in the deposit include hexagonal diamond-Si, R-8, BC-8 and Si-IX. The peculiar attribute of this transformation is that it occurs only on orientation silicon substrate. The silicon deposits containing the high pressure phases display a substantially higher electrical conductivity. The resistivity profile of the silicon deposit containing shock induced metastable silicon phases identified by X-ray diffraction patterns. The density of the pressure induced polymorphic silicon is higher at deposit/substrate interface. A modified two-layer model is presented to explain the resistivity of the deposit impacted by the pressure induced polymorphic silicon generated by the thermal spraying process. The pressure quenched silicon deposits on the p - silicon substrate, with or without metastable phases, display the barrier potential of about 0.72 eV. The measured hall mobility value of pressure quenched silicon deposits is in the range of polycrystalline silicon. The significance of this work lies in the fact that the versatility of thermal spray may enable applications of these high pressure forms of silicon

  8. Positron annihilation in Si and Si-related materials in thermal equilibrium at high temperature

    International Nuclear Information System (INIS)

    Uedono, A.; Muramatsu, M.; Ubukata, T.; Tanino, H.; Shiraishi, T.; Tanigawa, S.; Takasu, S.

    2001-01-01

    Annihilation characteristics of positrons in the carbon/Si structure in thermal equilibrium at high temperature were studied using a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured as a function of incident positron energy in the temperature range between 298 K and 1473 K. Above 1173 K, the value of S corresponding to the annihilation of positrons near the carbon/Si interface started to increase, which was attributed to the carbonization of Si and the introduction of open-space defects due to the diffusion of Si atoms toward the carbon layer. The behavior of Ps in a thermally grown SiO 2 film was also studied at 298-1523 K. (orig.)

  9. Evaluation of Timepix silicon detector for the detection of 18F positrons

    Science.gov (United States)

    Wang, Q.; Tous, J.; Liu, Z.; Ziegler, S.; Shi, K.

    2014-05-01

    Timepix is an evolving energy and position sensitive pixel detector. It consists of a silicon detector (sensitive layer 300 μm thick) bump-bonded to the Timepix readout chip developed by the Medipix2 collaboration. This study aims to test the feasibility of using the acquired energy and position signals from Timepix for positron imaging. The signals of the commonly used fluorine-18 PET (positron emission tomography) tracer [18F]FDG were measured using Timepix operated both in single particle counting (Medipix) and in time over threshold (TOT) modes. The spatial resolution (SR) was measured using the absorber edge method (AEM) and was calculated from the over-sampled line spread function. The track of a positron in the Timepix detector was characterized as a cluster and the energy weighted centroid of each cluster was considered as readout for the position of the positron incidence. The measurement results were compared with theoretical predictions using Monte-Carlo simulations. In addition, imaging of a tissue slice of a mouse heart was analysed with reference to standard phosphor plate imaging. Our results show that the SR was improved from 177.1±4.1 μm (centroid without energy weighting) to 155.5±3.1 μm μm (centroid with energy weighting). About 12% enhancement of SR was achieved with energy information in TOT mode. The sensitivity of Timepix was 0.35 cps/Bq based on the measurements. The measuring background and the ratio between detected positrons and gamma rays were also evaluated and were found to be consistent with theoretical predictions. A small enhancement of image quality was also achieved by applying energy information to the data of the measured tissue sample. Our results show that the inclusion of energy information could slightly enhance the positron measurement compared to without energy information and the Timepix provides a high SR and sensitivity for positron detection. Thus, Timepix is a potentially effective tool for 2D positron imaging.

  10. Thermal Properties of the Silicon Microstrip Endcap Detector

    CERN Document Server

    Feld, Lutz; Hammarström, R

    1998-01-01

    Irradiated silicon detectors must be cooled in order to guarantee stable short and long term operation. Using the SiF1 milestone prototype we have performed a detailed analysis of the thermal properties of the silicon microstrip endcap detector. The strongest constraint on the cooling system is shown to be set by the need to avoid thermal runaway of the silicon detectors. We show that, taking into account the radiation damage to the silicon after 10 years of LHC operation and including some safety margin, the detector will need a cooling fluid temperature of around -20 C. The highest temperature on the silicon will then be in the range -15 C to -10 C. This sets an upper limit on the ambient temperature in the tracker volume.

  11. Positron mobility in thermally grown SiO2 measured by Doppler broadening technique

    International Nuclear Information System (INIS)

    Kong, Y.; Leung, T.C.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K.G.

    1991-01-01

    The positron mobility in thermally grown SiO 2 is deduced from Doppler broadening lineshape data on a metal-oxide-semiconductor sample for positrons implanted into the oxide layer. The fitted mobility is ∼13(10)x10 -3 cm 2 /s V. This value is between that of the electron and hole mobilities in the same system and is two orders of magnitude smaller than the previous estimate from positron measurements

  12. 18F-FDG positron autoradiography with a particle counting silicon pixel detector.

    Science.gov (United States)

    Russo, P; Lauria, A; Mettivier, G; Montesi, M C; Marotta, M; Aloj, L; Lastoria, S

    2008-11-07

    We report on tests of a room-temperature particle counting silicon pixel detector of the Medipix2 series as the detector unit of a positron autoradiography (AR) system, for samples labelled with (18)F-FDG radiopharmaceutical used in PET studies. The silicon detector (1.98 cm(2) sensitive area, 300 microm thick) has high intrinsic resolution (55 microm pitch) and works by counting all hits in a pixel above a certain energy threshold. The present work extends the detector characterization with (18)F-FDG of a previous paper. We analysed the system's linearity, dynamic range, sensitivity, background count rate, noise, and its imaging performance on biological samples. Tests have been performed in the laboratory with (18)F-FDG drops (37-37 000 Bq initial activity) and ex vivo in a rat injected with 88.8 MBq of (18)F-FDG. Particles interacting in the detector volume produced a hit in a cluster of pixels whose mean size was 4.3 pixels/event at 11 keV threshold and 2.2 pixels/event at 37 keV threshold. Results show a sensitivity for beta(+) of 0.377 cps Bq(-1), a dynamic range of at least five orders of magnitude and a lower detection limit of 0.0015 Bq mm(-2). Real-time (18)F-FDG positron AR images have been obtained in 500-1000 s exposure time of thin (10-20 microm) slices of a rat brain and compared with 20 h film autoradiography of adjacent slices. The analysis of the image contrast and signal-to-noise ratio in a rat brain slice indicated that Poisson noise-limited imaging can be approached in short (e.g. 100 s) exposures, with approximately 100 Bq slice activity, and that the silicon pixel detector produced a higher image quality than film-based AR.

  13. Positron annihilation in thermally quenched YBa2Cu3O7-x

    International Nuclear Information System (INIS)

    Hong Zhang; Xiao-Gang Wang; Yao-Xian Fu

    1988-01-01

    Trapping effects related directly with the oxygen vacancy in YBa 2 Cu 3 O 7-x are studied by the aid of positron lifetime and positron annihilation Doppler energy spectra of a thermally quenched sample. Results indicate that the trapping center is linearly related with the oxygen vacancy. Vacancies are ordered in the orthorhombic phase and disordered in the tetragonal phase on the Cu-O plane

  14. Thermal conductivity of silicon nanocrystals and polystyrene nanocomposite thin films

    International Nuclear Information System (INIS)

    Juangsa, Firman Bagja; Muroya, Yoshiki; Nozaki, Tomohiro; Ryu, Meguya; Morikawa, Junko

    2016-01-01

    Silicon nanocrystals (SiNCs) are well known for their size-dependent optical and electronic properties; they also have the potential for low yet controllable thermal properties. As a silicon-based low-thermal conductivity material is required in microdevice applications, SiNCs can be utilized for thermal insulation. In this paper, SiNCs and polymer nanocomposites were produced, and their thermal conductivity, including the density and specific heat, was measured. Measurement results were compared with thermal conductivity models for composite materials, and the comparison shows a decreasing value of the thermal conductivity, indicating the effect of the size and presence of the nanostructure on the thermal conductivity. Moreover, employing silicon inks at room temperature during the fabrication process enables a low cost of fabrication and preserves the unique properties of SiNCs. (paper)

  15. Scattering of thermal photons by a 46 GeV positron beam at LEP

    International Nuclear Information System (INIS)

    Bini, C.; De Zorzi, G.; Diambrini-Palazzi, G.; Di Cosimo, G.; Di Domenico, A.; Gauzzi, P.; Zanello, D.

    1991-01-01

    The scattering of thermal photons present in the vacuum pipe of LEP against the high energy positron beam has been detected. The spectrum of the back-scattered photons is presented for a positron beam energy of 46.1 GeV. Measurements have been performed in the interaction region 1 with the LEP-5 experiment calorimeter. (orig.)

  16. Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

    Science.gov (United States)

    Arutyunov, N.; Emtsev, V.; Krause-Rehberg, R.; Elsayed, M.; Kessler, C.; Kozlovski, V.; Oganesyan, G.

    2015-06-01

    Defects in phosphorus-doped silicon samples of floating-zone material, n-FZ-Si(P), produced under irradiation with 15 MeV protons at room temperature are studied by positron annihilation lifetime spectroscopy over the temperature range of ∼ 30 K - 300 K and by low- temperature Hall effect measurements. After annealing of E-centersand divacancies, we detected for the first time high concentrations of positron traps which had not been observed earlier. These defects are isochronally annealed over the temperature interval of ∼ 320 °C - 700 °C they manifest themselves as electrically neutral deep donor centersin the material of n-type. A long-lived component of the positron lifetime, τ2(I2 enthalpy and entropy of annealing of these centersare Ea ∼ 1.05(0.21) eV and ΔSm ≈ 3.1(0.6)kB, respectively. It is argued that the microstructure of the defect consists of two vacancies, VV, and one atom of phosphorus, P. The split configuration of the VPV complex is shortly discussed.

  17. On the use of silicon as thermal neutron filter

    International Nuclear Information System (INIS)

    Adib, M.; Habib, N.; Ashry, A.; Fathalla, M.

    2003-01-01

    A simple formula is given which allows to calculate the contribution of the total neutron cross-section including the Bragg scattering from different (hkl) planes to the neutron transmission through a solid crystalline silicon. The formula takes into account the silicon form of poly or mono crystals and its parameters. A computer program DSIC was developed to provide the required calculations. The calculated values of the total neutron cross-section of perfect silicon crystal at room and liquid nitrogen temperatures were compared with the experimental ones. The obtained agreement shows that the simple formula fits the experimental data with sufficient accuracy. A good agreement was also obtained between the calculated and measured values of polycrystalline silicon in the energy range from 5 eV to 500 μeV. The feasibility study on using a poly-crystalline silicon as a cold neutron filter and mono-crystalline as a thermal neutron one is given. The optimum crystal thickness, mosaic spread, temperature and cutting plane for efficiently transmitting the thermal reactor neutrons, while rejecting both fast neutrons and gamma rays accompanying the thermal ones for the mono crystalline silicon are also given

  18. On the use of silicon as thermal neutron filter

    Energy Technology Data Exchange (ETDEWEB)

    Adib, M.; Habib, N.; Ashry, A.; Fathalla, M. E-mail: mohamedfathalla@hotmail.com

    2003-12-01

    A simple formula is given which allows to calculate the contribution of the total neutron cross-section including the Bragg scattering from different (hkl) planes to the neutron transmission through a solid crystalline silicon. The formula takes into account the silicon form of poly or mono crystals and its parameters. A computer program DSIC was developed to provide the required calculations. The calculated values of the total neutron cross-section of perfect silicon crystal at room and liquid nitrogen temperatures were compared with the experimental ones. The obtained agreement shows that the simple formula fits the experimental data with sufficient accuracy. A good agreement was also obtained between the calculated and measured values of polycrystalline silicon in the energy range from 5 eV to 500 {mu}eV. The feasibility study on using a poly-crystalline silicon as a cold neutron filter and mono-crystalline as a thermal neutron one is given. The optimum crystal thickness, mosaic spread, temperature and cutting plane for efficiently transmitting the thermal reactor neutrons, while rejecting both fast neutrons and gamma rays accompanying the thermal ones for the mono crystalline silicon are also given.

  19. Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

    2010-01-01

    We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

  20. Thermally-isolated silicon-based integrated circuits and related methods

    Science.gov (United States)

    Wojciechowski, Kenneth; Olsson, Roy H.; Clews, Peggy J.; Bauer, Todd

    2017-05-09

    Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

  1. Method of making thermally-isolated silicon-based integrated circuits

    Science.gov (United States)

    Wojciechowski, Kenneth; Olsson, Roy; Clews, Peggy J.; Bauer, Todd

    2017-11-21

    Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

  2. Positron annihilation and thermally stimulated current of electron beam irradiated polyetheretherketone

    Energy Technology Data Exchange (ETDEWEB)

    Fujita, Shigetaka; Shinyama, Katsuyoshi; Baba, Makoto [Hachinohe Inst. of Tech., Hachinohe, Aomori (Japan); Suzuki, Takenori

    1997-03-01

    Positron lifetime measurements were applied to electron beam irradiated poly(ether-ether-ketone). The lifetime, {tau}{sub 3}, of the ortho-positronium of unirradiated and 5 MGy irradiated specimen became rapidly longer above about 150degC. {tau}{sub 3} of 50 MGy and 100 MGy irradiated specimen was shorter than that of unirradiated one. Thermally stimulated current (TSC) decreased with increasing the dose before voltage application. In the case of voltage application, a TSC peak appeared and the peak value decreased with increased the dose. The correlation between the results of positron annihilation and TSC was investigated. (author)

  3. Molecular dynamics study of the thermal expansion coefficient of silicon

    Energy Technology Data Exchange (ETDEWEB)

    Nejat Pishkenari, Hossein, E-mail: nejat@sharif.edu; Mohagheghian, Erfan; Rasouli, Ali

    2016-12-16

    Due to the growing applications of silicon in nano-scale systems, a molecular dynamics approach is employed to investigate thermal properties of silicon. Since simulation results rely upon interatomic potentials, thermal expansion coefficient (TEC) and lattice constant of bulk silicon have been obtained using different potentials (SW, Tersoff, MEAM, and EDIP) and results indicate that SW has a better agreement with the experimental observations. To investigate effect of size on TEC of silicon nanowires, further simulations are performed using SW potential. To this end, silicon nanowires of different sizes are examined and their TEC is calculated by averaging in different directions ([100], [110], [111], and [112]) and various temperatures. Results show that as the size increases, due to the decrease of the surface effects, TEC approaches its bulk value. - Highlights: • MD simulations of TEC and lattice constant of bulk silicon. • Effects of four potentials on the results. • Comparison to experimental data. • Investigating size effect on TEC of silicon nanowires.

  4. Thermal carbonization of nanoporous silicon

    Indian Academy of Sciences (India)

    An interesting phenomenon is observed while carrying out thermal carbonization of porous silicon (PS) with an aim to arrest the natural surface degradation, and it is a burning issue for PS-based device applications. A tubular carbon structure has been observed on the PS surface. Raman, Fourier transform infrared ...

  5. Measurements of Silicon Detector Thermal Runaway

    CERN Document Server

    Heusch, C A; Moser, H G

    1999-01-01

    We measured thermal runaway properties of previously irradiated silicon detectors cooled by TPG bars. We simulated their expected behaviour to measure the energy gap in the detector material and to test the validity of various underlying assumptions.

  6. An anisotropic thermal-stress model for through-silicon via

    Science.gov (United States)

    Liu, Song; Shan, Guangbao

    2018-02-01

    A two-dimensional thermal-stress model of through-silicon via (TSV) is proposed considering the anisotropic elastic property of the silicon substrate. By using the complex variable approach, the distribution of thermal-stress in the substrate can be characterized more accurately. TCAD 3-D simulations are used to verify the model accuracy and well agree with analytical results (model can be integrated into stress-driven design flow for 3-D IC , leading to the more accurate timing analysis considering the thermal-stress effect. Project supported by the Aerospace Advanced Manufacturing Technology Research Joint Fund (No. U1537208).

  7. Positron probing of open vacancy volume of phosphorus-vacancy complexes in float-zone n-type silicon irradiated by 0.9-MeV electrons and by 15-MeV protons

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, Nikolay [Department of Physics, Martin Luther University Halle (Germany); Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Institute of Ion-Plasma and Laser Technologies (Institute of Electronics), Tashkent (Uzbekistan); Emtsev, Vadim; Oganesyan, Gagik [Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Elsayed, Mohamed [Department of Physics, Martin Luther University Halle (Germany); Faculty of Science, Department of Physics, Minia University (Egypt); Krause-Rehberg, Reinhard [Department of Physics, Martin Luther University Halle (Germany); Abrosimov, Nikolay [Leibniz Institute for Crystal Growth, Berlin (Germany); Kozlovski, Vitalii [St. Petersburg State Polytechnical University (Russian Federation)

    2017-07-15

    For the first time the samples, cut from the same wafer of crystals of float-zone silicon, n-FZ-Si(P) and n-FZ-Si(Bi), were subjected to irradiation with 0.9-MeV electrons and 15-MeV protons at RT for studying them by low-temperature positron annihilation lifetime spectroscopy. Measurements of Hall effect have been used for the materials characterization. The discussion is focused on the open vacancy volume (V{sub op}) of the thermally stable group-V-impurity-vacancy complexes comprising the phosphorus atoms; the bismuth-related vacancy complexes are briefly considered. The data of positron probing of PV pairs (E-centers), divacancies, and the thermally stable defects in the irradiated n-FZ-Si(P) materials are compared. Beyond a reliable detecting of the defect-related positron annihilation lifetime in the course of isochronal annealing at ∝ 500 C, the recovery of concentration of phosphorus-related shallow donor states continues up to ∝650-700 C. The open vacancy volumes V{sub op} to be characterized by long positron lifetimes Δτ{sub 2} ∝271-289 ps in (gr.-V-atom)-V{sub op} complexes are compared with theoretical data available for the vacancies, τ(V{sub 1}), and divacancies, τ(V{sub 2}). The extended semi-vacancies, 2V{sub s-ext}, and relaxed vacancies, 2V{sub inw}, are proposed as the open volume V{sub op} in (gr.-V-atom)-V{sub op} complexes. It is argued that at high annealing temperature the defect P{sub s}-V{sub op}-P{sub s} is decomposed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

    Science.gov (United States)

    Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

    2013-03-02

    Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

  9. Thermal conductivity anisotropy in holey silicon nanostructures and its impact on thermoelectric cooling

    Science.gov (United States)

    Ren, Zongqing; Lee, Jaeho

    2018-01-01

    Artificial nanostructures have improved prospects of thermoelectric systems by enabling selective scattering of phonons and demonstrating significant thermal conductivity reductions. While the low thermal conductivity provides necessary temperature gradients for thermoelectric conversion, the heat generation is detrimental to electronic systems where high thermal conductivity are preferred. The contrasting needs of thermal conductivity are evident in thermoelectric cooling systems, which call for a fundamental breakthrough. Here we show a silicon nanostructure with vertically etched holes, or holey silicon, uniquely combines the low thermal conductivity in the in-plane direction and the high thermal conductivity in the cross-plane direction, and that the anisotropy is ideal for lateral thermoelectric cooling. The low in-plane thermal conductivity due to substantial phonon boundary scattering in small necks sustains large temperature gradients for lateral Peltier junctions. The high cross-plane thermal conductivity due to persistent long-wavelength phonons effectively dissipates heat from a hot spot to the on-chip cooling system. Our scaling analysis based on spectral phonon properties captures the anisotropic size effects in holey silicon and predicts the thermal conductivity anisotropy ratio up to 20. Our numerical simulations demonstrate the thermoelectric cooling effectiveness of holey silicon is at least 30% greater than that of high-thermal-conductivity bulk silicon and 400% greater than that of low-thermal-conductivity chalcogenides; these results contrast with the conventional perception preferring either high or low thermal conductivity materials. The thermal conductivity anisotropy is even more favorable in laterally confined systems and will provide effective thermal management solutions for advanced electronics.

  10. Thermal conductivity anisotropy in holey silicon nanostructures and its impact on thermoelectric cooling.

    Science.gov (United States)

    Ren, Zongqing; Lee, Jaeho

    2018-01-26

    Artificial nanostructures have improved prospects of thermoelectric systems by enabling selective scattering of phonons and demonstrating significant thermal conductivity reductions. While the low thermal conductivity provides necessary temperature gradients for thermoelectric conversion, the heat generation is detrimental to electronic systems where high thermal conductivity are preferred. The contrasting needs of thermal conductivity are evident in thermoelectric cooling systems, which call for a fundamental breakthrough. Here we show a silicon nanostructure with vertically etched holes, or holey silicon, uniquely combines the low thermal conductivity in the in-plane direction and the high thermal conductivity in the cross-plane direction, and that the anisotropy is ideal for lateral thermoelectric cooling. The low in-plane thermal conductivity due to substantial phonon boundary scattering in small necks sustains large temperature gradients for lateral Peltier junctions. The high cross-plane thermal conductivity due to persistent long-wavelength phonons effectively dissipates heat from a hot spot to the on-chip cooling system. Our scaling analysis based on spectral phonon properties captures the anisotropic size effects in holey silicon and predicts the thermal conductivity anisotropy ratio up to 20. Our numerical simulations demonstrate the thermoelectric cooling effectiveness of holey silicon is at least 30% greater than that of high-thermal-conductivity bulk silicon and 400% greater than that of low-thermal-conductivity chalcogenides; these results contrast with the conventional perception preferring either high or low thermal conductivity materials. The thermal conductivity anisotropy is even more favorable in laterally confined systems and will provide effective thermal management solutions for advanced electronics.

  11. Thermal and optical properties of porous silicon

    Directory of Open Access Journals (Sweden)

    Silva A. Ferreira da

    2001-01-01

    Full Text Available Thermal diffusivity and optical absorption have been investigated for porous silicon, at room temperature, using photoacoustic spectroscopy. The experimental results obtained conform well with the existing studies recently published. The value obtained for thermal diffusivity is 0.045 ± 0.002 cm²/s.The absorption onsets show energy structures, differing from the ordinary semiconductor of bulk type.

  12. Carbon nanotube-copper exhibiting metal-like thermal conductivity and silicon-like thermal expansion for efficient cooling of electronics.

    Science.gov (United States)

    Subramaniam, Chandramouli; Yasuda, Yuzuri; Takeya, Satoshi; Ata, Seisuke; Nishizawa, Ayumi; Futaba, Don; Yamada, Takeo; Hata, Kenji

    2014-03-07

    Increasing functional complexity and dimensional compactness of electronic devices have led to progressively higher power dissipation, mainly in the form of heat. Overheating of semiconductor-based electronics has been the primary reason for their failure. Such failures originate at the interface of the heat sink (commonly Cu and Al) and the substrate (silicon) due to the large mismatch in thermal expansion coefficients (∼300%) of metals and silicon. Therefore, the effective cooling of such electronics demands a material with both high thermal conductivity and a similar coefficient of thermal expansion (CTE) to silicon. Addressing this demand, we have developed a carbon nanotube-copper (CNT-Cu) composite with high metallic thermal conductivity (395 W m(-1) K(-1)) and a low, silicon-like CTE (5.0 ppm K(-1)). The thermal conductivity was identical to that of Cu (400 W m(-1) K(-1)) and higher than those of most metals (Ti, Al, Au). Importantly, the CTE mismatch between CNT-Cu and silicon was only ∼10%, meaning an excellent compatibility. The seamless integration of CNTs and Cu was achieved through a unique two-stage electrodeposition approach to create an extensive and continuous interface between the Cu and CNTs. This allowed for thermal contributions from both Cu and CNTs, resulting in high thermal conductivity. Simultaneously, the high volume fraction of CNTs balanced the thermal expansion of Cu, accounting for the low CTE of the CNT-Cu composite. The experimental observations were in good quantitative concurrence with the theoretically described 'matrix-bubble' model. Further, we demonstrated identical in-situ thermal strain behaviour of the CNT-Cu composite to Si-based dielectrics, thereby generating the least interfacial thermal strain. This unique combination of properties places CNT-Cu as an isolated spot in an Ashby map of thermal conductivity and CTE. Finally, the CNT-Cu composite exhibited the greatest stability to temperature as indicated by its low

  13. Application of positron annihilation techniques for semiconductor studies

    International Nuclear Information System (INIS)

    Karwasz, G.P.; Zecca, A.; Brusa, R.S.; Pliszka, D.

    2004-01-01

    Positron annihilation techniques, being non-destructive, allowing depth profiling down to a few micrometers and detecting open-volume defects (vacancies, dislocations etc.) at single ppm concentrations constitute a valuable and complementary method, compared to other solid-state-physics studies. We give examples of investigation in the field of semiconductors with different techniques, both with and without use of positron low-energy beams. The Doppler broadening of the 511 keV annihilation line method and the slow positron beam were used to study helium-implanted silicon and the surface reduction processes in semiconducting glasses. The positron lifetime technique and coincidence spectra of the Doppler broadening were used for systematic studies of metals and semiconductors. Doppler-coincidence method was then used to identify the kinetics of oxygen precipitates in Czochralski-grown silicon

  14. A parylene-filled-trench technique for thermal isolation in silicon-based microdevices

    International Nuclear Information System (INIS)

    Lei Yinhua; Wang Wei; Li Ting; Jin Yufeng; Zhang Haixia; Li Zhihong; Yu Huaiqiang; Luo Yingcun

    2009-01-01

    Microdevices prepared in a silicon substrate have been widely used in versatile fields due to the matured silicon-based microfabrication technique and the excellent physical properties of silicon material. However, the high thermal conductivity of silicon restricts its application in most thermal microdevices, especially devices comprising different temperature zones. In this work, a parylene-filled-trench technique was optimized to realize high-quality thermal isolation in silicon-based microdevices. Parylene C, a heat transfer barricading material, was deposited on parallel high-aspect-ratio trenches, which surrounded the isolated target zones. After removing the remnant silicon beneath the trenches by deep reactive ion etching from the back side, a high-quality heat transfer barrier was obtained. By using narrow trenches, only 5 µm thick parylene was required for a complete filling, which facilitated multi-layer interconnection thereafter. The parylene filling performance inside the high-aspect-ratio trench was optimized by two approaches: multiple etch–deposition cycling and trench profile controlling. A 4 × 6 array, in which each unit was kept at a constant temperature and was well thermally isolated individually, was achieved on a silicon substrate by using the present parylene-filled-trench technique. The preliminary experimental results indicated that the present parylene-filled-trench structure exhibited excellent thermal isolation performance, with a very low power requirement of 0.134 mW (K mm 2 ) −1 for heating the isolated silicon unit and a high thermal isolation efficiency of 72.5% between two adjacent units. Accompanied with high-quality isolation performance, the microdevices embedded the present parylene-filled-trench structure to retain a strong mechanical connection larger than 400 kPa between two isolated zones, which is very important for a high-reliability-required micro-electro-mechanical-system (MEMS) device. Considering its room

  15. Thermal simulations of the new design for the BELLE silicon vertex detector

    International Nuclear Information System (INIS)

    Dragic, J.

    2000-01-01

    Full text: The experienced imperfections of the BELLE silicon vertex detector, SVD1 motioned the design of a new detector, SVD2, which targets on improving the main weaknesses encountered in the old design. In this report we focus on tile thermal aspects of the SVD2 ladder, whereby sufficient cooling of the detector is necessary in order to minimise the detector leakage currents. It is estimated that reducing the temperature of the silicon detector from 25 deg C to 15 deg C would result in a 50% reduction in leak current. Further, cooling the detector would help minimize mechanical stresses from the thermal cycling. Our task is to ensure that the heat generated by the readout chips is conducted down the SVD hybrid unit effectively, such that the chip and the hybrid temperature does not overbear the SVD silicon sensor temperature. We considered the performance of two materials to act as a heat spreading plate which is glued between the two hybrids in order to improve the heat conductivity of the hybrid unit, namely Copper and Thermal Pyrolytic Graphite (TPG). The effects of other ladder components were also considered in order to enhance the cooling of the silicon detectors. Finite element analysis with ANSYS software was used to simulate the thermal conditions of the SVD2 hybrid unit, in accordance with the baseline design for the mechanical structure of the ladder. It was found that Cu was a preferred material as it achieved equivalent silicon sensor cooling (3.6 deg C above cooling point), while its mechanical properties rendered it a lot more practical. Suppressing, the thermal path via a rib support block, by increasing its thermal resistivity, as well as increasing thermal conductivity of the ribs in the hybrid region, were deemed essential in the effective cooling of the silicon sensors

  16. Positron annihilation studies on reactor irradiated and thermal annealed ferrocene

    International Nuclear Information System (INIS)

    Marques Netto, A.; Carvalho, R.S.; Magalhaes, W.F.; Sinisterra, R.D.

    1996-01-01

    Retention and thermal annealing following (n, γ) reaction in solid ferrocene, Fe(C 5 H 5 ) 2 , were studied by positron annihilation lifetime spectroscopy (PAL). Positronium (Ps) formation was observed in the non-irradiated compound with a probability or intensity (I 3 ) of 30%. Upon irradiation of the compound with thermal neutrons in a nuclear reactor, I 3 decreases with increasing irradiation time. Thermal treatment again increases I 3 values from 16% to 25%, revealing an important proportion of molecular reformation without variation of the ortho-positronium lifetime (τ 3 ). These results point out the major influence of the electronic structure as determining the Ps yields in the pure complex. In the irradiated and non irradiated complexes the results are satisfactorily explained on the basis of the spur model. (orig.)

  17. Design and Characterization of a Three-Dimensional Positron Annihilation Spectroscopy System Using a Low-Energy Positron Beam

    Science.gov (United States)

    2012-03-22

    Technique Applied to Measure Oxygen -Atom Defects in 6H Silicon Carbide”. 2010. [31] Y. C. Jean , P. E. Mallon and D. M. Schrader. Principles and Applications...that result in β+ emission, by photon interactions with nuclei and subsequent pair production, or by β+ decays from radioactive isotopes made by...reactions for creating positrons [7], some of which are used to to create radioactive isotopes that β+ decay. Regardless of the positron source, positrons

  18. Importance of non-local electron-positron correlations for positron annihilation characteristics in solids

    International Nuclear Information System (INIS)

    Rubaszek, A.

    2001-01-01

    Several methods to describe the electron-positron (e-p) correlation effects are used in calculations of positron annihilation characteristics in solids. The weighted density approximation (WDA), giving rise to the non-local, state-selective e-p correlation functions, is applied to calculate positron annihilation rates and e-p momentum densities in a variety of metals and silicon. The WDA results are compared to the results of other methods such as the independent particle model, local density approximation, generalised gradient approximation, and also to experiments. The importance of non-locality and state-dependence of the e-p correlation functions is discussed. (orig.)

  19. Positron annihilation spectroscopic studies of 6H silicon carbide

    International Nuclear Information System (INIS)

    Hu, Y.F.; Lam, C.H.; Ling, C.C.; Fung, S.; Beling, C.D.; Weng, H.M.

    2001-01-01

    Positron lifetime measurements have been performed on p-type and n-type 6H-SiC with temperatures varying from 10 K to 290 K. The V C V Si divacancy is observed in both types of 6H-SiC where the V Si related defect is only found in the n-type material. Positron trapping into a defect with lifetime value close to the bulk was found to compete with positron trapping into V Si or V C V Si at temperatures lower than 80 K. The positron diffusion length of the 1400 C annealed n-type 6H-SiC has also been measured at different temperatures with the use of a positron beam. Positron diffusion was found to be limited by acoustic phonon scattering at T=150-300 K. However, at T=50-150 K, D + follows T 2.12±0.02 and the details of the physical process is not yet known. (orig.)

  20. Ultrahigh thermal conductivity of isotopically enriched silicon

    Science.gov (United States)

    Inyushkin, Alexander V.; Taldenkov, Alexander N.; Ager, Joel W.; Haller, Eugene E.; Riemann, Helge; Abrosimov, Nikolay V.; Pohl, Hans-Joachim; Becker, Peter

    2018-03-01

    Most of the stable elements have two and more stable isotopes. The physical properties of materials composed of such elements depend on the isotopic abundance to some extent. A remarkably strong isotope effect is observed in the phonon thermal conductivity, the principal mechanism of heat conduction in nonmetallic crystals. An isotopic disorder due to random distribution of the isotopes in the crystal lattice sites results in a rather strong phonon scattering and, consequently, in a reduction of thermal conductivity. In this paper, we present new results of accurate and precise measurements of thermal conductivity κ(T) for silicon single crystals having three different isotopic compositions at temperatures T from 2.4 to 420 K. The highly enriched crystal containing 99.995% of 28Si, which is one of the most perfect crystals ever synthesized, demonstrates a thermal conductivity of about 450 ± 10 W cm-1 K-1 at 24 K, the highest measured value among bulk dielectrics, which is ten times greater than the one for its counterpart natSi with the natural isotopic constitution. For highly enriched crystal 28Si and crystal natSi, the measurements were performed for two orientations [001] and [011], a magnitude of the phonon focusing effect on thermal conductivity was determined accurately at low temperatures. The anisotropy of thermal conductivity disappears above 31 K. The influence of the boundary scattering on thermal conductivity persists sizable up to much higher temperatures (˜80 K). The κ(T) measured in this work gives the most accurate approximation of the intrinsic thermal conductivity of single crystal silicon which is determined solely by the anharmonic phonon processes and diffusive boundary scattering over a wide temperature range.

  1. Thermal Stress of Surface of Mold Cavities and Parting Line of Silicone Molds

    Directory of Open Access Journals (Sweden)

    Bajčičák Martin

    2014-06-01

    Full Text Available The paper is focused on the study of thermal stress of surface of mold cavities and parting line of silicone molds after pouring. The silicone mold White SD - THT was thermally stressed by pouring of ZnAl4Cu3 zinc alloy with pouring cycle 20, 30 and 40 seconds. The most thermally stressed part of surface at each pouring cycle is gating system and mold cavities. It could be further concluded that linear increase of the pouring cycle time leads to the exponential increasing of the maximum temperature of mold surface after its cooling. The elongated pouring cycle increases the temperature accumulated on the surface of cavities and the ability of silicone mold to conduct the heat on its surface decreases, because the low thermal conductivity of silicone molds enables the conduction of larger amount of heat into ambient environment.

  2. SensL B-Series and C-Series silicon photomultipliers for time-of-flight positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    O' Neill, K., E-mail: koneill@sensl.com; Jackson, C., E-mail: cjackson@sensl.com

    2015-07-01

    Silicon photomultipliers from SensL are designed for high performance, uniformity and low cost. They demonstrate peak photon detection efficiency of 41% at 420 nm, which is matched to the output spectrum of cerium doped lutetium orthosilicate. Coincidence resolving time of less than 220 ps is demonstrated. New process improvements have lead to the development of C-Series SiPM which reduces the dark noise by over an order of magnitude. In this paper we will show characterization test results which include photon detection efficiency, dark count rate, crosstalk probability, afterpulse probability and coincidence resolving time comparing B-Series to the newest pre-production C-Series. Additionally we will discuss the effect of silicon photomultiplier microcell size on coincidence resolving time allowing the optimal microcell size choice to be made for time of flight positron emission tomography systems.

  3. Positron annihilation spectroscopy in defects of semiconductors

    International Nuclear Information System (INIS)

    Fujinami, Masanori

    2002-01-01

    Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 18 cm -3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 15 cm -2 ) silicon and oxygen-implanted (180 keV, 2x10 15 cm -2 ) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V 6 O 2 at 600degC and V 10 O 6 at 800degC. (S.Y.)

  4. Toward a European Network of Positron Laboratories

    Directory of Open Access Journals (Sweden)

    Karwasz Grzegorz P.

    2015-12-01

    Full Text Available Some applications of controlled-energy positron beams in material studies are discussed. In porous organic polysilicates, measurements of 3γ annihilation by Doppler broadening (DB method at the Trento University allowed to trace pore closing and filling by water vapor. In silicon coimplanted by He+ and H+, DB data combined with positron lifetime measurements at the München pulsed positron beam allowed to explain Si blistering. Presently measured samples of W for applications in thermonuclear reactors, irradiated by W+ and electrons, show vast changes of positron lifetimes, indicating complex dynamics of defects.

  5. A possible role for silicon microstrip detectors in nuclear medicine Compton imaging of positron emitters

    CERN Document Server

    Scannavini, M G; Royle, G J; Cullum, I; Raymond, M; Hall, G; Iles, G

    2002-01-01

    Collimation of gamma-rays based on Compton scatter could provide in principle high resolution and high sensitivity, thus becoming an advantageous method for the imaging of radioisotopes of clinical interest. A small laboratory prototype of a Compton camera is being constructed in order to initiate studies aimed at assessing the feasibility of Compton imaging of positron emitters. The design of the camera is based on the use of a silicon collimator consisting of a stack of double-sided, AC-coupled microstrip detectors (area 6x6 cm sup 2 , 500 mu m thickness, 128 channels/side). Two APV6 chips are employed for signal readout on opposite planes of each detector. This work presents the first results on the noise performance of the silicon strip detectors. Measurements of the electrical characteristics of the detector are also reported. On the basis of the measured noise, an angular resolution of approximately 5 deg. is predicted for the Compton collimator.

  6. The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy

    Science.gov (United States)

    Pang, Jinbiao; Li, Hui; Zhou, Kai; Wang, Zhu

    2012-07-01

    An analysis program for positron annihilation lifetime spectra is only applicable to isolated defects, but is of no use in the presence of defective correlations. Such limitations have long caused problems for positron researchers in their studies of complicated defective systems. In order to solve this problem, we aim to take a semiconductor material, for example, to achieve a credible average lifetime of single crystal silicon under plastic deformation at different temperatures using positron life time spectroscopy. By establishing reasonable positron trapping models with defective correlations and sorting out four lifetime components with multiple parameters, as well as their respective intensities, information is obtained on the positron trapping centers, such as the positron trapping rates of defects, the density of the dislocation lines and correlation between the dislocation lines, and the vacancy defects, by fitting with the average lifetime with the aid of Matlab software. These results give strong grounds for the existence of dislocation-vacancy correlation in plastically deformed silicon, and lay a theoretical foundation for the analysis of positron lifetime spectra when the positron trapping model involves dislocation-related defects.

  7. The role of nitrogen in the formation of oxygen-related thermal donors in silicon

    International Nuclear Information System (INIS)

    Griffin, J.A.; Hartung, J.; Weber, J.

    1989-01-01

    Nitrogen doped silicon is investigated by Photothermal Ionisation Spectroscopy (PTIS) and Infrared Absorption (IR). The Shallow Thermal Donors (STD) are observed in this nitrogen doped Cz-silicon as well as the deeper Thermal Donors (TD). The Thermal Donor Growth in nitrogen doped material is reduced in comparison to nominally undoped oxygen-rich silicon. The half-widths of the spectral lines arising from the STD-transitions are observed to be dependent on the nitrogen concentration. The results suggest only a catalytic role of N in the STD-growth. (author) 13 refs., 3 figs., 1 tab

  8. A positron annihilation lifetime spectroscopy study of porous silicon using a continuous lifetime fitting algorithm

    International Nuclear Information System (INIS)

    Derlet, P.M.; Choy, T.C.

    1996-01-01

    In the present work we report on a positron annihilation lifetime spectroscopy (PALS) investigation of porous silicon using a continuous lifetime fitting algorithm. Our motivation lies in the underlying disadvantage in discrete lifetime fitting algorithms where the number of components must initially be assumed since in general a realistic spectrum does not uniquely determine this number. This becomes particularly apparent when looking at highly disordered systems where the notion of a discrete spectrum may be invalid and indeed crucial to an understanding of the optical absorption and photo-luminescence properties. Using the PALS data collected from different porous silicon samples in conjunction with other methods of characterisation, we have extended the findings of previous work. In particular we resolve three rather than two ortho-positronium components, suggesting that there may be an additional intermediary scale of porosity in which ortho-positronium annihilates. We also establish the existence of a very weak ortho-positronium component in the pre-anodised wafers at a time scale approximately equal to the longest time ortho-positronium component seen in porous silicon, suggesting that irregularities of a particular magnitude exist before anodisation and that these may, in part, be the catalyst for the initial pore formation process

  9. Thermally promoted addition of undecylenic acid on thermally hydrocarbonized porous silicon optical reflectors

    OpenAIRE

    Jalkanen, Tero; Mäkilä, Ermei; Sakka, Tetsuo; Salonen, Jarno; Ogata, Yukio H

    2012-01-01

    Thermally promoted addition of undecylenic acid is studied as a method for modifying porous silicon optical reflectors that have been pre-treated with thermal hydrocarbonization. Successful derivatization of undecylenic acid is demonstrated and confirmed with Fourier transform infrared and X-ray photoelectron spectroscopies. The results indicate that the hydrocarbonization pre-treatment considerably improves stability against oxidation and chemical dissolution in basic environments. The two-s...

  10. Desorption of surface positrons: A source of free positronium at thermal velocities

    International Nuclear Information System (INIS)

    Mills, A.P. Jr.; Pfeiffer, L.

    1979-01-01

    A direct measurement is reported of the velocity of positronium (Ps) ejected into a vacuum when 0- to 100-eV positrons (e + ) strike a negatively biased Cu(111) surface. At 30 0 C, about half the e + form Ps with normal energy component E-bar=3.4(3) eV. At 790 0 C, most of the remaining e + form Ps but with E-bar=0.14(1) eV, and a non-Maxwellian thermal distribution. We infer that surface-bound e + are thermally desorbed to form the extra Ps. These low Ps velocities suggest exciting possibilities for experiments on free Ps

  11. Thermal Oxidation of Structured Silicon Dioxide

    DEFF Research Database (Denmark)

    Christiansen, Thomas Lehrmann; Hansen, Ole; Jensen, Jørgen Arendt

    2014-01-01

    The topography of thermally oxidized, structured silicon dioxide is investigated through simulations, atomic force microscopy, and a proposed analytical model. A 357 nm thick oxide is structured by removing regions of the oxide in a masked etch with either reactive ion etching or hydrofluoric acid....... Subsequent thermal oxidation is performed in both dry and wet ambients in the temperature range 950◦C to 1100◦C growing a 205 ± 12 nm thick oxide in the etched mask windows. Lifting of the original oxide near the edge of the mask in the range 6 nm to 37 nm is seen with increased lifting for increasing...

  12. Influence of thermal effects induced by nonlinear absorption on four-wave mixing in silicon waveguides

    DEFF Research Database (Denmark)

    Pu, Minhao; Chen, Yaohui; Yvind, Kresten

    2014-01-01

    Influence of thermal effects induced by nonlinear absorption on four-wave mixing in silicon waveguides is investigated. A conversion bandwidth reduction up to 63% is observed in simulation due to the thermal effects.......Influence of thermal effects induced by nonlinear absorption on four-wave mixing in silicon waveguides is investigated. A conversion bandwidth reduction up to 63% is observed in simulation due to the thermal effects....

  13. Linear thermal expansion measurements on silicon from 6 to 340 K

    International Nuclear Information System (INIS)

    Lyon, K.G.; Salinger, G.L.; Swenson, C.A.; White, G.K.

    1977-01-01

    Linear thermal expansion measurements have been carried out from 6 to 340 K on a high-purity silicon sample using a linear absolute capacitance dilatometer. The accuracy of the measurements varies from +- 0.01 x 10 -8 K -1 at the lowest temperatures to +- 0.1 x 10 -8 K -1 or 0.1%, whichever is greater, near room temperature, and is sufficient to establish silicon as a thermal expansion standard for these temperatures. The agreement with previous data is satisfactory at low temperatures and excellent above room temperature where laser-interferometry data of comparable accuracy exist. Thermal expansions calculated from ultrasonic and heat-capacity data are preferred below 13 K where experimental problems occurred

  14. Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

    Directory of Open Access Journals (Sweden)

    Zaoyang Li

    2016-01-01

    Full Text Available We carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat transfer and silicon crystal growth. It is found that the crucible plays an important role in heat transfer, and therefore its thermal conductivity can influence the crystal growth significantly in the entire DS process. Increasing the crucible thermal conductivity can shorten the time for melting of silicon feedstock and growing of silicon crystal significantly, and therefore large thermal conductivity is helpful in saving both production time and power energy. However, the high temperature gradient in the silicon ingots and the locally concave melt-crystal interface shape for large crucible thermal conductivity indicate that high thermal stress and dislocation propagation are likely to occur during both growing and annealing stages. Based on the numerical simulations, some discussions on designing and choosing the crucible thermal conductivity are presented.

  15. Hardness and thermal stability of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Kragh, Flemming; Frost, D. J.

    2001-01-01

    The hardness and thermal stability of cubic spinel silicon nitride (c-Si3N4), synthesized under high-pressure and high-temperature conditions, have been studied by microindentation measurements, and x-ray powder diffraction and scanning electron microscopy, respectively The phase at ambient...

  16. Positron annihilation spectroscopy in defects of semiconductors

    CERN Document Server

    Fujinami, M

    2002-01-01

    Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 sup 1 sup 8 cm sup - sup 3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon and oxygen-implanted (180 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V sub 6 O sub 2 at 600degC and V sub 1 sub 0 O sub 6 at 800degC. (S.Y.)

  17. Rapid thermal annealing of phosphorus implanted silicon

    International Nuclear Information System (INIS)

    Lee, Y.H.; Pogany, A.; Harrison, H.B.; Williams, J.S.

    1985-01-01

    Rapid thermal annealing (RTA) of phosphorus-implanted silicon has been investigated by four point probe, Van der Pauw methods and transmission electron microscopy. The results have been compared to furnace annealing. Experiments show that RTA, even at temperatures as low as 605 deg C, results in good electrical properties with little remnant damage and compares favourably with furnace annealing

  18. Positron annihilation studies of the Al-Ca-Zn superplastic alloy: thermal and thermomechanical contribution

    International Nuclear Information System (INIS)

    Ayciriex, M.D.; Romero, R.; Somoza, A.; Silvetti, S.P.; Villagra, O.

    1993-01-01

    Positron annihilation spectroscopy (PAS) is an established method for the study of electronic structure and defect properties in metals and alloys. The application of this technique to the study of positron trapping in grain boundaries and related phenomena, however, is relatively scarce. The physical basis for the application of PAS to the study of grain boundaries is the fact that grain boundaries are regions of low atomic density which result in attractive sites to the trap positions. The superplastic alloys are particularly suitable materials to be studied with PAS; they have a fine-grained structure, and therefore a high density of grain boundaries. Moreover, in the annealed condition, they have a low density of other types of defects capable of trapping positrons, such as dislocations. This type of polycrystalline material can undergo extremely high deformations (up to hundreds and thousands percent) in a certain temperature-strain rate range without macroscopic failure. This paper is part of a whole study of the thermal and thermomechanical effects on the positron lifetime parameters and their relation with microstructural changes and the phenomenon of structural superplasticity in a Al-Ca-Zn alloy

  19. Forming of nanocrystal silicon films by implantation of high dose of H+ in layers of silicon on isolator and following fast thermal annealing

    International Nuclear Information System (INIS)

    Tyschenko, I.E.; Popov, V.P.; Talochkin, A.B.; Gutakovskij, A.K.; Zhuravlev, K.S.

    2004-01-01

    Formation of nanocrystalline silicon films during rapid thermal annealing of the high-dose H + ion implanted silicon-on-insulator structures was studied. It was found, that Si nanocrystals had formed alter annealings at 300-400 deg C, their formation being strongly limited by the hydrogen content in silicon and also by the annealing time. It was supposed that the nucleation of crystalline phase occurred inside the silicon islands between micropores. It is conditioned by ordering Si-Si bonds as hydrogen atoms are leaving their sites in silicon network. No coalescence of micropores takes place during the rapid thermal annealing at the temperatures up to ∼ 900 deg C. Green-orange photoluminescence was observed on synthesized films at room temperature [ru

  20. Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique

    International Nuclear Information System (INIS)

    Sheng, Chan Kok; Mahmood Mat Yunus, W.; Yunus, Wan Md. Zin Wan; Abidin Talib, Zainal; Kassim, Anuar

    2008-01-01

    In this work, the porous silicon layer was prepared by the electrochemical anodization etching process on n-type and p-type silicon wafers. The formation of the porous layer has been identified by photoluminescence and SEM measurements. The optical absorption, energy gap, carrier transport and thermal properties of n-type and p-type porous silicon layers were investigated by analyzing the experimental data from photoacoustic measurements. The values of thermal diffusivity, energy gap and carrier transport properties have been found to be porosity-dependent. The energy band gap of n-type and p-type porous silicon layers was higher than the energy band gap obtained for silicon substrate (1.11 eV). In the range of porosity (50-76%) of the studies, our results found that the optical band-gap energy of p-type porous silicon (1.80-2.00 eV) was higher than that of the n-type porous silicon layer (1.70-1.86 eV). The thermal diffusivity value of the n-type porous layer was found to be higher than that of the p-type and both were observed to increase linearly with increasing layer porosity

  1. MEMS monocrystalline-silicon based thermal devices for chemical and microfluidic applications

    NARCIS (Netherlands)

    Mihailovic, M.

    2011-01-01

    This thesis explores the employment of monocrystalline silicon in microsystems as an active material for different thermal functions, such as heat generation and heat transfer by conduction. In chapter 1 applications that need thermal micro devices, micro heaters and micro heat exchangers, are

  2. Theory, development, and applications of the scanning positron microbeam and positron reemission microscope

    International Nuclear Information System (INIS)

    Brandes, G.R.

    1990-01-01

    The theory, design, development, and applications of two new imaging instruments, the scanning positron microbeam (SPM) and positron reemission microscope (PRM), are discussed. The SPM consists of a sectored lens which focuses and rasters the positrons from the beam across the sample. The results of rastering the 10μm x 50μm beam across a test grid demonstrate the SPM's ability to scan a 500μm diameter region and to resolve features with ∼ 5μm resolution. The SPM was used to examine the location of defects in a Si-on-SiO 2 sample. Possible applications to three dimensional defect spectroscopy and the observation of small samples are considered. In the PRM, the positrons from the brightness-enhanced beam are focused at 5keV to an 8/Am diameter spot (FWHM) onto a thin metal single crystal. An image of the opposing side of the film is formed by accelerating and focusing the reemitted thermalized positrons with a cathode lens objective and a projector lens. The final image (real) is a record of the thermal positron emission intensity versus position. Images of surface and subsurface defect structures, taken at magnifications up to 4400x and with a resolution up to 80nm, are presented and discussed. The ultimate resolution capabilities and possible applications of the PRM are examined. The implantation and diffusion process of positrons was studied with the PRM by examining the positron emission profile of 3-9keV positrons implanted into a 2200 angstrom thick Ni single crystal

  3. Thermal neutron scattering kernels for sapphire and silicon single crystals

    International Nuclear Information System (INIS)

    Cantargi, F.; Granada, J.R.; Mayer, R.E.

    2015-01-01

    Highlights: • Thermal cross section libraries for sapphire and silicon single crystals were generated. • Debye model was used to represent the vibrational frequency spectra to feed the NJOY code. • Sapphire total cross section was measured at Centro Atómico Bariloche. • Cross section libraries were validated with experimental data available. - Abstract: Sapphire and silicon are materials usually employed as filters in facilities with thermal neutron beams. Due to the lack of the corresponding thermal cross section libraries for those materials, necessary in calculations performed in order to optimize beams for specific applications, here we present the generation of new thermal neutron scattering kernels for those materials. The Debye model was used in both cases to represent the vibrational frequency spectra required to feed the NJOY nuclear data processing system in order to produce the corresponding libraries in ENDF and ACE format. These libraries were validated with available experimental data, some from the literature and others obtained at the pulsed neutron source at Centro Atómico Bariloche

  4. Thermal endurance tests on silicone rubber specimens

    International Nuclear Information System (INIS)

    Warburton, C.

    1977-07-01

    Thermal endurance tests have been performed on a range of silicone rubber specimens at temperature above 300 0 C. It is suggested that the rubber mix A2426, the compound from which Wylfa sealing rings are manufactured, will fail at temperatures above 300 0 C within weeks. Hardness measurements show that this particular rubber performs in a similar manner to Walker's S.I.L./60. (author)

  5. Silicon photomultipliers for positron emission tomography detectors with depth of interaction encoding capability

    International Nuclear Information System (INIS)

    Taghibakhsh, Farhad; Reznik, Alla; Rowlands, John A.

    2011-01-01

    Silicon photomultipliers (SiPMs) are receiving increasing attention in the field of positron emission tomography (PET) detectors. Compared to photomultiplier tubes, they offer novel detector configurations for the extraction of depth of interaction (DOI) information, or enable emerging medical imaging modalities such as simultaneous PET-magnetic resonant imaging (MRI). In this article, we used 2x2x20 mm 3 LYSO scintillator crystals coupled to SiPMs on both ends (dual-ended readout configuration) to evaluate the detector performance for DOI-PET applications. We investigated the effect of scintillator crystal surface finishing on sensitivity and resolution of DOI, as well as on energy and timing resolution. Measurements indicate DOI sensitivity and resolution of 7.1% mm -1 and 2.1±0.6 mm for saw-cut, and 1.3% mm -1 and 9.0±1.5 mm, for polished scintillator crystals, respectively. Energy resolution varies from 19% when DOI is in the center, to 15% with DOI at either end of the saw-cut crystal, while it remains constant at ∼14% for polished scintillators. Based on our results we conclude that 2x2x20 mm 3 saw-cut (without any special side wall polishing) LYSO crystals coupled to 2x2 mm 2 silicon photomultipliers are optimal for isotropic 2 mm resolution DOI-PET applications.

  6. Extreme temperature stability of thermally insulating graphene-mesoporous-silicon nanocomposite

    Science.gov (United States)

    Kolhatkar, Gitanjali; Boucherif, Abderraouf; Rahim Boucherif, Abderrahim; Dupuy, Arthur; Fréchette, Luc G.; Arès, Richard; Ruediger, Andreas

    2018-04-01

    We demonstrate the thermal stability and thermal insulation of graphene-mesoporous-silicon nanocomposites (GPSNC). By comparing the morphology of GPSNC carbonized at 650 °C as-formed to that after annealing, we show that this nanocomposite remains stable at temperatures as high as 1050 °C due to the presence of a few monolayers of graphene coating on the pore walls. This does not only make this material compatible with most thermal processes but also suggests applications in harsh high temperature environments. The thermal conductivity of GPSNCs carbonized at temperatures in the 500 °C-800 °C range is determined through Raman spectroscopy measurements. They indicate that the thermal conductivity of the composite is lower than that of silicon, with a value of 13 ± 1 W mK-1 at room temperature, and not affected by the thin graphene layer, suggesting a role of the high concentration of carbon related-defects as indicated by the high intensity of the D-band compared to G-band of the Raman spectra. This morphological stability at high temperature combined with a high thermal insulation make GPSNC a promising candidate for a broad range of applications including microelectromechanical systems and thermal effect microsystems such as flow sensors or IR detectors. Finally, at 120 °C, the thermal conductivity remains equal to that at room temperature, attesting to the potential of using our nanocomposite in devices that operate at high temperatures such as microreactors for distributed chemical conversion, solid oxide fuel cells, thermoelectric devices or thermal micromotors.

  7. Thermal oxidation of silicon with two oxidizing species

    International Nuclear Information System (INIS)

    Vild-Maior, A.A.; Filimon, S.

    1979-01-01

    A theoretical model for the thermal oxidation of silicon in wet oxygen is presented. It is shown that the presence of oxygen in the oxidation furnace has an important effect when the water temperature is not too high (less than about 65 deg C). The model is in good agreement with the experimental data. (author)

  8. An attempt to specify thermal history in CZ silicon wafers and possibilities for its modification

    International Nuclear Information System (INIS)

    Kissinger, G.; Sattler, A.; Mueller, T.; Ammon, W. von

    2007-01-01

    The term thermal history of silicon wafers represents the whole variety of process parameters of crystal growth. The aim of this contribution is an attempt to specify thermal history by one parameter that is directly correlated to the bulk microdefect density. The parameter that reflects thermal history and correlates it with nucleation of oxide precipitates is the concentration of VO 2 complexes. The VO 2 concentration in silicon wafers is too low to be measured by FTIR but it can be obtained from the loss of interstitial oxygen during a standardized thermal treatment. Based on this, the vacancy concentration frozen during crystal cooling in the ingot can be calculated. RTA treatments above 1150 deg. C create a well defined level of the VO 2 concentration in silicon wafers. This means that a well controlled modification of the thermal history is possible. We also investigated the kinetics of reduction of the as-grown excess VO 2 concentration during RTA treatments at 950 deg. C and 1050 deg. C and the effectiveness of this attempt to totally delete the thermal history

  9. The effects of low-energy scattering on positron implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ritley, K.A. (Dept. of Physics and Materials Research Laboratory, Univ. of Illinois, Urbana, IL (United States)); Lynn, K.G.; Ghosh, V.; Welch, D.O. (Brookhaven National Lab., Upton, NY (United States))

    1992-01-01

    Existing Monte Carlo models are capable of simulating the behavior of positrons incident at keV energies, then following the energy loss process to arbitrary final kinetic energies of from 20 eV to 100 eV. This work describes a Monte Carlo simulation of the final stages of positron thermalization in Al, from 25 eV to thermal energies, via the mechanisms of conduction-electron and longitudinal acoustic phonon scattering. The latter stages of thermalization can have important effects on the stopping profiles and mean depth. A novel way to obtain information about positron energy loss by considering the time-evolution of a point-concentration (delta-function distribution) of positrons is described. The effects of a positive positron work function are examined for the first time in the context of a positron Monte Carlo calculation. Finally, some issues relating to the agreement of Monte Carlo calculations with experimental data are discussed. 6 figs., 16 refs.

  10. The effects of low-energy scattering on positron implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ritley, K.A. [Dept. of Physics and Materials Research Laboratory, Univ. of Illinois, Urbana, IL (United States); Lynn, K.G.; Ghosh, V.; Welch, D.O. [Brookhaven National Lab., Upton, NY (United States)

    1992-12-31

    Existing Monte Carlo models are capable of simulating the behavior of positrons incident at keV energies, then following the energy loss process to arbitrary final kinetic energies of from 20 eV to 100 eV. This work describes a Monte Carlo simulation of the final stages of positron thermalization in Al, from 25 eV to thermal energies, via the mechanisms of conduction-electron and longitudinal acoustic phonon scattering. The latter stages of thermalization can have important effects on the stopping profiles and mean depth. A novel way to obtain information about positron energy loss by considering the time-evolution of a point-concentration (delta-function distribution) of positrons is described. The effects of a positive positron work function are examined for the first time in the context of a positron Monte Carlo calculation. Finally, some issues relating to the agreement of Monte Carlo calculations with experimental data are discussed. 6 figs., 16 refs.

  11. Positron and positronium annihilation in silica-based thin films studied by a pulsed positron beam

    International Nuclear Information System (INIS)

    Suzuki, R.; Ohdaira, T.; Kobayashi, Y.; Ito, K.; Shioya, Y.; Ishimaru, T.

    2003-01-01

    Positron and positronium annihilation in silica-based thin films has been investigated by means of measurement techniques with a monoenergetic pulsed positron beam. The age-momentum correlation study revealed that positron annihilation in thermally grown SiO 2 is basically the same as that in bulk amorphous SiO 2 while o-Ps in the PECVD grown SiCOH film predominantly annihilate with electrons of C and H at the microvoid surfaces. We also discuss time-dependent three-gamma annihilation in porous low-k films by two-dimensional positron annihilation lifetime spectroscopy

  12. Thermal conductivity engineering in width-modulated silicon nanowires and thermoelectric efficiency enhancement

    Science.gov (United States)

    Zianni, Xanthippi

    2018-03-01

    Width-modulated nanowires have been proposed as efficient thermoelectric materials. Here, the electron and phonon transport properties and the thermoelectric efficiency are discussed for dimensions above the quantum confinement regime. The thermal conductivity decreases dramatically in the presence of thin constrictions due to their ballistic thermal resistance. It shows a scaling behavior upon the width-modulation rate that allows for thermal conductivity engineering. The electron conductivity also decreases due to enhanced boundary scattering by the constrictions. The effect of boundary scattering is weaker for electrons than for phonons and the overall thermoelectric efficiency is enhanced. A ZT enhancement by a factor of 20-30 is predicted for width-modulated nanowires compared to bulk silicon. Our findings indicate that width-modulated nanostructures are promising for developing silicon nanostructures with high thermoelectric efficiency.

  13. High-field EPR spectroscopy of thermal donors in silicon

    DEFF Research Database (Denmark)

    Dirksen, R.; Rasmussen, F.B.; Gregorkiewicz, T.

    1997-01-01

    Thermal donors generated in p-type boron-doped Czochralski-grown silicon by a 450 degrees C heat treatment have been studied by high-field magnetic resonance spectroscopy. In the experiments conducted at a microwave frequency of 140 GHz and in a magnetic field of approximately 5 T four individual...

  14. Influence of silicon dangling bonds on germanium thermal diffusion within SiO{sub 2} glass

    Energy Technology Data Exchange (ETDEWEB)

    Barba, D.; Martin, F.; Ross, G. G. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Cai, R. S.; Wang, Y. Q. [The Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Demarche, J.; Terwagne, G. [LARN, Centre de Recherche en Physique de la Matière et du Rayonnement (PMR), University of Namur (FUNDP), B-5000 Namur (Belgium); Rosei, F. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Center for Self-Assembled Chemical Structures, McGill University, Montreal, Quebec H3A 2K6 (Canada)

    2014-03-17

    We study the influence of silicon dangling bonds on germanium thermal diffusion within silicon oxide and fused silica substrates heated to high temperatures. By using scanning electron microscopy and Rutherford backscattering spectroscopy, we determine that the lower mobility of Ge found within SiO{sub 2}/Si films can be associated with the presence of unsaturated SiO{sub x} chemical bonds. Comparative measurements obtained by x-ray photoelectron spectroscopy show that 10% of silicon dangling bonds can reduce Ge desorption by 80%. Thus, the decrease of the silicon oxidation state yields a greater thermal stability of Ge inside SiO{sub 2} glass, which could enable to considerably extend the performance of Ge-based devices above 1300 K.

  15. Modulation of thermal conductivity in kinked silicon nanowires: phonon interchanging and pinching effects.

    Science.gov (United States)

    Jiang, Jin-Wu; Yang, Nuo; Wang, Bing-Shen; Rabczuk, Timon

    2013-04-10

    We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at room temperature. The temperature dependence of the reduction is also calculated. By calculating phonon polarization vectors, two mechanisms are found to be responsible for the reduced thermal conductivity: (1) the interchanging effect between the longitudinal and transverse phonon modes and (2) the pinching effect, that is, a new type of localization, for the twisting and transverse phonon modes in the kinked silicon nanowires. Our work demonstrates that the phonon interchanging and pinching effects, induced by kinking, are brand-new and effective ways in modulating heat transfer in nanowires, which enables the kinked silicon nanowires to be a promising candidate for thermoelectric materials.

  16. Silicon Nanowires for Solar Thermal Energy Harvesting: an Experimental Evaluation on the Trade-off Effects of the Spectral Optical Properties.

    Science.gov (United States)

    Sekone, Abdoul Karim; Chen, Yu-Bin; Lu, Ming-Chang; Chen, Wen-Kai; Liu, Chia-An; Lee, Ming-Tsang

    2016-12-01

    Silicon nanowire possesses great potential as the material for renewable energy harvesting and conversion. The significantly reduced spectral reflectivity of silicon nanowire to visible light makes it even more attractive in solar energy applications. However, the benefit of its use for solar thermal energy harvesting remains to be investigated and has so far not been clearly reported. The purpose of this study is to provide practical information and insight into the performance of silicon nanowires in solar thermal energy conversion systems. Spectral hemispherical reflectivity and transmissivity of the black silicon nanowire array on silicon wafer substrate were measured. It was observed that the reflectivity is lower in the visible range but higher in the infrared range compared to the plain silicon wafer. A drying experiment and a theoretical calculation were carried out to directly evaluate the effects of the trade-off between scattering properties at different wavelengths. It is clearly seen that silicon nanowires can improve the solar thermal energy harnessing. The results showed that a 17.8 % increase in the harvest and utilization of solar thermal energy could be achieved using a silicon nanowire array on silicon substrate as compared to that obtained with a plain silicon wafer.

  17. Defect Characterization in Semiconductors with Positron Annihilation Spectroscopy

    Science.gov (United States)

    Tuomisto, Filip

    Positron annihilation spectroscopy is an experimental technique that allows the selective detection of vacancy defects in semiconductors, providing a means to both identify and quantify them. This chapter gives an introduction to the principles of the positron annihilation techniques and then discusses the physics of some interesting observations on vacancy defects related to growth and doping of semiconductors. Illustrative examples are selected from studies performed in silicon, III-nitrides, and ZnO.

  18. Positron beam studies of transients in semiconductors

    International Nuclear Information System (INIS)

    Beling, C.D.; Ling, C.C.; Cheung, C.K.; Naik, P.S.; Zhang, J.D.; Fung, S.

    2006-01-01

    Vacancy-sensing positron deep level transient spectroscopy (PDLTS) is a positron beam-based technique that seeks to provide information on the electronic ionization levels of vacancy defects probed by the positron through the monitoring of thermal transients. The experimental discoveries leading to the concept of vacancy-sensing PDLTS are first reviewed. The major problem associated with this technique is discussed, namely the strong electric fields establish in the near surface region of the sample during the thermal transient which tend to sweep positrons into the contact with negligible defect trapping. New simulations are presented which suggest that under certain conditions a sufficient fraction of positrons may be trapped into ionizing defects rendering PDLTS technique workable. Some suggestions are made for techniques that might avoid the problematic electric field problem, such as optical-PDLTS where deep levels are populated using light and the use of high forward bias currents for trap filling

  19. Bioconjugate functionalization of thermally carbonized porous silicon using a radical coupling reaction†

    Science.gov (United States)

    Sciacca, Beniamino; Alvarez, Sara D.; Geobaldo, Francesco; Sailor, Michael J.

    2011-01-01

    The high stability of Salonen’s thermally carbonized porous silicon (TCPSi) has attracted attention for environmental and biochemical sensing applications, where corrosion-induced zero point drift of porous silicon-based sensor elements has historically been a significant problem. Prepared by the high temperature reaction of porous silicon with acetylene gas, the stability of this silicon carbide-like material also poses a challenge—many sensor applications require a functionalized surface, and the low reactivity of TCPSi has limited the ability to chemically modify its surface. This work presents a simple reaction to modify the surface of TCPSi with an alkyl carboxylate. The method involves radical coupling of a dicarboxylic acid (sebacic acid) to the TCPSi surface using a benzoyl peroxide initiator. The grafted carboxylic acid species provides a route for bioconjugate chemical modification, demonstrated in this work by coupling propylamine to the surface carboxylic acid group through the intermediacy of pentafluorophenol and 1-ethyl-3-[3-dimethylaminopropyl]carbodiimide hydrochloride (EDC). The stability of the carbonized porous Si surface, both before and after chemical modification, is tested in phosphate buffered saline solution and found to be superior to either hydrosilylated (with undecylenic acid) or thermally oxidized porous Si surfaces. PMID:20967329

  20. Positron sources for electron-positron colliders application to the ILC and CLIC

    CERN Multimedia

    CERN. Geneva

    2008-01-01

    The increased demanding qualities for positron sources dedicated to e+e- colliders pushed on investigations oriented on new kinds of e+ sources. The different kinds of positron sources polarized and no polarized are considered. Their main features (intensity, emittance) are described and analysed. Comparison between the different sources is worked out. The characteristics of the positron beam available in the collision point are greatly depending on the capture device and on the positron accelerator. Different kinds of capture systems are considered and their qualities, compared. Intense positron sources which are necessary for the colliders require intense incident beams (electrons or photons). The large number of pairs created in the targets leads to important energy deposition and so, thermal heating, which associated to temperature gradients provoke mechanical stresses often destructive. Moreover, the important Coulomb collisions, can affect the atomic structure in crystal targets and the radiation resist...

  1. Predicting the performance of amorphous and crystalline silicon based photovoltaic solar thermal collectors

    International Nuclear Information System (INIS)

    Daghigh, Ronak; Ibrahim, Adnan; Jin, Goh Li; Ruslan, Mohd Hafidz; Sopian, Kamaruzzaman

    2011-01-01

    BIPVT is an application where solar PV/T modules are integrated into the building structure. System design parameters such as thermal conductivity and fin efficiency, type of cells, type of coolant and operating conditions are factors which influence the performance of BIPVT. Attempts have been made to improve the efficiency of building-integrated photovoltaic thermal (BIPVT). A new design concept of water-based PVT collector for building-integrated applications has been designed and evaluated. The results of simulation study of amorphous silicon (a-Si) PV/T and crystalline silicon (c-Si) module types are based on the metrological condition of Malaysia for a typical day in March. At a flow rate of 0.02 kg/s, solar radiation level between 700 and 900 W/m 2 and ambient temperature between 22 and 32 o C, the electrical, thermal and combined photovoltaic thermal efficiencies for the PV/T (a-Si) were 4.9%, 72% and 77%, respectively. Moreover, the electrical, thermal and combined photovoltaic thermal efficiencies of the PV/T (c-Si) were 11.6%, 51% and 63%.

  2. Surface effects on the thermal conductivity of silicon nanowires

    Science.gov (United States)

    Li, Hai-Peng; Zhang, Rui-Qin

    2018-03-01

    Thermal transport in silicon nanowires (SiNWs) has recently attracted considerable attention due to their potential applications in energy harvesting and generation and thermal management. The adjustment of the thermal conductivity of SiNWs through surface effects is a topic worthy of focus. In this paper, we briefly review the recent progress made in this field through theoretical calculations and experiments. We come to the conclusion that surface engineering methods are feasible and effective methods for adjusting nanoscale thermal transport and may foster further advancements in this field. Project supported by the National Natural Science Foundation ofChina (Grant No. 11504418), China Scholarship Council (Grant No. 201706425053), Basic Research Program in Shenzhen, China (Grant No. JCYJ20160229165210666), and the Fundamental Research Funds for the Central Universities of China (Grant No. 2015XKMS075).

  3. Two orders of magnitude reduction in silicon membrane thermal conductivity by resonance hybridizations

    Science.gov (United States)

    Honarvar, Hossein; Hussein, Mahmoud I.

    2018-05-01

    The thermal conductivity of a freestanding single-crystal silicon membrane may be reduced significantly by attaching nanoscale pillars on one or both surfaces. Atomic resonances of the nanopillars form vibrons that intrinsically couple with the base membrane phonons causing mode hybridization and flattening at each coupling location in the phonon band structure. This in turn causes group velocity reductions of existing phonons, in addition to introducing new modes that get excited but are localized and do not transport energy. The nanopillars also reduce the phonon lifetimes at and around the hybridization zones. These three effects, which in principle may be tuned to take place across silicon's full spectrum, lead to a lowering of the in-plane thermal conductivity in the base membrane. Using equilibrium molecular dynamics simulations, and utilizing the concept of vibrons compensation, we report a staggering two orders of magnitude reduction in the thermal conductivity at room temperature by this mechanism. Specifically, a reduction of a factor of 130 is demonstrated for a roughly 10-nm-thick pillared membrane compared to a corresponding unpillared membrane. This amounts to a record reduction of a factor of 481 compared to bulk crystalline silicon and nearly a factor of 2 compared to bulk amorphous silicon. These results are obtained while providing a path for preserving performance with upscaling.

  4. All-silicon thermal independent Mach-Zehnder interferometer with multimode waveguides

    DEFF Research Database (Denmark)

    Guan, Xiaowei; Frandsen, Lars Hagedorn

    2016-01-01

    A novel all-silicon thermal independent Mach-Zehnder interferometer consisting of two multimode waveguide arms having equal lengths and widths but transmitting different modes is proposed and experimentally demonstrated. The interferometer has a temperature sensitivity smaller than 8pm/°C in a wa...

  5. An investigation of hydrogenized amorphous Si structures with Doppler broadening positron annihilation techniques

    International Nuclear Information System (INIS)

    Petkov, M.P.; Marek, T.; Asoka-Kumar, P.; Lynn, K.G.; Crandall, R.S.; Mahan, A.H.

    1998-01-01

    In this letter, we examine the feasibility of applying positron annihilation spectroscopy to the study of hydrogenized amorphous silicon (a-Si:H)-based structures produced by chemical vapor deposition techniques. The positron probe, sensitive to open volume formations, is used to characterize neutral and negatively charged silicon dangling bonds, typical for undoped and n-doped a-Si:H, respectively. Using depth profiling along the growth direction a difference was observed in the electronic environment of these defects, which enables their identification in a p-i-n device. copyright 1998 American Institute of Physics

  6. Three-dimensional modelling of thermal stress in floating zone silicon crystal growth

    Science.gov (United States)

    Plate, Matiss; Krauze, Armands; Virbulis, Jānis

    2018-05-01

    During the growth of large diameter silicon single crystals with the industrial floating zone method, undesirable level of thermal stress in the crystal is easily reached due to the inhomogeneous expansion as the crystal cools down. Shapes of the phase boundaries, temperature field and elastic material properties determine the thermal stress distribution in the solid mono crystalline silicon during cylindrical growth. Excessive stress can lead to fracture, generation of dislocations and altered distribution of intrinsic point defects. Although appearance of ridges on the crystal surface is the decisive factor of a dislocation-free growth, the influence of these ridges on the stress field is not completely clear. Here we present the results of thermal stress analysis for 4” and 5” diameter crystals using a quasi-stationary three dimensional mathematical model including the material anisotropy and the presence of experimentally observed ridges which cannot be addressed with axis-symmetric models. The ridge has a local but relatively strong influence on thermal stress therefore its relation to the origin of fracture is hypothesized. In addition, thermal stresses at the crystal rim are found to increase for a particular position of the crystal radiation reflector.

  7. Channeling and coherent bremsstrahlung effects for relativistic positrons and electrons

    International Nuclear Information System (INIS)

    Walker, R.L.

    1976-01-01

    Channeling of positrons in single crystals of silicon was observed in transmission and scattering measurements for incident energies from 16 to 28 MeV. In addition, the spectral dependence upon crystal orientation of the forward coherent bremsstrahlung produced by beams of 28-MeV positrons and electrons incident upon a 5 μm thick single crystal of silicon was measured with a NaI photon spectrometer. Effects of channeling and perhaps of the nonvalidity of the first Born approximation were observed for beam directions near the [111] axis of the crystal, and coherent peaks near 0.5 MeV were observed for a compound interference direction, in agreement with first-order theoretical calculations. 32 fig

  8. Surface roughening of silicon, thermal silicon dioxide, and low-k dielectric coral films in argon plasma

    International Nuclear Information System (INIS)

    Yin Yunpeng; Sawin, Herbert H.

    2008-01-01

    The surface roughness evolutions of single crystal silicon, thermal silicon dioxide (SiO 2 ), and low dielectric constant film coral in argon plasma have been measured by atomic force microscopy as a function of ion bombardment energy, ion impingement angle, and etching time in an inductively coupled plasma beam chamber, in which the plasma chemistry, ion energy, ion flux, and ion incident angle can be adjusted independently. The sputtering yield (or etching rate) scales linearly with the square root of ion energy at normal impingement angle; additionally, the angular dependence of the etching yield of all films in argon plasma followed the typical sputtering yield curve, with a maximum around 60 deg. -70 deg. off-normal angle. All films stayed smooth after etching at normal angle but typically became rougher at grazing angles. In particular, at grazing angles the rms roughness level of all films increased if more material was removed; additionally, the striation structure formed at grazing angles can be either parallel or transverse to the beam impingement direction, which depends on the off-normal angle. More interestingly, the sputtering caused roughness evolution at different off-normal angles can be qualitatively explained by the corresponding angular dependent etching yield curve. In addition, the roughening at grazing angles is a strong function of the type of surface; specifically, coral suffers greater roughening compared to thermal silicon dioxide

  9. Positron annihilation studies of mesoporous silica films using a slow positron beam

    International Nuclear Information System (INIS)

    He Chunqing; Muramatsu, Makoto; Ohdaira, Toshiyuki; Kinomura, Atsushi; Suzuki, Ryoichi; Ito, Kenji; Kabayashi, Yoshinori

    2006-01-01

    Positron annihilation lifetime spectra were measured for mesoporous silica films, which were synthesized using triblock copolymer (EO 106 PO 70 EO 106 ) as a structure-directing agent. Different positron lifetime spectra for the deposited and calcined films indicated the formation of meso-structure after calcination, which was confirmed by Fourier transform infrared (FTIR) spectra and field emission-scanning electron microscopy (FE-SEM) observation. Open porosity or pore interconnectivity of a silica film might be evaluated by a two-dimensional positron annihilation lifetime spectrum of an uncapped film. Pore sizes and their distributions in the silica films were found to be affected by thermal treatments

  10. Study of the thermal effect on silicon surface induced by ion beam from plasma focus device

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Z., E-mail: pscientific5@aec.org.sy [Scientific Service Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Ahmad, M. [IBA Laboratory, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Chemistry Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Al-Hawat, Sh.; Akel, M. [Physics Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic)

    2017-04-01

    Structural modifications in form of ripples and cracks are induced by nitrogen ions from plasma focus on silicon surface. The investigation of such structures reveals correlation between ripples and cracks formation in peripheral region of the melt spot. The reason of such correlation and structure formation is explained as result of thermal effect. Melting and resolidification of the center of irradiated area occur within one micro second of time. This is supported by a numerical simulation used to investigate the thermal effect induced by the plasma focus ion beams on the silicon surface. This simulation provides information about the temperature profile as well as the dynamic of the thermal propagation in depth and lateral directions. In accordance with the experimental observations, that ripples are formed in latter stage after the arrival of last ion, the simulation shows that the thermal relaxation takes place in few microseconds after the end of the ion beam arrival. Additionally, the dependency of thermal propagation and relaxation on the distance of the silicon surface from the anode is presented.

  11. Tailoring Thermal Radiative Properties with Doped-Silicon Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhuomin [Georgia Inst. of Technology, Atlanta, GA (United States)

    2017-08-28

    Aligned doped-silicon nanowire (D-SiNW) arrays form a hyperbolic metamaterial in the mid-infrared and have unique thermal radiative properties, such as broadband omnidirectional absorption, low-loss negative refraction, etc. A combined theoretical and experimental investigation will be performed to characterize D-SiNW arrays and other metamaterials for tailoring thermal radiative properties. Near-field thermal radiation between anisotropic materials with hyperbolic dispersions will also be predicted for potential application in energy harvesting. A new kind of anisotropic metamaterial with a hyperbolic dispersion in a broad infrared region has been proposed and demonstrated based on aligned doped-silicon nanowire (D-SiNW) arrays. D-SiNW-based metamaterials have unique thermal radiative properties, such as broadband omnidirectional absorption whose width and location can be tuned by varying the filling ratio and/or doping level. Furthermore, high figure of merit (FOM) can be achieved in a wide spectral region, suggesting that D-SiNW arrays may be used as a negative refraction material with much less loss than other structured materials, such as layered semiconductor materials. We have also shown that D-SiNWs and other nanostructures can significantly enhance near-field thermal radiation. The study of near-field radiative heat transfer between closely spaced objects and the electromagnetic wave interactions with micro/nanostructured materials has become an emerging multidisciplinary field due to its importance in advanced energy systems, manufacturing, local thermal management, and high spatial resolution thermal sensing and mapping. We have performed extensive study on the energy streamlines involving anisotropic metamaterials and the applicability of the effective medium theory for near-field thermal radiation. Graphene as a 2D material has attracted great attention in nanoelectronics, plasmonics, and energy harvesting. We have shown that graphene can be used to

  12. Interaction of alpha radiation with thermally-induced defects in silicon

    International Nuclear Information System (INIS)

    Ali, Akbar; Majid, Abdul

    2008-01-01

    The interaction of radiation-induced defects created by energetic alpha particles and thermally-induced defects in silicon has been studied using a Deep Level Transient Spectroscopy (DLTS) technique. Two thermally-induced defects at energy positions E c -0.48 eV and E c -0.25 eV and three radiation-induced defects E2, E3 and E5 have been observed. The concentration of both of the thermally-induced defects has been observed to increase on irradiation. It has been noted that production rates of the radiation-induced defects are suppressed in the presence of thermally-induced defects. A significant difference in annealing characteristics of thermally-induced defects in the presence of radiation-induced defects has been observed compared to the characteristics measured in pre-irradiated samples

  13. Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

    Science.gov (United States)

    Wang, Chenlei

    The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to

  14. Slow positron applications at slow positron facility of institute of materials structure science, KEK

    Science.gov (United States)

    Hyodo, Toshio; Mochizuki, Izumi; Wada, Ken; Toge, Nobukazu; Shidara, Tetsuo

    2018-05-01

    Slow Positron Facility at High Energy Accelerator Research Organization (KEK) is a user dedicated facility with an energy-tunable (0.1 - 35 keV) slow positron beam created by a dedicated ˜ 50 MeV linac. It operates in a short pulse (width 1-12 ns, variable, 5×106 e+/s) and a long pulse (width 1.2 µs, 5×107 e+/s) modes of 50 Hz. High energy positrons from pair creation are moderated by reemission after thermalization in W foils. The reemitted positrons are then electrostatically accelerated to a desired energy up to 35 keV and magnetically transported. A pulse-stretching section (pulse stretcher) is installed in the middle of the beamline. It stretches the slow positron pulse for the experiments where too many positrons annihilating in the sample at the same time has to be avoided. Four experiment stations for TRHEPD (total-reflection high-energy positron diffraction), LEPD (low-energy positron diffraction), Ps- (positronium negative ion), and Ps-TOF (positronium time-of-flight) experiments are connected to the beamline branches, SPF-A3, SPF-A4, SPF-B1 and SPF-B2, respectively. Recent results of these stations are briefly described.

  15. SiO 2/SiC interface proved by positron annihilation

    Science.gov (United States)

    Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Itoh, H.

    2003-06-01

    We have studied positron annihilation in a Silicon carbide (SiC)-metal/oxide/semiconductor (MOS) structure using a monoenergetic positron beam. The Doppler broadening of annihilation quanta were measured as functions of the incident positron energy and the gate bias. Applying negative gate bias, significant increases in S-parameters were observed. This indicates the migration of implanted positrons towards SiO 2/SiC interface and annihilation at open-volume type defects. The behavior of S-parameters depending on the bias voltage was well correlated with the capacitance-voltage ( C- V) characteristics. We observed higher S-parameters and the interfacial trap density in MOS structures fabricated using the dry oxidation method as compared to those by pyrogenic oxidation method.

  16. SiO2/SiC interface proved by positron annihilation

    International Nuclear Information System (INIS)

    Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Itoh, H.

    2003-01-01

    We have studied positron annihilation in a Silicon carbide (SiC)-metal/oxide/semiconductor (MOS) structure using a monoenergetic positron beam. The Doppler broadening of annihilation quanta were measured as functions of the incident positron energy and the gate bias. Applying negative gate bias, significant increases in S-parameters were observed. This indicates the migration of implanted positrons towards SiO 2 /SiC interface and annihilation at open-volume type defects. The behavior of S-parameters depending on the bias voltage was well correlated with the capacitance-voltage (C-V) characteristics. We observed higher S-parameters and the interfacial trap density in MOS structures fabricated using the dry oxidation method as compared to those by pyrogenic oxidation method

  17. Simulation of the diffusion of implanted impurities in silicon structures at the rapid thermal annealing

    International Nuclear Information System (INIS)

    Komarov, F.F.; Komarov, A.F.; Mironov, A.M.; Makarevich, Yu.V.; Miskevich, S.A.; Zayats, G.M.

    2011-01-01

    Physical and mathematical models and numerical simulation of the diffusion of implanted impurities during rapid thermal treatment of silicon structures are discussed. The calculation results correspond to the experimental results with a sufficient accuracy. A simulation software system has been developed that is integrated into ATHENA simulation system developed by Silvaco Inc. This program can simulate processes of the low-energy implantation of B, BF 2 , P, As, Sb, C ions into the silicon structures and subsequent rapid thermal annealing. (authors)

  18. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  19. Characteristics of the positron annihilation process in the matter

    International Nuclear Information System (INIS)

    Dryzek, J.

    2000-01-01

    In this report the positrons annihilation spectroscopy, as a method for the matter study is described. The interaction of positrons of high as well as thermal energies are discussed and different models of mentioned interactions are presented. Special attention is paid for positrons interaction with crystal lattice and its defects. The influence of positron beams characteristics on measured values are also discussed

  20. Thermal de-isolation of silicon microstructures in a plasma etching environment

    International Nuclear Information System (INIS)

    Lee, Yong-Seok; Jang, Yun-Ho; Kim, Yong-Kweon; Kim, Jung-Mu

    2013-01-01

    This paper presents a theoretical and experimental strategy for thermal de-isolation of silicon microstructures during a plasma etching process. Heat sinking blocks and thin metal layers are implemented around a thermally isolated mass to avoid severe spring width losses by a steep temperature rise. Thermal de-isolation significantly reduces the fabrication errors from −51.0% to −9.0% and from −39.5% to −6.7% for spring widths and resonant frequencies, respectively. Thermal de-isolation also reduces the standard deviation of resonant frequencies from 8.7% to 1.5% across a wafer, which clearly demonstrates the proposed method. (paper)

  1. Synergistic effect and mechanism of platinum catalyst and nitrogen-containing silane on the thermal stability of silicone rubber

    International Nuclear Information System (INIS)

    Chen, Wanjuan; Zeng, Xingrong; Lai, Xuejun; Li, Hongqiang; Fang, Weizhen; Liu, Tian

    2016-01-01

    Highlights: • Platinum (Pt) and nitrogen-containing silane (NS) were introduced into silicone rubber. • The thermal stability was improved by Pt/NS both under nitrogen and air atmosphere. • The TG-FTIR of evolved gases during degradation was performed. • The synergistic effect and mechanism of Pt and NS were proposed. - Abstract: Platinum (Pt) catalyst and nitrogen-containing silane (NS) were introduced to improve the thermal stability of silicone rubber. The effects of Pt and NS on thermal stability and degradation mechanism of silicone rubber were investigated by thermogravimetry (TG), thermogravimetry-Fourier transform infrared spectrometry (TG-FTIR), scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDXS) and Fourier transform infrared spectrometry (FTIR). A significant synergism was found between Pt and NS for improving the thermal stability of silicone rubber. When 6.67 ppm of Pt and 1.4 phr of NS were introduced, the temperature of 10% and 20% weight loss under nitrogen atmosphere were respectively increased by 36 °C and 119 °C. Meanwhile, the residue weight at 900 °C was doubled to 68% in the presence of Pt/NS. The synergistic mechanism might be that the nitrogen atom coordinated with Pt and improved the catalytic efficiency of Pt. Additionally, NS preserved the catalytic activity of Pt under air atmosphere. Hence, Pt/NS efficiently catalyzed thermal crosslinking and suppressed degradation of silicone chains. Moreover, it revealed that the presence of Pt/NS protected silicone chains from oxidation. Thus, the unzipping depolymerization by silanol groups was reduced significantly.

  2. Synergistic effect and mechanism of platinum catalyst and nitrogen-containing silane on the thermal stability of silicone rubber

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Wanjuan; Zeng, Xingrong, E-mail: psxrzeng@gmail.com; Lai, Xuejun; Li, Hongqiang; Fang, Weizhen; Liu, Tian

    2016-05-20

    Highlights: • Platinum (Pt) and nitrogen-containing silane (NS) were introduced into silicone rubber. • The thermal stability was improved by Pt/NS both under nitrogen and air atmosphere. • The TG-FTIR of evolved gases during degradation was performed. • The synergistic effect and mechanism of Pt and NS were proposed. - Abstract: Platinum (Pt) catalyst and nitrogen-containing silane (NS) were introduced to improve the thermal stability of silicone rubber. The effects of Pt and NS on thermal stability and degradation mechanism of silicone rubber were investigated by thermogravimetry (TG), thermogravimetry-Fourier transform infrared spectrometry (TG-FTIR), scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDXS) and Fourier transform infrared spectrometry (FTIR). A significant synergism was found between Pt and NS for improving the thermal stability of silicone rubber. When 6.67 ppm of Pt and 1.4 phr of NS were introduced, the temperature of 10% and 20% weight loss under nitrogen atmosphere were respectively increased by 36 °C and 119 °C. Meanwhile, the residue weight at 900 °C was doubled to 68% in the presence of Pt/NS. The synergistic mechanism might be that the nitrogen atom coordinated with Pt and improved the catalytic efficiency of Pt. Additionally, NS preserved the catalytic activity of Pt under air atmosphere. Hence, Pt/NS efficiently catalyzed thermal crosslinking and suppressed degradation of silicone chains. Moreover, it revealed that the presence of Pt/NS protected silicone chains from oxidation. Thus, the unzipping depolymerization by silanol groups was reduced significantly.

  3. Anisotropic Thermal Behavior of Silicone Polymer, DC 745

    Energy Technology Data Exchange (ETDEWEB)

    Adams, Jillian Cathleen [Univ. of Oregon, Eugene, OR (United States). Dept. of Chemistry; Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Torres, Joseph Angelo [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Volz, Heather Michelle [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Gallegos, Jennifer Marie [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Yang, Dali [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-09-02

    In material applications, it is important to understand how polymeric materials behave in the various environments they may encounter. One factor governing polymer behavior is processing history. Differences in fabrication will result in parts with varied or even unintended properties. In this work, the thermal expansion behavior of silicone DC 745 is studied. Thermomechanical analysis (TMA) is used to determine changes in sample dimension resulting from changes in temperature. This technique can measure thermal events such as the linear coefficient of thermal expansion (CTE), melting, glass transitions, cure shrinkage, and internal relaxations. Using a thermomechanical analyzer (Q400 TMA), it is determined that DC 745 expands anisotropically when heated. This means that the material has a different CTE depending upon which direction is being measured. In this study, TMA experiments were designed in order to confirm anisotropic thermal behavior in multiple DC 745 samples of various ages and lots. TMA parameters such as temperature ramp rate, preload force, and temperature range were optimized in order to ensure the most accurate and useful data. A better understanding of the thermal expansion of DC 745 will allow for more accurate modeling of systems using this material.

  4. Studies Of Oxidation And Thermal Reduction Of The Cu(100) Surface Using Positron Annihilation Induced Auger Electron Spectroscopy

    Science.gov (United States)

    Fazleev, N. G.; Nadesalingam, M. P.; Maddox, W.; Weiss, A. H.

    2011-06-01

    Positron annihilation induced Auger electron spectroscopy (PAES) measurements from the surface of an oxidized Cu(100) single crystal show a large increase in the intensity of the annihilation induced Cu M2,3VV Auger peak as the sample is subjected to a series of isochronal anneals in vacuum up to annealing temperature 300 °C. The PAES intensity then decreases monotonically as the annealing temperature is increased to ˜550 °C. Experimental positron annihilation probabilities with Cu 3p and O 1s core electrons are estimated from the measured intensities of the positron annihilation induced Cu M2,3VV and O KLL Auger transitions. PAES results are analyzed by performing calculations of positron surface states and annihilation probabilities of the surface-trapped positrons with relevant core electrons taking into account the charge redistribution at the surface and various surface structures associated with low and high oxygen coverages. The variations in atomic structure and chemical composition of the topmost layers of the oxidized Cu(100) surface are found to affect localization and spatial extent of the positron surface state wave function. The computed positron binding energy and annihilation characteristics reveal their sensitivity to charge transfer effects, atomic structure and chemical composition of the topmost layers of the oxidized Cu(100) surface. Theoretical positron annihilation probabilities with Cu 3p and O 1s core electrons computed for the oxidized Cu(100) surface are compared with experimental ones. The obtained results provide a demonstration of thermal reduction of the copper oxide surface after annealing at 300 °C followed by re-oxidation of the Cu(100) surface at higher annealing temperatures presumably due to diffusion of subsurface oxygen to the surface.

  5. Studies Of Oxidation And Thermal Reduction Of The Cu(100) Surface Using Positron Annihilation Induced Auger Electron Spectroscopy

    International Nuclear Information System (INIS)

    Fazleev, N. G.; Nadesalingam, M. P.; Maddox, W.; Weiss, A. H.

    2011-01-01

    Positron annihilation induced Auger electron spectroscopy (PAES) measurements from the surface of an oxidized Cu(100) single crystal show a large increase in the intensity of the annihilation induced Cu M2,3VV Auger peak as the sample is subjected to a series of isochronal anneals in vacuum up to annealing temperature 300 deg. C. The PAES intensity then decreases monotonically as the annealing temperature is increased to ∼550 deg. C. Experimental positron annihilation probabilities with Cu 3p and O 1s core electrons are estimated from the measured intensities of the positron annihilation induced Cu M 2,3 VV and O KLL Auger transitions. PAES results are analyzed by performing calculations of positron surface states and annihilation probabilities of the surface-trapped positrons with relevant core electrons taking into account the charge redistribution at the surface and various surface structures associated with low and high oxygen coverages. The variations in atomic structure and chemical composition of the topmost layers of the oxidized Cu(100) surface are found to affect localization and spatial extent of the positron surface state wave function. The computed positron binding energy and annihilation characteristics reveal their sensitivity to charge transfer effects, atomic structure and chemical composition of the topmost layers of the oxidized Cu(100) surface. Theoretical positron annihilation probabilities with Cu 3p and O 1s core electrons computed for the oxidized Cu(100) surface are compared with experimental ones. The obtained results provide a demonstration of thermal reduction of the copper oxide surface after annealing at 300 deg. C followed by re-oxidation of the Cu(100) surface at higher annealing temperatures presumably due to diffusion of subsurface oxygen to the surface.

  6. On new developments in the physics of positron swarms

    International Nuclear Information System (INIS)

    Petrovic, Z Lj; Bankovic, A; Dujko, S; Marjanovic, S; Suvakov, M; Malovic, G; Marler, J P; Buckman, S J; White, R D; Robson, R E

    2010-01-01

    Recently a new wave of swarm studies of positrons was initiated based on more complete scattering cross section sets. Initially some interesting and new physics was discovered, most importantly negative differential conductivity (NDC) that occurs only for the bulk drift velocity while it does not exist for the flux property. However the ultimate goal was to develop tools to model positron transport in realistic applications and the work that is progressing along these lines is reviewed here. It includes studies of positron transport in molecular gases, thermalization in generic swarm situations and in realistic gas filled traps and transport of positrons in crossed electric and magnetic fields. Finally we have extended the same technique of simulation (Monte Carlo) to studies of thermalization of positronium molecule. In addition, recently published first steps towards including effects of dense media on positron transport are summarized here.

  7. Theory of the temperature dependence of positron bulk lifetimes-implications for vacancy formation enthalpy measurements via positron experiments

    International Nuclear Information System (INIS)

    Tam, S.W.; Sinha, S.K.; Siegel, R.W.

    1977-02-01

    Temperature dependent effects, which may have a bearing on determinations of vacancy formation enthalpies in metals by positron annihilation, have been observed in certain metals. These effects have been observed to occur both at temperatures below those at which positron annihilation is most sensitive to equilibrium vacancies and at temperatures well within the vacancy-sensitive region. The effect of thermal lattice displacements on positron lifetimes in metals was investigated to help understand these phenomena

  8. Two-laser thermal-lens determination of phosphorus in silicon

    International Nuclear Information System (INIS)

    Grishko, V.I.; Gol'dshtein, M.M.; Grishko, V.P.; Yudelevich, I.G.

    1986-01-01

    Laser thermal-lens spectrophotometry is a high-sensitivity method of measuring absorptivity, where the signal is the relative intensity change at the beam center after passage through the medium, which absorbs at the laser wavelength. The two-lens method is discussed here which employs a high-power laser to induce the lens, while the absorptivity is measured from the intensity change in the beam from a continous wave low-power test laser at a wavelength different from that for the inducing one. This paper uses two-laser thermal-lens techniques to determine phosphorus in silicon. Phosphorus is determined as the ionic association of molybdophosphoric acid with auramine

  9. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Youngseok Lee

    2012-01-01

    Full Text Available It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0 which improves the efficiency of HIT solar cell. The ultrathin thermal passivation silicon oxide (SiO2 layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes. The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time. The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2 flow rate of 3 Lpm. A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness. This ultrathin SiO2 layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i layer and the passivation and tunneling effects of the silicon oxide layer were exploited. The photocurrent was decreased with the increase of illumination intensity and SiO2 thickness.

  10. Radiation damage of polymers studied by positron annihilation. Positron and gamma-ray irradiation effects

    International Nuclear Information System (INIS)

    Suzuki, T.; Oki, Y.; Numajiri, M.; Miura, T.; Kondo, K.; Ito, Y.

    1995-01-01

    Positron irradiation effects on polypropylene (PP) have been studied using positron sources ( 22 Na) during positron annihilation (PA) experiments. The irradiation effect was measured by the intensity (I 3 ) of the long-lived component of positronium (Ps). At a low temperature of around 100 K, I 3 for unirradiated PP samples increased due to a termination of the thermal motion of the -CH 3 groups. However, the increase in I 3 for γ-ray irradiated samples was reduced in inverse proportion to the amount of irradiation. Although no increase in I 3 was observed for 1 MGy-irradiated PP with γ-rays, an increase was observed again after a 48 h irradiation by positrons emitted from 22 Na. This may be due to a reconstructing of the polymer chains. (author)

  11. Low-Power Silicon-based Thermal Sensors and Actuators for Chemical Applications

    NARCIS (Netherlands)

    Vereshchagina, E.

    2011-01-01

    In the Hot Silicon project low and ultra-low-power Si-based hot surface devices have been developed, i.e. thermal sensors and actuators, for application in catalytic gas micro sensors, micro- and nano- calorimeters. This work include several scientific and technological aspects: • Design and

  12. The Positronium Radiative Combination Spectrum: Calculation in the Limit of Thermal Positrons and Low Densities

    Science.gov (United States)

    Wallyn, P.; Mahoney, W. A.; Durouchoux, Ph.; Chapuis, C.

    1996-01-01

    We calculate the intensities of the positronium de-excitation lines for two processes: (1) the radiative combination of free thermal electrons and positrons for transitions with principal quantum number n less than 20, and (2) charge exchange between free positrons and hydrogen and helium atoms, restricting our evaluation to the Lyman-alpha line. We consider a low-density medium modeled by the case A assumption of Baker & Menzel and use the "nL method" of Pengelly to calculate the absolute intensities. We also evaluate the positronium fine and hyperfine intensities and show that these transitions are in all cases much weaker than positronium de-excitation lines in the same wavelength range. We also extrapolate our positronium de-excitation intensities to the submillimeter, millimeter, and centimeter wavelengths. Our results favor the search of infrared transitions of positronium lines for point sources when the visual extinction A, is greater than approx. 5.

  13. Amorphous Silicon-Germanium Films with Embedded Nano crystals for Thermal Detectors with Very High Sensitivity

    International Nuclear Information System (INIS)

    Calleja, C.; Torres, A.; Rosales-Quintero, P.; Moreno, M.

    2016-01-01

    We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nano crystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity in thermal detectors (micro bolometers). Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9%K -1 ). Our results show that amorphous silicon-germanium films with embedded nano crystals can be used as thermo sensitive films in high performance infrared focal plane arrays (IRFPAs) used in commercial thermal cameras.

  14. The use of large area silicon sensors for thermal neutron detection

    International Nuclear Information System (INIS)

    Schulte, R.L.; Swanson, F.; Kesselman, M.

    1994-01-01

    The use of large area planar silicon detectors coupled with gadolinium foils has been investigated to develop a thermal neutron detector having a large area-efficiency (Aε) product. Noise levels due to high detector capacitance limit the size of silicon detectors that can be utilized. Calculations using the Monte Carlo code, MCNP, have been made to determine the variation of intrinsic detection efficiency as a function of the discriminator threshold level required to eliminate the detector noise. Measurements of the noise levels for planar silicon detectors of various resistivities (400, 3000 and 5000 Ω cm) have been made and the optimal detector area-efficiency products have been determined. The response of a Si-Gd-Si sandwich detector with areas between 1 cm 2 and 10.5 cm 2 is presented and the effects of the detector capacitance and reverse current are discussed. ((orig.))

  15. Positron annihilation at the Si/SiO2 interface

    International Nuclear Information System (INIS)

    Leung, T.C.; Weinberg, Z.A.; Asoka-Kumar, P.; Nielsen, B.; Rubloff, G.W.; Lynn, K.G.

    1992-01-01

    Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO 2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (S int ) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that S int depends directly on holes at interface states or traps at the Si/SiO 2 interface

  16. A Novel Silicon Micromachined Integrated MCM Thermal Management System

    Science.gov (United States)

    Kazmierczak, M. J.; Henderson, H. T.; Gerner, F. M.

    1997-01-01

    "Micromachining" is a chemical means of etching three-dimensional structures, typically in single- crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (Micro Electro Mechanical Systems), where in addition to the ordinary two-dimensional (planar) microelectronics, it is possible to build three-dimensional n-ticromotors, electrically- actuated raicrovalves, hydraulic systems and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor n-ticrofabfication. The University of Cincinnati group in collaboration with Karl Baker at NASA Lewis were the first to form micro heat pipes in silicon by the above techniques. Current work now in progress using MEMS technology is now directed towards the development of the next generation in MCM (Multi Chip Module) packaging. Here we propose to develop a complete electronic thermal management system which will allow densifica6on in chip stacking by perhaps two orders of magnitude. Furthermore the proposed technique will allow ordinary conu-nercial integrated chips to be utilized. Basically, the new technique involves etching square holes into a silicon substrate and then inserting and bonding commercially available integrated chips into these holes. For example, over a 100 1/4 in. by 1 /4 in. integrated chips can be placed on a 4 in. by 4 in. silicon substrate to form a Multi-Chip Module (MCM). Placing these MCM's in-line within an integrated rack then allows for three-diniensional stacking. Increased miniaturization of microelectronic circuits will lead to very high local heat fluxes. A high performance thermal management system will be specifically designed to remove the generated energy. More specifically, a compact heat exchanger with milli / microchannels will be developed and tested to remove the heat through the back side of this MCM assembly for moderate and high

  17. Observations of discrete energy loss effects in spectra of positrons reflected from solid surfaces

    International Nuclear Information System (INIS)

    Dale, J.M.; Hulett, L.D.; Pendyala, S.

    1980-01-01

    Surfaces of tungsten and silicon have been bombarded with monoenergetic beams of positrons and electrons. Spectra of reflected particles show energy loss tails with discrete peaks at kinetic energies about 15 eV lower than that of the elastic peaks. In the higher energy loss range for tungsten, positron spectra show fine structure that is not apparent in the electron spectra. This suggests that the positrons are losing energy through mechanisms different from that of the electrons

  18. Micro-fabricated silicon devices for advanced thermal management and integration of particle tracking detectors

    CERN Document Server

    Romagnoli, Giulia; Gambaro, Carla

    Since their first studies targeting the cooling of high-power computing chips, micro-channel devices are proven to provide a very efficient cooling system. In the last years micro-channel cooling has been successfully applied to the cooling of particle detectors at CERN. Thanks to their high thermal efficiency, they can guarantee a good heat sink for the cooling of silicon trackers, fundamental for the reduction of the radiation damage caused by the beam interactions. The radiation damage on the silicon detector is increasing with temperature and furthermore the detectors are producing heat that should be dissipated in the supporting structure. Micro-channels guarantee a distributed and uniform thermal exchange, thanks to the high flexibility of the micro-fabrication process that allows a large variety of channel designs. The thin nature of the micro-channels etched inside silicon wafers, is fulfilling the physics requirement of minimization of the material crossed by the particle beam. Furthermore micro-chan...

  19. Properties of point defects either native or induced by irradiation in the 3C and 6H polytypes of silicon carbide determined by positron annihilation and EPR

    International Nuclear Information System (INIS)

    Kerbiriou, X.

    2006-02-01

    Potential applications of silicon carbide (SiC) in micro-electronics have justified many studies on point defects, which play an important role in the electrical compensation. Moreover, this material has many assets to take part in the fissile materials confining in the gas cooled reactors of the future (4. generation). In this thesis, we have used Electronic Paramagnetic Resonance and Positron Annihilation Spectroscopy to study the properties of point defects (nature, size, charge state, migration and agglomeration during annealing), either native or induced by irradiation with various particles (H + , e - , carbon ions), in the 3C and 6H polytypes of SiC. The positron annihilation study of native defects in 6H-SiC has shown the presence of a strong concentration of non-vacancy traps of acceptor type, which are not present in the 3C-SiC crystals. The nature of the defects detected after irradiation with low energy electrons (190 keV) depends on the polytype. Indeed, while silicon Frenkel pairs and carbon mono-vacancies are detected in the 6H crystals, only carbon mono-vacancies are detected in the 3C crystals. We propose that these differences concerning the populations of detected point defects result from different values of the silicon displacement threshold energy for the two polytypes (approximately 20 eV for 6H and 25 V for 3C). In addition, the irradiations with 12 MeV protons and 132 MeV carbon ions have created silicon mono-vacancies as well as VSi-VC di-vacancies. Neither the particle (protons or ions carbon), nor the polytype (3C or 6H) influence the nature of the generated defects. Finally the study of the annealing of 6H-SiC monocrystals irradiated with 12 MeV protons have revealed several successive processes. The most original result is the agglomeration of the silicon mono-vacancies with the VSi-VC di-vacancies which leads to the formation of VSi-VC-VSi tri-vacancies. (author)

  20. Strain and thermal conductivity in ultrathin suspended silicon nanowires

    Science.gov (United States)

    Fan, Daniel; Sigg, Hans; Spolenak, Ralph; Ekinci, Yasin

    2017-09-01

    We report on the uniaxial strain and thermal conductivity of well-ordered, suspended silicon nanowire arrays between 10 to 20 nm width and 22 nm half-pitch, fabricated by extreme-ultraviolet (UV) interference lithography. Laser-power-dependent Raman spectroscopy showed that nanowires connected monolithically to the bulk had a consistent strain of ˜0.1 % , whereas nanowires clamped by metal exhibited variability and high strain of up to 2.3%, having implications in strain engineering of nanowires. The thermal conductivity at room temperature was measured to be ˜1 W /m K for smooth nanowires and ˜0.1 W /m K for rougher ones, similar to results by other investigators. We found no modification of the bulk properties in terms of intrinsic scattering, and therefore, the decrease in thermal conductivity is mainly due to boundary scattering. Different types of surface roughness, such as constrictions and line-edge roughness, may play roles in the scattering of phonons of different wavelengths. Such low thermal conductivities would allow for very efficient thermal energy harvesting, approaching and passing values achieved by state-of-the-art thermoelectric materials.

  1. The use of large area silicon sensors for thermal neutron detection

    Energy Technology Data Exchange (ETDEWEB)

    Schulte, R.L. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States)); Swanson, F. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States)); Kesselman, M. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States))

    1994-12-30

    The use of large area planar silicon detectors coupled with gadolinium foils has been investigated to develop a thermal neutron detector having a large area-efficiency (A[epsilon]) product. Noise levels due to high detector capacitance limit the size of silicon detectors that can be utilized. Calculations using the Monte Carlo code, MCNP, have been made to determine the variation of intrinsic detection efficiency as a function of the discriminator threshold level required to eliminate the detector noise. Measurements of the noise levels for planar silicon detectors of various resistivities (400, 3000 and 5000 [Omega] cm) have been made and the optimal detector area-efficiency products have been determined. The response of a Si-Gd-Si sandwich detector with areas between 1 cm[sup 2] and 10.5 cm[sup 2] is presented and the effects of the detector capacitance and reverse current are discussed. ((orig.))

  2. Analysis of equations of state and temperature dependence of thermal expansivity and bulk modulus for silicon

    International Nuclear Information System (INIS)

    Pandya, Tushar C; Bhatt, Apoorva D; Thakar, Nilesh A

    2012-01-01

    In the present paper an attempt has been made for the comparative study of different equations of state for silicon (Phase-1, cubic diamond structure) in the pressure range of 0-11 GPa. We compare the results of different equations of state (EOS) with available experimental data. The Kwon and Kim EOS is found to give far better agreement with the available experimental data. Results obtained by Poirier-Tarantola, Vinet, Tait and Suzuki's equations of state are not giving satisfactory agreement with the available experimental data. In the present study simple methods based on thermodynamic functions are presented to investigate the temperature dependence of thermal expansivity and bulk modulus for silicon. The results are reported for silicon. The calculated values of thermal expansivity are in good agreement with experimental data.

  3. Improving depth resolutions in positron beam spectroscopy by concurrent ion-beam sputtering

    Science.gov (United States)

    John, Marco; Dalla, Ayham; Ibrahim, Alaa M.; Anwand, Wolfgang; Wagner, Andreas; Böttger, Roman; Krause-Rehberg, Reinhard

    2018-05-01

    The depth resolution of mono-energetic positron annihilation spectroscopy using a positron beam is shown to improve by concurrently removing the sample surface layer during positron beam spectroscopy. During ion-beam sputtering with argon ions, Doppler-broadening spectroscopy is performed with energies ranging from 3 keV to 5 keV allowing for high-resolution defect studies just below the sputtered surface. With this technique, significantly improved depth resolutions could be obtained even at larger depths when compared to standard positron beam experiments which suffer from extended positron implantation profiles at higher positron energies. Our results show that it is possible to investigate layered structures with a thickness of about 4 microns with significantly improved depth resolution. We demonstrated that a purposely generated ion-beam induced defect profile in a silicon sample could be resolved employing the new technique. A depth resolution of less than 100 nm could be reached.

  4. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    Energy Technology Data Exchange (ETDEWEB)

    Menges, F.; Spieser, M.; Riel, H.; Gotsmann, B., E-mail: bgo@zurich.ibm.com [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Dittberner, M. [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Novotny, L. [Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Passarello, D.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)

    2016-04-25

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  5. Field induced decrystallization of silicon: Evidence of a microwave non-thermal effect

    Science.gov (United States)

    Nozariasbmarz, Amin; Dsouza, Kelvin; Vashaee, Daryoosh

    2018-02-01

    It is rather strange and not fully understood that some materials decrystallize when exposed to microwave radiation, and it is still debatable if such a transformation is a thermal or non-thermal effect. We hereby report experimental evidences that weight the latter effect. First, a single crystal silicon wafer exposed to microwaves showed strong decrystallization at high temperature. Second, when some areas of the wafer were masked with metal coating, only the exposed areas underwent decrystallization. Transmission electron microscopy analysis, x-ray diffraction data, and thermal conductivity measurements all indicated strong decrystallization, which occurred in the bulk of the material and was not a surface effect. These observations favor the existence of a non-thermal microwave effect.

  6. High-temperature equilibrium vacancy formation in ceramic materials studied by positron annihilation

    International Nuclear Information System (INIS)

    Forster, M.; Claudy, W.; Hermes, H.; Major, J.; Schaefer, H.E.; Koch, M.; Maier, K.; Stoll, H.

    1992-01-01

    Positron lifetime measurements were used in order to study thermal vacancy formation in NiO, YBa 2 Cu 3 O 7-δ , α-Al 2 O 3 , MgO and 6H-SiC at high temperatures. In NiO two increases of the positron trapping rate at 450K and 1200K (po 2 =10 5 Pa) are attributed to the change of charge of neutral extrinsic Ni-vacancies (c ≅ 10 -4 ) into a negative charge state and to the nonstochiometric formation of charged Ni-vacancies at high temperatures. In YBa 2 Cu 3 O 7-δ the oxygen loss or uptake at T > 680K with an activation enthalpy of 1.03eV can be studied by the variation of the positron lifetime with temperature and oxygen partial pressure. In α-Al 2 O 3 the positrons are annihilated from the delocalized free state between 1000K and 2250K and no positron trapping of thermally formed vacancies was detected which may be understood in terms of the theoretically predicted low concentrations of thermal vacancies. In MgO and 6H-SiC positron lifetime measurements were performed up to temperatures of about 2000K

  7. Surface modification of aluminum nitride by polysilazane and its polymer-derived amorphous silicon oxycarbide ceramic for the enhancement of thermal conductivity in silicone rubber composite

    Science.gov (United States)

    Chiu, Hsien Tang; Sukachonmakul, Tanapon; Kuo, Ming Tai; Wang, Yu Hsiang; Wattanakul, Karnthidaporn

    2014-02-01

    Polysilazane (PSZ) and its polymer-derived amorphous silicon oxycarbide (SiOC) ceramic were coated on aluminum nitride (AlN) by using a dip-coating method to allow moisture-crosslinking of PSZ on AlN, followed by heat treatment at 700 °C in air to convert PSZ into SiOC on AlN. The results from FTIR, XPS and SEM indicated that the surface of AlN was successfully coated by PSZ and SiOC film. It was found that the introduction of PSZ and SiOC film help improve in the interfacial adhesion between the modified AlN (PSZ/AlN and SiOC/AlN) and silicone rubber lead to the increase in the thermal conductivity of the composites since the thermal boundary resistance at the filler-matrix interface was decreased. However, the introduction of SiOC as an intermediate layer between AlN and silicone rubber could help increase the thermal energy transport at the filler-matrix interface rather than using PSZ. This result was due to the decrease in the surface roughness and thickness of SiOC film after heat treatment at 700 °C in air. Thus, in the present work, a SiOC ceramic coating could provide a new surface modification for the improvement of the interfacial adhesion between the thermally conductive filler and the matrix in which can enhance the thermal conductivity of the composites.

  8. Positron annihilation and thermoluminescence studies of thermally induced defects in α-Al2O3 single crystals

    International Nuclear Information System (INIS)

    Muthe, K P; Gupta, S K; Sudarshan, K; Pujari, P K; Kulkarni, M S; Rawat, N S; Bhatt, B C

    2009-01-01

    α-Al 2 O 3 crystals were subjected to different thermal treatments at a temperature of 1500 deg. C in a strongly reducing ambience of carbon and vacuum. Positron annihilation spectroscopy (PAS) and thermally stimulated luminescence (TL) studies were carried out to understand the nature of defects generated. Results show the presence of aluminium vacancies in crystals annealed in vacuum. On annealing in the presence of graphite, ingress of carbon in these vacancies is indicated by different PAS measurements. A simultaneous enhancement of dosimetry properties has been observed. The study provides evidence that association of carbon with aluminium vacancies helps in creation of effective dosimetry traps.

  9. Use of specific features of electron and positron interactions with monocrystals for the control of high-energy particle beam parameters

    International Nuclear Information System (INIS)

    Bochek, G.L.; Vit'ko, V.I.; Grishaev, I.A.; Kovalenko, G.D.; Kulibaba, V.I.; Morokhovskij, V.L.; Shramenko, B.I.

    1977-01-01

    To study possibilities of using the effect of high energy positron and electron interactions with crystals in practice at the 2 GeV Kharkov lineac the effect of a light particle charge sign on the processes of bremsstrahlung, elastic scattering and revealing ''blocking effect'' in elastic scatterina has been investigated experimentally of 1 GeV electron (positron) beam is directed to a silicon crystal of 185 μkm thickness. Dependence of total bremsstrahlung flow on the angle between the beam direction and crystal axis has shown, that positron bremsstrahlung is minimum (positrons are channelling, but electron bremsstrahlung is maximum, when crystallographic axis direction coincides with particle direction. The process of positron annihilation in flight has been investigated in 300 μkm thick silicon monocrystal. Bremsstrahlung intensity for channeling positrons drops 4.4 times, and intensity of annihilation radiation - 1.6 times as compared to the case, when channeling regime is absent. Experimental data point out the possibility of using monocrystals for control of the parameters of high-energy particle control beams

  10. Structure and physical properties of silicon clusters and of vacancy clusters in bulk silicon

    International Nuclear Information System (INIS)

    Sieck, A.

    2000-01-01

    In this thesis the growth-pattern of free silicon clusters and vacancy clusters in bulk silicon is investigated. The aim is to describe and to better understand the cluster to bulk transition. Silicon structures in between clusters and solids feature new interesting physical properties. The structure and physical properties of silicon clusters can be revealed by a combination of theory and experiment, only. Low-energy clusters are determined with different optimization techniques and a density-functional based tight-binding method. Additionally, infrared and Raman spectra, and polarizabilities calculated within self-consistent field density-functional theory are provided for the smaller clusters. For clusters with 25 to 35 atoms an analysis of the shape of the clusters and the related mobilities in a buffer gas is given. Finally, the clusters observed in low-temperature experiments are identified via the best match between calculated properties and experimental data. Silicon clusters with 10 to 15 atoms have a tricapped trigonal prism as a common subunit. Clusters with up to about 25 atoms follow a prolate growth-path. In the range from 24 to 30 atoms the geometry of the clusters undergoes a transition towards compact spherical structures. Low-energy clusters with up to 240 atoms feature a bonding pattern strikingly different from the tetrahedral bonding in the solid. It follows that structures with dimensions of several Angstroem have electrical and optical properties different from the solid. The calculated stabilities and positron-lifetimes of vacancy clusters in bulk silicon indicate the positron-lifetimes of about 435 ps detected in irradiated silicon to be related to clusters of 9 or 10 vacancies. The vacancies in these clusters form neighboring hexa-rings and, therefore, minimize the number of dangling bonds. (orig.)

  11. Effects of lithium insertion on thermal conductivity of silicon nanowires

    International Nuclear Information System (INIS)

    Xu, Wen; Zhang, Gang; Li, Baowen

    2015-01-01

    Recently, silicon nanowires (SiNWs) have been applied as high-performance Li battery anodes, since they can overcome the pulverization and mechanical fracture during lithiation. Although thermal stability is one of the most important parameters that determine safety of Li batteries, thermal conductivity of SiNWs with Li insertion remains unclear. In this letter, using molecular dynamics simulations, we study room temperature thermal conductivity of SiNWs with Li insertion. It is found that compared with the pristine SiNW, there is as much as 60% reduction in thermal conductivity with 10% concentration of inserted Li atoms, while under the same impurity concentration the reduction in thermal conductivity of the mass-disordered SiNW is only 30%. With lattice dynamics calculations and normal mode decomposition, it is revealed that the phonon lifetimes in SiNWs decrease greatly due to strong scattering of phonons by vibrational modes of Li atoms, especially for those high frequency phonons. The observed strong phonon scattering phenomenon in Li-inserted SiNWs is similar to the phonon rattling effect. Our study serves as an exploration of thermal properties of SiNWs as Li battery anodes or weakly coupled with impurity atoms

  12. Micro-cutting of silicon implanted with hydrogen and post-implantation thermal treatment

    Science.gov (United States)

    Jelenković, Emil V.; To, Suet; Sundaravel, B.; Xiao, Gaobo; Huang, Hu

    2016-07-01

    It was reported that non-amorphizing implantation by hydrogen has a potential in improving silicon machining. Post-implantation high-temperature treatment will affect implantation-induced damage, which can have impact on silicon machining. In this article, a relation of a thermal annealing of hydrogen implanted in silicon to micro-cutting experiment is investigated. Hydrogen ions were implanted into 4″ silicon wafers with 175 keV, 150 keV, 125 keV and doses of 2 × 1016 cm-2, 2 × 1016 cm-2 and 3 × 1016 cm-2, respectively. In this way, low hydrogen atom-low defect concentration was created in the region less than ~0.8 μm deep and high hydrogen atom-high defect concentration was obtained at silicon depth of ~0.8-1.5 μm. The post-implantation annealing was carried out at 300 and 400 °C in nitrogen for 1 h. Physical and electrical properties of implanted and annealed samples were characterized by secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD), Rutherford backscattering (RBS) and nanoindentation. Plunge cutting experiment was carried out in and silicon crystal direction. The critical depth of cut and cutting force were monitored and found to be influenced by the annealing. The limits of hydrogen implantation annealing contribution to the cutting characteristics of silicon are discussed in light of implantation process and redistribution of hydrogen and defects generation during annealing process.

  13. Results on positron diffusion in Si

    International Nuclear Information System (INIS)

    Nielsen, B.; Lynn, K.G.; Vehanen, A.; Schultz, P.J.

    1984-10-01

    Positron diffusion in Si(100) and Si(111) has been measured using a variable energy positron beam. The diffusion related parameter, E 0 is found to be 4.2 +- 0.2 keV, significantly longer than previously reported values. The positron diffusion coefficient is estimated at D/sub +/ = 2.3 +- 0.4 cm 2 /sec, the uncertainty arising mainly from the characteristics of the assumed positron implantation profile. A drastic reduction in E 0 is found after heating the sample to 1300 0 K, showing that previously reported low values of E 0 are associated with the thermal history of the sample. A high sensitivity to defects introduced by low energy ion bombardment is found, and the defect recovery was followed during heat treatments. Reconstruction of the Si(111) surface into the so-called 7 x 7 structure had no detectable influence on the positron diffusion behavior. No changes in the positron diffusion was observed after covering the surface with atomic hydrogen. However the yield of positronium formation at the surface was enhanced, attributed to an increased density of states at the surface

  14. Effect of pyrolysis atmospheres on the morphology of polymer-derived silicon oxynitrocarbide ceramic films coated aluminum nitride surface and the thermal conductivity of silicone rubber composites

    Science.gov (United States)

    Chiu, Hsien T.; Sukachonmakul, Tanapon; Wang, Chen H.; Wattanakul, Karnthidaporn; Kuo, Ming T.; Wang, Yu H.

    2014-02-01

    Amorphous silicon oxycarbide (SiOC) and silicon oxynitrocarbide (SiONC) ceramic films coated aluminum nitride (AlN) were prepared by using preceramic-polysilazane (PSZ) with dip-coating method, followed by pyrolysis at 700 °C in different (air, Ar, N2 and NH3) atmospheres to converted PSZ into SiOCair and SiONC(Ar,N2andNH3) ceramic. The existence of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface was characterized by FTIR, XRD and XPS. The interfacial adhesion between silicone rubber and AlN was significantly improved after the introduction of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. It can be observed from AFM that the pyrolysis of PSZ at different atmosphere strongly affected to films morphology on AlN surface as SiOCair and SiONCNH3 ceramic films were more flat and smooth than SiONCN2 and SiONCAr ceramic films. Besides, the enhancement of the thermal conductivity of silicone rubber composites was found to be related to the decrease in the surface roughness of SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. This present work provided an alternative surface modification of thermally conductive fillers to improve the thermal conductivity of silicon rubber composites by coating with amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films.

  15. Compressibility and thermal expansion of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Lindelov, H.; Gerward, Leif

    2002-01-01

    The compressibility and thermal expansion of the cubic silicon nitride (c-Si3N4) phase have been investigated by performing in situ x-ray powder-diffraction measurements using synchrotron radiation, complemented with computer simulations by means of first-principles calculations. The bulk...... compressibility of the c-Si3N4 phase originates from the average of both Si-N tetrahedral and octahedral compressibilities where the octahedral polyhedra are less compressible than the tetrahedral ones. The origin of the unit cell expansion is revealed to be due to the increase of the octahedral Si-N and N-N bond...

  16. Improved the Surface Roughness of Silicon Nanophotonic Devices by Thermal Oxidation Method

    Energy Technology Data Exchange (ETDEWEB)

    Shi Zujun; Shao Shiqian; Wang Yi, E-mail: ywangwnlo@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, No. 1037, Luoyu Street, Wuhan 430074 (China)

    2011-02-01

    The transmission loss of the silicon-on-insulator (SOI) waveguide and the coupling loss of the SOI grating are determined to a large extent by the surface roughness. In order to obtain smaller loss, thermal oxidation is a good choice to reduce the surface roughness of the SOI waveguide and grating. Before the thermal oxidation, the root mean square of the surface roughness is over 11 nm. After the thermal oxidation, the SEM figure shows that the bottom of the grating is as smooth as quartz surface, while the AFM shows that the root mean square of the surface is less than 5 nm.

  17. Synthesis and thermal conductivity of type II silicon clathrates

    Science.gov (United States)

    Beekman, M.; Nolas, G. S.

    2006-08-01

    We have synthesized and characterized polycrystalline Na 1Si 136 and Na 8Si 136, compounds possessing the type II clathrate hydrate crystal structure. Resistivity measurements from 10 to 300 K indicate very large resistivities in this temperature range, with activated temperature dependences indicative of relatively large band gap semiconductors. The thermal conductivity is very low; two orders-of-magnitude lower than that of diamond-structure silicon at room temperature. The thermal conductivity of Na 8Si 136 displays a temperature dependence that is atypical of crystalline solids and more indicative of amorphous materials. This work is part of a continuing effort to explore the many different compositions and structure types of clathrates, a class of materials that continues to be of interest for scientific and technological applications.

  18. Three Dimensional Positron Annihilation Momentum Spectroscopy of Lithium Tetraborate Crystals

    Science.gov (United States)

    2013-03-21

    Mount Design 1- I l~"! Ovuq,JQ_ fta ..c~\\ ’"’ r.ont "’ _ , \\.A•r ’fj ::..--", ~,·r ( . ’ •/?..’ ’ ~,..,_ .. {-.J.. n""’’f"’\\..+ ..... N>~ sj...Technique Applied to Measure Oxygen-Atom Defects in 6H Silicon Carbide." AFIT PhD Dissertation. AFIT/DS/ENP/10-M02, ( Mar 2010) [4] Charlton, M., and...University of Michigan Positron Research Website. http://positrons.physics.lsa.umich.edu/current/nanopos/PALS- intro/psitronphysics.htm Accessed 6 Mar

  19. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    Hasenack, C.M.

    1986-01-01

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 1200 0 C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author) [pt

  20. ANSYS program and re-validation of the thermal analysis of the Cornell silicon crystal

    International Nuclear Information System (INIS)

    Khounsary, A.; Kuzay, T.

    1992-01-01

    Thermal analysis of the Cornell three-channel silicon crystal is carried out using the ANSYS finite element program. Results are in general agreement with those previously obtained using the Transient Heat Transfer, version B (THTB) program. The main thrust of the present study has been to (a) explore the thermal analysis potentials of the ANSYS program in solving thermal hydraulic problems in the APS beamline design, (b) compare the ANSYS results with those obtained by THTB for a specific test crystal, and (c) obtain some cost benchmarks for the ANSYS program. On the basis of a limited number of test runs for the silicon crystal problem, conclusions can be drawn that (a) except for conduction problems with simple boundary conditions the utility of ANSYS for solving a variety of three-dimensional thermal hydraulic problems is at best limited, (b) in comparison with THTB program, ANSYS requires a more detailed modeling (with increasing computation time) for comparably accurate results, and (c) no firm statement regarding the cost factor can be made at this time although the ANSYS program appears to be more expensive than any other code we have used so far

  1. Simulation of a Positron Source for CEBAF

    International Nuclear Information System (INIS)

    S. Golge; A. Freyberger; C. Hyde-Wright

    2007-01-01

    A positron source for the 6 GeV (or the proposed 12 GeV upgrade) recirculating linacs at Jefferson Lab is presented. The proposed 100nA CW positron source has several unique characteristics; high incident beam power (100kW), 10 MeV incident electron beam energy, CW incident beam and CW production. Positron production with 10 MeV electrons has several advantages; the energy is below neutron threshold so the production target will not become activated during use and the absolute energy spread is bounded by the low incident energy. These advantages are offset by the large angular distribution of the outgoing positrons. Results of simulations of the positron production, capture, acceleration and injection into the recirculating linac are presented. Energy flow and thermal management of the production target present a challenge and are included in the simulations

  2. Electrically active, doped monocrystalline silicon nanoparticles produced by hot wire thermal catalytic pyrolysis

    CSIR Research Space (South Africa)

    Scriba, MR

    2011-05-01

    Full Text Available Doped silicon nanoparticles have successfully been produced by hot wire thermal catalytic pyrolysis at 40 mbar and a filament temperature of 1800 °C, using a mixture of silane and diborane or phosphine. All particles are monocrystalline with shapes...

  3. Thermal and thermo-mechanical behavior of butyl based rubber exposed to silicon oil at elevated temperature

    International Nuclear Information System (INIS)

    Ali, S.; Ramzan, S.; Raza, R.; Ahmed, F.; Hussain, R.; Ullah, S.; Ali, S.

    2013-01-01

    Silica reinforced rubbers are used as chemical resistant seals at high temperature. In this study the effect of alkali and silicon oil on the thermal and thermo-mechanical properties of the silica reinforced butyl rubber exposed as an interface between two liquid media at elevated temperature is investigated. Rubber bladder containing alkaline solution was immersed in silicon oil at 195+-5 degree C for multiple cycles and loss in its thermal, thermo-mechanical and mechanical properties were studied by TGA, DMA and Tinius Olsen Testing Machine supported by FTIR and Optical microscopy. It was observed that the thermal and thermo-mechanical properties of butyl rubber were negatively affected due to leaching out of silica filler embedded in an organic matrix at elevated temperature. The thermal stability of exposed rubber was decreased around 200 degree C and the loss of storage modulus was observed up to 99.5% at -59 degree C. (author)

  4. Stress evaluation at the ILC positron source

    Energy Technology Data Exchange (ETDEWEB)

    Ushakov, Andriy; Moortgat-Pick, Gudrid [Universitaet Hamburg, II. Institut fuer Theoretische Physik, Luruper Chaussee 149, 22761 Hamburg (Germany); Riemann, Sabine; Dietrich, Felix [Deutsches Elektronen-Synchrotron (DESY), Standort Zeuthen, Platanenallee 6, 15738 Zeuthen (Germany); Aulenbacher, Kurt; Tyukin, Valery; Heil, Philipp [Johannes Gutenberg-Universitaet Mainz, Institut fuer Kernphysik, Johann-Joachim-Becher-Weg 45, 55128 Mainz (Germany)

    2016-07-01

    High luminosity is required at future Linear Colliders which is particularly challenging for all corresponding positron sources. At the International Linear Collider (ILC), polarized positrons are obtained from electron-positron pairs by converting high-energy photons produced by passing the high-energy main electron beam through a helical undulator. The conversion target undergoes cyclic stress with high peak values. To distribute the thermal load, the target is designed as wheel spinning in vacuum with 100 m/s. However, the cyclic stress over long time at high target temperatures could exceed the fatigue stress limit. In the talk, an overview of the ILC positron source is given. The prospects to study material parameters under conditions as expected at the ILC are discussed.

  5. Study of a positron source generated by photons from ultrarelativistic channeled particles

    International Nuclear Information System (INIS)

    Chehab, R.; Couchot, F.; Nyaiesh, A.R.; Richard, F.; Artru, X.

    1989-03-01

    Radiation by channeled electrons in Germanium and Silicon crystals along the axis is studied as a very promising photon source of small angular divergence for positron generation in amorphous targets. Radiation rates for different crystal lengths - from some tenths of mm to 10 mm - and two electron incident energies, 5 and 20 GeV, are considered and a comparison between the two crystals is presented. Thermic behaviour of the crystal under incidence of bunches of 10 10 electrons is also examined. The corresponding positron yields for tungsten amorphous converters - of 0.5 and 1 X o thickness - are calculated considering the case of a Germanium photon generator. Assuming a large acceptance optical matching system as the adiabatic device of the SLC, accepted positrons are evaluated and positron yields larger than 1 e + /e - are obtained

  6. Positron annihilation in SiO 2-Si studied by a pulsed slow positron beam

    Science.gov (United States)

    Suzuki, R.; Ohdaira, T.; Uedono, A.; Kobayashi, Y.

    2002-06-01

    Positron and positronium (Ps) behavior in SiO 2-Si have been studied by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The PALS study of SiO 2-Si samples, which were prepared by a dry-oxygen thermal process, revealed that the positrons implanted in the Si substrate and diffused back to the interface do not contribute to the ortho-Ps long-lived component, and the lifetime spectrum of the interface has at least two components. From the AMOC study, the momentum distribution of the ortho-Ps pick-off annihilation in SiO 2, which shows broader momentum distribution than that of crystalline Si, was found to be almost the same as that of free positron annihilation in SiO 2. A varied interface model was proposed to interpret the results of the metal-oxide-semiconductor (MOS) experiments. The narrow momentum distribution found in the n-type MOS with a negative gate bias voltage could be attributed to Ps formation and rapid spin exchange in the SiO 2-Si interface. We have developed a two-dimensional positron lifetime technique, which measures annihilation time and pulse height of the scintillation gamma-ray detector for each event. Using this technique, the positronium behavior in a porous SiO 2 film, grown by a sputtering method, has been studied.

  7. Radiative thermal emission from silicon nanoparticles: a reversed story from quantum to classical theory

    International Nuclear Information System (INIS)

    Roura, P.; Costa, J.

    2002-01-01

    Among the rush of papers published after the discovery of visible luminescence in porous silicon, a number of them claimed that an extraordinary behaviour had been found. However, after five years of struggling with increasingly sophisticated but not completely successful models, it was finally demonstrated that it was simply thermal radiation. Here, we calculate thermal radiation emitted by silicon nanoparticles when irradiated in vacuum with a laser beam. If one interprets this radiation as being photoluminescence, its properties appear extraordinary: non-exponential excitation and decay transients and a supralinear dependence on laser power. Within the (quantum) theory of photoluminescence, this behaviour can be interpreted as arising from a non-usual excitation mechanism known as multiphoton excitation. Although this erroneous interpretation has, to some extent, a predictive power, it is unable to give a sound explanation for the quenching of radiation when particles are not irradiated in vacuum but inside a gas. The real story of this error is presented both to achieve a deeper understanding of the radiative thermal emission of nanoparticles and as a matter of reflection on scientific activity. (author)

  8. Performance Enhancement of Silicon Alloy-Based Anodes Using Thermally Treated Poly(amide imide) as a Polymer Binder for High Performance Lithium-Ion Batteries.

    Science.gov (United States)

    Yang, Hwi Soo; Kim, Sang-Hyung; Kannan, Aravindaraj G; Kim, Seon Kyung; Park, Cheolho; Kim, Dong-Won

    2016-04-05

    The development of silicon-based anodes with high capacity and good cycling stability for next-generation lithium-ion batteries is a very challenging task due to the large volume changes in the electrodes during repeated cycling, which results in capacity fading. In this work, we synthesized silicon alloy as an active anode material, which was composed of silicon nanoparticles embedded in Cu-Al-Fe matrix phases. Poly(amide imide)s, (PAI)s, with different thermal treatments were used as polymer binders in the silicon alloy-based electrodes. A systematic study demonstrated that the thermal treatment of the silicon alloy electrodes at high temperature made the electrodes mechanically strong and remarkably enhanced the cycling stability compared to electrodes without thermal treatment. The silicon alloy electrode thermally treated at 400 °C initially delivered a discharge capacity of 1084 mAh g(-1) with good capacity retention and high Coulombic efficiency. This superior cycling performance was attributed to the strong adhesion of the PAI binder resulting from enhanced secondary interactions, which maintained good electrical contacts between the active materials, electronic conductors, and current collector during cycling. These findings are supported by results from X-ray photoelectron spectroscopy, scanning electron microscopy, and a surface and interfacial cutting analysis system.

  9. High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Shekari, L., E-mail: lsg09_phy089@student.usm.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Ramizy, A.; Omar, K.; Hassan, H. Abu; Hassan, Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer A new kind of substrate (porous silicon) was used. Black-Right-Pointing-Pointer Also this research introduces an easy and safe method to grow high quality GaN NWs. Black-Right-Pointing-Pointer This is a new growth process to decrease the cost, complexity of growth of GaN NWs. Black-Right-Pointing-Pointer It is a controllable method to synthesize GaN NWs by thermal evaporation. - Abstract: Nanowires (NWs) of GaN thin films were prepared on as-grown Si (1 1 1) and porous silicon (PS) substrates using thermal evaporation method. The film growth produced high-quality wurtzite GaN NWs. The size, morphology, and nanostructures of the crystals were investigated through scanning electron microscopy, high-resolution X-ray diffraction and photoluminescence spectroscopy. The NWs grown on porous silicon were thinner, longer and denser compared with those on as-grown Si. The energy band gap of the NWs grown on PS was larger than that of NWs on as-grown Si. This is due to the greater quantum confinement effects of the crystalline structure of the NWs grown on PS.

  10. Thermal shock behaviour of mullite-bonded porous silicon carbide ceramics with yttria addition

    International Nuclear Information System (INIS)

    Ding Shuqiang; Zeng Yuping; Jiang Dongliang

    2007-01-01

    Thermal shock resistance of mullite (3Al 2 O 3 · 2SiO 2 )-bonded porous silicon carbide (SiC) ceramics with 3.0 wt% yttria (Y 2 O 3 ) addition was evaluated by a water-quenching technique. The thermal shock damage was investigated as a function of the quenching temperature, quenching cycles and specimen thickness. The residual flexural strength of the quenched specimens decreases with increasing quenching temperature and specimen thickness due to the larger thermal stress caused by thermal shock. However, quenching cycles at the temperature difference of 1200 deg. C have no effect on the residual strength since the same thermal stress was produced in repeated thermal shock processes. The good thermal shock damage resistance of the specimens is contributed mainly by the low strength and moderate elastic modulus. Moreover, the pores prevent the continuous propagation of cracks and alleviate further damage

  11. Modeling of positron states and annihilation in solids

    International Nuclear Information System (INIS)

    Puska, M.J.

    2003-01-01

    Theoretical models and computational aspects to describe positron states and to predict positron annihilation characteristics in solids are discussed. The comparison of the calculated positron lifetimes, core annihilation lineshapes, and two-dimensional angular correlation maps with experimental results are used in identifying the structure (including the chemical composition) of vacancy-type defects and their development e.g. during thermal annealing. The basis of the modeling is the two-component density-functional theory. The ensuing approximations and the state-of-the-art electronic-structure computation methods enable practical schemes with a quantitative predicting power. (author)

  12. Study of radiation defects in semiconductors by means of positron annihilation

    International Nuclear Information System (INIS)

    Krause-Rehberg, R.; Bondarenko, V.; Redmann, F.

    2003-01-01

    In a nuclear environment, a strong degradation of important properties is observed for many materials which are otherwise very reliable. This is especially valid for silicon, the most important semiconductor. In the presented paper, two examples for the study of lattice defects in silicon by means of positron annihilation will be given. Firstly, the degradation of silicon detectors used for the particle detection in high-luminosity collider experiments starts to limit the lifetime of the whole experiment. An annealing experiment on n-irradiated Si will be presented. Beside the destructive effect of high-radiation conditions, such radiation-induced defects can have a beneficial result. This will be demonstrated for the creation of new gettering zones by high-energy self-implantation of silicon. (author)

  13. Slow positron beam production by a 14 MeV C.W. electron accelerator

    Science.gov (United States)

    Begemann, M.; Gräff, G.; Herminghaus, H.; Kalinowsky, H.; Ley, R.

    1982-10-01

    A 14 MeV c.w. electron accelerator is used for pair production in a tungsten target of 0.7 radiation lengths thickness. A small fraction of the positrons is thermalized and diffuses out of the surface ofsurface of a well annealed tungsten foil coated with MgO which is positioned immediately behind the target. The slow positrons are extracted from the target region and magnetically guided over a distance of 10 m onto a channelplate multiplier at the end of an S-shaped solenoid. The positrons are identified by their annihilation radiation using two NaI-detectors. The intensity of the slow positrons is proportional to the accelerator electron beam current. The maximum intensity of 2.2 × 10 5 slow positrons per second reaching thedetector at an accelerator current of 15 μA was limited by the power deposited in the uncooled target. The energy of the positrons is concentrated in a small region at about 1 eV and clearly demonstrates the emission of thermal positrons.

  14. Slow positron beam production by a 14 MeV c.w. electron accelerator

    International Nuclear Information System (INIS)

    Begemann, M.; Graeff, G.; Herminghaus, H.; Kalinowsky, H.; Ley, R.

    1982-01-01

    A 14 MeV c.w. electron accelerator is used for pair production in a tungsten target of 0.7 radiation lengths thickness. A small fraction of the positrons is thermalized and diffuses out of the surface of a well annealed tungsten foil coated with MgO which is positioned immediately behind the target. The slow positrons are extracted from the target region and magnetically guided over a distance of 10 m onto a channelplate multiplier at the end of an S-shaped solenoid. The positrons are identified by their annihilation radiation using two Nal-detectors. The intensity of the slow positrons is proportional to the accelerator electron beam current. The maximum intensity of 2.2 x 10 5 slow positrons per second reaching the detector at an accelerator current of 15 μA was limited by the power deposited in the uncooled target. The energy of the positrons is concentrated in a small region at about 1 eV and clearly demonstrates the emission of thermal positrons. (orig.)

  15. Positron annihilation spectroscopic studies of solvothermally synthesized ZnO nanobipyramids and nanoparticles

    Science.gov (United States)

    Ghoshal, Tandra; Biswas, Subhajit; Kar, Soumitra; Chaudhuri, Subhadra; Nambissan, P. M. G.

    2008-02-01

    Zinc oxide (ZnO) samples in the form of hexagonal-based bipyramids and particles of nanometer dimensions were synthesized through solvothermal route and characterized by x-ray diffraction and transmission electron microscopy. Positron annihilation experiments were performed to study the structural defects such as vacancies and surfaces in these nanosystems. From coincidence Doppler broadening measurements, the positron trapping sites were identified as Zn vacancies or Zn-O-Zn trivacancy clusters. The positron lifetimes, their relative intensities, and the Doppler broadened lineshape parameter S all showed characteristic changes across the nanobipyramid size corresponding to the thermal diffusion length of positrons. In large nanobipyramids, vacancies within the crystallites also trapped positrons and the effects of agglomeration of such vacancies due to increased temperatures of synthesis were reflected in the variation of the annihilation parameters with their base diameters. The sizes of the nanoparticles used were all in the limit of thermal diffusion length of positrons and the annihilation characteristics were in accordance with the decreasing contribution from surfaces with increasing particle size.

  16. Comparison of silicon pin diode detector fabrication processes using ion implantation and thermal doping

    International Nuclear Information System (INIS)

    Zhou, C.Z.; Warburton, W.K.

    1996-01-01

    Two processes for the fabrication of silicon p-i-n diode radiation detectors are described and compared. Both processes are compatible with conventional integrated-circuit fabrication techniques and yield very low leakage currents. Devices made from the process using boron thermal doping have about a factor of 2 lower leakage current than those using boron ion implantation. However, the boron thermal doping process requires additional process steps to remove boron skins. (orig.)

  17. Study of the effect of neutron and electron irradiations on the low temperature thermal conductivity of germanium and silicon

    International Nuclear Information System (INIS)

    Vandevyver, M.

    1967-06-01

    The main results obtained from this work are the following: 1 Neutron irradiation (at 300 deg. K) produces lattice defects in germanium and silicon, and a corresponding very large lowering of the thermal conductivity is observed in the low temperature region (4-300 ). The results obtained have been explained with the help of the following hypotheses: for silicon a scattering of phonons by the stress fields produced by the defects; for germanium, a supplementary scattering of the electron phonon type. 2 Annealing treatments carried out on these materials above 373 deg. K restored the thermal conductivity over the whole temperature range of the measurements (4-300 deg. K); in the case of both germanium and silicon there were two steps in the annealing process. 3 A study of the thermal conductivity of germanium (initially P or N) after an electronic irradiation showed that the scattering of phonons could depend on the state of charge of the defects thus produced. (author) [fr

  18. Positron annihilation and electron spin resonance studies of defects in electron-irradiated 3C-SiC

    International Nuclear Information System (INIS)

    Itoh, Hisayoshi; Yoshikawa, Masahito; Tanigawa, Shoichiro; Nashiyama, Isamu; Misawa, Shunji; Okumura, Hajime; Yoshida, Sadafumi.

    1992-01-01

    Defects induced by 1 MeV electron-irradiation in cubic silicon carbide (3C-SiC) epitaxially grown by chemical vapor deposition have been studied with positron annihilation and electron spin resonance (ESR). Doppler broadened energy spectra of annihilation γ-rays obtained by using variable-energy positron beams showed the formation of vacancy-type defects in 3C-SiC by the electron-irradiation. An ESR spectrum labeled Tl, which has an isotropic g-value of 2.0029 ± 0.001, was observed in electron-irradiated 3C-SiC. The Tl spectrum is interpreted by hyperfine interactions of paramagnetic electrons with 13 C at four carbon sites and 29 Si at twelve silicon sites, indicating that the Tl center arises from a point defect at a silicon site. Both the results can be accounted for by the introduction of isolated Si vacancies by the irradiation. (author)

  19. Vortex structures in dense electron-positron-ion plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Haque, Q [Theoretical Plasma Physics Division, PINSTECH, P O Nilore, Islamabad (Pakistan)], E-mail: qamar_haque@hotmail.com

    2009-11-15

    A linear dispersion relation for electrostatic quantum drift and acoustic waves has been found for dense electron-positron-ion magnetoplasmas. Both the fermion and thermal temperature effects have been considered for electrons and positrons. In the nonlinear regime, a stationary solution in the form of dipolar vortices has been obtained. For illustration, the results were applied to the astrophysical plasma of the atmosphere of neutron stars/pulsars.

  20. PEBS - Positron Electron Balloon Spectrometer

    CERN Document Server

    von Doetinchem, P.; Kirn, T.; Yearwood, G.Roper; Schael, S.

    2007-01-01

    The best measurement of the cosmic ray positron flux available today was performed by the HEAT balloon experiment more than 10 years ago. Given the limitations in weight and power consumption for balloon experiments, a novel approach was needed to design a detector which could increase the existing data by more than a factor of 100. Using silicon photomultipliers for the readout of a scintillating fiber tracker and of an imaging electromagnetic calorimeter, the PEBS detector features a large geometrical acceptance of 2500 cm^2 sr for positrons, a total weight of 1500 kg and a power consumption of 600 W. The experiment is intended to measure cosmic ray particle spectra for a period of up to 20 days at an altitude of 40 km circulating the North or South Pole. A full Geant 4 simulation of the detector concept has been developed and key elements have been verified in a testbeam in October 2006 at CERN.

  1. Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

    Directory of Open Access Journals (Sweden)

    Afarin Bahrami

    2012-01-01

    Full Text Available Porous silicon (PSi layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm2 fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM. Photoacoustic spectroscopy (PAS measurements were carried out to measure the thermal diffusivity (TD of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.

  2. Hydrogen interaction with oxidized Si(111) probed with positrons

    International Nuclear Information System (INIS)

    Lynn, K.G.; Nielsen, B.; Welch, D.O.

    1989-01-01

    A variable-energy positron beam was utilized to study the interface action of hydrogen with Si(111) covered by an ultrahigh-vacuum thermally grown oxide of 2-3 nm thickness. It was observed that positrons implanted at shallow depth (< 100 nm) after diffusion are trapped either at the interface between the oxide and the Si or in the oxide. The positron-annihilation characteristics of these trapped positrons are found to be very sensitive to hydrogen exposure. The momentum distribution of the annihilating positron-electron pair, as observed in the Doppler broadening of the annihilation line, broadens considerably after exposure to hydrogen. The effect recovers after annealing at ≅ 1100 K, suggesting a hydrogen binding at the interface of ∼ 3 ± 0.3 eV. (author). 18 refs., 3 figs

  3. Improved silicon surface passivation of APCVD Al2O3 by rapid thermal annealing

    NARCIS (Netherlands)

    Black, L.E.; Allen, T.; McIntosh, K.R.; Cuévas, A.

    2016-01-01

    Short-duration post-deposition thermal treatments at temperatures above those normally used for annealing activation have the potential to further improve the already excellent passivation of crystalline silicon (c-Si) achieved by Al2O3, but have so far received little attention. In this work we

  4. Probing the defects in nano-semiconductors using positrons

    Energy Technology Data Exchange (ETDEWEB)

    Nambissan, P M G, E-mail: pmg.nambissan@saha.ac.in [Nuclear and Atomic Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India)

    2011-01-10

    Positron annihilation spectroscopy (PAS) is a very useful tool to study the defect properties of nanoscale materials. The ability of thermalized positrons to diffuse over to the surfaces of nanocrystallites prior to annihilation helps to explore the disordered atomic arrangement over there and is very useful in understanding the structure and properties of nanomaterials. As examples, the results of studies on FeS{sub 2} nanorods and ZnS nanoparticles are presented. In semiconductor nanoparticles, there are positron trapping sites within the grains also and these are characterised by using appropriate models on the measured positron lifetimes. We have observed vivid changes in the measured positron lifetimes and Doppler broadened gamma ray spectral lineshapes during structural transformations prompted by substitutional effects in Mn{sup 2+}-doped ZnS nanorods. Interestingly, the nanoparticles did not exhibit the transformation, implying the morphologies of the nanosystems playing a decisive role. Quantum confinement effect in CdS nanoparticles was another phenomenon that could be seen through positron annihilation experiments. Coincidence Doppler broadening measurements have been useful to identify the elemental environment around the vacancy clusters that trap positrons. Recent studies on nanocrystalline oxide and sulphide semiconductors are also discussed.

  5. Probing the defects in nano-semiconductors using positrons

    International Nuclear Information System (INIS)

    Nambissan, P M G

    2011-01-01

    Positron annihilation spectroscopy (PAS) is a very useful tool to study the defect properties of nanoscale materials. The ability of thermalized positrons to diffuse over to the surfaces of nanocrystallites prior to annihilation helps to explore the disordered atomic arrangement over there and is very useful in understanding the structure and properties of nanomaterials. As examples, the results of studies on FeS 2 nanorods and ZnS nanoparticles are presented. In semiconductor nanoparticles, there are positron trapping sites within the grains also and these are characterised by using appropriate models on the measured positron lifetimes. We have observed vivid changes in the measured positron lifetimes and Doppler broadened gamma ray spectral lineshapes during structural transformations prompted by substitutional effects in Mn 2+ -doped ZnS nanorods. Interestingly, the nanoparticles did not exhibit the transformation, implying the morphologies of the nanosystems playing a decisive role. Quantum confinement effect in CdS nanoparticles was another phenomenon that could be seen through positron annihilation experiments. Coincidence Doppler broadening measurements have been useful to identify the elemental environment around the vacancy clusters that trap positrons. Recent studies on nanocrystalline oxide and sulphide semiconductors are also discussed.

  6. Probing the defects in nano-semiconductors using positrons

    Science.gov (United States)

    Nambissan, P. M. G.

    2011-01-01

    Positron annihilation spectroscopy (PAS) is a very useful tool to study the defect properties of nanoscale materials. The ability of thermalized positrons to diffuse over to the surfaces of nanocrystallites prior to annihilation helps to explore the disordered atomic arrangement over there and is very useful in understanding the structure and properties of nanomaterials. As examples, the results of studies on FeS2 nanorods and ZnS nanoparticles are presented. In semiconductor nanoparticles, there are positron trapping sites within the grains also and these are characterised by using appropriate models on the measured positron lifetimes. We have observed vivid changes in the measured positron lifetimes and Doppler broadened gamma ray spectral lineshapes during structural transformations prompted by substitutional effects in Mn2+-doped ZnS nanorods. Interestingly, the nanoparticles did not exhibit the transformation, implying the morphologies of the nanosystems playing a decisive role. Quantum confinement effect in CdS nanoparticles was another phenomenon that could be seen through positron annihilation experiments. Coincidence Doppler broadening measurements have been useful to identify the elemental environment around the vacancy clusters that trap positrons. Recent studies on nanocrystalline oxide and sulphide semiconductors are also discussed.

  7. 3D numerical thermal stress analysis of the high power target for the SLC Positron Source

    International Nuclear Information System (INIS)

    Reuter, E.M.; Hodgson, J.A.

    1991-05-01

    The volumetrically nonuniform power deposition of the incident 33 GeV electron beam in the SLC Positron Source Target is hypothesized to be the most likely cause target failure. The resultant pulsed temperature distributions are known to generate complicated stress fields with no known closed-form analytical solution. 3D finite element analyses of these temperature distributions and associated thermal stress fields in the new High Power Target are described here. Operational guidelines based on the results of these analyses combined with assumptions made about the fatigue characteristics of the exotic target material are proposed. 6 refs., 4 figs

  8. Metastable self-trapping of positrons in MgO

    Science.gov (United States)

    Monge, M. A.; Pareja, R.; González, R.; Chen, Y.

    1997-01-01

    Low-temperature positron annihilation measurements have been performed on MgO single crystals containing either cation or anion vacancies. The temperature dependence of the S parameter is explained in terms of metastable self-trapped positrons which thermally hop through the crystal lattice. The experimental results are analyzed using a three-state trapping model assuming transitions from both delocalized and self-trapped states to deep trapped states at vacancies. The energy level of the self-trapped state was determined to be (62+/-5) meV above the delocalized state. The activation enthalpy for the hopping process of self-trapped positrons appears to depend on the kind of defect present in the crystals.

  9. Tuning the thermal conductivity of silicon carbide by twin boundary: a molecular dynamics study

    International Nuclear Information System (INIS)

    Liu, Qunfeng; Wang, Liang; Shen, Shengping; Luo, Hao

    2017-01-01

    Silicon carbide (SiC) is a semiconductor with excellent mechanical and physical properties. We study the thermal transport in SiC by using non-equilibrium molecular dynamics simulations. The work is focused on the effects of twin boundaries and temperature on the thermal conductivity of 3C-SiC. We find that compared to perfect SiC, twinned SiC has a markedly reduced thermal conductivity when the twin boundary spacing is less than 100 nm. The Si–Si twin boundary is more effective to phonon scattering than the C–C twin boundary. We also find that the phonon scattering effect of twin boundary decreases with increasing temperature. Our findings provide insights into the thermal management of SiC-based electronic devices and thermoelectric applications. (paper)

  10. Thermal degradation mechanism of addition-cure liquid silicone rubber with urea-containing silane

    International Nuclear Information System (INIS)

    Fang, Weizhen; Zeng, Xingrong; Lai, Xuejun; Li, Hongqiang; Chen, Wanjuan; Zhang, Yajun

    2015-01-01

    Highlights: • The urea-containing silane was incorporated into addition-cure liquid silicone rubber (ALSR) via hydrosilylation reaction. • The thermal stability of the ALSR was improved by DEUPAS both in nitrogen and air • The TG–FTIR of evolved gases during degradation was performed. • The possible degradation mechanism of the ALSR samples was proposed. - Abstract: The reactive urea-containing silane, (γ-diethylureidopropyl) allyloxyethoxysilane (DEUPAS), was synthesized by the trans-etherification reaction. The chemical structure was characterized by Fourier transform infrared spectrometry (FTIR) and 1 H nuclear magnetic resonance spectrometry ( 1 H NMR). Subsequently, DEUPAS was incorporated into addition-cure liquid silicone rubber (ALSR) via hydrosilylation reaction. The thermal stability of the ALSR samples was investigated by thermogravimetry (TG) and thermogravimetry–Fourier transform infrared spectrometry (TG–FTIR). When DEUPAS was incorporated, the temperature of 10% weight loss and 20% weight loss under air atmosphere were respectively increased by 31 °C and 60 °C compared with those of the ALSR without DEUPAS. Meanwhile, the residual weight at 800 °C increased from 33.5% to 58.7%. It was found that the striking enhancement in thermal stability of the ALSR samples was likely attributed to the decomposition of the urea groups to isocyanic acid, which reacted with hydroxyl groups to inhibit the unzipping depolymerization

  11. Thermal degradation mechanism of addition-cure liquid silicone rubber with urea-containing silane

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Weizhen; Zeng, Xingrong, E-mail: psxrzeng@gmail.com; Lai, Xuejun; Li, Hongqiang; Chen, Wanjuan; Zhang, Yajun

    2015-04-10

    Highlights: • The urea-containing silane was incorporated into addition-cure liquid silicone rubber (ALSR) via hydrosilylation reaction. • The thermal stability of the ALSR was improved by DEUPAS both in nitrogen and air • The TG–FTIR of evolved gases during degradation was performed. • The possible degradation mechanism of the ALSR samples was proposed. - Abstract: The reactive urea-containing silane, (γ-diethylureidopropyl) allyloxyethoxysilane (DEUPAS), was synthesized by the trans-etherification reaction. The chemical structure was characterized by Fourier transform infrared spectrometry (FTIR) and {sup 1}H nuclear magnetic resonance spectrometry ({sup 1}H NMR). Subsequently, DEUPAS was incorporated into addition-cure liquid silicone rubber (ALSR) via hydrosilylation reaction. The thermal stability of the ALSR samples was investigated by thermogravimetry (TG) and thermogravimetry–Fourier transform infrared spectrometry (TG–FTIR). When DEUPAS was incorporated, the temperature of 10% weight loss and 20% weight loss under air atmosphere were respectively increased by 31 °C and 60 °C compared with those of the ALSR without DEUPAS. Meanwhile, the residual weight at 800 °C increased from 33.5% to 58.7%. It was found that the striking enhancement in thermal stability of the ALSR samples was likely attributed to the decomposition of the urea groups to isocyanic acid, which reacted with hydroxyl groups to inhibit the unzipping depolymerization.

  12. Helium implanted RAFM steels studied by positron beam Doppler Broadening and Thermal Desorption Spectroscopy

    International Nuclear Information System (INIS)

    Carvalho, I; Schut, H; Fedorov, A; Luzginova, N; Desgardin, P; Sietsma, J

    2013-01-01

    Reduced Activation Ferritic/Martensitic steels are being extensively studied because of their foreseen application in fusion and Generation IV fission reactors. To mimic neutron irradiation conditions, Eurofer97 samples were implanted with helium ions at energies of 500 keV and 2 MeV and doses of 5x10 15 -10 16 He /cm 2 , creating atomic displacements in the range 0.07–0.08 dpa. The implantation induced defects were characterized by positron beam Doppler Broadening (DB) and Thermal Desorption Spectroscopy (TDS). The DB data could be fitted with one or two layers of material, depending on the He implantation energy. The S and W values obtained for the implanted regions suggest the presence of not only vacancy clusters but also positron traps of the type present in a sub-surface region found on the reference sample. The traps found in the implanted layers are expected to be He n V m clusters. For the 2 MeV, 10 16 He/cm 2 implanted sample, three temperature regions can be observed in the TDS data. Peaks below 450 K can be ascribed to He released from vacancies in the neighbourhood of the surface, the phase transition is found at 1180 K and the peak at 1350 K is likely caused by the migration of bubbles.

  13. The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via

    Directory of Open Access Journals (Sweden)

    M. H. Liao

    2013-08-01

    Full Text Available The thermo-elastic strain is induced by through silicon vias (TSV due to the difference of thermal expansion coefficients between the copper (∼18 ppm/ °C and silicon (∼2.8 ppm/ °C when the structure is exposed to a thermal ramp budget in the three dimensional integrated circuit (3DIC process. These thermal expansion stresses are high enough to introduce the delamination on the interfaces between the copper, silicon, and isolated dielectric. A compact analytic model for the strain field induced by different layouts of thermal copper filled TSVs with the linear superposition principle is found to have large errors due to the strong stress interaction between TSVs. In this work, a nonlinear stress analytic model with different TSV layouts is demonstrated by the finite element method and the analysis of the Mohr's circle. The characteristics of stress are also measured by the atomic force microscope-raman technique with nanometer level space resolution. The change of the electron mobility with the consideration of this nonlinear stress model for the strong interactions between TSVs is ∼2–6% smaller in comparison with those from the consideration of the linear stress superposition principle only.

  14. Effect of Liquid Phase Content on Thermal Conductivity of Hot-Pressed Silicon Carbide Ceramics

    International Nuclear Information System (INIS)

    Lim, Kwang-Young; Jang, Hun; Lee, Seung-Jae; Kim, Young-Wook

    2015-01-01

    Silicon carbide (SiC) is a promising material for Particle-Based Accident Tolerant (PBAT) fuel, fission, and fusion power applications due to its superior physical and thermal properties such as low specific mass, low neutron cross section, excellent radiation stability, low coefficient of thermal expansion, and high thermal conductivity. Thermal conductivity of PBAT fuel is one of very important factors for plant safety and energy efficiency of nuclear reactors. In the present work, the effect of Y 2 O 3 -Sc 2 O 3 content on the microstructure and thermal properties of the hot pressed SiC ceramics have been investigated. Suppressing the β to α phase transformation of SiC ceramics is beneficial in increasing the thermal conductivity of liquid-phase sintered SiC ceramics. Developed SiC ceramics with Y 2 O 3 -Sc 2 O 3 additives are very useful for thermal conductivity on matrix material of the PBAT fuel

  15. Aleph silicon microstrip vertex detector

    CERN Multimedia

    Laurent Guiraud

    1998-01-01

    This microstrip vertex locator was located at the heart of the ALEPH experiment, one of the four experiments at the Large Electron-Positron (LEP) collider. In the experiments at CERN's LEP, which ran from 1989 to 2000, modern silicon microvertex detectors, such as those used at ALEPH, monitored the production of short-lived particles close to the beam pipe.

  16. Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

    Science.gov (United States)

    Sabanskis, A.; Virbulis, J.

    2018-05-01

    Mathematical modelling is employed to numerically analyse the dynamics of the Czochralski (CZ) silicon single crystal growth. The model is axisymmetric, its thermal part describes heat transfer by conduction and thermal radiation, and allows to predict the time-dependent shape of the crystal-melt interface. Besides the thermal field, the point defect dynamics is modelled using the finite element method. The considered process consists of cone growth and cylindrical phases, including a short period of a reduced crystal pull rate, and a power jump to avoid large diameter changes. The influence of the thermal stresses on the point defects is also investigated.

  17. Theoretical aspects of positrons in imperfect solids

    International Nuclear Information System (INIS)

    Puska, M.J.

    1987-01-01

    The efficient use of positron annihilation in defect studies requires a deep understanding of the basic processes of positron-imperfect solid interaction. Three stages, i.e. thermalization, trapping by a defect, and the annihilation can be separated during the evolution of the interaction. The last two processes are the most relevant ones for the positron lifetime spectroscopy and they will be discussed in detail in this review. The complete solution of the problem of a localized positron interacting with the electrons around a defect requires the simultaneous self-consistent calculation of the electronic structure and the positron state. This is in principle possible in the two component density functional theory. However, the approximation, in which the electronic structure without the positron influence is used and the electron-positron correlation effects are described by local enhancement factors, has turned out to be feasible in practice and also accurate enough in predicting positron annihilation characteristics. Moreover, a non-self-consistent electron structure is sufficient in many cases. This enables an efficient calculation method in which the positron wave function can be solved in three dimensions for arbitrary defect geometries. Enhancement models for simple metals, transition metals, and semiconductors are represented. Thereafter, applications to vacancies, vacancy clusters, and vacancy-impurity complexes are shown. The positron trapping by defects is mediated by the transfer of the positron binding energy to the solid in the form of electron-hole pairs and phonons. The trapping phenomenon is discussed in the case of metals and semiconductors. Semiconductors are especially challenging because the existence of the energy gap makes the low energy electron-hole excitations impossible and because the defects have different charge states effecting strongly on the trapping rate. (author)

  18. Detection mechanisms in silicon diodes used as α-particle and thermal neutron detectors

    International Nuclear Information System (INIS)

    Cerofolini, G.F.; Ferla, G.; Foglio Para, A.

    1981-01-01

    Some common silicon devices (diodes, RAMs etc.) can be used as α and thermal neutron detectors. An α resolution of approx. equal to 3% can be obtained utilizing p + /n or n + /p diodes with no external bias. Thermal neutrons are detected by means of the reaction 10 B(n,α) 7 Li on the 10 B present in the devices. Neutron efficiency has been substantially improved by implantation of 10 B ions in the p + region of the diodes. Experimental results allow us to clarify the carrier collection mechanisms throughout the device. Some current opinions in the field are contradicted. (orig.)

  19. Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit.

    Science.gov (United States)

    Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V

    2014-05-01

    We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.

  20. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  1. Finite element modelling and experimental characterization of an electro-thermally actuated silicon-polymer micro gripper

    International Nuclear Information System (INIS)

    Krecinic, F; Duc, T Chu; Sarro, P M; Lau, G K

    2008-01-01

    This paper presents simulation and experimental characterization of an electro-thermally actuated micro gripper. This micro actuator can conceptually be seen as a bi-morph structure of SU-8 and silicon, actuated by thermal expansion of the polymer. The polymer micro gripper with an embedded comb-like silicon skeleton is designed to reduce unwanted out-of-plane bending of the actuator, while offering a large gripper stroke. The temperature and displacement field of the micro gripper structure is determined using a two-dimensional finite element analysis. This analysis is compared to experimental data from steady-state and transient measurements of the integrated heater resistance, which depends on the average temperature of the actuator. The stability of the polymer actuator is evaluated by recording the transient behaviour of the actual jaw displacements. The maximum single jaw displacement of this micro gripper design is 34 µm at a driving voltage of 4 V and an average actuator temperature of 170 °C. The transient thermal response is modelled by a first-order system with a characteristic time constant of 11.1 ms. The simulated force capability of the device is 0.57 mN per µm jaw displacement

  2. Design of an intense positron source for linear colliders

    International Nuclear Information System (INIS)

    Ida, H.; Yamada, K.; Funahashi, Y.

    1994-01-01

    The Japan Linear Collider (JLC) requires an intense positron source of 8x10 11 particles per rf-pulse. A computer simulation reveals the possibility of such an intense positron source using 'conventional' technology. In order to relax the limitation of the incident electron energy density due to thermal stress in the converter target, the incident beam radius is enlarged within the range so as not to reduce the positron capture efficiency. A pre-damping ring and beam transport system to the pre-damping ring, which have a large transverse acceptance, play important roles for a high capture efficiency. A prototype positron source has been designed and installed at downstream of 1.54 GeV S-band linac in Accelerator Test Facility (ATF) in order to carry out experiments to develop the essential technology for JLC. The simulated results will be tested in experiments with the prototype positron source. (author)

  3. Meshed doped silicon photonic crystals for manipulating near-field thermal radiation

    Science.gov (United States)

    Elzouka, Mahmoud; Ndao, Sidy

    2018-01-01

    The ability to control and manipulate heat flow is of great interest to thermal management and thermal logic and memory devices. Particularly, near-field thermal radiation presents a unique opportunity to enhance heat transfer while being able to tailor its characteristics (e.g., spectral selectivity). However, achieving nanometric gaps, necessary for near-field, has been and remains a formidable challenge. Here, we demonstrate significant enhancement of the near-field heat transfer through meshed photonic crystals with separation gaps above 0.5 μm. Using a first-principle method, we investigate the meshed photonic structures numerically via finite-difference time-domain technique (FDTD) along with the Langevin approach. Results for doped-silicon meshed structures show significant enhancement in heat transfer; 26 times over the non-meshed corrugated structures. This is especially important for thermal management and thermal rectification applications. The results also support the premise that thermal radiation at micro scale is a bulk (rather than a surface) phenomenon; the increase in heat transfer between two meshed-corrugated surfaces compared to the flat surface (8.2) wasn't proportional to the increase in the surface area due to the corrugations (9). Results were further validated through good agreements between the resonant modes predicted from the dispersion relation (calculated using a finite-element method), and transmission factors (calculated from FDTD).

  4. Effect of rapid thermal treatment on optical properties of porous silicon surface doped lithium

    Energy Technology Data Exchange (ETDEWEB)

    Haddadi, Ikbel, E-mail: haded.ikbel@yahoo.fr; Slema, Sonia Ben; Amor, Sana Ben; Bousbih, Rabaa; Bardaoui, Afrah; Dimassi, Wissem; Ezzaouia, Hatem

    2015-04-15

    In this paper, we have studied the effect of rapid thermal annealing on the optical properties of porous silicon layers doped with lithium (Li/PS). Surface modification of As-deposited Li/PS samples through thermal annealing were investigated by varying the temperature from 100 °C to 800 °C in an infrared (IR) heated belt furnace. A decrease in the reflectivity to about 6% for Li/PS annealed at 200 °C was obtained. From Photoluminescence (PL) spectra, a blue-shift of the gap was observed when the temperature is increased to 800 °C; we correlate these results to the change in chemical composition of the layers in order to find the optimized conditions for a potential application in silicon solar cells. - Highlights: • We have varied the annealing temperature of PS doped with Li. • PL intensity shows significant variation as function of temperature. • We observe reduce of Si–O–Li bands with increasing temperature. • Concurrent with the loss of Li we observe a decrease of the PL.

  5. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

    OpenAIRE

    Lee, Youngseok; Oh, Woongkyo; Dao, Vinh Ai; Hussain, Shahzada Qamar; Yi, Junsin

    2012-01-01

    It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT) solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO) process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0) which improves the efficie...

  6. Positron annihilation and Wheeler complexes in semiconductors

    International Nuclear Information System (INIS)

    Prokop'ev, E.P.

    1995-01-01

    Properties of Ps-Ex (positron-exciton) complex nature Wheeler complexes that may be formed at irradiation of semiconductors and ion crystals by positrons at low temperature under conditions of optical excitation by excitons are studied. Binding energy of similar and more complex systems regarding decomposition in Ps and Ex and/or Ex ± exceeds, at least, 0.1 eV, while lifetime regarding biquantum-self-annihilation constitutes τ 2γ ∼5.02x10 - 10 κ c 3 c (κ c -phenomenological parameter of the effective mass method). The lifetime estimations enabled to conclude that Ps-Ex complexes may be detected in some oxide semiconductors, in zinc sulfide, as well as, in alkaline-haloid crystals. At the same time, in silicon, gallium arsenide and in other semiconductors of A 3 B 5 and A 2 B 6 it is highly improbable to observe these complexes. 27 refs

  7. Effect of van der Waals forces on thermal conductance at the interface of a single-wall carbon nanotube array and silicon

    Directory of Open Access Journals (Sweden)

    Ya Feng

    2014-12-01

    Full Text Available Molecular dynamics simulations are performed to evaluate the effect of van der Waals forces among single-wall carbon nanotubes (SWNTs on the interfacial thermal conductance between a SWNT array and silicon substrate. First, samples of SWNTs vertically aligned on silicon substrate are simulated, where both the number and arrangement of SWNTs are varied. Results reveal that the interfacial thermal conductance of a SWNT array/Si with van der Waals forces present is higher than when they are absent. To better understand how van der Waals forces affect heat transfer through the interface between SWNTs and silicon, further constructs of one SWNT surrounded by different numbers of other ones are studied, and the results show that the interfacial thermal conductance of the central SWNT increases with increasing van der Waals forces. Through analysis of the covalent bonds and vibrational density of states at the interface, we find that heat transfer across the interface is enhanced with a greater number of chemical bonds and that improved vibrational coupling of the two sides of the interface results in higher interfacial thermal conductance. Van der Waals forces stimulate heat transfer at the interface.

  8. The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2012-01-01

    Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

  9. Time-Based Readout of a Silicon Photomultiplier (SiPM) for Time of Flight Positron Emission Tomography (TOF-PET)

    CERN Document Server

    Powolny, F; Brunner, S E; Hillemanns, H; Meyer, T; Garutti, E; Williams, M C S; Auffray, E; Shen, W; Goettlich, M; Jarron, P; Schultz-Coulon, H C

    2011-01-01

    Time of flight (TOF) measurements in positron emission tomography (PET) are very challenging in terms of timing performance, and should ideally achieve less than 100 ps FWHM precision. We present a time-based differential technique to read out silicon photomultipliers (SiPMs) which has less than 20 ps FWHM electronic jitter. The novel readout is a fast front end circuit (NINO) based on a first stage differential current mode amplifier with 20 Omega input resistance. Therefore the amplifier inputs are connected differentially to the SiPM's anode and cathode ports. The leading edge of the output signal provides the time information, while the trailing edge provides the energy information. Based on a Monte Carlo photon-generation model, HSPICE simulations were run with a 3 x 3 mm(2) SiPM-model, read out with a differential current amplifier. The results of these simulations are presented here and compared with experimental data obtained with a 3 x 3 x 15 mm(3) LSO crystal coupled to a SiPM. The measured time coi...

  10. Application of positron annihilation spectroscopy for investigation of reactor steels

    International Nuclear Information System (INIS)

    Sojak, S.; Slugen, V.; Petriska, M.; Stacho, M.; Veternikova, J.; Sabelova, V.; Egger, W.; Ravelli, L.

    2013-01-01

    Our work is focused on the study of radiation damage simulated by ion implantations and thermal treatment evaluation of RAFM steels in the form of binary Fe-Cr model alloys. In order to study the microstructure recovery after ion irradiation, we applied an approach for restoration of initial physical and mechanical characteristics of structural materials in the form of thermal annealing, with the goal to decrease the size and amount of accumulated defects. The experimental analysis of material damage at microstructural level was performed by the pulsed low energy positron system (PLEPS) [1] at the high intensity positron source NEPOMUC at the Munich research reactor FRM-II. (authors)

  11. Nuclear emulsions for the detection of micrometric-scale fringe patterns: an application to positron interferometry

    Science.gov (United States)

    Aghion, S.; Ariga, A.; Bollani, M.; Ereditato, A.; Ferragut, R.; Giammarchi, M.; Lodari, M.; Pistillo, C.; Sala, S.; Scampoli, P.; Vladymyrov, M.

    2018-05-01

    Nuclear emulsions are capable of very high position resolution in the detection of ionizing particles. This feature can be exploited to directly resolve the micrometric-scale fringe pattern produced by a matter-wave interferometer for low energy positrons (in the 10–20 keV range). We have tested the performance of emulsion films in this specific scenario. Exploiting silicon nitride diffraction gratings as absorption masks, we produced periodic patterns with features comparable to the expected interferometer signal. Test samples with periodicities of 6, 7 and 20 μ m were exposed to the positron beam, and the patterns clearly reconstructed. Our results support the feasibility of matter-wave interferometry experiments with positrons.

  12. Thermally responsive silicon nanowire arrays for native/denatured-protein separation

    International Nuclear Information System (INIS)

    Wang Hongwei; Wang Yanwei; Yuan Lin; Wang Lei; Yang Weikang; Wu Zhaoqiang; Li Dan; Chen Hong

    2013-01-01

    We present our findings of the selective adsorption of native and denatured proteins onto thermally responsive, native-protein resistant poly(N-isopropylacrylamide) (PNIPAAm) decorated silicon nanowire arrays (SiNWAs). The PNIPAAm–SiNWAs surface, which shows very low levels of native-protein adsorption, favors the adsorption of denatured proteins. The amount of denatured-protein adsorption is higher at temperatures above the lower critical solution temperature (LCST) of PNIPAAm. Temperature cycling surrounding the LCST, which ensures against thermal denaturation of native proteins, further increases the amount of denatured-protein adsorption. Moreover, the PNIPAAm–SiNWAs surface is able to selectively adsorb denatured protein even from mixtures of different protein species; meanwhile, the amount of native proteins in solution is kept nearly at its original level. It is believed that these results will not only enrich current understanding of protein interactions with PNIPAAm-modified SiNWAs surfaces, but may also stimulate applications of PNIPAAm–SiNWAs surfaces for native/denatured protein separation. (paper)

  13. Simultaneous measurements of thermal conductivity and electrical conductivity of micro-machined Silicon films

    International Nuclear Information System (INIS)

    Hagino, H; Kawahara, Y; Goto, A; Miyazaki, K

    2012-01-01

    The in-plane effective thermal conductivity of free-standing Si thin films with periodic micropores was measured at -100 to 0 °C. The Si thin films with micropores were prepared from silicon-on-insulator (SOI) wafers by standard microfabrication processes. The dimensions of the free-standing Si thin films were 200μm×150μm×2 μm, with staggered 4 μm pores having an average pitch of 4 mm. The Si thin film serves both as a heater and thermometer. The average temperature rise of the thin film is a function of its in-plane thermal conductivity. The effective thermal conductivity was calculated using a simple one-dimensional heat conduction model. The measured thermal conductivity was much lower than that expected based on classical model evaluations. A significant phonon size effect was observed even in the microsized structures, and the mean free path for phonons is very long even at the room temperature.

  14. Thermal grafting of fluorinated molecular monolayers on doped amorphous silicon surfaces

    International Nuclear Information System (INIS)

    Sabbah, H.; Zebda, A.; Ababou-Girard, S.; Solal, F.; Godet, C.; Conde, J. P.; Chu, V.

    2009-01-01

    Thermally induced (160-300 deg. C) gas phase grafting of linear alkene molecules (perfluorodecene) was performed on hydrogenated amorphous silicon (a-Si:H) films, either nominally undoped or doped with different boron and phosphorus concentrations. Dense and smooth a-Si:H films were grown using plasma decomposition of silane. Quantitative analysis of in situ x-ray photoelectron spectroscopy indicates the grafting of a single layer of organic molecules. The hydrophobic properties of perfluorodecene-modified surfaces were studied as a function of surface coverage. Annealing experiments in ultrahigh vacuum show the covalent binding and the thermal stability of these immobilized layers up to 370 deg. C; this temperature corresponds to the Si-C bond cleavage temperature. In contrast with hydrogenated crystalline Si(111):H, no heavy wet chemistry surface preparation is required for thermal grafting of alkene molecules on a-Si:H films. A threshold grafting temperature is observed, with a strong dependence on the doping level which produces a large contrast in the molecular coverage for grafting performed at 230 deg. C

  15. Harmonic and Anharmonic Properties of Diamond Structure Crystals with Application to the Calculation of the Thermal Expansion of Silicon. Ph.D. Thesis. Final Report

    Science.gov (United States)

    Wanser, K. H.

    1981-01-01

    Silicon has interesting harmonic and anharmonic properties such as the low lying transverse acoustic modes at the X and L points of the Brillouin zone, negative Gruneisen parameters, negative thermal expansion and anomalous acoustic attenuation. In an attempt to understand these properties, a lattice dynamical model employing long range, nonlocal, dipole-dipole interactions was developed. Analytic expression for the Gruneisen parameters of several modes are presented. These expressions explain how the negative Gruneisen parameters arise. This model is applied to the calculation of the thermal expansion of silicon from 5K to 1700K. The thermoelastic contribution to the acoustic attenuation of silicon is computed from 1 to 300 K. Strong attenuation anomalies associated with negative thermal expansion are found in the vicinity of 17K and 125K.

  16. Defects investigation in neutron irradiated reactor steels by positron annihilation

    International Nuclear Information System (INIS)

    Slugen, V.

    2003-01-01

    Positron annihilation spectroscopy (PAS) based on positron lifetime measurements using the Pulsed Low Energy Positron System (PLEPS) was applied to the investigation of defects of irradiated and thermally treated reactor pressure vessel (RPV) steels. PLEPS results showed that the changes in microstructure of the RPV-steel properties caused by neutron irradiation and post-irradiation heat treatment can be well detected. From the lifetime measurements in the near-surface region (20-550 nm) the defect density in Russian types of RPV-steels was calculated using the diffusion trapping model. The post-irradiation heat treatment studies performed on non-irradiated specimens are also presented. (author)

  17. Enhancing spatial resolution of 18F positron imaging with the Timepix detector by classification of primary fired pixels using support vector machine

    International Nuclear Information System (INIS)

    Wang, Qian; Liu, Zhen; Ziegler, Sibylle I; Shi, Kuangyu

    2015-01-01

    Position-sensitive positron cameras using silicon pixel detectors have been applied for some preclinical and intraoperative clinical applications. However, the spatial resolution of a positron camera is limited by positron multiple scattering in the detector. An incident positron may fire a number of successive pixels on the imaging plane. It is still impossible to capture the primary fired pixel along a particle trajectory by hardware or to perceive the pixel firing sequence by direct observation. Here, we propose a novel data-driven method to improve the spatial resolution by classifying the primary pixels within the detector using support vector machine. A classification model is constructed by learning the features of positron trajectories based on Monte-Carlo simulations using Geant4. Topological and energy features of pixels fired by 18 F positrons were considered for the training and classification. After applying the classification model on measurements, the primary fired pixels of the positron tracks in the silicon detector were estimated. The method was tested and assessed for [ 18 F]FDG imaging of an absorbing edge protocol and a leaf sample. The proposed method improved the spatial resolution from 154.6   ±   4.2 µm (energy weighted centroid approximation) to 132.3   ±   3.5 µm in the absorbing edge measurements. For the positron imaging of a leaf sample, the proposed method achieved lower root mean square error relative to phosphor plate imaging, and higher similarity with the reference optical image. The improvements of the preliminary results support further investigation of the proposed algorithm for the enhancement of positron imaging in clinical and preclinical applications. (paper)

  18. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

  19. Positron annihilation study on ZnO-based scintillating glasses

    Science.gov (United States)

    Nie, Jiaxiang; Yu, Runsheng; Wang, Baoyi; Ou, Yuwen; Zhong, Yurong; Xia, Fang; Chen, Guorong

    2009-04-01

    Positron lifetime of ZnO-based scintillating glasses (55 - x)SiO 2-45ZnO- xBaF 2 ( x = 5, 10, 15 mol%) were measured with a conventional fast-fast spectrometer. Three positron lifetime components τ1, τ 2, and τ3 are ˜0.23 ns, ˜0.45 ns, and ˜1.6 ns, respectively. All the three positron lifetime components first increase with increasing BaF 2 concentration from 5 mol% to 10 mol%, then decreases as BaF 2 further increases to 15 mol%. The result suggests that the glass sample with 10 mol% BaF 2 contains the highest defect density, and is in excellent agreement with glass chemistry, glass density, thermal properties, and calculated crystallinity. Therefore, positron annihilation lifetime measurement is an effective tool for analyzing defects in ZnO-based scintillating glasses.

  20. Thermally stimulated current method applied to highly irradiated silicon diodes

    CERN Document Server

    Pintilie, I; Pintilie, I; Moll, Michael; Fretwurst, E; Lindström, G

    2002-01-01

    We propose an improved method for the analysis of Thermally Stimulated Currents (TSC) measured on highly irradiated silicon diodes. The proposed TSC formula for the evaluation of a set of TSC spectra obtained with different reverse biases leads not only to the concentration of electron and hole traps visible in the spectra but also gives an estimation for the concentration of defects which not give rise to a peak in the 30-220 K TSC temperature range (very shallow or very deep levels). The method is applied to a diode irradiated with a neutron fluence of phi sub n =1.82x10 sup 1 sup 3 n/cm sup 2.

  1. Positron-electron autocorrelation function study of E-center in phosphorus-doped silicon

    International Nuclear Information System (INIS)

    Ho, K.F.; Beling, C.D.; Fung, S.; Biasini, M.; Ferro, G.; Gong, M.

    2004-01-01

    Two dimensional fourier transformed angular correlation of annihilation radiation (2D-FT-ACAR) spectra have been taken for 10 19 cm -3 phosphorus-doped Si in the as grown state and after being subjected to 1.8 MeV e - fluences of 2 x 10 18 cm -2 . In the spectra of the irradiated samples, the zero-crossing points are observed to displace outwards from the bravais lattice positions. It is suggested that this results from positrons annihilating with electrons in localized orbitals at the defect site. An attempt is made to extract just the component of the defect's positron-electron autocorrelation function that relates to the localized defect orbitals. It is argued that such an extracted real-space function may provide a suitable means for obtaining a mapping of localized defect orbitals. (orig.)

  2. Slow positrons in single-crystal samples of Al and Al-AlxOy

    Science.gov (United States)

    Lynn, K. G.; Lutz, H.

    1980-11-01

    Well-characterized Al(111) and Al(100) samples were studied with monoenergetic positrons before and after exposure to oxygen. Both positronium-formation and positron-emission curves were obtained for various incident positron energies at sample temperatures ranging from 160-900 K. The orthopositronium decay signal provides a unique signature that the positron has emerged from the surface region of a clean metal. In the clean Al crystals part of the positronium formed near the surface is found to be associated with a temperature-activated process described as the thermally activated detrapping of a positron from a surface state. A simple positron diffusion model, including surface and vacancy trapping, is fitted to the positronium data and an estimate of the binding energy of the positron in this trap is made. The positron diffusion constant is found to have a negative temperature dependence before the onset of positron trapping at thermally generated monovacancies (>500 K), in reasonable agreement with theoretical predictions. The depth of the positron surface state is reduced or positronium is formed in the chemisorbed layer as oxygen is adsorbed on both Al sample surfaces, thus increasing the positronium fraction and decreasing the positron emission. At higher oxygen exposures [>500 L (1 L = 10-6 torr sec)] positron or positronium traps are generated in the overlayer and the positronium fraction is reduced. The amorphous-to-crystalline surface transition of AlxOy on Al is observed between 650 and 800 K by the change in the positronium fraction and is interpreted as the removal of trapping centers in the metal-oxide overlayer. At the higher temperatures and incident energies vacancy trapping is observed by the decrease in the positron diffusion length in both the clean and the underlying Al of the oxygen-exposed samples. Similar vacancy formation enthalpies for Al are extracted in both the clean and oxygen-covered samples by a simple model and are in good

  3. Positron annihilation and Wheeler complexes in semiconductors

    International Nuclear Information System (INIS)

    Prokob'ev, E.P.

    1995-01-01

    The Wheeler complexes Ps-Ex (positronium-exciton) were studied. These complexes are formed during irradiation of semiconductors and ionic crystals with positrons at low temperatures under optical excitation by excitons. The binding energy of these and more complex entities preventing dissociation into Ps and Ex and/or Ex ± is at least 0.1 eV, and the lifetime for the two-photon self-annihilation is τ 2γ ∼ 5.02 x 10 -10 x c 3 s (x c is the phenomenological parameter of the effective-mass method). The estimation of lifetimes τ 2γ and τ 2γ t (the total lifetime of Ps-Ex complexes with account for positron annihilation on valence electrons) led to the conclusion that Ps-Ex complexes can be observed in a number of oxide semiconductors, in zinc sulfide, and in alkali halide crystals; however, it was difficult to observe such complexes in silicon, gallium arsenide, and other A 3 B 5 and A 2 B 6 semiconductors

  4. Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

    International Nuclear Information System (INIS)

    Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

    2015-01-01

    Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

  5. Equivalence of the equilibrium and the nonequilibrium molecular dynamics methods for thermal conductivity calculations: From bulk to nanowire silicon

    Science.gov (United States)

    Dong, Haikuan; Fan, Zheyong; Shi, Libin; Harju, Ari; Ala-Nissila, Tapio

    2018-03-01

    Molecular dynamics (MD) simulations play an important role in studying heat transport in complex materials. The lattice thermal conductivity can be computed either using the Green-Kubo formula in equilibrium MD (EMD) simulations or using Fourier's law in nonequilibrium MD (NEMD) simulations. These two methods have not been systematically compared for materials with different dimensions and inconsistencies between them have been occasionally reported in the literature. Here we give an in-depth comparison of them in terms of heat transport in three allotropes of Si: three-dimensional bulk silicon, two-dimensional silicene, and quasi-one-dimensional silicon nanowire. By multiplying the correlation time in the Green-Kubo formula with an appropriate effective group velocity, we can express the running thermal conductivity in the EMD method as a function of an effective length and directly compare it to the length-dependent thermal conductivity in the NEMD method. We find that the two methods quantitatively agree with each other for all the systems studied, firmly establishing their equivalence in computing thermal conductivity.

  6. Development of a Slow Positron Facility at Hebrew University of Jerusalem

    Science.gov (United States)

    Kelleher, Aidan

    2013-03-01

    Positron annihilation spectroscopy provides both depth of penetration to study bulk defects in materials as well as nano-scale resolution. This measurement range is achieved by slowing positrons from a radioactive source, typically 22Na, by sending them through a moderator, typically W or solid Ne. The nearly thermal positrons are then accelerated to the desired energy by means of an electrostatic potential. The SPOT project at The Hebrew University of Jerusalem proposes to increase the luminosity of the beam by applying the best practices currently in us, as well as using a short-lived source of positrons, 18F. Simulations based on our current designs indicate this project will be able to deliver positrons in the energy range of 50-50000eV with an energy resolution of 1eV is possible. We will present the unique technical challenges of using this source of positrons, how we plan to overcome them, the results of simulations, and facility construction progress.

  7. Influence of germanium on thermal dewetting and agglomeration of the silicon template layer in thin silicon-on-insulator

    International Nuclear Information System (INIS)

    Zhang, P P; Yang, B; Rugheimer, P P; Roberts, M M; Savage, D E; Lagally, M G; Liu Feng

    2009-01-01

    We investigate the influence of heteroepitaxially grown Ge on the thermal dewetting and agglomeration of the Si(0 0 1) template layer in ultrathin silicon-on-insulator (SOI). We show that increasing Ge coverage gradually destroys the long-range ordering of 3D nanocrystals along the (1 3 0) directions and the 3D nanocrystal shape anisotropy that are observed in the dewetting and agglomeration of pure SOI(0 0 1). The results are qualitatively explained by Ge-induced bond weakening and decreased surface energy anisotropy. Ge lowers the dewetting and agglomeration temperature to as low as 700 0 C.

  8. Positron-molecule interactions and corresponding positron attachment to molecules. As a basis for positron emission tomography (PET)

    International Nuclear Information System (INIS)

    Tachikawa, Masanori; Kimura, Mineo; Pichl, Lukas

    2007-01-01

    Through positron and electron interactions, they annihilate emitting primarily two gamma rays with 180-degree opposite directions. Positron spectroscopy using the characteristics of these gamma rays has been employed for analyzing various properties of material as well as for positron emission tomography (PET). However, its fundamental physics of positron-electron interactions and resulting features of emitting gamma rays are not well understood. By obtaining better understanding of positron interactions, it should become possible to provide the firm bases for positron spectroscopy in finer accuracy and quality. Here, we propose a significant mechanism for positron annihilation through positron attachment process, which may help increase the quality of positron spectroscopy. (author)

  9. Positron annihilation lifetime study of oxide dispersion strengthened steels

    International Nuclear Information System (INIS)

    Krsjak, V.; Szaraz, Z.; Hähner, P.

    2012-01-01

    A comparative positron annihilation lifetime study has been performed on various commercial ferritic and ferritic/martensitic oxide dispersion strengthened (ODS) steels. Both as-extruded and recrystallized materials were investigated. In the materials with recrystallized coarse-grained microstructures, only the positron trapping at small vacancy clusters and yttria nanofeatures was observed. Materials which had not undergone recrystallization treatment clearly showed additional positron trapping which is associated with dislocations. Dislocation densities were calculated from a two-component decomposition of the positron lifetime spectra by assuming the first component to be a superposition of the bulk controlled annihilation rate and the dislocation controlled trapping rate. The second component (which translates into lifetimes of 240–260 ps) was found to be well separated in all those ODS materials. This paper presents the potentialities and limitations of the positron annihilation lifetime spectroscopy, and discusses the results of the experimental determination of the defect concentrations and sensitivity of this technique to the material degradation due to thermally induced precipitation of chromium-rich α′ phases.

  10. Positron annihilation study on ZnO-based scintillating glasses

    Energy Technology Data Exchange (ETDEWEB)

    Nie Jiaxiang [Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 20023 (China); Yu Runsheng; Wang Baoyi [Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039 (China); Ou Yuwen [Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 20023 (China); Zhong Yurong [Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039 (China); Xia Fang [School of Chemical Engineering, University of Adelaide, Adelaide, SA 5005 (Australia); Chen Guorong, E-mail: grchen@ecust.edu.cn [Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 20023 (China)

    2009-04-15

    Positron lifetime of ZnO-based scintillating glasses (55 - x)SiO{sub 2}-45ZnO-xBaF{sub 2} (x = 5, 10, 15 mol%) were measured with a conventional fast-fast spectrometer. Three positron lifetime components {tau}{sub 1}, {tau}{sub 2}, and {tau}{sub 3} are {approx}0.23 ns, {approx}0.45 ns, and {approx}1.6 ns, respectively. All the three positron lifetime components first increase with increasing BaF{sub 2} concentration from 5 mol% to 10 mol%, then decreases as BaF{sub 2} further increases to 15 mol%. The result suggests that the glass sample with 10 mol% BaF{sub 2} contains the highest defect density, and is in excellent agreement with glass chemistry, glass density, thermal properties, and calculated crystallinity. Therefore, positron annihilation lifetime measurement is an effective tool for analyzing defects in ZnO-based scintillating glasses.

  11. The effects of thermal annealing in structural and optical properties of RF sputtered amorphous silicon

    International Nuclear Information System (INIS)

    Abdul Fatah Awang Mat

    1988-01-01

    The effect of thermal annealing on structural and optical properties of amorphous silicon are studied on samples prepared by radio-frequency sputtering. The fundamental absorption edge of these films are investigated at room temperature and their respective parameters estimated. Annealing effect on optical properties is interpreted in terms of the removal of voids and a decrease of disorder. (author)

  12. Preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyeon-Hye [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Han, Woong [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Lee, Hae-seong [Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Min, Byung-Gak [Department of Polymer Science & Engineering, Korea National University of Transportation, Chungju 380-702 (Korea, Republic of); Kim, Byung-Joo, E-mail: ap2-kbj@hanmail.net [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of)

    2015-10-15

    Graphical abstract: We report preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites. Thermally composites showed enhanced thermal conductivity increasing from up to 59% by the thermal network. - Highlights: • A new method of Si−N coating on carbon fibers was reported. • Silane layer were successfully converted to Si−N layer on carbon fiber surface. • Si−N formation was confirmed by FT-IR, XPS, and EDX. • Thermal conductivity of Si−N coated CF composites were enhanced to 0.59 W/mK. - Abstract: This study investigates the effect of silicon nitride (Si−N)-coated carbon fibers on the thermal conductivity of carbon-fiber-reinforced epoxy composite. The surface properties of the Si−N-coated carbon fibers (SiNCFs) were observe using Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy, and the thermal stability was analyzed using thermogravimetric analysis. SiNCFs were fabricated through the wet thermal treatment of carbon fibers (Step 1: silane finishing of the carbon fibers; Step 2: high-temperature thermal treatment in a N{sub 2}/NH{sub 3} environment). As a result, the Si−N belt was exhibited by SEM. The average thickness of the belt were 450–500 nm. The composition of Si−N was the mixture of Si−N, Si−O, and C−Si−N as confirmed by XPS. Thermal residue of the SiNCFs in air was enhanced from 3% to 50%. Thermal conductivity of the composites increased from 0.35 to 0.59 W/mK after Si−N coating on carbon surfaces.

  13. A time-pulsed positronium beam and a study of oxides on silicon using positrons

    International Nuclear Information System (INIS)

    Khatri, R.K.

    1993-01-01

    The studies on rare gas solid moderators were carried out with a 350 μCi 22 Na radioactive source. The corrected efficiency for neon moderator in conical geometrical configuration was as high as (1.4 ± 0.2)%. The conical configuration moderator performed better by a factor of (2.2 ± 0.2) than the cylindrical configuration. A time pulsed positron beam was built to carry out investigations on the positronium formation processes and positronium beam. This beam has the capability to store low energy e + in a magnetic bottle, with a magnetic bottle at one end and an electrostatic mirror at the other. These stored e + are then bunched to form a pulse with a buncher. The bunched beam had a FWHM of 17 nsec and contained 1 to 2 e + /pulse. A thin carbon foil of 50 angstrom thickness was used for positronium formation by process of charge exchange. Positronium Annihilation Spectroscopy (PAS) was utilized to carry out studies on the activation energy of hydrogen at the interface of oxide and silicon substrate and the effect of irradiation on the oxides in SiO 2 /Si(100) sample. The activation energy of hydrogen at the interface of SiO 2 /Si(100) samples with n- and p-type substrate was measured to be 2.60(6) eV and 2.47(6) eV respectively. The investigations of the samples irradiated with x-ray and γ-ray led to the first time identification of creation of E' centers with PAS

  14. Preparation, Characterization, Thermal, and Flame-Retardant Properties of Green Silicon-Containing Epoxy/Functionalized Graphene Nanosheets Composites

    Directory of Open Access Journals (Sweden)

    Ming-Yuan Shen

    2013-01-01

    Full Text Available In this investigation, silane was grafted onto the surface of graphene nanosheets (GNSs through free radical reactions, to form Si-O-Et functional groups that can undergo the sol-gel reaction. To improve the compatibility between the polymer matrix and the fillers, epoxy monomer was modified using a silane coupling agent; then, the functionalized GNSs were added to the modified epoxy to improve the thermal stability and strengthen the flame-retardant character of the composites. High-resolution X-ray photoelectron spectrometry reveals that when the double bonds in VTES are grafted to the surfaces of GNSs. Solid-state 29Si nuclear magnetic resonance presents that the distribution of the signal associated with the T3 structure is wide and significant, indicating that the functionalization reaction of the silicone in the modified epoxy and VTES-GNSs increases the network-like character of the structures. Thermal gravimetric analysis, the integral procedure decomposition temperature, and limiting oxygen index demonstrate that the GNSs composites that contained silicon had a higher thermal stability and stronger flame-retardant character than pure epoxy. The dynamic storage modulus of all of the m-GNSs containing composites was significantly higher than that of the control epoxy, and the modulus of the composites increased with the concentration of m-GNSs.

  15. Thermal and thermomechanical effects on the Al-Ca-Zn superplastic alloy studied on the positrons annihilation

    International Nuclear Information System (INIS)

    Romero, R.; Somoza, A.; Silvetti, S.P.

    1990-01-01

    Superplastic metallic materials are characterized by the presence of an unusual plastic behaviour, within a certain temperature range, with high ductility and low flow stress. This makes them suitable for their shaping with compressed air, for instance. On the other hand they behave similarly to any other metallic alloy at room temperature. One of the main problems found in superplastic alloys during deformation is the formation of cavities that may deteriorate the properties of a piece which was manufactured with this method. As an attempt to understand the origin of the cavitation, the effect of thermal and thermo-mechanical treatments was studied on superplastic alloy Al-5%wtCa-5%wtZn using a measurement technique based on positron annihilation. (Author). 3 refs., 5 figs

  16. Multi-GeV electron and positron channeling in bent silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Sushko, Gennady B., E-mail: sushko@fias.uni-frankfurt.de [Goethe-Universitat Frankfurt am Main, Max-von-Laue-Str. 1, 60438 Frankfurt am Main (Germany); MBN Research Center, Altenhöferallee 3, 60438 Frankfurt am Main (Germany); Korol, Andrei V. [MBN Research Center, Altenhöferallee 3, 60438 Frankfurt am Main (Germany); St. Petersburg State Maritime University, Leninsky Ave. 101, 198262 St. Petersburg (Russian Federation); Solov’yov, Andrey V. [MBN Research Center, Altenhöferallee 3, 60438 Frankfurt am Main (Germany); A.F. Ioffe Physical-Technical Institute, Politekhnicheskaya ul. 26, 194021 St. Petersburg (Russian Federation)

    2015-07-15

    The planar channeling of 3…20 GeV electrons and positrons in bent Si(1 1 1) crystal was simulated by means of the MBN EXPLORER software package. The results of the simulations are analyzed in terms of dechanneling length characterization, angular distribution of outgoing projectiles and radiation spectrum. The results of calculations are compared with the recent experimental data.

  17. Effect of thermal annealing on the optical and structural properties of silicon implanted with a high hydrogen fluence

    International Nuclear Information System (INIS)

    Kling, A.; Soares, J.C.; Rodriguez, A.; Rodriguez, T.; Avella, M.; Jimenez, J.

    2006-01-01

    Silicon capped by thermal oxide has been implanted with 1 x 10 17 H/cm 2 and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality and light emission. The results show that the luminescent properties are independent of the hydrogen content but are strongly related with the present damage

  18. Positron-containing systems and positron diagnostics

    International Nuclear Information System (INIS)

    1978-01-01

    The results of the experimental and theoretical investigations are presented. Considered are quantum-mechanical calculations of wave functions describing the states of positron-containing atomic systems and of cross-sections of the processes characterizing different interactions, and also the calculations of the behaviour of positrons in gases in the presence of an electric field. The results of experimental tests are presented by the data describing the behaviour of positrons and positronium in liquids, polymers and elastomers, complex oxides and in different solids. New equipment and systems developed on the basis of current studies are described. Examined is a possibility of applying the methods of model and effective potentials for studying the bound states of positron systems and for calculating cross-sections of elementary processes of elastic and inelastic collisions with a positron involved. The experimental works described indicate new possibilities of the positron diagnosis method: investigation of thin layers and films of semiconductor materials, defining the nature of chemical bonds in semiconductors, determination of the dislocation density in deformed semiconductors, derivation of important quantitative information of the energy states of radiation defects in them

  19. Thermal performances of ETFE cushion roof integrated amorphous silicon photovoltaic

    International Nuclear Information System (INIS)

    Hu, Jianhui; Chen, Wujun; Qiu, Zhenyu; Zhao, Bing; Zhou, Jinyu; Qu, Yegao

    2015-01-01

    Highlights: • Thermal performances of a three layer ETFE cushion integrated a-Si PV is evaluated. • Temperature of a-Si PV obviously affects temperature field and temperature boundary. • The maximum temperature difference of 3.4 K between measured and numerical results. • Main transport mechanisms in upper and lower chambers are convection and conduction. • Heat transfer coefficients of this roof are less than those of other ETFE cushion roofs. - Abstract: Thermal performances of the ETFE cushion roof integrated amorphous silicon photovoltaic (a-Si PV) are essential to estimate building performances, such as temperature distribution and heat transfer coefficient. To investigate these thermal performances, an experimental mock-up composed of a-Si PV and a three-layer ETFE cushion roof was built and the experiment was carried out under summer sunny condition. Meanwhile, numerical model with real boundary conditions was performed in this paper. The experimental results show that the temperature sequence of the three layers was the middle, top and bottom layer and that the PV temperature caused by solar irradiance was 353.8 K. This gives evidence that the PV has a significant effect on the temperature distribution. The experimental temperature was in good agreement with the corresponding location of the numerical temperature since the maximum temperature difference was only 3.4 K. Therefore, the numerical results were justified and then used to analyze the airflow characteristics and calculate the thermal performances. For the airflow characteristics, it is found that the temperature distribution was not uniform and the main transport mechanisms in the upper and lower chambers formed by the three layers were the convection and conduction, respectively. For the thermal performances, the surface convective heat transfer coefficients were obtained, which have validated that thermal performances of the three-layer ETFE cushion integrated a-Si PV are better than

  20. Interaction of positron beams with thin silver foils and surfaces

    International Nuclear Information System (INIS)

    Rysholt Poulsen, M.

    1994-01-01

    Experimental investigations of positron interactions with solid silver and the necessary platform to analyse the data have been presented. The main objective was to study Ps formation at a Ag(100) surface. The different ingredients of the scenario, including thermalization and diffusion of positrons and emission of Ps, were analysed and quantified in whatever way appropriate. The scattering and possible thermalization were described. The parametrization of Monte-Carlo simulated implantation profiles for semi-infinite materials were presented and the applicability of such profiles to thin foils assessed. The latter was done in conjunction with an analysis of experimental data on thermalization and diffusion in 1900 Aa Ag(100) foils. The necessity for MC simulated rather than parametrized implantation profiles was argued. The velocity of thermally desorbed Ps from a Ag(100) surface at ∼800 K appeared to obey and one-dimensional Maxwell Boltzmann distribution multiplied by a velocity dependent factor. More experimental investigations are needed before firm conclusions can be made on the nature of the emission process. The velocity distribution, though, was found to be near-thermal and indicative of the sample temperature. It has been shown that positrons can be converted into Ps atoms in the transmission geometry of a thin 1900 Aa Ag(100) foil with a high efficiency. Furthermore, 61% of the emitted Ps will have a mean velocity of v z =1.2x10 5 m/sec and 39% will have a maximum kinetic energy of 1.5 eV (v z =5.1x10 5 m/sec) at a foil temperature of 800 K, all velocities that are suitable for producing a 'dense' Ps gas target. (EG) 12 refs

  1. A study of phonon anisotropic scattering effect on silicon thermal conductivity at nanoscale

    International Nuclear Information System (INIS)

    Bong, Victor N-S; Wong, Basil T.

    2015-01-01

    Previous studies have shown that anisotropy in phonon transport exist because of the difference in phonon dispersion relation due to different lattice direction, as observed by a difference in in-plane and cross-plane thermal conductivity. The directional preference (such as forward or backward scattering) in phonon propagation however, remains a relatively unexplored frontier. Our current work adopts a simple scattering probability in radiative transfer, which is called Henyey and Greenstein probability density function, and incorporates it into the phonon Monte Carlo simulation to investigate the effect of directional scattering in phonon transport. In this work, the effect of applying the anisotropy scattering is discussed, as well as its impact on the simulated thermal conductivity of silicon thin films. While the forward and backward scattering will increase and decrease thermal conductivity respectively, the extent of the effect is non-linear such that forward scattering has a more obvious effect than backward scattering

  2. A study of phonon anisotropic scattering effect on silicon thermal conductivity at nanoscale

    Energy Technology Data Exchange (ETDEWEB)

    Bong, Victor N-S; Wong, Basil T. [Swinburne Sarawak Research Centre for Sustainable Technologies, Faculty of Engineering, Computing & Science, Swinburne University of Technology Sarawak Campus, 93350 Kuching, Sarawak (Malaysia)

    2015-08-28

    Previous studies have shown that anisotropy in phonon transport exist because of the difference in phonon dispersion relation due to different lattice direction, as observed by a difference in in-plane and cross-plane thermal conductivity. The directional preference (such as forward or backward scattering) in phonon propagation however, remains a relatively unexplored frontier. Our current work adopts a simple scattering probability in radiative transfer, which is called Henyey and Greenstein probability density function, and incorporates it into the phonon Monte Carlo simulation to investigate the effect of directional scattering in phonon transport. In this work, the effect of applying the anisotropy scattering is discussed, as well as its impact on the simulated thermal conductivity of silicon thin films. While the forward and backward scattering will increase and decrease thermal conductivity respectively, the extent of the effect is non-linear such that forward scattering has a more obvious effect than backward scattering.

  3. Effects of ion implantation on charges in the silicon--silicon dioxide system

    International Nuclear Information System (INIS)

    Learn, A.J.; Hess, D.W.

    1977-01-01

    Structures consisting of thermally grown oxide on silicon were implanted with boron, arsenic, or argon ions. For argon implantation through oxides, an increased fixed oxide charge (Q/sub ss/) was observed with the increase being greater for than for silicon. This effect is attributed to oxygen recoil which produces additional excess ionized silicon in the oxide of a type similar to that arising in thermal oxidation. Fast surface state (N/sub st/) generation was also noted which in most cases obscured the Q/sub ss/ increase. Of various heat treatments tested, only a 900 degreeC anneal in hydrogen annihilated N/sub st/ and allowed Q/sub ss/ measurement. Such N/sub st/ apparently arises as a consequence of implantation damage at the silicon--silicon dioxide interface. With the exception of boron implantations into thick oxides or through aluminum electrodes, reduction of the mobile ionic charge (Q/sub o/) was achieved by implantation. The reduction again is presumably damage related and is not negated by high-temperature annealing but may be counterbalanced by aluminum incorporation in the oxide

  4. Fluorodeoxyglucose--positive internal mammary lymph node in breast cancer patients with silicone implants: is it always metastatic cancer?

    Science.gov (United States)

    Soudack, Michalle; Yelin, Alon; Simansky, David; Ben-Nun, Alon

    2013-07-01

    Patients with breast cancer following mastectomy and silicone implant reconstruction may have enlarged internal mammary lymph nodes with pathological uptake on positron emission tomography with (18)F-fluorodeoxyglucose. This lymphadenopathy is usually considered as metastatic in nature, but has also been reported to be related to other conditions, including silicon migration. The purpose of this study was to determine the rate of metastatic disease in this unique group of patients. A retrospective comparative study of 12 female patients with breast cancer with silicone implants referred for biopsy due to isolated internal mammary lymph node fluorodeoxyglucose uptake on positron emission tomography. Five patients (41.6%) had histological findings related to silicone (n = 4) or non-specific inflammation (n = 1). The remaining 7 (58.3%) had histological evidence of cancer recurrence. There was no significant difference in the fluorodeoxyglucose-standardized uptake value between the two groups. Fluorodeoxyglucose-positive mammary lymph nodes in patients with breast cancer following silicone implant reconstruction may be due to metastatic deposits, non-specific inflammation or silicone migration. Clinical and imaging characteristics are insufficient in differentiating between these conditions. Biopsy is recommended prior to initiation of further treatment.

  5. In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    We analyze the degradation of multi-crystalline silicon photovoltaic modules undergoing simultaneous thermal, mechanical, and humidity-freeze stress testing to develop a dark environmental chamber in-situ measurement procedure for determining module power loss. We analyze dark I-V curves measured...

  6. Microstructure Evolution and Protrusion of Electroplated Cu-Filled Through-Silicon Vias Subjected to Thermal Cyclic Loading

    Science.gov (United States)

    Chen, Si; An, Tong; Qin, Fei; Chen, Pei

    2017-10-01

    Through-silicon vias (TSVs) have become an important technology for three-dimensional integrated circuit (3D IC) packaging. Protrusion of electroplated Cu-filled vias is a critical reliability issue for TSV technology. In this work, thermal cycling tests were carried out to identify how the microstructure affects protrusion during thermal cycling. Cu protrusion occurs when the loading temperature is higher than 149°C. During the first five thermal cycles, the grain size of Cu plays a dominant role in the protrusion behavior. Larger Cu grain size before thermal cycling results in greater Cu protrusion. With increasing thermal cycle number, the effect of the Cu grain size reduces and the microstrain begins to dominate the Cu protrusion behavior. Higher magnitude of microstrain within Cu results in greater protrusion increment during subsequent thermal cycles. When the thermal cycle number reaches 25, the protrusion rate of Cu slows down due to strain hardening. After 30 thermal cycles, the Cu protrusion stabilizes within the range of 1.92 μm to 2.09 μm.

  7. Wide-range and fast thermally-tunable silicon photonic microring resonators using the junction field effect.

    Science.gov (United States)

    Wang, Xiaoxi; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

    2016-10-03

    Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a "pinched" p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 μs 10%-90% transition time, and with efficiency of 3.2 μW/GHz.

  8. Beam test of CSES silicon strip detector module

    Science.gov (United States)

    Zhang, Da-Li; Lu, Hong; Wang, Huan-Yu; Li, Xin-Qiao; Xu, Yan-Bing; An, Zheng-Hua; Yu, Xiao-xia; Wang, Hui; Shi, Feng; Wang, Ping; Zhao, Xiao-Yun

    2017-05-01

    The silicon-strip tracker of the China Seismo-Electromagnetic Satellite (CSES) consists of two double-sided silicon strip detectors (DSSDs) which provide incident particle tracking information. A low-noise analog ASIC VA140 was used in this study for DSSD signal readout. A beam test on the DSSD module was performed at the Beijing Test Beam Facility of the Beijing Electron Positron Collider (BEPC) using a 400-800 MeV/c proton beam. The pedestal analysis results, RMSE noise, gain correction, and intensity distribution of incident particles of the DSSD module are presented. Supported by the XXX Civil Space Programme

  9. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  10. Silicon-Based Nanoscale Composite Energetic Materials

    Science.gov (United States)

    2013-02-01

    1193-1211. 9. Krishnamohan, G., E.M. Kurian, and H.R. Rao, Thermal Analysis and Inverse Burning Rate Studies on Silicon-Potassium Nitrate System...reported in a journal paper and appears in the Appendix. Multiscale Nanoporous Silicon Combustion Introduction for nanoporous silicon effort While

  11. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa

    2013-05-30

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  12. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

    2013-01-01

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  13. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  14. Thermal stability of grain boundaries in nanocrystalline Zn studied by positron lifetime spectroscopy

    International Nuclear Information System (INIS)

    Zhou Kai; Li Hui; Pang Jinbiao; Wang Zhu

    2012-01-01

    Nanocrystalline Zn prepared by compacting nanoparticles with mean grain size about 55 nm at 15 MPa has been studied by positron lifetime spectroscopy. For the bulk Zn sample, the vacancy defect is annealed out at about 350 °C, but for the nanocrystalline Zn sample, the vacancy cluster in grain boundaries is quite difficult to be annealed out even at very high temperature (410 °C). In the grain boundaries of nanocrystalline Zn, the small free volume defect (not larger than divacancy) is dominant according to the high relative intensity for the short positron lifetime (τ 1 ). The oxide (ZnO) inside the grain boundaries has been found having an effect to hinder the decrease of average positron lifetime (τ av ), which probably indicates that the oxide stabilizes the microstructure of the grain boundaries. This stabilization is very important for the nanocrystalline materials using as radiation resistant materials.

  15. The thermal neutron absorption cross-sections, resonance integrals and resonance parameters of silicon and its stable isotopes

    International Nuclear Information System (INIS)

    Story, J.S.

    1969-09-01

    The data available up to the end of November 1968 on the thermal neutron absorption cross-sections, resonance absorption integrals, and resonance parameters of silicon and its stable isotopes are collected and discussed. Estimates are given of the mean spacing of the energy levels of the compound nuclei near the neutron binding energy. It is concluded that the thermal neutron absorption cross-section and resonance absorption integral of natural silicon are not well established. The data on these two parameters are somewhat correlated, and three different assessments of the resonance integral are presented which differ over-all by a factor of 230. Many resonances have been detected by charged particle reactions which have not yet been observed in neutron cross-section measurements. One of these resonances of Si 2 8, at E n = 4 ± 5 keV might account for the large resonance integral which is derived, very uncertainly, from integral data. The principal source of the measured resonance integral of Si 3 0 has not yet been located. The thermal neutron absorption cross-section of Si 2 8 appears to result mainly from a negative energy resonance, possibly the resonance at E n = - 59 ± 5 keV detected by the Si 2 8 (d,p) reaction. (author)

  16. Planned Positron Factory project

    International Nuclear Information System (INIS)

    Okada, Sohei

    1990-01-01

    The Japan Atomic Energy Research Institute, JAERI, has started, drafting a construction plan for the 'Positron Factory', in which intense energy-controllable monoenergetic positron beams are produced from pair-production reactions caused by high-energy electrons from a linac. The JAERI organized a planning committee to provide a basic picture for the Positron Factory. This article presents an overview of the interactions of positrons, intense positron sources and the research program and facilities planned for the project. The interactions of positrons and intense positron sources are discussed focusing on major characteristics of positrons in different energy ranges. The research program for the Positron Factory is then outlined, focusing on advanced positron annihilation techniques, positron spectroscopy (diffraction, scattering, channeling, microscopy), basic positron physics (exotic particle science), and positron beam technology. Discussion is also made of facilities required for the Positron Factory. (N.K.)

  17. Effects of quantum statistics of phonons on the thermal conductivity of silicon and germanium nanoribbons

    Science.gov (United States)

    Kosevich, Yuriy A.; Savin, Alexander V.; Cantarero, Andrés

    2013-01-01

    We present molecular dynamics simulation of phonon thermal conductivity of semiconductor nanoribbons with an account for phonon quantum statistics. In our semiquantum molecular dynamics simulation, dynamics of the system is described with the use of classical Newtonian equations of motion where the effect of phonon quantum statistics is introduced through random Langevin-like forces with a specific power spectral density (color noise). The color noise describes interaction of the molecular system with the thermostat. The thermal transport of silicon and germanium nanoribbons with atomically smooth (perfect) and rough (porous) edges are studied. We show that the existence of rough (porous) edges and the quantum statistics of phonon change drastically the low-temperature thermal conductivity of the nanoribbon in comparison with that of the perfect nanoribbon with atomically smooth edges and classical phonon dynamics and statistics. The rough-edge phonon scattering and weak anharmonicity of the considered lattice produce a weakly pronounced maximum of thermal conductivity of the nanoribbon at low temperature.

  18. Positron sources

    International Nuclear Information System (INIS)

    Chehab, R.

    1989-01-01

    A tentative survey of positron sources is given. Physical processes on which positron generation is based are indicated and analyzed. Explanation of the general features of electromagnetic interactions and nuclear β + decay makes it possible to predict the yield and emittance for a given optical matching system between the positron source and the accelerator. Some kinds of matching systems commonly used - mainly working with solenoidal fields - are studied and the acceptance volume calculated. Such knowledge is helpful in comparing different matching systems. Since for large machines, a significant distance exists between the positron source and the experimental facility, positron emittance has to be preserved during beam transfer over large distances and methods used for that purpose are indicated. Comparison of existing positron sources leads to extrapolation to sources for future linear colliders

  19. Influence of defects on positron transmission and annihilation in the lithium fluoride crystal

    International Nuclear Information System (INIS)

    Varisov, A.Z.; Kozlov, V.G.

    1984-01-01

    The positron implantation profile and the angular distribution of annihilation γ quanta were determined for a lithium fluoride crystal under β + and γ irradiation ( 22 Na source). The positron absorption coefficient of the irradiated crystal was α = 76.2 +- 1.5 cm -1 . The angular distribution had a strong narrow component. After thermal bleaching of the crystal, α = 91.9 +- 1.5 cm -1 , the narrow component made a smaller contribution to the angular distribution, and its half-width increased. The positron mobility was found to be μ = 18 +- 8 cm 2 x V -1 x sec -1 . It is suggested that defects influence in two ways the fate of positrons in the lithium fluoride crystal: free positrons may be trapped by some defects (cationic vacancies) or annihilated in collisions with others (F centers). The defect concentration is estimated

  20. Positron-acoustic waves in an electron-positron plasma with an electron beam

    International Nuclear Information System (INIS)

    Nejoh, Y.N.

    1996-01-01

    The nonlinear wave structures of large-amplitude positron-acoustic waves are studied in an electron-positron plasma in the presence of an electron beam with finite temperature and hot electrons and positrons. The region where positron-acoustic waves exist is presented by analysing the structure of the pseudopotential. The region depends sensitively on the positron density, the positron temperature and the electron beam temperature. It is shown that the maximum amplitude of the wave decreases as the positron temperature increases, and the region of positron-acoustic waves spreads as the positron temperature increases. 11 refs., 5 figs

  1. Ground-state splitting of ultrashallow thermal donors with negative central-cell corrections in silicon

    Science.gov (United States)

    Hara, Akito; Awano, Teruyoshi

    2017-06-01

    Ultrashallow thermal donors (USTDs), which consist of light element impurities such as carbon, hydrogen, and oxygen, have been found in Czochralski silicon (CZ Si) crystals. To the best of our knowledge, these are the shallowest hydrogen-like donors with negative central-cell corrections in Si. We observed the ground-state splitting of USTDs by far-infrared optical absorption at different temperatures. The upper ground-state levels are approximately 4 meV higher than the ground-state levels. This energy level splitting is also consistent with that obtained by thermal excitation from the ground state to the upper ground state. This is direct evidence that the wave function of the USTD ground state is made up of a linear combination of conduction band minimums.

  2. Aluminum and silicon based phase change materials for high capacity thermal energy storage

    International Nuclear Information System (INIS)

    Wang, Zhengyun; Wang, Hui; Li, Xiaobo; Wang, Dezhi; Zhang, Qinyong; Chen, Gang; Ren, Zhifeng

    2015-01-01

    Six compositions of aluminum (Al) and silicon (Si) based materials: 87.8Al-12.2Si, 80Al–20Si, 70Al–30Si, 60Al–40Si, 45Al–40Si–15Fe, and 17Al–53Si–30Ni (atomic ratio), were investigated for potentially high thermal energy storage (TES) application from medium to high temperatures (550–1200 °C) through solid–liquid phase change. Thermal properties such as melting point, latent heat, specific heat, thermal diffusivity and thermal conductivity were investigated by differential scanning calorimetry and laser flash apparatus. The results reveal that the thermal storage capacity of the Al–Si materials increases with increasing Si concentration. The melting point and latent heat of 45Al–40Si–15Fe and 17Al–53Si–30Ni are ∼869 °C and ∼562 J g −1 , and ∼1079 °C and ∼960 J g −1 , respectively. The measured thermal conductivity of Al–Si binary materials depend on Si concentration and is higher than 80 W m −1  K −1 from room temperature to 500 °C, which is almost two orders of magnitude higher than those of salts that are commonly used phase change material for thermal energy storage. - Highlights: • Six kinds of materials were investigated for thermal energy storage (550–1200 °C). • Partial melting of Al–Si materials show progressively changing temperatures. • Studied materials can be used in three different working temperature ranges. • Materials are potentially good candidates for thermal energy storage applications.

  3. Process for making silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  4. Tailoring of silicon crystals for relativistic-particle channeling

    International Nuclear Information System (INIS)

    Guidi, V.; Antonini, A.; Baricordi, S.; Logallo, F.; Malagu, C.; Milan, E.; Ronzoni, A.; Stefancich, M.; Martinelli, G.; Vomiero, A.

    2005-01-01

    In the last years, the research on channeling of relativistic particles has progressed considerably. A significant contribution has been provided by the development of techniques for quality improvement of the crystals. In particular, a planar etching of the surfaces of the silicon crystals proved useful to remove the superficial layer, which is a region very rich in imperfections, in turn leading to greater channeling efficiency. Micro-fabrication techniques, borrowed from silicon technology, may also be useful: micro-indentation and deposition of tensile or compressive layers onto silicon samples allow one to impart an even curvature to the samples. In this way, different topologies may be envisaged, such as a bent crystal for deflection of protons and ions or an undulator to force coherent oscillations of positrons and electrons

  5. Thermodynamic analysis of thermal plasma process of composite zirconium carbide and silicon carbide production from zircon concentrates

    International Nuclear Information System (INIS)

    Kostic, Z.G.; Stefanovic, P.Lj.; Pavlovic; Pavlovic, Z.N.; Zivkovic, N.V.

    2000-01-01

    Improved zirconium ceramics and composites have been invented in an effort to obtain better resistance to ablation at high temperature. These ceramics are suitable for use as thermal protection materials on the exterior surfaces of spacecraft, and in laboratory and industrial environments that include flows of hot oxidizing gases. Results of thermodynamic consideration of the process for composite zirconium carbide and silicon carbide ultrafine powder production from ZrSiO 4 in argon thermal plasma and propane-butane gas as reactive quenching reagents are presented in the paper. (author)

  6. Low-energy nuclear physics with high-segmentation silicon arrays

    International Nuclear Information System (INIS)

    Betts, R.R.; Univ. of Illinois, Chicago, IL

    1994-01-01

    A brief history is given of silicon detectors leading up to the development of ion-implanted strip detectors. Two examples of their use in low energy nuclear physics are discussed; the search for exotic alpha-chain states in 24 Mg and studies of anomalous positron-electron pairs produced in collisions of very heavy ions

  7. Positron sources

    International Nuclear Information System (INIS)

    Chehab, R.

    1994-01-01

    A tentative survey of positron sources is given. Physical processes on which positron generation is based are indicated and analyzed. Explanation of the general features of electromagnetic interactions and nuclear β + decay makes it possible to predict the yield and emittance for a given optical matching system between the positron source and the accelerator. Some kinds of matching systems commonly used - mainly working with solenoidal field - are studied and the acceptance volume calculated. Such knowledge is helpful in comparing different matching systems. Since for large machines, a significant distance exists between the positron source and the experimental facility, positron emittance has to be preserved during beam transfer over large distances and methods used for that purpose are indicated. Comparison of existing positron sources leads to extrapolation to sources for future linear colliders. Some new ideas associated with these sources are also presented. (orig.)

  8. Subnanopore filling during water vapor adsorption on microporous silica thin films as seen by low-energy positron annihilation

    Science.gov (United States)

    Ito, Kenji; Yoshimoto, Shigeru; O'Rourke, Brian E.; Oshima, Nagayasu; Kumagai, Kazuhiro

    2018-02-01

    Positron annihilation lifetime spectroscopy (PALS) using a low-energy positron microbeam extracted into air was applied to elucidating molecular-level pore structures formed in silicon-oxide-backboned microporous thin films under controlled humidity conditions; as a result, a direct observation of the interstitial spaces in the micropores filled with water molecules was achieved. It was demonstrated that PALS using a microbeam extracted into air in combination with water vapor adsorption is a powerful tool for the in-situ elucidation of both open and closed subnanoscaled pores of functional thin materials under practical conditions.

  9. A high intensity positron beam at the Brookhaven reactor

    International Nuclear Information System (INIS)

    Weber, M.; Lynn, K.G.; Roellig, L.O.; Mills, A.P. Jr.; Moodenbaugh, A.R.

    1987-01-01

    We describe a high intensity, low energy positron beam utilizing high specific activity /sup 64/Cu sources (870 Ci/g) produced in a reactor with high thermal neutron flux. Fast-to-slow moderation can be performed in a self moderation mode or with a transmission moderator. Slow positron rates up to 1.6 x 10/sup 8/ e/sup +//s with a half life of 12.8 h are calculated. Up to 1.0 x 10/sup 8/ e/sup +//s have been observed. New developments including a Ne moderator and an on-line isotope separation process are discussed. 21 refs., 9 figs

  10. Gadolinium oxide coated fully depleted silicon-on-insulator transistors for thermal neutron dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu; Gouker, Pascale M.

    2013-09-01

    Fully depleted silicon-on-insulator transistors coated with gadolinium oxide are shown to be effective thermal neutron dosimeters. The theoretical neutron detection efficiency is calculated to be higher for Gd{sub 2}O{sub 3} than for other practical converter materials. Proof-of-concept dosimeter devices were fabricated and tested during thermal neutron irradiation. The transistor current changes linearly with neutron dose, consistent with increasing positive charge in the SOI buried oxide layer generated by ionization from high energy {sup 157}Gd(n,γ){sup 158}Gd conversion electrons. The measured neutron sensitivity is approximately 1/6 the maximum theoretical value, possibly due to electron–hole recombination or conversion electron loss in interconnect wiring above the transistors. -- Highlights: • A novel Gd{sub 2}O{sub 3} coated FDSOI MOSFET thermal neutron dosimeter is presented. • Dosimeter can detect charges generated from {sup 157}Gd(n,γ){sup 158}Gd conversion electrons. • Measured neutron sensitivity is comparable to that calculated theoretically. • Dosimeter requires zero power during operation, enabling new application areas.

  11. Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

    International Nuclear Information System (INIS)

    Hezel, R.; Streb, W.

    1985-01-01

    Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

  12. Thermally-treated Pt-coated silicon AFM tips for wear resistance in ferroelectric data storage

    International Nuclear Information System (INIS)

    Bhushan, Bharat; Palacio, Manuel; Kwak, Kwang Joo

    2008-01-01

    In ferroelectric data storage, a conductive atomic force microscopy (AFM) probe with a noble metal coating is placed in contact with a lead zirconate titanate (PZT) film. The understanding and improvement of probe tip wear, particularly at high velocities, is needed for high data rate recording. A commercial Pt-coated silicon AFM probe was thermally treated in order to form platinum silicide at the near-surface. Nanoindentation, nanoscratch and wear experiments were performed to evaluate the mechanical properties and wear performance at high velocities. The thermally treated tip exhibited lower wear than the untreated tip. The tip wear mechanism is adhesive and abrasive wear with some evidence of impact wear. The enhancement in mechanical properties and wear resistance in the thermally treated film is attributed to silicide formation in the near-surface. Auger electron spectroscopy and electrical resistivity measurements confirm the formation of platinum silicide. This study advances the understanding of thin film nanoscale surface interactions

  13. Mechanical and thermal properties of phthalonitrile resin reinforced with silicon carbide particles

    International Nuclear Information System (INIS)

    Derradji, Mehdi; Ramdani, Noureddine; Zhang, Tong; Wang, Jun; Feng, Tian-tian; Wang, Hui; Liu, Wen-bin

    2015-01-01

    Highlights: • SiC microparticles improve the mechanical properties of phthalonitrile resin. • Excellent thermal stability achieved by adding SiC particles in phthalonitrile resin. • Adding 20 wt.% of SiC microparticles increases the T g by 38 °C. • Silane coupling agent can enhance the adhesion and dispersion of particles/matrix. - Abstract: A new type of composite based on phthalonitrile resin reinforced with silicon carbide (SiC) microparticles was prepared. For various weight ratios ranging between 0% and 20%, the effect of the micro-SiC particles on the mechanical and thermal properties has been studied. Results from thermal analysis revealed that the starting decomposition temperature and the residual weight were significantly improved upon adding the reinforcing phase. At the maximum micro-SiC loading, dynamic mechanical analysis (DMA) showed an important enhancement in both the storage modulus and glass transition temperature (T g ), reaching 3.1 GPa and 338 °C, respectively. The flexural strength and modulus as well as the microhardness were significantly enhanced by adding the microfillers. Tensile test revealed enhancements in the composites toughness upon adding the microparticles. Polarization optical microscope (POM) and scanning electron microscope (SEM) analysis confirmed that mechanical and thermal properties improvements are essentially attributed to the good dispersion and adhesion between the particles and the resin

  14. In Situ Determination of Thermal Profiles during Czochralski Silicon Crystal Growth by an Eddy Current Technique.

    Science.gov (United States)

    Choe, Kwang Su.

    An eddy current testing method was developed to continuously monitor crystal growth process and determine thermal profiles in situ during Czochralski silicon crystal growth. The work was motivated by the need to improve the quality of the crystal by controlling thermal gradients and annealing history over the growth cycle. The experimental concept is to monitor intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. The experiments were performed in a resistance-heated Czochralski puller with a 203 mm (8 inch) diameter crucible containing 6.5 kg melt. The silicon crystals being grown were about 80 mm in diameter and monitored by an encircling sensor operating at three different test frequencies (86, 53 and 19 kHz). A one-dimensional analytical solution was employed to translate the detected signals into electrical conductivities. In terms of experiments, the effects of changes in growth condition, which is defined by crystal and crucible rotation rates, crucible position, pull rate, and hot-zone configuration, were investigated. Under a given steady-state condition, the thermal profile was usually stable over the entire length of crystal growth. The profile shifted significantly, however, when the crucible rotation rate was kept too high. As a direct evidence to the effects of melt flow on heat transfer process, a thermal gradient minimum was observed about the crystal/crucible rotation combination of 20/-10 rpm cw. The thermal gradient reduction was still most pronounced when the pull rate or the radiant heat loss to the environment was decreased: a nearly flat axial thermal gradient was achieved when either the pull rate was halved or the height of the exposed crucible wall was effectively doubled. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5 ^{rm o}C/mm. Regardless of growth condition, the three-frequency data revealed radial thermal gradients much larger

  15. Transmission positron microscopes

    International Nuclear Information System (INIS)

    Doyama, Masao; Kogure, Yoshiaki; Inoue, Miyoshi; Kurihara, Toshikazu; Yoshiie, Toshimasa; Oshima, Ryuichiro; Matsuya, Miyuki

    2006-01-01

    Immediate and near-future plans for transmission positron microscopes being built at KEK, Tsukuba, Japan, are described. The characteristic feature of this project is remolding a commercial electron microscope to a positron microscope. A point source of electrons kept at a negative high voltage is changed to a point source of positrons kept at a high positive voltage. Positional resolution of transmission microscopes should be theoretically the same as electron microscopes. Positron microscopes utilizing trapping of positrons have always positional ambiguity due to the diffusion of positrons

  16. Inkjet 3D printing of UV and thermal cure silicone elastomers for dielectric elastomer actuators

    Science.gov (United States)

    McCoul, David; Rosset, Samuel; Schlatter, Samuel; Shea, Herbert

    2017-12-01

    Dielectric elastomer actuators (DEAs) are an attractive form of electromechanical transducer, possessing high energy densities, an efficient design, mechanical compliance, high speed, and noiseless operation. They have been incorporated into a wide variety of devices, such as microfluidic systems, cell bioreactors, tunable optics, haptic displays, and actuators for soft robotics. Fabrication of DEA devices is complex, and the majority are inefficiently made by hand. 3D printing offers an automated and flexible manufacturing alternative that can fabricate complex, multi-material, integrated devices consistently and in high resolution. We present a novel additive manufacturing approach to DEA devices in which five commercially available, thermal and UV-cure DEA silicone rubber materials have been 3D printed with a drop-on-demand, piezoelectric inkjet system. Using this process, 3D structures and high-quality silicone dielectric elastomer membranes as thin as 2 μm have been printed that exhibit mechanical and actuation performance at least as good as conventionally blade-cast membranes. Printed silicone membranes exhibited maximum tensile strains of up to 727%, and DEAs with printed silicone dielectrics were actuated up to 6.1% area strain at a breakdown strength of 84 V μm-1 and also up to 130 V μm-1 at 2.4% strain. This approach holds great potential to manufacture reliable, high-performance DEA devices with high throughput.

  17. A Numerical Study on Phonon Spectral Contributions to Thermal Conduction in Silicon-on-Insulator Transistor Using Electron-Phonon Interaction Model

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Hyung-sun; Koh, Young Ha; Jin, Jae Sik [Chosun College of Science and Technology, Gwangju (Korea, Republic of)

    2017-06-15

    The aim of this study is to understand the phonon transfer characteristics of a silicon thin film transistor. For this purpose, the Joule heating mechanism was considered through the electron-phonon interaction model whose validation has been done. The phonon transport characteristics were investigated in terms of phonon mean free path for the variations in the device power and silicon layer thickness from 41 nm to 177 nm. The results may be used for developing the thermal design strategy for achieving reliability and efficiency of the silicon-on-insulator (SOI) transistor, further, they will increase the understanding of heat conduction in SOI systems, which are very important in the semiconductor industry and the nano-fabrication technology.

  18. Investigating the Effect of Thermal Annealing Process on the Photovoltaic Performance of the Graphene-Silicon Solar Cell

    Directory of Open Access Journals (Sweden)

    Lifei Yang

    2015-01-01

    Full Text Available Graphene-silicon (Gr-Si Schottky solar cell has attracted much attention recently as promising candidate for low-cost photovoltaic application. For the fabrication of Gr-Si solar cell, the Gr film is usually transferred onto the Si substrate by wet transfer process. However, the impurities induced by this process at the graphene/silicon (Gr/Si interface, such as H2O and O2, degrade the photovoltaic performance of the Gr-Si solar cell. We found that the thermal annealing process can effectively improve the photovoltaic performance of the Gr-Si solar cell by removing these impurities at the Gr/Si interface. More interestingly, the photovoltaic performance of the Gr-Si solar cell can be improved, furthermore, when exposed to air environment after the thermal annealing process. Through investigating the characteristics of the Gr-Si solar cell and the properties of the Gr film (carrier density and sheet resistance, we point out that this phenomenon is caused by the natural doping effect of the Gr film.

  19. Local structure reconstruction in hydrogenated amorphous silicon from angular correlation and synchrotron diffraction studies

    International Nuclear Information System (INIS)

    Britton, D.T.; Minani, E.; Knoesen, D.; Schut, H.; Eijt, S.W.H.; Furlan, F.; Giles, C.; Haerting, M.

    2006-01-01

    Hydrogenated amorphous silicon (a-Si:H) is a widely used thin film semiconductor material which is still incompletely understood. It is generally assumed to form a continuous random network, with a high concentration of coordination defects (dangling bonds), which are hydrogen terminated. Neither the exact nature of these sites nor the degree of medium range order has been fully determined. In this paper, we present the first results for the local structure, from a combined study using angular correlation of positron annihilation radiation (ACAR) and synchrotron radiation diffraction. Reciprocal space information is obtained directly, for the mesoscale structure and the local defect structure, from the orientation dependent diffraction and 2D-ACAR patterns, respectively. Furthermore, inversion of both patterns yields a comparison of real space information through maps of the silicon-silicon pair correlation function and the electron-positron autocorrelation function B 2γ (r). From this information, it is possible to identify the dominant structural defect as a vacancy-size dangling bond cluster, around which the network strain is fully relaxed

  20. Positron scattering and annihilation from hydrogenlike ions

    International Nuclear Information System (INIS)

    Novikov, S.A.; Bromley, M.W.J.; Mitroy, J.

    2004-01-01

    The Kohn variational method is used with a configuration-interaction-type wave function to determine the J=0 and J=1 phase shifts and annihilation parameter Z eff for positron-hydrogenic ion scattering. The phase shifts are within 1-2% of the best previous calculations. The values of Z eff are small and do not exceed unity for any of the momenta considered. At thermal energies Z eff is minute with a value of order 10 -50 occurring for He + at k=0.05a 0 -1 . In addition to the variational calculations, analytic expressions for the phase shift and annihilation parameters within the Coulomb wave Born approximation are derived and used to help elucidate the dynamics of positron collisions with positive ions

  1. Impact of Total Ionizing Dose Radiation Testing and Long-Term Thermal Cycling on the Operation of CMF20120D Silicon Carbide Power MOSFET

    Science.gov (United States)

    Patterson, Richard L.; Scheidegger, Robert J.; Lauenstein, Jean-Marie; Casey, Megan; Scheick, Leif; Hammoud, Ahmad

    2013-01-01

    Power systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed.

  2. Effects of growth conditions on thermal profiles during Czochralski silicon crystal growth

    Science.gov (United States)

    Choe, Kwang Su; Stefani, Jerry A.; Dettling, Theodore B.; Tien, John K.; Wallace, John P.

    1991-01-01

    An eddy current testing method was used to continuously monitor crystal growth process and investigate the effects of growth conditions on thermal profiles during Czochralski silicon crystal growth. The experimental concept was to monitor the intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. In terms of the experiments, the effects of changes in growth parameters, which include the crystal and crucible rotation rates, crucible position, and pull rate, and hot-zone geometries were investigated. The results show that the crystal thermal profile could shift significantly as a function of crystal length if the closed-loop control fails to maintain a constant thermal condition. As a direct evidence to the effects of the melt flow on heat transfer processes, a thermal gradient minimum was observed when the crystal/crucible rotation combination was 20/-10 rpm cw. The thermal gradients in the crystal near the growth interface were reduced most by decreasing the pull rate or by reducing the radiant heat loss to the environment; a nearly constant axial thermal gradient was achieved when either the pull rate was decreased by half, the height of the exposed crucible wall was doubled, or a radiation shield was placed around the crystal. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5°C/mm. When compared to theoretical results found in literature, the axial profiles correlated well with the results of the models which included radiant interactions. However, the radial gradients estimated from three-frequency data were much higher than what were predicted by known theoretical models. This discrepancy seems to indicate that optical phenomenon within the crystal is significant and should be included in theoretical modeling.

  3. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  4. Positron annihilation in superconducting 123 compounds

    International Nuclear Information System (INIS)

    Peter, M.; Manuel, A.A.; Erb, A.

    1998-01-01

    After a brief review of the theory of angular correlation of positron annihilation radiation (ACAR), the authors illustrate experimental principles and give examples of successful determination of electron momentum density (EMD) and of positron lifetime in solids. The central question which the authors try to answer concerns the contribution of positron spectroscopy to the knowledge and understanding of the new high temperature superconducting oxides. They find that in these oxides also, partially filled bands exist and they can observe parts of their Fermi surface and measure lifetimes in accordance with band theoretical calculations. There are characteristic differences, however. The intensity of the anisotropy of the ACAR signal is below theoretical expectation and signals depend on sample preparation. Recent studies by the Geneva group have concerned dependence of the signals on impurities, on oxygen content and on the thermal history of preparation. Of particular interest are correlations between the variations of these signals and between the variations of structural and transport properties in these substances. Besides deliberate additions of impurities, the Geneva group also reports progress in the preparations of samples of highest purity (barium zirconate crucibles). The alloy series Pr x Y 1-x Ba 2 Cu 3 O 7-δ is of special interest because of exceptional transport properties. The recent positron results on these materials will be presented and commented in the light of theoretical models and in the light of the reported superconductivity of the Pr-compound

  5. Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

    Directory of Open Access Journals (Sweden)

    Gammon P.M.

    2017-01-01

    Full Text Available A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si wafer bonded to silicon carbide (SiC. This novel silicon-on-silicon-carbide (Si/SiC substrate solution promises to combine the benefits of silicon-on-insulator (SOI technology (i.e device confinement, radiation tolerance, high and low temperature performance with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance. Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

  6. Synthesis of Zirconium-Containing Polyhedral Oligometallasilsesquioxane as an Efficient Thermal Stabilizer for Silicone Rubber

    Directory of Open Access Journals (Sweden)

    Jiedong Qiu

    2018-05-01

    Full Text Available Free radicals play a negative role during the thermal degradation of silicone rubber (SR. Quenching free radicals is proposed to be an efficient way to improve the thermal-oxidative stability of SR. In this work, a novel zirconium-containing polyhedral oligometallasilsesquioxane (Zr-POSS with free-radical quenching capability was synthesized and characterized. The incorporation of Zr-POSS effectively improved the thermal-oxidative stability of SR. The T5 (temperature at 5% weight loss of SR/Zr-POSS significantly increased by 31.7 °C when compared to the unmodified SR. Notably, after aging 12 h at 280 °C, SR/Zr-POSS was still retaining about 65%, 60%, 75%, and 100% of the tensile strength, tear strength, elongation at break, and hardness before aging, respectively, while the mechanical properties of the unmodified SR were significantly decreased. The possible mechanism of Zr-POSS for improving the thermal-oxidative stability of SR was intensively studied and it was revealed that the POSS structure could act as a limiting point to suppress the random scission reaction of backbone. Furthermore, Zr could quench the free radicals by its empty orbital and transformation of valence states. Therefore, it effectively suppressed the thermal-oxidative degradation and crosslinking reaction of the side chains.

  7. The effect of thermal oxidation on the luminescence properties of nanostructured silicon.

    Science.gov (United States)

    Liu, Lijia; Sham, Tsun-Kong

    2012-08-06

    Herein is reported a detailed study of the luminescence properties of nanostructured Si using X-ray excited optical luminescence (XEOL) in combination with X-ray absorption near-edge structures (XANES). P-type Si nanowires synthesized via electroless chemical etching from Si wafers of different doping levels and porous Si synthesized using electrochemical method are examined under X-ray excitation across the Si K-, L(3,2) -, and O K-edges. It is found that while as-prepared Si nanostructures are weak light emitters, intense visible luminescence is observed from thermally oxidized Si nanowires and porous Si. The luminescence mechanism of Si upon oxidation is investigated by oxidizing nanostructured Si at different temperatures. Interestingly, the two luminescence bands observed show different response with the variation of absorption coefficient upon Si and O core-electron excitation in elemental silicon and silicon oxide. A correlation between luminescence properties and electronic structures is thus established. The implications of the finding are discussed in terms of the behavior of the oxygen deficient center (OCD) and non-bridging oxygen hole center (NBOHC). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. The DAMPE silicon tungsten tracker

    CERN Document Server

    Gallo, Valentina; Asfandiyarov, R; Azzarello, P; Bernardini, P; Bertucci, B; Bolognini, A; Cadoux, F; Caprai, M; Domenjoz, M; Dong, Y; Duranti, M; Fan, R; Franco, M; Fusco, P; Gargano, F; Gong, K; Guo, D; Husi, C; Ionica, M; Lacalamita, N; Loparco, F; Marsella, G; Mazziotta, M N; Mongelli, M; Nardinocchi, A; Nicola, L; Pelleriti, G; Peng, W; Pohl, M; Postolache, V; Qiao, R; Surdo, A; Tykhonov, A; Vitillo, S; Wang, H; Weber, M; Wu, D; Wu, X; Zhang, F; De Mitri, I; La Marra, D

    2017-01-01

    The DArk Matter Particle Explorer (DAMPE) satellite has been successfully launched on the 17th December 2015. It is a powerful space detector designed for the identification of possible Dark Matter signatures thanks to its capability to detect electrons and photons with an unprecedented energy resolution in an energy range going from few GeV up to 10 TeV. Moreover, the DAMPE satellite will contribute to a better understanding of the propagation mechanisms of high energy cosmic rays measuring the nuclei flux up to 100 TeV. DAMPE is composed of four sub-detectors: a plastic strip scintillator, a silicon-tungsten tracker-converter (STK), a BGO imaging calorimeter and a neutron detector. The STK is made of twelve layers of single-sided AC-coupled silicon micro-strip detectors for a total silicon area of about 7 $m^2$ . To promote the conversion of incident photons into electron-positron pairs, tungsten foils are inserted into the supporting structure. In this document, a detailed description of the STK constructi...

  9. New approaches for a time- and position-resolved detector for positron annihilation spectroscopy at PLEPS

    Energy Technology Data Exchange (ETDEWEB)

    Ackermann, Ulrich; Egger, Werner; Sperr, Peter; Loewe, Benjamin; Ravelli, Luca; Koegel, Gottfried; Dollinger, Guenther [Universitaet der Bundeswehr Muenchen, LRT2 (Germany); Jagutzki, Ottmar [Universitaet Frankfurt, RoentDek GmbH (Germany)

    2013-07-01

    The pulsed low energy positron system PLEPS at NEPOMUC at the FRM II is a tool for depth resolved positron lifetime measurements. Besides positron lifetime measurements 2D-AMOC (two dimensional age momentum correlation) experiments are also possible. 2D-AMOC provides in coincidence the lifetime of the positron and the longitudinal momentum distribution of the annihilating electron. It would be of great scientific concern to measure simultaneously the entire 3D-momentum distribution of the annihilating electron and the corresponding lifetime of the positron (4D-AMOC). To perform 4D-AMOC measurements, a time and spatially resolving detector with a time resolution of about 100 ps (FWHM) and a spatial resolution of circa 2 mm over an area of about 12 cm{sup 2} is required in coincidence with a pixelated Ge-detector and currently under development at our institute. It is intended to use a MCP-based UV-light detector with two MCP-stages coupled to a BaF{sub 2} scintillator. To achieve the spatial resolution the centroid information of the photoelectron-cloud is detected with a position sensitive anode installed outside the housing of the MCP detector. As an alternative to a MCP-based detector, silicon photomultipliers are also envisaged.

  10. Thermal Pyrolytic Graphite Enhanced Components

    Science.gov (United States)

    Hardesty, Robert E. (Inventor)

    2015-01-01

    A thermally conductive composite material, a thermal transfer device made of the material, and a method for making the material are disclosed. Apertures or depressions are formed in aluminum or aluminum alloy. Plugs are formed of thermal pyrolytic graphite. An amount of silicon sufficient for liquid interface diffusion bonding is applied, for example by vapor deposition or use of aluminum silicon alloy foil. The plugs are inserted in the apertures or depressions. Bonding energy is applied, for example by applying pressure and heat using a hot isostatic press. The thermal pyrolytic graphite, aluminum or aluminum alloy and silicon form a eutectic alloy. As a result, the plugs are bonded into the apertures or depressions. The composite material can be machined to produce finished devices such as the thermal transfer device. Thermally conductive planes of the thermal pyrolytic graphite plugs may be aligned in parallel to present a thermal conduction path.

  11. A thermal model for czochralski silicon crystal growth with an axial magnetic field

    Science.gov (United States)

    Hjellming, L. N.

    1990-07-01

    This paper presents a thermal model for molten silicon in a Czochralski crystal puller system with an applied uniform axial magnetic field. The melt depth is treated as continually decreasing, which affects the thermal environment of the melt and crystal. The radiative heat loss and the input heat flux are treated as functions of time, with a constraint placed on the heat lost to the crystal from the melt. As the melt motion reaches a steady state rapidly, the temperature and flow fields are treated as instantaneously steady at each melt depth. The heat transport is a mixture of conduction and convection, and by considering the crystal and crucible to be rotating with the same angular velocity, the flows driven by buoyancy and thermocapillarity are isolated and provide the convective heat transport in the melt for the range of magnetic field strengths 0.2 ≤ B ≤ 1.0T.

  12. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    Science.gov (United States)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  13. Thermal Response of Cooled Silicon Nitride Plate Due to Thermal Conductivity Effects Analyzed

    Science.gov (United States)

    Baaklini, George Y.; Abdul-Aziz, Ali; Bhatt, Ramakrishna

    2003-01-01

    Lightweight, strong, tough high-temperature materials are required to complement efficiency improvements for next-generation gas turbine engines that can operate with minimum cooling. Because of their low density, high-temperature strength, and high thermal conductivity, ceramics are being investigated as materials to replace the nickelbase superalloys that are currently used for engine hot-section components. Ceramic structures can withstand higher operating temperatures and a harsh combustion environment. In addition, their low densities relative to metals help reduce component mass (ref. 1). To complement the effectiveness of the ceramics and their applicability for turbine engine applications, a parametric study using the finite element method is being carried out. The NASA Glenn Research Center remains very active in conducting and supporting a variety of research activities related to ceramic matrix composites through both experimental and analytical efforts (ref. 1). The objectives of this work are to develop manufacturing technology, develop a thermal and environmental barrier coating (TBC/EBC), develop an analytical modeling capability to predict thermomechanical stresses, and perform a minimal burner rig test on silicon nitride (Si3N4) and SiC/SiC turbine nozzle vanes under simulated engine conditions. Moreover, we intend to generate a detailed database of the material s property characteristics and their effects on structural response. We expect to offer a wide range of data since the modeling will account for other variables, such as cooling channel geometry and spacing. Comprehensive analyses have begun on a plate specimen with Si3N4 cooling holes.

  14. Experimental identification of nitrogen-vacancy complexes in nitrogen implanted silicon

    Science.gov (United States)

    Adam, Lahir Shaik; Law, Mark E.; Szpala, Stanislaw; Simpson, P. J.; Lawther, Derek; Dokumaci, Omer; Hegde, Suri

    2001-07-01

    Nitrogen implantation is commonly used in multigate oxide thickness processing for mixed signal complementary metal-oxide-semiconductor and System on a Chip technologies. Current experiments and diffusion models indicate that upon annealing, implanted nitrogen diffuses towards the surface. The mechanism proposed for nitrogen diffusion is the formation of nitrogen-vacancy complexes in silicon, as indicated by ab initio studies by J. S. Nelson, P. A. Schultz, and A. F. Wright [Appl. Phys. Lett. 73, 247 (1998)]. However, to date, there does not exist any experimental evidence of nitrogen-vacancy formation in silicon. This letter provides experimental evidence through positron annihilation spectroscopy that nitrogen-vacancy complexes indeed form in nitrogen implanted silicon, and compares the experimental results to the ab initio studies, providing qualitative support for the same.

  15. Self-interstitials, vacancies and their clusters in silicon and germanium

    International Nuclear Information System (INIS)

    Seeger, A.; Foell, H.; Frank, W.

    1976-01-01

    The paper begins with a survey of knowledge about swirl defects in silicon. In particular, it is shown that recent identification of the A-swirls as dislocation loops of interstitial type strongly supports a previous suggestion that the predominant equilibrium defects controlling self-diffusion in silicon at high temperatures are self-interstitials. This is followed by a brief state-of-the-art report on self-interstitials in silicon, a field in which rapid progress has been made during the past half a decade. The discussion of vacancy-type defects, which stood in the limelight of the preceding conferences, is confined to some examples of recent interest, such as the interaction of vacancy-type defects with hydrogen atoms, positrons and positive muons. (author)

  16. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Veen, A. van; Schut, H.; Fedorov, A.V.; Labohm, F.; Neeft, E.A.C.; Konings, R.J.M.

    1999-01-01

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV 3 He ions with doses varying from 10 15 to 10 16 cm -2 and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2x10 15 cm -2 annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed

  17. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    Science.gov (United States)

    van Veen, A.; Schut, H.; Fedorov, A. V.; Labohm, F.; Neeft, E. A. C.; Konings, R. J. M.

    1999-01-01

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV 3He ions with doses varying from 10 15 to 10 16 cm -2 and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2 × 10 15 cm -2 annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed.

  18. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Veen, A. van E-mail: avveen@iri.tudelft.nl; Schut, H.; Fedorov, A.V.; Labohm, F.; Neeft, E.A.C.; Konings, R.J.M

    1999-01-02

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV {sup 3}He ions with doses varying from 10{sup 15} to 10{sup 16} cm{sup -2} and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2x10{sup 15} cm{sup -2} annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed.

  19. Characterization of radiation-induced defects in ZnO probed by positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Brunner, S.; Puff, W.; Balogh, A.G.; Mascher, P.

    2001-01-01

    In this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing of single crystals irradiated either with 3 MeV protons or with 1 or 2 MeV electrons, respectively. The investigations were performed with positron lifetime and Doppler-broadening measurements. The differently grown ZnO single crystals show positron bulk lifetimes in the range of 159-173 ps. (orig.)

  20. Characterization of radiation-induced defects in ZnO probed by positron annihilation spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Brunner, S.; Puff, W. [Technische Univ. Graz (Austria). Inst. fuer Technische Physik; Balogh, A.G. [Technische Hochschule Darmstadt (Germany). FB Materialwissenschaft; Mascher, P. [McMaster Univ., Hamilton, ON (Canada). Dept. of Engineering Physics

    2001-07-01

    In this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing of single crystals irradiated either with 3 MeV protons or with 1 or 2 MeV electrons, respectively. The investigations were performed with positron lifetime and Doppler-broadening measurements. The differently grown ZnO single crystals show positron bulk lifetimes in the range of 159-173 ps. (orig.)

  1. Experimental study on surface wrinkling of silicon monoxide film on compliant substrate under thermally induced loads

    Science.gov (United States)

    Li, Chuanwei; Kong, Yingxiao; Jiang, Wenchong; Wang, Zhiyong; Li, Linan; Wang, Shibin

    2017-06-01

    The wrinkling of a silicon monoxide thin film on a compliant poly(dimethylsiloxane) (PDMS) substrate structure was experimentally investigated in this study. The self-expansion effect of PDMS during film deposition was utilized to impose a pretensile strain on the structure through a specially made fixture. A laser scanning confocal microscope (LSCM) system with an in situ heating stage was employed for the real-time measurement. The Young’s modulus of the silicon monoxide thin film as well as the PDMS substrate was measured on the basis of the elasticity theory. Moreover, the effects of temperature variations on geometric parameters in the postbuckling state, such as wavelength and amplitude, were analyzed. It was proved that wavelength is relatively immune to thermal loads, while amplitude is much more sensitive.

  2. Apparatus for making molten silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1988-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  3. Silicon Detectors-Tools for Discovery in Particle Physics

    International Nuclear Information System (INIS)

    Krammer, Manfred

    2009-01-01

    Since the first application of Silicon strip detectors in high energy physics in the early 1980ies these detectors have enabled the experiments to perform new challenging measurements. With these devices it became possible to determine the decay lengths of heavy quarks, for example in the fixed target experiment NA11 at CERN. In this experiment Silicon tracking detectors were used for the identification of particles containing a c-quark. Later on, the experiments at the Large Electron Positron collider at CERN used already larger and sophisticated assemblies of Silicon detectors to identify and study particles containing the b-quark. A very important contribution to the discovery of the last of the six quarks, the top quark, has been made by even larger Silicon vertex detectors inside the experiments CDF and D0 at Fermilab. Nowadays a mature detector technology, the use of Silicon detectors is no longer restricted to the vertex regions of collider experiments. The two multipurpose experiments ATLAS and CMS at the Large Hadron Collider at CERN contain large tracking detectors made of Silicon. The largest is the CMS Inner Tracker consisting of 200 m 2 of Silicon sensor area. These detectors will be very important for a possible discovery of the Higgs boson or of Super Symmetric particles. This paper explains the first applications of Silicon sensors in particle physics and describes the continuous development of this technology up to the construction of the state of the art Silicon detector of CMS.

  4. Movable MEMS Devices on Flexible Silicon

    KAUST Repository

    Ahmed, Sally

    2013-05-05

    Flexible electronics have gained great attention recently. Applications such as flexible displays, artificial skin and health monitoring devices are a few examples of this technology. Looking closely at the components of these devices, although MEMS actuators and sensors can play critical role to extend the application areas of flexible electronics, fabricating movable MEMS devices on flexible substrates is highly challenging. Therefore, this thesis reports a process for fabricating free standing and movable MEMS devices on flexible silicon substrates; MEMS flexure thermal actuators have been fabricated to illustrate the viability of the process. Flexure thermal actuators consist of two arms: a thin hot arm and a wide cold arm separated by a small air gap; the arms are anchored to the substrate from one end and connected to each other from the other end. The actuator design has been modified by adding etch holes in the anchors to suit the process of releasing a thin layer of silicon from the bulk silicon substrate. Selecting materials that are compatible with the release process was challenging. Moreover, difficulties were faced in the fabrication process development; for example, the structural layer of the devices was partially etched during silicon release although it was protected by aluminum oxide which is not attacked by the releasing gas . Furthermore, the thin arm of the thermal actuator was thinned during the fabrication process but optimizing the patterning and etching steps of the structural layer successfully solved this problem. Simulation was carried out to compare the performance of the original and the modified designs for the thermal actuators and to study stress and temperature distribution across a device. A fabricated thermal actuator with a 250 μm long hot arm and a 225 μm long cold arm separated by a 3 μm gap produced a deflection of 3 μm before silicon release, however, the fabrication process must be optimized to obtain fully functioning

  5. Three Dimensional Positron Annihilation Momentum Measurement Technique Applied to Measure Oxygen-Atom Defects in 6H Silicon Carbide

    Science.gov (United States)

    2010-03-01

    Stormer et al [9] measured 6H SiC’s positron work function (Φ + ),-3.0 ± 0.2 eV, which is the same value for the most commonly used positron...Subjected to various Treatments‖, Materials Science Forum, Vols. 255-7, pp. 662-4. 9. Stormer J, Goodyear A, Anwand W, Brauer G, Coleman P, and

  6. Study of the silicon photomultipliers and their applications in positron emission tomography

    International Nuclear Information System (INIS)

    Xu, Chen

    2014-05-01

    This thesis deals with silicon photomultipliers (SiPM) used in scintillation detectors and their applications in positron emission tomography (PET). The study of the SiPM is mainly focused on the application to the proposed EndoTOFPET-US detector, which is a multi-modality PET detector facilitating the development of new biomarkers for pancreas and prostate cancers. A Monte Carlo simulation tool is developed for the optimization of the detector's single channel design. In order to obtain a 200 ps system coincidence time resolution and maximize the detector sensitivity, the requirements for the crystal geometry, light yield and SiPM photon detection efficiency are specified based on the simulation study. In addition, the nonlinear response of the SiPM can be corrected by the simulation tool and the energy resolution of the detector is extracted. A series of measurements are established to characterize SiPMs in a fast and reliable way with high precision. The static characterization measures the value of different components in the derived electrical model of the SiPM, whereas the dynamic characterization extracts parameters that is crucial for the operation of the SiPM. Several SiPM samples are tested and their characteristics are compared. The developed setup and the precision of the measurement fulfill the requirements of the quality assurance test for the commissioning of the EndoTOFPET-US detector. The test foresees large quantities of SiPMs to be characterized. In addition, the developed measuring procedure has contributed to the study of X-ray induced surface damage of a SiPM from Hamamatsu. Characteristics of the device are measured before and after irradiating the SiPM with different X-ray doses, the results are compared and discussed. A comparative study of a digital and an analog SiPM in gamma spectroscopy with the inorganic scintillator is presented. The characteristics of a prototype digital SiPM that is developed for the EndoTOFPETUS detector is

  7. Interfacial Characteristics of TiN Coatings on SUS304 and Silicon Wafer Substrates with Pulsed Laser Thermal Shock

    International Nuclear Information System (INIS)

    Seo, Nokun; Jeon, Seol; Choi, Youngkue; Shin, Hyun-Gyoo; Lee, Heesoo; Jeon, Min-Seok

    2014-01-01

    TiN coatings prepared on different substrates that had different coefficients of thermal expansion were subjected to pulsed laser thermal shock and observed by using FIB milling to compare the deterioration behaviors. TiN coating on SUS304, which had a larger CTE (⁓17.3 × 10 - 6 /℃) than the coating was degraded with pores and cracks on the surface and showed significant spalling of the coating layer over a certain laser pulses. TiN coating on silicon wafer with a smaller CTE value, ⁓4.2 × 10‒6 /℃, than the coating exhibited less degradation of the coating layer at the same ablation condition. Cracks propagated at the interface were observed in the coating on the silicon wafer, which induced a compressive stress to the coating. The coating on the SUS304 showed less interface cracks while the tensile stress was applied to the coating. Delamination of the coating layer related to the intercolumnar cracks at the interface was observed in both coatings through bright-field TEM analysis.

  8. Positron annihilation studies in CeNiIn and LaNiIn

    International Nuclear Information System (INIS)

    Ray, R.; Giri, S.; Sen, M.; Nambissan, P.M.G.; Ghoshray, K.; Ghoshray, A.; Sen, P.

    1997-01-01

    Doppler broadened positron annihilation spectral lineshape (DBPAS) and positron lifetime measurements in the temperature range 18-280 K have been performed in CeNiIn and LaNiIn systems. The nature of the temperature variations of the lifetime in both systems is almost similar in the whole temperature range studied, whereas the nature of the temperature variation of the S parameter in CeNiIn is similar to that in LaNiIn except in the temperature region 18-40 K. For the former system there is a dip around 20 K in the S parameter versus temperature curve. The lifetime versus T curve in both systems could be explained by the thermal expansion of the lattice. The S parameter versus T curve in LaNiIn could also be attributed to the thermal expansion of the lattice, whereas in CeNiIn the above mentioned dip seems an extra feature of the thermal expansion of the lattice. To understand this low temperature behaviour other results on the same system have been discussed. (orig.)

  9. The design and construction of a double-sided Silicon Microvertex Detector for the L3 experiment at CERN

    International Nuclear Information System (INIS)

    Adam, A.; Ambrosi, G.; Babucci, E.; Bertucci, B.; Biasini, M.; Bilei, G.M.; Caria, M.; Checcucci, B.; Easo, S.; Fiandrini, E.; Krastev, V.R.; Massetti, R.; Pauluzzi, M.; Santocchia, A.; Servoli, L.; Baschirotto, A.; Bosetti, M.; Pensotti, S.; Rancoita, P.G.; Rattaggi, M.; Terzi, G.; Battiston, R.; Bay, A.; Burger, W.J.; Extermann, P.; Perrin, E.; Susinno, G.F.; Bencze, G.Y.L.; Kornis, J.; Toth, J.; Bobbink, G.J.; Duinker, P.; Brooks, M.L.; Coan, T.E.; Kapustinsky, J.S.; Kinnison, W.W.; Lee, D.M.; Mills, G.B.; Thompson, T.C.; Busenitz, J.; DiBitonto, D.; Camps, C.; Commichau, V.; Hangartner, K.; Schmitz, P.; Chen, A.; Hou, S.; Lin, W.T.; Gougas, A.; Kim, D.; Paul, T.; Hauviller, C.; Herve, A.; Josa, I.; Landi, G.; Lebeau, M.; Lecomte, P.; Viertel, G.M.; Waldmeier, S.; Leiste, R.; Lejeune, E.; Weill, R.; Lohmann, W.; Nowak, H.; Sachwitz, M.; Schoeniech, B.; Tonisch, F.; Trowitzsch, G.; Vogt, H.; Passaleva, G.; Yeh, S.C.

    1993-01-01

    A Silicon Microvertex Detector (SMD) has been commissioned for the L3 experiment at the Large Electron-Positron colliding-beam accelerator (LEP) at the European Center for Nuclear Physics, (CERN). The SMD is a 72,672 channel, two layer barrel tracker that is comprised of 96 ac-coupled, double-sided silicon detectors. Details of the design and construction are presented

  10. Kinetic Monte Carlo study on the evolution of silicon surface roughness under hydrogen thermal treatment

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Gang; Wang, Yu; Wang, Junzhuan; Pan, Lijia; Yu, Linwei; Zheng, Youdou; Shi, Yi, E-mail: yshi@nju.edu.cn

    2017-08-31

    Highlights: • The KMC method is adopted to investigate the relationships between surface evolution and hydrogen thermal treatment conditions. • The reduction in surface roughness is divided into two stages at relatively low temperatures, both exhibiting exponential dependence on the time. • The optimized surface structure can be obtained by precisely adjusting thermal treatment temperatures and hydrogen pressures. - Abstract: The evolution of a two-dimensional silicon surface under hydrogen thermal treatment is studied by kinetic Monte Carlo simulations, focusing on the dependence of the migration behaviors of surface atoms on both the temperature and hydrogen pressure. We adopt different activation energies to analyze the influence of hydrogen pressure on the evolution of surface morphology at high temperatures. The reduction in surface roughness is divided into two stages, both exhibiting exponential dependence on the equilibrium time. Our results indicate that a high hydrogen pressure is conducive to obtaining optimized surfaces, as a strategy in the applications of three-dimensional devices.

  11. Electron momentum density measurements by means of positron annihilation and Compton spectroscopy

    International Nuclear Information System (INIS)

    Gerber, W.; Dlubek, G.; Marx, U.; Bruemmer, O.; Prautzsch, J.

    1982-01-01

    The electron momentum density is measured applying positron annihilation and Compton spectroscopy in order to get information about electron wave functions. Compton spectroscopic measurements of Pd-Ag and Cu-Zn alloy systems are carried out taking into account crystal structure, mixability, and order state. Three-dimensional momentum densities of silicon are determined in order to get better information about its electronic structure. The momentum density and the spin density of ferromagnetic nickel are investigated using angular correlation curves

  12. Development of an Electron-Positron Source for Positron Annihilation Lifetime Spectroscopy

    Science.gov (United States)

    2009-12-19

    REPORT Development of an electron- positron source for positron annihilation lifetime spectroscopy : FINAL REPORT 14. ABSTRACT 16. SECURITY...to generate radiation, to accelerate particles, and to produce electrons and positrons from vacuum. From applications using existing high-repetition...theoretical directions. This report reviews work directed toward the application of positron generation from laser interaction with matter 1. REPORT DATE

  13. Radiation from planar channeled 5-55 GeV/c positrons and electrons

    International Nuclear Information System (INIS)

    Atkinson, M.; Sharp, P.H.; Giddings, D.; Bussey, P.J.

    1982-01-01

    The emission of radiation from 5 to 55 GeV/c planar channeled positrons and electrons passing through a 135 μ thick silicon-crystal has been investigated. The intensity of the channeling-radiation is found to be 10 to 30 times the intensity of normal bremsstrahlung. For channeled electrons no structure is found in the spectrum, whereas strong and sharp peaks are found for positrons. This peak structure is extremely sharp at 5 GeV/c and for momenta above 20 GeV/c the structure disappears. For a classical description of channeling, but using an anharmonic potential, certain energies are found for which the maximum energy of the channeling radiation is practically independent of transverse energy. The possibility of making a monoenergetic γ-source in the range of 10-100 MeV is mentioned. (orig.)

  14. Optothermal response of a single silicon nanotip

    Science.gov (United States)

    Vella, A.; Shinde, D.; Houard, J.; Silaeva, E.; Arnoldi, L.; Blum, I.; Rigutti, L.; Pertreux, E.; Maioli, P.; Crut, A.; Del Fatti, N.

    2018-02-01

    The optical properties and thermal dynamics of conical single silicon nanotips are experimentally and theoretically investigated. The spectral and spatial dependencies of their optical extinction are quantitatively measured by spatial modulation spectroscopy (SMS). A nonuniform optical extinction along the tip axis and an enhanced near-infrared absorption, as compared to bulk crystalline silicon, are evidenced. This information is a key input for computing the thermal response of single silicon nanotips under ultrafast laser illumination, which is investigated by laser assisted atom probe tomography (La-APT) used as a highly sensitive temperature probe. A combination of these two experimental techniques and comparison with modeling also permits us to elucidate the impact of thermal effects on the laser assisted field evaporation process. Extension of this coupled approach opens up future perspectives for the quantitative study of the optical and thermal properties of a wide class of individual nano-objects, in particular elongated ones such as nanotubes, nanowires, and nanocones, which constitute promising nanosources for electron and/or ion emission.

  15. Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

    Science.gov (United States)

    Johnson, E. S.; Compton, W. D.

    1971-01-01

    Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

  16. Laser cutting sandwich structure glass-silicon-glass wafer with laser induced thermal-crack propagation

    Science.gov (United States)

    Cai, Yecheng; Wang, Maolu; Zhang, Hongzhi; Yang, Lijun; Fu, Xihong; Wang, Yang

    2017-08-01

    Silicon-glass devices are widely used in IC industry, MEMS and solar energy system because of their reliability and simplicity of the manufacturing process. With the trend toward the wafer level chip scale package (WLCSP) technology, the suitable dicing method of silicon-glass bonded structure wafer has become necessary. In this paper, a combined experimental and computational approach is undertaken to investigate the feasibility of cutting the sandwich structure glass-silicon-glass (SGS) wafer with laser induced thermal-crack propagation (LITP) method. A 1064 nm semiconductor laser cutting system with double laser beams which could simultaneously irradiate on the top and bottom of the sandwich structure wafer has been designed. A mathematical model for describing the physical process of the interaction between laser and SGS wafer, which consists of two surface heating sources and two volumetric heating sources, has been established. The temperature stress distribution are simulated by using finite element method (FEM) analysis software ABAQUS. The crack propagation process is analyzed by using the J-integral method. In the FEM model, a stationary planar crack is embedded in the wafer and the J-integral values around the crack front edge are determined using the FEM. A verification experiment under typical parameters is conducted and the crack propagation profile on the fracture surface is examined by the optical microscope and explained from the stress distribution and J-integral value.

  17. Anharmonicity Rise the Thermal Conductivity in Amorphous Silicon

    Science.gov (United States)

    Lv, Wei; Henry, Asegun

    We recently proposed a new method called Direct Green-Kubo Modal Analysis (GKMA) method, which has been shown to calculate the thermal conductivity (TC) of several amorphous materials accurately. A-F method has been widely used for amorphous materials. However, researchers have found out that it failed on several different materials. The missing component of A-F method is the harmonic approximation and considering only the interactions of modes with similar frequencies, which neglect interactions of modes with large frequency difference. On the contrary, GKMA method, which is based on molecular dynamics, intrinsically includes all types of phonon interactions. In GKMA method, each mode's TC comes from both mode self-correlations (autocorrelations) and mode-mode correlations (crosscorrelations). We have demonstrated that the GKMA predicted TC of a-Si from Tersoff potential is in excellent agreement with one of experimental results. In this work, we will present the GKMA applications on a-Si using multiple potentials and gives us more insight of the effect of anharmonicity on the TC of amorphous silicon. This research was supported Intel grant AGMT DTD 1-15-13 and computational resources by NSF supported XSEDE resources under allocations DMR130105 and TG- PHY130049.

  18. Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

    International Nuclear Information System (INIS)

    Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

    2012-01-01

    In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

  19. Experimental investigation of slow-positron emission from 4H-SiC and 6H-SiC surfaces

    International Nuclear Information System (INIS)

    Ling, C.C.; Beling, C.D.; Fung, S.; Weng, H.M.

    2002-01-01

    Slow-positron emission from the surfaces of as-grown n-type 4H-SiC and 6H-SiC (silicon carbide) with a conversion efficiency of ∼10 -4 has been observed. After 30 min of 1000 deg. C annealing in forming gas, the conversion efficiency of the n-type 6H-SiC sample was observed to be enhanced by 75% to 1.9x10 -4 , but it then dropped to ∼10 -5 upon a further 30 min annealing at 1400 deg. C. The positron work function of the n-type 6H-SiC was found to increase by 29% upon 1000 deg. C annealing. For both p-type 4H-SiC and p-type 6H-SiC materials, the conversion efficiency was of the order of ∼10 -5 , some ten times lower than that for the n-type materials. This was attributed to the band bending at the p-type material surface which caused positrons to drift away from the positron emitting surface. (author)

  20. Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

    Science.gov (United States)

    Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

    2014-10-21

    Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

  1. Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

    International Nuclear Information System (INIS)

    Fedotov, A.K.; Mazanik, A.V.; Ul'yashin, A.G.; Dzhob, R; Farner, V.R.

    2000-01-01

    Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon as well as polycrystalline shaped silicon have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in silicon in the process of hydrogen plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type single crystal silicon. This effect can be used for n-p- and p-n-p-silicon based device structures producing [ru

  2. Experimental and computational studies of positron-stimulated ion desorption from TiO2(1 1 0) surface

    Science.gov (United States)

    Yamashita, T.; Hagiwara, S.; Tachibana, T.; Watanabe, K.; Nagashima, Y.

    2017-11-01

    Experimental and computational studies of the positron-stimulated O+ ion desorption process from a TiO2(1 1 0) surface are reported. The measured data indicate that the O+ ion yields depend on the positron incident energy in the energy range between 0.5 keV and 15 keV. This dependence is closely related to the fraction of positrons which diffuse back to the surface after thermalization in the bulk. Based on the experimental and computational results, we conclude that the ion desorption via positron-stimulation occurs dominantly by the annihilation of surface-trapped positrons with core electrons of the topmost surface atoms.

  3. Annealing of dislocation loops in neutron-irradiated copper investigated by positron annihilation

    International Nuclear Information System (INIS)

    Gauster, W.B.; Mantl, S.; Schober, T.; Triftshauser, W.

    1975-01-01

    Positron annihilation angular correlation measurements were carried out on neutron-irradiated copper as a function of annealing temperature. Two types of specimens were used: single crystals irradiated with fast neutrons, and 10 B-doped polycrystalline samples irradiated with thermal neutrons. All irradiations were at approximately 320 0 K. A structure in the annealing curve, not previously observed by other techniques, indicates that between 460 and 600 0 K the dislocation loops present after irradiation dissociate and more effective positron trapping sites are formed. (auth)

  4. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  5. X-ray and γ-ray emission from channeled relativistic electrons and positrons

    International Nuclear Information System (INIS)

    Terhune, R.W.; Pantell, R.H.

    1977-01-01

    The characteristics of the radiation from channeled relativistic electrons and positrons are discussed and model calculations carried out. Radiation near 2.5 keV associated with transitions etween the 2 p→1s eigenstates of 2-MeV electrons channeled along the axis of MgO is predicted with 50 times the usual bremsstrahlung intensity in a 10% bandwidth. Recent low-energy bremsstrahlung measurements made with 28-MeV electrons propagating along an axis in silicon are interpreted in terms of this model

  6. Silicon micro-fluidic cooling for NA62 GTK pixel detectors

    CERN Document Server

    Romagnoli, G; Brunel, B; Catinaccio, A; Degrange, J; Mapelli, A; Morel, M; Noel, J; Petagna, P

    2015-01-01

    Silicon micro-channel cooling is being studied for efficient thermal management in application fields such as high power computing and 3D electronic integration. This concept has been introduced in 2010 for the thermal management of silicon pixel detectors in high energy physics experiments. Combining the versatility of standard micro-fabrication processes with the high thermal efficiency typical of micro-fluidics, it is possible to produce effective thermal management devices that are well adapted to different detector configurations. The production of very thin cooling devices in silicon enables a minimization of material of the tracking sensors and eliminates mechanical stresses due to the mismatch of the coefficient of thermal expansion between detectors and cooling systems. The NA62 experiment at CERN will be the first high particle physics experiment that will install a micro-cooling system to perform the thermal management of the three detection planes of its Gigatracker pixel detector.

  7. The kinetics and properties of thermal oxidation of silicon in TCA-O/sub 2/

    International Nuclear Information System (INIS)

    Ahmed, W.; Ahmed, E.

    1993-01-01

    The oxidation of silicon using dry O/sub 2/ is now well established as a key process for the fabrication of electronic devices in the semiconductor industry. However, this process is complicated by its sensitivity to impurities which reduce device yields. HCl can be added to O/sub 2/ to remove these impurities but due to its highly corrosive nature a safer and cleaner alternative such as trichloroethane (TCA) is desirable. In this paper, the thermal oxidation of silicon using a mixture of TCA-O/sub 2/ has been investigated in a large scale industrial system. The growth kinetics and the properties of these films have been studies and compared to oxides produced from dry 2. The addition of TCA generates HCl in situ, enhances the oxidation rate by approximately 54% nd improves the electrical properties. It was found that a 1 mol.% mixture gives the optimum process. An analysis of the data suggests that a liner parabolic growth model is applicable and provides a valuable insight into the physical phenomena governing this important process. (author)

  8. Positron Source from Betatron X-rays Emitted in a Plasma Wiggler

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, D.K.; Clayton, C.E.; Huang, C.; Joshi, C.; Lu, W.; Marsh, K.A.; Mori, W.B.; Zhou, M.; /UCLA; Barnes, C.D.; Decker, F.J.; Hogan, M.J.; Iverson, R.H.; Krejcik, P.; O' Connell, C.L.; Siemann, R.; Walz, D.R.; /SLAC; Deng, S.; Katsouleas, T.C.; Muggli, P.; Oz, E.; /Southern California U.

    2006-04-21

    In the E-167 plasma wakefield accelerator (PWFA) experiments in the Final Focus Test Beam (FFTB) at the Stanford Linear Accelerator Center (SLAC), an ultra-short, 28.5 GeV electron beam field ionizes a neutral column of Lithium vapor. In the underdense regime, all plasma electrons are expelled creating an ion column. The beam electrons undergo multiple betatron oscillations leading to a large flux of broadband synchrotron radiation. With a plasma density of 3 x 10{sup 17}cm{sup -3}, the effective focusing gradient is near 9 MT/m with critical photon energies exceeding 50 MeV for on-axis radiation. A positron source is the initial application being explored for these X-rays, as photo-production of positrons eliminates many of the thermal stress and shock wave issues associated with traditional Bremsstrahlung sources. Photo-production of positrons has been well-studied; however, the brightness of plasma X-ray sources provides certain advantages. In this paper, we present results of the simulated radiation spectra for the E-167 experiments, and compute the expected positron yield.

  9. Investigation of positron moderator materials for electron-linac-based slow positron beamlines

    International Nuclear Information System (INIS)

    Suzuki, Ryoichi; Ohdaira, Toshiyuki; Uedono, Akira

    1998-01-01

    Positron re-emission properties were studied on moderator materials in order to improve the positron moderation system of electron-linac-based intense slow positron beamlines. The re-emitted positron fraction was measured on tungsten, SiC, GaN, SrTiO 3 , and hydrogen-terminated Si with a variable-energy pulsed positron beam. The results suggested that tungsten is the best material for the primary moderator of the positron beamlines while epitaxially grown n-type 6H-SiC is the best material for the secondary moderator. Defect characterization by monoenergetic positron beams and surface characterization by Auger electron spectroscopy were carried out to clarify the mechanism of tungsten moderator degradation induced by high-energy electron irradiation. The characterization experiments revealed that the degradation is due to both radiation-induced vacancy clusters and surface carbon impurities. For the restoration of degraded tungsten moderators, oxygen treatment at ∼900degC is effective. Furthermore, it was found that oxygen at the tungsten surface inhibits positronium formation; as a result, it can increase the positron re-emission fraction. (author)

  10. Mechanical engineering and design of silicon-based particle tracking devices

    International Nuclear Information System (INIS)

    Miller, W.O.; Thompson, T.C.; Gamble, M.T.; Reid, R.S.; Woloshun, K.A.; Dransfield, G.D.; Ziock, H.J.

    1990-01-01

    The Mechanical Engineering and Electronics Division of the Los Alamos National Laboratory has been investigating silicon-based particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, thermal, and materials issues have been addressed. This paper discussed detector structural integrity and stability, including detailed finite element models of the silicon chip support and predictive methods used in designing with advanced composite materials. Electronic thermal loading and efficient dissipation of such energy using heat pipe technology has been investigated. The use of materials whose coefficients of thermal expansion are engineered to match silicon or to be near zero, as appropriate, have been explored. Material analysis and test results from radiation, chemical, and static loading are compared with analytical predictions and discussed. 1 ref., 2 figs., 1 tab

  11. Positron annihilation studies of the AlOx/SiO2/Si interface in solar cell structures

    International Nuclear Information System (INIS)

    Edwardson, C. J.; Coleman, P. G.; Li, T.-T. A.; Cuevas, A.; Ruffell, S.

    2012-01-01

    Film and film/substrate interface characteristics of 30 and 60 nm-thick AlO x films grown on Si substrates by thermal atomic layer deposition (ALD), and 30 nm-thick AlO x films by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlO x /SiO x /Si interface with positron trapping and annihilation occurring in the Si side of the SiO x /Si boundary. An induced positive charge in the Si next to the interface reduces diffusion into the oxides and increases annihilation in the Si. In this region there is a divacancy-type response (20 ± 2%) before annealing which is increased to 47 ± 2% after annealing. Sputtering seems to not produce samples with this same electrostatic shielding; instead, positron trapping occurs directly in the SiO x interface in the as-deposited sample, and the positron response to it increases after annealing as an SiO 2 layer is formed. Annealing the film has the effect of lowering the film oxygen response in all film types. Compared to other structural characterization techniques, VEPAS shows larger sensitivity to differences in film preparation method and between as-deposited and annealed samples.

  12. Helium implanted Eurofer97 characterized by positron beam Doppler broadening and Thermal Desorption Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Carvalho, I., E-mail: i.carvalho@m2i.nl [Materials Innovation Institute (M2i), Delft (Netherlands); Schut, H. [Delft University of Technology, Faculty of Applied Sciences, Delft (Netherlands); Fedorov, A.; Luzginova, N. [Nuclear Research and Consultancy Group (NRG), Petten (Netherlands); Desgardin, P. [CEMHTI-CNRS, 3A Rue de la Férolerie, 45071 Orléans Cedex (France); Sietsma, J. [Delft University of Technology, Faculty of Mechanical, Maritime and Materials Engineering, Delft (Netherlands)

    2013-11-15

    Reduced Activation Ferritic/Martensitic steels are being extensively studied because of their foreseen application in fusion and Generation IV fission reactors. To produce irradiation induced defects, Eurofer97 samples were implanted with helium at energies of 500 keV and 2 MeV and doses of 1 × 10{sup 15}–10{sup 16} He/cm{sup 2}, creating atomic displacements in the range 0.07–0.08 dpa. The implantation induced defects were characterized by positron beam Doppler Broadening (DB) and Thermal Desorption Spectroscopy (TDS). Results show that up to ∼600 K peaks that can be attributed to He desorption from overpressured He{sub n}V{sub m} (n > m) clusters and vacancy assisted mechanism in the case of helium in the substitutional position. The temperature range 600–1200 K is related to the formation of larger clusters He{sub n}V{sub m} (n < m). The dissociation of the HeV and the phase transition attributed to a sharp peak in the TDS spectra at 1200 K. Above this temperature, the release of helium from bubbles is observed.

  13. Positron astrophysics and areas of relation to low-energy positron physics

    Science.gov (United States)

    Guessoum, Nidhal

    2014-05-01

    I briefly review our general knowledge of positron astrophysics, focusing mostly on the theoretical and modelling aspects. The experimental/observational aspects of the topic have recently been reviewed elsewhere [E. Churazov et al., Mon. Nat. R. Astron. Soc. 411, 1727 (2011); N. Prantazos et al., Rev. Mod. Phys. 83, 1001 (2011)]. In particular, I highlight the interactions and cross sections of the reactions that the positrons undergo in various cosmic media. Indeed, these must be of high interest to both the positron astrophysics community and the low-energy positron physics community in trying to find common areas of potential collaboration for the future or areas of research that will help the astrophysics community make further progress on the problem. The processes undergone by positrons from the moments of their birth to their annihilation (in the interstellar medium or other locations) are thus examined. The physics of the positron interactions with gases and solids (dust grains) and the physical conditions and characteristics of the environments where the processes of energy loss, positronium formation, and annihilation take place, are briefly reviewed. An explanation is given about how all the relevant physical information is taken into account in order to calculate annihilation rates and spectra of the 511 keV emission in the ISM; special attention is paid to positron interactions with dust and with polycyclic aromatic hydrocarbons. In particular, an attempt is made to show to what extent the interactions between positrons and interstellar dust grains are similar to laboratory experiments in which beams of low-energy positrons impinge upon solids and surfaces. Sample results are shown for the effect of dust grains on positron annihilation spectra in some phases of the ISM which, together with high resolution spectra measured by satellites, can be used to infer useful knowledge about the environment where the annihilation is predominantly taking place

  14. Positron-atom collisions

    International Nuclear Information System (INIS)

    Drachman, R.J.

    1984-01-01

    The past decade has seen the field of positron-atom collisions mature into an important sub-field of atomic physics. Increasingly intense positron sources are leading towards a situation in which electron and positron collision experiments will be on almost an equal footing, challenging theory to analyze their similarities and differences. The author reviews the advances made in theory, including dispersion theory, resonances, and inelastic processes. A survey of experimental progress and a brief discussion of astrophysical positronics is also included. (Auth.)

  15. Positron astrophysics and areas of relation to low-energy positron physics

    International Nuclear Information System (INIS)

    Guessoum, N.

    2014-01-01

    I briefly review our general knowledge of positron astrophysics, focusing mostly on the theoretical and modelling aspects. The experimental/observational aspects of the topic have recently been reviewed elsewhere [E. Churazov et al., Mon. Nat. R. Astron. Soc. 411, 1727 (2011); N. Prantazos et al., Rev. Mod. Phys. 83, 1001 (2011)]. In particular, I highlight the interactions and cross sections of the reactions that the positrons undergo in various cosmic media. Indeed, these must be of high interest to both the positron astrophysics community and the low-energy positron physics community in trying to find common areas of potential collaboration for the future or areas of research that will help the astrophysics community make further progress on the problem. The processes undergone by positrons from the moments of their birth to their annihilation (in the interstellar medium or other locations) are thus examined. The physics of the positron interactions with gases and solids (dust grains) and the physical conditions and characteristics of the environments where the processes of energy loss, positronium formation, and annihilation take place, are briefly reviewed. An explanation is given about how all the relevant physical information is taken into account in order to calculate annihilation rates and spectra of the 511 keV emission in the ISM; special attention is paid to positron interactions with dust and with polycyclic aromatic hydrocarbons. In particular, an attempt is made to show to what extent the interactions between positrons and interstellar dust grains are similar to laboratory experiments in which beams of low-energy positrons impinge upon solids and surfaces. Sample results are shown for the effect of dust grains on positron annihilation spectra in some phases of the ISM which, together with high resolution spectra measured by satellites, can be used to infer useful knowledge about the environment where the annihilation is predominantly taking place

  16. Study on grown-in defects in CZ-Si by positron annihilation

    International Nuclear Information System (INIS)

    Nakagawa, S.; Hori, F.; Oshima, R.

    2004-01-01

    In order to study the nature of grown-in microdefects of a silicon wafer taken from a czochralski-grown single crystal (CZ-Si) in which ring oxidation-induced stacking faults (ring-OSF) are formed after oxidation heat treatment, positron annihilation coincidence Doppler broadening experiments (CDB) have been performed. Vacancy-type defects were detected in the central region of a wafer of an as-grown crystal, and they were changed with annealing. It was confirmed that different types of defects were formed in the regions of outside and inside of the ring-OSF. (orig.)

  17. Study on efficiency of multi-wire tungsten moderator for slow positron source on SPring-8 hard synchrotron radiation

    International Nuclear Information System (INIS)

    Plokhoi, Vladimir; Kandiev, Yadgar; Samarin, Sergey; Malyshkin, Gennady; Baidin, Grigory; Litvinenko, Igor; Nikitin, Valery

    1999-01-01

    The paper provides results of numeric simulations of in-target positron production process, processes of moderation, thermalization, diffusion, and reemission of positrons in high efficiency multi-wire moderator made of tungsten monocrystalline wire with regular wire spacing. The paper looks into dynamics of slow positrons in the moderator's vacuum gaps taking into account of external fields. The possibility for using multi-wire moderator with non-regular structure - multi-layer w ire felt m oderator is discussed. According to maximal estimate the multi-wire moderators can reach very high efficiency of fast-slow positron transformation ∼ 10 -2 . Using such moderator the intensity of slow positron source on hard synchrotron radiation of Spring-8 can reach the level of ∼10 11 e + /s. (author)

  18. Thermal and hydrodynamic studies for micro-channel cooling for large area silicon sensors in high energy physics experiments

    Energy Technology Data Exchange (ETDEWEB)

    Flaschel, Nils; Ariza, Dario; Diez, Sergio; Gregor, Ingrid-Maria; Tackmann, Kerstin [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Gerboles, Marta; Jorda, Xavier; Mas, Roser; Quirion, David; Ullan, Miguel [Centro Nacional de Microelectronica, Barcelona (Spain)

    2017-01-15

    Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today's prospects of micro-fabricating silicon opens a door to a more direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. In this paper, we are investigating micro-channel cooling as a candidate for a future cooling system for silicon detectors in a generic research and development approach. The work presented in this paper includes the production and the hydrodynamic and thermal testing of a micro-channel equipped prototype optimized to achieve a homogeneous flow distribution. Furthermore, the device was simulated using finite element methods.

  19. Thermal and hydrodynamic studies for micro-channel cooling for large area silicon sensors in high energy physics experiments

    International Nuclear Information System (INIS)

    Flaschel, Nils; Ariza, Dario; Diez, Sergio; Gregor, Ingrid-Maria; Tackmann, Kerstin; Gerboles, Marta; Jorda, Xavier; Mas, Roser; Quirion, David; Ullan, Miguel

    2017-01-01

    Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today's prospects of micro-fabricating silicon opens a door to a more direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. In this paper, we are investigating micro-channel cooling as a candidate for a future cooling system for silicon detectors in a generic research and development approach. The work presented in this paper includes the production and the hydrodynamic and thermal testing of a micro-channel equipped prototype optimized to achieve a homogeneous flow distribution. Furthermore, the device was simulated using finite element methods.

  20. Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

    Science.gov (United States)

    Singh, M.; Behrendt, D. R.

    1992-01-01

    Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

  1. Positrons and positronium

    International Nuclear Information System (INIS)

    Jean, Y.C.; Lambrecht, R.M.

    1988-01-01

    This bibliography includes articles, proceedings, abstracts, reports and patents published between 1930 and 1984 on the subject of positrons, positron annihilation and positronium. The subject covers experimental and theoretical results in the areas of physics and chemistry of low and intermediate energy (< 0.6 MeV) positrons and positronium. The topics of interest are: fundamental properties, interactions with matter, nuclear technology, the history and philosophy of antimatter, the theory of the universe, and the applications of positrons in the chemical, physical, and biomedical sciences

  2. Positrons annihilation and the Galactic center

    International Nuclear Information System (INIS)

    Wallyn, Pierre

    1992-01-01

    The Galactic center has been observed in gamma rays, many times since more than two decades and we do not still have a full comprehensive picture of this region. It is fairly well established that the 511 keV annihilation line has two origins: a steady diffuse emission, which follows more or less the type I supernovae distribution along the Galactic plane and a variable emission coming from the positrons emitted by (at least) one compact object and annihilating in a nearby cold molecular cloud. We present here an analysis of the profiles and intensifies of the 511 keV annihilation line observed in the direction of the Galactic center. We find that a warm medium (temperature of 8000 K) can describe the annihilation of positrons from the diffuse component of the line. The high state observations of the 511 keV line can be explained if the time-variable component is coming from the annihilation of the positrons in a cold medium (temperature around 80 K). This constraint on the annihilation medium temperature supports the association with the molecular cloud G-0.86-0.08 in the direction of 1E1740.7-2942. On may 22, 1989, HEXAGONE detected a narrow 511 keV line and also a broad emission around 170 keV in the direction of the Galactic center. Two weeks before, EXITE observed in the same direction a new transient source EXS 1737.9-2952 which showed a bump around 102 keV. We propose a simple semi-quantitative model which can mimic the bumps as well as its time variations and emphasize the strong similarities between EXS1737.9-2952 and Nova Muscae. We study the behaviour of positron annihilation by charge exchange in the cold phase of the interstellar medium. We calculate formula for the slowing-down time before thermalization of positrons of a given initial energy, for different medium densities. Our scenario explains the lack of detection of the recombination lines from positronium and gives new constraints on their possible observation. (author) [fr

  3. Superconducting Super Collider silicon tracking subsystem research and development

    International Nuclear Information System (INIS)

    Miller, W.O.; Thompson, T.C.; Ziock, H.J.; Gamble, M.T.

    1990-12-01

    The Alamos National Laboratory Mechanical Engineering and Electronics Division has been investigating silicon-based elementary particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, materials, and thermal issues have been addressed. This paper explores detector structural integrity and stability, including detailed finite element models of the silicon wafer support and predictive methods used in designing with advanced composite materials. The current design comprises a magnesium metal matrix composite (MMC) truss space frame to provide a sparse support structure for the complex array of silicon detectors. This design satisfies the 25-μm structural stability requirement in a 10-Mrad radiation environment. This stability is achieved without exceeding the stringent particle interaction constraints set at 2.5% of a radiation length. Materials studies have considered thermal expansion, elastic modulus, resistance to radiation and chemicals, and manufacturability of numerous candidate materials. Based on optimization of these parameters, the MMC space frame will possess a coefficient of thermal expansion (CTE) near zero to avoid thermally induced distortions, whereas the cooling rings, which support the silicon detectors and heat pipe network, will probably be constructed of a graphite/epoxy composite whose CTE is engineered to match that of silicon. Results from radiation, chemical, and static loading tests are compared with analytical predictions and discussed. Electronic thermal loading and its efficient dissipation using heat pipe cooling technology are discussed. Calculations and preliminary designs for a sprayed-on graphite wick structure are presented. A hydrocarbon such as butane appears to be a superior choice of heat pipe working fluid based on cooling, handling, and safety criteria

  4. The proposed INEL intense slow positron source, beam line, and positron microscope facility

    International Nuclear Information System (INIS)

    Makowitz, H.; Denison, A.B.; Brown, B.

    1993-01-01

    A program is currently underway at the Idaho National Engineering Laboratory (INEL) to design and construct an Intense Slow Positron Beam Facility with an associated Positron Microscope. Positron beams have been shown to be valuable research tools and have potential application in industrial processing and nondestructive evaluation (microelectronics, etc.). The limit of resolution or overall usefulness of the technique has been limited because of lack of sufficient intensity. The goal of the INEL positron beam is ≥ 10 12 slow e+/s over a 0.03 cm diameter which represents a 10 3 to 10 4 advancement in beam current over existing beam facilities. The INEL is an ideal site for such a facility because of the nuclear reactors capable of producing intense positron sources and the personnel and facilities capable of handling high levels of radioactivity. A design using 58 Co with moderators and remoderators in conjunction with electrostatic positron beam optics has been reached after numerous computer code studies. Proof-of-principle electron tests have demonstrated the feasibility of the large area source focusing optics. The positron microscope development is occurring in conjunction with the University of Michigan positron microscope group. Such a Beam Facility and associated Intense Slow Positron Source (ISPS) can also be utilized for the generation and study of positron, and positron electron plasmas at ≤ 10 14 particles/cm 3 with plasma temperatures ranging from an eV to many keV, as well as an intense x-ray source via positron channeling radiation. The possibility of a tunable x-ray laser based on channeling positron radiation also exists. In this discussion the authors will present a progress report on various activities associated with the INEL ISPS

  5. Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

    Directory of Open Access Journals (Sweden)

    Neha Batra

    2015-06-01

    Full Text Available The effect of deposition temperature (Tdep and subsequent annealing time (tanl of atomic layer deposited aluminum oxide (Al2O3 films on silicon surface passivation (in terms of surface recombination velocity, SRV is investigated. The pristine samples (as-deposited show presence of positive fixed charges, QF. The interface defect density (Dit decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min.

  6. Transmutation doping of silicon solar cells

    Science.gov (United States)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  7. Positron emission tomography

    International Nuclear Information System (INIS)

    Reivich, M.; Alavi, A.

    1985-01-01

    This book contains 24 selections. Some of the titles are: Positron Emission Tomography Instrumentation, Generator Systems for Positron Emitters, Reconstruction Algorithms, Cerebral Glucose Consumption: Methodology and Validation, Cerebral Blood Flow Tomography Using Xenon-133 Inhalation: Methods and Clinical Applications, PET Studies of Stroke, Cardiac Positron Emission Tomography, and Use of PET in Oncology

  8. Silicon wafers for integrated circuit process

    OpenAIRE

    Leroy , B.

    1986-01-01

    Silicon as a substrate material will continue to dominate the market of integrated circuits for many years. We first review how crystal pulling procedures impact the quality of silicon. We then investigate how thermal treatments affect the behaviour of oxygen and carbon, and how, as a result, the quality of silicon wafers evolves. Gettering techniques are then presented. We conclude by detailing the requirements that wafers must satisfy at the incoming inspection.

  9. Cardiac positron emission tomography

    International Nuclear Information System (INIS)

    Eftekhari, M.; Ejmalian, G.

    2003-01-01

    Positron emission tomography is an intrinsically tool that provide a unique and unparalleled approach for clinicians and researchers to interrogate the heart noninvasively. The ability to label substances of physiological interest with positron-emitting radioisotopes has permitted insight into normal blood flow and metabolism and the alterations that occur with disease states. Positron emission tomography of the heart has evolved as a unique, noninvasive approach for the assessment of myocardial perfusion, metabolism, and function. Because of the intrinsic quantitative nature of positron emission tomography measurements as well as the diverse compounds that can be labeled with positron- emitting radioisotopes, studies with positron emission tomography have provided rich insight into the physiology of the heart under diverse conditions

  10. Reflectance improvement by thermal annealing of sputtered Ag/ZnO back reflectors in a-Si:H thin film silicon solar cells

    DEFF Research Database (Denmark)

    Haug, Franz-Josef; Söderström, Karin; Pahud, Céline

    2011-01-01

    Silver can be used as the back contact and reflector in thin film silicon solar cells. When deposited on textured substrates, silver films often exhibit reduced reflectance due to absorption losses by the excitation of surface plasmon resonances. We show that thermal annealing of the silver back...

  11. Atomic-layer deposition of silicon nitride

    CERN Document Server

    Yokoyama, S; Ooba, K

    1999-01-01

    Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

  12. BEPC II positron source

    International Nuclear Information System (INIS)

    Pei Guoxi; Sun Yaolin; Liu Jintong; Chi Yunlong; Liu Yucheng; Liu Nianzong

    2006-01-01

    BEPC II-an upgrade project of the Beijing Electron Positron Collider (BEPC) is a factory type of e + e - collider. The fundamental requirements for its injector linac are the beam energy of 1.89 GeV for on-energy injection and a 40 mA positron beam current at the linac end with a low beam emittance of 1.6 μm and a low energy spread of ±0.5% so as to guarantee a higher injection rate (≥50 mA/min) to the storage ring. Since the positron flux is proportional to the primary electron beam power on the target, the authors will increase the electron gun current from 4A to 10A by using a new electron gun system and increase the primary electron energy from 120 MeV to 240 MeV. The positron source itself is an extremely important system for producing more positrons, including a positron converter target chamber, a 12kA flux modulator, the 7m focusing module with DC power supplies and the support. The new positron production linac from the electron gun to the positron source has been installed into the tunnel. In what follows, the authors will emphasize the positron source design, manufacture and tests. (authors)

  13. Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation

    Science.gov (United States)

    Veirman, J.; Dubois, S.; Enjalbert, N.; Garandet, J. P.; Heslinga, D. R.; Lemiti, M.

    2010-06-01

    This letter focuses on the variation of the Hall majority carrier mobility with the dopant compensation level in purely Boron-doped Czochralski grown silicon single crystals. Compensation was varied continuously at the sample scale via a step by step activation of the oxygen-based thermal donors. At room temperature, we show a strong drop in mobility for high compensation levels in both p- and n-type Si. Mobility models taking into account carrier scattering on ionized impurities and phonons could not reproduce this drop. We conclude that a specific effect of compensation must be taken into account to explain the observed behaviour. We qualitatively discuss physical mechanisms susceptible to reduce mobility in highly compensated Si.

  14. Numerical analysis of thermal stress and dislocation density distributions in large size multi-crystalline silicon ingots during the seeded growth process

    Science.gov (United States)

    Nguyen, Thi Hoai Thu; Chen, Jyh-Chen; Hu, Chieh; Chen, Chun-Hung; Huang, Yen-Hao; Lin, Huang-Wei; Yu, Andy; Hsu, Bruce

    2017-06-01

    In this study, a global transient numerical simulation of silicon growth from the beginning of the solidification process until the end of the cooling process is carried out modeling the growth of an 800 kg ingot in an industrial seeded directional solidification furnace. The standard furnace is modified by the addition of insulating blocks in the hot zone. The simulation results show that there is a significant decrease in the thermal stress and dislocation density in the modified model as compared to the standard one (a maximal decrease of 23% and 75% along the center line of ingot for thermal stress and dislocation density, respectively). This modification reduces the heating power consumption for solidification of the silicon melt by about 17% and shortens the growth time by about 2.5 h. Moreover, it is found that adjusting the operating conditions of modified model to obtain the lower growth rate during the early stages of the solidification process can lower dislocation density and total heater power.

  15. Positron annihilation studies on bulk metallic glass and high intensity positron beam developments

    International Nuclear Information System (INIS)

    Asoka-Kumar, P.; Stoeffl, W.

    2003-01-01

    Positron annihilation spectroscopy is an ideal probe to examine atomic scale open-volume regions in materials. Below, we summarize the recent results on studies of open-volume regions of a multicomponent Zr-Ti-Ni-Cu-Be bulk metallic glass. Our studies establish two types of open-volume regions, one group that is too shallow to trap positrons at room temperature and becomes effective only at low temperatures and the other group that localizes positrons at room temperature and is large enough to accommodate hydrogen. The second half of the paper will concentrate on the high intensity positron program at Lawrence Livermore National Laboratory. A new positron production target is under development and we are constructing two experimental end stations to accommodate a pulsed positron microprobe and an experiment on positron diffraction and holography. Important design considerations of these experiments will be described. (author)

  16. Silicon drift detector based X-ray spectroscopy diagnostic system for the study of non-thermal electrons at Aditya tokamak.

    Science.gov (United States)

    Purohit, S; Joisa, Y S; Raval, J V; Ghosh, J; Tanna, R; Shukla, B K; Bhatt, S B

    2014-11-01

    Silicon drift detector based X-ray spectrometer diagnostic was developed to study the non-thermal electron for Aditya tokamak plasma. The diagnostic was mounted on a radial mid plane port at the Aditya. The objective of diagnostic includes the estimation of the non-thermal electron temperature for the ohmically heated plasma. Bi-Maxwellian plasma model was adopted for the temperature estimation. Along with that the study of high Z impurity line radiation from the ECR pre-ionization experiments was also aimed. The performance and first experimental results from the new X-ray spectrometer system are presented.

  17. Effect of vulcanization temperature and humidity on the properties of RTV silicone rubber

    Science.gov (United States)

    Wu, Xutao; Li, Xiuguang; Hao, Lu; Wen, Xishan; Lan, Lei; Yuan, Xiaoqing; Zhang, Qingping

    2017-06-01

    In order to study the difference in performance of room temperature vulcanized (RTV) silicone rubber in vulcanization environment with different temperature and humidity, static contact angle method, FTIR and TG is utilized to depict the properties of hydrophobicity, transfer of hydrophobicity, functional groups and thermal stability of RTV silicone rubber. It is found that different vulcanization conditions have effects on the characteristics of RTV silicone rubber, which shows that the hydrophobicity of RTV silicone rubber changes little with the vulcanization temperature but a slight increase with the vulcanization humidity. Temperature and humidity have obvious effects on the hydrophobicity transfer ability of RTV silicone rubber, which is better when vulcanization temperature is 5°C or vulcanization humidity is 95%. From the Fourier transform infrared spectroscopy, it can be concluded that humidity and temperature of vulcanization conditions have great effect on the functional groups of silicone rubber, and vulcanization conditions also have effect on thermal stability of RTV silicone rubber. When vulcanization temperature is 5°C or vulcanization humidity is 15% or 95%, the thermal stability of silicone rubber becomes worse.

  18. Positron annihilation at defects in sintered high Tc perovskite superconductors

    International Nuclear Information System (INIS)

    Corbel, C.; Bernede, P.; Pascard, H.; Rullier-Albenque, F.; Kormann, R.; Marucco, J.F.

    1988-01-01

    We report positron lifetime measurements in sintered superconducting YBa 2 Cu 3 O 7-x and GdBa 2 Cu 3 O 7-x oxides. It is shown that the thermal behaviour of the positron lifetime spectra strongly depends on the preparation of the ceramics. A lifetime of 190±3 ps is attributed to oxygen deficient regions. Two lifetimes of 251±7 ps and 225±5 ps are attributed to a cation vacancy presenting a temperature dependent atomic arrangement. The lifetime transition (251 → 225 ps) occurs during decreases in temperature across the resistivity superconducting transition. This lifetime change indicates that the volume of the cation vacancy decreases in the superconducting state

  19. On the average luminosity of electron positron collider and positron-producing energy

    International Nuclear Information System (INIS)

    Xie Jialin

    1985-01-01

    In this paper, the average luminosity of linac injected electron positron collider is investigated from the positron-producing energy point of view. When the energy of the linac injector is fixed to be less than the operating energy of the storage ring, it has been found that there exists a positron-producing energy to give optimum average luminosity. Two cases have been studied, one for an ideal storage ring with no single-beam instability and the other for practical storage ring with fast head-tail instability. The result indicates that there is a positron-producing energy corresponding to the minimum injection time, but this does not correspond to the optimum average luminosity for the practical storage rings. For Beijing Electron Positron Collider (BEPC), the positron-producing energy corresponding to the optimum average luminosity is about one tenth of the total injector energy

  20. Design, simulation and fabrication of a flexible bond pad with a hollow annular protuberance to improve the thermal fatigue lifetime for through-silicon vias

    International Nuclear Information System (INIS)

    Wang, Guilian; Ding, Guifu; Luo, Jiangbo; Niu, Di; Zhao, Junhong; Zhao, Xiaolin; Wang, Yan; Liu, Rui

    2014-01-01

    This paper presents a flexible bond pad (FBP) with a hollow annular protuberance to improve the thermal fatigue lifetime for its application to through-silicon vias (TSVs). The hollow annular protuberance structure across the interface between the filled copper in TSV and silicon substrate not only isolates the FBP from stress/strain concentration regions (the corners of the TSV) but also disperses TSV-induced deformation. The plastic strain distributions of the FBP and conventional plate-type bond pad (CPBP) were simulated by finite element method (FEM) under the temperature cycles. Based on the simulation results, the thermal fatigue lifetimes of the CPBP and the FBP with different TSV diameters were predicted by the Coffin–Manson equation. The results indicate that thermal fatigue lifetimes of the FBP are significantly greater than those of the CPBP and their fatigue lifetimes both decrease with the increase of TSV diameter. To examine the reliability of the predicted results, the CPBP and the FBP with TSV diameter of 100 µm were fabricated by MEMS technology and temperature cycling tests (TCTs) were performed to obtain their thermal fatigue lifetimes. The test results are in good agreement with the numerical simulation results, and it shows that the proposed FBP can effectively improve the thermal fatigue lifetime for TSVs. (paper)

  1. Silicon Effects on Properties of Melt Infiltrated SiC/SiC Composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Gyekenyesi, John Z.; Hurst, Janet B.

    2000-01-01

    Silicon effects on tensile and creep properties, and thermal conductivity of Hi-Nicalon SiC/SiC composites have been investigated. The composites consist of 8 layers of 5HS 2-D woven preforms of BN/SiC coated Hi-Nicalon fiber mats and a silicon matrix, or a mixture of silicon matrix and SiC particles. The Hi-Nicalon SiC/silicon and Hi-Nicalon SiC/SiC composites contained about 24 and 13 vol% silicon, respectively. Results indicate residual silicon up to 24 vol% has no significant effect on creep and thermal conductivity, but does decrease the primary elastic modulus and stress corresponding to deviation from linear stress-strain behavior.

  2. Low cost silicon solar array project large area silicon sheet task: Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

    1977-01-01

    Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

  3. Development of analog solid-state photo-detectors for Positron Emission Tomography

    International Nuclear Information System (INIS)

    Bisogni, Maria Giuseppina; Morrocchi, Matteo

    2016-01-01

    Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

  4. Development of analog solid-state photo-detectors for Positron Emission Tomography

    Energy Technology Data Exchange (ETDEWEB)

    Bisogni, Maria Giuseppina, E-mail: giuseppina.bisogni@pi.infn.it; Morrocchi, Matteo

    2016-02-11

    Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

  5. Positron emission tomography

    International Nuclear Information System (INIS)

    Paans, A.M.J.

    1981-01-01

    Positron emitting radiopharmaceuticals have special applications in in-vivo studies of biochemical processes. The combination of a cyclotron for the production of radionuclides and a positron emission tomograph for the registration of the distribution of radioactivity in the body enables the measurement of local radioactivity concentration in tissues, and opens up new possibilities in the diagnosis and examination of abnormalities in the metabolism. The principles and procedures of positron emission tomography are described and the necessary apparatus considered, with emphasis on the positron camera. The first clinical applications using 55 Co bloemycine for tumor detection are presented. (C.F.)

  6. Characterizing microstructural changes in ferritic steels by positron annihilation spectroscopy: Studies on modified 9Cr-1Mo steel

    Energy Technology Data Exchange (ETDEWEB)

    Hari Babu, S., E-mail: shb@igcar.gov.in [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, TN (India); Rajkumar, K.V. [Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, TN (India); Hussain, S. [UGC-DAE CSR, Kokilamedu 603 104, TN (India); Amarendra, G.; Sundar, C.S. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, TN (India); Jayakumar, T. [Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, TN (India)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer Positron lifetime technique probing microstructure of ferritic/martensitic steels. Black-Right-Pointing-Pointer Correlation between positron lifetime, ultrasonic and hardness. Black-Right-Pointing-Pointer Complementary nature of positron annihilation spectroscopy in probing defects. Black-Right-Pointing-Pointer Distinguishing precipitation stages by positron annihilation spectroscopy. - Abstract: Applicability of positron annihilation spectroscopy in probing the microstructural changes in ferritic steels has been investigated with thermal treatment studies on modified 9Cr-1Mo steel, during 300-1273 K. Positron lifetime results are compared with those of ultrasonic velocity and hardness techniques with two initial microstructural conditions i.e., normalized and tempered condition as well as only normalized condition. In first case, positron lifetime is found to be sensitive to small changes in metal carbide precipitation which could not be probed by other two techniques. In later case, positron lifetime is found to be sensitive to defect annealing until 673 K and in distinguishing the growth and coarsening of metal carbide precipitation stages during 773-1073 K. The present study suggests that by combining positron lifetime, ultrasonic velocity and hardness measurements, it is possible to distinguish distinct microstructures occurring at different stages.

  7. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  8. Model-independent requirements to the source of positrons in the galactic centre

    International Nuclear Information System (INIS)

    Aharonyan, F.A.

    1986-01-01

    The main requirements, following from the observational data in a wide range of electromagnetic waves, to positron source in the galactic centre are formulated. The most probable mechanism providing an efficiency of positron production of 10% is the pair production at photon-photon collisions. This mechanism can be realized a) in a thermal e + e - pair-dominated weak-relativistic plasma and b) at the development of a nonthermal electromagnetic cascade initiated by relativistic particles in the field of X-rays. Gamma-astronomical observations in the region of E γ ≥ 10 11 eV can be crucial in the choice of the model

  9. New techniques of positron annihilation

    International Nuclear Information System (INIS)

    1983-02-01

    Studies on new techniques of positron annihilation and its application to various fields are presented. First, production of slow positron and its characteristic features are described. The slow positron can be obtained from radioisotopes by using a positron moderator, proton beam bombardment on a boron target, and pair production by using an electron linear accelerator. Bright enhancement of the slow positron beam is studied. Polarized positron beam can be used for the study of the momentum distribution of an electron in ferromagnetic substances. Production of polarized positrons and measurements of polarization are discussed. Various phases of interaction between slow positrons and atoms (or molecules) are described. A comparative study of electron scavenging effects on luminescence and on positronium formation in cyclohexane is presented. The positron annihilation phenomena are applicable for the surface study. The microscopic information on the surface of porous material may be obtained. The slow positrons are also useful for the surface study. Production and application of slow muon (positive and negative) are presented in this report. (Kato, T.)

  10. Annihilation of positrons with the electrons of chemical bonds of the superconducting CuO-polyhedrons in the HTSC materials

    International Nuclear Information System (INIS)

    Arutyunov, N.Yu.; Trashchakov, V.Yu.

    1989-01-01

    Angular distribution parameters of annihilation photon pairs emitted from R-Ba 2 Cu 3 O 7-x (x≤0.2; R=Y, Nd, Lu) specimens after injection and subsequent annihilation of positrons in them. It is shown that annihilation of thermalized positrons proceeds advantageously with electrons of chemical bonds of O(4)-Cu(I)-O(I) polyhedrons in R-Ba-Cu-O oxides. In an orthorhombic phase positrons are mostly delocalized in rows of ordered stoichiometric vacancies. The result obtained provides to recommend the methods of positron diagnostics for studying parameters of electron state density in superconducting structural groups of high-temperature superconductors. 2 refs.; 1 fig

  11. Solvated Positron Chemistry - Positron Reactions with Pseudo-Halide Ions in Water

    DEFF Research Database (Denmark)

    Mogensen, O. E.; Pedersen, Niels Jørgen; Andersen, Jan Rud

    1982-01-01

    The hydrated positron e+aq reactions with SCN−, OCN−, CN−, S2− were studied by means of the angular correlation technique. The positron forms bound states with SCN−, CN−, and S2− but not with OCN−. Apparently, the e+aq reaction with SH− results in a positron bound state with S2−. It was difficult...

  12. Nanoscopic properties of silica filled polydimethylsiloxane by means of positron annihilation lifetime spectroscopy

    DEFF Research Database (Denmark)

    Wiinberg, P.; Eldrup, Morten Mostgaard; Maurer, F.H.J.

    2004-01-01

    and the positron annihilation characteristics. The glass transition behavior of the PDMS/SiO2 composites was determined with differential scanning calorimetry. A clear influence on the o-Ps lifetime (73) in the polymer upon addition of nano-sized fumed SiO2 was observed at all temperatures. The observed o......Positron annihilation lifetime spectroscopy (PALS) was performed on a series of polydimethylsiloxane (PDMS)/fumed silicon dioxide (SiO2) composites at temperatures between -185 and 100degreesC to study the effect of filler content and filler particle size on the free volume properties...... to the behavior of ordinary molecular liquids was observed in this temperature region. The o-Ps yield was strongly reduced in the crystallization region and by addition Of SiO2. The reduction due to filler addition did, however, in the case of nano-sized SiO2 not follow a linear relationship with filler weight...

  13. Low cost silicon-on-ceramic photovoltaic solar cells

    Science.gov (United States)

    Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

    1980-01-01

    A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

  14. Protective silicon coating for nanodiamonds using atomic layer deposition

    International Nuclear Information System (INIS)

    Lu, J.; Wang, Y.H.; Zang, J.B.; Li, Y.N.

    2007-01-01

    Ultrathin silicon coating was deposited on nanodiamonds using atomic layer deposition (ALD) from gaseous monosilane (SiH 4 ). The coating was performed by sequential reaction of SiH 4 saturated adsorption and in situ decomposition. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were utilized to investigate the structural and morphological properties of the coating. Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) were used to compare the thermal stability of nanodiamonds before and after silicon coating. The results confirmed that the deposited cubic phase silicon coating was even and continuous. The protective silicon coating could effectively improve the oxidation resistance of nanodiamonds in air flow, which facilitates the applications of nanodiamonds that are commonly hampered by their poor thermal stability

  15. Protective silicon coating for nanodiamonds using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lu, J. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China); Wang, Y.H. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China); Zang, J.B. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China) and College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China)]. E-mail: diamondzjb@163.com; Li, Y.N. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China)

    2007-01-30

    Ultrathin silicon coating was deposited on nanodiamonds using atomic layer deposition (ALD) from gaseous monosilane (SiH{sub 4}). The coating was performed by sequential reaction of SiH{sub 4} saturated adsorption and in situ decomposition. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were utilized to investigate the structural and morphological properties of the coating. Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) were used to compare the thermal stability of nanodiamonds before and after silicon coating. The results confirmed that the deposited cubic phase silicon coating was even and continuous. The protective silicon coating could effectively improve the oxidation resistance of nanodiamonds in air flow, which facilitates the applications of nanodiamonds that are commonly hampered by their poor thermal stability.

  16. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    International Nuclear Information System (INIS)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

    2014-01-01

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

  17. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-20

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

  18. Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

    International Nuclear Information System (INIS)

    Bhoraskar, V.N.

    2001-01-01

    The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

  19. A highly sensitive and durable electrical sensor for liquid ethanol using thermally-oxidized mesoporous silicon

    Science.gov (United States)

    Harraz, Farid A.; Ismail, Adel A.; Al-Sayari, S. A.; Al-Hajry, A.; Al-Assiri, M. S.

    2016-12-01

    A capacitive detection of liquid ethanol using reactive, thermally oxidized films constructed from electrochemically synthesized porous silicon (PSi) is demonstrated. The sensor elements are fabricated as meso-PSi (pore sizes hydrophobic PSi surface exhibited almost a half sensitivity of the thermal oxide sensor. The response to water is achieved only at the oxidized surface and found to be ∼one quarter of the ethanol sensitivity, dependent on parameters such as vapor pressure and surface tension. The capacitance response retains ∼92% of its initial value after continuous nine cyclic runs and the sensors presumably keep long-term stability after three weeks storage, demonstrating excellent durability and storage stability. The observed behavior in current system is likely explained by the interface interaction due to dipole moment effect. The results suggest that the current sensor structure and design can be easily made to produce notably higher sensitivities for reversible detection of various analytes.

  20. Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2013-07-01

    Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

  1. Positron-Induced Luminescence

    Science.gov (United States)

    Stenson, E. V.; Hergenhahn, U.; Stoneking, M. R.; Pedersen, T. Sunn

    2018-04-01

    We report on the observation that low-energy positrons incident on a phosphor screen produce significantly more luminescence than electrons do. For two different wide-band-gap semiconductor phosphors (ZnS:Ag and ZnO:Zn), we compare the luminescent response to a positron beam with the response to an electron beam. For both phosphors, the positron response is significantly brighter than the electron response, by a factor that depends strongly on incident energy (0-5 keV). Positrons with just a few tens of electron-volts of energy (for ZnS:Ag) or less (for ZnO:Zn) produce as much luminescence as is produced by electrons with several kilo-electron-volts. We attribute this effect to valence band holes and excited electrons produced by positron annihilation and subsequent Auger processes. These results demonstrate a valuable approach for addressing long-standing questions about luminescent materials.

  2. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

  3. Silicon technologies ion implantation and thermal treatment

    CERN Document Server

    Baudrant, Annie

    2013-01-01

    The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.

  4. Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

    International Nuclear Information System (INIS)

    Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

    2006-01-01

    Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

  5. Point defects and precipitation phenomena in Cu-Zn-Al alloys. A study by positrons annihilation

    International Nuclear Information System (INIS)

    Romero, R.; Salgueiro, W.; Somoza, A.; Ahlers, M.H.

    1990-01-01

    Monocrystalline phase Cu-Zn-Al samples in phase β (derived from a bcc structure) were treated with different homogenization thermal treatments, isothermal annealing, and tempering at different time intervals. In this way, point defects are fixed and gamma phase precipitation is induced. The evolution of this technique's characteristic parameters was followed with positron annihilation temporal spectroscopy at room temperature. Owing to the extreme sensitivity of positrons to defects like vacancies, it is possible to study the migration of these defects in detail. It can be seen that the presence of precipitates within the matrix phase modifies the annihilation parameters. Results are discussed as a function of the standard model for positron trapping by defects. (Author). 9 refs., 4 figs

  6. Silicone nanocomposite coatings for fabrics

    Science.gov (United States)

    Eberts, Kenneth (Inventor); Lee, Stein S. (Inventor); Singhal, Amit (Inventor); Ou, Runqing (Inventor)

    2011-01-01

    A silicone based coating for fabrics utilizing dual nanocomposite fillers providing enhanced mechanical and thermal properties to the silicone base. The first filler includes nanoclusters of polydimethylsiloxane (PDMS) and a metal oxide and a second filler of exfoliated clay nanoparticles. The coating is particularly suitable for inflatable fabrics used in several space, military, and consumer applications, including airbags, parachutes, rafts, boat sails, and inflatable shelters.

  7. Identification of equilibrium and irradiation-induced defects in nuclear ceramics: electronic structure calculations of defect properties and positron annihilation characteristics

    International Nuclear Information System (INIS)

    Wiktor, Julia

    2015-01-01

    During in-pile irradiation the fission of actinide nuclei causes the creation of large amounts of defects, which affect the physical and chemical properties of materials inside the reactor, in particular the fuel and structural materials. Positron annihilation spectroscopy (PAS) can be used to characterize irradiation induced defects, empty or containing fission products. This non-destructive experimental technique involves detecting the radiation generated during electron-positron annihilation in a sample and deducing the properties of the material studied. As positrons get trapped in open volume defects in solids, by measuring their lifetime and momentum distributions of the annihilation radiation, one can obtain information on the open and the chemical environments of the defects. In this work electronic structure calculations of positron annihilation characteristics were performed using two-component density functional theory (TCDFT). To calculate the momentum distributions of the annihilation radiation, we implemented the necessary methods in the open-source ABINIT program. The theoretical results have been used to contribute to the identification of the vacancy defects in two nuclear ceramics, silicon carbide (SiC) and uranium dioxide (UO 2 ). (author) [fr

  8. Thermally Stable and Electrically Conductive, Vertically Aligned Carbon Nanotube/Silicon Infiltrated Composite Structures for High-Temperature Electrodes.

    Science.gov (United States)

    Zou, Qi Ming; Deng, Lei Min; Li, Da Wei; Zhou, Yun Shen; Golgir, Hossein Rabiee; Keramatnejad, Kamran; Fan, Li Sha; Jiang, Lan; Silvain, Jean-Francois; Lu, Yong Feng

    2017-10-25

    Traditional ceramic-based, high-temperature electrode materials (e.g., lanthanum chromate) are severely limited due to their conditional electrical conductivity and poor stability under harsh circumstances. Advanced composite structures based on vertically aligned carbon nanotubes (VACNTs) and high-temperature ceramics are expected to address this grand challenge, in which ceramic serves as a shielding layer protecting the VACNTs from the oxidation and erosive environment, while the VACNTs work as a conductor. However, it is still a great challenge to fabricate VACNT/ceramic composite structures due to the limited diffusion of ceramics inside the VACNT arrays. In this work, we report on the controllable fabrication of infiltrated (and noninfiltrated) VACNT/silicon composite structures via thermal chemical vapor deposition (CVD) [and laser-assisted CVD]. In laser-assisted CVD, low-crystalline silicon (Si) was quickly deposited at the VACNT subsurfaces/surfaces followed by the formation of high-crystalline Si layers, thus resulting in noninfiltrated composite structures. Unlike laser-assisted CVD, thermal CVD activated the precursors inside and outside the VACNTs simultaneously, which realized uniform infiltrated VACNT/Si composite structures. The growth mechanisms for infiltrated and noninfiltrated VACNT/ceramic composites, which we attributed to the different temperature distributions and gas diffusion mechanism in VACNTs, were investigated. More importantly, the as-farbicated composite structures exhibited excellent multifunctional properties, such as excellent antioxidative ability (up to 1100 °C), high thermal stability (up to 1400 °C), good high velocity hot gas erosion resistance, and good electrical conductivity (∼8.95 Sm -1 at 823 K). The work presented here brings a simple, new approach to the fabrication of advanced composite structures for hot electrode applications.

  9. The study of defects in metallic alloys by positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Romero, R.; Salgueiro, W.; Somoza, A.

    1990-01-01

    Positron annihilation spectroscopy (PAS) has become in a very useful non destructive testing to the study of condensed matter. Specially, in the last two decades, with the advent of solid state detectors and high-resolution time spectrometers. The basic information obtained with PAS in solid-state physics is on electronic structure in free defect materials. However, positron annihilation techniques (lifetime, angular correlation and Doppler broadening) have been succesfully applied to study crystal lattice defects with lower-than-average electron density, such as vacancies, small vacancy clusters, etc.. In this sense, information about: vacancy formation and migration energies, dislocations, grain boundaries, solid-solid phase transformation and radiation damage was obtained. In this work the application of the positron lifetime technique to study the thermal effects on a fine-grained superplastic Al-Ca-Zn alloy and the quenched-in defects in monocrystals of β Cu-Zn-Al alloy for several quenching temperatures is shown. (Author) [es

  10. Rapid thermal process by RF heating of nano-graphene layer/silicon substrate structure: Heat explosion theory approach

    Science.gov (United States)

    Sinder, M.; Pelleg, J.; Meerovich, V.; Sokolovsky, V.

    2018-03-01

    RF heating kinetics of a nano-graphene layer/silicon substrate structure is analyzed theoretically as a function of the thickness and sheet resistance of the graphene layer, the dimensions and thermal parameters of the structure, as well as of cooling conditions and of the amplitude and frequency of the applied RF magnetic field. It is shown that two regimes of the heating can be realized. The first one is characterized by heating of the structure up to a finite temperature determined by equilibrium between the dissipated loss power caused by induced eddy-currents and the heat transfer to environment. The second regime corresponds to a fast unlimited temperature increase (heat explosion). The criterions of realization of these regimes are presented in the analytical form. Using the criterions and literature data, it is shown the possibility of the heat explosion regime for a graphene layer/silicon substrate structure at RF heating.

  11. Positron Factory project

    Energy Technology Data Exchange (ETDEWEB)

    Okada, Sohei; Sunaga, Hiromi; Kaneko, Hirohisa; Kawasuso, Atsuo; Masuno, Shin-ichi; Takizawa, Haruki; Yotsumoto, Keiichi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    We have started drafting a construction program for the Positron Factory, in which linac-based intense monoenergetic positron beams are planned to be applied for materials science, biotechnology and basic physics and chemistry. A technical survey study confirmed the feasibility of manufacturing a dedicated electron linac of 100 kW class with a beam energy of 100 MeV, which will produce a world-highest monoenergetic positron beam of more than 10{sup 10}/sec in intensity. A self-driven rotating converter (electrons to positrons and photons) suitable for the high power electron beam was devised and successfully tested. The practicability of simultaneous extraction of multi-channel monoenergetic positron beams with multiple moderator assemblies, which had been originated on the basis of a Monte Carlo simulation, was demonstrated by an experiment using an electron linac. An efficient moderator structure, which is composed of honeycomb-like assembled moderator foils and reflectors, is also proposed. (author)

  12. Intravitreal properties of porous silicon photonic crystals

    Science.gov (United States)

    Cheng, L; Anglin, E; Cunin, F; Kim, D; Sailor, M J; Falkenstein, I; Tammewar, A; Freeman, W R

    2009-01-01

    Aim To determine the suitability of porous silicon photonic crystals for intraocular drug-delivery. Methods A rugate structure was electrochemically etched into a highly doped p-type silicon substrate to create a porous silicon film that was subsequently removed and ultrasonically fractured into particles. To stabilise the particles in aqueous media, the silicon particles were modified by surface alkylation (using thermal hydrosilylation) or by thermal oxidation. Unmodified particles, hydrosilylated particles and oxidised particles were injected into rabbit vitreous. The stability and toxicity of each type of particle were studied by indirect ophthalmoscopy, biomicroscopy, tonometry, electroretinography (ERG) and histology. Results No toxicity was observed with any type of the particles during a period of >4 months. Surface alkylation led to dramatically increased intravitreal stability and slow degradation. The estimated vitreous half-life increased from 1 week (fresh particles) to 5 weeks (oxidised particles) and to 16 weeks (hydrosilylated particles). Conclusion The porous silicon photonic crystals showed good biocompatibility and may be used as an intraocular drug-delivery system. The intravitreal injectable porous silicon photonic crystals may be engineered to host a variety of therapeutics and achieve controlled drug release over long periods of time to treat chronic vitreoretinal diseases. PMID:18441177

  13. KEK-IMSS Slow Positron Facility

    Energy Technology Data Exchange (ETDEWEB)

    Hyodo, T; Wada, K; Yagishita, A; Kosuge, T; Saito, Y; Kurihara, T; Kikuchi, T; Shirakawa, A; Sanami, T; Ikeda, M; Ohsawa, S; Kakihara, K; Shidara, T, E-mail: toshio.hyodo@kek.jp [High Energy Accelerator Research Organization (KEK) 1-1 Oho, Tsukuba, Ibaraki, 305-0801 (Japan)

    2011-12-01

    The Slow Positron Facility at the Institute of Material Structure Science (IMSS) of High Energy Accelerator Research Organization (KEK) is a user dedicated facility with an energy tunable (0.1 - 35 keV) slow positron beam produced by a dedicated 55MeV linac. The present beam line branches have been used for the positronium time-of-flight (Ps-TOF) measurements, the transmission positron microscope (TPM) and the photo-detachment of Ps negative ions (Ps{sup -}). During the year 2010, a reflection high-energy positron diffraction (RHEPD) measurement station is going to be installed. The slow positron generator (converter/ moderator) system will be modified to get a higher slow positron intensity, and a new user-friendly beam line power-supply control and vacuum monitoring system is being developed. Another plan for this year is the transfer of a {sup 22}Na-based slow positron beam from RIKEN. This machine will be used for the continuous slow positron beam applications and for the orientation training of those who are interested in beginning researches with a slow positron beam.

  14. Positron deposition in plasmas by positronium beam ionization and transport of positrons in tokamak plasmas

    International Nuclear Information System (INIS)

    Murphy, T.J.

    1986-11-01

    In a recently proposed positron transport experiment, positrons would be deposited in a fusion plasma by forming a positronium (Ps) beam and passing it through the plasma. Positrons would be deposited as the beam is ionized by plasma ions and electrons. Radial transport of the positrons to the limiter could then be measured by detecting the gamma radiation produced by annihilation of positrons with electrons in the limiter. This would allow measurements of the transport of electron-mass particles and might shed some light on the mechanisms of electron transport in fusion plasmas. In this paper, the deposition and transport of positrons in a tokamak are simulated and the annihilation signal determined for several transport models. Calculations of the expected signals are necessary for the optimal design of a positron transport experiment. There are several mechanisms for the loss of positrons besides transport to the limiter. Annihilation with plasma electrons and reformation of positronium in positron-hydrogen collisions are two such processes. These processes can alter the signal and place restrictions ons on the plasma conditions in which positron transport experiments can be effectively performed

  15. NEW METHOD OF PRODUCTION OF ALUNINUM SILICON ALLOYS

    Directory of Open Access Journals (Sweden)

    V. K. Afanasiev

    2015-01-01

    Full Text Available A new approach to the preparation of aluminum-silicon alloys, based on the concept of the leading role of hydrogen in determining the structure and properties of alloys consists in using as charge materials of silicon dioxide (silica and hydrogen instead of crystalline silicon was described. Practical ways to implement the new method were proposed on the example of industrial alloys prepared on charge synthetic alloy. It is shown that the application of the proposed method allows to improve the mechanical properties and reduce the coefficient of thermal expansion alloys, Al-Si. The effect of heat treatment on mechanical properties, density and thermal expansion of synthetic alloys was researched.

  16. Interface properties of 4H-SiC MOS structures studied by a slow positron beam

    International Nuclear Information System (INIS)

    Maekawa, M.; Kawasuso, A.; Ichimiya, A.; Yoshikawa, M.

    2004-01-01

    Interfacial defects existing near the SiO 2 /SiC interface are an important issue for fabrication of high performance SiC devices. We investigate a thermally grown SiO 2 /SiC layer of 4H-SiC MOS structure by positron annihilation spectroscopy. The Doppler broadening of annihilation quanta was measured as a function of the incident positron energy and the gate bias. Applying a negative gate bias, significant increases in S-parameters were observed. This indicates the migration of implanted positrons towards the SiO 2 /SiC interface and annihilation at interfacial defects. Ultraviolet (UV) ray irradiation was used to extract the influence of the positron trapping to the interfacial states. S-parameters in the interface region were reduced by UV irradiation. This shows that positron trapping probability decreased because the charge state of interfacial defects changed to positive. From the recovery of S-parameters after 24 hours, the interfacial states discharge slowly and exist in large quantities, because the changes of S-parameter by the UV irradiation are larger than changes induced by bias change. (orig.)

  17. Thermal and optical excitation of trapped electrons in high-density polyethylene (HDPE) studied through positron annihilation

    International Nuclear Information System (INIS)

    Nahid, F.; Zhang, J.D.; Yu, T.F.; Ling, C.C.; Fung, S.; Beling, C.D.

    2011-01-01

    Positronium (Ps) formation in high-density polyethylene (HDPE) has been studied below the glass transition temperature. The formation probability increases with positron irradiation time due to an increasing number of inter-track trapped electrons becoming available for positron capture. The temperature variation of the saturated Ps level is discussed in different models. The quenching of trapped electrons by light has been studied and the optical de-trapping cross-section for different photon energies has been estimated over the visible region.

  18. Positron lifetime studies in undoped and Sr doped La2CuO4

    International Nuclear Information System (INIS)

    Sundar, C.S.; Bharathi, A.; Hariharan, Y.; Vasumathi, D.

    1992-01-01

    The results of positron lifetime measurements as a function of temperature, in undoped and Sr doped La 2 CuO 4 are presented. A second component of lifetime with a value of 225 ps is seen to develop after 100degC, whose intensity grows sharply in the range of 100degC to 250degC. The mean lifetime increases from 170 ps to 207 ps as the temperature is increased from room temperature to 300degC. Using the results of the theoretical calculations of positron lifetimes at vacancies in La 2 CuO 4 , it is argued that the increase in lifetime with temperature is due to positron trapping at the thermally generated La vacancies. From a two state trapping model analysis, the formation energy is estimated to be 0.39±0.04 eV

  19. A transmission positron microscope and a scanning positron microscope being built at KEK, Japan

    International Nuclear Information System (INIS)

    Doyama, M.; Inoue, M.; Kogure, Y.; Kurihara, T.; Yagishita, A.; Shidara, T.; Nakahara, K.; Hayashi, Y.; Yoshiie, T.

    2001-01-01

    This paper reports the plans of positron microscopes being built at KEK (High Energy Accelerator Research Organization), Tsukuba, Japan improving used electron microscopes. The kinetic energies of positron produced by accelerators or by nuclear decays have not a unique value but show a spread over in a wide range. Positron beam will be guided near electron microscopes, a transmission electron microscope (JEM100S) and a scanning electron microscope (JSM25S). Positrons are slowed down by a tungsten foil, accelerated and focused on a nickel sheet. The monochromatic focused beam will be injected into an electron microscope. The focusing of positrons and electrons is achieved by magnetic system of the electron microscopes. Imaging plates are used to record positron images for the transmission electron microscope. (orig.)

  20. Positron emission computed tomography

    International Nuclear Information System (INIS)

    Grover, M.; Schelbert, H.R.

    1985-01-01

    Regional mycardial blood flow and substrate metabolism can be non-invasively evaluated and quantified with positron emission computed tomography (Positron-CT). Tracers of exogenous glucose utilization and fatty acid metabolism are available and have been extensively tested. Specific tracer kinetic models have been developed or are being tested so that glucose and fatty acid metabolism can be measured quantitatively by Positron-CT. Tracers of amino acid and oxygen metabolism are utilized in Positron-CT studies of the brain and development of such tracers for cardiac studies are in progress. Methods to quantify regional myocardial blood flow are also being developed. Previous studies have demonstrated the ability of Positron-/CT to document myocardial infarction. Experimental and clinical studies have begun to identify metabolic markers of reversibly ischemic myocardium. The potential of Positron-CT to reliably detect potentially salvageable myocardium and, hence, to identify appropriate therapeutic interventions is one of the most exciting applications of the technique

  1. Porous silicon damage enhanced phosphorus and aluminium gettering of p-type Czochralski silicon

    International Nuclear Information System (INIS)

    Hassen, M.; Ben Jaballah, A.; Hajji, M.; Rahmouni, H.; Selmi, A.; Ezzaouia, H.

    2005-01-01

    In this work, porous silicon damage (PSD) is presented as a simple sequence for efficient external purification techniques. The method consists of using thin nanoporous p-type silicon on both sides of the silicon substrates with randomly hemispherical voids. Then, two main sample types are processed. In the first type, thin aluminium layers (≥1 μm) are thermally evaporated followed by photo-thermal annealing treatments in N 2 atmosphere at one of several temperatures ranging between 600 and 800 deg. C. In the second type, phosphorus is continually diffused in N 2 /O 2 ambient in a solid phase from POCl 3 solution during heating at one of several temperatures ranging between 750 and 1000 deg. C for 1 h. Hall Effect and Van Der Pauw methods prove the existence of an optimum temperature in the case of phosphorus gettering at 900 deg. C yielding a Hall mobility of about 982 cm 2 V -1 s -1 . However, in the case of aluminium gettering, there is no gettering limit in the as mentioned temperature range. Metal/Si Schottky diodes are elaborated to clarify these improvements. In this study, we demonstrate that enhanced metal solubility model cannot explain the gettering effect. The solid solubility of aluminium is higher than that of P atoms in silicon; however, the device yield confirms the effectiveness of phosphorus as compared to aluminium

  2. On thermalization of electron-positron-photon plasma

    Energy Technology Data Exchange (ETDEWEB)

    Siutsou, I. A., E-mail: siutsou@icranet.org [CAPES–ICRANet program, ICRANet–Rio, CBPF 22290-180, Rua Dr. Xavier Sigaud, 150, Urca, Rio de Janeiro, RJ (Brazil); Aksenov, A. G. [Institute for Computer-Aided Design, Russian Academy of Sciences 123056, 2nd Brestskaya st., 19/18, Moscow (Russian Federation); Vereshchagin, G. V. [ICRANet 65122, p.le della Republica, 10, Pescara (Italy)

    2015-12-17

    Recently a progress has been made in understanding thermalization mechanism of relativistic plasma starting from a non-equilibrium state. Relativistic Boltzmann equations were solved numerically for homogeneous isotropic plasma with collision integrals for two- and three-particle interactions calculated from the first principles by means of QED matrix elements. All particles were assumed to fulfill Boltzmann statistics. In this work we follow plasma thermalization by accounting for Bose enhancement and Pauli blocking in particle interactions. Our results show that particle in equilibrium reach Bose-Einstein distribution for photons, and Fermi-Dirac one for electrons, respectively.

  3. On thermalization of electron-positron-photon plasma

    Science.gov (United States)

    Siutsou, I. A.; Aksenov, A. G.; Vereshchagin, G. V.

    2015-12-01

    Recently a progress has been made in understanding thermalization mechanism of relativistic plasma starting from a non-equilibrium state. Relativistic Boltzmann equations were solved numerically for homogeneous isotropic plasma with collision integrals for two- and three-particle interactions calculated from the first principles by means of QED matrix elements. All particles were assumed to fulfill Boltzmann statistics. In this work we follow plasma thermalization by accounting for Bose enhancement and Pauli blocking in particle interactions. Our results show that particle in equilibrium reach Bose-Einstein distribution for photons, and Fermi-Dirac one for electrons, respectively.

  4. Positron studies in catalysis research

    International Nuclear Information System (INIS)

    1994-01-01

    During the past eight months, the authors have made progress in several areas relevant to the eventual use of positron techniques in catalysis research. They have come closer to the completion of their positron microscope, and at the same time have performed several studies in their non-microscopic positron spectrometer which should ultimately be applicable to catalysis. The current status of the efforts in each of these areas is summarized in the following sections: Construction of the positron microscope (optical element construction, data collection software, and electronic sub-assemblies); Doppler broadening spectroscopy of metal silicide; Positron lifetime spectroscopy of glassy polymers; and Positron lifetime measurements of pore-sizes in zeolites

  5. Process for forming a porous silicon member in a crystalline silicon member

    Science.gov (United States)

    Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

    1999-01-01

    Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

  6. 22 Na positron source for annihilation positron spectroscopy

    International Nuclear Information System (INIS)

    Cimpeanu, Catalina; Craciun, L.; Dragulescu, E.; Dudu, D.; Racolta, P. M.; Voiculescu, Dana; Miron, N.

    2003-01-01

    To extend the nuclear physics applications and to perform the study of vacancy - type defects in metals, semiconductors, polymers etc., we decided to promote positron annihilation techniques. In order to achieve this goal we started a project of dedicated positron sources produced at the IFIN-HH U-120 Cyclotron. We have used the nuclear reaction: 24 Mg(d,α) 22 Na with deuterons of 13 MeV energy. The paper presents the main characteristics of this procedure, as follows: general conditions asked for 22 NaCl sources, reactive chamber and characteristics of Mg target, parameters for the irradiation, radiochemical procedures for separating Na from Mg after the irradiation and geometrical or mechanical requirements for dedicated NaCl source for positron annihilation spectrometry. In the e + lifetime measurements, the e + end - start signals may be obtained from prompt γ -quanta emitted from the NaCl source (1. 275 MeV photons). The 22 NaCl stock solution obtained by radiochemical separation will be kept in quartz sealed ampoules in dry places and will be dropped between the study materials before the use in positron spectrometry. (authors)

  7. Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures

    Energy Technology Data Exchange (ETDEWEB)

    Bolotov, V. V.; Knyazev, E. V.; Ponomareva, I. V.; Kan, V. E., E-mail: kan@obisp.oscsbras.ru; Davletkildeev, N. A.; Ivlev, K. E.; Roslikov, V. E. [Russian Academy of Sciences, Omsk Scientific Center, Siberian Branch (Russian Federation)

    2017-01-15

    The oxidation of mesoporous silicon in a double-layer “macroporous silicon–mesoporous silicon” structure is studied. The morphology and dielectric properties of the buried insulating layer are investigated using electron microscopy, ellipsometry, and electrical measurements. Specific defects (so-called spikes) are revealed between the oxidized macropore walls in macroporous silicon and the oxidation crossing fronts in mesoporous silicon. It is found that, at an initial porosity of mesoporous silicon of 60%, three-stage thermal oxidation leads to the formation of buried silicon-dioxide layers with an electric-field breakdown strength of E{sub br} ~ 10{sup 4}–10{sup 5} V/cm. Multilayered “porous silicon-on-insulator” structures are shown to be promising for integrated chemical micro- and nanosensors.

  8. SiC-Based Composite Materials Obtained by Siliconizing Carbon Matrices

    Science.gov (United States)

    Shikunov, S. L.; Kurlov, V. N.

    2017-12-01

    We have developed a method for fabrication of parts of complicated configuration from composite materials based on SiC ceramics, which employs the interaction of silicon melt with the carbon matrix having a certain composition and porosity. For elevating the operating temperatures of ceramic components, we have developed a method for depositing protective silicon-carbide coatings that is based on the interaction of the silicon melt and vapor with carbon obtained during thermal splitting of hydrocarbon molecules. The new structural ceramics are characterized by higher operating temperatures; chemical stability; mechanical strength; thermal shock, wear and radiation resistance; and parameters stability.

  9. Positron emission tomography

    International Nuclear Information System (INIS)

    Iio, Masahiro

    1982-01-01

    Utilization of positron emission tomography was reviewed in relation to construction and planned construction of small-size medical cyclotrons, planned construction of positron cameras and utilization of short-lived radionuclides. (Chiba, N.)

  10. Microencapsulation of silicon cavities using a pulsed excimer laser

    KAUST Repository

    Sedky, Sherif M.; Tawfik, Hani H.; Ashour, Mohamed; Graham, Andrew B.; Provine, John W.; Wang, Qingxiao; Zhang, Xixiang; Howe, Roger T.

    2012-01-01

    This work presents a novel low thermal-budget technique for sealing micromachined cavities in silicon. Cavities are sealed without deposition, similar to the silicon surface-migration sealing process. In contrast to the 1100°C furnace anneal

  11. Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium

    International Nuclear Information System (INIS)

    Tao Meng; Udeshi, Darshak; Basit, Nasir; Maldonado, Eduardo; Kirk, Wiley P.

    2003-01-01

    Dangling bonds and surface states are inherent to semiconductor surfaces. By passivating dangling bonds on the silicon (001) surface with a monolayer of selenium, surface states are removed from the band gap. Magnesium contacts on selenium-passivated silicon (001) behave ohmically, as expected from the work function of magnesium and the electron affinity of silicon. After rapid thermal annealing and hot-plate annealing, magnesium contacts on selenium-passivated silicon (001) show better thermal stability than on hydrogen-passivated silicon (001), which is attributed to the suppression of silicide formation by selenium passivation

  12. Defect studies in annealed ZnO by positron annihilation spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sanyal, D; Roy, Tapatee Kundu; Chakrabarti, Mahuya; Dechoudhury, Siddhartha; Bhowmick, Debasis; Chakrabarti, Alok [Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700064 (India)

    2008-01-30

    Coincidence Doppler broadening of the positron annihilation technique has been employed to identify the defects in thermally annealed 'as-received' ZnO and thermally annealed ball-milled nanocrystalline ZnO. Results indicate that a significant amount of oxygen vacancy has been created in ZnO due to annealing at about 500 deg. C and above. The results also indicate that the Zn vacancy created during the ball milling process can be easily removed by annealing the sample at about 500 deg. C and above. The defect characterization has also been correlated with the magnetic properties of ZnO.

  13. Defect studies in annealed ZnO by positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Sanyal, D; Roy, Tapatee Kundu; Chakrabarti, Mahuya; Dechoudhury, Siddhartha; Bhowmick, Debasis; Chakrabarti, Alok

    2008-01-01

    Coincidence Doppler broadening of the positron annihilation technique has been employed to identify the defects in thermally annealed 'as-received' ZnO and thermally annealed ball-milled nanocrystalline ZnO. Results indicate that a significant amount of oxygen vacancy has been created in ZnO due to annealing at about 500 deg. C and above. The results also indicate that the Zn vacancy created during the ball milling process can be easily removed by annealing the sample at about 500 deg. C and above. The defect characterization has also been correlated with the magnetic properties of ZnO

  14. Generation of a high-brightness pulsed positron beam for the Munich scanning positron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Piochacz, Christian

    2009-11-20

    Within the present work the prerequisites for the operation of the Munich scanning positron microscope (SPM) at the high intense neutron induced positron source Munich (NEPOMUC) were established. This was accomplished in two steps: Firstly, a re-moderation device was installed at the positron beam facility NEPOMUC, which enhances the brightness of the positron beam for all connected experiments. The second step was the design, set up and initial operation of the SPM interface for the high efficient conversion of the continuous beam into a bunched beam. The in-pile positron source NEPOMUC creates a positron beam with a diameter of typically 7 mm, a kinetic energy of 1 keV and an energy spread of 50 eV. The NEPOMUC re-moderator generates from this beam a low energy positron beam (20 - 200 eV) with a diameter of less than 2 mm and an energy spread well below 2.5 eV. This was achieved with an excellent total efficiency of 6.55{+-}0.25 %. The re-moderator was not only the rst step to implement the SPM at NEPOMUc, it enables also the operation of the pulsed low energy positron beam system (PLEPS). Within the present work, at this spectrometer rst positron lifetime measurements were performed, which revealed the defect types of an ion irradiated uranium molybdenum alloy. Moreover, the instruments which were already connected to the positron beam facility bene ts considerably of the high brightness enhancement. In the new SPM interface an additional re-moderation stage enhances the brightness of the beam even more and will enable positron lifetime measurements at the SPM with a lateral resolution below 1 {mu}m. The efficiency of the re-moderation process in this second stage was 24.5{+-}4.5 %. In order to convert high efficiently the continuous positron beam into a pulsed beam with a repetition rate of 50 MHz and a pulse duration of less than 50 ps, a sub-harmonic pre-bucher was combined with two sine wave bunchers. Furthermore, the additional re-moderation stage of the

  15. Generation of a high-brightness pulsed positron beam for the Munich scanning positron microscope

    International Nuclear Information System (INIS)

    Piochacz, Christian

    2009-01-01

    Within the present work the prerequisites for the operation of the Munich scanning positron microscope (SPM) at the high intense neutron induced positron source Munich (NEPOMUC) were established. This was accomplished in two steps: Firstly, a re-moderation device was installed at the positron beam facility NEPOMUC, which enhances the brightness of the positron beam for all connected experiments. The second step was the design, set up and initial operation of the SPM interface for the high efficient conversion of the continuous beam into a bunched beam. The in-pile positron source NEPOMUC creates a positron beam with a diameter of typically 7 mm, a kinetic energy of 1 keV and an energy spread of 50 eV. The NEPOMUC re-moderator generates from this beam a low energy positron beam (20 - 200 eV) with a diameter of less than 2 mm and an energy spread well below 2.5 eV. This was achieved with an excellent total efficiency of 6.55±0.25 %. The re-moderator was not only the rst step to implement the SPM at NEPOMUc, it enables also the operation of the pulsed low energy positron beam system (PLEPS). Within the present work, at this spectrometer rst positron lifetime measurements were performed, which revealed the defect types of an ion irradiated uranium molybdenum alloy. Moreover, the instruments which were already connected to the positron beam facility bene ts considerably of the high brightness enhancement. In the new SPM interface an additional re-moderation stage enhances the brightness of the beam even more and will enable positron lifetime measurements at the SPM with a lateral resolution below 1 μm. The efficiency of the re-moderation process in this second stage was 24.5±4.5 %. In order to convert high efficiently the continuous positron beam into a pulsed beam with a repetition rate of 50 MHz and a pulse duration of less than 50 ps, a sub-harmonic pre-bucher was combined with two sine wave bunchers. Furthermore, the additional re-moderation stage of the SPM

  16. Thermal diffusivity of diamond films using a laser pulse technique

    International Nuclear Information System (INIS)

    Albin, S.; Winfree, W.P.; Crews, B.S.

    1990-01-01

    Polycrystalline diamond films were deposited using a microwave plasma-enhanced chemical vapor deposition process. A laser pulse technique was developed to measure the thermal diffusivity of diamond films deposited on a silicon substrate. The effective thermal diffusivity of a diamond film on silicon was measured by observing the phase and amplitude of the cyclic thermal waves generated by laser pulses. An analytical model is presented to calculate the effective inplane (face-parallel) diffusivity of a two-layer system. The model is used to reduce the effective thermal diffusivity of the diamond/silicon sample to a value for the thermal diffusivity and conductivity of the diamond film

  17. Positron annihilation in gaseous nitrided cold-rolled FeNiTi films

    NARCIS (Netherlands)

    Chechenin, NG; van Veen, A; Galindo, RE; Schut, H; Chezan, A; Boerma, DO; Triftshauser, W; Kogel, G; Sperr, P

    2001-01-01

    Positron beam analysis (PBA) was performed on cold-rolled Fe0.94Ni0.04Ti0.02 foils, which were subjected to different thermal treatments in an atmosphere of a gas mixture of NH3+H-2 (nitriding). The nitriding of the samples in the alpha -region (alphaN) of Lehrer diagram for the Fe-N system produced

  18. PAT and SEM study of porous silicon formed by anodization methods

    International Nuclear Information System (INIS)

    Liu Jian; Wei Long; Wang Huiyao; Ma Chuangxin; Wang Baoyi

    2000-01-01

    The porous silicon formed by anodization of crystal silicon was studied by positron annihilation technique (PAT) and scanning electron microscopy (SEM). The PAT experiments showed that the mean life and vacancy defects increased with the increasing anodization time. While the intensities of the longest lifetime, several ns-tens ns (ortho-positronium) dropped down. Small single-crystal Si spheres with mean radius of a few μm were observed by SEM after anodization. Pits with mean radius of a few μm from the divorcement of single-crystal spheres were also observed after further anodization. The increases of vacancy defects might be that the extension of structures of porous silicon towards inner layer with anodization time and caused more vacancy defects in inner layer. The SEM observation presented another possibility of the increase of density of vacancy defects in surface layer induced by the change of structures

  19. Free volume study on the miscibility of PEEK/PEI blend using positron annihilation and dynamic mechanical thermal analysis

    International Nuclear Information System (INIS)

    Ramani, R; Alam, S

    2015-01-01

    High performance polymer blend of poly(ether ether ketone) (PEEK) and poly(ether imide) (PEI) was examined for their free volume behaviour using positron annihilation lifetime spectroscopy and dynamic mechanical thermal analysis methods. The fractional free volume obtained from PALS shows a negative deviation from linear additivity rule implying good miscibility between PEEK and PEI. The dynamic modulus and loss tangent were obtained for the blends at three different frequencies 1, 10 and 100 Hz at temperatures close to and above their glass transition temperature. Applying Time-Temperature-Superposition (TTS) principle to the DMTA results, master curves were obtained at a reference temperature T o and the WLF coefficients c 0 1 and c 0 2 were evaluated. Both the methods give similar results for the dependence of fractional free volume on PEI content in this blend. The results reveal that free volume plays an important role in determining the visco-elastic properties in miscible polymer blends. (paper)

  20. Electromagnetic noise studies in a silicon strip detector, used as part of a luminosity monitor at LEP

    Science.gov (United States)

    Ødegaard, Trygve; Tafjord, Harald; Buran, Torleiv

    1995-02-01

    As part of the luminosity monitor, SAT, in the DELPHI [1] experiment at CERN's Large Electron Positron collider, a tracking detector constructed from silicon strip detector elements was installed in front of an electromagnetic calorimeter. The luminosity was measured by counting the number of Bhabha events at the interaction point of the electron and the positron beans. The tracking detector reconstructs from the interaction point and the calorimeter measures the corresponding particles' energies. The SAT Tracker [2] consists of 504 silicon strip detectors. The strips are DC-coupled to CMOS VLSI-chips, baptized Balder [3,4]. The chip performs amplification, zero-suppression, digitalisation, and multiplexing. The requirements of good space resolution and high efficiency put strong requirements on noise control. A short description of the geometry and the relevant circuit layout is given. We describe the efforts made to minimise the electromagnetic noise in the detector and present some numbers of the noise level using various techniques.

  1. Electromagnetic noise studies in a silicon strip detector, used as part of a luminosity monitor at LEP

    International Nuclear Information System (INIS)

    Oedegaard, T.; Tafjord, H.; Buran, T.

    1994-12-01

    As part of the luminosity monitor SAT in the DELPHI experiment at CERN's Large Electron Positron collider, a tracking detector constructed from silicon strip detector elements was installed in front of an electromagnetic calorimeter. The luminosity was measured by counting the number of Bhabha events at the interaction point of the electron and the positron beams. The tracking detector reconstructs tracks from the interaction point and the calorimeter measures the corresponding particles' energies.The SAT Tracker consists of 504 silicon strip detectors. The strips are DC-coupled to CMOS VLSI-chips, baptized Balder. The chip performs amplification, zero-suppression, digitalisation, and multiplexing. The requirements of good space resolution and high efficiency put strong requirements on noise control. A short description of the geometry and the relevant circuit layout is given. The authors describe the efforts made to minimise the electromagnetic noise in the detector and present some numbers of the noise level using various techniques. 11 refs., 5 figs., 4 tabs

  2. Current-voltage characteristics of porous-silicon structures

    International Nuclear Information System (INIS)

    Diligenti, A.; Nannini, A.; Pennelli, G.; Pieri, F.; Fuso, F.; Allegrini, M.

    1996-01-01

    I-V DC characteristics have been measured on metal/porous-silicon structures. In particular, the measurements on metal/free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/porous-silicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activation energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifying contacts, are described

  3. Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography

    Science.gov (United States)

    Van Elburg, Devin J.; Noble, Scott D.; Hagey, Simone; Goertzen, Andrew L.

    2018-03-01

    Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials (‘100MP’, ‘A100’, and ‘GPA’) were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude

  4. Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography.

    Science.gov (United States)

    Van Elburg, Devin J; Noble, Scott D; Hagey, Simone; Goertzen, Andrew L

    2018-02-26

    Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials ('100MP', 'A100', and 'GPA') were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude degradation

  5. Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

    Science.gov (United States)

    Mondon, A.; Wang, D.; Zuschlag, A.; Bartsch, J.; Glatthaar, M.; Glunz, S. W.

    2014-12-01

    In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel-silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide a continuous nickel silicide of greater depth, polycrystalline modification and expected phase according to thermal budget is formed. Information about the nature of silicide growth on typical solar cell surfaces could be obtained from silicide phase and geometric observations, which were supported by FIB tomography. The theory of isotropic NiSi growth and orientation dependent NiSi2 growth was derived. By this, a very well performing low-cost metallization for silicon solar cells has been brought an important step closer to industrial introduction.

  6. Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers

    Energy Technology Data Exchange (ETDEWEB)

    Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)

    2012-10-15

    We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Thermoelectric properties of silicon nano pillars

    Energy Technology Data Exchange (ETDEWEB)

    Stranz, Andrej; Soekmen, Uensal; Waag, Andreas; Peiner, Erwin [Institute of Semiconductor Technology, Braunschweig (Germany)

    2010-07-01

    In order to establish silicon as a efficient thermoelectric material, its high thermal conductivity has to be reduced which is feasible, e.g., by nano structuring. Therefore, in this study Si-based sub-micron pillars of various dimensions were investigated. Using anisotropic etching followed by thermal oxidation we could fabricate pillars of diameters <500 nm, about 25 {mu}m in height with aspect ratios of more than 50. The distance between the pillars was varied from 500 nm to 10 micron. Besides the fabrication and structural characterization of sub-micron silicon pillars, and adequate metrology for measuring their thermoelectric properties was implemented. Commercial tungsten probes and self-made gold probes, as well as Wollaston wire probes were used for electrical and thermal conductivity, as well as Seebeck voltage measurements on single pillars in a scanning electron microscope equipped with nano manipulators.

  8. Study on high-silicon boron-containing zeolite by thermogravimetric and IR-spectroscopy techniques

    International Nuclear Information System (INIS)

    Chukin, G.D.; Nefedov, B.K.; Surin, S.A.; Polinina, E.V.; Khusid, B.L.; Sidel'kovskaya, V.G.

    1985-01-01

    The structure identity of initial Na-forms of boron-containing and aluminosilicate high-silicon zeolites is established by thermogravimetric and IR-spectroscopy methods. The presence of boron in Na-forms of high-silicon zeolites is shown to lead to reduction of structure thermal stability. It is noted that thermal stability of the H-form of both high-silicon boron-containing and boron-free zeolites is practically equal and considerably higher than that of Na-forms

  9. CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

    Directory of Open Access Journals (Sweden)

    V. А. Pilipenko

    2017-01-01

    Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

  10. a Positron 2D-ACAR Study of the Silicon-Dioxide Interface and the Point Defects in the Semi-Insulating Gallium Arsenide

    Science.gov (United States)

    Peng, Jianping

    The SiO_2-Si system has been the subject of extensive study for several decades. Particular interest has been paid to the interface between Si single crystal and the amorphous SiO_2 which determines the properties and performances of devices. This is significant because of the importance of Si technology in the semiconductor industry. The development of the high-intensity slow positron beam at Brookhaven National Laboratory make it possible to study this system for the first time using the positron two-dimensional angular correlation of annihilation radiation (2D-ACAR) technique. 2D-ACAR is a well established and is a non-destructive microscopic probe for studying the electronic structure of materials, and for doing the depth-resolved measurements. Some unique information was obtained from the measurements performed on the SiO_2-Si system: Positronium (Ps) atoms formation and trapping in microvoids in both oxide and interface regions; and positron annihilation at vacancy-like defects in the interface region which can be attributed to the famous Pb centers. The discovery of the microvoids in the interface region may have some impact on the fabrication of the next generation electronic devices. Using the conventional 2D-ACAR setup with a ^{22}Na as positron source, we also studied the native arsenic (As) vacancy in the semi -insulating gallium-arsenide (SI-GaAs), coupled with in situ infrared light illumination. The defect spectrum was obtained by comparing the spectrum taken without photo -illumination to the spectrum taken with photo-illumination. The photo-illumination excited electrons from valence band to the defect level so that positrons can become localized in the defects. The two experiments may represent a new direction of the application of positron 2D-ACAR technique on the solid state physics and materials sciences.

  11. Generation of neutron scattering cross sections for silicon dioxide

    International Nuclear Information System (INIS)

    Ramos, R; Marquez Damian, J.I; Granada, J.R.; Cantargi, F

    2009-01-01

    A set of neutron scattering cross sections for silicon and oxygen bound in silicon dioxide were generated and validated. The cross sections were generated in the ACE format for MCNP using the nuclear data processing system NJOY, and the validation was done with published experimental data. This cross section library was applied to the calculation of five critical configurations published in the benchmark Critical Experiments with Heterogeneous Compositions of Highly Enriched Uranium, Silicon Dioxide and Polyethylene. The original calculations did not use the thermal scattering libraries generated in this work and presented significant differences with the experimental results. For this reason, the newly generated library was added to the input and the multiplication factor for each configuration was recomputed. The utilization of the thermal scattering libraries did not result in an improvement of the computational results. Based on this we conclude that integral experiments to validate this type of thermal cross sections need to be designed with a higher influence of thermal scattering in the measured result, and the experiments have to be performed under more controlled conditions. [es

  12. Radiation emission phenomena in bent silicon crystals: Theoretical and experimental studies with 120 GeV/c positrons

    International Nuclear Information System (INIS)

    Lietti, D.; Bagli, E.; Baricordi, S.; Berra, A.; Bolognini, D.; Chirkov, P.N.; Dalpiaz, P.; Della Mea, G.; De Salvador, D.; Hasan, S.; Guidi, V.; Maisheev, V.A.

    2012-01-01

    The radiation emission phenomena in bent silicon crystals have been thoroughly investigated at the CERN SPS-H4 beamline. The incoming and outgoing trajectories of charged particles impinging on a silicon strip crystal have been reconstructed by high precision silicon microstrip detectors. A spectrometer method has been exploited to measure the radiation emission spectra both in volume reflection and in channeling. The theoretical method used to evaluate the photon spectra is presented and compared with the experimental results.

  13. Electrochemical properties of ion implanted silicon

    International Nuclear Information System (INIS)

    Pham minh Tan.

    1979-11-01

    The electrochemical behaviour of ion implanted silicon in contact with hydrofluoric acid solution was investigated. It was shown that the implanted layer on silicon changes profoundly its electrochemical properties (photopotential, interface impedance, rest potential, corrosion, current-potential behaviour, anodic dissolution of silicon, redox reaction). These changes depend strongly on the implantation parameters such as ion dose, ion energy, thermal treatment and ion mass and are weakly dependent on the chemical nature of the implantation ion. The experimental results were evaluated and interpreted in terms of the semiconductor electrochemical concepts taking into account the interaction of energetic ions with the solid surface. The observed effects are thus attributed to the implantation induced damage of silicon lattice and can be used for profiling of the implanted layer and the electrochemical treatment of the silicon surface. (author)

  14. Coupling of near-field thermal radiative heating and phonon Monte Carlo simulation: Assessment of temperature gradient in n-doped silicon thin film

    International Nuclear Information System (INIS)

    Wong, Basil T.; Francoeur, Mathieu; Bong, Victor N.-S.; Mengüç, M. Pinar

    2014-01-01

    Near-field thermal radiative exchange between two objects is typically more effective than the far-field thermal radiative exchange as the heat flux can increase up to several orders higher in magnitudes due to tunneling of evanescent waves. Such an interesting phenomenon has started to gain its popularity in nanotechnology, especially in nano-gap thermophotovoltaic systems and near-field radiative cooling of micro-/nano-devices. Here, we explored the existence of thermal gradient within an n-doped silicon thin film when it is subjected to intensive near-field thermal radiative heating. The near-field radiative power density deposited within the film is calculated using the Maxwell equations combined with fluctuational electrodynamics. A phonon Monte Carlo simulation is then used to assess the temperature gradient by treating the near-field radiative power density as the heat source. Results indicated that it is improbable to have temperature gradient with the near-field radiative heating as a continuous source unless the source comprises of ultra-short radiative pulses with a strong power density. - Highlights: • This study investigates temperature distribution in an n-doped silicon thin film. • Near-field radiative heating is treated as a volumetric phenomenon. • The temperature gradient is computed using phonon MC simulation. • Temperature of thin film can be approximated as uniform for radiation calculations. • If heat source is a pulsed radiation, a temperature gradient can be established

  15. Structurally controlled deposition of silicon onto nanowires

    Science.gov (United States)

    Wang, Weijie; Liu, Zuqin; Han, Song; Bornstein, Jonathan; Stefan, Constantin Ionel

    2018-03-20

    Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon coating is provided. The silicon coating may include a non-conformal, more porous layer and a conformal, denser layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes, e.g., a PECVD layer to deposit the non-conformal layer and a thermal CVD process to deposit the conformal layer, are used. Anodes including the nanostructures have longer cycle lifetimes than anodes made using either a PECVD or thermal CVD method alone.

  16. Stress and phase changes in a low-thermal-expansion Al-3at.%Ge alloy film on oxidized silicon wafers

    International Nuclear Information System (INIS)

    Tu, K.N.; Rodbell, K.P.; Herd, S.R.; Mikalsen, D.J.

    1993-01-01

    The alloy of Al-3at.%Ge has been found to have a low thermal expansion and contraction in the temperature range of room temperature to 400 C. The reason for the low thermal contraction (or expansion) is the precipitation (or dissolution) of Ge in the alloy. The Ge precipitates have a diamond structure in which each Ge atom occupies a much larger atomic volume than a Ge atom dissolved substitutionally in Al. The volume difference compensates for the effect of thermal expansion and contraction with changing temperature which in turn reduces the thermal stress due to thermal mismatch. The technique of wafer bending was used to determine the stress of the alloy film on oxidized silicon wafers upon thermal cycling; indeed, it is much lower than that of pure Al on identical wafers. The morphology of precipitation and dissolution of Ge in Al has been studied by transmission and scanning electron microscopy. It is found that the precipitation follows a discontinuous mode and occurs predominantly along grain boundaries. In dissolving the Ge precipitates into Al, voids are left behind because of the volume difference. It is proposed that this may explain the enhancement of nucleation of voids in the alloy film upon thermal cycling. (orig.)

  17. High current pulsed positron microprobe

    International Nuclear Information System (INIS)

    Howell, R.H.; Stoeffl, W.; Kumar, A.; Sterne, P.A.; Cowan, T.E.; Hartley, J.

    1997-01-01

    We are developing a low energy, microscopically focused, pulsed positron beam for defect analysis by positron lifetime spectroscopy to provide a new defect analysis capability at the 10 10 e + s -l beam at the Lawrence Livermore National Laboratory electron linac. When completed, the pulsed positron microprobe will enable defect specific, 3-dimensional maps of defect concentrations with sub-micron resolution of defect location. By coupling these data with first principles calculations of defect specific positron lifetimes and positron implantation profiles we will both map the identity and concentration of defect distributions

  18. Efficient Cryosolid Positron Moderators

    Science.gov (United States)

    2012-08-01

    table layout Figure 21 shows the integration of the IR spectroscopy optics with the positron Moderation and Annihilation vacuum chambers on the...Characterization of Cryogenic Moderators The application of Matrix Isolation Spectroscopy (MIS) to characterizing cryogenic solid positron ...Matrix Isolation Spectroscopy capability into our Positron Moderation apparatus, which enables spectroscopic characterization of the cryogenic

  19. Positron annihilation in a metal-oxide semiconductor studied by using a pulsed monoenergetic positron beam

    Science.gov (United States)

    Uedono, A.; Wei, L.; Tanigawa, S.; Suzuki, R.; Ohgaki, H.; Mikado, T.; Ohji, Y.

    1993-12-01

    The positron annihilation in a metal-oxide semiconductor was studied by using a pulsed monoenergetic positron beam. Lifetime spectra of positrons were measured as a function of incident positron energy for a polycrystalline Si(100 nm)/SiO2(400 nm)/Si specimen. Applying a gate voltage between the polycrystalline Si film and the Si substrate, positrons implanted into the specimen were accumulated at the SiO2/Si interface. From the measurements, it was found that the annihilation probability of ortho-positronium (ortho-Ps) drastically decreased at the SiO2/Si interface. The observed inhibition of the Ps formation was attributed to an interaction between positrons and defects at the SiO2/Si interface.

  20. Process for making silicon from halosilanes and halosilicons

    Science.gov (United States)

    Levin, Harry (Inventor)

    1988-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  1. Splitting of the spectral radiation density maximum for relativistic positrons moving through a single crystal near the crystallographic axis

    International Nuclear Information System (INIS)

    Adejshvili, D.I.; Anufriev, O.V.; Bochek, G.L.; Vit'ko, V.I.; Kovalenko, G.D.; Nikolajchuk, L.I.; Khizhnyak, N.A.; Shramenko, B.I.

    1986-01-01

    The fast particle radiation is studied on the basis of the periodic potential model which takes into account the discrete structure of atomic strings or planes along the channel direction. Results of the experiments on the linear accelerator on radiation of relativistic 1035 and 1050 MeV positrons in the diamond (axis 110) and silicon (axis 111) single crystals, respectively, are in good agreement with calculated data

  2. Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2015-12-14

    Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

  3. Thermal shock investigation of silicon nitride

    International Nuclear Information System (INIS)

    Ziegler, G.; Leucht, R.

    1977-01-01

    In this work, the thermal shock properties of commercial reaction-bonded Si 3 N 4 quality material (RBSN), of commercial hot-pressed Si 3 N 4 (HPSN) and of different laboratory grades of hot-pressed Si 3 N 4 were examined. The thermal shock properties of RBSN quality material differ according to the structure considerably: The critical temperature difference for sample crossections of 5 x 5 or 6 x 6 mm after quenching in oil lies between 730 0 C and over 1400 0 C. The best thermal shock properties are shown by high density RBSN quality material having very fine pores and high initial strength. The results indicate that for RBSN large pores and density inhomogenities are responsible for bad thermal shock properties. Resistance to fast temperature change is higher for hot-pressed Si 3 N 4 than for RBSN quality material. In HPSN, the thermal shock results show dependence on structure. High MgO content and the associated coarse rod-shaped configuration of the β phase and structural inhomogenities affect the thermal shock properties in an adverse way. (orig.) [de

  4. Study of material properties important for an optical property modulation-based radiation detection method for positron emission tomography

    OpenAIRE

    Tao, Li; Daghighian, Henry M.; Levin, Craig S.

    2017-01-01

    We compare the performance of two detector materials, cadmium telluride (CdTe) and bismuth silicon oxide (BSO), for optical property modulation-based radiation detection method for positron emission tomography (PET), which is a potential new direction to dramatically improve the annihilation photon pair coincidence time resolution. We have shown that the induced current flow in the detector crystal resulting from ionizing radiation determines the strength of optical modulation signal. A large...

  5. Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

    Energy Technology Data Exchange (ETDEWEB)

    Mondon, A., E-mail: andrew.mondon@ise.fraunhofer.de [Fraunhofer ISE, Heidenhofst. 2, D-79110 Freiburg (Germany); Wang, D. [Karlsruhe Nano Micro Facility (KNMF), H.-von-Helmholz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany); Zuschlag, A. [Universität Konstanz FB Physik, Jacob-Burckhardt-Str. 27, D-78464 Konstanz (Germany); Bartsch, J.; Glatthaar, M.; Glunz, S.W. [Fraunhofer ISE, Heidenhofst. 2, D-79110 Freiburg (Germany)

    2014-12-30

    Highlights: • Adhesion of metallization of fully plated nickel–copper contacts on silicon solar cells can be achieved by formation of nickel silicide at the cost of degraded cell performance. • Understanding of silicide growth mechanisms and controlled growth may lead to high performance together with excellent adhesion. • Silicide formation is well known from CMOS production from PVD-Ni on flat surfaces. Yet the deposition methods and therefore layer characteristics and the surface topography are different for plated metallization. • TEM analysis is performed for differently processed samples. • A nickel silicide growth model is created for plated Ni on textured silicon solar cells. - Abstract: In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel–silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide

  6. 22 Na positron source for annihilation positron spectroscopy

    International Nuclear Information System (INIS)

    Cimpeanu, Catalina; Craciun, L.; Dragulescu, E.; Dudu, D.; Racolta, P.M.; Voiculescu, Dana; Miron, N.

    2002-01-01

    To extend the nuclear physics applications and to perform the study of vacancy - type defects in metals, semiconductors, polymers etc., we decided to promote positron annihilation techniques. In order to achieve this goal we started a project of dedicated positron sources produced at the IFIN-HH U-120 Cyclotron. We have used the nuclear reaction 24 Mg(d,α) 22 Na and deuterons of 13 MeV energy. The paper presents the main steps of this procedure like: general conditions required for 22 NaCl sources, reactive chamber and characteristics of Mg target, parameters for the irradiation, radiochemical procedures to separate Na from Mg after the irradiation and geometrical or mechanical requirements for dedicated NaCl source for positron annihilation spectrometry. In the e + lifetime measurements the e + 'death - stop' signals are always provided by γ - quanta generated by the e + e - annihilation and the 'birth - start' signals may be obtained from 'prompt' γ - quanta emitted from the NaCl source (the 1.275 MeV photons). The 22 NaCl stock solution obtained by radiochemical separation will be kept in the sealed quartz vials in dry places and will be dropped between the studied materials before use in positron spectrometry. (authors)

  7. Oxide film assisted dopant diffusion in silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

    2010-10-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  8. Oxide film assisted dopant diffusion in silicon carbide

    International Nuclear Information System (INIS)

    Tin, Chin-Che; Mendis, Suwan; Chew, Kerlit; Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin; Atabaev, Bakhtiyar; Adedeji, Victor; Rusli

    2010-01-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  9. Silicon deposition in nanopores using a liquid precursor

    Science.gov (United States)

    Masuda, Takashi; Tatsuda, Narihito; Yano, Kazuhisa; Shimoda, Tatsuya

    2016-11-01

    Techniques for depositing silicon into nanosized spaces are vital for the further scaling down of next-generation devices in the semiconductor industry. In this study, we filled silicon into 3.5-nm-diameter nanopores with an aspect ratio of 70 by exploiting thermodynamic behaviour based on the van der Waals energy of vaporized cyclopentasilane (CPS). We originally synthesized CPS as a liquid precursor for semiconducting silicon. Here we used CPS as a gas source in thermal chemical vapour deposition under atmospheric pressure because vaporized CPS can fill nanopores spontaneously. Our estimation of the free energy of CPS based on Lifshitz van der Waals theory clarified the filling mechanism, where CPS vapour in the nanopores readily undergoes capillary condensation because of its large molar volume compared to those of other vapours such as water, toluene, silane, and disilane. Consequently, a liquid-specific feature was observed during the deposition process; specifically, condensed CPS penetrated into the nanopores spontaneously via capillary force. The CPS that filled the nanopores was then transformed into solid silicon by thermal decomposition at 400 °C. The developed method is expected to be used as a nanoscale silicon filling technology, which is critical for the fabrication of future quantum scale silicon devices.

  10. The correlations of electrochromism and thermochromism of tungsten oxide films studied by slow positron beam

    International Nuclear Information System (INIS)

    Ma Chuangxin; Zhou Chunlan; Zhang Zhiming; Wang Baoyi; Wei Long

    2004-01-01

    Electrochromic (EC) and thermochromic (TC) tungsten oxide (WO 3 ) films, deposited by magnetron sputtering and vacuum thermal evaporation, were studied systematically by means of slow positron measurements. The S parameters of colored amorphous WO 3 film and crystalline WO 3 film behaved quite similarly in the processes of thermochromism and electrochromism, little influenced by the different deposition methods. It indicates that the coloration processes under various external conditions are correlated with each other. It also shows that the slow positron beam technique may play a particular role in the study of chromogenic materials. (orig.)

  11. Thermal resistor on the base of silicon and some polymer semiconductors

    International Nuclear Information System (INIS)

    Marupov, R.; Kasimov, Sh.T.; Achilov, T.Kh.; Karimov, Kh.S.; Akhmedov, Kh.M.

    1995-01-01

    The purpose of present work is investigation electrical properties ofthermal resistors which was made from second cast poly-crystal silicon,poly-carbazole, and compositions of poly-crystal silicon and poly-carbazole

  12. Survey of elemental specificity in positron annihilation peak shapes

    Science.gov (United States)

    Myler, U.; Simpson, P. J.

    1997-12-01

    Recently the detailed interpretation of positron-annihilation γ-ray peak shapes has proven to be of interest with respect to their chemical specificity. In this contribution, we show highly resolved spectra for a number of different elements. To this purpose, annihilation spectra with strongly reduced background intensities were recorded in the two detector geometry, using a variable-energy positron beam. Division of the subsequently normalized spectra by a standard spectrum (in our case the spectrum of pure silicon) yields quotient spectra, which display features characteristic of the sample material. First we ascertain that the specific spectrum of an element is conserved in different chemical compounds, demonstrated here by identical oxygen spectra obtained from both SiO2/Si and MgO/Mg. Second, we show highly resolved spectra for a number of different elements (Fe...Zn, Ag, Ir...Au). We show that the characteristic features in these spectra vary in a systematic fashion with the atomic number of the element and can be tentatively identified with particular orbitals. Finally, for 26 different elements we compare the maximum intensity in the quotient spectra with the relative atomic density in the corresponding element. To our knowledge, this is the most comprehensive survey of such data made to date.

  13. Solid state MEMS devices on flexible and semi-transparent silicon (100) platform

    KAUST Repository

    Ahmed, Sally; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2014-01-01

    We report fabrication of MEMS thermal actuators on flexible and semi-transparent silicon fabric released from bulk silicon (100). We fabricated the devices first and then released the top portion of the silicon (≈ 19 μm) which is flexible and semi-transparent. We also performed chemical mechanical polishing to reuse the remaining wafer. A tested thermal actuator with 3 μm wide 240 μm hot arm and 10 μm wide 185 μm long cold arm deflected by 1.7 μm at 1 V. The fabricated thermal actuators exhibit similar performance before and after bending. We believe the demonstrated process will expand the horizon of flexible electronics into MEMS world devices. © 2014 IEEE.

  14. Positron Beam Characteristics at NEPOMUC Upgrade

    Science.gov (United States)

    Hugenschmidt, C.; Ceeh, H.; Gigl, T.; Lippert, F.; Piochacz, C.; Reiner, M.; Schreckenbach, K.; Vohburger, S.; Weber, J.; Zimnik, S.

    2014-04-01

    In 2012, the new neutron induced positron source NEPOMUC upgrade was put into operation at FRMII. Major changes have been made to the source which consists of a neutron-γ-converter out of Cd and a Pt foil structure for electron positron pair production and positron moderation. The new design leads to an improvement of both intensity and brightness of the mono-energetic positron beam. In addition, the application of highly enriched 113Cd as neutron-γ-converter extends the lifetime of the positron source to 25 years. A new switching and remoderation device has been installed in order to allow toggling from the high-intensity primary beam to a brightness enhanced remoderated positron beam. At present, an intensity of more than 109 moderated positrons per second is achieved at NEPOMUC upgrade. The main characteristics are presented which comprise positron yield and beam profile of both the primary and the remoderated positron beam.

  15. Investigation of transient thermal dissipation in thinned LSI for advanced packaging

    Science.gov (United States)

    Araga, Yuuki; Shimamoto, Haruo; Melamed, Samson; Kikuchi, Katsuya; Aoyagi, Masahiro

    2018-04-01

    Thinning of LSI is necessary for superior form factor and performance in dense cutting-edge packaging technologies. At the same time, degradation of thermal characteristics caused by the steep thermal gradient on LSIs with thinned base silicon is a concern. To manage a thermal environment in advanced packages, thermal characteristics of the thinned LSIs must be clarified. In this study, static and dynamic thermal dissipations were analyzed before and after thinning silicon to determine variations of thermal characteristics in thinned LSI. Measurement results revealed that silicon thinning affects dynamic thermal characteristics as well as static one. The transient variations of thermal characteristics of thinned LSI are precisely verified by analysis using an equivalent model based on the thermal network method. The results of analysis suggest that transient thermal characteristics can be easily estimated by employing the equivalent model.

  16. Positron emission tomography

    International Nuclear Information System (INIS)

    Wienhard, K.; Heiss, W.D.

    1984-01-01

    The principles and selected clinical applications of positron emission tomography are described. In this technique a chemical compound is labeled with a positron emitting isotope and its biochemical pathway is traced by coincidence detection of the two annihilation photons. The application of the techniques of computed tomography allows to reconstruct the spatial distribution of the radioactivity within a subject. The 18 F-deoxyglucose method for quantitative measurement of local glucose metabolism is discussed in order to illustrate the possibilities of positron emission tomography to record physiological processes in vivo. (orig.) [de

  17. Preparation and characterization of flame retardant n-hexadecane/silicon dioxide composites as thermal energy storage materials.

    Science.gov (United States)

    Fang, Guiyin; Li, Hui; Chen, Zhi; Liu, Xu

    2010-09-15

    Flame retardant n-hexadecane/silicon dioxide (SiO(2)) composites as thermal energy storage materials were prepared using sol-gel methods. In the composites, n-hexadecane was used as the phase change material for thermal energy storage, and SiO(2) acted as the supporting material that is fire resistant. In order to further improve flame retardant property of the composites, the expanded graphite (EG) was added in the composites. Fourier transformation infrared spectroscope (FT-IR), X-ray diffractometer (XRD) and scanning electronic microscope (SEM) were used to determine chemical structure, crystalloid phase and microstructure of flame retardant n-hexadecane/SiO(2) composites, respectively. The thermal properties and thermal stability were investigated by a differential scanning calorimeter (DSC) and a thermogravimetric analysis apparatus (TGA), respectively. The SEM results showed that the n-hexadecane was well dispersed in the porous network of the SiO(2). The DSC results indicated that the melting and solidifying latent heats of the composites are 147.58 and 145.10 kJ/kg when the mass percentage of the n-hexadecane in the composites is 73.3%. The TGA results showed that the loading of the EG increased the charred residue amount of the composites at 700 degrees C, contributing to the improved thermal stability of the composites. It was observed from SEM photographs that the homogeneous and compact charred residue structure after combustion improved the flammability of the composites. Copyright 2010 Elsevier B.V. All rights reserved.

  18. Application of mathematical removal of positron range blurring in positron emission tomography

    International Nuclear Information System (INIS)

    Haber, S.F.; Derenzo, S.E.; Uber, D.

    1990-01-01

    The range of positrons in tissue is an important limitation to the ultimate spatial resolution achievable in positron emission tomography. In this work the authors have applied a Fourier deconvolution technique to remove range blurring in images taken by the Donner 600-crystal positron tomograph. Using phantom data, the authors have found significant improvement in the image quality and the FWHM for both 68 Ga and 82 Rb. These were successfully corrected so that the images and FWHM almost matched those of 18 F which has negligible positron range. However, statistical noise was increased by the deconvolution process and it was not practical to recover the full spatial resolution of the tomograph

  19. Measurement of the positron to electron ratio in the cosmic rays above 5 GeV

    International Nuclear Information System (INIS)

    Golden, R.L.; Stochaj, S.J.; Stephens, S.A.; Aversa, F.; Barbiellini, G.; Boezio, M.; Bravar, U.; Colavita, A.; Fratnik, F.

    1995-12-01

    As part of a series of experiments to search for antimatter in cosmic rays, the NMSU balloon-borne magnet spectrometer was configured for a flight to study positrons. Two completely new instruments, a transition radiation detector and a silicon-tungsten imaging calorimeter, were added to the magnet spectrometer. These two detectors provided a proton rejection factor better than (3) (10) 4 . This instrument was flown from Fort Sumner, NM at an average depth of 4.5 g/cm 2 of residual atmosphere for a period of 25 hours. The paper reports the measured fraction of positrons e + /e + +e - from about 5 to 60 GeV at the top of the atmosphere. The measurements do not show any compelling evidence for an increase in this ratio with energy and the results are consistent with a constant fraction of 0.78±0.016 over the entire region

  20. Positron Annihilation in Insulating Materials

    International Nuclear Information System (INIS)

    Asoka-Kumar, P; Sterne, PA

    2002-01-01

    We describe positron results from a wide range of insulating materials. We have completed positron experiments on a range of zeolite-y samples, KDP crystals, alkali halides and laser damaged SiO 2 . Present theoretical understanding of positron behavior in insulators is incomplete and our combined theoretical and experimental approach is aimed at developing a predictive understanding of positrons and positronium annihilation characteristics in insulators. Results from alkali halides and alkaline-earth halides show that positrons annihilate with only the halide ions, with no apparent contribution from the alkali or alkaline-earth cations. This contradicts the results of our existing theory for metals, which predicts roughly equal annihilation contributions from cation and anion. We also present result obtained using Munich positron microprobe on laser damaged SiO 2 samples

  1. Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies

    DEFF Research Database (Denmark)

    Mäkinen, S.; Rajainmäki, H.; Linderoth, Søren

    1991-01-01

    High-purity single-crystal samples of float-zoned Si have been implanted with 6.95-MeV protons and with 25-MeV 3He2 ions at 15 K, and the positron-lifetime technique has been used to identify the defects created in the samples, and to study the effects of H and He on the annealing of point defects...... in Si. The results have been compared with those of proton-irradiated Si. A 100–300-K annealing stage was clearly observed in hydrogen (H+) -implanted Si, and this stage was almost identical to that in the p-irradiated Si. The final annealing state of the H+-implanted Si started at about 400 K......, and it is connected to annealing out of negatively charged divacancy-oxygen pairs. This stage was clearly longer than that for the p-irradiated Si, probably due to the breakup of Si-H bonds at about 550 K. The 100-K annealing stage was not seen with the He-implanted samples. This has been explained by assuming...

  2. Exploring of defects in He+ implanted Si(100) by slow positron beam

    International Nuclear Information System (INIS)

    Zhang Tianhao; Weng Huimin; Fan Yangmei; Du Jiangfeng; Zhou Xianyi; Han Rongdian; Zhang Miao; Lin Chenglu

    2001-01-01

    Si(100) crystal implanted by 5 x 10 16 cm -2 , 140 keV He + was probed by slow positron beam, and defect distribution along depth was obtained from the relation between S parameter and positron incidence energy. The near surface region of implanted sample was only slightly damaged. Small vacancies and vacancy clusters less than 1 nm in diameter were the dominant defects, while the deeper region around the He + projected range was heavily damaged and had dense larger helium micro-bubbles and microvoids. Thermal anneal study at different temperatures showed that low temperature annealing could remove most vacancy-type defects effectively. However, annealing at high temperature enlarged the diameters of micro-bubbles and microvoids

  3. Applications of slow positrons to cancer research: Search for selectivity of positron annihilation to skin cancer

    International Nuclear Information System (INIS)

    Jean, Y.C.; Li Ying; Liu Gaung; Chen, Hongmin; Zhang Junjie; Gadzia, Joseph E.

    2006-01-01

    Slow positrons and positron annihilation spectroscopy (PAS) have been applied to medical research in searching for positron annihilation selectivity to cancer cells. We report the results of positron lifetime and Doppler broadening energy spectroscopies in human skin samples with and without cancer as a function of positron incident energy (up to 8 μm depth) and found that the positronium annihilates at a significantly lower rate and forms at a lower probability in the samples having either basal cell carcinoma (BCC) or squamous cell carcinoma (SCC) than in the normal skin. The significant selectivity of positron annihilation to skin cancer may open a new research area of developing positron annihilation spectroscopy as a novel medical tool to detect cancer formation externally and non-invasively at the early stages

  4. Applications of slow positrons to cancer research: Search for selectivity of positron annihilation to skin cancer

    Energy Technology Data Exchange (ETDEWEB)

    Jean, Y.C. [Department of Chemistry, University of Missouri-Kansas City, 205 Spenscer Chemistry Building, 5009 Rockhill Road, Kansas City, MO 64110 (United States)]. E-mail: jeany@umkc.edu; Li Ying [Department of Chemistry, University of Missouri-Kansas City, 205 Spenscer Chemistry Building, 5009 Rockhill Road, Kansas City, MO 64110 (United States); Liu Gaung [Department of Chemistry, University of Missouri-Kansas City, 205 Spenscer Chemistry Building, 5009 Rockhill Road, Kansas City, MO 64110 (United States); Chen, Hongmin [Department of Chemistry, University of Missouri-Kansas City, 205 Spenscer Chemistry Building, 5009 Rockhill Road, Kansas City, MO 64110 (United States); Zhang Junjie [Department of Chemistry, University of Missouri-Kansas City, 205 Spenscer Chemistry Building, 5009 Rockhill Road, Kansas City, MO 64110 (United States); Gadzia, Joseph E. [Dermatology, Department of Internal Medicine, University of Kansas Medical Center, Kansas City, KS 66103 (United States); Kansas Medical Clinic, Topeka, KS 66614 (United States)

    2006-02-28

    Slow positrons and positron annihilation spectroscopy (PAS) have been applied to medical research in searching for positron annihilation selectivity to cancer cells. We report the results of positron lifetime and Doppler broadening energy spectroscopies in human skin samples with and without cancer as a function of positron incident energy (up to 8 {mu}m depth) and found that the positronium annihilates at a significantly lower rate and forms at a lower probability in the samples having either basal cell carcinoma (BCC) or squamous cell carcinoma (SCC) than in the normal skin. The significant selectivity of positron annihilation to skin cancer may open a new research area of developing positron annihilation spectroscopy as a novel medical tool to detect cancer formation externally and non-invasively at the early stages.

  5. A thermal model for amorphous silicon photovoltaic integrated in ETFE cushion roofs

    International Nuclear Information System (INIS)

    Zhao, Bing; Chen, Wujun; Hu, Jianhui; Qiu, Zhenyu; Qu, Yegao; Ge, Binbin

    2015-01-01

    Highlights: • A thermal model is proposed to estimate temperature of a-Si PV integrated in ETFE cushion. • Nonlinear equation is solved by Runge–Kutta method integrated in a new program. • Temperature profiles varying with weather conditions are obtained and analyzed. • Numerical results are in good line with experimental results with coefficients of 0.821–0.985. • Reasons for temperature difference of 0.9–4.6 K are solar irradiance and varying parameters. - Abstract: Temperature characteristics of amorphous silicon photovoltaic (a-Si PV) integrated in building roofs (e.g. the ETFE cushions) are indispensible for evaluating the thermal performances of a-Si PV and buildings. To investigate the temperature characteristics and temperature value, field experiments and numerical modeling were performed and compared in this paper. An experimental mock-up composed of a-Si PV and a three-layer ETFE cushion structure was constructed and experiments were carried out under four typical weather conditions (winter sunny, winter cloudy, summer sunny and summer cloudy). The measured solar irradiance and air temperature were used as the real weather conditions for the thermal model. On the other side, a theoretical thermal model was developed based on energy balance equation which was expressed as that absorbed energy was equal to converted energy and energy loss. The corresponding differential equation of PV temperature varying with weather conditions was solved by the Runge–Kutta method. The comparisons between the experimental and numerical results were focusing on the temperature characteristics and temperature value. For the temperature characteristics, good agreement was obtained by correlation analysis with the coefficients of 0.821–0.985, which validated the feasibility of the thermal model. For the temperature value, the temperature difference between the experimental and numerical results was only 0.9–4.6 K and the reasons could be the dramatical

  6. High aspect ratio silicon nanomoulds for UV embossing fabricated by directional thermal oxidation using an oxidation mask

    International Nuclear Information System (INIS)

    Chen, L Q; Chan-Park, Mary B; Yan, Y H; Zhang Qing; Li, C M; Zhang Jun

    2007-01-01

    Nanomoulding is simple and economical but moulds with nanoscale features are usually prohibitively expensive to fabricate because nanolithographic techniques are mostly serial and time-consuming for large-area patterning. This paper describes a novel, simple and inexpensive parallel technique for fabricating nanoscale pattern moulds by silicon etching followed by thermal oxidation. The mask pattern can be made by direct photolithography or photolithography followed by metal overetching for submicron- and nanoscale features, respectively. To successfully make nanoscale channels having a post-oxidation cross-sectional shape similar to that of the original channel, an oxidation mask to promote unidirectional (specifically horizontal) oxide growth is found to be essential. A silicon nitride or metal mask layer prevents vertical oxidation of the Si directly beneath it. Without this mask, rectangular channels become smaller but are V-shaped after oxidation. By controlling the silicon etch depth and oxidation time, moulds with high aspect ratio channels having widths ranging from 500 to 50 nm and smaller can be obtained. The nanomould, when passivated with a Teflon-like layer, can be used for first-generation replication using ultraviolet (UV) nanoembossing and second-generation replication in other materials, such as polydimethylsiloxane (PDMS). The PDMS stamp, which was subsequently coated with Au, was used for transfer printing of Au electrodes with a 600 nm gap which will find applications in plastics nanoelectronics

  7. Positron lifetime measurements and positron-annihilation induced auger electron spectroscpy using slow positron beams; Teisoku yodenshi bimu wo mochiita yodenshi jumyo sokutei oyobi yodenshi shometsu reiki oje denshi bunko

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, R. [Electrotechnical Lab., Tsukuba (Japan)

    1996-02-20

    Slow positron beam with less than several eV can be controlled freely such as accelerating, throttling the beam size, shortening the pulse or making pulse with short time width and so forth. These low positron beams are applied to various measurements like Doppler broadening measurement of annihilation {gamma} rays or lifetime measurement of positron, and secondary particle measurements using positron microscope, positron electron ray diffraction, flight time method and so forth. In particular, these recent years, high intensity slow positron beams were possible using accelerators like electron linac and its application is increasing. In this report, pulse shortening method for high intensity slow positron beam, and incidence energy variable positron lifetime measurement method using this slow pulsed beam and flight time type positron-annihilation-induced auger electron spectroscopy are outlined. In future, these measurements can be possible to carry out with high resolution and also with high counting rate if higher intensity monochromatic excellent positron beam than present one is produced. 31 refs., 5 figs.

  8. High-Tc superconducting antenna-coupled microbolometer on silicon

    Science.gov (United States)

    Rice, Joseph P.; Grossman, Erich N.; Borcherdt, L. J.; Rudman, D. A.

    1994-05-01

    A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-Tc superconductor YBa2Cu3O7 (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 X 10-6 W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 microsecond(s) , a responsivity of the 1000 V/W range, and a noise-equivalent power in the 10-12 W/Hz1/2 range at 1000 Hz.

  9. LLNL pure positron plasma program

    International Nuclear Information System (INIS)

    Hartley, J.H.; Beck, B.R.; Cowan, T.E.; Howell, R.H.; McDonald, J.L.; Rohatgi, R.R.; Fajans, J.; Gopalan, R.

    1995-01-01

    Assembly and initial testing of the Positron Time-of-Flight Trap at the Lawrence Livermore National Laboratory (LLNL) Increase Pulsed Positron Facility has been completed. The goal of the project is to accumulate at high-density positron plasma in only a few seconds., in order to facilitate study that may require destructive diagnostics. To date, densities of at least 6 x 10 6 positrons per cm 3 have been achieved

  10. Temperature detectors on irradiated silicon base

    International Nuclear Information System (INIS)

    Karimov, M.; Dzhalelov, M.A.; Kurbanov, A.O.

    2005-01-01

    It is well known, that the most suitable for thermal resistors production is compensated silicon with impurities forming deep lying in forbidden zone, having big negative resistance temperature coefficients (RTC). In the capacity of initial materials for thermal resistors with negative RTC the n-type monocrystalline silicon with specific resistance ∼30 Ω·cm at 300 K is applied. Before the irradiation the phosphorus diffusion is realizing at temperature ∼1000 deg. C for 10 min. Irradiation is putting into practise by WWR-SM reactor fast neutrons within the range (7-10)·10 13 cm -2 . The produced resistors have nominal resistance range (8-20)·10 3 Ω·cm, coefficient of the thermal sensitivity B=4000-6000 deg. C., RTC α 300K =4-6.6 %/grad. It is shown, that offered method allows to obtain same type resistors characteristics on the base of neutron-irradiated material

  11. Study of Silicon/silicon, Silicon/silicon Dioxide, and Metal-Oxide

    Science.gov (United States)

    Leung, To Chi

    A variable-energy positron beam is used to study Si/Si, Si/SiO_2, and metal-oxide -semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300^circC) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO_2. Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO_2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C -V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO_2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties.

  12. Preparation and properties of lauric acid/silicon dioxide composites as form-stable phase change materials for thermal energy storage

    International Nuclear Information System (INIS)

    Fang Guiyin; Li Hui; Liu Xu

    2010-01-01

    Form-stable lauric acid (LA)/silicon dioxide (SiO 2 ) composite phase change materials were prepared using sol-gel methods. The LA was used as the phase change material for thermal energy storage, with the SiO 2 acting as the supporting material. The structural analysis of these form-stable LA/SiO 2 composite phase change materials was carried out using Fourier transformation infrared spectroscope (FT-IR). The microstructure of the form-stable composite phase change materials was observed by a scanning electronic microscope (SEM). The thermal properties and thermal stability were investigated by a differential scanning calorimeter (DSC) and a thermogravimetric analysis apparatus (TGA), respectively. The SEM results showed that the LA was well dispersed in the porous network of SiO 2 . The DSC results indicated that the melting latent heat of the form-stable composite phase change material is 117.21 kJ kg -1 when the mass percentage of the LA in the SiO 2 is 64.8%. The results of the TGA showed that these materials have good thermal stability. The form-stable composite phase change materials can be used for thermal energy storage in waste heat recovery and solar heating systems.

  13. High resolution positron tomography

    International Nuclear Information System (INIS)

    Brownell, G.L.; Burnham, C.A.

    1982-01-01

    The limits of spatial resolution in practical positron tomography are examined. The four factors that limit spatial resolution are: positron range; small angle deviation; detector dimensions and properties; statistics. Of these factors, positron range may be considered the fundamental physical limitation since it is independent of instrument properties. The other factors are to a greater or lesser extent dependent on the design of the tomograph

  14. Development of real time personal neutron dosimeter with two silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, T.; Tsujimura, N. [Tohoku Univ., Cyclotron and Radioisotope Center, Aoba, Aramaki, Aoba-ku (Japan); Yamano, T. [Tokyo Factory, Fuji Electric Co. Ltd., Tokyo (Japan)

    1992-07-01

    We developed a real time personal neutron dosimeter by using two types of silicon p-n junction detectors, thermal neutron sensor and fast neutron sensor. The thermal neutron sensor which is {sup 10}B doped n-type silicon with a polyethylene radiator mainly counts neutrons of energy front thermal to I MeV, and the fast neutron sensor which is p-type silicon with a polyethylene radiator is sensitive to neutrons above I MeV. The neutron sensitivity measurements revealed that the dosimeter has a rather flat response for dose equivalent from thermal to 15 MeV, excluding a drop from 50 keV to I MeV. In order to get conversion factor from counts to dose equivalent as accurately as possible, we performed the field test of the dosimeter calibration in several neutron-generating fields. By introducing the two-group dose estimation method, this dosimeter can give the neutron dose equivalent within about 50% errors. (author)

  15. Positron emission tomography

    NARCIS (Netherlands)

    Paans, AMJ

    Positron Emission Tomography (PET) is a method for determining biochemical and physiological processes in vivo in a quantitative way by using radiopharmaceuticals labelled with positron emitting radionuclides as C-11, N-13, O-15 and F-18 and by measuring the annihilation radiation using a

  16. Laser Soldering and Thermal Cycling Tests of Monolithic Silicon Pixel Chips

    CERN Document Server

    Strand, Frode Sneve

    2015-01-01

    An ALPIDE-1 monolithic silicon pixel sensor prototype has been laser soldered to a flex printed circuit using a novel interconnection technique using lasers. This technique is to be optimised to ensure stable, good quality connections between the sensor chips and the FPCs. To test the long-term stability of the connections, as well as study the effects on hit thresholds and noise in the sensor, it was thermally cycled in a climate chamber 1200 times. The soldered connections showed good qualities like even melting and good adhesion on pad/flex surfaces, and the chip remained in working condition for 1080 cycles. After this, a few connections failed, having cracks in the soldering tin, rendering the chip unusable. Threshold and noise characteristics seemed stable, except for the noise levels of sector 2 in the chip, for 1000 cycles in a temperature interval of "10^{\\circ}" and "50^{\\circ}" C. Still, further testing with wider temperature ranges and more cycles is needed to test the limitations of the chi...

  17. Silicon hybrid integration

    International Nuclear Information System (INIS)

    Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

    2011-01-01

    Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

  18. Positron confinement in embedded lithium nanoclusters

    Science.gov (United States)

    van Huis, M. A.; van Veen, A.; Schut, H.; Falub, C. V.; Eijt, S. W.; Mijnarends, P. E.; Kuriplach, J.

    2002-02-01

    Quantum confinement of positrons in nanoclusters offers the opportunity to obtain detailed information on the electronic structure of nanoclusters by application of positron annihilation spectroscopy techniques. In this work, positron confinement is investigated in lithium nanoclusters embedded in monocrystalline MgO. These nanoclusters were created by means of ion implantation and subsequent annealing. It was found from the results of Doppler broadening positron beam analysis that approximately 92% of the implanted positrons annihilate in lithium nanoclusters rather than in the embedding MgO, while the local fraction of lithium at the implantation depth is only 1.3 at. %. The results of two-dimensional angular correlation of annihilation radiation confirm the presence of crystalline bulk lithium. The confinement of positrons is ascribed to the difference in positron affinity between lithium and MgO. The nanocluster acts as a potential well for positrons, where the depth of the potential well is equal to the difference in the positron affinities of lithium and MgO. These affinities were calculated using the linear muffin-tin orbital atomic sphere approximation method. This yields a positronic potential step at the MgO||Li interface of 1.8 eV using the generalized gradient approximation and 2.8 eV using the insulator model.

  19. Thermal detection of single e-h pairs in a biased silicon crystal detector

    Science.gov (United States)

    Romani, R. K.; Brink, P. L.; Cabrera, B.; Cherry, M.; Howarth, T.; Kurinsky, N.; Moffatt, R. A.; Partridge, R.; Ponce, F.; Pyle, M.; Tomada, A.; Yellin, S.; Yen, J. J.; Young, B. A.

    2018-01-01

    We demonstrate that individual electron-hole pairs are resolved in a 1 cm2 by 4 mm thick silicon crystal (0.93 g) operated at ˜35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e- h+) pair in the crystal near the grid. The energy of the drifting charges is measured with a phonon sensor noise σ ˜0.09 e- h+ pair. The observed charge quantization is nearly identical for h+s or e-s transported across the crystal.

  20. Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Kirill O. Bugaev

    2012-01-01

    Full Text Available Vibrational properties of hydrogenated silicon-rich nitride (SiN:H of various stoichiometry (0.6≤≤1.3 and hydrogenated amorphous silicon (a-Si:H films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130∘C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

  1. Thermal stability of ultrasoft Fe-Zr-N films

    NARCIS (Netherlands)

    Chechenin, NG; van Veen, A; Schut, H; Chezan, AR; Boerma, D; Vystavel, T; De Hosson, JTM

    2003-01-01

    The thermal stability of nanocrystalline ultrasoft magnetic (Fe98Zr2)(1-x)N-x films with x = 0.10-0.25 was studied using thermal desorption spectrometry, positron beam analysis and high resolution transmission electron microscopy. The results demonstrate that grain growth during the heat treatment

  2. Thermalisation of high energy electrons and positrons in water vapour

    Science.gov (United States)

    Munoz, A.; Blanco, F.; Limao-Vieira, P.; Thorn, P. A.; Brunger, M. J.; Buckman, S. J.; Garcia, G.

    2008-07-01

    In this study we describe a method to simulate single electron tracks of electrons in molecular gases, particularly in water vapour, from relatively high energies, where Born (Inokuti 1971) approximation is supposed to be valid, down to thermal energies paying special attention to the low energy secondary electrons which are abundantly generated along the energy degradation procedure. Experimental electron scattering cross sections (Munoz et al. 2007) and energy loss spectra (Thorn et al. 2007) have been determined, where possible, to be used as input parameters of the simulating program. These experimental data have been complemented with optical potential calculation (Blanco and Garcia 2003) providing a complete set of interaction probability functions for each type of collision which could take place in the considered energy range: elastic, ionization, electronic excitation, vibrational and rotational excitation. From the simulated track structure (Munoz et al. 2005) information about energy deposition and radiation damage at the molecular level can be derived. A similar procedure is proposed to the study of single positron tracks in gases. Due to the lack of experimental data for positron interaction with molecules, especially for those related to energy loss and excitation cross sections, some distribution probability data have been derived from those of electron scattering by introducing positron characteristics as positroniun formation. Preliminary results for argon are presented discussing also the utility of the model to biomedical applications based on positron emitters.

  3. Positron annihilation characteristics of ODS and non-ODS EUROFER isochronally annealed

    International Nuclear Information System (INIS)

    Ortega, Y.; Castro, V. de; Monge, M.A.; Munoz, A.; Leguey, T.; Pareja, R.

    2008-01-01

    Yttrium oxide dispersion strengthened (ODS) and non-ODS EUROFER produced by mechanical alloying and hot isostatic pressing have been subjected to isochronal annealing up to 1523 K, and the evolution of the open-volume defects and their thermal stability have been investigated using positron lifetime and coincidence Doppler broadening (CDB) techniques. Transmission electron microscopy (TEM) observations have also been performed on the studied samples to verify the characteristics of the surviving defects after annealing at 1523 K. The CDB spectra of ODS EUROFER exhibit a characteristic signature that is attributed to positron annihilation in Ar-decorated cavities at the oxide particle/matrix interfaces. The variation of the positron annihilation parameters with the annealing temperature shows three stages: up to 623 K, between 823 and 1323 K, and above 1323 K. Three-dimensional vacancy clusters, or voids, are detected in either materials in as-HIPed condition and after annealing at T ≤ 623 K. In the temperature range 823-1323 K, these voids' growth and nucleation and the growth of other new species of voids take place. Above 1323 K, some unstable cavities start to anneal out, and cavities associated to oxide particles and other small precipitates survive to annealing at 1523 K. The TEM observations and the positron annihilation results indicate that these cavities should be decorated with Ar atoms absorbed during the mechanical alloying process

  4. Positron annihilation characteristics of ODS and non-ODS EUROFER isochronally annealed

    Energy Technology Data Exchange (ETDEWEB)

    Ortega, Y. [Departamento de Fisica, Universidad Carlos III de Madrid, 28911 Leganes (Spain)], E-mail: yanicet@fis.ucm.es; Castro, V. de; Monge, M.A.; Munoz, A.; Leguey, T.; Pareja, R. [Departamento de Fisica, Universidad Carlos III de Madrid, 28911 Leganes (Spain)

    2008-05-31

    Yttrium oxide dispersion strengthened (ODS) and non-ODS EUROFER produced by mechanical alloying and hot isostatic pressing have been subjected to isochronal annealing up to 1523 K, and the evolution of the open-volume defects and their thermal stability have been investigated using positron lifetime and coincidence Doppler broadening (CDB) techniques. Transmission electron microscopy (TEM) observations have also been performed on the studied samples to verify the characteristics of the surviving defects after annealing at 1523 K. The CDB spectra of ODS EUROFER exhibit a characteristic signature that is attributed to positron annihilation in Ar-decorated cavities at the oxide particle/matrix interfaces. The variation of the positron annihilation parameters with the annealing temperature shows three stages: up to 623 K, between 823 and 1323 K, and above 1323 K. Three-dimensional vacancy clusters, or voids, are detected in either materials in as-HIPed condition and after annealing at T {<=} 623 K. In the temperature range 823-1323 K, these voids' growth and nucleation and the growth of other new species of voids take place. Above 1323 K, some unstable cavities start to anneal out, and cavities associated to oxide particles and other small precipitates survive to annealing at 1523 K. The TEM observations and the positron annihilation results indicate that these cavities should be decorated with Ar atoms absorbed during the mechanical alloying process.

  5. Large volume cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Braggio, C.; Boscardin, M.; Bressi, G.; Carugno, G.; Corti, D.; Galeazzi, G.; Zorzi, N.

    2009-01-01

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm 3 , cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  6. Thermal phonon scattering in silicon doped with Li, P and Li-O; influence of the electronic structure of the impurities

    International Nuclear Information System (INIS)

    Fortier, Dominique.

    1976-07-01

    Besides the three phonon scattering mechanisms generally considered in insulators, i.e. boundary effect, isotopic scattering and phonon-phonon interaction, the electron-phonon scattering mechanism was studied with special reference to the scattering of thermal phonons by donor impurities in silicon. In order to demonstrate clearly the effect of the electronic structure of the impurity on this scattering, three donor centres were investigated: Li, Li-O and P. On the basis of the calculated relaxation times it was possible from theoretical analysis to account for the main results and to explain why the Li centre scatters thermal phonons more efficiently than Li-O and P centres in the isolated impurity range [fr

  7. Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication

    International Nuclear Information System (INIS)

    Lee, W.C.T.; Bishop, N.; Thompson, D.L.; Xue, K.; Scappucci, G.; Cederberg, J.G.; Gray, J.K.; Han, S.M.; Celler, G.K.; Carroll, M.S.; Simmons, M.Y.

    2013-01-01

    Highlights: ► Strained silicon-on-insulator (sSOI) samples were flash-annealed at high temperature under ultra-high vacuum conditions. ► The extend of surface strain relaxation depends on the annealing temperature with no strain relaxation observed below 1020 °C. ► A 2 × 1 reconstructed surface with low defect density can be achieved. ► The annealed sSOI surface shows enhanced step undulations due to the unique energetics caused by surface strain. - Abstract: We investigate the ability to reconstruct strained silicon-on-insulator (sSOI) substrates in ultra-high vacuum for use in atomic scale device fabrication. Characterisation of the starting sSOI substrate using μRaman shows an average tensile strain of 0.8%, with clear strain modulation in a crosshatch pattern across the surface. The surfaces were heated in ultra-high vacuum from temperatures of 900 °C to 1100 °C and subsequently imaged using scanning tunnelling microscopy (STM). The initial strain modulation on the surface is observed to promote silicon migration and the formation of crosshatched surface features whose height and pitch increases with increasing annealing temperature. STM images reveal alternating narrow straight S A steps and triangular wavy S B steps attributed to the spontaneous faceting of S B and preferential adatom attachment on S B under biaxial tensile strain. Raman spectroscopy shows that despite these high temperature anneals no strain relaxation of the substrate is observed up to temperatures of 1020 °C. Above 1100 °C, strain relaxation is evident but is confined to the surface.

  8. The processing and potential applications of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Syyuan Shieh.

    1992-07-01

    Stability of a cylindrical pore under the influence of surface energy is important for porous silicon (PS) processing in the integrated circuit industry. Once the zig-zag cylindrical pores of porous silicon or oxidized porous silicon (OPS) are unstable and breakup into rows of isolated spherical pores, oxidation of PS and densification/nitridation of OPS become difficult. Swing to difficulty transport of reactant gas (O{sub 2}, NH{sub 3}) or the trapped gas (for densification of OPS). A first order analysis of the stability of a cylindrical pore or cylinder is considered first. Growth of small sinusoidal perturbations by viscous flow or evaporation/condensation result in dependence of perturbation growth rate on perturbation wavelength. Rapid thermal oxidation (RTO) of porous silicon is proposed as an alternative for the tedious two-step 300 and 800C oxidation process. Transmission electron microscopy, energy dispersive spectroscopy ESCA are used for quality control. Also, rapid thermal nitridation of oxidized porous silicon in ammonia is proposed to enhance OPS resistance to HF solution. Pores breakup of OPS results in a trapped gas problem during densification. Wet helium is proposed as OPS densification ambient gas to shorten densification time. Finally, PS is proposed to be an extrinsic gettering center in silicon wafers. The suppression of oxidation-induced stacking faults is used to demonstrate the gettering ability. Possible mechanism is discussed.

  9. The processing and potential applications of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Shieh, Syyuan [Univ. of California, Berkeley, CA (United States)

    1992-07-01

    Stability of a cylindrical pore under the influence of surface energy is important for porous silicon (PS) processing in the integrated circuit industry. Once the zig-zag cylindrical pores of porous silicon or oxidized porous silicon (OPS) are unstable and breakup into rows of isolated spherical pores, oxidation of PS and densification/nitridation of OPS become difficult. Swing to difficulty transport of reactant gas (O2, NH3) or the trapped gas (for densification of OPS). A first order analysis of the stability of a cylindrical pore or cylinder is considered first. Growth of small sinusoidal perturbations by viscous flow or evaporation/condensation result in dependence of perturbation growth rate on perturbation wavelength. Rapid thermal oxidation (RTO) of porous silicon is proposed as an alternative for the tedious two-step 300 and 800C oxidation process. Transmission electron microscopy, energy dispersive spectroscopy ESCA are used for quality control. Also, rapid thermal nitridation of oxidized porous silicon in ammonia is proposed to enhance OPS resistance to HF solution. Pores breakup of OPS results in a trapped gas problem during densification. Wet helium is proposed as OPS densification ambient gas to shorten densification time. Finally, PS is proposed to be an extrinsic gettering center in silicon wafers. The suppression of oxidation-induced stacking faults is used to demonstrate the gettering ability. Possible mechanism is discussed.

  10. Simulation of the annihilation emission of galactic positrons; Modelisation de l'emission d'annihilation des positrons Galactiques

    Energy Technology Data Exchange (ETDEWEB)

    Gillard, W

    2008-01-15

    Positrons annihilate in the central region of our Galaxy. This has been known since the detection of a strong emission line centered on an energy of 511 keV in the direction of the Galactic center. This gamma-ray line is emitted during the annihilation of positrons with electrons from the interstellar medium. The spectrometer SPI, onboard the INTEGRAL observatory, performed spatial and spectral analyses of the positron annihilation emission. This thesis presents a study of the Galactic positron annihilation emission based on models of the different interactions undergone by positrons in the interstellar medium. The models are relied on our present knowledge of the properties of the interstellar medium in the Galactic bulge, where most of the positrons annihilate, and of the physics of positrons (production, propagation and annihilation processes). In order to obtain constraints on the positrons sources and physical characteristics of the annihilation medium, we compared the results of the models to measurements provided by the SPI spectrometer. (author)

  11. Mining the bulk positron lifetime

    International Nuclear Information System (INIS)

    Aourag, H.; Guittom, A.

    2009-01-01

    We introduce a new approach to investigate the bulk positron lifetimes of new systems based on data-mining techniques. Through data mining of bulk positron lifetimes, we demonstrate the ability to predict the positron lifetimes of new semiconductors on the basis of available semiconductor data already studied. Informatics techniques have been applied to bulk positron lifetimes for different tetrahedrally bounded semiconductors in order to discover computational design rules. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Semiconductor-metal phase transition of vanadium dioxide nanostructures on silicon substrate: Applications for thermal control of spacecraft

    International Nuclear Information System (INIS)

    Leahu, G. L.; Li Voti, R.; Larciprete, M. C.; Belardini, A.; Mura, F.; Sibilia, C.; Bertolotti, M.; Fratoddi, I.

    2013-01-01

    We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO2) film deposited on silicon wafer. The VO2 phase transition is studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO2 which has been explained by applying the Maxwell Garnett effective medium approximation theory, together with a strong hysteresis phenomenon, both useful to design tunable thermal devices to be applied for the thermal control of spacecraft. We have also applied the photothermal radiometry in order to study the changes in the modulated emissivity induced by laser. Experimental results show how the use of these techniques represent a good tool for a quantitative measurement of the optothermal properties of vanadium dioxide based structures

  13. Amorphous silicon as high index photonic material

    Science.gov (United States)

    Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

    2009-05-01

    Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

  14. Radiation modification of silicone rubber with glycidylmethacrylate

    International Nuclear Information System (INIS)

    Segura, Tania; Burillo, Guillermina

    2013-01-01

    The grafting of glycidilmethacrylate(GMA) was grafted onto silicone rubber (SR) by using the γ-ray pre-irradiation grafting method under different conditions. The effect of reaction time, total dose, reaction temperature and monomer concentration on the graft yield was studied. It was found that the degree of grafting can be controlled by adjusting these parameters. The chemical structure of SR before and after grafting was characterized using FTIR-ATR and SEM–EDS. The analysis revealed that the surface of the SR was uniformly covered by GMA and the cross-section analysis indicated that the grafting occurred in the bulk. Thermogravimetric analysis (TGA) showed that the graft copolymer was more thermally stable than polyglycidylmethacrylate but less stable than SR, and the DSC confirmed that the GMA was grafting onto silicone rubber. - Highlights: • A graft copolymer with silicone rubber was synthesized by gamma pre-irradiation method. • SEM–EDS analysis showed that the surface and the bulk of the new copolymer were grafted. • The thermal properties of the silicone rubber used were modified with grafting. • The new copolymer could be used to immobilize nucleophilic biomolecules

  15. Solvated Positron Chemistry. Competitive Positron Reactions with Halide Ions in Water

    DEFF Research Database (Denmark)

    Christensen, Palle; Pedersen, Niels Jørgen; Andersen, J. R.

    1979-01-01

    It is shown by means of the angular correlation technique that the binding of positrons to halides is strongly influenced by solvation effects. For aqueous solutions we find increasing values for the binding energies between the halide and the positron with increasing mass of the halide...

  16. Understanding the microwave annealing of silicon

    Directory of Open Access Journals (Sweden)

    Chaochao Fu

    2017-03-01

    Full Text Available Though microwave annealing appears to be very appealing due to its unique features, lacking an in-depth understanding and accurate model hinder its application in semiconductor processing. In this paper, the physics-based model and accurate calculation for the microwave annealing of silicon are presented. Both thermal effects, including ohmic conduction loss and dielectric polarization loss, and non-thermal effects are thoroughly analyzed. We designed unique experiments to verify the mechanism and extract relevant parameters. We also explicitly illustrate the dynamic interaction processes of the microwave annealing of silicon. This work provides an in-depth understanding that can expedite the application of microwave annealing in semiconductor processing and open the door to implementing microwave annealing for future research and applications.

  17. High-Temperature Performance of Stacked Silicon Nanowires for Thermoelectric Power Generation

    Science.gov (United States)

    Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2013-07-01

    Deep reactive-ion etching at cryogenic temperatures (cryo-DRIE) has been used to produce arrays of silicon nanowires (NWs) for thermoelectric (TE) power generation devices. Using cryo-DRIE, we were able to fabricate NWs of large aspect ratios (up to 32) using a photoresist mask. Roughening of the NW sidewalls occurred, which has been recognized as beneficial for low thermal conductivity. Generated NWs, which were 7 μm in length and 220 nm to 270 nm in diameter, were robust enough to be stacked with a bulk silicon chip as a common top contact to the NWs. Mechanical support of the NW array, which can be created by filling the free space between the NWs using silicon oxide or polyimide, was not required. The Seebeck voltage, measured across multiple stacks of up to 16 bulk silicon dies, revealed negligible thermal interface resistance. With stacked silicon NWs, we observed Seebeck voltages that were an order of magnitude higher than those observed for bulk silicon. Degradation of the TE performance of silicon NWs was not observed for temperatures up to 470°C and temperature gradients up to 170 K.

  18. Positron and TSL-studies of superconducting ceramics YBa 2Cu3Oy for various y

    International Nuclear Information System (INIS)

    Aravin, L.G.; Bobolev, A.V.; Gustov, V.V.; Ryzhkov, A.I.; Shantarovich, V.P.; Vydrin, S.N.; Zainullin, R.N.

    1990-01-01

    The effect of oxygen content on the defectivity and structure of the high temperature superconductor YBa 2 Cu 3 O y (6.0 < y < 7.0) has been investigated using positron annihilation lifetime spectroscopy (LS) and thermally stimulated luminescence (TSL). Data analysis and comparison enabled a conclusion on positron trapping by metal (Ba,Cu) but not by oxygen vacancies (contrary to electrons). The trapping rate was sufficiently dependent on oxygen content in the sample. The transition range y between orthorombic (superconducting) and tetragonal (nonsuperconducting) phases was characterized by the increased content of not only oxygen but also metal (Ba,Cu) vacancies

  19. Effect of neutron irradiation on p-type silicon

    International Nuclear Information System (INIS)

    Sopko, B.

    1973-01-01

    The possibilities are discussed of silicon isotope reactions with neutrons of all energies. In the reactions, 30 Si is converted to a stable phosphorus isotope forming n-type impurities in silicon. The above reactions proceed as a result of thermal neutron irradiation. An experiment is reported involving irradiation of two p-type silicon single crystals having a specific resistance of 2000 ohm.cm and 5000 to 20 000 ohm.cm, respectively, which changed as a result of irradiation into n-type silicon with a given specific resistance. The specific resistance may be pre-calculated from the concentration of impurities and the time of irradiation. The effects of irradiation on other silicon parameters and thus on the suitability of silicon for the manufacture of semiconductor elements are discussed. (J.K.)

  20. Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

    International Nuclear Information System (INIS)

    Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

    2015-01-01

    The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)