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Sample records for silicon pore optics

  1. Coating of silicon pore optics

    Cooper-Jensen, Carsten P.; Ackermann, M.; Christensen, Finn Erland

    2009-01-01

    For the International X-ray observatory (IXO), a mirror module with an effective area of 3 m2 at 1.25 keV and at least 0.65 m2 at 6 keV has to be realized. To achieve this goal, coated silicon pore optics has been developed over the last years. One of the challenges is to coat the Si plates...

  2. Performance characterization of silicon pore optics

    Collon, M. J.; Kraft, S.; Günther, R.; Maddox, E.; Beijersbergen, M.; Bavdaz, M.; Lumb, D.; Wallace, K.; Krumrey, M.; Cibik, L.; Freyberg, M.

    2006-06-01

    The characteristics of the latest generation of assembled silicon pore X-ray optics are discussed in this paper. These very light, stiff and modular high performance pore optics (HPO) have been developed [1] for the next generation of astronomical X-ray telescopes, which require large collecting areas whilst achieving angular resolutions better than 5 arcseconds. The suitability of 12 inch silicon wafers as high quality optical mirrors and the automated assembly process are discussed elsewhere in this conference. HPOs with several tens of ribbed silicon plates are assembled by bending the plates into an accurate cylindrical shape and directly bonding them on top of each other. The achievable figure accuracy is measured during assembly and in test campaigns at X-ray testing facilities like BESSY-II and PANTER. Pencil beam measurements allow gaining information on the quality achieved by the production process with high spatial resolution. In combination with full beam illumination a complete picture of the excellent performance of these optics can be derived. Experimental results are presented and discussed in detail. The results of such campaigns are used to further improve the production process in order to match the challenging XEUS requirements [2] for imaging resolution and mass.

  3. Silicon pore optics developments and status

    Bavdaz, Marcos; Wille, Eric; Wallace, Kotska

    2012-01-01

    Silicon Pore Optics (SPO) is a lightweight high performance X-ray optics technology being developed in Europe, driven by applications in observatory class high energy astrophysics missions. An example of such application is the former ESA science mission candidate ATHENA (Advanced Telescope...... for High Energy Astrophysics), which uses the SPO technology for its two telescopes, in order to provide an effective area exceeding 1 m2 at 1 keV, and 0.5 m2 at 6 keV, featuring an angular resolution of 10" or better [1 to 24]. This paper reports on the development activities led by ESA, and the status...

  4. Performance of multilayer coated silicon pore optics

    Ackermann, M. D.; Collon, M. J.; Jensen, C. P.; Christensen, F. E.; Krumrey, M.; Cibik, L.; Marggraf, S.; Bavdaz, M.; Lumb, D.; Shortt, B.

    2010-07-01

    The requirements for the IXO (International X-ray Observatory) telescope are very challenging in respect of angular resolution and effective area. Within a clear aperture with 1.7 m > R > 0.25 m that is dictated by the spacecraft envelope, the optics technology must be developed to satisfy simultaneously requirements for effective area of 2.5 m2 at 1.25 keV, 0.65 m2 at 6 keV and 150 cm2 at 30 keV. The reflectivity of the bare mirror substrate materials does not allow these requirements to be met. As such the IXO baseline design contains a coating layout that varies as a function of mirror radius and in accordance with the variation in grazing incidence angle. The higher energy photon response is enhanced through the use of depth-graded multilayer coatings on the inner radii mirror modules. In this paper we report on the first reflectivity measurements of wedged ribbed silicon pore optics mirror plates coated with a depth graded W/Si multilayer. The measurements demonstrate that the deposition and performance of the multilayer coatings is compatible with the SPO production process.

  5. Silicon pore optics for future x-ray telescopes

    Wille, Eric; Bavdaz, Marcos; Wallace, Kotska

    2017-01-01

    arcsec or better. These specifications can only be achieved with a novel technology like Silicon Pore Optics, which is being developed by ESA together with a consortium of European industry. Silicon Pore Optics are made of commercial Si wafers using process technology adapted from the semiconductor...... industry. We present the recent upgrades made to the manufacturing processes and equipment, ranging from the manufacture of single mirror plates towards complete focusing mirror modules mounted in flight configuration, and results from first vibration tests. The performance of the mirror modules is tested...

  6. Silicon pore optics for the international x-ray observatory

    Wille, E.; Wallace, K.; Bavdaz, M.; Collon, M. J.; Günther, R.; Ackermann, M.; Beijersbergen, M. W.; Riekerink, M. O.; Blom, M.; Lansdorp, B.; de Vreede, L.

    2017-11-01

    Lightweight X-ray Wolter optics with a high angular resolution will enable the next generation of X-ray telescopes in space. The International X-ray Observatory (IXO) requires a mirror assembly of 3 m2 effective area (at 1.5 keV) and an angular resolution of 5 arcsec. These specifications can only be achieved with a novel technology like Silicon Pore Optics, which is developed by ESA together with a consortium of European industry. Silicon Pore Optics are made of commercial Si wafers using process technology adapted from the semiconductor industry. We present the manufacturing process ranging from single mirror plates towards complete focusing mirror modules mounted in flight configuration. The performance of the mirror modules is tested using X-ray pencil beams or full X-ray illumination. In 2009, an angular resolution of 9 arcsec was achieved, demonstrating the improvement of the technology compared to 17 arcsec in 2007. Further development activities of Silicon Pore Optics concentrate on ruggedizing the mounting system and performing environmental tests, integrating baffles into the mirror modules and assessing the mass production.

  7. Silicon pore optics for future x-ray telescopes

    Wille, Eric; Bavdaz, Marcos; Wallace, Kotska; Shortt, Brian; Collon, Maximilien; Ackermann, Marcelo; Günther, Ramses; Olde Riekerink, Mark; Koelewijn, Arenda; Haneveld, Jeroen; van Baren, Coen; Erhard, Markus; Kampf, Dirk; Christensen, Finn; Krumrey, Michael; Freyberg, Michael; Burwitz, Vadim

    2017-11-01

    Lightweight X-ray Wolter optics with a high angular resolution will enable the next generation of X-ray telescopes in space. The candidate mission ATHENA (Advanced Telescope for High Energy Astrophysics) required a mirror assembly of 1 m2 effective area (at 1 keV) and an angular resolution of 10 arcsec or better. These specifications can only be achieved with a novel technology like Silicon Pore Optics, which is being developed by ESA together with a consortium of European industry. Silicon Pore Optics are made of commercial Si wafers using process technology adapted from the semiconductor industry. We present the recent upgrades made to the manufacturing processes and equipment, ranging from the manufacture of single mirror plates towards complete focusing mirror modules mounted in flight configuration, and results from first vibration tests. The performance of the mirror modules is tested at X-ray facilities that were recently extended to measure optics at a focal distance up to 20 m.

  8. Low atomic number coating for XEUS silicon pore optics

    Lumb, D.H.; Cooper-Jensen, Carsten P.; Krumrey, M.

    2008-01-01

    We describe a set of measurements on coated silicon substrates that are representative of the material to be used for the XEUS High Performance Pore Optics (HPO) technology. X-ray angular reflectance measurements at 2.8 and 8 keV, and energy scans of reflectance at a fixed angle representative...... of XEUS graze angles are presented. Reflectance is significantly enhanced for low energies when a low atomic number over-coating is applied. Modeling of the layer thicknesses and roughness is used to investigate the dependence on the layer thicknesses, metal and over coat material choices. We compare...

  9. Low atomic number coating for XEUS silicon pore optics

    Lumb, D. H.; Jensen, C. P.; Krumrey, M.; Cibik, L.; Christensen, F.; Collon, M.; Bavdaz, M.

    2008-07-01

    We describe a set of measurements on coated silicon substrates that are representative of the material to be used for the XEUS High Performance Pore Optics (HPO) technology. X-ray angular reflectance measurements at 2.8 and 8 keV, and energy scans of reflectance at a fixed angle representative of XEUS graze angles are presented. Reflectance is significantly enhanced for low energies when a low atomic number over-coating is applied. Modeling of the layer thicknesses and roughness is used to investigate the dependence on the layer thicknesses, metal and over coat material choices. We compare the low energy effective area increase that could be achieved with an optimized coating design.

  10. Mass production of silicon pore optics for ATHENA

    Wille, Eric; Bavdaz, Marcos; Collon, Maximilien

    2016-07-01

    Silicon Pore Optics (SPO) provide high angular resolution with low effective area density as required for the Advanced Telescope for High Energy Astrophysics (Athena). The x-ray telescope consists of several hundreds of SPO mirror modules. During the development of the process steps of the SPO technology, specific requirements of a future mass production have been considered right from the beginning. The manufacturing methods heavily utilise off-the-shelf equipment from the semiconductor industry, robotic automation and parallel processing. This allows to upscale the present production flow in a cost effective way, to produce hundreds of mirror modules per year. Considering manufacturing predictions based on the current technology status, we present an analysis of the time and resources required for the Athena flight programme. This includes the full production process starting with Si wafers up to the integration of the mirror modules. We present the times required for the individual process steps and identify the equipment required to produce two mirror modules per day. A preliminary timeline for building and commissioning the required infrastructure, and for flight model production of about 1000 mirror modules, is presented.

  11. Mass production of silicon pore optics for IXO and ATHENA

    Wille, Eric; Wallace, Kotska; Bavdaz, Marcos

    2011-09-01

    Silicon Pore Optics (SPO) provide high angular resolution with low area density as required for the International X-ray Observatory (IXO) or the Advanced Telescope for High Energy Astrophysics (ATHENA). The baseline for both telescopes consists of populating the mirror assembly with hundreds of SPO mirror modules. During the development of the process steps of the SPO technology, specific requirements of a future mass production have been considered right from the beginning. The manufacturing methods heavily utilise off-the-shelf equipment from the semiconductor industry, robotic automation and parallel processing. This allows to upscale the present production flow in a cost effective way, to produce hundreds of mirror modules per year. Considering manufacturing predictions based on the current technology status, we present an analysis of the time and resources required for a future flight programme. This includes the full production process starting with Si wafers up to the integration of the mirror modules. We present the times required for the individual process steps and identify the equipment required to produce several mirror modules per day. A preliminary timeline for building and commissioning the required infrastructure, and for flight model production of about 500 (ATHENA) and 2000 (IXO) mirror modules, is presented.

  12. Design, fabrication, and characterization of silicon pore optics for ATHENA/IXO

    Collon, Maximilien J.; Günther, Ramses; Ackermann, Marcelo

    2011-01-01

    Silicon pore optics is a technology developed to enable future large area X-ray telescopes, such as the International X-ray Observatory (IXO) or the Advanced Telescope for High ENergy Astrophysics (ATHENA), an L-class candidate mission in the ESA Space Science Programme 'Cosmic Visions 2015-2025'...... integrated into petals, and mounted onto the spacecraft to form an X-ray optic. In this paper we will present the silicon pore optics mass manufacturing process and latest X-ray test results.......-2025'. ATHENA/IXO use nested mirrors in Wolter-I configuration to focus grazing incidence X-ray photons on a detector plane. The x-ray optics will have to meet stringent performance requirements including an effective area of a few m2 at 1.25 keV and angular resolution between 5(IXO) and 9(ATHENA) arc seconds...

  13. Performance testing of an off-plane reflection grating and silicon pore optic spectrograph at PANTER

    Marlowe, Hannah; McEntaffer, Randall L.; Allured, Ryan; DeRoo, Casey T.; Donovan, Benjamin D.; Miles, Drew M.; Tutt, James H.; Burwitz, Vadim; Menz, Benedikt; Hartner, Gisela D.; Smith, Randall K.; Cheimets, Peter; Hertz, Edward; Bookbinder, Jay A.; Günther, Ramses; Yanson, Alex; Vacanti, Giuseppe; Ackermann, Marcelo

    2015-10-01

    An x-ray spectrograph consisting of aligned, radially ruled off-plane reflection gratings and silicon pore optics (SPO) was tested at the Max Planck Institute for Extraterrestrial Physics PANTER x-ray test facility. SPO is a test module for the proposed Arcus mission, which will also feature aligned off-plane reflection gratings. This test is the first time two off-plane gratings were actively aligned to each other and with an SPO to produce an overlapped spectrum. We report the performance of the complete spectrograph utilizing the aligned gratings module and plans for future development.

  14. Performance testing of a novel off-plane reflection grating and silicon pore optic spectrograph at PANTER

    Marlowe, Hannah; McEntaffer, Randall L.; Allured, Ryan; DeRoo, Casey; Miles, Drew M.; Donovan, Benjamin D.; Tutt, James H.; Burwitz, Vadim; Menz, Benedikt; Hartner, Gisela D.; Smith, Randall K.; Günther, Ramses; Yanson, Alex; Vacanti, Giuseppe; Ackermann, Marcelo

    2015-05-01

    An X-ray spectrograph consisting of aligned, radially ruled off-plane reflection gratings and silicon pore optics (SPO) was tested at the Max Planck Institute for extraterrestrial Physics PANTER X-ray test facility. The SPO is a test module for the proposed Arcus mission, which will also feature aligned off-plane reflection gratings. This test is the first time two off-plane gratings were actively aligned to each other and with a SPO to produce an overlapped spectrum. We report the performance of the complete spectrograph utilizing the aligned gratings module and plans for future development.

  15. New x-ray parallel beam facility XPBF 2.0 for the characterization of silicon pore optics

    Krumrey, Michael; Müller, Peter; Cibik, Levent; Collon, Max; Barrière, Nicolas; Vacanti, Giuseppe; Bavdaz, Marcos; Wille, Eric

    2016-07-01

    A new X-ray parallel beam facility (XPBF 2.0) has been installed in the laboratory of the Physikalisch-Technische Bundesanstalt at the synchrotron radiation facility BESSY II in Berlin to characterize silicon pore optics (SPOs) for the future X-ray observatory ATHENA. As the existing XPBF which is operated since 2005, the new beamline provides a pencil beam of very low divergence, a vacuum chamber with a hexapod system for accurate positioning of the SPO to be investigated, and a vertically movable CCD-based camera system to register the direct and the reflected beam. In contrast to the existing beamline, a multilayer-coated toroidal mirror is used for beam monochromatization at 1.6 keV and collimation, enabling the use of beam sizes between about 100 μm and at least 5 mm. Thus the quality of individual pores as well as the focusing properties of large groups of pores can be investigated. The new beamline also features increased travel ranges for the hexapod to cope with larger SPOs and a sample to detector distance of 12 m corresponding to the envisaged focal length of ATHENA.

  16. Optical simulations for design, alignment, and performance prediction of silicon pore optics for the ATHENA x-ray telescope

    Spiga, D.; Della Monica Ferreira, Desiree; Shortt, B.

    2017-01-01

    of these aspects is required in order to assess the fabrication and alignment tolerances; moreover, the achievable effective area and angular resolution depend on the mirror module design. Therefore, guaranteeing these optical performances requires: a fast design tool to find the most performing solution in terms...

  17. X-ray pore optic developments

    Wallace, Kotska; Bavdaz, Marcos; Collon, Maximilien; Beijersbergen, Marco; Kraft, Stefan; Fairbend, Ray; Séguy, Julien; Blanquer, Pascal; Graue, Roland; Kampf, Dirk

    2017-11-01

    In support of future x-ray telescopes ESA is developing new optics for the x-ray regime. To date, mass and volume have made x-ray imaging technology prohibitive to planetary remote sensing imaging missions. And although highly successful, the mirror technology used on ESA's XMM-Newton is not sufficient for future, large, x-ray observatories, since physical limits on the mirror packing density mean that aperture size becomes prohibitive. To reduce telescope mass and volume the packing density of mirror shells must be reduced, whilst maintaining alignment and rigidity. Structures can also benefit from a modular optic arrangement. Pore optics are shown to meet these requirements. This paper will discuss two pore optic technologies under development, with examples of results from measurement campaigns on samples. One activity has centred on the use of coated, silicon wafers, patterned with ribs, that are integrated onto a mandrel whose form has been polished to the required shape. The wafers follow the shape precisely, forming pore sizes in the sub-mm region. Individual stacks of mirrors can be manufactured without risk to, or dependency on, each other and aligned in a structure from which they can also be removed without hazard. A breadboard is currently being built to demonstrate this technology. A second activity centres on glass pore optics. However an adaptation of micro channel plate technology to form square pores has resulted in a monolithic material that can be slumped into an optic form. Alignment and coating of two such plates produces an x-ray focusing optic. A breadboard 20cm aperture optic is currently being built.

  18. Preparation of micro-pored silicone elastomer through radiation crosslinking

    Gao Xiaoling; Gu Mei; Xie Xubing; Huang Wei

    2013-01-01

    The radiation crosslinking was adopted to prepare the micro-pored silicone elastomer, which was performed by vulcanization and foaming respectively. Radiation crosslinking is a new method to prepare micro-pored material with high performance by use of radiation technology. Silicon dioxide was used as filler, and silicone elastomer was vulcanized by electron beams, then the micro-pored material was made by heating method at a high temperature. The effects of absorbed dose and filler content on the performance and morphology were investigated. The structure and distribution of pores were observed by SEM. The results show that the micro-pored silicon elastomer can be prepared successfully by controlling the absorbed dose and filler content. It has a smooth surface similar to a rubber meanwhile the pores are round and unconnected to each other with the minimum size of 14 μm. And the good mechanical performance can be suitable for further uses. (authors)

  19. Different size biomolecules anchoring on porous silicon surface: fluorescence and reflectivity pores infiltration comparative studies

    Giovannozzi, Andrea M.; Rossi, Andrea M. [National Institute for Metrological Research, Thermodynamic Division, Strada delle Cacce 91, 10135 Torino (Italy); Renacco, Chiara; Farano, Alessandro [Ribes Ricecrhe Srl, Via Lavoratori Vittime del Col du Mont 24, 11100 Aosta (Italy); Derosas, Manuela [Biodiversity Srl, Via Corfu 71, 25124 Brescia (Italy); Enrico, Emanuele [National Institute for Metrological Research, Electromagnetism Division, Strada delle Cacce 91, 10135 Torino (Italy)

    2011-06-15

    The performance of porous silicon optical based biosensors strongly depends on material nanomorphology, on biomolecules distribution inside the pores and on the ability to link sensing species to the pore walls. In this paper we studied the immobilization of biomolecules with different size, such as antibody anti aflatoxin (anti Aflatox Ab, {proportional_to}150 KDa), malate dehydrogenase (MDH, {proportional_to}36KDa) and metallothionein (MT, {proportional_to}6KDa) at different concentrations on mesoporous silicon samples ({proportional_to}15 nm pores diameter). Fluorescence measurements using FITC- labeled biomolecules and refractive index analysis based on reflectivity spectra have been employed together to detect the amount of proteins bound to the surface and to evaluate their diffusion inside the pores. Here we suggest that these two techniques should be used together to have a better understanding of what happens at the porous silicon surface. In fact, when pores dimensions are not perfectly tuned to the protein size a higher fluorescence signal doesn't often correspond to a higher biomolecules distribution inside the pores. When a too much higher concentration of biomolecule is anchored on the surface, steric crowd effects and repulsive interactions probably take over and hinder pores infiltration, inducing a small or absent shift in the fringe pattern even if a higher fluorescence signal is registered. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Effects of pore design on mechanical properties of nanoporous silicon

    Winter, Nicholas; Becton, Matthew; Zhang, Liuyang; Wang, Xianqiao

    2017-01-01

    Nanoporous silicon has been emerging as a powerful building block for next-generation sensors, catalysts, transistors, and tissue scaffolds. The capability to design novel devices with desired mechanical properties is paramount to their reliability and serviceability. In order to bring further resolution to the highly variable mechanical characteristics of nanoporous silicon, here we perform molecular dynamics simulations to study the effects of ligament thickness, relative density, and pore geometry/orientation on the mechanical properties of nanoporous silicon, thereby determining its Young's modulus, ultimate strength, and toughness as well as the scaling laws versus the features of interior ligaments. Results show that pore shape and pattern dictate stress accumulation inside the designed structure, leading to the corresponding failure signature, such as stretching-dominated, bending-dominated, or stochastic failure signatures, in nanoporous silicon. The nanostructure of the material is also seen to drive or mute size effects such as “smaller is stronger” and “smaller is ductile”. This investigation provides useful insight into the behavior of nanoporous silicon and how one might leverage its promising applications. - Graphical abstract: Molecular dynamics simulations are performed to study the effects of ligament thickness, relative density, and pore geometry/orientation on the mechanical properties of nanoporous silicon, thereby determining its Young's modulus, ultimate strength, and toughness as well as the scaling trends versus the features of interior ligaments.

  1. Porous Silicon Structures as Optical Gas Sensors.

    Levitsky, Igor A

    2015-08-14

    We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi) and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers) are described for gas sensing with an emphasis on the device specificity, sensitivity and stability to the environment. Special attention is paid to multiparametric sensing and sensor array platforms as effective trends for the improvement of analyte classification and quantification. Mechanisms of gas physical and chemical sorption inside PSi mesopores and pores of PSi functional composites are discussed.

  2. Silicon Pore Optics development for ATHENA

    Collon, Maximilien J.; Vacanti, Giuseppe; Guenther, Ramses

    2015-01-01

    The ATHENA mission, a European large (L) class X-ray observatory to be launched in 2028, will essentially consist of an X-ray lens and two focal plane instruments. The lens, based on a Wolter-I type double reflection grazing incidence angle design, will be very large (similar to 3 m in diameter) ...

  3. Performance of multilayer coated silicon pore optics

    Ackermann, M. D.; Collon, M. J.; Cooper-Jensen, Carsten P.

    2010-01-01

    simultaneously requirements for effective area of 2.5 m2 at 1.25 keV, 0.65 m2 at 6 keV and 150 cm2 at 30 keV. The reflectivity of the bare mirror substrate materials does not allow these requirements to be met. As such the IXO baseline design contains a coating layout that varies as a function of mirror radius...

  4. Understanding capillary condensation and hysteresis in porous silicon: network effects within independent pores.

    Naumov, Sergej; Khokhlov, Alexey; Valiullin, Rustem; Kärger, Jörg; Monson, Peter A

    2008-12-01

    The ability to exert a significant degree of pore structure control in porous silicon materials has made them attractive materials for the experimental investigation of the relationship between pore structure, capillary condensation, and hysteresis phenomena. Using both experimental measurements and a lattice gas model in mean field theory, we have investigated the role of pore size inhomogeneities and surface roughness on capillary condensation of N2 at 77K in porous silicon with linear pores. Our results resolve some puzzling features of earlier experimental work. We find that this material has more in common with disordered materials such as Vycor glass than the idealized smooth-walled cylindrical pores discussed in the classical adsorption literature. We provide strong evidence that this behavior comes from the complexity of the processes within independent linear pores, arising from the pore size inhomogeneities along the pore axis, rather than from cooperative effects between different pores.

  5. Silicon Optical Modulator Simulation

    Soon Thor LIM

    2015-04-01

    Full Text Available We developed a way of predicting and analyzing high speed optical modulator. Our research adopted a bottom-up approach to consider high-speed optical links using an eye diagram. Our method leverages on modular mapping of electrical characteristics to optical characteristics, while attaining the required accuracy necessary for device footprint approaching sub-micron scales where electrical data distribution varies drastically. We calculate for the bias dependent phase shift (2pi/mm and loss (dB/mm for the optical modulator based on the real and imaginary part of complex effective indices. Subsequently, combine effectively both the electrical and optical profiles to construct the optical eye diagram which is the essential gist of signal integrity of such devices.

  6. Optical properties of erbium-doped porous silicon waveguides

    Najar, A. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France); Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France)]. E-mail: joel.charier@univ-rennes1.fr; Ajlani, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Lorrain, N. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France); Elhouichet, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Oueslati, M. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Haji, L. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France)

    2006-12-15

    Planar and buried channel porous silicon waveguides (WG) were prepared from p{sup +}-type silicon substrate by a two-step anodization process. Erbium ions were incorporated into pores of the porous silicon layers by an electrochemical method using ErCl{sub 3}-saturated solution. Erbium concentration of around 10{sup 20} at/cm{sup 3} was determined by energy-dispersive X-ray analysis performed on SEM cross-section. The luminescence properties of erbium ions in the IR range were determined and a luminescence time decay of 420 {mu}s was measured. Optical losses were studied on these WG. The increased losses after doping were discussed.

  7. Designing High-Efficiency Thin Silicon Solar Cells Using Parabolic-Pore Photonic Crystals

    Bhattacharya, Sayak; John, Sajeev

    2018-04-01

    We demonstrate the efficacy of wave-interference-based light trapping and carrier transport in parabolic-pore photonic-crystal, thin-crystalline silicon (c -Si) solar cells to achieve above 29% power conversion efficiencies. Using a rigorous solution of Maxwell's equations through a standard finite-difference time domain scheme, we optimize the design of the vertical-parabolic-pore photonic crystal (PhC) on a 10 -μ m -thick c -Si solar cell to obtain a maximum achievable photocurrent density (MAPD) of 40.6 mA /cm2 beyond the ray-optical, Lambertian light-trapping limit. For a slanted-parabolic-pore PhC that breaks x -y symmetry, improved light trapping occurs due to better coupling into parallel-to-interface refraction modes. We achieve the optimum MAPD of 41.6 mA /cm2 for a tilt angle of 10° with respect to the vertical axis of the pores. This MAPD is further improved to 41.72 mA /cm2 by introducing a 75-nm SiO2 antireflective coating on top of the solar cell. We use this MAPD and the associated charge-carrier generation profile as input for a numerical solution of Poisson's equation coupled with semiconductor drift-diffusion equations using a Shockley-Read-Hall and Auger recombination model. Using experimentally achieved surface recombination velocities of 10 cm /s , we identify semiconductor doping profiles that yield power conversion efficiencies over 29%. Practical considerations of additional upper-contact losses suggest efficiencies close to 28%. This improvement beyond the current world record is largely due to an open-circuit voltage approaching 0.8 V enabled by reduced bulk recombination in our thin silicon architecture while maintaining a high short-circuit current through wave-interference-based light trapping.

  8. Porous Silicon Structures as Optical Gas Sensors

    Igor A. Levitsky

    2015-08-01

    Full Text Available We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers are described for gas sensing with an emphasis on the device specificity, sensitivity and stability to the environment. Special attention is paid to multiparametric sensing and sensor array platforms as effective trends for the improvement of analyte classification and quantification. Mechanisms of gas physical and chemical sorption inside PSi mesopores and pores of PSi functional composites are discussed.

  9. Micro benchtop optics by bulk silicon micromachining

    Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  10. Confocal imaging of protein distributions in porous silicon optical structures

    De Stefano, Luca; D'Auria, Sabato

    2007-01-01

    The performances of porous silicon optical biosensors depend strongly on the arrangement of the biological probes into their sponge-like structures: it is well known that in this case the sensing species do not fill the pores but instead cover their internal surface. In this paper, the direct imaging of labelled proteins into different porous silicon structures by using a confocal laser microscope is reported. The distribution of the biological matter in the nanostructured material follows a Gaussian behaviour which is typical of the diffusion process in the porous media but with substantial differences between a porous silicon monolayer and a multilayer such as a Bragg mirror. Even if semi-quantitative, the results can be very useful in the design of the porous silicon based biosensing devices

  11. Nonlinear optical interactions in silicon waveguides

    Kuyken B.

    2017-03-01

    Full Text Available The strong nonlinear response of silicon photonic nanowire waveguides allows for the integration of nonlinear optical functions on a chip. However, the detrimental nonlinear optical absorption in silicon at telecom wavelengths limits the efficiency of many such experiments. In this review, several approaches are proposed and demonstrated to overcome this fundamental issue. By using the proposed methods, we demonstrate amongst others supercontinuum generation, frequency comb generation, a parametric optical amplifier, and a parametric optical oscillator.

  12. Size Control of Porous Silicon-Based Nanoparticles via Pore-Wall Thinning.

    Secret, Emilie; Leonard, Camille; Kelly, Stefan J; Uhl, Amanda; Cozzan, Clayton; Andrew, Jennifer S

    2016-02-02

    Photoluminescent silicon nanocrystals are very attractive for biomedical and electronic applications. Here a new process is presented to synthesize photoluminescent silicon nanocrystals with diameters smaller than 6 nm from a porous silicon template. These nanoparticles are formed using a pore-wall thinning approach, where the as-etched porous silicon layer is partially oxidized to silica, which is dissolved by a hydrofluoric acid solution, decreasing the pore-wall thickness. This decrease in pore-wall thickness leads to a corresponding decrease in the size of the nanocrystals that make up the pore walls, resulting in the formation of smaller nanoparticles during sonication of the porous silicon. Particle diameters were measured using dynamic light scattering, and these values were compared with the nanocrystallite size within the pore wall as determined from X-ray diffraction. Additionally, an increase in the quantum confinement effect is observed for these particles through an increase in the photoluminescence intensity of the nanoparticles compared with the as-etched nanoparticles, without the need for a further activation step by oxidation after synthesis.

  13. Nonlinear optical properties of silicon waveguides

    Tsang, H K; Liu, Y

    2008-01-01

    Recent work on two-photon absorption (TPA), stimulated Raman scattering (SRS) and optical Kerr effect in silicon-on-insulator (SOI) waveguides is reviewed and some potential applications of these optical nonlinearities, including silicon-based autocorrelation detectors, optical amplifiers, high speed optical switches, optical wavelength converters and self-phase modulation (SPM), are highlighted. The importance of free carriers generated by TPA in nonlinear devices is discussed, and a generalized definition of the nonlinear effective length to cater for nonlinear losses is proposed. How carrier lifetime engineering, and in particular the use of helium ion implantation, can enhance the nonlinear effective length for nonlinear devices is also discussed

  14. An all-silicon passive optical diode.

    Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

    2012-01-27

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

  15. Pore collapse and regrowth in silicon electrodes for rechargeable batteries

    DeCaluwe, S. C. [Department of Mechanical Engineering; Colorado School of Mines; USA; Center for Neutron Research; National Institute of Standards and Technology; Dhar, B. M. [Institute for Materials Research and Dept. of Mechanical Engineering; State University of New York; Binghamton; USA; Material Measurement Laboratory; Huang, L. [Institute for Materials Research and Dept. of Mechanical Engineering; State University of New York; Binghamton; USA; He, Y. [Institute for Materials Research and Dept. of Mechanical Engineering; State University of New York; Binghamton; USA; Department of Physics and Astronomy; Yang, K. [Institute for Materials Research and Dept. of Mechanical Engineering; State University of New York; Binghamton; USA; Owejan, J. P. [Department of Mechanical and Electrical Engineering Technology; State University of New York; Alfred; USA; Zhao, Y. [Department of Physics and Astronomy; University of Georgia; Athens; USA; Talin, A. A. [Center for Nanoscale Science and Technology; National Institute of Standards and Technology; Gaithersburg; USA; Sandia National Laboratories; Dura, J. A. [Center for Neutron Research; National Institute of Standards and Technology; Gaithersburg; USA; Wang, H. [Department of Materials Science and Engineering; University of Maryland; College Park; USA; Institute for Materials Research and Dept. of Mechanical Engineering

    2015-01-01

    In-operando Neutron Reflectometry establishes the pore collapse and regrowth (PCRG) mechanism in amorphous Si. Upon lithiation, porosity is first consumed by expansion of solid Si domains, with little thickness increase. After, the whole film expands. Porosity returns upon delithiation.

  16. Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon

    Pushpendra Kumar

    2007-01-01

    Full Text Available The most common fabrication technique of porous silicon (PS is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The control of these properties of PS was shown to depend on the HF concentration in the used electrolyte, the applied current density, and the thickness of PS. The change in pore diameter, porosity, and specific surface area of PS was investigated by measuring nitrogen sorption isotherms.

  17. Porous silicon structures with high surface area/specific pore size

    Northrup, M.A.; Yu, C.M.; Raley, N.F.

    1999-03-16

    Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gases in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters. 9 figs.

  18. Silicon based ultrafast optical waveform sampling

    Ji, Hua; Galili, Michael; Pu, Minhao

    2010-01-01

    A 300 nmx450 nmx5 mm silicon nanowire is designed and fabricated for a four wave mixing based non-linear optical gate. Based on this silicon nanowire, an ultra-fast optical sampling system is successfully demonstrated using a free-running fiber laser with a carbon nanotube-based mode-locker as th......A 300 nmx450 nmx5 mm silicon nanowire is designed and fabricated for a four wave mixing based non-linear optical gate. Based on this silicon nanowire, an ultra-fast optical sampling system is successfully demonstrated using a free-running fiber laser with a carbon nanotube-based mode......-locker as the sampling source. A clear eye-diagram of a 320 Gbit/s data signal is obtained. The temporal resolution of the sampling system is estimated to 360 fs....

  19. Fabrication Method for LOBSTER-Eye Optics in Silicon

    Chervenak, James; Collier, Michael; Mateo, Jennette

    2013-01-01

    Soft x-ray optics can use narrow slots to direct x-rays into a desirable pattern on a focal plane. While square-pack, square-pore, slumped optics exist for this purpose, they are costly. Silicon (Si) is being examined as a possible low-cost replacement. A fabrication method was developed for narrow slots in Si demonstrating the feasibility of stacked slot optics to replace micropores. Current micropore optics exist that have 20-micron-square pores on 26-micron pitch in glass with a depth of 1 mm and an extent of several square centimeters. Among several proposals to emulate the square pore optics are stacked slot chips with etched vertical slots. When the slots in the stack are positioned orthogonally to each other, the component will approach the soft x-ray focusing observed in the micropore optics. A specific improvement Si provides is that it can have narrower sidewalls between slots to permit greater throughput of x-rays through the optics. In general, Si can have more variation in slot geometry (width, length). Further, the sidewalls can be coated with high-Z materials to enhance reflection and potentially reduce the surface roughness of the reflecting surface. Narrow, close-packed deep slots in Si have been produced using potassium hydroxide (KOH) etching and a patterned silicon nitride (SiN) mask. The achieved slot geometries have sufficient wall smoothness, as observed through scanning electron microscope (SEM) imaging, to enable evaluation of these slot plates as an optical element for soft x-rays. Etches of different angles to the crystal plane of Si were evaluated to identify a specific range of etch angles that will enable low undercut slots in the Si material. These slots with the narrow sidewalls are demonstrated to several hundred microns in depth, and a technical path to 500-micron deep slots in a precision geometry of narrow, closepacked slots is feasible. Although intrinsic stress in ultrathin wall Si is observed, slots with walls approaching 1

  20. An All-Silicon Passive Optical Diode

    Fan, Li; Wang, Jian; Varghese, Leo T.; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M.; Qi, Minghao

    2011-01-01

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input pow...

  1. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

  2. Optical signal processing by silicon photonics

    Ahmed, Jameel; Adeel, Freeha; Hussain, Ashiq

    2014-01-01

    The main objective of this book is to make respective graduate students understand the nonlinear effects inside SOI waveguide and possible applications of SOI waveguides in this emerging research area of optical fibre communication. This book focuses on achieving successful optical frequency shifting by Four Wave Mixing (FWM) in silicon-on-insulator (SOI) waveguide by exploiting a nonlinear phenomenon.

  3. Fabrication of silicon molds for polymer optics

    Nilsson, Daniel; Jensen, Søren; Menon, Aric Kumaran

    2003-01-01

    A silicon mold used for structuring polymer microcavities for optical applications is fabricated, using a combination of DRIE (deep reactive ion etching) and anisotropic chemical wet etching with KOH + IPA. For polymer optical microcavities, low surface roughness and vertical sidewalls are often ...... and KOH + IPA etch have been optimized. To reduce stiction between the silicon mold and the polymers used for molding, the mold is coated with a teflon-like material using the DRIE system. Released polymer microstructures characterized with AFM and SEM are also presented....

  4. The effect of oxidation on physical properties of porous silicon layers for optical applications

    Pirasteh, Parasteh [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Charrier, Joel [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France)]. E-mail: joel.charrier@univ-rennes1.fr; Soltani, Ali [Institut d' Electronique, de Microemectronique et de Nanotechnologie, CNRS-UMR 8520, Cite Scientifique Avenue Poincare, BP 69, 59652 Villeneuve d' Ascq Cedex (France); Haesaert, Severine [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Haji, Lazhar [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Godon, Christine [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France); Errien, Nicolas [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France)

    2006-12-15

    In order to understand the optical loss mechanisms in porous silicon based waveguides, structural and optical studies have been performed. Scanning and transmission electron microscopic observations of porous silicon layers are obtained before and after an oxidation process at high temperature in wet O{sub 2}. Pore size and shape of heavily p-type doped Si wafers are estimated and correlated to the optical properties of the material before and after oxidation. The refractive index was measured and compared to that determined by the Bruggeman model.

  5. Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes

    Lenshin, A. S., E-mail: lenshinas@phys.vsu.ru; Seredin, P. V.; Kavetskaya, I. V.; Minakov, D. A.; Kashkarov, V. M. [Voronezh State University (Russian Federation)

    2017-02-15

    The deposition features of the organic dye Rhodamine B on the porous surface of silicon with average pore sizes of 50–100 and 100–250 nm are studied. Features of the composition and optical properties of the obtained systems are studied using infrared and photoluminescence spectroscopy. It is found that Rhodamine-B adsorption on the surface of por-Si with various porosities is preferentially physical. The optimal technological parameters of its deposition are determined.

  6. Silicon Isotopes of Marine Pore Water: Tracking the Destiny of Marine Biogenic Opal

    Cassarino, L.; Hendry, K. R.

    2017-12-01

    Silicon isotopes (δ30Si) are a powerful tool for the studying of the past and present silicon cycles, which is closely linked to the carbon cycle. Siliceous phytoplankton, such as diatoms, as one of the major conveyors of carbon to marine sediments. δ30Si from fossil diatoms has been shown to represent past silicic acid (DSi) utilization in the photic zone, since the lighter isotope is preferentially incorporated in their skeleton, the frustule. This assumes that species in the sediments depict past blooms and that frustules are preserved in their initial state during burial. Here we present new silicon isotopes data of sea water and pore water of deep marine sediments from two contrasted environments, the Equatorial Atlantic and West Antarctic Peninsula. δ30Si and DSi concentration, of both sea water and pore water, are negatively correlated. Marine biogenic opal dissolution can be tracked using δ30Si signature of pore water as lighter signals and high DSi concentrations are associated with the biogenic silica. Our data enhances post depositional and diagenesis processes during burial with a clear highlight on the sediment water interface exchanges.

  7. Thermal and optical properties of porous silicon

    Silva A. Ferreira da

    2001-01-01

    Full Text Available Thermal diffusivity and optical absorption have been investigated for porous silicon, at room temperature, using photoacoustic spectroscopy. The experimental results obtained conform well with the existing studies recently published. The value obtained for thermal diffusivity is 0.045 ± 0.002 cm²/s.The absorption onsets show energy structures, differing from the ordinary semiconductor of bulk type.

  8. A Microsystem Based on Porous Silicon-Glass Anodic Bonding for Gas and Liquid Optical Sensing

    Ivo Rendina

    2006-06-01

    Full Text Available We have recently presented an integrated silicon-glass opto-chemical sensor forlab-on-chip applications, based on porous silicon and anodic bonding technologies. In thiswork, we have optically characterized the sensor response on exposure to vapors of severalorganic compounds by means of reflectivity measurements. The interaction between theporous silicon, which acts as transducer layer, and the organic vapors fluxed into the glasssealed microchamber, is preserved by the fabrication process, resulting in optical pathincrease, due to the capillary condensation of the vapors into the pores. Using theBruggemann theory, we have calculated the filled pores volume for each substance. Thesensor dynamic has been described by time-resolved measurements: due to the analysischamber miniaturization, the response time is only of 2 s. All these results have beencompared with data acquired on the same PSi structure before the anodic bonding process.

  9. Strained silicon as a new electro-optic material

    Jacobsen, Rune Shim; Andersen, Karin Nordström; Borel, Peter Ingo

    2006-01-01

    For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized1, 2. The slow progress within silicon optoelectronics, where electronic and optical...... functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon3. Recently, however, a continuous-wave Raman silicon laser was demonstrated4; if an effective modulator could also be realized in silicon, data...... processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top...

  10. Optical micro-cavities on silicon

    Dai, Daoxin; Liu, Erhu; Tan, Ying

    2018-01-01

    Silicon-based optical microcavities are very popular for many applications because of the ultra-compact footprint, easy scalability, and functional versatility. In this paper we give a discussion about the challenges of the optical microcavities on silicon and also give a review of our recent work, including the following parts. First, a near-"perfect" high-order MRR optical filter with a box-like filtering response is realized by introducing bent directional couplers to have sufficient coupling between the access waveguide and the microrings. Second, an efficient thermally-tunable MRR-based optical filter with graphene transparent nano-heater is realized by introducing transparent graphene nanoheaters. Thirdly, a polarization-selective microring-based optical filter is realized to work with resonances for only one of TE and TM polarizations for the first time. Finally, a on-chip reconfigurable optical add-drop multiplexer for hybrid mode- /wavelength-division-multiplexing systems is realized for the first time by monolithically integrating a mode demultiplexer, four MRR optical switches, and a mode multiplexer.

  11. Transformation optics on a silicon platform

    Gabrielli, Lucas H; Lipson, Michal

    2011-01-01

    Transformation optics allows the creation of innovative devices; however, its implementation in the optical domain remains challenging. We describe here our process to design and fabricate such devices using silicon as a platform for broad band operation in the optical domain. We discuss the approximations and methods employed to overcome the challenges of using dielectric materials as a platform for transformation optics, such as the anisotropy and gradient refractive index implementation. These encompass conformal and quasi-conformal mappings, and a dithering process to discretize and quantize the continuously inhomogeneous index function. We show examples of devices that we fabricated and tested, including the carpet invisibility cloak, a broad bandwidth light concentrator, and a perfect imaging device, known as Maxwell's fish eye lens. Finally, we touch on future directions under investigation to further develop transformation optics based on dielectric materials

  12. Effect resonance radiation transfer of excitation porous silicon to I sub 2 molecules sorbed in pores

    Zakharchenko, K V; Kuznetsov, M B; Chistyakov, A A; Karavanskij, V A

    2001-01-01

    One studies the effect of resonance radiation-free transfer of electronic excitation between silicon nanocrystals and iodine molecules sorbed in pores. The experiment procedure includes laser-induced luminescence and laser desorption mass spectrometry. One analyzes photoluminescence spectra prior to and upon iodine sorption. Excitation of iodine through the mechanism of resonance transfer is determined to result in desorption of the iodine sorbed molecules with relatively high kinetic energies (3-1 eV). One evaluated the peculiar distance of resonance transfer the approximate value of which was equal to 2 nm

  13. Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission

    Mula, Guido; Printemps, Tony; Licitra, Christophe; Sogne, Elisa; D’ Acapito, Francesco; Gambacorti, Narciso; Sestu, Nicola; Saba, Michele; Pinna, Elisa; Chiriu, Daniele; Ricci, Pier Carlo; Casu, Alberto; Quochi, Francesco; Mura, Andrea; Bongiovanni, Giovanni; Falqui, Andrea

    2017-01-01

    Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For porous Si, the long-standing failure to govern the clustering has been attributed to insufficient knowledge of the several, concomitant and complex processes occurring during the electrochemical Er-doping. We propose here an alternative road to solve the issue: instead of looking for an equilibrium between Er content and light emission using 1-2% Er, we propose to significantly increase the electrochemical doping level to reach the filling the porous silicon pores with luminescent Er-rich material. To better understand the intricate and superposing phenomena of this process, we exploit an original approach based on needle electron tomography, EXAFS and photoluminescence. Needle electron tomography surprisingly shows a heterogeneous distribution of Er content in the silicon thin pores that until now couldn't be revealed by the sole use of scanning electron microscopy compositional mapping. Besides, while showing that pore filling leads to enhanced photoluminescence emission, we demonstrate that the latter is originated from both erbium oxide and silicate. These results give a much deeper understanding of the photoluminescence origin down to nanoscale and could lead to novel approaches focused on noteworthy enhancement of Er-related photoluminescence in porous silicon.

  14. Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission

    Mula, Guido

    2017-07-14

    Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For porous Si, the long-standing failure to govern the clustering has been attributed to insufficient knowledge of the several, concomitant and complex processes occurring during the electrochemical Er-doping. We propose here an alternative road to solve the issue: instead of looking for an equilibrium between Er content and light emission using 1-2% Er, we propose to significantly increase the electrochemical doping level to reach the filling the porous silicon pores with luminescent Er-rich material. To better understand the intricate and superposing phenomena of this process, we exploit an original approach based on needle electron tomography, EXAFS and photoluminescence. Needle electron tomography surprisingly shows a heterogeneous distribution of Er content in the silicon thin pores that until now couldn\\'t be revealed by the sole use of scanning electron microscopy compositional mapping. Besides, while showing that pore filling leads to enhanced photoluminescence emission, we demonstrate that the latter is originated from both erbium oxide and silicate. These results give a much deeper understanding of the photoluminescence origin down to nanoscale and could lead to novel approaches focused on noteworthy enhancement of Er-related photoluminescence in porous silicon.

  15. Optical properties of phosphorescent nano-silicon electrochemically doped with terbium

    Gelloz, Bernard [Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Mentek, Romain; Koshida, Nobuyoshi [Tokyo University A and T, 2-24-16 Nakacho, Koganei, Tokyo 184-8588 (Japan)

    2012-12-15

    Hybrid thin films consisting of oxidized nano-silicon doped with terbium have been fabricated. Nano-silicon was formed by electrochemical etching of silicon wafers. Terbium was incorporated into nano-silicon pores by electrochemical deposition. Different oxidizing thermal treatments were applied to the films. The samples treated by high-pressure water vapor annealing (HWA) exhibited strong blue emission with a phosphorescent component, as previously reported by our group. The low temperature (260 C) HWA also led to strong emission from Tb{sup 3+} ions, whereas typical high temperature (900 C) treatment generally used to activate Tb{sup 3+} ions in silicon-based materials led to less luminescent samples. Spectroscopic and dynamic analyses suggest that terbium was incorporated as a separate oxide phase in the pores of the porous nano-silicon. The PL of the terbium phase and nano-silicon phase exhibit different temperature and excitation power dependences suggesting little optical or electronic interaction between the two phases. The luminescence of terbium is better activated at low temperature (260 C) than at high temperature (900 C). The hybrid material may find some applications in photonics, for instance as a display material. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. SOI silicon on glass for optical MEMS

    Larsen, Kristian Pontoppidan; Ravnkilde, Jan Tue; Hansen, Ole

    2003-01-01

    and a final sealing at the interconnects can be performed using a suitable polymer. Packaged MEMS on glass are advantageous within Optical MEMS and for sensitive capacitive devices. We report on experiences with bonding SOI to Pyrex. Uniform DRIE shallow and deep etching was achieved by a combination......A newly developed fabrication method for fabrication of single crystalline Si (SCS) components on glass, utilizing Deep Reactive Ion Etching (DRIE) of a Silicon On Insulator (SOI) wafer is presented. The devices are packaged at wafer level in a glass-silicon-glass (GSG) stack by anodic bonding...... of an optimized device layout and an optimized process recipe. The behavior of the buried oxide membrane when used as an etch stop for the through-hole etch is described. No harmful buckling or fracture of the membrane is observed for an oxide thickness below 1 μm, but larger and more fragile released structures...

  17. Optical characterisation of cubic silicon carbide

    Jackson, S.M.

    1998-09-01

    The varied properties of Silicon Carbide (SiC) are helping to launch the material into many new applications, particularly in the field of novel semiconductor devices. In this work, the cubic form of SiC is of interest as a basis for developing integrated optical components. Here, the formation of a suitable SiO 2 buried cladding layer has been achieved by high dose oxygen ion implantation. This layer is necessary for the optical confinement of propagating light, and hence optical waveguide fabrication. Results have shown that optical propagation losses of the order of 20 dB/cm are obtainable. Much of this loss can be attributed to mode leakage and volume scattering. Mode leakage is a function of the effective oxide thickness, and volume scattering related to the surface layer damage. These parameters have been shown to be controllable and so suggests that further reduction in the waveguide loss is feasible. Analysis of the layer growth mechanism by RBS, XTEM and XPS proves that SiO 2 is formed, and that the extent, of formation depends on implant dose and temperature. The excess carbon generated is believed to exit the oxide layer by a number of varying mechanisms. The result of this appears to be a number of stable Si-C-O intermediaries that, form regions to either depth extreme of the SiO 2 layer. Early furnace tests suggest a need to anneal at, temperatures approaching the melting point of the silicon substrate, and that the quality of the virgin material is crucial in controlling the resulting oxide growth. (author)

  18. Imaging of optic nerve head pore structure with motion corrected deeply penetrating OCT using tracking SLO

    Vienola, Kari V.; Braaf, Boy; Sheehy, Christy K.; Yang, Qiang; Tiruveedhula, Pavan; de Boer, Johannes F.; Roorda, Austin

    2013-01-01

    Purpose To remove the eye motion and stabilize the optical frequency domain imaging (OFDI) system for obtaining high quality images of the optic nerve head (ONH) and the pore structure of the lamina cribrosa. Methods An optical coherence tomography (OCT) instrument was combined with an active eye

  19. Stable silicon isotope signatures of marine pore waters - Biogenic opal dissolution versus authigenic clay mineral formation

    Ehlert, Claudia; Doering, Kristin; Wallmann, Klaus; Scholz, Florian; Sommer, Stefan; Grasse, Patricia; Geilert, Sonja; Frank, Martin

    2016-10-01

    Dissolved silicon isotope compositions have been analysed for the first time in pore waters (δ30SiPW) of three short sediment cores from the Peruvian margin upwelling region with distinctly different biogenic opal content in order to investigate silicon isotope fractionation behaviour during early diagenetic turnover of biogenic opal in marine sediments. The δ30SiPW varies between +1.1‰ and +1.9‰ with the highest values occurring in the uppermost part close to the sediment-water interface. These values are of the same order or higher than the δ30Si of the biogenic opal extracted from the same sediments (+0.3‰ to +1.2‰) and of the overlying bottom waters (+1.1‰ to +1.5‰). Together with dissolved silicic acid concentrations well below biogenic opal saturation, our collective observations are consistent with the formation of authigenic alumino-silicates from the dissolving biogenic opal. Using a numerical transport-reaction model we find that approximately 24% of the dissolving biogenic opal is re-precipitated in the sediments in the form of these authigenic phases at a relatively low precipitation rate of 56 μmol Si cm-2 yr-1. The fractionation factor between the precipitates and the pore waters is estimated at -2.0‰. Dissolved and solid cation concentrations further indicate that off Peru, where biogenic opal concentrations in the sediments are high, the availability of reactive terrigenous material is the limiting factor for the formation of authigenic alumino-silicate phases.

  20. Diffusion-controlled growth of hydrogen pores in aluminum-silicon castings: In situ observation and modeling

    Atwood, R.C.; Sridhar, S.; Zhang, W.; Lee, P.D.

    2000-01-24

    In situ observations were made of the nucleation and growth kinetics of hydrogen porosity during the directional solidification of aluminium-7 wt% silicon (Al7Si) with TiB{sub 2} grain refiner added, using an X-ray temperature gradient stage (XTGS). The effect of altering the solidification velocity on the growth rate and morphology of the porosity formed was characterized by tracking individual pores with digital analysis of the micro-focal video images. It was found that increasing the solidification velocity caused the pore radius to decrease and pore density to increase. Insight gained from the experimental results was used to develop a computational model of the evolution of hydrogen pores during solidification of aluminum-silicon cast alloys. The model solves for the diffusion-limited growth of the pores in spherical coordinates, using a deterministic solution of the grain nucleation and growth as a sub-model to calculate the parameters that depend upon the fraction solid. Sensitivity analysis was carried out to assess the effects of equiaxed grain density, pore density, initial hydrogen content and cooling rate. The model agrees with the experimental results within the resolution limits of the XTGS experiments performed.

  1. Correlation between surface microstructure and optical properties of porous silicon

    Saeideh Rhramezani Sani

    2007-12-01

    Full Text Available   We have studied the effect of increasing porosity and its microstructure surface variation on the optical and dielectric properties of porous silicon. It seems that porosity, as the surface roughness within the range of a few microns, shows quantum effect in the absorption and reflection process of porous silicon. Optical constants of porous silicon at normal incidence of light with wavelength in the range of 250-3000 nm have been calculated by Kramers-Kroning method. Our experimental analysis shows that electronic structure and dielectric properties of porous silicon are totally different from silicon. Also, it shows that porous silicon has optical response in the visible region. This difference was also verified by effective media approximation (EMA.

  2. High speed all-silicon optical modulator

    Marris-Morini, Delphine; Le Roux, Xavier; Pascal, Daniel; Vivien, Laurent; Cassan, Eric; Fedeli, Jean Marc; Damlencourt, Jean Francois; Bouville, David; Palomo, Jose; Laval, Suzanne

    2006-01-01

    Electrorefractive effect is experimentally demonstrated in an all-silicon optical structure. A highly doped Si P + layer is embedded in the intrinsic region of a PIN diode integrated in a SOI waveguide. Holes are confined at equilibrium around the P + layer. By applying a reverse bias to the diode, electrical field sweeps the carriers out of the active region. Free carrier concentration variations are responsible for local refractive index variations leading to an effective index variation of the waveguide optical mode and to an optical absorption variation. As a figure of merit, the product V π L π , determined from the measured effective index variation, is equal to 3.1 V cm. Furthermore, the device performances have theoretically been investigated. Estimations show that V π L π as small as 1 V cm are feasible using optimized structures. Response times lower than 2 ps are predicted, which gives the possibility to achieve very high-speed modulation. Furthermore, a temperature increases from 300 to 400 K does not change the index variation amplitude, and despite the carrier mobility reduction, response times are still lower than 2 ps

  3. Optical study of planar waveguides based on oxidized porous silicon impregnated with laser dyes

    Chouket, A. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT-6 rue de Kerampont, BP 80518, 22305 Lannion Cedex (France); Elhouichet, H. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia)], E-mail: habib.elhouichet@fst.rnu.tn; Oueslati, M. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia)

    2009-05-15

    Oxidized porous silicon optical planar waveguides were elaborated and impregnated with rhodamine B and rhodamine 6G. The waveguiding, absorption, and photoluminescence properties of these impregnated waveguides were studied. Successful impregnation of the structure with laser dyes is shown from photoluminescence and reflectivity measurements. Furthermore, the reflectivity spectra prove the homogenous incorporation of both dye molecules inside the pores of the matrices. The refractive indices of waveguide layers were determined before and after dye impregnation to indicate the conservation of guiding conditions. The optical losses in the visible wavelengths are studied as a function of dye concentration. The dye absorption is the main reason for these losses.

  4. Optical continuum generation on a silicon chip

    Jalali, Bahram; Boyraz, Ozdal; Koonath, Prakash; Raghunathan, Varun; Indukuri, Tejaswi; Dimitropoulos, Dimitri

    2005-08-01

    Although the Raman effect is nearly two orders of magnitude stronger than the electronic Kerr nonlinearity in silicon, under pulsed operation regime where the pulse width is shorter than the phonon response time, Raman effect is suppressed and Kerr nonlinearity dominates. Continuum generation, made possible by the non-resonant Kerr nonlinearity, offers a technologically and economically appealing path to WDM communication at the inter-chip or intra-chip levels. We have studied this phenomenon experimentally and theoretically. Experimentally, a 2 fold spectral broadening is obtained by launching ~4ps optical pulses with 2.2GW/cm2 peak power into a conventional silicon waveguide. Theoretical calculations, that include the effect of two-photon-absorption, free carrier absorption and refractive index change indicate that up to >30 times spectral broadening is achievable in an optimized device. The broadening is due to self phase modulation and saturates due to two photon absorption. Additionally, we find that free carrier dynamics also contributes to the spectral broadening and cause the overall spectrum to be asymmetric with respect to the pump wavelength.

  5. Planar Silicon Optical Waveguide Light Modulators

    Leistiko, Otto; Bak, H.

    1994-01-01

    that values in the nanosecond region should be possible, however, the measured values are high, 20 microseconds, due to the large area of the injector junctions, 1× 10¿2 cm2, and the limitations imposed by the detection circuit. The modulating properties of these devices are impressive, measurements......The results of an experimental investigation of a new type of optical waveguide based on planar technology in which the liglht guiding and modulation are achieved by exploiting free carrier effects in silicon are presented. Light is guided between the n+ substrate and two p+ regions, which also...... serve as carrier injectors for controling absorption. Light confinement of single mode devices is good, giving spot sizes of 9 ¿m FWHM. Insertion loss measurements indicate that the absorption losses for these waveguides are extremely low, less 1 dB/cm. Estimates of the switching speed indicate...

  6. Rationally designed porous silicon as platform for optical biosensors

    Priano, G.; Acquaroli, L.N.; Lasave, L.C.; Battaglini, F.; Arce, R.D.; Koropecki, R.R.

    2012-01-01

    Optical porous silicon multilayer structures are able to work as sensitive chemical sensors or biosensors based in their optical response. An algorithm to simulate the optical response of these multilayers was developed, considering the optical properties of the individual layers. The algorithm allows designing and customizing the porous silicon structures according to a given application. The results obtained by the simulation were experimentally verified; for this purpose different photonic structures were prepared, such as Bragg reflectors and microcavities. Some of these structures have been derivatized by the introduction of aminosilane groups on the porous silicon surface. The algorithm also permits to simulate the effects produced by a non uniform derivatization of the multilayer. - Highlights: ► Mesoporous silicon structure ► Functionalization of mesoporous silicon as sensors ► Design of the one-dimensional photonic crystal ► Simulation of non-uniformity in covering the sensor structure

  7. Rationally designed porous silicon as platform for optical biosensors

    Priano, G. [INQUIMAE, DQIAyQF, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon 2 (C1428EHA) Buenos Aires (Argentina); Acquaroli, L.N.; Lasave, L.C. [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Battaglini, F. [INQUIMAE, DQIAyQF, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon 2 (C1428EHA) Buenos Aires (Argentina); Arce, R.D., E-mail: rarce@intec.unl.edu.ar [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Departamento De Materiales, Facultad De Ingenieria Quimica, UNL, Santiago del Estero 2829 (S3000) Santa Fe (Argentina); Koropecki, R.R. [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Departamento De Materiales, Facultad De Ingenieria Quimica, UNL, Santiago del Estero 2829 (S3000) Santa Fe (Argentina)

    2012-08-01

    Optical porous silicon multilayer structures are able to work as sensitive chemical sensors or biosensors based in their optical response. An algorithm to simulate the optical response of these multilayers was developed, considering the optical properties of the individual layers. The algorithm allows designing and customizing the porous silicon structures according to a given application. The results obtained by the simulation were experimentally verified; for this purpose different photonic structures were prepared, such as Bragg reflectors and microcavities. Some of these structures have been derivatized by the introduction of aminosilane groups on the porous silicon surface. The algorithm also permits to simulate the effects produced by a non uniform derivatization of the multilayer. - Highlights: Black-Right-Pointing-Pointer Mesoporous silicon structure Black-Right-Pointing-Pointer Functionalization of mesoporous silicon as sensors Black-Right-Pointing-Pointer Design of the one-dimensional photonic crystal Black-Right-Pointing-Pointer Simulation of non-uniformity in covering the sensor structure.

  8. Magneto-optical non-reciprocal devices in silicon photonics

    Yuya Shoji

    2014-01-01

    Full Text Available Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm.

  9. Nonlinear Silicon Photonic Signal Processing Devices for Future Optical Networks

    Cosimo Lacava

    2017-01-01

    Full Text Available In this paper, we present a review on silicon-based nonlinear devices for all optical nonlinear processing of complex telecommunication signals. We discuss some recent developments achieved by our research group, through extensive collaborations with academic partners across Europe, on optical signal processing using silicon-germanium and amorphous silicon based waveguides as well as novel materials such as silicon rich silicon nitride and tantalum pentoxide. We review the performance of four wave mixing wavelength conversion applied on complex signals such as Differential Phase Shift Keying (DPSK, Quadrature Phase Shift Keying (QPSK, 16-Quadrature Amplitude Modulation (QAM and 64-QAM that dramatically enhance the telecom signal spectral efficiency, paving the way to next generation terabit all-optical networks.

  10. Silicone oil migration along the optic nerve after intraocular tamponade.

    Gargallo Vaamonde, Á; Ibáñez Muñoz, D; Salceda Artola, J; Garatea Aznar, P; Zalazar, R; Yanguas Barea, N

    2016-11-01

    We present a case of silicone oil migration trough the optic nerve in a diabetic patient with retinal detachment and review the etiologic mechanism and clinical implications. Intracranial silicone oil migration is an uncommon complication associated with silicone oil tamponade. Copyright © 2016 Sociedad Española de Oftalmología. Publicado por Elsevier España, S.L.U. All rights reserved.

  11. Ultra-Fast Optical Signal Processing in Nonlinear Silicon Waveguides

    Oxenløwe, Leif Katsuo; Galili, Michael; Pu, Minhao

    2011-01-01

    We describe recent demonstrations of exploiting highly nonlinear silicon nanowires for processing Tbit/s optical data signals. We perform demultiplexing and optical waveform sampling of 1.28 Tbit/s and wavelength conversion of 640 Gbit/s data signals.......We describe recent demonstrations of exploiting highly nonlinear silicon nanowires for processing Tbit/s optical data signals. We perform demultiplexing and optical waveform sampling of 1.28 Tbit/s and wavelength conversion of 640 Gbit/s data signals....

  12. Effect of etching current density on microstructure and NH3-sensing properties of porous silicon with intermediate-sized pores

    Li, Mingda; Hu, Ming; Zeng, Peng; Ma, Shuangyun; Yan, Wenjun; Qin, Yuxiang

    2013-01-01

    In this work, porous silicon with intermediate-sized pores (intermediate–PS) was prepared by using galvanostatic electrochemical etching method and the effect toward sensing response characteristics of NH 3 gas was also studied. The morphology and surface chemical bonds of intermediate–PS were characterized by using field emission scanning electron microscope (FESEM) and Fourier transform infrared spectroscopy (FTIR), respectively. The results showed the intermediate–PS microstructure can be significantly modulated by the etching current density. Moreover, the freshly prepared intermediate–PS surface could achieve reliable passivation after storage in ethanol. Furthermore, the gas-sensing measurements of the intermediate–PS sensors were carried out versus different concentrations of NH 3 . The PS sensor exhibited good NH 3 -sensing performances at room temperature owing to its unique microstructure features, including large specific surface area and highly ordered pore channels. In addition, the conceivable pore formation mechanism as well as gas sensing mechanism was also discussed

  13. Quantitative research on skin pore widening using a stereoimage optical topometer and Sebutape.

    Jo, Ho Youn; Yu, Dong Soo; Oh, Chil Hwan

    2007-05-01

    The treatment of skin pore widening is concerned with cosmetics sciences, but an objective and quantitative measurement method of the severity of skin pore widening has not been developed. In this study, bioengineering methods were applied to evaluate skin pore widening. The results from bioengineering measurements were compared with clinical visual assessment. In order to quantify skin pore widening, three-dimensional data of skin pore were produced by a stereoimage optical topometer (SOT). The sizes of follicular infundibulum were measured quantitatively, with reserved sebum by Sebutape. 50 female volunteers were divided into two groups. Group A was tested by the cosmetics including active ingredient and group B by placebo. The constricting effect of skin pores by cosmetics was measured for immediate effect and long-term effect. In the immediate effect, there was no statistical difference between groups A and B in visual scoring. In SOT, the size of the skin pores of group A had changed after application of cosmetics but there were no changes in group B. In the long-term effect, there was no statistical difference between groups A and B in visual scoring. TA, TV, SA, and SV of skin pores of groups A and B were decreased in 3 and 6 months by SOT. In Sebutape measurement, there was decreased volume of reserved sebum in groups A and B. The result of the Sebutape study was similar to that of SOT. Evaluation of skin pore change by visual assessment is difficult, but bioengineering tools are more reliable and useful methods for the assessment of skin pore change.

  14. Porous silicon platform for optical detection of functionalized magnetic particles biosensing.

    Ko, Pil Ju; Ishikawa, Ryousuke; Sohn, Honglae; Sandhu, Adarsh

    2013-04-01

    The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon (PSi) for optical biosensing using functionalized magnetic particles. Combining magnetically labeled biomolecules with PSi offers a rapid and one-step immunoassay and real-time detection by magnetic manipulation of superparamagnetic beads (SPBs) functionalized with target molecules onto corresponding probe molecules immobilized inside nano-pores of PSi. We first give an introduction to electrochemical and chemical etching procedures used to fabricate a wide range of PSi structures. Next, we describe the basic properties of PSi and underlying optical scattering mechanisms that govern their unique optical properties. Finally, we give examples of our experiments that demonstrate the potential of combining PSi and magnetic beads for real-time point of care diagnostics.

  15. Pore size is a critical parameter for obtaining sustained protein release from electrochemically synthesized mesoporous silicon microparticles

    Ester L. Pastor

    2015-10-01

    Full Text Available Mesoporous silicon has become a material of high interest for drug delivery due to its outstanding internal surface area and inherent biodegradability. We have previously reported the preparation of mesoporous silicon microparticles (MS-MPs synthesized by an advantageous electrochemical method, and showed that due to their inner structure they can adsorb proteins in amounts exceeding the mass of the carrier itself. Protein release from these MS-MPs showed low burst effect and fast delivery kinetics with complete release in a few hours. In this work, we explored if tailoring the size of the inner pores of the particles would retard the protein release process. To address this hypothesis, three new MS-MPs prototypes were prepared by electrochemical synthesis, and the resulting carriers were characterized for morphology, particle size, and pore structure. All MS-MP prototypes had 90 µm mean particle size, but depending on the current density applied for synthesis, pore size changed between 5 and 13 nm. The model protein α-chymotrypsinogen was loaded into MS-MPs by adsorption and solvent evaporation. In the subsequent release experiments, no burst release of the protein was detected for any prototype. However, prototypes with larger pores (>10 nm reached 100% release in 24–48 h, whereas prototypes with small mesopores (<6 nm still retained most of their cargo after 96 h. MS-MPs with ∼6 nm pores were loaded with the osteogenic factor BMP7, and sustained release of this protein for up to two weeks was achieved. In conclusion, our results confirm that tailoring pore size can modify protein release from MS-MPs, and that prototypes with potential therapeutic utility for regional delivery of osteogenic factors can be prepared by convenient techniques.

  16. Type IIA photosensitivity and formation of pores in optical fibers under intense ultraviolet irradiation

    Kukushkin, S. A.; Shlyagin, M. G.; Swart, P. L.; Chtcherbakov, A. A.; Osipov, A. V.

    2007-01-01

    Formation of the type IIA Bragg gratings in germanosilicate optical fibers is studied. We report the observation of such a type of gratings in the standard single-mode fiber (Corning SMF-28) under different experimental conditions. A mechanism for the type IIA photosensitivity in optical fibers is proposed which is based on nucleation and evolution of pores from vacancy-type defects in fiber areas where a high level of mechanical stress is induced under intense ultraviolet (UV) light. Evolution of fiber core temperature under influence of a single 20 ns light pulse from a KrF excimer laser was measured and compared with theoretical calculations. It was shown that transient thermoinduced stress in the fiber core can achieve a level sufficient for effective nucleation of pores. A theory describing formation of pores in optical fibers has been developed and was used to estimate the pore nucleation rate, concentration, and other parameters of pore evolution for different levels of UV fluence and fiber core stress

  17. Ultra-high-speed Optical Signal Processing using Silicon Photonics

    Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

    with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...... of the ultra-fast nonlinear response of silicon photonic waveguides. These chips offer ultra-broadband wavelength operation, ultra-high timing resolution and ultra-fast response, and when used appropriately offer energy-efficient switching. In this presentation we review some all-optical functionalities based...... on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show...

  18. A method of evaluating facial pores using optical 2D images and analysis of age-dependent changes in facial pores in Koreans.

    Jang, S I; Kim, E J; Lee, H K

    2018-05-01

    Enlarged facial pores and changes in pore area are of concern for cosmetic reasons. To evaluate pores, measuring tools based on 3D methodology are used. Yet, these methods are limited by their measuring ranges. In this study, we performed pore analysis by measuring the whole face using 2D optical images. We further sought to understand how the pores of Korean women change with age. One hundred sixteen Korean female subjects aged 20-60 years were recruited for this study. Facial images were taken using the VISIA-CR ® adjusted light source. Images were processed using Image-Pro Plus 9.2. Statistical significance was assumed when P pore area, as indicated by pixel count, gradually increased in patients through their 40s, but decreased through their 50s and 60s. Facial pores generally exhibited directionality through the patients' 30s, but this isotropic feature was more prominent in their 50s. Pore elongation increased stepwise. The first increase occurred during the transition from patients' 30s to their 40s and the second increase occurred during the transition from patients' 50s to their 60s. This indicated that the pores deformed from a circular shape to a long elliptic shape over time. A new evaluation method using 2D optical images facilitates the analysis of pore distribution and elongation throughout the entire cheek. This is an improvement over an analysis of pores over a narrow region of interest. © 2018 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  19. Pore volume is most highly correlated with the visual assessment of skin pores.

    Kim, S J; Shin, M K; Back, J H; Koh, J S

    2014-11-01

    Many studies have been focused on evaluating assessment techniques for facial pores amid growing attention on skin care. Ubiquitous techniques used to assess the size of facial pores include visual assessment, cross-section images of the skin surface, and profilometric analysis of silicone replica of the facial skin. In addition, there are indirect assessment methods, including observation of pores based on confocal laser scanning microscopy and the analysis of sebum secretion and skin elasticity. The aim of this study was to identify parameters useful in estimating pore of surface in normal skin. The severity of pores on the cheek area by frontal optical images was divided on a 0-6 scale with '0' being faint and small pore and '6' being obvious and large pore. After the photos of the frontal cheek of 32 women aged between 35 and 49 were taken, the size of their pores was measured on a 0-6 scale; and the correlation between visual grading of pore and various evaluations (pore volume by 3-D image, pore area and number by Optical Image Analyzer) contributing to pore severity investigated using direct, objective, and noninvasive evaluations. The visual score revealed that the size of pores was graded on a 1-6 scale. Visual grading of pore was highly correlated with pore volume measured from 3-D images and pore area measured from 2-D optical images in the order (P pore was also slightly correlated with the number of pores in size of over 0.04 mm(2) (P pore score and pore volume can be explained by 3-D structural characteristics of pores. It is concluded that pore volume and area serve as useful parameters in estimating pore of skin surface. © 2014 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  20. Optical and microstructural investigations of porous silicon

    Raman scattering and photoluminescence (PL) measurements on (100) oriented -type crystalline silicon (-Si) and porous silicon (PS) samples were carried out. PS samples were prepared by anodic etching of -Si under the illumination of light for different etching times of 30, 60 and 90 min. Raman scattering from the ...

  1. All-Optical Signal Processing using Silicon Devices

    Oxenløwe, Leif Katsuo; Pu, Minhao; Ding, Yunhong

    2014-01-01

    This paper presents an overview of recent wo rk on the use of silicon waveguides for processing optical data signals. We will describe ultra-fast, ultra-broadband, polarisation-insensitive and phase-sensitive applications including processing of spectrally-efficient data formats and optical phase...

  2. Optical characterization of porous silicon microcavities for glucose oxidase biosensing

    Palestino, G.; Agarwal, V.; Garcia, D. B.; Legros, R.; Pérez, E.; Gergely, C.

    2008-04-01

    PSi microcavity (PSiMc) is characterized by a narrow resonance peak in the optical spectrum that is very sensitive to small changes in the refractive index. We report that the resonant optical cavities of PSi structures can be used to enhance the detection of labeled fluorescent biomolecules. Various PSi configurations were tested in order to compare the optical response of the PSi devices to the capture of organic molecules. Morphological and topographical analyses were performed on PSiMc using Atomic Force (AFM) and Scanning Electron (SEM) microscopies. The heterogeneity in pores lengths resulting from etching process assures a better penetration of larger molecules into the pores and sensor sensitivity depends on the pore size. Molecular detection is monitored by the successive red shifts in the reflectance spectra after the stabilization of PSiMc with 3-aminopropyltriethoxysilane (APTES). The glucose oxidase was cross linked into the PSiMc structures following a silane-glutaraldehyde (GTA) chemistry.

  3. Porous silicon: Synthesis and optical properties

    Naddaf, M.; Awad, F.

    2006-01-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  4. Porous silicon: Synthesis and optical properties

    Naddaf, M.; Awad, F.

    2006-06-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  5. GHz-rate optical parametric amplifier in hydrogenated amorphous silicon

    Wang, Ke-Yao; Foster, Amy C

    2015-01-01

    We demonstrate optical parametric amplification operating at GHz-rates at telecommunications wavelengths using a hydrogenated amorphous silicon waveguide through the nonlinear optical process of four-wave mixing. We investigate how the parametric amplification scales with repetition rate. The ability to achieve amplification at GHz-repetition rates shows hydrogenated amorphous silicon’s potential for telecommunication applications and a GHz-rate optical parametric oscillator. (paper)

  6. Experience with parallel optical link for the CDF silicon detector

    Hou, S.

    2003-01-01

    The Dense Optical Interface Module (DOIM) is a byte-wide optical link developed for the Run II upgrade of the CDF silicon tracking system [1]. The module consists of a transmitter with a laser-diode array for conversion of digitized detector signals to light outputs, a 22 m optical fiber ribbon cable for light transmission, and a receiver converting the light pulses back to electrical signals. We report on the design feature, characteristics, and radiation tolerance

  7. Enhanced optical performance of electrochemically etched porous silicon carbide

    Naderi, N; Hashim, M R; Saron, K M A; Rouhi, J

    2013-01-01

    Porous silicon carbide (PSC) was successfully synthesized via electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using various current densities. The cyclic voltammograms of SiC dissolution show that illumination is required for the accumulation of carriers at the surface, followed by surface oxidation and dissolution of the solid. The morphological and optical characterizations of PSC were reported. Scanning electron microscopy results demonstrated that the current density can be considered an important etching parameter that controls the porosity and uniformity of PSC; hence, it can be used to optimize the optical properties of the porous samples. (paper)

  8. Silicon Nanowires for All-Optical Signal Processing in Optical Communication

    Pu, Minhao; Hu, Hao; Ji, Hua

    2012-01-01

    Silicon (Si), the second most abundant element on earth, has dominated in microelectronics for many decades. It can also be used for photonic devices due to its transparency in the range of optical telecom wavelengths which will enable a platform for a monolithic integration of optics...... and microelectronics. Silicon photonic nanowire waveguides fabricated on silicon-on-insulator (SOI) substrates are crucial elements in nano-photonic integrated circuits. The strong light confinement in nanowires induced by high index contrast SOI material enhances the nonlinear effects in the silicon nanowire core...... such as four-wave mixing (FWM) which is an imperative process for optical signal processing. Since the current mature silicon fabrication technology enables a precise dimension control on nanowires, dispersion engineering can be performed by tailoring nanowire dimensions to realize an efficient nonlinear...

  9. Optical nose based on porous silicon photonic crystal infiltrated with ionic liquids

    Zhang, Haijuan [Institute of Microanalytical System, Department of Chemistry, Zhejiang University, Hangzhou, 3100058 (China); Zhejiang Academy of Medical Sciences, Hangzhou, 310013 (China); Lin, Leimiao; Liu, Dong; Chen, Qiaofen [Institute of Microanalytical System, Department of Chemistry, Zhejiang University, Hangzhou, 3100058 (China); Wu, Jianmin, E-mail: wjm-st1@zju.edu.cn [Institute of Microanalytical System, Department of Chemistry, Zhejiang University, Hangzhou, 3100058 (China)

    2017-02-08

    A photonic-nose for the detection and discrimination of volatile organic compounds (VOCs) was constructed. Each sensing element on the photonic sensor array was formed by infiltrating a specific type of ionic liquid (IL) into the pore channel of a patterned porous silicon (PSi) chip. Upon exposure to VOC, the density of IL dramatically decreased due to the nano-confinement effect. As a result, the IL located in pore channel expanded its volume and protrude out of the pore channel, leading to the formation of microdroplets on the PSi surface. These VOC-stimulated microdroplets could scatter the light reflected from the PSi rugate filter, thereby producing an optical response to VOC. The intensity of the optical response produced by IL/PSi sensor mainly depends on the size and shape of microdroplets, which is related to the concentration of VOC and the physi-chemical propertied of ILs. For ethanol vapor, the optical response has linear relationship with its relative vapor pressure within 0–60%. The LOD of the IL/PSi sensor for ethanol detection is calculated to be 1.3 ppm. It takes around 30 s to reach a full optical response, while the time for recovery is less than 1 min. In addition, the sensor displayed good stability and reproducibility. Owing to the different molecular interaction between IL and VOC, the ILs/PSi sensor array can generate a unique cross-reactive “fingerprint” in response to a specific type of VOC analyte. With the assistance of image technologies and principle components analysis (PCA), rapid discrimination of VOC analyte could be achieved based on the pattern recognition of photonic sensor array. The technology established in this work allows monitoring in-door air pollution in a visualized way. - Highlights: • Ionic liquids confined in the pore channel of porous silicon (PSi) can form microdroplets on the PSi surface upon exposure to VOCs. • These VOC-stimulated microdroplets could scattered the light reflected from the PSi rugate

  10. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    Hussain, Muhammad Mustafa

    2013-05-30

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  11. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

    2013-01-01

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  12. Silicon-based optical integrated circuits for terabit communication networks

    Svidzinsky, K K

    2003-01-01

    A brief review is presented of the development of silicon-based optical integrated circuits used as components in modern all-optical communication networks with the terabit-per-second transmission capacity. The designs and technologies for manufacturing these circuits are described and the problems related to their development and application in WDM communication systems are considered. (special issue devoted to the memory of academician a m prokhorov)

  13. Last Advances in Silicon-Based Optical Biosensors.

    Fernández Gavela, Adrián; Grajales García, Daniel; Ramirez, Jhonattan C; Lechuga, Laura M

    2016-02-24

    We review the most important achievements published in the last five years in the field of silicon-based optical biosensors. We focus specially on label-free optical biosensors and their implementation into lab-on-a-chip platforms, with an emphasis on developments demonstrating the capability of the devices for real bioanalytical applications. We report on novel transducers and materials, improvements of existing transducers, new and improved biofunctionalization procedures as well as the prospects for near future commercialization of these technologies.

  14. Luminescence and optical absorption determination in porous silicon

    Nogal, U.; Calderon, A.; Marin, E.; Rojas T, J. B.; Juarez, A. G.

    2012-10-01

    We applied the photoacoustic spectroscopy technique in order to obtain the optical absorption spectrum in porous silicon samples prepared by electrochemical anodic etching on n-type, phosphorous doped, (100)-oriented crystal-line silicon wafer with thickness of 300 μm and 1-5 ωcm resistivity. The porous layers were prepared with etching times of 13, 20, 30, 40 and 60 minutes. Also, we realized a comparison among the optical absorption spectrum with the photoluminescence and photo reflectance ones, both obtained at room temperature. Our results show that the absorption spectrum of the samples of porous silicon depends notably of the etching time an it consist of two distinguishable absorption bands, one in the Vis region and the other one in the UV region. (Author)

  15. Silicon-on-Insulator Nanowire Based Optical Waveguide Biosensors

    Li, Mingyu; Liu, Yong; Chen, Yangqing; He, Jian-Jun

    2016-01-01

    Optical waveguide biosensors based on silicon-on-insulator (SOI) nanowire have been developed for label free molecular detection. This paper reviews our work on the design, fabrication and measurement of SOI nanowire based high-sensitivity biosensors employing Vernier effect. Biosensing experiments using cascaded double-ring sensor and Mach-Zehnder- ring sensor integrated with microfluidic channels are demonstrated (paper)

  16. Phase-sensitive optical processing in silicon waveguides

    Petermann, Klaus; Gajda, A.; Dziallas, Claudia

    2015-01-01

    Parametric optical signal processing is reviewed for silicon nano-rib-waveguides with a reverse-biased pin-junction. Phase-sensitive parametric amplification with a phase-sensitive extinction of more than 20 dB has been utilized for the regeneration of DPSK signals...

  17. Optical modulation in silicon-vanadium dioxide photonic structures

    Miller, Kevin J.; Hallman, Kent A.; Haglund, Richard F.; Weiss, Sharon M.

    2017-08-01

    All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO2) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO2 length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO2 all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.

  18. Optical nose based on porous silicon photonic crystal infiltrated with ionic liquids.

    Zhang, Haijuan; Lin, Leimiao; Liu, Dong; Chen, Qiaofen; Wu, Jianmin

    2017-02-08

    A photonic-nose for the detection and discrimination of volatile organic compounds (VOCs) was constructed. Each sensing element on the photonic sensor array was formed by infiltrating a specific type of ionic liquid (IL) into the pore channel of a patterned porous silicon (PSi) chip. Upon exposure to VOC, the density of IL dramatically decreased due to the nano-confinement effect. As a result, the IL located in pore channel expanded its volume and protrude out of the pore channel, leading to the formation of microdroplets on the PSi surface. These VOC-stimulated microdroplets could scatter the light reflected from the PSi rugate filter, thereby producing an optical response to VOC. The intensity of the optical response produced by IL/PSi sensor mainly depends on the size and shape of microdroplets, which is related to the concentration of VOC and the physi-chemical propertied of ILs. For ethanol vapor, the optical response has linear relationship with its relative vapor pressure within 0-60%. The LOD of the IL/PSi sensor for ethanol detection is calculated to be 1.3 ppm. It takes around 30 s to reach a full optical response, while the time for recovery is less than 1 min. In addition, the sensor displayed good stability and reproducibility. Owing to the different molecular interaction between IL and VOC, the ILs/PSi sensor array can generate a unique cross-reactive "fingerprint" in response to a specific type of VOC analyte. With the assistance of image technologies and principle components analysis (PCA), rapid discrimination of VOC analyte could be achieved based on the pattern recognition of photonic sensor array. The technology established in this work allows monitoring in-door air pollution in a visualized way. Copyright © 2016 Elsevier B.V. All rights reserved.

  19. Optical properties of amorphous silicon: Some problem areas

    Ravindra, N.M.; Chelle, F. de; Ance, C.; Ferraton, J.P.; Berger, J.M.; Coulibaly, S.P.

    1983-08-01

    In this presentation we essentially attempt to throw light on some problem areas concerning the various optical properties of amorphous silicon. The problems seem to emerge from the classical methods employed to determine the optical properties like the optical gap, urbach tail parameter and other related characteristics. Additional problems have emerged in recent years by virtue of many attempts to generalize the property-behaviour relationships for amorphous silicon without attributing any importance to the method of preparation of the films. It should be noted here that although many authors believe disorder to be the controlling parameter, we are of the opinion that at least for films containing fairly large concentrations of hydrogen, the hydrogen concentration has an equally important role to play. The present study has been carried out for films prepared by glow-discharge and chemical vapour deposition. (author)

  20. FDTD modeling of anisotropic nonlinear optical phenomena in silicon waveguides.

    Dissanayake, Chethiya M; Premaratne, Malin; Rukhlenko, Ivan D; Agrawal, Govind P

    2010-09-27

    A deep insight into the inherent anisotropic optical properties of silicon is required to improve the performance of silicon-waveguide-based photonic devices. It may also lead to novel device concepts and substantially extend the capabilities of silicon photonics in the future. In this paper, for the first time to the best of our knowledge, we present a three-dimensional finite-difference time-domain (FDTD) method for modeling optical phenomena in silicon waveguides, which takes into account fully the anisotropy of the third-order electronic and Raman susceptibilities. We show that, under certain realistic conditions that prevent generation of the longitudinal optical field inside the waveguide, this model is considerably simplified and can be represented by a computationally efficient algorithm, suitable for numerical analysis of complex polarization effects. To demonstrate the versatility of our model, we study polarization dependence for several nonlinear effects, including self-phase modulation, cross-phase modulation, and stimulated Raman scattering. Our FDTD model provides a basis for a full-blown numerical simulator that is restricted neither by the single-mode assumption nor by the slowly varying envelope approximation.

  1. Mechanically flexible optically transparent porous mono-crystalline silicon substrate

    Rojas, Jhonathan Prieto; Syed, Ahad A.; Hussain, Muhammad Mustafa

    2012-01-01

    For the first time, we present a simple process to fabricate a thin (≥5μm), mechanically flexible, optically transparent, porous mono-crystalline silicon substrate. Relying only on reactive ion etching steps, we are able to controllably peel off a thin layer of the original substrate. This scheme is cost favorable as it uses a low-cost silicon <100> wafer and furthermore it has the potential for recycling the remaining part of the wafer that otherwise would be lost and wasted during conventional back-grinding process. Due to its porosity, it shows see-through transparency and potential for flexible membrane applications, neural probing and such. Our process can offer flexible, transparent silicon from post high-thermal budget processed device wafer to retain the high performance electronics on flexible substrates. © 2012 IEEE.

  2. Characterization of electrical and optical properties of silicon based materials

    Jia, Guobin

    2009-12-04

    characteristic DRL lines D1 to D4 has been detected, indicating the dislocations in the Alile sample are relatively clean. Test p-n junction diodes with dislocation networks (DNs) produced by silicon wafer direct bonding have been investigated by EBIC technique. Charge carriers collection and electrical conduction phenomena by the DNs were observed. Inhomogeneities in the charge collection were detected in n- and p-type samples under appropriate beam energy. The diffusion lengths in the thin top layer of silicon-on-insulator (SOI) have been measured by EBIC with full suppression of the surface recombination at the buried oxide (BOX) layer and at surface of the top layer by biasing method. The measured diffusion length is several times larger than the layer thickness. Silicon nanostructures are another important subject of this work. Electrical and optical properties of various silicon based materials like silicon nanowires, silicon nano rods, porous silicon, and Si/SiO{sub 2} multi quantum wells (MQWs) samples were investigated in this work. Silicon sub-bandgap infrared (IR) luminescence around 1570 nm was found in silicon nanowires, nano rods and porous silicon. PL measurements with samples immersed in different liquid media, for example, in aqueous HF (50%), concentrated H{sub 2}SO{sub 4} (98%) and H{sub 2}O{sub 2} established that the subbandgap IR luminescence originated from the Si/SiO{sub x} interface. EL in the sub-bandgap IR range has been observed in simple devices prepared on porous silicon and MQWs at room temperature. (orig.)

  3. Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

    Sahli, Florent

    2017-10-09

    Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

  4. Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

    Sahli, Florent; Kamino, Brett A.; Werner, Jé ré mie; Brä uninger, Matthias; Paviet-Salomon, Bertrand; Barraud, Loris; Monnard, Raphaë l; Seif, Johannes Peter; Tomasi, Andrea; Jeangros, Quentin; Hessler-Wyser, Aï cha; De Wolf, Stefaan; Despeisse, Matthieu; Nicolay, Sylvain; Niesen, Bjoern; Ballif, Christophe

    2017-01-01

    Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

  5. Last Advances in Silicon-Based Optical Biosensors

    Adrián Fernández Gavela

    2016-02-01

    Full Text Available We review the most important achievements published in the last five years in the field of silicon-based optical biosensors. We focus specially on label-free optical biosensors and their implementation into lab-on-a-chip platforms, with an emphasis on developments demonstrating the capability of the devices for real bioanalytical applications. We report on novel transducers and materials, improvements of existing transducers, new and improved biofunctionalization procedures as well as the prospects for near future commercialization of these technologies.

  6. Optical dielectric function of intrinsic amorphous silicon

    Ching, W.Y.; Lin, C.C.

    1978-01-01

    The imaginary part of the optical dielectric function epsilon 2 (ω) has been calculated using a continuous-random-tetrahedral network as the structural model for the atomic positions. Here the electronic energies and wave functions are determined by first-principles calculations with the method of linear combinations of atomic orbitals (LCAO), and the momentum matrix elements are evaluated directly from the LCAO wave functions. The calculated dielectric function is in good overall agreement with experiment. At energies within 1 eV above the threshold, the epsilon 2 curve shows some structures that are due to interband transitions between the localized states near the band gap

  7. Quantum confinement and disorder in porous silicon: effects on the optical and transport properties

    Amato, G.; Boarino, L.; Brunetto, N.; Rossi, A.M.

    1996-01-01

    In this report the authors report new optical data showing that disorder in porous silicon leads to strong carrier localisation. Light emission in PS (porous silicon) is suggested to occur through transitions involving localized states

  8. 160-Gb/s Silicon All-Optical Packet Switch for Buffer-less Optical Burst Switching

    Hu, Hao; Ji, Hua; Pu, Minhao

    2015-01-01

    We experimentally demonstrate a 160-Gb/s Ethernet packet switch using an 8.6-mm-long silicon nanowire for optical burst switching, based on cross phase modulation in silicon. One of the four packets at the bit rate of 160 Gb/s is switched by an optical control signal using a silicon based 1 × 1 all......-optical packet switch. Error free performance (BER silicon packet switch based optical burst switching, which might be desirable for high-speed interconnects within a short...

  9. Optical performance of hybrid porous silicon-porous alumina multilayers

    Cencha, L. G.; Antonio Hernández, C.; Forzani, L.; Urteaga, R.; Koropecki, R. R.

    2018-05-01

    In this work, we study the optical response of structures involving porous silicon and porous alumina in a multi-layered hybrid structure. We performed a rational design of the optimal sequence necessary to produce a high transmission and selective filter, with potential applications in chemical and biosensors. The combination of these porous materials can be used to exploit its distinguishing features, i.e., high transparency of alumina and high refractive index of porous silicon. We assembled hybrid microcavities with a central porous alumina layer between two porous silicon Bragg reflectors. In this way, we constructed a Fabry-Perot resonator with high reflectivity and low absorption that improves the quality of the filter compared to a microcavity built only with porous silicon or porous alumina. We explored a simpler design in which one of the Bragg reflectors is replaced by the aluminium that remains bound to the alumina after its fabrication. We theoretically explored the potential of the proposal and its limitations when considering the roughness of the layers. We found that the quality of a microcavity made entirely with porous silicon shows a limit in the visible range due to light absorption. This limitation is overcome in the hybrid scheme, with the roughness of the layers determining the ultimate quality. Q-factors of 220 are experimentally obtained for microcavities supported on aluminium, while Q-factors around 600 are reached for microcavities with double Bragg reflectors, centred at 560 nm. This represents a four-fold increase with respect to the optimal porous silicon microcavity at this wavelength.

  10. Quantitative analysis of vascular colonisation and angio-conduction in porous silicon-substituted hydroxyapatite with various pore shapes in a chick chorioallantoic membrane (CAM) model.

    Magnaudeix, Amandine; Usseglio, Julie; Lasgorceix, Marie; Lalloue, Fabrice; Damia, Chantal; Brie, Joël; Pascaud-Mathieu, Patricia; Champion, Eric

    2016-07-01

    The development of scaffolds for bone filling of large defects requires an understanding of angiogenesis and vascular guidance, which are crucial processes for bone formation and healing. There are few investigations on the ability of a scaffold to support blood vessel guidance and it this is of great importance because it relates to the quality and dispersion of the blood vessel network. This work reports an analysis of vascularisation of porous silicon-substituted hydroxyapatite (SiHA) bioceramics and the effects of pore shape on vascular guidance using an expedient ex ovo model, the chick embryo chorioallantoic membrane (CAM) assay. Image analysis of vascularised implants assessed the vascular density, fractal dimension and diameter of blood vessels at two different scales (the whole ceramic and pores alone) and was performed on model SiHA ceramics harbouring pores of various cross-sectional geometries (circles, square, rhombus, triangles and stars). SiHA is a biocompatible material which allows the conduction of blood vessels on its surface. The presence of pores did not influence angiogenesis related-parameters (arborisation, fractal dimension) but pore geometry affected the blood vessel guidance and angio-conductive potential (diameter and number of the blood vessels converging toward the pores). The measured angles of pore cross-section modulated the number and diameter of blood vessels converging to pores, with triangular pores appearing of particular interest. This result will be used for shaping ceramic scaffolds with specific porous architecture to promote vascular colonisation and osteointegration. An expedient and efficient method, using chick embryo chorioallantoic membrane (CAM) assays, has been set up to characterise quantitatively the angiogenesis and the vascular conduction in scaffolds. This approach complements the usual cell culture assays and could replace to a certain extent in vivo experiments. It was applied to silicon

  11. Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

    Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

    2011-01-01

    We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

  12. Silicon nanowires for ultra-fast and ultrabroadband optical signal processing

    Ji, Hua; Hu, Hao; Pu, Minhao

    2015-01-01

    In this paper, we present recent research on silicon nanowires for ultra-fast and ultra-broadband optical signal processing at DTU Fotonik. The advantages and limitations of using silicon nanowires for optical signal processing are revealed through experimental demonstrations of various optical...

  13. Optical nano artifact metrics using silicon random nanostructures

    Matsumoto, Tsutomu; Yoshida, Naoki; Nishio, Shumpei; Hoga, Morihisa; Ohyagi, Yasuyuki; Tate, Naoya; Naruse, Makoto

    2016-08-01

    Nano-artifact metrics exploit unique physical attributes of nanostructured matter for authentication and clone resistance, which is vitally important in the age of Internet-of-Things where securing identities is critical. However, expensive and huge experimental apparatuses, such as scanning electron microscopy, have been required in the former studies. Herein, we demonstrate an optical approach to characterise the nanoscale-precision signatures of silicon random structures towards realising low-cost and high-value information security technology. Unique and versatile silicon nanostructures are generated via resist collapse phenomena, which contains dimensions that are well below the diffraction limit of light. We exploit the nanoscale precision ability of confocal laser microscopy in the height dimension; our experimental results demonstrate that the vertical precision of measurement is essential in satisfying the performances required for artifact metrics. Furthermore, by using state-of-the-art nanostructuring technology, we experimentally fabricate clones from the genuine devices. We demonstrate that the statistical properties of the genuine and clone devices are successfully exploited, showing that the liveness-detection-type approach, which is widely deployed in biometrics, is valid in artificially-constructed solid-state nanostructures. These findings pave the way for reasonable and yet sufficiently secure novel principles for information security based on silicon random nanostructures and optical technologies.

  14. Silicon photonic crystal all-optical logic gates

    Fu, Yulan [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Hu, Xiaoyong, E-mail: xiaoyonghu@pku.edu.cn [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Gong, Qihuang, E-mail: qhgong@pku.edu.cn [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China)

    2013-01-03

    All-optical logic gates, including OR, XOR, NOT, XNOR, and NAND gates, are realized theoretically in a two-dimensional silicon photonic crystal using the light beam interference effect. The ingenious photonic crystal waveguide component design, the precisely controlled optical path difference, and the elaborate device configuration ensure the simultaneous realization of five types of logic gate with low-power and a contrast ratio between the logic states of “1” and “0” as high as 20 dB. High power is not necessary for operation of these logic gate devices. This offers a simple and effective approach for the realization of integrated all-optical logic devices.

  15. Silicon photonic dynamic optical channel leveler with external feedback loop.

    Doylend, J K; Jessop, P E; Knights, A P

    2010-06-21

    We demonstrate a dynamic optical channel leveler composed of a variable optical attenuator (VOA) integrated monolithically with a defect-mediated photodiode in a silicon photonic waveguide device. An external feedback loop mimics an analog circuit such that the photodiode directly controls the VOA to provide blind channel leveling within +/-1 dB across a 7-10 dB dynamic range for wavelengths from 1530 nm to 1570 nm. The device consumes approximately 50 mW electrical power and occupies a 6 mm x 0.1 mm footprint per channel. Dynamic leveling is accomplished without tapping optical power from the output path to the photodiode and thus the loss penalty is minimized.

  16. Optical characterisation of sputtered hydrogenated amorphous silicon thin films

    Mellassi, K.; Chafik El Idrissi, M.; Chouiyakh, A.; Rjeb, A.; Barhdadi, A.

    2000-09-01

    The present work is devoted to the study of some optical properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by radio-frequency cathodic sputtering technique. It is essentially focused on investigating separately the effects of increasing partial hydrogen pressure during the deposition stage, and the effects of post deposition thermal annealing on the main optical parameters of the deposited layers (refraction index, optical gap Urbach energy, etc.). We show that low hydrogen pressures allow a saturation of the dangling bonds in the material, while high pressures lead to the creation of new defects. We also show that thermal annealing under moderate temperatures allows a good improvement of the structural quality of deposited films. (author)

  17. Laser-ablated silicon nanoparticles: optical properties and perspectives in optical coherence tomography

    Kirillin, M Yu; Sergeeva, E A; Agrba, P D; Krainov, A D; Ezhov, A A; Shuleiko, D V; Kashkarov, P K; Zabotnov, S V

    2015-01-01

    Due to their biocompatibility silicon nanoparticles have high potential in biomedical applications, especially in optical diagnostics. In this paper we analyze properties of the silicon nanoparticles formed via laser ablation in water and study the possibility of their application as contrasting agents in optical coherence tomography (OCT). The nanoparticles suspension was produced by picosecond laser irradiation of monocrystalline silicon wafers in water. According to transmission electron microcopy analysis the silicon nanoparticles in the obtained suspension vary in size from 2 to 200 nm while concentration of the particles is estimated as 10 13 cm −3 . The optical properties of the suspension in the range from 400 to 1000 nm were studied by spectrophotometry measurements revealing a scattering coefficient of about 0.1 mm −1 and a scattering anisotropy factor in the range of 0.2–0.4. In OCT study a system with a central wavelength of 910 nm was employed. Potential of the silicon nanoparticles as a contrasting agent for OCT is studied in experiments with agarose gel phantoms. Topical application of the nanoparticles suspension allowed the obtaining of the contrast of structural features of phantom up to 14 dB in the OCT image. (paper)

  18. Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film

    Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

    2015-01-01

    Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices’ applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H 2 O 2 /HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing. (paper)

  19. Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film.

    Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

    2015-04-17

    Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices' applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H2O2/HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing.

  20. Morphological and optical properties of silicon thin films by PLD

    Ayouchi, R.; Schwarz, R.; Melo, L.V.; Ramalho, R.; Alves, E.; Marques, C.P.; Santos, L.; Almeida, R.; Conde, O.

    2009-01-01

    Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10 -6 mbar in the temperature range from 400 to 800 deg. C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J x cm -2 has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated. Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature

  1. Linear electro-optic effect in cubic silicon carbide

    Tang, Xiao; Irvine, Kenneth G.; Zhang, Dongping; Spencer, Michael G.

    1991-01-01

    The first observation is reported of the electrooptic effect of cubic silicon carbide (beta-SiC) grown by a low-pressure chemical vapor deposition reactor using the hydrogen, silane, and propane gas system. At a wavelength of 633 nm, the value of the electrooptic coefficient r41 in beta-SiC is determined to be 2.7 +/- 0.5 x 10 (exp-12) m/V, which is 1.7 times larger than that in gallium arsenide measured at 10.6 microns. Also, a half-wave voltage of 6.4 kV for beta-SiC is obtained. Because of this favorable value of electrooptic coefficient, it is believed that silicon carbide may be a promising candidate in electrooptic applications for high optical intensity in the visible region.

  2. Silicon carbide optics for space and ground based astronomical telescopes

    Robichaud, Joseph; Sampath, Deepak; Wainer, Chris; Schwartz, Jay; Peton, Craig; Mix, Steve; Heller, Court

    2012-09-01

    Silicon Carbide (SiC) optical materials are being applied widely for both space based and ground based optical telescopes. The material provides a superior weight to stiffness ratio, which is an important metric for the design and fabrication of lightweight space telescopes. The material also has superior thermal properties with a low coefficient of thermal expansion, and a high thermal conductivity. The thermal properties advantages are important for both space based and ground based systems, which typically need to operate under stressing thermal conditions. The paper will review L-3 Integrated Optical Systems - SSG’s (L-3 SSG) work in developing SiC optics and SiC optical systems for astronomical observing systems. L-3 SSG has been fielding SiC optical components and systems for over 25 years. Space systems described will emphasize the recently launched Long Range Reconnaissance Imager (LORRI) developed for JHU-APL and NASA-GSFC. Review of ground based applications of SiC will include supporting L-3 IOS-Brashear’s current contract to provide the 0.65 meter diameter, aspheric SiC secondary mirror for the Advanced Technology Solar Telescope (ATST).

  3. Iridium-coated micropore x-ray optics using dry etching of a silicon wafer and atomic layer deposition.

    Ogawa, Tomohiro; Ezoe, Yuichiro; Moriyama, Teppei; Mitsuishi, Ikuyuki; Kakiuchi, Takuya; Ohashi, Takaya; Mitsuda, Kazuhisa; Putkonen, Matti

    2013-08-20

    To enhance x-ray reflectivity of silicon micropore optics using dry etching of silicon (111) wafers, iridium coating is tested by use of atomic layer deposition. An iridium layer is successfully formed on sidewalls of tiny micropores with a pore width of 20 μm and depth of 300 μm. The film thickness is ∼20  nm. An enhanced x-ray reflectivity compared to that of silicon is confirmed at Ti Kα 4.51 keV, for what we believe to be the first time, with this type of optics. Some discrepancies from a theoretical reflectivity curve of iridium-coated silicon are noticed at small incident angles <1.3°. When a geometrical shadowing effect due to occultation by a ridge existing on the sidewalls is taken into account, the observed reflectivity becomes well represented by the modified theoretical curve. An estimated surface micro roughness of ∼1  nm rms is consistent with atomic force microscope measurements of the sidewalls.

  4. Full Field X-Ray Fluorescence Imaging Using Micro Pore Optics for Planetary Surface Exploration

    Sarrazin, P.; Blake, D. F.; Gailhanou, M.; Walter, P.; Schyns, E.; Marchis, F.; Thompson, K.; Bristow, T.

    2016-01-01

    Many planetary surface processes leave evidence as small features in the sub-millimetre scale. Current planetary X-ray fluorescence spectrometers lack the spatial resolution to analyse such small features as they only provide global analyses of areas greater than 100 mm(exp 2). A micro-XRF spectrometer will be deployed on the NASA Mars 2020 rover to analyse spots as small as 120m. When using its line-scanning capacity combined to perpendicular scanning by the rover arm, elemental maps can be generated. We present a new instrument that provides full-field XRF imaging, alleviating the need for precise positioning and scanning mechanisms. The Mapping X-ray Fluorescence Spectrometer - "Map-X" - will allow elemental imaging with approximately 100µm spatial resolution and simultaneously provide elemental chemistry at the scale where many relict physical, chemical and biological features can be imaged in ancient rocks. The arm-mounted Map-X instrument is placed directly on the surface of an object and held in a fixed position during measurements. A 25x25 mm(exp 2) surface area is uniformly illuminated with X-rays or alpha-particles and gamma-rays. A novel Micro Pore Optic focusses a fraction of the emitted X-ray fluorescence onto a CCD operated at a few frames per second. On board processing allows measuring the energy and coordinates of each X-ray photon collected. Large sets of frames are reduced into 2d histograms used to compute higher level data products such as elemental maps and XRF spectra from selected regions of interest. XRF spectra are processed on the ground to further determine quantitative elemental compositions. The instrument development will be presented with an emphasis on the characterization and modelling of the X-ray focussing Micro Pore Optic. An outlook on possible alternative XRF imaging applications will be discussed.

  5. Compact silicon photonic resonance-sssisted variable optical attenuator.

    Wang, Xiaoxi; Aguinaldo, Ryan; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

    2016-11-28

    A two-part silicon photonic variable optical attenuator is demonstrated in a compact footprint which can provide a high extinction ratio at wavelengths between 1520 nm and 1620 nm. The device was made by following the conventional p-i-n waveguide section by a high-extinction-ratio second-order microring filter section. The rings provide additional on-off contrast by utilizing a thermal resonance shift, which harvested the heat dissipated by current injection in the p-i-n junction. We derive and discuss a simple thermal-resistance model in explanation of these effects.

  6. Pore space quantification of carbonate rocks before-after supercritical CO2 interaction by optical image analysis

    Berrezueta, Edgar; José Domínguez-Cuesta, María

    2017-04-01

    The aim of this research is to show an experimental application of an automated quantification process of optical porosity in thin sections. Petrographic studies using scanning electronic microscopy, optical microscopy (OpM) and optical image analysis (OIA) could provide a reproducible pore characterization of carbonate rocks in applications related to the geological storage of CO2. This research is focused on i) the quantification of optical pores in a carbonate rock before and after supercritical CO2-rich brine (P ≈ 7.5 MPa and T ≈ 35 °C) and ii) the description of the process followed to guarantee the reproducibility of the OIA method on images acquired with high-resolution scanner. Mineral images were acquired from thin sections using a high-resolution scanner (HRS). Digital images were geo-referenced by using geographic information system to ensure correct spatial correlation and superposition. The optical measures of porosity by image analysis on the carbonates thin sections showed an effective pore segmentation considering different cross-polarized light conditions (90°/0°; 120°/30°) and plane-polarized light conditions (90°/-) of the same petrographic scene. The pore characterization by OpM and OIA-HRS has allowed a preliminary approximation of pore evolution in carbonate rocks under the supercritical CO2-rich brine. This study shows a fast, effective and reproducible methodology that allowed a preliminary characterization (changes in the pore network) of the samples studied. The procedure carried out could be applied to similar experimental injection tests.

  7. Towards Optical Partial Discharge Detection with Micro Silicon Photomultipliers

    Ming Ren

    2017-11-01

    Full Text Available Optical detection is reliable in intrinsically characterizing partial discharges (PDs. Because of the great volume and high-level power supply of the optical devices that can satisfy the requirements in photosensitivity, optical PD detection can merely be used in laboratory studies. To promote the practical application of the optical approach in an actual power apparatus, a silicon photomultiplier (SiPM-based PD sensor is introduced in this paper, and its basic properties, which include the sensitivity, pulse resolution, correlation with PD severity, and electromagnetic (EM interference immunity, are experimentally evaluated. The stochastic phase-resolved PD pattern (PRPD for three typical insulation defects are obtained by SiPM PD detector and are compared with those obtained using a high-frequency current transformer (HFCT and a vacuum photomultiplier tube (PMT. Because of its good performances in the above aspects and its additional advantages, such as the small size, low power supply, and low cost, SiPM offers great potential in practical optical PD monitoring.

  8. Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

    Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

    2015-01-01

    Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics

  9. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes, Phase II

    National Aeronautics and Space Administration — Optical Physics Company (OPC) has developed new silicon carbide (SiC) foam-based optics with hybrid skins that are composite, athermal and lightweight (FOCAL) that...

  10. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes, Phase I

    National Aeronautics and Space Administration — Optical Physics Company (OPC) proposes to manufacture new silicon carbide (SiC) foam-based optics that are composite, athermal and lightweight (FOCAL) that provide...

  11. A silicon-nanowire memory driven by optical gradient force induced bistability

    Dong, B. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); Cai, H., E-mail: caih@ime.a-star.edu.sg; Gu, Y. D.; Kwong, D. L. [Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); Chin, L. K.; Ng, G. I.; Ser, W. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Huang, J. G. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); School of Mechanical Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Yang, Z. C. [School of Electronics Engineering and Computer Science, Peking University, Beijing 100871 (China); Liu, A. Q., E-mail: eaqliu@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); School of Electronics Engineering and Computer Science, Peking University, Beijing 100871 (China)

    2015-12-28

    In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

  12. Optical properties of uniformly sized silicon nanocrystals within a single silicon oxide layer

    En Naciri, A., E-mail: aotmane.en-naciri@univ-lorraine.fr [Universite de Lorraine, LCP-A2MC, Institut Jean Barriol (France); Miska, P. [Universite de Lorraine, Institut Jean Lamour CNRS UMR 7198 (France); Keita, A.-S. [Max Planck Institute for Intelligent Systems (Germany); Battie, Y. [Universite de Lorraine, LCP-A2MC, Institut Jean Barriol (France); Rinnert, H.; Vergnat, M. [Universite de Lorraine, Institut Jean Lamour CNRS UMR 7198 (France)

    2013-04-15

    Silicon nanocrystals (Si-NC) with different sizes (2-6 nm) are synthesized by evaporation. The system is composed of a single Si-NC layer that is well controlled in size. The numerical modeling of such system, without a large size distribution, is suitable to perform easily the optical calculations. The nanocrystal size and confinement effects on the optical properties are determined by photoluminescence (PL) measurements, absorption in the UV visible range, and spectroscopic ellipsometry (SE). The optical constants and the bandgap energies are then extracted and analyzed. The dependence of the optical responses with the decrease of the size of the Si-NC occurs not only with a drastic reduction of the amplitudes of dielectric function but also by a significant expansion of the optical gap. This study supports the idea of a presence of a critical size of Si-NC for which the confinement effect becomes weak. The evolution of those bandgap energies are discussed in comparison with values reported in literature.

  13. Linear Optical Response of Silicon Nanotubes Under Axial Magnetic Field

    Chegel, Raad; Behzad, Somayeh

    2013-01-01

    We investigated the optical properties of silicon nanotubes (SiNTs) in the low energy region, E < 0.5 eV, and middle energy region, 1.8 eV < E < 2 eV. The dependence of optical matrix elements and linear susceptibility on radius and magnetic field, in terms of one-dimensional (1-d) wavevector and subband index, is calculated using the tight-binding approximation. It is found that, on increasing the nanotube diameter, the low-energy peaks show red-shift and their intensities are decreased. Also, we found that in the middle energy region all tubes have two distinct peaks, where the energy position of the second peak is approximately constant and independent of the nanotube diameter. Comparing the band structure of these tubes in different magnetic fields, several differences are clearly seen, such as splitting of degenerate bands, creation of additional band-edge states, and bandgap modification. It is found that applying the magnetic field leads to a phase transition in zigzag silicon hexagonal nanotubes (Si h-NTs), unlike in zigzag silicon gear-like nanotubes (Si g-NTs), which remain semiconducting in any magnetic field. We found that the axial magnetic field has two effects on the linear susceptibility spectrum, namely broadening and splitting. The axial magnetic field leads to the creation of a peak with energy less than 0.2 eV in metallic Si h-NTs, whereas in the absence of a magnetic field such a transition is not allowed.

  14. Optical characteristics of silicon nanowires grown from tin catalyst layers on silicon coated glass

    Ball, Jeremy

    2012-08-20

    The optical characteristics of silicon nanowires grown on Si layers on glass have been modeled using the FDTD (Finite Difference Time Domain) technique and compared with experimental results. The wires were grown by the VLS (vapour-liquid-solid) method using Sn catalyst layers and exhibit a conical shape. The resulting measured and modeled absorption, reflectance and transmittance spectra have been investigated as a function of the thickness of the underlying Si layer and the initial catalyst layer, the latter having a strong influence on wire density. High levels of absorption (>90% in the visible wavelength range) and good agreement between the modeling and experiment have been observed when the nanowires have a relatively high density of ∼4 wires/μ m2. The experimental and modeled results diverge for samples with a lower density of wire growth. The results are discussed along with some implications for solar cell fabrication. © 2012 Optical Society of America.

  15. Optical characteristics of silicon nanowires grown from tin catalyst layers on silicon coated glass

    Ball, Jeremy; Centeno, Anthony; Mendis, Budhika G.; Reehal, H. S.; Alford, Neil

    2012-01-01

    The optical characteristics of silicon nanowires grown on Si layers on glass have been modeled using the FDTD (Finite Difference Time Domain) technique and compared with experimental results. The wires were grown by the VLS (vapour-liquid-solid) method using Sn catalyst layers and exhibit a conical shape. The resulting measured and modeled absorption, reflectance and transmittance spectra have been investigated as a function of the thickness of the underlying Si layer and the initial catalyst layer, the latter having a strong influence on wire density. High levels of absorption (>90% in the visible wavelength range) and good agreement between the modeling and experiment have been observed when the nanowires have a relatively high density of ∼4 wires/μ m2. The experimental and modeled results diverge for samples with a lower density of wire growth. The results are discussed along with some implications for solar cell fabrication. © 2012 Optical Society of America.

  16. Thermo-Optic Characterization of Silicon Nitride Resonators for Cryogenic Photonic Circuits

    Elshaari, A.W.A.; Esmaeil Zadeh, I.; Jöns, K.D.; Zwiller, Val

    2016-01-01

    In this paper, we characterize the Thermo-optic properties of silicon nitride ring resonators between 18 and 300 K. The Thermo-optic coefficients of the silicon nitride core and the oxide cladding are measured by studying the temperature dependence of the resonance wavelengths. The resonant modes

  17. A Photostable Silicon Rhodamine Platform for Optical Voltage Sensing

    Huang, Yi-Lin; Walker, Alison S.; Miller, Evan W.

    2015-01-01

    This paper describes the design and synthesis of a photostable, far-red to near-infrared (NIR) platform for optical voltage sensing. We developed a new, sulfonated silicon rhodamine fluorophore and integrated it with a phenylenevinylene molecular wire to create a Berkeley Red Sensor of Transmembrane potential, or BeRST 1 (“burst”). BeRST 1 is the first member of a class of farred to NIR voltage sensitive dyes that make use of a photoinduced electron transfer (PeT) trigger for optical interrogation of membrane voltage. We show that BeRST 1 displays bright, membrane-localized fluorescence in living cells, high photostability, and excellent voltage sensitivity in neurons. Depolarization of the plasma membrane results in rapid fluorescence increases (24% ΔF/F per 100 mV). BeRST 1 can be used in conjunction with fluorescent stains for organelles, Ca2+ indicators, and voltage-sensitive fluorescent proteins. In addition, the red-shifted spectral profile of BeRST 1, relative to commonly employed optogenetic actuators like ChannelRhodopsin2 (ChR2), which require blue light, enables optical electrophysiology in neurons. The high speed, sensitivity, photostability and long-wavelength fluorescence profiles of BeRST 1 make it a useful platform for the non-invasive, optical dissection of neuronal activity. PMID:26237573

  18. On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

    Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

    2018-04-01

    The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

  19. Optical study of the ultrasonic formation process of noble metal nanoparticles dispersed inside the pores of monolithic mesoporous silica

    Fu Gan Hua; Kan Cai Xia; Li Cun Cheng; Fang Qi

    2003-01-01

    Gold nanoparticles dispersed inside the pores of monolithic mesoporous silica were prepared by soaking the silica in a gold (III) ion solution and subsequent ultrasound irradiation. The formation process of gold nanoparticles in the pores of mesoporous silica was investigated based on optical measurements of wrapped and naked soaked silica after ultrasonic irradiation, and the reduction rate effect in solution and pre-soaking effect. It has been shown that acoustic cavitation cannot occur in nano-sized pores. The gold nanoparticles in silica are not formed in situ within the pores but produced mainly by diffusion of the gold clusters formed in the solution during irradiation into the pores. The radicals formed in solution are exhausted before entering the pores of silica. There exists a critical reduction rate in solution, at which the yield of gold nanoparticles in silica reaches a maximum, and above which there is a decrease in the yield. This is attributed to too quick a growth or aggregation of gold clust...

  20. Optical nonlinearity enhancement with graphene-decorated silicon waveguides

    Ishizawa, Atsushi; Kou, Rai; Goto, Takahiro; Tsuchizawa, Tai; Matsuda, Nobuyuki; Hitachi, Kenichi; Nishikawa, Tadashi; Yamada, Koji; Sogawa, Tetsuomi; Gotoh, Hideki

    2017-04-01

    Broadband on-chip optical frequency combs (OFCs) are important for expanding the functionality of photonic integrated circuits. Here, we demonstrate a huge local optical nonlinearity enhancement using graphene. A waveguide is decorated with graphene by precisely manipulating graphene’s area and position. Our approach simultaneously achieves both an extremely efficient supercontinuum and ultra-short pulse generation. With our graphene-decorated silicon waveguide (G-SWG), we have achieved enhanced spectral broadening of femtosecond pump pulses, along with an eightfold increase in the output optical intensity at a wavelength approximately 200 nm shorter than that of the pump pulses. We also found that this huge nonlinearity works as a compressor that effectively compresses pulse width from 80 to 15.7 fs. Our results clearly show the potential for our G-SWG to greatly boost the speed and capacity of future communications with lower power consumption, and our method will further decrease the required pump laser power because it can be applied to decorate various kinds of waveguides with various two-dimensional materials.

  1. Optical characterization of RTV615 silicone rubber compound

    Li, W; Huber, G M

    2014-01-01

    Room Temperature Vulcanized (RTV) silicone compounds are commonly used to bond optical components. For our application, we needed to identify an adhesive with good ultraviolet transmission characteristics, to couple photomultipliers to quartz windows in a Heavy Gas Čerenkov detector that is being constructed for Experimental Hall C of Jefferson Lab to provide π/K separation up to 11 GeV/c. To this end, we present the light transmission results for Momentive RTV615 silicone rubber compound for wavelengths between 195-400 nm, obtained with an adapted reflectivity apparatus at Jefferson Lab. All samples cured at room temperature have transmissions ∼ 93% for wavelengths between 360-400 nm and fall sharply below 230 nm. Wavelength dependent absorption coefficients were extracted with four samples of different thicknesses cured at normal temperature (25° C for 7 days). The absorption coefficient drops approximately two orders in magnitude from 220-400 nm, exhibiting distinct regions of flattening near 250 nm and 330 nm. We also investigated the effect of a high temperature curing method (100° C for 1 hour) and found 5-10% better transmission than with the normal method. The effect was more significant with larger sample thickness (3.35 mm) over the wavelength range of 220-280 nm

  2. Optical nonreciprocal transmission in an asymmetric silicon photonic crystal structure

    Wu, Zheng; Chen, Juguang; Ji, Mengxi; Huang, Qingzhong; Xia, Jinsong; Wang, Yi, E-mail: yingwu2@126.com, E-mail: ywangwnlo@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Wu, Ying, E-mail: yingwu2@126.com, E-mail: ywangwnlo@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

    2015-11-30

    An optical nonreciprocal transmission (ONT) is realized by employing the nonlinear effects in a compact asymmetric direct-coupled nanocavity-waveguide silicon photonic crystal structure with a high loaded quality factor (Q{sub L}) of 42 360 and large extinction ratio exceeding 30 dB. Applying a single step lithography and successive etching, the device can realize the ONT in an individual nanocavity, alleviating the requirement to accurately control the resonance of the cavities. A maximum nonreciprocal transmission ratio of 21.1 dB as well as a working bandwidth of 280 pm in the telecommunication band are obtained at a low input power of 76.7 μW. The calculated results by employing a nonlinear coupled-mode model are in good agreement with the experiment.

  3. A porous silicon optical microcavity for sensitive bacteria detection

    Li Sha; Huang Jianfeng; Cai Lintao

    2011-01-01

    A porous silicon microcavity (PSM) is highly sensitive to subtle interface changes due to its high surface area, capillary condensation ability and a narrow resonance peak (∼10 nm). Based on the well-defined optical properties of a PSM, we successfully fabricated a bacteria detection chip for molecular or subcellular analysis by surface modification using undecylenic acid (UA), and the specific recognition binding of vancomycin to the D-alanyl-D-alanine of bacteria. The red shift of the PSM resonance peak showed a good linear relationship with bacteria concentration ranging from 100 to 1000 bacteria ml -1 at the level of relative standard deviation of 0.994 and detection limit of 20 bacteria ml -1 . The resulting PSM sensors demonstrated high sensitivity, good reproducibility, fast response and low cost for biosensing.

  4. A porous silicon optical microcavity for sensitive bacteria detection

    Li, Sha; Huang, Jianfeng; Cai, Lintao

    2011-10-01

    A porous silicon microcavity (PSM) is highly sensitive to subtle interface changes due to its high surface area, capillary condensation ability and a narrow resonance peak (~10 nm). Based on the well-defined optical properties of a PSM, we successfully fabricated a bacteria detection chip for molecular or subcellular analysis by surface modification using undecylenic acid (UA), and the specific recognition binding of vancomycin to the D-alanyl-D-alanine of bacteria. The red shift of the PSM resonance peak showed a good linear relationship with bacteria concentration ranging from 100 to 1000 bacteria ml - 1 at the level of relative standard deviation of 0.994 and detection limit of 20 bacteria ml - 1. The resulting PSM sensors demonstrated high sensitivity, good reproducibility, fast response and low cost for biosensing.

  5. A porous silicon optical microcavity for sensitive bacteria detection

    Li Sha; Huang Jianfeng; Cai Lintao, E-mail: lt.cai@siat.ac.cn [CAS Key Lab of Health Informatics, Shenzhen Key Laboratory of Cancer Nanotechnology, Institute of Biomedical and Health Engineering, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055 (China)

    2011-10-21

    A porous silicon microcavity (PSM) is highly sensitive to subtle interface changes due to its high surface area, capillary condensation ability and a narrow resonance peak ({approx}10 nm). Based on the well-defined optical properties of a PSM, we successfully fabricated a bacteria detection chip for molecular or subcellular analysis by surface modification using undecylenic acid (UA), and the specific recognition binding of vancomycin to the D-alanyl-D-alanine of bacteria. The red shift of the PSM resonance peak showed a good linear relationship with bacteria concentration ranging from 100 to 1000 bacteria ml{sup -1} at the level of relative standard deviation of 0.994 and detection limit of 20 bacteria ml{sup -1}. The resulting PSM sensors demonstrated high sensitivity, good reproducibility, fast response and low cost for biosensing.

  6. Optical modelling of thin-film silicon solar cells deposited on textured substrates

    Krc, J.; Zeman, M.; Smole, F.; Topic, M.

    2004-01-01

    Optical modelling is used to investigate effects of light scattering in amorphous silicon and microcrystalline silicon solar cells. The role of enhanced haze parameter and different angular distribution function of scattered light is analyzed. Results of optical simulation show that enhanced haze parameter compared to that of Asahi U-type SnO 2 :F does not improve external quantum efficiency and short-circuit current density of amorphous silicon solar cell significantly, whereas for microcrystalline silicon solar cell the improvement is larger. Angular distribution function affects the external quantum efficiency and the short-circuit current density significantly

  7. All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide

    D. Simin

    2016-07-01

    Full Text Available We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-^{28}SiC and reveal not yet considered terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which would be otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity better than 100  nT/sqrt[Hz] within a volume of 3×10^{-7}mm^{3} at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radio-frequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3  mm^{3}, the projection noise limit is below 100  fT/sqrt[Hz].

  8. Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

    Galkin, N.G.; Galkin, K.N.; Dotsenko, S.A.; Goroshko, D.L.; Shevlyagin, A.V.; Chusovitin, E.A.; Chernev, I.M.

    2017-01-01

    By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.1-2.6 eV is observed. An optimization of growth processes permit to grow monolithic double nanoheterostructures (DNHS) with embedded Fe, Cr and Ca nanocrystals, and also polycrystalline DNHS with NC of Mg silicide and Mg stannide and Ca disilicide. By methods of optical spectroscopy and Raman spectroscopy it was shown that embedded NC form intensive peaks in the reflectance spectra at energies up to 2.5 eV and Raman peaks. In DNS with β-FeSi2 NC a photoluminescence and electroluminescence at room temperature were firstly observed.

  9. Optical characterization of luminescent silicon nanocrystals embedded in glass matrices

    Debieu, Olivier

    2008-12-16

    Interstellar dust in nebulae and in the Diffuse Interstellar Medium (DISM) of galaxies contains a component which exhibits efficient visible-near infrared luminescence ranging from 500 to 1000 nm, known as Extended Red Emission (ERE). Silicon nanocrystals (nc-Si) are discussed as possible carriers of the ERE. We employed the accelerator facilities of the Institute of Solid State Physics of the University of Jena to implant Si ions into fused silica windows. An excess concentration of silicon atoms is thus produced in the host SiO{sub 2} matrix which, by applying an annealing at 1100 C, condensates to silicon nanoparticles and crystallizes. Although the condensation and crystallization occur after an annealing of one minute,10, 15 the samples were annealed during one hour in order to well-passivate the nc-Si, that means, to reduce effectively the number of Si-dangling bonds at the nc-Si surface that are efficient non-radiative recombination centers. 10, 16 Upon excitation with UV light, most of our nc-Si/SiO{sub 2} samples revealed strong PL. We implanted into our luminescent nc-Si/SiO{sub 2} systems other atomic elements, as for instance magnesium and calcium, which form silicates if their oxide is combined with SiO{sub 2}. The purpose is to simulate the conditions for silicates containing nc-Si. In order to understand the effect of the incorporation of foreign atoms on the PL properties of our nc-Si/SiO{sub 2} systems, we proceeded to similar experiments with Er and Ge. As has been demonstrated by several authors, 17, 18 the presence of nc-Si in a glass matrix enhances considerably the emission of Er{sup 3+} ions at 1.536{mu}m. At the same time, the PL of nc-Si is considerably quenched. Since the solubility of Er in crystalline silicon is about 2 orders of magnitude lower than in SiO{sub 2}, the optically active Er{sup 3+} ions are believed to be localized outside the nc-Si core, demonstrating that ions present in the host SiO{sub 2} matrix influence the PL

  10. Quantum Dot Laser for a Light Source of an Athermal Silicon Optical Interposer

    Nobuaki Hatori

    2015-04-01

    Full Text Available This paper reports a hybrid integrated light source fabricated on a silicon platform using a 1.3 μm wavelength quantum dot array laser. Temperature insensitive characteristics up to 120 °C were achieved by the optimum quantum dot structure and laser structure. Light output power was obtained that was high enough to achieve an optical error-free link of a silicon optical interposer. Furthermore, we investigated a novel spot size convertor in a silicon waveguide suitable for a quantum dot laser for lower energy cost operation of the optical interposer.

  11. Optical and microstructural characterization of porous silicon using photoluminescence, SEM and positron annihilation spectroscopy

    Cheung, C K; Nahid, F; Cheng, C C; Beling, C D; Fung, S; Ling, C C; Djurisic, A B; Pramanik, C; Saha, H; Sarkar, C K

    2007-01-01

    We have studied the dependence of porous silicon morphology and porosity on fabrication conditions. N-type (100) silicon wafers with resistivity of 2-5 Ω cm were electrochemically etched at various current densities and anodization times. Surface morphology and the thickness of the samples were examined by scanning electron microscopy (SEM). Detailed information of the porous silicon layer morphology with variation of preparation conditions was obtained by positron annihilation spectroscopy (PAS): the depth-defect profile and open pore interconnectivity on the sample surface has been studied using a slow positron beam. Coincidence Doppler broadening spectroscopy (CDBS) was used to study the chemical environment of the samples. The presence of silicon micropores with diameter varying from 1.37 to 1.51 nm was determined by positron lifetime spectroscopy (PALS). Visible luminescence from the samples was observed, which is considered to be a combination effect of quantum confinement and the effect of Si = O double bond formation near the SiO 2 /Si interface according to the results from photoluminescence (PL) and positron annihilation spectroscopy measurements. The work shows that the study of the positronium formed when a positron is implanted into the porous surface provides valuable information on the pore distribution and open pore interconnectivity, which suggests that positron annihilation spectroscopy is a useful tool in the porous silicon micropores' characterization

  12. Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

    Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

    2015-11-13

    The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

  13. Silica-on-silicon optical couplers and coupler based optical filters

    Leick, Lasse

    2002-01-01

    is not an adequate description of the waveguides. A simple application for an optical couplers is as a 980/1550 nm mulitmplexer for erbium doped wavguide amplifiers. A numerical analysis shows that a directional coupler has acceptable specifications, whereas a mulit mode interference coupler does not. The wavelength......This work concerns modeling and chracterization of non ampligying silica-on-silicon optical components for wavelength division mulitplexed networks. Emphasis is placed on optical couplers and how they can be used as building blocks for devices with a larger complexity. It has been investigated how...... to construct wavelength flattened and process tolerant couplers. A thorough comparison between directional couplers, multi mode interference couplers and interferometer-based couplers has been performed. Numerically all these architectures have the ability to obtain similar wavelength-flatness, but the multi...

  14. Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

    Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao, E-mail: yxzheng@fudan.edu.c [Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)

    2010-11-10

    A series of SiO{sub 2} films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO{sub 2} films thicker than 60 nm are close to those of bulk SiO{sub 2}. For the thin films deposited at the rate of {approx}1.0 nm s{sup -1}, the refractive indices increase with decreasing thickness from {approx}60 to {approx}10 nm and then drop sharply with decreasing thickness below {approx}10 nm. However, for thin films deposited at the rates of {approx}0.4 and {approx}0.2 nm s{sup -1}, the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

  15. Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

    Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao

    2010-01-01

    A series of SiO 2 films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO 2 films thicker than 60 nm are close to those of bulk SiO 2 . For the thin films deposited at the rate of ∼1.0 nm s -1 , the refractive indices increase with decreasing thickness from ∼60 to ∼10 nm and then drop sharply with decreasing thickness below ∼10 nm. However, for thin films deposited at the rates of ∼0.4 and ∼0.2 nm s -1 , the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

  16. Nonlinear Optical Functions in Crystalline and Amorphous Silicon-on-Insulator Nanowires

    Baets, R.; Kuyken, B.; Liu, X.

    2012-01-01

    Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 µm....

  17. Linear all-optical signal processing using silicon micro-ring resonators

    Ding, Yunhong; Ou, Haiyan; Xu, Jing

    2016-01-01

    Silicon micro-ring resonators (MRRs) are compact and versatile devices whose periodic frequency response can be exploited for a wide range of applications. In this paper, we review our recent work on linear all-optical signal processing applications using silicon MRRs as passive filters. We focus...

  18. Extreme electronic bandgap modification in laser-crystallized silicon optical fibres

    Healy, N.; Mailis, S.; Bulgakova, Nadezhda M.; Sazio, P.J.A.; Day, T.D.; Sparks, J.R.; Cheng, H.Y.; Badding, J.V.; Peacock, A.C.

    2014-01-01

    Roč. 13, č. 12 (2014), s. 1122-1127 ISSN 1476-1122 Institutional support: RVO:68378271 Keywords : strained silicon * modulation * generation Subject RIV: BH - Optics, Masers, Lasers Impact factor: 36.503, year: 2014

  19. Guided Acoustic and Optical Waves in Silicon-on-Insulator for Brillouin Scattering and Optomechanics

    2016-08-01

    APL PHOTONICS 1, 071301 (2016) Guided acoustic and optical waves in silicon-on- insulator for Brillouin scattering and optomechanics Christopher J...is possible to simultaneously guide optical and acoustic waves in the technologically important silicon on insulator (SOI) material system. Thin...high sound velocity — makes guiding acoustic waves difficult, motivating the use of soft chalcogenide glasses and partial or complete releases (removal

  20. Magnetic Field Effect on Ultrashort Two-dimensional Optical Pulse Propagation in Silicon Nanotubes

    Konobeeva, N. N.; Evdokimov, R. A.; Belonenko, M. B.

    2018-05-01

    The paper deals with the magnetic field effect which provides a stable propagation of ultrashort pulses in silicon nanotubes from the viewpoint of their waveform. The equation is derived for the electromagnetic field observed in silicon nanotubes with a glance to the magnetic field for two-dimensional optical pulses. The analysis is given to the dependence between the waveform of ultrashort optical pulses and the magnetic flux passing through the cross-sectional area of the nanotube.

  1. 160 Gbit/s optical packet switching using a silicon chip

    Hu, Hao; Ji, Hua; Galili, Michael

    2012-01-01

    We have successfully demonstrated 160 Gbit/s all-optical packet switching based on cross-phase modulation using a silicon chip. Error free performance is achieved for the 4-to-1 switched 160 Gbit/s packet.......We have successfully demonstrated 160 Gbit/s all-optical packet switching based on cross-phase modulation using a silicon chip. Error free performance is achieved for the 4-to-1 switched 160 Gbit/s packet....

  2. Influence of Pore Size on the Optical and Electrical Properties of Screen Printed TiO2 Thin Films

    Dinfa Luka Domtau

    2016-01-01

    Full Text Available Influence of pore size on the optical and electrical properties of TiO2 thin films was studied. TiO2 thin films with different weight percentages (wt% of carbon black were deposited by screen printing method on fluorine doped tin oxide (FTO coated on glass substrate. Carbon black decomposed on annealing and artificial pores were created in the films. All the films were 3.2 µm thick as measured by a surface profiler. UV-VIS-NIR spectrophotometer was used to study transmittance and reflectance spectra of the films in the photon wavelength of 300–900 nm while absorbance was studied in the range of 350–900 nm. Band gaps and refractive index of the films were studied using the spectra. Reflectance, absorbance, and refractive index were found to increase with concentrations of carbon black. There was no significant variation in band gaps of films with change in carbon black concentrations. Transmittance reduced as the concentration of carbon black in TiO2 increased (i.e., increase in pore size. Currents and voltages (I-V characteristics of the films were measured by a 4-point probe. Resistivity (ρ and conductivity (σ of the films were computed from the I-V values. It was observed that resistivity increased with carbon black concentrations while conductivity decreased as the pore size of the films increased.

  3. Four-port mode-selective silicon optical router for on-chip optical interconnect.

    Jia, Hao; Zhou, Ting; Fu, Xin; Ding, Jianfeng; Zhang, Lei; Yang, Lin

    2018-04-16

    We propose and demonstrate a four-port mode-selective optical router on a silicon-on-insulator platform. The passive routing property ensures that the router consumes no power to establish the optical links. For each port, input signals with different modes are selectively routed to the target ports through the pre-designed architecture. In general, the device intrinsically supports broadcasting of multiplexed signals from one port to the other three ports through mode division multiplexing. In some applications, the input signal from one port would only be sent to another port as in reconfigurable optical routers. The prototype is constructed by mode multiplexers/de-multiplexers and single-mode interconnect waveguides between them. The insertion losses for all optical links are lower than 8.0 dB, and the largest optical crosstalk values are lower than -18.7 dB and -22.0 dB for the broadcasting and port-to-port routing modes, respectively, at the wavelength range of 1525-1565 nm. In order to verify the routing functionality, a 40-Gbps bidirectional data transmission experiment is performed. The device offers a promising building block for passive routing by utilizing the dimension of the modes.

  4. An integrated nonlinear optical loop mirror in silicon photonics for all-optical signal processing

    Zifei Wang

    2018-02-01

    Full Text Available The nonlinear optical loop mirror (NOLM has been studied for several decades and has attracted considerable attention for applications in high data rate optical communications and all-optical signal processing. The majority of NOLM research has focused on silica fiber-based implementations. While various fiber designs have been considered to increase the nonlinearity and manage dispersion, several meters to hundreds of meters of fiber are still required. On the other hand, there is increasing interest in developing photonic integrated circuits for realizing signal processing functions. In this paper, we realize the first-ever passive integrated NOLM in silicon photonics and demonstrate its application for all-optical signal processing. In particular, we show wavelength conversion of 10 Gb/s return-to-zero on-off keying (RZ-OOK signals over a wavelength range of 30 nm with error-free operation and a power penalty of less than 2.5 dB, we achieve error-free nonreturn to zero (NRZ-to-RZ modulation format conversion at 10 Gb/s also with a power penalty of less than 2.8 dB, and we obtain error-free all-optical time-division demultiplexing of a 40 Gb/s RZ-OOK data signal into its 10 Gb/s tributary channels with a maximum power penalty of 3.5 dB.

  5. About the optical properties of oxidized black silicon structures

    Pincik, E.; Brunner, R.; Kobayashi, H.; Mikula, M.; Kučera, M.; Švec, P.; Greguš, J.; Vojtek, P.; Zábudlá, Z.; Imamura, K.; Zahoran, M.

    2017-02-01

    The paper deals with the optical and morphological properties of thermally oxidized black silicon (OBSi) nano-crystalline specimens produced by the surface structure chemical transfer method (SSCT). This method can produce a nano-crystalline Si black color layer on c-Si with a range of thickness of ∼50 nm to ∼300 nm by the contact of c-Si immersed in chemical solutions HF + H2O2 with a catalytic mesh. We present and discuss mainly the photoluminescence properties of both polished c-Si and OBSi structures, respectively. The similar photoluminescence (PL) behaviors recorded at liquid helium (6 K) and room temperatures on both polished crystalline Si and OBSi samples, respectively, indicate the similar origin of recorded luminescence light. As the positions of PL maxima of OBSi structures are mainly related to the size of Si nanocrystallites and SiO(x), we therefore suppose that the size of the dominant parts of the luminated OBSi nanostructure is pre-determined by the used polishing Si procedure, and/or the distribution function of the number of formed crystallites on their size is very similar. The blue shift of both PL spectra reaching almost value of 0.40 eV observed after the decrease of the sample temperature to 6 K we relate also with the change of the semiconductor band gap width.

  6. Sulfide Species Optical Monitoring by a Miniaturized Silicon Photomultiplier

    Salvatore Petralia

    2018-02-01

    Full Text Available The monitoring of water-soluble pollutants is receiving a growing interest from the scientific community. In this context, sulfide anion species S2− and HS− are particularly relevant since they can cause acute and chronic toxicity including neurological effects and at high concentrations, even death. In this study, a new strategy for fast and sensitive optical detection of sulfide species in water samples is described. The method uses an integrated silicon photomultiplier (SiPM device coupled with the appropriate analytical strategy applied in a plastic microchip with dried reagents on board. More specifically, all sulfide species (H2S, HS− and S2− in water samples are detected by the fluorescence signal emitted upon the reaction with N,N-dimethyl-phenylenediamine sulfate in the presence of Fe3+, leading to the formation of the fluorescent methylene blue (MB species. It has been proven that the system herein proposed is able to measure sulfide concentration in a linear range from 0–10 mg L−1 with a sensitivity value of about 6.7 µA mg−1 L and a detection limit of 0.5 mg L−1. A comparison with conventional UV-Vis detection method has been also carried out. Data show a very good linear correlation (R2 = 0.98093, proving the effectiveness of the method. Results pave the way toward the development of portable and low-cost device systems for water-soluble sulfide pollutants.

  7. Effect of Current Density on Thermal and Optical Properties of p-Type Porous Silicon

    Kasra Behzad; Wan Mahmood Mat Yunus; Zainal Abidin Talib; Azmi Zakaria; Afarin Bahrami

    2011-01-01

    The different parameters of the porous silicon (PSi) can be tuned by changing some parameters in preparation process. We have chosen the anodization as formation method, so the related parameters should be changed. In this study the porous silicon (PSi) layers were formed on p-type Si wafer. The samples were anodized electrically in a fixed etching time under some different current densities. The structural and optical properties of porous silicon (PSi) on silicon (Si) substrates were investigated using photoluminescence (PL) and Photoacoustic Spectroscopy (PAS). (author)

  8. Fabrication and Characterisation of Silicon Waveguides for High-Speed Optical Signal Processing

    Jensen, Asger Sellerup

    This Ph.D. thesis treats various aspects of silicon photonics. From the limitations of silicon as a linear and nonlinear waveguide medium to its synergy with other waveguide materials. Various methods for reducing sidewall roughness and line edge roughness of silicon waveguides are attempted...... was too high for any practical applications. It is speculated that the attempt at creating a material with low density of dangling bonds was unsuccessful. Nevertheless, linear losses of 2.4dB/cm at 1550nm wavelength in the silicon waveguides remained sufficiently low that high speed nonlinear optical...

  9. Self-organized, effective medium black silicon antireflection structures for silicon optics in the mid-infrared

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    Thanks to its high quality and low cost, silicon is the material of choice for optical devices operating in the mid-infrared (MIR; 2 μm to 6 μm wavelength). Unfortunately in this spectral region, the refractive index is comparably high (about 3.5) and leads to severe reflection losses of about 30% per interface. In this work, we demonstrate that self-organized, statistical Black Silicon structures, fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE), can be used to effectively suppress interface reflection. More importantly, it is shown that antireflection can be achieved in an image-preserving, non-scattering way. This enables Black Silicon antireflection structures (ARS) for imaging applications in the MIR. It is demonstrated that specular transmittances of 97% can be easily achieved on both flat and curved substrates, e.g. lenses. Moreover, by a combined optical and morphological analysis of a multitude of different Black Silicon ARS, an effective medium criterion for the examined structures is derived that can also be used as a design rule for maximizing sample transmittance in a desired wavelength range. In addition, we show that the mechanical durability of the structures can be greatly enhanced by coating with hard dielectric materials like diamond-like carbon (DLC), hence enabling practical applications. Finally, the distinct advantages of statistical Black Silicon ARS over conventional AR layer stacks are discussed: simple applicability to topological substrates, absence of thermal stress and cost-effectiveness.

  10. Mesoporous Bragg reflectors: block-copolymer self-assembly leads to building blocks with well defined continuous pores and high control over optical properties

    Guldin, S.; Kolle, M.; Stefik, M.; Wiesner, U.; Steiner, U.

    2011-01-01

    dened. Following a 30 min annealing protocol after each layer deposition enables the fast and reliable stacking of MDBRs which exhibit a continuous TiO2 network with large accessible pores and high optical quality.

  11. Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

    Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

    2010-01-01

    We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

  12. Methods and systems for Raman and optical cross-interrogation in flow-through silicon membranes

    Bond, Tiziana C.; Letant, Sonia E.

    2014-09-09

    Cross-interrogating photonic detection systems and methods are shown. A flow through photonic crystal membrane with a surface enhanced Raman scattering (SERS) substrate is provided with pores which are distributed along multiple regions. The pores of one region have walls to which a first type of target specific anchor can be attached, while pores of another region have walls to which a second type of target specific anchor can be attached. An optical arrangement out-of-plane to the SERS substrate is also provided for enhanced sensitivity and identification of target organisms.

  13. Gold nanorods-silicone hybrid material films and their optical limiting property

    Li, Chunfang; Qi, Yanhai; Hao, Xiongwen; Peng, Xue; Li, Dongxiang

    2015-10-01

    As a kind of new optical limiting materials, gold nanoparticles have optical limiting property owing to their optical nonlinearities induced by surface plasmon resonance (SPR). Gold nanorods (GNRs) possess transversal SPR absorption and tunable longitudinal SPR absorption in the visible and near-infrared region, so they can be used as potential optical limiting materials against tunable laser pulses. In this letter, GNRs were prepared using seed-mediated growth method and surface-modified by silica coating to obtain good dispersion in polydimethylsiloxane prepolymers. Then the silicone rubber films doped with GNRs were prepared after vulcanization, whose optical limiting property and optical nonlinearity were investigated. The silicone rubber samples doped with more GNRs were found to exhibit better optical limiting performance.

  14. Development and characterization of coatings on Silicon Pore Optics substrates for the ATHENA mission

    Ferreira, Desiree Della Monica; Jakobsen, Anders Clemen; Christensen, Finn Erland

    2012-01-01

    roughness in the coatings. Both processes show promising results. Measurements of the coatings were carried out at the 8 keV X-ray facility at DTU Space and with synchrotron radiation in the laboratory of PTB at BESSY II to determine re ectivity at the grazing incidence angles and energies of ATHENA...

  15. Photonic Torque Microscopy of the Nonconservative Force Field for Optically Trapped Silicon Nanowires

    Irrera, A.; Maggazu, A.; Artoni, P.; Simpson, Stephen Hugh; Hanna, S.; Jones, P.H.; Priolo, F.; Gucciardi, P. G.; Marago, O.M.

    2016-01-01

    Roč. 16, č. 7 (2016), s. 4181-4188 ISSN 1530-6984 R&D Projects: GA ČR GB14-36681G Institutional support: RVO:68081731 Keywords : optical tweezers * silicon nanowires * nonequilibrium dynamics * Brownian motion Subject RIV: BH - Optics, Masers, Lasers Impact factor: 12.712, year: 2016

  16. The effects of thermal annealing in structural and optical properties of RF sputtered amorphous silicon

    Abdul Fatah Awang Mat

    1988-01-01

    The effect of thermal annealing on structural and optical properties of amorphous silicon are studied on samples prepared by radio-frequency sputtering. The fundamental absorption edge of these films are investigated at room temperature and their respective parameters estimated. Annealing effect on optical properties is interpreted in terms of the removal of voids and a decrease of disorder. (author)

  17. Optical switching at 1.55um in silicon racetrack resonators using phase change materials

    Rudé, M.; Pello, J.; Simpson, R.E.; Osmond, J.; Roelkens, G.C.; Tol, van der J.J.G.M.; Pruneri, V.

    2013-01-01

    An optical switch operating at a wavelength of 1.55¿µm and showing a 12 dB modulation depth is introduced. The device is implemented in a silicon racetrack resonator using an overcladding layer of the phase change data storage material Ge2Sb2Te5, which exhibits high contrast in its optical

  18. Silicon-integrated thin-film structure for electro-optic applications

    McKee, Rodney A.; Walker, Frederick Joseph

    2000-01-01

    A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

  19. Optic nerve compression as a late complication of a hydrogel explant with silicone encircling band

    Niels Crama

    2018-06-01

    Full Text Available Purpose: To present a complication of compressive optic neuropathy caused by a swollen hydrogel explant and posteriorly displaced silicone encircling band. Observations: A 72-year-old female patient presented with progressive visual loss and a tilted optic disc. Her medical history included a retinal detachment in 1993 that was treated with a hydrogel explant under a solid silicone encircling band. Visual acuity had decreased from 6/10 to 6/20 and perimetry showed a scotoma in the temporal superior quadrant. On Magnetic Resonance Imaging (MRI, compression of the optic nerve by a displaced silicone encircling band inferior nasally in combination with a swollen episcleral hydrogel explant was observed. Surgical removal of the hydrogel explant and silicone encircling band was uneventful and resulted in improvement of visual acuity and visual field loss. Conclusions and importance: This is the first report on compressive optic neuropathy caused by swelling of a hydrogel explant resulting in a dislocated silicone encircling band. The loss of visual function resolved upon removal of the explant and encircling band. Keywords: Retinal detachment, Tilted disc, Optic neuropathy, Miragel, Explant, Encircling band

  20. Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation

    Alloatti, L.; Lauermann, M.; Koos, C.; Freude, W.; Sürgers, C.; Leuthold, J.

    2013-01-01

    We determine the optical losses in gate-induced charge accumulation/inversion layers at a Si/SiO 2 interface. Comparison between gate-induced charge layers and ion-implanted thin silicon films having an identical sheet resistance shows that optical losses can be significantly lower for gate-induced layers. For a given sheet resistance, holes produce higher optical loss than electrons. Measurements have been performed at λ = 1550 nm

  1. Monolithic Perovskite Silicon Tandem Solar Cells with Advanced Optics

    Goldschmidt, Jan C.; Bett, Alexander J.; Bivour, Martin; Blasi, Benedikt; Eisenlohr, Johannes; Kohlstadt, Markus; Lee, Seunghun; Mastroianni, Simone; Mundt, Laura; Mundus, Markus; Ndione, Paul; Reichel, Christian; Schubert, Martin; Schulze, Patricia S.; Tucher, Nico; Veit, Clemens; Veurman, Welmoed; Wienands, Karl; Winkler, Kristina; Wurfel, Uli; Glunz, Stefan W.; Hermle, Martin

    2016-11-14

    For high efficiency monolithic perovskite silicon tandem solar cells, we develop low-temperature processes for the perovskite top cell, rear-side light trapping, optimized perovskite growth, transparent contacts and adapted characterization methods.

  2. Morphological and optical properties of n-type porous silicon

    type silicon wafer have been reported in the present article. Method of PS fabrication is by photo-assisted electrochemical etching with different etching current densities ( J ). Porosity and PS layer thickness, obtained by the gravimetric method, ...

  3. Silicon photonics integrated circuits: a manufacturing platform for high density, low power optical I/O's.

    Absil, Philippe P; Verheyen, Peter; De Heyn, Peter; Pantouvaki, Marianna; Lepage, Guy; De Coster, Jeroen; Van Campenhout, Joris

    2015-04-06

    Silicon photonics integrated circuits are considered to enable future computing systems with optical input-outputs co-packaged with CMOS chips to circumvent the limitations of electrical interfaces. In this paper we present the recent progress made to enable dense multiplexing by exploiting the integration advantage of silicon photonics integrated circuits. We also discuss the manufacturability of such circuits, a key factor for a wide adoption of this technology.

  4. Micropore x-ray optics using anisotropic wet etching of (110) silicon wafers.

    Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto; Mitsuda, Kazuhisa; Hoshino, Akio; Ishisaki, Yoshitaka; Yang, Zhen; Takano, Takayuki; Maeda, Ryutaro

    2006-12-10

    To develop x-ray mirrors for micropore optics, smooth silicon (111) sidewalls obtained after anisotropic wet etching of a silicon (110) wafer were studied. A sample device with 19 microm wide (111) sidewalls was fabricated using a 220 microm thick silicon (110) wafer and potassium hydroxide solution. For what we believe to be the first time, x-ray reflection on the (111) sidewalls was detected in the angular response measurement. Compared to ray-tracing simulations, the surface roughness of the sidewalls was estimated to be 3-5 nm, which is consistent with the atomic force microscope and the surface profiler measurements.

  5. Micropore x-ray optics using anisotropic wet etching of (110) silicon wafers

    Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto; Mitsuda, Kazuhisa; Hoshino, Akio; Ishisaki, Yoshitaka; Yang Zhen; Takano, Takayuki; Maeda, Ryutaro

    2006-01-01

    To develop x-ray mirrors for micropore optics, smooth silicon (111)sidewalls obtained after anisotropic wet etching of a silicon (110) wafer were studied. A sample device with 19 μm wide (111) sidewalls was fabricated using a 220 μm thick silicon (110) wafer and potassium hydroxide solution. For what we believe to be the first time,x-ray reflection on the (111) sidewalls was detected in the angular response measurement. Compared to ray-tracing simulations, the surface roughness of the sidewalls was estimated to be 3-5 nm, which is consistent with the atomic force microscope and the surface profiler measurements

  6. Zero-field optical magnetic resonance study of phosphorus donors in 28-silicon

    Morse, Kevin J.; Dluhy, Phillip; Huber, Julian; Salvail, Jeff Z.; Saeedi, Kamyar; Riemann, Helge; Abrosimov, Nikolay V.; Becker, Peter; Pohl, Hans-Joachim; Simmons, S.; Thewalt, M. L. W.

    2018-03-01

    Donor spins in silicon are some of the most promising qubits for upcoming solid-state quantum technologies. The nuclear spins of phosphorus donors in enriched silicon have among the longest coherence times of any solid-state system as well as simultaneous high fidelity qubit initialization, manipulation, and readout. Here we characterize the phosphorus in silicon system in the regime of "zero" magnetic field, where a singlet-triplet spin clock transition can be accessed, using laser spectroscopy and magnetic resonance methods. We show the system can be optically hyperpolarized and has ˜10 s Hahn echo coherence times, even for applied static magnetic fields below Earth's field.

  7. Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission

    Fischer, M.; Sperlich, A.; Kraus, H.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

    2018-05-01

    We investigate the pump efficiency of silicon-vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.

  8. Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique

    Sheng, Chan Kok; Mahmood Mat Yunus, W.; Yunus, Wan Md. Zin Wan; Abidin Talib, Zainal; Kassim, Anuar

    2008-01-01

    In this work, the porous silicon layer was prepared by the electrochemical anodization etching process on n-type and p-type silicon wafers. The formation of the porous layer has been identified by photoluminescence and SEM measurements. The optical absorption, energy gap, carrier transport and thermal properties of n-type and p-type porous silicon layers were investigated by analyzing the experimental data from photoacoustic measurements. The values of thermal diffusivity, energy gap and carrier transport properties have been found to be porosity-dependent. The energy band gap of n-type and p-type porous silicon layers was higher than the energy band gap obtained for silicon substrate (1.11 eV). In the range of porosity (50-76%) of the studies, our results found that the optical band-gap energy of p-type porous silicon (1.80-2.00 eV) was higher than that of the n-type porous silicon layer (1.70-1.86 eV). The thermal diffusivity value of the n-type porous layer was found to be higher than that of the p-type and both were observed to increase linearly with increasing layer porosity

  9. Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

    Qiu, Feng; Spring, Andrew M. [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Sato, Hiromu [Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Maeda, Daisuke; Ozawa, Masa-aki; Odoi, Keisuke [Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507 (Japan); Aoki, Isao; Otomo, Akira [National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-ku, Kobe 651-2492 (Japan); Yokoyama, Shiyoshi, E-mail: s-yokoyama@cm.kyushu-u.ac.jp [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan)

    2015-09-21

    Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that of the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.

  10. Second order optical nonlinearity in silicon by symmetry breaking

    Cazzanelli, Massimo, E-mail: massimo.cazzanelli@unitn.it [Laboratorio IdEA, Dipartimento di Fisica, Università di Trento, via Sommarive, 14 Povo (Trento) (Italy); Schilling, Joerg, E-mail: joerg.schilling@physik.uni-halle.de [Centre for Innovation Competence SiLi-nano, Martin-Luther-University Halle-Wittenberg, Karl-Freiherr-von-Fritsch Str. 3, 06120 Halle (Germany)

    2016-03-15

    Although silicon does not possess a dipolar bulk second order nonlinear susceptibility due to its centro-symmetric crystal structure, in recent years several attempts were undertaken to create such a property in silicon. This review presents the different sources of a second order susceptibility (χ{sup (2)}) in silicon and the connected second order nonlinear effects which were investigated up to now. After an introduction, a theoretical overview discusses the second order nonlinearity in general and distinguishes between the dipolar contribution—which is usually dominating in non-centrosymmetric structures—and the quadrupolar contribution, which even exists in centro-symmetric materials. Afterwards, the classic work on second harmonic generation from silicon surfaces in reflection measurements is reviewed. Due to the abrupt symmetry breaking at surfaces and interfaces locally a dipolar second order susceptibility appears, resulting in, e.g., second harmonic generation. Since the bulk contribution is usually small, the study of this second harmonic signal allows a sensitive observation of the surface/interface conditions. The impact of covering films, strain, electric fields, and defect states at the interfaces was already investigated in this way. With the advent of silicon photonics and the search for ever faster electrooptic modulators, the interest turned to the creation of a dipolar bulk χ{sup (2)} in silicon. These efforts have been focussing on several experiments applying an inhomogeneous strain to the silicon lattice to break its centro-symmetry. Recent results suggesting the impact of electric fields which are exerted from fixed charges in adjacent covering layers are also included. After a subsequent summary on “competing” concepts using not Si but Si-related materials, the paper will end with some final conclusions, suggesting possible future research direction in this dynamically developing field.

  11. Dynamic characterization of silicon nanowires using a terahertz optical asymmetric demultiplexer-based pump-probe scheme

    Ji, Hua; Cleary, C. S.; Dailey, J. M.

    2012-01-01

    Dynamic phase and amplitude all-optical responses of silicon nanowires are characterized using a terahertz optical asymmetric demultiplexer (TOAD) based pump-probe scheme. Ultra-fast recovery is observed for moderate pump powers....

  12. Optic nerve compression as a late complication of a hydrogel explant with silicone encircling band.

    Crama, Niels; Kluijtmans, Leo; Klevering, B Jeroen

    2018-06-01

    To present a complication of compressive optic neuropathy caused by a swollen hydrogel explant and posteriorly displaced silicone encircling band. A 72-year-old female patient presented with progressive visual loss and a tilted optic disc. Her medical history included a retinal detachment in 1993 that was treated with a hydrogel explant under a solid silicone encircling band. Visual acuity had decreased from 6/10 to 6/20 and perimetry showed a scotoma in the temporal superior quadrant. On Magnetic Resonance Imaging (MRI), compression of the optic nerve by a displaced silicone encircling band inferior nasally in combination with a swollen episcleral hydrogel explant was observed. Surgical removal of the hydrogel explant and silicone encircling band was uneventful and resulted in improvement of visual acuity and visual field loss. This is the first report on compressive optic neuropathy caused by swelling of a hydrogel explant resulting in a dislocated silicone encircling band. The loss of visual function resolved upon removal of the explant and encircling band.

  13. Synthesis, Characterization and Optical Constants of Silicon Oxycarbide

    Memon Faisal Ahmed

    2017-01-01

    Full Text Available High refractive index glasses are preferred in integrated photonics applications to realize higher integration scale of passive devices. With a refractive index that can be tuned between SiO2 (1.45 and a-SiC (3.2, silicon oxycarbide SiOC offers this flexibility. In the present work, silicon oxycarbide thin films from 0.1 – 2.0 μm thickness are synthesized by reactive radio frequency magnetron sputtering a silicon carbide SiC target in a controlled argon and oxygen environment. The refractive index n and material extinction coefficient k of the silicon oxycarbide films are acquired with variable angle spectroscopic ellipsometry over the UV-Vis-NIR wavelength range. Keeping argon and oxygen gases in the constant ratio, the refractive index n is found in the range from 1.41 to 1.93 at 600 nm which is almost linearly dependent on RF power of sputtering. The material extinction coefficient k has been estimated to be less than 10-4 for the deposited silicon oxycarbide films in the visible and near-infrared wavelength regions. Morphological and structural characterizations with SEM and XRD confirms the amorphous phase of the SiOC films.

  14. The Athena Optics

    Bavdaz, Marcos; Wille, Eric; Shortt, Brian

    2015-01-01

    studies and in parallel a comprehensive series of technology preparation activities. [1-3].The core enabling technology for the high performance mirror is the Silicon Pore Optics (SPO), a modular X-ray optics technology, which utilises processes and equipment developed for the semiconductor industry [4...

  15. Porous silicon technology for integrated microsystems

    Wallner, Jin Zheng

    With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

  16. Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

    Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

    2006-01-01

    Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

  17. Guided acoustic and optical waves in silicon-on-insulator for Brillouin scattering and optomechanics

    Christopher J. Sarabalis

    2016-10-01

    Full Text Available We numerically study silicon waveguides on silica showing that it is possible to simultaneously guide optical and acoustic waves in the technologically important silicon on insulator (SOI material system. Thin waveguides, or fins, exhibit geometrically softened mechanical modes at gigahertz frequencies with phase velocities below the Rayleigh velocity in glass, eliminating acoustic radiation losses. We propose slot waveguides on glass with telecom optical frequencies and strong radiation pressure forces resulting in Brillouin gains on the order of 500 and 50 000 W−1m−1 for backward and forward Brillouin scattering, respectively.

  18. Optical near-field lithography on hydrogen-passivated silicon surfaces

    Madsen, Steen; Müllenborn, Matthias; Birkelund, Karen

    1996-01-01

    by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.......We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced...

  19. Clinical trial of pin-point photodynamic therapy using an optic fiber for the improvement of enlarged facial pores: a case study.

    Kim, Sangeun; Cho, Kyeong-Hun

    2009-01-01

    There are few publications on the treatment options for facial pore size reduction. A focused therapy is needed. To evaluate the efficacy of selective photodynamic therapy (PDT) using an optic fiber for the size reduction of large facial pores. A series of five patients (skin phototypes IV-V) with large facial pores received two successive weekly treatments with an 810-nm diode laser using a fine optic fiber after indocyanine green (ICG) was applied selectively to enlarged pores. Patients were evaluated using digital photography at each treatment session, and at 3 months post-operation. Clinical assessment scores were determined at each treatment session and follow-up visit. Patient satisfaction surveys were obtained at the end of the study. All five participants who completed the 3-month follow-up gave a subjective assessment of reduction of facial pore size. Modest to excellent improvement was achieved. This study demonstrates that treatment with pin-point PDT using an optic fiber is a well-tolerated and effective regimen for the reduction of facial pore size.

  20. Anisotropic elasticity of silicon and its application to the modelling of X-ray optics

    Zhang, Lin; Barrett, Raymond; Cloetens, Peter; Detlefs, Carsten; Sanchez del Rio, Manuel

    2014-01-01

    Anisotropic elasticity of single-crystal silicon, applications to modelling of a bent X-ray mirror, and thermal deformation of a liquid-nitrogen-cooled monochromator crystal are presented. The crystal lattice of single-crystal silicon gives rise to anisotropic elasticity. The stiffness and compliance coefficient matrix depend on crystal orientation and, consequently, Young’s modulus, the shear modulus and Poisson’s ratio as well. Computer codes (in Matlab and Python) have been developed to calculate these anisotropic elasticity parameters for a silicon crystal in any orientation. These codes facilitate the evaluation of these anisotropy effects in silicon for applications such as microelectronics, microelectromechanical systems and X-ray optics. For mechanically bent X-ray optics, it is shown that the silicon crystal orientation is an important factor which may significantly influence the optics design and manufacturing phase. Choosing the appropriate crystal orientation can both lead to improved performance whilst lowering mechanical bending stresses. The thermal deformation of the crystal depends on Poisson’s ratio. For an isotropic constant Poisson’s ratio, ν, the thermal deformation (RMS slope) is proportional to (1 + ν). For a cubic anisotropic material, the thermal deformation of the X-ray optics can be approximately simulated by using the average of ν 12 and ν 13 as an effective isotropic Poisson’s ratio, where the direction 1 is normal to the optic surface, and the directions 2 and 3 are two normal orthogonal directions parallel to the optical surface. This average is independent of the direction in the optical surface (the crystal plane) for Si(100), Si(110) and Si(111). Using the effective isotropic Poisson’s ratio for these orientations leads to an error in thermal deformation smaller than 5.5%

  1. Anisotropic elasticity of silicon and its application to the modelling of X-ray optics

    Zhang, Lin, E-mail: zhang@esrf.fr; Barrett, Raymond; Cloetens, Peter; Detlefs, Carsten; Sanchez del Rio, Manuel [European Synchrotron Radiation Facility, 6 Rue Jules Horowitz, BP 220, 38043 Grenoble (France)

    2014-04-04

    Anisotropic elasticity of single-crystal silicon, applications to modelling of a bent X-ray mirror, and thermal deformation of a liquid-nitrogen-cooled monochromator crystal are presented. The crystal lattice of single-crystal silicon gives rise to anisotropic elasticity. The stiffness and compliance coefficient matrix depend on crystal orientation and, consequently, Young’s modulus, the shear modulus and Poisson’s ratio as well. Computer codes (in Matlab and Python) have been developed to calculate these anisotropic elasticity parameters for a silicon crystal in any orientation. These codes facilitate the evaluation of these anisotropy effects in silicon for applications such as microelectronics, microelectromechanical systems and X-ray optics. For mechanically bent X-ray optics, it is shown that the silicon crystal orientation is an important factor which may significantly influence the optics design and manufacturing phase. Choosing the appropriate crystal orientation can both lead to improved performance whilst lowering mechanical bending stresses. The thermal deformation of the crystal depends on Poisson’s ratio. For an isotropic constant Poisson’s ratio, ν, the thermal deformation (RMS slope) is proportional to (1 + ν). For a cubic anisotropic material, the thermal deformation of the X-ray optics can be approximately simulated by using the average of ν{sub 12} and ν{sub 13} as an effective isotropic Poisson’s ratio, where the direction 1 is normal to the optic surface, and the directions 2 and 3 are two normal orthogonal directions parallel to the optical surface. This average is independent of the direction in the optical surface (the crystal plane) for Si(100), Si(110) and Si(111). Using the effective isotropic Poisson’s ratio for these orientations leads to an error in thermal deformation smaller than 5.5%.

  2. Polarization effects in silicon-clad optical waveguides

    Carson, R. F.; Batchman, T. E.

    1984-01-01

    By changing the thickness of a semiconductor cladding layer deposited on a planar dielectric waveguide, the TE or TM propagating modes may be selectively attenuated. This polarization effect is due to the periodic coupling between the lossless propagating modes of the dielectric slab waveguide and the lossy modes of the cladding layer. Experimental tests involving silicon claddings show high selectivity for either polarization.

  3. Fabrication of silicon based glass fibres for optical communication

    Silicon based glass fibres are fabricated by conventional fibre drawing process. First, preform fabrication is carried out by means of conventional MCVD technique by using various dopants such as SiCl4, GeCl4, POCl3, and FeCl3. The chemicals are used in such a way that step index single mode fibre can be drawn.

  4. Large-aperture focusing of x rays with micropore optics using dry etching of silicon wafers.

    Ezoe, Yuichiro; Moriyama, Teppei; Ogawa, Tomohiro; Kakiuchi, Takuya; Mitsuishi, Ikuyuki; Mitsuda, Kazuhisa; Aoki, Tatsuhiko; Morishita, Kohei; Nakajima, Kazuo

    2012-03-01

    Large-aperture focusing of Al K(α) 1.49 keV x-ray photons using micropore optics made from a dry-etched 4 in. (100 mm) silicon wafer is demonstrated. Sidewalls of the micropores are smoothed with high-temperature annealing to work as x-ray mirrors. The wafer is bent to a spherical shape to collect parallel x rays into a focus. Our result supports that this new type of optics allows for the manufacturing of ultralight-weight and high-performance x-ray imaging optics with large apertures at low cost. © 2012 Optical Society of America

  5. High-speed all-optical logic inverter based on stimulated Raman scattering in silicon nanocrystal.

    Sen, Mrinal; Das, Mukul K

    2015-11-01

    In this paper, we propose a new device architecture for an all-optical logic inverter (NOT gate), which is cascadable with a similar device. The inverter is based on stimulated Raman scattering in silicon nanocrystal waveguides, which are embedded in a silicon photonic crystal structure. The Raman response function of silicon nanocrystal is evaluated to explore the transfer characteristic of the inverter. A maximum product criterion for the noise margin is taken to analyze the cascadability of the inverter. The time domain response of the inverter, which explores successful inversion operation at 100 Gb/s, is analyzed. Propagation delay of the inverter is on the order of 5 ps, which is less than the delay in most of the electronic logic families as of today. Overall dimension of the device is around 755  μm ×15  μm, which ensures integration compatibility with the matured silicon industry.

  6. SEM and HRTEM study of porous silicon--relationship between fabrication, morphology and optical properties

    Dian, J.; Macek, A.; Niznansky, D.; Nemec, I.; Vrkoslav, V.; Chvojka, T.; Jelinek, I.

    2004-01-01

    We studied the dependence of porous silicon (PS) morphology on fabrication conditions and the link between morphology, porosity and optical properties. P-type (1 0 0) silicon wafers with resistivity of 10 Ω cm were electrochemically etched in a HF:ethanol:water mixture at various HF concentrations and current densities. Porosity and thickness of the samples were determined gravimetrically. Detailed information about evolution of porous silicon layer morphology with variation of preparation conditions was obtained by scanning electron microscope (SEM), the presence of silicon nanoparticles was confirmed by high resolution transmission electron microscopy. Decrease of the mean size of silicon nanoparticles with increasing porous silicon porosity was revealed in a monotonous blue shift of photoluminescence (PL) maximum in room temperature photoluminescence spectra of studied samples. This blue shift is consistent with quantum confinement model of photoluminescence mechanism. We observed that total porosity of porous films cannot fully explain observed photoluminescence behavior and correct interpretation of the blue shift of photoluminescence spectra requires detailed knowledge of porous silicon morphology

  7. Temperature dependent investigation on optically active process of higher-order bands in irradiated silicon

    Shi Yi; Nanjing Univ., JS; Wu Fengmei; Nanjing Univ., JS; Zheng Youdou; Nanjing Univ., JS; Suezawa, M.; Imai, M.; Sumino, K.

    1996-01-01

    Optically active processes of the higher-order bands (HOB) are investigated at different temperatures in fast neutron irradiated silicon using Fourier transform infrared absorption measurement. It is shown that the optically active process is nearly temperature independent below 80 K, the slow decay process remains up to a heating temperature of 180 K. The observations are analyzed in terms of the relaxation behavior of photoexcited carriers governed by fast neutron radiation induced defect clusters. (orig.)

  8. Improved surface quality of anisotropically etched silicon {111} planes for mm-scale optics

    Cotter, J P; Hinds, E A; Zeimpekis, I; Kraft, M

    2013-01-01

    We have studied the surface quality of millimetre-scale optical mirrors produced by etching CZ and FZ silicon wafers in potassium hydroxide to expose the {111} planes. We find that the FZ surfaces have four times lower noise power at spatial frequencies up to 500 mm −1 . We conclude that mirrors made using FZ wafers have higher optical quality. (technical note)

  9. Optical coupling study of plastic scintillation detectors: evaluation of different silicon products

    Hamada, M.M.; Madi Filho, T.; Mesquita, C.H. de

    1990-01-01

    Properties of different optical oils and greases in the range of 320-560 nm were studied. Several parameters as the transmitance, index of refraction, plastic scintillator fluorescence emission and its influence in the resolution and pulse height of the detection system were described. This paper shows a design to analyse the optical quality or adequacy of the silicon oils and greases in the coupling between the detector and the photocathode of the photomultiplier. (author) [pt

  10. Modeling optical transmissivity of graphene grate in on-chip silicon photonic device

    Iraj S. Amiri

    2018-06-01

    Full Text Available A three-dimensional (3-D finite-difference-time-domain (FDTD analysis was used to simulate a silicon photonic waveguide. We have calculated power and transmission of the graphene used as single or multilayers to study the light transmission behavior. A new technique has been developed to define the straight silicon waveguide integrated with grate graphene layer. The waveguide has a variable grate spacing to be filled by the graphene layer. The number of graphene atomic layers varies between 100 and 1000 (or 380 nm and 3800 nm, the transmitted power obtained varies as ∼30% and ∼80%. The ∼99%, blocking of the light was occurred in 10,000 (or 38,000 nm atomic layers of the graphene grate. Keywords: Optical waveguide, Silicon waveguide, Grate, Graphene, Optical transmissivity

  11. Flow restrictor silicon membrane microvalve actuated by optically controlled paraffin phase transition

    Kolari, K; Havia, T; Stuns, I; Hjort, K

    2014-01-01

    Restrictor valves allow proportional control of fluid flow but are rarely integrated in microfluidic systems. In this study, an optically actuated silicon membrane restrictor microvalve is demonstrated. Its actuation is based on the phase transition of paraffin, using a paraffin wax mixed with a suitable concentration of optically absorbing nanographite particles. Backing up the membrane with oil (the melted paraffin) allows for a compliant yet strong contact to the valve seat, which enables handling of high pressures. At flow rates up to 30 µL min −1 and at a pressure of 2 bars, the valve can successfully be closed and control the flow level by restriction. The use of this paraffin composite as an adhesive layer sandwiched between the silicon valve and glass eases fabrication. This type of restrictor valve is best suited for high pressure, low volume flow silicon-based nanofluidic systems. (paper)

  12. Mid-IR optical properties of silicon doped InP

    Panah, Mohammad Esmail Aryaee; Han, Li; Norrman, Kion

    2017-01-01

    of growth conditions on the optical and electrical properties of silicon doped InP (InP:Si) in the wavelength range from 3 to 40 μm was studied. The carrier concentration of up to 3.9 × 1019 cm-3 is achieved by optimizing the growth conditions. The dielectric function, effective mass of electrons and plasma...

  13. Near-field optical microscope using a silicon-nitride probe

    van Hulst, N.F.; Moers, M.H.P.; Moers, M.H.P.; Noordman, O.F.J.; Noordman, O.F.J.; Tack, R.G.; Segerink, Franciscus B.; Bölger, B.; Bölger, B.

    1993-01-01

    Operation of an alternative near-field optical microscope is presented. The microscope uses a microfabricated silicon- nitride probe with integrated cantilever, as originally developed for force microscopy. The cantilever allows routine close contact near-field imaging o­n arbitrary surfaces without

  14. Fiber Optic Excitation of Silicon Microspheres in Amorphous and Crystalline Fluids

    Yilmaz, H.; Murib, M.S.; Serpenguzel, A.

    2016-01-01

    This study investigates the optical resonance spectra of free-standing monolithic single crystal silicon microspheres immersed in various amorphous fluids, such as air, water, ethylene glycol, and 4-Cyano-4’-pentylbiphenyl nematic liquid crystal. For the various amorphous fluids,

  15. Optical properties of chromophoric dissolved organic matter (CDOM) in surface and pore waters adjacent to an oil well in a southern California salt marsh.

    Bowen, Jennifer C; Clark, Catherine D; Keller, Jason K; De Bruyn, Warren J

    2017-01-15

    Chromophoric dissolved organic matter (CDOM) optical properties were measured in surface and pore waters as a function of depth and distance from an oil well in a southern California salt marsh. Higher fluorescence and absorbances in pore vs. surface waters suggest soil pore water is a reservoir of CDOM in the marsh. Protein-like fluorophores in pore waters at distinct depths corresponded to variations in sulfate depletion and Fe(II) concentrations from anaerobic microbial activity. These variations were supported by fluorescence indexes and are consistent with differences in optical molecular weight and aromaticity indicators. Fluorescence indices were consistent with autochthonous material of aquatic origin in surface waters, with more terrestrial, humified allochthonous material in deeper pore waters. CDOM optical properties were consistent with significantly enhanced microbial activity in regions closest to the oil well, along with a three-dimensional excitation/emission matrix fluorescence spectrum peak attributable to oil, suggesting anaerobic microbial degradation of oil. Copyright © 2016 Elsevier Ltd. All rights reserved.

  16. Spectral-domain optical coherence tomography on a silicon chip

    Akça, B.I.

    2012-01-01

    Optical coherence tomography (OCT) is a non-invasive optical technique for high-resolution cross-sectional imaging of specimens, with many applications in clinical medicine and industry (e.g. materials testing, quality assurance, and process control). Current state-of-the-art OCT systems operate in

  17. Porous silicon based micro-opto-electro-mechanical-systems (MOEMS) components for free space optical interconnects

    Song, Da

    2008-02-01

    One of the major challenges confronting the current integrated circuits (IC) industry is the metal "interconnect bottleneck". To overcome this obstacle, free space optical interconnects (FSOIs) can be used to address the demand for high speed data transmission, multi-functionality and multi-dimensional integration for the next generation IC. One of the crucial elements in FSOIs system is to develop a high performance and flexible optical network to transform the incoming optical signal into a distributed set of optical signals whose direction, alignment and power can be independently controlled. Among all the optical materials for the realization of FSOI components, porous silicon (PSi) is one of the most promising candidates because of its unique optical properties, flexible fabrication methods and integration with conventional IC material sets. PSi-based Distributed Bragg Reflector (DBR) and Fabry-Perot (F-P) structures with unique optical properties are realized by electrochemical etching of silicon. By incorporating PSi optical structures with Micro-Opto-Electro-Mechanical-Systems (MOEMS), several components required for FSOI have been developed. The first type of component is the out-of-plane freestanding optical switch. Implementing a PSi DBR structure as an optically active region, the device can realize channel selection by changing the tilting angle of the micromirror supported by the thermal bimorph actuator. All the fabricated optical switches have reached kHz working frequency and life time of millions of cycles. The second type of component is the in-plane tunable optical filter. By introducing PSi F-P structure into the in-plane PSi film, a thermally tunable optical filter with a sensitivity of 7.9nm/V has been realized for add/drop optical signal selection. Also, for the first time, a new type of PSi based reconfigurable diffractive optical element (DOE) has been developed. By using patterned photoresist as a protective mask for electrochemical

  18. Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region

    Franta, Daniel; Franta, Pavel; Vohánka, Jiří; Čermák, Martin; Ohlídal, Ivan

    2018-05-01

    Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for the determination of its thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.

  19. High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate

    Witmer, Jeremy D.; Valery, Joseph A.; Arrangoiz-Arriola, Patricio; Sarabalis, Christopher J.; Hill, Jeff T.; Safavi-Naeini, Amir H.

    2017-04-01

    Future quantum networks, in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality (Q) factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical Q factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices.

  20. Effect of UV irradiations on the structural and optical features of porous silicon: application in silicon solar cells

    Aouida, S.; Saadoun, M.; Boujmil, M.F.; Ben Rabha, M.; Bessaies, B.

    2004-01-01

    The aim of this paper is to investigate the structural and optical stability of porous silicon layers (PSLs) planned to be used in silicon solar cells technology. The PSLs were prepared by a HNO 3 /HF vapor etching (VE) based method. Fourier transform infrared (FT-IR) spectroscopy shows that fresh VE-based PSLs contain N-H and Si-F bonds related to a ammonium hexafluorosilicate (NH 4 ) 2 SiF 6 minor phase, and conventional Si-H x and Si-O x bonds. Free air exposures of PSLs without and with UV irradiation lead to oxidation or photo-oxidation of the porous layer, respectively. FT-IR characterisation of the PSLs shows that UV irradiations modify the transformation kinetics replacing instable Si-H x by Si-O x or Si-O-H bonds. When fresh PSLs undergo free air oxidation within 7 days, the surface reflectivity decreases from 10 to about 8%, while it drops to about 4% when a 10 min free air UV irradiation is applied. Long periods of free air oxidation do not ensure the reflectivity to be stable, whereas it becomes stable after only 10 min of UV irradiation. This behaviour was explained taking into account the kinetic differences between oxidation with and without UV irradiation. Fresh VE-based PSLs were found to improve efficiently the photovoltaic (PV) characteristics of crystalline silicon solar cells. The passivating action of VE-based PSLs was discussed. An improvement of the PV performances was observed solely for stable oxidized porous silicon (PS) structures obtained from UV irradiations

  1. Piezoelectric photothermal study of the optical properties of microcrystalline silicon near the bandgap

    Fukuyama, A.; Sakamoto, S.; Sonoda, S.; Wang, P.; Sakai, K.; Ikari, T.

    2006-01-01

    The optical absorption spectra of hydrogenated microcrystalline silicon (μc-Si:H) films deposited on glass and transparent conductive oxide (TCO) covered glass substrates were measured by using the piezoelectric photothermal (PPT) technique. The effects of the deposition rate on the optical absorption of μc-Si:H thin films were investigated from the nonradiative transition point of view. It was found that increasing the deposition rate resulted in a decrease of optical absorption and a shift of effective energy gap to the higher photon energy side. These changes in the optical properties of μc-Si:H cause the decrease of the number of carriers optically generated by absorbing sunlight, and results in a reduction in the photovoltaic conversion efficiency of the solar cells for high deposition rate samples. The usefulness of the PPT method for investigating the optical properties of thin and transparent μc-Si:H films was also demonstrated

  2. Optical interconnects based on VCSELs and low-loss silicon photonics

    Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian

    2018-02-01

    Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

  3. Channel-Selectable Optical Link Based on a Silicon Microring for on-Chip Interconnection

    Qiu Chen; Hu Ting; Wang Wan-Jun; Yu Ping; Jiang Xiao-Qing; Yang Jian-Yi

    2012-01-01

    A channel-selectable optical link based on a silicon microring resonator is proposed and demonstrated. This optical link consists of the wavelength-tunable microring modulators and the filters, defined on a silicon-on-insulator (SOI) platform. With a p—i—n junction embedded in the microring modulator, light at the resonant wavelength of the ring resonator is modulated. The 2 nd -order microring add-drop filter routes the modulated light. The channel selectivity is demonstrated by heating the microrings. With a thermal tuning efficiency of 5.9 mW/nm, the filter drop port response was successfully tuned with 0.8 nm channel spacing. We also show that modulation can be achieved in these channels. This device aims to offer flexibility and increase the bandwidth usage efficiency in optical interconnection

  4. Fabrication and optical characterization of light trapping silicon nanopore and nanoscrew devices

    Jin, Hyunjong; Logan Liu, G

    2012-01-01

    We have fabricated nanotextured Si substrates that exhibit controllable optical reflection intensities and colors. Si nanopore has a photon trapping nanostructure but has abrupt changes in the index of refraction displaying a darkened specular reflection. Nanoscrew Si shows graded refractive-index photon trapping structures that enable diffuse reflection to be as low as 2.2% over the visible wavelengths. By tuning the 3D nanoscale silicon structure, the optical reflection peak wavelength and intensity are changed in the wavelength range of 300–800 nm, making the surface have different reflectivity and apparent colors. The relation between the surface optical properties with the spatial features of the photon trapping nanostructures is examined. Integration of photon trapping structures with planar Si structure on the same substrate is also demonstrated. The tunable photon trapping silicon structures have potential applications in enhancing the performance of semiconductor photoelectric devices. (paper)

  5. Composition and optical properties tunability of hydrogenated silicon carbonitride thin films deposited by reactive magnetron sputtering

    Bachar, A.; Bousquet, A.; Mehdi, H.; Monier, G.; Robert-Goumet, C.; Thomas, L.; Belmahi, M.; Goullet, A.; Sauvage, T.; Tomasella, E.

    2018-06-01

    Radiofrequency reactive magnetron sputtering was used to deposit hydrogenated amorphous silicon carbonitride (a-SiCxNy:H) at 400 °C by sputtering a silicon target under CH4 and N2 reactive gas mixture. Rutherford backscattering spectrometry revealed that the change of reactive gases flow rate (the ratio R = FN2/(FN2+FCH4)) induced a smooth chemical composition tunability from a silicon carbide-like film for R = 0 to a silicon nitride-like one at R = 1 with a large area of silicon carbonitrides between the two regions. The deconvolution of Fourier Transform InfraRed and X-ray photoelectron spectroscopy spectrum highlighted a shift of the chemical environment of the deposited films corresponding to the changes seen by RBS. The consequence of these observations is that a control of refractive index in the range of [1.9-2.5] at λ = 633 nm and optical bandgap in the range [2 eV-3.8 eV] have been obtained which induces that these coatings can be used as antireflective coatings in silicon photovoltaic cells.

  6. Recent Optical and SEM Characterization of Genesis Solar Wind Concentrator Diamond on Silicon Collector

    Allton, Judith H.; Rodriquez, M. C.; Burkett, P. J.; Ross, D. K.; Gonzalez, C. P.; McNamara, K. M.

    2013-01-01

    One of the 4 Genesis solar wind concentrator collectors was a silicon substrate coated with diamond-like carbon (DLC) in which to capture solar wind. This material was designed for analysis of solar nitrogen and noble gases [1, 2]. This particular collector fractured during landing, but about 80% of the surface was recovered, including a large piece which was subdivided in 2012 [3, 4, 5]. The optical and SEM imaging and analysis described below supports the subdivision and allocation of the diamond-on-silicon (DOS) concentrator collector.

  7. Athermal silicon optical add-drop multiplexers based on thermo-optic coefficient tuning of sol-gel material.

    Namnabat, Soha; Kim, Kyung-Jo; Jones, Adam; Himmelhuber, Roland; DeRose, Christopher T; Trotter, Douglas C; Starbuck, Andrew L; Pomerene, Andrew; Lentine, Anthony L; Norwood, Robert A

    2017-09-04

    Silicon photonics has gained interest for its potential to provide higher efficiency, bandwidth and reduced power consumption compared to electrical interconnects in datacenters and high performance computing environments. However, it is well known that silicon photonic devices suffer from temperature fluctuations due to silicon's high thermo-optic coefficient and therefore, temperature control in many applications is required. Here we present an athermal optical add-drop multiplexer fabricated from ring resonators. We used a sol-gel inorganic-organic hybrid material as an alternative to previously used materials such as polymers and titanium dioxide. In this work we studied the thermal curing parameters of the sol-gel and their effect on thermal wavelength shift of the rings. With this method, we were able to demonstrate a thermal shift down to -6.8 pm/°C for transverse electric (TE) polarization in ring resonators with waveguide widths of 325 nm when the sol-gel was cured at 130°C for 10.5 hours. We also achieved thermal shifts below 1 pm/°C for transverse magnetic (TM) polarization in the C band under different curing conditions. Curing time compared to curing temperature shows to be the most important factor to control sol-gel's thermo-optic value in order to obtain an athermal device in a wide temperature range.

  8. Morphology of the porous silicon obtained by electrochemical anodization method

    Bertel H, S. D.; Dussán C, A.; Diaz P, J. M.

    2018-04-01

    In this report, the dependence of porous silicon with the synthesis parameters and their correlation with the optical and morphological properties is studied. The P-type silicon-crystalline samples and orientation were prepared by electrochemical anodization and were characterized using SEM in order to know the evolution of the pore morphology. It was observed that the porosity and thickness of the samples increased with the increase of the concentration in the solution and a high pore density (70%) with a pore size between 40nm and 1.5μm.

  9. Synthesis and characterization of a stable, label-free optical biosensor from TiO2-coated porous silicon.

    Li, Jianlin; Sailor, Michael J

    2014-05-15

    A nanoscale layer of TiO2 is coated on the inner pore walls of a porous silicon (PSi) film by room-temperature infiltration of a TiO2 sol-gel precursor and firing at 500 °C. The PSi:TiO2 composite films are characterized by Fourier transform infrared (FTIR), X-ray diffraction (XRD), energy dispersive X-ray spectral analysis (EDS), scanning electron microscopy (SEM) and reflective interferometric Fourier transform spectroscopy (RIFTS). The analysis indicates that TiO2 conformally coats the inner pore surfaces of the PSi film. The film displays greater aqueous stability in the pH range 2-12 relative to a PSi:SiO2 surface. A label-free optical interference immunosensor based on the TiO2-coated PSi film is demonstrated by real-time monitoring of the physical adsorption of protein A, followed by the specific binding of rabbit anti-sheep immunoglobulin (IgG) and then specific capture of sheep IgG. The time to achieve equilibrium for the physical adsorption of protein A on the surface of TiO2-coated PSi film is significantly greater than that of PSi film. The specificity of the protein A and rabbit anti-sheep IgG construct on the sensor is confirmed by tests with non-binding chicken IgG. The sensitivity of the immunosensor is shown to be 8210 ± 170 nm/refractive index unit (RIU). Copyright © 2013 Elsevier B.V. All rights reserved.

  10. X-ray excited optical luminescence (XEOL) and its application to porous silicon

    Hill, D.A.

    1998-09-01

    X-ray Excited Optical Luminescence (XEOL) is investigated as a local structural probe of the light-emitting sites in porous silicon. A detailed microscopic model of the XEOL process in porous silicon is proposed. A central aspect of the technique is an assessment of the spatial separation between the primary photoionisation event and subsequent optical radiative recombination. By constructing a Monte Carlo simulation of hot electron propagation in silicon using both elastic and inelastic scattering cross-sections, the mean minimum range of luminescence excitation can be calculated. This range is estimated as 546±1A for the silicon K-edge (∼ 1839eV), but is reduced to 8.9±0.1A for the silicon L 2,3 -edge (∼ 99eV). From known porous silicon properties, it is concluded that this mean minimum range is comparable to the actual range of excitation. Hence, more localised structural information may be obtained from L 2,3 -edge XEOL measurements. This important difference between the two spectra has been neglected in previous studies. Simultaneous measurements of the XEOL and total electron yield (TEY) x-ray absorption spectra (XAS) have been conducted at both the silicon K-edge and L 2,3 -edge for various porous silicon samples and related materials. Measurements have been conducted at the Si K-edge on a rapid thermally oxidised (RTO) porous silicon sample. XEOL spectra yield two distinct luminescence bands in the visible region. From multi-bunch wavelength-selective XEOL measurements, it is concluded that there are blue luminescent defective silica sites together with a red luminescent site originating from silicon-like material. The spectral time decay curve under pulsed x-ray excitation gives two distinct decay components; one fast in the range of a few nanoseconds and the other slow in the range of microseconds. Time-resolved XEOL measurements in single-bunch mode show that the fast band mirrors the blue wavelength XEOL whereas the slow band correlates with the

  11. Optically induced paramagnetism in amorphous hydrogenated silicon nitride thin films

    Warren, W.L.; Kanicki, J.; Buchwald, W.R.; Rong, F.C.; Harmatz, M.

    1992-01-01

    This paper reports that the creation mechanisms of Si and N dangling bond defect centers in amorphous hydrogenated silicon nitride thin films by ultra-violet (UV) illumination are investigated. The creation efficiency and density of Si centers in the N-rich films are independent of illumination temperature, strongly suggesting that the creation mechanism of the spins in electronic in nature, i.e., a charge transfer mechanism. However, our results suggest that the creation of the Si dangling bond in the Si-rich films are different. Last, we find that the creation of the N dangling-bond in N-rich films can be fit to a stretched exponential time dependence, which is characteristic of dispersive charge transport

  12. Ultrafast all-optical arithmetic logic based on hydrogenated amorphous silicon microring resonators

    Gostimirovic, Dusan; Ye, Winnie N.

    2016-03-01

    For decades, the semiconductor industry has been steadily shrinking transistor sizes to fit more performance into a single silicon-based integrated chip. This technology has become the driving force for advances in education, transportation, and health, among others. However, transistor sizes are quickly approaching their physical limits (channel lengths are now only a few silicon atoms in length), and Moore's law will likely soon be brought to a stand-still despite many unique attempts to keep it going (FinFETs, high-k dielectrics, etc.). This technology must then be pushed further by exploring (almost) entirely new methodologies. Given the explosive growth of optical-based long-haul telecommunications, we look to apply the use of high-speed optics as a substitute to the digital model; where slow, lossy, and noisy metal interconnections act as a major bottleneck to performance. We combine the (nonlinear) optical Kerr effect with a single add-drop microring resonator to perform the fundamental AND-XOR logical operations of a half adder, by all-optical means. This process is also applied to subtraction, higher-order addition, and the realization of an all-optical arithmetic logic unit (ALU). The rings use hydrogenated amorphous silicon as a material with superior nonlinear properties to crystalline silicon, while still maintaining CMOS-compatibility and the many benefits that come with it (low cost, ease of fabrication, etc.). Our method allows for multi-gigabit-per-second data rates while maintaining simplicity and spatial minimalism in design for high-capacity manufacturing potential.

  13. Terahertz optical-Hall effect for multiple valley band materials: n-type silicon

    Kuehne, P.; Hofmann, T.; Herzinger, C.M.; Schubert, M.

    2011-01-01

    The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial anisotropy. In this work we employ the optical-Hall effect at terahertz frequencies for analysis of free-charge carrier properties in multiple valley band materials, for which the optical free-charge carrier contributions originate from multiple Brillouin-zone conduction or valence band minima or maxima, respectively. We investigate exemplarily the room temperature optical-Hall effect in low phosphorous-doped n-type silicon where free electrons are located in six equivalent conduction-band minima near the X-point. We simultaneously determine their free-charge carrier concentration, mobility, and longitudinal and transverse effective mass parameters.

  14. Hybrid graphene/silicon integrated optical isolators with photonic spin–orbit interaction

    Ma, Jingwen; Sun, Xiankai; Xi, Xiang; Yu, Zejie

    2016-01-01

    Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphene's magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spins exhibit different responses to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with the extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 μm. Featuring graphene's CMOS compatibility and substantially reduced device footprint, our proposal sheds light on monolithic integration of nonreciprocal photonic devices.

  15. APPLIED OPTICS. Voltage-tunable circular photogalvanic effect in silicon nanowires.

    Dhara, Sajal; Mele, Eugene J; Agarwal, Ritesh

    2015-08-14

    Electronic bands in crystals can support nontrivial topological textures arising from spin-orbit interactions, but purely orbital mechanisms can realize closely related dynamics without breaking spin degeneracies, opening up applications in materials containing only light elements. One such application is the circular photogalvanic effect (CPGE), which is the generation of photocurrents whose magnitude and polarity depend on the chirality of optical excitation. We show that the CPGE can arise from interband transitions at the metal contacts to silicon nanowires, where inversion symmetry is locally broken by an electric field. Bias voltage that modulates this field further controls the sign and magnitude of the CPGE. The generation of chirality-dependent photocurrents in silicon with a purely orbital-based mechanism will enable new functionalities in silicon that can be integrated with conventional electronics. Copyright © 2015, American Association for the Advancement of Science.

  16. An all-silicone zoom lens in an optical imaging system

    Zhao Cun-Hua

    2013-01-01

    An all-silicone zoom lens is fabricated. A tunable metal ringer is fettered around the side edge of the lens. A nylon rope linking a motor is tied, encircling the notch in the metal ringer. While the motor is operating, the rope can shrink or release to change the focal length of the lens. A calculation method is developed to obtain the focal length and the zoom ratio. The testing is carried out in succession. The testing values are compared with the calculated ones, and they tally with each other well. Finally, the imaging performance of the all-silicone lens is demonstrated. The all-silicone lens has potential uses in cellphone cameras, notebook cameras, micro monitor lenses, etc. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  17. Optical gain coefficients of silicon: a theoretical study

    Tsai, Chin-Yi

    2018-05-01

    A theoretical model is presented and an explicit formula is derived for calculating the optical gain coefficients of indirect band-gap semiconductors. This model is based on the second-order time-dependent perturbation theory of quantum mechanics by incorporating all the eight processes of photon/phonon emission and absorption between the band edges of the conduction and valence bands. Numerical calculation results are given for Si. The calculated absorption coefficients agree well with the existing fitting formula of experiment data with two modes of phonons: optical phonons with energy of 57.73 meV and acoustic phonons with energy of 18.27 meV near (but not exactly at) the zone edge of the X-point in the dispersion relation of phonons. These closely match with existing data of 57.5 meV transverse optical (TO) phonons at the X4-point and 18.6 meV transverse acoustic (TA) phonons at the X3-point of the zone edge. The calculated results show that the material optical gain of Si will overcome free-carrier absorption if the energy separation of quasi-Fermi levels between electrons and holes exceeds 1.15 eV.

  18. Electrical and optical properties of silicon-doped gallium nitride

    Si-doped GaN films in polycrystalline form were deposited on quartz substrates at deposition temperatures ranging from 300–623 K using r.f. sputtering technique. Electrical, optical and microstructural properties were studied for these films. It was observed that films deposited at room temperature contained mainly ...

  19. The influence of noble-gas ion bombardment on the electrical and optical properties of clean silicon surfaces

    Martens, J.W.D.

    1980-01-01

    A study of the effect of argon and helium ion bombardment on the electrical and optical properties of the clean silicon (211) surface is described. The objective of the study was to determine the effect of noble gas ions on the density of surface states at the clean silicon surface. (Auth.)

  20. CO2 laser-induced directional recrystallization to produce single crystal silicon-core optical fibers with low loss

    Healy, Noel; Fokine, Michael; Franz, Yohann; Hawkins, Thomas; Jones, Maxwell; Ballato, John; Peacock, Anna C.; Gibson, Ursula J.

    2016-01-01

    Reduced losses in silicon-core fibers are obtained using CO2 laser directional recrystallization of the core. Single crystals with aspect ratios up to 1500:1 are reported, limited by the scan range of the equipment. This processing technique holds promise for bringing crystalline silicon-core fibers to a central role in nonlinear optics and signal processing applications.

  1. Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon.

    Li, Kun; Sun, Hao; Ren, Fan; Ng, Kar Wei; Tran, Thai-Truong D; Chen, Roger; Chang-Hasnain, Connie J

    2014-01-08

    Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 μm. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.

  2. Optical properties and ensemble characteristics of size purified Silicon nanocrystals

    Miller, Joseph Bradley

    Nanotechnology is at the forefront of current scientific research and nanocrystals are being hailed as the 'artificial' atoms of the 21st century. Semiconducting silicon nanocrystals (SiNCs) are prime candidates for potential commercial applications because of silicon's already ubiquitous presence in the semiconductor industry, nontoxicity and abundance in nature. For realization of these potential applications, the properties and behavior of SiNCs need to be understood and enhanced. In this report, some of the main SiNC synthesis schemes are discussed, including those we are currently experimenting with to create our own SiNCs and the one utilized to create the SiNCs used in this study. The underlying physics that governs the unique behavior of SiNCs is then presented. The properties of the as-produced SiNCs are determined to depend strongly on surface passivation and environment. Size purification, an important aspect of nanomaterial utilization, was successfully performed on our SiNCs though density gradient ultracentrifugation. We demonstrate that the size-purified fractions exhibit an enhanced ability for colloidal self-assembly, with better aligned nanocrystal energy levels which promotes greater photostability in close-packed films and produces a slight increase in photoluminescence (PL) quantum yield. The qualities displayed by the fractions are exploited to form SiNC clusters that exhibit photostable PL. An analysis of SiNC cluster (from individual nanocrystals to collections of more than one thousand) blinking and PL shows an improvement in their PL emitting 'on' times. Pure SiNC films and SiNC-polymer nanocomposites are created and the dependence of their PL on temperature is measured. For such nanocomposites, the coupling between the 'coffee-ring' effect and liquid-liquid phase separation is also examined for ternary mixtures of solvent, polymer and semiconducting nanocrystal. We discover that with the right SiNC-polymer concentration and polymer

  3. Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks.

    Derian, R; Tokár, K; Somogyi, B; Gali, Á; Štich, I

    2017-12-12

    We present a time-dependent density functional theory (TDDFT) study of the optical gaps of light-emitting nanomaterials, namely, pristine and heavily B- and P-codoped silicon crystalline nanoparticles. Twenty DFT exchange-correlation functionals sampled from the best currently available inventory such as hybrids and range-separated hybrids are benchmarked against ultra-accurate quantum Monte Carlo results on small model Si nanocrystals. Overall, the range-separated hybrids are found to perform best. The quality of the DFT gaps is correlated with the deviation from Koopmans' theorem as a possible quality guide. In addition to providing a generic test of the ability of TDDFT to describe optical properties of silicon crystalline nanoparticles, the results also open up a route to benchmark-quality DFT studies of nanoparticle sizes approaching those studied experimentally.

  4. Electroluminescence analysis for spatial characterization of parasitic optical losses in silicon heterojunction solar cells

    Ahmed, Nuha; Zhang, Lei; Sriramagiri, Gowri; Das, Ujjwal; Hegedus, Steven

    2018-04-01

    Electroluminescence (EL) coupled with reflection measurements are used to spatially quantify optical losses in silicon heterojunction solar cells due to plasmonic absorption in the metal back contacts. The effect of indium tin oxide back reflector in decreasing this plasmonic absorption is found to increase the reflection from the back nickel (Ni)-aluminum (Al) and Al metals by ˜12% and ˜41%, respectively, in both bifacial and front junction silicon solar cells. Losses due to back reflection are calculated by comparison between the EL emission signals in high and low back reflection samples and are shown to be in agreement with standard reflection measurements. We conclude that the optical properties of the back contact can significantly influence the EL intensity which complicates the interpretation of EL as being primarily due to recombination especially when comparing two different devices with spatially varying back surface structures.

  5. Thermally promoted addition of undecylenic acid on thermally hydrocarbonized porous silicon optical reflectors

    Jalkanen, Tero; Mäkilä, Ermei; Sakka, Tetsuo; Salonen, Jarno; Ogata, Yukio H

    2012-01-01

    Thermally promoted addition of undecylenic acid is studied as a method for modifying porous silicon optical reflectors that have been pre-treated with thermal hydrocarbonization. Successful derivatization of undecylenic acid is demonstrated and confirmed with Fourier transform infrared and X-ray photoelectron spectroscopies. The results indicate that the hydrocarbonization pre-treatment considerably improves stability against oxidation and chemical dissolution in basic environments. The two-s...

  6. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  7. Broadband and scalable optical coupling for silicon photonics using polymer waveguides

    La Porta, Antonio; Weiss, Jonas; Dangel, Roger; Jubin, Daniel; Meier, Norbert; Horst, Folkert; Offrein, Bert Jan

    2018-04-01

    We present optical coupling schemes for silicon integrated photonics circuits that account for the challenges in large-scale data processing systems such as those used for emerging big data workloads. Our waveguide based approach allows to optimally exploit the on-chip optical feature size, and chip- and package real-estate. It further scales well to high numbers of channels and is compatible with state-of-the-art flip-chip die packaging. We demonstrate silicon waveguide to polymer waveguide coupling losses below 1.5 dB for both the O- and C-bands with a polarisation dependent loss of <1 dB. Over 100 optical silicon waveguide to polymer waveguide interfaces were assembled within a single alignment step, resulting in a physical I/O channel density of up to 13 waveguides per millimetre along the chip-edge, with an average coupling loss of below 3.4 dB measured at 1310 nm.

  8. Analysis of silicon on insulator (SOI) optical microring add-drop filter based on waveguide intersections

    Kaźmierczak, Andrzej; Bogaerts, Wim; Van Thourhout, Dries; Drouard, Emmanuel; Rojo-Romeo, Pedro; Giannone, Domenico; Gaffiot, Frederic

    2008-04-01

    We present a compact passive optical add-drop filter which incorporates two microring resonators and a waveguide intersection in silicon-on-insulator (SOI) technology. Such a filter is a key element for designing simple layouts of highly integrated complex optical networks-on-chip. The filter occupies an area smaller than 10μm×10μm and exhibits relatively high quality factors (up to 4000) and efficient signal dropping capabilities. In the present work, the influence of filter parameters such as the microring-resonators radii and the coupling section shape are analyzed theoretically and experimentally

  9. Silicon photonic IC embedded optical-PCB for high-speed interconnect application

    Kallega, Rakshitha; Nambiar, Siddharth; Kumar, Abhai; Ranganath, Praveen; Selvaraja, Shankar Kumar

    2018-02-01

    Optical-Printed Circuit Board (PCB) is an emerging optical interconnect technology to bridge the gap between the board edge and the processing module. The technology so far has been used as a broadband transmitter using polymer waveguides in the PCB. In this paper, we report a Silicon Nitride based photonic IC embedded in the PCB along with the polymers as waveguides in the PCB. The motivation for such integration is to bring routing capability and to reduce the power loss due to broadcasting mode.

  10. Observation of an optical event horizon in a silicon-on-insulator photonic wire waveguide.

    Ciret, Charles; Leo, François; Kuyken, Bart; Roelkens, Gunther; Gorza, Simon-Pierre

    2016-01-11

    We report on the first experimental observation of an optical analogue of an event horizon in integrated nanophotonic waveguides, through the reflection of a continuous wave on an intense pulse. The experiment is performed in a dispersion-engineered silicon-on-insulator waveguide. In this medium, solitons do not suffer from Raman induced self-frequency shift as in silica fibers, a feature that is interesting for potential applications of optical event horizons. As shown by simulations, this also allows the observation of multiple reflections at the same time on fundamental solitons ejected by soliton fission.

  11. Mechanical Kerr nonlinearities due to bipolar optical forces between deformable silicon waveguides.

    Ma, Jing; Povinelli, Michelle L

    2011-05-23

    We use an analytical method based on the perturbation of effective index at fixed frequency to calculate optical forces between silicon waveguides. We use the method to investigate the mechanical Kerr effect in a coupled-waveguide system with bipolar forces. We find that a positive mechanical Kerr coefficient results from either an attractive or repulsive force. An enhanced mechanical Kerr coefficient several orders of magnitude larger than the intrinsic Kerr coefficient is obtained in waveguides for which the optical mode approaches the air light line, given appropriate design of the waveguide dimensions.

  12. Micro knife-edge optical measurement device in a silicon-on-insulator substrate.

    Chiu, Yi; Pan, Jiun-Hung

    2007-05-14

    The knife-edge method is a commonly used technique to characterize the optical profiles of laser beams or focused spots. In this paper, we present a micro knife-edge scanner fabricated in a silicon-on-insulator substrate using the micro-electromechanical-system technology. A photo detector can be fabricated in the device to allow further integration with on-chip signal conditioning circuitry. A novel backside deep reactive ion etching process is proposed to solve the residual stress effect due to the buried oxide layer. Focused optical spot profile measurement is demonstrated.

  13. Electro-optical properties of dislocations in silicon and their possible application for light emitters

    Arguirov, Tzanimir Vladimirov

    2007-10-14

    This thesis addresses the electro-optical properties of silicon, containing dislocations. The work demonstrates that dislocation specific radiation may provide a means for optical diagnostics of solar cell grade silicon. It provides insight into the mechanisms governing the dislocation recombination activity, their radiation, and how are they influenced by other defects present in silicon. We demonstrate that photoluminescence mapping is useful for monitoring the recombination activity in solar cell grade silicon and can be applied for identification of contaminants, based on their photoluminescence signatures. It is shown that the recombination at dislocations is strongly influenced by the presence of metals at the dislocation sites. The dislocation radiation activity correlates with their electrical activity. It is shown that the dislocation and band-to-band luminescence are essentially anti-correlated. {beta}FeSi{sub 2} precipitates, with a luminescence at 0.8 eV, were detected within the grains of block cast materials. They exhibit a characteristic feature of quantum dots, namely blinking. The second aspect of the thesis concerns the topic of silicon based light emitters for on-chip optical interconnects. The goal is an enhancement of sub-band-gap or band-to-band radiation by controlled formation of dislocation-rich areas in microelectronics-grade silicon as well as understanding of the processes governing such enhancement. For light emitters based on band-to-band emission it is shown, that internal quantum efficiency of nearly 2 % can be achieved, but the emission is essentially generated in the bulk of the wafer. On the other hand, light emitters utilizing the emission from dislocation-rich areas of a well localized wafer depth were explored. Three different methods for reproducible formation of a dislocation-rich region beneath the wafer surface were investigated and evaluated in view of their room temperature sub-band-gap radiation: (1) silicon implantation

  14. Electro-optical modulator in a polymerinfiltrated silicon slotted photonic crystal waveguide heterostructure resonator.

    Wülbern, Jan Hendrik; Petrov, Alexander; Eich, Manfred

    2009-01-05

    We present a novel concept of a compact, ultra fast electro-optic modulator, based on photonic crystal resonator structures that can be realized in two dimensional photonic crystal slabs of silicon as core material employing a nonlinear optical polymer as infiltration and cladding material. The novel concept is to combine a photonic crystal heterostructure cavity with a slotted defect waveguide. The photonic crystal lattice can be used as a distributed electrode for the application of a modulation signal. An electrical contact is hence provided while the optical wave is kept isolated from the lossy metal electrodes. Thereby, well known disadvantages of segmented electrode designs such as excessive scattering are avoided. The optical field enhancement in the slotted region increases the nonlinear interaction with an external electric field resulting in an envisaged switching voltage of approximately 1 V at modulation speeds up to 100 GHz.

  15. Ultrafast spontaneous emission of copper-doped silicon enhanced by an optical nanocavity.

    Sumikura, Hisashi; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya

    2014-05-23

    Dopants in silicon (Si) have attracted attention in the fields of photonics and quantum optics. However, the optical characteristics are limited by the small spontaneous emission rate of dopants in Si. This study demonstrates a large increase in the spontaneous emission rate of copper isoelectronic centres (Cu-IECs) doped into Si photonic crystal nanocavities. In a cavity with a quality factor (Q) of ~16,000, the photoluminescence (PL) lifetime of the Cu-IECs is 1.1 ns, which is 30 times shorter than the lifetime of a sample without a cavity. The PL decay rate is increased in proportion to Q/Vc (Vc is the cavity mode volume), which indicates the Purcell effect. This is the first demonstration of a cavity-enhanced ultrafast spontaneous emission from dopants in Si, and it may lead to the development of fast and efficient Si light emitters and Si quantum optical devices based on dopants with efficient optical access.

  16. Silicon nitride back-end optics for biosensor applications

    Romero-García, Sebastian; Merget, Florian; Zhong, Frank C.; Finkelstein, Hod; Witzens, Jeremy

    2013-05-01

    Silicon nitride (SiN) is a promising candidate material for becoming a standard high-performance solution for integrated biophotonics applications in the visible spectrum. As a key feature, its compatibility with the complementary-oxidemetal- semiconductor (CMOS) technology permits cost reduction at large manufacturing volumes that is particularly advantageous for manufacturing consumables. In this work, we show that the back-end deposition of a thin SiN film enables the large light-cladding interaction desirable for biosensing applications while the refractive index contrast of the technology (Δn ≍ 0.5) also enables a considerable level of integration with reduced waveguide bend radii. Design and experimental validation also show that several advantages are derived from the moderate SiN/SiO2 refractive index contrast, such as lower scattering losses in interconnection waveguides and relaxed tolerances to fabrication imperfections as compared to higher refractive index contrast material systems. As a drawback, a moderate refractive index contrast also makes the implementation of compact grating couplers more challenging, due to the fact that only a relatively weak scattering strength can be achieved. Thereby, the beam diffracted by the grating tends to be rather large and consequently exhibit stringent angular alignment tolerances. Here, we experimentally demonstrate how a proper design of the bottom and top cladding oxide thicknesses allows reduction of the full-width at half maximum (FWHM) and alleviates this problem. Additionally, the inclusion of a CMOS-compatible AlCu/TiN bottom reflector further decreases the FWHM and increases the coupling efficiency. Finally, we show that focusing grating designs greatly reduce the device footprint without penalizing the device metrics.

  17. Optical temperature sensor with enhanced sensitivity by employing hybrid waveguides in a silicon Mach-Zehnder interferometer

    Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

    2016-01-01

    We report on a novel design of an on-chip optical temperature sensor based on a Mach-Zehnder interferometer configuration where the two arms consist of hybrid waveguides providing opposite temperature-dependent phase changes to enhance the temperature sensitivity of the sensor. The sensitivity...... of the fabricated sensor with silicon/polymer hybrid waveguides is measured to be 172 pm/°C, which is two times larger than a conventional all-silicon optical temperature sensor (∼80 pm/°C). Moreover, a design with silicon/titanium dioxide hybrid waveguides is by calculation expected to have a sensitivity as high...

  18. Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes

    Behzad, Somayeh; Chegel, Raad; Moradian, Rostam; Shahrokhi, Masoud

    2014-09-01

    The effects of gallium doping on the structural, electro-optical and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) are investigated by using spin-polarized density functional theory. It is found from the calculation of the formation energies that gallium substitution for silicon atom is preferred. Our results show that gallium substitution at either single carbon or silicon atom site in SiCNT could induce spontaneous magnetization. The optical studies based on dielectric function indicate that new transition peaks and a blue shift are observed after gallium doping.

  19. Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

    Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2015-12-14

    Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

  20. Near-field optical nanopatterning of crystalline silicon

    Wysocki, G.; Heitz, J.; Baeuerle, D.

    2004-01-01

    Nanoscale photochemical and photophysical etching of Si in Cl 2 atmosphere is demonstrated by means of an optical near-field setup. With 351 nm Ar + -laser radiation and low intensities, the etching mechanism is purely photochemical. In this regime, the width of patterns - which is about 115 nm at full width at half maximum (FWHM) - corresponds, approximately, to the diameter of the fiber tip. The vertical etch rate is of the order of 1 nm/s. With 514.5 nm Ar + -laser light etching is observed only at significantly higher laser-light intensities. Patterns with width down to about 30 nm at FWHM have been achieved. Here, the lateral resolution corresponds to about 1/18 of the laser wavelength employed

  1. Silicon nanoparticles as contrast agents in the methods of optical biomedical diagnostics

    Zabotnov, S. V.; Kashaev, F. V.; Shuleiko, D. V.; Gongalsky, M. B.; Golovan, L. A.; Kashkarov, P. K.; Loginova, D. A.; Agrba, P. D.; Sergeeva, E. A.; Kirillin, M. Yu

    2017-07-01

    The efficiency of light scattering by nanoparticles formed using the method of picosecond laser ablation of silicon in water and by nanoparticles of mechanically grinded mesoporous silicon is compared. The ensembles of particles of both types possess the scattering coefficients sufficient to use them as contrast agents in optical coherence tomography (OCT), particularly in the range of wavelengths 700-1000 nm, where the absorption of both silicon and most biological and mimicking tissues is small. According to the Mie theory the main contribution to the scattering in this case is made by the particles having a relatively large size (150-300 nm). In the experiments on visualising the agar phantom surface by means of OCT, the contrast of the medium boundary, provided by nanoparticles amounted to 14 dB and 30 dB for the ablated particles and the porous silicon powder, respectively. The numerical simulation of OCT images of skin in the presence of nanoparticles, confirmed the efficiency of using them as a contrast agent.

  2. 3D silicon neural probe with integrated optical fibers for optogenetic modulation.

    Kim, Eric G R; Tu, Hongen; Luo, Hao; Liu, Bin; Bao, Shaowen; Zhang, Jinsheng; Xu, Yong

    2015-07-21

    Optogenetics is a powerful modality for neural modulation that can be useful for a wide array of biomedical studies. Penetrating microelectrode arrays provide a means of recording neural signals with high spatial resolution. It is highly desirable to integrate optics with neural probes to allow for functional study of neural tissue by optogenetics. In this paper, we report the development of a novel 3D neural probe coupled simply and robustly to optical fibers using a hollow parylene tube structure. The device shanks are hollow tubes with rigid silicon tips, allowing the insertion and encasement of optical fibers within the shanks. The position of the fiber tip can be precisely controlled relative to the electrodes on the shank by inherent design features. Preliminary in vivo rat studies indicate that these devices are capable of optogenetic modulation simultaneously with 3D neural signal recording.

  3. Two-dimensional optical phased array antenna on silicon-on-insulator.

    Van Acoleyen, Karel; Rogier, Hendrik; Baets, Roel

    2010-06-21

    Optical wireless links can offer a very large bandwidth and can act as a complementary technology to radiofrequency links. Optical components nowadays are however rather bulky. Therefore, we have investigated the potential of silicon photonics to fabricated integrated components for wireless optical communication. This paper presents a two-dimensional phased array antenna consisting of grating couplers that couple light off-chip. Wavelength steering of $0.24 degrees /nm is presented reducing the need of active phase modulators. The needed steering range is $1.5 degrees . The 3dB angular coverage range of these antennas is about $0.007pi sr with a directivity of more than 38dBi and antenna losses smaller than 3dB.

  4. Effect of fabrication parameters on morphological and optical properties of highly doped p-porous silicon

    Zare, Maryam, E-mail: mar.zare@gmail.com [Young Researchers Club, Khomeinishahr Branch, Islamic Azad University, Khomeinishahr (Iran, Islamic Republic of); Shokrollahi, Abbas [Young Researchers Club, Khomeinishahr Branch, Islamic Azad University, Khomeinishahr (Iran, Islamic Republic of); Seraji, Faramarz E. [Optical Communication Group, Iran Telecom Research Center, Tehran (Iran, Islamic Republic of)

    2011-09-01

    Porous silicon (PS) layers were fabricated by anodization of low resistive (highly doped) p-type silicon in HF/ethanol solution, by varying current density, etching time and HF concentration. Atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) analyses were used to investigate the physical properties and reflection spectrum was used to investigate the optical behavior of PS layers in different fabrication conditions. Vertically aligned mesoporous morphology is observed in fabricated films and with HF concentration higher than 20%. The dependence of porosity, layer thickness and rms roughness of the PS layer on current density, etching time and composition of electrolyte is also observed in obtained results. Correlation between reflectivity and fabrication parameters was also explored. Thermal oxidation was performed on some mesoporous layers that resulted in changes of surface roughness, mean height and reflectivity of the layers.

  5. Process control of high rate microcrystalline silicon based solar cell deposition by optical emission spectroscopy

    Kilper, T.; Donker, M.N. van den; Carius, R.; Rech, B.; Braeuer, G.; Repmann, T.

    2008-01-01

    Silicon thin-film solar cells based on microcrystalline silicon (μc-Si:H) were prepared in a 30 x 30 cm 2 plasma-enhanced chemical vapor deposition reactor using 13.56 or 40.68 MHz plasma excitation frequency. Plasma emission was recorded by optical emission spectroscopy during μc-Si:H absorber layer deposition at deposition rates between 0.5 and 2.5 nm/s. The time course of SiH * and H β emission indicated strong drifts in the process conditions particularly at low total gas flows. By actively controlling the SiH 4 gas flow, the observed process drifts were successfully suppressed resulting in a more homogeneous i-layer crystallinity along the growth direction. In a deposition regime with efficient usage of the process gas, the μc-Si:H solar cell efficiency was enhanced from 7.9 % up to 8.8 % by applying process control

  6. Sub-micron silicon nitride waveguide fabrication using conventional optical lithography.

    Huang, Yuewang; Zhao, Qiancheng; Kamyab, Lobna; Rostami, Ali; Capolino, Filippo; Boyraz, Ozdal

    2015-03-09

    We demonstrate a novel technique to fabricate sub-micron silicon nitride waveguides using conventional contact lithography with MEMS-grade photomasks. Potassium hydroxide anisotropic etching of silicon facilitates line reduction and roughness smoothing and is key to the technique. The fabricated waveguides is measured to have a propagation loss of 0.8dB/cm and nonlinear coefficient of γ = 0.3/W/m. A low anomalous dispersion of <100ps/nm/km is also predicted. This type of waveguide is highly suitable for nonlinear optics. The channels naturally formed on top of the waveguide also make it promising for plasmonics and quantum efficiency enhancement in sensing applications.

  7. Study of optical absorbance in porous silicon nanowires for photovoltaic applications

    Charrier, Joël

    2013-10-01

    Porous silicon nanowires (PSiNWs) layers fabrication was reported. Reflectance spectra were measured as a function of the nanowire length and were inferior to 0.1% and a strong photoluminescence (PL) signal was measured from samples. Models based on cone shape of nanowires located in circular and rectangular bases were used to calculate the reflectance using the transfer matrix formalism (TMF) of PSiNWs layer. The modeling of the reflectance permits to explain this value by taking account into the shape of the nanowires and its porosity. Optical absorbance and transmission were also theoretically studied. The absorbance was superior to that obtained with silicon nanowires and the ultimate efficiency was about equal to 25% for normal incidence angle. These results could be applied to the potential application in low-cost and high efficiency PSiNWs based solar cells. © 2013 Elsevier B.V. All rights reserved.

  8. Tailoring the Optical Properties of Silicon with Ion Beam Created Nanostructures for Advanced Photonics Applications

    Akhter, Perveen

    In today's fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption in thin film Si solar cells are of great importance and have been the focus of research for a few decades now. Another big issue of technology in this fast-paced world is the computing rate or data transfer rate between components of a chip in ultra-fast processors. Existing electronic interconnects suffering from the signal delays and heat generation issues are unable to handle high data rates. A possible solution to this problem is in replacing the electronic interconnects with optical interconnects which have large data carrying capacity. However, optical components are limited in size by the fundamental laws of diffraction to about half a wavelength of light and cannot be combined with nanoscale electronic components. Tremendous research efforts have been directed in search of an advanced technology which can bridge the size gap between electronic and photonic worlds. An emerging technology of "plasmonics'' which exploits the extraordinary optical properties of metal nanostructures to tailor the light at nanoscale has been considered a potential solution to both of the above-mentioned problems. Research conducted for this dissertation has an overall goal to investigate the optical properties of silicon with metal nanostructures for photovoltaics and advanced silicon photonics applications. The first part of the research focuses on achieving enhanced

  9. Effect of cell thickness on the electrical and optical properties of thin film silicon solar cell

    Zaki, A. A.; El-Amin, A. A.

    2017-12-01

    In this work Electrical and optical properties of silicon thin films with different thickness were measured. The thickness of the Si films varied from 100 to 800 μm. The optical properties of the cell were studied at different thickness. A maximum achievable current density (MACD) generated by a planar solar cell, was measured for different values of the cell thickness which was performed by using photovoltaic (PV) optics method. It was found that reducing the values of the cell thickness improves the open-circuit voltage (VOC) and the fill factor (FF) of the solar cell. The optical properties were measured for thin film Si (TF-Si) at different thickness by using the double beam UV-vis-NIR spectrophotometer in the wavelength range of 300-2000 nm. Some of optical parameters such as refractive index with dispersion relation, the dispersion energy, the oscillator energy, optical band gap energy were calculated by using the spectra for the TF-Si with different thickness.

  10. Towards a subcutaneous optical biosensor based on thermally hydrocarbonised porous silicon.

    Tong, Wing Yin; Sweetman, Martin J; Marzouk, Ezzat R; Fraser, Cara; Kuchel, Tim; Voelcker, Nicolas H

    2016-01-01

    Advanced biosensors in future medicine hinge on the evolvement of biomaterials. Porous silicon (pSi), a generally biodegradable and biocompatible material that can be fabricated to include environment-responsive optical characteristics, is an excellent candidate for in vivo biosensors. However, the feasibility of using this material as a subcutaneously implanted optical biosensor has never been demonstrated. Here, we investigated the stability and biocompatibility of a thermally-hydrocarbonised (THC) pSi optical rugate filter, and demonstrated its optical functionality in vitro and in vivo. We first compared pSi films with different surface chemistries and observed that the material was cytotoxic despite the outstanding stability of the THC pSi films. We then showed that the cytotoxicity correlates with reactive oxygen species levels, which could be mitigated by pre-incubation of THC pSi (PITHC pSi). PITHC pSi facilitates normal cellular phenotypes and is biocompatible in vivo. Importantly, the material also possesses optical properties capable of responding to microenvironmental changes that are readable non-invasively in cell culture and subcutaneous settings. Collectively, we demonstrate, for the first time, that PITHC pSi rugate filters are both biocompatible and optically functional for lab-on-a-chip and subcutaneous biosensing scenarios. We believe that this study will deepen our understanding of cell-pSi interactions and foster the development of implantable biosensors. Copyright © 2015 Elsevier Ltd. All rights reserved.

  11. Electro-optical logic gates based on graphene-silicon waveguides

    Chen, Weiwei; Yang, Longzhi; Wang, Pengjun; Zhang, Yawei; Zhou, Liqiang; Yang, Tianjun; Wang, Yang; Yang, Jianyi

    2016-08-01

    In this paper, designs of electro-optical AND/NAND, OR/ NOR, XOR/XNOR logic gates based on cascaded silicon graphene switches and regular 2×1 multimode interference combiners are presented. Each switch consists of a Mach-Zehnder interferometer in which silicon slot waveguides embedded with graphene flakes are designed for phase shifters. High-speed switching function is achieved by applying an electrical signal to tune the Fermi levels of graphene flakes causing the variation of modal effective index. Calculation results show the crosstalk in the proposed optical switch is lower than -22.9 dB within a bandwidth from 1510 nm to 1600 nm. The designed six electro-optical logic gates with the operation speed of 10 Gbit/s have a minimum extinction ratio of 35.6 dB and a maximum insertion loss of 0.21 dB for transverse electric modes at 1.55 μm.

  12. The passive optical properties of a silicon nanoparticle-embedded benzocyclobutene polymer waveguide

    Chiu, J.-J.; Perng, Tsong P

    2008-01-01

    The passive optical properties of a silicon nanoparticle-embedded benzocyclobutene (BCB) waveguide were investigated. The silicon nanoparticles, of a size varying from 6 to 25 nm, were prepared by vapor condensation. The transmission modes and losses were examined by the prism coupler and cut-back methods. A He-Ne laser beam with a wavelength of 6328 A was used to measure the effective index and thickness of the waveguide. Laser light could be efficiently coupled into the BCB waveguide when the embedded Si nanoparticles were smaller than 6 nm. The film thickness and effective index of the Si-embedded BCB waveguide were measured to be 1.825 μm and 1.565, respectively. The optical transmission losses of the pure BCB and Si-embedded ridge waveguides measured by the cut-back method were 0.85 and 1.63 dB cm -1 , respectively. Although the optical loss was increased by the embedded Si, the disturbance of the output contour was quite small. This result demonstrates that the nanoparticle-embedded polymer waveguide may be used for optoelectronic integrated circuits

  13. Optical properties of metal nanoparticles embedded in amorphous silicon analysed using discrete dipole approximation

    Fantoni, Alessandro; Fernandes, Miguel; Vygranenko, Yuri; Vieira, Manuela; Oliveira-Silva, Rui P.; Prazeres, D. M. F.; Ribeiro, Ana P. C.; Alegria, Elisabete C. B. A.

    2018-02-01

    Localized surface plasmons (LSP) can be excited in metal nanoparticles (NP) by UV, visible or NIR light and are described as coherent oscillation of conduction electrons. Taking advantage of the tunable optical properties of NPs, we propose the realization of a plasmonic structure, based on the LSP interaction of NP with an embedding matrix of amorphous silicon. This study is directed to define the characteristics of NP and substrate necessary to the development of a LSP proteomics sensor that, once provided immobilized antibodies on its surface, will screen the concentration of selected antigens through the determination of LSPR spectra and peaks of light absorption. Metals of interest for NP composition are: Aluminium and Gold. Recent advances in nanoparticle production techniques allow almost full control over shapes and size, permitting full control over their optical and plasmonic properties and, above all, over their responsive spectra. Analytical solution is only possible for simple NP geometries, therefore our analysis, is realized recurring to computer simulation using the Discrete Dipole Approximation method (DDA). In this work we use the free software DDSCAT to study the optical properties of metal nanoparticles embedded in an amorphous silicon matrix, as a function of size, shape, aspect-ratio and metal type. Experimental measurements realized with arrays of metal nanoparticles are compared with the simulations.

  14. Linear and Non-Linear Optical Imaging of Cancer Cells with Silicon Nanoparticles

    Tolstik, Elen; Osminkina, Liubov A.; Akimov, Denis; Gongalsky, Maksim B.; Kudryavtsev, Andrew A.; Timoshenko, Victor Yu.; Heintzmann, Rainer; Sivakov, Vladimir; Popp, Jürgen

    2016-01-01

    New approaches for visualisation of silicon nanoparticles (SiNPs) in cancer cells are realised by means of the linear and nonlinear optics in vitro. Aqueous colloidal solutions of SiNPs with sizes of about 10–40 nm obtained by ultrasound grinding of silicon nanowires were introduced into breast cancer cells (MCF-7 cell line). Further, the time-varying nanoparticles enclosed in cell structures were visualised by high-resolution structured illumination microscopy (HR-SIM) and micro-Raman spectroscopy. Additionally, the nonlinear optical methods of two-photon excited fluorescence (TPEF) and coherent anti-Stokes Raman scattering (CARS) with infrared laser excitation were applied to study the localisation of SiNPs in cells. Advantages of the nonlinear methods, such as rapid imaging, which prevents cells from overheating and larger penetration depth compared to the single-photon excited HR-SIM, are discussed. The obtained results reveal new perspectives of the multimodal visualisation and precise detection of the uptake of biodegradable non-toxic SiNPs by cancer cells and they are discussed in view of future applications for the optical diagnostics of cancer tumours. PMID:27626408

  15. All-optical switching via four-wave mixing Bragg scattering in a silicon platform

    Yun Zhao

    2017-02-01

    Full Text Available We employ the process of non-degenerate four-wave mixing Bragg scattering to demonstrate all-optical control in a silicon platform. In our configuration, a strong, non-information-carrying pump is mixed with a weak control pump and an input signal in a silicon-on-insulator waveguide. Through the optical nonlinearity of this highly confining waveguide, the weak pump controls the wavelength conversion process from the signal to an idler, leading to a controlled depletion of the signal. The strong pump, on the other hand, plays the role of a constant bias. In this work, we show experimentally that it is possible to implement this low-power switching technique as a first step towards universal optical logic gates, and test the performance with random binary data. Even at very low powers, where the signal and control pump levels are almost equal, the eye-diagrams remain open, indicating a successful operation of the logic gates.

  16. Optical Evaluation of the Rear Contacts of Crystalline Silicon Solar Cells by Coupled Electromagnetic and Statistical Ray-Optics Modeling

    Dabirian, Ali

    2017-02-15

    High-efficiency crystalline silicon (c-Si) solar cells increasingly feature sophisticated electron and hole contacts aimed at minimizing electronic losses. At the rear of photovoltaic devices, such contacts—usually consisting of stacks of functional layers—offer opportunities to enhance the infrared response of the solar cells. Here, we propose an accurate and simple modeling procedure to evaluate the infrared performance of rear contacts in c-Si solar cells. Our method combines full-wave electromagnetic modeling of the rear contact with a statistical ray optics model to obtain the fraction of optical energy dissipated from the rear contact relative to that absorbed by the Si wafer. Using this technique, we study the impact of the refractive index, extinction coefficient, and thickness of the rear-passivating layer and establish basic design rules. In addition, we evaluate novel optical structures, including stratified thin films, nanoparticle composites, and conductive nanowires embedded in a low-index dielectric matrix, for integration into advanced rear contacts in c-Si photovoltaic devices. From an optical perspective, nanowire structures preserving low contact resistance appear to be the most effective approach to mitigating dissipation losses from the rear contact.

  17. All-optical 10 Gb/s AND logic gate in a silicon microring resonator

    Xiong, Meng; Lei, Lei; Ding, Yunhong

    2013-01-01

    An all-optical AND logic gate in a single silicon microring resonator is experimentally demonstrated at 10 Gb/s with 50% RZ-OOK signals. By setting the wavelengths of two intensity-modulated input pumps on the resonances of the microring resonator, field-enhanced four-wave mixing with a total inp...... power of only 8.5 dBm takes place in the ring, resulting in the generation of an idler whose intensity follows the logic operation between the pumps. Clear and open eye diagrams with a bit-error- ratio below 10−9 are achieved....

  18. Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals

    Kanagasekaran, T. [Department of Physics, Anna University, Chennai 600 025 (India); Department of Physics and Astrophysics, University of Delhi, New Delhi 110 007 (India); Mythili, P. [Department of Physics, Anna University, Chennai 600 025 (India); Bhagavannarayana, G. [Materials Characterization Division, National Physical Laboratory, New Delhi 110012 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110 067 (India); Gopalakrishnan, R. [Department of Physics, Anna University, Chennai 600 025 (India)], E-mail: krgkrishnan@annauniv.edu

    2009-08-01

    The 50 MeV silicon ion irradiation induced modifications on structural, optical and dielectric properties of solution grown glycine monophosphate (GMP) crystals were studied. The high-resolution X-ray diffraction study shows the unaltered value of integrated intensity on irradiation. The dielectric constant as a function of frequency and temperature was studied. UV-visible studies reveal the decrease in bandgap values on irradiation and presence of F-centers. The fluorescence spectrum shows the existence of some energy levels, which remains unaffected after irradiation. The scanning electron micrographs reveal the defects formed on irradiation.

  19. 12.5 Gb/s carrier-injection silicon Mach—Zehnder optical modulator

    Chen Hongtao; Ding Jianfeng; Yang Lin

    2012-01-01

    We demonstrate a 12.5 Gb/s carrier-injection silicon Mach—Zehnder optical modulator. Under a nonreturn-zero (NRZ) pre-emphasized electrical drive signal with voltage swing of 6.3 V and forward bias of 0.7 V, the eye is clearly opened with an extinction ratio of 8.4 dB. The device exhibits high modulation efficiency, with a figure of merit V π L of 0.036 V·mm. (semiconductor devices)

  20. Ultra-high speed all-optical signal processing using silicon waveguides and a carbon nanotubes based mode-locked laser

    Ji, Hua

    This thesis concerns the use of nano-engineered silicon waveguides for ultra-high speed optical serial data signal processing. The fundamental nonlinear properties of nano-engineered silicon waveguides are characterized. Utilizing the nonlinear effect in nano-engineered silicon waveguides for dem...

  1. Injection molding of high precision optics for LED applications made of liquid silicone rubber

    Hopmann, Christian; Röbig, Malte [Institute of Plastics Processing (IKV), RWTH Aachen University, Pontstraße 49, 52062 Aachen (Germany)

    2016-03-09

    Light Emitting Diodes (LED) conquer the growing global market of lighting technologies. Due to their advantages, they are increasingly used in consumer products, in lighting applications in the home and in the mobility sector as well as in industrial applications. Particularly, with regard to the increasing use of high-power LED (HP-LED) the materials in the surrounding area of the light emitting semiconductor chip are of utmost importance. While the materials behind the semiconductor chip are optimized for maximum heat dissipation, the materials currently used for the encapsulation of the semiconductor chip (primary optics) and the secondary optics encounter their limits due to the high temperatures. In addition certain amounts of blue UV radiation degrade the currently used materials such as epoxy resins or polyurethanes for primary optics. In the context of an ongoing joint research project with various partners from the industry, an innovative manufacturing method for high precision optics for LED applications made of liquid silicone rubber (LSR) is analyzed at the Institut of Plastics Processing (IKV), Aachen. The aim of this project is to utilize the material-specific advantages of high transparent LSR, especially the excellent high temperature resistance and the great freedom in design. Therefore, a high integrated injection molding process is developed. For the production of combined LED primary and secondary optics a LED board is placed in an injection mold and overmolded with LSR. Due to the integrated process and the reduction of subcomponents like the secondary optics the economics of the production process can be improved significantly. Furthermore combined LED optics offer an improved effectiveness, because there are no losses of the light power at the transition of the primary and secondary optics.

  2. Influence of the silicon concentration on the optical and electrical properties of reactively sputtered Zr-Si-N nanocomposite coatings

    Pilloud, D.; Pierson, J.F.; Pichon, L.

    2006-01-01

    Zr-Si-N films were deposited on silicon and X38CrMoV5 steel substrates by sputtering composite Zr-Si targets in reactive Ar-N 2 mixture. The silicon concentration in the deposited films was adjusted by the variation of the number of Si chips located on the target erosion zone. As a function of the silicon content, the films exhibited the following structures: insertion of Si into the ZrN lattice, nanocomposite (nc-ZrN/a-SiN x ) and an amorphous-like structure. Addition of silicon into ZrN-based coatings induced a lost of the golden aspect due to the decrease of the metallic behaviour. This result was confirmed by ellipsometric measurements. The films refractive index increased with the silicon concentration. On the other hand, a continuous decrease of the extinction coefficient was noticed. The effect of the silicon content on the optical properties of Zr-Si-N films was discussed as a function of the films structure and the occurrence of new optical absorptions due to the silicon chemical bonds. Finally, the evolution of the films electrical resistivity was discussed in connection to the films structure changes

  3. Rectangular optical filter based on high-order silicon microring resonators

    Bao, Jia-qi; Yu, Kan; Wang, Li-jun; Yin, Juan-juan

    2017-07-01

    The rectangular optical filter is one of the most important optical switching components in the dense wavelength division multiplexing (DWDM) fiber-optic communication system and the intelligent optical network. The integrated highorder silicon microring resonator (MRR) is one of the best candidates to achieve rectangular filtering spectrum response. In general, the spectrum response rectangular degree of the single MRR is very low, so it cannot be used in the DWDM system. Using the high-order MRRs, the bandwidth of flat-top pass band, the out-of-band rejection degree and the roll-off coefficient of the edge will be improved obviously. In this paper, a rectangular optical filter based on highorder MRRs with uniform couplers is presented and demonstrated. Using 15 coupled race-track MRRs with 10 μm in radius, the 3 dB flat-top pass band of 2 nm, the out-of-band rejection ratio of 30 dB and the rising and falling edges of 48 dB/nm can be realized successfully.

  4. Rectangular optical filter based on high-order silicon microring resonators

    BAO Jia-qi; YU Kan; WANG Li-jun; YIN Juan-juan

    2017-01-01

    The rectangular optical filter is one of the most important optical switching components in the dense wavelength division multiplexing (DWDM) fiber-optic communication system and the intelligent optical network.The integrated highorder silicon microring resonator (MRR) is one of the best candidates to achieve rectangular filtering spectrum response.In general,the spectrum response rectangular degree of the single MRR is very low,so it cannot be used in the DWDM system.Using the high-order MRRs,the bandwidth of flat-top pass band,the out-of-band rejection degree and the roll-off coefficient of the edge will be improved obviously.In this paper,a rectangular optical filter based on highorder MRRs with uniform couplers is presented and demonstrated.Using 15 coupled race-track MRRs with 10 μm in radius,the 3 dB flat-top pass band of 2 nm,the out-of-band rejection ratio of 30 dB and the rising and falling edges of 48 dB/nm can be realized successfully.

  5. The all-optical modulator in dielectric-loaded waveguide with graphene-silicon heterojunction structure

    Sun, Feiying; Xia, Liangping; Nie, Changbin; Shen, Jun; Zou, Yixuan; Cheng, Guiyu; Wu, Hao; Zhang, Yong; Wei, Dongshan; Yin, Shaoyun; Du, Chunlei

    2018-04-01

    All-optical modulators based on graphene show great promise for on-chip optical interconnects. However, the modulation performance of all-optical modulators is usually based on the interaction between graphene and the fiber, limiting their potential in high integration. Based on this point, an all-optical modulator in a dielectric-loaded waveguide (DLW) with a graphene-silicon heterojunction structure (GSH) is proposed. The DLW raises the waveguide mode, which provides a strong light-graphene interaction. Sufficient tuning of the graphene Fermi energy beyond the Pauli blocking effect is obtained with the presented GSH structure. Under the modulation light with a wavelength of 532 nm and a power of 60 mW, a modulation efficiency of 0.0275 dB µm-1 is achieved for light with a communication wavelength of 1.55 µm in the experiment. This modulator has the advantage of having a compact footprint, which may make it a candidate for achieving a highly integrated all-optical modulator.

  6. Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption

    Xin, Maoqing; Danner, Aaron J.; Eng Png, Ching; Thor Lim, Soon

    2009-04-01

    This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 µW/µm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 µm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300 MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration.

  7. Effect of rapid oxidation on optical and electrical properties of silicon nanowires obtained by chemical etching

    Karyaoui, M.; Bardaoui, A.; Ben Rabha, M.; Harmand, J. C.; Amlouk, M.

    2012-05-01

    In the present work, we report the investigation of passivated silicon nanowires (SiNWs) having an average radius of 3.7 μm, obtained by chemical etching of p-type silicon (p-Si). The surface passivation of the SiNWs was performed through a rapid oxidation conducted under a controlled atmosphere at different temperatures and durations. The morphology of the SiNWs was examined using a scanning electron microscope (SEM) that revealed a wave-like structure of dense and vertically aligned one-dimensional silicon nanostructures. On the other hand, optical and electrical characterizations of the SiNWs were studied using a UV-Vis-NIR spectrometer, the Fourier transform infrared spectroscopy (FTIR) and I-V measurements. The reflectance of SiNWs has been dropped to approximately 2% in comparison to that of bare p-Si. This low reflectance slightly increased after carrying out the rapid thermal annealing. The observed behavior was attributed to the formation of a SiO2 layer, as confirmed by FTIR measurements. Finally, the electrical measurements have shown that the rapid oxidation, at certain conditions, contributes to the improvement of the electrical responses of the SiNWs, which can be of great interest for photovoltaic applications.

  8. Anomalous optical surface absorption in nominally pure silicon samples at 1550 nm

    Bell, Angus S.; Steinlechner, Jessica; Martin, Iain W.; Craig, Kieran; Cunningham, William; Rowan, Sheila; Hough, Jim; Schnabel, Roman; Khalaidovski, Alexander

    2017-10-01

    The announcement of the direct detection of gravitational waves (GW) by the LIGO and Virgo collaboration in February 2016 has removed any uncertainty around the possibility of GW astronomy. It has demonstrated that future detectors with sensitivities ten times greater than the Advanced LIGO detectors would see thousands of events per year. Many proposals for such future interferometric GW detectors assume the use of silicon test masses. Silicon has low mechanical loss at low temperatures, which leads to low displacement noise for a suspended interferometer mirror. In addition to the low mechanical loss, it is a requirement that the test masses have a low optical loss. Measurements at 1550 nm have indicated that material with a low enough bulk absorption is available; however there have been suggestions that this low absorption material has a surface absorption of  >100 ppm which could preclude its use in future cryogenic detectors. We show in this paper that this surface loss is not intrinsic but is likely to be a result of particular polishing techniques and can be removed or avoided by the correct polishing procedure. This is an important step towards high gravitational wave detection rates in silicon based instruments.

  9. Anomalous optical surface absorption in nominally pure silicon samples at 1550 nm

    Bell, Angus S; Steinlechner, Jessica; Martin, Iain W; Craig, Kieran; Cunningham, William; Rowan, Sheila; Hough, Jim; Schnabel, Roman; Khalaidovski, Alexander

    2017-01-01

    The announcement of the direct detection of gravitational waves (GW) by the LIGO and Virgo collaboration in February 2016 has removed any uncertainty around the possibility of GW astronomy. It has demonstrated that future detectors with sensitivities ten times greater than the Advanced LIGO detectors would see thousands of events per year. Many proposals for such future interferometric GW detectors assume the use of silicon test masses. Silicon has low mechanical loss at low temperatures, which leads to low displacement noise for a suspended interferometer mirror. In addition to the low mechanical loss, it is a requirement that the test masses have a low optical loss. Measurements at 1550 nm have indicated that material with a low enough bulk absorption is available; however there have been suggestions that this low absorption material has a surface absorption of  >100 ppm which could preclude its use in future cryogenic detectors. We show in this paper that this surface loss is not intrinsic but is likely to be a result of particular polishing techniques and can be removed or avoided by the correct polishing procedure. This is an important step towards high gravitational wave detection rates in silicon based instruments. (paper)

  10. Structural and optical properties of surface-hydrogenated silicon nanocrystallites prepared by reactive pulsed laser ablation

    Makino, Toshiharu; Inada, Mitsuru; Umezu, Ikurou; Sugimura, Akira

    2005-01-01

    Pulsed laser ablation (PLA) in an inert background gas is a promising technique for preparing Si nanoparticles. Although an inert gas is appropriate for preparing pure material, a reactive background gas can be used to prepare compound nanoparticles. We performed PLA in hydrogen gas to prepare hydrogenated silicon nanoparticles. The mean diameter of the primary particles measured using transmission electron microscopy was approximately 5 nm. The hydrogen content in the deposits was very high and estimated to be about 20%. The infrared absorption corresponding to Si-H n (n = 1, 2, 3) bonds on the surface were observed at around 2100 cm -1 . The Raman scattering peak corresponding to crystalline Si was observed, and that corresponding to amorphous Si was negligibly small. These results indicate that the Si nanoparticles were not an alloy of Si and hydrogen but Si nanocrystallite (nc-Si) covered by hydrogen or hydrogenated amorphous silicon. This means that PLA in reactive H 2 gas is a promising technique for preparing surface passivated nc-Si. The deposition mechanism and optical properties of the surface passivated silicon nanocrystallites are discussed

  11. Mesoporous Bragg reflectors: block-copolymer self-assembly leads to building blocks with well defined continuous pores and high control over optical properties

    Guldin, S.

    2011-08-19

    Mesoporous distributed Bragg re ectors (MDBRs) exhibit porosity on the sub-optical length scale. This makes them ideally suited as sensing platforms in biology and chemistry as well as for light management in optoelectronic devices. Here we present a new fast forward route for the fabrication of MDBRs which relies on the self-assembling properties of the block copolymer poly(isoprene-block -ethylene oxide) (PI-b -PEO) in combination with sol-gel chemistry. The interplay between structure directing organic host and co-assembled inorganic guest allows the ne tuning of refractive index in the outcome material. The refractive index dierence between the high and low porosity layer can be as high as 0.4, with the optical interfaces being well dened. Following a 30 min annealing protocol after each layer deposition enables the fast and reliable stacking of MDBRs which exhibit a continuous TiO2 network with large accessible pores and high optical quality.

  12. Control of the optical properties of silicon and chromium mixed oxides deposited by reactive magnetron sputtering

    Vergara, L.; Galindo, R. Escobar; Martinez, R.; Sanchez, O.; Palacio, C.; Albella, J.M.

    2011-01-01

    The development of mixed-oxide thin films allows obtaining materials with better properties than those of the different binary oxides, which makes them suitable for a great number of applications in different fields, such as tribology, optics or microelectronics. In this paper we investigate the deposition of mixed chromium and silicon oxides deposited by reactive magnetron sputtering with a view to use them as optical coatings with an adjustable refractive index. These films have been characterized by means of Rutherford backscattering spectrometry, Auger electron spectroscopy, X-ray diffraction, scanning electron microscopy, Fourier-transform infrared spectroscopy and spectroscopic ellipsometry so as to determine how the deposition conditions influence the characteristics of the material. We have found that the deposition parameter whose influence determines the properties of the films to a greater extent is the amount of oxygen in the reactive sputtering gas.

  13. Optical absorption enhancement in silicon nanowire arrays with a large lattice constant for photovoltaic applications.

    Lin, Chenxi; Povinelli, Michelle L

    2009-10-26

    In this paper, we use the transfer matrix method to calculate the optical absorptance of vertically-aligned silicon nanowire (SiNW) arrays. For fixed filling ratio, significant optical absorption enhancement occurs when the lattice constant is increased from 100 nm to 600 nm. The enhancement arises from an increase in field concentration within the nanowire as well as excitation of guided resonance modes. We quantify the absorption enhancement in terms of ultimate efficiency. Results show that an optimized SiNW array with lattice constant of 600 nm and wire diameter of 540 nm has a 72.4% higher ultimate efficiency than a Si thin film of equal thickness. The enhancement effect can be maintained over a large range of incidence angles.

  14. Slow light enhanced optical nonlinearity in a silicon photonic crystal coupled-resonator optical waveguide.

    Matsuda, Nobuyuki; Kato, Takumi; Harada, Ken-Ichi; Takesue, Hiroki; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya

    2011-10-10

    We demonstrate highly enhanced optical nonlinearity in a coupled-resonator optical waveguide (CROW) in a four-wave mixing experiment. Using a CROW consisting of 200 coupled resonators based on width-modulated photonic crystal nanocavities in a line defect, we obtained an effective nonlinear constant exceeding 10,000 /W/m, thanks to slow light propagation combined with a strong spatial confinement of light achieved by the wavelength-sized cavities.

  15. Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

    Driscoll, Jeffrey B.

    Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields

  16. Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

    Weiying, Ou; Lei, Zhao; Hongwei, Diao; Jun, Zhang; Wenjing, Wang

    2011-05-01

    Porous silicon (PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte. Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover, the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated. The results show that the TMAH textured surfaces with PS formation present a dramatic decrease in reflectance. The longer the anodizing time is, the lower the reflectance. Moreover, an initial surface with bigger pyramids achieved lower reflectance in a short wavelength range. A minimum reflectance of 3.86% at 460 nm is achieved for a short anodizing time of 2 min. Furthermore, the reflectance spectrum of the sample, which was etched in 3 vol.% TMAH for 25 min and then anodized for 20 min, is extremely flat and lies between 3.67% and 6.15% in the wavelength range from 400 to 1040 nm. In addition, for a short anodizing time, a slight increase in the effective carrier lifetime is observed. Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells.

  17. Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

    Ou Weiying; Zhao Lei; Diao Hongwei; Zhang Jun; Wang Wenjing, E-mail: wjwangwj@126.com [Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China)

    2011-05-15

    Porous silicon (PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte. Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover, the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated. The results show that the TMAH textured surfaces with PS formation present a dramatic decrease in reflectance. The longer the anodizing time is, the lower the reflectance. Moreover, an initial surface with bigger pyramids achieved lower reflectance in a short wavelength range. A minimum reflectance of 3.86% at 460 nm is achieved for a short anodizing time of 2 min. Furthermore, the reflectance spectrum of the sample, which was etched in 3 vol.% TMAH for 25 min and then anodized for 20 min, is extremely flat and lies between 3.67% and 6.15% in the wavelength range from 400 to 1040 nm. In addition, for a short anodizing time, a slight increase in the effective carrier lifetime is observed. Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells. (semiconductor technology)

  18. A new generation of ultra-dense optical I/O for silicon photonics

    Wlodawski, Mitchell S.; Kopp, Victor I.; Park, Jongchul; Singer, Jonathan; Hubner, Eric E.; Neugroschl, Daniel; Chao, Norman; Genack, Azriel Z.

    2014-03-01

    In response to the optical packaging needs of a rapidly growing silicon photonics market, Chiral Photonics, Inc. (CPI) has developed a new generation of ultra-dense-channel, bi-directional, all-optical, input/output (I/O) couplers that bridge the data transport gap between standard optical fibers and photonic integrated circuits. These couplers, called Pitch Reducing Optical Fiber Arrays (PROFAs), provide a means to simultaneously match both the mode field and channel spacing (i.e. pitch) between an optical fiber array and a photonic integrated circuit (PIC). Both primary methods for optically interfacing with PICs, via vertical grating couplers (VGCs) and edge couplers, can be addressed with PROFAs. PROFAs bring the signal-carrying cores, either multimode or singlemode, of many optical fibers into close proximity within an all-glass device that can provide low loss coupling to on-chip components, including waveguides, gratings, detectors and emitters. Two-dimensional (2D) PROFAs offer more than an order of magnitude enhancement in channel density compared to conventional one-dimensional (1D) fiber arrays. PROFAs can also be used with low vertical profile solutions that simplify optoelectronic packaging while reducing PIC I/O real estate usage requirements. PROFA technology is based on a scalable production process for microforming glass preform assemblies as they are pulled through a small oven. An innovative fiber design, called the "vanishing core," enables tailoring the mode field along the length of the PROFA to meet the coupling needs of disparate waveguide technologies, such as fiber and onchip. Examples of single- and multi-channel couplers fabricated using this technology will be presented.

  19. All-Optical Wavelength Conversion of a High-Speed RZ-OOK Signal in a Silicon Nanowire

    Hu, Hao; Ji, Hua; Galili, Michael

    2011-01-01

    All-optical wavelength conversion of a 320 Gb/s line-rate RZ-OOK signal is demonstrated based on four-wave mixing in a 3.6 mm long silicon nanowire. Bit error rate measurements validate the performance within FEC limits.......All-optical wavelength conversion of a 320 Gb/s line-rate RZ-OOK signal is demonstrated based on four-wave mixing in a 3.6 mm long silicon nanowire. Bit error rate measurements validate the performance within FEC limits....

  20. All-Optical 40 Gbit/s Regenerative Wavelength Conversion Based on Cross-Phase Modulation in a Silicon Nanowire

    Jensen, Asger Sellerup; Hu, Hao; Ji, Hua

    2013-01-01

    We successfully demonstrate all-optical regeneration of a 40 Gbit/s signal based on cross-phase modulation in a silicon nanowire. Bit-error-rate measurements show an average of 1.7dB improvement in receiver sensitivity after the regeneration.......We successfully demonstrate all-optical regeneration of a 40 Gbit/s signal based on cross-phase modulation in a silicon nanowire. Bit-error-rate measurements show an average of 1.7dB improvement in receiver sensitivity after the regeneration....

  1. Magnetic and optical properties of carbon and silicon decorated free standing buckled germanene: A DFT approach

    Dhar, Namrata; Jana, Debnarayan

    2018-04-01

    Ab initio magnetic and optical properties of group IV elements (carbon (C) and silicon (Si)) decorated free standing (FS) buckled germanene systems have been employed theoretically. Our study elucidates that, decoration of these elements in proper sites with suitable concentrations form dynamically stable configurations. Band structure is modified due to decoration of these atoms in Ge-nanosheet and pristine semi-metallic germanene undergoes to semiconductors with a finite amount of bandgap. Interestingly, this bandgap value meets closely the requirement of gap for field effect transistor (FET) applications. Moreover, significant magnetic moment is induced in non-magnetic germanene for C decorated structure and ground state in anti-ferromagnetic in nature for this structure. Along with magnetic property, optical properties like dielectric functions, optical absorption, electron energy loss spectra (EELS), refractive index and reflectivity of these systems have also been investigated. Maximum number of plasma frequencies appear for Si decorated configuration considering both parallel and perpendicular polarizations. In addition, birefringence characteristics of these configurations have also been studied as it is an important parameter in various applications of optical devices, liquid crystal displays, light modulators etc.

  2. Symmetry, strain, defects, and the nonlinear optical response of crystalline BaTiO3/silicon

    Kormondy, Kristy; Abel, Stefan; Popoff, Youri; Sousa, Marilyne; Caimi, Daniele; Siegwart, Heinz; Marchiori, Chiara; Rossell, Marta; Demkov, Alex; Fompeyrine, Jean

    Recent progress has been made towards exploiting the linear electro-optic or Pockels effect in ferroelectric BaTiO3 (BTO) for novel integrated silicon photonics devices. In such structures, the crystalline symmetry and domain structure of BTO determine which electro-optic tensor elements are accessible under application of an external electric field. For epitaxial thin films of BTO on Si (001), the role of defects in strain relaxation can lead to very different crystalline symmetry even for films of identical thickness. Indeed, through geometric phase analysis of high-resolution scanning transmission electron microscopy images, we map changes of the in-plane and out-of-plane lattice parameters across two 80-nm-thick BTO films. A corresponding 20% difference in the effective electro-optic response was measured by analyzing induced rotation of the polarization of a laser beam (λ = 1550 nm) transmitted through lithographically defined electrodes. Understanding, controlling, and modelling the role of BTO symmetry in nonlinear optics is of fundamental importance for the development of a hybrid BTO/Si photonics platform.. Work supported by the NSF (IRES-1358111), AFOSR (FA9550-12-10494), and European Commission (FP7-ICT-2013-11-619456-SITOGA).

  3. Optical design of ultrashort throw liquid crystal on silicon projection system

    Huang, Jiun-Woei

    2017-05-01

    An ultrashort throw liquid crystal on silicon (LCoS) projector for home cinema, virtual reality, and automobile heads-up display has been designed and fabricated. To achieve the best performance and highest-quality image, this study aimed to design wide-angle projection optics and optimize the illumination for LCoS. Based on the telecentric lens projection system and optimized Koehler illumination, the optical parameters were calculated. The projector's optical system consisted of a conic aspheric mirror and image optics using either symmetric double Gauss or a large-angle eyepiece to achieve a full projection angle larger than 155 deg. By applying Koehler illumination, image resolution was enhanced and the modulation transfer function of the image in high spatial frequency was increased to form a high-quality illuminated image. The partial coherence analysis verified that the design was capable of 2.5 lps/mm within a 2 m×1.5 m projected image. The throw ratio was less than 0.25 in HD format.

  4. Photonic Crystal Sensors Based on Porous Silicon

    Claudia Pacholski

    2013-04-01

    Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

  5. Photonic Crystal Sensors Based on Porous Silicon

    Pacholski, Claudia

    2013-01-01

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

  6. An ultra-small, low-power, all-optical flip-flop memory on a silicon chip

    Liu, Liu; Kumar, R.; Huybrechts, K.

    2010-01-01

    Ultra-small, low-power, all-optical switching and memory elements, such as all-optical flip-flops, as well as photonic integrated circuits of many such elements, are in great demand for all-optical signal buffering, switching and processing. Silicon-on-insulator is considered to be a promising......-flop working in a continuous-wave regime with an electrical power consumption of a few milliwatts, allowing switching in 60 ps with 1.8 fJ optical energy. The total power consumption and the device size are, to the best of our knowledge, the smallest reported to date at telecom wavelengths. This is also...

  7. Influence of radiation on photo-electric characteristics of silicon photo cells with optical coverings

    Madatov, R.S.; Safarov, N.A.; Gasymova, V.G.; Abdurragimov, A.A.; Allahverdiev, A.M.

    2003-01-01

    In the given work results of measurements volt-ampere and spectral characteristics of silicon photo cells with optical coverings ZnS+Nd 2 O 3 irradiated accelerated electrons with energy 4.5 MeV are carried out. Elements have been made by diffusion of phosphorus in p-silicon with specific resistance 2 Ω·cm. Under condition of illumination from source AMI the photocurrent of short circuit made 40 mA/cm 2 , and a photo voltage of idling 0.52 V, efficiency made 15 %. To receive low reflection in wide area of spectral sensitivity and by that as much as possible to increase efficiency of elements with the help of two-layer coverings. The irradiation of samples was made on linear accelerator EL4-6 at room temperature. It is received, that with increase in a dose of an irradiation the Photocurrent and photo voltage decreases, and speed reduction of a photo-current is stronger, than photo voltage. The critical integrated stream for these elements makes 4·10 12 el/cm 2 . In all researched samples radiating reduction of a voltage of idling in an interval of 10 10 -10 14 el/cm 2 makes 8-10 %. The analysis of spectral characteristics of the irradiated samples show, that reduction of a photocurrent in long-wave areas of a spectrum is connected by creation of radiating defects in a base part of an element. The increase in a critical stream in silicon solar elements with optical a covering in comparison with elements without a covering is connected with low concentration of defects in the base, created with electron. Thus, on the basis of complex research of influence on radiating stability silicon solar elements us it is established, that two-layer coverings not only increases efficiency of photo cells, but also considerably raise value of an integrated stream electrons, that is equivalent to increase in service life of the elements working in conditions of radiation

  8. Detection of Ammonia-Oxidizing Bacteria (AOB) Using a Porous Silicon Optical Biosensor Based on a Multilayered Double Bragg Mirror Structure.

    Zhang, Hongyan; Lv, Jie; Jia, Zhenhong

    2018-01-01

    We successfully demonstrate a porous silicon (PS) double Bragg mirror by electrochemical etching at room temperature as a deoxyribonucleic acid (DNA) label-free biosensor for detecting ammonia-oxidizing bacteria (AOB). Compared to various other one-dimension photonic crystal configurations of PS, the double Bragg mirror structure is quite easy to prepare and exhibits interesting optical properties. The width of high reflectivity stop band of the PS double Bragg mirror is about 761 nm with a sharp and deep resonance peak at 1328 nm in the reflectance spectrum, which gives a high sensitivity and distinguishability for sensing performance. The detection sensitivity of such a double Bragg mirror structure is illustrated through the investigation of AOB DNA hybridization in the PS pores. The redshifts of the reflectance spectra show a good linear relationship with both complete complementary and partial complementary DNA. The lowest detection limit for complete complementary DNA is 27.1 nM and the detection limit of the biosensor for partial complementary DNA is 35.0 nM, which provides the feasibility and effectiveness for the detection of AOB in a real environment. The PS double Bragg mirror structure is attractive for widespread biosensing applications and provides great potential for the development of optical applications.

  9. Plasma-enhanced chemical vapor deposited silicon oxynitride films for optical waveguide bridges for use in mechanical sensors

    Storgaard-Larsen, Torben; Leistiko, Otto

    1997-01-01

    In this paper the influence of RF power, ammonia flow, annealing temperature, and annealing time on the optical and mechanical properties of plasma-enhanced chemically vapor deposited silicon oxynitride films, is presented. A low refractive index (1.47 to 1.48) film having tensile stress has been...

  10. Silicon Waveguide with Lateral p-i-n Diode for Nonlinearity Compensation by On-Chip Optical Phase Conjugation

    Gajda, A.; Da Ros, Francesco; Porto da Silva, Edson

    2018-01-01

    A 1-dB Q-factor improvement through optical phase conjugation in a silicon waveguide with a lateral p-i-n diode enables BER

  11. Towards micro-assembly of hybrid MOEMS components on a reconfigurable silicon free-space micro-optical bench

    Bargiel, S; Gorecki, C; Rabenorosoa, K; Clévy, C; Lutz, P

    2010-01-01

    The 3D integration of hybrid chips is a viable approach for the micro-optical technologies to reduce the costs of assembly and packaging. In this paper a technology platform for the hybrid integration of MOEMS components on a reconfigurable silicon free-space micro-optical bench (FS-MOB) is presented. In this approach a desired optical component (e.g. micromirror, microlens) is integrated with a removable and adjustable silicon holder which can be manipulated, aligned and fixed in the precisely etched rail of the silicon baseplate by use of a robotic micro-assembly station. An active-based gripping system allows modification of the holder position on the baseplate with nanometre precision. The fabrication processes of the micromachined parts of the micro-optical bench, based on bulk micromachining of standard silicon wafer and SOI wafer, are described. The successful assembly of the holders, equipped with a micromirror and a refractive glass ball microlens, on the baseplate rail is demonstrated.

  12. Linear electro-optical behavior of hybrid nanocomposites based on silicon carbide nanocrystals and polymer matrices

    Bouclé, J.; Kassiba, A.; Makowska-Janusik, M.; Herlin-Boime, N.; Reynaud, C.; Desert, A.; Emery, J.; Bulou, A.; Sanetra, J.; Pud, A. A.; Kodjikian, S.

    2006-11-01

    An electro-optical activity has been recently reported for hybrid nanocomposite thin films where inorganic silicon carbide nanocrystals (ncSiC) are incorporated into polymer matrices. The role of the interface SiC polymer is suggested as the origin of the observed second order nonlinear optical susceptibility in the hybrid materials based on poly-(methylmethacrylate) (PMMA) or poly-( N -vinylcarbazole) matrices. In this work, we report an analysis of the electro-optical response of this hybrid system as a function of the ncSiC content and surface state in order to precise the interface effect in the observed phenomenon. Two specific ncSiC samples with similar morphology and different surface states are incorporated in the PMMA matrix. The effective Pockels parameters of the corresponding hybrid nanocomposites have been estimated up to 7.59±0.74pm/V ( 1wt.% of ncSiC in the matrix). The interfacial region ncSiC polymer is found to play the main role in the observed effect. Particularly, the electronic defects on the ncSiC nanocrystal surface modify the interfacial electrical interactions between the two components. The results are interpreted and discussed on the basis of the strong influence of these active centers in the interfacial region at the nanoscale, which are found to monitor the local hyperpolarizabilities and the macroscopic nonlinear optical susceptibilities. This approach allows us to complete the description and understanding of the electro-optical response in the hybrid SiC /polymer systems.

  13. Highly stable porous silicon-carbon composites as label-free optical biosensors.

    Tsang, Chun Kwan; Kelly, Timothy L; Sailor, Michael J; Li, Yang Yang

    2012-12-21

    A stable, label-free optical biosensor based on a porous silicon-carbon (pSi-C) composite is demonstrated. The material is prepared by electrochemical anodization of crystalline Si in an HF-containing electrolyte to generate a porous Si template, followed by infiltration of poly(furfuryl) alcohol (PFA) and subsequent carbonization to generate the pSi-C composite as an optically smooth thin film. The pSi-C sensor is significantly more stable toward aqueous buffer solutions (pH 7.4 or 12) compared to thermally oxidized (in air, 800 °C), hydrosilylated (with undecylenic acid), or hydrocarbonized (with acetylene, 700 °C) porous Si samples prepared and tested under similar conditions. Aqueous stability of the pSi-C sensor is comparable to related optical biosensors based on porous TiO(2) or porous Al(2)O(3). Label-free optical interferometric biosensing with the pSi-C composite is demonstrated by detection of rabbit IgG on a protein-A-modified chip and confirmed with control experiments using chicken IgG (which shows no affinity for protein A). The pSi-C sensor binds significantly more of the protein A capture probe than porous TiO(2) or porous Al(2)O(3), and the sensitivity of the protein-A-modified pSi-C sensor to rabbit IgG is found to be ~2× greater than label-free optical biosensors constructed from these other two materials.

  14. On the structural and optical properties of sputtered hydrogenated amorphous silicon thin films

    Barhdadi, A.; Chafik El ldrissi, M.

    2002-08-01

    The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen partial pressure during film deposition, and the effect of post-deposition thermal annealings on the main optical characteristics of the layers such as refraction index, optical gap and Urbach energy. Using the grazing X-rays reflectometry technique, thin film structural properties are examined immediately after films deposition as well as after surface oxidation or annealing. We show that low hydrogen pressures allow a saturation of dangling bonds in the layers, while high doses lead to the creation of new defects. We show also that thermal annealing under moderate temperatures improves the structural quality of the deposited layers. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears for a long time stay in the ambient. (author)

  15. Ultrafast all-optical order-to-chaos transition in silicon photonic crystal chips

    Bruck, Roman

    2016-06-08

    The interaction of light with nanostructured materials provides exciting new opportunities for investigating classical wave analogies of quantum phenomena. A topic of particular interest forms the interplay between wave physics and chaos in systems where a small perturbation can drive the behavior from the classical to chaotic regime. Here, we report an all-optical laser-driven transition from order to chaos in integrated chips on a silicon photonics platform. A square photonic crystal microcavity at telecom wavelengths is tuned from an ordered into a chaotic regime through a perturbation induced by ultrafast laser pulses in the ultraviolet range. The chaotic dynamics of weak probe pulses in the near infrared is characterized for different pump-probe delay times and at various positions in the cavity, with high spatial accuracy. Our experimental analysis, confirmed by numerical modelling based on random matrices, demonstrates that nonlinear optics can be used to control reversibly the chaotic behavior of light in optical resonators. (Figure presented.) . © 2016 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  16. Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films

    Birouk, B.; Madi, D. [Universite de Jijel, Laboratoire d' Etudes et de Modelisation en Electrotechnique (LAMEL), Cite Ouled Aissa, BP 98, Jijel (Algeria)

    2011-08-15

    The study reported in this paper contributes to better understanding the thermal oxidation effect on structural and optical properties of polycrystalline silicon heavily in situ P-LPCVD films. The deposits, doped at levels 3 x 10{sup 19} and 1.6 x 10{sup 20} cm{sup -3}, have been elaborated from silane decomposition (400 mTorrs, 605 C) on monosilicon substrate oriented left angle 111 right angle. The thermal oxidation was performed at temperatures: 850 C during 1 hour, 1000, 1050, and 1100 C during 15 minutes. The XRD spectra analysis pointed out significant left angle 111 right angle texture evolution, while in the case of left angle 220 right angle and left angle 311 right angle textures, the intensities are practically invariant (variations fall in the uncertainty intervals). The optical characterizations showed that refractive index and absorption coefficient are very sensitive to the oxidation treatment, mainly when the doping level is not very high. We think that atomic oxygen acts as defects passivating agent leading to carriers' concentration increasing. Besides, the optical behavior is modeled in visible and near infrared, by a seven-term polynomial function n {sup 2}=f({lambda} {sup 2}), with alternate signs, instead of theoretically unlimited terms number from Drude's model. It has been shown that fitting parameters fall on Gaussian curves like they do in the theoretical model. (orig.)

  17. Investigation of Different Colloidal Porous Silicon Solutions and Their Composite Solid Matrix Rods by Optical Techniques

    Khan, M. Naziruddin; Aldalbahi, Ali; Almohammedi, Abdullah

    2018-03-01

    Colloidal porous silicon (PSi) in different solvents was synthesized by simple chemical etching. Colloidal solutions were then prepared using different quantities of silicon wafer pieces (Pcs) and chloroplatinic (Pt) acid in catalyst solution. The effect on the properties of the colloidal solutions and composite rods were investigated using various optical characterization techniques. Absorption and photoluminescence (PL) intensity of the colloidal PSi solutions are observed to depend on the quantity of wafer Pcs, the Pt-solution, and the porosity formation on the wafer surface. The morphological structure of the PSi in a solvent and the solid-rod environments were studied using field-emission scanning electron microscopy (FE-SEM) and were observed to have different structures. A mono-oriented structure of PSi exists in tetrahydrofuran, which has stereo orientation in dioxane and dimethylsulfoxide (approximately 5-8 nm as confirmed using high resolution transmission electron microscopy). Subsequently, some colloidal PSi solutions were directly embedded in three types of sol-gel-based matrices, silica, ormosils (or organically modified silica) and polymer, which easily generated solid rods. Spontaneous emission (SE) of the PSi solutions and their composite rods were examined using a high power picosecond 355 nm laser source. The emitted PL and SE signals of the colloidal PSi solutions were dependent on the Pt volume, nature of the solvent, quantity of Si wafer piece, and pumping energy. The response of SE signals from the PSi composites rods is an interesting phenomenon, and such nanocomposites may be used for future research on light amplification.

  18. Transparent silicon strip sensors for the optical alignment of particle detector systems

    Blum, W.; Kroha, H.; Widmann, P.

    1995-05-01

    Modern large-area precision tracking detectors require increasing accuracy for the alignment of their components. A novel multi-point laser alignment system has been developed for such applications. The position of detector components with respect to reference laser beams is monitored by semi-transparent optical position sensors which work on the principle of silicon strip photodiodes. Two types of custom designed transparent strip sensors, based on crystalline and on amorphous silicon as active material, have been studied. The sensors are optimised for the typical diameters of collimated laser beams of 3-5 mm over distances of 10-20 m. They provide very high position resolution, on the order of 1 μm, uniformly over a wide measurement range of several centimeters. The preparation of the sensor surfaces requires special attention in order to achieve high light transmittance and minimum distortion of the traversing laser beams. At selected wavelengths, produced by laser diodes, transmission rates above 90% have been achieved. This allows to position more than 30 sensors along one laser beam. The sensors will be equipped with custom designed integrated readout electronics. (orig.)

  19. Optical constants of silicon monocrystals in the range of 70-400 eV

    Filatova, E.O.; Vinogradov, A.S.; Sorokin, I.A.; Zimkina, T.M.

    1983-01-01

    Optical constants (refractive index n and the linear absorption coefficient μ) of monocrystalline silicon in the quantum energy range of 70-400 eV are calculated from experimental reflection spectra using the dispersion Kramers-Kronig correlation. It is found that the general type of spectral dependences μ and n in the number of details of the structure and their energetic position depends but weakty on the fact which of the reflection spectra (4, 8 or 12 deg) is used in the calculation. A noticeable increase of calculated absorption coefficients μ in the case of increasing sliding drop angle from 4 to 12 deg is connected with the growth of the depth of radiation penetration in silicon and the corresponding increase of the medium density of the substance in the reflecting near-surface layer. When comparing the absorption spectra the identity of the fine structure and the presence of great differences in the intensity of structure details is observed. Possible reasons for such discrepancy are analyzed. A range of anomalous dispersion of the refractive index is shown to exist in the region of Lsub(2, 3) -edge of absorption (n > 1)

  20. Effect of rapid thermal treatment on optical properties of porous silicon surface doped lithium

    Haddadi, Ikbel, E-mail: haded.ikbel@yahoo.fr; Slema, Sonia Ben; Amor, Sana Ben; Bousbih, Rabaa; Bardaoui, Afrah; Dimassi, Wissem; Ezzaouia, Hatem

    2015-04-15

    In this paper, we have studied the effect of rapid thermal annealing on the optical properties of porous silicon layers doped with lithium (Li/PS). Surface modification of As-deposited Li/PS samples through thermal annealing were investigated by varying the temperature from 100 °C to 800 °C in an infrared (IR) heated belt furnace. A decrease in the reflectivity to about 6% for Li/PS annealed at 200 °C was obtained. From Photoluminescence (PL) spectra, a blue-shift of the gap was observed when the temperature is increased to 800 °C; we correlate these results to the change in chemical composition of the layers in order to find the optimized conditions for a potential application in silicon solar cells. - Highlights: • We have varied the annealing temperature of PS doped with Li. • PL intensity shows significant variation as function of temperature. • We observe reduce of Si–O–Li bands with increasing temperature. • Concurrent with the loss of Li we observe a decrease of the PL.

  1. A radiation tolerant fiber-optic readout system for the LHCb Silicon Tracker

    Agari, M; Blouw, J; Hofmann, W; Knöpfle, K T; Löchner, S; Schmelling, M; Schwingenheuer, B; Pugatch, V; Pylypchenko, Y; Bay, A; Carron, B; Fauland, P; Frei, R; Jiménez-Otero, S; Perrin, A; Tran, M T; Van Hunen, J J; Vervink, K; Vollhardt, A; Voss, H; Adeva, B; Esperante-Pereira, D; Lois, C; Vázquez, P; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Lehner, F; Needham, M; Steinkamp, O; Straumann, U; Volyanskyy, D; Wenger, A

    2005-01-01

    A fiber-optic readout system has been designed for the LHCb Silicon Tracker to transmit the detector data to the counting room at a distance of 120 m from the detectors. In total, data from over 272000 detector channels have to be transmitted at an average trigger frequency of 1.1 MHz. In the design of the system, special attention was given to its radiation tolerance, as the transmitting section is located close to the beamline and therefore is exposed to moderate particle fluences and ionizing dose during the expected operational life of 10 years. We give a general overview of the readout link scheme and present performance data on its reliability and radiation tolerance obtained from first preseries elements of the system. Poster presented on the 10th European Symposium on Semiconductor Detectors, June 12th â€" June 16th 2005, Wildbad Kreuth, Germany.

  2. Optical study of Erbium-doped-porous silicon based planar waveguides

    Najar, A. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France) and Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia)]. E-mail: najar.adel@laposte.net; Ajlani, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France); Lorrain, N. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France); Haesaert, S. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France); Oueslati, M. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Haji, L. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France)

    2007-06-15

    Planar waveguides were formed from porous silicon layers obtained on P{sup +} substrates. These waveguides were then doped by erbium using an electrochemical method. Erbium concentration in the range 2.2-2.5 at% was determined by energy dispersive X-ray (EDX) analysis performed on SEM cross sections. The refractive index of layers was studied before and after doping and thermal treatments. The photoluminescence of Er{sup 3+} ions in the IR range and the decay curve of the 1.53 {mu}m emission peak were studied as a function of the excitation power. The value of excited Er density was equal to 0.07%. Optical loss contributions were analyzed on these waveguides and the losses were equal to 1.1 dB/cm at 1.55 {mu}m after doping.

  3. Er3+ phosphate glass optical waveguide amplifiers at 1.5 μm on silicon

    Yan, Yingchao; Faber, Anne J.; de Waal, Henk

    1996-01-01

    RF-sputtering techniques were employed to produce Er-doped phosphate glass films on thermally oxidized silicon wafers. Film compositions were characterized by X-ray photoelectron spectroscopy. As-deposited films showed very low Er luminescence lifetimes. By postannealing of deposited films in pure oxygen, Er photoluminescence emission lifetime of the 4I13/2 - 4I15/2 transition could be increased from 1 - 2 ms to 8 - 9 ms. The long Er lifetime of the deposited films is very promising for achieving an optical gain. A dependence of measured lifetimes on pump power was observed which are related to a up-conversion quenching process. After postannealing, the sputtered waveguides showed relatively low attenuation loss at the potential pumping and signaling wavelengths. The loss spectrum from 700 nm to 1600 nm was measured by two-prism coupling. The films were easy to be patterned by lithography and ridge channel waveguides were developed by argon plasma etching.

  4. 10 Gb/s operation of photonic crystal silicon optical modulators.

    Nguyen, Hong C; Sakai, Yuya; Shinkawa, Mizuki; Ishikura, Norihiro; Baba, Toshihiko

    2011-07-04

    We report the first experimental demonstration of 10 Gb/s modulation in a photonic crystal silicon optical modulator. The device consists of a 200 μm-long SiO2-clad photonic crystal waveguide, with an embedded p-n junction, incorporated into an asymmetric Mach-Zehnder interferometer. The device is integrated on a SOI chip and fabricated by CMOS-compatible processes. With the bias voltage set at 0 V, we measure a V(π)L pseudo-random bit sequence signal. An open eye pattern is observed at bitrates of 10 Gb/s and 2 Gb/s, with and without pre-emphasis of the drive signal, respectively.

  5. Study of intense pulse irradiation effects on silicon targets considered as ground matter for optical detectors

    Muller, O.

    1994-12-01

    This study aim was centered on morphological and structural alterations induced by laser irradiation on silicon targets considered as ground matter for optical detectors. First we recalled the main high light intensity effects on the condensed matter. Then we presented the experimental aspects. The experimental studies were achieved on two sample types: SiO 2 /Si and Si. Two topics were studied: the defect chronology according to wavelength and pulse length, and the crystalline quality as well as the structure defects of irradiated zones by Raman spectroscopy. Finally, irradiation of Si targets by intense pulsed beams may lead to material fusion. This phenomenon is particularly easy when the material is absorbent, when the pulse is short and when the material is superficially oxidized. (MML). 204 refs., 93 figs., 21 tabs., 1 appendix

  6. High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

    Graham Trevor Reed

    2014-12-01

    Full Text Available This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

  7. Optical and electrical characteristics of zirconium oxide thin films deposited on silicon substrates by spray pyrolysis

    Aguilar-Frutis, M.; Araiza, J.J.; Falcony, C.; Garcia, M.

    2002-01-01

    The optical and electrical characteristics of zirconium oxide thin films deposited by spray pyrolysis on silicon substrates are reported. The films were deposited from a spraying solution of zirconium acetylacetonate in N,N-dimethylformamide using an ultrasonic mist generator on (100) Si substrates. The substrate temperature during deposition was in the range of 400 to 600 grad C. Deposition rates up to 16 A/sec were obtained depending on the spraying solution concentration and on the substrate temperature. A refraction index of the order of 2.0 was measured on these films by ellipsometry. The electrical characteristics of the films were determined from the capacitance and current versus voltage measurements. The addition of water mist during the spraying deposition process was also studied in the characteristics of the films. (Authors)

  8. Porosity and thickness effect of porous silicon layer on photoluminescence spectra

    Husairi, F. S.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

    2018-05-01

    The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon wafer. Porous silicon prepared by using different current density and fix etching time with assistance of halogen lamp. The physical structure of porous silicon measured by the parameters used which know as experimental factor. In this work, we select one of those factors to correlate which optical properties of porous silicon. We investigated the surface morphology by using Surface Profiler (SP) and photoluminescence using Photoluminescence (PL) spectrometer. Different physical characteristics of porous silicon produced when current density varied. Surface profiler used to measure the thickness of porous and the porosity calculated using mass different of silicon. Photoluminescence characteristics of porous silicon depend on their morphology because the size and distribution of pore its self will effect to their exciton energy level. At J=30 mA/cm2 the shorter wavelength produced and it followed the trend of porosity with current density applied.

  9. Preparing the optics technology to observe the hot universe

    Bavdaz, M.; Wille, Eric; Wallace, Kotska

    2014-01-01

    is the Silicon Pore Optics (SPO) [1 to 23], a modular X-ray optics technology, which utilises processes and equipment developed for the semiconductor industry. The paper provides an overview of the programmatic background, the status of SPO technology and gives an outline of the development roadmap...

  10. Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

    Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru [Moscow State University, Faculty of Physics (Russian Federation); Latukhina, N. V.; Chepurnov, V. I. [Samara National Researh University (Russian Federation); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

    2017-03-15

    Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

  11. Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

    Colston, Gerard; Myronov, Maksym

    2017-11-01

    Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

  12. Application of quantum-dot multi-wavelength lasers and silicon photonic ring resonators to data-center optical interconnects

    Beckett, Douglas J. S.; Hickey, Ryan; Logan, Dylan F.; Knights, Andrew P.; Chen, Rong; Cao, Bin; Wheeldon, Jeffery F.

    2018-02-01

    Quantum dot comb sources integrated with silicon photonic ring-resonator filters and modulators enable the realization of optical sub-components and modules for both inter- and intra-data-center applications. Low-noise, multi-wavelength, single-chip, laser sources, PAM4 modulation and direct detection allow a practical, scalable, architecture for applications beyond 400 Gb/s. Multi-wavelength, single-chip light sources are essential for reducing power dissipation, space and cost, while silicon photonic ring resonators offer high-performance with space and power efficiency.

  13. The ATHENA telescope and optics status

    Bavdaz, Marcos; Wille, Eric; Ayre, Mark

    2017-01-01

    chosen for ATHENA is the Silicon Pore Optics (SPO), which hinges on technology spin-in from the semiconductor industry, and uses a modular approach to produce large effective area lightweight telescope optics with a good angular resolution. Both system studies and the technology developments are guided...... by ESA and implemented in industry, with participation of institutional partners. In this paper an overview of the current status of the telescope optics accommodation and technology development activities is provided....

  14. Pt thermal atomic layer deposition for silicon x-ray micropore optics.

    Takeuchi, Kazuma; Ezoe, Yuichiro; Ishikawa, Kumi; Numazawa, Masaki; Terada, Masaru; Ishi, Daiki; Fujitani, Maiko; Sowa, Mark J; Ohashi, Takaya; Mitsuda, Kazuhisa

    2018-04-20

    We fabricated a silicon micropore optic using deep reactive ion etching and coated by Pt with atomic layer deposition (ALD). We confirmed that a metal/metal oxide bilayer of Al 2 O 3 ∼10  nm and Pt ∼20  nm was successfully deposited on the micropores whose width and depth are 20 μm and 300 μm, respectively. An increase of surface roughness of sidewalls of the micropores was observed with a transmission electron microscope and an atomic force microscope. X-ray reflectivity with an Al Kα line at 1.49 keV before and after the deposition was measured and compared to ray-tracing simulations. The surface roughness of the sidewalls was estimated to increase from 1.6±0.2  nm rms to 2.2±0.2  nm rms. This result is consistent with the microscope measurements. Post annealing of the Pt-coated optic at 1000°C for 2 h showed a sign of reduced surface roughness and better angular resolution. To reduce the surface roughness, possible methods such as the annealing after deposition and a plasma-enhanced ALD are discussed.

  15. Qualification of multi-crystalline silicon wafers by optical imaging for industrial use

    Janssen, G.J.M.; Van der Borg, N.J.C.M.; Manshanden, P.; De Bruijne, M.; Bende, E.E. [ECN Solar Energy, Petten (Netherlands)

    2012-09-15

    We have developed a method to qualify multi-crystalline silicon (mc-Si) wafers that are being used in a production process. An optical image of an etched wafer is made. This etching can be a standard industrial acid etching for mc-Si wafers as is commonly used for saw damage removal and simultaneous iso-texturing. Digital image processing is then applied to identify the number of dislocations and their distribution over the wafer. This information is used as input for a cell performance prediction model, where the performance is characterized by the open circuit voltage (Voc) or the efficiency. The model can include various levels of sophistication, i.e. from using an average density of dislocations to the full spatial resolution of the dislocations in a 2D simulation that includes also the metallization pattern on the cell. The predicted performance is then evaluated against pre-selected criteria. The possibility to apply this optical qualification method in an initial stage in the production enables early rejection of the wafers, further tailoring of the cell production process or identification of instabilities in the production process.

  16. Investigation of optical effects in silicon quantum dots by using an empirical pseudopotential method

    Ghoshal, S. K.; Sahar, M. R.; Rohani, M. S. [Universiti Teknologi Malaysia, Johor (Malaysia)

    2011-02-15

    A computer simulation using a pseudopotential approach has been carried out to investigate the band gap as a function of the size and the shape of small silicon (Si) dots having 3 to 44 atoms per dot with and without surface passivation. We used an empirical pseudo-potential Hamiltonian, a plane-wave basis expansion and a basic tetrahedral structure with undistorted local bonding configurations. In our simulation, the structures of the quantum dots were relaxed and optimized before and after passivation. We found that the gap increased more for an oxygenated surface than a hydrogenated one. Thus, both quantum confinement and surface passivation determined the optical and the electronic properties of Si quantum dots. Visible luminescence was probably due to radiative recombination of electrons and holes in the quantum-confined nanostructures. The effect of passivation of the surface dangling bonds by hydrogen and oxygen atoms and the role of surface states on the gap energy was also examined. We investigated the entire energy spectrum starting from the very low-lying ground state to the very high-lying excited states. The results for the sizes of the gap, the density of states, the oscillator strength and the absorption coefficient as functions of the size are presented. The importance of the confinement and the role of surface passivation on the optical effects are also discussed.

  17. Optical spectra of composite silver-porous silicon (Ag-pSi) nanostructure based periodical lattice

    Amedome Min-Dianey, Kossi Aniya; Zhang, Hao-Chun; Brohi, Ali Anwar; Yu, Haiyan; Xia, Xinlin

    2018-03-01

    Numerical finite differential time domain (FDTD) tools were used in this study for predicting the optical characteristics through the nanostructure of composite silver-porous silicon (Ag-pSi) based periodical lattice. This is aimed at providing an interpretation of the optical spectra at known porosity in improvement of the light manipulating efficiency through a proposed structure. With boundary conditions correctly chosen, the numerical simulation was achieved using FDTD Lumerical solutions. This was used to investigate the effect of porosity and the number of layers on the reflection, transmission and absorption characteristics through a proposed structure in a visible wavelength range of 400-750 nm. The results revealed that the higher the number of layers, the lower the reflection. Also, the reflection increases with porosity increase. The transmission characteristics were the inverse to those found in the case of reflection spectra and optimum transmission was attained at high number of layers. Also, increase in porosity results in reduced transmission. Increase in porosity as well as in the number of layers led to an increase in absorption. Therefore, absorption into such structure can be enhanced by elevating the number of layers and the degree of porosity.

  18. Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector.

    Lim, Geunsik; Manzur, Tariq; Kar, Aravinda

    2011-06-10

    An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30  eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21  μm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21  μm wavelength.

  19. Influence of sample oxidation on the nature of optical luminescence from porous silicon

    Coulthard, I.; Antel, W. J. Jr.; Freeland, J. W.; Sham, T. K.; Naftel, S. J.; Zhang, P.

    2000-01-01

    Site-selective luminescence experiments were performed upon porous-silicon samples exposed to varying degrees of oxidation. The source of different luminescence bands was determined to be due to either quantum confinement in nanocrystalline silicon or defective silicon oxide. Of particular interest is the defective silicon-oxide luminescence band found at 2.1 eV, which was found to frequently overlap with a luminescence band from nanocrystalline silicon. Some of the historical confusion and debate with regards to the source of luminescence from porous silicon can be attributed to this overlap. (c) 2000 American Institute of Physics

  20. Silicon-Nitride-based Integrated Optofluidic Biochemical Sensors using a Coupled-Resonator Optical Waveguide

    Jiawei eWANG

    2015-04-01

    Full Text Available Silicon nitride (SiN is a promising material platform for integrating photonic components and microfluidic channels on a chip for label-free, optical biochemical sensing applications in the visible to near-infrared wavelengths. The chip-scale SiN-based optofluidic sensors can be compact due to a relatively high refractive index contrast between SiN and the fluidic medium, and low-cost due to the complementary metal-oxide-semiconductor (CMOS-compatible fabrication process. Here, we demonstrate SiN-based integrated optofluidic biochemical sensors using a coupled-resonator optical waveguide (CROW in the visible wavelengths. The working principle is based on imaging in the far field the out-of-plane elastic-light-scattering patterns of the CROW sensor at a fixed probe wavelength. We correlate the imaged pattern with reference patterns at the CROW eigenstates. Our sensing algorithm maps the correlation coefficients of the imaged pattern with a library of calibrated correlation coefficients to extract a minute change in the cladding refractive index. Given a calibrated CROW, our sensing mechanism in the spatial domain only requires a fixed-wavelength laser in the visible wavelengths as a light source, with the probe wavelength located within the CROW transmission band, and a silicon digital charge-coupled device (CCD / CMOS camera for recording the light scattering patterns. This is in sharp contrast with the conventional optical microcavity-based sensing methods that impose a strict requirement of spectral alignment with a high-quality cavity resonance using a wavelength-tunable laser. Our experimental results using a SiN CROW sensor with eight coupled microrings in the 680nm wavelength reveal a cladding refractive index change of ~1.3 × 10^-4 refractive index unit (RIU, with an average sensitivity of ~281 ± 271 RIU-1 and a noise-equivalent detection limit (NEDL of 1.8 ×10^-8 RIU ~ 1.0 ×10^-4 RIU across the CROW bandwidth of ~1 nm.

  1. Porous silicon-VO{sub 2} based hybrids as possible optical temperature sensor: Wavelength-dependent optical switching from visible to near-infrared range

    Antunez, E. E.; Salazar-Kuri, U.; Estevez, J. O.; Basurto, M. A.; Agarwal, V., E-mail: vagarwal@uaem.mx [Centro de Investigación en Ingeniería y Ciencias Aplicadas, Instituto de Investigación en Ciencias Básicas y Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Mor. 62209 (Mexico); Campos, J. [Instituto de Energías Renovables, UNAM, Priv. Xochicalco S/N, Temixco, Mor. 62580 (Mexico); Jiménez Sandoval, S. [Laboratorio de Investigación en Materiales, Centro de Investigación y estudios Avanzados del Instituto Politécnico Nacional, Unidad Querétaro, Qro. 76001 (Mexico)

    2015-10-07

    Morphological properties of thermochromic VO{sub 2}—porous silicon based hybrids reveal the growth of well-crystalized nanometer-scale features of VO{sub 2} as compared with typical submicron granular structure obtained in thin films deposited on flat substrates. Structural characterization performed as a function of temperature via grazing incidence X-ray diffraction and micro-Raman demonstrate reversible semiconductor-metal transition of the hybrid, changing from a low-temperature monoclinic VO{sub 2}(M) to a high-temperature tetragonal rutile VO{sub 2}(R) crystalline structure, coupled with a decrease in phase transition temperature. Effective optical response studied in terms of red/blue shift of the reflectance spectra results in a wavelength-dependent optical switching with temperature. As compared to VO{sub 2} film over crystalline silicon substrate, the hybrid structure is found to demonstrate up to 3-fold increase in the change of reflectivity with temperature, an enlarged hysteresis loop and a wider operational window for its potential application as an optical temperature sensor. Such silicon based hybrids represent an exciting class of functional materials to display thermally triggered optical switching culminated by the characteristics of each of the constituent blocks as well as device compatibility with standard integrated circuit technology.

  2. Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties

    Iori, Federico; Degoli, Elena; Luppi, Eleonora; Magri, Rita; Marri, Ivan; Cantele, G.; Ninno, D.; Trani, F.; Ossicini, Stefano

    2006-01-01

    There are experimental evidences that doping control at the nanoscale can significantly modify the optical properties with respect to the pure systems. This is the case of silicon nanocrystals (Si-nc), for which it has been shown that the photoluminescence (PL) peak can be tuned also below the bulk Si band gap by properly controlling the impurities, for example by boron (B) and phosphorus (P) codoping. In this work, we report on an ab initio study of impurity states in Si-nc. We consider B and P substitutional impurities for Si-nc with a diameter up to 2.2 nm. Formation energies (FEs), electronic, optical and structural properties have been determined as a function of the cluster dimension. For both B-doped and P-doped Si-nc the FE increases on decreasing the dimension, showing that the substitutional doping gets progressively more difficult for the smaller nanocrystals. Moreover, subsurface impurity positions result to be the most stable ones. The codoping reduces the FE strongly favoring this process with respect to the simple n-doping or p-doping. Such an effect can be attributed to charge compensation between the donor and the acceptor atoms. Moreover, smaller structural deformations, with respect to n-doped and p-doped cases, localized only around the impurity sites are observed. The band gap and the optical threshold are largely reduced with respect to the undoped Si-nc showing the possibility of an impurity-based engineering of the Si-nc PL properties

  3. Sub-aquatic response of a scintillator, fibre optic and silicon photomultiplier based radiation sensor

    Jackson, Sarah F., E-mail: s.f.jackson@lancaster.ac.uk [Engineering Department, Lancaster University, Lancaster (United Kingdom); Monk, Stephen D., E-mail: s.monk@lancaster.ac.uk [Engineering Department, Lancaster University, Lancaster (United Kingdom); Stanley, Steven J., E-mail: steven.j.stanley@nnl.co.uk [National Nuclear Laboratory, A709 Springfields, Preston (United Kingdom); Lennox, Kathryn, E-mail: kathryn.lennox@nnl.co.uk [National Nuclear Laboratory, A709 Springfields, Preston (United Kingdom)

    2014-07-01

    We describe an attempt at the utilisation of two low level light sensors to improve on the design of a dose monitoring system, specifically for underwater applications with consideration for the effects of water attenuation. The gamma radiation ‘RadLine{sup ®}’ detector consists of an inorganic scintillating crystal coupled to a fibre optic cable which transports scintillation photons, up to hundreds of metres, to an optical sensor. Analysed here are two contemporary technologies; SensL's MiniSL a silicon photomultiplier (SiPM) and a Sens-Tech photon counting photomultiplier tube (PMT). A clinical radiotherapy linear accelerator (linac) is implemented as test beam, subjecting the RadLine{sup ®} to a highly controlled dose rate (ranging from 0 Sv h{sup −1} to 320 Sv h{sup −1}), averaging at 2 MeV in energy. The RadLine's underwater dose monitoring capabilities are tested with the aid of epoxy resin ‘solid water’ phantom blocks, used as a substitute for water. Our results show that the MiniSL SiPM is unsuitable for this application due to extremely high background noise levels, however the Sens-Tech PMT performs satisfactorily and the detected dose rate due to the effects of water attenuation compares strongly with MCNP simulation data and NIST database values. We conclude that the PMT shows promise for its ultimate use in the First Generation Magnox Storage Pond (FGMSP) on the Sellafield site. - Highlights: • RadLine{sup ®} consists of a scintillating crystal coupled to a fibre optic cable and photon detector. • Here the dose monitoring system is trialled with SiPM and PMT type photon detectors. • A clinical linear accelerator (linac) is used as a test beam. • Sub-aquatic response is compared to Monte Carlo simulations and the NIST database.

  4. Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix

    Hao, X.J.; Cho, E.-C.; Scardera, G.; Bellet-Amalric, E.; Bellet, D.; Shen, Y.S.; Huang, S.; Huang, Y.D.; Conibeer, G.; Green, M.A.

    2009-01-01

    Promise of Si nanocrystals highly depends on tailoring their behaviour through doping. Phosphorus-doped silicon nanocrystals embedded in a silicon dioxide matrix have been realized by a co-sputtering process. The effects of phosphorus-doping on the properties of Si nanocrystals are investigated. Phosphorus diffuses from P-P and/or P-Si to P-O upon high temperature annealing. The dominant X-ray photoelectron spectroscopy P 2p signal attributable to Si-P and/or P-P (130 eV) at 1100 o C indicates that the phosphorus may exist inside Si nanocrystals. It is found that existence of phosphorus enhances phase separation of silicon rich oxide and thereby Si crystallization. In addition, phosphorus has a considerable effect on the optical absorption and photoluminescence properties as a function of annealing temperature.

  5. Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching

    P. Heydari

    2014-10-01

    Full Text Available In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE was carried out with silver catalyst. Provided solution (or materiel in combination with laser interference lithography (LIL fabricated different reproducible pillars, holes and rhomboidal structures. As a result, Submicron patterning of porous areas and nanohole arrays on Si substrate with a minimum feature size of 600nm was achieved. Measured reflection spectra of the samples present different optical characteristics which is dependent on the shape, thickness of metal catalyst and periodicity of the structure. These structures can be designed to reach a photonic bandgap in special range or antireflection layer in energy harvesting applications. The resulted reflection spectra of applied method are comparable to conventional expensive and complicated dry etching techniques.

  6. Measurement of low molecular weight silicon AMC to protect UV optics in photo-lithography environments

    Lobert, Jürgen M.; Miller, Charles M.; Grayfer, Anatoly; Tivin, Anne M.

    2009-03-01

    A new analytical method for semiconductor-specific applications is presented for the accurate measurement of low molecular weight, silicon-containing, organic compounds TMS, HMDSO and D3. Low molecular weight / low boiling point silicon-containing compounds are not captured for extended periods of time by traditional chemical filters but have the same potential to degrade exposure tool optical surfaces as their high molecular weight counterparts. Likewise, we show that capturing these compounds on sample traps that are commonly used for organic AMC analysis does not work for various reasons. Using the analytical method described here, TMS, HMDSO and D3 can be measured artifact-free, with at least a 50:1 peak-to-noise ratio at the method detection limit, determined through the Hubaux-Vos method and satisfying a conservative 99% statistical confidence. Method detection limits for the compounds are 1-6 ppt in air. We present calibration curve, capacity, capture efficiency, break-through and repeatability data to demonstrate robustness of method. Seventy-one real-world samples from 26 projects taken in several fab environments show that TMS is found in concentrations 100 times higher than those of HMDSO and D3. All compounds are found in all environments in concentrations ranging from zero to 12 ppm, but most concentrations were below 50 ppb. All compounds are noticeably higher in litho-bays than in sub-fabs and we found all three compounds inside of two exposure tools, suggesting cleanroom and/or tool-internal contamination sources.

  7. Optical pulling and pushing forces exerted on silicon nanospheres with strong coherent interaction between electric and magnetic resonances.

    Liu, Hongfeng; Panmai, Mingcheng; Peng, Yuanyuan; Lan, Sheng

    2017-05-29

    We investigated theoretically and numerically the optical pulling and pushing forces acting on silicon (Si) nanospheres (NSs) with strong coherent interaction between electric and magnetic resonances. We examined the optical pulling and pushing forces exerted on Si NSs by two interfering waves and revealed the underlying physical mechanism from the viewpoint of electric- and magnetic-dipole manipulation. As compared with a polystyrene (PS) NS, it was found that the optical pulling force for a Si NS with the same size is enlarged by nearly two orders of magnitude. In addition to the optical pulling force appearing at the long-wavelength side of the magnetic dipole resonance, very large optical pushing force is observed at the magnetic quadrupole resonance. The correlation between the optical pulling/pushing force and the directional scattering characterized by the ratio of the forward to backward scattering was revealed. More interestingly, it was found that the high-order electric and magnetic resonances in large Si NSs play an important role in producing optical pulling force which can be generated by not only s-polarized wave but also p-polarized one. Our finding indicates that the strong coherent interaction between the electric and magnetic resonances existing in nanoparticles with large refractive indices can be exploited to manipulate the optical force acting on them and the correlation between the optical force and the directional scattering can be used as guidance. The engineering and manipulation of optical forces will find potential applications in the trapping, transport and sorting of nanoparticles.

  8. Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles

    Timerkaeva, Dilyara; Attaccalite, Claudio; Brenet, Gilles; Caliste, Damien; Pochet, Pascal

    2018-04-01

    The structure of the CiCs complex in silicon has long been the subject of debate. Numerous theoretical and experimental studies have attempted to shed light on the properties of these defects that are at the origin of the light emitting G-center. These defects are relevant for applications in lasing, and it would be advantageous to control their formation and concentration in bulk silicon. It is therefore essential to understand their structural and electronic properties. In this paper, we present the structural, electronic, and optical properties of four possible configurations of the CiCs complex in bulk silicon, namely, the A-, B-, C-, and D-forms. The configurations were studied by density functional theory and many-body perturbation theory. Our results suggest that the C-form was misinterpreted as a B-form in some experiments. Our optical investigation also tends to exclude any contribution of A- and B-forms to light emission. Taken together, our results suggest that the C-form could play an important role in heavily carbon-doped silicon.

  9. Design and modelling of a silicon optical MEMS switch controlled by magnetic field generated by a plain coil

    Golebiowski, J; Milcarz, Sz

    2014-01-01

    Optical switches can be made as a silicon cantilever with a magnetic layer. Such a structure is placed in a magnetic field of a planar coil. There is a torque deflecting the silicon beam with NiFe layer depending on a flux density of the magnetic field. The study shows an analysis of ferromagnetic layer parameters, beam's dimensions on optical switch characteristics. Different constructions of the beams were simulated for a range of values of magnetic field strength from 100 to 1000 A/m. An influence of the actuators parameters on characteristics was analysed. The loss of stiffness of the beam caused by specific constructions effected in displacements reaching 85 nm. Comsol Multiphysics 4.3b was used for the simulations.

  10. High-speed 2 × 2 silicon-based electro-optic switch with nanosecond switch time

    Xue-Jun, Xu; Shao-Wu, Chen; Hai-Hua, Xu; Yang, Sun; Yu-De, Yu; Jin-Zhong, Yu; Qi-Ming, Wang

    2009-01-01

    A 2 × 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach–Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1 mm in length and cross-section of 400 nm×340 nm. The measurement results show that the switch has a V π L π figure of merit of 0.145 V·cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and −28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated

  11. Optical and electronic properties of HWCVD and PECVD silicon films irradiated using excimer and Nd:Yag lasers

    Shaikh, M.Z.; O'Neill, K.A.; Anthony, S.; Persheyev, S.K.; Rose, M.J.

    2006-01-01

    Thin silicon film samples were deposited using HWCVD and PECVD techniques to study the influence of laser annealing on their optical and electronic properties. Samples were annealed in air using a XeCl excimer and Nd:Yag lasers. Excimer laser annealing (ELA) at 50 to 222 mJ/cm 2 increased conductivity in PECVD films by 2 to 3 orders of magnitude and in HWCVD films by 1 to 2 orders of magnitude. ELA was also seen to decrease the optical gap in PECVD films by 0.5 eV and HWCVD films by 0.15 eV. Silicon-oxygen bond content was higher in as-deposited HWCVD films than PECVD films. Hydrogen content (at.%) in PECVD films was higher than HWCVD for higher H dilution ratios. A Nd:Yag laser 3-beam interference pattern was used to produce a periodic array of crystals in both PECVD and HWCVD films

  12. Optical microcavities based on surface modes in two-dimensional photonic crystals and silicon-on-insulator photonic crystals

    Xiao, Sanshui; Qiu, M.

    2007-01-01

    Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor is gr...... is gradually enhanced and the resonant frequency converges to that of the corresponding surface mode in the photonic crystals. These structures have potential applications such as sensing.......Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor...

  13. CH(3)NH(3)PbI(3) perovskite / silicon tandem solar cells: characterization based optical simulations.

    Filipič, Miha; Löper, Philipp; Niesen, Bjoern; De Wolf, Stefaan; Krč, Janez; Ballif, Christophe; Topič, Marko

    2015-04-06

    In this study we analyze and discuss the optical properties of various tandem architectures: mechanically stacked (four-terminal) and monolithically integrated (two-terminal) tandem devices, consisting of a methyl ammonium lead triiodide (CH(3)NH(3)PbI(3)) perovskite top solar cell and a crystalline silicon bottom solar cell. We provide layer thickness optimization guidelines and give estimates of the maximum tandem efficiencies based on state-of-the-art sub cells. We use experimental complex refractive index spectra for all involved materials as input data for an in-house developed optical simulator CROWM. Our characterization based simulations forecast that with optimized layer thicknesses the four-terminal configuration enables efficiencies over 30%, well above the current single-junction crystalline silicon cell record of 25.6%. Efficiencies over 30% can also be achieved with a two-terminal monolithic integration of the sub-cells, combined with proper selection of layer thicknesses.

  14. Optical and vibrational properties of sulfur and selenium versus halogens in hydrogenated amorphous silicon matrix

    Al-Alawi, S.M.; Al-Dallal, S.

    1999-01-01

    The infrared spectra of a compositional variation series of alpha-Si,S:H; alpha-Si,Se:H, alpha-Si:Cl, H and alpha-Si:F,H thin films were deposited by r.f. glow discharge were compared. It was shown that S, Se, Cl and F can be bonded to the silicon matrix. The stretching mode bands at 2000 cm/sup -1/. and 2100 cm/sup -1/ in the infrared spectra of the above alloys shifts systematically to higher wave numbers when incorporated S,Se or halogen atoms are increases. This observation was attributed to the larger electronegativity of these atoms with respect to the host matrix. Optical transmission spectroscopy and photothermal deflection experiments reveal an increase in the band gap when the content of any of the above elements is increased. However, the highest band gap was obtained for sulfur alloys. This result was interpreted in terms of the S-Si bond strength as compared to other elements. It was found that alpha-Si, S:H was interpreted in terms of the S-Si alloys exhibit the highest structural stability among the four alloys for moderate amount of incorporated sulfur atoms. (author)

  15. Physical and optical characterisation of carbon-silicon layers produced by rapid thermal chemical vapour deposition

    McBride, G.M.

    1994-04-01

    The Quplas II reactor is a novel chemical vapour deposition (CVD) system, which was recently designed and built at The Queen's University of Belfast. The system was intended to produce layers of Silicon (Si) for application in advanced bipolar transistor manufacture. It became clear that the system was capable of depositing novel materials such as Silicon-Carbon (Si-C) films which could have application as the emitter material in heterojunction bipolar transistors (HBT's) formed on silicon substrates. This work focuses mainly on the development of analytical techniques to allow characterisation of the deposited layers of Si-C and permit optimisation of both the process conditions and the deposition system. The techniques that were developed to characterise the Si-C films in terms of their physical and optical properties included: Secondary Ion Mass Spectroscopy (SIMS), X-Ray Diffractometry (XRD), Transmission and Scanning Electron Microscopy (TEM and SEM), Near Infrared (NIR) and Ultraviolet/Visible/Near Infrared (UV/VIS/NIR) Spectroscopy. From assessing the data obtained from the analysis of the samples using the techniques mentioned above, it was possible to characterise the Si-C films in terms of: stoichiometry, crystallinity, degree of oxygen contamination, thickness, optical roughness of the film/air and film/substrate interfaces, and energy bandgap. In the fabrication of Si-C films it was found to be necessary to use low process pressures in order to ensure that the film deposition was slow enough to allow for a more ordered growth process. This led to the formation of polycrystalline Si-C films which had greatly reduced levels of oxygen compared to earlier amorphous films. In addition the polycrystalline Si-C films tended to have optically rough film/air and film/substrate interfaces. For most samples it was possible to obtain the thickness of their Si-C films from their SIMS profiles. Based on the method of interferometry, the thickness of the Si-C films

  16. Photonic molecules for improving the optical response of macroporous silicon photonic crystals for gas sensing purposes.

    Cardador, D; Segura, D; Rodríguez, A

    2018-02-19

    In this paper, we report the benefits of working with photonic molecules in macroporous silicon photonic crystals. In particular, we theoretically and experimentally demonstrate that the optical properties of a resonant peak produced by a single photonic atom of 2.6 µm wide can be sequentially improved if a second and a third cavity of the same length are introduced in the structure. As a consequence of that, the base of the peak is reduced from 500 nm to 100 nm, while its amplitude remains constant, increasing its Q-factor from its initial value of 25 up to 175. In addition, the bandgap is enlarged almost twice and the noise within it is mostly eliminated. In this study we also provide a way of reducing the amplitude of one or two peaks, depending whether we are in the two- or three-cavity case, by modifying the length of the involved photonic molecules so that the remainder can be used to measure gas by spectroscopic methods.

  17. Carrier dynamics in silicon nanowires studied using optical-pump terahertz-probe spectroscopy

    Beaudoin, Alexandre; Salem, Bassem; Baron, Thierry; Gentile, Pascal; Morris, Denis

    2014-03-01

    The advance of non-contact measurements involving pulsed terahertz radiation presents great interests for characterizing electrical properties of a large ensemble of nanowires. In this work, N-doped and undoped silicon nanowires (SiNWs) grown by chemical vapour deposition (CVD) on quartz substrate were characterized using optical-pump terahertz probe (OPTP) transmission experiments. Our results show that defects and ionized impurities introduced by N-doping the CVD-grown SiNWs tend to reduce the photoexcited carrier lifetime and degrade their conductivity properties. Capture mechanisms by the surface trap states play a key role on the photocarrier dynamics in theses small diameters' (~100 nm) SiNWs and the doping level is found to alter this dynamics. We propose convincing capture and recombination scenarios that explain our OPTP measurements. Fits of our photoconductivity data curves, from 0.5 to 2 THz, using a Drude-plasmon conductivity model allow determining photocarrier mobility values of 190 and 70 cm2/V .s, for the undoped and N-doped NWs samples, respectively.

  18. Simulated human eye retina adaptive optics imaging system based on a liquid crystal on silicon device

    Jiang Baoguang; Cao Zhaoliang; Mu Quanquan; Hu Lifa; Li Chao; Xuan Li

    2008-01-01

    In order to obtain a clear image of the retina of model eye, an adaptive optics system used to correct the wave-front error is introduced in this paper. The spatial light modulator that we use here is a liquid crystal on a silicon device instead of a conversional deformable mirror. A paper with carbon granule is used to simulate the retina of human eye. The pupil size of the model eye is adjustable (3-7 mm). A Shack–Hartman wave-front sensor is used to detect the wave-front aberration. With this construction, a value of peak-to-valley is achieved to be 0.086 λ, where λ is wavelength. The modulation transfer functions before and after corrections are compared. And the resolution of this system after correction (691p/m) is very close to the dirraction limit resolution. The carbon granule on the white paper which has a size of 4.7 μm is seen clearly. The size of the retina cell is between 4 and 10 mu;m. So this system has an ability to image the human eye's retina. (classical areas of phenomenology)

  19. Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes

    Madsen, Steen; Bozhevolnyi, Sergey I.; Birkelund, Karen

    1997-01-01

    Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous silicon using uncoated fiber probes display a three-peak profile after etching in potassium...... hydroxide. Numerical simulations of the electromagnetic field around the probe-sample interaction region are used to explain the experimental observations. With an aluminum-coated fiber probe, lines of 35 nm in width were transferred into the amorphous silicon layer. (C) 1997 American Institute of Physics....

  20. Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

    Konstantinos Pantzas

    2015-10-01

    Full Text Available Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si surfaces and nanostructured ones, using Silicon on Isolator (SOI or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

  1. Effect of oxygen and hydrogen on the optical and electrical characteristics of porous silicon. Towards sensor applications

    Green, S.

    2000-02-01

    The effect of adsorbed oxygen and hydrogen gas on porous silicon has been investigated using two different techniques, viz. optical and electrical. The photoluminescence quenching by oxygen and hydrogen was found to be reversible with a response time of the order of 3000 s. Unlike any reported porous silicon gas quenching systems, both the extent and rate of quenching were found to be a function of photoluminescence wavelength. The quenching is attributed to charge transfer from the conduction band of porous silicon to the lowest unoccupied molecular orbital of oxygen and hydrogen, respectively. Surface conductance measurements (aluminium contacts) show that the principal charge transfer process is via tunnelling, with some conduction through the underlying bulk p-type silicon layer. Symmetrical current-voltage plots were obtained for this system which were attributed to pinning of the aluminium-porous silicon Fermi level at mid-gap by the high surface trap density. An approximate doubling of the aluminium electrode separation was found to reduce approximately fourfold the initial rate of increase in surface conductance on adsorption of oxygen at a pressure of 10 torr. To the best of the author's knowledge this is the first time that such an effect has been reported in a room temperature solid state gas sensor. Gas sensitivity measurements using surface contacts show a logarithmic response to the concentration of oxygen up to a pressure of 100 torr with a rapid response, of 300 s. A 39% increase in surface conductance occurs on exposure of the device to 100 torr of oxygen. The surface conductance of the device decreases by 34% on exposure to one atmosphere of hydrogen with a response time of the order 2000 s. Transverse conductance (DC) measurements show that Au/PS/p-Si/Al..Ag devices behave like a field-dependent diode. An admittance spectroscopy technique has been applied to porous silicon for the first time to calculate g 0 , the trap density at the Fermi level

  2. Illuminating the future of silicon photonics: optical coupling of carbon nanotubes to microrings

    Kato, Y K

    2015-01-01

    Advances in carbon nanotube material quality and processing techniques have led to an increased interest in nanotube photonics. In particular, emission in the telecommunication wavelengths makes nanotubes compatible with silicon photonics. Noury et al (2014 Nanotechnology 25 215201) have reported on carbon nanotube photoluminescence coupled to silicon microring resonators, underscoring the advantage of combining carbon nanotube emitters with silicon photonics. Their results open up the possibility of using nanotubes in other waveguide-based devices, taking advantage of well-established technologies. (viewpoint)

  3. Design and fabrication of ultrathin silicon-nitride membranes for use in UV-visible airgap-based MEMS optical filters

    Ghaderi, Mohammadamir; Wolffenbuttel, Reinoud F.

    2016-01-01

    MEMS-based airgap optical filters are composed of quarter-wave thick high-index dielectric membranes that are separated by airgaps. The main challenge in the fabrication of these filters is the intertwined optical and mechanical requirements. The thickness of the layers decreases with design wavelength, which makes the optical performance in the UV more susceptible to fabrication tolerances, such as thickness and composition of the deposited layers, while the ability to sustain a certain level of residual stress by the structural strength becomes more critical. Silicon-nitride has a comparatively high Young's modulus and good optical properties, which makes it a suitable candidate as the membrane material. However, both the mechanical and optical properties in a silicon-nitride film strongly depend on the specifics of the deposition process. A design trade-off is required between the mechanical strength and the index of refraction, by tuning the silicon content in the silicon-nitride film. However, also the benefit of a high index of refraction in a silicon-rich film should be weighed against the increased UV optical absorption. This work presents the design, fabrication, and preliminary characterization of one and three quarter-wave thick silicon-nitride membranes with a one-quarter airgap and designed to give a spectral reflectance at 400 nm. The PECVD silicon-nitride layers were initially characterized, and the data was used for the optical and mechanical design of the airgap filters. A CMOS compatible process based on polysilicon sacrificial layers was used for the fabrication of the membranes. Optical characterization results are presented. (paper)

  4. Optical Evaluation of the Rear Contacts of Crystalline Silicon Solar Cells by Coupled Electromagnetic and Statistical Ray-Optics Modeling

    Dabirian, Ali; Morales-Masis, Monica; Haug, Franz-Josef; De Wolf, Stefaan; Ballif, Christophe

    2017-01-01

    High-efficiency crystalline silicon (c-Si) solar cells increasingly feature sophisticated electron and hole contacts aimed at minimizing electronic losses. At the rear of photovoltaic devices, such contacts—usually consisting of stacks of functional

  5. Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

    Zhang, Xingyu; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chakravarty, Swapnajit; Chen, Ray T.

    2015-01-01

    We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 μs, and a fall time of 18.5 μs. The measured on-chip loss on the transmission band is as low as 1 dB

  6. Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

    Palacios-Huerta, L.; Aceves-Mijares, M. [Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México (Mexico); Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, NL 66628, México (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona (Spain)

    2016-07-18

    Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

  7. Growth and optical properties of CMOS-compatible silicon nanowires for photonic devices

    Guichard, Alex Richard

    Silicon (Si) is the dominant semiconductor material in both the microelectronic and photovoltaic industries. Despite its poor optical properties, Si is simply too abundant and useful to be completely abandoned in either industry. Since the initial discovery of efficient room temperature photoluminescence (PL) from porous Si and the following discoveries of PL and time-resolved optical gain from Si nanocrystals (Si-nc) in SiO2, many groups have studied the feasibility of making Si-based, CMOS-compatible electroluminescent devices and electrically pumped lasers. These studies have shown that for Si-ne sizes below about 10 nm, PL can be attributed to radiative recombination of confined excitons and quantum efficiencies can reach 90%. PL peak energies are blue-shifted from the bulk Si band edge of 1.1 eV due to the quantum confinement effect and PL decay lifetimes are on mus timescales. However, many unanswered questions still exist about both the ease of carrier injection and various non-radiative and loss mechanisms that are present. A potential alternative material system to porous Si and Si-nc is Si nanowires (SiNWs). In this thesis, I examine the optical properties of SiNWs with diameters in the range of 3-30 nm fabricated by a number of compound metal oxide semiconductor (CMOS) compatible fabrication techniques including Chemical Vapor Deposition on metal nanoparticle coated substrates, catalytic wet etching of bulk Si and top-down electron-beam lithographic patterning. Using thermal oxidation and etching, we can increase the degree of confinement in the SiNWs. I demonstrate PL peaked in the visible and near-infrared (NIR) wavelength ranges that is tunable by controlling the crystalline SiNW core diameter, which is measured with dark field and high-resolution transmission electron microscopy. PL decay lifetimes of the SiNWs are on the order of 50 mus after proper surface passivation, which suggest that the PL is indeed from confined carriers in the SiNW cores

  8. Silicon as a virtual plasmonic material: Acquisition of its transient optical constants and the ultrafast surface plasmon-polariton excitation

    Danilov, P. A.; Ionin, A. A.; Kudryashov, S. I., E-mail: sikudr@sci.lebedev.ru; Makarov, S. V.; Rudenko, A. A. [Lebedev Physical Institute (Russian Federation); Saltuganov, P. N. [Moscow Institute of Physics and Technology (State University) (Russian Federation); Seleznev, L. V.; Yurovskikh, V. I.; Zayarny, D. A. [Lebedev Physical Institute (Russian Federation); Apostolova, T. [Bulgarian Academy of Sciences, Institute for Nuclear Research and Nuclear Energetics (Bulgaria)

    2015-06-15

    Ultrafast intense photoexcitation of a silicon surface is complementarily studied experimentally and theoretically, with its prompt optical dielectric function obtained by means of time-resolved optical reflection microscopy and the underlying electron-hole plasma dynamics modeled numerically, using a quantum kinetic approach. The corresponding transient surface plasmon-polariton (SPP) dispersion curves of the photo-excited material were simulated as a function of the electron-hole plasma density, using the derived optical dielectric function model, and directly mapped at several laser photon energies, measuring spatial periods of the corresponding SPP-mediated surface relief nanogratings. The unusual spectral dynamics of the surface plasmon resonance, initially increasing with the increase in the electron-hole plasma density but damped at high interband absorption losses induced by the high-density electron-hole plasma through instantaneous bandgap renormalization, was envisioned through the multi-color mapping.

  9. Data Transmission and Thermo-Optic Tuning Performance of Dielectric-Loaded Plasmonic Structures Hetero-Integrated on a Silicon Chip

    Giannoulis, G.; Kalavrouziotis, D.; Apostolopoulos, D.

    2012-01-01

    We demonstrate experimental evidence of the data capture and the low-energy thermo-optic tuning credentials of dielectric-loaded plasmonic structures integrated on a silicon chip. We show 7-nm thermo-optical tuning of a plasmonic racetrack-resonator with less than 3.3 mW required electrical power...

  10. Wannier–Stark electro-optical effect, quasi-guided and photonic modes in 2D macroporous silicon structures with SiO_2 coatings

    Karachevtseva, L.; Goltviansky, Yu.; Sapelnikova, O.; Lytvynenko, O.; Stronska, O.; Bo, Wang; Kartel, M.

    2016-01-01

    Highlights: • The IR absorption spectra of oxidized macroporous silicon were studied. • The Wannier–Stark electro-optical effect on Si-SiO_2 boundary was confirmed. • An additional electric field of quasi-guided optical modes was evaluated. • The photonic modes and band gaps were measured as peculiarities in absorption spectra. - Abstract: Opportunities to enhance the properties of structured surfaces were demonstrated on 2D macroporous silicon structures with SiO_2 coatings. We investigated the IR light absorption oscillations in macroporous silicon structures with SiO2 coatings 0–800 nm thick. The Wannier–Stark electro-optical effect due to strong electric field on Si-SiO_2boundary and an additional electric field of quasi-guided optical modes were taken into account. The photonic modes and band gaps were also considered as peculiarities in absorbance spectra of macroporous silicon structures with a thick SiO_2 coating. The photonic modes do not coincide with the quasi-guided modes in the silicon matrix and do not appear in absorption spectra of 2D macroporous silicon structures with surface nanocrystals.

  11. Silicon nitride nanosieve membrane

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  12. Simultaneous optical and electrical modeling of plasmonic light trapping in thin-film amorphous silicon photovoltaic devices

    Gandhi, Keyur K.; Nejim, Ahmed; Beliatis, Michail J.; Mills, Christopher A.; Henley, Simon J.; Silva, S. Ravi P.

    2015-01-01

    Rapid prototyping of photovoltaic (PV) cells requires a method for the simultaneous simulation of the optical and electrical characteristics of the device. The development of nanomaterial-enabled PV cells only increases the complexity of such simulations. Here, we use a commercial technology computer aided design (TCAD) software, Silvaco Atlas, to design and model plasmonic gold nanoparticles integrated in optoelectronic device models of thin-film amorphous silicon (a-Si:H) PV cells. Upon illumination with incident light, we simulate the optical and electrical properties of the cell simultaneously and use the simulation to produce current-voltage (J-V) and external quantum efficiency plots. Light trapping due to light scattering and localized surface plasmon resonance interactions by the nanoparticles has resulted in the enhancement of both the optical and electrical properties due to the reduction in the recombination rates in the photoactive layer. We show that the device performance of the modeled plasmonic a-Si:H PV cells depends significantly on the position and size of the gold nanoparticles, which leads to improvements either in optical properties only, or in both optical and electrical properties. The model provides a route to optimize the device architecture by simultaneously optimizing the optical and electrical characteristics, which leads to a detailed understanding of plasmonic PV cells from a design perspective and offers an advanced tool for rapid device prototyping.

  13. Semiconductor nanostructures on silicon. Carrier dynamics, optical amplification and lasing; Halbleiternanostrukturen auf Silizium. Ladungstraegerdynamik, optischer Verstaerker und Laser

    Lange, Christoph

    2008-12-11

    Two material systems that can be grown epitaxially on a silicon substrate are experimentally investigated with respect to their optical properties. Quantum wells (qw) of Germanium were experimentally investigated by spectrally resolved white-light pump-probe-absorption spectroscopy at room temperature. A second material class is Ga(NAsP), which was grown as quantum wells on a silicon substrate matching the lattice constant of the substrate. The basic optical properties were determined using the variable stripe-length method. In order to relate the results to those of established materials, a selection of comparable III/V semiconductors were measured in the same setups. The pump-probe measurements on (GaIn)As quantum wells exhibited a much more rapid scattering. In these material systems, quite similar optical gain values of 10{sup -3}/QW were found with decay times of several 100 ps. For (GaIn)(NAs), slightly higher values were determined. Using the variable stripe-length method, GaSb quantum wells with dot-like morphology were investigated. (orig.)

  14. Investigation on nonlinear optical properties of MoS2 nanoflakes grown on silicon and quartz substrates

    Bayesteh, Samaneh; Zahra Mortazavi, Seyedeh; Reyhani, Ali

    2018-05-01

    In this study, MoS2 nanoflakes were directly grown on different substrates—Si/SiO2 and quartz—by one-step thermal chemical vapor deposition using MoO3 and sulfide powders as precursors. Scanning electron microscopy and x-ray diffraction patterns demonstrated the formation of MoS2 structures on both substrates. Moreover, UV-visible and photoluminescence analysis confirmed the formation of MoS2 few-layer structures. According to Raman spectroscopy, by assessment of the line width and frequency shift differences between the and A 1g, it was inferred that the MoS2 grown on the silicon substrate was monolayer and that grown on the quartz substrate was multilayer. In addition, open-aperture and close-aperture Z-scan techniques were employed to study the nonlinear optical properties including nonlinear absorption and nonlinear refraction of the grown MoS2. All experiments were performed using a diode laser with a wavelength of 532 nm as the light source. It is noticeable that both samples demonstrate obvious self-defocusing behavior. The monolayer MoS2 grown on the silicon substrate displayed considerable two-photon absorption while, the multilayer MoS2 synthesized on the quartz exhibited saturable absorption. In general, few-layered MoS2 would be useful for the development of nanophotonic devices like optical limiters, optical switchers, etc.

  15. Broadband dielectric spectroscopy of oxidized porous silicon

    Axelrod, Ekaterina; Urbach, Benayahu; Sa'ar, Amir; Feldman, Yuri

    2006-01-01

    Dielectric measurements accompanied by infrared absorption and photoluminescence (PL) spectroscopy were used to investigate the electrical and optical properties of oxidized porous silicon (PS). As opposed to non-oxidized PS, only high temperature relaxation processes could be resolved for oxidized PS. Two relaxation processes have been observed. The first process is related to dc-conductivity that dominates at high temperatures and low frequencies. After subtraction of dc-conductivity we could analyse a second high-temperature relaxation process that is related to interface polarization induced by charge carriers trapped at the host matrix-pore interfaces. We found that, while the main effect of the oxidation on the PL appears to be a size reduction in the silicon nanocrystals that gives rise to a blue shift of the PL spectrum, its main contribution to the dielectric properties turns out to be blocking of transport channels in the host tissue and activation of hopping conductivity between silicon nanocrystals

  16. Broadband dielectric spectroscopy of oxidized porous silicon

    Axelrod, Ekaterina [Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Urbach, Benayahu [Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Sa' ar, Amir [Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Feldman, Yuri [Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel)

    2006-04-07

    Dielectric measurements accompanied by infrared absorption and photoluminescence (PL) spectroscopy were used to investigate the electrical and optical properties of oxidized porous silicon (PS). As opposed to non-oxidized PS, only high temperature relaxation processes could be resolved for oxidized PS. Two relaxation processes have been observed. The first process is related to dc-conductivity that dominates at high temperatures and low frequencies. After subtraction of dc-conductivity we could analyse a second high-temperature relaxation process that is related to interface polarization induced by charge carriers trapped at the host matrix-pore interfaces. We found that, while the main effect of the oxidation on the PL appears to be a size reduction in the silicon nanocrystals that gives rise to a blue shift of the PL spectrum, its main contribution to the dielectric properties turns out to be blocking of transport channels in the host tissue and activation of hopping conductivity between silicon nanocrystals.

  17. Synthesis of highly integrated optical network based on microdisk-resonator add-drop filters in silicon-on-insulator technology

    Kaźmierczak, Andrzej; Dortu, Fabian; Giannone, Domenico; Bogaerts, Wim; Drouard, Emmanuel; Rojo-Romeo, Pedro; Gaffiot, Frederic

    2009-10-01

    We analyze a highly compact optical add-drop filter topology based on a pair of microdisk resonators and a bus waveguide intersection. The filter is further assessed on an integrated optical 4×4 network for optical on-chip communication. The proposed network structure, as compact as 50×50 μm, is fabricated in a CMOS-compatible process on a silicon-on-insulator (SOI) substrate. Finally, the experimental results demonstrate the proper operation of the fabricated devices.

  18. Study of optical absorbance in porous silicon nanowires for photovoltaic applications

    Charrier, Joë l; Najar, Adel; Pirasteh, Parastesh

    2013-01-01

    Porous silicon nanowires (PSiNWs) layers fabrication was reported. Reflectance spectra were measured as a function of the nanowire length and were inferior to 0.1% and a strong photoluminescence (PL) signal was measured from samples. Models based

  19. The Affordable Pre-Finishing of Silicon Carbide for Optical Applications, Phase I

    National Aeronautics and Space Administration — Creare proposes to develop a novel, laser-assisted, pre-finishing process for chemical vapor deposition (CVD) coated silicon-carbide ceramics. Our innovation will...

  20. Silicon switch development for optical pulse generation in fusion lasers at Lawrence Livermore National Laboratory

    Wilcox, R.B.

    1983-01-01

    We have been developing a silicon photoconductive switch for use as a Pockels cell driver in the pulse generation systems of the fusion lasers Nova and Novette. The objective has been to make 10 kV switches repeatably and which are reliable on an operating system. We found that nonlinear phenomena in nearly intrinsic silicon caused excessive conduction at high voltage resulting in breakdown. Our experiments with doped material show that this problem can be eliminated, resulting in useful devices

  1. Improving optical properties of silicon nitride films to be applied in the middle infrared optics by a combined high-power impulse/unbalanced magnetron sputtering deposition technique.

    Liao, Bo-Huei; Hsiao, Chien-Nan

    2014-02-01

    Silicon nitride films are prepared by a combined high-power impulse/unbalanced magnetron sputtering (HIPIMS/UBMS) deposition technique. Different unbalance coefficients and pulse on/off ratios are applied to improve the optical properties of the silicon nitride films. The refractive indices of the Si3N4 films vary from 2.17 to 2.02 in the wavelength ranges of 400-700 nm, and all the extinction coefficients are smaller than 1×10(-4). The Fourier transform infrared spectroscopy and x-ray diffractometry measurements reveal the amorphous structure of the Si3N4 films with extremely low hydrogen content and very low absorption between the near IR and middle IR ranges. Compared to other deposition techniques, Si3N4 films deposited by the combined HIPIMS/UBMS deposition technique possess the highest refractive index, the lowest extinction coefficient, and excellent structural properties. Finally a four-layer coating is deposited on both sides of a silicon substrate. The average transmittance from 3200 to 4800 nm is 99.0%, and the highest transmittance is 99.97% around 4200 nm.

  2. Towards spectral-domain optical coherence tomography on a silicon chip

    Akça, B.I.; Worhoff, Kerstin; Nguyen, V.D.; Kalkman, J.; van Leeuwen, Ton; de Ridder, R.M.; Pollnau, Markus

    Optical coherence tomography (OCT) is a widely used optical imaging technology, particularly in the medical field, since it can provide non-invasive, sub-micrometer resolution diagnostic images of tissue. Current OCT systems contain optical fibers and free-space optical components which make these

  3. Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

    Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios; Shervin, Shahab

    2017-01-01

    Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400–600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3–6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude–Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ∼0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor. (paper)

  4. Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

    Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Shervin, Shahab; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

    2017-01-01

    Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400-600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3-6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude-Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ~0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor.

  5. Value of optical coherence tomography in the detection of macular pathology before the removal of silicone oil

    Rashad MA

    2016-01-01

    Full Text Available Mohammad Ahmad Rashad, Ahmed Abdel Aliem Mohamed, Asmaa Ismail Ahmed Department of Ophthalmology, Faculty of Medicine, Ain Shams University, Cairo, Egypt Purpose: To assess the pathological macular changes with optical coherence tomography (OCT before the removal of silicone oil (SiO in eyes that had undergone pars plana vitrectomy for complicated forms of retinal detachment (RD.Patients and methods: Subjects included 48 patients (51 eyes with complicated RD including proliferative vitreoretinopathy, proliferative diabetic retinopathy, recurrent RD, penetrating trauma, uveitis, giant retinal tears, and macular holes. All the eyes had undergone SiO injection. Furthermore, all eyes had been planned for the removal of SiO 6–12 months after the primary surgery. Finally, all eyes had a fundus examination and OCT examination before the silicone oil removal.Results: OCT findings indicated epiretinal membrane in 41% of the eyes, macular edema in 17%, macular detachment in 13.5%, macular thinning in 13.5%, macular holes in 10%, and subretinal membranes in 2%. Preoperative OCT was normal in only 12% of the eyes, while a clinical fundus examination was normal in 43% (P<0.001. Eyes with normal OCT had significantly better mean logMAR (0.35 than eyes with pathological changes detected through OCT (1.28; P<0.001. Surgical modifications were made during the removal of SiO in 74.5% of the eyes.Conclusion: OCT detected significantly more pathological changes than a clinical fundus examination. This had an impact on both surgical step modification during the removal of SiO and predictability of visual outcome after the removal of SiO. Keywords: optical coherence tomography, silicone oil, pars plana vitrectomy, proliferative vitreoretinopathy, proliferative diabetic retinopathy

  6. An all-silicone zoom lens in an optical imaging system

    Zhao, Cun-Hua

    2013-09-01

    An all-silicone zoom lens is fabricated. A tunable metal ringer is fettered around the side edge of the lens. A nylon rope linking a motor is tied, encircling the notch in the metal ringer. While the motor is operating, the rope can shrink or release to change the focal length of the lens. A calculation method is developed to obtain the focal length and the zoom ratio. The testing is carried out in succession. The testing values are compared with the calculated ones, and they tally with each other well. Finally, the imaging performance of the all-silicone lens is demonstrated. The all-silicone lens has potential uses in cellphone cameras, notebook cameras, micro monitor lenses, etc.

  7. Cascadability of Silicon Microring Resonators for40-Gbit/s OOK and DPSK Optical Signals

    Ozolins, Oskars; An, Yi; Lali-Dastjerdi, Zohreh

    2012-01-01

    The cascadability of a single silicon micro-ring resonator for CSRZ-OOK and CSRZ-DPSK signals is experimentally demonstrated at 40 Gbit/s for the first time. Error-free performance is obtained for both modulation formats after 5 cascaded resonators.......The cascadability of a single silicon micro-ring resonator for CSRZ-OOK and CSRZ-DPSK signals is experimentally demonstrated at 40 Gbit/s for the first time. Error-free performance is obtained for both modulation formats after 5 cascaded resonators....

  8. Silicon dioxide etching process for fabrication of micro-optics employing pulse-modulated electron-beam-excited plasma

    Takeda, Keigo; Ohta, Takayuki; Ito, Masafumi; Hori, Masaru

    2006-01-01

    Silicon dioxide etching process employing a pulse-modulated electron-beam-excited plasma (EBEP) has been developed for a fabrication process of optical micro-electro-mechanical systems (MEMSs). Nonplanar dielectric materials were etched by using self-bias induced by the electron beam generating the plasma. In order to investigate the effect of pulse modulation on electron beam, plasma diagnostics were carried out in the EBEP employing C 4 F 8 gas diluted with Ar gas by using a Langmuir single probe and time resolved optical emission spectroscopy. It was found that the pulse-modulated EBEP has an excellent potential to reduce the plasma-induced thermal damage on a photoresist film on a substrate to get the uniform etching and the anisotropic SiO 2 etching in comparison with the conventional EBEP. The pulse-modulated EBEP enabled us to get the high etch rate of SiO 2 of 375 nm/min without any additional bias power supply. Furthermore, the microfabrication on the core area of optical fiber was realized. These results indicate that the pulse-modulated EBEP will be a powerful tool for the application to optical MEMS process

  9. Processing development for ceramic structural components: the influence of a presintering of silicon on the final properties of reaction bonded silicon nitride. Final technical report

    1982-03-01

    The influence of a presintering of silicon on the final properties of reaction bonded silicon nitride has been studied using scanning electron and optical microscopy, x-ray diffraction analysis, 4 pt. bend test, and mecury intrusion porosimetry. It has been shown that presintering at 1050/sup 0/C will not affect the final nitrided properties. At 1200/sup 0/C, the oxide layer is removed, promoting the formation of B-phase silicon nitride. Presintering at 1200/sup 0/C also results in compact weight loss due to the volatilization of silicon, and the formation of large pores which severely reduce nitrided strength. The development of the structure of sintered silicon compacts appears to involve a temperature gradient, with greater sintering observed near the surface.

  10. Miniaturized flow cytometer with 3D hydrodynamic particle focusing and integrated optical elements applying silicon photodiodes

    Rosenauer, M.; Buchegger, W.; Finoulst, I.; Verhaert, P.D.E.M.; Vellekoop, M.

    2010-01-01

    In this study, the design, realization and measurement results of a novel optofluidic system capable of performing absorbance-based flow cytometric analysis is presented. This miniaturized laboratory platform, fabricated using SU-8 on a silicon substrate, comprises integrated polymer-based

  11. Structural and optical properties of ZnO films grown on silicon and ...

    TECS

    Abstract. Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon .... voluted O1 s and (c) typical Zr 3d spectra of ZrO2/ZnO/Si film. .... strate doping concentration (NB) of ≈ 2⋅5 × 1015 cm–3 is.

  12. Morphological and optical properties of n-type porous silicon: effect ...

    Method of PS fabrication is by photo-assisted electrochemical etching with different etching current densities ... Observation of room temperature visible photoluminescence (PL) [4,5] in PS has ... are pre-treated with HF and ethanol in an ultrasonic bath for 5 min to remove any native oxide present on the silicon surface [16].

  13. Membrane InP saturable absorbers on silicon as building blocks for transparent optical networks

    Raz, O.; Tassaert, M.; Roelkens, G.C.; Dorren, H.J.S.

    2013-01-01

    As silicon photonics continues to gain research and industrial relevance, some of the building blocks in this technology such as modulators and switches still suffer from limitation when it comes to insertion losses and/or extinction ratio. In the past two years we have been investigating a

  14. Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

    Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

    1999-01-01

    Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

  15. The European BOOM project :silicon photonics for high-capacity optical packet routers

    Stampoulidis, L.; Vyrsokinos, K.; Voigt, K.; Zimmermann, L.; Gomez-Agis, F.; Dorren, H.J.S.; Sheng, Z.; Thourhout, Van D.; Moerl, L.; Kreissl, J.; Sedighi, B.; Scheytt, J.C.; Pagano, A.; Riccardi, E.

    2010-01-01

    During the past years, monolithic integration in InP has been the driving force for the realization of integrated photonic routing systems. The advent of silicon as a basis for cost-effective integration and its potential blend with III–V material is now opening exciting opportunities for the

  16. Optical properties and bioavailability of dissolved organic matter along a flow-path continuum from soil pore waters to the Kolyma River, Siberia

    Frey, K. E.; Sobczak, W. V.; Mann, P. J.; Holmes, R. M.

    2015-08-01

    The Kolyma River in Northeast Siberia is among the six largest arctic rivers and drains a region underlain by vast deposits of Holocene-aged peat and Pleistocene-aged loess known as yedoma, most of which is currently stored in ice-rich permafrost throughout the region. These peat and yedoma deposits are important sources of dissolved organic matter (DOM) to inland waters that in turn play a significant role in the transport and ultimate remineralization of organic carbon to CO2 and CH4 along the terrestrial flow-path continuum. The turnover and fate of terrigenous DOM during offshore transport will largely depend upon the composition and amount of carbon released to inland and coastal waters. Here, we measured the optical properties of chromophoric DOM (CDOM) from a geographically extensive collection of waters spanning soil pore waters, streams, rivers, and the Kolyma River mainstem throughout a ∼ 250 km transect of the northern Kolyma River basin. During the period of study, CDOM absorbance values were found to be robust proxies for the concentration of DOM, whereas additional CDOM parameters such as spectral slopes (S) were found to be useful indicators of DOM quality along the flow-path. In particular, CDOM absorption at 254 nm showed a strong relationship with dissolved organic carbon (DOC) concentrations across all water types (r2 = 0.958, p CDOM demonstrated statistically significant differences between all four water types and tracked changes in the concentration of bioavailable DOC, suggesting that this parameter may be suitable for clearly discriminating shifts in organic matter characteristics among water types along the full flow-path continuum across this landscape. The heterogeneity of environmental characteristics and extensive continuous permafrost of the Kolyma River basin combine to make this a critical region to investigate and monitor. With ongoing and future permafrost degradation, peat and yedoma deposits throughout the Northeast Siberian

  17. Optical properties and bioavailability of dissolved organic matter along a flow-path continuum from soil pore waters to the Kolyma River mainstem, East Siberia

    Frey, Karen E.; Sobczak, William V.; Mann, Paul J.; Holmes, Robert M.

    2016-04-01

    The Kolyma River in northeast Siberia is among the six largest Arctic rivers and drains a region underlain by vast deposits of Holocene-aged peat and Pleistocene-aged loess known as yedoma, most of which is currently stored in ice-rich permafrost throughout the region. These peat and yedoma deposits are important sources of dissolved organic matter (DOM) to inland waters that in turn play a significant role in the transport and ultimate remineralization of organic carbon to CO2 and CH4 along the terrestrial flow-path continuum. The turnover and fate of terrigenous DOM during offshore transport largely depends upon the composition and amount of carbon released to inland and coastal waters. Here, we measured the ultraviolet-visible optical properties of chromophoric DOM (CDOM) from a geographically extensive collection of waters spanning soil pore waters, streams, rivers, and the Kolyma River mainstem throughout a ˜ 250 km transect of the northern Kolyma River basin. During the period of study, CDOM absorption coefficients were found to be robust proxies for the concentration of DOM, whereas additional CDOM parameters such as spectral slopes (S) were found to be useful indicators of DOM quality along the flow path. In particular, the spectral slope ratio (SR) of CDOM demonstrated statistically significant differences between all four water types and tracked changes in the concentration of bioavailable DOC, suggesting that this parameter may be suitable for clearly discriminating shifts in organic matter characteristics among water types along the full flow-path continuum across this landscape. However, despite our observations of downstream shifts in DOM composition, we found a relatively constant proportion of DOC that was bioavailable ( ˜ 3-6 % of total DOC) regardless of relative water residence time along the flow path. This may be a consequence of two potential scenarios allowing for continual processing of organic material within the system, namely (a

  18. Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

    Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

    2013-03-25

    n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.

  19. Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.

    Lee, Kwang Jae; Chun, Jaeyi; Kim, Sang-Jo; Oh, Semi; Ha, Chang-Soo; Park, Jung-Won; Lee, Seung-Jae; Song, Jae-Chul; Baek, Jong Hyeob; Park, Seong-Ju

    2016-03-07

    We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.

  20. Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography.

    Van Elburg, Devin J; Noble, Scott D; Hagey, Simone; Goertzen, Andrew L

    2018-02-26

    Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials ('100MP', 'A100', and 'GPA') were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude degradation

  1. Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography

    Van Elburg, Devin J.; Noble, Scott D.; Hagey, Simone; Goertzen, Andrew L.

    2018-03-01

    Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials (‘100MP’, ‘A100’, and ‘GPA’) were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude

  2. Optical Waveform Sampling and Error-Free Demultiplexing of 1.28 Tb/s Serial Data in a Nanoengineered Silicon Waveguide

    Ji, Hua; Pu, Minhao; Hu, Hao

    2011-01-01

    This paper presents the experimental demonstrations of using a pure nanoengineered silicon waveguide for 1.28 Tb/s serial data optical waveform sampling and 1.28 Tb/s–10 Gb/s error free demultiplexing. The 330-fs pulses are resolved in each 780-fs time slot in waveform sampling. Error...

  3. Gain bandwidth of 80 nm and 2 dB/cm peak gain in Al2O3:Er3+ optical amplifiers on silicon

    Bradley, J.; Agazzi, L.; Geskus, D.; Ay, F.; Worhoff, Kerstin; Pollnau, Markus

    Erbium-doped aluminum oxide integrated optical amplifiers were fabricated on silicon substrates, and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm−3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the

  4. Modeling optical transmissivity of graphene grate in on-chip silicon photonic device

    Amiri, Iraj S.; Ariannejad, M. M.; Jalil, M. A.; Ali, J.; Yupapin, P.

    2018-06-01

    A three-dimensional (3-D) finite-difference-time-domain (FDTD) analysis was used to simulate a silicon photonic waveguide. We have calculated power and transmission of the graphene used as single or multilayers to study the light transmission behavior. A new technique has been developed to define the straight silicon waveguide integrated with grate graphene layer. The waveguide has a variable grate spacing to be filled by the graphene layer. The number of graphene atomic layers varies between 100 and 1000 (or 380 nm and 3800 nm), the transmitted power obtained varies as ∼30% and ∼80%. The ∼99%, blocking of the light was occurred in 10,000 (or 38,000 nm) atomic layers of the graphene grate.

  5. Optical spectroscopy of vacancy related defects in silicon carbide generated by proton irradiation

    Kasper, C.; Sperlich, A.; Simin, D.; Astakhov, G.V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Kraus, H. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Makino, T.; Sato, S.I.; Ohshima, T. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Dyakonov, V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); ZAE Bayern, Wuerzburg (Germany)

    2016-07-01

    Defects in silicon carbide (SiC) received growing attention in recent years, because they are promising candidates for spin based quantum information processing. In this study we examine silicon vacancies in 4H-SiC crystals generated by proton irradiation. By the use of confocal microscopy the implantation depth of Si vacancies for varying proton energies can be verified. An important issue is to ascertain the nature and distribution of the defects. For this purpose, we use the characteristic photoluminescence spectrum of Si vacancies, whose intensity is proportional to the defect density. Using xyz-scans, where the photoluminescence at each mapping point is recorded, one can thus determine the vacancies nature and their distribution in the SiC crystal. Additionally we verify the nature of the examined defects by measuring their uniquely defined zero-field-splitting by using ODMR associated with defect spins.

  6. Effect of deposition and annealing conditions on the optical properties of amorphous silicon

    Mashin, A.I.; Ershov, A.V.; Khokhlov, D.A.

    1998-01-01

    The spectral characteristics of the refractive index and the extinction coefficient in the range 0.6-2.0 eV for amorphous silicon films prepared by electron-beam evaporation with variation of the substrate temperature, deposition rate, and annealing temperature in air are presented. The results obtained are discussed on the basis of the changes in the Penn gap energy as a function of the indicated preparation and treatment conditions

  7. Optical biosensor based on a silicon nanowire ridge waveguide for lab on chip applications

    Gamal, Rania; Ismail, Yehea; Swillam, Mohamed A

    2015-01-01

    We propose a novel sensor using a silicon nanowire ridge waveguide (SNRW). This waveguide is comprised of an array of silicon nanowires on an insulator substrate that has the envelope of a ridge waveguide. The SNRW inherently maximizes the overlap between the material-under-test and the incident light wave by introducing voids to the otherwise bulk structure. When a sensing sample is injected, the voids within the SNRW adopt the refractive index of the material-under-test. Hence, the strong contribution of the material-under-test to the overall modal effective index will greatly augment the sensitivity. Additionally, the ridge structure provides a fabrication convenience as it covers the entire substrate, ensuring that the etching process would not damage the substrate. Finite-difference time-domain simulations are conducted and showed that the percentage change in the effective index due to a 1% change in the surrounding environment is more than 170 times the change perceived in an evanescent-detection based bulk silicon ridge waveguide. Moreover, the SNRW proves to be more sensitive than recent other, non-evanescent sensors. In addition, the detection limit for this structure was revealed to be as small as 10 −8 . A compact bimodal waveguide based on SNRW is designed and tested. It delivers high sensitivity values that offer comparable performance to similar low-index light-guiding sensing configurations; however, our proposed structure has much smaller footprints and allows high dense integration for lab-on-chip applications. (paper)

  8. Optimized optical devices for edge-coupling-enabled silicon photonics platform

    Png, Ching Eng; Ang, Thomas Y. L.; Ong, Jun Rong; Lim, Soon Thor; Sahin, Ezgi; Chen, G. F. R.; Tan, D. T. H.; Guo, Tina X.; Wang, Hong

    2018-02-01

    We present a library of high-performance passive and active silicon photonic devices at the C-band that is specifically designed and optimized for edge-coupling-enabled silicon photonics platform. These devices meet the broadband (100 nm), low-loss (= 25 Gb/s), and polarization diversity requirements (TE and TM polarization extinction ratio beam splitters (PBSs), and high-speed modulators are some of the devices within our library. In particular, we have designed and fabricated inverse taper fiber-to-waveguide edge couplers of tip widths ranging from 120 nm to 200 nm, and we obtained a low coupling loss of 1.80+/-0.28 dB for 160 nm tip width. To achieve polarization diversity operation for inverse tapers, we have experimentally realized different designs of polarization beam splitters (PBS). Our optimized PBS has a measured extinction ratio of <= 25 dB for both the quasiTE modes, and quasi-TM modes. Additionally, a broadband (100 nm) directional coupler with a 50/50 power splitting ratio was experimentally realized on a small footprint of 20×3 μm2 . Last but not least, high-speed silicon modulators with a range of carrier doping concentrations and offset of the PN junction can be used to optimise the modulation efficiency, and insertion losses for operation at 25 GHz.

  9. III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

    Kunert, B.; Guo, W.; Mols, Y.; Pantouvaki, M.; Van Campenhout, J.; Langer, R.; Barla, K. [imec, Kapeldreef 75, 3001 Heverlee (Belgium); Tian, B.; Wang, Z.; Shi, Y.; Van Thourhout, D. [Photonics Research Group, Ghent University, Technologiepark-Zwijnaarde 15, 9052 Gent (Belgium)

    2016-08-29

    We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

  10. Structural, thermal and optical behavior of 84 MeV oxygen and 120 MeV silicon ions irradiated PES

    Samra, Kawaljeet Singh; Thakur, Sonika; Singh, Lakhwant

    2011-01-01

    In order to study structural, thermal and optical behavior, thin flat samples of polyethersulfone were irradiated with oxygen and silicon ions. The changes in properties were analyzed using different techniques viz: X-ray diffraction, thermo-gravimetric analysis, Fourier transform infrared, UV-visible and photoluminescence spectroscopy. A noticeable increase in the intensity of X-ray diffraction peaks was observed after irradiation with 84 MeV oxygen ions at low and medium fluences, which may be attributed to radiation-induced cross-linking in polymer. Fourier transform infrared and thermo-gravimetric analysis corroborated the results of X-ray diffraction analysis. No noticeable change in the Fourier transform infrared spectra of oxygen ion irradiated polyethersulfone were observed even at the highest fluence of 1 x 10 13 ions cm -2 , but after irradiation with silicon ions, a reduction in intensity of almost all characteristic bands was revealed. An increase in the activation energy of decomposition of polyethersulfone was observed after irradiation with 84 MeV oxygen ions up to medium fluences but degradation was revealed at higher fluences. Similar trends were observed by photoluminescence analysis.

  11. Single-particle properties of N = 12 to N = 20 silicon isotopes within the dispersive optical model

    Bespalova, O. V.; Ermakova, T. A.; Klimochkina, A. A.; Spasskaya, T. I.

    2017-09-01

    Experimental neutron and proton single-particle energies in N = 12 to N = 20 silicon isotopes and data on neutron and proton scattering by nuclei of the isotope 28Si are analyzed on the basis of the dispersive optical model. Good agreement with available experimental data was attained. The occupation probabilities calculated for the single-particle states in question suggest a parallel-type filling of the 1 d and 2 s 1/2 neutron states in the isotopes 26,28,30,32,34Si. The single-particle spectra being considered are indicative of the closure of the Z = 14 proton subshell in the isotopes 30,32,34Si and the N = 20 neutron shell.

  12. A multimodal optical and electrochemical device for monitoring surface reactions: redox active surfaces in porous silicon Rugate filters.

    Ciampi, Simone; Guan, Bin; Darwish, Nadim A; Zhu, Ying; Reece, Peter J; Gooding, J Justin

    2012-12-21

    Herein, mesoporous silicon (PSi) is configured as a single sensing device that has dual readouts; as a photonic crystal sensor in a Rugate filter configuration, and as a high surface area porous electrode. The as-prepared PSi is chemically modified to provide it with stability in aqueous media and to allow for the subsequent coupling of chemical species, such as via Cu(I)-catalyzed cycloaddition reactions between 1-alkynes and azides ("click" reactions). The utility of the bimodal capabilities of the PSi sensor for monitoring surface coupling procedures is demonstrated by the covalent coupling of a ferrocene derivative, as well as by demonstrating ligand-exchange reactions (LER) at the PSi surface. Both types of reactions were monitored through optical reflectivity measurements, as well as electrochemically via the oxidation/reduction of the surface tethered redox species.

  13. 70 nm resolution in subsurface optical imaging of silicon integrated-circuits using pupil-function engineering

    Serrels, K. A.; Ramsay, E.; Reid, D. T.

    2009-02-01

    We present experimental evidence for the resolution-enhancing effect of an annular pupil-plane aperture when performing nonlinear imaging in the vectorial-focusing regime through manipulation of the focal spot geometry. By acquiring two-photon optical beam-induced current images of a silicon integrated-circuit using solid-immersion-lens microscopy at 1550 nm we achieved 70 nm resolution. This result demonstrates a reduction in the minimum effective focal spot diameter of 36%. In addition, the annular-aperture-induced extension of the depth-of-focus causes an observable decrease in the depth contrast of the resulting image and we explain the origins of this using a simulation of the imaging process.

  14. Investigation of phase matching for third-harmonic generation in silicon slow light photonic crystal waveguides using Fourier optics.

    Monat, Christelle; Grillet, Christian; Corcoran, Bill; Moss, David J; Eggleton, Benjamin J; White, Thomas P; Krauss, Thomas F

    2010-03-29

    Using Fourier optics, we retrieve the wavevector dependence of the third-harmonic (green) light generated in a slow light silicon photonic crystal waveguide. We show that quasi-phase matching between the third-harmonic signal and the fundamental mode is provided in this geometry by coupling to the continuum of radiation modes above the light line. This process sustains third-harmonic generation with a relatively high efficiency and a substantial bandwidth limited only by the slow light window of the fundamental mode. The results give us insights into the physics of this nonlinear process in the presence of strong absorption and dispersion at visible wavelengths where bandstructure calculations are problematic. Since the characteristics (e.g. angular pattern) of the third-harmonic light primarily depend on the fundamental mode dispersion, they could be readily engineered.

  15. All-optical membrane inp switch on silicon for access applications

    Raz, O.; Tassaert, M.; Roelkens, G.C.; Dorren, H.J.S.

    2012-01-01

    Using an integrated membrane switch on SOI, optical clock distribution is achieved while all-optical switching of datapackets is maintained. Transmission through 25km SMF is demonstrated with 1.5dB penalty, limited by signal OSNR and pump extinction.

  16. Comparison of microrings and microdisks for high-speed optical modulation in silicon photonics

    Ying, Zhoufeng; Wang, Zheng; Zhao, Zheng; Dhar, Shounak; Pan, David Z.; Soref, Richard; Chen, Ray T.

    2018-03-01

    The past several decades have witnessed the gradual transition from electrical to optical interconnects, ranging from long-haul telecommunication to chip-to-chip interconnects. As one type of key component in integrated optical interconnect and high-performance computing, optical modulators have been well developed these past few years, including ultrahigh-speed microring and microdisk modulators. In this paper, a comparison between microring and microdisk modulators is well analyzed in terms of dimensions, static and dynamic power consumption, and fabrication tolerance. The results show that microdisks have advantages over microrings in these aspects, which gives instructions to the chip design of high-density integrated systems for optical interconnects and optical computing.

  17. Optimization of PAM-4 transmitters based on lumped silicon photonic MZMs for high-speed short-reach optical links.

    Zhou, Shiyu; Wu, Hsin-Ta; Sadeghipour, Khosrov; Scarcella, Carmelo; Eason, Cormac; Rensing, Marc; Power, Mark J; Antony, Cleitus; O'Brien, Peter; Townsend, Paul D; Ossieur, Peter

    2017-02-20

    We demonstrate how to optimize the performance of PAM-4 transmitters based on lumped Silicon Photonic Mach-Zehnder Modulators (MZMs) for short-reach optical links. Firstly, we analyze the trade-off that occurs between extinction ratio and modulation loss when driving an MZM with a voltage swing less than the MZM's Vπ. This is important when driver circuits are realized in deep submicron CMOS process nodes. Next, a driving scheme based upon a switched capacitor approach is proposed to maximize the achievable bandwidth of the combined lumped MZM and CMOS driver chip. This scheme allows the use of lumped MZM for high speed optical links with reduced RF driver power consumption compared to the conventional approach of driving MZMs (with transmission line based electrodes) with a power amplifier. This is critical for upcoming short-reach link standards such as 400Gb/s 802.3 Ethernet. The driver chip was fabricated using a 65nm CMOS technology and flip-chipped on top of the Silicon Photonic chip (fabricated using IMEC's ISIPP25G technology) that contains the MZM. Open eyes with 4dB extinction ratio for a 36Gb/s (18Gbaud) PAM-4 signal are experimentally demonstrated. The electronic driver chip has a core area of only 0.11mm2 and consumes 236mW from 1.2V and 2.4V supply voltages. This corresponds to an energy efficiency of 6.55pJ/bit including Gray encoder and retiming, or 5.37pJ/bit for the driver circuit only.

  18. Structural, optical and electrical properties of silicon nanocrystals embedded in SixC1−x/SiC multilayer systems for photovoltaic applications

    López-Vidrier, J.; Hernández, S.; Samà, J.; Canino, M.; Allegrezza, M.; Bellettato, M.; Shukla, R.; Schnabel, M.; Löper, P.; López-Conesa, L.; Estradé, S.; Peiró, F.; Janz, S.; Garrido, B.

    2013-01-01

    Highlights: ► We study the structural, optical and electrical properties of Si x C 1−x /SiC multilayers with different Si excess. ► Multilayer structure is destroyed after annealing at 1100 °C. ► Energy filtered TEM confirmed the Si NC formation. ► Sample thickness values from optical simulations are in agreement with TEM observations. ► The crystallization degree of the NCs was evaluated by Raman scattering and R and T techniques. ► The system conductivity depends on the NC size. ► The presence of a defective oxycarbide layer on top did not allow for obtaining useful electrical information. -- Abstract: In this work we present a structural, optical and electrical characterization of Si x C 1−x /SiC multilayer systems with different silicon content. After the deposition process, an annealing treatment was carried out in order to induce the silicon nanocrystals formation. By means of energy-filtered transmission electron microscopy (EFTEM) we observed the structural morphology of the multilayers and the presence of crystallized silicon nanoprecipitates for samples annealed up to 1100 °C. We discuss the suitability of optical techniques such as Raman scattering and reflectance and transmittance (R and T) for the evaluation of the crystalline fraction of our samples at different silicon excess ranges. In addition, the combination of R and T measurements with simulation has proved to be a useful instrument to confirm the structural properties observed by EFTEM. Finally, we explore the origin of the extremely high current density revealed by electrical measurements, probably due to the presence of an undesired defective SiC y O z ternary compound layer, already supported by the structural and optical results. Nevertheless, the variation of the electrical measurements with the silicon amount indicates a small but significant contribution from the multilayers

  19. Improved optical properties and detectivity of an uncooled silicon carbide mid-wave infrared optical detector with increased dopant concentration

    Lim, Geunsik; Kar, Aravinda; Manzur, Tariq

    2012-01-01

    An n-type 4H-SiC substrate is doped with gallium using a laser doping technique and its optical response is investigated at the mid-wave infrared (MWIR) wavelength 4.21 μm as a function of the dopant concentration. The dopant creates a p-type energy level of 0.3 eV, which is the energy of a photon corresponding to the MWIR wavelength 4.21 μm. Therefore, Ga-doped SiC can be used as an uncooled MWIR detector because an optical signal was obtained at this wavelength when the sample was at room temperature. The energy level of the Ga dopant in the substrate was confirmed by optical absorption spectroscopy. Secondary ion mass spectroscopy (SIMS) of the doped samples revealed an enhancement in the solid solubility of Ga in the substrate when doping is carried out by increasing the number of laser scans. A higher dopant concentration increases the number of holes in the dopant energy level, enabling photoexcitation of more electrons from the valence band by the incident MWIR photons. The detector performance improves as the dopant concentration increases from 1.15 × 10 19 to 6.25 × 10 20 cm −3 . The detectivity of the optical photodetector is found to be 1.07 × 10 10 cm Hz 1/2 W −1 for the case of doping with four laser passes. (paper)

  20. All-Optical Nanoscale Thermometry using Silicon-Vacancy Centers in Diamond

    Nguyen, Christian; Evans, Ruffin; Sipahigil, Alp; Bhaskar, Mihir; Sukachev, Denis; Lukin, Mikhail

    2017-04-01

    Accurate thermometry at the nanoscale is a difficult challenge, but building such a thermometer would be a powerful tool for discovering and understanding new processes in biology, chemistry and physics. Applications include cell-selective treatment of disease, engineering of more efficient integrated circuits, or even the development of new chemical and biological reactions. In this work, we study how the bulk properties of the Silicon Vacancy center (SiV) in diamond depend on temperature, and use them to measure temperature with 100mK accuracy. Using SiVs in 200 nm nanodiamonds, we measure the temperature with 100 nm spatial resolution over a 10 μm area.

  1. Optical properties of organic-silicon photonic crystal nanoslot cavity light source

    Ming-Jay Yang

    2017-03-01

    Full Text Available We theoretically study a dielectric photonic crystal nanoslot cavity immersed in an organic fluid containing near-infrared dyes by means of a full rate equation model including the complete cavity QED effects. Based on the modeling results, we numerically design an organic-silicon cavity light source in which its mode volume, quality factor, and far-field emission pattern are optimized for energy-efficient, high-speed applications. Dye quantum efficiency improved by two orders of magnitude and 3dB modulation bandwidth of a few hundred GHz can be obtained.

  2. Tapered silicon core fibers with nano-spikes for optical coupling via spliced silica fibers

    Ren, Haonan; Aktas, Ozan; Franz, Yohann; Runge, Antoine; Hawkins, Thomas A.; Ballato, John; Gibson, Ursula; Peacock, Anna

    2017-01-01

    Abstract: Reported here is the fabrication of tapered silicon core fibers possessing a nanospike input that facilitates their seamless splicing to conventional single mode fibers. A proofof-concept 30 µm cladding diameter fiber-based device is demonstrated with nano-spike coupling and propagation losses below 4 dB and 2 dB/cm, respectively. Finite-elementmethod-based simulations show that the nano-spike coupling losses could be reduced to below 1 dB by decreasing the cladding diameters down t...

  3. The Affordable Pre-Finishing of Silicon Carbide for Optical Applications, Phase II

    National Aeronautics and Space Administration — Large aperture, lightweight optical mirror technologies are critical for the future of lightweight telescopes and their attendant missions to explore the planets in...

  4. Three Dimensionally Interconnected Silicon Nanomembranes for Optical Phased Array (OPA) and Optical True Time Delay (TTD) Applications

    2012-06-01

    Joshi, C. Batten, Y. Kwon, S . Beamer, I Shamim , K. Asanovic, and V. Stojanovic, in NOCS 󈧍 Proceedings of the 2009 3rd ACM/IEEE international...Applications 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR( S ) 5d. PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT...NUMBER 7. PERFORMING ORGANIZATION NAME( S ) AND ADDRESS(ES) University of Texas,Microelectronic Research Center, Nanophotonics and Optical Interconnects

  5. The dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the film thickness: αl Experimental limitations and the impact of curvature in the Tauc and Cody plots

    Mok, Tat M.; O'Leary, Stephen K.

    2007-12-01

    Using a model for the optical spectrum associated with hydrogenated amorphous silicon, explicitly taking into account fundamental experimental limitations encountered, we theoretically determine the dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the thickness of the film. We compare these results with that obtained from experiment. We find that the curvature in the Tauc plot plays a significant role in influencing the determination of the Tauc optical gap associated with hydrogenated amorphous silicon, thus affirming an earlier hypothesis of Cody et al. We also find that the spectral dependence of the refractive index plays an important role in influencing the determination of the Cody optical gap. It is thus clear that care must be exercised when drawing conclusions from the dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the thickness of the film.

  6. Hydrogen, oxygen and hydroxyl on porous silicon surface: A joint density-functional perturbation theory and infrared spectroscopy approach

    Alfaro, Pedro; Palavicini, Alessio; Wang, Chumin

    2014-01-01

    Based on the density functional perturbation theory (DFPT), infrared absorption spectra of porous silicon are calculated by using an ordered pore model, in which columns of silicon atoms are removed along the [001] direction and dangling bonds are initially saturated with hydrogen atoms. When these atoms on the pore surface are gradually replaced by oxygen ones, the ab-initio infrared absorption spectra reveal oxygen, hydroxyl, and coupled hydrogen–oxygen vibrational modes. In a parallel way, freestanding porous silicon samples were prepared by using electrochemical etching and they were further thermally oxidized in a dry oxygen ambient. Fourier transform infrared spectroscopy was used to investigate the surface modifications caused by oxygen adsorption. In particular, the predicted hydroxyl and oxygen bound to the silicon pore surface are confirmed. Finally, a global analysis of measured transmittance spectra has been performed by means of a combined DFPT and thin-film optics approach. - Highlights: • The density functional perturbation theory is used to study infrared absorption. • An ordered pore model is used to investigate the oxidation in porous silicon (PSi). • Infrared transmittance spectra of oxidized PSi freestanding samples are measured

  7. Formation of nanosize poly(p-phenylene vinylene) in porous silicon substrate

    Le Rendu, P.; Nguyen, T.P.; Cheah, K.; Joubert, P.

    2003-01-01

    We report the results of optical investigations in porous silicon (PS)/poly(p-phenylene vinylene) (PPV) systems obtained by filling the pores of silicon wafers with polymer. By scanning electron microscopy (SEM), IR, and Raman spectroscopy, we observed that the porous silicon layer was thoroughly filled by the polymer with no significant change in the structure of the materials. This suggests that there is no interaction between the components. On the other hand, the photoluminescence (PL) spectra of the devices investigated at different temperatures (from 11 to 290 K) showed that both materials are active at low temperatures. Porous silicon has a band located at 398 nm while PPV has two bands at 528 and 570 nm. As the temperature increases, the PL intensity of porous silicon decreases and that PPV is blue shifted. A new band emerging at 473 nm may indicate an energy transfer from the porous silicon to PPV, involving short segments of the polymer. The band of PPV located at 515 nm becomes more dominant and indicates that the nanosize polymer films are formed in the pores of the silicon layer, in agreement with the results obtained by SEM, IR, and Raman analyses

  8. Structural, Electrical and Optical Properties of TiO2 Thin Film Deposited on the Nano Porous Silicon Template

    Bahar, Mahmood; Dermani, Ensieh Khalili

    The porous silicon (PSi), which is produced by the electrochemical etching, has been used as a substrate for the growth of the titanium oxide (TiO2) thin films. By using the EBPVD method, TiO2 thin films have been deposited on the surface of the PSi substrate. TiO2/PSi layers were annealed at the temperature of 400∘C, 500∘C and 600∘C for different tests. The morphology and structures of layers were investigated by the scanning electron microscopy (SEM) and X-ray diffraction (XRD). The current-voltage characteristic curves of samples and the ideality factor of heterojunction were studied. The results showed that the electrical properties of the samples change with increase in the annealing temperature. The optical properties of the prepared samples were investigated by using UV-Vis and photoluminescence (PL) spectroscopy. Green light emission of the PSi combined with the blue light and violet-blue emission obtained from the TiO2/PSi PL spectra. The results showed that the optical band gap energy of the PSi has increased from 1.86eV to 2.93eV due to the deposition of TiO2 thin film.

  9. 1 kHz 2D Visual Motion Sensor Using 20 × 20 Silicon Retina Optical Sensor and DSP Microcontroller.

    Liu, Shih-Chii; Yang, MinHao; Steiner, Andreas; Moeckel, Rico; Delbruck, Tobi

    2015-04-01

    Optical flow sensors have been a long running theme in neuromorphic vision sensors which include circuits that implement the local background intensity adaptation mechanism seen in biological retinas. This paper reports a bio-inspired optical motion sensor aimed towards miniature robotic and aerial platforms. It combines a 20 × 20 continuous-time CMOS silicon retina vision sensor with a DSP microcontroller. The retina sensor has pixels that have local gain control and adapt to background lighting. The system allows the user to validate various motion algorithms without building dedicated custom solutions. Measurements are presented to show that the system can compute global 2D translational motion from complex natural scenes using one particular algorithm: the image interpolation algorithm (I2A). With this algorithm, the system can compute global translational motion vectors at a sample rate of 1 kHz, for speeds up to ±1000 pixels/s, using less than 5 k instruction cycles (12 instructions per pixel) per frame. At 1 kHz sample rate the DSP is 12% occupied with motion computation. The sensor is implemented as a 6 g PCB consuming 170 mW of power.

  10. Porous Silicon-Based Biosensors: Towards Real-Time Optical Detection of Target Bacteria in the Food Industry.

    Massad-Ivanir, Naama; Shtenberg, Giorgi; Raz, Nitzan; Gazenbeek, Christel; Budding, Dries; Bos, Martine P; Segal, Ester

    2016-11-30

    Rapid detection of target bacteria is crucial to provide a safe food supply and to prevent foodborne diseases. Herein, we present an optical biosensor for identification and quantification of Escherichia coli (E. coli, used as a model indicator bacteria species) in complex food industry process water. The biosensor is based on a nanostructured, oxidized porous silicon (PSi) thin film which is functionalized with specific antibodies against E. coli. The biosensors were exposed to water samples collected directly from process lines of fresh-cut produce and their reflectivity spectra were collected in real time. Process water were characterized by complex natural micro-flora (microbial load of >10 7  cell/mL), in addition to soil particles and plant cell debris. We show that process water spiked with culture-grown E. coli, induces robust and predictable changes in the thin-film optical interference spectrum of the biosensor. The latter is ascribed to highly specific capture of the target cells onto the biosensor surface, as confirmed by real-time polymerase chain reaction (PCR). The biosensors were capable of selectively identifying and quantifying the target cells, while the target cell concentration is orders of magnitude lower than that of other bacterial species, without any pre-enrichment or prior processing steps.

  11. An optical MEMS accelerometer fabricated using double-sided deep reactive ion etching on silicon-on-insulator wafer

    Teo, Adrian J. T.; Li, Holden; Tan, Say Hwa; Yoon, Yong-Jin

    2017-06-01

    Optical MEMS devices provide fast detection, electromagnetic resilience and high sensitivity. Using this technology, an optical gratings based accelerometer design concept was developed for seismic motion detection purposes that provides miniaturization, high manufacturability, low costs and high sensitivity. Detailed in-house fabrication procedures of a double-sided deep reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer for a micro opto electro mechanical system (MOEMS) device are presented and discussed. Experimental results obtained show that the conceptual device successfully captured motion similar to a commercial accelerometer with an average sensitivity of 13.6 mV G-1, and a highest recorded sensitivity of 44.1 mV G-1. A noise level of 13.5 mV was detected due to experimental setup limitations. This is the first MOEMS accelerometer developed using double-sided DRIE on SOI wafer for the application of seismic motion detection, and is a breakthrough technology platform to open up options for lower cost MOEMS devices.

  12. An optical MEMS accelerometer fabricated using double-sided deep reactive ion etching on silicon-on-insulator wafer

    Teo, Adrian J T; Li, Holden; Yoon, Yong-Jin; Tan, Say Hwa

    2017-01-01

    Optical MEMS devices provide fast detection, electromagnetic resilience and high sensitivity. Using this technology, an optical gratings based accelerometer design concept was developed for seismic motion detection purposes that provides miniaturization, high manufacturability, low costs and high sensitivity. Detailed in-house fabrication procedures of a double-sided deep reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer for a micro opto electro mechanical system (MOEMS) device are presented and discussed. Experimental results obtained show that the conceptual device successfully captured motion similar to a commercial accelerometer with an average sensitivity of 13.6 mV G −1 , and a highest recorded sensitivity of 44.1 mV G −1 . A noise level of 13.5 mV was detected due to experimental setup limitations. This is the first MOEMS accelerometer developed using double-sided DRIE on SOI wafer for the application of seismic motion detection, and is a breakthrough technology platform to open up options for lower cost MOEMS devices. (technical note)

  13. Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

    George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

    2015-06-24

    The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

  14. One-way optical transmission in silicon photonic crystal heterojunction with circular and square scatterers

    Liu, Dan, E-mail: liudanhu725@126.com [School of Physics and Mechanical & Electrical Engineering, Hubei University of Education, Wuhan, 430205 (China); Hu, Sen [School of Physics and Mechanical & Electrical Engineering, Hubei University of Education, Wuhan, 430205 (China); Gao, Yihua [Wuhan National Laboratory for Optoelectronics (WNLO), School of Physics, Huazhong University of Science and Technology (HUST), Wuhan, 430074 (China)

    2017-07-12

    A 2D orthogonal square-lattice photonic crystal (PC) heterojunction consisting of circular and square air holes in silicon is presented. Band structures are calculated using the plane wave expansion method, and the transmission properties are investigated by the finite-different time-domain simulations. Thanks to the higher diffraction orders excited when the circular and square holes are interlaced along the interface, one-way transmission phenomena can exist within wide frequency regions. The higher order diffraction is further enhanced through two different interface optimization designs proposed by modifying the PC structure of the hetero-interface. An orthogonal PC heterojunction for wide-band and efficient one-way transmission is constructed, and the maximum transmissivity is up to 78%. - Highlights: • Photonic crystal heterojunction with circular and square scatterers is first studied. • One-way transmission efficiency is closely related to the hetero-interface. • Wide-band and efficient one-way transmission is realized.

  15. Lightweight and High-Resolution Single Crystal Silicon Optics for X-ray Astronomy

    Zhang, William W.; Biskach, Michael P.; Chan, Kai-Wing; Mazzarella, James R.; McClelland, Ryan S.; Riveros, Raul E.; Saha, Timo T.; Solly, Peter M.

    2016-01-01

    We describe an approach to building mirror assemblies for next generation X-ray telescopes. It incorporates knowledge and lessons learned from building existing telescopes, including Chandra, XMM-Newton, Suzaku, and NuSTAR, as well as from our direct experience of the last 15 years developing mirror technology for the Constellation-X and International X-ray Observatory mission concepts. This approach combines single crystal silicon and precision polishing, thus has the potential of achieving the highest possible angular resolution with the least possible mass. Moreover, it is simple, consisting of several technical elements that can be developed independently in parallel. Lastly, it is highly amenable to mass production, therefore enabling the making of telescopes of very large photon collecting areas.

  16. Structural, Optical, and Vibrational Properties of ZnO Microrods Deposited on Silicon Substrate

    Lahlouh, Bashar I.; Ikhmayies, Shadia J.; Juwhari, Hassan K.

    2018-03-01

    Zinc oxide (ZnO) microrod films deposited by spray pyrolysis on silicon substrate at 350 ± 5°C have been studied and evaluated, and compared with thin films deposited by electron beam to confirm the identity of the studied samples. The films were characterized using different techniques. The microrod structure was studied and confirmed by scanning electron microscopy. Fourier-transform infrared (FTIR) spectroscopy and x-ray diffraction analysis confirmed successful deposition of ZnO thin films with the expected wurtzite structure. Reflectance data showed a substantial drop across the whole studied wavelength range. The photoluminescence (PL) spectra of the studied samples showed a peak at ˜ 360 nm, representing a signature of ZnO. The shift in the PL peak position is due to defects and other species present in the films, as confirmed by FTIR and energy-dispersive x-ray spectroscopy results.

  17. Integrated reconfigurable microring based silicon WDM receiver for on-chip optical interconnect

    Shen, Ao; Yang, Long-Zhi; Dai, Ting-Ge; Hao, Yin-Lei; Jiang, Xiao-Qing; Yang, Jian-Yi; Qiu, Chen

    2015-01-01

    We demonstrate an integrated reconfigurable wavelength division multiplexing receiver on the silicon-on-insulator (SOI) platform. The receiver is composed of a 1 × 8 thermally tunable microring resonator filter and Ge–Si photodetectors. With low thermal tuning powers the channel allocation of the receiver can be reconfigured with high accuracy and flexibility. The thermal tuning efficiency is approximately 8 mW nm −1 . We show eight-channel configurations with channel spacing of 100 GHz and 50 GHz and a configuration in which all eight channels cover an entire free spectral range of the ring with uniform channel spacing of 1.2 nm. Each channel can receive high-quality signals with a data rate of up to 13.5 Gb s −1 ; thus an aggregate data rate higher than 100 Gb s −1 can be achieved. (paper)

  18. Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

    Chiles, Jeff; Nader, Nima; Hickstein, Daniel D.; Yu, Su Peng; Briles, Travis Crain; Carlson, David; Jung, Hojoong; Shainline, Jeffrey M.; Diddams, Scott; Papp, Scott B.; Nam, Sae Woo; Mirin, Richard P.

    2018-04-01

    We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\\times 10^6 $ at 1552 nm, and $>1.2\\times 10^6$ throughout $\\lambda$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.

  19. Effect of Current Density on Optical Properties of Anisotropic Photoelectrochemical Etched Silicon (110)

    Amirhoseiny, M.; Hassan, Z.; Ng, S. S.

    2012-08-01

    Photoelectrochemical etched Si layers were prepared on n-type (110) oriented silicon wafer. The photoluminescence (PL), Fourier transformed infrared (FTIR) absorption and Raman spectroscopies of etched Si (110) at two different current densities were studied. Both samples showed PL peak in the visible spectral range situated from 650 nm to 750 nm. The corresponding changes in Raman spectra at different current density are discussed. The blue shift in the PL and Raman peaks is consequent of the quantum confinement effect and defect states of surface Si nanocrystallites complexes and hydrogen atoms of the photoelectrochemical etched Si (110) samples. The attenuated total reflection (ATR) results show both hydrogen and oxygen related IR modes in the samples which can be used to explain the PL effect.

  20. All-optically tunable waveform synthesis by a silicon nanowaveguide ring resonator coupled with a photonic-crystal fiber frequency shifter

    Savvin, Aleksandr D.

    2011-03-01

    A silicon nanowaveguide ring resonator is combined with a photonic-crystal fiber (PCF) frequency shifter to demonstrate an all-optically tunable synthesis of ultrashort pulse trains, modulated by ultrafast photoinduced free-carrier generation in the silicon resonator. Pump-probe measurements performed with a 50-fs, 625-nm second-harmonic output of a Cr:forsterite laser, used as a carrier-injecting pump, and a 1.50-1.56-μm frequency-tunable 100-fs soliton output of a photonic-crystal fiber, serving as a probe, resolve tunable ultrafast oscillatory features in the silicon nanowaveguide resonator response. © 2010 Elsevier B.V. All rights reserved.

  1. All-optically tunable waveform synthesis by a silicon nanowaveguide ring resonator coupled with a photonic-crystal fiber frequency shifter

    Savvin, Aleksandr D.; Melnikov, Vasily; Fedotov, Il'ya V.; Fedotov, Andrei B.; Perova, Tatiana S.; Zheltikov, Aleksei M.

    2011-01-01

    A silicon nanowaveguide ring resonator is combined with a photonic-crystal fiber (PCF) frequency shifter to demonstrate an all-optically tunable synthesis of ultrashort pulse trains, modulated by ultrafast photoinduced free-carrier generation in the silicon resonator. Pump-probe measurements performed with a 50-fs, 625-nm second-harmonic output of a Cr:forsterite laser, used as a carrier-injecting pump, and a 1.50-1.56-μm frequency-tunable 100-fs soliton output of a photonic-crystal fiber, serving as a probe, resolve tunable ultrafast oscillatory features in the silicon nanowaveguide resonator response. © 2010 Elsevier B.V. All rights reserved.

  2. Direct multielement trace analyses of silicon carbide powders by spark ablation simultaneous inductively coupled plasma optical emission spectrometry

    Kiera, Arne F.; Schmidt-Lehr, Sebastian; Song, Ming; Bings, Nicolas H.; Broekaert, Jose A.C.

    2008-01-01

    A procedure for the direct analysis of silicon carbide powders (SiC) by simultaneous detection inductively coupled plasma optical emission spectrometry using a Spectro-CIROS TM spectrometer (CCD-ICP-OES) and a novel spark ablation system Spectro-SASSy (SA) as sample introduction technique is described. The sample preparation procedure for SA of non-conducting material is based on mixing the sample powders with a conducting matrix, in this case copper and briquetting pellets. Pressing time, pressure and mixing ratio are shown to be important parameters of the pelleting technique with respect to their mechanical stability for the reliability of the analysis results. A mixing ratio of 0.2 g +0.6 g for SiC and Cu, a pressure of 10 t cm -2 and a pressing time of 8 min have been found optimum. It has also been shown that the spark parameters selected are crucial for uniform volatilization. Electron probe micrographs of the burning spots and the analytical signal magnitude showed that a rather hard spark at 100 Hz was optimum. The determination of trace elements in silicon carbide powders is demonstrated using a calibration based on the addition of standard solutions. For Al, Ti, V, Mn and Fe detection limits in the lower μg g -1 range can be achieved. Internal standardization with Y in combination with the addition of standard solutions allows relative standard deviations in the range of 4 to 24% for concentration levels of the order of 3 to 350 μg g -1

  3. Direct multielement trace analyses of silicon carbide powders by spark ablation simultaneous inductively coupled plasma optical emission spectrometry

    Kiera, Arne F.; Schmidt-Lehr, Sebastian; Song, Ming [Institute for Inorganic and Applied Chemistry, University of Hamburg, Martin-Luther-King-Platz 6, D-20146 Hamburg (Germany); Bings, Nicolas H. [Institute for Inorganic and Applied Chemistry, University of Hamburg, Martin-Luther-King-Platz 6, D-20146 Hamburg (Germany)], E-mail: bings@chemie.uni-hamburg.de; Broekaert, Jose A.C. [Institute for Inorganic and Applied Chemistry, University of Hamburg, Martin-Luther-King-Platz 6, D-20146 Hamburg (Germany)

    2008-02-15

    A procedure for the direct analysis of silicon carbide powders (SiC) by simultaneous detection inductively coupled plasma optical emission spectrometry using a Spectro-CIROS{sup TM} spectrometer (CCD-ICP-OES) and a novel spark ablation system Spectro-SASSy (SA) as sample introduction technique is described. The sample preparation procedure for SA of non-conducting material is based on mixing the sample powders with a conducting matrix, in this case copper and briquetting pellets. Pressing time, pressure and mixing ratio are shown to be important parameters of the pelleting technique with respect to their mechanical stability for the reliability of the analysis results. A mixing ratio of 0.2 g +0.6 g for SiC and Cu, a pressure of 10 t cm{sup -2} and a pressing time of 8 min have been found optimum. It has also been shown that the spark parameters selected are crucial for uniform volatilization. Electron probe micrographs of the burning spots and the analytical signal magnitude showed that a rather hard spark at 100 Hz was optimum. The determination of trace elements in silicon carbide powders is demonstrated using a calibration based on the addition of standard solutions. For Al, Ti, V, Mn and Fe detection limits in the lower {mu}g g{sup -1} range can be achieved. Internal standardization with Y in combination with the addition of standard solutions allows relative standard deviations in the range of 4 to 24% for concentration levels of the order of 3 to 350 {mu}g g{sup -1}.

  4. Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide

    Poudel, P.R.; Poudel, P.P.; Paramo, J.A.; Strzhemechny, Y.M.; Rout, B.; McDaniel, F.D.

    2015-01-01

    The structural and optical properties of carbon nanoclusters formed in thermally grown silicon dioxide film via the ion beam synthesis process have been investigated. A low-energy (70 keV) carbon ion beam (C - ) at a fluence of 3 x 10 17 atoms/cm 2 was used for implantation into a thermally grown silicon dioxide layer (500 nm thick) on a Si (100) wafer. Several parts of the implanted samples were subsequently annealed in a gas mixture (4 % H 2 + 96 % Ar) at 900 C for different time periods. The as-implanted and annealed samples were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). The carbon ion implantation depth profile was simulated using a widely used Monte Carlo-based simulation code SRIM-2012. Additionally, the elemental depth profile of the implanted carbon along with host elements of silicon and oxygen were simulated using a dynamic ion-solid interaction code T-DYN, which incorporates the effects of the surface sputtering and gradual change in the elemental composition in the implanted layers due to high-fluence ion implantation. The elemental depth profile obtained from the XPS measurements matches closely to the T-DYN predictions. Raman measurements indicate the formation of graphitic phases in the annealed samples. The graphitic peak (G-peak) was found to be increased with the annealing time duration. In the sample annealed for 10 min, the sizes of the carbon nanoclusters were found to be 1-4 nm in diameter using TEM. The PL measurements at room temperature using a 325-nm laser show broad-band emissions in the ultraviolet to visible range in the as-implanted sample. Intense narrow bands along with the broad bands were observed in the annealed samples. The defects present in the as-grown samples along with carbon ion-induced defect centers in the as-implanted samples are the main contributors to the observed

  5. Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide

    Poudel, P.R. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States); Intel Corporation, Rio Rancho, NM (United States); Poudel, P.P. [University of Kentucky, Department of Chemistry, Lexington, KY (United States); Paramo, J.A.; Strzhemechny, Y.M. [Texas Christian University, Department of Physics and Astronomy, Fort Worth, TX (United States); Rout, B. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States); University of North Texas, Center for Advanced Research and Technology, Denton, TX (United States); McDaniel, F.D. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States)

    2014-09-18

    The structural and optical properties of carbon nanoclusters formed in thermally grown silicon dioxide film via the ion beam synthesis process have been investigated. A low-energy (70 keV) carbon ion beam (C{sup -}) at a fluence of 3 x 10{sup 17} atoms/cm{sup 2} was used for implantation into a thermally grown silicon dioxide layer (500 nm thick) on a Si (100) wafer. Several parts of the implanted samples were subsequently annealed in a gas mixture (4 % H{sub 2} + 96 % Ar) at 900 C for different time periods. The as-implanted and annealed samples were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). The carbon ion implantation depth profile was simulated using a widely used Monte Carlo-based simulation code SRIM-2012. Additionally, the elemental depth profile of the implanted carbon along with host elements of silicon and oxygen were simulated using a dynamic ion-solid interaction code T-DYN, which incorporates the effects of the surface sputtering and gradual change in the elemental composition in the implanted layers due to high-fluence ion implantation. The elemental depth profile obtained from the XPS measurements matches closely to the T-DYN predictions. Raman measurements indicate the formation of graphitic phases in the annealed samples. The graphitic peak (G-peak) was found to be increased with the annealing time duration. In the sample annealed for 10 min, the sizes of the carbon nanoclusters were found to be 1-4 nm in diameter using TEM. The PL measurements at room temperature using a 325-nm laser show broad-band emissions in the ultraviolet to visible range in the as-implanted sample. Intense narrow bands along with the broad bands were observed in the annealed samples. The defects present in the as-grown samples along with carbon ion-induced defect centers in the as-implanted samples are the main

  6. Online analysis of oxygen inside silicon-glass microreactors with integrated optical sensors

    Ehgartner, Josef; Sulzer, Philipp; Burger, Tobias

    2016-01-01

    A powerful online analysis set-up for oxygen measurements within microfluidic devices is presented. It features integration of optical oxygen sensors into microreactors, which enables contactless, accurate and inexpensive readout using commercially available oxygen meters via luminescent lifetime...... monitoring of enzyme transformations, including d-alanine or d-phenylalanine oxidation by d-amino acid oxidase, and glucose oxidation by glucose oxidase....

  7. Identification and tunable optical coherent control of transition-metal spins in silicon carbide

    Bosma, Tom; Lof, Gerrit J. J.; Gilardoni, Carmem M.; Zwier, Olger V.; Hendriks, Freddie; Ellison, Alexandre; Magnusson, Björn; Gällström, Andreas; Ivanov, Ivan G.; Son, N. T.; Havenith, Remco W. A.; Wal, Caspar H. van der

    2018-01-01

    Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Several suitable centers have been identified, most famously the nitrogen-vacancy defect in diamond. However, integration

  8. Programming Nanoparticles in Multiscale: Optically Modulated Assembly and Phase Switching of Silicon Nanoparticle Array.

    Wang, Letian; Rho, Yoonsoo; Shou, Wan; Hong, Sukjoon; Kato, Kimihiko; Eliceiri, Matthew; Shi, Meng; Grigoropoulos, Costas P; Pan, Heng; Carraro, Carlo; Qi, Dongfeng

    2018-03-27

    Manipulating and tuning nanoparticles by means of optical field interactions is of key interest for nanoscience and applications in electronics and photonics. We report scalable, direct, and optically modulated writing of nanoparticle patterns (size, number, and location) of high precision using a pulsed nanosecond laser. The complex nanoparticle arrangement is modulated by the laser pulse energy and polarization with the particle size ranging from 60 to 330 nm. Furthermore, we report fast cooling-rate induced phase switching of crystalline Si nanoparticles to the amorphous state. Such phase switching has usually been observed in compound phase change materials like GeSbTe. The ensuing modification of atomic structure leads to dielectric constant switching. Based on these effects, a multiscale laser-assisted method of fabricating Mie resonator arrays is proposed. The number of Mie resonators, as well as the resonance peaks and dielectric constants of selected resonators, can be programmed. The programmable light-matter interaction serves as a mechanism to fabricate optical metasurfaces, structural color, and multidimensional optical storage devices.

  9. Determination of 1-chloro-4-[2,2,2-trichloro-1-(4-chlorophenyl)ethyl]benzene and related compounds in marine pore water by automated thermal desorption-gas chromatography/mass spectrometry using disposable optical fiber

    Eganhouse, Robert P.; DiFilippo, Erica L

    2015-01-01

    A method is described for determination of ten DDT-related compounds in marine pore water based on equilibrium solid-phase microextraction (SPME) using commercial polydimethylsiloxane-coated optical fiber with analysis by automated thermal desorption-gas chromatography/mass spectrometry (TD-GC/MS). Thermally cleaned fiber was directly exposed to sediments and allowed to reach equilibrium under static conditions at the in situ field temperature. Following removal, fibers were rinsed, dried and cut into appropriate lengths for storage in leak-tight containers at -20°C. Analysis by TD-GC/MS under full scan (FS) and selected ion monitoring (SIM) modes was then performed. Pore-water method detection limits in FS and SIM modes were estimated at 0.05-2.4ng/L and 0.7-16pg/L, respectively. Precision of the method, including contributions from fiber handling, was less than 10%. Analysis of independently prepared solutions containing eight DDT compounds yielded concentrations that were within 6.9±5.5% and 0.1±14% of the actual concentrations in FS and SIM modes, respectively. The use of optical fiber with automated analysis allows for studies at high temporal and/or spatial resolution as well as for monitoring programs over large spatial and/or long temporal scales with adequate sample replication. This greatly enhances the flexibility of the technique and improves the ability to meet quality control objectives at significantly lower cost.

  10. High-frequency conductivity of optically excited charge carriers in hydrogenated nanocrystalline silicon investigated by spectroscopic femtosecond pump–probe reflectivity measurements

    He, Wei [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom); Yurkevich, Igor V. [Aston University, Nonlinearity and Complexity Research Group, Birmingham B4 7ET (United Kingdom); Zakar, Ammar [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom); Kaplan, Andrey, E-mail: a.kaplan.1@bham.ac.uk [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom)

    2015-10-01

    We report an investigation into the high-frequency conductivity of optically excited charge carriers far from equilibrium with the lattice. The investigated samples consist of hydrogenated nanocrystalline silicon films grown on a thin film of silicon oxide on top of a silicon substrate. For the investigation, we used an optical femtosecond pump–probe setup to measure the reflectance change of a probe beam. The pump beam ranged between 580 and 820 nm, whereas the probe wavelength spanned 770 to 810 nm. The pump fluence was fixed at 0.6 mJ/cm{sup 2}. We show that at a fixed delay time of 300 fs, the conductivity of the excited electron–hole plasma is described well by a classical conductivity model of a hot charge carrier gas found at Maxwell–Boltzmann distribution, while Fermi–Dirac statics is not suitable. This is corroborated by values retrieved from pump–probe reflectance measurements of the conductivity and its dependence on the excitation wavelength and carrier temperature. The conductivity decreases monotonically as a function of the excitation wavelength, as expected for a nondegenerate charge carrier gas. - Highlights: • We study high‐frequency conductivity of excited hydrogenated nanocrystalline silicon. • Reflectance change was measured as a function of pump and probe wavelength. • Maxwell–Boltzmann transport theory was used to retrieve the conductivity. • The conductivity decreases monotonically as a function of the pump wavelength.

  11. Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

    Gerke, S., E-mail: sebastian.gerke@uni-konstanz.de [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Becker, H.-W.; Rogalla, D. [RUBION — Central Unit for Ion Beams and Radioisotopes, University of Bochum, Bochum, 44780 (Germany); Singer, F.; Brinkmann, N.; Fritz, S.; Hammud, A.; Keller, P.; Skorka, D.; Sommer, D. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Weiß, C. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Flege, S. [Department of Materials Science, TU Darmstadt, Darmstadt 64287 (Germany); Hahn, G. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Job, R. [Department of Electrical Engineering and Computer Science, Münster University of Applied Sciences, Steinfurt 48565 (Germany); Terheiden, B. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany)

    2016-01-01

    Amorphous silicon (a-Si) is common in the production of technical devices and can be deposited by several techniques. In this study intrinsic and doped, hydrogen-less amorphous silicon films are RF magnetron sputter deposited and post-hydrogenated in a remote hydrogen plasma reactor at a temperature of 370 °C. Secondary ion mass spectrometry of a boron doped (p) a-Si layer shows that the concentration of dopants in the sputtered layer becomes the same as present in the sputter-target. Improved surface passivation of phosphorous doped 5 Ω cm, FZ, (n) c-Si can be achieved by post-hydrogenation yielding a minority carrier lifetime of ~ 360 μs finding an optimum for ~ 40 nm thin films, deposited at 325 °C. This relatively low minority carrier lifetime indicates high disorder of the hydrogen-less sputter deposited amorphous network. Post-hydrogenation leads to a decrease of the number of localized states within the band gap. Optical band gaps (Taucs gab as well as E{sub 04}) can be determined to ~ 1.88 eV after post-hydrogenation. High resolution transmission electron microscopy and optical Raman investigations show that the sputtered layers are amorphous and stay like this during post-hydrogenation. As a consequence of the missing hydrogen during deposition, sputtered a-Si forms a rough surface compared to CVD a-Si. Atomic force microscopy points out that the roughness decreases by up to 25% during post-hydrogenation. Nuclear resonant reaction analysis permits the investigation of hydrogen depth profiles and allows determining the diffusion coefficients of several post-hydrogenated samples from of a model developed within this work. A dependency of diffusion coefficients on the duration of post-hydrogenation indicates trapping diffusion as the main diffusion mechanism. Additional Fourier transform infrared spectroscopy measurements show that hardly any interstitial hydrogen exists in the post-hydrogenated a-Si layers. The results of this study open the way for

  12. Advanced methods for light trapping in optically thin silicon solar cells

    Nagel, James Richard

    2011-12-01

    The field of light trapping is the study of how best to absorb light in a thin film of material when most light either reflects away at the surface or transmits straight through to the other side. This has tremendous application to the field of photovoltaics where thin silicon films can be manufactured cheaply, but also fail to capture all of the available photons in the solar spectrum. Advancements in light trapping therefore bring us closer to the day when photovoltaic devices may reach grid parity with traditional fossil fuels on the electrical energy market. This dissertation advances our understanding of light trapping by first modeling the effects of loss in planar dielectric waveguides. The mathematical framework developed here can be used to model any arbitrary three-layer structure with mixed gain or loss and then extract the total field solution for the guided modes. It is found that lossy waveguides possess a greater number of eigenmodes than their lossless counterparts, and that these "loss guided" modes attenuate much more rapidly than conventional modes. Another contribution from this dissertation is the exploration of light trapping through the use of dielectric nanospheres embedded directly within the active layer of a thin silicon film. The primary benefit to this approach is that the device can utilize a surface nitride layer serving as an antireflective coating while still retaining the benefits of light trapping within the film. The end result is that light trapping and light injection are effectively decoupled from each other and may be independently optimized within a single photovoltaic device. The final contribution from this work is a direct numerical comparison between multiple light trapping schemes. This allows us to quantify the relative performances of various design techniques against one another and objectively determine which ideas tend to capture the most light. Using numerical simulation, this work directly compares the absorption

  13. Nitride-based Quantum-Confined Structures for Ultraviolet-Visible Optical Devices on Silicon Substrates

    Janjua, Bilal

    2017-04-01

    III–V nitride quantum-confined structures embedded in nanowires (NWs), also known as quantum-disks-in-nanowires (Qdisks-in-NWs), have recently emerged as a new class of nanoscale materials exhibiting outstanding properties for optoelectronic devices and systems. It is promising for circumventing the technology limitation of existing planar epitaxy devices, which are bounded by the lattice-, crystal-structure-, and thermal- matching conditions. This work presents significant advances in the growth of good quality GaN, InGaN and AlGaN Qdisks-in-NWs based on careful optimization of the growth parameters, coupled with a meticulous layer structure and active region design. The NWs were grown, catalyst-free, using plasma assisted molecular beam epitaxy (PAMBE) on silicon (Si) substrates. A 2-step growth scheme was developed to achieve high areal density, dislocation free and vertically aligned NWs on Ti/Si substrates. Numerical modeling of the NWs structures, using the nextnano3 software, showed reduced polarization fields, and, in the presence of Qdisks, exhibited improved quantum-confinement; thus contributing to high carrier radiative-recombination rates. As a result, based on the growth and device structure optimization, the technologically challenging orange and yellow NWs light emitting devices (LEDs) targeting the ‘green-yellow’ gap were demonstrated on scalable, foundry compatible, and low-cost Ti coated Si substrates. The NWs work was also extended to LEDs emitting in the ultraviolet (UV) range with niche applications in environmental cleaning, UV-curing, medicine, and lighting. In this work, we used a Ti (100 nm) interlayer and Qdisks to achieve good quality AlGaN based UV-A (320 - 400 nm) device. To address the issue of UV-absorbing polymer, used in the planarization process, we developed a pendeo-epitaxy technique, for achieving an ultra-thin coalescence of the top p-GaN contact layer, for a self-planarized Qdisks-in-NWs UV-B (280 – 320 nm) LED grown

  14. Process of preparing tritiated porous silicon

    Tam, Shiu-Wing

    1997-01-01

    A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

  15. Optical waveform sampling and error-free demultiplexing of 1.28 Tbit/s serial data in a silicon nanowire

    Ji, Hua; Hu, Hao; Galili, Michael

    2010-01-01

    We experimentally demonstrate 640 Gbit/s and 1.28 Tbit/s serial data optical waveform sampling and 640-to-10 Gbit/s and 1.28 Tbit/s-to-10 Gbit/s error-free demultiplexing using four-wave mixing in a 300nm$$450nm$$5mm silicon nanowire.......We experimentally demonstrate 640 Gbit/s and 1.28 Tbit/s serial data optical waveform sampling and 640-to-10 Gbit/s and 1.28 Tbit/s-to-10 Gbit/s error-free demultiplexing using four-wave mixing in a 300nm$$450nm$$5mm silicon nanowire....

  16. Raman mediated all-optical cascadable inverter using silicon-on-insulator waveguides.

    Sen, Mrinal; Das, Mukul K

    2013-12-01

    In this Letter, we propose an all-optical circuit for a cascadable and integrable logic inverter based on stimulated Raman scattering. A maximum product criteria for noise margin is taken to analyze the cascadability of the inverter. Variation of noise margin for different model parameters is also studied. Finally, the time domain response of the inverter is analyzed for different widths of input pulses.

  17. Optical and electronic properties of microcrystalline silicon as a function of microcrystallinity

    Han, Daxing; Yue, Guozhen; Lorentzen, J. D.; Lin, Jing; Habuchi, H.; Wang, Qi

    2000-01-01

    Films were prepared by hot wire chemical vapor deposition at ∼240 degree sign C with varied hydrogen dilution ratios R=H 2 :SiH 4 from 1 to 20. The optical and electronic properties as a function of microcrystallinity were studied. We found: (a) At low H dilution R≤2, there is no measurable crystallinity by Raman spectroscopy and x-ray diffraction in the a-Si:H matrix, but an optical absorption peak at ∼1.25 eV appears; when R=2, the film shows the lowest subgap absorption, the highest photosensitivity, and the largest optical gap. (b) When R≥3, the c-Si phase is measurable by Raman and a low-energy photoluminescence (PL) band (0.84-1.0 eV) appears in addition to the high-energy band (1.3-1.4 eV). Meanwhile, all the absorption spectra show a featureless line shape. (c) An energy redshift is observed for both PL peaks as the film grows thicker. Finally, (d) the conductivity activation energy first decreases from 0.68 to 0.12 eV, then increases with increasing microcrystallinity. A mode of two sets of energy bands of electronic states for these two-phase materials is suggested. (c) 2000 American Institute of Physics

  18. Nonlinear silicon photonics

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  19. On-chip all-optical wavelength conversion of multicarrier, multilevel modulation (OFDM m-QAM) signals using a silicon waveguide.

    Li, Chao; Gui, Chengcheng; Xiao, Xi; Yang, Qi; Yu, Shaohua; Wang, Jian

    2014-08-01

    We report on-chip all-optical wavelength conversion of multicarrier multilevel modulation signals in a silicon waveguide. Using orthogonal frequency-division multiplexing (OFDM) combined with advanced multilevel quadrature amplitude modulation (QAM) signals (i.e., OFDM m-QAM), we experimentally demonstrate all-optical wavelength conversions of 3.2 Gbaud/s OFDM 16/32/64/128-QAM signals based on the degenerate four-wave mixing (FWM) nonlinear effect in a silicon waveguide. The measured optical signal-to-noise ratio (OSNR) penalties of wavelength conversion are ∼3  dB for OFDM 16-QAM and ∼4  dB for OFDM 32-QAM at 7% forward error correction (FEC) threshold and ∼3.5  dB for OFDM 64-QAM and ∼4.5  dB for OFDM 128-QAM at 20% FEC threshold. The observed clear constellations of converted idlers imply favorable performance obtained for silicon-waveguide-based OFDM 16/32/64/128-QAM wavelength conversions.

  20. Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator

    Ding, Yunhong; Zhu, Xiaolong; Xiao, Sanshui

    2015-01-01

    Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of the Fermi level enables electro-optical modula......Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of the Fermi level enables electro...... with an extinction ratio of 3.8 dB is successfully demonstrated by applying a square-waveform with a 4 V peak-to-peak voltage....

  1. Ultracompact electro-optic phase modulator based on III-V-on-silicon microdisk resonator.

    Lloret, J; Kumar, R; Sales, S; Ramos, F; Morthier, G; Mechet, P; Spuesens, T; Van Thourhout, D; Olivier, N; Fédéli, J-M; Capmany, J

    2012-06-15

    A novel ultracompact electro-optic phase modulator based on a single 9 μm-diameter III-V microdisk resonator heterogeneously integrated on and coupled to a nanophotonic waveguide is presented. Modulation is enabled by effective index modification through carrier injection. Proof-of-concept implementation involving binary phase shift keying modulation format is assembled. A power imbalance of ∼0.6  dB between both symbols and a modulation rate up to 1.8 Gbps are demonstrated without using any special driving technique.

  2. Non-invasive, in vitro analysis of islet insulin production enabled by an optical porous silicon biosensor.

    Chhasatia, Rinku; Sweetman, Martin J; Harding, Frances J; Waibel, Michaela; Kay, Tom; Thomas, Helen; Loudovaris, Thomas; Voelcker, Nicolas H

    2017-05-15

    A label-free porous silicon (pSi) based, optical biosensor, using both an antibody and aptamer bioreceptor motif has been developed for the detection of insulin. Two parallel biosensors were designed and optimised independently, based on each bioreceptor. Both bioreceptors were covalently attached to a thermally hydrosilylated pSi surface though amide coupling, with unreacted surface area rendered stable and low fouling by incorporation of PEG moieties. The insulin detection ability of each biosensor was determined using interferometric reflectance spectroscopy, using a range of different media both with and without serum. Sensing performance was compared in terms of response value, response time and limit of detection (LOD) for each platform. In order to demonstrate the capability of the best performing biosensor to detect insulin from real samples, an in vitro investigation with the aptamer-modified surface was performed. This biosensor was exposed to buffer conditioned by glucose-stimulated human islets, with the result showing a positive response and a high degree of selectivity towards insulin capture. The obtained results correlated well with the ELISA used in the clinic for assaying glucose-stimulated insulin release from donor islets. We anticipate that this type of sensor can be applied as a rapid point-of-use biosensor to assess the quality of donor islets in terms of their insulin production efficiency, prior to transplantation. Copyright © 2017 Elsevier B.V. All rights reserved.

  3. Real-time Monitoring of Sustained Drug Release using the Optical Properties of Porous Silicon Photonic Crystal Particles

    Wu, E.C.; Andrew, J.S.; Cheng, L; Freeman, W.R.; Pearson, L; Sailor, M.J.

    2011-01-01

    A controlled and observable drug delivery system that enables long-term local drug administration is reported. Biodegradable and biocompatible drug-loaded porous Si microparticles were prepared from silicon wafers, resulting in a porous 1-dimensional photonic crystal (rugate filter) approx. 12 micrometers thick and 35 micrometers across. An organic linker, 1-undecylenic acid, was attached to the Si-H terminated inner surface of the particles by hydrosilylation and the anthracycline drug daunorubicin was bound to the carboxy terminus of the linker. Degradation of the porous Si matrix in vitro was found to release the drug in a linear and sustained fashion for 30 d. The bioactivity of the released daunorubicin was verified on retinal pigment epithelial (RPE) cells. The degradation/drug delivery process was monitored in situ by digital imaging or spectroscopic measurement of the photonic resonance reflected from the nanostructured particles, and a simple linear correlation between observed wavelength and drug release was observed. Changes in the optical reflectance spectrum were sufficiently large to be visible as a distinctive red to green color change. PMID:21122914

  4. Adaptive optics scanning laser ophthalmoscope using liquid crystal on silicon spatial light modulator: Performance study with involuntary eye movement

    Huang, Hongxin; Toyoda, Haruyoshi; Inoue, Takashi

    2017-09-01

    The performance of an adaptive optics scanning laser ophthalmoscope (AO-SLO) using a liquid crystal on silicon spatial light modulator and Shack-Hartmann wavefront sensor was investigated. The system achieved high-resolution and high-contrast images of human retinas by dynamic compensation for the aberrations in the eyes. Retinal structures such as photoreceptor cells, blood vessels, and nerve fiber bundles, as well as blood flow, could be observed in vivo. We also investigated involuntary eye movements and ascertained microsaccades and drifts using both the retinal images and the aberrations recorded simultaneously. Furthermore, we measured the interframe displacement of retinal images and found that during eye drift, the displacement has a linear relationship with the residual low-order aberration. The estimated duration and cumulative displacement of the drift were within the ranges estimated by a video tracking technique. The AO-SLO would not only be used for the early detection of eye diseases, but would also offer a new approach for involuntary eye movement research.

  5. Fabrication of planar optical waveguides by 6.0 MeV silicon ion implantation in Nd-doped phosphate glasses

    Shen, Xiao-Liang; Dai, Han-Qing; Zhang, Liao-Lin; Wang, Yue; Zhu, Qi-Feng; Guo, Hai-Tao; Li, Wei-Nan; Liu, Chun-Xiao

    2018-04-01

    We report the fabrication of a planar optical waveguide by silicon ion implantation into Nd-doped phosphate glass at an energy of 6.0 MeV and a dose of 5.0 × 1014 ions/cm2. The change in the surface morphology of the glass after the implantation can be clearly observed by scanning electron microscopy. The measurement of the dark mode spectrum of the waveguide is conducted using a prism coupler at 632.8 nm. The refractive index distribution of the waveguide is reconstructed by the reflectivity calculation method. The near-field optical intensity profile of the waveguide is measured using an end-face coupling system. The waveguide with good optical properties on the glass matrix may be valuable for the application of the Nd-doped phosphate glass in integrated optical devices.

  6. Optical Absorption and Visible Photoluminescence from Thin Films of Silicon Phthalocyanine Derivatives

    Arturo Rodríguez Gómez

    2014-09-01

    Full Text Available The interest of microelectronics industry in new organic compounds for the manufacture of luminescent devices has increased substantially in the last decade. In this paper, we carried out a study of the usage feasibility of three organic bidentate ligands (2,6-dihydroxyanthraquinone, anthraflavic acid and potassium derivative salt of anthraflavic acid for the synthesis of an organic semiconductor based in silicon phthalocyanines (SiPcs. We report the visible photoluminescence (PL at room temperature obtained from thermal-evaporated thin films of these new materials. The surface morphology of these films was analyzed by atomic force microscopy (AFM and scanning electron microscopy (SEM. AFM indicated that the thermal evaporation technique is an excellent resource in order to obtain low thin film roughness when depositing these kinds of compounds. Fourier transform infrared spectroscopy (FTIR spectroscopy was employed to investigate possible changes in the intra-molecular bonds and to identify any evidence of crystallinity in the powder compounds and in the thin films after their deposition. FTIR showed that there was not any important change in the samples after the thermal deposition. The absorption coefficient (α in the absorption region reveals non-direct transitions. Furthermore, the PL of all the investigated samples were observed with the naked eye in a bright background and also measured by a spectrofluorometer. The normalized PL spectra showed a Stokes shift ≈ 0.6 eV in two of our three samples, and no PL emission in the last one. Those results indicate that the Vis PL comes from a recombination of charge carriers between conduction band and valence band preceded by a non-radiative relaxation in the conduction band tails.

  7. Optical Characterization of Tissue Phantoms Using a Silicon Integrated fdNIRS System on Chip.

    Sthalekar, Chirag C; Miao, Yun; Koomson, Valencia Joyner

    2017-04-01

    An interface circuit with signal processing and digitizing circuits for a high frequency, large area avalanche photodiode (APD) has been integrated in a 130 nm BiCMOS chip. The system enables the absolute oximetry of tissue using frequency domain Near Infrared Spectroscopy (fdNIRS). The system measures the light absorbed and scattered by the tissue by measuring the reduction in the amplitude of signal and phase shift introduced between the light source and detector which are placed a finite distance away from each other. The received 80 MHz RF signal is downconverted to a low frequency and amplified using a heterodyning scheme. The front-end transimpedance amplifier has a 3-level programmable gain that increases the dynamic range to 60 dB. The phase difference between an identical reference channel and the optical channel is measured with a 0.5° accuracy. The detectable current range is [Formula: see text] and with a 40 A/W reponsivity using the APD, power levels as low as 500 pW can be detected. Measurements of the absorption and reduced scattering coefficients of solid tissue phantoms using this system are compared with those using a commercial instrument with differences within 30%. Measurement of a milk based liquid tissue phantom show an increase in absorption coefficient with addition of black ink. The miniaturized circuit serves as an efficiently scalable system for multi-site detection for applications in neonatal cerebral oximetry and optical mammography.

  8. Nanopatterning of Crystalline Silicon Using Anodized Aluminum Oxide Templates for Photovoltaics

    Chao, Tsu-An

    A novel thin film anodized aluminum oxide templating process was developed and applied to make nanopatterns on crystalline silicon to enhance the optical properties of silicon. The thin film anodized aluminum oxide was created to improve the conventional thick aluminum templating method with the aim for potential large scale fabrication. A unique two-step anodizing method was introduced to create high quality nanopatterns and it was demonstrated that this process is superior over the original one-step approach. Optical characterization of the nanopatterned silicon showed up to 10% reduction in reflection in the short wavelength range. Scanning electron microscopy was also used to analyze the nanopatterned surface structure and it was found that interpore spacing and pore density can be tuned by changing the anodizing potential.

  9. Advances in silicon nanophotonics

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  10. Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

    Krivyakin, G.K.; Volodin, V.; Kochubei, S.A.; Kamaev, G.N.; Purkrt, Adam; Remeš, Zdeněk; Fajgar, Radek; Stuchlíková, The-Ha; Stuchlík, Jiří

    2016-01-01

    Roč. 50, č. 7 (2016), s. 935-940 ISSN 1063-7826 R&D Projects: GA MŠk LH12236 Institutional support: RVO:68378271 ; RVO:67985858 Keywords : hydrogenated amorphous silicon * nanocrystals * laser annealing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.602, year: 2016

  11. Influence of organic solvent on optical and structural properties of ultra-small silicon dots synthesized by UV laser ablation in liquid.

    Intartaglia, Romuald; Bagga, Komal; Genovese, Alessandro; Athanassiou, Athanassia; Cingolani, Roberto; Diaspro, Alberto; Brandi, Fernando

    2012-11-28

    Ultra small silicon nanoparticles (Si-NPs) with narrow size distribution are prepared in a one step process by UV picosecond laser ablation of silicon bulk in liquid. Characterization by electron microscopy and absorption spectroscopy proves Si-NPs generation with an average size of 2 nm resulting from an in situ photofragmentation effect. In this context, the current work aims to explore the liquid medium (water and toluene) effect on the Si-NPs structure and on the optical properties of the colloidal solution. Si-NPs with high pressure structure (s.g. Fm3m) and diamond-like structure (s.g. Fd3m), in water, and SiC moissanite 3C phase (s.g. F4[combining macron]3m) in toluene are revealed by the means of High-Resolution TEM and HAADF-STEM measurements. Optical investigations show that water-synthesized Si-NPs have blue-green photoluminescence emission characterized by signal modulation at a frequency of 673 cm(-1) related to electron-phonon coupling. The synthesis in toluene leads to generation of Si-NPs embedded in the graphitic carbon-polymer composite which has intrinsic optical properties at the origin of the optical absorption and luminescence of the obtained colloidal solution.

  12. X-ray optics developments at ESA

    Bavdaz, M.; Wille, E.; Wallace, K.

    2013-01-01

    Future high energy astrophysics missions will require high performance novel X-ray optics to explore the Universe beyond the limits of the currently operating Chandra and Newton observatories. Innovative optics technologies are therefore being developed and matured by the European Space Agency (ESA......) in collaboration with research institutions and industry, enabling leading-edge future science missions. Silicon Pore Optics (SPO) [1 to 21] and Slumped Glass Optics (SGO) [22 to 29] are lightweight high performance X-ray optics technologies being developed in Europe, driven by applications in observatory class...... reflective coatings [30 to 35]. In addition, the progress with the X-ray test facilities and associated beam-lines is discussed [36]. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only....

  13. Periodic arrays of deep nanopores made in silicon with reactive ion etching and deep UV lithography

    Woldering, Leon A; Tjerkstra, R Willem; Vos, Willem L; Jansen, Henri V; Setija, Irwan D

    2008-01-01

    We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF 6 , optimized for the formation of deep nanopores. We have realized structures with pitches between 440 and 750 nm, pore diameters between 310 and 515 nm, and depth to diameter aspect ratios up to 16. To the best of our knowledge, this is the highest aspect ratio ever reported for arrays of nanopores in silicon made with a reactive ion etching process. Our experimental results show that the etching rate of the nanopores is aspect-ratio-dependent, and is mostly influenced by the angular distribution of the etching ions. Furthermore we show both experimentally and theoretically that, for sub-micrometer structures, reducing the sidewall erosion is the best way to maximize the aspect ratio of the pores. Our structures have potential applications in chemical sensors, in the control of liquid wetting of surfaces, and as capacitors in high-frequency electronics. We demonstrate by means of optical reflectivity that our high-quality structures are very well suited as photonic crystals. Since the process studied is compatible with existing CMOS semiconductor fabrication, it allows for the incorporation of the etched arrays in silicon chips

  14. Optical constants of silicon-like (Si:Ox:Cy:Hz) thin films deposited on quartz using hexamethyldisiloxane in a remote RF hollow cathode discharge plasma

    Saloum, S.; Naddaf, M.

    2008-01-01

    Deposition of amorphous silicon-like (Si:O x :C y :H z ) thin films in a remote RF hollow cathode discharge plasma using Hexamethyldisoloxane as monomer and Ar as feed gas; has been investigated for films optical constants and plasma diagnostic as a function of RF power (100-300 W) and precursor flow rate (1-10 sccm). Plasma diagnostic has been performed using optical emission spectroscopy (OES). The optical constants (refractive index, extinction coefficient and dielectric constant) have been obtained by reflection/transmission measurements in the range 300-700 nm. It is found that the refractive index increases from 1.92 to 1.97 with increasing power from 100 to 300 W, and from 1.70 to 1.92 with increasing precursor flow rate from 1 to 10 sccm. The optical energy-band gap E g and the optical-absorption tail ΔE have been estimated from optical absorption spectra, it is found that E g decreases from 3.28 eV to 3.14 eV with power increase from 100 to 300 W, and from 3.54 eV to 3.28 eV with precursor flow rate increase from 1 to 10 sccm. ΔE is found to increase with applied RF power and precursor flow rate increase. The dependence of optical constants on deposition parameters has been correlated to plasma OES. (author)

  15. Collective optical Kerr effect exhibited by an integrated configuration of silicon quantum dots and gold nanoparticles embedded in ion-implanted silica

    Torres-Torres, C; López-Suárez, A; Oliver, A; Can-Uc, B; Rangel-Rojo, R; Tamayo-Rivera, L

    2015-01-01

    The study of the third-order optical nonlinear response exhibited by a composite containing gold nanoparticles and silicon quantum dots nucleated by ion implantation in a high-purity silica matrix is presented. The nanocomposites were explored as an integrated configuration containing two different ion-implanted distributions. The time-resolved optical Kerr gate and z-scan techniques were conducted using 80 fs pulses at a 825 nm wavelength; while the nanosecond response was investigated by a vectorial two-wave mixing method at 532 nm with 1 ns pulses. An ultrafast purely electronic nonlinearity was associated to the optical Kerr effect for the femtosecond experiments, while a thermal effect was identified as the main mechanism responsible for the nonlinear optical refraction induced by nanosecond pulses. Comparative experimental tests for examining the contribution of the Au and Si distributions to the total third-order optical response were carried out. We consider that the additional defects generated by consecutive ion irradiations in the preparation of ion-implanted samples do not notably modify the off-resonance electronic optical nonlinearities; but they do result in an important change for near-resonant nanosecond third-order optical phenomena exhibited by the closely spaced nanoparticle distributions. (paper)

  16. Optical gain at 1.53 {mu}m in Er{sup 3+}-Yb{sup 3+} co-doped porous silicon waveguides

    Najar, A. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, BP 80518, 22305 Lannion Cedex (France); Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 El Manar, Tunis (Tunisia)], E-mail: najar.adel@laposte.net; Charrier, J. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, BP 80518, 22305 Lannion Cedex (France); Ajlani, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 El Manar, Tunis (Tunisia); Lorrain, N.; Haesaert, S. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, BP 80518, 22305 Lannion Cedex (France); Oueslati, M. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 El Manar, Tunis (Tunisia); Haji, L. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, BP 80518, 22305 Lannion Cedex (France)

    2008-01-15

    Erbium-ytterbium (Er-Yb)-co-doped porous silicon planar waveguides were prepared from P{sup +}-type (1 0 0) oriented silicon wafer. Erbium and ytterbium ions were electrochemically introduced into the porous structure of the waveguide core. The doping profiles of erbium and ytterbium ions were determined by EDX analysis performed on sample cross-section. The mean concentration in the guiding layer is of about 1 x 10{sup 20} cm{sup -3}. The refractive indices were measured from co-doped porous silicon and undoped waveguides after the thermal treatments. The photoluminescence (PL) peak of optically activated erbium ions at 1.53 {mu}m was recorded. The PL enhancement is the result of the energy transfer from the excited state of Yb to the state of Er. Optical losses at 1.55 {mu}m were measured on these waveguides and were of about 2 dB/cm. An internal gain at 1.53 {mu}m of 5.8 dB/cm has been measured with a pump power of 65 mW at 980 nm.

  17. Polycrystalline La1-xSrxMnO3 films on silicon: Influence of post-Deposition annealing on structural, (Magneto-)Optical, and (Magneto-)Electrical properties

    Thoma, Patrick; Monecke, Manuel; Buja, Oana-Maria; Solonenko, Dmytro; Dudric, Roxana; Ciubotariu, Oana-Tereza; Albrecht, Manfred; Deac, Iosif G.; Tetean, Romulus; Zahn, Dietrich R. T.; Salvan, Georgeta

    2018-01-01

    The integration of La1-xSrxMnO3 (LSMO) thin film technology into established industrial silicon processes is regarded as challenging due to lattice mismatch, thermal expansion, and chemical reactions at the interface of LSMO and silicon. In this work, we investigated the physical properties of thin La0.73Sr0.27MnO3 films deposited by magnetron sputtering on silicon without a lattice matching buffer layer. The influence of a post-deposition annealing treatment on the structural, (magneto-)optical, and (magneto-)electrical properties was investigated by a variety of techniques. Using Rutherford backscattering spectroscopy, atomic force microscopy, Raman spectroscopy, and X-ray diffraction we could show that the thin films exhibit a polycrystalline, rhombohedral structure after a post-deposition annealing of at least 700 °C. The dielectric tensor in the spectral range from 1.7 eV to 5 eV determined from spectroscopic ellipsometry in combination with magneto-optical Kerr effect spectroscopy was found to be comparable to that of lattice matched films on single crystal substrates reported in literature [1]. The values of the metal-isolator transition temperature and temperature-dependent resistivities also reflect a high degree of crystalline quality of the thermally treated films.

  18. Silicon MIS diodes with Cr2O3 nanofilm: Optical, morphological/structural and electronic transport properties

    Erdogan, Ibrahim Y.; Guellue, O.

    2010-01-01

    In this work we report the optical, morphological and structural characterization and diode application of Cr 2 O 3 nanofilms grown on p-Si substrates by spin coating and annealing process. X-ray diffraction (XRD), non-contact mode atomic force microscopy (NC-AFM), ultraviolet-visible (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy were used for characterization of nanofilms. For Cr 2 O 3 nanofilms, the average particle size determined from XRD and NC-AFM measurements was approximately 70 nm. Structure analyses of nanofilms demonstrate that the single phase Cr 2 O 3 on silicon substrate is of high a crystalline structure with a dominant in hexagonal (1 1 0) orientation. The morphologic analysis of the films indicates that the films formed from hexagonal nanoparticles are with low roughness and uniform. UV-vis absorption measurements indicate that the band gap of the Cr 2 O 3 film is 3.08 eV. The PL measurement shows that the Cr 2 O 3 nanofilm has a strong and narrow ultraviolet emission, which facilitates potential applications in future photoelectric nanodevices. Au/Cr 2 O 3 /p-Si metal/interlayer/semiconductor (MIS) diodes were fabricated for investigation of the electronic properties such as current-voltage and capacitance-voltage. Ideality factor and barrier height for Au//Cr 2 O 3 /p-Si diode were calculated as 2.15 eV and 0.74 eV, respectively. Also, interfacial state properties of the MIS diode were determined. The interface-state density of the MIS diode was found to vary from 2.90 x 10 13 eV -1 cm -2 to 8.45 x 10 12 eV -1 cm -2 .

  19. Optical data exchange of m-QAM signals using a silicon-organic hybrid slot waveguide: proposal and simulation.

    Gui, Chengcheng; Wang, Jian

    2014-10-06

    We present modulation-format-transparent data exchange for m-ary quadrature amplitude modulation (m-QAM) signals using a single silicon-organic hybrid slot waveguide which offers tight light confinement and enhanced nonlinearity. By exploiting the parametric depletion effect of non-degenerate four-wave mixing (ND-FWM) process in the slot waveguide, we simulate low-power (exchange of 640 Gbaud (2.56 Tbit/s) optical time-division multiplexed (OTDM) 16-QAM and 640 Gbaud (3.84 Tbit/s) OTDM 64-QAM signals and characterize the operation performance in terms of error vector magnitude (EVM) and bit-error rate (BER). The calculated signal-to-noise ratio (SNR) penalties of data exchange are negligible for 2.56 Tbit/s 16-QAM signals and less than 2 dB for 3.84 Tbit/s 64-QAM signals at a BER of 2e-3. For a given pump power of 9 mW, the operation performance dependence on the waveguide length is studied, showing an optimized waveguide length of ~17 mm. For a given waveguide length of 17 mm, the SNR penalty of data exchange, at a BER of 2e-3, is kept below 4 dB when varying input pump power from 8.4 to 9.8 mW for 2.56 Tbit/s 16-QAM and from 8.9 to 9.2 mW for 3.84 Tbit/s 64-QAM. In addition, data exchange running at low speed (e.g. 20 Gbaud) and data exchange taking into account waveguide propagation loss are also analyzed with favorable operation performance.

  20. Enhancement of the optical Kerr effect exhibited by an integrated configuration of silicon quantum dots and silver nanoparticles

    Lopez-Suarez, A; Benami, A; Tamayo-Rivera L; Reyes-Esqueda, J A; Cheang-Wong, J C; Rodriguez-Fernandez, L; Crespo-Sosa, A; Oliver, A; R Rangel-Rojo; Torres-Torres, C

    2011-01-01

    We present nonlinear refractive results for three different systems produced by ion implantation: high purity silica substrates with silicon quantum dots (Si-QDs), silver nanoparticles (Ag-NPs), and one sample containing both. We used a femtosecond optical Kerr gate (OKG) with 80 fs pulses at 830 nm to investigate the magnitude and response time of their nonlinear response. The Ag-NPs samples were prepared implanting 2 MeV Ag 2+ ions at different fluencies. A sample with 1x10 17 ions/cm 2 showed no discernible Kerr signal, while for one with 2.4x10 17 ions/cm 2 we measured |χ (3) | 1111 = 5.1x10 -11 esu. The Si-QDs sample required irradiation with 1.5 MeV Si 2+ ions, at a 2.5x10 17 ions/cm 2 fluence in order that the OKG results for this sample yielded a similar |χ (3) | 1111 value. The sample containing the Si-QDs was then irradiated by 1 MeV Ag2+ ions at a 4.44 x 10 16 ions/cm 2 fluence and thermally treated, for which afterward we measured |χ (3) | 1111 1.7x10 -10 esu. In all cases the response time was quasi-instantaneous. These results imply that the inclusion of Ag-NPs at low fluence, enhances the nonlinearity of the composite by a factor of around three, and that this is purely electronic in nature. Pump-probe results show that there is not any nonlinear absorption present. We estimate that the confinement effect of the Si-QDs in the sample plays an important role for the excitation of the Surface Plasmon Resonance (SPR) related to the Ag-NPs. A theoretical model that describes the modification of the third order nonlinearity is also presented.

  1. Nonlinear silicon photonics

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  2. Studies on linear, nonlinear optical and excited state dynamics of silicon nanoparticles prepared by picosecond laser ablation

    Syed Hamad

    2015-12-01

    Full Text Available We report results from our studies on the fabrication and characterization of silicon (Si nanoparticles (NPs and nanostructures (NSs achieved through the ablation of Si target in four different liquids using ∼2 picosecond (ps pulses. The consequence of using different liquid media on the ablation of Si target was investigated by studying the surface morphology along with material composition of Si based NPs. The recorded mean sizes of these NPs were ∼9.5 nm, ∼37 nm, ∼45 nm and ∼42 nm obtained in acetone, water, dichloromethane (DCM and chloroform, respectively. The generated NPs were characterized by selected area electron diffraction (SAED, high resolution transmission microscopy (HRTEM, Raman spectroscopic techniques and Photoluminescence (PL studies. SAED, HRTEM and Raman spectroscopy data confirmed that the material composition was Si NPs in acetone, Si/SiO2 NPs in water, Si-C NPs in DCM and Si-C NPs in chloroform and all of them were confirmed to be polycrystalline in nature. Surface morphological information of the fabricated Si substrates was obtained using the field emission scanning electron microscopic (FESEM technique. FESEM data revealed the formation of laser induced periodic surface structures (LIPSS for the case of ablation in acetone and water while random NSs were observed for the case of ablation in DCM and chloroform. Femtosecond (fs nonlinear optical properties and excited state dynamics of these colloidal Si NPs were investigated using the Z-scan and pump-probe techniques with ∼150 fs (100 MHz and ∼70 fs (1 kHz laser pulses, respectively. The fs pump-probe data obtained at 600 nm consisted of single and double exponential decays which were tentatively assigned to electron-electron collisional relaxation (1 ps. Large third order optical nonlinearities (∼10−14 e.s.u. for these colloids have been estimated from Z-scan data at an excitation wavelength of 680 nm suggesting that the colloidal Si NPs find

  3. Studies on linear, nonlinear optical and excited state dynamics of silicon nanoparticles prepared by picosecond laser ablation

    Hamad, Syed; Nageswara Rao, S. V. S.; Pathak, A. P. [School of Physics, University of Hyderabad, Hyderabad 500046, Telangana (India); Krishna Podagatlapalli, G.; Mounika, R.; Venugopal Rao, S., E-mail: soma-venu@yahoo.com, E-mail: soma-venu@uohyd.ac.in [Advanced Center of Research in High Energy Materials (ACRHEM), University of Hyderabad, Hyderabad 500046, Telangana (India)

    2015-12-15

    We report results from our studies on the fabrication and characterization of silicon (Si) nanoparticles (NPs) and nanostructures (NSs) achieved through the ablation of Si target in four different liquids using ∼2 picosecond (ps) pulses. The consequence of using different liquid media on the ablation of Si target was investigated by studying the surface morphology along with material composition of Si based NPs. The recorded mean sizes of these NPs were ∼9.5 nm, ∼37 nm, ∼45 nm and ∼42 nm obtained in acetone, water, dichloromethane (DCM) and chloroform, respectively. The generated NPs were characterized by selected area electron diffraction (SAED), high resolution transmission microscopy (HRTEM), Raman spectroscopic techniques and Photoluminescence (PL) studies. SAED, HRTEM and Raman spectroscopy data confirmed that the material composition was Si NPs in acetone, Si/SiO{sub 2} NPs in water, Si-C NPs in DCM and Si-C NPs in chloroform and all of them were confirmed to be polycrystalline in nature. Surface morphological information of the fabricated Si substrates was obtained using the field emission scanning electron microscopic (FESEM) technique. FESEM data revealed the formation of laser induced periodic surface structures (LIPSS) for the case of ablation in acetone and water while random NSs were observed for the case of ablation in DCM and chloroform. Femtosecond (fs) nonlinear optical properties and excited state dynamics of these colloidal Si NPs were investigated using the Z-scan and pump-probe techniques with ∼150 fs (100 MHz) and ∼70 fs (1 kHz) laser pulses, respectively. The fs pump-probe data obtained at 600 nm consisted of single and double exponential decays which were tentatively assigned to electron-electron collisional relaxation (<1 ps) and non-radiative transitions (>1 ps). Large third order optical nonlinearities (∼10{sup −14} e.s.u.) for these colloids have been estimated from Z-scan data at an excitation wavelength of 680 nm

  4. ESA-led ATHENA/IXO optics development status

    Bavdaz, Marcos; Rando, Nicola; Wille, Eric

    2011-01-01

    , under the name of ATHENA (Advanced Telescope for High Energy Astrophysics), with possible participation of NASA and JAXA. The mission is building on the novel Silicon Pore Optics (SPO) technology to achieve the required performance for this demanding astrophysics observatory. This technology is being...... developed by an industrial consortium, and involves also several research institutes [1-12]. A second optics technology, slumped glass optics (SGO), which is being developed in Europe and the USA, was the backup technology for IXO, and additionally work is progressing on improved reflective coatings and X...

  5. Element depth profiles of porous silicon

    Kobzev, A.P.; Nikonov, O.A.; Kulik, M.; Zuk, J.; Krzyzanowska, H.; Ochalski, T.J.

    1997-01-01

    Element depth profiles of porous silicon were measured on the Van-de-Graaff accelerator in the energy range of 4 He + ions from 2 to 3.2 MeV. Application of complementary RBS, ERD and 16 O(α,α) 16 O nuclear reaction methods permits us to obtain: 1) the exact silicon, oxygen and hydrogen distribution in the samples, 2) the distribution of partial pore concentrations. The oxygen concentration in porous silicon reaches 30%, which allows one to assume the presence of silicon oxide in the pores and to explain the spectrum shift of luminescence into the blue area

  6. Effect of Pore Thickness and the State of Polarization on the Optical Properties of Hexagonal Nanoarray of Au/Nanoporous Anodic Alumina Membrane

    Mohamed Shaban

    2015-01-01

    Full Text Available Hexagonal nanoarrays of Au particles were deposited on nanoporous anodic alumina membrane (NAAM utilizing r.f. magnetron sputtering. The thickness of the NAAMs is adjusted by changing the second anodization time from 5 min to 20 min. The surface morphology, composition, and optical properties are characterized by using SEM, EDX, and spectrophotometer, respectively. The effects of the NAAM thickness and state of polarization on the morphological changes and on the optical properties of the fabricated nanoarrays were addressed. According to the measured optical spectra, the rate of decrease of NAAMs refractive index was found to be 3.825 × 10−4 nm−1. Using the modified Kubelka-Munk radiative transfer model, the energy gap of NAAMs was calculated from diffused reflectance and was decreased from 1.682 to 1.376 as the anodization time increased from 5 to 20 min. Also, the saturation of interference fringes is substantially enhanced, and field enhancement can be achieved due to the excitation and constructive interference of surface plasmon waves by coating NAAMs with the hexagonal nanoarrays of Au. Based on the advantages of the fabrication approach and the enhanced and controlled properties, this new generation of samples can be used as promising building blocks for nanophotonic and nanoelectronics devices.

  7. Structural, optical and mechanical properties of thin diamond and silicon carbide layers grown by low pressure microwave linear antenna plasma enhanced chemical vapour deposition

    Taylor, Andrew; Drahokoupil, Jan; Fekete, Ladislav; Klimša, Ladislav; Kopeček, Jaromír; Purkrt, Adam; Remeš, Zdeněk; Čtvrtlík, Radim; Tomáštík, Jan; Frank, Otakar; Janíček, P.; Mistrík, J.; Mortet, Vincent

    2016-01-01

    Roč. 69, Oct (2016), s. 13-18 ISSN 0925-9635 R&D Projects: GA MŠk LO1409; GA TA ČR TA03010743; GA ČR GA13-31783S; GA MŠk(CZ) LD14011; GA MŠk LM2015088 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568; AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 ; RVO:61388955 Keywords : diamond * silicon carbide * adherence * mechanical properties * optical properties Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) Impact factor: 2.561, year: 2016

  8. Silicon photonic integration in telecommunications

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  9. The ATHENA telescope and optics status

    Bavdaz, Marcos; Wille, Eric; Ayre, Mark; Ferreira, Ivo; Shortt, Brian; Fransen, Sebastiaan; Collon, Maximilien; Vacanti, Giuseppe; Barriere, Nicolas; Landgraf, Boris; Haneveld, Jeroen; van Baren, Coen; Zuknik, Karl-Heintz; Della Monica Ferreira, Desiree; Massahi, Sonny; Christensen, Finn; Krumrey, Michael; Burwitz, Vadim; Pareschi, Giovanni; Spiga, Daniele; Valsecchi, Giuseppe; Vernani, Dervis; Oliver, Paul; Seidel, André

    2017-08-01

    The work on the definition and technological preparation of the ATHENA (Advanced Telescope for High ENergy Astrophysics) mission continues to progress. In parallel to the study of the accommodation of the telescope, many aspects of the X-ray optics are being evolved further. The optics technology chosen for ATHENA is the Silicon Pore Optics (SPO), which hinges on technology spin-in from the semiconductor industry, and uses a modular approach to produce large effective area lightweight telescope optics with a good angular resolution. Both system studies and the technology developments are guided by ESA and implemented in industry, with participation of institutional partners. In this paper an overview of the current status of the telescope optics accommodation and technology development activities is provided.

  10. Enhancement of the optical Kerr effect exhibited by an integrated configuration of silicon quantum dots and silver nanoparticles

    Lopez-Suarez, A; Benami, A; Tamayo-Rivera L; Reyes-Esqueda, J A; Cheang-Wong, J C; Rodriguez-Fernandez, L; Crespo-Sosa, A; Oliver, A [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, D. F. 04510 (Mexico); R Rangel-Rojo [Departamento de Optica, Centro de Investigacion CientIfica y de Educacion Superior de Ensenada, Apartado Postal 2732, Ensenada, BC 22860 (Mexico); Torres-Torres, C, E-mail: rrangel@cicese.mx [Seccion de Estudios de Posgrado e Investigacion, ESIME-Z, Instituto Politecnico Nacional, D.F. 07738 (Mexico)

    2011-01-01

    We present nonlinear refractive results for three different systems produced by ion implantation: high purity silica substrates with silicon quantum dots (Si-QDs), silver nanoparticles (Ag-NPs), and one sample containing both. We used a femtosecond optical Kerr gate (OKG) with 80 fs pulses at 830 nm to investigate the magnitude and response time of their nonlinear response. The Ag-NPs samples were prepared implanting 2 MeV Ag{sup 2+} ions at different fluencies. A sample with 1x10{sup 17} ions/cm{sup 2} showed no discernible Kerr signal, while for one with 2.4x10{sup 17} ions/cm{sup 2} we measured |{chi}{sup (3)}|{sub 1111} = 5.1x10{sup -11} esu. The Si-QDs sample required irradiation with 1.5 MeV Si{sup 2+} ions, at a 2.5x10{sup 17} ions/cm{sup 2} fluence in order that the OKG results for this sample yielded a similar |{chi}{sup (3)}|{sub 1111} value. The sample containing the Si-QDs was then irradiated by 1 MeV Ag2+ ions at a 4.44 x 10{sup 16} ions/cm{sup 2} fluence and thermally treated, for which afterward we measured |{chi}{sup (3)}|{sub 1111} 1.7x10{sup -10} esu. In all cases the response time was quasi-instantaneous. These results imply that the inclusion of Ag-NPs at low fluence, enhances the nonlinearity of the composite by a factor of around three, and that this is purely electronic in nature. Pump-probe results show that there is not any nonlinear absorption present. We estimate that the confinement effect of the Si-QDs in the sample plays an important role for the excitation of the Surface Plasmon Resonance (SPR) related to the Ag-NPs. A theoretical model that describes the modification of the third order nonlinearity is also presented.

  11. Results from Coupled Optical and Electrical Sentaurus TCAD Models of a Gallium Phosphide on Silicon Electron Carrier Selective Contact Solar Cell

    Limpert, Steven; Ghosh, Kunal; Wagner, Hannes; Bowden, Stuart; Honsberg, Christiana; Goodnick, Stephen; Bremner, Stephen; Green, Martin

    2014-06-09

    We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell. Detailed analyses of current and voltage performance are presented for devices having substrate thicknesses of 10 μm, 50 μm, 100 μm and 150 μm, and with GaP/Si interfacial quality ranging from very poor to excellent. Ultimate potential performance was investigated using optical absorption profiles consistent with light trapping schemes of random pyramids with attached and detached rear reflector, and planar with an attached rear reflector. Results indicate Auger-limited open-circuit voltages up to 787 mV and efficiencies up to 26.7% may be possible for front-contacted devices.

  12. The effect of threading dislocations on optical absorption and electron scattering in strongly mismatched heteroepitaxial III-V compound semiconductors on silicon

    Peiner, E; Wehmann, H H

    2002-01-01

    The effect of threading dislocations on the optical and electrical properties of InP and GaAs heteroepitaxial layers on (001) silicon was investigated. Charged deep states act as scattering centres for electrons, thus affecting the electron mobility at low temperatures. The electric field arising from charged dislocations causes enhanced optical absorption at wavelengths near the fundamental absorption edge. The mean charge of the threading dislocations in GaAs/Si was found to be considerably higher than that for InP/Si. A model is described relating this effect to a regular arrangement of alpha-type 60 deg. dislocations at extended twin defects which were observed in InP/Si but were absent in GaAs/Si.

  13. An integrated optic ethanol vapor sensor based on a silicon-on-insulator microring resonator coated with a porous ZnO film.

    Yebo, Nebiyu A; Lommens, Petra; Hens, Zeger; Baets, Roel

    2010-05-24

    Optical structures fabricated on silicon-on-insulator technology provide a convenient platform for the implementation of highly compact, versatile and low cost devices. In this work, we demonstrate the promise of this technology for integrated low power and low cost optical gas sensing. A room temperature ethanol vapor sensor is demonstrated using a ZnO nanoparticle film as a coating on an SOI micro-ring resonator of 5 microm in radius. The local coating on the ring resonators is prepared from colloidal suspensions of ZnO nanoparticles of around 3 nm diameter. The porous nature of the coating provides a large surface area for gas adsorption. The ZnO refractive index change upon vapor adsorption shifts the microring resonance through evanescent field interaction. Ethanol vapor concentrations down to 100 ppm are detected with this sensing configuration and a detection limit below 25 ppm is estimated.

  14. Silicon photonic integrated circuit swept-source optical coherence tomography receiver with dual polarization, dual balanced, in-phase and quadrature detection.

    Wang, Zhao; Lee, Hsiang-Chieh; Vermeulen, Diedrik; Chen, Long; Nielsen, Torben; Park, Seo Yeon; Ghaemi, Allan; Swanson, Eric; Doerr, Chris; Fujimoto, James

    2015-07-01

    Optical coherence tomography (OCT) is a widely used three-dimensional (3D) optical imaging method with many biomedical and non-medical applications. Miniaturization, cost reduction, and increased functionality of OCT systems will be critical for future emerging clinical applications. We present a silicon photonic integrated circuit swept-source OCT (SS-OCT) coherent receiver with dual polarization, dual balanced, in-phase and quadrature (IQ) detection. We demonstrate multiple functional capabilities of IQ polarization resolved detection including: complex-conjugate suppressed full-range OCT, polarization diversity detection, and polarization-sensitive OCT. To our knowledge, this is the first demonstration of a silicon photonic integrated receiver for OCT. The integrated coherent receiver provides a miniaturized, low-cost solution for SS-OCT, and is also a key step towards a fully integrated high speed SS-OCT system with good performance and multi-functional capabilities. With further performance improvement and cost reduction, photonic integrated technology promises to greatly increase penetration of OCT systems in existing applications and enable new applications.

  15. Comparison of confinement characters between porous silicon and silicon nanowires

    Tit, Nacir; Yamani, Zain H.; Pizzi, Giovanni; Virgilio, Michele

    2011-01-01

    Confinement character and its effects on photoluminescence (PL) properties are theoretically investigated and compared between porous silicon (p-Si) and silicon nanowires (Si-NWs). The method is based on the application of the tight-binding technique using the minimal sp 3 -basis set, including the second-nearest-neighbor interactions. The results show that the quantum confinement (QC) is not entirely controlled by the porosity, rather it is mainly affected by the average distance between pores (d). The p-Si is found to exhibit weaker confinement character than Si-NWs. The confinement energy of charge carriers decays against d exponentially for p-Si and via a power-law for Si-NWs. This latter type of QC is much stronger and is somewhat similar to the case of a single particle in a quantum box. The excellent fit to the PL data demonstrates that the experimental samples of p-Si do exhibit strong QC character and thus reveals the possibility of silicon clustering into nano-crystals and/or nanowires. Furthermore, the results show that the passivation of the surface dangling bonds by the hydrogen atoms plays an essential role in preventing the appearance of gap states and consequently enhances the optical qualities of the produced structures. The oscillator strength (OS) is found to increase exponentially with energy in Si-NWs confirming the strong confinement character of carriers. Our theoretical findings suggest the existence of Si nanocrystals (Si-NCs) of sizes 1-3 nm and/or Si-NWs of cross-sectional sizes in the 1-3 nm range inside the experimental p-Si samples. The experimentally-observed strong photoluminescence from p-Si should be in favor of an exhibition of 3D-confinement character. The favorable comparison of our theoretical results with the experimental data consolidates our above claims. -- Highlights: → Tight-binding is used to study quantum-confinement (QC) effects in p-Si and Si-NWs. → QC is not entirely controlled by the porosity but also by the d

  16. Reactive Melt Infiltration Of Silicon Into Porous Carbon

    Behrendt, Donald R.; Singh, Mrityunjay

    1994-01-01

    Report describes study of synthesis of silicon carbide and related ceramics by reactive melt infiltration of silicon and silicon/molybdenum alloys into porous carbon preforms. Reactive melt infiltration has potential for making components in nearly net shape, performed in less time and at lower temperature. Object of study to determine effect of initial pore volume fraction, pore size, and infiltration material on quality of resultant product.

  17. Silicon oxynitride based photonics

    Worhoff, Kerstin; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M.; Jaworski, M.; Zdanowicz, M.

    2008-01-01

    Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material

  18. Porous silicon: some new applications of this material with astonishing properties; Le silicium poreux: nouvelles applications de ce materiau aux proprietes remarquables

    Gauthier-Manuel, B. [Laboratoire FEMTO-ST, Dept. MN2S, CNRS UMR 6174, 25 - Besancon (France)

    2009-02-15

    Anodic oxidation of silicon wafer in fluor-hydric acid solution leads to a porous material with surprising properties. Structures at nano-metric scale are source of deep photoluminescence. The very large scale of pore size available and the high specific surface obtained allows optical and microfabrication applications. This paper describes the electrochemical process of this material, some characterization methods, and some new applications in the fields of micro-energy and molecular separation. (author)

  19. Periodically poled silicon

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  20. Strained Silicon Photonics

    Ralf B. Wehrspohn

    2012-05-01

    Full Text Available A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.