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Sample records for silicon photodiode array

  1. The Use of Self-scanned Silicon Photodiode Arrays for Astronomical Spectrophotometry

    Science.gov (United States)

    Cochran, A. L.

    1984-01-01

    The use of a Reticon self scanned silicon photodiode array for precision spectrophotometry is discussed. It is shown that internal errors are + or - 0.003 mag. Observations obtained with a photodiode array are compared with observations obtained with other types of detectors with agreement, from 3500 A to 10500 A, of 1%. The photometric properties of self scanned photodiode arrays are discussed. Potential pitfalls are given.

  2. Performance of a PET detector module utilizing an array of silicon photodiodes to identify the crystal of interaction

    International Nuclear Information System (INIS)

    Moses, W.W.; Derenzo, S.E.; Nutt, R.; Digby, W.M.; Williams, C.W.; Andreaco, M.

    1993-01-01

    The authors initial performance results for a new multi-layer PET detector module consisting of an array of 3 mm square by 30 mm deep BGO crystals coupled on one end to a single photomultiplier tube and on the opposite end to an array of 3 mm square silicon photodiodes. The photomultiplier tube provides an accurate timing pulse and energy discrimination for all the crystals in the module, while the silicon photodiodes identify the crystal of interaction. When a single BGO crystal at +25 C is excited with 511 keV photons, the authors measure a photodiode signal centered at 700 electrons (e - ) with noise of 375 e - fwhm. When a four crystal/photodiode module is excited with a collimated line source of 511 keV photons, the crystal of interaction is correctly identified 82% of the time. The misidentification rate can be greatly reduced and an 8 x 8 crystal/photodiode module constructed by using thicker depletion layer photodiodes or cooling to 0 C

  3. Development of a PET detector module incorporating a silicon photodiode array

    International Nuclear Information System (INIS)

    Rosenfeld, A.B.; Takacs, G.J.; Lerch, M.L.F.; Simmonds, P.E.

    2000-01-01

    Full text: We are developing a new Positron Emission Tomography (PET) detection sub-module with depth of interaction capability. The new sub-module is simple and robust to minimise module assembly complications and is completely independent of photomultiplier tubes. The new sub-module has also been designed to maximise its flexibility for easy sub-module coupling so as to form a complete, customised, detection module to be used in PET scanners dedicated to human brain and breast, and small animal studies. Blue enhanced, silicon 8x8 detector arrays are used to read out the scintillation crystals, and form the basis of the new module. The new detectors were designed by the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong in collaboration with the High Energy Physics Department, University of Melbourne and produced by SPO D etector , Ukraine. Complementing the work on the silicon photodetectors, we have also carried out simulations of the propagation of the scintillation light in the crystals, and the effect of crystal dimensions and surface treatment on the distribution of light detected by the photodiode array. The distribution of light over the photodiodes has then been used to test various algorithms for calculating the point of interaction of the gamma ray in the crystal. Simulations of the light propagation show that for a crystal of dimensions 25mm x 25mm x 3mm, it is possible to determine the point of interaction in 2 dimensions with an average accuracy of just over 0.5mm. The resulting photon distribution detected by the array. The surface treatment, while having a large effect on the light output, does not have a great effect on the accuracy. If these dimensions change to 25mm x 25mm x 6mm then the surface conditions have a greater effect on the accuracy. It is possible however, with careful surface treatment, to achieve an accuracy of around 0.6mm, only marginally worse than the case for the 3mm thick crystal. Gamma ray

  4. Readout and characterisation of new silicon pixel photodiode array for use in PET

    International Nuclear Information System (INIS)

    Hooper, P.; Ward, G.; Lerch, R.; Rozenfeld, A.

    2002-01-01

    Full text: Positron emission tomography (PET) is a functional imaging tool, which is able to quantify physiological, and biochemical processes in vivo using short-lived cyclotron-produced radiotracers. The main physical principle of PET is the simultaneous measurement of two 511 keV photons which are emitted in opposite directions following the annihilation of a positron in tissue. The accuracy of tracking these photons determines the accuracy of localising the radiotracer in the body, which is referred to as the spatial resolution of the system. Compared with conventional single photon imaging with gamma cameras, PET provides superior spatial resolution and sensitivity. However, compared with anatomical imaging techniques, the spatial resolution remains relatively poor at approximately 4-6 mm full width at half maximum (FWHM), compared with 1 mm FWHM for MRI. The Centre for Medical Radiation Physics at the University of Wollongong is developing a new Positron Emission Tomography (PET) detection sub-module that will significantly improve the spatial resolution of PET. The new sub-module design is simple and robust to minimise module assembly complications and is completely independent of photomultiplier tubes. The new sub-module has also been designed to maximise its flexibility for easy sub-module coupling so as to form a complete, customised, detection module to be used in PET scanners dedicated to human brain and breast, and small animal studies. A new computer controlled gantry allows the system to be used for PET and SPECT applications. Silicon 8x8 detector arrays have been developed by CMRP and will be optically coupled scintillation crystals and readout using the VIKING tM hybrid preamplifier chip to form the basis of the new module Characterisation of the pixel photodiode array has been performed to check the uniformity of the response of the array. This characterisation has been done using a pulsed, near infra-red laser diode system and alpha particles

  5. New silicon photodiodes for detection of the 1064nm wavelength radiation

    Science.gov (United States)

    Wegrzecki, Maciej; Piotrowski, Tadeusz; Puzewicz, Zbigniew; Bar, Jan; Czarnota, Ryszard; Dobrowolski, Rafal; Klimov, Andrii; Kulawik, Jan; Kłos, Helena; Marchewka, Michał; Nieprzecki, Marek; Panas, Andrzej; Seredyński, Bartłomiej; Sierakowski, Andrzej; Słysz, Wojciech; Synkiewicz, Beata; Szmigiel, Dariusz; Zaborowski, Michał

    2016-12-01

    In this paper a concept of a new bulk structure of p+-υ-n+ silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8-segment photodiode and the 32-element linear photodiode array that were developed according to the concept are described. Electric and photoelectric parameters of the photodiodes mentioned above are presented.

  6. Nuclear resonant scattering measurements on (57)Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector.

    Science.gov (United States)

    Kishimoto, S; Mitsui, T; Haruki, R; Yoda, Y; Taniguchi, T; Shimazaki, S; Ikeno, M; Saito, M; Tanaka, M

    2014-11-01

    We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm(2)) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10(7) cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on (57)Fe.

  7. A radiation detector fabricated from silicon photodiode.

    Science.gov (United States)

    Yamamoto, H; Hatakeyama, S; Norimura, T; Tsuchiya, T

    1984-12-01

    A silicon photodiode is converted to a low energy charged particle radiation detector. The window thickness of the fabricated detector is evaluated to be 50 micrograms/cm2. The area of the depletion region is 13.2 mm2 and the depth of it is estimated to be about 100 microns. The energy resolution (FWHM) is 14.5 ke V for alpha-particles from 241Am and 2.5 ke V for conversion electrons from 109Cd, respectively.

  8. Nano-multiplication region avalanche photodiodes and arrays

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

    2011-01-01

    An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

  9. Compact multispectral photodiode arrays using micropatterned dichroic filters

    Science.gov (United States)

    Chandler, Eric V.; Fish, David E.

    2014-05-01

    The next generation of multispectral instruments requires significant improvements in both spectral band customization and portability to support the widespread deployment of application-specific optical sensors. The benefits of spectroscopy are well established for numerous applications including biomedical instrumentation, industrial sorting and sensing, chemical detection, and environmental monitoring. In this paper, spectroscopic (and by extension hyperspectral) and multispectral measurements are considered. The technology, tradeoffs, and application fits of each are evaluated. In the majority of applications, monitoring 4-8 targeted spectral bands of optimized wavelength and bandwidth provides the necessary spectral contrast and correlation. An innovative approach integrates precision spectral filters at the photodetector level to enable smaller sensors, simplify optical designs, and reduce device integration costs. This method supports user-defined spectral bands to create application-specific sensors in a small footprint with scalable cost efficiencies. A range of design configurations, filter options and combinations are presented together with typical applications ranging from basic multi-band detection to stringent multi-channel fluorescence measurement. An example implementation packages 8 narrowband silicon photodiodes into a 9x9mm ceramic LCC (leadless chip carrier) footprint. This package is designed for multispectral applications ranging from portable color monitors to purpose- built OEM industrial and scientific instruments. Use of an eight-channel multispectral photodiode array typically eliminates 10-20 components from a device bill-of-materials (BOM), streamlining the optical path and shrinking the footprint by 50% or more. A stepwise design approach for multispectral sensors is discussed - including spectral band definition, optical design tradeoffs and constraints, and device integration from prototype through scalable volume production

  10. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

    Science.gov (United States)

    Aull, Brian

    2016-04-08

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

  11. Low Cost silicon photodiodes for alpha spectrometry

    International Nuclear Information System (INIS)

    Khoury, H.; Lopes, A.; Hazin, C.; Lira, C.B.; Silva, E. da

    1998-01-01

    This study was carried out to evaluate the suitability of using commercially available photodiodes for alpha spectrometry, since the principle on which both operate are similar. Photodiodes are low priced compared to the commonly used semiconductor detectors making them potentially useful for research and teaching purposes. Very thin calibrated alpha sources of 2 41 A m, 2 44 C m and 2 35 U , produced at the Metrology Laboratory of IRD/CNEN, were used to test the performance of three photodiodes. The results showed that the responses of the photodiodes were linear with the alpha particle energy and that the energy resolution varied between 0,79% and 0,45%, with an efficiency of 8%. The resolution and efficiency presented by the photodiodes tested are similar to those obtained with other semiconductor detectors, evidencing that they can be used successfully as alpha detectors

  12. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    International Nuclear Information System (INIS)

    Kaminski, Yelena; Shauly, Eitan; Paz, Yaron

    2015-01-01

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect

  13. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    Energy Technology Data Exchange (ETDEWEB)

    Kaminski, Yelena [Department of Chemical Engineering, Technion, Haifa (Israel); TowerJazz Ltd. Migdal Haemek (Israel); Shauly, Eitan [TowerJazz Ltd. Migdal Haemek (Israel); Paz, Yaron, E-mail: paz@tx.technion.ac.il [Department of Chemical Engineering, Technion, Haifa (Israel)

    2015-12-07

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect.

  14. A 75 GHz silicon metal-semiconductor-metal Schottky photodiode

    International Nuclear Information System (INIS)

    Alexandrou, S.; Wang, C.; Hsiang, T.Y.; Liu, M.Y.; Chou, S.Y.

    1993-01-01

    The ultrafast characteristics of crystalline-silicon metal-semiconductor-metal (MSM) photodiodes with 300 nm finger width and spacing were measured with a subpicosecond electro-optic sampling system. Electrical responses with full width at half maximum as short as 5.5 and 11 ps, at corresponding 3 dB bandwidths of 75 and 38 GHz, were generated by violet and red photons, respectively. The difference is attributed to the photon penetration depth which is much larger than the diode finger spacing at red, but smaller at violet. Light-intensity dependence was also examined at different wavelengths, indicating a linear relation and a higher sensitivity in the violet. These results not only demonstrated the fastest silicon photodetector reported to date, but also pinpointed the dominant speed-limiting factor of silicon MSM photodiodes. A configuration is suggested to improve the speed of these detectors at long wavelengths

  15. Scintillation light read-out by thin photodiodes in silicon wells

    CERN Document Server

    Allier, C P; Sarro, P M; Eijk, C W E

    2000-01-01

    Several applications of X-ray and gamma ray imaging detectors, e.g. in medical diagnostics, require millimeter or sub-millimeter spatial resolution and good energy resolution. In order to achieve such features we have proposed a new type of camera, which takes advantage of micromachining technology. It consists of an array of scintillator crystals encapsulated in silicon wells with photodiodes at the bottom. Several parameters of the photodiode need to be optimised: uniformity and efficiency of the light detection, gain, electronic noise and breakdown voltage. In order to evaluate these parameters we have processed 3x3 arrays of 1.8 mm sup 2 , approx 10 mu m thick photodiodes using (1 0 0) wafers etched in a KOH solution. Their optical response at 675 nm wavelength is comparable to that of a 500 mu m thick silicon PIN diode. Their low light detection efficiency is compensated by internal amplification. Several scintillator materials have been positioned in the wells on top of the thin photodiodes, i.e. a 200 ...

  16. Fast neutron damage of silicon pin photodiodes

    International Nuclear Information System (INIS)

    Dabrowski, W.; Korbel, K.; Skoczen, A.

    1990-01-01

    A Hamamatsu Photonics photodiode S1723 was tested with respect to the fast neutron radiation. The device was irradiated with neutrons of energies in the range of 0.5 MeV to 12 MeV from a Po-Be source. The irradiation was performed in several steps starting from the relatively low fluence of 2.5 x 10 10 n x cm -2 . The following characteristics were measured: leakage current vs bias voltage, capacitance vs bias voltage and vs frequency, noise vs time constant of a quasigaussian shaper and spectral density of noise. Significant changes of the leakage current and of the noise were observed at the fluence of neutrons as low as 2.5 x 10 10 n x cm -2 . 8 figs., 3 tabs., 15 refs. (author)

  17. Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women' s Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

    2014-01-27

    We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

  18. Fiber optic spectrophotometer with photodiode linear array

    International Nuclear Information System (INIS)

    Blanc, F.; Vernet, P.

    1988-01-01

    Spectrophotometric measurements are used in a great number of industrial processes, in nuclear environment and with optical precision components. Especially the evolution of a chemical process or of an optical coating could be followed by these measurements. Spectrophotometers, using optical fibers to transport the signal out of the instrument make possible the measurement ''in-situ'' and in real time. The advantage of using a diode array to detect the signal is an instantaneous measurement all over the spectral range without moving parts. It allows an excellent reproductibility. The instrument is controlled by a micro computer. The spectrophotometer is described and technical performance presented. An extension using optical fibers on a ''classical'' spectrophotometer (a H.P. one) is also described and technical performance presented

  19. Electrical crosstalk in front-illuminated photodiode array with different guard ring designs for medical CT applications

    International Nuclear Information System (INIS)

    Ji Fan; Juntunen, Mikko; Hietanen, Iiro

    2009-01-01

    This paper presents electrical crosstalk studies on front-illuminated photodiode arrays for medical computed tomography (CT) applications. Crosstalk is an important factor to the system noise and image quality. The electrical crosstalk depends on silicon substrate properties and photodiode structures. The photodiode samples employed in this paper are planar processed on high-resistivity n-type silicon substrate, resulting in a p+/n-/n+ diode structure. Two types of guard ring structures are designed and applied to the same geometry of two-dimensional photodiode arrays. One structure is an n guard ring in the gap area between pixels, and the other structure is an additional p+ guard ring around each pixel together with the n guard ring. A 10 μm light spot with wavelength of 525 nm is used to scan across the surface of the photodiode array in the electrical crosstalk measurements. The electrical currents of two neighbor pixels are measured and the results are compared between two guard ring designs. The design with the p+ guard ring structure gives better electrical crosstalk suppression. Moreover, the measurement results show much smaller influence on surrounding pixels with the p+ guard ring structure in the case of disconnected pixel. Besides the electrical crosstalk, the light sensitivity within the gap area is also discussed between two guard ring designs.

  20. ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

    Science.gov (United States)

    Vasile, Stefan; Lipson, Jerold

    2012-01-01

    The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

  1. Photon-counting monolithic avalanche photodiode arrays for the super collider

    International Nuclear Information System (INIS)

    Ishaque, A.N.; Castleberry, D.E.; Rougeot, H.M.

    1994-01-01

    In fiber tracking, calorimetry, and other high energy and nuclear physics experiments, the need arises to detect an optical signal consisting of a few photons (in some cases a single photoelectron) with a detector insensitive to magnetic fields. Previous attempts to detect a single photoelectron have involved avalanche photodiodes (APDs) operated in the Geiger mode, the visible light photon counter, and a photomultiplier tube with an APD as the anode. In this paper it is demonstrated that silicon APDs, biased below the breakdown voltage, can be used to detect a signal of a few photons with conventional pulse counting circuitry at room temperature. Moderate cooling, it is further argued, could make it possible to detect a single photoelectron. Monolithic arrays of silicon avalanche photodiodes fabricated by Radiation Monitoring Devices, Inc. (RMD) were evaluated for possible use in the Super Collider detector systems. Measurements on 3 element x 3 element (2 mm pitch) APD arrays, using pulse counting circuitry with a charge sensitive amplifier (CSA) and a Gaussian filter, are reported and found to conform to a simple noise model. The model is used to obtain the optimal operating point. Experimental results are described in Section II, modeling results in Section III, and the conclusions are summarized in Section IV

  2. Experimental studies on using silicon photodiode as read-out component of CsI(Tl) crystal

    International Nuclear Information System (INIS)

    He Jingtang; Chen Duanbao; Li Zuhao; Mao Yufang; Dong Xiaoli

    1996-01-01

    Experimental studies on using silicon photodiode as the read-out component of CsI(Tl) crystal are reported. The read-out properties of two different types of silicon photodiode produced by Hamamatsu were measured, including relations between energy resolution and bias, shaping time, sensitive area of photodiode and the dimension of the crystal

  3. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    DEFF Research Database (Denmark)

    Duun, Sune Bro; Haahr, Rasmus Grønbek; Hansen, Ole

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized...

  4. The properties of ITE's silicon avalanche photodiodes within the spectral range used in scintillation detection

    CERN Document Server

    Wegrzecka, I

    1999-01-01

    The design and properties of 3 mm silicon avalanche photodiodes developed at ITE are presented. Their performance parameters within the spectral range applicable in scintillation detection (400-700 nm) are discussed and compared to those for near infrared radiation.

  5. The properties of ITE's silicon avalanche photodiodes within the spectral range used in scintillation detection

    Science.gov (United States)

    Wegrzecka, Iwona; Wegrzecki, Maciej

    1999-04-01

    The design and properties of 3 mm silicon avalanche photodiodes developed at ITE are presented. Their performance parameters within the spectral range applicable in scintillation detection (400-700 nm) are discussed and compared to those for near infrared radiation.

  6. Thermal imager based on the array light sensor device of 128×128 CdHgTe-photodiodes

    Directory of Open Access Journals (Sweden)

    Reva V. P.

    2010-08-01

    Full Text Available The results of investigation of developed thermal imager for middle (3—5 µm infrared region are presented and its applications features are discussed. The thermal imager consists of cooled to 80 K 128×128 diodes focal plane array on the base of cadmium–mercury–telluride compound and cryostat with temperature checking system. The photodiode array is bonded with readout device (silicon focal processor via indium microcontacts. The measured average value of noise equivalent temperature difference was NETD= 20±4 mK (background radiation temperature T = 300 K, field of view 2θ = 180°, the cooled diaphragm was not used.

  7. Continuous Holdup Measurements with Silicon P-I-N Photodiodes

    International Nuclear Information System (INIS)

    Bell, Z.W.; Oberer, R.B.; Williams, J.A.; Smith, D.E.; Paulus, M.J.

    2002-01-01

    We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact. Although the small size of the diodes means they are not nearly as efficient as scintillation detectors, the diodes' size does mean that a detector module, including one or more diodes, pulse shaping electronics, analog-to-digital converter, embedded microprocessor, and digital interface can be realized in a package (excluding shielding) the size of a pocket calculator. This small size, coupled with only low-voltage power requirement, completely solid-state realization, and internal control functions allows these detectors to be strategically deployed on a permanent basis, thereby reducing or eliminating the need for manual holdup measurements. In this paper, we report on the measurement of gamma and X rays from 235 U and 238 U contained in steel pipe. We describe the features of the spectra, the electronics of the device and show how a network of them may be used to improve estimates of inventory in holdup

  8. Evaluation of electrical crosstalk in high-density photodiode arrays for X-ray imaging applications

    International Nuclear Information System (INIS)

    Ji Fan; Juntunen, Mikko; Hietanen, Iiro

    2009-01-01

    Electrical crosstalk is one of the important parameters in the photodiode array detector for X-ray imaging applications, and it becomes more important when the density of the photodiode array becomes higher. This paper presents the design of the high-density photodiode array with 250 μm pitch and 50 μm gap. The electrical crosstalk of the demonstrated samples is evaluated and compared with different electrode configurations: cathode bias mode and anode bias mode. The measurement results show good electrical crosstalk, ∼0.23%, in cathode bias mode regardless of the bias voltage, and slightly decreased or increased electrical crosstalk in anode bias mode. Moreover, the quantum efficiency is also evaluated from the same samples, and it behaves similar to the electrical crosstalk. Finally, some design guidance of the high-density photodiode array is given based on the discussion.

  9. Tunneling Current Probe for Noncontract Wafer-Level Photodiode Array Testing

    National Research Council Canada - National Science Library

    Verdun, Horacio

    1999-01-01

    The Tunneling Current Probe (TCP) is an automated picometer-sensitive proximity sensor and current measurement system which measures the current through a photodiode detector array element by establishing a tunneling current...

  10. Investigation of silicon/silicon germanium multiple quantum well layers in silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Loudon, A.Y.

    2002-01-01

    Silicon single photon avalanche diodes (SPADs) are currently utilised in many single photon counting systems due to their high efficiency, fast response times, low voltage operation and potentially low cost. For fibre based applications however (at wavelengths 1.3 and 1.55μm) and eye-safe wavelength applications (>1.4μm), Si devices are not suitable due to their 1.1μm absorption edge and hence greatly reduced absorption above this wavelength. InGaAs/InP or Ge SPADs absorb at these longer wavelengths, but both require cryogenic cooling for low noise operation and III-V integration with conventional Si circuitry is difficult. Si/SiGe is currently attracting great interest for optoelectronic applications and attempts to combine Si avalanche photodiodes with Si/SiGe multiple quantum well absorbing layers have been successful. Here, an effort to utilise this material system has shown an improvement in photon counting efficiency above 1.1μm of more than 30 times compared to an all-Si control device. In addition to its longer wavelength response, this Si/SiGe device has room temperature operation, low cost fabrication and is compatible with conventional Si circuitry. (author)

  11. Pin-photodiode array for the measurement of fan-beam energy and air kerma distributions of X-ray CT scanners.

    Science.gov (United States)

    Haba, Tomonobu; Koyama, Shuji; Aoyama, Takahiko; Kinomura, Yutaka; Ida, Yoshihiro; Kobayashi, Masanao; Kameyama, Hiroshi; Tsutsumi, Yoshinori

    2016-07-01

    Patient dose estimation in X-ray computed tomography (CT) is generally performed by Monte Carlo simulation of photon interactions within anthropomorphic or cylindrical phantoms. An accurate Monte Carlo simulation requires an understanding of the effects of the bow-tie filter equipped in a CT scanner, i.e. the change of X-ray energy and air kerma along the fan-beam arc of the CT scanner. To measure the effective energy and air kerma distributions, we devised a pin-photodiode array utilizing eight channels of X-ray sensors arranged at regular intervals along the fan-beam arc of the CT scanner. Each X-ray sensor consisted of two plate type of pin silicon photodiodes in tandem - front and rear photodiodes - and of a lead collimator, which only allowed X-rays to impinge vertically to the silicon surface of the photodiodes. The effective energy of the X-rays was calculated from the ratio of the output voltages of the photodiodes and the dose was calculated from the output voltage of the front photodiode using the energy and dose calibration curves respectively. The pin-photodiode array allowed the calculation of X-ray effective energies and relative doses, at eight points simultaneously along the fan-beam arc of a CT scanner during a single rotation of the scanner. The fan-beam energy and air kerma distributions of CT scanners can be effectively measured using this pin-photodiode array. Copyright © 2016 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  12. Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

    International Nuclear Information System (INIS)

    Aruev, P N; Barysheva, Mariya M; Ber, B Ya; Zabrodskaya, N V; Zabrodskii, V V; Lopatin, A Ya; Pestov, Alexey E; Petrenko, M V; Polkovnikov, V N; Salashchenko, Nikolai N; Sukhanov, V L; Chkhalo, Nikolai I

    2012-01-01

    The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 μm is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)

  13. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    International Nuclear Information System (INIS)

    Duun, Sune; Haahr, Rasmus G; Hansen, Ole; Birkelund, Karen; Thomsen, Erik V

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized for minimizing the optical power needed in reflectance pulse oximetry. To simplify packaging, backside photodiodes are made which are compatible with assembly using surface mounting technology without pre-packaging. Quantum efficiencies up to 95% and area-specific noise equivalent powers down to 30 fW Hz -1/2 cm -1 are achieved. The photodiodes are incorporated into a wireless pulse oximetry sensor system embedded in an adhesive patch presented elsewhere as 'The Electronic Patch'. The annular photodiodes are fabricated using two masked diffusions of first boron and subsequently phosphor. The surface is passivated with a layer of silicon nitride also serving as an optical filter. As the final process, after metallization, a hole in the center of the photodiode is etched using deep reactive ion etch.

  14. Two-dimensional position sensitive silicon photodiode as a charged particle detector

    International Nuclear Information System (INIS)

    Kovacevic, K.; Zadro, M.

    1999-01-01

    A two-dimensional position sensitive silicon photodiode has been tested for measurement of position and energy of charged particles. Position nonlinearity and resolution, as well as energy resolution and ballistic deficit were measured for 5.486 MeV α-particles. The results obtained for different pulse shaping time constants are presented

  15. The role of the substrate in Graphene/Silicon photodiodes

    Science.gov (United States)

    Luongo, G.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A.

    2018-01-01

    The Graphene/Silicon (Gr/Si) junction can function as a Schottky diode with performances strictly related to the quality of the interface. Here, we focus on the substrate geometry and on its effects on Gr/Si junction physics. We fabricate and study the electrical and optical behaviour of two types of devices: one made of a Gr/Si planar junction, the second realized with graphene on an array of Si nanotips. We show that the Gr/Si flat device exhibits a reverse photocurrent higher than the forward current and achieves a photoresponsivity of 2.5 A/W. The high photoresponse is due to the charges photogenerated in Si below a parasitic graphene/SiO2/Si structure, which are injected into the Gr/Si junction region. The other device with graphene on Si-tips displays a reverse current that grows exponentially with the bias. We explain this behaviour by taking into account the tip geometry of the substrate, which magnifies the electric field and shifts the Fermi level of graphene, thus enabling fine-tuning of the Schottky barrier height. The Gr/Si-tip device achieves a higher photoresponsivity, up to 3 A/W, likely due to photocharge internal multiplication.

  16. Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor

    Energy Technology Data Exchange (ETDEWEB)

    Gidon, Pierre; Giffard, Benoit; Moussy, Norbert; Parrein, Pascale; Poupinet, Ludovic [CEA-LETI, MINATEC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2010-03-15

    We present theoretical simulation and experimental results of a new colour pixel structure. This pixel catches the light in three stacked amorphous silicon photodiodes encompassed between transparent electrodes. The optical structure has been simulated for signal optimisation. The thickness of each stacked layer is chosen in order to absorb the maximum of light and the three signals allow to linearly calculate the CIE colour coordinates 1 with minimum error and noise. The whole process is compatible with an above integrated circuit (IC) approach. Each photodiode is an n-i-p structure. For optical reason, the upper diode must be controlled down to 25 nm thickness. The first test pixel structure allows a good recovering of colour coordinates. The measured absorption spectrum of each photodiode is in good agreement with our simulations. This specific stack with three photodiodes per pixel totalises two times more signal than an above IC pixel under a standard Bayer pattern 2,3. In each square of this GretagMacbeth chart is the reference colour on the right and the experimentally measured colour on the left with three amorphous silicon photodiodes per pixel. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  17. Silicon-CsI detector array for heavy-ion reactions

    CERN Document Server

    Norbeck, E; Pogodin, P I; Cheng, Y W; Ingram, F D; Bjarki, O; Grévy, S; Magestro, D J; Molen, A M V; Westfall, G D

    2000-01-01

    An array of 60 silicon-CsI(Tl) detector telescopes has been developed along with associated electronics. The close packing of the telescopes required novel designs for the photodiodes and the silicon DELTA E detectors. Newly developed electronics include preamplifiers, shaping amplifiers, test pulse circuitry, and a module to monitor leakage currents in the silicon diodes. The array covers angles from 5 deg. to 18 deg. in the 4 pi Array at the National Superconducting Cyclotron Laboratory at Michigan State University. It measures protons to 150 MeV and has isotopic resolution for intermediate mass nuclei.

  18. Microprocessor system to recover data from a self-scanning photodiode array

    International Nuclear Information System (INIS)

    Koppel, L.N.; Gadd, T.J.

    1975-01-01

    A microprocessor system developed at Lawrence Livermore Laboratory has expedited the recovery of data describing the low energy x-ray spectra radiated by laser-fusion targets. An Intel microprocessor controls the digitization and scanning of the data stream of an x-ray-sensitive self-scanning photodiode array incorporated in a crystal diffraction spectrometer

  19. HPLC-photodiode array detection analysis of curcuminoids in Curcuma species indigenous to Indonesia

    NARCIS (Netherlands)

    Bos, Rein; Windono, Tri; Woerdenbag, Herman J.; Boersma, Ykelien L.; Koulman, Albert; Kayser, Oliver

    An optimized HPLC method with photodiode array detection was developed and applied to analyse the curcuminoids curcumin, demethoxycurcumin, and bis-demethoxycurcumin in rhizomes of Curcuma mangga Val &. v. Zijp, C. heyneana Val. & v. Zijp, C. aeruginosa Roxb. and C. soloensis Val. (Zingiberaceae),

  20. Digital system for acquiring signals from photodiode arrays. No. Program Element 2317-08-03

    International Nuclear Information System (INIS)

    Le Guen, M.; Meric, B.

    1981-01-01

    A model of circuit allowing the digitization and the memorization of signals coming from linear arrays of photodiodes have been realized. The authors first recall the organization and present in the second part some test results on experimental sites. The model consists of 1 - an acquisition, memorization and visualization card (AMV card) for the data from RETICON 121 photodiode strips, 2 - a series transfer card for the memorized data, and 3 - an interface and multiplexing card associated with a system using a 6800 microprocessor allowing the management of eight acquisition cards [fr

  1. Predictable quantum efficient detector based on n-type silicon photodiodes

    Science.gov (United States)

    Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

    2017-12-01

    The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of

  2. HgCdTe e-avalanche photodiode detector arrays

    Directory of Open Access Journals (Sweden)

    Anand Singh

    2015-08-01

    Full Text Available Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 and high gain 5500 at -8 V were achieved in the n+-υ-p+ HgCdTe e-APD at 80 K. LPE based HgCdTe e-APD development makes this technology amenable for adoption in the foundries established for the conventional HgCdTe photovoltaic detector arrays without any additional investment.

  3. An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

    Science.gov (United States)

    Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

    2017-09-01

    Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

  4. Radiation profile measurements for edge transport barrier discharges in Compact Helical System using AXUV photodiode arrays

    International Nuclear Information System (INIS)

    Suzuki, C.; Okamura, S.; Minami, T.; Akiyama, T.; Fujisawa, A.; Ida, K.; Isobe, M.; Matsuoka, K.; Nagaoka, K.; Nishimura, S.; Peterson, B. J.; Shimizu, A.; Takahashi, C.; Toi, K.; Yoshimura, Y.

    2005-01-01

    The formation of edge transport barrier (ETB) has recently been found in Compact Helical System (CHS) plasmas heated by co-injected neutral beam injection (NBI) with strong gas puffing. This regime is characterized by the appearance of the steep gradient of the electron density near the edge following the abrupt drop of hydrogen Balmer alpha (H α ) line intensity. In addition to single channel pyroelectric detector as a conventional bolometer, we have employed unfiltered absolute extreme ultraviolet (AXUV) photodiode arrays as a simple and low-cost diagnostic to investigate spatial and temporal variations of radiation emissivity in the ETB discharges. A compact mounting module for a 20 channel AXUV photodiode array including an in-vacuum preamplifier for immediate current-voltage conversion has successfully been designed and fabricated. Two identical modules installed in the upper and lower viewports provide 40 lines of sight covering the inboard and outboard sides within the horizontally elongated cross section of the CHS plasma with wide viewing angle. Although spectral uniformity of the detector sensitivity of the AXUV photodiode is unsatisfied for photon energies lower than 200 eV, it has been confirmed that the signals of AXUV photodiode and pyroelectric detector in the ETB discharges show roughly the same behavior except for the very beginning and end of the discharges. The results of the measurements in typical ETB discharges show that the signals of all the channels of the AXUV photodiode arrays begin to increase more rapidly at the moment of the transition than before. The rate of the increase is larger for the edge viewing chords than for the center viewing ones, which indicates the flattening of the radiation profile following the change in the electron density profile after the formation of the ETB. However, the signals for the edge chords tend to saturate after several tens of milliseconds, while they still continue to increase for the central chords

  5. 16-element photodiode array for the angular microdeflection detector and for stabilization of a laser radiation direction

    Science.gov (United States)

    Wegrzecki, Maciej; Piotrowski, Tadeusz; Bar, Jan; Dobrowolski, Rafał; Klimov, Andrii; Klos, Helena; Marchewka, Michał; Nieprzecki, Marek; Panas, Andrzej; Prokaryn, Piotr; Seredyński, Bartłomiej; Sierakowski, Andrzej; Słysz, Wojciech; Szmigiel, Dariusz; Zaborowski, Michal

    2016-12-01

    In this paper, the design and technology of two types of 16-element photodiode arrays is described. The arrays were developed by the ITE and are to be used in detection of microdeflection of laser radiation at the Institute of Metrology and Biomedical Engineering in the Faculty of Mechatronics of Warsaw University of Technology. The electrical and photoelectrical parameters of the arrays are presented.

  6. Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

    Science.gov (United States)

    Di Bartolomeo, Antonio; Luongo, Giuseppe; Giubileo, Filippo; Funicello, Nicola; Niu, Gang; Schroeder, Thomas; Lisker, Marco; Lupina, Grzegorz

    2017-06-01

    We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 \\text{A} {{\\text{W}}-1} and a normalized detectivity higher than 3.5× {{10}12} \\text{cm} \\text{H}{{\\text{z}}1/2} {{\\text{W}}-1} in the visible range. It exhibits a photocurrent exceeding the forward current because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. We perform extensive I-V and C-V characterization at different temperatures and we measure a zero-bias Schottky barrier height of 0.52 eV at room temperature, as well as an effective Richardson constant A **  =  4× {{10}-5} \\text{A} \\text{c}{{\\text{m}}-2} {{\\text{K}}-2} and an ideality factor n≈ 3.6 , explained by a thin (<1 nm) oxide layer at the Gr/Si interface.

  7. Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Verkhovtseva, A. V.; Gergel, V. A.

    2009-01-01

    Statistical fluctuations of the avalanche's multiplication efficiency were studied as applied to the single-photon (Geiger) mode of avalanche photodiodes. The distribution function of partial multiplication factors with an anomalously wide (of the order of the average) dispersion was obtained. Expressions for partial feedback factors were derived in terms of the average gain and the corresponding dependences on the diode's overvoltage were calculated. Final expressions for the photon-electric pulse's conversion were derived by averaging corresponding formulas over the coordinate of initiating photoelectron generation using the functions of optical photon absorption in silicon.

  8. Linear array of photodiodes to track a human speaker for video recording

    International Nuclear Information System (INIS)

    DeTone, D; Neal, H; Lougheed, R

    2012-01-01

    Communication and collaboration using stored digital media has garnered more interest by many areas of business, government and education in recent years. This is due primarily to improvements in the quality of cameras and speed of computers. An advantage of digital media is that it can serve as an effective alternative when physical interaction is not possible. Video recordings that allow for viewers to discern a presenter's facial features, lips and hand motions are more effective than videos that do not. To attain this, one must maintain a video capture in which the speaker occupies a significant portion of the captured pixels. However, camera operators are costly, and often do an imperfect job of tracking presenters in unrehearsed situations. This creates motivation for a robust, automated system that directs a video camera to follow a presenter as he or she walks anywhere in the front of a lecture hall or large conference room. Such a system is presented. The system consists of a commercial, off-the-shelf pan/tilt/zoom (PTZ) color video camera, a necklace of infrared LEDs and a linear photodiode array detector. Electronic output from the photodiode array is processed to generate the location of the LED necklace, which is worn by a human speaker. The computer controls the video camera movements to record video of the speaker. The speaker's vertical position and depth are assumed to remain relatively constant– the video camera is sent only panning (horizontal) movement commands. The LED necklace is flashed at 70Hz at a 50% duty cycle to provide noise-filtering capability. The benefit to using a photodiode array versus a standard video camera is its higher frame rate (4kHz vs. 60Hz). The higher frame rate allows for the filtering of infrared noise such as sunlight and indoor lighting–a capability absent from other tracking technologies. The system has been tested in a large lecture hall and is shown to be effective.

  9. Linear array of photodiodes to track a human speaker for video recording

    Science.gov (United States)

    DeTone, D.; Neal, H.; Lougheed, R.

    2012-12-01

    Communication and collaboration using stored digital media has garnered more interest by many areas of business, government and education in recent years. This is due primarily to improvements in the quality of cameras and speed of computers. An advantage of digital media is that it can serve as an effective alternative when physical interaction is not possible. Video recordings that allow for viewers to discern a presenter's facial features, lips and hand motions are more effective than videos that do not. To attain this, one must maintain a video capture in which the speaker occupies a significant portion of the captured pixels. However, camera operators are costly, and often do an imperfect job of tracking presenters in unrehearsed situations. This creates motivation for a robust, automated system that directs a video camera to follow a presenter as he or she walks anywhere in the front of a lecture hall or large conference room. Such a system is presented. The system consists of a commercial, off-the-shelf pan/tilt/zoom (PTZ) color video camera, a necklace of infrared LEDs and a linear photodiode array detector. Electronic output from the photodiode array is processed to generate the location of the LED necklace, which is worn by a human speaker. The computer controls the video camera movements to record video of the speaker. The speaker's vertical position and depth are assumed to remain relatively constant- the video camera is sent only panning (horizontal) movement commands. The LED necklace is flashed at 70Hz at a 50% duty cycle to provide noise-filtering capability. The benefit to using a photodiode array versus a standard video camera is its higher frame rate (4kHz vs. 60Hz). The higher frame rate allows for the filtering of infrared noise such as sunlight and indoor lighting-a capability absent from other tracking technologies. The system has been tested in a large lecture hall and is shown to be effective.

  10. Miniature silicon photodiodes for photon and electron radiation dosimetry in therapeutical applications

    International Nuclear Information System (INIS)

    Gilar, O.; Petr, I.

    1986-01-01

    The silicon diode is manufactured from P type silicon, the P layer is implanted with boron atoms and the N layer with phosphorus atoms. The diode dimensions are 2x2x0.2 mm. It is encased in elastic tissue-equivalent material. The electrodes are from an Al foil. The diode can be used as an in-vivo dosemeter in human body cavities. When irradiated, it supplies information on the instantaneous dose rate at a given point and on the dose cumulated over a certain time. Its current response to gamma radiation kerma rate is linear, directional sensitivity is isotropic. Temperature sensitivity of the photodiode is shown graphically for the range 20 to 40 degC, and the depth dose distribution measured in a water phantom is given for 6, 12 and 20 MeV photons and electrons. The diode energy dependence shows increased sensitivity to low-energy photons. (M.D.)

  11. High-speed detection at two micrometres with monolithic silicon photodiodes

    Science.gov (United States)

    Ackert, Jason J.; Thomson, David J.; Shen, Li; Peacock, Anna C.; Jessop, Paul E.; Reed, Graham T.; Mashanovich, Goran Z.; Knights, Andrew P.

    2015-06-01

    With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’. A promising solution is to open new spectral regions at wavelengths near 2 μm and to exploit the long-wavelength transmission and amplification capabilities of hollow-core photonic-bandgap fibres and the recently available thulium-doped fibre amplifiers. To date, photodetector devices for this window have largely relied on III-V materials or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility. Here, we describe a silicon photodiode operating at 20 Gbit s-1 in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.

  12. Silicon Micromachined Microlens Array for THz Antennas

    Science.gov (United States)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  13. Post-processing Free Quantum Random Number Generator Based on Avalanche Photodiode Array

    International Nuclear Information System (INIS)

    Li Yang; Liao Sheng-Kai; Liang Fu-Tian; Shen Qi; Liang Hao; Peng Cheng-Zhi

    2016-01-01

    Quantum random number generators adopting single photon detection have been restricted due to the non-negligible dead time of avalanche photodiodes (APDs). We propose a new approach based on an APD array to improve the generation rate of random numbers significantly. This method compares the detectors' responses to consecutive optical pulses and generates the random sequence. We implement a demonstration experiment to show its simplicity, compactness and scalability. The generated numbers are proved to be unbiased, post-processing free, ready to use, and their randomness is verified by using the national institute of standard technology statistical test suite. The random bit generation efficiency is as high as 32.8% and the potential generation rate adopting the 32 × 32 APD array is up to tens of Gbits/s. (paper)

  14. Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range

    NARCIS (Netherlands)

    Shi, L.; Sarubbi, F.; Nanver, L.K.; Kroth, U.; Gottwald, A.; Nihtianov, S.

    2010-01-01

    In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light and for the extreme-ultraviolet (EUV) spectral range. The devices were developed and fabricated at the Delft Institute of Microsystems and

  15. Characterization and quality control of avalanche photodiode arrays for the Clear-PEM detector modules

    International Nuclear Information System (INIS)

    Abreu, Conceicao; Amaral, Pedro; Carrico, Bruno; Ferreira, Miguel; Luyten, Joan; Moura, Rui; Ortigao, Catarina; Rato, Pedro; Varela, Joao

    2007-01-01

    Clear-PEM is a Positron Emission Mammography (PEM) prototype being developed in the framework of the Crystal Clear Collaboration at CERN. This device is a dedicated PET camera for mammography, based on LYSO:Ce scintillator crystals, Avalanche PhotoDiodes (APD) and a fast, low-noise electronics readout system, designed to examine both the breast and the axillary lymph node areas, and aiming at the detection of tumors down to 2 mm in diameter. The prototype has two planar detector heads, each composed of 96 detector modules. The Clear-PEM detector module is composed of a matrix of 32 identical 2x2x20 mm 3 LYSO:Ce crystals read at both ends by Hamamatsu S8550 APD arrays (4x8) for Depth-of-Interaction (DoI) capability. The APD arrays were characterized by the measurement of gain and dark current as a function of bias voltage, under controlled temperature conditions. Two independent setups were used. The full set of 398 APD arrays followed a well-defined quality control (QC) protocol, aiming at the rejection of arrays not complying within defined specifications. From a total of 398 arrays, only 2 (0.5%) were rejected, reassuring the trust in these detectors for prototype assembly and future developments

  16. Predictions of silicon avalanche photodiode detector performance in water vapor differential absorption lidar

    Science.gov (United States)

    Kenimer, R. L.

    1988-01-01

    Performance analyses are presented which establish that over most of the range of signals expected for a down-looking differential absorption lidar (DIAL) operated at 16 km the silicon avalanche photodiode (APD) is the preferred detector for DIAL measurements of atmospheric water vapor in the 730 nm spectral region. The higher quantum efficiency of the APD's, (0.8-0.9) compared to a photomultiplier's (0.04-0.18) more than offsets the higher noise of an APD receiver. In addition to offering lower noise and hence lower random error the APD's excellent linearity and impulse recovery minimize DIAL systematic errors attributable to the detector. Estimates of the effect of detector system parameters on overall random and systematic DIAL errors are presented, and performance predictions are supported by laboratory characterization data for an APD receiver system.

  17. The performance of photon counting imaging with a Geiger mode silicon avalanche photodiode

    International Nuclear Information System (INIS)

    Qu, Hui-Ming; Zhang, Yi-Fan; Ji, Zhong-Jie; Chen, Qian

    2013-01-01

    In principle, photon counting imaging can detect a photon. With the development of low-level-light image intensifier techniques and low-level-light detection devices, photon counting imaging can now detect photon images under extremely low illumination. Based on a Geiger mode silicon avalanche photodiode single photon counter, an experimental system for photon counting imaging was built through two-dimensional scanning of a SPAD (single photon avalanche diode) detector. The feasibility of the imaging platform was validated experimentally. Two images with different characteristics, namely, the USAF 1951 resolution test panel and the image of Lena, were chosen to evaluate the imaging performance of the experimental system. The results were compared and analysed. The imaging properties under various illumination and scanning steps were studied. The lowest illumination limit of the SPAD photon counting imaging was determined. (letter)

  18. Assembly and test of a silicon photodiode and a selenium cell in a laboratory photometer

    International Nuclear Information System (INIS)

    Mejias Espinoza, Hugo Alberto

    2008-01-01

    A comparison procedure is performed between a selenium cell and a silicon photodiode for measuring the relative amount of light in a laboratory photometer. The measurements were performed with the existing selenium cell in photometer of high sensitivity to see the behavior at different distances. Measurement instruments have been handled with extremely careful in the calibration. Measurements with neutral density filters have been unsuccessful, the final value which has given the multimeter does not vary fairly with the values of the neutral density filters. An improved transducer must be provided to the photometer circuit of high sensitivity to improve the graphics. A current to voltage converter must be supplemented to the phototransistor. Device response has improved to minimal changes in lighting [es

  19. Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

    Science.gov (United States)

    Thomas, O; Yuan, Z L; Shields, A J

    2012-01-24

    Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

  20. MUST: A silicon strip detector array for radioactive beam experiments

    CERN Document Server

    Blumenfeld, Y; Sauvestre, J E; Maréchal, F; Ottini, S; Alamanos, N; Barbier, A; Beaumel, D; Bonnereau, B; Charlet, D; Clavelin, J F; Courtat, P; Delbourgo-Salvador, P; Douet, R; Engrand, M; Ethvignot, T; Gillibert, A; Khan, E; Lapoux, V; Lagoyannis, A; Lavergne, L; Lebon, S; Lelong, P; Lesage, A; Le Ven, V; Lhenry, I; Martin, J M; Musumarra, A; Pita, S; Petizon, L; Pollacco, E; Pouthas, J; Richard, A; Rougier, D; Santonocito, D; Scarpaci, J A; Sida, J L; Soulet, C; Stutzmann, J S; Suomijärvi, T; Szmigiel, M; Volkov, P; Voltolini, G

    1999-01-01

    A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm sup 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and a...

  1. MUST: A silicon strip detector array for radioactive beam experiments

    International Nuclear Information System (INIS)

    Blumenfeld, Y.; Auger, F.; Sauvestre, J.E.; Marechal, F.; Ottini, S.; Alamanos, N.; Barbier, A.; Beaumel, D.; Bonnereau, B.; Charlet, D.; Clavelin, J.F.; Courtat, P.; Delbourgo-Salvador, P.; Douet, R.; Engrand, M.; Ethvignot, T.; Gillibert, A.; Khan, E.; Lapoux, V.; Lagoyannis, A.; Lavergne, L.; Lebon, S.; Lelong, P.; Lesage, A.; Le Ven, V.; Lhenry, I.; Martin, J.M.; Musumarra, A.; Pita, S.; Petizon, L.; Pollacco, E.; Pouthas, J.; Richard, A.; Rougier, D.; Santonocito, D.; Scarpaci, J.A.; Sida, J.L.; Soulet, C.; Stutzmann, J.S.; Suomijaervi, T.; Szmigiel, M.; Volkov, P.; Voltolini, G.

    1999-01-01

    A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and analog channels of the array in one crate placed adjacent to the reaction chamber and fully remote controlled, including pulse visualization on oscilloscopes. A stand alone data acquisition system devoted to the MUST array has been developed. Isotope identification of light charged particles over the full energy range has been achieved, and the capability of the system to measure angular distributions of states populated in inverse kinematics reactions has been demonstrated

  2. Measurement of impurity emission profiles in CHS Plasma using AXUV photodiode arrays and VUV bandpass filters

    International Nuclear Information System (INIS)

    Suzuki, C.; Peterson, B.J.; Ida, K.

    2004-01-01

    We have designed a compact and low-cost diagnostic system for spatiotemporal distributions of specific vacuum ultraviolet (VUV) emission lines from impurities in Compact Helical System (CHS) plasmas. The system consists of 20 channel absolute extreme ultraviolet photodiode arrays combined with interchangeable thin foil filters which have passbands in the VUV region. A compact mounting module which contains all the components including an in-vacuum preamplifier for immediate current-voltage conversion has been designed and successfully fabricated. A preliminary measurement with a single module using an aluminum foil filter has been carried out for monitoring the behavior of oxygen impurity in CHS, and initial results have been obtained. Two identical modules equipped with Versa Module European bus-based analog-digital converters will be available for future tomographic measurements

  3. Analysis of taxines in Taxus plant material and cell cultures by hplc photodiode array and hplc-electrospray mass spectrometry

    NARCIS (Netherlands)

    Theodoridis, G.; Laskaris, G.; Rozendaal, E.L.M.; Verpoorte, R.

    2001-01-01

    A semi-purified Taxus baccata needles extract was analysed by RP-HPLC. More than 18 taxines and cinnamates were detected by photodiode array detection and LC-MS, 10 of them being positively identified. Furthermore, 10-deacetyl baccatin III (paclitaxel's main precursor) and other taxanes were also

  4. X-ray imager using solution processed organic transistor arrays and bulk heterojunction photodiodes on thin, flexible plastic substrate

    NARCIS (Netherlands)

    Gelinck, G.H.; Kumar, A.; Moet, D.; Steen, J.L. van der; Shafique, U.; Malinowski, P.E.; Myny, K.; Rand, B.P.; Simon, M.; Rütten, W.; Douglas, A.; Jorritsma, J.; Heremans, P.L.; Andriessen, H.A.J.M.

    2013-01-01

    We describe the fabrication and characterization of large-area active-matrix X-ray/photodetector array of high quality using organic photodiodes and organic transistors. All layers with the exception of the electrodes are solution processed. Because it is processed on a very thin plastic substrate

  5. HIGH-SPEED IMAGING AND WAVEFRONT SENSING WITH AN INFRARED AVALANCHE PHOTODIODE ARRAY

    Energy Technology Data Exchange (ETDEWEB)

    Baranec, Christoph; Atkinson, Dani; Hall, Donald; Jacobson, Shane; Chun, Mark [Institute for Astronomy, University of Hawai‘i at Mānoa, Hilo, HI 96720-2700 (United States); Riddle, Reed [Division of Physics, Mathematics, and Astronomy, California Institute of Technology, Pasadena, CA 91125 (United States); Law, Nicholas M., E-mail: baranec@hawaii.edu [Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255 (United States)

    2015-08-10

    Infrared avalanche photodiode (APD) arrays represent a panacea for many branches of astronomy by enabling extremely low-noise, high-speed, and even photon-counting measurements at near-infrared wavelengths. We recently demonstrated the use of an early engineering-grade infrared APD array that achieves a correlated double sampling read noise of 0.73 e{sup −} in the lab, and a total noise of 2.52 e{sup −} on sky, and supports simultaneous high-speed imaging and tip-tilt wavefront sensing with the Robo-AO visible-light laser adaptive optics (AO) system at the Palomar Observatory 1.5 m telescope. Here we report on the improved image quality simultaneously achieved at visible and infrared wavelengths by using the array as part of an image stabilization control loop with AO-sharpened guide stars. We also discuss a newly enabled survey of nearby late M-dwarf multiplicity, as well as future uses of this technology in other AO and high-contrast imaging applications.

  6. Nanoparticle sorting in silicon waveguide arrays

    Science.gov (United States)

    Zhao, H. T.; Zhang, Y.; Chin, L. K.; Yap, P. H.; Wang, K.; Ser, W.; Liu, A. Q.

    2017-08-01

    This paper presents the optical fractionation of nanoparticles in silicon waveguide arrays. The optical lattice is generated by evanescent coupling in silicon waveguide arrays. The hotspot size is tunable by changing the refractive index of surrounding liquids. In the experiment, 0.2-μm and 0.5-μm particles are separated with a recovery rate of 95.76%. This near-field approach is a promising candidate for manipulating nanoscale biomolecules and is anticipated to benefit the biomedical applications such as exosome purification, DNA optical mapping, cell-cell interaction, etc.

  7. Light Trapping with Silicon Light Funnel Arrays

    Directory of Open Access Journals (Sweden)

    Ashish Prajapati

    2018-03-01

    Full Text Available Silicon light funnels are three-dimensional subwavelength structures in the shape of inverted cones with respect to the incoming illumination. Light funnel (LF arrays can serve as efficient absorbing layers on account of their light trapping capabilities, which are associated with the presence of high-density complex Mie modes. Specifically, light funnel arrays exhibit broadband absorption enhancement of the solar spectrum. In the current study, we numerically explore the optical coupling between surface light funnel arrays and the underlying substrates. We show that the absorption in the LF array-substrate complex is higher than the absorption in LF arrays of the same height (~10% increase. This, we suggest, implies that a LF array serves as an efficient surface element that imparts additional momentum components to the impinging illumination, and hence optically excites the substrate by near-field light concentration, excitation of traveling guided modes in the substrate, and mode hybridization.

  8. Evaluation of Space Radiation Effects on HgCdTe Avalanche Photodiode Arrays for Lidar Applications

    Science.gov (United States)

    Sun, Xiaoli; Abshire, James B.; Lauenstein, Jean-Marie; Sullivan, William III; Beck, Jeff; Hubbs, John E.

    2018-01-01

    We report the results from proton and gamma ray radiation testing of HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS for space lidar detectors. We tested these devices with both approximately 60 MeV protons and gamma rays, with and without the read out integrated circuit (ROIC). We also measured the transient responses with the device fully powered and with the APD gain from unity to greater than 1000. The detectors produced a large current impulse in response to each proton hit but the response completely recovered within 1 microsecond. The devices started to have persistent damage at a proton fluence of 7e10 protons/cm2, equivalent to 10 krad(Si) total ionization dose. The dark current became much higher after the device was warmed to room temperature and cooled to 80K again, but it completely annealed after baking at 85 C for several hours. These results showed the HgCdTe APD arrays are suitable for use in space lidar for typical Earth orbiting and planetary missions provided that provisions are made to heat the detector chip to 85 C for several hours after radiation damage becomes evident that system performance is impacted.

  9. A silicon avalanche photodiode detector circuit for Nd:YAG laser scattering

    International Nuclear Information System (INIS)

    Hsieh, C.L.; Haskovec, J.; Carlstrom, T.N.; DeBoo, J.C.; Greenfield, C.M.; Snider, R.T.; Trost, P.

    1990-06-01

    A silicon avalanche photodiode with an internal gain of about 50 to 100 is used in a temperature controlled environment to measure the Nd:YAG laser Thomson scattered spectrum in the wavelength range from 700 to 1150 nm. A charge sensitive preamplifier has been developed for minimizing the noise contribution from the detector electronics. Signal levels as low as 20 photoelectrons (S/N = 1) can be detected. Measurements show that both the signal and the variance of the signal vary linearly with the input light level over the range of interest, indicating Poisson statistics. The signal is processed using a 100 ns delay line and a differential amplifier which subtracts the low frequency background light component. The background signal is amplified with a computer controlled variable gain amplifier and is used for an estimate of the measurement error, calibration, and Z eff measurements of the plasma. The signal processing has been analyzed using a theoretical model to aid the system design and establish the procedure for data error analysis. 4 refs., 5 figs

  10. Simultaneous multi-element atomic absorption system using photodiode array detector

    International Nuclear Information System (INIS)

    Tong, S.L.; Chin, K.S.

    1994-01-01

    A photodiode array (PDA) detector-multichannel analyser (MCA) system has been coupled to a flame and a graphite furnace atomiser and tested for simultaneous multielement atomic absorption analysis. Multielement hollow cathode lamps (HCL) are used as light source. Spectral lines are dispersed through a spectrograph with triple gratings and detected by a 25.4 mm PDA detector consisting of 1024 elements. The optical MCA system is capable of recording multiple spectra spanned by the spectrograph/PDA. The transmitted intensity spectra obtained for the standard and analyte solutions during flame or graphite furnace atomisation are converted to absorbance spectra using the MCA software provided. Results from the comparison studies show that the linear range and sensitivities for Ni-Co-Fe and Cu-Cr obtained from the simultaneous measurements are within the same order of magnitudes as those from conventional single element determinations using photomultiplier tube detection. The study also shows that non-atomic absorption can be readily corrected by a two-line method where non-atomic absorption lines can be chosen from the spectra recorded simultaneously. The proposed system has been evaluated for the determination of trace elements using NBS standard reference water SRM 1643b

  11. Feasibility study into the use of silicon photo-diodes for the alignment of collimated X-rays on the SRS

    CERN Document Server

    Buffey, S G

    1999-01-01

    Dynamic alignment of beam on the crystal during data collection was studied. Development of silicon photo-diode detectors for the vacuum ultraviolet and soft X-ray spectral regions has led to the use of such devices as beam alignment tools for Protein Crystallography beamlines on the Synchrotron Radiation Source at Daresbury. Quadrant photo-diodes are used to provide signals proportional to the number of photons hitting each photo-diode, these are amplified, digitised and then summed to give the x-y position of the beam centre. (author)

  12. 2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits.

    Science.gov (United States)

    Wang, Ruijun; Sprengel, Stephan; Muneeb, Muhammad; Boehm, Gerhard; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

    2015-10-05

    The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform.

  13. Microspot-based ELISA in microfluidics: chemiluminescence and colorimetry detection using integrated thin-film hydrogenated amorphous silicon photodiodes.

    Science.gov (United States)

    Novo, Pedro; Prazeres, Duarte Miguel França; Chu, Virginia; Conde, João Pedro

    2011-12-07

    Microfluidic technology has the potential to decrease the time of analysis and the quantity of sample and reactants required in immunoassays, together with the potential of achieving high sensitivity, multiplexing, and portability. A lab-on-a-chip system was developed and optimized using optical and fluorescence microscopy. Primary antibodies are adsorbed onto the walls of a PDMS-based microchannel via microspotting. This probe antibody is then recognised using secondary FITC or HRP labelled antibodies responsible for providing fluorescence or chemiluminescent and colorimetric signals, respectively. The system incorporated a micron-sized thin-film hydrogenated amorphous silicon photodiode microfabricated on a glass substrate. The primary antibody spots in the PDMS-based microfluidic were precisely aligned with the photodiodes for the direct detection of the antibody-antigen molecular recognition reactions using chemiluminescence and colorimetry. The immunoassay takes ~30 min from assay to the integrated detection. The conditions for probe antibody microspotting and for the flow-through ELISA analysis in the microfluidic format with integrated detection were defined using antibody solutions with concentrations in the nM-μM range. Sequential colorimetric or chemiluminescence detection of specific antibody-antigen molecular recognition was quantitatively detected using the photodiode. Primary antibody surface densities down to 0.182 pmol cm(-2) were detected. Multiplex detection using different microspotted primary antibodies was demonstrated.

  14. Gallium-based avalanche photodiode optical crosstalk

    International Nuclear Information System (INIS)

    Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

    2006-01-01

    Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time

  15. Low-energy X-ray and gamma spectrometry using silicon photodiodes

    International Nuclear Information System (INIS)

    Silva, Iran Jose Oliveira da

    2000-08-01

    The use of semiconductor detectors for radiation detection has increased in recent years due to advantages they present in comparison to other types of detectors. As the working principle of commercially available photodiodes is similar to the semiconductor detector, this study was carried out to evaluate the use of Si photodiodes for low energy x-ray and gamma spectrometry. The photodiodes investigated were SFH-205, SFH-206, BPW-34 and XRA-50 which have the following characteristics: active area of 0,07 cm 2 and 0,25 cm 2 , thickness of the depletion ranging from 100 to 200 μm and junction capacitance of 72 pF. The photodiode was polarized with a reverse bias and connected to a charge sensitive pre-amplifier, followed by a amplifier and multichannel pulse analyzer. Standard radiation source used in this experiment were 241 Am, 109 Cd, 57 Co and 133 Ba. The X-ray fluorescence of lead and silver were also measured through K- and L-lines. All the measurements were made with the photodiodes at room temperature.The results show that the responses of the photodiodes very linear by the x-ray energy and that the energy resolution in FWHM varied between 1.9 keV and 4.4 keV for peaks corresponding to 11.9 keV to 59 keV. The BPW-34 showed the best energy resolution and the lower dark current. The full-energy peak efficiency was also determined and it was observed that the peak efficiency decreases rapidly above 50 keV. The resolution and efficiency are similar to the values obtained with other semiconductor detectors, evidencing that the photodiodes used in that study can be used as a good performance detector for low energy X-ray and gamma spectrometry. (author)

  16. The oxidized porous silicon field emission array

    International Nuclear Information System (INIS)

    Smith, D.D.; Demroff, H.P.; Elliott, T.S.; Kasprowicz, T.B.; Lee, B.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Trost, H.J.

    1993-01-01

    The goal of developing a highly efficient microwave power source has led the authors to investigate new methods of electron field emission. One method presently under consideration involves the use of oxidized porous silicon thin films. The authors have used this technology to fabricate the first working field emission arrays from this substance. This approach reduces the diameter of an individual emitter to the nanometer scale. Tests of the first samples are encouraging, with extracted electron currents to nearly 1 mA resulting from less than 20 V of pulsed DC gate voltage. Modulated emission at 5 MHz was also observed. Developments of a full-scale emission array capable of delivering an electron beam at 18 GHz of minimum density 100 A/cm 2 is in progress

  17. The Argonne silicon strip-detector array

    Energy Technology Data Exchange (ETDEWEB)

    Wuosmaa, A H; Back, B B; Betts, R R; Freer, M; Gehring, J; Glagola, B G; Happ, Th; Henderson, D J; Wilt, P [Argonne National Lab., IL (United States); Bearden, I G [Purdue Univ., Lafayette, IN (United States). Dept. of Physics

    1992-08-01

    Many nuclear physics experiments require the ability to analyze events in which large numbers of charged particles are detected and identified simultaneously, with good resolution and high efficiency, either alone, or in coincidence with gamma rays. The authors have constructed a compact large-area detector array to measure these processes efficiently and with excellent energy resolution. The array consists of four double-sided silicon strip detectors, each 5x5 cm{sup 2} in area, with front and back sides divided into 16 strips. To exploit the capability of the device fully, a system to read each strip-detector segment has been designed and constructed, based around a custom-built multi-channel preamplifier. The remainder of the system consists of high-density CAMAC modules, including multi-channel discriminators, charge-sensing analog-to-digital converters, and time-to-digital converters. The array`s performance has been evaluated using alpha-particle sources, and in a number of experiments conducted at Argonne and elsewhere. Energy resolutions of {Delta}E {approx} 20-30 keV have been observed for 5 to 8 MeV alpha particles, as well as time resolutions {Delta}T {<=} 500 ps. 4 figs.

  18. A Discrete Component Low-Noise Preamplifier Readout for a Linear (1x16) SiC Photodiode Array

    Science.gov (United States)

    Kahle, Duncan; Aslam, Shahid; Herrero, Frederico A.; Waczynski, Augustyn

    2016-01-01

    A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1x16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analogue signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

  19. A discrete component low-noise preamplifier readout for a linear (1×16) SiC photodiode array

    Energy Technology Data Exchange (ETDEWEB)

    Kahle, Duncan [NASA, Goddard Space Flight Center, Detector Systems Branch, Greenbelt, MD 20771 (United States); Aslam, Shahid, E-mail: shahid.aslam-1@nasa.gov [NASA, Goddard Space Flight Center, Planetary Systems Laboratory, Greenbelt, MD 20771 (United States); Herrero, Federico A.; Waczynski, Augustyn [NASA, Goddard Space Flight Center, Detector Systems Branch, Greenbelt, MD 20771 (United States)

    2016-09-11

    A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1×16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analog signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

  20. Micropatterned arrays of porous silicon: toward sensory biointerfaces.

    Science.gov (United States)

    Flavel, Benjamin S; Sweetman, Martin J; Shearer, Cameron J; Shapter, Joseph G; Voelcker, Nicolas H

    2011-07-01

    We describe the fabrication of arrays of porous silicon spots by means of photolithography where a positive photoresist serves as a mask during the anodization process. In particular, photoluminescent arrays and porous silicon spots suitable for further chemical modification and the attachment of human cells were created. The produced arrays of porous silicon were chemically modified by means of a thermal hydrosilylation reaction that facilitated immobilization of the fluorescent dye lissamine, and alternatively, the cell adhesion peptide arginine-glycine-aspartic acid-serine. The latter modification enabled the selective attachment of human lens epithelial cells on the peptide functionalized regions of the patterns. This type of surface patterning, using etched porous silicon arrays functionalized with biological recognition elements, presents a new format of interfacing porous silicon with mammalian cells. Porous silicon arrays with photoluminescent properties produced by this patterning strategy also have potential applications as platforms for in situ monitoring of cell behavior.

  1. A prototype high-resolution animal positron tomograph with avalanche photodiode arrays and LSO crystals

    International Nuclear Information System (INIS)

    Ziegler, S.I.; Pichler, B.J.; Rafecas, M.; Schwaiger, M.

    2001-01-01

    To fully utilize positron emission tomography (PET) as a non-invasive tool for tissue characterization, dedicated instrumentation is being developed which is specially suited for imaging mice and rats. Semiconductor detectors, such as avalanche photodiodes (APDs), may offer an alternative to photomultiplier tubes for the readout of scintillation crystals. Since the scintillation characteristics of lutetium oxyorthosilicate (LSO) are well matched to APDs, the combination of LSO and APDs seems favourable, and the goal of this study was to build a positron tomograph with LSO-APD modules to prove the feasibility of such an approach. A prototype PET scanner based on APD readout of small, individual LSO crystals was developed for tracer studies in mice and rats. The tomograph consists of two sectors (86 mm distance), each comprising three LSO-APD modules, which can be rotated for the acquisition of complete projections. In each module, small LSO crystals (3.7 x 3.7 x 12 mm 3 ) are individually coupled to one channel within matrices containing 2 x 8 square APDs (2.6 x 2.6 mm 2 sensitive area per channel). The list-mode data are reconstructed with a penalized weighted least squares algorithm which includes the spatially dependent line spread function of the tomograph. Basic performance parameters were measured with phantoms and first experiments with rats and mice were conducted to introduce this methodology for biomedical imaging. The reconstructed field of view covers 68 mm, which is 80% of the total detector diameter. Image resolution was shown to be 2.4 mm within the whole reconstructed field of view. Using a lower energy threshold of 450 keV, the system sensitivity was 350 Hz/MBq for a line source in air in the centre of the field of view. In a water-filled cylinder of 4.6 cm diameter, the scatter fraction at the centre of the field of view was 16% (450 keV threshold). The count rate was linear up to 700 coincidence counts per second. In vivo studies of anaesthetized

  2. New spectrofluorometer with pulsed intensified photodiodes array for direct trace determination of actinides and lanthanides in solutions

    International Nuclear Information System (INIS)

    Decambox, P.; Kirsch, B.; Mauchien, P.; Moulin, C.

    1989-01-01

    Actinides and lanthanides in solution at very low level are determined by Time-Resolved Laser-Induced Spectrofluorometry (TRLIS) with pulsed intensified photodiodes array detection. Temporal resolution allows discrimination against short lifetime fluorescence and measurement of fluorescence lifetime in various matrices. The use of laser source leads to excitation selectivity and high sensitivity. Multichannel detection allows to cover the entire wavelength range of interest which leads to emission selectivity and rapidity. These different advantages are present in the newly commercialized spectrofluorometer FLUO 2001 together with specially analytical adapted software. The apparatus and performances obtained for several actinides and lanthanides are presented

  3. Spectral dependence of the main parameters of ITE silicon avalanche photodiodes

    Science.gov (United States)

    Wegrzecka, Iwona; Grynglas, Maria; Wegrzecki, Maciej

    2001-08-01

    New applications for avalanche photodiodes (APDs) as in systems using visible radiation, have prompted the need for the evaluation of detection properties of ITE APDs in the 400 divided by 700 nm spectral range. The paper presents the method and result of studies on the spectral dependence of the gain, dark and noise currents, sensitivity and excess noise factor of ITE APDs. The studies have shown that ITE APDs optimized for the near IR radiation can be effectively applied in the detection of radiation above the 500 nm wavelength.

  4. Characterisation of chemical components for identifying historical Chinese textile dyes by ultra high performance liquid chromatography – photodiode array – electrospray ionisation mass spectrometer

    NARCIS (Netherlands)

    Han, J.; Wanrooij, J.; van Bommel, M.; Quye, A.

    2017-01-01

    This research makes the first attempt to apply Ultra High Performance Liquid Chromatography (UHPLC) coupled to both Photodiode Array detection (PDA) and Electrospray Ionisation Mass Spectrometer (ESI–MS) to the chemical characterisation of common textile dyes in ancient China. Three different

  5. Sixa-silicon x-ray array

    International Nuclear Information System (INIS)

    Taylor, I.

    1995-01-01

    Full text: The Spectrum-X-Gamma (SRG) satellite is scheduled for launch in 1995-96. Mission objectives include broad and narrow band imaging spectroscopy over a wide range of energies from the EUV through hard X-rays with an emphasis on studying galactic and extragalactic X-ray sources. Timing and moderate resolution spectroscopy can be performed with the solid state spectrometer SIXA (Silicon X-Ray Array), placed on the focal plane of the SODART telescope with total effective area of 1150 cm 2 at 6 keV (for f = 8 in telescope). The detector consists of 19 circular Si(Li) pixels, each with an active diameter of 9.2 min and thickness of 3 min. A radiative cooler will be used to bring the detector to the proper operating temperature (120-130 K). The energy range 0.5-20 keV is divided into 1024 channels of 20 eV size. Photons can be recorded with 30 μs time resolution and 160-200 eV (1-7 keV) energy resolution. Potential observing programmes (for e.g. time-resolved Iron Kα line spectroscopy) include stellar coronae, cataclysmic variables and X-ray binaries; accretion discs and coronae of neutron stars and black hole candidates; supernova remnants, active galactic nuclei and clusters of galaxies. (author)

  6. Microfabricated Silicon Microneedle Array for Transdermal Drug Delivery

    International Nuclear Information System (INIS)

    Ji, J; Tay, F E; Miao Jianmin; Iliescu, C

    2006-01-01

    This paper presents developed processes for silicon microneedle arrays microfabrication. Three types of microneedles structures were achieved by isotropic etching in inductively coupled plasma (ICP) using SF 6 /O 2 gases, combination of isotropic etching with deep etching, and wet etching, respectively. A microneedle array with biodegradable porous tips was further developed based on the fabricated microneedles

  7. Microfabricated Silicon Microneedle Array for Transdermal Drug Delivery

    Energy Technology Data Exchange (ETDEWEB)

    Ji, J [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Tay, F E [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Miao Jianmin [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Iliescu, C [Institute of Bioengineering and Nanotechnology, 31 Biopolis Way, Nanos, 04-01, 138669 (Singapore)

    2006-04-01

    This paper presents developed processes for silicon microneedle arrays microfabrication. Three types of microneedles structures were achieved by isotropic etching in inductively coupled plasma (ICP) using SF{sub 6}/O{sub 2} gases, combination of isotropic etching with deep etching, and wet etching, respectively. A microneedle array with biodegradable porous tips was further developed based on the fabricated microneedles.

  8. High Sensitivity Indium Phosphide Based Avalanche Photodiode Focal Plane Arrays, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — nLight has demonstrated highly-uniform APD arrays based on the highly sensitive InGaAs/InP material system. These results provide great promise for achieving the...

  9. Miniaturized flow cytometer with 3D hydrodynamic particle focusing and integrated optical elements applying silicon photodiodes

    NARCIS (Netherlands)

    Rosenauer, M.; Buchegger, W.; Finoulst, I.; Verhaert, P.D.E.M.; Vellekoop, M.

    2010-01-01

    In this study, the design, realization and measurement results of a novel optofluidic system capable of performing absorbance-based flow cytometric analysis is presented. This miniaturized laboratory platform, fabricated using SU-8 on a silicon substrate, comprises integrated polymer-based

  10. Radiation Detection Measurements with a New 'Buried Junction' Silicon Avalanche Photodiode

    CERN Document Server

    Lecomte, R; Rouleau, D; Dautet, H; McIntyre, R J; McSween, D; Webb, P

    1999-01-01

    An improved version of a recently developed 'Buried Junction' avalanche photodiode (APD), designed for use with scintillators, is described and characterized. This device, also called the 'Reverse APD', is designed to have a wide depletion layer and thus low capacitance, but to have high gain only for e-h pairs generated within the first few microns of the depletion layer. Thus it has high gain for light from scintillators emitting in the 400-600 nm range, with relatively low dark current noise and it is relatively insensitive to minimum ionizing particles (MIPs). An additional feature is that the metallurgical junction is at the back of the wafer, leaving the front surface free to be coupled to a scintillator without fear of junction contamination. The modifications made in this device, as compared with the earlier diode, have resulted in a lower excess noise factor, lower dark current, and much-reduced trapping. The electrical and optical characteristics of this device are described and measurements of ener...

  11. A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes

    Science.gov (United States)

    Gasmi, Khaled

    2018-02-01

    An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm  ×  90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.

  12. Instrumentation: Photodiode Array Detectors in UV-VIS Spectroscopy. Part II.

    Science.gov (United States)

    Jones, Dianna G.

    1985-01-01

    A previous part (Analytical Chemistry; v57 n9 p1057A) discussed the theoretical aspects of diode ultraviolet-visual (UV-VIS) spectroscopy. This part describes the applications of diode arrays in analytical chemistry, also considering spectroelectrochemistry, high performance liquid chromatography (HPLC), HPLC data processing, stopped flow, and…

  13. Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

    CERN Document Server

    Saveliev, V

    2000-01-01

    The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10 sup 5 -10 sup 6) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

  14. Capacitance-voltage investigation of silicon photodiodes damaged by MeV energy light ions

    International Nuclear Information System (INIS)

    Kalinka, G.; Simon, A.; Novak, M.; Kiss, A.Z.

    2006-01-01

    Complete text of publication follows. Nuclear radiation creates not only deep centers, but in addition influences shallow dopant concentration in semiconductors, as well. At a given temperature the maximum frequency a center can respond to depends on its energy level, therefore the capacitance-voltage (C-V) characteristics of radiation damaged semiconductor diodes should ideally be measured as function of frequency in order to obtain the physical and energy depth distribution of ionized centers [1,2]. In our experiments C-V plots of MeV energy ion irradiated photodiodes were taken at fixed 1 kHz frequency, which is low enough to be sensitive at room temperature to some of the deep levels expected. During, for example, an irradiation with 5.5 MeV α particles the capacitance of a p + nn + diode increased significantly at low voltages, but showed rather small changes at higher ones. The former turned out to be merely related to a decrease of the built in voltage, corresponding to a lifetime to relaxation type transition of the semiconductor [3]. Rescaling C-V data for this change, the remaining, actual capacitance changes could be interpreted as related to nuclear recoil caused damage located around the end of particle tracks. C-V technique has also been used for follow up investigation of spontaneous self annealing at room temperature of irradiated samples. This is shown here by plotting capacitance data normalized to their virgin values as function of depletion depth for irradiation with 430 keV protons, whose range is about 5 μm. The sensitivity of the method is illustrated for low fluence of 6.5 MeV oxygen, whose range is 5 μm, too, and where the normalization is now made to data taken one week after the irradiation. Acknowledgement This work was supported by the Hungarian Research and Technology Innovation Fund and the Croatian Ministry of Science, Education and Sports within the framework of the Hungarian-Croatian Intergovernmental Science and Technology Co

  15. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

    Science.gov (United States)

    2016-01-20

    important in photon‐starved applications, such as night vision or high‐temporal‐resolution imaging. Interest in such scenarios lead to Lincoln’s...information of interest. Lincoln Laboratory’s long-term vision is to merge these functions, so that the work of information extraction is carried...M. Boroson, David O. Caplan, Constantine J. Digenis, David R. Hearn, and Ryan C. Shoup, "Design of an Optical Photon Counting Array Receiver System

  16. Photodiode array for position-sensitive detection using high X-ray flux provided by synchrotron radiation

    Science.gov (United States)

    Jucha, A.; Bonin, D.; Dartyge, E.; Flank, A. M.; Fontaine, A.; Raoux, D.

    1984-09-01

    Synchrotron radiation provides a high intensity source over a large range of wavelengths. This is the prominent quality that has laid the foundations of the EXAFS development (Extended X-ray Absorption Fine Structure). EXAFS data can be collected in different ways. A full scan requires 5 to 10 min, compared to the one-day data collection of a conventional Bremsstrahlung X-ray tube. Recently, by using the new photodiode array (R 1024 SFX) manufactured by Reticon, it has been possible to reduce the data collection time to less than 100 ms. The key elements of this new EXAFS method are a dispersive optics combined with a position sensitive detector able to work under very high flux conditions. The total aperture of 2500 μm × 25 μm for each pixel is well suited to spectroscopic applications. Besides its high dynamic range (> 10 4) and its linearity, the rapidity of the readout allows a flux of 10 9-10 10 photons/s over the 1024 sensing elements.

  17. Study of flavonoids of Sechium edule (Jacq) Swartz (Cucurbitaceae) different edible organs by liquid chromatography photodiode array mass spectrometry.

    Science.gov (United States)

    Siciliano, Tiziana; De Tommasi, Nunziatina; Morelli, Ivano; Braca, Alessandra

    2004-10-20

    A liquid chromatography-mass spectrometry (LC-MS)-based method was developed for the characterization of flavonoids from Sechium edule (Jacq) Swartz (Cucurbitaceae) edible organs, a plant cultivated since pre-Colombian times in Mexico where the fruit is called chayote. Chayote is used for human consumption in many countries; in addition to the fruits, stems, leaves and the tuberous part of the roots are also eaten. Eight flavonoids, including three C-glycosyl and five O-glycosyl flavones, were detected, characterized by nuclear magnetic resonance spectroscopic data, and quantified in roots, leaves, stems, and fruits of the plant by LC-photodiode array-MS. The aglycone moieties are represented by apigenin and luteolin, while the sugar units are glucose, apiose, and rhamnose. The results indicated that the highest total amount of flavonoids was in the leaves (35.0 mg/10 g of dried part), followed by roots (30.5 mg/10 g), and finally by stems (19.3 mg/10 g). Copyright 2004 American Chemical Society

  18. Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

    Science.gov (United States)

    Mehta, Karan K; Orcutt, Jason S; Shainline, Jeffrey M; Tehar-Zahav, Ofer; Sternberg, Zvi; Meade, Roy; Popović, Miloš A; Ram, Rajeev J

    2014-02-15

    We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum efficiencies around 20% and few-gigahertz response bandwidths. We observe this performance at low reverse biases in the range of a few volts and in devices with dark currents below 50 pA at 10 V. These results demonstrate that such photodetector behavior, previously reported by Preston et al. [Opt. Lett. 36, 52 (2011)], is achievable in bulk CMOS processes, with significant improvements with respect to the previous work in quantum efficiency, dark current, linearity, bandwidth, and operating bias due to additional midlevel doping implants and different material deposition. The present work thus offers a robust realization of a fully CMOS-fabricated all-silicon photodetector functional across a wide wavelength range.

  19. A discrete model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode

    International Nuclear Information System (INIS)

    Vanyushin, I. V.; Gergel, V. A.; Gontar', V. M.; Zimoglyad, V. A.; Tishin, Yu. I.; Kholodnov, V. A.; Shcheleva, I. M.

    2007-01-01

    A new discrete theoretical model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode is developed. It is shown that the spreading resistance in the substrate profoundly affects both the amplitude of a single-photon electrical pulse and the possibility of attaining the steady-state form of the avalanche breakdown excluding the Geiger mode of the photodiode's operation. The model is employed to interpret the experimental data obtained using test single-photon cells of avalanche photodiodes fabricated on the basis of the 0.25-μm silicon technology with the use of deep implantation to form the region of avalanche multiplication for the charge carriers. Excellent functional properties of the studied type of the single-photon (Geiger) cell are noted. A typical amplitude characteristic of the cell for optical radiation with the wavelength λ = 0.56 μm in the irradiance range of 10 -3 -10 2 lx is presented; this characteristic indicates that the quantum efficiency of photoconversion is extremely high

  20. ISPA (imaging silicon pixel array) experiment

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    The ISPA tube is a position-sensitive photon detector. It belongs to the family of hybrid photon detectors (HPD), recently developed by CERN and INFN with leading photodetector firms. HPDs confront in a vacuum envelope a photocathode and a silicon detector. This can be a single diode or a pixelized detector. The electrons generated by the photocathode are efficiently detected by the silicon anode by applying a high-voltage difference between them. ISPA tube can be used in high-energy applications as well as bio-medical and imaging applications.

  1. ISPA (imaging silicon pixel array) experiment

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    The bump-bonded silicon pixel detector, developed at CERN by the EP-MIC group, is shown here in its ceramic carrier. Both represent the ISPA-tube anode. The chip features between 1024 (called OMEGA-1) and 8196 (ALICE-1) active pixels.

  2. ISPA (imaging silicon pixel array) experiment

    CERN Document Server

    Patrice Loïez

    2002-01-01

    Application components of ISPA tubes are shown: the CERN-developed anode chip, special windows for gamma and x-ray detection, scintillating crystal and fibre arrays for imaging and tracking of ionizing particles.

  3. Mediating broadband light into graphene–silicon Schottky photodiodes by asymmetric silver nanospheroids: effect of shape anisotropy

    Science.gov (United States)

    Bhardwaj, Shivani; Parashar, Piyush K.; Roopak, Sangita; Ji, Alok; Uma, R.; Sharma, R. P.

    2018-05-01

    Designing thinner, more efficient and cost-effective 2D materials/silicon Schottky photodiodes using the plasmonic concept is one of the most recent quests for the photovoltaic research community. This work demonstrates the enhanced performance of graphene–Si Schottky junction solar cells by introducing asymmetric spheroidal shaped Ag nanoparticles (NPs) embedded in a graphene monolayer (GML). The optical signatures of these Ag NPs (oblate, ortho-oblate, prolate and ortho-prolate) have been analyzed by discrete dipole approximation in terms of extinction efficiency and surface plasmon resonance tunability, against the quasi-static approximation. The spatial field distribution is enhanced by optimizing the size (a eff  =  100 nm) and aspect ratio (0.4) for all of the utilized Ag NPs with an optimized graphene environment (t  =  0.1 nm). An improvement of photon absorption in the thin Si wafer for the polychromatic spectral region (λ ~ 300–1100 nm) under an AM 1.5 G solar spectrum has been observed. This resulted in a photocurrent enhancement from 7.98 mA cm‑2 to 10.0 mA cm‑2 for oblate-shaped NPs integrated into GML/Si Schottky junction solar cells as compared to the bare cell. The structure used in this study to improve the graphene–Si Schottky junction’s performance is also advantageous for other graphene-like 2D material-based Schottky devices.

  4. Simultaneous determination of eperisone hydrochloride and paracetamol in mouse plasma by high performance liquid chromatography-photodiode array detector.

    Science.gov (United States)

    Locatelli, Marcello; Cifelli, Roberta; Di Legge, Cristina; Barbacane, Renato Carmine; Costa, Nicola; Fresta, Massimo; Celia, Christian; Capolupo, Carlo; Di Marzio, Luisa

    2015-04-03

    This paper reports the validation of a quantitative high performance liquid chromatography-photodiode array (HPLC-PDA) method for the simultaneous analysis, in mouse plasma, of eperisone hydrochloride and paracetamol by protein precipitation using zinc sulphate-methanol-acetonitrile. The analytes were resolved on a Gemini C18 column (4.6 mm × 250 mm; 5 μm particle size) using a gradient elution mode with a run time of 15 min, comprising re-equilibration, at 60°C (± 1°C). The method was validated over the concentration range from 0.5 to 25 μg/mL for eperisone hydrochloride and paracetamol, in mouse plasma. Ciprofloxacin was used as Internal Standard. Results from assay validations show that the method is selective, sensitive and robust. The limit of quantification of the method was 0.5 μg/mL for eperisone hydrochloride and paracetamol, and matrix-matched standard curves showed a good linearity, up to 25 μg/mL with correlation coefficients (r(2))≥ 0.9891. In the entire analytical range the intra and inter-day precision (RSD%) values were ≤ 1.15% and ≤ 1.46% for eperisone hydrochloride, and ≤ 0.35% and ≤ 1.65% for paracetamol. For both analytes the intra and inter-day trueness (bias%) values ranged, respectively, from -5.33% to 4.00% and from -11.4% to -4.00%. The method was successfully tested in pharmacokinetic studies after oral administration in mouse. Furthermore, the application of this method results in a significant reduction in terms of animal number, dosage, and improvement in speed, rate of analysis, and quality of pharmacokinetic parameters related to serial blood sampling. Copyright © 2015 Elsevier B.V. All rights reserved.

  5. Quantification of patulin in fruit leathers by ultra-high-performance liquid chromatography-photodiode array (UPLC-PDA).

    Science.gov (United States)

    Maragos, Chris M; Busman, Mark; Ma, Liang; Bobell, John

    2015-01-01

    Patulin is a mycotoxin commonly found in certain fruit and fruit products. For this reason many countries have established regulatory limits pertaining to, in particular, apple juice and apple products. Fruit leathers are produced by dehydrating fruit puree, leaving a sweet product that has a leathery texture. A recent report in the literature described the detection of patulin at substantial levels in fruit leathers. To investigate this further, an ultra-high-performance liquid chromatography-photodiode array (UPLC-PDA) method was developed for the sensitive detection of patulin in fruit leathers. Investigations were also made of the suitability of direct analysis in real time-mass spectrometry (DART-MS) for detection of patulin from the surface of fruit leathers. Results indicated DART-MS was insufficiently sensitive for quantification from the surface of home-style apple leathers, although patulin spiked onto the surface of leather or peel could be detected. The UPLC-PDA method was used to determine the fate of patulin during the preparation of home-made fruit leathers. Interestingly, when a home-style process was used, the patulin was not destroyed, but rather increased in concentration as the puree was dehydrated. The UPLC-PDA method was also used to screen for patulin in commercial fruit leathers. Of the 36 products tested, 14 were above the limit of detection (3.5 μg kg(-1)) and nine were above the limit of quantification (12 μg kg(-1)). Positive samples were confirmed by UPLC-MS/MS. Only one sample was found above the US regulatory limit for single-strength apple juice products (50 μg kg(-1)). These results suggest patulin can be concentrated during preparation and can be found in fruit leathers. The limited survey suggests that patulin is fairly prevalent in such commercial products, but that the levels are usually low.

  6. A 500-MHz x-ray counting system with a silicon avalanche photodiode

    International Nuclear Information System (INIS)

    Kishimoto, Shunji

    2009-01-01

    In the present measurements using a Si-APD X-ray detector and a 500-MHz counting system, the maximum output rate of 3.3x10 8 s -1 was achieved for 8-keV X-rays in beamline BL-14A of the Photon Factory. A small Si-APD of 4-pF electric capacity was used as the detector device in order to output a pulse of a width shorter than 2 ns on the baseline. For processing the fast pulses, the discriminator and the scaler having a throughput of >500 MHz, were prepared. Since the acceleration frequency at the PF ring was 500.1 MHz and the empty-bunch spacing was 12/312 bunches per circumference, the expected maximum rate was 4.8x10 8s-1 according to the counting model for a pulsed photon source. The reason why the present system did not reach the expected value was the baseline shift at the amplifier outputs. The rise of +0.2 V was observed at a discriminator output of 3.3x10 8 s -1 , while the pulse height was lower than 0.2 V. The baseline shift was caused by an AC coupling circuit in the amplifier. If a DC coupling circuit can be used for the amplifier, instead of the AC coupling circuit, or an active adjustment to compensate the baseline shift is installed, the counting system will show an ideal response. Although the present system including NIM modules was not so compact, we would like to develop a new fast-counting circuit for a Si-APD array detector of more than 100 channels of small pixels, in near future. (author)

  7. Flat-plate solar array project. Volume 2: Silicon material

    Science.gov (United States)

    Lutwack, R.

    1986-10-01

    The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

  8. Flat-plate solar array project. Volume 2: Silicon material

    Science.gov (United States)

    Lutwack, R.

    1986-01-01

    The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

  9. High-performance liquid chromatography ultraviolet-photodiode array detection method for aflatoxin B1 in cattle feed supplements

    Science.gov (United States)

    Mochamad, Lazuardi; Hermanto, Bambang

    2017-01-01

    Aim: The objective of the current study is to determine the concentration of aflatoxin B1 using high-performance liquid chromatography (HPLC) with a photodiode array (PDA) detector. Materials and Methods: Aflatoxin B1 certified reference grade from Trilogy Analytical Laboratory dissolved acetonitrile (ACN) at 10 µg/mL was using standard assessment. HPLC instruments such as ultraviolet-PDA detector used a Shimadzu LC-6AD pump with DGU-20A5 degasser, communication module-20A, and PDA detector SPD-M20A with FRC-10A fraction collector. The HPLC was set isocratic method at 354 nm with a reverse-phase ODS C18 column (LiChrospher® 100 RP-18; diameter, 5 µm) under a 20°C controlled column chamber. Rheodyne® sample loops were performed in 20 µL capacities. The mobile phase was performed at fraction 63:26:11 H2O: methanol:ACN at pH 6.8. A total of 1 kg of feed contained 10% bread crumbs and 30% concentrated, 40% forage, and 20% soybean dregs were using commercials samples. Samples were extracted by ACN and separated with solid phase extraction ODS 1 mL than elution with mobile phase to collect at drying samples performed. The samples were ready to use after added 1 mL mobile phase than injected into the system of HPLC. Results: We found that the retention time of aflatoxin B1 was approximately 10.858 min. Linearity of 0.01-0.08 µg/mL aflatoxin B1 dissolved in mobile phase was obtained at R2=0.9. These results demonstrate that these methods can be used to analyze aflatoxin B1 and gain 89-99% recovery. The limit of detection of this assay was obtained at 3.5 × 10−6 µg/mL. Conclusion: This method was easy to apply and suitable to analyzing at small concentrations of aflatoxin B1 in formulated product of feed cattle. PMID:28919686

  10. Quantitative analysis of flavonols, flavones, and flavanones in fruits, vegetables and beverages by high-performance liquid chromatography with photo-diode array and mass spectrometric detection

    DEFF Research Database (Denmark)

    Justesen, U.; Knuthsen, Pia; Leth, Torben

    1998-01-01

    after acid hydrolysis of freeze-dried food material. Identification was based on retention time, UV and mass spectra by comparison with commercial standards, and the UV peak areas were used for quantitation of the flavonoid contents. Examples of HPLC-MS analyses of orange pulp, tomato, and apple......A high-performance liquid chromatographic (HPLC) separation method viith photo-diode array (PDA) and mass spectrometric (MS) detection was developed to determine and quantify flavonols, flavones, and flavanones in fruits, vegetables and beverages. The compounds were analysed as aglycones, obtained...

  11. Simultaneous determination of 2 aconitum alkaloids and 12 ginsenosides in Shenfu injection by ultraperformance liquid chromatography coupled with a photodiode array detector with few markers to determine multicomponents

    Directory of Open Access Journals (Sweden)

    Ai-Hua Ge

    2015-06-01

    Full Text Available A method with few markers to determine multicomponents was established and validated to evaluate the quality of Shenfu injection by ultraperformance liquid chromatography coupled with a photodiode array detector. The separations were performed on an ACQUITY UPLC BEH C18 (2.1 × 50 mm2, 1.7 μm column. Methanol and 0.1% formic acid aqueous solution were used as the mobile phase. The flow rate was 0.3 mL/min. 2 aconitum alkaloids and 12 ginsenosides could be perfectly separated within 15 minutes. Ginsenoside Rg1 and benzoylmesaconine, the easily available active components, were employed as the maker components to calculate the relative correction factors of other components in Shenfu injection, Panax ginseng and Aconitum carmichaeli. The external standard method was also established to validate the feasibility of the method with few markers to determine multicomponents. Parameter p and the principal component analysis method were employed to investigate the disparities among batches for the effective quality control of Shenfu injection. The results demonstrated that the ultraperformance liquid chromatography coupled with a photodiode array detector method with few markers to determine multicomponents could be used as a powerful tool for the quality evaluation of traditional Chinese medicines and their preparations.

  12. Normal incidence spectrophotometer using high density transmission grating technology and highly efficiency silicon photodiodes for absolute solar EUV irradiance measurements

    Science.gov (United States)

    Ogawa, H. S.; Mcmullin, D.; Judge, D. L.; Korde, R.

    1992-01-01

    New developments in transmission grating and photodiode technology now make it possible to realize spectrometers in the extreme ultraviolet (EUV) spectral region (wavelengths less than 1000 A) which are expected to be virtually constant in their diffraction and detector properties. Time dependent effects associated with reflection gratings are eliminated through the use of free standing transmission gratings. These gratings together with recently developed and highly stable EUV photodiodes have been utilized to construct a highly stable normal incidence spectrophotometer to monitor the variability and absolute intensity of the solar 304 A line. Owing to its low weight and compactness, such a spectrometer will be a valuable tool for providing absolute solar irradiance throughout the EUV. This novel instrument will also be useful for cross-calibrating other EUV flight instruments and will be flown on a series of Hitchhiker Shuttle Flights and on SOHO. A preliminary version of this instrument has been fabricated and characterized, and the results are described.

  13. X-ray-to-current signal conversion characteristics of trench-structured photodiodes for direct-conversion-type silicon X-ray sensor

    International Nuclear Information System (INIS)

    Ariyoshi, Tetsuya; Funaki, Shota; Sakamoto, Kenji; Baba, Akiyoshi; Arima, Yutaka

    2017-01-01

    To reduce the radiation dose required in medical X-ray diagnoses, we propose a high-sensitivity direct-conversion-type silicon X-ray sensor that uses trench-structured photodiodes. This sensor is advantageous in terms of its long device lifetime, noise immunity, and low power consumption because of its low bias voltage. With this sensor, it is possible to detect X-rays with almost 100% efficiency; sensitivity can therefore be improved by approximately 10 times when compared with conventional indirect-conversion-type sensors. In this study, a test chip was fabricated using a single-poly single-metal 0.35 μm process. The formed trench photodiodes for the X-ray sensor were approximately 170 and 300 μm deep. At a bias voltage of 25 V, the absorbed X-ray-to-current signal conversion efficiencies were 89.3% (theoretical limit; 96.7%) at a trench depth of 170 μm and 91.1% (theoretical limit; 94.3%) at a trench depth of 300 μm. (author)

  14. Silicon nanowire arrays as learning chemical vapour classifiers

    International Nuclear Information System (INIS)

    Niskanen, A O; Colli, A; White, R; Li, H W; Spigone, E; Kivioja, J M

    2011-01-01

    Nanowire field-effect transistors are a promising class of devices for various sensing applications. Apart from detecting individual chemical or biological analytes, it is especially interesting to use multiple selective sensors to look at their collective response in order to perform classification into predetermined categories. We show that non-functionalised silicon nanowire arrays can be used to robustly classify different chemical vapours using simple statistical machine learning methods. We were able to distinguish between acetone, ethanol and water with 100% accuracy while methanol, ethanol and 2-propanol were classified with 96% accuracy in ambient conditions.

  15. Piezoresistive silicon thin film sensor array for biomedical applications

    International Nuclear Information System (INIS)

    Alpuim, P.; Correia, V.; Marins, E.S.; Rocha, J.G.; Trindade, I.G.; Lanceros-Mendez, S.

    2011-01-01

    N-type hydrogenated nanocrystalline silicon thin film piezoresistors, with gauge factor - 28, were deposited on rugged and flexible polyimide foils by Hot-wire chemical vapor deposition using a tantalum filament heated to 1750 o C. The piezoresistive response under cyclic quasi-static and dynamical (up to 100 Hz) load conditions is reported. Test structures, consisting of microresistors having lateral dimensions in the range from 50 to 100 μm and thickness of 120 nm were defined in an array by reactive ion etching. Metallic pads, forming ohmic contacts to the sensing elements, were defined by a lift-off process. A readout circuit for the array consisting in a mutiplexer on each row and column of the matrix is proposed. The digital data will be processed, interpreted and stored internally by an ultra low-power micro controller, also responsible for the communication of two-way wireless data, e.g. from inside to outside the human body.

  16. Copper nanorod array assisted silicon waveguide polarization beam splitter.

    Science.gov (United States)

    Kim, Sangsik; Qi, Minghao

    2014-04-21

    We present the design of a three-dimensional (3D) polarization beam splitter (PBS) with a copper nanorod array placed between two silicon waveguides. The localized surface plasmon resonance (LSPR) of a metal nanorod array selectively cross-couples transverse electric (TE) mode to the coupler waveguide, while transverse magnetic (TM) mode passes through the original input waveguide without coupling. An ultra-compact and broadband PBS compared to all-dielectric devices is achieved with the LSPR. The output ports of waveguides are designed to support either TM or TE mode only to enhance the extinction ratios. Compared to silver, copper is fully compatible with complementary metal-oxide-semiconductor (CMOS) technology.

  17. Infrared LED Array For Silicon Strip Detector Qualification

    CERN Document Server

    Dirkes, Guido; Hartmann, Frank; Heier, Stefan; Schwerdtfeger, Wolfgang; Waldschmitt, M; Weiler, K W; Weseler, Siegfried

    2003-01-01

    The enormous amount of silicon strip detector modules for the CMS tracker requires a test-sytem to allow qualification of each individual detector module and its front-end electronics within minutes. The objective is to test the detector with a physical signal. Signals are generated in the detector by illumination with lightpulses emitted by a LED at 950~nm and with a rise time of 10~ns. In order to avoid a detector moving, an array of 64 LEDs is used, overlaping the complete detector width. The total length of an array is 15~cm. The spot size of an individual LED is controlled by apertures to illuminate about 25 strips. Furthermore it is possible to simulate the high leakage current of irradiated sensors by constant illumination of the sensor. This provides an effective mean to identfy pinholes on a sensor.

  18. Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film

    International Nuclear Information System (INIS)

    Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

    2015-01-01

    Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices’ applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H 2 O 2 /HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing. (paper)

  19. Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film.

    Science.gov (United States)

    Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

    2015-04-17

    Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices' applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H2O2/HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing.

  20. SU-F-J-44: Development of a Room Laser Based Real-Time Alignment Monitoring System Using An Array of Photodiodes

    International Nuclear Information System (INIS)

    Noh, Y; Kim, T; Kang, S; Kim, D; Cho, M; Kim, K; Shin, D; Suh, T; Kim, S

    2016-01-01

    Purpose: To develop a real-time alignment monitoring system (RAMS) to compensate for the limitations of the conventional room laser based alignment system, and to verify the feasibility of the RAMS. Methods: The RAMS was composed of a room laser sensing array (RLSA), an analog-todigital converter, and a control PC. In the RLSA, seven photodiodes (each in 1 mm width) are arranged in a pattern that the RAMS provides alignment in 1 mm resolution. It works based on detecting laser light aligned on one of photodiodes. When misaligned, the laser would match with different photodiode(s) giving signal at unexpected location. Thus, how much displaced can be determined. To verify the reproducibility of the system with respect to time as well as repeated set-ups, temporal reproducibility and repeatability test was conducted. The accuracy of the system was tested by obtaining detection signals with varying laser-match positions. Results: The signal of the RAMS was found to be stable with respect to time. The repeatability test resulted in a maximum coefficient of variance of 1.14%, suggesting that the signal of the RAMS was stable over repeated set-ups. In the accuracy test, signals between when the laser was aligned and notaligned with any of sensors could be distinguished by signal intensity. The signals of not-aligned sensors were always below 75% of the signal of the aligned sensor. It was confirmed that the system could detect 1 mm of movement by monitoring the pattern of signals, and could observe the movement of the system in real-time. Conclusion: We developed a room laser based alignment monitoring system. The feasibility test verified that the system is capable of quantitative alignment monitoring in real time. The system is relatively simple, not expensive, and considered to be easily incorporated into conventional room laser systems for real-time alignment monitoring. This research was supported by the Mid-career Researcher Program through NRF funded by the

  1. 10 μ m-thick four-quadrant transmissive silicon photodiodes for beam position monitor application: electrical characterization and gamma irradiation effects

    Science.gov (United States)

    Rafí, J. M.; Pellegrini, G.; Quirion, D.; Hidalgo, S.; Godignon, P.; Matilla, O.; Juanhuix, J.; Fontserè, A.; Molas, B.; Pothin, D.; Fajardo, P.

    2017-01-01

    Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines. Owing to Si absorption, devices thinner than 10 μ m are needed to achieve transmission over 90% for energies above 10 keV . In this work, new segmented four-quadrant diodes for beam alignment purposes are fabricated on both ultrathin (10 μ m-thick) and bulk silicon substrates. Four-quadrant diodes implementing different design parameters as well as auxiliary test structures (single diodes and MOS capacitors) are studied. An extensive electrical characterization, including current-voltage (I-V) and capacitance-voltage (C-V) techniques, is carried out on non-irradiated and gamma-irradiated devices up to 100 Mrad doses. Special attention is devoted to the study of radiation-induced charge build-up in diode interquadrant isolation dielectric, as well as its impact on device interquadrant resistance. Finally, the devices have been characterized with an 8 keV laboratory X-ray source at 108 ph/s and in BL13-XALOC ALBA Synchroton beamline with 1011 ph/s and energies from 6 to 16 keV . Sensitivity, spatial resolution and uniformity of the devices have been evaluated.

  2. Nanofabrication of Arrays of Silicon Field Emitters with Vertical Silicon Nanowire Current Limiters and Self-Aligned Gates

    Science.gov (United States)

    2016-08-19

    limiters, MEMS, NEMS, field emission, cold cathodes (Some figures may appear in colour only in the online journal) 1. Introduction Dense arrays of silicon... attention has been given to densely packed, highly ordered, top-down fabricated, single crystal vertical silicon nanowire devices that are embedded

  3. Improved bandwidth and quantum efficiency in silicon photodiodes using photon-manipulating micro/nanostructures operating in the range of 700-1060 nm

    Science.gov (United States)

    Cansizoglu, Hilal; Gao, Yang; Ghandiparsi, Soroush; Kaya, Ahmet; Perez, Cesar Bartolo; Mayet, Ahmed; Ponizovskaya Devine, Ekaterina; Cansizoglu, Mehmet F.; Yamada, Toshishige; Elrefaie, Aly F.; Wang, Shih-Yuan; Islam, M. Saif

    2017-08-01

    Nanostructures allow broad spectrum and near-unity optical absorption and contributed to high performance low-cost Si photovoltaic devices. However, the efficiency is only a few percent higher than a conventional Si solar cell with thicker absorption layers. For high speed surface illuminated photodiodes, the thickness of the absorption layer is critical for short transit time and RC time. Recently a CMOS-compatible micro/nanohole silicon (Si) photodiode (PD) with more than 20 Gb/s data rate and with 52 % quantum efficiency (QE) at 850 nm was demonstrated. The achieved QE is over 400% higher than a similar Si PD with the same thickness but without absorption enhancement microstructure holes. The micro/nanoholes increases the QE by photon trapping, slow wave effects and generate a collective assemble of modes that radiate laterally, resulting in absorption enhancement and therefore increase in QE. Such Si PDs can be further designed to enhance the bandwidth (BW) of the PDs by reducing the device capacitance with etched holes in the pin junction. Here we present the BW and QE of Si PDs achievable with micro/nanoholes based on a combination of empirical evidence and device modeling. Higher than 50 Gb/s data rate with greater than 40% QE at 850 nm is conceivable in transceivers designed with such Si PDs that are integrated with photon trapping micro and nanostructures. By monolithic integration with CMOS/BiCMOS integrated circuits such as transimpedance amplifiers, equalizers, limiting amplifiers and other application specific integrated circuits (ASIC), the data rate can be increased to more than 50 Gb/s.

  4. Silicon photomultiplier arrays for the LHCb scintillating fibre tracker

    CERN Multimedia

    Girard, Olivier Goran; Kuonen, Axel Kevin; Stramaglia, Maria Elena

    2017-01-01

    For the LHCb detector upgrade in 2019, a large scale scintillating fibre tracker read out with silicon photomultipliers is under construction. The harsh radiation environment (neutron and ionising radiation), the 40MHz read-out rate of the trigger less system and the large detector surface of 320m2 impose many challenges. We present the results from lab tests with 1MeV electrons and from the SPS test facility at CERN for the mulitchannel SiPM array that combines peak photo-detection efficiency of 48% and extremely low correlated noise. The measurements were performed with detectors irradiated with neutrons up to a fluence of 12*1011 neq/cm2 and single photon detection was maintained. First results of the characterization of the pre-series of 500 detectors delivered by Hamamatsu and irradiation studies on a large sample will be included.

  5. Dark noise rates in irradiated silicon photomultiplier arrays

    Energy Technology Data Exchange (ETDEWEB)

    Bachmann, Sebastian; Comerma, Albert; Gerick, David; Han, Xiaoxue; Hansmann-Menzemer, Stephanie; Kecke, Matthieu; Leverington, Blake; Mazorra de Cos, Jose; Mitzel, Dominik; Neuner, Max; Uwer, Ulrich [Physikalisches Institut, Universitaet Heidelberg (Germany); Collaboration: LHCb-Collaboration

    2016-07-01

    The planned downstream tracking system - the Scintillating Fibre Tracker - for the LHCb upgrade uses silicon photomultiplier (SiPM) arrays of 128 channels to read out mats made of 250 μm diameter scintillating fibres. In the LHCb environment the neutron flux degrades the silicon detectors to the edge of an acceptable performance in terms of DCR. Studies have shown that the dark count rate (DCR) of the SiPMs increases linearly with the neutron flux. Towards the end of the designed lifetime of the experiment the DCR per SiPM channel operated at T = -40 C is expected to reach a few MHz after partial annealing. To reduce the impact of the DCR - while at the same time provide efficient hit reconstruction - a clustering algorithm is developed to separate signal from noise. A brief introduction into the custom designed read-out ASIC and the cluster algorithm are presented along with the studies of the dark count cluster rate dependency on the neutron flux, the DCR per channel and the effects of the applied signal thresholds for the clustering algorithm.

  6. Supercritical fluid chromatography-photodiode array detection-electrospray ionization mass spectrometry as a framework for impurity fate mapping in the development and manufacture of drug substances.

    Science.gov (United States)

    Pirrone, Gregory F; Mathew, Rose M; Makarov, Alexey A; Bernardoni, Frank; Klapars, Artis; Hartman, Robert; Limanto, John; Regalado, Erik L

    2018-03-30

    Impurity fate and purge studies are critical in order to establish an effective impurity control strategy for approval of the commercial filing application of new medicines. Reversed phase liquid chromatography-diode array-mass spectrometry (RPLC-DAD-MS) has traditionally been the preferred tool for impurity fate mapping. However, separation of some reaction mixtures by LC can be very problematic requiring combination LC-UV for area % analysis and a different LC-MS method for peak identification. In addition, some synthetic intermediates might be chemically susceptible to the aqueous conditions used in RPLC separations. In this study, the use of supercritical fluid chromatography-photodiode array-electrospray ionization mass spectrometry (SFC-PDA-ESIMS) for fate and purge of two specified impurities in the 1-uridine starting material from the synthesis of a bis-piv 2'keto-uridine, an intermediate in the synthesis of uprifosbuvir, a treatment under investigation for chronic hepatitis C infection. Readily available SFC instrumentation with a Chiralpak IC column (4.6 × 150 mm, 3 μm) and ethanol: carbon dioxide based mobile phase eluent enabled the separation of closely related components from complex reaction mixtures where RLPC failed to deliver optimal chromatographic performance. These results illustrate how SFC combined with PDA and ESI-MS detection can become a powerful tool for direct impurity fate mapping across multiple reaction steps. Copyright © 2018 Elsevier B.V. All rights reserved.

  7. Low-Noise, UV-to-SWIR Broadband Photodiodes for Large-Format Focal Plane Array Sensors, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Broadband focal plane arrays, operating in UV-to-SWIR wavelength range, are required for atmospheric monitoring of greenhouse gases. Currently, separate image...

  8. Performances of photodiode detectors for top and bottom counting detectors of ISS-CREAM experiment

    Energy Technology Data Exchange (ETDEWEB)

    Hyun, H.J. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Anderson, T. [Pennsylvania State University, University Park, PA 16802 (United States); Angelaszek, D. [University of Maryland, College Park, MD 20740 (United States); Baek, S.J. [Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Copley, M. [University of Maryland, College Park, MD 20740 (United States); Coutu, S. [Pennsylvania State University, University Park, PA 16802 (United States); Han, J.H.; Huh, H.G. [University of Maryland, College Park, MD 20740 (United States); Hwang, Y.S. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Im, S. [Pennsylvania State University, University Park, PA 16802 (United States); Jeon, H.B.; Kah, D.H.; Kang, K.H.; Kim, H.J. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Kim, K.C.; Kwashnak, K. [University of Maryland, College Park, MD 20740 (United States); Lee, J. [Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, M.H. [University of Maryland, College Park, MD 20740 (United States); Link, J.T. [NASA GSFC, Greenbelt, MD 20771 (United States); CRESST(USRA), Columbia, MD 21044 (United States); Lutz, L. [University of Maryland, College Park, MD 20740 (United States); and others

    2015-07-01

    The Cosmic Ray Energetics and Mass (CREAM) experiment at the International Space Station (ISS) aims to elucidate the source and acceleration mechanisms of high-energy cosmic rays by measuring the energy spectra from protons to iron. The instrument is planned for launch in 2015 at the ISS, and it comprises a silicon charge detector, a carbon target, top and bottom counting detectors, a calorimeter, and a boronated scintillator detector. The top and bottom counting detectors are developed for separating the electrons from the protons, and each of them comprises a plastic scintillator and a 20×20 silicon photodiode array. Each photodiode is 2.3 cm×2.3 cm in size and exhibits good electrical characteristics. The leakage current is measured to be less than 20 nA/cm{sup 2} at an operating voltage. The signal-to-noise ratio is measured to be better than 70 using commercial electronics, and the radiation hardness is tested using a proton beam. A signal from the photodiode is amplified by VLSI (very-large-scale integration) charge amp/hold circuits, the VA-TA viking chip. Environmental tests are performed using whole assembled photodiode detectors of a flight version. Herein, we present the characteristics of the developed photodiode along with the results of the environmental tests.

  9. Performances of photodiode detectors for top and bottom counting detectors of ISS-CREAM experiment

    International Nuclear Information System (INIS)

    Hyun, H.J.; Anderson, T.; Angelaszek, D.; Baek, S.J.; Copley, M.; Coutu, S.; Han, J.H.; Huh, H.G.; Hwang, Y.S.; Im, S.; Jeon, H.B.; Kah, D.H.; Kang, K.H.; Kim, H.J.; Kim, K.C.; Kwashnak, K.; Lee, J.; Lee, M.H.; Link, J.T.; Lutz, L.

    2015-01-01

    The Cosmic Ray Energetics and Mass (CREAM) experiment at the International Space Station (ISS) aims to elucidate the source and acceleration mechanisms of high-energy cosmic rays by measuring the energy spectra from protons to iron. The instrument is planned for launch in 2015 at the ISS, and it comprises a silicon charge detector, a carbon target, top and bottom counting detectors, a calorimeter, and a boronated scintillator detector. The top and bottom counting detectors are developed for separating the electrons from the protons, and each of them comprises a plastic scintillator and a 20×20 silicon photodiode array. Each photodiode is 2.3 cm×2.3 cm in size and exhibits good electrical characteristics. The leakage current is measured to be less than 20 nA/cm 2 at an operating voltage. The signal-to-noise ratio is measured to be better than 70 using commercial electronics, and the radiation hardness is tested using a proton beam. A signal from the photodiode is amplified by VLSI (very-large-scale integration) charge amp/hold circuits, the VA-TA viking chip. Environmental tests are performed using whole assembled photodiode detectors of a flight version. Herein, we present the characteristics of the developed photodiode along with the results of the environmental tests

  10. Silicon-Based Integration of Groups III, IV, V Chemical Vapor Depositions in High-Quality Photodiodes

    NARCIS (Netherlands)

    Sammak, A.

    2012-01-01

    Heterogeneous integration of III-V semiconductors with silicon (Si) technology is an interesting approach to utilize the advantages of both high-speed photonic and electronic properties. The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with

  11. Low cost silicon solar array project large area silicon sheet task: Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

    1977-01-01

    Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

  12. Measuring levels of biogenic amines and their metabolites in rat brain tissue using high-performance liquid chromatography with photodiode array detection.

    Science.gov (United States)

    Gu, Min-Jung; Jeon, Ji-Hyun; Oh, Myung Sook; Hong, Seon-Pyo

    2016-01-01

    We developed a method to detect biogenic amines and their metabolites in rat brain tissue using simultaneous high-performance liquid chromatography and a photodiode array detection. Measurements were made using a Hypersil Gold C-18 column (250 × 2.1 mm, 5 µm). The mobile phase was 5 mM perchloric acid containing 5 % acetonitrile. The correlation coefficient was 0.9995-0.9999. LODs (S/N = 3) and LOQs (S/N = 10) were as follows: dopamine 0.4 and 1.3 pg, 3, 4-dihydroxyphenylacetic acid 8.4 and 28.0 pg, serotonin 0.4 and 1.3 pg, 5-hydroxyindolacetic acid 3.4 and 11.3 pg, and homovanillic acid 8.4 and 28.0 pg. This method does not require derivatization steps, and is more sensitive than the widely used HPLC-UV method.

  13. Nanoscale phosphorus atom arrays created using STM for the fabrication of a silicon based quantum computer.

    Energy Technology Data Exchange (ETDEWEB)

    O' Brien, J. L. (Jeremy L.); Schofield, S. R. (Steven R.); Simmons, M. Y. (Michelle Y.); Clark, R. G. (Robert G.); Dzurak, A. S. (Andrew S.); Curson, N. J. (Neil J.); Kane, B. E. (Bruce E.); McAlpine, N. S. (Neal S.); Hawley, M. E. (Marilyn E.); Brown, G. W. (Geoffrey W.)

    2001-01-01

    Quantum computers offer the promise of formidable computational power for certain tasks. Of the various possible physical implementations of such a device, silicon based architectures are attractive for their scalability and ease of integration with existing silicon technology. These designs use either the electron or nuclear spin state of single donor atoms to store quantum information. Here we describe a strategy to fabricate an array of single phosphorus atoms in silicon for the construction of such a silicon based quantum computer. We demonstrate the controlled placement of single phosphorus bearing molecules on a silicon surface. This has been achieved by patterning a hydrogen mono-layer 'resist' with a scanning tunneling microscope (STM) tip and exposing the patterned surface to phosphine (PH3) molecules. We also describe preliminary studies into a process to incorporate these surface phosphorus atoms into the silicon crystal at the array sites. Keywords: Quantum computing, nanotechriology scanning turincling microscopy, hydrogen lithography

  14. Fabrication of High-Frequency pMUT Arrays on Silicon Substrates

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Zawada, Tomasz; Hansen, Karsten

    2010-01-01

    A novel technique based on silicon micromachining for fabrication of linear arrays of high-frequency piezoelectric micromachined ultrasound transducers (pMUT) is presented. Piezoelectric elements are formed by deposition of lead zirconia titanate into etched features of a silicon substrate...

  15. Amorphous silicon carbide ultramicroelectrode arrays for neural stimulation and recording

    Science.gov (United States)

    Deku, Felix; Cohen, Yarden; Joshi-Imre, Alexandra; Kanneganti, Aswini; Gardner, Timothy J.; Cogan, Stuart F.

    2018-02-01

    Objective. Foreign body response to indwelling cortical microelectrodes limits the reliability of neural stimulation and recording, particularly for extended chronic applications in behaving animals. The extent to which this response compromises the chronic stability of neural devices depends on many factors including the materials used in the electrode construction, the size, and geometry of the indwelling structure. Here, we report on the development of microelectrode arrays (MEAs) based on amorphous silicon carbide (a-SiC). Approach. This technology utilizes a-SiC for its chronic stability and employs semiconductor manufacturing processes to create MEAs with small shank dimensions. The a-SiC films were deposited by plasma enhanced chemical vapor deposition and patterned by thin-film photolithographic techniques. To improve stimulation and recording capabilities with small contact areas, we investigated low impedance coatings on the electrode sites. The assembled devices were characterized in phosphate buffered saline for their electrochemical properties. Main results. MEAs utilizing a-SiC as both the primary structural element and encapsulation were fabricated successfully. These a-SiC MEAs had 16 penetrating shanks. Each shank has a cross-sectional area less than 60 µm2 and electrode sites with a geometric surface area varying from 20 to 200 µm2. Electrode coatings of TiN and SIROF reduced 1 kHz electrode impedance to less than 100 kΩ from ~2.8 MΩ for 100 µm2 Au electrode sites and increased the charge injection capacities to values greater than 3 mC cm‑2. Finally, we demonstrated functionality by recording neural activity from basal ganglia nucleus of Zebra Finches and motor cortex of rat. Significance. The a-SiC MEAs provide a significant advancement in the development of microelectrodes that over the years has relied on silicon platforms for device manufacture. These flexible a-SiC MEAs have the potential for decreased tissue damage and reduced

  16. Determination of ascorbic acid by high performance liquid chromatography (H. P. L. C.) using photodiode array detector

    International Nuclear Information System (INIS)

    Elbashier, E. E.; Greenway, G. M; Townshend, A.

    2005-01-01

    This paper describes a simple and rapid method for the determination of vitamin C using H. P. L. C. A reversed phase C 1 8 column was used to perform ion pairing chromatography, the ion pairing agent tri-n-butylamine and mobile phase 90:10 phospate buffer (pH 4.5) to methanol. A diode array spectrophotometric detector facilitated method development allowing chromatograms to be obtained for range of wavelengths. A linear calibration curve was obtained in range 0-50 μg/ml with correlation coefficient of 0.999 and detection limit was 1.5 μg/ml and relative standard deviation was 1.8% for ten samples at 10μg/ml.(Author)

  17. Conception and modelling of photo-detection pixels. PIN photodiodes conceived in amorphous silicon for particles detection

    International Nuclear Information System (INIS)

    Negru, R.

    2008-06-01

    The research done has revealed that the a-Si:H is a material ideally suited for the detection of particles, while being resistant to radiation. It also has a low manufacturing cost, is compatible with existing technology and can be deposited over large areas. Thus, despite the low local mobility of charges (30 cm 2 /V/s), a-Si:H is a material of particular interest for manufacturing high-energy particle detection pixels. As a consequence of this, we have studied the feasibility of an experimental pixel stacked structure based on a-Si:H as a basic sensor element for an electromagnetic calorimeter. The structure of such a pixel consists of different components. First, a silicon PIN diode in a-Si:H is fabricated, followed by a bias resistor and a decoupling capacitor. Before such a structure is made and in order to optimize its design, it is essential to have an efficient behavioural model of the various components. Thus, our primary goal was to develop a two-dimensional physical model of the PIN diode using the SILVACO finite element calculation software. This a-Si:H PIN diode two-dimensional physical model allowed us to study the problem of crosstalk between pixels in a matrix structure of detectors. In particular, we concentrated on the leakage current and the current generated in the volume between neighbouring pixels. The successful implementation of this model in SPICE ensures its usefulness in other professional simulators and especially its integration into a complete electronic structure (PIN diode, bias resistor, decoupling capacity and low noise amplifier). Thanks to these modelling tools, we were able to simulate PIN diode structures in a-Si:H with different thicknesses and different dimensions. These simulations have allowed us to predict that the thicker structures are relevant to the design of the pixel detectors for high energy physics. Applications in astronomy, medical imaging and the analysis of the failure of silicon integrated circuits, can also

  18. Enhancing the far-UV sensitivity of silicon CMOS imaging arrays

    Science.gov (United States)

    Retherford, K. D.; Bai, Yibin; Ryu, Kevin K.; Gregory, J. A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winter, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2014-07-01

    We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. This project was motivated by initial measurements at Southwest Research Institute (SwRI) of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures described in Bai et al., SPIE, 2008, which revealed a promising QE in the 100-200 nm range as reported in Davis et al., SPIE, 2012. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include: 1) Representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory (LL); 2) Preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; 3) Detector fabrication was completed through the pre-MBE step; and 4) Initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. Early results suggest that potential challenges in optimizing the UV-sensitivity of silicon PIN type CMOS devices, compared with similar UV enhancement methods established for CCDs, have been mitigated through our newly developed methods. We will discuss the potential advantages of our approach and briefly describe future development steps.

  19. Plasma jet array treatment to improve the hydrophobicity of contaminated HTV silicone rubber

    Science.gov (United States)

    Zhang, Ruobing; Han, Qianting; Xia, Yan; Li, Shuang

    2017-10-01

    An atmospheric-pressure plasma jet array specially designed for HTV silicone rubber treatment is reported in this paper. Stable plasma containing highly energetic active particles was uniformly generated in the plasma jet array. The discharge pattern was affected by the applied voltage. The divergence phenomenon was observed at low gas flow rate and abated when the flow rate increased. Temperature of the plasma plume is close to room temperature which makes it feasible for temperature-sensitive material treatment. Hydrophobicity of contaminated HTV silicone rubber was significantly improved after quick exposure of the plasma jet array, and the effective treatment area reached 120 mm × 50 mm (length × width). Reactive particles in the plasma accelerate accumulation of the hydrophobic molecules, namely low molecular weight silicone chains, on the contaminated surface, which result in a hydrophobicity improvement of the HTV silicone rubber.

  20. Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

    International Nuclear Information System (INIS)

    Li Kai-Li; An Jun-Ming; Zhang Jia-Shun; Wang Yue; Wang Liang-Liang; Li Jian-Guang; Wu Yuan-Da; Yin Xiao-Jie; Hu Xiong-Wei

    2016-01-01

    The factors influencing the crosstalk of silicon-on-insulator (SOI) nanowire arrayed waveguide grating (AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width. (paper)

  1. Decarboxylation Study of Acidic Cannabinoids: A Novel Approach Using Ultra-High-Performance Supercritical Fluid Chromatography/Photodiode Array-Mass Spectrometry

    Science.gov (United States)

    Wang, Mei; Wang, Yan-Hong; Avula, Bharathi; Radwan, Mohamed M.; Wanas, Amira S.; van Antwerp, John; Parcher, Jon F.; ElSohly, Mahmoud A.; Khan, Ikhlas A.

    2016-01-01

    Abstract Introduction: Decarboxylation is an important step for efficient production of the major active components in cannabis, for example, Δ9-tetrahydrocannabinol (Δ9-THC), cannabidiol (CBD), and cannabigerol (CBG). These cannabinoids do not occur in significant concentrations in cannabis but can be formed by decarboxylation of their corresponding acids, the predominant cannabinoids in the plant. Study of the kinetics of decarboxylation is of importance for phytocannabinoid isolation and dosage formulation for medical use. Efficient analytical methods are essential for simultaneous detection of both neutral and acidic cannabinoids. Methods: C. sativa extracts were used for the studies. Decarboxylation conditions were examined at 80°C, 95°C, 110°C, 130°C, and 145°C for different times up to 60 min in a vacuum oven. An ultra-high performance supercritical fluid chromatography/photodiode array-mass spectrometry (UHPSFC/PDA-MS) method was used for the analysis of acidic and neutral cannabinoids before and after decarboxylation. Results: Decarboxylation at different temperatures displayed an exponential relationship between concentration and time indicating a first-order or pseudo-first-order reaction. The rate constants for Δ9-tetrahydrocannabinolic acid-A (THCA-A) were twice those of the cannabidiolic acid (CBDA) and cannabigerolic acid (CBGA). Decarboxylation of THCA-A was forthright with no side reactions or by-products. Decarboxylation of CBDA and CBGA was not as straightforward due to the unexplained loss of reactants or products. Conclusion: The reported UHPSFC/PDA-MS method provided consistent and sensitive analysis of phytocannabinoids and their decarboxylation products and degradants. The rate of change of acidic cannabinoid concentrations over time allowed for determination of rate constants. Variations of rate constants with temperature yielded values for reaction energy. PMID:28861498

  2. Influence of Nonpolar Substances on the Extraction Efficiency of Six Alkaloids in Zoagumhwan Investigated by Ultra Performance Liquid Chromatography and Photodiode Array Detection

    Directory of Open Access Journals (Sweden)

    Shijing Liu

    2012-11-01

    Full Text Available A reverse phase ultra performance liquid chromatography and photodiode array (UPLC-PDA detection method was established for the determination of six alkaloids in Zoagumhwan (ZGW, and further for investigating the influence of nonpolar substances on the extraction efficiency of these alkaloids. The method was based on a BEH C18 (50 mm × 2.1 mm, 1.7 μm column and mobile phase of aqueous phosphoric acid and acetonitrile including 0.05% buffer solution under gradient elution. ZGW samples of ZGW I, II, III and IV were obtained and prepared by pre-processing the crude materials of Coptidis rhizoma and Evodiae fructus using four technologies, namely direct water decoction, removal of nonpolar substances in Evodiae fructus by supercritical fluid extraction (SFE, removal of nonpolar substances in ZGW by SFE and removal of nonpolar substances in ZGW by steam distillation. The developed and validated UPLC-PDA method was precise, accurate and sensitive enough based on the facts that the six alkaloids showed good regression (r > 0.9998, the limit of detections and quantifications for six alkaloids were less than 28.8 and 94.5 ng/mL, respectively, and the recovery was in the range of 98.56%–103.24%. The sequence of the total contents of six alkaloids in these samples was ZGW II > ZGW IV > ZGW III > ZGW I. ZGW II, in which nonpolar substances, including essential oils, were firstly removed from Evodiae fructus by SFE, had the highest content of the total alkaloids, indicating that extraction efficiency of the total alkaloids could be remarkably increased after Evodiae fructus being extracted by SFE.

  3. Multifunctional porous silicon nanopillar arrays: antireflection, superhydrophobicity, photoluminescence, and surface-enhanced Raman scattering

    International Nuclear Information System (INIS)

    Kiraly, Brian; Yang, Shikuan; Huang, Tony Jun

    2013-01-01

    We have fabricated porous silicon nanopillar arrays over large areas with a rapid, simple, and low-cost technique. The porous silicon nanopillars show unique longitudinal features along their entire length and have porosity with dimensions on the single-nanometer scale. Both Raman spectroscopy and photoluminescence data were used to determine the nanocrystallite size to be <3 nm. The porous silicon nanopillar arrays also maintained excellent ensemble properties, reducing reflection nearly fivefold from planar silicon in the visible range without any optimization, and approaching superhydrophobic behavior with increasing aspect ratio, demonstrating contact angles up to 138°. Finally, the porous silicon nanopillar arrays were made into sensitive surface-enhanced Raman scattering (SERS) substrates by depositing metal onto the pillars. The SERS performance of the substrates was demonstrated using a chemical dye Rhodamine 6G. With their multitude of properties (i.e., antireflection, superhydrophobicity, photoluminescence, and sensitive SERS), the porous silicon nanopillar arrays described here can be valuable in applications such as solar harvesting, electrochemical cells, self-cleaning devices, and dynamic biological monitoring. (paper)

  4. Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

    Science.gov (United States)

    Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2015-10-01

    We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

  5. Low-energy X-ray and gamma spectrometry using silicon photodiodes; Espectrometria de raios X e gama de baixa energia utilizando fotodiodos de silicio

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Iran Jose Oliveira da

    2000-08-01

    The use of semiconductor detectors for radiation detection has increased in recent years due to advantages they present in comparison to other types of detectors. As the working principle of commercially available photodiodes is similar to the semiconductor detector, this study was carried out to evaluate the use of Si photodiodes for low energy x-ray and gamma spectrometry. The photodiodes investigated were SFH-205, SFH-206, BPW-34 and XRA-50 which have the following characteristics: active area of 0,07 cm{sup 2} and 0,25 cm{sup 2}, thickness of the depletion ranging from 100 to 200 {mu}m and junction capacitance of 72 pF. The photodiode was polarized with a reverse bias and connected to a charge sensitive pre-amplifier, followed by a amplifier and multichannel pulse analyzer. Standard radiation source used in this experiment were {sup 241} Am, {sup 109} Cd, {sup 57} Co and {sup 133} Ba. The X-ray fluorescence of lead and silver were also measured through K- and L-lines. All the measurements were made with the photodiodes at room temperature.The results show that the responses of the photodiodes very linear by the x-ray energy and that the energy resolution in FWHM varied between 1.9 keV and 4.4 keV for peaks corresponding to 11.9 keV to 59 keV. The BPW-34 showed the best energy resolution and the lower dark current. The full-energy peak efficiency was also determined and it was observed that the peak efficiency decreases rapidly above 50 keV. The resolution and efficiency are similar to the values obtained with other semiconductor detectors, evidencing that the photodiodes used in that study can be used as a good performance detector for low energy X-ray and gamma spectrometry. (author)

  6. A high-sensitivity, fast-response, rapid-recovery p–n heterojunction photodiode based on rutile TiO{sub 2} nanorod array on p-Si(1 1 1)

    Energy Technology Data Exchange (ETDEWEB)

    Selman, Abbas M., E-mail: alabbasiabbas@yahoo.co.uk [Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia); Department of Pharmacology and Toxicology, College of Pharmacy, University of Kufa, Najaf (Iraq); Hassan, Z.; Husham, M.; Ahmed, Naser M. [Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia)

    2014-06-01

    The growth and characterization of a p–n heterojunction photodiode were studied. This photodiode was based on rutile TiO{sub 2} nanorods (NRs) grown on p-type (1 1 1)-oriented silicon substrate seeded with a TiO{sub 2} layer synthesized by radio-frequency (RF) reactive magnetron sputtering. Chemical bath deposition (CBD) was performed to grow rutile TiO{sub 2} NRs on Si substrate. The structural and optical properties of the sample were studied by X-ray diffraction (XRD) and field emission-scanning electron microscopy (FESEM) analyses. Results showed the tetragonal rutile structure of the synthesized TiO{sub 2} NRs. Optical properties were further examined by photoluminescence spectroscopy, and a high-intensity UV peak centered at around 392 nm compared with visible defect peaks centered at 527 and 707 nm was observed. Upon exposure to 395 nm light (2.3 mW/cm) at five-bias voltage, the device showed 2.9 × 10{sup 2} sensitivity. In addition, the internal gain of the photodiode was 3.92, and the photoresponse peak was 106 mA/W. Furthermore, the photocurrent was 3.06 × 10{sup −4} A. The response and the recovery times were calculated to be 10.4 and 11 ms, respectively, upon illumination to a pulse UV light (405 nm, 0.22 mW/cm{sup 2}) at five-bias voltage. All of these results demonstrate that this high-quality photodiode can be a promising candidate as a low-cost UV photodetector for commercially integrated photoelectronic applications.

  7. Surface Plasmon Enhanced Light Trapping in Metal/Silicon Nanobowl Arrays for Thin Film Photovoltaics

    Directory of Open Access Journals (Sweden)

    Ruinan Sun

    2017-01-01

    Full Text Available Enhancing the light absorption in thin film silicon solar cells with nanophotonic and plasmonic structures is important for the realization of high efficiency solar cells with significant cost reduction. In this work, we investigate periodic arrays of conformal metal/silicon nanobowl arrays (MSNBs for light trapping applications in silicon solar cells. They exhibited excellent light-harvesting ability across a wide range of wavelengths up to infrared regimes. The optimized structure (MSNBsH covered by SiO2 passivation layer and hemisphere Ag back reflection layer has a maximal short-circuit density (Jsc 25.5 mA/cm2, which is about 88.8% higher than flat structure counterpart, and the light-conversion efficiency (η is increased two times from 6.3% to 12.6%. The double-side textures offer a promising approach to high efficiency ultrathin silicon solar cells.

  8. Cobalt nanosheet arrays supported silicon film as anode materials for lithium ion batteries

    International Nuclear Information System (INIS)

    Huang, X.H.; Wu, J.B.; Cao, Y.Q.; Zhang, P.; Lin, Y.; Guo, R.Q.

    2016-01-01

    Cobalt nanosheet arrays supported silicon film is prepared and used as anode materials for lithium ion batteries. The film is fabricated using chemical bath deposition, hydrogen reduction and radio-frequency magnetron sputtering techniques. The microstructure and morphology are characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). In this composite film, the silicon layer is supported by interconnected aligned cobalt nanosheet arrays that act as the three-dimensional current collector and buffering network. The electrochemical performance as anode materials for lithium ion batteries is investigated by cyclic voltammetry (CV) and galvanostatic charge-discharge tests. The results show that the film prepared by sputtering for 1500 s exhibits high capacity, good rate capability and stable cycle ability. It is believed that the cobalt nanosheet arrays play important roles in the electrochemical performance of the silicon layer.

  9. Characterization of X3 Silicon Detectors for the ELISSA Array at ELI-NP

    Science.gov (United States)

    Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Cognata, M. La; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; Spitaleri, C.; State, A.; Xu, Y.

    2018-01-01

    Position-sensitive silicon strip detectors represent one of the best solutions for the detection of charged particles as they provide good energy and position resolution over a large range of energies. A silicon array coupled with the gamma beams at the ELI-NP facility would allow measuring photodissociation reactions of interest for Big Bang Nucleosynthesis and on heavy nuclei intervening in the p-process. Forty X3 detectors for our ELISSA (ELI-NP Silicon Strip Detectors Array) project have been recently purchased and tested. We investigated several specifications, such as leakage currents, depletion voltage, and detector stability under vacuum. The energy and position resolution, and ballistic deficit were measured and analyzed. This paper presents the main results of our extensive testing. The measured energy resolution for the X3 detectors is better than results published for similar arrays (ANASEN or ORRUBA).

  10. Formation of array microstructures on silicon by multibeam interfered femtosecond laser pulses

    International Nuclear Information System (INIS)

    Zhao Quanzhong; Qiu Jianrong; Zhao Chongjun; Jiang Xiongwei; Zhu Congshan

    2005-01-01

    We report on an optical interference method to fabricate array microstructures on the surface of silicon wafers by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed microstructures with micrometer-order were fabricated. The diffraction characteristics of the fabricated structures were evaluated. The present technique allows one-step realization of functional optoelectronic devices on silicon surface

  11. Silicon monolithic microchannel-cooled laser diode array

    International Nuclear Information System (INIS)

    Skidmore, J. A.; Freitas, B. L.; Crawford, J.; Satariano, J.; Utterback, E.; DiMercurio, L.; Cutter, K.; Sutton, S.

    2000-01-01

    A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degree sign C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm 2 is achieved cw at an emission wavelength of ∼808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (c) 2000 American Institute of Physics

  12. Two-way and three-way approaches to ultra high performance liquid chromatography-photodiode array dataset for the quantitative resolution of a two-component mixture containing ciprofloxacin and ornidazole.

    Science.gov (United States)

    Dinç, Erdal; Ertekin, Zehra Ceren; Büker, Eda

    2016-09-01

    Two-way and three-way calibration models were applied to ultra high performance liquid chromatography with photodiode array data with coeluted peaks in the same wavelength and time regions for the simultaneous quantitation of ciprofloxacin and ornidazole in tablets. The chromatographic data cube (tensor) was obtained by recording chromatographic spectra of the standard and sample solutions containing ciprofloxacin and ornidazole with sulfadiazine as an internal standard as a function of time and wavelength. Parallel factor analysis and trilinear partial least squares were used as three-way calibrations for the decomposition of the tensor, whereas three-way unfolded partial least squares was applied as a two-way calibration to the unfolded dataset obtained from the data array of ultra high performance liquid chromatography with photodiode array detection. The validity and ability of two-way and three-way analysis methods were tested by analyzing validation samples: synthetic mixture, interday and intraday samples, and standard addition samples. Results obtained from two-way and three-way calibrations were compared to those provided by traditional ultra high performance liquid chromatography. The proposed methods, parallel factor analysis, trilinear partial least squares, unfolded partial least squares, and traditional ultra high performance liquid chromatography were successfully applied to the quantitative estimation of the solid dosage form containing ciprofloxacin and ornidazole. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Laser desorption ionization and peptide sequencing on laser induced silicon microcolumn arrays

    Science.gov (United States)

    Vertes, Akos [Reston, VA; Chen, Yong [San Diego, CA

    2011-12-27

    The present invention provides a method of producing a laser-patterned silicon surface, especially silicon wafers for use in laser desorption ionization (LDI-MS) (including MALDI-MS and SELDI-MS), devices containing the same, and methods of testing samples employing the same. The surface is prepared by subjecting a silicon substrate to multiple laser shots from a high-power picosecond or femtosecond laser while in a processing environment, e.g., underwater, and generates a remarkable homogenous microcolumn array capable of providing an improved substrate for LDI-MS.

  14. Flat-plate solar array project. Volume 3: Silicon sheet: Wafers and ribbons

    Science.gov (United States)

    Briglio, A.; Dumas, K.; Leipold, M.; Morrison, A.

    1986-01-01

    The primary objective of the Silicon Sheet Task of the Flat-Plate Solar Array (FSA) Project was the development of one or more low cost technologies for producing silicon sheet suitable for processing into cost-competitive solar cells. Silicon sheet refers to high purity crystalline silicon of size and thickness for fabrication into solar cells. Areas covered in the project were ingot growth and casting, wafering, ribbon growth, and other sheet technologies. The task made and fostered significant improvements in silicon sheet including processing of both ingot and ribbon technologies. An additional important outcome was the vastly improved understanding of the characteristics associated with high quality sheet, and the control of the parameters required for higher efficiency solar cells. Although significant sheet cost reductions were made, the technology advancements required to meet the task cost goals were not achieved.

  15. Effects of pillar height and junction depth on the performance of radially doped silicon pillar arrays for solar energy applications

    NARCIS (Netherlands)

    Elbersen, R.; Vijselaar, Wouter Jan, Cornelis; Tiggelaar, Roald M.; Gardeniers, Johannes G.E.; Huskens, Jurriaan

    2016-01-01

    The effects of pillar height and junction depth on solar cell characteristics are investigated to provide design rules for arrays of such pillars in solar energy applications. Radially doped silicon pillar arrays are fabricated by deep reactive ion etching of silicon substrates followed by the

  16. Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

    Science.gov (United States)

    Vertes, Akos; Walker, Bennett N.

    2013-09-10

    The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

  17. Structure and field emission of graphene layers on top of silicon nanowire arrays

    International Nuclear Information System (INIS)

    Huang, Bohr-Ran; Chan, Hui-Wen; Jou, Shyankay; Chen, Guan-Yu; Kuo, Hsiu-An; Song, Wan-Jhen

    2016-01-01

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  18. Structure and field emission of graphene layers on top of silicon nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Bohr-Ran; Chan, Hui-Wen [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Jou, Shyankay, E-mail: sjou@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Chen, Guan-Yu [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Kuo, Hsiu-An; Song, Wan-Jhen [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

    2016-01-30

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  19. Ordered arrays of embedded Ga nanoparticles on patterned silicon substrates

    International Nuclear Information System (INIS)

    Bollani, M; Bietti, S; Sanguinetti, S; Frigeri, C; Chrastina, D; Reyes, K; Smereka, P; Millunchick, J M; Vanacore, G M; Tagliaferri, A; Burghammer, M

    2014-01-01

    We fabricate site-controlled, ordered arrays of embedded Ga nanoparticles on Si, using a combination of substrate patterning and molecular-beam epitaxial growth. The fabrication process consists of two steps. Ga droplets are initially nucleated in an ordered array of inverted pyramidal pits, and then partially crystallized by exposure to an As flux, which promotes the formation of a GaAs shell that seals the Ga nanoparticle within two semiconductor layers. The nanoparticle formation process has been investigated through a combination of extensive chemical and structural characterization and theoretical kinetic Monte Carlo simulations. (papers)

  20. Development and application of a validated stability-indicating high-performance liquid chromatographic method using photodiode array detection for simultaneous determination of granisetron, methylparaben, propylparaben, sodium benzoate, and their main degradation products in oral pharmaceutical preparations.

    Science.gov (United States)

    Hewala, Ismail; El-Fatatry, Hamed; Emam, Ehab; Mabrouk, Mokhtar

    2011-01-01

    A simple, rapid, and sensitive RP-HPLC method using photodiode array detection was developed and validated for the simultaneous determination of granisetron hydrochloride, 1-methyl-1H-indazole-3-carboxylic acid (the main degradation product of granisetron), sodium benzoate, methylparaben, propylparaben, and 4-hydroxybenzoic acid (the main degradation product of parabens) in granisetron oral drops and solutions. The separation of the compounds was achieved within 8 min on a SymmetryShield RP18 column (100 x 4.6 mm id, 3.5 microm particle size) using the mobile phase acetonitrile--0.05 M KH2PO4 buffered to pH 3 using H3PO4 (3+7, v/v). The photodiode array detector was used to test the purity of the peaks, and the chromatograms were extracted at 240 nm. The method was validated, and validation acceptance criteria were met in all cases. The robust method was successfully applied to the determination of granisetron and preservatives, as well as their degradation products in different batches of granisetron oral drops and solutions. The method proved to be sensitive for determination down to 0.04% (w/w) of granisetron degradation product relative to granisetron and 0.03% (w/w) 4-hydroxybenzoic acid relative to total parabens.

  1. Materials preparation and fabrication of pyroelectric polymer/silicon MOSFET detector arrays. Final report

    International Nuclear Information System (INIS)

    Bloomfield, P.

    1992-01-01

    The authors have delivered several 64-element linear arrays of pyroelectric elements fully integrated on silicon wafers with MOS readout devices. They have delivered detailed drawings of the linear arrays to LANL. They have processed a series of two inch wafers per submitted design. Each two inch wafer contains two 64 element arrays. After spin-coating copolymer onto the arrays, vacuum depositing the top electrodes, and polarizing the copolymer films so as to make them pyroelectrically active, each wafer was split in half. The authors developed a thicker oxide coating separating the extended gate electrode (beneath the polymer detector) from the silicon. This should reduce its parasitic capacitance and hence improve the S/N. They provided LANL three processed 64 element sensor arrays. Each array was affixed to a connector panel and selected solder pads of the common ground, the common source voltage supply connections, the 64 individual drain connections, and the 64 drain connections (for direct pyroelectric sensing response rather than the MOSFET action) were wire bonded to the connector panel solder pads. This entails (64 + 64 + 1 + 1) = 130 possible bond connections per 64 element array. This report now details the processing steps and the progress of the individual wafers as they were carried through from beginning to end

  2. Surface potential on gold nanodisc arrays fabricated on silicon under light irradiation

    Science.gov (United States)

    Ezaki, Tomotarou; Matsutani, Akihiro; Nishioka, Kunio; Shoji, Dai; Sato, Mina; Okamoto, Takayuki; Isobe, Toshihiro; Nakajima, Akira; Matsushita, Sachiko

    2018-06-01

    This paper proposes Kelvin probe force microscopy (KFM) as a new measurement method of plasmon phenomenon. The surface potential of two arrays, namely, a monomeric array and a tetrameric array, of gold nanodiscs (600 nm diameter) on a silicon substrate fabricated by electron beam lithography was investigated by KFM with the view point of irradiation light wavelength change. In terms of the value of the surface potential, contrasting behaviour, a negative shift in the monomeric disc array and a positive shift in the tetrameric disc array, was observed by light irradiation. This interesting behaviour is thought to be related to a difference in localised plasmons caused by the disc arrangement and was investigated from various viewpoints, including Rayleigh anomalies. Finally, this paper reveals that KFM is powerful not only to investigate the plasmonic behaviour but also to predict the electron transportation.

  3. Characterization of electronic structures from CdS/Si nanoheterostructure array based on silicon nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yong, E-mail: liyong@pdsu.edu.cn [Department of Physics and Solar Energy Research Center, Pingdingshan University, Pingdingshan 467000 (China); Song, Xiao Yan [Department of Mathematics and Information Science, North China University of Water Resources and Electric Power, Zhengzhou 450045 (China); Song, Yue Li; Ji, Peng Fei; Zhou, Feng Qun; Tian, Ming Li; Huang, Hong Chun [Department of Physics and Solar Energy Research Center, Pingdingshan University, Pingdingshan 467000 (China); Li, Xin Jian [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2016-02-15

    Highlights: • CdS/Si nanoheterostructure array has been fabricated through a CBD method. • The electronic properties have been investigated by the I–V and C–V techniques. • The onset voltages, characteristic frequency and built-in potential are investigated. • The electronic structures can be tuned through the annealing treatments. - Abstract: The electronic properties of heterostructures are very important to its applications in the field of optoelectronic devices. Understanding and control of electronic properties are very necessary. CdS/Si nanoheterostructure array have been fabricated through growing CdS nanocrystals on the silicon nanoporous pillar array using a chemical bath deposition method. The electronic properties of CdS nanoheterostructure array have been investigated by the current–voltage, complex impedance spectroscopy and capacitance–voltage techniques. The onset voltages, characteristic frequency and built-in potential are gradually increased with increasing the annealing temperature. It is indicated that the electronic structures of CdS/Si nanoheterostructure array can be tuned through the annealing treatments.

  4. Characterization of electronic structures from CdS/Si nanoheterostructure array based on silicon nanoporous pillar array

    International Nuclear Information System (INIS)

    Li, Yong; Song, Xiao Yan; Song, Yue Li; Ji, Peng Fei; Zhou, Feng Qun; Tian, Ming Li; Huang, Hong Chun; Li, Xin Jian

    2016-01-01

    Highlights: • CdS/Si nanoheterostructure array has been fabricated through a CBD method. • The electronic properties have been investigated by the I–V and C–V techniques. • The onset voltages, characteristic frequency and built-in potential are investigated. • The electronic structures can be tuned through the annealing treatments. - Abstract: The electronic properties of heterostructures are very important to its applications in the field of optoelectronic devices. Understanding and control of electronic properties are very necessary. CdS/Si nanoheterostructure array have been fabricated through growing CdS nanocrystals on the silicon nanoporous pillar array using a chemical bath deposition method. The electronic properties of CdS nanoheterostructure array have been investigated by the current–voltage, complex impedance spectroscopy and capacitance–voltage techniques. The onset voltages, characteristic frequency and built-in potential are gradually increased with increasing the annealing temperature. It is indicated that the electronic structures of CdS/Si nanoheterostructure array can be tuned through the annealing treatments.

  5. Extended Hubbard model for mesoscopic transport in donor arrays in silicon

    Science.gov (United States)

    Le, Nguyen H.; Fisher, Andrew J.; Ginossar, Eran

    2017-12-01

    Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous donors in silicon due to the strong intersite interaction in the system. We also study the resonant tunneling transport in the array at low temperature as a mean of probing the features of the Hubbard physics, such as the Hubbard bands and the Mott gap. Two mechanisms of localization which suppresses transport in the array are investigated: The first arises from the electron-ion core attraction and is significant at low filling; the second is due to the sharp oscillation in the tunnel coupling caused by the intervalley interference of the donor electron's wave function. This disorder in the tunnel coupling leads to a steep exponential decay of conductance with channel length in one-dimensional arrays, but its effect is less prominent in two-dimensional ones. Hence, it is possible to observe resonant tunneling transport in a relatively large array in two dimensions.

  6. Determination of parameters for successful spray coating of silicon microneedle arrays.

    Science.gov (United States)

    McGrath, Marie G; Vrdoljak, Anto; O'Mahony, Conor; Oliveira, Jorge C; Moore, Anne C; Crean, Abina M

    2011-08-30

    Coated microneedle patches have demonstrated potential for effective, minimally invasive, drug and vaccine delivery. To facilitate cost-effective, industrial-scale production of coated microneedle patches, a continuous coating method which utilises conventional pharmaceutical processes is an attractive prospect. Here, the potential of spray-coating silicon microneedle patches using a conventional film-coating process was evaluated and the key process parameters which impact on coating coalescence and weight were identified by employing a fractional factorial design to coat flat silicon patches. Processing parameters analysed included concentration of coating material, liquid input rate, duration of spraying, atomisation air pressure, gun-to-surface distance and air cap setting. Two film-coating materials were investigated; hydroxypropylmethylcellulose (HPMC) and carboxymethylcellulose (CMC). HPMC readily formed a film-coat on silicon when suitable spray coating parameter settings were determined. CMC films required the inclusion of a surfactant (1%, w/w Tween 80) to facilitate coalescence of the sprayed droplets on the silicon surface. Spray coating parameters identified by experimental design, successfully coated 280μm silicon microneedle arrays, producing an intact film-coat, which follows the contours of the microneedle array without occlusion of the microneedle shape. This study demonstrates a novel method of coating microneedle arrays with biocompatible polymers using a conventional film-coating process. It is the first study to indicate the thickness and roughness of coatings applied to microneedle arrays. The study also highlights the importance of identifying suitable processing parameters when film coating substrates of micron dimensions. The ability of a fractional factorial design to identify these critical parameters is also demonstrated. The polymer coatings applied in this study can potentially be drug loaded for intradermal drug and vaccine delivery

  7. Quantitative measurements of C-reactive protein using silicon nanowire arrays

    Directory of Open Access Journals (Sweden)

    Min-Ho Lee

    2008-03-01

    Full Text Available Min-Ho Lee, Kuk-Nyung Lee, Suk-Won Jung, Won-Hyo Kim, Kyu-Sik Shin, Woo-Kyeong SeongKorea Electronics Technology Institute, Gyeonggi, KoreaAbstract: A silicon nanowire-based sensor for biological application showed highly desirable electrical responses to either pH changes or receptor-ligand interactions such as protein disease markers, viruses, and DNA hybridization. Furthermore, because the silicon nanowire can display results in real-time, it may possess superior characteristics for biosensing than those demonstrated in previously studied methods. However, despite its promising potential and advantages, certain process-related limitations of the device, due to its size and material characteristics, need to be addressed. In this article, we suggest possible solutions. We fabricated silicon nanowire using a top-down and low cost micromachining method, and evaluate the sensing of molecules after transfer and surface modifications. Our newly designed method can be used to attach highly ordered nanowires to various substrates, to form a nanowire array device, which needs to follow a series of repetitive steps in conventional fabrication technology based on a vapor-liquid-solid (VLS method. For evaluation, we demonstrated that our newly fabricated silicon nanowire arrays could detect pH changes as well as streptavidin-biotin binding events. As well as the initial proof-of-principle studies, C-reactive protein binding was measured: electrical signals were changed in a linear fashion with the concentration (1 fM to 1 nM in PBS containing 1.37 mM of salts. Finally, to address the effects of Debye length, silicon nanowires coupled with antigen proteins underwent electrical signal changes as the salt concentration changed.Keywords: silicon nanowire array, C-reactive protein, vapor-liquid-solid method

  8. Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

    Science.gov (United States)

    Gehl, M; Trotter, D; Starbuck, A; Pomerene, A; Lentine, A L; DeRose, C

    2017-03-20

    Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.

  9. Energy requirement for the production of silicon solar arrays

    Science.gov (United States)

    Lindmayer, J.; Wihl, M.; Scheinine, A.; Rosenfield, T.; Wrigley, C. Y.; Morrison, A.; Anderson, J.; Clifford, A.; Lafky, W.

    1977-01-01

    The results of a study to investigate the feasibility of manufacturing photovoltaic solar array modules by the use of energy obtained from similar or identical photovoltaic sources are presented. The primary objective of this investigation was the characterization of the energy requirements of current and developing technologies which comprise the photovoltaic field. For cross-checking the energies of prevailing technologies data were also used and the wide-range assessment of alternative technologies included different refinement methods, various ways of producing light sheets, semicrystalline cells, etc. Energy data are utilized to model the behavior of a future solar breeder plant under various operational conditions.

  10. Detection of charged particles through a photodiode: design and analysis

    International Nuclear Information System (INIS)

    Angoli, A.; Quirino, L.L.; Hernandez, V.M.; Lopez del R, H.; Mireles, F.; Davila, J.I.; Rios, C.; Pinedo, J.L.

    2006-01-01

    This project develops and construct an charge particle detector mean a pin photodiode array, design and analysis using a silicon pin Fotodiodo that generally is used to detect visible light, its good efficiency, size compact and reduced cost specifically allows to its use in the radiation monitoring and alpha particle detection. Here, so much, appears the design of the system of detection like its characterization for alpha particles where one is reported as alpha energy resolution and detection efficiency. The equipment used in the development of work consists of alpha particle a triple source composed of Am-241, Pu-239 and Cm-244 with 5,55 KBq as total activity, Maestro 32 software made by ORTEC, a multi-channel card Triumph from ORTEC and one low activity electroplated uranium sample. (Author)

  11. Corporate array of micromachined dipoles on silicon wafer for 60 GHz communication systems

    KAUST Repository

    Sallam, M. O.

    2013-03-01

    In this paper, an antenna array operating at 60 GHz and realized on 0.675 mm thick silicon substrate is presented. The array is constructed using four micromachined half-wavelength dipoles fed by a corporate feeding network. Isolation between the antenna array and its feeding network is achieved via a ground plane. This arrangement leads to maximizing the broadside radiation with relatively high front-to-back ratio. Simulations have been carried out using both HFSS and CST, which showed very good agreement. Results reveal that the proposed antenna array has good radiation characteristics, where the directivity, gain, and radiation efficiency are around 10.5 dBi, 9.5 dBi, and 79%, respectively. © 2013 IEEE.

  12. Synthesis, structure and photoelectrochemical properties of single crystalline silicon nanowire arrays

    International Nuclear Information System (INIS)

    Dalchiele, E.A.; Martin, F.; Leinen, D.; Marotti, R.E.; Ramos-Barrado, J.R.

    2010-01-01

    In the present work, n-type silicon nanowire (n-SiNW) arrays have been synthesized by self-assembly electroless metal deposition (EMD) nanoelectrochemistry. The synthesized n-SiNW arrays have been submitted to scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and optical studies. Initial probes of the solar device conversion properties and the photovoltaic parameters such as short-circuit current, open-circuit potential, and fill factor of the n-SiNW arrays have been explored using a liquid-junction in a photoelectrochemical (PEC) system under white light. Moreover, a direct comparison between the PEC performance of a polished n-Si(100) and the synthesized n-SiNW array photoelectrodes has been done. The PEC performance was significantly enhanced on the n-SiNWs photoelectrodes compared with that on polished n-Si(100).

  13. High density micro-pyramids with silicon nanowire array for photovoltaic applications

    International Nuclear Information System (INIS)

    Rahman, Tasmiat; Navarro-Cía, Miguel; Fobelets, Kristel

    2014-01-01

    We use a metal assisted chemical etch process to fabricate silicon nanowire arrays (SiNWAs) onto a dense periodic array of pyramids that are formed using an alkaline etch masked with an oxide layer. The hybrid micro-nano structure acts as an anti-reflective coating with experimental reflectivity below 1% over the visible and near-infrared spectral regions. This represents an improvement of up to 11 and 14 times compared to the pyramid array and SiNWAs on bulk, respectively. In addition to the experimental work, we optically simulate the hybrid structure using a commercial finite difference time domain package. The results of the optical simulations support our experimental work, illustrating a reduced reflectivity in the hybrid structure. The nanowire array increases the absorbed carrier density within the pyramid by providing a guided transition of the refractive index along the light path from air into the silicon. Furthermore, electrical simulations which take into account surface and Auger recombination show an efficiency increase for the hybrid structure of 56% over bulk, 11% over pyramid array and 8.5% over SiNWAs. (paper)

  14. Actinide oxide photodiode and nuclear battery

    Energy Technology Data Exchange (ETDEWEB)

    Sykora, Milan; Usov, Igor

    2017-12-05

    Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxides are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.

  15. Application of neural networks to digital pulse shape analysis for an array of silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Flores, J.L. [Dpto de Ingeniería Eléctrica y Térmica, Universidad de Huelva (Spain); Martel, I. [Dpto de Física Aplicada, Universidad de Huelva (Spain); CERN, ISOLDE, CH 1211 Geneva, 23 (Switzerland); Jiménez, R. [Dpto de Ingeniería Electrónica, Sist. Informáticos y Automática, Universidad de Huelva (Spain); Galán, J., E-mail: jgalan@diesia.uhu.es [Dpto de Ingeniería Electrónica, Sist. Informáticos y Automática, Universidad de Huelva (Spain); Salmerón, P. [Dpto de Ingeniería Eléctrica y Térmica, Universidad de Huelva (Spain)

    2016-09-11

    The new generation of nuclear physics detectors that used to study nuclear reactions is considering the use of digital pulse shape analysis techniques (DPSA) to obtain the (A,Z) values of the reaction products impinging in solid state detectors. This technique can be an important tool for selecting the relevant reaction channels at the HYDE (HYbrid DEtector ball array) silicon array foreseen for the Low Energy Branch of the FAIR facility (Darmstadt, Germany). In this work we study the feasibility of using artificial neural networks (ANNs) for particle identification with silicon detectors. Multilayer Perceptron networks were trained and tested with recent experimental data, showing excellent identification capabilities with signals of several isotopes ranging from {sup 12}C up to {sup 84}Kr, yielding higher discrimination rates than any other previously reported.

  16. Large-area 2D periodic crystalline silicon nanodome arrays on nanoimprinted glass exhibiting photonic band structure effects

    International Nuclear Information System (INIS)

    Becker, C; Lockau, D; Sontheimer, T; Rech, B; Schubert-Bischoff, P; Rudigier-Voigt, E; Bockmeyer, M; Schmidt, F

    2012-01-01

    Two-dimensional silicon nanodome arrays are prepared on large areas up to 50 cm 2 exhibiting photonic band structure effects in the near-infrared and visible wavelength region by downscaling a recently developed fabrication method based on nanoimprint-patterned glass, high-rate electron-beam evaporation of silicon, self-organized solid phase crystallization and wet-chemical etching. The silicon nanodomes, arranged in square lattice geometry with 300 nm lattice constant, are optically characterized by angular resolved reflection measurements, allowing the partial determination of the photonic band structure. This experimentally determined band structure agrees well with the outcome of three-dimensional optical finite-element simulations. A 16% photonic bandgap is predicted for an optimized geometry of the silicon nanodome arrays. By variation of the duration of the selective etching step, the geometry as well as the optical properties of the periodic silicon nanodome arrays can be controlled systematically. (paper)

  17. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    KAUST Repository

    Frost, Thomas; Jahangir, Shafat; Stark, Ethan; Deshpande, Saniya; Hazari, Arnab Shashi; Zhao, Chao; Ooi, Boon S.; Bhattacharya, Pallab K.

    2014-01-01

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  18. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    KAUST Repository

    Frost, Thomas

    2014-08-13

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  19. Periodic arrays of deep nanopores made in silicon with reactive ion etching and deep UV lithography

    International Nuclear Information System (INIS)

    Woldering, Leon A; Tjerkstra, R Willem; Vos, Willem L; Jansen, Henri V; Setija, Irwan D

    2008-01-01

    We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF 6 , optimized for the formation of deep nanopores. We have realized structures with pitches between 440 and 750 nm, pore diameters between 310 and 515 nm, and depth to diameter aspect ratios up to 16. To the best of our knowledge, this is the highest aspect ratio ever reported for arrays of nanopores in silicon made with a reactive ion etching process. Our experimental results show that the etching rate of the nanopores is aspect-ratio-dependent, and is mostly influenced by the angular distribution of the etching ions. Furthermore we show both experimentally and theoretically that, for sub-micrometer structures, reducing the sidewall erosion is the best way to maximize the aspect ratio of the pores. Our structures have potential applications in chemical sensors, in the control of liquid wetting of surfaces, and as capacitors in high-frequency electronics. We demonstrate by means of optical reflectivity that our high-quality structures are very well suited as photonic crystals. Since the process studied is compatible with existing CMOS semiconductor fabrication, it allows for the incorporation of the etched arrays in silicon chips

  20. Conception and modelling of photo-detection pixels. PIN photodiodes conceived in amorphous silicon for particles detection; Conception et modelisation de pixels de photodetection: Photodiodes PIN en silicium amorphe en vue de leurs utilisations comme detecteurs de particules

    Energy Technology Data Exchange (ETDEWEB)

    Negru, R

    2008-06-15

    The research done has revealed that the a-Si:H is a material ideally suited for the detection of particles, while being resistant to radiation. It also has a low manufacturing cost, is compatible with existing technology and can be deposited over large areas. Thus, despite the low local mobility of charges (30 cm{sup 2}/V/s), a-Si:H is a material of particular interest for manufacturing high-energy particle detection pixels. As a consequence of this, we have studied the feasibility of an experimental pixel stacked structure based on a-Si:H as a basic sensor element for an electromagnetic calorimeter. The structure of such a pixel consists of different components. First, a silicon PIN diode in a-Si:H is fabricated, followed by a bias resistor and a decoupling capacitor. Before such a structure is made and in order to optimize its design, it is essential to have an efficient behavioural model of the various components. Thus, our primary goal was to develop a two-dimensional physical model of the PIN diode using the SILVACO finite element calculation software. This a-Si:H PIN diode two-dimensional physical model allowed us to study the problem of crosstalk between pixels in a matrix structure of detectors. In particular, we concentrated on the leakage current and the current generated in the volume between neighbouring pixels. The successful implementation of this model in SPICE ensures its usefulness in other professional simulators and especially its integration into a complete electronic structure (PIN diode, bias resistor, decoupling capacity and low noise amplifier). Thanks to these modelling tools, we were able to simulate PIN diode structures in a-Si:H with different thicknesses and different dimensions. These simulations have allowed us to predict that the thicker structures are relevant to the design of the pixel detectors for high energy physics. Applications in astronomy, medical imaging and the analysis of the failure of silicon integrated circuits, can

  1. Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    R. W. Wu

    2016-02-01

    Full Text Available Silicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE. A bilayer metal configuration (Metal 1 / Metal 2 was applied to assist etching of Si where metal 1 acts as direct catalyst and metal 2 provides mechanical support. Different metal types were investigated to figure out the influence of metal catalyst on morphology of etched silicon. We find that silicon microwires with vertical side wall are produced when we use Ag/Au bilayer, while cone–like and porous microwires formed when Pt/Au is applied. The different micro-/nano-structures in as-etched silicon are demonstrated to be due to the discrepancy of work function of metal catalyst relative to Si. Further, we constructed a silicon microwire arrays solar cells in a radial p–n junction configurations in a screen printed aluminum paste p–doping process.

  2. Performance test of Si PIN photodiode line scanner for thermal neutron detection

    Energy Technology Data Exchange (ETDEWEB)

    Totsuka, Daisuke, E-mail: totsuka@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Nihon Kessho Kogaku Co., Ltd., 810-5 Nobe-cho Tatebayashi, Gunma 374-0047 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Fukuda, Kentaro; Kawaguchi, Noriaki [Tokuyama Corp., 3 Shibuya Shibuya-ku, Tokyo 150-8383 (Japan); Fujimoto, Yutaka [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Pejchal, Jan [Institute of Physics AS CR, Cukrovarnicka 10, Prague 6, 162-53 (Czech Republic); Yokota, Yuui [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

    2011-12-11

    Thermal neutron imaging using Si PIN photodiode line scanner and Eu-doped LiCaAlF{sub 6} crystal scintillator has been developed. The pixel dimensions of photodiode are 1.18 mm (width) Multiplication-Sign 3.8 mm (length) with 0.4 mm gap and the module has 192 channels in linear array. The emission peaks of Eu-doped LiCaAlF{sub 6} after thermal neutron excitation are placed at 370 and 590 nm, and the corresponding photon sensitivities of photodiode are 0.04 and 0.34 A/W, respectively. Polished scintillator blocks with a size of 1.18 mm (width) Multiplication-Sign 3.8 mm (length) Multiplication-Sign 5.0 mm (thickness) were wrapped by several layers of Teflon tapes as a reflector and optically coupled to the photodiodes by silicone grease. JRR-3 MUSASI beam line emitting 13.5 meV thermal neutrons with the flux of 8 Multiplication-Sign 10{sup 5} n/cm{sup 2} s was used for the imaging test. As a subject for imaging, a Cd plate was moved at the speed of 50 mm/s perpendicular to the thermal neutron beam. Analog integration time was set to be 416.6 {mu}s, then signals were converted by a delta-sigma A/D converter. After the image processing, we successfully obtained moving Cd plate image under thermal neutron irradiation using PIN photodiode line scanner coupled with Eu-doped LiCaAlF{sub 6} scintillator.

  3. Performance test of Si PIN photodiode line scanner for thermal neutron detection

    International Nuclear Information System (INIS)

    Totsuka, Daisuke; Yanagida, Takayuki; Fukuda, Kentaro; Kawaguchi, Noriaki; Fujimoto, Yutaka; Pejchal, Jan; Yokota, Yuui; Yoshikawa, Akira

    2011-01-01

    Thermal neutron imaging using Si PIN photodiode line scanner and Eu-doped LiCaAlF 6 crystal scintillator has been developed. The pixel dimensions of photodiode are 1.18 mm (width)×3.8 mm (length) with 0.4 mm gap and the module has 192 channels in linear array. The emission peaks of Eu-doped LiCaAlF 6 after thermal neutron excitation are placed at 370 and 590 nm, and the corresponding photon sensitivities of photodiode are 0.04 and 0.34 A/W, respectively. Polished scintillator blocks with a size of 1.18 mm (width)×3.8 mm (length)×5.0 mm (thickness) were wrapped by several layers of Teflon tapes as a reflector and optically coupled to the photodiodes by silicone grease. JRR-3 MUSASI beam line emitting 13.5 meV thermal neutrons with the flux of 8×10 5 n/cm 2 s was used for the imaging test. As a subject for imaging, a Cd plate was moved at the speed of 50 mm/s perpendicular to the thermal neutron beam. Analog integration time was set to be 416.6 μs, then signals were converted by a delta-sigma A/D converter. After the image processing, we successfully obtained moving Cd plate image under thermal neutron irradiation using PIN photodiode line scanner coupled with Eu-doped LiCaAlF 6 scintillator.

  4. Laser desorption/ionization from nanostructured surfaces: nanowires, nanoparticle films and silicon microcolumn arrays

    International Nuclear Information System (INIS)

    Chen Yong; Luo Guanghong; Diao Jiajie; Chornoguz, Olesya; Reeves, Mark; Vertes, Akos

    2007-01-01

    Due to their optical properties and morphology, thin films formed of nanoparticles are potentially new platforms for soft laser desorption/ionization (SLDI) mass spectrometry. Thin films of gold nanoparticles (with 12±1 nm particle size) were prepared by evaporation-driven vertical colloidal deposition and used to analyze a series of directly deposited polypeptide samples. In this new SLDI method, the required laser fluence for ion detection was equal or less than what was needed for matrix-assisted laser desorption/ionization (MALDI) but the resulting spectra were free of matrix interferences. A silicon microcolumn array-based substrate (a.k.a. black silicon) was developed as a new matrix-free laser desorption ionization surface. When low-resistivity silicon wafers were processed with a 22 ps pulse length 3xω Nd:YAG laser in air, SF 6 or water environment, regularly arranged conical spikes emerged. The radii of the spike tips varied with the processing environment, ranging from approximately 500 nm in water, to ∼2 μm in SF 6 gas and to ∼5 μm in air. Peptide mass spectra directly induced by a nitrogen laser showed the formation of protonated ions of angiotensin I and II, substance P, bradykinin fragment 1-7, synthetic peptide, pro14-arg, and insulin from the processed silicon surfaces but not from the unprocessed areas. Threshold fluences for desorption/ionization were similar to those used in MALDI. Although compared to silicon nanowires the threshold laser pulse energy for ionization is significantly (∼10x) higher, the ease of production and robustness of microcolumn arrays offer complementary benefits

  5. Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

    Science.gov (United States)

    Cho, Heesook; Yoo, Hana; Park, Soojin

    2010-05-18

    Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

  6. Dual-side and three-dimensional microelectrode arrays fabricated from ultra-thin silicon substrates

    International Nuclear Information System (INIS)

    Du, Jiangang; Masmanidis, Sotiris C; Roukes, Michael L

    2009-01-01

    A method for fabricating planar implantable microelectrode arrays was demonstrated using a process that relied on ultra-thin silicon substrates, which ranged in thickness from 25 to 50 µm. The challenge of handling these fragile materials was met via a temporary substrate support mechanism. In order to compensate for putative electrical shielding of extracellular neuronal fields, separately addressable electrode arrays were defined on each side of the silicon device. Deep reactive ion etching was employed to create sharp implantable shafts with lengths of up to 5 mm. The devices were flip-chip bonded onto printed circuit boards (PCBs) by means of an anisotropic conductive adhesive film. This scalable assembly technique enabled three-dimensional (3D) integration through formation of stacks of multiple silicon and PCB layers. Simulations and measurements of microelectrode noise appear to suggest that low impedance surfaces, which could be formed by electrodeposition of gold or other materials, are required to ensure an optimal signal-to-noise ratio as well a low level of interchannel crosstalk

  7. Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture.

    Science.gov (United States)

    Shen, Xiaojuan; Sun, Baoquan; Liu, Dong; Lee, Shuit-Tong

    2011-12-07

    Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell. © 2011 American Chemical Society

  8. Simple fabrication of closed-packed IR microlens arrays on silicon by femtosecond laser wet etching

    Science.gov (United States)

    Meng, Xiangwei; Chen, Feng; Yang, Qing; Bian, Hao; Du, Guangqing; Hou, Xun

    2015-10-01

    We demonstrate a simple route to fabricate closed-packed infrared (IR) silicon microlens arrays (MLAs) based on femtosecond laser irradiation assisted by wet etching method. The fabricated MLAs show high fill factor, smooth surface and good uniformity. They can be used as optical devices for IR applications. The exposure and etching parameters are optimized to obtain reproducible microlens with hexagonal and rectangular arrangements. The surface roughness of the concave MLAs is only 56 nm. This presented method is a maskless process and can flexibly change the size, shape and the fill factor of the MLAs by controlling the experimental parameters. The concave MLAs on silicon can work in IR region and can be used for IR sensors and imaging applications.

  9. Efficient light trapping in silicon inclined nanohole arrays for photovoltaic applications

    Science.gov (United States)

    Deng, Can; Tan, Xinyu; Jiang, Lihua; Tu, Yiteng; Ye, Mao; Yi, Yasha

    2018-01-01

    Structural design with high light absorption is the key challenge for thin film solar cells because of its poor absorption. In this paper, the light-trapping performance of silicon inclined nanohole arrays is systematically studied. The finite difference time domain method is used to calculate the optical absorption of different inclination angles in different periods and diameters. The results indicate that the inclined nanoholes with inclination angles between 5° and 45° demonstrate greater light-trapping ability than their counterparts of the vertical nanoholes, and they also show that by choosing the optimal parameters for the inclined nanoholes, a 31.2 mA/cm2 short circuit photocurrent density could be achieved, which is 10.25% higher than the best vertical nanohole system and 105.26% higher than bare silicon with a thickness of 2330 nm. The design principle proposed in this work gives a guideline for choosing reasonable parameters in the application of solar cells.

  10. Ultracompact high-efficiency polarising beam splitter based on silicon nanobrick arrays.

    Science.gov (United States)

    Zheng, Guoxing; Liu, Guogen; Kenney, Mitchell Guy; Li, Zile; He, Ping'an; Li, Song; Ren, Zhi; Deng, Qiling

    2016-03-21

    Since the transmission of anisotropic nano-structures is sensitive to the polarisation of an incident beam, a novel polarising beam splitter (PBS) based on silicon nanobrick arrays is proposed. With careful design of such structures, an incident beam with polarisation direction aligned with the long axis of the nanobrick is almost totally reflected (~98.5%), whilst that along the short axis is nearly totally transmitted (~94.3%). More importantly, by simply changing the width of the nanobrick we can shift the peak response wavelength from 1460 nm to 1625 nm, covering S, C and L bands of the fiber telecommunications windows. The silicon nanobrick-based PBS can find applications in many fields which require ultracompactness, high efficiency, and compatibility with semiconductor industry technologies.

  11. A polychromator-type near-infrared spectrometer with a high-sensitivity and high-resolution photodiode array detector for pharmaceutical process monitoring on the millisecond time scale.

    Science.gov (United States)

    Murayama, Kodai; Genkawa, Takuma; Ishikawa, Daitaro; Komiyama, Makoto; Ozaki, Yukihiro

    2013-02-01

    In the fine chemicals industry, particularly in the pharmaceutical industry, advanced sensing technologies have recently begun being incorporated into the process line in order to improve safety and quality in accordance with process analytical technology. For estimating the quality of powders without preparation during drug formulation, near-infrared (NIR) spectroscopy has been considered the most promising sensing approach. In this study, we have developed a compact polychromator-type NIR spectrometer equipped with a photodiode (PD) array detector. This detector is consisting of 640 InGaAs-PD elements with 20-μm pitch. Some high-specification spectrometers, which use InGaAs-PD with 512 elements, have a wavelength resolution of about 1.56 nm when covering 900-1700 nm range. On the other hand, the newly developed detector, having the PD with one of the world's highest density, enables wavelength resolution of below 1.25 nm. Moreover, thanks to the combination with a highly integrated charge amplifier array circuit, measurement speed of the detector is higher by two orders than that of existing PD array detectors. The developed spectrometer is small (120 mm × 220 mm × 200 mm) and light (6 kg), and it contains various key devices including the high-density and high-sensitivity PD array detector, NIR technology, and spectroscopy technology for a spectroscopic analyzer that has the required detection mechanism and high sensitivity for powder measurement, as well as a high-speed measuring function for blenders. Moreover, we have evaluated the characteristics of the developed NIR spectrometer, and the measurement of powder samples confirmed that it has high functionality.

  12. A polychromator-type near-infrared spectrometer with a high-sensitivity and high-resolution photodiode array detector for pharmaceutical process monitoring on the millisecond time scale

    Science.gov (United States)

    Murayama, Kodai; Genkawa, Takuma; Ishikawa, Daitaro; Komiyama, Makoto; Ozaki, Yukihiro

    2013-02-01

    In the fine chemicals industry, particularly in the pharmaceutical industry, advanced sensing technologies have recently begun being incorporated into the process line in order to improve safety and quality in accordance with process analytical technology. For estimating the quality of powders without preparation during drug formulation, near-infrared (NIR) spectroscopy has been considered the most promising sensing approach. In this study, we have developed a compact polychromator-type NIR spectrometer equipped with a photodiode (PD) array detector. This detector is consisting of 640 InGaAs-PD elements with 20-μm pitch. Some high-specification spectrometers, which use InGaAs-PD with 512 elements, have a wavelength resolution of about 1.56 nm when covering 900-1700 nm range. On the other hand, the newly developed detector, having the PD with one of the world's highest density, enables wavelength resolution of below 1.25 nm. Moreover, thanks to the combination with a highly integrated charge amplifier array circuit, measurement speed of the detector is higher by two orders than that of existing PD array detectors. The developed spectrometer is small (120 mm × 220 mm × 200 mm) and light (6 kg), and it contains various key devices including the high-density and high-sensitivity PD array detector, NIR technology, and spectroscopy technology for a spectroscopic analyzer that has the required detection mechanism and high sensitivity for powder measurement, as well as a high-speed measuring function for blenders. Moreover, we have evaluated the characteristics of the developed NIR spectrometer, and the measurement of powder samples confirmed that it has high functionality.

  13. N-Type delta Doping of High-Purity Silicon Imaging Arrays

    Science.gov (United States)

    Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

    2005-01-01

    A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

  14. Magnetic structure of cross-shaped permalloy arrays embedded in silicon wafers

    International Nuclear Information System (INIS)

    Machida, Kenji; Tezuka, Tomoyuki; Yamamoto, Takahiro; Ishibashi, Takayuki; Morishita, Yoshitaka; Koukitu, Akinori; Sato, Katsuaki

    2005-01-01

    This paper describes the observed magnetic structure and the micromagnetic simulation of cross-shaped, permalloy (Ni 80 Fe 20 ) arrays embedded in silicon wafers. The nano-scale-width, cross-shaped patterns were fabricated using the damascene technique, electron beam lithography, and chemical mechanical polishing. The magnetic poles were observed as two pairs of bright and dark spots at the ends of the crossed-bars using a magnetic force microscope. The force gradient distributions were simulated based on micromagnetic calculations and tip's stray field calculations using the integral equation method. This process of calculation successfully explains the appearance of the poles and complicated spin structure at the crossing region

  15. Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

    Energy Technology Data Exchange (ETDEWEB)

    Clément, N., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr; Han, X. L. [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincaré, 59652 Villeneuve d' Ascq (France); Larrieu, G., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr [Laboratory for Analysis and Architecture of Systems (LAAS), CNRS, Universite de Toulouse, 7 Avenue Colonel Roche, 31077 Toulouse (France)

    2013-12-23

    Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial layers. Although contact noise can already be a source of poor transistor operation above threshold voltage for few nanowires, nanowire parallelization drastically reduces its impact.

  16. Scanning tunnelling microscope fabrication of phosphorus array in silicon for a nuclear spin quantum computer

    International Nuclear Information System (INIS)

    O'Brien, J.L.; Schofield, S.R.; Simmons, M.Y.; Clark, R.G.; Dzurak, A.S.; Prawer, S.; Adrienko, I.; Cimino, A.

    2000-01-01

    Full text: In the vigorous worldwide effort to experimentally build a quantum computer, recent intense interest has focussed on solid state approaches for their promise of scalability. Particular attention has been given to silicon-based proposals that can readily be integrated into conventional computing technology. For example the Kane design uses the well isolated nuclear spin of phosphorous donor nuclei (I=1/2) as the qubits embedded in isotopically pure 28 Si (I=0). We demonstrate the ability to fabricate a precise array of P atoms on a clean Si surface with atomic-scale resolution compatible with the fabrication of the Kane quantum computer

  17. Performance studies of X3 silicon detectors for the future ELISSA array at ELI-NP

    Science.gov (United States)

    Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; State, A.

    2018-05-01

    ELISSA is an array of silicon strip detectors under construction at the ELI-NP facility for measurements of photodissociation reactions using high-brilliance, quasi monoenergetic gamma beams. The detection system consists of 35 single-sided position-sensitive X3 detectors arranged in a cylindrical configuration and eight QQQ3 detectors as end-caps. A batch of forty X3 detectors have been tested at ELI-NP. The energy and position resolution, ballistic deficit, leakage currents, and depletion voltage were measured and analyzed. Measurements of the energy resolution were carried out using two read-out electronic chains, one based on multichannel preamplifiers and another based on multiplexers.

  18. The Study of Al0.29Ga0.71N-BASED Schottky Photodiodes Grown on Silicon by Plasma-Assisted Molecular Beam Epitaxy

    Science.gov (United States)

    Mohd Yusoff, M. Z.; Hassan, Z.; Chin, C. W.; Hassan, H. Abu; Abdullah, M. J.; Mohammad, N. N.; Ahmad, M. A.; Yusof, Y.

    2013-05-01

    In this paper, the growth and characterization of epitaxial Al0.29Ga0.71N grown on Si(111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. PL spectrum of sample has shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing that it is comparable in crystal quality of the sample when compared with previous reports. From the Raman measurement of as-grown Al0.29Ga0.71N layer on GaN/AlN/Si sample. We found that the dominant E2 (high) phonon mode of GaN appears at 572.7 cm-1. The E2 (high) mode of AlN appears at 656.7 cm-1 and deviates from the standard value of 655 cm-1 for unstrained AlN. Finally, AlGaN Schottky photodiode have been fabricated and analyzed by mean of electrical characterization, using current-voltage (I-V) measurement to evaluate the performance of this device.

  19. The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

    Science.gov (United States)

    Yoo, Hana; Park, Soojin

    2010-06-01

    We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm × 5 cm.

  20. The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hana; Park, Soojin, E-mail: spark@unist.ac.kr [Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology, Banyeon-ri 100, Ulsan 689-798 (Korea, Republic of)

    2010-06-18

    We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm x 5 cm.

  1. Nanopore arrays in a silicon membrane for parallel single-molecule detection: fabrication

    Science.gov (United States)

    Schmidt, Torsten; Zhang, Miao; Sychugov, Ilya; Roxhed, Niclas; Linnros, Jan

    2015-08-01

    Solid state nanopores enable translocation and detection of single bio-molecules such as DNA in buffer solutions. Here, sub-10 nm nanopore arrays in silicon membranes were fabricated by using electron-beam lithography to define etch pits and by using a subsequent electrochemical etching step. This approach effectively decouples positioning of the pores and the control of their size, where the pore size essentially results from the anodizing current and time in the etching cell. Nanopores with diameters as small as 7 nm, fully penetrating 300 nm thick membranes, were obtained. The presented fabrication scheme to form large arrays of nanopores is attractive for parallel bio-molecule sensing and DNA sequencing using optical techniques. In particular the signal-to-noise ratio is improved compared to other alternatives such as nitride membranes suffering from a high-luminescence background.

  2. Optical absorption enhancement in silicon nanowire arrays with a large lattice constant for photovoltaic applications.

    Science.gov (United States)

    Lin, Chenxi; Povinelli, Michelle L

    2009-10-26

    In this paper, we use the transfer matrix method to calculate the optical absorptance of vertically-aligned silicon nanowire (SiNW) arrays. For fixed filling ratio, significant optical absorption enhancement occurs when the lattice constant is increased from 100 nm to 600 nm. The enhancement arises from an increase in field concentration within the nanowire as well as excitation of guided resonance modes. We quantify the absorption enhancement in terms of ultimate efficiency. Results show that an optimized SiNW array with lattice constant of 600 nm and wire diameter of 540 nm has a 72.4% higher ultimate efficiency than a Si thin film of equal thickness. The enhancement effect can be maintained over a large range of incidence angles.

  3. Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

    Science.gov (United States)

    Nishi, Hidetaka; Tsuchizawa, Tai; Kou, Rai; Shinojima, Hiroyuki; Yamada, Takashi; Kimura, Hideaki; Ishikawa, Yasuhiko; Wada, Kazumi; Yamada, Koji

    2012-04-09

    On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

  4. Preparing magnetic yttrium iron garnet nanodot arrays by ultrathin anodic alumina template on silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Hui; Han, Mangui, E-mail: han-mangui@yahoo.com; Deng, Longjiang [National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, Liang; Zheng, Peng; Qin, Huibin [Institute of Electron Device and Application, Hangzhou Dianzi University, Hangzhou 310008 (China); Wu, Qiong [Magnetism Key Laboratory of Zhejiang Province, China Jiliang University, Hangzhou 310018 (China)

    2015-08-10

    Ultrahigh density periodically ordered magnetic yttrium iron garnet (Y{sub 3}Fe{sub 5}O{sub 12}, YIG) nanodot arrays have been prepared by pulsed laser deposition through an ultrathin alumina mask (UTAM). UTAM having periodically ordered circularly shaped holes with 350 nm in diameter, 450 nm in inter-pore distance, and 700 nm in height has been prepared on silicon substrate. Furthermore, the microstructure and magnetic properties of YIG nanodot arrays have been characterized. Nanodot arrays with a sharp distribution in diameter centered at 340 nm with standard deviation of 10 nm have been fabricated. Moreover, typical hysteresis loops and ferromagnetic resonance spectra in in-plane and out-of-plane revealed that this unique structure greatly influences the magnetics properties of YIG. First, coercivity of YIG nanodot arrays in in-plane was increased about from 15 Oe of YIG films to 500 Oe. Then, the degree of uniformity about nanodot height decided that two or more resonance peaks in out-of-plane were detected in the spectra. The peak-to-peak linewidth values were about 94 Oe and 40 Oe in the parallel and perpendicular directions, respectively, which indicated that the values were larger by the two-magnon scattering. Consequently, this pattering method creates opportunities for studying physics in oxide nanomagnets and may be applied in spin-wave devices.

  5. Evaluation of Matrix9 silicon photomultiplier array for small-animal PET

    Science.gov (United States)

    Du, Junwei; Schmall, Jeffrey P.; Yang, Yongfeng; Di, Kun; Roncali, Emilie; Mitchell, Gregory S.; Buckley, Steve; Jackson, Carl; Cherry, Simon R.

    2015-01-01

    Purpose: The MatrixSL-9-30035-OEM (Matrix9) from SensL is a large-area silicon photomultiplier (SiPM) photodetector module consisting of a 3 × 3 array of 4 × 4 element SiPM arrays (total of 144 SiPM pixels) and incorporates SensL’s front-end electronics board and coincidence board. Each SiPM pixel measures 3.16 × 3.16 mm2 and the total size of the detector head is 47.8 × 46.3 mm2. Using 8 × 8 polished LSO/LYSO arrays (pitch 1.5 mm) the performance of this detector system (SiPM array and readout electronics) was evaluated with a view for its eventual use in small-animal positron emission tomography (PET). Methods: Measurements of noise, signal, signal-to-noise ratio, energy resolution, flood histogram quality, timing resolution, and array trigger error were obtained at different bias voltages (28.0–32.5 V in 0.5 V intervals) and at different temperatures (5 °C–25 °C in 5 °C degree steps) to find the optimal operating conditions. Results: The best measured signal-to-noise ratio and flood histogram quality for 511 keV gamma photons were obtained at a bias voltage of 30.0 V and a temperature of 5 °C. The energy resolution and timing resolution under these conditions were 14.2% ± 0.1% and 4.2 ± 0.1 ns, respectively. The flood histograms show that all the crystals in the 1.5 mm pitch LSO array can be clearly identified and that smaller crystal pitches can also be resolved. Flood histogram quality was also calculated using different center of gravity based positioning algorithms. Improved and more robust results were achieved using the local 9 pixels for positioning along with an energy offset calibration. To evaluate the front-end detector readout, and multiplexing efficiency, an array trigger error metric is introduced and measured at different lower energy thresholds. Using a lower energy threshold greater than 150 keV effectively eliminates any mispositioning between SiPM arrays. Conclusions: In summary, the Matrix9 detector system can resolve

  6. Evaluation of Matrix9 silicon photomultiplier array for small-animal PET

    International Nuclear Information System (INIS)

    Du, Junwei; Schmall, Jeffrey P.; Yang, Yongfeng; Di, Kun; Roncali, Emilie; Mitchell, Gregory S.; Buckley, Steve; Jackson, Carl; Cherry, Simon R.

    2015-01-01

    Purpose: The MatrixSL-9-30035-OEM (Matrix9) from SensL is a large-area silicon photomultiplier (SiPM) photodetector module consisting of a 3 × 3 array of 4 × 4 element SiPM arrays (total of 144 SiPM pixels) and incorporates SensL’s front-end electronics board and coincidence board. Each SiPM pixel measures 3.16 × 3.16 mm 2 and the total size of the detector head is 47.8 × 46.3 mm 2 . Using 8 × 8 polished LSO/LYSO arrays (pitch 1.5 mm) the performance of this detector system (SiPM array and readout electronics) was evaluated with a view for its eventual use in small-animal positron emission tomography (PET). Methods: Measurements of noise, signal, signal-to-noise ratio, energy resolution, flood histogram quality, timing resolution, and array trigger error were obtained at different bias voltages (28.0–32.5 V in 0.5 V intervals) and at different temperatures (5 °C–25 °C in 5 °C degree steps) to find the optimal operating conditions. Results: The best measured signal-to-noise ratio and flood histogram quality for 511 keV gamma photons were obtained at a bias voltage of 30.0 V and a temperature of 5 °C. The energy resolution and timing resolution under these conditions were 14.2% ± 0.1% and 4.2 ± 0.1 ns, respectively. The flood histograms show that all the crystals in the 1.5 mm pitch LSO array can be clearly identified and that smaller crystal pitches can also be resolved. Flood histogram quality was also calculated using different center of gravity based positioning algorithms. Improved and more robust results were achieved using the local 9 pixels for positioning along with an energy offset calibration. To evaluate the front-end detector readout, and multiplexing efficiency, an array trigger error metric is introduced and measured at different lower energy thresholds. Using a lower energy threshold greater than 150 keV effectively eliminates any mispositioning between SiPM arrays. Conclusions: In summary, the Matrix9 detector system can

  7. Morphology dependent field emission characteristics of ZnS/silicon nanoporous pillar array

    Science.gov (United States)

    Wang, Ling Li; Zhao, Cheng Zhou; Kang, Li Ping; Liu, De Wei; Zhao, Hui Chun; Hao, Shan Peng; Zhang, Yuan Kai; Chen, Zhen Ping; Li, Xin Jian

    2016-10-01

    Through depositing zinc sulphide (ZnS) nanoparticals on silicon nanoporous pillar array (Si-NPA) and crater-shaped silicon nanoporous pillar array (c-Si-NPA) by chemical bath deposition (CBD) method, ZnS/Si-NPA and c-ZnS/Si-NPA were prepared and the field emission (FE) properties of them were investigated. The turn-on electric fields of were 3.8 V/mm for ZnS/Si-NPA and 5.0 V/mm for c-ZnS/Si-NPA, respectively. The lower turn-on electric fields of ZnS/Si-NPA than that of c-ZnS/Si-NPA were attributed to the different electric distribution of the field emitters causing by the different surface morphology of the two samples, which was further demonstrated via the simulated results by finite element modeling. The FN curves for the ZnS/Si-NPA showed two-slope behavior. All the results indicate that the morphology play an important role in the FE properties and designing an appropriate top morphology for the emitter is a very efficient way to improve the FE performance.

  8. Directing polyallylamine adsorption on microlens array patterned silicon for microarray fabrication.

    Science.gov (United States)

    Saini, Gaurav; Gates, Richard; Asplund, Matthew C; Blair, Steve; Attavar, Sachin; Linford, Matthew R

    2009-06-21

    The selective adsorption of reagents is often essential for bioarray and lab-on-a-chip type devices. As the starting point for a bioarray, alkyl monolayer terminated silicon shards were photopatterned in a few nanoseconds with thousands of wells (spots) using an optical element, a microlens array. Polyallylamine (PAAm), a primary amine containing polymer, adsorbed with little selectivity to the spots, i.e., silicon oxide, over the hydrophobic background. However, at appropriate concentrations, addition of a cationic surfactant to the PAAm deposition solution, cetyltrimethylammonium chloride, prevented the nonspecific adsorption of PAAm onto the hydrophobic monolayer, while directing it effectively to the active spots on the device. A nonionic surfactant was less effective in preventing the nonspecific adsorption of PAAm onto the hydrophobic monolayer. The localized reactions/interactions of adsorbed PAAm with four species that are useful for bioconjugate chemistry: glutaric anhydride, phenylenediisothiocyanate, biotin NHS ester, and an oligonucleotide (DNA) were shown in the spots of an array. The reactivity of PAAm was further demonstrated with an isocyanate. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) played an important role in confirming selective surface reactivity and adsorption. X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, and wetting confirmed PAAm reactivity on planar substrates.

  9. Formation of a silicon micropore array of a two-dimension electron multiplier by photo electrochemical etching

    International Nuclear Information System (INIS)

    Gao Yanjun; Duanmu Qingduo; Wang Guozheng; Li Ye; Tian Jingquan

    2009-01-01

    A semiconductor PEC etching method is applied to fabricate the n-type silicon deep micropore channel array. In this method, it is important to arrange the direction of the micropore array along the crystal orientation of the Si substrate. Otherwise, serious lateral erosion will happen. The etching process is also relative to the light intensity and HF concentration. 5% HF concentration and 10-15 cm distance between the light source and the silicon wafer are demonstrated to be the best in our experiments. The n-type silicon deep micropore channel array with aperture of 3 μm and aspect ratio of 40-60, whose inner walls are smooth, is finally obtained.

  10. Fluorinion transfer in silver-assisted chemical etching for silicon nanowires arrays

    International Nuclear Information System (INIS)

    Feng, Tianyu; Xu, Youlong; Zhang, Zhengwei; Mao, Shengchun

    2015-01-01

    Graphical abstract: - Highlights: • How Ag transfers F − to the adjacent Si atom was investigated and deduced by DFT at atomic scale. • Three-electrode CV tests proved the transferring function of Ag in the etching reaction. • Uniform SiNWAs were fabricated on unpolished silicon wafers with KOH pretreatment. - Abstract: Uniform silicon nanowires arrays (SiNWAs) were fabricated on unpolished rough silicon wafers through KOH pretreatment followed by silver-assisted chemical etching (SACE). Density functional theory (DFT) calculations were used to investigate the function of silver (Ag) at atomic scale in the etching process. Among three adsorption sites of Ag atom on Si(1 0 0) surface, Ag(T4) above the fourth-layer surface Si atoms could transfer fluorinion (F − ) to adjacent Si successfully due to its stronger electrostatic attraction force between Ag(T4) and F − , smaller azimuth angle of F−Ag(T4)−Si, shorter bond length of F−Si compared with F−Ag. As F − was transferred to adjacent Si by Ag(T4) one by one, the Si got away from the wafer in the form of SiF 4 when it bonded with enough F − while Ag(T4) was still attached onto the Si wafer ready for next transfer. Cyclic voltammetry tests confirmed that Ag can improve the etching rate by transferring F − to Si

  11. Electronic response of a photodiode coupled to a boron thin film

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Priscila; Costa, Fabio E.; Raele, Marcus P.; Zahn, Guilherme S.; Geraldo, Bianca; Vieira Junior, Nilson D.; Samad, Ricardo E.; Genezini, Frederico A., E-mail: priscila3.costa@usp.br, E-mail: fredzini@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    A portable thermal neutron detector is proposed in this work using a silicon photodiode coupled to a boron thin film. The aim of this work was to verify the effect in the electronic response of this specific photodiode due to boron deposition, since the direct deposition of boron in the semiconductor surface could affect its electrical properties specifically the p-type layer that affects directly the depletion region of the semiconductor reducing the neutron detector efficiency count. Three boron depositions with different thickness were performed in the photodiode (S3590-09) surface by pulsed laser deposition and the photodiode was characterized, before and after the deposition process, using a radioactive americium source. Energy spectra were used to verify the electronic response of the photodiode, due to the fact that it is possible to relate it to the photopeak pulse height and resolution. Spectra from the photodiode without and with boron film deposition were compared and a standard photodiode (S3590-04) that had the electronic signal conserved was used as reference to the pulse height for electronics adjustments. The photopeak energy resolution for the photodiode without boron layer was 10.26%. For the photodiode with boron deposition at different thicknesses, the resolution was: 7.64 % (0.14 μm), 7.30 % (0.44 μm) and 6.80 % (0.63 μm). From these results it is possible to evaluate that there was not any degradation in the silicon photodiode. (author)

  12. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  13. Simultaneous estimation of lisofylline and pentoxifylline in rat plasma by high performance liquid chromatography-photodiode array detector and its application to pharmacokinetics in rat.

    Science.gov (United States)

    Italiya, Kishan S; Sharma, Saurabh; Kothari, Ishit; Chitkara, Deepak; Mittal, Anupama

    2017-09-01

    Lisofylline (LSF) is an anti-inflammatory and immunomodulatory agent with proven activity in serious infections associated with cancer chemotherapy, hyperoxia-induced acute lung injury, autoimmune disorders including type-1 diabetes (T1DM) and islet rejection after islet transplantation. It is also an active metabolite of another anti-inflammatory agent, Pentoxifylline (PTX). LSF bears immense therapeutic potential in multiple pharmacological activities and hence appropriate and accurate quantification of LSF is very important. Although a number of analytical methods for quantification of LSF and PTX have been reported for pharmacokinetics and metabolic studies, each of these have certain limitations in terms of large sample volume required, complex extraction procedure and/or use of highly sophisticated instruments like LC-MS/MS. The aim of current study is to develop a simple reversed-phase HPLC method in rat plasma for simultaneous determination of LSF and PTX with the major objective of ensuring minimum sample volume, ease of extraction, economy of analysis, selectivity and avoiding use of instruments like LC-MS/MS to ensure a widespread application of the method. A simple liquid-liquid extraction method using methylene chloride as extracting solvent was used for extracting LSF and PTX from rat plasma (200μL). Samples were then evaporated, reconstituted with mobile phase and injected into HPLC coupled with photo-diode detector (PDA). LSF, PTX and 3-isobutyl 1-methyl xanthine (IBMX, internal standard) were separated on Inertsil® ODS (C18) column (250×4.6mm, 5μm) with mobile phase consisting of A-methanol B-water (50:50v/v) run in isocratic mode at flow rate of 1mL/min for 15min and detection at 273nm. The method showed linearity in the concentration range of 50-5000ng/mL with LOD of 10ng/mL and LLOQ of 50ng/mL for both LSF and PTX. Weighted linear regression analysis was also performed on the calibration data. The mean absolute recoveries were found to be 80

  14. A Stable Flexible Silicon Nanowire Array as Anode for High-Performance Lithium-ion Batteries

    International Nuclear Information System (INIS)

    Wang, Jiantao; Wang, Hui; Zhang, Bingchang; Wang, Yao; Lu, Shigang; Zhang, Xiaohong

    2015-01-01

    Highlights: • A flexible SiNW array in PDMS structure is designed and fabricated as Li-ion battery anode material. • The aggregation and fracture of SiNWs are alleviated by the flexible PDMS skeleton during the process of charge and discharge. • The loose SiO 2 shells coating on the SiNWscould form the protective layer in charge/discharge. • The as-obtain flexible SiNW array/PDMS composite exhibits a much better cycling stability. - Abstract: A Silicon nanowire (SiNW) array inserted into flexible poly-dimethylsiloxane (SiNW array/PDMS) composite structure as anode with high capacity and long-term cycling stability is synthesized by a cost-effective and scalable method. In this structure, the aggregation and fracture of SiNWs are alleviated by the flexible PDMS skeleton. Act as the main active component, the SiNWs are coated by loose SiO 2 shells. These loose SiO 2 shells not only provide space for the large volume changes of SiNW, but also react with the electrolyte and form the stable protective layer during the processes of the lithiation and delithiation. These two functions could improve the cycling stability and columbic efficiency of the SiNWs. The as-obtain flexible SiNW array/PDMS composite structure exhibits excellent long-term cycling stability with a specific capacity of 887.2 mA·h·g −1 and capacity retention of ∼83.4% over 350 cycles at 0.5 C rate compared with the fifteenth cycle. The design of this new structure provides a potential way for developing other functional composite materials

  15. The status of lightweight photovoltaic space array technology based on amorphous silicon solar cells

    Science.gov (United States)

    Hanak, Joseph J.; Kaschmitter, Jim

    1991-01-01

    Ultralight, flexible photovoltaic (PV) array of amorphous silicon (a-Si) was identified as a potential low cost power source for small satellites. A survey was conducted of the status of the a-Si PV array technology with respect to present and future performance, availability, cost, and risks. For existing, experimental array blankets made of commercial cell material, utilizing metal foil substrates, the Beginning of Life (BOL) performance at Air Mass Zero (AM0) and 35 C includes total power up to 200 W, power per area of 64 W/sq m and power per weight of 258 W/kg. Doubling of power per weight occurs when polyimide substrates are used. Estimated End of Life (EOL) power output after 10 years in a nominal low earth orbit would be 80 pct. of BOL, the degradation being due to largely light induced effects (-10 to -15 pct.) and in part (-5 pct.) to space radiation. Predictions for the year 1995 for flexible PV arrays, made on the basis of published results for rigid a-Si modules, indicate EOL power output per area and per weight of 105 W/sq m and 400 W/kg, respectively, while predictions for the late 1990s based on existing U.S. national PV program goals indicate EOL values of 157 W/sq m and 600 W/kg. Cost estimates by vendors for 200 W ultralight arrays in volume of over 1000 units range from $100/watt to $125/watt. Identified risks include the lack of flexible, space compatible encapsulant, the lack of space qualification effort, recent partial or full acquisitions of US manufacturers of a-Si cells by foreign firms, and the absence of a national commitment for a long range development program toward developing of this important power source for space.

  16. Reliability studies on Si PIN photodiodes under Co-60 gamma radiation

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakara Rao, Y. P. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore, Karnataka-560013 (India) and Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Praveen, K. C.; Gnana Prakash, A. P. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Rani, Y. Rejeena [Integrated Circuits Division, Bharat Electronics Limited, Bangalore, Karnataka-560013 (India)

    2013-02-05

    Silicon PIN photodiodes were fabricated with 250 nm SiO{sub 2} antireflective coating (ARC). The changes in the electrical characteristics, capacitance-voltage characteristics and spectral response after gamma irradiation are systematically studied to estimate the radiation tolerance up to 10 Mrad. The different characteristics studied in this investigation demonstrate that Si PIN photodiodes are suitable for high radiation environment.

  17. I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor.

    Science.gov (United States)

    Luongo, Giuseppe; Giubileo, Filippo; Genovese, Luca; Iemmo, Laura; Martucciello, Nadia; Di Bartolomeo, Antonio

    2017-06-27

    We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO₂/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions.

  18. I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor

    OpenAIRE

    Luongo, Giuseppe; Giubileo, Filippo; Genovese, Luca; Iemmo, Laura; Martucciello, Nadia; Di Bartolomeo, Antonio

    2017-01-01

    We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 ? A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO2/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally genera...

  19. Qualitative and quantitative characterization of secondary metabolites and carbohydrates in Bai-Hu-Tang using ultraperformance liquid chromatography coupled with quadrupole time-of-flight mass spectrometry and ultraperformance liquid chromatography coupled with photodiode array detector.

    Science.gov (United States)

    Zhong, Wei-Fang; Tong, Wing-Sum; Zhou, Shan-Shan; Yip, Ka-Man; Li, Song-Lin; Zhao, Zhong-Zhen; Xu, Jun; Chen, Hu-Biao

    2017-10-01

    Bai-Hu-Tang (BHT), a classic traditional Chinese medicine (TCM) formula used for clearing heat and promoting body fluid, consists of four traditional Chinese medicines, i.e., Gypsum Fibrosum (Shigao), Anemarrhenae Rhizoma (Zhimu), Glycyrrhizae Radix et Rhizoma Praeparata cum Melle (Zhigancao), and nonglutinous rice (Jingmi). The chemical composition of BHT still remains largely elusive thus far. To qualitatively and quantitatively characterize secondary metabolites and carbohydrates in BHT, here a combination of analytical approaches using ultraperformance liquid chromatography coupled with quadrupole time-of-flight mass spectrometry and ultraperformance liquid chromatography coupled with photodiode array detector was developed and validated. A total of 42 secondary metabolites in BHT were tentatively or definitely identified, of which 10 major chemicals were quantified by the extracting ion mode of quadrupole time-of-flight mass spectrometry. Meanwhile, polysaccharides, oligosaccharides, and monosaccharides in BHT were also characterized via sample pretreatment followed by sugar composition analysis. The quantitative results indicated that the determined chemicals accounted for 35.76% of the total extract of BHT, which demonstrated that the study could be instrumental in chemical dissection and quality control of BHT. The research deliverables not only laid the root for further chemical and biological evaluation of BHT, but also provided a comprehensive analytical strategy for chemical characterization of secondary metabolites and carbohydrates in traditional Chinese medicine formulas. Copyright © 2017. Published by Elsevier B.V.

  20. Qualitative and quantitative characterization of secondary metabolites and carbohydrates in Bai-Hu-Tang using ultraperformance liquid chromatography coupled with quadrupole time-of-flight mass spectrometry and ultraperformance liquid chromatography coupled with photodiode array detector

    Directory of Open Access Journals (Sweden)

    Wei-Fang Zhong

    2017-10-01

    Full Text Available Bai-Hu-Tang (BHT, a classic traditional Chinese medicine (TCM formula used for clearing heat and promoting body fluid, consists of four traditional Chinese medicines, i.e., Gypsum Fibrosum (Shigao, Anemarrhenae Rhizoma (Zhimu, Glycyrrhizae Radix et Rhizoma Praeparata cum Melle (Zhigancao, and nonglutinous rice (Jingmi. The chemical composition of BHT still remains largely elusive thus far. To qualitatively and quantitatively characterize secondary metabolites and carbohydrates in BHT, here a combination of analytical approaches using ultraperformance liquid chromatography coupled with quadrupole time-of-flight mass spectrometry and ultraperformance liquid chromatography coupled with photodiode array detector was developed and validated. A total of 42 secondary metabolites in BHT were tentatively or definitely identified, of which 10 major chemicals were quantified by the extracting ion mode of quadrupole time-of-flight mass spectrometry. Meanwhile, polysaccharides, oligosaccharides, and monosaccharides in BHT were also characterized via sample pretreatment followed by sugar composition analysis. The quantitative results indicated that the determined chemicals accounted for 35.76% of the total extract of BHT, which demonstrated that the study could be instrumental in chemical dissection and quality control of BHT. The research deliverables not only laid the root for further chemical and biological evaluation of BHT, but also provided a comprehensive analytical strategy for chemical characterization of secondary metabolites and carbohydrates in traditional Chinese medicine formulas.

  1. Analysis of flavonoids from lotus (Nelumbo nucifera) leaves using high performance liquid chromatography/photodiode array detector tandem electrospray ionization mass spectrometry and an extraction method optimized by orthogonal design.

    Science.gov (United States)

    Chen, Sha; Wu, Ben-Hong; Fang, Jin-Bao; Liu, Yan-Ling; Zhang, Hao-Hao; Fang, Lin-Chuan; Guan, Le; Li, Shao-Hua

    2012-03-02

    The extraction protocol of flavonoids from lotus (Nelumbo nucifera) leaves was optimized through an orthogonal design. The solvent was the most important factor comparing solvent, solvent:tissue ratio, extraction time, and temperature. The highest yield of flavonoids was achieved with 70% methanol-water and a solvent:tissue ratio of 30:1 at 4 °C for 36 h. The optimized analytical method for HPLC was a multi-step gradient elution using 0.5% formic acid (A) and CH₃CN containing 0.1% formic acid (B), at a flow rate of 0.6 mL/min. Using this optimized method, thirteen flavonoids were simultaneously separated and identified by high performance liquid chromatography coupled with photodiode array detection/electrospray ionization mass spectrometry (HPLC/DAD/ESI-MS(n)). Five of the bioactive compounds are reported in lotus leaves for the first time. The flavonoid content of the leaves of three representative cultivars was assessed under the optimized extraction and HPLC analytical conditions, and the seed-producing cultivar 'Baijianlian' had the highest flavonoid content compared with rhizome-producing 'Zhimahuoulian' and wild floral cultivar 'Honglian'. Copyright © 2012 Elsevier B.V. All rights reserved.

  2. Robust method for investigating nitrogen metabolism of 15N labeled amino acids using AccQ•Tag ultra performance liquid chromatography-photodiode array-electrospray ionization-mass spectrometry: application to a parasitic plant-plant interaction.

    Science.gov (United States)

    Gaudin, Zachary; Cerveau, Delphine; Marnet, Nathalie; Bouchereau, Alain; Delavault, Philippe; Simier, Philippe; Pouvreau, Jean-Bernard

    2014-01-21

    An AccQ•Tag ultra performance liquid chromatography-photodiode array-electrospray ionization-mass spectrometry (AccQ•Tag-UPLC-PDA-ESI-MS) method is presented here for the fast, robust, and sensitive quantification of (15)N isotopologue enrichment of amino acids in biological samples, as for example in the special biotic interaction between the cultivated specie Brassica napus (rapeseed) and the parasitic weed Phelipanche ramosa (broomrape). This method was developed and validated using amino acid standard solutions containing (15)N amino acid isotopologues and/or biological unlabeled extracts. Apparatus optimization, limits of detection and quantification, quantification reproducibility, and calculation method of (15)N isotopologue enrichment are presented. Using this method, we could demonstrate that young parasite tubercles assimilate inorganic nitrogen as (15)N-ammonium when supplied directly through batch incubation but not when supplied by translocation from host root phloem, contrary to (15)N2-glutamine. (15)N2-glutamine mobility from host roots to parasite tubercles followed by its low metabolism in tubercles suggests that the host-derived glutamine acts as an important nitrogen containing storage compound in the young tubercle of Phelipanche ramosa.

  3. Panoramic irradiator dose mapping with pin photodiodes

    International Nuclear Information System (INIS)

    Ferreira, Danilo Cardenuto; Napolitano, Celia Marina; Bueno, Carmen Cecilia

    2011-01-01

    In this work we study the possibility of using commercial silicon PIN photodiodes (Siemens, SFH 00206) for dose mapping in the Panoramic Irradiator facility at IPEN-CNEN/SP. The chosen photodiode, that is encased in 1.2 mm thickness polymer layer, displays promising dosimetric characteristics such as small size (sensitive area of 7.00 mm 2 ), high sensitivity and low dark current (≅ 300 pA, at 0 V) together with low-cost and wide availability. The Panoramic facility is an irradiator Type II with absorbed dose certificated by International Dose Assurance Service (IDAS) offered by the International Agency Energy Atomic (IAEA). The charge registered by the diode as a function of the absorbed dose was in excellent agreement with that one calibrated by IDAS. Besides this, the easy handling and fast response of the SFH00206 diode compared to Fricke chemical dosimeters encouraged us to perform dose mapping around the source. (author)

  4. Scalable gamma-ray camera for wide-area search based on silicon photomultipliers array

    Science.gov (United States)

    Jeong, Manhee; Van, Benjamin; Wells, Byron T.; D'Aries, Lawrence J.; Hammig, Mark D.

    2018-03-01

    Portable coded-aperture imaging systems based on scintillators and semiconductors have found use in a variety of radiological applications. For stand-off detection of weakly emitting materials, large volume detectors can facilitate the rapid localization of emitting materials. We describe a scalable coded-aperture imaging system based on 5.02 × 5.02 cm2 CsI(Tl) scintillator modules, each partitioned into 4 × 4 × 20 mm3 pixels that are optically coupled to 12 × 12 pixel silicon photo-multiplier (SiPM) arrays. The 144 pixels per module are read-out with a resistor-based charge-division circuit that reduces the readout outputs from 144 to four signals per module, from which the interaction position and total deposited energy can be extracted. All 144 CsI(Tl) pixels are readily distinguishable with an average energy resolution, at 662 keV, of 13.7% FWHM, a peak-to-valley ratio of 8.2, and a peak-to-Compton ratio of 2.9. The detector module is composed of a SiPM array coupled with a 2 cm thick scintillator and modified uniformly redundant array mask. For the image reconstruction, cross correlation and maximum likelihood expectation maximization methods are used. The system shows a field of view of 45° and an angular resolution of 4.7° FWHM.

  5. Electricity from photovoltaic solar cells: Flat-Plate Solar Array Project final Report. Volume II: Silicon material

    OpenAIRE

    Lutwack, R.

    1986-01-01

    The Flat-Plate Solar Array (FSA) Project, funded by the U.S. Government and managed by the Jet Propulsion Laboratory, was formed in 1975 to develop the module/array technology needed to attain widespread terrestrial use of photovoltaics by 1985. To accomplish this, the FSA Project established and managed an Industry, University, and Federal Government Team to perform the needed research and development. The goal of the Silicon Material Task, a part of the FSA Project, was to develop and ...

  6. Broadband High Efficiency Fractal-Like and Diverse Geometry Silicon Nanowire Arrays for Photovoltaic Applications

    Science.gov (United States)

    AL-Zoubi, Omar H.

    Solar energy has many advantages over conventional sources of energy. It is abundant, clean and sustainable. One way to convert solar energy directly into electrical energy is by using the photovoltaic solar cells (PVSC). Despite PVSC are becoming economically competitive, they still have high cost and low light to electricity conversion efficiency. Therefore, increasing the efficiency and reducing the cost are key elements for producing economically more competitive PVSC that would have significant impact on energy market and saving environment. A significant percentage of the PVSC cost is due to the materials cost. For that, thin films PVSC have been proposed which offer the benefits of the low amount of material and fabrication costs. Regrettably, thin film PVSC show poor light to electricity conversion efficiency because of many factors especially the high optical losses. To enhance conversion efficiency, numerous techniques have been proposed to reduce the optical losses and to enhance the absorption of light in thin film PVSC. One promising technique is the nanowire (NW) arrays in general and the silicon nanowire (SiNW) arrays in particular. The purpose of this research is to introduce vertically aligned SiNW arrays with enhanced and broadband absorption covering the entire solar spectrum while simultaneously reducing the amount of material used. To this end, we apply new concept for designing SiNW arrays based on employing diversity of physical dimensions, especially radial diversity within certain lattice configurations. In order to study the interaction of light with SiNW arrays and compute their optical properties, electromagnetic numerical modeling is used. A commercial numerical electromagnetic solver software package, high frequency structure simulation (HFSS), is utilized to model the SiNW arrays and to study their optical properties. We studied different geometries factors that affect the optical properties of SiNW arrays. Based on this study, we

  7. A Ring-shaped photodiode designed for use in a reflectance pulse oximetry sensor in wireless health monitoring applications

    DEFF Research Database (Denmark)

    Duun, Sune; Haahr, Rasmus Grønbek; Birkelund, Karen

    2010-01-01

    We report a photodiode for use in a reflectance pulse oximeter for use in autonomous and low-power homecare applications. The novelty of the reflectance pulse oximeter is a large ring shaped backside silicon pn photodiode. The ring-shaped photodiode gives optimal gathering of light and thereby...... enable very low light-emitting diode (LED) driving currents for the pulse oximeter. The photodiode also have a two layer SiO2/SiN interference filter yielding 98% transmission at the measuring wavelengths, 660 nm and 940 nm, and suppressing other wavelengths down to 50% transmission. The photodiode has...

  8. Microfabrication of an Implantable silicone Microelectrode array for an epiretinal prosthesis

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam Nader [Univ. of California, Davis, CA (United States)

    2003-06-10

    Millions of people suffering from diseases such as retinitis pigmentosa and macular degeneration are legally blind due to the loss of photoreceptor function. Fortunately a large percentage of the neural cells connected to the photoreceptors remain viable, and electrical stimulation of these cells has been shown to result in visual perception. These findings have generated worldwide efforts to develop a retinal prosthesis device, with the hope of restoring vision. Advances in microfabrication, integrated circuits, and wireless technologies provide the means to reach this challenging goal. This dissertation describes the development of innovative silicone-based microfabrication techniques for producing an implantable microelectrode array. The microelectrode array is a component of an epiretinal prosthesis being developed by a multi-laboratory consortium. This array will serve as the interface between an electronic imaging system and the human eye, directly stimulating retinal neurons via thin film conducting traces. Because the array is intended as a long-term implant, vital biological and physical design requirements must be met. A retinal implant poses difficult engineering challenges due to the size of the intraocular cavity and the delicate retina. Not only does it have to be biocompatible in terms of cytotoxicity and degradation, but it also has to be structurally biocompatible, with regard to smooth edges and high conformability; basically mimicking the biological tissue. This is vital to minimize stress and prevent physical damage to the retina. Also, the device must be robust to withstand the forces imposed on it during fabrication and implantation. In order to meet these biocompatibility needs, the use of non-conventional microfabrication materials such as silicone is required. This mandates the enhancement of currently available polymer-based fabrication techniques and the development of new microfabrication methods. Through an iterative process, devices

  9. An Antireflective Nanostructure Array Fabricated by Nanosilver Colloidal Lithography on a Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Park Seong-Je

    2010-01-01

    Full Text Available Abstract An alternative method is presented for fabricating an antireflective nanostructure array using nanosilver colloidal lithography. Spin coating was used to produce the multilayered silver nanoparticles, which grew by self-assembly and were transformed into randomly distributed nanosilver islands through the thermodynamic action of dewetting and Oswald ripening. The average size and coverage rate of the islands increased with concentration in the range of 50–90 nm and 40–65%, respectively. The nanosilver islands were critically affected by concentration and spin speed. The effects of these two parameters were investigated, after etching and wet removal of nanosilver residues. The reflection nearly disappeared in the ultraviolet wavelength range and was 17% of the reflection of a bare silicon wafer in the visible range.

  10. Two-dimensional optical phased array antenna on silicon-on-insulator.

    Science.gov (United States)

    Van Acoleyen, Karel; Rogier, Hendrik; Baets, Roel

    2010-06-21

    Optical wireless links can offer a very large bandwidth and can act as a complementary technology to radiofrequency links. Optical components nowadays are however rather bulky. Therefore, we have investigated the potential of silicon photonics to fabricated integrated components for wireless optical communication. This paper presents a two-dimensional phased array antenna consisting of grating couplers that couple light off-chip. Wavelength steering of $0.24 degrees /nm is presented reducing the need of active phase modulators. The needed steering range is $1.5 degrees . The 3dB angular coverage range of these antennas is about $0.007pi sr with a directivity of more than 38dBi and antenna losses smaller than 3dB.

  11. Periodic molybdenum disc array for light trapping in amorphous silicon layer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jiwei; Deng, Changkai [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China); Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Yang, Kang; Chen, Haiyan, E-mail: chenhy@sari.ac.cn; Li, Dongdong; Chen, Xiaoyuan [Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Ren, Wei, E-mail: renwei@shu.edu.cn [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China)

    2016-05-15

    We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO{sub 2}. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.

  12. Large-scale aligned silicon carbonitride nanotube arrays: Synthesis, characterization, and field emission property

    International Nuclear Information System (INIS)

    Liao, L.; Xu, Z.; Liu, K. H.; Wang, W. L.; Liu, S.; Bai, X. D.; Wang, E. G.; Li, J. C.; Liu, C.

    2007-01-01

    Large-scale aligned silicon carbonitride (SiCN) nanotube arrays have been synthesized by microwave-plasma-assisted chemical vapor deposition using SiH 4 , CH 4 , and N 2 as precursors. The three elements of Si, C, and N are chemically bonded with each other and the nanotube composition can be adjusted by varying the SiH 4 concentration, as revealed by electron energy loss spectroscopy and x-ray photoelectron spectroscopy. The evolution of microstructure of the SiCN nanotubes with different Si concentrations was characterized by high-resolution transmission electron microscopy and Raman spectroscopy. The dependence of field emission characteristics of the SiCN nanotubes on the composition has been investigated. With the increasing Si concentration, the SiCN nanotube exhibits more favorable oxidation resistance, which suggests that SiCN nanotube is a promising candidate as stable field emitter

  13. Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching

    Directory of Open Access Journals (Sweden)

    P. Heydari

    2014-10-01

    Full Text Available In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE was carried out with silver catalyst. Provided solution (or materiel in combination with laser interference lithography (LIL fabricated different reproducible pillars, holes and rhomboidal structures. As a result, Submicron patterning of porous areas and nanohole arrays on Si substrate with a minimum feature size of 600nm was achieved. Measured reflection spectra of the samples present different optical characteristics which is dependent on the shape, thickness of metal catalyst and periodicity of the structure. These structures can be designed to reach a photonic bandgap in special range or antireflection layer in energy harvesting applications. The resulted reflection spectra of applied method are comparable to conventional expensive and complicated dry etching techniques.

  14. Fluorinion transfer in silver-assisted chemical etching for silicon nanowires arrays

    Science.gov (United States)

    Feng, Tianyu; Xu, Youlong; Zhang, Zhengwei; Mao, Shengchun

    2015-08-01

    Uniform silicon nanowires arrays (SiNWAs) were fabricated on unpolished rough silicon wafers through KOH pretreatment followed by silver-assisted chemical etching (SACE). Density functional theory (DFT) calculations were used to investigate the function of silver (Ag) at atomic scale in the etching process. Among three adsorption sites of Ag atom on Si(1 0 0) surface, Ag(T4) above the fourth-layer surface Si atoms could transfer fluorinion (F-) to adjacent Si successfully due to its stronger electrostatic attraction force between Ag(T4) and F-, smaller azimuth angle of Fsbnd Ag(T4)sbnd Si, shorter bond length of Fsbnd Si compared with Fsbnd Ag. As F- was transferred to adjacent Si by Ag(T4) one by one, the Si got away from the wafer in the form of SiF4 when it bonded with enough F- while Ag(T4) was still attached onto the Si wafer ready for next transfer. Cyclic voltammetry tests confirmed that Ag can improve the etching rate by transferring F- to Si.

  15. Simple, Fast, and Cost-Effective Fabrication of Wafer-Scale Nanohole Arrays on Silicon for Antireflection

    Directory of Open Access Journals (Sweden)

    Di Di

    2014-01-01

    Full Text Available A simple, fast, and cost-effective method was developed in this paper for the high-throughput fabrication of nanohole arrays on silicon (Si, which is utilized for antireflection. Wafer-scale polystyrene (PS monolayer colloidal crystal was developed as templates by spin-coating method. Metallic shadow mask was prepared by lifting off the oxygen etched PS beads from the deposited chromium film. Nanohole arrays were fabricated by Si dry etching. A series of nanohole arrays were fabricated with the similar diameter but with different depth. It is found that the maximum depth of the Si-hole was determined by the diameter of the Cr-mask. The antireflection ability of these Si-hole arrays was investigated. The results show that the reflection decreases with the depth of the Si-hole. The deepest Si-hole arrays show the best antireflection ability (reflection 600 nm, which was about 28 percent of the nonpatterned silicon wafer’s reflection. The proposed method has the potential for high-throughput fabrication of patterned Si wafer, and the low reflectivity allows the application of these wafers in crystalline silicon solar cells.

  16. Synthesis, characterization and application of electroless metal assisted silicon nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Sumanta Kumar [Centre for Nanoscience & Technology, Department of Mechanical Engineering, Mepco Schlenk Engineering College, Sivakasi 626 005, Tamilnadu (India); Marikani, Arumugam, E-mail: amari@mepcoeng.ac.in [Department of Physics, Mepco Schlenk Engineering College, Sivakasi 626 005, Tamilnadu (India)

    2015-12-01

    Highlights: • Preparation of Silicon nanowire arrays (SiNWs) by electroless metal deposition technique. • From analysis, it has been found that the as-prepared SiNWs are of 3.5–4.0 μm and 75 nm of length and diameter in average respectively. Further a characteristic Raman peak at 520 cm{sup −1} also has been observed. • It exhibits good electron field-emission properties with turn-on field (E{sub 0}) of about 8.26 V μm{sup −1} at current density (J) of 4.9 μA cm{sup −2}. • Functionalized SiNWs have been used for electrochemical detection bovine serum albumin protein bio-molecules. - Abstract: Vertically aligned silicon nanowire arrays (SiNWs) have been synthesized by electroless metal deposition process. The fabricated SiNWs have an average diameter of 75 nm and 3.5–4.0 μm length, as confirmed from scanning electron microscopy. A characteristic asymmetric peak broadening at 520 cm{sup −1} from Raman spectroscopy was obtained for the SiNWs as compared to the bulk silicon crystal due to phonon confinement. The as-prepared SiNWs exhibit good electron field-emission properties with turn-on field of about 8.26 V μm{sup −1} at a current density of 4.9 μA cm{sup −2}. The SiNWs was functionalized by coating with a thin gold metallic film for 60 s, and then used as bio-probe for the detection of bovine serum albumin (BSA) protein molecules. From the linear sweep voltammetry analysis, the Au coated SiNWs, exhibit linear response to the BSA analyte with increase in concentration. The minimum detection limit of the protein molecule was calculated of about 1.16 μM by the as-synthesized SiNWs probe.

  17. Quantifying the Traction Force of a Single Cell by Aligned Silicon Nanowire Array

    KAUST Repository

    Li, Zhou

    2009-10-14

    The physical behaviors of stationary cells, such as the morphology, motility, adhesion, anchorage, invasion and metastasis, are likely to be important for governing their biological characteristics. A change in the physical properties of mammalian cells could be an indication of disease. In this paper, we present a silicon-nanowire-array based technique for quantifying the mechanical behavior of single cells representing three distinct groups: normal mammalian cells, benign cells (L929), and malignant cells (HeLa). By culturing the cells on top of NW arrays, the maximum traction forces of two different tumor cells (HeLa, L929) have been measured by quantitatively analyzing the bending of the nanowires. The cancer cell exhibits a larger traction force than the normal cell by ∼20% for a HeLa cell and ∼50% for a L929 cell. The traction forces have been measured for the L929 cells and mechanocytes as a function of culture time. The relationship between cells extending area and their traction force has been investigated. Our study is likely important for studying the mechanical properties of single cells and their migration characteristics, possibly providing a new cellular level diagnostic technique. © 2009 American Chemical Society.

  18. Label-free silicon photonic biosensor system with integrated detector array

    Science.gov (United States)

    Yan, Rongjin; Mestas, Santano P.; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S.

    2010-01-01

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide’s upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip. PMID:19606292

  19. Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms

    Energy Technology Data Exchange (ETDEWEB)

    Carapezzi, Stefania; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, V.le Berti Pichat 6/2, Bologna (Italy); Irrera, Alessia [IPCF CNR, Viale Stagno D' Alcontres n. 37-98158, Messina, Italy and MATIS IMM CNR, Viale Santa Sofia n. 64, 95123 Catania (Italy)

    2014-02-21

    The huge amount of knowledge, and infrastructures, brought by silicon (Si) technology, make Si Nanowires (NWs) an ideal choice for nano-electronic Si-based devices. This, in turn, challenges the scientific research to adapt the technical and theoretical paradigms, at the base of established experimental techniques, in order to probe the properties of these systems. Metal-assisted wet-Chemical Etching (MaCE) [1, 2] is a promising fast, easy and cheap method to grow high aspect-ratio aligned Si NWs. Further, contrary to other fabrication methods, this method avoids the possible detrimental effects related to Au diffusion into NWs. We investigated the bandgap level diagram of MaCE Si NW arrays, phosphorous-doped, by means of Deep Level Transient Spectroscopy. The presence of both shallow and deep levels has been detected. The results have been examined in the light of the specificity of the MaCE growth. The study of the electronic levels in Si NWs is, of course, of capital importance in view of the integration of Si NW arrays as active layers in actual devices.

  20. Label-free silicon photonic biosensor system with integrated detector array.

    Science.gov (United States)

    Yan, Rongjin; Mestas, Santano P; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S; Lear, Kevin L

    2009-08-07

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide's upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip.

  1. Silicon-on-insulator based nanopore cavity arrays for lipid membrane investigation.

    Science.gov (United States)

    Buchholz, K; Tinazli, A; Kleefen, A; Dorfner, D; Pedone, D; Rant, U; Tampé, R; Abstreiter, G; Tornow, M

    2008-11-05

    We present the fabrication and characterization of nanopore microcavities for the investigation of transport processes in suspended lipid membranes. The cavities are situated below the surface of silicon-on-insulator (SOI) substrates. Single cavities and large area arrays were prepared using high resolution electron-beam lithography in combination with reactive ion etching (RIE) and wet chemical sacrificial underetching. The locally separated compartments have a circular shape and allow the enclosure of picoliter volume aqueous solutions. They are sealed at their top by a 250 nm thin Si membrane featuring pores with diameters from 2 µm down to 220 nm. The Si surface exhibits excellent smoothness and homogeneity as verified by AFM analysis. As biophysical test system we deposited lipid membranes by vesicle fusion, and demonstrated their fluid-like properties by fluorescence recovery after photobleaching. As clearly indicated by AFM measurements in aqueous buffer solution, intact lipid membranes successfully spanned the pores. The nanopore cavity arrays have potential applications in diagnostics and pharmaceutical research on transmembrane proteins.

  2. Pulse shape discrimination using EJ-299-33 plastic scintillator coupled with a Silicon Photomultiplier array

    International Nuclear Information System (INIS)

    Liao, Can; Yang, Haori

    2015-01-01

    Recent developments in organic plastic scintillators capable of pulse shape discrimination (PSD) have gained much interest. Novel photon detectors, such as Silicon Photomultipliers (SiPMs), offer numerous advantages and can be used as an alternative to conventional photo multiplier tubes (PMTs) in many applications. In this work, we evaluate the PSD performance of the EJ-299-33 plastic scintillator coupled with a SiPM array. 2D PSD plots as well as the Figure of Merit (FOM) parameters are presented to demonstrate the PSD capability of EJ-299-33 using a SiPM as the light sensor. The best FOM of 0.76 was observed with a 1.0 MeVee (MeV-electron-equivalent) energy threshold, despite the high noise level of the SiPM array. A high-speed digital oscilloscope was used to acquire data, which was then processed offline in MATLAB. A performance comparison between two different PSD algorithms was carried out. The dependence of PSD quality on the sampling rate was also evaluated, stimulated by the interest to implement this setup for handheld applications where power consumption is crucial

  3. Optimal and Local Connectivity Between Neuron and Synapse Array in the Quantum Dot/Silicon Brain

    Science.gov (United States)

    Duong, Tuan A.; Assad, Christopher; Thakoor, Anikumar P.

    2010-01-01

    This innovation is used to connect between synapse and neuron arrays using nanowire in quantum dot and metal in CMOS (complementary metal oxide semiconductor) technology to enable the density of a brain-like connection in hardware. The hardware implementation combines three technologies: 1. Quantum dot and nanowire-based compact synaptic cell (50x50 sq nm) with inherently low parasitic capacitance (hence, low dynamic power approx.l0(exp -11) watts/synapse), 2. Neuron and learning circuits implemented in 50-nm CMOS technology, to be integrated with quantum dot and nanowire synapse, and 3. 3D stacking approach to achieve the overall numbers of high density O(10(exp 12)) synapses and O(10(exp 8)) neurons in the overall system. In a 1-sq cm of quantum dot layer sitting on a 50-nm CMOS layer, innovators were able to pack a 10(exp 6)-neuron and 10(exp 10)-synapse array; however, the constraint for the connection scheme is that each neuron will receive a non-identical 10(exp 4)-synapse set, including itself, via its efficacy of the connection. This is not a fully connected system where the 100x100 synapse array only has a 100-input data bus and 100-output data bus. Due to the data bus sharing, it poses a great challenge to have a complete connected system, and its constraint within the quantum dot and silicon wafer layer. For an effective connection scheme, there are three conditions to be met: 1. Local connection. 2. The nanowire should be connected locally, not globally from which it helps to maximize the data flow by sharing the same wire space location. 3. Each synapse can have an alternate summation line if needed (this option is doable based on the simple mask creation). The 10(exp 3)x10(exp 3)-neuron array was partitioned into a 10-block, 10(exp 2)x10(exp 3)-neuron array. This building block can be completely mapped within itself (10,000 synapses to a neuron).

  4. Development of a gamma dosimeter using a photodiode

    International Nuclear Information System (INIS)

    Melo, F.A. de.

    1988-05-01

    In the last years, the application of semiconductor detectors in radiation spectroscopy and dosimetry has increased. Silicon diodes have found utility in radiation dosimetry principally because a diode produces a current approximately 18000 times larger than of an ionization chamber of an equal sensitive volume. As the characteristics of the semiconductor detectors are the same as the common photodiode, a gamma dosimeter using this type of electronic component was developed. The photodiode SFH206 operating in photovoltaic mode was used. An electrometric unit was constructed to measure the current generated in this detector. The results obtained showed: the response of the photodiode was linear with the dose and that variation of 40 degrees in the incidence angle of the radiation caused a variation of 5% in the dose determination; the response reproducibility of the photodiode was studied, and the results showed that the variation coefficient is smaller than 0,02%; the small dimension of the silicon photodiode recommend its use as a gamma dosimeter for medical applications. (author). 19 refs, 32 figs, 1 tab

  5. Development and validation of a rapid high performance liquid chromatography - photodiode array detection method for estimation of a bioactive compound wedelolactone in extracts of Eclipta alba

    Directory of Open Access Journals (Sweden)

    Satyanshu Kumar

    2013-03-01

    Full Text Available Following optimization of extraction, separation and analytical conditions, a rapid, sensitive and simple reverse-phase high performance liquid chromatography-photo diode array (HPLC-PDA method has been developed for the identification and quantification of wedelolactone in different extracts of Eclipta alba. The separation of wedelolactone was achieved on a C18 column using the solvent system consisting of a mixture of methanol: water: acetic acid (95: 5: 0.04 as a mobile phase in isocratic elution mode followed by photo diode array detection at 352 nm. The developed method was validated as per the guidelines of the International Conference on Harmonization (ICH. Calibration curve presented good linear regression (r²>0.998 within the test range and the maximum relative standard deviation (RSD, % values for intra-day assay were found to be 0.15, 1.30 and 1.1 for low (5 µg/mL, medium (20 µg/mL and high (80 µg/mL concentrations of wedelolactone. For inter-day assay the maximum RSD (% values were found to be 2.83, 1.51 and 2.06 for low, medium and high concentrations, respectively. Limit of detection (LOD and limit of quantification (LOQ were calculated to be 2 and 5 µg/mL respectively. Analytical recovery of wedelolactone was greater than 95%. Wedelolactone in different extracts of Eclipta alba was identified and quantified using the developed HPLC method. The validated HPLC method allowed precise quantitative analysis of wedelolactone in Eclipta. alba extracts.Desenvolveu-se método rápido, sensível e simples de Cromatografia Líquida de Alta Eficiência em fase reversa, utilizando-se arranjo de fotodiodo (HPLC-PDA, visando à separação, extração e às condições analíticas para a identificação e quantificação de wedelolactona em diferentes extratos de Eclipta alba. A separação de wedelolactona foi efetuada por meio de uma coluna C18, utilizando mistura de metanol:água:ácido acético (95:5:0.04 como fase móvel, em sistema de

  6. Determination of interglycosidic linkages in O-glycosyl flavones by high-performance liquid chromatography/photodiode-array detection coupled to electrospray ionization ion trap mass spectrometry. Its application to Tetragonula carbonaria honey from Australia.

    Science.gov (United States)

    Truchado, Pilar; Vit, Patricia; Heard, Tim A; Tomás-Barberán, Francisco A; Ferreres, Federico

    2015-05-30

    Tetragonula carbonaria pot-honeys are highly valued as a food source and for their biological activities in Australia, and there is a growing interest to know its composition. Phenolic metabolites, which could be related to their beneficial properties, have not been studied in depth yet. Mass spectrometry (MS) coupled to liquid chromatography (LC) is an advanced technique for the study of complex flavonoids present in difficult food matrices that hampers their isolation and purification. This allows the tentative characterization of diglycosides/triglycosides establishing the position of the O-glycosylation on the sugar moiety by the study of the MS data in T. carbonaria pot-honeys from Australia. Their spectra obtained by high-performance liquid chromatography/photodiode-array detection/electrospray ionization ion trap mass spectrometry (HPLC/DAD/ESI-MS(n) ) revealed for the first time 19 quercetin, kaempferol and isorhamnetin O-glycosides. These compounds were clustered in flavonoid triglycosides, diglycosides and monoglycosides. The first cluster contained one flavonoid trihexoside, two -3-O-(2-hexosyl, 6-rhamnosyl)hexosides and their isomers and two -3-O-(2,6-di-rhamnosyl)hexosides. In the second cluster, eleven flavonoid diglycosides such as three -3-O-(2-hexosyl)hexosides, four -3-O-(2-rhamnosyl)hexosides and one -3-O-(6-rhamnosyl)hexoside as well as two -3-O-(2-pentosyl)hexosides and one tentative -3-O-(3-pentosyl)hexoside were detected. In the monoglycoside group, only one flavonoid -3-O-hexoside was identified. The occurrence of this large number of flavonoid glycosides could be due to the low glucosidase activity previously reported in stingless bee honey. Copyright © 2015 John Wiley & Sons, Ltd.

  7. Signal encoding method for a time-of-flight PET detector using a silicon photomultiplier array

    Science.gov (United States)

    Kwon, Sun Il; Lee, Jae Sung

    2014-10-01

    The silicon photomultiplier (SiPM) is a promising photosensor for magnetic resonance (MR) compatible time-of-flight (TOF) positron emission tomography (PET) scanners. The compact size of the SiPM allows direct one-to-one coupling between the scintillation crystal and the photosensor, yielding better timing and energy resolutions than the light sharing methods that have to be used in photomultiplier tube (PMT) PET systems. However, the one-to-one coupling scheme requires a huge volume of readout and processing electronics if no electric signal multiplexing or encoding scheme is properly applied. In this paper, we develop an electric signal encoding scheme for SiPM array based TOF PET detector blocks with the aim of reducing the complexity and volume of the signal readout and processing electronics. In an M×N SiPM array, the output signal of each channel in the SiPM array is divided into two signal lines. These output lines are then tied together in row and column lines. The row and column signals are used to measure the energy and timing information (or vice versa) of each incident gamma-ray event, respectively. Each SiPM channel was directly coupled to a 3×3×20 mm3 LGSO crystal. The reference detector, which was used to measure timing, consisted of an R9800 PMT and a 4×4×10 mm3 LYSO crystal and had a single time resolution of ~200 ps (FWHM). Leading edge discriminators were used to determine coincident events. Dedicated front-end electronics were developed, and the timing and energy resolutions of SiPM arrays with different array sizes (4×4, 8×8, and 12×12) were compared. Breakdown voltage of each SiPM channel was measured using energy spectra within various bias voltages. Coincidence events were measured using a 22Na point source. The average coincidence time resolution of 4×4, 8×8, and 12×12 SiPM arrays were 316 ps, 320 ps, and 335 ps (FWHM), respectively. The energy resolution of 4×4, 8×8, and 12×12 SiPM arrays were 11.8%, 12.5%, and 12.8% (FWHM

  8. Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology

    Science.gov (United States)

    Llobet, J.; Rius, G.; Chuquitarqui, A.; Borrisé, X.; Koops, R.; van Veghel, M.; Perez-Murano, F.

    2018-04-01

    We present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and silicon amorphization, plus selective silicon etching by tetramethylammonium hydroxide, and a thermal annealing process in a boron rich atmosphere. The last step enables the electrical functionality of the irradiated material. Doubly clamped silicon beams are fabricated by this method. The electrical readout of their mechanical response can be addressed by a frequency down-mixing detection technique thanks to an enhanced piezoresistive transduction mechanism. Three specific aspects are discussed: (i) the engineering of mechanically coupled SiNWs, by making use of the nanometer scale overhang that it is inherently-generated with this fabrication process, (ii) the statistical distribution of patterned lateral dimensions when fabricating large arrays of identical devices, and (iii) the compatibility of the patterning methodology with CMOS circuits. Our results suggest that the application of this method to the integration of large arrays of suspended SiNWs with CMOS circuitry is interesting in view of applications such as advanced radio frequency band pass filters and ultra-high-sensitivity mass sensors.

  9. Micromachined silicon parallel acoustic delay lines as time-delayed ultrasound detector array for real-time photoacoustic tomography

    Science.gov (United States)

    Cho, Y.; Chang, C.-C.; Wang, L. V.; Zou, J.

    2016-02-01

    This paper reports the development of a new 16-channel parallel acoustic delay line (PADL) array for real-time photoacoustic tomography (PAT). The PADLs were directly fabricated from single-crystalline silicon substrates using deep reactive ion etching. Compared with other acoustic delay lines (e.g., optical fibers), the micromachined silicon PADLs offer higher acoustic transmission efficiency, smaller form factor, easier assembly, and mass production capability. To demonstrate its real-time photoacoustic imaging capability, the silicon PADL array was interfaced with one single-element ultrasonic transducer followed by one channel of data acquisition electronics to receive 16 channels of photoacoustic signals simultaneously. A PAT image of an optically-absorbing target embedded in an optically-scattering phantom was reconstructed, which matched well with the actual size of the imaged target. Because the silicon PADL array allows a signal-to-channel reduction ratio of 16:1, it could significantly simplify the design and construction of ultrasonic receivers for real-time PAT.

  10. Micromachined silicon parallel acoustic delay lines as time-delayed ultrasound detector array for real-time photoacoustic tomography

    International Nuclear Information System (INIS)

    Cho, Y; Chang, C-C; Zou, J; Wang, L V

    2016-01-01

    This paper reports the development of a new 16-channel parallel acoustic delay line (PADL) array for real-time photoacoustic tomography (PAT). The PADLs were directly fabricated from single-crystalline silicon substrates using deep reactive ion etching. Compared with other acoustic delay lines (e.g., optical fibers), the micromachined silicon PADLs offer higher acoustic transmission efficiency, smaller form factor, easier assembly, and mass production capability. To demonstrate its real-time photoacoustic imaging capability, the silicon PADL array was interfaced with one single-element ultrasonic transducer followed by one channel of data acquisition electronics to receive 16 channels of photoacoustic signals simultaneously. A PAT image of an optically-absorbing target embedded in an optically-scattering phantom was reconstructed, which matched well with the actual size of the imaged target. Because the silicon PADL array allows a signal-to-channel reduction ratio of 16:1, it could significantly simplify the design and construction of ultrasonic receivers for real-time PAT. (paper)

  11. Determination of selected water-soluble vitamins using hydrophilic chromatography: a comparison of photodiode array, fluorescence, and coulometric detection, and validation in a breakfast cereal matrix.

    Science.gov (United States)

    Langer, Swen; Lodge, John K

    2014-06-01

    Water-soluble vitamins are an important class of compounds that require quantification from food sources to monitor nutritional value. In this study we have analysed six water-soluble B vitamins ([thiamine (B1), riboflavin (B2), nicotinic acid (B3, NAc), nicotinamide (B3, NAm), pyridoxal (B6), folic acid (B9)], and ascorbic acid (vit C) with hydrophilic interaction liquid chromatography (HILIC), and compared UV, fluorescent (FLD) and coulometric detection to optimise a method to quantitate the vitamins from food sources. Employing UV/diode array (DAD) and fluorimetric detection, six B vitamins were detected in a single run using gradient elution from 100% to 60% solvent B [10mM ammonium acetate, pH 5.0, in acetonitrile and water 95:5 (v:v)] over 18 min. UV detection was performed at 268 nm for B1, 260 nm for both B3 species and 284 nm for B9. FLD was employed for B2 at excitation wavelength of 268 nm, emission of 513 nm, and 284 nm/317 nm for B6. Coulometric detection can be used to detect B6 and B9, and vit C, and was performed isocratically at 75% and 85% of solvent B, respectively. B6 was analysed at a potential of 720 mV, while B9 was analysed at 600 mV, and vit C at 30 mV. Retention times (0.96 to 11.81 min), intra-day repeatability (CV 1.6 to 3.6), inter-day variability (CV 1.8 to 11.1), and linearity (R 0.9877 to 0.9995) remained good under these conditions with limits of detection varying from 6.6 to 164.6 ng mL(-1), limits of quantification between 16.8 and 548.7 ng mL(-1). The method was successfully applied for quantification of six B vitamins from a fortified food product and is, to our knowledge, the first to simultaneously determine multiple water-soluble vitamins extracted from a food matrix using HILIC. Copyright © 2014 Elsevier B.V. All rights reserved.

  12. A silicon strip detector array for energy verification and quality assurance in heavy ion therapy.

    Science.gov (United States)

    Debrot, Emily; Newall, Matthew; Guatelli, Susanna; Petasecca, Marco; Matsufuji, Naruhiro; Rosenfeld, Anatoly B

    2018-02-01

    The measurement of depth dose profiles for range and energy verification of heavy ion beams is an important aspect of quality assurance procedures for heavy ion therapy facilities. The steep dose gradients in the Bragg peak region of these profiles require the use of detectors with high spatial resolution. The aim of this work is to characterize a one dimensional monolithic silicon detector array called the "serial Dose Magnifying Glass" (sDMG) as an independent ion beam energy and range verification system used for quality assurance conducted for ion beams used in heavy ion therapy. The sDMG detector consists of two linear arrays of 128 silicon sensitive volumes each with an effective size of 2mm × 50μm × 100μm fabricated on a p-type substrate at a pitch of 200 μm along a single axis of detection. The detector was characterized for beam energy and range verification by measuring the response of the detector when irradiated with a 290 MeV/u 12 C ion broad beam incident along the single axis of the detector embedded in a PMMA phantom. The energy of the 12 C ion beam incident on the detector and the residual energy of an ion beam incident on the phantom was determined from the measured Bragg peak position in the sDMG. Ad hoc Monte Carlo simulations of the experimental setup were also performed to give further insight into the detector response. The relative response profiles along the single axis measured with the sDMG detector were found to have good agreement between experiment and simulation with the position of the Bragg peak determined to fall within 0.2 mm or 1.1% of the range in the detector for the two cases. The energy of the beam incident on the detector was found to vary less than 1% between experiment and simulation. The beam energy incident on the phantom was determined to be (280.9 ± 0.8) MeV/u from the experimental and (280.9 ± 0.2) MeV/u from the simulated profiles. These values coincide with the expected energy of 281 MeV/u. The sDMG detector

  13. Silicon PIN diode hybrid arrays for charged particle detection: Building blocks for vertex detectors at the SSC

    International Nuclear Information System (INIS)

    Kramer, G.; Gaalema, S.; Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.

    1989-05-01

    Two-dimensional arrays of solid state detectors have long been used in visible and infrared systems. Hybrid arrays with separately optimized detector and readout substrates have been extensively developed for infrared sensors. The characteristics and use of these infrared readout chips with silicon PIN diode arrays produced by MICRON SEMICONDUCTOR for detecting high-energy particles are reported. Some of these arrays have been produced in formats as large as 512 /times/ 512 pixels; others have been radiation hardened to total dose levels beyond 1 Mrad. Data generation rates of 380 megasamples/second have been achieved. Analog and digital signal transmission and processing techniques have also been developed to accept and reduce these high data rates. 9 refs., 15 figs., 2 tabs

  14. Investigation of avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Si Mohand, D.; Benhammou, Y.; Depasse, P.; Goyot, M.; Ille, B.; Linard, E.; Martin, F.; Musienko, Y.

    1996-06-01

    Some characteristics and performances of a set of nine Hamamatsu avalanche photodiodes have been investigated. These APDs have equipped a small 3x3 PbWO{sub 4} crystal matrix in X3 beam during the summer of 1995. This note summarizes the main results of this work. An electromagnetic calorimeter with a high resolution is necessary to search for the Higgs if it has a mass between 80 and 160 GeV. A PbWO{sub 4} crystal option has been chosen by the CMS collaboration to achieve this task. The light is collected and converted into an electric charge by an Avalanche Photodiode (APD) followed by a fast preamplifier. The advantage of the APDs is that they are not sensitive to the strong magnetic field when compared to photomultipliers and they are a small nuclear counter effect when compared to PIN diodes. In this study, we have tested nine low capacitance Hamamatsu APDs (S5345) received in spring, 1995 with an area of 0.2 cm{sup 2}. We have measured the capacitance and dark current for each APD. The gain measurements have also been done with gamma sources, continuous and pulsed light. The gain sensitivity versus bias and temperature have also been investigated succinctly. (author). 8 refs., 16 figs., 1 tab.

  15. Investigation of avalanche photodiodes

    International Nuclear Information System (INIS)

    Si Mohand, D.; Benhammou, Y.; Depasse, P.; Goyot, M.; Ille, B.; Linard, E.; Martin, F.; Musienko, Y.

    1996-06-01

    Some characteristics and performances of a set of nine Hamamatsu avalanche photodiodes have been investigated. These APDs have equipped a small 3x3 PbWO 4 crystal matrix in X3 beam during the summer of 1995. This note summarizes the main results of this work. An electromagnetic calorimeter with a high resolution is necessary to search for the Higgs if it has a mass between 80 and 160 GeV. A PbWO 4 crystal option has been chosen by the CMS collaboration to achieve this task. The light is collected and converted into an electric charge by an Avalanche Photodiode (APD) followed by a fast preamplifier. The advantage of the APDs is that they are not sensitive to the strong magnetic field when compared to photomultipliers and they are a small nuclear counter effect when compared to PIN diodes. In this study, we have tested nine low capacitance Hamamatsu APDs (S5345) received in spring, 1995 with an area of 0.2 cm 2 . We have measured the capacitance and dark current for each APD. The gain measurements have also been done with gamma sources, continuous and pulsed light. The gain sensitivity versus bias and temperature have also been investigated succinctly. (author). 8 refs., 16 figs., 1 tab

  16. Silicon materials task of the Low Cost Solar Array Project: Effect of impurities and processing on silicon solar cells

    Science.gov (United States)

    Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Hanes, M. H.; Rai-Choudhury, P.; Mollenkopf, H. C.

    1982-01-01

    The effects of impurities and processing on the characteristics of silicon and terrestrial silicon solar cells were defined in order to develop cost benefit relationships for the use of cheaper, less pure solar grades of silicon. The amount of concentrations of commonly encountered impurities that can be tolerated in typical p or n base solar cells was established, then a preliminary analytical model from which the cell performance could be projected depending on the kinds and amounts of contaminants in the silicon base material was developed. The impurity data base was expanded to include construction materials, and the impurity performace model was refined to account for additional effects such as base resistivity, grain boundary interactions, thermal processing, synergic behavior, and nonuniform impurity distributions. A preliminary assessment of long term (aging) behavior of impurities was also undertaken.

  17. Radon measurements with a PIN photodiode

    International Nuclear Information System (INIS)

    Martin-Martin, A.; Gutierrez-Villanueva, J.L.; Munoz, J.M.; Garcia-Talavera, M.; Adamiec, G.; Iniguez, M.P.

    2006-01-01

    Silicon photodiodes are well suited to detect alphas coming from different sources as neutron reactions or radon daughters. In this work a radon in air detecting device, using an 18x18 mm silicon PIN photodiode is studied. The ionized airborne decay products formed during radon diffusion were focused by an accelerating high voltage to the PIN surface. Several conducting rings were disposed inside a cylindrical PVC vessel in such a way that they reproduced the electric field created by a punctual charge located behind PIN position. Alpha spectra coming from the neutral and ionized species deposited on the PIN surface, dominated by 218 Po and 214 Po progeny peaks, were recorded for varying conditions. Those include radon concentration from a Pylon source, high voltage (thousands of volts) and PIN inverse bias voltage. Different parameters such as temperature and humidity were also registered during data acquisition. The increase in the particle collection efficiency with respect to zero electric field was compared with the corresponding to a parallel plates configuration. A discussion is made in terms of the most appropriate voltages for different radon concentrations

  18. Development of a multi-channel front-end electronics module based on ASIC for silicon strip array detectors

    International Nuclear Information System (INIS)

    Zhao Xingwen; Yan Duo; Su Hong; Qian Yi; Kong Jie; Zhang Xueheng; Li Zhankui; Li Haixia

    2014-01-01

    The silicon strip array detector is one of external target facility subsystems in the Cooling Storage Ring on the Heavy Ion Research Facility at Lanzhou (HIRFL-CSR). Using the ASICs, the front-end electronics module has been developed for the silicon strip array detectors and can implement measurement of energy of 96 channels. The performance of the front-end electronics module has been tested. The energy linearity of the front-end electronics module is better than 0.3% for the dynamic range of 0.1∼0.7 V. The energy resolution is better than 0.45%. The maximum channel crosstalk is better than 10%. The channel consistency is better than 1.3%. After continuously working for 24 h at room temperature, the maximum drift of the zero-peak is 1.48 mV. (authors)

  19. The influence of passivation and photovoltaic properties of α-Si:H coverage on silicon nanowire array solar cells

    Science.gov (United States)

    2013-01-01

    Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (Voc) lead to lower energy conversion efficiencies. In such cases, the performance of the solar cells depends critically on the quality of the SiNW interfaces. In this study, SiNW core-shell solar cells have been fabricated by growing crystalline silicon (c-Si) nanowires via the metal-assisted chemical etching method and by depositing hydrogenated amorphous silicon (α-Si:H) via the plasma-enhanced chemical vapor deposition (PECVD) method. The influence of deposition parameters on the coverage and, consequently, the passivation and photovoltaic properties of α-Si:H layers on SiNW solar cells have been analyzed. PMID:24059343

  20. Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

    Energy Technology Data Exchange (ETDEWEB)

    Baszczyk, M., E-mail: baszczyk@agh.edu.pl [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); Dorosz, P.; Glab, S.; Kucewicz, W. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); Mik, L. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); State Higher Vocational School, Tarnow (Poland); Sapor, M. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland)

    2016-07-11

    Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

  1. Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

    Science.gov (United States)

    Baszczyk, M.; Dorosz, P.; Glab, S.; Kucewicz, W.; Mik, L.; Sapor, M.

    2016-07-01

    Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

  2. Thermally responsive silicon nanowire arrays for native/denatured-protein separation

    International Nuclear Information System (INIS)

    Wang Hongwei; Wang Yanwei; Yuan Lin; Wang Lei; Yang Weikang; Wu Zhaoqiang; Li Dan; Chen Hong

    2013-01-01

    We present our findings of the selective adsorption of native and denatured proteins onto thermally responsive, native-protein resistant poly(N-isopropylacrylamide) (PNIPAAm) decorated silicon nanowire arrays (SiNWAs). The PNIPAAm–SiNWAs surface, which shows very low levels of native-protein adsorption, favors the adsorption of denatured proteins. The amount of denatured-protein adsorption is higher at temperatures above the lower critical solution temperature (LCST) of PNIPAAm. Temperature cycling surrounding the LCST, which ensures against thermal denaturation of native proteins, further increases the amount of denatured-protein adsorption. Moreover, the PNIPAAm–SiNWAs surface is able to selectively adsorb denatured protein even from mixtures of different protein species; meanwhile, the amount of native proteins in solution is kept nearly at its original level. It is believed that these results will not only enrich current understanding of protein interactions with PNIPAAm-modified SiNWAs surfaces, but may also stimulate applications of PNIPAAm–SiNWAs surfaces for native/denatured protein separation. (paper)

  3. An Improved Manufacturing Approach for Discrete Silicon Microneedle Arrays with Tunable Height-Pitch Ratio

    Directory of Open Access Journals (Sweden)

    Renxin Wang

    2016-10-01

    Full Text Available Silicon microneedle arrays (MNAs have been widely studied due to their potential in various transdermal applications. However, discrete MNAs, as a preferred choice to fabricate flexible penetrating devices that could adapt curved and elastic tissue, are rarely reported. Furthermore, the reported discrete MNAs have disadvantages lying in uniformity and height-pitch ratio. Therefore, an improved technique is developed to manufacture discrete MNA with tunable height-pitch ratio, which involves KOH-dicing-KOH process. The detailed process is sketched and simulated to illustrate the formation of microneedles. Furthermore, the undercutting of convex mask in two KOH etching steps are mathematically analyzed, in order to reveal the relationship between etching depth and mask dimension. Subsequently, fabrication results demonstrate KOH-dicing-KOH process. {321} facet is figured out as the surface of octagonal pyramid microneedle. MNAs with diverse height and pitch are also presented to identify the versatility of this approach. At last, the metallization is realized via successive electroplating.

  4. Desarrollo de un circuito integrado de múltiples canales para Silicon fotomultiplicador arrays lectura

    CERN Document Server

    Comerma i Montells, Albert

    2013-10-31

    The aim of this thesis is to present a solution for the readout of Silicon Photo-Multipliers (SiPMs) arrays improving currently implemented systems. Using as a starting point previous designs with similar objectives a novel current mode input stage has been designed and tested. To start with the design a valid model has been used to generate realistic output from the SiPMs depending on light input. Design has been performed in first place focusing in general applications for medical imaging Positron Emission Tomography (PET) and then using the same topology for a more constrained design in particle detectors (upgrade of Tracker detector at LHCb experiment). A 16 channel ASIC for PET applications including the novel input stage has demonstrated an excellent timing measurement with good energy resolution measurement and pile-up detection. This document starts with the analysis of the requirements needed to fit such a system. Followed by a detailed description of the input stage and analog processing. Signal is ...

  5. Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

    International Nuclear Information System (INIS)

    Baszczyk, M.; Dorosz, P.; Glab, S.; Kucewicz, W.; Mik, L.; Sapor, M.

    2016-01-01

    Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

  6. Measurement and Simulation of the Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays

    Science.gov (United States)

    Howe, Christina L.; Weller, Robert A.; Reed, Robert A.; Sierawski, Brian D.; Marshall, Paul W.; Marshall, Cheryl J.; Mendenhall, Marcus H.; Schrimpf, Ronald D.

    2007-01-01

    The proton induced charge deposition in a well characterized silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, together with pile up, to accurately describe the experimental data. Simulation results reveal important high energy events not easily detected through experiment due to low statistics. The effects of each physical mechanism on the device response is shown for a single proton energy as well as a full proton space flux.

  7. Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

    Science.gov (United States)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

    2014-03-01

    The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

  8. Relaxing the electrostatic screening effect by patterning vertically-aligned silicon nanowire arrays into bundles for field emission application

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Yung-Jr, E-mail: yungjrhung@gmail.com [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Department of Photonics, National Sun Yat-sen University, No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, San-Liang [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Beng, Looi Choon [Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chang, Hsuan-Chen [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Huang, Yung-Jui [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, Kuei-Yi; Huang, Ying-Sheng [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China)

    2014-04-01

    Top-down fabrication strategies are proposed and demonstrated to realize arrays of vertically-aligned silicon nanowire bundles and bundle arrays of carbon nanotube–silicon nanowire (CNT–SiNW) heterojunctions, aiming for releasing the electrostatic screening effect and improving the field emission characteristics. The trade-off between the reduction in the electrostatic screening effect and the decrease of emission sites leads to an optimal SiNW bundle arrangement which enables the lowest turn-on electric field of 1.4 V/μm and highest emission current density of 191 μA/cm{sup 2} among all testing SiNW samples. Benefiting from the superior thermal and electrical properties of CNTs and the flexible patterning technologies available for SiNWs, bundle arrays of CNT–SiNW heterojunctions show improved and highly-uniform field emission with a lower turn-on electric field of 0.9 V/μm and higher emission current density of 5.86 mA/cm{sup 2}. The application of these materials and their corresponding fabrication approaches is not limited to the field emission but can be used for a variety of emerging fields like nanoelectronics, lithium-ion batteries, and solar cells. - Highlights: • Aligned silicon nanowire (SiNW) bundle arrays are realized with top-down methods. • Growing carbon nanotubes atop SiNW bundle arrays enable uniform field emission. • A turn-on field of 0.9 V/μm and an emission current of > 5 mA/cm{sup 2} are achieved.

  9. Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

    Science.gov (United States)

    Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

    1978-01-01

    Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

  10. Performance of in-pixel circuits for photon counting arrays (PCAs) based on polycrystalline silicon TFTs

    International Nuclear Information System (INIS)

    Liang, Albert K; Koniczek, Martin; Antonuk, Larry E; El-Mohri, Youcef; Zhao, Qihua; Street, Robert A; Lu, Jeng Ping

    2016-01-01

    Photon counting arrays (PCAs), defined as pixelated imagers which measure the absorbed energy of x-ray photons individually and record this information digitally, are of increasing clinical interest. A number of PCA prototypes with a 1 mm pixel-to-pixel pitch have recently been fabricated with polycrystalline silicon (poly-Si)—a thin-film technology capable of creating monolithic imagers of a size commensurate with human anatomy. In this study, analog and digital simulation frameworks were developed to provide insight into the influence of individual poly-Si transistors on pixel circuit performance—information that is not readily available through empirical means. The simulation frameworks were used to characterize the circuit designs employed in the prototypes. The analog framework, which determines the noise produced by individual transistors, was used to estimate energy resolution, as well as to identify which transistors contribute the most noise. The digital framework, which analyzes how well circuits function in the presence of significant variations in transistor properties, was used to estimate how fast a circuit can produce an output (referred to as output count rate). In addition, an algorithm was developed and used to estimate the minimum pixel pitch that could be achieved for the pixel circuits of the current prototypes. The simulation frameworks predict that the analog component of the PCA prototypes could have energy resolution as low as 8.9% full width at half maximum (FWHM) at 70 keV; and the digital components should work well even in the presence of significant thin-film transistor (TFT) variations, with the fastest component having output count rates as high as 3 MHz. Finally, based on conceivable improvements in the underlying fabrication process, the algorithm predicts that the 1 mm pitch of the current PCA prototypes could be reduced significantly, potentially to between ∼240 and 290 μm. (paper)

  11. Hollow silicon microneedle array based trans-epidermal antiemetic patch for efficient management of chemotherapy induced nausea and vomiting

    Science.gov (United States)

    Kharbikar, Bhushan N.; Kumar S., Harish; Kr., Sindhu; Srivastava, Rohit

    2015-12-01

    Chemotherapy Induced Nausea and Vomiting (CINV) is a serious health concern in the treatment of cancer patients. Conventional routes for administering anti-emetics (i.e. oral and parenteral) have several drawbacks such as painful injections, poor patient compliance, dependence on skilled personnel, non-affordability to majority of population (parenteral), lack of programmability and suboptimal bioavailability (oral). Hence, we have developed a trans-epidermal antiemetic drug delivery patch using out-of-plane hollow silicon microneedle array. Microneedles are pointed micron-scale structures that pierce the epidermal layer of skin to reach dermal blood vessels and can directly release the drug in their vicinity. They are painless by virtue of avoiding significant contact with dermal sensory nerve endings. This alternate approach gives same pharmacodynamic effects as par- enteral route at a sparse drug-dose requirement, hence negligible side-effects and improved patient compliance. Microneedle design attributes were derived by systematic study of human skin anatomy, natural micron-size structures like wasp-sting and cactus-spine and multi-physics simulations. We used deep reactive ion etching with Bosch process and optimized recipe of gases to fabricate high-aspect-ratio hollow silicon microneedle array. Finally, microneedle array and polydimethylsiloxane drug reservoir were assembled to make finished anti-emetic patch. We assessed microneedles mechanical stability, physico-chemical properties and performed in-vitro, ex- vivo and in-vivo studies. These studies established functional efficacy of the device in trans-epidermal delivery of anti-emetics, its programmability, ease of use and biosafety. Thus, out-of-plane hollow silicon microneedle array trans-epidermal antiemetic patch is a promising strategy for painless and effective management of CINV at low cost in mainstream healthcare.

  12. 75 MeV boron ion irradiation studies on Si PIN photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

    2013-12-01

    The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

  13. SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

    International Nuclear Information System (INIS)

    Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M; Menichelli, D; Friedl, F

    2014-01-01

    Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam

  14. SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

    Energy Technology Data Exchange (ETDEWEB)

    Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M [University of Florence, Firenze (Italy); Menichelli, D; Friedl, F [IBA Dosimetry, Schwarzenbruck, Bavaria (Germany)

    2014-06-01

    Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam.

  15. Build-up of the silicon micro-strip detector array in ETF of HIRFL-CSR

    International Nuclear Information System (INIS)

    Wang Pengfei; Li Zhankui; Li Haixia

    2014-01-01

    Silicon micro-strip detectors have been widely used in the world-famous nuclear physics laboratories due to their better position resolution and energy resolution. Double-sided silicon micro-strip detectors with a position resolution of 0.5 mm × 0.5 mm, have been fabricated in the IMP (Institute of Modern Physics, CAS) by using microelectronics technology. These detectors have been used in the ETF (External Target Facility) of HIRFL-CSR, as ΔE detectors of the ΔE-E telescope system and the track detectors. With the help of flexibility printed circuit board (FPCB) and the integrated ASIC chips, a compact multi-channel front-end electronic board has been designed to fulfill the acquisition of the energy and position information of the Silicon micro-strip detectors. It is described in this paper that the build-up of the Silicon micro-strip detector array in ETF of HIRFL-CSR, the determination of the energy resolution of the detector units, and the energy resolution of approximately 1% obtained for 5∼9 MeV α particles in vacuum. (authors)

  16. Static and dynamic characterization of robust superhydrophobic surfaces built from nano-flowers on silicon micro-post arrays

    KAUST Repository

    Chen, Longquan

    2010-09-01

    Superhydrophobic nano-flower surfaces were fabricated using MEMS technology and microwave plasma-enhanced chemical vapor deposition (MPCVD) of carbon nanotubes on silicon micro-post array surfaces. The nano-flower structures can be readily formed within 1-2 min on the micro-post arrays with the spacing ranging from 25 to 30 μm. The petals of the nano-flowers consisted of clusters of multi-wall carbon nanotubes. Patterned nano-flower structures were characterized using various microscopy techniques. After MPCVD, the apparent contact angle (160 ± 0.2°), abbreviated as ACA (defined as the measured angle between the apparent solid surface and the tangent to the liquid-fluid interface), of the nano-flower surfaces increased by 139% compared with that of the silicon micro-post arrays. The measured ACA of the nano-flower surface is consistent with the predicted ACA from a modified Cassie-Baxter equation. A high-speed CCD camera was used to study droplet impact dynamics on various micro/nanostructured surfaces. Both static testing (ACA and sliding angle) and droplet impact dynamics demonstrated that, among seven different micro/nanostructured surfaces, the nano-flower surfaces are the most robust superhydrophobic surfaces. © 2010 IOP Publishing Ltd.

  17. Static and dynamic characterization of robust superhydrophobic surfaces built from nano-flowers on silicon micro-post arrays

    KAUST Repository

    Chen, Longquan; Xiao, Zhiyong; Chan, Philip C H; Lee, Yi-Kuen

    2010-01-01

    Superhydrophobic nano-flower surfaces were fabricated using MEMS technology and microwave plasma-enhanced chemical vapor deposition (MPCVD) of carbon nanotubes on silicon micro-post array surfaces. The nano-flower structures can be readily formed within 1-2 min on the micro-post arrays with the spacing ranging from 25 to 30 μm. The petals of the nano-flowers consisted of clusters of multi-wall carbon nanotubes. Patterned nano-flower structures were characterized using various microscopy techniques. After MPCVD, the apparent contact angle (160 ± 0.2°), abbreviated as ACA (defined as the measured angle between the apparent solid surface and the tangent to the liquid-fluid interface), of the nano-flower surfaces increased by 139% compared with that of the silicon micro-post arrays. The measured ACA of the nano-flower surface is consistent with the predicted ACA from a modified Cassie-Baxter equation. A high-speed CCD camera was used to study droplet impact dynamics on various micro/nanostructured surfaces. Both static testing (ACA and sliding angle) and droplet impact dynamics demonstrated that, among seven different micro/nanostructured surfaces, the nano-flower surfaces are the most robust superhydrophobic surfaces. © 2010 IOP Publishing Ltd.

  18. Core-shell heterojunction of silicon nanowire arrays and carbon quantum dots for photovoltaic devices and self-driven photodetectors.

    Science.gov (United States)

    Xie, Chao; Nie, Biao; Zeng, Longhui; Liang, Feng-Xia; Wang, Ming-Zheng; Luo, Linbao; Feng, Mei; Yu, Yongqiang; Wu, Chun-Yan; Wu, Yucheng; Yu, Shu-Hong

    2014-04-22

    Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.

  19. High speed photodiodes in standard nanometer scale CMOS technology: a comparative study.

    Science.gov (United States)

    Nakhkoob, Behrooz; Ray, Sagar; Hella, Mona M

    2012-05-07

    This paper compares various techniques for improving the frequency response of silicon photodiodes fabricated in mainstream CMOS technology for fully integrated optical receivers. The three presented photodiodes, Spatially Modulated Light detectors, Double, and Interrupted P-Finger photodiodes, aim at reducing the low speed diffusive component of the photo generated current. For the first photodiode, Spatially Modulated Light (SML) detectors, the low speed current component is canceled out by converting it to a common mode current driving a differential transimpedance amplifier. The Double Photodiode (DP) uses two depletion regions to increase the fast drift component, while the Interrupted-P Finger Photodiode (IPFPD) redirects the low speed component towards a different contact from the main fast terminal of the photodiode. Extensive device simulations using 130 nm CMOS technology-parameters are presented to compare their performance using the same technological platform. Finally a new type of photodiode that uses triple well CMOS technology is introduced that can achieve a bandwidth of roughly 10 GHz without any process modification or high reverse bias voltages that would jeopardize the photodetector and subsequent transimpedance amplifier reliability.

  20. Proceedings of the Flat-Plate Solar Array Project Workshop on Crystal Gowth for High-Efficiency Silicon Solar Cells

    Science.gov (United States)

    Dumas, K. A. (Editor)

    1985-01-01

    A Workshop on Crystal Growth for High-Efficiency Silicon Solar Cells was held December 3 and 4, 1984, in San Diego, California. The Workshop offered a day and a half of technical presentations and discussions and an afternoon session that involved a panel discussion and general discussion of areas of research that are necessary to the development of materials for high-efficiency solar cells. Topics included the theoretical and experimental aspects of growing high-quality silicon crystals, the effects of growth-process-related defects on photovoltaic devices, and the suitability of various growth technologies as cost-effective processes. Fifteen invited papers were presented, with a discussion period following each presentation. The meeting was organized by the Flat-Plate Solar Array Project of the Jet Propulsion Laboratory. These Proceedings are a record of the presentations and discussions, edited for clarity and continuity.

  1. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    International Nuclear Information System (INIS)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

    2014-01-01

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles

  2. Development of a process for high capacity arc heater production of silicon for solar arrays

    Science.gov (United States)

    Meyer, T. N.

    1980-01-01

    A high temperature silicon production process using existing electric arc heater technology is discussed. Silicon tetrachloride and a reductant, liquid sodium, were injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction occurred, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon were developed. The desired degree of separation was not achieved. The electrical, control and instrumentation, cooling water, gas, SiCl4, and sodium systems are discussed. The plasma reactor, silicon collection, effluent disposal, the gas burnoff stack, and decontamination and safety are also discussed. Procedure manuals, shakedown testing, data acquisition and analysis, product characterization, disassembly and decontamination, and component evaluation are reviewed.

  3. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin, E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

    2014-11-10

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

  4. Reduction of Cr(VI) to Cr(III) using silicon nanowire arrays under visible light irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Fellahi, Ouarda [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique-CRTSE 02, Bd Frantz Fanon, BP. 140, Alger 7 Merveilles (Algeria); Barras, Alexandre [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Pan, Guo-Hui [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nanhu Road, Changchun 130033 (China); Coffinier, Yannick [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Hadjersi, Toufik [Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique-CRTSE 02, Bd Frantz Fanon, BP. 140, Alger 7 Merveilles (Algeria); Maamache, Mustapha [Laboratoire de Physique Quantique et Systèmes Dynamiques, Département de Physique, Université de Sétif, Sétif 19000 (Algeria); Szunerits, Sabine [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); and others

    2016-03-05

    Highlights: • Cr(VI) reduction to Cr(III) using silicon nanowires decorated with Cu nanoparticles. • The reduction takes place at room temperature and neutral pH under visible light. • The photocatalytic reduction was enhanced by addition of adipic or citric acid. - Abstract: We report an efficient visible light-induced reduction of hexavalent chromium Cr(VI) to trivalent Cr(III) by direct illumination of an aqueous solution of potassium dichromate (K{sub 2}Cr{sub 2}O{sub 7}) in the presence of hydrogenated silicon nanowires (H-SiNWs) or silicon nanowires decorated with copper nanoparticles (Cu NPs-SiNWs) as photocatalyst. The SiNW arrays investigated in this study were prepared by chemical etching of crystalline silicon in HF/AgNO{sub 3} aqueous solution. The Cu NPs were deposited on SiNW arrays via electroless deposition technique. Visible light irradiation of an aqueous solution of K{sub 2}Cr{sub 2}O{sub 7} (10{sup −4} M) in presence of H-SiNWs showed that these substrates were not efficient for Cr(VI) reduction. The reduction efficiency achieved was less than 10% after 120 min irradiation at λ > 420 nm. Addition of organic acids such as citric or adipic acid in the solution accelerated Cr(VI) reduction in a concentration-dependent manner. Interestingly, Cu NPs-SiNWs was found to be a very efficient interface for the reduction of Cr(VI) to Cr(III) in absence of organic acids. Almost a full reduction of Cr(VI) was achieved by direct visible light irradiation for 140 min using this photocatalyst.

  5. Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

    Science.gov (United States)

    Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

    2010-01-01

    The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

  6. SERS activity of Au nanoparticles coated on an array of carbon nanotube nested into silicon nanoporous pillar

    International Nuclear Information System (INIS)

    Jiang Weifen; Zhang Yanfeng; Wang Yusheng; Xu Lei; Li Xinjian

    2011-01-01

    A novel composite structure, Au nanoparticles coated on a nest-shaped array of carbon nanotube nested into a silicon nanoporous pillar array (Au/NACNT/Si-NPA), was fabricated for surface-enhanced Raman scattering (SERS). The morphology of the Au/NACNT/Si-NPA composite structure was characterized with the aid of scanning electron microscopy, X-ray diffraction instrumentation and Transmission electron microscopy. Compared with SERS of rhodamine 6G (R6G) adsorbed on SERS-active Au substrate reported, the SERS signals of R6G adsorbed on these gold nanoparticles were obviously improved. This was attributed to the enlarged specific surface area for adsorption of target molecules brought by the nest-shaped CNTs structure.

  7. Development of a Process for a High Capacity Arc Heater Production of Silicon for Solar Arrays

    Science.gov (United States)

    Reed, W. H.

    1979-01-01

    A program was established to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant (sodium) are injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection were developed. Included in this report are: test system preparation; testing; injection techniques; kinetics; reaction demonstration; conclusions; and the project status.

  8. Low cost solar array project silicon materials task. Development of a process for high capacity arc heater production of silicon for solar arrays

    Science.gov (United States)

    Fey, M. G.

    1981-01-01

    The experimental verification system for the production of silicon via the arc heater-sodium reduction of SiCl4 was designed, fabricated, installed, and operated. Each of the attendant subsystems was checked out and operated to insure performance requirements. These subsystems included: the arc heaters/reactor, cooling water system, gas system, power system, Control & Instrumentation system, Na injection system, SiCl4 injection system, effluent disposal system and gas burnoff system. Prior to introducing the reactants (Na and SiCl4) to the arc heater/reactor, a series of gas only-power tests was conducted to establish the operating parameters of the three arc heaters of the system. Following the successful completion of the gas only-power tests and the readiness tests of the sodium and SiCl4 injection systems, a shakedown test of the complete experimental verification system was conducted.

  9. Novel method of separating macroporous arrays from p-type silicon substrate

    International Nuclear Information System (INIS)

    Peng Bobo; Wang Fei; Liu Tao; Yang Zhenya; Wang Lianwei; Fu, Ricky K. Y.; Chu, Paul K.

    2012-01-01

    This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 100 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed. (semiconductor materials)

  10. Evaluation of gamma dose effect on PIN photodiode using analytical model

    Science.gov (United States)

    Jafari, H.; Feghhi, S. A. H.; Boorboor, S.

    2018-03-01

    The PIN silicon photodiodes are widely used in the applications which may be found in radiation environment such as space mission, medical imaging and non-destructive testing. Radiation-induced damage in these devices causes to degrade the photodiode parameters. In this work, we have used new approach to evaluate gamma dose effects on a commercial PIN photodiode (BPX65) based on an analytical model. In this approach, the NIEL parameter has been calculated for gamma rays from a 60Co source by GEANT4. The radiation damage mechanisms have been considered by solving numerically the Poisson and continuity equations with the appropriate boundary conditions, parameters and physical models. Defects caused by radiation in silicon have been formulated in terms of the damage coefficient for the minority carriers' lifetime. The gamma induced degradation parameters of the silicon PIN photodiode have been analyzed in detail and the results were compared with experimental measurements and as well as the results of ATLAS semiconductor simulator to verify and parameterize the analytical model calculations. The results showed reasonable agreement between them for BPX65 silicon photodiode irradiated by 60Co gamma source at total doses up to 5 kGy under different reverse voltages.

  11. Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

    International Nuclear Information System (INIS)

    Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

    2002-01-01

    Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a ∼10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38

  12. Low-temperature growth of well-aligned zinc oxide nanorod arrays on silicon substrate and their photocatalytic application

    Directory of Open Access Journals (Sweden)

    Azam A

    2014-04-01

    Full Text Available Ameer Azam,1 Saeed Salem Babkair21Center of Nanotechnology, King Abdulaziz University, Jeddah, Saudi Arabia; 2Center of Nanotechnology, Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi ArabiaAbstract: Well-aligned and single-crystalline zinc oxide (ZnO nanorod arrays were grown on silicon (Si substrate using a wet chemical route for the photodegradation of organic dyes. Structural analysis using X-ray diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction confirmed the formation of ZnO nanorods grown preferentially oriented in the (001 direction and with a single phase nature with a wurtzite structure. Field emission scanning electron microscopy and transmission electron microscopy micrographs showed that the length and diameter of the well-aligned rods were about ~350–400 nm and ~80–90 nm, respectively. Raman scattering spectra of ZnO nanorod arrays revealed the characteristic E2 (high mode that is related to the vibration of oxygen atoms in the wurtzite ZnO. The photodegradation of methylene blue (MB using ZnO nanorod arrays was performed under ultraviolet light irradiation. The results of photodegradation showed that ZnO nanorod arrays were capable of degrading ~80% of MB within 60 minutes of irradiation, whereas ~92% of degradation was achieved in 120 minutes. Complete degradation of MB was observed after 270 minutes of irradiation time. Owing to enhanced photocatalytic degradation efficiency and low-temperature growth method, prepared ZnO nanorod arrays may open up the possibility for the successful utilization of ZnO nanorod arrays as a future photocatalyst for environmental remediation.Keywords: ZnO, nanorods, XRD, photodegradation

  13. Detection of charged particles through a photodiode: design and analysis; Deteccion de particulas cargadas mediante un fotodiodo: diseno y analisis

    Energy Technology Data Exchange (ETDEWEB)

    Angoli, A.; Quirino, L.L.; Hernandez, V.M.; Lopez del R, H.; Mireles, F.; Davila, J.I.; Rios, C.; Pinedo, J.L. [UAEN, UAZ, 98000 Zacatecas (Mexico)]. e-mail: toono4@hotmail.com

    2006-07-01

    This project develops and construct an charge particle detector mean a pin photodiode array, design and analysis using a silicon pin Fotodiodo that generally is used to detect visible light, its good efficiency, size compact and reduced cost specifically allows to its use in the radiation monitoring and alpha particle detection. Here, so much, appears the design of the system of detection like its characterization for alpha particles where one is reported as alpha energy resolution and detection efficiency. The equipment used in the development of work consists of alpha particle a triple source composed of Am-241, Pu-239 and Cm-244 with 5,55 KBq as total activity, Maestro 32 software made by ORTEC, a multi-channel card Triumph from ORTEC and one low activity electroplated uranium sample. (Author)

  14. Performance of a monolithic LaBr{sub 3}:Ce crystal coupled to an array of silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Ulyanov, Alexei, E-mail: alexey.uliyanov@ucd.ie [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Morris, Oran [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Department of Computer Science & Applied Physics, Galway-Mayo Institute of Technology, Galway (Ireland); Hanlon, Lorraine; McBreen, Sheila; Foley, Suzanne; Roberts, Oliver J.; Tobin, Isaac; Murphy, David; Wade, Colin [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Nelms, Nick; Shortt, Brian [European Space Agency, ESTEC, 2200 AG Noordwijk (Netherlands); Slavicek, Tomas; Granja, Carlos; Solar, Michael [Institute of Experimental and Applied Physics, Czech Technical University in Prague, 12800 Prague 2 (Czech Republic)

    2016-02-21

    A gamma-ray detector composed of a single 28×28×20 mm{sup 3} LaBr{sub 3}:Ce crystal coupled to a custom built 4×4 array of silicon photomultipliers was tested over an energy range of 30 keV to 9.3 MeV. The silicon photomultipliers were initially calibrated using 20 ns light pulses generated by a light emitting diode. The photodetector responses measured as a function of the number of incident photons were found to be non-linear and consistent with model predictions. Using corrections for the non-linearity of the silicon photomultipliers, the detector showed a linear response to gamma-rays with energies from 100 keV to the maximum available energy of 9.3 MeV. The energy resolution was found to be 4% FWHM at 662 keV. Despite the large thickness of the scintillator (20 mm) and a 5 mm thick optical window, the detector was capable of measuring the positions of the gamma-ray interaction points. The position resolution was measured at 356 keV and was found to be 8 mm FWHM in the detector plane and 11 mm FWHM for the depth of interaction. The detector can be used as a building block of a larger calorimeter system that is capable of measuring gamma-ray energies up to tens of MeV.

  15. Development of advanced methods for continuous Czochralski growth. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

    Science.gov (United States)

    Wolfson, R. G.; Sibley, C. B.

    1978-01-01

    The three components required to modify the furnace for batch and continuous recharging with granular silicon were designed. The feasibility of extended growth cycles up to 40 hours long was demonstrated by a recharge simulation experiment; a 6 inch diameter crystal was pulled from a 20 kg charge, remelted, and pulled again for a total of four growth cycles, 59-1/8 inch of body length, and approximately 65 kg of calculated mass.

  16. Proof-of-concept and feasibility demonstrations for an avalanche photodiode/photoelastic modulator-based imaging polarimeter

    Data.gov (United States)

    National Aeronautics and Space Administration — Building on the successful heritage of JPL’s Multiangle SpectroPolarimetric Imager (MSPI), we propose infusing HgCdTe avalanche photodiode (APD) array technology...

  17. 26+ Year Old Photovoltaic Power Plant: Degradation and Reliability Evaluation of Crystalline Silicon Modules -- South Array

    Science.gov (United States)

    Olakonu, Kolapo

    As the use of photovoltaic (PV) modules in large power plants continues to increase globally, more studies on degradation, reliability, failure modes, and mechanisms of field aged modules are needed to predict module life expectancy based on accelerated lifetime testing of PV modules. In this work, a 26+ year old PV power plant in Phoenix, Arizona has been evaluated for performance, reliability, and durability. The PV power plant, called Solar One, is owned and operated by John F. Long's homeowners association. It is a 200 kW dc, standard test conditions (STC) rated power plant comprised of 4000 PV modules or frameless laminates, in 100 panel groups (rated at 175 kW ac). The power plant is made of two center-tapped bipolar arrays, the north array and the south array. Due to a limited time frame to execute this large project, this work was performed by two masters students (Jonathan Belmont and Kolapo Olakonu) and the test results are presented in two masters theses. This thesis presents the results obtained on the south array and the other thesis presents the results obtained on the north array. Each of these two arrays is made of four sub arrays, the east sub arrays (positive and negative polarities) and the west sub arrays (positive and negative polarities), making up eight sub arrays. The evaluation and analyses of the power plant included in this thesis consists of: visual inspection, electrical performance measurements, and infrared thermography. A possible presence of potential induced degradation (PID) due to potential difference between ground and strings was also investigated. Some installation practices were also studied and found to contribute to the power loss observed in this investigation. The power output measured in 2011 for all eight sub arrays at STC is approximately 76 kWdc and represents a power loss of 62% (from 200 kW to 76 kW) over 26+ years. The 2011 measured power output for the four south sub arrays at STC is 39 kWdc and represents a power

  18. Low-energy nuclear physics with high-segmentation silicon arrays

    International Nuclear Information System (INIS)

    Betts, R.R.; Univ. of Illinois, Chicago, IL

    1994-01-01

    A brief history is given of silicon detectors leading up to the development of ion-implanted strip detectors. Two examples of their use in low energy nuclear physics are discussed; the search for exotic alpha-chain states in 24 Mg and studies of anomalous positron-electron pairs produced in collisions of very heavy ions

  19. Fabrication and doping methods for silicon nano- and micropillar arrays for solar cell applications: a review

    NARCIS (Netherlands)

    Elbersen, R.; Vijselaar, Wouter Jan, Cornelis; Tiggelaar, Roald M.; Gardeniers, Johannes G.E.; Huskens, Jurriaan

    2015-01-01

    Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p/n junctions. High

  20. Design of photonic phased array switches using nano electromechanical systems on silicon-on-insulator integration platform

    Science.gov (United States)

    Hussein, Ali Abdulsattar

    This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2x2 up to 8x8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0°-180° capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased

  1. Superparamagnetic iron oxide nanoparticle attachment on array of micro test tubes and microbeakers formed on p-type silicon substrate for biosensor applications

    Directory of Open Access Journals (Sweden)

    Raja Sufi

    2011-01-01

    Full Text Available Abstract A uniformly distributed array of micro test tubes and microbeakers is formed on a p-type silicon substrate with tunable cross-section and distance of separation by anodic etching of the silicon wafer in N, N-dimethylformamide and hydrofluoric acid, which essentially leads to the formation of macroporous silicon templates. A reasonable control over the dimensions of the structures could be achieved by tailoring the formation parameters, primarily the wafer resistivity. For a micro test tube, the cross-section (i.e., the pore size as well as the distance of separation between two adjacent test tubes (i.e., inter-pore distance is typically approximately 1 μm, whereas, for a microbeaker the pore size exceeds 1.5 μm and the inter-pore distance could be less than 100 nm. We successfully synthesized superparamagnetic iron oxide nanoparticles (SPIONs, with average particle size approximately 20 nm and attached them on the porous silicon chip surface as well as on the pore walls. Such SPION-coated arrays of micro test tubes and microbeakers are potential candidates for biosensors because of the biocompatibility of both silicon and SPIONs. As acquisition of data via microarray is an essential attribute of high throughput bio-sensing, the proposed nanostructured array may be a promising step in this direction.

  2. Progress report on the use of hybrid silicon pin diode arrays in high energy physics

    International Nuclear Information System (INIS)

    Shapiro, S.L.; Jernigan, J.G.; Arens, J.F.

    1990-05-01

    We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump-bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format has 10 x 64 pixels, each 120 μm square; and the other format has 256 x 156 pixels, each 30 μm square. In both cases, the thickness of the PIN diode layer is 300 μm. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 17 figs

  3. Charge-partitioning study of a wide-pitch silicon micro-strip detector with a 64-channel CMOS preamplifier array

    International Nuclear Information System (INIS)

    Ikeda, H.; Tsuboyama, T.; Okuno, S.; Saitoh, Y.; Akamine, T.; Satoh, K.; Inoue, M.; Yamanaka, J.; Mandai, M.; Takeuchi, H.; Kitta, T.; Miyahara, S.; Kamiya, M.

    1996-01-01

    The wider pitch readout operation of a 50 μm-pitch double-sided silicon micro-strip detector has been studied specifically concerning its ohmic side. Every second readout and ganged configuration was examined by employing a newly developed 64-channel preamplifier array. The observed charge responses for collimated IR light were compared with a numerical model. (orig.)

  4. Process Research On Polycrystalline Silicon Material (PROPSM). [flat plate solar array project

    Science.gov (United States)

    Culik, J. S.

    1983-01-01

    The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

  5. Minimizing Isolate Catalyst Motion in Metal-Assisted Chemical Etching for Deep Trenching of Silicon Nanohole Array.

    Science.gov (United States)

    Kong, Lingyu; Zhao, Yunshan; Dasgupta, Binayak; Ren, Yi; Hippalgaonkar, Kedar; Li, Xiuling; Chim, Wai Kin; Chiam, Sing Yang

    2017-06-21

    The instability of isolate catalysts during metal-assisted chemical etching is a major hindrance to achieve high aspect ratio structures in the vertical and directional etching of silicon (Si). In this work, we discussed and showed how isolate catalyst motion can be influenced and controlled by the semiconductor doping type and the oxidant concentration ratio. We propose that the triggering event in deviating isolate catalyst motion is brought about by unequal etch rates across the isolate catalyst. This triggering event is indirectly affected by the oxidant concentration ratio through the etching rates. While the triggering events are stochastic, the doping concentration of silicon offers a good control in minimizing isolate catalyst motion. The doping concentration affects the porosity at the etching front, and this directly affects the van der Waals (vdWs) forces between the metal catalyst and Si during etching. A reduction in the vdWs forces resulted in a lower bending torque that can prevent the straying of the isolate catalyst from its directional etching, in the event of unequal etch rates. The key understandings in isolate catalyst motion derived from this work allowed us to demonstrate the fabrication of large area and uniformly ordered sub-500 nm nanoholes array with an unprecedented high aspect ratio of ∼12.

  6. Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography

    Science.gov (United States)

    Lim, Cheol-Min; Lee, In-Kyu; Lee, Ki Joong; Oh, Young Kyoung; Shin, Yong-Beom; Cho, Won-Ju

    2017-12-01

    This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.

  7. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    KAUST Repository

    Zhai, Yujia; Palard, Marylene; Mathew, Leo; Hussain, Muhammad Mustafa; Willson, Grant Grant; Tutuc, Emanuel; Banerjee, Sanjay Kumar

    2012-01-01

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  8. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    KAUST Repository

    Zhai, Yujia

    2012-11-26

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  9. Corporate array of micromachined dipoles on silicon wafer for 60 GHz communication systems

    KAUST Repository

    Sallam, M. O.; Soliman, E. A.

    2013-01-01

    the antenna array and its feeding network is achieved via a ground plane. This arrangement leads to maximizing the broadside radiation with relatively high front-to-back ratio. Simulations have been carried out using both HFSS and CST, which showed very good

  10. Measurement of X-ray spectra by PIN photodiode: comparative study

    International Nuclear Information System (INIS)

    Costa, Paulo R.; Furquim, Tania A.C.; Herdade, Silvio B.

    1996-01-01

    Two different approaches for the evaluation of diagnostic X-ray spectra are presented : one based on a semiempirical model and other based on measurements using a silicon PIN photodiode. Measured and calculated values using typical kVp and filter combinations are compared

  11. The Texas-Edinburgh-Catania Silicon Array (TECSA): A detector for nuclear astrophysics and nuclear structure studies with rare isotope beams

    Energy Technology Data Exchange (ETDEWEB)

    Roeder, B.T., E-mail: broeder@comp.tamu.ed [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); McCleskey, M.; Trache, L.; Alharbi, A.A.; Banu, A. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Cherubini, S. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Universita di Catania, I95123 Catania (Italy); Davinson, T. [University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom); Goldberg, V.Z. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Gulino, M. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Universita di Catania, I95123 Catania (Italy); Pizzone, R.G. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Simmons, E. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Sparta, R. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Spiridon, A. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Spitaleri, C. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Universita di Catania, I95123 Catania (Italy); Wallace, J.P. [University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom); Tribble, R.E. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Woods, P.J. [University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom)

    2011-04-01

    We present the details of the construction and commissioning of the Texas-Edinburgh-Catania Silicon Array (TECSA). TECSA is composed of up to 16 Micron Semiconductor Ltd. type-YY1 silicon strip detectors and associated electronics, which is designed for use in studies of nuclear astrophysics and nuclear structure with rare isotope beams. TECSA was assembled at the Texas A and M University Cyclotron Institute and will be housed there for the next few years. The array was commissioned in a recent experiment where the d({sup 14}C,p){sup 15}C reaction at 11.7 MeV/u was measured in inverse kinematics. The results of the measurement and a discussion of the future use of this array are presented.

  12. The Texas-Edinburgh-Catania Silicon Array (TECSA): A detector for nuclear astrophysics and nuclear structure studies with rare isotope beams

    International Nuclear Information System (INIS)

    Roeder, B.T.; McCleskey, M.; Trache, L.; Alharbi, A.A.; Banu, A.; Cherubini, S.; Davinson, T.; Goldberg, V.Z.; Gulino, M.; Pizzone, R.G.; Simmons, E.; Sparta, R.; Spiridon, A.; Spitaleri, C.; Wallace, J.P.; Tribble, R.E.; Woods, P.J.

    2011-01-01

    We present the details of the construction and commissioning of the Texas-Edinburgh-Catania Silicon Array (TECSA). TECSA is composed of up to 16 Micron Semiconductor Ltd. type-YY1 silicon strip detectors and associated electronics, which is designed for use in studies of nuclear astrophysics and nuclear structure with rare isotope beams. TECSA was assembled at the Texas A and M University Cyclotron Institute and will be housed there for the next few years. The array was commissioned in a recent experiment where the d( 14 C,p) 15 C reaction at 11.7 MeV/u was measured in inverse kinematics. The results of the measurement and a discussion of the future use of this array are presented.

  13. Fabrication process for CMUT arrays with polysilicon electrodes, nanometre precision cavity gaps and through-silicon vias

    International Nuclear Information System (INIS)

    Due-Hansen, J; Poppe, E; Summanwar, A; Jensen, G U; Breivik, L; Wang, D T; Schjølberg-Henriksen, K; Midtbø, K

    2012-01-01

    Capacitive micromachined ultrasound transducers (CMUTs) can be used to realize miniature ultrasound probes. Through-silicon vias (TSVs) allow for close integration of the CMUT and read-out electronics. A fabrication process enabling the realization of a CMUT array with TSVs is being developed. The integrated process requires the formation of highly doped polysilicon electrodes with low surface roughness. A process for polysilicon film deposition, doping, CMP, RIE and thermal annealing that resulted in a film with sheet resistance of 4.0 Ω/□ and a surface roughness of 1 nm rms has been developed. The surface roughness of the polysilicon film was found to increase with higher phosphorus concentrations. The surface roughness also increased when oxygen was present in the thermal annealing ambient. The RIE process for etching CMUT cavities in the doped polysilicon gave a mean etch depth of 59.2 ± 3.9 nm and a uniformity across the wafer ranging from 1.0 to 4.7%. The two presented processes are key processes that enable the fabrication of CMUT arrays suitable for applications in for instance intravascular cardiology and gastrointestinal imaging. (paper)

  14. Photoelectric Properties of Silicon Nanocrystals/P3HT Bulk-Heterojunction Ordered in Titanium Dioxide Nanotube Arrays

    Directory of Open Access Journals (Sweden)

    Švrček Vladimir

    2009-01-01

    Full Text Available Abstract A silicon nanocrystals (Si-ncs conjugated-polymer-based bulk-heterojunction represents a promising approach for low-cost hybrid solar cells. In this contribution, the bulk-heterojunction is based on Si-ncs prepared by electrochemical etching and poly(3-hexylthiophene (P3HT polymer. Photoelectric properties in parallel and vertical device-like configuration were investigated. Electronic interaction between the polymer and surfactant-free Si-ncs is achieved. Temperature-dependent photoluminescence and transport properties were studied and the ratio between the photo- and dark-conductivity of 1.7 was achieved at ambient conditions. Furthermore the porous titanium dioxide (TiO2 nanotubes’ template was used for vertical order of photosensitive Si-ncs/P3HT-based blend. The anodization of titanium foil in ethylene glycol-based electrolyte containing fluoride ions and subsequent thermal annealing were used to prepare anatase TiO2nanotube arrays. The arrays with nanotube inner diameter of 90 and 50 nm were used for vertical ordering of the Si-ncs/P3HT bulk-heterojunction.

  15. Electrochemical detection of dopamine using arrays of liquid-liquid micro-interfaces created within micromachined silicon membranes

    International Nuclear Information System (INIS)

    Berduque, Alfonso; Zazpe, Raul; Arrigan, Damien W.M.

    2008-01-01

    The detection of protonated dopamine by differential pulse voltammetry (DPV) and square wave voltammetry (SWV) at arrays of micro-interfaces between two immiscible electrolyte solutions (μITIES) is presented. Microfabricated porous silicon membranes (consisting of eight pores, 26.6 μm in radius and 500 μm pore-pore separation, in a hexagonal layout) were prepared by photolithographic and etching procedures. The membrane pores were fabricated with hydrophobic internal walls so that the organic phase filled the pores and created the liquid interface at the aqueous side of the membrane. These were used for harnessing the benefits of three-dimensional diffusion to the interface and for interface stabilisation. The liquid-liquid interface provides a simple method to overcome the major problem in the voltammetric detection of dopamine at solid electrodes due to the co-existence of ascorbate at higher concentrations. Selectivity for dopamine over ascorbate was achieved by the use of dibenzo-18-crown-6 (DB18C6) for the facilitated ion transfer of dopamine across the μITIES array. Under these conditions, the presence of ascorbate in excess did not interfere in the detection of dopamine and the lowest concentration detectable was ca. 0.5 μM. In addition, the drawback of current signal saturation (non-linear increase of the peak current with the concentration of dopamine) observed at conventional (millimetre-sized) liquid-liquid interfaces was overcome using the microfabricated porous membranes

  16. Microchannel-connected SU-8 honeycombs by single-step projection photolithography for positioning cells on silicon oxide nanopillar arrays

    International Nuclear Information System (INIS)

    Larramendy, Florian; Paul, Oliver; Blatche, Marie Charline; Mazenq, Laurent; Laborde, Adrian; Temple-Boyer, Pierre

    2015-01-01

    We report on the fabrication, functionalization and testing of SU-8 microstructures for cell culture and positioning over large areas. The microstructure consists of a honeycomb arrangement of cell containers interconnected by microchannels and centered on nanopillar arrays designed for promoting cell positioning. The containers have been dimensioned to trap single cells and, with a height of 50 µm, prevent cells from escaping. The structures are fabricated using a single ultraviolet photolithography exposure with focus depth in the lower part of the SU-8 resist. With optimized process parameters, microchannels of various aspect ratios are thus produced. The cell containers and microchannels serve for the organization of axonal growth between neurons. The roughly 2 µm-high and 500 nm-wide nanopillars are made of silicon oxide structured by deep reactive ion etching. In future work, beyond their cell positioning purpose, the nanopillars could be functionalized as sensors. The proof of concept of the novel microstructure for organized cell culture is given by the successful growth of interconnected PC12 cells. Promoted by the honeycomb geometry, a dense network of interconnections between the cells has formed and the intended intimate contact of cells with the nanopillar arrays was observed by scanning electron microscopy. This proves the potential of these new devices as tools for the controlled cell growth in an interconnected container system with well-defined 3D geometry. (paper)

  17. Multiplexed evaluation of capture agent binding kinetics using arrays of silicon photonic microring resonators.

    Science.gov (United States)

    Byeon, Ji-Yeon; Bailey, Ryan C

    2011-09-07

    High affinity capture agents recognizing biomolecular targets are essential in the performance of many proteomic detection methods. Herein, we report the application of a label-free silicon photonic biomolecular analysis platform for simultaneously determining kinetic association and dissociation constants for two representative protein capture agents: a thrombin-binding DNA aptamer and an anti-thrombin monoclonal antibody. The scalability and inherent multiplexing capability of the technology make it an attractive platform for simultaneously evaluating the binding characteristics of multiple capture agents recognizing the same target antigen, and thus a tool complementary to emerging high-throughput capture agent generation strategies.

  18. TU-FG-209-03: Exploring the Maximum Count Rate Capabilities of Photon Counting Arrays Based On Polycrystalline Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Liang, A K; Koniczek, M; Antonuk, L E; El-Mohri, Y; Zhao, Q [University of Michigan, Ann Arbor, MI (United States)

    2016-06-15

    Purpose: Photon counting arrays (PCAs) offer several advantages over conventional, fluence-integrating x-ray imagers, such as improved contrast by means of energy windowing. For that reason, we are exploring the feasibility and performance of PCA pixel circuitry based on polycrystalline silicon. This material, unlike the crystalline silicon commonly used in photon counting detectors, lends itself toward the economic manufacture of radiation tolerant, monolithic large area (e.g., ∼43×43 cm2) devices. In this presentation, exploration of maximum count rate, a critical performance parameter for such devices, is reported. Methods: Count rate performance for a variety of pixel circuit designs was explored through detailed circuit simulations over a wide range of parameters (including pixel pitch and operating conditions) with the additional goal of preserving good energy resolution. The count rate simulations assume input events corresponding to a 72 kVp x-ray spectrum with 20 mm Al filtration interacting with a CZT detector at various input flux rates. Output count rates are determined at various photon energy threshold levels, and the percentage of counts lost (e.g., due to deadtime or pile-up) is calculated from the ratio of output to input counts. The energy resolution simulations involve thermal and flicker noise originating from each circuit element in a design. Results: Circuit designs compatible with pixel pitches ranging from 250 to 1000 µm that allow count rates over a megacount per second per pixel appear feasible. Such rates are expected to be suitable for radiographic and fluoroscopic imaging. Results for the analog front-end circuitry of the pixels show that acceptable energy resolution can also be achieved. Conclusion: PCAs created using polycrystalline silicon have the potential to offer monolithic large-area detectors with count rate performance comparable to those of crystalline silicon detectors. Further improvement through detailed circuit

  19. Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

    Science.gov (United States)

    Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

    2017-06-26

    A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

  20. Operation and first results of the NEXT-DEMO prototype using a silicon photomultiplier tracking array

    International Nuclear Information System (INIS)

    Álvarez, V; Cárcel, S; Cervera, A; Díaz, J; Ferrario, P; Gil, A; Borges, F I G; Conde, C A N; Dias, T H V T; Fernandes, L M P; Freitas, E D C; Castel, J; Cebrián, S; Dafni, T; Egorov, M; Gehman, V M; Goldschmidt, A; Esteve, R; Evtoukhovitch, P; Ferreira, A L

    2013-01-01

    NEXT-DEMO is a high-pressure xenon gas TPC which acts as a technological test-bed and demonstrator for the NEXT-100 neutrinoless double beta decay experiment. In its current configuration the apparatus fully implements the NEXT-100 design concept. This is an asymmetric TPC, with an energy plane made of photomultipliers and a tracking plane made of silicon photomultipliers (SiPM) coated with TPB. The detector in this new configuration has been used to reconstruct the characteristic signature of electrons in dense gas, demonstrating the ability to identify the MIP and ''blob'' regions. Moreover, the SiPM tracking plane allows for the definition of a large fiducial region in which an excellent energy resolution of 1.82% FWHM at 511 keV has been measured (a value which extrapolates to 0.83% at the xenon Q ββ )

  1. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    International Nuclear Information System (INIS)

    Ji, J; Tay, F E H; Miao Jianmin; Sun Jianbo

    2006-01-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions

  2. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Ji, J [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Tay, F E H [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Miao Jianmin [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technologica l University, 50 Nanyang Avenue, 639798 (Singapore); Sun Jianbo [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technologica l University, 50 Nanyang Avenue, 639798 (Singapore)

    2006-04-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions.

  3. Study of a PIN photodiode as an ionizing radiation detector for aerospace use

    International Nuclear Information System (INIS)

    Nogueira, S.F.L.; Claro, L.H.; Santos, J.A.; Junior, J.R.; Federico, C.A.

    2017-01-01

    This work aims to study the use of the COTS PIN photodiode with an active area of 7.5 mm 2 as an ionizing radiation detector. The tests were performed with a 60 Co source and with low activity radioisotopic sources of 60 Co, 152 Eu, 137 Cs and 241 Am. The results were obtained by analyzing the current response generated by the photodiodes as a function of an attenuated dose rate in silicon in the range of 0.55 to 11.54 Gy / h

  4. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

    Science.gov (United States)

    DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

    2011-12-05

    We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

  5. Some n-p (Hg,Cd)Te photodiodes for 8-14 micrometer heterodyne applications

    Science.gov (United States)

    Shanley, J. F.; Flanagan, C. T.

    1980-01-01

    The results describing the dc and CO2 laser heterodyne characteristics of a three element photodiode array and single element and four element photodiode arrays are presented. The measured data shows that the n(+)-p configuration is capable of achieving bandwidths of 475 to 725 MHz and noise equivalent powers of 3.2 x 10 to the minus 20th power W/Hz at 77 K and 1.0 x 10 to the minus 19th power W/Hz at 145 K. The n(+)-n(-)-p photodiodes exhibited wide bandwidths (approximately 2.0 GHz) and fairly good effective heterodyne quantum efficiencies (approximately 13-30 percent at 2.0 GHz). Noise equivalent powers ranging from 1.44 x 10 to the minus 19th power W/Hz to 6.23 x 10 to the minus 20th power W/Hz were measured at 2.0 GHz.

  6. Germanium photodetectors fabricated on 300 mm silicon wafers for near-infrared focal plane arrays

    Science.gov (United States)

    Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Sood, Ashok K.

    2017-09-01

    SiGe p-i-n photodetectors have been fabricated on 300 mm (12") diameter silicon (Si) wafers utilizing high throughput, large-area complementary metal-oxide semiconductor (CMOS) technologies. These Ge photodetectors are designed to operate in room temperature environments without cooling, and thus have potential size and cost advantages over conventional cooled infrared detectors. The two-step fabrication process for the p-i-n photodetector devices, designed to minimize the formation of defects and threading dislocations, involves low temperature epitaxial growth of a thin p+ (boron) Ge seed/buffer layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) demonstrated uniform layer compositions with well defined layer interfaces and reduced dislocation density. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) was likewise employed to analyze the doping levels of the p+ and n+ layers. Current-voltage (I-V) measurements demonstrated that these SiGe photodetectors, when exposed to incident visible-NIR radiation, exhibited dark currents down below 1 μA and significant enhancement in photocurrent at -1 V. The zero-bias photocurrent was also relatively high, showing a minimal drop compared to that at -1 V bias.

  7. Non-lithographic method of forming ordered arrays of silicon pillars and macropores

    International Nuclear Information System (INIS)

    Mills, David; Kolasinski, Kurt W

    2005-01-01

    Micrometre-scale Si pillars are formed by chemically enhanced laser ablation using nanosecond excimer laser irradiation of a Si single crystal in the presence of SF 6 . We demonstrate the importance of precursor holes in determining the positioning of the pillars and show that we can control the initiation of precursor holes by ruling a grating into the Si substrate prior to irradiation. A rule defines an edge from which the laser light diffracts. Near-field amplification of the laser intensity enhances the formation of the precursor holes and aligns them parallel to the rule. The pillars can be thinned and eventually removed by wet chemical etching in aqueous KOH, resulting first in ordered arrays of extremely high aspect ratio pillars (e.g. tens of micrometres in length, with ∼ 10 nm tips) and then macropores. The shape of the macropore is determined by crystallography and the anisotropy of the wet etchant

  8. Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias.

    Science.gov (United States)

    Stefanov, Konstantin D; Clarke, Andrew S; Ivory, James; Holland, Andrew D

    2018-01-03

    A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths.

  9. Characterization of new hexagonal large area Geiger Avalanche Photodiodes

    International Nuclear Information System (INIS)

    Boccone, V.; Aguilar, J.A.; Della Volpe, D.; Christov, A.; Montaruli, T.; Rameez, M.; Basili, A.

    2013-06-01

    Photomultipliers (PMTs) are the standard detector for construction of the current generation of imaging Atmospheric Cherenkov Telescopes (IACTs). Despite impressive improvements in QE and reliability in the last years, these devices suffer from the limitation of being unable to operate in the partially illuminated sky (during full or partial moon periods) as the excess light leads to a significant increase in the rate of ageing of the devices themselves and consequently limit the life of the camera. A viable alternative is the large area Geiger-mode avalanche photodiodes (G-APDs also known as Silicon Photomultipliers or SiPMs) that are commercially available from different producers in various types and dimensions. The sufficiency of the maturity of this technology for application to Cherenkov Astronomy has already been demonstrated by the FACT telescope. One of the camera designs under study for the 4 m Davies Cotton Telescope foresees the utilization of a large area G-APDs coupled to non imaging light concentrators. In collaboration with Hamamatsu and deriving from their current technology, we have designed a new hexagonal shaped large area G-APD HEX S12516 which when coupled to a Winston cone of 24 degrees cutting angle allows for a pixel angular resolution of 0.25 degrees for a f/D 1.4 telescope with a diameter of 4 m. The device, available in 2 different cell size configurations (50 μm and 100 μm), is divided into 4 different channels powered in common cathode mode. A temperature sensor was included for a better temperature evaluation in the characterization phase. The first 3 prototypes were fully characterized and the results are compared to the larger area devices commercially available such as the S10985-050C (2x2 array of 3x3 mm 2 G-APDs). The photo-detection efficiency is measured applying the Poisson statistics method using pulsed LED at 7 different wavelengths from 355 to 670 nm and for different bias over-voltages (V ov ). Optical crosstalk and

  10. Avalanche photodiodes for ISABELLE detectors

    International Nuclear Information System (INIS)

    Strand, R.C.

    1979-01-01

    At ISABELLE some requirements for detecting bursts of photons are not met by standard photomultiplier tubes. The characteristics of immunity to magnetic fields, small size (few mm), low power consumption (approx. 100 mW), insensitivity to optical overloads, and wide dynamic range (approx. 60 dB) are achieved with difficulty, if at all, with PMTs. These are characteristics of the solid state avalanche photodiode (APD), the preferred detector for light-wave communications. Successful field tests with APD detectors stimulated the design of standard optical-fiber communication systems to replace wire carriers by the early 1980's. In other characteristics, i.e., counting rate, pulse-height resolution, effective quantum efficiency, detection efficiency, and reliability, bare APDs are equivalent to standard PMTs. APDs with currently available amplifiers cannot resolve single photoelectrons but they could provide reasonable detection efficiencies and pulse-height resolution for packets of approx. > 100 photons. Commercially available APDs can cost up to 100 times as much as PMTs per active area, but they are potentially much cheaper. Six topics are discussed: (1) detectors for light-wave communication and detectors for particles, (2) avalanche photodiodes, (3) commercially available APDs, (4) dynamic response of PMTs and bare APDs, (5) photon counting with cold APDs, and (6) conclusions and recommendations

  11. Structural and Electrochemical Investigation during the First Charging Cycles of Silicon Microwire Array Anodes for High Capacity Lithium Ion Batteries

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2013-02-01

    Full Text Available Silicon microwire arrays embedded in Cu present exceptional performance as anode material in Li ion batteries. The processes occurring during the first charging cycles of batteries with this anode are essential for good performance. This paper sheds light on the electrochemical and structural properties of the anodes during the first charging cycles. Scanning Electron Microscopy, X-ray diffractommetry, and fast Fourier transformation impedance spectroscopy are used for the characterization. It was found that crystalline phases with high Li content are obtained after the first lithiation cycle, while for the second lithiation just crystalline phases with less Li are observable, indicating that the lithiated wires become amorphous upon cycling. The formation of a solid electrolyte interface of around 250 nm during the first lithiation cycle is evidenced, and is considered a necessary component for the good cycling performance of the wires. Analog to voltammetric techniques, impedance spectroscopy is confirmed as a powerful tool to identify the formation of the different Si-Li phases.

  12. Photoemission and photo-field-emission from photocathodes with arrays of silicon tips under continuous and pulsed lasers action

    International Nuclear Information System (INIS)

    Laguna, M.

    1995-11-01

    The electron machines's development and improvement go through the discovery of new electron sources of high brightness. After reminding the interests in studying silicon cathodes with array of tips as electron sources, I describe, in the three steps model, the main phenomenological features related to photoemission and photoemission and photo-field-emission from a semi-conductor. the experimental set-ups used for the measurements reported in chapter four, five and six are described in chapter three. In chapter three. In chapter four several aspects of photo-field-emission in continuous and nanosecond regimes, studied on the Clermont-Ferrand's test bench are tackled. We have measured quantum efficacies of 0.4 percent in the red (1.96 eV). Temporal responses in the nanoseconds range (10 ns) were observed with the Nd: YLF laser. With the laser impinging at an oblique angle we obtained ratios of photocurrent to dark current of the order of twenty. The issue of the high energy extracted photocurrent saturation is addressed and I give a preliminary explanation. In collaboration with the L.A.L. (Laboratoire de l'Accelerateur Lineaire) some tests with shortened pulsed laser beam (Nd: YAG laser 35 ps) were performed. Satisfactory response times have been obtained within the limitation of the scope (400 ps). (authors). 101 refs. 93 figs., 27 tabs., 3 photos., 1 append

  13. Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

    Science.gov (United States)

    Couillard, Martin; Radtke, Guillaume; Botton, Gianluigi A.

    2013-04-01

    Strain fields around grain boundary dislocations are measured by applying geometric phase analysis on atomic resolution images obtained from multiple fast acquisitions in scanning transmission electron microscopy. Maps of lattice distortions in silicon introduced by an array of pure edge dislocations located at a Σ9(122) grain boundary are compared with the predictions from isotropic elastic theory, and the atomic structure of dislocation cores is deduced from images displaying all the atomic columns. For strain measurements, reducing the acquisition time is found to significantly decrease the effects of instabilities on the high-resolution images. Contributions from scanning artefacts are also diminished by summing multiple images following a cross-correlation alignment procedure. Combined with the sub-Ångström resolution obtained with an aberration corrector, and the stable dedicated microscope's environment, therapid acquisition method provides the measurements of atomic displacements with accuracy below 10 pm. Finally, the advantages of combining strain measurements with the collection of various analytical signals in a scanning transmission electron microscope are discussed.

  14. Silicon Wafer-Based Platinum Microelectrode Array Biosensor for Near Real-Time Measurement of Glutamate in Vivo

    Directory of Open Access Journals (Sweden)

    Nigel T. Maidment

    2008-08-01

    Full Text Available Using Micro-Electro-Mechanical-Systems (MEMS technologies, we have developed silicon wafer-based platinum microelectrode arrays (MEAs modified with glutamate oxidase (GluOx for electroenzymatic detection of glutamate in vivo. These MEAs were designed to have optimal spatial resolution for in vivo recordings. Selective detection of glutamate in the presence of the electroactive interferents, dopamine and ascorbic acid, was attained by deposition of polypyrrole and Nafion. The sensors responded to glutamate with a limit of detection under 1μM and a sub-1-second response time in solution. In addition to extensive in vitro characterization, the utility of these MEA glutamate biosensors was also established in vivo. In the anesthetized rat, these MEA glutamate biosensors were used for detection of cortically-evoked glutamate release in the ventral striatum. The MEA biosensors also were applied to the detection of stress-induced glutamate release in the dorsal striatum of the freely-moving rat.

  15. Substitution of photomultiplier tubes by photodiodes

    International Nuclear Information System (INIS)

    Teixeira, D.L.

    1990-04-01

    The application of Si semiconductors, either of the conventional or the avalanche type, as light amplifiers in radiation detection, has been studied aiming the substitution of photomultiplier (PM) tubes by photodiodes. The objective of this work is to compare the response of photodiodes and PM tubes when coupled to scintillation crystals. A Hamamatsu Si photodiode, model S 1337-66 B Q, was coupled to a Harshaw NaI (TI) scintillation crystal of window diameter equal to 25,4 mm. Its performance was evaluated by specially designed associated electronics, compatible with the photodiode characteristics. X-ray beams from 30 to 111 KeV were used to determine the response and the repeatability of the scintillator-photodiode and the scintillator-PM tube systems. The repeatability was found to be within 0,27% for the photodiode and 0,57% for the PM tube. This work confirmed that photodiodes can be used as light amplifiers, provided their characteristics, such as light spectrum response, are considered. It also shows that further studies are necessary in order to identify the applications in radiation detection where PM tubes might be replaced by photodiodes. (author)

  16. The photodiodes response in beta dosimetry

    International Nuclear Information System (INIS)

    Khoury, Helen; Amaral, Ademir; Hazin, Clovis; Melo, Francisco

    1996-01-01

    The response of the photodiodes BPY-12, BPW-34 and SFH-206 is tested for use as beta dosimeters. The results obtained show a dose-response relationships as well as less than 1% of coefficient of variation for the reproducibility of their responses. The photodiode BPY-12 has presented a better response in comparison with the others

  17. Gamma ray spectroscopy and timing using LSO and PIN photodiodes

    International Nuclear Information System (INIS)

    Moses, W.W.; Derenzo, S.E.; Melcher, C.L.; Manente, R.A.

    1994-11-01

    The high density, high light output, and short decay time of LSO (lutetium orthosilicate, Lu 2 SiO 5 :Ce) make it an attractive scintillator for gamma ray spectroscopy. The low cost, small size, high quantum efficiency, and ruggedness of silicon photodiodes make them attractive photodetectors for this same application, although their high noise (Compared to a photomultiplier tube) reduces their appeal. In this work the authors measure the gamma ray energy resolution, timing accuracy, and conversion factor from gamma energy to number of electron-hole pairs produced with a 3 x 3 x 22 mm 3 LSO scintillator crystal read out with a 3 x 3 mm 2 silicon PIN photodiode. When the detector is excited with 511 keV photons, a photopeak centered at 1,940 e - with 149 keV fwhm is observed and a timing signal with 35 ns fwhm jitter is produced. When the detector is excited with 1,275 keV photons, a photopeak centered at 4,910 e - with 149 keV fwhm is observed and a timing signal with 25 ns fwhm jitter is produced. While these performance measures are inferior to those obtained with photomultiplier tubes, they are acceptable for some applications

  18. Fabrication and photoelectrochemical properties of silicon nanowires/g-C{sub 3}N{sub 4} core/shell arrays

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Zhen [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Institute of Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Ma, Ge [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Chen, Zhihong, E-mail: chenzhihong1227@sina.com [Shenyang Institute of Automation, Guangzhou, Chinese Academy of Sciences, Guangzhou 511458 (China); Zhang, Yongguang [Research Institute for Energy Equipment Materials, Tianjin Key Laboratory of Materials Laminating Fabrication and Interface Control Technology, Hebei University of Technology, Tianjin 300130 (China); Zhang, Zhe [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Gao, Jinwei [Institute of Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Meng, Qingguo; Yuan, Mingzhe [Shenyang Institute of Automation, Guangzhou, Chinese Academy of Sciences, Guangzhou 511458 (China); Wang, Xin, E-mail: wangxin@scnu.edu.cn [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Liu, Jun-ming [Institute of Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Zhou, Guofu [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China)

    2017-02-28

    Highlights: • A novel Silicon Nanowires/g-C{sub 3}N{sub 4} core/shell arrays photoanode prepared by a mild and inexpensive metal-catalyzed electroless etching (MCEE) process followed by liquid atomic layer deposition (LALD), wiich is a facile and low-cost method. • In comparison with FTO/g-C{sub 3}N{sub 4} and Si NWs samples, the Si NWs/g-C{sub 3}N{sub 4} samples showed significantly enhanced photocurrent which could be attributed to the SiNWs-based core/shell structure. • A systematical PEC mechanism of the Si NWs/g-C{sub 3}N{sub 4} was proposed is this manuscript. - Abstract: A photoelectrochemical (PEC) cell made of metal-free carbon nitride (g-C{sub 3}N{sub 4}) @siliconnanowire(Si NW) arrays (denoted as Si NWs/g-C{sub 3}N{sub 4}) is presented in this work. The as-prepared photoelectrodes with different mass contents of g-C{sub 3}N{sub 4} have been synthesized via a metal-catalyzed electroless etching (MCEE), liquid atomic layer deposition (LALD) and annealing methods. The amount of g-C{sub 3}N{sub 4} on the Si NW arrays can be controlled by tuning the concentration of the cyanamide solution used in the LALD procedure. The dense and vertically aligned Si NWs/g-C{sub 3}N{sub 4} core/shell nanostructures were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). In comparison with FTO/g-C{sub 3}N{sub 4} and Si NW samples, the Si NWs/g-C{sub 3}N{sub 4} samples showed significantly enhanced photocurrents over the entire potential sweep range. Electrochemical impedance spectroscopy (EIS) was conducted to investigate the properties of the charge transfer process, and the results indicated that the enhanced PEC performance may be due to the increased photo-generated interfacial charge transfer between the Si NWs and g-C{sub 3}N{sub 4}. The photocurrent density reached 45 μA/cm{sup 2} under 100 mW/cm{sup 2} (AM 1.5 G) illumination at 0 V (vs. Pt) in neutral Na{sub 2}SO{sub 4} solution (pH ∼ 7

  19. Geiger mode avalanche photodiodes for microarray systems

    Science.gov (United States)

    Phelan, Don; Jackson, Carl; Redfern, R. Michael; Morrison, Alan P.; Mathewson, Alan

    2002-06-01

    New Geiger Mode Avalanche Photodiodes (GM-APD) have been designed and characterized specifically for use in microarray systems. Critical parameters such as excess reverse bias voltage, hold-off time and optimum operating temperature have been experimentally determined for these photon-counting devices. The photon detection probability, dark count rate and afterpulsing probability have been measured under different operating conditions. An active- quench circuit (AQC) is presented for operating these GM- APDs. This circuit is relatively simple, robust and has such benefits as reducing average power dissipation and afterpulsing. Arrays of these GM-APDs have already been designed and together with AQCs open up the possibility of having a solid-state microarray detector that enables parallel analysis on a single chip. Another advantage of these GM-APDs over current technology is their low voltage CMOS compatibility which could allow for the fabrication of an AQC on the same device. Small are detectors have already been employed in the time-resolved detection of fluorescence from labeled proteins. It is envisaged that operating these new GM-APDs with this active-quench circuit will have numerous applications for the detection of fluorescence in microarray systems.

  20. Programming Nanoparticles in Multiscale: Optically Modulated Assembly and Phase Switching of Silicon Nanoparticle Array.

    Science.gov (United States)

    Wang, Letian; Rho, Yoonsoo; Shou, Wan; Hong, Sukjoon; Kato, Kimihiko; Eliceiri, Matthew; Shi, Meng; Grigoropoulos, Costas P; Pan, Heng; Carraro, Carlo; Qi, Dongfeng

    2018-03-27

    Manipulating and tuning nanoparticles by means of optical field interactions is of key interest for nanoscience and applications in electronics and photonics. We report scalable, direct, and optically modulated writing of nanoparticle patterns (size, number, and location) of high precision using a pulsed nanosecond laser. The complex nanoparticle arrangement is modulated by the laser pulse energy and polarization with the particle size ranging from 60 to 330 nm. Furthermore, we report fast cooling-rate induced phase switching of crystalline Si nanoparticles to the amorphous state. Such phase switching has usually been observed in compound phase change materials like GeSbTe. The ensuing modification of atomic structure leads to dielectric constant switching. Based on these effects, a multiscale laser-assisted method of fabricating Mie resonator arrays is proposed. The number of Mie resonators, as well as the resonance peaks and dielectric constants of selected resonators, can be programmed. The programmable light-matter interaction serves as a mechanism to fabricate optical metasurfaces, structural color, and multidimensional optical storage devices.

  1. Integration of silicon-based neural probes and micro-drive arrays for chronic recording of large populations of neurons in behaving animals.

    Science.gov (United States)

    Michon, Frédéric; Aarts, Arno; Holzhammer, Tobias; Ruther, Patrick; Borghs, Gustaaf; McNaughton, Bruce; Kloosterman, Fabian

    2016-08-01

    Understanding how neuronal assemblies underlie cognitive function is a fundamental question in system neuroscience. It poses the technical challenge to monitor the activity of populations of neurons, potentially widely separated, in relation to behaviour. In this paper, we present a new system which aims at simultaneously recording from a large population of neurons from multiple separated brain regions in freely behaving animals. The concept of the new device is to combine the benefits of two existing electrophysiological techniques, i.e. the flexibility and modularity of micro-drive arrays and the high sampling ability of electrode-dense silicon probes. Newly engineered long bendable silicon probes were integrated into a micro-drive array. The resulting device can carry up to 16 independently movable silicon probes, each carrying 16 recording sites. Populations of neurons were recorded simultaneously in multiple cortical and/or hippocampal sites in two freely behaving implanted rats. Current approaches to monitor neuronal activity either allow to flexibly record from multiple widely separated brain regions (micro-drive arrays) but with a limited sampling density or to provide denser sampling at the expense of a flexible placement in multiple brain regions (neural probes). By combining these two approaches and their benefits, we present an alternative solution for flexible and simultaneous recordings from widely distributed populations of neurons in freely behaving rats.

  2. Continuous Czochralski growth: Silicon sheet growth development of the large area sheet task of the low cost silicon solar array project

    Science.gov (United States)

    Johnson, C. M.

    1980-12-01

    The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg of silicon single crystal material 15 cm or greater utilizing one common silicon container material (one crucible) is investigated. A crystal grower that is recharged with a new supply of polysilicon material while still under vacuum and at temperatures above the melting point of silicon is developed. It accepts large polysilicon charges up to 30 kg, grows large crystal ingots (to 15 cm diameter and 25 kg in weight), and holds polysilicon material for recharging (rod or lump) while, at the same time, growing crystal ingots. Special equipment is designed to recharge polysilicon rods, recharge polysilicon lumps, and handle and store large, hot silicon crystal ingots. Many continuous crystal growth runs were performed lasting as long as 109 hours and producing as many as ten crystal ingots, 15 cm with weights progressing to 27 kg.

  3. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

    Science.gov (United States)

    Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2016-08-22

    We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

  4. Photodiodes based on fullerene semiconductor

    International Nuclear Information System (INIS)

    Voz, C.; Puigdollers, J.; Cheylan, S.; Fonrodona, M.; Stella, M.; Andreu, J.; Alcubilla, R.

    2007-01-01

    Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct bandgap of 2.3 eV and absorption bands at 2.8 and 3.6 eV, which are related to the creation of charge-transfer excitons. Various photodiodes on indium-tin-oxide coated glass substrates were also fabricated, using different metallic contacts in order to compare their respective electrical characteristics. The influence of a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) buffer layer between the indium-tin-oxide electrode and the fullerene semiconductor is also demonstrated. These results are discussed in terms of the workfunction for each electrode. Finally, the behaviour of the external quantum efficiency is analyzed for the whole wavelength spectrum

  5. Solid State Neutral Particle Analyzer Array on NSTX

    International Nuclear Information System (INIS)

    Shinohara, K.; Darrow, D.S.; Roquemore, A.L.; Medley, S.S.; Cecil, F.E.

    2004-01-01

    A Solid State Neutral Particle Analyzer (SSNPA) array has been installed on the National Spherical Torus Experiment (NSTX). The array consists of four chords viewing through a common vacuum flange. The tangency radii of the viewing chords are 60, 90, 100, and 120 cm. They view across the three co-injection neutral beam lines (deuterium, 80 keV (typ.) with tangency radii 48.7, 59.2, and 69.4 cm) on NSTX and detect co-going energetic ions. A silicon photodiode used was calibrated by using a mono-energetic deuteron beam source. Deuterons with energy above 40 keV can be detected with the present setup. The degradation of the performance was also investigated. Lead shots and epoxy are used for neutron shielding to reduce handling any hazardous heavy metal. This method also enables us to make an arbitrary shape to be fit into the complex flight tube

  6. High-End Silicon PDICs

    Directory of Open Access Journals (Sweden)

    H. Zimmermann

    2008-05-01

    Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

  7. Performance evaluation of a sub-millimeter spatial resolution PET detector module using a digital silicon photomultiplier coupled LGSO array

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Hyun Tae [Molecular Imaging Research & Education (MiRe) Laboratory, Department of Electronic Engineering, Sogang University, Seoul (Korea, Republic of); Choi, Yong, E-mail: ychoi@sogang.ac.kr [Molecular Imaging Research & Education (MiRe) Laboratory, Department of Electronic Engineering, Sogang University, Seoul (Korea, Republic of); Kim, Kyu Bom; Lee, Sangwon [Molecular Imaging Research & Education (MiRe) Laboratory, Department of Electronic Engineering, Sogang University, Seoul (Korea, Republic of); Yamamoto, Seiichi [Department of Medical Technology, Nagoya University Graduate School of Medicine, Nagoya (Japan); Yeom, Jung-Yeol, E-mail: jungyeol@korea.ac.kr [School of Biomedical Engineering, Korea University, Seoul (Korea, Republic of)

    2017-02-21

    In positron emission tomography (PET) for breast, brain and small animal imaging, the spatial resolution of a PET detector is crucial to obtain high quality PET images. In this study, a PET detector for sub-millimeter spatial resolution imaging purpose was assembled using 4×4 pixels of a digital silicon photomultiplier (dSiPM, DPC-3200-22-44, Philips) coupled with a 15×15 LGSO array with BaSO{sub 4} reflector, and a 1 mm thick acrylic light guide for light distribution between the dSiPM pixels. The active area of each dSiPM pixel was 3.2×3.9 mm{sup 2} and the size of each LGSO scintillator element was 0.7×0.7×6 mm{sup 3}. In this paper, we experimentally demonstrated the performance of the PET detector by measuring the energy resolution, 2D flood map, peak to valley (P/V) ratio, and coincidence resolving time (CRT). All measurements were performed at a temperature of 10±1 ℃. The average energy resolution was 15.6% (without correcting for saturation effects) at 511 keV and the best CRT was 242±5 ps. The 2D flood map obtained with an energy window of 400–600 keV demonstrated clear identification of all pixels, and the average P/V ratio of the X- and Y-directions were 7.31 and 7.81, respectively. This study demonstrated that the PET detector could be suitable for application in high resolution PET while achieving good timing resolution.

  8. Spectroscopy study of imaging devices based on silicon Pixel Array Detector coupled to VATAGP7 read-out chips

    International Nuclear Information System (INIS)

    Linhart, V; Lacasta, C; Llosa, G; Stankova, V; Burdette, D; Chessi, E; Cochran, E; Honscheid, K; Kagan, H; Weilhammer, P; Cindro, V; Grosicar, B; Mikuz, M; Studen, A; Zontar, D; Clinthorne, N H

    2011-01-01

    Spectroscopic and timing response studies have been conducted on a detector module consisting of a silicon Pixel Array Detector bonded on two VATAGP7 read-out chips manufactured by Gamma-Medica Ideas using laboratory gamma sources and the internal calibration facilities (the calibration system of the read-out chips). The performed tests have proven that the chips have (i) non-linear calibration curves which can be approximated by power functions, (ii) capability to measure the energy of photons with energy resolution better than 2 keV (exact range and resolution depend on experimental setup), (iii) the internal calibration facility which provides 6 out of 16 available internal calibration charges within our region of interest (spanning the Compton edge of 511 keV photons). The peaks induced by the internal calibration facility are suitable for a fit of the calibration curves. However, they are not suitable for measurements of equivalent noise charge because their full width at half maximum varies with their amplitude. These facts indicate that the VATAGP7 chips are useful and precise tools for a wide variety of spectroscopic devices. We have also explored time walk of the module and peaking time of the spectroscopy signals provided by the chips. We have observed that (iv) the time walk is caused partly by the peaking time of the signals provided by the fast shaper of the chips and partly by the timing uncertainty related to the varying position of the photon interaction, (v) the peaking time of the spectroscopy signals provided by the chips increases with increasing pulse height.

  9. Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs{sub 0.92}Sb{sub 0.08}/n{sup +}-InAs heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Il’inskaya, N. D., E-mail: ioffeled@mail.ru; Karandashev, S. A. [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Karpukhina, N. G. [Limited Liability Company Ioffe LED Ltd. (Russian Federation); Lavrov, A. A.; Matveev, B. A.; Remennyi, M. A.; Stus, N. M.; Usikova, A. A. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

    2016-05-15

    The results of studies of the current–voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 × 64 linear array based on p-InAsSbP/n-InAsSb/n{sup +}-InAs with the n{sup +}-InAs-substrate side illuminated and sensitive in the region of 4-μm are reported. An analysis is performed of the mechanisms of current flow in the temperature range of 77–353 K and also of the photosensitivity and the speed of response taking into account the spatial distribution of nonequilibrium radiation and the data of capacitance–voltage measurements.

  10. Photodiodes utilization as ionizing radiation detectors

    International Nuclear Information System (INIS)

    Khoury, H.J.; Melo, F.A. de

    1987-01-01

    The response of photodiodes to α and γ radiation is studied, using for α spectrometry measures and for γ radiation dosimetry. Therefore, the response of BPY-12 photodiodes as α particle detector is first studied. The results show that the response is linear with the energy of incidence radiation, one resolution 25Kev for energy of 5,4 MeV from 241 Am. For dosimetric measures, the response of SHF-206 photodiodes, when exposed at γ radiation is studied, and the results show taht the response of this detector is linear with the dose ratio, proving its practicability in γ radiation dosimetry. (C.G.C.) [pt

  11. Effect of van der Waals forces on thermal conductance at the interface of a single-wall carbon nanotube array and silicon

    Directory of Open Access Journals (Sweden)

    Ya Feng

    2014-12-01

    Full Text Available Molecular dynamics simulations are performed to evaluate the effect of van der Waals forces among single-wall carbon nanotubes (SWNTs on the interfacial thermal conductance between a SWNT array and silicon substrate. First, samples of SWNTs vertically aligned on silicon substrate are simulated, where both the number and arrangement of SWNTs are varied. Results reveal that the interfacial thermal conductance of a SWNT array/Si with van der Waals forces present is higher than when they are absent. To better understand how van der Waals forces affect heat transfer through the interface between SWNTs and silicon, further constructs of one SWNT surrounded by different numbers of other ones are studied, and the results show that the interfacial thermal conductance of the central SWNT increases with increasing van der Waals forces. Through analysis of the covalent bonds and vibrational density of states at the interface, we find that heat transfer across the interface is enhanced with a greater number of chemical bonds and that improved vibrational coupling of the two sides of the interface results in higher interfacial thermal conductance. Van der Waals forces stimulate heat transfer at the interface.

  12. Low cost silicon solar array project: Feasibility of low-cost, high-volume production of silane and pyrolysis of silane to semiconductor-grade silicon

    Science.gov (United States)

    Breneman, W. C.

    1978-01-01

    Silicon epitaxy analysis of silane produced in the Process Development Unit operating in a completely integrated mode consuming only hydrogen and metallurgical silicon resulted in film resistivities of up to 120 ohms cm N type. Preliminary kinetic studies of dichlorosilane disproportionation in the liquid phase have shown that 11.59% SiH4 is formed at equilibrium after 12 minutes contact time at 56 C. The fluid-bed reactor was operated continuously for 48 hours with a mixture of one percent silane in helium as the fluidizing gas. A high silane pyrolysis efficiency was obtained without the generation of excessive fines. Gas flow conditions near the base of the reactor were unfavorable for maintaining a bubbling bed with good heat transfer characteristics. Consequently, a porous agglomerate formed in the lower portion of the reactor. Dense coherent plating was obtained on the silicon seed particles which had remained fluidizied throughout the experiment.

  13. A room temperature LSO/PIN photodiode PET detector module that measures depth of interaction

    International Nuclear Information System (INIS)

    Moses, W.W.; Derenzo, S.E.; Melcher, C.L.; Manente, R.A.

    1994-11-01

    We present measurements of a 4 element PET detector module that uses a 2x2 array of 3 mm square PIN photodiodes to both measure the depth of interaction (DOI) and identify the crystal of interaction. Each photodiode is coupled to one end of a 3x3x25 mm LSO crystal, with the opposite ends of all 4 crystals attached to a single PMT that provides a timing signal and initial energy discrimination. Each LSO crystal is coated with a open-quotes lossyclose quotes reflector, so the ratio of light detected in the photodiode and PMT depends on the position of interaction in the crystal, and is used to determine this position on an event by event basis. This module is operated at +25 degrees C with a photodiode amplifier peaking time of 2 μs. When excited by a collimated beam of 511 keV photons at the photodiode end of the module (i.e. closest to the patient), the DOI resolution is 4 mm fwhm and the crystal of interaction is identified correctly 95% of the time. When excited at the opposite end of the module, the DOI resolution is 13 mm fwhm and the crystal of interaction is identified correctly 73% of the time. The channel to channel variations in performance are minimal

  14. Megavoltage imaging with a large-area, flat-panel, amorphous silicon imager

    International Nuclear Information System (INIS)

    Antonuk, Larry E.; Yorkston, John; Huang Weidong; Sandler, Howard; Siewerdsen, Jeffrey H.; El-Mohri, Youcef

    1996-01-01

    Purpose: The creation of the first large-area, amorphous silicon megavoltage imager is reported. The imager is an engineering prototype built to serve as a stepping stone toward the creation of a future clinical prototype. The engineering prototype is described and various images demonstrating its properties are shown including the first reported patient image acquired with such an amorphous silicon imaging device. Specific limitations in the engineering prototype are reviewed and potential advantages of future, more optimized imagers of this type are presented. Methods and Materials: The imager is based on a two-dimensional, pixelated array containing amorphous silicon field-effect transistors and photodiode sensors which are deposited on a thin glass substrate. The array has a 512 x 560-pixel format and a pixel pitch of 450 μm giving an imaging area of ∼23 x 25 cm 2 . The array is used in conjunction with an overlying metal plate/phosphor screen converter as well as an electronic acquisition system. Images were acquired fluoroscopically using a megavoltage treatment machine. Results: Array and digitized film images of a variety of anthropomorphic phantoms and of a human subject are presented and compared. The information content of the array images generally appears to be at least as great as that of the digitized film images. Conclusion: Despite a variety of severe limitations in the engineering prototype, including many array defects, a relatively slow and noisy acquisition system, and the lack of a means to generate images in a radiographic manner, the prototype nevertheless generated clinically useful information. The general properties of these amorphous silicon arrays, along with the quality of the images provided by the engineering prototype, strongly suggest that such arrays could eventually form the basis of a new imaging technology for radiotherapy localization and verification. The development of a clinically useful prototype offering high

  15. Manipulation of extinction spectra of P3HT/PMMA medium arrays on silicon substrate containing self-assembled gold nanoparticles

    International Nuclear Information System (INIS)

    Wu, Ming-Chung; Chen, Shih-Wen; Li, Jia-Han; Chou, Yi; Lin, Jhih-Fong; Chen, Yang-Fang; Su, Wei-Fang

    2012-01-01

    In this study, we report a simple novel approach to modulate the extinction spectra of P3HT/PMMA by manipulating the medium arrays on a substrate that is coated with self-assembled gold nanoparticles. The 20 nm gold nanoparticles were synthesized and then self-assembled on the APTMS/silicon substrate surface by immersing the substrate into the gold colloid suspension. A high-resolution P3HT/PMMA photoluminescent electron beam resist was used to fabricate various square hole arrays on the substrate containing gold nanoparticles. The P3HT/PMMA medium composition causes the blue shifts in the extinction peaks of up to 40.6 nm by decreasing the period from 500 nm to 200 nm for P3HT/PMMA square hole arrays with a diameter of 100 nm. The magnitude of blue shift is directly proportional to the product of the changes of medium refractive index and the array structure factor. These peak shifts and intensity of extinction spectra for various P3HT/PMMA medium arrays are well described by the finite-difference time-domain (FDTD) simulation results. Since this simple cost-effective technique can tune the extinction spectrum of medium and adding the gold nanoparticles can give more functionalities for sensing applications, such as surface-enhanced Raman scattering (SERS), that provides good opportunities for the design and fabrication of new optoelectronic devices and sensors. Highlights: ► We can tune the extinction spectra of P3HT/PMMA by manipulating the medium arrays. ► These optical behaviors of P3HT/PMMA medium arrays are well described by FDTD simulation results. ► Adding the Au nanoparticles can give more functionalities for sensing applications.

  16. Manipulation of extinction spectra of P3HT/PMMA medium arrays on silicon substrate containing self-assembled gold nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Ming-Chung [Department of Chemical and Materials Engineering, Chang Gung University, Taoyuan 333-02, Taiwan (China); Chen, Shih-Wen; Li, Jia-Han [Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei 106-17, Taiwan (China); Chou, Yi; Lin, Jhih-Fong [Department of Materials Science and Engineering, National Taiwan University, Taipei 106-17, Taiwan (China); Chen, Yang-Fang [Department of Physics, National Taiwan University, Taipei 106-17, Taiwan (China); Su, Wei-Fang, E-mail: suwf@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 106-17, Taiwan (China)

    2012-11-15

    In this study, we report a simple novel approach to modulate the extinction spectra of P3HT/PMMA by manipulating the medium arrays on a substrate that is coated with self-assembled gold nanoparticles. The 20 nm gold nanoparticles were synthesized and then self-assembled on the APTMS/silicon substrate surface by immersing the substrate into the gold colloid suspension. A high-resolution P3HT/PMMA photoluminescent electron beam resist was used to fabricate various square hole arrays on the substrate containing gold nanoparticles. The P3HT/PMMA medium composition causes the blue shifts in the extinction peaks of up to 40.6 nm by decreasing the period from 500 nm to 200 nm for P3HT/PMMA square hole arrays with a diameter of 100 nm. The magnitude of blue shift is directly proportional to the product of the changes of medium refractive index and the array structure factor. These peak shifts and intensity of extinction spectra for various P3HT/PMMA medium arrays are well described by the finite-difference time-domain (FDTD) simulation results. Since this simple cost-effective technique can tune the extinction spectrum of medium and adding the gold nanoparticles can give more functionalities for sensing applications, such as surface-enhanced Raman scattering (SERS), that provides good opportunities for the design and fabrication of new optoelectronic devices and sensors. Highlights: Black-Right-Pointing-Pointer We can tune the extinction spectra of P3HT/PMMA by manipulating the medium arrays. Black-Right-Pointing-Pointer These optical behaviors of P3HT/PMMA medium arrays are well described by FDTD simulation results. Black-Right-Pointing-Pointer Adding the Au nanoparticles can give more functionalities for sensing applications.

  17. Basic opto-electronics on silicon for sensor applications

    NARCIS (Netherlands)

    Joppe, J.L.; Bekman, H.H.P.Th.; de Krijger, A.J.T.; Albers, H.; Chalmers, J.; Chalmers, J.D.; Holleman, J.; Ikkink, T.J.; Ikkink, T.; van Kranenburg, H.; Zhou, M.-J.; Zhou, Ming-Jiang; Lambeck, Paul

    1994-01-01

    A general platform for integrated opto-electronic sensor systems on silicon is proposed. The system is based on a hybridly integrated semiconductor laser, ZnO optical waveguides and monolithic photodiodes and electronic circuiry.

  18. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat; Frost, Thomas; Hazari, Arnab; Yan, Lifan; Stark, Ethan; LaMountain, Trevor; Millunchick, Joanna M.; Ooi, Boon S.; Bhattacharya, Pallab

    2015-01-01

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  19. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat

    2015-02-16

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  20. Development of a gamma dosimeter using a photodiode; Desenvolvimento de um dosimetro para radiacao gama utilizando fotodiodo

    Energy Technology Data Exchange (ETDEWEB)

    Melo, F.A. de

    1988-05-01

    In the last years, the application of semiconductor detectors in radiation spectroscopy and dosimetry has increased. Silicon diodes have found utility in radiation dosimetry principally because a diode produces a current approximately 18000 times larger than of an ionization chamber of an equal sensitive volume. As the characteristics of the semiconductor detectors are the same as the common photodiode, a gamma dosimeter using this type of electronic component was developed. The photodiode SFH206 operating in photovoltaic mode was used. An electrometric unit was constructed to measure the current generated in this detector. The results obtained showed: the response of the photodiode was linear with the dose and that variation of 40 degrees in the incidence angle of the radiation caused a variation of 5% in the dose determination; the response reproducibility of the photodiode was studied, and the results showed that the variation coefficient is smaller than 0,02%; the small dimension of the silicon photodiode recommend its use as a gamma dosimeter for medical applications. (author). 19 refs, 32 figs, 1 tab.

  1. Light induced tunnel effect in CNT-Si photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Aramo, C., E-mail: aramo@na.infn.it [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Ambrosio, M. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Bonavolontà, C. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Dip. di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Boscardin, M. [Centro per Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Via Sommarive 18, Povo di Trento, 38123 Trento (Italy); Castrucci, P. [INFN, Sezione di Roma “Tor Vergata”, Dip. di Fisica, Università degli Studi di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma (Italy); Crivellari, M. [Centro per Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Via Sommarive 18, Povo di Trento, 38123 Trento (Italy); De Crescenzi, M. [INFN, Sezione di Roma “Tor Vergata”, Dip. di Fisica, Università degli Studi di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma (Italy); De Lisio, C. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Dip. di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Fiandrini, E. [INFN, Sezione di Perugia, Dip. di Fisica, Università degli Studi di Perugia, Piazza Università 1, 06100 Perugia (Italy); and others

    2016-07-11

    Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4 V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5 V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics.

  2. Combined use of liquid chromatography-hybrid quadrupole time-of-flight mass spectrometry (LC-QTOF-MS) and high performance liquid chromatography with photodiode array detector (HPLC-DAD) in systematic toxicological analysis.

    Science.gov (United States)

    Broecker, Sebastian; Pragst, Fritz; Bakdash, Abdulsallam; Herre, Sieglinde; Tsokos, Michael

    2011-10-10

    Time of flight mass spectrometry provides new possibilities of substance identification by determination of the molecular formula from accurate molecular mass and isotope pattern. However, the huge number of possible isomers requires additional evidence. As a suitable way for routine performance of systematic toxicological analysis, a method for combined use of liquid chromatography-hybrid quadrupole time-of-flight mass spectrometry (LC-QTOF-MS) and high performance liquid chromatography with diode array detector (HPLC-DAD) was developed and applied to blood samples from 77 death cases. The blood samples were prepared by extraction with CH(2)Cl(2) and by protein precipitation with acetonitrile (1:4 (v/v)). The evaporated extracts were reconstituted in 35% acetonitril/0.1% formic acid/H(2)O and aliquots were injected for analysis by LC-QTOF-MS (Agilent 6530) and HPLC-DAD (Agilent 1200). A valve switching system enabled simultaneous operation of both separated chromatographic lines under their respective optimal conditions using the same autosampler. The ESI-QTOF-MS instrument was run in data dependent acquisition mode with switching between MS and MS/MS (cycle time 1.1s) and measuring the full mass spectra and the collision induced dissociation (CID) fragment spectra of all essential [M+H](+) ions. Libraries of accurate mass CID spectra (~2500 substances) and of DAD-UV spectra (~3300 substances) of the authors were used for substance identification. The application of this procedure is demonstrated in detail at four examples with multiple drug intake or administration. In the 77 cases altogether 198 substances were identified (87 by DAD and 195 by QTOF-MS) with a frequency between 1 and 20. In practical application, the sample preparation proved to be suitable for both techniques and for a wide variety of substances with different polarity. The automatic performance of the measurements was efficient and robust. Mutual confirmation, decrease of false positive and

  3. Process research of non-cz silicon material. Low cost solar array project, cell and module formation research area

    Science.gov (United States)

    1982-01-01

    Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated.

  4. Low cost solar array project: Cell and module formation research area. Process research of non-CZ silicon material

    Science.gov (United States)

    1983-01-01

    Meniscus coates tests, back junction formation using a new boron containing liquid, tests of various SiO2 and boron containing liquids, pelletized silicon for replenishment during web growth, and ion implantation compatibility/feasibility study are discussed.

  5. Array Automated Assembly Task Low Cost Silicon Solar Array Project. Phase 2. Annual technical report, September 20, 1977-December 31, 1978

    Energy Technology Data Exchange (ETDEWEB)

    Rhee, Sang S.; Jones, Gregory T.; Allison, Kimberly L.

    1978-01-01

    This program was conducted to develop and demonstrate those solar cells and module process steps which have the technological readiness or capability to achieve the 1986 LSA goals. Results are reported. Seventeen process groups were investigated. Very promising results were achieved. A laserscribe computer program was developed. It demonstrated that silicon solar cells could be trimmed and holed by laser without causing mechanical defects (i.e., microcracks) nor any major degradation in solar cell electrical performance. The silicon wafer surface preparation task demonstrated a low-cost, high throughput texturizing process readily adaptable to automation. Performance verification tests of a laser scanning system showed a limited capability to detect hidden cracks or defects in solar cells. A general review of currently available thick film printing equipment provided the indication that state-of-the-art technology can adequately transform the capability of current printing machines to the elevated rate of 7200 wafers per hour. The LFE System 8000 silicon nitride plasma deposition system with the inclusion of minor equipment modifications was shown to be consistent with the 1986 LSA pricing goals. The performance verification test of the silicon nitride A.R. coating process provided the result that texturized, A.R. coated solar cells display a 14.1% improvement in electrical performance over identical solar cells without an A.R. coating. A new electroless nickel plating system was installed and demonstrated a low-cost, high throughput process readily adaptable to automation. A multiple wafer dipping method was investigated and operational parameters defined. A flux removal method consisting of a three stage D.I. water cascade rinse system with ultrasonic agitator was found to be very promising. Also, a SAMICS cost analysis was performed. (WHK)

  6. Lab-on-chip system combining a microfluidic-ELISA with an array of amorphous silicon photosensors for the detection of celiac disease epitopes

    Directory of Open Access Journals (Sweden)

    Francesca Costantini

    2015-12-01

    Full Text Available This work presents a lab-on-chip system, which combines a glass-polydimethilsiloxane microfluidic network and an array of amorphous silicon photosensors for the diagnosis and follow-up of Celiac disease. The microfluidic chip implements an on-chip enzyme-linked immunosorbent assay (ELISA, relying on a sandwich immunoassay between antibodies against gliadin peptides (GPs and a secondary antibody marked with horseradish peroxidase (Ig-HRP. This enzyme catalyzes a chemiluminescent reaction, whose light intensity is detected by the amorphous silicon photosensors and transduced into an electrical signal that can be processed to recognize the presence of antibodies against GPs in the serum of people affected by Celiac syndrome.The correct operation of the developed lab-on-chip has been demonstrated using rabbit serum in the microfluidic ELISA. In particular, optimizing the dilution factors of both sera and Ig-HRP samples in the flowing solutions, the specific and non-specific antibodies against GPs can be successfully distinguished, showing the suitability of the presented device to effectively screen celiac disease epitopes. Keywords: Lab-on-chip, Celiac disease, Microfluidics, On-chip detection, ELISA, Amorphous silicon photosensors

  7. Low Cost Solar Array Project. Feasibility of the silane process for producing semiconductor-grade silicon. Final report, October 1975-March 1979

    Energy Technology Data Exchange (ETDEWEB)

    1979-06-01

    The commercial production of low-cost semiconductor-grade silicon is an essential requirement of the JPL/DOE (Department of Energy) Low-Cost Solar Array (LSA) Project. A 1000-metric-ton-per-year commercial facility using the Union Carbide Silane Process will produce molten silicon for an estimated price of $7.56/kg (1975 dollars, private financing), meeting the DOE goal of less than $10/kg. Conclusions and technology status are reported for both contract phases, which had the following objectives: (1) establish the feasibility of Union Carbide's Silane Process for commercial application, and (2) develop an integrated process design for an Experimental Process System Development Unit (EPSDU) and a commercial facility, and estimate the corresponding commercial plant economic performance. To assemble the facility design, the following work was performed: (a) collection of Union Carbide's applicable background technology; (b) design, assembly, and operation of a small integrated silane-producing Process Development Unit (PDU); (c) analysis, testing, and comparison of two high-temperature methods for converting pure silane to silicon metal; and (d) determination of chemical reaction equilibria and kinetics, and vapor-liquid equilibria for chlorosilanes.

  8. Piezo-Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis-NIR Broadband Photodiode.

    Science.gov (United States)

    Zou, Haiyang; Li, Xiaogan; Peng, Wenbo; Wu, Wenzhuo; Yu, Ruomeng; Wu, Changsheng; Ding, Wenbo; Hu, Fei; Liu, Ruiyuan; Zi, Yunlong; Wang, Zhong Lin

    2017-08-01

    Silicon underpins nearly all microelectronics today and will continue to do so for some decades to come. However, for silicon photonics, the indirect band gap of silicon and lack of adjustability severely limit its use in applications such as broadband photodiodes. Here, a high-performance p-Si/n-ZnO broadband photodiode working in a wide wavelength range from visible to near-infrared light with high sensitivity, fast response, and good stability is reported. The absorption of near-infrared wavelength light is significantly enhanced due to the nanostructured/textured top surface. The general performance of the broadband photodiodes can be further improved by the piezo-phototronic effect. The enhancement of responsivity can reach a maximum of 78% to 442 nm illumination, the linearity and saturation limit to 1060 nm light are also significantly increased by applying external strains. The photodiode is illuminated with different wavelength lights to selectively choose the photogenerated charge carriers (either electrons or holes) passing through the depletion region, to investigate the piezo-phototronic effect on electron or hole transport separately for the first time. This is essential for studying the basic principles in order to develop a full understanding about piezotronics and it also enables the development of the better performance of optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Development of an integrated four-channel fast avalanche-photodiode detector system with nanosecond time resolution

    Science.gov (United States)

    Li, Zhenjie; Li, Qiuju; Chang, Jinfan; Ma, Yichao; Liu, Peng; Wang, Zheng; Hu, Michael Y.; Zhao, Jiyong; Alp, E. E.; Xu, Wei; Tao, Ye; Wu, Chaoqun; Zhou, Yangfan

    2017-10-01

    A four-channel nanosecond time-resolved avalanche-photodiode (APD) detector system is developed at Beijing Synchrotron Radiation. It uses a single module for signal processing and readout. This integrated system provides better reliability and flexibility for custom improvement. The detector system consists of three parts: (i) four APD sensors, (ii) four fast preamplifiers and (iii) a time-digital-converter (TDC) readout electronics. The C30703FH silicon APD chips fabricated by Excelitas are used as the sensors of the detectors. It has an effective light-sensitive area of 10 × 10 mm2 and an absorption layer thickness of 110 μm. A fast preamplifier with a gain of 59 dB and bandwidth of 2 GHz is designed to readout of the weak signal from the C30703FH APD. The TDC is realized by a Spartan-6 field-programmable-gate-array (FPGA) with multiphase method in a resolution of 1ns. The arrival time of all scattering events between two start triggers can be recorded by the TDC. The detector has been used for nuclear resonant scattering study at both Advanced Photon Source and also at Beijing Synchrotron Radiation Facility. For the X-ray energy of 14.4 keV, the time resolution, the full width of half maximum (FWHM) of the detector (APD sensor + fast amplifier) is 0.86 ns, and the whole detector system (APD sensors + fast amplifiers + TDC readout electronics) achieves a time resolution of 1.4 ns.

  10. Photodiode measurements in Nucte-II

    International Nuclear Information System (INIS)

    Machida, M.; Aramaki, E.A.; Takahashi, T.; Ohara, M.; Nogi, N.

    1989-01-01

    Direct measurements of light emission from plasma produced by a field reversed theta-pinch NUCTE-II have been performed by using a set of photodiode detectors. The analysis shows that the plasma light emission can be related to the bremsstrahlung radiation and it is used to identify η=2 rotational instability parameters as rotation direction, angular velocity, and radial and axial displacement of the plasma column. A rough estimate for the temporal behaviour of the electro temperature has also been obtained by using the photodiode signal together with He-Ne laser interferometer and flux excluded signals. (author) [pt

  11. Performance of ultra-small silicon photomultiplier array with active area of 0.12 mm×0.12 mm

    Energy Technology Data Exchange (ETDEWEB)

    Yue, Wang; Zongde, Chen; Chenhui, Li; Ran, He; Shenyuan, Wang; Baicheng, Li; Ruiheng, Wang; Kun, Liang, E-mail: lk@bnu.edu.cn; Ru, Yang; Dejun, Han

    2015-07-01

    We report the performance of an ultra-small silicon photomultiplier (SiPM) line array with 7 elements of 0.12×0.12 mm{sup 2} in active area, 0.2 mm in pitch and 120 micro cells in one element. The device features an epitaxial bulk quenching resistor concept, demonstrated high geometrical fill factor of 41% and photon detection efficiency (PDE) of 25.4% in the wavelength region between 430 nm and 480 nm while retaining high micro cell density around 10 000 mm{sup −2} and ~3 ns FWHM of dark pulses width; it also demonstrated dark count rate of less than 28.7 kHz, optical crosstalk of the order of 2% to 4%, and excellent photon number discrimination. A 0.15 mm×1.6 mm×1.6 mm lutetium yttrium oxyorthosilicate (LYSO) crystal, corresponding to the width, length and height respectively, was successfully coupled to the 1×7 SiPM array for possible ultra-highly resolved positron emission tomography (PET) applications. This novel type of device has advantages particularly for small active area since the performances, such as PDE and response speed is one of the best among SiPMs with similarly high density of micro cells. It may pave a way for this type of SiPM as a promising pixel position sensitive device in imaging sensor applications. - Highlights: • The ultra-small SiPM line array with active area of 0.12 mm×0.12 mm was presented. • The ultra-small SiPM employs the bulk silicon structure as quenching resistor. • A considerable dynamic range and PDE over 25.4% @ 430 nm to 480 nm were characterized.

  12. Discussion about photodiode architectures for space applications

    Science.gov (United States)

    Gravrand, O.; Destefanis, G.; Cervera, C.; Zanatta, J.-P.; Baier, N.; Ferron, A.; Boulade, O.

    2017-11-01

    Detection for space application is very demanding on the IR detector: all wavelengths, from visible-NIR (2- 3um cutoff) to LWIR (10-12.5um cutoff), even sometimes VLWIR (15um cutoff) may be of interest. Moreover, various scenarii are usually considered. Some are imaging applications where the focal plane array (FPA) is used as an optical element to sense an image. However, the FPA may also be used in spectrometric applications where light is triggered on the different pixels depending on its wavelength. In some cases, star pointing is another use of FPAs where the retina is used to sense the position of the satellite. In all those configurations, we might distinguish several categories of applications: • low flux applications where the FPA is staring at space and the detection occurs with only a few number of photons. • high flux applications where the FPA is usually staring at the earth. In this case, the black body emission of the earth and its atmosphere ensures usually a large number of photons to perform the detection. Those two different categories are highly dimensioning for the detector as it usually determines the level of dark current and quantum efficiency (QE) requirements. Indeed, high detection performance usually requires a large number of integrated photons such that high QE is needed for low flux applications, in order to limit the integration time as much as possible. Moreover, dark current requirement is also directly linked to the expected incoming flux, in order to limit as much as possible the SNR degradation due to dark charges vs photocharges. Note that in most cases, this dark current is highly depending on operating temperature which dominates detector consumption. A classical way to mitigate dark current is to cool down the detector to very low temperatures. This paper won't discuss the need for wavefront sensing where the number of detected photons is low because of a very narrow integration window. Rigorously, this kind of

  13. Transient effects of ionizing radiation in Si, InGaAsP, GaAlSb, and Ge photodiodes

    International Nuclear Information System (INIS)

    Wiczer, J.J.; Barnes, C.E.; Dawson, L.R.

    1980-01-01

    Certain military applications require the continuous operation of optoelectronic information transfer systems during exposure to ionizing radiation. In such an environment the optical detector can be the system element which limits data transmission. We report here the measured electrical and optical characteristics of an irradiation tolerant photodiode fabricated from a double heterojunction structure in the gallium aluminum antimonide (GaAlSb) ternary semiconductor system. A series of tests at Sandia Laboratories' Relativistic Electron Beam Accelerator (REBA) subjected this device and commercially available photodiodes (made from silicon, germanium, and indium gallium arsenide phosphide) to dose rate levels of 10 7 to 10 8 rads/sec. The results of these tests show that the thin GaAlSb double heterojunction photodiode structure generates significantly less unwanted radiation induced current density than that of the next best commercial device

  14. The effect of lance geometry and carbon coating of silicon lances on propidium iodide uptake in lance array nanoinjection of HeLa 229 cells

    Science.gov (United States)

    Sessions, John W.; Lindstrom, Dallin L.; Hanks, Brad W.; Hope, Sandra; Jensen, Brian D.

    2016-04-01

    Connecting technology to biologic discovery is a core focus of non-viral gene therapy biotechnologies. One approach that leverages both the physical and electrical function of microelectromechanical systems (MEMS) in cellular engineering is a technology previously described as lance array nanoinjection (LAN). In brief, LAN consists of a silicon chip measuring 2 cm by 2 cm that has been etched to contain an array of 10 μm tall, solid lances that are spaced every 10 μm in a grid pattern. This array of lances is used to physically penetrate hundreds of thousands of cells simultaneously and to then electrically deliver molecular loads into cells. In this present work, two variables related to the microfabrication of the silicon lances, namely lance geometry and coating, are investigated. The purpose of both experimental variables is to assess these parameters’ effect on propidium iodide (PI), a cell membrane impermeable dye, uptake to injected HeLa 229 cells. For the lance geometry experimentation, three different microfabricated lance geometries were used which include a flat/narrow (FN, 1 μm diameter), flat/wide (FW, 2-2.5 μm diameter), and pointed (P, 1 μm diameter) lance geometries. From these tests, it was shown that the FN lances had a slightly better cell viability rate of 91.73% and that the P lances had the best PI uptake rate of 75.08%. For the lance coating experimentation, two different lances were fabricated, both silicon etched lances with some being carbon coated (CC) in a  <100 nm layer of carbon and the other lances being non-coated (Si). Results from this experiment showed no significant difference between lance types at three different nanoinjection protocols (0V, +1.5V DC, and  +5V Pulsed) for both cell viability and PI uptake rates. One exception to this is the comparison of CC/5V Pul and Si/5V Pul samples, where the CC/5V Pul samples had a cell viability rate 5% higher. Both outcomes were unexpected and reveal how to better

  15. Hybrid amplifier for calorimetry with photodiode readout

    Energy Technology Data Exchange (ETDEWEB)

    Sushkov, V V

    1994-12-31

    A hybrid surface mounted amplifier for the photodiode readout of the EM calorimeter has been developed. The main technical characteristics of the design are presented. The design able to math readout constraints for a high luminosity collider experiment is discussed. 10 refs., 2 tabs., 8 figs.

  16. Dose determination on buildup region using photodiodes

    International Nuclear Information System (INIS)

    Khoury, H.J.; Lopes, F.J.; Melo, F. de A.

    1989-01-01

    A clinical dosemeter using photodiode BPW-34 was developed, allowing the determination of dose on buildup region. The measures were made with X-rays beam of linear accelerator and with gamma radiation of cobalt 60. The results were compared with others made in a ionization chamber. (C.G.C.) [pt

  17. Ultra-high performance liquid chromatography coupled with photo-diode array and quadrupole/time-of-flight mass spectrometry based chemical profiling approach to evaluate the influence of preparation methods on the holistic quality of Qiong-Yu-Gao, a traditional complex herbal medicine.

    Science.gov (United States)

    Xu, Jin-Di; Mao, Qian; Shen, Hong; Zhu, Ling-Ying; Li, Song-Lin; Yan, Ru

    2013-08-23

    Qiong-Yu-Gao (QYG), consisting of Rehmanniae Radix (RR), Poriae (PO) and Ginseng Radix (GR), is a commonly used tonic traditional complex herbal medicine (CHM). So far, three different methods have been documented for preparation of QYG, i.e. method 1 (M1): mixing powders of GR and PO with decoction of RR; method 2 (M2): combining the decoction of RR and PO with the decoction of GR; method 3 (M3): decocting the mixture of RR, GR and PO. In present study, an ultra-high performance liquid chromatography coupled with photo-diode array and quadrupole/time-of-flight mass spectrometry (UHPLC-PDA-QTOF-MS/MS) based chemical profiling approach was developed to investigate the influence of the three preparation methods on the holistic quality of QYG. All detected peaks were unambiguously identified by comparing UV spectra, accurate mass data/characteristic mass fragments and retention times with those of reference compounds, and/or tentatively assigned by matching empirical molecular formula with that of known compounds, and/or elucidating quasi-molecular ions and fragment ions referring to information available in literature. A total of 103 components, mainly belonging to ginsenosides, phenethylalcohol glycosides, iridoid glycosides and triterpenoid acids, were identified, of which 5 degraded ginsenosides were putatively determined to be newly generated during preparation procedures of QYG samples. Triterpenoid acids and malonyl-ginsenosides were detected only in M1 samples, while degraded ginsenosides were merely detectable in M2/M3 samples. The possible reasons for the difference among chemical profiles of QYG samples prepared with three methods were also discussed. It could be concluded that preparation method do significantly affect the holistic quality of QYG. The influence of the altered chemical profiles on the bioactivity of QYG needs further investigation. The present study demonstrated that UHPLC-PDA-QTOF-MS/MS based chemical profiling approach is efficient and

  18. A novel, SiPM-array-based, monolithic scintillator detector for PET

    International Nuclear Information System (INIS)

    Schaart, Dennis R; Dam, Herman T van; Seifert, Stefan; Beekman, Freek J; Vinke, Ruud; Dendooven, Peter; Loehner, Herbert

    2009-01-01

    Silicon photomultipliers (SiPMs) are of great interest to positron emission tomography (PET), as they enable new detector geometries, for e.g., depth-of-interaction (DOI) determination, are MR compatible, and offer faster response and higher gain than other solid-state photosensors such as avalanche photodiodes. Here we present a novel detector design with DOI correction, in which a position-sensitive SiPM array is used to read out a monolithic scintillator. Initial characterization of a prototype detector consisting of a 4 x 4 SiPM array coupled to either the front or back surface of a 13.2 mm x 13.2 mm x 10 mm LYSO:Ce 3+ crystal shows that front-side readout results in significantly better performance than conventional back-side readout. Spatial resolutions 2 detector, equals 960 ps FWHM.

  19. Comparative study of various pixel photodiodes for digital radiography: Junction structure, corner shape and noble window opening

    Science.gov (United States)

    Kang, Dong-Uk; Cho, Minsik; Lee, Dae Hee; Yoo, Hyunjun; Kim, Myung Soo; Bae, Jun Hyung; Kim, Hyoungtaek; Kim, Jongyul; Kim, Hyunduk; Cho, Gyuseong

    2012-05-01

    Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 µm × 50 µm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

  20. Comparative study of various pixel photodiodes for digital radiography: junction structure, corner shape and noble window opening

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Dong-Uk; Cho, Min-Sik; Lee, Dae-Hee; Yoo, Hyun-Jun; Kim, Myung-Soo; Bae, Jun-Hyung; Kim, Hyoung-Taek; Kim, Jong-Yul; Kim, Hyun-Duk; Cho, Gyu-Seong [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

    2012-05-15

    Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 μm x 50 μm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200 fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

  1. An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

    International Nuclear Information System (INIS)

    Sun, Y. T.; Omanakuttan, G.; Lourdudoss, S.

    2015-01-01

    An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm 2 at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm 2 , an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon

  2. A compact readout system for multi-pixel hybrid photodiodes

    International Nuclear Information System (INIS)

    Datema, C.P.; Meng, L.J.; Ramsden, D.

    1999-01-01

    Although the first Multi-pixel Hybrid Photodiode (M-HPD) was developed in the early 1990s by Delft Electronic Products, the main obstacle to its application has been the lack of availability of a compact read-out system. A fast, parallel readout system has been constructed for use with the earlier 25-pixel tube with High-energy Physics applications in mind. The excellent properties of the recently developed multi-pixel hybrid photodiodes (M-HPD) will be easier to exploit following the development of the new hybrid read-out circuits described in this paper. This system will enable all of the required read-out functions to be accommodate on a single board into which the M-HPD is plugged. The design and performance of a versatile system is described in which a trigger-signal, derived from the common-side of the silicon anode in the M-HPD, is used to trigger the readout of the 60-anode pixels in the M-HPD. The multi-channel amplifier section is based on the use of a new, commercial VLSI chip, whilst the read-out sequencer uses a chip of its own design. The common anode signal is processed by a fast amplifier and discriminator to provide a trigger signal when a single event is detected. In the prototype version, the serial analogue output data-stream is processed using a PC-mounted, high speed ADC. Results obtained using the new read-out system in a compact gamma-camera and with a small muon tracking-chamber demonstrate the low-noise performance of the system. The application of this read-out system in other position-sensitive or multi-anode photomultiplier tube applications are also described

  3. Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

    Science.gov (United States)

    1981-01-01

    Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

  4. Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

    Science.gov (United States)

    1983-01-01

    Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

  5. Fabrication and Doping Methods for Silicon Nano- and Micropillar Arrays for Solar-Cell Applications: A Review.

    Science.gov (United States)

    Elbersen, Rick; Vijselaar, Wouter; Tiggelaar, Roald M; Gardeniers, Han; Huskens, Jurriaan

    2015-11-18

    Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p/n junctions. High densities of such structures greatly enhance the light-absorbing properties of the device, whereas the 3D p/n junction geometry shortens the diffusion length of minority carriers and diminishes recombination. Due to the vast silicon nano- and microfabrication toolbox that exists nowadays, many versatile methods for the preparation of such highly structured samples are available. Furthermore, the formation of p/n junctions on structured surfaces is possible by a variety of doping techniques, in large part transferred from microelectronic circuit technology. The right choice of doping method, to achieve good control of junction depth and doping level, can contribute to an improvement of the overall efficiency that can be obtained in devices for energy applications. A review of the state-of-the-art of the fabrication and doping of silicon micro and nanopillars is presented here, as well as of the analysis of the properties and geometry of thus-formed 3D-structured p/n junctions. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO2

    Directory of Open Access Journals (Sweden)

    Gardelis Spiros

    2011-01-01

    Full Text Available Abstract In this study we investigate the electronic transport, the optical properties, and photocurrent in two-dimensional arrays of silicon nanocrystals (Si NCs embedded in silicon dioxide, grown on quartz and having sizes in the range between less than 2 and 20 nm. Electronic transport is determined by the collective effect of Coulomb blockade gaps in the Si NCs. Absorption spectra show the well-known upshift of the energy bandgap with decreasing NC size. Photocurrent follows the absorption spectra confirming that it is composed of photo-generated carriers within the Si NCs. In films containing Si NCs with sizes less than 2 nm, strong quantum confinement and exciton localization are observed, resulting in light emission and absence of photocurrent. Our results show that Si NCs are useful building blocks of photovoltaic devices for use as better absorbers than bulk Si in the visible and ultraviolet spectral range. However, when strong quantum confinement effects come into play, carrier transport is significantly reduced due to strong exciton localization and Coulomb blockade effects, thus leading to limited photocurrent.

  7. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    Science.gov (United States)

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-06

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  8. Vertically aligned carbon nanotube field emitter arrays with Ohmic base contact to silicon by Fe-catalyzed chemical vapor deposition

    NARCIS (Netherlands)

    Morassutto, M.; Tiggelaar, Roald M.; Smithers, M.A.; Smithers, M.A.; Gardeniers, Johannes G.E.

    2016-01-01

    Abstract In this study, dense arrays of aligned carbon nanotubes are obtained by thermal catalytic chemical vapor deposition, using Fe catalyst dispersed on a thin Ta layer. Alignment of the carbon nanotubes depends on the original Fe layer thickness from which the catalyst dispersion is obtained by

  9. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  10. Pentacene-based photodiode with Schottky junction

    International Nuclear Information System (INIS)

    Lee, Jiyoul; Hwang, D.K.; Park, C.H.; Kim, S.S.; Im, Seongil

    2004-01-01

    We have fabricated a metal/organic semiconductor Schottky photodiode based on Al/pentacene junction. Since the energy band gap of thin solid pentacene was determined to be 1.82 eV, as characterized by direct absorption spectroscopy, we measured spectral photoresponses on our Schottky photodiode in the monochromatic light illumination range of 325-650 nm applying a reverse bias of -2 V. The main features of photo-response spectra were found to shift from those of direct absorption spectra toward higher photon energies. It is because the direct absorption spectra mainly show exciton level peaks rather than the true highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gaps while the photo-response spectra clearly represents the true HOMO-LUMO gap. Our photo-response spectra reveal 1.97 eV as the HOMO-LUMO gap

  11. Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

    Science.gov (United States)

    Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

    2003-06-01

    We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

  12. Silicon radiation detector

    International Nuclear Information System (INIS)

    Benc, I.; Kerhart, J.; Kopecky, J.; Krca, P.; Veverka, V.; Weidner, M.; Weinova, H.

    1992-01-01

    The silicon radiation detector, which is designed for the detection of electrons with energies above 500 eV and of radiation within the region of 200 to 1100 nm, comprises a PIN or PNN + type photodiode. The active acceptor photodiode is formed by a detector surface of shallow acceptor diffusion surrounded by a collector band of deep acceptor diffusion. The detector surface of shallow P-type diffusion with an acceptor concentration of 10 15 to 10 17 atoms/cm 3 reaches a depth of 40 to 100 nm. One sixth to one eighth of the collector band width is overlapped by the P + collector band at a width of 150 to 300 μm with an acceptor concentration of 10 20 to 10 21 atoms/cm 3 down a depth of 0.5 to 3 μm. This band is covered with a conductive layer, of NiCr for instance. (Z.S.)

  13. Low cost silicon solar array project silicon materials task: Establishment of the feasibility of a process capable of low-cost, high volume production of silane (step 1) and the pyrolysis of silane to semiconductor-grade silicon (step 2)

    Science.gov (United States)

    Breneman, W. C.; Cheung, H.; Farrier, E. G.; Morihara, H.

    1977-01-01

    A quartz fluid bed reactor capable of operating at temperatures of up to 1000 C was designed, constructed, and successfully operated. During a 30 minute experiment, silane was decomposed within the reactor with no pyrolysis occurring on the reactor wall or on the gas injection system. A hammer mill/roller-crusher system appeared to be the most practical method for producing seed material from bulk silicon. No measurable impurities were detected in the silicon powder produced by the free space reactor, using the cathode layer emission spectroscopic technique. Impurity concentration followed by emission spectroscopic examination of the residue indicated a total impurity level of 2 micrograms/gram. A pellet cast from this powder had an electrical resistivity of 35 to 45 ohm-cm and P-type conductivity.

  14. Photo-Electrical Characterization of Silicon Micropillar Arrays with Radial p/n Junctions Containing Passivation and Anti-Reflection Coatings

    NARCIS (Netherlands)

    Vijselaar, Wouter; Elbersen, R.; Tiggelaar, Roald M.; Gardeniers, Han; Huskens, Jurriaan

    2017-01-01

    In order to assess the contributions of anti-reflective and passivation effects in microstructured silicon-based solar light harvesting devices, thin layers of aluminum oxide (Al2O3), silicon dioxide (SiO2), silicon-rich silicon nitride (SiNx), and indium tin oxide (ITO), with a thickness ranging

  15. A LSO scintillator array for a PET detector module with depth of interaction measurement

    International Nuclear Information System (INIS)

    Huber, J.S.; Moses, W.W.; Andreaco, M.S.; Petterson, O.

    2000-01-01

    We present construction methods and performance results for a production scintillator array of 64 optically isolated, 3 mm x 3 mm x 30 mm sized LSO crystals. This scintillator array has been developed for a PET detector module consisting of the 8x8 LSO array coupled on one end to a single photomultiplier tube (PMT) and on the opposite end to a 64 pixel array of silicon photodiodes (PD). The PMT provides an accurate timing pulse and initial energy discrimination, the PD identifies the crystal of interaction, the sum provides a total energy signal, and the PD/(PD+PMT) ratio determines the depth of interaction (DOI). Unlike the previous LSO array prototypes, we now glue Lumirror reflector material directly onto 4 sides of each crystal to obtain an easily manufactured, mechanically rugged array with our desired depth dependence. With 511 keV excitation, we obtain a total energy signal of 3600 electrons, pulse-height resolution of 25% fwhm, and 6-15 mm fwhm DOI resolution

  16. Results from a test of a Cu-scintillator calorimeter module with photodiode readout

    International Nuclear Information System (INIS)

    Fischer, F.; Kiesling, C.; Lorenz, E.; Mageras, G.; Scholz, S.

    1986-05-01

    A calorimeter module of 17 radiation lengths depth has been built. Wavelength shifter (WLS) bars coupled to rectangular silicon photodiodes (PD's) are use as readout. Considerations in the design of the WLS bars, with particular emphasis on optimising the efficiency for PD readout, are discussed. The energy resolution for electrons has been determined to be about 9%/√E between 2 and 50 GeV. The response to hadrons is presented and the prospects for the construction of a full-sized hadron calorimeter are discussed. (orig.)

  17. Highly segmented large-area hybrid photodiodes with bialkali photocathodes and enclosed VLSI readout electronics

    CERN Document Server

    Braem, André; Filthaut, Frank; Go, A; Joram, C; Weilhammer, Peter; Wicht, P; Dulinski, W; Séguinot, Jacques; Wenzel, H; Ypsilantis, Thomas

    2000-01-01

    We report on the principles, design, fabrication, and operation of a highly segmented, large-area hybrid photodiode, which is being developed in the framework of the LHCb RICH project. The device consists of a cylindrical, 127 mm diameter vacuum envelope capped with a spherical borosilicate UV-glass entrance window, with an active-to-total-area fraction of 81A fountain-focusing electron optics is used to demagnify the image onto a 50 mm diameter silicon sensor, containing 2048 pads of size 1*1 mm/sup 2/. (10 refs).

  18. A photodiode amplifier system for pulse-by-pulse intensity measurement of an x-ray free electron laser.

    Science.gov (United States)

    Kudo, Togo; Tono, Kensuke; Yabashi, Makina; Togashi, Tadashi; Sato, Takahiro; Inubushi, Yuichi; Omodani, Motohiko; Kirihara, Yoichi; Matsushita, Tomohiro; Kobayashi, Kazuo; Yamaga, Mitsuhiro; Uchiyama, Sadayuki; Hatsui, Takaki

    2012-04-01

    We have developed a single-shot intensity-measurement system using a silicon positive-intrinsic-negative (PIN) photodiode for x-ray pulses from an x-ray free electron laser. A wide dynamic range (10(3)-10(11) photons/pulse) and long distance signal transmission (>100 m) were required for this measurement system. For this purpose, we developed charge-sensitive and shaping amplifiers, which can process charge pulses with a wide dynamic range and variable durations (ns-μs) and charge levels (pC-μC). Output signals from the amplifiers were transmitted to a data acquisition system through a long cable in the form of a differential signal. The x-ray pulse intensities were calculated from the peak values of the signals by a waveform fitting procedure. This system can measure 10(3)-10(9) photons/pulse of ~10 keV x-rays by direct irradiation of a silicon PIN photodiode, and from 10(7)-10(11) photons/pulse by detecting the x-rays scattered by a diamond film using the silicon PIN photodiode. This system gives a relative accuracy of ~10(-3) with a proper gain setting of the amplifiers for each measurement. Using this system, we succeeded in detecting weak light at the developmental phase of the light source, as well as intense light during lasing of the x-ray free electron laser. © 2012 American Institute of Physics

  19. Flat-plate solar array project process development area: Process research of non-CZ silicon material

    Science.gov (United States)

    Campbell, R. B.

    1986-01-01

    Several different techniques to simultaneously diffuse the front and back junctions in dendritic web silicon were investigated. A successful simultaneous diffusion reduces the cost of the solar cell by reducing the number of processing steps, the amount of capital equipment, and the labor cost. The three techniques studied were: (1) simultaneous diffusion at standard temperatures and times using a tube type diffusion furnace or a belt furnace; (2) diffusion using excimer laser drive-in; and (3) simultaneous diffusion at high temperature and short times using a pulse of high intensity light as the heat source. The use of an excimer laser and high temperature short time diffusion experiment were both more successful than the diffusion at standard temperature and times. The three techniques are described in detail and a cost analysis of the more successful techniques is provided.

  20. Simulations of Si-PIN photodiode based detectors for underground explosives enhanced by ammonium nitrate

    Science.gov (United States)

    Yücel, Mete; Bayrak, Ahmet; Yücel, Esra Barlas; Ozben, Cenap S.

    2018-02-01

    Massive Ammonium Nitrate (NH4-NO3) based explosives buried underground are commonly used in terror attacks. These explosives can be detected using neutron scattering method with some limitations. Simulations are very useful tools for designing a possible detection system for these kind of explosives. Geant4 simulations were used for generating neutrons at 14 MeV energy and tracking them through the scattering off the explosive embedded in soil. Si-PIN photodiodes were used as detector elements in the design for their low costs and simplicity for signal readout electronics. Various neutron-charge particle converters were applied on to the surface of the photodiodes to increase the detection efficiency. Si-PIN photodiodes coated with 6LiF provided the best result for a certain energy interval. Energy depositions in silicon detector from all secondary particles generated including photons were taken into account to generate a realistic background. Humidity of soil, one of the most important parameter for limiting the detection, was also studied.

  1. Depth of interaction resolution measurements for a high resolution PET detector using position sensitive avalanche photodiodes

    International Nuclear Information System (INIS)

    Yang Yongfeng; Dokhale, Purushottam A; Silverman, Robert W; Shah, Kanai S; McClish, Mickel A; Farrell, Richard; Entine, Gerald; Cherry, Simon R

    2006-01-01

    We explore dual-ended read out of LSO arrays with two position sensitive avalanche photodiodes (PSAPDs) as a high resolution, high efficiency depth-encoding detector for PET applications. Flood histograms, energy resolution and depth of interaction (DOI) resolution were measured for unpolished LSO arrays with individual crystal sizes of 1.0, 1.3 and 1.5 mm, and for a polished LSO array with 1.3 mm pixels. The thickness of the crystal arrays was 20 mm. Good flood histograms were obtained for all four arrays, and crystals in all four arrays can be clearly resolved. Although the amplitude of each PSAPD signal decreases as the interaction depth moves further from the PSAPD, the sum of the two PSAPD signals is essentially constant with irradiation depth for all four arrays. The energy resolutions were similar for all four arrays, ranging from 14.7% to 15.4%. A DOI resolution of 3-4 mm (including the width of the irradiation band which is ∼2 mm) was obtained for all the unpolished arrays. The best DOI resolution was achieved with the unpolished 1 mm array (average 3.5 mm). The DOI resolution for the 1.3 mm and 1.5 mm unpolished arrays was 3.7 and 4.0 mm respectively. For the polished array, the DOI resolution was only 16.5 mm. Summing the DOI profiles across all crystals for the 1 mm array only degraded the DOI resolution from 3.5 mm to 3.9 mm, indicating that it may not be necessary to calibrate the DOI response separately for each crystal within an array. The DOI response of individual crystals in the array confirms this finding. These results provide a detailed characterization of the DOI response of these PSAPD-based PET detectors which will be important in the design and calibration of a PET scanner making use of this detector approach

  2. Liquid-helium scintillation detection with germanium photodiodes

    International Nuclear Information System (INIS)

    Luke, P.N.; Haller, E.E.; Steiner, H.M.

    1982-05-01

    Special high-purity germanium photodiodes have been developed for the direct detection of vacuum ultraviolet scintillations in liquid helium. The photodiodes are immersed in the liquid helium, and scintillations are detected through one of the bare sides of the photodiodes. Test results with scintillation photons produced by 5.3-MeV α particles are presented. The use of these photodiodes as liquid-helium scintillation detectors may offer substantial improvements over the alternate detection method requiring the use of wavelength shifters and photomultiplier tubes

  3. A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer

    Science.gov (United States)

    Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, Nosoung; Ko, Heung Cho; Jung, Gun Young

    2015-08-01

    Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer

  4. Radiation damage effect on avalanche photodiodes

    CERN Document Server

    Baccaro, S; Cavallari, F; Da Ponte, V; Deiters, K; Denes, P; Diemoz, M; Kirn, Th; Lintern, A L; Longo, E; Montecchi, M; Musienko, Y; Pansart, J P; Renker, D; Reucroft, S; Rosi, G; Rusack, R; Ruuska, D; Stephenson, R; Torbet, M J

    1999-01-01

    Avalanche Photodiodes have been chosen as photon sensors for the electromagnetic calorimeter of the CMS experiment at the LHC. These sensors should operate in the 4T magnetic field of the experiment. Because of the high neutron radiation in the detector extensive studies have been done by the CMS collaboration on the APD neutron radiation damage. The characteristics of these devices after irradiation have been analized, with particular attention to the quantum efficiency and the dark current. The recovery of the radiation induced dark current has been studied carefully at room temperature and at slightly lower and higher temperatures. The temperature dependence of the defects decay-time has been evaluated.

  5. Responses of the multi-photodiode readout

    International Nuclear Information System (INIS)

    Tamai, K.

    2000-01-01

    The responses for a signal in various configurations of photodiodes (PDs) and preamplifiers are analyzed by Laplace transformation. The electronic noise in the configuration is derived using the Fourier transformation. The responses and noise are obtained by an analogical extension of the impedance from a single-PD configuration to the multi-PD configuration; however, the noise is not so simple when connected in series. Using the results, we evaluate the energy resolution of the configurations. A series PD connection realizes a better resolution than a parallel connection in the fast shaping

  6. Preparation of thin hexagonal highly-ordered anodic aluminum oxide (AAO) template onto silicon substrate and growth ZnO nanorod arrays by electrodeposition

    Science.gov (United States)

    Chahrour, Khaled M.; Ahmed, Naser M.; Hashim, M. R.; Elfadill, Nezar G.; Qaeed, M. A.; Bououdina, M.

    2014-12-01

    In this study, anodic aluminum oxide (AAO) templates of Aluminum thin films onto Ti-coated silicon substrates were prepared for growth of nanostructure materials. Hexagonally highly ordered thin AAO templates were fabricated under controllable conditions by using a two-step anodization. The obtained thin AAO templates were approximately 70 nm in pore diameter and 250 nm in length with 110 nm interpore distances within an area of 3 cm2. The difference between first and second anodization was investigated in details by in situ monitoring of current-time curve. A bottom barrier layer of the AAO templates was removed during dropping the voltage in the last period of the anodization process followed by a wet etching using phosphoric acid (5 wt%) for several minutes at ambient temperature. As an application, Zn nanorod arrays embedded in anodic alumina (AAO) template were fabricated by electrodeposition. Oxygen was used to oxidize the electrodeposited Zn nanorods in the AAO template at 700 °C. The morphology, structure and photoluminescence properties of ZnO/AAO assembly were analyzed using Field-emission scanning electron microscope (FESEM), Energy dispersive X-ray spectroscopy (EDX), Atomic force microscope (AFM), X-ray diffraction (XRD) and photoluminescence (PL).

  7. A Lithium-Ion Battery using a 3 D-Array Nanostructured Graphene-Sulfur Cathode and a Silicon Oxide-Based Anode.

    Science.gov (United States)

    Benítez, Almudena; Di Lecce, Daniele; Elia, Giuseppe Antonio; Caballero, Álvaro; Morales, Julián; Hassoun, Jusef

    2018-05-09

    An efficient lithium-ion battery was assembled by using an enhanced sulfur-based cathode and a silicon oxide-based anode and proposed as an innovative energy-storage system. The sulfur-carbon composite, which exploits graphene carbon with a 3 D array (3DG-S), was synthesized by a reduction step through a microwave-assisted solvothermal technique and was fully characterized in terms of structure and morphology, thereby revealing suitable features for lithium-cell application. Electrochemical tests of the 3DG-S electrode in a lithium half-cell indicated a capacity ranging from 1200 to 1000 mAh g -1 at currents of C/10 and 1 C, respectively. Remarkably, the Li-alloyed anode, namely, Li y SiO x -C prepared by the sol-gel method and lithiated by surface treatment, showed suitable performance in a lithium half-cell by using an electrolyte designed for lithium-sulfur batteries. The Li y SiO x -C/3DG-S battery was found to exhibit very promising properties with a capacity of approximately 460 mAh g S -1 delivered at an average voltage of approximately 1.5 V over 200 cycles, suggesting that the characterized materials would be suitable candidates for low-cost and high-energy-storage applications. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Depth-of-interaction measurement in a single-layer crystal array with a single-ended readout using digital silicon photomultiplier

    International Nuclear Information System (INIS)

    Lee, Min Sun; Lee, Jae Sung

    2015-01-01

    We present the first experimental evaluation of a depth-of-interaction (DOI) positron emission tomography (PET) detector using a digital silicon photomultiplier (dSiPM). To measure DOI information from a mono-layer array of scintillation crystals with a single-ended readout, our group has previously proposed and developed a new method based on light spread using triangular reflectors. Since this method relies on measurement of the light distribution, dSiPM, which has a fully digital interface, has several merits for our DOI measurement. The DOI PET detector comprised of a dSiPM sensor (DPC-3200-22-44) coupled with a 14   ×   14 array of 2 mm  ×  2 mm  ×  20 mm unpolished LGSO crystals. All crystals were covered with triangular reflectors. To obtain a good performance of the DOI PET detector, several parameters of detector were selected as a preliminary experiment. Detector performance was evaluated with the selected parameters and the optimal experimental setup, and a DOI measurement was conducted by irradiating the crystal block at five DOI positions spaced at intervals of 4 mm. Maximum-likelihood estimation was employed for DOI positioning and the optimal DOI estimation scheme was also investigated in this study. As a result, the DOI PET detector showed clear crystal identification. The energy resolution (full-width at half-maximum (FWHM)) averaged over all depths was 10.21%  ±  0.15% at 511 keV, and time resolution averaged over all depths was 1198.61   ±   39.70 ps FWHM. The average DOI positioning accuracy for all depths was 74.22%  ±  6.77%, which equates to DOI resolution of 4.67 mm. Energy and DOI resolutions were uniform over all crystal positions except for the back parts of the array. Furthermore, additional simulation studies were conducted to verify the results of our DOI measurement method that is combined with dSiPM technology. In conclusion, our continuous DOI PET detector

  9. Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

    Directory of Open Access Journals (Sweden)

    E. Kasper

    2012-01-01

    Full Text Available Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV and highly doped Ge (0.73 eV. Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.

  10. Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates

    Science.gov (United States)

    Park, J. H.; Pepping, J.; Mukhortova, A.; Ketharanathan, S.; Kodama, R.; Zhao, J.; Hansel, D.; Velicu, S.; Aqariden, F.

    2016-09-01

    We report the development of high-performance and low-cost extended short-wavelength infrared (eSWIR) focal-plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates. High-quality n-type eSWIR HgCdTe (cutoff wavelength ˜2.68 μm at 77 K, electron carrier concentration 5.82 × 1015 cm-3) layers were grown on CdTe/Si substrates by MBE. High degrees of uniformity in composition and thickness were demonstrated over three-inch areas, and low surface defect densities (voids 9.56 × 101 cm-2, micro-defects 1.67 × 103 cm-2) were measured. This material was used to fabricate 320 × 256 format, 30 μm pitch FPAs with a planar device architecture using arsenic implantation to achieve p-type doping. The dark current density of test devices showed good uniformity between 190 K and room temperature, and high-quality eSWIR imaging from hybridized FPAs was obtained with a median dark current density of 2.63 × 10-7 A/cm2 at 193 K with a standard deviation of 1.67 × 10-7 A/cm2.

  11. APD arrays and large-area APDs via a new planar process

    CERN Document Server

    Farrell, R; Vanderpuye, K; Grazioso, R; Myers, R; Entine, G

    2000-01-01

    A fabrication process has been developed which allows the beveled-edge-type of avalanche photodiode (APD) to be made without the need for the artful bevel formation steps. This new process, applicable to both APD arrays and to discrete detectors, greatly simplifies manufacture and should lead to significant cost reduction for such photodetectors. This is achieved through a simple innovation that allows isolation around the device or array pixel to be brought into the plane of the surface of the silicon wafer, hence a planar process. A description of the new process is presented along with performance data for a variety of APD device and array configurations. APD array pixel gains in excess of 10 000 have been measured. Array pixel coincidence timing resolution of less than 5 ns has been demonstrated. An energy resolution of 6% for 662 keV gamma-rays using a CsI(T1) scintillator on a planar processed large-area APD has been recorded. Discrete APDs with active areas up to 13 cm sup 2 have been operated.

  12. Improvement of n-ZnO/p-Si photodiodes by embedding of silver nanoparticles

    International Nuclear Information System (INIS)

    Hu, Zhan-Shuo; Hung, Fei-Yi; Chang, Shoou-Jinn; Chen, Kuan-Jen; Tseng, Yi-Wei; Huang, Bohr-Ran; Lin, Bo-Cheng; Chou, Wei-Yang; Chang, Jay

    2011-01-01

    The photo-current of n-ZnO/p-Si heterojunction photodiodes was improved by embedding Ag nanoparticles in the interface (ZnO/nano-P Ag /p-Si), and the ratio between photo- and dark-current increased by about three orders more than that of a n-ZnO/p-Si specimen. The improvement in the photo-current resulted from the light scattering of embedded Ag nanoparticles. The I–V curve of n-ZnO/p-Si degraded after thermal treatment (A-ZnO/p-Si) because the silicon robbed the oxygen from ZnO to form amorphous silicon dioxide and left an oxygen vacancy. Notably, the properties of ZnO/nano-P Ag /p-Si were better in the time-dependent photoresponse under 10 V bias. Ag nanoparticles (15–20 nm) scattered the UV light randomly and increased the probability for the absorption of ZnO to enhance the properties of the photodiode.

  13. Low-cost amplifier for alpha detection with photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Domienikan, Cláudio; Costa, Priscila; Genezini, Frederico A.; Zahn, Guilherme S., E-mail: clanikan@ipen.br, E-mail: pcosta@ipen.br, E-mail: fredzini@ipen.br, E-mail: gzahn@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    A low-cost amplifier for Hamamatsu S3590-09 PIN photodiode to be used in alpha detection is presented. This amplifier consists basically of two circuits: a pulse preamplifier and a shaper-driver. The PIN photodiode is reverse-biased and connected to a charge preamplifier input. Incident alpha particles generate a small current pulse in the photodiode. The integrating circuit of the low noise preamplifier transforms current pulse into a voltage pulse with amplitude proportional to the charge carried by the current pulse. The shaper-driver consists of a differentiator and an integrator and is responsible for filtering and further amplifying the preamplifier signal, generating a NIM-compatible energy pulse. The performance of the set photodiode-amplifier was successively tested through the use of a {sup 243}Am radioactive source. The low-cost photodiode amplifier was designed and constructed at IPEN - CNEN/SP using national components and expertise. (author)

  14. Determination of the electron-hole pair creation energy for semiconductors from the spectral responsivity of photodiodes

    CERN Document Server

    Scholze, F; Kuschnerus, P; Rabus, H; Richter, M; Ulm, G

    2000-01-01

    Ionizing radiation can be detected by the measurement of the charge carriers produced in a detector. The improved semiconductor technology now allows detectors operating near the physical limits of the detector materials to be designed. The mean energy required for producing an electron-hole pair, W, is a material property of the semiconductor. Here, the determination of W from the spectral responsivity of photodiodes is demonstrated. Using spectrally dispersed synchrotron radiation, different types of semiconductor photodiodes have been examined in the UV-, VUV-, and soft X-ray spectral range. Their spectral responsivity was determined with relative uncertainties between 0.4% and 1% using a cryogenic electrical-substitution radiometer as primary detector standard. Results are presented for silicon n-on-p junction photodiodes and for GaAsP/Au Schottky diodes at room temperature. The investigations for silicon covered the complete spectral range from 3 to 1500 eV, yielding a constant value W=(3.66+-0.03) eV fo...

  15. Test and evaluation of infrared detectors and arrays; Proceedings of the Meeting, Orlando, FL, Mar. 27-29, 1989

    Science.gov (United States)

    Hoke, Forney M.

    Papers on the testing and evaluation of IR detectors and arrays are presented, covering topics such as a short wavelength IR test system, pulse height analysis, the use of an expert system for IR detector testing, low-background IR focal plane testing, electron beam testing, high performance silicide Schottky photodiodes, the SDI organization focal plane test program, the absorption cross section of arsenic in silicon, and long wavelength IR hybrids. Other topics include low background radiometric detector measurements, an ultralow background dewar for IR detector characterization studies, a computer assisted mosaic array test station, a configurable detector array test station, automated detector material characterization capabilities, and a test system for mercury cadmium telluride photoconductor arrays. Additional topics include ionization dosimetry measurements inside a dewar for linac electron and californium-252 neutron environments, a radiation test facility using a variable-flux electron beam source, automated visual inspection of IR focal plane arrays, a titanium cryostat for low temperature radiation effects studies, a low dose rate gamma test facility, and the test and evaluation of stability in IR staring focal plane arrays after nonuniformity correction.

  16. Self-Anchored Catalyst Interface Enables Ordered Via Array Formation from Submicrometer to Millimeter Scale for Polycrystalline and Single-Crystalline Silicon.

    Science.gov (United States)

    Kim, Jeong Dong; Kim, Munho; Kong, Lingyu; Mohseni, Parsian K; Ranganathan, Srikanth; Pachamuthu, Jayavel; Chim, Wai Kin; Chiam, Sing Yang; Coleman, James J; Li, Xiuling

    2018-03-14

    Defying text definitions of wet etching, metal-assisted chemical etching (MacEtch), a solution-based, damage-free semiconductor etching method, is directional, where the metal catalyst film sinks with the semiconductor etching front, producing 3D semiconductor structures that are complementary to the metal catalyst film pattern. The same recipe that works perfectly to produce ordered array of nanostructures for single-crystalline Si (c-Si) fails completely when applied to polycrystalline Si (poly-Si) with the same doping type and level. Another long-standing challenge for MacEtch is the difficulty of uniformly etching across feature sizes larger than a few micrometers because of the nature of lateral etching. The issue of interface control between the catalyst and the semiconductor in both lateral and vertical directions over time and over distance needs to be systematically addressed. Here, we present a self-anchored catalyst (SAC) MacEtch method, where a nanoporous catalyst film is used to produce nanowires through the pinholes, which in turn physically anchor the catalyst film from detouring as it descends. The systematic vertical etch rate study as a function of porous catalyst diameter from 200 to 900 nm shows that the SAC-MacEtch not only confines the etching direction but also enhances the etch rate due to the increased liquid access path, significantly delaying the onset of the mass-transport-limited critical diameter compared to nonporous catalyst c-Si counterpart. With this enhanced mass transport approach, vias on multistacks of poly-Si/SiO 2 are also formed with excellent vertical registry through the polystack, even though they are separated by SiO 2 which is readily removed by HF alone with no anisotropy. In addition, 320 μm square through-Si-via (TSV) arrays in 550 μm thick c-Si are realized. The ability of SAC-MacEtch to etch through poly/oxide/poly stack as well as more than half millimeter thick silicon with excellent site specificity for a wide

  17. Diamond photodiodes for x-ray application

    Energy Technology Data Exchange (ETDEWEB)

    Distel, James R [Los Alamos National Laboratory; Smedley, John [BNL; Keister, Jeffrey W [BNL; Muller, Erik [STONY BROOK UNIV.; Jordan - Sweet, Jean [WATSON RESEARCH CENTER; Bohon, Jen [CASE WESTERN RESERVE UNIV.; Dong, Bin [NON LANL

    2009-01-01

    Single crystal high purity CVD diamonds have been metallized and calibrated as photodiodes at the National Synchrotron Light Source (NSLS). Current mode responsivity measurements have been made over a wide range (0.2-28 keV) of photon energies across several beamlines. Linear response has been achieved over ten orders of magnitude of incident flux, along with uniform spatial response. A simple model of responsivity has been used to describe the results, yielding a value of 13.3 {+-} 0.5 eV for the mean pair creation energy. The responsivity vs. photon energy data show a dip for photon energies near the carbon edge (284 eV), indicating incomplete charge collection for carriers created less than one micron from the metallized layer.

  18. Alpha particles spectrometer with photodiode PIN

    International Nuclear Information System (INIS)

    Chacon R, A.; Hernandez V, R.; Hernandez D, V. M.; Vega C, H. R.; Ramirez G, J.

    2009-10-01

    The radiation propagates in form of electromagnetic waves or corpuscular radiation; if the radiation energy causes ionization in environment that crosses it is considered ionizing radiation. To detect radiation several detectors types are used, if the radiation are alpha particles are used detectors proportional type or trace elements. In this work the design results, construction and tests of an alpha particles spectrometer are presented, which was designed starting from a photodiode PIN type. The system design was simulated with a code for electronic circuits. With results of simulation phase was constructed the electronic phase that is coupled to a multichannel analyzer. The resulting electronic is evaluated analyzing the electronic circuit performance before an alphas triple source and alpha radiation that produce two smoke detectors of domestic use. On the tests phase we find that the system allows obtain, in a multichannel, the pulses height spectrum, with which we calibrate the system. (Author)

  19. Design of a linear detector array unit for high energy x-ray helical computed tomography and linear scanner

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jeong Tae; Park, Jong Hwan; Kim, Gi Yoon [Dept. of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon (Korea, Republic of); Kim, Dong Geun [Medical Imaging Department, ASTEL Inc., Seongnam (Korea, Republic of); Park, Shin Woong; Yi, Yun [Dept. of Electronics and Information Eng, Korea University, Seoul (Korea, Republic of); Kim, Hyun Duk [Research Center, Luvantix ADM Co., Ltd., Daejeon (Korea, Republic of)

    2016-11-15

    A linear detector array unit (LdAu) was proposed and designed for the high energy X-ray 2-d and 3-d imaging systems for industrial non-destructive test. Specially for 3-d imaging, a helical CT with a 15 MeV linear accelerator and a curved detector is proposed. the arc-shape detector can be formed by many LdAus all of which are arranged to face the focal spot when the source-to-detector distance is fixed depending on the application. An LdAu is composed of 10 modules and each module has 48 channels of CdWO{sub 4} (CWO) blocks and Si PIn photodiodes with 0.4 mm pitch. this modular design was made for easy manufacturing and maintenance. through the Monte carlo simulation, the CWO detector thickness of 17 mm was optimally determined. the silicon PIn photodiodes were designed as 48 channel arrays and fabricated with NTD (neutron transmutation doping) wafers of high resistivity and showed excellent leakage current properties below 1 nA at 10 V reverse bias. to minimize the low-voltage breakdown, the edges of the active layer and the guard ring were designed as a curved shape. the data acquisition system was also designed and fabricated as three independent functional boards; a sensor board, a capture board and a communication board to a Pc. this paper describes the design of the detectors (CWO blocks and Si PIn photodiodes) and the 3-board data acquisition system with their simulation results.

  20. Spiral silicon drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

    1988-01-01

    An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

  1. Comparison of SensL and Hamamatsu 4×4 channel SiPM arrays in gamma spectrometry with scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Grodzicka-Kobylka, M., E-mail: m.grodzicka@ncbj.gov.pl; Szczesniak, T.; Moszyński, M.

    2017-06-01

    The market of Silicon Photomultipliers (SiPMs) consists of many manufacturers that produce their detectors in different technology. Hamamatsu (Japan) and SensL (Ireland) seems to be the most popular companies that produce large SiPM arrays. The aim of this work is characterization and comparison of 4×4 channel SiPM arrays produced by these two producers. Both of the tested SiPMs are made in through-silicon via (TSV) technology, consist of 16, 3×3 mm avalanche photodiode (APD) cells and have fill factor slightly above 60%. The largest difference is a single APD cell size and hence total number of APD cells (55,424 for Hamamatsu, 76,640 for SensL). In the case of SensL SiPM, its spectral response characteristics is shifted slightly toward shorter wavelengths with maximum at 420 nm (450 nm for Hamamatsu). The presented measurements cover selection of the SiPM optimum operating voltage (in respect to energy resolution), verification of the excess noise factor and check of the linearity characteristics. Moreover, the gamma spectrometry with LSO, BGO and CsI:Tl scintillators together with pulse characteristics for these crystals (rise time and fall time) is reported, as well as temperature dependence. The presented measurements show better performance of the SensL array comparing to the Hamamatsu detector.

  2. Large area avalanche MRS-photodiodes for nuclear spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ermalitski, F A; Zalesski, V B

    1996-12-31

    Problems of application of avalanche photodiodes (APD) in readout systems of nuclear spectrometers are considered. APD`s with a large sensitive area of a diameter 1-5 mm and a high multiplication coefficient 200-1000 are created. MPS-photodiodes provide for the energy resolution 80% at temperature 231 K for detecting gamma-quanta with energy 662 keV. 4 refs.

  3. Microfabricated Multianalyte Sensor Arrays for Metabolite Monitoring

    National Research Council Canada - National Science Library

    Pishko, Michael V; Mugweru, Amos

    2005-01-01

    .... In this work we have taken advantage of silicon micro-fabrication technologies to develop implantable redundant microsensor arrays with glucose oxidase molecules immobilized in photopolymerized...

  4. Production of a square geometry Americium standard source for use with photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Priscila; Geraldo, Bianca; Raele, Marcus P.; Marumo, Júlio T.; Vicente, Roberto; Zahn, Guilherme S.; Genezini, Frederico A., E-mail: priscila3.costa@usp.br, E-mail: fredzini@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    In the development of a thermal neutron detector using a square photodiode and a thin boron film, a radioactive calibration source with the same geometry was needed. An americium-243 standard source was produced by electrodeposition aiming at the calibration of a PIN-type silicon photodiode with a detection area of 10 x 10 mm{sup 2}. To produce the samples two tests were performed. In the first test, a square stainless steel plate (10 x 10 mm{sup 2}) was fixed on the surface of the conventional plate, which was removed after deposition. To reduce the loss of activity of the source, in the second test nail polish was applied on the silver plate leaving only an area of 10 x 10 mm{sup 2} without varnish coating. Once the electrodeposition process was completed, the activity concentration measurement was performed by alpha particle spectrometry. The first method presented a lower activity when compared to the total activity of Am-243 added initially. For the second method, the total activity was concentrate in the exposed square region (without nail polish). The results showed that it is possible to obtain a square geometry source; furthermore, the surrounding nail polish was not contaminated by {sup 243}Am. The comparison of these two approaches indicated that the second method was more efficient as it was possible to concentrate all the americium activity in the delimited square area. (author)

  5. Application of avalanche photodiodes for the measurement of actinides by alpha liquid scintillation counting

    International Nuclear Information System (INIS)

    Reboli, A.

    2005-10-01

    Alpha emitters analysis using liquid scintillation spectroscopy is often used when sensitivity and fast samples preparation are the important points. A more extensive use of this technique is until now limited by its poor resolution compared to alpha particle spectroscopy with semiconductor detectors. To improve the resolution and thus promote this method for the measurement of actinides in environment, we have tested silicon avalanche photodiodes (APD) as new detectors for scintillation photons. The set-up consists of a large area avalanche photodiode (16 mm diameter) coupled to a thin vial containing alpha-emitters within a liquid scintillation cocktail. After optimization of several parameters like bias voltage, temperature, counting geometry and composition of the scintillating cocktail, energy resolutions have been found to be better than those obtained with standard photomultiplier tubes (PMT): 5% (200 keV FWHM) for 232 Th and 4.2% (240 keV FWHM) for 236 Pu. Our results show that the improvement is due to less fluctuations associated with light collection since the spatial response of APDs is more uniform than that of PMTs. The expected gain on quantum efficiency (80% for APDs instead of 25% for PMTs) is nullified by a corresponding increase on electronic noise and excess noise factor. Significant better results are foreseen by using green scintillators (450 - 550 nm wavelengths region) with larger Stokes-shift and blue-enhanced APDs which reach their maximum quantum efficiency in this region. (author)

  6. A fully integrated optical detector with a-Si:H based color photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Watty, Krystian; Merfort, Christian; Seibel, Konstantin; Schoeler, Lars; Boehm, Markus [Institute for Microsystem Technologies (IMT), University of Siegen, Hoelderlinstr. 3, 57076 Siegen (Germany)

    2010-03-15

    The fabrication of an electrophoresis separation microchip with monolithic integrated excitation light source and variospectral photodiodes for absorption detection is presented in this paper. Microchip based separation techniques are essential elements in the development of fully integrated micro-total analysis systems ({mu}-TAS). An integrated microfluidic device, like an application specific lab-on-microchip (ALM) (Seibel et al., in: MRS Spring Meeting, San Francisco, USA, 2005 1), includes all components, necessary to perform a chemical analysis on chip and it can be used as a stand-alone unit directly at the point of sampling. Variospectral diodes based on hydrogenated amorphous silicon (a-Si:H) technology allow for advanced optical detection schemes, because the spectral sensitivity of the devices can be tailored to fit the emission of specific fluorescent markers. Important features of a-Si:H variospectral photodiodes are a high dynamic range, a bias-tunable spectral sensitivity and a very good linearity for the separation of mixed color signals. Principle of ALM device. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  7. High-performance silicon nanowire bipolar phototransistors

    Science.gov (United States)

    Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

    2016-07-01

    Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

  8. Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Y.; Yun, Y. B. [Yonsei University, Seoul (Korea, Republic of); Ha, J. M. [Yonsei University, Seoul (Korea, Republic of); Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of); Lee, J. S.; Yoon, Y. S. [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of); Eun, J. W. [Namseoul University, Cheonan (Korea, Republic of)

    2012-05-15

    A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.

  9. Response of CMS avalanche photo-diodes to low energy neutrons

    Science.gov (United States)

    Brown, R. M.; Deiters, K.; Ingram, Q.; Renker, D.

    2012-12-01

    The response of the Avalanche Photo-diodes (APDs) installed in the CMS detector at the LHC to neutrons from 241AmBe and 252Cf sources is reported. Signals in size equivalent to those of up to 106 photo-electrons with the nominal APD gain are observed. Measurements with an APD with the protective epoxy coating removed and with the source placed behind the APD show that there is an important response due to recoil protons from neutron interactions with the hydrogen in the epoxy, in addition to signals from neutron interactions with the silicon of the diode. The effective gain of these signals is much smaller than the diode's nominal gain.

  10. A low-noise, wideband, integrated CMOS transimpedance preamplifier for photodiode applications

    International Nuclear Information System (INIS)

    Binkley, D.M.; Paulus, M.J.; Casey, M.E.; Rochelle, J.M.

    1992-01-01

    In this paper, a low-noise, wideband, integrated CMOS transimpedance preamplifier is presented for silicon avalanche photodiode (APD) applications. The preamplifier, fabricated in a standard 2μ CMOS technology, features a transimpedance gain of 45 kΩ, a risetime of 22 ns, a series noise of 1.6nV/Hz 1/2 , and a wideband equivalent input-noise current of 12 nA for a source capacitance of 12 pF. The measured 22 Na timing resolution of 9.2-ns FWHM and energy resolution of 22.4% FWHM for the RCA C30994 BGO/APD detector module coupled to the preamplifier is comparable to the performance reported using charge-sensitive preamplifiers. This illustrates that transimpedance preamplifiers should be considered for APD applications, especially where APD noise current dominates noise from feedback resistors in the 1--kΩ to 50-kΩ range

  11. High-power, ultralow-mass solar arrays: FY-77 solar arrays technology readiness assessment report, volume 2

    Science.gov (United States)

    Costogue, E. N.; Young, L. E.; Brandhorst, H. W., Jr.

    1978-01-01

    Development efforts are reported in detail for: (1) a lightweight solar array system for solar electric propulsion; (2) a high efficiency thin silicon solar cell; (3) conceptual design of 200 W/kg solar arrays; (4) fluorocarbon encapsulation for silicon solar cell array; and (5) technology assessment of concentrator solar arrays.

  12. First results of systematic studies done with silicon photomultipliers

    International Nuclear Information System (INIS)

    Bosio, C.; Gentile, S.; Kuznetsova, E.; Meddi, F.

    2008-01-01

    Multicell avalanche photodiode structure operated in Geiger mode usually referred as silicon photomultiplier is a new intensively developing technology for photon detection. Insensitivity to magnetic fields, low operation voltage and small size make silicon photomultipliers very attractive for high-energy physics, astrophysics and medical applications. The presented results are obtained during the first steps taken in order to develop a setup and measurement procedures which allow to compare properties of diverse samples of silicon photomultipliers available on market. The response to low-intensity light was studied for silicon photomultipliers produced by CPTA (Russia), Hamamatsu (Japan), ITC-irst (Italy) and SensL (Ireland).

  13. Dualband MW/LW Strained Layer Superlattice Focal Plane Arrays for Satellite-Based Wildfire Detection, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Infrared focal plane arrays (FPAs) based on Type-II strained layer superlattice (SLS) photodiodes have recently experienced significant advances. In Phase I we...

  14. Dualband MW/LW Strained Layer Superlattice Focal Plane Arrays For Satellite-Based Wildfire Detection, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Dualband focal plane arrays (FPAs) based on gallium-free Type-II strained layer superlattice (SLS) photodiodes have recently experienced significant advances. We...

  15. A compact, discrete CsI(Tl) scintillator/Si photodiode gamma camera for breast cancer imaging

    Energy Technology Data Exchange (ETDEWEB)

    Gruber, Gregory J. [Univ. of California, Berkeley, CA (United States)

    2000-01-01

    Recent clinical evaluations of scintimammography (radionuclide breast imaging) are promising and suggest that this modality may prove a valuable complement to X-ray mammography and traditional breast cancer detection and diagnosis techniques. Scintimammography, however, typically has difficulty revealing tumors that are less than 1 cm in diameter, are located in the medial part of the breast, or are located in the axillary nodes. These shortcomings may in part be due to the use of large, conventional Anger cameras not optimized for breast imaging. In this thesis I present compact single photon camera technology designed specifically for scintimammography which strives to alleviate some of these limitations by allowing better and closer access to sites of possible breast tumors. Specific applications are outlined. The design is modular, thus a camera of the desired size and geometry can be constructed from an array (or arrays) of individual modules and a parallel hole lead collimator for directional information. Each module consists of: (1) an array of 64 discrete, optically-isolated CsI(Tl) scintillator crystals 3 x 3 x 5 mm3 in size, (2) an array of 64 low-noise Si PIN photodiodes matched 1-to-1 to the scintillator crystals, (3) an application-specific integrated circuit (ASIC) that amplifies the 64 photodiode signals and selects the signal with the largest amplitude, and (4) connectors and hardware for interfacing the module with a motherboard, thereby allowing straightforward computer control of all individual modules within a camera.

  16. A compact, discrete CsI(Tl) scintillator/Si photodiode gamma camera for breast cancer imaging

    International Nuclear Information System (INIS)

    Gruber, Gregory J.

    2000-01-01

    Recent clinical evaluations of scintimammography (radionuclide breast imaging) are promising and suggest that this modality may prove a valuable complement to X-ray mammography and traditional breast cancer detection and diagnosis techniques. Scintimammography, however, typically has difficulty revealing tumors that are less than 1 cm in diameter, are located in the medial part of the breast, or are located in the axillary nodes. These shortcomings may in part be due to the use of large, conventional Anger cameras not optimized for breast imaging. In this thesis I present compact single photon camera technology designed specifically for scintimammography which strives to alleviate some of these limitations by allowing better and closer access to sites of possible breast tumors. Specific applications are outlined. The design is modular, thus a camera of the desired size and geometry can be constructed from an array (or arrays) of individual modules and a parallel hole lead collimator for directional information. Each module consists of: (1) an array of 64 discrete, optically-isolated CsI(Tl) scintillator crystals 3 x 3 x 5 mm 3 in size, (2) an array of 64 low-noise Si PIN photodiodes matched 1-to-1 to the scintillator crystals, (3) an application-specific integrated circuit (ASIC) that amplifies the 64 photodiode signals and selects the signal with the largest amplitude, and (4) connectors and hardware for interfacing the module with a motherboard, thereby allowing straightforward computer control of all individual modules within a camera

  17. Micro benchtop optics by bulk silicon micromachining

    Science.gov (United States)

    Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  18. Optimization of technique factors for a silicon diode array full-field digital mammography system and comparison to screen-film mammography with matched average glandular dose

    International Nuclear Information System (INIS)

    Berns, Eric A.; Hendrick, R. Edward; Cutter, Gary R.

    2003-01-01

    Contrast-detail experiments were performed to optimize technique factors for the detection of low-contrast lesions using a silicon diode array full-field digital mammography (FFDM) system under the conditions of a matched average glandular dose (AGD) for different techniques. Optimization was performed for compressed breast thickness from 2 to 8 cm. FFDM results were compared to screen-film mammography (SFM) at each breast thickness. Four contrast-detail (CD) images were acquired on a SFM unit with optimal techniques at 2, 4, 6, and 8 cm breast thicknesses. The AGD for each breast thickness was calculated based on half-value layer (HVL) and entrance exposure measurements on the SFM unit. A computer algorithm was developed and used to determine FFDM beam current (mAs) that matched AGD between FFDM and SFM at each thickness, while varying target, filter, and peak kilovoltage (kVp) across the full range available for the FFDM unit. CD images were then acquired on FFDM for kVp values from 23-35 for a molybdenum-molybdenum (Mo-Mo), 23-40 for a molybdenum-rhodium (Mo-Rh), and 25-49 for a rhodium-rhodium (Rh-Rh) target-filter under the constraint of matching the AGD from screen-film for each breast thickness (2, 4, 6, and 8 cm). CD images were scored independently for SFM and each FFDM technique by six readers. CD scores were analyzed to assess trends as a function of target-filter and kVp and were compared to SFM at each breast thickness. For 2 cm thick breasts, optimal FFDM CD scores occurred at the lowest possible kVp setting for each target-filter, with significant decreases in FFDM CD scores as kVp was increased under the constraint of matched AGD. For 2 cm breasts, optimal FFDM CD scores were not significantly different from SFM CD scores. For 4-8 cm breasts, optimum FFDM CD scores were superior to SFM CD scores. For 4 cm breasts, FFDM CD scores decreased as kVp increased for each target-filter combination. For 6 cm breasts, CD scores decreased slightly as k

  19. Study of a PIN photodiode as an ionizing radiation detector for aerospace use; Estudo de um fotodiodo PIN como detector de radiação ionizante para uso aeroespacial

    Energy Technology Data Exchange (ETDEWEB)

    Nogueira, S.F.L.; Claro, L.H.; Santos, J.A.; Junior, J.R.; Federico, C.A., E-mail: msetephanireis@hotmail.com [Instituto de Estudos Avançados (IEAv), São José dos Campos, SP (Brazil). Divisão de Física Aplicada

    2017-07-01

    This work aims to study the use of the COTS PIN photodiode with an active area of 7.5 mm{sup 2} as an ionizing radiation detector. The tests were performed with a {sup 60}Co source and with low activity radioisotopic sources of {sup 60}Co, {sup 152}Eu, {sup 137}Cs and {sup 241}Am. The results were obtained by analyzing the current response generated by the photodiodes as a function of an attenuated dose rate in silicon in the range of 0.55 to 11.54 Gy / h.

  20. Properties of the photodiode PiN as neutron detector

    International Nuclear Information System (INIS)

    Adamiec, G.; Iniguez, M.P.; Lorente, A.; Gallego, E.; Voytchev, M.

    2005-01-01

    The photodiode can be used to measure the ambient dose equivalent for an Am-Be source, as well placed in a paraffin sphere with LiF 6 converter as nude with a PE converter. The ratio between the counting rate and the ambient dose equivalent is linear in the two cases. The sensitivity of the diode with the converter 6 LiF is evaluated to 8.4 shocks by micro sievert by square centimeter of active surface of diode. The photodiode with the PE converter has a sensitivity lower of 2.1 shocks by micro sievert by square centimeter (for the Am-Be source) of active surface of diode. About the disadvantages, the disadvantage of photodiode inside the paraffin sphere is its size and weight; the disadvantage of the diode with the PE converter is its sensitivity to the orientation of the neutron flux and the necessity to calibrate for the source type. (N.C.)

  1. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  2. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  3. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

    Science.gov (United States)

    Marrs, Michael A; Raupp, Gregory B

    2016-07-26

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

  4. Impulse response measurement in the HgCdTe avalanche photodiode

    Science.gov (United States)

    Singh, Anand; Pal, Ravinder

    2018-04-01

    HgCdTe based mid-wave infrared focal plane arrays (MWIR FPAs) are being developed for high resolution imaging and range determination of distant camouflaged targets. Effect of bandgap grading on the response time in the n+/ν/p+ HgCdTe electron avalanche photodiode (e-APD) is evaluated using impulse response measurement. Gain normalized dark current density of 2 × 10-9 A/cm2 at low reverse bias for passive mode and 2 × 10-4 A/cm2 at -8 V for active mode is measured in the fabricated APD device, yielding high gain bandwidth product of 2.4 THZ at the maximum gain. Diffusion of carriers is minimized to achieve transit time limited impulse response by introducing composition grading in the HgCdTe epilayer. The noise equivalent photon performance less than one is achievable in the FPA that is suitable for active cum passive imaging applications.

  5. Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications

    Science.gov (United States)

    Sullivan, William, III; Beck, Jeffrey; Scritchfield, Richard; Skokan, Mark; Mitra, Pradip; Sun, Xiaoli; Abshire, James; Carpenter, Darren; Lane, Barry

    2015-01-01

    An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.

  6. Analysis of genetically modified organisms by pyrosequencing on a portable photodiode-based bioluminescence sequencer.

    Science.gov (United States)

    Song, Qinxin; Wei, Guijiang; Zhou, Guohua

    2014-07-01

    A portable bioluminescence analyser for detecting the DNA sequence of genetically modified organisms (GMOs) was developed by using a photodiode (PD) array. Pyrosequencing on eight genes (zSSIIb, Bt11 and Bt176 gene of genetically modified maize; Lectin, 35S-CTP4, CP4EPSPS, CaMV35S promoter and NOS terminator of the genetically modified Roundup ready soya) was successfully detected with this instrument. The corresponding limit of detection (LOD) was 0.01% with 35 PCR cycles. The maize and soya available from three different provenances in China were detected. The results indicate that pyrosequencing using the small size of the detector is a simple, inexpensive, and reliable way in a farm/field test of GMO analysis. Copyright © 2014 Elsevier Ltd. All rights reserved.

  7. SWIR HgCdTe avalanche photiode focal plane array performances evaluation

    Science.gov (United States)

    de Borniol, E.; Rothman, J.; Salveti, F.; Feautrier, P.

    2017-11-01

    One of the main challenges of modern astronomical instruments like adaptive optics (AO) systems or fringe trackers is to deal with the very low photons flux detection scenarios. The typical timescale of atmospheric turbulences being in the range of some tens of milliseconds, infrared wavefront sensors for AO systems needs frame rates higher than 1 KHz leading to integration times lower than 1 ms. This integration time associated with a low irradiance results in a few number of integrated photons per frame per pixel. To preserve the information coming from this weak signal, the focal plane array (FPA) has to present a low read out noise, a high quantum efficiency and a low dark current. Up to now, the output noise of high speed near infrared sensors is limited by the silicon read out circuit noise. The use of HgCdTe avalanche photodiodes with high gain at moderate reverse bias and low excess noise seems then a logical way to reduce the impact of the read noise on images signal to noise ratio. These low irradiance passive imaging applications with integration times in the millisecond range needs low photodiode dark current and low background current. These requirements lead to the choice of the photodiode cut off wavelength. The short wave infrared (SWIR) around 3 μm is a good compromise between the gain that can be obtain for a given APD bias and the background and dark current. The CEA LETI HgCdTe APD technology, and a fine analysis of the gain curve characteristic are presented in [1] and won't be detailed here. The response time of the APD is also a key factor for a high frame rate FPA. This parameter has been evaluated in [2] and the results shows cut off frequencies in the GHz range. In this communication we report the performances of a SWIR APD FPA designed and fabricated by CEA LETI and SOFRADIR for astrophysical applications. This development was made in the frame of RAPID, a 4 years R&D project funded by the French FUI (Fond Unique Interministériel). This

  8. Miniature silicon diode matrix-detector for in vivo measurement of 133xenon disappearance in the canine myocardium following local tissue injection

    DEFF Research Database (Denmark)

    Svendsen, Jesper Hastrup; Rasmussen, H B; Damgaard, Y

    1992-01-01

    recording appearing from the gamma-energy of the photopeak. The detector matrix concept allows elimination of motion artefacts and indicator distribution in the myocardial tissue. Due to the uniformity and low cost of Si-diodes the perspective may be the introduction as a disposable transducer useful during......After local tissue depositioning of 133Xenon (133Xe) the regional washout is usually registered by a NaI(Tl) detector. The residual radioactivity of 133Xe is usually measured at its 81 keV photopeak. However, using small Silicon (Si) photodiodes it is feasible to measure only the low-energy...... activity in the X-ray energy range. In the myocardium of open chest dogs 133Xe washout measurements by a matrix of Si diodes composed in a 4 x 4 array and a conventional NaI(Tl) detector were carried out simultaneously. Fourteen separate pairs of measurements were performed in 3 dogs. When the Si...

  9. Laser-zone Growth in a Ribbon-to-ribbon (RTR) Process Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

    Science.gov (United States)

    Baghdadi, A.; Gurtler, R. W.; Legge, R.; Sopori, B.; Rice, M. J.; Ellis, R. J.

    1979-01-01

    A technique for growing limited-length ribbons continually was demonstrated. This Rigid Edge technique can be used to recrystallize about 95% of the polyribbon feedstock. A major advantage of this method is that only a single, constant length silicon ribbon is handled throughout the entire process sequence; this may be accomplished using cassettes similar to those presently in use for processing Czochralski waters. Thus a transition from Cz to ribbon technology can be smoothly affected. The maximum size being considered, 3 inches x 24 inches, is half a square foot, and will generate 6 watts for 12% efficiency at 1 sun. Silicon dioxide has been demonstrated as an effective, practical diffusion barrier for use during the polyribbon formation.

  10. Silicon Ingot Casting - Heat Exchanger Method (HEM). Multi-Wire Slicing - Fixed Abrasive Slicing Technique (Fast). Phase 4 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-Cost Solar Array Project

    Science.gov (United States)

    Schmid, F.

    1981-01-01

    The crystallinity of large HEM silicon ingots as a function of heat flow conditions is investigated. A balanced heat flow at the bottom of the ingot restricts spurious nucleation to the edge of the melted-back seed in contact with the crucible. Homogeneous resistivity distribution over all the ingot has been achieved. The positioning of diamonds electroplated on wirepacks used to slice silicon crystals is considered. The electroplating of diamonds on only the cutting edge is described and the improved slicing performance of these wires evaluated. An economic analysis of value added costs of HEM ingot casting and band saw sectioning indicates the projected add on cost of HEM is well below the 1986 allocation.

  11. Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Beibei; Yu, Hongtao; Quan, Xie, E-mail: quanxie@dlut.edu.cn; Chen, Shuo

    2014-11-15

    Highlights: • g-C{sub 3}N{sub 4}, as an oxygen free and metal free protective material for Si, was proposed. • g-C{sub 3}N{sub 4} nanosheets wrapped Si nanowire array was synthesized. • SiNW/g-C{sub 3}N{sub 4} exhibited enhancement of photoelectrochemical stability and photocurrent. - Abstract: In order to inhibit the oxidation of Si materials in aqueous solution, Si nanowire array was wrapped by ultra-thin g-C{sub 3}N{sub 4} nanosheets via an electrophoresis process. Scanning electron microscopy and transmission electron microscopy images showed that g-C{sub 3}N{sub 4} nanosheets were evenly distributed on the surface of Si nanowire array. X-ray diffraction patterns indicated that Si nanowire array/g-C{sub 3}N{sub 4} nanosheets were composed of Si (4 0 0 crystal plane) and g-C{sub 3}N{sub 4} (0 0 2 and 1 0 0 crystal planes). The cyclic voltammetry curves revealed that the corrosion of Si nanowire array was restrained under the protection of g-C{sub 3}N{sub 4} nanosheets. Furthermore, the photocurrent density of Si nanowire array/g-C{sub 3}N{sub 4} nanosheets increased by nearly 3 times compared to that of bare Si nanowire array due to the effective charge separation caused by the built-in electric field at the interface. This work will facilitate the applications of Si materials in aqueous solution, such as solar energy harvest and photocatalytic pollution control.

  12. Visible light photodiodes and photovoltages from detonation nanodiamonds

    Czech Academy of Sciences Publication Activity Database

    Rezek, Bohuslav; Stehlík, Štěpán; Kromka, Alexander; Arnault, J.-C.; Weis, M.; Jakabovič, J.

    2016-01-01

    Roč. 1, č. 14 (2016), s. 971-975 ISSN 2059-8521 R&D Projects: GA ČR GA15-01809S Institutional support: RVO:68378271 Keywords : nanodiamond * photodiode Subject RIV: BM - Solid Matter Physics ; Magnetism

  13. Optical fibers and avalanche photodiodes for scintillator counters

    International Nuclear Information System (INIS)

    Borenstein, S.R.; Palmer, R.B.; Strand, R.C.

    1980-01-01

    Fine hodoscopes can be made of new scintillating optical fibers and one half inch end-on PMT's. An avalanche photodiode with small size and immunity to magnetic fields remains as a tempting new device to be proven as a photodetector for the fibers

  14. Linear self-assembly and grafting of gold nanorods into arrayed micrometer-long nanowires on a silicon wafer via a combined top-down/bottom-up approach.

    Science.gov (United States)

    Lestini, Elena; Andrei, Codrin; Zerulla, Dominic

    2018-01-01

    Macroscopically long wire-like arrangements of gold nanoparticles were obtained by controlled evaporation and partial coalescence of an aqueous colloidal solution of capped CTAB-Au nanorods onto a functionalised 3-mercaptopropyl trimethoxysilane (MPTMS) silicon substrate, using a removable, silicon wafer with a hydrophobic surface that serves as a "handrail" for the initial nanorods' linear self-assembly. The wire-like structures display a quasi-continuous pattern by thermal annealing of the gold nanorods when the solvent (i.e. water) is evaporated at temperatures rising from 20°C to 140°C. Formation of both single and self-replicating parallel 1D-superstructures consisting of two or even three wires is observed and explained under such conditions.

  15. Piezoelectric transducer array microspeaker

    KAUST Repository

    Carreno, Armando Arpys Arevalo

    2016-12-19

    In this paper we present the fabrication and characterization of a piezoelectric micro-speaker. The speaker is an array of micro-machined piezoelectric membranes, fabricated on silicon wafer using advanced micro-machining techniques. Each array contains 2n piezoelectric transducer membranes, where “n” is the bit number. Every element of the array has a circular shape structure. The membrane is made out four layers: 300nm of platinum for the bottom electrode, 250nm or lead zirconate titanate (PZT), a top electrode of 300nm and a structural layer of 50

  16. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  17. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  18. Silicon photonic dynamic optical channel leveler with external feedback loop.

    Science.gov (United States)

    Doylend, J K; Jessop, P E; Knights, A P

    2010-06-21

    We demonstrate a dynamic optical channel leveler composed of a variable optical attenuator (VOA) integrated monolithically with a defect-mediated photodiode in a silicon photonic waveguide device. An external feedback loop mimics an analog circuit such that the photodiode directly controls the VOA to provide blind channel leveling within +/-1 dB across a 7-10 dB dynamic range for wavelengths from 1530 nm to 1570 nm. The device consumes approximately 50 mW electrical power and occupies a 6 mm x 0.1 mm footprint per channel. Dynamic leveling is accomplished without tapping optical power from the output path to the photodiode and thus the loss penalty is minimized.

  19. Silicon Ingot Casting - Heat Exchanger Method Multi-wire Slicing - Fixed Abrasive Slicing Technique. Phase 3 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-cost Solar Array Project

    Science.gov (United States)

    Schmid, F.; Khattak, C. P.

    1979-01-01

    Several 20 cm diameter silicon ingots, up to 6.3 kg. were cast with good crystallinity. The graphite heat zone can be purified by heating it to high temperatures in vacuum. This is important in reducing costs and purification of large parts. Electroplated wires with 45 um synthetic diamonds and 30 um natural diamonds showed good cutting efficiency and lifetime. During slicing of a 10 cm x 10 cm workpiece, jerky motion occurred in the feed and rocking mechanisms. This problem is corrected and modifications were made to reduce the weight of the bladeheat by 50%.

  20. Low cost silicon solar array project. Task 1: Establishment of the feasibility of a process capable of low cost, high volume production of silane, SiH4

    Science.gov (United States)

    Breneman, W. C.; Mui, J. Y. P.

    1976-01-01

    The kinetics of the redistribution of dichlorosilane and trichlorosilane vapor over a tertiary amine ion exchange resin catalyst were investigated. The hydrogenation of SiCl4 to form HSiCl3 and the direct synthesis of H2SiCl2 from HCl gas and metallurgical silicon metal were also studied. The purification of SiH4 using activated carbon adsorbent was studied along with a process for storing SiH4 absorbed on carbon. The latter makes possible a higher volumetric efficiency than compressed gas storage. A mini-plant designed to produce ten pounds per day of SiH4 is described.

  1. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  2. The 8{pi} miniball charged-particle detector array

    Energy Technology Data Exchange (ETDEWEB)

    Ball, G C; Galindo-Uribarri, A; Andrews, H R; Bray, N C; Lori, J D; Radford, D C; Smith, L V; Tapp, G A; Ward, D [Atomic Energy of Canada Ltd., Chalk River, ON (Canada). Chalk River Nuclear Labs.; Drake, T E [Toronto Univ., ON (Canada). Dept. of Physics; Waddington, J C [McMaster Univ., Hamilton, ON (Canada). Dept. of Physics

    1992-08-01

    A modular miniature array of 24 CsI(Tl) crystals (0.5 cm) thick coupled to large area photodiodes has been constructed to operate inside the 8{pi} spectrometer. The array was designed to have good resolution, high efficiency, and adequate granularity for detecting light charged particles emitted in coincidence with the gamma rays from the decay of high-spin states populated in heavy-ion fusion-evaporation reactions. 17 refs., 2 tabs., 3 figs.

  3. Analysis and modeling of optical crosstalk in InP-based Geiger-mode avalanche photodiode FPAs

    Science.gov (United States)

    Chau, Quan; Jiang, Xudong; Itzler, Mark A.; Entwistle, Mark; Piccione, Brian; Owens, Mark; Slomkowski, Krystyna

    2015-05-01

    Optical crosstalk is a major factor limiting the performance of Geiger-mode avalanche photodiode (GmAPD) focal plane arrays (FPAs). This is especially true for arrays with increased pixel density and broader spectral operation. We have performed extensive experimental and theoretical investigations on the crosstalk effects in InP-based GmAPD FPAs for both 1.06-μm and 1.55-μm applications. Mechanisms responsible for intrinsic dark counts are Poisson processes, and their inter-arrival time distribution is an exponential function. In FPAs, intrinsic dark counts and cross talk events coexist, and the inter-arrival time distribution deviates from purely exponential behavior. From both experimental data and computer simulations, we show the dependence of this deviation on the crosstalk probability. The spatial characteristics of crosstalk are also demonstrated. From the temporal and spatial distribution of crosstalk, an efficient algorithm to identify and quantify crosstalk is introduced.

  4. Radiated power measurement with AXUV photodiodes in EAST tokamak

    International Nuclear Information System (INIS)

    Duan Yanmin; Hu Liqun; Du Wei; Mao Songtao; Chen Kaiyun; Zhang Jizhong

    2013-01-01

    The fast bolometer diagnostic system for absolute radiated power measurement on EAST tokamak is introduced, which is based on the absolute extreme ultraviolet (AXUV) photodiodes. The relative calibration of AXUV detectors is carried out using X-ray tube and standard luminance source in order to evaluate the sensitivity degradation caused by cumulative radiation damage during experiments. The calibration result shows a 23% sensitivity decrease in the X-ray range for the detector suffering ∼27000 discharges, but the sensitivity for the visible light changes little. The radiated power measured by AXUV photodiodes is compared with that measured by resistive bolometer. The total radiated power in main plasma deduced from AXUV detector is lower a factor of 1∼4 than that deduced from resistive bolometer. Some typical measurement results are also shown in this article. (author)

  5. Response of commercial photodiodes for application in alpha spectrometry

    International Nuclear Information System (INIS)

    Ferreira Filho, Alfredo Lopes

    1998-06-01

    The use of semiconductor detector for ionizing radiations spectrometry and dosimetry has been growing in the last years due to its characteristics of fast response, good efficiency for unit of volume and excellent resolution. Since the working principle of a semiconductor detector is identical to that of the semiconductor junctions of commercial electronic devices, a study was carried out on the PIN-photodiodes response, aiming at set up an alpha spectrometry system of low cost and easy acquisition. The tested components have the following characteristics: active area varying between 13.2 and 25 mm 2 , window of thickness equal or lower than 57 mg/cm 2 , depletion area with depth ranging from 10 to 300 μm and junction capacitance of 16 to 20 pF.Am-241, Cm-244, U-233 and Np-237 alpha sources produced by electrodeposition were used to evaluate the response of the devices as a function of the radiation energy. The results have shown a linear response of the photodiodes with the incident alpha particle energy. The resolution varied from 1.6% to 0.45% and the better detection efficiency found was about 7.2. The low cost of the photodiodes and the excellent results obtained at room temperature make such components very attractive for teaching purposes for environmental monitoring. (author)

  6. Novel micropixel avalanche photodiodes (MAPD) with super high pixel density

    International Nuclear Information System (INIS)

    Anfimov, N.; Chirikov-Zorin, I.; Dovlatov, A.; Gavrishchuk, O.; Guskov, A.; Khovanskiy, N.; Krumshtein, Z.; Leitner, R.; Meshcheryakov, G.; Nagaytsev, A.; Olchevski, A.; Rezinko, T.; Sadovskiy, A.; Sadygov, Z.; Savin, I.; Tchalyshev, V.; Tyapkin, I.; Yarygin, G.; Zerrouk, F.

    2011-01-01

    In many detectors based on scintillators the photomultiplier tubes (PMTs) are used as photodetectors. At present photodiodes are finding wide application. Solid state photodetectors allow operation in strong magnetic fields that are often present in applications, e.g. some calorimeters operating near magnets, combined PET and MRT, etc. The photon detection efficiency (PDE) of photodiodes may reach values a few times higher than that of PMTs. Also, they are rigid, compact and have relatively low operating voltage. In the last few years Micropixel Avalanche PhotoDiodes (MAPD) have been developed and started to be used. The MAPD combines a lot of advantages of semiconductor photodetectors and has a high gain, which is close to that of the PMT. Yet, they have some disadvantages, and one of them is a limited dynamic range that corresponds to a total number of pixels. The novel deep microwell MAPD with high pixel density produced by the Zecotek Company partially avoids this disadvantage. In this paper characteristics of these photodetectors are presented in comparison with the PMT characteristics. The results refer to measurements of the gain, PDE, cross-talks, photon counting and applications: beam test results of two different 'Shashlyk' EM calorimeters for COMPASS (CERN) and NICA-MPD (JINR) with the MAPD readout and a possibility of using the MAPD in PET.

  7. Amplifiers dedicated for large area SiC photodiodes

    Science.gov (United States)

    Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.

    2016-09-01

    Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

  8. Novel micropixel avalanche photodiodes (MAPD) with superhigh pixel density

    International Nuclear Information System (INIS)

    Anfimov, N.; Chirikov-Zorin, I.; Dovlatov, A.

    2010-01-01

    In many detectors based on scintillators the photomultiplier tubes (PMTs) are used as photodetectors. At present photodiodes are finding wide application. Solid state photodetectors allow operation in strong magnetic fields that are often present in applications, e.g., some calorimeters operating near magnets, combined PET and MRT, etc. The photon detection efficiency (PDE) of photodiodes may reach values a few times higher than that of PMTs. Also, they are rigid, compact and have relatively low operating voltage. In the last few years Micropixel Avalanche PhotoDiodes (MAPDs) have been developed and started to be used. The MAPD combines a lot of advantages of semiconductor photodetectors and has a high gain, which is close to that of the PMT. Yet, they have some disadvantages, and one of them is a limited dynamic range that corresponds to a total number of pixels. The novel deep microwell MAPD with high pixel density produced by Zecotek Company partially avoids this disadvantage. In this paper characteristics of these photodetectors are presented in comparison with the PMT characteristics. The results refer to measurements of the gain, PDE, cross-talks, photon counting and applications: beam test results of two different 'Shashlyk' EM calorimeters for COMPASS (CERN) and NICA-MPD (JINR) with the MAPD readout and a possibility of using the MAPD in PET

  9. Progress in the use of avalanche photodiodes for readout for calorimeters

    International Nuclear Information System (INIS)

    Fenker, H.; Morgan, K.; Regan, T.

    1991-09-01

    During the past year the Superconducting Super Collider Tracking Group has progressed from acquisition of its first avalanche photodiode (APD) to installation of a 96-channel array of the devices. The work was motivated by the desire to learn how to use APDs as the sensitive elements in a fiber tracking detector, moderated by the presence of limited resources and the absence of activity within groups outside the SSC Laboratory on such a project. We chose, therefore, to team up with an ongoing research effort which intended to evaluate both pre-shower and shower-maximum detectors and various means of sensing the light produced. The pre-shower detector is made of layers of scintillating fibers similar to a fiber tracker. The shower-maximum detector uses optical fibers to transmit the light from scintillating plates to the readout devices. Our contribution has been to develop the APD array for use in this test from concept to operation. Currently, the equipment is installed in Fermilab's MP beamline awaiting delivery to the final 36 APDs and exposure to the beam. 9 refs., 18 figs

  10. The use of cosmic-ray muons in the energy calibration of the Beta-decay Paul Trap silicon-detector array

    Energy Technology Data Exchange (ETDEWEB)

    Hirsh, T. Y.; Perez Galvan, A.; Burkey, M.; Aprahamian, A.; Buchinger, F.; Caldwell, S.; Clark, J. A.; Gallant, A.; Heckmaier, E.; Levand, A. F.; Savard, G.

    2018-04-01

    This article presents an approach to calibrate the energy response of double-sided silicon strip detectors (DSSDs) for low-energy nuclear-science experiments by utilizing cosmic-ray muons. For the 1-mm-thick detectors used with the Beta-decay Paul Trap, the minimum-ionizing peak from these muons provides a stable and time-independent in situ calibration point at around 300 keV, which supplements the calibration data obtained above 3 MeV from sources. The muon-data calibration is achieved by comparing experimental spectra with detailed Monte Carlo simulations performed using GEANT4 and CRY codes. This additional information constrains the calibration at lower energies, resulting in improvements in quality and accuracy.

  11. Infrared to visible image up-conversion using optically addressed spatial light modulator utilizing liquid crystal and InGaAs photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Solodar, A., E-mail: asisolodar@gmail.com; Arun Kumar, T.; Sarusi, G.; Abdulhalim, I. [Department of Electro-Optics Engineering and The Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Beer Sheva 84105 (Israel)

    2016-01-11

    Combination of InGaAs/InP heterojunction photodetector with nematic liquid crystal (LC) as the electro-optic modulating material for optically addressed spatial light modulator for short wavelength infra-red (SWIR) to visible light image conversion was designed, fabricated, and tested. The photodetector layer is composed of 640 × 512 photodiodes array based on heterojunction InP/InGaAs having 15 μm pitch on InP substrate and with backside illumination architecture. The photodiodes exhibit extremely low, dark current at room temperature, with optimum photo-response in the SWIR region. The photocurrent generated in the heterojunction, due to the SWIR photons absorption, is drifted to the surface of the InP, thus modulating the electric field distribution which modifies the orientation of the LC molecules. This device can be attractive for SWIR to visible image upconversion, such as for uncooled night vision goggles under low ambient light conditions.

  12. Protein Functionalized Nanodiamond Arrays

    Directory of Open Access Journals (Sweden)

    Liu YL

    2010-01-01

    Full Text Available Abstract Various nanoscale elements are currently being explored for bio-applications, such as in bio-images, bio-detection, and bio-sensors. Among them, nanodiamonds possess remarkable features such as low bio-cytotoxicity, good optical property in fluorescent and Raman spectra, and good photostability for bio-applications. In this work, we devise techniques to position functionalized nanodiamonds on self-assembled monolayer (SAMs arrays adsorbed on silicon and ITO substrates surface using electron beam lithography techniques. The nanodiamond arrays were functionalized with lysozyme to target a certain biomolecule or protein specifically. The optical properties of the nanodiamond-protein complex arrays were characterized by a high throughput confocal microscope. The synthesized nanodiamond-lysozyme complex arrays were found to still retain their functionality in interacting with E. coli.

  13. Silicon CMOS photonics platform for enabling high-speed DQPSK transceivers

    NARCIS (Netherlands)

    Sanchis, P.; Aamer, M.; Brimont, A.; Gutierrez, A.M.; Sotiropoulos, N.; Waardt, de H.; Thomson, D.J.; Gardes, F.Y.; Reed, G.T.; Ribaud, K.; Grosse, P.; Hartmann, J. M.; Fedeli, J.M.; Marris-Morini, D.; Cassan, E.; Vivien, L.; Vermeulen, D.; Roelkens, G.; Hakansson, A.

    2013-01-01

    In this work we review the results obtained under the framework of FP7-HELIOS project for integrated DQPSK transceivers in silicon photonics. A differential DQPSK receiver with balanced zero biased Germanium photodiodes has been demonstrated at 10Gbit/s with an error floor around 10-15. Furthermore,

  14. Evaluation of BPW-34 photodiode answer for 10 MeV electron dosimetry

    International Nuclear Information System (INIS)

    Khoury, H.J.; Melo, F.A.; Hazin, C.A.

    1992-01-01

    The viability of commercial photodiodes used for dosimetry of high energy electron beams was studied. The measures were made in a linear accelerators of 10 MeV, using the BPW-34 photodiode. The average energy of electrons on phantom surface and their average range were determined with the photodiode, and the results were compared with the obtained with a ionization chamber of parallel plate. (C.G.C.)

  15. Silicon Photo-Multiplier Radiation Hardness Tests with a White Neutron Beam

    International Nuclear Information System (INIS)

    Montanari, A.; Tosi, N.; Pietropaolo, A.; Andreotti, M.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Luppi, E.; Cotta Ramusino, A.; Malaguti, R.; Santoro, V.; Tellarini, G.; Tomassetti, L.; De Donato, C.; Reali, E.

    2013-06-01

    We report radiation hardness tests performed, with a white neutron beam, at the Geel Electron Linear Accelerator in Belgium on silicon Photo-Multipliers. These are semiconductor photon detectors made of a square matrix of Geiger-Mode Avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated integrating up to about 6.2 x 10 9 1-MeV-equivalent neutrons per cm 2 . (authors)

  16. ZnO/Al{sub 2}O{sub 3} core/shell nanorods array as excellent anti-reflection layers on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lung, Chun-Ming; Wang, Wei-Cheng [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, 10617, Taiwan (China); Chen, Ching-Hsiang [Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei, 106, Taiwan (China); Chen, Liang-Yih, E-mail: sampras@mail.ntust.edu.tw [Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei, 106, Taiwan (China); Chen, Miin-Jang, E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, 10617, Taiwan (China)

    2016-09-01

    A simple, low-temperature hydrothermal method and atomic layer deposition (ALD) were used to fabricate ZnO nanostructures as subwavelength-structure antireflection layers (SWS ARLs) on Si solar cells. ZnO seed layers with wafer-scale uniformity were prepared, and ALD was used to reproduce two types of ZnO-based structures, nanorod arrays (NRAs) and nanotip arrays (NTAs). The study examined diammonium phosphate concentrations during growth, conducted simulations based on three-dimensional finite-difference time-domain and reflection analyses, performed X-ray diffractometer, field-emission scanning electron microscope, and high-resolution transmission electron microscope characterizations, measured total reflectance spectra by using a spectrophotometer with integrated spheres, and ran solar simulations to determine the efficiency of the Si solar cells. Coating the ZnO NTAs on the Si solar cells yielded a low total reflectance over a broad band range and produced omnidirectional light scattering on the cells, causing incident light to have a shallow penetration depth near the p–n junction and leading to an increase in short current density ({sub Jsc}). Coating the ZnO NTAs with an Al{sub 2}O{sub 3} shell induced continuous variation in the refractive index, further decreasing the total reflectance to approximately 5.5%, and protected the ZnO NTAs from the harmful acidic environment. Significantly increasing the J{sub sc} and η levels of the Si solar cells, the Al{sub 2}O{sub 3}@ZnO-NTA antireflection structure produced a high efficiency of 17.79%. Its superior performance, including low and wideband reflectance, a low process temperature, and a significant increase in efficiency, indicates the potential of this antireflective structure for enhancing solar cell efficiency in photovoltaic devices. - Highlights: • ZnO nanotip arrays were synthesized by hydrothermal methods as antireflection layer. • The total reflectance is low around 7.8% from 400 nm to 1000

  17. Single-photon semiconductor photodiodes for distributed optical fiber sensors: state of the art and perspectives

    Science.gov (United States)

    Ripamonti, Giancarlo; Lacaita, Andrea L.

    1993-03-01

    The extreme sensitivity and time resolution of Geiger-mode avalanche photodiodes (GM- APDs) have already been exploited for optical time domain reflectometry (OTDR). Better than 1 cm spatial resolution in Rayleigh scattering detection was demonstrated. Distributed and quasi-distributed optical fiber sensors can take advantage of the capabilities of GM-APDs. Extensive studies have recently disclosed the main characteristics and limitations of silicon devices, both commercially available and developmental. In this paper we report an analysis of the performance of these detectors. The main characteristics of GM-APDs of interest for distributed optical fiber sensors are briefly reviewed. Command electronics (active quenching) is then introduced. The detector timing performance sets the maximum spatial resolution in experiments employing OTDR techniques. We highlight that the achievable time resolution depends on the physics of the avalanche spreading over the device area. On the basis of these results, trade-off between the important parameters (quantum efficiency, time resolution, background noise, and afterpulsing effects) is considered. Finally, we show first results on Germanium devices, capable of single photon sensitivity at 1.3 and 1.5 micrometers with sub- nanosecond time resolution.

  18. Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode.

    Science.gov (United States)

    Martinez, Nicholas J D; Gehl, Michael; Derose, Christopher T; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2017-07-10

    We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.

  19. Initial characterization of a BGO-photodiode detector for high resolution positron emission tomography

    International Nuclear Information System (INIS)

    Derenzo, S.E.

    1983-11-01

    Spatial resolution in positron emission tomography is currently limited by the resolution of the detectors. This work presents the initial characterization of a detector design using small bismuth germanate (BGO) crystals individually coupled to silicon photodiodes (SPDs) for crystal identification, and coupled in groups to phototubes (PMTs) for coincidence timing. A 3 mm x 3 mm x 3 mm BGO crystal coupled only to an SPD can achieve a 511 keV photopeak resolution of 8.7% FWHM at -150 0 C, using a pulse peaking time of 10 μs. When two 3 mm x 3 mm x 15 mm BGO crystals are coupled individually to SPDs and also coupled to a common 14 mm diam PMT, the SPDs detect the 511 keV photopeak with a resolution of 30% FWHM at -76 0 C. In coincidence with an opposing 3 mm wide BGO crystal, the SPDs are able to identify the crystal of interaction with good signal-to-noise ratio, and the detector pair resolution is 2 mm FWHM. 32 references, 7 figures, 3 tables

  20. Controlled growth of periodically aligned copper-silicide nanocrystal arrays on silicon directed by laser-induced periodic surface structures (LIPSS)

    Science.gov (United States)

    Nürnberger, Philipp; Reinhardt, Hendrik M.; Rhinow, Daniel; Riedel, René; Werner, Simon; Hampp, Norbert A.

    2017-10-01

    In this paper we introduce a versatile tool for the controlled growth and alignment of copper-silicide nanocrystals. The method takes advantage of a unique self-organization phenomenon denoted as laser-induced periodic surface structures (LIPSS). Copper films (3 ± 0.2 nm) are sputter-deposited onto single crystal silicon (100) substrates with a thin oxide layer (4 ± 0.2 nm), and subsequently exposed to linearly polarized nanosecond laser pulses (τ ≈ 6 ns) at a central wavelength of 532 nm. The irradiation triggers dewetting of the Cu film and simultaneous formation of periodic Cu nanowires (LIPSS), which partially penetrate the oxide layer to the Si substrate. These LIPSS act as nucleation centers for the growth of Cu-Si crystals during thermal processing at 500 °C under forming gas 95/5 atmosphere. Exemplified by our model system Cu/SiO2/Si, LIPSS are demonstrated to facilitate the diffusion reaction between Cu and underlying Si. Moreover, adjustment of the laser polarization allows us to precisely control the nanocrystal alignment with respect to the LIPSS orientation. Potential applications and conceivable alternatives of this process are discussed.

  1. Preparation of anodic aluminum oxide (AAO) nano-template on silicon and its application to one-dimensional copper nano-pillar array formation

    International Nuclear Information System (INIS)

    Shen, Lan; Ali, Mubarak; Gu, Zhengbin; Min, Bonggi; Kim, Dongwook; Park, Chinho

    2013-01-01

    Anodized aluminum oxide (AAO) nanotemplates were prepared using the Al/Si substrates with an aluminum layer thickness of about 300 nm. A two-step anodization process was used to prepare an ordered porous alumina nanotemplate, and the pores of various sizes and depths were constructed electrochemically through anodic oxidation. The optimum morphological structure for large area application was constructed by adjusting the applied potential, temperature, time, and electrolyte concentration. SEM investigations showed that hexagonal-close-packed alumina nano-pore arrays were nicely constructed on Si substrate, having smooth wall morphologies and well-defined diameters. It is also reported that one dimensional copper nanopillars can be fabricated using the tunable nanopore sized AAO/Si template, by controlling the copper deposition process

  2. Photovoltaic cell array

    Science.gov (United States)

    Eliason, J. T. (Inventor)

    1976-01-01

    A photovoltaic cell array consisting of parallel columns of silicon filaments is described. Each fiber is doped to produce an inner region of one polarity type and an outer region of an opposite polarity type to thereby form a continuous radial semi conductor junction. Spaced rows of electrical contacts alternately connect to the inner and outer regions to provide a plurality of electrical outputs which may be combined in parallel or in series.

  3. Compact and multi-view solid state neutral particle analyzer arrays on National Spherical Torus Experiment-Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Liu, D., E-mail: deyongl@uci.edu; Heidbrink, W. W.; Hao, G. Z.; Zhu, Y. B. [Departments of Physics and Astronomy, University of California, Irvine, California 92697 (United States); Tritz, K. [Departments of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Fredrickson, E. D. [Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543 (United States)

    2016-11-15

    A compact and multi-view solid state neutral particle analyzer (SSNPA) diagnostic based on silicon photodiode arrays has been successfully tested on the National Spherical Torus Experiment-Upgrade. The SSNPA diagnostic provides spatially, temporally, and pitch-angle resolved measurements of fast-ion distribution by detecting fast neutral flux resulting from the charge exchange (CX) reactions. The system consists of three 16-channel subsystems: t-SSNPA viewing the plasma mid-radius and neutral beam (NB) line #2 tangentially, r-SSNPA viewing the plasma core and NB line #1 radially, and p-SSNPA with no intersection with any NB lines. Due to the setup geometry, the active CX signals of t-SSNPA and r-SSNPA are mainly sensitive to passing and trapped particles, respectively. In addition, both t-SSNPA and r-SSNPA utilize three vertically stacked arrays with different filter thicknesses to obtain coarse energy information. The experimental data show that all channels are operational. The signal to noise ratio is typically larger than 10, and the main noise is x-ray induced signal. The active and passive CX signals are clearly observed on t-SSNPA and r-SSNPA during NB modulation. The SSNPA data also indicate significant losses of passing particles during sawteeth, while trapped particles are weakly affected. Fluctuations up to 120 kHz have been observed on SSNPA, and they are strongly correlated with magnetohydrodynamics instabilities.

  4. Real-time data acquisition and parallel data processing solution for TJ-II Bolometer arrays diagnostic

    Energy Technology Data Exchange (ETDEWEB)

    Barrera, E. [Departamento de Sistemas Electronicos y de Control, Universidad Politecnica de Madrid, Crta. Valencia Km. 7, 28031 Madrid (Spain)]. E-mail: eduardo.barrera@upm.es; Ruiz, M. [Grupo de Investigacion en Instrumentacion y Acustica Aplicada, Universidad Politecnica de Madrid, Crta. Valencia Km. 7, 28031 Madrid (Spain); Lopez, S. [Departamento de Sistemas Electronicos y de Control, Universidad Politecnica de Madrid, Crta. Valencia Km. 7, 28031 Madrid (Spain); Machon, D. [Departamento de Sistemas Electronicos y de Control, Universidad Politecnica de Madrid, Crta. Valencia Km. 7, 28031 Madrid (Spain); Vega, J. [Asociacion EURATOM/CIEMAT para Fusion, 28040 Madrid (Spain); Ochando, M. [Asociacion EURATOM/CIEMAT para Fusion, 28040 Madrid (Spain)

    2006-07-15

    Maps of local plasma emissivity of TJ-II plasmas are determined using three-array cameras of silicon photodiodes (AXUV type from IRD). They have assigned the top and side ports of the same sector of the vacuum vessel. Each array consists of 20 unfiltered detectors. The signals from each of these detectors are the inputs to an iterative algorithm of tomographic reconstruction. Currently, these signals are acquired by a PXI standard system at approximately 50 kS/s, with 12 bits of resolution and are stored for off-line processing. A 0.5 s discharge generates 3 Mbytes of raw data. The algorithm's load exceeds the CPU capacity of the PXI system's controller in a continuous mode, making unfeasible to process the samples in parallel with their acquisition in a PXI standard system. A new architecture model has been developed, making possible to add one or several processing cards to a standard PXI system. With this model, it is possible to define how to distribute, in real-time, the data from all acquired signals in the system among the processing cards and the PXI controller. This way, by distributing the data processing among the system controller and two processing cards, the data processing can be done in parallel with the acquisition. Hence, this system configuration would be able to measure even in long pulse devices.

  5. Sheet resistance effects in mercury cadmium telluride implanted photodiodes

    International Nuclear Information System (INIS)

    Fiorito, G.; Gasparrini, G.; Svelto, F.

    1977-01-01

    The frequency response of Hg + implanted Hgsub(1-x)Cdsub(x)Te photodiodes is discussed. This analysis, evaluating both the response to fast laser pulses and the 3 dB rolloff of the diode shot-noise spectrum, showed the necessity of adopting a distributed equivalent circuit model taking into account the implanted layer sheet resistance. Frequency behaviour, in fact, proved not to match a simple p-n junction model based on a lumped standard equivalent circuit. On this basis apparent anomalies previously reported can be explained, and useful suggestions can be obtained for design and fabrication of fast detectors. (author)

  6. New amorphous-silicon image sensor for x-ray diagnostic medical imaging applications

    Science.gov (United States)

    Weisfield, Richard L.; Hartney, Mark A.; Street, Robert A.; Apte, Raj B.

    1998-07-01

    This paper introduces new high-resolution amorphous Silicon (a-Si) image sensors specifically configured for demonstrating film-quality medical x-ray imaging capabilities. The devices utilizes an x-ray phosphor screen coupled to an array of a-Si photodiodes for detecting visible light, and a-Si thin-film transistors (TFTs) for connecting the photodiodes to external readout electronics. We have developed imagers based on a pixel size of 127 micrometer X 127 micrometer with an approximately page-size imaging area of 244 mm X 195 mm, and array size of 1,536 data lines by 1,920 gate lines, for a total of 2.95 million pixels. More recently, we have developed a much larger imager based on the same pixel pattern, which covers an area of approximately 406 mm X 293 mm, with 2,304 data lines by 3,200 gate lines, for a total of nearly 7.4 million pixels. This is very likely to be the largest image sensor array and highest pixel count detector fabricated on a single substrate. Both imagers connect to a standard PC and are capable of taking an image in a few seconds. Through design rule optimization we have achieved a light sensitive area of 57% and optimized quantum efficiency for x-ray phosphor output in the green part of the spectrum, yielding an average quantum efficiency between 500 and 600 nm of approximately 70%. At the same time, we have managed to reduce extraneous leakage currents on these devices to a few fA per pixel, which allows for very high dynamic range to be achieved. We have characterized leakage currents as a function of photodiode bias, time and temperature to demonstrate high stability over these large sized arrays. At the electronics level, we have adopted a new generation of low noise, charge- sensitive amplifiers coupled to 12-bit A/D converters. Considerable attention was given to reducing electronic noise in order to demonstrate a large dynamic range (over 4,000:1) for medical imaging applications. Through a combination of low data lines capacitance

  7. Deep Ultraviolet Macroporous Silicon Filters, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I proposal describes a novel method to make deep and far UV optical filters from macroporous silicon. This type of filter consists of an array of...

  8. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  9. Physical and electrical bandwidths of integrated photodiodes in standard CMOS technology

    NARCIS (Netherlands)

    Radovanovic, S.; Annema, Anne J.; Nauta, Bram

    2003-01-01

    The influence of different geometries (layouts) and structures of high-speed photodiodes in fully standard 0.18 μm CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. Three photodiode structures are studied: nwell/p-substrate, p+/nwell/p-substrate and p+/nwell. The

  10. Performance Analysis of Si-Based Ultra-Shallow Junction Photodiodes for UV Radiation Detection

    NARCIS (Netherlands)

    Shi, L.

    2013-01-01

    This thesis presents a performance investigation of newly-developed ultra-shallow junction photodiodes (PureB-diodes) for ultraviolet (UV) radiation detection. The photodiodes are fabricated by pure boron chemical vapor deposition (PureB CVD) technology, which can provide nanometer-thin boron

  11. Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

    Science.gov (United States)

    Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

    2014-01-01

    The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

  12. Optimization of eyesafe avalanche photodiode lidar for automobile safety and autonomous navigation systems

    Science.gov (United States)

    Williams, George M.

    2017-03-01

    Newly emerging accident-reducing, driver-assistance, and autonomous-navigation technology for automobiles is based on real-time three-dimensional mapping and object detection, tracking, and classification using lidar sensors. Yet, the lack of lidar sensors suitable for meeting application requirements appreciably limits practical widespread use of lidar in trucking, public livery, consumer cars, and fleet automobiles. To address this need, a system-engineering perspective to eyesafe lidar-system design for high-level advanced driver-assistance sensor systems and a design trade study including 1.5-μm spot-scanned, line-scanned, and flash-lidar systems are presented. A cost-effective lidar instrument design is then proposed based on high-repetition-rate diode-pumped solid-state lasers and high-gain, low-excess-noise InGaAs avalanche photodiode receivers and focal plane arrays. Using probabilistic receiver-operating-characteristic analysis, derived from measured component performance, a compact lidar system is proposed that is capable of 220 m ranging with 5-cm accuracy, which can be readily scaled to a 360-deg field of regard.

  13. A photodiode based on PbS nanocrystallites for FYTRONIX solar panel automatic tracking controller

    Science.gov (United States)

    Wageh, S.; Farooq, W. A.; Tataroğlu, A.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.

    2017-12-01

    The structural, optical and photoelectrical properties of the fabricated Al/PbS/p-Si/Al photodiode based on PbS nanocrystallites were investigated. The PbS nanocrystallites were characterized by X-ray diffraction (XRD), UV-VIS-NIR, Infrared and Raman spectroscopy. The XRD diffraction peaks show that the prepared PbS nanostructure is in high crystalline state. Various electrical parameters of the prepared photodiode were analyzed from the electrical characteristics based on I-V and C-V-G. The photodiode has a high rectification ratio of 5.85×104 at dark and ±4 V. Moreover, The photocurrent results indicate a strong photovoltaic behavior. The frequency dependence of capacitance and conductance characteristics was attributed to depletion region behavior of the photodiode. The diode was used to control solar panel power automatic tracking controller in dual axis. The fabricated photodiode works as a photosensor to control Solar tracking systems.

  14. Bio-inspired nano-photodiode for Low Light, High Resolution and crosstalk-free CMOS image sensing

    KAUST Repository

    Saffih, Faycal; Fitzpatrick, Nathaniel N.; Mohammad, Mohammad Ali; Evoy, S.; Cui, Bo

    2011-01-01

    photodiode morphology. The proposed bio-inspired nanorod photodiode puts the depletion region length on the path of the incident photon instead of on its width, as the case is with the planar photodiodes. The depletion region has a revolving volume

  15. Organization of silicon nanocrystals by localized electrochemical etching

    International Nuclear Information System (INIS)

    Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

    2009-01-01

    An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

  16. Suppression of irradiation effects in gold-doped silicon detectors

    International Nuclear Information System (INIS)

    McPherson, M.; Sloan, T.; Jones, B.K.

    1997-01-01

    Two sets of silicon detectors were irradiated with 1 MeV neutrons to different fluences and then characterized. The first batch were ordinary p-i-n photodiodes fabricated from high-resistivity (400 Ω cm) silicon, while the second batch were gold-doped powder diodes fabricated from silicon material initially of low resistivity (20 Ω cm). The increase in reverse leakage current after irradiation was found to be more in the former case than in the latter. The fluence dependence of the capacitance was much more pronounced in the p-i-n diodes than in the gold-doped diodes. Furthermore, photo current generation by optical means was less in the gold doped devices. All these results suggest that gold doping in silicon somewhat suppresses the effects of neutron irradiation. (author)

  17. Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields

    Czech Academy of Sciences Publication Activity Database

    Wauters, F.; Kraeva, I.S.; Tandecki, M.; Traykov, E.; Van Gorp, S.; Zákoucký, Dalibor; Severijns, N.

    2009-01-01

    Roč. 604, č. 3 (2009), s. 563-567 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : PIN-diode * beta-particle detection * Magnetic field Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.317, year: 2009

  18. Studies of avalanche photodiodes for scintillating fibre tracking readout

    International Nuclear Information System (INIS)

    Fenker, H.; Thomas, J.

    1993-01-01

    Avalanche Photodiodes (APDs) operating in ''Geiger Mode'' have been studied in a fibre tracking readout environment. A fast recharge circuit has been developed for high rate data taking, and results obtained from a model fibre tracker in the test beam at Brookhaven National Laboratory are presented. A high rate calibrated light source has been developed using a commercially available laser diode and has been used to measure the efficiency of the devices. The transmission of the light from a 1mm fibre onto a 0.5mm diameter APD surface has been identified as the main problem in the use of these particular devices for scintillating fibre tracking in the Superconducting Supercollider environment. Solutions to this problem are proposed

  19. Adaptive aperture for Geiger mode avalanche photodiode flash ladar systems

    Science.gov (United States)

    Wang, Liang; Han, Shaokun; Xia, Wenze; Lei, Jieyu

    2018-02-01

    Although the Geiger-mode avalanche photodiode (GM-APD) flash ladar system offers the advantages of high sensitivity and simple construction, its detection performance is influenced not only by the incoming signal-to-noise ratio but also by the absolute number of noise photons. In this paper, we deduce a hyperbolic approximation to estimate the noise-photon number from the false-firing percentage in a GM-APD flash ladar system under dark conditions. By using this hyperbolic approximation function, we introduce a method to adapt the aperture to reduce the number of incoming background-noise photons. Finally, the simulation results show that the adaptive-aperture method decreases the false probability in all cases, increases the detection probability provided that the signal exceeds the noise, and decreases the average ranging error per frame.

  20. Summary of conclusions of the vacuum photodiode working group

    International Nuclear Information System (INIS)

    Willis, W.

    1988-01-01

    This report presents the design of a 30 MV gun. In considering the design of the vacuum photodiode switched to drive the accelerating field in the gun, we have paid attention to the work of the groups on high-voltage pulsing and on the design of the laser. We have found that we can trade off reduced laser power at the cost of a higher charging voltage for our one stage accelerator. We have presented the various parameter sets to the two groups and attempted to measure their enthusiasm for each set, and we have chosen the set that seems to provide an equal level of difficulty on both sides. 1 fig., 1 tab