WorldWideScience

Sample records for silicon micromachined integrated

  1. Micro benchtop optics by bulk silicon micromachining

    Science.gov (United States)

    Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  2. Micromachined silicon seismic accelerometer development

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G.; Montague, S. [and others

    1996-08-01

    Batch-fabricated silicon seismic transducers could revolutionize the discipline of seismic monitoring by providing inexpensive, easily deployable sensor arrays. Our ultimate goal is to fabricate seismic sensors with sensitivity and noise performance comparable to short-period seismometers in common use. We expect several phases of development will be required to accomplish that level of performance. Traditional silicon micromachining techniques are not ideally suited to the simultaneous fabrication of a large proof mass and soft suspension, such as one needs to achieve the extreme sensitivities required for seismic measurements. We have therefore developed a novel {open_quotes}mold{close_quotes} micromachining technology that promises to make larger proof masses (in the 1-10 mg range) possible. We have successfully integrated this micromolding capability with our surface-micromachining process, which enables the formation of soft suspension springs. Our calculations indicate that devices made in this new integrated technology will resolve down to at least sub-{mu}G signals, and may even approach the 10{sup -10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

  3. A Novel Silicon Micromachined Integrated MCM Thermal Management System

    Science.gov (United States)

    Kazmierczak, M. J.; Henderson, H. T.; Gerner, F. M.

    1997-01-01

    "Micromachining" is a chemical means of etching three-dimensional structures, typically in single- crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (Micro Electro Mechanical Systems), where in addition to the ordinary two-dimensional (planar) microelectronics, it is possible to build three-dimensional n-ticromotors, electrically- actuated raicrovalves, hydraulic systems and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor n-ticrofabfication. The University of Cincinnati group in collaboration with Karl Baker at NASA Lewis were the first to form micro heat pipes in silicon by the above techniques. Current work now in progress using MEMS technology is now directed towards the development of the next generation in MCM (Multi Chip Module) packaging. Here we propose to develop a complete electronic thermal management system which will allow densifica6on in chip stacking by perhaps two orders of magnitude. Furthermore the proposed technique will allow ordinary conu-nercial integrated chips to be utilized. Basically, the new technique involves etching square holes into a silicon substrate and then inserting and bonding commercially available integrated chips into these holes. For example, over a 100 1/4 in. by 1 /4 in. integrated chips can be placed on a 4 in. by 4 in. silicon substrate to form a Multi-Chip Module (MCM). Placing these MCM's in-line within an integrated rack then allows for three-diniensional stacking. Increased miniaturization of microelectronic circuits will lead to very high local heat fluxes. A high performance thermal management system will be specifically designed to remove the generated energy. More specifically, a compact heat exchanger with milli / microchannels will be developed and tested to remove the heat through the back side of this MCM assembly for moderate and high

  4. Silicon micromachined vibrating gyroscopes

    Science.gov (United States)

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  5. Micromachined Thin-Film Sensors for SOI-CMOS Co-Integration

    Science.gov (United States)

    Laconte, Jean; Flandre, D.; Raskin, Jean-Pierre

    Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 μm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution.

  6. Silicon-micromachined microchannel plates

    CERN Document Server

    Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

  7. Quasimetallic silicon micromachined photonic crystals

    International Nuclear Information System (INIS)

    Temelkuran, B.; Bayindir, Mehmet; Ozbay, E.; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.

    2001-01-01

    We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations

  8. Silicon Micromachines for Science and Technology

    International Nuclear Information System (INIS)

    Bishop, David J.

    2002-01-01

    The era of silicon micromechanics is upon us. In areas as diverse as telecommunications, automotive, aerospace, chemistry, entertainment and basic science, the ability to build microscopic machines from silicon is having a revolutionary impact. In my talk, I will discuss what micromachines are, how they are built and show examples of how they will have a revolutionary impact in many areas of science as well as technology.

  9. Silicon-micromachined microchannel plates

    International Nuclear Information System (INIS)

    Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

  10. Silicon Micromachined Microlens Array for THz Antennas

    Science.gov (United States)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  11. A silicon micromachined resonant pressure sensor

    International Nuclear Information System (INIS)

    Tang Zhangyang; Fan Shangchun; Cai Chenguang

    2009-01-01

    This paper describes the design, fabrication and test of a silicon micromachined resonant pressure sensor. A square membrane and a doubly clamped resonant beam constitute a compound structure. The former senses the pressure directly, while the latter changes its resonant frequency according to deformation of the membrane. The final output relation between the resonant frequency and the applied pressure is deducted according to the structure mechanical properties. Sensors are fabricated by micromachining technology, and then sealed in vaccum. These sensors are tested by open-loop and close-loop system designed on purpose. The experiment results demonstrate that the sensor has a sensitivity of 49.8Hz/kPa and repeatability of 0.08%.

  12. Micromachined silicon cantilevers with integrated high-frequency magnetoimpedance sensors for simultaneous strain and magnetic field detection

    Science.gov (United States)

    Buettel, G.; Joppich, J.; Hartmann, U.

    2017-12-01

    Giant magnetoimpedance (GMI) measurements in the high-frequency regime utilizing a coplanar waveguide with an integrated Permalloy multilayer and micromachined on a silicon cantilever are reported. The fabrication process is described in detail. The aspect ratio of the magnetic multilayer in the magnetoresistive and magnetostrictive device was varied. Tensile strain and compressive strain were applied. Vector network analyzer measurements in the range from the skin effect to ferromagnetic resonance confirm the technological potential of GMI-based micro-electro-mechanical devices for strain and magnetic field sensing applications. The strain-impedance gauge factor was quantified by finite element strain calculations and reaches a maximum value of almost 200.

  13. Micromachined integrated quantum circuit containing a superconducting qubit

    Science.gov (United States)

    Brecht, Teresa; Chu, Yiwen; Axline, Christopher; Pfaff, Wolfgang; Blumoff, Jacob; Chou, Kevin; Krayzman, Lev; Frunzio, Luigi; Schoelkopf, Robert

    We demonstrate a functional multilayer microwave integrated quantum circuit (MMIQC). This novel hardware architecture combines the high coherence and isolation of three-dimensional structures with the advantages of integrated circuits made with lithographic techniques. We present fabrication and measurement of a two-cavity/one-qubit prototype, including a transmon coupled to a three-dimensional microwave cavity micromachined in a silicon wafer. It comprises a simple MMIQC with competitive lifetimes and the ability to perform circuit QED operations in the strong dispersive regime. Furthermore, the design and fabrication techniques that we have developed are extensible to more complex quantum information processing devices.

  14. Optimization of design parameters for bulk micromachined silicon membranes for piezoresistive pressure sensing application

    International Nuclear Information System (INIS)

    Belwanshi, Vinod; Topkar, Anita

    2016-01-01

    Finite element analysis study has been carried out to optimize the design parameters for bulk micro-machined silicon membranes for piezoresistive pressure sensing applications. The design is targeted for measurement of pressure up to 200 bar for nuclear reactor applications. The mechanical behavior of bulk micro-machined silicon membranes in terms of deflection and stress generation has been simulated. Based on the simulation results, optimization of the membrane design parameters in terms of length, width and thickness has been carried out. Subsequent to optimization of membrane geometrical parameters, the dimensions and location of the high stress concentration region for implantation of piezoresistors have been obtained for sensing of pressure using piezoresistive sensing technique.

  15. Optimization of design parameters for bulk micromachined silicon membranes for piezoresistive pressure sensing application

    Science.gov (United States)

    Belwanshi, Vinod; Topkar, Anita

    2016-05-01

    Finite element analysis study has been carried out to optimize the design parameters for bulk micro-machined silicon membranes for piezoresistive pressure sensing applications. The design is targeted for measurement of pressure up to 200 bar for nuclear reactor applications. The mechanical behavior of bulk micro-machined silicon membranes in terms of deflection and stress generation has been simulated. Based on the simulation results, optimization of the membrane design parameters in terms of length, width and thickness has been carried out. Subsequent to optimization of membrane geometrical parameters, the dimensions and location of the high stress concentration region for implantation of piezoresistors have been obtained for sensing of pressure using piezoresistive sensing technique.

  16. Nickel silicide thin films as masking and structural layers for silicon bulk micro-machining by potassium hydroxide wet etching

    International Nuclear Information System (INIS)

    Bhaskaran, M; Sriram, S; Sim, L W

    2008-01-01

    This paper studies the feasibility of using titanium and nickel silicide thin films as mask materials for silicon bulk micro-machining. Thin films of nickel silicide were found to be more resistant to wet etching in potassium hydroxide. The use of nickel silicide as a structural material, by fabricating micro-beams of varying dimensions, is demonstrated. The micro-structures were realized using these thin films with wet etching using potassium hydroxide solution on (1 0 0) and (1 1 0) silicon substrates. These results show that nickel silicide is a suitable alternative to silicon nitride for silicon bulk micro-machining

  17. Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

    International Nuclear Information System (INIS)

    Yu Xiaomei; Tang Yaquan; Zhang Haitao

    2008-01-01

    This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

  18. Micromachined thin-film sensors for SOI-CMOS co-integration

    CERN Document Server

    Laconte, Jean; Raskin, Jean-Pierre

    2006-01-01

    Co-integration of MEMS and MOS in SOI technology is promising and well demonstrated hereThe impact of Micromachining on SOI devices is deeply analyzed for the first timeInclude extensive TMAH etching, residual stress, microheaters, gas-flow sensors reviewResidual stresses in thin films need to be more and more monitored in MEMS designsTMAH micromachining is an attractive alternative to KOH.

  19. Characterization of bulk-micromachined direct-bonded silicon nanofilters

    Science.gov (United States)

    Tu, Jay K.; Huen, Tony; Szema, Robert; Ferrari, Mauro

    1998-03-01

    The ability to separate 30-100 nm particles - nanofiltration - is critical for many biomedical applications. Where this filtration needs to be absolute, such as for viral elimination in the blood fractionation process, the large variations in pore size found with conventional polymeric filters can lead to the unwanted presence of viruses in the filtrate. To overcome this problem, we have developed a filter with micromachined channels sandwiched between two bonded silicon wafers. These channels are formed through the selective deposition and then removal of a thermally-grown oxide, the thickness of which can be controlled to +/- 4 percent for 30 nm pores. In this paper, we will present both the gas and liquid characterization, and the filtration studies done on 44 and 100 nm beads.

  20. Channeling-based collimators for generation of microbeams produced by silicon micromachining technology

    International Nuclear Information System (INIS)

    Guidi, V.; Antonini, A.; Milan, E.; Ronzoni, A.; Martinelli, G.; Biryukov, V.M.; Chesnokov, Yu.A.

    2006-01-01

    The growing interest on micro-beams in recent years and the combined development of channeling technology in high-energy physics have opened the way to new concepts for micro-beams devices. Silicon micromachining technology is here applied to manufacture micro-collimators in inexpensive and feasible ways. Both dry and wet etchings can be employed for the purpose, though the latter technique appears to be cheaper and easier. Two designs for micro-collimator devices have been considered and preliminary samples have been produced accordingly

  1. Micromachined silicon acoustic delay line with improved structural stability and acoustic directivity for real-time photoacoustic tomography

    Science.gov (United States)

    Cho, Young; Kumar, Akhil; Xu, Song; Zou, Jun

    2017-03-01

    Recent studies have shown that micromachined silicon acoustic delay lines can provide a promising solution to achieve real-time photoacoustic tomography without the need for complex transducer arrays and data acquisition electronics. However, as its length increases to provide longer delay time, the delay line becomes more vulnerable to structural instability due to reduced mechanical stiffness. In addition, the small cross-section area of the delay line results in a large acoustic acceptance angle and therefore poor directivity. To address these two issues, this paper reports the design, fabrication, and testing of a new silicon acoustic delay line enhanced with 3D printed polymer micro linker structures. First, mechanical deformation of the silicon acoustic delay line (with and without linker structures) under gravity was simulated by using finite element method. Second, the acoustic crosstalk and acoustic attenuation caused by the polymer micro linker structures were evaluated with both numerical simulation and ultrasound transmission testing. The result shows that the use of the polymer micro linker structures significantly improves the structural stability of the silicon acoustic delay lines without creating additional acoustic attenuation and crosstalk. In addition, a new tapered design for the input terminal of the delay line was also investigate to improve its acoustic directivity by reducing the acoustic acceptance angle. These two improvements are expected to provide an effective solution to eliminate current limitations on the achievable acoustic delay time and out-of-plane imaging resolution of micromachined silicon acoustic delay line arrays.

  2. Integration of Capacitive Micromachined Ultrasound Transducers to Microfluidic Devices

    KAUST Repository

    Viržonis, Darius; Kodzius, Rimantas; Vanagas, Galius

    2013-01-01

    The design and manufacturing flexibility of capacitive micromachined ultrasound transducers (CMUT) makes them attractive option for integration with microfluidic devices both for sensing and fluid manipulation. CMUT concept is introduced here

  3. Integration of Capacitive Micromachined Ultrasound Transducers to Microfluidic Devices

    KAUST Repository

    Viržonis, Darius

    2013-10-22

    The design and manufacturing flexibility of capacitive micromachined ultrasound transducers (CMUT) makes them attractive option for integration with microfluidic devices both for sensing and fluid manipulation. CMUT concept is introduced here by presentin

  4. Micro-machined resonator oscillator

    Science.gov (United States)

    Koehler, Dale R.; Sniegowski, Jeffry J.; Bivens, Hugh M.; Wessendorf, Kurt O.

    1994-01-01

    A micro-miniature resonator-oscillator is disclosed. Due to the miniaturization of the resonator-oscillator, oscillation frequencies of one MHz and higher are utilized. A thickness-mode quartz resonator housed in a micro-machined silicon package and operated as a "telemetered sensor beacon" that is, a digital, self-powered, remote, parameter measuring-transmitter in the FM-band. The resonator design uses trapped energy principles and temperature dependence methodology through crystal orientation control, with operation in the 20-100 MHz range. High volume batch-processing manufacturing is utilized, with package and resonator assembly at the wafer level. Unique design features include squeeze-film damping for robust vibration and shock performance, capacitive coupling through micro-machined diaphragms allowing resonator excitation at the package exterior, circuit integration and extremely small (0.1 in. square) dimensioning. A family of micro-miniature sensor beacons is also disclosed with widespread applications as bio-medical sensors, vehicle status monitors and high-volume animal identification and health sensors. The sensor family allows measurement of temperatures, chemicals, acceleration and pressure. A microphone and clock realization is also available.

  5. Discretely tunable micromachined injection-locked lasers

    International Nuclear Information System (INIS)

    Cai, H; Yu, M B; Lo, G Q; Kwong, D L; Zhang, X M; Liu, A Q; Liu, B

    2010-01-01

    This paper reports a micromachined injection-locked laser (ILL) to provide tunable discrete wavelengths. It utilizes a non-continuously tunable laser as the master to lock a Fabry–Pérot semiconductor laser chip. Both lasers are integrated into a deep-etched silicon chip with dimensions of 3 mm × 3 mm × 0.8 mm. Based on the experimental results, significant improvements in the optical power and spectral purity have been achieved in the fully locked state, and optical hysteresis and bistability have also been observed in response to the changes of the output wavelength and optical power of the master laser. As a whole system, the micromachined ILL is able to provide single mode, discrete wavelength tuning, high power and direct modulation with small size and single-chip solution, making it promising for advanced optical communications such as wavelength division multiplexing optical access networks.

  6. New technique for fabrication of high frequency piezoelectric Micromachined Ultrasound Transducers

    DEFF Research Database (Denmark)

    Pedersen, T; Thomsen, Erik Vilain; Zawada, T

    2008-01-01

    A novel technique for fabrication of linear arrays of high frequency piezoelectric Micromachined Ultrasound Transducers (pMUT) on silicon substrates is presented. Piezoelectric elements are formed by deposition of PZT ((PbZrxTi1-x)O3) into etched features of the silicon substrate such that the de......A novel technique for fabrication of linear arrays of high frequency piezoelectric Micromachined Ultrasound Transducers (pMUT) on silicon substrates is presented. Piezoelectric elements are formed by deposition of PZT ((PbZrxTi1-x)O3) into etched features of the silicon substrate...

  7. High-frequency micro-machined power inductors

    International Nuclear Information System (INIS)

    Wang, N.; O'Donnell, T.; Roy, S.; Brunet, M.; McCloskey, P.; O'Mathuna, S.C.

    2005-01-01

    Power inductors have been fabricated on silicon substrates using low-temperature IC compatible processes. The electrical properties of these micro-inductors have been measured and discussed. A maximum quality factor of 6 at 4 MHz has been achieved with an inductance value of about 160 nH. The DC saturation currents of the non-gapped and gapped inductors are ∼500 and 700 mA, respectively. The relatively high Q factor and the load current characteristics allow these micro-machined inductors to be used in integrated power converters

  8. Damping control of micromachined lowpass mechanical vibration isolation filters using electrostatic actuation with electronic signal processing

    Science.gov (United States)

    Dean, Robert; Flowers, George; Sanders, Nicole; MacAllister, Ken; Horvath, Roland; Hodel, A. S.; Johnson, Wayne; Kranz, Michael; Whitley, Michael

    2005-05-01

    Some harsh environments, such as those encountered by aerospace vehicles and various types of industrial machinery, contain high frequency/amplitude mechanical vibrations. Unfortunately, some very useful components are sensitive to these high frequency mechanical vibrations. Examples include MEMS gyroscopes and resonators, oscillators and some micro optics. Exposure of these components to high frequency mechanical vibrations present in the operating environment can result in problems ranging from an increased noise floor to component failure. Passive micromachined silicon lowpass filter structures (spring-mass-damper) have been demonstrated in recent years. However, the performance of these filter structures is typically limited by low damping (especially if operated in near-vacuum environments) and a lack of tunability after fabrication. Active filter topologies, such as piezoelectric, electrostrictive-polymer-film and SMA have also been investigated in recent years. Electrostatic actuators, however, are utilized in many micromachined silicon devices to generate mechanical motion. They offer a number of advantages, including low power, fast response time, compatibility with silicon micromachining, capacitive position measurement and relative simplicity of fabrication. This paper presents an approach for realizing active micromachined mechanical lowpass vibration isolation filters by integrating an electrostatic actuator with the micromachined passive filter structure to realize an active mechanical lowpass filter. Although the electrostatic actuator can be used to adjust the filter resonant frequency, the primary application is for increasing the damping to an acceptable level. The physical size of these active filters is suitable for use in or as packaging for sensitive electronic and MEMS devices, such as MEMS vibratory gyroscope chips.

  9. Micromachined silicon acoustic delay line with 3D-printed micro linkers and tapered input for improved structural stability and acoustic directivity

    International Nuclear Information System (INIS)

    Cho, Y; Kumar, A; Xu, S; Zou, J

    2016-01-01

    Recent studies have shown that micromachined silicon acoustic delay lines can provide a promising solution to achieve real-time photoacoustic tomography without the need for complex transducer arrays and data acquisition electronics. To achieve deeper imaging depth and wider field of view, a longer delay time and therefore delay length are required. However, as the length of the delay line increases, it becomes more vulnerable to structural instability due to reduced mechanical stiffness. In this paper, we report the design, fabrication, and testing of a new silicon acoustic delay line enhanced with 3D printed polymer micro linker structures. First, mechanical deformation of the silicon acoustic delay line (with and without linker structures) under gravity was simulated by using finite element method. Second, the acoustic crosstalk and acoustic attenuation caused by the polymer micro linker structures were evaluated with both numerical simulation and ultrasound transmission testing. The result shows that the use of the polymer micro linker structures significantly improves the structural stability of the silicon acoustic delay lines without creating additional acoustic attenuation and crosstalk. In addition, the improvement of the acoustic acceptance angle of the silicon acoustic delay lines was also investigated to better suppress the reception of unwanted ultrasound signals outside of the imaging plane. These two improvements are expected to provide an effective solution to eliminate current limitations on the achievable acoustic delay time and out-of-plane imaging resolution of micromachined silicon acoustic delay line arrays. (paper)

  10. Modeling the Microstructure Curvature of Boron-Doped Silicon in Bulk Micromachined Accelerometer

    Directory of Open Access Journals (Sweden)

    Xiaoping He

    2013-01-01

    Full Text Available Microstructure curvature, or buckling, is observed in the micromachining of silicon sensors because of the doping of impurities for realizing certain electrical and mechanical processes. This behavior can be a key source of error in inertial sensors. Therefore, identifying the factors that influence the buckling value is important in designing MEMS devices. In this study, the curvature in the proof mass of an accelerometer is modeled as a multilayered solid model. Modeling is performed according to the characteristics of the solid diffusion mechanism in the bulk-dissolved wafer process (BDWP based on the self-stopped etch technique. Moreover, the proposed multilayered solid model is established as an equivalent composite structure formed by a group of thin layers that are glued together. Each layer has a different Young’s modulus value and each undergoes different volume shrinkage strain owing to boron doping in silicon. Observations of five groups of proof mass blocks of accelerometers suggest that the theoretical model is effective in determining the buckling value of a fabricated structure.

  11. Micromachined silicon parallel acoustic delay lines as time-delayed ultrasound detector array for real-time photoacoustic tomography

    Science.gov (United States)

    Cho, Y.; Chang, C.-C.; Wang, L. V.; Zou, J.

    2016-02-01

    This paper reports the development of a new 16-channel parallel acoustic delay line (PADL) array for real-time photoacoustic tomography (PAT). The PADLs were directly fabricated from single-crystalline silicon substrates using deep reactive ion etching. Compared with other acoustic delay lines (e.g., optical fibers), the micromachined silicon PADLs offer higher acoustic transmission efficiency, smaller form factor, easier assembly, and mass production capability. To demonstrate its real-time photoacoustic imaging capability, the silicon PADL array was interfaced with one single-element ultrasonic transducer followed by one channel of data acquisition electronics to receive 16 channels of photoacoustic signals simultaneously. A PAT image of an optically-absorbing target embedded in an optically-scattering phantom was reconstructed, which matched well with the actual size of the imaged target. Because the silicon PADL array allows a signal-to-channel reduction ratio of 16:1, it could significantly simplify the design and construction of ultrasonic receivers for real-time PAT.

  12. Micromachined silicon parallel acoustic delay lines as time-delayed ultrasound detector array for real-time photoacoustic tomography

    International Nuclear Information System (INIS)

    Cho, Y; Chang, C-C; Zou, J; Wang, L V

    2016-01-01

    This paper reports the development of a new 16-channel parallel acoustic delay line (PADL) array for real-time photoacoustic tomography (PAT). The PADLs were directly fabricated from single-crystalline silicon substrates using deep reactive ion etching. Compared with other acoustic delay lines (e.g., optical fibers), the micromachined silicon PADLs offer higher acoustic transmission efficiency, smaller form factor, easier assembly, and mass production capability. To demonstrate its real-time photoacoustic imaging capability, the silicon PADL array was interfaced with one single-element ultrasonic transducer followed by one channel of data acquisition electronics to receive 16 channels of photoacoustic signals simultaneously. A PAT image of an optically-absorbing target embedded in an optically-scattering phantom was reconstructed, which matched well with the actual size of the imaged target. Because the silicon PADL array allows a signal-to-channel reduction ratio of 16:1, it could significantly simplify the design and construction of ultrasonic receivers for real-time PAT. (paper)

  13. Micromachined high-performance RF passives in CMOS substrate

    International Nuclear Information System (INIS)

    Li, Xinxin; Ni, Zao; Gu, Lei; Wu, Zhengzheng; Yang, Chen

    2016-01-01

    This review systematically addresses the micromachining technologies used for the fabrication of high-performance radio-frequency (RF) passives that can be integrated into low-cost complementary metal-oxide semiconductor (CMOS)-grade (i.e. low-resistivity) silicon wafers. With the development of various kinds of post-CMOS-compatible microelectromechanical systems (MEMS) processes, 3D structural inductors/transformers, variable capacitors, tunable resonators and band-pass/low-pass filters can be compatibly integrated into active integrated circuits to form monolithic RF system-on-chips. By using MEMS processes, including substrate modifying/suspending and LIGA-like metal electroplating, both the highly lossy substrate effect and the resistive loss can be largely eliminated and depressed, thereby meeting the high-performance requirements of telecommunication applications. (topical review)

  14. Corporate array of micromachined dipoles on silicon wafer for 60 GHz communication systems

    KAUST Repository

    Sallam, M. O.

    2013-03-01

    In this paper, an antenna array operating at 60 GHz and realized on 0.675 mm thick silicon substrate is presented. The array is constructed using four micromachined half-wavelength dipoles fed by a corporate feeding network. Isolation between the antenna array and its feeding network is achieved via a ground plane. This arrangement leads to maximizing the broadside radiation with relatively high front-to-back ratio. Simulations have been carried out using both HFSS and CST, which showed very good agreement. Results reveal that the proposed antenna array has good radiation characteristics, where the directivity, gain, and radiation efficiency are around 10.5 dBi, 9.5 dBi, and 79%, respectively. © 2013 IEEE.

  15. RF characterization and analytical modelling of through silicon vias and coplanar waveguides for 3D integration

    NARCIS (Netherlands)

    Lamy, Y.; Jinesh, K.B.; Roozeboom, F.; Gravesteijn, D.J.; Besling, W.F.A.

    2010-01-01

    High-aspect ratio (12.5) through silicon vias (TSV) made in a silicon interposer have been electrically characterized in the direct current (dc) and microwave regimes for 3D interconnect applications. The vias were micro-machined in silicon, insulated, and filled with copper employing a bottom-up

  16. Towards micro-assembly of hybrid MOEMS components on a reconfigurable silicon free-space micro-optical bench

    International Nuclear Information System (INIS)

    Bargiel, S; Gorecki, C; Rabenorosoa, K; Clévy, C; Lutz, P

    2010-01-01

    The 3D integration of hybrid chips is a viable approach for the micro-optical technologies to reduce the costs of assembly and packaging. In this paper a technology platform for the hybrid integration of MOEMS components on a reconfigurable silicon free-space micro-optical bench (FS-MOB) is presented. In this approach a desired optical component (e.g. micromirror, microlens) is integrated with a removable and adjustable silicon holder which can be manipulated, aligned and fixed in the precisely etched rail of the silicon baseplate by use of a robotic micro-assembly station. An active-based gripping system allows modification of the holder position on the baseplate with nanometre precision. The fabrication processes of the micromachined parts of the micro-optical bench, based on bulk micromachining of standard silicon wafer and SOI wafer, are described. The successful assembly of the holders, equipped with a micromirror and a refractive glass ball microlens, on the baseplate rail is demonstrated.

  17. A fully packaged micromachined single crystalline resonant force sensor

    Energy Technology Data Exchange (ETDEWEB)

    Cavalloni, C.; Gnielka, M.; Berg, J. von [Kistler Instrumente AG, Winterthur (Switzerland); Haueis, M.; Dual, J. [ETH Zuerich, Inst. of Mechanical Systems, Zuerich (Switzerland); Buser, R. [Interstate Univ. of Applied Science Buchs, Buchs (Switzerland)

    2001-07-01

    In this work a fully packaged resonant force sensor for static load measurements is presented. The working principle is based on the shift of the resonance frequency in response to the applied load. The heart of the sensor, the resonant structure, is fabricated by micromachining using single crystalline silicon. To avoid creep and hysteresis and to minimize temperature induced stress the resonant structure is encapsulated using an all-in-silicon solution. This means that the load coupling, the excitation of the microresonator and the detection of the oscillation signal are integrated in only one single crystalline silicon chip. The chip is packaged into a specially designed housing made of steel which has been designed with respect to application in harsh environments. The unloaded sensor has an initial frequency of about 22,5 kHz. The sensitivity amounts to 26 Hz/N with a linearity error significantly less than 0,5%FSO. (orig.)

  18. Silicon micromachining using a high-density plasma source

    International Nuclear Information System (INIS)

    McAuley, S.A.; Ashraf, H.; Atabo, L.; Chambers, A.; Hall, S.; Hopkins, J.; Nicholls, G.

    2001-01-01

    Dry etching of Si is critical in satisfying the demands of the micromachining industry. The micro-electro-mechanical systems (MEMS) community requires etches capable of high aspect ratios, vertical profiles, good feature size control and etch uniformity along with high throughput to satisfy production requirements. Surface technology systems' (STS's) high-density inductively coupled plasma (ICP) etch tool enables a wide range of applications to be realized whilst optimizing the above parameters. Components manufactured from Si using an STS ICP include accelerometers and gyroscopes for military, automotive and domestic applications. STS's advanced silicon etch (ASE TM ) has also allowed the first generation of MEMS-based optical switches and attenuators to reach the marketplace. In addition, a specialized application for fabricating the next generation photolithography exposure masks has been optimized for 200 mm diameter wafers, to depths of ∼750 μm. Where the profile is not critical, etch rates of greater than 8 μm min -1 have been realized to replace previous methods such as wet etching. This is also the case for printer applications. Specialized applications that require etching down to pyrex or oxide often result in the loss of feature size control at the interface; this is an industry wide problem. STS have developed a technique to address this. The rapid progression of the industry has led to development of the STS ICP etch tool, as well as the process. (author)

  19. Silicon Micromachining in RF and Photonic Applications

    Science.gov (United States)

    Lin, Tsen-Hwang; Congdon, Phil; Magel, Gregory; Pang, Lily; Goldsmith, Chuck; Randall, John; Ho, Nguyen

    1995-01-01

    Texas Instruments (TI) has developed membrane and micromirror devices since the late 1970s. An eggcrate space membrane was used as the spatial light modulator in the early years. Discrete micromirrors supported by cantilever beams created a new era for micromirror devices. Torsional micromirror and flexure-beam micromirror devices were promising for mass production because of their stable supports. TI's digital torsional micromirror device is an amplitude modulator (known as the digital micromirror device (DMD) and is in production development, discussed elsewhere. We also use a torsional device for a 4 x 4 fiber-optic crossbar switch in a 2 cm x 2 cm package. The flexure-beam micromirror device is an analog phase modulator and is considered more efficient than amplitude modulators for use in optical processing systems. TI also developed millimeter-sized membranes for integrated optical switches for telecommunication and network applications. Using a member in radio frequency (RF) switch applications is a rapidly growing area because of the micromechanical device performance in microsecond-switching characteristics. Our preliminary membrane RF switch test structure results indicate promising speed and RF switching performance. TI collaborated with MIT for modeling of metal-based micromachining.

  20. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  1. Fabrication of High-Frequency pMUT Arrays on Silicon Substrates

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Zawada, Tomasz; Hansen, Karsten

    2010-01-01

    A novel technique based on silicon micromachining for fabrication of linear arrays of high-frequency piezoelectric micromachined ultrasound transducers (pMUT) is presented. Piezoelectric elements are formed by deposition of lead zirconia titanate into etched features of a silicon substrate...

  2. Micromachined Integrated Transducers for Ultrasound Imaging

    DEFF Research Database (Denmark)

    la Cour, Mette Funding

    The purpose of this project is to develop capacitive micromachined ultrasonic transducers (CMUTs) for medical imaging. Medical ultrasound transducers used today are fabricated using piezoelectric materials and bulk processing. To fabricate transducers capable of delivering a higher imaging...

  3. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  4. Biasing of Capacitive Micromachined Ultrasonic Transducers.

    Science.gov (United States)

    Caliano, Giosue; Matrone, Giulia; Savoia, Alessandro Stuart

    2017-02-01

    Capacitive micromachined ultrasonic transducers (CMUTs) represent an effective alternative to piezoelectric transducers for medical ultrasound imaging applications. They are microelectromechanical devices fabricated using silicon micromachining techniques, developed in the last two decades in many laboratories. The interest for this novel transducer technology relies on its full compatibility with standard integrated circuit technology that makes it possible to integrate on the same chip the transducers and the electronics, thus enabling the realization of extremely low-cost and high-performance devices, including both 1-D or 2-D arrays. Being capacitive transducers, CMUTs require a high bias voltage to be properly operated in pulse-echo imaging applications. The typical bias supply residual ripple of high-quality high-voltage (HV) generators is in the millivolt range, which is comparable with the amplitude of the received echo signals, and it is particularly difficult to minimize. The aim of this paper is to analyze the classical CMUT biasing circuits, highlighting the features of each one, and to propose two novel HV generator architectures optimized for CMUT biasing applications. The first circuit proposed is an ultralow-residual ripple (generator that uses an extremely stable sinusoidal power oscillator topology. The second circuit employs a commercially available integrated step-up converter characterized by a particularly efficient switching topology. The circuit is used to bias the CMUT by charging a buffer capacitor synchronously with the pulsing sequence, thus reducing the impact of the switching noise on the received echo signals. The small area of the circuit (about 1.5 cm 2 ) makes it possible to generate the bias voltage inside the probe, very close to the CMUT, making the proposed solution attractive for portable applications. Measurements and experiments are shown to demonstrate the effectiveness of the new approaches presented.

  5. Micromachined ultrasonic droplet generator based on a liquid horn structure

    Science.gov (United States)

    Meacham, J. M.; Ejimofor, C.; Kumar, S.; Degertekin, F. L.; Fedorov, A. G.

    2004-05-01

    A micromachined ultrasonic droplet generator is developed and demonstrated for drop-on-demand fluid atomization. The droplet generator comprises a bulk ceramic piezoelectric transducer for ultrasound generation, a reservoir for the ejection fluid, and a silicon micromachined liquid horn structure as the nozzle. The nozzles are formed using a simple batch microfabrication process that involves wet etching of (100) silicon in potassium hydroxide solution. Device operation is demonstrated by droplet ejection of water through 30 μm orifices at 1.49 and 2.30 MHz. The finite-element simulations of the acoustic fields in the cavity and electrical impedance of the device are in agreement with the measurements and indicate that the device utilizes cavity resonances in the 1-5 MHz range in conjunction with acoustic wave focusing by the pyramidally shaped nozzles to achieve low power operation.

  6. Silicon microfabricated beam expander

    International Nuclear Information System (INIS)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-01-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

  7. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  8. A batch process micromachined thermoelectric energy harvester: fabrication and characterization

    International Nuclear Information System (INIS)

    Su, J; Goedbloed, M; Van Andel, Y; De Nooijer, M C; Elfrink, R; Wang, Z; Vullers, R J M; Leonov, V

    2010-01-01

    Micromachined thermopiles are considered as a cost-effective solution for energy harvesters working at a small temperature difference and weak heat flows typical for, e.g., the human body. They can be used for powering autonomous wireless sensor nodes in a body area network. In this paper, a micromachined thermoelectric energy harvester with 6 µm high polycrystalline silicon germanium (poly-SiGe) thermocouples fabricated on a 6 inch wafer is presented. An open circuit voltage of 1.49 V and an output power of 0.4 µW can be generated with 3.5 K temperature difference in a model of a wearable micromachined energy harvester of the discussed design, which has a die size of 1.0 mm × 2.5 mm inside a watch-size generator

  9. Modeling and identification of induction micromachines in microelectromechanical systems applications

    Energy Technology Data Exchange (ETDEWEB)

    Lyshevski, S.E. [Purdue University at Indianapolis (United States). Dept. of Electrical and Computer Engineering

    2002-11-01

    Microelectromechanical systems (MEMS), which integrate motion microstructures, radiating energy microdevices, controlling and signal processing integrated circuits (ICs), are widely used. Rotational and translational electromagnetic based micromachines are used in MEMS as actuators and sensors. Brushless high performance micromachines are the preferable choice in different MEMS applications, and therefore, synchronous and induction micromachines are the best candidates. Affordability, good performance characteristics (efficiency, controllability, robustness, reliability, power and torque densities etc.) and expanded operating envelopes result in a strong interest in the application of induction micromachines. In addition, induction micromachines can be easily fabricated using surface micromachining and high aspect ratio fabrication technologies. Thus, it is anticipated that induction micromachines, controlled using different control algorithms implemented using ICs, will be widely used in MEMS. Controllers can be implemented using specifically designed ICs to attain superior performance, maximize efficiency and controllability, minimize losses and electromagnetic interference, reduce noise and vibration, etc. In order to design controllers, the induction micromachine must be modeled, and its mathematical model parameters must be identified. Using microelectromechanics, nonlinear mathematical models are derived. This paper illustrates the application of nonlinear identification methods as applied to identify the unknown parameters of three phase induction micromachines. Two identification methods are studied. In particular, nonlinear error mapping technique and least squares identification are researched. Analytical and numerical results, as well as practical capabilities and effectiveness, are illustrated, identifying the unknown parameters of a three phase brushless induction micromotor. Experimental results fully support the identification methods. (author)

  10. A novel micromachined shadow mask system with self-alignment and gap control capability

    International Nuclear Information System (INIS)

    Hong, Jung Moo; Zou Jun

    2008-01-01

    We present a novel micromachined shadow mask system, which is capable of accurate self-alignment and mask-substrate gap control. The shadow mask system consists of a silicon shadow mask and a silicon carrier wafer with pyramidal cavities fabricated with bulk micromachining. Self-alignment and gap control of the shadow mask and the fabrication substrate can readily be achieved by using matching pairs of pyramidal cavities and steel spheres placed between. The layer-to-layer alignment accuracy of the new shadow mask system has been experimentally characterized and verified using both optical and atomic force microscopic measurements. As an application of this new shadow mask system, an organic thin-film transistor (OTFT) using pentacene as the semiconductor layer has been successfully fabricated and tested

  11. Micromachined tunable metamaterials: a review

    International Nuclear Information System (INIS)

    Liu, A Q; Zhu, W M; Tsai, D P; Zheludev, N I

    2012-01-01

    This paper reviews micromachined tunable metamaterials, whereby the tuning capabilities are based on the mechanical reconfiguration of the lattice and/or the metamaterial element geometry. The primary focus of this review is the feasibility of the realization of micromachined tunable metamaterials via structure reconfiguration and the current state of the art in the fabrication technologies of structurally reconfigurable metamaterial elements. The micromachined reconfigurable microstructures not only offer a new tuning method for metamaterials without being limited by the nonlinearity of constituent materials, but also enable a new paradigm of reconfigurable metamaterial-based devices with mechanical actuations. With recent development in nanomachining technology, it is possible to develop structurally reconfigurable metamaterials with faster tuning speed, higher density of integration and more flexible choice of the working frequencies. (review article)

  12. Demonstration of robust micromachined jet technology and its application to realistic flow control problems

    International Nuclear Information System (INIS)

    Chang, Sung Pil

    2006-01-01

    This paper describes the demonstration of successful fabrication and initial characterization of micromachined pressure sensors and micromachined jets (microjets) fabricated for use in macro flow control and other applications. In this work, the microfabrication technology was investigated to create a micromachined fluidic control system with a goal of application in practical fluids problems, such as UAV (Unmanned Aerial Vehicle)-scale aerodynamic control. Approaches of this work include : (1) the development of suitable micromachined synthetic jets (microjets) as actuators, which obviate the need to physically extend micromachined structures into an external flow ; and (2) a non-silicon alternative micromachining fabrication technology based on metallic substrates and lamination (in addition to traditional MEMS technologies) which will allow the realization of larger scale, more robust structures and larger array active areas for fluidic systems. As an initial study, an array of MEMS pressure sensors and an array of MEMS modulators for orifice-based control of microjets have been fabricated, and characterized. Both pressure sensors and modulators have been built using stainless steel as a substrate and a combination of lamination and traditional micromachining processes as fabrication technologies

  13. Demonstration of robust micromachined jet technology and its application to realistic flow control problems

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Sung Pil [Inha University, Incheon (Korea, Republic of)

    2006-04-15

    This paper describes the demonstration of successful fabrication and initial characterization of micromachined pressure sensors and micromachined jets (microjets) fabricated for use in macro flow control and other applications. In this work, the microfabrication technology was investigated to create a micromachined fluidic control system with a goal of application in practical fluids problems, such as UAV (Unmanned Aerial Vehicle)-scale aerodynamic control. Approaches of this work include : (1) the development of suitable micromachined synthetic jets (microjets) as actuators, which obviate the need to physically extend micromachined structures into an external flow ; and (2) a non-silicon alternative micromachining fabrication technology based on metallic substrates and lamination (in addition to traditional MEMS technologies) which will allow the realization of larger scale, more robust structures and larger array active areas for fluidic systems. As an initial study, an array of MEMS pressure sensors and an array of MEMS modulators for orifice-based control of microjets have been fabricated, and characterized. Both pressure sensors and modulators have been built using stainless steel as a substrate and a combination of lamination and traditional micromachining processes as fabrication technologies.

  14. Vascular tissue engineering by computer-aided laser micromachining.

    Science.gov (United States)

    Doraiswamy, Anand; Narayan, Roger J

    2010-04-28

    Many conventional technologies for fabricating tissue engineering scaffolds are not suitable for fabricating scaffolds with patient-specific attributes. For example, many conventional technologies for fabricating tissue engineering scaffolds do not provide control over overall scaffold geometry or over cell position within the scaffold. In this study, the use of computer-aided laser micromachining to create scaffolds for vascular tissue networks was investigated. Computer-aided laser micromachining was used to construct patterned surfaces in agarose or in silicon, which were used for differential adherence and growth of cells into vascular tissue networks. Concentric three-ring structures were fabricated on agarose hydrogel substrates, in which the inner ring contained human aortic endothelial cells, the middle ring contained HA587 human elastin and the outer ring contained human aortic vascular smooth muscle cells. Basement membrane matrix containing vascular endothelial growth factor and heparin was to promote proliferation of human aortic endothelial cells within the vascular tissue networks. Computer-aided laser micromachining provides a unique approach to fabricate small-diameter blood vessels for bypass surgery as well as other artificial tissues with complex geometries.

  15. X-ray microcalorimeter arrays fabricated by surface micromachining

    International Nuclear Information System (INIS)

    Hilton, G.C.; Beall, J.A.; Deiker, S.; Vale, L.R.; Doriese, W.B.; Beyer, Joern; Ullom, J.N.; Reintsema, C.D.; Xu, Y.; Irwin, K.D.

    2004-01-01

    We are developing arrays of Mo/Cu transition edge sensor-based detectors for use as X-ray microcalorimeters and sub-millimeter bolometers. We have fabricated 8x8 pixel X-ray microcalorimeter arrays using surface micromachining. Surface-micromachining techniques hold the promise of scalability to much larger arrays and may allow for the integration of in-plane multiplexer elements. In this paper we describe the surface micromachining process and recent improvements in the device geometry that provide for increased mechanical strength. We also present X-ray and heat pulse spectra collected using these detectors

  16. Optical wireless communications for micromachines

    Science.gov (United States)

    O'Brien, Dominic C.; Yuan, Wei Wen; Liu, Jing Jing; Faulkner, Grahame E.; Elston, Steve J.; Collins, Steve; Parry-Jones, Lesley A.

    2006-08-01

    A key challenge for wireless sensor networks is minimizing the energy required for network nodes to communicate with each other, and this becomes acute for self-powered devices such as 'smart dust'. Optical communications is a potentially attractive solution for such devices. The University of Oxford is currently involved in a project to build optical wireless links to smart dust. Retro-reflectors combined with liquid crystal modulators can be integrated with the micro-machine to create a low power transceiver. When illuminated from a base station a modulated beam is returned, transmitting data. Data from the base station can be transmitted using modulation of the illuminating beam and a receiver at the micro-machine. In this paper we outline the energy consumption and link budget considerations in the design of such micro-machines, and report preliminary experimental results.

  17. Development of micro capacitive accelerometer for subsurface microseismic measurement. Second Report; Micromachining ni yoru chika danseiha kenshutsu no tame no silicone yoryogata kasokudo sensor no seisaku. 2

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, M; Lim, G; Niitsuma, H; Esashi, M [Tohoku University, Sendai (Japan)

    1997-10-22

    Micromachining-aided manufacture is under way of a silicon capacitive accelerator sensor, high in sensitivity and broad in bandwidth, for detecting subsurface microseismic waves. The sensor detects acceleration by use of changes in capacities of the top and bottom capacitors generated when a spring-supported weight experiences displacement upon application of acceleration to the said weight. A diode bridge circuit is employed as the circuit for detecting acceleration. As for sensitivity of the sensor, when the virtual noise inputted into the electronic circuit is presumed at 1{mu}V and the circuit driving voltage at 5V, the sensor minimum detectability will be 2.5mgal in the presence of a 3{mu}m gap between the weight and an electrode plate. The natural vibration frequency is set at 1kHz. Such specifications may be realized using the current micromachining technology, and possibilities are that the bandwidth will be further expanded when the sensor is used in a servo-type configuration. The effort is still at the stage of acceleration sensor manufacturing, with a stopper just formed for the silicon weight. 9 refs., 6 figs., 1 tab.

  18. Studying the mechanism of micromachining by short pulsed laser

    Science.gov (United States)

    Gadag, Shiva

    The semiconductor materials like Si and the transparent dielectric materials like glass and quartz are extensively used in optoelectronics, microelectronics, and microelectromechanical systems (MEMS) industries. The combination of these materials often go hand in hand for applications in MEMS such as in chips for pressure sensors, charge coupled devices (CCD), and photovoltaic (PV) cells for solar energy generation. The transparent negative terminal of the solar cell is made of glass on one surface of the PV cell. The positive terminal (cathode) on the other surface of the solar cell is made of silicon with a glass negative terminal (anode). The digital watches and cell phones, LEDs, micro-lens, optical components, and laser optics are other examples for the application of silicon and or glass. The Si and quartz are materials extensively used in CCD and LED for digital cameras and CD players respectively. Hence, three materials: (1) a semiconductor silicon and transparent dielectrics,- (2) glass, and (3) quartz are chosen for laser micromachining as they have wide spread applications in microelectronics industry. The Q-switched, nanosecond pulsed lasers are most extensively used for micro-machining. The nanosecond type of short pulsed laser is less expensive for the end users than the second type, pico or femto, ultra-short pulsed lasers. The majority of the research work done on these materials (Si, SiO 2, and glass) is based on the ultra-short pulsed lasers. This is because of the cut quality, pin point precision of the drilled holes, formation of the nanometer size microstructures and fine features, and minimally invasive heat affected zone. However, there are many applications such as large surface area dicing, cutting, surface cleaning of Si wafers by ablation, and drilling of relatively large-sized holes where some associated heat affected zone due to melting can be tolerated. In such applications the nanosecond pulsed laser ablation of materials is very

  19. Laser Micromachining and Information Discovery Using a Dual Beam Interferometry

    Energy Technology Data Exchange (ETDEWEB)

    Theppakuttaikomaraswamy, Senthil P. [Iowa State Univ., Ames, IA (United States)

    2001-01-01

    Lasers have proven to be among the most promising tools for micromachining because they can process features down to the size of the laser wavelength (smaller than 1 micrometer) and they provide a non-contact technology for machining. The demand for incorporating in-situ diagnostics technology into the micromachining environment is driven by the increasing need for producing micro-parts of high quality and accuracy. Laser interferometry can be used as an on-line monitoring tool and it is the aim of this work to enhance the understanding and application of Michelson interferometry principle for the in-situ diagnostics of the machining depth on the sub-micron and micron scales. micromachining is done on two different materials and a comprehensive investigation is done to control the width and depth of the machined feature. To control the width of the feature, laser micromachining is done on copper and a detailed analysis is performed. The objective of this experiment is to make a precision mask for sputtering with an array of holes on it using an Nd:YAG laser of 532 nm wavelength. The diameter of the hole is 50 μm and the spacing between holes (the distance between the centers) is 100 μm. Michelson interferometer is integrated with a laser machining system to control the depth of machining. An excimer laser of 308 nm wavelength is used for micromachining. A He-Ne laser of 632.8 nm wavelength is used as the light source for the interferometer. Interference patterns are created due to the change in the path length between the two interferometer arms. The machined depth information is obtained from the interference patterns on an oscilloscope detected by a photodiode. To compare the predicted depth by the interferometer with the true machining depth, a surface profilometer is used to measure the actual machining depth on the silicon. It is observed that the depths of machining obtained by the surface profile measurement are in accordance with the interferometer

  20. Wafer scale nano-membrane supported on a silicon microsieve using thin-film transfer technology

    NARCIS (Netherlands)

    Unnikrishnan, S.; Jansen, Henricus V.; Berenschot, Johan W.; Elwenspoek, Michael Curt

    A new micromachining method to fabricate wafer scale nano-membranes is described. The delicate thin-film nano-membrane is supported on a robust silicon microsieve fabricated by plasma etching. The silicon sieve is micromachined independently of the thin-film, which is later transferred onto it by

  1. Micromachined piezoresistive inclinometer with oscillator-based integrated interface circuit and temperature readout

    International Nuclear Information System (INIS)

    Dalola, Simone; Ferrari, Vittorio; Marioli, Daniele

    2012-01-01

    In this paper a dual-chip system for inclination measurement is presented. It consists of a MEMS (microelectromechanical system) piezoresistive accelerometer manufactured in silicon bulk micromachining and a CMOS (complementary metal oxide semiconductor) ASIC (application specific integrated circuit) interface designed for resistive-bridge sensors. The sensor is composed of a seismic mass symmetrically suspended by means of four flexure beams that integrate two piezoresistors each to detect the applied static acceleration, which is related to inclination with respect to the gravity vector. The ASIC interface is based on a relaxation oscillator where the frequency and the duty cycle of a rectangular-wave output signal are related to the fractional bridge imbalance and the overall bridge resistance of the sensor, respectively. The latter is a function of temperature; therefore the sensing element itself can be advantageously used to derive information for its own thermal compensation. DC current excitation of the sensor makes the configuration unaffected by wire resistances and parasitic capacitances. Therefore, a modular system results where the sensor can be placed remotely from the electronics without suffering accuracy degradation. The inclination measurement system has been characterized as a function of the applied inclination angle at different temperatures. At room temperature, the experimental sensitivity of the system results in about 148 Hz/g, which corresponds to an angular sensitivity around zero inclination angle of about 2.58 Hz deg −1 . This is in agreement with finite element method simulations. The measured output fluctuations at constant temperature determine an equivalent resolution of about 0.1° at midrange. In the temperature range of 25–65 °C the system sensitivity decreases by about 10%, which is less than the variation due to the microsensor alone thanks to thermal compensation provided by the current excitation of the bridge and the

  2. A Reuse Evaluation for Solar-Cell Silicon Wafers via Shift Revolution and Tool Rotation Using Magnetic Assistance in Ultrasonic Electrochemical Micromachining

    Directory of Open Access Journals (Sweden)

    P. S. Pa

    2013-01-01

    Full Text Available A new reuse fabrication using a tool module with rotation and revolution through a process of magnetic assistance in ultrasonic electrochemical micromachining (UEMM for removal of the surface layers from silicon wafers of solar cells is demonstrated. The target of the proposed reuse fabrication method is to replace the current approach, which uses strong acid and grinding and may damage the physical structure of silicon wafers and pollute to the environment. A precisely engineered clean production approach to removal of surface microstructure layers from silicon wafers is to develop a mass production system for recycling defective or discarded silicon wafers of solar cells that can reduce pollution and cost. The high revolution speed of the shift with the high rotation speed of the designed tool increases the discharge mobility and improves the removal effect associated with the high feed rate of the workpiece. High frequency and high power of ultrasonic with large electrolyte flow rate and high magnetic strengths with a small distance between the two magnets provide a large discharge effect and good removal; only a short period of time is required to remove the epoxy film and Si3N4 layer easily and cleanly.

  3. Micromachined millimeter-wave photonic band-gap crystals

    International Nuclear Information System (INIS)

    Oezbay, E.; Michel, E.; Tuttle, G.; Biswas, R.; Sigalas, M.; Ho, K.

    1994-01-01

    We have developed a new technique for fabricating three-dimensional photonic band-gap crystals. Our method utilizes an orderly stacking of micromachined (110) silicon wafers to build the periodic structure. A structure with a full three-dimensional photonic band gap centered near 100 GHz was measured, with experimental results in good agreement with theoretical predictions. This basic approach described should be extendable to build structures with photonic band-gap frequencies ranging from 30 GHz to 3 THz

  4. Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

    Directory of Open Access Journals (Sweden)

    Cheng-Yang Lin

    2015-11-01

    Full Text Available The study investigates the design and fabrication of a micromachined radio frequency (RF capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz.

  5. Silicon integrated circuit process

    International Nuclear Information System (INIS)

    Lee, Jong Duck

    1985-12-01

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  6. Silicon integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Duck

    1985-12-15

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  7. Hybrid Integrated Platforms for Silicon Photonics

    Science.gov (United States)

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  8. Silicon hybrid integration

    International Nuclear Information System (INIS)

    Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

    2011-01-01

    Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

  9. High speed micromachining with high power UV laser

    Science.gov (United States)

    Patel, Rajesh S.; Bovatsek, James M.

    2013-03-01

    Increasing demand for creating fine features with high accuracy in manufacturing of electronic mobile devices has fueled growth for lasers in manufacturing. High power, high repetition rate ultraviolet (UV) lasers provide an opportunity to implement a cost effective high quality, high throughput micromachining process in a 24/7 manufacturing environment. The energy available per pulse and the pulse repetition frequency (PRF) of diode pumped solid state (DPSS) nanosecond UV lasers have increased steadily over the years. Efficient use of the available energy from a laser is important to generate accurate fine features at a high speed with high quality. To achieve maximum material removal and minimal thermal damage for any laser micromachining application, use of the optimal process parameters including energy density or fluence (J/cm2), pulse width, and repetition rate is important. In this study we present a new high power, high PRF QuasarR 355-40 laser from Spectra-Physics with TimeShiftTM technology for unique software adjustable pulse width, pulse splitting, and pulse shaping capabilities. The benefits of these features for micromachining include improved throughput and quality. Specific example and results of silicon scribing are described to demonstrate the processing benefits of the Quasar's available power, PRF, and TimeShift technology.

  10. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  11. Micromachined sensor and actuator research at Sandia`s Microelectronics Development Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Smith, J.H.

    1996-11-01

    An overview of the surface micromachining program at the Microelectronics Development Laboratory of Sandia National Laboratories is presented. Development efforts are underway for a variety of surface micromachined sensors and actuators for both defense and commercial applications. A technology that embeds micromechanical devices below the surface of the wafer prior to microelectronics fabrication has been developed for integrating microelectronics with surface-micromachined micromechanical devices. The application of chemical-mechanical polishing to increase the manufacturability of micromechanical devices is also presented.

  12. Manufacture of Radio Frequency Micromachined Switches with Annealing

    OpenAIRE

    Lin, Cheng-Yang; Dai, Ching-Liang

    2014-01-01

    The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspe...

  13. Effect of fluorocarbon self-assembled monolayer films on sidewall adhesion and friction of surface micromachines with impacting and sliding contact interfaces

    International Nuclear Information System (INIS)

    Xiang, H.; Komvopoulos, K.

    2013-01-01

    A self-assembled monolayer film consisting of fluoro-octyltrichlorosilane (FOTS) was vapor-phase deposited on Si(100) substrates and polycrystalline silicon (polysilicon) surface micromachines. The hydrophobic behavior and structural composition of the FOTS film deposited on Si(100) were investigated by goniometry and X-ray photoelectron spectroscopy, respectively. The effects of contact pressure, relative humidity, temperature, and impact/sliding cycles on the adhesive and friction behavior of uncoated and FOTS-coated polysilicon micromachines (referred to as the Si and FOTS/Si micromachines, respectively) were investigated under controlled loading and environmental conditions. FOTS/Si micromachines demonstrated much lower and stable adhesion than Si micromachines due to the highly hydrophobic and conformal FOTS film. Contrary to Si micromachines, sidewall adhesion of FOTS/Si micromachines demonstrated a weak dependence on relative humidity, temperature, and impact cycles. In addition, FOTS/Si micromachines showed low and stable adhesion and low static friction for significantly more sliding cycles than Si micromachines. The adhesive and static friction characteristics of Si and FOTS/Si micromachines are interpreted in the context of physicochemical surface changes, resulting in the increase of the real area of contact and a hydrophobic-to-hydrophilic transition of the surface chemical characteristics caused by nanoscale surface smoothening and the removal of the organic residue (Si micromachines) or the FOTS film (FOTS/Si micromachines) during repetitive impact and oscillatory sliding of the sidewall surfaces.

  14. Manufacturing microsystems-on-a-chip with 5-level surface micromachining technology

    Energy Technology Data Exchange (ETDEWEB)

    Sniegowski, J.; Rodgers, M.S.

    1998-05-01

    An agile microsystem manufacturing technology has been developed that provides unprecedented 5 levels of independent polysilicon surface-micromachine films for the designer. Typical surface-micromachining processes offer a maximum of 3 levels, making this the most complex surface-micromachining process technology developed to date. Leveraged from the extensive infrastructure present in the microelectronics industry, the manufacturing method of polysilicon surface-micromachining offers similar advantages of high-volume, high-reliability, and batch-fabrication to microelectromechanical systems (MEMS) as has been accomplished with integrated circuits (ICs). These systems, comprised of microscopic-sized mechanical elements, are laying the foundation for a rapidly expanding, multi-billion dollar industry 2 which impacts the automotive, consumer product, and medical industries to name only a few.

  15. A bulk micromachined lead zinconate titanate cantilever energy harvester with inter-digital IrO(x) electrodes.

    Science.gov (United States)

    Park, Jongcheol; Park, Jae Yeong

    2013-10-01

    A piezoelectric vibration energy harvester with inter-digital IrO(x) electrode was developed by using silicon bulk micromachining technology. Most PZT cantilever based energy harvesters have utilized platinum electrode material. However, the PZT fatigue characteristics and adhesion/delamination problems caused by the platinum electrode might be serious problem in reliability of energy harvester. To address these problems, the iridium oxide was newly applied. The proposed energy harvester was comprised of bulk micromachined silicon cantilever with 800 x 1000 x 20 microm3, which having a silicon supporting membrane, sol-gel-spin coated Pb(Zr52, Ti48)O3 thin film, and sputtered inter-digitally shaped IrO(x) electrodes, and silicon inertial mass with 1000 x 1000 x 500 microm3 to adjust its resonant frequency. The fabricated energy harvester generated 1 microW of electrical power to 470 komega of load resistance and 1.4 V(peak-to-peak) from a vibration of 0.4 g at 1.475 kHz. The corresponding power density was 6.25 mW x cm(-3) x g(-2). As expected, its electrical failure was significantly improved.

  16. The Laser MicroJet (LMJ): a multi-solution technology for high quality micro-machining

    Science.gov (United States)

    Mai, Tuan Anh; Richerzhagen, Bernold; Snowdon, Paul C.; Wood, David; Maropoulos, Paul G.

    2007-02-01

    The field of laser micromachining is highly diverse. There are many different types of lasers available in the market. Due to their differences in irradiating wavelength, output power and pulse characteristic they can be selected for different applications depending on material and feature size [1]. The main issues by using these lasers are heat damages, contamination and low ablation rates. This report examines on the application of the Laser MicroJet(R) (LMJ), a unique combination of a laser beam with a hair-thin water jet as a universal tool for micro-machining of MEMS substrates, as well as ferrous and non-ferrous materials. The materials include gallium arsenide (GaAs) & silicon wafers, steel, tantalum and alumina ceramic. A Nd:YAG laser operating at 1064 nm (infra red) and frequency doubled 532 nm (green) were employed for the micro-machining of these materials.

  17. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  18. Benzocyclobutene-based electric micromachines supported on microball bearings: Design, fabrication, and characterization

    Science.gov (United States)

    Modafe, Alireza

    This dissertation summarizes the research activities that led to the development of the first microball-bearing-supported linear electrostatic micromotor with benzocyclobutene (BCB) low-k polymer insulating layers. The primary application of this device is long-range, high-speed linear micropositioning. The future generations of this device include rotary electrostatic micromotors and microgenerators. The development of the first generation of microball-bearing-supported micromachines, including device theory, design, and modeling, material characterization, process development, device fabrication, and device test and characterization is presented. The first generation of these devices is based on a 6-phase, bottom-drive, linear, variable-capacitance micromotor (B-LVCM). The design of the electrical and mechanical components of the micromotor, lumped-circuit modeling of the device and electromechanical characteristics, including variable capacitance, force, power, and speed are presented. Electrical characterization of BCB polymers, characterization of BCB chemical mechanical planarization (CMP), development of embedded BCB in silicon (EBiS) process, and integration of device components using microfabrication techniques are also presented. The micromotor consists of a silicon stator, a silicon slider, and four stainless-steel microballs. The aligning force profile of the micromotor was extracted from simulated and measured capacitances of all phases. An average total aligning force of 0.27 mN with a maximum of 0.41 mN, assuming a 100 V peak-to-peak square-wave voltage, was measured. The operation of the micromotor was verified by applying square-wave voltages and characterizing the slider motion. An average slider speed of 7.32 mm/s when excited by a 40 Hz, 120 V square-wave voltage was reached without losing the synchronization. This research has a pivotal impact in the field of power microelectromechanical systems (MEMS). It establishes the foundation for the

  19. Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Y.; Fung, S.; Wang, Q.; Horsley, D. A. [Berkeley Sensor and Actuator Center, University of California, Davis, 1 Shields Avenue, Davis, California 95616 (United States); Tang, H.; Boser, B. E. [Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720 (United States); Tsai, J. M.; Daneman, M. [InvenSense, Inc., 1745 Technology Drive, San Jose, California 95110 (United States)

    2015-06-29

    This paper presents an ultrasonic fingerprint sensor based on a 24 × 8 array of 22 MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 μm pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be ∼14 kPa with a 28 V input, in reasonable agreement with predication from analytical calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 × 8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10 mm × 8 mm) at a 1.2 mm distance from the array.

  20. Microencapsulation of silicon cavities using a pulsed excimer laser

    KAUST Repository

    Sedky, Sherif M.; Tawfik, Hani H.; Ashour, Mohamed; Graham, Andrew B.; Provine, John W.; Wang, Qingxiao; Zhang, Xixiang; Howe, Roger T.

    2012-01-01

    This work presents a novel low thermal-budget technique for sealing micromachined cavities in silicon. Cavities are sealed without deposition, similar to the silicon surface-migration sealing process. In contrast to the 1100°C furnace anneal

  1. Surface-micromachined rotatable member having a low-contact-area hub

    Science.gov (United States)

    Rodgers, M. Steven; Sniegowski, Jeffry J.; Krygowski, Thomas W.

    2003-11-18

    A surface-micromachined rotatable member formed on a substrate and a method for manufacturing thereof are disclosed. The surface-micromachined rotatable member, which can be a gear or a rotary stage, has a central hub, and an annulus connected to the central hub by an overarching bridge. The hub includes a stationary axle support attached to the substrate and surrounding an axle. The axle is retained within the axle support with an air-gap spacing therebetween of generally 0.3 .mu.m or less. The rotatable member can be formed by alternately depositing and patterning layers of a semiconductor (e.g. polysilicon or a silicon-germanium alloy) and a sacrificial material and then removing the sacrificial material, at least in part. The present invention has applications for forming micromechanical or microelectromechanical devices requiring lower actuation forces, and providing improved reliability.

  2. Surface--micromachined rotatable member having a low-contact-area hub

    Science.gov (United States)

    Rodgers, M. Steven; Sniegowski, Jeffry J.

    2002-01-01

    A surface-micromachined rotatable member formed on a substrate and a method for manufacturing thereof are disclosed. The surface-micromachined rotatable member, which can be a gear or a rotary stage, has a central hub, and an annulus connected to the central hub by an overarching bridge. The hub includes a stationary axle support attached to the substrate and surrounding an axle. The axle is retained within the axle support with an air-gap spacing therebetween of generally 0.3 .mu.m or less. The rotatable member can be formed by alternately depositing and patterning layers of a semiconductor (e.g. polysilicon or a silicon-germanium alloy) and a sacrificial material and then removing the sacrificial material, at least in part. The present invention has applications for forming micromechanical or microelectromechanical devices requiring lower actuation forces, and providing improved reliability.

  3. InP membrane on silicon integration technology

    NARCIS (Netherlands)

    Smit, M.K.

    2013-01-01

    Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.

  4. Development of micro capacitive accelerometer for subsurface microseismic measurement; Micromachining ni yoru chika danseiha kenshutsu no tame no silicon yoryogata kasokudo sensor no seisaku

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, M; Niitsuma, H; Esashi, M [Tohoku University, Sendai (Japan). Faculty of Engineering

    1997-05-27

    A silicon capacitive accelerometer was fabricated to detect subsurface elastic waves by using micromachining technology. Characteristics required for it call for capability of detecting acceleration with amplitudes from 0.1 to 1 gal and flat amplitude characteristics in frequency bands of 10 Hz to several kHz. For the purpose of measuring transition phenomena, linear phase characteristics in the required bands must be guaranteed, cross sensitivity must be small, and resistance to water, pressure and heat is demanded. Sensitivity of the sensor is determined finally by noise level in a detection circuit. The sensor`s minimum detection capability was 40 mgal in the case of the distance between a weight and an electrode being 3 {mu}m. This specification value is a value realizable by the current micromachining technology. Dimensions for the weight and other members were decided with the natural frequency to make band width 2 kHz set to 4 kHz. Completion of the product has not been achieved yet, however, because of a problem that the weight gets stuck on the electrode plate in anode bonding in the assembly process. 7 refs., 5 figs., 1 tab.

  5. FY 1998 report on the R and D of micromachine technology. R and D of micromachine technology; 1998 nendo micromachine gijutsu no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    In the comprehensive investigational study of micromachine technology, the paper aims at clarifying the improvement of functional devices and the future development of micromachine technology for establishment of the technology needed to realize a micromachine system composing of small-functional elements for conducting diagnosis/cure/repair, movement and independent work in small portions in living organism, disaster site, etc. and a medical-use micromachine system to analyze/react on a trace of liquid. In this fiscal year, the following were carried out: 1) study of micromachine systems, 2) study of a medical-use micromachine system to analyze/react on a trace liquid, and 3) comprehensive investigational study. In 1), studies were made toward the minuteness and improvement of micro laser catheter and micro tactile sensor catheter as functional devices which become the main components of micro catheter for cerebrovascular diagnosis/therapy use and toward the minuteness and improvement of disaster relief use micromachine system. In 2), study was made of element technology of a micro-machine system having functions of sampling/analysis/reaction of a trace of liquid. (NEDO)

  6. Si Micro-turbine by Proton BeamWriting and Porous Silicon Micromachining

    International Nuclear Information System (INIS)

    Rajta, I.; Szilasi, S.Z.; Fekete, Z.

    2008-01-01

    aspect ratio, completely or partially released microelements embedded in a cavity or a channel, thereby enabling us to form mobile components in the microfluidic MEMS. Although the process opens a new way in micromachining, the widening of the implanted regions around the projected range limits the dimensions and the geometry of the processed devices. The described technique can be exploited in fabrication of various MEMS with embedded mobile elements. This work is the first demonstration of a silicon device containing a moving part made by proton beam writing. Acknowledgements The support of the Hungarian National Research Found (OTKA) via grants T047002, A080, M041939, M36324 and F042474; and EU co-funded Economic Competitiveness Operative Programme (GVOP-3.2.1.-2004-04-0402/3.0) is gratefully acknowledged. The authors also thank the contribution of Dr. A.L. Toth with SEM analysis and Mr. B. Forgacs with design and fabrication of plastic encapsulation of the microturbine chip

  7. Electroless porous silicon formation applied to fabrication of boron-silica-glass cantilevers

    DEFF Research Database (Denmark)

    Teva, Jordi; Davis, Zachary James; Hansen, Ole

    2010-01-01

    This work describes the characterization and optimization of anisotropic formation of porous silicon in large volumes (0.5-1 mm3) of silicon by an electroless wet etching technique. The main goal is to use porous silicon as a sacrificial volume for bulk micromachining processes, especially in cases...... where etching of the full wafer thickness is needed. The porous silicon volume is formed by a metal-assisted etching in a wet chemical solution composed of hydrogen peroxide (30%), hydrofluoric acid (40%) and ethanol. This paper focuses on optimizing the etching conditions in terms of maximizing...... for bio-chemical sensors. The porous silicon volume is formed in an early step of the fabrication process, allowing easy handling of the wafer during all of the micromachining processes in the process flow. In the final process step, the porous silicon is quickly etched by immersing the wafer in a KOH...

  8. Fully integrated low-loss band-pass filters for wireless applications

    International Nuclear Information System (INIS)

    Rais-Zadeh, M; Kapoor, A; Lavasani, H M; Ayazi, F

    2009-01-01

    Fully integrated low insertion loss micromachined band-pass filters are designed and fabricated on the silicon substrate (ρ = 10–20 Ω cm, ε r = 11.9) for UHF applications. Filters are made of silver, which has the highest conductivity of all metals, to minimize the ohmic loss. A detailed analysis for realizing low insertion loss and high out-of-band rejection filters using elliptic magnitude characteristics is presented, and a comprehensive model to take into account inductive parasitics of the interconnects is developed. Temperature characteristics of the filters are measured and show stable performance. The presented filters are different from the previously reported lumped element filters in that all filters are fully integrated on silicon substrate and occupy a remarkably smaller die area. Two filters are fabricated using the silver micromachining technique with center frequencies at 1.05 and 1.35 GHz. The filters have a constant 3 dB bandwidth of 300 MHz (28.6% and 22.2%) and an insertion loss of 1.4–1.7 dB. The low insertion loss and CMOS compatibility make the presented filters suitable candidates for radio frequency integrated circuits

  9. Project: Micromachined High-Frequency Circuits For Sub-mm-wave Sensors

    Science.gov (United States)

    Papapolymerou, Ioannis John

    2004-01-01

    A novel micromachined resonator at 45 GHz based on a defect in a periodic electromagnetic bandgap structure (EBG) and a two-pole Tchebysbev filter with 1.4% 0.15 dB equiripple bandwidth and 2.3 dB loss employing this resonator are presented in this letter. The periodic bandgap structure is realized on a 400 micron thick high-resistivity silicon wafer using deep reactive ion etching techniques. The resonator and filter can be accessed via coplanar waveguide feeds.

  10. Sensors and Micromachined Devices for the Automotive and New Markets: The Delphi Delco Electronics MEMS Story.

    Science.gov (United States)

    Logsdon, James

    2002-03-01

    This presentation will provide a brief history of the development of MEMS products and technology, beginning with the manifold absolute pressure sensor in the late seventies through the current variety of Delphi Delco Electronics sensors available today. The technology development of micromachining from uncompensated P plus etch stops to deep reactive ion etching and the technology development of wafer level packaging from electrostatic bonding to glass frit sealing and silicon to silicon direct bonding will be reviewed.

  11. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    Science.gov (United States)

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  12. A silicon integrated micro nano-positioning XY-stage for nano-manipulation

    International Nuclear Information System (INIS)

    Sun Lining; Wang Jiachou; Rong Weibin; Li Xinxin; Bao Haifei

    2008-01-01

    An integrated micro XY-stage with a 2 × 2 mm 2 movable table is designed and fabricated for application in nanometer-scale operation and nanometric positioning precision. The device integrates the functions of both actuating and sensing in a monolithic chip and is mainly composed of a silicon-based XY-stage, comb-drive actuator and a displacement sensor, which are developed by using double-sided bulk-micromachining technology. The high-aspect-ratio comb-driven XY-stage is achieved by deep reactive ion etching (DRIE) on both sides of the wafer. The displacement sensor is formed on four vertical sidewall surface piezoresistors with a full Wheatstone bridge circuit, where a novel fabrication process of a vertical sidewall surface piezoresistor is proposed. Comprehensive design and analysis of the comb actuator, the piezoresistive displacement sensor and the XY-stage are given in full detail, and the experimental results verify the design and fabrication of the device. The final realization of the device shows that the sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV µm −1 without amplification, and the linearity is better than 0.814%. Under 28.5 V driving voltage, a ±10 µm single-axis displacement is measured without crosstalk and the resonant frequency is measured at 983 Hz in air

  13. Integration of a silicon-based microprobe into a gear measuring instrument for accurate measurement of micro gears

    International Nuclear Information System (INIS)

    Ferreira, N; Krah, T; Jeong, D C; Kniel, K; Härtig, F; Metz, D; Dietzel, A; Büttgenbach, S

    2014-01-01

    The integration of silicon micro probing systems into conventional gear measuring instruments (GMIs) allows fully automated measurements of external involute micro spur gears of normal modules smaller than 1 mm. This system, based on a silicon microprobe, has been developed and manufactured at the Institute for Microtechnology of the Technische Universität Braunschweig. The microprobe consists of a silicon sensor element and a stylus which is oriented perpendicularly to the sensor. The sensor is fabricated by means of silicon bulk micromachining. Its small dimensions of 6.5 mm × 6.5 mm allow compact mounting in a cartridge to facilitate the integration into a GMI. In this way, tactile measurements of 3D microstructures can be realized. To enable three-dimensional measurements with marginal forces, four Wheatstone bridges are built with diffused piezoresistors on the membrane of the sensor. On the reverse of the membrane, the stylus is glued perpendicularly to the sensor on a boss to transmit the probing forces to the sensor element during measurements. Sphere diameters smaller than 300 µm and shaft lengths of 5 mm as well as measurement forces from 10 µN enable the measurements of 3D microstructures. Such micro probing systems can be integrated into universal coordinate measuring machines and also into GMIs to extend their field of application. Practical measurements were carried out at the Physikalisch-Technische Bundesanstalt by qualifying the microprobes on a calibrated reference sphere to determine their sensitivity and their physical dimensions in volume. Following that, profile and helix measurements were carried out on a gear measurement standard with a module of 1 mm. The comparison of the measurements shows good agreement between the measurement values and the calibrated values. This result is a promising basis for the realization of smaller probe diameters for the tactile measurement of micro gears with smaller modules. (paper)

  14. Monolithic integration of a micromachined piezoresistive flow sensor

    International Nuclear Information System (INIS)

    Li, Dan; Zhao, Tao; Yang, Zhenchuan; Zhang, Dacheng

    2010-01-01

    In this paper, a monolithic integrated piezoresistive flow sensor is presented, which was fabricated with an intermediate CMOS (complementary metal-oxide semiconductor) MEMS (micro electro mechanical system) process compatible with integrated pressure sensors. Four symmetrically arranged silicon diaphragms with piezoresistors on them were used to sense the drag force induced by the input gas flow. A signal conditioning CMOS circuit with a temperature compensation module was designed and fabricated simultaneously on the same chip with an increase of the total chip area by only 35%. An extra step of boron implantation and annealing was inserted into the standard CMOS process to form the piezoresistors. KOH anisotropic etching from the backside and deep reactive ion etching (DRIE) from the front side were combined to realize the silicon diaphragms. The integrated flow sensor was packaged and tested. The testing results indicated that the addition of piezoresistor formation and structure releasing did not significantly change any of the circuitry characteristics. The measured sensor output has a quadratic relation with the input flow rate of the fluid as predicted. The tested resolution of the sensor is less than 0.1 L min −1 with a measurement range of 0.1–5 L min −1 and the sensitivity is better than 40 mV per (L min −1 ) with a measurement range of 4–5 L min −1 . The measured noise floor of the sensor is 21.7 µV rtHz −1 .

  15. Silicon Micromachined Sensor for Broadband Vibration Analysis

    Science.gov (United States)

    Gutierrez, Adolfo; Edmans, Daniel; Cormeau, Chris; Seidler, Gernot; Deangelis, Dave; Maby, Edward

    1995-01-01

    The development of a family of silicon based integrated vibration sensors capable of sensing mechanical resonances over a broad range of frequencies with minimal signal processing requirements is presented. Two basic general embodiments of the concept were designed and fabricated. The first design was structured around an array of cantilever beams and fabricated using the ARPA sponsored multi-user MEMS processing system (MUMPS) process at the Microelectronics Center of North Carolina (MCNC). As part of the design process for this first sensor, a comprehensive finite elements analysis of the resonant modes and stress distribution was performed using PATRAN. The dependence of strain distribution and resonant frequency response as a function of Young's modulus in the Poly-Si structural material was studied. Analytical models were also studied. In-house experimental characterization using optical interferometry techniques were performed under controlled low pressure conditions. A second design, intended to operate in a non-resonant mode and capable of broadband frequency response, was proposed and developed around the concept of a cantilever beam integrated with a feedback control loop to produce a null mode vibration sensor. A proprietary process was used to integrat a metal-oxide semiconductor (MOS) sensing device, with actuators and a cantilever beam, as part of a compatible process. Both devices, once incorporated as part of multifunction data acquisition and telemetry systems will constitute a useful system for NASA launch vibration monitoring operations. Satellite and other space structures can benefit from the sensor for mechanical condition monitoring functions.

  16. A micromachined surface stress sensor with electronic readout

    NARCIS (Netherlands)

    Carlen, Edwin; Weinberg, M.S.; Zapata, A.M.; Borenstein, J.T.

    2008-01-01

    A micromachined surface stress sensor has been fabricated and integrated off chip with a low-noise, differential capacitance, electronic readout circuit. The differential capacitance signal is modulated with a high frequency carrier signal, and the output signal is synchronously demodulated and

  17. Analog integrated circuit for micro-gyro interface realized by multi-chip service in Japan; Multi chip service ni yoru micro gyro interface shuseki kairo no sekkei to shisaku

    Energy Technology Data Exchange (ETDEWEB)

    Maenaka, K.; Fujita, T.; Okamoto, K.; Maeda, M. [Himeji Institute of Technology, Hyogo (Japan)

    1998-10-01

    This paper deals with an analog integrated circuit for micro-machined gyroscopes with capacitive output. The Integrated circuit was fabricated as a part of the first project from the `Micromachining Multi-Chip Service Cooperative Re-search Committee` organized by The Institute of Electrical Engineers Japan. This multi-chip service project offers a master slice chip with an equivalent of 9 blocks of operational amplifier circuits. Our integrated circuit includes a modulator, demodulator and synchronous rectifier for detecting small changes in the capacitance of a silicon gyroscope. In the paper, the experimental results of fabricated samples will be described. 13 refs., 15 figs.

  18. MEMS-based silicon cantilevers with integrated electrothermal heaters for airborne ultrafine particle sensing

    Science.gov (United States)

    Wasisto, Hutomo Suryo; Merzsch, Stephan; Waag, Andreas; Peiner, Erwin

    2013-05-01

    The development of low-cost and low-power MEMS-based cantilever sensors for possible application in hand-held airborne ultrafine particle monitors is described in this work. The proposed resonant sensors are realized by silicon bulk micromachining technology with electrothermal excitation, piezoresistive frequency readout, and electrostatic particle collection elements integrated and constructed in the same sensor fabrication process step of boron diffusion. Built-in heating resistor and full Wheatstone bridge are set close to the cantilever clamp end for effective excitation and sensing, respectively, of beam deflection. Meanwhile, the particle collection electrode is located at the cantilever free end. A 300 μm-thick, phosphorus-doped silicon bulk wafer is used instead of silicon-on-insulator (SOI) as the starting material for the sensors to reduce the fabrication costs. To etch and release the cantilevers from the substrate, inductively coupled plasma (ICP) cryogenic dry etching is utilized. By controlling the etching parameters (e.g., temperature, oxygen content, and duration), cantilever structures with thicknesses down to 10 - 20 μm are yielded. In the sensor characterization, the heating resistor is heated and generating thermal waves which induce thermal expansion and further cause mechanical bending strain in the out-of-plane direction. A resonant frequency of 114.08 +/- 0.04 kHz and a quality factor of 1302 +/- 267 are measured in air for a fabricated rectangular cantilever (500x100x13.5 μm3). Owing to its low power consumption of a few milliwatts, this electrothermal cantilever is suitable for replacing the current external piezoelectric stack actuator in the next generation of the miniaturized cantilever-based nanoparticle detector (CANTOR).

  19. Photonic integration and photonics-electronics convergence on silicon platform

    CERN Document Server

    Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

    2015-01-01

    Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

  20. Micromachined Polycrystalline Si Thermopiles in a T-shirt

    Directory of Open Access Journals (Sweden)

    Vladimir Leonov

    2011-04-01

    Full Text Available The technology for in-plane poly-Si thermopiles has been developed. The bulk-micromachined thermopiles are located between two Si bars and connected thermally with those bars through thin-film thermal shunts. The patterned strips of thermocouple material together with thermal shunts form bridges between Si bars. Two versions of a thermoelectric generator (TEG with micromachined thermopiles have been assembled and tested on a person’s wrist, and when integrated in a T-shirt. The TEG still produces less than 1 μW in the office, but at ambient temperatures below 11-13 °C it produces more than 1 μW at a voltage of more than 2 V on the matched load. The new way of integration of wearable TEG in clothing is shown. The TEG is located under the textile, and the fabric is used as a flexible radiator.

  1. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  2. Determination of young's modulus of PZT and CO80Ni20 thin films by means of micromachined cantilevers

    NARCIS (Netherlands)

    Nazeer, H.; Abelmann, Leon; Tas, Niels Roelof; van Honschoten, J.W.; Siekman, Martin Herman; Elwenspoek, Michael Curt

    2009-01-01

    This paper presents a technique to determine the Young’s modulus and residual stress of thin films using a simple micromachined silicon cantilever as the test structure. An analytical relation was developed based on the shift in resonance frequency caused by the addition of a thin film on the

  3. Mid-infrared integrated photonics on silicon: a perspective

    Directory of Open Access Journals (Sweden)

    Lin Hongtao

    2017-12-01

    Full Text Available The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

  4. Micromachined capacitive ultrasonic immersion transducer array

    Science.gov (United States)

    Jin, Xuecheng

    Capacitive micromachined ultrasonic transducers (cMUTs) have emerged as an attractive alternative to conventional piezoelectric ultrasonic transducers. They offer performance advantages of wide bandwidth and sensitivity that have heretofore been attainable. In addition, micromachining technology, which has benefited from the fast-growing microelectronics industry, enables cMUT array fabrication and electronics integration. This thesis describes the design and fabrication of micromachined capacitive ultrasonic immersion transducer arrays. The basic transducer electrical equivalent circuit is derived from Mason's theory. The effects of Lamb waves and Stoneley waves on cross coupling and acoustic losses are discussed. Electrical parasitics such as series resistance and shunt capacitance are also included in the model of the transducer. Transducer fabrication technology is systematically studied. Device dimension control in both vertical and horizontal directions, process alternatives and variations in membrane formation, via etch and cavity sealing, and metalization as well as their impact on transducer performance are summarized. Both 64 and 128 element 1-D array transducers are fabricated. Transducers are characterized in terms of electrical input impedance, bandwidth, sensitivity, dynamic range, impulse response and angular response, and their performance is compared with theoretical simulation. Various schemes for cross coupling reduction is analyzed, implemented, and verified with both experiments and theory. Preliminary results of immersion imaging are presented using 64 elements 1-D array transducers for active source imaging.

  5. Enhancing structural integrity of adhesive bonds through pulsed laser surface micro-machining

    KAUST Repository

    Diaz, Edwin Hernandez

    2015-06-01

    Enhancing the effective peel resistance of plastically deforming adhesive joints through laser-based surface micro-machining Edwin Hernandez Diaz Inspired by adhesion examples commonly found in nature, we reached out to examine the effect of different kinds of heterogeneous surface properties that may replicate this behavior and the mechanisms at work. In order to do this, we used pulsed laser ablation on copper substrates (CuZn40) aiming to increase adhesion for bonding. A Yb-fiber laser was used for surface preparation of the substrates, which were probed with a Scanning Electron Microscope (SEM) and X-ray Photoelectron Spectroscopy (XPS). Heterogeneous surface properties were devised through the use of simplified laser micromachined patterns which may induce sequential events of crack arrest propagation, thereby having a leveraging effect on dissipation. The me- chanical performance of copper/epoxy joints with homogeneous and heterogeneous laser micromachined interfaces was then analyzed using the T-peel test. Fractured surfaces were analyzed using SEM to resolve the mechanism of failure and adhesive penetration within induced surface asperities from the treatment. Results confirm positive modifications of the surface morphology and chemistry from laser ablation that enable mechanical interlocking and cohesive failure within the adhesive layer. Remarkable improvements of apparent peel energy, bond toughness, and effective peel force were appreciated with respect to sanded substrates as control samples.

  6. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    -division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-oninsulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror......, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained...

  7. Thermally-isolated silicon-based integrated circuits and related methods

    Science.gov (United States)

    Wojciechowski, Kenneth; Olsson, Roy H.; Clews, Peggy J.; Bauer, Todd

    2017-05-09

    Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

  8. Method of making thermally-isolated silicon-based integrated circuits

    Science.gov (United States)

    Wojciechowski, Kenneth; Olsson, Roy; Clews, Peggy J.; Bauer, Todd

    2017-11-21

    Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

  9. Silicon wafers for integrated circuit process

    OpenAIRE

    Leroy , B.

    1986-01-01

    Silicon as a substrate material will continue to dominate the market of integrated circuits for many years. We first review how crystal pulling procedures impact the quality of silicon. We then investigate how thermal treatments affect the behaviour of oxygen and carbon, and how, as a result, the quality of silicon wafers evolves. Gettering techniques are then presented. We conclude by detailing the requirements that wafers must satisfy at the incoming inspection.

  10. Long-wavelength III-V/silicon photonic integrated circuits

    NARCIS (Netherlands)

    Roelkens, G.C.; Kuyken, B.; Leo, F.; Hattasan, N.; Ryckeboer, E.M.P.; Muneeb, M.; Hu, C.L.; Malik, A.; Hens, Z.; Baets, R.G.F.; Shimura, Y.; Gencarelli, F.; Vincent, B.; Loo, van de R.; Verheyen, P.A.; Lepage, G.; Campenhout, van J.; Cerutti, L.; Rodriquez, J.B.; Tournie, E.; Chen, X; Nedeljkovic, G.; Mashanovich, G.; Liu, X.; Green, W.S.

    2013-01-01

    We review our work in the field of short-wave infrared and mid-infrared photonic integrated circuits for applications in spectroscopic sensing systems. Passive silicon waveguide circuits, GeSn photodetectors, the integration of III-V and IV-VI semiconductors on these circuits, and silicon nonlinear

  11. Silicon integrated circuits part A : supplement 2

    CERN Document Server

    Kahng, Dawon

    1981-01-01

    Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters-physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This public

  12. Porous siliconformation and etching process for use in silicon micromachining

    Science.gov (United States)

    Guilinger, Terry R.; Kelly, Michael J.; Martin, Jr., Samuel B.; Stevenson, Joel O.; Tsao, Sylvia S.

    1991-01-01

    A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%.

  13. Proceedings of the International Conference on Integrated Micro/Nanotechnology for Space Applications

    Science.gov (United States)

    1995-01-01

    The recent evolution of microelectronic technologies coupled with the growth of micro-electro-mechanical systems (MEMS) has had significant impact in the commercial sector. The focus of this conference was to anticipate and extend the incorporation of nano-electronics and MEMS into application specific integrated microinstruments (ASIM's) in space systems. Presentations ranged from mission application of nano-satellites to silicon micromachining for photonic applications.

  14. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    DEFF Research Database (Denmark)

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

  15. Micromachining of buried micro channels in silicon

    NARCIS (Netherlands)

    de Boer, Meint J.; Tjerkstra, R.W.; Berenschot, Johan W.; Jansen, Henricus V.; Burger, G.J.; Burger, G.J.; Gardeniers, Johannes G.E.; Elwenspoek, Michael Curt; van den Berg, Albert

    A new method for the fabrication of micro structures for fluidic applications, such as channels, cavities, and connector holes in the bulk of silicon wafers, called buried channel technology (BCT), is presented in this paper. The micro structures are constructed by trench etching, coating of the

  16. Flexible integration of free-standing nanowires into silicon photonics.

    Science.gov (United States)

    Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

    2017-06-14

    Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

  17. Micro filtration membrane sieve with silicon micro machining for industrial and biomedical applications

    NARCIS (Netherlands)

    van Rijn, C.J.M.; Elwenspoek, Michael Curt

    1995-01-01

    With the use of silicon micromachining an inorganic membrane sieve for microfiltration is constructed, having a siliconnitride membrane layer with thickness typically 1 pm and perforations typically between 0.5 pm and 10 pm in diameter. As a support a -silicon wafer with openings of loo0 pm in

  18. The Development of Micromachined Gyroscope Structure and Circuitry Technology

    Directory of Open Access Journals (Sweden)

    Dunzhu Xia

    2014-01-01

    Full Text Available This review surveys micromachined gyroscope structure and circuitry technology. The principle of micromachined gyroscopes is first introduced. Then, different kinds of MEMS gyroscope structures, materials and fabrication technologies are illustrated. Micromachined gyroscopes are mainly categorized into micromachined vibrating gyroscopes (MVGs, piezoelectric vibrating gyroscopes (PVGs, surface acoustic wave (SAW gyroscopes, bulk acoustic wave (BAW gyroscopes, micromachined electrostatically suspended gyroscopes (MESGs, magnetically suspended gyroscopes (MSGs, micro fiber optic gyroscopes (MFOGs, micro fluid gyroscopes (MFGs, micro atom gyroscopes (MAGs, and special micromachined gyroscopes. Next, the control electronics of micromachined gyroscopes are analyzed. The control circuits are categorized into typical circuitry and special circuitry technologies. The typical circuitry technologies include typical analog circuitry and digital circuitry, while the special circuitry consists of sigma delta, mode matching, temperature/quadrature compensation and novel special technologies. Finally, the characteristics of various typical gyroscopes and their development tendency are discussed and investigated in detail.

  19. Integrated double-sided silicon microstrip detectors

    Directory of Open Access Journals (Sweden)

    Perevertailo V. L.

    2011-11-01

    Full Text Available The problems of design, technology and manufacturing double-sided silicon microstrip detectors using standard equipment production line in mass production of silicon integrated circuits are considered. The design of prototype high-energy particles detector for experiment ALICE (CERN is presented. The parameters of fabricated detectors are comparable with those of similar foreign detectors, but they are distinguished by lesser cost.

  20. Materials issues in silicon integrated circuit processing

    International Nuclear Information System (INIS)

    Wittmer, M.; Stimmell, J.; Strathman, M.

    1986-01-01

    The symposium on ''Materials Issues in Integrated Circuit Processing'' sought to bring together all of the materials issued pertinent to modern integrated circuit processing. The inherent properties of the materials are becoming an important concern in integrated circuit manufacturing and accordingly research in materials science is vital for the successful implementation of modern integrated circuit technology. The session on Silicon Materials Science revealed the advanced stage of knowledge which topics such as point defects, intrinsic and extrinsic gettering and diffusion kinetics have achieved. Adaption of this knowledge to specific integrated circuit processing technologies is beginning to be addressed. The session on Epitaxy included invited papers on epitaxial insulators and IR detectors. Heteroepitaxy on silicon is receiving great attention and the results presented in this session suggest that 3-d integrated structures are an increasingly realistic possibility. Progress in low temperature silicon epitaxy and epitaxy of thin films with abrupt interfaces was also reported. Diffusion and Ion Implantation were well presented. Regrowth of implant-damaged layers and the nature of the defects which remain after regrowth were discussed in no less than seven papers. Substantial progress was also reported in the understanding of amorphising boron implants and the use of gallium implants for the formation of shallow p/sup +/ -layers

  1. Development of a Novel Transparent Flexible Capacitive Micromachined Ultrasonic Transducer

    Directory of Open Access Journals (Sweden)

    Da-Chen Pang

    2017-06-01

    Full Text Available This paper presents the world’s first transparent flexible capacitive micromachined ultrasonic transducer (CMUT that was fabricated through a roll-lamination technique. This polymer-based CMUT has advantages of transparency, flexibility, and non-contacting detection which provide unique functions in display panel applications. Comprising an indium tin oxide-polyethylene terephthalate (ITO-PET substrate, SU-8 sidewall and vibrating membranes, and silver nanowire transparent electrode, the transducer has visible-light transmittance exceeding 80% and can operate on curved surfaces with a 40 mm radius of curvature. Unlike the traditional silicon-based high temperature process, the CMUT can be fabricated on a flexible substrate at a temperature below 100 °C to reduce residual stress introduced at high temperature. The CMUT on the curved surfaces can detect a flat target and finger at distances up to 50 mm and 40 mm, respectively. The transparent flexible CMUT provides a better human-machine interface than existing touch panels because it can be integrated with a display panel for non-contacting control in a health conscious environment and the flexible feature is critical for curved display and wearable electronics.

  2. A micromachined calorimetric gas sensor: an application of electrodeposited nanostructured palladium for the detection of combustible gases.

    Science.gov (United States)

    Bartlett, Philip N; Guerin, Samuel

    2003-01-01

    Palladium films with regular nanoarchitectures were electrochemically deposited from the hexagonal (H1) lyotropic liquid crystalline phase of the nonionic surfactant octaethyleneglycol monohexadecyl ether (C16EO8) onto micromachined silicon hotplate structures. The H1-e Pd films were shown to have high surface areas (approximately 28 m2 g(-1)) and to act as effective and stable catalysts for the detection of methane in air on heating to 500 degrees C. The response of the H1-e Pd-coated planar pellistors was found to be linearly proportional to the concentration of methane between 0 and 2.5% in air with a detection limit below 0.125%. Our results show that the electrochemical deposition of nanostructured metal films offers a promising approach to the fabrication of micromachined calorimetric gas sensors for combustible gases.

  3. High efficiency on-chip Dielectric Resonator Antennna using micromachining technology

    KAUST Repository

    Sallam, Mai O.

    2015-10-26

    In this paper, a novel cylindrical Dielectric Resonator Antenna (DRA) operating at 60 GHz is introduced. The antenna is fabricated using a high-resistivity silicon wafer. The DR is defined in the wafer using micromachining technology. The feeding network is located at the other side of the wafer. The proposed antenna is simulated using HFSS and the results are verified by measurements. The antenna radiation is mainly along the broadside direction. The measured gain, radiation efficiency, and bandwidth are 7 dBi, 74.65%, and 2.23 GHz respectively. The antenna is characterized by high polarization purity where the maximum cross-polarization is -15 dB. © 2015 IEEE.

  4. High efficiency on-chip Dielectric Resonator Antennna using micromachining technology

    KAUST Repository

    Sallam, Mai O.; Serry, Mohamed; Shamim, Atif; De Raedt, Walter; Sedky, Sherif; Vandenbosch, Guy A. E.; Soliman, Ezzeldin A.

    2015-01-01

    In this paper, a novel cylindrical Dielectric Resonator Antenna (DRA) operating at 60 GHz is introduced. The antenna is fabricated using a high-resistivity silicon wafer. The DR is defined in the wafer using micromachining technology. The feeding network is located at the other side of the wafer. The proposed antenna is simulated using HFSS and the results are verified by measurements. The antenna radiation is mainly along the broadside direction. The measured gain, radiation efficiency, and bandwidth are 7 dBi, 74.65%, and 2.23 GHz respectively. The antenna is characterized by high polarization purity where the maximum cross-polarization is -15 dB. © 2015 IEEE.

  5. Advanced technology trend survey of micromachines in Europe; Oshu ni okeru micromachine sentan gijutsu doko chosa

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-02-01

    In this research survey, the development trend of micromachine technology in Europe was surveyed, development level of micromachine technology of European companies was grasped, and practical application fields of their target were investigated. Technology development level of private companies in Japan`s national projects and practical application fields of Japan`s target were arranged. Trends of micromachine technology development are compared between Japanese companies and European companies. Among micromachine technology development projects in Europe, ``8520 MUST`` is a part of the ESPRIT Project. About 40,000 companies among about 170,000 companies in whole Europe are relating to the MUST Project. The main fields include the manufacturing technology, process control of machines, technology of safety, sensor technology in environmental fields, and automotive technology. The marketing fields of application include the automobile, military technology, home automation, industrial process, medical technology, environmental technology, and games. The results can be compared with the direction of research and development in Japan. 22 figs., 8 tabs.

  6. Electroless porous silicon formation applied to fabrication of boron–silica–glass cantilevers

    International Nuclear Information System (INIS)

    Teva, J; Davis, Z J; Hansen, O

    2010-01-01

    This work describes the characterization and optimization of anisotropic formation of porous silicon in large volumes (0.5–1 mm 3 ) of silicon by an electroless wet etching technique. The main goal is to use porous silicon as a sacrificial volume for bulk micromachining processes, especially in cases where etching of the full wafer thickness is needed. The porous silicon volume is formed by a metal-assisted etching in a wet chemical solution composed of hydrogen peroxide (30%), hydrofluoric acid (40%) and ethanol. This paper focuses on optimizing the etching conditions in terms of maximizing the etching rate and reproducibility of the etching. In addition to that, a study of the morphology of the pore that is obtained by this technique is presented. The results from the characterization of the process are applied to the fabrication of boron–silica–glass cantilevers that serve as a platform for bio-chemical sensors. The porous silicon volume is formed in an early step of the fabrication process, allowing easy handling of the wafer during all of the micromachining processes in the process flow. In the final process step, the porous silicon is quickly etched by immersing the wafer in a KOH solution

  7. Fabrication and Characterization of Capacitive Micromachined Ultrasonic Transducers with Low-Temperature Wafer Direct Bonding

    Directory of Open Access Journals (Sweden)

    Xiaoqing Wang

    2016-12-01

    Full Text Available This paper presents a fabrication method of capacitive micromachined ultrasonic transducers (CMUTs by wafer direct bonding, which utilizes both the wet chemical and O2plasma activation processes to decrease the bonding temperature to 400 °C. Two key surface properties, the contact angle and surface roughness, are studied in relation to the activation processes, respectively. By optimizing the surface activation parameters, a surface roughness of 0.274 nm and a contact angle of 0° are achieved. The infrared images and static deflection of devices are assessed to prove the good bonding effect. CMUTs having silicon membranes with a radius of 60 μm and a thickness of 2 μm are fabricated. Device properties have been characterized by electrical and acoustic measurements to verify their functionality and thus to validate this low-temperature process. A resonant frequency of 2.06 MHz is obtained by the frequency response measurements. The electrical insertion loss and acoustic signal have been evaluated. This study demonstrates that the CMUT devices can be fabricated by low-temperature wafer direct bonding, which makes it possible to integrate them directly on top of integrated circuit (IC substrates.

  8. The micromachined logo of Atomki

    International Nuclear Information System (INIS)

    Rajta, I.; Szilasi, S.Z.

    2006-01-01

    Complete text of publication follows. Proton Beam Micromachining, also known as P-beam Writing, is a direct write 3- dimensional lithographic technique. Conventional resist types are PMMA (polymethylmethacrylate), and SU-8 (of MicroChem Corp.); they are positive and negative resists, respectively. In this work we used SU-8, the most common negative resist material. SU-8 was spun on a flat surface, typically Silicon or glass. A direct write proton beam was scanned over an arbitary structure (the Atomki logo can be replaced by any other structure), which produces chain scissioning in the polymer. Post exposure bake (PEB) is usually needed in case of conventional optical lithography, but using protons this bake is done in situ as the ions heat up the sample in vacuum. Subsequently chemical etching takes place, the solvent is available at MicroChem Corp. The schematic diagram of the above described micromachining process is shown on Fig. 1. The irradiation requires a scanning proton microbeam system equipped with suitable beam scanning and blanking facilities. This is available in the Institute, our setup has been upgraded from doublet to triplet focusing system (Oxford Microbeams Ltd.). For scanning we use a DIO card (PCI-6731 of National Instruments), and the IonScan software [1]. Sample preparation was carried out at our 'semi clean' room. This is also where chemical development of the samples and the optical microscopy have been done too. A Zeiss Axio Imager microscope is available (equipped with 5 objective lenses, 4 different contrast methods, transmitted or reflected light illumination). Fig. 2. shows a typical example of the Atomki logo. This is a bright field image, a number of different nice and colourful images can be produced with the other contrast techniques (for more images see the Institute website: http://www.atomki.hu/ ). (author)

  9. Physics-based signal processing algorithms for micromachined cantilever arrays

    Science.gov (United States)

    Candy, James V; Clague, David S; Lee, Christopher L; Rudd, Robert E; Burnham, Alan K; Tringe, Joseph W

    2013-11-19

    A method of using physics-based signal processing algorithms for micromachined cantilever arrays. The methods utilize deflection of a micromachined cantilever that represents the chemical, biological, or physical element being detected. One embodiment of the method comprises the steps of modeling the deflection of the micromachined cantilever producing a deflection model, sensing the deflection of the micromachined cantilever and producing a signal representing the deflection, and comparing the signal representing the deflection with the deflection model.

  10. 3D capacitive tactile sensor using DRIE micromachining

    Science.gov (United States)

    Chuang, Chiehtang; Chen, Rongshun

    2005-07-01

    This paper presents a three dimensional micro capacitive tactile sensor that can detect normal and shear forces which is fabricated using deep reactive ion etching (DRIE) bulk silicon micromachining. The tactile sensor consists of a force transmission plate, a symmetric suspension system, and comb electrodes. The sensing character is based on the changes of capacitance between coplanar sense electrodes. High sensitivity is achieved by using the high aspect ratio interdigital electrodes with narrow comb gaps and large overlap areas. The symmetric suspension mechanism of this sensor can easily solve the coupling problem of measurement and increase the stability of the structure. In this paper, the sensor structure is designed, the capacitance variation of the proposed device is theoretically analyzed, and the finite element analysis of mechanical behavior of the structures is performed.

  11. Micromachined On-Chip Dielectric Resonator Antenna Operating at 60 GHz

    KAUST Repository

    Sallam, Mai

    2015-06-01

    This paper presents a novel cylindrical Dielectric Resonator Antenna (DRA) suitable for millimeter-wave on-chip systems. The antenna was fabricated from a single high resistivity silicon wafer via micromachining technology. The new antenna was characterized using HFSS and experimentally with good agreement been found between the simulations and experiment. The proposed DRA has good radiation characteristics, where its gain and radiation efficiency are 7 dBi and 79.35%, respectively. These properties are reasonably constant over the working frequency bandwidth of the antenna. The return loss bandwidth was 2.23 GHz, which corresponds to 3.78% around 60 GHz. The antenna was primarily a broadside radiator with -15 dB cross polarization level.

  12. Polyimide as a versatile enabling material for microsystems fabrication: surface micromachining and electrodeposited nanowires integration

    Science.gov (United States)

    Walewyns, Thomas; Reckinger, Nicolas; Ryelandt, Sophie; Pardoen, Thomas; Raskin, Jean-Pierre; Francis, Laurent A.

    2013-09-01

    The interest of using polyimide as a sacrificial and anchoring layer is demonstrated for post-processing surface micromachining and for the incorporation of metallic nanowires into microsystems. In addition to properties like a high planarization factor, a good resistance to most non-oxidizing acids and bases, and CMOS compatibility, polyimide can also be used as a mold for nanostructures after ion track-etching. Moreover, specific polyimide grades, such as PI-2611 from HD Microsystems™, involve a thermal expansion coefficient similar to silicon and low internal stress. The process developed in this study permits higher gaps compared to the state-of-the-art, limits stiction problems with the substrate and is adapted to various top-layer materials. Most metals, semiconductors or ceramics will not be affected by the oxygen plasma required for polyimide etching. Released structures with vertical gaps from one to several tens of μm have been obtained, possibly using multiple layers of polyimide. Furthermore, patterned freestanding nanowires have been synthesized with diameters from 20 to 60 nm and up to 3 μm in length. These results have been applied to the fabrication of two specific devices: a generic nanomechanical testing lab-on-chip platform and a miniaturized ionization sensor.

  13. Micromachined Microwave Cavity Resonator Filters for 5G: a Feasibility Study

    NARCIS (Netherlands)

    Kemenade, van R.; Smolders, A.B.; Hon, de B.P.

    2015-01-01

    Micromachined microwave cavity filters offer a light-weight, high-Q and highly integrated alternative in the frequency range of 20 GHz–100 GHz as compared to conventional filter types. The filter technology shows potential for use in 5G portable devices and as such, the design of a duplexer

  14. Silicon Photonics II Components and Integration

    CERN Document Server

    Lockwood, David J

    2011-01-01

    This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.

  15. Hybrid integrated single-wavelength laser with silicon micro-ring reflector

    Science.gov (United States)

    Ren, Min; Pu, Jing; Krishnamurthy, Vivek; Xu, Zhengji; Lee, Chee-Wei; Li, Dongdong; Gonzaga, Leonard; Toh, Yeow T.; Tjiptoharsono, Febi; Wang, Qian

    2018-02-01

    A hybrid integrated single-wavelength laser with silicon micro-ring reflector is demonstrated theoretically and experimentally. It consists of a heterogeneously integrated III-V section for optical gain, an adiabatic taper for light coupling, and a silicon micro-ring reflector for both wavelength selection and light reflection. Heterogeneous integration processes for multiple III-V chips bonded to an 8-inch Si wafer have been developed, which is promising for massive production of hybrid lasers on Si. The III-V layer is introduced on top of a 220-nm thick SOI layer through low-temperature wafer-boning technology. The optical coupling efficiency of >85% between III-V and Si waveguide has been achieved. The silicon micro-ring reflector, as the key element of the hybrid laser, is studied, with its maximized reflectivity of 85.6% demonstrated experimentally. The compact single-wavelength laser enables fully monolithic integration on silicon wafer for optical communication and optical sensing application.

  16. Silicon micromachined hollow microneedles for transdermal liquid transport

    NARCIS (Netherlands)

    Gardeniers, Johannes G.E.; Lüttge, Regina; Berenschot, Johan W.; de Boer, Meint J.; Yeshurun, Shuki Y.; Hefetz, Meir; van 't Oever, Ronny; van den Berg, Albert

    2003-01-01

    This paper presents a novel process for the fabrication of out-of-plane hollow microneedles in silicon. The fabrication method consists of a sequence of deep-reactive ion etching (DRIE), anisotropic wet etching and conformal thin film deposition, and allows needle shapes with different,

  17. Silicon micromachined hollow microneedles for transdermal liquid transport

    NARCIS (Netherlands)

    Gardeniers, J.G.E.; Luttge, R.; Berenschot, J.W.; Boer, de M.J.; Yeshurun, S.Y.; Hefetz, M.; Oever, van't R.; Berg, van den A.

    2003-01-01

    This paper presents a novel process for the fabrication of out-of-plane hollow micro needles in silicon. The fabrication method consists of a sequence of deep-reactive ion etching (DRIE), anisotropic wet etching and conformal thin film deposition, and allows needle shapes with different,

  18. System-level integration of active silicon photonic biosensors

    Science.gov (United States)

    Laplatine, L.; Al'Mrayat, O.; Luan, E.; Fang, C.; Rezaiezadeh, S.; Ratner, D. M.; Cheung, K.; Dattner, Y.; Chrostowski, L.

    2017-02-01

    Biosensors based on silicon photonic integrated circuits have attracted a growing interest in recent years. The use of sub-micron silicon waveguides to propagate near-infrared light allows for the drastic reduction of the optical system size, while increasing its complexity and sensitivity. Using silicon as the propagating medium also leverages the fabrication capabilities of CMOS foundries, which offer low-cost mass production. Researchers have deeply investigated photonic sensor devices, such as ring resonators, interferometers and photonic crystals, but the practical integration of silicon photonic biochips as part of a complete system has received less attention. Herein, we present a practical system-level architecture which can be employed to integrate the aforementioned photonic biosensors. We describe a system based on 1 mm2 dies that integrate germanium photodetectors and a single light coupling device. The die are embedded into a 16x16 mm2 epoxy package to enable microfluidic and electrical integration. First, we demonstrate a simple process to mimic Fan-Out Wafer-level-Packaging, which enables low-cost mass production. We then characterize the photodetectors in the photovoltaic mode, which exhibit high sensitivity at low optical power. Finally, we present a new grating coupler concept to relax the lateral alignment tolerance down to +/- 50 μm at 1-dB (80%) power penalty, which should permit non-experts to use the biochips in a"plug-and-play" style. The system-level integration demonstrated in this study paves the way towards the mass production of low-cost and highly sensitive biosensors, and can facilitate their wide adoption for biomedical and agro-environmental applications.

  19. The laser micro-machining system for diamond anvil cell experiments and general precision machining applications at the High Pressure Collaborative Access Team.

    Science.gov (United States)

    Hrubiak, Rostislav; Sinogeikin, Stanislav; Rod, Eric; Shen, Guoyin

    2015-07-01

    We have designed and constructed a new system for micro-machining parts and sample assemblies used for diamond anvil cells and general user operations at the High Pressure Collaborative Access Team, sector 16 of the Advanced Photon Source. The new micro-machining system uses a pulsed laser of 400 ps pulse duration, ablating various materials without thermal melting, thus leaving a clean edge. With optics designed for a tight focus, the system can machine holes any size larger than 3 μm in diameter. Unlike a standard electrical discharge machining drill, the new laser system allows micro-machining of non-conductive materials such as: amorphous boron and silicon carbide gaskets, diamond, oxides, and other materials including organic materials such as polyimide films (i.e., Kapton). An important feature of the new system is the use of gas-tight or gas-flow environmental chambers which allow the laser micro-machining to be done in a controlled (e.g., inert gas) atmosphere to prevent oxidation and other chemical reactions in air sensitive materials. The gas-tight workpiece enclosure is also useful for machining materials with known health risks (e.g., beryllium). Specialized control software with a graphical interface enables micro-machining of custom 2D and 3D shapes. The laser-machining system was designed in a Class 1 laser enclosure, i.e., it includes laser safety interlocks and computer controls and allows for routine operation. Though initially designed mainly for machining of the diamond anvil cell gaskets, the laser-machining system has since found many other micro-machining applications, several of which are presented here.

  20. The laser micro-machining system for diamond anvil cell experiments and general precision machining applications at the High Pressure Collaborative Access Team

    International Nuclear Information System (INIS)

    Hrubiak, Rostislav; Sinogeikin, Stanislav; Rod, Eric; Shen, Guoyin

    2015-01-01

    We have designed and constructed a new system for micro-machining parts and sample assemblies used for diamond anvil cells and general user operations at the High Pressure Collaborative Access Team, sector 16 of the Advanced Photon Source. The new micro-machining system uses a pulsed laser of 400 ps pulse duration, ablating various materials without thermal melting, thus leaving a clean edge. With optics designed for a tight focus, the system can machine holes any size larger than 3 μm in diameter. Unlike a standard electrical discharge machining drill, the new laser system allows micro-machining of non-conductive materials such as: amorphous boron and silicon carbide gaskets, diamond, oxides, and other materials including organic materials such as polyimide films (i.e., Kapton). An important feature of the new system is the use of gas-tight or gas-flow environmental chambers which allow the laser micro-machining to be done in a controlled (e.g., inert gas) atmosphere to prevent oxidation and other chemical reactions in air sensitive materials. The gas-tight workpiece enclosure is also useful for machining materials with known health risks (e.g., beryllium). Specialized control software with a graphical interface enables micro-machining of custom 2D and 3D shapes. The laser-machining system was designed in a Class 1 laser enclosure, i.e., it includes laser safety interlocks and computer controls and allows for routine operation. Though initially designed mainly for machining of the diamond anvil cell gaskets, the laser-machining system has since found many other micro-machining applications, several of which are presented here

  1. Modeling and Experimental Study on Characterization of Micromachined Thermal Gas Inertial Sensors

    Directory of Open Access Journals (Sweden)

    Yan Su

    2010-09-01

    Full Text Available Micromachined thermal gas inertial sensors based on heat convection are novel devices that compared with conventional micromachined inertial sensors offer the advantages of simple structures, easy fabrication, high shock resistance and good reliability by virtue of using a gaseous medium instead of a mechanical proof mass as key moving and sensing elements. This paper presents an analytical modeling for a micromachined thermal gas gyroscope integrated with signal conditioning. A simplified spring-damping model is utilized to characterize the behavior of the sensor. The model relies on the use of the fluid mechanics and heat transfer fundamentals and is validated using experimental data obtained from a test-device and simulation. Furthermore, the nonideal issues of the sensor are addressed from both the theoretical and experimental points of view. The nonlinear behavior demonstrated in experimental measurements is analyzed based on the model. It is concluded that the sources of nonlinearity are mainly attributable to the variable stiffness of the sensor system and the structural asymmetry due to nonideal fabrication.

  2. Method of drying passivated micromachines by dewetting from a liquid-based process

    Science.gov (United States)

    Houston, Michael R.; Howe, Roger T.; Maboudian, Roya; Srinivasan, Uthara

    2000-01-01

    A method of fabricating a micromachine includes the step of constructing a low surface energy film on the micromachine. The micromachine is then rinsed with a rinse liquid that has a high surface energy, relative to the low surface energy film, to produce a contact angle of greater than 90.degree. between the low surface energy film and the rinse liquid. This relatively large contact angle causes any rinse liquid on the micromachine to be displaced from the micromachine when the micromachine is removed from the rinse liquid. In other words, the micromachine is dried by dewetting from a liquid-based process. Thus, a separate evaporative drying step is not required, as the micromachine is removed from the liquid-based process in a dry state. The relatively large contact angle also operates to prevent attractive capillary forces between micromachine components, thereby preventing contact and adhesion between adjacent microstructure surfaces. The low surface energy film may be constructed with a fluorinated self-assembled monolayer film. The processing of the invention avoids the use of environmentally harmful, health-hazardous chemicals.

  3. Micromachining process – current situation and challenges

    Directory of Open Access Journals (Sweden)

    Lalakiya Meet Rajeshkumar

    2015-01-01

    Full Text Available The rapid progress in the scientific innovations and the hunt for the renewable energy increases the urge for producing the bio electronic products, solar cells, bio batteries, nano robots, MEMS, blood less surgical tools which can be possible with the aid of the micromachining. This article helps us to understand the evolution and the challenges faced by the micromachining process. Micro machining is an enabling technology that facilitates component miniaturization and improved performance characteristics. Growing demand for less weight, high accuracy, high precision, meagre lead time, reduced batch size, less human interference are the key drivers for the micromachining than the conventional machining process.

  4. Excimer laser micromachining for 3D microstructure

    NARCIS (Netherlands)

    Choi, Kyung Hyun; Meijer, J.; Masuzawa, Takahisa; Kim, Dae-Hyun

    2004-01-01

    A new 3D micromachining method, called Hole Area Modulation (HAM), has been introduced to enhance the current micromachining technology. In this method, information on the machining depth is converted to the sizes of holes on the mask. The machining is carried out with a simple 2D movement of the

  5. Integration of mask and silicon metrology in DFM

    Science.gov (United States)

    Matsuoka, Ryoichi; Mito, Hiroaki; Sugiyama, Akiyuki; Toyoda, Yasutaka

    2009-03-01

    We have developed a highly integrated method of mask and silicon metrology. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. We have inspected the high accuracy, stability and reproducibility in the experiments of integration. The accuracy is comparable with that of the mask and silicon CD-SEM metrology. In this report, we introduce the experimental results and the application. As shrinkage of design rule for semiconductor device advances, OPC (Optical Proximity Correction) goes aggressively dense in RET (Resolution Enhancement Technology). However, from the view point of DFM (Design for Manufacturability), the cost of data process for advanced MDP (Mask Data Preparation) and mask producing is a problem. Such trade-off between RET and mask producing is a big issue in semiconductor market especially in mask business. Seeing silicon device production process, information sharing is not completely organized between design section and production section. Design data created with OPC and MDP should be linked to process control on production. But design data and process control data are optimized independently. Thus, we provided a solution of DFM: advanced integration of mask metrology and silicon metrology. The system we propose here is composed of followings. 1) Design based recipe creation: Specify patterns on the design data for metrology. This step is fully automated since they are interfaced with hot spot coordinate information detected by various verification methods. 2) Design based image acquisition: Acquire the images of mask and silicon automatically by a recipe based on the pattern design of CD-SEM.It is a robust automated step because a wide range of design data is used for the image acquisition. 3) Contour profiling and GDS data generation: An image profiling process is applied to the acquired image based

  6. Heterogeneously integrated silicon photonics for the mid-infrared and spectroscopic sensing.

    Science.gov (United States)

    Chen, Yu; Lin, Hongtao; Hu, Juejun; Li, Mo

    2014-07-22

    Besides being the foundational material for microelectronics, crystalline silicon has long been used for the production of infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of photonic devices for on-chip optical interconnect and signal processing. For optics, silicon has significant advantages: it offers a very high refractive index and is highly transparent in the spectral range from 1.2 to 8 μm. To fully exploit silicon’s superior performance in a remarkably broad range and to enable new optoelectronic functionalities, here we describe a general method to integrate silicon photonic devices on arbitrary foreign substrates. In particular, we apply the technique to integrate silicon microring resonators on mid-infrared compatible substrates for operation in the mid-infrared. These high-performance mid-infrared optical resonators are utilized to demonstrate, for the first time, on-chip cavity-enhanced mid-infrared spectroscopic analysis of organic chemicals with a limit of detection of less than 0.1 ng.

  7. Micromachined Precision Inertial Instruments

    National Research Council Canada - National Science Library

    Najafi, Khalil

    2003-01-01

    This program focuses on developing inertial-grade micromachined accelerometers and gyroscopes and their associated electronics and packaging for use in a variety of military and commercial applications...

  8. Silicon Photonic Integrated Circuit Mode Multiplexer

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Xu, Jing

    2013-01-01

    We propose and demonstrate a novel silicon photonic integrated circuit enabling multiplexing of orthogonal modes in a few-mode fiber (FMF). By selectively launching light to four vertical grating couplers, all six orthogonal spatial and polarization modes supported by the FMF are successfully...

  9. Study of surfactant-added TMAH for applications in DRIE and wet etching-based micromachining

    Science.gov (United States)

    Tang, B.; Shikida, M.; Sato, K.; Pal, P.; Amakawa, H.; Hida, H.; Fukuzawa, K.

    2010-06-01

    In this paper, etching anisotropy is evaluated for a number of different crystallographic orientations of silicon in a 0.1 vol% Triton-X-100 added 25 wt% tetramethylammonium hydroxide (TMAH) solution using a silicon hemisphere. The research is primarily aimed at developing advanced applications of wet etching in microelectromechanical systems (MEMS). The etching process is carried out at different temperatures in the range of 61-81 °C. The etching results of silicon hemisphere and different shapes of three-dimensional structures in {1 0 0}- and {1 1 0}-Si surfaces are analyzed. Significantly important anisotropy, different from a traditional etchant (e.g. pure KOH and TMAH), is investigated to extend the applications of the wet etching process in silicon bulk micromachining. The similar etching behavior of exact and vicinal {1 1 0} and {1 1 1} planes in TMAH + Triton is utilized selectively to remove the scalloping from deep reactive-ion etching (DRIE) etched profiles. The direct application of the present research is demonstrated by fabricating a cylindrical lens with highly smooth etched surface finish. The smoothness of a micro-lens at different locations is measured qualitatively by a scanning electron microscope and quantitatively by an atomic force microscope. The present paper provides a simple and effective fabrication method of the silicon micro-lens for optical MEMS applications.

  10. Demonstration of superconducting micromachined cavities

    Energy Technology Data Exchange (ETDEWEB)

    Brecht, T., E-mail: teresa.brecht@yale.edu; Reagor, M.; Chu, Y.; Pfaff, W.; Wang, C.; Frunzio, L.; Devoret, M. H.; Schoelkopf, R. J. [Department of Applied Physics, Yale University, New Haven, Connecticut 06511 (United States)

    2015-11-09

    Superconducting enclosures will be key components of scalable quantum computing devices based on circuit quantum electrodynamics. Within a densely integrated device, they can protect qubits from noise and serve as quantum memory units. Whether constructed by machining bulk pieces of metal or microfabricating wafers, 3D enclosures are typically assembled from two or more parts. The resulting seams potentially dissipate crossing currents and limit performance. In this letter, we present measured quality factors of superconducting cavity resonators of several materials, dimensions, and seam locations. We observe that superconducting indium can be a low-loss RF conductor and form low-loss seams. Leveraging this, we create a superconducting micromachined resonator with indium that has a quality factor of two million, despite a greatly reduced mode volume. Inter-layer coupling to this type of resonator is achieved by an aperture located under a planar transmission line. The described techniques demonstrate a proof-of-principle for multilayer microwave integrated quantum circuits for scalable quantum computing.

  11. Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

    Science.gov (United States)

    Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

    2017-12-13

    Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

  12. Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.

    Science.gov (United States)

    Chang, Lin; Pfeiffer, Martin H P; Volet, Nicolas; Zervas, Michael; Peters, Jon D; Manganelli, Costanza L; Stanton, Eric J; Li, Yifei; Kippenberg, Tobias J; Bowers, John E

    2017-02-15

    An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

  13. A Micromachined Infrared Senor for an Infrared Focal Plane Array

    Directory of Open Access Journals (Sweden)

    Seong M. Cho

    2008-04-01

    Full Text Available A micromachined infrared sensor for an infrared focal plane array has been designed and fabricated. Amorphous silicon was used as a sensing material, and silicon nitride was used as a membrane material. To get a good absorption in infrared range, the sensor structure was designed as a l/4 cavity structure. A Ni-Cr film was selected as an electrode material and mixed etching scheme was applied in the patterning process of the Ni-Cr electrode. All the processes were made in 0.5 μm iMEMS fabricated in the Electronics and Telecommunication Research Institute (ETRI. The processed MEMS sensor had a small membrane deflection less than 0.15 μm. This small deflection can be attributed to the rigorous balancing of the stresses of individual layers. The efficiency of infrared absorption was more than 75% in the wavelength range of 8 ~ 14 μm. The processed infrared sensor showed high responsivity of ~230 kV/W at 1.0V bias and 2 Hz operation condition. The time constant of the sensor was 8.6 msec, which means that the sensor is suitable to be operated in 30 Hz frame rate.

  14. Silicon integrated circuits advances in materials and device research

    CERN Document Server

    Kahng, Dawon

    1981-01-01

    Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, an

  15. Porous silicon technology for integrated microsystems

    Science.gov (United States)

    Wallner, Jin Zheng

    With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

  16. Non-traditional micromachining processes fundamentals and applications

    CERN Document Server

    Bhattacharyya, B; Davim, J

    2017-01-01

    This book presents a complete coverage of micromachining processes from their basic material removal phenomena to past and recent research carried by a number of researchers worldwide. Chapters on effective utilization of material resources, improved efficiency, reliability, durability, and cost effectiveness of the products are presented. This book provides the reader with new and recent developments in the field of micromachining and microfabrication of engineering materials.

  17. Manufacture of Radio Frequency Micromachined Switches with Annealing

    Directory of Open Access Journals (Sweden)

    Cheng-Yang Lin

    2014-01-01

    Full Text Available The fabrication and characterization of a radio frequency (RF micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

  18. Manufacture of radio frequency micromachined switches with annealing.

    Science.gov (United States)

    Lin, Cheng-Yang; Dai, Ching-Liang

    2014-01-17

    The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

  19. Resist materials for proton micromachining

    International Nuclear Information System (INIS)

    Kan, J.A. van; Sanchez, J.L.; Xu, B.; Osipowicz, T.; Watt, F.

    1999-01-01

    The production of high aspect ratio microstructures is a potential growth area. The combination of deep X-ray lithography with electroforming and micromolding (i.e. LIGA) is one of the main techniques used to produce 3D microstructures. The new technique of proton micromachining employs focused MeV protons in a direct write process which is complementary to LIGA, e.g. micromachining with 2 MeV protons results in microstructures with a height of 63 μm and lateral sub-micrometer resolution in PMMA resist. The aim of this paper is to investigate the capabilities of proton micromachining as a lithographic technique. This involves the study of different types of resists. The dose distribution of high molecular weight PMMA is compared with three other types of resist: First the positive photo resist AZ P4620 will be discussed and then PMGI SF 23, which can be used as a deep UV, e-beam or X-ray resist. Finally SU-8, a new deep UV negative type of chemically amplified resist will be discussed. All these polymers are applied using the spin coating technique at thicknesses of between 1 and 36 μm

  20. Integration of lateral porous silicon membranes into planar microfluidics.

    Science.gov (United States)

    Leïchlé, Thierry; Bourrier, David

    2015-02-07

    In this work, we present a novel fabrication process that enables the monolithic integration of lateral porous silicon membranes into single-layer planar microchannels. This fabrication technique relies on the patterning of local electrodes to guide pore formation horizontally within the membrane and on the use of silicon-on-insulator substrates to spatially localize porous silicon within the channel depth. The feasibility of our approach is studied by current flow analysis using the finite element method and supported by creating 10 μm long mesoporous membranes within 20 μm deep microchannels. The fabricated membranes are demonstrated to be potentially useful for dead-end microfiltration by adequately retaining 300 nm diameter beads while macromolecules such as single-stranded DNA and immunoglobulin G permeate the membrane. The experimentally determined fluidic resistance is in accordance with the theoretical value expected from the estimated pore size and porosity. The work presented here is expected to greatly simplify the integration of membranes capable of size exclusion based separation into fluidic devices and opens doors to the use of porous silicon in planar lab on a chip devices.

  1. Fiscal 1997 report on technological results. R and D on micromachine technology; 1997 nendo micromachine gijutsu no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Researches on basic element technology of micromachines are conducted that operate autonomously in a narrow small part in a complicated apparatus or in vivo. The areas of activity are 1. research on micromachine systems and 2. comprehensive investigation and research. In 1, (1) a micro catheter and (2) a micro tactile sensor catheter were studied while, in 2, basic technology and technological problems, particularly those problems concerning sophistication in the medical field were examined and studied. Further, in (1), with the purpose of developing a micro laser catheter for diagnosis/treatment, researches were implemented on the technology of integrating micro laser and an optical fiber which were components of the catheter and on the fabrication of the fine diameter of a micro catheter as well as on the characteristical improvement of the base body on which minute elements were mounted. In (2), characteristical improvement and sophistication were carried out for a high sensitivity contact pressure sensor and a diagnostic tactile sensor, which are mounted on a catheter having a positive bulge control mechanism for insertion into body cavity, with a sensor probe manufactured experimentally. (NEDO)

  2. Structure optimization and simulation analysis of the quartz micromachined gyroscope

    Directory of Open Access Journals (Sweden)

    Xuezhong Wu

    2014-02-01

    Full Text Available Structure optimization and simulation analysis of the quartz micromachined gyroscope are reported in this paper. The relationships between the structure parameters and the frequencies of work mode were analysed by finite element analysis. The structure parameters of the quartz micromachined gyroscope were optimized to reduce the difference between the frequencies of the drive mode and the sense mode. The simulation results were proved by testing the prototype gyroscope, which was fabricated by micro-electromechanical systems (MEMS technology. Therefore, the frequencies of the drive mode and the sense mode can match each other by the structure optimization and simulation analysis of the quartz micromachined gyroscope, which is helpful in the design of the high sensitivity quartz micromachined gyroscope.

  3. Omega-X micromachining system

    International Nuclear Information System (INIS)

    Miller, D.M.

    1978-01-01

    A micromachining tool system with X- and omega-axes is used to machine spherical, aspherical, and irregular surfaces with a maximum contour error of 100 nonometers (nm) and surface waviness of no more than 0.8 nm RMS. The omega axis, named for the angular measurement of the rotation of an eccentric mechanism supporting one end of a tool bar, enables the pulse increments of the tool toward the workpiece to be as little as 0 to 4.4 nm. A dedicated computer coordinates motion in the two axes to produce the workpiece contour. Inertia is reduced by reducing the mass pulsed toward the workpiece to about one-fifth of its former value. The tool system includes calibration instruments to calibrate the micromachining tool system. Backlash is reduced and flexing decreased by using a rotary table and servomotor to pulse the tool in the omega-axis instead of a ball screw mechanism. A thermally-stabilized spindle roates the workpiece and is driven by a motor not mounted on the micromachining tool base through a torque-smoothing pulley and vibrationless rotary coupling. Abbe offset errors are almost eliminated by tool setting and calibration at spindle center height. Tool contour and workpiece contour are gaged on the machine; this enables the source of machining errors to be determined more readily, because the workpiece is gaged before its shape can be changed by removal from the machine

  4. Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

    Science.gov (United States)

    Rao, A. V. Narasimha; Swarnalatha, V.; Pal, P.

    2017-12-01

    Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved anisotropy between Si{111} and Si{110} planes. In the manufacturing company, high etch rate is demanded to increase the productivity that eventually reduces the cost of end product. In order to modify the etching characteristics of KOH for the micromachining of Si{110}, we have investigated the effect of hydroxylamine (NH2OH) in 20 wt% KOH solution. The concentration of NH2OH is varied from 0 to 20% and the etching is carried out at 75 °C. The etching characteristics which are studied in this work includes the etch rates of Si{110} and silicon dioxide, etched surface morphology, and undercutting at convex corners. The etch rate of Si{110} in 20 wt% KOH + 15% NH2OH solution is measured to be four times more than that of pure 20 wt% KOH. Moreover, the addition of NH2OH increases the undercutting at convex corners and enhances the etch selectivity between Si and SiO2.

  5. Stiction in surface micromachining

    NARCIS (Netherlands)

    Tas, Niels Roelof; Sonnenberg, A.H.; Jansen, Henricus V.; Legtenberg, R.; Legtenberg, Rob; Elwenspoek, Michael Curt

    1996-01-01

    Due to the smoothness of the surfaces in surface micromachining, large adhesion forces between fabricated structures and the substrate are encountered. Four major adhesion mechanisms have been analysed: capillary forces, hydrogen bridging, electrostatic forces and van der Waals forces. Once contact

  6. High-Tc superconducting antenna-coupled microbolometer on silicon

    Science.gov (United States)

    Rice, Joseph P.; Grossman, Erich N.; Borcherdt, L. J.; Rudman, D. A.

    1994-05-01

    A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-Tc superconductor YBa2Cu3O7 (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 X 10-6 W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 microsecond(s) , a responsivity of the 1000 V/W range, and a noise-equivalent power in the 10-12 W/Hz1/2 range at 1000 Hz.

  7. Capacitive micromachined ultrasonic transducers for medical imaging and therapy

    International Nuclear Information System (INIS)

    Khuri-Yakub, Butrus T; Oralkan, Ömer

    2011-01-01

    Capacitive micromachined ultrasonic transducers (CMUTs) have been subject to extensive research for the last two decades. Although they were initially developed for air-coupled applications, today their main application space is medical imaging and therapy. This paper first presents a brief description of CMUTs, their basic structure and operating principles. Our progression of developing several generations of fabrication processes is discussed with an emphasis on the advantages and disadvantages of each process. Monolithic and hybrid approaches for integrating CMUTs with supporting integrated circuits are surveyed. Several prototype transducer arrays with integrated front-end electronic circuits we developed and their use for 2D and 3D, anatomical and functional imaging, and ablative therapies are described. The presented results prove the CMUT as a micro-electro-mechanical systems technology for many medical diagnostic and therapeutic applications

  8. Capacitive micromachined ultrasonic transducers for medical imaging and therapy.

    Science.gov (United States)

    Khuri-Yakub, Butrus T; Oralkan, Omer

    2011-05-01

    Capacitive micromachined ultrasonic transducers (CMUTs) have been subject to extensive research for the last two decades. Although they were initially developed for air-coupled applications, today their main application space is medical imaging and therapy. This paper first presents a brief description of CMUTs, their basic structure, and operating principles. Our progression of developing several generations of fabrication processes is discussed with an emphasis on the advantages and disadvantages of each process. Monolithic and hybrid approaches for integrating CMUTs with supporting integrated circuits are surveyed. Several prototype transducer arrays with integrated frontend electronic circuits we developed and their use for 2-D and 3-D, anatomical and functional imaging, and ablative therapies are described. The presented results prove the CMUT as a MEMS technology for many medical diagnostic and therapeutic applications.

  9. Cryogenically assisted abrasive jet micromachining of polymers

    International Nuclear Information System (INIS)

    Getu, H; Papini, M; Spelt, J K

    2008-01-01

    The abrasive jet micromachining (AJM) of elastomers and polymers such as polydimethylsiloxane (PDMS), acrylonitrile butadiene styrene (ABS) and polytetrafluoroethylene (PTFE) for use in micro-fluidic devices was found to be very slow or impossible at room temperature. To enhance the material removal rate in such materials, a stream of liquid nitrogen (LN 2 ) was injected into the abrasive jet, cooling the target to cryogenic temperatures. Erosion rate measurements on the three polymeric materials (PDMS, ABS and PTFE) with and without the use of LN 2 were compared along with the profiles of micromachined channels and holes. It was found that the use of LN 2 cooling caused brittle erosion in PDMS, allowing it to be micromachined successfully. An erosion rate increase was also observed in PTFE and ABS at high and intermediate impact angles. The use of LN 2 also was found to reduce particle embedding

  10. Integration of the End Cap TEC+ of the CMS Silicon Strip Tracker

    CERN Document Server

    Adler, Volker; Ageron, Michel; Agram, Jean-Laurent; Atz, Bernd; Barvich, Tobias; Baulieu, Guillaume; Beaumont, Willem; Beissel, Franz; Bergauer, Thomas; Berst, Jean-Daniel; Blüm, Peter; Bock, E; Bogelsbacher, F; de Boer, Wim; Bonnet, Jean-Luc; Bonnevaux, Alain; Boudoul, Gaelle; Bouhali, Othmane; Braunschweig, Wolfgang; Bremer, R; Brom, Jean-Marie; Butz, Erik; Chabanat, Eric; Chabert, Eric Christian; Clerbaux, Barbara; Contardo, Didier; De Callatay, Bernard; Dehm, Philip; Delaere, Christophe; Della Negra, Rodolphe; Dewulf, Jean-Paul; D'Hondt, Jorgen; Didierjean, Francois; Dierlamm, Alexander; Dirkes, Guido; Dragicevic, Marko; Drouhin, Frédéric; Ernenwein, Jean-Pierre; Esser, Hans; Estre, Nicolas; Fahrer, Manuel; Feld, Lutz; Fernández, J; Florins, Benoit; Flossdorf, Alexander; Flucke, Gero; Flügge, Günter; Fontaine, Jean-Charles; Freudenreich, Klaus; Frey, Martin; Friedl, Markus; Furgeri, Alexander; Giraud, Noël; Goerlach, Ulrich; Goorens, Robert; Graehling, Philippe; Grégoire, Ghislain; Gregoriev, E; Gross, Laurent; Hansel, S; Haroutunian, Roger; Hartmann, Frank; Heier, Stefan; Hermanns, Thomas; Heydhausen, Dirk; Heyninck, Jan; Hosselet, J; Hrubec, Josef; Jahn, Dieter; Juillot, Pierre; Kaminski, Jochen; Karpinski, Waclaw; Kaussen, Gordon; Keutgen, Thomas; Klanner, Robert; Klein, Katja; König, Stefan; Kosbow, M; Krammer, Manfred; Ledermann, Bernhard; Lemaître, Vincent; De Lentdecker, Gilles; Linn, Alexander; Lounis, Abdenour; Lübelsmeyer, Klaus; Lumb, Nicholas; Maazouzi, Chaker; Mahmoud, Tariq; Michotte, Daniel; Militaru, Otilia; Mirabito, Laurent; Müller, Thomas; Neukermans, Lionel; Ollivetto, C; Olzem, Jan; Ostapchuk, Andrey; Pandoulas, Demetrios; Pein, Uwe; Pernicka, Manfred; Perriès, Stephane; Piaseki, C; Pierschel, Gerhard; Piotrzkowski, Krzysztof; Poettgens, Michael; Pooth, Oliver; Rouby, Xavier; Sabellek, Andreas; Schael, Stefan; Schirm, Norbert; Schleper, Peter; Schmitz, Stefan Antonius; Schultz von Dratzig, Arndt; Siedling, Rolf; Simonis, Hans-Jürgen; Stahl, Achim; Steck, Pia; Steinbruck, G; Stoye, Markus; Strub, Roger; Tavernier, Stefaan; Teyssier, Daniel; Theel, Andreas; Trocmé, Benjamin; Udo, Fred; Van der Donckt, M; Van der Velde, C; Van Hove, Pierre; Vanlaer, Pascal; Van Lancker, Luc; Van Staa, Rolf; Vanzetto, Sylvain; Weber, Markus; Weiler, Thomas; Weseler, Siegfried; Wickens, John; Wittmer, Bruno; Wlochal, Michael; De Wolf, Eddi A; Zhukov, Valery; Zoeller, Marc Henning

    2009-01-01

    The silicon strip tracker of the CMS experiment has been completed and inserted into the CMS detector in late 2007. The largest sub-system of the tracker is its end cap system, comprising two large end caps (TEC) each containing 3200 silicon strip modules. To ease construction, the end caps feature a modular design: groups of about 20 silicon modules are placed on sub-assemblies called petals and these self-contained elements are then mounted into the TEC support structures. Each end cap consists of 144 petals, and the insertion of these petals into the end cap structure is referred to as TEC integration. The two end caps were integrated independently in Aachen (TEC+) and at CERN (TEC--). This note deals with the integration of TEC+, describing procedures for end cap integration and for quality control during testing of integrated sections of the end cap and presenting results from the testing.

  11. On-chip micromachined dipole antenna with parasitic radiator for mm-wave wireless systems

    KAUST Repository

    Sallam, Mai O.; Serry, Mohamed; Shamim, Atif; Sedky, Sherif; Soliman, Ezzeldin A.

    2016-01-01

    In this paper, we present a micromachined dipole antenna with parasitic radiator. The antenna is designed for operation at 60 GHz. It consists of two Ig/2 dipole radiators fed by coplanar strips waveguide. Two slightly shorter dipoles are placed in proximity to the main radiators. They act as parasitic dipole arms which increase the bandwidth of the antenna. Two versions of the same antenna topology are presented in this paper in which one uses a high resistivity silicon substrate while the other uses a low resistivity one. The proposed antenna was optimized using HFSS and the final design was simulated using both HFSS and CST for verifying the obtained results. Both simulators are in good agreement. They show that the antenna has very good radiation characteristics where its directivity is around 7.5 dBi. The addition of the parasitic arms increased the bandwidth of the antenna from 1.3 GHz (3.62 GHz) to 4.3 GHz (7.44 GHz) when designed on high (low) resistivity silicon substrate.

  12. On-chip micromachined dipole antenna with parasitic radiator for mm-wave wireless systems

    KAUST Repository

    Sallam, Mai O.

    2016-12-19

    In this paper, we present a micromachined dipole antenna with parasitic radiator. The antenna is designed for operation at 60 GHz. It consists of two Ig/2 dipole radiators fed by coplanar strips waveguide. Two slightly shorter dipoles are placed in proximity to the main radiators. They act as parasitic dipole arms which increase the bandwidth of the antenna. Two versions of the same antenna topology are presented in this paper in which one uses a high resistivity silicon substrate while the other uses a low resistivity one. The proposed antenna was optimized using HFSS and the final design was simulated using both HFSS and CST for verifying the obtained results. Both simulators are in good agreement. They show that the antenna has very good radiation characteristics where its directivity is around 7.5 dBi. The addition of the parasitic arms increased the bandwidth of the antenna from 1.3 GHz (3.62 GHz) to 4.3 GHz (7.44 GHz) when designed on high (low) resistivity silicon substrate.

  13. Novel in situ mechanical testers to enable integrated metal surface micro-machines.

    Energy Technology Data Exchange (ETDEWEB)

    Follstaedt, David Martin; de Boer, Maarten Pieter; Kotula, Paul Gabriel; Hearne, Sean Joseph; Foiles, Stephen Martin; Buchheit, Thomas Edward; Dyck, Christopher William

    2005-10-01

    The ability to integrate metal and semiconductor micro-systems to perform highly complex functions, such as RF-MEMS, will depend on developing freestanding metal structures that offer improved conductivity, reflectivity, and mechanical properties. Three issues have prevented the proliferation of these systems: (1) warpage of active components due to through-thickness stress gradients, (2) limited component lifetimes due to fatigue, and (3) low yield strength. To address these issues, we focus on developing and implementing techniques to enable the direct study of the stress and microstructural evolution during electrodeposition and mechanical loading. The study of stress during electrodeposition of metal thin films is being accomplished by integrating a multi-beam optical stress sensor into an electrodeposition chamber. By coupling the in-situ stress information with ex-situ microstructural analysis, a scientific understanding of the sources of stress during electrodeposition will be obtained. These results are providing a foundation upon which to develop a stress-gradient-free thin film directly applicable to the production of freestanding metal structures. The issues of fatigue and yield strength are being addressed by developing novel surface micromachined tensile and bend testers, by interferometry, and by TEM analysis. The MEMS tensile tester has a ''Bosch'' etched hole to allow for direct viewing of the microstructure in a TEM before, during, and after loading. This approach allows for the quantitative measurements of stress-strain relations while imaging dislocation motion, and determination of fracture nucleation in samples with well-known fatigue/strain histories. This technique facilitates the determination of the limits for classical deformation mechanisms and helps to formulate a new understanding of the mechanical response as the grain sizes are refined to a nanometer scale. Together, these studies will result in a science

  14. Micromachining with copper lasers

    Science.gov (United States)

    Knowles, Martyn R. H.; Bell, Andy; Foster-Turner, Gideon; Rutterford, Graham; Chudzicki, J.; Kearsley, Andrew J.

    1997-04-01

    In recent years the copper laser has undergone extensive development and has emerged as a leading and unique laser for micromachining. The copper laser is a high average power (10 - 250 W), high pulse repetition rate (2 - 32 kHz), visible laser (511 nm and 578 nm) that produces high peak power (typically 200 kW), short pulses (30 ns) and very good beam quality (diffraction limited). This unique set of laser parameters results in exceptional micro-machining in a wide variety of materials. Typical examples of the capabilities of the copper laser include the drilling of small holes (10 - 200 micrometer diameter) in materials as diverse as steel, ceramic, diamond and polyimide with micron precision and low taper (less than 1 degree) cutting and profiling of diamond. Application of the copper laser covers the electronic, aerospace, automotive, nuclear, medical and precision engineering industries.

  15. Fiscal 1996 report on technological results. R and D on micromachine technology; 1996 nendo micromachine gijutsu no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Researches on basic element technology of micromachines are conducted that operate autonomously in a narrow small part in a complicated apparatus or in vivo. The areas of activity are (1) research on micromachine systems, (2) a subminiature liquid synthesizing system, and (3) comprehensive investigation and research. In (1), the researches were carried out on the miniaturization and functional combination of a micro laser catheter and a micro tactile sensor catheter, which are the primary components of a coeliac diagnostic and therapeutic system, a 'micro catheter for cerebral blood vessel/treatment', as a micromachine system in the medical field. In (2), R and D was conducted on a system element technology assuming it contributed to a subminiature liquid synthesizing system capable of preparing various liquids including pharmaceuticals accurately with a trace amount. In (3), examination was made on the application area of a micromachine system with priority given to a medical field and also on technological subjects to be tapped, as well as on the contents of (2), with a device installed for evaluating the operating characteristic of a distribution type fluid actuator as needed for the development. (NEDO)

  16. A 40-GBd QPSK/16-QAM integrated silicon coherent receiver

    NARCIS (Netherlands)

    Verbist, J.; Zhang, J.; Moeneclaey, B.; Soenen, W.; Van Weerdenburg, J.J.A.; Van Uden, R.; Okonkwo, C.M.; Bauwelinck, J.; Roelkens, G.; Yin, X.

    2016-01-01

    Through co-design of a dual SiGe transimpedance amplifier and an integrated silicon photonic circuit, we realized for the first time an ultra-compact and low-power silicon single-polarization coherent receiver operating at 40 GBd. A bit-error rate of <3.8× 10-3 was obtained for an optical

  17. Hybrid integration of carbon nanotubes in silicon photonic structures

    Science.gov (United States)

    Durán-Valdeiglesias, E.; Zhang, W.; Alonso-Ramos, C.; Le Roux, X.; Serna, S.; Hoang, H. C.; Marris-Morini, D.; Cassan, E.; Intonti, F.; Sarti, F.; Caselli, N.; La China, F.; Gurioli, M.; Balestrieri, M.; Vivien, L.; Filoramo, A.

    2017-02-01

    Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photo- and electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform. .

  18. PECVD silicon carbide surface micromachining technology and selected MEMS applications

    NARCIS (Netherlands)

    Rajaraman, V.; Pakula, L.S.; Yang, H.; French, P.J.; Sarro, P.M.

    2011-01-01

    Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with

  19. Experience on 3D silicon sensors for ATLAS IBL

    International Nuclear Information System (INIS)

    Darbo, G.

    2015-01-01

    3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high energy physics experiments. This type of sensors has been developed for the Insertable B-Layer (IBL), an additional pixel layer that has been installed in ATLAS during the present shutdown of the LHC collider at CERN. It is presented here the experience in designing, testing and qualifying sensors and detector modules that have been used to equip part of the IBL. Based on the gained experience with 3D silicon sensors for the ATLAS IBL, we discuss possible new developments for the upgrade of ATLAS and CMS at the high-luminosity LHC (HL-LHC)

  20. Femtosecond laser micromachining of polylactic acid/graphene composites for designing interdigitated microelectrodes for sensor applications

    Science.gov (United States)

    Paula, Kelly T.; Gaál, Gabriel; Almeida, G. F. B.; Andrade, M. B.; Facure, Murilo H. M.; Correa, Daniel S.; Riul, Antonio; Rodrigues, Varlei; Mendonça, Cleber R.

    2018-05-01

    There is an increasing interest in the last years towards electronic applications of graphene-based materials and devices fabricated from patterning techniques, with the ultimate goal of high performance and temporal resolution. Laser micromachining using femtosecond pulses is an attractive methodology to integrate graphene-based materials into functional devices as it allows changes to the focal volume with a submicrometer spatial resolution due to the efficient nonlinear nature of the absorption, yielding rapid prototyping for innovative applications. We present here the patterning of PLA-graphene films spin-coated on a glass substrate using a fs-laser at moderate pulse energies to fabricate interdigitated electrodes having a minimum spatial resolution of 5 μm. Raman spectroscopy of the PLA-graphene films indicated the presence of multilayered graphene fibers. Subsequently, the PLA-graphene films were micromachined using a femtosecond laser oscillator delivering 50-fs pulses and 800 nm, where the pulse energy and scanning speed was varied in order to determine the optimum irradiation parameters (16 nJ and 100 μm/s) to the fabrication of microstructures. The micromachined patterns were characterized by optical microscopy and submitted to electrical measurements in liquid samples, clearly distinguishing all tastes tested. Our results confirm the femtosecond laser micromachining technique as an interesting approach to efficiently pattern PLA-graphene filaments with high precision and minimal mechanical defects, allowing the easy fabrication of interdigitated structures and an alternative method to those produced by conventional photolithography.

  1. Real-time control of ultrafast laser micromachining by laser-induced breakdown spectroscopy

    International Nuclear Information System (INIS)

    Tong Tao; Li Jinggao; Longtin, Jon P.

    2004-01-01

    Ultrafast laser micromachining provides many advantages for precision micromachining. One challenging problem, however, particularly for multilayer and heterogeneous materials, is how to prevent a given material from being ablated, as ultrafast laser micromachining is generally material insensitive. We present a real-time feedback control system for an ultrafast laser micromachining system based on laser-induced breakdown spectroscopy (LIBS). The characteristics of ultrafast LIBS are reviewed and discussed so as to demonstrate the feasibility of the technique. Comparison methods to identify the material emission patterns are developed, and several of the resulting algorithms were implemented into a real-time computer control system. LIBS-controlled micromachining is demonstrated for the fabrication of microheater structures on thermal sprayed materials. Compared with a strictly passive machining process without any such feedback control, the LIBS-based system provides several advantages including less damage to the substrate layer, reduced machining time, and more-uniform machining features

  2. High-contrast gratings for long-wavelength laser integration on silicon

    Science.gov (United States)

    Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

    2014-02-01

    Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

  3. Design of Surface micromachined Compliant MEMS

    Energy Technology Data Exchange (ETDEWEB)

    Bradley, Joe Anthony [Iowa State Univ., Ames, IA (United States)

    2001-01-01

    The consideration of compliant mechanisms as Microelectromechanical Systems (MEMS) is the focus of this research endeavor. MEMS are micron to millimeter devices that combine electrical, mechanical, and information processing capabilities on the same device. These MEMS need some mechanical motion or parts that move relative to each other. This relative motion, using multiple parts, is not desired because of the assembly requirement and the friction introduced. Compliant devices limits or eliminates friction and the need for multi-component assembly. Compliant devices improve designs by creating single piece mechanisms. The purpose of this research is to validate surface micromachining as a viable fabrication process for compliant MEMS designs. Specifically, this research has sought to fabricate a micro-compliant gripper and a micro-compliant clamp to illustrate the process. While other researchers have created compliant MEMS, most have used comb-drive actuation methods and bulk micromachining processes. This research focuses on fully-compliant devices that use device flexibility for motion and actuation. Validation of these compliant MEMS is achieved by structural optimization of device design and functional performance testing. This research contributes to the ongoing research in MEMS by evaluating the potential of using surface micromachining as a process for fabricating compliant micro-mechanisms.

  4. Design of Surface Micromachined Compliant MEMS

    Energy Technology Data Exchange (ETDEWEB)

    Bradley, Joe Anthony [Iowa State Univ., Ames, IA (United States)

    2002-12-31

    The consideration of compliant mechanisms as Microelectromechanical Systems (MEMS) is the focus of this research endeavor. MEMS are micron to millimeter devices that combine electrical, mechanical, and information processing capabilities on the same device. These MEMS need some mechanical motion or parts that move relative to each other. This relative motion, using multiple parts, is not desired because of the assembly requirement and the friction introduced. Compliant devices limits or eliminates friction and the need for multi-component assembly. Compliant devices improve designs by creating single piece mechanisms. The purpose of this research is to validate surface micromachining as a viable fabrication process for compliant MEMS designs. Specifically, this research has sought to fabricate a micro-compliant gripper and a micro-compliant clamp to illustrate the process. While other researchers have created compliant MEMs, most have used comb-drive actuation methods and bulk micromachining processes. This research focused on fully-compliant devices that use device flexibility for motion and actuation. Validation of these compliant MEMS is achieved by structural optimization of device design and functional performance testing. This research contributes to the ongoing research in MEMS by evaluating the potential of using surface micromachining as a process for fabricating compliant micro-mechanisms.

  5. Ultraminiature resonator accelerometer

    Energy Technology Data Exchange (ETDEWEB)

    Koehler, D.R.; Kravitz, S.H.; Vianco, P.T.

    1996-04-01

    A new family of microminiature sensors and clocks is being developed with widespread application potential for missile and weapons applications, as biomedical sensors, as vehicle status monitors, and as high-volume animal identification and health sensors. To satisfy fundamental technology development needs, a micromachined clock and an accelerometer have initially been undertaken as development projects. A thickness-mode quartz resonator housed in a micromachined silicon package is used as the frequency-modulated basic component of the sensor family. Resonator design philosophy follows trapped energy principles and temperature compensation methodology through crystal orientation control, with operation in the 20--100 MHz range, corresponding to quartz wafer thicknesses in the 75--15 micron range. High-volume batch-processing manufacturing is utilized, with package and resonator assembly at the wafer level. Chemical etching of quartz, as well as micromachining of silicon, achieves the surface and volume mechanical features necessary to fashion the resonating element and the mating package. Integration of the associated oscillator and signal analysis circuitry into the silicon package is inherent to the realization of a size reduction requirement. A low temperature In and In/Sn bonding technology allows assembly of the dissimilar quartz and silicon materials, an otherwise challenging task. Unique design features include robust vibration and shock performance, capacitance sensing with micromachined diaphragms, circuit integration, capacitance-to-frequency transduction, and extremely small dimensioning. Accelerometer sensitivities were measured in the 1--3 ppm/g range for the milligram proof-mass structures employed in the prototypes evaluated to date.

  6. Macrodesign for microdevices: Polysilicon surface-micromachining technology, applications and issues

    Energy Technology Data Exchange (ETDEWEB)

    Sniegowski, J.J. [Sandia National Labs., Albuquerque, NM (United States). Intelligent Micromachine Dept.

    1997-05-01

    The intent of this tutorial is to overview the technology of multi-level polysilicon surface micromachining, to present examples of devices which fully utilize this level of complexity, and to discuss what they believe to be significant issues which are not fully resolved. Following this intent, the tutorial consists of four sections. The first is an introduction and description of multi-level polysilicon surface micromachining and its potential benefits. Specifically, the inclusion of a third deposited layer of mechanical polysilicon greatly extends the degree of complexity available for micromechanism design. The second section introduces wafer planarization by CMP as a process tool for surface micromachining. The third section presents examples of actuated geared micromechanisms which require the multi-level fabrication process. Demonstration of actuation mechanisms coupled to external devices are illustrated. Finally, polysilicon surface micromachining fabrication technology has reached a level where many device designs, for the most part, can be embodied in the technology to produce a mechanical construct which provides the desired function. When designed properly, the fabricated mechanical element, if free to operate, will produce the desired function. However, one set of issues which can hinder or prevent operation are related to the post-fabricated device surfaces. These surface issues; namely, stiction, friction, and wear, are emphasized in the final section as a major hindrance to realizing the full potential of surface micromachined devices.

  7. Hybrid micromachining using a nanosecond pulsed laser and micro EDM

    International Nuclear Information System (INIS)

    Kim, Sanha; Chung, Do Kwan; Shin, Hong Shik; Chu, Chong Nam; Kim, Bo Hyun

    2010-01-01

    Micro electrical discharge machining (micro EDM) is a well-known precise machining process that achieves micro structures of excellent quality for any conductive material. However, the slow machining speed and high tool wear are main drawbacks of this process. Though the use of deionized water instead of kerosene as a dielectric fluid can reduce the tool wear and increase the machine speed, the material removal rate (MRR) is still low. In contrast, laser ablation using a nanosecond pulsed laser is a fast and non-wear machining process but achieves micro figures of rather low quality. Therefore, the integration of these two processes can overcome the respective disadvantages. This paper reports a hybrid process of a nanosecond pulsed laser and micro EDM for micromachining. A novel hybrid micromachining system that combines the two discrete machining processes is introduced. Then, the feasibility and characteristics of the hybrid machining process are investigated compared to conventional EDM and laser ablation. It is verified experimentally that the machining time can be effectively reduced in both EDM drilling and milling by rapid laser pre-machining prior to micro EDM. Finally, some examples of complicated 3D micro structures fabricated by the hybrid process are shown

  8. Cobalt micro-magnet integration on silicon MOS quantum dots

    Science.gov (United States)

    Camirand Lemyre, Julien; Rochette, Sophie; Anderson, John; Manginell, Ronald P.; Pluym, Tammy; Ward, Dan; Carroll, Malcom S.; Pioro-Ladrière, Michel

    Integration of cobalt micro-magnets on silicon metal-oxide-semiconductor (MOS) quantum dot devices has been investigated. The micro-magnets are fabricated in a lift-off process with e-beam lithography and deposited directly on top of an etched poly-silicon gate stack. Among the five resist stacks tested, one is found to be compatible with our MOS specific materials (Si and SiO2) . Moreover, devices with and without additional Al2O3 insulating layer show no additional gate leakage after processing. Preliminary transport data indicates electrostatic stability of our devices with integrated magnets. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  9. Al transmon qubits on silicon-on-insulator for quantum device integration

    Science.gov (United States)

    Keller, Andrew J.; Dieterle, Paul B.; Fang, Michael; Berger, Brett; Fink, Johannes M.; Painter, Oskar

    2017-07-01

    We present the fabrication and characterization of an aluminum transmon qubit on a silicon-on-insulator substrate. Key to the qubit fabrication is the use of an anhydrous hydrofluoric vapor process which selectively removes the lossy silicon oxide buried underneath the silicon device layer. For a 5.6 GHz qubit measured dispersively by a 7.1 GHz resonator, we find T1 = 3.5 μs and T2* = 2.2 μs. This process in principle permits the co-fabrication of silicon photonic and mechanical elements, providing a route towards chip-scale integration of electro-opto-mechanical transducers for quantum networking of superconducting microwave quantum circuits. The additional processing steps are compatible with established fabrication techniques for aluminum transmon qubits on silicon.

  10. A Novel Silicon-based Wideband RF Nano Switch Matrix Cell and the Fabrication of RF Nano Switch Structures

    Directory of Open Access Journals (Sweden)

    Yi Xiu YANG

    2011-12-01

    Full Text Available This paper presents the concept of RF nano switch matrix cell and the fabrication of RF nano switch. The nano switch matrix cell can be implemented into complex switch matrix for signal routing. RF nano switch is the decision unit for the matrix cell; in this research, it is fabricated on a tri-layer high-resistivity-silicon substrate using surface micromachining approach. Electron beam lithography is introduced to define the pattern and IC compatible deposition process is used to construct the metal layers. Silicon-based nano switch fabricated by IC compatible process can lead to a high potential of system integration to perform a cost effective system-on-a-chip solution. In this paper, simulation results of the designed matrix cell are presented; followed by the details of the nano structure fabrication and fabrication challenges optimizations; finally, measurements of the fabricated nano structure along with analytical discussions are also discussed.

  11. High-{Tc} superconducting antenna-coupled microbolometer on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Rice, J.P.; Grossman, E.N.; Borcherdt, L.J.; Rudman, D.A. [National Inst. of Standards and Technology, Boulder, CO (United States). Cryoelectronic Metrology Group

    1994-12-31

    A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-{Tc} superconductor YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 {times} 10{sup {minus}6} W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 {micro}s, a responsivity in the 1,000 V/W range, and a noise-equivalent power (NEP) in the 10{sup {minus}12} W/Hz{sup 1/2} range at 1,000 Hz.

  12. Infra-red laser ablative micromachining of parylene-C on SiO2 substrates for rapid prototyping, high yield, human neuronal cell patterning

    International Nuclear Information System (INIS)

    Raos, B J; Unsworth, C P; Costa, J L; Rohde, C A; Simpson, M C; Doyle, C S; Dickinson, M E; Bunting, A S; Murray, A F; Delivopoulos, E; Graham, E S

    2013-01-01

    Cell patterning commonly employs photolithographic methods for the micro fabrication of structures on silicon chips. These require expensive photo-mask development and complex photolithographic processing. Laser based patterning of cells has been studied in vitro and laser ablation of polymers is an active area of research promising high aspect ratios. This paper disseminates how 800 nm femtosecond infrared (IR) laser radiation can be successfully used to perform laser ablative micromachining of parylene-C on SiO 2 substrates for the patterning of human hNT astrocytes (derived from the human teratocarcinoma cell line (hNT)) whilst 248 nm nanosecond ultra-violet laser radiation produces photo-oxidization of the parylene-C and destroys cell patterning. In this work, we report the laser ablation methods used and the ablation characteristics of parylene-C for IR pulse fluences. Results follow that support the validity of using IR laser ablative micromachining for patterning human hNT astrocytes cells. We disseminate the variation in yield of patterned hNT astrocytes on parylene-C with laser pulse spacing, pulse number, pulse fluence and parylene-C strip width. The findings demonstrate how laser ablative micromachining of parylene-C on SiO 2 substrates can offer an accessible alternative for rapid prototyping, high yield cell patterning with broad application to multi-electrode arrays, cellular micro-arrays and microfluidics. (paper)

  13. Femtosecond versus nanosecond laser machining: comparison of induced stresses and structural changes in silicon wafers

    International Nuclear Information System (INIS)

    Amer, M.S.; El-Ashry, M.A.; Dosser, L.R.; Hix, K.E.; Maguire, J.F.; Irwin, Bryan

    2005-01-01

    Laser micromachining has proven to be a very successful tool for precision machining and microfabrication with applications in microelectronics, MEMS, medical device, aerospace, biomedical, and defense applications. Femtosecond (FS) laser micromachining is usually thought to be of minimal heat-affected zone (HAZ) local to the micromachined feature. The assumption of reduced HAZ is attributed to the absence of direct coupling of the laser energy into the thermal modes of the material during irradiation. However, a substantial HAZ is thought to exist when machining with lasers having pulse durations in the nanosecond (NS) regime. In this paper, we compare the results of micromachining a single crystal silicon wafer using a 150-femtosecond and a 30-nanosecond lasers. Induced stress and amorphization of the silicon single crystal were monitored using micro-Raman spectroscopy as a function of the fluence and pulse duration of the incident laser. The onset of average induced stress occurs at lower fluence when machining with the femtosecond pulse laser. Induced stresses were found to maximize at fluence of 44 J cm -2 and 8 J cm -2 for nanosecond and femtosecond pulsed lasers, respectively. In both laser pulse regimes, a maximum induced stress is observed at which point the induced stress begins to decrease as the fluence is increased. The maximum induced stress was comparable at 2.0 GPa and 1.5 GPa for the two lasers. For the nanosecond pulse laser, the induced amorphization reached a plateau of approximately 20% for fluence exceeding 22 J cm -2 . For the femtosecond pulse laser, however, induced amorphization was approximately 17% independent of the laser fluence within the experimental range. These two values can be considered nominally the same within experimental error. For femtosecond laser machining, some effect of the laser polarization on the amount of induced stress and amorphization was also observed

  14. Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

    CERN Document Server

    Radamson, Henry

    2014-01-01

    Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p

  15. The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

    Science.gov (United States)

    Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

    2017-02-01

    The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

  16. Multi-layer enhancement to polysilicon surface-micromachining technology

    Energy Technology Data Exchange (ETDEWEB)

    Sniegowski, J.J.; Rodgers, M.S. [Sandia National Labs., Albuquerque, NM (United States). Intelligent Micromachine Dept.

    1997-10-01

    A multi-level polysilicon surface-micromachining technology consisting of 5 layers of polysilicon is presented. Surface topography and film mechanical stress are the major impediments encountered in the development of a multilayer surface-micromachining process. However, excellent mechanical film characteristics have been obtained through the use of chemical-mechanical polishing for planarization of topography and by proper sequencing of film deposition with thermal anneals. Examples of operating microactuators, geared power-transfer mechanisms, and optical elements demonstrate the mechanical advantages of construction with 5 polysilicon layers.

  17. Amorphous silicon-based microchannel plates

    International Nuclear Information System (INIS)

    Franco, Andrea; Riesen, Yannick; Wyrsch, Nicolas; Dunand, Sylvain; Powolny, François; Jarron, Pierre; Ballif, Christophe

    2012-01-01

    Microchannel plates (MCP) based on hydrogenated amorphous silicon (a-Si:H) were recently introduced to overcome some of the limitations of crystalline silicon and glass MCP. The typical thickness of a-Si:H based MCPs (AMCP) ranges between 80 and 100 μm and the micromachining of the channels is realized by deep reactive ion etching (DRIE). Advantages and issues regarding the fabrication process are presented and discussed. Electron amplification is demonstrated and analyzed using Electron Beam Induced Current (EBIC) technique. The gain increases as a function of the bias voltage, limited to −340 V on account of high leakage currents across the structure. EBIC maps on 10° tilted samples confirm that the device active area extend to the entire channel opening. AMCP characterization with the electron beam shows gain saturation and signal quenching which depends on the effectiveness of the charge replenishment in the channel walls.

  18. Integration of functional complex oxide nanomaterials on silicon

    Directory of Open Access Journals (Sweden)

    Jose Manuel eVila-Fungueiriño

    2015-06-01

    Full Text Available The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications that can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE. Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be exposed, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.

  19. Roadmap for integration of InP based photonics and silicon electronics

    NARCIS (Netherlands)

    Williams, K.A.

    2015-01-01

    We identify the synergies and a roadmap for the intimate integration of InP photonic integrated circuits and Silicon electronic ICs using wafer-scale processes. Advantages are foreseen in terms of bandwidth, energy savings and package simplification.

  20. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    International Nuclear Information System (INIS)

    Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

    2013-01-01

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n + -type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force

  1. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    Energy Technology Data Exchange (ETDEWEB)

    Mouro, J.; Gualdino, A.; Chu, V. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Conde, J. P. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Department of Bioengineering, Instituto Superior Técnico (IST), 1049-001 Lisbon (Portugal)

    2013-11-14

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

  2. An innovative large scale integration of silicon nanowire-based field effect transistors

    Science.gov (United States)

    Legallais, M.; Nguyen, T. T. T.; Mouis, M.; Salem, B.; Robin, E.; Chenevier, P.; Ternon, C.

    2018-05-01

    Since the early 2000s, silicon nanowire field effect transistors are emerging as ultrasensitive biosensors while offering label-free, portable and rapid detection. Nevertheless, their large scale production remains an ongoing challenge due to time consuming, complex and costly technology. In order to bypass these issues, we report here on the first integration of silicon nanowire networks, called nanonet, into long channel field effect transistors using standard microelectronic process. A special attention is paid to the silicidation of the contacts which involved a large number of SiNWs. The electrical characteristics of these FETs constituted by randomly oriented silicon nanowires are also studied. Compatible integration on the back-end of CMOS readout and promising electrical performances open new opportunities for sensing applications.

  3. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

    Science.gov (United States)

    Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

    2017-12-01

    One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

  4. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

    Science.gov (United States)

    Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

    2017-12-01

    One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

  5. Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit.

    Science.gov (United States)

    Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V

    2014-05-01

    We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.

  6. Silicon photonics integrated circuits: a manufacturing platform for high density, low power optical I/O's.

    Science.gov (United States)

    Absil, Philippe P; Verheyen, Peter; De Heyn, Peter; Pantouvaki, Marianna; Lepage, Guy; De Coster, Jeroen; Van Campenhout, Joris

    2015-04-06

    Silicon photonics integrated circuits are considered to enable future computing systems with optical input-outputs co-packaged with CMOS chips to circumvent the limitations of electrical interfaces. In this paper we present the recent progress made to enable dense multiplexing by exploiting the integration advantage of silicon photonics integrated circuits. We also discuss the manufacturability of such circuits, a key factor for a wide adoption of this technology.

  7. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    Directory of Open Access Journals (Sweden)

    Sandro Rao

    2016-01-01

    Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  8. III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

    Science.gov (United States)

    Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

    2017-08-04

    The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

  9. Localized synthesis, assembly and integration of silicon nanowires

    Science.gov (United States)

    Englander, Ongi

    Localized synthesis, assembly and integration of one-dimensional silicon nanowires with MEMS structures is demonstrated and characterized in terms of local synthesis processes, electric-field assisted self-assembly, and a proof-of-concept nanoelectromechanical system (HEMS) demonstration. Emphasis is placed on the ease of integration, process control strategies, characterization techniques and the pursuit of integrated devices. A top-down followed by a bottom-up integration approach is utilized. Simple MEMS heater structures are utilized as the microscale platforms for the localized, bottom-up synthesis of one-dimensional nanostructures. Localized heating confines the high temperature region permitting only localized nanostructure synthesis and allowing the surroundings to remain at room temperature thus enabling CMOS compatible post-processing. The vapor-liquid-solid (VLS) process in the presence of a catalytic nanoparticle, a vapor phase reactant, and a specific temperature environment is successfully employed locally. Experimentally, a 5nm thick gold-palladium layer is used as the catalyst while silane is the vapor phase reactant. The current-voltage behavior of the MEMS structures can be correlated to the approximate temperature range required for the VLS reaction to take place. Silicon nanowires averaging 45nm in diameter and up to 29mum in length synthesized at growth rates of up to 1.5mum/min result. By placing two MEMS structures in close proximity, 4--10mum apart, localized silicon nanowire growth can be used to link together MEMS structures to yield a two-terminal, self-assembled micro-to-nano system. Here, one MEMS structure is designated as the hot growth structure while a nearby structure is designated as the cold secondary structure, whose role is to provide a natural stopping point for the VLS reaction. The application of a localized electric-field, 5 to 13V/mum in strength, during the synthesis process, has been shown to improve nanowire

  10. An electro-magnetic micromachined actuator monolithically integrated with a vertical shutter for variable optical attenuation

    International Nuclear Information System (INIS)

    Hung, Shao Hsuan; Hsieh, Hsin-Ta; John Su, Guo-Dung

    2008-01-01

    The design, fabrication and test results of an electromagnetic-actuated micromachined variable optical attenuator (VOA) are reported in this paper. Optical attenuation is achieved by moving a shutter into the light path between a pair of single mode fiber collimators. The shutter, consisting of a 500 µm × 1200 µm vertical micromirror, is monolithically integrated with an actuation flap. The micromirror was made by tetra-methyl ammonium hydroxide (TMAH) anisotropic wet etching with a sharp edge and a smooth reflecting surface. By arranging fiber collimators in different configurations, the reported VOA can be used as either normally-on or normally-off modes due to its relatively large shutter surface. The insertion loss of the VOA is 0.2 dB and 0.4 dB for normally-on and normally-off modes, respectively. Both optical and mechanical simulation models of the device were discussed, and the theoretical calculations based on these models offered an efficient way to predict the performance of the shutter-type VOA. The controllable attenuation range is approximately 40 dB with a driving voltage less than 0.5 V, and the driving power is less than 2 mW. A response time of 5 ms is achieved by applying proper driving waveform

  11. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  12. Electron beam micromachining of plastics

    Czech Academy of Sciences Publication Activity Database

    Dupák, Libor

    2014-01-01

    Roč. 49, 5-6 (2014), s. 310-314 ISSN 0861-4717 R&D Projects: GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01; GA MŠk EE.2.3.20.0103 Institutional support: RVO:68081731 Keywords : micromachining of plastics * Electron beam Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  13. Demonstration of Robust Micromachined Jet Technology and its Application to Realistic Flow Control Problems

    National Research Council Canada - National Science Library

    Allen, Mark

    2000-01-01

    .... Our approaches include: (1) the development of suitable micromachined synthetic jets (microjets) as actuators, which obviate the need to physically extend micromachined structures into an external flow...

  14. Simulation and experimental validation of a SU-8 based PCR thermocycler chip with integrated heaters and temperature sensor

    DEFF Research Database (Denmark)

    El-Ali, Jamil; Perch-Nielsen, Ivan R.; Poulsen, Claus Riber

    2004-01-01

    We present a SU-8 based polymerase chain reaction (PCR) chip with integrated platinum thin film heaters and temperature sensor. The device is fabricated in SU-8 on a glass substrate. The use of SU-8 provides a simple microfabrication process for the PCR chamber, controllable surface properties......C/s, respectively, the performance of the chip is comparable with the best silicon micromachined PCR chips presented in the literature. The SU-8 chamber surface was found to be PCR compatible by amplification of yeast gene ribosomal protein S3 and Campylobacter gene cadF. The PCR compatibility of the chamber...

  15. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

    Science.gov (United States)

    Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

    2018-04-01

    Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

  16. Novel technique for reliability testing of silicon integrated circuits

    NARCIS (Netherlands)

    Le Minh, P.; Wallinga, Hans; Woerlee, P.H.; van den Berg, Albert; Holleman, J.

    2001-01-01

    We propose a simple, inexpensive technique with high resolution to identify the weak spots in integrated circuits by means of a non-destructive photochemical process in which photoresist is used as the photon detection tool. The experiment was done to localize the breakdown link of thin silicon

  17. Integrated MEMS/NEMS Resonant Cantilevers for Ultrasensitive Biological Detection

    Directory of Open Access Journals (Sweden)

    Xinxin Li

    2009-01-01

    Full Text Available The paper reviews the recent researches implemented in Chinese Academy of Sciences, with achievements on integrated resonant microcantilever sensors. In the resonant cantilevers, the self-sensing elements and resonance exciting elements are both top-down integrated with silicon micromachining techniques. Quite a lot of effort is focused on optimization of the resonance mode and sensing structure for improvement of sensitivity. On the other hand, to enable the micro-cantilevers specifically sensitive to bio/chemical molecules, sensing materials are developed and modified on the cantilever surface with a self-assembled monolayer (SAM based bottom-up construction and surface functionalization. To improve the selectivity of the sensors and depress environmental noise, multiple and localized surface modifications are developed. The achieved volume production capability and satisfactory detecting resolution to trace-level biological antigen of alpha-fetoprotein (AFP give the micro-cantilever sensors a great promise for rapid and high-resoluble detection.

  18. Infrared transparent graphene heater for silicon photonic integrated circuits.

    Science.gov (United States)

    Schall, Daniel; Mohsin, Muhammad; Sagade, Abhay A; Otto, Martin; Chmielak, Bartos; Suckow, Stephan; Giesecke, Anna Lena; Neumaier, Daniel; Kurz, Heinrich

    2016-04-18

    Thermo-optical tuning of the refractive index is one of the pivotal operations performed in integrated silicon photonic circuits for thermal stabilization, compensation of fabrication tolerances, and implementation of photonic operations. Currently, heaters based on metal wires provide the temperature control in the silicon waveguide. The strong interaction of metal and light, however, necessitates a certain gap between the heater and the photonic structure to avoid significant transmission loss. Here we present a graphene heater that overcomes this constraint and enables an energy efficient tuning of the refractive index. We achieve a tuning power as low as 22 mW per free spectral range and fast response time of 3 µs, outperforming metal based waveguide heaters. Simulations support the experimental results and suggest that for graphene heaters the spacing to the silicon can be further reduced yielding the best possible energy efficiency and operation speed.

  19. Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

    International Nuclear Information System (INIS)

    Chen Hongda; Zhang Zan; Huang Beiju; Mao Luhong; Zhang Zanyun

    2015-01-01

    Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal–oxide–semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. (review)

  20. High definition surface micromachining of LiNbO 3 by ion implantation

    Science.gov (United States)

    Chiarini, M.; Bentini, G. G.; Bianconi, M.; De Nicola, P.

    2010-10-01

    High Energy Ion Implantation (HEII) of both medium and light mass ions has been successfully applied for the surface micromachining of single crystal LiNbO 3 (LN) substrates. It has been demonstrated that the ion implantation process generates high differential etch rates in the LN implanted areas, when suitable implantation parameters, such as ion species, fluence and energy, are chosen. In particular, when traditional LN etching solutions are applied to suitably ion implanted regions, etch rates values up to three orders of magnitude higher than the typical etching rates of the virgin material, are registered. Further, the enhancement in the etching rate has been observed on x, y and z-cut single crystalline material, and, due to the physical nature of the implantation process, it is expected that it can be equivalently applied also to substrates with different crystallographic orientations. This technique, associated with standard photolithographic technologies, allows to generate in a fast and accurate way very high aspect ratio relief micrometric structures on LN single crystal surface. In this work a description of the developed technology is reported together with some examples of produced micromachined structures: in particular very precisely defined self sustaining suspended structures, such as beams and membranes, generated on LN substrates, are presented. The developed technology opens the way to actual three dimensional micromachining of LN single crystals substrates and, due to the peculiar properties characterising this material, (pyroelectric, electro-optic, acousto-optic, etc.), it allows the design and the production of complex integrated elements, characterised by micrometric features and suitable for the generation of advanced Micro Electro Optical Systems (MEOS).

  1. Minimizing stress in large-area surface micromachined perforated membranes with slits

    International Nuclear Information System (INIS)

    Ghaderi, M; Ayerden, N P; De Graaf, G; Wolffenbuttel, R F

    2015-01-01

    This paper presents the effectiveness of both design and fabrication techniques for avoiding the rupturing or excessive bending of perforated membranes after release in surface micromachining. Special lateral designs of arrays of slits in the membrane were investigated for a maximum yield at a given level of residual stress. Process parameters were investigated and optimized for minimum residual stress in multilayer thin-film membranes. A 2 µm thick sacrificial TEOS layer and a structural membrane that is composed of silicon nitride and polysilicon layers in the stack is the basis of this study. The effect of sharp corners on the local stress in membranes was investigated, and structures are proposed that reduce these effects, maximizing the yield at a given level of residual stress. The effects of perforation and slits were studied both theoretically and using finite element analysis. While the overall effect of perforation is negligible in typical MEMS structures, an optimum design for the slits reduces the von Mises stress considerably as compared to sharp corners. The fabrication process was also investigated and optimized for the minimum residual stress of both the layers within the stack and the complete layer stack. The main emphasis of this work is on placing a stress-compensating layer on the wafer backside and simultaneously removing it during the surface micromachining, as this has been found to be the most effective method to reduce the overall stress in a stack of layers after sacrificial etching. Implementation of a stress compensating layer reduced the total residual stress from 200 MPa compressive into almost 60 MPa, tensile. Even though a particular structure was studied here, the employed methods are expected to be applicable to similar MEMS design problems. (paper)

  2. Trends in laser micromachining

    Science.gov (United States)

    Gaebler, Frank; van Nunen, Joris; Held, Andrew

    2016-03-01

    Laser Micromachining is well established in industry. Depending on the application lasers with pulse length from μseconds to femtoseconds and wavelengths from 1064nm and its harmonics up to 5μm or 10.6μm are used. Ultrafast laser machining using pulses with pico or femtosecond duration pulses is gaining traction, as it offers very precise processing of materials with low thermal impact. Large-scale industrial ultrafast laser applications show that the market can be divided into various sub segments. One set of applications demand low power around 10W, compact footprint and are extremely sensitive to the laser price whilst still demanding 10ps or shorter laser pulses. A second set of applications are very power hungry and only become economically feasible for large scale deployments at power levels in the 100+W class. There is also a growing demand for applications requiring fs-laser pulses. In our presentation we would like to describe these sub segments by using selected applications from the automotive and electronics industry e.g. drilling of gas/diesel injection nozzles, dicing of LED substrates. We close the presentation with an outlook to micromachining applications e.g. glass cutting and foil processing with unique new CO lasers emitting 5μm laser wavelength.

  3. Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

    Science.gov (United States)

    Douglas, Anna; Muralidharan, Nitin; Carter, Rachel; Share, Keith; Pint, Cary L.

    2016-03-01

    Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics. Electronic supplementary information (ESI) available: (i) Experimental details for ALD and material fabrication, ellipsometry film thickness, preparation of gel electrolyte and separator, details for electrochemical measurements, HRTEM image of VOx coated porous silicon, Raman spectroscopy for VOx as-deposited as well as annealed in air for 1 hour at 450 °C, SEM and transient behavior dissolution tests of uniformly coated VOx on

  4. III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range

    Science.gov (United States)

    Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

    2017-01-01

    The availability of silicon photonic integrated circuits (ICs) in the 2–4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III–V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III–V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy. PMID:28777291

  5. Miniature silicon electronic biological assay chip and applications for rapid battlefield diagnostics

    Science.gov (United States)

    Cunningham, Brian T.; Regan, Robert A.; Clapp, Christopher; Hildebrant, Eric; Weinberg, Marc S.; Williams, John

    1999-07-01

    Assessing the medical condition of battlefield personnel requires the development of rapid, portable biological diagnostic assays for a wide variety of antigens and enzymes. Ideally, such an assay would be inexpensive, small, and require no added reagents while maintaining the sensitivity and accuracy of laboratory-based assays. In this work, a microelectromechanical (MEMS) based biological assay sensor is presented which is expected to meet the above requirements. The sensor is a thin silicon membrane resonator (SMR) which registers a decrease in resonant frequency when mass is adsorbed onto its surface. By coating the sensor surface with a monolayer of antibody, for example, we have detected the corresponding antigen with a detection resolution of 0.25 ng/ml in phosphate buffer solution. Micromachining techniques are being used to integrate many (64 elements on the first test chip) identical SMR sensors into a single silicon chip which would be capable of simultaneously performing a wide variety of biomedical assays. The sensors require only a small printed circuit board and 8V power supply to operate and provide a readout. The presentation will describe the operation of the SMR sensor, the fabrication of the sensor array, and initial test results using commercially available animal immunoglobulins in laboratory-prepared test solutions.

  6. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea

    This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project...

  7. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea; Svendsen, Winnie Edith; Dimaki, Maria

    2016-01-01

    This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project...

  8. High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

    DEFF Research Database (Denmark)

    Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld

    2017-01-01

    is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually......-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling...

  9. UV laser micromachining of ceramic materials: formation of columnar topographies

    International Nuclear Information System (INIS)

    Oliveira, V.; Vilar, R.; Conde, O.

    2001-01-01

    Laser machining is increasingly appearing as an alternative for micromachining of ceramics. Using ceramic materials using excimer lasers can result in smooth surfaces or in the formation of cone-like or columnar topography. Potential applications of cone-shaped or columnar surface topography include, for example, light trapping in anti-reflection coatings and improvement of adhesion bonding between ceramic materials. In this communication results of a comparative study of surface topography change during micromachining of several ceramic materials with different ablation behaviors are reported. (orig.)

  10. Hybrid Integrated Silicon Microfluidic Platform for Fluorescence Based Biodetection

    Directory of Open Access Journals (Sweden)

    André Darveau

    2007-09-01

    Full Text Available The desideratum to develop a fully integrated Lab-on-a-chip device capable ofrapid specimen detection for high throughput in-situ biomedical diagnoses and Point-of-Care testing applications has called for the integration of some of the novel technologiessuch as the microfluidics, microphotonics, immunoproteomics and Micro ElectroMechanical Systems (MEMS. In the present work, a silicon based microfluidic device hasbeen developed for carrying out fluorescence based immunoassay. By hybrid attachment ofthe microfluidic device with a Spectrometer-on-chip, the feasibility of synthesizing anintegrated Lab-on-a-chip type device for fluorescence based biosensing has beendemonstrated. Biodetection using the microfluidic device has been carried out usingantigen sheep IgG and Alexafluor-647 tagged antibody particles and the experimentalresults prove that silicon is a compatible material for the present application given thevarious advantages it offers such as cost-effectiveness, ease of bulk microfabrication,superior surface affinity to biomolecules, ease of disposability of the device etc., and is thussuitable for fabricating Lab-on-a-chip type devices.

  11. Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics.

    Science.gov (United States)

    Chen, Che; Youngblood, Nathan; Peng, Ruoming; Yoo, Daehan; Mohr, Daniel A; Johnson, Timothy W; Oh, Sang-Hyun; Li, Mo

    2017-02-08

    We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

  12. Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

    International Nuclear Information System (INIS)

    Lauermann, M.; Weimann, C.; Palmer, R.; Schindler, P. C.; Koeber, S.; Freude, W.; Koos, C.; Rembe, C.

    2014-01-01

    We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB

  13. Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

    Energy Technology Data Exchange (ETDEWEB)

    Lauermann, M.; Weimann, C.; Palmer, R.; Schindler, P. C. [Institute of Photonics and Quantum Electronics, Karlsruhe Institute of Technology, 76131 Karlsruhe (Germany); Koeber, S.; Freude, W., E-mail: christian.koos@kit.edu; Koos, C., E-mail: christian.koos@kit.edu [Institute of Photonics and Quantum Electronics, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany and Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen (Germany); Rembe, C. [Polytec GmbH, 76337 Waldbronn (Germany)

    2014-05-27

    We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB.

  14. Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

    Science.gov (United States)

    Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

    2018-04-16

    Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

  15. Feasibility studies of microelectrode silicon detectors with integrated electronics

    International Nuclear Information System (INIS)

    Dalla Betta, G.-F.; Batignani, G.; Bettarini, S.; Boscardin, M.; Bosisio, L.; Carpinelli, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Lusiani, A.; Manghisoni, M.; Pignatel, G.U.; Rama, M.; Ratti, L.; Re, V.; Sandrelli, F.; Speziali, V.; Svelto, F.; Zorzi, N.

    2002-01-01

    We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source-follower configuration is introduced

  16. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  17. High aspect ratio channels in glass and porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Liang, H.D. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Nanoscience and Nanotechnology Initiative (NNI), National University of Singapore, Singapore 117411 (Singapore); Dang, Z.Y. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Wu, J.F. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Kan, J.A. van; Qureshi, S. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Ynsa, M.D.; Torres-Costa, V. [Department of Applied Physics, Universidad Autónoma de Madrid, Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Centro de Micro-Análisis de Materiales (CMAM), Universidad Autónoma de Madrid, Campus de Cantoblanco Edif. 22, Faraday 3, E-28049 Madrid (Spain); Maira, A. [Department of Applied Physics, Universidad Autónoma de Madrid, Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Venkatesan, T.V. [Nanoscience and Nanotechnology Initiative (NNI), National University of Singapore, Singapore 117411 (Singapore); Breese, M.B.H., E-mail: phymbhb@nus.edu.sg [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore)

    2017-03-01

    We have developed a micromachining process to produce high-aspect-ratio channels and holes in glass and porous silicon. Our process utilizes MeV proton beam irradiation of silicon using direct writing with a focused beam, followed by electrochemical etching. To increase throughput we have also developed another process for large area ion irradiation based on a radiation-resistant gold surface mask, allowing many square inches to be patterned. We present a study of the achievable channel width, depth and period and sidewall verticality for a range of channels which can be over 100 μm deep or 100 nm wide with aspect ratios up to 80. This process overcomes the difficulty of machining glass on a micro- and nanometer scale which has limited many areas of applications in different fields such as microelectronics and microfluidics.

  18. A high-temperature silicon-on-insulator stress sensor

    International Nuclear Information System (INIS)

    Wang Zheyao; Tian Kuo; Zhou Youzheng; Pan Liyang; Liu Litian; Hu Chaohong

    2008-01-01

    A piezoresistive stress sensor is developed using silicon-on-insulator (SOI) wafers and calibrated for stress measurement for high-temperature applications. The stress sensor consists of 'silicon-island-like' piezoresistor rosettes that are etched on the SOI layer. This eliminates leakage current and enables excellent electrical insulation at high temperature. To compensate for the measurement errors caused by the misalignment of the piezoresistor rosettes with respect to the crystallographic axes, an anisotropic micromachining technique, tetramethylammonium hydroxide etching, is employed to alleviate the misalignment issue. To realize temperature-compensated stress measurement, a planar diode is fabricated as a temperature sensor to decouple the temperature information from the piezoresistors, which are sensitive to both stress and temperature. Design, fabrication and calibration of the piezoresistors are given. SOI-related characteristics such as piezoresistive coefficients and temperature coefficients as well as the influence of the buried oxide layer are discussed in detail

  19. Mode converter based on an inverse taper for multimode silicon nanophotonic integrated circuits.

    Science.gov (United States)

    Dai, Daoxin; Mao, Mao

    2015-11-02

    An inverse taper on silicon is proposed and designed to realize an efficient mode converter available for the connection between multimode silicon nanophotonic integrated circuits and few-mode fibers. The present mode converter has a silicon-on-insulator inverse taper buried in a 3 × 3μm(2) SiN strip waveguide to deal with not only for the fundamental mode but also for the higher-order modes. The designed inverse taper enables the conversion between the six modes (i.e., TE(11), TE(21), TE(31), TE(41), TM(11), TM(12)) in a 1.4 × 0.22μm(2) multimode SOI waveguide and the six modes (like the LP(01), LP(11a), LP(11b) modes in a few-mode fiber) in a 3 × 3μm(2) SiN strip waveguide. The conversion efficiency for any desired mode is higher than 95.6% while any undesired mode excitation ratio is lower than 0.5%. This is helpful to make multimode silicon nanophotonic integrated circuits (e.g., the on-chip mode (de)multiplexers developed well) available to work together with few-mode fibers in the future.

  20. Complex three-dimensional structures in Si{1 0 0} using wet bulk micromachining

    International Nuclear Information System (INIS)

    Pal, Prem; Sato, Kazuo

    2009-01-01

    Complex three-dimensional structures for microelectromechanical systems (MEMS) are fabricated in Si{1 0 0} wafers using wet bulk micromachining. The structures are divided into two categories: fixed and freestanding. The fabrication processes for both types utilize single wafers with sequentially deposited nitride and oxide layers, local oxidation of silicon (LOCOS) and two steps of wet anisotropic etching. The fixed structures contain perfectly sharp edges. Thermally deposited oxide is used as the material for the freestanding structures. Wet etching is performed in tetramethyl ammonium hydroxide (TMAH) with and without Triton X-100 (C 14 H 22 O(C 2 H 4 O) n , n = 9–10). For the fixed structures, both etching steps are performed either in 25 wt% TMAH + Triton or pure TMAH or both, depending upon the type of the structures. In the case of freestanding systems, TMAH + Triton is utilized first, followed by pure TMAH. The fabrication methods enable densely arrayed structures, allowing the manufacture of corrugated diaphragms, compact size liquid (or gas) flow delivery systems, newly shaped mold for soft MEMS structures (e.g. PDMS (polydimethylsiloxane)) and other applications. The present research is an approach to fabricate advanced MEMS structures, extending the range of 3D structures fabricated by silicon anisotropic etching

  1. Model Design of Piezoelectric Micromachined Modal Gyroscope

    Directory of Open Access Journals (Sweden)

    Xiaojun Hu

    2011-01-01

    Full Text Available This paper reports a novel kind of solid-state microgyroscope, which is called piezoelectric micromachined modal gyroscope (PMMG. PMMG has large stiffness and robust resistance to shake and strike because there is no evident mass-spring component in its structure. This work focused on quantitative optimization of the gyroscope, which is still blank for such gyroscope. The modal analysis by the finite element method (FEM was firstly conducted. A set of quantitative indicators were developed to optimize the operation mode. By FEM, the harmonic analysis was conducted to find the way to efficiently actuate the operational mode needed. The optimal configuration of driving electrodes was obtained. At last, the Coriolis analysis was conducted to show the relation between angular velocity and differential output voltage by the Coriolis force under working condition. The results obtained in this paper provide theoretical basis for realizing this novel kind of micromachined gyroscope.

  2. Micromachining. CERN Courier, Jul-Aug 1995, v. 35(5)

    International Nuclear Information System (INIS)

    Wilson, Martin

    1995-01-01

    Full text: As well as making microcircuit components, X-ray lithography can also be used to make very small mechanical parts, either by using directly the exposed and developed photoresist, or as a mould to produce the component in another material such as ceramic or metal. In this revolutionary technology, metal components are made via the LIGA (Lithographic Galvanoformung und Abformung) technique in which the exposed and developed photoresist is coated with a conducting material and then electroplated, after which the resist is stripped away. In addition to fine size and precision resolution, X-rays offer the advantage of deep penetration and small scattering through the resist, so that patterns may be up to a millimetre deep, with very accurate straightness in directions parallel to the beam. Micromachining via LIGA was developed at KfK Karlsruhe; commercialization and further development is being vigorously pursued by the Institut fur Mikrotechnik in Mainz and by Microparts GmbH in Karlsruhe. Significant developments have been made at the Synchrotron Radiation Centre in Madison, Wisconsin, with new programmes start-ing at SRRC (Taiwan), CAMD (Baton Rouge, Louisiana), and LURE (Paris). There is now an active European Special Interest Group for LIGA. Commercially manufactured micromachines are starting to be used in sensors and connectors. The ability to integrate microdevices with microelectronics raises many interesting possibilities for the future, notably in medicine and for intelligent sensors. In all cases, however, widespread adoption will be governed by the ability to mass-produce cheaply, requiring high volume production. The high intensities of synchrotron radiation will assist in achieving these large throughputs

  3. Technology for the compatible integration of silicon detectors with readout electronics

    International Nuclear Information System (INIS)

    Zimmer, G.

    1984-01-01

    Compatible integration of detectors and readout electronics on the same silicon substrate is of growing interest. As the methods of microelectronics technology have already been adapted for detector fabrication, a common technology basis for detectors and readout electronics is available. CMOS technology exhibits most attractive features for the compatible realization of readout electronics when advanced LSI processing steps are combined with detector requirements. The essential requirements for compatible integration are the availability of high resistivity (100)-oriented single crystalline silicon substrate, the formation of suitably doped areas for MOS circuits and the isolation of the low voltage circuit from the detector operated at much higher supply voltage. Junction isolation as a first approach based on present production technology and dielectric isolation based on an advanced SOI-LSI technology are discussed as the most promising solutions for present and future applications, respectively. (orig.)

  4. Integrated GaN photonic circuits on silicon (100) for second harmonic generation

    OpenAIRE

    Xiong, Chi; Pernice, Wolfram; Ryu, Kevin K.; Schuck, Carsten; Fong, King Y.; Palacios, Tomas; Tang, Hong X.

    2014-01-01

    We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \\{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and ...

  5. Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

    Science.gov (United States)

    Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

    2017-06-26

    A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

  6. Fabrication of miniaturised Si-based electrocatalytic membranes

    International Nuclear Information System (INIS)

    D'Arrigo, G.; Spinella, C.; Arena, G.; Lorenti, S.

    2003-01-01

    The increasing interest for light and movable electronic systems, cell phones and small digital devices, drives the technological research toward integrated regenerating power sources with small dimensions and great autonomy. Conventional batteries are already unable to deliver power in more and more shrunk volumes maintaining the requirements of long duration and light weight. A possible solution to overcome these limits is the use of miniaturised fuel cell. The fuel cell offers a greater gravimetric energy density compared to conventional batteries. The micromachining technology of silicon is an important tool to reduce the fuel cell structure to micrometer sizes. The use of silicon also gives the opportunity to integrate the power source and the electronic circuits controlling the fuel cell on the same structure. This paper reports preliminary results concerning the micromachining procedure for fabricating a Si-based electrocatalytic membrane for miniaturised Si-based proton exchange membrane fuel cells (PEMFC)

  7. Micromachined sensor for stress measurement and micromechanical study of free-standing thin films for MEMS applications

    Science.gov (United States)

    Zhang, Ping

    Microelectromechanical systems (MEMS) have a wide range of applications. In the field of wireless and microwave technology, considerable attention has been given to the development and integration of MEMS-based RF (radio frequency) components. An RF MEMS switch requires low insertion loss, high isolation, and low actuation voltage - electrical aspects that have been extensively studied. The mechanical requirements of the switch, such as low sensitivity to built-in stress and high reliability, greatly depend on the micromechanical properties of the switch materials, and have not been thoroughly explored. RF MEMS switches are typically in the form of a free-standing thin film structure. Large stress gradients and across-wafer stress variations developed during fabrication severely degrade their electrical performance. A micromachined stress measurement sensor has been developed that can potentially be employed for in-situ monitoring of stress evolution and stress variation. The sensors were micromachined using five masks on two wafer levels, each measuring 5x3x1 mm. They function by means of an electron tunneling mechanism, where a 2x2 mm silicon nitride membrane elastically deflects under an applied deflection voltage via an external feedback circuitry. For the current design, the sensors are capable of measuring tensile stresses up to the GPa range under deflection voltages of 50--100 V. Sensor functionality was studied by finite element modeling and a theoretical analysis of square membrane deflection. While the mechanical properties of thin films on substrates have been extensively studied, studies of free-standing thin films have been limited due to the practical difficulties in sample handling and testing. Free-standing Al and Al-Ti thin films specimens have been successfully fabricated and microtensile and stress relaxation tests have been performed using a custom-designed micromechanical testing apparatus. A dedicated TEM (transmission electron microscopy

  8. Crystalline Silicon Interconnected Strips (XIS). Introduction to a New, Integrated Device and Module Concept

    Energy Technology Data Exchange (ETDEWEB)

    Van Roosmalen, J.; Bronsveld, P.; Mewe, A.; Janssen, G.; Stodolny, M.; Cobussen-Pool, E.; Bennett, I.; Weeber, A.; Geerligs, B. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG, Petten (Netherlands)

    2012-06-15

    A new device concept for high efficiency, low cost, wafer based silicon solar cells is introduced. To significantly lower the costs of Si photovoltaics, high efficiencies and large reductions of metals and silicon costs are required. To enable this, the device architecture was adapted into low current devices by applying thin silicon strips, to which a special high efficiency back-contact heterojunction cell design was applied. Standard industrial production processes can be used for our fully integrated cell and module design, with a cost reduction potential below 0.5 euro/Wp. First devices have been realized demonstrating the principle of a series connected back contact hybrid silicon heterojunction module concept.

  9. Analysis and prediction of dimensions and cost of laser micro-machining internal channel fabrication process

    Directory of Open Access Journals (Sweden)

    Brabazon D.

    2010-06-01

    Full Text Available This paper presents the utilisation of Response Surface Methodology (RSM as the prediction tool for the laser micro-machining process. Laser internal microchannels machined using pulsed Nd:YVO4 laser in polycarbonate were investigated. The experiments were carried out according to 33 factorial Design of Experiment (DoE. In this work the three input process set as control parameters were laser power, P; pulse repetition frequency, PRF; and sample translation speed, U. Measured responses were the channel width and the micro-machining operating cost per metre of produced microchannels. The responses were sufficiently predicted within the set micro-machining parameters limits. Two factorial interaction (2FI and quadratic polynomial regression equations for both responses were constructed. It is proposed that the developed prediction equations can be used to find locally optimal micro-machining process parameters under experimental and operational conditions.

  10. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  11. Wafer Scale Integration of CMOS Chips for Biomedical Applications via Self-Aligned Masking.

    Science.gov (United States)

    Uddin, Ashfaque; Milaninia, Kaveh; Chen, Chin-Hsuan; Theogarajan, Luke

    2011-12-01

    This paper presents a novel technique for the integration of small CMOS chips into a large area substrate. A key component of the technique is the CMOS chip based self-aligned masking. This allows for the fabrication of sockets in wafers that are at most 5 µm larger than the chip on each side. The chip and the large area substrate are bonded onto a carrier such that the top surfaces of the two components are flush. The unique features of this technique enable the integration of macroscale components, such as leads and microfluidics. Furthermore, the integration process allows for MEMS micromachining after CMOS die-wafer integration. To demonstrate the capabilities of the proposed technology, a low-power integrated potentiostat chip for biosensing implemented in the AMI 0.5 µm CMOS technology is integrated in a silicon substrate. The horizontal gap and the vertical displacement between the chip and the large area substrate measured after the integration were 4 µm and 0.5 µm, respectively. A number of 104 interconnects are patterned with high-precision alignment. Electrical measurements have shown that the functionality of the chip is not affected by the integration process.

  12. Micromachined Piezoelectric Actuators for Cryogenic Adaptive Optics, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — TRS Technologies proposes micromachined single crystal piezoelectric actuator arrays to enable ultra-large stroke, high precision shape control for large aperture,...

  13. Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

    2016-01-01

    Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

  14. High lane density slab-gel electrophoresis using micromachined instrumentation.

    Science.gov (United States)

    Papautsky, I; Mohanty, S; Weiss, R; Frazier, A B

    2001-10-01

    In this paper, micromachined pipette arrays (MPAs) and microcombs were studied as a means of enabling high lane density gel electrophoresis. The MPA provide a miniaturized format to interface sub-microliter volumes of samples between macroscale sample preparation formats and microscale biochemical analysis systems. The microcombs provide a means of creating sample loading wells in the gel material on the same center-to-center spacing as the MPAs. Together, the two micromachined instruments provide an alternative to current combs and pipetting technologies used for creating sample loading wells and sample delivery in gel electrophoresis systems. Using three designs for the microcomb-MPA pair, center-to-center spacings of 1.0 mm, 500 microm, and 250 microm are studied. The results demonstrate an approximate 10-fold increase in lane density and a 10-fold reduction in sample size from 5 microL to 500 pL. As a result, the number of theoretical plates has increased 2.5-fold, while system resolution has increased 1.5-fold over the conventional agarose gel systems. An examination of changes in resolution across the width of individual separation lanes in both systems revealed dependence in the case of the conventional gels and no dependence for the gels loaded with the micromachined instrumentation.

  15. Recent results from the development of silicon detectors with integrated electronics

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, G.-F. E-mail: dallabe@dit.unitn.it; Boscardin, M.; Batignani, G.; Bettarini, S.; Bisogni, M.G.; Bosisio, L.; Carpinelli, M.; Ciacchi, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Manghisoni, M.; Novelli, M.; Piemonte, C.; Rachevskaia, I.; Rama, M.; Ratti, L.; Re, V.; Ronchin, S.; Sandrelli, F.; Simi, G.; Speziali, V.; Rosso, V.; Traversi, G.; Zorzi, N

    2004-02-01

    In the past few years we have developed a technological process allowing for the fabrication of radiation detectors with integrated electronics on high-resistivity silicon substrates. We report on some recent results relevant to the process optimisation and to device/circuit characterization.

  16. Recent results from the development of silicon detectors with integrated electronics

    International Nuclear Information System (INIS)

    Dalla Betta, G.-F.; Boscardin, M.; Batignani, G.; Bettarini, S.; Bisogni, M.G.; Bosisio, L.; Carpinelli, M.; Ciacchi, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Manghisoni, M.; Novelli, M.; Piemonte, C.; Rachevskaia, I.; Rama, M.; Ratti, L.; Re, V.; Ronchin, S.; Sandrelli, F.; Simi, G.; Speziali, V.; Rosso, V.; Traversi, G.; Zorzi, N.

    2004-01-01

    In the past few years we have developed a technological process allowing for the fabrication of radiation detectors with integrated electronics on high-resistivity silicon substrates. We report on some recent results relevant to the process optimisation and to device/circuit characterization

  17. Silicon-based optical integrated circuits for terabit communication networks

    International Nuclear Information System (INIS)

    Svidzinsky, K K

    2003-01-01

    A brief review is presented of the development of silicon-based optical integrated circuits used as components in modern all-optical communication networks with the terabit-per-second transmission capacity. The designs and technologies for manufacturing these circuits are described and the problems related to their development and application in WDM communication systems are considered. (special issue devoted to the memory of academician a m prokhorov)

  18. Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits

    International Nuclear Information System (INIS)

    Qian Li-Bo; Xia Yin-Shui; Zhu Zhang-Ming; Ding Rui-Xue; Yang Yin-Tang

    2014-01-01

    Through-silicon-via (TSV) to TSV crosstalk noise is one of the key factors affecting the signal integrity of three-dimensional integrated circuits (3D ICs). Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 mV and 379 mV reductions in the peak noise voltage, respectively

  19. 77 GHz MEMS antennas on high-resistivity silicon for linear and circular polarization

    KAUST Repository

    Sallam, M. O.

    2011-07-01

    Two new MEMS antennas operating at 77 GHz are presented in this paper. The first antenna is linearly polarized. It possesses a vertical silicon wall that carries a dipole on top of it. The wall is located on top of silicon substrate covered with a ground plane. The other side of the substrate carries a microstrip feeding network in the form of U-turn that causes 180 phase shift. This phase-shifter feeds the arms of the dipole antenna via two vertical Through-Silicon Vias (TSVs) that go through the entire wafer. The second antenna is circularly polarized and formed using two linearly polarized antennas spatially rotated with respect to each other by 90 and excited with 90 phase shift. Both antennas are fabricated using novel process flow on a single high-resistivity silicon wafer via bulk micromachining. Only three processing steps are required to fabricate these antennas. The proposed antennas have appealing characteristics, such as high polarization purity, high gain, and high radiation efficiency. © 2011 IEEE.

  20. First reliability test of a surface micromachined microengine using SHiMMeR

    Energy Technology Data Exchange (ETDEWEB)

    Tanner, D.M.; Smith, N.F.; Bowman, D.J. [and others

    1997-08-01

    The first-ever reliability stress test on surface micromachined microengines developed at Sandia National Laboratories (SNL) has been completed. We stressed 41 microengines at 36,000 RPM and inspected the functionality at 60 RPM. We have observed an infant mortality region, a region of low failure rate (useful life), and no signs of wearout in the data. The reliability data are presented and interpreted using standard reliability methods. Failure analysis results on the stressed microengines are presented. In our effort to study the reliability of MEMS, we need to observe the failures of large numbers of parts to determine the failure modes. To facilitate testing of large numbers of micromachines. The Sandia High Volume Measurement of Micromachine Reliability (SHiMMeR) system has computer controlled positioning and the capability to inspect moving parts. The development of this parallel testing system is discussed in detail.

  1. Ultrahigh-density trench cpacitors in silicon and their application to integrated DC-DC conversion

    NARCIS (Netherlands)

    Roozeboom, F.; Bergveld, H.J.; Nowak, K.; Le Cornec, F.; Guiraud, L.; Bunel, C.; Iochem, S.; Ferreira, J.; Ledain, S.; Pieraerts, E.; Pommier, M.

    2009-01-01

    This paper addresses silicon-based integration of passive components applied to 3D integration with dies of other technologies within one package. Particularly, the development of high-density trench capacitors has enabled the realization of small-formfactor DC-DC converters. As illustration, an

  2. Silicon-Based Technology for Integrated Waveguides and mm-Wave Systems

    DEFF Research Database (Denmark)

    Jovanovic, Vladimir; Gentile, Gennaro; Dekker, Ronald

    2015-01-01

    IC processing is used to develop technology for silicon-filled millimeter-wave-integrated waveguides. The front-end process defines critical waveguide sections and enables integration of dedicated components, such as RF capacitors and resistors. Wafer gluing is used to strengthen the mechanical...... support and deep reactive-ion etching forms the waveguide bulk with smooth and nearly vertical sidewalls. Aluminum metallization covers the etched sidewalls, fully enclosing the waveguides in metal from all sides. Waveguides are fabricated with a rectangular cross section of 560 μm x 280 μm. The measured...

  3. Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

    Science.gov (United States)

    Shahrjerdi, Davood; Bedell, Stephen W

    2013-01-09

    In recent years, flexible devices based on nanoscale materials and structures have begun to emerge, exploiting semiconductor nanowires, graphene, and carbon nanotubes. This is primarily to circumvent the existing shortcomings of the conventional flexible electronics based on organic and amorphous semiconductors. The aim of this new class of flexible nanoelectronics is to attain high-performance devices with increased packing density. However, highly integrated flexible circuits with nanoscale transistors have not yet been demonstrated. Here, we show nanoscale flexible circuits on 60 Å thick silicon, including functional ring oscillators and memory cells. The 100-stage ring oscillators exhibit the stage delay of ~16 ps at a power supply voltage of 0.9 V, the best reported for any flexible circuits to date. The mechanical flexibility is achieved by employing the controlled spalling technology, enabling the large-area transfer of the ultrathin body silicon devices to a plastic substrate at room temperature. These results provide a simple and cost-effective pathway to enable ultralight flexible nanoelectronics with unprecedented level of system complexity based on mainstream silicon technology.

  4. Micro-machined calorimetric biosensors

    Science.gov (United States)

    Doktycz, Mitchel J.; Britton, Jr., Charles L.; Smith, Stephen F.; Oden, Patrick I.; Bryan, William L.; Moore, James A.; Thundat, Thomas G.; Warmack, Robert J.

    2002-01-01

    A method and apparatus are provided for detecting and monitoring micro-volumetric enthalpic changes caused by molecular reactions. Micro-machining techniques are used to create very small thermally isolated masses incorporating temperature-sensitive circuitry. The thermally isolated masses are provided with a molecular layer or coating, and the temperature-sensitive circuitry provides an indication when the molecules of the coating are involved in an enthalpic reaction. The thermally isolated masses may be provided singly or in arrays and, in the latter case, the molecular coatings may differ to provide qualitative and/or quantitative assays of a substance.

  5. A sub-cm micromachined electron microscope

    Science.gov (United States)

    Feinerman, A. D.; Crewe, D. A.; Perng, D. C.; Shoaf, S. E.; Crewe, A. V.

    1993-01-01

    A new approach for fabricating macroscopic (approximately 10x10x10 mm(exp 3)) structures with micron accuracy has been developed. This approach combines the precision of semiconductor processing and fiber optic technologies. A (100) silicon wafer is anisotropically etched to create four orthogonal v-grooves and an aperture on each 10x12 mm die. Precision 308 micron optical fibers are sandwiched between the die to align the v-grooves. The fiber is then anodically bonded to the die above and below it. This procedure is repeated to create thick structures and a stack of 5 or 6 die will be used to create a miniature scanning electron microscope (MSEM). Two die in the structure will have a segmented electrode to deflect the beam and correct for astigmatism. The entire structure is UHV compatible. The performance of an SEM improves as its length is reduced and a sub-cm 2 keV MSEM with a field emission source should have approximately 1 nm resolution. A low voltage high resolution MSEM would be useful for the examination of biological specimens and semiconductors with a minimum of damage. The first MSEM will be tested with existing 6 micron thermionic sources. In the future a micromachined field emission source will be used. The stacking technology presented in this paper can produce an array of MSEMs 1 to 30 mm in length with a 1 mm or larger period. A key question being addressed by this research is the optimum size for a low voltage MSEM which will be determined by the required spatial resolution, field of view, and working distance.

  6. Heterogenous integration of a thin-film GaAs photodetector and a microfluidic device on a silicon substrate

    International Nuclear Information System (INIS)

    Song, Fuchuan; Xiao, Jing; Udawala, Fidaali; Seo, Sang-Woo

    2011-01-01

    In this paper, heterogeneous integration of a III–V semiconductor thin-film photodetector (PD) with a microfluidic device is demonstrated on a SiO 2 –Si substrate. Thin-film format of optical devices provides an intimate integration of optical functions with microfluidic devices. As a demonstration of a multi-material and functional system, the biphasic flow structure in the polymeric microfluidic channels was co-integrated with a III–V semiconductor thin-film PD. The fluorescent drops formed in the microfluidic device are successfully detected with an integrated thin-film PD on a silicon substrate. The proposed three-dimensional integration structure is an alternative approach to combine optical functions with microfluidic functions on silicon-based electronic functions.

  7. Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

    Energy Technology Data Exchange (ETDEWEB)

    Halbwax, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Sarnet, T. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France)], E-mail: sarnet@lp3.univ-mrs.fr; Hermann, J.; Delaporte, Ph.; Sentis, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Fares, L.; Haller, G. [STMicroelectronics, 190 Avenue Celestin Coq, ZI, 13106 Rousset Cedex (France)

    2007-12-15

    The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring.

  8. Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

    International Nuclear Information System (INIS)

    Halbwax, M.; Sarnet, T.; Hermann, J.; Delaporte, Ph.; Sentis, M.; Fares, L.; Haller, G.

    2007-01-01

    The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring

  9. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

    2016-07-04

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  10. Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV).

    Science.gov (United States)

    Shen, Wen-Wei; Chen, Kuan-Neng

    2017-12-01

    3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.

  11. Predicting the Deflections of Micromachined Electrostatic Actuators Using Artificial Neural Network (ANN

    Directory of Open Access Journals (Sweden)

    Hing Wah LEE

    2009-03-01

    Full Text Available In this study, a general purpose Artificial Neural Network (ANN model based on the feed-forward back-propagation (FFBP algorithm has been used to predict the deflections of a micromachined structures actuated electrostatically under different loadings and geometrical parameters. A limited range of simulation results obtained via CoventorWare™ numerical software will be used initially to train the neural network via back-propagation algorithm. The micromachined structures considered in the analyses are diaphragm, fixed-fixed beams and cantilevers. ANN simulation results are compared with results obtained via CoventorWare™ simulations and existing analytical work for validation purpose. The proposed ANN model accurately predicts the deflections of the micromachined structures with great reduction of simulation efforts, establishing the method superiority. This method can be extended for applications in other sensors particularly for modeling sensors applying electrostatic actuation which are difficult in nature due to the inherent non-linearity of the electro-mechanical coupling response.

  12. Analysis of silicon-based integrated photovoltaic-electrochemical hydrogen generation system under varying temperature and illumination

    Institute of Scientific and Technical Information of China (English)

    Vishwa Bhatt; Brijesh Tripathi; Pankaj Yadav; Manoj Kumar

    2017-01-01

    Last decade witnessed tremendous research and development in the area of photo-electrolytic hydrogen generation using chemically stable nanostructured photo-cathode/anode materials.Due to intimately coupled charge separation and photo-catalytic processes,it is very difficult to optimize individual components of such system leading to a very low demonstrated solar-to-fuel efficiency (SFE) of less than 1%.Recently there has been growing interest in an integrated photovoltaic-electrochemical (PV-EC) system based on GaAs solar cells with the demonstrated SFE of 24.5% under concentrated illumination condition.But a high cost of GaAs based solar cells and recent price drop of poly-crystalline silicon (pc-Si) solar cells motivated researchers to explore silicon based integrated PV-EC system.In this paper a theoretical framework is introduced to model silicon-based integrated PV-EC device.The theoretical framework is used to analyze the coupling and kinetic losses of a silicon solar cell based integrated PV-EC water splitting system under varying temperature and illumination.The kinetic loss occurs in the range of 19.1%-27.9% and coupling loss takes place in the range of 5.45%-6.74% with respect to varying illumination in the range of 20-100 mW/cm2.Similarly,the effect of varying temperature has severe impact on the performance of the system,wherein the coupling loss occurs in the range of 0.84%-21.51% for the temperature variation from 25 to 50 ℃.

  13. Experimental Demonstration of 7 Tb/s Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We demonstrate BER performance <10^-9 for a 1 Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers.......We demonstrate BER performance integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers....

  14. Achievement report for fiscal 1996 on the research and development of micromachine technology. Development of advanced-function maintenance technology for power generation facilities; 1996 nendo micromachine gijutsu no kenkyu kaihatsu seika hokokusho. Hatsuden shisetsuyo kokino maintenance gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    Technologies for integrating functions are studied for a self-propelled surroundings recognition system that travels in a small-diameter tube at power generation facilities. Parameters are analyzed, and piezoelectric locomotion devices are reduced in size. A disk shape microantenna is experimentally built and evaluated, which is for realizing energy supply and communication by means of microwaves. Studies are conducted to improve the performance of optical energy transmission devices and to realize their systematization. Basic specifications are established for the embodiment of CCD (charge coupled device) microcameras to be installed. A high-efficiency, high-reliability micromachine system is constructed, in which multiple machines coordinate with each other for the exterior inspection of groups of small-diameter tubes. Devices which are capable of driving, deceleration, and propulsion prove to be feasible. Basic specifications are established for microconnectors to connect, separate, and combine multiple machines as occasion calls. Also discussed is the development of a micromachine for tube interior check and repair which operates making use of the inspection hole enabling tube interior check and repair without the need of disassembling the equipment to be repaired.

  15. Methods and mechanisms of gettering of silicon structures in the production of integrated circuits

    Directory of Open Access Journals (Sweden)

    Pilipenko V. A.

    2013-05-01

    Full Text Available Increasing the degree of integration of hardware components imposes more stringent requirements for the reduction of the concentration of contaminants and oxidation stacking faults in the original silicon wafers with its preservation in the IC manufacturing process cycle. This causes high relevance of the application of gettering in modern microelectronic technology. The existing methods of silicon wafers gettering and the mechanisms of their occurrence are considered.

  16. Microencapsulation of silicon cavities using a pulsed excimer laser

    KAUST Repository

    Sedky, Sherif M.

    2012-06-07

    This work presents a novel low thermal-budget technique for sealing micromachined cavities in silicon. Cavities are sealed without deposition, similar to the silicon surface-migration sealing process. In contrast to the 1100°C furnace anneal required for the migration process, the proposed technique uses short excimer laser pulses (24ns), focused onto an area of 23mm 2, to locally heat the top few microns of the substrate, while the bulk substrate remains near ambient temperature. The treatment can be applied to selected regions of the substrate, without the need for special surface treatments or a controlled environment. This work investigates the effect of varying the laser pulse energy from 400 mJ cm 2to 800 mJ cm 2, the pulse rate from 1Hz to 50Hz and the pulse count from 200 to 3000 pulses on sealing microfabricated cavities in silicon. An analytical model for the effect of holes on the surface temperature distribution is derived, which shows that much higher temperatures can be achieved by increasing the hole density. A mechanism for sealing the cavities is proposed, which indicates how complete sealing is feasible. © 2012 IOP Publishing Ltd.

  17. Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

    Science.gov (United States)

    Fu, Enjin

    Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier

  18. Resonant gravimetric immunosensing based on capacitive micromachined ultrasound transducers

    KAUST Repository

    Viržonis, Darius

    2014-04-08

    High-frequency (40 MHz) and low-frequency (7 MHz) capacitive micromachined ultrasound transducers (CMUT) were fabricated and tested for use in gravimetric detection of biomolecules. The low-frequency CMUT sensors have a gold-coated surface, while the high-frequency sensors have a silicon nitride surface. Both surfaces were functionalized with bovine leukemia virus antigen gp51 acting as the antigen. On addition of an a specific antibody labeled with horseradish peroxidase (HRP), the antigen/antibody complex is formed on the surface and quantified by HRP-catalyzed oxidation of tetramethylbenzidine. It has been found that a considerably smaller quantity of immuno complex is formed on the high frequency sensor surface. In parallel, the loading of the surface of the CMUT was determined via resonance frequency and electromechanical resistance readings. Following the formation of the immuno complexes, the resonance frequencies of the low-frequency and high-frequency sensors decrease by up to 420 and 440 kHz, respectively. Finite element analysis reveals that the loading of the (gold-coated) low frequency sensors is several times larger than that on high frequency sensors. The formation of the protein film with pronounced elasticity and stress on the gold surface case is discussed. We also discuss the adoption of this method for the detection of DNA using a hybridization assay following polymerase chain reaction.

  19. Pulsed Laser Interactions with Silicon Nano structures in Emitter Formation

    International Nuclear Information System (INIS)

    Huat, V.L.C.; Leong, C.S.; Kamaruzzaman Sopian, Saleem Hussain Zaidi

    2015-01-01

    Silicon wafer thinning is now approaching fundamental limits for wafer thickness owing to thermal expansion mismatch between Al and Si, reduced yields in wet-chemical processing as a result of fragility, and reduced optical absorption. An alternate manufacturing approach is needed to eliminate current manufacturing issues. In recent years, pulsed lasers have become readily available and costs have been significantly reduced. Pulsed laser interactions with silicon, in terms of micromachining, diffusions, and edge isolation, are well known, and have become industrial manufacturing tools. In this paper, pulsed laser interactions with silicon nano structures were identified as the most desirable solution for the fundamental limitations discussed above. Silicon nano structures have the capability for extremely high absorption that significantly reduces requirements for laser power, as well as thermal shock to the thinner wafer. Laser-assisted crystallization, in the presence of doping materials, leads to nano structure profiles that are highly desirable for sunlight absorption. The objective of this paper is the replacement of high temperature POCl_3 diffusion by laser-assisted phosphorus layers. With these improvements, complete low-temperature processing of thinner wafers was achievable with 3.7 % efficiency. Two-dimensional laser scanning was proved to be able to form uniformly annealed surfaces with higher fill factor and open-circuit voltage. (author)

  20. MEMS: A new approach to micro-optics

    Energy Technology Data Exchange (ETDEWEB)

    Sniegowski, J.J.

    1997-12-31

    MicroElectroMechanical Systems (MEMS) and their fabrication technologies provide great opportunities for application to micro-optical systems (MOEMS). Implementing MOEMS technology ranges from simple, passive components to complicated, active systems. Here, an overview of polysilicon surface micromachining MEMS combined with optics is presented. Recent advancements to the technology, which may enhance its appeal for micro-optics applications are emphasized. Of all the MEMS fabrication technologies, polysilicon surface micromachining technology has the greatest basis in and leverages the most the infrastructure for silicon integrated circuit fabrication. In that respect, it provides the potential for very large volume, inexpensive production of MOEMS. This paper highlights polysilicon surface micromachining technology in regards to its capability to provide both passive and active mechanical elements with quality optical elements.

  1. Characterisation of silicon carbide films deposited by plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Iliescu, Ciprian; Chen Bangtao; Wei Jiashen; Pang, A.J.

    2008-01-01

    The paper presents a characterisation of amorphous silicon carbide films deposited in plasma-enhanced chemical vapour deposition (PECVD) reactors for MEMS applications. The main parameter was optimised in order to achieve a low stress and high deposition rate. We noticed that the high frequency mode (13.56 MHz) gives a low stress value which can be tuned from tensile to compressive by selecting the correct power. The low frequency mode (380 kHz) generates high compressive stress (around 500 MPa) due to ion bombardment and, as a result, densification of the layer achieved. Temperature can decrease the compressive value of the stress (due to annealing effect). A low etching rate of the amorphous silicon carbide layer was noticed for wet etching in KOH 30% at 80 o C (around 13 A/min) while in HF 49% the layer is practically inert. A very slow etching rate of amorphous silicon carbide layer in XeF 2 -7 A/min- was observed. The paper presents an example of this application: PECVD-amorphous silicon carbide cantilevers fabricated using surface micromachining by dry-released technique in XeF 2

  2. A micromachined membrane-based active probe for biomolecular mechanics measurement

    Science.gov (United States)

    Torun, H.; Sutanto, J.; Sarangapani, K. K.; Joseph, P.; Degertekin, F. L.; Zhu, C.

    2007-04-01

    A novel micromachined, membrane-based probe has been developed and fabricated as assays to enable parallel measurements. Each probe in the array can be individually actuated, and the membrane displacement can be measured with high resolution using an integrated diffraction-based optical interferometer. To illustrate its application in single-molecule mechanics experiments, this membrane probe was used to measure unbinding forces between L-selectin reconstituted in a polymer-cushioned lipid bilayer on the probe membrane and an antibody adsorbed on an atomic force microscope cantilever. Piconewton range forces between single pairs of interacting molecules were measured from the cantilever bending while using the membrane probe as an actuator. The integrated diffraction-based optical interferometer of the probe was demonstrated to have floor for frequencies as low as 3 Hz with a differential readout scheme. With soft probe membranes, this low noise level would be suitable for direct force measurements without the need for a cantilever. Furthermore, the probe membranes were shown to have 0.5 µm actuation range with a flat response up to 100 kHz, enabling measurements at fast speeds.

  3. Integration of the end cap TEC+ of the CMS silicon strip tracker

    Energy Technology Data Exchange (ETDEWEB)

    Bremer, Richard

    2008-04-28

    CMS is the first large experiment of high-energy particle physics whose inner tracking system is exclusively instrumented with silicon detector modules. This tracker comprises 15 148 silicon strip modules enclosing the interaction point in 10-12 layers. The 1. Physikalisches Institut B of RWTH Aachen was deeply involved in the completion of the end caps of the tracking system. The institute played a leading role in the end cap design, produced virtually all support structures and several important electrical components, designed and built the laser alignment system of the tracker, performed system tests and finally integrated one of the two end caps in Aachen. This integration constitutes the central part of the present thesis work. The main focus was on the development of methods to recognise defects early in the integration process and to assert the detector's functionality. Characteristic quantities such as the detector noise or the optical gain of the readout chain were determined during integration as well as during a series of tests performed after transport of the end cap from Aachen to CERN. The procedures followed during the mechanical integration of the detector and during the commissioning of integrated sectors are explained, and the software packages developed for quality assurance are described. In addition, results of the detector readout are presented. During the integration phase, sub-structures of the end cap - named petals - were subjected to a reception test which has also been designed and operated as part of this thesis work. The test setup and software developed for the test are introduced and an account of the analysis of the recorded data is given. Before the end cap project entered the production phase, a final test beam experiment was performed in which the suitability of a system of two fully equipped petals for operation at the LHC was checked. The measured ratio of the signal induced in the silicon sensors by minimal ionising

  4. Integration of the end cap TEC+ of the CMS silicon strip tracker

    International Nuclear Information System (INIS)

    Bremer, Richard

    2008-01-01

    CMS is the first large experiment of high-energy particle physics whose inner tracking system is exclusively instrumented with silicon detector modules. This tracker comprises 15 148 silicon strip modules enclosing the interaction point in 10-12 layers. The 1. Physikalisches Institut B of RWTH Aachen was deeply involved in the completion of the end caps of the tracking system. The institute played a leading role in the end cap design, produced virtually all support structures and several important electrical components, designed and built the laser alignment system of the tracker, performed system tests and finally integrated one of the two end caps in Aachen. This integration constitutes the central part of the present thesis work. The main focus was on the development of methods to recognise defects early in the integration process and to assert the detector's functionality. Characteristic quantities such as the detector noise or the optical gain of the readout chain were determined during integration as well as during a series of tests performed after transport of the end cap from Aachen to CERN. The procedures followed during the mechanical integration of the detector and during the commissioning of integrated sectors are explained, and the software packages developed for quality assurance are described. In addition, results of the detector readout are presented. During the integration phase, sub-structures of the end cap - named petals - were subjected to a reception test which has also been designed and operated as part of this thesis work. The test setup and software developed for the test are introduced and an account of the analysis of the recorded data is given. Before the end cap project entered the production phase, a final test beam experiment was performed in which the suitability of a system of two fully equipped petals for operation at the LHC was checked. The measured ratio of the signal induced in the silicon sensors by minimal ionising particles

  5. Towards a fully integrated indium-phosphide membrane on silicon photonics platform

    NARCIS (Netherlands)

    van Engelen, J.P.; Pogoretskiy, V.; Smit, M.K.; van der Tol, J.J.G.M.; Jiao, Y.

    2017-01-01

    Recently a uni-traveling-carrier photodetector with high speed (> 67GHz) and a high-gain optical amplifier (110/cm at 4 kA/cm2) have been demonstrated using the InP membrane-on-Silicon (IMOS) integration technology. Passives in IMOS have shown features comparable to SOI platforms due to the tight

  6. A CMOS microdisplay with integrated controller utilizing improved silicon hot carrier luminescent light sources

    Science.gov (United States)

    Venter, Petrus J.; Alberts, Antonie C.; du Plessis, Monuko; Joubert, Trudi-Heleen; Goosen, Marius E.; Janse van Rensburg, Christo; Rademeyer, Pieter; Fauré, Nicolaas M.

    2013-03-01

    Microdisplay technology, the miniaturization and integration of small displays for various applications, is predominantly based on OLED and LCoS technologies. Silicon light emission from hot carrier electroluminescence has been shown to emit light visibly perceptible without the aid of any additional intensification, although the electrical to optical conversion efficiency is not as high as the technologies mentioned above. For some applications, this drawback may be traded off against the major cost advantage and superior integration opportunities offered by CMOS microdisplays using integrated silicon light sources. This work introduces an improved version of our previously published microdisplay by making use of new efficiency enhanced CMOS light emitting structures and an increased display resolution. Silicon hot carrier luminescence is often created when reverse biased pn-junctions enter the breakdown regime where impact ionization results in carrier transport across the junction. Avalanche breakdown is typically unwanted in modern CMOS processes. Design rules and process design are generally tailored to prevent breakdown, while the voltages associated with breakdown are too high to directly interact with the rest of the CMOS standard library. This work shows that it is possible to lower the operating voltage of CMOS light sources without compromising the optical output power. This results in more efficient light sources with improved interaction with other standard library components. This work proves that it is possible to create a reasonably high resolution microdisplay while integrating the active matrix controller and drivers on the same integrated circuit die without additional modifications, in a standard CMOS process.

  7. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    International Nuclear Information System (INIS)

    Yin, Lan; Harburg, Daniel V.; Rogers, John A.; Bozler, Carl; Omenetto, Fiorenzo

    2015-01-01

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems

  8. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Lan; Harburg, Daniel V.; Rogers, John A., E-mail: jrogers@illinois.edu [Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S Goodwin Ave., Urbana, Illinois 61801 (United States); Bozler, Carl [Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420 (United States); Omenetto, Fiorenzo [Department of Biomedical Engineering, Department of Physics, Tufts University, 4 Colby St., Medford, Massachusetts 02155 (United States)

    2015-01-05

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

  9. Single- and double- lumen silicone breast implant integrity: prospective evaluation of MR and US criteria.

    Science.gov (United States)

    Berg, W A; Caskey, C I; Hamper, U M; Kuhlman, J E; Anderson, N D; Chang, B W; Sheth, S; Zerhouni, E A

    1995-10-01

    To evaluate the accuracy of magnetic resonance (MR) and ultrasound (US) criteria for breast implant integrity. One hundred twenty-two single-lumen silicone breast implants and 22 bilumen implants were evaluated with surface coil MR imaging and US and surgically removed. MR criteria for implant failure were a collapsed implant shell ("linguine sign"), foci of silicone outside the shell ("noose sign"), and extracapsular gel, US criteria were collapsed shell, low-level echoes within the gel, and "snowstorm" echoes of extracapsular silicone. Among single-lumen implants, MR imaging depicted 39 of 40 ruptures, 14 of 28 with minimal leakage; 49 of 54 intact implants were correctly interpreted. US depicted 26 of 40 ruptured implants, four of 28 with minimal leakage, and 30 of 54 intact implants. Among bilumen implants, MR imaging depicted four of five implants with rupture of both lumina and nine of 10 as intact; US depicted one rupture and helped identify two of 10 as intact. Mammography accurately depicted the status of 29 of 30 bilumen implants with MR imaging correlation. MR imaging depicts implant integrity more accurately than US; neither method reliably depicts minimal leakage with shell collapse. Mammography is useful in screening bilumen implant integrity.

  10. Development of a Surface Micromachined On-Chip Flat Disk Micropump

    Directory of Open Access Journals (Sweden)

    M. I. KILANI

    2009-08-01

    Full Text Available The paper presents research progress in the development of a surface micromachined flat disk micropump which employs the viscous and centrifugal effects acting on a layer of fluid sandwiched between a rotating flat disk and a stationary plate. The pump is fabricated monolithically on-chip using Sandia’s Ultraplanar Multilevel MEMS Technology (SUMMiT™ where an electrostatic comb-drive Torsional Ratcheting Actuator (TRA drives the flat disk through a geared transmission. The paper reviews available analytical models for flow geometries similar to that of the described pump, and presents a set of experiments which depict its performance and possible failure modes. Those experiments highlight future research directions in the development of electrostatically-actuated, CMOS-compatible, surface micromachined pumps.

  11. Realization of an integrated VDF/TrFE copolymer-on-silicon pyroelectric sensor

    NARCIS (Netherlands)

    Setiadi, D.; Setiadi, D.; Regtien, Paulus P.L.; Sarro, P.M.

    1995-01-01

    An integrated pyroelectric sensor based on a vinylidene fluoride trifluoroethylene (VDF/TrFE) copolymer is presented. A silicon substrate that contains FET readout electronics is coated with the VDF/TrFE copolymer film using a spin-coating technique. On-chip poling of the copolymer has been applied

  12. Sub-band-gap laser micromachining of lithium niobate

    DEFF Research Database (Denmark)

    Christensen, F. K.; Müllenborn, Matthias

    1995-01-01

    method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106µm3/s. This enables fast micromachining of small piezoelectric...

  13. Fabrication process for CMUT arrays with polysilicon electrodes, nanometre precision cavity gaps and through-silicon vias

    International Nuclear Information System (INIS)

    Due-Hansen, J; Poppe, E; Summanwar, A; Jensen, G U; Breivik, L; Wang, D T; Schjølberg-Henriksen, K; Midtbø, K

    2012-01-01

    Capacitive micromachined ultrasound transducers (CMUTs) can be used to realize miniature ultrasound probes. Through-silicon vias (TSVs) allow for close integration of the CMUT and read-out electronics. A fabrication process enabling the realization of a CMUT array with TSVs is being developed. The integrated process requires the formation of highly doped polysilicon electrodes with low surface roughness. A process for polysilicon film deposition, doping, CMP, RIE and thermal annealing that resulted in a film with sheet resistance of 4.0 Ω/□ and a surface roughness of 1 nm rms has been developed. The surface roughness of the polysilicon film was found to increase with higher phosphorus concentrations. The surface roughness also increased when oxygen was present in the thermal annealing ambient. The RIE process for etching CMUT cavities in the doped polysilicon gave a mean etch depth of 59.2 ± 3.9 nm and a uniformity across the wafer ranging from 1.0 to 4.7%. The two presented processes are key processes that enable the fabrication of CMUT arrays suitable for applications in for instance intravascular cardiology and gastrointestinal imaging. (paper)

  14. Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

    Energy Technology Data Exchange (ETDEWEB)

    Dang, Z. Y.; Breese, M. B. H. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore Singapore 117542 (Singapore); Lin, Y.; Tok, E. S. [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Vittone, E. [Physics Department, NIS Excellence Centre and CNISM, University of Torino, via Pietro Giuria 1, 10125 Torino (Italy)

    2014-05-12

    A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

  15. A 850 GHz SIS receiver employing silicon micro-machining technology

    Science.gov (United States)

    Kooi, J. W.; Pety, J.; Schaffer, P. L.; Phillips, T. G.; Bumble, B.; LeDuc, H. G.; Walker, C. K.

    1996-01-01

    A 850 GHz superconductor-insulator-superconductor (SIS) heterodyne receiver which uses a radiofrequency tuned niobium tunnel junction fabricated on a 1 micron thick silicon nitrate membrane, is reported. From video and heterodyne measurements, it was calculated that the niobium film loss in the radiofrequency matching network is about 6.8 dB at 822 GHz. These results are approximately a factor of two higher than the theoretical loss predicted by the Mattis-Bardeen theory in the extreme anomalous limit. The junction design and the receiver configuration are described, including the mixer block, the membrane construction and the cooled optics. The performance tests using a Fourier transform spectrometer to measure the response of the radiofrequency matching network, and the SIS simulations of the receiver response to cold and hot loads, the infrared noise contribution and the overall mixer conversion efficiency, are reported. It is concluded that the receiver response is limited by the absorption loss in the radiofrequency matching network.

  16. Development of an SU-8 MEMS process with two metal electrodes using amorphous silicon as a sacrificial material

    KAUST Repository

    Ramadan, Khaled S.

    2013-02-08

    This work presents an SU-8 surface micromachining process using amorphous silicon as a sacrificial material, which also incorporates two metal layers for electrical excitation. SU-8 is a photo-patternable polymer that is used as a structural layer for MEMS and microfluidic applications due to its mechanical properties, biocompatibility and low cost. Amorphous silicon is used as a sacrificial layer in MEMS applications because it can be deposited in large thicknesses, and can be released in a dry method using XeF2, which alleviates release-based stiction problems related to MEMS applications. In this work, an SU-8 MEMS process was developed using ;-Si as a sacrificial layer. Two conductive metal electrodes were integrated in this process to allow out-of-plane electrostatic actuation for applications like MEMS switches and variable capacitors. In order to facilitate more flexibility for MEMS designers, the process can fabricate dimples that can be conductive or nonconductive. Additionally, this SU-8 process can fabricate SU-8 MEMS structures of a single layer of two different thicknesses. Process parameters were optimized for two sets of thicknesses: thin (5-10 m) and thick (130 m). The process was tested fabricating MEMS switches, capacitors and thermal actuators. © 2013 IOP Publishing Ltd.

  17. Review: Semiconductor Piezoresistance for Microsystems.

    Science.gov (United States)

    Barlian, A Alvin; Park, Woo-Tae; Mallon, Joseph R; Rastegar, Ali J; Pruitt, Beth L

    2009-01-01

    Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). The effect of stress on doped silicon and germanium has been known since the work of Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported on microscale, piezoresistive strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors, including many commercially successful devices. In this paper, we review the history of piezoresistance, its physics and related fabrication techniques. We also discuss electrical noise in piezoresistors, device examples and design considerations, and alternative materials. This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.

  18. Micromachined Parts Advance Medicine, Astrophysics, and More

    Science.gov (United States)

    2015-01-01

    In the mid-1990s, Marshall Space Flight Center awarded two SBIR contracts to Potomac Photonics, now based in Baltimore, for the development of computerized workstations capable of mass-producing tiny, intricate, diffractive optical elements. While the company has since discontinued the workstations, those contracts set the stage for Potomac Photonics to be a leader in the micromachining industry, where NASA remains one of its clients.

  19. 2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits.

    Science.gov (United States)

    Wang, Ruijun; Sprengel, Stephan; Muneeb, Muhammad; Boehm, Gerhard; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

    2015-10-05

    The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform.

  20. Compact polarization beam splitter for silicon photonic integrated circuits with a 340-nm-thick silicon core layer.

    Science.gov (United States)

    Li, Chenlei; Dai, Daoxin

    2017-11-01

    A polarization beam splitter (PBS) is proposed and realized for silicon photonic integrated circuits with a 340-nm-thick silicon core layer by introducing an asymmetric directional coupler (ADC), which consists of a silicon-on-insulator (SOI) nanowire and a subwavelength grating (SWG) waveguide. The SWG is introduced to provide an optical waveguide which has much higher birefringence than a regular 340-nm-thick SOI nanowire, so that it is possible to make the phase-matching condition satisfied for TE polarization only in the present design when the waveguide dimensions are optimized. Meanwhile, there is a significant phase mismatching for TM polarization automatically. In this way, the present ADC enables strong polarization selectivity to realize a PBS that separates TE and TM polarizations to the cross and through ports, respectively. The realized PBS has a length of ∼2  μm for the coupling region. For the fabricated PBS, the extinction ratio (ER) is 15-30 dB and the excess loss is 0.2-2.6 dB for TE polarization while the ER is 20-27 dB and the excess loss is 0.3-2.8 dB for TM polarization when operating in the wavelength range of 1520-1580 nm.

  1. Development of a focused ion beam micromachining system

    Energy Technology Data Exchange (ETDEWEB)

    Pellerin, J.G.; Griffis, D.; Russell, P.E.

    1988-12-01

    Focused ion beams are currently being investigated for many submicron fabrication and analytical purposes. An FIB micromachining system consisting of a UHV vacuum system, a liquid metal ion gun, and a control and data acquisition computer has been constructed. This system is being used to develop nanofabrication and nanomachining techniques involving focused ion beams and scanning tunneling microscopes.

  2. Design and Fabrication of Piezoresistive Based Encapsulated Poly-Si Cantilevers for Bio/chemical Sensing

    Science.gov (United States)

    Krishna, N. P. Vamsi; Murthy, T. R. Srinivasa; Reddy, K. Jayaprakash; Sangeeth, K.; Hegde, G. M.

    Cantilever-based sensing is a growing research field not only within micro regime but also in nano technology. The technology offers a method for rapid, on-line and in-situ monitoring of specific bio/chemical substances by detecting the nanomechanical responses of a cantilever sensor. Cantilever with piezoresistive based detection scheme is more attractive because of its electronics compatibility. Majority of commercially available micromachined piezoresistive sensors are bulk micromachined devices and are fabricated using single crystal silicon wafers. As substrate properties are not important in surface micromachining, the expensive silicon wafers can be replaced by cheaper substrates, such as poly-silicon, glass or plastic. Here we have designed SU-8 based bio/chemical compatible micro electro mechanical device that includes an encapsulated polysilicon piezoresistor for bio/chemical sensing. In this paper we report the design, fabrication and analysis of the encapsulated poly-Si cantilevers. Design and theoretical analysis are carried out using Finite Element Analysis software. For fabrication of poly-silicon piezoresistive cantilevers we followed the surface micromachining process steps. Preliminary characterization of the cantilevers is presented.

  3. Design and fabrication process of silicon micro-calorimeters on simple SOI technology for X-ray spectral imaging

    International Nuclear Information System (INIS)

    Aliane, A.; Agnese, P.; Pigot, C.; Sauvageot, J.-L.; Moro, F. de; Ribot, H.; Gasse, A.; Szeflinski, V.; Gobil, Y.

    2008-01-01

    Several successful development programs have been conducted on infra-red bolometer arrays at the 'Commissariat a l'Energie Atomique' (CEA-LETI Grenoble) in collaboration with the CEA-SAp (Saclay); taking advantage of this background, we are now developing an X-ray spectro-imaging camera for next generation space astronomy missions, using silicon only technology. We have developed monolithic silicon micro-calorimeters based on implanted thermistors in an improved array that could be used for future space missions. The 8x8 array consists of a grid of 64 suspended pixels fabricated on a silicon on insulator (SOI) wafer. Each pixel of this detector array is made of a tantalum (Ta) absorber, which is bound by means of indium bump hybridization, to a silicon thermistor. The absorber array is bound to the thermistor array in a collective process. The fabrication process of our detector involves a combination of standard technologies and silicon bulk micro-machining techniques, based on deposition, photolithography and plasma etching steps. Finally, we present the results of measurements performed on these four primary building blocks that are required to create a detector array up to 32x32 pixels in size

  4. Condensation of sodium on a micromachined surface for AMTEC

    International Nuclear Information System (INIS)

    Crowley, C.J.; Izenson, M.G.

    1993-01-01

    A novel condenser component is being developed to enable Alkali Metal Thermal to Electric Conversion (AMTEC) technology to achieve two critical goals: (1) optimization of conversion efficiency and (2) microgravity fluid management. The first goal is achieved by minimizing parasitic radiation heat transfer losses for condensers with a large view factor to the high-temperature β double-prime-alumina surface. The condenser geometry includes a specially designed, micromachined surface where large capillary forces are used to manage the fluid distribution to accomplish the second goal. We present and discuss the results of separate effects experiments investigating the wetting and condensation behavior of sodium on this capillary surface. Test results show that the micromachined surface maintains a smooth, high reflective film of liquid sodium on the surface, which implies reduced parasitic losses and increased conversion efficiencies in AMTEC cells. Accomplishing this in an adverse gravity gradient demonstrates the potential for management of the fluid even under spacecraft acceleration conditions

  5. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  6. Integrated investigation approach for determining mechanical properties of poly-silicon membranes

    OpenAIRE

    Brueckner, J.; Dehe, A.; Auerswald, E.; Dudek, R.; Michel, B.; Rzepka, S.

    2014-01-01

    A methodology is presented for determining mechanical properties of free-standing thin films such as poly-silicon membranes. The integrated investigation approach comprises test structure development, mechanical testing, and numerical simulation. All membrane test structures developed and manufactured consist of the same material but have different stiffness due to variations in the geometric design. The mechanical tests apply microscopic loads utilizing a nanoindentation tool. Young's modulu...

  7. Micromachined two dimensional resistor arrays for determination of gas parameters

    NARCIS (Netherlands)

    van Baar, J.J.J.; Verwey, Willem B.; Dijkstra, Mindert; Dijkstra, Marcel; Wiegerink, Remco J.; Lammerink, Theodorus S.J.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt

    A resistive sensor array is presented for two dimensional temperature distribution measurements in a micromachined flow channel. This allows simultaneous measurement of flow velocity and fluid parameters, like thermal conductivity, diffusion coefficient and viscosity. More general advantages of

  8. Nanophotonic integrated circuits from nanoresonators grown on silicon.

    Science.gov (United States)

    Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D; Li, Kun; Chang-Hasnain, Connie

    2014-07-07

    Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

  9. Modelling of micromachining of human tooth enamel by erbium laser radiation

    Energy Technology Data Exchange (ETDEWEB)

    Belikov, A V; Skrypnik, A V; Shatilova, K V [St. Petersburg National Research University of Information Technologies, Mechanics and Optics, St. Petersburg (Russian Federation)

    2014-08-31

    We consider a 3D cellular model of human tooth enamel and a photomechanical cellular model of enamel ablation by erbium laser radiation, taking into account the structural peculiarities of enamel, energy distribution in the laser beam cross section and attenuation of laser energy in biological tissue. The surface area of the texture in enamel is calculated after its micromachining by erbium laser radiation. The influence of the surface area on the bond strength of enamel with dental filling materials is discussed. A good correlation between the computer simulation of the total work of adhesion and experimentally measured bond strength between the dental filling material and the tooth enamel after its micromachining by means of YAG : Er laser radiation is attained. (laser biophotonics)

  10. Modelling of micromachining of human tooth enamel by erbium laser radiation

    International Nuclear Information System (INIS)

    Belikov, A V; Skrypnik, A V; Shatilova, K V

    2014-01-01

    We consider a 3D cellular model of human tooth enamel and a photomechanical cellular model of enamel ablation by erbium laser radiation, taking into account the structural peculiarities of enamel, energy distribution in the laser beam cross section and attenuation of laser energy in biological tissue. The surface area of the texture in enamel is calculated after its micromachining by erbium laser radiation. The influence of the surface area on the bond strength of enamel with dental filling materials is discussed. A good correlation between the computer simulation of the total work of adhesion and experimentally measured bond strength between the dental filling material and the tooth enamel after its micromachining by means of YAG : Er laser radiation is attained. (laser biophotonics)

  11. Femtosecond laser micro-machined polyimide films for cell scaffold applications

    DEFF Research Database (Denmark)

    Antanavičiute, Ieva; Šimatonis, Linas; Ulčinas, Orestas

    2018-01-01

    of commercially available 12.7 and 25.4μm thickness polyimide (PI) film was applied. Mechanical properties of the fabricated scaffolds, i.e. arrays of differently spaced holes, were examined via custom-built uniaxial micro-tensile testing and finite element method simulations. We demonstrate that experimental...... micro-tensile testing results could be numerically simulated and explained by two-material model, assuming that 2-6μm width rings around the holes possessed up to five times higher Young's modulus and yield stress compared with the rest of the laser intacted PI film areas of 'dog-bone'-shaped specimens......Engineering of sophisticated synthetic 3D scaffolds that allow controlling behaviour and location of the cells requires advanced micro/nano-fabrication techniques. Ultrafast laser micro-machining employing a 1030-nm wavelength Yb:KGW femtosecond laser and a micro-fabrication workstation for micro-machining...

  12. An in-pipe mobile micromachine using fluid power. A mechanism adaptable to pipe diameters

    International Nuclear Information System (INIS)

    Yoshida, Kazuhiro; Yokota, Shinichi; Takahashi, Ken

    2000-01-01

    To realize micro maintenance robots for small diameter pipes of nuclear reactors and so on, high power in-pipe mobile micromachines have been required. The authors have proposed the bellows microactuator using fluid power and have tried to apply the actuators to in-pipe mobile micromachines. In the previous papers, some inchworm mobile machine prototypes with 25 mm in diameter are fabricated and the traveling performances are experimentally investigated. In this paper, to miniaturize the in-pipe mobile machine and to make it adaptable to pipe diameters, firstly, a simple rubber-tube actuator constrained with a coil-spring is proposed and the static characteristics are investigated. Secondly, a supporting mechanism which utilizes a toggle mechanism and is adaptable to pipe diameters is proposed and the supporting forces are investigated. Finally, an in-pipe mobile micromachine for pipe with 4 - 5 mm in diameter is fabricated and the maximum traveling velocity of 7 mm/s in both ahead and astern movements is experimentally verified. (author)

  13. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  14. A novel prototyping method for die-level monolithic integration of MEMS above-IC

    International Nuclear Information System (INIS)

    Cicek, Paul-Vahe; Zhang, Qing; Saha, Tanmoy; Mahdavi, Sareh; Allidina, Karim; Gamal, Mourad El; Nabki, Frederic

    2013-01-01

    This work presents a convenient and versatile prototyping method for integrating surface-micromachined microelectromechanical systems (MEMS) directly above IC electronics, at the die level. Such localized implementation helps reduce development costs associated with the acquisition of full-sized semiconductor wafers. To demonstrate the validity of this method, variants of an IC-compatible surface-micromachining MEMS process are used to build different MEMS devices above a commercial transimpedance amplifier chip. Subsequent functional assessments for both the electronics and the MEMS indicate that the integration is successful, validating the prototyping methodology presented in this work, as well as the suitability of the selected MEMS technology for above-IC integration. (paper)

  15. Optically Driven Mobile Integrated Micro-Tools for a Lab-on-a-Chip

    Directory of Open Access Journals (Sweden)

    Yi-Jui Liu

    2013-04-01

    Full Text Available This study proposes an optically driven complex micromachine with an Archimedes microscrew as the mechanical power, a sphere as a coupler, and three knives as the mechanical tools. The micromachine is fabricated by two-photon polymerization and is portably driven by optical tweezers. Because the microscrew can be optically trapped and rotates spontaneously, it provides driving power for the complex micro-tools. In other words, when a laser beam focuses on the micromachine, the microscrew is trapped toward the focus point and simultaneously rotates. A demonstration showed that the integrated micromachines are grasped by the optical tweezers and rotated by the Archimedes screw. The rotation efficiencies of the microrotors with and without knives are 1.9 rpm/mW and 13.5 rpm/mW, respectively. The micromachine can also be portably dragged along planed routes. Such Archimedes screw-based optically driven complex mechanical micro-tools enable rotation similar to moving machines or mixers, which could contribute to applications for a biological microfluidic chip or a lab-on-a-chip.

  16. Single-crystal silicon trench etching for fabrication of highly integrated circuits

    Science.gov (United States)

    Engelhardt, Manfred

    1991-03-01

    The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

  17. A wafer mapping technique for residual stress in surface micromachined films

    International Nuclear Information System (INIS)

    Schiavone, G; Murray, J; Smith, S; Walton, A J; Desmulliez, M P Y; Mount, A R

    2016-01-01

    The design of MEMS devices employing movable structures is crucially dependant on the mechanical behaviour of the deposited materials. It is therefore important to be able to fully characterize the micromachined films and predict with confidence the mechanical properties of patterned structures. This paper presents a characterization technique that enables the residual stress in MEMS films to be mapped at the wafer level by using microstructures released by surface micromachining. These dedicated MEMS test structures and the associated measurement techniques are used to extract localized information on the strain and Young’s modulus of the film under investigation. The residual stress is then determined by numerically coupling this data with a finite element analysis of the structure. This paper illustrates the measurement routine and demonstrates it with a case study using electrochemically deposited alloys of nickel and iron, particularly prone to develop high levels of residual stress. The results show that the technique enables wafer mapping of film non-uniformities and identifies wafer-to-wafer differences. A comparison between the results obtained from the mapping technique and conventional wafer bow measurements highlights the benefits of using a procedure tailored to films that are non-uniform, patterned and surface-micromachined, as opposed to simple standard stress extraction methods. The presented technique reveals detailed information that is generally unexplored when using conventional stress extraction methods such as wafer bow measurements. (paper)

  18. A 16-bit sigma–delta modulator applied in micro-machined inertial sensors

    International Nuclear Information System (INIS)

    Xu Honglin; Fu Qiang; Liu Hongna; Yin Liang; Wang Pengfei; Liu Xiaowei

    2014-01-01

    A fourth-order low-distortion low-pass sigma–delta (ΣΔ) modulator is presented for micro-machined inertial sensors. The proposed single-loop single-bit feedback modulator is optimized with a feed-forward path to decrease the nonlinearities and power consumption. The IC is implemented in a standard 0.6 μm CMOS technology and operates at a sampling frequency of 3.846 MHz. The chip area is 2.12 mm 2 with 23 pads. The experimental results indicate a signal-to-noise ratio (SNR) of 100 dB and dynamic range (DR) of 103 dB at an oversampling rate (OSR) of 128 with the input signal amplitude of −3.88 dBFS at 9.8 kHz; the power consumption is 15 mW at a 5 V supply. (semiconductor integrated circuits)

  19. Characterization and modeling of 2D-glass micro-machining by spark-assisted chemical engraving (SACE) with constant velocity

    International Nuclear Information System (INIS)

    Didar, Tohid Fatanat; Dolatabadi, Ali; Wüthrich, Rolf

    2008-01-01

    Spark-assisted chemical engraving (SACE) is an unconventional micro-machining technology based on electrochemical discharge used for micro-machining nonconductive materials. SACE 2D micro-machining with constant speed was used to machine micro-channels in glass. Parameters affecting the quality and geometry of the micro-channels machined by SACE technology with constant velocity were presented and the effect of each of the parameters was assessed. The effect of chemical etching on the geometry of micro-channels under different machining conditions has been studied, and a model is proposed for characterization of the micro-channels as a function of machining voltage and applied speed

  20. Monitoring of yeast cell concentration using a micromachined impedance sensor

    NARCIS (Netherlands)

    Krommenhoek, E.E.; Gardeniers, Johannes G.E.; Bomer, Johan G.; van den Berg, Albert; Li, X.; Ottens, M.; van der Wielen, L.A.M.; van Dedem, G.W.K.; van Leeuwen, M.; van Gulik, W.M.; Heijnen, J.J.

    2005-01-01

    The paper describes the design, modelling and experimental characterization of a micromachined impedance sensor for on-line monitoring of the viable yeast cell concentration (biomass) in a miniaturized cell assay. Measurements in a Saccharomyces cerevisiae cell culture show that the permittivity of

  1. Fiscal 1993 report on technological results. R and D on micromachine technology; 1993 nendo micro machine gijutsu no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-12-01

    Researches on basic element technology of micromachines are conducted with the view of establishing a mechanical system constituted of minute functional elements that perform autonomous operations in a narrow small part of complicated equipment in a power station for example or in a living body. The areas of activity are 1. research on micro actuators and 2. research on basic technology of micromachine; 1 is classified into researches of (1) shape-memory actuator, (2) bending and stretching type actuator, and (3) integrated micro actuator, while 2 is classified into researches of (1) total system for medical diagnosis, (2) micro tactile sensing technology and laser applied diagnosis/treatment technology, and (3) blood pressure/blood circulation sensing technology. In 1-(1), a chemo-mechanical actuator was studied using a shape memory alloy (SMA) and a high polymer gel, and in 1-(2), an SMA and bimetal were employed as a source of the driving force. Further, examination was also made on a fluid driving type actuator. (NEDO)

  2. Laser micromachining of biofactory-on-a-chip devices

    Science.gov (United States)

    Burt, Julian P.; Goater, Andrew D.; Hayden, Christopher J.; Tame, John A.

    2002-06-01

    Excimer laser micromachining provides a flexible means for the manufacture and rapid prototyping of miniaturized systems such as Biofactory-on-a-Chip devices. Biofactories are miniaturized diagnostic devices capable of characterizing, manipulating, separating and sorting suspension of particles such as biological cells. Such systems operate by exploiting the electrical properties of microparticles and controlling particle movement in AC non- uniform stationary and moving electric fields. Applications of Biofactory devices are diverse and include, among others, the healthcare, pharmaceutical, chemical processing, environmental monitoring and food diagnostic markets. To achieve such characterization and separation, Biofactory devices employ laboratory-on-a-chip type components such as complex multilayer microelectrode arrays, microfluidic channels, manifold systems and on-chip detection systems. Here we discuss the manufacturing requirements of Biofactory devices and describe the use of different excimer laser micromachined methods both in stand-alone processes and also in conjunction with conventional fabrication processes such as photolithography and thermal molding. Particular attention is given to the production of large area multilayer microelectrode arrays and the manufacture of complex cross-section microfluidic channel systems for use in simple distribution and device interfacing.

  3. EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITS

    Directory of Open Access Journals (Sweden)

    S. A. Chizhik

    2013-01-01

    Full Text Available The advantages of using an atomic force microscopy in manufacturing of submicron integrated circuits are described. The possibilities of characterizing the surface morphology and the etching profile for silicon substrate and bus lines, estimation of the periodicity and size of bus lines, geometrical stability for elementary bus line are shown. Methods of optical and atomic force microcopies are combined in one diagnostic unit. Scanning  probe  microscope  (SPM  200  is  designed  and  produced.  Complex  SPM  200  realizes  nondestructive control of microelectronics elements made on silicon wafers up to 200 mm in diameter and it is introduced by JSC «Integral» for the purpose of operational control, metrology and acceptance of the final product.

  4. A bipolar analog front-end integrated circuit for the SDC silicon tracker

    International Nuclear Information System (INIS)

    Kipnis, I.; Spieler, H.; Collins, T.

    1993-11-01

    A low-noise, low-power, high-bandwidth, radiation hard, silicon bipolar-transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDC silicon tracker. The IC was designed and tested at LBL and was fabricated using AT ampersand T's CBIC-U2, 4 GHz f T complementary bipolar technology. Each channel contains the following functions: low-noise preamplification, pulse shaping and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 μm pitch double-sided silicon strip detector. The chip measures 6.8 mm x 3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. rms at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to 4 times the noise level, a 16 nsec time-walk for 1.25 to 10fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a Φ=10 14 protons/cm 2 have been performed on the IC, demonstrating the radiation hardness of the complementary bipolar process

  5. Scintillation light read-out by thin photodiodes in silicon wells

    CERN Document Server

    Allier, C P; Sarro, P M; Eijk, C W E

    2000-01-01

    Several applications of X-ray and gamma ray imaging detectors, e.g. in medical diagnostics, require millimeter or sub-millimeter spatial resolution and good energy resolution. In order to achieve such features we have proposed a new type of camera, which takes advantage of micromachining technology. It consists of an array of scintillator crystals encapsulated in silicon wells with photodiodes at the bottom. Several parameters of the photodiode need to be optimised: uniformity and efficiency of the light detection, gain, electronic noise and breakdown voltage. In order to evaluate these parameters we have processed 3x3 arrays of 1.8 mm sup 2 , approx 10 mu m thick photodiodes using (1 0 0) wafers etched in a KOH solution. Their optical response at 675 nm wavelength is comparable to that of a 500 mu m thick silicon PIN diode. Their low light detection efficiency is compensated by internal amplification. Several scintillator materials have been positioned in the wells on top of the thin photodiodes, i.e. a 200 ...

  6. Micromachined fiber optic Fabry-Perot underwater acoustic probe

    Science.gov (United States)

    Wang, Fuyin; Shao, Zhengzheng; Hu, Zhengliang; Luo, Hong; Xie, Jiehui; Hu, Yongming

    2014-08-01

    One of the most important branches in the development trend of the traditional fiber optic physical sensor is the miniaturization of sensor structure. Miniature fiber optic sensor can realize point measurement, and then to develop sensor networks to achieve quasi-distributed or distributed sensing as well as line measurement to area monitoring, which will greatly extend the application area of fiber optic sensors. The development of MEMS technology brings a light path to address the problems brought by the procedure of sensor miniaturization. Sensors manufactured by MEMS technology possess the advantages of small volume, light weight, easy fabricated and low cost. In this paper, a fiber optic extrinsic Fabry-Perot interferometric underwater acoustic probe utilizing micromachined diaphragm collaborated with fiber optic technology and MEMS technology has been designed and implemented to actualize underwater acoustic sensing. Diaphragm with central embossment, where the embossment is used to anti-hydrostatic pressure which would largely deflect the diaphragm that induce interferometric fringe fading, has been made by double-sided etching of silicon on insulator. By bonding the acoustic-sensitive diaphragm as well as a cleaved fiber end in ferrule with an outer sleeve, an extrinsic Fabry-Perot interferometer has been constructed. The sensor has been interrogated by quadrature-point control method and tested in field-stable acoustic standing wave tube. Results have been shown that the recovered signal detected by the sensor coincided well with the corresponding transmitted signal and the sensitivity response was flat in frequency range from 10 Hz to 2kHz with the value about -154.6 dB re. 1/μPa. It has been manifest that the designed sensor could be used as an underwater acoustic probe.

  7. Label-free silicon photonic biosensor system with integrated detector array

    Science.gov (United States)

    Yan, Rongjin; Mestas, Santano P.; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S.

    2010-01-01

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide’s upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip. PMID:19606292

  8. Label-free silicon photonic biosensor system with integrated detector array.

    Science.gov (United States)

    Yan, Rongjin; Mestas, Santano P; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S; Lear, Kevin L

    2009-08-07

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide's upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip.

  9. MIDAS: Automated Approach to Design Microwave Integrated Inductors and Transformers on Silicon

    Directory of Open Access Journals (Sweden)

    L. Aluigi

    2013-09-01

    Full Text Available The design of modern radiofrequency integrated circuits on silicon operating at microwave and millimeter-waves requires the integration of several spiral inductors and transformers that are not commonly available in the process design-kits of the technologies. In this work we present an auxiliary CAD tool for Microwave Inductor (and transformer Design Automation on Silicon (MIDAS that exploits commercial simulators and allows the implementation of an automatic design flow, including three-dimensional layout editing and electromagnetic simulations. In detail, MIDAS allows the designer to derive a preliminary sizing of the inductor (transformer on the bases of the design entries (specifications. It draws the inductor (transformer layers for the specific process design kit, including vias and underpasses, with or without patterned ground shield, and launches the electromagnetic simulations, achieving effective design automation with respect to the traditional design flow for RFICs. With the present software suite the complete design time is reduced significantly (typically 1 hour on a PC based on Intel® Pentium® Dual 1.80GHz CPU with 2-GB RAM. Afterwards both the device equivalent circuit and the layout are ready to be imported in the Cadence environment.

  10. A top-crossover-to-bottom addressed segmented annular array using piezoelectric micromachined ultrasonic transducers

    Science.gov (United States)

    Jung, Joontaek; Lee, Wonjun; Kang, Woojin; Hong, Hyeryung; Yuen Song, Hi; Oh, Inn-yeal; Park, Chul Soon; Choi, Hongsoo

    2015-11-01

    We design and fabricate segmented annular arrays (SAAs) using piezoelectric micromachined ultrasonic transducers (pMUTs) to demonstrate the feasibility of acoustic focusing of ultrasound. The fabricated SAAs have 25 concentric top-electrode signal lines and eight bottom-electrodes for grounding to enable electronic steering of selectively grouped ultrasonic transducers from 2393 pMUT elements. Each element in the array is connected by top-crossover-to-bottom metal bridges, which reduce the parasitic capacitance. Circular-shaped pMUT elements, 120 μm in diameter, are fabricated using 1 μm-thick sol-gel lead zirconate titanate on a silicon wafer. To utilize the high-density pMUT array, a deep reactive ion etching process is used for anisotropic silicon etching to realize the transducer membranes. The resonant frequency and effective coupling coefficient of the elements, measured with an impedance analyzer, yields 1.517 MHz and 1.29%, respectively, in air. The SAAs using pMUTs are packaged on a printed circuit board and coated with parylene C for acoustic intensity measurements in water. The ultrasound generated by each segmented array is focused on a selected point in space. When a 5 Vpp, 1.5 MHz square wave is applied, the maximum spatial peak temporal average intensity ({{I}\\text{spta}} ) is found to be 79 mW cm-2 5 mm from the SAAs’ surface without beamforming. The beam widths (-3 dB) of ultrasonic radiation patterns in the elevation and azimuth directions are recorded as 3 and 3.4 mm, respectively. The results successfully show the feasibility of focusing ultrasound on a small area with SAAs using pMUTs.

  11. Subwavelength silicon photonics

    International Nuclear Information System (INIS)

    Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

    2011-01-01

    With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

  12. A low cost and hybrid technology for integrating silicon sensors or actuators in polymer microfluidic systems

    International Nuclear Information System (INIS)

    Charlot, Samuel; Gué, Anne-Marie; Tasselli, Josiane; Marty, Antoine; Abgrall, Patrick; Estève, Daniel

    2008-01-01

    This paper describes a new technology permitting a hybrid integration of silicon chips in polymer (PDMS and SU8) microfluidic structures. This two-step technology starts with transferring the silicon device onto a rigid substrate (typically PCB) and planarizing it, and then it proceeds with stacking of the polymer-made fluidic network onto the device. The technology is low cost, based on screen printing and lamination, can be applied to treat large surface areas, and is compatible with standard photolithography and vacuum based approaches. We show, as an example, the integration of a thermal sensor inside channels made of PDMS or SU8. The developed structures had no fluid leaks at the Si/polymer interfaces and the electrical circuit was perfectly tightproof. (note)

  13. Invited Article: Electrically tunable silicon-based on-chip microdisk resonator for integrated microwave photonic applications

    Directory of Open Access Journals (Sweden)

    Weifeng Zhang

    2016-11-01

    Full Text Available Silicon photonics with advantages of small footprint, compatibility with the mature CMOS fabrication technology, and its potential for seamless integration with electronics is making a significant difference in realizing on-chip integration of photonic systems. A microdisk resonator (MDR with a strong capacity in trapping and storing photons is a versatile element in photonic integrated circuits. Thanks to the large index contrast, a silicon-based MDR with an ultra-compact footprint has a great potential for large-scale and high-density integrations. However, the existence of multiple whispering gallery modes (WGMs and resonance splitting in an MDR imposes inherent limitations on its widespread applications. In addition, the waveguide structure of an MDR is incompatible with that of a lateral PN junction, which leads to the deprivation of its electrical tunability. To circumvent these limitations, in this paper we propose a novel design of a silicon-based MDR by introducing a specifically designed slab waveguide to surround the disk and the lateral sides of the bus waveguide to suppress higher-order WGMs and to support the incorporation of a lateral PN junction for electrical tunability. An MDR based on the proposed design is fabricated and its optical performance is evaluated. The fabricated MDR exhibits single-mode operation with a free spectral range of 28.85 nm. Its electrical tunability is also demonstrated and an electro-optic frequency response with a 3-dB modulation bandwidth of ∼30.5 GHz is measured. The use of the fabricated MDR for the implementation of an electrically tunable optical delay-line and a tunable fractional-order temporal photonic differentiator is demonstrated.

  14. Optofluidic Microlasers based on Femtosecond Micromachining Technology

    Directory of Open Access Journals (Sweden)

    Simoni F.

    2017-08-01

    Full Text Available We present the different optofluidic lasers which have been realized using the Femtosecond Micromachining technique to fabricate the monolithic optofluidic structures in glass chips. We show how the great flexibility of this 3D technique allows getting different kind of optical cavities. The most recent devices fabricated by this technique as ring shaped and Fabry-Perot resonators show excellent emission performances.We also point out how the addition of the inkjet printing technique provides further opportunities in realizing optofluidic chips.

  15. Micromachined Si channel width and tortuosity on human osteoblast cell attachment and proliferation

    International Nuclear Information System (INIS)

    Leber, Christopher; Choi, Hongsoo; Bose, Susmita; Bandyopadhyay, Amit

    2010-01-01

    In this study, influence of coating chemistry, channel width and tortuosity of various two-dimensional micro-channels were explored on micromachined Si using osteoblast precursor cells line 1 (OPC1). The rationale for our study is to delineate the influence of different porosity parameters on bone cell attachment and proliferation in vitro. Channel widths of 100, 200, 300, 400, and 600 μm; channel bends of 0, 1, and 2 right angles; and gold and silicon dioxide coatings on single-crystal Si were studied. Experiments were conducted with channel tops under glass covered and uncovered conditions keeping the channel depth at 220 μm. Independent samples were evaluated using SEM imaging and MTT assay to measure bone cell morphology and quantity. Images were taken of micro-channels and exterior chambers at 50x, 500x, 1000x, and 5000x magnifications. Channel and chamber cell densities were scored as follows: bare (score = 0), scattered (1), limited (2), abundant (3), and overflowing (4). Samples were then scored and statistically analyzed for major differences. In general, OPC1 cells proliferated at least 5% or better based on cell numbers under uncovered conditions than glass covered. Channel widths of 100 μm largely prohibited cell proliferation and diffusion by narrow path inhibition with the lowest average score of 1.17. Among channel bends of 0, 1, and 2 right angles, an increase in micro-channel tortuosity from 0-2 bends amplified OPC1 cell growth upwards of ∼ 6.6%. A one-way ANOVA showed significant differences in cell quantity for alternating channel tortuosity at a significance level of p < 0.05. No preference was found for gold or silicon dioxide coatings on Si for bone cell proliferation.

  16. An improved PIN photodetector with integrated JFET on high-resistivity silicon

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Piemonte, Claudio; Boscardin, Maurizio; Gregori, Paolo; Zorzi, Nicola; Fazzi, Alberto; Pignatel, Giorgio U.

    2006-01-01

    We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed

  17. A manufacturing method for multi-layer polysilicon surface-micromachining technology

    Energy Technology Data Exchange (ETDEWEB)

    Sniegowski, J.J.; Rodgers, M.S.

    1998-01-01

    An advanced manufacturing technology which provides multi-layered polysilicon surface micromachining technology for advanced weapon systems is presented. Specifically, the addition of another design layer to a 4 levels process to create a 5 levels process allows consideration of fundamentally new architecture in designs for weapon advanced surety components.

  18. Quantitative measurements of C-reactive protein using silicon nanowire arrays

    Directory of Open Access Journals (Sweden)

    Min-Ho Lee

    2008-03-01

    Full Text Available Min-Ho Lee, Kuk-Nyung Lee, Suk-Won Jung, Won-Hyo Kim, Kyu-Sik Shin, Woo-Kyeong SeongKorea Electronics Technology Institute, Gyeonggi, KoreaAbstract: A silicon nanowire-based sensor for biological application showed highly desirable electrical responses to either pH changes or receptor-ligand interactions such as protein disease markers, viruses, and DNA hybridization. Furthermore, because the silicon nanowire can display results in real-time, it may possess superior characteristics for biosensing than those demonstrated in previously studied methods. However, despite its promising potential and advantages, certain process-related limitations of the device, due to its size and material characteristics, need to be addressed. In this article, we suggest possible solutions. We fabricated silicon nanowire using a top-down and low cost micromachining method, and evaluate the sensing of molecules after transfer and surface modifications. Our newly designed method can be used to attach highly ordered nanowires to various substrates, to form a nanowire array device, which needs to follow a series of repetitive steps in conventional fabrication technology based on a vapor-liquid-solid (VLS method. For evaluation, we demonstrated that our newly fabricated silicon nanowire arrays could detect pH changes as well as streptavidin-biotin binding events. As well as the initial proof-of-principle studies, C-reactive protein binding was measured: electrical signals were changed in a linear fashion with the concentration (1 fM to 1 nM in PBS containing 1.37 mM of salts. Finally, to address the effects of Debye length, silicon nanowires coupled with antigen proteins underwent electrical signal changes as the salt concentration changed.Keywords: silicon nanowire array, C-reactive protein, vapor-liquid-solid method

  19. Femtosecond laser micromachining of compound parabolic concentrator fiber tipped glucose sensors

    DEFF Research Database (Denmark)

    Hassan, Hafeez Ul; Lacraz, Amédée; Kalli, Kyriacos

    2017-01-01

    We report on highly accurate femtosecond (fs) laser micromachining of a compound parabolic concentrator (CPC) fiber tip on a polymer optical fiber (POF). The accuracy is reflected in an unprecedented correspondence between the numerically predicted and experimentally found improvement in fluoresc...

  20. Optical micro-metrology of structured surfaces micro-machined by jet-ECM

    DEFF Research Database (Denmark)

    Quagliotti, Danilo; Tosello, Guido; Islam, Aminul

    2015-01-01

    A procedure for statistical analysis and uncertainty evaluation is presented with regards to measurements of step height and surface texture. Measurements have been performed with a focus-variation microscope over jet electrochemical micro-machined surfaces. Traceability has been achieved using a...

  1. Direct writing of microtunnels using proton beam micromachining

    International Nuclear Information System (INIS)

    Marot, Laurent; Munnik, Frans; Mikhailov, Serguei

    2006-01-01

    The production of high aspect ratio microstructures is a potential growth area. The combination of deep X-ray lithography with electroforming and micromolding (i.e. LIGA) is one of the main techniques used to produce 3D microstructures. The new technique of proton micromachining employs focused MeV protons in a direct write process which is complementary to LIGA. During ion exposure of positive photoresist like PMMA, scission of molecular chains occurs. These degraded polymer chains are removed by the developer. The aim of this paper is to investigate the capabilities of proton micromachining as a lithographic technique. We show the realization of sub-surface channels, or microtunnels, which have been fabricated in only one exposure and without cutting or resurfacing the material. Using our Van-de-Graaff accelerator, the resist (PMMA) has been exposed with high-energy protons (2.5 MeV). The range of charged particles in matter is well-defined and depends on the energy. Therefore, it is possible to obtain a dose which is sufficient to develop the bottom part of the ion paths but not the top part. Thus, by selecting the energy and the exposure time, a big variety of microtunnels can be realized

  2. Generation and manipulation of entangled photons on silicon chips

    Directory of Open Access Journals (Sweden)

    Matsuda Nobuyuki

    2016-08-01

    Full Text Available Integrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.

  3. Integrated Circuit Interconnect Lines on Lossy Silicon Substrate with Finite Element Method

    OpenAIRE

    Sarhan M. Musa,; Matthew N. O. Sadiku

    2014-01-01

    The silicon substrate has a significant effect on the inductance parameter of a lossy interconnect line on integrated circuit. It is essential to take this into account in determining the transmission line electrical parameters. In this paper, a new quasi-TEM capacitance and inductance analysis of multiconductor multilayer interconnects is successfully demonstrated using finite element method (FEM). We specifically illustrate the electrostatic modeling of single and coupled in...

  4. Electron beam irradiation of porous silicon for application in micromachining and sensing

    International Nuclear Information System (INIS)

    Borini, S.; Rocchia, M.; Rossi, A.M.; Boarino, L.; Amato, G.

    2005-01-01

    We have studied the effect of the electron beam (EB) irradiation on porous silicon (PS), in order to find new possibilities for the local modification of the material at the submicrometer scale. The interaction between the accelerated electrons and PS has been investigated by means of two main techniques: infrared spectroscopy and profilometric measurements. All the results show that a strong increase of reactivity is induced on PS surface under exposure to the EB, due to the hydrogen desorption provoked by the incident electrons. We demonstrate that this phenomenon can be exploited for both the lateral structuring and the local functionalization of PS, at the submicrometer scale, depending on the different treatments applied to the samples after the EB bombardment. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Micro direct methanol fuel cell with perforated silicon-plate integrated ionomer membrane

    DEFF Research Database (Denmark)

    Larsen, Jackie Vincent; Dalslet, Bjarke Thomas; Johansson, Anne-Charlotte Elisabeth Birgitta

    2014-01-01

    This article describes the fabrication and characterization of a silicon based micro direct methanol fuel cell using a Nafion ionomer membrane integrated into a perforated silicon plate. The focus of this work is to provide a platform for micro- and nanostructuring of a combined current collector...... at a perforation ratio of 40.3%. The presented fuel cells also show a high volumetric peak power density of 2 mW cm−3 in light of the small system volume of 480 μL, while being fully self contained and passively feed....... and catalytic electrode. AC impedance spectroscopy is utilized alongside IV characterization to determine the influence of the plate perforation geometries on the cell performance. It is found that higher ratios of perforation increases peak power density, with the highest achieved being 2.5 mW cm−2...

  6. Sub 100 nm proton beam micromachining: theoretical calculations on resolution limits

    International Nuclear Information System (INIS)

    Kan, J.A. van; Sum, T.C.; Osipowicz, T.; Watt, F.

    2000-01-01

    Proton beam micromachining is a novel direct-write process for the production of three-dimensional (3D) microstructures. A focused beam of MeV protons is scanned in a pre-determined pattern over a suitable resist material (e.g. PMMA or SU-8) and the latent image formed is subsequently developed chemically. In this paper calculations on theoretical resolution limits of proton beam micromachined three-dimensional microstructures are presented. Neglecting the finite beam size, a Monte Carlo ion transport code was used in combination with a theoretical model describing the delta-ray (δ-ray) energy deposition to determine the lateral energy deposition distribution in PMMA resist material. The energy deposition distribution of ion induced secondary electrons (δ-rays) has been parameterized using analytical models. It is assumed that the attainable resolution is limited by a convolution of the spread of the ion beam and energy deposition of the δ-rays

  7. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi; Wang, Qingxiao; Yue, Weisheng; Guo, Zaibing; LI, LIANG; Zhao, Chao; Wang, Xianbin; Abutaha, Anas I.; Alshareef, Husam N.; Zhang, Yafei; Zhang, Xixiang

    2014-01-01

    Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. This journal is © the Partner Organisations 2014.

  8. Symposium Gyro Technology 1997

    Energy Technology Data Exchange (ETDEWEB)

    Sorg, H [ed.; Stuttgart Univ. (Germany). Inst. A fuer Mechanik

    1997-10-01

    This volume includes the twenty papers which were presented at the Symposium Gyro Technology 1997. The subjects that have been treated during the symposium were as follows: Performance and design of silicon micromachined gyro; improved rate gyroscope designs designated for fabrication by modern deep silicon etching; micromechanical vibratory rate gyroscopes fabricated in conventional CMOS; error modelling of silicon angular rate sensor; a capacitive accelerometer as an example for surface micromachined inertial sensors; initial production results of a new family of fiber optic gyroscopes; dual-axis multiplexed open loop fiber optic gyroscope; flattely supported vibratory gyro-sensor using a Trident-type tuning fork resonator; innovative mechanizations to optimize inertial sensors for high or low rate operations; design of a planar vibratory gyroscope using electrostatic actuation and electromanetic detection; fiber optic gyro based land navigation system; FOG AHRS and AHRS/GPS navigation system: the low cost solution; GPS/GLONASS/INS-navigation (GLOGINAV); small-sized integrated system of the sea mobile objects attitude and navigation; concepts for hybrid positioning; preliminary results from a large ring laser gyroscope for fundamental physics and geophysics; a `sense of balance` - AHRS with low-cost vibrating-gyroscopes for medical diagnostics; application of strapdown inertial systems of orientation and navigation in intrapipe moving diagnostic apparatus; investigation of a digital readout system for laser gyro; the use of angular rate multiple integrals as input signals for strapdown attitude algorithms. (AKF)

  9. Silicon-Based Integration of Groups III, IV, V Chemical Vapor Depositions in High-Quality Photodiodes

    NARCIS (Netherlands)

    Sammak, A.

    2012-01-01

    Heterogeneous integration of III-V semiconductors with silicon (Si) technology is an interesting approach to utilize the advantages of both high-speed photonic and electronic properties. The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with

  10. Acceleration sensitivity of micromachined pressure sensors

    Science.gov (United States)

    August, Richard; Maudie, Theresa; Miller, Todd F.; Thompson, Erik

    1999-08-01

    Pressure sensors serve a variety of automotive applications, some which may experience high levels of acceleration such as tire pressure monitoring. To design pressure sensors for high acceleration environments it is important to understand their sensitivity to acceleration especially if thick encapsulation layers are used to isolate the device from the hostile environment in which they reside. This paper describes a modeling approach to determine their sensitivity to acceleration that is very general and is applicable to different device designs and configurations. It also describes the results of device testing of a capacitive surface micromachined pressure sensor at constant acceleration levels from 500 to 2000 g's.

  11. A monolithically integrated detector-preamplifier on high-resistivity silicon

    International Nuclear Information System (INIS)

    Holland, S.; Spieler, H.

    1990-02-01

    A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white noise regime. Measurements with an Am 241 radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm 2 detector with on-chip amplifier in an experimental setup with substantial external pickup

  12. Development and miniaturization of a photoacoustic silicon integrated spectrometer for trace gas analysis; Etude et developpement d`un spectrometre photoacoustique integre sur silicium pour analyse de gaz

    Energy Technology Data Exchange (ETDEWEB)

    Jourdain, A.

    1998-10-29

    The study deals with the integration on silicon wafers of an infrared spectrometer for carbon dioxide measurements. Photoacoustic detection that measures a differential pressure in a cavity turns out to be the best spectroscopic technique for miniaturization and integration. The micro-system is composed of two main components: an infrared light source on a silicon nitride membrane and a component integrating a tunable optical filter, a microphone for detection and a micro-cavity. After a theoretical study of the different components, each element is realized with the microelectronic techniques such as photolithography, thin films deposits and dry and wet etching. A resin sealing of all the different elements realizes the final micro-spectrophotometer. A characterization of the components is done thanks to the realization of an electronic specific set-up. (author) 107 refs.

  13. Numerical modelling of micro-machining of f.c.c. single crystal: Influence of strain gradients

    KAUST Repository

    Demiral, Murat

    2014-11-01

    A micro-machining process becomes increasingly important with the continuous miniaturization of components used in various fields from military to civilian applications. To characterise underlying micromechanics, a 3D finite-element model of orthogonal micro-machining of f.c.c. single crystal copper was developed. The model was implemented in a commercial software ABAQUS/Explicit employing a user-defined subroutine VUMAT. Strain-gradient crystal-plasticity and conventional crystal-plasticity theories were used to demonstrate the influence of pre-existing and evolved strain gradients on the cutting process for different combinations of crystal orientations and cutting directions. Crown Copyright © 2014.

  14. Fabrication and Modification of Nanoporous Silicon Particles

    Science.gov (United States)

    Ferrari, Mauro; Liu, Xuewu

    2010-01-01

    Silicon-based nanoporous particles as biodegradable drug carriers are advantageous in permeation, controlled release, and targeting. The use of biodegradable nanoporous silicon and silicon dioxide, with proper surface treatments, allows sustained drug release within the target site over a period of days, or even weeks, due to selective surface coating. A variety of surface treatment protocols are available for silicon-based particles to be stabilized, functionalized, or modified as required. Coated polyethylene glycol (PEG) chains showed the effective depression of both plasma protein adsorption and cell attachment to the modified surfaces, as well as the advantage of long circulating. Porous silicon particles are micromachined by lithography. Compared to the synthesis route of the nanomaterials, the advantages include: (1) the capability to make different shapes, not only spherical particles but also square, rectangular, or ellipse cross sections, etc.; (2) the capability for very precise dimension control; (3) the capacity for porosity and pore profile control; and (4) allowance of complex surface modification. The particle patterns as small as 60 nm can be fabricated using the state-of-the-art photolithography. The pores in silicon can be fabricated by exposing the silicon in an HF/ethanol solution and then subjecting the pores to an electrical current. The size and shape of the pores inside silicon can be adjusted by the doping of the silicon, electrical current application, the composition of the electrolyte solution, and etching time. The surface of the silicon particles can be modified by many means to provide targeted delivery and on-site permanence for extended release. Multiple active agents can be co-loaded into the particles. Because the surface modification of particles can be done on wafers before the mechanical release, asymmetrical surface modification is feasible. Starting from silicon wafers, a treatment, such as KOH dipping or reactive ion

  15. Ultrafast disk technology enables next generation micromachining laser sources

    Science.gov (United States)

    Heckl, Oliver H.; Weiler, Sascha; Luzius, Severin; Zawischa, Ivo; Sutter, Dirk

    2013-02-01

    Ultrashort pulsed lasers based on thin disk technology have entered the 100 W regime and deliver several tens of MW peak power without chirped pulse amplification. Highest uptime and insensitivity to back reflections make them ideal tools for efficient and cost effective industrial micromachining. Frequency converted versions allow the processing of a large variety of materials. On one hand, thin disk oscillators deliver more than 30 MW peak power directly out of the resonator in laboratory setups. These peak power levels are made possible by recent progress in the scaling of the pulse energy in excess of 40 μJ. At the corresponding high peak intensity, thin disk technology profits from the limited amount of material and hence the manageable nonlinearity within the resonator. Using new broadband host materials like for example the sesquioxides will eventually reduce the pulse duration during high power operation and further increase the peak power. On the other hand industry grade amplifier systems deliver even higher peak power levels. At closed-loop controlled 100W, the TruMicro Series 5000 currently offers the highest average ultrafast power in an industry proven product, and enables efficient micromachining of almost any material, in particular of glasses, ceramics or sapphire. Conventional laser cutting of these materials often requires UV laser sources with pulse durations of several nanoseconds and an average power in the 10 W range. Material processing based on high peak power laser sources makes use of multi-photon absorption processes. This highly nonlinear absorption enables micromachining driven by the fundamental (1030 nm) or frequency doubled (515 nm) wavelength of Yb:YAG. Operation in the IR or green spectral range reduces the complexity and running costs of industrial systems initially based on UV light sources. Where UV wavelength is required, the TruMicro 5360 with a specified UV crystal life-time of more than 10 thousand hours of continues

  16. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  17. Physical and electrical characterization of corundum substrates and epitaxial silicon layers in view of fabricating integrated circuits

    International Nuclear Information System (INIS)

    Trilhe, J.; Legal, H.; Rolland, G.

    1975-01-01

    The S.O.S. technology (silicon on insulating substrate) allows compact, radiation hard, fast integrated circuits to be fabricated. It is noticeable that complex integrated circuits on corundum substrates obtained with various fabrication processes have various electrical characteristics. Possible correlations between the macroscopic defects of the substrate and the electrical characteristics of the circuit were investigated [fr

  18. Optimized design of micromachined electric field mills to maximize electrostatic field sensitivity

    Directory of Open Access Journals (Sweden)

    Yu Zhou

    2016-07-01

    Full Text Available This paper describes the design optimization of a micromachined electric field mill, in relation to maximizing its output signal. The cases studied are for a perforated electrically grounded shutter vibrating laterally over sensing electrodes. It is shown that when modeling the output signal of the sensor, the differential charge on the sense electrodes when exposed to vs. visibly shielded from the incident electric field must be considered. Parametric studies of device dimensions show that the shutter thickness and its spacing from the underlying electrodes should be minimized as these parameters very strongly affect the MEFM signal. Exploration of the shutter perforation size and sense electrode width indicate that the best MEFM design is one where shutter perforation widths are a few times larger than the sense electrode widths. Keywords: MEFM, Finite element method, Electric field measurement, MEMS, Micromachining

  19. The thermal neutron absorption cross-sections, resonance integrals and resonance parameters of silicon and its stable isotopes

    International Nuclear Information System (INIS)

    Story, J.S.

    1969-09-01

    The data available up to the end of November 1968 on the thermal neutron absorption cross-sections, resonance absorption integrals, and resonance parameters of silicon and its stable isotopes are collected and discussed. Estimates are given of the mean spacing of the energy levels of the compound nuclei near the neutron binding energy. It is concluded that the thermal neutron absorption cross-section and resonance absorption integral of natural silicon are not well established. The data on these two parameters are somewhat correlated, and three different assessments of the resonance integral are presented which differ over-all by a factor of 230. Many resonances have been detected by charged particle reactions which have not yet been observed in neutron cross-section measurements. One of these resonances of Si 2 8, at E n = 4 ± 5 keV might account for the large resonance integral which is derived, very uncertainly, from integral data. The principal source of the measured resonance integral of Si 3 0 has not yet been located. The thermal neutron absorption cross-section of Si 2 8 appears to result mainly from a negative energy resonance, possibly the resonance at E n = - 59 ± 5 keV detected by the Si 2 8 (d,p) reaction. (author)

  20. Performance of integrated retainer rings in silicon micro-turbines with thrust style micro-ball bearings

    International Nuclear Information System (INIS)

    Hergert, Robert J; Holmes, Andrew S; Hanrahan, Brendan; Ghodssi, Reza

    2013-01-01

    This work explores the performance of different silicon retainer ring designs when integrated into silicon micro-turbines (SMTs) incorporating thrust style bearings supported on 500 µm diameter steel balls. Experimental performance curves are presented for SMTs with rotor diameters of 5 mm and 10 mm, each with five different retainer designs varying in mechanical rigidity, ball pocket shape and ball complement. It was found that the different retainer designs yielded different performance curves, with the closed pocket designs consistently requiring lower input power for a given rotation speed, and the most rigid retainers giving the best performance overall. Both 5 mm and 10 mm diameter devices have shown repeatable performance at rotation speeds up to and exceeding 20 000 RPM with input power levels below 2 W, and devices were tested for over 2.5 million revolutions without failure. Retainer rings are commonly used in macro-scale bearings to ensure uniform spacing between the rolling elements. The integration of retainers into micro-bearings could lower costs by reducing the number of balls required for stable operation, and also open up the possibility of ‘smart’ bearings with integrated sensors to monitor the bearing status. (paper)

  1. Hybrid graphene/silicon integrated optical isolators with photonic spin–orbit interaction

    International Nuclear Information System (INIS)

    Ma, Jingwen; Sun, Xiankai; Xi, Xiang; Yu, Zejie

    2016-01-01

    Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphene's magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spins exhibit different responses to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with the extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 μm. Featuring graphene's CMOS compatibility and substantially reduced device footprint, our proposal sheds light on monolithic integration of nonreciprocal photonic devices.

  2. Removal of endotoxin from deionized water using micromachined silicon nanopore membranes

    International Nuclear Information System (INIS)

    Smith, Ross A; Fissell, William H; Fleischman, Aaron J; Roy, Shuvo; Goldman, Ken; Zorman, Christian A

    2011-01-01

    Endotoxins are lipopolysaccharide components of the cell membrane of Gram-negative bacteria that trigger the body's innate immune system and can cause shock and death. Water for medical therapy, including parenteral and dialysate solutions, must be free of endotoxin. This purity is challenging to achieve as many Gram-negative bacteria are endemic in the environment, and can thrive in harsh, nutrient-poor conditions. Current methods for removing endotoxin include distillation and reverse osmosis, both of which are resource intensive processes. Membranes that present an absolute barrier to macromolecular passage may be capable of delivering pure water for biomedical applications. In this work, endotoxin has been filtered from aqueous solutions using silicon nanopore membranes (SNMs) with monodisperse pore size distributions. SNMs with critical pore sizes between 26 and 49 nm were challenged with solutions of deionized water spiked with endotoxin and with Pseudomonas cepacia. The filtrate produced by the SNM from Pseudomonas-contaminated water had <1.0 endotoxin unit (EU) ml −1 , which meets standards for dialysate purity. This approach suggests a technique for single-step cleanup of heavily contaminated water that may be suitable for field or clinical use

  3. Integration of bulk piezoelectric materials into microsystems

    Science.gov (United States)

    Aktakka, Ethem Erkan

    Bulk piezoelectric ceramics, compared to deposited piezoelectric thin-films, provide greater electromechanical coupling and charge capacity, which are highly desirable in many MEMS applications. In this thesis, a technology platform is developed for wafer-level integration of bulk piezoelectric substrates on silicon, with a final film thickness of 5-100microm. The characterized processes include reliable low-temperature (200°C) AuIn diffusion bonding and parylene bonding of bulk-PZT on silicon, wafer-level lapping of bulk-PZT with high-uniformity (+/-0.5microm), and low-damage micro-machining of PZT films via dicing-saw patterning, laser ablation, and wet-etching. Preservation of ferroelectric and piezoelectric properties is confirmed with hysteresis and piezo-response measurements. The introduced technology offers higher material quality and unique advantages in fabrication flexibility over existing piezoelectric film deposition methods. In order to confirm the preserved bulk properties in the final film, diaphragm and cantilever beam actuators operating in the transverse-mode are designed, fabricated and tested. The diaphragm structure and electrode shapes/sizes are optimized for maximum deflection through finite-element simulations. During tests of fabricated devices, greater than 12microm PP displacement is obtained by actuation of a 1mm2 diaphragm at 111kHz with integration of a 50-80% efficient power management IC, which incorporates a supply-independent bias circuitry, an active diode for low-dropout rectification, a bias-flip system for higher efficiency, and a trickle battery charger. The overall system does not require a pre-charged battery, and has power consumption of <1microW in active-mode (measured) and <5pA in sleep-mode (simulated). Under lg vibration at 155Hz, a 70mF ultra-capacitor is charged from OV to 1.85V in 50 minutes.

  4. A novel integrated multifunction micro-sensor for three-dimensional micro-force measurements.

    Science.gov (United States)

    Wang, Weizhong; Zhao, Yulong; Qin, Yafei

    2012-01-01

    An integrated multifunction micro-sensor for three-dimensional micro-force precision measurement under different pressure and temperature conditions is introduced in this paper. The integrated sensor consists of three kinds of sensors: a three-dimensional micro-force sensor, an absolute pressure sensor and a temperature sensor. The integrated multifunction micro-sensor is fabricated on silicon wafers by micromachining technology. Different doping doses of boron ion, placement and structure of resistors are tested for the force sensor, pressure sensor and temperature sensor to minimize the cross interference and optimize the properties. A glass optical fiber, with a ladder structure and sharp tip etched by buffer oxide etch solution, is glued on the micro-force sensor chip as the tactile probe. Experimental results show that the minimum force that can be detected by the force sensor is 300 nN; the lateral sensitivity of the force sensor is 0.4582 mV/μN; the probe length is linearly proportional to sensitivity of the micro-force sensor in lateral; the sensitivity of the pressure sensor is 0.11 mv/KPa; the sensitivity of the temperature sensor is 5.836 × 10(-3) KΩ/°C. Thus it is a cost-effective method to fabricate integrated multifunction micro-sensors with different measurement ranges that could be used in many fields.

  5. A Novel Integrated Multifunction Micro-Sensor for Three-Dimensional Micro-Force Measurements

    Directory of Open Access Journals (Sweden)

    Yafei Qin

    2012-03-01

    Full Text Available An integrated multifunction micro-sensor for three-dimensional micro-force precision measurement under different pressure and temperature conditions is introduced in this paper. The integrated sensor consists of three kinds of sensors: a three-dimensional micro-force sensor, an absolute pressure sensor and a temperature sensor. The integrated multifunction micro-sensor is fabricated on silicon wafers by micromachining technology. Different doping doses of boron ion, placement and structure of resistors are tested for the force sensor, pressure sensor and temperature sensor to minimize the cross interference and optimize the properties. A glass optical fiber, with a ladder structure and sharp tip etched by buffer oxide etch solution, is glued on the micro-force sensor chip as the tactile probe. Experimental results show that the minimum force that can be detected by the force sensor is 300 nN; the lateral sensitivity of the force sensor is 0.4582 mV/μN; the probe length is linearly proportional to sensitivity of the micro-force sensor in lateral; the sensitivity of the pressure sensor is 0.11 mv/KPa; the sensitivity of the temperature sensor is 5.836 × 10−3 KΩ/°C. Thus it is a cost-effective method to fabricate integrated multifunction micro-sensors with different measurement ranges that could be used in many fields.

  6. Development of optical interference-type micro accelerometer for subsurface microseismic measurement; Micromachining ni yoru chika danseiha keisoku no tame no hikari kanshogata kasokudo sensor no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Hirata, K; Niitsuma, H; Esashi, M [Tohoku University, Sendai (Japan). Faculty of Engineering

    1997-10-22

    Manufacture is under way of an optical interference-type micro accelerometer making use of the micromachining technology and an optical fiber measuring system for detecting microseismic waves in the ground. The sensor is required to be capable of detecting acceleration 0.1-1gal in amplitude, to be flat in amplitude characteristic in a frequency range of 10Hz-several kHz, to be ensured of straight phase characteristics to enable the measurement of transient phenomena, to be low in cross sensitivity, and to be high in resistance to water, pressure, and heat. The sensor is constructed in the following way. In the process for treating silicon, anisotropic etching is performed for the formation of a gap between the fiber end face and oscillator, boron is diffused, a stopper is formed, and then the silicon is subjected to penetrating etching. In the process for the optical fiber section, an optical fiber is inserted into a glass tube and fixed by an adhesive agent, and then the glass tube end face is polished, this together with the fiber end. Indium-tin oxide is sputtered onto the glass tube end. Finally, the sensor is assembled. 5 refs., 4 figs., 1 tab.

  7. Miniaturized flow cytometer with 3D hydrodynamic particle focusing and integrated optical elements applying silicon photodiodes

    NARCIS (Netherlands)

    Rosenauer, M.; Buchegger, W.; Finoulst, I.; Verhaert, P.D.E.M.; Vellekoop, M.

    2010-01-01

    In this study, the design, realization and measurement results of a novel optofluidic system capable of performing absorbance-based flow cytometric analysis is presented. This miniaturized laboratory platform, fabricated using SU-8 on a silicon substrate, comprises integrated polymer-based

  8. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa

    2013-05-30

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  9. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

    2013-01-01

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  10. Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

    Science.gov (United States)

    Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

    2016-09-19

    Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

  11. Bending-induced electromechanical coupling and large piezoelectric response in a micromachined diaphragm

    KAUST Repository

    Wang, Zhihong; Yao, Yingbang; Wang, Xianbin; Yue, Weisheng; Chen, Longqing; Zhang, Xixiang

    2013-01-01

    We investigated the dependence of electromechanical coupling and the piezoelectric response of a micromachined Pb(Zr 0.52 Ti 0.48)O 3 (PZT) diaphragm on its curvature by observing the impedance spectrum and central deflection responses to a small AC

  12. Sensitivity of Micromachined Joule-Thomson Cooler to Clogging Due to Moisture

    NARCIS (Netherlands)

    Cao, Haishan; Vanapalli, Srinivas; Holland, Herman J.; Vermeer, Cristian Hendrik; ter Brake, Hermanus J.M.

    2015-01-01

    A major issue in long-term operation of micromachined Joule-Thomson coolers is the clogging of the microchannels and/or the restriction due to the deposition of water molecules present in the working fluid. In this study, we present the performance of a microcooler operated with nitrogen gas with

  13. Optoelectronic Device Integration in Silicon (OpSIS)

    Science.gov (United States)

    2015-10-26

    silicon-on-insulator," Opt. Express 22, 17872-17879 (2014) Y. Yang, C. Galland, Y. Liu, K. Tan , R. Ding, Q. Li, K. Bergman, T. Baehr-Jones, M...Jaeger, Nicolas AF; Chrostowski, Lukas; “Electrically tunable resonant filters in phase-shifted contra- directional couplers” IEEE Group IV Photonics... Nicolas AF; Chrostowski, Lukas; “Silicon photonic grating-assisted, contra-directional couplers” Optics express Vol. 21, No. 3; 3633-3650 (2013

  14. Piezoelectric MEMS sensors: state-of-the-art and perspectives

    International Nuclear Information System (INIS)

    Tadigadapa, S; Mateti, K

    2009-01-01

    Over the past two decades, several advances have been made in micromachined sensors and actuators. As the field of microelectromechanical systems (MEMS) has advanced, a clear need for the integration of materials other than silicon and its compounds into micromachined transducers has emerged. Piezoelectric materials are high energy density materials that scale very favorably upon miniaturization and that has led to an ever-growing interest in piezoelectric films for MEMS applications. At this time, piezoelectric aluminum-nitride-based film bulk acoustic resonators (FBAR) have already been successfully commercialized. Future innovations and improvements in inertial sensors for navigation, high-frequency crystal oscillators and filters for wireless applications, microactuators for RF applications, chip-scale chemical analysis systems and countless other applications hinge upon the successful miniaturization of components and integration of piezoelectrics and metals into these systems. In this article, a comprehensive review of micromachined piezoelectric transducer technology will be presented. Piezoelectric materials in bulk and thin film forms will be reviewed and fabrication techniques for the integration of these materials for microsensor applications will be presented. Recent advances in various piezoelectric microsensors will be presented through specific examples. This review will conclude with a critical assessment of the future trends and promise of this technology. (topical review)

  15. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  16. Arrayed architectures for multi-stage Si-micromachined high-flow Knudsen pumps

    International Nuclear Information System (INIS)

    Qin, Yutao; An, Seungdo; Gianchandani, Yogesh B

    2015-01-01

    This paper reports an evaluation and a comparison of two architectures for implementing Si-micromachined high-flow Knudsen pumps. Knudsen pumps, which operate on the principle of thermal transpiration, have been shown to have great promise for micro-scale gas phase fluidic systems such as micro gas chromatographs. Simultaneously achieving both a high flow rate and adequate blocking pressure has been a persistent challenge, which is addressed in this work by combining multiple pumps in series and addressing the resulting challenges in thermal management. The basic building block is a Si-micromachined pump with  ≈100 000 parallel channels in a 4 mm  ×  6 mm footprint. In the primary approach, multiple pump stages are stacked vertically with interleaved Si-micromachined spacers. A stacked 4-stage Knudsen pump has a form factor of 10 mm  ×  8 mm  ×  6 mm. In an alternate approach, multiple stages are arranged in a planar array. The experimental results demonstrate multiplication of the output pressure head with the number of stages, while the flow rate is maintained. For example, a stacked 4-stage Knudsen pump with 8 W power operated at atmospheric pressure provided a blocking pressure of 0.255 kPa, which was 3.6  ×  of that provided by a single-stage pump with 2 W power; while both provided a  ≈  30 sccm maximum flow rate. The performance can be customized for practical applications such as micro gas chromatography. (paper)

  17. Experimental and Modeling Study of Liquid-Assisted—Laser Beam Micromachining of Smart Ceramic Materials

    Directory of Open Access Journals (Sweden)

    Mayur Parmar

    2018-05-01

    Full Text Available Smart ceramic materials are next generation materials with the inherent intelligence to adapt to change in the external environment. These materials are destined to play an essential role in several critical engineering applications. Machining these materials using traditional machining processes is a challenge. The laser beam micromachining (LBMM process has the potential to machine such smart materials. However, laser machining when performed in air induces high thermal stress on the surface, often leading to crack formation, recast and re-deposition of ablated material, and large heat-affected zones (HAZ. Performing laser beam machining in the presence of a liquid medium could potentially resolve these issues. This research investigates the possibility of using a Liquid Assisted—Laser Beam Micromachining (LA-LBMM process for micromachining smart ceramic materials. Experimental studies are performed to compare the machining quality of laser beam machining process in air and in a liquid medium. The study reveals that the presence of liquid medium helps in controlling the heat-affected zone and the taper angle of the cavity drilled, thereby enhancing the machining quality. Analytical modeling is developed for the prediction of HAZ and cavity diameter both in air and underwater conditions, and the model is capable of predicting the experimental results to within 10% error.

  18. Piezoresistive pressure sensor using low-temperature aluminium induced crystallization of sputter-deposited amorphous silicon film

    International Nuclear Information System (INIS)

    Tiwari, Ruchi; Chandra, Sudhir

    2013-01-01

    In the present work, we have investigated the piezoresistive properties of silicon films prepared by the radio frequency magnetron sputtering technique, followed by the aluminium induced crystallization (AIC) process. Orientation and grain size of the polysilicon films were studied by x-ray diffraction analysis and found to be in the range 30–50 nm. Annealing of the Al–Si stack on an oxidized silicon substrate was performed in air ambient at 300–550 °C, resulting in layer exchange and transformation from amorphous to polysilicon phase. Van der Pauw and Hall measurement techniques were used to investigate the sheet resistance and carrier mobility of the resulting polycrystalline silicon film. The effect of Al thickness on the sheet resistance and mobility was also studied in the present work. A piezoresistive pressure sensor was fabricated on an oxidized silicon substrate in a Wheatstone bridge configuration, comprising of four piezoresistors made of polysilicon film obtained by the AIC process. The diaphragm was formed by the bulk-micromachining of silicon substrate. The response of the pressure sensor with applied negative pressure in 10–95 kPa range was studied. The gauge factor was estimated to be 5 and 18 for differently located piezoresistors on the diaphragm. The sensitivity of the pressure sensor was measured to be ∼ 30 mV MPa −1 , when the Wheatstone bridge was biased at 1 V input voltage. (paper)

  19. Design and Performance of a Focus-Detection System for Use in Laser Micromachining

    Directory of Open Access Journals (Sweden)

    Binh Xuan Cao

    2016-01-01

    Full Text Available We describe a new approach for locating the focal position in laser micromachining. This approach is based on a feedback system that uses a charge-coupled device (CCD camera, a beam splitter, and a mirror to focus a laser beam on the surface of a work piece. We tested the proposed method for locating the focal position by using Zemax simulations, as well as physically carrying out drilling processes. Compared with conventional methods, this approach is advantageous because: the implementation is simple, the specimen can easily be positioned at the focal position, and the dynamically adjustable scan amplitude and the CCD camera can be used to monitor the laser beam’s profile. The proposed technique will be particularly useful for locating the focal position on any surface in laser micromachining.

  20. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    International Nuclear Information System (INIS)

    Alemi, M.; Campbell, M.; Gys, T.; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K.

    2000-01-01

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface

  1. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    Energy Technology Data Exchange (ETDEWEB)

    Alemi, M.; Campbell, M.; Gys, T. E-mail: thierry.gys@cern.ch; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K

    2000-07-11

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface.

  2. FY 1994 Report on the technical results. Research and development of micromachine technologies (Development of highly functional maintenance technologies for power plants); 1994 nendo micromachine gijutsu no kenkyu kaihatsu seika hokokusho. Hatsuden shisetsuyo kokino maintenance gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-09-01

    This research and development project is aimed at development of the technologies for the micromachines provided with maintenance functions, e.g., for examination and maintenance of abnormal conditions in heat exchangers, piping systems or the like. The initial target is set at establishment of basic technologies for the micromachines, in consideration of the available technologies. The R and D activities are directed to (1) microcapsules for, e.g., micro power generators, (2) mother machines having controlling and instructing functions, (3) non-cabled examination modules, (4) cabled examination modules, and (5) total systems. The item (1) involves the micro power generators, and mechanisms of signal transmission, flaw finding and driving/suspension; the item (2) mechanisms of micro-optics and connection, group controlling, microbatteries, action type controlling, and artificial muscles; the item (3) expansion/contraction type transfer mechanisms, light energy supply, micro visual sensation, function connection, and concerted controlling; the item (4) tubular manipulators, and mechanisms of light-aided power generation and voltage elevation; and the item (5) maintenance and micromachine systems. (NEDO)

  3. Silicon photonic integrated circuit swept-source optical coherence tomography receiver with dual polarization, dual balanced, in-phase and quadrature detection.

    Science.gov (United States)

    Wang, Zhao; Lee, Hsiang-Chieh; Vermeulen, Diedrik; Chen, Long; Nielsen, Torben; Park, Seo Yeon; Ghaemi, Allan; Swanson, Eric; Doerr, Chris; Fujimoto, James

    2015-07-01

    Optical coherence tomography (OCT) is a widely used three-dimensional (3D) optical imaging method with many biomedical and non-medical applications. Miniaturization, cost reduction, and increased functionality of OCT systems will be critical for future emerging clinical applications. We present a silicon photonic integrated circuit swept-source OCT (SS-OCT) coherent receiver with dual polarization, dual balanced, in-phase and quadrature (IQ) detection. We demonstrate multiple functional capabilities of IQ polarization resolved detection including: complex-conjugate suppressed full-range OCT, polarization diversity detection, and polarization-sensitive OCT. To our knowledge, this is the first demonstration of a silicon photonic integrated receiver for OCT. The integrated coherent receiver provides a miniaturized, low-cost solution for SS-OCT, and is also a key step towards a fully integrated high speed SS-OCT system with good performance and multi-functional capabilities. With further performance improvement and cost reduction, photonic integrated technology promises to greatly increase penetration of OCT systems in existing applications and enable new applications.

  4. A Micromachined Capacitive Pressure Sensor Using a Cavity-Less Structure with Bulk-Metal/Elastomer Layers and Its Wireless Telemetry Application

    Directory of Open Access Journals (Sweden)

    Yogesh B. Gianchandani

    2008-04-01

    Full Text Available This paper reports a micromachined capacitive pressure sensor intended for applications that require mechanical robustness. The device is constructed with two micromachined metal plates and an intermediate polymer layer that is soft enough to deform in a target pressure range. The plates are formed of micromachined stainless steel fabricated by batch-compatible micro-electro-discharge machining. A polyurethane roomtemperature- vulcanizing liquid rubber of 38-μm thickness is used as the deformable material. This structure eliminates both the vacuum cavity and the associated lead transfer challenges common to micromachined capacitive pressure sensors. For frequency-based interrogation of the capacitance, passive inductor-capacitor tanks are fabricated by combining the capacitive sensor with an inductive coil. The coil has 40 turns of a 127-μmdiameter copper wire. Wireless sensing is demonstrated in liquid by monitoring the variation in the resonant frequency of the tank via an external coil that is magnetically coupled with the tank. The sensitivity at room temperature is measured to be 23-33 ppm/KPa over a dynamic range of 340 KPa, which is shown to match a theoretical estimation. Temperature dependence of the tank is experimentally evaluated.

  5. Influence of micromachined targets on laser accelerated proton beam profiles

    Science.gov (United States)

    Dalui, Malay; Permogorov, Alexander; Pahl, Hannes; Persson, Anders; Wahlström, Claes-Göran

    2018-03-01

    High intensity laser-driven proton acceleration from micromachined targets is studied experimentally in the target-normal-sheath-acceleration regime. Conical pits are created on the front surface of flat aluminium foils of initial thickness 12.5 and 3 μm using series of low energy pulses (0.5-2.5 μJ). Proton acceleration from such micromachined targets is compared with flat foils of equivalent thickness at a laser intensity of 7 × 1019 W cm-2. The maximum proton energy obtained from targets machined from 12.5 μm thick foils is found to be slightly lower than that of flat foils of equivalent remaining thickness, and the angular divergence of the proton beam is observed to increase as the depth of the pit approaches the foil thickness. Targets machined from 3 μm thick foils, on the other hand, show evidence of increasing the maximum proton energy when the depths of the structures are small. Furthermore, shallow pits on 3 μm thick foils are found to be efficient in reducing the proton beam divergence by a factor of up to three compared to that obtained from flat foils, while maintaining the maximum proton energy.

  6. A thermal-driven silicon micro xy-stage integrated with piezoresistive sensors for nano-positioning

    International Nuclear Information System (INIS)

    Choi, Young-Soo; Zhang, Yan; Lee, Dong-Weon

    2012-01-01

    This paper describes a novel micro xy-stage, driven by double-hot arm horizontal thermal micro-actuators integrated with a piezoresistive sensor (PS) for low-voltage operation and precise control. This micro xy-stage structure is linked with chevron beams and optimized to amplify the displacement generated by the micro-actuators that provide a pull force to the movable platform. The PS employed for in situ displacement detection and feedback control is fabricated at the base of a cold arm, which minimizes the influence of temperature change induced by electro-thermal heating. The micro xy-stage structure is defined through the use of a simple micromachining process, released by backside wet etching with a special tool. For an input power of approximately 44 mW, each chevron actuator provides about 16 µm and the total displacement of the platform is close to 32 µm. The sensitivity of the PS is better than 1 mV µm −1 , obtained from the amplified voltage output of the Wheatstone bridge circuit. The potential applications of the proposed micro xy-stage lie in micro- or nano-manipulation, as well as the positioning of ultra-small objects in nanotechnology. (paper)

  7. Achievement report on commissioned research of R and D in fiscal 1999 on micro-machine technologies. R and D of micro-machine technologies; 1999 nendo kenkyu seika hokokusho. Maikuro mashin gijutsu no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    With an objective to perform diagnoses and medical treatment in space limited portions in living organisms, research on micro-machine systems, research on a scanning type photographing unit in the medical micro-machine, and comprehensive surveys and researches have been conducted. This paper summarizes the achievements in fiscal 1999. In the research of a micro laser catheter, a prototype laser head having an outer diameter of 1 mm was fabricated, whereas composition was realized with a micro catheter having an outer diameter of 1.5 mm. With regard to the micro pressure sensor for catheterization, good active curving action was realized by a catheter in which a pressure sensor is mounted in the SMA curved catheter head. Research on the scanning type photographing unit has been carried out, for reducing further the diameter and size of an endoscope, on a photographing unit using laser beam whose cross section area of the tip optical section is about half of the conventional units. As a result, a high resolution scanning type photographing unit was realized based on the fiber optic system using a scanning mirror. In the comprehensive surveys and researches, items of information were collected in relation with the basic technologies for micro-machines. (NEDO)

  8. Double-section curvature tunable functional actuator with micromachined buckle and grid wire for electricity delivery

    Science.gov (United States)

    Feng, Guo-Hua; Hou, Sheng-You

    2015-09-01

    This paper presents an ionic polymer metal composite (IPMC)-driven tentacle-like biocompatible flexible actuator with double-section curvature tunability. This actuator, possessing an embedded electrical transmission ability that mimics skeletal muscle nerves in the human body, affords versatile device functions. Novel micromachined copper buckles and grid wires are fabricated and their superiority in electricity delivery and driving the IPMC component with less flexural rigidity is demonstrated. In addition, soft conductive wires realized on a polydimethylsiloxane structure function as electrical signal transmitters. A light-emitting diode integrated with the developed actuator offers directional guiding light ability while the actuator performs a snake-like motion. The electrical conductivity and Young’s modulus of the key actuator components are investigated, and flexural rigidity and dynamic behavior analyses of the actuator under electrical manipulation are elaborated.

  9. Double-section curvature tunable functional actuator with micromachined buckle and grid wire for electricity delivery

    International Nuclear Information System (INIS)

    Feng, Guo-Hua; Hou, Sheng-You

    2015-01-01

    This paper presents an ionic polymer metal composite (IPMC)-driven tentacle-like biocompatible flexible actuator with double-section curvature tunability. This actuator, possessing an embedded electrical transmission ability that mimics skeletal muscle nerves in the human body, affords versatile device functions. Novel micromachined copper buckles and grid wires are fabricated and their superiority in electricity delivery and driving the IPMC component with less flexural rigidity is demonstrated. In addition, soft conductive wires realized on a polydimethylsiloxane structure function as electrical signal transmitters. A light-emitting diode integrated with the developed actuator offers directional guiding light ability while the actuator performs a snake-like motion. The electrical conductivity and Young’s modulus of the key actuator components are investigated, and flexural rigidity and dynamic behavior analyses of the actuator under electrical manipulation are elaborated. (paper)

  10. Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

    Science.gov (United States)

    Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

    1991-01-01

    A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

  11. An analog front-end bipolar-transistor integrated circuit for the SDC silicon tracker

    International Nuclear Information System (INIS)

    Kipnis, I.; Spieler, H.; Collins, T.

    1994-01-01

    Since 1989 the Solenoidal Detector Collaboration (SDC) has been developing a general purpose detector to be operated at the Superconducting Super Collider (SSC). A low-noise, low-power, high-bandwidth, radiation hard, silicon bipolar-transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDS silicon tracker. The IC was designed and tested at LBL and was fabricated using AT and T's CBIC-U2, 4 GHz f T complementary bipolar technology. Each channel contains the following functions: low-noise preamplification, pulse shaping and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 μm pitch double-sided silicon strip detector. The chip measures 6.8 mm x 3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. rms at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to 4 times the noise level, a 16nsec time-walk for 1.25 to 10 fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a φ = 10 14 protons/cm 2 have been performed on the JC, demonstrating the radiation hardness of the complementary bipolar process

  12. High-End Silicon PDICs

    Directory of Open Access Journals (Sweden)

    H. Zimmermann

    2008-05-01

    Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

  13. Manufacturing and characterization of bent silicon crystals for studies of coherent interactions with negatively charged particles beams

    Energy Technology Data Exchange (ETDEWEB)

    Germogli, G.; Mazzolari, A.; Bandiera, L.; Bagli, E.; Guidi, V.

    2015-07-15

    Efficient steering of GeV-energy negatively charged particle beams was demonstrated to be possible with a new generation of thin bent silicon crystals. Suitable crystals were produced at the Sensor Semiconductor Laboratory of Ferrara starting from Silicon On Insulator wafers, adopting proper revisitation of silicon micromachining techniques such as Low Pressure Chemical Vapor Deposition, photolithography and anisotropic chemical etching. Mechanical holders, which allow to properly bend the crystal and to reduce unwanted torsions, were employed. Crystallographic directions and crystal holder design were optimized in order to excite quasi-mosaic effect along (1 1 1) planes. Prior to exposing the crystal to particle beams, a full set of characterizations were performed. Infrared interferometry was used to measure crystal thickness with high accuracy. White-light interferometry was employed to characterize surface deformational state and its torsion. High-resolution X-rays diffraction was used to precisely measure crystal bending angle along the beam. Manufactured crystals were installed and tested at the MAMI MAinz MIcrotron to steer sub-GeV electrons, and at SLAC to deflect an electron beam in the 1 to 10 GeV energy range.

  14. Fiscal 1997 report on technological results. R and D on micromachine technology (Development of micro-factory technology); 1997 nendo micromachine gijutsu no kenkyu kaihatsu seika hokokusho. Microfactory gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Activities are conducted in search of a micromachine system in which devices and equipment relating to machining, assembly, transportation, inspection, etc., in use for a manufacturing process are integrated in a narrow space, for the purpose of conserving energy through the miniaturization of the process of manufacturing small industrial products. With the activities in the two fields of (1) R and D of systematization technology (experimental system for micro fabrication/assembly) and (2) comprehensive investigation and research, examination on detailed specification for the experimental system was carried out, as were the examination of element technologies, element device operating experiments, technological investigation, etc.. In (1), sophistication of the element technologies was contrived that were required for realizing each experimental system, while the detailed specification of each experimental system was decided. Further, a part of the element devices was experimentally manufactured, with the basic functions verified. In (2), research studies were compiled on radio interference for example in the case where various devices were integrated and highly densified through the formation of a micro-factory; also compiled was a joint research with Agency of Industrial Science and Technology, a research conducted for the purpose of building the conception of the micro-factory. (NEDO)

  15. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  16. Silicon Hard-Stop Mesas for 3D Integration of Superconducting Qubits

    Science.gov (United States)

    Kim, David; Rosenberg, Danna; Osadchy, Brenda; Calusine, Greg; Das, Rabindra; Melville, Alexander; Yoder, Jonilyn; Yost, Donna-Ruth; Racz, Livia; Oliver, William

    As quantum computing with superconducting qubits advances past the few-qubit stage, implementing 3D packaging/integration to route readout/control lines will become increasingly important. One approach is to bond chips that perform different functions using indium bump bonds. Because indium is malleable, however, achieving the desired spacing and tilt between two chips can be challenging. We present an approach based on etching several microns into the silicon substrate to produce hard stop silicon posts. Since this process involves etching into a pristine substrate, it is essential to evaluate its impact on qubit performance. We report the etched surface's effect on the resonator quality factor and qubit coherence time, as well as the improvement in planarity and tilt. This research was funded in part by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA) and by the Assistant Secretary of Defense for Research & Engineering under Air Force Contract No. FA8721-05-C-0002. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of ODNI, IARPA, or the US Government.

  17. Receive-Noise Analysis of Capacitive Micromachined Ultrasonic Transducers.

    Science.gov (United States)

    Bozkurt, Ayhan; Yaralioglu, G Goksenin

    2016-11-01

    This paper presents an analysis of thermal (Johnson) noise received from the radiation medium by otherwise noiseless capacitive micromachined ultrasonic transducer (CMUT) membranes operating in their fundamental resonance mode. Determination of thermal noise received by multiple numbers of transducers or a transducer array requires the assessment of cross-coupling through the radiation medium, as well as the self-radiation impedance of the individual transducer. We show that the total thermal noise received by the cells of a CMUT has insignificant correlation, and is independent of the radiation impedance, but is only determined by the mass of each membrane and the electromechanical transformer ratio. The proof is based on the analytical derivations for a simple transducer with two cells, and extended to transducers with numerous cells using circuit simulators. We used a first-order model, which incorporates the fundamental resonance of the CMUT. Noise power is calculated by integrating over the entire spectrum; hence, the presented figures are an upper bound for the noise. The presented analyses are valid for a transimpedance amplifier in the receive path. We use the analysis results to calculate the minimum detectable pressure of a CMUT. We also provide an analysis based on the experimental data to show that output noise power is limited by and comparable to the theoretical upper limit.

  18. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  19. Mechanical integration of the detector components for the CBM silicon tracking system

    Energy Technology Data Exchange (ETDEWEB)

    Vasylyev, Oleg; Niebur, Wolfgang [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

    2016-07-01

    The Compressed Baryonic Matter experiment (CBM) at FAIR is designed to explore the QCD phase diagram in the region of high net-baryon densities. The central detector component, the Silicon Tracking System (STS) is based on double-sided micro-strip sensors. In order to achieve the physics performance, the detector mechanical structures should be developed taking into account the requirements of the CBM experiments: low material budget, high radiation environment, interaction rates, aperture for the silicon tracking, detector segmentation and mounting precision. A functional plan of the STS and its surrounding structural components is being worked out from which the STS system shape is derived and the power and cooling needs, the connector space requirements, life span of components and installation/repair aspects are determined. The mechanical integration is at the point of finalizing the design stage and moving towards production readiness. This contribution shows the current processing state of the following engineering tasks: construction space definition, carbon ladder shape and manufacturability, beam-pipe feedthrough structure, prototype construction, cable routing and modeling of the electronic components.

  20. Silicon photonics III systems and applications

    CERN Document Server

    Lockwood, David

    2016-01-01

    This book is volume III of a series of books on silicon photonics. It reports on the development of fully integrated systems where many different photonics component are integrated together to build complex circuits. This is the demonstration of the fully potentiality of silicon photonics. It contains a number of chapters written by engineers and scientists of the main companies, research centers and universities active in the field. It can be of use for all those persons interested to know the potentialities and the recent applications of silicon photonics both in microelectronics, telecommunication and consumer electronics market.

  1. A review of recent progress in heterogeneous silicon tandem solar cells

    Science.gov (United States)

    Yamaguchi, Masafumi; Lee, Kan-Hua; Araki, Kenji; Kojima, Nobuaki

    2018-04-01

    Silicon solar cells are the most established solar cell technology and are expected to dominate the market in the near future. As state-of-the-art silicon solar cells are approaching the Shockley-Queisser limit, stacking silicon solar cells with other photovoltaic materials to form multi-junction devices is an obvious pathway to further raise the efficiency. However, many challenges stand in the way of fully realizing the potential of silicon tandem solar cells because heterogeneously integrating silicon with other materials often degrades their qualities. Recently, above or near 30% silicon tandem solar cell has been demonstrated, showing the promise of achieving high-efficiency and low-cost solar cells via silicon tandem. This paper reviews the recent progress of integrating solar cell with other mainstream solar cell materials. The first part of this review focuses on the integration of silicon with III-V semiconductor solar cells, which is a long-researched topic since the emergence of III-V semiconductors. We will describe the main approaches—heteroepitaxy, wafer bonding and mechanical stacking—as well as other novel approaches. The second part introduces the integration of silicon with polycrystalline thin-film solar cells, mainly perovskites on silicon solar cells because of its rapid progress recently. We will also use an analytical model to compare the material qualities of different types of silicon tandem solar cells and project their practical efficiency limits.

  2. Silicon based light-emitting materials and devices

    International Nuclear Information System (INIS)

    Chen Weide

    1999-01-01

    Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

  3. Implanted Silicon Resistor Layers for Efficient Terahertz Absorption

    Science.gov (United States)

    Chervenak, J. A.; Abrahams, J.; Allen, C. A.; Benford, D. J.; Henry, R.; Stevenson, T.; Wollack, E.; Moseley, S. H.

    2005-01-01

    Broadband absorption structures are an essential component of large format bolometer arrays for imaging GHz and THz radiation. We have measured electrical and optical properties of implanted silicon resistor layers designed to be suitable for these absorbers. Implanted resistors offer a low-film-stress, buried absorber that is robust to longterm aging, temperature, and subsequent metals processing. Such an absorber layer is readily integrated with superconducting integrated circuits and standard micromachining as demonstrated by the SCUBA II array built by ROE/NIST (1). We present a complete characterization of these layers, demonstrating frequency regimes in which different recipes will be suitable for absorbers. Single layer thin film coatings have been demonstrated as effective absorbers at certain wavelengths including semimetal (2,3), thin metal (4), and patterned metal films (5,6). Astronomical instrument examples include the SHARC II instrument is imaging the submillimeter band using passivated Bi semimetal films and the HAWC instrument for SOFIA, which employs ultrathin metal films to span 1-3 THz. Patterned metal films on spiderweb bolometers have also been proposed for broadband detection. In each case, the absorber structure matches the impedance of free space for optimal absorption in the detector configuration (typically 157 Ohms per square for high absorption with a single or 377 Ohms per square in a resonant cavity or quarter wave backshort). Resonant structures with -20% bandwidth coupled to bolometers are also under development; stacks of such structures may take advantage of instruments imaging over a wide band. Each technique may enable effective absorbers in imagers. However, thin films tend to age, degrade or change during further processing, can be difficult to reproduce, and often exhibit an intrinsic granularity that creates complicated frequency dependence at THz frequencies. Thick metal films are more robust but the requirement for

  4. The SuperB Silicon Vertex Tracker and 3D vertical integration

    CERN Document Server

    Re, Valerio

    2011-01-01

    The construction of the SuperB high luminosity collider was approved and funded by the Italian government in 2011. The performance specifications set by the target luminosity of this machine (> 10^36 cm^-2 s^-1) ask for the development of a Silicon Vertex Tracker with high resolution, high tolerance to radiation and excellent capability of handling high data rates. This paper reviews the R&D activity that is being carried out for the SuperB SVT. Special emphasis is given to the option of exploiting 3D vertical integration to build advanced pixel sensors and readout electronics that are able to comply with SuperB vertexing requirements.

  5. Electrostatic microactuators with integrated gear linkages for mechanical power transmission

    NARCIS (Netherlands)

    Legtenberg, R.; Legtenberg, Rob; Berenschot, Johan W.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    1996-01-01

    In this paper a surface micromachining process is presented which has been used to fabricate electrostatic microactuators that are interconnected with each other and linked to other movable microstructures by integrated gear linkages. The gear linkages consist of rotational and linear gear

  6. Building integration photovoltaic module with reference to Ghana: using triple junction amorphous silicon

    OpenAIRE

    Essah, Emmanuel Adu

    2010-01-01

    This paper assesses the potential for using building integrated photovoltaic (BIPV) \\ud roof shingles made from triple-junction amorphous silicon (3a-Si) for electrification \\ud and as a roofing material in tropical countries, such as Accra, Ghana. A model roof \\ud was constructed using triple-junction amorphous (3a-Si) PV on one section and \\ud conventional roofing tiles on the other. The performance of the PV module and tiles \\ud were measured, over a range of ambient temperatures and solar...

  7. Ka-band to L-band frequency down-conversion based on III-V-on-silicon photonic integrated circuits

    Science.gov (United States)

    Van Gasse, K.; Wang, Z.; Uvin, S.; De Deckere, B.; Mariën, J.; Thomassen, L.; Roelkens, G.

    2017-12-01

    In this work, we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we demonstrate frequency conversion using an integrated mode-locked laser and integrated modulator. In our experiments, five channels in the Ka-band (27.5-30 GHz) with 500 MHz bandwidth are down-converted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of - 20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a positive conversion gain can be obtained on a millimeter-sized photonic integrated circuit.

  8. Twenty-fold plasmon-induced enhancement of radiative emission rate in silicon nanocrystals embedded in silicon dioxide

    International Nuclear Information System (INIS)

    Gardelis, S; Gianneta, V.; Nassiopoulou, A.G

    2016-01-01

    We report on a 20-fold enhancement of the integrated photoluminescence (PL) emission of silicon nanocrystals, embedded in a matrix of silicon dioxide, induced by excited surface plasmons from silver nanoparticles, which are located in the vicinity of the silicon nanocrystals and separated from them by a silicon dioxide layer of a few nanometers. The electric field enhancement provided by the excited surface plasmons increases the absorption cross section and the emission rate of the nearby silicon nanocrystals, resulting in the observed enhancement of the photoluminescence, mainly attributed to a 20-fold enhancement in the emission rate of the silicon nanocrystals. The observed remarkable improvement of the PL emission makes silicon nanocrystals very useful material for photonic, sensor and solar cell applications.

  9. Design challenges for stepper motor actuated microvalve based on fine and micro-machining

    NARCIS (Netherlands)

    Fazal, I.; Elwenspoek, Michael Curt

    2007-01-01

    We present a normally open stepper motor actuated microvalve based on micro and fine-machining technique. In this paper, first we have described how the larger controllable flow range can be achieved with simple micromachining techniques and secondly we have presented the results which show how the

  10. Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications

    NARCIS (Netherlands)

    Saravanan, S.; Saravanan, S.; Berenschot, Johan W.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt

    We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive

  11. Surface micromachined counter-meshing gears discrimination device

    International Nuclear Information System (INIS)

    Polosky, M.A.; Garcia, E.J.; Allen, J.J.

    1998-01-01

    This paper discusses the design, fabrication and testing of a surface micromachined Counter-Meshing Gears (CMG) discrimination device which functions as a mechanically coded lock, A 24 bit code is input to unlock the device. Once unlocked, the device provides a path for an energy or information signal to pass through the device. The device is designed to immediately lock up if any portion of the 24 bit code is incorrect. The motivation for the development of this device is based on occurrences referred to as High Consequence Events, A High Consequence Event is an event where an inadvertent operation of a system could result in the catastrophic loss of life, property, or damage to the environment

  12. Tin (Sn) for enhancing performance in silicon CMOS

    KAUST Repository

    Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo T.; Schwingenschlö gl, Udo; Hussain, Muhammad Mustafa

    2013-01-01

    We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon. © 2013 IEEE.

  13. Tin (Sn) for enhancing performance in silicon CMOS

    KAUST Repository

    Hussain, Aftab M.

    2013-10-01

    We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon. © 2013 IEEE.

  14. A LabVIEWTM-based scanning and control system for proton beam micromachining

    International Nuclear Information System (INIS)

    Bettiol, Andrew A.; Kan, J.A. van; Sum, T.C.; Watt, F.

    2001-01-01

    LabVIEW TM is steadily gaining in popularity as the programming language of choice for scientific data acquisition and control. This is due to the vast array of measurement instruments and data acquisition cards supported by the LabVIEW TM environment, and the relative ease with which advanced software can be programmed. Furthermore, virtual instruments that are designed for a given system can be easily ported to other LabVIEW TM platforms and hardware. This paper describes the new LabVIEW TM based scanning and control system developed specifically for proton beam micromachining (PBM) applications. The new system is capable of scanning figures at 16-bit resolution with improved sub-microsecond scan rates. Support for electrostatic beam blanking and external dose normalization using a TTL signal have been implemented. The new software incorporates a semi-automated dose calibration system, and a number of novel dose normalization methods. Limitations of the current beam scanning hardware are discussed in light of new results obtained from micromachining experiments performed in SU-8 photoresist

  15. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  16. Simultaneous measurements of thermal conductivity and electrical conductivity of micro-machined Silicon films

    International Nuclear Information System (INIS)

    Hagino, H; Kawahara, Y; Goto, A; Miyazaki, K

    2012-01-01

    The in-plane effective thermal conductivity of free-standing Si thin films with periodic micropores was measured at -100 to 0 °C. The Si thin films with micropores were prepared from silicon-on-insulator (SOI) wafers by standard microfabrication processes. The dimensions of the free-standing Si thin films were 200μm×150μm×2 μm, with staggered 4 μm pores having an average pitch of 4 mm. The Si thin film serves both as a heater and thermometer. The average temperature rise of the thin film is a function of its in-plane thermal conductivity. The effective thermal conductivity was calculated using a simple one-dimensional heat conduction model. The measured thermal conductivity was much lower than that expected based on classical model evaluations. A significant phonon size effect was observed even in the microsized structures, and the mean free path for phonons is very long even at the room temperature.

  17. High-performance RF coil inductors on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Malba, V.; Young, D.; Ou, J.J.; Bernhardt, A.F.; Boser, B.E.

    1998-03-01

    Strong demand for wireless communication devices has motivated research directed toward monolithic integration of transceivers. The fundamental electronic component least compatible with silicon integrated circuits is the inductor, although a number of inductors are required to implement oscillators, filters and matching networks in cellular devices. Spiral inductors have been integrated into the silicon IC metallization sequence but have not performed adequately due to coupling to the silicon which results in parasitic capacitance and loss. We have, for the first time, fabricated three dimensional coil inductors on silicon which have significantly lower capacitive coupling and loss and which now exceed the requirements of potential applications. Quality factors of 30 at 1 GHz have been measured in single turn devices and Q > 16 in 2 and 4 turn devices. The reduced Q for multiturn devices appears to be related to eddy currents in outer turns generated by magnetic fields from current in neighboring turns. Higher Q values significantly in excess of 30 are anticipated using modified coil designs.

  18. Silicon photonics for telecommunications and biomedicine

    CERN Document Server

    Fathpour, Sasan

    2011-01-01

    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  19. 3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

    Energy Technology Data Exchange (ETDEWEB)

    Da Vià, Cinzia; Boscardil, Maurizio; Dalla Betta, GianFranco; Darbo, Giovanni; Fleta, Celeste; Gemme, Claudia; Giacomini, Gabriele; Grenier, Philippe; Grinstein, Sebastian; Hansen, Thor-Erik; Hasi, Jasmine; Kenney, Christopher; Kok, Angela; La Rosa, Alessandro; Micelli, Andrea; Parker, Sherwood; Pellegrini, Giulio; Pohl, David-Leon; Povoli, Marco; Vianello, Elisa; Zorzi, Nicola; Watts, S. J.

    2013-01-01

    3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

  20. 3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

    Energy Technology Data Exchange (ETDEWEB)

    Da Vià, Cinzia, E-mail: cinzia.da.via@cern.ch [School of Physics and Astronomy, The University of Manchester, Oxford Road, M13 9PL Manchester (United Kingdom); Boscardil, Maurizio [Fondazione Bruno Kessler, FBK-CMM, Via Sommarive 18, I-38123 Trento (Italy); Dalla Betta, GianFranco [DISI, Università degli Studi di Trento and INFN, Via Sommarive 14, I-38123 Trento (Italy); Darbo, Giovanni [INFN Sezione di Genova, Via Dodecaneso 33, I-14146 Genova (Italy); Fleta, Celeste [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona E-08193 (Spain); Gemme, Claudia [INFN Sezione di Genova, Via Dodecaneso 33, I-14146 Genova (Italy); Giacomini, Gabriele [Fondazione Bruno Kessler, FBK-CMM, Via Sommarive 18, I-38123 Trento (Italy); Grenier, Philippe [SLAC National Accelerator Laboratory, 2575 Sand Hill Rd, Menlo Park, CA 94025 (United States); Grinstein, Sebastian [Institut de Fisica d' Altes Energies (IFAE) and ICREA, Universitat Autonoma de Barcelona (UAB) E-08193, Bellaterra, Barcelona (Spain); Hansen, Thor-Erik [SINTEF MiNaLab, Blindern, N-0314 Oslo (Norway); Hasi, Jasmine; Kenney, Christopher [SLAC National Accelerator Laboratory, 2575 Sand Hill Rd, Menlo Park, CA 94025 (United States); Kok, Angela [SINTEF MiNaLab, Blindern, N-0314 Oslo (Norway); La Rosa, Alessandro [CERN CH 1211, Geneva 23 (Switzerland); Micelli, Andrea [Tne University of Udine and INFN, via del Cotonificio 108, 33100 Udine (Italy); Parker, Sherwood [University of Hawaii, c/o Lawrence Berkeley Laboratory, Berkeley, CA 94720 (United States); Pellegrini, Giulio [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona E-08193 (Spain); Pohl, David-Leon [Physikalisches Institut der Universität Bonn, Nußallee 12 D-53115, Bonn, Federal Republic of Germany (Germany); Povoli, Marco [DISI, Università degli Studi di Trento and INFN, Via Sommarive 14, I-38123 Trento (Italy); and others

    2013-01-21

    3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

  1. High-power ultrashort fiber laser for solar cells micromachining

    Science.gov (United States)

    Lecourt, J.-B.; Duterte, C.; Liegeois, F.; Lekime, D.; Hernandez, Y.; Giannone, D.

    2012-02-01

    We report on a high-power ultra-short fiber laser for thin film solar cells micromachining. The laser is based on Chirped Pulse Amplification (CPA) scheme. The pulses are stretched to hundreds of picoseconds prior to amplification and can be compressed down to picosecond at high energy. The repetition rate is adjustable from 100 kHz to 1 MHz and the optical average output power is close to 13 W (before compression). The whole setup is fully fibred, except the compressor achieved with bulk gratings, resulting on a compact and reliable solution for cold ablation.

  2. Numerical modelling of micro-machining of f.c.c. single crystal: Influence of strain gradients

    KAUST Repository

    Demiral, Murat; Roy, Anish; El Sayed, Tamer S.; Silberschmidt, Vadim V.

    2014-01-01

    of orthogonal micro-machining of f.c.c. single crystal copper was developed. The model was implemented in a commercial software ABAQUS/Explicit employing a user-defined subroutine VUMAT. Strain-gradient crystal-plasticity and conventional crystal

  3. Laser micromachining of sputtered DLC films

    International Nuclear Information System (INIS)

    Fu, Y.Q.; Luo, J.K.; Flewitt, A.J.; Ong, S.E.; Zhang, S.; Milne, W.I.

    2006-01-01

    DLC films with different thicknesses (from 100 nm to 1.9 μm) were deposited using sputtering of graphite target in pure argon atmosphere without substrate heating. Film microstructures (sp 2 /sp 3 ratio) and mechanical properties (modulus, hardness, stress) were characterized as a function of film thickness. A thin layer of aluminum about 60 nm was deposited on the DLC film surface. Laser micromachining of Al/DLC layer was performed to form microcantilever structures, which were released using a reactive ion etching system with SF 6 plasma. Due to the intrinsic stress in DLC films and bimorph Al/DLC structure, the microcantilevers bent up with different curvatures. For DLC film of 100 nm thick, the cantilever even formed microtubes. The relationship between the bimorph beam bending and DLC film properties (such as stress, modulus, etc.) were discussed in details

  4. Fabrication of Micromachined SnO2 Based MOS Gas Sensor with Inbuilt Microheater for Detection of Methanol

    Directory of Open Access Journals (Sweden)

    Priyanka Kakoty

    2016-09-01

    Full Text Available This paper presents a simple method to fabricate a vertical closed membrane structured gas sensor on silicon substrate using micromachining technology for methanol detection at lower concentration. An undoped tin dioxide thin film is deposited by DC magnetron sputtering technique on a pair of gold interdigitated microelectrodes of dimension 820 µm ´ 925 µm. A meander shaped platinum micro heater of dimension 1025 µm ´ 1000 µm is incorporated to provide optimum operating temperature (about 350 0C for sensing operation. Energy dispersive X-ray spectroscopy is done to confirm the chemical composition of the sensor. Temperature coefficient of resistance of the inbuilt micro heater is found to be 0.0941 /0C. The sensor resistance shows significant change when micro heater voltage is varied from 1.5 V-3 V. I-V analysis of the sensor is carried out at 25 0C, 50 0C and 75 0C, and shifts in current through the sensor at different temperatures are observed. I-V characterization is also carried out at different methanol concentration levels (50-110 ppm and it is found that at minimum 80 ppm, the sensor exhibits promising result. The response time and recovery time of the sensor is found to be 160 s and 167 s respectively.

  5. Graphene-on-silicon hybrid plasmonic-photonic integrated circuits.

    Science.gov (United States)

    Xiao, Ting-Hui; Cheng, Zhenzhou; Goda, Keisuke

    2017-06-16

    Graphene surface plasmons (GSPs) have shown great potential in biochemical sensing, thermal imaging, and optoelectronics. To excite GSPs, several methods based on the near-field optical microscope and graphene nanostructures have been developed in the past few years. However, these methods suffer from their bulky setups and low GSP-excitation efficiency due to the short interaction length between free-space vertical excitation light and the atomic layer of graphene. Here we present a CMOS-compatible design of graphene-on-silicon hybrid plasmonic-photonic integrated circuits that achieve the in-plane excitation of GSP polaritons as well as localized surface plasmon (SP) resonance. By employing a suspended membrane slot waveguide, our design is able to excite GSP polaritons on a chip. Moreover, by utilizing a graphene nanoribbon array, we engineer the transmission spectrum of the waveguide by excitation of localized SP resonance. Our theoretical and computational study paves a new avenue to enable, modulate, and monitor GSPs on a chip, potentially applicable for the development of on-chip electro-optic devices.

  6. Nanowire-integrated microporous silicon membrane for continuous fluid transport in micro cooling device

    International Nuclear Information System (INIS)

    So, Hongyun; Pisano, Albert P.; Cheng, Jim C.

    2013-01-01

    We report an efficient passive micro pump system combining the physical properties of nanowires and micropores. This nanowire-integrated microporous silicon membrane was created to feed coolant continuously onto the surface of the wick in a micro cooling device to ensure it remains hydrated and in case of dryout, allow for regeneration of the system. The membrane was fabricated by photoelectrochemical etching to form micropores followed by hydrothermal growth of nanowires. This study shows a promising approach to address thermal management challenges for next generation electronic devices with absence of external power

  7. Effects of plasma-deposited silicon nitride passivation on the radiation hardness of CMOS integrated circuits

    International Nuclear Information System (INIS)

    Clement, J.J.

    1980-01-01

    The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. The hardness degradation is manifested by increased radiation-induced threshold voltage shifts caused principally by the charging of new interface states and, to a lesser extent, by the trapping of holes created upon exposure to ionizing radiation. The threshold voltage shifts are a strong function of the deposition temperature, and show very little dependence on thickness for films deposited at 300 0 C. There is some correlation between the threshold voltage shifts and the hydrogen content of the PECVD silicon nitride films used as the final passivation layer as a function of deposition temperature. The mechanism by which the hydrogen contained in these films may react with the Si/SiO 2 interface is not clear at this point

  8. Review of piezoelectric micromachined ultrasonic transducers and their applications

    International Nuclear Information System (INIS)

    Jung, Joontaek; Lee, Wonjun; Kang, Woojin; Shin, Eunjung; Choi, Hongsoo; Ryu, Jungho

    2017-01-01

    In recent decades, micromachined ultrasonic transducers (MUTs) have been investigated as an alternative to conventional piezocomposite ultrasonic transducers, primarily due to the advantages that microelectromechanical systems provide. Miniaturized ultrasonic systems require ultrasonic transducers integrated with complementary metal-oxide-semiconductor circuits. Hence, piezoelectric MUTs (pMUTs) and capacitive MUTs (cMUTs) have been developed as the most favorable solutions. This paper reviews the basic equations to understand the characteristics of thin-film-based piezoelectric devices and presents recent research on pMUTs, including current approaches and limitations. Methods to improve the coupling coefficient of pMUTs are also investigated, such as device structure, materials, and fabrication techniques. The device structure improvements include multielectrode pMUTs, partially clamped boundary conditions, and 3D pMUTs (curved and domed types), where the latter can provide an electromechanical coupling coefficient of up to 45%. The piezoelectric coefficient ( e 31 ) can be increased by controlling the crystal texture (seed layer of γ -Al 2 O 3 ), using single-crystal (PMN-PT) materials, or control of residual stresses (using SiO 2 layer). Arrays of pMUTs can be implemented for various applications including intravascular ultrasound, fingerprint sensors, rangefinders in air, and wireless power supply systems. pMUTs are expected to be an ideal solution for applications such as mobile biometric security (fingerprint sensors) and rangefinders due to their superior power efficiency and compact size. (topical review)

  9. Review of piezoelectric micromachined ultrasonic transducers and their applications

    Science.gov (United States)

    Jung, Joontaek; Lee, Wonjun; Kang, Woojin; Shin, Eunjung; Ryu, Jungho; Choi, Hongsoo

    2017-11-01

    In recent decades, micromachined ultrasonic transducers (MUTs) have been investigated as an alternative to conventional piezocomposite ultrasonic transducers, primarily due to the advantages that microelectromechanical systems provide. Miniaturized ultrasonic systems require ultrasonic transducers integrated with complementary metal-oxide-semiconductor circuits. Hence, piezoelectric MUTs (pMUTs) and capacitive MUTs (cMUTs) have been developed as the most favorable solutions. This paper reviews the basic equations to understand the characteristics of thin-film-based piezoelectric devices and presents recent research on pMUTs, including current approaches and limitations. Methods to improve the coupling coefficient of pMUTs are also investigated, such as device structure, materials, and fabrication techniques. The device structure improvements include multielectrode pMUTs, partially clamped boundary conditions, and 3D pMUTs (curved and domed types), where the latter can provide an electromechanical coupling coefficient of up to 45%. The piezoelectric coefficient (e 31) can be increased by controlling the crystal texture (seed layer of γ-Al2O3), using single-crystal (PMN-PT) materials, or control of residual stresses (using SiO2 layer). Arrays of pMUTs can be implemented for various applications including intravascular ultrasound, fingerprint sensors, rangefinders in air, and wireless power supply systems. pMUTs are expected to be an ideal solution for applications such as mobile biometric security (fingerprint sensors) and rangefinders due to their superior power efficiency and compact size.

  10. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  11. Micromachined Ultrasonic Transducers for 3-D Imaging

    DEFF Research Database (Denmark)

    Christiansen, Thomas Lehrmann

    of state-of-the-art 3-D ultrasound systems. The focus is on row-column addressed transducer arrays. This previously sparsely investigated addressing scheme offers a highly reduced number of transducer elements, resulting in reduced transducer manufacturing costs and data processing. To produce...... such transducer arrays, capacitive micromachined ultrasonic transducer (CMUT) technology is chosen for this project. Properties such as high bandwidth and high design flexibility makes this an attractive transducer technology, which is under continuous development in the research community. A theoretical...... treatment of CMUTs is presented, including investigations of the anisotropic plate behaviour and modal radiation patterns of such devices. Several new CMUT fabrication approaches are developed and investigated in terms of oxide quality and surface protrusions, culminating in a simple four-mask process...

  12. Development of deep silicon plasma etching for 3D integration technology

    Directory of Open Access Journals (Sweden)

    Golishnikov А. А.

    2014-02-01

    Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

  13. The role of Triton surfactant in anisotropic etching of {1 1 0} reflective planes on (1 0 0) silicon

    Science.gov (United States)

    Resnik, Drago; Vrtacnik, Danilo; Aljancic, Uros; Mozek, Matej; Amon, Slavko

    2005-06-01

    Etching characteristics and properties of {1 1 0} silicon crystal planes used as 45° optical mirrors for deflecting optical beams from/to optical fibers were investigated. Fiber aligning grooves and passive mirror-like planes were realized by wet micromachining of (1 0 0) silicon in KOH IPA and TMAH IPA systems. Implementation of Triton-x-100 surfactant as an additive to 25% TMAH in anisotropic etching of {1 1 0} silicon passive mirror planes is reported and discussed. It was found that Triton-x-100 contents in the range of 10 200 ppm to the 25% TMAH water etchant significantly increase the anisotropy mostly by decreasing the {1 1 0} etch rate and retaining the {1 0 0} etch rate. It is also shown that {1 1 0} surface roughness is substantially improved compared to two other etching systems. Furthermore, efficient convex corner underetching reduction is demonstrated. The results of optical characterization of passive mirrors with 632 nm incident light show reduced scattering of reflected optical beam due to improved microroughness for mirrors made by TMAH Triton. For the reflection of the optical beam with 1.33 µm and 1.54 µm wavelengths, sputtered layer of gold is used as reflective coating on silicon mirrors thus increasing the reflected optical beam intensity by an additional 8%.

  14. Integrated Lens Antennas for Multi-Pixel Receivers

    Science.gov (United States)

    Lee, Choonsup; Chattopadhyay, Goutam

    2011-01-01

    Future astrophysics and planetary experiments are expected to require large focal plane arrays with thousands of detectors. Feedhorns have excellent performance, but their mass, size, fabrication challenges, and expense become prohibitive for very large focal plane arrays. Most planar antenna designs produce broad beam patterns, and therefore require additional elements for efficient coupling to the telescope optics, such as substrate lenses or micromachined horns. An antenna array with integrated silicon microlenses that can be fabricated photolithographically effectively addresses these issues. This approach eliminates manual assembly of arrays of lenses and reduces assembly errors and tolerances. Moreover, an antenna array without metallic horns will reduce mass of any planetary instrument significantly. The design has a monolithic array of lens-coupled, leaky-wave antennas operating in the millimeter- and submillimeter-wave frequencies. Electromagnetic simulations show that the electromagnetic fields in such lens-coupled antennas are mostly confined in approximately 12 15 . This means that one needs to design a small-angle sector lens that is much easier to fabricate using standard lithographic techniques, instead of a full hyper-hemispherical lens. Moreover, this small-angle sector lens can be easily integrated with the antennas in an array for multi-pixel imager and receiver implementation. The leaky antenna is designed using double-slot irises and fed with TE10 waveguide mode. The lens implementation starts with a silicon substrate. Photoresist with appropriate thickness (optimized for the lens size) is spun on the substrate and then reflowed to get the desired lens structure. An antenna array integrated with individual lenses for higher directivity and excellent beam profile will go a long way in realizing multi-pixel arrays and imagers. This technology will enable a new generation of compact, low-mass, and highly efficient antenna arrays for use in multi

  15. Fabrication of surface micromachined ain piezoelectric microstructures and its potential apllication to rf resonators

    NARCIS (Netherlands)

    Saravanan, S.; Saravanan, S.; Berenschot, Johan W.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt

    2005-01-01

    We report on a novel microfabrication method to fabricate aluminum nitride (AlN) piezoelectric microstructures down to 2 microns size by a surface micromachining process. Highly c-axis oriented AlN thin films are deposited between thin Cr electrodes on polysilicon structural layers by rf reactive

  16. Data Transmission and Thermo-Optic Tuning Performance of Dielectric-Loaded Plasmonic Structures Hetero-Integrated on a Silicon Chip

    DEFF Research Database (Denmark)

    Giannoulis, G.; Kalavrouziotis, D.; Apostolopoulos, D.

    2012-01-01

    We demonstrate experimental evidence of the data capture and the low-energy thermo-optic tuning credentials of dielectric-loaded plasmonic structures integrated on a silicon chip. We show 7-nm thermo-optical tuning of a plasmonic racetrack-resonator with less than 3.3 mW required electrical power...

  17. Quantum Coherent States and Path Integral Method to Stochastically Determine the Anisotropic Volume Expansion in Lithiated Silicon Nanowires

    Directory of Open Access Journals (Sweden)

    Donald C. Boone

    2017-10-01

    Full Text Available This computational research study will analyze the multi-physics of lithium ion insertion into a silicon nanowire in an attempt to explain the electrochemical kinetics at the nanoscale and quantum level. The electron coherent states and a quantum field version of photon density waves will be the joining theories that will explain the electron-photon interaction within the lithium-silicon lattice structure. These two quantum particles will be responsible for the photon absorption rate of silicon atoms that are hypothesized to be the leading cause of breaking diatomic silicon covalent bonds that ultimately leads to volume expansion. It will be demonstrated through the combination of Maxwell stress tensor, optical amplification and path integrals that a stochastic analyze using a variety of Poisson distributions that the anisotropic expansion rates in the <110>, <111> and <112> orthogonal directions confirms the findings ascertained in previous works made by other research groups. The computational findings presented in this work are similar to those which were discovered experimentally using transmission electron microscopy (TEM and simulation models that used density functional theory (DFT and molecular dynamics (MD. The refractive index and electric susceptibility parameters of lithiated silicon are interwoven in the first principle theoretical equations and appears frequently throughout this research presentation, which should serve to demonstrate the importance of these parameters in the understanding of this component in lithium ion batteries.

  18. A low hydraulic capacitance pressure sensor for integration with a micro viscosity detector

    NARCIS (Netherlands)

    van der Heyden, F.H.J.; Blom, M.T.; Gardeniers, Johannes G.E.; Chmela, E.; Elwenspoek, Michael Curt; Tijssen, R.P; van den Berg, Albert

    2003-01-01

    A design is presented for a micromachined differential viscometer, that is suitable for integration into a planar hydrodynamic chromatography system (HDC) for polymer analysis. The viscometer consists of four equal flow restrictions and two pressure sensors, connected in a Wheatstone bridge

  19. A Novel Piezo-Actuator-Sensor Micromachine for Mechanical Characterization of Micro-Specimens

    Directory of Open Access Journals (Sweden)

    Leila Ladani

    2010-12-01

    Full Text Available Difficulties associated with testing and characterization of materials at microscale demands for new technologies and devices that are capable of measuring forces and strains at microscale. To address this issue, a novel electroactive-based micro-electro-mechanical machine is designed. The micromachine is comprised of two electroactive (piezoelectric micro-elements mounted on a rigid frame. Electrical activation of one of the elements causes it to expand and induce a stress in the intervening micro-specimen. The response of the microspecimen to the stress is measured by the deformation and thereby voltage/resistance induced in the second electro-active element. The concept is theoretically proven using analytical modeling in conjunction with non-linear, three dimensional finite element analyses for the micromachine. Correlation of the output voltage to the specimen stiffness is shown. It is also demonstrated through finite element and analytical analysis that this technique is capable of detecting non-linear behavior of materials. A characteristic curve for an isotropic specimen exhibiting linear elastic behavior is developed. Application of the proposed device in measuring coefficient of thermal expansion is explored and analytical analysis is conducted.

  20. Study and characterization of an integrated circuit-deposited hydrogenated amorphous silicon sensor for the detection of particles and radiations

    International Nuclear Information System (INIS)

    Despeisse, M.

    2006-03-01

    Next generation experiments at the European laboratory of particle physics (CERN) require particle detector alternatives to actual silicon detectors. This thesis presents a novel detector technology, which is based on the deposition of a hydrogenated amorphous silicon sensor on top of an integrated circuit. Performance and limitations of this technology have been assessed for the first time in this thesis in the context of particle detectors. Specific integrated circuits have been designed and the detector segmentation, the interface sensor-chip and the sensor leakage current have been studied in details. The signal induced by the track of an ionizing particle in the sensor has been characterized and results on the signal speed, amplitude and on the sensor resistance to radiation are presented. The results are promising regarding the use of this novel technology for radiation detection, though limitations have been shown for particle physics application. (author)

  1. Synthesis and structure of large single crystalline silver hexagonal microplates suitable for micromachining

    Energy Technology Data Exchange (ETDEWEB)

    Lyutov, Dimitar L.; Genkov, Kaloyan V.; Zyapkov, Anton D.; Tsutsumanova, Gichka G.; Tzonev, Atanas N. [Department of Solid State Physics and Microelectronics, Faculty of Physics, University of Sofia, 5, J. Bouchier Blvd, Sofia (Bulgaria); Lyutov, Lyudmil G. [Department of General and Inorganic Chemistry, Faculty of Chemistry, University of Sofia, 1, J. Bouchier Blvd, Sofia (Bulgaria); Russev, Stoyan C., E-mail: scr@phys.uni-sofia.bg [Department of Solid State Physics and Microelectronics, Faculty of Physics, University of Sofia, 5, J. Bouchier Blvd, Sofia (Bulgaria)

    2014-01-15

    We report a simple one-step synthesis method of large single crystalline Ag (111) hexagonal microplates with sharp edges and a size of up to tens of microns. Single silver crystals were produced by reduction silver nitrate aqueous solution with 4-(methylamino)phenol sulfate. Scanning and transmission electron microscopy, energy-dispersive X-ray spectroscopy, selected area electron diffraction and optical microscopy techniques were combined to characterize the crystals. It is shown that the microplates can be easily dispersed and transferred as single objects onto different substrates and subsequently used as a high quality plasmonic starting material for micromachining of future nanocomponents, using modern top-down techniques like focused-ion beam milling and gas injection deposition. - Highlights: • Synthesis of large Ag hexagonal microplates with high crystallinity. • It is shown and discussed the role of twinning for the anisotropic 2D growth. • The Ag plates are stable in water and can be dispersed onto different substrates. • Their positioning and subsequent micromachining with FIB/GIS is demonstrated. • Suitable starting material for future plasmonic nanocomponents.

  2. A new approach to integrate PLZT thin films with micro-cantilevers

    Indian Academy of Sciences (India)

    Home; Journals; Sadhana; Volume 34; Issue 4. A new approach to integrate PLZT thin films with micro-cantilevers ... Different types of cantilever beams incorporating PLZT films have been successfully fabricated using 'lift-off' process and bulk micromachining technology. The proposed process can be advantageously ...

  3. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  4. Luneburg lens in silicon photonics.

    Science.gov (United States)

    Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

    2011-03-14

    The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

  5. Waveguide silicon nitride grating coupler

    Science.gov (United States)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  6. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  7. Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

    Science.gov (United States)

    Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

    2007-05-28

    We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

  8. New dynamic silicon photonic components enabled by MEMS technology

    Science.gov (United States)

    Errando-Herranz, Carlos; Edinger, Pierre; Colangelo, Marco; Björk, Joel; Ahmed, Samy; Stemme, Göran; Niklaus, Frank; Gylfason, Kristinn B.

    2018-02-01

    Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

  9. FY1995 development of micromachine technology based on insects; 1995 nendo konchu wo kihan to suru micromachine gijutsu no kakuritsu to jitsuyoka

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    If we develop micromachines by reducing simply the size of conventional mechanical systems, we cannot get sufficient performances of them because of scale-effect. Small natural creatures, insects, have very good structures and functions reasonable for their small size. In this research, basic characteristics of sensors, actuators, information processing functions, etc. of insects are studied and artificial systems similar to them are developed for industrial application. (1) Compound eyes: Insect compound eyes is the visual sensor which is composed of microlenses which are distributed three-dimensionally, receptors which vibrate with small amplitude around an optical axis and neural networks. In this research, the large scale model (several centimeters sized) of insect compound eyes has been developed. (2) Pheromone sensor: Pheromone gas sensor has been made of real male silkworm moth antenae. This sensor has been proved to work well as the female pheromone detector. This sensor was installed at the nose part of a wheeled mobile robot and this robot was observed to act like a real silkworm moth subjected to female pheromone stream. (3) Electrostatic microactuator: Generally speaking, high voltage(higher than 100V) electric power is necessary to actuate the electrostatic actuator. It was considered to be impossible to actuate them directly from CMOS. In this research, a new electrostatic actuator which can be actuated with less than 10V voltage can cause a fairly large displacement. (4) Hydraulic actuator: For micromachines, hydraulic pressure will be applicable for actuation. Structures may be simple and scale effect may give an advantageous characteristics for microsize. A butterfly-type flying robot was developed and it flied up along a vertical bar. (NEDO)

  10. Safely re-integrating silicone breast implants into the plastic surgery practice.

    Science.gov (United States)

    Gladfelter, Joanne

    2006-01-01

    In the early 1990s, it was reported that silicone breast implants were possibly responsible for serious damage to women's health. In January 1992, the Food and Drug Administration issued a voluntary breast implant moratorium and, in April, issued a ban on the use of silicone gel-filled implants for cosmetic breast augmentation. Since that time, silicone gel-filled breast implants have been available to women only for select cases: women seeking breast reconstruction or revision of an existing breast implant, women who have had breast cancer surgery, a severe injury to the breast, a birth defect that affects the breast, or a medical condition causing a severe breast deformity. Since the ban on the use of silicone gel-filled breast implants for cosmetic breast augmentation, numerous scientific studies have been conducted. To ensure patient safety, the American Board of Plastic Surgery believes that these scientific studies and the Food and Drug Administration's scrutiny of silicone gel-filled breast implants have been appropriate and necessary.

  11. High-speed detection at two micrometres with monolithic silicon photodiodes

    Science.gov (United States)

    Ackert, Jason J.; Thomson, David J.; Shen, Li; Peacock, Anna C.; Jessop, Paul E.; Reed, Graham T.; Mashanovich, Goran Z.; Knights, Andrew P.

    2015-06-01

    With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’. A promising solution is to open new spectral regions at wavelengths near 2 μm and to exploit the long-wavelength transmission and amplification capabilities of hollow-core photonic-bandgap fibres and the recently available thulium-doped fibre amplifiers. To date, photodetector devices for this window have largely relied on III-V materials or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility. Here, we describe a silicon photodiode operating at 20 Gbit s-1 in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.

  12. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.

    2017-02-07

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  13. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.; Sevilla, Galo T.; Velling, Seneca J.; Cordero, Marlon D.; Hussain, Muhammad Mustafa

    2017-01-01

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  14. Package-friendly piezoresistive pressure sensors with on-chip integrated packaging-stress-suppressed suspension (PS3) technology

    International Nuclear Information System (INIS)

    Wang, Jiachou; Li, Xinxin

    2013-01-01

    An on-chip integrated packaging-stress-suppressed suspension (PS 3 ) technology for a packaging-stress-free pressure sensor is proposed and developed. With a MIS (microholes interetch and sealing) micromachining process implemented only from the front-side of a single-side polished (1 1 1) silicon wafer, a compact cantilever-shaped PS 3 is on-chip integrated surrounding a piezoresistive pressure-sensing structure to provide a packaging-process/substrate-friendly method for low-cost but high-performance sensor applications. With the MIS process, the chip size of the PS 3 -enclosed pressure sensor is as small as 0.8 mm × 0.8 mm. Compared with a normal pressure sensor without PS 3 (but with an identical pressure-sensing structure), the proposed pressure sensor has the same sensitivity of 0.046 mV kPa −1 (3.3 V) −1 . However, without using the thermal compensation technique, a temperature coefficient of offset of only 0.016% °C −1 FS is noted for the sensor with PS 3 , which is about 15 times better than that for the sensor without PS 3 . Featuring effective isolation and elimination of the influence from packaging stress, the PS 3 technique is promising to be widely used for packaging-friendly mechanical sensors. (paper)

  15. High-density oxidized porous silicon

    International Nuclear Information System (INIS)

    Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

    2012-01-01

    We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

  16. Silicon Integrated Dual-Mode Interferometer with Differential Outputs

    Directory of Open Access Journals (Sweden)

    Niklas Hoppe

    2017-09-01

    Full Text Available The dual-mode interferometer (DMI is an attractive alternative to Mach-Zehnder interferometers for sensor purposes, achieving sensitivities to refractive index changes close to state-of-the-art. Modern designs on silicon-on-insulator (SOI platforms offer thermally stable and compact devices with insertion losses of less than 1 dB and high extinction ratios. Compact arrays of multiple DMIs in parallel are easy to fabricate due to the simple structure of the DMI. In this work, the principle of operation of an integrated DMI with differential outputs is presented which allows the unambiguous phase shift detection with a single wavelength measurement, rather than using a wavelength sweep and evaluating the optical output power spectrum. Fluctuating optical input power or varying attenuation due to different analyte concentrations can be compensated by observing the sum of the optical powers at the differential outputs. DMIs with two differential single-mode outputs are fabricated in a 250 nm SOI platform, and corresponding measurements are shown to explain the principle of operation in detail. A comparison of DMIs with the conventional Mach-Zehnder interferometer using the same technology concludes this work.

  17. Integrated circuits of silicon on insulator S.O.I. technologies: State of the art and perspectives

    International Nuclear Information System (INIS)

    Leray, J.L.; Dupont-Nivet, E.; Raffaelli, M.; Coic, Y.M.; Musseau, O.; Pere, J.F.; Lalande, P.; Bredy, J.; Auberton-Herve, A.J.; Bruel, M.; Giffard, B.

    1989-01-01

    Silicon On Insulator technologies have been proposed to increase the integrated circuits performances in radiation operation. Active researches are conducted, in France and abroad. This paper reviews briefly radiation effects phenomenology in that particular type of structure S.O.I. New results are presented that show very good radiation behaviour in term of speed, dose (10 to 100 megarad (Si)), dose rate and S.E.U. performances [fr

  18. Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor

    Energy Technology Data Exchange (ETDEWEB)

    Gidon, Pierre; Giffard, Benoit; Moussy, Norbert; Parrein, Pascale; Poupinet, Ludovic [CEA-LETI, MINATEC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2010-03-15

    We present theoretical simulation and experimental results of a new colour pixel structure. This pixel catches the light in three stacked amorphous silicon photodiodes encompassed between transparent electrodes. The optical structure has been simulated for signal optimisation. The thickness of each stacked layer is chosen in order to absorb the maximum of light and the three signals allow to linearly calculate the CIE colour coordinates 1 with minimum error and noise. The whole process is compatible with an above integrated circuit (IC) approach. Each photodiode is an n-i-p structure. For optical reason, the upper diode must be controlled down to 25 nm thickness. The first test pixel structure allows a good recovering of colour coordinates. The measured absorption spectrum of each photodiode is in good agreement with our simulations. This specific stack with three photodiodes per pixel totalises two times more signal than an above IC pixel under a standard Bayer pattern 2,3. In each square of this GretagMacbeth chart is the reference colour on the right and the experimentally measured colour on the left with three amorphous silicon photodiodes per pixel. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  19. Miniaturized Ultrasound Imaging Probes Enabled by CMUT Arrays with Integrated Frontend Electronic Circuits

    Science.gov (United States)

    Khuri-Yakub, B. (Pierre) T.; Oralkan, Ömer; Nikoozadeh, Amin; Wygant, Ira O.; Zhuang, Steve; Gencel, Mustafa; Choe, Jung Woo; Stephens, Douglas N.; de la Rama, Alan; Chen, Peter; Lin, Feng; Dentinger, Aaron; Wildes, Douglas; Thomenius, Kai; Shivkumar, Kalyanam; Mahajan, Aman; Seo, Chi Hyung; O’Donnell, Matthew; Truong, Uyen; Sahn, David J.

    2010-01-01

    Capacitive micromachined ultrasonic transducer (CMUT) arrays are conveniently integrated with frontend integrated circuits either monolithically or in a hybrid multichip form. This integration helps with reducing the number of active data processing channels for 2D arrays. This approach also preserves the signal integrity for arrays with small elements. Therefore CMUT arrays integrated with electronic circuits are most suitable to implement miniaturized probes required for many intravascular, intracardiac, and endoscopic applications. This paper presents examples of miniaturized CMUT probes utilizing 1D, 2D, and ring arrays with integrated electronics. PMID:21097106

  20. Strained silicon as a new electro-optic material

    DEFF Research Database (Denmark)

    Jacobsen, Rune Shim; Andersen, Karin Nordström; Borel, Peter Ingo

    2006-01-01

    For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized1, 2. The slow progress within silicon optoelectronics, where electronic and optical...... functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon3. Recently, however, a continuous-wave Raman silicon laser was demonstrated4; if an effective modulator could also be realized in silicon, data...... processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top...

  1. High surface area silicon materials: fundamentals and new technology.

    Science.gov (United States)

    Buriak, Jillian M

    2006-01-15

    Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

  2. Plasmonic nanofocusing of light in an integrated silicon photonics platform.

    Science.gov (United States)

    Desiatov, Boris; Goykhman, Ilya; Levy, Uriel

    2011-07-04

    The capability to focus electromagnetic energy at the nanoscale plays an important role in nanoscinece and nanotechnology. It allows enhancing light matter interactions at the nanoscale with applications related to nonlinear optics, light emission and light detection. It may also be used for enhancing resolution in microscopy, lithography and optical storage systems. Hereby we propose and experimentally demonstrate the nanoscale focusing of surface plasmons by constructing an integrated plasmonic/photonic on chip nanofocusing device in silicon platform. The device was tested directly by measuring the optical intensity along it using a near-field microscope. We found an order of magnitude enhancement of the intensity at the tip's apex. The spot size is estimated to be 50 nm. The demonstrated device may be used as a building block for "lab on a chip" systems and for enhancing light matter interactions at the apex of the tip.

  3. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  4. Process for forming a porous silicon member in a crystalline silicon member

    Science.gov (United States)

    Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

    1999-01-01

    Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

  5. "Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

    Science.gov (United States)

    Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

    2013-04-01

    During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

  6. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto; Sevilla, Galo T.; Ghoneim, Mohamed T.; Inayat, Salman Bin; Ahmed, Sally; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2014-01-01

    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100

  7. Rectangular-cladding silicon slot waveguide with improved nonlinear performance

    Science.gov (United States)

    Huang, Zengzhi; Huang, Qingzhong; Wang, Yi; Xia, Jinsong

    2018-04-01

    Silicon slot waveguides have great potential in hybrid silicon integration to realize nonlinear optical applications. We propose a rectangular-cladding hybrid silicon slot waveguide. Simulation result shows that, with a rectangular-cladding, the slot waveguide can be formed by narrower silicon strips, so the two-photon absorption (TPA) loss in silicon is decreased. When the cladding material is a nonlinear polymer, the calculated TPA figure of merit (FOMTPA) is 4.4, close to the value of bulk nonlinear polymer of 5.0. This value confirms the good nonlinear performance of rectangular-cladding silicon slot waveguides.

  8. Materials and integration schemes for above-IC integrated optics

    NARCIS (Netherlands)

    Schmitz, Jurriaan; Rangarajan, B.; Kovalgin, Alexeij Y.

    2014-01-01

    A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon

  9. Low surface damage dry etched black silicon

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt

    2017-01-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface dam...

  10. Analysis of asymmetric resonance response of thermally excited silicon micro-cantilevers for mass-sensitive nanoparticle detection

    Science.gov (United States)

    Bertke, Maik; Hamdana, Gerry; Wu, Wenze; Suryo Wasisto, Hutomo; Uhde, Erik; Peiner, Erwin

    2017-06-01

    In this paper, the asymmetric resonance frequency (f 0) responses of thermally in-plane excited silicon cantilevers for a pocket-sized, cantilever-based airborne nanoparticle detector (Cantor) are analysed. By measuring the shift of f 0 caused by the deposition of nanoparticles (NPs), the cantilevers are used as a microbalance. The cantilever sensors are low cost manufactured from silicon by bulk-micromachining techniques and contain an integrated p-type heating actuator and a sensing piezoresistive Wheatstone bridge. f 0 is tracked by a homemade phase-locked loop (PPL) for real-time measurements. To optimize the sensor performance, a new cantilever geometry was designed, fabricated and characterized by its frequency responses. The most significant characterisation parameters of our application are f 0 and the quality factor (Q), which have high influences on sensitivity and efficiency of the NP detector. Regarding the asymmetric resonance signal, a novel fitting function based on the Fano resonance replacing the conventionally used function of the simple harmonic oscillator and a method to calculate Q by its fitting parameters were developed for a quantitative evaluation. To obtain a better understanding of the resonance behaviours, we analysed the origin of the asymmetric line shapes. Therefore, we compared the frequency response of the on-chip thermal excitation with an external excitation using an in-plane piezo actuator. In correspondence to the Fano effect, we could reconstruct the measured resonance curves by coupling two signals with constant amplitude and the expected signal of the cantilever, respectively. Moreover, the phase of the measurement signal can be analysed by this method, which is important to understand the locking process of the PLL circuit. Besides the frequency analysis, experimental results and calibration measurements with different particle types are presented. Using the described analysis method, decent results to optimize a next

  11. Simulation of the Mitra 15 micro-machine on IBM 360/91. Microprogramming of the fast Fourier transform

    International Nuclear Information System (INIS)

    Augustides, Jean

    1973-01-01

    As computing time did not allow working in real time, and as different methods had been proposed to reduce the computing time (the Cooley-Tuckey method, the use of specific FFT processors), this thesis proposes an intermediate solution, between the entirely programmed solution and the entirely cabled solution. After some generalities on micro-programming (definition, history, benefits and drawbacks, perspectives), the author reports the micro-programming of the Mitra 15 micro-machine: description of the machine, memory, command memory and associated circuits, interruptions and suspensions, descriptions of micro-statements, execution of a micro-statement. Programs and subroutines developed for the modelling of Mitra 15 micro-machine on IBM 360/91 are presented. Then, the author reports the micro-programming of the fast Fourier transform: theory, program description, and test

  12. Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

    Directory of Open Access Journals (Sweden)

    M. Cihan Çakır

    2016-09-01

    Full Text Available Metal oxide gas sensors with integrated micro-hotplate structures are widely used in the industry and they are still being investigated and developed. Metal oxide gas sensors have the advantage of being sensitive to a wide range of organic and inorganic volatile compounds, although they lack selectivity. To introduce selectivity, the operating temperature of a single sensor is swept, and the measurements are fed to a discriminating algorithm. The efficiency of those data processing methods strongly depends on temperature uniformity across the active area of the sensor. To achieve this, hot plate structures with complex resistor geometries have been designed and additional heat-spreading structures have been introduced. In this work we designed and fabricated a metal oxide gas sensor integrated with a simple square planar indium tin oxide (ITO heating element, by using conventional micromachining and thin-film deposition techniques. Power consumption–dependent surface temperature measurements were performed. A 420 °C working temperature was achieved at 120 mW power consumption. Temperature distribution uniformity was measured and a 17 °C difference between the hottest and the coldest points of the sensor at an operating temperature of 290 °C was achieved. Transient heat-up and cool-down cycle durations are measured as 40 ms and 20 ms, respectively.

  13. Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors.

    Science.gov (United States)

    Çakır, M Cihan; Çalışkan, Deniz; Bütün, Bayram; Özbay, Ekmel

    2016-09-29

    Metal oxide gas sensors with integrated micro-hotplate structures are widely used in the industry and they are still being investigated and developed. Metal oxide gas sensors have the advantage of being sensitive to a wide range of organic and inorganic volatile compounds, although they lack selectivity. To introduce selectivity, the operating temperature of a single sensor is swept, and the measurements are fed to a discriminating algorithm. The efficiency of those data processing methods strongly depends on temperature uniformity across the active area of the sensor. To achieve this, hot plate structures with complex resistor geometries have been designed and additional heat-spreading structures have been introduced. In this work we designed and fabricated a metal oxide gas sensor integrated with a simple square planar indium tin oxide (ITO) heating element, by using conventional micromachining and thin-film deposition techniques. Power consumption-dependent surface temperature measurements were performed. A 420 °C working temperature was achieved at 120 mW power consumption. Temperature distribution uniformity was measured and a 17 °C difference between the hottest and the coldest points of the sensor at an operating temperature of 290 °C was achieved. Transient heat-up and cool-down cycle durations are measured as 40 ms and 20 ms, respectively.

  14. Effects of Micromachining Processes on Electro-Osmotic Flow Mobility of Glass Surfaces

    Directory of Open Access Journals (Sweden)

    Norihisa Miki

    2013-03-01

    Full Text Available Silica glass is frequently used as a device material for micro/nano fluidic devices due to its excellent properties, such as transparency and chemical resistance. Wet etching by hydrofluoric acid and dry etching by neutral loop discharge (NLD plasma etching are currently used to micromachine glass to form micro/nano fluidic channels. Electro-osmotic flow (EOF is one of the most effective methods to drive liquids into the channels. EOF mobility is affected by a property of the micromachined glass surfaces, which includes surface roughness that is determined by the manufacturing processes. In this paper, we investigate the effect of micromaching processes on the glass surface topography and the EOF mobility. We prepared glass surfaces by either wet etching or by NLD plasma etching, investigated the surface topography using atomic force microscopy, and attempted to correlate it with EOF generated in the micro-channels of the machined glass. Experiments revealed that the EOF mobility strongly depends on the surface roughness, and therefore upon the fabrication process used. A particularly strong dependency was observed when the surface roughness was on the order of the electric double layer thickness or below. We believe that the correlation described in this paper can be of great help in the design of micro/nano fluidic devices.

  15. Silicon Carbide Power Devices and Integrated Circuits

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan; Samsel, Isaak; LaBel, Ken; Chen, Yuan; Ikpe, Stanley; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

    2017-01-01

    An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.

  16. Capacitive micromachined ultrasonic transducer arrays as tunable acoustic metamaterials

    Energy Technology Data Exchange (ETDEWEB)

    Lani, Shane W., E-mail: shane.w.lani@gmail.com, E-mail: karim.sabra@me.gatech.edu, E-mail: levent.degertekin@me.gatech.edu; Sabra, Karim G. [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 801Ferst Drive, Georgia 30332-0405 (United States); Wasequr Rashid, M.; Hasler, Jennifer [School of Electrical and Computer Engineering, Georgia Institute of Technology, Van Leer Electrical Engineering Building, 777 Atlantic Drive NW, Atlanta, Georgia 30332-0250 (United States); Levent Degertekin, F. [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 801Ferst Drive, Georgia 30332-0405 (United States); School of Electrical and Computer Engineering, Georgia Institute of Technology, Van Leer Electrical Engineering Building, 777 Atlantic Drive NW, Atlanta, Georgia 30332-0250 (United States)

    2014-02-03

    Capacitive Micromachined Ultrasonic Transducers (CMUTs) operating in immersion support dispersive evanescent waves due to the subwavelength periodic structure of electrostatically actuated membranes in the array. Evanescent wave characteristics also depend on the membrane resonance which is modified by the externally applied bias voltage, offering a mechanism to tune the CMUT array as an acoustic metamaterial. The dispersion and tunability characteristics are examined using a computationally efficient, mutual radiation impedance based approach to model a finite-size array and realistic parameters of variation. The simulations are verified, and tunability is demonstrated by experiments on a linear CMUT array operating in 2-12 MHz range.

  17. Ultrasonic actuation for MEMS dormancy-related stiction reduction

    Science.gov (United States)

    Kaajakari, Ville; Kan, Shyi-Herng; Lin, Li-Jen; Lal, Amit; Rodgers, M. Steven

    2000-08-01

    The use of ultrasonic pulses incident on surface micromachines has been shown to reduce dormancy-related failure. We applied ultrasonic pulses from the backside of a silicon substrate carrying SUMMiT processed surface micromachined rotors, used earlier as ultrasonic motors. The amplitude of the pulses was less than what is required to actuate the rotor (sub-threshold actuation). By controlling the ultrasonic pulse exposure time it was found that pulsed samples had smaller actuation voltages as compared to non-pulsed samples after twelve-hour dormancy. This result indicates that the micromachine stiction to surfaces during dormant period can be effectively eliminated, resulting in long-term stability of surface micromachines in critical applications.

  18. Research Update: Phonon engineering of nanocrystalline silicon thermoelectrics

    Directory of Open Access Journals (Sweden)

    Junichiro Shiomi

    2016-10-01

    Full Text Available Nanocrystalline silicon thermoelectrics can be a solution to improve the cost-effectiveness of thermoelectric technology from both material and integration viewpoints. While their figure-of-merit is still developing, recent advances in theoretical/numerical calculations, property measurements, and structural synthesis/fabrication have opened up possibilities to develop the materials based on fundamental physics of phonon transport. Here, this is demonstrated by reviewing a series of works on nanocrystalline silicon materials using calculations of multiscale phonon transport, measurements of interfacial heat conduction, and synthesis from nanoparticles. Integration of these approaches allows us to engineer phonon transport to improve the thermoelectric performance by introducing local silicon-oxide structures.

  19. Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures

    Energy Technology Data Exchange (ETDEWEB)

    Bolotov, V. V.; Knyazev, E. V.; Ponomareva, I. V.; Kan, V. E., E-mail: kan@obisp.oscsbras.ru; Davletkildeev, N. A.; Ivlev, K. E.; Roslikov, V. E. [Russian Academy of Sciences, Omsk Scientific Center, Siberian Branch (Russian Federation)

    2017-01-15

    The oxidation of mesoporous silicon in a double-layer “macroporous silicon–mesoporous silicon” structure is studied. The morphology and dielectric properties of the buried insulating layer are investigated using electron microscopy, ellipsometry, and electrical measurements. Specific defects (so-called spikes) are revealed between the oxidized macropore walls in macroporous silicon and the oxidation crossing fronts in mesoporous silicon. It is found that, at an initial porosity of mesoporous silicon of 60%, three-stage thermal oxidation leads to the formation of buried silicon-dioxide layers with an electric-field breakdown strength of E{sub br} ~ 10{sup 4}–10{sup 5} V/cm. Multilayered “porous silicon-on-insulator” structures are shown to be promising for integrated chemical micro- and nanosensors.

  20. Surface thiolation of silicon for antifouling application.

    Science.gov (United States)

    Zhang, Xiaoning; Gao, Pei; Hollimon, Valerie; Brodus, DaShan; Johnson, Arion; Hu, Hongmei

    2018-02-07

    Thiol groups grafted silicon surface was prepared as previously described. 1H,1H,2H,2H-perfluorodecanethiol (PFDT) molecules were then immobilized on such a surface through disulfide bonds formation. To investigate the contribution of PFDT coating to antifouling, the adhesion behaviors of Botryococcus braunii (B. braunii) and Escherichia coli (E. coli) were studied through biofouling assays in the laboratory. The representative microscope images suggest reduced B. braunii and E. coli accumulation densities on PFDT integrated silicon substrate. However, the antifouling performance of PFDT integrated silicon substrate decreased over time. By incubating the aged substrate in 10 mM TCEP·HCl solution for 1 h, the fouled PFDT coating could be removed as the disulfide bonds were cleaved, resulting in reduced absorption of algal cells and exposure of non-fouled silicon substrate surface. Our results indicate that the thiol-terminated substrate can be potentially useful for restoring the fouled surface, as well as maximizing the effective usage of the substrate.

  1. Silicon Nanowires for All-Optical Signal Processing in Optical Communication

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Ji, Hua

    2012-01-01

    Silicon (Si), the second most abundant element on earth, has dominated in microelectronics for many decades. It can also be used for photonic devices due to its transparency in the range of optical telecom wavelengths which will enable a platform for a monolithic integration of optics...... and microelectronics. Silicon photonic nanowire waveguides fabricated on silicon-on-insulator (SOI) substrates are crucial elements in nano-photonic integrated circuits. The strong light confinement in nanowires induced by high index contrast SOI material enhances the nonlinear effects in the silicon nanowire core...... such as four-wave mixing (FWM) which is an imperative process for optical signal processing. Since the current mature silicon fabrication technology enables a precise dimension control on nanowires, dispersion engineering can be performed by tailoring nanowire dimensions to realize an efficient nonlinear...

  2. Optimized design of micromachined electric field mills to maximize electrostatic field sensitivity

    OpenAIRE

    Zhou, Yu; Shafai, Cyrus

    2016-01-01

    This paper describes the design optimization of a micromachined electric field mill, in relation to maximizing its output signal. The cases studied are for a perforated electrically grounded shutter vibrating laterally over sensing electrodes. It is shown that when modeling the output signal of the sensor, the differential charge on the sense electrodes when exposed to vs. visibly shielded from the incident electric field must be considered. Parametric studies of device dimensions show that t...

  3. 3D packaging of a microfluidic system with sensory applications

    Science.gov (United States)

    Morrissey, Anthony; Kelly, Gerard; Alderman, John C.

    1997-09-01

    Among the main benefits of microsystem technology are its contributions to cost reductio, reliability and improved performance. however, the packaging of microsystems, and particularly microsensor, has proven to be one of the biggest limitations to their commercialization and the packaging of silicon sensor devices can be the most costly part of their fabrication. This paper describes the integration of 3D packaging of a microsystem. Central to the operation of the 3D demonstrator is a micromachined silicon membrane pump to supply fluids to a sensing chamber constructed about the active area of a sensor chip. This chip carries ISFET based chemical sensors, pressure sensors and thermal sensors. The electronics required for controlling and regulating the activity of the various sensors ar also available on this chip and as other chips in the 3D assembly. The demonstrator also contains a power supply module with optical fiber interconnections. All of these modules are integrated into a single plastic- encapsulated 3D vertical multichip module. The reliability of such a structure, initially proposed by Val was demonstrated by Barrett et al. An additional module available for inclusion in some of our assemblies is a test chip capable of measuring the packaging-induced stress experienced during and after assembly. The packaging process described produces a module with very high density and utilizes standard off-the-shelf components to minimize costs. As the sensor chip and micropump include micromachined silicon membranes and microvalves, the packaging of such structures has to allow consideration for the minimization of the packaging-induced stresses. With this in mind, low stress techniques, including the use of soft glob-top materials, were employed.

  4. 3D Printed Microtransporters: Compound Micromachines for Spatiotemporally Controlled Delivery of Therapeutic Agents.

    Science.gov (United States)

    Huang, Tian-Yun; Sakar, Mahmut Selman; Mao, Angelo; Petruska, Andrew J; Qiu, Famin; Chen, Xue-Bo; Kennedy, Stephen; Mooney, David; Nelson, Bradley J

    2015-11-01

    Functional compound micromachines are fabricated by a design methodology using 3D direct laser writing and selective physical vapor deposition of magnetic materials. Microtransporters with a wirelessly controlled Archimedes screw pumping mechanism are engineered. Spatiotemporally controlled collection, transport, and delivery of micro particles, as well as magnetic nanohelices inside microfluidic channels are demonstrated. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Project in fiscal 2000 of developing international standards for supporting new industries. Standardization of method for evaluating characteristics measurement for micromachine materials; 2000 nendo shinki sangyo shiengata kokusai hyojun kaihatsu jigyo seika hokokusho. Micro machine yo zairyo no tokusei keisoku hyoka hoho no hyojunka

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Targeting the international standardization of the method for evaluating properties measurement for micro-machine materials, R and D has been performed on measurement and evaluation of mechanical properties of different thin film materials with a thickness of about 10 {mu}m or less and a width of 100 {mu}m or less. This paper summarizes the achievements in fiscal 2000. The current fiscal year has executed tensile tests of thin film materials for micro-machines, and surveys on technological trends related to the standardization thereof inside and outside the country. A working process was developed to manufacture test pieces of the thin film materials including mono-crystalline silicon for the purpose of executing the round robin test. Prototype test pieces were fabricated. The round robin test was performed by using these test pieces, wherein improvements were given on the test pieces, structure of the testing machine, the distortion measuring method, and the test piece mounting method. Furthermore, discussions were given on the film forming conditions and the heat treatment conditions with regard to mainly the thin titanium film made by using the sputtering process and thin nickel film made by using the plating process. The IEC/TC47/WG4 committee has announced to propose this evaluation technology as the future international standard. (NEDO)

  6. Integrated optics nano-opto-fluidic sensor based on whispering gallery modes for picoliter volume refractometry

    NARCIS (Netherlands)

    Gilardi, G.; Beccherelli, R.

    2013-01-01

    We propose and numerically investigate an integrated optics refractometric nano-opto-fluidic sensor based on whispering gallery modes in sapphire microspheres. A measurand fluid is injected in a micromachined reservoir defined in between the microsphere and an optical waveguide. The wavelength shift

  7. Fabrication of detectors and transistors on high-resistivity silicon

    International Nuclear Information System (INIS)

    Holland, S.

    1988-06-01

    A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 kΩ/centerreverse arrowdot/cm silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs

  8. Optimization and validation of highly selective microfluidic integrated silicon nanowire chemical sensor

    Science.gov (United States)

    Ehfaed, Nuri. A. K. H.; Bathmanathan, Shillan A. L.; Dhahi, Th S.; Adam, Tijjani; Hashim, Uda; Noriman, N. Z.

    2017-09-01

    The study proposed characterization and optimization of silicon nanosensor for specific detection of heavy metal. The sensor was fabricated in-house and conventional photolithography coupled with size reduction via dry etching process in an oxidation furnace. Prior to heavy metal heavy metal detection, the capability to aqueous sample was determined utilizing serial DI water at various. The sensor surface was surface modified with Organofunctional alkoxysilanes (3-aminopropyl) triethoxysilane (APTES) to create molecular binding chemistry. This has allowed interaction between heavy metals being measured and the sensor component resulting in increasing the current being measured. Due to its, excellent detection capabilities, this sensor was able to identify different group heavy metal species. The device was further integrated with sub-50 µm for chemical delivery.

  9. Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

    Science.gov (United States)

    Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

    2009-01-01

    Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

  10. Additive advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with release-first process

    KAUST Repository

    Ghoneim, Mohamed T.

    2013-11-20

    We report the inherent increase in capacitance per unit planar area of state-of-the art high-κ integrated metal/insulator/metal capacitors (MIMCAPs) fabricated on flexible silicon fabric with release-first process. We methodically study and show that our approach to transform bulk silicon (100) into a flexible fabric adds an inherent advantage of enabling higher integration density dynamic random access memory (DRAM) on the same chip area. Our approach is to release an ultra-thin silicon (100) fabric (25 μm thick) from the bulk silicon wafer, then build MIMCAPs using sputtered aluminium electrodes and successive atomic layer depositions (ALD) without break-ing the vacuum of a high-κ aluminium oxide sandwiched between two tantalum nitride layers. This result shows that we can obtain flexible electronics on silicon without sacrificing the high density integration aspects and also utilize the non-planar geometry associated with fabrication process to obtain a higher integration density compared to bulk silicon integration due to an increased normalized capacitance per unit planar area. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Intracardiac ultrasound scanner using a micromachine (MEMS) actuator.

    Science.gov (United States)

    Zara, J M; Bobbio, S M; Goodwin-Johansson, S; Smith, S W

    2000-01-01

    Catheter-based intracardiac ultrasound offers the potential for improved guidance of interventional cardiac procedures. The objective of this research is the development of catheter-based mechanical sector scanners incorporating high frequency ultrasound transducers operating at frequencies up to 20 MHz. The authors' current transducer assembly consists of a single 1.75 mm by 1.75 mm, 20 MHz, PZT element mounted on a 2 mm by 2 mm square, 75 mum thick polyimide table that pivots on 3-mum thick gold plated polyimide hinges. The hinges also serve as the electrical connections to the transducer. This table-mounted transducer is tilted using a miniature linear actuator to produce a sector scan. This linear actuator is an integrated force array (IFA), which is an example of a micromachine, i.e., a microelectromechanical system (MEMS). The IFA is a thin (2.2 mum) polyimide membrane, which consists of a network of hundreds of thousands of micron scale deformable capacitors made from pairs of metallized polyimide plates. IFAs contract with an applied voltage of 30-120 V and have been shown to produce strains as large as 20% and forces of up to 8 dynes. The prototype transducer and actuator assembly was fabricated and interfaced with a GagePCI analog to digital conversion board digitizing 12 bit samples at a rate of 100 MSamples/second housed in a personal computer to create a single channel ultrasound scanner. The deflection of the table transducer in a low viscosity insulating fluid (HFE 7100, 3M) is up to +/-10 degrees at scan rates of 10-60 Hz. Software has been developed to produce real-time sector scans on the PC monitor.

  12. High-intensity fibre laser design for micro-machining applications

    Science.gov (United States)

    Ortiz-Neria, D. I.; Martinez-Piñón, F.; Hernandez-Escamilla, H.; Alvarez-Chavez, J. A.

    2010-11-01

    This work is focused on the design of a 250W high-intensity continuous-wave fibre optic laser with a 15μm spot size beam and a beam parameter product (BPP) of 1.8 for its use on Laser-assisted Cold Spray process (LCS) in the micro-machining areas. The metal-powder deposition process LCS, is a novel method based on Cold Spray technique (CS) assisted by laser technology. The LCS accelerates metal powders by the use of a high-pressure gas in order to achieve flash welding of particles over substrate. In LCS, the critical velocity of impact is lower with respect with CS while the powder particle is heated before the deposition by a laser beam. Furthermore, LCS does not heat the powder to achieve high temperatures as it happens in plasma processes. This property puts aside cooling problems which normally happen in sintered processes with high oxygen/nitrogen concentration levels. LCS will be used not only in deposition of thin layers. After careful design, proof of concept, experimental data, and prototype development, it should be feasible to perform micro-machining precise work with the use of the highintensity fibre laser presented in this work, and selective deposition of particles, in a similar way to the well-known Direct Metal Laser Sintering process (DMLS). The fibre laser consists on a large-mode area, Yb3+-doped, semi-diffraction limited, 25-m fibre laser cavity, operating in continuous wave regime. The fibre shows an arguably high slope-efficiency with no signs of roll-over. The measured M2 value is 1.8 and doping concentration of 15000ppm. It was made with a slight modification of the traditional MCVD technique. A full optical characterization will be presented.

  13. Silicon-integrated thin-film structure for electro-optic applications

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick Joseph

    2000-01-01

    A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

  14. Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

    KAUST Repository

    Bahabry, Rabab R.

    2017-11-30

    The solar cells market has an annual growth of more than 30 percent over the past 15 years. At the same time, the cost of the solar modules diminished to meet both of the rapid global demand and the technological improvements. In particular for the crystalline silicon solar cells, the workhorse of this technology. The objective of this doctoral thesis is enhancing the efficiency of c-Si solar cells while exploring the cost reduction via innovative techniques. Contact metallization and ultra-flexible wafer based c-Si solar cells are the main areas under investigation. First, Silicon-based solar cells typically utilize screen printed Silver (Ag) metal contacts which affect the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used for the front contact grid lines. In this work, investigation of the microstructure and the electrical characteristics of nickel monosilicide (NiSi) ohmic contacts on the rear side of c-Si solar cells has been carried out. Significant enhancement in the fill factor leading to increasing the total power conversion efficiency is observed. Second, advanced classes of modern application require a new generation of versatile solar cells showcasing extreme mechanical resilience. However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption with less active Si material. Here, a complementary metal oxide semiconductor (CMOS) technology based integration strategy is designed where corrugation architecture to enable an ultra-flexible solar cell module from bulk mono-crystalline silicon solar wafer with 17% efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness and achieves flexibility via interdigitated back contacts. These cells

  15. Efficient generation of single and entangled photons on a silicon photonic integrated chip

    International Nuclear Information System (INIS)

    Mower, Jacob; Englund, Dirk

    2011-01-01

    We present a protocol for generating on-demand, indistinguishable single photons on a silicon photonic integrated chip. The source is a time-multiplexed spontaneous parametric down-conversion element that allows optimization of single-photon versus multiphoton emission while realizing high output rate and indistinguishability. We minimize both the scaling of active elements and the scaling of active element loss with multiplexing. We then discuss detection strategies and data processing to further optimize the procedure. We simulate an improvement in single-photon-generation efficiency over previous time-multiplexing protocols, assuming existing fabrication capabilities. We then apply this system to generate heralded Bell states. The generation efficiency of both nonclassical states could be increased substantially with improved fabrication procedures.

  16. Effect of preliminary annealing of silicon substrates on the spectral sensitivity of photodetectors in bipolar integrated circuits

    International Nuclear Information System (INIS)

    Blynskij, V.I.; Bozhatkin, O.A.; Golub, E.S.; Lemeshevskaya, A.M.; Shvedov, S.V.

    2010-01-01

    We examine the results of an effect of preliminary annealing on the spectral sensitivity of photodetectors in bipolar integrated circuits, formed in silicon grown by the Czochralski method. We demonstrate the possibility of substantially improving the sensitivity of photodetectors in the infrared region of the spectrum with twostep annealing. The observed effect is explained by participation of oxidation in the gettering process, where oxidation precedes formation of a buried n + layer in the substrate. (authors)

  17. Material synthesis for silicon integrated-circuit applications using ion implantation

    Science.gov (United States)

    Lu, Xiang

    As devices scale down into deep sub-microns, the investment cost and complexity to develop more sophisticated device technologies have increased substantially. There are some alternative potential technologies, such as silicon-on-insulator (SOI) and SiGe alloys, that can help sustain this staggering IC technology growth at a lower cost. Surface SiGe and SiGeC alloys with germanium peak composition up to 16 atomic percent are formed using high-dose ion implantation and subsequent solid phase epitaxial growth. RBS channeling spectra and cross-sectional TEM studies show that high quality SiGe and SiGeC crystals with 8 atomic percent germanium concentration are formed at the silicon surface. Extended defects are formed in SiGe and SiGeC with 16 atomic percent germanium concentration. X-ray diffraction experiments confirm that carbon reduces the lattice strain in SiGe alloys but without significant crystal quality improvement as detected by RBS channeling spectra and XTEM observations. Separation by plasma implantation of oxygen (SPIMOX) is an economical method for SOI wafer fabrication. This process employs plasma immersion ion implantation (PIII) for the implantation of oxygen ions. The implantation rate for Pm is considerably higher than that of conventional implantation. The feasibility of SPIMOX has been demonstrated with successful fabrication of SOI structures implementing this process. Secondary ion mass spectrometry (SIMS) analysis and cross-sectional transmission electron microscopy (XTEM) micrographs of the SPIMOX sample show continuous buried oxide under single crystal overlayer with sharp silicon/oxide interfaces. The operational phase space of implantation condition, oxygen dose and annealing requirement has been identified. Physical mechanisms of hydrogen induced silicon surface layer cleavage have been investigated using a combination of microscopy and hydrogen profiling techniques. The evolution of the silicon cleavage phenomenon is recorded by a series

  18. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  19. Integration Science and Technology of Silicon-Based Ceramics and Composites:Technical Challenges and Opportunities

    Science.gov (United States)

    Singh, M.

    2013-01-01

    Ceramic integration technologies enable hierarchical design and manufacturing of intricate ceramic and composite parts starting with geometrically simpler units that are subsequently joined to themselves and/or to metals to create components with progressively higher levels of complexity and functionality. However, for the development of robust and reliable integrated systems with optimum performance for high temperature applications, detailed understanding of various thermochemical and thermomechanical factors is critical. Different technical approaches are required for the integration of ceramic to ceramic and ceramic to metal systems. Active metal brazing, in particular, is a simple and cost-effective method to integrate ceramic to metallic components. Active braze alloys usually contain a reactive filler metal (e.g., Ti, Cr, V, Hf etc) that promotes wettability and spreading by inducing chemical reactions with the ceramics and composites. In this presentation, various examples of brazing of silicon nitride to themselves and to metallic systems are presented. Other examples of joining of ceramic composites (C/SiC and SiC/SiC) using ceramic interlayers and the resulting microstructures are also presented. Thermomechanical characterization of joints is presented for both types of systems. In addition, various challenges and opportunities in design, fabrication, and testing of integrated similar (ceramic-ceramic) and dissimilar (ceramic-metal) material systems will be discussed. Potential opportunities and need for the development of innovative design philosophies, approaches, and integrated system testing under simulated application conditions will also be presented.

  20. Environmental sensors based on micromachined cantilevers with integrated read-out

    DEFF Research Database (Denmark)

    Boisen, Anja; Thaysen, Jacob; Jensenius, Henriette

    2000-01-01

    -out facilitates measurements in liquid. The probe has been successfully implemented in gaseous as well as in liquid experiments. For example, the probe has been used as an accurate and minute thermal sensor and as a humidity sensor. In liquid, the probe has been used to detect the presence of alcohol in water. (C......An AFM probe with integrated piezoresistive read-out has been developed and applied as a cantilever-based environmental sensor. The probe has a built-in reference cantilever, which makes it possible to subtract background drift directly in the measurement. Moreover, the integrated read...