WorldWideScience

Sample records for silicon micromachined integrated

  1. Micromachined silicon seismic transducers

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G.; Sniegowski, J.J.; Armour, D.L.; Fleming, R.P.

    1995-08-01

    Batch-fabricated silicon seismic transducers could revolutionize the discipline of CTBT monitoring by providing inexpensive, easily depolyable sensor arrays. Although our goal is to fabricate seismic sensors that provide the same performance level as the current state-of-the-art ``macro`` systems, if necessary one could deploy a larger number of these small sensors at closer proximity to the location being monitored in order to compensate for lower performance. We have chosen a modified pendulum design and are manufacturing prototypes in two different silicon micromachining fabrication technologies. The first set of prototypes, fabricated in our advanced surface- micromachining technology, are currently being packaged for testing in servo circuits -- we anticipate that these devices, which have masses in the 1--10 {mu}g range, will resolve sub-mG signals. Concurrently, we are developing a novel ``mold`` micromachining technology that promises to make proof masses in the 1--10 mg range possible -- our calculations indicate that devices made in this new technology will resolve down to at least sub-{mu}G signals, and may even approach to 10{sup {minus}10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

  2. Micromachined silicon seismic accelerometer development

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G.; Montague, S. [and others

    1996-08-01

    Batch-fabricated silicon seismic transducers could revolutionize the discipline of seismic monitoring by providing inexpensive, easily deployable sensor arrays. Our ultimate goal is to fabricate seismic sensors with sensitivity and noise performance comparable to short-period seismometers in common use. We expect several phases of development will be required to accomplish that level of performance. Traditional silicon micromachining techniques are not ideally suited to the simultaneous fabrication of a large proof mass and soft suspension, such as one needs to achieve the extreme sensitivities required for seismic measurements. We have therefore developed a novel {open_quotes}mold{close_quotes} micromachining technology that promises to make larger proof masses (in the 1-10 mg range) possible. We have successfully integrated this micromolding capability with our surface-micromachining process, which enables the formation of soft suspension springs. Our calculations indicate that devices made in this new integrated technology will resolve down to at least sub-{mu}G signals, and may even approach the 10{sup -10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

  3. Micromachined silicon cantilevers with integrated high-frequency magnetoimpedance sensors for simultaneous strain and magnetic field detection

    Science.gov (United States)

    Buettel, G.; Joppich, J.; Hartmann, U.

    2017-12-01

    Giant magnetoimpedance (GMI) measurements in the high-frequency regime utilizing a coplanar waveguide with an integrated Permalloy multilayer and micromachined on a silicon cantilever are reported. The fabrication process is described in detail. The aspect ratio of the magnetic multilayer in the magnetoresistive and magnetostrictive device was varied. Tensile strain and compressive strain were applied. Vector network analyzer measurements in the range from the skin effect to ferromagnetic resonance confirm the technological potential of GMI-based micro-electro-mechanical devices for strain and magnetic field sensing applications. The strain-impedance gauge factor was quantified by finite element strain calculations and reaches a maximum value of almost 200.

  4. Integrated mold/surface-micromachining process

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G.; Montague, S.; Sniegowski, J.J.; Hetherington, D.L.

    1996-03-01

    We detail a new monolithically integrated silicon mold/surface-micromachining process which makes possible the fabrication of stiff, high-aspect-ratio micromachined structures integrated with finely detailed, compliant structures. An important example, which we use here as our process demonstration vehicle, is that of an accelerometer with a large proof mass and compliant suspension. The proof mass is formed by etching a mold into the silicon substrate, lining the mold with oxide, filling it with mechanical polysilicon, and then planarizing back to the level of the substrate. The resulting molded structure is recessed into the substrate, forming a planar surface ideal for subsequent processing. We then add surface-micromachined springs and sense contacts. The principal advantage of this new monolithically integrated mold/surface-micromachining process is that it decouples the design of the different sections of the device: In the case of a sensitive accelerometer, it allows us to optimize independently the proof mass, which needs to be as large, stiff, and heavy as possible, and the suspension, which needs to be as delicate and compliant as possible. The fact that the high-aspect-ratio section of the device is embedded in the substrate enables the monolithic integration of high-aspect-ratio parts with surface-micromachined mechanical parts, and, in the future, also electronics. We anticipate that such an integrated mold/surface micromachining/electronics process will offer versatile high-aspect-ratio micromachined structures that can be batch-fabricated and monolithically integrated into complex microelectromechanical systems.

  5. Silicon-micromachined microchannel plates

    Energy Technology Data Exchange (ETDEWEB)

    Beetz, Charles P. E-mail: NanoSystem@aol.com; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R. E-mail: winn@fair1.fairfield.edu

    2000-03-11

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of {approx}0.5 to {approx}25 {mu}m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented.

  6. Silicon-micromachined microchannel plates

    Science.gov (United States)

    Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

    2000-03-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ˜0.5 to ˜25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200°C, also compatible with high-temperture brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented.

  7. Silicon-micromachined microchannel plates

    International Nuclear Information System (INIS)

    Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

  8. Laser Micromachining of Glass, Silicon, and Ceramics

    Directory of Open Access Journals (Sweden)

    L. Rihakova

    2015-01-01

    Full Text Available A brief review is focused on laser micromachining of materials. Micromachining of materials is highly widespread method used in many industries, including semiconductors, electronic, medical, and automotive industries, communication, and aerospace. This method is a promising tool for material processing with micron and submicron resolution. In this paper micromachining of glass, silicon, and ceramics is considered. Interaction of these materials with laser radiation and recent research held on laser material treatment is provided.

  9. Silicon Micromachining for Terahertz Component Development

    Science.gov (United States)

    Chattopadhyay, Goutam; Reck, Theodore J.; Jung-Kubiak, Cecile; Siles, Jose V.; Lee, Choonsup; Lin, Robert; Mehdi, Imran

    2013-01-01

    Waveguide component technology at terahertz frequencies has come of age in recent years. Essential components such as ortho-mode transducers (OMT), quadrature hybrids, filters, and others for high performance system development were either impossible to build or too difficult to fabricate with traditional machining techniques. With micromachining of silicon wafers coated with sputtered gold it is now possible to fabricate and test these waveguide components. Using a highly optimized Deep Reactive Ion Etching (DRIE) process, we are now able to fabricate silicon micromachined waveguide structures working beyond 1 THz. In this paper, we describe in detail our approach of design, fabrication, and measurement of silicon micromachined waveguide components and report the results of a 1 THz canonical E-plane filter.

  10. Silicon bulk micromachined hybrid dimensional artifact.

    Energy Technology Data Exchange (ETDEWEB)

    Claudet, Andre A.; Tran, Hy D.; Bauer, Todd Marks; Shilling, Katherine Meghan; Oliver, Andrew David

    2010-03-01

    A mesoscale dimensional artifact based on silicon bulk micromachining fabrication has been developed and manufactured with the intention of evaluating the artifact both on a high precision coordinate measuring machine (CMM) and video-probe based measuring systems. This hybrid artifact has features that can be located by both a touch probe and a video probe system with a k=2 uncertainty of 0.4 {micro}m, more than twice as good as a glass reference artifact. We also present evidence that this uncertainty could be lowered to as little as 50 nm (k=2). While video-probe based systems are commonly used to inspect mesoscale mechanical components, a video-probe system's certified accuracy is generally much worse than its repeatability. To solve this problem, an artifact has been developed which can be calibrated using a commercially available high-accuracy tactile system and then be used to calibrate typical production vision-based measurement systems. This allows for error mapping to a higher degree of accuracy than is possible with a glass reference artifact. Details of the designed features and manufacturing process of the hybrid dimensional artifact are given and a comparison of the designed features to the measured features of the manufactured artifact is presented and discussed. Measurement results from vision and touch probe systems are compared and evaluated to determine the capability of the manufactured artifact to serve as a calibration tool for video-probe systems. An uncertainty analysis for calibration of the artifact using a CMM is presented.

  11. 3DX: a micromachined silicon crystallographic x-ray detector

    Science.gov (United States)

    Morse, John; Kenney, Christopher J.; Westbrook, Edwin M.; Naday, Istvan; Parker, Sherwood I.

    2003-01-01

    We are developing pixel detectors for macromolecular crystallography, in which diffracted X-rays are directly absorbed by high-resistivity, crystalline silicon that has been micro-machined by inductively-coupled plasma etching. Arrays of 64 × 64 holes at 150 μm pitch are first formed by etching through the entire silicon bulk, then backfilled with polysilicon that is doped to create conducting p and n type columnar electrodes. When reverse biased, these electrodes generate electric fields that define the individual pixels. By forming conducting polysilicon on the sides of the sensors, which are cut-out of the silicon wafer by plasma etching, the entire surface of the detector may be made active. CMOS readout integrated circuits are conductively bump bonded behind each 3D detector, providing a direct connection to every pixel. A large array will be assembled with no insensitive bands along the edges by overlapping these sensors, each of area 0.96cm2. This detector will measure X-ray signal intensities of up to 105 events/pixel/sec without any pile-up loss, by using an integration method that retains the benefits of discrete photon counting. The detector sensitivity will be highly uniform, it will not exhibit any dark signal or spurious noise, and no geometric distortion will occur within each sensor.

  12. Silicon Micromachining in RF and Photonic Applications

    Science.gov (United States)

    Lin, Tsen-Hwang; Congdon, Phil; Magel, Gregory; Pang, Lily; Goldsmith, Chuck; Randall, John; Ho, Nguyen

    1995-01-01

    Texas Instruments (TI) has developed membrane and micromirror devices since the late 1970s. An eggcrate space membrane was used as the spatial light modulator in the early years. Discrete micromirrors supported by cantilever beams created a new era for micromirror devices. Torsional micromirror and flexure-beam micromirror devices were promising for mass production because of their stable supports. TI's digital torsional micromirror device is an amplitude modulator (known as the digital micromirror device (DMD) and is in production development, discussed elsewhere. We also use a torsional device for a 4 x 4 fiber-optic crossbar switch in a 2 cm x 2 cm package. The flexure-beam micromirror device is an analog phase modulator and is considered more efficient than amplitude modulators for use in optical processing systems. TI also developed millimeter-sized membranes for integrated optical switches for telecommunication and network applications. Using a member in radio frequency (RF) switch applications is a rapidly growing area because of the micromechanical device performance in microsecond-switching characteristics. Our preliminary membrane RF switch test structure results indicate promising speed and RF switching performance. TI collaborated with MIT for modeling of metal-based micromachining.

  13. Planar silicon fabrication process for high-aspect-ratio micromachined parts

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G. [Sandia National Labs., Albuquerque, NM (United States). Microelectronics Development Lab.

    1997-09-01

    Surface-micromachined silicon inertial sensors are limited to relatively high-G applications in part because of the fundamental limitations on proof mass imposed by the manufacturing technology. At the same time, traditional micromolding technologies such as LIGA do not lend themselves to integration with electronics, a capability which is equally necessary for high-performance inertial sensors. The silicon micromolding processes described in this report promise to offer both larger proof masses and integrability with on-chip electronics. In Sandia`s silicon micromolding process, the proof mass is formed using a mold which is first recessed into the substrate using a deep silicon trench etch, then lined with a sacrificial or etch-stop layer, and filled with mechanical polysilicon. Since the mold is recessed into the substrate, the whole micromechanical structure can be formed, planarized, and integrated with standard silicon microelectronic circuits before the release etch. In addition, unlike surface-micromachined parts, the thickness of the molded parts is limited by the depth of the trench etch (typically 10--50 {micro}m) rather than the thickness of deposited polysilicon (typically 2 {micro}m). The fact that the high-aspect-ratio section of the device is embedded in the substrate enables the monolithic integration of high-aspect-ratio parts with surface-micromachined mechanical parts, and, in the future, also electronics. The authors anticipate that such an integrated mold/surface micromachining/electronics process will offer versatile high-aspect-ratio micromachined structures that can be batch-fabricated and monolithically integrated into complex microelectromechanical systems including high-performance inertial sensing systems.

  14. Separation and Detection of Toxic Gases with a Silicon Micromachined Gas Chromatography System

    Science.gov (United States)

    Kolesar, Edward S.; Reston, Rocky R.

    1995-01-01

    A miniature gas chromatography (GC) system was designed and fabricated using silicon micromachining and integrated circuit (IC) processing techniques. The silicon micromachined gas chromatography system (SMGCS) is composed of a miniature sample injector that incorporates a 10 microliter sample loop; a 0.9 meter long, rectangular shaped (300 micrometer width and 10 micrometer height) capillary column coated with a 0.2 micrometer thick copper phthalocyanine (CuPc) stationary phase; and a dual detector scheme based upon a CuPc-coated chemiresistor and a commercially available 125 micrometer diameter thermal conductivity detector (TCD) bead. Silicon micromachining was employed to fabricate the interface between the sample injector and the GC column, the column itself, and the dual detector cavity. A novel IC thin-film processing technique was developed to sublime the CuPc stationary phase coating on the column walls that were micromachined in the host silicon wafer substrate and Pyrex (r) cover plate, which were then electrostatically bonded together. The SMGCS can separate binary gas mixtures composed of parts-per-million (ppm) concentrations of ammonia (NH3) and nitrogen dioxide (NO2) when isothermally operated (55-80 degrees C). With a helium carrier gas and nitrogen diluent, a 10 microliter sample volume containing ammonia and nitrogen dioxide injected at 40 psi ((2.8 x 10(exp 5)Pa)) can be separated in less than 30 minutes.

  15. Silicon Micromachined Sensor for Broadband Vibration Analysis

    Science.gov (United States)

    Gutierrez, Adolfo; Edmans, Daniel; Cormeau, Chris; Seidler, Gernot; Deangelis, Dave; Maby, Edward

    1995-01-01

    The development of a family of silicon based integrated vibration sensors capable of sensing mechanical resonances over a broad range of frequencies with minimal signal processing requirements is presented. Two basic general embodiments of the concept were designed and fabricated. The first design was structured around an array of cantilever beams and fabricated using the ARPA sponsored multi-user MEMS processing system (MUMPS) process at the Microelectronics Center of North Carolina (MCNC). As part of the design process for this first sensor, a comprehensive finite elements analysis of the resonant modes and stress distribution was performed using PATRAN. The dependence of strain distribution and resonant frequency response as a function of Young's modulus in the Poly-Si structural material was studied. Analytical models were also studied. In-house experimental characterization using optical interferometry techniques were performed under controlled low pressure conditions. A second design, intended to operate in a non-resonant mode and capable of broadband frequency response, was proposed and developed around the concept of a cantilever beam integrated with a feedback control loop to produce a null mode vibration sensor. A proprietary process was used to integrat a metal-oxide semiconductor (MOS) sensing device, with actuators and a cantilever beam, as part of a compatible process. Both devices, once incorporated as part of multifunction data acquisition and telemetry systems will constitute a useful system for NASA launch vibration monitoring operations. Satellite and other space structures can benefit from the sensor for mechanical condition monitoring functions.

  16. Novel silicon fabrication process for high-aspect-ratio micromachined parts

    Energy Technology Data Exchange (ETDEWEB)

    Fleming, J.G.; Barron, C.C.

    1995-08-01

    Bulk micromachining generally refers to processes involving wet chemical etching of structures formed out of the silicon substrate and so is limited to fairly large, crude structures. Surface micromachining allows intricate patterning of thin films of polysilicon and other materials to form essentially two-dimensional layered parts (since the thickness of the parts is limited by the thickness of the deposited films). There is a third type of micromachining in which the part is formed by filling a mold which was defined by photolithographic means. Historically micromachining molds have been formed in some sort of photopolymer, be it with x-ray lithography (``LIGA``) or more conventional UV lithography, with the aim of producing piece parts. Recently, however, several groups including ours at Sandia have independently come up with the idea of forming the mold for mechanical parts by etching into the silicon substrate itself. In Sandia`s mold process, the mold is recessed into the substrate using a deep silicon trench etch, lined with a sacrificial or etch-stop layer, and then filled with any of a number of mechanical materials. The completed structures are not ejected from the mold to be used as piece parts rather, the mold is dissolved from around selected movable segments of the parts, leaving the parts anchored to the substrate. Since the mold is recessed into the substrate, the whole micromechanical structure can be formed, planarized, and integrated with standard silicon microelectronic circuits before the release etch. In addition, unlike surface-micromachined parts, the thickness of the molded parts is limited by the depth of the trench etch (typically 10--50 {mu}m) rather than the thickness of deposited polysilicon (typically 2 {mu}m). The capability of fabricating thicker (and therefore much stiffer and more massive) parts is critical for motion-sensing structures involving large gimballed platforms, proof masses, etc.

  17. Acoustic mode converters micromachined in silicon by proton beam writing

    International Nuclear Information System (INIS)

    Scholz, U.; Menzel, F.; Pluta, M.; Grill, W.; Butz, T.

    2011-01-01

    Proton beam writing is a powerful tool for the production of microstructures for acoustic applications because it allows to create structures inclined to the original sample surface which therefore can act as acoustic mode converters. We report on experiments, finding optimal structure sizes in p-type 12 Ω cm silicon for this purpose. For the creation of the structures the proton beam at the LIPSION laboratory was used. Furthermore, by investigating the micromachined silicon with a phase sensitive acoustic microscope we give evidence that inclined structures such as rods and walls can be used to change the mode of acoustic waves in the crystal.

  18. Micromachining of buried micro channels in silicon

    NARCIS (Netherlands)

    de Boer, Meint J.; Tjerkstra, R.W.; Berenschot, Johan W.; Jansen, Henricus V.; Burger, G.J.; Burger, G.J.; Gardeniers, Johannes G.E.; Elwenspoek, Michael Curt; van den Berg, Albert

    A new method for the fabrication of micro structures for fluidic applications, such as channels, cavities, and connector holes in the bulk of silicon wafers, called buried channel technology (BCT), is presented in this paper. The micro structures are constructed by trench etching, coating of the

  19. Micromachined silicon grisms for infrared optics.

    Science.gov (United States)

    Mar, Douglas J; Marsh, Jasmina P; Deen, Casey P; Ling, Hao; Choo, Hosung; Jaffe, Daniel T

    2009-02-20

    We demonstrate the successful fabrication of large format (approximately 50 mm × 50 mm) gratings in monolithic silicon for use as high-efficiency grisms at infrared wavelengths. The substrates for the grisms were thick (8-16 mm) disks of precisely oriented single-crystal silicon (refractive index, n ~ 3.42). We used microlithography and chemical wet etching techniques to produce the diffraction gratings on one side of these substrates. These techniques permitted the manufacture of coarse grooves (as few as 7 grooves/mm) with precise control of the blaze angle and groove profile and resulted in excellent groove surface quality. Profilometric measurements of the groove structure of the gratings confirm that the physical dimensions of the final devices closely match their design values. Optical performance of these devices exceeds the specifications required for diffraction-limited performance (RMS wave surface error silicon transmits well, the blaze control and high index permit high-resolution, high-order dispersion in a compact space. The first application of these grisms is to provide FORCAST, a mid-infrared camera on NASA's airborne observatory, with a moderate resolution (R=100-1000) spectroscopic capability.

  20. Characterization of a Silicon-Micromachined Thermal Shear-Stress Sensor

    National Research Council Canada - National Science Library

    Sheplak, Mark; Chandrasekaran, Venkataraman; Cain, Anthony; Nishida, Toshikazu; Cattafesta, Louis N

    2002-01-01

    A detailed characterization is presented of a silicon-micromachined thermal shear-stress sensor employing a thin-film platinum-sensing element on top of a silicon-nitride membrane that is stretched over a vacuum cavity...

  1. Characterization of bulk-micromachined direct-bonded silicon nanofilters

    Science.gov (United States)

    Tu, Jay K.; Huen, Tony; Szema, Robert; Ferrari, Mauro

    1998-03-01

    The ability to separate 30-100 nm particles - nanofiltration - is critical for many biomedical applications. Where this filtration needs to be absolute, such as for viral elimination in the blood fractionation process, the large variations in pore size found with conventional polymeric filters can lead to the unwanted presence of viruses in the filtrate. To overcome this problem, we have developed a filter with micromachined channels sandwiched between two bonded silicon wafers. These channels are formed through the selective deposition and then removal of a thermally-grown oxide, the thickness of which can be controlled to +/- 4 percent for 30 nm pores. In this paper, we will present both the gas and liquid characterization, and the filtration studies done on 44 and 100 nm beads.

  2. Integration of Capacitive Micromachined Ultrasound Transducers to Microfluidic Devices

    KAUST Repository

    Viržonis, Darius

    2013-10-22

    The design and manufacturing flexibility of capacitive micromachined ultrasound transducers (CMUT) makes them attractive option for integration with microfluidic devices both for sensing and fluid manipulation. CMUT concept is introduced here by presentin

  3. A micromachined silicon valve driven by a miniature bi-stable electro-magnetic actuator

    NARCIS (Netherlands)

    Bohm, S.; Burger, G.J.; Burger, G.J.; Korthorst, M.T.; Roseboom, F.

    2000-01-01

    In this paper a novel combination of a micromachined silicon valve with low dead volume and a bi-stable electromagnetic actuator produced by conventional machining is presented. The silicon valve part, 7×7×1 mm3 in dimensions, is a sandwich construction of two KOH etched silicon wafers with a layer

  4. Micromachined Integrated Transducers for Ultrasound Imaging

    DEFF Research Database (Denmark)

    la Cour, Mette Funding

    The purpose of this project is to develop capacitive micromachined ultrasonic transducers (CMUTs) for medical imaging. Medical ultrasound transducers used today are fabricated using piezoelectric materials and bulk processing. To fabricate transducers capable of delivering a higher imaging...

  5. Silicon micromachining using a high-density plasma source

    International Nuclear Information System (INIS)

    McAuley, S.A.; Ashraf, H.; Atabo, L.; Chambers, A.; Hall, S.; Hopkins, J.; Nicholls, G.

    2001-01-01

    Dry etching of Si is critical in satisfying the demands of the micromachining industry. The micro-electro-mechanical systems (MEMS) community requires etches capable of high aspect ratios, vertical profiles, good feature size control and etch uniformity along with high throughput to satisfy production requirements. Surface technology systems' (STS's) high-density inductively coupled plasma (ICP) etch tool enables a wide range of applications to be realized whilst optimizing the above parameters. Components manufactured from Si using an STS ICP include accelerometers and gyroscopes for military, automotive and domestic applications. STS's advanced silicon etch (ASE TM ) has also allowed the first generation of MEMS-based optical switches and attenuators to reach the marketplace. In addition, a specialized application for fabricating the next generation photolithography exposure masks has been optimized for 200 mm diameter wafers, to depths of ∼750 μm. Where the profile is not critical, etch rates of greater than 8 μm min -1 have been realized to replace previous methods such as wet etching. This is also the case for printer applications. Specialized applications that require etching down to pyrex or oxide often result in the loss of feature size control at the interface; this is an industry wide problem. STS have developed a technique to address this. The rapid progression of the industry has led to development of the STS ICP etch tool, as well as the process. (author)

  6. Integrated Arrays on Silicon at Terahertz Frequencies

    Science.gov (United States)

    Chattopadhayay, Goutam; Lee, Choonsup; Jung, Cecil; Lin, Robert; Peralta, Alessandro; Mehdi, Imran; Llombert, Nuria; Thomas, Bertrand

    2011-01-01

    In this paper we explore various receiver font-end and antenna architecture for use in integrated arrays at terahertz frequencies. Development of wafer-level integrated terahertz receiver front-end by using advanced semiconductor fabrication technologies and use of novel integrated antennas with silicon micromachining are reported. We report novel stacking of micromachined silicon wafers which allows for the 3-dimensional integration of various terahertz receiver components in extremely small packages which easily leads to the development of 2- dimensioanl multi-pixel receiver front-ends in the terahertz frequency range. We also report an integrated micro-lens antenna that goes with the silicon micro-machined front-end. The micro-lens antenna is fed by a waveguide that excites a silicon lens antenna through a leaky-wave or electromagnetic band gap (EBG) resonant cavity. We utilized advanced semiconductor nanofabrication techniques to design, fabricate, and demonstrate a super-compact, low-mass submillimeter-wave heterodyne frontend. When the micro-lens antenna is integrated with the receiver front-end we will be able to assemble integrated heterodyne array receivers for various applications such as multi-pixel high resolution spectrometer and imaging radar at terahertz frequencies.

  7. Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

    International Nuclear Information System (INIS)

    Yu Xiaomei; Tang Yaquan; Zhang Haitao

    2008-01-01

    This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

  8. Nickel silicide thin films as masking and structural layers for silicon bulk micro-machining by potassium hydroxide wet etching

    International Nuclear Information System (INIS)

    Bhaskaran, M; Sriram, S; Sim, L W

    2008-01-01

    This paper studies the feasibility of using titanium and nickel silicide thin films as mask materials for silicon bulk micro-machining. Thin films of nickel silicide were found to be more resistant to wet etching in potassium hydroxide. The use of nickel silicide as a structural material, by fabricating micro-beams of varying dimensions, is demonstrated. The micro-structures were realized using these thin films with wet etching using potassium hydroxide solution on (1 0 0) and (1 1 0) silicon substrates. These results show that nickel silicide is a suitable alternative to silicon nitride for silicon bulk micro-machining

  9. Micro-machined high capacity silicon load cells

    NARCIS (Netherlands)

    Zwijze, A.F.

    2000-01-01

    The aim of the research presented in this thesis is to improve the performance of high capacity conventional load cells or force sensors by using silicon as the base material. Silicon is used because it offers the possibility of realising small, light, low cost and high performance mechanical

  10. Non-Lithographic Silicon Micromachining Using Inkjet and Chemical Etching

    Directory of Open Access Journals (Sweden)

    Sasha Hoshian

    2016-12-01

    Full Text Available We introduce a non-lithographical and vacuum-free method to pattern silicon. The method combines inkjet printing and metal assisted chemical etching (MaCE; we call this method “INKMAC”. A commercial silver ink is printed on top of a silicon surface to create the catalytic patterns for MaCE. The MaCE process leaves behind a set of silicon nanowires in the shape of the inkjet printed micrometer scale pattern. We further show how a potassium hydroxide (KOH wet etching process can be used to rapidly etch away the nanowires, producing fully opened cavities and channels in the shape of the original printed pattern. We show how the printed lines (width 50–100 µm can be etched into functional silicon microfluidic channels with different depths (10–40 µm with aspect ratios close to one. We also used individual droplets (minimum diameter 30 µm to produce cavities with a depth of 60 µm and an aspect ratio of two. Further, we discuss using the structured silicon substrate as a template for polymer replication to produce superhydrophobic surfaces.

  11. PECVD silicon carbide surface micromachining technology and selected MEMS applications

    NARCIS (Netherlands)

    Rajaraman, V.; Pakula, L.S.; Yang, H.; French, P.J.; Sarro, P.M.

    2011-01-01

    Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with

  12. Two-dimensional capacitive micromachined ultrasonic transducer (CMUT) arrays for a miniature integrated volumetric ultrasonic imaging system

    Science.gov (United States)

    Zhuang, Xuefeng; Wygant, Ira O.; Yeh, David T.; Nikoozadeh, Amin; Oralkan, Omer; Ergun, Arif S.; Cheng, Ching-Hsiang; Huang, Yongli; Yaralioglu, Goksen G.; Khuri-Yakub, Butrus T.

    2005-04-01

    We have designed, fabricated, and characterized two-dimensional 16x16-element capacitive micromachined ultrasonic transducer (CMUT) arrays. The CMUT array elements have a 250-μm pitch, and when tested in immersion, have a 5 MHz center frequency and 99% fractional bandwidth. The fabrication process is based on standard silicon micromachining techniques and therefore has the advantages of high yield, low cost, and ease of integration. The transducers have a Si3N4 membrane and are fabricated on a 400-μm thick silicon substrate. A low parasitic capacitance through-wafer via connects each CMUT element to a flip-chip bond pad on the back side of the wafer. Each through wafer via is 20 μm in diameter and 400 μm deep. The interconnects form metal-insulator-semiconductor (MIS) junctions with the surrounding high-resistivity silicon substrate to establish isolation and to reduce parasitic capacitance. Each through-wafer via has less than 0.06 pF of parasitic capacitance. We have investigated a Au-In flip-chip bonding process to connect the 2D CMUT array to a custom integrated circuit (IC) with transmit and receive electronics. To develop this process, we fabricated fanout structures on silicon, and flip-chip bonded these test dies to a flat surface coated with gold. The average series resistance per bump is about 3 Ohms, and 100% yield is obtained for a total of 30 bumps.

  13. Micromachined Silicon Stimulating Probes with CMOS Circuitry for Use in the Central Nervous System

    Science.gov (United States)

    Tanghe, Steven John

    1992-01-01

    Electrical stimulation in the central nervous system is a valuable technique for studying neural systems and is a key element in the development of prostheses for deafness and other disorders. This thesis presents a family of multielectrode probe structures, fulfilling the need for chronic multipoint stimulation tools essential for interfacing to the highly complex neural networks in the brain. These probes are batch-fabricated on silicon wafers, employing photoengraving techniques to precisely control the electrode site and array geometries and to allow the integration of on-chip CMOS circuitry for signal multiplexing and stimulus current generation. Silicon micromachining is used to define the probe shapes, which have typical shank dimensions of 3 mm in length by 100 mu m in width by 15 μm in thickness. Each shank supports up to eight planar iridium oxide electrode sites capable of delivering charge densities in excess of 3 mC/cm^2 during current pulse stimulation. Three active probe circuits have been designed with varied complexity and capability. All three can deliver biphasic stimulus currents through 16 sites using only 5 external leads, and they are all compatible with the same external control system. The most complex design interprets site addresses and stimulus current amplitudes from 16-bit words shifted into the probe at 4 MHz. Sixteen on-chip, biphasic, 8-bit digital-to-analog converters deliver analog stimulus currents in the range of +/- 254 muA to any combination of electrode sites. These DACs exhibit full-scale internal linearity to better than +/-1/2 LSB and can be calibrated by varying the positive power supply voltage. The entire probe circuit dissipates only 80 muW from +/-5 V supplies when not delivering stimulus currents, it includes several safety features, and is testable from the input pads. Test results from the fabricated circuits indicate that they all function properly at clocking frequencies as high as 10 MHz, meeting or exceeding

  14. Black silicon integrated aperture

    Science.gov (United States)

    Liu, Tianbo; Dickensheets, David L.

    2017-10-01

    This paper describes the incorporation of nanotextured black silicon as an optical absorbing material into silicon-based micro-optoelectromechanical systems devices to reduce stray light and increase optical contrast during imaging. Black silicon is created through a maskless dry etch process and characterized for two different etch conditions, a cold etch performed at 0°C and a cryogenic etch performed at -110°C. We measure specular reflection at visible wavelengths to be black velvet paint used to coat optical baffles and compare favorably with other methods to produce black surfaces from nanotextured silicon or using carbon nanotubes. We illustrate the use of this material by integrating a black silicon aperture around the perimeter of a deformable focus-control mirror. Imaging results show a significant improvement in contrast and image fidelity due to the effective reduction in stray light achieved with the self-aligned black aperture.

  15. Micromachined thin-film sensors for SOI-CMOS co-integration

    CERN Document Server

    Laconte, Jean; Raskin, Jean-Pierre

    2006-01-01

    Co-integration of MEMS and MOS in SOI technology is promising and well demonstrated hereThe impact of Micromachining on SOI devices is deeply analyzed for the first timeInclude extensive TMAH etching, residual stress, microheaters, gas-flow sensors reviewResidual stresses in thin films need to be more and more monitored in MEMS designsTMAH micromachining is an attractive alternative to KOH.

  16. Corporate array of micromachined dipoles on silicon wafer for 60 GHz communication systems

    KAUST Repository

    Sallam, M. O.

    2013-03-01

    In this paper, an antenna array operating at 60 GHz and realized on 0.675 mm thick silicon substrate is presented. The array is constructed using four micromachined half-wavelength dipoles fed by a corporate feeding network. Isolation between the antenna array and its feeding network is achieved via a ground plane. This arrangement leads to maximizing the broadside radiation with relatively high front-to-back ratio. Simulations have been carried out using both HFSS and CST, which showed very good agreement. Results reveal that the proposed antenna array has good radiation characteristics, where the directivity, gain, and radiation efficiency are around 10.5 dBi, 9.5 dBi, and 79%, respectively. © 2013 IEEE.

  17. Modeling the Microstructure Curvature of Boron-Doped Silicon in Bulk Micromachined Accelerometer

    Directory of Open Access Journals (Sweden)

    Xiaoping He

    2013-01-01

    Full Text Available Microstructure curvature, or buckling, is observed in the micromachining of silicon sensors because of the doping of impurities for realizing certain electrical and mechanical processes. This behavior can be a key source of error in inertial sensors. Therefore, identifying the factors that influence the buckling value is important in designing MEMS devices. In this study, the curvature in the proof mass of an accelerometer is modeled as a multilayered solid model. Modeling is performed according to the characteristics of the solid diffusion mechanism in the bulk-dissolved wafer process (BDWP based on the self-stopped etch technique. Moreover, the proposed multilayered solid model is established as an equivalent composite structure formed by a group of thin layers that are glued together. Each layer has a different Young’s modulus value and each undergoes different volume shrinkage strain owing to boron doping in silicon. Observations of five groups of proof mass blocks of accelerometers suggest that the theoretical model is effective in determining the buckling value of a fabricated structure.

  18. Micromachined silicon acoustic delay line with improved structural stability and acoustic directivity for real-time photoacoustic tomography

    Science.gov (United States)

    Cho, Young; Kumar, Akhil; Xu, Song; Zou, Jun

    2017-03-01

    Recent studies have shown that micromachined silicon acoustic delay lines can provide a promising solution to achieve real-time photoacoustic tomography without the need for complex transducer arrays and data acquisition electronics. However, as its length increases to provide longer delay time, the delay line becomes more vulnerable to structural instability due to reduced mechanical stiffness. In addition, the small cross-section area of the delay line results in a large acoustic acceptance angle and therefore poor directivity. To address these two issues, this paper reports the design, fabrication, and testing of a new silicon acoustic delay line enhanced with 3D printed polymer micro linker structures. First, mechanical deformation of the silicon acoustic delay line (with and without linker structures) under gravity was simulated by using finite element method. Second, the acoustic crosstalk and acoustic attenuation caused by the polymer micro linker structures were evaluated with both numerical simulation and ultrasound transmission testing. The result shows that the use of the polymer micro linker structures significantly improves the structural stability of the silicon acoustic delay lines without creating additional acoustic attenuation and crosstalk. In addition, a new tapered design for the input terminal of the delay line was also investigate to improve its acoustic directivity by reducing the acoustic acceptance angle. These two improvements are expected to provide an effective solution to eliminate current limitations on the achievable acoustic delay time and out-of-plane imaging resolution of micromachined silicon acoustic delay line arrays.

  19. Micromachined piezoresistive inclinometer with oscillator-based integrated interface circuit and temperature readout

    Science.gov (United States)

    Dalola, Simone; Ferrari, Vittorio; Marioli, Daniele

    2012-03-01

    In this paper a dual-chip system for inclination measurement is presented. It consists of a MEMS (microelectromechanical system) piezoresistive accelerometer manufactured in silicon bulk micromachining and a CMOS (complementary metal oxide semiconductor) ASIC (application specific integrated circuit) interface designed for resistive-bridge sensors. The sensor is composed of a seismic mass symmetrically suspended by means of four flexure beams that integrate two piezoresistors each to detect the applied static acceleration, which is related to inclination with respect to the gravity vector. The ASIC interface is based on a relaxation oscillator where the frequency and the duty cycle of a rectangular-wave output signal are related to the fractional bridge imbalance and the overall bridge resistance of the sensor, respectively. The latter is a function of temperature; therefore the sensing element itself can be advantageously used to derive information for its own thermal compensation. DC current excitation of the sensor makes the configuration unaffected by wire resistances and parasitic capacitances. Therefore, a modular system results where the sensor can be placed remotely from the electronics without suffering accuracy degradation. The inclination measurement system has been characterized as a function of the applied inclination angle at different temperatures. At room temperature, the experimental sensitivity of the system results in about 148 Hz/g, which corresponds to an angular sensitivity around zero inclination angle of about 2.58 Hz deg-1. This is in agreement with finite element method simulations. The measured output fluctuations at constant temperature determine an equivalent resolution of about 0.1° at midrange. In the temperature range of 25-65 °C the system sensitivity decreases by about 10%, which is less than the variation due to the microsensor alone thanks to thermal compensation provided by the current excitation of the bridge and the positive

  20. Si Micro-turbine by Proton BeamWriting and Porous Silicon Micromachining

    International Nuclear Information System (INIS)

    Rajta, I.; Szilasi, S.Z.; Fekete, Z.

    2008-01-01

    aspect ratio, completely or partially released microelements embedded in a cavity or a channel, thereby enabling us to form mobile components in the microfluidic MEMS. Although the process opens a new way in micromachining, the widening of the implanted regions around the projected range limits the dimensions and the geometry of the processed devices. The described technique can be exploited in fabrication of various MEMS with embedded mobile elements. This work is the first demonstration of a silicon device containing a moving part made by proton beam writing. Acknowledgements The support of the Hungarian National Research Found (OTKA) via grants T047002, A080, M041939, M36324 and F042474; and EU co-funded Economic Competitiveness Operative Programme (GVOP-3.2.1.-2004-04-0402/3.0) is gratefully acknowledged. The authors also thank the contribution of Dr. A.L. Toth with SEM analysis and Mr. B. Forgacs with design and fabrication of plastic encapsulation of the microturbine chip

  1. Micromachined gyroscopes: challenges, design solutions, and opportunities

    Science.gov (United States)

    Shkel, Andrei M.

    2001-08-01

    Micromachined gyroscopes are probably the most challenging type of transducers ever attempted to be designed in micro-world. A nail-size dynamic system integrated with control electronics on the same silicon chip is designed to be a very sensitive sensor which is potentially able to detect maneuvers and motions beyond human perception. Along with exciting opportunities which MEMS gyroscopes could bring to everyday life, the miniaturization introduces many new technical challenges. Multi-degree of freedom dynamics, sensitivity to fabrication imperfections, dynamic instability, limited control resources - all these raise a number of fundamentally challenging issues in the design, analysis, and control of micromachined gyroscopes. In this paper, we summarize principles of operation, review recent research and development efforts, and discuss potential applications and the future market of silicon based micromachined gyroscopes.

  2. Unique Femtosecond Micromachining Methods in Semi-Insulating and Conducting Silicon Carbide (Preprint)

    National Research Council Canada - National Science Library

    Brewer, Chris; Dorsey, Don; Campbell, Angela; Juhl, Shane; DesAutels, G. L; Finet, Marc; Ristich, Scott; Whitaker, Matt; Powers, Peter E; Zhan, Qiwen

    2007-01-01

    ...); a wide bandgap semiconductor material provided by Wright-Patterson AFB AFRL/MLPS. Gratings were micro-machined into these materials using a novel anamorphic lens design and an automated x, y, z linear stage to control the sample position...

  3. Tribological issues of polysilicon surface-micromachining

    Energy Technology Data Exchange (ETDEWEB)

    Sniegowski, J.J.

    1997-12-01

    Polysilicon surface-micromachining is a Micro-Electro-Mechanical Systems (MEMS) manufacturing technology where the infrastructure for manufacturing silicon integrated circuits is used to fabricate micro-miniature mechanical devices. This presentation describes a multi-level mechanical polysilicon surface-micromachining technology and includes a discussion of the issues which affect device manufacture and performance. The multi-level technology was developed and is employed primarily to fabricate microactuated mechanisms. The intricate and complex motion offered by these devices is naturally accompanied by various forms of fraction and wear in addition to the classical stiction phenomena associated with micromechanical device fabrication and usage.

  4. Micromachined droplet ejector arrays

    Science.gov (United States)

    Perçin, Gökhan; Yaralioglu, Göksenin G.; Khuri-Yakub, Butrus T.

    2002-12-01

    In this article we present a micromachined flextensional droplet ejector array used to eject liquids. By placing a fluid behind one face of a vibrating circular plate that has an orifice at its center, we achieve continuous ejection of the fluid. We present results of ejection of water and isopropanol. The ejector is harmless to sensitive fluids and can be used to eject fuels, organic polymers, photoresists, low-k dielectrics, adhesives, and chemical and biological samples. Micromachined two-dimensional array flextensional droplet ejectors were realized using planar silicon micromachining techniques. Typical resonant frequency of the micromachined device ranges from 400 kHz to 4.5 MHz. The ejections of water through a 4 μm diameter orifice at 3.45 MHz and a 10 μm diameter orifice at 2.15 MHz were demonstrated by using the developed micromachined two-dimensional array ejectors.

  5. Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Y.; Fung, S.; Wang, Q.; Horsley, D. A. [Berkeley Sensor and Actuator Center, University of California, Davis, 1 Shields Avenue, Davis, California 95616 (United States); Tang, H.; Boser, B. E. [Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720 (United States); Tsai, J. M.; Daneman, M. [InvenSense, Inc., 1745 Technology Drive, San Jose, California 95110 (United States)

    2015-06-29

    This paper presents an ultrasonic fingerprint sensor based on a 24 × 8 array of 22 MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 μm pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be ∼14 kPa with a 28 V input, in reasonable agreement with predication from analytical calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 × 8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10 mm × 8 mm) at a 1.2 mm distance from the array.

  6. Micromachined silicon acoustic delay line with 3D-printed micro linkers and tapered input for improved structural stability and acoustic directivity

    International Nuclear Information System (INIS)

    Cho, Y; Kumar, A; Xu, S; Zou, J

    2016-01-01

    Recent studies have shown that micromachined silicon acoustic delay lines can provide a promising solution to achieve real-time photoacoustic tomography without the need for complex transducer arrays and data acquisition electronics. To achieve deeper imaging depth and wider field of view, a longer delay time and therefore delay length are required. However, as the length of the delay line increases, it becomes more vulnerable to structural instability due to reduced mechanical stiffness. In this paper, we report the design, fabrication, and testing of a new silicon acoustic delay line enhanced with 3D printed polymer micro linker structures. First, mechanical deformation of the silicon acoustic delay line (with and without linker structures) under gravity was simulated by using finite element method. Second, the acoustic crosstalk and acoustic attenuation caused by the polymer micro linker structures were evaluated with both numerical simulation and ultrasound transmission testing. The result shows that the use of the polymer micro linker structures significantly improves the structural stability of the silicon acoustic delay lines without creating additional acoustic attenuation and crosstalk. In addition, the improvement of the acoustic acceptance angle of the silicon acoustic delay lines was also investigated to better suppress the reception of unwanted ultrasound signals outside of the imaging plane. These two improvements are expected to provide an effective solution to eliminate current limitations on the achievable acoustic delay time and out-of-plane imaging resolution of micromachined silicon acoustic delay line arrays. (paper)

  7. Isotropic etching of silicon in fluoride containing solutions as a tool for micromachining

    OpenAIRE

    Tjerkstra, R.W.

    1999-01-01

    μTAS is hot in micromechanics today. All μTAS devices contain channels to connect the different components together. Channels can also be used as chromatography columns. Isotropic wet chemical etching of silicon can be a suitable process to construct (hemi)circular channels with very smooth surfaces. Wet etching of silicon can be done chemically, using aqueous solutions of HF and HNO , or electrochemically, using aqueous HF solutions. Both processes suffer from the loading-effect: due to extr...

  8. Hybrid Integrated Platforms for Silicon Photonics

    Science.gov (United States)

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  9. A Micromachined Pressure Sensor with Integrated Resonator Operating at Atmospheric Pressure

    Directory of Open Access Journals (Sweden)

    Sen Ren

    2013-12-01

    Full Text Available A novel resonant pressure sensor with an improved micromechanical double-ended tuning fork resonator packaged in dry air at atmospheric pressure is presented. The resonator is electrostatically driven and capacitively detected, and the sensor is designed to realize a low cost resonant pressure sensor with medium accuracy. Various damping mechanisms in a resonator that is vibrating at atmospheric pressure are analyzed in detail, and a formula is developed to predict the overall quality factor. A trade-off has been reached between the quality factor, stress sensitivity and drive capability of the resonator. Furthermore, differential sense elements and the method of electromechanical amplitude modulation are used for capacitive detection to obtain a large signal-to-noise ratio. The prototype sensor chip is successfully fabricated using a micromachining process based on a commercially available silicon-on-insulator wafer and is hermetically encapsulated in a custom 16-pin Kovar package. Preliminary measurements show that the fundamental frequency of the resonant pressure sensor is approximately 34.55 kHz with a pressure sensitivity of 20.77 Hz/kPa. Over the full scale pressure range of 100–400 kPa and the whole temperature range of −20–60 °C, high quality factors from 1,146 to 1,772 are obtained. The characterization of the prototype sensor reveals the feasibility of a resonant pressure sensor packaged at atmospheric pressure.

  10. In-plane diffraction loss free optical cavity using coated optical fiber and silicon micromachined spherical mirror

    Science.gov (United States)

    Sabry, Yasser; Bourouina, Tarik; Saadany, Bassam; Khalil, Diaa

    2013-03-01

    Light trapping in optical cavities has many applications in optical telecommunications, biomedical optics, atomic studies, and chemical analysis. Efficient optical coupling in these cavities is an important engineering problem that affects greatly the cavity performance. One interesting way to form an optical cavity, while simultaneously connected to the rest of the optical systems, is to use an optical fiber surface as one of the cavity mirrors while the second mirror is fabricated by MEMS technology. In this way, cavity tuning with a MEMS actuator is a simple achievable task with low cost in mass production. The main problem in this solution is the high diffraction loss associated with the small spot size at the output of the standard single-mode fiber (SMF). Diffraction loss in the cavity is usually overcome by using an expensive lensed fiber or by inserting a coated lens in the cavity leading to a long cavity with small free spectral range (FSR). In this work, we report a Fabry-Perot cavity formed by a multilayer-coated cleaved-surface SMF inserted into a grove while facing a spherical micromirror; both are fabricated by silicon micromachining. The light is trapped inside the cavity while propagating in-plane of the wafer substrate. The light is injected in and collected from a Corning SMF-28 optical fiber with a coated surface reflectivity of about 98% at 1330 nm (O-band). The silicon mirror surface is aluminum metalized with a reflectivity of about 92%. The measured cavity has a line width of 0.45 nm around 1330 nm with a FSR of 26 nm. The obtained results indicate an almost diffraction-loss free optical cavity with a quality factor close to 3000, limited by the optical surfaces reflectivity that can be improved in future by an optimized mirror fabrication process and better matching of the fiber multilayer coating.

  11. Isotropic etching of silicon in fluoride containing solutions as a tool for micromachining

    NARCIS (Netherlands)

    Tjerkstra, R.W.

    1999-01-01

    μTAS is hot in micromechanics today. All μTAS devices contain channels to connect the different components together. Channels can also be used as chromatography columns. Isotropic wet chemical etching of silicon can be a suitable process to construct (hemi)circular channels with very smooth

  12. Three-dimensional collimation of in-plane-propagating light using silicon micromachined mirror

    Science.gov (United States)

    Sabry, Yasser M.; Khalil, Diaa; Saadany, Bassam; Bourouina, Tarik

    2014-03-01

    We demonstrate light collimation of single-mode optical fibers using deeply-etched three-dimensional curved micromirror on silicon chip. The three-dimensional curvature of the mirror is controlled by a process combining deep reactive ion etching and isotropic etching of silicon. The produced surface is astigmatic with out-of-plane radius of curvature that is about one half the in-plane radius of curvature. Having a 300-μm in-plane radius and incident beam inplane inclined with an angle of 45 degrees with respect to the principal axis, the reflected beam is maintained stigmatic with about 4.25 times reduction in the beam expansion angle in free space and about 12-dB reduction in propagation losses, when received by a limited-aperture detector.

  13. Plasma-enhanced chemical vapor deposition of silicon oxynitride for micromachined millimeter-wave devices

    Science.gov (United States)

    Saadaoui, M.; Peyrou, D.; Achkar, H.; Pennec, F.; Bouscayrol, L.; Rousset, B.; Boyer, P. T.; Scheid, E.; Pons, P.; Plana, R.

    2008-03-01

    Silicon oxynitride films were deposited by plasma-enhanced chemical vapor deposition at low temperature and frequency using SiH4 + NH3 + N2O gas mixtures. The process is optimized in order to deposit film with low tensile stress and high resistance during KOH etching. By increasing the gas flow of nitrous oxide (N2O), the film tends to be oxygen rich and the usual as-deposited high compressive stress is reduced to its lowest state at O/Si = 0.74. Annealing films above 480 °C generates low tensile stress suitable for membrane fabrication, and further infrared spectroscopy analysis shows that the shrinking of Si-O and Si-N bonds seems to be the cause of reversing the stress's nature. Young's modulus of the optimized layer is characterized by indentation. In application, 75 Ω coplanar waveguides (CPW) were fabricated on the top of an oxynitride membrane and characterized in term of insertion loss and effective permittivity. The results were compared to those obtained with the well-controlled bilayer silicon oxide-nitride membrane technology. The obtained losses are lower than 0.2 dB at 30 GHz with a free-space propagation signal.

  14. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  15. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  16. Silicon Micromachined Heterodyne Array Receiver at 1.9 THz Project

    Data.gov (United States)

    National Aeronautics and Space Administration — "We are proposing a new concept of integrated component development technology at submillimeter wavelengths that will dramatically simplify the fabrication,...

  17. A 850 GHz SIS receiver employing silicon micro-machining technology

    Science.gov (United States)

    Kooi, J. W.; Pety, J.; Schaffer, P. L.; Phillips, T. G.; Bumble, B.; LeDuc, H. G.; Walker, C. K.

    1996-01-01

    A 850 GHz superconductor-insulator-superconductor (SIS) heterodyne receiver which uses a radiofrequency tuned niobium tunnel junction fabricated on a 1 micron thick silicon nitrate membrane, is reported. From video and heterodyne measurements, it was calculated that the niobium film loss in the radiofrequency matching network is about 6.8 dB at 822 GHz. These results are approximately a factor of two higher than the theoretical loss predicted by the Mattis-Bardeen theory in the extreme anomalous limit. The junction design and the receiver configuration are described, including the mixer block, the membrane construction and the cooled optics. The performance tests using a Fourier transform spectrometer to measure the response of the radiofrequency matching network, and the SIS simulations of the receiver response to cold and hot loads, the infrared noise contribution and the overall mixer conversion efficiency, are reported. It is concluded that the receiver response is limited by the absorption loss in the radiofrequency matching network.

  18. Removal of endotoxin from deionized water using micromachined silicon nanopore membranes

    International Nuclear Information System (INIS)

    Smith, Ross A; Fissell, William H; Fleischman, Aaron J; Roy, Shuvo; Goldman, Ken; Zorman, Christian A

    2011-01-01

    Endotoxins are lipopolysaccharide components of the cell membrane of Gram-negative bacteria that trigger the body's innate immune system and can cause shock and death. Water for medical therapy, including parenteral and dialysate solutions, must be free of endotoxin. This purity is challenging to achieve as many Gram-negative bacteria are endemic in the environment, and can thrive in harsh, nutrient-poor conditions. Current methods for removing endotoxin include distillation and reverse osmosis, both of which are resource intensive processes. Membranes that present an absolute barrier to macromolecular passage may be capable of delivering pure water for biomedical applications. In this work, endotoxin has been filtered from aqueous solutions using silicon nanopore membranes (SNMs) with monodisperse pore size distributions. SNMs with critical pore sizes between 26 and 49 nm were challenged with solutions of deionized water spiked with endotoxin and with Pseudomonas cepacia. The filtrate produced by the SNM from Pseudomonas-contaminated water had <1.0 endotoxin unit (EU) ml −1 , which meets standards for dialysate purity. This approach suggests a technique for single-step cleanup of heavily contaminated water that may be suitable for field or clinical use

  19. Development of micro capacitive accelerometer for subsurface microseismic measurement. Second Report; Micromachining ni yoru chika danseiha kenshutsu no tame no silicone yoryogata kasokudo sensor no seisaku. 2

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, M.; Lim, G.; Niitsuma, H.; Esashi, M. [Tohoku University, Sendai (Japan)

    1997-10-22

    Micromachining-aided manufacture is under way of a silicon capacitive accelerator sensor, high in sensitivity and broad in bandwidth, for detecting subsurface microseismic waves. The sensor detects acceleration by use of changes in capacities of the top and bottom capacitors generated when a spring-supported weight experiences displacement upon application of acceleration to the said weight. A diode bridge circuit is employed as the circuit for detecting acceleration. As for sensitivity of the sensor, when the virtual noise inputted into the electronic circuit is presumed at 1{mu}V and the circuit driving voltage at 5V, the sensor minimum detectability will be 2.5mgal in the presence of a 3{mu}m gap between the weight and an electrode plate. The natural vibration frequency is set at 1kHz. Such specifications may be realized using the current micromachining technology, and possibilities are that the bandwidth will be further expanded when the sensor is used in a servo-type configuration. The effort is still at the stage of acceleration sensor manufacturing, with a stopper just formed for the silicon weight. 9 refs., 6 figs., 1 tab.

  20. 2D capacitive micromachined ultrasound transducer using novel tiling based on silicon frame

    Science.gov (United States)

    Kim, Youngil; Cho, Kyungil; Kim, Baehyung; Lee, Seungheun; Jeon, Taeho; Song, Jongkeun

    2013-03-01

    In this study, we showed the new transducer and probe integration of 2D ultrasound probe using cMUT. cMUT ultrasound probe having 8192 elements is assembled with tiling frame. Flip chip bonded cMUT-ASIC tiles were arrayed along 2×8 directions to enlarge lateral aperture. Tiling gap between two tiles was under 100μm. RTV layer that has 1mm thick is used in 2-D probe system as a lens and protection layer. Thermal module is also analyzed by using the thermal network analysis, which is realized with the air fans and the fins. Designed PCB circuit for tiling module which is considered with cooling spread concept is 5cm × 5cm dimension. Uniformity and performance of tiled ultrasound transducer were tested under soybean oil at 3MHz frequency successfully. The measured 256 elements distribution has only 4.45% deviation. If we can remove the side edge error, the deviation will be under 3%. The performance after RTV lensing showed 35% attenuation in Tx and 35~45% attenuation in Rx.

  1. A smart fully integrated micromachined separator with soft magnetic micro-pillar arrays for cell isolation

    Science.gov (United States)

    Dong, Tao; Su, Qianhua; Yang, Zhaochu; Zhang, Yulong; Egeland, Eirik B.; Gu, Dan D.; Calabrese, Paolo; Kapiris, Matteo J.; Karlsen, Frank; Minh, Nhut T.; Wang, K.; Jakobsen, Henrik

    2010-11-01

    A smart fully integrated micromachined separator with soft magnetic micro-pillar arrays has been developed and demonstrated, which can merely employ one independent lab-on-chip to realize cell isolation. The simulation, design, microfabrication and test for the new electromagnetic micro separator were executed. The simulation results of the electromagnetic field in the separator show that special soft magnetic micro-pillar arrays can amplify and redistribute the electromagnetic field generated by the micro-coils. The separator can be equipped with a strong magnetic field to isolate the target cells with a considerably low input current. The micro separator was fabricated by micro-processing technology. An electroplating bath was hired to deposit NiCo/NiFe to fabricate the micro-pillar arrays. An experimental system was set up to verify the function of the micro separator by isolating the lymphocytes, in which the human whole blood mixed with Dynabeads® FlowComp Flexi and monoclonal antibody MHCD2704 was used as the sample. The results show that the electromagnetic micro separator with an extremely low input current can recognize and capture the target lymphocytes with a high efficiency, the separation ratio reaching more than 90% at a lower flow rate. For the electromagnetic micro separator, there is no external magnetizing field required, and there is no extra cooling system because there is less Joule heat generated due to the lower current. The magnetic separator is totally reusable, and it can be used to separate cells or proteins with common antigens.

  2. Surface Micromachining Process for the Integration of AlN Piezoelectric Microstructures

    NARCIS (Netherlands)

    Saravanan, S.; Berenschot, Johan W.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt

    2004-01-01

    We report a novel micromachining process to fabricate AlN (Aluminum Nitride) piezoelectric microstructures for actuator applications. Piezoelectric AlN thin films can be grown with (002) preferential orientation by means of RF reactive sputtering on various substrates. For this study, AlN was

  3. Silicon and Glass Micromachining

    NARCIS (Netherlands)

    Carlen, Edwin; Bomer, Johan G.; van Nieuwkasteele, Jan William; van den Berg, Albert; Herold, K.E.; Rasooly, A.

    The past two decades have seen rapid advancement of Lab on a Chip (LOC) systems with applications ranging from gas chromatography to capillary electrophoresis, and more recently to high-pressure chemistry and single cell analysis. For many applications in clinical medicine, biology and chemistry,

  4. Development of micro capacitive accelerometer for subsurface microseismic measurement; Micromachining ni yoru chika danseiha kenshutsu no tame no silicon yoryogata kasokudo sensor no seisaku

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, M.; Niitsuma, H.; Esashi, M. [Tohoku University, Sendai (Japan). Faculty of Engineering

    1997-05-27

    A silicon capacitive accelerometer was fabricated to detect subsurface elastic waves by using micromachining technology. Characteristics required for it call for capability of detecting acceleration with amplitudes from 0.1 to 1 gal and flat amplitude characteristics in frequency bands of 10 Hz to several kHz. For the purpose of measuring transition phenomena, linear phase characteristics in the required bands must be guaranteed, cross sensitivity must be small, and resistance to water, pressure and heat is demanded. Sensitivity of the sensor is determined finally by noise level in a detection circuit. The sensor`s minimum detection capability was 40 mgal in the case of the distance between a weight and an electrode being 3 {mu}m. This specification value is a value realizable by the current micromachining technology. Dimensions for the weight and other members were decided with the natural frequency to make band width 2 kHz set to 4 kHz. Completion of the product has not been achieved yet, however, because of a problem that the weight gets stuck on the electrode plate in anode bonding in the assembly process. 7 refs., 5 figs., 1 tab.

  5. Micro-machined resonator oscillator

    Science.gov (United States)

    Koehler, Dale R.; Sniegowski, Jeffry J.; Bivens, Hugh M.; Wessendorf, Kurt O.

    1994-01-01

    A micro-miniature resonator-oscillator is disclosed. Due to the miniaturization of the resonator-oscillator, oscillation frequencies of one MHz and higher are utilized. A thickness-mode quartz resonator housed in a micro-machined silicon package and operated as a "telemetered sensor beacon" that is, a digital, self-powered, remote, parameter measuring-transmitter in the FM-band. The resonator design uses trapped energy principles and temperature dependence methodology through crystal orientation control, with operation in the 20-100 MHz range. High volume batch-processing manufacturing is utilized, with package and resonator assembly at the wafer level. Unique design features include squeeze-film damping for robust vibration and shock performance, capacitive coupling through micro-machined diaphragms allowing resonator excitation at the package exterior, circuit integration and extremely small (0.1 in. square) dimensioning. A family of micro-miniature sensor beacons is also disclosed with widespread applications as bio-medical sensors, vehicle status monitors and high-volume animal identification and health sensors. The sensor family allows measurement of temperatures, chemicals, acceleration and pressure. A microphone and clock realization is also available.

  6. Acceleration of dormant storage effects to address the reliability of silicon surface micromachined Micro-Electro-Mechanical Systems (MEMS).

    Energy Technology Data Exchange (ETDEWEB)

    Cox, James V.; Candelaria, Sam A.; Dugger, Michael Thomas; Duesterhaus, Michelle Ann; Tanner, Danelle Mary; Timpe, Shannon J.; Ohlhausen, James Anthony; Skousen, Troy J.; Jenkins, Mark W.; Jokiel, Bernhard, Jr.; Walraven, Jeremy Allen; Parson, Ted Blair

    2006-06-01

    Qualification of microsystems for weapon applications is critically dependent on our ability to build confidence in their performance, by predicting the evolution of their behavior over time in the stockpile. The objective of this work was to accelerate aging mechanisms operative in surface micromachined silicon microelectromechanical systems (MEMS) with contacting surfaces that are stored for many years prior to use, to determine the effects of aging on reliability, and relate those effects to changes in the behavior of interfaces. Hence the main focus was on 'dormant' storage effects on the reliability of devices having mechanical contacts, the first time they must move. A large number ({approx}1000) of modules containing prototype devices and diagnostic structures were packaged using the best available processes for simple electromechanical devices. The packaging processes evolved during the project to better protect surfaces from exposure to contaminants and water vapor. Packages were subjected to accelerated aging and stress tests to explore dormancy and operational environment effects on reliability and performance. Functional tests and quantitative measurements of adhesion and friction demonstrated that the main failure mechanism during dormant storage is change in adhesion and friction, precipitated by loss of the fluorinated monolayer applied after fabrication. The data indicate that damage to the monolayer can occur at water vapor concentrations as low as 500 ppm inside the package. The most common type of failure was attributed to surfaces that were in direct contact during aging. The application of quantitative methods for monolayer lubricant analysis showed that even though the coverage of vapor-deposited monolayers is generally very uniform, even on hidden surfaces, locations of intimate contact can be significantly depleted in initial concentration of lubricating molecules. These areas represent defects in the film prone to adsorption of

  7. Silicon integrated circuits part A : supplement 2

    CERN Document Server

    Kahng, Dawon

    1981-01-01

    Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters-physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This public

  8. Micro-machining.

    Science.gov (United States)

    Brinksmeier, Ekkard; Preuss, Werner

    2012-08-28

    Manipulating bulk material at the atomic level is considered to be the domain of physics, chemistry and nanotechnology. However, precision engineering, especially micro-machining, has become a powerful tool for controlling the surface properties and sub-surface integrity of the optical, electronic and mechanical functional parts in a regime where continuum mechanics is left behind and the quantum nature of matter comes into play. The surprising subtlety of micro-machining results from the extraordinary precision of tools, machines and controls expanding into the nanometre range-a hundred times more precise than the wavelength of light. In this paper, we will outline the development of precision engineering, highlight modern achievements of ultra-precision machining and discuss the necessity of a deeper physical understanding of micro-machining.

  9. Enhancing structural integrity of adhesive bonds through pulsed laser surface micro-machining

    KAUST Repository

    Diaz, Edwin Hernandez

    2015-06-01

    Enhancing the effective peel resistance of plastically deforming adhesive joints through laser-based surface micro-machining Edwin Hernandez Diaz Inspired by adhesion examples commonly found in nature, we reached out to examine the effect of different kinds of heterogeneous surface properties that may replicate this behavior and the mechanisms at work. In order to do this, we used pulsed laser ablation on copper substrates (CuZn40) aiming to increase adhesion for bonding. A Yb-fiber laser was used for surface preparation of the substrates, which were probed with a Scanning Electron Microscope (SEM) and X-ray Photoelectron Spectroscopy (XPS). Heterogeneous surface properties were devised through the use of simplified laser micromachined patterns which may induce sequential events of crack arrest propagation, thereby having a leveraging effect on dissipation. The me- chanical performance of copper/epoxy joints with homogeneous and heterogeneous laser micromachined interfaces was then analyzed using the T-peel test. Fractured surfaces were analyzed using SEM to resolve the mechanism of failure and adhesive penetration within induced surface asperities from the treatment. Results confirm positive modifications of the surface morphology and chemistry from laser ablation that enable mechanical interlocking and cohesive failure within the adhesive layer. Remarkable improvements of apparent peel energy, bond toughness, and effective peel force were appreciated with respect to sanded substrates as control samples.

  10. Porous silicon technology for integrated microsystems

    Science.gov (United States)

    Wallner, Jin Zheng

    With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

  11. High-performance micromachined vibratory rate- and rate-integrating gyroscopes

    Science.gov (United States)

    Cho, Jae Yoong

    The performance of vibratory micromachined gyroscopes has been continuously improving for the past two decades. However, to further improve performance of the MEMS gyroscope in harsh environment, it is necessary for gyros to reduce the sensitivity to environmental parameters, including vibration and temperature change. In addition, conventional rate-mode MEMS gyroscopes have limitation in performance due to tradeoff between resolution, bandwidth, and full-scale range. In this research, we aim to reduce vibration sensitivity by developing gyros that operate in the balanced mode. The balanced mode creates zero net momentum and reduces energy loss through an anchor. The gyro can differentially cancel measurement errors from external vibration along both sensor axes. The vibration sensitivity of the balanced-mode gyroscope including structural imbalance from microfabrication reduces as the absolute difference between in-phase parasitic mode and operating mode frequencies increases. The parasitic sensing mode frequency is designed larger than the operating mode frequency to achieve both improved vibration insensitivity and shock resistivity. A single anchor is used in order to minimize thermoresidual stress change. We developed two gyroscope based on these design principles. The Balanced Oscillating Gyro (BOG) is a quad-mass tuning-fork rate gyroscope. The relationship between gyro design and modal characteristics is studied extensively using finite element method (FEM). The gyro is fabricated using the planar Si-on-glass (SOG) process with a device thickness of 100microm. The BOG is evaluated using the first-generation analog interface circuitry. Under a frequency mismatch of 5Hz between driving and sense modes, the angle random walk (ARW) is measured to be 0.44°/sec/✓Hz. The performance is limited by quadrature error and low-frequency noise in the circuit. The Cylindrical Rate-Integrating Gyroscope (CING) operates in whole-angle mode. The gyro is completely

  12. Silicon Photonic Integrated Circuit Mode Multiplexer

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Xu, Jing

    2013-01-01

    We propose and demonstrate a novel silicon photonic integrated circuit enabling multiplexing of orthogonal modes in a few-mode fiber (FMF). By selectively launching light to four vertical grating couplers, all six orthogonal spatial and polarization modes supported by the FMF are successfully exc...

  13. The integration of surface micromachined devices with optoelectronics: Technology and applications

    Energy Technology Data Exchange (ETDEWEB)

    Warren, M.E.; Blum, O.; Sullivan, C.T.; Shul, R.J.; Rodgers, M.S.; Sniegowski, J.J.

    1998-04-01

    Sandia National Laboratories has a substantial effort in development of microelectromechanical system (MEMS) technologies. This miniaturization capability can lead to low-cost, small, high-performance systems-on-a-chip, and have many applications ranging from advanced military systems to large-volume commercial markets like automobiles, rf or land-based communications networks and equipment, or commercial electronics. One of the key challenges in realization of the microsystem is integration of several technologies including digital electronics; analog and rf electronics, optoelectronics, sensors and actuators, and advanced packaging technologies. In this work they describe efforts in integrating MEMS and optoelectronic or photonic functions and the fabrication constraints on both system components. the MEMS technology used in this work are silicon surface-machined systems fabricated using the SUMMiT (Sandia Ultraplanar Multilevel MEMS Technology) process developed at Sandia. This process includes chemical-mechanical polishing as an intermediate planarization step to allow the use of 4 or 5 levels of polysilicon.

  14. Materials issues in silicon integrated circuit processing

    International Nuclear Information System (INIS)

    Wittmer, M.; Stimmell, J.; Strathman, M.

    1986-01-01

    The symposium on ''Materials Issues in Integrated Circuit Processing'' sought to bring together all of the materials issued pertinent to modern integrated circuit processing. The inherent properties of the materials are becoming an important concern in integrated circuit manufacturing and accordingly research in materials science is vital for the successful implementation of modern integrated circuit technology. The session on Silicon Materials Science revealed the advanced stage of knowledge which topics such as point defects, intrinsic and extrinsic gettering and diffusion kinetics have achieved. Adaption of this knowledge to specific integrated circuit processing technologies is beginning to be addressed. The session on Epitaxy included invited papers on epitaxial insulators and IR detectors. Heteroepitaxy on silicon is receiving great attention and the results presented in this session suggest that 3-d integrated structures are an increasingly realistic possibility. Progress in low temperature silicon epitaxy and epitaxy of thin films with abrupt interfaces was also reported. Diffusion and Ion Implantation were well presented. Regrowth of implant-damaged layers and the nature of the defects which remain after regrowth were discussed in no less than seven papers. Substantial progress was also reported in the understanding of amorphising boron implants and the use of gallium implants for the formation of shallow p/sup +/ -layers

  15. Photonic integration and photonics-electronics convergence on silicon platform

    CERN Document Server

    Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

    2015-01-01

    Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

  16. Silicon-Based Light Sources for Silicon Integrated Circuits

    Directory of Open Access Journals (Sweden)

    L. Pavesi

    2008-01-01

    Full Text Available Silicon the material per excellence for electronics is not used for sourcing light due to the lack of efficient light emitters and lasers. In this review, after having introduced the basics on lasing, I will discuss the physical reasons why silicon is not a laser material and the approaches to make it lasing. I will start with bulk silicon, then I will discuss silicon nanocrystals and Er3+ coupled silicon nanocrystals where significant advances have been done in the past and can be expected in the near future. I will conclude with an optimistic note on silicon lasing.

  17. Integrating optical emitters into silicon photonic waveguides

    Science.gov (United States)

    Milgram, Joel

    This thesis reports work targeting the integration of Si light emitters with optical waveguides. Such integrated devices would find utility in a number of applications including telecommunications, optical interconnects, and biological and chemical sensors. Much research has been directed by others on how to improve the emission efficiency and achieve lasing in VLSI (very large scale integration) compatible sources. Here, the focus is on how such devices can be integrated with planar waveguides. Two enhancement techniques were selected for potential integration; defect engineering (DE), and Si nanocrystals (Si-nc) embedded in SOI2. Defect engineered light emitting diodes (LEDs) made on silicon-on-insulator (SOI) and emitting at 1.1 mum were successfully demonstrated. In addition, surface photoluminescence from SOI was analyzed to account for interference from the SOI cavity. However, it was determined that the emission efficiency of defect engineered LEDs studied during the course of this work is below that which was reported previously, and that the fabrication procedure thus suffers from irreproducibility. Barring an enormous advancement in the DE technique, it is concluded that the emission efficiency is too small to make use of its integration potential. A more successful approach was obtained from the Si-nc system fabricated using electron-cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD). Optically pumped edge emitting devices were designed, fabricated and characterized. The devices are comprised of Si-ncs emitting at 800 nm, integrated with slab silicon nitride waveguides. This work is the first report of edge emission from Si-ncs integrated with silicon nitride waveguides. Edge emission and waveguide properties were characterized in the ˜850 nm emission band of the Si-ncs, The edge emission was well described as a propagating mode, attenuated primarily by the Si-nc film. Propagation losses of a typical air/Si-nc/SiNx/SiO2 waveguide

  18. Laser Integration on Silicon Photonic Circuits Through Transfer Printing

    Science.gov (United States)

    2017-03-10

    silicon transfer printed single wavelength laser . Introduction Silicon has long offered promise as the ultimate platform for realizing compact photonic...the field has faced a big stumbling block: the lack of an integrated laser source. Thus far, silicon-photonics applications have had to rely on...AFRL-AFOSR-UK-TR-2017-0019 Laser integration on silicon photonic circuits through transfer printing Gunther Roelkens UNIVERSITEIT GENT VZW Final

  19. Micromachined Millimeter- and Submillimeter-Wave SIS Heterodyne Receivers for Remote Sensing

    Science.gov (United States)

    Hu, Qing

    1998-01-01

    A heterodyne mixer with a micromachined horn antenna and a superconductor -insulator-superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si3N4 dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30+/-3 K without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.

  20. A Low-noise Micromachined Millimeter-Wave Heterodyne Mixer using Nb Superconducting Tunnel Junctions

    Science.gov (United States)

    DeLange, Gert; Jacobson, Brian R.; Hu, Qing

    1996-01-01

    A heterodyne mixer with a micromachined horn antenna and a superconductor-insulator-superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si3N4 dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30 +/- 3 K (without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.

  1. Micromachined patch-clamp apparatus

    Science.gov (United States)

    Okandan, Murat

    2012-12-04

    A micromachined patch-clamp apparatus is disclosed for holding one or more cells and providing electrical, chemical, or mechanical stimulation to the cells during analysis with the patch-clamp technique for studying ion channels in cell membranes. The apparatus formed on a silicon substrate utilizes a lower chamber formed from silicon nitride using surface micromachining and an upper chamber formed from a molded polymer material. An opening in a common wall between the chambers is used to trap and hold a cell for analysis using the patch-clamp technique with sensing electrodes on each side of the cell. Some embodiments of the present invention utilize one or more electrostatic actuators formed on the substrate to provide mechanical stimulation to the cell being analyzed, or to provide information about mechanical movement of the cell in response to electrical or chemical stimulation.

  2. Silicon Oxynitride: A Versatile Material for Integrated Optics Applications

    NARCIS (Netherlands)

    Worhoff, Kerstin; Hilderink, L.T.H.; Driessen, A.; Lambeck, Paul

    Silicon oxynitride is a very attractive material for integrated optics application, because of its excellent optical properties (~e.g. optical loss below 0.2 dB/cm!, the large refractive index range ~between 1.45 for silicon oxide and 2.0 for silicon nitride), and last but not least, the

  3. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    -division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-oninsulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror......, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained...

  4. Environmental sensors based on micromachined cantilevers with integrated read-out

    DEFF Research Database (Denmark)

    Boisen, Anja; Thaysen, Jacob; Jensenius, Henriette

    2000-01-01

    An AFM probe with integrated piezoresistive read-out has been developed and applied as a cantilever-based environmental sensor. The probe has a built-in reference cantilever, which makes it possible to subtract background drift directly in the measurement. Moreover, the integrated read-out facili......An AFM probe with integrated piezoresistive read-out has been developed and applied as a cantilever-based environmental sensor. The probe has a built-in reference cantilever, which makes it possible to subtract background drift directly in the measurement. Moreover, the integrated read...

  5. Electrochemical detection of dopamine using arrays of liquid-liquid micro-interfaces created within micromachined silicon membranes

    International Nuclear Information System (INIS)

    Berduque, Alfonso; Zazpe, Raul; Arrigan, Damien W.M.

    2008-01-01

    The detection of protonated dopamine by differential pulse voltammetry (DPV) and square wave voltammetry (SWV) at arrays of micro-interfaces between two immiscible electrolyte solutions (μITIES) is presented. Microfabricated porous silicon membranes (consisting of eight pores, 26.6 μm in radius and 500 μm pore-pore separation, in a hexagonal layout) were prepared by photolithographic and etching procedures. The membrane pores were fabricated with hydrophobic internal walls so that the organic phase filled the pores and created the liquid interface at the aqueous side of the membrane. These were used for harnessing the benefits of three-dimensional diffusion to the interface and for interface stabilisation. The liquid-liquid interface provides a simple method to overcome the major problem in the voltammetric detection of dopamine at solid electrodes due to the co-existence of ascorbate at higher concentrations. Selectivity for dopamine over ascorbate was achieved by the use of dibenzo-18-crown-6 (DB18C6) for the facilitated ion transfer of dopamine across the μITIES array. Under these conditions, the presence of ascorbate in excess did not interfere in the detection of dopamine and the lowest concentration detectable was ca. 0.5 μM. In addition, the drawback of current signal saturation (non-linear increase of the peak current with the concentration of dopamine) observed at conventional (millimetre-sized) liquid-liquid interfaces was overcome using the microfabricated porous membranes

  6. Combination of a micro-lens multi-spot generator with a galvanometer scanner for flexible parallel micromachining of silicon

    Science.gov (United States)

    Zimmermann, Maik; Schmidt, Michael

    2011-10-01

    Multi focus optics are used for parallelizing production and for large-scale material processing. These elements split the beam into a periodic spot pattern with a defined grid and spot size. The challenge lies in the generation of a homogeneous envelope. Additionally the demand for flexible systems for an in-process changing of optical properties increases. Different components for multi spot generation like diffractive optical elements or micro lens arrays have been investigated. Diffractive optical elements offer large degree of freedom in the generation of arbitrary intensity distributions. In the paper we demonstrate the use of a diffractive element in combination with a multi spot generator. Within the paper we present the investigation of a micro lens array in a fly's eye condenser setup for the generation of homogeneous spot patterns. The multi spot generator is combined with a galvanometer scanner for forming an arbitrary shaped laser beam into a spot-, ring or arbitrary array pattern. We show the principal functionality of the multi-spot generator. Furthermore constrains of this setup are demonstrated. The multi spot scanner is used for micro structuring of silicon with a nanosecond diode pumped solid state laser. The ablation rate and structure quality are compared to single spot processing.

  7. VCSEL Scaling, Laser Integration on Silicon, and Bit Energy

    Science.gov (United States)

    2017-03-01

    Silicon Photonics: Figure 1 shows the electronic circuitry and comparison key to analyzing photonic bit energies for transceivers used in data centers...VCSEL Scaling, Laser Integration on Silicon , and Bit Energy D.G. Deppe,1,2 Ja. Leshin,1 and Je. Leshin1 1CREOL, College of Optics & Photonics...laser; (000.0000) General [For codes, see www.opticsinfobase.org/submit/ocis.] Keywords: VCSELs, Nanoscale lasers, optical interconnects, silicon

  8. Optical Trapping of Beads and Jurkat Cells Using Micromachined Fresnel Zone Plate Integrated with Microfluidic Chip

    Science.gov (United States)

    Kuo, Ju-Nan; Hu, Han-Zhong

    2011-10-01

    This paper presents a method for trapping beads and cells using a single-beam optical tweezer and a Fresnel zone plate integrated with a microfluidic chip. The experimental results show that a laser power of 2.4 mW is sufficient to trap 3-µm-diameter polystyrene beads, while a laser power of 1.5 mW is sufficient to trap individual Jurkat cells. The Fresnel zone plate developed in this study has many advantages, including a small size, a straightforward fabrication process, and a simple integration with microfluidic chips. Consequently, it provides an ideal solution for the trapping of a wide range of biological cells for analysis purposes.

  9. Mid-infrared integrated photonics on silicon: a perspective

    Science.gov (United States)

    Lin, Hongtao; Luo, Zhengqian; Gu, Tian; Kimerling, Lionel C.; Wada, Kazumi; Agarwal, Anu; Hu, Juejun

    2017-12-01

    The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

  10. Micromachined Thermal Flow Sensors—A Review

    Directory of Open Access Journals (Sweden)

    Jonathan T. W. Kuo

    2012-07-01

    Full Text Available Microfabrication has greatly matured and proliferated in use amongst many disciplines. There has been great interest in micromachined flow sensors due to the benefits of miniaturization: low cost, small device footprint, low power consumption, greater sensitivity, integration with on-chip circuitry, etc. This paper reviews the theory of thermal flow sensing and the different configurations and operation modes available. Material properties relevant to micromachined thermal flow sensing and selection criteria are also presented. Finally, recent applications of micromachined thermal flow sensors are presented. Detailed tables of the reviewed devices are included.

  11. A CMOS micromachined capacitive tactile sensor with integrated readout circuits and compensation of process variations.

    Science.gov (United States)

    Tsai, Tsung-Heng; Tsai, Hao-Cheng; Wu, Tien-Keng

    2014-10-01

    This paper presents a capacitive tactile sensor fabricated in a standard CMOS process. Both of the sensor and readout circuits are integrated on a single chip by a TSMC 0.35 μm CMOS MEMS technology. In order to improve the sensitivity, a T-shaped protrusion is proposed and implemented. This sensor comprises the metal layer and the dielectric layer without extra thin film deposition, and can be completed with few post-processing steps. By a nano-indenter, the measured spring constant of the T-shaped structure is 2.19 kNewton/m. Fully differential correlated double sampling capacitor-to-voltage converter (CDS-CVC) and reference capacitor correction are utilized to compensate process variations and improve the accuracy of the readout circuits. The measured displacement-to-voltage transductance is 7.15 mV/nm, and the sensitivity is 3.26 mV/μNewton. The overall power dissipation is 132.8 μW.

  12. Flexible integration of free-standing nanowires into silicon photonics.

    Science.gov (United States)

    Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

    2017-06-14

    Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

  13. III-V semiconductor devices integrated with silicon III-V semiconductor devices integrated with silicon

    Science.gov (United States)

    Hopkinson, Mark; Martin, Trevor; Smowton, Peter

    2013-09-01

    The integration of III-V semiconductor devices with silicon is one of the most topical challenges in current electronic materials research. The combination has the potential to exploit the unique optical and electronic functionality of III-V technology with the signal processing capabilities and advanced low-cost volume production techniques associated with silicon. Key industrial drivers include the use of high mobility III-V channel materials (InGaAs, InAs, InSb) to extend the performance of Si CMOS, the unification of electronics and photonics by combining photonic components (GaAs, InP) with a silicon platform for next-generation optical interconnects and the exploitation of large-area silicon substrates and high-volume Si processing capabilities to meet the challenges of low-cost production, a challenge which is particularly important for GaN-based devices in both power management and lighting applications. The diverse nature of the III-V and Si device approaches, materials technologies and the distinct differences between industrial Si and III-V processing have provided a major barrier to integration in the past. However, advances over the last decade in areas such as die transfer, wafer fusion and epitaxial growth have promoted widespread renewed interest. It is now timely to bring some of these topics together in a special issue covering a range of approaches and materials providing a snapshot of recent progress across the field. The issue opens a paper describing a strategy for the epitaxial integration of photonic devices where Kataria et al describe progress in the lateral overgrowth of InP/Si. As an alternative, Benjoucef and Reithmaier report on the potential of InAs quantum dots grown direct onto Si surfaces whilst Sandall et al describe the properties of similar InAs quantum dots as an optical modulator device. As an alternative to epitaxial integration approaches, Yokoyama et al describe a wafer bonding approach using a buried oxide concept, Corbett

  14. Biasing of Capacitive Micromachined Ultrasonic Transducers.

    Science.gov (United States)

    Caliano, Giosue; Matrone, Giulia; Savoia, Alessandro Stuart

    2017-02-01

    Capacitive micromachined ultrasonic transducers (CMUTs) represent an effective alternative to piezoelectric transducers for medical ultrasound imaging applications. They are microelectromechanical devices fabricated using silicon micromachining techniques, developed in the last two decades in many laboratories. The interest for this novel transducer technology relies on its full compatibility with standard integrated circuit technology that makes it possible to integrate on the same chip the transducers and the electronics, thus enabling the realization of extremely low-cost and high-performance devices, including both 1-D or 2-D arrays. Being capacitive transducers, CMUTs require a high bias voltage to be properly operated in pulse-echo imaging applications. The typical bias supply residual ripple of high-quality high-voltage (HV) generators is in the millivolt range, which is comparable with the amplitude of the received echo signals, and it is particularly difficult to minimize. The aim of this paper is to analyze the classical CMUT biasing circuits, highlighting the features of each one, and to propose two novel HV generator architectures optimized for CMUT biasing applications. The first circuit proposed is an ultralow-residual ripple (CMUT by charging a buffer capacitor synchronously with the pulsing sequence, thus reducing the impact of the switching noise on the received echo signals. The small area of the circuit (about 1.5 cm 2 ) makes it possible to generate the bias voltage inside the probe, very close to the CMUT, making the proposed solution attractive for portable applications. Measurements and experiments are shown to demonstrate the effectiveness of the new approaches presented.

  15. Micromachined Precision Inertial Instruments

    National Research Council Canada - National Science Library

    Najafi, Khalil

    2003-01-01

    This program focuses on developing inertial-grade micromachined accelerometers and gyroscopes and their associated electronics and packaging for use in a variety of military and commercial applications...

  16. Micromachined high-performance RF passives in CMOS substrate

    International Nuclear Information System (INIS)

    Li, Xinxin; Ni, Zao; Gu, Lei; Wu, Zhengzheng; Yang, Chen

    2016-01-01

    This review systematically addresses the micromachining technologies used for the fabrication of high-performance radio-frequency (RF) passives that can be integrated into low-cost complementary metal-oxide semiconductor (CMOS)-grade (i.e. low-resistivity) silicon wafers. With the development of various kinds of post-CMOS-compatible microelectromechanical systems (MEMS) processes, 3D structural inductors/transformers, variable capacitors, tunable resonators and band-pass/low-pass filters can be compatibly integrated into active integrated circuits to form monolithic RF system-on-chips. By using MEMS processes, including substrate modifying/suspending and LIGA-like metal electroplating, both the highly lossy substrate effect and the resistive loss can be largely eliminated and depressed, thereby meeting the high-performance requirements of telecommunication applications. (topical review)

  17. Towards Silicon-Based Longwave Integrated Optoelectronics (LIO)

    Science.gov (United States)

    2008-01-21

    complex longwave functions performed by the on-chip network, (6) adaptable sensing using intelligent electronics, (7) inexpensive Foundry integration...PD1 PD2 Tunable laser diode gas everywhere on serpent Silicon LIO chip Ge/Si ref rence waveguide (no slot) Slotted serpentine Ge/Si waveguide μB1...everywhere on serpent CMOS electronics Silicon LIO chip Ge/Si reference waveguide (no slot) Slotted Ge/Si waveguide

  18. Enhancing cavitation with micromachined surfaces

    Science.gov (United States)

    Fernandez Rivas, David; Stricker, Laura; Zijlstra, Aaldert G.; Gardeniers, Han; Lohse, Detlef; Prosperetti, Andrea; Mesoscale Chemical System Group Collaboration; Physics of Fluids Group Collaboration; Department of Mechanical Engineering Collaboration

    2012-11-01

    When a silicon surface with micromachined pits submerged in a liquid is exposed to continuous ultrasound at 200 kHz, bubbles are ejected from the air filled cavities. Depending on the pressure amplitude different scenarios are observed, as the bubbles ejected from the micropits interact in complex ways with each other, and with the silicon surface. We have determined the size distribution of bubbles ejected from one, two and three pits for three different electrical power settings, and correlated them with sonochemical OH* radical production. Numerical simulations of the sonochemical conversion reaction rates were obtained using the empirical bubble size distributions and are compared with experimental results. Experimental evidence of shock wave emission from the microbubble clusters, deformed microbubble shapes, jetting and surface erosion are also presented. Financially supported through the project 07391 of the Technology Foundation STW, The Netherlands.

  19. Integration of a silicon-based microprobe into a gear measuring instrument for accurate measurement of micro gears

    International Nuclear Information System (INIS)

    Ferreira, N; Krah, T; Jeong, D C; Kniel, K; Härtig, F; Metz, D; Dietzel, A; Büttgenbach, S

    2014-01-01

    The integration of silicon micro probing systems into conventional gear measuring instruments (GMIs) allows fully automated measurements of external involute micro spur gears of normal modules smaller than 1 mm. This system, based on a silicon microprobe, has been developed and manufactured at the Institute for Microtechnology of the Technische Universität Braunschweig. The microprobe consists of a silicon sensor element and a stylus which is oriented perpendicularly to the sensor. The sensor is fabricated by means of silicon bulk micromachining. Its small dimensions of 6.5 mm × 6.5 mm allow compact mounting in a cartridge to facilitate the integration into a GMI. In this way, tactile measurements of 3D microstructures can be realized. To enable three-dimensional measurements with marginal forces, four Wheatstone bridges are built with diffused piezoresistors on the membrane of the sensor. On the reverse of the membrane, the stylus is glued perpendicularly to the sensor on a boss to transmit the probing forces to the sensor element during measurements. Sphere diameters smaller than 300 µm and shaft lengths of 5 mm as well as measurement forces from 10 µN enable the measurements of 3D microstructures. Such micro probing systems can be integrated into universal coordinate measuring machines and also into GMIs to extend their field of application. Practical measurements were carried out at the Physikalisch-Technische Bundesanstalt by qualifying the microprobes on a calibrated reference sphere to determine their sensitivity and their physical dimensions in volume. Following that, profile and helix measurements were carried out on a gear measurement standard with a module of 1 mm. The comparison of the measurements shows good agreement between the measurement values and the calibrated values. This result is a promising basis for the realization of smaller probe diameters for the tactile measurement of micro gears with smaller modules. (paper)

  20. An integrated silicon double bridge anemometer

    NARCIS (Netherlands)

    van Putten, A.F.P.

    1983-01-01

    Since 1974, silicon has been used for making flow sensors, though a lot of problems with respect to drift in time and temperature behaviour had to be solved. This is especially the case when the chip is operating at elevated temperatures. Heat conduction plays a vital role in the general heat

  1. Laser Micromachining and Information Discovery Using a Dual Beam Interferometry

    Energy Technology Data Exchange (ETDEWEB)

    Theppakuttaikomaraswamy, Senthil P. [Iowa State Univ., Ames, IA (United States)

    2001-01-01

    Lasers have proven to be among the most promising tools for micromachining because they can process features down to the size of the laser wavelength (smaller than 1 micrometer) and they provide a non-contact technology for machining. The demand for incorporating in-situ diagnostics technology into the micromachining environment is driven by the increasing need for producing micro-parts of high quality and accuracy. Laser interferometry can be used as an on-line monitoring tool and it is the aim of this work to enhance the understanding and application of Michelson interferometry principle for the in-situ diagnostics of the machining depth on the sub-micron and micron scales. micromachining is done on two different materials and a comprehensive investigation is done to control the width and depth of the machined feature. To control the width of the feature, laser micromachining is done on copper and a detailed analysis is performed. The objective of this experiment is to make a precision mask for sputtering with an array of holes on it using an Nd:YAG laser of 532 nm wavelength. The diameter of the hole is 50 μm and the spacing between holes (the distance between the centers) is 100 μm. Michelson interferometer is integrated with a laser machining system to control the depth of machining. An excimer laser of 308 nm wavelength is used for micromachining. A He-Ne laser of 632.8 nm wavelength is used as the light source for the interferometer. Interference patterns are created due to the change in the path length between the two interferometer arms. The machined depth information is obtained from the interference patterns on an oscilloscope detected by a photodiode. To compare the predicted depth by the interferometer with the true machining depth, a surface profilometer is used to measure the actual machining depth on the silicon. It is observed that the depths of machining obtained by the surface profile measurement are in accordance with the interferometer

  2. Micromachined Systems-on-a-Chip: Infrastructure, Technology and Applications

    Energy Technology Data Exchange (ETDEWEB)

    Allen, J. J.; Krygowski, T. W.; Miller, S. L.; Montague, S.; Rodgers, M. S.; Schriner, H.; Smith, J. H.; Sniegowski, J. J.

    1998-10-09

    A review is made of the infrastructure, technology and capabilities of Sandia National Laboratories for the development of micromechanical systems that have potential space applications. By incorporating advanced fabrication processes, such as chemical mechanical polishing, and several mechanical polysilicon levels, the range' of rrticromechanical systems that can be fabricated in these technologies is virtually limitless. Representative applications include a micro- engine driven mirror, and a micromachined lock. Using a novel integrated MEM!YCMOS technology, a six degree-of-freedom accelerometer/gyroscope system has been designed by researchers at U.C. Berkeley and fabricated on the same silicon chip as the CMOS control circuits to produce an integrated micro-navigational unit.

  3. Silicon integrated circuits advances in materials and device research

    CERN Document Server

    Kahng, Dawon

    1981-01-01

    Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, an

  4. Technology trends in high temperature pressure transducers: The impact of micromachining

    Science.gov (United States)

    Mallon, Joseph R., Jr.

    1992-01-01

    This paper discusses the implications of micromachining technology on the development of high temperature pressure transducers. The introduction puts forth the thesis that micromachining will be the technology of choice for the next generation of extended temperature range pressure transducers. The term micromachining is defined, the technology is discussed and examples are presented. Several technologies for high temperature pressure transducers are discussed, including silicon on insulator, capacitive, optical, and vibrating element. Specific conclusions are presented along with recommendations for development of the technology.

  5. Monolithically Integrated High-β Nanowire Lasers on Silicon.

    Science.gov (United States)

    Mayer, B; Janker, L; Loitsch, B; Treu, J; Kostenbader, T; Lichtmannecker, S; Reichert, T; Morkötter, S; Kaniber, M; Abstreiter, G; Gies, C; Koblmüller, G; Finley, J J

    2016-01-13

    Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.

  6. Novel technique for reliability testing of silicon integrated circuits

    NARCIS (Netherlands)

    Le Minh, P.; Wallinga, Hans; Woerlee, P.H.; van den Berg, Albert; Holleman, J.

    2001-01-01

    We propose a simple, inexpensive technique with high resolution to identify the weak spots in integrated circuits by means of a non-destructive photochemical process in which photoresist is used as the photon detection tool. The experiment was done to localize the breakdown link of thin silicon

  7. Integration of mask and silicon metrology in DFM

    Science.gov (United States)

    Matsuoka, Ryoichi; Mito, Hiroaki; Sugiyama, Akiyuki; Toyoda, Yasutaka

    2009-03-01

    We have developed a highly integrated method of mask and silicon metrology. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. We have inspected the high accuracy, stability and reproducibility in the experiments of integration. The accuracy is comparable with that of the mask and silicon CD-SEM metrology. In this report, we introduce the experimental results and the application. As shrinkage of design rule for semiconductor device advances, OPC (Optical Proximity Correction) goes aggressively dense in RET (Resolution Enhancement Technology). However, from the view point of DFM (Design for Manufacturability), the cost of data process for advanced MDP (Mask Data Preparation) and mask producing is a problem. Such trade-off between RET and mask producing is a big issue in semiconductor market especially in mask business. Seeing silicon device production process, information sharing is not completely organized between design section and production section. Design data created with OPC and MDP should be linked to process control on production. But design data and process control data are optimized independently. Thus, we provided a solution of DFM: advanced integration of mask metrology and silicon metrology. The system we propose here is composed of followings. 1) Design based recipe creation: Specify patterns on the design data for metrology. This step is fully automated since they are interfaced with hot spot coordinate information detected by various verification methods. 2) Design based image acquisition: Acquire the images of mask and silicon automatically by a recipe based on the pattern design of CD-SEM.It is a robust automated step because a wide range of design data is used for the image acquisition. 3) Contour profiling and GDS data generation: An image profiling process is applied to the acquired image based

  8. Compact Micromachined Bandpass Filters for Infrared Planetary Spectroscopy

    Science.gov (United States)

    Brown, Ari D.; Aslam, Shahid; Chervenak, James A.; Huang, Wei-Chung; Merrell, Willie; Quijada, Manuel

    2011-01-01

    The thermal instrument strawman payload of the Jupiter Europa Orbiter on the Europa Jupiter Science Mission will map out thermal anomalies, the structure, and atmospheric conditions of Europa and Jupiter within the 7-100 micron spectral range. One key requirement for the payload is that the mass cannot exceed 3.7 kg. Consequently, a new generation of light-weight miniaturized spectrometers needs to be developed. On the path toward developing these spectrometers is development of ancillary miniaturized spectroscopic components. In this paper, we present a strategy for making radiation hard and low mass FIR band pass metal mesh filters. Our strategy involves using MEMS-based fabrication techniques, which will permit the quasi-optical filter structures to be made with micron-scale precision. This will enable us to achieve tight control over both the pass band of the filter and the micromachined silicon support structure architecture, which will facilitate integration of the filters for a variety of applications.

  9. Surface-Micromachined Neural Sensors with Integrated Double Side Recordings on Dry-Etch Benzocyclobutene(BCB) Substrate.

    Science.gov (United States)

    Zhu, Haixin; He, Jiping; Kim, Bruce

    2005-01-01

    a neural sensor with novel structure and capable of double side recordings has been designed and fabricated using surface micromachining technique. Dry-etch Benzocyclobutene (BCB) was selected as the substrate and packaging material for its excellent electrical, mechanical and thermal properties. Positive photoresist (AZ4620) was used as the sacrificial layer during the formation of backside recording sites, and the lift-off process combined with BCB dry etch technique was developed to open the recording sites on the backside. The finished device has intracortical recording sites on both sides, and also epidural recording sites on the front side. The total channel number doubled compared to that of single side electrode structure. Three dry-etch BCB layers were applied to insulate the front side conduction traces from the backside trace layer, and package the entire devices. The developed process shows reliable and high fabrication yield, and results suggest that this newly developed neural sensor could improve the performance and efficiency of neural recording.

  10. Integrated silicon grid ion extraction system for O sub 2 processes

    Energy Technology Data Exchange (ETDEWEB)

    Korzec, D.; Engemann, J.; Bansky, J.; Keller, H.M. (University of Wuppertal, Department of Electrical Engineering, 5600 Wuppertal 1, West Germany (DE))

    1990-11-01

    A novel multibeamlet very low energy ion extraction optic technology avoiding cumbersome grid readjustment and thermal degradation of beam properties during a reactive process has been developed. In this approach anisotropically etched silicon grids ((100)-oriented Si wafers) are permanently integrated into a holder made of layered ceramics or micromachined AlN. The performance of such extraction systems having 300, 600, and 900 {mu}m grid separation was tested in a 3 cm capacitively coupled rf-ion source. Stable system operation with use of oxygen has been achieved for an extended period of time ({gt}100 h) for a total extraction voltage of 140 V which represents the maximum voltage to be applied for a grid separation of 0.3 mm. Additionally detailed Faraday-cup measurements of the extracted ion beam have been carried out for a total voltage range of 0--600 V, a vacuum chamber pressure of 1{times}10{sup {minus}4}--1{times}10{sup {minus}3} mbar, rf-power levels of 10--170 W, a net-to-total voltage ratio of 0.5--1.0 and an axial magnetic field of up to 22 mT. For O{sub 2} an ion current density of 1.3 mA/cm{sup 2} could be extracted with ions having a mean energy of 60 eV. Even for energies as low as 50-eV current densities of 0.8 mA/cm{sup 2} could be achieved. In combination with the filamentless capacitively coupled rf source used, this approach has promise in various fields of materials research and processing such as ion beam assisted deposition of high-{ital T}{sub {ital c}} YBaCuO layers and etching/modification of diamondlike, diamond and polymer thin films.

  11. Micromachined glass chips for ion analysis

    NARCIS (Netherlands)

    Gardeniers, Johannes G.E.; Mulder, Micha; Lüttge, Regina; van den Berg, Albert

    2002-01-01

    This article describes recent developments at Micronit Microfluidics B.V. and MESA+ in the field of "Lab-on-a-chip" systems for ion analysis. Glass chips with typical micromachined channel geometries for capillary electrophoresis and integrated conductivity detection were developed, with which

  12. Integrated nanoscale silicon sensors using top-down fabrication

    Science.gov (United States)

    Elibol, O. H.; Morisette, D.; Akin, D.; Denton, J. P.; Bashir, R.

    2003-12-01

    Semiconductor device-based sensing of chemical and biological entities has been demonstrated through the use of micro- and nanoscale field-effect devices and close variants. Although carbon nanotubes and silicon nanowires have been demonstrated as single molecule biosensors, the fabrication methods that have been used for creating these devices are typically not compatible with modern semiconductor manufacturing techniques and their large scale integration is problematic. These shortcomings are addressed by recent advancements in microelectronic fabrication techniques which resulted in the realization of nanowire-like structures. Here we report a method to fabricate silicon nanowires at precise locations using such techniques. Our method allows for the realization of truly integrated sensors capable of production of dense arrays. Sensitivity of these devices to changes in the ambient gas composition is also shown.

  13. Integration of functional complex oxide nanomaterials on silicon

    Directory of Open Access Journals (Sweden)

    Jose Manuel eVila-Fungueiriño

    2015-06-01

    Full Text Available The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications that can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE. Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be exposed, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.

  14. Integrated Silicon Carbide Power Electronic Block

    Energy Technology Data Exchange (ETDEWEB)

    Radhakrishnan, Rahul [Global Power Technologies Group, Inc., Lake Forest, CA (United States)

    2017-11-07

    Research involved in this project is aimed at monolithically integrating an anti-parallel diode to the SiC MOSFET switch, so as to avoid having to use an external anti-parallel diode in power circuit applications. SiC MOSFETs are replacing Si MOSFETs and IGBTs in many applications, yet the high bandgap of the body diode in SiC MOSFET and consequent need for an external anti-parallel diode increases costs and discourages circuit designers from adopting this technology. Successful demonstration and subsequent commercialization of this technology would reduce SiC MOSFET cost and additionally reduce component count as well as other costs at the power circuit level. In this Phase I project, we have created multiple device designs, set up a process for device fabrication at the 150mm SiC foundry XFAB Texas, demonstrated unit-processes for device fabrication in short loops and started full flow device fabrication. Key findings of the development activity were: The limits of coverage of photoresist over the topology of thick polysilicon structures covered with oxide, which required larger feature dimensions to overcome; and The insufficient process margin for removing oxide spacers from polysilicon field ring features which could result in loss of some features without further process development No fundamental obstacles were uncovered during the process development. Given sufficient time for additional development it is likely that processes could be tuned to realize the monolithically integrated SiC JBS diode and MOSFET. Sufficient funds were not available in this program to resolve processing difficulties and fabricate the devices.

  15. Feasibility studies of microelectrode silicon detectors with integrated electronics

    International Nuclear Information System (INIS)

    Dalla Betta, G.-F.; Batignani, G.; Bettarini, S.; Boscardin, M.; Bosisio, L.; Carpinelli, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Lusiani, A.; Manghisoni, M.; Pignatel, G.U.; Rama, M.; Ratti, L.; Re, V.; Sandrelli, F.; Speziali, V.; Svelto, F.; Zorzi, N.

    2002-01-01

    We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source-follower configuration is introduced

  16. Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers

    Science.gov (United States)

    Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

    2015-12-01

    Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.

  17. Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers.

    Science.gov (United States)

    Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

    2015-12-04

    Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.

  18. Micromachined chemical jet dispenser

    Science.gov (United States)

    Swierkowski, S.P.

    1999-03-02

    A dispenser is disclosed for chemical fluid samples that need to be precisely ejected in size, location, and time. The dispenser is a micro-electro-mechanical systems (MEMS) device fabricated in a bonded silicon wafer and a substrate, such as glass or silicon, using integrated circuit-like fabrication technology which is amenable to mass production. The dispensing is actuated by ultrasonic transducers that efficiently produce a pressure wave in capillaries that contain the chemicals. The 10-200 {micro}m diameter capillaries can be arranged to focus in one spot or may be arranged in a larger dense linear array (ca. 200 capillaries). The dispenser is analogous to some ink jet print heads for computer printers but the fluid is not heated, thus not damaging certain samples. Major applications are in biological sample handling and in analytical chemical procedures such as environmental sample analysis, medical lab analysis, or molecular biology chemistry experiments. 4 figs.

  19. Environmental life cycle assessment of roof-integrated flexible amorphous silicon/nanocrystalline silicon solar cell laminate

    NARCIS (Netherlands)

    Mohr, N.J.; Meijer, A.; Huijbregts, M.A.J.; Reijnders, L.

    2013-01-01

    This paper presents an environmental life cycle assessment of a roof-integrated flexible solar cell laminate with tandem solar cells composed of amorphous silicon/nanocrystalline silicon (a-Si/nc-Si). The a-Si/nc-Si cells are considered to have 10% conversion efficiency. Their expected service life

  20. Micromachined palladium silver alloy membranes for hydrogen separation

    NARCIS (Netherlands)

    Tong, D.H.; Gielens, F.C.; Berenschot, Johan W.; de Boer, Meint J.; Gardeniers, Johannes G.E.; Jansen, Henricus V.; Nijdam, W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2002-01-01

    This paper presents wafer-scale palladium - silver alloy membranes, fabricated with a sequence of wellknown thin film and silicon micromachining techniques. The membranes have been tested in a gas permeation system to determine the hydrogen permeability and hydrogen selectivity. Typical flow rates

  1. The micromachined logo of Atomki

    International Nuclear Information System (INIS)

    Rajta, I.; Szilasi, S.Z.

    2006-01-01

    Complete text of publication follows. Proton Beam Micromachining, also known as P-beam Writing, is a direct write 3- dimensional lithographic technique. Conventional resist types are PMMA (polymethylmethacrylate), and SU-8 (of MicroChem Corp.); they are positive and negative resists, respectively. In this work we used SU-8, the most common negative resist material. SU-8 was spun on a flat surface, typically Silicon or glass. A direct write proton beam was scanned over an arbitary structure (the Atomki logo can be replaced by any other structure), which produces chain scissioning in the polymer. Post exposure bake (PEB) is usually needed in case of conventional optical lithography, but using protons this bake is done in situ as the ions heat up the sample in vacuum. Subsequently chemical etching takes place, the solvent is available at MicroChem Corp. The schematic diagram of the above described micromachining process is shown on Fig. 1. The irradiation requires a scanning proton microbeam system equipped with suitable beam scanning and blanking facilities. This is available in the Institute, our setup has been upgraded from doublet to triplet focusing system (Oxford Microbeams Ltd.). For scanning we use a DIO card (PCI-6731 of National Instruments), and the IonScan software [1]. Sample preparation was carried out at our 'semi clean' room. This is also where chemical development of the samples and the optical microscopy have been done too. A Zeiss Axio Imager microscope is available (equipped with 5 objective lenses, 4 different contrast methods, transmitted or reflected light illumination). Fig. 2. shows a typical example of the Atomki logo. This is a bright field image, a number of different nice and colourful images can be produced with the other contrast techniques (for more images see the Institute website: http://www.atomki.hu/ ). (author)

  2. Stiction in surface micromachining

    NARCIS (Netherlands)

    Tas, Niels Roelof; Sonnenberg, A.H.; Jansen, Henricus V.; Legtenberg, R.; Legtenberg, Rob; Elwenspoek, Michael Curt

    1996-01-01

    Due to the smoothness of the surfaces in surface micromachining, large adhesion forces between fabricated structures and the substrate are encountered. Four major adhesion mechanisms have been analysed: capillary forces, hydrogen bridging, electrostatic forces and van der Waals forces. Once contact

  3. Cobalt micro-magnet integration on silicon MOS quantum dots

    Science.gov (United States)

    Camirand Lemyre, Julien; Rochette, Sophie; Anderson, John; Manginell, Ronald P.; Pluym, Tammy; Ward, Dan; Carroll, Malcom S.; Pioro-Ladrière, Michel

    Integration of cobalt micro-magnets on silicon metal-oxide-semiconductor (MOS) quantum dot devices has been investigated. The micro-magnets are fabricated in a lift-off process with e-beam lithography and deposited directly on top of an etched poly-silicon gate stack. Among the five resist stacks tested, one is found to be compatible with our MOS specific materials (Si and SiO2) . Moreover, devices with and without additional Al2O3 insulating layer show no additional gate leakage after processing. Preliminary transport data indicates electrostatic stability of our devices with integrated magnets. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  4. Efficient colored silicon solar modules using integrated resonant dielectric nanoscatterers

    Science.gov (United States)

    Neder, Verena; Luxembourg, Stefan L.; Polman, Albert

    2017-08-01

    We demonstrate photovoltaic modules with a bright green color based on silicon heterojunction solar cells integrated with arrays of light scattering dielectric nanoscatterers. Dense arrays of crystalline silicon nanocylinders, 100-120 nm wide, 240 nm tall, and 325 nm pitch, are made onto module cover slides using substrate-conformal soft-imprint lithography. Strong electric and magnetic dipolar Mie resonances with a narrow linewidth (Q ˜ 30) cause strong (35%-40%) specular light scattering on resonance (˜540 nm). The green color is observed over a wide range of angles (8°-75°). As the resonant nanoscatterers are transparent for the major fraction of the incident solar spectrum, the relative loss in short-circuit current is only 10%-11%. The soft-imprinted nanopatterns can be applied on full-size solar modules and integrated with conventional module encapsulation. The dielectric Mie resonances can be controlled by geometry, opening up a road for designing efficient colorful or white building-integrated photovoltaics.

  5. Silicon compiler design of combinational and pipeline adder integrated circuits

    Science.gov (United States)

    Froede, A. O., III

    1985-06-01

    The architecture and structures used by the MacPitts silicon compiler to design integrated circuits are described, and the capabilities and limitations of the compiler are discussed. The performance of several combinational and pipeline adders designed by MacPitts and a hand-crafted pipeline adder are compared. Several different MacPitts design errors are documented. Tutorial material is presented to aid in using the MacPitts interpreter and to illustrate timing analysis of MacPitts-designed circuits using the program Crystal.

  6. Silicon-based photonic integrated circuit for label-free biosensing

    OpenAIRE

    Samusenko, Alina

    2016-01-01

    Silicon-based Photonic Integrated Circuit (PIC) is a device that integrates several optical components using the mature semiconductor technology platform, developed through years for the needs of electronic integrated circuits. In recent years, silicon PICs have been demonstrated as a powerful platform for biosensing systems - devices which play an omnipresent role in such essential life aspects as health care, environmental monitoring, food safety, etc. The growing importance of silicon phot...

  7. Multi-Level Micromachined Systems-on-a-Chip: Technology and Applications

    Energy Technology Data Exchange (ETDEWEB)

    Allen, J.J.; Krygowski, T.W.; Miller, S.L.; Montague, S.; Rodgers, M.S.; Smith, J.H.; Sniegowski, J.J.

    1998-10-27

    Researchers at Sandia have recently designed and built several research prototypes, which demonstrate that truly complex mechanical systems can now be realized in a surface micromachined technology. These MicroElectro- Mechanical Systems (MEMS) include advanced actuators, torque multiplying gear tmins, rack and pinion assemblies, positionable mirrors, and mechanical discriminators. All of tile mechanical components are batch fabricated on a single chip of silicon using the infrastructure origimdly developed to support today's highly reliabk; and robust microelectronics industry. Sand ia is also developing the technology 10 integrate microelectronic circuits onto the s,ime piece of silicon that is used to fabricate the MEMS devices. This significantly increases sensitivity and reliability, while fhrther reducing package size and fabrication costs. A review of the MEMS technology and capabilities available at Sandia National Laboratories is presented.

  8. Black silicon-based infrared radiation source

    Science.gov (United States)

    Anwar, Momen; Sabry, Yasser; Basset, Philippe; Marty, Frédéric; Bourouina, Tarik; Khalil, Diaa

    2016-03-01

    Micromachined infrared sources are enabling component for interferometric and spectroscopic sensors. Their compact size and low cost transform bulky instruments to the sensor scale, which is needed for a wide range of applications in the conventional and unconventional environments. The silicon micromachined sources should be engineered to have good emissivity across a large wavelength range because the intrinsic emissivity of silicon is low. This optimization was reported in literature by either the deposition of black metal at the surface of an emitter or the use of deep phonic crystal cavities, which complicates the fabrication technology and results in sharp dip lines in the spectral emissivity, respectively. In this work we report a micromachined infrared radiation source based on a heater on the top of black silicon structure for the first time in the literature, up to the authors' knowledge. The temperature of the device is characterized versus the applied voltage and the radiated spectrum is captured in the 1300 nm to 2500 nm spectral range; limited by the spectrum analysis instrument. The reported source opens the doors for completely integrated MEMS spectral sensors onchip.

  9. Single crystal ternary oxide ferroelectric integration with Silicon

    Science.gov (United States)

    Bakaul, Saidur; Serrao, Claudy; Youun, Long; Khan, Asif; Salahuddin, Sayeef

    2015-03-01

    Integrating single crystal, ternary oxide ferroelectric thin film with Silicon or other arbitrary substrates has been a holy grail for the researchers since the inception of microelectronics industry. The key motivation is that adding ferroelectric materials to existing electronic devices could bring into new functionality, physics and performance improvement such as non-volatility of information, negative capacitance effect and lowering sub-threshold swing of field effect transistor (FET) below 60 mV/decade in FET [Salahuddin, S, Datta, S. Nano Lett. 8, 405(2008)]. However, fabrication of single crystal ferroelectric thin film demands stringent conditions such as lattice matched single crystal substrate and high processing temperature which are incompatible with Silicon. Here we report on successful integration of PbZr0.2Ti0.8O3 in single crystal form with by using a layer transfer method. The lattice structure, surface morphology, piezoelectric coefficient d33, dielectric constant, ferroelectric domain switching and spontaneous and remnant polarization of the transferred PZT are as good as these characteristics of the best PZT films grown by pulsed laser deposition on lattice matched oxide substrates. We also demonstrate Si based, FE gate controlled FET devices.

  10. Hybrid Integrated Silicon Microfluidic Platform for Fluorescence Based Biodetection

    Directory of Open Access Journals (Sweden)

    André Darveau

    2007-09-01

    Full Text Available The desideratum to develop a fully integrated Lab-on-a-chip device capable ofrapid specimen detection for high throughput in-situ biomedical diagnoses and Point-of-Care testing applications has called for the integration of some of the novel technologiessuch as the microfluidics, microphotonics, immunoproteomics and Micro ElectroMechanical Systems (MEMS. In the present work, a silicon based microfluidic device hasbeen developed for carrying out fluorescence based immunoassay. By hybrid attachment ofthe microfluidic device with a Spectrometer-on-chip, the feasibility of synthesizing anintegrated Lab-on-a-chip type device for fluorescence based biosensing has beendemonstrated. Biodetection using the microfluidic device has been carried out usingantigen sheep IgG and Alexafluor-647 tagged antibody particles and the experimentalresults prove that silicon is a compatible material for the present application given thevarious advantages it offers such as cost-effectiveness, ease of bulk microfabrication,superior surface affinity to biomolecules, ease of disposability of the device etc., and is thussuitable for fabricating Lab-on-a-chip type devices.

  11. Micromachining with copper lasers

    Science.gov (United States)

    Knowles, Martyn R. H.; Bell, Andy; Foster-Turner, Gideon; Rutterford, Graham; Chudzicki, J.; Kearsley, Andrew J.

    1997-04-01

    In recent years the copper laser has undergone extensive development and has emerged as a leading and unique laser for micromachining. The copper laser is a high average power (10 - 250 W), high pulse repetition rate (2 - 32 kHz), visible laser (511 nm and 578 nm) that produces high peak power (typically 200 kW), short pulses (30 ns) and very good beam quality (diffraction limited). This unique set of laser parameters results in exceptional micro-machining in a wide variety of materials. Typical examples of the capabilities of the copper laser include the drilling of small holes (10 - 200 micrometer diameter) in materials as diverse as steel, ceramic, diamond and polyimide with micron precision and low taper (less than 1 degree) cutting and profiling of diamond. Application of the copper laser covers the electronic, aerospace, automotive, nuclear, medical and precision engineering industries.

  12. Micromachined sensor and actuator research at Sandia`s Microelectronics Development Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Smith, J.H.

    1996-11-01

    An overview of the surface micromachining program at the Microelectronics Development Laboratory of Sandia National Laboratories is presented. Development efforts are underway for a variety of surface micromachined sensors and actuators for both defense and commercial applications. A technology that embeds micromechanical devices below the surface of the wafer prior to microelectronics fabrication has been developed for integrating microelectronics with surface-micromachined micromechanical devices. The application of chemical-mechanical polishing to increase the manufacturability of micromechanical devices is also presented.

  13. Nonlinear Silicon Waveguides for Integrated Fiber Laser Systems

    Science.gov (United States)

    Wong, Chi Yan

    Silicon-on-insulator (SOI) based photonic devices have attracted great interest from photonics community because of its compatibility with state-of-the-art CMOS fabrication processes and its potential of making energy efficient and low cost photonic integrated circuits (PICs) for high bandwidth optical interconnects and integrated optical sensors. Wavelength division multiplexing (WDM) is already widely used in optical communications and is also of interest for optical sensors, providing advantages of low cost, and high speed compared with single wavelength approach. However, the cost and the bulkiness of WDM systems increase proportionally with the number of wavelengths if conventional external laser source is used. Therefore, low cost and compact laser source with stable and high line quality is of great interest for integrated sensors. In this thesis, we investigate the incorporation of silicon photonic devices as intracavity elements in fiber lasers for various applications. Therefore, the high flexibly and rich functionalities of fiber lasers can be directly used in the PIC. Also, high-speed feedback control of the cavity becomes possible. The possibility of applying nonlinear SOI waveguides to fiber lasers is investigated. We propose and demonstrate a multiwavelength erbium-doped fiber laser stabilized by four-wave mixing (FWM) in a nonlinear SOI waveguide. Such multiwavelength lasers are potentially suitable for WDM sensing. The wavelength selectivity was achieved by an intracavity Fabry-Perot comb filter. Making use of the nonlinearity of the SOI waveguide, a multiwavelength laser with six output wavelengths at 0.8 nm spacing was achieved. We study a passive mode-locked erbium-doped fiber ring laser based on a nonlinear SOI microring resonator (MRR). By using the MRR as the comb filter and the nonlinear medium, a stable mode-locked pulse train at 100 GHz was produced by filter-driven four-wave mixing. Such lasers can act as high repetition rate optical

  14. Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

    OpenAIRE

    Liao, M.; Chen, S.; Huo, S.; Chen, S.; Wu, J.; Tang, M.; Kennedy, K.; Li, W.; Kumar, S.; Martin, M.; Baron, T.; Jin, C.; Ross, I.; Seeds, A.; Liu, H.

    2017-01-01

    In this paper, we report monolithically integrated IIIV\\ud quantum dot (QD) light-emitting sources on silicon substrates\\ud for silicon photonics. We describe the first practical InAs/GaAs\\ud QD lasers monolithically grown on an offcut silicon (001) substrate\\ud due to the realization of high quality III-V epilayers on silicon with\\ud low defect density, indicating that the large material dissimilarity\\ud between III-Vs and silicon is no longer a fundamental barrier\\ud limiting monolithic gro...

  15. Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

    2016-01-01

    Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

  16. Effect of fluorocarbon self-assembled monolayer films on sidewall adhesion and friction of surface micromachines with impacting and sliding contact interfaces

    International Nuclear Information System (INIS)

    Xiang, H.; Komvopoulos, K.

    2013-01-01

    A self-assembled monolayer film consisting of fluoro-octyltrichlorosilane (FOTS) was vapor-phase deposited on Si(100) substrates and polycrystalline silicon (polysilicon) surface micromachines. The hydrophobic behavior and structural composition of the FOTS film deposited on Si(100) were investigated by goniometry and X-ray photoelectron spectroscopy, respectively. The effects of contact pressure, relative humidity, temperature, and impact/sliding cycles on the adhesive and friction behavior of uncoated and FOTS-coated polysilicon micromachines (referred to as the Si and FOTS/Si micromachines, respectively) were investigated under controlled loading and environmental conditions. FOTS/Si micromachines demonstrated much lower and stable adhesion than Si micromachines due to the highly hydrophobic and conformal FOTS film. Contrary to Si micromachines, sidewall adhesion of FOTS/Si micromachines demonstrated a weak dependence on relative humidity, temperature, and impact cycles. In addition, FOTS/Si micromachines showed low and stable adhesion and low static friction for significantly more sliding cycles than Si micromachines. The adhesive and static friction characteristics of Si and FOTS/Si micromachines are interpreted in the context of physicochemical surface changes, resulting in the increase of the real area of contact and a hydrophobic-to-hydrophilic transition of the surface chemical characteristics caused by nanoscale surface smoothening and the removal of the organic residue (Si micromachines) or the FOTS film (FOTS/Si micromachines) during repetitive impact and oscillatory sliding of the sidewall surfaces.

  17. New technique for fabrication of high frequency piezoelectric Micromachined Ultrasound Transducers

    DEFF Research Database (Denmark)

    Pedersen, T; Thomsen, Erik Vilain; Zawada, T

    2008-01-01

    A novel technique for fabrication of linear arrays of high frequency piezoelectric Micromachined Ultrasound Transducers (pMUT) on silicon substrates is presented. Piezoelectric elements are formed by deposition of PZT ((PbZrxTi1-x)O3) into etched features of the silicon substrate...

  18. Trends in laser micromachining

    Science.gov (United States)

    Gaebler, Frank; van Nunen, Joris; Held, Andrew

    2016-03-01

    Laser Micromachining is well established in industry. Depending on the application lasers with pulse length from μseconds to femtoseconds and wavelengths from 1064nm and its harmonics up to 5μm or 10.6μm are used. Ultrafast laser machining using pulses with pico or femtosecond duration pulses is gaining traction, as it offers very precise processing of materials with low thermal impact. Large-scale industrial ultrafast laser applications show that the market can be divided into various sub segments. One set of applications demand low power around 10W, compact footprint and are extremely sensitive to the laser price whilst still demanding 10ps or shorter laser pulses. A second set of applications are very power hungry and only become economically feasible for large scale deployments at power levels in the 100+W class. There is also a growing demand for applications requiring fs-laser pulses. In our presentation we would like to describe these sub segments by using selected applications from the automotive and electronics industry e.g. drilling of gas/diesel injection nozzles, dicing of LED substrates. We close the presentation with an outlook to micromachining applications e.g. glass cutting and foil processing with unique new CO lasers emitting 5μm laser wavelength.

  19. Fully integrated micro coriolis mass flow sensor operating at atmospheric pressure

    NARCIS (Netherlands)

    Lötters, Joost Conrad; Lammerink, Theodorus S.J.; Haneveld, J.; Hageman, Tijmen Antoon Geert; Hageman, Tijmen A.G.; Wiegerink, Remco J.

    2012-01-01

    This paper discusses the design and realization of a micromachined micro Coriolis flow sensor with integrated electrodes for both electrostatic actuation and capacitive readout. The sensor was realized using semicircular channels just beneath the surface of the silicon wafer. The channels have thin

  20. Fully Integrated Micro Coriolis Mass Flow Sensor Operating at Atmospheric Pressure

    NARCIS (Netherlands)

    Wiegerink, Remco J.; Lammerink, Theodorus S.J.; Haneveld, J.; Hageman, T.A.G.; Hageman, Tijmen Antoon Geert; Lötters, Joost Conrad

    This paper discusses the design and realization of a micromachined micro Coriolis flow sensor with integrated electrodes for both electrostatic actuation and capacitive readout. The sensor was realized using semicircular channels just beneath the surface of the silicon wafer. The channels have thin

  1. Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

    International Nuclear Information System (INIS)

    Lauermann, M.; Weimann, C.; Palmer, R.; Schindler, P. C.; Koeber, S.; Freude, W.; Koos, C.; Rembe, C.

    2014-01-01

    We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB

  2. 75 FR 11939 - Integrated Silicon Solution, Inc. (ISSI); San Jose, CA; Notice of Termination of Investigation

    Science.gov (United States)

    2010-03-12

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF LABOR Employment and Training Administration Integrated Silicon Solution, Inc. (ISSI); San Jose, CA; Notice of... Silicon Solution, Inc., San Jose, California. The petitioner has requested that the petition be withdrawn...

  3. Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

    CERN Document Server

    Radamson, Henry

    2014-01-01

    Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p

  4. Crystalline Silicon Interconnected Strips (XIS). Introduction to a New, Integrated Device and Module Concept

    Energy Technology Data Exchange (ETDEWEB)

    Van Roosmalen, J.; Bronsveld, P.; Mewe, A.; Janssen, G.; Stodolny, M.; Cobussen-Pool, E.; Bennett, I.; Weeber, A.; Geerligs, B. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG, Petten (Netherlands)

    2012-06-15

    A new device concept for high efficiency, low cost, wafer based silicon solar cells is introduced. To significantly lower the costs of Si photovoltaics, high efficiencies and large reductions of metals and silicon costs are required. To enable this, the device architecture was adapted into low current devices by applying thin silicon strips, to which a special high efficiency back-contact heterojunction cell design was applied. Standard industrial production processes can be used for our fully integrated cell and module design, with a cost reduction potential below 0.5 euro/Wp. First devices have been realized demonstrating the principle of a series connected back contact hybrid silicon heterojunction module concept.

  5. Micromachined electrode array

    Science.gov (United States)

    Okandan, Murat; Wessendorf, Kurt O.

    2007-12-11

    An electrode array is disclosed which has applications for neural stimulation and sensing. The electrode array, in certain embodiments, can include a plurality of electrodes each of which is flexibly attached to a common substrate using a plurality of springs to allow the electrodes to move independently. In other embodiments of the electrode array, the electrodes can be fixed to the substrate. The electrode array can be formed from a combination of bulk and surface micromachining, and can include electrode tips having an electroplated metal (e.g. platinum, iridium, gold or titanium) or a metal oxide (e.g. iridium oxide) for biocompatibility. The electrode array can be used to form a part of a neural prosthesis, and is particularly well adapted for use in an implantable retinal prosthesis.

  6. Graphene-on-silicon hybrid plasmonic-photonic integrated circuits

    Science.gov (United States)

    Xiao, Ting-Hui; Cheng, Zhenzhou; Goda, Keisuke

    2017-06-01

    Graphene surface plasmons (GSPs) have shown great potential in biochemical sensing, thermal imaging, and optoelectronics. To excite GSPs, several methods based on the near-field optical microscope and graphene nanostructures have been developed in the past few years. However, these methods suffer from their bulky setups and low GSP-excitation efficiency due to the short interaction length between free-space vertical excitation light and the atomic layer of graphene. Here we present a CMOS-compatible design of graphene-on-silicon hybrid plasmonic-photonic integrated circuits that achieve the in-plane excitation of GSP polaritons as well as localized surface plasmon (SP) resonance. By employing a suspended membrane slot waveguide, our design is able to excite GSP polaritons on a chip. Moreover, by utilizing a graphene nanoribbon array, we engineer the transmission spectrum of the waveguide by excitation of localized SP resonance. Our theoretical and computational study paves a new avenue to enable, modulate, and monitor GSPs on a chip, potentially applicable for the development of on-chip electro-optic devices.

  7. Micromachining with Nanostructured Cutting Tools

    CERN Document Server

    Jackson, Mark J

    2013-01-01

    The purpose of the brief is to explain how nanostructured tools can be used to machine materials at the microscale.  The aims of the brief are to explain to readers how to apply nanostructured tools to micromachining applications. This book describes the application of nanostructured tools to machining engineering materials and includes methods for calculating basic features of micromachining. It explains the nature of contact between tools and work pieces to build a solid understanding of how nanostructured tools are made.

  8. Demonstration of robust micromachined jet technology and its application to realistic flow control problems

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Sung Pil [Inha University, Incheon (Korea, Republic of)

    2006-04-15

    This paper describes the demonstration of successful fabrication and initial characterization of micromachined pressure sensors and micromachined jets (microjets) fabricated for use in macro flow control and other applications. In this work, the microfabrication technology was investigated to create a micromachined fluidic control system with a goal of application in practical fluids problems, such as UAV (Unmanned Aerial Vehicle)-scale aerodynamic control. Approaches of this work include : (1) the development of suitable micromachined synthetic jets (microjets) as actuators, which obviate the need to physically extend micromachined structures into an external flow ; and (2) a non-silicon alternative micromachining fabrication technology based on metallic substrates and lamination (in addition to traditional MEMS technologies) which will allow the realization of larger scale, more robust structures and larger array active areas for fluidic systems. As an initial study, an array of MEMS pressure sensors and an array of MEMS modulators for orifice-based control of microjets have been fabricated, and characterized. Both pressure sensors and modulators have been built using stainless steel as a substrate and a combination of lamination and traditional micromachining processes as fabrication technologies.

  9. Development of a Novel Transparent Flexible Capacitive Micromachined Ultrasonic Transducer.

    Science.gov (United States)

    Pang, Da-Chen; Chang, Cheng-Min

    2017-06-20

    This paper presents the world's first transparent flexible capacitive micromachined ultrasonic transducer (CMUT) that was fabricated through a roll-lamination technique. This polymer-based CMUT has advantages of transparency, flexibility, and non-contacting detection which provide unique functions in display panel applications. Comprising an indium tin oxide-polyethylene terephthalate (ITO-PET) substrate, SU-8 sidewall and vibrating membranes, and silver nanowire transparent electrode, the transducer has visible-light transmittance exceeding 80% and can operate on curved surfaces with a 40 mm radius of curvature. Unlike the traditional silicon-based high temperature process, the CMUT can be fabricated on a flexible substrate at a temperature below 100 °C to reduce residual stress introduced at high temperature. The CMUT on the curved surfaces can detect a flat target and finger at distances up to 50 mm and 40 mm, respectively. The transparent flexible CMUT provides a better human-machine interface than existing touch panels because it can be integrated with a display panel for non-contacting control in a health conscious environment and the flexible feature is critical for curved display and wearable electronics.

  10. Development of a Novel Transparent Flexible Capacitive Micromachined Ultrasonic Transducer

    Directory of Open Access Journals (Sweden)

    Da-Chen Pang

    2017-06-01

    Full Text Available This paper presents the world’s first transparent flexible capacitive micromachined ultrasonic transducer (CMUT that was fabricated through a roll-lamination technique. This polymer-based CMUT has advantages of transparency, flexibility, and non-contacting detection which provide unique functions in display panel applications. Comprising an indium tin oxide-polyethylene terephthalate (ITO-PET substrate, SU-8 sidewall and vibrating membranes, and silver nanowire transparent electrode, the transducer has visible-light transmittance exceeding 80% and can operate on curved surfaces with a 40 mm radius of curvature. Unlike the traditional silicon-based high temperature process, the CMUT can be fabricated on a flexible substrate at a temperature below 100 °C to reduce residual stress introduced at high temperature. The CMUT on the curved surfaces can detect a flat target and finger at distances up to 50 mm and 40 mm, respectively. The transparent flexible CMUT provides a better human-machine interface than existing touch panels because it can be integrated with a display panel for non-contacting control in a health conscious environment and the flexible feature is critical for curved display and wearable electronics.

  11. Towards a Casimir Force Measurement between Micromachined Parallel Plate Structures

    Directory of Open Access Journals (Sweden)

    Remco J. Wiegerink

    2012-11-01

    Full Text Available Ever since its prediction, experimental investigation of the Casimir force has been of great scientific interest. Many research groups have successfully attempted quantifying the force with different device geometries; however, measurement of the Casimir force between parallel plates with sub-micron separation distance is still a challenging task, since it becomes extremely difficult to maintain sufficient parallelism between the plates. The Casimir force can significantly influence the operation of micro devices and to realize reliable and reproducible devices it is necessary to understand and experimentally verify the influence of the Casimir force at sub-micron scale. In this paper, we present the design principle, fabrication and characterization of micromachined parallel plate structures that could allow the measurement of the Casimir force with tunable separation distance in the range of 100 to 1000 nm. Initially, a gold coated parallel plate structure is explored to measure the Casimir force, but also other material combinations could be investigated. Using gold-silicon eutectic bonding, a reliable approach to bond chips with integrated suspended plates together with a well-defined separation distance in the order of 1–2 μm is developed.

  12. Long-term outdoor reliability assessment of a wireless unit for air-quality monitoring based on nanostructured films integrated on micromachined platforms.

    Science.gov (United States)

    Leccardi, Matteo; Decarli, Massimiliano; Lorenzelli, Leandro; Milani, Paolo; Mettala, Petteri; Orava, Risto; Barborini, Emanuele

    2012-01-01

    We have fabricated and tested in long-term field operating conditions a wireless unit for outdoor air quality monitoring. The unit is equipped with two multiparametric sensors, one miniaturized thermo-hygrometer, front-end analogical and digital electronics, and an IEEE 802.15.4 based module for wireless data transmission. Micromachined platforms were functionalized with nanoporous metal-oxides to obtain multiparametric sensors, hosting gas-sensitive, anemometric and temperature transducers. Nanoporous metal-oxide layer was directly deposited on gas sensing regions of micromachined platform batches by hard-mask patterned supersonic cluster beam deposition. An outdoor, roadside experiment was arranged in downtown Milan (Italy), where one wireless sensing unit was continuously operated side by side with standard gas chromatographic instrumentation for air quality measurements. By means of a router PC, data from sensing unit and other instrumentation were collected, merged, and sent to a remote data storage server, through an UMTS device. The whole-system robustness as well as sensor dataset characteristics were continuously characterized over a run-time period of 18 months.

  13. Lead-Free Piezoelectric Diaphragm Biosensors Based on Micro-Machining Technology and Chemical Solution Deposition.

    Science.gov (United States)

    Li, Xiaomeng; Wu, Xiaoqing; Shi, Peng; Ye, Zuo-Guang

    2016-01-12

    In this paper, we present a new approach to the fabrication of integrated silicon-based piezoelectric diaphragm-type biosensors by using sodium potassium niobate-silver niobate (0.82KNN-0.18AN) composite lead-free thin film as the piezoelectric layer. The piezoelectric diaphragms were designed and fabricated by micro-machining technology and chemical solution deposition. The fabricated device was very sensitive to the mass changes caused by various targets attached on the surface of diaphragm. The measured mass sensitivity value was about 931 Hz/μg. Its good performance shows that the piezoelectric diaphragm biosensor can be used as a cost-effective platform for nucleic acid testing.

  14. Lead-Free Piezoelectric Diaphragm Biosensors Based on Micro-Machining Technology and Chemical Solution Deposition

    Directory of Open Access Journals (Sweden)

    Xiaomeng Li

    2016-01-01

    Full Text Available In this paper, we present a new approach to the fabrication of integrated silicon-based piezoelectric diaphragm-type biosensors by using sodium potassium niobate-silver niobate (0.82KNN-0.18AN composite lead-free thin film as the piezoelectric layer. The piezoelectric diaphragms were designed and fabricated by micro-machining technology and chemical solution deposition. The fabricated device was very sensitive to the mass changes caused by various targets attached on the surface of diaphragm. The measured mass sensitivity value was about 931 Hz/μg. Its good performance shows that the piezoelectric diaphragm biosensor can be used as a cost-effective platform for nucleic acid testing.

  15. Experimental Demonstration of 7 Tb/s Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We demonstrate BER performance <10^-9 for a 1 Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers.......We demonstrate BER performance Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers....

  16. Robust Design of an Optical Micromachine for an Ophthalmic Application

    Directory of Open Access Journals (Sweden)

    Ingo Sieber

    2016-05-01

    Full Text Available This article describes an approach to the robust design of an optical micromachine consisting of a freeform optics, an amplification linkage, and an actuator. The robust design approach consists of monolithic integration principles to minimize assembly efforts and of an optimization of the functional components with respect to robustness against remaining assembly and manufacturing tolerances. The design approach presented involves the determination of the relevant tolerances arising from the domains manufacturing, assembly, and operation of the micromachine followed by a sensitivity analysis with the objective of identifying the worst offender. Subsequent to the above-described steps, an optimization of the functional design of the freeform optics with respect to a compensation of the effects of the tolerances is performed. The result leads to a robust design of the freeform optics and hence ensures a defined and optimal minimum performance of the micromachine in the presence of tolerances caused by the manufacturing processes and the operation of the micromachine. The micromachine under discussion is the tunable optics of an ophthalmic implant, an artificial accommodation system recently realized as a demonstration model at a scale of 2:1. The artificial accommodation system will be developed to replace the human crystalline lens in the case of a cataract.

  17. PECASE: All-Optical Photonic Integrated Circuits in Silicon

    Science.gov (United States)

    2011-01-14

    linear and nonlinear optical properties of silicon micro/ nano cavities for chip-scale sensing and signal processing. To achieve this goal, in what...enhancing the linear and nonlinear optical properties of silicon micro/ nano cavities for chip- scale sensing and signal processing. To achieve this...During the TIRS measurements, the samples are placed on a TEC -equipped stage with a built-in thermistor to monitor the temperature. The transmission

  18. Monolithic Micromachined Quartz Resonator based Infrared Focal Plane Arrays

    Science.gov (United States)

    2012-05-05

    prototypes of integrated micromachined IR detectors consisting of 200 μm diameter QCM resonators, 241 MHz (6.9 μm) thick 5 x 5 resonator arrays from Y-cut...of small QCM devices. • A novel measurement method for the real-time tracking of the resonance frequency based on impedance measurement around the...miniaturize QCM ? • Micromachining Quartz • Evaluation of QCM MicroArrays • Adsorption Experiments – Human Serum Albumin, IgG, and Human Fibrinogen Adsorption

  19. Integration of the End Cap TEC+ of the CMS Silicon Strip Tracker

    CERN Document Server

    Adler, Volker; Ageron, Michel; Agram, Jean-Laurent; Atz, Bernd; Barvich, Tobias; Baulieu, Guillaume; Beaumont, Willem; Beissel, Franz; Bergauer, Thomas; Berst, Jean-Daniel; Blüm, Peter; Bock, E; Bogelsbacher, F; de Boer, Wim; Bonnet, Jean-Luc; Bonnevaux, Alain; Boudoul, Gaelle; Bouhali, Othmane; Braunschweig, Wolfgang; Bremer, R; Brom, Jean-Marie; Butz, Erik; Chabanat, Eric; Chabert, Eric Christian; Clerbaux, Barbara; Contardo, Didier; De Callatay, Bernard; Dehm, Philip; Delaere, Christophe; Della Negra, Rodolphe; Dewulf, Jean-Paul; D'Hondt, Jorgen; Didierjean, Francois; Dierlamm, Alexander; Dirkes, Guido; Dragicevic, Marko; Drouhin, Frédéric; Ernenwein, Jean-Pierre; Esser, Hans; Estre, Nicolas; Fahrer, Manuel; Feld, Lutz; Fernández, J; Florins, Benoit; Flossdorf, Alexander; Flucke, Gero; Flügge, Günter; Fontaine, Jean-Charles; Freudenreich, Klaus; Frey, Martin; Friedl, Markus; Furgeri, Alexander; Giraud, Noël; Goerlach, Ulrich; Goorens, Robert; Graehling, Philippe; Grégoire, Ghislain; Gregoriev, E; Gross, Laurent; Hansel, S; Haroutunian, Roger; Hartmann, Frank; Heier, Stefan; Hermanns, Thomas; Heydhausen, Dirk; Heyninck, Jan; Hosselet, J; Hrubec, Josef; Jahn, Dieter; Juillot, Pierre; Kaminski, Jochen; Karpinski, Waclaw; Kaussen, Gordon; Keutgen, Thomas; Klanner, Robert; Klein, Katja; König, Stefan; Kosbow, M; Krammer, Manfred; Ledermann, Bernhard; Lemaître, Vincent; De Lentdecker, Gilles; Linn, Alexander; Lounis, Abdenour; Lübelsmeyer, Klaus; Lumb, Nicholas; Maazouzi, Chaker; Mahmoud, Tariq; Michotte, Daniel; Militaru, Otilia; Mirabito, Laurent; Müller, Thomas; Neukermans, Lionel; Ollivetto, C; Olzem, Jan; Ostapchuk, Andrey; Pandoulas, Demetrios; Pein, Uwe; Pernicka, Manfred; Perriès, Stephane; Piaseki, C; Pierschel, Gerhard; Piotrzkowski, Krzysztof; Poettgens, Michael; Pooth, Oliver; Rouby, Xavier; Sabellek, Andreas; Schael, Stefan; Schirm, Norbert; Schleper, Peter; Schmitz, Stefan Antonius; Schultz von Dratzig, Arndt; Siedling, Rolf; Simonis, Hans-Jürgen; Stahl, Achim; Steck, Pia; Steinbruck, G; Stoye, Markus; Strub, Roger; Tavernier, Stefaan; Teyssier, Daniel; Theel, Andreas; Trocmé, Benjamin; Udo, Fred; Van der Donckt, M; Van der Velde, C; Van Hove, Pierre; Vanlaer, Pascal; Van Lancker, Luc; Van Staa, Rolf; Vanzetto, Sylvain; Weber, Markus; Weiler, Thomas; Weseler, Siegfried; Wickens, John; Wittmer, Bruno; Wlochal, Michael; De Wolf, Eddi A; Zhukov, Valery; Zoeller, Marc Henning

    2009-01-01

    The silicon strip tracker of the CMS experiment has been completed and inserted into the CMS detector in late 2007. The largest sub-system of the tracker is its end cap system, comprising two large end caps (TEC) each containing 3200 silicon strip modules. To ease construction, the end caps feature a modular design: groups of about 20 silicon modules are placed on sub-assemblies called petals and these self-contained elements are then mounted into the TEC support structures. Each end cap consists of 144 petals, and the insertion of these petals into the end cap structure is referred to as TEC integration. The two end caps were integrated independently in Aachen (TEC+) and at CERN (TEC--). This note deals with the integration of TEC+, describing procedures for end cap integration and for quality control during testing of integrated sections of the end cap and presenting results from the testing.

  20. Effect of weak metallic contamination on silicon epitaxial layer and gate oxide integrity

    Energy Technology Data Exchange (ETDEWEB)

    Mello, D.; Coccorese, C.; Ferlito, E.; Sciuto, G.; Ricciari, R.; Barbarino, P.; Astuto, M. [STMicroelectronics, Physics Lab. Stradale primosole, 50 I-95121 Catania (Italy)

    2011-08-15

    The detection of metallic contaminants in microelectronics devices is one of the main issues in production line. In fact they could diffuse rapidly into the silicon bulk and establishing energy states into the silicon energy-band gap. The presence of trace of metals on the silicon surface can also degrade the gate oxide integrity, cause structural defect in silicon epitaxial layers or anomalies in silicon/gate oxide interface. Usually in semiconductor manufacturing superficial metallic contamination is monitored using Total X-ray Reflection Fluorescence spectroscopy (TXRF) and performing specific electrical measurements on dedicated capacitor. In this work a weak contamination, undetected by TXRF analysis, was revealed by Transmission Electron Microscopy (TEM) observing lattice damaging and Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) detecting an anomalous Na distribution in depth profile. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Capacitive Micromachined Ultrasonic Transducers (CMUTs for Underwater Imaging Applications

    Directory of Open Access Journals (Sweden)

    Jinlong Song

    2015-09-01

    Full Text Available A capacitive micromachined ultrasonic transducer structure for use in underwater imaging is designed, fabricated and tested in this paper. In this structure, a silicon dioxide insulation layer is inserted between the top electrodes and the vibration membrane to prevent ohmic contact. The capacitance-voltage (C-V characteristic curve shows that the transducer offers suitable levels of hysteresis and repeatability performance. The −6 dB center frequency is 540 kHz and the transducer has a bandwidth of 840 kHz for a relative bandwidth of 155%. Underwater pressure of 143.43 Pa is achieved 1 m away from the capacitive micromachined ultrasonic transducer under 20  excitation. Two-dimensional underwater ultrasonic imaging, which is able to prove that a rectangular object is present underwater, is achieved. The results presented here indicate that our work will be highly beneficial for the establishment of an underwater ultrasonic imaging system.

  2. Integrated GaN photonic circuits on silicon (100) for second harmonic generation

    OpenAIRE

    Xiong, Chi; Pernice, Wolfram; Ryu, Kevin K.; Schuck, Carsten; Fong, King Y.; Palacios, Tomas; Tang, Hong X.

    2014-01-01

    We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \\{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and ...

  3. The CMS Silicon Strip Tracker from integration to start-up

    CERN Document Server

    Ciulli, V

    2008-01-01

    The CMS Silicon Strip Tracker (SST) integration has been completed. After an extensive period of testing with cosmic muons the detector is ready for the final installation inside the CMS magnet. This paper will review the integration procedures and the tests completed to ensure that SST performs according to specifications.

  4. Characterization of porous silicon integrated in liquid chromatography chips

    NARCIS (Netherlands)

    Tiggelaar, Roald M.; Verdoold, Vincent; Eghbali, H.; Desmet, G.; Gardeniers, Johannes G.E.

    2009-01-01

    Properties of porous silicon which are relevant for use of the material as a stationary phase in liquid chromatography chips, like porosity, pore size and specific surface area, were determined with high-resolution SEM and N2 adsorption–desorption isotherms. For the anodization conditions

  5. Integrated programmable photonic filter on the silicon -on- insulator platform

    DEFF Research Database (Denmark)

    Liao, Shasha; Ding, Yunhong; Peucheret, Christophe

    2014-01-01

    We propose and demonstrate a silicon - on - insulator (SOI) on - chip programmable filter based on a four - tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heater s. We further demonstrate...

  6. Batch fabrication of scanning microscopy probes for thermal and magnetic imaging using standard micromachining

    NARCIS (Netherlands)

    Sarajlic, Edin; Vermeer, Rolf; Delalande, M.Y.; Siekman, Martin Herman; Huijink, R.; Fujita, H.; Abelmann, Leon

    2010-01-01

    We present a process for batch fabrication of a novel scanning microscopy probe for thermal and magnetic imaging using standard micromachining and conventional optical contact lithography. The probe features an AFM-type cantilever with a sharp pyramidal tip composed of four freestanding silicon

  7. Acoustic lens for capacitive micromachined ultrasonic transducers

    Science.gov (United States)

    Chang, Chienliu; Firouzi, Kamyar; Park, Kwan Kyu; Sarioglu, Ali Fatih; Nikoozadeh, Amin; Yoon, Hyo-Seon; Vaithilingam, Srikant; Carver, Thomas; Khuri-Yakub, Butrus T.

    2014-08-01

    Capacitive micromachined ultrasonic transducers (CMUTs) have great potential to compete with traditional piezoelectric transducers in therapeutic ultrasound applications. In this paper we have designed, fabricated and developed an acoustic lens formed on the CMUT to mechanically focus ultrasound. The acoustic lens was designed based on the paraxial theory and made of silicone rubber for acoustic impedance matching and encapsulation. The CMUT was fabricated based on the local oxidation of silicon (LOCOS) and fusion-bonding. The fabricated CMUT was verified to behave like an electromechanical resonator in air and exhibited wideband response with a center frequency of 2.2 MHz in immersion. The fabrication for the acoustic lens contained two consecutive mold castings and directly formed on the surface of the CMUT. Applied with ac burst input voltages at the center frequency, the CMUT with the acoustic lens generated an output pressure of 1.89 MPa (peak-to-peak) at the focal point with an effective focal gain of 3.43 in immersion. Compared to the same CMUT without a lens, the CMUT with the acoustic lens demonstrated the ability to successfully focus ultrasound and provided a viable solution to the miniaturization of the multi-modality forward-looking endoscopes without electrical focusing.

  8. Acoustic lens for capacitive micromachined ultrasonic transducers

    International Nuclear Information System (INIS)

    Chang, Chienliu; Firouzi, Kamyar; Sarioglu, Ali Fatih; Nikoozadeh, Amin; Yoon, Hyo-Seon; Vaithilingam, Srikant; Carver, Thomas; Khuri-Yakub, Butrus T; Kyu Park, Kwan

    2014-01-01

    Capacitive micromachined ultrasonic transducers (CMUTs) have great potential to compete with traditional piezoelectric transducers in therapeutic ultrasound applications. In this paper we have designed, fabricated and developed an acoustic lens formed on the CMUT to mechanically focus ultrasound. The acoustic lens was designed based on the paraxial theory and made of silicone rubber for acoustic impedance matching and encapsulation. The CMUT was fabricated based on the local oxidation of silicon (LOCOS) and fusion-bonding. The fabricated CMUT was verified to behave like an electromechanical resonator in air and exhibited wideband response with a center frequency of 2.2 MHz in immersion. The fabrication for the acoustic lens contained two consecutive mold castings and directly formed on the surface of the CMUT. Applied with ac burst input voltages at the center frequency, the CMUT with the acoustic lens generated an output pressure of 1.89 MPa (peak-to-peak) at the focal point with an effective focal gain of 3.43 in immersion. Compared to the same CMUT without a lens, the CMUT with the acoustic lens demonstrated the ability to successfully focus ultrasound and provided a viable solution to the miniaturization of the multi-modality forward-looking endoscopes without electrical focusing. (paper)

  9. A new semicustom integrated bipolar amplifier for silicon strip detectors

    International Nuclear Information System (INIS)

    Zimmerman, T.

    1989-01-01

    The QPA02 is a four channel DC coupled two stage transimpedance amplifier designed at Fermilab on a semicustom linear array (Quickchip 2S) manufactured by Tektronix. The chip was developed as a silicon strip amplifier but may have other applications as well. Each channel consists of a preamplifier and a second stage amplifier/sharper with differential output which can directly drive a transmission line (90 to 140 ohms). External bypass capacitors are the only discrete components required. QPA02 has been tested and demonstrated to be an effective silicon strip amplifier. Other applications may exist which can use this amplifier or a modified version of this amplifier. For example, another design is now in progress for a wire chamber amplifier, QPA03, to be reported later. Only a relatively small effort was required to modify the design and layout for this application. 11 figs

  10. Electron beam micromachining of plastics

    Czech Academy of Sciences Publication Activity Database

    Dupák, Libor

    2014-01-01

    Roč. 49, 5-6 (2014), s. 310-314 ISSN 0861-4717 R&D Projects: GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01; GA MŠk EE.2.3.20.0103 Institutional support: RVO:68081731 Keywords : micromachining of plastics * Electron beam Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  11. Optoelectronic Device Integration in Silicon (OpSIS)

    Science.gov (United States)

    2015-10-26

    device was fabricated in a CMOS-compatible process using 248 nm lithography, with only one patterning step. 14 Fig. 1 Schematic layout of the...Yang, Shuyu; Zhu, Xiaoliang; Li, Qi; Guan, Hang; Magill, Peter; Bergman, Keren; Baehr- Jones, Thomas; Hochberg, Michael; “Quantum dot SOA /silicon...filter drop (solid) and through (dashed) spectrum, and SOA gain spectrum at 150 mA (blue). The expected lasing wavelength (1552.3 nm) is labeled by a red

  12. Ultrahigh-speed hybrid laser for silicon photonic integrated chips

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Park, Gyeong Cheol; Ran, Qijiang

    2013-01-01

    and light-emitting diode (LED) structures have been proposed so far. Our hybrid laser is one of these efforts [2]. The hybrid laser consists of a dielectric reflector, a III-V semiconductor active material, and a high-index-contrast grating (HCG) reflector formed in the silicon layer of a silicon......-oninsulator (SOI) wafer. ‘Hybrid’ indicates that a III-V active material is wafer-bonded to a silicon SOI wafer. In the hybrid laser, light is vertically amplified between the dielectric and the HCG reflectors, while the light output is laterally emitted to a normal Si ridge waveguide that is connected to the HCG...... reflector. The HCG works as a vertical mirror as well as a vertical-to-lateral coupler. Very small field penetration into the HCG allows for 3-4 times smaller modal volume than typical vertical-cavity surface-emitting lasers (VCSELs). This leads to high direct modulation speed. Details on device operating...

  13. The Development of Micromachined Gyroscope Structure and Circuitry Technology

    OpenAIRE

    Dunzhu Xia; Cheng Yu; Lun Kong

    2014-01-01

    This review surveys micromachined gyroscope structure and circuitry technology. The principle of micromachined gyroscopes is first introduced. Then, different kinds of MEMS gyroscope structures, materials and fabrication technologies are illustrated. Micromachined gyroscopes are mainly categorized into micromachined vibrating gyroscopes (MVGs), piezoelectric vibrating gyroscopes (PVGs), surface acoustic wave (SAW) gyroscopes, bulk acoustic wave (BAW) gyroscopes, micromachined electrostati...

  14. Wafer scale nano-membrane supported on a silicon microsieve using thin-film transfer technology

    NARCIS (Netherlands)

    Unnikrishnan, S.; Jansen, Henricus V.; Berenschot, Johan W.; Elwenspoek, Michael Curt

    A new micromachining method to fabricate wafer scale nano-membranes is described. The delicate thin-film nano-membrane is supported on a robust silicon microsieve fabricated by plasma etching. The silicon sieve is micromachined independently of the thin-film, which is later transferred onto it by

  15. Fabrication of High-Frequency pMUT Arrays on Silicon Substrates

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Zawada, Tomasz; Hansen, Karsten

    2010-01-01

    A novel technique based on silicon micromachining for fabrication of linear arrays of high-frequency piezoelectric micromachined ultrasound transducers (pMUT) is presented. Piezoelectric elements are formed by deposition of lead zirconia titanate into etched features of a silicon substrate...

  16. Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

    Science.gov (United States)

    Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

    2017-12-13

    Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

  17. Silicon analog components device design, process integration, characterization, and reliability

    CERN Document Server

    El-Kareh, Badih

    2015-01-01

    This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.

  18. Vascular tissue engineering by computer-aided laser micromachining.

    Science.gov (United States)

    Doraiswamy, Anand; Narayan, Roger J

    2010-04-28

    Many conventional technologies for fabricating tissue engineering scaffolds are not suitable for fabricating scaffolds with patient-specific attributes. For example, many conventional technologies for fabricating tissue engineering scaffolds do not provide control over overall scaffold geometry or over cell position within the scaffold. In this study, the use of computer-aided laser micromachining to create scaffolds for vascular tissue networks was investigated. Computer-aided laser micromachining was used to construct patterned surfaces in agarose or in silicon, which were used for differential adherence and growth of cells into vascular tissue networks. Concentric three-ring structures were fabricated on agarose hydrogel substrates, in which the inner ring contained human aortic endothelial cells, the middle ring contained HA587 human elastin and the outer ring contained human aortic vascular smooth muscle cells. Basement membrane matrix containing vascular endothelial growth factor and heparin was to promote proliferation of human aortic endothelial cells within the vascular tissue networks. Computer-aided laser micromachining provides a unique approach to fabricate small-diameter blood vessels for bypass surgery as well as other artificial tissues with complex geometries.

  19. Capacitive micromachined ultrasonic transducers with through-wafer interconnects

    Science.gov (United States)

    Zhuang, Xuefeng

    Capacitive micromachined ultrasonic transducer (CMUT) is a promising candidate for making ultrasound transducer arrays for applications such as 3D medical ultrasound, non-destructive evaluation and chemical sensing. Advantages of CMUTs over traditional piezoelectric transducers include low-cost batch fabrication, wide bandwidth, and ability to fabricate arrays with broad operation frequency range and different geometric configurations on a single wafer. When incorporated with through-wafer interconnects, a CMUT array can be directly integrated with a front-end integrated circuit (IC) to achieve compact packaging and to mitigate the effects of the parasitic capacitance from the connection cables. Through-wafer via is the existing interconnect scheme for CMUT arrays, and many other types of micro-electro-mechanical system (MEMS) devices. However, to date, no successful through-wafer via fabrication technique compatible with the wafer-bonding method of making CMUT arrays has been demonstrated. The through-wafer via fabrication steps degrade the surface conditions of the wafer, reduce the radius of curvature, thus making it difficult to bond. This work focuses on new through-wafer interconnect techniques that are compatible with common MEMS fabrication techniques, including both surface-micromachining and direct wafer-to-wafer fusion bonding. In this dissertation, first, a through-wafer via interconnect technique with improved characteristics is presented. Then, two implementations of through-wafer trench isolation are demonstrated. The through-wafer trench methods differ from the through-wafer vias in that the electrical conduction is through the bulk silicon instead of the conductor in the vias. In the first implementation, a carrier wafer is used to provide mechanical support; in the second, mechanical support is provided by a silicon frame structure embedded inside the isolation trenches. Both implementations reduce fabrication complexity compared to the through

  20. Graphene metallization of high-stress silicon nitride resonators for electrical integration.

    Science.gov (United States)

    Lee, Sunwoo; Adiga, Vivekananda P; Barton, Robert A; van der Zande, Arend M; Lee, Gwan-Hyoung; Ilic, B Rob; Gondarenko, Alexander; Parpia, Jeevak M; Craighead, Harold G; Hone, James

    2013-09-11

    High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing, signal processing, and optomechanics. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conductive coating for Si3N4 membranes reduces the quality factor by less than 30% on average, which is minimal when compared to the effect of conventional metallization layers such as chromium or aluminum. The electrical integration of Si3N4-Graphene (SiNG) heterostructure resonators is demonstrated with electrical readout and electrostatic tuning of the frequency by up to 0.3% per volt. These studies demonstrate the feasibility of hybrid graphene/nitride mechanical resonators in which the electrical properties of graphene are combined with the superior mechanical performance of silicon nitride.

  1. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea; Svendsen, Winnie Edith; Dimaki, Maria

    2016-01-01

    This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project....... The presented research is based on this sensor structure and investigates its potential as a versatile biomarker detection platform by evaluating different functionalization approaches. The functionalization of the silicon sensor surface with organic molecules was investigated in detail to determine...... the suitability of different methods for the preparation of organic interfaces for protein attachment. Oxide-free silicon surfaces offer unique possibilities to create highly sensitive sensor surfaces for charge detection due to the lack of an insulating oxide layer, but the highly reactive surface presents...

  2. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea

    This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project....... The presented research is based on this sensor structure and investigates its potential as a versatile biomarker detection platform by evaluating different functionalization approaches. The functionalization of the silicon sensor surface with organic molecules was investigated in detail to determine...... the suitability of different methods for the preparation of organic interfaces for protein attachment. Oxide-free silicon surfaces offer unique possibilities to create highly sensitive sensor surfaces for charge detection due to the lack of an insulating oxide layer, but the highly reactive surface presents...

  3. High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

    DEFF Research Database (Denmark)

    Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld

    2017-01-01

    is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually......-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling...... manipulating high-dimensional quantum states in a compact and stable manner. Our demonstration paves the way to utilize state-of-the-art multicore fibers for noise tolerance high-dimensional quantum key distribution, and boost silicon photonics for high information efficiency quantum communications....

  4. In-plane tunnelling field-effect transistor integrated on Silicon.

    Science.gov (United States)

    Fina, Ignasi; Apachitei, Geanina; Preziosi, Daniele; Deniz, Hakan; Kriegner, Dominik; Marti, Xavier; Alexe, Marin

    2015-09-25

    Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. On the other hand, there has been a numerous demonstrations of the so-called magnetoelectric effect (coupling between ferroelectric and ferromagnetic order) using nearly-perfect heterostructures. However, the scrutiny of the ingredients that lead to magnetoelectric coupling, namely magnetic moment and a conducting channel, does not necessarily require structural perfection. In this work, we circumvent the stringent requirements for epilayers while preserving the magnetoelectric functionality in a silicon-integrated device. Additionally, we have identified an in-plane tunnelling mechanism which responds to a vertical electric field. This genuine electroresistance effect is distinct from known resistive-switching or tunnel electro resistance.

  5. An innovative large scale integration of silicon nanowire-based field effect transistors

    Science.gov (United States)

    Legallais, M.; Nguyen, T. T. T.; Mouis, M.; Salem, B.; Robin, E.; Chenevier, P.; Ternon, C.

    2018-05-01

    Since the early 2000s, silicon nanowire field effect transistors are emerging as ultrasensitive biosensors while offering label-free, portable and rapid detection. Nevertheless, their large scale production remains an ongoing challenge due to time consuming, complex and costly technology. In order to bypass these issues, we report here on the first integration of silicon nanowire networks, called nanonet, into long channel field effect transistors using standard microelectronic process. A special attention is paid to the silicidation of the contacts which involved a large number of SiNWs. The electrical characteristics of these FETs constituted by randomly oriented silicon nanowires are also studied. Compatible integration on the back-end of CMOS readout and promising electrical performances open new opportunities for sensing applications.

  6. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

    Science.gov (United States)

    Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

    2018-04-01

    Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

  7. Integration of 2D materials on a silicon photonics platform for optoelectronics applications

    Directory of Open Access Journals (Sweden)

    Youngblood Nathan

    2016-12-01

    Full Text Available Owing to enormous growth in both data storage and the demand for high-performance computing, there has been a major effort to integrate telecom networks on-chip. Silicon photonics is an ideal candidate, thanks to the maturity and economics of current CMOS processes in addition to the desirable optical properties of silicon in the near IR. The basics of optical communication require the ability to generate, modulate, and detect light, which is not currently possible with silicon alone. Growing germanium or III/V materials on silicon is technically challenging due to the mismatch between lattice constants and thermal properties. One proposed solution is to use two-dimensional materials, which have covalent bonds in-plane, but are held together by van der Waals forces out of plane. These materials have many unique electrical and optical properties and can be transferred to an arbitrary substrate without lattice matching requirements. This article reviews recent progress toward the integration of 2D materials on a silicon photonics platform for optoelectronic applications.

  8. Omega-X micromachining system

    International Nuclear Information System (INIS)

    Miller, D.M.

    1978-01-01

    A micromachining tool system with X- and omega-axes is used to machine spherical, aspherical, and irregular surfaces with a maximum contour error of 100 nonometers (nm) and surface waviness of no more than 0.8 nm RMS. The omega axis, named for the angular measurement of the rotation of an eccentric mechanism supporting one end of a tool bar, enables the pulse increments of the tool toward the workpiece to be as little as 0 to 4.4 nm. A dedicated computer coordinates motion in the two axes to produce the workpiece contour. Inertia is reduced by reducing the mass pulsed toward the workpiece to about one-fifth of its former value. The tool system includes calibration instruments to calibrate the micromachining tool system. Backlash is reduced and flexing decreased by using a rotary table and servomotor to pulse the tool in the omega-axis instead of a ball screw mechanism. A thermally-stabilized spindle roates the workpiece and is driven by a motor not mounted on the micromachining tool base through a torque-smoothing pulley and vibrationless rotary coupling. Abbe offset errors are almost eliminated by tool setting and calibration at spindle center height. Tool contour and workpiece contour are gaged on the machine; this enables the source of machining errors to be determined more readily, because the workpiece is gaged before its shape can be changed by removal from the machine

  9. Micromachined Ultrasonic Transducers for 3-D Imaging

    DEFF Research Database (Denmark)

    Christiansen, Thomas Lehrmann

    of state-of-the-art 3-D ultrasound systems. The focus is on row-column addressed transducer arrays. This previously sparsely investigated addressing scheme offers a highly reduced number of transducer elements, resulting in reduced transducer manufacturing costs and data processing. To produce...... such transducer arrays, capacitive micromachined ultrasonic transducer (CMUT) technology is chosen for this project. Properties such as high bandwidth and high design flexibility makes this an attractive transducer technology, which is under continuous development in the research community. A theoretical...... capable of producing 62+62-element row-column addressed CMUT arrays with negligible charging issues. The arrays include an integrated apodization, which reduces the ghost echoes produced by the edge waves in such arrays by 15:8 dB. The acoustical cross-talk is measured on fabricated arrays, showing a 24 d...

  10. Manufacturing microsystems-on-a-chip with 5-level surface micromachining technology

    Energy Technology Data Exchange (ETDEWEB)

    Sniegowski, J.; Rodgers, M.S.

    1998-05-01

    An agile microsystem manufacturing technology has been developed that provides unprecedented 5 levels of independent polysilicon surface-micromachine films for the designer. Typical surface-micromachining processes offer a maximum of 3 levels, making this the most complex surface-micromachining process technology developed to date. Leveraged from the extensive infrastructure present in the microelectronics industry, the manufacturing method of polysilicon surface-micromachining offers similar advantages of high-volume, high-reliability, and batch-fabrication to microelectromechanical systems (MEMS) as has been accomplished with integrated circuits (ICs). These systems, comprised of microscopic-sized mechanical elements, are laying the foundation for a rapidly expanding, multi-billion dollar industry 2 which impacts the automotive, consumer product, and medical industries to name only a few.

  11. The Silicon Lattice Accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Spencer, J

    2003-11-24

    Previously, the generalized luminosity L was defined and calculated for all incident channels based on an NLC e{sup +}e{sup -} design. Alternatives were then considered to improve the differing beam-beam effects in the e{sup -}e{sup -}, e{gamma} and {gamma}{gamma} channels. One example was tensor beams composed of bunchlets n{sub ijk} implemented with a laser-driven, silicon accelerator based on micromachining techniques. Problems were considered and expressions given for radiative broadening due to bunchlet manipulation near the final focus to optimize luminosity via charge enhancement, neutralization or bunch shaping. Because the results were promising, we explore fully integrated structures that include sources, optics (for both light and particles) and acceleration in a common format--an accelerator-on-chip. Acceptable materials (and wavelengths) must allow velocity synchronism between many laser and electron pulses with optimal efficiency in high radiation environments. There are obvious control and cost advantages that accrue from using silicon structures if radiation effects can be made acceptable and the structures fabricated. Tests related to deep etching, fabrication and radiation effects on candidate amorphous and crystalline materials indicate Si(1.2 < {lambda}{sub L} < 10 {micro}m) and fused c-SiO{sub 2}(0.3 < {lambda}{sub L} < 4 {micro}m) to be ideal.

  12. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi

    2014-01-01

    Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. This journal is © the Partner Organisations 2014.

  13. Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics.

    Science.gov (United States)

    Chen, Che; Youngblood, Nathan; Peng, Ruoming; Yoo, Daehan; Mohr, Daniel A; Johnson, Timothy W; Oh, Sang-Hyun; Li, Mo

    2017-02-08

    We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

  14. A CMOS microdisplay with integrated controller utilizing improved silicon hot carrier luminescent light sources

    Science.gov (United States)

    Venter, Petrus J.; Alberts, Antonie C.; du Plessis, Monuko; Joubert, Trudi-Heleen; Goosen, Marius E.; Janse van Rensburg, Christo; Rademeyer, Pieter; Fauré, Nicolaas M.

    2013-03-01

    Microdisplay technology, the miniaturization and integration of small displays for various applications, is predominantly based on OLED and LCoS technologies. Silicon light emission from hot carrier electroluminescence has been shown to emit light visibly perceptible without the aid of any additional intensification, although the electrical to optical conversion efficiency is not as high as the technologies mentioned above. For some applications, this drawback may be traded off against the major cost advantage and superior integration opportunities offered by CMOS microdisplays using integrated silicon light sources. This work introduces an improved version of our previously published microdisplay by making use of new efficiency enhanced CMOS light emitting structures and an increased display resolution. Silicon hot carrier luminescence is often created when reverse biased pn-junctions enter the breakdown regime where impact ionization results in carrier transport across the junction. Avalanche breakdown is typically unwanted in modern CMOS processes. Design rules and process design are generally tailored to prevent breakdown, while the voltages associated with breakdown are too high to directly interact with the rest of the CMOS standard library. This work shows that it is possible to lower the operating voltage of CMOS light sources without compromising the optical output power. This results in more efficient light sources with improved interaction with other standard library components. This work proves that it is possible to create a reasonably high resolution microdisplay while integrating the active matrix controller and drivers on the same integrated circuit die without additional modifications, in a standard CMOS process.

  15. Compact Micromachined Infrared Bandpass Filters for Planetary Spectroscopy

    Science.gov (United States)

    Merrell, Willie C., II; Aslam, Shahid; Brown, Ari D.; Chervenak, James A.; Huang, Wei-Chung; Quijada, Manuel; Wollack, Edward

    2011-01-01

    The future needs of space based observational planetary and astronomy missions include low mass and small volume radiometric instruments that can operate in high radiation and low temperature environments. Here we focus on a central spectroscopic component, the bandpass filter. We model the bandpass response of the filters to target the wavelength of the resonance peaks at 20, 40, and 60 micrometers and report good agreement between the modeled and measured response. We present a technique of using common micromachining processes for semiconductor fabrication to make compact, free standing resonant metal mesh filter arrays with silicon support frames. The process can accommodate multiple detector array architectures and the silicon frame provides lightweight mechanical support with low form factor. We also present a conceptual hybridization of the filters with a detector array.

  16. A Micro-Machined Gyroscope for Rotating Aircraft

    Directory of Open Access Journals (Sweden)

    Fuxue Zhang

    2012-07-01

    Full Text Available In this paper we present recent work on the design, fabrication by silicon micromachining, and packaging of a new gyroscope for stabilizing the autopilot of rotating aircraft. It operates based on oscillation of the silicon pendulum between two torsion girders for detecting the Coriolis force. The oscillation of the pendulum is initiated by the rolling and deflecting motion of the rotating carrier. Therefore, the frequency and amplitude of the oscillation are proportional to the rolling frequency and deflecting angular rate of the rotating carrier, and are measured by the sensing electrodes. A modulated pulse with constant amplitude and unequal width is obtained by a linearizing process of the gyroscope output signal and used to control the deflection of the rotating aircraft. Experimental results show that the gyroscope has a resolution of 0.008 °/s and a bias of 56.18 °/h.

  17. Mechanical Micro-Machining and Laser Micro-Machining

    Science.gov (United States)

    Lou, Ning

    Ever since the 2000s, the manufacturing industry has gained tremendous development in terms of precision. Therefore, micro-machining as a cutting-edge technique has drawn more and more attention in precision-machining realm and been able to take on challenges brought by this. This doctoral program explores the micro-machining realm and results are consisted of two major parts. First, the machinability of "difficult-to-cut" materials is of interest where Inconel 718 is selected as its characteristics include outstanding strength and lackluster thermal conductivity. For its extraordinary hardness and sustainability, coated cemented carbide tools are selected for micro-endmilling processes on Inconel. The cutting forces along x and y axis, respectively, are analyzed to reveal any impact from the inputs. Moreover, the chip morphology is examined. Suggestions are made for future research guidance. As first part serves as preliminary work of the program, the research carries onto the second part - laser micro-machining which is considerably different from conventional machining. The laser being considered employs pulsewidth in realm of picosecond (10-12 s) and frequency of tens of kilohertz. This results in a very small energy distribution per pulse (microJ) and is called ultrafast or ultrashort laser machining. To study this type of technology, an all-new machining system needs to be built incorporating highly advanced apparatus such as laser head, scan head, attenuator, and beam expander, et al. From exit of laser head to workpiece, laser need to travel through all optical components and any deviation may leads to severe out-of-focus error as the depth of focus is within micron level. Thus, optical alignment along laser travelling route is key to successful machining results. This part of research focuses on the design and assembly of this system as a reliable structure offering both support and alignment to the laser delivery. 3-Dimentional (3D) Computer

  18. Radiation hardness of silicon integrated nano photonic devices

    NARCIS (Netherlands)

    Ebeling, R.; Yang, S.; Bodis, P.; Harmsma, P.J.; Berg, J.H. van den; Boom, C.W. de; Yousefi, M.

    2010-01-01

    Integrated Nano Photonic (INP) sensors will be used in medical and space applications in the near future. Therefore, these devices must also be able to withstand harsh environments without failure. For space and medical applications radiation hardness is a very important issue. At TNO we have

  19. Micro-machined calorimetric biosensors

    Science.gov (United States)

    Doktycz, Mitchel J.; Britton, Jr., Charles L.; Smith, Stephen F.; Oden, Patrick I.; Bryan, William L.; Moore, James A.; Thundat, Thomas G.; Warmack, Robert J.

    2002-01-01

    A method and apparatus are provided for detecting and monitoring micro-volumetric enthalpic changes caused by molecular reactions. Micro-machining techniques are used to create very small thermally isolated masses incorporating temperature-sensitive circuitry. The thermally isolated masses are provided with a molecular layer or coating, and the temperature-sensitive circuitry provides an indication when the molecules of the coating are involved in an enthalpic reaction. The thermally isolated masses may be provided singly or in arrays and, in the latter case, the molecular coatings may differ to provide qualitative and/or quantitative assays of a substance.

  20. Platinum microheater integrated silicon optical bench assembly for endoscopic optical coherence tomography

    International Nuclear Information System (INIS)

    Xu, Y; Wang, M F; Premachandran, C S; Chen, K W S; Chen, N; Olivo, M

    2010-01-01

    A novel platinum microheater and comb isolator integrated silicon optical bench (SiOB) assembly method has been successfully demonstrated to provide electrical connection and high precision alignment for a two-axis gimbal-less micromirror. Localized heating and wetting of plastic core micro solder balls is achieved by the integrated platinum heater, and the maximum measured temperature of the platinum heater is about 250 °C. In addition, assembly procedures are significantly simplified by involving a comb isolator made by deep reactive ion etching (DRIE) in comparison with our previously reported design. DRIE is also applied to form a 45° trench on the lower silicon substrate with a nearly vertical sidewall for the micromirror. Hence, the overall dimensions of the SiOB assembly can be reduced further to meet the requirements of endoscopic optical coherence tomography (EOCT) for miniaturization

  1. PDMS-on-silicon microsystems: Integration of polymer micro/nanostructures for new MEMS device functions

    Science.gov (United States)

    Tung, Yi-Chung

    2005-11-01

    Modern technologies found in military, space-craft, automotive, and telecommunications applications strongly demand reductions of the manufacturing cost, power consumption, size, and weight of integrated sensors and actuators. The research field of microelectromechanical systems (MEMS) has seen significant technological innovations and advancements to meet this demand in the last two decades. Historically, MEMS technology has been seen as an offspring of silicon-based integrated circuit (IC) technology. But recently, the roles that polymer materials play in MEMS have been more pronounced due to their cost effectiveness, manufacturability, and compatibility with micro/nanoscale biological and chemical systems. Among these polymers, an organic elastomer, Polydimethylsiloxane (PDMS), has become one of the most popular materials because of its unique material properties and moldability suited for low-cost rapid prototyping based on a fabrication technique called soft lithography. However, PDMS micro/nanostructures, not allowed to be integrated with other silicon-based devices, find their limited use in MEMS other than in passive microfluidic components. The lack of a technology bridging the gap between silicon and PDMS prohibits us to realize new MEMS devices potentially resulting from the simultaneous use of these two materials. This research explores a fully new technological concept of "PDMS-on-silicon microsystems." "PDMS-on-silicon microsystems" refers to a class of novel MEMS devices integrating PDMS micro/nanostructures onto silicon actuators and/or sensors. The research aims to demonstrate a new type of MEMS devices taking advantage of benefits resulting from both of silicon and PDMS. To achieve this goal, this work develops a new MEMS fabrication technique called "soft-lithographic lift-off and grafting (SLLOG)." The SLLOG process starts with soft lithography-based molding and release of a three-dimensional (3D) PDMS microstructure. This is followed by

  2. W-band Phased Array Systems using Silicon Integrated Circuits

    Science.gov (United States)

    Kim, Sang Young

    This thesis presents the silicon-based on-chip W-band phased array systems. An improved quadrature all-pass filter (QAF) and its implementation in 60--80 GHz active phase shifter using 0.13 microm SiGe BiCMOS technology is presented. It is demonstrated that with the inclusion of an Rs/R in the high Q branches of C and L, the sensitivity to the loading capacitance, therefore the I/Q phase and amplitude errors are minimized. This technique is especially suited for wideband millimeter-wave circuits where the loading capacitance (CL) is comparable to the filter capacitance (C). A prototype 60--80 GHz active phased shifter using the improved QAF is demonstrated. The overall chip size is 1.15 x 0.92 mm2 with the power consumption of 108 mW. The measured S11 and S22 are pass pi-network. The chip size is 0.45 x 0.3 mm2 without pads and consumes virtually no power. The measured S11 and S22 is 8 dBm and the simulated IIP3 is > 22 dBm. A low-power 76--84 GHz 4-element phased array receiver using the designed passive phase shifter is presented. The power consumption is minimized by using a single-ended design and alternating the amplifiers and phase shifter cells to result in a low noise figure at a low power consumption. A variable gain amplifier and the 11° phase shifter are used to correct for the rms gain and phase errors at different operating frequencies. The overall chip size is 2.0 x 2.7 mm2 with the current consumption of 18 mA/channel with 1.8 V supply voltage. The measured S11 and S 22 is circuits are designed differentially to result in less sensitivity to packaging effect and high channel-to-channel isolation. The overall chip size is 5.0 x 5.8 mm 2 with the power consumption of 500--600 mA from 2 V supply voltage. The measured S11 and S22 for all 16 phase states is 10 dB for 76.4--90 GHz with the rms gain error of -45 dB. The measured NF is 11.2--13 dB at 77--87 GHz at the maximum gain state. And the measured input P1dB is 20 dBm at 77 GHz and -25.8 dBm at the

  3. An improved PIN photodetector with integrated JFET on high-resistivity silicon

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Piemonte, Claudio; Boscardin, Maurizio; Gregori, Paolo; Zorzi, Nicola; Fazzi, Alberto; Pignatel, Giorgio U.

    2006-01-01

    We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed

  4. Integrated investigation approach for determining mechanical properties of poly-silicon membranes

    OpenAIRE

    Brueckner, J.; Dehe, A.; Auerswald, E.; Dudek, R.; Michel, B.; Rzepka, S.

    2014-01-01

    A methodology is presented for determining mechanical properties of free-standing thin films such as poly-silicon membranes. The integrated investigation approach comprises test structure development, mechanical testing, and numerical simulation. All membrane test structures developed and manufactured consist of the same material but have different stiffness due to variations in the geometric design. The mechanical tests apply microscopic loads utilizing a nanoindentation tool. Young's modulu...

  5. Determination of young's modulus of PZT and CO80Ni20 thin films by means of micromachined cantilevers

    NARCIS (Netherlands)

    Nazeer, H.; Abelmann, Leon; Tas, Niels Roelof; van Honschoten, J.W.; Siekman, Martin Herman; Elwenspoek, Michael Curt

    2009-01-01

    This paper presents a technique to determine the Young’s modulus and residual stress of thin films using a simple micromachined silicon cantilever as the test structure. An analytical relation was developed based on the shift in resonance frequency caused by the addition of a thin film on the

  6. Fabrication and Characterization of Capacitive Micromachined Ultrasonic Transducers with Low-Temperature Wafer Direct Bonding

    Directory of Open Access Journals (Sweden)

    Xiaoqing Wang

    2016-12-01

    Full Text Available This paper presents a fabrication method of capacitive micromachined ultrasonic transducers (CMUTs by wafer direct bonding, which utilizes both the wet chemical and O2plasma activation processes to decrease the bonding temperature to 400 °C. Two key surface properties, the contact angle and surface roughness, are studied in relation to the activation processes, respectively. By optimizing the surface activation parameters, a surface roughness of 0.274 nm and a contact angle of 0° are achieved. The infrared images and static deflection of devices are assessed to prove the good bonding effect. CMUTs having silicon membranes with a radius of 60 μm and a thickness of 2 μm are fabricated. Device properties have been characterized by electrical and acoustic measurements to verify their functionality and thus to validate this low-temperature process. A resonant frequency of 2.06 MHz is obtained by the frequency response measurements. The electrical insertion loss and acoustic signal have been evaluated. This study demonstrates that the CMUT devices can be fabricated by low-temperature wafer direct bonding, which makes it possible to integrate them directly on top of integrated circuit (IC substrates.

  7. A bipolar analog front-end integrated circuit for the SDC silicon tracker

    International Nuclear Information System (INIS)

    Kipnis, I.; Spieler, H.; Collins, T.

    1993-11-01

    A low-noise, low-power, high-bandwidth, radiation hard, silicon bipolar-transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDC silicon tracker. The IC was designed and tested at LBL and was fabricated using AT ampersand T's CBIC-U2, 4 GHz f T complementary bipolar technology. Each channel contains the following functions: low-noise preamplification, pulse shaping and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 μm pitch double-sided silicon strip detector. The chip measures 6.8 mm x 3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. rms at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to 4 times the noise level, a 16 nsec time-walk for 1.25 to 10fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a Φ=10 14 protons/cm 2 have been performed on the IC, demonstrating the radiation hardness of the complementary bipolar process

  8. Proceedings of the International Conference on Integrated Micro/Nanotechnology for Space Applications

    Science.gov (United States)

    1995-01-01

    The recent evolution of microelectronic technologies coupled with the growth of micro-electro-mechanical systems (MEMS) has had significant impact in the commercial sector. The focus of this conference was to anticipate and extend the incorporation of nano-electronics and MEMS into application specific integrated microinstruments (ASIM's) in space systems. Presentations ranged from mission application of nano-satellites to silicon micromachining for photonic applications.

  9. Silicon-Based Technology for Integrated Waveguides and mm-Wave Systems

    DEFF Research Database (Denmark)

    Jovanovic, Vladimir; Gentile, Gennaro; Dekker, Ronald

    2015-01-01

    IC processing is used to develop technology for silicon-filled millimeter-wave-integrated waveguides. The front-end process defines critical waveguide sections and enables integration of dedicated components, such as RF capacitors and resistors. Wafer gluing is used to strengthen the mechanical...... insertion loss is only 0.12 dB/mm at 105 GHz. The optimized planar transition, the components of a beam-forming network, and a slotted waveguide antenna array are fabricated as further technology demonstrators. The broadside radiation of the antenna array has a beam steering of 63° using a frequency...

  10. Online analysis of oxygen inside silicon-glass microreactors with integrated optical sensors

    DEFF Research Database (Denmark)

    Ehgartner, Josef; Sulzer, Philipp; Burger, Tobias

    2016-01-01

    A powerful online analysis set-up for oxygen measurements within microfluidic devices is presented. It features integration of optical oxygen sensors into microreactors, which enables contactless, accurate and inexpensive readout using commercially available oxygen meters via luminescent lifetime...... measurements in the frequency domain (phase shifts). The fabrication and patterning of sensor layers down to a size of 100 μm in diameter is performed via automated airbrush spraying and was used for the integration into silicon-glass microreactors. A novel and easily processable sensor material is also...

  11. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    Science.gov (United States)

    Bickford, Justin Robert

    Waferbonding is a technique that integrates different semiconductors together, in order to obtain hybrid structures that exploit the strengths of each material. Work was done at the University of California at San Diego to investigate the waferbonding of III/V compound semiconductors to silicon using a metal interface. GaAs and other III/V compound semiconductors surpass silicon in their ability to create high performance microwave devices, while silicon offers an inexpensive platform with a proven digital architecture that can interface with microwave devices and support passive components and driver circuitry. Intimate integration of the two will be required, as mixed RF/digital and optical/digital systems for communications devices such as cell phones, wi-fi, and optical communications systems are pushed smaller, faster, and to higher power. The metalbonding implementation of a proposed heterogeneous monolithic microwave integrated circuit (HMMIC) system was investigated, and was shown to extend the capabilities of existing homogeneous monolithic microwave integrated circuit (MMIC) systems. The main goals of this work were two-fold; first to implement a robust heterogeneous integration technique, and second, to show that this approach uniquely improves upon existing microwave integration technology. The metalbonding technique investigated sparsely integrated GaAs structures onto silicon, in pursuit of this HMMIC scheme. Both bottom-up and top-down fabrication methods were implemented. These approaches required the development of a myriad of meticulously designed fabrication procedures capable of avoiding the many incompatibilities between the compound semiconductor, bondmetal, and silicon materials. The bondmetal interface, provided by these techniques, broadens the scope of existing monolithic microwave integrated circuit technology design possibilities. Essential bond interface properties were measured to establish the performance of this heterogeneous

  12. Development of hybrid photon detectors with integrated silicon pixel readout for the RICH counters of LHCb

    CERN Document Server

    Alemi, M; Formenti, F; Gys, Thierry; Piedigrossi, D; Puertolas, D; Rosso, E; Snoeys, W; Wyllie, Ken H

    1999-01-01

    We report on the ongoing work towards a hybrid photon detector with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment at the Large Hadron Collider at CERN. The photon detector is based $9 on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a fast, binary readout chip with matching pixel electronics. The $9 performance of a half-scale prototype is presented, together with the developments and tests of a full-scale tube with large active area. Specific requirements for pixel front-end and readout electronics in LHCb are outlined, and $9 recent results obtained from pixel chips applicable to hybrid photon detector design are summarized.

  13. Effects of plasma-deposited silicon nitride passivation on the radiation hardness of CMOS integrated circuits

    International Nuclear Information System (INIS)

    Clement, J.J.

    1980-01-01

    The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. The hardness degradation is manifested by increased radiation-induced threshold voltage shifts caused principally by the charging of new interface states and, to a lesser extent, by the trapping of holes created upon exposure to ionizing radiation. The threshold voltage shifts are a strong function of the deposition temperature, and show very little dependence on thickness for films deposited at 300 0 C. There is some correlation between the threshold voltage shifts and the hydrogen content of the PECVD silicon nitride films used as the final passivation layer as a function of deposition temperature. The mechanism by which the hydrogen contained in these films may react with the Si/SiO 2 interface is not clear at this point

  14. Micro direct methanol fuel cell with perforated silicon-plate integrated ionomer membrane

    DEFF Research Database (Denmark)

    Larsen, Jackie Vincent; Dalslet, Bjarke Thomas; Johansson, Anne-Charlotte Elisabeth Birgitta

    2014-01-01

    and catalytic electrode. AC impedance spectroscopy is utilized alongside IV characterization to determine the influence of the plate perforation geometries on the cell performance. It is found that higher ratios of perforation increases peak power density, with the highest achieved being 2.5 mW cm−2......This article describes the fabrication and characterization of a silicon based micro direct methanol fuel cell using a Nafion ionomer membrane integrated into a perforated silicon plate. The focus of this work is to provide a platform for micro- and nanostructuring of a combined current collector...... at a perforation ratio of 40.3%. The presented fuel cells also show a high volumetric peak power density of 2 mW cm−3 in light of the small system volume of 480 μL, while being fully self contained and passively feed....

  15. Evaluation of charge-integrating amplifier with silicon MOSFETs for cryogenic readout

    Science.gov (United States)

    Noda, Manabu; Shibai, Hiroshi; Watabe, Toyoki; Hirao, Takanori; Yoda, Hiroyuki; Nagata, Hirohisa; Nakagawa, Takao; Kawada, Mitsunobu

    1998-08-01

    Low-noise and low-power cryogenic readout electronics are developed for a focal plane instrument of the IR Imaging Surveyor. We measured the static characteristics and the noise spectra of several types of silicon MOSFETs at the cryogenic temperature where silicon JFETs do not work well due to the carrier freeze-out. The 'kink' behavior of n- channel MOSFETs was observed below the carrier freeze-out temperature, but it was not obvious for the p-channel MOSFET. It was demonstrated the p-channel MOSFETs can be used for the cryogenic readout electronics of the IRIS's far-IR array with an acceptable performance. The amplifier integrated with these MOSFETs showed low-noise at 2K under a low power consumption of 1 (mu) W per MOSFET. We now design and evaluate several circuits that are fabricated by the CMOS process for cryogenic readout.

  16. Direct monolithic integration of vertical single crystalline octahedral molecular sieve nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Carretero-Genevrier, Adrian [Institut des Nanotechnologies de Lyon (INL), UMR-CNRS 5270, Ecole Central de Lyon, Ecully (France); Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Sorbonne Univ., UPMC Univ. Paris 06, CNRS, College de France, Paris (France); Oro-Sole, Judith [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Gazquez, Jaume [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Magen, Cesar [Univ. de Zaragoza, Zaragoza (Spain); Miranda, Laura [Sorbonne Univ., UPMC Univ. Paris 06, CNRS, College de France, Paris (France); Puig, Teresa [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Obradors, Xavier [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Ferain, Etienne [Univ. Catholique de Louvain, Louvain-la-Neuve (Belgium); Sanchez, Clement [Sorbonne Univ., UPMC Univ. Paris 06, CNRS, College de France, Paris (France); Rodriguez-Carvajal, Juan [Institut Laue-Langevin, Grenoble Cedex (France); Mestres, Narcis [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain)

    2013-12-13

    We developed an original strategy to produce vertical epitaxial single crystalline manganese oxide octahedral molecular sieve (OMS) nanowires with tunable pore sizes and compositions on silicon substrates by using a chemical solution deposition approach. The nanowire growth mechanism involves the use of track-etched nanoporous polymer templates combined with the controlled growth of quartz thin films at the silicon surface, which allowed OMS nanowires to stabilize and crystallize. α-quartz thin films were obtained after thermal activated crystallization of the native amorphous silica surface layer assisted by Sr2+- or Ba2+-mediated heterogeneous catalysis in the air at 800 °C. These α-quartz thin films work as a selective template for the epitaxial growth of randomly oriented vertical OMS nanowires. Furthermore, the combination of soft chemistry and epitaxial growth opens new opportunities for the effective integration of novel technological functional tunneled complex oxides nanomaterials on Si substrates.

  17. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Lan; Harburg, Daniel V.; Rogers, John A., E-mail: jrogers@illinois.edu [Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S Goodwin Ave., Urbana, Illinois 61801 (United States); Bozler, Carl [Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420 (United States); Omenetto, Fiorenzo [Department of Biomedical Engineering, Department of Physics, Tufts University, 4 Colby St., Medford, Massachusetts 02155 (United States)

    2015-01-05

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

  18. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    International Nuclear Information System (INIS)

    Yin, Lan; Harburg, Daniel V.; Rogers, John A.; Bozler, Carl; Omenetto, Fiorenzo

    2015-01-01

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems

  19. Parametric studies on the nanosecond laser micromachining of the materials

    Science.gov (United States)

    Tański, M.; Mizeraczyk, J.

    2016-12-01

    In this paper the results of an experimental studies on nanosecond laser micromachining of selected materials are presented. Tested materials were thin plates made of aluminium, silicon, stainless steel (AISI 304) and copper. Micromachining of those materials was carried out using a solid state laser with second harmonic generation λ = 532 nm and a pulse width of τ = 45 ns. The effect of laser drilling using single laser pulse and a burst of laser pulses, as well as laser cutting was studied. The influence of laser fluence on the diameter and morphology of a post ablation holes drilled with a single laser pulse was investigated. The ablation fluence threshold (Fth) of tested materials was experimentally determined. Also the drilling rate (average depth per single laser pulse) of holes drilled with a burst of laser pulses was determined for all tested materials. The studies of laser cutting process revealed that a groove depth increases with increasing average laser power and decreasing cutting speed. It was also found that depth of the laser cut grooves is a linear function of number of repetition of a cut. The quantitative influence of those parameters on the groove depth was investigated.

  20. Development of a micromachined electrostatically suspended gyroscope

    OpenAIRE

    Damrongsak, Badin

    2009-01-01

    In this thesis, a new approach based on an electrostatically suspended gyroscope (ESG) was explored in order to improve the performance of micromachined gyroscopes. Typically, a conventional micromachined gyroscope consists of a vibrating mass suspended on elastic beams that are anchored to a substrate. It measures the rotation rate of a body of interest by detecting rotation-induced Coriolis acceleration of a vibrating structure. Such a gyro is sensitive to fabrication imperfections an...

  1. Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

    Science.gov (United States)

    Fu, Enjin

    Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier

  2. 31-mode piezoelectric micromachined ultrasonic transducer with PZT thick film by granule spraying in vacuum process

    Science.gov (United States)

    Jung, Joontaek; Annapureddy, Venkateswarlu; Hwang, Geon-Tae; Song, Youngsup; Lee, Wonjun; Kang, Woojin; Ryu, Jungho; Choi, Hongsoo

    2017-05-01

    A piezoelectric micromachined ultrasonic transducer (pMUT) is an ideal device for portable medical diagnosis systems, intravascular ultrasound systems, and ultrasonic cameras because of its favorable characteristics including small size, acoustic impedance matching with the body, low power consumption, and simple integration with the systems. Despite these advantages, practical applications are limited because of insufficient acoustic pressure of the pMUT caused by the thin active piezoelectric layer. Here, we report the fabrication of a thick piezoelectric Pb(Zr,Ti)O3 (PZT) film-based pMUT device having high deflection at low driving voltage using the granule spraying in vacuum (GSV) process. Pre-patterned high-density thick (exceeding 8 μm) PZT films were grown on 6-inch-diameter Si/SiO2/Ti/Pt silicon-on-insulator wafers at room temperature at a high deposition rate of ˜5 μm min-1. The fabrication process using the proposed GSV process was simple and fast, and the deflection of the pMUT exhibited a high value of 0.8 μm.

  3. Hybrid graphene/silicon integrated optical isolators with photonic spin–orbit interaction

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Jingwen; Sun, Xiankai, E-mail: xksun@cuhk.edu.hk [Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories (Hong Kong); Shun Hing Institute of Advanced Engineering, The Chinese University of Hong Kong, Shatin, New Territories (Hong Kong); Xi, Xiang; Yu, Zejie [Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories (Hong Kong)

    2016-04-11

    Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphene's magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spins exhibit different responses to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with the extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 μm. Featuring graphene's CMOS compatibility and substantially reduced device footprint, our proposal sheds light on monolithic integration of nonreciprocal photonic devices.

  4. Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers.

    Science.gov (United States)

    Li, Nanxi; Magden, Emir Salih; Su, Zhan; Singh, Neetesh; Ruocco, Alfonso; Xin, Ming; Byrd, Matthew; Callahan, Patrick T; Bradley, Jonathan D B; Baiocco, Christopher; Vermeulen, Diedrik; Watts, Michael R

    2018-02-05

    Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al 2 O 3 :Ho 3+ glass is used as gain medium, which provides broadband emission around 2 µm. By varying the distributed feedback grating period and Al 2 O 3 :Ho 3+ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 µm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at > 2 µm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region.

  5. Integrating Silicon detector with segmentation for scanning transmission X-ray microscopy

    Science.gov (United States)

    Feser, Michael; Hornberger, Benjamin; Jacobsen, Chris; De Geronimo, Gianluigi; Rehak, Pavel; Holl, Peter; Strüder, Lothar

    2006-09-01

    Scanning transmission X-ray microscopes require detectors with high quantum efficiency and wide dynamic range. While large area detectors provide absorption contrast, the addition of spatial segmentation adds phase contrast imaging capabilities. We describe a charge integrating Silicon detector for use at energies from 200-1000 eV. The detector uses patterned rectifying junctions on high-resistivity n-type Silicon, with separate current readout for each segment. The detector has been subdivided into eight regions arranged in a circular geometry according to the beam profile in a scanning X-ray microscope. The uncooled chip is fully depleted by a positive bias voltage applied at the ohmic contact on the back side. X-rays are collected on the radiation-hard back side with very high efficiency ( >75% for 250 eV X-rays), and compact, low-noise electronics integrate the current from the detector segments. The RMS noise of the combined system is about 500 electrons/channel for a 1 ms integration time, which is equivalent to about five photons per channel at 360 eV X-ray energy.

  6. Integrating Silicon detector with segmentation for scanning transmission X-ray microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Feser, Michael [Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY 11794-3800 (United States); Hornberger, Benjamin [Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY 11794-3800 (United States)]. E-mail: benjamin.hornberger@stonybrook.edu; Jacobsen, Chris [Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY 11794-3800 (United States); De Geronimo, Gianluigi [Brookhaven National Laboratory, Instrumentation Division, Upton, NY 11973 (United States); Rehak, Pavel [Brookhaven National Laboratory, Instrumentation Division, Upton, NY 11973 (United States)]. E-mail: rehak@bnl.gov; Holl, Peter [PNSensor GmbH, Roemerstr. 28, 80803 Munich (Germany); Strueder, Lothar [MPI fuer Extraterrestrische Physik, 85741 Garching (Germany)

    2006-09-15

    Scanning transmission X-ray microscopes require detectors with high quantum efficiency and wide dynamic range. While large area detectors provide absorption contrast, the addition of spatial segmentation adds phase contrast imaging capabilities. We describe a charge integrating Silicon detector for use at energies from 200-1000eV. The detector uses patterned rectifying junctions on high-resistivity n-type Silicon, with separate current readout for each segment. The detector has been subdivided into eight regions arranged in a circular geometry according to the beam profile in a scanning X-ray microscope. The uncooled chip is fully depleted by a positive bias voltage applied at the ohmic contact on the back side. X-rays are collected on the radiation-hard back side with very high efficiency (>75% for 250eV X-rays), and compact, low-noise electronics integrate the current from the detector segments. The RMS noise of the combined system is about 500 electrons/channel for a 1ms integration time, which is equivalent to about five photons per channel at 360eV X-ray energy.

  7. Integration of the end cap TEC+ of the CMS silicon strip tracker

    Energy Technology Data Exchange (ETDEWEB)

    Bremer, Richard

    2008-04-28

    CMS is the first large experiment of high-energy particle physics whose inner tracking system is exclusively instrumented with silicon detector modules. This tracker comprises 15 148 silicon strip modules enclosing the interaction point in 10-12 layers. The 1. Physikalisches Institut B of RWTH Aachen was deeply involved in the completion of the end caps of the tracking system. The institute played a leading role in the end cap design, produced virtually all support structures and several important electrical components, designed and built the laser alignment system of the tracker, performed system tests and finally integrated one of the two end caps in Aachen. This integration constitutes the central part of the present thesis work. The main focus was on the development of methods to recognise defects early in the integration process and to assert the detector's functionality. Characteristic quantities such as the detector noise or the optical gain of the readout chain were determined during integration as well as during a series of tests performed after transport of the end cap from Aachen to CERN. The procedures followed during the mechanical integration of the detector and during the commissioning of integrated sectors are explained, and the software packages developed for quality assurance are described. In addition, results of the detector readout are presented. During the integration phase, sub-structures of the end cap - named petals - were subjected to a reception test which has also been designed and operated as part of this thesis work. The test setup and software developed for the test are introduced and an account of the analysis of the recorded data is given. Before the end cap project entered the production phase, a final test beam experiment was performed in which the suitability of a system of two fully equipped petals for operation at the LHC was checked. The measured ratio of the signal induced in the silicon sensors by minimal ionising

  8. Integration of the end cap TEC+ of the CMS silicon strip tracker

    International Nuclear Information System (INIS)

    Bremer, Richard

    2008-01-01

    CMS is the first large experiment of high-energy particle physics whose inner tracking system is exclusively instrumented with silicon detector modules. This tracker comprises 15 148 silicon strip modules enclosing the interaction point in 10-12 layers. The 1. Physikalisches Institut B of RWTH Aachen was deeply involved in the completion of the end caps of the tracking system. The institute played a leading role in the end cap design, produced virtually all support structures and several important electrical components, designed and built the laser alignment system of the tracker, performed system tests and finally integrated one of the two end caps in Aachen. This integration constitutes the central part of the present thesis work. The main focus was on the development of methods to recognise defects early in the integration process and to assert the detector's functionality. Characteristic quantities such as the detector noise or the optical gain of the readout chain were determined during integration as well as during a series of tests performed after transport of the end cap from Aachen to CERN. The procedures followed during the mechanical integration of the detector and during the commissioning of integrated sectors are explained, and the software packages developed for quality assurance are described. In addition, results of the detector readout are presented. During the integration phase, sub-structures of the end cap - named petals - were subjected to a reception test which has also been designed and operated as part of this thesis work. The test setup and software developed for the test are introduced and an account of the analysis of the recorded data is given. Before the end cap project entered the production phase, a final test beam experiment was performed in which the suitability of a system of two fully equipped petals for operation at the LHC was checked. The measured ratio of the signal induced in the silicon sensors by minimal ionising particles

  9. The SuperB Silicon Vertex Tracker and 3D vertical integration

    CERN Document Server

    Re, Valerio

    2011-01-01

    The construction of the SuperB high luminosity collider was approved and funded by the Italian government in 2011. The performance specifications set by the target luminosity of this machine (> 10^36 cm^-2 s^-1) ask for the development of a Silicon Vertex Tracker with high resolution, high tolerance to radiation and excellent capability of handling high data rates. This paper reviews the R&D activity that is being carried out for the SuperB SVT. Special emphasis is given to the option of exploiting 3D vertical integration to build advanced pixel sensors and readout electronics that are able to comply with SuperB vertexing requirements.

  10. Integrated programmable photonic filter on the silicon-on-insulator platform.

    Science.gov (United States)

    Liao, Shasha; Ding, Yunhong; Peucheret, Christophe; Yang, Ting; Dong, Jianji; Zhang, Xinliang

    2014-12-29

    We propose and demonstrate a silicon-on-insulator (SOI) on-chip programmable filter based on a four-tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heaters. We further demonstrate the tunability of the filter central wavelength, bandwidth and variable passband shape. The tuning range of the central wavelength is at least 42% of the free spectral range. The bandwidth tuning range is at least half of the free spectral range. Our scheme has distinct advantages of compactness, capability for integrating with electronics.

  11. Physical and electrical characterization of corundum substrates and epitaxial silicon layers in view of fabricating integrated circuits

    International Nuclear Information System (INIS)

    Trilhe, J.; Legal, H.; Rolland, G.

    1975-01-01

    The S.O.S. technology (silicon on insulating substrate) allows compact, radiation hard, fast integrated circuits to be fabricated. It is noticeable that complex integrated circuits on corundum substrates obtained with various fabrication processes have various electrical characteristics. Possible correlations between the macroscopic defects of the substrate and the electrical characteristics of the circuit were investigated [fr

  12. Co-integrated 1.3µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s.

    Science.gov (United States)

    Ferrotti, Thomas; Blampey, Benjamin; Jany, Christophe; Duprez, Hélène; Chantre, Alain; Boeuf, Frédéric; Seassal, Christian; Ben Bakir, Badhise

    2016-12-26

    In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.

  13. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

    Science.gov (United States)

    Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

    2017-12-01

    One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

  14. Recess integration of micro-cleaved laser diode platelets with dielectric waveguides on silicon

    Science.gov (United States)

    Fonstad, Clifton G., Jr.; Rumpler, Joseph J.; Barkley, Edward R.; Perkins, James M.; Famenini, Shaya

    2008-02-01

    Ongoing research directed at integrating 1.55 μm III-V ridge waveguide gain elements (i.e. diode lasers and semiconductor optical amplifiers) co-axially aligned with, and coupled to, silicon oxy-nitride waveguides on silicon substrates is presented. The integration techniques used are highly modular and consistent with fabricating waveguides on Si-CMOS wafers and doing the integration of the III-V gain elements after all standard front- and back-end Si processing has been completed. A novel micro-cleaving technique is used to produce active ridge waveguide platelets on the order of 6 µm thick and 100 μm wide, with precisely controlled lengths, in the current work 300 +/- 1 μm, and cleaved end facets. Typical ridge guide micro-cleaved platelet lasers have thresholds under 30 mA. Micro-cleaved platelets are bonded within dielectric recesses etched through the oxy-nitride (SiO xN y) waveguides on a wafer so the ridge and SiO xN y waveguides are co-axially aligned. Transmission measurements indicate coupling losses are as low as 5 db with air filling the gaps between the waveguide ends, and measurements made through filled gaps indicate that the coupling losses can be reduced to below 1.5 dB with a high index (n = 2.2) dielectric fill. Simulations indicate that with further optimization of the mode profile in the III-V waveguide the loss can be reduced to below 1 dB. The paper concludes with a discussion of device design and optimization for co-axial recess integration, and with a comparison of co-axial coupling with the hybrid evanescent vertical coupling III-V/Si integration approach recently introduced by researchers at UCSB and Intel.

  15. Integration Science and Technology of Silicon-Based Ceramics and Composites:Technical Challenges and Opportunities

    Science.gov (United States)

    Singh, M.

    2013-01-01

    Ceramic integration technologies enable hierarchical design and manufacturing of intricate ceramic and composite parts starting with geometrically simpler units that are subsequently joined to themselves and/or to metals to create components with progressively higher levels of complexity and functionality. However, for the development of robust and reliable integrated systems with optimum performance for high temperature applications, detailed understanding of various thermochemical and thermomechanical factors is critical. Different technical approaches are required for the integration of ceramic to ceramic and ceramic to metal systems. Active metal brazing, in particular, is a simple and cost-effective method to integrate ceramic to metallic components. Active braze alloys usually contain a reactive filler metal (e.g., Ti, Cr, V, Hf etc) that promotes wettability and spreading by inducing chemical reactions with the ceramics and composites. In this presentation, various examples of brazing of silicon nitride to themselves and to metallic systems are presented. Other examples of joining of ceramic composites (C/SiC and SiC/SiC) using ceramic interlayers and the resulting microstructures are also presented. Thermomechanical characterization of joints is presented for both types of systems. In addition, various challenges and opportunities in design, fabrication, and testing of integrated similar (ceramic-ceramic) and dissimilar (ceramic-metal) material systems will be discussed. Potential opportunities and need for the development of innovative design philosophies, approaches, and integrated system testing under simulated application conditions will also be presented.

  16. The NeuroMedicator—a micropump integrated with silicon microprobes for drug delivery in neural research

    International Nuclear Information System (INIS)

    Spieth, S; Schumacher, A; Kallenbach, C; Messner, S; Zengerle, R

    2012-01-01

    The NeuroMedicator is a micropump integrated with application-specific silicon microprobes aimed for drug delivery in neural research with small animals. The micropump has outer dimensions of 11 × 15 × 3 mm 3 and contains 16 reservoirs each having a capacity of 0.25 µL. Thereby, the reservoirs are interconnected in a pearl-chain-like manner and are connected to two 8 mm long silicon microprobes. Each microprobe has a cross-sectional area of 250 × 250 µm 2 and features an integrated drug delivery channel of 50 × 50 µm 2 with an outlet of 25 µm in diameter. The drug is loaded to the micropump prior to implantation. After implantation, individual 0.25 µL portions of drug can be sequentially released by short heating pulses applied to a polydimethylsiloxane (PDMS) layer containing Expancel® microspheres. Due to local, irreversible thermal expansion of the elastic composite material, the drug is displaced from the reservoirs and released through the microprobe outlet directly to the neural tissue. While implanted, leakage of drug by diffusion occurs due to the open microprobe outlets. The maximum leakage within the first three days after implantation is calculated to be equivalent to 0.06 µL of drug solution. (paper)

  17. Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

    Science.gov (United States)

    Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

    2016-09-19

    Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

  18. Integrated graphene based modulators enabled by interfacing plasmonic slot and silicon waveguides

    DEFF Research Database (Denmark)

    Xiao, Sanshui

    Graphene has offered a new paradigm for extremely fast and active optoelectronic devices due to its unique electronic and optical properties [1]. With the combination of high-index dielectric waveguides/resonators, several integrated graphene-based optical modulators have already been demonstrated...... [2,3]. However, the optical modes in these systems are inherently strongly localized in the high-index materials, thus jeopardizing light-graphene interactions. Surface plasmon polaritons have been shown the ability to manipulate light in the nanoscale, while at the same time giving possibility...... to direct more optical energy to the material interface where graphene could reside. We propose and demonstrate efficient graphene plasmonic waveguide electro-optical modulators, which are fully integrated with the silicon-on-insulator platform. We experimentally achieve the tunability of 0.13 d...

  19. Micromachined chemical sensor with integrated microelectronics

    International Nuclear Information System (INIS)

    Smith, J.; Sniegowski, J.; Koehler, D.; Ricco, T.; Martin, S.; McWhorter, P.

    1992-01-01

    With today's continued emphasis on environmental safety and health issues, a resurgence of interest has developed in the area of chemical sensors. These sensors would typically be used to monitor contamination hazards such as underground storage tanks or to assess previous contamination at waste disposal sites. Human exposure to chemical hazards can also be monitored. Additionally, these sensors can be used as part of a manufacturing process control loop. One type of sensor suitable for gas phase monitoring of chemicals is the quartz resonator or quartz crystal microbalance (QCM) sensor. In this type of sensor, a thickness shear mode (TSM) quartz resonator is coated with a film that interacts with the chemical species of interest. Changes in the mass and elasticity of this film are reflected as changes in the resonant properties of the device. Therefore, the presence of the species of interest can be detected by monitoring the frequency of an oscillator based on the resonance of the quartz. These QCM sensors compete with surface acoustic wave (SAW) devices as a means for monitoring gas phase species. SAW devices are typically more sensitive to small amounts of a species, but the instrumentation associated with a SAW device is an order of magnitude more expensive than the instrumentation associated with a TSM wave resonator since the SAW devices operate in the 100's of MHz frequency regime while quartz resonators operate in the 5--25 MHz regime. We are working to improve the sensitivity of the QCM sensor by increasing the frequency of the device to 25 MHz (compared to the typical 5 MHz crystal) and by increasing the frequency stability of the system to an ultimate goal of 0.1 Hz. The 25 MHz QCM has already been achieved and once the stability goal is achieved, the QCM will have the same sensitivity as a SAW device

  20. Physics-based signal processing algorithms for micromachined cantilever arrays

    Science.gov (United States)

    Candy, James V; Clague, David S; Lee, Christopher L; Rudd, Robert E; Burnham, Alan K; Tringe, Joseph W

    2013-11-19

    A method of using physics-based signal processing algorithms for micromachined cantilever arrays. The methods utilize deflection of a micromachined cantilever that represents the chemical, biological, or physical element being detected. One embodiment of the method comprises the steps of modeling the deflection of the micromachined cantilever producing a deflection model, sensing the deflection of the micromachined cantilever and producing a signal representing the deflection, and comparing the signal representing the deflection with the deflection model.

  1. Fabrication of a silver particle-integrated silicone polymer-covered metal stent against sludge and biofilm formation and stent-induced tissue inflammation.

    Science.gov (United States)

    Lee, Tae Hoon; Jang, Bong Seok; Jung, Min Kyo; Pack, Chan Gi; Choi, Jun-Ho; Park, Do Hyun

    2016-10-14

    To reduce tissue or tumor ingrowth, covered self-expandable metal stents (SEMSs) have been developed. The effectiveness of covered SEMSs may be attenuated by sludge or stone formation or by stent clogging due to the formation of biofilm on the covering membrane. In this study, we tested the hypothesis that a silicone membrane containing silver particles (Ag-P) would prevent sludge and biofilm formation on the covered SEMS. In vitro, the Ag-P-integrated silicone polymer-covered membrane exhibited sustained antibacterial activity, and there was no definite release of silver ions from the Ag-P-integrated silicone polymer membrane at any time point. Using a porcine stent model, in vivo analysis demonstrated that the Ag-P-integrated silicone polymer-covered SEMS reduced the thickness of the biofilm and the quantity of sludge formed, compared with a conventional silicone-covered SEMS. In vivo, the release of silver ions from an Ag-P-integrated silicone polymer-covered SEMS was not detected in porcine serum. The Ag-P-integrated silicone polymer-covered SEMS also resulted in significantly less stent-related bile duct and subepithelium tissue inflammation than a conventional silicone polymer-covered SEMS. Therefore, the Ag-P-integrated silicone polymer-covered SEMS reduced sludge and biofilm formation and stent-induced pathological changes in tissue. This novel SEMS may prolong the stent patency in clinical application.

  2. Silicon Hard-Stop Mesas for 3D Integration of Superconducting Qubits

    Science.gov (United States)

    Kim, David; Rosenberg, Danna; Osadchy, Brenda; Calusine, Greg; Das, Rabindra; Melville, Alexander; Yoder, Jonilyn; Yost, Donna-Ruth; Racz, Livia; Oliver, William

    As quantum computing with superconducting qubits advances past the few-qubit stage, implementing 3D packaging/integration to route readout/control lines will become increasingly important. One approach is to bond chips that perform different functions using indium bump bonds. Because indium is malleable, however, achieving the desired spacing and tilt between two chips can be challenging. We present an approach based on etching several microns into the silicon substrate to produce hard stop silicon posts. Since this process involves etching into a pristine substrate, it is essential to evaluate its impact on qubit performance. We report the etched surface's effect on the resonator quality factor and qubit coherence time, as well as the improvement in planarity and tilt. This research was funded in part by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA) and by the Assistant Secretary of Defense for Research & Engineering under Air Force Contract No. FA8721-05-C-0002. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of ODNI, IARPA, or the US Government.

  3. Performance of integrated ΔE-E silicon detector telescope with light charged particles and fission fragments

    International Nuclear Information System (INIS)

    Singh, Arvind; Santra, S.; Topkar, Anita; Mahata, K.; Mukhopadhyay, P.K.; Chatterjee, A.; Pithawa, C.K.; Rath, P.K.; Parihari, A.

    2012-01-01

    Thin ΔE detectors with thickness of a few microns are used for study of nuclear reactions involving heavy charged particles such as fission fragments. Such detectors are difficult to fabricate using conventional silicon etching techniques and are also difficult to handle as they are very fragile. To overcome these problems, a novel detector in which the E and ΔE detectors are integrated on the same silicon chip has been developed. The performance of the first prototype has been presented earlier. In this paper, the performance of the second prototype with light charged particles (measured in 7 Li + 12 C reaction) and fission fragments (measured in 19 F + 209 Bi reaction) has been presented. The results presented in this paper demonstrate that the integrated detector has performance as good as that of a silicon detector telescope which incorporates commercially available physically separate E and ΔE detectors

  4. Electroless porous silicon formation applied to fabrication of boron-silica-glass cantilevers

    DEFF Research Database (Denmark)

    Teva, Jordi; Davis, Zachary James; Hansen, Ole

    2010-01-01

    This work describes the characterization and optimization of anisotropic formation of porous silicon in large volumes (0.5-1 mm3) of silicon by an electroless wet etching technique. The main goal is to use porous silicon as a sacrificial volume for bulk micromachining processes, especially in cas...

  5. III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

    Science.gov (United States)

    Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

    2017-08-04

    The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

  6. Capacitive micromachined ultrasonic transducers for medical imaging and therapy

    Science.gov (United States)

    Khuri-Yakub, Butrus T.; Oralkan, Ömer

    2011-05-01

    Capacitive micromachined ultrasonic transducers (CMUTs) have been subject to extensive research for the last two decades. Although they were initially developed for air-coupled applications, today their main application space is medical imaging and therapy. This paper first presents a brief description of CMUTs, their basic structure and operating principles. Our progression of developing several generations of fabrication processes is discussed with an emphasis on the advantages and disadvantages of each process. Monolithic and hybrid approaches for integrating CMUTs with supporting integrated circuits are surveyed. Several prototype transducer arrays with integrated front-end electronic circuits we developed and their use for 2D and 3D, anatomical and functional imaging, and ablative therapies are described. The presented results prove the CMUT as a micro-electro-mechanical systems technology for many medical diagnostic and therapeutic applications.

  7. Capacitive micromachined ultrasonic transducers for medical imaging and therapy

    International Nuclear Information System (INIS)

    Khuri-Yakub, Butrus T; Oralkan, Ömer

    2011-01-01

    Capacitive micromachined ultrasonic transducers (CMUTs) have been subject to extensive research for the last two decades. Although they were initially developed for air-coupled applications, today their main application space is medical imaging and therapy. This paper first presents a brief description of CMUTs, their basic structure and operating principles. Our progression of developing several generations of fabrication processes is discussed with an emphasis on the advantages and disadvantages of each process. Monolithic and hybrid approaches for integrating CMUTs with supporting integrated circuits are surveyed. Several prototype transducer arrays with integrated front-end electronic circuits we developed and their use for 2D and 3D, anatomical and functional imaging, and ablative therapies are described. The presented results prove the CMUT as a micro-electro-mechanical systems technology for many medical diagnostic and therapeutic applications

  8. A monolithically integrated detector-preamplifier on high-resistivity silicon

    International Nuclear Information System (INIS)

    Holland, S.; Spieler, H.

    1990-02-01

    A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white noise regime. Measurements with an Am 241 radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm 2 detector with on-chip amplifier in an experimental setup with substantial external pickup

  9. Ultra-compact polarization rotation in integrated silicon photonics using digital metamaterials.

    Science.gov (United States)

    Majumder, Apratim; Shen, Bing; Polson, Randy; Menon, Rajesh

    2017-08-21

    Polarization controlling devices such as polarization splitters and rotators are critical elements in integrated-photonic circuits that function via polarization-diversity schemes. Here, we present the design of an ultra-compact nanophotonic-polarization rotator (NPR) that rotates the polarization state from TE to TM with a simulated extinction ratio of 23dB over a coupling length of 5µm and an operating bandwidth of 40nm. This all-silicon device can be fabricated in a single lithography step and we have fabricated and characterized a preliminary device exhibiting 9dB extinction ratio. To emphasize the generality of our methodology, we also designed a NPR that can rotate the polarization state from TM to TE as well. A small device footprint is enabled by the evanescent coupling of guided modes enabled by computationally designed digital metamaterials.

  10. Mechanical and Cooling Design Studies for an Integrated Stave Concept for Silicon Strip Detectors for the Super LHC

    CERN Document Server

    Cepeda, M; Gilchriese, M G D; Haber, C; Miller, W K; Miller, W O; Post, R

    2008-01-01

    Design studies for the mechanical and thermal performance of an integrated stave concept for large-area silicon-strip detector support and cooling are described. The fabrication and test of small-scale prototypes are also presented. Finite-element and other calculations have been completed to develop the design concept and to compare with the measurements on prototypes.

  11. Silicon-Based Integration of Groups III, IV, V Chemical Vapor Depositions in High-Quality Photodiodes

    NARCIS (Netherlands)

    Sammak, A.

    2012-01-01

    Heterogeneous integration of III-V semiconductors with silicon (Si) technology is an interesting approach to utilize the advantages of both high-speed photonic and electronic properties. The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with

  12. A Si/Glass Bulk-Micromachined Cryogenic Heat Exchanger for High Heat Loads: Fabrication, Test, and Application Results.

    Science.gov (United States)

    Zhu, Weibin; White, Michael J; Nellis, Gregory F; Klein, Sanford A; Gianchandani, Yogesh B

    2010-02-01

    This paper reports on a micromachined Si/glass stack recuperative heat exchanger with in situ temperature sensors. Numerous high-conductivity silicon plates with integrated platinum resistance temperature detectors (Pt RTDs) are stacked, alternating with low-conductivity Pyrex spacers. The device has a 1 x 1-cm(2) footprint and a length of up to 3.5 cm. It is intended for use in Joule-Thomson (J-T) coolers and can sustain pressure exceeding 1 MPa. Tests at cold-end inlet temperatures of 237 K-252 K show that the heat exchanger effectiveness is 0.9 with 0.039-g/s helium mass flow rate. The integrated Pt RTDs present a linear response of 0.26%-0.30%/K over an operational range of 205 K-296 K but remain usable at lower temperatures. In self-cooling tests with ethane as the working fluid, a J-T system with the heat exchanger drops 76.1 K below the inlet temperature, achieving 218.7 K for a pressure of 835.8 kPa. The system reaches 200 K in transient state; further cooling is limited by impurities that freeze within the flow stream. In J-T self-cooling tests with an external heat load, the system reaches 239 K while providing 1 W of cooling. In all cases, there is an additional parasitic heat load estimated at 300-500 mW.

  13. The development of micromachined gyroscope structure and circuitry technology.

    Science.gov (United States)

    Xia, Dunzhu; Yu, Cheng; Kong, Lun

    2014-01-14

    This review surveys micromachined gyroscope structure and circuitry technology. The principle of micromachined gyroscopes is first introduced. Then, different kinds of MEMS gyroscope structures, materials and fabrication technologies are illustrated. Micromachined gyroscopes are mainly categorized into micromachined vibrating gyroscopes (MVGs), piezoelectric vibrating gyroscopes (PVGs), surface acoustic wave (SAW) gyroscopes, bulk acoustic wave (BAW) gyroscopes, micromachined electrostatically suspended gyroscopes (MESGs), magnetically suspended gyroscopes (MSGs), micro fiber optic gyroscopes (MFOGs), micro fluid gyroscopes (MFGs), micro atom gyroscopes (MAGs), and special micromachined gyroscopes. Next, the control electronics of micromachined gyroscopes are analyzed. The control circuits are categorized into typical circuitry and special circuitry technologies. The typical circuitry technologies include typical analog circuitry and digital circuitry, while the special circuitry consists of sigma delta, mode matching, temperature/quadrature compensation and novel special technologies. Finally, the characteristics of various typical gyroscopes and their development tendency are discussed and investigated in detail.

  14. The Development of Micromachined Gyroscope Structure and Circuitry Technology

    Directory of Open Access Journals (Sweden)

    Dunzhu Xia

    2014-01-01

    Full Text Available This review surveys micromachined gyroscope structure and circuitry technology. The principle of micromachined gyroscopes is first introduced. Then, different kinds of MEMS gyroscope structures, materials and fabrication technologies are illustrated. Micromachined gyroscopes are mainly categorized into micromachined vibrating gyroscopes (MVGs, piezoelectric vibrating gyroscopes (PVGs, surface acoustic wave (SAW gyroscopes, bulk acoustic wave (BAW gyroscopes, micromachined electrostatically suspended gyroscopes (MESGs, magnetically suspended gyroscopes (MSGs, micro fiber optic gyroscopes (MFOGs, micro fluid gyroscopes (MFGs, micro atom gyroscopes (MAGs, and special micromachined gyroscopes. Next, the control electronics of micromachined gyroscopes are analyzed. The control circuits are categorized into typical circuitry and special circuitry technologies. The typical circuitry technologies include typical analog circuitry and digital circuitry, while the special circuitry consists of sigma delta, mode matching, temperature/quadrature compensation and novel special technologies. Finally, the characteristics of various typical gyroscopes and their development tendency are discussed and investigated in detail.

  15. Simulation and optimization of a micromachined gyroscope using high-aspect-ratio micromachining fabrication process

    Science.gov (United States)

    Ruan, Aiwu Y.; Tse, Man S.; Chong, Gang Y.

    2001-11-01

    Micromachined gyroscopes rely on tuned vibration mode frequencies to measure rotation rates and typically have complex modes of vibration for the mechanical microstructures. Although there are many reports on how to exactly tune the drive and sense modes of vibration to maximize sensitivity of micromachined gyroscope, there are only few reports on the detailed analysis of modes of vibration. Modes of vibration are strongly dependent on the design parameters of the mechanical structure of the gyroscope including the dimension of the proof mass, types and dimensions of the suspension, and residual mechanical stress of the high aspect-ratio polysilicon film used to form the microstructures of the micromachined gyroscope. In this paper, an electrostatic drive and capacitive sense in-plane decoupled gyroscope for measuring vertical angular velocity is proposed to study the effects of the geometrical variables on modes of vibration. Finite-element analysis (FEA) simulation was performed on simplifiedmodel of the in-plane decoupled micromachined gyroscope microstructure. For optimal result the drive-mode and sense-mode suspensions of the micromachined gyroscope should be fabricated from thick polysilicon microstructure to give large aspect ratio suspension systems for the in-plane decoupled micromachined gyroscope. Folded-beam suspension design is recommended for the drive-mode suspension in order to relieve the residual stress of the thick polysilicon film for high aspect-ratio micromachine dgyroscope. It is critical to control the process variations of the suspension beam dimension, especially the beam width variation in order to achieve the goal of accurately control resonant frequencies of micromachined gyrocope.

  16. Joining and Integration of Silicon Carbide-Based Materials for High Temperature Applications

    Science.gov (United States)

    Halbig, Michael C.; Singh, Mrityunjay

    2016-01-01

    Advanced joining and integration technologies of silicon carbide-based ceramics and ceramic matrix composites are enabling for their implementation into wide scale aerospace and ground-based applications. The robust joining and integration technologies allow for large and complex shapes to be fabricated and integrated with the larger system. Potential aerospace applications include lean-direct fuel injectors, thermal actuators, turbine vanes, blades, shrouds, combustor liners and other hot section components. Ground based applications include components for energy and environmental systems. Performance requirements and processing challenges are identified for the successful implementation different joining technologies. An overview will be provided of several joining approaches which have been developed for high temperature applications. In addition, various characterization approaches were pursued to provide an understanding of the processing-microstructure-property relationships. Microstructural analysis of the joint interfaces was conducted using optical, scanning electron, and transmission electron microscopy to identify phases and evaluate the bond quality. Mechanical testing results will be presented along with the need for new standardized test methods. The critical need for tailoring interlayer compositions for optimum joint properties will also be highlighted.

  17. A Micromachined Infrared Senor for an Infrared Focal Plane Array

    Directory of Open Access Journals (Sweden)

    Seong M. Cho

    2008-04-01

    Full Text Available A micromachined infrared sensor for an infrared focal plane array has been designed and fabricated. Amorphous silicon was used as a sensing material, and silicon nitride was used as a membrane material. To get a good absorption in infrared range, the sensor structure was designed as a l/4 cavity structure. A Ni-Cr film was selected as an electrode material and mixed etching scheme was applied in the patterning process of the Ni-Cr electrode. All the processes were made in 0.5 μm iMEMS fabricated in the Electronics and Telecommunication Research Institute (ETRI. The processed MEMS sensor had a small membrane deflection less than 0.15 μm. This small deflection can be attributed to the rigorous balancing of the stresses of individual layers. The efficiency of infrared absorption was more than 75% in the wavelength range of 8 ~ 14 μm. The processed infrared sensor showed high responsivity of ~230 kV/W at 1.0V bias and 2 Hz operation condition. The time constant of the sensor was 8.6 msec, which means that the sensor is suitable to be operated in 30 Hz frame rate.

  18. Acoustical imaging using capacitive micromachined ultrasonic transducer arrays: Devices, circuits, and systems

    Science.gov (United States)

    Oralkan, Omer

    Integrated circuit technologies have had a great impact on the development of medical devices. Diagnostic imaging systems have benefited tremendously from the improvements in integrated circuits. One of the recent examples of this interaction between the two disciplines occurred in the area of ultrasonic imaging. The ability to build structures with dimensions in the submicron range enabled the realization of an almost a century old idea: Capacitive ultrasonic transducers. The major advantages of this transducer technology are ease of fabrication, potential for integration with supporting electronic circuits and improved bandwidth and sensitivity. This dissertation analyzes the viability of capacitive micromachined ultrasonic transducers (CMUTs) for practical imaging applications. This analysis is conducted by a detailed characterization effort, and by demonstrating both 2-D and 3-D images. Acoustical performance of 1-D and 2-D CMUT arrays fabricated using silicon integrated circuit technology has been experimentally characterized for transmit and receive modes, and the results are found to be in good agreement with the theoretical expectations. Both 2-D and 3-D images have been demonstrated. The distinctive features of CMUTs manifest themselves in the results of the characterization experiments and also in the resulting images. This dissertation also describes a general approach to design integrated front-end circuits for ultrasonic imaging and demonstrates basic circuit blocks for use in integrated systems along with CMUT arrays. The integration of the ultrasonic transducer arrays with supporting electronics not only reduces the cost and complexity of the system but also provides several advantages such as reduced parasitics, improved sensitivity, and a compact design with a reduced number of external interconnects. In this study, a custom integrated circuit comprising a pulse driver, a transmit/receive (T/R) switch and a wideband preamplifier has been fabricated

  19. Micromachined Fabry-Perot Interferometer for Motion Detection

    National Research Council Canada - National Science Library

    Waters, Richard L; Aklufi, Monti E

    2002-01-01

    The monolithic integration of a Fabry-Perot interferometer and a (100) silicon photodiode is reported for use as a highly sensitive transduction method in the detection of minute displacements of a proof mass attached to a spring...

  20. Structural Integrity of Flat Silicon Panels for Nanosatellites : Modeling and Testing

    OpenAIRE

    Nguyen, Hugo; Thorslund, Robert; Thornell, Greger; Köhler, Johan; Stenmark, Lars

    2006-01-01

    To utilize the high mass fraction of silicon material in a nanosatellite based on micro-electro-mechanical systems, part of the structural function has been assigned to the flat silicon stacks embracing these systems. Three modules for destructive testing in bending, warping and shearing cases were built with 68x68x1 mm silicon stacks bonded in aluminium frames by in-situ casting of silicone rubber. The rubber served as the deformation zone between the stiff and brittle silicon stacks and the...

  1. Fabrication of Vacuum-Sealed Capacitive Micromachined Ultrasonic Transducer Arrays Using Glass Reflow Process

    Directory of Open Access Journals (Sweden)

    Nguyen Van Toan

    2016-04-01

    Full Text Available This paper presents a process for the fabrication of vacuum-sealed capacitive micromachined ultrasonic transducer (CMUT arrays using glass reflow and anodic bonding techniques. Silicon through-wafer interconnects have been investigated by the glass reflow process. Then, the patterned silicon-glass reflow wafer is anodically bonded to an SOI (silicon-on-insulator wafer for the fabrication of CMUT devices. The CMUT 5 × 5 array has been successfully fabricated. The resonant frequency of the CMUT array with a one-cell radius of 100 µm and sensing gap of 3.2 µm (distance between top and bottom electrodes is observed at 2.84 MHz. The Q factor is approximately 1300 at pressure of 0.01 Pa.

  2. Hybrid micromachining using a nanosecond pulsed laser and micro EDM

    International Nuclear Information System (INIS)

    Kim, Sanha; Chung, Do Kwan; Shin, Hong Shik; Chu, Chong Nam; Kim, Bo Hyun

    2010-01-01

    Micro electrical discharge machining (micro EDM) is a well-known precise machining process that achieves micro structures of excellent quality for any conductive material. However, the slow machining speed and high tool wear are main drawbacks of this process. Though the use of deionized water instead of kerosene as a dielectric fluid can reduce the tool wear and increase the machine speed, the material removal rate (MRR) is still low. In contrast, laser ablation using a nanosecond pulsed laser is a fast and non-wear machining process but achieves micro figures of rather low quality. Therefore, the integration of these two processes can overcome the respective disadvantages. This paper reports a hybrid process of a nanosecond pulsed laser and micro EDM for micromachining. A novel hybrid micromachining system that combines the two discrete machining processes is introduced. Then, the feasibility and characteristics of the hybrid machining process are investigated compared to conventional EDM and laser ablation. It is verified experimentally that the machining time can be effectively reduced in both EDM drilling and milling by rapid laser pre-machining prior to micro EDM. Finally, some examples of complicated 3D micro structures fabricated by the hybrid process are shown

  3. Adjustable optical response of amorphous silicon nanowires integrated with thin films.

    Science.gov (United States)

    Dhindsa, Navneet; Walia, Jaspreet; Pathirane, Minoli; Khodadad, Iman; Wong, William S; Saini, Simarjeet Singh

    2016-04-08

    We experimentally demonstrate a new optical platform by integrating hydrogenated amorphous silicon nanowire arrays with thin films deposited on transparent substrates like glass. A 535 nm thick thin film is anisotropically etched to fabricate vertical nanowire arrays of 100 nm diameter arranged in a square lattice. Adjusting the nanowire length, and consequently the thin film thickness permits the optical properties of this configuration to be tuned for either transmission filter response or enhanced broadband absorption. Vivid structural colors are also achieved in reflection and transmission. The optical properties of the platform are investigated for three different etch depths. Transmission filter response is achieved for a configuration with nanowires on glass without any thin film. Alternatively, integrating thin film with nanowires increases the absorption efficiency by ∼97% compared to the thin film starting layer and by ∼78% over nanowires on glass. The ability to tune the optical response of this material in this fashion makes it a promising platform for high performance photovoltaics, photodetectors and sensors.

  4. An integrated nonlinear optical loop mirror in silicon photonics for all-optical signal processing

    Directory of Open Access Journals (Sweden)

    Zifei Wang

    2018-02-01

    Full Text Available The nonlinear optical loop mirror (NOLM has been studied for several decades and has attracted considerable attention for applications in high data rate optical communications and all-optical signal processing. The majority of NOLM research has focused on silica fiber-based implementations. While various fiber designs have been considered to increase the nonlinearity and manage dispersion, several meters to hundreds of meters of fiber are still required. On the other hand, there is increasing interest in developing photonic integrated circuits for realizing signal processing functions. In this paper, we realize the first-ever passive integrated NOLM in silicon photonics and demonstrate its application for all-optical signal processing. In particular, we show wavelength conversion of 10 Gb/s return-to-zero on-off keying (RZ-OOK signals over a wavelength range of 30 nm with error-free operation and a power penalty of less than 2.5 dB, we achieve error-free nonreturn to zero (NRZ-to-RZ modulation format conversion at 10 Gb/s also with a power penalty of less than 2.8 dB, and we obtain error-free all-optical time-division demultiplexing of a 40 Gb/s RZ-OOK data signal into its 10 Gb/s tributary channels with a maximum power penalty of 3.5 dB.

  5. Integrated USB based readout interface for silicon strip detectors of the ATLAS SCT module

    Science.gov (United States)

    Masek, P.; Linhart, V.; Granja, C.; Pospisil, S.; Husak, M.

    2011-12-01

    An integrated portable USB based readout interface for the ATLAS semiconductor trackers (SCT) has been built. The ATLAS SCT modules are large area silicon strip detectors designed for tracking of high-energy charged particles resulting in collisions on Large Hadron Collider (LHC) in CERN. These modules can be also used on small accelerators for medical or industry applications where a compact and configurable readout interface would be useful. A complete custom made PC-host software tool was written for Windows platform for control and DAQ with build-in online visualization. The new constructed interface provides integrated power, control and DAQ and configurable communication between the detector module and the controlling PC. The interface is based on the Field Programmable Gate Array (FPGA) and the high speed USB 2.0 standard. This design permits to operate the modules under high particle fluence while minimizing the dead time of the whole detection system. Utilization of the programmable device simplifies the operation and permits future expansion of the functionality without any hardware changes. The device includes the high voltage source for detector bias up to 500 V and it is equipped with number of devices for monitoring the operation and conditions of measurement (temperature, humidity, voltage). These features are particularly useful as the strip detector must be operated in a well controlled environment. The operation of the interface will be demonstrated on data measured with different particles from radiation sources.

  6. Quantum Coherent States and Path Integral Method to Stochastically Determine the Anisotropic Volume Expansion in Lithiated Silicon Nanowires

    Directory of Open Access Journals (Sweden)

    Donald C. Boone

    2017-10-01

    Full Text Available This computational research study will analyze the multi-physics of lithium ion insertion into a silicon nanowire in an attempt to explain the electrochemical kinetics at the nanoscale and quantum level. The electron coherent states and a quantum field version of photon density waves will be the joining theories that will explain the electron-photon interaction within the lithium-silicon lattice structure. These two quantum particles will be responsible for the photon absorption rate of silicon atoms that are hypothesized to be the leading cause of breaking diatomic silicon covalent bonds that ultimately leads to volume expansion. It will be demonstrated through the combination of Maxwell stress tensor, optical amplification and path integrals that a stochastic analyze using a variety of Poisson distributions that the anisotropic expansion rates in the <110>, <111> and <112> orthogonal directions confirms the findings ascertained in previous works made by other research groups. The computational findings presented in this work are similar to those which were discovered experimentally using transmission electron microscopy (TEM and simulation models that used density functional theory (DFT and molecular dynamics (MD. The refractive index and electric susceptibility parameters of lithiated silicon are interwoven in the first principle theoretical equations and appears frequently throughout this research presentation, which should serve to demonstrate the importance of these parameters in the understanding of this component in lithium ion batteries.

  7. Experimental Analysis of Bisbenzocyclobutene Bonded Capacitive Micromachined Ultrasonic Transducers.

    Science.gov (United States)

    Manwar, Rayyan; Chowdhury, Sazzadur

    2016-06-24

    Experimental measurement results of a 1.75 mm × 1.75 mm footprint area Capacitive Micromachined Ultrasonic Transducer (CMUT) planar array fabricated using a bisbenzocyclobutene (BCB)-based adhesive wafer bonding technique has been presented. The array consists of 40 × 40 square diaphragm CMUT cells with a cavity thickness of 900 nm and supported by 10 µm wide dielectric spacers patterned on a thin layer of BCB. A 150 µm wide one µm thick gold strip has been used as the contact pad for gold wire bonding. The measured resonant frequency of 19.3 MHz using a Polytec™ laser Doppler vibrometer (Polytec™ MSA-500) is in excellent agreement with the 3-D FEA simulation result using IntelliSuite™. An Agilent ENA5061B vector network analyzer (VNA) has been used for impedance measurement and the resonance and anti-resonance values from the imaginary impedance curve were used to determine the electromechanical coupling co-efficient. The measured coupling coefficient of 0.294 at 20 V DC bias exhibits 40% higher transduction efficiency as compared to a measured value published elsewhere for a silicon nitride based CMUT. A white light interferometry method was used to measure the diaphragm deflection profiles at different DC bias. The diaphragm center velocity was measured for different sub-resonant frequencies using a Polytec™ laser Doppler vibrometer that confirms vibration of the diaphragm at different excitation frequencies and bias voltages. Transmit and receive operations of CMUT cells were characterized using a pitch-catch method and a -6 dB fractional bandwidth of 23% was extracted from the received signal in frequency domain. From the measurement, it appears that BCB-based CMUTs offer superior transduction efficiency as compared to silicon nitride or silicon dioxide insulator-based CMUTs, and provide a very uniform deflection profile thus making them a suitable candidate to fabricate highly energy efficient CMUTs.

  8. Femtosecond laser micromachining of polylactic acid/graphene composites for designing interdigitated microelectrodes for sensor applications

    Science.gov (United States)

    Paula, Kelly T.; Gaál, Gabriel; Almeida, G. F. B.; Andrade, M. B.; Facure, Murilo H. M.; Correa, Daniel S.; Riul, Antonio; Rodrigues, Varlei; Mendonça, Cleber R.

    2018-05-01

    There is an increasing interest in the last years towards electronic applications of graphene-based materials and devices fabricated from patterning techniques, with the ultimate goal of high performance and temporal resolution. Laser micromachining using femtosecond pulses is an attractive methodology to integrate graphene-based materials into functional devices as it allows changes to the focal volume with a submicrometer spatial resolution due to the efficient nonlinear nature of the absorption, yielding rapid prototyping for innovative applications. We present here the patterning of PLA-graphene films spin-coated on a glass substrate using a fs-laser at moderate pulse energies to fabricate interdigitated electrodes having a minimum spatial resolution of 5 μm. Raman spectroscopy of the PLA-graphene films indicated the presence of multilayered graphene fibers. Subsequently, the PLA-graphene films were micromachined using a femtosecond laser oscillator delivering 50-fs pulses and 800 nm, where the pulse energy and scanning speed was varied in order to determine the optimum irradiation parameters (16 nJ and 100 μm/s) to the fabrication of microstructures. The micromachined patterns were characterized by optical microscopy and submitted to electrical measurements in liquid samples, clearly distinguishing all tastes tested. Our results confirm the femtosecond laser micromachining technique as an interesting approach to efficiently pattern PLA-graphene filaments with high precision and minimal mechanical defects, allowing the easy fabrication of interdigitated structures and an alternative method to those produced by conventional photolithography.

  9. Molecular-Scale Lubricants for Micromachine Applications: Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Burns, A.R.; Dugger, M.T.; Houston, J.E.; Lopez, G.P.; Mayer, T.M.; Michalske, T.A.; Miller, S.L.; Sniegowski, J.J.; Stevens, M.J.; Zhou, Y.

    1998-12-01

    The nature of this work was to develop the physics and chemistry base for understanding molecular-scale lubricants used to reduce of friction- and adhesion-induced failure in silicon micromachines (MEMS). We acquired this new knowledge by tailoring the molecular properties of the lubricants, applying local probes that can directly monitor the response of lubricants in contact conditions, and evaluating the performance of model lubricants MEMS devices. Model lubricants under investigation were the silane coupling agents that form monolayer films on native oxide silicon surfaces, which is the substrate in MEMS. These molecules bind via strong surface bonds and produce a layer of hydro- or fluoro-carbon chains normal to the substrate. "Tailoring" the lubricants entails modifying the chain length, the chain chemical reactivity (H or F), and the density of chain structures. Thus much effort went into understanding the surface chemistry of silane-silicon oxide coupling. With proximal probes such as atomic force microscopy (AFM), interracial force microscopy (FM), and shear force microscopy in combination with IFM, we examined the frictional and adhesive properties of the silane films with very high spatial resolution (< 100 nm) and sensitivity. MEMS structures are treated with silanes under identical conditions, and examined for friction and adhesion under operating conditions. Proper assessment of the lubricants required quantitative analysis of MEMS performance at high speeds and long operating times. Our proximal probe measurements and WS performance analyses form a very important link for future molecular dynamics simulations, that, in turn, should be able to predict MEMS performance under all conditions.

  10. Development and miniaturization of a photoacoustic silicon integrated spectrometer for trace gas analysis; Etude et developpement d`un spectrometre photoacoustique integre sur silicium pour analyse de gaz

    Energy Technology Data Exchange (ETDEWEB)

    Jourdain, A.

    1998-10-29

    The study deals with the integration on silicon wafers of an infrared spectrometer for carbon dioxide measurements. Photoacoustic detection that measures a differential pressure in a cavity turns out to be the best spectroscopic technique for miniaturization and integration. The micro-system is composed of two main components: an infrared light source on a silicon nitride membrane and a component integrating a tunable optical filter, a microphone for detection and a micro-cavity. After a theoretical study of the different components, each element is realized with the microelectronic techniques such as photolithography, thin films deposits and dry and wet etching. A resin sealing of all the different elements realizes the final micro-spectrophotometer. A characterization of the components is done thanks to the realization of an electronic specific set-up. (author) 107 refs.

  11. A thermal-driven silicon micro xy-stage integrated with piezoresistive sensors for nano-positioning

    International Nuclear Information System (INIS)

    Choi, Young-Soo; Zhang, Yan; Lee, Dong-Weon

    2012-01-01

    This paper describes a novel micro xy-stage, driven by double-hot arm horizontal thermal micro-actuators integrated with a piezoresistive sensor (PS) for low-voltage operation and precise control. This micro xy-stage structure is linked with chevron beams and optimized to amplify the displacement generated by the micro-actuators that provide a pull force to the movable platform. The PS employed for in situ displacement detection and feedback control is fabricated at the base of a cold arm, which minimizes the influence of temperature change induced by electro-thermal heating. The micro xy-stage structure is defined through the use of a simple micromachining process, released by backside wet etching with a special tool. For an input power of approximately 44 mW, each chevron actuator provides about 16 µm and the total displacement of the platform is close to 32 µm. The sensitivity of the PS is better than 1 mV µm −1 , obtained from the amplified voltage output of the Wheatstone bridge circuit. The potential applications of the proposed micro xy-stage lie in micro- or nano-manipulation, as well as the positioning of ultra-small objects in nanotechnology. (paper)

  12. A 12-bit SAR ADC integrated on a multichannel silicon drift detector readout IC

    International Nuclear Information System (INIS)

    Schembari, F.; Bellotti, G.; Fiorini, C.

    2016-01-01

    A 12-bit analog-to-digital converter (ADC) addressed to Silicon-Drift Detectors (SDDs) multichannel readout ASICs for X- and gamma-ray applications is presented. Aiming at digitizing output multiplexed data from the upstream analog filters banks, the converter must ensure 11-bit accuracy and a sampling frequency of about 5 MS/s. The ADC architecture is the charge-redistribution (CR) successive-approximation register (SAR). A fully differential topology has also been chosen for better rejection of common-mode noise and disturbances. The internal DAC is made of binary-scaled capacitors, whose bottom plates are switched by the SAR logic to perform the binary search of the analog input value by means of the monotonic switching scheme. The A/D converter is integrated on SFERA, a multichannel ASIC fabricated in a standard CMOS 0.35 μm 3.3 V technology and it occupies an area of 0.42 mm 2 . Simulated static performance shows monotonicity over the whole input–output characteristic. The description of the circuit topology and of inner blocks architectures together with the experimental characterization is here presented. - Highlights: • X- and γ-ray spectroscopy front-ends need to readout a high number of detectors. • Design efforts are increasingly oriented to compact and low-power ASICs. • A possible solution is the on-chip integration of the analog-to-digital converter. • A 12-bit CR successive-approximation-register ADC has been developed. • It is a suitable candidate as the digitizer to be integrated in multichannel ASICs

  13. Silicon-Nitride-based Integrated Optofluidic Biochemical Sensors using a Coupled-Resonator Optical Waveguide

    Directory of Open Access Journals (Sweden)

    Jiawei eWANG

    2015-04-01

    Full Text Available Silicon nitride (SiN is a promising material platform for integrating photonic components and microfluidic channels on a chip for label-free, optical biochemical sensing applications in the visible to near-infrared wavelengths. The chip-scale SiN-based optofluidic sensors can be compact due to a relatively high refractive index contrast between SiN and the fluidic medium, and low-cost due to the complementary metal-oxide-semiconductor (CMOS-compatible fabrication process. Here, we demonstrate SiN-based integrated optofluidic biochemical sensors using a coupled-resonator optical waveguide (CROW in the visible wavelengths. The working principle is based on imaging in the far field the out-of-plane elastic-light-scattering patterns of the CROW sensor at a fixed probe wavelength. We correlate the imaged pattern with reference patterns at the CROW eigenstates. Our sensing algorithm maps the correlation coefficients of the imaged pattern with a library of calibrated correlation coefficients to extract a minute change in the cladding refractive index. Given a calibrated CROW, our sensing mechanism in the spatial domain only requires a fixed-wavelength laser in the visible wavelengths as a light source, with the probe wavelength located within the CROW transmission band, and a silicon digital charge-coupled device (CCD / CMOS camera for recording the light scattering patterns. This is in sharp contrast with the conventional optical microcavity-based sensing methods that impose a strict requirement of spectral alignment with a high-quality cavity resonance using a wavelength-tunable laser. Our experimental results using a SiN CROW sensor with eight coupled microrings in the 680nm wavelength reveal a cladding refractive index change of ~1.3 × 10^-4 refractive index unit (RIU, with an average sensitivity of ~281 ± 271 RIU-1 and a noise-equivalent detection limit (NEDL of 1.8 ×10^-8 RIU ~ 1.0 ×10^-4 RIU across the CROW bandwidth of ~1 nm.

  14. Polymer-embedded colloidal lead-sulfide nanocrystals integrated to vertically slotted silicon-based ring resonators for telecom applications

    Science.gov (United States)

    Humer, Markus; Guider, Romain; Hackl, Florian; Fromherz, Thomas

    2013-01-01

    The main drawback of the rapidly evolving field of silicon photonics lies in the absence of efficient monolithically integrated radiation sources as a consequence of the indirect bandgap of Si and Ge. Relevant alternatives based on the hybrid combination of Si with optically active materials have to be technologically simple, temporally stable, and provide efficient coupling to the Si waveguides. Lead-sulfide nanocrystals (NCs) were blended into a polymer resist suitable for deep-UV- and electron-beam lithography and integrated into Si-based vertically slotted waveguides and ring resonators. The polymer both stabilizes the NC's photoluminescence emission against degradation under ambient conditions and allows lithographic patterning of this compound material. After integration into the optoelectronic structures and upon optical pumping, intense photoluminescence emission from ring resonators was recorded at the output of bus-waveguides. The resonator quality factors were investigated for polymer-NC compounds with NC concentrations in the range between 0.1 and 8 vol%. The spontaneous emission rate enhancement for vertically slotted resonators was estimated to be a factor of two higher as compared to unslotted ones. The stable integration of colloidal NCs as well as the improved light coupling to silicon circuits is an important step in the development of silicon-based hybrid photonics.

  15. Clean graphene interfaces by selective dry transfer for large area silicon integration

    Science.gov (United States)

    Na, S. R.; Rahimi, S.; Tao, L.; Chou, H.; Ameri, S. K.; Akinwande, D.; Liechti, K. M.

    2016-03-01

    Here we present a very fast, selective mechanical approach for transferring graphene with low levels of copper contamination from seed wafers on which it was grown to target wafers for very large scale integration (VLSI) electronics. We found that graphene/copper or copper/silicon oxide delamination paths could be selected by slow and faster separation rates, respectively. Thus graphene can be transferred to a target wafer, either exposed or protected by the seed copper layer, which can later be removed by etching. Delamination paths were identified by SEM and Raman spectroscopy. The sheet resistance of the graphene produced by the two approaches was slightly higher than graphene transferred by a PMMA wet-transfer process, indicating reduced impurity doping, and the variation in the sheet resistance values was much lower. Copper contamination levels, quantitatively established by TOF-SIMS, were several orders of magnitude lower than the values for PMMA assisted transfer. In addition, we demonstrated that top-gated transistor devices from our mechanical, delamination transferred graphene exhibited superior transistor behavior to PMMA-assisted wet transfer graphene. The adhesion energy, strength and range of the interactions were quantitatively determined by nonlinear fracture analyses, and suggest that the roughness of the interface between graphene and copper plays an important role with implications for improvements in manufacturing processes.Here we present a very fast, selective mechanical approach for transferring graphene with low levels of copper contamination from seed wafers on which it was grown to target wafers for very large scale integration (VLSI) electronics. We found that graphene/copper or copper/silicon oxide delamination paths could be selected by slow and faster separation rates, respectively. Thus graphene can be transferred to a target wafer, either exposed or protected by the seed copper layer, which can later be removed by etching

  16. Model Design of Piezoelectric Micromachined Modal Gyroscope

    Directory of Open Access Journals (Sweden)

    Xiaojun Hu

    2011-01-01

    Full Text Available This paper reports a novel kind of solid-state microgyroscope, which is called piezoelectric micromachined modal gyroscope (PMMG. PMMG has large stiffness and robust resistance to shake and strike because there is no evident mass-spring component in its structure. This work focused on quantitative optimization of the gyroscope, which is still blank for such gyroscope. The modal analysis by the finite element method (FEM was firstly conducted. A set of quantitative indicators were developed to optimize the operation mode. By FEM, the harmonic analysis was conducted to find the way to efficiently actuate the operational mode needed. The optimal configuration of driving electrodes was obtained. At last, the Coriolis analysis was conducted to show the relation between angular velocity and differential output voltage by the Coriolis force under working condition. The results obtained in this paper provide theoretical basis for realizing this novel kind of micromachined gyroscope.

  17. Study and characterization of an integrated circuit-deposited hydrogenated amorphous silicon sensor for the detection of particles and radiations

    International Nuclear Information System (INIS)

    Despeisse, M.

    2006-03-01

    Next generation experiments at the European laboratory of particle physics (CERN) require particle detector alternatives to actual silicon detectors. This thesis presents a novel detector technology, which is based on the deposition of a hydrogenated amorphous silicon sensor on top of an integrated circuit. Performance and limitations of this technology have been assessed for the first time in this thesis in the context of particle detectors. Specific integrated circuits have been designed and the detector segmentation, the interface sensor-chip and the sensor leakage current have been studied in details. The signal induced by the track of an ionizing particle in the sensor has been characterized and results on the signal speed, amplitude and on the sensor resistance to radiation are presented. The results are promising regarding the use of this novel technology for radiation detection, though limitations have been shown for particle physics application. (author)

  18. Temperature and color management of silicon solar cells for building integrated photovoltaic

    Directory of Open Access Journals (Sweden)

    Amara Mohamed

    2018-01-01

    Full Text Available Color management of integrated photovoltaics must meet two criteria of performance: provide maximum conversion efficiency and allow getting the chosen colors with an appropriate brightness, more particularly when using side by side solar cells of different colors. As the cooling conditions are not necessarily optimal, we need to take into account the influence of the heat transfer and temperature. In this article, we focus on the color space and brightness achieved by varying the antireflective properties of flat silicon solar cells. We demonstrate that taking into account the thermal effects allows freely choosing the color and adapting the brightness with a small impact on the conversion efficiency, except for dark blue solar cells. This behavior is especially true when heat exchange by convection is low. Our optical simulations show that the perceived color, for single layer ARC, is not varying with the position of the observer, whatever the chosen color. The use of a double layer ARC adds flexibility to tune the wanted color since the color space is greatly increased in the green and yellow directions. Last, choosing the accurate material allows both bright colors and high conversion efficiency at the same time.

  19. Metamaterial CRLH Antennas on Silicon Substrate for Millimeter-Wave Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Gheorghe Ioan Sajin

    2012-01-01

    Full Text Available The paper presents two composite right/left-handed (CRLH coplanar waveguide (CPW zeroth-order resonant (ZOR antennas which were designed, processed, and electrically characterized for applications in the millimetric wave frequency range. Two CRLH antennas were developed for f=27 GHz and f=38.5, GHz, respectively. The CRLH antenna on f=27 GHz shows a return loss of RL<−18.78 dB at f=26.88 GHz. The −3 dB radiation characteristic beamwidth was approximately 37° and the gain was Gi=2.82 dBi. The CRLH antenna on f=38.5 GHz has a return loss of RL<−38.5 dB at f=38.82 GHz and the −3 dB radiation characteristic beamwidth of approximately 17°. The gains were Gi=1.08 dBi at f=38 GHz and Gi=1.2 dBi at f=38.6 GHz. The maximum measured gain was Gi=1.75 dBi at f=38.2 GHz. It is, upon the authors' knowledge, the first report of millimeter wave CRLH antennas on silicon substrate in CPW technique for use in mm-wave monolithic integrated circuit.

  20. Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

    Directory of Open Access Journals (Sweden)

    Philip G. Neudeck

    2016-12-01

    Full Text Available The prolonged operation of semiconductor integrated circuits (ICs needed for long-duration exploration of the surface of Venus has proven insurmountably challenging to date due to the ∼ 460 °C, ∼ 9.4 MPa caustic environment. Past and planned Venus landers have been limited to a few hours of surface operation, even when IC electronics needed for basic lander operation are protected with heavily cumbersome pressure vessels and cooling measures. Here we demonstrate vastly longer (weeks electrical operation of two silicon carbide (4H-SiC junction field effect transistor (JFET ring oscillator ICs tested with chips directly exposed (no cooling and no protective chip packaging to a high-fidelity physical and chemical reproduction of Venus’ surface atmosphere. This represents more than 100-fold extension of demonstrated Venus environment electronics durability. With further technology maturation, such SiC IC electronics could drastically improve Venus lander designs and mission concepts, fundamentally enabling long-duration enhanced missions to the surface of Venus.

  1. Monolithic Mid-Infrared Integrated Photonics Using Silicon-on-Epitaxial Barium Titanate Thin Films.

    Science.gov (United States)

    Jin, Tiening; Li, Leigang; Zhang, Bruce; Lin, Hao-Yu Greg; Wang, Haiyan; Lin, Pao Tai

    2017-07-05

    Broadband mid-infrared (mid-IR) photonic circuits that integrate silicon waveguides and epitaxial barium titanate (BTO) thin films are demonstrated using the complementary metal-oxide-semiconductor process. The epitaxial BTO thin films are grown on lanthanum aluminate (LAO) substrates by the pulsed laser deposition technique, wherein a broad infrared transmittance between λ = 2.5 and 7 μm is observed. The optical waveguiding direction is defined by the high-refractive-index amorphous Si (a-Si) ridge structure developed on the BTO layer. Our waveguides show a sharp fundamental mode over the broad mid-IR spectrum, whereas its optical field distribution between the a-Si and BTO layers can be modified by varying the height of the a-Si ridge. With the advantages of broad mid-IR transparency and the intrinsic electro-optic properties, our monolithic Si on a ferroelectric BTO platform will enable tunable mid-IR microphotonics that are desired for high-speed optical logic gates and chip-scale biochemical sensors.

  2. Temperature and color management of silicon solar cells for building integrated photovoltaic

    Science.gov (United States)

    Amara, Mohamed; Mandorlo, Fabien; Couderc, Romain; Gerenton, Félix; Lemiti, Mustapha

    2018-01-01

    Color management of integrated photovoltaics must meet two criteria of performance: provide maximum conversion efficiency and allow getting the chosen colors with an appropriate brightness, more particularly when using side by side solar cells of different colors. As the cooling conditions are not necessarily optimal, we need to take into account the influence of the heat transfer and temperature. In this article, we focus on the color space and brightness achieved by varying the antireflective properties of flat silicon solar cells. We demonstrate that taking into account the thermal effects allows freely choosing the color and adapting the brightness with a small impact on the conversion efficiency, except for dark blue solar cells. This behavior is especially true when heat exchange by convection is low. Our optical simulations show that the perceived color, for single layer ARC, is not varying with the position of the observer, whatever the chosen color. The use of a double layer ARC adds flexibility to tune the wanted color since the color space is greatly increased in the green and yellow directions. Last, choosing the accurate material allows both bright colors and high conversion efficiency at the same time.

  3. Integrating printed microfluidics with silicon photomultipliers for miniaturised and highly sensitive ATP bioluminescence detection.

    Science.gov (United States)

    Santangelo, M F; Libertino, S; Turner, A P F; Filippini, D; Mak, W C

    2018-01-15

    Bioluminescence has been widely used for important biosensing applications such as the measurement of adenosine triphosphate (ATP), the energy unit in biological systems and an indicator of vital processes. The current technology for detection is mainly based on large equipment such as readers and imaging systems, which require intensive and time-consuming procedures. A miniaturised bioluminescence sensing system, which would allow sensitive and continuous monitoring of ATP, with an integrated and low-cost disposable microfluidic chamber for handling of biological samples, is highly desirable. Here, we report the design, fabrication and testing of 3D printed microfluidics chips coupled with silicon photomultipliers (SiPMs) for high sensitive real-time ATP detection. The 3D microfluidic chip reduces reactant consumption and facilitates solution delivery close to the SiPM to increase the detection efficiency. Our system detects ATP with a limit of detection (LoD) of 8nM and an analytical dynamic range between 15nM and 1µM, showing a stability error of 3%, and a reproducibility error below of 20%. We demonstrate the dynamic monitoring of ATP in a continuous-flow system exhibiting a fast response time, ~4s, and a full recovery to the baseline level within 17s. Moreover, the SiPM-based bioluminescence sensing system shows a similar analytical dynamic range for ATP detection to that of a full-size PerkinElmer laboratory luminescence reader. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. A 12-bit SAR ADC integrated on a multichannel silicon drift detector readout IC

    Science.gov (United States)

    Schembari, F.; Bellotti, G.; Fiorini, C.

    2016-07-01

    A 12-bit analog-to-digital converter (ADC) addressed to Silicon-Drift Detectors (SDDs) multichannel readout ASICs for X- and gamma-ray applications is presented. Aiming at digitizing output multiplexed data from the upstream analog filters banks, the converter must ensure 11-bit accuracy and a sampling frequency of about 5 MS/s. The ADC architecture is the charge-redistribution (CR) successive-approximation register (SAR). A fully differential topology has also been chosen for better rejection of common-mode noise and disturbances. The internal DAC is made of binary-scaled capacitors, whose bottom plates are switched by the SAR logic to perform the binary search of the analog input value by means of the monotonic switching scheme. The A/D converter is integrated on SFERA, a multichannel ASIC fabricated in a standard CMOS 0.35 μm 3.3 V technology and it occupies an area of 0.42 mm2. Simulated static performance shows monotonicity over the whole input-output characteristic. The description of the circuit topology and of inner blocks architectures together with the experimental characterization is here presented.

  5. Joining and Integration of Silicon Nitride Ceramics for Aerospace and Energy Systems

    Science.gov (United States)

    Singh, M.; Asthana, R.

    2009-01-01

    Light-weight, creep-resistant silicon nitride ceramics possess excellent high-temperature strength and are projected to significantly raise engine efficiency and performance when used as turbine components in the next-generation turbo-shaft engines without the extensive cooling that is needed for metallic parts. One key aspect of Si3N4 utilization in such applications is its joining response to diverse materials. In an ongoing research program, the joining and integration of Si3N4 ceramics with metallic, ceramic, and composite materials using braze interlayers with the liquidus temperature in the range 750-1240C is being explored. In this paper, the self-joining behavior of Kyocera Si3N4 and St. Gobain Si3N4 using a ductile Cu-based active braze (Cu-ABA) containing Ti will be presented. Joint microstructure, composition, hardness, and strength as revealed by optical microscopy, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Knoop microhardness test, and offset compression shear test will be presented. Additionally, microstructure, composition, and joint strength of Si3N4/Inconel 625 joints made using Cu-ABA, will be presented. The results will be discussed with reference to the role of chemical reactions, wetting behavior, and residual stresses in joints.

  6. Micromachined Parts Advance Medicine, Astrophysics, and More

    Science.gov (United States)

    2015-01-01

    In the mid-1990s, Marshall Space Flight Center awarded two SBIR contracts to Potomac Photonics, now based in Baltimore, for the development of computerized workstations capable of mass-producing tiny, intricate, diffractive optical elements. While the company has since discontinued the workstations, those contracts set the stage for Potomac Photonics to be a leader in the micromachining industry, where NASA remains one of its clients.

  7. Micromachined Piezoelectric Actuators for Cryogenic Adaptive Optics, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — TRS Technologies proposes micromachined single crystal piezoelectric actuator arrays to enable ultra-large stroke, high precision shape control for large aperture,...

  8. In-pipe micromachine locomotion via the inertial stepping principle

    Energy Technology Data Exchange (ETDEWEB)

    Yum, Young Jin [University of Ulsan, Ulsan (Korea, Republic of); Hwang, Han Sub [Suweon Science College, Suweon (Korea, Republic of); Kelemen, Michal; Maxim, Vladislav; Frankovsky, Peter [Technical University of Kosice, Kosice (Slovakia)

    2014-08-15

    This paper discusses an in-pipe inspection micromachine intended for locomotion inside a small diameter pipe. The micromachine locomotion is based on the inertial stepping principle, which utilizes the drive force of the two-body impact. The in-pipe micromachine contacts the pipe through the elastic bristles installed on the in-pipe machine and in two lines and crossways with respect to the micromachine axle. The paper describes the principle of locomotion and the dynamics by which the unknown of both the parameters and the relations are experimentally identified. Based on the results, a simulation model was created, and the results of the simulations were compared with experimental results.

  9. Integrated circuits of silicon on insulator S.O.I. technologies: State of the art and perspectives

    International Nuclear Information System (INIS)

    Leray, J.L.; Dupont-Nivet, E.; Raffaelli, M.; Coic, Y.M.; Musseau, O.; Pere, J.F.; Lalande, P.; Bredy, J.; Auberton-Herve, A.J.; Bruel, M.; Giffard, B.

    1989-01-01

    Silicon On Insulator technologies have been proposed to increase the integrated circuits performances in radiation operation. Active researches are conducted, in France and abroad. This paper reviews briefly radiation effects phenomenology in that particular type of structure S.O.I. New results are presented that show very good radiation behaviour in term of speed, dose (10 to 100 megarad (Si)), dose rate and S.E.U. performances [fr

  10. Design of Surface Micromachined Compliant MEMS

    Energy Technology Data Exchange (ETDEWEB)

    Bradley, Joe Anthony [Iowa State Univ., Ames, IA (United States)

    2002-12-31

    The consideration of compliant mechanisms as Microelectromechanical Systems (MEMS) is the focus of this research endeavor. MEMS are micron to millimeter devices that combine electrical, mechanical, and information processing capabilities on the same device. These MEMS need some mechanical motion or parts that move relative to each other. This relative motion, using multiple parts, is not desired because of the assembly requirement and the friction introduced. Compliant devices limits or eliminates friction and the need for multi-component assembly. Compliant devices improve designs by creating single piece mechanisms. The purpose of this research is to validate surface micromachining as a viable fabrication process for compliant MEMS designs. Specifically, this research has sought to fabricate a micro-compliant gripper and a micro-compliant clamp to illustrate the process. While other researchers have created compliant MEMs, most have used comb-drive actuation methods and bulk micromachining processes. This research focused on fully-compliant devices that use device flexibility for motion and actuation. Validation of these compliant MEMS is achieved by structural optimization of device design and functional performance testing. This research contributes to the ongoing research in MEMS by evaluating the potential of using surface micromachining as a process for fabricating compliant micro-mechanisms.

  11. Design of Surface micromachined Compliant MEMS

    Energy Technology Data Exchange (ETDEWEB)

    Bradley, Joe Anthony [Iowa State Univ., Ames, IA (United States)

    2001-01-01

    The consideration of compliant mechanisms as Microelectromechanical Systems (MEMS) is the focus of this research endeavor. MEMS are micron to millimeter devices that combine electrical, mechanical, and information processing capabilities on the same device. These MEMS need some mechanical motion or parts that move relative to each other. This relative motion, using multiple parts, is not desired because of the assembly requirement and the friction introduced. Compliant devices limits or eliminates friction and the need for multi-component assembly. Compliant devices improve designs by creating single piece mechanisms. The purpose of this research is to validate surface micromachining as a viable fabrication process for compliant MEMS designs. Specifically, this research has sought to fabricate a micro-compliant gripper and a micro-compliant clamp to illustrate the process. While other researchers have created compliant MEMS, most have used comb-drive actuation methods and bulk micromachining processes. This research focuses on fully-compliant devices that use device flexibility for motion and actuation. Validation of these compliant MEMS is achieved by structural optimization of device design and functional performance testing. This research contributes to the ongoing research in MEMS by evaluating the potential of using surface micromachining as a process for fabricating compliant micro-mechanisms.

  12. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    CERN Document Server

    Alemi, M; Gys, Thierry; Mikulec, B; Piedigrossi, D; Puertolas, D; Rosso, E; Schomaker, R; Snoeys, W; Wyllie, Ken H

    2000-01-01

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface...

  13. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    International Nuclear Information System (INIS)

    Alemi, M.; Campbell, M.; Gys, T.; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K.

    2000-01-01

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface

  14. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    Energy Technology Data Exchange (ETDEWEB)

    Alemi, M.; Campbell, M.; Gys, T. E-mail: thierry.gys@cern.ch; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K

    2000-07-11

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface.

  15. Characterization of a novel Optical Micro-machined Ultrasound Transducer

    NARCIS (Netherlands)

    Leinders, S.M.

    2017-01-01

    We design and demonstrate a prototype ultrasound sensor based on a photonic micro-ring resonator integrated on a silicon membrane, and show that it can detect very low pressure ultrasound waves. The use of integrated photonics in future array transducers has several benefits: for instance it

  16. Development of capacitive micromachined ultrasonic transducer for noncontact ultrasonic detection

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Bok; Ahn, Bong Young; Park, Hae Won; Kim, Young Joo; Lee, Seung Seok [Center for Environment and Safrty Measurement, KRISS, Daejeon (Korea, Republic of)

    2004-11-15

    In this study, the capacitive micromachined ultrasonic transducer (cMUT) was developed. Theoretical analysis and finite element analysis of the behavior of membrane (such as resonance frequency, membrane deflection, collapse deflection and collapse voltage) of the cMUT were performed. The design parameters of the cMUT were estimated and are the dimension and thickness of membrane, thickness of sacrificial layer, thickness and size of electrode, size of active element and so on. With the micro-fabrication process, the cMUT was fabricated on the silicon wafer. To measure the membrane displacement of cMUT, the Michelson phase modulation fiber interferometer was constructed. The measured membrane displacement was good agreed with the result of finite element analysis. To estimate the ultrasonic wave generated by the cMUT, the ultrasonic transceiver system was constructed. The developed cMUT shows a good performance and hence will be widely used to the filed of non-contact ultrasonic application.

  17. Resonant gravimetric immuno sensing based on capacitive micromachined ultrasound transducers

    International Nuclear Information System (INIS)

    Virzonis, Darius; Gailius Vanagas; Dovydas Barauskas; Ramanaviciene, Almira; Makaraviciute, Asta; Ramanavicius, Arunas; Wen, Weijia; Kodzius, Rimantas

    2014-01-01

    High-frequency (40 MHz) and low-frequency (7 MHz) capacitive micromachined ultrasound transducers (CMUT) were fabricated and tested for use in gravimetric detection of biomolecules. The low-frequency CMUT sensors have a gold-coated surface, while the high-frequency sensors have a silicon nitride surface. Both surfaces were functionalized with bovine leukemia virus antigen gp51 acting as the antigen. On addition of an a specific antibody labeled with horseradish peroxidase (HRP), the antigen/antibody complex is formed on the surface and quantified by HRP-catalyzed oxidation of tetramethylbenzidine. It has been found that a considerably smaller quantity of immuno complex is formed on the high frequency sensor surface. In parallel, the loading of the surface of the CMUT was determined via resonance frequency and electromechanical resistance readings. Following the formation of the immuno complexes, the resonance frequencies of the low-frequency and high-frequency sensors decrease by up to 420 and 440 kHz, respectively. Finite element analysis reveals that the loading of the (gold-coated) low frequency sensors is several times larger than that on high frequency sensors. The formation of the protein film with pronounced elasticity and stress on the gold surface case is discussed. We also discuss the adoption of this method for the detection of DNA using a hybridization assay following polymerase chain reaction. (author)

  18. Development of capacitive micromachined ultrasonic transducer for noncontact ultrasonic detection

    International Nuclear Information System (INIS)

    Kim, Ki Bok; Ahn, Bong Young; Park, Hae Won; Kim, Young Joo; Lee, Seung Seok

    2004-01-01

    In this study, the capacitive micromachined ultrasonic transducer (cMUT) was developed. Theoretical analysis and finite element analysis of the behavior of membrane (such as resonance frequency, membrane deflection, collapse deflection and collapse voltage) of the cMUT were performed. The design parameters of the cMUT were estimated and are the dimension and thickness of membrane, thickness of sacrificial layer, thickness and size of electrode, size of active element and so on. With the micro-fabrication process, the cMUT was fabricated on the silicon wafer. To measure the membrane displacement of cMUT, the Michelson phase modulation fiber interferometer was constructed. The measured membrane displacement was good agreed with the result of finite element analysis. To estimate the ultrasonic wave generated by the cMUT, the ultrasonic transceiver system was constructed. The developed cMUT shows a good performance and hence will be widely used to the filed of non-contact ultrasonic application.

  19. Resonant gravimetric immunosensing based on capacitive micromachined ultrasound transducers

    KAUST Repository

    Viržonis, Darius

    2014-04-08

    High-frequency (40 MHz) and low-frequency (7 MHz) capacitive micromachined ultrasound transducers (CMUT) were fabricated and tested for use in gravimetric detection of biomolecules. The low-frequency CMUT sensors have a gold-coated surface, while the high-frequency sensors have a silicon nitride surface. Both surfaces were functionalized with bovine leukemia virus antigen gp51 acting as the antigen. On addition of an a specific antibody labeled with horseradish peroxidase (HRP), the antigen/antibody complex is formed on the surface and quantified by HRP-catalyzed oxidation of tetramethylbenzidine. It has been found that a considerably smaller quantity of immuno complex is formed on the high frequency sensor surface. In parallel, the loading of the surface of the CMUT was determined via resonance frequency and electromechanical resistance readings. Following the formation of the immuno complexes, the resonance frequencies of the low-frequency and high-frequency sensors decrease by up to 420 and 440 kHz, respectively. Finite element analysis reveals that the loading of the (gold-coated) low frequency sensors is several times larger than that on high frequency sensors. The formation of the protein film with pronounced elasticity and stress on the gold surface case is discussed. We also discuss the adoption of this method for the detection of DNA using a hybridization assay following polymerase chain reaction.

  20. TOPICAL REVIEW: Capacitive micromachined ultrasonic transducer arrays for minimally invasive medical ultrasound

    Science.gov (United States)

    Chen, Jingkuang

    2010-02-01

    This paper reviews the minimally invasive capacitive micromachined ultrasonic transducer (CMUT) arrays for medical diagnosis and therapy. While piezoelectric transducers dominate today's medical ultrasound market, the capacitive micromachined ultrasonic transducer has recently emerged as a promising alternative which delivers a comparable device performance to its piezoelectric counterparts, is compatible with front-end circuit integration, allows high-density imager integration and is relative easy in miniaturization. Utilizing MEMS technology, the substrate of CMUT arrays can be micromachined into miniature platforms with various geometrical shapes, which include needles, three-dimensional prisms, as well as other flexible-substrate configurations. These arrays are useful for reaching deep inside the tissue or an organ with a minimally invasive approach. Due to the close proximity of the transducers to the target organ/tissue, a higher resolution/accuracy of diagnostic information can be achieved. In addition to pulse-echo and photoacoustic imaging, high-power CMUT devices capable of delivering ultrasounds with a pressure greater than 1.0 MPa have been monolithically integrated with imager CMUTs for image-guided therapy (IGT). Such miniature devices would facilitate diagnostic and therapy interventions not possible with conventional piezoelectric transducers.

  1. Low-loss, silicon integrated, aluminum nitride photonic circuits and their use for electro-optic signal processing.

    Science.gov (United States)

    Xiong, Chi; Pernice, Wolfram H P; Tang, Hong X

    2012-07-11

    Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for optical signal processing and on-chip optical networks. However, silicon is limited to wavelengths above 1.1 μm and does not provide the desired lowest order optical nonlinearity for active signal processing. Here we report the integration of aluminum nitride (AlN) films on silicon substrates to bring active functionalities to chip-scale photonics. Using CMOS-compatible sputtered thin films we fabricate AlN-on-insulator waveguides that exhibit low propagation loss (0.6 dB/cm). Exploiting AlN's inherent Pockels effect we demonstrate electro-optic modulation up to 4.5 Gb/s with very low energy consumption (down to 10 fJ/bit). The ultrawide transparency window of AlN devices also enables high speed modulation at visible wavelengths. Our low cost, wideband, carrier-free photonic circuits hold promise for ultralow power and high-speed signal processing at the microprocessor chip level.

  2. Advanced technology trend survey of micromachines in Europe; Oshu ni okeru micromachine sentan gijutsu doko chosa

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-02-01

    In this research survey, the development trend of micromachine technology in Europe was surveyed, development level of micromachine technology of European companies was grasped, and practical application fields of their target were investigated. Technology development level of private companies in Japan`s national projects and practical application fields of Japan`s target were arranged. Trends of micromachine technology development are compared between Japanese companies and European companies. Among micromachine technology development projects in Europe, ``8520 MUST`` is a part of the ESPRIT Project. About 40,000 companies among about 170,000 companies in whole Europe are relating to the MUST Project. The main fields include the manufacturing technology, process control of machines, technology of safety, sensor technology in environmental fields, and automotive technology. The marketing fields of application include the automobile, military technology, home automation, industrial process, medical technology, environmental technology, and games. The results can be compared with the direction of research and development in Japan. 22 figs., 8 tabs.

  3. Monolithic CMUT on CMOS Integration for Intravascular Ultrasound Applications

    Science.gov (United States)

    Zahorian, Jaime; Hochman, Michael; Xu, Toby; Satir, Sarp; Gurun, Gokce; Karaman, Mustafa; Degertekin, F. Levent

    2012-01-01

    One of the most important promises of capacitive micromachined ultrasonic transducer (CMUT) technology is integration with electronics. This approach is required to minimize the parasitic capacitances in the receive mode, especially in catheter based volumetric imaging arrays where the elements need to be small. Furthermore, optimization of the available silicon area and minimized number of connections occurs when the CMUTs are fabricated directly above the associated electronics. Here, we describe successful fabrication and performance evaluation of CMUT arrays for intravascular imaging on custom designed CMOS receiver electronics from a commercial IC foundry. The CMUT on CMOS process starts with surface isolation and mechanical planarization of the CMOS electronics to reduce topography. The rest of the CMUT fabrication is achieved by modifying a low temperature micromachining process through the addition of a single mask and developing a dry etching step to produce sloped sidewalls for simple and reliable CMUT to CMOS interconnection. This CMUT to CMOS interconnect method reduced the parasitic capacitance by a factor of 200 when compared with a standard wire bonding method. Characterization experiments indicate that the CMUT on CMOS elements are uniform in frequency response and are similar to CMUTs simultaneously fabricated on standard silicon wafers without electronics integration. Experiments on a 1.6 mm diameter dual-ring CMUT array with a 15 MHz center frequency show that both the CMUTs and the integrated CMOS electronics are fully functional. The SNR measurements indicate that the performance is adequate for imaging CTOs located 1 cm away from the CMUT array. PMID:23443701

  4. A Novel Silicon-based Wideband RF Nano Switch Matrix Cell and the Fabrication of RF Nano Switch Structures

    Directory of Open Access Journals (Sweden)

    Yi Xiu YANG

    2011-12-01

    Full Text Available This paper presents the concept of RF nano switch matrix cell and the fabrication of RF nano switch. The nano switch matrix cell can be implemented into complex switch matrix for signal routing. RF nano switch is the decision unit for the matrix cell; in this research, it is fabricated on a tri-layer high-resistivity-silicon substrate using surface micromachining approach. Electron beam lithography is introduced to define the pattern and IC compatible deposition process is used to construct the metal layers. Silicon-based nano switch fabricated by IC compatible process can lead to a high potential of system integration to perform a cost effective system-on-a-chip solution. In this paper, simulation results of the designed matrix cell are presented; followed by the details of the nano structure fabrication and fabrication challenges optimizations; finally, measurements of the fabricated nano structure along with analytical discussions are also discussed.

  5. Study of surfactant-added TMAH for applications in DRIE and wet etching-based micromachining

    Science.gov (United States)

    Tang, B.; Shikida, M.; Sato, K.; Pal, P.; Amakawa, H.; Hida, H.; Fukuzawa, K.

    2010-06-01

    In this paper, etching anisotropy is evaluated for a number of different crystallographic orientations of silicon in a 0.1 vol% Triton-X-100 added 25 wt% tetramethylammonium hydroxide (TMAH) solution using a silicon hemisphere. The research is primarily aimed at developing advanced applications of wet etching in microelectromechanical systems (MEMS). The etching process is carried out at different temperatures in the range of 61-81 °C. The etching results of silicon hemisphere and different shapes of three-dimensional structures in {1 0 0}- and {1 1 0}-Si surfaces are analyzed. Significantly important anisotropy, different from a traditional etchant (e.g. pure KOH and TMAH), is investigated to extend the applications of the wet etching process in silicon bulk micromachining. The similar etching behavior of exact and vicinal {1 1 0} and {1 1 1} planes in TMAH + Triton is utilized selectively to remove the scalloping from deep reactive-ion etching (DRIE) etched profiles. The direct application of the present research is demonstrated by fabricating a cylindrical lens with highly smooth etched surface finish. The smoothness of a micro-lens at different locations is measured qualitatively by a scanning electron microscope and quantitatively by an atomic force microscope. The present paper provides a simple and effective fabrication method of the silicon micro-lens for optical MEMS applications.

  6. Micro filtration membrane sieve with silicon micro machining for industrial and biomedical applications

    NARCIS (Netherlands)

    van Rijn, C.J.M.; Elwenspoek, Michael Curt

    1995-01-01

    With the use of silicon micromachining an inorganic membrane sieve for microfiltration is constructed, having a siliconnitride membrane layer with thickness typically 1 pm and perforations typically between 0.5 pm and 10 pm in diameter. As a support a -silicon wafer with openings of loo0 pm in

  7. Clinical trial of an experimental cleaning solution: antibiofilm effect and integrity of a silicone-based denture liner.

    Science.gov (United States)

    Segundo, Antonio de Luna Malheiros; Pisani, Marina Xavier; Nascimento, Céssio do; Souza, Raphael Freitas; Paranhos, Helena de Freitas Oliveira; Silva-Lovato, Cléudia Helena

    2014-09-01

    This study evaluated the antibiofilm effect of an experimental solution of 2% Ricinus communis (R. communis) on a silicone-based denture liner by means of a randomized clinical trial, as well as the integrity of such liner following a cleansing regimen with such solution. About 30 complete denture wearers had their lower dentures relined with a silicone-based denture liner and randomly allocated to cleanse their dentures by means of: (A) a specific toothbrush for complete dentures and dentifrice; (B) soaking in an experimental 2% R. communis solution; and (C) association of A and B. Considered outcomes were biofilm coverage area (%), microbial counts by means of the deoxy-ribonucleic acid (DNA) checkerboard hybridization technique and physical integrity of the soft liner, assessed during a time interval of 60 days. Mean group values were compared by analysis of variance (ANOVA) and Tukey tests or generalized linear method (α = 0.05). The mechanical method presented the lowest biofilm percentage (1.45 ± 1.03) if compared to the chemical method (2.96 ± 1.98) and the associated one (2.71 ± 1.76). After 60 days (3.37 ± 2.04), biofilm accumulation was higher than at 15 days (1.28 ± 0.77) and 30 days (2.46 ± 1.54). The denture liner was less deteriorated and kept its physical integrity when the mechanical method was applied. The chemical method presented higher effectiveness against microorganisms, including some Candida species. The 2% R. communis solution presented stronger antimicrobial capacity than brushing on a silicone-based denture liner after immersion. However, it was not superior to the mechanical method in preserving the physical integrity of the material and in biofilm removal. Soft denture liners hygiene is a very important issue and not conclusive in the literature. The experimental solution of 2% R. communis evaluated presented promising antimicrobial potential and should be more explored to be recommended as cleanser.

  8. Flexure-beam micromirror devices and potential expansion for smart micromachining

    Science.gov (United States)

    Lin, Tseng-Hwang

    1996-05-01

    Texas Instruments has been developing both digital and analog micromirror devices since the late 1970s. The analog flexure-beam micromirror devices are primarily targeted for imaging identification. Digital multiplexing mechanisms are used in column and row selection to address discretized analog signals into the array. Amplifiers and sample-and-hold circuits provide the appropriate signal range to control the micromirrors. Analog-to-digital and digital- to-analog conversions are currently built into the interface electronics, and will potentially be built into the chip. The micromirror devices are built on the top of the addressing circuits using sacrificial layers and two different metal layers. This concept of surface micromachining and mixed-signal circuit integration enables us to investigate the possibility of smart micromachining. Micromirror device applications can expand beyond optical applications into microsensor and other microactuator areas. The addressing circuits can be used in the interface of analog real-world and smart control circuits.

  9. Fabrication of three-dimensional microdisk resonators in calcium fluoride by femtosecond laser micromachining

    Science.gov (United States)

    Lin, Jintian; Xu, Yingxin; Tang, Jialei; Wang, Nengwen; Song, Jiangxin; He, Fei; Fang, Wei; Cheng, Ya

    2014-09-01

    We report on fabrication of on-chip calcium fluoride (CaF2) microdisk resonators using water-assisted femtosecond laser micromachining. Focused ion beam (FIB) milling is used to create ultra-smooth sidewalls. The quality ( Q) factors of the fabricated microresonators are measured to be 4.2 × 104 at wavelengths near 1,550 nm. The Q factor is mainly limited by the scattering from the bottom surface of the disk whose roughness remains high due to the femtosecond laser micromachining process. This technique facilitates the formation of on-chip microresonators on various kinds of bulk crystalline materials, which can benefit a wide range of applications such as nonlinear optics, quantum optics, and chip-level integration of photonic devices.

  10. Optofluidic Microlasers based on Femtosecond Micromachining Technology

    Directory of Open Access Journals (Sweden)

    Simoni F.

    2017-08-01

    Full Text Available We present the different optofluidic lasers which have been realized using the Femtosecond Micromachining technique to fabricate the monolithic optofluidic structures in glass chips. We show how the great flexibility of this 3D technique allows getting different kind of optical cavities. The most recent devices fabricated by this technique as ring shaped and Fabry-Perot resonators show excellent emission performances.We also point out how the addition of the inkjet printing technique provides further opportunities in realizing optofluidic chips.

  11. Capacitive micromachined ultrasonic transducer based tilt sensing

    Science.gov (United States)

    Yu, Hongbin; Guo, Bin; Haridas, Kuruveettil; Lin, Tsu-Hui; Hao Cheong, Jia; Lin Tsai, Ming; Boon Yee, Tack

    2012-10-01

    In this paper, a tilt sensing mechanism based on the capacitive micromachined ultrasound transducers (CMUTs) is presented. By measuring the difference in the time of flight of various pulse-echo signals from different CMUT transmitting elements to one common receiving element in the oil bath, the tilt angle of the oil surface can be determined. With the proposed device, the maximum tilt angles of 20° and 28° have been measured in the clockwise and counterclockwise directions, respectively, and the difference between the measured and the theoretical values of the tilt angle was found to be within 0.05° during the whole test.

  12. Echelle grating for silicon photonics applications: integration of electron beam lithography in the process flow and first results

    Science.gov (United States)

    Kaschel, Mathias; Letzkus, Florian; Butschke, Jörg; Skwierawski, Piotr; Schneider, Marc; Weber, Marc

    2016-05-01

    We present the technology steps to integrate an Echelle grating in the process flow of silicon-organic hybrid (SOH) modulators or related active devices. The CMOS-compatible process flow on SOI substrates uses a mix of optical i-line lithography and electron beam lithography (EBL). High speed optical data communication depends on wavelength divisions multiplexing and de-multiplexing devices like Echelle gratings. The minimum feature sizes vary from device to device and reach down to 60 nm inside a modulator, while the total area of a single Echelle grating is up to several mm2 of unprocessed silicon. Resist patterning using a variable shape beam electron beam pattern generator allows high resolution. An oxide hard mask is deposited, patterns are structured threefold by EBL and are later transferred to the silicon. We demonstrate a 9-channel multiplexer featuring a 2 dB on-chip loss and an adjacent channel crosstalk better than -22 dB. Additionally a 45-channel Echelle multiplexer is presented with 5 dB on chip loss and a channel crosstalk better than -12 dB. The devices cover an on-chip area of only 0.08 mm2 and 0.5 mm2 with a wavelength spacing of 10.5 nm and 2.0 nm, respectively.

  13. Band structure properties of (BGa)P semiconductors for lattice matched integration on (001) silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hossain, Nadir; Sweeney, Stephen [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Hosea, Jeff [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, UK and Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Liebich, Sven; Zimprich, Martin; Volz, Kerstin; Stolz, Wolfgang [Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg (Germany); Kunert, Bernerdette [NAsP III/V GmbH, Am Knechtacker 19, 35041 Marburg (Germany)

    2013-12-04

    We report the band structure properties of (BGa)P layers grown on silicon substrate using metal-organic vapour-phase epitaxy. Using surface photo-voltage spectroscopy we find that both the direct and indirect band gaps of (BGa)P alloys (strained and unstrained) decrease with Boron content. Our experimental results suggest that the band gap of (BGa)P layers up to 6% Boron is large and suitable to be used as cladding and contact layers in GaP-based quantum well heterostructures on silicon substrates.

  14. Performance of integrated retainer rings in silicon micro-turbines with thrust style micro-ball bearings

    International Nuclear Information System (INIS)

    Hergert, Robert J; Holmes, Andrew S; Hanrahan, Brendan; Ghodssi, Reza

    2013-01-01

    This work explores the performance of different silicon retainer ring designs when integrated into silicon micro-turbines (SMTs) incorporating thrust style bearings supported on 500 µm diameter steel balls. Experimental performance curves are presented for SMTs with rotor diameters of 5 mm and 10 mm, each with five different retainer designs varying in mechanical rigidity, ball pocket shape and ball complement. It was found that the different retainer designs yielded different performance curves, with the closed pocket designs consistently requiring lower input power for a given rotation speed, and the most rigid retainers giving the best performance overall. Both 5 mm and 10 mm diameter devices have shown repeatable performance at rotation speeds up to and exceeding 20 000 RPM with input power levels below 2 W, and devices were tested for over 2.5 million revolutions without failure. Retainer rings are commonly used in macro-scale bearings to ensure uniform spacing between the rolling elements. The integration of retainers into micro-bearings could lower costs by reducing the number of balls required for stable operation, and also open up the possibility of ‘smart’ bearings with integrated sensors to monitor the bearing status. (paper)

  15. Fabrication of a microstrip patch antenna integrated in low-resistance silicon wafer using a BCB dielectric

    Science.gov (United States)

    Tianxi, Wang; Mei, Han; Gaowei, Xu; Le, Luo

    2013-10-01

    This paper demonstrates a technique for microstrip patch antenna fabrication using a benzocyclobutene (BCB) dielectric. The most distinctive feature of this method is that the antenna is integrated on a low-resistance silicon wafer, and is fully compatible with the microwave multi-chip module packaging process. Low-permittivity dielectric BCB with excellent thermal and mechanical stability is employed to enhance the performance of the antenna. The as-fabricated antenna is characterized, and the experimental results show that the antenna resonates at 14.9 GHz with a 1.67% impedance bandwidth.

  16. Development and characterisation of silicon photomultipliers with bulk-integrated quench resistors for future applications in particle and astroparticle physics

    International Nuclear Information System (INIS)

    Jendrysik, Christian

    2014-01-01

    This thesis deals with the development and characterisation of a novel silicon photomultiplier concept with bulk-integrated quench resistors. The approach allows the realisation of a free entrance window and high fill factors, which leads to an improvement of the detection efficiency. With first prototype productions a proof of concept was possible. A full characterisation provided promising results, in particular with respect to the photon detection efficiency. By customising the simulation tools, a reliable description of the devices was achieved. In addition, conceptual studies of the next device generation demonstrated the possibility of single cell readout, expanding the application range of those detectors to particle tracking.

  17. Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

    KAUST Repository

    Bahabry, Rabab R.

    2017-11-30

    The solar cells market has an annual growth of more than 30 percent over the past 15 years. At the same time, the cost of the solar modules diminished to meet both of the rapid global demand and the technological improvements. In particular for the crystalline silicon solar cells, the workhorse of this technology. The objective of this doctoral thesis is enhancing the efficiency of c-Si solar cells while exploring the cost reduction via innovative techniques. Contact metallization and ultra-flexible wafer based c-Si solar cells are the main areas under investigation. First, Silicon-based solar cells typically utilize screen printed Silver (Ag) metal contacts which affect the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used for the front contact grid lines. In this work, investigation of the microstructure and the electrical characteristics of nickel monosilicide (NiSi) ohmic contacts on the rear side of c-Si solar cells has been carried out. Significant enhancement in the fill factor leading to increasing the total power conversion efficiency is observed. Second, advanced classes of modern application require a new generation of versatile solar cells showcasing extreme mechanical resilience. However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption with less active Si material. Here, a complementary metal oxide semiconductor (CMOS) technology based integration strategy is designed where corrugation architecture to enable an ultra-flexible solar cell module from bulk mono-crystalline silicon solar wafer with 17% efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness and achieves flexibility via interdigitated back contacts. These cells

  18. Design, fabrication, testing and packaging of a silicon ...

    Indian Academy of Sciences (India)

    Design, fabrication, testing and packaging of a silicon micromachined radio frequency microelectromechanical series (RF MEMS) switch. M S Giridhar Ashwini Jambhalikar Jiju John R Islam Ananda Behera C L Nagendra George Thachil M P Srikanth Shailesh Somani B H M Darukesha Srinivasarao Bollu. Volume 38 Issue ...

  19. The Piezojunction Effect in Silicon. Consequences and Applications for Integrated Circuits and Sensors

    NARCIS (Netherlands)

    Fruett, F.

    2001-01-01

    This thesis describes an investigation of the piezojunction effect in silicon. The aim of this investigation is twofold. First, to propose some techniques to reduce the mechanical-stress-induced inaccuracy and long-term instability of many analogue circuits such as bandgap references and monolithic

  20. Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications

    NARCIS (Netherlands)

    Hussein, M.G.; Worhoff, Kerstin; Sengo, G.; Sengo, G.; Driessen, A.

    2007-01-01

    Silicon oxynitride $(SiO_{x}N_{y}:H)$ layers were grown from 2% $SiH_{4}/N_{2}$ and $N_{2}O$ gas mixtures by plasma-enhanced chemical vapor deposition (PECVD). Layer properties such as refractive index, deposition rate, thickness non-uniformity and hydrogen bond content were correlated to the

  1. Monolithic integration of detectors and transistors on high-resistivity silicon

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Batignani, Giovanni; Boscardin, Maurizio; Bosisio, Luciano; Gregori, Paolo; Pancheri, Lucio; Piemonte, Claudio; Ratti, Lodovico; Verzellesi, Giovanni; Zorzi, Nicola

    2007-01-01

    We report on the most recent results from an R and D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed

  2. All-optical Integrated Switches Based on Azo-benzene Liquid Crystals on Silicon

    Science.gov (United States)

    2011-11-01

    Conclusions References List of Figures and Tables Fig. 1: Tridimensional schematic of the LCW and a representation of the molecular...controlled Silicon V-groove: methods, assumptions and procedures Fig. 1: Tridimensional schematic of the LCW and a representation of molecular

  3. Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

    1999-01-01

    Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

  4. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    International Nuclear Information System (INIS)

    Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

    2013-01-01

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n + -type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force

  5. Chemiluminescence lateral flow immunoassay cartridge with integrated amorphous silicon photosensors array for human serum albumin detection in urine samples.

    Science.gov (United States)

    Zangheri, Martina; Di Nardo, Fabio; Mirasoli, Mara; Anfossi, Laura; Nascetti, Augusto; Caputo, Domenico; De Cesare, Giampiero; Guardigli, Massimo; Baggiani, Claudio; Roda, Aldo

    2016-12-01

    A novel and disposable cartridge for chemiluminescent (CL)-lateral flow immunoassay (LFIA) with integrated amorphous silicon (a-Si:H) photosensors array was developed and applied to quantitatively detect human serum albumin (HSA) in urine samples. The presented analytical method is based on an indirect competitive immunoassay using horseradish peroxidase (HRP) as a tracer, which is detected by adding the luminol/enhancer/hydrogen peroxide CL cocktail. The system comprises an array of a-Si:H photosensors deposited on a glass substrate, on which a PDMS cartridge that houses the LFIA strip and the reagents necessary for the CL immunoassay was optically coupled to obtain an integrated analytical device controlled by a portable read-out electronics. The method is simple and fast with a detection limit of 2.5 mg L -1 for HSA in urine and a dynamic range up to 850 mg L -1 , which is suitable for measuring physiological levels of HSA in urine samples and their variation in different diseases (micro- and macroalbuminuria). The use of CL detection allowed accurate and objective analyte quantification in a dynamic range that extends from femtomoles to picomoles. The analytical performances of this integrated device were found to be comparable with those obtained using a charge-coupled device (CCD) as a reference off-chip detector. These results demonstrate that integrating the a-Si:H photosensors array with CL-LFIA technique provides compact, sensitive and low-cost systems for CL-based bioassays with a wide range of applications for in-field and point-of-care bioanalyses. Graphical Abstract A novel integrated portable device was developed for direct quantitative detection of human serum albumin (HSA) in urine samples, exploiting a chemiluminescence lateral flow immunoassay (LFIA). The device comprises a cartridge that holds the LFIA strip and all the reagents necessary for the analysis, an array of amorphous silicon photosensors, and a custom read-out electronics.

  6. Modeling and Experimental Study on Characterization of Micromachined Thermal Gas Inertial Sensors

    Directory of Open Access Journals (Sweden)

    Yan Su

    2010-09-01

    Full Text Available Micromachined thermal gas inertial sensors based on heat convection are novel devices that compared with conventional micromachined inertial sensors offer the advantages of simple structures, easy fabrication, high shock resistance and good reliability by virtue of using a gaseous medium instead of a mechanical proof mass as key moving and sensing elements. This paper presents an analytical modeling for a micromachined thermal gas gyroscope integrated with signal conditioning. A simplified spring-damping model is utilized to characterize the behavior of the sensor. The model relies on the use of the fluid mechanics and heat transfer fundamentals and is validated using experimental data obtained from a test-device and simulation. Furthermore, the nonideal issues of the sensor are addressed from both the theoretical and experimental points of view. The nonlinear behavior demonstrated in experimental measurements is analyzed based on the model. It is concluded that the sources of nonlinearity are mainly attributable to the variable stiffness of the sensor system and the structural asymmetry due to nonideal fabrication.

  7. The laser micro-machining system for diamond anvil cell experiments and general precision machining applications at the High Pressure Collaborative Access Team.

    Science.gov (United States)

    Hrubiak, Rostislav; Sinogeikin, Stanislav; Rod, Eric; Shen, Guoyin

    2015-07-01

    We have designed and constructed a new system for micro-machining parts and sample assemblies used for diamond anvil cells and general user operations at the High Pressure Collaborative Access Team, sector 16 of the Advanced Photon Source. The new micro-machining system uses a pulsed laser of 400 ps pulse duration, ablating various materials without thermal melting, thus leaving a clean edge. With optics designed for a tight focus, the system can machine holes any size larger than 3 μm in diameter. Unlike a standard electrical discharge machining drill, the new laser system allows micro-machining of non-conductive materials such as: amorphous boron and silicon carbide gaskets, diamond, oxides, and other materials including organic materials such as polyimide films (i.e., Kapton). An important feature of the new system is the use of gas-tight or gas-flow environmental chambers which allow the laser micro-machining to be done in a controlled (e.g., inert gas) atmosphere to prevent oxidation and other chemical reactions in air sensitive materials. The gas-tight workpiece enclosure is also useful for machining materials with known health risks (e.g., beryllium). Specialized control software with a graphical interface enables micro-machining of custom 2D and 3D shapes. The laser-machining system was designed in a Class 1 laser enclosure, i.e., it includes laser safety interlocks and computer controls and allows for routine operation. Though initially designed mainly for machining of the diamond anvil cell gaskets, the laser-machining system has since found many other micro-machining applications, several of which are presented here.

  8. The laser micro-machining system for diamond anvil cell experiments and general precision machining applications at the High Pressure Collaborative Access Team

    Science.gov (United States)

    Hrubiak, Rostislav; Sinogeikin, Stanislav; Rod, Eric; Shen, Guoyin

    2015-07-01

    We have designed and constructed a new system for micro-machining parts and sample assemblies used for diamond anvil cells and general user operations at the High Pressure Collaborative Access Team, sector 16 of the Advanced Photon Source. The new micro-machining system uses a pulsed laser of 400 ps pulse duration, ablating various materials without thermal melting, thus leaving a clean edge. With optics designed for a tight focus, the system can machine holes any size larger than 3 μm in diameter. Unlike a standard electrical discharge machining drill, the new laser system allows micro-machining of non-conductive materials such as: amorphous boron and silicon carbide gaskets, diamond, oxides, and other materials including organic materials such as polyimide films (i.e., Kapton). An important feature of the new system is the use of gas-tight or gas-flow environmental chambers which allow the laser micro-machining to be done in a controlled (e.g., inert gas) atmosphere to prevent oxidation and other chemical reactions in air sensitive materials. The gas-tight workpiece enclosure is also useful for machining materials with known health risks (e.g., beryllium). Specialized control software with a graphical interface enables micro-machining of custom 2D and 3D shapes. The laser-machining system was designed in a Class 1 laser enclosure, i.e., it includes laser safety interlocks and computer controls and allows for routine operation. Though initially designed mainly for machining of the diamond anvil cell gaskets, the laser-machining system has since found many other micro-machining applications, several of which are presented here.

  9. The laser micro-machining system for diamond anvil cell experiments and general precision machining applications at the High Pressure Collaborative Access Team

    International Nuclear Information System (INIS)

    Hrubiak, Rostislav; Sinogeikin, Stanislav; Rod, Eric; Shen, Guoyin

    2015-01-01

    We have designed and constructed a new system for micro-machining parts and sample assemblies used for diamond anvil cells and general user operations at the High Pressure Collaborative Access Team, sector 16 of the Advanced Photon Source. The new micro-machining system uses a pulsed laser of 400 ps pulse duration, ablating various materials without thermal melting, thus leaving a clean edge. With optics designed for a tight focus, the system can machine holes any size larger than 3 μm in diameter. Unlike a standard electrical discharge machining drill, the new laser system allows micro-machining of non-conductive materials such as: amorphous boron and silicon carbide gaskets, diamond, oxides, and other materials including organic materials such as polyimide films (i.e., Kapton). An important feature of the new system is the use of gas-tight or gas-flow environmental chambers which allow the laser micro-machining to be done in a controlled (e.g., inert gas) atmosphere to prevent oxidation and other chemical reactions in air sensitive materials. The gas-tight workpiece enclosure is also useful for machining materials with known health risks (e.g., beryllium). Specialized control software with a graphical interface enables micro-machining of custom 2D and 3D shapes. The laser-machining system was designed in a Class 1 laser enclosure, i.e., it includes laser safety interlocks and computer controls and allows for routine operation. Though initially designed mainly for machining of the diamond anvil cell gaskets, the laser-machining system has since found many other micro-machining applications, several of which are presented here

  10. Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

    Science.gov (United States)

    Zhang, Liping; Sawchuk, Alexander A.

    2001-12-01

    We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

  11. Chemical surface modifications for the development of silicon-based label-free integrated optical (IO) biosensors: a review.

    Science.gov (United States)

    Bañuls, María-José; Puchades, Rosa; Maquieira, Ángel

    2013-05-13

    Increasing interest has been paid to label-free biosensors in recent years. Among them, refractive index (RI) optical biosensors enable high density and the chip-scale integration of optical components. This makes them more appealing to help develop lab-on-a-chip devices. Today, many RI integrated optical (IO) devices are made using silicon-based materials. A key issue in their development is the biofunctionalization of sensing surfaces because they provide a specific, sensitive response to the analyte of interest. This review critically discusses the biofunctionalization procedures, assay formats and characterization techniques employed in setting up IO biosensors. In addition, it provides the most relevant results obtained from using these devices for real sample biosensing. Finally, an overview of the most promising future developments in the fields of chemical surface modification and capture agent attachment for IO biosensors follows. Copyright © 2013 Elsevier B.V. All rights reserved.

  12. Integrating a dual-silicon photoelectrochemical cell into a redox flow battery for unassisted photocharging

    DEFF Research Database (Denmark)

    Liao, Shichao; Zong, Xu; Seger, Brian

    2016-01-01

    Solar rechargeable flow cells (SRFCs) provide an attractive approach for in situ capture and storage of intermittent solar energy via photoelectrochemical regeneration of discharged redox species for electricity generation. However, overall SFRC performance is restricted by inefficient photoelect......Solar rechargeable flow cells (SRFCs) provide an attractive approach for in situ capture and storage of intermittent solar energy via photoelectrochemical regeneration of discharged redox species for electricity generation. However, overall SFRC performance is restricted by inefficient...... photoelectrochemical reactions. Here we report an efficient SRFC based on a dual-silicon photoelectrochemical cell and a quinone/bromine redox flow battery for in situ solar energy conversion and storage. Using narrow bandgap silicon for efficient photon collection and fast redox couples for rapid interface charge...

  13. Design of Elastomer Structure to Facilitate Incorporation of Expanded Graphite in Silicones Without Compromising Electromechanical Integrity

    DEFF Research Database (Denmark)

    Hassouneh, Suzan Sager; Daugaard, Anders Egede; Skov, Anne Ladegaard

    2015-01-01

    The development of elastomer materials with a high dielectric permittivity has attracted increased interest over the past years due to their use in, for example, dielectric elastomers. For this particular use, both the electrically insulating properties - as well as the mechanical properties......-functional crosslinker, which allows for development of a suitable network matrix. The dielectric permittivity was increased by almost a factor of 4 compared to a benchmark silicone elastomer....

  14. MEASUREMENT OF NANOSTRUCTURES WITH MICROMACHINED MICROSCOPES

    Energy Technology Data Exchange (ETDEWEB)

    G.S. KINO; W.E. MOERNER

    2005-04-30

    We have made reproducible scanning probes with high efficiency, and predictable and reproducible character-istics. We obtained good efficiency with dimensions well below the diffraction limit, so that rela-tively small laser powers in the milliwatt range can be used. For single frequency operation, only low power is necessary to obtain very high fields for the excitation of well-defined Raman scattering, and to work in a reflection mode with good scanning speeds; obtained predictable results with very high fields suitable for obtaining Raman scattering and two-photon scattering; made a scanning probe mounted on a micromachined cantilever to obtain high definition reflection mode images that can be scanned rapidly;and observed Raman scattering using bowtie antennas with CW excitation.

  15. Fabrication of a novel quartz micromachined gyroscope

    Directory of Open Access Journals (Sweden)

    Liqiang Xie

    2015-04-01

    Full Text Available A novel quartz micromachined gyroscope is proposed in this paper. The novel gyroscope is realized by quartz anisotropic wet etching and 3-dimensional electrodes deposition. In the quartz wet etching process, the quality of Cr/Au mask films affecting the process are studied by experiment. An excellent mask film with 100 Å Cr and 2000 Å Au is achieved by optimization of experimental parameters. Crystal facets after etching seriously affect the following sidewall electrodes deposition process and the structure’s mechanical behaviours. Removal of crystal facets is successfully implemented by increasing etching time based on etching rate ratios between facets and crystal planes. In the electrodes deposition process, an aperture mask evaporation method is employed to prepare electrodes on 3-dimensional surfaces of the gyroscope structure. The alignments among the aperture masks are realized by the ABM™ Mask Aligner System. Based on the processes described above, a z–axis quartz gyroscope is fabricated successfully.

  16. Micromachined two dimensional resistor arrays for determination of gas parameters

    NARCIS (Netherlands)

    van Baar, J.J.J.; Verwey, Willem B.; Dijkstra, Mindert; Dijkstra, Marcel; Wiegerink, Remco J.; Lammerink, Theodorus S.J.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt

    A resistive sensor array is presented for two dimensional temperature distribution measurements in a micromachined flow channel. This allows simultaneous measurement of flow velocity and fluid parameters, like thermal conductivity, diffusion coefficient and viscosity. More general advantages of

  17. Surface Micromachined Arrays of Transition-Edge Detectors, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — An innovative surface micromachining technique is described for the fabrication of closely-packed arrays of transition edge sensor (TES) x-ray microcalorimeters....

  18. Structure optimization and simulation analysis of the quartz micromachined gyroscope

    Directory of Open Access Journals (Sweden)

    Xuezhong Wu

    2014-02-01

    Full Text Available Structure optimization and simulation analysis of the quartz micromachined gyroscope are reported in this paper. The relationships between the structure parameters and the frequencies of work mode were analysed by finite element analysis. The structure parameters of the quartz micromachined gyroscope were optimized to reduce the difference between the frequencies of the drive mode and the sense mode. The simulation results were proved by testing the prototype gyroscope, which was fabricated by micro-electromechanical systems (MEMS technology. Therefore, the frequencies of the drive mode and the sense mode can match each other by the structure optimization and simulation analysis of the quartz micromachined gyroscope, which is helpful in the design of the high sensitivity quartz micromachined gyroscope.

  19. A Physically Transient Form of Silicon Electronics, With Integrated Sensors, Actuators and Power Supply

    Science.gov (United States)

    Hwang, Suk-Won; Tao, Hu; Kim, Dae-Hyeong; Cheng, Huanyu; Song, Jun-Kyul; Rill, Elliott; Brenckle, Mark A.; Panilaitis, Bruce; Won, Sang Min; Kim, Yun-Soung; Yu, Ki Jun; Ameen, Abid; Li, Rui; Su, Yewang; Yang, Miaomiao; Kaplan, David L.; Zakin, Mitchell R.; Slepian, Marvin J.; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.

    2013-01-01

    A remarkable feature of modern silicon electronics is its ability to remain functionally and physically invariant, almost indefinitely for many practical purposes. Here, we introduce a silicon-based technology that offers the opposite behavior: it gradually vanishes over time, in a well-controlled, programmed manner. Devices that are ‘transient’ in this sense create application possibilities that cannot be addressed with conventional electronics, such as active implants that exist for medically useful timeframes, but then completely dissolve and disappear via resorption by the body. We report a comprehensive set of materials, manufacturing schemes, device components and theoretical design tools for a complementary metal oxide semiconductor (CMOS) electronics of this type, together with four different classes of sensors and actuators in addressable arrays, two options for power supply and a wireless control strategy. A transient silicon device capable of delivering thermal therapy in an implantable mode and its demonstration in animal models illustrate a system-level example of this technology. PMID:23019646

  20. Micro-fabricated silicon devices for advanced thermal management and integration of particle tracking detectors

    CERN Document Server

    Romagnoli, Giulia; Gambaro, Carla

    Since their first studies targeting the cooling of high-power computing chips, micro-channel devices are proven to provide a very efficient cooling system. In the last years micro-channel cooling has been successfully applied to the cooling of particle detectors at CERN. Thanks to their high thermal efficiency, they can guarantee a good heat sink for the cooling of silicon trackers, fundamental for the reduction of the radiation damage caused by the beam interactions. The radiation damage on the silicon detector is increasing with temperature and furthermore the detectors are producing heat that should be dissipated in the supporting structure. Micro-channels guarantee a distributed and uniform thermal exchange, thanks to the high flexibility of the micro-fabrication process that allows a large variety of channel designs. The thin nature of the micro-channels etched inside silicon wafers, is fulfilling the physics requirement of minimization of the material crossed by the particle beam. Furthermore micro-chan...

  1. Non-traditional micromachining processes fundamentals and applications

    CERN Document Server

    Bhattacharyya, B; Davim, J

    2017-01-01

    This book presents a complete coverage of micromachining processes from their basic material removal phenomena to past and recent research carried by a number of researchers worldwide. Chapters on effective utilization of material resources, improved efficiency, reliability, durability, and cost effectiveness of the products are presented. This book provides the reader with new and recent developments in the field of micromachining and microfabrication of engineering materials.

  2. A new soft dielectric silicone elastomer matrix with high mechanical integrity and low losses

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    Though dielectric elastomers (DEs) have many favourable properties, the issue of high driving voltages limits the commercial viability of the technology. Driving voltage can be lowered by decreasing the Young's modulus and increasing the dielectric permittivity of silicone elastomers. A decrease...... in Young's modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. A new soft elastomer matrix, with no loss of mechanical stability and high dielectric permittivity, was prepared through the use of alkyl chloride-functional siloxane copolymers...

  3. Modeling and feasibility study of a high resolution numerical time encoder in silicon and gallium arsenide integrated technologies

    International Nuclear Information System (INIS)

    Fota, C.

    1996-12-01

    This work is part of an evaluation of a high resolution time encoder implemented as a circular vernier. Two integrated technologies have been used, silicon CMOS and GaAs HEMT. After a short survey of the existing time encoding techniques, we propose a digital method using a circular time vernier built around two ring oscillators. We present the benefits of such a technique, a detailed analysis of the vernier, and simulation results. Technological spreads that are critical for such a time encoder have been measured on a silicon ship with 0.8 micron gate length CMOS technology. The achievable resolution is derived from the results. The frequencies dictated by the circular vernier architecture reach a few hundred Megahertz, the chip layout is thus critical, as showed from the measurements on a 0.3 micron GaAs HEMT chip. Measurements are compared with simulations for each chip. Several other circular vernier layouts are proposed in order to improve the results. A mathematical model of a calibration phase lock loop of the ring oscillators on a reference clock is also presented. (author)

  4. Investigation of Properties of Novel Silicon Pixel Assemblies Employing Thin n-in-p Sensors and 3D-Integration

    CERN Document Server

    Weigell, Philipp

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300/fb¹ , the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running|especially if the luminosity is raised to about 5x10^35/(cm²s¹ ) as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost-effective pixel assemblies with...

  5. Insertable B-Layer integration in the ATLAS experiment and development of future 3D silicon pixel sensors

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00371528; Røhne, Ole

    This work has two distinct objectives: the development of software for the integration of the Insertable B-Layer (IBL) in the ATLAS offline software framework and the study of the performance of 3D silicon sensors produced by SINTEF for future silicon pixel detectors. The former task consists in the implementation of the IBL byte stream converter. This offline tool performs the decoding of the binary-formatted data coming from the detector into information (e.g. hit position and Time over Threshold) that is stored in a format used in the reconstruction data flow. It also encodes the information extracted from simulations into a simulated IBL byte stream. The tool has been successfully used since the beginning of the LHC Run II data taking. The experimental work on SINTEF 3D sensors was performed in the framework of the development of pixel sensors for the next generation of tracking detectors. Preliminary tests on SINTEF 3D sensors showed that the majority of these devices suffers from high leakage currents, ...

  6. Low temperature capacitive micromachined ultrasonic transducers (cMUTs) on glass substrate

    International Nuclear Information System (INIS)

    Bahette, E; Michaud, J F; Certon, D; Gross, D; Perroteau, M; Alquier, D

    2016-01-01

    The possibility of fabricating capacitive micromachined ultrasonic transducers (cMUTs) on glass substrates may open the way for new fields of application in which the transparency of the substrate is advantageous. In this study, we demonstrate that a low-temperature process can be carried out to achieve cMUTs on glass substrates. Limited to temperatures lower than 400 °C, the process is based on the use of nickel as a sacrificial layer. The cMUT electromechanical behavior is studied and the performance compared to those obtained with silicon substrates. The cMUTs fabricated on glass substrate showed performance comparable with the Si ones. A slight shift in the resonance frequency and collapse voltage was observed. It is shown that these differences arise from the residual mechanical stresses in the substrate. (paper)

  7. Low temperature capacitive micromachined ultrasonic transducers (cMUTs) on glass substrate

    Science.gov (United States)

    Bahette, E.; Michaud, J. F.; Certon, D.; Gross, D.; Perroteau, M.; Alquier, D.

    2016-11-01

    The possibility of fabricating capacitive micromachined ultrasonic transducers (cMUTs) on glass substrates may open the way for new fields of application in which the transparency of the substrate is advantageous. In this study, we demonstrate that a low-temperature process can be carried out to achieve cMUTs on glass substrates. Limited to temperatures lower than 400 °C, the process is based on the use of nickel as a sacrificial layer. The cMUT electromechanical behavior is studied and the performance compared to those obtained with silicon substrates. The cMUTs fabricated on glass substrate showed performance comparable with the Si ones. A slight shift in the resonance frequency and collapse voltage was observed. It is shown that these differences arise from the residual mechanical stresses in the substrate.

  8. High efficiency on-chip Dielectric Resonator Antennna using micromachining technology

    KAUST Repository

    Sallam, Mai O.

    2015-10-26

    In this paper, a novel cylindrical Dielectric Resonator Antenna (DRA) operating at 60 GHz is introduced. The antenna is fabricated using a high-resistivity silicon wafer. The DR is defined in the wafer using micromachining technology. The feeding network is located at the other side of the wafer. The proposed antenna is simulated using HFSS and the results are verified by measurements. The antenna radiation is mainly along the broadside direction. The measured gain, radiation efficiency, and bandwidth are 7 dBi, 74.65%, and 2.23 GHz respectively. The antenna is characterized by high polarization purity where the maximum cross-polarization is -15 dB. © 2015 IEEE.

  9. Micromachined On-Chip Dielectric Resonator Antenna Operating at 60 GHz

    KAUST Repository

    Sallam, Mai

    2015-06-01

    This paper presents a novel cylindrical Dielectric Resonator Antenna (DRA) suitable for millimeter-wave on-chip systems. The antenna was fabricated from a single high resistivity silicon wafer via micromachining technology. The new antenna was characterized using HFSS and experimentally with good agreement been found between the simulations and experiment. The proposed DRA has good radiation characteristics, where its gain and radiation efficiency are 7 dBi and 79.35%, respectively. These properties are reasonably constant over the working frequency bandwidth of the antenna. The return loss bandwidth was 2.23 GHz, which corresponds to 3.78% around 60 GHz. The antenna was primarily a broadside radiator with -15 dB cross polarization level.

  10. Review of piezoelectric micromachined ultrasonic transducers and their applications

    Science.gov (United States)

    Jung, Joontaek; Lee, Wonjun; Kang, Woojin; Shin, Eunjung; Ryu, Jungho; Choi, Hongsoo

    2017-11-01

    In recent decades, micromachined ultrasonic transducers (MUTs) have been investigated as an alternative to conventional piezocomposite ultrasonic transducers, primarily due to the advantages that microelectromechanical systems provide. Miniaturized ultrasonic systems require ultrasonic transducers integrated with complementary metal-oxide-semiconductor circuits. Hence, piezoelectric MUTs (pMUTs) and capacitive MUTs (cMUTs) have been developed as the most favorable solutions. This paper reviews the basic equations to understand the characteristics of thin-film-based piezoelectric devices and presents recent research on pMUTs, including current approaches and limitations. Methods to improve the coupling coefficient of pMUTs are also investigated, such as device structure, materials, and fabrication techniques. The device structure improvements include multielectrode pMUTs, partially clamped boundary conditions, and 3D pMUTs (curved and domed types), where the latter can provide an electromechanical coupling coefficient of up to 45%. The piezoelectric coefficient (e 31) can be increased by controlling the crystal texture (seed layer of γ-Al2O3), using single-crystal (PMN-PT) materials, or control of residual stresses (using SiO2 layer). Arrays of pMUTs can be implemented for various applications including intravascular ultrasound, fingerprint sensors, rangefinders in air, and wireless power supply systems. pMUTs are expected to be an ideal solution for applications such as mobile biometric security (fingerprint sensors) and rangefinders due to their superior power efficiency and compact size.

  11. Capacitive micromachined ultrasonic transducers (CMUTs) for photoacoustic imaging

    Science.gov (United States)

    Vaithilingam, Srikant; Wygant, Ira O.; Kuo, Paulina S.; Zhuang, Xuefeng; Oralkan, Ömer; Olcott, Peter D.; Khuri-Yakub, Butrus T.

    2006-02-01

    In photoacoustic (optoacoustic) medical imaging, short laser pulses irradiate absorbing structures found in tissue, such as blood vessels, causing brief thermal expansions that in turn generate ultrasound waves. These ultrasound waves which correspond to the optical absorption distribution were imaged using a two dimensional array of capacitive micromachined ultrasonic transducers (CMUTs). Advantages of CMUT technology for photoacoustic imaging include the ease of integration with electronics, ability to fabricate large two dimensional arrays, arrays with arbitrary geometries, wide-bandwidth arrays and high-frequency arrays. In this study, a phantom consisting of three 0.86-mm inner diameter polyethylene tubes inside a tissue mimicking material was imaged using a 16 x 16 element CMUT array. The center tube was filled with India-ink to provide optical contrast. Traditional pulse-echo data as well as photoacoustic image data were taken. 2D cross-sectional slices and 3D volume rendered images are shown. Simple array tiling was attempted, whereby a 48 x 48 element array was simulated, to illustrate the advantages of larger arrays. Finally, the sensitivity of the photoacoustics setup to the concentration of ink in the tube was also explored. For the sensitivity experiment a different phantom consisting of only one 1.14-mm inner diameter polyethylene tube inside a tissue mimicking material was used. The concentration of the ink inside the tube was varied and images were taken.

  12. Receive-Noise Analysis of Capacitive Micromachined Ultrasonic Transducers.

    Science.gov (United States)

    Bozkurt, Ayhan; Yaralioglu, G Goksenin

    2016-11-01

    This paper presents an analysis of thermal (Johnson) noise received from the radiation medium by otherwise noiseless capacitive micromachined ultrasonic transducer (CMUT) membranes operating in their fundamental resonance mode. Determination of thermal noise received by multiple numbers of transducers or a transducer array requires the assessment of cross-coupling through the radiation medium, as well as the self-radiation impedance of the individual transducer. We show that the total thermal noise received by the cells of a CMUT has insignificant correlation, and is independent of the radiation impedance, but is only determined by the mass of each membrane and the electromechanical transformer ratio. The proof is based on the analytical derivations for a simple transducer with two cells, and extended to transducers with numerous cells using circuit simulators. We used a first-order model, which incorporates the fundamental resonance of the CMUT. Noise power is calculated by integrating over the entire spectrum; hence, the presented figures are an upper bound for the noise. The presented analyses are valid for a transimpedance amplifier in the receive path. We use the analysis results to calculate the minimum detectable pressure of a CMUT. We also provide an analysis based on the experimental data to show that output noise power is limited by and comparable to the theoretical upper limit.

  13. Review of piezoelectric micromachined ultrasonic transducers and their applications

    International Nuclear Information System (INIS)

    Jung, Joontaek; Lee, Wonjun; Kang, Woojin; Shin, Eunjung; Choi, Hongsoo; Ryu, Jungho

    2017-01-01

    In recent decades, micromachined ultrasonic transducers (MUTs) have been investigated as an alternative to conventional piezocomposite ultrasonic transducers, primarily due to the advantages that microelectromechanical systems provide. Miniaturized ultrasonic systems require ultrasonic transducers integrated with complementary metal-oxide-semiconductor circuits. Hence, piezoelectric MUTs (pMUTs) and capacitive MUTs (cMUTs) have been developed as the most favorable solutions. This paper reviews the basic equations to understand the characteristics of thin-film-based piezoelectric devices and presents recent research on pMUTs, including current approaches and limitations. Methods to improve the coupling coefficient of pMUTs are also investigated, such as device structure, materials, and fabrication techniques. The device structure improvements include multielectrode pMUTs, partially clamped boundary conditions, and 3D pMUTs (curved and domed types), where the latter can provide an electromechanical coupling coefficient of up to 45%. The piezoelectric coefficient ( e 31 ) can be increased by controlling the crystal texture (seed layer of γ -Al 2 O 3 ), using single-crystal (PMN-PT) materials, or control of residual stresses (using SiO 2 layer). Arrays of pMUTs can be implemented for various applications including intravascular ultrasound, fingerprint sensors, rangefinders in air, and wireless power supply systems. pMUTs are expected to be an ideal solution for applications such as mobile biometric security (fingerprint sensors) and rangefinders due to their superior power efficiency and compact size. (topical review)

  14. Silicon plasmonics at midinfrared using silicon-insulator-silicon platform

    Science.gov (United States)

    Gamal, Rania; Shafaay, Sarah; Ismail, Yehea; Swillam, Mohamed A.

    2017-01-01

    We propose devices based on doped silicon. Doped silicon is designed to act as a plasmonic medium in the midinfrared (MIR) range. The surface plasmon frequency of the doped silicon can be tuned within the MIR range, which gives rise to useful properties in the material's dispersion. We propose various plasmonic configurations that can be utilized for silicon on-chip applications in MIR. These devices have superior performance over conventional silicon devices and provide unique functionalities such as 90-sharp degree bends, T- and X-junction splitters, and stubs. These devices are CMOS-compatible and can be easily integrated with other electronic devices. In addition, the potential for biological and environmental sensing using doped silicon nanowires is demonstrated.

  15. Integration of the End Cap TEC+ of the CMS Silicon Strip Tracker

    CERN Document Server

    Bremer, Richard; Feld, Lutz

    2008-01-01

    At the European Organization for Nuclear Research (CERN) ne ar Geneva the new proton-proton collider ring LHC and the experiments that will be operated a t this accelerator are currently being finalised. Among these experiments is the multi-purpose det ector CMS whose aim it is to discover and investigate new physical phenomena that might become ac cessible by virtue of the high center- of-mass energy and luminosity of the LHC. Two of the most inte nsively studied possibilities are the discovery of the Higgs Boson and of particles from the spectr um of supersymmetric extensions of the Standard Model. CMS is the first large experiment of high- energy particle physics whose inner tracking system is exclusively instrumented with silicon d etector modules. This tracker comprises 15 148 silicon strip modules enclosing the interaction poin t in 10–12 layers. The 1. Physikalisches Institut B of RWTH Aachen was deeply involved in the completi on of the end caps of the tracking system. The institute played a leading...

  16. Noise characterization of silicon strip detectors-comparison of sensors with and without integrated jfet source-follower.

    CERN Document Server

    Giacomini, Gabriele

    Noise is often the main factor limiting the performance of detector systems. In this work a detailed study of the noise contributions in different types of silicon microstrip sensors is carried on. We investigate three sensors with double-sided readout fabricated by different suppliers for the ALICE experiment at the CERN LHC, in addition to detectors including an integrated JFET Source-Follower as a first signal conditioning stage. The latter have been designed as an attempt at improving the performance when very long strips, obtained by gangling together several sensors, are required. After a description of the strip sensors and of their operation, the “static” characterization measurements performed on them (current and capacitance versus voltage and/or frequency) are illustrated and interpreted. Numerical device simulation has been employed as an aid in interpreting some of the measurement results. The commonly used models for expressing the noise of the detector-amplifier system in terms of its relev...

  17. In-fiber whispering-gallery-mode resonator fabricated by femtosecond laser micromachining.

    Science.gov (United States)

    Shi, Leilei; Zhu, Tao; Huang, Dongmei; Liu, Min; Deng, Ming; Huang, Wei

    2015-08-15

    An in-fiber whispering-gallery-mode resonator fabricated by femtosecond laser micromachining is demonstrated. The cylinder resonator cavity is fabricated by scanning the D-fiber cladding with infrared femtosecond pulses along a cylindrical trace with a radius of 25 μm and height of 20 μm. Quality factor on the order of 10(3) is achieved by smoothing the cavity surface with an ultrasonic cleaner, which is mainly limited by the surface roughness of several hundred nanometers. Resonant characteristics and polarization dependence of the proposed resonator are also studied in detail. Our method takes a step forward in the integration of whispering-gallery-mode resonators.

  18. Imaging and chemical surface analysis of biomolecular functionalization of monolithically integrated on silicon Mach-Zehnder interferometric immunosensors

    Energy Technology Data Exchange (ETDEWEB)

    Gajos, Katarzyna, E-mail: kasia.fornal@uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Angelopoulou, Michailia; Petrou, Panagiota [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Awsiuk, Kamil [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Kakabakos, Sotirios [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Haasnoot, Willem [RIKILT Wageningen UR, Akkermaalsbos 2, 6708 WB Wageningen (Netherlands); Bernasik, Andrzej [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Rysz, Jakub [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Marzec, Mateusz M. [Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Misiakos, Konstantinos; Raptis, Ioannis [Department of Microelectronics, Institute of Nanoscience and Nanotechnology, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Budkowski, Andrzej [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland)

    2016-11-01

    Highlights: • Optimization of probe immobilization with robotic spotter printing overlapping spots. • In-situ inspection of microstructured surfaces of biosensors integrated on silicon. • Imaging and chemical analysis of immobilization, surface blocking and immunoreaction. • Insight with molecular discrimination into step-by-step sensor surface modifications. • Optimized biofunctionalization improves sensor sensitivity and response repeatability. - Abstract: Time-of-flight secondary ion mass spectrometry (imaging, micro-analysis) has been employed to evaluate biofunctionalization of the sensing arm areas of Mach-Zehnder interferometers monolithically integrated on silicon chips for the immunochemical (competitive) detection of bovine κ-casein in goat milk. Biosensor surfaces are examined after: modification with (3-aminopropyl)triethoxysilane, application of multiple overlapping spots of κ-casein solutions, blocking with 100-times diluted goat milk, and reaction with monoclonal mouse anti-κ-casein antibodies in blocking solution. The areas spotted with κ-casein solutions of different concentrations are examined and optimum concentration providing homogeneous coverage is determined. Coverage of biosensor surfaces with biomolecules after each of the sequential steps employed in immunodetection is also evaluated with TOF-SIMS, supplemented by Atomic force microscopy and X-ray photoelectron spectroscopy. Uniform molecular distributions are observed on the sensing arm areas after spotting with optimum κ-casein concentration, blocking and immunoreaction. The corresponding biomolecular compositions are determined with a Principal Component Analysis that distinguished between protein amino acids and milk glycerides, as well as between amino acids characteristic for Mabs and κ-casein, respectively. Use of the optimum conditions (κ-casein concentration) for functionalization of chips with arrays of ten Mach-Zehnder interferometers provided on-chips assays

  19. Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

    Science.gov (United States)

    Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

    2017-06-26

    A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

  20. An All-Integrated Anode via Interlinked Chemical Bonding between Double-Shelled-Yolk-Structured Silicon and Binder for Lithium-Ion Batteries.

    Science.gov (United States)

    Liu, Yajie; Tai, Zhixin; Zhou, Tengfei; Sencadas, Vitor; Zhang, Jian; Zhang, Lei; Konstantinov, Konstantin; Guo, Zaiping; Liu, Hua Kun

    2017-11-01

    The concept of an all-integrated design with multifunctionalization is widely employed in optoelectronic devices, sensors, resonator systems, and microfluidic devices, resulting in benefits for many ongoing research projects. Here, maintaining structural/electrode stability against large volume change by means of an all-integrated design is realized for silicon anodes. An all-integrated silicon anode is achieved via multicomponent interlinking among carbon@void@silica@silicon (CVSS) nanospheres and cross-linked carboxymethyl cellulose and citric acid polymer binder (c-CMC-CA). Due to the additional protection from the silica layer, CVSS is superior to the carbon@void@silicon (CVS) electrode in terms of long-term cyclability. The as-prepared all-integrated CVSS electrode exhibits high mechanical strength, which can be ascribed to the high adhesivity and ductility of c-CMC-CA binder and the strong binding energy between CVSS and c-CMC-CA, as calculated based on density functional theory (DFT). This electrode exhibits a high reversible capacity of 1640 mA h g -1 after 100 cycles at a current density of 1 A g -1 , high rate performance, and long-term cycling stability with 84.6% capacity retention after 1000 cycles at 5 A g -1 . © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.

    2017-02-07

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  2. Integrating a Silicon Solar Cell with a Triboelectric Nanogenerator via a Mutual Electrode for Harvesting Energy from Sunlight and Raindrops.

    Science.gov (United States)

    Liu, Yuqiang; Sun, Na; Liu, Jiawei; Wen, Zhen; Sun, Xuhui; Lee, Shuit-Tong; Sun, Baoquan

    2018-03-27

    Solar cells, as promising devices for converting light into electricity, have a dramatically reduced performance on rainy days. Here, an energy harvesting structure that integrates a solar cell and a triboelectric nanogenerator (TENG) device is built to realize power generation from both sunlight and raindrops. A heterojunction silicon (Si) solar cell is integrated with a TENG by a mutual electrode of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film. Regarding the solar cell, imprinted PEDOT:PSS is used to reduce light reflection, which leads to an enhanced short-circuit current density. A single-electrode-mode water-drop TENG on the solar cell is built by combining imprinted polydimethylsiloxane (PDMS) as a triboelectric material combined with a PEDOT:PSS layer as an electrode. The increasing contact area between the imprinted PDMS and water drops greatly improves the output of the TENG with a peak short-circuit current of ∼33.0 nA and a peak open-circuit voltage of ∼2.14 V, respectively. The hybrid energy harvesting system integrated electrode configuration can combine the advantages of high current level of a solar cell and high voltage of a TENG device, promising an efficient approach to collect energy from the environment in different weather conditions.

  3. Fabrication of a high-temperature microreactor with integrated heater and sensor patterns on an ultrathin silicon membrane

    NARCIS (Netherlands)

    Tiggelaar, Roald M.; Berenschot, Johan W.; van Male, P.; Oosterbroek, R.E.; Gardeniers, Johannes G.E.; de Croon, M.H.J.M.; Schouten, J.C.; van den Berg, Albert; Elwenspoek, Michael Curt

    2005-01-01

    In this paper critical steps in the fabrication process of a microreactor for high-temperature catalytic partial oxidation gas phase reactions are evaluated. The microreactor contains a flow channel etched in silicon, capped with an ultrathin composite membrane consisting of silicon and silicon

  4. Roof-integrated amorphous silicon photovoltaic installation at the Institute for Micro-Technology; Installation photovoltaique IMT Neuchatel silicium amorphe integre dans toiture

    Energy Technology Data Exchange (ETDEWEB)

    Tscharner, R.; Shah, A.V.

    2003-07-01

    This final report for the Swiss Federal Office of Energy (SFOE) describes the 6.44 kW grid-connected photovoltaic (PV) power plant that has been in operation since 1996 at the Institute for Micro-Technology in Neuchatel, Switzerland. The PV plant, which features large-area, fully integrated modules using amorphous silicon cells was the first of its kind in Switzerland. Experience gained with the installation, which has been fully operational since its construction, as well as the power produced and efficiencies measured are presented and commented. The role of the installation as the forerunner of new, so-called 'micro-morph' thin-film solar cell technology developed at the institute is stressed. Technical details of the plant and its performance are given.

  5. Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

    Science.gov (United States)

    Rao, A. V. Narasimha; Swarnalatha, V.; Pal, P.

    2017-12-01

    Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved anisotropy between Si{111} and Si{110} planes. In the manufacturing company, high etch rate is demanded to increase the productivity that eventually reduces the cost of end product. In order to modify the etching characteristics of KOH for the micromachining of Si{110}, we have investigated the effect of hydroxylamine (NH2OH) in 20 wt% KOH solution. The concentration of NH2OH is varied from 0 to 20% and the etching is carried out at 75 °C. The etching characteristics which are studied in this work includes the etch rates of Si{110} and silicon dioxide, etched surface morphology, and undercutting at convex corners. The etch rate of Si{110} in 20 wt% KOH + 15% NH2OH solution is measured to be four times more than that of pure 20 wt% KOH. Moreover, the addition of NH2OH increases the undercutting at convex corners and enhances the etch selectivity between Si and SiO2.

  6. High-Resolution Silicon-based Particle Sensor with Integrated Amplification, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I project will deliver a breakthrough in particle-detection sensors, by integrating an amplifying junction as part of the detector topology. Focusing...

  7. High-Resolution Silicon-based Particle Sensor with Integrated Amplification Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I project will deliver a breakthrough in particle-detection sensors, by integrating an amplifying junction as part of the detector topology. Focusing...

  8. Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

    Science.gov (United States)

    Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

    2017-05-01

    Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive

  9. Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

    International Nuclear Information System (INIS)

    Ghoneim, M. T.; Hussain, M. M.

    2015-01-01

    Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures

  10. High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

    Energy Technology Data Exchange (ETDEWEB)

    Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D.; Efetov, Dmitri K.; Assefa, Solomon; Koppens, Frank H. L.; Hone, James; Englund, Dirk

    2015-11-11

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal–oxide–semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron–phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

  11. Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-08-05

    Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.

  12. Dual axis operation of a micromachined rate gyroscope

    Energy Technology Data Exchange (ETDEWEB)

    Juneau, T. [BSAC, Berkeley, CA (United States); Pisano, A.P. [Univ. California, Berkeley, CA (United States). Dept. of Mechanical Engineering; Smith, J. [Sandia National Lab., Albuquerque, NM (United States)

    1997-04-01

    Since micromachining technology has raised the prospect of fabricating high performance sensors without the associated high cost and large size, many researchers have investigated micromachined rate gyroscopes. The vast majority of research has focused on single input axis rate gyroscopes, but this paper presents work on a dual input axis micromachined rate gyroscope. The key to successful simultaneous dual axis operation is the quad symmetry of the circular oscillating rotor design. Untuned gyroscopes with mismatched modes yielded random walk as low as 10{degrees}/{radical}hour with cross sensitivity ranging from 6% to 16%. Mode frequency matching via electrostatic tuning allowed performance better than 2{degrees}/{radical}hour, but at the expense of excessive cross sensitivity.

  13. Development of Micromachine Gas Turbine for Portable Power Generation

    Science.gov (United States)

    Isomura, Kousuke; Tanaka, Shuji; Togo, Shinichi; Kanebako, Hideki; Murayama, Motohide; Saji, Nobuyoshi; Sato, Fumihiro; Esashi, Masayoshi

    Micromachine gas turbine with centrifugal impellers of 10mm diameter fabricated by 5-axis micro-milling is under development at Tohoku University, in conjunction with Ishikawajima-Harima Heavy Industries Co., Ltd. (IHI), Tohoku-Gakuin University, and Sankyo Seiki Mfg. Co., Ltd. The development is currently at the stage of proving the feasibility of the gas turbine cycle by component tests. Micro-combustors have been developed for both hydrogen and methane fuel. Over 99.9% of the combustion efficiency has been realized in both combustors and the baseline configuration of the combustor for the gas turbine is set. A compressor of 10mm diameter has been developed as a micromachined turbocharger. The performance test of the micromachined turbocharger has been started, and ran up to 566000rpm, which is approximately 65% of the design speed. Compressor performance has been successfully measured along a constant speed line at 55% of the design speed.

  14. Multi-layer enhancement to polysilicon surface-micromachining technology

    Energy Technology Data Exchange (ETDEWEB)

    Sniegowski, J.J.; Rodgers, M.S. [Sandia National Labs., Albuquerque, NM (United States). Intelligent Micromachine Dept.

    1997-10-01

    A multi-level polysilicon surface-micromachining technology consisting of 5 layers of polysilicon is presented. Surface topography and film mechanical stress are the major impediments encountered in the development of a multilayer surface-micromachining process. However, excellent mechanical film characteristics have been obtained through the use of chemical-mechanical polishing for planarization of topography and by proper sequencing of film deposition with thermal anneals. Examples of operating microactuators, geared power-transfer mechanisms, and optical elements demonstrate the mechanical advantages of construction with 5 polysilicon layers.

  15. Design and characterization of low-loss 2D grating couplers for silicon photonics integrated circuits

    Science.gov (United States)

    Lacava, C.; Carrol, L.; Bozzola, A.; Marchetti, R.; Minzioni, P.; Cristiani, I.; Fournier, M.; Bernabe, S.; Gerace, D.; Andreani, L. C.

    2016-03-01

    We present the characterization of Silicon-on-insulator (SOI) photonic-crystal based 2D grating-couplers (2D-GCs) fabricated by CEA-Leti in the frame of the FP7 Fabulous project, which is dedicated to the realization of devices and systems for low-cost and high-performance passives-optical-networks. On the analyzed samples different test structures are present, including 2D-GC connected to another 2D-GC by different waveguides (in a Mach-Zehnder like configuration), and 2D-GC connected to two separate 2D-GCs, so as to allow a complete assessment of different parameters. Measurements were carried out using a tunable laser source operating in the extended telecom bandwidth and a fiber-based polarization controlling system at the input of device-under-test. The measured data yielded an overall fiber-to-fiber loss of 7.5 dB for the structure composed by an input 2D-GC connected to two identical 2D-GCs. This value was obtained at the peak wavelength of the grating, and the 3-dB bandwidth of the 2D-GC was assessed to be 43 nm. Assuming that the waveguide losses are negligible, so as to make a worst-case analysis, the coupling efficiency of the single 2D-GC results to be equal to -3.75 dB, constituting, to the best of our knowledge, the lowest value ever reported for a fully CMOS compatible 2D-GC. It is worth noting that both the obtained values are in good agreement with those expected by the numerical simulations performed using full 3D analysis by Lumerical FDTD-solutions.

  16. Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

    NARCIS (Netherlands)

    Sakic, A.; Scholtes, T.L.M.; De Boer, W.B.; Golshani, N.; Derakhshandeh, J.; Nanver, L.K.

    2011-01-01

    An arsenic doping technique for depositing up to 40-?m-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm?3, a value that is solely

  17. An integrated optic adiabatic TE/TM mode splitter on silicon

    NARCIS (Netherlands)

    de Ridder, R.M.; Sander, A.F.M.; Driessen, A.; Fluitman, J.H.J.

    1993-01-01

    A compact integrated optic fundamental TE/TM mode splitter, based on the mode-sorting characteristics of an asymmetrical adiabatic Y junction of optical waveguides exhibiting shape birefringence, operating at 1550 nm, has been designed using the discrete sine method (DSM) and the beam propagation

  18. Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

    NARCIS (Netherlands)

    Roozeboom, F.; Narayanan, V.; Kakushima, K.; Timans, P.J.; Gusev, E.P.; Karim, Z.; Gendt, S. De

    2016-01-01

    The topics of this annual symposium continue to describe the evolution of traditional scaling in CMOS integrated circuit manufacturing (More Moore for short), combined with the opportunities from growing diversification and embedded functionality (More than Moore). Once again, the main objective was

  19. mm-Wave Wireless Communications based on Silicon Photonics Integrated Circuits

    DEFF Research Database (Denmark)

    Rommel, Simon; Heck, Martijn; Vegas Olmos, Juan José

    Hybrid photonic-wireless transmission schemes in the mm-wave frequency range are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical...

  20. Silicon Photonics Integrated Circuits for 5th Generation mm-Wave Wireless Communications

    DEFF Research Database (Denmark)

    Rommel, Simon; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

    Hybrid photonic-wireless transmission schemes in the mm-wave frequency are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical applicability...

  1. BJT-based detector on high-resistivity silicon with integrated biasing structure

    Science.gov (United States)

    Verzellesi, G.; Batignani, G.; Bettarini, S.; Boscardin, M.; Bosisio, L.; Dalla Betta, G.-F.; Giacomini, G.; Piemonte, C.

    2006-11-01

    A novel method for biasing phototransistor-based radiation detectors on high-resistivity Si is presented, that relies on the integration into the detector base of a pnp transistor acting as a current source. The proposed approach can be extended in a natural way to the biasing of npn detector arrays, allowing different detectors to be biased at the same quiescent current, by connecting all the biasing pnp transistors with a diode-connected reference transistor (integrated onto the same chip), so that they form a current-mirror circuit. Relying on two-dimensional numerical device simulations, several test structures have been designed and fabricated, including single BJT detectors and detector arrays with pnp biasing transistors connected in the current-mirror configuration. The electrical characterization of fabricated structures shows that both single detectors and detector arrays are operational and behave in good agreement with simulations, thus demonstrating the feasibility of the proposed approach.

  2. The Effect of Humidity on the Reliability of a Surface Micromachined Microengine

    Energy Technology Data Exchange (ETDEWEB)

    Dugger, M.T.; Eaton, W.P.; Irwin, L.W.; Miller, S.L.; Miller, W.M.; Smith, N.F.; Tanner, D.M.; Walraven, J.A.

    1999-02-02

    Humidity is shown to be a strong factor in the wear of rubbing surfaces in polysilicon micromachines. We demonstrate that very low humidity can lead to very high wear without a significant change in reliability. We show that the volume of wear debris generated is a function of the humidity in an air environment. As the humidity decreases, the wear debris generated increases. For the higher humidity levels, the formation of surface hydroxides may act as a lubricant. The dominant failure mechanism has been identified as wear. The wear debris has been identified as amorphous oxidized silicon. Large slivers (approximately 1 micron in length) of debris observed at the low humidity level were also amorphous oxidized silicon. Using transmission electron microscopy, we observed that the wear debris forms spherical and rod-like shapes. We compared two surface treatment processes: a fluorinated si- lane chain, (FITl) and supercritical C02 dried (SCC02). The microengines using the SCC02 process were found to be less reliable than those released with the FIX process under two humidity levels.

  3. Reverberation Reduction in Capacitive Micromachined Ultrasonic Transducers (CMUTs) by Front-face Reflectivity Minimization

    Science.gov (United States)

    Savoia, Alessandro Stuart; La Mura, Monica; Mauti, Barbara; Lamberti, Nicola; Caliano, Giosuè

    Front-face acoustic reflectivity of ultrasonic imaging transducers, due to acoustic impedance mismatch with the propagation medium, may cause reverberation phenomena during wideband pulse-echo operation. Front-face reflectivity may be reduced by promoting the transmission of the echoes, received from the medium, to the transducer backing, and by maximizing the mechanical-to-electrical energy conversion and dissipation by tuning the electrical load impedance connected to the transducer. In Capacitive Micromachined Ultrasonic Transducers (CMUTs), the energy transfer from the medium to the backing is very low due to the large impedance mismatch between the medium and the transducer substrate, typically made of silicon. Reverse Fabrication Process (RFP) makes it possible providing CMUTs with custom substrate materials, thus eliminating the original silicon microfabrication support. In this paper, we propose two methods for the front-face reflectivity reduction in RFP-CMUTs: the first one is based on the use of low-impedance, highly attenuating backing materials, and the second one is based on the maximization of the mechanoelectrical energy conversion and dissipation. We analyze the methods by finite element simulations and experimentally validate the obtained results by fabricating and characterizing single-element RFP-CMUTs provided with different backing materials and electrical loads.

  4. Anodic bonding using SOI wafer for fabrication of capacitive micromachined ultrasonic transducers

    International Nuclear Information System (INIS)

    Bellaredj, M; Bourbon, G; Walter, V; Moal, P Le; Berthillier, M

    2014-01-01

    In medical ultrasound imaging, mostly piezoelectric crystals are used as ultrasonic transducers. Capacitive micromachined ultrasonic transducers (CMUTs) introduced around 1994 have been shown to be a good alternative to conventional piezoelectric transducers in various aspects, such as sensitivity, transduction efficiency or bandwidth. This paper focuses on a fabrication process for CMUTs using anodic bonding of a silicon on insulator wafer on a glass wafer. The processing steps are described leading to a good control of the mechanical response of the membrane. This technology makes possible the fabrication of large membranes and can extend the frequency range of CMUTs to lower frequencies of operation. Silicon membranes having radii of 50, 70, 100 and 150 µm and a 1.5 µm thickness are fabricated and electromechanically characterized using an auto-balanced bridge impedance analyzer. Resonant frequencies from 0.6 to 2.3 MHz and an electromechanical coupling coefficient around 55% are reported. The effects of residual stress in the membranes and uncontrolled clamping conditions are clearly responsible for the discrepancies between experimental and theoretical values of the first resonance frequency. The residual stress in the membranes is determined to be between 90 and 110 MPa. The actual boundary conditions are between the clamped condition and the simply supported condition and can be modeled with a torsional stiffness of 2.10 −7  Nm rad –1  in the numerical model. (paper)

  5. On-chip micromachined dipole antenna with parasitic radiator for mm-wave wireless systems

    KAUST Repository

    Sallam, Mai O.

    2016-12-19

    In this paper, we present a micromachined dipole antenna with parasitic radiator. The antenna is designed for operation at 60 GHz. It consists of two Ig/2 dipole radiators fed by coplanar strips waveguide. Two slightly shorter dipoles are placed in proximity to the main radiators. They act as parasitic dipole arms which increase the bandwidth of the antenna. Two versions of the same antenna topology are presented in this paper in which one uses a high resistivity silicon substrate while the other uses a low resistivity one. The proposed antenna was optimized using HFSS and the final design was simulated using both HFSS and CST for verifying the obtained results. Both simulators are in good agreement. They show that the antenna has very good radiation characteristics where its directivity is around 7.5 dBi. The addition of the parasitic arms increased the bandwidth of the antenna from 1.3 GHz (3.62 GHz) to 4.3 GHz (7.44 GHz) when designed on high (low) resistivity silicon substrate.

  6. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  7. Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

    Energy Technology Data Exchange (ETDEWEB)

    Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

    2002-07-01

    Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a {approx}10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38.

  8. Gold nanostructure-integrated silica-on-silicon waveguide for the detection of antibiotics in milk and milk products

    Science.gov (United States)

    Ozhikandathil, Jayan; Badilescu, Simona; Packirisamy, Muthukumaran

    2012-10-01

    Antibiotics are extensively used in veterinary medicine for the treatment of infectious diseases. The use of antibiotics for the treatment of animals used for food production raised the concern of the public and a rapid screening method became necessary. A novel approach of detection of antibiotics in milk is reported in this work by using an immunoassay format and the Localized Surface Plasmon Resonance property of gold. An antibiotic from the penicillin family that is, ampicillin is used for testing. Gold nanostructures deposited on a glass substrate by a novel convective assembly method were heat-treated to form a nanoisland morphology. The Au nanostructures were functionalized and the corresponding antibody was absorbed from a solution. Solutions with known concentrations of antigen (antibiotics) were subsequently added and the spectral changes were monitored step by step. The Au LSPR band corresponding to the nano-island structure was found to be suitable for the detection of the antibody antigen interaction. The detection of the ampicillin was successfully demonstrated with the gold nano-islands deposited on glass substrate. This process was subsequently adapted for the integration of gold nanostructures on the silica-on-silicon waveguide for the purpose of detecting antibiotics.

  9. Development of a focused ion beam micromachining system

    Energy Technology Data Exchange (ETDEWEB)

    Pellerin, J.G.; Griffis, D.; Russell, P.E.

    1988-12-01

    Focused ion beams are currently being investigated for many submicron fabrication and analytical purposes. An FIB micromachining system consisting of a UHV vacuum system, a liquid metal ion gun, and a control and data acquisition computer has been constructed. This system is being used to develop nanofabrication and nanomachining techniques involving focused ion beams and scanning tunneling microscopes.

  10. A batch process micromachined thermoelectric energy harvester: Fabrication and characterization

    NARCIS (Netherlands)

    Su, J.; Leonov, V.; Goedbloed, M.; Andel, Y. van; Nooijer, M.C.de; Elfrink, R.; Wang, Z.; Vullers, R.J.M.

    2010-01-01

    Micromachined thermopiles are considered as a cost-effective solution for energy harvesters working at a small temperature difference and weak heat flows typical for, e.g., the human body. They can be used for powering autonomous wireless sensor nodes in a body area network. In this paper, a

  11. Modeling Grinding Processes as Micro-Machining Operation ...

    African Journals Online (AJOL)

    A computational based model for surface grinding process as a micro-machined operation has been developed. In this model, grinding forces are made up of chip formation force and sliding force. Mathematical expressions for Modeling tangential grinding force and normal grinding force were obtained. The model was ...

  12. Monitoring of yeast cell concentration using a micromachined impedance sensor

    NARCIS (Netherlands)

    Krommenhoek, E.E.; Gardeniers, Johannes G.E.; Bomer, Johan G.; van den Berg, Albert; Li, X.; Ottens, M.; van der Wielen, L.A.M.; van Dedem, G.W.K.; van Leeuwen, M.; van Gulik, W.M.; Heijnen, J.J.

    2005-01-01

    The paper describes the design, modelling and experimental characterization of a micromachined impedance sensor for on-line monitoring of the viable yeast cell concentration (biomass) in a miniaturized cell assay. Measurements in a Saccharomyces cerevisiae cell culture show that the permittivity of

  13. Growth of linked silicon/carbon nanospheres on copper substrate as integrated electrodes for Li-ion batteries.

    Science.gov (United States)

    Zhang, Zailei; Wang, Yanhong; Tan, Qiangqiang; Li, Dan; Chen, Yunfa; Zhong, Ziyi; Su, Fabing

    2014-01-07

    We report the growth of linked silicon/carbon (Si/C) nanospheres on Cu substrate as an integrated anode for Li-ion batteries. The Si/C nanospheres were synthesized by a catalytic chemical vapor deposition (CCVD) on Cu substrate as current collector using methyltrichlorosilane as precursor, a cheap by-product of the organosilane industry. The samples were characterized by X-ray diffraction, transmission electron microscopy, scanning electron microscopy, thermal gravimetry, Raman spectroscopy, nitrogen adsorption, inductively coupled plasma optical emission spectrometry, and X-ray photoelectron spectroscopy. It was found that the linked Si/C nanospheres with a diameter of 400-500 nm contain Si, Cu(x)Si, and Cu nanocrystals, which are highly dispersed in the amorphous carbon nanospheres. A CCVD mechanism was tentatively proposed, in which the evaporated Cu atoms play a critical role to catalytically grown Si nanocrystals embedded within linked Si/C nanospheres. The electrochemical measurement shows that these Si/C nanospheres delivered a capacity of 998.9, 713.1, 320.6, and 817.8 mA h g(-1) at 50, 200, 800, and 50 mA g(-1) respectively after 50 cycles, much higher than that of commercial graphite anode. This is because the amorphous carbon, Cu(x)Si, and Cu in the Si/C nanospheres could buffer the volume change of Si nanocrystals during the Li insertion and extraction reactions, thus hindering the cracking or crumbling of the electrode. Furthermore, the incorporation of conductive Cu(x)Si and Cu nanocrystals and the integration of active electrode materials with Cu substrate may improve the electrical conductivity from the current collector to individual Si active particles, resulting in a remarkably enhanced reversible capacity and cycling stability. The work will be helpful in the fabrication of low cost binder-free Si/C anode materials for Li-ion batteries.

  14. Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide

    Science.gov (United States)

    Weng, M. H.; Clark, D. T.; Wright, S. N.; Gordon, D. L.; Duncan, M. A.; Kirkham, S. J.; Idris, M. I.; Chan, H. K.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

    2017-05-01

    A high manufacturing readiness level silicon carbide (SiC) CMOS technology is presented. The unique process flow enables the monolithic integration of pMOS and nMOS transistors with passive circuit elements capable of operation at temperatures of 300 °C and beyond. Critical to this functionality is the behaviour of the gate dielectric and data for high temperature capacitance-voltage measurements are reported for SiO2/4H-SiC (n and p type) MOS structures. In addition, a summary of the long term reliability for a range of structures including contact chains to both n-type and p-type SiC, as well as simple logic circuits is presented, showing function after 2000 h at 300 °C. Circuit data is also presented for the performance of digital logic devices, a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. A high temperature micro-oven system has been utilised to enable the high temperature testing and stressing of units assembled in ceramic dual in line packages, including a high temperature small form-factor SiC based bridge leg power module prototype, operated for over 1000 h at 300 °C. The data presented show that SiC CMOS is a key enabling technology in high temperature integrated circuit design. In particular it provides the ability to realise sensor interface circuits capable of operating above 300 °C, accommodate shifts in key parameters enabling deployment in applications including automotive, aerospace and deep well drilling.

  15. Photoacoustic CO2 sensor system: design and potential for miniaturization and integration in silicon

    Science.gov (United States)

    Huber, J.; Wöllenstein, J.

    2015-05-01

    The detection of CO2 indoors has a large impact on today's sensor market. The ambient room climate is important for human health and wellbeing. The CO2 concentration is a main indicator for indoor climate and correlates with the number of persons inside a room. People in Europe spend more than 90% of their time indoors. This leads to a high demand for miniaturized and energy efficient CO2 sensors. To realize small and energy-efficient mass-market sensors, we develop novel miniaturized photoacoustic sensor systems with optimized design for real-time and selective CO2 detection. The sensor system consists of two chambers, a measurement and a detection chamber. The detection chamber consists of an integrated pressure sensor under special gas atmosphere. As pressure sensor we use a commercially available cell phone microphone. We describe a possible miniaturization process of the developed system by regarding the possibility of integration of all sensor parts. The system is manufactured in precision mechanics with IR-optical sapphire windows as optical connections. During the miniaturization process the sapphire windows are replaced by Si chips with a special IR anti-reflection coating. The developed system is characterized in detail with gas measurements and optical transmission investigations. The results of the characterization process offer a high potential for further miniaturization with high capability for mass market applications.

  16. Aluminum nitride electro-optic phase shifter for backend integration on silicon.

    Science.gov (United States)

    Zhu, Shiyang; Lo, Guo-Qiang

    2016-06-13

    An AlN electro-optic phase shifter with a parallel plate capacitor structure is fabricated on Si using the back-end complementary metal-oxide-semiconductor technology, which is feasible for multilayer photonics integration. The modulation efficiency (Vπ⋅Lπ product) measured from the fabricated waveguide-ring resonators and Mach-Zehnder Interferometer (MZI) modulators near the 1550-nm wavelength is ∼240 V⋅cm for the transverse electric (TE) mode and ∼320 V⋅cm for the transverse magnetic (TM) mode, from which the Pockels coefficient of the deposited AlN is deduced to be ∼1.0 pm/V for both TE and TM modes. The methods for further modulation efficiency improvement are addressed.

  17. III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Ringel, Steven [The Ohio State Univ., Columbus, OH (United States); Carlin, John A [The Ohio State Univ., Columbus, OH (United States); Grassman, Tyler [The Ohio State Univ., Columbus, OH (United States)

    2018-04-17

    This FPACE project was motivated by the need to establish the foundational pathway to achieve concentrator solar cell efficiencies greater than 50%. At such an efficiency, DOE modeling projected that a III-V CPV module cost of $0.50/W or better could be achieved. Therefore, the goal of this project was to investigate, develop and advance a III-V/Si mulitjunction (MJ) CPV technology that can simultaneously address the primary cost barrier for III-V MJ solar cells while enabling nearly ideal MJ bandgap profiles that can yield efficiencies in excess of 50% under concentrated sunlight. The proposed methodology was based on use of our recently developed GaAsP metamorphic graded buffer as a pathway to integrate unique GaAsP and Ga-rich GaInP middle and top junctions having bandgaps that are adjustable between 1.45 – 1.65 eV and 1.9 – 2.1 eV, respectively, with an underlying, 1.1 eV active Si subcell/substrate. With this design, the Si can be an active component sub-cell due to the semi-transparent nature of the GaAsP buffer with respect to Si as well as a low-cost alternative substrate that is amenable to scaling with existing Si foundry infrastructure, providing a reduction in materials cost and a low cost path to manufacturing at scale. By backside bonding of a SiGe, a path to exceed 50% efficiency is possible. Throughout the course of this effort, an expansive range of new understanding was achieved that has stimulated worldwide efforts in III-V/Si PV R&D that spanned materials development, metamorphic device optimization, and complete III-V/Si monolithic integration. Highlights include the demonstration of the first ideal GaP/Si interfaces grown by industry-standard MOCVD processes, the first high performance metamorphic tunnel junctions designed for III-V/Si integration, record performance of specific metamorphic sub-cell designs, the first fully integrated GaInP/GaAsP/Si double (1.7 eV/1.1 eV) and triple (1.95 eV/1.5 eV/1.1 eV) junction solar cells, the first

  18. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  19. Investigation of properties of novel silicon pixel assemblies employing thin n-in-p sensors and 3D-integration

    Energy Technology Data Exchange (ETDEWEB)

    Weigell, Philipp

    2013-01-15

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300 fb{sup -1}, the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running - especially if the luminosity is raised to about 5 x 10{sup 35} cm{sup -2}s{sup -1} as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost effective pixel assemblies with a minimal material budget, a larger active area fraction as compared to the current detectors, and a higher granularity. Furthermore, the assemblies must be able to withstand received fluences up to 2 . 10{sup 16} n{sub eq}/cm{sup 2}. A new pixel assembly concept answering the challenges posed by the high instantaneous luminosities is investigated in this thesis. It employs five novel technologies, namely n-in-p pixel sensors, thin pixel sensors, slim edges with or without implanted sensor sides, and 3D-integration incorporating a new interconnection technology, named Solid Liquid InterDiffusion (SLID) as well as Inter-Chip-Vias (ICVs). n-in-p sensors are cost-effective, since they only need patterned processing on one side. Their performance before and after irradiation is investigated and compared to results obtained with currently used n-in-n sensors. Reducing the thickness of the sensors lowers the amount of multiple scattering

  20. Investigation of properties of novel silicon pixel assemblies employing thin n-in-p sensors and 3D-integration

    International Nuclear Information System (INIS)

    Weigell, Philipp

    2013-01-01

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300 fb -1 , the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running - especially if the luminosity is raised to about 5 x 10 35 cm -2 s -1 as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost effective pixel assemblies with a minimal material budget, a larger active area fraction as compared to the current detectors, and a higher granularity. Furthermore, the assemblies must be able to withstand received fluences up to 2 . 10 16 n eq /cm 2 . A new pixel assembly concept answering the challenges posed by the high instantaneous luminosities is investigated in this thesis. It employs five novel technologies, namely n-in-p pixel sensors, thin pixel sensors, slim edges with or without implanted sensor sides, and 3D-integration incorporating a new interconnection technology, named Solid Liquid InterDiffusion (SLID) as well as Inter-Chip-Vias (ICVs). n-in-p sensors are cost-effective, since they only need patterned processing on one side. Their performance before and after irradiation is investigated and compared to results obtained with currently used n-in-n sensors. Reducing the thickness of the sensors lowers the amount of multiple scattering within the tracking system and leads

  1. Intelligent Microsystems: Keys to the Next Silicon Revolution

    Energy Technology Data Exchange (ETDEWEB)

    MCWHORTER,PAUL J.

    1999-10-20

    Paul McWhorter, Deputy Director for of the Microsystems Center at Sandia National Laboratories, discusses the potential of surface micromachining. A vision of the possibilities of intelligent Microsystems for the future is presented along with descriptions of several possible applications. Applications that are just around the corner and some that maybe quite a ways down the road but have a clear development path to their realization. Microsystems will drive the next silicon revolution.

  2. Monolithic CMUT-on-CMOS integration for intravascular ultrasound applications.

    Science.gov (United States)

    Zahorian, Jaime; Hochman, Michael; Xu, Toby; Satir, Sarp; Gurun, Gokce; Karaman, Mustafa; Degertekin, F Levent

    2011-12-01

    One of the most important promises of capacitive micromachined ultrasonic transducer (CMUT) technology is integration with electronics. This approach is required to minimize the parasitic capacitances in the receive mode, especially in catheter-based volumetric imaging arrays, for which the elements must be small. Furthermore, optimization of the available silicon area and minimized number of connections occurs when the CMUTs are fabricated directly above the associated electronics. Here, we describe successful fabrication and performance evaluation of CMUT arrays for intravascular imaging on custom-designed CMOS receiver electronics from a commercial IC foundry. The CMUT-on-CMOS process starts with surface isolation and mechanical planarization of the CMOS electronics to reduce topography. The rest of the CMUT fabrication is achieved by modifying a low-temperature micromachining process through the addition of a single mask and developing a dry etching step to produce sloped sidewalls for simple and reliable CMUT-to-CMOS interconnection. This CMUT-to-CMOS interconnect method reduced the parasitic capacitance by a factor of 200 when compared with a standard wire-bonding method. Characterization experiments indicate that the CMUT-on-CMOS elements are uniform in frequency response and are similar to CMUTs simultaneously fabricated on standard silicon wafers without electronics integration. Ex- periments on a 1.6-mm-diameter dual-ring CMUT array with a center frequency of 15 MHz show that both the CMUTs and the integrated CMOS electronics are fully functional. The SNR measurements indicate that the performance is adequate for imaging chronic total occlusions located 1 cm from the CMUT array.

  3. Corrosion of silicon integrated circuits and lifetime predictions in implantable electronic devices

    Science.gov (United States)

    Vanhoestenberghe, A.; Donaldson, N.

    2013-06-01

    Corrosion is a prime concern for active implantable devices. In this paper we review the principles underlying the concepts of hermetic packages and encapsulation, used to protect implanted electronics, some of which remain widely overlooked. We discuss how technological advances have created a need to update the way we evaluate the suitability of both protection methods. We demonstrate how lifetime predictability is lost for very small hermetic packages and introduce a single parameter to compare different packages, with an equation to calculate the minimum sensitivity required from a test method to guarantee a given lifetime. In the second part of this paper, we review the literature on the corrosion of encapsulated integrated circuits (ICs) and, following a new analysis of published data, we propose an equation for the pre-corrosion lifetime of implanted ICs, and discuss the influence of the temperature, relative humidity, encapsulation and field-strength. As any new protection will be tested under accelerated conditions, we demonstrate the sensitivity of acceleration factors to some inaccurately known parameters. These results are relevant for any application of electronics working in a moist environment. Our comparison of encapsulation and hermetic packages suggests that both concepts may be suitable for future implants.

  4. Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

    Directory of Open Access Journals (Sweden)

    Jaber Derakhshandeh

    2011-12-01

    Full Text Available An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm−3, a value that is solely limited by the cleanness of the epitaxial reactor chamber. To ensure such a low doping concentration, first an As-doped Si seed layer is grown with a concentration of 1016 to 1017 cm−3, after which the dopant gas arsine is turned off and a thick lightly-doped epi-layer is deposited. The final doping in the thick epi-layer relies on the segregation and incorporation of As from the seed layer, and it also depends on the final thickness of the layer, and the exact growth cycles. The obtained epi-layers exhibit a low density of stacking faults, an over-the-wafer doping uniformity of 3.6%, and a lifetime of generated carriers of more than 2.5 ms. Furthermore, the implementation of a segmented photodiode electron detector is demonstrated, featuring a 30 pF capacitance and a 90 Ω series resistance for a 7.6 mm2 anode area.

  5. Performance prediction for silicon photonics integrated circuits with layout-dependent correlated manufacturing variability.

    Science.gov (United States)

    Lu, Zeqin; Jhoja, Jaspreet; Klein, Jackson; Wang, Xu; Liu, Amy; Flueckiger, Jonas; Pond, James; Chrostowski, Lukas

    2017-05-01

    This work develops an enhanced Monte Carlo (MC) simulation methodology to predict the impacts of layout-dependent correlated manufacturing variations on the performance of photonics integrated circuits (PICs). First, to enable such performance prediction, we demonstrate a simple method with sub-nanometer accuracy to characterize photonics manufacturing variations, where the width and height for a fabricated waveguide can be extracted from the spectral response of a racetrack resonator. By measuring the spectral responses for a large number of identical resonators spread over a wafer, statistical results for the variations of waveguide width and height can be obtained. Second, we develop models for the layout-dependent enhanced MC simulation. Our models use netlist extraction to transfer physical layouts into circuit simulators. Spatially correlated physical variations across the PICs are simulated on a discrete grid and are mapped to each circuit component, so that the performance for each component can be updated according to its obtained variations, and therefore, circuit simulations take the correlated variations between components into account. The simulation flow and theoretical models for our layout-dependent enhanced MC simulation are detailed in this paper. As examples, several ring-resonator filter circuits are studied using the developed enhanced MC simulation, and statistical results from the simulations can predict both common-mode and differential-mode variations of the circuit performance.

  6. A monolithic lead sulfide-silicon MOS integrated-circuit structure

    Science.gov (United States)

    Jhabvala, M. D.; Barrett, J. R.

    1982-01-01

    A technique is developed for directly integrating infrared photoconductive PbS detector material with MOS transistors. A layer of chromium, instead of aluminum, is deposited followed by a gold deposition in order to ensure device survival during the chemical deposition of the PbS. Among other devices, a structure was fabricated and evaluated in which the PbS was directly coupled to the gate of a PMOS. The external bias, load, and source resistors were connected and the circuit was operated as a source-follower amplifier. Radiometric evaluations were performed on a variety of different MOSFETs of different geometry. In addition, various detector elements were simultaneously fabricated to demonstrate small element capability, and it was shown that elements of 25 x 25 microns could easily be fabricated. Results of room temperature evaluations using a filtered 700 K black body source yielded a detectivity at peak wavelength of 10 to the 11th cm (root Hz)/W at 100 Hz chopping frequency.

  7. Fly's proprioception-inspired micromachined strain-sensing structure: idea, design, modeling and simulation, and comparison with experimental results

    Science.gov (United States)

    Wicaksono, D. H. B.; Zhang, L.-J.; Pandraud, G.; French, P. J.; Vincent, J. F. V.

    2006-04-01

    A new strain-sensing structure inspired from insect's (especially the Fly) propricoception sensor is devised. The campaniform sensillum is a strain-sensing microstructure with very high sensitivity despite its small dimension (diameter ~10 µm in a relatively stiff material of insect's exocuticle (E = ~109 Pa). Previous work shows that the high sensitivity of this structure towards strain is due to its membrane-in-recess- and strainconcentrating- hole- features. Based on this inspiration, we built similar structure using silicon micromachining technology. Then a simple characterisation setup was devised. Here, we present briefly, finite-element modeling and simulation based on this actual sample preparation for the characterisation. As comparison and also to understand mechanical features responsible for the strain-sensitivity, we performed the modeling on different mechanical structures: bulk chunk, blind-hole, thorugh-hole, surface membrane, and membrane-in-recess. The actual experimental characterisation was performed previously using optical technique to membranein- recess micromachined Si structure. The FEM simulation results confirm that the bending stress and strain are concentrated in the hole-vicinity. The membrane inside the hole acts as displacement transducer. The FEM is in conformity with previous analytical results, as well as the optical characterisation result. The end goal is to build a new type MEMS strain sensor.

  8. The significance of strength of silicon carbide for the mechanical integrity of coated fuel particles for HTRs

    International Nuclear Information System (INIS)

    Bongartz, K.; Scheer, A.; Schuster, H.; Taeuber, K.

    1975-01-01

    Silicon carbide (SiC) and pyrocarbon are used as coating material for the HTR fuel particles. The PyC shell having a certain strength acts as a pressure vessel for the fission gases whereas the SiC shell has to retain the solid fission products in the fuel kernel. For measuring the strength of coating material the so-called Brittle Ring Test was developed. Strength and Young's modulus can be measured simultaneously with this method on SiC or PyC rings prepared out of the coating material of real fuel particles. The strength measured on the ring under a certain stress distribution which is characteristic for this method is transformed with the aid of the Weibull formalism for brittle fracture into the equivalent strength of the spherical coating shell on the fuel particle under uniform stress caused by the fission gas pressure. The values measured for the strength of the SiC were high (400-700MN/m 2 ), it could therefore be assumed that a SiC layer might contribute significantly also to the mechanical strength of the fuel coating. This assumption was confirmed by an irradiation test on coated particles with PyC-SiC-PyC coatings. There were several particles with all PyC layers broken during the irradiation, whereas the SiC layers remained intact having to withstand the fission gas pressure alone. This fact can only be explained assuming that the strength of the SiC is within the range of the values measured with the brittle ring test. The result indicates that, in optimising the coating of a fuel particle, the PyC layers of a multilayer coating should be considered alone as prospective layers for the SiC. The SiC shell, besides acting as a fission product barrier, is then also responsible for the mechanical integrity of the particle

  9. Rotating Circular Micro-Platform with Integrated Waveguides and Latching Arm for Reconfigurable Integrated Optics

    Directory of Open Access Journals (Sweden)

    Jonathan Briere

    2017-12-01

    Full Text Available This work presents a laterally rotating micromachined platform integrated under optical waveguides to control the in-plane propagation direction of light within a die to select one of multiple outputs. The platform is designed to exhibit low constant optical losses throughout the motion range and is actuated electrostatically using an optimized circular comb drive. An angular motion of ±9.5° using 180 V is demonstrated. To minimize the optical losses between the moving and fixed parts, a gap-closing mechanism is implemented to reduce the initial air gap to submicron values. A latch structure is implemented to hold the platform in place with a resolution of 0.25° over the entire motion range. The platform was integrated with silicon nitride waveguides to create a crossbar switch and preliminary optical measurements are reported. In the bar state, the loss was measured to be 14.8 dB with the gap closed whereas in the cross state it was 12.2 dB. To the authors’ knowledge, this is the first optical switch based on a rotating microelectromechanical device with integrated silicon nitride waveguides reported to date.

  10. A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer.

    Science.gov (United States)

    Krishnamoorthy, A V; Zheng, X; Feng, D; Lexau, J; Buckwalter, J F; Thacker, H D; Liu, F; Luo, Y; Chang, E; Amberg, P; Shubin, I; Djordjevic, S S; Lee, J H; Lin, S; Liang, H; Abed, A; Shafiiha, R; Raj, K; Ho, R; Asghari, M; Cunningham, J E

    2014-05-19

    We demonstrate the first germanium-silicon C-band electro-absorption based waveguide modulator array and echelle-grating-based silicon wavelength multiplexer integrated with a digital CMOS driver circuit. A 9-channel, 10Gbps SiGe electro-absorption wavelength-multiplexed modulator array consumed a power of 5.8mW per channel while being modulated at 10.25Gbps by 40nm CMOS drivers delivering peak-to-peak voltage swings of 2V, achieving a modulation energy-efficiency of ~570fJ/bit including drivers. Performance up to 25Gbps on a single-channel SiGe modulator and CMOS driver is also reported.

  11. Condensation of sodium on a micromachined surface for AMTEC

    International Nuclear Information System (INIS)

    Crowley, C.J.; Izenson, M.G.

    1993-01-01

    A novel condenser component is being developed to enable Alkali Metal Thermal to Electric Conversion (AMTEC) technology to achieve two critical goals: (1) optimization of conversion efficiency and (2) microgravity fluid management. The first goal is achieved by minimizing parasitic radiation heat transfer losses for condensers with a large view factor to the high-temperature β double-prime-alumina surface. The condenser geometry includes a specially designed, micromachined surface where large capillary forces are used to manage the fluid distribution to accomplish the second goal. We present and discuss the results of separate effects experiments investigating the wetting and condensation behavior of sodium on this capillary surface. Test results show that the micromachined surface maintains a smooth, high reflective film of liquid sodium on the surface, which implies reduced parasitic losses and increased conversion efficiencies in AMTEC cells. Accomplishing this in an adverse gravity gradient demonstrates the potential for management of the fluid even under spacecraft acceleration conditions

  12. Artificial intelligence: Collective behaviors of synthetic micromachines

    Science.gov (United States)

    Duan, Wentao

    Synthetic nano- and micromotors function through the conversion of chemical free energy or forms of energy into mechanical motion. Ever since the first reports, such motors have been the subject of growing interest. In addition to motility in response to gradients, these motors interact with each other, resulting in emergent collective behavior like schooling, exclusion, and predator-prey. However, most of these systems only exhibit a single type of collective behavior in response to a certain stimuli. The research projects in the disseratation aim at designing synthetic micromotors that can exhibit transition between various collective behaviors in response to different stimuli, as well as quantitative understanding on the pairwise interaction and propulsion mechanism of such motors. Chapter 1 offers an overview on development of synthetic micromachines. Interactions and collective behaviors of micromotors are also summarized and included. Chapter 2 presents a silver orthophosphate microparticle system that exhibits collective behaviors. Transition between two collective patterns, clustering and dispersion, can be triggered by shift in chemical equilibrium upon the addition or removal of ammonia, in response to UV light, or under two orthogonal stimuli (UV and acoustic field) and powering mechanisms. The transitions can be explained by the self-diffusiophoresis mechanism resulting from either ionic or neutral solute gradients. Potential applications of the reported system in logic gates, microscale pumping, and hierarchical assembly have been demonstrated. Chapter 3 introduces a self-powered oscillatory micromotor system in which active colloids form clusters whose size changes periodically. The system consists of an aqueous suspension of silver orthophosphate particles under UV radiation, in the presence of a mixture of glucose and hydrogen peroxide. The colloid particles first attract with each other to form clusters. After a lag time of around 5min, chemical

  13. High-speed Laser Micromachining with Copper Bromide Laser

    OpenAIRE

    Balchev, Ivaylo I.; Minkovski, Nikolai I.; Kostadinov, Ivan K.; Sabotinov, Nikola V.

    2006-01-01

    The application of the copper bromide (CuBr) laser as an attractive tool in the micro-machining of different materials has been demonstrated. High-quality drilling by trepanning and precision cutting was established on several materials with a negligible heat-affected zone (HAZ). That good performance was a result of the combination of high power visible radiation, short pulses, and close to the diffraction-limited laser beam quality with high-speed galvo scanner beam steering.

  14. High lane density slab-gel electrophoresis using micromachined instrumentation.

    Science.gov (United States)

    Papautsky, I; Mohanty, S; Weiss, R; Frazier, A B

    2001-10-01

    In this paper, micromachined pipette arrays (MPAs) and microcombs were studied as a means of enabling high lane density gel electrophoresis. The MPA provide a miniaturized format to interface sub-microliter volumes of samples between macroscale sample preparation formats and microscale biochemical analysis systems. The microcombs provide a means of creating sample loading wells in the gel material on the same center-to-center spacing as the MPAs. Together, the two micromachined instruments provide an alternative to current combs and pipetting technologies used for creating sample loading wells and sample delivery in gel electrophoresis systems. Using three designs for the microcomb-MPA pair, center-to-center spacings of 1.0 mm, 500 microm, and 250 microm are studied. The results demonstrate an approximate 10-fold increase in lane density and a 10-fold reduction in sample size from 5 microL to 500 pL. As a result, the number of theoretical plates has increased 2.5-fold, while system resolution has increased 1.5-fold over the conventional agarose gel systems. An examination of changes in resolution across the width of individual separation lanes in both systems revealed dependence in the case of the conventional gels and no dependence for the gels loaded with the micromachined instrumentation.

  15. PECVD low stress silicon nitride analysis and optimization for the fabrication of CMUT devices

    International Nuclear Information System (INIS)

    Bagolini, Alvise; Picciotto, Antonino; Boscardin, Maurizio; Bellutti, Pierluigi; Savoia, Alessandro Stuart; Caliano, Giosuè; Lamberti, Nicola

    2015-01-01

    Two technological options to achieve a high deposition rate, low stress plasma-enhanced chemical vapor deposition (PECVD) silicon nitride to be used in capacitive micromachined ultrasonic transducers (CMUT) fabrication are investigated and presented. Both options are developed and implemented on standard production line PECVD equipment in the framework of a CMUT technology transfer from R and D to production. A tradeoff between deposition rate, residual stress and electrical properties is showed. The first option consists in a double layer of silicon nitride with a relatively high deposition rate of ∼100 nm min −1 and low compressive residual stress, which is suitable for the fabrication of the thick nitride layer used as a mechanical support of the CMUTs. The second option involves the use of a mixed frequency low-stress silicon nitride with outstanding electrical insulation capability, providing improved mechanical and electrical integrity of the CMUT active layers. The behavior of the nitride is analyzed as a function of deposition parameters and subsequent annealing. The nitride layer characterization is reported in terms of interfaces density influence on residual stress, refractive index, deposition rate, and thickness variation both as deposited and after thermal treatment. A sweet spot for stress stability is identified at an interfaces density of 0.1 nm −1 , yielding 87 MPa residual stress after annealing. A complete CMUT device fabrication is reported using the optimized nitrides. The CMUT performance is tested, demonstrating full functionality in ultrasound imaging applications and an overall performance improvement with respect to previous devices fabricated with non-optimized silicon nitride. (paper)

  16. PECVD low stress silicon nitride analysis and optimization for the fabrication of CMUT devices

    Science.gov (United States)

    Bagolini, Alvise; Savoia, Alessandro Stuart; Picciotto, Antonino; Boscardin, Maurizio; Bellutti, Pierluigi; Lamberti, Nicola; Caliano, Giosuè

    2015-01-01

    Two technological options to achieve a high deposition rate, low stress plasma-enhanced chemical vapor deposition (PECVD) silicon nitride to be used in capacitive micromachined ultrasonic transducers (CMUT) fabrication are investigated and presented. Both options are developed and implemented on standard production line PECVD equipment in the framework of a CMUT technology transfer from R & D to production. A tradeoff between deposition rate, residual stress and electrical properties is showed. The first option consists in a double layer of silicon nitride with a relatively high deposition rate of ~100 nm min-1 and low compressive residual stress, which is suitable for the fabrication of the thick nitride layer used as a mechanical support of the CMUTs. The second option involves the use of a mixed frequency low-stress silicon nitride with outstanding electrical insulation capability, providing improved mechanical and electrical integrity of the CMUT active layers. The behavior of the nitride is analyzed as a function of deposition parameters and subsequent annealing. The nitride layer characterization is reported in terms of interfaces density influence on residual stress, refractive index, deposition rate, and thickness variation both as deposited and after thermal treatment. A sweet spot for stress stability is identified at an interfaces density of 0.1 nm-1, yielding 87 MPa residual stress after annealing. A complete CMUT device fabrication is reported using the optimized nitrides. The CMUT performance is tested, demonstrating full functionality in ultrasound imaging applications and an overall performance improvement with respect to previous devices fabricated with non-optimized silicon nitride.

  17. Double-section curvature tunable functional actuator with micromachined buckle and grid wire for electricity delivery

    International Nuclear Information System (INIS)

    Feng, Guo-Hua; Hou, Sheng-You

    2015-01-01

    This paper presents an ionic polymer metal composite (IPMC)-driven tentacle-like biocompatible flexible actuator with double-section curvature tunability. This actuator, possessing an embedded electrical transmission ability that mimics skeletal muscle nerves in the human body, affords versatile device functions. Novel micromachined copper buckles and grid wires are fabricated and their superiority in electricity delivery and driving the IPMC component with less flexural rigidity is demonstrated. In addition, soft conductive wires realized on a polydimethylsiloxane structure function as electrical signal transmitters. A light-emitting diode integrated with the developed actuator offers directional guiding light ability while the actuator performs a snake-like motion. The electrical conductivity and Young’s modulus of the key actuator components are investigated, and flexural rigidity and dynamic behavior analyses of the actuator under electrical manipulation are elaborated. (paper)

  18. Double-section curvature tunable functional actuator with micromachined buckle and grid wire for electricity delivery

    Science.gov (United States)

    Feng, Guo-Hua; Hou, Sheng-You

    2015-09-01

    This paper presents an ionic polymer metal composite (IPMC)-driven tentacle-like biocompatible flexible actuator with double-section curvature tunability. This actuator, possessing an embedded electrical transmission ability that mimics skeletal muscle nerves in the human body, affords versatile device functions. Novel micromachined copper buckles and grid wires are fabricated and their superiority in electricity delivery and driving the IPMC component with less flexural rigidity is demonstrated. In addition, soft conductive wires realized on a polydimethylsiloxane structure function as electrical signal transmitters. A light-emitting diode integrated with the developed actuator offers directional guiding light ability while the actuator performs a snake-like motion. The electrical conductivity and Young’s modulus of the key actuator components are investigated, and flexural rigidity and dynamic behavior analyses of the actuator under electrical manipulation are elaborated.

  19. High frequency ultrasonic imaging using thermal mechanical noise recorded on capacitive micromachined transducer arrays

    Science.gov (United States)

    Lani, Shane; Satir, Sarp; Gurun, Gokce; Sabra, Karim G.; Levent Degertekin, F.

    2011-11-01

    The cross-correlation of diffuse thermal-mechanical noise recorded by two sensors yields an estimate of the ultrasonic waves propagating between them. We used this approach at high frequencies (1-30 MHz) on a capacitive micromachined ultrasonic transducer (CMUT) ring array (d = 725 μm), monolithically integrated with low noise complementary metal oxide semiconductor electronics. The thermal-mechanical noise cross-correlations between the CMUT array elements in immersion reveal both evanescent surface waves (below 10 MHz) and waves propagating primarily in the fluid (above 10 MHz). These propagating waves may allow passive imaging of scatterers closer to the array as compared to conventional pulse-echo systems, providing potentially higher resolution.

  20. Deep Tissue Photoacoustic Imaging Using a Miniaturized 2-D Capacitive Micromachined Ultrasonic Transducer Array

    Science.gov (United States)

    Kothapalli, Sri-Rajasekhar; Ma, Te-Jen; Vaithilingam, Srikant; Oralkan, Ömer

    2014-01-01

    In this paper, we demonstrate 3-D photoacoustic imaging (PAI) of light absorbing objects embedded as deep as 5 cm inside strong optically scattering phantoms using a miniaturized (4 mm × 4 mm × 500 µm), 2-D capacitive micromachined ultrasonic transducer (CMUT) array of 16 × 16 elements with a center frequency of 5.5 MHz. Two-dimensional tomographic images and 3-D volumetric images of the objects placed at different depths are presented. In addition, we studied the sensitivity of CMUT-based PAI to the concentration of indocyanine green dye at 5 cm depth inside the phantom. Under optimized experimental conditions, the objects at 5 cm depth can be imaged with SNR of about 35 dB and a spatial resolution of approximately 500 µm. Results demonstrate that CMUTs with integrated front-end amplifier circuits are an attractive choice for achieving relatively high depth sensitivity for PAI. PMID:22249594

  1. Fabrication and characterization of high-temperature microreactors with thin film heater and sensor patterns in silicon nitride tubes

    NARCIS (Netherlands)

    Tiggelaar, Roald M.; Berenschot, Johan W.; de Boer, J.H.; Sanders, Remco G.P.; Gardeniers, Johannes G.E.; Oosterbroek, R.E.; van den Berg, Albert; Elwenspoek, Michael Curt

    2005-01-01

    In this paper the fabrication and electrical characterization of a silicon microreactor for high-temperature catalytic gas phase reactions, like Rh-catalyzed catalytic partial oxidation of methane into synthesis gas, is presented. The microreactor, realized with micromachining technologies, contains

  2. Quasi-monolithic silicon load cell for loads up to 1000 kg with insensitivity to non-homogeneous load distributions

    NARCIS (Netherlands)

    Wiegerink, Remco J.; Zwijze, A.F.; Krijnen, Gijsbertus J.M.; Lammerink, Theodorus S.J.; Elwenspoek, Michael Curt

    In this paper, a micromachined silicon load cell (force sensor) is presented for measuring loads up to 1000 kg. The sensitive surface of 1 cm2 contains a matrix of capacitive sensing elements to make the load cell insensitive to non-homogeneous load distributions. The load cell has been realized and

  3. Universal fixture for assembling and testing of a silicon-based microcombustor

    Science.gov (United States)

    Jin, Yufeng; Shan, Xue Chuan; Wang, Zhenfeng; Zhang, Haixia; Wong, Chee Khuen

    2005-01-01

    As part of an effort to develop MEMS-based power generation system, an assembly solution for combustion test of a recent-developed micro combustion device micromachined from single crystal silicon were proposed. In order to supply hydrogen/air to inlets of micro combustor from room temperature to over 700°C at the pressure of 1~3bars, a stainless steel universal fixture was designed and fabricated for the combustion testing of prototype stacked by structured Si wafers of 21.5mmx21.5mm in square. By precisely welding and polishing process in fabrication of the fixture, a metal plate with 18nm roughness was prepared for tightly connecting micro combuster with fuel inlet of 2mm, air inlet 4mm in diameter on the top wafer, while the gap between tubings to be hermetically joined to top plate is about 0.3mm. Primary combustion experiments have been conducted after igniting the fuel/air mixture in the micro chamber. Stable hydrogen-air combustion has been observed to sustain inside the combustion chamber with exit temperature over 1200°C. During the combustion experiments, the silicon dies keep good mechanical integrity under assembly and no gas leakage is observed.

  4. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    plasma effect have been tested up to 40 Gbit/s, and hybrid evanescent silicon lasers have been realized both in the form of distributed feed-back lasers and micro-disk lasers. For enhancing the impact of silicon photonics in future ultrafast and energy-efficient all-optical signal processing, e.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some......Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice...

  5. Crystal growth and evaluation of silicon for VLSI and ULSI

    CERN Document Server

    Eranna, Golla

    2014-01-01

    PrefaceAbout the AuthorIntroductionSilicon: The SemiconductorWhy Single CrystalsRevolution in Integrated Circuit Fabrication Technology and the Art of Device MiniaturizationUse of Silicon as a SemiconductorSilicon Devices for Boolean ApplicationsIntegration of Silicon Devices and the Art of Circuit MiniaturizationMOS and CMOS Devices for Digital ApplicationsLSI, VLSI, and ULSI Circuits and ApplicationsSilicon for MEMS ApplicationsSummaryReferencesSilicon: The Key Material for Integrated Circuit Fabrication TechnologyIntroductionPreparation of Raw Silicon MaterialMetallurgical-Grade SiliconPuri

  6. Integration of silicon-based neural probes and micro-drive arrays for chronic recording of large populations of neurons in behaving animals.

    Science.gov (United States)

    Michon, Frédéric; Aarts, Arno; Holzhammer, Tobias; Ruther, Patrick; Borghs, Gustaaf; McNaughton, Bruce; Kloosterman, Fabian

    2016-08-01

    Understanding how neuronal assemblies underlie cognitive function is a fundamental question in system neuroscience. It poses the technical challenge to monitor the activity of populations of neurons, potentially widely separated, in relation to behaviour. In this paper, we present a new system which aims at simultaneously recording from a large population of neurons from multiple separated brain regions in freely behaving animals. The concept of the new device is to combine the benefits of two existing electrophysiological techniques, i.e. the flexibility and modularity of micro-drive arrays and the high sampling ability of electrode-dense silicon probes. Newly engineered long bendable silicon probes were integrated into a micro-drive array. The resulting device can carry up to 16 independently movable silicon probes, each carrying 16 recording sites. Populations of neurons were recorded simultaneously in multiple cortical and/or hippocampal sites in two freely behaving implanted rats. Current approaches to monitor neuronal activity either allow to flexibly record from multiple widely separated brain regions (micro-drive arrays) but with a limited sampling density or to provide denser sampling at the expense of a flexible placement in multiple brain regions (neural probes). By combining these two approaches and their benefits, we present an alternative solution for flexible and simultaneous recordings from widely distributed populations of neurons in freely behaving rats.

  7. Evaluation of silicon and polymer substrates for fabrication of integrated microfluidic microsystems for DNA extraction and amplification.

    Science.gov (United States)

    Gheorghe, M; Blionas, S; Ragoussis, J; Galvin, P

    2006-01-01

    This paper is presenting two different alternatives for the DNA extraction and amplification that will be carried out by two competitive research projects developing bioanalytical microsystems with microfluidics. The first project will develop the microfluidics part on polymer material and the other one on silicon. The polymer approach is currently under development based on a modular microfluidic architecture aimed to simplify the process of designing and building such a microsystem device. A silicon alternative is about to start and is expected to decrease packaging costs of the microsystem allowing future manufacturability of the device.

  8. Capacitive micromachined ultrasonic transducers based on annular cell geometry for air-coupled applications.

    Science.gov (United States)

    Na, Shuai; Chen, Albert I H; Wong, Lawrence L P; Li, Zhenhao; Macecek, Mirek; Yeow, John T W

    2016-09-01

    A novel design of an air-coupled capacitive micromachined ultrasonic transducer (CMUT) with annular cell geometry (annular CMUT) is proposed. Finite element analysis shows that an annular cell has a ratio of average-to-maximum displacement (RAMD) of 0.52-0.58 which is 58-76% higher than that of a conventional circular cell. The increased RAMD leads to a larger volume displacement which results in a 48.4% improved transmit sensitivity and 127.3% improved power intensity. Single-cell annular CMUTs were fabricated with 20-μm silicon plates on 13.7-μm deep and 1.35-mm wide annular cavities using the wafer bonding technique. The measured RAMD of the fabricated CMUTs is 0.54. The resonance frequency was measured to be 94.5kHz at 170-V DC bias. The transmit sensitivity was measured to be 33.83Pa/V and 25.85Pa/V when the CMUT was excited by a continuous wave and a 20-cycle burst, respectively. The receive sensitivity at 170-V DC bias was measured to be 7.7mV/Pa for a 20-cycle burst, and 15.0mV/Pa for a continuous incident wave. The proposed annular CMUT design demonstrates a significant improvement in transmit efficiency, which is an important parameter for air-coupled ultrasonic transducers. Copyright © 2016 Elsevier B.V. All rights reserved.

  9. A case study of micromachined load cell

    Indian Academy of Sciences (India)

    The physical scales as well as the magnitude of signals of various subsystems vary widely. Known and proven integration techniques often lead to considerable loss in advantages the tiny MEMS sensors have to offer. Therefore, it becomes imper- ative to think of the entire system at the outset, at least in terms of the concept.

  10. Experimental Evaluation of Incorporating Digital and Analog Integrated Circuit Die on a Common Substrate Utilizing Silicon-Hybrid Wafer-Scale Integration Technology

    Science.gov (United States)

    1992-03-01

    an uncoated optical alignment flat surface ... ............. . 5-4 5.2. Profilometer measurement of a polished Teflon coating on the optical...as interlevel dielectrics. The most common examples are: silicon dioxide, silicon nitride, spin- on glass (SOG), benzocyclobutene ( BCB ), and the...Glass 3.0 0.2-0.5 - 0.9 BCB 2.75 2.5 30-60 0.2-0.3 Polyimide 3.4 3 5-60 0.5-1.5 the area of vias tend to absorb moisture which adversely affects metal

  11. Dynamic Silicon Nanophotonics

    Science.gov (United States)

    2013-07-31

    sensitive to fabrication imperfections and small temperature changes, therefore they are challenging to integrate into high yield mass production ... Cocoa Beach, Florida, September 2012. 15. Ali Wanis Elshaari, “Photon Manipulation in Silicon Nanophotonic Circuits,” Ph.D. Dissertation, Rochester...1.5-micron Light using Silicon Nanocrystals,” 2012 IEEE Avionics, Fiber Optics and Photonics Conference (AVFOP 2012), ThB3, Cocoa Beach, Florida

  12. A review of micromachined thermal accelerometers

    Science.gov (United States)

    Mukherjee, Rahul; Basu, Joydeep; Mandal, Pradip; Guha, Prasanta Kumar

    2017-12-01

    A thermal convection based micro-electromechanical accelerometer is a relatively new kind of acceleration sensor that does not require a solid proof mass, yielding unique benefits like high shock survival rating, low production cost, and integrability with CMOS integrated circuit technology. This article provides a comprehensive survey of the research, development, and current trends in the field of thermal acceleration sensors, with detailed enumeration on the theory, operation, modeling, and numerical simulation of such devices. Different reported varieties and structures of thermal accelerometers have been reviewed highlighting key design, implementation, and performance aspects. Materials and technologies used for fabrication of such sensors have also been discussed. Further, the advantages and challenges for thermal accelerometers vis-à-vis other prominent accelerometer types have been presented, followed by an overview of associated signal conditioning circuitry and potential applications.

  13. Acoustic backing in 3-D integration of CMUT with front-end electronics.

    Science.gov (United States)

    Berg, Sigrid; Rønnekleiv, Arne

    2012-07-01

    Capacitive micromachined ultrasonic transducers (CMUTs) have shown promising qualities for medical imaging. However, there are still some problems to be investigated, and some challenges to overcome. Acoustic backing is necessary to prevent SAWs excited in the surface of the silicon substrate from affecting the transmit pattern from the array. In addition, echoes resulting from bulk waves in the substrate must be removed. There is growing interest in integrating electronic circuits to do some of the beamforming directly below the transducer array. This may be easier to achieve for CMUTs than for traditional piezoelectric transducers. We will present simulations showing that the thickness of the silicon substrate and thicknesses and acoustic properties of the bonding material must be considered, especially when designing highfrequency transducers. Through simulations, we compare the acoustic properties of 3-D stacks bonded with three different bonding techniques; solid-liquid interdiffusion (SLID) bonding, direct fusion bonding, and anisotropic conductive adhesives (ACA). We look at a CMUT array with a center frequency of 30 MHz and three silicon wafers underneath, having a total silicon thickness of 100 μm. We find that fusion bonding is most beneficial if we want to prevent surface waves from damaging the array response, but SLID and ACA are also promising if bonding layer thicknesses can be reduced.

  14. Micromachining. CERN Courier, Jul-Aug 1995, v. 35(5)

    International Nuclear Information System (INIS)

    Wilson, Martin

    1995-01-01

    Full text: As well as making microcircuit components, X-ray lithography can also be used to make very small mechanical parts, either by using directly the exposed and developed photoresist, or as a mould to produce the component in another material such as ceramic or metal. In this revolutionary technology, metal components are made via the LIGA (Lithographic Galvanoformung und Abformung) technique in which the exposed and developed photoresist is coated with a conducting material and then electroplated, after which the resist is stripped away. In addition to fine size and precision resolution, X-rays offer the advantage of deep penetration and small scattering through the resist, so that patterns may be up to a millimetre deep, with very accurate straightness in directions parallel to the beam. Micromachining via LIGA was developed at KfK Karlsruhe; commercialization and further development is being vigorously pursued by the Institut fur Mikrotechnik in Mainz and by Microparts GmbH in Karlsruhe. Significant developments have been made at the Synchrotron Radiation Centre in Madison, Wisconsin, with new programmes start-ing at SRRC (Taiwan), CAMD (Baton Rouge, Louisiana), and LURE (Paris). There is now an active European Special Interest Group for LIGA. Commercially manufactured micromachines are starting to be used in sensors and connectors. The ability to integrate microdevices with microelectronics raises many interesting possibilities for the future, notably in medicine and for intelligent sensors. In all cases, however, widespread adoption will be governed by the ability to mass-produce cheaply, requiring high volume production. The high intensities of synchrotron radiation will assist in achieving these large throughputs

  15. Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

    Science.gov (United States)

    Gupta, Pranav

    This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

  16. Design of a High-Performance Micro Integrated Surface Plasmon Resonance Sensor Based on Silicon-On-Insulator Rib Waveguide Array

    Directory of Open Access Journals (Sweden)

    Dengpeng Yuan

    2015-07-01

    Full Text Available Based on silicon-on-insulator (SOI rib waveguide with large cross-section, a micro integrated surface plasmon resonance (SPR biochemical sensor platform is proposed. SPR is excited at the deeply etched facet of the bend waveguide by the guiding mode and a bimetallic configuration is employed. With the advantages of SOI rib waveguide and the silicon microfabrication technology, an array of the SPR sensors can be composed to implement wavelength interrogation of the sensors’ output signal, so the spectrometer or other bulky and expensive equipment are not necessary, which enables the SPR sensor to realize the miniaturization and integration of the entire sensing system. The performances of the SPR sensor element are verified by using the two-dimensional finite-different time-domain method. The parameters of the sensor element and the array are optimized for the achievement of high performance for biochemical sensing application. As a typical example, a single bimetallic SPR sensor with 3 nm Au over 32 nm Al possesses a high sensitivity of 3.968 × 104 nm/RIU, a detection-accuracy of 14.7 μm−1. For a uniparted SPR sensor, it can achieve a detection limit of 5.04 × 10−7 RIU. With the relative power measurement accuracy of 0.01 dB, the refractive index variation of 1.14 × 10−5 RIU can be detected by the SPR sensor array.

  17. Hydrogenated amorphous silicon photonics

    Science.gov (United States)

    Narayanan, Karthik

    2011-12-01

    Silicon Photonics is quickly proving to be a suitable interconnect technology for meeting the future goals of on-chip bandwidth and low power requirements. However, it is not clear how silicon photonics will be integrated into CMOS chips, particularly microprocessors. The issue of integrating photonic circuits into electronic IC fabrication processes to achieve maximum flexibility and minimum complexity and cost is an important one. In order to minimize usage of chip real estate, it will be advantageous to integrate in three-dimensions. Hydrogenated amorphous silicon (a-Si:H) is emerging as a promising material for the 3-D integration of silicon photonics for on-chip optical interconnects. In addition, a-Si:H film can be deposited using CMOS compatible low temperature plasma-enhanced chemical vapor deposition (PECVD) process at any point in the fabrication process allowing maximum flexibility and minimal complexity. In this thesis, we demonstrate a-Si:H as a high performance alternate platform to crystalline silicon, enabling backend integration of optical interconnects in a hybrid photonic-electronic network-on-chip architecture. High quality passive devices are fabricated on a low-loss a-Si:H platform enabling wavelength division multiplexing schemes. We demonstrate a broadband all-optical modulation scheme based on free-carrier absorption effect, which can enable compact electro-optic modulators in a-Si:H. Furthermore, we comprehensively characterize the optical nonlinearities in a-Si:H and observe that a-Si:H exhibits enhanced nonlinearities as compared to crystalline silicon. Based on the enhanced nonlinearities, we demonstrate low-power four-wave mixing in a-Si:H waveguides enabling high speed all-optical devices in an a-Si:H platform. Finally, we demonstrate a novel data encoding scheme using thermal and all-optical tuning of silicon waveguides, increasing the spectral efficiency in an interconnect link.

  18. Terahertz Array Receivers with Integrated Antennas

    Science.gov (United States)

    Chattopadhyay, Goutam; Llombart, Nuria; Lee, Choonsup; Jung, Cecile; Lin, Robert; Cooper, Ken B.; Reck, Theodore; Siles, Jose; Schlecht, Erich; Peralta, Alessandro; hide

    2011-01-01

    Highly sensitive terahertz heterodyne receivers have been mostly single-pixel. However, now there is a real need of multi-pixel array receivers at these frequencies driven by the science and instrument requirements. In this paper we explore various receiver font-end and antenna architectures for use in multi-pixel integrated arrays at terahertz frequencies. Development of wafer-level integrated terahertz receiver front-end by using advanced semiconductor fabrication technologies has progressed very well over the past few years. Novel stacking of micro-machined silicon wafers which allows for the 3-dimensional integration of various terahertz receiver components in extremely small packages has made it possible to design multi-pixel heterodyne arrays. One of the critical technologies to achieve fully integrated system is the antenna arrays compatible with the receiver array architecture. In this paper we explore different receiver and antenna architectures for multi-pixel heterodyne and direct detector arrays for various applications such as multi-pixel high resolution spectrometer and imaging radar at terahertz frequencies.

  19. The role of pulse time Toff on porous silicon as template for Au nanoparticles by using the integrated electrochemical technique

    International Nuclear Information System (INIS)

    Amran, T.S.T.; Hashim, M.R.; Ali, N.K.; Yazid, H.; Adnan, R.

    2012-01-01

    Gold nanoparticles (AuNPs) having variety of sizes and shape were prepared using the template synthesis approach. Porous silicon (PSi) was fabricated using the pulsed electrochemical anodization method at different pause times, T off as template for gold deposition. Choosing suitable pulse parameter produces PSi with higher porosity and smaller crystallite size. SEM showed that the variation of T off affects the pores formation and the growth of gold nanoparticles while EDX suggested the presence of Au inside the pores structure. Photoluminescence spectra showed emission enhancement and a blue shifted relative to porous silicon before deposited with AuNPs. XRD shows a high degree crystallinity of the samples and the presence of cubic gold with crystalline sizes was around 42 nm.

  20. Proton beam micromachining on PMMA, Foturan and CR-39 materials

    CERN Document Server

    Rajta, I; Kiss, A Z; Gomez-Morilla, I; Abraham, M H

    2003-01-01

    Proton Beam Micromachining was demonstrated at the Institute of Nuclear Research of the Hungarian Academy of Sciences using three different types of resists: PMMA, Foturan and CR-39 type Solid State Nuclear Track Detector material. Irradiations have been performed on the nuclear microprobe facility at ATOMKI. The beam scanning was done using a National Instruments (NI) card (model 6711), and the new C++ version of the program IonScan, developed specifically for PBM applications called IonScan 2.0. (R.P.)

  1. Capacitive micromachined ultrasonic transducer arrays as tunable acoustic metamaterials

    International Nuclear Information System (INIS)

    Lani, Shane W.; Sabra, Karim G.; Wasequr Rashid, M.; Hasler, Jennifer; Levent Degertekin, F.

    2014-01-01

    Capacitive Micromachined Ultrasonic Transducers (CMUTs) operating in immersion support dispersive evanescent waves due to the subwavelength periodic structure of electrostatically actuated membranes in the array. Evanescent wave characteristics also depend on the membrane resonance which is modified by the externally applied bias voltage, offering a mechanism to tune the CMUT array as an acoustic metamaterial. The dispersion and tunability characteristics are examined using a computationally efficient, mutual radiation impedance based approach to model a finite-size array and realistic parameters of variation. The simulations are verified, and tunability is demonstrated by experiments on a linear CMUT array operating in 2-12 MHz range

  2. Capacitive micromachined ultrasonic transducer arrays as tunable acoustic metamaterials

    Energy Technology Data Exchange (ETDEWEB)

    Lani, Shane W., E-mail: shane.w.lani@gmail.com, E-mail: karim.sabra@me.gatech.edu, E-mail: levent.degertekin@me.gatech.edu; Sabra, Karim G. [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 801Ferst Drive, Georgia 30332-0405 (United States); Wasequr Rashid, M.; Hasler, Jennifer [School of Electrical and Computer Engineering, Georgia Institute of Technology, Van Leer Electrical Engineering Building, 777 Atlantic Drive NW, Atlanta, Georgia 30332-0250 (United States); Levent Degertekin, F. [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 801Ferst Drive, Georgia 30332-0405 (United States); School of Electrical and Computer Engineering, Georgia Institute of Technology, Van Leer Electrical Engineering Building, 777 Atlantic Drive NW, Atlanta, Georgia 30332-0250 (United States)

    2014-02-03

    Capacitive Micromachined Ultrasonic Transducers (CMUTs) operating in immersion support dispersive evanescent waves due to the subwavelength periodic structure of electrostatically actuated membranes in the array. Evanescent wave characteristics also depend on the membrane resonance which is modified by the externally applied bias voltage, offering a mechanism to tune the CMUT array as an acoustic metamaterial. The dispersion and tunability characteristics are examined using a computationally efficient, mutual radiation impedance based approach to model a finite-size array and realistic parameters of variation. The simulations are verified, and tunability is demonstrated by experiments on a linear CMUT array operating in 2-12 MHz range.

  3. Development of capacitive Micromachined Ultrasonic Transducer (III) - Performance Test

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Bok; Ahn, Bong Young; Park, Hae Won; Kim, Young Joo; Lee, Seung Seok [Korea Research Institute of Standards and Science, Daejeon (Korea, Republic of)

    2004-12-15

    In this study, the capacitive micromachined ultrasonic transducer(cMUT) was developed based on the previous research results. The cross sectional image of the developed cMUT was characterized. To measure the membrane displacement of the cMUT, the Michelson phase modulation fiber interferometer was constructed. The measured membrane displacement was in good agreement with the result of the finite element analysis. To estimate the ultrasonic wave generated by the cMUT, an ultrasonic system including a pulser, receiver and charge amplifier was used. The cMUT developed in this study shows a good performance and hence will be widely used in the non-contact ultrasonic applications

  4. Capacitive micromachined ultrasonic transducer arrays as tunable acoustic metamaterials

    Science.gov (United States)

    Lani, Shane W.; Wasequr Rashid, M.; Hasler, Jennifer; Sabra, Karim G.; Levent Degertekin, F.

    2014-02-01

    Capacitive Micromachined Ultrasonic Transducers (CMUTs) operating in immersion support dispersive evanescent waves due to the subwavelength periodic structure of electrostatically actuated membranes in the array. Evanescent wave characteristics also depend on the membrane resonance which is modified by the externally applied bias voltage, offering a mechanism to tune the CMUT array as an acoustic metamaterial. The dispersion and tunability characteristics are examined using a computationally efficient, mutual radiation impedance based approach to model a finite-size array and realistic parameters of variation. The simulations are verified, and tunability is demonstrated by experiments on a linear CMUT array operating in 2-12 MHz range.

  5. Development of capacitive Micromachined Ultrasonic Transducer (III) - Performance Test

    International Nuclear Information System (INIS)

    Kim, Ki Bok; Ahn, Bong Young; Park, Hae Won; Kim, Young Joo; Lee, Seung Seok

    2004-01-01

    In this study, the capacitive micromachined ultrasonic transducer(cMUT) was developed based on the previous research results. The cross sectional image of the developed cMUT was characterized. To measure the membrane displacement of the cMUT, the Michelson phase modulation fiber interferometer was constructed. The measured membrane displacement was in good agreement with the result of the finite element analysis. To estimate the ultrasonic wave generated by the cMUT, an ultrasonic system including a pulser, receiver and charge amplifier was used. The cMUT developed in this study shows a good performance and hence will be widely used in the non-contact ultrasonic applications

  6. Photothermal self-excitation of the micromachined resonators

    Science.gov (United States)

    Churenkov, Alexander V.; Kozel, Stanislav M.; Listvin, Vladimir N.

    1990-07-01

    Recently interest has grown to the physical quantities fibre-optic sensors in which a micromachined resonator acts as a sensitive element. This resonator can change the resonant frequency when acted upon by an outside force. Energy supply necessary for the resonator excitation and transfer of information about the outer action are accomplished by optical fibres, that can be present in the zone of a higher aggressiveness, strong electromagnetic interferences atc. The frequency output of such sensors is easily processed by digital systems and is insensitive to signal level.

  7. Silicon/Porous Silicon Composite Membrane for High Sensitivity Pressure Sensor

    Science.gov (United States)

    2009-07-21

    for integrating with other processes on silicon wafer. The fabrication of silicone rubber membranes for making microvalves has been reported [5...alcohol (IPA) is used along with HF to increase the wettability of the silicon surface and to remove the bubbles formed during the reaction. Aluminium ...Report for AOARD funded Project No. AOARD-074061 Title: Silicon /Porous Silicon composite membrane for high sensitivity pressure sensor PI

  8. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  9. Capacitive micromachined ultrasonic resonator for ultra sensitive trace gas detection

    Science.gov (United States)

    Ge, Li-Feng

    2013-01-01

    The ultra-sensitive trace gas detection has become increasingly important due to the demand for environment and sci-tech progress. In recent years a capacitive micromachined ultrasonic transducer (CMUT) with circular diaphragms used for imaging has been successfully used to detect chemical gases, and shows promising results. However, its behavior is the same as that of CMUTs for ranging, imaging and therapy applications, where the acoustic radiation with a certain power, produced by the vibration of circular diaphragms operating at the first bending mode, is required but is undesirable for gas sensing since it disturbs inevitably the environment to be measured. This paper, therefore, presents to optimize its behavior after an ideal capacitive micromachined ultrasonic resonator (CMUR) and then to utilize second-order and high-order bending modes of the circular diaphragm to minimize its acoustic radiation and obtain higher resonance frequency also. Since the resonance frequencies of high-order modes much higher than the fundamental frequency, an ultra-high operating frequency of GHz can be reached so that raising greatly the sensitivity of the CMUR and being able to realize the ultra-sensitive trace gas detections.

  10. Influence of micromachined targets on laser accelerated proton beam profiles

    Science.gov (United States)

    Dalui, Malay; Permogorov, Alexander; Pahl, Hannes; Persson, Anders; Wahlström, Claes-Göran

    2018-03-01

    High intensity laser-driven proton acceleration from micromachined targets is studied experimentally in the target-normal-sheath-acceleration regime. Conical pits are created on the front surface of flat aluminium foils of initial thickness 12.5 and 3 μm using series of low energy pulses (0.5–2.5 μJ). Proton acceleration from such micromachined targets is compared with flat foils of equivalent thickness at a laser intensity of 7 × 1019 W cm‑2. The maximum proton energy obtained from targets machined from 12.5 μm thick foils is found to be slightly lower than that of flat foils of equivalent remaining thickness, and the angular divergence of the proton beam is observed to increase as the depth of the pit approaches the foil thickness. Targets machined from 3 μm thick foils, on the other hand, show evidence of increasing the maximum proton energy when the depths of the structures are small. Furthermore, shallow pits on 3 μm thick foils are found to be efficient in reducing the proton beam divergence by a factor of up to three compared to that obtained from flat foils, while maintaining the maximum proton energy.

  11. Eye Vision Testing System and Eyewear Using Micromachines

    Directory of Open Access Journals (Sweden)

    Nabeel A. Riza

    2015-11-01

    Full Text Available Proposed is a novel eye vision testing system based on micromachines that uses micro-optic, micromechanic, and microelectronic technologies. The micromachines include a programmable micro-optic lens and aperture control devices, pico-projectors, Radio Frequency (RF, optical wireless communication and control links, and energy harvesting and storage devices with remote wireless energy transfer capabilities. The portable lightweight system can measure eye refractive powers, optimize light conditions for the eye under testing, conduct color-blindness tests, and implement eye strain relief and eye muscle exercises via time sequenced imaging. A basic eye vision test system is built in the laboratory for near-sighted (myopic vision spherical lens refractive error correction. Refractive error corrections from zero up to −5.0 Diopters and −2.0 Diopters are experimentally demonstrated using the Electronic-Lens (E-Lens and aperture control methods, respectively. The proposed portable eye vision test system is suited for children’s eye tests and developing world eye centers where technical expertise may be limited. Design of a novel low-cost human vision corrective eyewear is also presented based on the proposed aperture control concept. Given its simplistic and economical design, significant impact can be created for humans with vision problems in the under-developed world.

  12. Development of an SU-8 MEMS process with two metal electrodes using amorphous silicon as a sacrificial material

    KAUST Repository

    Ramadan, Khaled S.

    2013-02-08

    This work presents an SU-8 surface micromachining process using amorphous silicon as a sacrificial material, which also incorporates two metal layers for electrical excitation. SU-8 is a photo-patternable polymer that is used as a structural layer for MEMS and microfluidic applications due to its mechanical properties, biocompatibility and low cost. Amorphous silicon is used as a sacrificial layer in MEMS applications because it can be deposited in large thicknesses, and can be released in a dry method using XeF2, which alleviates release-based stiction problems related to MEMS applications. In this work, an SU-8 MEMS process was developed using ;-Si as a sacrificial layer. Two conductive metal electrodes were integrated in this process to allow out-of-plane electrostatic actuation for applications like MEMS switches and variable capacitors. In order to facilitate more flexibility for MEMS designers, the process can fabricate dimples that can be conductive or nonconductive. Additionally, this SU-8 process can fabricate SU-8 MEMS structures of a single layer of two different thicknesses. Process parameters were optimized for two sets of thicknesses: thin (5-10 m) and thick (130 m). The process was tested fabricating MEMS switches, capacitors and thermal actuators. © 2013 IOP Publishing Ltd.

  13. Silicon applications in photonics

    Science.gov (United States)

    Jelenski, A. M.; Gawlik, G.; Wesolowski, M.

    2005-09-01

    Silicon technology enabled the miniaturization of computers and other electronic system for information storage, transmission and transformation allowing the development of the Knowledge Based Information Society. Despite the fact that silicon roadmap indicates possibilities for further improvement, already now the speed of electrons and the bandwidth of electronic circuits are not sufficient and photons are commonly utilized for signal transmission through optical fibers and purely photonic circuits promise further improvements. However materials used for these purposes II/V semiconductor compounds, glasses make integration of optoelectronic circuits with silicon complex an expensive. Therefore research on light generation, transformation and transmission in silicon is very active and recently, due to nanotechnology some spectacular results were achieved despite the fact that mechanisms of light generation are still discussed. Three topics will be discussed. Porous silicon was actively investigated due to its relatively efficient electroluminescence enabling its use in light sources. Its index of refraction, differs considerably from the index of silicon, and this allows its utilization for Bragg mirrors, wave guides and photonic crystals. The enormous surface enables several applications on medicine and biotechnology and in particular due to the effective chemo-modulation of its refracting index the design of optical chemosensors. An effective luminescence of doped and undoped nanocrystalline silicon opened another way for the construction of silicon light sources. Optical amplification was already discovered opening perspectives for the construction of nanosilicon lasers. Luminescences was observed at red, green and blue wavelengths. The used technology of silica and ion implantation are compatible with commonly used CMOS technology. Finally the recently developed and proved idea of optically pumped silicon Raman lasers, using nonlinearity and vibrations in the

  14. Steps towards silicon optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Starovoytov, A

    1999-07-01

    This thesis addresses the issue of a potential future microelectronics technology, namely the possibility of utilising the optical properties of nanocrystalline silicon for optoelectronic circuits. The subject is subdivided into three chapters. Chapter 1 is an introduction. It formulates the oncoming problem for microelectronic development, explains the basics of Integrated Optoelectronics, introduces porous silicon as a new light-emitting material and gives a brief review of other competing light-emitting material systems currently under investigation. Examples of existing porous silicon devices are given. Chapter 2 reviews the basic physics relevant to the subject of this thesis and in-forms on the present situation in this field of research, including both experimental and theoretical knowledge gained up-to-date. The chapter provides the necessary background for correct interpretation of the results reported in Chapter 3 and for a realistic decision on the direction for future work. Chapter 3 describes my own experimental and computational results within the framework of the subject, obtained at De Montfort University. These include: one-step preparation of laterally structured porous silicon with photoluminescence and microscopy characterisation, Raman spectroscopy of porous silicon, a polarisation study of the photoluminescence from porous silicon, computer simulations of the conductivity of two-component media and of laser focused atomic deposition for nanostructure fabrication. Thus, this thesis makes a dual contribution to the chosen field: it summarises the present knowledge on the possibility of utilising optical properties of nanocrystalline silicon in silicon-based electronics, and it reports new results within the framework of the subject. The main conclusion is that due to its promising optoelectronic properties nanocrystalline silicon remains a prospective competitor for the cheapest and fastest microelectronics of the next century. (author)

  15. Two-Photon Laser-Assisted Device Alteration in Silicon Integrated Circuits (Open Access, Publisher’s Version)

    Science.gov (United States)

    2013-11-18

    2199–2207 (2003). 17. K. A. Serrels, E. Ramsay, R. J. Warburton, and D. T. Reid, “Nanoscale optical microscopy in the vectorial focusing regime,” Nat...was a proprietary 28 nm bulk-silicon test device (Vdd = 0.8 V, clock frequency = 50 MHz) containing production logic blocks. To exercise the device, a... production scan test, lasting 21 μs, was modified to engineer a race condition – as illustrated in Fig. 1. Data were launched through a data-path

  16. Achievement report for fiscal 1996 on the research and development of micromachine technology. Development of advanced-function maintenance technology for power generation facilities; 1996 nendo micromachine gijutsu no kenkyu kaihatsu seika hokokusho. Hatsuden shisetsuyo kokino maintenance gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    Technologies for integrating functions are studied for a self-propelled surroundings recognition system that travels in a small-diameter tube at power generation facilities. Parameters are analyzed, and piezoelectric locomotion devices are reduced in size. A disk shape microantenna is experimentally built and evaluated, which is for realizing energy supply and communication by means of microwaves. Studies are conducted to improve the performance of optical energy transmission devices and to realize their systematization. Basic specifications are established for the embodiment of CCD (charge coupled device) microcameras to be installed. A high-efficiency, high-reliability micromachine system is constructed, in which multiple machines coordinate with each other for the exterior inspection of groups of small-diameter tubes. Devices which are capable of driving, deceleration, and propulsion prove to be feasible. Basic specifications are established for microconnectors to connect, separate, and combine multiple machines as occasion calls. Also discussed is the development of a micromachine for tube interior check and repair which operates making use of the inspection hole enabling tube interior check and repair without the need of disassembling the equipment to be repaired.

  17. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  18. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  19. Materials Integration and Metamorphic Substrate Engineering from Silicon to Gallium Arsenide to Indium Phosphide for Advanced III-V/Silicon Photovoltaics

    Science.gov (United States)

    Carlin, Andrew M.

    ~10x, to a range of 1×107 cm-2, compared to current state of the art. This reduction can now enable future III-V/Si solar cells based on GaAsP metamorphic buffers in which the underlying Si substrate can participate as an active sub-cell, and such buffers have been demonstrated in this research. Second, in this same lattice constant range, novel GaP/SiGe interfaces on Si were grown and demonstrated to eliminate the small, but not negligible lattice misfit between GaP and Si, and provides a second pathway for future III-V/Si solar cell integration through subsequent metamorphic buffer growth. For the GaAs-InP range of lattice constants, multiple metamorphic buffer strategies, including those based on anion-specific quaternary GaInAsP, combinations of step and linearly-graded buffers, and buffers with multiple ternary alloys were all investigated. Micro-scale phase separation within quaternary anion-graded GaInAsP was identified as a mechanism to significantly inhibit proper lattice misfit strain relaxation, which was explained by thermodynamic arguments consistent with theoretical phase separation. This led to the creation of hybrid step and linearly graded InGaAs/InGaP metamorphic buffers through which phase separation was totally eliminated by avoiding specific compositions that were identified as sources for phase separation. These findings have enabled a realistic path for accessing the full range of bandgaps needed for future high efficiency III-V solar cells through optimized metamorphic III-V grading strategies.

  20. An integrated optic ethanol vapor sensor based on a silicon-on-insulator microring resonator coated with a porous ZnO film.

    Science.gov (United States)

    Yebo, Nebiyu A; Lommens, Petra; Hens, Zeger; Baets, Roel

    2010-05-24

    Optical structures fabricated on silicon-on-insulator technology provide a convenient platform for the implementation of highly compact, versatile and low cost devices. In this work, we demonstrate the promise of this technology for integrated low power and low cost optical gas sensing. A room temperature ethanol vapor sensor is demonstrated using a ZnO nanoparticle film as a coating on an SOI micro-ring resonator of 5 microm in radius. The local coating on the ring resonators is prepared from colloidal suspensions of ZnO nanoparticles of around 3 nm diameter. The porous nature of the coating provides a large surface area for gas adsorption. The ZnO refractive index change upon vapor adsorption shifts the microring resonance through evanescent field interaction. Ethanol vapor concentrations down to 100 ppm are detected with this sensing configuration and a detection limit below 25 ppm is estimated.

  1. Micromachined Chip Scale Thermal Sensor for Thermal Imaging.

    Science.gov (United States)

    Shekhawat, Gajendra S; Ramachandran, Srinivasan; Jiryaei Sharahi, Hossein; Sarkar, Souravi; Hujsak, Karl; Li, Yuan; Hagglund, Karl; Kim, Seonghwan; Aden, Gary; Chand, Ami; Dravid, Vinayak P

    2018-02-27

    The lateral resolution of scanning thermal microscopy (SThM) has hitherto never approached that of mainstream atomic force microscopy, mainly due to poor performance of the thermal sensor. Herein, we report a nanomechanical system-based thermal sensor (thermocouple) that enables high lateral resolution that is often required in nanoscale thermal characterization in a wide range of applications. This thermocouple-based probe technology delivers excellent lateral resolution (∼20 nm), extended high-temperature measurements >700 °C without cantilever bending, and thermal sensitivity (∼0.04 °C). The origin of significantly improved figures-of-merit lies in the probe design that consists of a hollow silicon tip integrated with a vertically oriented thermocouple sensor at the apex (low thermal mass) which interacts with the sample through a metallic nanowire (50 nm diameter), thereby achieving high lateral resolution. The efficacy of this approach to SThM is demonstrated by imaging embedded metallic nanostructures in silica core-shell, metal nanostructures coated with polymer films, and metal-polymer interconnect structures. The nanoscale pitch and extremely small thermal mass of the probe promise significant improvements over existing methods and wide range of applications in several fields including semiconductor industry, biomedical imaging, and data storage.

  2. Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with silicon selectivity

    Science.gov (United States)

    Shoeb, Juline

    Plasma-surface interactions are very important in the fabrication of the nm-sized features of integrated circuits. Plasma processes are employed to produce high-resolution patterns in many of the thin layers of silicon integrated circuits and to remove masking layers while maintaining high selectivity. Integrated plasma processes consisting of sequential steps such as etch, clean and surface modification, are used in semiconductor industries. The surface in contact with the process plasma is exposed to the fluxes of neutrals, ions, molecules, electrons and photons. Modeling of surface reaction mechanisms requires the determination of the characterizations of fluxes (e.g. composition, magnitude, energy and angle) and development of the reaction mechanisms of the processes such as adsorption, reflection, bond breaking and etch product evolution, while reproducing the experimental results. When modeling the reaction mechanism for an entirely new material, the experimental data is often fragmentary. Therefore, fundamental principles such as bond energies and volatility of the etch products must be considered to develop the mechanism. In this thesis, results from a computational investigation of porous low-k SiCOH etching in fluorocarbon plasmas, damage during cleaning of CFx polymer etch residue in Ar/O2 and He/H2 plasmas, NH3 plasma pore sealing and low-k degradation due to water uptake, will be discussed. The plasma etching of HfO2 gate-stacks is also computationally investigated with an emphasis on the selectivity between HfO2 and Si.

  3. Experience on 3D Silicon Sensors for ATLAS IBL

    CERN Document Server

    Darbo, Giovanni

    2015-01-01

    3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high energy physics experiments. This type of sensors has been developed for the Insertable B-Layer (IBL), an additional pixel layer that has been installed in ATLAS during the present shutdown of the LHC collider at CERN. It is presented here the experience in designing, testing and qualifying sensors and detector modules that have been used to equip part of the IBL. Based on the gained experience with 3D silicon sensors for the ATLAS IBL, we discuss possible new developments for the upgrade of ATLAS and CMS at the high-luminosity LHC (HL-LHC).

  4. Experience on 3D silicon sensors for ATLAS IBL

    International Nuclear Information System (INIS)

    Darbo, G.

    2015-01-01

    3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high energy physics experiments. This type of sensors has been developed for the Insertable B-Layer (IBL), an additional pixel layer that has been installed in ATLAS during the present shutdown of the LHC collider at CERN. It is presented here the experience in designing, testing and qualifying sensors and detector modules that have been used to equip part of the IBL. Based on the gained experience with 3D silicon sensors for the ATLAS IBL, we discuss possible new developments for the upgrade of ATLAS and CMS at the high-luminosity LHC (HL-LHC)

  5. High-Tc superconducting antenna-coupled microbolometer on silicon

    Science.gov (United States)

    Rice, Joseph P.; Grossman, Erich N.; Borcherdt, L. J.; Rudman, D. A.

    1994-05-01

    A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-Tc superconductor YBa2Cu3O7 (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 X 10-6 W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 microsecond(s) , a responsivity of the 1000 V/W range, and a noise-equivalent power in the 10-12 W/Hz1/2 range at 1000 Hz.

  6. High-{Tc} superconducting antenna-coupled microbolometer on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Rice, J.P.; Grossman, E.N.; Borcherdt, L.J.; Rudman, D.A. [National Inst. of Standards and Technology, Boulder, CO (United States). Cryoelectronic Metrology Group

    1994-12-31

    A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-{Tc} superconductor YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 {times} 10{sup {minus}6} W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 {micro}s, a responsivity in the 1,000 V/W range, and a noise-equivalent power (NEP) in the 10{sup {minus}12} W/Hz{sup 1/2} range at 1,000 Hz.

  7. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  8. Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors.

    Science.gov (United States)

    Çakır, M Cihan; Çalışkan, Deniz; Bütün, Bayram; Özbay, Ekmel

    2016-09-29

    Metal oxide gas sensors with integrated micro-hotplate structures are widely used in the industry and they are still being investigated and developed. Metal oxide gas sensors have the advantage of being sensitive to a wide range of organic and inorganic volatile compounds, although they lack selectivity. To introduce selectivity, the operating temperature of a single sensor is swept, and the measurements are fed to a discriminating algorithm. The efficiency of those data processing methods strongly depends on temperature uniformity across the active area of the sensor. To achieve this, hot plate structures with complex resistor geometries have been designed and additional heat-spreading structures have been introduced. In this work we designed and fabricated a metal oxide gas sensor integrated with a simple square planar indium tin oxide (ITO) heating element, by using conventional micromachining and thin-film deposition techniques. Power consumption-dependent surface temperature measurements were performed. A 420 °C working temperature was achieved at 120 mW power consumption. Temperature distribution uniformity was measured and a 17 °C difference between the hottest and the coldest points of the sensor at an operating temperature of 290 °C was achieved. Transient heat-up and cool-down cycle durations are measured as 40 ms and 20 ms, respectively.

  9. Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

    Directory of Open Access Journals (Sweden)

    M. Cihan Çakır

    2016-09-01

    Full Text Available Metal oxide gas sensors with integrated micro-hotplate structures are widely used in the industry and they are still being investigated and developed. Metal oxide gas sensors have the advantage of being sensitive to a wide range of organic and inorganic volatile compounds, although they lack selectivity. To introduce selectivity, the operating temperature of a single sensor is swept, and the measurements are fed to a discriminating algorithm. The efficiency of those data processing methods strongly depends on temperature uniformity across the active area of the sensor. To achieve this, hot plate structures with complex resistor geometries have been designed and additional heat-spreading structures have been introduced. In this work we designed and fabricated a metal oxide gas sensor integrated with a simple square planar indium tin oxide (ITO heating element, by using conventional micromachining and thin-film deposition techniques. Power consumption–dependent surface temperature measurements were performed. A 420 °C working temperature was achieved at 120 mW power consumption. Temperature distribution uniformity was measured and a 17 °C difference between the hottest and the coldest points of the sensor at an operating temperature of 290 °C was achieved. Transient heat-up and cool-down cycle durations are measured as 40 ms and 20 ms, respectively.

  10. Surface micromachined counter-meshing gears discrimination device

    International Nuclear Information System (INIS)

    Polosky, M.A.; Garcia, E.J.; Allen, J.J.

    1998-01-01

    This paper discusses the design, fabrication and testing of a surface micromachined Counter-Meshing Gears (CMG) discrimination device which functions as a mechanically coded lock, A 24 bit code is input to unlock the device. Once unlocked, the device provides a path for an energy or information signal to pass through the device. The device is designed to immediately lock up if any portion of the 24 bit code is incorrect. The motivation for the development of this device is based on occurrences referred to as High Consequence Events, A High Consequence Event is an event where an inadvertent operation of a system could result in the catastrophic loss of life, property, or damage to the environment

  11. Performance Enhancement of the Patch Antennas Applying Micromachining Technology

    Directory of Open Access Journals (Sweden)

    Mohamed N. Azermanesh

    2007-09-01

    Full Text Available This paper reports on the application of micromachining technology for performance enhancement of two types of compact antennas which are becoming a common practice in microsystems. Shorted patch antennas (SPA and folded shorted patch antennas operating in the 5-6 GHz ISM band, with intended application in short-range wireless communications, are considered. The electrical length of antennas are modified by etching the substrate of the antennas, thus providing a new degree of freedom to control the antenna operating properties, which is the main novelty of our work. The gain and bandwidth of the antennas are increased by increasing the etching depth. However, etching the substrate affects the operating frequency as well. To keep the operating frequency at a pre-specified value, the dimension of the antennas must be increased by deepening the etching depth. Therefore, a trade off between the performance enhancement of the antennas and the dimensional enlargement is required.

  12. Micromachining Lithium Niobate for Rapid Prototyping of Resonant Biosensors

    International Nuclear Information System (INIS)

    Al-Shibaany, Zeyad Yousif Abdoon; Hedley, John; Huo, Dehong; Hu, Zhongxu

    2014-01-01

    Lithium niobate material is widely used in MEMS application due to its piezoelectric properties. This paper presents the micromachining process of lithium niobate to rapid prototype a resonant biosensor design. A high precision CNC machine was used to machine a sample of lithium niobate material at 5 different spindle speeds to find out the best conditions to machine this brittle material. A qualitative visual check of the surface was performed by using scanning electron microscopy, surface roughness was quantitatively investigated using an optical surface profiler and Raman spectroscopy to check the strain of the surface. Results show that the surface quality of the lithium niobate was significantly affected by the spindle speed with optimum conditions at 70k rpm giving a strained surface with 500 nm rms roughness

  13. Solid polymer electrolyte composite membrane comprising laser micromachined porous support

    Science.gov (United States)

    Liu, Han [Waltham, MA; LaConti, Anthony B [Lynnfield, MA; Mittelsteadt, Cortney K [Natick, MA; McCallum, Thomas J [Ashland, MA

    2011-01-11

    A solid polymer electrolyte composite membrane and method of manufacturing the same. According to one embodiment, the composite membrane comprises a rigid, non-electrically-conducting support, the support preferably being a sheet of polyimide having a thickness of about 7.5 to 15 microns. The support has a plurality of cylindrical pores extending perpendicularly between opposing top and bottom surfaces of the support. The pores, which preferably have a diameter of about 5 microns, are made by laser micromachining and preferably are arranged in a defined pattern, for example, with fewer pores located in areas of high membrane stress and more pores located in areas of low membrane stress. The pores are filled with a first solid polymer electrolyte, such as a perfluorosulfonic acid (PFSA) polymer. A second solid polymer electrolyte, which may be the same as or different than the first solid polymer electrolyte, may be deposited over the top and/or bottom of the first solid polymer electrolyte.

  14. Sub-band-gap laser micromachining of lithium niobate

    DEFF Research Database (Denmark)

    Christensen, F. K.; Müllenborn, Matthias

    1995-01-01

    Laser processing of insulators and semiconductors is usually realized using photon energies exceeding the band-gap energy. This makes laser processing of insulators difficult since high photon energies typically require either a pulsed laser or a frequency-doubled continuous-wave laser. A new...... method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106µm3/s. This enables fast micromachining of small piezoelectric...... structures, or simple etching of grooves for precision positioning of optical fibers. ©1995 American Institute of Physics....

  15. Q-Switched Nd: YAG Laser Micro-Machining System

    International Nuclear Information System (INIS)

    Messaoud, S.; Allam, A.; Siserir, F.; Bouceta, Y.; Kerdja, T.; Ouadjaout, D.

    2008-01-01

    In this paper, we present the design of a low cost Q-switched Nd: YAG laser micro-machining system for photo masks fabrication. It consists of: Nd:YAG laser source, beam delivery system, X-Y table, PC, The CCD camera and TV monitor. The synchronization between the laser source and the X-Y table is realised by NI PCI-7342, the two axis MID-7602 and LabVIEW based program. The first step of this work consists of engraving continuous and discontinuous lines on a thin film metal with a 100 μm resolution by using the YG 980 Quantel Q-switched Nd:YAG laser.

  16. Micromachined hot-wire thermal conductivity probe for biomedical applications.

    Science.gov (United States)

    Yi, Ming; Panchawagh, Hrishikesh V; Podhajsky, Ronald J; Mahajan, Roop L

    2009-10-01

    This paper presents the design, fabrication, numerical simulation, and experimental validation of a micromachined probe that measures thermal conductivity of biological tissues. The probe consists of a pair of resistive line heating elements and resistance temperature detector sensors, which were fabricated by using planar photolithography on a glass substrate. The numerical analysis revealed that the thermal conductivity and diffusivity can be determined by the temperature response induced by the uniform heat flux in the heating elements. After calibrating the probe using a material (agar gel) of known thermal conductivity, the probe was deployed to calculate the thermal conductivity of Crisco. The measured value is in agreement with that determined by the macro-hot-wire probe method to within 3%. Finally, the micro thermal probe was used to investigate the change of thermal conductivity of pig liver before and after RF ablation treatment. The results show an increase in thermal conductivity of liver after the RF ablation.

  17. Analysis and prediction of dimensions and cost of laser micro-machining internal channel fabrication process

    Directory of Open Access Journals (Sweden)

    Brabazon D.

    2010-06-01

    Full Text Available This paper presents the utilisation of Response Surface Methodology (RSM as the prediction tool for the laser micro-machining process. Laser internal microchannels machined using pulsed Nd:YVO4 laser in polycarbonate were investigated. The experiments were carried out according to 33 factorial Design of Experiment (DoE. In this work the three input process set as control parameters were laser power, P; pulse repetition frequency, PRF; and sample translation speed, U. Measured responses were the channel width and the micro-machining operating cost per metre of produced microchannels. The responses were sufficiently predicted within the set micro-machining parameters limits. Two factorial interaction (2FI and quadratic polynomial regression equations for both responses were constructed. It is proposed that the developed prediction equations can be used to find locally optimal micro-machining process parameters under experimental and operational conditions.

  18. Hybrid integration of light-emitters and detectors with SOI-based micro-opto-electro-mechanical systems (MOEMS)

    Science.gov (United States)

    Kubby, Joel A.; Calamita, Jim; Chang, Jen-Tsorng; Chen, Jingkuang; Gulvin, Peter; Lin, C.-C.; Lofthus, Robert; Nowak, Bill; Su, Yi; Tran, Alex; Burns, David; Bryzek, Janusz; Gilbert, John; Hsu, Charles; Korsmeyer, Tom; Morris, Arthur S., III; Plowman, Thomas E.; Rabinovich, Vladimir L.; Daiber, Troy D.; Scharf, Bruce R.; Zosel, Andrew J.; Fan, Li; Hartman, Jim; Husain, Anis; Golubovic-Laikopoulos, Nena; Mali, Raji; Pumo, Tom; Delvecchio, Steve; Zhou, Shifang; Rosa, Michel; Sun, Decai

    2001-05-01

    A multidisciplinary team of end users and suppliers has collaborated to develop a novel yet broadly enabling process for the design, fabrication and assembly of Micro-Opto- Electro-Mechanical Systems (MOEMS). A key goal is to overcome the shortcomings of the polysilicon layer used for fabricating optical components in a conventional surface micromachining process. These shortcomings include the controllability and uniformity of material stress that is a major cause of curvature and deformation in released microstructures. The approach taken by the consortium to overcome this issue is to use the single-crystal-silicon (SCS) device layer of a silicon-on-insulator (SOI) wafer for the primary structural layer. Since optical flatness and mechanical reliability are of utmost importance in the realization of such devices, the use of the silicon device layer is seen as an excellent choice for devices which rely on the optical integrity of the materials used in their construction. A three-layer polysilicon process consisting of two structural layers is integrated on top of the silicon device layer. This add-on process allows for the formation of sliders, hinges, torsional springs, comb drives and other actuating mechanisms for positioning and movement of the optical components. Flip-chip bonding techniques are also being developed for the hybrid integration of edge and surface emitting lasers on the front and back surfaces of the silicon wafer, adding to the functionality and broadly enabling nature of this process. In addition to process development, the MOEMS manufacturing Consortium is extending Micro-Electro-Mechanical Systems (MEMS) modeling and simulation design tools into the optical domain, and using the newly developed infrastructure for fabrication of prototype micro-optical systems in the areas of industrial automation, optical switching for telecommunications and laser printing.

  19. Application of a plastic diaphragm for a silicon micropump

    Science.gov (United States)

    Kang, In-Byeong; Son, Mun-Tak; Haskard, Malcolm R.; Samaan, Noel D.; Ju, Byeong-Kwon

    1997-06-01

    The authors propose the use of a thin plastic film as a diaphragm for a silicon micropump. The plastic diaphragm allows large elastic deflection comprising a microsystem with corrosion resistant and low coefficient of friction. All aspects exploited through the development of a micropump with further advantages of eliminating several processing steps when compared with microdevices employing silicon as the thin vibration element. Low viscosity epoxy resigns and 100 micrometers polyethylene sticky tapes were used to overcome the relatively poor adhesion characteristics of plastics to silicon. The polyethylene sticky tape provides the weak bond onto a silicon wafer having microstructures fabricated by silicon bulk micromachining process. Type EPOFI 40200029 (Struers) low viscosity epoxy resin was used to obtain excellent sealing and high bonding strength between the silicon substrate and the plastic diaphragm. Low viscosity epoxy led to the deep penetration of the epoxy resulting in good sealing characteristics. The diaphragm and silicon micropump developed were tested with an external pneumatic actuator and showed excellent performance at pressures in the range of 0 - 30 psi.

  20. Fly's proprioception-inspired micromachined strain-sensing structure: idea, design, modeling and simulation, and comparison with experimental results

    Energy Technology Data Exchange (ETDEWEB)

    Wicaksono, D H B [Department of Microelectronics, Delft University of Technology, Mekelweg 4, Delft, Zuid-Holland 2628CD (Netherlands); Zhang, L-J [Department of Microelectronics, Delft University of Technology, Mekelweg 4, Delft, Zuid-Holland 2628CD (Netherlands); Pandraud, G [Department of Microelectronics, Delft University of Technology, Mekelweg 4, Delft, Zuid-Holland 2628CD (Netherlands); French, P J [Department of Microelectronics, Delft University of Technology, Mekelweg 4, Delft, Zuid-Holland 2628CD (Netherlands); Vincent, J F V [Department of Mech. Engineering, Bath University Bath, BA2 7AY (United Kingdom)

    2006-04-01

    A new strain-sensing structure inspired from insect's (especially the Fly) propricoception sensor is devised. The campaniform sensillum is a strain-sensing microstructure with very high sensitivity despite its small dimension (diameter {approx}10 {mu}m in a relatively stiff material of insect's exocuticle (E = {approx}10{sup 9} Pa). Previous work shows that the high sensitivity of this structure towards strain is due to its membrane-in-recess- and strainconcentrating-hole-features. Based on this inspiration, we built similar structure using silicon micromachining technology. Then a simple characterisation setup was devised. Here, we present briefly, finite-element modeling and simulation based on this actual sample preparation for the characterisation. As comparison and also to understand mechanical features responsible for the strain-sensitivity, we performed the modeling on different mechanical structures: bulk chunk, blind-hole, through-hole, surface membrane, and membrane-in-recess. The actual experimental characterisation was performed previously using optical technique to membrane in-recess micromachined Si structure. The FEM simulation results confirm that the bending stress and strain are concentrated in the hole-vicinity. The membrane inside the hole acts as displacement transducer. The FEM is in conformity with previous analytical results, as well as the optical characterisation result. The end goal is to build a new type MEMS strain sensor.

  1. Nanosecond pulsed laser ablation of silicon in liquids

    Energy Technology Data Exchange (ETDEWEB)

    Karimzadeh, R.; Anvari, J.Z.; Mansour, N. [Shahid Beheshti University, Department of Physics, Tehran (Iran)

    2009-03-15

    Laser fluence and laser shot number are important parameters for pulse laser based micromachining of silicon in liquids. This paper presents laser-induced ablation of silicon in liquids of the dimethyl sulfoxide (DMSO) and the water at different applied laser fluence levels and laser shot numbers. The experimental results are conducted using 15 ns pulsed laser irradiation at 532 nm. The silicon surface morphology of the irradiated spots has an appearance as one can see in porous formation. The surface morphology exhibits a large number of cavities which indicates as bubble nucleation sites. The observed surface morphology shows that the explosive melt expulsion could be a dominant process for the laser ablation of silicon in liquids using nanosecond pulsed laser irradiation at 532 nm. Silicon surface's ablated diameter growth was measured at different applied laser fluences and shot numbers in both liquid interfaces. A theoretical analysis suggested investigating silicon surface etching in liquid by intense multiple nanosecond laser pulses. It has been assumed that the nanosecond pulsed laser-induced silicon surface modification is due to the process of explosive melt expulsion under the action of the confined plasma-induced pressure or shock wave trapped between the silicon target and the overlying liquid. This analysis allows us to determine the effective lateral interaction zone of ablated solid target related to nanosecond pulsed laser illumination. The theoretical analysis is found in excellent agreement with the experimental measurements of silicon ablated diameter growth in the DMSO and the water interfaces. Multiple-shot laser ablation threshold of silicon is determined. Pulsed energy accumulation model is used to obtain the single-shot ablation threshold of silicon. The smaller ablation threshold value is found in the DMSO, and the incubation effect is also found to be absent. (orig.)

  2. A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

    Science.gov (United States)

    Geng, Fei; Ding, Xiao-yun; Xu, Gao-wei; Luo, Le

    2009-10-01

    A wafer-level packaging structure with chips and passive components embedded in a silicon substrate for multichip modules (MCM) is proposed for radio frequency (RF) applications. The packaging structure consists of two layers of benzocyclobutene (BCB) films and three layers of metalized films, in which the monolithic microwave ICs (MMICs), thin film resistors, striplines and microstrip lines are integrated. The low resistivity silicon wafer with etched cavities is used as a substrate. The BCB films serve as interlayer dielectrics (ILDs). Wirebonding gold bumps are used as electric interconnections between different layers, which eliminate the need of preparing vias by costly procedures including dry etching, metal sputtering and electroplating. The chemical mechanical planarization (CMP) is used to uncover the gold bumps, and the BCB curing profile is optimized to obtain the appropriate BCB film for CMP process. In this work, the thermal, mechanical, electrical as well as RF properties of the packaging structure are investigated. The packaging thermal resistance can be controlled below 2 °C W-1. The average shear strength of the gold bumps on the BCB surface is about 70 MPa. In addition, a Kelvin test structure is fabricated for resistance testing of the vertical vias. The performances of MMIC and interconnection structure at high frequency are simulated and tested. The testing results reveal that the slight shifting of S-parameter curves of the packaged MMIC indicates perfect transmission characteristics at high frequency. For the transition structure of transmission line, the experimental results are compatible with the simulation results. The insertion loss (S21) is below 0.4 dB from 0 to 40 GHz and the return loss (S11) is less than -20 dB from 0 to 40 GHz. For a low noise amplifier (LNA) chip, the S21 shifting caused by the packaging structure is below 0.5 dB, and S11 is less than -10 dB from 8 GHz to 14 GHz.

  3. A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

    International Nuclear Information System (INIS)

    Geng, Fei; Ding, Xiao-yun; Xu, Gao-wei; Luo, Le

    2009-01-01

    A wafer-level packaging structure with chips and passive components embedded in a silicon substrate for multichip modules (MCM) is proposed for radio frequency (RF) applications. The packaging structure consists of two layers of benzocyclobutene (BCB) films and three layers of metalized films, in which the monolithic microwave ICs (MMICs), thin film resistors, striplines and microstrip lines are integrated. The low resistivity silicon wafer with etched cavities is used as a substrate. The BCB films serve as interlayer dielectrics (ILDs). Wirebonding gold bumps are used as electric interconnections between different layers, which eliminate the need of preparing vias by costly procedures including dry etching, metal sputtering and electroplating. The chemical mechanical planarization (CMP) is used to uncover the gold bumps, and the BCB curing profile is optimized to obtain the appropriate BCB film for CMP process. In this work, the thermal, mechanical, electrical as well as RF properties of the packaging structure are investigated. The packaging thermal resistance can be controlled below 2 °C W −1 . The average shear strength of the gold bumps on the BCB surface is about 70 MPa. In addition, a Kelvin test structure is fabricated for resistance testing of the vertical vias. The performances of MMIC and interconnection structure at high frequency are simulated and tested. The testing results reveal that the slight shifting of S-parameter curves of the packaged MMIC indicates perfect transmission characteristics at high frequency. For the transition structure of transmission line, the experimental results are compatible with the simulation results. The insertion loss (S 21 ) is below 0.4 dB from 0 to 40 GHz and the return loss (S 11 ) is less than −20 dB from 0 to 40 GHz. For a low noise amplifier (LNA) chip, the S 21 shifting caused by the packaging structure is below 0.5 dB, and S 11 is less than −10 dB from 8 GHz to 14 GHz

  4. Reduction of signal reflection along through silicon via channel in high-speed three-dimensional integration circuit

    Science.gov (United States)

    Liu, Xiao-Xian; Zhu, Zhang-Ming; Yang, Yin-Tang; Wang, Feng-Juan; Ding, Rui-Xue

    2014-03-01

    The through silicon via (TSV) technology has proven to be the critical enabler to realize a three-dimensional (3D) gigscale system with higher performance but shorter interconnect length. However, the received digital signal after transmission through a TSV channel, composed of redistribution layers (RDLs), TSVs, and bumps, is degraded at a high data-rate due to the non-idealities of the channel. We propose the Chebyshev multisection transformers to reduce the signal reflection of TSV channel when operating frequency goes up to 20 GHz, by which signal reflection coefficient (S11) and signal transmission coefficient (S21) are improved remarkably by 150% and 73.3%, respectively. Both the time delay and power dissipation are also reduced by 4% and 13.3%, respectively. The resistance-inductance-conductance-capacitance (RLGC) elements of the TSV channel are iterated from scattering (S)-parameters, and the proposed method of weakening the signal reflection is verified using high frequency simulator structure (HFSS) simulation software by Ansoft.

  5. Implanted Silicon Resistor Layers for Efficient Terahertz Absorption

    Science.gov (United States)

    Chervenak, J. A.; Abrahams, J.; Allen, C. A.; Benford, D. J.; Henry, R.; Stevenson, T.; Wollack, E.; Moseley, S. H.

    2005-01-01

    Broadband absorption structures are an essential component of large format bolometer arrays for imaging GHz and THz radiation. We have measured electrical and optical properties of implanted silicon resistor layers designed to be suitable for these absorbers. Implanted resistors offer a low-film-stress, buried absorber that is robust to longterm aging, temperature, and subsequent metals processing. Such an absorber layer is readily integrated with superconducting integrated circuits and standard micromachining as demonstrated by the SCUBA II array built by ROE/NIST (1). We present a complete characterization of these layers, demonstrating frequency regimes in which different recipes will be suitable for absorbers. Single layer thin film coatings have been demonstrated as effective absorbers at certain wavelengths including semimetal (2,3), thin metal (4), and patterned metal films (5,6). Astronomical instrument examples include the SHARC II instrument is imaging the submillimeter band using passivated Bi semimetal films and the HAWC instrument for SOFIA, which employs ultrathin metal films to span 1-3 THz. Patterned metal films on spiderweb bolometers have also been proposed for broadband detection. In each case, the absorber structure matches the impedance of free space for optimal absorption in the detector configuration (typically 157 Ohms per square for high absorption with a single or 377 Ohms per square in a resonant cavity or quarter wave backshort). Resonant structures with -20% bandwidth coupled to bolometers are also under development; stacks of such structures may take advantage of instruments imaging over a wide band. Each technique may enable effective absorbers in imagers. However, thin films tend to age, degrade or change during further processing, can be difficult to reproduce, and often exhibit an intrinsic granularity that creates complicated frequency dependence at THz frequencies. Thick metal films are more robust but the requirement for

  6. Safety and security monitoring of dams using nano-micromachined-based surface acoustic wave (SAW) sensors

    Science.gov (United States)

    Ross, Wayne, Jr.; Saafi, Mohamed; Romine, Peter; Xiao, Zhigang; Pett, Dave

    2006-03-01

    Concerns about the safety of concrete dams have increased during recent years, partly because the population at risk in locations downstream of major dams continues to expand and also because these old dams are experiencing long-term damage and the seismic design concepts used to build them were inadequate. Reliable techniques for continuous monitoring of certain key parameters affecting the dams' integrity are currently nonexistent and this is because of the lack of sensing technology capable to function in a hostile environment such as low temperatures and high moisture level. This paper presents new low cost, passive and wireless micro-machined SAW-based sensors to monitor the safety and security of dams. These SAW sensors are composed of MEMS transducers, Nano-polymer actuators and an antenna, and are deposited on a thin film substrate. The sensors are passive, do not require power on-board and can be interrogated wireless using a radar. When embedded into concrete dams, the devices will be able to detect and locate internal cracks and measure certain key parameters affecting the durability of dams such as temperature, moisture, pH, chloride and carbon dioxide.

  7. On-chip hybrid photonic-plasmonic light concentrator for nanofocusing in an integrated silicon photonics platform.

    Science.gov (United States)

    Luo, Ye; Chamanzar, Maysamreza; Apuzzo, Aniello; Salas-Montiel, Rafael; Nguyen, Kim Ngoc; Blaize, Sylvain; Adibi, Ali

    2015-02-11

    The enhancement and confinement of electromagnetic radiation to nanometer scale have improved the performances and decreased the dimensions of optical sources and detectors for several applications including spectroscopy, medical applications, and quantum information. Realization of on-chip nanofocusing devices compatible with silicon photonics platform adds a key functionality and provides opportunities for sensing, trapping, on-chip signal processing, and communications. Here, we discuss the design, fabrication, and experimental demonstration of light nanofocusing in a hybrid plasmonic-photonic nanotaper structure. We discuss the physical mechanisms behind the operation of this device, the coupling mechanisms, and how to engineer the energy transfer from a propagating guided mode to a trapped plasmonic mode at the apex of the plasmonic nanotaper with minimal radiation loss. Optical near-field measurements and Fourier modal analysis carried out using a near-field scanning optical microscope (NSOM) show a tight nanofocusing of light in this structure to an extremely small spot of 0.00563(λ/(2n(rmax)))(3) confined in 3D and an exquisite power input conversion of 92%. Our experiments also verify the mode selectivity of the device (low transmission of a TM-like input mode and high transmission of a TE-like input mode). A large field concentration factor (FCF) of about 4.9 is estimated from our NSOM measurement with a radius of curvature of about 20 nm at the apex of the nanotaper. The agreement between our theory and experimental results reveals helpful insights about the operation mechanism of the device, the interplay of the modes, and the gradual power transfer to the nanotaper apex.

  8. Wafer-Scale Integration of Inverted Nanopyramid Arrays for Advanced Light Trapping in Crystalline Silicon Thin Film Solar Cells.

    Science.gov (United States)

    Zhou, Suqiong; Yang, Zhenhai; Gao, Pingqi; Li, Xiaofeng; Yang, Xi; Wang, Dan; He, Jian; Ying, Zhiqin; Ye, Jichun

    2016-12-01

    Crystalline silicon thin film (c-Si TF) solar cells with an active layer thickness of a few micrometers may provide a viable pathway for further sustainable development of photovoltaic technology, because of its potentials in cost reduction and high efficiency. However, the performance of such cells is largely constrained by the deteriorated light absorption of the ultrathin photoactive material. Here, we report an efficient light-trapping strategy in c-Si TFs (~20 μm in thickness) that utilizes two-dimensional (2D) arrays of inverted nanopyramid (INP) as surface texturing. Three types of INP arrays with typical periodicities of 300, 670, and 1400 nm, either on front, rear, or both surfaces of the c-Si TFs, are fabricated by scalable colloidal lithography and anisotropic wet etch technique. With the extra aid of antireflection coating, the sufficient optical absorption of 20-μm-thick c-Si with a double-sided 1400-nm INP arrays yields a photocurrent density of 39.86 mA/cm(2), which is about 76 % higher than the flat counterpart (22.63 mA/cm(2)) and is only 3 % lower than the value of Lambertian limit (41.10 mA/cm(2)). The novel surface texturing scheme with 2D INP arrays has the advantages of excellent antireflection and light-trapping capabilities, an inherent low parasitic surface area, a negligible surface damage, and a good compatibility for subsequent process steps, making it a good alternative for high-performance c-Si TF solar cells.

  9. On the integration of a microdialysis-based microTAS with calibration facility on a silicon-glass sandwich

    NARCIS (Netherlands)

    Sprenkels, A.J.; Olthuis, Wouter; Bergveld, Piet

    2000-01-01

    The integration is discussed of all parts of a microdialysis-based micro Total Analysis System or ¿TAS. In particular a microdialysis probe, a potentiometric and amperometric ion- and enzyme sensor and a calibration dosing pump have been developed separately using different precision machining

  10. Fabrication process for CMUT arrays with polysilicon electrodes, nanometre precision cavity gaps and through-silicon vias

    Science.gov (United States)

    Due-Hansen, J.; Midtbø, K.; Poppe, E.; Summanwar, A.; Jensen, G. U.; Breivik, L.; Wang, D. T.; Schjølberg-Henriksen, K.

    2012-07-01

    Capacitive micromachined ultrasound transducers (CMUTs) can be used to realize miniature ultrasound probes. Through-silicon vias (TSVs) allow for close integration of the CMUT and read-out electronics. A fabrication process enabling the realization of a CMUT array with TSVs is being developed. The integrated process requires the formation of highly doped polysilicon electrodes with low surface roughness. A process for polysilicon film deposition, doping, CMP, RIE and thermal annealing that resulted in a film with sheet resistance of 4.0 Ω/□ and a surface roughness of 1 nm rms has been developed. The surface roughness of the polysilicon film was found to increase with higher phosphorus concentrations. The surface roughness also increased when oxygen was present in the thermal annealing ambient. The RIE process for etching CMUT cavities in the doped polysilicon gave a mean etch depth of 59.2 ± 3.9 nm and a uniformity across the wafer ranging from 1.0 to 4.7%. The two presented processes are key processes that enable the fabrication of CMUT arrays suitable for applications in for instance intravascular cardiology and gastrointestinal imaging.

  11. Fabrication process for CMUT arrays with polysilicon electrodes, nanometre precision cavity gaps and through-silicon vias

    International Nuclear Information System (INIS)

    Due-Hansen, J; Poppe, E; Summanwar, A; Jensen, G U; Breivik, L; Wang, D T; Schjølberg-Henriksen, K; Midtbø, K

    2012-01-01

    Capacitive micromachined ultrasound transducers (CMUTs) can be used to realize miniature ultrasound probes. Through-silicon vias (TSVs) allow for close integration of the CMUT and read-out electronics. A fabrication process enabling the realization of a CMUT array with TSVs is being developed. The integrated process requires the formation of highly doped polysilicon electrodes with low surface roughness. A process for polysilicon film deposition, doping, CMP, RIE and thermal annealing that resulted in a film with sheet resistance of 4.0 Ω/□ and a surface roughness of 1 nm rms has been developed. The surface roughness of the polysilicon film was found to increase with higher phosphorus concentrations. The surface roughness also increased when oxygen was present in the thermal annealing ambient. The RIE process for etching CMUT cavities in the doped polysilicon gave a mean etch depth of 59.2 ± 3.9 nm and a uniformity across the wafer ranging from 1.0 to 4.7%. The two presented processes are key processes that enable the fabrication of CMUT arrays suitable for applications in for instance intravascular cardiology and gastrointestinal imaging. (paper)

  12. Enhancement of the optical Kerr effect exhibited by an integrated configuration of silicon quantum dots and silver nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Suarez, A; Benami, A; Tamayo-Rivera L; Reyes-Esqueda, J A; Cheang-Wong, J C; Rodriguez-Fernandez, L; Crespo-Sosa, A; Oliver, A [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, D. F. 04510 (Mexico); R Rangel-Rojo [Departamento de Optica, Centro de Investigacion CientIfica y de Educacion Superior de Ensenada, Apartado Postal 2732, Ensenada, BC 22860 (Mexico); Torres-Torres, C, E-mail: rrangel@cicese.mx [Seccion de Estudios de Posgrado e Investigacion, ESIME-Z, Instituto Politecnico Nacional, D.F. 07738 (Mexico)

    2011-01-01

    We present nonlinear refractive results for three different systems produced by ion implantation: high purity silica substrates with silicon quantum dots (Si-QDs), silver nanoparticles (Ag-NPs), and one sample containing both. We used a femtosecond optical Kerr gate (OKG) with 80 fs pulses at 830 nm to investigate the magnitude and response time of their nonlinear response. The Ag-NPs samples were prepared implanting 2 MeV Ag{sup 2+} ions at different fluencies. A sample with 1x10{sup 17} ions/cm{sup 2} showed no discernible Kerr signal, while for one with 2.4x10{sup 17} ions/cm{sup 2} we measured |{chi}{sup (3)}|{sub 1111} = 5.1x10{sup -11} esu. The Si-QDs sample required irradiation with 1.5 MeV Si{sup 2+} ions, at a 2.5x10{sup 17} ions/cm{sup 2} fluence in order that the OKG results for this sample yielded a similar |{chi}{sup (3)}|{sub 1111} value. The sample containing the Si-QDs was then irradiated by 1 MeV Ag2+ ions at a 4.44 x 10{sup 16} ions/cm{sup 2} fluence and thermally treated, for which afterward we measured |{chi}{sup (3)}|{sub 1111} 1.7x10{sup -10} esu. In all cases the response time was quasi-instantaneous. These results imply that the inclusion of Ag-NPs at low fluence, enhances the nonlinearity of the composite by a factor of around three, and that this is purely electronic in nature. Pump-probe results show that there is not any nonlinear absorption present. We estimate that the confinement effect of the Si-QDs in the sample plays an important role for the excitation of the Surface Plasmon Resonance (SPR) related to the Ag-NPs. A theoretical model that describes the modification of the third order nonlinearity is also presented.

  13. Fiscal 1996 report on technological results. R and D on micromachine technology; 1996 nendo micromachine gijutsu no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Researches on basic element technology of micromachines are conducted that operate autonomously in a narrow small part in a complicated apparatus or in vivo. The areas of activity are (1) research on micromachine systems, (2) a subminiature liquid synthesizing system, and (3) comprehensive investigation and research. In (1), the researches were carried out on the miniaturization and functional combination of a micro laser catheter and a micro tactile sensor catheter, which are the primary components of a coeliac diagnostic and therapeutic system, a 'micro catheter for cerebral blood vessel/treatment', as a micromachine system in the medical field. In (2), R and D was conducted on a system element technology assuming it contributed to a subminiature liquid synthesizing system capable of preparing various liquids including pharmaceuticals accurately with a trace amount. In (3), examination was made on the application area of a micromachine system with priority given to a medical field and also on technological subjects to be tapped, as well as on the contents of (2), with a device installed for evaluating the operating characteristic of a distribution type fluid actuator as needed for the development. (NEDO)

  14. Fabrication of Micromachined SnO2 Based MOS Gas Sensor with Inbuilt Microheater for Detection of Methanol

    Directory of Open Access Journals (Sweden)

    Priyanka Kakoty

    2016-09-01

    Full Text Available This paper presents a simple method to fabricate a vertical closed membrane structured gas sensor on silicon substrate using micromachining technology for methanol detection at lower concentration. An undoped tin dioxide thin film is deposited by DC magnetron sputtering technique on a pair of gold interdigitated microelectrodes of dimension 820 µm ´ 925 µm. A meander shaped platinum micro heater of dimension 1025 µm ´ 1000 µm is incorporated to provide optimum operating temperature (about 350 0C for sensing operation. Energy dispersive X-ray spectroscopy is done to confirm the chemical composition of the sensor. Temperature coefficient of resistance of the inbuilt micro heater is found to be 0.0941 /0C. The sensor resistance shows significant change when micro heater voltage is varied from 1.5 V-3 V. I-V analysis of the sensor is carried out at 25 0C, 50 0C and 75 0C, and shifts in current through the sensor at different temperatures are observed. I-V characterization is also carried out at different methanol concentration levels (50-110 ppm and it is found that at minimum 80 ppm, the sensor exhibits promising result. The response time and recovery time of the sensor is found to be 160 s and 167 s respectively.

  15. A micromachined dual-axis beam steering actuator for use in a miniaturized optical space communication system

    International Nuclear Information System (INIS)

    Palmer, K; Lotfi, S; Berglund, M; Thornell, G; Kratz, H

    2010-01-01

    The design, fabrication and evaluation of an electrothermally actuated micromachined beam steering device for use in a free-space optical communication system intended for use on micro- and nanospacecraft in kilometer-sized formations are presented. SU-8 confined in v-grooves is heated to create bending movement in two orthogonal directions for two-axial steering with large static bending angles and low actuation voltages. Standard MEMS processing is used to fabricate the devices with square mirror side lengths of 1, 3.5 and 5 mm. In addition, a method to prevent thermal damage to SU-8 during deep reactive ion etching has been successfully developed. Characterization shows optical scan ranges larger than 40° in both directions with the maximum driving voltage of 16 V corresponding to a total power consumption of 1.14 W. Infrared imaging is used to investigate thermal cross-talk between actuators for the two scanning directions. It is found that a silicon backbone on the joint backside is crucial for device performance. Differences from expected performance are believed to arise from the SU-8 curing process and excessive heating during fabrication. A finite element method simulation is used to find the eigenfrequencies of the structures, and these are in good agreement with the measured frequency response

  16. Collective optical Kerr effect exhibited by an integrated configuration of silicon quantum dots and gold nanoparticles embedded in ion-implanted silica

    International Nuclear Information System (INIS)

    Torres-Torres, C; López-Suárez, A; Oliver, A; Can-Uc, B; Rangel-Rojo, R; Tamayo-Rivera, L

    2015-01-01

    The study of the third-order optical nonlinear response exhibited by a composite containing gold nanoparticles and silicon quantum dots nucleated by ion implantation in a high-purity silica matrix is presented. The nanocomposites were explored as an integrated configuration containing two different ion-implanted distributions. The time-resolved optical Kerr gate and z-scan techniques were conducted using 80 fs pulses at a 825 nm wavelength; while the nanosecond response was investigated by a vectorial two-wave mixing method at 532 nm with 1 ns pulses. An ultrafast purely electronic nonlinearity was associated to the optical Kerr effect for the femtosecond experiments, while a thermal effect was identified as the main mechanism responsible for the nonlinear optical refraction induced by nanosecond pulses. Comparative experimental tests for examining the contribution of the Au and Si distributions to the total third-order optical response were carried out. We consider that the additional defects generated by consecutive ion irradiations in the preparation of ion-implanted samples do not notably modify the off-resonance electronic optical nonlinearities; but they do result in an important change for near-resonant nanosecond third-order optical phenomena exhibited by the closely spaced nanoparticle distributions. (paper)

  17. Design and implementation of an integrated architecture for massive parallel data treatment of analogue signals supplied by silicon detectors of very high spatial resolution

    International Nuclear Information System (INIS)

    Michel, J.

    1993-02-01

    This doctorate thesis studies an integrated architecture designed to a parallel massive treatment of analogue signals supplied by silicon detectors of very high spatial resolution. The first chapter is an introduction presenting the general outline and the triggering conditions of the spectrometer. Chapter two describes the operational structure of a microvertex detector made of Si micro-plates associated to the measuring chains. Information preconditioning is related to the pre-amplification stage, to the pile-up effects and to the reduction in the time characteristic due to the high counting rates. The chapter three describes the architecture of the analogue delay buffer, makes an analysis of the intrinsic noise and presents the operational testings and input/output control operations. The fourth chapter is devoted to the description of the analogue pulse shape processor and gives also the testings and the corresponding measurements on the circuit. Finally, the chapter five deals with the simplest modeling of the entire conditioning chain. Also, the testings and measuring procedures are here discussed. In conclusion the author presents some prospects for improving the signal-to-noise ratio by summation of the de-convoluted micro-paths. 78 refs., 78 figs., 1 annexe

  18. High-voltage (100 V ChipfilmTM single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays

    Directory of Open Access Journals (Sweden)

    J. N. Burghartz

    2009-05-01

    Full Text Available System-in-Foil (SiF is an emerging field of large-area polymer electronics that employs new materials such as conductive polymers and electrophoretic micro-capsules (E-Ink along with ultra-thin and thus flexible chips. In flexible displays, the integration of gate and source drivers onto the flexible part increases the yield and enhances the reliability of the system. In this work we propose a high-voltage ChipfilmTM lateral diffused MOS transistor (LDMOS structure on ultra-thin single-crystalline silicon chips. The fabrication process is compatible with CMOS standard processing. This LDMOS structure proves to be well suited for providing adequately large switching voltages in spite of the thin (<10 μm substrate. A breakdown voltage of more than 100 volts with drain-to-source saturation current Ids(sat≈85 μA/μm for N-LDMOS and Ids(sat≈20 μA/μm for P-LDMOS is predicted through process and device simulations.

  19. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  20. Vertically aligned CNT growth on a microfabricated silicon heater with integrated temperature control—determination of the activation energy from a continuous thermal gradient

    DEFF Research Database (Denmark)

    Engstrøm, Daniel Southcott; Rupesinghe, Nalin L; Teo, Kenneth B K

    2011-01-01

    Silicon microheaters for local growth of a vertically aligned carbon nanotube (VACNT) were fabricated. The microheaters had a four-point-probe structure that measured the silicon conductivity variations in the heated region which is a measure of the temperature. Through FEM simulations the temper...