WorldWideScience

Sample records for silicon materials task

  1. Silicon materials task of the Low Cost Solar Array Project: Effect of impurities and processing on silicon solar cells

    Science.gov (United States)

    Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Hanes, M. H.; Rai-Choudhury, P.; Mollenkopf, H. C.

    1982-01-01

    The effects of impurities and processing on the characteristics of silicon and terrestrial silicon solar cells were defined in order to develop cost benefit relationships for the use of cheaper, less pure solar grades of silicon. The amount of concentrations of commonly encountered impurities that can be tolerated in typical p or n base solar cells was established, then a preliminary analytical model from which the cell performance could be projected depending on the kinds and amounts of contaminants in the silicon base material was developed. The impurity data base was expanded to include construction materials, and the impurity performace model was refined to account for additional effects such as base resistivity, grain boundary interactions, thermal processing, synergic behavior, and nonuniform impurity distributions. A preliminary assessment of long term (aging) behavior of impurities was also undertaken.

  2. Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

    Science.gov (United States)

    Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

    1978-01-01

    Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

  3. Low cost silicon solar array project silicon materials task: Establishment of the feasibility of a process capable of low-cost, high volume production of silane (step 1) and the pyrolysis of silane to semiconductor-grade silicon (step 2)

    Science.gov (United States)

    Breneman, W. C.; Cheung, H.; Farrier, E. G.; Morihara, H.

    1977-01-01

    A quartz fluid bed reactor capable of operating at temperatures of up to 1000 C was designed, constructed, and successfully operated. During a 30 minute experiment, silane was decomposed within the reactor with no pyrolysis occurring on the reactor wall or on the gas injection system. A hammer mill/roller-crusher system appeared to be the most practical method for producing seed material from bulk silicon. No measurable impurities were detected in the silicon powder produced by the free space reactor, using the cathode layer emission spectroscopic technique. Impurity concentration followed by emission spectroscopic examination of the residue indicated a total impurity level of 2 micrograms/gram. A pellet cast from this powder had an electrical resistivity of 35 to 45 ohm-cm and P-type conductivity.

  4. Low cost solar array project silicon materials task. Development of a process for high capacity arc heater production of silicon for solar arrays

    Science.gov (United States)

    Fey, M. G.

    1981-01-01

    The experimental verification system for the production of silicon via the arc heater-sodium reduction of SiCl4 was designed, fabricated, installed, and operated. Each of the attendant subsystems was checked out and operated to insure performance requirements. These subsystems included: the arc heaters/reactor, cooling water system, gas system, power system, Control & Instrumentation system, Na injection system, SiCl4 injection system, effluent disposal system and gas burnoff system. Prior to introducing the reactants (Na and SiCl4) to the arc heater/reactor, a series of gas only-power tests was conducted to establish the operating parameters of the three arc heaters of the system. Following the successful completion of the gas only-power tests and the readiness tests of the sodium and SiCl4 injection systems, a shakedown test of the complete experimental verification system was conducted.

  5. Development and Evaluation of Die Materials for Use in the Growth of Silicon Ribbons by the Inverted Ribbon Growth Process. Task 2: LSSA Project

    Science.gov (United States)

    Duffy, M. T.; Berkman, S.; Moss, H. I.; Cullen, G. W.

    1978-01-01

    Several ribbon growth experiments were performed from V-shaped dies coated with CVD Si3N4. The most significant result was the ability to perform five consecutive growth runs from the same die without mechanical degradation of the die through temperature cycling. The die was made from vitreous carbon coated with CVD Si3N4. Silicon oxynitride, Si2N2O, was examined with respect to thermal stability in contact with molten silicon. The results of X-ray analysis indicate that this material is converted to both alpha - and beta-Si3N4 in the presence of molten silicon. Experiments on the stability of CVD SiOxNy shoe that this material can be maintained in contact with molten silicon (sessile drop test) for greater than 30 h at 1450 C without total decompositon. These layers are converted mainly to beta-Si3N4.

  6. Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process, task 2. LSSA project

    Science.gov (United States)

    Duffy, M. T.; Berkman, S.; Moss, H. S.; Cullen, G. W.

    1978-01-01

    The results of emission spectroscopic analysis indicate that molten silicon can remain in contact with hot-pressed Si3N4 (99.2 percent theoretical density) for prolonged periods without attaining the impurity content level of the nitride. Although MgO was used as binder, Mg was not found present in the silicon sessile drop in quantities much above the level initially present in the silicon source material. Preliminary experiments with EFG-type dies coated with CVD Si3N4 or CVD SiOxNy indicate that capillary rise does not occur readily in these dies. The same was found to be true of hot-pressed and reaction-sintered Si3N4 obtained commercially. However, when dies were formed by depositing CVD layers on shaped silicon slabs, a column of molten silicon was maintained in each CVD die while being heated in contact with a crucible of molten silicon. Preliminary wetting of dies appears necessary for EFG growth. Several ribbon growth experiments were performed from V-shaped dies.

  7. Germanium silicon physics and materials

    CERN Document Server

    Willardson, R K; Bean, John C; Hull, Robert

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  8. Flat-plate solar array project. Volume 2: Silicon material

    Science.gov (United States)

    Lutwack, R.

    1986-10-01

    The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

  9. Flat-plate solar array project. Volume 2: Silicon material

    Science.gov (United States)

    Lutwack, R.

    1986-01-01

    The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

  10. Materials of construction for silicon crystal growth

    Science.gov (United States)

    Leipold, M. H.; Odonnell, T. P.; Hagan, M. A.

    1980-01-01

    The performance of materials for construction and in contact with molten silicon for crystal growth is presented. The basis for selection considers physical compatibility, such as thermal expansion and strength, as well as chemical compatibility as indicated by contamination of the silicon. A number of new high technology materials are included as well as data on those previously used. Emphasis is placed on the sources and processing of such materials in that results are frequently dependent on the way a material is prepared as well as its intrinsic constituents.

  11. LSA Large Area Silicon Sheet Task Continuous Czochralski Process Development

    Science.gov (United States)

    Rea, S. N.

    1979-01-01

    A commercial Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a small, in-situ premelter with attendant silicon storage and transport mechanisms. Using a vertical, cylindrical graphite heater containing a small fused quartz test tube linear from which the molten silicon flowed out the bottom, approximately 83 cm of nominal 5 cm diamter crystal was grown with continuous melt addition furnished by the test tube premelter. High perfection crystal was not obtained, however, due primarily to particulate contamination of the melt. A major contributor to the particulate problem was severe silicon oxide buildup on the premelter which would ultimately drop into the primary melt. Elimination of this oxide buildup will require extensive study and experimentation and the ultimate success of continuous Czochralski depends on a successful solution to this problem. Economically, the continuous Czochralski meets near-term cost goals for silicon sheet material.

  12. Amorphous silicon as high index photonic material

    Science.gov (United States)

    Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

    2009-05-01

    Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

  13. Materials issues in silicon integrated circuit processing

    International Nuclear Information System (INIS)

    Wittmer, M.; Stimmell, J.; Strathman, M.

    1986-01-01

    The symposium on ''Materials Issues in Integrated Circuit Processing'' sought to bring together all of the materials issued pertinent to modern integrated circuit processing. The inherent properties of the materials are becoming an important concern in integrated circuit manufacturing and accordingly research in materials science is vital for the successful implementation of modern integrated circuit technology. The session on Silicon Materials Science revealed the advanced stage of knowledge which topics such as point defects, intrinsic and extrinsic gettering and diffusion kinetics have achieved. Adaption of this knowledge to specific integrated circuit processing technologies is beginning to be addressed. The session on Epitaxy included invited papers on epitaxial insulators and IR detectors. Heteroepitaxy on silicon is receiving great attention and the results presented in this session suggest that 3-d integrated structures are an increasingly realistic possibility. Progress in low temperature silicon epitaxy and epitaxy of thin films with abrupt interfaces was also reported. Diffusion and Ion Implantation were well presented. Regrowth of implant-damaged layers and the nature of the defects which remain after regrowth were discussed in no less than seven papers. Substantial progress was also reported in the understanding of amorphising boron implants and the use of gallium implants for the formation of shallow p/sup +/ -layers

  14. Silicon based light-emitting materials and devices

    International Nuclear Information System (INIS)

    Chen Weide

    1999-01-01

    Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

  15. Carbon Cryogel Silicon Composite Anode Materials for Lithium Ion Batteries

    Science.gov (United States)

    Woodworth James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 10 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-4,9 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  16. Silicon as an anisotropic mechanical material

    DEFF Research Database (Denmark)

    Thomsen, Erik Vilain; Reck, Kasper; Skands, Gustav Erik

    2014-01-01

    While silicon is an anisotropic material it is often in literature treated as an isotropic material when it comes to plate calculations. This leads to considerable errors in the calculated deflection. To overcome this problem, we present an in-depth analysis of the bending behavior of thin crysta...... analytical models involving crystalline plates, such as those often found in the field of micro electro mechanical systems. The effect of elastic boundary conditions is taken into account by using an effective radius of the plate....

  17. Polycrystalline silicon semiconducting material by nuclear transmutation doping

    Science.gov (United States)

    Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

    1978-01-01

    A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

  18. Low cost silicon solar array project large area silicon sheet task: Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

    1977-01-01

    Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

  19. Strained silicon as a new electro-optic material

    DEFF Research Database (Denmark)

    Jacobsen, Rune Shim; Andersen, Karin Nordström; Borel, Peter Ingo

    2006-01-01

    For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized1, 2. The slow progress within silicon optoelectronics, where electronic and optical...... functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon3. Recently, however, a continuous-wave Raman silicon laser was demonstrated4; if an effective modulator could also be realized in silicon, data...... processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top...

  20. Solar cell structure incorporating a novel single crystal silicon material

    Science.gov (United States)

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  1. Report of the Material Control and Material Accounting Task Force

    International Nuclear Information System (INIS)

    1978-03-01

    In September 1977 a Task Force was formed to complete a study of the role of material control and material accounting in NRC's safeguards program. The Task Force's assignment was to: define the roles and objectives of material control and material accounting in the NRC safeguards program; recommend goals for the material control and material accounting systems based on their roles and objectives; assess the extent to which the existing safeguards regulatory base meets or provides the capability to meet the recommended goals; and provide direction for material control and material accounting development, including both near-term and long-term upgrades. The study was limited to domestic nuclear facilities possessing significant amounts of plutonium, uranium-233 or highly enriched uranium in unsealed form. The Task Force findings are reported

  2. High surface area silicon materials: fundamentals and new technology.

    Science.gov (United States)

    Buriak, Jillian M

    2006-01-15

    Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

  3. Process Research on Polycrystalline Silicon Material (PROPSM)

    Science.gov (United States)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  4. Silicon-Based Nanoscale Composite Energetic Materials

    Science.gov (United States)

    2013-02-01

    1193-1211. 9. Krishnamohan, G., E.M. Kurian, and H.R. Rao, Thermal Analysis and Inverse Burning Rate Studies on Silicon-Potassium Nitrate System...reported in a journal paper and appears in the Appendix. Multiscale Nanoporous Silicon Combustion Introduction for nanoporous silicon effort While

  5. Will silicon be the photonic material of the third millenium?

    International Nuclear Information System (INIS)

    Pavesi, L

    2003-01-01

    Silicon microphotonics, a technology which merges photonics and silicon microelectronic components, is rapidly evolving. Many different fields of application are emerging: transceiver modules for optical communication systems, optical bus systems for ULSI circuits, I/O stages for SOC, displays, .... In this review I will give a brief motivation for silicon microphotonics and try to give the state-of-the-art of this technology. The ingredient still lacking is the silicon laser: a review of the various approaches will be presented. Finally, I will try to draw some conclusions where silicon is predicted to be the material to achieve a full integration of electronic and optical devices. (topical review)

  6. Nanostructured silicon for photonics from materials to devices

    CERN Document Server

    Gaburro, Z; Daldosso, N

    2006-01-01

    The use of light to channel signals around electronic chips could solve several current problems in microelectronic evolution including: power dissipation, interconnect bottlenecks, input/output from/to optical communication channels, poor signal bandwidth, etc. It is unfortunate that silicon is not a good photonic material: it has a poor light-emission efficiency and exhibits a negligible electro-optical effect. Silicon photonics is a field having the objective of improving the physical properties of silicon; thus turning it into a photonic material and permitting the full convergence of elec

  7. Silicon radiation detectors: materials and applications

    International Nuclear Information System (INIS)

    Walton, J.T.; Haller, E.E.

    1982-10-01

    Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented

  8. Advanced silicon materials for photovoltaic applications

    CERN Document Server

    Pizzini, Sergio

    2012-01-01

    Today, the silicon feedstock for photovoltaic cells comes from processes which were originally developed for the microelectronic industry. It covers almost 90% of the photovoltaic market, with mass production volume at least one order of magnitude larger than those devoted to microelectronics. However, it is hard to imagine that this kind of feedstock (extremely pure but heavily penalized by its high energy cost) could remain the only source of silicon for a photovoltaic market which is in continuous expansion, and which has a cumulative growth rate in excess of 30% in the last few years. Ev

  9. LSSA large area silicon sheet task continuous Czochralski process development

    Science.gov (United States)

    Rea, S. N.

    1978-01-01

    A Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a premelter to provide molten silicon flow into the primary crucible. The basic furnace is operational and several trial crystals were grown in the batch mode. Numerous premelter configurations were tested both in laboratory-scale equipment as well as in the actual furnace. The best arrangement tested to date is a vertical, cylindrical graphite heater containing small fused silicon test tube liner in which the incoming silicon is melted and flows into the primary crucible. Economic modeling of the continuous Czochralski process indicates that for 10 cm diameter crystal, 100 kg furnace runs of four or five crystals each are near-optimal. Costs tend to asymptote at the 100 kg level so little additional cost improvement occurs at larger runs. For these conditions, crystal cost in equivalent wafer area of around $20/sq m exclusive of polysilicon and slicing was obtained.

  10. Evaluation on electrical resistivity of silicon materials after electron ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 38; Issue 5. Evaluation on ... This research deals with the study of electron beam melting (EBM) methodology utilized in melting silicon material and subsequently discusses on the effect of oxygen level on electrical resistivity change after EBM process. The oxygen ...

  11. Defects and impurities in silicon materials an introduction to atomic-level silicon engineering

    CERN Document Server

    Langouche, Guido

    2015-01-01

    This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

  12. Plasma deposition of amorphous silicon-based materials

    CERN Document Server

    Bruno, Giovanni; Madan, Arun

    1995-01-01

    Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices.

  13. Carbon Nanotube Templated Microfabrication of Porous Silicon-Carbon Materials

    Science.gov (United States)

    Song, Jun; Jensen, David; Dadson, Andrew; Vail, Michael; Linford, Matthew; Vanfleet, Richard; Davis, Robert

    2010-10-01

    Carbon nanotube templated microfabrication (CNT-M) of porous materials is demonstrated. Partial chemical infiltration of three dimensional carbon nanotube structures with silicon resulted in a mechanically robust material, precisely structured from the 10 nm scale to the 100 micron scale. Nanoscale dimensions are determined by the diameter and spacing of the resulting silicon/carbon nanotubes while the microscale dimensions are controlled by lithographic patterning of the CNT growth catalyst. We demonstrate the utility of this hierarchical structuring approach by using CNT-M to fabricate thin layer chromatography (TLC) separations media with precise microscale channels for fluid flow control and nanoscale porosity for high analyte capacity.

  14. Characterization of electrical and optical properties of silicon based materials

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Guobin

    2009-12-04

    In this work, the electrical and luminescence properties of a series of silicon based materials used for photovoltaics, microelectronics and nanoelectronics have been investigated by means of electron beam induced current (EBIC), cathodoluminescence (CL), photoluminescence (PL) and electroluminescence (EL) methods. Photovoltaic materials produced by block casting have been investigated by EBIC on wafers sliced from different parts of the ingot. Various solar cell processings have been compared in parallel wafers by means of EBIC collection efficiency measurements and contrast-temperature C(T) behaviors of the extended defects, i. e. dislocations and grain boundaries (GBs). It was found that the solar cell processing with phosphorus diffusion gettering (PDG) followed with a SiN firing greatly reduces the recombination activity of extended defects at room temperature, and improves the bulk property simultaneously. A remaining activity of the dislocations indicates the limitation of the PDG at extended defects. Abnormal behavior of the dislocation activity after certain solar cell processes was also observed in the region with high dislocation density, the dislocations are activated after certain solar cell processings. In order to evaluate the properties of a thin polycrystalline silicon layer prepared by Al-induced layer exchange (Alile) technique, epitaxially layer grown on silicon substrate with different orientations was used as a model system to investigate the impact by the process temperature and the substrates. EBIC energy dependent collection efficiency measurements reveal an improvement of the epilayer quality with increasing substrate temperature during the growth from 450 C to 650 C, and a decrease of epilayer quality at 700 C. PL measurements on the epitaxially grown Si layer on silicon substrates revealed no characteristic dislocation-related luminescence (DRL) lines at room temperature and 77 K, while in the samples prepared by Alile process, intense

  15. Porous silicon based anode material formed using metal reduction

    Science.gov (United States)

    Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

    2015-09-22

    A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

  16. Coated silicon comprising material for protection against environmental corrosion

    Science.gov (United States)

    Hazel, Brian Thomas (Inventor)

    2009-01-01

    In accordance with an embodiment of the invention, an article is disclosed. The article comprises a gas turbine engine component substrate comprising a silicon material; and an environmental barrier coating overlying the substrate, wherein the environmental barrier coating comprises cerium oxide, and the cerium oxide reduces formation of silicate glass on the substrate upon exposure to corrodant sulfates.

  17. BUILDING MATERIALS AND PRODUCTS BASED ON SILICON MANGANESE SLAGS

    Directory of Open Access Journals (Sweden)

    BOLSHAKOV V. I.

    2016-05-01

    Full Text Available Raising of problem. Currently of particular relevance was given to the matter of introduction in manufacture of building materials and products, resource-saving techniques and technologies; integrated use of raw materials and materials that prevent or significantly reduce their harmful impact on the environment. This allows you to recycle hundreds of thousands of tons of the fiery liquid slags of silicon manganese and to develop effective structural materials that can replace metals, non-metallic building materials of natural origin, concretes, cast stone, plastics and refractories. Purpose. The study of the structure and properties of building materials and products from electric furnace slag of silicon manganese. Conclusion. Slags from the smelting of silicon manganese are classified as acidic. Their lime factor is in the range of 0.47–0.52. The composition of the slag located in the heterogeneous region SiO2 near the line of separation of cristobalite spread to the crystallization of wollastonite, according to the ternary system MnO-CaO-SiO2, which in consideration of their stability, allows the development of technology of building materials (gravel, sand, granulated slag, etc. and products (foundation blocks, road slabs, containers for transportation and storage of hazardous waste, and others.

  18. Hydrogen interactions with silicon-on-insulator materials

    OpenAIRE

    Rivera de Mena, A.J.

    2003-01-01

    The booming of microelectronics in recent decades has been made possible by the excellent properties of the Si/SiO2 interface in oxide on silicon systems.. This semiconductor/insulator combination has proven to be of great value for the semiconductor industry. It has made it possible to continuously increase the number of transistors per chip until the physical limit of integration is now almost reached. Silicon-on-insulator (SOI) materials were early on seen as a step in the logical evolutio...

  19. Process research of non-CZ silicon material

    Science.gov (United States)

    Campbell, R. B.

    1984-01-01

    Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

  20. Development of silicone rubber-type neutron shielding material

    International Nuclear Information System (INIS)

    Do, Jae Bum; Cho, Soo Hang; Kim, Ik Soo; Oh, Seung Chul; Hong, Soon Seok; Noh, Sung Ki; Jeong, Duk Yeon.

    1997-06-01

    Because the exposure to radiation in the nuclear facilities can be fatal to human, it is important to reduce the radiation dose level to a tolerable level. The purpose of this study is to develop highly effective neutron shielding materials for the shipping and storage cask of radioactive materials or in the nuclear/radiation facilities. On this study, we developed silicone rubber based neutron shielding materials and their various material properties, including neutron shielding ability, fire resistance, combustion characteristics, radiation resistance, thermal and mechanical properties were evaluated experimentally. (author). 16 tabs., 17 figs., 25 refs

  1. The dose distributions of γ ray in the silicon in and near the interfaces of silicon and various materials

    International Nuclear Information System (INIS)

    Ba Weizhen; Wu Qingzhi; He Chengfa; Chen Chaoyang

    1996-01-01

    The depth dose distributions of γ ray in the silicon in and near the interfaces of silicon and various materials, such as gold, have been studied. The dose distributions have been compared with equilibrium doses in the homogeneous silicon material, and considerable dose gradient distributions were obtained. In the case of silicon adjacent to high atomic numbered material, dose enhancement effects have been observed in and near the interfaces. The dose gradient distributions were explained by photoelectron effect, Auger effect and secondary electron transport mechanism of the low energy scattering photons

  2. Silicon materials outlook study for 1980-85 calendar years

    Energy Technology Data Exchange (ETDEWEB)

    Costogue, E.; Ferber, R.; Hasbach, W.; Pellin, R.; Yaws, C.

    1979-11-01

    Photovoltaic solar cell arrays converting solar energy into electrical energy can become a cost-effective, alternative energy source provided that an adequate supply of low-priced solar cell materials and automated fabrication techniques are available. Presently, the photovoltaic industry is dependent upon polycrystalline silicon which is produced primarily for the discrete semiconductor device industry. This dependency is expected to continue until DOE-sponsored new technology developments mature. Recent industry forecasts have predicted a limited supply of polycrystalline silicon material and a shortage could occur in the early 80's. The Jet Propulsion Laboratory's Technology Development and Application Lead Center formed an ad hoc committee at JPL, SERI and consultant personnel to conduct interviews with key polycrystalline manufacturers and a large cross-section of single crystal ingot growers and wafer manufacturers. Industry consensus and conclusions reached from the analysis of the data obtained by the committee are reported. The highlight of the study is that there is a high probability of polycrystalline silicon shortage by the end of CY 1982 and a strong seller's market after CY 1981 which will foster price competition for available silicon.

  3. Study of Pellets and Lumps as Raw Materials in Silicon Production from Quartz and Silicon Carbide

    Science.gov (United States)

    Dal Martello, E.; Tranell, G.; Gaal, S.; Raaness, O. S.; Tang, K.; Arnberg, L.

    2011-10-01

    The use of high-purity carbon and quartz raw materials reduces the need for comprehensive refining steps after the silicon has been produced carbothermically in the electric reduction furnace. The current work aims at comparing the reaction mechanisms and kinetics occurring in the inner part of the reduction furnace when pellets or lumpy charge is used, as well as the effect of the raw material mix. Laboratory-scale carbothermic reduction experiments have been carried out in an induction furnace. High-purity silicon carbide and two different high-purity hydrothermal quartzes were charged as raw materials at different molar ratios. The charge was in the form of lumps (size, 2-5 mm) or as powder (size, 10-20 μm), mixed and agglomerated as pellets (size, 1-3 mm) and reacted at 2273 K (2000 °C). The thermal properties of the quartzes were measured also by heating a small piece of quartz in CO atmosphere. The investigated quartzes have different reactivity in reducing atmosphere. The carbothermal reduction experiments show differences in the reacted charge between pellets and lumps as charge material. Solid-gas reactions take place from the inside of the pellets porosity, whereas reactions in lumps occur topochemically. Silicon in pellets is produced mainly in the rim zone. Larger volumes of silicon have been found when using lumpy charge. More SiO is produced when using pellets than for lumpy SiO2 for the same molar ratio and heating conditions. The two SiC polytypes used in the carbothermal reduction experiments as carbon reductants presented different reactivity.

  4. Process research on non-CZ silicon material

    Science.gov (United States)

    1982-01-01

    High risk, high payoff research areas associated with he process for producing photovoltaic modules using non-CZ sheet material are investigated. All investigations are being performed using dendritic web silicon, but all processes are directly applicable to other ribbon forms of sheet material. The technical feasibility of forming front and back junctions in non-CZ silicon using liquid dopant techniques was determined. Numerous commercially available liquid phosphorus and boron dopant solutions are investigated. Temperature-time profiles to achieve N(+) and P(+) sheet resistivities of 60 + or - 10 and 40 + or - s10 ohms per square centimeter respectively are established. A study of the optimal method of liquid dopant application is performed. The technical feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask was also determined.

  5. High mechanical Q-factor measurements on silicon bulk material

    Energy Technology Data Exchange (ETDEWEB)

    Schwarz, Christian; Nawrodt, Ronny; Heinert, Daniel; Schroeter, Anja; Neubert, Ralf; Thuerk, Matthias; Vodel, Wolfgang; Seidel, Paul [Institut fuer Festkoerperphysik, Helmholtzweg 5, D-07743 Jena (Germany); Tuennermann, Andreas [Institut fuer Angewandte Physik, Albert-Einstein-Strasse 15, D-07745 Jena (Germany)

    2008-07-01

    The direct observation of gravitational waves is one of the biggest challenges in science. Current detectors are limited by different kinds of noise. One of the fundamental noise sources is thermal noise arising from the optical components. One of the most promising attempts to reduce the thermal noise contribution in future detectors will be the use of high Q-factor materials at cryogenic temperatures. Silicon seems to be the most interesting material due to its excellent optical and thermal properties. We present high Q-factor measurements on bulk samples of high purity silicon in a temperature range from 5 to 300 K. The sample dimensions vary between 76.2 mm x 12..75 mm. The Q-factor exceeds 4.10{sup 8} at 6 K. The influence of the crystal orientation, doping and the sample preparation on the Q-factor is discussed.

  6. Continuous Czochralski growth: Silicon sheet growth development of the large area sheet task of the low cost silicon solar array project

    Science.gov (United States)

    Johnson, C. M.

    1980-12-01

    The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg of silicon single crystal material 15 cm or greater utilizing one common silicon container material (one crucible) is investigated. A crystal grower that is recharged with a new supply of polysilicon material while still under vacuum and at temperatures above the melting point of silicon is developed. It accepts large polysilicon charges up to 30 kg, grows large crystal ingots (to 15 cm diameter and 25 kg in weight), and holds polysilicon material for recharging (rod or lump) while, at the same time, growing crystal ingots. Special equipment is designed to recharge polysilicon rods, recharge polysilicon lumps, and handle and store large, hot silicon crystal ingots. Many continuous crystal growth runs were performed lasting as long as 109 hours and producing as many as ten crystal ingots, 15 cm with weights progressing to 27 kg.

  7. Silicon Composite Anode Materials for Lithium Ion Batteries Based on Carbon Cryogels and Carbon Paper

    Science.gov (United States)

    Woodworth, James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nanofoams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  8. Carbon Cryogel and Carbon Paper-Based Silicon Composite Anode Materials for Lithium-Ion Batteries

    Science.gov (United States)

    Woodworth, James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 6 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-5 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  9. Materials Chemistry and Performance of Silicone-Based Replicating Compounds.

    Energy Technology Data Exchange (ETDEWEB)

    Brumbach, Michael T.; Mirabal, Alex James; Kalan, Michael; Trujillo, Ana B; Hale, Kevin

    2014-11-01

    Replicating compounds are used to cast reproductions of surface features on a variety of materials. Replicas allow for quantitative measurements and recordkeeping on parts that may otherwise be difficult to measure or maintain. In this study, the chemistry and replicating capability of several replicating compounds was investigated. Additionally, the residue remaining on material surfaces upon removal of replicas was quantified. Cleaning practices were tested for several different replicating compounds. For all replicating compounds investigated, a thin silicone residue was left by the replica. For some compounds, additional inorganic species could be identified in the residue. Simple solvent cleaning could remove some residue.

  10. Silicon-organic pigment material hybrids for photovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Mayer, T.; Weiler, U.; Jaegermann, W. [Institute of Materials Science, Darmstadt University of Technology, Petersenstreet 23, D-64287 Darmstadt (Germany); Kelting, C.; Schlettwein, D. [Institute for Applied Physics, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Makarov, S.; Woehrle, D. [Institute of Organic and Macromolecular Chemistry, University Bremen, Leobener Street NW II, D-28359 Bremen (Germany); Abdallah, O.; Kunst, M. [Department Solar Energy, Hahn-Meitner-Institute, D-14109 Berlin (Germany)

    2007-12-14

    Hybrid materials of silicon and organic dyes have been investigated for possible application as photovoltaic material in thin film solar cells. High conversion efficiency is expected from the combination of the advantages of organic dyes for light absorption and those of silicon for charge carrier separation and transport. Low temperature remote hot wire chemical vapor deposition (HWCVD) was developed for microcrystalline silicon ({mu}c-Si) deposition using SiH{sub 4}/H{sub 2} mixtures. As model dyes zinc phthalocyanines have been evaporated from Knudsen type sources. Layers of dye on {mu}c-Si and {mu}c-Si on dye films, and composites of simultaneously and sequentially deposited Si and dye have been prepared and characterized. Raman, absorption, and photoemission spectroscopy prove the stability of the organic molecules against the rough HWCVD-Si process. Transient microwave conductivity (TRMC) indicates good electronic quality of the {mu}c-Si matrix. Energy transfer from dye to Si is indicated indirectly by luminescence and directly by photoconductivity measurements. F{sub x}ZnPc pigments with x=0,4,8,16 have been synthesized, purified and adsorbed onto H-terminated Si(1 1 1) for electronic state line up determination by photoelectron spectroscopy. For x=4 and 8 the dye frontier orbitals line up symmetrically versus the Si energy gap offering similar energetic driving forces for electron and hole injection, which is considered optimum for bulk sensitization and indicates a direction to improve the optoelectronic coupling of the organic dyes to silicon. (author)

  11. A Task-Based Approach to Materials Development

    Science.gov (United States)

    Nunan, David

    2010-01-01

    The purpose of this chapter is to present a task-based approach to materials development. In the first part of the chapter, I sketch out the evolution of task based language teaching, drawing on a distinction between synthetic and analytical approaches to syllabus design first articulated by Wilkins (1976).

  12. Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

    Science.gov (United States)

    Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

    2015-09-02

    In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

  13. Characterization of thin-film silicon materials and solar cells through numerical modeling

    NARCIS (Netherlands)

    Pieters, B.E.

    2008-01-01

    At present most commercially available solar cells are made of crystalline silicon (c-Si). The disadvantages of crystalline silicon solar cells are the high material cost and energy consumption during production. A cheaper alternative can be found in thin-film silicon solar cells. The thin-film

  14. Silicon carbide composites as fusion power reactor structural materials

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L., E-mail: SneadLL@ORNL.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Nozawa, T. [Fusion Research and Development Directorate, Japan Atomic Energy Agency, 2-4 Shirakata Shirane, Tokai, Ibaraki 319-1195 (Japan); Ferraris, M. [Politecnico di Torino-DISMIC c. Duca degli Abruzzi, 24I-10129 Torino (Italy); Katoh, Y. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Shinavski, R. [Hypertherm HTC, 18411 Gothard St., Units A/B/C, Huntington Beach, CA 92648 (United States); Sawan, M. [University of Wisconsin, Madison 417 Engineering Research Building, 1500 Engineering Drive Madison, WI 53706-1687 (United States)

    2011-10-01

    Silicon carbide was first proposed as a low activation fusion reactor material in the mid 1970s. However, serious development of this material did not begin until the early 1990s, driven by the emergence of composite materials that provided enhanced toughness and an implied ability to use these typically brittle materials in engineering application. In the decades that followed, SiC composite system was successfully transformed from a poorly performing curiosity into a radiation stable material of sufficient maturity to be considered for near term nuclear and non-nuclear systems. In this paper the recent progress in the understanding and of basic phenomenon related to the use of SiC and SiC composite in fusion applications will be presented. This work includes both fundamental radiation effects in SiC and engineering issues such as joining and general materials properties. Additionally, this paper will briefly discuss the technological gaps remaining for the practical application of this material system in fusion power devices such as DEMO and beyond.

  15. Thermoelectric materials evaluation program. Quarterly technical task report No. 46

    International Nuclear Information System (INIS)

    Hampl, E.F. Jr.

    1976-02-01

    This forty-sixth Technical Task Report prepared under contract E(11-1)-2331 with the U.S. AEC and U.S. ERDA covers the performance period from October 1, 1975, to December 31, 1975. Highlights include the following tasks: N-type material development (material synthesis--gadolinium selenide compositions; material analyses; material processing; element contacting; ingradient compatibility and life testing; mechanical property characterization), TPM-217 P-type characterization (material preparation and analyses; element contacting; thermodynamic stability; isothermal chemical compatibility; ingradient compatibility and ingradient life testing; performance mapping of contacted and noncontacted elements; high-temperature partitioned P-legs), couple development (design and development of TPM-217/gadolinium selenide rare earth chalcogenide couple; design and development of TPM-217/3N-PbTe couples; advanced generator concepts), module development, liaison with Jet Propulsion Laboratory and material supply, liaison with GGA, and program management. 24 figures, 27 tables

  16. Electricity from photovoltaic solar cells: Flat-Plate Solar Array Project final Report. Volume II: Silicon material

    OpenAIRE

    Lutwack, R.

    1986-01-01

    The Flat-Plate Solar Array (FSA) Project, funded by the U.S. Government and managed by the Jet Propulsion Laboratory, was formed in 1975 to develop the module/array technology needed to attain widespread terrestrial use of photovoltaics by 1985. To accomplish this, the FSA Project established and managed an Industry, University, and Federal Government Team to perform the needed research and development. The goal of the Silicon Material Task, a part of the FSA Project, was to develop and ...

  17. Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

    International Nuclear Information System (INIS)

    Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.

    1997-12-01

    Epitaxial grown thick layers (≥ 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 x 10 12 cm -3 ) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E p = 24 GeV) with a fluence of 1.5 x 10 11 cm -2 , no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ''sinking'' process, however, becomes non-effective at high radiation fluences (10 14 cm -2 ) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 x 10 14 cm -2 the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 x 10 12 cm -3 after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon

  18. Why silicon is and will remain the dominant photovoltaic material

    Science.gov (United States)

    Singh, Rajendra

    2009-07-01

    Rising demands of energy in emerging economies, coupled with the green house gas emissions related problems around the globe have provided a unique opportunity of exploiting the advantages offered by photovoltaic (PV) systems for green energy electricity generation. Similar to cell phones, power generated by PV systems can reach over two billion people worldwide who have no access to clean energy. Only silicon based PV devices meet the low-cost manufacturing criterion of clean energy conversion (abundance of raw material and no environmental health and safety issues). The use of larger size glass substrates and manufacturing techniques similar to the ones used by the liquid crystal display industry and the large scale manufacturing of amorphous silicon thin films based modules (~ GW per year manufacturing at a single location) can lead to installed PV system cost of $3/Wp. This will open a huge market for grid connected PV systems and related markets. With further research and development, this approach can provide $2/Wp installed PV system costs in the next few years. At this cost level, PV electricity generation is competitive with any other technology, and PV power generation can be a dominant electricity generation technology in the 21st century.

  19. Resistivity measurements on the neutron irradiated detector grade silicon materials

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zheng

    1993-11-01

    Resistivity measurements under the condition of no or low electrical field (electrical neutral bulk or ENB condition) have been made on various device configurations on detector grade silicon materials after neutron irradiation. Results of the measurements have shown that the ENB resistivity increases with neutron fluence ({Phi}{sub n}) at low {phi}{sub n} (<10{sup 13} n/cm{sup 2}) and saturates at a value between 300 and 400 k{Omega}-cm at {phi}{sub n} {approximately}10{sup 13} n/cm{sup 2}. Meanwhile, the effective doping concentration N{sub eff} in the space charge region (SCR) obtained from the C-V measurements of fully depleted p{sup +}/n silicon junction detectors has been found to increase nearly linearly with {phi}{sub n} at high fluences ({phi}{sub n} > 10{sup 13} n/cm{sup 2}). The experimental results are explained by the deep levels crossing the Fermi level in the SCR and near perfect compensation in the ENB by all deep levels, resulting in N{sub eff} (SCR) {ne} n or p (free carrier concentrations in the ENB).

  20. Additive Manufacturing of Overhang Structures Using Moisture-Cured Silicone with Support Material

    Directory of Open Access Journals (Sweden)

    Mohan Muthusamy

    2018-04-01

    Full Text Available Additive manufacturing (AM of soft materials has a wide variety of applications, such as customized or wearable devices. Silicone is one popular material for these applications given its favorable material properties. However, AM of silicone parts with overhang structures remains challenging due to the soft nature of the material. Overhang structures are the areas where there is no underlying structure. Typically, a support material is used and built in the underlying space so that the overhang structures can be built upon it. Currently, there is no support structure that has been used for AM of silicone. The goal of this study is to develop an AM process to fabricate silicone parts with overhang structures. We first identified and confirmed poly-vinyl alcohol (PVA, a water-soluble material, as a suitable support material for silicone by evaluating the adhesion strength between silicone and PVA. Process parameters for the support material, including critical overhang angle and minimum infill density for the support material, are identified. However, overhang angle alone is not the only determining factor for support material. As silicone is a soft material, it deflects due to its own weight when the height of the overhang structure increases. A finite element model is developed to estimate the critical overhang height paired with different overhang angles to determine whether the use of support material is needed. Finally, parts with overhang structures are printed to demonstrate the capability of the developed process.

  1. Optimization of Fluorescent Silicon Nano material Production Using Peroxide/ Acid/ Salt Technique

    International Nuclear Information System (INIS)

    Abuhassan, L.H.

    2009-01-01

    Silicon nano material was prepared using the peroxide/ acid/ salt technique in which an aqueous silicon-based salt solution was added to H 2 O 2 / HF etchants. In order to optimize the experimental conditions for silicon nano material production, the amount of nano material produced was studied as a function of the volume of the silicon salt solution used in the synthesis. A set of samples was prepared using: 0, 5, 10, 15, and 20 ml of an aqueous 1 mg/ L metasilicate solution. The area under the corresponding peaks in the infrared (ir) absorption spectra was used as a qualitative indicator to the amount of the nano material present. The results indicated that using 10 ml of the metasilicate solution produced the highest amount of nano material. Furthermore, the results demonstrated that the peroxide/ acid/ salt technique results in the enhancement of the production yield of silicon nano material at a reduced power demand and with a higher material to void ratio. A model in which the silicon salt forms a secondary source of silicon nano material is proposed. The auxiliary nano material is deposited into the porous network causing an increase in the amount of nano material produced and a reduction in the voids present. Thus a reduction in the resistance of the porous layer, and consequently reduction in the power required, are expected. (author)

  2. Comparison of silicone and spin-on glass packaging materials for light-emitting diode encapsulation

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Liann-Be; Pan, Ke-Wei; Yen, Chia-Yi [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Jeng, Ming-Jer, E-mail: mjjeng@mail.cgu.edu.tw [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Wu, Chun-Te; Hu, Sung-Cheng; Kuo, Yang-Kuao [Chemical Systems Research Division, Chung-Shan Institute of Science and Technology Armaments Bureau, MND, Taoyuan, Taiwan (China)

    2014-11-03

    Traditional white light light-emitting diode (LED) encapsulation is performed by mixed phosphors and silicone coating on LED die. However, this encapsulation with silicone coating incurs overheated temperatures and yellowing problem. Therefore, this work attempts to replace silicone paste by using spin-on-glass (SOG) materials. Experimental results indicate that although initial brightness of SOG-based packaging is lower than that of silicone packaging, its light attenuation is significantly lower than that of silicone for a long lighting time. After the LED power is turned on for 12 h, the brightness of LED with silicone and SOG material packaging decreases from 84 to 48 lm and 73 to 59 lm, respectively. Therefore, SOG material provides an alternative packaging solution for high power LED lighting applications. - Highlights: • Spin-on-glass (SOG) material was used to replace silicone coating for LED packaging. • Initial brightness of SOG packaging is lower than that of silicone packaging. • Over time, light attenuation in SOG is much lower than that in silicone. • Color rendering index and brightness of LED packaging was optimized by Taguchi method.

  3. Analyses and characterization of fossil carbonaceous materials for silicon production

    Energy Technology Data Exchange (ETDEWEB)

    Myrvaagnes, Viktor

    2008-01-15

    Production of high silicon alloys is carried out in submerged arc furnaces by reduction of silicon bearing oxides (typically quartz) with carbon materials. Carbonaceous materials like coal, coke, charcoal and woodchips are commonly used as reduction materials in the process. Primarily based on historical prices of charcoal compared to fossil reduction materials, the Norwegian Ferroalloy Industry has mostly been using coal and coke (char) as the source of carbon. From a process point of view, the most important role of the carbonaceous material is to react with SiO gas to produce SiC. The ability of the reduction materials to react with SiO gas can be measured and the value is recognized as the reactivity of the carbon source. Reactivity is one of the most important parameters in the smelting process and is commonly acknowledged to strongly affect both productivity and specific energy consumption. The main objectives of this work has been to establish methods to characterize the material properties of fossil carbonaceous reduction materials used in the silicon process and to evaluated how these properties affect the reactivity towards SiO gas. In order to accomplish these objectives, three run of mine (ROM) single seam coals which are particularly well suited for ferroalloy production were selected. Two Carboniferous coals from USA (Blue Gem) and Poland (Staszic) with similar rank, but significantly different composition as well as a Permian coal from Australia (Peak Downs) have been characterized by chemical- and petrographical methods. Blue Gem is a homogeneous coal, low in mineral inclusions and macerals of the inertinite group and determined to have a random vitrinite reflectance of 0.71 %. Staszic has a similar reflectance of vitrinite (0.72 %), but is determined to be a very inhomogeneous coal with both inertinite macerals and minerals embedded in the vitrinite matrix. Peak Downs has a random reflectance of vitrinite of 1.32 % and is hence the coal sample of

  4. Research and Application Progress of Silicone Rubber Materials in Aviation

    Directory of Open Access Journals (Sweden)

    HUANG Yanhua

    2016-06-01

    Full Text Available The research progress of heat resistance, cold resistance, electrical conductivity and damping properties of aviation silicone rubber were reviewed in this article. The heat resistance properties of silicone rubber can be enhanced by changing the molecular structure (main chain, end-group, side chain and molecular weight of the gum and adding special heat-resistance filler. The cold resistance of aviation silicone rubber can be enhanced by adjusting the side chain molecular structure of the gum and the content of different gum chain. The electrical conductivity of silicone rubber can be improved by optimizing, blending and dispersing of conductive particles. The damping property of silicone rubber can be improved by designing and synthesizing of high-molecular polysiloxane damping agent. Furthermore, the application of aviation silicone rubber used in high-low temperature seal, electrical conduction and vibration damping technology are also summarized, and the high performance (for example long-term high temperature resistance, ultralow temperature resistance, high electromagnetic shelding, long-term fatigue resistance vibration damping, quasi constant modulus and so on of special silicone rubber is the future direction of aviation silicone rubber.

  5. Silicon carbide and its use as a radiation detector material

    International Nuclear Information System (INIS)

    Nava, F; Bertuccio, G; Cavallini, A; Vittone, E

    2008-01-01

    We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A review of the characterization methods and electrical contacting issues and how these are related to detector performance is presented. The most recent data on charge transport parameters across the Schottky barrier and how these are related to radiation spectrometer performance are presented. Experimental results on pixel detectors having equivalent noise energies of 144 eV FWHM (7.8 electrons rms) and 196 eV FWHM at +27 °C and +100 °C, respectively, are reported. Results of studying the radiation resistance of 4H–SiC are analysed. The data on the ionization energies, capture cross section, deep-level centre concentrations and their plausible structures formed in SiC as a result of irradiation with various particles are reviewed. The emphasis is placed on the study of the 1 MeV neutron irradiation, since these thermal particles seem to play the main role in the detector degradation. An accurate electrical characterization of the induced deep-level centres by means of PICTS technique has allowed one to identify which play the main role in the detector degradation. (topical review)

  6. A study on the development of silicon carbide materials for nuclear application

    International Nuclear Information System (INIS)

    Won, Dong Yeon; Kim, Chan Jung; Lee, Jae Choon; Kim, Joon Hyung; Lim, Kyung Soo; Kim, Ki Baik

    1987-12-01

    Silicon carbide was synthesized by reaction sintering process from carbon and silicon powders as starting materials. The effects of two processing parameters, i.e., heat treatment time and temperature, were examined (to characterize the reaction sintering process) in terms of the degree of reaction and phase developed during heat treatment. The final products after reaction of silicon and carbon powders were identified as β-SiC having ZnS crystal structure. Sintering of cordierite ceramics which was used as an high temperature inorganic binder to fabricate ceramically bound silicon carbide, and phase identification of the sintered ceramics by X-ray powder diffraction techniques. (Author)

  7. Material Properties of Laser-Welded Thin Silicon Foils

    Directory of Open Access Journals (Sweden)

    M. T. Hessmann

    2013-01-01

    Full Text Available An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1 laser spot welding with low constant feed speed, (2 laser line welding, and (3 keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.

  8. Surface Coating of Gypsum-Based Molds for Maxillofacial Prosthetic Silicone Elastomeric Material: The Surface Topography.

    Science.gov (United States)

    Khalaf, Salah; Ariffin, Zaihan; Husein, Adam; Reza, Fazal

    2015-07-01

    This study aimed to compare the surface roughness of maxillofacial silicone elastomers fabricated in noncoated and coated gypsum materials. This study was also conducted to characterize the silicone elastomer specimens after surfaces were modified. A gypsum mold was coated with clear acrylic spray. The coated mold was then used to produce modified silicone experimental specimens (n = 35). The surface roughness of the modified silicone elastomers was compared with that of the control specimens, which were prepared by conventional flasking methods (n = 35). An atomic force microscope (AFM) was used for surface roughness measurement of silicone elastomer (unmodified and modified), and a scanning electron microscope (SEM) was used to evaluate the topographic conditions of coated and noncoated gypsum and silicone elastomer specimens (unmodified and modified) groups. After the gypsum molds were characterized, the fabricated silicone elastomers molded on noncoated and coated gypsum materials were evaluated further. Energy-dispersive X-ray spectroscopy (EDX) analysis of gypsum materials (noncoated and coated) and silicone elastomer specimens (unmodified and modified) was performed to evaluate the elemental changes after coating was conducted. Independent t test was used to analyze the differences in the surface roughness of unmodified and modified silicone at a significance level of p SEM analysis results showed evident differences in surface smoothness. EDX data further revealed the presence of the desired chemical components on the surface layer of unmodified and modified silicone elastomers. Silicone elastomers with lower surface roughness of maxillofacial prostheses can be obtained simply by coating a gypsum mold. © 2014 by the American College of Prosthodontists.

  9. The chemo-mechanical effect of cutting fluid on material removal in diamond scribing of silicon

    Science.gov (United States)

    Kumar, Arkadeep; Melkote, Shreyes N.

    2017-07-01

    The mechanical integrity of silicon wafers cut by diamond wire sawing depends on the damage (e.g., micro-cracks) caused by the cutting process. The damage type and extent depends on the material removal mode, i.e., ductile or brittle. This paper investigates the effect of cutting fluid on the mode of material removal in diamond scribing of single crystal silicon, which simulates the material removal process in diamond wire sawing of silicon wafers. We conducted scribing experiments with a diamond tipped indenter in the absence (dry) and in the presence of a water-based cutting fluid. We found that the cutting mode is more ductile when scribing in the presence of cutting fluid compared to dry scribing. We explain the experimental observations by the chemo-mechanical effect of the cutting fluid on silicon, which lowers its hardness and promotes ductile mode material removal.

  10. Material and Energy Flows Associated with Select Metals in GREET 2. Molybdenum, Platinum, Zinc, Nickel, Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Benavides, Pahola T. [Argonne National Lab. (ANL), Argonne, IL (United States); Dai, Qiang [Argonne National Lab. (ANL), Argonne, IL (United States); Sullivan, John L. [Argonne National Lab. (ANL), Argonne, IL (United States); Kelly, Jarod C. [Argonne National Lab. (ANL), Argonne, IL (United States); Dunn, Jennifer B. [Argonne National Lab. (ANL), Argonne, IL (United States)

    2015-09-01

    In this work, we analyzed the material and energy consumption from mining to production of molybdenum, platinum, zinc, and nickel. We also analyzed the production of solar- and semiconductor-grade silicon. We described new additions to and expansions of the data in GREET 2. In some cases, we used operating permits and sustainability reports to estimate the material and energy flows for molybdenum, platinum, and nickel, while for zinc and silicon we relied on information provided in the literature.

  11. Review of New Technology for Preparing Crystalline Silicon Solar Cell Materials by Metallurgical Method

    Science.gov (United States)

    Li, Man; Dai, Yongnian; Ma, Wenhui; Yang, Bin; Chu, Qingmei

    2017-11-01

    The goals of greatly reducing the photovoltaic power cost and making it less than that of thermal power to realize photovoltaic power grid parity without state subsidies are focused on in this paper. The research status, key technologies and development of the new technology for preparing crystalline silicon solar cell materials by metallurgical method at home and abroad are reviewed. The important effects of impurities and defects in crystalline silicon on its properties are analysed. The importance of new technology on reducing production costs and improving its quality to increase the cell conversion efficiency are emphasized. The previous research results show that the raw materials of crystalline silicon are extremely abundant. The product of crystalline silicon can meet the quality requirements of solar cell materials: Si ≥ 6 N, P 1 Ω cm, minority carrier life > 25 μs cell conversion efficiency of about 19.3%, the product costs energy consumption energy consumption, low carbon and sustainable development are prospected.

  12. Silicon integrated circuits advances in materials and device research

    CERN Document Server

    Kahng, Dawon

    1981-01-01

    Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, an

  13. Soft silicone based interpenetrating networks as materials for actuators

    DEFF Research Database (Denmark)

    Yu, Liyun; Gonzalez, Lidia; Hvilsted, Søren

    2014-01-01

    A new approach based on silicone interpenetrating networks with orthogonal chemistries has been investigated with focus on developing soft and flexible elastomers with high energy densities and small viscous losses. The interpenetrating networks are made as simple two pot mixtures...... as for the commercial available silylation based elastomers such as Elastosil RT625. The resulting interpenetrating networks are formulated to be softer than RT625 to increase the actuation caused when applying a voltage due to their softness combined with the significantly higher permittivity than the pure silicone...

  14. Material properties that predict preservative uptake for silicone hydrogel contact lenses.

    Science.gov (United States)

    Green, J Angelo; Phillips, K Scott; Hitchins, Victoria M; Lucas, Anne D; Shoff, Megan E; Hutter, Joseph C; Rorer, Eva M; Eydelman, Malvina B

    2012-11-01

    To assess material properties that affect preservative uptake by silicone hydrogel lenses. We evaluated the water content (using differential scanning calorimetry), effective pore size (using probe penetration), and preservative uptake (using high-performance liquid chromatography with spectrophotometric detection) of silicone and conventional hydrogel soft contact lenses. Lenses grouped similarly based on freezable water content as they did based on total water content. Evaluation of the effective pore size highlighted potential differences between the surface-treated and non-surface-treated materials. The water content of the lens materials and ionic charge are associated with the degree of preservative uptake. The current grouping system for testing contact lens-solution interactions separates all silicone hydrogels from conventional hydrogel contact lenses. However, not all silicone hydrogel lenses interact similarly with the same contact lens solution. Based upon the results of our research, we propose that the same material characteristics used to group conventional hydrogel lenses, water content and ionic charge, can also be used to predict uptake of hydrophilic preservatives for silicone hydrogel lenses. In addition, the hydrophobicity of silicone hydrogel contact lenses, although not investigated here, is a unique contact lens material property that should be evaluated for the uptake of relatively hydrophobic preservatives and tear components.

  15. Mathematical model of silicon smelting process basing on pelletized charge from technogenic raw materials

    Science.gov (United States)

    Nemchinova, N. V.; Tyutrin, A. A.; Salov, V. M.

    2018-03-01

    The silicon production process in the electric arc reduction furnaces (EAF) is studied using pelletized charge as an additive to the standard on the basis of the generated mathematical model. The results obtained due to the model will contribute to the analysis of the charge components behavior during melting with the achievement of optimum final parameters of the silicon production process. The authors proposed using technogenic waste as a raw material for the silicon production in a pelletized form using liquid glass and aluminum production dust from the electrostatic precipitators as a binder. The method of mathematical modeling with the help of the ‘Selector’ software package was used as a basis for the theoretical study. A model was simulated with the imitation of four furnace temperature zones and a crystalline silicon phase (25 °C). The main advantage of the created model is the ability to analyze the behavior of all burden materials (including pelletized charge) in the carbothermic process. The behavior analysis is based on the thermodynamic probability data of the burden materials interactions in the carbothermic process. The model accounts for 17 elements entering the furnace with raw materials, electrodes and air. The silicon melt, obtained by the modeling, contained 91.73 % wt. of the target product. The simulation results showed that in the use of the proposed combined charge, the recovery of silicon reached 69.248 %, which is in good agreement with practical data. The results of the crystalline silicon chemical composition modeling are compared with the real silicon samples of chemical analysis data, which showed the results of convergence. The efficiency of the mathematical modeling methods in the studying of the carbothermal silicon obtaining process with complex interphase transformations and the formation of numerous intermediate compounds using a pelletized charge as an additive to the traditional one is shown.

  16. Application of neutron transmutation doping method to initially p-type silicon material.

    Science.gov (United States)

    Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

    2009-01-01

    The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

  17. Microstructural Characterization of Reaction-Formed Silicon Carbide Ceramics. Materials Characterization

    Science.gov (United States)

    Singh, M.; Leonhardt, T. A.

    1995-01-01

    Microstructural characterization of two reaction-formed silicon carbide ceramics has been carried out by interference layering, plasma etching, and microscopy. These specimens contained free silicon and niobium disilicide as minor phases with silicon carbide as the major phase. In conventionally prepared samples, the niobium disilicide cannot be distinguished from silicon in optical micrographs. After interference layering, all phases are clearly distinguishable. Back scattered electron (BSE) imaging and energy dispersive spectrometry (EDS) confirmed the results obtained by interference layering. Plasma etching with CF4 plus 4% O2 selectively attacks silicon in these specimens. It is demonstrated that interference layering and plasma etching are very useful techniques in the phase identification and microstructural characterization of multiphase ceramic materials.

  18. Hydrogen interactions with silicon-on-insulator materials

    NARCIS (Netherlands)

    Rivera de Mena, A.J.

    2003-01-01

    The booming of microelectronics in recent decades has been made possible by the excellent properties of the Si/SiO2 interface in oxide on silicon systems.. This semiconductor/insulator combination has proven to be of great value for the semiconductor industry. It has made it possible to continuously

  19. Plasmonic silicon solar cells : Impact of material quality and geometry

    NARCIS (Netherlands)

    Pahud, C.; Isabella, O.; Naqavi, A.; Haug, F.J.; Zeman, M.; Herzig, H.P.; Ballif, C.

    2013-01-01

    We study n-i-p amorphous silicon solar cells with light-scattering nanoparticles in the back reflector. In one configuration, the particles are fully embedded in the zinc oxide buffer layer; In a second configuration, the particles are placed between the buffer layer and the flat back electrode. We

  20. SiC-Based Composite Materials Obtained by Siliconizing Carbon Matrices

    Science.gov (United States)

    Shikunov, S. L.; Kurlov, V. N.

    2017-12-01

    We have developed a method for fabrication of parts of complicated configuration from composite materials based on SiC ceramics, which employs the interaction of silicon melt with the carbon matrix having a certain composition and porosity. For elevating the operating temperatures of ceramic components, we have developed a method for depositing protective silicon-carbide coatings that is based on the interaction of the silicon melt and vapor with carbon obtained during thermal splitting of hydrocarbon molecules. The new structural ceramics are characterized by higher operating temperatures; chemical stability; mechanical strength; thermal shock, wear and radiation resistance; and parameters stability.

  1. LSA Large Area Silicon Sheet Task. Continuous Liquid Feed Czochralski Growth. [for solar cell fabrication

    Science.gov (United States)

    Fiegl, G.

    1979-01-01

    The design and development of equipment and processes to demonstrate continuous growth of crystals by the Czochralski method suitable for producing single silicon crystals for use in solar cells is presented. The growth of at least 150 kg of mono silicon crystal, 150 mm in diameter is continuous from one growth container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a meltdown system with a continuous solid silicon feed mechanism and a liquid transfer system, with associated automatic feedback controls is discussed. Due to the silicon monoxide build up in the furnace and its retarding effect on crystal growth the furnace conversion for operation in the low pressure range is described. Development of systems for continuous solid recharging of the meltdown chamber for various forms of poly silicon is described.

  2. Progress in Studies on Carbon and Silicon Carbide Nanocomposite Materials

    International Nuclear Information System (INIS)

    Xiao, P.; Chen, J.; Xian-feng, X.

    2010-01-01

    Silicon carbide nanofiber and carbon nanotubes are introduced. The structure and application of nanotubers (nanofibers) in carbon/carbon composites are emphatically presented. Due to the unique structure of nanotubers (nanofibers), they can modify the microstructure of pyrocarbon and induce the deposition of pyrocarbon with high text in carbon/carbon composites. So the carbon/carbon composites modified by CNT/CNF have more excellent properties.

  3. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    Energy Technology Data Exchange (ETDEWEB)

    Ghulinyan, M., E-mail: ghulinyan@fbk.eu [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Bernard, M.; Bartali, R. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Deptartment of Physics, University of Trento, I-38123 Povo (Italy); Pucker, G. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy)

    2015-12-30

    Highlights: • Photoresist adhesion induces the formation of complex etch profiles in dielectrics. • Hydrofluoric acid etching of silica glass and silicon nitride materials was studied. • The phenomenon has been modeled in analogy with sonic boom propagation. • The material etch rate and resist adhesion/erosion define the final profile. - Abstract: In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  4. Study on photon sensitivity of silicon diodes related to materials used for shielding

    International Nuclear Information System (INIS)

    Moiseev, T.

    1999-01-01

    Large area silicon diodes used in electronic neutron dosemeters have a significant over-response to X- and gamma-rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diode's active area and strongly affects the neutron sensitivity of such dosemeters. Since silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon-induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low-energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X- and gamma rays energy range is proposed by designing a composed photon filter. (author)

  5. Study on Photon Sensitivity of Silicon Diodes Related to Materials Used for Shielding

    International Nuclear Information System (INIS)

    Moiseev, T.

    2000-01-01

    Large area Silicon diodes used in electronic neutron dosemeters have a significant over-response to X and gamma rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diodes active area and strongly affects the neutron sensitivity of such dosemeters. Since Silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X and gamma rays energy range is proposed by designing a composed photon filter. (author)

  6. ESP – Data from Restarted Life Tests of Various Silicon Materials

    Energy Technology Data Exchange (ETDEWEB)

    Schneider, Jim

    2010-10-06

    Current funding has allowed the restart of testing of various silicone materials placed in Life Tests or Aging Studies from past efforts. Some of these materials have been in test since 1982, with no testing for approximately 10 years, until funding allowed the restart in FY97. Charts for the various materials at different thickness, compression, and temperature combinations illustrate trends for the load-bearing properties of the materials.

  7. Large area sheet task. Advanced dendritic web growth development. [silicon films

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Meier, D.; Frantti, E.; Schruben, J.

    1981-01-01

    The development of a silicon dendritic web growth machine is discussed. Several refinements to the sensing and control equipment for melt replenishment during web growth are described and several areas for cost reduction in the components of the prototype automated web growth furnace are identified. A circuit designed to eliminate the sensitivity of the detector signal to the intensity of the reflected laser beam used to measure melt level is also described. A variable speed motor for the silicon feeder is discussed which allows pellet feeding to be accomplished at a rate programmed to match exactly the silicon removed by web growth.

  8. Silicon carbide-silicon as a support material for oxygen evolution reaction in PEM steam electrolysers

    DEFF Research Database (Denmark)

    Nikiforov, Aleksey; Petrushina, Irina; Christensen, Erik

    cells. In the present work a commercial SiC-Si, produced by the Acheson process, with a fraction of free silicon around 20% wt. was investigated as a catalyst support for anode electrocatalyst in PEM steam electrolysers. This electrocatalyst system was characterized using several techniques such as XRD......, cyclic voltammetry, SEM, EDX and steady state electrochemical polarisation in a working PEM steam electrolyser. Several SiC-Si-IrO2 electrodes have been prepared and tested. The iridium oxide content at the electrode active layer varied from x=0.2 to x=1, corresponding to the general formula (1-x...... for phosphoric acid doped membrane steam electrolysers....

  9. Macroscopic results for a novel oxygenated silicon material

    International Nuclear Information System (INIS)

    Watts, S.J.; Da Via', C.; Karpenko, A.

    2002-01-01

    High-resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O 2i ) concentration. Deep level transient spectroscopy measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4 kΩ cm, with an oxygen concentration of 10 15 and 10 17 cm -3 . Results for doping changes, leakage current and annealing behaviour after irradiation with 24 GeV/c protons are shown

  10. Process research of non-Czochralski silicon material

    Science.gov (United States)

    Campbell, R. B.

    1986-01-01

    Simultaneous diffusion of liquid precursors containing phosphorus and boron into dendritic web silicon to form solar cell structures was investigated. A simultaneous junction formation techniques was developed. It was determined that to produce high quality cells, an annealing cycle (nominal 800 C for 30 min) should follow the diffusion process to anneal quenched-in defects. Two ohm-cm n-base cells were fabricated with efficiencies greater than 15%. A cost analysis indicated that the simultansous diffusion process costs can be as low as 65% of the costs of the sequential diffusion process.

  11. Macroscopic results for a novel oxygenated silicon material

    CERN Document Server

    Watts, S J; Karpenko, A

    2002-01-01

    High-resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O sub 2 sub i) concentration. Deep level transient spectroscopy measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4 k OMEGA cm, with an oxygen concentration of 10 sup 1 sup 5 and 10 sup 1 sup 7 cm sup - sup 3. Results for doping changes, leakage current and annealing behaviour after irradiation with 24 GeV/c protons are shown.

  12. Implementation Challenges for Sintered Silicon Carbide Fiber Bonded Ceramic Materials for High Temperature Applications

    Science.gov (United States)

    Singh, M.

    2011-01-01

    During the last decades, a number of fiber reinforced ceramic composites have been developed and tested for various aerospace and ground based applications. However, a number of challenges still remain slowing the wide scale implementation of these materials. In addition to continuous fiber reinforced composites, other innovative materials have been developed including the fibrous monoliths and sintered fiber bonded ceramics. The sintered silicon carbide fiber bonded ceramics have been fabricated by the hot pressing and sintering of silicon carbide fibers. However, in this system reliable property database as well as various issues related to thermomechanical performance, integration, and fabrication of large and complex shape components has yet to be addressed. In this presentation, thermomechanical properties of sintered silicon carbide fiber bonded ceramics (as fabricated and joined) will be presented. In addition, critical need for manufacturing and integration technologies in successful implementation of these materials will be discussed.

  13. Development of advanced methods for continuous Czochralski growth. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

    Science.gov (United States)

    Wolfson, R. G.; Sibley, C. B.

    1978-01-01

    The three components required to modify the furnace for batch and continuous recharging with granular silicon were designed. The feasibility of extended growth cycles up to 40 hours long was demonstrated by a recharge simulation experiment; a 6 inch diameter crystal was pulled from a 20 kg charge, remelted, and pulled again for a total of four growth cycles, 59-1/8 inch of body length, and approximately 65 kg of calculated mass.

  14. Report of the Material Control and Material Accounting Task Force: summary

    International Nuclear Information System (INIS)

    1978-03-01

    A special review was made of the safeguards maintained by licensees possessing 5 kg or more of strategic special nuclear material (SSNM), i.e., plutonium, uranium-233, or uranium enriched in the uranium-235 isotope to 20 percent or more. A Task Force was formed to define the roles and objectives of material control and material accounting in the NRC safeguards program; recommend goals for material control and material accounting systems based on their roles and objectives; assess the extent to which the existing regulatory base meets or provides the capability to meet the recommended goals; and to provide direction for material control and material accounting development, including both near-term and long-term upgrades. Based on results of Task Force investigations it is recommended that licensee plans for measurement control programs be submitted in response to Section 70.57(c) of Title 10 of the Code of Federal Regulations. Other recommendations include the review and upgrading, as necessary, of measurement error propagation models used by each licensee; revision of Nuclear Materials Management and Safeguards System (NMMSS) reporting entities for SSNM licensees to be consistent with the partitioning of facilities into plants or, if appropriate, accounting units; review of NMMSS reporting entities for SSNM licensees to assure that data for high enriched uranium operations are clearly separated from low enriched uranium operations; upgrading of the editing by NMMSS of reported licensee safeguards data for accuracy and consistency; and the acquisition of (a) a secure interactive computer capability for use in collecting, storing, sorting, and analyzing special nuclear material accounting data, and (b) associated flexible computer software that presents safeguards information in a succinct and comprehensive manner

  15. Recent Advances in Photoelectrochemical Applications of Silicon Materials for Solar-to-Chemicals Conversion.

    Science.gov (United States)

    Zhang, Doudou; Shi, Jingying; Zi, Wei; Wang, Pengpeng; Liu, Shengzhong Frank

    2017-11-23

    Photoelectrochemical (PEC) technology for the conversion of solar energy into chemicals requires cost-effective photoelectrodes to efficiently and stably drive anodic and/or cathodic half-reactions to complete the overall reactions for storing solar energy in chemical bonds. The shared properties among semiconducting photoelectrodes and photovoltaic (PV) materials are light absorption, charge separation, and charge transfer. Earth-abundant silicon materials have been widely applied in the PV industry, and have demonstrated their efficiency as alternative photoabsorbers for photoelectrodes. Many efforts have been made to fabricate silicon photoelectrodes with enhanced performance, and significant progress has been achieved in recent years. Herein, recent developments in crystalline and thin-film silicon-based photoelectrodes (including amorphous, microcrystalline, and nanocrystalline silicon) immersed in aqueous solution for PEC hydrogen production from water splitting are summarized, as well as applications in PEC CO 2 reduction and PEC regeneration of discharged species in redox flow batteries. Silicon is an ideal material for the cost-effective production of solar chemicals through PEC methods. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Cobalt nanosheet arrays supported silicon film as anode materials for lithium ion batteries

    International Nuclear Information System (INIS)

    Huang, X.H.; Wu, J.B.; Cao, Y.Q.; Zhang, P.; Lin, Y.; Guo, R.Q.

    2016-01-01

    Cobalt nanosheet arrays supported silicon film is prepared and used as anode materials for lithium ion batteries. The film is fabricated using chemical bath deposition, hydrogen reduction and radio-frequency magnetron sputtering techniques. The microstructure and morphology are characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). In this composite film, the silicon layer is supported by interconnected aligned cobalt nanosheet arrays that act as the three-dimensional current collector and buffering network. The electrochemical performance as anode materials for lithium ion batteries is investigated by cyclic voltammetry (CV) and galvanostatic charge-discharge tests. The results show that the film prepared by sputtering for 1500 s exhibits high capacity, good rate capability and stable cycle ability. It is believed that the cobalt nanosheet arrays play important roles in the electrochemical performance of the silicon layer.

  17. Non-fossil reduction materials in the silicon process - properties and behaviour

    Energy Technology Data Exchange (ETDEWEB)

    Myrhaug, Edin Henrik

    2003-07-01

    The purpose of this work has been to clarify the effect of using biocarbon as a reduction material in the silicon process. It was decided to compare the biocarbon with fossil carbon and find possible differences both on process performance and eventually on product quality. The elements in the raw materials added to the silicon process goes into three different products: silicon metal, silica dust and into open air. Based on analysis of raw materials and of produced silicon metal and microsilica extensive material balances have been established. One important result from these are the distribution factors that indicate how much of the trace elements that goes into each medium. Another result is that the boiling point of an element or a compound gives a good indication of were it ends. A high boiling point indicates that the element ends up in the silicon metal, while a low boiling point indicates that the element goes with off-gas into air. With an intermediate boiling point, the element goes into the silica dust. The SiO-reactivity of the reduction materials are commonly acknowledged to affect strongly the productivity and consumption figures of the silicon process. Based on data from thermogravimetric experiments with chemical reaction between carbonaceous spheres and SiO-gas, kinetic parameters have been estimated from the shrinking core model for some selected reduction materials of various sizes and spanning a wide range of SiO-reactivity figures. This model describes the degree of conversion versus time for a single sphere where the chemical reaction progresses in a topochemical manner from the outer surface of the solid towards the centre forming a porous product layer around an unreacted shrinking core. This behaviour is for the selected reduction materials to a large extent supported by an investigation of cross section pictures of fully and 50% converted spheres obtained with a microprobe. The estimated kinetic parameters obtained from the

  18. Use of Monocrystalline Silicon as Tool Material for Highly Accurate Blanking of Thin Metal Foils

    International Nuclear Information System (INIS)

    Hildering, Sven; Engel, Ulf; Merklein, Marion

    2011-01-01

    The trend towards miniaturisation of metallic mass production components combined with increased component functionality is still unbroken. Manufacturing these components by forming and blanking offers economical and ecological advantages combined with the needed accuracy. The complexity of producing tools with geometries below 50 μm by conventional manufacturing methods becomes disproportional higher. Expensive serial finishing operations are required to achieve an adequate surface roughness combined with accurate geometry details. A novel approach for producing such tools is the use of advanced etching technologies for monocrystalline silicon that are well-established in the microsystems technology. High-precision vertical geometries with a width down to 5 μm are possible. The present study shows a novel concept using this potential for the blanking of thin copper foils with monocrystallline silicon as a tool material. A self-contained machine-tool with compact outer dimensions was designed to avoid tensile stresses in the brittle silicon punch by an accurate, careful alignment of the punch, die and metal foil. A microscopic analysis of the monocrystalline silicon punch shows appropriate properties regarding flank angle, edge geometry and surface quality for the blanking process. Using a monocrystalline silicon punch with a width of 70 μm blanking experiments on as-rolled copper foils with a thickness of 20 μm demonstrate the general applicability of this material for micro production processes.

  19. Optical switching at 1.55um in silicon racetrack resonators using phase change materials

    NARCIS (Netherlands)

    Rudé, M.; Pello, J.; Simpson, R.E.; Osmond, J.; Roelkens, G.C.; Tol, van der J.J.G.M.; Pruneri, V.

    2013-01-01

    An optical switch operating at a wavelength of 1.55¿µm and showing a 12 dB modulation depth is introduced. The device is implemented in a silicon racetrack resonator using an overcladding layer of the phase change data storage material Ge2Sb2Te5, which exhibits high contrast in its optical

  20. Hydroxyapatites enriched in silicon – Bioceramic materials for biomedical and pharmaceutical applications

    Directory of Open Access Journals (Sweden)

    Katarzyna Szurkowska

    2017-08-01

    Full Text Available Hydroxyapatite (Ca10(PO46(OH2, abbreviated as HA plays a crucial role in implantology, dentistry and bone surgery. Due to its considerable similarity to the inorganic fraction of the mineralized tissues (bones, enamel and dentin, it is used as component in many bone substitutes, coatings of metallic implants and dental materials. Biomaterial engineering often takes advantage of HA capacity for partial ion substitution because the incorporation of different ions in the HA structure leads to materials with improved biological or physicochemical properties. The objective of the work is to provide an overview of current knowledge about apatite materials substituted with silicon ions. Although the exact mechanism of action of silicon in the bone formation process has not been fully elucidated, research has shown beneficial effects of this element on bone matrix mineralization as well as on collagen type I synthesis and stabilization. The paper gives an account of the functions of silicon in bone tissue and outlines the present state of research on synthetic HA containing silicate ions (Si-HA. Finally, methods of HA production as well as potential and actual applications of HA materials modified with silicon ions are discussed.

  1. N-type nano-silicon powders with ultra-low electrical resistivity as anode materials in lithium ion batteries

    Science.gov (United States)

    Yue, Zhihao; Zhou, Lang; Jin, Chenxin; Xu, Guojun; Liu, Liekai; Tang, Hao; Li, Xiaomin; Sun, Fugen; Huang, Haibin; Yuan, Jiren

    2017-06-01

    N-type silicon wafers with electrical resistivity of 0.001 Ω cm were ball-milled to powders and part of them was further mechanically crushed by sand-milling to smaller particles of nano-size. Both the sand-milled and ball-milled silicon powders were, respectively, mixed with graphite powder (silicon:graphite = 5:95, weight ratio) as anode materials for lithium ion batteries. Electrochemical measurements, including cycle and rate tests, present that anode using sand-milled silicon powder performed much better. The first discharge capacity of sand-milled silicon anode is 549.7 mAh/g and it is still up to 420.4 mAh/g after 100 cycles. Besides, the D50 of sand-milled silicon powder shows ten times smaller in particle size than that of ball-milled silicon powder, and they are 276 nm and 2.6 μm, respectively. In addition, there exist some amorphous silicon components in the sand-milled silicon powder excepting the multi-crystalline silicon, which is very different from the ball-milled silicon powder made up of multi-crystalline silicon only.

  2. Fabrication and properties of graphene reinforced silicon nitride composite materials

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yaping; Li, Bin, E-mail: libin@nudt.edu.cn; Zhang, Changrui; Wang, Siqing; Liu, Kun; Yang, Bei

    2015-09-17

    Silicon nitride (Si{sub 3}N{sub 4}) ceramic composites reinforced with graphene platelets (GPLs) were prepared by hot pressed sintering and pressureless sintering respectively. Adequate intermixing of the GPLs and the ceramic powders was achieved in nmethyl-pyrrolidone (NMP) under ultrasonic vibration followed by ball-milling. The microstructure and phases of the Si{sub 3}N{sub 4} ceramic composites were investigated by Field Emission Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The effects of GPLs on the composites' mechanical properties were analyzed. The results showed that GPLs were well dispersed in the Si{sub 3}N{sub 4} ceramic matrix. β-Si{sub 3}N{sub 4,} O′-sialon and GPLs were present in the hot-pressed composites while pressureless sintered composites contain β-Si{sub 3}N{sub 4}, Si, SiC and GPLs. Graphene has the potential to improve the mechanical properties of both the hot pressed and pressureless sintered composites. Toughening effect of GPLs on the pressureless sintered composites appeared more effective than that on the hot pressed composites. Toughening mechanisms, such as pull-out, crack bridging and crack deflection induced by GPLs were observed in the composites prepared by the two methods.

  3. Bioactive silicon nitride: A new therapeutic material for osteoarthropathy

    Science.gov (United States)

    Pezzotti, Giuseppe; Marin, Elia; Adachi, Tetsuya; Rondinella, Alfredo; Boschetto, Francesco; Zhu, Wenliang; Sugano, Nobuhiko; Bock, Ryan M.; McEntire, Bryan; Bal, Sonny B.

    2017-03-01

    While the reciprocity between bioceramics and living cells is complex, it is principally governed by the implant’s surface chemistry. Consequently, a deeper understanding of the chemical interactions of bioceramics with living tissue could ultimately lead to new therapeutic strategies. However, the physical and chemical principles that govern these interactions remain unclear. The intricacies of this biological synergy are explored within this paper by examining the peculiar surface chemistry of a relatively new bioceramic, silicon nitride (Si3N4). Building upon prior research, this paper aims at obtaining new insights into the biological interactions between Si3N4 and living cells, as a consequence of the off-stoichiometric chemical nature of its surface at the nanometer scale. We show here yet unveiled details of surface chemistry and, based on these new data, formulate a model on how, ultimately, Si3N4 influences cellular signal transduction functions and differentiation mechanisms. In other words, we interpret its reciprocity with living cells in chemical terms. These new findings suggest that Si3N4 might provide unique new medicinal therapies and effective remedies for various bone or joint maladies and diseases.

  4. Fabrication and properties of graphene reinforced silicon nitride composite materials

    International Nuclear Information System (INIS)

    Yang, Yaping; Li, Bin; Zhang, Changrui; Wang, Siqing; Liu, Kun; Yang, Bei

    2015-01-01

    Silicon nitride (Si 3 N 4 ) ceramic composites reinforced with graphene platelets (GPLs) were prepared by hot pressed sintering and pressureless sintering respectively. Adequate intermixing of the GPLs and the ceramic powders was achieved in nmethyl-pyrrolidone (NMP) under ultrasonic vibration followed by ball-milling. The microstructure and phases of the Si 3 N 4 ceramic composites were investigated by Field Emission Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The effects of GPLs on the composites' mechanical properties were analyzed. The results showed that GPLs were well dispersed in the Si 3 N 4 ceramic matrix. β-Si 3 N 4, O′-sialon and GPLs were present in the hot-pressed composites while pressureless sintered composites contain β-Si 3 N 4 , Si, SiC and GPLs. Graphene has the potential to improve the mechanical properties of both the hot pressed and pressureless sintered composites. Toughening effect of GPLs on the pressureless sintered composites appeared more effective than that on the hot pressed composites. Toughening mechanisms, such as pull-out, crack bridging and crack deflection induced by GPLs were observed in the composites prepared by the two methods

  5. Plasmonic silicon solar cells: impact of material quality and geometry.

    Science.gov (United States)

    Pahud, Celine; Isabella, Olindo; Naqavi, Ali; Haug, Franz-Josef; Zeman, Miro; Herzig, Hans Peter; Ballif, Christophe

    2013-09-09

    We study n-i-p amorphous silicon solar cells with light-scattering nanoparticles in the back reflector. In one configuration, the particles are fully embedded in the zinc oxide buffer layer; In a second configuration, the particles are placed between the buffer layer and the flat back electrode. We use stencil lithography to produce the same periodic arrangement of the particles and we use the same solar cell structure on top, thus establishing a fair comparison between a novel plasmonic concept and its more traditional counterpart. Both approaches show strong resonances around 700 nm in the external quantum efficiency the position and intensity of which vary strongly with the nanoparticle shape. Moreover, disagreement between simulations and our experimental results suggests that the dielectric data of bulk silver do not correctly represent the reality. A better fit is obtained by introducing a porous interfacial layer between the silver and zinc oxide. Without the interfacial layer, e.g. by improved processing of the nanoparticles, our simulations show that the nanoparticles concept could outperform traditional back reflectors.

  6. Array automated assembly task low cost silicon solar array project. Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Olson, Clayton

    1980-12-01

    The initial contract was a Phase II Process Development for a process sequence, but with concentration on two particular process steps: laserscribing and spray-on junction formation. The add-on portion of the contract was to further develop these tasks, to incorporate spray-on of AR Coating and aluminum and to study the application of microwave energy to solar cell fabrication. The overall process cost projection is 97.918 cents/Wp. The major contributor to this excess cost is the module encapsulation materials cost. During the span of this contract the study of microwave application to solar cell fabrication produced the ability to apply this technique to any requirement of 600/sup 0/C or less. Above this temperature, non-uniformity caused the processing to be unreliable. The process sequence is described in detail, and a SAMICS cost analysis for each valid process step studied is presented. A temporary catalog for expense items is included, and engineering specifications for the process steps are given. (WHK)

  7. Temperature and humidity effect on aging of silicone rubbers as sealing materials for proton exchange membrane fuel cell applications

    International Nuclear Information System (INIS)

    Chang, Huawei; Wan, Zhongmin; Chen, Xi; Wan, Junhua; Luo, Liang; Zhang, Haining; Shu, Shuiming; Tu, Zhengkai

    2016-01-01

    Highlights: • Aging of silicone rubbers with different hardness was investigated. • Existed water molecules from humidified gases can accelerate the aging process. • Silicone rubber with hardness of 40 is more suitable as sealing materials. • Silicone rubbers can be used as sealing materials below 80 °C but not above 100 °C. - Abstract: Durability and reliability of seals around perimeter of each unit are critical to the lifetime of proton exchange membrane fuel cells. In this study, we investigate the aging of silicone rubbers with different hardness, often used as sealing materials for fuel cells, subjected to dry and humidified air at different temperatures. The aging properties are characterized by variation of permanent compression set value under compression, mechanical properties, and surface morphology as well. The results show that aging of silicone rubbers becomes more severe with the increase in subjected temperature. At temperature above 100 °C, silicone rubbers are not suitable for fuel cell applications. The existed water molecules from humidified gases can accelerate the aging of silicone rubbers. Among the tested samples, silicone rubber with hardness of 40 is more durable than that with hardness of 30 and 50 for fuel cells. The change of chemical structure after aging suggests that the aging of silicone rubbers mainly results from the chemical decomposition of cross-linker units for connection of polysiloxane backbones and of methyl groups attached to silicon atoms.

  8. Self-assembled peptide nanotubes as an etching material for the rapid fabrication of silicon wires

    DEFF Research Database (Denmark)

    Larsen, Martin Benjamin Barbour Spanget; Andersen, Karsten Brandt; Svendsen, Winnie Edith

    2011-01-01

    This study has evaluated self-assembled peptide nanotubes (PNTS) and nanowires (PNWS) as etching mask materials for the rapid and low-cost fabrication of silicon wires using reactive ion etching (RIE). The self-assembled peptide structures were fabricated under mild conditions and positioned on c...... characterization by SEM and I-V measurements. Additionally, the fabricated silicon structures were functionalized with fluorescent molecules via a biotin-streptavidin interaction in order to probe their potential in the development of biosensing devices....

  9. Work plan for testing silicone impression material and fixture on pool cell capsule

    International Nuclear Information System (INIS)

    Lundeen, J.E.

    1994-01-01

    The purpose of this work plan is to provide a safe procedure to test a cesium capsule impression fixture at Waste Encapsulation and Storage Facility (WESF). The impression will be taken with silicone dental impression material pressed down upon the capsule using the impression fixture. This test will evaluate the performance of the fixture and impression material under high radiation and temperature conditions on a capsule in a WESF pool cell

  10. Silicon oxide based high capacity anode materials for lithium ion batteries

    Science.gov (United States)

    Deng, Haixia; Han, Yongbong; Masarapu, Charan; Anguchamy, Yogesh Kumar; Lopez, Herman A.; Kumar, Sujeet

    2017-03-21

    Silicon oxide based materials, including composites with various electrical conductive compositions, are formulated into desirable anodes. The anodes can be effectively combined into lithium ion batteries with high capacity cathode materials. In some formulations, supplemental lithium can be used to stabilize cycling as well as to reduce effects of first cycle irreversible capacity loss. Batteries are described with surprisingly good cycling properties with good specific capacities with respect to both cathode active weights and anode active weights.

  11. LSA Large Area Silicon Sheet Task Continuous Liquid Feed Czochralski Growth

    Science.gov (United States)

    Fiegl, G.

    1979-01-01

    A process for the continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells was studied. Continuous growth is the growth of 100 Kg of single silicon crystals, 10 cm in diameter, from one container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a melt-down system and a liquid transfer mechanism, with associated automatic feedback controls was developed. Elements of the transfer system were further developed and tested during actual transfer runs. Considerable simplification of the heating element of the transfer tube was achieved. Accuracy and reliability of the temperature sensor, which is part of the power input control system for the transfer tube, was improved. Electrical and thermal effectiveness were increased while assembly of the transfer tube system was further simplified.

  12. Bulk solar grade silicon: how chemistry and physics play to get a benevolent microstructured material

    Energy Technology Data Exchange (ETDEWEB)

    Pizzini, S. [University of Milano-Bicocca, Department of Materials Science, Milan (Italy); Nedsilicon SpA, Osimo, Ancona (Italy)

    2009-07-15

    The availability of low-cost alternatives to electronic grade silicon has been and still is the condition for the extensive use of photovoltaics as an efficient sun harvesting system. The first step towards this objective was positively carried out in the 1980s and resulted in the reduction in cost and energy of the growth process using as feedstock electronic grade scraps and a variety of solidification procedures, all of which deliver a multi-crystalline material of high photovoltaic quality. The second step was an intense R and D activity aiming at defining and developing at lab scale a new variety of silicon, called ''solar grade'' silicon, which should fulfil the requirement of both cost effectiveness and high conversion efficiency. The third step involved and still involves the development of cost-effective technologies for the manufacture of solar grade silicon, in alternative to the classical Siemens route, which relays, as is well-known, to the pyrolitic decomposition of high-purity trichlorosilane and which is, also in its more advanced versions, extremely energy intensive. Aim of this paper is to give the author's viewpoint about some open questions concerning bulk solar silicon for PV applications and about challenges and chances of novel feedstocks of direct metallurgical origin. (orig.)

  13. Effective Chemical Route to 2D Nanostructured Silicon Electrode Material: Phase Transition from Exfoliated Clay Nanosheet to Porous Si Nanoplate

    International Nuclear Information System (INIS)

    Adpakpang, Kanyaporn; Patil, Sharad B.; Oh, Seung Mi; Kang, Joo-Hee; Lacroix, Marc; Hwang, Seong-Ju

    2016-01-01

    Graphical abstract: Effective morphological control of porous silicon 2D nanoplate can be achieved by the magnesiothermically-induced phase transition of exfoliated silicate clay nanosheets. The promising lithium storage performance of the obtained silicon materials with huge capacity and excellent rate characteristics underscores the prime importance of porously 2D nanostructured morphology of silicon. - Highlights: • 2D nanostructured silicon electrode materials are successfully synthesized via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. • High discharge capacity and rate capability are achieved from the 2D nanoplates of silicon. • Silicon 2D nanoplates can enhance both Li"+ diffusion and charge-transfer kinetics. • 2D nanostructured silicon is beneficial for the cycling stability by minimizing the volume change during lithiation-delithiation. - Abstract: An efficient and economical route for the synthesis of porous two-dimensional (2D) nanoplates of silicon is developed via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. The magnesiothermic reaction of precursor clay nanosheets prepared by the exfoliation and restacking with Mg"2"+ cations yields porous 2D nanoplates of elemental silicon. The variation in the Mg:SiO_2 ratio has a significant effect on the porosity and connectivity of silicon nanoplates. The porous silicon nanoplates show a high discharge capacity of 2000 mAh g"−"1 after 50 cycles. Of prime importance is that this electrode material still retains a large discharge capacity at higher C-rates, which is unusual for the elemental silicon electrode. This is mainly attributed to the improved diffusion of lithium ions, charge-transfer kinetics, and the preservation of the electrical connection of the porous 2D plate-shaped morphology. This study highlights the usefulness of clay mineral as an economical and scalable precursor of high-performance silicon electrodes with

  14. Fluorescent silicon carbide materials for white LEDs and photovoltaics

    DEFF Research Database (Denmark)

    Syväjärvi, Mikael; Ou, Haiyan; Wellmann, Peter

    the luminescence appears in the infrared region in a broad range from 700 to 1100 nm. This potentially can be used to develop an infrared LED for de-icing in wind power and airplanes, or medical applications. Further on, a very efficient solar cell material can be investigated by studying the impurity effect...

  15. Effects of material non-linearity on the residual stresses in a dendritic silicon crystal ribbon

    Science.gov (United States)

    Ray, Sujit K.; Utku, Senol

    1990-01-01

    Thermal stresses developed in a dendritic silicon crystal ribbon have been shown to cause plastic deformation and residual stresses in the ribbon. This paper presents an implementation of a numerical model proposed for thermoelastoplastic behavior of a material. The model has been used to study the effects of plasticity of silicon on the residual stresses. The material properties required to implement this model are all assumed, and the response of the material to the variations in these assumed parameters of the constitutive law and in the finite element mesh is investigated. The steady state growth process is observed to be periodic with nonzero residual stresses. Numerical difficulties are also encountered in the computer solution process, resulting in sharp jumps and large oscillations in the stress responses.

  16. Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects.

    Science.gov (United States)

    Sun, Shuangxi; Mu, Wei; Edwards, Michael; Mencarelli, Davide; Pierantoni, Luca; Fu, Yifeng; Jeppson, Kjell; Liu, Johan

    2016-08-19

    For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting of high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, consisting of hundreds of tiny CNTs, were uniformly coated by copper through electroplating, and aspect ratios as high as 300:1 were obtained. The resistivity of this nanomaterial was found to be as low as ∼10(-8) Ω m, which is of the same order of magnitude as the resistivity of copper, and its temperature coefficient was found to be only half of that of pure copper. The main advantage of the composite TSV nanomaterial is that its coefficient of thermal expansion (CTE) is similar to that of silicon, a key reliability factor. A finite element model was set up to demonstrate the reliability of this composite material and thermal cycle simulations predicted very promising results. In conclusion, this composite nanomaterial appears to be a very promising material for future 3D TSV applications offering both a low resistivity and a low CTE similar to that of silicon.

  17. Fine pitch and low material readout bus in the Silicon Pixel Vertex Tracker for the PHENIX Vertex Tracker upgrade

    International Nuclear Information System (INIS)

    Fujiwara, Kohei

    2010-01-01

    The construction of the Silicon Pixel Detector is starting in spring 2009 as project of the RHIC-PHENIX Silicon Vertex Tracker (VTX) upgrade at the Brookhaven National Laboratory. For the construction, we have developed a fine pitch and low material readout bus as the backbone parts of the VTX. In this article, we report the development and production of the readout bus.

  18. Electrochemical characterization of carbon coated bundle-type silicon nanorod for anode material in lithium ion secondary batteries

    International Nuclear Information System (INIS)

    Halim, Martin; Kim, Jung Sub; Choi, Jeong-Gil; Lee, Joong Kee

    2015-01-01

    Highlights: • Bundle-type silicon nanorods (BSNR) were synthesized by metal assisted chemical etching. • Novel bundle-type nanorods electrode showed self-relaxant characteristics. • The self-relaxant property was enhanced by increasing the silver concentration. • PAA binder enhanced the self-relaxant property of the silicon material. • Carbon coated BSNR (BSNR@C) has evidently provided better cycle performance. - Abstract: Nanostructured silicon synthesis by surface modification of commercial micro-powder silicon was investigated in order to reduce the maximum volume change over cycle. The surface of micro-powder silicon was modified using an Ag metal-assisted chemical etching technique to produce nanostructured material in the form of bundle-type silicon nanorods. The volume change of the electrode using the nanostructured silicon during cycle was investigated using an in-situ dilatometer. Our result shows that nanostructured silicon synthesized using this method showed a self-relaxant characteristic as an anode material for lithium ion battery application. Moreover, binder selection plays a role in enhancing self-relaxant properties during delithiation via strong hydrogen interaction on the surface of the silicon material. The nanostructured silicon was then coated with carbon from propylene gas and showed higher capacity retention with the use of polyacrylic acid (PAA) binder. While the nano-size of the pore diameter control may significantly affect the capacity fading of nanostructured silicon, it can be mitigated via carbon coating, probably due to the prevention of Li ion penetration into 10 nano-meter sized pores

  19. Electrochemical characterization of carbon coated bundle-type silicon nanorod for anode material in lithium ion secondary batteries

    Energy Technology Data Exchange (ETDEWEB)

    Halim, Martin [Center for Energy Convergence, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Energy and Environmental Engineering, Korea University of Science and Technology, Gwahangno, Yuseong-gu, Daejeon, 305-333 (Korea, Republic of); Kim, Jung Sub [Center for Energy Convergence, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Department of Material Science & Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Choi, Jeong-Gil [Department of Chemical Engineering, Hannam University, 461-1 Junmin-dong, Yusung-gu, Taejon 305-811 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Center for Energy Convergence, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Energy and Environmental Engineering, Korea University of Science and Technology, Gwahangno, Yuseong-gu, Daejeon, 305-333 (Korea, Republic of)

    2015-04-15

    Highlights: • Bundle-type silicon nanorods (BSNR) were synthesized by metal assisted chemical etching. • Novel bundle-type nanorods electrode showed self-relaxant characteristics. • The self-relaxant property was enhanced by increasing the silver concentration. • PAA binder enhanced the self-relaxant property of the silicon material. • Carbon coated BSNR (BSNR@C) has evidently provided better cycle performance. - Abstract: Nanostructured silicon synthesis by surface modification of commercial micro-powder silicon was investigated in order to reduce the maximum volume change over cycle. The surface of micro-powder silicon was modified using an Ag metal-assisted chemical etching technique to produce nanostructured material in the form of bundle-type silicon nanorods. The volume change of the electrode using the nanostructured silicon during cycle was investigated using an in-situ dilatometer. Our result shows that nanostructured silicon synthesized using this method showed a self-relaxant characteristic as an anode material for lithium ion battery application. Moreover, binder selection plays a role in enhancing self-relaxant properties during delithiation via strong hydrogen interaction on the surface of the silicon material. The nanostructured silicon was then coated with carbon from propylene gas and showed higher capacity retention with the use of polyacrylic acid (PAA) binder. While the nano-size of the pore diameter control may significantly affect the capacity fading of nanostructured silicon, it can be mitigated via carbon coating, probably due to the prevention of Li ion penetration into 10 nano-meter sized pores.

  20. Gold nanorods-silicone hybrid material films and their optical limiting property

    Science.gov (United States)

    Li, Chunfang; Qi, Yanhai; Hao, Xiongwen; Peng, Xue; Li, Dongxiang

    2015-10-01

    As a kind of new optical limiting materials, gold nanoparticles have optical limiting property owing to their optical nonlinearities induced by surface plasmon resonance (SPR). Gold nanorods (GNRs) possess transversal SPR absorption and tunable longitudinal SPR absorption in the visible and near-infrared region, so they can be used as potential optical limiting materials against tunable laser pulses. In this letter, GNRs were prepared using seed-mediated growth method and surface-modified by silica coating to obtain good dispersion in polydimethylsiloxane prepolymers. Then the silicone rubber films doped with GNRs were prepared after vulcanization, whose optical limiting property and optical nonlinearity were investigated. The silicone rubber samples doped with more GNRs were found to exhibit better optical limiting performance.

  1. The Microwave Noise Behaviour Of Dual Material Gate Silicon On Insulator

    Science.gov (United States)

    Jafar, N.; Soin, N.

    2009-06-01

    This work presents the noise behaviour due to the applied Dual Material Gate (DMG) on the 75 nm n-channel Silicon On Insulator (SOI) device operating in the fully depletion mode, particularly for microwave circuit design. Influences of DMG properties namely the gate length ratio (L1:L2) and gate material workfunction difference (ΔΦM) as well as structural and operational parameters which are silicon thickness (TSi) and threshold voltage (VTH) setting variation on the noise performance were carried out on simulation basis using ATLAS 2D. Results show better noise performance in DMG as compare to the standard gate structure of FD-SOI devices. Higher VTH for DMG design is recommended for minimized noise figure in line with the advantage of inverse VTH roll-off characteristics for short channel effects suppression.

  2. Using Task-based Materials in Teaching Writing for EFL Classes in Indonesia

    Directory of Open Access Journals (Sweden)

    Hanna Sundari

    2018-05-01

    Full Text Available Task-based language teaching has been widely used for language classroom. Using tasks as main activities, task-based materials was developed particularly for writing class. This article is intended to present the study of effectiveness of task-based materials in improving writing class for university. To accommodate the research purposes, mixed method approach was carried out by using quasi experimental research and content analysis of sentence complexity. The respondents were 210 students from writing classes as experiment and control with writing test as instrument. The results of data analysis showed that there were significant differences of writing skill to those who taught using developed task-based materials. Despite the fact that the score did not significantly differ on the aspect of writing mechanics, a developed task-based material has been proved to improve students’ writing skill in the aspect of format, content, organization and grammar. Moreover, the levels of lexical complexity and accuracy from the students whose materials use task-based design are higher than those who do not use it. Then, it can be drawn a conclusion that the use of developed task-based materials brings significant effects toward writing performance.

  3. Fine defective structure of silicon carbide powders obtained from different starting materials

    Directory of Open Access Journals (Sweden)

    Tomila T.V.

    2006-01-01

    Full Text Available The fine defective structure of silicon carbide powders obtained from silicic acid-saccharose, aerosil-saccharose, aerosil-carbon black, and hydrated cellulose-silicic acid gel systems was investigated. The relation between IR absorption characteristics and the microstructure of SiC particles obtained from different starting materials was established. The numerical relationship between the lattice parameter a and the frequency νTO is presented.

  4. Influence of ion bombardment on microcrystalline silicon material quality and solar cell performances

    OpenAIRE

    Bugnon, G; Feltrin, A; Sculati-Meillaud, F; Bailat, J; Ballif, C

    2008-01-01

    Microcrystalline hydrogenated silicon growth with VHF-PECVD was examined in an industrial type parallel plate KAITM reactor. The influence of pressure on material quality was studied in single junction solar cells. Solar cells with their intrinsic layer prepared at higher pressures exhibit remarkable improvements, reaching 8.2% efficiency at 3.5 mbar. Further analyzes showed that μc- Si:H intrinsic layers grown at higher pressures have a significantly lower defect density. These results are a...

  5. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2007-08-01

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  6. Experimental investigation on material migration phenomena in micro-EDM of reaction-bonded silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Liew, Pay Jun [Department of Mechanical Systems and Design, Tohoku University, Aramaki Aoba 6-6-01, Aoba-ku, Sendai, 980-8579 (Japan); Manufacturing Process Department, Faculty of Manufacturing Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100, Durian Tunggal, Melaka (Malaysia); Yan, Jiwang, E-mail: yan@mech.keio.ac.jp [Department of Mechanical Engineering, Faculty of Science and Technology, Keio University, Hiyoshi 3-14-1, Kohoku-ku, Yokohama, 223-8522 (Japan); Kuriyagawa, Tsunemoto [Department of Mechanical Systems and Design, Tohoku University, Aramaki Aoba 6-6-01, Aoba-ku, Sendai, 980-8579 (Japan)

    2013-07-01

    Material migration between tool electrode and workpiece material in micro electrical discharge machining of reaction-bonded silicon carbide was experimentally investigated. The microstructural changes of workpiece and tungsten tool electrode were examined using scanning electron microscopy, cross sectional transmission electron microscopy and energy dispersive X-ray under various voltage, capacitance and carbon nanofibre concentration in the dielectric fluid. Results show that tungsten is deposited intensively inside the discharge-induced craters on the RB-SiC surface as amorphous structure forming micro particles, and on flat surface region as a thin interdiffusion layer of poly-crystalline structure. Deposition of carbon element on tool electrode was detected, indicating possible material migration to the tool electrode from workpiece material, carbon nanofibres and dielectric oil. Material deposition rate was found to be strongly affected by workpiece surface roughness, voltage and capacitance of the electrical discharge circuit. Carbon nanofibre addition in the dielectric at a suitable concentration significantly reduced the material deposition rate.

  7. Experimental investigation on material migration phenomena in micro-EDM of reaction-bonded silicon carbide

    International Nuclear Information System (INIS)

    Liew, Pay Jun; Yan, Jiwang; Kuriyagawa, Tsunemoto

    2013-01-01

    Material migration between tool electrode and workpiece material in micro electrical discharge machining of reaction-bonded silicon carbide was experimentally investigated. The microstructural changes of workpiece and tungsten tool electrode were examined using scanning electron microscopy, cross sectional transmission electron microscopy and energy dispersive X-ray under various voltage, capacitance and carbon nanofibre concentration in the dielectric fluid. Results show that tungsten is deposited intensively inside the discharge-induced craters on the RB-SiC surface as amorphous structure forming micro particles, and on flat surface region as a thin interdiffusion layer of poly-crystalline structure. Deposition of carbon element on tool electrode was detected, indicating possible material migration to the tool electrode from workpiece material, carbon nanofibres and dielectric oil. Material deposition rate was found to be strongly affected by workpiece surface roughness, voltage and capacitance of the electrical discharge circuit. Carbon nanofibre addition in the dielectric at a suitable concentration significantly reduced the material deposition rate.

  8. Bacterial adhesion to conventional hydrogel and new silicone-hydrogel contact lens materials.

    Science.gov (United States)

    Kodjikian, Laurent; Casoli-Bergeron, Emmanuelle; Malet, Florence; Janin-Manificat, Hélène; Freney, Jean; Burillon, Carole; Colin, Joseph; Steghens, Jean-Paul

    2008-02-01

    As bacterial adhesion to contact lenses may contribute to the pathogenesis of keratitis, the aim of our study was to investigate in vitro adhesion of clinically relevant bacteria to conventional hydrogel (standard HEMA) and silicone-hydrogel contact lenses using a bioluminescent ATP assay. Four types of unworn contact lenses (Etafilcon A, Galyfilcon A, Balafilcon A, Lotrafilcon B) were incubated with Staphylococcus epidermidis (two different strains) and Pseudomonas aeruginosa suspended in phosphate buffered saline (PBS). Lenses were placed with the posterior surface facing up and were incubated in the bacterial suspension for 4 hours at 37 degrees C. Bacterial binding was then measured and studied by bioluminescent ATP assay. Six replicate experiments were performed for each lens and strain. Adhesion of all species of bacteria to standard HEMA contact lenses (Etafilcon A) was found to be significantly lower than that of three types of silicone-hydrogel contact lenses, whereas Lotrafilcon B material showed the highest level of bacterial binding. Differences between species in the overall level of adhesion to the different types of contact lenses were observed. Adhesion of P. aeruginosa was typically at least 20 times greater than that observed with both S. epidermidis strains. Conventional hydrogel contact lenses exhibit significantly lower bacterial adhesion in vitro than silicone-hydrogel ones. This could be due to the greater hydrophobicity but also to the higher oxygen transmissibility of silicone-hydrogel lenses.

  9. Trace elements determination in silicon and ferrosilicon reference materials by instrumental neutron activation analysis method

    International Nuclear Information System (INIS)

    Moreira, Edson Goncalves; Vasconcellos, Marina Beatriz Agostini; Saiki, Mitiko; Iamashita, Celia Omine

    2002-01-01

    The use of certified reference materials, CRM, is of uppermost importance in the rastreability realization of the measurement process. At times, CRM use is restricted by the non existence of a suitable CRM with similarity to the sample in respect to matrix composition or with element levels in different orders of magnitude. IPT Chemical Division launched a project to prepare a metallic silicon CRM, due to the requirements of the industries in this field. To characterize this new CRM, IPEN Nuclear Reactor Center is able to perform instrumental neutron activation analysis, INAA, a very suitable method for silicon matrix samples because they produce basically the short lived radionuclide 3 1 Si under thermal neutrons flux, which after radioactive decay, does not interfere in the determination of other elements. In this paper, it is presented the determination of As, Br, Co, Cr, K, Eu, Fe, La, Mn, Na Nb, Sb, Sm, Sc, Th, Tb, U, V, W and Yb in silicon CRM NBS SRM 57; ferrosilicon CRM IPT 56; IPT 70; NBS SRM 58a; NBS SRM 59a and silicon RM under preparation IPT 132. From the results, the accuracy and the precision of the process were assessed. (author)

  10. [Influence of autoclave sterilization on dimensional stability and detail reproduction of 5 additional silicone impression materials].

    Science.gov (United States)

    Xu, Tong-kai; Sun, Zhi-hui; Jiang, Yong

    2012-03-01

    To evaluate the dimensional stability and detail reproduction of five additional silicone impression materials after autoclave sterilization. Impressions were made on the ISO 4823 standard mold containing several marking lines, in five kinds of additional silicone. All the impressions were sterilized by high temperature and pressure (135 °C, 212.8 kPa) for 25 min. Linear measurements of pre-sterilization and post-sterilization were made with a measuring microscope. Statistical analysis utilized single-factor analysis with pair-wise comparison of mean values when appropriate. Hypothesis testing was conducted at alpha = 0.05. No significant difference was found between the pre-sterilization and post-sterilization conditions for all locations, and all the absolute valuse of linear rate of change less than 8%. All the sterilization by the autoclave did not affect the surfuce detail reproduction of the 5 impression materials. The dimensional stability and detail reproduction of the five additional silicone impression materials in the study was unaffected by autoclave sterilization.

  11. Final report. Fabrication of silicon carbide/silicon nitride nanocomposite materials and characterization of their performance; Herstellung von Siliciumcarbid/Siliciumnitrid-Nanocomposite-Werkstoffen und Charakterisierung ihrer Leistungsfaehigkeit. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Westerheide, R.; Woetting, G.; Schmitz, H.W.

    1998-07-01

    The presented activities were initiated by the well known publications of Niihara and Ishizaki. There, the strengthening and toughening of silicon nitride by nanoscaled silicon carbide particles are described. Both authors have used expensive powder production routes to achieve the optimum mechanical properties. However, for a commercial purpose these routes are not applicable due to their high cost and low reproducibility. The production route chosen by H.C. Starck together with CFI and the Fraunhofer-Institute is a powder synthesis based on the carbothermal reaction of silicon nitride as a low cost synthesis method. The investigations were performed for materials made from synthesis powders and other reference materials. The materials were densified with relatively high amounts of conventional sintering additives by gas pressure sintering. It is shown, that the postulated maxima of strength and fracture toughness behaviour at room temperature with maxima at about 5% to 25% nanoscaled SiC cannot be achieved. However, the mechanical high temperature material behaviour is as good as the behaviour of highly developed silicon nitride materials, which are produced by HIP or by consequent minimisation of the additive content with the well known difficulties to densify these materials. An overview will be given here on the powder production route and their specific problems, the mechanical properties, the microstructure and the possible effects of the microstructure, which result in an improvement of the creep resistance. (orig.)

  12. IFMIF (International Fusion Materials Irradiation Facility) key element technology phase task description

    Energy Technology Data Exchange (ETDEWEB)

    Ida, M.; Nakamura, H.; Sugimoto, M.; Yutani, T.; Takeuchi, H. [eds.] [Japan Atomic Energy Research Inst., Tokai Research Establishment, Fusion Neutron Laboratory, Tokai, Ibaraki (Japan)

    2000-08-01

    In 2000, a 3 year Key Element technology Phase (KEP) of the International Fusion Materials Irradiation Facility (IFMIF) has been initiated to reduce the key technology risk factors needed to achieve continuous wave (CW) beam with the desired current and energy and to reach the corresponding power handling capabilities in the liquid lithium target system. In the KEP, the IFMIF team (EU, Japan, Russian Federation, US) will perform required tasks. The contents of the tasks are described in the task description sheet. As the KEP tasks, the IFMIF team have proposed 27 tasks for Test Facilities, 12 tasks for Target, 26 tasks for Accelerator and 18 tasks for Design Integration. The task description by RF is not yet available. The task items and task descriptions may be added or revised with the progress of KEP activities. These task description sheets have been compiled in this report. After 3 years KEP, the results of the KEP tasks will be reviewed. Following the KEP, 3 years Engineering Validation Phase (EVP) will continue for IFMIF construction. (author)

  13. Continuous Czochralski growth: Silicon sheet growth development of the large area silicon sheet task of the Low Cost Silicon Solar Array project

    Science.gov (United States)

    1978-01-01

    The primary objective of this contract is to develop equipment and methods for the economic production of single crystal ingot material by the continuous Czochralski (CZ) process. Continuous CZ is defined for the purpose of this work as the growth of at least 100 kilograms of ingot from only one melt container. During the reporting period (October, 1977 - September, 1978), a modified grower was made fully functional and several recharge runs were performed. The largest run lasted 44 hours and over 42 kg of ingot was produced. Little, if any, degradation in efficiency was observed as a result of pulling multiple crystals from one crucible. Solar efficiencies observed were between 9.3 and 10.4% AMO (13.0 and 14.6% AMI) compared to 10.5% (14.7% AMI) for optimum CZ material control samples. Using the SAMICS/IPEG format, economic analysis of continuous CZ suggests that 1986 DoE cost goals can only be met by the growth of large diameter, large mass crystals.

  14. Continuous Czochralski Growth. Silicon Sheet Growth Development of the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project

    Science.gov (United States)

    Merz, F.

    1979-01-01

    During the reporting period, a successful 100 kilogram run was performed. Six ingots of 13 cm diameter were grown, ranging in size from 15.5 kg to 17.7 kg. Melt replenishment methods included both poly rod and lump feed material. Samples from each ingot were prepared for solar cell fabrication and analyses, impurity analysis, and structural studies. The furnace was converted to the 14-inch hot zone and preliminary heat runs were performed. Two sucessful runs were demonstrated, by growing 25 kg ingots from 30 kg melts. Also, a 100 kg run was attempted, utilizing the 14 inch crucible hot zone, but was prematurely terminated due to excessive monoxide which accumulated on the viewports and a seed failure.

  15. Dissolution chemistry and biocompatibility of single-crystalline silicon nanomembranes and associated materials for transient electronics.

    Science.gov (United States)

    Hwang, Suk-Won; Park, Gayoung; Edwards, Chris; Corbin, Elise A; Kang, Seung-Kyun; Cheng, Huanyu; Song, Jun-Kyul; Kim, Jae-Hwan; Yu, Sooyoun; Ng, Joanne; Lee, Jung Eun; Kim, Jiyoung; Yee, Cassian; Bhaduri, Basanta; Su, Yewang; Omennetto, Fiorenzo G; Huang, Yonggang; Bashir, Rashid; Goddard, Lynford; Popescu, Gabriel; Lee, Kyung-Mi; Rogers, John A

    2014-06-24

    Single-crystalline silicon nanomembranes (Si NMs) represent a critically important class of material for high-performance forms of electronics that are capable of complete, controlled dissolution when immersed in water and/or biofluids, sometimes referred to as a type of "transient" electronics. The results reported here include the kinetics of hydrolysis of Si NMs in biofluids and various aqueous solutions through a range of relevant pH values, ionic concentrations and temperatures, and dependence on dopant types and concentrations. In vitro and in vivo investigations of Si NMs and other transient electronic materials demonstrate biocompatibility and bioresorption, thereby suggesting potential for envisioned applications in active, biodegradable electronic implants.

  16. Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

    Science.gov (United States)

    Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

    2013-01-22

    Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

  17. Signals from fluorescent materials on the surface of silicon micro-strip sensors

    CERN Document Server

    Sperlich, Dennis; The ATLAS collaboration

    2017-01-01

    For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker. In order to minimise the amount of material in the detector, circuit boards with readout electronics will be glued on to the active area of the sensor. Several adhesives investigated to be used for the construction of detector modules were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high- radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By pointing the beam both inside the sensor and parallel to the sensor surface, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibility of silicon strip sensors to light contamination from fluorescent mate...

  18. Raw materials and environment - tasks in the nineties

    International Nuclear Information System (INIS)

    Fritz, W.; Ziegler, A.

    1994-01-01

    The mining of coal has long been characterised by the conflict between nature and civilisation. The mining industry must face up to this conflict and tackle the associated problems courageously. These problems are, of course, always encountered in different forms. Their solution depends on the expectations of the disputants in settlement of the conflict, but also on the technical and economic possibilities in each individual case. Hence control or in this case management of the environment is required. In the best case this leads to a consensus with regard to the solution and consequently to acceptance. However, the parties concerned often attempt to enforce their own concepts of a solution to the problem. The feeling for a joint obligation to solve such a basic problem is often lost. Fairness - a classical cardinal virtue required for the settlement - is increasingly less evident. The mining industry may deplore this situation. However, it must continuously undertake the responsibility to strengthen the feeling for common interest and fairness, wherever it participates in the solution of the problems posed by the conflict between nature and civilisation in its work with coal. This task is the concern of the mining industry today and will continue to be so in future. (orig.)

  19. Nanostructured 2D cellular materials in silicon by sidewall transfer lithography NEMS

    Science.gov (United States)

    Syms, Richard R. A.; Liu, Dixi; Ahmad, Munir M.

    2017-07-01

    Sidewall transfer lithography (STL) is demonstrated as a method for parallel fabrication of 2D nanostructured cellular solids in single-crystal silicon. The linear mechanical properties of four lattices (perfect and defected diamond; singly and doubly periodic honeycomb) with low effective Young’s moduli and effective Poisson’s ratio ranging from positive to negative are modelled using analytic theory and the matrix stiffness method with an emphasis on boundary effects. The lattices are fabricated with a minimum feature size of 100 nm and an aspect ratio of 40:1 using single- and double-level STL and deep reactive ion etching of bonded silicon-on-insulator. Nanoelectromechanical systems (NEMS) containing cellular materials are used to demonstrate stretching, bending and brittle fracture. Predicted edge effects are observed, theoretical values of Poisson’s ratio are verified and failure patterns are described.

  20. Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes; Summary Discussion Sessions

    International Nuclear Information System (INIS)

    Sopori, B.; Swanson, D.; Sinton, R.; Stavola, M.; Tan, T.

    1998-01-01

    This report is a summary of the panel discussions included with the Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme of the workshop was ''Supporting the Transition to World Class Manufacturing.'' This workshop provided a forum for an informal exchange of information between researchers in the photovoltaic and nonphotovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helped establish a knowledge base that can be used for improving device-fabrication processes to enhance solar-cell performance and reduce cell costs. It also provided an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research

  1. Minority carrier diffusion lengths and absorption coefficients in silicon sheet material

    Science.gov (United States)

    Dumas, K. A.; Swimm, R. T.

    1980-01-01

    Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.

  2. Effect of calcium/silicon ratio on retention of uranium (VI) in portland cement materials

    International Nuclear Information System (INIS)

    Tan Hongbin; Li Yuxiang

    2005-01-01

    Calcium silicate hydrate (CSH) materials of varied calcium to silicon (Ca/Si) ratios were prepared by hydrothermal synthesis at 80 degree C, with calcium oxide and micro-silicon employed. These products were determined to be of gel phase by XRD. Leaching tests with 1% hydrochloric acid indicated that more Uranium (VI) was detained by CSH with lower Ca/Si ratios. Alkali-activated slag cement (with a lower Ca/Si ratio) was found to have a stronger retention capacity than Portland cement (with a higher Ca/Si ratio), at 25 degree C in 102-days leaching tests with simulated solidified forms containing Uranium (VI). The accumulative leaching fraction of Uranium (VI) for Alkali-activated slag cement solidified forms is 17.6% lower than that for Portland cement. The corresponding difference of diffusion coefficients is 40.6%. This could be correlated with the difference of Ca/Si ratios between cements of two kinds. (authors)

  3. Acetic and Acrylic Acid Molecular Imprinted Model Silicone Hydrogel Materials for Ciprofloxacin-HCl Delivery

    Directory of Open Access Journals (Sweden)

    Lyndon Jones

    2012-01-01

    Full Text Available Contact lenses, as an alternative drug delivery vehicle for the eye compared to eye drops, are desirable due to potential advantages in dosing regimen, bioavailability and patient tolerance/compliance. The challenge has been to engineer and develop these materials to sustain drug delivery to the eye for a long period of time. In this study, model silicone hydrogel materials were created using a molecular imprinting strategy to deliver the antibiotic ciprofloxacin. Acetic and acrylic acid were used as the functional monomers, to interact with the ciprofloxacin template to efficiently create recognition cavities within the final polymerized material. Synthesized materials were loaded with 9.06 mM, 0.10 mM and 0.025 mM solutions of ciprofloxacin, and the release of ciprofloxacin into an artificial tear solution was monitored over time. The materials were shown to release for periods varying from 3 to 14 days, dependent on the loading solution, functional monomer concentration and functional monomer:template ratio, with materials with greater monomer:template ratio (8:1 and 16:1 imprinted tending to release for longer periods of time. Materials with a lower monomer:template ratio (4:1 imprinted tended to release comparatively greater amounts of ciprofloxacin into solution, but the release was somewhat shorter. The total amount of drug released from the imprinted materials was sufficient to reach levels relevant to inhibit the growth of common ocular isolates of bacteria. This work is one of the first to demonstrate the feasibility of molecular imprinting in model silicone hydrogel-type materials.

  4. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    International Nuclear Information System (INIS)

    Yin, Lan; Harburg, Daniel V.; Rogers, John A.; Bozler, Carl; Omenetto, Fiorenzo

    2015-01-01

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems

  5. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Lan; Harburg, Daniel V.; Rogers, John A., E-mail: jrogers@illinois.edu [Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S Goodwin Ave., Urbana, Illinois 61801 (United States); Bozler, Carl [Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420 (United States); Omenetto, Fiorenzo [Department of Biomedical Engineering, Department of Physics, Tufts University, 4 Colby St., Medford, Massachusetts 02155 (United States)

    2015-01-05

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

  6. Intensifying the Casimir force between two silicon substrates within three different layers of materials

    International Nuclear Information System (INIS)

    Seyedzahedi, A.; Moradian, A.; Setare, M.R.

    2016-01-01

    We investigate the Casimir force for a system composed of two thick slabs as substrates within three different homogeneous layers. We use the scattering approach along with the Matsubara formalism in order to calculate the Casimir force at finite temperature. First, we focus on constructing the reflection matrices and then we calculate the Casimir force for a water–lipid system. According to the conventional use of silicon as a substrate, we apply the formalism to calculate the Casimir force for layers of Au, VO 2 , mica, KCl and foam rubber on the thick slabs of silicon. Afterwards, introducing an increasing factor, we compare our results with Lifshitz force in the vacuum between two semispaces of silicon in order to illustrate the influence of the layers on intensifying the Casimir force. We also calculate the Casimir force between two slabs of the forementioned materials with finite thicknesses to indicate the substrate's role in increasing the obtained Casimir force. Our simple calculation is interesting since one can extend it along with the Rigorous Coupled Wave Analysis to systems containing inhomogeneous layers as good candidates for designing nanomechanical devices.

  7. Intensifying the Casimir force between two silicon substrates within three different layers of materials

    Energy Technology Data Exchange (ETDEWEB)

    Seyedzahedi, A. [Department of Science, University of Kurdistan, Sanandaj (Iran, Islamic Republic of); Moradian, A., E-mail: a.moradian@uok.ac.ir [Department of Science, Campus of Bijar, University of Kurdistan, Bijar (Iran, Islamic Republic of); Setare, M.R., E-mail: rezakord@ipm.ir [Department of Science, University of Kurdistan, Sanandaj (Iran, Islamic Republic of)

    2016-04-01

    We investigate the Casimir force for a system composed of two thick slabs as substrates within three different homogeneous layers. We use the scattering approach along with the Matsubara formalism in order to calculate the Casimir force at finite temperature. First, we focus on constructing the reflection matrices and then we calculate the Casimir force for a water–lipid system. According to the conventional use of silicon as a substrate, we apply the formalism to calculate the Casimir force for layers of Au, VO{sub 2}, mica, KCl and foam rubber on the thick slabs of silicon. Afterwards, introducing an increasing factor, we compare our results with Lifshitz force in the vacuum between two semispaces of silicon in order to illustrate the influence of the layers on intensifying the Casimir force. We also calculate the Casimir force between two slabs of the forementioned materials with finite thicknesses to indicate the substrate's role in increasing the obtained Casimir force. Our simple calculation is interesting since one can extend it along with the Rigorous Coupled Wave Analysis to systems containing inhomogeneous layers as good candidates for designing nanomechanical devices.

  8. Design and evaluation of carbon nanofiber and silicon materials for neural implant applications

    Science.gov (United States)

    McKenzie, Janice L.

    Reduction of glial scar tissue around central nervous system implants is necessary for improved efficacy in chronic applications. Design of materials that possess tunable properties inspired by native biological tissue and elucidation of pertinent cellular interactions with these materials was the motivation for this study. Since nanoscale carbon fibers possess the fundamental dimensional similarities to biological tissue and have attractive material properties needed for neural biomaterial implants, this present study explored cytocompatibility of these materials as well as modifications to traditionally used silicon. On silicon materials, results indicated that nanoscale surface features reduced astrocyte functions, and could be used to guide neurite extension from PC12 cells. Similarly, it was determined that astrocyte functions (key cells in glial scar tissue formation) were reduced on smaller diameter carbon fibers (125 nm or less) while PC12 neurite extension was enhanced on smaller diameter carbon fibers (100 nm or less). Further studies implicated laminin adsorption as a key mechanism in enhancing astrocyte adhesion to larger diameter fibers and at the same time encouraging neurite extension on smaller diameter fibers. Polycarbonate urethane (PCU) was then used as a matrix material for the smaller diameter carbon fibers (100 and 60 nm). These composites proved very versatile since electrical and mechanical properties as well as cell functions and directionality could be influenced by changing bulk and surface composition and features of these matrices. When these composites were modified to be smooth at the micronscale and only rough at the nanoscale, P19 cells actually submerged philopodia, extensions, or whole cells bodies beneath the PCU in order to interact with the carbon nanofibers. These carbon nanofiber composites that have been formulated are a promising material to coat neural probes and thereby enhance functionality at the tissue interface. This

  9. X-Ray Researches GF Siliconized Materials on Pyrocarbon Sheaf and on the Basis of Graphite of Mark EG-0

    International Nuclear Information System (INIS)

    Gurin, V.A.; Gurin, I.V.; Kovtun, G.P.; Malykhin, D.G.; Bukolov, A.N.

    2005-01-01

    A methodological addition to a quantitative analysis of binary phase structure of materials on measurements of X-ray lines intensities worked out conformably to research of siliconized graphitic materials. Distinctions in X-rays absorption factors of phase components at a various degree of phases mixture are taken into account. An apparatus of the probability theory is applied. A parameter of mixture degree of phases is submitted as a specific area size of interphase. Quantitative X-ray researches of a phase structure of siliconized materials are carried out on the basis of carbon fabrics and graphitic powders; both were sheafed by pyrocarbon. In examined samples structures C-SiC and SiC-Si were obtained. The correlation of the phase structure of materials with the apparent density of the initial carbon basis is seen. The opportunity of a practical obtaining of materials with the host degree of their siliconizing is confirmed

  10. Novel scalable silicone elastomer and poly(2-hydroxyethyl methacrylate) (PHEMA) composite materials for tissue engineering and drug delivery applications

    DEFF Research Database (Denmark)

    Mohanty, Soumyaranjan; Hemmingsen, Mette; Wojcik, Magdalena

    2013-01-01

    material with increased hydrophilicity in regard to virgin silicone elastomer, making it suitable as a scaffold for tissue engineering and with the concomitant possibility for delivering drug from the scaffold to the tissue. Interpenetrating polymer networks (IPNs) of silicone elastomer and PHEMA......In recent years hydrogels have received increasing attention as potential materials for applications in regenerative medicine. They can be used for scaffold materials providing structural integrity to tissue constructs, for controlled delivery of drugs and proteins to cell and tissues......, and for support materials in tissue growth. However, the real challenge is to obtain sufficiently good mechanical properties of the hydrogel. The present study shows the combination of two normally non-compatible materials, silicone elastomer and poly(2-hydroxyethyl methacrylate) (PHEMA), into a novel composite...

  11. Comparison of pad detectors produced on different silicon materials after irradiation with neutrons, protons and pions

    International Nuclear Information System (INIS)

    Kramberger, G.; Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

    2010-01-01

    A set of 44 pad detectors produced on p- and n-type MCz and Fz wafers was irradiated with 23 GeV protons, 200 MeV pions and reactor neutrons up to the equivalent fluences of Φ eq =3x10 15 cm -2 . The evolution of the full depletion voltage and the leakage current were monitored during short- and long-term annealing. At selected representative annealing steps, charge collection measurements were performed for all samples with LHC speed electronics. Measurements of full depletion voltage, leakage current and charge collection efficiency were compared for different irradiation particles and silicon materials.

  12. Comparison of pad detectors produced on different silicon materials after irradiation with neutrons, protons and pions

    Energy Technology Data Exchange (ETDEWEB)

    Kramberger, G., E-mail: Gregor.Kramberger@ijs.s [Jozef Stefan Institute and Department of Physics, University of Ljubljana, SI-1000 Ljubljana (Slovenia); Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M. [Jozef Stefan Institute and Department of Physics, University of Ljubljana, SI-1000 Ljubljana (Slovenia)

    2010-01-01

    A set of 44 pad detectors produced on p- and n-type MCz and Fz wafers was irradiated with 23 GeV protons, 200 MeV pions and reactor neutrons up to the equivalent fluences of PHI{sub eq}=3x10{sup 15}cm{sup -2}. The evolution of the full depletion voltage and the leakage current were monitored during short- and long-term annealing. At selected representative annealing steps, charge collection measurements were performed for all samples with LHC speed electronics. Measurements of full depletion voltage, leakage current and charge collection efficiency were compared for different irradiation particles and silicon materials.

  13. Current and future priorities for mass and material in silicon PV module recycling

    Energy Technology Data Exchange (ETDEWEB)

    Olson, C.L.; Geerligs, L.J.; Goris, M.J.A.A.; Bennett, I.J. [ECN Solar Energy, P.O. Box 1, 1755 ZG Petten (Netherlands); Clyncke, J. [PV CYCLE, Rue Montoyer 23, 1000 Brussels (Belgium)

    2013-10-15

    A full description of the state-of-the-art PV recycling methods and their rationale is presented, which discusses the quality of the recycled materials and the fate of the substances which end up in the landfill. The aim is to flag the PV module components currently not recycled, which may have a priority in terms of their embedded energy, chemical nature or scarcity, for the next evolution of recycling. The sustainability of different recycling options, emerging in the literature on electronic waste recycling, and the possible improvement of the environmental footprint of silicon PV modules, will be discussed.

  14. Determination of silicon in biological and botanical reference materials by epithermal INAA and Compton suppression

    International Nuclear Information System (INIS)

    Landsberger, S.; Peshev, S.; Becker, D.A.

    1994-01-01

    Silicon determination in sixteen botanical and biological standard reference materials is described using the 29 Si(n, p) 29 Al reaction through instrumental epithermal neutron activation analysis and Compton suppression gamma-ray spectroscopy. By simultaneous utilization of both cadmium and boron epithermal filters along with anticoincidence gamma-counting, detection limits as low as 12 ppm were obtained for certain matrices, much lower than previously reported values for this type of analysis. The method is applicable to many botanical and biological matrices and is attractive with its interference free, purely instrumental nature, compared with methods using the 28 Si(n, p) 28 Al reaction or chemical separation techniques. ((orig.))

  15. Effect of Projectile Materials on Foreign Object Damage of a Gas-Turbine Grade Silicon Nitride

    Science.gov (United States)

    Choi, Sung R.; Racz, Zsolt; Bhatt, Ramakrishna T.; Brewer, David N.; Gyekenyesi, John P.

    2005-01-01

    Foreign object damage (FOD) behavior of AS800 silicon nitride was determined using four different projectile materials at ambient temperature. The target test specimens rigidly supported were impacted at their centers by spherical projectiles with a diameter of 1.59 mm. Four different types of projectiles were used including hardened steel balls, annealed steel balls, silicon nitride balls, and brass balls. Post-impact strength of each target specimen impacted was determined as a function of impact velocity to better understand the severity of local impact damage. The critical impact velocity where target specimens fail upon impact was highest with brass balls, lowest with ceramic ball, and intermediate with annealed and hardened steel balls. Degree of strength degradation upon impact followed the same order as in the critical impact velocity with respect to projectile materials. For steel balls, hardened projectiles yielded more significant impact damage than annealed counterparts. The most important material parameter affecting FOD was identified as hardness of projectiles and was correlated in terms of critical impact velocity, impact deformation, and impact load.

  16. Characterization of silicon sensor materials and designs for the CMS Tracker Upgrade

    CERN Document Server

    Dierlamm, Alexander Hermann

    2012-01-01

    During the high luminosity phase of the LHC (HL-LHC, starting around 2020) the inner tracking system of CMS will be exposed to harsher conditions than the current system was designed for. Therefore a new tracker is planned to cope with higher radiation levels and higher occupancies. Within the strip sensor developments of CMS a comparative survey of silicon materials and technologies is being performed in order to identify the baseline material for the future tracker. Hence, a variety of materials (float-zone, magnetic Czochralski and epitaxially grown silicon with thicknesses from 50$\\mu$m to 320$\\mu$m as p- and n-type) has been processed at one company (Hamamatsu Photonics K.K.), irradiated (proton, neutron and mixed irradiations up to 1.5e15n$_{eq}$/cm$^2$ and beyond) and tested under identical conditions. The wafer layout includes a variety of devices to investigate different aspects of sensor properties like simple diodes, test-structures, small strip sensors and a strip sensor array with varying strip p...

  17. Report of the Material Control and Material Accounting Task Force: the role of material control and material accounting in the safeguards program

    International Nuclear Information System (INIS)

    1978-03-01

    Results are presented of NRC Task Force investigations to identify the functions of a safeguards program in relation to the NRC safeguards objective, define the role and objectives of material control and material accounting systems within that program, develop goals for material control and material accounting based on those roles and objectives, assess current material control and material accounting requirements and performance levels in the light of the goals, and recommend future actions needed to attain the proposed goals. It was found that the major contribution of material accounting to the safeguards program is in support of the assurance function. It also can make secondary contributions to the prevention and response functions. In the important area of loss detection, a response measure, it is felt that limitations inherent in material accounting for some fuel cycle operations limit its ability to operate as a primary detection system to detect a five formula kilogram loss with high assurance (defined by the Task Force as a probability of detection of 90 percent or more) and that, in those cases, material accounting can act only in a backup role. Physical security and material control must make the primary contributions to the prevention and detection of theft, so that safeguards do not rely primarily for detection capabilities on material accounting. There are several areas of accounting that require more emphasis than is offered by the current regulatory base. These areas include: timely shipper-receiver difference analysis and reconciliation; a demand physical inventory capability; improved loss localization;discard measurement verification; timely recovery of scrap; improved measurement and record systems; and limits on cumulative inventory differences and shipper-receiver differences. An increased NRC capability for monitoring and analyzing licensee accounting data and more timely and detailed submittals of data to NRC by licensees are recommended

  18. Recent Progress in Synthesis and Application of Low-Dimensional Silicon Based Anode Material for Lithium Ion Battery

    Directory of Open Access Journals (Sweden)

    Yuandong Sun

    2017-01-01

    Full Text Available Silicon is regarded as the next generation anode material for LIBs with its ultra-high theoretical capacity and abundance. Nevertheless, the severe capacity degradation resulting from the huge volume change and accumulative solid-electrolyte interphase (SEI formation hinders the silicon based anode material for further practical applications. Hence, a variety of methods have been applied to enhance electrochemical performances in terms of the electrochemical stability and rate performance of the silicon anodes such as designing nanostructured Si, combining with carbonaceous material, exploring multifunctional polymer binders, and developing artificial SEI layers. Silicon anodes with low-dimensional structures (0D, 1D, and 2D, compared with bulky silicon anodes, are strongly believed to have several advanced characteristics including larger surface area, fast electron transfer, and shortened lithium diffusion pathway as well as better accommodation with volume changes, which leads to improved electrochemical behaviors. In this review, recent progress of silicon anode synthesis methodologies generating low-dimensional structures for lithium ion batteries (LIBs applications is listed and discussed.

  19. 3D printing PLA and silicone elastomer structures with sugar solution support material

    Science.gov (United States)

    Hamidi, Armita; Jain, Shrenik; Tadesse, Yonas

    2017-04-01

    3D printing technology has been used for rapid prototyping since 1980's and is still developing in a way that can be used for customized products with complex design and miniature features. Among all the available 3D printing techniques, Fused Deposition Modeling (FDM) is one of the most widely used technologies because of its capability to build different structures by employing various materials. However, complexity of parts made by FDM is greatly limited by restriction of using support materials. Support materials are often used in FDM for several complex geometries such as fully suspended shapes, overhanging surfaces and hollow features. This paper describes an approach to 3D print a structure using silicone elastomer and polylactide fiber (PLA) by employing a novel support material that is soluble in water. This support material is melted sugar which can easily be prepared at a low cost. Sugar is a carbohydrate, which is found naturally in plants such as sugarcane and sugar beets; therefore, it is completely organic and eco-friendly. As another advantage, the time for removing this material from the part is considerably less than other commercially available support materials and it can be removed easily by warm water without leaving any trace. Experiments were done using an inexpensive desktop 3D printer to fabricate complex structures for use in soft robots. The results envision that further development of this system would contribute to a method of fabrication of complex parts with lower cost yet high quality.

  20. Energy Conversion Properties of ZnSiP2, a Lattice-Matched Material for Silicon-Based Tandem Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, Aaron D.; Warren, Emily L.; Gorai, Prashun; Borup, Kasper A.; Krishna, Lakshmi; Kuciauskas, Darius; Dippo, Patricia C.; Ortiz, Brenden R.; Stradins, Paul; Stevanovic, Vladan; Toberer, Eric S.; Tamboli, Adele C.

    2016-11-21

    ZnSiP2 demonstrates promising potential as an optically active material on silicon. There has been a longstanding need for wide band gap materials that can be integrated with Si for tandem photovoltaics and other optoelectronic applications. ZnSiP2 is an inexpensive, earth abundant, wide band gap material that is stable and lattice matched with silicon. This conference proceeding summarizes our PV-relevant work on bulk single crystal ZnSiP2, highlighting the key findings and laying the ground work for integration into Si-based tandem devices.

  1. Charge transfer processes in hybrid solar cells composed of amorphous silicon and organic materials

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Sebastian; Neher, Dieter [Universitaet Potsdam, Inst. Physik u. Astronomie, Karl-Liebknecht-Strasse 24/25, 14467 Potsdam-Golm (Germany); Schulze, Tim; Korte, Lars [Helmholtz Zentrum Berlin, Inst. fuer Silizium Photovoltaik, Kekulestrasse 5, 12489 Berlin (Germany)

    2011-07-01

    The efficiency of hybrid solar cells composed of organic materials and amorphous hydrogenated silicon (a-Si:H) strongly depends upon the efficiency of charge transfer processes at the inorganic-organic interface. We investigated the performance of devices comprising an ITO/a-Si:H(n-type)/a-Si:H(intrinsic)/organic/metal multilayer structure and using two different organic components: zinc phthalocyanine (ZnPc) and poly(3-hexylthiophene) (P3HT). The results show higher power conversion- and quantum efficiencies for the P3HT based cells, compared to ZnPc. This can be explained by larger energy-level offset at the interface between the organic layer and a-Si:H, which facilitates hole transfer from occupied states in the valence band tail to the HOMO of the organic material and additionally promotes exciton splitting. The performance of the a-Si:H/P3HT cells can be further improved by treatment of the amorphous silicon surface with hydrofluoric acid (HF) and p-type doping of P3HT with F4TCNQ. The improved cells reached maximum power conversion efficiencies of 1%.

  2. Signals from fluorescent materials on the surface of silicon micro-strip sensors

    CERN Document Server

    Sperlich, Dennis; The ATLAS collaboration

    2018-01-01

    For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker (ITk). In order to minimise the amount of material in the ITk, circuit boards with readout electronics will be glued onto the active area of the sensor. Several adhesives, investigated to be used for the construction of detector modules, were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high-radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By positioning the beam parallel to the sensor surfave and pointing it both inside the sensor and above the sensor surface inside the deposited glue, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibilit...

  3. Report of the Material Control and Material Accounting Task Force: appendices

    International Nuclear Information System (INIS)

    1978-03-01

    Five appendixes are presented. The first comprises a chronological development of material control and material accounting requirements. The second gives a description of current NRC control and material accounting requirements, practices, and capabilities. In the third a description is given of NRC's research and technical assistance program concerning the measurement and measurement quality control elements of licensee material control and material accounting systems. The fourth covers some special considerations related to inventory differences and their analysis. In the fifth a detailed description is presented of the evaluation methodologies used in development of improved material control and material accounting systems

  4. Irradiation study of different silicon materials for the CMS tracker upgrade

    International Nuclear Information System (INIS)

    Erfle, Joachim

    2014-05-01

    Around 2022, an upgrade of the LHC collider complex is planned to significantly increase the luminosity (the High Luminosity LHC, HL-LHC). This means that the experiments have to cope with a higher number of collisions per bunch crossing and survive in a radiation environment much harsher than that at the present LHC. Especially the tracking detectors have to be improved for the HL-LHC. The increased number of tracks requires an increase of the number of readout channels while the higher radiation makes new sensor materials necessary. Within CMS, a measurement campaign was initiated to study the performance of different silicon materials in a corresponding radiation environment. To simulate the expected radiation the samples were irradiated with neutrons and with protons with two different energies. Radiation damage can be divided in two categories. First, ionizing energy loss in the surface isolation layers of the sensor leads to a change of the concentration of charged states in the sensor surface and therefore alters the distribution of the electrical fields in the sensor. Second, non-ionizing energy loss in the bulk of the sensor material leads to a variety of defects in the silicon lattice. Electrically active defects can influence the material properties. The three properties under investigation are the reverse current, the full depletion voltage and the charge collection. While the reverse current and full depletion voltage influence the power dissipation and the noise of the detector, the charge collection directly influences the measurement. The material properties were studied using pad and strip sensor. The structures were electrically characterized before and after irradiation with different fluences of neutrons and protons, corresponding to the expected fluences at different radii of the outer tracker after 3000 fb -1 . The charge collection measurements were mainly performed using the ALiBaVa readout system and the charge was induced with

  5. Dependence of behavioral performance on material category in an object grasping task with monkeys.

    Science.gov (United States)

    Yokoi, Isao; Tachibana, Atsumichi; Minamimoto, Takafumi; Goda, Naokazu; Komatsu, Hidehiko

    2018-05-02

    Material perception is an essential part of our cognitive function that enables us to properly interact with our complex daily environment. One important aspect of material perception is its multimodal nature. When we see an object, we generally recognize its haptic properties as well as its visual properties. Consequently, one must examine behavior using real objects that are perceived both visually and haptically to fully understand the characteristics of material perception. As a first step, we examined whether there is any difference in the behavioral responses to different materials in monkeys trained to perform an object grasping task in which they saw and grasped rod-shaped real objects made of various materials. We found that the monkeys' behavior in the grasping task, measured based on the success rate and the pulling force, differed depending on the material category. Monkeys easily and correctly grasped objects of some materials, such as metal and glass, but failed to grasp objects of other materials. In particular, monkeys avoided grasping fur-covered objects. The differences in the behavioral responses to the material categories cannot be explained solely based on the degree of familiarity with the different materials. These results shed light on the organization of multimodal representation of materials, where their biological significance is an important factor. In addition, a monkey that avoided touching real fur-covered objects readily touched images of the same objects presented on a CRT display. This suggests employing real objects is important when studying behaviors related to material perception.

  6. Use of Silicon Carbide as Beam Intercepting Device Material: Tests, Issues and Numerical Simulations

    CERN Document Server

    Delonca, M; Gil Costa, M; Vacca, A

    2014-01-01

    Silicon Carbide (SiC) stands as one of the most promising ceramic material with respect to its thermal shock resistance and mechanical strengths. It has hence been considered as candidate material for the development of higher performance beam intercepting devices at CERN. Its brazing with a metal counterpart has been tested and characterized by means of microstructural and ultrasound techniques. Despite the positive results, its use has to be evaluated with care, due to the strong evidence in literature of large and permanent volumetric expansion, called swelling, under the effect of neutron and ion irradiation. This may cause premature and sudden failure, and can be mitigated to some extent by operating at high temperature. For this reason limited information is available for irradiation below 100°C, which is the typical temperature of interest for beam intercepting devices like dumps or collimators. This paper describes the brazing campaign carried out at CERN, the results, and the theoretical and numeric...

  7. Contactless Spectral-dependent Charge Carrier Lifetime Measurements in Silicon Photovoltaic Materials

    Science.gov (United States)

    Roller, John; Hamadani, Behrang; Dagenais, Mario

    Charge carrier lifetime measurements in bulk or unfinished photovoltaic (PV) materials allow for a more accurate estimate of power conversion efficiency in completed solar cells. In this work, carrier lifetimes in PV-grade silicon wafers are obtained by way of quasi-steady state photoconductance measurements. These measurements use a contactless RF system coupled with varying narrow spectrum input LEDs, ranging in wavelength from 460 nm to 1030 nm. Spectral dependent lifetime measurements allow for determination of bulk and surface properties of the material, including the intrinsic bulk lifetime and the surface recombination velocity. The effective lifetimes are fit to an analytical physics-based model to determine the desired parameters. Passivated and non-passivated samples are both studied and are shown to have good agreement with the theoretical model.

  8. Double-shelled silicon anode nanocomposite materials: A facile approach for stabilizing electrochemical performance via interface construction

    Science.gov (United States)

    Du, Lulu; Wen, Zhongsheng; Wang, Guanqin; Yang, Yan-E.

    2018-04-01

    The rapid capacity fading induced by volumetric changes is the main issue that hinders the widespread application of silicon anode materials. Thus, double-shelled silicon composite materials where lithium silicate was located between an Nb2O5 coating layer and a silicon active core were configured to overcome the chemical compatibility issues related to silicon and oxides. The proposed composites were prepared via a facile co-precipitation method combined with calcination. Transmission electron microscopy and X-ray photoelectron spectroscopy analysis demonstrated that a transition layer of lithium silicate was constructed successfully, which effectively hindered the thermal inter-diffusion between the silicon and oxide coating layers during heat treatment. The electrochemical performance of the double-shelled silicon composites was enhanced dramatically with a retained specific capacity of 1030 mAh g-1 after 200 cycles at a current density of 200 mA g-1 compared with 598 mAh g-1 for a core-shell Si@Nb2O5 composite that lacked the interface. The lithium silicate transition layer was shown to play an important role in maintaining the high electrochemical stability.

  9. Rolling-element fatigue life of silicon nitride balls. [as compared to that of steel, ceramic, and cermet materials

    Science.gov (United States)

    Parker, R. J.; Zaretsky, E. V.

    1974-01-01

    The five-ball fatigue tester was used to evaluate silicon nitride as a rolling-element bearing material. Results indicate that hot-pressed silicon nitride running against steel may be expected to yield fatigue lives comparable to or greater than those of bearing quality steel running against steel at stress levels typical rolling-element bearing application. The fatigue life of hot-pressed silicon nitride is considerably greater than that of any ceramic or cermet tested. Computer analysis indicates that there is no improvement in the lives of 120-mm-bore angular--contact ball bearings of the same geometry operating at DN values from 2 to 4 million where hot-pressed silicon nitride balls are used in place of steel balls.

  10. Penis augmentation by application of silicone material: complications and surgical treatment.

    Science.gov (United States)

    Sukop, A; Heracek, J; Mestak, O; Borský, J; Bayer, J; Schwarzmannová, K

    2013-01-01

    Complications resulting from enlargement of the penis by applications of unknown types of silicone and mineral oils are well described. Surgical removal of the tissue altered by inflammation leads to the development of defects of various sizes, often circular from the glans penis to the scrotum. The options of subsequent surgical treatment described in literature are not very extensive. Most defects are managed with skin grafting, rarely V-Y advancement or bilateral scrotal flaps. We present a 36-year-old patient after application of unknown silicone material into the penis for cosmetic enlargement. After the application developed severe inflammation with ulceration and necrosis around the penis. Conservative treatment was not effective, therefore, the infiltrated skin with subcutaneous tissue of the entire penis was surgically removed. The resulting defect was covered by implantation of the penis under the skin of the scrotum. There were no complications in the postoperative course, pain that was present before the surgery immediately subsided. Skin suture healed completely within 14 days. Three months after the surgery the patient returned to normal sexual life. Implantation of the penis under the skin of the scrotum is a fast, safe and effective method that can treat most of the circular skin defects of the penis. Scrotal skin is thin, soft, elastic and creates abundant and good cover around the entire penis.

  11. Aluminum and silicon based phase change materials for high capacity thermal energy storage

    International Nuclear Information System (INIS)

    Wang, Zhengyun; Wang, Hui; Li, Xiaobo; Wang, Dezhi; Zhang, Qinyong; Chen, Gang; Ren, Zhifeng

    2015-01-01

    Six compositions of aluminum (Al) and silicon (Si) based materials: 87.8Al-12.2Si, 80Al–20Si, 70Al–30Si, 60Al–40Si, 45Al–40Si–15Fe, and 17Al–53Si–30Ni (atomic ratio), were investigated for potentially high thermal energy storage (TES) application from medium to high temperatures (550–1200 °C) through solid–liquid phase change. Thermal properties such as melting point, latent heat, specific heat, thermal diffusivity and thermal conductivity were investigated by differential scanning calorimetry and laser flash apparatus. The results reveal that the thermal storage capacity of the Al–Si materials increases with increasing Si concentration. The melting point and latent heat of 45Al–40Si–15Fe and 17Al–53Si–30Ni are ∼869 °C and ∼562 J g −1 , and ∼1079 °C and ∼960 J g −1 , respectively. The measured thermal conductivity of Al–Si binary materials depend on Si concentration and is higher than 80 W m −1  K −1 from room temperature to 500 °C, which is almost two orders of magnitude higher than those of salts that are commonly used phase change material for thermal energy storage. - Highlights: • Six kinds of materials were investigated for thermal energy storage (550–1200 °C). • Partial melting of Al–Si materials show progressively changing temperatures. • Studied materials can be used in three different working temperature ranges. • Materials are potentially good candidates for thermal energy storage applications.

  12. The effects of glucose dose and dual-task performance on memory for emotional material.

    Science.gov (United States)

    Brandt, Karen R; Sünram-Lea, Sandra I; Jenkinson, Paul M; Jones, Emma

    2010-07-29

    Whilst previous research has shown that glucose administration can boost memory performance, research investigating the effects of glucose on memory for emotional material has produced mixed findings. Whereas some research has shown that glucose impairs memory for emotional material, other research has shown that glucose has no effect on emotional items. The aim of the present research was therefore to provide further investigation of the role of glucose on the recognition of words with emotional valence by exploring effects of dose and dual-task performance, both of which affect glucose facilitation effects. The results replicated past research in showing that glucose administration, regardless of dose or dual-task conditions, did not affect the memorial advantage enjoyed by emotional material. This therefore suggests an independent relationship between blood glucose levels and memory for emotional material. Copyright 2010 Elsevier B.V. All rights reserved.

  13. Results and recommendations from the reactor chemistry and corrosion tasks of the reactor materials program

    International Nuclear Information System (INIS)

    Baumann, E.W.; Ondrejcin, R.S.

    1990-11-01

    Within the general context of extended service life, the Reactor Materials Program was initiated in 1984. This comprehensive program addressed material performance in SRS reactor tanks and the primary coolant or Process Water System (PWS) piping. Three of the eleven tasks concerned moderator quality and corrosion mitigation. Definition and control of the stainless steel aqueous environment is a key factor in corrosion mitigation. The Reactor Materials Program systematically investigated the SRS environment and its effect on crack initiation and propagation in stainless steel, with the objective of improving this environment. The purpose of this report is to summarize the contributions of Tasks 6, 7 and 10 of the Reactor Materials Program to the understanding and control of moderator quality and its relationship to mitigation of stress corrosion cracking

  14. Effects of Non-equilibrium Solidification on the Material Properties of Brick Silicon for Photovoltaics

    Science.gov (United States)

    Regnault, W. F.; Yoo, K. C.; Soltani, P. K.; Johnson, S. M.

    1984-01-01

    Silicon ingot growth technologies like the Ubiquitous Crystallization Process (UCP) are solidified within a shaping crucible. The rate at which heat can be lost from this crucible minus the rate at which heat is input from an external source determines the rate at which crystallization will occur. Occasionally, when the process parameters for solidification are exceeded, the normally large multi-centimeter grain size material assocated with the UCP will break down into regions containing extremely small, millimeter or less, grain size material. Accompanying this breakdown in grain growth is the development of so called sinuous grain boundaries. The breakdown in grain growth which results in this type of small grain structure with sinuous boundaries is usually associated with the rapid crystallization that would accompany a system failure. This suggests that there are limits to the growth velocity that one can obtain and still expect to produce material that would possess good photovoltaic properties. It is the purpose to determine the causes behind the breakdown of this material and what parameters will determine the best rates of solidification.

  15. Elementary Students' Learning of Materials Science Practices Through Instruction Based on Engineering Design Tasks

    Science.gov (United States)

    Wendell, Kristen Bethke; Lee, Hee-Sun

    2010-12-01

    Materials science, which entails the practices of selecting, testing, and characterizing materials, is an important discipline within the study of matter. This paper examines how third grade students' materials science performance changes over the course of instruction based on an engineering design challenge. We conducted a case study of nine students who participated in engineering design-based science instruction with the goal of constructing a stable, quiet, thermally comfortable model house. The learning outcome of materials science practices was assessed by clinical interviews conducted before and after the instruction, and the learning process was assessed by students' workbooks completed during the instruction. The interviews included two materials selection tasks for designing a sturdy stepstool and an insulated pet habitat. Results indicate that: (1) students significantly improved on both materials selection tasks, (2) their gains were significantly positively associated with the degree of completion of their workbooks, and (3) students who were highly engaged with the workbook's reflective record-keeping tasks showed the greatest improvement on the interviews. These findings suggest the important role workbooks can play in facilitating elementary students' learning of science through authentic activity such as engineering design.

  16. Report of the Material Control and Material Accounting Task Force: blueprint for the future

    International Nuclear Information System (INIS)

    1978-03-01

    A blueprint is presented for the development of improved material control and material accounting systems by integrating the goals and capabilities of material control and material accounting and recommending specific upgrading actions. An analysis is included of several specific issues and developing recommendations for future actions related to those issues. It is felt that there is a need for a program to define specific quantified goals for an integrated safeguards program, and to monitor safeguards programs in terms of these goals. NRC should give highest priority to developing regulations and guides that will enable material control to make a greater contribution to safeguards by providing greater timeliness and sensitivity in detecting and assessing material losses. It is recommended that a technical study be conducted to determine a quantitative measure or at least a figure of merit for the effectiveness of a security clearance program, based upon full field background investigations, in protecting against malevolent conspiracies involving two or more security cleared individuals. It is also recommended that a specific effort be initiated to formulate an approach to combating collusion. This effort should specifically consider the contribution that material control and material accounting programs can make to safeguards effectiveness in this area

  17. Ninth workshop on crystalline silicon solar cell materials and processes: Summary discussion sessions

    International Nuclear Information System (INIS)

    Sopori, B.; Tan, T.; Swanson, D.; Rosenblum, M.; Sinton, R.

    1999-01-01

    This report is a summary of the panel discussions included with the Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme for the workshop was ''R and D Challenges and Opportunities in Si Photovoltaics''. This theme was chosen because it appropriately reflects a host of challenges that the growing production of Si photovoltaics will be facing in the new millennium. The anticipated challenges will arise in developing strategies for cost reduction, increased production, higher throughput per manufacturing line, new sources of low-cost Si, and the introduction of new manufacturing processes for cell production. At the same time, technologies based on CdTe and CIS will come on line posing new competition. With these challenges come new opportunities for Si PV to wean itself from the microelectronics industry, to embark on a more aggressive program in thin-film Si solar cells, and to try new approaches to process monitoring

  18. Terahertz optical-Hall effect for multiple valley band materials: n-type silicon

    International Nuclear Information System (INIS)

    Kuehne, P.; Hofmann, T.; Herzinger, C.M.; Schubert, M.

    2011-01-01

    The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial anisotropy. In this work we employ the optical-Hall effect at terahertz frequencies for analysis of free-charge carrier properties in multiple valley band materials, for which the optical free-charge carrier contributions originate from multiple Brillouin-zone conduction or valence band minima or maxima, respectively. We investigate exemplarily the room temperature optical-Hall effect in low phosphorous-doped n-type silicon where free electrons are located in six equivalent conduction-band minima near the X-point. We simultaneously determine their free-charge carrier concentration, mobility, and longitudinal and transverse effective mass parameters.

  19. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  20. Influence of epoxy resin as encapsulation material of silicon photovoltaic cells on maximum current

    Directory of Open Access Journals (Sweden)

    Acevedo-Gómez David

    2017-01-01

    Full Text Available This work presents an analysis about how the performance of silicon photovoltaic cells is influenced by the use of epoxy resin as encapsulation material with flat roughness. The effect of encapsulation on current at maximum power of mono-crystalline cell was tested indoor in a solar simulator bench at 1000 w/m² and AM1.5G. The results show that implementation of flat roughness layer onto cell surface reduces the maximum current inducing on average 2.7% less power with respect to a cell before any encapsulation. The losses of power and, in consequence, the less production of energy are explained by resin light absorption, reflection and partially neutralization of non-reflective coating.

  1. Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials

    Science.gov (United States)

    Kaiser, Natalie; Croell, Arne; Szofran, F. R.; Cobb. S. D.; Dold, P.; Benz, K. W.

    1999-01-01

    During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.

  2. Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

    KAUST Repository

    Bahabry, Rabab R.

    2017-01-01

    . However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption

  3. Revisa milestones report. Task 2.1: development of material models

    International Nuclear Information System (INIS)

    Nicolas, L.

    1998-01-01

    This report is the CEA contribution to the Milestone report of the REVISA project (Task 2.1). This task is particularly devoted to the development of advanced material models. CEA uses two different constitutive concepts. The first model is a coupled damage-visco-plasticity model proposed by Lemaitre and Chaboche. The second model is a non unified visco-plasticity model proposed by Contesti and Cailletaud, where the classical decomposition of the total inelastic strain into a time independent plastic part and a time dependent creep part is assumed. The introduction of isotropic damage in this model is part of the developments presented in this report. (author)

  4. Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

    Science.gov (United States)

    1983-01-01

    Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

  5. Tenth Workshop on Crystalline Silicon Solar Cell Materials and Processes: A Summary of Discussion Sessions

    Energy Technology Data Exchange (ETDEWEB)

    Tan, T.; Swanson, D.; Sinton, R.; Sopori, B.

    2001-01-22

    The 10th Workshop on Silicon Solar Cell Materials and Processes was held in Copper Mountain, Colorado, on August 13-16, 2000. The workshop was attended by 85 scientists and engineers from 15 international photovoltaic (PV) companies and 24 research institutions. Review and poster presentations were augmented by discussion sessions to address the recent progress and critical issues in meeting the goals for Si in the PV Industry Roadmap. The theme of the workshop was Si Photovoltaics: 10 Years of Progress and Opportunities for the Future. Two special sessions were held: Advanced Metallization and Interconnections - covering recent advances in solar cell metallization, printed contacts and interconnections, and addressing new metallization schemes for low-cost cell interconnections; and Characterization Methods - addressing the growing need for process monitoring techniques in the PV industry. The following major issues emerged from the discussion sessions: (1) Mechanical breakage in the P V industry involves a large fraction, about 5%-10%, of the wafers. (2) The current use of Al screen-printed back-contacts appears to be incompatible with the PV Industry Roadmap requirements. (3) The PV manufacturers who use hydrogen passivation should incorporate the plasma-enhanced chemical vapor deposited (PECVD) nitride for antireflection coating and hydrogenation. (4) There is an imminent need to dissolve metallic precipitates to minimize the electrical shunt problem caused by the ''bad'' regions in wafers. (5) Industry needs equipment for automated, in-line monitoring and testing. There are simply not many tools available to industry. (6) In the Wrap-Up Session of the workshop, there was consensus to create four industry/university teams that would address critical research topics in crystalline silicon. (7) The workshop attendees unanimously agreed that the workshop has served well the PV community by promoting the fundamental understanding of industrial

  6. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    CERN Document Server

    Czapski, M; Tardivat, C; Stora, T; Bouville, F; Leloup, J; Luis, R Fernandes; Augusto, R Santos

    2013-01-01

    New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLORA codes. (C) 2013 Elsevier B.V. All rights reserved.

  7. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    Science.gov (United States)

    Czapski, M.; Stora, T.; Tardivat, C.; Deville, S.; Santos Augusto, R.; Leloup, J.; Bouville, F.; Fernandes Luis, R.

    2013-12-01

    New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

  8. Graphene synthesized on porous silicon for active electrode material of supercapacitors

    Science.gov (United States)

    Su, B. B.; Chen, X. Y.; Halvorsen, E.

    2016-11-01

    We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm2 while that without catalyst layer was 145μF/cm2. We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors.

  9. Graphene synthesized on porous silicon for active electrode material of supercapacitors

    International Nuclear Information System (INIS)

    Su, B B; Chen, X Y; Halvorsen, E

    2016-01-01

    We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm 2 while that without catalyst layer was 145μF/cm 2 . We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors. (paper)

  10. Pemanfaatan serat silicon carbon dan partikel alumina pada matrik aluminium untuk meningkatkan sifat mekanis material komposit

    Directory of Open Access Journals (Sweden)

    Ketut Suarsana

    2017-03-01

    Full Text Available Abstrak: Pemanfaatan penguat material komposit berbasis serat dan juga partikel pada pembuatan bahan komposit sekarang ini sangatpotensial untuk dikembangkan dan diteliti. Beragam sumber serat dan juga penguat dalam bentuk partikel bisa didapat dari seratalami dari tumbuh-tubuhan dan juga serat yang sudah dikenakan perlakuan sebelumnya. Indonesia memiliki potensi sumberalam yang sangat potensial terutama sebgai sumber serat dari tumbuhan juga berupa logam aluminium (bauxite dari fosil.Bahan ini dapat dimanfaatkan untuk kebutuhan masyarakat industri sebagai bahan dasar pembuatan komposit bermatrikAluminium dan sebagai penguat berupa serat maupun partikel alumina. Metode pembuatan Aluminum Matrix Composite (AMCdengan proses metalurgi serbuk pada gaya tekan/kompaksi 2,5 ton mengunakan alat press hydrolik, waktu penahanan 15menit, serta proses perlakuan pada variasi komposisi berat (%wt. Variasi komposisi penguat serat Silicon Carbon (SiC danAl2O3 (alumina pada matrik Aluminium adalah : 30% SiC + 0% Al203, 27% SiC + 3% Al203, 24% SiC + 6% Al203 dan 21% SiC+ 9% Al203 dengan matrik 70% Al, pada kondisi tempertaur 500oC, 550oC dan 600oC. Setelah material komposit terbentuk, diujiuntuk mengetahui sifat mekanik akibat pengaruh variasi komposisi antara matrik dan penguatan pada komposit. Uji karakteristikdilakukan di laboratorium untuk menggetahui sifat kekuatan dan kekerasan material komposit. Selanjutnya dicari hubunganantara sifat masing-masing komposisi penguat serat SiC dan Al2O3 pembentuk komposit yang dibuat untuk mengetahui manfaatdari penguat serat dan partikel alumina.Kata Kunci: Sifat kekuatan, kekerasan, serat SiC dan Al2O3 Abstract: Utilization reinforcement fiber-based composite material and particles in the manufacture of composite materials now havepotential to be developed and researched. Various sources of fiber and reinforcement in particle form can be obtained fromnatural fibers from plants and fiber that has been subjected to a

  11. Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

    OpenAIRE

    Tan, H.

    2015-01-01

    Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of photovoltaic (PV) devices which deploy the chemical-vapor-deposited hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) and their alloys as the absorber layers and doped ...

  12. Market Opportunity of Some Aluminium Silicon Alloys Materials through Changing the Casting Process

    Directory of Open Access Journals (Sweden)

    Delfim SOARES

    2012-08-01

    Full Text Available Fatigue is considered to be the most common mechanism by which engineering components fail, and it accounts for at least 90% of all service failures attributed to mechanical causes. Mechanical properties (tensile strength, tensile strain, Young modulus, etc as well as fatigue properties (fatigue life are very dependent on casting method. The most direct effects of casting techniques are on the metallurgical microstructure that bounds the mechanical properties. One of the important variables affected by the casting technique is the cooling rate which is well known to strongly restrict the microstructure. In the present research has been done a comparison of fatigue properties of two aluminum silicon alloys obtained by two casting techniques. It was observed that the fatigue life is increasing with 24% for Al12Si and 31% for AL18Si by using centrifugal casting process instead of gravity casting. This increasing in fatigue life means that a component tailored from materials obtained by centrifugal casting will stay longer in service. It was made an estimation of the time required to recover the costs of technology in order to use the centrifuge process that will allow to obtain materials with improved properties. The amortization can be achieved by using two different marketing techniques: through the release of the product at the old price and with much longer life of the component which means "same price - longer life", or increasing price, by highlighting new product performance which means "higher price - higher properties".

  13. Irradiation study of different silicon materials for the CMS tracker upgrade

    CERN Document Server

    Erfle, Joachim; Hansen, Wolfgang; Garutti, Erika

    Around 2022, an upgrade of the LHC collider complex is planned to significantly increase the luminosity (the High Luminosity LHC, HL-LHC). This means that the experiments have to cope with a higher number of collisions per bunch crossing and survive in a radiation environment much harsher than that at the present LHC. Especially the tracking detectors have to be improved for the HL-LHC. The increased number of tracks requires an increase of the number of readout channels while the higher radiation makes new sensor materials necessary. Within CMS, a measurement campaign was initiated to study the performance of different silicon materials in a corresponding radiation environment. To simulate the expected radiation the samples were irradiated with neutrons and with protons with two different energies. Radiation damage can be divided in two categories. First, ionizing energy loss in the surface isolation layers of the sensor leads to a change of the concentration of charged states in the sensor surface and there...

  14. Protein deposition on a lathe-cut silicone hydrogel contact lens material.

    Science.gov (United States)

    Subbaraman, Lakshman N; Woods, Jill; Teichroeb, Jonathan H; Jones, Lyndon

    2009-03-01

    To determine the quantity of total protein, total lysozyme, and the conformational state of lysozyme deposited on a novel, lathe-cut silicone hydrogel (SiHy) contact lens material (sifilcon A) after 3 months of wear. Twenty-four subjects completed a prospective, bilateral, daily-wear, 9-month clinical evaluation in which the subjects were fitted with a novel, custom-made, lathe-cut SiHy lens material. The lenses were worn for three consecutive 3-month periods, with lenses being replaced after each period of wear. After 3 months of wear, the lenses from the left eye were collected and assessed for protein analysis. The total protein deposited on the lenses was determined by a modified Bradford assay, total lysozyme using Western blotting and the lysozyme activity was determined using a modified micrococcal assay. The total protein recovered from the custom-made lenses was 5.3 +/- 2.3 microg/lens and the total lysozyme was 2.4 +/- 1.2 microg/lens. The denatured lysozyme found on the lenses was 1.9 +/- 1.0 microg/lens and the percentage of lysozyme denatured was 80 +/- 10%. Even after 3 months of wear, the quantity of protein and the conformational state of lysozyme deposited on these novel lens materials was very similar to that found on similar surface-coated SiHy lenses after 2 to 4 weeks of wear. These results indicate that extended use of the sifilcon A material is not deleterious in terms of the quantity and quality of protein deposited on the lens.

  15. Removal of Silicone Oil From Intraocular Lens Using Novel Surgical Materials

    Science.gov (United States)

    Paschalis, Eleftherios I.; Eliott, Dean; Vavvas, Demetrios G.

    2014-01-01

    Purpose To design, fabricate, and evaluate novel materials to remove silicone oil (SiO) droplets from intraocular lenses (IOL) during vitreoretinal surgery. Methods Three different designs were fabricated using soft lithography of polydimethylsiloxane (PDMS), three-dimensional (3D) inverse PDMS fabrication using water dissolvable particles, and atomic layer deposition (ALD) of alumina (Al2O3) on surgical cellulose fibers. Laboratory tests included static and dynamic contact angle (CA) measurements with water and SiO, nondestructive x-ray microcomputer tomography (micro-CT), and microscopy. SiO removal was performed in vitro and ex vivo using implantable IOLs and explanted porcine eyes. Results All designs exhibited enhanced hydrophobicity and oleophilicity. Static CA measurements with water ranged from 131° to 160° and with SiO CA approximately 0° in 120 seconds following exposure. Nondestructive x-ray analysis of the 3D PDMS showed presence of interconnected polydispersed porosity of 100 to 300 μm in diameter. SiO removal from IOLs was achieved in vitro and ex vivo using standard 20-G vitrectomy instrumentation. Conclusion Removal of SiO from IOLs can be achieved using materials with lower surface energy than that of the IOLs. This can be achieved using appropriate surface chemistry and surface topography. Three designs, with enhanced hydrophobic properties, were fabricated and tested in vitro and ex vivo. All materials remove SiO within an aqueous environment. Preliminary ex vivo results were very promising, opening new possibilities for SiO removal in vitreoretinal surgeries. Translational Relevance This is the first report of an instrument that can lead to successful removal of SiO from the surface of IOL. In addition to the use of this instrument/material in medicine it can also be used in the industry, for example, retrieval of oil spills from bodies of water. PMID:25237593

  16. Removal of Silicone Oil From Intraocular Lens Using Novel Surgical Materials.

    Science.gov (United States)

    Paschalis, Eleftherios I; Eliott, Dean; Vavvas, Demetrios G

    2014-09-01

    To design, fabricate, and evaluate novel materials to remove silicone oil (SiO) droplets from intraocular lenses (IOL) during vitreoretinal surgery. Three different designs were fabricated using soft lithography of polydimethylsiloxane (PDMS), three-dimensional (3D) inverse PDMS fabrication using water dissolvable particles, and atomic layer deposition (ALD) of alumina (Al 2 O 3 ) on surgical cellulose fibers. Laboratory tests included static and dynamic contact angle (CA) measurements with water and SiO, nondestructive x-ray microcomputer tomography (micro-CT), and microscopy. SiO removal was performed in vitro and ex vivo using implantable IOLs and explanted porcine eyes. All designs exhibited enhanced hydrophobicity and oleophilicity. Static CA measurements with water ranged from 131° to 160° and with SiO CA approximately 0° in 120 seconds following exposure. Nondestructive x-ray analysis of the 3D PDMS showed presence of interconnected polydispersed porosity of 100 to 300 μm in diameter. SiO removal from IOLs was achieved in vitro and ex vivo using standard 20-G vitrectomy instrumentation. Removal of SiO from IOLs can be achieved using materials with lower surface energy than that of the IOLs. This can be achieved using appropriate surface chemistry and surface topography. Three designs, with enhanced hydrophobic properties, were fabricated and tested in vitro and ex vivo. All materials remove SiO within an aqueous environment. Preliminary ex vivo results were very promising, opening new possibilities for SiO removal in vitreoretinal surgeries. This is the first report of an instrument that can lead to successful removal of SiO from the surface of IOL. In addition to the use of this instrument/material in medicine it can also be used in the industry, for example, retrieval of oil spills from bodies of water.

  17. Advanced Non-Destructive Assessment Technology to Determine the Aging of Silicon Containing Materials for Generation IV Nuclear Reactors

    Science.gov (United States)

    Koenig, T. W.; Olson, D. L.; Mishra, B.; King, J. C.; Fletcher, J.; Gerstenberger, L.; Lawrence, S.; Martin, A.; Mejia, C.; Meyer, M. K.; Kennedy, R.; Hu, L.; Kohse, G.; Terry, J.

    2011-06-01

    To create an in-situ, real-time method of monitoring neutron damage within a nuclear reactor core, irradiated silicon carbide samples are examined to correlate measurable variations in the material properties with neutron fluence levels experienced by the silicon carbide (SiC) during the irradiation process. The reaction by which phosphorus doping via thermal neutrons occurs in the silicon carbide samples is known to increase electron carrier density. A number of techniques are used to probe the properties of the SiC, including ultrasonic and Hall coefficient measurements, as well as high frequency impedance analysis. Gamma spectroscopy is also used to examine residual radioactivity resulting from irradiation activation of elements in the samples. Hall coefficient measurements produce the expected trend of increasing carrier concentration with higher fluence levels, while high frequency impedance analysis shows an increase in sample impedance with increasing fluence.

  18. Determinations of silicon and phosphorus in Pepperbush standard reference material by neutron activation and x-ray fluorescence methods

    International Nuclear Information System (INIS)

    Mizumoto, Yoshihiko; Nishio, Hirofumi; Hayashi, Takeshi; Kusakabe, Toshio; Iwata, Shiro.

    1987-01-01

    Silicon and phosphorus contents in Pepperbush standard reference material were determined by neutron activation and X-ray fluorescence methods. In neutron activation analysis, β-ray spectra of 32 P produced by 31 P(n,γ) 32 P reaction on Pepperbush and standard samples were measured by a low background β-ray spectrometer. In X-ray fluorescence analysis, the standard samples were prepared by mixing the Pepperbush powder with silicon dioxide and diammonium hydrogenphosphate. Characteristic X-rays from the samples were analyzed by a wavelength dispersive X-ray fluorescence spectrometer. From the β and X-ray intensities, silicon and phosphorus contents in Pepperbush were determined to be 1840 ± 80 and 1200 ± 50 μg g -1 , respectively. (author)

  19. The Impact of Authentic Materials and Tasks on Students’ Communicative Competence at a Colombian Language School

    Directory of Open Access Journals (Sweden)

    César Augusto Castillo Losada

    2017-01-01

    Full Text Available This article reports on a study carried out in a foreign language school at a Colombian public university. Its main purpose was to analyze the extent to which the use of authentic materials and tasks contributes to the enhancement of the communicative competence on an A2 level English course. A mixed study composed of a quasi-experimental and a descriptive-qualitative research design was implemented by means of a pre-test, a post-test, observations, semi-structured interviews, surveys, and diaries. The findings showed that the use of authentic materials and tasks, within the framework of a pedagogical project, had an impact on students’ communicative competence progress and on the teaching practices of the experimental group teacher.

  20. Study program to develop and evaluate die and container materials for the growth of silicon ribbons. [for development of low cost solar cells

    Science.gov (United States)

    Addington, L. A.; Ownby, P. D.; Yu, B. B.; Barsoum, M. W.; Romero, H. V.; Zealer, B. G.

    1979-01-01

    The development and evaluation of proprietary coatings of pure silicon carbide, silicon nitride, and aluminum nitride on less pure hot pressed substrates of the respective ceramic materials, is described. Silicon sessile drop experiments were performed on coated test specimens under controlled oxygen partial pressure. Prior to testing, X-ray diffraction and SEM characterization was performed. The reaction interfaces were characterized after testing with optical and scanning electron microscopy and Auger electron spectroscopy. Increasing the oxygen partial pressure was found to increase the molten silicon contact angle, apparently because adsorbed oxygen lowers the solid-vapor interfacial free energy. It was also found that adsorbed oxygen increased the degree of attack of molten silicon upon the chemical vapor deposited coatings. Cost projections show that reasonably priced, coated, molten silicon resistant refractory material shapes are obtainable.

  1. Electron spin resonance investigaton of semiconductor materials for application in thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Lihong

    2012-07-01

    In the present work, hydrogenated silicon and its alloys silicon carbide and silicon oxide have been investigated using electron spin resonance (ESR). The microstructure of these materials ranges from highly crystalline to amorphous. The correlation between the paramagnetic defects, microstructure, optical and electrical properties has been discussed. Correspondingly, these properties were characterized by the spin density (N{sub S}), g-value and the lineshape of ESR spectra, Infrared (I{sup IR}{sub C}) and/or Raman crystallinity (I{sup RS}{sub C}) as well as optical absorption and electrical dark conductivity ({sigma}{sub D}). 1. As the light absorber, Si layers essentially should have low defect density and good stability against light exposure. The spin density (N{sub S}) measured by ESR is often used as a measure for the paramagnetic defect density (N{sub D}) in the material. However, ESR sample preparation procedures can potentially cause discrepancy between N{sub S} and N{sub D}. Using Mo-foil, Al-foil and ZnO:Al-covered glass as sacrificial substrates, {mu}c-Si:H and a-Si:H films were deposited by plasma-enhanced chemical vapor deposition (PECVD), and ESR powder samples have been prepared with corresponding procedures. Possible preparation-related metastability and instability effects have been investigated in terms of substrate dependence, HCl-etching and atmosphere exposure. A sequence of 'preparation - annealing - air-exposure - annealing' has been designed to investigate the metastability and instability effects. N{sub S} after post-preparation air exposure is higher than in the annealed states, especially for the highly crystalline {mu}c-Si:H material the discrepancy reached one order of magnitude. Low temperature ESR measurements at 40 K indicated that atmospheric exposure leads to a redistribution of the defect states which in turn influence the evaluated N{sub S}. In annealed conditions the samples tend to have lower N{sub S} presumably due

  2. Efficient Flame Detection and Early Warning Sensors on Combustible Materials Using Hierarchical Graphene Oxide/Silicone Coatings.

    Science.gov (United States)

    Wu, Qian; Gong, Li-Xiu; Li, Yang; Cao, Cheng-Fei; Tang, Long-Cheng; Wu, Lianbin; Zhao, Li; Zhang, Guo-Dong; Li, Shi-Neng; Gao, Jiefeng; Li, Yongjin; Mai, Yiu-Wing

    2018-01-23

    Design and development of smart sensors for rapid flame detection in postcombustion and early fire warning in precombustion situations are critically needed to improve the fire safety of combustible materials in many applications. Herein, we describe the fabrication of hierarchical coatings created by assembling a multilayered graphene oxide (GO)/silicone structure onto different combustible substrate materials. The resulting coatings exhibit distinct temperature-responsive electrical resistance change as efficient early warning sensors for detecting abnormal high environmental temperature, thus enabling fire prevention below the ignition temperature of combustible materials. After encountering a flame attack, we demonstrate extremely rapid flame detection response in 2-3 s and excellent flame self-extinguishing retardancy for the multilayered GO/silicone structure that can be synergistically transformed to a multiscale graphene/nanosilica protection layer. The hierarchical coatings developed are promising for fire prevention and protection applications in various critical fire risk and related perilous circumstances.

  3. Regulation of naturally occurring and accelerator-produced radioactive materials. A Task Force review

    International Nuclear Information System (INIS)

    Nussbaumer, D.A.; Lubenau, J.O.; Cool, W.S.; Cunningham, L.J.; Mapes, J.R.; Schwartz, S.A.; Smith, D.A.

    1977-06-01

    The use of accelerator-produced radioisotopes (NARM), particularly in medicine, is growing rapidly. One NARM radioisotope, 226 Ra, is one of the most hazardous of radioactive materials, and 226 Ra is used by about 1 / 5 of all radioactive material users. Also, there are about 85,000 medical treatments using 226 Ra each year. All of the 25 Agreement States and 5 non-Agreement States have licensing programs covering NARM users. The Agreement States' programs for regulating NARM are comparable to their programs for regulating byproduct, source, and special nuclear materials under agreements with NRC. But there are 7 states who exercise no regulatory control over NARM users, and the remaining States have control programs which are variable in scope. There are no national, uniformly applied programs to regulate the design, fabrication and quality of sources and devices containing NARM or consumer products containing NARM which are distributed in interstate commerce. Naturally occurring radioactive material (except source material) associated with the nuclear fuel cycle is only partially subject to NRC regulation, i.e., when it is associated with source or special nuclear material being used under an active NRC license. The Task Force recommends that the NRC seek legislative authority to regulate naturally occurring and accelerator-produced radioactive materials for the reason that these materials present significant radiation exposure potential and present controls are fragmentary and non-uniform at both the State and Federal level

  4. Elastic silicone encapsulation of n-hexadecyl bromide by microfluidic approach as novel microencapsulated phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Zhenjin [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010 (China); Su, Lin; Li, Jing; Yang, Ruizhuang; Zhang, Zhanwen; Liu, Meifang; Li, Jie [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Li, Bo, E-mail: LB6711@126.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China)

    2014-08-20

    Highlights: • n-Hexadecyl bromide was encapsuled in elastic silicone shell. • The surfaces of microcapsules were smooth and the cross sections were compact. • Latent heat of microcapsules was 76.35 J g{sup −1}. • The microencapsulation ratio was 49 wt.%. • The microcapsules had good thermal stability. - Abstract: The elastic silicone/n-hexadecyl bromide microcapsules were prepared as novel microencapsulated phase change materials by microfluidic approach with the co-flowing channels, where the double oil1-in-oil2-in-water (O1/O2/W) droplets with a core–shell geometry were fabricated. The thermal characterizations of the microcapsules were investigated using differential scanning calorimetry (DSC) and thermogravimetry analysis (TGA). The DSC results showed that the microcapsules had good energy storage capacity with melting and freezing enthalpies 76.35 J g{sup −1} and 78.67 J g{sup −1}, respectively. The TGA investigation showed that the microcapsules had good thermal stability. The surfaces of microcapsules were smooth and the cross sections were compact from the results of optical microscope and scanning electron microscopy (SEM). Optical microscope showed that the silicone shell can provide expansion place due to its elastic property. Therefore, the silicone/n-hexadecyl bromide microcapsules showed good potential as thermal regulating textile and thermal insulation materials.

  5. Elastic silicone encapsulation of n-hexadecyl bromide by microfluidic approach as novel microencapsulated phase change materials

    International Nuclear Information System (INIS)

    Fu, Zhenjin; Su, Lin; Li, Jing; Yang, Ruizhuang; Zhang, Zhanwen; Liu, Meifang; Li, Jie; Li, Bo

    2014-01-01

    Highlights: • n-Hexadecyl bromide was encapsuled in elastic silicone shell. • The surfaces of microcapsules were smooth and the cross sections were compact. • Latent heat of microcapsules was 76.35 J g −1 . • The microencapsulation ratio was 49 wt.%. • The microcapsules had good thermal stability. - Abstract: The elastic silicone/n-hexadecyl bromide microcapsules were prepared as novel microencapsulated phase change materials by microfluidic approach with the co-flowing channels, where the double oil1-in-oil2-in-water (O1/O2/W) droplets with a core–shell geometry were fabricated. The thermal characterizations of the microcapsules were investigated using differential scanning calorimetry (DSC) and thermogravimetry analysis (TGA). The DSC results showed that the microcapsules had good energy storage capacity with melting and freezing enthalpies 76.35 J g −1 and 78.67 J g −1 , respectively. The TGA investigation showed that the microcapsules had good thermal stability. The surfaces of microcapsules were smooth and the cross sections were compact from the results of optical microscope and scanning electron microscopy (SEM). Optical microscope showed that the silicone shell can provide expansion place due to its elastic property. Therefore, the silicone/n-hexadecyl bromide microcapsules showed good potential as thermal regulating textile and thermal insulation materials

  6. Electrochemical characteristics of bundle-type silicon nanorods as an anode material for lithium ion batteries

    International Nuclear Information System (INIS)

    Nguyen, Si Hieu; Lim, Jong Choo; Lee, Joong Kee

    2012-01-01

    Highlights: ► A metal-assisted chemical etching technique was performed on Si thin films. ► The etching process resulted in the formation of bundle-type Si nanorods. ► The morphology of Si electrodes closely relate to electrochemical characteristics. - Abstract: In order to prepare bundle-type silicon nanorods, a silver-assisted chemical etching technique was used to modify a 1.6 μm silicon thin film, which was deposited on Cu foil by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition. The bundle-type silicon nanorods on Cu foil were employed as anodes for a lithium secondary battery, without further treatment. The electrochemical characteristics of the pristine silicon thin film anodes and the bundle-type silicon nanorod anodes are different from one another. The electrochemical performance of the bundle-type silicon nanorod anodes exceeded that of the pristine Si thin film anodes. The specific capacity of the bundle-type silicon nanorod anodes is much higher than 3000 mAh g −1 at the first charge (Li insertion) cycle. The coulombic efficiency of bundle-type silicon anodes was stable at more than 97%, and the charge capacity remained at 1420 mAh g −1 , even after 100 cycles of charging and discharging. The results from the differential voltage analysis showed a side reaction at around 0.44–0.5 V, and the specific potential of this side reaction decreased after each cycle. The apparent diffusion coefficients of the two anode types were in the range of 10 −13 –10 −16 cm 2 s −1 in the first cycle. In subsequent charge cycles, these values for the silicon thin film anodes and the silicon nanorod bundle anode were approximately 10 −12 –10 −14 and 10 −13 –10 −15 cm 2 s −1 , respectively.

  7. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    Science.gov (United States)

    Wananuruksawong, R.; Jinawath, S.; Padipatvuthikul, P.; Wasanapiarnpong, T.

    2011-10-01

    Silicon nitride (Si3N4) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si3N4 ceramic as a dental core material. The white Si3N4 was prepared by pressureless sintering at relative low sintering temperature of 1650 °C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si3N4 ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si3N4 specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder (tube furnace between 1000-1200°C. The veneered specimens fired at 1100°C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98×10-6 °C-1, rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  8. Oxidation behaviour of silicon-free tungsten alloys for use as the first wall material

    Science.gov (United States)

    Koch, F.; Brinkmann, J.; Lindig, S.; Mishra, T. P.; Linsmeier, Ch

    2011-12-01

    The use of self-passivating tungsten alloys as armour material of the first wall of a fusion power reactor may be advantageous concerning safety issues. In earlier studies good performance of the system W-Cr-Si was demonstrated. Thin films of such alloys showed a strongly reduced oxidation rate compared to pure tungsten. However, the formation of brittle tungsten silicides may be disadvantageous for the powder metallurgical production of bulk W-Cr-Si alloys if a good workability is needed. This paper shows the results of screening tests to identify suitable silicon-free alloys with distinguished self-passivation and a potentially good workability. Of all the tested systems W-Cr-Ti alloys showed the most promising results. The oxidation rate was even lower than the one of W-Cr-Si alloys, the reduction factor was about four orders of magnitude compared to pure tungsten. This performance could be conserved even if the content of alloying elements was reduced.

  9. Oxidation behaviour of silicon-free tungsten alloys for use as the first wall material

    International Nuclear Information System (INIS)

    Koch, F; Brinkmann, J; Lindig, S; Mishra, T P; Linsmeier, Ch

    2011-01-01

    The use of self-passivating tungsten alloys as armour material of the first wall of a fusion power reactor may be advantageous concerning safety issues. In earlier studies good performance of the system W-Cr-Si was demonstrated. Thin films of such alloys showed a strongly reduced oxidation rate compared to pure tungsten. However, the formation of brittle tungsten silicides may be disadvantageous for the powder metallurgical production of bulk W-Cr-Si alloys if a good workability is needed. This paper shows the results of screening tests to identify suitable silicon-free alloys with distinguished self-passivation and a potentially good workability. Of all the tested systems W-Cr-Ti alloys showed the most promising results. The oxidation rate was even lower than the one of W-Cr-Si alloys, the reduction factor was about four orders of magnitude compared to pure tungsten. This performance could be conserved even if the content of alloying elements was reduced.

  10. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    International Nuclear Information System (INIS)

    Wananuruksawong, R; Jinawath, S; Wasanapiarnpong, T; Padipatvuthikul, P

    2011-01-01

    Silicon nitride (Si 3 N 4 ) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si 3 N 4 ceramic as a dental core material. The white Si 3 N 4 was prepared by pressureless sintering at relative low sintering temperature of 1650 deg. C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si 3 N 4 ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si 3 N 4 specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder ( 2 O 3 - partial stabilized zirconia) and 30 wt% of polyvinyl alcohol (5 wt% solution). After coating the veneer on the Si 3 N 4 specimens, the firing was performed in electric tube furnace between 1000-1200 deg. C. The veneered specimens fired at 1100 deg. C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98x10 -6 deg. C -1 , rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  11. 14th Workshop on Crystalline Silicon Solar Cells& Modules: Materials and Processes; Extended Abstracts and Papers

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2004-08-01

    The 14th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. It will offer an excellent opportunity for researchers in private industry and at universities to prioritize mutual needs for future collaborative research. The workshop is intended to address the fundamental properties of PV silicon, new solar cell designs, advanced solar cell processing techniques, and cell-related module issues. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions will review recent advances in crystal growth, new cell designs, new processes and process characterization techniques, cell fabrication approaches suitable for future manufacturing demands, and solar cell encapsulation. This year's theme, ''Crystalline Si Solar Cells: Leapfrogging the Barriers,'' reflects the continued success of crystalline Si PV in overcoming technological barriers to improve solar cell performance and lower the cost of Si PV. The workshop will consist of presentations by invited speakers, followed by discussion sessions. In addition, there will be two poster sessions presenting the latest research and development results. Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV. The sessions will include: Advances in crystal growth and material issues; Impurities and defects; Dynamics during device processing; Passivation; High-efficiency Si solar cells; Advanced processing; Thin Si solar cells; and Solar cell reliability and module issues.

  12. Array Automated Assembly Task Low Cost Silicon Solar Array Project. Phase 2. Annual technical report, September 20, 1977-December 31, 1978

    Energy Technology Data Exchange (ETDEWEB)

    Rhee, Sang S.; Jones, Gregory T.; Allison, Kimberly L.

    1978-01-01

    This program was conducted to develop and demonstrate those solar cells and module process steps which have the technological readiness or capability to achieve the 1986 LSA goals. Results are reported. Seventeen process groups were investigated. Very promising results were achieved. A laserscribe computer program was developed. It demonstrated that silicon solar cells could be trimmed and holed by laser without causing mechanical defects (i.e., microcracks) nor any major degradation in solar cell electrical performance. The silicon wafer surface preparation task demonstrated a low-cost, high throughput texturizing process readily adaptable to automation. Performance verification tests of a laser scanning system showed a limited capability to detect hidden cracks or defects in solar cells. A general review of currently available thick film printing equipment provided the indication that state-of-the-art technology can adequately transform the capability of current printing machines to the elevated rate of 7200 wafers per hour. The LFE System 8000 silicon nitride plasma deposition system with the inclusion of minor equipment modifications was shown to be consistent with the 1986 LSA pricing goals. The performance verification test of the silicon nitride A.R. coating process provided the result that texturized, A.R. coated solar cells display a 14.1% improvement in electrical performance over identical solar cells without an A.R. coating. A new electroless nickel plating system was installed and demonstrated a low-cost, high throughput process readily adaptable to automation. A multiple wafer dipping method was investigated and operational parameters defined. A flux removal method consisting of a three stage D.I. water cascade rinse system with ultrasonic agitator was found to be very promising. Also, a SAMICS cost analysis was performed. (WHK)

  13. Device and material characterization and analytic modeling of amorphous silicon thin film transistors

    Science.gov (United States)

    Slade, Holly Claudia

    Hydrogenated amorphous silicon thin film transistors (TFTs) are now well-established as switching elements for a variety of applications in the lucrative electronics market, such as active matrix liquid crystal displays, two-dimensional imagers, and position-sensitive radiation detectors. These applications necessitate the development of accurate characterization and simulation tools. The main goal of this work is the development of a semi- empirical, analytical model for the DC and AC operation of an amorphous silicon TFT for use in a manufacturing facility to improve yield and maintain process control. The model is physically-based, in order that the parameters scale with gate length and can be easily related back to the material and device properties. To accomplish this, extensive experimental data and 2D simulations are used to observe and quantify non- crystalline effects in the TFTs. In particular, due to the disorder in the amorphous network, localized energy states exist throughout the band gap and affect all regimes of TFT operation. These localized states trap most of the free charge, causing a gate-bias-dependent field effect mobility above threshold, a power-law dependence of the current on gate bias below threshold, very low leakage currents, and severe frequency dispersion of the TFT gate capacitance. Additional investigations of TFT instabilities reveal the importance of changes in the density of states and/or back channel conduction due to bias and thermal stress. In the above threshold regime, the model is similar to the crystalline MOSFET model, considering the drift component of free charge. This approach uses the field effect mobility to take into account the trap states and must utilize the correct definition of threshold voltage. In the below threshold regime, the density of deep states is taken into account. The leakage current is modeled empirically, and the parameters are temperature dependent to 150oC. The capacitance of the TFT can be

  14. Corrosion Processes of the CANDU Steam Generator Materials in the Presence of Silicon Compounds

    International Nuclear Information System (INIS)

    Lucan, Dumitra; Fulger, Manuela; Velciu, Lucian; Lucan, Georgiana; Jinescu, Gheorghita

    2006-01-01

    The feedwater that enters the steam generators (SG) under normal operating conditions is extremely pure but, however, it contains low levels (generally in the μg/l concentration range) of impurities such as iron, chloride, sulphate, silicate, etc. When water is converted into steam and exits the steam generator, the non-volatile impurities are left behind. As a result of their concentration, the bulk steam generator water is considerably higher than the one in the feedwater. Nevertheless, the concentrations of corrosive impurities are in general sufficiently low so that the bulk water is not significantly aggressive towards steam generator materials. The impurities and corrosion products existing in the steam generator concentrate in the porous deposits on the steam generator tubesheet. The chemical reactions that take place between the components of concentrated solutions generate an aggressive environment. The presence of this environment and of the tubesheet crevices lead to localized corrosion and thus the same tubes cannot ensure the heat transfer between the fluids of the primary and secondary circuits. Thus, it becomes necessary the understanding of the corrosion process that develops into SG secondary side. The purpose of this paper is the assessment of corrosion behavior of the tubes materials (Incoloy-800) at the normal secondary circuit parameters (temperature = 2600 deg C, pressure = 5.1 MPa). The testing environment was demineralized water containing silicon compounds, at a pH=9.5 regulated with morpholine and cyclohexyl-amine (all volatile treatment - AVT). The paper presents the results of metallographic examinations as well as the results of electrochemical measurements. (authors)

  15. Hydrogenated amorphous silicon radiation detectors: Material parameters; radiation hardness; charge collection

    International Nuclear Information System (INIS)

    Qureshi, S.

    1991-01-01

    Properties of hydrogenated amorphous silicon p-i-n diodes relevant to radiation detection applications were studied. The interest in using this material for radiation detection applications in physics and medicine was motivated by its high radiation hardness and the fact that it can be deposited over large area at relatively low cost. Thick, fully depleted a-Si:H diodes are required for sufficient energy deposition by a charged particle and better signal to noise ratio. A sizeable electric field is essential for charge collection in a -Si:H diodes. The large density of ionized defects that exist in the i layer when the diode is under DC bias causes the electric field to be uniform. Material parameters, namely carrier mobility and lifetime and the ionized defect density in thick a-Si:H p-i-n diodes were studied by the transient photoconductivity method. The increase in diode leakage current with reverse bias over the operating bias was consistent with the Poole-Frenkel effect, involving excitation of carriers from neutral defects. The diode noise over the operating voltage range was completely explained in terms of the shot noise component for CR-(RC) 4 (pseudo-Gaussian) shaping at 3 μs shaping time and the noise component at 0 V bias (delta and thermal noise) added in quadrature. Irradiation with 1 Mev neutrons produced no significant degradation in leakage current and noise at fluences exceeding 4 x 10 14 cm -2 . Irradiation with 1.4 Mev proton fluence of 1 x 10 14 cm -2 decreased carrier lifetime by a factor of ∼4. Degradation in leakage current and noise became significant at proton fluence of ∼10 13 cm -2

  16. Carbon nanotube-coated silicone as a flexible and electrically conductive biomedical material

    International Nuclear Information System (INIS)

    Matsuoka, Makoto; Akasaka, Tsukasa; Totsuka, Yasunori; Watari, Fumio

    2012-01-01

    Artificial cell scaffolds that support cell adhesion, growth, and organization need to be fabricated for various purposes. Recently, there have been increasing reports of cell patterning using electrical fields. We fabricated scaffolds consisting of silicone sheets coated with single-walled (SW) or multi-walled (MW) carbon nanotubes (CNTs) and evaluated their electrical properties and biocompatibility. We also performed cell alignment with dielectrophoresis using CNT-coated sheets as electrodes. Silicone coated with 10 μg/cm 2 SWCNTs exhibited the least sheet resistance (0.8 kΩ/sq); its conductivity was maintained even after 100 stretching cycles. CNT coating also improved cell adhesion and proliferation. When an electric field was applied to the cell suspension introduced on the CNT-coated scaffold, the cells became aligned in a pearl-chain pattern. These results indicate that CNT coating not only provides electro-conductivity but also promotes cell adhesion to the silicone scaffold; cells seeded on the scaffold can be organized using electricity. These findings demonstrate that CNT-coated silicone can be useful as a biocompatible scaffold. - Highlights: ► We fabricated a CNT-coated silicone which has conductivity and biocompatibility. ► The conductivity was maintained after 100 cycles of stretching. ► CNT coatings enabled C2C12 cells adhere to the silicone surface. ► Cells were aligned with dielectrophoresis between CNT-coated silicone surfaces.

  17. Seminar Cum Meeting Report: Codata Task Group for Exchangeable Material Data Representation to Support Research and Education

    Directory of Open Access Journals (Sweden)

    T Ashino

    2008-11-01

    Full Text Available On March 4-5, 2008, the CODATA Task Group for Exchangeable Material Data Representation to Support Research and Education held a two day seminar cum meeting at the National Physical Laboratory (NPL, New Delhi, India, with NPL materials researchers and task group members representing material activities and databases from seven countries: European Union (The Czech Republic, France, and the Netherlands, India, Korea, Japan, and the United States. The NPL seminar included presentations about the researchers' work. The Task Group meeting included presentations about current data related activities of the members. Joint discussions between NPL researchers and CODATA task group members began an exchange of viewpoints among materials data producers, users, and databases developers. The seminar cum meeting included plans to continue and expand Task Group activities at the 2008 CODATA 21st Meeting in Kyiv, Ukraine.

  18. Report for fiscal 1998 on results of research and development of silicon-based polymeric material. Material research for the liquid methane fueled aircraft engine; 1998 nendo keisokei kobunshi zairyo no kenkyu kaihatsu seika hokokusho. Methane nenryo kokukiyo engine kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    Research was conducted for the purpose of establishing basic technology concerning molecular design, synthesis, material formation, and evaluation of silicon-based polymers which are expected to provide superior electronic/optical functions, high heat/combustion resistance and dynamic properties. The research subjects were such as following: research and development of silicon-based polymeric materials with sea-island microstructures; research and development of silicon-based polymeric materials with sea-island microstructures; research and development on IPN formation with silicon-based polymers; research and development of hybrid silicon polymers with organometallic compounds; research and development of silicon containing polymer materials with ring structures; general committee for investigation and research; the optimized low-temperature Wurtz synthesis and modification of polysilanes; study of unsaturated and hypercoordinate organosilicon compounds; basic studies on the synthesis and properties of silicon-based high polymers; studies of new monomer-synthesis and their polymerization reaction; studies on new method of preparation and functionalization of polysilanes; novel applications of silicon-based polymers in imaging devices for information display, memory, and recordings; and molecular design of silicon-containing {pi}-conjugated and {sigma}-conjugated compounds. (NEDO)

  19. Hyperpolarized Porous Silicon Nanoparticles: Potential Theragnostic Material for ²⁹Si Magnetic Resonance Imaging.

    Science.gov (United States)

    Seo, Hyeonglim; Choi, Ikjang; Whiting, Nicholas; Hu, Jingzhe; Luu, Quy Son; Pudakalakatti, Shivanand; McCowan, Caitlin; Kim, Yaewon; Zacharias, Niki; Lee, Seunghyun; Bhattacharya, Pratip; Lee, Youngbok

    2018-05-20

    Porous silicon nanoparticles have recently garnered attention as potentially-promising biomedical platforms for drug delivery and medical diagnostics. Here, we demonstrate porous silicon nanoparticles as contrast agents for ²⁹Si magnetic resonance imaging. Size-controlled porous silicon nanoparticles were synthesized by magnesiothermic reduction of silica nanoparticles and were surface activated for further functionalization. Particles were hyperpolarized via dynamic nuclear polarization to enhance their ²⁹Si MR signals; the particles demonstrated long ²⁹Si spin-lattice relaxation (T₁) times (~ 25 mins), which suggests potential applicability for medical imaging. Furthermore, ²⁹Si hyperpolarization levels were sufficient to allow ²⁹Si MRI in phantoms. These results underscore the potential of porous silicon nanoparticles that, when combined with hyperpolarized magnetic resonance imaging, can be a powerful theragnostic deep tissue imaging platform to interrogate various biomolecular processes in vivo. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Economic assessment of possible electron accelerator applications in curing silicon rubber based electric installation material

    International Nuclear Information System (INIS)

    Rmot, L.

    1976-01-01

    A description is given of the conventional technology of production of conductors with silicon rubber insulation and of the radiation vulcanization method, i.e., the radiation cross-linking of silicon rubber. An economic comparison is shown for both technologies. The analysis shows that the indices for the radiation cross-linking technology are favourable and that the introduction thereof would be advantageous. (J.P.)

  1. Determination of silicon in plant materials by laser-induced breakdown spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Souza, Paulino Florêncio de [Centro de Energia Nuclear na Agricultura, Universidade de São Paulo, Av. Centenário 303, 13416-000, Piracicaba, SP (Brazil); Centro de Tecnologia Canavieira, PO Box 162, 13400-970 Piracicaba, SP (Brazil); Santos, Dário [Departamento de Ciências Exatas e da Terra, Universidade Federal de São Paulo, Rua Prof. Artur Riedel, 275, 09972-270, Diadema, SP (Brazil); Gustinelli Arantes de Carvalho, Gabriel; Nunes, Lidiane Cristina [Centro de Energia Nuclear na Agricultura, Universidade de São Paulo, Av. Centenário 303, 13416-000, Piracicaba, SP (Brazil); Silva Gomes, Marcos da [Centro de Energia Nuclear na Agricultura, Universidade de São Paulo, Av. Centenário 303, 13416-000, Piracicaba, SP (Brazil); Departamento de Química, Universidade Federal de São Carlos, 13565-905 São Carlos, SP (Brazil); Guerra, Marcelo Braga Bueno [Centro de Energia Nuclear na Agricultura, Universidade de São Paulo, Av. Centenário 303, 13416-000, Piracicaba, SP (Brazil); Krug, Francisco José, E-mail: fjkrug@cena.usp.br [Centro de Energia Nuclear na Agricultura, Universidade de São Paulo, Av. Centenário 303, 13416-000, Piracicaba, SP (Brazil)

    2013-05-01

    In spite of the importance of Si for improving the productivity of many important crops, such as those from the Poaceae family (e.g. sugar cane, maize, wheat, rice), its quantitative determination in plants is seldom carried out and restricted to few laboratories in the world. There is a survey of methods in the literature, but most of them are either laborious or difficult to validate in view of the low availability of reference materials with a certified Si mass fraction. The aim of this study is to propose a method for the direct determination of Si in pellets of plant materials by laser-induced breakdown spectroscopy (LIBS). The experimental setup was designed by using a Q-switched Nd:YAG laser at 1064 nm (5 ns, 10 Hz) and the emission signals were collected by lenses into an optical fiber coupled to an Echelle spectrometer equipped with an intensified charge-coupled device. Experiments were carried out with leaves from 24 sugar cane varieties, with mass fractions varying from ca. 2 to 10 g kg{sup −1} Si. Pellets prepared from cryogenically ground leaves were used as test samples for both method development and validation of the calibration model. Best results were obtained when the test samples were interrogated with laser fluence of 50 J cm{sup −2} (750 μm spot size) and measurements carried out at Si I 212.412 nm emission line. The results obtained by LIBS were compared with those from inductively coupled plasma optical emission spectrometry after oven-induced alkaline digestion, and no significant differences were observed after applying the Student's t-test at 95% confidence level. The trueness of the proposed LIBS method was also confirmed from the analysis of CRM GBW 07603 (Bush branches and leaves). - Highlights: • This is the first application of LIBS for determination of Si in plant materials. • Data indicate that the method is appropriate for Si diagnosis in routine analysis. • Silicon can be simultaneously determined with macro- and

  2. Determination of silicon in plant materials by laser-induced breakdown spectroscopy

    International Nuclear Information System (INIS)

    Souza, Paulino Florêncio de; Santos, Dário; Gustinelli Arantes de Carvalho, Gabriel; Nunes, Lidiane Cristina; Silva Gomes, Marcos da; Guerra, Marcelo Braga Bueno; Krug, Francisco José

    2013-01-01

    In spite of the importance of Si for improving the productivity of many important crops, such as those from the Poaceae family (e.g. sugar cane, maize, wheat, rice), its quantitative determination in plants is seldom carried out and restricted to few laboratories in the world. There is a survey of methods in the literature, but most of them are either laborious or difficult to validate in view of the low availability of reference materials with a certified Si mass fraction. The aim of this study is to propose a method for the direct determination of Si in pellets of plant materials by laser-induced breakdown spectroscopy (LIBS). The experimental setup was designed by using a Q-switched Nd:YAG laser at 1064 nm (5 ns, 10 Hz) and the emission signals were collected by lenses into an optical fiber coupled to an Echelle spectrometer equipped with an intensified charge-coupled device. Experiments were carried out with leaves from 24 sugar cane varieties, with mass fractions varying from ca. 2 to 10 g kg −1 Si. Pellets prepared from cryogenically ground leaves were used as test samples for both method development and validation of the calibration model. Best results were obtained when the test samples were interrogated with laser fluence of 50 J cm −2 (750 μm spot size) and measurements carried out at Si I 212.412 nm emission line. The results obtained by LIBS were compared with those from inductively coupled plasma optical emission spectrometry after oven-induced alkaline digestion, and no significant differences were observed after applying the Student's t-test at 95% confidence level. The trueness of the proposed LIBS method was also confirmed from the analysis of CRM GBW 07603 (Bush branches and leaves). - Highlights: • This is the first application of LIBS for determination of Si in plant materials. • Data indicate that the method is appropriate for Si diagnosis in routine analysis. • Silicon can be simultaneously determined with macro- and micronutrients

  3. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    Energy Technology Data Exchange (ETDEWEB)

    Wananuruksawong, R; Jinawath, S; Wasanapiarnpong, T [Research Unit of Advanced Ceramic, Department of Materials Science, Faculty of Science, Chulalongkorn University, Bangkok (Thailand); Padipatvuthikul, P, E-mail: raayaa_chula@hotmail.com [Faculty of Dentistry, Srinakharinwirot University, Bangkok (Thailand)

    2011-10-29

    Silicon nitride (Si{sub 3}N{sub 4}) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si{sub 3}N{sub 4} ceramic as a dental core material. The white Si{sub 3}N{sub 4} was prepared by pressureless sintering at relative low sintering temperature of 1650 deg. C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si{sub 3}N{sub 4} ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si{sub 3}N{sub 4} specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder (<150 micrometer, Pyrex) with 5 wt% of zirconia powder (3 wt% Y{sub 2}O{sub 3} - partial stabilized zirconia) and 30 wt% of polyvinyl alcohol (5 wt% solution). After coating the veneer on the Si{sub 3}N{sub 4} specimens, the firing was performed in electric tube furnace between 1000-1200 deg. C. The veneered specimens fired at 1100 deg. C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98x10{sup -6} deg. C{sup -1}, rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  4. Silicon anode materials with ultra-low resistivity from the inside out for lithium ion batteries

    Science.gov (United States)

    Xu, Guojun; Jin, Chenxin; Liu, Liekai; Lan, Yu; Yue, Zhihao; Li, Xiaomin; Sun, Fugen; Huang, Haibin; Zhou, Lang

    2017-12-01

    Broken silicon (Si) wafers with electrical resistivity of 1 and 0.001 Ω cm were respectively ball-milled to Si particles with median diameters of less than 1 μm. Both these two types of Si particles were deposited with silver (Ag) nanoparticles by self-selective electroless deposition method. 1-Ω cm-Si particles, 0.001-Ω cm-Si particles, Ag-deposited 1-Ω cm-Si particles and Ag-deposited 0.001-Ω cm-Si particles were, respectively, mixed with graphite particles in weight ratio of 1:9 to form four types of Si-C anode materials and then they were assembled into coin cells. The experimental results indicate that the Ag-deposited 0.001-Ω cm-Si sample shows the higher capacity, better rate and cycle performance than other three samples, due to the high conductivity of Ag-deposited 0.001-Ω cm-Si sample from the inside out. At the current density of 750 mA g-1, the discharge capacity gap of Ag-deposited 0.001-Ω cm-Si sample and 0.001-Ω cm-Si sample is as high as 141.7 mA h g-1, which is almost equal to the discharge capacity of the latter. Besides, the discharge capacity retention ratio of Ag-deposited 0.001-Ω cm-Si sample after 50 cycles is 70%, which is 23.5% higher than that of 0.001-Ω cm-Si sample.

  5. Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants.

    Science.gov (United States)

    Gryshkov, Oleksandr; Klyui, Nickolai I; Temchenko, Volodymyr P; Kyselov, Vitalii S; Chatterjee, Anamika; Belyaev, Alexander E; Lauterboeck, Lothar; Iarmolenko, Dmytro; Glasmacher, Birgit

    2016-11-01

    Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO2) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO2 using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO2 to the initial HA powder resulted in significant decomposition of the final HA/ZrO2 coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO2 coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. Copyright © 2016 Elsevier B.V. All rights reserved.

  6. Biomechanical differences between expert and novice workers in a manual material handling task.

    Science.gov (United States)

    Plamondon, Andre; Denis, Denys; Delisle, Alain; Lariviere, Christian; Salazar, Erik

    2010-10-01

    The objective was to verify whether the methods were safer and more efficient when used by expert handlers than by novice handlers. Altogether, 15 expert and 15 novice handlers were recruited. Their task was to transfer four boxes from a conveyor to a hand trolley. Different characteristics of the load and lifting heights were modified to achieve a larger variety of methods by the participants. The results show that the net moments at the L5/S1 joint were not significantly different (p > 0.05) for the two groups. However, compared with the novices, the experts bent their lumbar region less (experts 54° (SD 11°); novices 66° (SD 15°)) but bent their knees more (experts approx. 72° (SD approx. 30°); novices approx. 53° (SD approx. 33°), which brought them closer to the box. The handler's posture therefore seems to be a major aspect that should be paid specific attention, mainly when there is maximum back loading. STATEMENT OF RELEVANCE: The findings of this research will be useful for improving manual material handling training programmes. Most biomechanical research is based on novice workers and adding information about the approach used by expert handlers in performing their tasks will help provide new avenues for reducing the risk of injury caused by this demanding physical task.

  7. Performance-based training: from job and task analysis to training materials

    International Nuclear Information System (INIS)

    Davis, L.T.; Spinney, R.W.

    1983-01-01

    Historically, the smoke filled room approach has been used to revise training programs: instructors would sit down and design a program based on existing training materials and any federal requirements that applied. This failure to reflect a systematic definition of required job functions, responsibilities and performance standards in training programs has resulted in generic program deficiencies: they do not provide complete training of required skills and knowledge. Recognition of this need for change, coupled with a decrease in experienced industry personnel inputs and long training pipelines, has heightened the need for efficient performance-based training programs which are derived from and referenced to job performance criteria. This paper presents the process for developing performance-based training materials based on job and task analysis products

  8. Final Report, Materials for Industrial Heat Recovery Systems, Tasks 3 and 4 Materials for Heat Recovery in Recovery Boilers

    Energy Technology Data Exchange (ETDEWEB)

    Keiser, James R.; Kish, Joseph R.; Singh, Preet M.; Sarma, Gorti B.; Yuan, Jerry; Gorog, J. Peter; Frederick, Laurie A.; Jette, Francois R.; Meisner, Roberta A.; Singbeil, Douglas L.

    2007-12-31

    The DOE-funded project on materials for industrial heat recovery systems included four research tasks: materials for aluminum melting furnace recuperator tubes, materials and operational changes to prevent cracking and corrosion of the co-extruded tubes that form primary air ports in black liquor recovery boilers, the cause of and means to prevent corrosion of carbon steel tubes in the mid-furnace area of recovery boilers, and materials and operational changes to prevent corrosion and cracking of recovery boiler superheater tubes. Results from studies on the latter two topics are given in this report while separate reports on results for the first two tasks have already been published. Accelerated, localized corrosion has been observed in the mid-furnace area of kraft recovery boilers. This corrosion of the carbon steel waterwall tubes is typically observed in the vicinity of the upper level of air ports where the stainless clad co-extruded wall tubes used in the lower portion of the boiler are welded to the carbon steel tubes that extend from this transition point or “cut line” to the top of the boiler. Corrosion patterns generally vary from one boiler to another depending on boiler design and operating parameters, but the corrosion is almost always found within a few meters of the cut line and often much closer than that. This localized corrosion results in tube wall thinning that can reach the level where the integrity of the tube is at risk. Collection and analysis of gas samples from various areas near the waterwall surface showed reducing and sulfidizing gases were present in the areas where corrosion was accelerated. However, collection of samples from the same areas at intervals over a two year period showed the gaseous environment in the mid-furnace section can cycle between oxidizing and reducing conditions. These fluctuations are thought to be due to gas flow instabilities and they result in an unstable or a less protective scale on the carbon steel

  9. The Impact of Differentiated Instructional Materials on English Language Learner (ELL) Students' Comprehension of Science Laboratory Tasks

    Science.gov (United States)

    Manavathu, Marian; Zhou, George

    2012-01-01

    Through a qualitative research design, this article investigates the impacts of differentiated laboratory instructional materials on English language learners' (ELLs) laboratory task comprehension. The factors affecting ELLs' science learning experiences are further explored. Data analysis reveals a greater degree of laboratory task comprehension…

  10. LOGICAL-ORIENTED TASKS AS A FORM OF ORGANIZATION OF THE EDUCATIONAL MATERIAL CONTENT IN TEACHING MATHEMATICS TO STUDENTS

    Directory of Open Access Journals (Sweden)

    Oksana Smirnova

    2015-09-01

    Full Text Available The article substantiates the need to improve the logical preparation of students. The authors regard the logical-oriented tasks as a form of organization of the content of educational material in teaching Mathematics and discriminate the types of tasks aimed at the formation of logical methods and operations.

  11. Fiscal 2000 achievement report. Development of energy use rationalization-oriented silicon manufacturing process (Survey and study of analysis of commercialization of solar-grade silicon material manufacturing technology); 2000 nendo shin energy sangyo gijutsu sogo kaihatsu kiko kyodo kenkyu gyomu seika hokokusho. Energy shiyo gorika silicon seizo process kaihatsu (Taiyodenchiyou silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The trend of technology development, problems harbored therein, trend of the market, and the like were investigated for supporting the development of technologies for the mass production and commercialization of solar-grade silicon materials. Concerning the future of production enhancement and cost reduction in the manufacture of polycrystalline silicon solar cells, studies were made from the technological viewpoint. The results are shown below. It is estimated that approximately 4,500 tons of material silicon will be necessary in 2005 and 6,500-10,700 tons in 2010. Since the melting purification method of NEDO (New Energy and Industrial Technology Development Organization) now under development step by step toward commercialization as well as the conventional source will provide the necessary amount of material silicon, it is inferred that the development of solar cells will go on without any restraint originating in the semiconductor industry. With the commercialization of the technologies so far developed and the development/commercialization of the fast-acting high-performance solar cell technology, probabilities are high that the polycrystalline silicon solar cell manufacturing cost in 2010 will be as low as to be on the 100 yen/W (93-118 yen/W) level which is the level now held up as the goal. (NEDO)

  12. Athermal silicon optical add-drop multiplexers based on thermo-optic coefficient tuning of sol-gel material.

    Science.gov (United States)

    Namnabat, Soha; Kim, Kyung-Jo; Jones, Adam; Himmelhuber, Roland; DeRose, Christopher T; Trotter, Douglas C; Starbuck, Andrew L; Pomerene, Andrew; Lentine, Anthony L; Norwood, Robert A

    2017-09-04

    Silicon photonics has gained interest for its potential to provide higher efficiency, bandwidth and reduced power consumption compared to electrical interconnects in datacenters and high performance computing environments. However, it is well known that silicon photonic devices suffer from temperature fluctuations due to silicon's high thermo-optic coefficient and therefore, temperature control in many applications is required. Here we present an athermal optical add-drop multiplexer fabricated from ring resonators. We used a sol-gel inorganic-organic hybrid material as an alternative to previously used materials such as polymers and titanium dioxide. In this work we studied the thermal curing parameters of the sol-gel and their effect on thermal wavelength shift of the rings. With this method, we were able to demonstrate a thermal shift down to -6.8 pm/°C for transverse electric (TE) polarization in ring resonators with waveguide widths of 325 nm when the sol-gel was cured at 130°C for 10.5 hours. We also achieved thermal shifts below 1 pm/°C for transverse magnetic (TM) polarization in the C band under different curing conditions. Curing time compared to curing temperature shows to be the most important factor to control sol-gel's thermo-optic value in order to obtain an athermal device in a wide temperature range.

  13. NDE methods for determining the materials properties of silicon carbide plates

    Science.gov (United States)

    Kenderian, Shant; Kim, Yong; Johnson, Eric; Palusinski, Iwona A.

    2009-08-01

    Two types of SiC plates, differing in their manufacturing processes, were interrogated using a variety of NDE techniques. The task of evaluating the materials properties of these plates was a challenge due to their non-uniform thickness. Ultrasound was used to estimate the Young's Modulus and calculate the thickness profile and Poisson's Ratio of the plates. The Young's Modulus profile plots were consistent with the thickness profile plots, indicating that the technique was highly influenced by the non-uniform thickness of the plates. The Poisson's Ratio is calculated from the longitudinal and shear wave velocities. Because the thickness is cancelled out, the result is dependent only on the time of flight of the two wave modes, which can be measured accurately. X-Ray was used to determine if any density variations were present in the plates. None were detected suggesting that the varying time of flight of the acoustic wave is attributed only to variations in the elastic constants and thickness profiles of the plates. Eddy Current was used to plot the conductivity profile. Surprisingly, the conductivity profile of one type of plates varied over a wide range rarely seen in other materials. The other type revealed a uniform conductivity profile.

  14. Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

    Science.gov (United States)

    1981-01-01

    Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

  15. Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants

    Energy Technology Data Exchange (ETDEWEB)

    Gryshkov, Oleksandr, E-mail: gryshkov@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany); Klyui, Nickolai I., E-mail: klyuini@ukr.net [College of Physics, Jilin University, 130012 Changchun (China); V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Temchenko, Volodymyr P., E-mail: tvp@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Kyselov, Vitalii S., E-mail: kyselov@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Chatterjee, Anamika, E-mail: chatterjee@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany); Belyaev, Alexander E., E-mail: belyaev@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Lauterboeck, Lothar, E-mail: lauterboeck@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany); Iarmolenko, Dmytro, E-mail: iarmolenko.dmytro@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Glasmacher, Birgit, E-mail: glasmacher@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany)

    2016-11-01

    Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO{sub 2}) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO{sub 2} using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO{sub 2} to the initial HA powder resulted in significant decomposition of the final HA/ZrO{sub 2} coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO{sub 2} coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. - Highlights: • Synthesis and characterization of porous biomorphic SiC ceramics derived from wood • Successful deposition of bioactive calcium phosphate coatings using gas detonation deposition • Porosity and pore size of Si

  16. Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants

    International Nuclear Information System (INIS)

    Gryshkov, Oleksandr; Klyui, Nickolai I.; Temchenko, Volodymyr P.; Kyselov, Vitalii S.; Chatterjee, Anamika; Belyaev, Alexander E.; Lauterboeck, Lothar; Iarmolenko, Dmytro; Glasmacher, Birgit

    2016-01-01

    Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO 2 ) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO 2 using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO 2 to the initial HA powder resulted in significant decomposition of the final HA/ZrO 2 coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO 2 coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. - Highlights: • Synthesis and characterization of porous biomorphic SiC ceramics derived from wood • Successful deposition of bioactive calcium phosphate coatings using gas detonation deposition • Porosity and pore size of SiC ceramics depend on wood

  17. Achievement report for fiscal 1999 on the development of silicon manufacturing process rationalizing energy utilization. Research and study on analysis to put silicon raw material manufacturing technology for solar cells into practical use; 1999 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    In order to support the development and practical application of a mass production technology for manufacturing silicon raw materials for solar cells, research and study were performed on trends of developing the related technologies, and movements in markets and industries. This paper reports the achievements thereof in fiscal 1999. Markets for solar cells are growing favorably, and the worldwide solar cell production in 1999 was 200 MWp, of which 80% or more is occupied by crystalline silicon solar cell. While development of the manufacturing technology for SOG-Si mass-production is in the stage of operation research of pilot plants, it has been verified that problems of impurity contamination was resolved, and high-purity silicon can be manufactured. In developing the silicon scrap utilization technology and a technology to integrate silicon refinement with casting, a conversion efficiency of 14% or higher was acquired in prototype sample substrates. It has been verified that a variety of raw materials can be dealt with by using the above technology, which has a possibility of cost reduction. In developing a substrate manufacturing technology, a great progress has been made in enhancing the productivity and reducing the cost by developing the continuous casting in the electromagnetic casting and the automation technology. (NEDO)

  18. Operational Readiness Review Plan for the Radioisotope Thermoelectric Generator Materials Production Tasks

    Science.gov (United States)

    Cooper, R. H.; Martin, M. M.; Riggs, C. R.; Beatty, R. L.; Ohriner, E. K.; Escher, R. N.

    1990-04-19

    In October 1989, a US shuttle lifted off from Cape Kennedy carrying the spacecraft Galileo on its mission to Jupiter. In November 1990, a second spacecraft, Ulysses, will be launched from Cape Kennedy with a mission to study the polar regions of the sun. The prime source of power for both spacecraft is a series of radioisotope thermoelectric generators (RTGs), which use plutonium oxide (plutonia) as a heat source. Several of the key components in this power system are required to ensure the safety of both the public and the environment and were manufactured at Oak Ridge National Laboratory (ORNL) in the 1980 to 1983 period. For these two missions, Martin Marietta Energy Systems, Inc. (Energy Systems), will provide an iridium alloy component used to contain the plutonia heat source and a carbon composite material that serves as a thermal insulator. ORNL alone will continue to fabricate the carbon composite material. Because of the importance to DOE that Energy Systems deliver these high quality components on time, performance of an Operational Readiness Review (ORR) of these manufacturing activities is necessary. Energy Systems Policy GP 24 entitled "Operational Readiness Process" describes the formal and comprehensive process by which appropriate Energy Systems activities are to be reviewed to ensure their readiness. This Energy System policy is aimed at reducing the risks associated with mission success and requires a management approved "readiness plan" to be issued. This document is the readiness plan for the RTG materials production tasks.

  19. Low-temperature radiation damage in silicon - 1: Annealing studies on N-type material

    International Nuclear Information System (INIS)

    Awadelkarim, O.O.

    1986-07-01

    The presence of electrically active defects in electron-irradiated P-doped n-type silicon was monitored using capacitance and loss factor measurements. Irradiations were performed at temperatures c - 0.14) eV and (E c - 0.24) eV in the gap are ascribed to the carbon interstitial and the divacancy, respectively. (author)

  20. Silicone-based composite materials simulate breast tissue to be used as ultrasonography training phantoms.

    Science.gov (United States)

    Ustbas, Burcin; Kilic, Deniz; Bozkurt, Ayhan; Aribal, Mustafa Erkin; Akbulut, Ozge

    2018-03-02

    A silicone-based composite breast phantom is fabricated to be used as an education model in ultrasonography training. A matrix of silicone formulations is tracked to mimic the ultrasonography and tactile response of human breast tissue. The performance of two different additives: (i) silicone oil and (ii) vinyl-terminated poly (dimethylsiloxane) (PDMS) are monitored by a home-made acoustic setup. Through the use of 75 wt% vinyl-terminated PDMS in two-component silicone elastomer mixture, a sound velocity of 1.29 ± 0.09 × 10 3  m/s and an attenuation coefficient of 12.99 ± 0.08 dB/cm-values those match closely to the human breast tissue-are measured with 5 MHz probe. This model can also be used for needle biopsy as well as for self-exam trainings. Herein, we highlight the fabrication of a realistic, durable, accessible, and cost-effective training platform that contains skin layer, inner breast tissue, and tumor masses. Copyright © 2018. Published by Elsevier B.V.

  1. Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

    NARCIS (Netherlands)

    Tan, H.

    2015-01-01

    Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of

  2. Silicon doped InP as an alternative plasmonic material for mid-infrared

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn

    2016-01-01

    Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...

  3. Synthesis and Characterization of Silicon Nanoparticles Inserted into Graphene Sheets as High Performance Anode Material for Lithium Ion Batteries

    Directory of Open Access Journals (Sweden)

    Yong Chen

    2014-01-01

    Full Text Available Silicon nanoparticles have been successfully inserted into graphene sheets via a novel method combining freeze-drying and thermal reduction. The structure, electrochemical performance, and cycling stability of this anode material were characterized by SEM, X-ray diffraction (XRD, charge/discharge cycling, and cyclic voltammetry (CV. CV showed that the Si/graphene nanocomposite exhibits remarkably enhanced cycling performance and rate performance compared with bare Si nanoparticles for lithium ion batteries. XRD and SEM showed that silicon nanoparticles inserted into graphene sheets were homogeneous and had better layered structure than the bare silicon nanoparticles. Graphene sheets improved high rate discharge capacity and long cycle-life performance. The initial capacity of the Si nanoparticles/graphene keeps above 850 mAhg−1 after 100 cycles at a rate of 100 mAg−1. The excellent cycle performances are caused by the good structure of the composites, which ensured uniform electronic conducting sheet and intensified the cohesion force of binder and collector, respectively.

  4. Preparation and characterization of flake graphite/silicon/carbon spherical composite as anode materials for lithium-ion batteries

    International Nuclear Information System (INIS)

    Lai Jun; Guo Huajun; Wang Zhixing; Li Xinhai; Zhang Xiaoping; Wu Feixiang; Yue Peng

    2012-01-01

    Highlights: ► Flake graphite/silicon/carbon composite is synthesized via spray drying. ► Flake graphite of ∼0.5 μm and glucose are used to prepare the composite. ► The as-prepared composite shows spherical and porous appearance. ► The composite shows nearly the same cycleability as commercial graphite in 20 cycles. ► The composite shows a reversible capacity of 552 mAh/g at the 20th cycle. - Abstract: Using nano-Si, glucose and flake graphite of ∼0.5 μm as raw materials, flake graphite/silicon/carbon composite is successfully synthesized via spray drying and subsequent pyrolysis. The samples are characterized by XRD, SEM, TEM and electrochemical measurements. The composite is composed of flake graphite, nano-Si and amorphous glucose-pyrolyzed carbon and presents good spherical appearance. Some micron pores arising from the decomposition of glucose exist on the surface of the composite particles. The composite has a high reversible capacity of 602.7 mAh/g with an initial coulombic efficiency of 69.71%, and shows nearly the same cycleability as the commercial graphite in 20 cycles. Both the glucose-pyrolyzed carbon and the micron pores play important roles in improving the cycleability of the composite. The flake graphite/silicon/carbon composite electrode is a potential alternative to graphite for high energy-density lithium ion batteries.

  5. PREFACE: E-MRS 2012 Spring Meeting, Symposium M: More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics

    Science.gov (United States)

    Wenger, Christian; Fompeyrine, Jean; Vallée, Christophe; Locquet, Jean-Pierre

    2012-12-01

    More than Moore explores a new area of Silicon based microelectronics, which reaches beyond the boundaries of conventional semiconductor applications. Creating new functionality to semiconductor circuits, More than Moore focuses on motivating new technological possibilities. In the past decades, the main stream of microelectronics progresses was mainly powered by Moore's law, with two focused development arenas, namely, IC miniaturization down to nano scale, and SoC based system integration. While the microelectronics community continues to invent new solutions around the world to keep Moore's law alive, there is increasing momentum for the development of 'More than Moore' technologies which are based on silicon technologies but do not simply scale with Moore's law. Typical examples are RF, Power/HV, Passives, Sensor/Actuator/MEMS or Bio-chips. The More than Moore strategy is driven by the increasing social needs for high level heterogeneous system integration including non-digital functions, the necessity to speed up innovative product creation and to broaden the product portfolio of wafer fabs, and the limiting cost and time factors of advanced SoC development. It is believed that More than Moore will add value to society on top of and beyond advanced CMOS with fast increasing marketing potentials. Important key challenges for the realization of the 'More than Moore' strategy are: perspective materials for future THz devices materials systems for embedded sensors and actuators perspective materials for epitaxial approaches material systems for embedded innovative memory technologies development of new materials with customized characteristics The Hot topics covered by the symposium M (More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics) at E-MRS 2012 Spring Meeting, 14-18 May 2012 have been: development of functional ceramics thin films New dielectric materials for advanced microelectronics bio- and CMOS compatible

  6. Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

    KAUST Repository

    Bahabry, Rabab R.

    2017-11-30

    The solar cells market has an annual growth of more than 30 percent over the past 15 years. At the same time, the cost of the solar modules diminished to meet both of the rapid global demand and the technological improvements. In particular for the crystalline silicon solar cells, the workhorse of this technology. The objective of this doctoral thesis is enhancing the efficiency of c-Si solar cells while exploring the cost reduction via innovative techniques. Contact metallization and ultra-flexible wafer based c-Si solar cells are the main areas under investigation. First, Silicon-based solar cells typically utilize screen printed Silver (Ag) metal contacts which affect the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used for the front contact grid lines. In this work, investigation of the microstructure and the electrical characteristics of nickel monosilicide (NiSi) ohmic contacts on the rear side of c-Si solar cells has been carried out. Significant enhancement in the fill factor leading to increasing the total power conversion efficiency is observed. Second, advanced classes of modern application require a new generation of versatile solar cells showcasing extreme mechanical resilience. However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption with less active Si material. Here, a complementary metal oxide semiconductor (CMOS) technology based integration strategy is designed where corrugation architecture to enable an ultra-flexible solar cell module from bulk mono-crystalline silicon solar wafer with 17% efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness and achieves flexibility via interdigitated back contacts. These cells

  7. IEA Bioenergy Task 42 - Countries report. IEA Bioenergy Task 42 on biorefineries: Co-production of fuels, chemicals, power and materials from biomass. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Cherubini, F.; Jungmeier, G.; Mandl, M. (Joanneum Research, Graz (Austria)) (and others)

    2010-07-01

    This report has been developed by the members of IEA Bioenergy Task 42 on Biorefinery: Co-production of Fuels, Chemicals, Power and Materials from Biomass (www.biorefinery.nl/ieabioenergy-task42). IEA Bioenergy is a collaborative network under the auspices of the International Energy Agency (IEA) to improve international cooperation and information exchange between national bioenergy RD and D programs. IEA Bioenergy Task 42 on Biorefinery covers a new and very broad biomass-related field, with a very large application potential, and deals with a variety of market sectors with many interested stakeholders, a large number of biomass conversion technologies, and integrated concepts of both biochemical and thermochemical processes. This report contains an overview of the biomass, bioenergy and biorefinery situation, and activities, in the Task 42 member countries: Austria, Canada, Denmark, France, Germany, Ireland, and the Netherlands. The overview includes: national bioenergy production, non-energetic biomass use, bioenergy related policy goals, national oil refineries, biofuels capacity for transport purposes, existing biorefinery industries, pilot and demo plants, and other activities of research and development (such as main national projects and stakeholders). Data are provided by National Task Leaders (NTLs), whose contact details are listed at the end of the report. (author)

  8. First-principles studies of a photovoltaic material based on silicon heavily codoped with sulfur and nitrogen

    Science.gov (United States)

    Dong, Xiao; Wang, Yongyong; Song, Xiaohui; Yang, Feng

    2018-03-01

    In silicon co-hyperdoped with nitrogen and sulfur, dopant atoms tend to form dimers in the near-equilibrium process. The dimer that contains substitutional N and S atoms has the lowest formation energy and can form an impurity band that overlaps with the conduction band (CB). When separating the two atoms far apart from each other, the impurity band is clearly isolated from the CB and becomes an intermediate band (IB). The sub-band-gap absorption decreases with the decrease in the substitutional atom distance. The sub-band-gap absorption of the material is the combined effect of the configurations with different N-S distances.

  9. Material synthesis for silicon integrated-circuit applications using ion implantation

    Science.gov (United States)

    Lu, Xiang

    As devices scale down into deep sub-microns, the investment cost and complexity to develop more sophisticated device technologies have increased substantially. There are some alternative potential technologies, such as silicon-on-insulator (SOI) and SiGe alloys, that can help sustain this staggering IC technology growth at a lower cost. Surface SiGe and SiGeC alloys with germanium peak composition up to 16 atomic percent are formed using high-dose ion implantation and subsequent solid phase epitaxial growth. RBS channeling spectra and cross-sectional TEM studies show that high quality SiGe and SiGeC crystals with 8 atomic percent germanium concentration are formed at the silicon surface. Extended defects are formed in SiGe and SiGeC with 16 atomic percent germanium concentration. X-ray diffraction experiments confirm that carbon reduces the lattice strain in SiGe alloys but without significant crystal quality improvement as detected by RBS channeling spectra and XTEM observations. Separation by plasma implantation of oxygen (SPIMOX) is an economical method for SOI wafer fabrication. This process employs plasma immersion ion implantation (PIII) for the implantation of oxygen ions. The implantation rate for Pm is considerably higher than that of conventional implantation. The feasibility of SPIMOX has been demonstrated with successful fabrication of SOI structures implementing this process. Secondary ion mass spectrometry (SIMS) analysis and cross-sectional transmission electron microscopy (XTEM) micrographs of the SPIMOX sample show continuous buried oxide under single crystal overlayer with sharp silicon/oxide interfaces. The operational phase space of implantation condition, oxygen dose and annealing requirement has been identified. Physical mechanisms of hydrogen induced silicon surface layer cleavage have been investigated using a combination of microscopy and hydrogen profiling techniques. The evolution of the silicon cleavage phenomenon is recorded by a series

  10. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    Energy Technology Data Exchange (ETDEWEB)

    Czapski, M., E-mail: michal.czapski@cern.ch [CERN, Genève 23 CH-1211 (Switzerland); Stora, T. [CERN, Genève 23 CH-1211 (Switzerland); Tardivat, C.; Deville, S. [Lab. de Synthèse et Fonctionnalisation des Céramiques, CNRS/Saint-Gobain, Av. Jauffret 84306 Cavaillon (France); Santos Augusto, R. [CERN, Genève 23 CH-1211 (Switzerland); Leloup, J.; Bouville, F. [Lab. de Synthèse et Fonctionnalisation des Céramiques, CNRS/Saint-Gobain, Av. Jauffret 84306 Cavaillon (France); Fernandes Luis, R. [Univ. Técnica de Lisboa Estrada Nacional 10, 2686-953 Sacavem, Loures (Portugal)

    2013-12-15

    Highlights: • SiC and Al{sub 2}O{sub 3} of uniaxial porosity were produced with ice-templating method. • The method allows controlled pore formation within the material. • Calculation of mechanical integrity under irradiation with protons was performed. • Generated thermal stresses should not exceed material’s strength. -- Abstract: New silicon carbide (SiC) and aluminum oxide (Al{sub 2}O{sub 3}) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

  11. Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

    Directory of Open Access Journals (Sweden)

    Konstantinos Pantzas

    2015-10-01

    Full Text Available Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si surfaces and nanostructured ones, using Silicon on Isolator (SOI or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

  12. Preparation and characterisation of mixed silicon oxycarbide materials; Preparacion y caracterizacion de materiales de oxicarburo de silicio mixtos

    Energy Technology Data Exchange (ETDEWEB)

    Tellez, L.; Tamayo, A.; Mazo, M. A.; Rubio, F.; Rubio, J.

    2010-07-01

    In this work different mixed Silicon oxicarbide materials have been prepared. Si, Si-Ti, Si-Zr and Si-Al oxicarbide materials have been obtained from pyrolisis at 1000 degree centigrade and 1300 degree centigrade of the respective preceramic materials. After pyrolisis X, D and T units of the oxycarbide structure have been observed in such materials. They show the presence of Si-C and Si-O bonds in a given material. The characterization has been carried out by means of FT-IR, Raman NMR {sup 2}9Si, NMR {sup 1}3C and XRD. The formation of Si-Ti, Si-Zr and Si-Al bonds has been estimated in accordance with the decrease of the Si-O-Si wave number observed in the FT-IR spectra. Si and Si-Ti oxycarbide materials do not lead to crystallisation after pyrolisis at highest temperatures, however for Si-Zr and Si-Al oxycarbide materials different crystalline phases have been observed. All pyrolised materials present free and carbidic carbon. After pyrolisis at 1300 degree centigrade the free carbon reacts with Si-O bonds to form SiC{sub 4} groups which must be assigned to nucleus of the {beta}-SiC crystals. (Author)

  13. Report for fiscal 1998 on results of research and development of silicon-based polymeric material; 1998 nendo keisokei kobunshi zairyo no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The research and development of 'silicon-based polymeric materials' has been implemented under ten year plan since 1991 by the research and development system for industrial science and technology, with the following subjects conducted in the general accounting section of fiscal 1998. In the research and development of the synthetic technology of electrically conductive silicon-based polymeric materials, a synthetic method was established for unsaturated side-chain group polysilanes as a basic structural unit for structuring multidimensions. In the research and development of the synthetic technology of new silicon-based polymeric materials capable of plotting circuits, network-shaped polysilanes with various amino groups introduced were synthesized, for which electrical conductivity and temperature dependency were measured. In the research and development of new silicon-based polymeric materials with an electro-luminous function and the like, polymeric synthesis began developing smoothly that has hole-transporting and electron transporting properties concerning the electro-luminous function. In the research and development of silicon-based photoelectric conversion materials, examination was made on the improvement of photoelectric conversion performance by materialization technology including lamination and mixture. The general investigation and research committee contrived further advancement of the research and development. (NEDO)

  14. The development of a model to predict the effects of worker and task factors on foot placements in manual material handling tasks.

    Science.gov (United States)

    Wagner, David W; Reed, Matthew P; Chaffin, Don B

    2010-11-01

    Accurate prediction of foot placements in relation to hand locations during manual materials handling tasks is critical for prospective biomechanical analysis. To address this need, the effects of lifting task conditions and anthropometric variables on foot placements were studied in a laboratory experiment. In total, 20 men and women performed two-handed object transfers that required them to walk to a shelf, lift an object from the shelf at waist height and carry the object to a variety of locations. Five different changes in the direction of progression following the object pickup were used, ranging from 45° to 180° relative to the approach direction. Object weights of 1.0 kg, 4.5 kg, 13.6 kg were used. Whole-body motions were recorded using a 3-D optical retro-reflective marker-based camera system. A new parametric system for describing foot placements, the Quantitative Transition Classification System, was developed to facilitate the parameterisation of foot placement data. Foot placements chosen by the subjects during the transfer tasks appeared to facilitate a change in the whole-body direction of progression, in addition to aiding in performing the lift. Further analysis revealed that five different stepping behaviours accounted for 71% of the stepping patterns observed. More specifically, the most frequently observed behaviour revealed that the orientation of the lead foot during the actual lifting task was primarily affected by the amount of turn angle required after the lift (R(2) = 0.53). One surprising result was that the object mass (scaled by participant body mass) was not found to significantly affect any of the individual step placement parameters. Regression models were developed to predict the most prevalent step placements and are included in this paper to facilitate more accurate human motion simulations and ergonomics analyses of manual material lifting tasks. STATEMENT OF RELEVANCE: This study proposes a method for parameterising the steps

  15. Materials for Advanced Ultrasupercritical Steam Turbines Task 4: Cast Superalloy Development

    Energy Technology Data Exchange (ETDEWEB)

    Thangirala, Mani

    2015-09-30

    The Steam Turbine critical stationary structural components are high integrity Large Shell and Valve Casing heavy section Castings, containing high temperature steam under high pressures. Hence to support the development of advanced materials technology for use in an AUSC steam turbine capable of operating with steam conditions of 760°C (1400°F) and 35 Mpa (5000 psia), Casting alloy selection and evaluation of mechanical, metallurgical properties and castability with robust manufacturing methods are mandated. Alloy down select from Phase 1 based on producability criteria and creep rupture properties tested by NETL-Albany and ORNL directed the consortium to investigate cast properties of Haynes 282 and Haynes 263. The goals of Task 4 in Phase 2 are to understand a broader range of mechanical properties, the impact of manufacturing variables on those properties. Scale up the size of heats to production levels to facilitate the understanding of the impact of heat and component weight, on metallurgical and mechanical behavior. GE Power & Water Materials and Processes Engineering for the Phase 2, Task 4.0 Castings work, systematically designed and executed casting material property evaluation, multiple test programs. Starting from 15 lbs. cylinder castings to world’s first 17,000 lbs. poured weight, heavy section large steam turbine partial valve Haynes 282 super alloy casting. This has demonstrated scalability of the material for steam Turbine applications. Activities under Task 4.0, Investigated and characterized various mechanical properties of Cast Haynes 282 and Cast Nimonic 263. The development stages involved were: 1) Small Cast Evaluation: 4 inch diam. Haynes 282 and Nimonic 263 Cylinders. This provided effects of liquidus super heat range and first baseline mechanical data on cast versions of conventional vacuum re-melted and forged Ni based super alloys. 2) Step block castings of 300 lbs. and 600 lbs. Haynes 282 from 2 foundry heats were evaluated which

  16. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2008-09-01

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

  17. 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.; Rand, J.; Saitoh, T.; Sinton, R.; Stavola, M.; Swanson, D.; Tan, T.; Weber, E.; Werner, J.; Al-Jassim, M.

    2003-08-01

    The 13th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. It will offer an excellent opportunity for researchers in private industry and at universities to prioritize mutual needs for future collaborative research. The workshop is intended to address the fundamental aspects of impurities and defects in silicon: their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. A combination of oral, poster, and discussion sessions will review recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands.

  18. Process Research On Polycrystalline Silicon Material (PROPSM). [flat plate solar array project

    Science.gov (United States)

    Culik, J. S.

    1983-01-01

    The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

  19. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2005-11-01

    The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

  20. Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing

    Science.gov (United States)

    De Biasio, M.; Kraft, M.; Schultz, M.; Goller, B.; Sternig, D.; Esteve, R.; Roesner, M.

    2017-05-01

    Silicon carbide (SiC) is a wide band-gap semi-conductor material that is used increasingly for high voltage power devices, since it has a higher breakdown field strength and better thermal conductivity than silicon. However, in particular its hardness makes wafer processing difficult and many standard semi-conductor processes have to be specially adapted. We measure the effects of (i) mechanical processing (i.e. grinding of the backside) and (ii) chemical and thermal processing (i.e. doping and annealing), using confocal microscopy to measure the surface roughness of ground wafers and micro-Raman spectroscopy to measure the stresses induced in the wafers by grinding. 4H-SiC wafers with different dopings were studied before and after annealing, using depth-resolved micro-Raman spectroscopy to observe how doping and annealing affect: i.) the damage and stresses induced on the crystalline structure of the samples and ii.) the concentration of free electrical carriers. Our results show that mechanical, chemical and thermal processing techniques have effects on this semiconductor material that can be observed and characterized using confocal microscopy and high resolution micro Raman spectroscopy.

  1. Achievement report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Investigation and research on analyzing practical application of a technology to manufacture solar cell silicon raw materials; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    This paper describes the achievement in fiscal 1997 of analyzing practical application of a technology to manufacture solar cell silicon raw materials. Silicon consumption for solar cells in fiscal 1997 has increased to 2000-ton level, and the supply has been very tight. For drastic improvement in the demand and supply situation, development of SOG-Si manufacturing technology and its early practical application are desired. The development of the NEDO mass-production technology using melting and refining has completed constructing the process facilities in fiscal 1998, and will enter the stage of operational research. However, insufficiency in the basic data about behavior of impurities is inhibiting the development. In the substrate manufacturing technology, discussions have shown progress on use of diversifying silicons outside the standard by using the electromagnetic casting process. For slicing and processing the substrates, development of a high-performance slicing equipment and automatic rough rinsing machine is under way. Properties required on silicon raw materials vary considerably widely because of difference in cell making systems and conditions, which is attributable to unknown impurity behavior. When 1GW production is assumed, the cell module manufacturing cost is calculated as 137 yen/W, for which low-cost mass production for its realization, slicing productivity enhancement, and cost reduction are required. The paper also describes site surveys in overseas countries. (NEDO)

  2. Modeling the mechanical and aging properties of silicone rubber and foam - stockpile-historical & additively manufactured materials

    Energy Technology Data Exchange (ETDEWEB)

    Maiti, A; Weisgraber, T H; Gee, R H

    2014-09-30

    M97* and M9763 belong to the M97xx series of cellular silicone materials that have been deployed as stress cushions in some of the LLNL systems. Their purpose of these support foams is to distribute the stress between adjacent components, maintain relative positioning of various components, and mitigate the effects of component size variation due to manufacturing and temperature changes. In service these materials are subjected to a continuous compressive strain over long periods of time. In order to ensure their effectiveness, it is important to understand how their mechanical properties change over time. The properties we are primarily concerned about are: compression set, load retention, and stress-strain response (modulus).

  3. Silicon Tracker Design for the ILC

    International Nuclear Information System (INIS)

    Nelson, T.; SLAC

    2005-01-01

    The task of tracking charged particles in energy frontier collider experiments has been largely taken over by solid-state detectors. While silicon microstrip trackers offer many advantages in this environment, large silicon trackers are generally much more massive than their gaseous counterparts. Because of the properties of the machine itself, much of the material that comprises a typical silicon microstrip tracker can be eliminated from a design for the ILC. This realization is the inspiration for a tracker design using lightweight, short, mass-producible modules to tile closed, nested cylinders with silicon microstrips. This design relies upon a few key technologies to provide excellent performance with low cost and complexity. The details of this concept are discussed, along with the performance and status of the design effort

  4. Material parameters in a thick hydrogenated amorphous silicon detector and their effect on signal collection

    International Nuclear Information System (INIS)

    Qureshi, S.; Perez-Mendez, V.; Kaplan, S.N.; Fujieda, I.; Cho, G.; Street, R.A.

    1989-04-01

    Transient photoconductivity and ESR measurements were done to relate the ionized dangling bond density of thick hydrogenated amorphous silicon (a-Si:H) detectors. We found that only a fraction (/approximately/30--35%) of the total defect density as measured by ESR is ionized when the detector is biased into deep depletion. The measurements on annealed samples also show that this fraction is about 0.3. An explanation based on the shift of the Fermi energy is given. The measurements show that the time dependence of relaxation is a stretched exponential. 8 refs., 4 figs., 1 tab

  5. Preparation and characterization of flake graphite/silicon/carbon spherical composite as anode materials for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Lai Jun [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Guo Huajun, E-mail: Lai_jun_@126.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Wang Zhixing; Li Xinhai; Zhang Xiaoping; Wu Feixiang; Yue Peng [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

    2012-07-25

    Highlights: Black-Right-Pointing-Pointer Flake graphite/silicon/carbon composite is synthesized via spray drying. Black-Right-Pointing-Pointer Flake graphite of {approx}0.5 {mu}m and glucose are used to prepare the composite. Black-Right-Pointing-Pointer The as-prepared composite shows spherical and porous appearance. Black-Right-Pointing-Pointer The composite shows nearly the same cycleability as commercial graphite in 20 cycles. Black-Right-Pointing-Pointer The composite shows a reversible capacity of 552 mAh/g at the 20th cycle. - Abstract: Using nano-Si, glucose and flake graphite of {approx}0.5 {mu}m as raw materials, flake graphite/silicon/carbon composite is successfully synthesized via spray drying and subsequent pyrolysis. The samples are characterized by XRD, SEM, TEM and electrochemical measurements. The composite is composed of flake graphite, nano-Si and amorphous glucose-pyrolyzed carbon and presents good spherical appearance. Some micron pores arising from the decomposition of glucose exist on the surface of the composite particles. The composite has a high reversible capacity of 602.7 mAh/g with an initial coulombic efficiency of 69.71%, and shows nearly the same cycleability as the commercial graphite in 20 cycles. Both the glucose-pyrolyzed carbon and the micron pores play important roles in improving the cycleability of the composite. The flake graphite/silicon/carbon composite electrode is a potential alternative to graphite for high energy-density lithium ion batteries.

  6. Materials preparation and fabrication of pyroelectric polymer/silicon MOSFET detector arrays. Final report

    International Nuclear Information System (INIS)

    Bloomfield, P.

    1992-01-01

    The authors have delivered several 64-element linear arrays of pyroelectric elements fully integrated on silicon wafers with MOS readout devices. They have delivered detailed drawings of the linear arrays to LANL. They have processed a series of two inch wafers per submitted design. Each two inch wafer contains two 64 element arrays. After spin-coating copolymer onto the arrays, vacuum depositing the top electrodes, and polarizing the copolymer films so as to make them pyroelectrically active, each wafer was split in half. The authors developed a thicker oxide coating separating the extended gate electrode (beneath the polymer detector) from the silicon. This should reduce its parasitic capacitance and hence improve the S/N. They provided LANL three processed 64 element sensor arrays. Each array was affixed to a connector panel and selected solder pads of the common ground, the common source voltage supply connections, the 64 individual drain connections, and the 64 drain connections (for direct pyroelectric sensing response rather than the MOSFET action) were wire bonded to the connector panel solder pads. This entails (64 + 64 + 1 + 1) = 130 possible bond connections per 64 element array. This report now details the processing steps and the progress of the individual wafers as they were carried through from beginning to end

  7. Division of Development and Technology Plasma/Materials Interaction and High Heat Flux Materials and Components Task Groups: Report on the joint meeting, July 9, 1986

    International Nuclear Information System (INIS)

    Watson, R.D.

    1986-09-01

    This paper contains a collection of viewgraphs from a joint meeting of the Division of Development and Technology Plasma/Materials Interaction and High Heat Flux Materials and Components Task Groups. A list of contributing topics is: PPPL update, ATF update, Los Alamos RFP program update, status of DIII-D, PMI graphite studies at ORNL, PMI studies for low atomic number materials, high heat flux materials issues, high heat flux testing program, particle confinement in tokamaks, helium self pumping, self-regenerating coatings technical planning activity and international collaboration update

  8. Joining elements of silicon carbide

    International Nuclear Information System (INIS)

    Olson, B.A.

    1979-01-01

    A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

  9. Characterization of Amorphous Silicon Advanced Materials and PV Devices: Final Technical Report, 15 December 2001--31 January 2005

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P. C.

    2005-11-01

    The major objectives of this subcontract have been: (1) understand the microscopic properties of the defects that contribute to the Staebler-Wronski effect to eliminate this effect, (2) perform correlated studies on films and devices made by novel techniques, especially those with promise to improve stability or deposition rates, (3) understand the structural, electronic, and optical properties of films of hydrogenated amorphous silicon (a-Si:H) made on the boundary between the amorphous and microcrystalline phases, (4) search for more stable intrinsic layers of a-Si:H, (5) characterize the important defects, impurities, and metastabilities in the bulk and at surfaces and interfaces in a-Si:H films and devices and in important alloy systems, and (6) make state-of-the-art plasma-enhanced chemical vapor deposition (PECVD) devices out of new, advanced materials, when appropriate. All of these goals are highly relevant to improving photovoltaic devices based on a-Si:H and related alloys. With regard to the first objective, we have identified a paired hydrogen site that may be the defect that stabilizes the silicon dangling bonds formed in the Staebler-Wronski effect.

  10. Development of an SU-8 MEMS process with two metal electrodes using amorphous silicon as a sacrificial material

    KAUST Repository

    Ramadan, Khaled S.

    2013-02-08

    This work presents an SU-8 surface micromachining process using amorphous silicon as a sacrificial material, which also incorporates two metal layers for electrical excitation. SU-8 is a photo-patternable polymer that is used as a structural layer for MEMS and microfluidic applications due to its mechanical properties, biocompatibility and low cost. Amorphous silicon is used as a sacrificial layer in MEMS applications because it can be deposited in large thicknesses, and can be released in a dry method using XeF2, which alleviates release-based stiction problems related to MEMS applications. In this work, an SU-8 MEMS process was developed using ;-Si as a sacrificial layer. Two conductive metal electrodes were integrated in this process to allow out-of-plane electrostatic actuation for applications like MEMS switches and variable capacitors. In order to facilitate more flexibility for MEMS designers, the process can fabricate dimples that can be conductive or nonconductive. Additionally, this SU-8 process can fabricate SU-8 MEMS structures of a single layer of two different thicknesses. Process parameters were optimized for two sets of thicknesses: thin (5-10 m) and thick (130 m). The process was tested fabricating MEMS switches, capacitors and thermal actuators. © 2013 IOP Publishing Ltd.

  11. Strengthening of oxidation resistant materials for gas turbine applications. [treatment of silicon ceramics for increased flexural strength and impact resistance

    Science.gov (United States)

    Kirchner, H. P.

    1974-01-01

    Silicon nitride and silicon carbide ceramics were treated to form compressive surface layers. On the silicon carbide, quenching and thermal exposure treatments were used, and on the silicon nitride, quenching, carburizing, and a combination of quenching and carburizing were used. In some cases substantial improvements in impact resistance and/or flexural strength were observed. The presence of compressive surface stresses was demonstrated by slotted rod tests.

  12. Development in fiscal 1998 of silicon manufacturing process to rationalize energy usage. Surveys and researches on analysis of practical application of technology to manufacture silicon raw materials for solar cells; 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    With an objective to develop a mass production technology to manufacture silicon raw materials for solar cells, and assist its practical application, surveys and analyses were performed on trends in development of the related technologies, the problems therein , market trends and industrial trends thereof. This paper summarizes the achievements in fiscal 1998. The worldwide production amount of solar cells in 1998 is estimated to have achieved 150 MW, and the silicon consumption reached the level of 2,300 tons. In spite of the economic recession environment, there was no change in the expansion trend. In developing an SOG-Si mass production and manufacturing technology, construction of pilot plants for each process has been completed, and entered into the operation research phase. In developing a technology to manufacture high quality poly-crystalline silicon substrates, fabrication has been completed on the on-line ingot cutting equipment and the plasma heating equipment, and the stage is now in operation research of continuous electromagnetic casting process. The conversion efficiency of the poly-crystalline silicon solar cells is 14 to 16% at the mass production level, whose enhancement requires indispensably the improvement in quality of the substrate. Discussions are required on the ingot manufacturing conditions in coordination with improvement in the cell manufacturing technology. (NEDO)

  13. Fast Formation of Conductive Material by Simultaneous Chemical Process for Infilling Through-Silicon Via

    Science.gov (United States)

    Kawakita, Jin; Chikyow, Toyohiro

    2012-06-01

    It is necessary to develop a fast and inexpensive fabrication process of vertical electric wiring by through-silicon via (TSV) technology for advanced three-dimensional semiconductor devices. In this research, a fast-forming conductive composite was successfully developed by simultaneous deposition of conductive organic polymer (polypyrrole) and metal (silver) from the liquid phase, accelerated by photoirradiation. The growth rate of the composite was 38 nm·s-1, which is more than 10 times higher than that of copper by conventional plating. The electric conductivity of the composite was 2.1×104 Ω-1·cm-1, which is on the same level as general metal conductors. In addition, the effects of reaction conditions on the growth rate and the conductivity of the composites were revealed. From these results, the infilling time of the TSV was expected to shorten from the present 2-10 h to 5-10 m.

  14. Structure and properties of nanocrystalline soft magnetic composite materials with silicon polymer matrix

    International Nuclear Information System (INIS)

    Dobrzanski, L.A.; Nowosielski, R.; Konieczny, J.; PrzybyI, A.; WysIocki, J.

    2005-01-01

    The paper concerns investigation of nanocrystalline composites technology preparation. The composites in the form of rings with rectangular transverse section, and with polymer matrix and nanocrystalline metallic powders fulfillment were made, for obtaining good ferromagnetic properties. The nanocrystalline ferromagnetic powders were manufactured by high-energy ball milling of metallic glasses strips in an as-quenched state. Generally for investigation, Co matrix alloys with the silicon polymer were used. Magnetic properties in the form of hysteresis loop by rings method were measured. Generally composite cores showed lower soft ferromagnetic properties than winded cores of nanocrystalline strips, but composite cores showed interesting mechanical properties. Furthermore, the structure of strips and powders on properties of composites were investigated

  15. Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

    International Nuclear Information System (INIS)

    Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Ritala, M.; Leskelae, M.

    2005-01-01

    Deep level transient spectroscopy, capacitance-voltage and conductance transient measurement techniques have been applied in order to evaluate the electrical quality of thin high-permittivity oxide layers on silicon. The oxides studied included HfO 2 film grown from two different oxygen-free metal precursors and Ta 2 O 5 and Nb 2 O 5 nanolaminates. The interface trap densities correlated to the oxide growth chemistry and semiconductor substrate treatment. No gap state densities induced by structural disorder were measured in the films grown on chemical SiO 2 . Trap densities were also clearly lower in HfO 2 films compared to Ta 2 O 5 -Nb 2 O 5

  16. Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-08-01

    The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

  17. Relationship of microstructure properties to oxygen impurities in nanocrystalline silicon photovoltaic materials

    Science.gov (United States)

    Xu, H.; Wen, C.; Liu, H.; Li, Z. P.; Shen, W. Z.

    2013-03-01

    We have fully investigated the correlation of microstructure properties and oxygen impurities in hydrogenated nanocrystalline silicon photovoltaic films. The achievement has been realized through a series of different hydrogen dilution ratio treatment by plasma enhanced chemical vapor deposition system. Raman scattering, x-ray diffraction, and ultraviolet-visible transmission techniques have been employed to characterize the physical structural characterization and to elucidate the structure evolution. The bonding configuration of the oxygen impurities was investigated by x-ray photoelectron spectroscopy and the Si-O stretching mode of infrared-transmission, indicating that the films were well oxidized in SiO2 form. Based on the consistence between the proposed structure factor and the oxygen content, we have demonstrated that there are two dominant disordered structure regions closely related to the post-oxidation contamination: plate-like configuration and clustered microvoids.

  18. Surface and interfacial chemistry of high-k dielectric and interconnect materials on silicon

    Science.gov (United States)

    Kirsch, Paul Daniel

    Surfaces and interfaces play a critical role in the manufacture and function of silicon based integrated circuits. It is therefore reasonable to study the chemistries at these surfaces and interfaces to improve existing processes and to develop new ones. Model barium strontium titanate high-k dielectric systems have been deposited on ultrathin silicon oxynitride in ultrahigh vacuum. The resulting nanostructures are characterized with secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). An interfacial reaction between Ba and Sr atoms and SiOxNy was found to create silicates, BaSixOy or SrSi xOy. Inclusion of N in the interfacial oxide decreased silicate formation in both Ba and Sr systems. Furthermore, inclusion of N in the interfacial oxide decreased the penetration of Ba and Sr containing species, such as silicides and silicates. Sputter deposited HfO2 was studied on nitrided and unnitrided Si(100) surfaces. XPS and SIMS were used to verify the presence of interfacial HfSixOy and estimate its relative amount on both nitrided and unnitrided samples. More HfSixOy formed without the SiNx interfacial layer. These interfacial chemistry results are then used to explain the electrical measurements obtained from metal oxide semiconductor (MOS) capacitors. MOS capacitors with interfacial SiNx exhibit reduced leakage current and increased capacitance. Lastly, surface science techniques were used to develop a processing technique for reducing thin films of copper (II) and copper (I) oxide to copper. Deuterium atoms (D*) and methyl radicals (CH3*) were shown to reduce Cu 2+ and/or Cu1+ to Cu0 within 30 min at a surface temperature of 400 K under a flux of 1 x 1015 atoms/cm2s. Temperature programmed desorption experiments suggest that oxygen leaves the surface as D2O and CO2 for the D* and CH3* treated surfaces, respectively.

  19. Results of 4 years R&D in the IEA Task4224 on compact thermal energy storage: Materials development for system integration

    NARCIS (Netherlands)

    Helden, W. van; Hauer, A.; Furbo, S.; Skrylynk, O.; Nuytten, T.; Ristic, A.; Henninger, S.; Rindt, C.; Bruno, F.; Lázaro, A.; Luo, L.; Basciotti, D.; Heinz, A.; Weber, R.; Fernandez, I.; Cabeza, L.; Chiu, J.; Zondag, H.; Cuypers, R.; Jänchen, J.; Zettl, B.; Lävemann, E.

    2013-01-01

    Since January 2009, experts from the fields of material development and system integration are working together in the joint Task42/Annex24 to develop better materials for the compact storage of heat and to design, build and test systems in which these novel materials are being applied. In the Task,

  20. Novel synthesis of covalently linked silicon quantum dot–polystyrene hybrid materials: Silicon quantum dot–polystyrene polymers of tunable refractive index

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jin-Kyu; Dung, Mai Xuan; Jeong, Hyun-Dam, E-mail: hdjeong@chonnam.ac.kr

    2014-11-14

    We present a new material design concept, silicon quantum dot (Si QD) polymers, for which surface-functionalized Si QDs can be regarded as a large monomer in the polymers. As a prototypical example, vinyl-functionalized Si QDs, i.e., divinylbenzene-capped Si QDs (DVB-Si QDs) synthesized by adopting divinylbenzene (DVB) capping molecule to the hydride-terminated Si QD (H-Si QD) via Pt-catalyzed hydrosilylation was introduced and polymerized with a styrene monomer to yield Si QD–polystyrene (Si QD–PS) polymers. To demonstrate controllability of the content of Si QDs in the polymers as in conventional polymers, three Si QD content varied Si QD–PS polymers were systematically prepared, named as Si QD–PS-A, Si QD–PS-B, and Si QD–PS-C. It has been demonstrated that the content of the Si QDs in the Si QD–PS polymers was well controlled by the amount of the DVB-Si QD used, as found to be 3.8 wt% (Si QD–PS-A), 10.0 wt% (Si QD–PS-B), 20.0 wt% (Si QD–PS-A), and 37.4 wt% (DVB-Si QD), which was deduced from TGA results. Thin films of the Si QD–PS polymers and the freestanding DVB-Si QDs were successfully fabricated by a spin-coating method and it was found that the refractive index of the thin films dried at 40 °C was linearly increased as the content of the Si QD in the polymers was increased from 1.586 (0 wt%), to 1.590 (3.8 wt%), to 1.592 (10.0 wt%), to 1.592 (20.0 wt%), and to 1.614 (37.4 wt%). - Highlights: • A new material design concept, Si QD polymer, is presented. • Freestanding vinyl-functionalized Si QD was synthesized as a monomer for polymer. • Si QD–PS polymers were synthesized by polymerization of styrene with vinyl-Si QD. • Concentration of Si QD in the polymer was well controlled by amount of Si QD used. • Refractive index of polymer thin films linearly increased with concentration of Si QD.

  1. Novel synthesis of covalently linked silicon quantum dot–polystyrene hybrid materials: Silicon quantum dot–polystyrene polymers of tunable refractive index

    International Nuclear Information System (INIS)

    Choi, Jin-Kyu; Dung, Mai Xuan; Jeong, Hyun-Dam

    2014-01-01

    We present a new material design concept, silicon quantum dot (Si QD) polymers, for which surface-functionalized Si QDs can be regarded as a large monomer in the polymers. As a prototypical example, vinyl-functionalized Si QDs, i.e., divinylbenzene-capped Si QDs (DVB-Si QDs) synthesized by adopting divinylbenzene (DVB) capping molecule to the hydride-terminated Si QD (H-Si QD) via Pt-catalyzed hydrosilylation was introduced and polymerized with a styrene monomer to yield Si QD–polystyrene (Si QD–PS) polymers. To demonstrate controllability of the content of Si QDs in the polymers as in conventional polymers, three Si QD content varied Si QD–PS polymers were systematically prepared, named as Si QD–PS-A, Si QD–PS-B, and Si QD–PS-C. It has been demonstrated that the content of the Si QDs in the Si QD–PS polymers was well controlled by the amount of the DVB-Si QD used, as found to be 3.8 wt% (Si QD–PS-A), 10.0 wt% (Si QD–PS-B), 20.0 wt% (Si QD–PS-A), and 37.4 wt% (DVB-Si QD), which was deduced from TGA results. Thin films of the Si QD–PS polymers and the freestanding DVB-Si QDs were successfully fabricated by a spin-coating method and it was found that the refractive index of the thin films dried at 40 °C was linearly increased as the content of the Si QD in the polymers was increased from 1.586 (0 wt%), to 1.590 (3.8 wt%), to 1.592 (10.0 wt%), to 1.592 (20.0 wt%), and to 1.614 (37.4 wt%). - Highlights: • A new material design concept, Si QD polymer, is presented. • Freestanding vinyl-functionalized Si QD was synthesized as a monomer for polymer. • Si QD–PS polymers were synthesized by polymerization of styrene with vinyl-Si QD. • Concentration of Si QD in the polymer was well controlled by amount of Si QD used. • Refractive index of polymer thin films linearly increased with concentration of Si QD

  2. Silicon as a virtual plasmonic material: Acquisition of its transient optical constants and the ultrafast surface plasmon-polariton excitation

    Energy Technology Data Exchange (ETDEWEB)

    Danilov, P. A.; Ionin, A. A.; Kudryashov, S. I., E-mail: sikudr@sci.lebedev.ru; Makarov, S. V.; Rudenko, A. A. [Lebedev Physical Institute (Russian Federation); Saltuganov, P. N. [Moscow Institute of Physics and Technology (State University) (Russian Federation); Seleznev, L. V.; Yurovskikh, V. I.; Zayarny, D. A. [Lebedev Physical Institute (Russian Federation); Apostolova, T. [Bulgarian Academy of Sciences, Institute for Nuclear Research and Nuclear Energetics (Bulgaria)

    2015-06-15

    Ultrafast intense photoexcitation of a silicon surface is complementarily studied experimentally and theoretically, with its prompt optical dielectric function obtained by means of time-resolved optical reflection microscopy and the underlying electron-hole plasma dynamics modeled numerically, using a quantum kinetic approach. The corresponding transient surface plasmon-polariton (SPP) dispersion curves of the photo-excited material were simulated as a function of the electron-hole plasma density, using the derived optical dielectric function model, and directly mapped at several laser photon energies, measuring spatial periods of the corresponding SPP-mediated surface relief nanogratings. The unusual spectral dynamics of the surface plasmon resonance, initially increasing with the increase in the electron-hole plasma density but damped at high interband absorption losses induced by the high-density electron-hole plasma through instantaneous bandgap renormalization, was envisioned through the multi-color mapping.

  3. 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2006-08-01

    The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

  4. FY 1991 Report on the results of the research and development of silicon-based high-molecular-weight materials; 1991 nendo keisokei kobunshi zairyo no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1992-03-01

    The research and development project has been started to establish the basic technologies for molecular designs, synthesis, material production and evaluation of silicon-based high-molecular-weight materials expected to exhibit excellent characteristics, e.g., electro-optical functions, resistance to heat, flame retardance and mechanical properties. The efforts in FY 1991, the first year for the 10-year project, are mainly directed to the surveys on the R and D trends, both domestic and foreign, to clarify the relationship between the structures and functions/properties. The R and D projects followed include the technologies for synthesizing (1) electroconductive silicon-based high-molecular-weight materials, (2) novel silicon-based high-molecular-weight materials capable of drawing circuits, (3) novel, light-emitting silicon-based high-molecular-weight materials and (4) silicon-based opto-electric conversion materials for the electro-optical functional high-molecular-weight materials; and (1) synthesis of high-molecular-weight structural materials of sea island structure, (2) technologies for forming inter-penetrating type structures (IPN), (3) development of composite structural materials of organometallic complex and silicon-based high-molecular-weight material, and (4) development of silicon-based high-molecular-weight materials of ring structure for the high-molecular-weight structural materials. (NEDO)

  5. Fiscal 1992 R and D project for next generation infrastructure technology. Report on results of R and D on silicon-based polymeric material; 1992 nendo keisokei kobunshi zairyo no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1993-03-01

    R and D was conducted with the purpose of establishing fundamental technologies for molecular design, synthesis, material formation and evaluation method concerning silicon-based polymer. with the fiscal 1992 results summarized. In the studies on synthesis technology of electrically conductive silicon-based polymeric materials, silicon-based compounds were synthesized including in particular -Si-Si- bond and carbon multiple bond like -C-C-, with acquisition/analysis of material data started. In the studies on new silicon-based polymeric materials capable of circuit plotting, syntheses were performed for network polysilanes through the disproportionation reaction of alkoxydisilanes. In the studies on new silicon-based polymeric materials having a light emitting function, evaluation of oxidation-reduction potential and search for synthesizing conditions were performed for halosilanes and hydrosilanes. In the studies on silicon-based photoelectric conversion materials, molecular design progressed using a crystal orbital method. Furthermore, researches were implemented on such subjects as silicon-based polymeric materials having a sea-island structure, interpenetrating polymer network forming technologies, and composite structural materials composed of organic metallic complex and silicon-based polymers. (NEDO)

  6. A molecular method to assess bioburden embedded within silicon-based resins used on modern spacecraft materials

    Science.gov (United States)

    Stam, Christina N.; Bruckner, James; Spry, J. Andy; Venkateswaran, Kasthuri; La Duc, Myron T.

    2012-07-01

    Current assessments of bioburden embedded in spacecraft materials are based on work performed in the Viking era (1970s), and the ability to culture organisms extracted from such materials. To circumvent the limitations of such approaches, DNA-based techniques were evaluated alongside established culturing techniques to determine the recovery and survival of bacterial spores encapsulated in spacecraft-qualified polymer materials. Varying concentrations of Bacillus pumilus SAFR-032 spores were completely embedded in silicone epoxy. An organic dimethylacetamide-based solvent was used to digest the epoxy and spore recovery was evaluated via gyrB-targeted qPCR, direct agar plating, most probably number analysis, and microscopy. Although full-strength solvent was shown to inhibit the germination and/or outgrowth of spores, dilution in excess of 100-fold allowed recovery with no significant decrease in cultivability. Similarly, qPCR (quantitative PCR) detection sensitivities as low as ~103 CFU ml-1 were achieved upon removal of inhibitory substances associated with the epoxy and/or solvent. These detection and enumeration methods show promise for use in assessing the embedded bioburden of spacecraft hardware.

  7. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  8. 太阳能硅料化学清洗研究进展%Development of chemical cleaning for solar energy silicon material

    Institute of Scientific and Technical Information of China (English)

    申燕; 贾艳飞; 姚旭; 张健; 廉佳林

    2016-01-01

    Silicon as the main material of solar photovoltaic power generation in the solar photovoltaic industry, the demand for silicon material cleanliness also gradualy increases under the background of the rapid development of the market. Chemical cleaning is the main method of silicon material cleaning. In this paper, the research progress of the standard cleaning method ( RCA ) and depending on the silicon material by RCA method to develop other chemical cleaning method was reviewed.%多晶硅作为太阳能光伏发电的主要材料,在太阳能光伏产业市场迅速发展的大背景下,对硅料清洁度的需求也逐步增加。化学清洗是目前硅料清洗的主要方法。本文综述了近年来硅料化学清洗的基本方法(RCA)及根据硅料的不同由RCA法发展出的其他化学清洗方法。

  9. A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors

    NARCIS (Netherlands)

    Groenland, A.W.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2011-01-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the

  10. Biosurfactants prevent in vitro Candida albicans biofilm formation on resins and silicon materials for prosthetic devices.

    Science.gov (United States)

    Cochis, Andrea; Fracchia, Letizia; Martinotti, Maria Giovanna; Rimondini, Lia

    2012-06-01

    The aim of this study was to evaluate in vitro the preventive antiadhesion activity of biosurfactants against Candida albicans biofilm. Disks of silicon and acrylic resin for denture prostheses were precoated with increasing concentrations of biosurfactants obtained from endophyte biofilms selected from Robinia pseudoacacia and from Nerium oleander, and afterward infected with C. albicans cells. The number of biofilm cells were detected by colony-forming unit (CFU) counting, cell viability was established by the 2,3-bis(2-methoxy-4-nitro-5-sulphophenyl)-5-[(phenyl amino)carbonyl]-2H-tetrazolium hydroxide (XTT) assay, and biosurfactant cytotoxicity was evaluated by the [3-(4,5-dimethyliazol-2-yl)-5-(3-carboxymethoxyphenyl)-2-(4-sulphophenyl)-2H-tetrazolium] (MTT) assay. Chlorhexidine was used as control. Precoating with biosurfactants caused a greater reduction (P biosurfactants was observed at low concentrations (78.12 μg/mL and 156.12 μg/mL) which were noncytotoxic. This study demonstrated the preventive antiadhesion activity of biosurfactants against C. albicans biofilm. These agents are amphiphilic, interfere with microbial adhesion, and demonstrate cycompatibility with epithelial cells and fibroblasts. Copyright © 2012 Elsevier Inc. All rights reserved.

  11. Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

    Energy Technology Data Exchange (ETDEWEB)

    Fiorentino, Giuseppe, E-mail: g.fiorentino@tudelft.nl; Morana, Bruno [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT Delft (Netherlands); Forte, Salvatore [Department of Electronic, University of Naples Federico II, Piazzale Tecchio, 80125 Napoli (Italy); Sarro, Pasqualina Maria [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT, Delft (Netherlands)

    2015-01-15

    In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

  12. Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science Investigation

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croll, A.

    2014-01-01

    A series of Ge Si crystal growth experiments are planned to be conducted in the Low 1-x x Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  13. Structural and magnetic properties of the nanocomposite materials based on a mesoporous silicon dioxide matrix

    Energy Technology Data Exchange (ETDEWEB)

    Grigor’eva, N. A., E-mail: natali@lns.pnpi.spb.ru [St. Petersburg State University (Russian Federation); Eckerlebe, H. [Helmholtz-Zentrum Geesthacht (Germany); Eliseev, A. A.; Lukashin, A. V.; Napol’skii, K. S. [Moscow State University (Russian Federation); Kraje, M. [Reactor Institute Delft (Netherlands); Grigor’ev, S. V. [St. Petersburg State University (Russian Federation)

    2017-03-15

    The structural and magnetic properties of the mesoporous systems based on silicon dioxide with a regular hexagonal arrangement of pores several microns in length and several nanometers in diameter, which are filled with iron compound nanofilaments in various chemical states, are studied in detail. The studies are performed using the following mutually complementary methods: transmission electron microscopy, SQUID magnetometry, electron spin resonance, Mössbauer spectroscopy, polarized neutron small-angle diffraction, and synchrotron radiation diffraction. It is shown that the iron nanoparticles in pores are mainly in the γ phase of Fe{sub 2}O{sub 3} with a small addition of the α phase and atomic iron clusters. The effective magnetic field acting on a nanofilament from other nanofilaments is 11 mT and has a dipole nature, the ferromagnetic–paramagnetic transition temperature is in the range 76–94 K depending on the annealing temperature of the samples, and the temperature that corresponds to the change in the magnetic state of the iron oxide nanofilaments is T ≈ 50–60 K at H = 0 and T ≈ 80 K at H = 300 mT. It is also shown that the magnetization reversal of an array of nanofilaments is caused by the magnetostatic interaction between nanofilaments at the fields that are lower than the saturation field.

  14. The effect of prolonged storage and disinfection on the dimensional stability of 5 vinyl polyether silicone impression materials.

    Science.gov (United States)

    Nassar, Usama; Flores-Mir, Carlos; Heo, Giseon; Torrealba, Ysidora

    2017-06-01

    Vinyl polyether silicone (VPES) has a different composition from other elastomeric impression materials as it combines vinyl polysiloxane (VPS) and polyether (PE). Therefore, it is important to study its properties and behavior under different test conditions. This study investigated the dimensional stability of 5 VPES consistencies when stored for up to 2 weeks, with and without using a standard disinfection procedure. 40 discs of each VPES consistency (total 200) were made using a stainless steel die and ring as described by ANSI /ADA specification No. 19. 20 discs of each material were immersed in a 2.5% buffered glutaraldehyde solution for 30 minutes. Dimensional stability measurements were calculated immediately after fabrication and repeated on the same discs after 7 and 14 days of storage. The data was analyzed using two-way ANOVA with a significance level set at α = 0.05. The discs mean contraction was below 0.5% at all test times ranging from 0.200 ± 0.014 to 0.325 ± 0.007. Repeated measures ANOVA showed a statistically significant difference after 2-week storage between the disinfected and non-disinfected groups ( P < .001). Although there was no statistically significant difference between the materials at the time of fabrication, the contraction of the materials increased with storage for 1 and 2 weeks. The dimensional changes of VPES impression discs after disinfection and prolonged storage complied with ANSI/ADA standard. The tested VPES impression materials were dimensionally stable for clinical use after disinfection for 30 minutes in glutaraldehyde and storage for up to 2 weeks.

  15. Rapid determination of main components by means of flame-atomic-absorption spectrometry for chromium, silicon and tungsten in CrSiW materials

    International Nuclear Information System (INIS)

    Mueller, E.; Stahlberg, R.

    1985-01-01

    The application of Flame-Atomic-Absorption Spectrometry (FAAS) for determining chromium, silicon and tungsten in CrSiW materials is described. The FAAS determinations of the main components are shown under optimum conditions. Sufficient precision and reliability have been achieved for routine analysis. The application of a mixture of acids for preparing CrSiW solutions is proposed. The preparation of samples is discussed in detail. Optimum conditions are recommended for determining chromium, silicon and tungsten using one solution only. (orig.) [de

  16. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  17. Influence of Containment on the Growth of Silicon-Germanium: A Materials Science Flight Project

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2012-01-01

    A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. The plans for the flight experiments will be described.

  18. Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science ISS Investigation

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croll, A.

    2014-01-01

    A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processinginduced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. The plans for the flight experiments will be described.

  19. Porous silicon: some new applications of this material with astonishing properties; Le silicium poreux: nouvelles applications de ce materiau aux proprietes remarquables

    Energy Technology Data Exchange (ETDEWEB)

    Gauthier-Manuel, B. [Laboratoire FEMTO-ST, Dept. MN2S, CNRS UMR 6174, 25 - Besancon (France)

    2009-02-15

    Anodic oxidation of silicon wafer in fluor-hydric acid solution leads to a porous material with surprising properties. Structures at nano-metric scale are source of deep photoluminescence. The very large scale of pore size available and the high specific surface obtained allows optical and microfabrication applications. This paper describes the electrochemical process of this material, some characterization methods, and some new applications in the fields of micro-energy and molecular separation. (author)

  20. Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

    CERN Document Server

    Ruzin, A; Glaser, M; Lemeilleur, F; Talamonti, R; Watts, S; Zanet, A

    1999-01-01

    Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used normalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors. (5 refs).

  1. Physical adsorption vs. chemical binding of undecylenic acid on porous silicon surface: a comparative study of differently functionalized materials

    Energy Technology Data Exchange (ETDEWEB)

    Salonen, J.; Lehto, V.P. [University of Turku (Finland). Department of Physics; Chirvony, V.; Matveeva, E. [Nanophotonics Technology Center, Technical University of Valencia (Spain); Pastor, E.

    2009-07-15

    To imply miscibility to porous silicon (PSi) used for biomedical purposes a number of functionalization methods are employed. In order to distinguish between a non-specific surfactant-like interaction (physical sorption) and chemical binding of unsaturated chemicals (undecylenic acid, UD) to H-terminated PSi surface we studied the two differently treated materials. Differential scanning calorimetry (DSC) and thermogravimetry (TGA), BET and FTIR measurements were performed with the PSi powder samples (n+ doped). Changes in surface area, weight loss, calorific effect and chemical composition that accompanied the thermal treatment have shown that the physisorbed UD molecules undergo a chemical process (binding) with the Si-H{sub x} surface groups at about 150 C in both, N{sub 2} inert atmosphere and in a synthetic air, oxidative atmosphere. Controlled conversion of physically sorbed molecules to the chemically attached ones is discussed with respect to methods of surface modification of PSi materials for increasing their biocompatibility. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Elementary Students' Learning of Materials Science Practices through Instruction Based on Engineering Design Tasks

    Science.gov (United States)

    Wendell, Kristen Bethke; Lee, Hee-Sun

    2010-01-01

    Materials science, which entails the practices of selecting, testing, and characterizing materials, is an important discipline within the study of matter. This paper examines how third grade students' materials science performance changes over the course of instruction based on an engineering design challenge. We conducted a case study of nine…

  3. Oxidation and creep behaviour of dense silicon nitride materials with different compositions

    International Nuclear Information System (INIS)

    Ernstberger, U.

    1985-09-01

    The study was intended to yield information on the oxidation and creep behaviour of Si 3 N 4 materials of different composition and microstructure, and produced by different processes. The experiments carried out in a vast temperature and load range showed that the chemical grain boundary composition is the key parameter affecting the materials' high-temperature properties. Significant correlations could be established between oxidation and creep behaviour on the one hand, and between microstructure and the behaviour on the other. (orig./IHOE) [de

  4. Silicon Sheet Growth Development for the Large Area Sheet Task of the Low Cost Solar Array Project. Heat Exchanger Method - Ingot Casting Fixed Abrasive Method - Multi-Wire Slicing

    Science.gov (United States)

    Schmid, F.; Khattak, C. P.

    1978-01-01

    Solar cells fabricated from HEM cast silicon yielded up to 15% conversion efficiencies. This was achieved in spite of using unpurified graphite parts in the HEM furnace and without optimization of material or cell processing parameters. Molybdenum retainers prevented SiC formation and reduced carbon content by 50%. The oxygen content of vacuum cast HEM silicon is lower than typical Czochralski grown silicon. Impregnation of 45 micrometers diamonds into 7.5 micrometers copper sheath showed distortion of the copper layer. However, 12.5 micrometers and 15 micrometers copper sheath can be impregnated with 45 micrometers diamonds to a high concentration. Electroless nickel plating of wires impregnated only in the cutting edge showed nickel concentration around the diamonds. This has the possibility of reducing kerf. The high speed slicer fabricated can achieve higher speed and longer stroke with vibration isolation.

  5. Investigations of processes of mixing in fabrication of carbonaceous materials and materials of silicon carbide by means of tracer technique

    International Nuclear Information System (INIS)

    Vagner, K.; Bruchin, F.; Ritter, I.; Grech, T.; Tsimmermann, V.; Ebert, G.

    1979-01-01

    A necessary condition for production of carbonic and SiC materials is providing for good mixing of liquid and solid components. Some experiments have been done by application of the method of radioactive marking of one of the components to be mixed for the purpose of investigation of the mixing process in an installation with capacity up to 2000 kg. Marking by the bromine-82 - naphthalene has been found to be suitable. The state of mixture is characterized by the homogeneity of radioactivity distribution which can be determined by measurement of gamma-radiation of series of samples. The mass of sample is from 1 to 100 g, depending on the volume of mixer. Besides it, fine distribution of components was determined by the contact autoradiography of flat surfaces of samples. The results of investigations give possibility to establish technological time of mixing, to compare different mixers and technologies of mixing as well as to determine behaviour of the mixed components. Recommendations have been developed on standardization of this method. Necessary means of radiation protection have been described [ru

  6. Ceria/silicon carbide core–shell materials prepared by miniemulsion technique

    Directory of Open Access Journals (Sweden)

    Lars Borchardt

    2011-09-01

    Full Text Available For the first time we present the synthesis of CeO2/Si(OC core–shell particles prepared by the miniemulsion technique. The Si(OC core was obtained by means of a polycarbosilane precursor (SMP10, which was subsequently functionalized with ceria and pyrolyzed to the ceramic. The size of these particles could easily be adjusted by varying the surfactants and the surfactant concentration, or by the addition of comonomers. Hence particle sizes ranged from 100 to 1000 nm, tunable by the preparation conditions. All materials were characterized by photon cross correlation spectroscopy, scanning electron microscopy and elemental mapping investigations. Furthermore, first catalytic tests were carried out by temperature programmed oxidation (TPO of methane, and the activity of this material in lowering the onset temperature of methane combustion by 262 K was documented.

  7. Nanocrystalline silicon as the light emitting material of a field emission display device

    International Nuclear Information System (INIS)

    Biaggi-Labiosa, A; Sola, F; Resto, O; Fonseca, L F; Gonzalez-BerrIos, A; Jesus, J De; Morell, G

    2008-01-01

    A nanocrystalline Si-based paste was successfully tested as the light emitting material in a field emission display test device that employed a film of carbon nanofibers as the electron source. Stable emission in the 550-850 nm range was obtained at 16 V μm -1 . This relatively low field required for intense cathodoluminescence (CL) from the PSi paste may lead to longer term reliability of both the electron emitting and the light emitting materials, and to lower power consumption. Here we describe the synthesis, characterization, and analyses of the light emitting nanostructured Si paste and the electron emitting C nanofibers used for building the device, including x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The corresponding spectra and field emission curves are also shown and discussed

  8. Mechanical properties of silicone based composites as a temperature insensitive ballistic backing material for quantifying back face deformation.

    Science.gov (United States)

    Edwards, Tara D; Bain, Erich D; Cole, Shawn T; Freeney, Reygan M; Halls, Virginia A; Ivancik, Juliana; Lenhart, Joseph L; Napadensky, Eugene; Yu, Jian H; Zheng, James Q; Mrozek, Randy A

    2018-04-01

    This paper describes a new witness material for quantifying the back face deformation (BFD) resulting from high rate impact of ballistic protective equipment. Accurate BFD quantification is critical for the assessment and certification of personal protective equipment, such as body armor and helmets, and ballistic evaluation. A common witness material is ballistic clay, specifically, Roma Plastilina No. 1 (RP1). RP1 must be heated to nearly 38°C to pass calibration, and used within a limited time frame to remain in calibration. RP1 also exhibits lot-to-lot variability and is sensitive to time, temperature, and handling procedures, which limits the BFD accuracy and reproducibility. A new silicone composite backing material (SCBM) was developed and tested side-by-side with heated RP1 using quasi-static indentation and compression, low velocity impact, spherical projectile penetration, and both soft and hard armor ballistic BFD measurements to compare their response over a broad range of strain rates and temperatures. The results demonstrate that SCBM mimics the heated RP1 response at room temperature and exhibits minimal temperature sensitivity. With additional optimization of the composition and processing, SCBM could be a drop-in replacement for RP1 that is used at room temperature during BFD quantification with minimal changes to the current RP1 handling protocols and infrastructure. It is anticipated that removing the heating requirement, and temperature-dependence, associated with RP1 will reduce test variability, simplify testing logistics, and enhance test range productivity. Published by Elsevier B.V.

  9. Preparation and characterization of flame retardant n-hexadecane/silicon dioxide composites as thermal energy storage materials.

    Science.gov (United States)

    Fang, Guiyin; Li, Hui; Chen, Zhi; Liu, Xu

    2010-09-15

    Flame retardant n-hexadecane/silicon dioxide (SiO(2)) composites as thermal energy storage materials were prepared using sol-gel methods. In the composites, n-hexadecane was used as the phase change material for thermal energy storage, and SiO(2) acted as the supporting material that is fire resistant. In order to further improve flame retardant property of the composites, the expanded graphite (EG) was added in the composites. Fourier transformation infrared spectroscope (FT-IR), X-ray diffractometer (XRD) and scanning electronic microscope (SEM) were used to determine chemical structure, crystalloid phase and microstructure of flame retardant n-hexadecane/SiO(2) composites, respectively. The thermal properties and thermal stability were investigated by a differential scanning calorimeter (DSC) and a thermogravimetric analysis apparatus (TGA), respectively. The SEM results showed that the n-hexadecane was well dispersed in the porous network of the SiO(2). The DSC results indicated that the melting and solidifying latent heats of the composites are 147.58 and 145.10 kJ/kg when the mass percentage of the n-hexadecane in the composites is 73.3%. The TGA results showed that the loading of the EG increased the charred residue amount of the composites at 700 degrees C, contributing to the improved thermal stability of the composites. It was observed from SEM photographs that the homogeneous and compact charred residue structure after combustion improved the flammability of the composites. Copyright 2010 Elsevier B.V. All rights reserved.

  10. Carbon Nanofiber/3D Nanoporous Silicon Hybrids as High Capacity Lithium Storage Materials.

    Science.gov (United States)

    Park, Hyeong-Il; Sohn, Myungbeom; Kim, Dae Sik; Park, Cheolho; Choi, Jeong-Hee; Kim, Hansu

    2016-04-21

    Carbon nanofiber (CNF)/3D nanoporous (3DNP) Si hybrid materials were prepared by chemical etching of melt-spun Si/Al-Cu-Fe alloy nanocomposites, followed by carbonization using a pitch. CNFs were successfully grown on the surface of 3DNP Si particles using residual Fe impurities after acidic etching, which acted as a catalyst for the growth of CNFs. The resulting CNF/3DNP Si hybrid materials showed an enhanced cycle performance up to 100 cycles compared to that of the pristine Si/Al-Cu-Fe alloy nanocomposite as well as that of bare 3DNP Si particles. These results indicate that CNFs and the carbon coating layer have a beneficial effect on the capacity retention characteristics of 3DNP Si particles by providing continuous electron-conduction pathways in the electrode during cycling. The approach presented here provides another way to improve the electrochemical performances of porous Si-based high capacity anode materials for lithium-ion batteries. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Thermal-Hydraulic Aspects of Changing the Nuclear Fuel-Cladding Materials from Zircaloy to Silicon Carbides

    International Nuclear Information System (INIS)

    Niceno, Bojan; Pouchon, Manuel

    2014-01-01

    The accident in Fukushima has drastically shown the drawbacks of Zircaloy claddings despite their beneficial properties in normal use. The effect of the lack of cooling and the production of hydrogen would not have been so strong if the fuel cladding had not consisted of a zirconium (or metal) alloy. International activities have been started to search for an alternative to Zircaloy, however, still on a limited basis. A project sponsored by Swissnuclear has been conducted at Paul Scherrer Institute (PSI) with the aim to close the gap in knowledge on application of silicon carbides (SiC) as potential replacement for Zircaloys as material for nuclear fuel cladding. The work was interdisciplinary, result of collaboration between different laboratories at PSI, and has focused on SiC cladding material properties, implication of its usage on neutronics and on thermal-hydraulics. This paper summarizes thermal-hydraulic aspects of changing Zircaloy for SiC as the cladding material. The change of cladding material inevitably changes the surface properties thus making a significant impact on boiling curve, and critical heat flux (CHF). Low chemical reactivity of SiC means fewer particles in the flow (less crud), which leads to fewer failures, but also decreases the CHF. Due to differences in physical properties between SiC and Zircaloys, higher brittleness of SiC in particular, might have impact on fuel-rod assembly design, which has direct influence on flow patterns and heat transfer in the fuel assembly. Higher melting (i.e. decomposition) point for SiC means that severe accident management guidelines (SAMG) should have to be re-assessed. Not only would the core degrade later than in the case of conventional fuels, but the production of hydrogen would be quite different as well. All these issues are explored in this work in two steps; first the SiC properties which may have influence on thermal-hydraulics are outlined, then each thermal-hydraulic issues is explained from

  12. Development of technology of complex aluminum-silicon-chrome alloy with utilization of off grade raw materials

    Directory of Open Access Journals (Sweden)

    A. Mekhtiev

    2015-01-01

    Full Text Available Experimental studies on obtaining a complex aluminum-silicon-chrome alloy (FASCh from Karaganda high-ash coals and high-carbon ferrochromefines were carried out. A method for smelting low-carbon ferrochrome using aluminum-silicon-chrome alloy as a reductant is suggested.

  13. Gender involvement in manual material handling (mmh) tasks in agriculture and technology intervention to mitigate the resulting musculoskeletal disorders.

    Science.gov (United States)

    Singh, Suman; Sinwal, Neelima; Rathore, Hemu

    2012-01-01

    The lifting and carrying of loads in agriculture on small landholdings are unavoidable. Rural communities often lack access to appropriate technologies which may result in various health hazards. The objective was to study gender participation in agricultural activities involving manual material handling tasks, to assess MSDs experienced in various MMH tasks and to evaluate traditional method and designed technology. The study was conducted on 100 agricultural workers. Data on gender participation in MMH tasks in household, animal husbandry and agriculture and resulting MSDs was gathered. Pre and post assessment of technology intervention was done for NIOSH Lifting Index, QEC, and RPE. The results revealed greater susceptibility of females to musculoskeletal problems in most of the household and animal husbandry tasks. The hand trucks designed were pushing type with power grasp handle. The respondents were advised to carry 5 kg of weight per lift instead of lifting more weight in one lift/minute while filling the hand truck. By decreasing the weight and increasing the number of lifts per minute the respondents were seen falling in green zone indicating significant reduction in NIOSH lifting index. QEC scores concluded that for filling the hand truck 5 kg of weight should be carried to keep the exposure level low.

  14. Silicon carbide, a ceramic material for the pump technology?; Siliciumcarbid - eine Keramik fuer die Pumpentechnologie

    Energy Technology Data Exchange (ETDEWEB)

    Vitzthum, E. [CeramTec AG, Lauf (Germany). Marketing und Customer Service

    2000-12-01

    Pumping of gases and liquids makes extreme demands on sliding bearings and their seals, especially if the material to be pumped is corrosive or contains abrasive constituents. Wear and corrosion are important economic factors. They shorten the life of machines and systems and cause standstill times and repair cost. All this decides the profitability of pumps and the competitive strength of products. In view of all this, it becomes clear why optimal materials selection is a crucial points in pumps and pumping systems. [German] Beim Foerdern von Gasen und Fluessigkeiten werden extrem hohe Anforderungen an Gleitlager und Gleitringdichtungen in Pumpen gestellt, die im direkten Kontakt mit dem zu foerdernden Medium sind, besonders dann, wenn das Medium korrosiv ist oder abrasive Bestandteile enthaelt. Verschleiss und Korrosion sind wesentliche Wirtschaftsfaktoren. Sie bestimmen die Standzeit von Maschinen und Anlagen, verursachen Betriebsstillstandszeiten und Reparaturkosten. Diese entscheiden ueber die Rentabilitaet von Prozessen und die Wettbewerbsfaehigkeit von Produkten, was eine optimale Auswahl des Werkstoffs auch in Pumpen und Pumpenanlagen unerlaesslich macht. (orig.)

  15. Synthesis of silicon containing materials using liquid hydrosilane compositions through direct injection

    Energy Technology Data Exchange (ETDEWEB)

    Srinivasan, Guruvenket; Sailer, Robert A.; Hoey, Justin

    2018-03-13

    An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.

  16. Preliminary study for development of low dose radiation shielding material using liquid silicon and metallic compound

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Seo Goo; Lee, Sung Soo [Dept. of Medical Science, Graduate School of Soonchunhyang University, Asan (Korea, Republic of); Han, Su Chul [Div. of Medical Radiation Equipment, Korea Institute of Radiological and Medical Sciences, Seoul (Korea, Republic of); Kang, Sung Jin [SoonChunHyang University Hospital, Seoul (Korea, Republic of); Lim, Sung Wook [Graduate school of SeJong University, Seoul (Korea, Republic of)

    2017-09-15

    This study measured and compared the protective clothing using Pb used for shielding in a diagnostic X-ray energy range, and the shielding rates of X-ray fusion shielding materials using Si and TiO{sub 2}. For the experiment, a pad type shielding with a thickness of 1 mm was prepared by mixing Si-TiO{sub 2}, and the X-ray shielding rate was compared with 0.5 mmPb plate of The shielding rate of shielding of 0.5 mmPb plate 95.92%, 85.26 % based on the case of no shielding under each 60kVp, 100kVp tube voltage condition. When the shielding of Si-TiO{sub 2} pad was applied, the shielding rate equal to or greater than 0.5 mmPb plate was obtained at a thickness of 11 mm or more, and the shielding rate of 100% or more was confirmed at a thickness of 13 nn in 60kVp condition. When the shielding of Si-TiO{sub 2} pad was applied, the shielding rate equal to or greater than 0.5 mmPb plate was obtained at a thickness of 17 mm or more, and a shielding rate of 0.5 mmPb plate was observed at a thickness of 23 mm in 100kVp condition. Through the results of this study, We could confirm the possibility of manufacturing radiation protective materials that does not contain lead hazard using various metallic compound and liquid Si. This study shows that possibility of liquid Si and other metallic compound can harmonize easily. Beside, It is flexible and strong to physical stress than Pb obtained radiation protective clothes. But additional studies are needed to increase the shielding rate and reduce the weight.

  17. The effects of glucose dose and dual-task performance on memory for emotional material

    OpenAIRE

    Brandt, Karen; Sünram-Lea, Sandra; Jenkinson, Paul; Jones, Emma

    2010-01-01

    Whilst previous research has shown that glucose administration can boost memory performance, research investigating the effects of glucose on memory for emotional material has produced mixed findings. Whereas some research has shown that glucose impairs memory for emotional material, other research has shown that glucose has no effect on emotional items. The aim of the present research was therefore to provide further investigation of the role of glucose on the recognition of words with emoti...

  18. Co-implantation of carbon and nitrogen into silicon dioxide for synthesis of carbon nitride materials

    CERN Document Server

    Huang, M B; Nuesca, G; Moore, R

    2002-01-01

    Materials synthesis of carbon nitride has been attempted with co-implantation of carbon and nitrogen into thermally grown SiO sub 2. Following implantation of C and N ions to doses of 10 sup 1 sup 7 cm sup - sup 2 , thermal annealing of the implanted SiO sub 2 sample was conducted at 1000 degree sign C in an N sub 2 ambient. As evidenced in Fourier transform infrared measurements and X-ray photoelectron spectroscopy, different bonding configurations between C and N, including C-N single bonds, C=N double bonds and C=N triple bonds, were found to develop in the SiO sub 2 film after annealing. Chemical composition profiles obtained with secondary ion mass spectroscopy were correlated with the depth information of the chemical shifts of N 1s core-level electrons, allowing us to examine the formation of C-N bonding for different atomic concentration ratios between N and C. X-ray diffraction and transmission electron microscopy showed no sign of the formation of crystalline C sub 3 N sub 4 precipitates in the SiO ...

  19. Luminescence properties of Ce3+-activated alkaline earth silicon nitride M2Si5N8 (M = Ca, Sr, Ba) materials

    NARCIS (Netherlands)

    Li, Y.Q.; With, de G.; Hintzen, H.T.J.M.

    2006-01-01

    The luminescence properties of Ce3+, Li+ or Na+ co-doped alkaline-earth silicon nitride M2Si5N8 (M=Ca, Sr, Ba) are reported. The solubility of Ce3+ and optical properties of M2-2xCexLixSi5N8 (x0.1) materials have been investigated as function of the cerium concentration by X-ray powder diffraction

  20. Facile synthesis and stable cycling ability of hollow submicron silicon oxide–carbon composite anode material for Li-ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joong-Yeon; Nguyen, Dan Thien [Department of Fine Chemical Engineering & Applied Chemistry, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kang, Joon-Sup [Department of Energy Science and Technology, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Song, Seung-Wan, E-mail: swsong@cnu.ac.kr [Department of Fine Chemical Engineering & Applied Chemistry, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Department of Energy Science and Technology, Chungnam National University, Daejeon 305-764 (Korea, Republic of)

    2015-06-05

    Highlights: • Hollow submicron SiO{sub 2}–carbon composite material was synthesized using Si{sup 4+}-citrate chelation. • Composite material possessed a homogeneous distribution of SiO{sub 2} and carbon. • Composite electrode delivered ⩾600 mAh/g with a stable cycling stability. • This materials design and synthesis provides a useful platform for scalable production. - Abstract: Advanced SiO{sub 2}–carbon composite anode active material for lithium-ion battery has been synthesized through a simple chelation of silicon cation with citrate in a glyme-based solvent. The resultant composite material demonstrates a homogeneous distribution of constituents over the submicron particles and a unique hollow spherical microstructure, which provides an enhanced electrical conductivity and better accommodation of volume change of silicon during electrochemical charge–discharge cycling, respectively. As a result, the composite electrode exhibits a high cycling stability delivering the capacity retention of 91% at the 100th cycle and discharge capacities of 662–602 mAh/g and coulombic efficiencies of 99.8%. This material synthesis is scalable and cost-effective in preparing various submicron or micron composite electrode materials.

  1. THE APPLICATION'S WAYS OF PROBLEM-ORIENTED TASKS FOR DEVELOPMENT OF EDUCATIONAL MATERIALS IN THE DISTANCE COURSE "EXPERIMENTAL PSYCHOLOGY"

    Directory of Open Access Journals (Sweden)

    M. A. Salyuk

    2009-05-01

    Full Text Available Some principles on which it is expedient to lean in the process of the development of materials of distant educational courses are considered: support on multiplicity of form of representation of information in consciousness; an account of conformity to law of maintenance of information in semantic memory of man; integration of educational information in the personal experience; orientation on the future real professional activity at the design of base of executive knowledge. Application of principles is illustrated by the examples of tasks in the distance educational course «Experimental psychology».

  2. Singlet oxygen sensitizing materials based on porous silicone: photochemical characterization, effect of dye reloading and application to water disinfection with solar reactors.

    Science.gov (United States)

    Manjón, Francisco; Santana-Magaña, Montserrat; García-Fresnadillo, David; Orellana, Guillermo

    2010-06-01

    Photogeneration of singlet molecular oxygen ((1)O(2)) is applied to organic synthesis (photooxidations), atmosphere/water treatment (disinfection), antibiofouling materials and in photodynamic therapy of cancer. In this paper, (1)O(2) photosensitizing materials containing the dyes tris(4,4'-diphenyl-2,2'-bipyridine)ruthenium(II) (1, RDB(2+)) or tris(4,7-diphenyl-1,10-phenanthroline)ruthenium(II) (2, RDP(2+)), immobilized on porous silicone (abbreviated RDB/pSil and RDP/pSil), have been produced and tested for waterborne Enterococcus faecalis inactivation using a laboratory solar simulator and a compound parabolic collector (CPC)-based solar photoreactor. In order to investigate the feasibility of its reuse, the sunlight-exposed RDP/pSil sensitizing material (RDP/pSil-a) has been reloaded with RDP(2+) (RDP/pSil-r). Surprisingly, results for bacteria inactivation with the reloaded material have demonstrated a 4-fold higher efficiency compared to those of either RDP/pSil-a, unused RDB/pSil and the original RDP/pSil. Surface and bulk photochemical characterization of the new material (RDP/pSil-r) has shown that the bactericidal efficiency enhancement is due to aggregation of the silicone-supported photosensitizer on the surface of the polymer, as evidenced by confocal fluorescence lifetime imaging microscopy (FLIM). Photogenerated (1)O(2) lifetimes in the wet sensitizer-doped silicone have been determined to be ten times longer than in water. These facts, together with the water rheology in the solar reactor and the interfacial production of the biocidal species, account for the more effective disinfection observed with the reloaded photosensitizing material. These results extend and improve the operational lifetime of photocatalytic materials for point-of-use (1)O(2)-mediated solar water disinfection.

  3. Process research of non-cz silicon material. Low cost solar array project, cell and module formation research area

    Science.gov (United States)

    1982-01-01

    Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated.

  4. Low cost solar array project: Cell and module formation research area. Process research of non-CZ silicon material

    Science.gov (United States)

    1983-01-01

    Meniscus coates tests, back junction formation using a new boron containing liquid, tests of various SiO2 and boron containing liquids, pelletized silicon for replenishment during web growth, and ion implantation compatibility/feasibility study are discussed.

  5. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

    2015-01-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  6. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  7. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  8. Final Report, Materials for Industrial Heat Recovery Systems, Task 1 Improved Materials and Operation of Recuperators for Aluminum Melting Furnaces

    Energy Technology Data Exchange (ETDEWEB)

    Keiser, James R.; Sarma, Gorti B.; Thekdi, Arvind; Meisner Roberta A.; Phelps, Tony; Willoughby, Adam W.; Gorog, J. Peter; Zeh, John; Ningileri, Shridas; Liu, Yansheng; Xiao, Chenghe

    2007-09-30

    Production of aluminum is a very energy intensive process which is increasingly more important in the USA. This project concentrated on the materials issues associated with recovery of energy from the flue gas stream in the secondary industry where scrap and recycled metal are melted in large furnaces using gas fired burners. Recuperators are one method used to transfer heat from the flue gas to the air intended for use in the gas burners. By preheating this combustion air, less fuel has to be used to raise the gas temperature to the desired level. Recuperators have been successfully used to preheat the air, however, in many cases the metallic recuperator tubes have a relatively limited lifetime – 6 to 9 months. The intent of this project was to determine the cause of the rapid tube degradation and then to recommend alternative materials or operating conditions to prolong life of the recuperator tubes. The first step to understanding degradation of the tubes was to examine exposed tubes to identify the corrosion products. Analyses of the surface scales showed primarily iron oxides rather than chromium oxide suggesting the tubes were probably cycled to relatively high temperatures to the extent that cycling and subsequent oxide spalling reduced the surface concentration of chromium below a critical level. To characterize the temperatures reached by the tubes, thermocouples were mounted on selected tubes and the temperatures measured. During the several hour furnace cycle, tube temperatures well above 1000°C were regularly recorded and, on some occasions, temperatures of more than 1100°C were measured. Further temperature characterization was done with an infrared camera, and this camera clearly showed the variations in temperature across the first row of tubes in the four recuperator modules. Computational fluid dynamics was used to model the flow of combustion air in the tubes and the flue gas around the outside of the tubes. This modeling showed the

  9. Grip force and heart rate responses to manual carrying tasks: effects of material, weight, and base area of the container.

    Science.gov (United States)

    Lee, Tzu-Hsien; Tseng, Chia-Yun

    2014-01-01

    This study recruited 16 industrial workers to examine the effects of material, weight, and base area of container on reduction of grip force (ΔGF) and heart rate for a 100-m manual carrying task. This study examined 2 carrying materials (iron and water), 4 carrying weights (4.4, 8.9, 13.3, 17.8 kg), and 2 base areas of container (24 × 24 cm, 35 × 24 cm). This study showed that carrying water significantly increased ΔGF and heart rate as compared with carrying iron. Also, ΔGF and heart rate significantly increased with carrying weight and base area of container. The effects of base area of container on ΔGF and heart rate were greater in carrying water condition than in carrying iron condition. The maximum dynamic effect of water on ΔGF and heart rate occurred when water occupied ~60%-80% of full volume of the container.

  10. The New Silicon Strip Detectors for the CMS Tracker Upgrade

    CERN Document Server

    Dragicevic, Marko

    2010-01-01

    The first introductory part of the thesis describes the concept of the CMS experiment. The tasks of the various detector systems and their technical implementations in CMS are explained. To facilitate the understanding of the basic principles of silicon strip sensors, the subsequent chapter discusses the fundamentals in semiconductor technology, with particular emphasis on silicon. The necessary process steps to manufacture strip sensors in a so-called planar process are described in detail. Furthermore, the effects of irradiation on silicon strip sensors are discussed. To conclude the introductory part of the thesis, the design of the silicon strip sensors of the CMS Tracker are described in detail. The choice of the substrate material and the complex geometry of the sensors are reviewed and the quality assurance procedures for the production of the sensors are presented. Furthermore the design of the detector modules are described. The main part of this thesis starts with a discussion on the demands on the ...

  11. Elite silicon and solar power

    International Nuclear Information System (INIS)

    Yasamanov, N.A.

    2000-01-01

    The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production [ru

  12. A Monte Carlo computer code for evaluating energy loss of 10 keV to 10 MeV ions in amorphous silicon materials

    International Nuclear Information System (INIS)

    Erramli, H.; Elbounagui, O.; Misdaq, M.A.; Merzouki, A.

    2007-01-01

    The basic concepts of a computer simulation code for determining the energy loss of ions in the 10 keV to 10 MeV energy range in amorphous silicon materials were presented and discussed. Data obtained were found in good agreement with those obtained by using a SRIM programme. Electronic and nuclear energy losses were evaluated. Variation of the energy loss as a function of the incident ion energy were studied. This new computer code is a good tool for evaluating stopping powers of various materials for light and heavy ions

  13. Experimental evaluation and design of unfilled and concrete-filled FRP composite piles : Task 4B : material & construction specifications : final report.

    Science.gov (United States)

    2015-07-01

    The overall goal of this project is the experimental evaluation and design of unfilled and concrete-filled FRP composite piles for load-bearing in bridges. This report covers Task 4B, Materials and Construction Specifications. : This technical report...

  14. Fiscal 1993 R and D project for industrial science and technology. Report on results of R and D on silicon-based high polymer material; 1993 nendo keisokei kobunshi zairyo no kenkyu kaihtsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-03-01

    R and D was conducted on the silicon-based high polymer that are hoped for superior electronic/optical functions and heat/flame-resistant dynamical properties, for the purpose of establishing fundamental technologies such as molecular design, synthesis, material forming and evaluation method, with the fiscal 1993 results summarized. In the synthesis of electrically conductive silicon-based polymeric materials, a concept of indirect doping was presented, revealing that workability and electrically conductive properties were enhanced by additives. In the synthesis of new silicon-based polymeric materials capable of circuit plotting, studies were made on Si-Si bond forming reaction of alkoxydisilanes as well as on the correlation between polysilane skeleton structure and its property. In the synthesis of new silicon-based polymeric materials having for example a light-emitting function, evaluation was made on synthesis and light emitting property concerning the compound that controlled the silicon skeleton structure. In addition, R and D was conducted on the precision synthesis technology of compounds, on which manifestation of photoelectric conversion function was expected. Further, research was done on unsaturated and high coordination organosilicic compound, functionality of silicon-based high polymer, and synthesis/polymerization of silicon monomer. (NEDO)

  15. Laser-zone Growth in a Ribbon-to-ribbon (RTR) Process Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

    Science.gov (United States)

    Baghdadi, A.; Gurtler, R. W.; Legge, R.; Sopori, B.; Rice, M. J.; Ellis, R. J.

    1979-01-01

    A technique for growing limited-length ribbons continually was demonstrated. This Rigid Edge technique can be used to recrystallize about 95% of the polyribbon feedstock. A major advantage of this method is that only a single, constant length silicon ribbon is handled throughout the entire process sequence; this may be accomplished using cassettes similar to those presently in use for processing Czochralski waters. Thus a transition from Cz to ribbon technology can be smoothly affected. The maximum size being considered, 3 inches x 24 inches, is half a square foot, and will generate 6 watts for 12% efficiency at 1 sun. Silicon dioxide has been demonstrated as an effective, practical diffusion barrier for use during the polyribbon formation.

  16. Silicon Ingot Casting - Heat Exchanger Method (HEM). Multi-Wire Slicing - Fixed Abrasive Slicing Technique (Fast). Phase 4 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-Cost Solar Array Project

    Science.gov (United States)

    Schmid, F.

    1981-01-01

    The crystallinity of large HEM silicon ingots as a function of heat flow conditions is investigated. A balanced heat flow at the bottom of the ingot restricts spurious nucleation to the edge of the melted-back seed in contact with the crucible. Homogeneous resistivity distribution over all the ingot has been achieved. The positioning of diamonds electroplated on wirepacks used to slice silicon crystals is considered. The electroplating of diamonds on only the cutting edge is described and the improved slicing performance of these wires evaluated. An economic analysis of value added costs of HEM ingot casting and band saw sectioning indicates the projected add on cost of HEM is well below the 1986 allocation.

  17. Application of mathematical model methods for optimization tasks in construction materials technology

    Science.gov (United States)

    Fomina, E. V.; Kozhukhova, N. I.; Sverguzova, S. V.; Fomin, A. E.

    2018-05-01

    In this paper, the regression equations method for design of construction material was studied. Regression and polynomial equations representing the correlation between the studied parameters were proposed. The logic design and software interface of the regression equations method focused on parameter optimization to provide the energy saving effect at the stage of autoclave aerated concrete design considering the replacement of traditionally used quartz sand by coal mining by-product such as argillite. The mathematical model represented by a quadric polynomial for the design of experiment was obtained using calculated and experimental data. This allowed the estimation of relationship between the composition and final properties of the aerated concrete. The surface response graphically presented in a nomogram allowed the estimation of concrete properties in response to variation of composition within the x-space. The optimal range of argillite content was obtained leading to a reduction of raw materials demand, development of target plastic strength of aerated concrete as well as a reduction of curing time before autoclave treatment. Generally, this method allows the design of autoclave aerated concrete with required performance without additional resource and time costs.

  18. Superconducting Gamma/Neutron Spectrometer Task 1 Completion Report Evaluation of Candidate Neutron-Sensitive Materials

    CERN Document Server

    Bell, Z W

    2002-01-01

    A review of the scientific literature regarding boron- and lithium-containing compounds was completed. Information such as Debye temperature, heat capacity, superconductivity properties, physical and chemical characteristics, commercial availability, and recipes for synthesis was accumulated and evaluated to develop a list of neutron-sensitive materials likely to perform properly in the spectrometer. The best candidate borides appear to be MgB sub 2 (a superconductor with T sub c = 39 K), B sub 6 Si, B sub 4 C, and elemental boron; all are commercially available. Among the lithium compounds are LiH, LiAl, Li sub 1 sub 2 Si sub 7 , and Li sub 7 Sn sub 2. These materials have or are expected to have high Debye temperatures and sufficiently low heat capacities at 100 mK to produce a useful signal. The responses of sup 1 sup 0 B and sup 6 Li to a fission neutron spectrum were also estimated. These demonstrated that the contribution of scattering events is no more than 3% in a boron-based system and 1.5% in a lith...

  19. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  20. Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantation

    International Nuclear Information System (INIS)

    Lam, H.W.; Pinizzotto, R.F.; Yuan, H.T.; Bellavance, D.W.

    1981-01-01

    By implanting a dose of 6 x 10 17 cm -2 of 32 O 2 + at 300 keV into a silicon wafer, a buried oxide layer is formed. Crystallinity of the silicon layer above the buried oxide layer is maintained by applying a high (>200 0 C) substrate temperature during the ion implantation process. A two-step anneal cycle is found to be adequate to form the insulating buried oxide layer and to repair the implantation damage in the silicon layer on top of the buried oxide. A surface electron mobility as high as 710 cm 2 /Vs has been measured in n-channel MOSFETs fabricated in a 0.5 μm-thick epitaxial layer grown on the buried oxide wafer. A minimum subthreshold current of about 10 pA per micron of channel width at Vsub(DS)=2 V has been measured. (author)

  1. Wear characteristics of TiO[sub 2] coating and silicon carbide alloyed layer on Ti-6Al-4V material

    Energy Technology Data Exchange (ETDEWEB)

    Karamis, M.B. (Dept. of Mechanical Engineering, Erciyes Univ., Kayseri (Turkey))

    1992-08-14

    Wear properties of Ti-6Al-4V material (IMI-318) TiO[sub 2] coated and electron beam alloyed with silicon carbide were tested. Thickness of oxide coating, alloying conditions and properties of the alloyed layer such as hardness, layer thickness and microstructure are described. Wear tests were carried out on a general-purpose wear machine by using a disc-disc sample configuration under lubricated conditions. Counterface materials to oxide-coated and to surface-alloyed specimens were plasma-nitrided AISI 51100 and hardened AISI 4140 respectively. The resulting weight loss and wear resistance were monitored as a function of sliding distance and applied load. Although the electron beam alloying improved the wear resistance of Ti-6Al-4V material, the oxide coatings on the material were not resistant to wear. (orig.).

  2. Luminescence of porous silicon doped by erbium

    International Nuclear Information System (INIS)

    Bondarenko, V.P.; Vorozov, N.N.; Dolgij, L.N.; Dorofeev, A.M.; Kazyuchits, N.M.; Leshok, A.A.; Troyanova, G.N.

    1996-01-01

    The possibility of the 1.54 μm intensive luminescence in the silicon dense porous layers, doped by erbium, with various structures is shown. Low-porous materials of both porous type on the p-type silicon and porous silicon with wood-like structure on the n + type silicon may be used for formation of light-emitting structures

  3. Silicon Ingot Casting - Heat Exchanger Method Multi-wire Slicing - Fixed Abrasive Slicing Technique. Phase 3 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-cost Solar Array Project

    Science.gov (United States)

    Schmid, F.; Khattak, C. P.

    1979-01-01

    Several 20 cm diameter silicon ingots, up to 6.3 kg. were cast with good crystallinity. The graphite heat zone can be purified by heating it to high temperatures in vacuum. This is important in reducing costs and purification of large parts. Electroplated wires with 45 um synthetic diamonds and 30 um natural diamonds showed good cutting efficiency and lifetime. During slicing of a 10 cm x 10 cm workpiece, jerky motion occurred in the feed and rocking mechanisms. This problem is corrected and modifications were made to reduce the weight of the bladeheat by 50%.

  4. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  5. A compilation of silicon, rare earth element and twenty-one other trace element concentrations in the natural river water reference material SLRS-5 (NRC-CNRC)

    International Nuclear Information System (INIS)

    Yeghicheyan, Delphine; Cloquet, Christophe; Bossy, Cecile; Bouhnik Le Coz, Martine; Douchet, Chantal; Granier, Guy; Heimburger, Alexie; Losno, Remi; Lacan, Francois; Labatut, Marie; Pradoux, Catherine; Lanzanova, Aurelie; Candaudap, Frederic; Chmeleff, Jerome; Rousseau, Tristan C.C.; Seidel, Jean-Luc; Delpoux, Sophie; Tharaud, Mickael; Sivry, Yann; Sonke, Jeroen E.

    2013-01-01

    The natural river water certified reference material SLRS-5 (NRC-CNRC) was routinely analysed in this study for major and trace elements by ten French laboratories. Most of the measurements were made using ICP-MS. Because no certified values are assigned by NRC-CNRC for silicon and 35 trace element concentrations (rare earth elements, Ag, B, Bi, Cs, Ga, Ge, Li, Nb, P, Rb, Rh, Re, S, Sc, Sn, Th, Ti, Tl, W, Y and Zr), or for isotopic ratios, we provide a compilation of the concentrations and related uncertainties obtained by the participating laboratories. Strontium isotopic ratios are also given. (authors)

  6. Low cost silicon solar array project. Task 1: Establishment of the feasibility of a process capable of low cost, high volume production of silane, SiH4

    Science.gov (United States)

    Breneman, W. C.; Mui, J. Y. P.

    1976-01-01

    The kinetics of the redistribution of dichlorosilane and trichlorosilane vapor over a tertiary amine ion exchange resin catalyst were investigated. The hydrogenation of SiCl4 to form HSiCl3 and the direct synthesis of H2SiCl2 from HCl gas and metallurgical silicon metal were also studied. The purification of SiH4 using activated carbon adsorbent was studied along with a process for storing SiH4 absorbed on carbon. The latter makes possible a higher volumetric efficiency than compressed gas storage. A mini-plant designed to produce ten pounds per day of SiH4 is described.

  7. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  8. Task 1. Monitoring real time materials degradation. NRC extended In-situ and real-time Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Bakhtiari, Sasan [Argonne National Lab. (ANL), Argonne, IL (United States)

    2012-03-01

    The overall objective of this project was to perform a scoping study to identify, in concert with the nuclear industry, those sensors and techniques that have the most promising commercial viability and fill a critical inspection or monitoring need. Candidates to be considered include sensors to monitor real-time material degradation, characterize residual stress, monitor and inspect component fabrication, assess radionuclide and associated chemical species concentrations in ground water and soil, characterize fuel properties, and monitor severe accident conditions. Under Task 1—Monitoring Real-Time Materials Degradation—scoping studies were conducted to assess the feasibility of potential inspection and monitoring technologies (i.e., a combination of sensors, advanced signal processing techniques, and data analysis methods) that could be utilized in LWR and/or advanced reactor applications for continuous monitoring of degradation in-situ. The goal was to identify those techniques that appear to be the most promising, i.e., those that are closest to being both technically and commercially viable and that the nuclear industry is most likely to pursue. Current limitations and associated issues that must be overcome before commercial application of certain techniques have also been addressed.

  9. Preparation and properties of lauric acid/silicon dioxide composites as form-stable phase change materials for thermal energy storage

    International Nuclear Information System (INIS)

    Fang Guiyin; Li Hui; Liu Xu

    2010-01-01

    Form-stable lauric acid (LA)/silicon dioxide (SiO 2 ) composite phase change materials were prepared using sol-gel methods. The LA was used as the phase change material for thermal energy storage, with the SiO 2 acting as the supporting material. The structural analysis of these form-stable LA/SiO 2 composite phase change materials was carried out using Fourier transformation infrared spectroscope (FT-IR). The microstructure of the form-stable composite phase change materials was observed by a scanning electronic microscope (SEM). The thermal properties and thermal stability were investigated by a differential scanning calorimeter (DSC) and a thermogravimetric analysis apparatus (TGA), respectively. The SEM results showed that the LA was well dispersed in the porous network of SiO 2 . The DSC results indicated that the melting latent heat of the form-stable composite phase change material is 117.21 kJ kg -1 when the mass percentage of the LA in the SiO 2 is 64.8%. The results of the TGA showed that these materials have good thermal stability. The form-stable composite phase change materials can be used for thermal energy storage in waste heat recovery and solar heating systems.

  10. Silicon oxynitride based photonics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M.; Jaworski, M.; Zdanowicz, M.

    2008-01-01

    Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material

  11. Radiation resistant passivation of silicon solar cells

    International Nuclear Information System (INIS)

    Swanson, R.M.; Gan, J.Y.; Gruenbaum, P.E.

    1991-01-01

    This patent describes a silicon solar cell having improved stability when exposed to concentrated solar radiation. It comprises a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in the body for collecting electrons and holes created by impinging radiation, and a passivation layer on the major surface including a first layer of silicon oxide in contact with the body and a polycrystalline silicon layer on the first layer of silicon oxide

  12. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  13. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  14. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  15. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  16. Hybrid Silicon-Based Organic/Inorganic Block Copolymers with Sol-Gel Active Moieties: Synthetic Advances, Self-Assembly and Applications in Biomedicine and Materials Science.

    Science.gov (United States)

    Czarnecki, Sebastian; Bertin, Annabelle

    2018-03-07

    Hybrid silicon-based organic/inorganic (multi)block copolymers are promising polymeric precursors to create robust nano-objects and nanomaterials due to their sol-gel active moieties via self-assembly in solution or in bulk. Such nano-objects and nanomaterials have great potential in biomedicine as nanocarriers or scaffolds for bone regeneration as well as in materials science as Pickering emulsifiers, photonic crystals or coatings/films with antibiofouling, antibacterial or water- and oil-repellent properties. Thus, this Review outlines recent synthetic efforts in the preparation of these hybrid inorganic/organic block copolymers, gives an overview of their self-assembled structures and finally presents recent examples of their use in the biomedical field and material science. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. [Research on resources chemistry of Chinese medicinal materials and resources recycling utilization ways and goals and tasks].

    Science.gov (United States)

    Duan, Jin-ao; Su, Shu-lan; Guo, Sheng; Jiang, Shu; Liu, Pei; Yan, Hui; Qian, Da-wei; Zhu, Hua-xu; Tang, Yu-ping; Wu, Qi-nan

    2015-09-01

    The objects of research on the resources chemistry of Chinese medicinal materials (RCCMM) are promotion of efficient production, rational utilization and improving quality of CMM and natural products. The development of TCM cause depends on the efficient utilization and sustainable development of CMM, hinges on the technologies and methods for using and discovering medicinal biological resources, stand or fall on the extension of industy chains, detailed utilizaion of resource chemical components by multi-way, multi-level. All of these may help to the recycling utilization and sound development of RCMM. In this article, five respects were discussed to the RCCMM researches and resources recycling utilization ways and goals and tasks. First, based on the principle of resource scarcity, discovering or replacing CMM resources, protecting the rare or endangered species or resources. Second, based on the multifunctionality of CMM, realizing the value-added and value compensation, and promoting the utilization efficiency through systermatic and detailed exploitation and utilization. Third, based on the resource conservation and environment-friendly, reducing raw material consumption, lowering cost, promoting recycling utilization and elevating utilization efficiency. Fourth, based on the stratege of turning harm into good, using the invasive alien biological resources by multi-ways and enriching the medicial resources. Fifth, based on the method of structure modification of chemical components, exploring and enhancing the utility value of resouces chemical substances. These data should provide references and attention for improving the utilization efficiency, promoting the development of recycling economy, and changing the mode of economic growth of agriculture and industry of CMM fundamentally.

  18. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  19. Report on the joint meeting of the Division of Development and Technology Plasma/Wall Interaction and High Heat Flux Materials and Components Task Groups

    International Nuclear Information System (INIS)

    Wilson, K.L.

    1985-10-01

    This report of the Joint Meeting of the Division of Development and Technology Plasma/Wall Interaction and High Heat Flux Materials and Components Task Groups contains contributing papers in the following areas: Plasma/Materials Interaction Program and Technical Assessment, High Heat Flux Materials and Components Program and Technical Assessment, Pumped Limiters, Ignition Devices, Program Planning Activities, Compact High Power Density Reactor Requirements, Steady State Tokamaks, and Tritium Plasma Experiments. All these areas involve the consideration of High Heat Flux on Materials and the Interaction of the Plasma with the First Wall. Many of the Test Facilities are described as well

  20. Understanding the interface between silicon-based materials and water: Molecular-dynamics exploration of infrared spectra

    Directory of Open Access Journals (Sweden)

    José A. Martinez-Gonzalez

    2017-11-01

    Full Text Available Molecular-dynamics simulations for silicon, hydrogen- and hydroxyl-terminated silicon in contact with liquid water, at 220 and 300 K, display water-density ‘ordering’ along the laboratory z-axis, emphasising the hydrophobicity of the different systems and the position of this first adsorbed layer. Density of states (DOS of the oxygen and proton velocity correlation functions (VACFs and infrared (IR spectra of the first monolayer of adsorbed water, calculated via Fourier transformation, indicate similarities to more confined, ice-like dynamical behaviour (redolent of ice. It was observed that good qualitative agreement is obtained between the DOS for this first layer in all systems. The DOS for the lower-frequency zone indicates that for the interface studied (i.e., the first layer near the surface, the water molecules try to organise in a similar form, and that this form is intermediate between liquid water and ice. For IR spectra, scrutiny of the position of the highest-intensity peaks for the stretching and bending bands indicate that such water molecules in the first solvating layer are organised in an intermediate fashion between ice and liquid water.

  1. Oak Ridge Health Studies Phase 1 report, Volume 2: Part D, Dose Reconstruction Feasibility Study. Tasks 6, Hazard summaries for important materials at the Oak Ridge Reservation

    Energy Technology Data Exchange (ETDEWEB)

    Bruce, G.M.; Walker, L.B.; Widner, T.E.

    1993-09-01

    The purpose of Task 6 of Oak Ridge Phase I Health Studies is to provide summaries of current knowledge of toxic and hazardous properties of materials that are important for the Oak Ridge Reservation. The information gathered in the course of Task 6 investigations will support the task of focussing any future health studies efforts on those operations and emissions which have likely been most significant in terms of off-site health risk. The information gathered in Task 6 efforts will likely also be of value to individuals evaluating the feasibility of additional health,study efforts (such as epidemiological investigations) in the Oak Ridge area and as a resource for citizens seeking information on historical emissions.

  2. Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers of the Workshop, 9-11 August 1999, Breckenridge, Colorado

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B.L.; Gee, J.; Kalejs, J.; Saitoh, R.; Stavola, M.; Swanson, D.; Tan, T.; Weber, E.; Werner, J.

    2000-08-04

    Since 1997, the PV sales have exceeded 100 MW/yr with > 85% of the production coming from silicon photovoltaics (Si-PV). As the PV demands increase in the new millennium, there will be a host of challenges to Si-PV. The challenges will arise in developing strategies for cost reduction, increased production, higher throughput per manufacturing line, new sources of low-cost Si, and introduction of new manufacturing processes for cell fabrication. At the same time, newer thin-film technologies, based on CdTe and CIS, will come on board posing new competition. With these challenges come new opportunities for the Si-PV-to detach itself from the microelectronics industry, to embark on an aggressive program in thin-film Si solar cells, and to try new approaches to process monitoring. The 9th Workshop on Crystalline Silicon Solar Cell Materials and Processes addressed these issues in a number of sessions. In addition to covering the usual topics of impurity gettering, defects, passivation, and solar cell processing, there were sessions on poly feedstock, mechanical properties of Si, metallization, and process monitoring.

  3. Characterization of Czochralski Silicon Detectors

    OpenAIRE

    Luukka, Panja-Riina; Haerkoenen, Jaakko

    2012-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

  4. Role of chlorine in the nanocrystalline silicon film formation by rf plasma-enhanced chemical vapor deposition of chlorinated materials

    International Nuclear Information System (INIS)

    Shirai, Hajime

    2004-01-01

    We demonstrate the disorder-induced low-temperature crystallization in the nanocrystalline silicon film growth by rf plasma-enhanced chemical vapor deposition of H 2 -diluted SiH 2 Cl 2 and SiCl 4 . The combination of the chemical reactivity of SiCld (d: dangling bond) and SiHCl complexes and the release of the disorder-induced stress near the growing surface tightly correlate with the phase transitionity of SiCld and SiHCl complexes near the growing surface with the aid of atomic hydrogen, which induce higher degree of disorder in the a-Si network. These features are most prominent in the SiCl 4 compared with those of SiH 2 Cl 2 and SiH 4 , which preferentially enhance the nanocrystalline Si formation

  5. Flat-plate solar array project process development area: Process research of non-CZ silicon material

    Science.gov (United States)

    Campbell, R. B.

    1986-01-01

    Several different techniques to simultaneously diffuse the front and back junctions in dendritic web silicon were investigated. A successful simultaneous diffusion reduces the cost of the solar cell by reducing the number of processing steps, the amount of capital equipment, and the labor cost. The three techniques studied were: (1) simultaneous diffusion at standard temperatures and times using a tube type diffusion furnace or a belt furnace; (2) diffusion using excimer laser drive-in; and (3) simultaneous diffusion at high temperature and short times using a pulse of high intensity light as the heat source. The use of an excimer laser and high temperature short time diffusion experiment were both more successful than the diffusion at standard temperature and times. The three techniques are described in detail and a cost analysis of the more successful techniques is provided.

  6. Analysis of the surface technology of silicon detectors for imaging of low-energy beta tracers in biological material

    CERN Document Server

    Tykva, R

    2000-01-01

    Using silicon surface barrier detectors, the counting sensitivity of low-energy beta tracers is considerably influenced by surface technology applied in detector manufacturing. Original diagnostic procedure, using a mixture of uranium fission products, is described to trace the behaviors of different admixtures as in the etching bath as in the water used during development of the detector surface. In combination with some other described analyses, the detectors produced with the developed surface control are used in a PC - controlled scanning equipment reaching at room temperature an FWHM of 3.4 keV for sup 2 sup 4 sup 1 Am. Such detectors make it possible to image distribution, of e.g., sup 3 H, sup 1 sup 2 sup 5 I, sup 3 H+ sup 1 sup 4 C and other beta tracer combinations applied in life and environmental sciences.

  7. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  8. Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

    International Nuclear Information System (INIS)

    Tiwari Pramod Kumar; Saramekala Gopi Krishna; Mukhopadhyay Anand Kumar; Dubey Sarvesh

    2014-01-01

    The present work gives some insight into the subthreshold behaviour of short-channel double-material-gate strained-silicon on silicon—germanium MOSFETs in terms of subthreshold swing and off-current. The formulation of subthreshold current and, thereupon, the subthreshold swing have been done by exploiting the expression of potential distribution in the channel region of the device. The dependence of the subthreshold characteristics on the device parameters, such as Ge mole fraction, gate length ratio, work function of control gate metal and gate length, has been tested in detail. The analytical models have been validated by the numerical simulation results that were obtained from the device simulation software ATLAS™ by Silvaco Inc. (semiconductor devices)

  9. Research and development of photovoltaic power system. Study on structural defects in silicon-based amorphous materials; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kei zairyo no kozo kekkan ni kansuru kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, T [Kanazawa University, Ishikawa (Japan). Faculty of Engineering

    1994-12-01

    Described herein are the results of the FY1994 research program for structural defects of silicon-based amorphous materials for solar cells. The study on light generation defects of the a-Si:H system and rejuvenation process by annealing establishes the effects of light irradiation time on changed neutral dangling bond density as a result of light irradiation at varying temperature of 77K, room temperature and 393K. The study on annealing to rejuvenate light generation defects of various types of a-Si-H systems establishes the activation energy distribution with respect to annealing to remove light-induced defects, showing that hydrogen affects the distribution of light-induced defects. The study on decaying process of light-induced ESR for undoped and N-doped a-Si:H systems observes the decaying process of light-induced ESR, after light is cut off, extending for a period of several seconds to several hours at 77K for the a-Si-H systems containing N in a range from 0 to 12at%. The other results presented are space distribution of neutral defects of light-irradiated a-Si-H systems, and rejuvenation process of light-induced spin for the a-Si(1-x)N(x):H composition. 6 figs.

  10. Magnetically retained silicone facial prosthesis

    African Journals Online (AJOL)

    2013-06-09

    Jun 9, 2013 ... Prosthetic camouflaging of facial defects and use of silicone maxillofacial material are the alternatives to the surgical retreatment. Silicone elastomers provide more options to clinician for customization of the facial prosthesis which is simple, esthetically good when coupled with bio magnets for retention.

  11. A novel and facile strategy for highly flame retardant polymer foam composite materials: Transforming silicone resin coating into silica self-extinguishing layer.

    Science.gov (United States)

    Wu, Qian; Zhang, Qian; Zhao, Li; Li, Shi-Neng; Wu, Lian-Bin; Jiang, Jian-Xiong; Tang, Long-Cheng

    2017-08-15

    In this study, a novel strategy was developed to fabricate highly flame retardant polymer foam composite materials coated by synthesized silicone resin (SiR) polymer via a facile dip-coating processing. Applying the SiR polymer coating, the mechanical property and thermal stability of SiR-coated polymer foam (PSiR) composites are greatly enhanced without significantly altering their structure and morphology. The minimum oxygen concentration to support the combustion of foam materials is greatly increased, i.e. from LOI 14.6% for pure foam to LOI 26-29% for the PSiR composites studied. Especially, adjusting pendant group to SiOSi group ratio (R/Si ratio) of SiRs produces highly flame retardant PSiR composites with low smoke toxicity. Cone calorimetry results demonstrate that 44-68% reduction in the peak heat release rate for the PSiR composites containing different R/Si ratios over pure foam is achieved by the presence of appropriate SiR coating. Digital and SEM images of post-burn chars indicate that the SiR polymer coating can be transformed into silica self-extinguishing porous layer as effective inorganic barrier effect, thus preserving the polymer foam structure from fire. Our results show that the SiR dip-coating technique is a promising strategy for producing flame retardant polymer foam composite materials with improved mechanical properties. Copyright © 2017 Elsevier B.V. All rights reserved.

  12. Preparation and characterization of hybrid materials of epoxy resin type bisphenol a with silicon and titanium oxides by sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo C, A.; Osuna A, J. G., E-mail: acc.carrillo@gmail.com [Universidad Autonoma de Coahuila, Facultad de Ciencias Quimicas, Blvd. Venustiano Carranza y Jose Cardenas Valdes, 25000 Saltillo, Coahuila (Mexico)

    2011-07-01

    Hybrid materials were synthesized from epoxy resins as a result bisphenol type A-silicon oxide and epoxy resin bisphenol type A-titanium oxide were obtained. The synthesis was done by sol-gel process using tetraethyl orthosilicate (Teos) and titanium isopropoxide (I Ti) as inorganic precursors. The molar ratio of bisphenol A to the inorganic precursors was the studied variable. The materials were characterized by thermal analysis, infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The hybrid nature of the materials was demonstrated through thermal analysis and infrared spectroscopy. In both systems, as the amount of alkoxide increased, the bands described above were more defined. This behavior indicates the interactions between the resin and the alkoxides. Hybrids with Teos showed a smoother and homogeneous surface in its entirety, without irregularities. Hybrids with titanium isopropoxide had low roughness. Both Teos and I Ti hybrids showed a decrease on the atomic weight percentage of carbon due to a slight reduction of the organic part on the surface. (Author)

  13. Preparation and characterization of hybrid materials of epoxy resin type bisphenol a with silicon and titanium oxides by sol-gel process

    International Nuclear Information System (INIS)

    Carrillo C, A.; Osuna A, J. G.

    2011-01-01

    Hybrid materials were synthesized from epoxy resins as a result bisphenol type A-silicon oxide and epoxy resin bisphenol type A-titanium oxide were obtained. The synthesis was done by sol-gel process using tetraethyl orthosilicate (Teos) and titanium isopropoxide (I Ti) as inorganic precursors. The molar ratio of bisphenol A to the inorganic precursors was the studied variable. The materials were characterized by thermal analysis, infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The hybrid nature of the materials was demonstrated through thermal analysis and infrared spectroscopy. In both systems, as the amount of alkoxide increased, the bands described above were more defined. This behavior indicates the interactions between the resin and the alkoxides. Hybrids with Teos showed a smoother and homogeneous surface in its entirety, without irregularities. Hybrids with titanium isopropoxide had low roughness. Both Teos and I Ti hybrids showed a decrease on the atomic weight percentage of carbon due to a slight reduction of the organic part on the surface. (Author)

  14. Performance Study of Acoustophoretic Microfluidic Silicon-Glass Devices by Characterization of Material- and Geometry-Dependent Frequency Spectra

    DEFF Research Database (Denmark)

    Garofalo, Fabio; Laurell, Thomas; Bruus, Henrik

    2017-01-01

    of the hard-to-measure mechanical indicators is correlated to that of the easy-to-measure electrical indicators, and, by introducing optimality criteria, it is clarified to which extent the latter suffices to identify optimal driving frequencies as the geometric configuration and the material parameters vary....... The latter have been varied by considering both Pyrex and aluminium nitroxide top-lid materials....

  15. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  16. Surface Detail Reproduction and Effect of Disinfectant and Long-Term Storage on the Dimensional Stability of a Novel Vinyl Polyether Silicone Impression Material.

    Science.gov (United States)

    Nassar, Usama; Chow, Ava K

    2015-08-01

    This study investigated the surface detail reproduction and dimensional stability of a vinyl polyether silicone (VPES) in comparison to a vinylpolysiloxane (VPS) material as a function of prolonged storage for up to 2 weeks. Heavy-body VPES (EXA'lence(TM) Fast Set) and VPS (Imprint(TM) 3 Quick Step) were compared. Forty impression ingots of each material were made using a stainless steel die as described by ANSI/ADA specification No. 19. Twenty impressions of each material were disinfected by immersion in a 2.5% buffered glutaraldehyde solution. Surface quality was assessed and scored immediately after making the ingots. Dimensional stability measurements were made immediately and repeated on the same ingots after 7 and 14 days storage in ambient laboratory conditions. Data were analyzed using the D'Agostino and Pearson omnibus normality test followed by two-way repeated measures ANOVA with post hoc Bonferroni tests. Values of p < 0.01 were deemed to be significant. Disinfected VPES and VPS specimens had significantly reduced dimensional changes at 7 and 14 days when compared with the nondisinfected ones (p < 0.0001). The dimensional stability of both materials was within ANSI/ADA specification No. 19's acceptable limit throughout the 2-week test period, regardless of whether they were disinfected. Out of the initial 80 ingots, 8 VPES and 1 VPS ingot scored a 2 on the surface detail test, while the remaining 71 ingots scored 1. Heavy-body fast-set VPES experienced minimal contraction in vitro after prolonged storage, though surface detail scores were not as consistent as those of the VPS tested. The least contraction occurred when the material was examined immediately after ingot production. © 2014 by the American College of Prosthodontists.

  17. Subwavelength silicon photonics

    International Nuclear Information System (INIS)

    Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

    2011-01-01

    With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

  18. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  19. Report on the joint meeting of the Division of Development and Technology Plasma Wall Interaction and High Heat Flux Materials and Components task groups

    International Nuclear Information System (INIS)

    Nygren, R.E.

    1992-04-01

    The Plasma/Wall Interaction and High Heat Flux Materials and Components Task Groups typically hold a joint meeting each year to provide a forum for discussion of technical issues of current interest as well as an opportunity for program reviews by the Department of Energy (DOE). At the meeting in September 1990, reported here, research programs in support of the International Thermonuclear Experimental Reactor (ITER) were highlighted. The first part of the meeting was devoted to research and development (R ampersand D) for ITER on plasma facing components plus introductory presentations on some current projects and design studies. The balance of the meeting was devoted to program reviews, which included presentations by most of the participants in the Small Business Innovative Research (SBIR) Programs with activities related to plasma wall interactions. The Task Groups on Plasma/Wall Interaction and on High Heat Flux Materials and Components were chartered as continuing working groups by the Division of Development and Technology in DOE's Magnetic Fusion Program. This report is an addition to the series of ''blue cover'' reports on the Joint Meetings of the Plasma/Wall Interaction and High Heat Flux Materials and Components Task Groups. Among several preceding meetings were those in October 1989 and January 1988

  20. Understanding Task-in-Process through the Lens of Laughter: Activity Designs, Instructional Materials, Learner Orientations, and Interpersonal Relationships

    Science.gov (United States)

    Hasegawa, Atsushi

    2018-01-01

    Using the framework of conversation analysis, this study investigated the interactional workings of laughter in task-based interactions. The analysis was drawn from 160 cases of pair work interactions, collected in 2nd-semester Japanese-as-a-foreign-language classrooms. The pair work activities examined in this study are mostly grammar-focused,…

  1. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija

    2012-01-01

    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  2. Controlled Release of Plectasin NZ2114 from a Hybrid Silicone-Hydrogel Material for Inhibition of Staphylococcus aureus Biofilm

    DEFF Research Database (Denmark)

    Klein, Kasper; Grønnemose, Rasmus Birkholm; Alm, Martin

    2017-01-01

    this system with plectasin derivate NZ2114 in an attempt to design an S. aureus biofilm-resistant catheter. The material demonstrated promising antibiofilm properties, including properties against methicillin-resistant S. aureus, thus suggesting a novel application of this antimicrobial peptide....

  3. Characterization of dielectric materials in thin layers for the development of S.O.I. (Silicon on Insulator) substrates

    International Nuclear Information System (INIS)

    Gruber, Olivier

    1999-01-01

    This thesis deals with the characterization of oxide layer placed inside S.O.I. substrates and submitted to irradiation. This type of material is used for the development of hardened electronic components, that is to say components able to be used in a radiative environment. The irradiation induces charges (electrons or holes) in the recovered oxide. A part of these charges is trapped which leads to changes of the characteristics of the electronic components made on these substrates. The main topic of this study is the characterization of trapping properties of recovered oxides and more particularly of 'Unibond' material carried out with a new fabrication process: the 'smart-cut' process. This work is divided into three parts: - study with one carrier: this case is limited to low radiation doses where is only observed holes trapping. The evolution of the physical and chemical properties of the 'Unibond' material recovered oxide has been revealed, this evolution being due to the fabrication process. - Study with two carriers: in this case, there is trapping of holes and electrons. This type of trapping is observed in the case of strong radiation doses. A new type of electrons traps has been identified with the 'Unibond' material oxide. The transport and the trapping of holes and electrons have been studied in the case of transient phenomena created by short radiative pulses. This study has been carried out using a new measurement method. - Study with three carriers: here are added to holes and electrons the protons introduced in the recovered oxide by the annealing under hydrogen. These protons are movable when they are submitted to the effect of an electric field and they induce a memory effect according to their position in the oxide. These different works show that the 'Unibond' material is a very good solution for the future development of S.O.I. (author) [fr

  4. Plasma processing of microcrystalline silicon films : filling in the gaps

    NARCIS (Netherlands)

    Bronneberg, A.C.

    2012-01-01

    Hydrogenated microcrystalline silicon (µc-Si:H) is a mixed-phase material consisting of crystalline silicon grains, hydrogenated amorphous silicon (a-Si:H) tissue, and voids. Microcrystalline silicon is extensively used as absorber layer in thin-film tandem solar cells, combining the advantages of a

  5. Experimental study on the use of spacer foils in two-step putty and wash impression procedures using silicone impression materials.

    Science.gov (United States)

    Mann, Karsten; Davids, Andreas; Range, Ursula; Richter, Gert; Boening, Klaus; Reitemeier, Bernd

    2015-04-01

    The 2-step putty and wash impression technique is commonly used in fixed prosthodontics. However, cutting sluiceways to allow the light-body material to drain is time-consuming. A solution might be the use of a spacer foil. The purpose of this study was to evaluate the influence of spacer foil on the margin reproduction and dimensional accuracy of 2-step putty and wash impressions. Two methods of creating space for the wash material in a 2-step putty and wash impression were compared: the traditional cutout technique and a spacer foil. Eleven commercially available combinations of silicone impression materials were included in the study. The impressions and the cast production were carried out under standardized conditions. All casts were measured with a 3-dimensional (3D) coordinate measuring machine. Preparation margin reproduction and the diameters and spacing of the stone cast dies were measured (α=.05). The 2 methods showed significant differences (P<.05) in the reproduction of the preparation margins (complete reproduction cutout, 90% to 98%; foil, 74% to 91%). The use of a foil resulted in greater dimensional accuracy of the cast dies compared to the cutout technique. Cast dies from the cutout technique were significantly smaller than the metallic original cast (cutout median, 4.55 mm to 4.61 mm; foil median, 4.61 to 4.64). Spacing between the dies revealed only a few additional significant differences between the techniques. When spacer foils were used, dies were obtained that better corresponded to the original tooth. Copyright © 2015 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

  6. A Set of English Instructional Materials Using Task-Based Learning for News Production Management Study Program in STMM “MMMTC” Yogyakarta

    Directory of Open Access Journals (Sweden)

    Geovanna Gistha Wicita

    2016-12-01

    Full Text Available The News Production Management Study Program (NPMSP in STMM “MMTC” Yogyakarta is a study program that has an English subject in the third semester. Due to the lack of time and materials for the students, English, which they will use a lot in journalism, becomes their barrier in learning. Therefore, this research attempted to develop a set of English instructional materials using task-based learning for the third semester students of the NPMSP STMM “MMTC” Yogyakarta. This research aimed to answer how the materials are developed and what the materials look like. To gather the information, the researcher adopted Borg & Gall’s (1986 Research and Development (R&D method which was combined with Kemp’s instructional design model (1977 covering eight flexible steps. Due to time and financial constraints, only five steps of R&D were conducted in designing the materials. To gather the information, the researcher conducted some interviews. After designing the materials, the interview was conducted. The interview results showed that the designed materials were good, appropriate, and applicable. Nine suggestions were obtained to revise the materials which covered the level of difficulty of the text, the content of the exercises, the overview of the learning materials, teaching media, lesson plans, instructions, layout, and material implementation. The materials consist of six units. Each unit contains five sessions, namely “What’s Up?”, “Entering the Newsroom”, “Journalists’ Project”, “Entering the News Editor Room”, and “Lesson Learned”.   DOI: https://doi.org/10.24071/llt.2015.180107

  7. Porous silicon carbide (SIC) semiconductor device

    Science.gov (United States)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  8. Silicon Alloying On Aluminium Based Alloy Surface

    International Nuclear Information System (INIS)

    Suryanto

    2002-01-01

    Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

  9. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

  10. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  11. Cryogenic plasma-processed silicon microspikes as a high-performance anode material for lithium ion-batteries

    Science.gov (United States)

    Sakai, Joe; Luais, Erwann; Wolfman, Jérôme; Tillocher, Thomas; Dussart, Rémi; Tran-Van, Francois; Ghamouss, Fouad

    2017-10-01

    Micro- or nano-structuring is essential in order to use Si as an anode material for lithium ion batteries. In the present study, we attempted to use Si wafers with a spiky microstructure (SMS), the so-called black-Si, prepared by a cryogenic reactive ion etching process with an SF6/O2 gas mixture, for Li half-cells. The SMS with various sizes of spikes from 2.0 μm (height) × 0.2 μm (width) to 21 μm × 1.0 μm was etched by varying the SF6/O2 gas flow ratio. An anode of SMS of 11 μm-height in average showed stable charge/discharge capacity and Coulombic efficiency higher than 99% for more than 300 cycles, causing no destruction to any part of the Si wafer. The spiky structure turned columnar after cycles, suggesting graded lithiation levels along the length. The present results suggest a strategy to utilize a wafer-based Si material for an anode of a lithium ion battery durable against repetitive lithiation/delithiation cycles.

  12. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    Jansen, R; Sharma, S; Dash, S P; Min, B C

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  13. Material Science

    Energy Technology Data Exchange (ETDEWEB)

    Won, Dong Yeon; Kim, Heung

    1987-08-15

    This book introduces material science, which includes key of a high-tech industry, new materials of dream like new metal material and semiconductor, classification of materials, microstructure of materials and characteristic. It mentions magic new materials such as shape memory alloy, fine ceramics, engineering fine ceramics, electronic ceramics, engineering plastic, glass, silicone conductor, optical fiber mixed materials and integrated circuit, challenge for new material and development of new materials.

  14. Material Science

    International Nuclear Information System (INIS)

    Won, Dong Yeon; Kim, Heung

    1987-08-01

    This book introduces material science, which includes key of a high-tech industry, new materials of dream like new metal material and semiconductor, classification of materials, microstructure of materials and characteristic. It mentions magic new materials such as shape memory alloy, fine ceramics, engineering fine ceramics, electronic ceramics, engineering plastic, glass, silicone conductor, optical fiber mixed materials and integrated circuit, challenge for new material and development of new materials.

  15. Hybrid Integrated Platforms for Silicon Photonics

    Science.gov (United States)

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  16. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  17. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  18. Photonic integration and photonics-electronics convergence on silicon platform

    CERN Document Server

    Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

    2015-01-01

    Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

  19. Tasks for development of SiC/SiC composites as structural material in a fusion reactor

    International Nuclear Information System (INIS)

    Yamada, Reiji

    1997-01-01

    SiC/SiC composites are chosen for a structural material of blankets in DREAM Reactor that has been proposed as a power reactor by JAERI. The main requirements and the target values in the DREAM conceptual design were described, and compared to available experimental data. (author)

  20. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    Science.gov (United States)

    Agosto, William N.

    1993-01-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  1. Characterization of Czochralski silicon detectors

    OpenAIRE

    Luukka, Panja-Riina

    2006-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

  2. Scattering characteristics from porous silicon

    Directory of Open Access Journals (Sweden)

    R. Sabet-Dariani

    2000-12-01

    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  3. Preliminary field tests of near-real-time materials accountancy system at the Tokai Reprocessing Plant (TASK F)

    International Nuclear Information System (INIS)

    Tsutsumi, Masayori; Sawahata, Toshio; Sugiyama, Toshihide; Tanaka, Kazuhiko; Suyama, Naohiro

    1982-01-01

    A study of applying the proposed near-real-time material accountancy model to the Tokai Reprocessing Plant, PNC (Power Reactor and Nuclear Fuel Development Corp.), showed that the model was feasible and effective to meet the IAEA (International Atomic Energy Agency) safeguards criteria in terms of detection timeliness and sensitivity. This study using the computer simulation technique is shown in this paper. In order to investigate the applicability of the model to the actual plant, the field test was carried out on the process in the material balance area (MBA) which covers the area from the input accountability vessel (IAV) to the product accountability vessel (PAV), in cooperation with JAERI. The key measuring points for dynamic physical inventory counts (D-PIT) are shown. The results of test evaluation are as follows: For timely detection, it will be able to evaluate an abnoumal accountancy in process by using the MUFd (material unaccounted for) obtained by the D-PIT about once every week. Therefore, this seems to satisfy the timely detection of IAEA safeguards criteria. As for detection, sensitivity and verification procedures, in order to clarify these criteria for a large scale reprocessing plant, further research and development will be required. In addition, since the field test was carried out along with normal plant operation, additional man-power problem was also considered. (Wakatsuki, Y.)

  4. Energy material transport, now through 2000, system characteristics and potential problems. Task 3. Final report - petroleum transportation

    Energy Technology Data Exchange (ETDEWEB)

    DeSteese, J.G.

    1979-03-01

    This report contains a summary characterization of the petroleum transportation system and an assessment of some potential problems that may impact petroleum transportation in the United States during the balance of the century. A primary purpose of this task is to provide information and perspective that contribute to the evaluation of research and development needs and priorities in future programs. The system characterization in Section 3 includes a review of petroleum product movements, modal operations and comparisons, and transportation regulations and safety. This system overview summarizes domestic production and consumption scenarios to the year 2000. A median scenario based on published projections shows that the US will probably rely on foreign oil to supply between 40 and 50 percent of domestic petroleum needs throughout the balance of the century. Potential problems in petroleum transportation were identified by the analysis and prioritization of current issues. The relative priorities of problem concerns were judged on the basis of their overall impact on the system and the immediacy of this potential impact. Two classes of concern are distinguished: 1. Potential problems that appear to require new programmatic action, in addition to effort already committed, to minimize the possible future impact of these concerns. 2. Latent concerns that may increase or decrease in priority or entirely change in nature as they develop. While the trend of these concerns should be monitored, new program action does not appear necessary at this time.

  5. Fiscal 1997 project on the R and D of industrial scientific technology under consignment from NEDO. Report on the results of the R and D of silicon-based polymeric materials (development of liquid methane fueled aircraft engine); 1997 nendo sangyo kagaku gijutsu kenkyu kaihatsu jigyo / Shin energy Sangyo gijutsu Sogo Kaihatsu Kiko itaku. Keisokei kobunshi zairyo no kenkyu kaihatsu (methane nenryo kokukiyo engine kaihatsu) seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    This R and D aims at establishing the basic technology on the molecular design, synthesis, use as materials, and evaluation of silicon-based polymers, of which excellent electronic/optical functions, high heat-resistance/combustion-resistance/dynamic characteristic are expected. The paper introduced the results of the fiscal 1997 R and D of them. The themes are as follows: technology of synthesis of silicon-based polymeric materials with sea-island microstructures, interstitial type structure forming technology, composite materials with organometallic complexes and silicon-based polymers, silicon-based polymer structural materials with ring structures, optimization of the Wurtz`s synthesis method of silicon-based polymers, unsaturated and hypercoordinate organosilicic compounds, function of silicon-based polymers, synthesis and polymerization of new silicon-based monomers, development of a new synthesis method of polysilane and the function, development of new application of silicon-based polymers in imaging devices for recording/memory/display of information, molecular design of {pi}-conjugate and {sigma}-conjugate compounds including silicon, and conformation and electronic state of silicon-based polymeric materials. 186 refs., 141 figs., 68 tabs.

  6. Tin - an unlikely ally for silicon field effect transistors?

    KAUST Repository

    Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo T.; Schwingenschlö gl, Udo; Hussain, Muhammad Mustafa

    2014-01-01

    We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows

  7. Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

    International Nuclear Information System (INIS)

    Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

    2000-01-01

    In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

  8. Quarterly Technical Progress Report of Radioisotope Power System Materials Production and Technology Program tasks for January 2000 through March 2000

    International Nuclear Information System (INIS)

    Moore, J.P.

    2000-01-01

    The Office of Space and Defense Power Systems (OSDPS) of the Department of Energy (DOE) provides radioisotope Power Systems (BPS) for applications where conventional power systems are not feasible. For example, radioisotope thermoelectric generators were supplied by the DOE to the National Aeronautics and Space Administration for deep space missions including the Cassini Mission launched in October of .I 997 to study the planet Saturn. The Oak Ridge National Laboratory (ORNL) has been involved in developing materials and technology and producing components for the DOE for more than three decades. For the Cassini Mission, for example, ORNL was involved in the production of carbon-bonded carbon fiber (CBCF) insulator sets, iridium alloy blanks and foil, and clad vent sets (CVSs) and weld shields (WSs). This quarterly report has been divided into three sections to reflect program guidance from OSDPS for fiscal year (FY) 2000. The first section deals primarily with maintenance of the capability to produce flight quality carbon-bonded carbon fiber (CBCF) insulator sets, iridium alloy blanks and foil, clad vent sets (CVSs), and weld shields (WSs). In all three cases, production maintenance is assured by the manufacture of limited quantities of flight quality (FQ) components. The second section deals with several technology activities to improve the manufacturing processes, characterize materials, or to develop technologies for two new RPS. The last section is dedicated to studies of the potential for the production of 238Pu at OBNL

  9. Electrometallurgy of Silicon

    Science.gov (United States)

    1988-01-01

    wind, plants, and water impounded in elevated reservoirs. Photovoltaic or solar cells, which convert sunlight directly to electricity, belongs tc, the...on record is that of St. Claire DeVille, who claimed that silicon was produced by electrolysing an impure melt of NaAlC14, but his material did not...this composition and purified melts were electrolysed at about 14500C in graphite crucible and using graphite electrodes. Applied potentials were

  10. Liquid Silicon Pouch Anode

    Science.gov (United States)

    2017-09-06

    Number 15/696,426 Filing Date 6 September 2017 Inventor Charles J. Patrissi et al Address any questions concerning this matter to the...silicon-based anodes during cycling, lithium insertion and deinsertion. Mitigation of this problem has long been sought and will result in improved...design shown. [0032] It will be understood that many additional changes in the details, materials, steps and arrangement of parts, which have been

  11. Hydrogenated amorphous silicon coatings may modulate gingival cell response

    Science.gov (United States)

    Mussano, F.; Genova, T.; Laurenti, M.; Munaron, L.; Pirri, C. F.; Rivolo, P.; Carossa, S.; Mandracci, P.

    2018-04-01

    Silicon-based materials present a high potential for dental implant applications, since silicon has been proven necessary for the correct bone formation in animals and humans. Notably, the addition of silicon is effective to enhance the bioactivity of hydroxyapatite and other biomaterials. The present work aims to expand the knowledge of the role exerted by hydrogen in the biological interaction of silicon-based materials, comparing two hydrogenated amorphous silicon coatings, with different hydrogen content, as means to enhance soft tissue cell adhesion. To accomplish this task, the films were produced by plasma enhanced chemical vapor deposition (PECVD) on titanium substrates and their surface composition and hydrogen content were analyzed by means of X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectrophotometry (FTIR) respectively. The surface energy and roughness were measured through optical contact angle analysis (OCA) and high-resolution mechanical profilometry respectively. Coated surfaces showed a slightly lower roughness, compared to bare titanium samples, regardless of the hydrogen content. The early cell responses of human keratinocytes and fibroblasts were tested on the above mentioned surface modifications, in terms of cell adhesion, viability and morphometrical assessment. Films with lower hydrogen content were endowed with a surface energy comparable to the titanium surfaces. Films with higher hydrogen incorporation displayed a lower surface oxidation and a considerably lower surface energy, compared to the less hydrogenated samples. As regards mean cell area and focal adhesion density, both a-Si coatings influenced fibroblasts, but had no significant effects on keratinocytes. On the contrary, hydrogen-rich films increased manifolds the adhesion and viability of keratinocytes, but not of fibroblasts, suggesting a selective biological effect on these cells.

  12. Special purpose materials: an assessment of needs and the role of these materials in the national program

    International Nuclear Information System (INIS)

    Gold, R.E.; Clinard, F.W. Jr.; Davis, J.W.

    1978-01-01

    The scope of activities of the Task Group on Special Purpose Materials includes those materials requirements not specifically addressed by the other OFE materials task groups. These materials can be organized according to seven broad materials applications or functions which appear to be generic to all magnetically confined fusion reactor concepts. These are breeding materials, coolants, materials for tritium service, graphite and silicon carbide, electrical insulators and ceramics, heat-sink materials, and magnet materials. The present paper describes the importance of each of these areas of materials technology, outlines major problems or areas of uncertainty, and reviews past and current contributions to our state of understanding as it may relate to fusion power applications

  13. Development of low cost silicon solar cells by reusing the silicon saw dust collected during wafering process

    International Nuclear Information System (INIS)

    Zaidi, Z.I.; Raza, B.; Ahmed, M.; Sheikh, H.; Qazi, I.A.

    2002-01-01

    Silicon material due to its abundance in nature and maximum conversion efficiency has been successfully being used for the fabrication of electronic and photovoltaic devices such as ICs, diodes, transistors and solar cells. The 80% of the semiconductor industry is ruled by silicon material. Single crystal silicon solar cells are in use for both space and terrestrial application, due to the well developed technology and better efficiency than polycrystalline and amorphous silicon solar cells. The current research work is an attempt to reduce the cost of single crystal silicon solar cells by reusing the silicon saw dust obtained during the watering process. During the watering process about 45% Si material is wasted in the form of Si powder dust. Various waste powder silicon samples were analyzed using inductively Coupled Plasma (ICP) technique, for metallic impurities critical for solar grade silicon material. The results were evaluated from impurity and cost point of view. (author)

  14. Resolution of the reactor vessel materials toughness safety issue; Task Action Plan A-11; Appendices C-K

    International Nuclear Information System (INIS)

    Johnson, R.E.

    1981-09-01

    The central problem in the Unresolved Safety Issue A-11, 'Reactor Vessel Materials Toughness,' was to provide guidance in performing analyses for reactor pressure vessels (RPVs) which fail to meet the toughness requirements during service life as a result of neutron radiation embrittlement. A technical team of recognized experts was organized to assist the NRC staff in addressing the problem. Using the foundation of the tearing modulus concept, which has been developed under earlier NRC sponsorship, relationships were obtained which provided approximate solutions to the RPV fracture problem with assumed beltline region flaws. Volume I of this report is a brief presentation of the problem and the results; Volume II provides the detailed technical foundations

  15. 10th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers from the Workshop, Copper Mountain Resort; August 14-16, 2000

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B.L.; Gee, J.; Kalejs, J.; Saitoh, R.; Stavola, M.; Swanson, D.; Tan, T.; Weber, E.; Werner, J.

    2000-08-11

    The 10th Workshop provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and non-photovoltaic fields. Discussions included the various aspects of impurities and defects in silicon-their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. Sessions and panel discussions also reviewed thin-film crystalline-silicon PV, advanced cell structures, new processes and process characterization techniques, and future manufacturing requirements to meet the ambitious expansion goals described in the recently released US PV Industry Roadmap. The Workshop also provided an excellent opportunity for researchers in private industry and at universities to recognize a mutual need for future collaborative research. The three-day workshop consisted of presentations by invited speakers, followed by discussion sessions. In addition, there was two poster sessions presenting the latest research and development results. The subjects discussed included: solar cell processing, light-induced degradation, gettering and passivation, crystalline silicon growth, thin-film silicon solar cells, and impurities and defects. Two special sessions featured at this workshop: advanced metallization and interconnections, and characterization methods.

  16. Next generation structural silicone glazing

    Directory of Open Access Journals (Sweden)

    Charles D. Clift

    2015-06-01

    Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

  17. Detector materials: germanium and silicon

    International Nuclear Information System (INIS)

    Haller, E.E.

    1981-11-01

    This article is a summary of a short course lecture given in conjunction with the 1981 Nuclear Science Symposium. The basic physical properties of elemental semiconductors are reviewed. The interaction of energetic radiation with matter is discussed in order to develop a feeling for the appropriate semiconductor detector dimensions. The extremely low net dopant concentrations which are required are derived directly from the detector dimensions. A survey of the more recent techniques which have been developed for the analysis of detector grade semiconductor single crystals is presented

  18. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  19. Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

    Institute of Scientific and Technical Information of China (English)

    LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

    2004-01-01

    The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

  20. Resolution of the Task A-11 reactor-vessel materials-toughness safety issue. Appendices C-K

    International Nuclear Information System (INIS)

    1982-10-01

    The central problem in the unresolved safety issue A-11, Reactor Vessel Materials Toughness, was to provide guidance in performing analyses required by 10 CFR Part 50, Appendix G, Section V.C. for reactor pressure vessels (RPVs) which fail to meet the toughness requirement during service life as a result of neutron radiation embrittlement. Although the methods of linear-elastic fracture mechanics (LEFM) were adequate for low-temperature RPV problems, they were inapplicable under operating conditions because vessel steels, even those which exhibit less than 50 ft-lb of C/sub v/ energy, were relatively tough at temperatures where the impact energy reached its upper shelf values. A technical team of recognized experts was organized to assist the NRC staff in addressing the problem. Using the foundation of the tearing modulus concept, which had been developed under earlier NRC sponsorship, relationships were obtained which provided approximate solutions to the problem of RPV fracture with assumed beltline region flaws. The first paper of this report is a summary of the problem, the solutions, and the results of verification analyses. The details are provided in a series of appendices in Volumes I and II

  1. Potential Applications of Friction Stir Welding to the Hydrogen Economy. Hydrogen Regional Infrastructure Program In Pennsylvania, Materials Task

    Energy Technology Data Exchange (ETDEWEB)

    Brendlinger, Jennifer [Concurrent Technologies Corporation, Johnstown, PA (United States)

    2009-07-17

    Friction Stir Welding (FSW) is a solid-state welding technique developed by The Welding Institute (TWI) of Cambridge, UK in the early 1990’s. The process uses a non-consumable rotating tool to develop frictional heat and plastically deform workpieces to be joined, resulting in a solid-state weld on the trailing side of the advancing tool. Since the materials to be joined are not melted, FSW results in a finer grain structure and therefore enhanced properties, relative to fusion welds. And unlike fusion welding, a relatively small number of key process parameters exist for FSW: tool rotational speed, linear weld velocity and force perpendicular to the joining surface. FSW is more energy efficient than fusion welding and can be accomplished in one or two passes, versus many more passes required of fusion welding thicker workpieces. Reduced post-weld workpiece distortion is another factor that helps to reduce the cost of FSW relative to fusion welding. Two primary areas have been identified for potential impact on the hydrogen economy: FSW of metallic pipes for hydrogen transmission and FSW of aluminum pressure vessels for hydrogen storage. Both areas have been under active development and are explored in this paper.

  2. Silicon wafers for integrated circuit process

    OpenAIRE

    Leroy , B.

    1986-01-01

    Silicon as a substrate material will continue to dominate the market of integrated circuits for many years. We first review how crystal pulling procedures impact the quality of silicon. We then investigate how thermal treatments affect the behaviour of oxygen and carbon, and how, as a result, the quality of silicon wafers evolves. Gettering techniques are then presented. We conclude by detailing the requirements that wafers must satisfy at the incoming inspection.

  3. Numerical Simulation Of Silicon-Ribbon Growth

    Science.gov (United States)

    Woda, Ben K.; Kuo, Chin-Po; Utku, Senol; Ray, Sujit Kumar

    1987-01-01

    Mathematical model includes nonlinear effects. In development simulates growth of silicon ribbon from melt. Takes account of entire temperature and stress history of ribbon. Numerical simulations performed with new model helps in search for temperature distribution, pulling speed, and other conditions favoring growth of wide, flat, relatively defect-free silicon ribbons for solar photovoltaic cells at economically attractive, high production rates. Also applicable to materials other than silicon.

  4. Fiscal 1993 R and D project for industrial science and technology. Report on results in developing methane-fueled aircraft engine (R and D on silicon-based polymeric material); 1993 nendo methane nenryo kokukiyo engine kaihatsu seika hokokusho. Keisokei kobunshi zairyo no gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-03-01

    R and D was conducted on silicon-based polymeric materials for structural use, for the purpose of establishing fundamental technologies such as molecular design, synthesis, material forming and evaluation method concerning silicon-based polymers, with the fiscal 1993 results summarized. In the studies of synthesis technologies of silicon-based polymeric materials having a sea-island structure, a series of polymers with an Si-C main chain structure were prepared by ring-opening polymerization of the cyclic monomers. In the studies of interpenetrating polymer network (IPN) structure forming technologies, polycarbosilanes with superior thermal stability and solvent solubility were synthesized through structural control based on molecular design. In the studies of composite structural materials between organic metallic complex and silicon-based high polymer, the compounding was carried out by introducing or blending organic metallic complex into the main chain of silicon polymer, with evaluation made on the heat resistance. The studies of silicon polymer structural materials having a ring structure were conducted on high heat resistant polymers that were obtained by dehydrocoupling polymerization with magnesia as a catalyst. (NEDO)

  5. Modification of silicon nitride and silicon carbide surfaces for food and biosensor applications

    NARCIS (Netherlands)

    Rosso, M.

    2009-01-01

    Silicon-rich silicon nitride (SixN4, x > 3) is a robust insulating material widely used for the coating of microdevices: its high chemical and mechanical inertness make it a material of choice for the reinforcement of fragile microstructures (e.g. suspended microcantilevers, micro-fabricated

  6. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  7. Silicon Nanocrystal Synthesis in Microplasma Reactor

    Science.gov (United States)

    Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

    Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

  8. Synthesis of Silicon Nanocrystals in Microplasma Reactor

    Science.gov (United States)

    Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

    Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

  9. 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Extended Abstracts and Papers, 19-22 August 2001, Estes Park, Colorado

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B.

    2001-08-16

    The 11th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and non-photovoltaic fields. Discussions will include the various aspects of impurities and defects in silicon--their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. Sessions and panel discussions will review impurities and defects in crystalline-silicon PV, advanced cell structures, new processes and process characterization techniques, and future manufacturing demands. The workshop will emphasize some of the promising new technologies in Si solar cell fabrication that can lower PV energy costs and meet the throughput demands of the future. The three-day workshop will consist of presentations by invited speakers, followed by discussion sessions. Topics to be discussed are: Si Mechanical properties and Wafer Handling, Advanced Topics in PV Fundamentals, Gettering and Passivation, Impurities and Defects, Advanced Emitters, Crystalline Silicon Growth, and Solar Cell Processing. The workshop will also include presentations by NREL subcontractors who will review the highlights of their research during the current subcontract period. In addition, there will be two poster sessions presenting the latest research and development results. Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV.

  10. A new view of microcrystalline silicon: The role of plasma processing in achieving a dense and stable absorber material for photovoltaic applicationsv

    Czech Academy of Sciences Publication Activity Database

    Bugnon, G.; Parascandolo, G.; Söderström, T.; Cuony, P.; Despeisse, M.; Hänni, S.; Holovský, Jakub; Meillaud, F.; Ballif, C.

    2012-01-01

    Roč. 22, č. 17 (2012), s. 3665-3671 ISSN 1616-301X Institutional research plan: CEZ:AV0Z10100521 Keywords : solar cell * microcrystalline silicon * nanoporous Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 9.765, year: 2012 http://onlinelibrary.wiley.com/doi/10.1002/adfm.201200299/pdf

  11. Undepleted silicon detectors

    International Nuclear Information System (INIS)

    Rancoita, P.G.; Seidman, A.

    1985-01-01

    Large-size silicon detectors employing relatively low resistivity material can be used in electromagnetic calorimetry. They can operate in strong magnetic fields, under geometric constraints and with microstrip detectors a high resolution can be achieved. Low noise large capacitance oriented electronics was developed to enable good signal-to-noise ratio for single relativistic particles traversing large area detectors. In undepleted silicon detectors, the charge migration from the field-free region has been investigated by comparing the expected peak position (from the depleted layer only) of the energy-loss of relativistic electrons with the measured one. Furthermore, the undepleted detectors have been employed in a prototype of Si/W electromagnetic colorimeter. The sensitive layer was found to be systematically larger than the depleted one

  12. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

    2014-11-15

    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Production of silicon carbide bodies

    International Nuclear Information System (INIS)

    Parkinson, K.

    1981-01-01

    A body consisting essentially of a coherent mixture of silicon carbide and carbon for subsequent siliconising is produced by casting a slip comprising silicon carbide and carbon powders in a porous mould. Part of the surface of the body, particularly internal features, is formed by providing within the mould a core of a material which retains its shape while casting is in progress but is compressed by shrinkage of the cast body as it dries and is thereafter removable from the cast body. Materials which are suitable for the core are expanded polystyrene and gelatinous products of selected low elastic modulus. (author)

  14. Case Report: Magnetically retained silicone facial prosthesis ...

    African Journals Online (AJOL)

    Prosthetic camouflaging of facial defects and use of silicone maxillofacial material are the alternatives to the surgical retreatment. Silicone elastomers provide more options to clinician for customization of the facial prosthesis which is simple, esthetically good when coupled with bio magnets for retention. Key words: Magnet ...

  15. Silicon photonics for telecommunications and biomedicine

    CERN Document Server

    Fathpour, Sasan

    2011-01-01

    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  16. Hydrogen passivation of silicon sheet solar cells

    International Nuclear Information System (INIS)

    Tsuo, Y.S.; Milstein, J.B.

    1984-01-01

    Significant improvements in the efficiencies of dendritic web and edge-supported-pulling silicon sheet solar cells have been obtained after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. The silicon sputter rate for constant ion beam flux of 0.60 +- 0.05 mA/cm 2 exhibits a maximum at approximately 1400-eV ion beam energy

  17. Rectangular-cladding silicon slot waveguide with improved nonlinear performance

    Science.gov (United States)

    Huang, Zengzhi; Huang, Qingzhong; Wang, Yi; Xia, Jinsong

    2018-04-01

    Silicon slot waveguides have great potential in hybrid silicon integration to realize nonlinear optical applications. We propose a rectangular-cladding hybrid silicon slot waveguide. Simulation result shows that, with a rectangular-cladding, the slot waveguide can be formed by narrower silicon strips, so the two-photon absorption (TPA) loss in silicon is decreased. When the cladding material is a nonlinear polymer, the calculated TPA figure of merit (FOMTPA) is 4.4, close to the value of bulk nonlinear polymer of 5.0. This value confirms the good nonlinear performance of rectangular-cladding silicon slot waveguides.

  18. Production of technical silicon and silicon carbide from rice-husk

    Directory of Open Access Journals (Sweden)

    A. Z. Issagulov

    2014-10-01

    Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

  19. Battery, especially for portable devices, has an anode containing silicon

    NARCIS (Netherlands)

    Kan, S.Y.

    2002-01-01

    The anode (2) contains silicon. A battery with a silicon-containing anode is claimed. An Independent claim is also included for a method used to make the battery, comprising the doping of a silicon substrate (1) with charge capacity-increasing material (preferably boron, phosphorous or arsenic),

  20. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  1. Low cost silicon-on-ceramic photovoltaic solar cells

    Science.gov (United States)

    Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

    1980-01-01

    A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

  2. Achievement report for fiscal 1997. Technological development for practical application of a solar energy power generation system /development of technology to manufacture solar cells/development of technology to manufacture thin film solar cells (development of technology to manufacture materials and substrates (development of technology to manufacture silicon crystal based high-quality materials and substrates)); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyo denchi seizo gijutsu kaihatsu, usumaku taiyo denchi seizo gijutsu kaihatsu, zairyo kiban seizo gijutsu kaihatsu (silicon kesshokei kohinshitsu zairyo kiban no seizo gujutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    It is intended to develop thin film solar cells capable of mass production with high photo-stability and at low cost. Thus, the objective of the present research is to analyze the growth process of micro crystal silicon based thin films, the crystal being a high quality silicon crystal based material, and develop technology to manufacture high-quality micro crystal silicon thin films based on the findings therefrom. It was found that, when silicon source is available in cathode, pure hydrogen plasma forms micro crystal silicon films by using the plasma as a result of the chemical transportation effect from the silicon source. It was revealed that the crystal formation due to hydrogen plasma exposure is performed substantially by the crystals forming the films due to the chemical transportation effect, rather than crystallization in the vicinity of the surface. The crystal formation under this experiment was concluded that the formation takes place during film growth accompanied by diffusion of film forming precursors on the surface on which the film grows. According to the result obtained so far, the most important issue in the future is particularly the control of crystal growing azimuth by reducing the initially formed amorphous layer by controlling the stress in the initial phase for film formation, and by controlling the film forming precursors. (NEDO)

  3. Measurements of Silicon Detector Thermal Runaway

    CERN Document Server

    Heusch, C A; Moser, H G

    1999-01-01

    We measured thermal runaway properties of previously irradiated silicon detectors cooled by TPG bars. We simulated their expected behaviour to measure the energy gap in the detector material and to test the validity of various underlying assumptions.

  4. Porous silicon technology for integrated microsystems

    Science.gov (United States)

    Wallner, Jin Zheng

    With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

  5. Relative importance of expertise, lifting height and weight lifted on posture and lumbar external loading during a transfer task in manual material handling.

    Science.gov (United States)

    Plamondon, André; Larivière, Christian; Delisle, Alain; Denis, Denys; Gagnon, Denis

    2012-01-01

    The objective of this study was to measure the effect size of three important factors in manual material handling, namely expertise, lifting height and weight lifted. The effect of expertise was evaluated by contrasting 15 expert and 15 novice handlers, the effect of the weight lifted with a 15-kg box and a 23-kg box and the effect of lifting height with two different box heights: ground level and a 32 cm height. The task consisted of transferring a series of boxes from a conveyor to a hand trolley. Lifting height and weight lifted had more effect size than expertise on external back loading variables (moments) while expertise had low impact. On the other hand, expertise showed a significant effect of posture variables on the lumbar spine and knees. All three factors are important, but for a reduction of external back loading, the focus should be on the lifting height and weight lifted. The objective was to measure the effect size of three important factors in a transfer of boxes from a conveyor to a hand trolley. Lifting height and weight lifted had more effect size than expertise on external back loading variables but expertise was a major determinant in back posture.

  6. Lamb wave propagation in monocrystalline silicon wafers

    OpenAIRE

    Fromme, P.; Pizzolato, M.; Robyr, J-L; Masserey, B.

    2018-01-01

    Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. Guided ultrasonic waves offer the potential to efficiently detect micro-cracks in the thin wafers. Previous studies of ultrasonic wave propagation in silicon focused on effects of material anisotropy on bulk ultrasonic waves, but the dependence of the wave propagation characteristics on the material anisotropy is not well understood for Lamb waves. The phase slowness a...

  7. Tailored synthesis of monodispersed nano/submicron porous silicon oxycarbide (SiOC) spheres with improved Li-storage performance as an anode material for Li-ion batteries

    Science.gov (United States)

    Shi, Huimin; Yuan, Anbao; Xu, Jiaqiang

    2017-10-01

    A spherical silicon oxycarbide (SiOC) material (monodispersed nano/submicron porous SiOC spheres) is successfully synthesized via a specially designed synthetic strategy involving pyrolysis of phenyltriethoxysilane derived pre-ceramic polymer spheres at 900 °C. In order to prevent sintering of the pre-ceramic polymer spheres upon heating, a given amount of hollow porous SiO2 nanobelts which are separately prepared from tetraethyl orthosilicate with CuO nanobelts as templates are introduced into the pre-ceramic polymer spheres before pyrolysis. This material is investigated as an anode for lithium-ion batteries in comparison with the large-size bulk SiOC material synthesized under the similar conditions but without hollow SiO2 nanobelts. The maximum reversible specific capacity of ca. 900 mAh g-1 is delivered at the current density of 100 mA g-1 and ca. 98% of the initial capacity is remained after 100 cycles at 100 mA g-1 for the SiOC spheres material, which are much superior to the bulk SiOC material. The improved lithium storage performance in terms of specific capacity and cyclability is attributed to its particular morphology of monodisperse nano/submicron porous spheres as well as its modified composition and microstructure. This SiOC material has higher Li-storage activity and better stability against volume expansion during repeated lithiation and delithiation cycling.

  8. Materialism.

    Science.gov (United States)

    Melnyk, Andrew

    2012-05-01

    Materialism is nearly universally assumed by cognitive scientists. Intuitively, materialism says that a person's mental states are nothing over and above his or her material states, while dualism denies this. Philosophers have introduced concepts (e.g., realization and supervenience) to assist in formulating the theses of materialism and dualism with more precision, and distinguished among importantly different versions of each view (e.g., eliminative materialism, substance dualism, and emergentism). They have also clarified the logic of arguments that use empirical findings to support materialism. Finally, they have devised various objections to materialism, objections that therefore serve also as arguments for dualism. These objections typically center around two features of mental states that materialism has had trouble in accommodating. The first feature is intentionality, the property of representing, or being about, objects, properties, and states of affairs external to the mental states. The second feature is phenomenal consciousness, the property possessed by many mental states of there being something it is like for the subject of the mental state to be in that mental state. WIREs Cogn Sci 2012, 3:281-292. doi: 10.1002/wcs.1174 For further resources related to this article, please visit the WIREs website. Copyright © 2012 John Wiley & Sons, Ltd.

  9. Development of advanced solid state radiation detectors: mercuric iodide and high gain silicon avalanche structures. Annual progress report, December 1, 1984-November 30, 1985

    International Nuclear Information System (INIS)

    Huth, G.C.; Dabrowski, A.J.

    1986-04-01

    This report covers the period from December 1984 through November 1985 for this research project sponsored by the Office of Health and Environmental Research of the Dept. of Energy. This work has two primary research objectives. The first is continuing development of the material mercuric iodide (HgI 2 ) and its applications to energy dispersive x-ray analysis and gamma ray spectrometry. The second task involves investigation of silicon ''avalanche'' (internal electron gain) radiation detector structures fabricated from new neutron transmutation doped (NTD) silicon single crystal

  10. Colloidal characterization of silicon nitride and silicon carbide

    Science.gov (United States)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  11. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

  12. Radiation damage in silicon detectors

    CERN Document Server

    Lindström, G

    2003-01-01

    Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

  13. High yield silicon carbide prepolymers

    International Nuclear Information System (INIS)

    Baney, R.H.

    1982-01-01

    Prepolymers which exhibit good handling properties, and are useful for preparing ceramics, silicon carbide ceramic materials and articles containing silicon carbide, are polysilanes consisting of 0 to 60 mole% (CH 3 ) 2 Si units and 40 to 100 mole% CH 3 Si units, all Si valences being satisfied by CH 3 groups, other Si atoms, or by H atoms, the latter amounting to 0.3 to 2.1 weight% of the polysilane. They are prepared by reducing the corresponding chloro- or bromo-polysilanes with at least the stoichiometric amount of a reducing agent, e.g. LiAlH 4 . (author)

  14. Thermal simulations of the new design for the BELLE silicon vertex detector

    International Nuclear Information System (INIS)

    Dragic, J.

    2000-01-01

    Full text: The experienced imperfections of the BELLE silicon vertex detector, SVD1 motioned the design of a new detector, SVD2, which targets on improving the main weaknesses encountered in the old design. In this report we focus on tile thermal aspects of the SVD2 ladder, whereby sufficient cooling of the detector is necessary in order to minimise the detector leakage currents. It is estimated that reducing the temperature of the silicon detector from 25 deg C to 15 deg C would result in a 50% reduction in leak current. Further, cooling the detector would help minimize mechanical stresses from the thermal cycling. Our task is to ensure that the heat generated by the readout chips is conducted down the SVD hybrid unit effectively, such that the chip and the hybrid temperature does not overbear the SVD silicon sensor temperature. We considered the performance of two materials to act as a heat spreading plate which is glued between the two hybrids in order to improve the heat conductivity of the hybrid unit, namely Copper and Thermal Pyrolytic Graphite (TPG). The effects of other ladder components were also considered in order to enhance the cooling of the silicon detectors. Finite element analysis with ANSYS software was used to simulate the thermal conditions of the SVD2 hybrid unit, in accordance with the baseline design for the mechanical structure of the ladder. It was found that Cu was a preferred material as it achieved equivalent silicon sensor cooling (3.6 deg C above cooling point), while its mechanical properties rendered it a lot more practical. Suppressing, the thermal path via a rib support block, by increasing its thermal resistivity, as well as increasing thermal conductivity of the ribs in the hybrid region, were deemed essential in the effective cooling of the silicon sensors

  15. Performance Enhancement of Silicon Alloy-Based Anodes Using Thermally Treated Poly(amide imide) as a Polymer Binder for High Performance Lithium-Ion Batteries.

    Science.gov (United States)

    Yang, Hwi Soo; Kim, Sang-Hyung; Kannan, Aravindaraj G; Kim, Seon Kyung; Park, Cheolho; Kim, Dong-Won

    2016-04-05

    The development of silicon-based anodes with high capacity and good cycling stability for next-generation lithium-ion batteries is a very challenging task due to the large volume changes in the electrodes during repeated cycling, which results in capacity fading. In this work, we synthesized silicon alloy as an active anode material, which was composed of silicon nanoparticles embedded in Cu-Al-Fe matrix phases. Poly(amide imide)s, (PAI)s, with different thermal treatments were used as polymer binders in the silicon alloy-based electrodes. A systematic study demonstrated that the thermal treatment of the silicon alloy electrodes at high temperature made the electrodes mechanically strong and remarkably enhanced the cycling stability compared to electrodes without thermal treatment. The silicon alloy electrode thermally treated at 400 °C initially delivered a discharge capacity of 1084 mAh g(-1) with good capacity retention and high Coulombic efficiency. This superior cycling performance was attributed to the strong adhesion of the PAI binder resulting from enhanced secondary interactions, which maintained good electrical contacts between the active materials, electronic conductors, and current collector during cycling. These findings are supported by results from X-ray photoelectron spectroscopy, scanning electron microscopy, and a surface and interfacial cutting analysis system.

  16. Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

    NARCIS (Netherlands)

    Lambertz, A.

    2015-01-01

    The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced

  17. Method of fabricating porous silicon carbide (SiC)

    Science.gov (United States)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1995-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  18. HRTEM analysis of the nanostructure of porous silicon

    International Nuclear Information System (INIS)

    Martin-Palma, R.J.; Pascual, L.; Landa-Canovas, A.R.; Herrero, P.; Martinez-Duart, J.M.

    2006-01-01

    The nanometric structure of porous silicon makes this material to be very suitable for its use in many different fields, including optoelectronics and biological applications. In the present work, the structure of porous silicon was investigated in detail by means of cross-sectional high-resolution transmission electron microscopy and digital image processing, together with electron energy loss spectroscopy. The structure of the Si/porous silicon interface and that of the silicon nanocrystals that compose porous silicon have been analyzed in detail. A strong strain contrast in the Si/porous silicon interface caused by high stresses was observed. Accordingly, dislocation pairs are found to be a possible mechanism of lattice matching between porous silicon and the Si substrate. Finally, high relative concentration of oxygen in the porous silicon layer was observed, together with low relative electron concentration in the conduction band when compared to Si

  19. A study of luminescence from silicon-rich silica fabricated by plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Trwoga, P.F.

    1998-01-01

    Silicon is the most studied electronic material known to man and dominates the electronics industry in its use as a semiconductors for nearly all integrated electronics. However, optoelectronics is almost entirely based on III-V materials. This technology is used because silicon is a very inefficient light source, whereas the III-V band structure can lend itself to efficient light emission by electron injection. However, due to the overwhelming dominance of silicon based electronics it is still a highly desirable goal to generate light efficiently from silicon based materials. Recently, studies have demonstrated that efficient visible luminescence can be obtained from certain novel forms of silicon. These materials include porous silicon, hydrogenated amorphous silicon, and silicon-rich silica (SiO x x x is studied in detail; in addition, electroluminescence and rare-earth doping of silicon-rich silica is also addressed. (author)

  20. 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers, August 11-14, 2002, Breckenridge, Colorado

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2002-08-01

    The 12th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. Discussions will include various aspects of impurities and defects in silicon-their properties, the dynamics during processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. The workshop will emphasize some of the promising new technologies in Si solar cell fabrication that can lower PV energy costs and meet the production demands of the future. It will also provide an excellent opportunity for researchers, in private industry and at universities, to prioritize mutual needs for future collaborative research. Sessions and panel discussions will review recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and manufacturing approaches suitable for future manufacturing demands . Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV. The three-day workshop will consist of presentations by invited speakers, followed by discussion sessions. In addition, there will be two poster sessions presenting the latest research and development results.

  1. Silicon carbide modified carbon materials. Formation of nanocrystalline SiC from thermochemical processes in the system coal tar pitch/poly(carbosilane)

    Energy Technology Data Exchange (ETDEWEB)

    Czosnek, C.; Janik, J.F.; Olejniczak, Z. [Stanislaw Staszic University of Mining & Meterology, AGH, Krakow (Poland)

    2002-12-01

    Poly(carbosilane) or PCS, (-CH{sub 2}-SiH(CH{sub 3})-){sub n}, is used as a Si-bearing precursor in combination with a coal tar pitch to study thermally induced transformations toward SiC-modified carbon composites. Following mixing of the components in the molten pitch at 160{sup o}C, the mixture is heated under argon atmosphere at 500{sup o}C yielding a solid carbonizate that is further subjected to separate pyrolysis experiments at 1300{sup o}C or 1650{sup o}C. At temperatures up to 500{sup o}C, the PCS reacts with suitable pitch components as well as undergoing decomposition reactions. At higher temperatures, clusters of prevailingly nanocrystalline beta-SiC are confirmed after the 1650{sup o}C pyrolysis step with indications that the formation of the compound starts at 1300{sup o}C. Si-29 MAS NMR, XRD, FT-IR, XPS, and elemental analysis are used to characterize each pyrolysis step, especially, from the viewpoint of transformation of silicon species to silicon carbide in the carbon matrix evolved from the pitch.

  2. Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

    Science.gov (United States)

    Singh, M.; Behrendt, D. R.

    1992-01-01

    Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

  3. Solution growth of microcrystalline silicon on amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Heimburger, Robert

    2010-07-05

    This work deals with low-temperature solution growth of micro-crystalline silicon on glass. The task is motivated by the application in low-cost solar cells. As glass is an amorphous material, conventional epitaxy is not applicable. Therefore, growth is conducted in a two-step process. The first step aims at the spatial arrangement of silicon seed crystals on conductive coated glass substrates, which is realized by means of vapor-liquid-solid processing using indium as the solvent. Seed crystals are afterwards enlarged by applying a specially developed steady-state solution growth apparatus. This laboratory prototype mainly consists of a vertical stack of a silicon feeding source and the solvent (indium). The growth substrate can be dipped into the solution from the top. The system can be heated to a temperature below the softening point of the utilized glass substrate. A temperature gradient between feeding source and growth substrate promotes both, supersaturation and material transport by solvent convection. This setup offers advantages over conventional liquid phase epitaxy at low temperatures in terms of achievable layer thickness and required growth times. The need for convective solute transport to gain the desired thickness of at least 50 {mu}m is emphasized by equilibrium calculations in the binary system indium-silicon. Material transport and supersaturation conditions inside the utilized solution growth crucible are analyzed. It results that the solute can be transported from the lower feeding source to the growth substrate by applying an appropriate heating regime. These findings are interpreted by means of a hydrodynamic analysis of fluid flow and supporting FEM simulation. To ensure thermodynamic stability of all materials involved during steady-state solution growth, the ternary phase equilibrium between molybdenum, indium and silicon at 600 C was considered. Based on the obtained results, the use of molybdenum disilicide as conductive coating

  4. Implantation damage in silicon devices

    International Nuclear Information System (INIS)

    Nicholas, K.H.

    1977-01-01

    Ion implantation, is an attractive technique for producing doped layers in silicon devices but the implantation process involves disruption of the lattice and defects are formed, which can degrade device properties. Methods of minimizing such damage are discussed and direct comparisons made between implantation and diffusion techniques in terms of defects in the final devices and the electrical performance of the devices. Defects are produced in the silicon lattice during implantation but they are annealed to form secondary defects even at room temperature. The annealing can be at a low temperature ( 0 C) when migration of defects in silicon in generally small, or at high temperature when they can grow well beyond the implanted region. The defect structures can be complicated by impurity atoms knocked into the silicon from surface layers by the implantation. Defects can also be produced within layers on top of the silicon and these can be very important in device fabrication. In addition to affecting the electrical properties of the final device, defects produced during fabrication may influence the chemical properties of the materials. The use of these properties to improve devices are discussed as well as the degradation they can cause. (author)

  5. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  6. Doping of silicon by carbon during laser ablation process

    Science.gov (United States)

    Raciukaitis, G.; Brikas, M.; Kazlauskiene, V.; Miskinis, J.

    2007-04-01

    Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser power or UV radiation. Carbon ions created bonds with silicon in the depth of silicon. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion was performed to clarify its depth profile in silicon. Photo-chemical reactions of such type changed the structure of material and could be a reason for the reduced quality of machining. A controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

  7. Doping of silicon by carbon during laser ablation process

    International Nuclear Information System (INIS)

    Raciukaitis, G; Brikas, M; Kazlauskiene, V; Miskinis, J

    2007-01-01

    Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser power or UV radiation. Carbon ions created bonds with silicon in the depth of silicon. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion was performed to clarify its depth profile in silicon. Photo-chemical reactions of such type changed the structure of material and could be a reason for the reduced quality of machining. A controlled atmosphere was applied to prevent carbonization of silicon during laser cutting

  8. Silicon crystal growth using a liquid-feeding Czochralski method

    Science.gov (United States)

    Shiraishi, Yutaka; Kurosaka, Shoei; Imai, Masato

    1996-09-01

    Silicon single crystals with uniformity along the growth direction were grown using a new continuous Czochralski (CCZ) method. Polycrystalline silicon rods used as charge materials are melted by carbon heaters over a crucible without contact between the raw material and other substances. Using this method, silicon crystals with diameters as large as 6 or 8 inch and good uniformity along the growth direction were grown.

  9. Materials

    CSIR Research Space (South Africa)

    Van Wyk, Llewellyn V

    2009-02-01

    Full Text Available . It is generally included as part of a structurally insulated panel (SIP) where the foam is sandwiched between external skins of steel, wood or cement. Cement composites Cement bonded composites are an important class of building materials. These products... for their stone buildings, including the Egyptians, Aztecs and Inca’s. As stone is a very dense material it requires intensive heating to become warm. Rocks were generally stacked dry but mud, and later cement, can be used as a mortar to hold the rocks...

  10. Silicon Carbide Power Devices and Integrated Circuits

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan; Samsel, Isaak; LaBel, Ken; Chen, Yuan; Ikpe, Stanley; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

    2017-01-01

    An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.

  11. The impact of silicon feedstock on the PV module cost

    NARCIS (Netherlands)

    del Coso, G.; del Cañizo, C.; Sinke, W.C.

    2010-01-01

    The impact of the use of new (solar grade) silicon feedstock materials on the manufacturing cost of wafer-based crystalline silicon photovoltaic modules is analyzed considering effects of material cost, efficiency of utilisation, and quality. Calculations based on data provided by European industry

  12. The importance of silicon photovoltaic manufacturing in Saudi Arabia

    International Nuclear Information System (INIS)

    Elani, U.A.; Bagazi, S.A.

    1998-01-01

    In this paper, the potential of silicon development for photovoltaics will be discussed in conjunction with the availability of raw material and photovoltaic demand in Saudi Arabia. Recent studies suggest that silicon raw material for photovoltaic production should be considered for further investigation towards solar cells manufacturing in Saudi Arabia. (author)

  13. Doping of silicon with carbon during laser ablation process

    Science.gov (United States)

    Račiukaitis, G.; Brikas, M.; Kazlauskienė, V.; Miškinis, J.

    2006-12-01

    The effect of laser ablation on properties of remaining material in silicon was investigated. It was found that laser cutting of wafers in the air induced the doping of silicon with carbon. The effect was more distinct when using higher laser power or UV radiation. Carbon ions created bonds with silicon atoms in the depth of the material. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion to clarify its depth profile in silicon was performed. Photochemical reactions of such type changed the structure of material and could be the reason of the reduced machining quality. The controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

  14. Advanced Measurements of Silicon Carbide Ceramic Matrix Composites

    Energy Technology Data Exchange (ETDEWEB)

    Farhad Farzbod; Stephen J. Reese; Zilong Hua; Marat Khafizov; David H. Hurley

    2012-08-01

    Silicon carbide (SiC) is being considered as a fuel cladding material for accident tolerant fuel under the Light Water Reactor Sustainability (LWRS) Program sponsored by the Nuclear Energy Division of the Department of Energy. Silicon carbide has many potential advantages over traditional zirconium based cladding systems. These include high melting point, low susceptibility to corrosion, and low degradation of mechanical properties under neutron irradiation. In addition, ceramic matrix composites (CMCs) made from SiC have high mechanical toughness enabling these materials to withstand thermal and mechanical shock loading. However, many of the fundamental mechanical and thermal properties of SiC CMCs depend strongly on the fabrication process. As a result, extrapolating current materials science databases for these materials to nuclear applications is not possible. The “Advanced Measurements” work package under the LWRS fuels pathway is tasked with the development of measurement techniques that can characterize fundamental thermal and mechanical properties of SiC CMCs. An emphasis is being placed on development of characterization tools that can used for examination of fresh as well as irradiated samples. The work discuss in this report can be divided into two broad categories. The first involves the development of laser ultrasonic techniques to measure the elastic and yield properties and the second involves the development of laser-based techniques to measurement thermal transport properties. Emphasis has been placed on understanding the anisotropic and heterogeneous nature of SiC CMCs in regards to thermal and mechanical properties. The material properties characterized within this work package will be used as validation of advanced materials physics models of SiC CMCs developed under the LWRS fuels pathway. In addition, it is envisioned that similar measurement techniques can be used to provide process control and quality assurance as well as measurement of

  15. Neuromorphic photonic networks using silicon photonic weight banks.

    Science.gov (United States)

    Tait, Alexander N; de Lima, Thomas Ferreira; Zhou, Ellen; Wu, Allie X; Nahmias, Mitchell A; Shastri, Bhavin J; Prucnal, Paul R

    2017-08-07

    Photonic systems for high-performance information processing have attracted renewed interest. Neuromorphic silicon photonics has the potential to integrate processing functions that vastly exceed the capabilities of electronics. We report first observations of a recurrent silicon photonic neural network, in which connections are configured by microring weight banks. A mathematical isomorphism between the silicon photonic circuit and a continuous neural network model is demonstrated through dynamical bifurcation analysis. Exploiting this isomorphism, a simulated 24-node silicon photonic neural network is programmed using "neural compiler" to solve a differential system emulation task. A 294-fold acceleration against a conventional benchmark is predicted. We also propose and derive power consumption analysis for modulator-class neurons that, as opposed to laser-class neurons, are compatible with silicon photonic platforms. At increased scale, Neuromorphic silicon photonics could access new regimes of ultrafast information processing for radio, control, and scientific computing.

  16. From silicon to organic nanoparticle memory devices.

    Science.gov (United States)

    Tsoukalas, D

    2009-10-28

    After introducing the operational principle of nanoparticle memory devices, their current status in silicon technology is briefly presented in this work. The discussion then focuses on hybrid technologies, where silicon and organic materials have been combined together in a nanoparticle memory device, and finally concludes with the recent development of organic nanoparticle memories. The review is focused on the nanoparticle memory concept as an extension of the current flash memory device. Organic nanoparticle memories are at a very early stage of research and have not yet found applications. When this happens, it is expected that they will not directly compete with mature silicon technology but will find their own areas of application.

  17. Calcinosis Cutis Long after Rhinoplasty with Silicone

    Directory of Open Access Journals (Sweden)

    Yuki Honda

    2014-12-01

    Full Text Available Rhinoplasty is a plastic surgery procedure to reconstruct the nose. Silicone alloplastic materials are most widely used as implants for rhinoplasty, but calcification on the surface occurs with long-term usage. Herein, we report a case of gruel-like calcification approximately 50 years after silicone implant rhinoplasty. In this case, calcification on the silicone surface might have transformed into gruel-like deposits, which presented as a subcutaneous mass at the dorsal area of the nose. The precise mechanism is unclear; a pH change in the tissue might have occurred during the process of inflammation, leading to the dissolution of calcified deposits.

  18. Oxygen measurements in thin ribbon silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hyland, S L; Ast, D G; Baghdadi, A

    1987-03-01

    The oxygen content of thin silicon ribbons grown by the dendritic web technique was measured using a modification of the ASTM method based on Fourier transform infrared spectroscopy. Web silicon was found to have a high oxygen content, ranging from 13 to 19 ppma, calculated from the absorption peak associated with interstitial oxygen and using the new ASTM conversion coefficient. The oxygen concentration changed by about 10% along the growth direction of the ribbon. In some samples, a shoulder was detected on the absorption peak. A similar shoulder in Czochralski grown material has been variously interpreted in the literature as due to a complex of silicon, oxygen, and vacancies, or to a phase of SiO/sub 2/ developed along dislocations in the material. In the case of web silicon, it is not clear which is the correct interpretation.

  19. Laser wafering for silicon solar

    International Nuclear Information System (INIS)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-01-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W p (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs (∼20%), embodied energy, and green-house gas GHG emissions (∼50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 (micro)m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  20. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  1. A review of oxide, silicon nitride, and silicon carbide brazing

    International Nuclear Information System (INIS)

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

  2. Application of scanning Kelvin probe microscopy for the electrical characterization of microcrystalline silicon for photovoltaics

    International Nuclear Information System (INIS)

    Breymesser, A.

    2000-05-01

    In the last years microcrystalline silicon thin films have attracted great attention as a new photovoltaic material. With this material it is possible to combine simple and cheap low temperature deposition techniques known from amorphous silicon with the long-term stability of the photovoltaic performance like in bulk crystalline silicon solar cells. The critical point is the deposition procedure with numerous tunable parameters influencing the quality and character of the produced diode structures. Additionally there is a great uncertainty about unintentionally incorporated defects, which is not affected by the deposition parameters. Extended investigation of the material, diode and solar cell characteristics is essential in order to correlate the impact of deposition conditions with the quality of the devices. The situation is complicated due to the anisotropic and inhomogeneous character of microcrystalline silicon. Scanning Kelvin probe microscopy (SKPM) is a work function measurement method based on a scanning force microscope (SFM) and a modified Kelvin probe technique. Due to the excellent lateral resolution of the SFM work function measurements with resolutions far below the micrometer level can be carried out. Applied on doped microcrystalline silicon structures it is possible to visualize the position of the Fermi level within the band gap and the influence of the deposition conditions on it. Within this work a SKPM based on a commercially available SFM was constructed and built. Great effort was concentrated on the characterization of the SKPM experiment. On the basis of an extended knowledge about the performance investigations concentrated on cross sections of microcrystalline silicon diode structures produced by hot-wire chemical vapor deposition (HW-CVD). A pin structure for the diodes was chosen due to the low diffusion lengths within this rather defective material. The evolution of the built-in electric drift field within the intrinsic absorber is

  3. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

    2016-07-04

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  4. Dislocation dynamics of web type silicon ribbon

    Energy Technology Data Exchange (ETDEWEB)

    Dillon, Jr, O W; Tsai, C T; DeAngelis, R J

    1987-03-01

    Silicon ribbon grown by the dendritic web process passes through a rapidly changing thermal profile in the growth direction. This rapidly changing profile induces stresses which produce changes in the dislocation density in the ribbon. A viscoplastic material response function (Haasen-Sumino model) is used herein to calculate the stresses and the dislocation density at each point in the silicon ribbon. The residual stresses are also calculated.

  5. Revised activation estimates for silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States); Cheng, E.T.; Mann, F.M.

    1996-10-01

    Recent progress in nuclear data development for fusion energy systems includes a reevaluation of neutron activation cross sections for silicon and aluminum. Activation calculations using the newly compiled Fusion Evaluated Nuclear Data Library result in calculated levels of {sup 26}Al in irradiated silicon that are about an order of magnitude lower than the earlier calculated values. Thus, according to the latest internationally accepted nuclear data, SiC is much more attractive as a low activation material, even in first wall applications.

  6. The new silicon strip detectors for the CMS tracker upgrade

    International Nuclear Information System (INIS)

    Dragicevic, M.

    2010-01-01

    The first introductory part of the thesis describes the concept of the CMS experiment. The tasks of the various detector systems and their technical implementations in CMS are explained. To facilitate the understanding of the basic principles of silicon strip sensors, the subsequent chapter discusses the fundamentals in semiconductor technology, with particular emphasis on silicon. The necessary process steps to manufacture strip sensors in a so-called planar process are described in detail. Furthermore, the effects of irradiation on silicon strip sensors are discussed. To conclude the introductory part of the thesis, the design of the silicon strip sensors of the CMS Tracker are described in detail. The choice of the substrate material and the complex geometry of the sensors are reviewed and the quality assurance procedures for the production of the sensors are presented. Furthermore the design of the detector modules are described. The main part of this thesis starts with a discussion on the demands on the tracker caused by the increase in luminosity which is proposed as an upgrade to the LHC accelerator (sLHC). This chapter motivates the work I have conducted and clarifies why the solutions proposed by myself are important contributions to the upgrade of the CMS tracker. The following chapters present the concepts that are necessary to operate the silicon strip sensors at sLHC luminosities and additional improvements to the construction and quality assurance of the sensors and the detector modules. The most important concepts and works presented in chapters 7 to 9 are: Development of a software framework to enable the flexible and quick design of test structures and sensors. Selecting a suitable sensor material which is sufficiently radiation hard. Design, implementation and production of a standard set of test structures to enable the quality assurance of such sensors and any future developments. Electrical characterisation of the test structures and analysis

  7. Amphiphilic silicone architectures via anaerobic thiol-ene chemistry.

    Science.gov (United States)

    Keddie, Daniel J; Grande, John B; Gonzaga, Ferdinand; Brook, Michael A; Dargaville, Tim R

    2011-11-18

    Despite broad application, few silicone-based surfactants of known structure or, therefore, surfactancy have been prepared because of an absence of selective routes and instability of silicones to acid and base. Herein the synthesis of a library of explicit silicone-poly(ethylene glycol) (PEG) materials is reported. Pure silicone fragments were generated by the B(C(6)F(5))(3)-catalyzed condensation of alkoxysilanes and vinyl-functionalized hydrosilanes. The resulting pure products were coupled to thiol-terminated PEG materials using photogenerated radicals under anaerobic conditions.

  8. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  9. Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

    Science.gov (United States)

    Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

    2015-08-12

    Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

  10. Application of Moessbauer effect in the study of silicon steels

    International Nuclear Information System (INIS)

    Lonsky, B.; Wiglasz, V.; Prejsa, M.

    1975-11-01

    The results for 1975 are presented of the research task: Application of the Moessbauer effect in the study of silicon steels. Moessbauer spectra were measured on Czechoslovak made materials of Eo 10 quality and of foreign made material of M2H quality in dependence on tensile stress. Moessbauer spectra were measured on identical samples with electrotechnical insulation and after the removal thereof, with the aim of ascertaining the effect of this insulation. All measurements were evaluated on the basis of changes in the intensity ratios of the first and second lines of the spectrum which characterize the domain structure. These measurements have confirmed that electrotechnical insulation forms in the basic material small tensile stresses which improve the magnetic properties of the material. Moessbauer spectra were measured using the absorption method on identical materials in thin foils with the aim of investigating the configuration of Si atoms in the Fe3%Si alloy. It was found that both materials contain Si atoms in both the first and the second coordination spheres. (author)

  11. Amorphization of silicon by femtosecond laser pulses

    International Nuclear Information System (INIS)

    Jia, Jimmy; Li Ming; Thompson, Carl V.

    2004-01-01

    We have used femtosecond laser pulses to drill submicron holes in single crystal silicon films in silicon-on-insulator structures. Cross-sectional transmission electron microscopy and energy dispersive x-ray analysis of material adjacent to the ablated holes indicates the formation of a layer of amorphous Si. This demonstrates that even when material is ablated using femtosecond pulses near the single pulse ablation threshold, sufficient heating of the surrounding material occurs to create a molten zone which solidifies so rapidly that crystallization is bypassed

  12. Zirconates heteroepitaxy on silicon

    Science.gov (United States)

    Fompeyrine, Jean; Seo, Jin Won; Seigwart, Heinz; Rossel, Christophe; Locquet, Jean-Pierre

    2002-03-01

    In the coming years, agressive scaling in CMOS technology will probably trigger the transition to more advanced materials, for example alternate gate dielectrics. Epitaxial thin films are attractive candidates, as long as the difficult chemical and structural issues can be solved, and superior properties can be obtained. Since very few binary oxides can match the electrical, physical and structural requirements which are needed, a combination of those binaries are used here to investigate other lattice matched oxides. We will report on the growth of crystalline zirconium oxide thin films stabilized with different cationic substitutions. All films have been grown in an oxide-MBE system by direct evaporation of the elements on silicon substrates and exposure to molecular or atomic oxygen. The conditions required to obtain epitaxial thin films will be discussed, and successful examples will be presented.

  13. High-k materials in the electrolyte/insulator/silicon configuration. Characterization and application in bio-electronics; Hoch-k-Materialien in der Elektrolyt/Isolator/Silizium-Konfiguration. Charakterisierung und Anwendung in der Bioelektronik

    Energy Technology Data Exchange (ETDEWEB)

    Wallrapp, F

    2006-12-19

    In order to elicit action potentials in nerve cells adhered on electrodes, a certain current is required across the electrode. Electrochemical reactions may cause damage to cells and electrodes. This is evaded by using silicon electrodes which are insulated by a dielectric. In doing so, only capacitive current is flowing, and electrochemical are avoided. The aim of this work was to fabricate novel stimulation chips exhibiting an enhanced capacitance which render new biological applications possible. These chips were to be characterized and used for the stimulation of cells. The formerly used dielectric SiO{sub 2} was replaced by HfO{sub 2} and TiO{sub 2}, with both of them featuring a higher dielectric constant. They were deposited on the silicon substrate by ALD (atomic layer deposition). The chips were characterized in the electrolyte/insulator/semiconductor (EIS) configuration. Owing to the low leakage current of the EIS configuration, the characterization of the high-k materials was possible in more detail as compared to using a metallic top contact (MIS configuration). The voltage-dependent capacitances of the HfO{sub 2} films could be interpreted by means of a common metal/SiO{sub 2}/silicon system. In contrast, the TiO{sub 2} films exhibited interesting properties which could only be rationalized with the help of numerical calculations assuming free electrons in the TiO{sub 2}. The low-lying conduction band of TiO{sub 2} caused accumulation of electrons within the TiO{sub 2} for certain voltages, which led to an enhanced capacitance. The effects of high voltages, frequency, film thickness and interlayer composition were examined and brought into compliance with the model. The novel TiO{sub 2} stimulation devices featured a five-fold capacitance increase as compared to former SiO{sub 2} chips. Using them, two fundamental stimulation mechanisms were induced in HEK293 cells expressing the recombinant potassium channel Kv1.3: Opening of ion channels and

  14. Twenty-fold plasmon-induced enhancement of radiative emission rate in silicon nanocrystals embedded in silicon dioxide

    International Nuclear Information System (INIS)

    Gardelis, S; Gianneta, V.; Nassiopoulou, A.G

    2016-01-01

    We report on a 20-fold enhancement of the integrated photoluminescence (PL) emission of silicon nanocrystals, embedded in a matrix of silicon dioxide, induced by excited surface plasmons from silver nanoparticles, which are located in the vicinity of the silicon nanocrystals and separated from them by a silicon dioxide layer of a few nanometers. The electric field enhancement provided by the excited surface plasmons increases the absorption cross section and the emission rate of the nearby silicon nanocrystals, resulting in the observed enhancement of the photoluminescence, mainly attributed to a 20-fold enhancement in the emission rate of the silicon nanocrystals. The observed remarkable improvement of the PL emission makes silicon nanocrystals very useful material for photonic, sensor and solar cell applications.

  15. Characterization and Modeling of Neutron and Gamma-Ray Radiation Damage in Silicon Carbide Semi-Conductor Materials and Silica Optical Fibers at Cryogenic Temperature

    Data.gov (United States)

    National Aeronautics and Space Administration — When radiation is incident upon a material, it can knock atoms within the lattice out of their proper positions. However, this damage can often be overcome because...

  16. Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor

    Science.gov (United States)

    Zhang, Xian-Jun; Yang, Yin-Tang; Duan, Bao-Xing; Chai, Chang-Chun; Song, Kun; Chen, Bin

    2012-09-01

    Sub-threshold characteristics of the dual material gate 4H-SiC MESFET (DMGFET) are investigated and the analytical models to describe the drain-induced barrier lowering (DIBL) effect are derived by solving one- and two-dimensional Poisson's equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the drain-induced barrier lowering (DIBL) effect. The calculated results reveal that the dual material gate (DMG) structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function, which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal—semiconductor field-effect transistor (SMGFET).

  17. Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor

    International Nuclear Information System (INIS)

    Zhang Xian-Jun; Yang Yin-Tang; Duan Bao-Xing; Chai Chang-Chun; Song Kun; Chen Bin

    2012-01-01

    Sub-threshold characteristics of the dual material gate 4H-SiC MESFET (DMGFET) are investigated and the analytical models to describe the drain-induced barrier lowering (DIBL) effect are derived by solving one- and two-dimensional Poisson's equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the drain-induced barrier lowering (DIBL) effect. The calculated results reveal that the dual material gate (DMG) structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function, which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal—semiconductor field-effect transistor (SMGFET)

  18. Silicon nanowire hot carrier electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.

    2016-08-31

    Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.

  19. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  20. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared