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Sample records for silicon ingot edge

  1. Silicon Ingot Casting - Heat Exchanger Method (HEM). Multi-Wire Slicing - Fixed Abrasive Slicing Technique (Fast). Phase 4 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-Cost Solar Array Project

    Science.gov (United States)

    Schmid, F.

    1981-01-01

    The crystallinity of large HEM silicon ingots as a function of heat flow conditions is investigated. A balanced heat flow at the bottom of the ingot restricts spurious nucleation to the edge of the melted-back seed in contact with the crucible. Homogeneous resistivity distribution over all the ingot has been achieved. The positioning of diamonds electroplated on wirepacks used to slice silicon crystals is considered. The electroplating of diamonds on only the cutting edge is described and the improved slicing performance of these wires evaluated. An economic analysis of value added costs of HEM ingot casting and band saw sectioning indicates the projected add on cost of HEM is well below the 1986 allocation.

  2. Impurity segregation behavior in polycrystalline silicon ingot grown with variation of electron-beam power

    Science.gov (United States)

    Lee, Jun-Kyu; Lee, Jin-Seok; Jang, Bo-Yun; Kim, Joon-Soo; Ahn, Young-Soo; Cho, Churl-Hee

    2014-08-01

    Electron beam melting (EBM) systems have been used to improve the purity of metallurgical grade silicon feedstock for photovoltaic application. Our advanced EBM system is able to effectively remove volatile impurities using a heat source with high energy from an electron gun and to continuously allow impurities to segregate at the top of an ingot solidified in a directional solidification (DS) zone in a vacuum chamber. Heat in the silicon melt should move toward the ingot bottom for the desired DS. However, heat flux though the ingot is changed as the ingot becomes longer due to low thermal conductivity of silicon. This causes a non-uniform microstructure of the ingot, finally leading to impurity segregation at its middle. In this research, EB power irradiated on the silicon melt was controlled during the ingot growth in order to suppress the change of heat flux. EB power was reduced from 12 to 6.6 kW during the growth period of 45 min with a drop rate of 0.125 kW/min. Also, the silicon ingot was grown under a constant EB power of 12 kW to estimate the effect of the drop rate of EB power. When the EB power was reduced, the grains with columnar shape were much larger at the middle of the ingot compared to the case of constant EB power. Also, the present research reports a possible reason for the improvement of ingot purity by considering heat flux behaviors.

  3. Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis

    Energy Technology Data Exchange (ETDEWEB)

    Karches, Barbara; Hampel, Gabriele; Plonka, Christian; Stieghorst, Christian; Wiehl, Norbert [Mainz Univ. (Germany). Inst. for Nuclear Chemistry; Schoen, Jonas; Krenckel, Patricia; Riepe, Stephan [Fraunhofer Institute for Solar Energy Systems, Freiburg (Germany); Gerstenberg, Heiko [Technische Univ. Muenchen, Garching (Germany). Heinz-Maier-Leibniz Zentrum; Ponsard, Bernard [Belgian Nuclear Research Centre (SCK CEN), Mol (Belgium). BR2 reactor

    2017-09-01

    In a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations.

  4. The status of silicon ribbon growth technology for high-efficiency silicon solar cells

    Science.gov (United States)

    Ciszek, T. F.

    1985-01-01

    More than a dozen methods have been applied to the growth of silicon ribbons, beginning as early as 1963. The ribbon geometry has been particularly intriguing for photovoltaic applications, because it might provide large area, damage free, nearly continuous substrates without the material loss or cost of ingot wafering. In general, the efficiency of silicon ribbon solar cells has been lower than that of ingot cells. The status of some ribbon growth techniques that have achieved laboratory efficiencies greater than 13.5% are reviewed, i.e., edge-defined, film-fed growth (EFG), edge-supported pulling (ESP), ribbon against a drop (RAD), and dendritic web growth (web).

  5. Influence of additional heat exchanger block on directional solidification system for growing multi-crystalline silicon ingot - A simulation investigation

    Science.gov (United States)

    Nagarajan, S. G.; Srinivasan, M.; Aravinth, K.; Ramasamy, P.

    2018-04-01

    Transient simulation has been carried out for analyzing the heat transfer properties of Directional Solidification (DS) furnace. The simulation results revealed that the additional heat exchanger block under the bottom insulation on the DS furnace has enhanced the control of solidification of the silicon melt. Controlled Heat extraction rate during the solidification of silicon melt is requisite for growing good quality ingots which has been achieved by the additional heat exchanger block. As an additional heat exchanger block, the water circulating plate has been placed under the bottom insulation. The heat flux analysis of DS system and the temperature distribution studies of grown ingot confirm that the established additional heat exchanger block on the DS system gives additional benefit to the mc-Si ingot.

  6. Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

    Directory of Open Access Journals (Sweden)

    Zaoyang Li

    2016-01-01

    Full Text Available We carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat transfer and silicon crystal growth. It is found that the crucible plays an important role in heat transfer, and therefore its thermal conductivity can influence the crystal growth significantly in the entire DS process. Increasing the crucible thermal conductivity can shorten the time for melting of silicon feedstock and growing of silicon crystal significantly, and therefore large thermal conductivity is helpful in saving both production time and power energy. However, the high temperature gradient in the silicon ingots and the locally concave melt-crystal interface shape for large crucible thermal conductivity indicate that high thermal stress and dislocation propagation are likely to occur during both growing and annealing stages. Based on the numerical simulations, some discussions on designing and choosing the crucible thermal conductivity are presented.

  7. Metal impurities profile in a 450kg multi-crystalline silicon ingot by Cold Neutron Prompt Gamma-ray Activation Analysis

    International Nuclear Information System (INIS)

    Baek, Hani; Sun, Gwang Min; Kim, Ji seok; Oh, Mok; Chung, Yong Sam; Moon, Jong Hwa; Kim, Sun Ha; Baek, Sung Yeol; Tuan, Hoang Sy Minh

    2014-01-01

    Metal impurities are harmful to multi-crystalline silicon solar cells. They reduce solar cell conversion efficiencies through increased carrier recombination. They are present as isolated point-like impurities or precipitates. This work is to study the concentration profiles of some metal impurities of the directionally solidified 450kg multi-crystalline silicon ingot grown for solar cell production. The concentration of such impurities are generally below 10 15 cm -3 , and as such cannot be detected by physical techniques such as secondary-ion-mass spectroscopy(SIMS). So, we have tried to apply Cold Neutron - Prompt Gamma ray Activation Analysis(CN-PGAA) at the HANARO reactor research. The impurity concentrations of Au, Mn, Pt, Mo of a photovoltaic grade multi-crystalline silicon ingot appear by segregation from the liquid to the solid phase in the central region of the ingot during the crystallization. In the impurities concentration of the bottom region is higher than middle region due to the solid state diffusion. Towards the top region the segregation impurities diffused, during cooling process

  8. Improving the Quality of the Deteriorated Regions of Multicrystalline Silicon Ingots during General Solar Cell Processes

    International Nuclear Information System (INIS)

    Wu Shan-Shan; Wang Lei; Yang De-Ren

    2011-01-01

    The behavior of wafers and solar cells from the border of a multicrystalline silicon (mc-Si) ingot, which contain deteriorated regions, is investigated. It is found that the diffusion length distribution of minority carriers in the cells is uniform, and high efficiency of the solar cells (about 16%) is achieved. It is considered that the quality of the deteriorated regions could be improved to be similar to that of adjacent regions. Moreover, it is indicated that during general solar cell fabrication, phosphorus gettering and hydrogen passivation could significantly improve the quality of deteriorated regions, while aluminum gettering by RTP could not. Therefore, it is suggested that the border of a mc-Si ingot could be used to fabricate high efficiency solar cells, which will increase mc-Si utilization effectively. (condensed matter: structure, mechanical and thermal properties)

  9. Quality Management for Neutron Transmutation Doping of Silicon Ingot in HANARO

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Ki-Doo; Kim, Ji-Uk; Yun, Hwa-Kyung; Lim, Chul-Hong; Kim, Young-Chil; Kim, Myong-Seop; Park, Sang-Jun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2007-10-15

    By using this doping method, silicon semiconductors with extremely uniform dopant distributions can be produced, and this is the dominant advantage of NTD compared with a conventional chemical doping. Good uniformity of a dopant concentration is usually required for high power applications such as thyristor (SCR), IGBT, IGCT and GTO and for special sensors. Achieving an accurate neutron fluence corresponding to a target resistivity as well as a uniform irradiation is the prime target of a neutron irradiation for NTD. Generally, in order to reach an accurate neutron fluence, a real time neutron flux is monitored by a neutron detector such as a Self-powered Neutron Detector(SPND). And, after an irradiation, the total irradiation fluence is confirmed by measuring the absolute activity of a neutron activation sample that has been irradiated with a silicon ingot, and thus the SPND can be properly calibrated. Excellent irradiation uniformity and a high accuracy for a target neutron dose have been achieved from the early works of NTD. However, to maintain this excellent quality, the neutron irradiation fluence should be continuously modified and controlled. So, in this work, an activity to maintain the irradiation quality is introduced.

  10. Numerical analysis of thermal stress and dislocation density distributions in large size multi-crystalline silicon ingots during the seeded growth process

    Science.gov (United States)

    Nguyen, Thi Hoai Thu; Chen, Jyh-Chen; Hu, Chieh; Chen, Chun-Hung; Huang, Yen-Hao; Lin, Huang-Wei; Yu, Andy; Hsu, Bruce

    2017-06-01

    In this study, a global transient numerical simulation of silicon growth from the beginning of the solidification process until the end of the cooling process is carried out modeling the growth of an 800 kg ingot in an industrial seeded directional solidification furnace. The standard furnace is modified by the addition of insulating blocks in the hot zone. The simulation results show that there is a significant decrease in the thermal stress and dislocation density in the modified model as compared to the standard one (a maximal decrease of 23% and 75% along the center line of ingot for thermal stress and dislocation density, respectively). This modification reduces the heating power consumption for solidification of the silicon melt by about 17% and shortens the growth time by about 2.5 h. Moreover, it is found that adjusting the operating conditions of modified model to obtain the lower growth rate during the early stages of the solidification process can lower dislocation density and total heater power.

  11. Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2007-01-01

    The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

  12. Slim edges in double-sided silicon 3D detectors

    International Nuclear Information System (INIS)

    Povoli, M; Dalla Betta, G-F; Bagolini, A; Boscardin, M; Giacomini, G; Vianello, E; Zorzi, N

    2012-01-01

    Minimization of the insensitive edge area is one of the key requirements for silicon radiation detectors to be used in future silicon trackers. In 3D detectors this goal can be achieved with the active edge, at the expense of a high fabrication process complexity. In the framework of the ATLAS 3D sensor collaboration, we produced modified 3D silicon sensors with a double-sided technology. While this approach is not suitable to obtain active edges, because it does not use a support wafer, it allows for a new type of edge termination, the slim edge. In this paper we report on the development of the slim edge, from numerical simulations to design and testing, proving that it works effectively without increasing the fabrication complexity of silicon 3D detectors, and that it could be further optimized to reduce the insensitive edge region to less than 100 μm.

  13. Low cost monocrystalline silicon sheet fabrication for solar cells by advanced ingot technology

    Science.gov (United States)

    Fiegl, G. F.; Bonora, A. C.

    1980-01-01

    The continuous liquid feed (CLF) Czochralski furnace and the enhanced I.D. slicing technology for the low-cost production of monocrystalline silicon sheets for solar cells are discussed. The incorporation of the CLF system is shown to improve ingot production rate significantly. As demonstrated in actual runs, higher than average solidification rates (75 to 100 mm/hr for 150 mm 1-0-0 crystals) can be achieved, when the system approaches steady-state conditions. The design characteristics of the CLF furnace are detailed, noting that it is capable of precise control of dopant impurity incorporation in the axial direction of the crystal. The crystal add-on cost is computed to be $11.88/sq m, considering a projected 1986 25-slice per cm conversion factor with an 86% crystal growth yield.

  14. Fast Pulling of n-Type Si Ingots for Enhanced Si Solar Cell Production

    Science.gov (United States)

    Kim, Kwanghun; Park, Sanghyun; Park, Jaechang; Pang, Ilsun; Ryu, Sangwoo; Oh, Jihun

    2018-03-01

    Reducing the manufacturing costs of silicon substrates is an important issue in the silicon-based solar cell industry. In this study, we developed a high-throughput ingot growth method by accelerating the pulling speed in the Czochralski process. By controlling the heat flow of the ingot growth chamber and at the solid-liquid interfaces, the pulling speed of an ingot could be increased by 15% compared to the conventional method, while retaining high quality. The wafer obtained at a high pulling speed showed an enhanced minority carrier lifetime compared with conventional wafers, due to the vacancy passivation effect, and also demonstrated comparable bulk resistivity and impurities. The results in this work are expected to open a new way to enhance the productivity of Si wafers used for Si solar cells, and therefore, to reduce the overall manufacturing cost.

  15. Fiscal 2000 achievement report. Research and development of fast-acting innovative energy-environment technology (Development of fast-acting high-efficiency solar cell technology - Development of high-quality ingot manufacturing technology); 2000 nendo shin energy sangyo gijutsu sogo kaihatsu kiko itaku kenkyu gyomu seika hokokusho. Sokkoteki kakushinteki energy kankyo gijutsu kenkyu kaihatsu (Sokkogata kokoritsu taiyo denchi gijutsu kaihatsu - Kohinshitsu ingot seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Research and development was conducted of a technology for manufacturing an ultrathin polycrystalline silicon solar cell capable of efficiency enhancement and cost reduction earlier than the types of polycrystalline solar cells now available on the market. In this fiscal year, a silicon melt/solidification experimenting apparatus was built for manufacturing high-quality silicon ingots. Using an apparatus with its performance similar to the newly built one, a preliminary experiment was conducted involving high-purity silicon ingot manufacturing. In the experiment, boron was added to 75 kg of silicon for semiconductor devices so that its resistivity may be 0.5 ohm-cm. The silicon was melted in a quartz mold, and then subjected to unidirectional coagulation at 0.13 mm/min that started at the bottom to proceed upward. The result was a silicon ingot 44 cm times 44 cm times 17 cm (height). The ingot thus obtained exhibited 0.4-0.8 ohm-cm in resistivity distribution. Solar cells produced from the ingot showed a conversion rate of 16.9%. (NEDO)

  16. Effect of annealing temperature on the thermal stress and dislocation density of mc-Si ingot grown by DS process for solar cell application

    Science.gov (United States)

    Sanmugavel, S.; Srinivasan, M.; Aravinth, K.; Ramasamy, P.

    2018-04-01

    90% of the solar industries are using crystalline silicon. Cost wise the multi-crystalline silicon solar cells are better compared to mono crystalline silicon. But because of the presence of grain boundaries, dislocations and impurities, the efficiency of the multi-crystalline silicon solar cells is lower than that of mono crystalline silicon solar cells. By reducing the defect and dislocation we can achieve high conversion efficiency. The velocity of dislocation motion increases with stress. By annealing the grown ingot at proper temperature we can decrease the stress and dislocation. Our simulation results show that the value of stress and dislocation density is decreased by annealing the grown ingot at 1400K and the input parameters can be implemented in real system to grow a better mc-Si ingot for energy harvesting applications.

  17. Report on achievements in fiscal 1999. Development of energy usage rationalizing silicon manufacturing process (Development of manufacturing technology for mass production of silicon for solar cells); 1999 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Discussions were given on manufacture of raw material silicon for solar cells with regard to boron removal, solidification, finishing and refining of metallic impurities, refining of unutilized silicon scraps, and making them into wafers and solar cells after refining. This paper summarizes the achievements in fiscal 1999. With regard to purity deterioration due to contamination by boron containing silica powder generated during the boron removal in the manufacturing process, the facilities were modified resulting in the reduction thereof to 0.04 ppmw or less. Regarding the repetitive use of boron removing crucibles, the experiment identified the possibility of using them for more than three times. In trial fabrication of samples by using the solidification refining and cast integrated process, ingots of 550 mm square and about 300 mm high were obtained, which were sliced into 10-cm square materials for use as wafers. Measurement of the conversion efficiency has resulted in 13% or more which is almost equivalent in the center and edges of the ingot. It was revealed that solar cell wafers may be fabricated by using this process, which can use either the p-type low-resistance silicon scraps or the metallic silicon as the starting material. (NEDO)

  18. Continuous Czochralski growth: Silicon sheet growth development of the large area sheet task of the low cost silicon solar array project

    Science.gov (United States)

    Johnson, C. M.

    1980-12-01

    The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg of silicon single crystal material 15 cm or greater utilizing one common silicon container material (one crucible) is investigated. A crystal grower that is recharged with a new supply of polysilicon material while still under vacuum and at temperatures above the melting point of silicon is developed. It accepts large polysilicon charges up to 30 kg, grows large crystal ingots (to 15 cm diameter and 25 kg in weight), and holds polysilicon material for recharging (rod or lump) while, at the same time, growing crystal ingots. Special equipment is designed to recharge polysilicon rods, recharge polysilicon lumps, and handle and store large, hot silicon crystal ingots. Many continuous crystal growth runs were performed lasting as long as 109 hours and producing as many as ten crystal ingots, 15 cm with weights progressing to 27 kg.

  19. Primary Structure and Mechanical Properties of AlSi2 Alloy Continuous Ingots

    Directory of Open Access Journals (Sweden)

    Wróbel T.

    2017-06-01

    Full Text Available The paper presents the research results of horizontal continuous casting of ingots of aluminium alloy containing 2% wt. silicon (AlSi2. Together with the casting velocity (velocity of ingot movement we considered the influence of electromagnetic stirring in the area of the continuous casting mould on refinement of the ingot’s primary structure and their selected mechanical properties, i.e. tensile strength, yield strength, hardness and elongation. The effect of primary structure refinement and mechanical properties obtained by electromagnetic stirring was compared with refinement obtained by using traditional inoculation, which consists in introducing additives, i.e. Ti, B and Sr, to the metal bath. On the basis of the obtained results we confirmed that inoculation done by electromagnetic stirring in the range of the continuous casting mould guarantees improved mechanical properties and also decreases the negative influence of casting velocity, thus increasing the structure of AlSi2 continuous ingots.

  20. Effect of impurities and processing on silicon solar cells. Volume 1: Characterization methods for impurities in silicon and impurity effects data base

    Science.gov (United States)

    Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Campbell, R. B.; Blais, P. D.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

    1980-01-01

    Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.

  1. Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, M.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2008-01-01

    The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of 110 silicon wafers. SiO2 nano-ridges of 20 nm in width were

  2. Silicon Nanowire Fabrication Using Edge and Corner Lithography

    NARCIS (Netherlands)

    Yagubizade, H.; Berenschot, Johan W.; Jansen, Henricus V.; Elwenspoek, Michael Curt; Tas, Niels Roelof

    2010-01-01

    This paper presents a wafer scale fabrication method of single-crystalline silicon nanowires (SiNWs) bound by <111> planes using a combination of edge and corner lithography. These are methods of unconventional nanolithography for wafer scale nano-patterning which determine the size of nano-features

  3. Silicon K-edge XANES spectra of silicate minerals

    Science.gov (United States)

    Li, Dien; Bancroft, G. M.; Fleet, M. E.; Feng, X. H.

    1995-03-01

    Silicon K-edge x-ray absorption near-edge structure (XANES) spectra of a selection of silicate and aluminosilicate minerals have been measured using synchrotron radiation (SR). The spectra are qualitatively interpreted based on MO calculation of the tetrahedral SiO{4/4-}cluster. The Si K-edge generally shifts to higher energy with increased polymerization of silicates by about 1.3 eV, but with considerable overlap for silicates of different polymerization types. The substitution of Al for Si shifts the Si K-edge to lower energy. The chemical shift of Si K-edge is also sensitive to cations in more distant atom shells; for example, the Si K-edge shifts to lower energy with the substitution of Al for Mg in octahedral sites. The shifts of the Si K-edge show weak correlation with average Si-O bond distance (dSi-O), Si-O bond valence (sSi-O) and distortion of SiO4 tetrahedra, due to the crystal structure complexity of silicate minerals and multiple factors effecting the x-ray absorption processes.

  4. Silicon Ingot Casting - Heat Exchanger Method Multi-wire Slicing - Fixed Abrasive Slicing Technique. Phase 3 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-cost Solar Array Project

    Science.gov (United States)

    Schmid, F.; Khattak, C. P.

    1979-01-01

    Several 20 cm diameter silicon ingots, up to 6.3 kg. were cast with good crystallinity. The graphite heat zone can be purified by heating it to high temperatures in vacuum. This is important in reducing costs and purification of large parts. Electroplated wires with 45 um synthetic diamonds and 30 um natural diamonds showed good cutting efficiency and lifetime. During slicing of a 10 cm x 10 cm workpiece, jerky motion occurred in the feed and rocking mechanisms. This problem is corrected and modifications were made to reduce the weight of the bladeheat by 50%.

  5. Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

    International Nuclear Information System (INIS)

    Jung, Y. J.; Kim, W. K.; Jung, J. H.

    2014-01-01

    The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

  6. Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Y. J.; Kim, W. K.; Jung, J. H. [Yeungnam University, Gyeongsan (Korea, Republic of)

    2014-08-15

    The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

  7. Dehydrogenation in large ingot casting process

    International Nuclear Information System (INIS)

    Ubukata, Takashi; Suzuki, Tadashi; Ueda, Sou; Shibata, Takashi

    2009-01-01

    Forging components (for nuclear power plants) have become larger and larger because of decreased weld lines from a safety point of view. Consequently they have been manufactured from ingots requirement for 200 tons or more. Dehydrogenation is one of the key issues for large ingot manufacturing process. In the case of ingots of 200 tons or heavier, mold stream degassing (MSD) has been applied for dehydrogenation. Although JSW had developed mold stream degassing by argon (MSD-Ar) as a more effective dehydrogenating practice, MSD-Ar was not applied for these ingots, because conventional refractory materials of a stopper rod for the Ar blowing hole had low durability. In this study, we have developed a new type of stopper rod through modification of both refractory materials and the stopper rod construction and have successfully expanded the application range of MSD-Ar up to ingots weighting 330 tons. Compared with the conventional MSD, the hydrogen content in ingots after MSD-Ar has decreased by 24 percent due to the dehydrogenation rate of MSD-Ar increased by 34 percent. (author)

  8. Characterization of HEM silicon for solar cells. [Heat Exchanger Method

    Science.gov (United States)

    Dumas, K. A.; Khattak, C. P.; Schmid, F.

    1981-01-01

    The Heat Exchanger Method (HEM) is a promising low-cost ingot casting process for material used for solar cells. This is the only method that is capable of casting single crystal ingots with a square cross section using a directional solidification technique. This paper describes the chemical, mechanical and electrical properties of the HEM silicon material as a function of position within the ingot.

  9. X-ray imaging characterization of active edge silicon pixel sensors

    International Nuclear Information System (INIS)

    Ponchut, C; Ruat, M; Kalliopuska, J

    2014-01-01

    The aim of this work was the experimental characterization of edge effects in active-edge silicon pixel sensors, in the frame of X-ray pixel detectors developments for synchrotron experiments. We produced a set of active edge pixel sensors with 300 to 500 μm thickness, edge widths ranging from 100 μm to 150 μm, and n or p pixel contact types. The sensors with 256 × 256 pixels and 55 × 55 μm 2 pixel pitch were then bump-bonded to Timepix readout chips for X-ray imaging measurements. The reduced edge widths makes the edge pixels more sensitive to the electrical field distribution at the sensor boundaries. We characterized this effect by mapping the spatial response of the sensor edges with a finely focused X-ray synchrotron beam. One of the samples showed a distortion-free response on all four edges, whereas others showed variable degrees of distortions extending at maximum to 300 micron from the sensor edge. An application of active edge pixel sensors to coherent diffraction imaging with synchrotron beams is described

  10. Design Concept of Kijang Research Reactor for Neutron Transmutation Doping of 300 MM ingots

    International Nuclear Information System (INIS)

    Jun, B. J.; Kim, H. S.; Seo, C. G.; Kim, H. C.; Lee, B. C.

    2013-01-01

    Neutron transmutation doping will be one of the important utilization areas of the Kijang research reactor, which is currently under design. The reactor will serve for at least 50 years. As the diameter of a current NTD ingot is already large compared to the size of the reactor, unless a provision in the reactor design is specifically made for the irradiation of potential larger diameter ingots in the future, the lifetime sustainability of the NTD activity, if possible, may be difficult to achieve. While 200 mm became the largest diameter of NTD wafers a few years ago, 300 mm is the majority nowadays in the silicon semiconductor market, and one of the world leading device companies recently invested in the construction of a 450 mm fabrication plant. The usual peak time of a wafer diameter has been around 12 years. Though the generation gap of a NTD wafer diameter has become longer as time has passed, we can foresee that NTD demand for 300 mm ingots will arise within 20 years if their NTD is possible. Our calculations show that the radial uniformity for the 300 mm ingot irradiation may be acceptable by wafer companies. However, the NTD for 450 mm ingots is judged as impractical. The KJRR is designed to irradiate 6' and 200 mm ingots to accommodate the major demands in the current and near future markets. We suppose that a 6' irradiation facility will be modified into a 300 mm irradiation facility when the demand for a 300 mm NTD arises. As the demand for the 300 mm NTD increases, other 6' and 200 mm NTD facilities will be modified one by one. A minimization of the component replacement and long-lived radwaste and a facilitation of the replacement work for each modification are important factors along with a better performance of NTD facilities

  11. Laser process for extended silicon thin film solar cells

    International Nuclear Information System (INIS)

    Hessmann, M.T.; Kunz, T.; Burkert, I.; Gawehns, N.; Schaefer, L.; Frick, T.; Schmidt, M.; Meidel, B.; Auer, R.; Brabec, C.J.

    2011-01-01

    We present a large area thin film base substrate for the epitaxy of crystalline silicon. The concept of epitaxial growth of silicon on large area thin film substrates overcomes the area restrictions of an ingot based monocrystalline silicon process. Further it opens the possibility for a roll to roll process for crystalline silicon production. This concept suggests a technical pathway to overcome the limitations of silicon ingot production in terms of costs, throughput and completely prevents any sawing losses. The core idea behind these thin film substrates is a laser welding process of individual, thin silicon wafers. In this manuscript we investigate the properties of laser welded monocrystalline silicon foils (100) by micro-Raman mapping and spectroscopy. It is shown that the laser beam changes the crystalline structure of float zone grown silicon along the welding seam. This is illustrated by Raman mapping which visualizes compressive stress as well as tensile stress in a range of - 147.5 to 32.5 MPa along the welding area.

  12. Vacuum induction melting of uranium ingots

    International Nuclear Information System (INIS)

    Hussain, M.M.; Bagchi, S.N.; Singh, S.P.

    1992-01-01

    Massive uranium ingot is produced from green salt (UF 4 ) using calciothermic reduction (CTR) or magnesiothermic reduction (MTR) process. CTR process has been replaced by MTR process at Trombay due to economic considerations. This paper highlights problems associated with the vacuum induction melting of MTR ingots and the remedial measures taken to produce good quality billets. Details of metallographic examination of inclusions in ingots and billets have been incorporated. (author). 3 figs

  13. Modelling of defects in ingot forging

    DEFF Research Database (Denmark)

    Christiansen, Peter

    The present report presents an investigation of the ingot forging process with special emphasis on modelling the influence of die geometry on the soundness of the ingot after hot forging. An investigation on how to model damage is also performed. The influence of the lower die angle is quantified...... angle of 130o-140o giving rise to the largest centreline porosity closure regardless of material hardening behaviour applied. Friction was found only to have minor influence on the optimum. Multi stroke forging operations have also been modelled since the ingot forging process consists of many forging...... damage. It is found that when evaluating damage only by relative density; feed size and lower die angle does not influence whether the hot forging process is successful or not. This is in disagreement with the general understanding of the ingot forging process. When evaluating ductile damage...

  14. The Structural Evolution and Segregation in a Dual Alloy Ingot Processed by Electroslag Remelting

    Directory of Open Access Journals (Sweden)

    Yu Liu

    2016-12-01

    Full Text Available The structural evolution and segregation in a dual alloy made by electroslag remelting (ESR was investigated by various analytical techniques. The results show that the macrostructure of the ingot consists of two crystallization structures: one is a quite narrow, fine, equiaxed grain region at the edge and the other is a columnar grain region, which plays a leading role. The typical columnar structure shows no discontinuity between the CrMoV, NiCrMoV, and transition zones. The average secondary arm-spacing is coarsened from 35.3 to 49.2 μm and 61.5 μm from the bottom to the top of the ingot. The distinctive features of the structure are attributed to the different cooling conditions during the ESR process. The Ni, Cr, and C contents markedly increase in the transition zone (TZ and show a slight increase from the bottom to the top and from the surface to the center of the ESR ingot due to the partition ratios, gravity segregation, the thermal buoyancy flow, the solutal buoyancy flow, and the inward Lorentz force. Less dendrite segregation exists in the CrMoV zone and the transition zone due to a stronger cooling rate (11.1 and 4.5 °C/s and lower Cr and C contents. The precipitation of carbides was observed in the ingot due to a lower solid solubility of the carbon element in the α phase.

  15. Edge-TCT for the investigation of radiation damaged silicon strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Feindt, Finn

    2017-02-15

    The edge Transient Current Technique (TCT) is a method for the investigation of silicon sensors. This method requires infrared light from a sub-ns pulsed laser to be focused to a μm-size spot and scanned across the polished cut edge of a sensor. Electron-hole pairs are generated along the light beam in the sensor. These charge carriers drift in the electric field and induce transient currents on the sensor electrodes. The current transients are analyzed as a function of the applied voltage, temperature, absorbed dose and position of the laser-light focus, in order to determine the the drift velocities, electric field and the charge collection in the strip sensor. In the scope of this work, a new edge-TCT setup is commissioned, a procedure for the polishing of the cut edge is implemented and a method to position the focus of the laser light with respect to the sensor is developed. First edge-TCT measurements are performed on non-irradiated, 285 μm thick n-type strip sensors, and the pulse shape and charge collection is studied under different conditions. Furthermore, the prompt current of the transients is extracted, which is the first step towards the determination of the electric field. A new method to measure the attenuation of light in silicon is tested on a non-irradiated sensor and on sensors irradiated with up to a 1 MeV neutron equivalent fluence of 1.14 x 10{sup 15} cm{sup -2}, using laser light with a wavelength of 1052 nm.

  16. Edge-TCT for the investigation of radiation damaged silicon strip sensors

    International Nuclear Information System (INIS)

    Feindt, Finn

    2017-02-01

    The edge Transient Current Technique (TCT) is a method for the investigation of silicon sensors. This method requires infrared light from a sub-ns pulsed laser to be focused to a μm-size spot and scanned across the polished cut edge of a sensor. Electron-hole pairs are generated along the light beam in the sensor. These charge carriers drift in the electric field and induce transient currents on the sensor electrodes. The current transients are analyzed as a function of the applied voltage, temperature, absorbed dose and position of the laser-light focus, in order to determine the the drift velocities, electric field and the charge collection in the strip sensor. In the scope of this work, a new edge-TCT setup is commissioned, a procedure for the polishing of the cut edge is implemented and a method to position the focus of the laser light with respect to the sensor is developed. First edge-TCT measurements are performed on non-irradiated, 285 μm thick n-type strip sensors, and the pulse shape and charge collection is studied under different conditions. Furthermore, the prompt current of the transients is extracted, which is the first step towards the determination of the electric field. A new method to measure the attenuation of light in silicon is tested on a non-irradiated sensor and on sensors irradiated with up to a 1 MeV neutron equivalent fluence of 1.14 x 10"1"5 cm"-"2, using laser light with a wavelength of 1052 nm.

  17. Optimized optical devices for edge-coupling-enabled silicon photonics platform

    Science.gov (United States)

    Png, Ching Eng; Ang, Thomas Y. L.; Ong, Jun Rong; Lim, Soon Thor; Sahin, Ezgi; Chen, G. F. R.; Tan, D. T. H.; Guo, Tina X.; Wang, Hong

    2018-02-01

    We present a library of high-performance passive and active silicon photonic devices at the C-band that is specifically designed and optimized for edge-coupling-enabled silicon photonics platform. These devices meet the broadband (100 nm), low-loss (= 25 Gb/s), and polarization diversity requirements (TE and TM polarization extinction ratio beam splitters (PBSs), and high-speed modulators are some of the devices within our library. In particular, we have designed and fabricated inverse taper fiber-to-waveguide edge couplers of tip widths ranging from 120 nm to 200 nm, and we obtained a low coupling loss of 1.80+/-0.28 dB for 160 nm tip width. To achieve polarization diversity operation for inverse tapers, we have experimentally realized different designs of polarization beam splitters (PBS). Our optimized PBS has a measured extinction ratio of <= 25 dB for both the quasiTE modes, and quasi-TM modes. Additionally, a broadband (100 nm) directional coupler with a 50/50 power splitting ratio was experimentally realized on a small footprint of 20×3 μm2 . Last but not least, high-speed silicon modulators with a range of carrier doping concentrations and offset of the PN junction can be used to optimise the modulation efficiency, and insertion losses for operation at 25 GHz.

  18. Zircaloy 4 ingots' industrial fabrication

    International Nuclear Information System (INIS)

    Leyt, A.

    1987-01-01

    The technology developed for the industrial fabrication of Zircaloy-4 ingots is presented. According to the results obtained: a) the homogeneity of the ingots is analyzed, regarding the distribution of components (tin, iron, chromium, oxygen) and Brinell hardness as a function of different types of charge: zirconium sponge-recycling alloy material, sponge of zirconium-alloy; b) the distribution of the same parameters as a function of production is also analyzed. (Author)

  19. Feasibility study on silicon doping using high temperature test engineering reactor

    International Nuclear Information System (INIS)

    Seki, Masaya; Takaki, Naoyuki; Goto, Minoru; Shimakawa, Satoshi

    2011-01-01

    The feasibility study on silicon doping using the High Temperature engineering Test Reactor (HTTR) is performed by numerical simulations. The HTTR is a High Temperature Gas-cooled Reactor (HTGR) situated at JAEA Oarai research and development center. It has a 30MW thermal power and the outlet coolant temperature is 950degC. The objective of this study is to evaluate the following issues, 1. The impact of loading Si-ingots into the core on the criticality, 2. The uniformity of the neutron capture reaction rate in Si-ingots, and 3. The production rate of silicon semiconductor. In this study, six Si-ingots are loaded into the irradiation area which is located in the peripheral region of the core. They are irradiated with rotation movement around the axial direction to obtain uniform neutron capture reaction rate in the radial direction. Additionally, the neutron filter, which is made of graphite containing boron, is used to obtain uniform neutron capture reaction rate in the axial direction. The evaluations were conducted by performing the HTTR whole core calculations with the Monte Carlo code MVP-2.0. In the calculations, several tally regions were defined on the Si-ingots to investigate the uniformity of the neutron capture reaction rate. As a result, loading the Si-ingots into the core causes negative reactivity by about 0.7%dk/k. Uniform neutron capture reaction rate of Si-ingot is obtained 98% in the radial and the axial direction. In case of the target of semiconductor resistivity is set to 50 Ωcm, the required irradiation time becomes 10 hours. The HTTR is able to produce silicon semiconductor of 540kg in one-time irradiation. This study was conducted as a joint research with JAEA, Nuclear Fuel Industries, LTD, Toyota Tsusho Corporation and Tokai University. (author)

  20. Flat-plate solar array project. Volume 3: Silicon sheet: Wafers and ribbons

    Science.gov (United States)

    Briglio, A.; Dumas, K.; Leipold, M.; Morrison, A.

    1986-01-01

    The primary objective of the Silicon Sheet Task of the Flat-Plate Solar Array (FSA) Project was the development of one or more low cost technologies for producing silicon sheet suitable for processing into cost-competitive solar cells. Silicon sheet refers to high purity crystalline silicon of size and thickness for fabrication into solar cells. Areas covered in the project were ingot growth and casting, wafering, ribbon growth, and other sheet technologies. The task made and fostered significant improvements in silicon sheet including processing of both ingot and ribbon technologies. An additional important outcome was the vastly improved understanding of the characteristics associated with high quality sheet, and the control of the parameters required for higher efficiency solar cells. Although significant sheet cost reductions were made, the technology advancements required to meet the task cost goals were not achieved.

  1. Recent developments in multi-wire fixed abrasive slicing technique (FAST). [for low cost silicon wafer production from ingots

    Science.gov (United States)

    Schmid, F.; Khattak, C. P.; Smith, M. B.; Lynch, L. D.

    1982-01-01

    Slicing is an important processing step for all technologies based on the use of ingots. A comparison of the economics of three slicing techniques shows that the fixed abrasive slicing technique (FAST) is superior to the internal diameter (ID) and the multiblade slurry (MBS) techniques. Factors affecting contact length are discussed, taking into account kerf width, rocking angle, ingot size, and surface speed. Aspects of blade development are also considered. A high concentration of diamonds on wire has been obtained in wire packs usd for FAST slicing. The material removal rate was found to be directly proportional to the pressure at the diamond tips.

  2. Application of neutron transmutation doping method to initially p-type silicon material.

    Science.gov (United States)

    Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

    2009-01-01

    The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

  3. Radiometric study of creep in ingot rolling

    International Nuclear Information System (INIS)

    Kubicek, P.; Zamyslovsky, Z.; Uherek, J.

    The radiometric study of creep during ingot rolling performed in the rolling mill of the Vitkovice Iron and Steel Works and the first results are described. Selected sites in 3 to 8 ton ingots were labelled with 2 to 3.7x10 5 Bq of 60 Co and after rolling into blocks, the transposition of the labelled sites of the ingots was investigated. The results indicate creep during rolling, local extension in certain sites under study and help to determine the inevitable bottom crop incurred in the forming. Finally, the requirements put on the radiometric apparatus for the next stages of technological research are presented. (author)

  4. Aerosol-assisted extraction of silicon nanoparticles from wafer slicing waste for lithium ion batteries.

    Science.gov (United States)

    Jang, Hee Dong; Kim, Hyekyoung; Chang, Hankwon; Kim, Jiwoong; Roh, Kee Min; Choi, Ji-Hyuk; Cho, Bong-Gyoo; Park, Eunjun; Kim, Hansu; Luo, Jiayan; Huang, Jiaxing

    2015-03-30

    A large amount of silicon debris particles are generated during the slicing of silicon ingots into thin wafers for the fabrication of integrated-circuit chips and solar cells. This results in a significant loss of valuable materials at about 40% of the mass of ingots. In addition, a hazardous silicon sludge waste is produced containing largely debris of silicon, and silicon carbide, which is a common cutting material on the slicing saw. Efforts in material recovery from the sludge and recycling have been largely directed towards converting silicon or silicon carbide into other chemicals. Here, we report an aerosol-assisted method to extract silicon nanoparticles from such sludge wastes and their use in lithium ion battery applications. Using an ultrasonic spray-drying method, silicon nanoparticles can be directly recovered from the mixture with high efficiency and high purity for making lithium ion battery anode. The work here demonstrated a relatively low cost approach to turn wafer slicing wastes into much higher value-added materials for energy applications, which also helps to increase the sustainability of semiconductor material and device manufacturing.

  5. Timing performances and edge effects of detectors worked from 6-in. silicon slices

    International Nuclear Information System (INIS)

    Aiello, S.; Anzalone, A.; Cardella, G.; Cavallaro, Sl.; De Filippo, E.; Di Pietro, A.; Femino, S.; Geraci, M.; Giustolisi, F.; Guazzoni, P.; Iacono Manno, M.; Lanzalone, G.; Lanzano, G.; Lo Nigro, S.; Musumarra, A.; Pagano, A.; Papa, M.; Pirrone, S.; Politi, G.; Porto, F.; Rizzo, F.; Sambataro, S.; Sperduto, M.L.; Sutera, C.; Zetta, L.

    1997-01-01

    Prototypes of new passivated implanted planar silicon detectors, obtained for the first time from 6 in. silicon slices, have been tested. The time and energy resolutions have been studied as a function of the type and energy of the detected particles, in order to test the performances of these detectors for time of flight measurements in the Chimera project. Some problems arising from edge effects observed in double-pad detectors have been solved by using a guard ring. (orig.)

  6. Production of High Quality Die Steels from Large ESR Slab Ingots

    Science.gov (United States)

    Geng, Xin; Jiang, Zhou-hua; Li, Hua-bing; Liu, Fu-bin; Li, Xing

    With the rapid development of manufacture industry in China, die steels are in great need of large slab ingot of high quality and large tonnage, such as P20, WSM718R and so on. Solidification structure and size of large slab ingots produced with conventional methods are not satisfied. However, large slab ingots manufactured by ESR process have a good solidification structure and enough section size. In the present research, the new slab ESR process was used to produce the die steels large slab ingots with the maximum size of 980×2000×3200mm. The compact and sound ingot can be manufactured by the slab ESR process. The ultra-heavy plates with the maximum thickness of 410 mm can be obtained after rolling the 49 tons ingots. Due to reducing the cogging and forging process, the ESR for large slab ingots process can increase greatly the yield and production efficiency, and evidently cut off product costs.

  7. Micro knife-edge optical measurement device in a silicon-on-insulator substrate.

    Science.gov (United States)

    Chiu, Yi; Pan, Jiun-Hung

    2007-05-14

    The knife-edge method is a commonly used technique to characterize the optical profiles of laser beams or focused spots. In this paper, we present a micro knife-edge scanner fabricated in a silicon-on-insulator substrate using the micro-electromechanical-system technology. A photo detector can be fabricated in the device to allow further integration with on-chip signal conditioning circuitry. A novel backside deep reactive ion etching process is proposed to solve the residual stress effect due to the buried oxide layer. Focused optical spot profile measurement is demonstrated.

  8. Development of advanced Czochralski Growth Process to produce low cost 150 KG silicon ingots from a single crucible for technology readiness

    Science.gov (United States)

    1981-01-01

    The goals in this program for advanced czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness are outlined. To provide a modified CG2000 crystal power capable of pulling a minimum of five crystals, each of approximately 30 kg in weight, 150 mm diameter from a single crucible with periodic melt replenishment. Crystals to have: resistivity of 1 to 3 ohm cm, p-type; dislocation density below 1- to the 6th power per cm; orientation (100); after growth yield of greater than 90%. Growth throughput of greater than 2.5 kg per hour of machine operation using a radiation shield. Prototype equipment suitable for use as a production facility. The overall cost goal is $.70 per peak watt by 1986. To accomplish these goals, the modified CG2000 grower and development program includes: (1) increased automation with a microprocessor based control system; (2) sensors development which will increase the capability of the automatic controls system, and provide technology transfer of the developed systems.

  9. Remelt Ingot Production Technology

    Science.gov (United States)

    Grandfield, J. F.

    The technology related to the production of remelt ingots (small ingots, sows and T-Bar) is reviewed. Open mold conveyors, sow casting, wheel and belt casting and VDC and HDC casting are described and compared. Process economics, capacity, product quality and process problems are listed. Trends in casting machine technology such as longer open mold conveyor lines are highlighted. Safety issues related to the operation of these processes are discussed. The advantages and disadvantages of the various machine configurations and options e.g. such as dry filling with the mold out of water and wet filling with the mold in water for open mould conveyors are discussed. The effect of mold design on machine productivity, mold cracking and mold life is also examined.

  10. Operation of arc heating furnace on manufacturing gigantic ingots and segregation of gigantic ingots

    International Nuclear Information System (INIS)

    Niimi, Takayasu; Okamura, Masayoshi

    1976-01-01

    The techniques and procedure for manufacturing gigantic ingots heavier than 200 t are described. Especially, practical results of an arc heating furnace which plays an important role in the procedure and segregation of gigantic ingots are discussed in detail. By appropriate operations of the arc heating furnance, hydrogen and phosphorus are kept unchanged, and oxygen and sulphur decrease to very low levels. Furthermore, the temperature can be accurately controlled. The application of multipour technique reduces segregation and its degree is dependent on kinds of steel. V-segregation and inverted V-segregation in steel deoxidized with carbon in vacuum seem to be very slight. (auth.)

  11. Development of the external cooling device of increase the productivity of neutron-transmutation-doped silicon semiconductor (NTD-Si) (Joint research)

    International Nuclear Information System (INIS)

    Hirose, Akira; Wada, Shigeru; Sasajima, Fumio; Kusunoki, Tsuyoshi; Kameyama, Iwao; Aizawa, Ryouji; Kikuchi, Naoyuki

    2007-01-01

    Neutron-Transmutation-Doped Silicon Semiconductor (hereinafter referred as 'NTD-Si') is the best semiconductor for the power device. The needs of NTD-Si increase recently in proportion to the popularization of hybrid-cars. A fission research reactor, which is a steady state neutron source, is being expected as the best device to meet the needs. So far, we have reconsidered the existing approach which is employed for NTD-Si production works at the research reactors JRR-3, JRR-4 and JMTR of JAEA so as to meet the needs. As one of the effective measures, we found out that the productivity can be increased by incorporating a new device to cool down radioactivity of irradiated silicon ingots at the place outside the main stream from the loading of silicon ingots to the withdrawal of irradiated ingots to the existing JRR-3 Uniformity Irradiation System. Consequently, we developed and installed the device (hereinafter referred as 'external cooling device'). After an ingot was irradiated once, it is turned over manually and irradiated again in order to irradiate the ingot uniformly. With the conventional system, it was necessary to wait the radioactivity of ingot decrease less than the permissible level with holding the ingot in the irradiation equipment. It was effective to shorten the waiting period by using an external cooling device for production increase of NTD-Si. It is expected that the productivity of NTD-Si will be increased by using the external cooling device. This report mentions the design of the external cooling device and verification between its design specifications and the performance of the device completed. (author)

  12. Development of low-cost silicon crystal growth techniques for terrestrial photovoltaic solar energy conversion

    Science.gov (United States)

    Zoutendyk, J. A.

    1976-01-01

    Because of the growing need for new sources of electrical energy, photovoltaic solar energy conversion is being developed. Photovoltaic devices are now being produced mainly from silicon wafers obtained from the slicing and polishing of cylindrically shaped single crystal ingots. Inherently high-cost processes now being used must either be eliminated or modified to provide low-cost crystalline silicon. Basic to this pursuit is the development of new or modified methods of crystal growth and, if necessary, crystal cutting. If silicon could be grown in a form requiring no cutting, a significant cost saving would potentially be realized. Therefore, several techniques for growth in the form of ribbons or sheets are being explored. In addition, novel techniques for low-cost ingot growth and cutting are under investigation.

  13. Towards solar grade silicon: Challenges and benefits for low cost photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Pizzini, Sergio [Ned Silicon Spa, Via Th. Edison 6, 60027 Osimo (Ancona) (Italy)

    2010-09-15

    It is well known that silicon in its various structural configurations (single crystal, multicrystalline, amorphous, micro-nanocrystalline) supplies almost 90% of the substrates used in the photovoltaic industry. It is also known, since years, that the photovoltaic (PV) industry shows a marked growth trend, which demanded and demands a continuous, huge increase of the bulk silicon supply in the order of 30%/yr. In order to fulfill their today- and future needs, many companies worldwide took the decision to start the installation of many thousand tons/year plants, most of them using the Siemens process, some of them using the MG route, to produce the so called solar grade (SG) silicon. The advantages of the Siemens process are well known, as it provides ultrapure silicon, directly usable for growing either single crystalline Czochralski ingots or multicrystalline ingots using the directional solidification (DS) technique. The disadvantages are its high energetic cost (a minimum of 120 kWH/kg) and the possible losses of chlorinated gases in the atmosphere, with possible severe environmental problems. The advantages of the MG route are still potential, as there is no commercially available production of solar silicon as yet, and rely on its reduced energetic costs (a maximum of 25-30 kWh/kg) for a feedstock directly usable for growing multicrystalline ingots using the DS technique. The drawbacks of silicon of MG origin are its larger concentration of metallic impurities, as compared with the Siemens one, the higher B and P content, and the potentially high carbon content. The aim of this paper is to deal with some of the problems encountered so far with the silicon of MG origin with respect to the metallic and non-metallic impurities content, as well as to propose technologically feasible solar grade feedstock specifications. (author)

  14. Kinetics of steel heavy ingot formation in dies of semicontinuous-casting machines

    International Nuclear Information System (INIS)

    Tsukerman, V.Ya.; Marchenko, I.K.

    1986-01-01

    Formation kinetics of round section ingot of up to 0.67 m in diameter was analyzed in dies of semicontinuous-casting machines on casting of the most usable assortment steels: medium-carbon low-alloyed and chromium-nickel stainless steels. It is established that solidification coefficient decreases in direct proportion to ingot diameter. Value of different-thickness ingot skin at die outlet is in direct proportion to a casted steel overheating temperature, ingot diameter and inversely proportional to the number and diameter of holes in a ladder nozzle and square root of ingot drawing rate

  15. Edge reconstruction effect in pristine and H-passivated zigzag silicon carbide nanoribbons.

    Science.gov (United States)

    Lou, Ping

    2011-10-14

    The edge reconstruction effect of the zigzag silicon carbide nanoribbons (zz SiC NRs) to a stable line of alternatively fused seven and five membered rings without and with H passivation have been studied using first principles density functional theory (DFT). The both side's edges of the pristine SiC are respectively terminated by Si and C atoms and are called the Si-edge and the C-edge, respectively. In the un-passivated systems, the C-edge reconstructed (Crc) could effectively lower the edge energy of the system, while the Si-edge reconstructed (Sirc) could raise the edge energy of the system. Thus, the Crc edge is the best edge for the edge reconstruction of the system, while the both edge reconstructed (brc) system is the metastability. Moreover, the brc system has a nonmagnetic metallic state, whereas the Crc system, as well as Sirc system, has a ferromagnetic metallic state. The edge reconstructed destroys the magnetic moment of the corresponding edge atoms. The magnetic moment arises from the unreconstructed zigzag edges. The pristine zz edge system has a ferrimagnetic metallic state. However, in the H-passivated systems, the unreconstructed zigzag edge (zz-H) is the best edge. The Crc-H system is the metastability. The Sirc-H system has only slightly higher energy than the Crc-H system, whereas the brc-H system of the pristine SiC NR has the highest edge energy. Thus, the H passivation would prevent the occurrence of edge reconstruction. Moreover, H passivation induces a metal-semiconductor transition in the zz and brc SiC NRs. Additionally, except for brc-H system which has non-magnetic semiconducting state, the zz-H, Crc-H, and Sirc-H systems have the magnetic state.

  16. Structural Transformations Versus Hard Particles Motion in the Brass Ingots

    Directory of Open Access Journals (Sweden)

    Wołczyński W.

    2017-12-01

    Full Text Available A mathematical method for the forecast of the type of structure in the steel static ingot has been recently developed. Currently, the method has been applied to structural zones prediction in the brass ingots obtained by the continuous casting. Both the temperature field and thermal gradient field have been calculated in order to predict mathematically the existence of some structural zones in the solidifying brass ingot. Particularly, the velocity of the liquidus isotherm movement and thermal gradient behavior versus solidification time have been considered. The analysis of the mentioned velocity allows the conclusion that the brass ingots can evince: chilled columnar grains-, (CC, fine columnar grains-, (FC, columnar grains-, (C, equiaxed grains zone, (E, and even the single crystal, (SC, situated axially. The role of the mentioned morphologies is analyzed to decide whether the hard particles existing in the brass ingots can be swallowed or rejected by the solid / liquid (s/l interface of a given type of the growing grains. It is suggested that the columnar grains push the hard particles to the end of a brass ingot during its continuous casting.

  17. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    KAUST Repository

    Frost, Thomas; Jahangir, Shafat; Stark, Ethan; Deshpande, Saniya; Hazari, Arnab Shashi; Zhao, Chao; Ooi, Boon S.; Bhattacharya, Pallab K.

    2014-01-01

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  18. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    KAUST Repository

    Frost, Thomas

    2014-08-13

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  19. Modelling of macrosegregation in steel ingots: benchmark validation and industrial application

    International Nuclear Information System (INIS)

    Li Wensheng; Shen Houfa; Liu Baicheng; Shen Bingzhen

    2012-01-01

    The paper presents the recent progress made by the authors on modelling of macrosegregation in steel ingots. A two-phase macrosegregation model was developed that incorporates descriptions of heat transfer, melt convection, solute transport, and solid movement on the process scale with microscopic relations for grain nucleation and growth. The formation of pipe shrinkage at the ingot top is also taken into account in the model. Firstly, a recently proposed numerical benchmark test of macrosegregation was used to verify the model. Then, the model was applied to predict the macrosegregation in a benchmark industrial-scale steel ingot. The predictions were validated against experimental data from the literature. Furthermore, macrosegregation experiment of an industrial 53-t steel ingot was performed. The simulation results were compared with the measurements. It is indicated that the typical macrosegregation patterns encountered in steel ingots, including a positively segregated zone in the hot top and a negative segregation in the bottom part of the ingot, are well reproduced with the model.

  20. Report on achievements in fiscal 1999. Research and development of immediately effective and innovative energy environment technology (Development of immediately effective and high-efficiency solar cell technology, development of high-quality ingot manufacturing technology, and development of high-efficiency cell making technology); 1999 nendo sokkoteki kakushinteki energy kankyo gijutsu kenkyu kaihatsu seika hokokusho. Sokkogata kokoritsu taiyo denchi gijutsu kaihatsu (kohinshitsu ingot seizo gijutsu kaihatsu / kohinshitsu cell ka gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Research and development has been made on improving quality of ingots for substrates, manufacturing high-quality thin type substrates, and making high-efficiency cells. This paper summarizes the achievements in fiscal 1999. In developing the high-quality ingot manufacturing technology, discussions were given on a method for assessing impurities and crystal defects by using the total reflection scattering type infrared tomography, and on the optimal solidifying and cooling conditions during the ingot manufacturing by using simulation calculation for solidification. As a result of analyses and discussions, such findings were found effective that the ingot should be solidified through making the solid-liquid interface shape flat, and the temperature falling rate in an ingot should be maintained constant. In developing the high-efficiency cell making technology, discussions were given on the optimal construction based on a simulation that assumes the light sealing structure using the RIE method, and on the optimal construction of polycrystalline silicon solar cells by using a device simulator (PCID). The important factors in achieving a conversion efficiency of 20% are the light sealing structure, surface passivation, and substrate thickness. (NEDO)

  1. Formation and growth of crystal defects in directionally solidified multicrystalline silicon for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ryningen, Birgit

    2008-07-01

    Included in this thesis are five publications and one report. The common theme is characterisation of directionally solidified multicrystalline silicon for solar cells. Material characterisation of solar cell silicon is naturally closely linked to both the casting process and to the solar cell processing: Many of the material properties are determined by the casting process, and the solar cell processing will to some extend determine which properties will influence the solar cell performance. Solar grade silicon (SoG-Si) made by metallurgical refining route and supplied by Elkem Solar was directionally solidified and subsequently characterised, and a simple solar cell process was applied. Except from some metallic co-precipitates in the top of the ingot, no abnormalities were found, and it is suggested that within the limits of the tests performed in this thesis, the casting and the solar cell processing, rather than the assumed higher impurity content, was the limiting factor. It is suggested in this thesis that the main quality problem in multicrystalline silicon wafers is the existence of dislocation clusters covering large wafer areas. The clusters will reduce the effect of gettering and even if gettering could be performed successfully, the clusters will still reduce the minority carrier mobility and hence the solar cell performance. It has further been pointed out that ingots solidified under seemingly equal conditions might have a pronounced difference in minority carrier lifetime. Ingots with low minority carrier lifetime have high dislocation densities. The ingots with the substantially higher lifetime seem all to be dominated by twins. It is also found a link between a higher undercooling and the ingots dominated by twins. It is suggested that the two types of ingots are subject to different nucleation and crystal growth mechanisms: For the ingots dominated by dislocations, which are over represented, the crystal growth is randomly nucleated at the

  2. Towards graphite-free hot zone for directional solidification of silicon

    Science.gov (United States)

    Dropka, Natasha; Buchovska, Iryna; Herrmann-Geppert, Iris; Klimm, Detlef; Kiessling, Frank M.; Degenhardt, Ulrich

    2018-06-01

    The reduction of SiC, Si3N4 and transition metals impurities in directionally solidified Si ingots poses one of the crucial challenges in the solar cells production. Particularly strong contamination comes from the graphite parts in the hot zone. Therefore, we selected three massive ceramic materials to replace graphite, developed the novel design of the crucible support and cover and compared the crystals grown in them with ingots from the standard graphite design. The experiments were performed for phosphorus n-doped silicon of G0 size. The ingots were compared with respect to O- and C-content, metal impurities, resistivity and lifetime. The superior performance of TiC relative to other ceramics was observed, particularly due to the lower concentration of substitutional carbon in Si ingot (up to 2.6 times) and the higher minority carrier lifetime of (up to 4.4 times) with narrow red zones.

  3. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 October 2003--30 September 2004

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Narayanan, M.

    2005-03-01

    The major objectives of this program are to continue the advancement of BP Solar polycrystalline silicon manufacturing technology. The program includes work in the following areas: Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations; developing wire saws to slice 100- m-thick silicon wafers on 290- m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100- m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology; facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

  4. Correlation of NTD-silicon rod and slice resistivity

    International Nuclear Information System (INIS)

    Wolverton, W.M.

    1984-01-01

    Neutron transmutation doped silicon is an electronic material which presents an opportunity to explore a high level of resistivity characterization. This is due to its excellent uniformity of dopant concentration. Appropriate resistivity measurements on the ingot raw material can be used as a predictor of slice resistivity. Correlation of finished NTD rod (i.e. ingot) resistivity to as-cut slice resistivity (after the sawing process) is addressed in the scope of this paper. Empirical data show that the shift of slice-center resistivity compared to rod-end center resistivity is a function of a new kind of rod radial-resistivity gradient. This function has two domains, and most rods are in domain ''A''. Correlating equations show how to significantly improve the prediction of slice resistivity of rods in domain ''A''. The new rod resistivity specifications have resulted in manufacturing economies in the production of NTD silicon slices

  5. Fiber-chip edge coupler with large mode size for silicon photonic wire waveguides.

    Science.gov (United States)

    Papes, Martin; Cheben, Pavel; Benedikovic, Daniel; Schmid, Jens H; Pond, James; Halir, Robert; Ortega-Moñux, Alejandro; Wangüemert-Pérez, Gonzalo; Ye, Winnie N; Xu, Dan-Xia; Janz, Siegfried; Dado, Milan; Vašinek, Vladimír

    2016-03-07

    Fiber-chip edge couplers are extensively used in integrated optics for coupling of light between planar waveguide circuits and optical fibers. In this work, we report on a new fiber-chip edge coupler concept with large mode size for silicon photonic wire waveguides. The coupler allows direct coupling with conventional cleaved optical fibers with large mode size while circumventing the need for lensed fibers. The coupler is designed for 220 nm silicon-on-insulator (SOI) platform. It exhibits an overall coupling efficiency exceeding 90%, as independently confirmed by 3D Finite-Difference Time-Domain (FDTD) and fully vectorial 3D Eigenmode Expansion (EME) calculations. We present two specific coupler designs, namely for a high numerical aperture single mode optical fiber with 6 µm mode field diameter (MFD) and a standard SMF-28 fiber with 10.4 µm MFD. An important advantage of our coupler concept is the ability to expand the mode at the chip edge without leading to high substrate leakage losses through buried oxide (BOX), which in our design is set to 3 µm. This remarkable feature is achieved by implementing in the SiO 2 upper cladding thin high-index Si 3 N 4 layers. The Si 3 N 4 layers increase the effective refractive index of the upper cladding near the facet. The index is controlled along the taper by subwavelength refractive index engineering to facilitate adiabatic mode transformation to the silicon wire waveguide while the Si-wire waveguide is inversely tapered along the coupler. The mode overlap optimization at the chip facet is carried out with a full vectorial mode solver. The mode transformation along the coupler is studied using 3D-FDTD simulations and with fully-vectorial 3D-EME calculations. The couplers are optimized for operating with transverse electric (TE) polarization and the operating wavelength is centered at 1.55 µm.

  6. Signal formation and active edge studies of 3D silicon detector technology

    CERN Document Server

    Kok, Angela

    3D detectors and devices with an ‘active edge’ were fabricated at the Stanford Nanofabrication Facility. Characteristics such as time response and edge sensitivity were studied. The induced signals from a 3D detector were studied using a fast, low-noise transimpedance amplifier. The rise time of the output signal obtained for a minimum ionising particle was faster than 4 ns at room temperature and 2 ns at 130K. This is in agreement with earlier calculations of 3D detectors that predicted the charge collection time to be between one to two ns. The first understanding of signal formation in a 3D detector was achieved by comparing measurements with a full system simulation. The differences in collection behaviour between electrons and holes were also understood and verified by measurement. Edge sensitivity was measured at the CERN SPS, using a high energy muon beam and a silicon telescope. The detector was measured to be efficient up to less than 4 μm from its physical edge. This confirmed that active edge ...

  7. Application of directional solidification ingot (LSD) in forging of PWR reactor vessel heads

    International Nuclear Information System (INIS)

    Benhamou, C.; Poitrault, I.

    1985-09-01

    Creusot-Loire Industrie uses this type of ingot for manufacture of Framatome 1300 and 1450 MW 4-loop PWR reactor vessel heads. This type of ingot offers a number advantages: improved internal soundness; greater chemical, structural and mechanical homogeneity of the finished part; simplified forging process. After a brief description of the pouring and solidification processes, this paper presents an analysis of the results of examinations performed on the prototype forging, as well as review of results obtained during industrial fabrication of dished heads from LSD ingots. The advantages of the LSD ingot over conventional ingots are discussed in conclusion

  8. First experimental results on active and slim-edge silicon sensors for XFEL

    International Nuclear Information System (INIS)

    Pancheri, L.; Benkechcache, M. E. A.; Betta, G.-F. Dalla; Xu, H.; Verzellesi, G.; Ronchin, S.; Boscardin, M.; Ratti, L.; Grassi, M.; Lodola, L.; Malcovati, P.; Vacchi, C.; Manghisoni, M.; Re, V.; Traversi, G.; Batignani, G.; Bettarini, S.; Casarosa, G.; Giorgi, M.; Forti, F.

    2016-01-01

    This work presents the first characterization results obtained on a pilot fabrication run of planar sensors, tailored for X-ray imaging applications at FELs, developed in the framework of INFN project PixFEL. Active and slim-edge p-on-n sensors are fabricated on n-type high-resistivity silicon with 450 μm thickness, bonded to a support wafer. Both diodes and pixelated sensors with a pitch of 110 μm are included in the design. Edge structures with different number of guard rings are designed to comply with the large bias voltage required by the application after accumulating an ionizing radiation dose as large as 1GGy. Preliminary results from the electrical characterization of the produced sensors, providing a first assessment of the proposed approach, are discussed. A functional characterization of the sensors with a pulsed infrared laser is also presented, demonstrating the validity of slim-edge configurations.

  9. Microdefects in neutron-transmutationaly doped silicon

    International Nuclear Information System (INIS)

    Vysotskaya, V.V.; Gorin, S.N.; Gres'kov, I.M.; Sobolev, N.A.; Shek, E.I.

    1988-01-01

    Using the method of X-ray topography and high-voltage electron microscopy, the nature of microdefects and character of their changes in neutron-transmutationaly doped silicon depending on the sample prehistory and heat treatment (HT) conditions are refined. It is shown that the microstructure of neutron-transmutationaly doped dislocation-free silicon crystals depends on conditions of ingot growth and post-radiation annealing environment. Annealing in chlorine-containing atmosphere removes microdefects (MD), although in vacuum, argon or air growing MD are preserved and new MD are formed

  10. Microdefects in neutron-transmutationaly doped silicon

    Energy Technology Data Exchange (ETDEWEB)

    Vysotskaya, V V; Gorin, S N; Gres' kov, I M; Sobolev, N A; Shek, E I

    1988-03-01

    Using the method of X-ray topography and high-voltage electron microscopy, the nature of microdefects and character of their changes in neutron-transmutationaly doped silicon depending on the sample prehistory and heat treatment (HT) conditions are refined. It is shown that the microstructure of neutron-transmutationaly doped dislocation-free silicon crystals depends on conditions of ingot growth and post-radiation annealing environment. Annealing in chlorine-containing atmosphere removes microdefects (MD), although in vacuum, argon or air growing MD are preserved and new MD are formed.

  11. XANES at the silicon k-edge in the kaolin-meta kaolin-geopolymer system

    International Nuclear Information System (INIS)

    Lima, F.T.; Silva, F.J.; Thaumaturgo, C.

    2005-01-01

    The geo polymer synthesis process optimization pretends to control the re logical and mechanical properties. The Al/Si ratio is the main variable that governs the geo polymerization process. This control occurs by changing temperature, pressure and chemical composition of the geo polymer. Thermal analysis (DTA/DSC), microscopic (SEM/TEM) and spectroscopic (FTIR, XRD, SAXS, EXAFS and XANES) techniques have been used to characterize these inorganic systems. In this work, XANES spectra of the k-edge silicon (Si) of the kaolin-meta kaolin-geo polymer are presented. The XANES spectra provides the oxidation state and structural information about the present studied atom: Silicon (Si). (author)

  12. "Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

    Science.gov (United States)

    Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

    2013-04-01

    During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

  13. Process and Information Tracking of Polycrystalline silicon Ingot for Solar Cell%铸锭多晶硅电池生产流程及信息跟踪

    Institute of Scientific and Technical Information of China (English)

    焦富强; 乔卉莹

    2014-01-01

    Si-based photovoltaic materials account for a large proportion in the field of new energy, in which polycrystalline silicon ingot for solar cell is the main type. Many procedures must be used for production of the poly-crystalline silicon solar cell, therefore, accurate recording and tracking information of stuff and procedures play an im-portant role in technical improvement. In this paper, process and information tracking of every procedure in produc-tion of polycrystalline silicon solar cell are discussed, and easy encountered problems in information tracking are ana-lyzed.%在新能源开发利用领域硅基光伏材料占有较大比重,其中铸锭多晶硅光伏电池是当前太阳能电池的主要品种。生产多晶硅电池需要经历众多的加工工序,准确有序记录和跟踪物料流向及各工序相关信息是工艺研究和技术改进的基础。就铸锭多晶硅电池片生产流程及各工序信息跟踪问题进行了论述,并对实施信息跟踪时易出现的问题进行了分析。

  14. An edge-TCT setup for the investigation of radiation damaged silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Feindt, Finn; Scharf, Christian; Garutti, Erika; Klanner, Robert [Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg (Germany)

    2016-07-01

    The aim of this work is to measure the electric field, drift velocity and charge collection of electrons and holes in radiation-damaged silicon strip sensors. For this purpose the edge Transient Current Technique (TCT) is employed. In contrast to conventional TCT, this method requires light from a sub-ns pulsed, infrared laser to be focused to a μm-size spot and scanned across the polished edge of a strip sensor. Thus electron-hole pairs are generated at a known depth in the sensor. Electrons and holes drift in the electric field and induce transient currents on the sensor electrodes. The current wave forms are analyzed as a function of the applied voltage and the position of the laser focus in order to determine the electric field, the drift velocities and the charge collection. In this talk the setup and the procedure for polishing the sensor edge are described, and first results, regarding the measurement of the laser light focus are presented.

  15. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 April 2002--30 September 2003 (Revised)

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Shea, S. P.

    2004-04-01

    The goal of BP Solar's Crystalline PVMaT program is to improve the present polycrystalline silicon manufacturing facility to reduce cost, improve efficiency, and increase production capacity. Key components of the program are: increasing ingot size; improving ingot material quality; improving material handling; developing wire saws to slice 100 ..mu..m thick silicon wafers on 200 ..mu..m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100 ..mu..m thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50 MW (annual nominal capacity) green-field Mega plant factory model template based on this new thin polycrystalline silicon technology; and facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

  16. Prediction of qualitative parameters of slab steel ingot using numerical modelling

    Directory of Open Access Journals (Sweden)

    M. Tkadlečková

    2016-07-01

    Full Text Available The paper describes the verification of casting and solidification of heavy slab ingot weighing 40 t from tool steel by means of numerical modelling with use of a finite element method. The pre-processing, processing and post-processing phases of numerical modelling are outlined. Also, the problems with determination of the thermodynamic properties of materials and with determination of the heat transfer between the individual parts of the casting system are discussed. The final porosity, macrosegregation and the risk of cracks were predicted. The results allowed us to use the slab ingot instead of the conventional heavy steel ingot and to improve the ratio, the chamfer and the external shape of the wall of the new design of the slab ingot.

  17. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Narayanan, M.

    2006-07-01

    The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

  18. Continuous Czochralski growth. Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

    Science.gov (United States)

    The improvement of growth rates using radiation shielding and investigation of the crucible melt interaction for improved yields were emphasized. Growth runs were performed from both 15 and 16 inch diameter crucibles, producing 30 and 37 kg ingots respectively. Efforts to increase the growth rate of 150 mm diameter ingots were limited by temperature instabilities believed to be caused by undesirable thermal convections in the larger melts. The radiation shield improved the growth rate somewhat, but the thermal instability was still evident, leading to nonround ingots and loss of dislocation-free structure. A 38 kg crystal was grown to demonstrate the feasibility of producing 150 kg with four growth cycles. After the grower construction phase, the Hamco microprocessor control system was interfaced to the growth facility, including the sensor for automatic control of seeding temperature, and the sensor for automatic shouldering. Efforts focused upon optimization of the seeding, necking, and shoulder growth automation programs.

  19. Sequential purification and crystal growth for the production of low cost silicon substrates. Quarterly technical progress report No. 1, 15 September 1979-31 December 1979

    Energy Technology Data Exchange (ETDEWEB)

    Liaw, M.; Secco, F.; Ingle, B.; Down, D.

    1980-02-01

    Over the past several years, Motorola's Materials Technology Laboratory (MTL), has been conducting several projects with goals directed at the production of high quality low cost silicon crystals. One of the projects which is being investigated is the direct purification of MG-Si. A unique characteristic of the approach used by this project is the use of a crystal puller to perform both purification and crystal growth. Sequential steps of purification were taken. By the completion of this series of purification, the purified MG-Si melt will be further purified by impurity redistribution using ingot pulling. The final purified silicon will be in an ingot form of desired dimensions for slicing into silicon sheets. The sequential steps of purification include: (1) leaching of MG-Si charge, (2) phase separation, (3) reactive gas treatment, (4) liquid-liquid extraction (called Slagging), and (5) purification by redistribution of impurities using ingot pulling. Progress on items (1) and (2) is reported. (WHK)

  20. Development in fiscal 1998 of silicon manufacturing process to rationalize energy usage. Surveys and researches on analysis of practical application of technology to manufacture silicon raw materials for solar cells; 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    With an objective to develop a mass production technology to manufacture silicon raw materials for solar cells, and assist its practical application, surveys and analyses were performed on trends in development of the related technologies, the problems therein , market trends and industrial trends thereof. This paper summarizes the achievements in fiscal 1998. The worldwide production amount of solar cells in 1998 is estimated to have achieved 150 MW, and the silicon consumption reached the level of 2,300 tons. In spite of the economic recession environment, there was no change in the expansion trend. In developing an SOG-Si mass production and manufacturing technology, construction of pilot plants for each process has been completed, and entered into the operation research phase. In developing a technology to manufacture high quality poly-crystalline silicon substrates, fabrication has been completed on the on-line ingot cutting equipment and the plasma heating equipment, and the stage is now in operation research of continuous electromagnetic casting process. The conversion efficiency of the poly-crystalline silicon solar cells is 14 to 16% at the mass production level, whose enhancement requires indispensably the improvement in quality of the substrate. Discussions are required on the ingot manufacturing conditions in coordination with improvement in the cell manufacturing technology. (NEDO)

  1. Numerical modelling of damage evolution in ingot forging

    DEFF Research Database (Denmark)

    Christiansen, Peter; Martins, Paulo A.F.; Bay, Niels Oluf

    2015-01-01

    The ingot forging process is numerically simulated applying both the Shima-Oyane porous plasticity model as a coupled damage model and the uncoupled normalized Cockcroft & Latham criterion. Four different cases including two different lower die angles (120º and 180º) and two different sizes of feed...... (400mm and 800mm) are analysed. Comparison of the simulation results with recommendations in literature on ingot forging, indicates the normalized Cockcroft & Latham damage criterion to be the most realistic of the two....

  2. Process Characterization of Electrical Discharge Machining of Highly Doped Silicon

    Science.gov (United States)

    2012-06-01

    of mechanism is shown in Figure 2 showing the wire feed panel where the spool of 5 (DiBitonto, et...Uno High efficiency boring of monocrystalline silicon ingot by EDM RAM Si (P-type) conductivity 0.01 ohm-cm 1mm Cu pipe electrode, rotating at

  3. Neutron transmutation doping of silicon in the SAFARI-1 research reactor

    International Nuclear Information System (INIS)

    Louw, P.A.; Robertson, D.G.; Strydom, W.J.

    1994-01-01

    The SAFARI-1 research reactor has operated with an exemplary safety record since commissioning in 1965. As part of a commercialisation effort a silicon irradiation facility (SILIRAD) has been installed in the poolside region of SAFARI-1 for Neutron Transmutation Doping (NTD) of silicon. Commissioning of the facility took place in the last quarter of 1992 with a series of trial irradiations which were performed in close collaboration with Wacker Chemitronic of Germany. A methodology for the determination of irradiation times necessary to achieve the target resistivities was verified on the basis of the results from the trial irradiations. All production activities are controlled by quality assurance procedures. To date some hundred and twelve silicon ingots (103 mm diameter) have been successfully irradiated on a commercial contract basis. The observed axial and radial variations in the resistivity profile of the ingots are very small compared to the profiles associated with conventionally doped silicon and small tolerances on target resistivities are attained. In this paper an overview of the design and characterisation of SILIRAD is given and the methods applied that ensure a quality product are described. Results obtained from trial and production irradiations are presented and the envisaged future modifications to SILIRAD discussed

  4. Neutron transmutation doping of silicon in the safari-1 research reactor

    International Nuclear Information System (INIS)

    Louw, P.A.; Robertson, D.G.; Strydom, W.J.

    1994-01-01

    The SAFARI-1 research reactor has operated with an exemplary safety record since commissioning in 1965. As part of a commercialisation effort a silicon irradiation facility (SILIRAD) has been installed in the poolside region of SAFARI-1 for Neutron Transmutation Doping (NTD) of silicon. Commissioning of the facility took place in the last quarter of 1992 with a series of trial irradiations which were performed in close collaboration the Wacker Chemitronic of Germany. A methodology for the determination of irradiation times necessary to achieve the target resistivities was verified on the basis of the results from the trial irradiations. All production activities are controlled by quality assurance procedures. To date some hundred and twelve silicon ingots (103 mm diameter) have been successfully irradiated on a commercial contract basis. The observed axial and radial variations in the resistivity profile of the ingots are very small compared to the profiles associated with conventionally doped silicon and small tolerances on target resistivities are attained. In this paper an overview of the design and characterisation of SILIRAD is given and the methods applied that ensure a quality product are described. Results obtained from trial and production irradiations are presented and the envisaged future modifications to SILIRAD discussed. 10 refs., 2 tabs., 6 figs

  5. Constrained/unconstrained solidification within the massive cast steel/iron ingots

    Directory of Open Access Journals (Sweden)

    W. S. Wołczyński

    2010-04-01

    Full Text Available Some properties of the ingot and especially of the steel forging ingots depend on the ratio of a columnar structure area to an equiaxed structure area created during solidification. The C-E transition is fundamental phenomenon that can be applied to characterize massive cast steel ingots produced by the casting house. The mentioned ratio is created spontaneously due to the rate of heat transfer towards the ceramic mould and then to the environment. The ceramic mould operates as an isolator. So that the thickness of the mould together with a growing solid fraction control the heat transfer and finally the ratio of the columnar structure area to the equiaxed structure area. At first the increase of heat accumulation within the ceramic mould is observed. Next the stationary state for heat transfer is created and finally a gentle abatement of the mould temperature associated with the heat output to the environment is expected. The steep thermal gradients correspond to the increase of heat accumulation in the ceramic mould. The steep thermal gradients are required to promote the columnar structure formation. The full heat accumulation in the mould corresponds well with the C-E transformation while the appearance of the moderate thermal gradients is referred to the gentle temperature abatement within the ceramic mould. The equiaxed structure is expected within this period of heat transfer behavior. The steep thermal gradients involve the activity of viscosity gradient in the liquid. As the result a sedimentary cones are formed at the bottom of the ingot. The C-E transformation is associated with competition between columnar and equaixed structure formation. At the end of competition a fully equiaxed structure is formed. The viscosity gradient is replaced by the thermophoresis which is the driving force for the deposition of some equiaxed grain layers onto the surface of C+E zone. The convection together with the gravity allow the layers to be uniform

  6. Study of edge effects in the breakdown process of p sup + on n-bulk silicon diodes

    CERN Document Server

    Militaru, O; Bozzi, C; Rold, M D; Dell'Orso, R; Dutta, S; Messineo, A; Mihul, A; Tonelli, G; Verdini, P G; Wheadon, R; Xie, Z

    2000-01-01

    The paper describes the role of the n sup + edge implants in the breakdown process of p sup + on n-bulk silicon diodes. Laboratory measurements and simulation studies are presented on a series of test structures aimed at an optimization of the design in the edge region. The dependence of the breakdown voltage on the geometrical parameters of the devices is discussed in detail. Design rules are extracted for the use of n sup + -layers along the scribe line to avoid surface conduction of current generated by the exposed edges. The effect of neutron irradiation has been studied up to a fluence of 1.8x10 sup 1 sup 5 cm sup - sup 2.

  7. Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

    Science.gov (United States)

    Maneuski, D.; Bates, R.; Blue, A.; Buttar, C.; Doonan, K.; Eklund, L.; Gimenez, E. N.; Hynds, D.; Kachkanov, S.; Kalliopuska, J.; McMullen, T.; O'Shea, V.; Tartoni, N.; Plackett, R.; Vahanen, S.; Wraight, K.

    2015-03-01

    Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.

  8. Study of hot cracking potential in a 6-ton steel ingot casting

    Science.gov (United States)

    Yang, Jing'an; Liu, Baicheng; Shen, Houfa

    2018-04-01

    A new hot cracking potential (HCP) criterion, for the appearance of hot tearing in steel ingot castings, is proposed. The maximum value of the first principal stress, divided by the dynamic yield strength in the brittle temperature range (BTR), was used to identify the HCP. Experiments were carried out on a 6-ton P91 steel ingot in which severe hot tearing was detected in the upper centerline. Another ingot, with a better heat preservation riser, and without hot tearing, was used for comparison. Samples were obtained from the area of the ingot body with hot tearing, and their morphologies were inspected by a X-ray high energy industrial computed tomography. The carbon and sulfur distributions around the hot tearing were characterized by an infrared spectrometry carbon and sulfur analyzer. High temperature mechanical properties were obtained by a Gleeble thermal simulation machine, under different strain rates. Then, thermo-mechanical simulations using an elasto-viscoplastic finite-element model were conducted to analyze the stress and strain evolution during ingot solidification. The results showed that the hot tearing area, which was rich in both carbon and sulfur, was under excessive tensile stress in the BTR, bearing the highest HCP.

  9. Modeling and Optimization of Direct Chill Casting to Reduce Ingot Cracking

    Energy Technology Data Exchange (ETDEWEB)

    Das, Subodh K.

    2006-01-09

    A successful four-year project on the modeling and optimization of direct chill (DC) casting to reduce ingot cracking has been completed. The project involved close collaboration among private industries, national laboratories, and universities. During the four-year project, 16 quarterly meetings brought the industrial partners and the research team together for discussion of research results and research direction. The industrial partners provided guidance, facilities, and experience to the research team. The research team went to two industrial plants to measure temperature distributions in commercial 60,000-lb DC casting ingot. The collaborative research resulted in several major accomplishments or findings: (1) Surface cracks were shown to be a result of hot tearing rather than cold cracks, as was thought before this project. These cracks form on the surface of a DC cast ingot just above the impingement point of the secondary cooling water jets. The cracks form along dendrite and grain boundaries, where solute and impurity elements are highly segregated. This understanding led to the development of a new technique for determining the mechanical properties in the nonequilibrium mushy zone of alloys and to thermodynamic predictions of the hot tearing propensity of DC cast ingots. (2) The apparent heat transfer coefficient (HTC) at the ingot surface in the water cooling region during DC casting was determined on the basis of temperature measurements in commercial DC casting ingots and an inverse heat transfer analysis. HTCs were calculated as a function of temperature and time, and covered the different regimes of heat transfer expected during DC casting. The calculated values were extrapolated to include the effect of water flow rate. The calculated HTCs had a peak at around 200 C, corresponding to the high heat transfer rates during nucleate boiling, and the profile was consistent with similar data published in the literature. (3) A new method, termed the

  10. Preventing light-induced degradation in multicrystalline silicon

    Science.gov (United States)

    Lindroos, J.; Boulfrad, Y.; Yli-Koski, M.; Savin, H.

    2014-04-01

    Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.

  11. Summary of performance of superconducting radio-frequency cavities built from CBMM niobium ingots

    Science.gov (United States)

    Ciovati, Gianluigi; Dhakal, Pashupati; Kneisel, Peter; Myneni, Ganapati R.

    2015-12-01

    Several Nb ingots have been provided by CBMM to Jefferson Lab since 2004 as part of an R&D collaboration aimed at evaluating the performance of superconducting radio-frequency cavities built from ingots with different purity, as a results of different ingot production processes. Approximately 32 multi- and single-cell cavities with resonant frequency between ˜1.3-2.3 GHz were built, treated and tested at 2 K at Jefferson Lab between 2004 and 2014. The average peak surface field achieved in cavities made of RRR˜260 and RRR˜100-150 ingots was (119 ± 4) mT and (100 ± 8) mT, respectively. Higher quality factor values at 2.0 K have been measured in medium-purity, compared to higher purity material.

  12. Shrinkage Porosity Criterion and Its Application to A 5.5 Ton Steel Ingot

    Directory of Open Access Journals (Sweden)

    Zhang C.

    2016-06-01

    Full Text Available In order to predict the distribution of shrinkage porosity in steel ingot efficiently and accurately, a criterion R√L and a method to obtain its threshold value were proposed. The criterion R√L was derived based on the solidification characteristics of steel ingot and pressure gradient in the mushy zone, in which the physical properties, the thermal parameters, the structure of the mushy zone and the secondary dendrite arm spacing were all taken into consideration. The threshold value of the criterion R√L was obtained with combination of numerical simulation of ingot solidification and total solidification shrinkage rate. Prediction of the shrinkage porosity in a 5.5 ton ingot of 2Cr13 steel with criterion R√L>0.21 m · °C1/2 · s−3/2 agreed well with the results of experimental sectioning. Based on this criterion, optimization of the ingot was carried out by decreasing the height-to-diameter ratio and increasing the taper, which successfully eliminated the centreline porosity and further proved the applicability of this criterion.

  13. Numerical simulation of convection and inclusion distribution during solidification in a heavy steel ingot

    International Nuclear Information System (INIS)

    Lin, Rui; Shen, Houfa

    2015-01-01

    Inclusions content in the steel ingot is an important index for homogeneity, and it becomes more serious for heavy steel ingots which are used for major equipment. However, knowledge about the formation of inclusion in steel ingot is limited, and modeling of inclusion distribution is still challenging, so it is of great significance to research the behavior of inclusion. In this paper, fluid flow during solidification is numerically simulated based on the equilibrium equations of mass, momentum and energy, and then inclusion distribution is modeled according to the Lagrangian Stokes trajectory method. The Results show that the inclusion distribution in the steel ingot is influenced by the flow pattern which is affected by the solidification pattern. Therefore, inclusion distribution could be controlled by the solidification front with the optimization of heat transfer condition such as the hot top design of steel ingot for the high quality steel production. (paper)

  14. Study on Fabrication of Ni-5 at.%W Tapes for Coated Conductors from Cylinder Ingots

    DEFF Research Database (Denmark)

    Ma, L.; Suo, H. L.; Yue, Zhao

    2015-01-01

    Ni-5 at.%W (Ni5W) tapes with a strong cube texture were fabricated using the RABiTS technique and by starting from cylindrical shaped ingots. In contrast to a conventional cuboid-shaped ingot, a cylinder shaped ingot has no anisotropy along the axial direction and the resulting tape will therefore...

  15. Summary of performance of superconducting radio-frequency cavities built from CBMM niobium ingots

    International Nuclear Information System (INIS)

    Ciovati, Gianluigi; Dhakal, Pashupati; Kneisel, Peter; Myneni, Ganapati R.

    2015-01-01

    Several Nb ingots have been provided by CBMM to Jefferson Lab since 2004 as part of an R&D collaboration aimed at evaluating the performance of superconducting radio-frequency cavities built from ingots with different purity, as a results of different ingot production processes. Approximately 32 multi- and single-cell cavities with resonant frequency between ∼1.3-2.3 GHz were built, treated and tested at 2 K at Jefferson Lab between 2004 and 2014. The average peak surface field achieved in cavities made of RRR∼260 and RRR∼100-150 ingots was (119 ± 4) mT and (100 ± 8) mT, respectively. Higher quality factor values at 2.0 K have been measured in medium-purity, compared to higher purity material

  16. A continuous Czochralski silicon crystal growth system

    Science.gov (United States)

    Wang, C.; Zhang, H.; Wang, T. H.; Ciszek, T. F.

    2003-03-01

    Demand for large silicon wafers has driven the growth of silicon crystals from 200 to 300 mm in diameter. With the increasing silicon ingot sizes, melt volume has grown dramatically. Melt flow becomes more turbulent as melt height and volume increase. To suppress turbulent flow in a large silicon melt, a new Czochralski (CZ) growth furnace has been designed that has a shallow melt. In this new design, a crucible consists of a shallow growth compartment in the center and a deep feeding compartment around the periphery. Two compartments are connected with a narrow annular channel. A long crystal may be continuously grown by feeding silicon pellets into the dedicated feeding compartment. We use our numerical model to simulate temperature distribution and velocity field in a conventional 200-mm CZ crystal growth system and also in the new shallow crucible CZ system. By comparison, advantages and disadvantages of the proposed system are observed, operating conditions are determined, and the new system is improved.

  17. Superconducting radio-frequency cavities made from medium and low-purity niobium ingots

    Science.gov (United States)

    Ciovati, Gianluigi; Dhakal, Pashupati; Myneni, Ganapati R.

    2016-06-01

    Superconducting radio-frequency cavities made of ingot niobium with residual resistivity ratio (RRR) greater than 250 have proven to have similar or better performance than fine-grain Nb cavities of the same purity, after standard processing. The high purity requirement contributes to the high cost of the material. As superconducting accelerators operating in continuous-wave typically require cavities to operate at moderate accelerating gradients, using lower purity material could be advantageous not only to reduce cost but also to achieve higher Q 0-values. In this contribution we present the results from cryogenic RF tests of 1.3-1.5 GHz single-cell cavities made of ingot Nb of medium (RRR = 100-150) and low (RRR = 60) purity from different suppliers. Cavities made of medium-purity ingots routinely achieved peak surface magnetic field values greater than 70 mT with an average Q 0-value of 2 × 1010 at 2 K after standard processing treatments. The performances of cavities made of low-purity ingots were affected by significant pitting of the surface after chemical etching.

  18. Numerical Model for Solidification Zones Selection in the Large Ingots

    Directory of Open Access Journals (Sweden)

    Wołczyński W.

    2015-12-01

    Full Text Available A vertical cut at the mid-depth of the 15-ton forging steel ingot has been performed by curtesy of the CELSA - Huta Ostrowiec plant. Some metallographic studies were able to reveal not only the chilled undersized grains under the ingot surface but columnar grains and large equiaxed grains as well. Additionally, the structural zone within which the competition between columnar and equiaxed structure formation was confirmed by metallography study, was also revealed. Therefore, it seemed justified to reproduce some of the observed structural zones by means of numerical calculation of the temperature field. The formation of the chilled grains zone is the result of unconstrained rapid solidification and was not subject of simulation. Contrary to the equiaxed structure formation, the columnar structure or columnar branched structure formation occurs under steep thermal gradient. Thus, the performed simulation is able to separate both discussed structural zones and indicate their localization along the ingot radius as well as their appearance in term of solidification time.

  19. Modelling the void deformation and closure by hot forging of ingot castings

    DEFF Research Database (Denmark)

    Christiansen, Peter; Hattel, Jesper Henri; Kotas, Petr

    2012-01-01

    by mechanical deformation. The aim of this paper is to analyze numerically if and to what degree the voids areclosed by the forging. Using the commercial simulation software ABAQUS, both simplified model ingots and physically manufactured ingots containing prescribed void distributions are deformed and analyzed....... The analysis concernsboth the void density change and the location of the voids in the part after deformation. The latter can be important for the subsequent reliability of the parts, for instance regarding fatigue properties. The analysis incorporates the Gurson yield criterion for metals containing voids...... and focuses on how the voids deform depending on their size and distribution in the ingot as well ashow the forging forces are applied....

  20. Production of a 304 stainless steel nuclear reactor forging from a very large electroslag refined ingot

    International Nuclear Information System (INIS)

    Watkins, E.J.; Tihansky, E.L.

    1986-01-01

    A four-loop, upper barrel flange forging for a nuclear reactor was produced from what the authors believe to be the largest 304H grade stainless steel electroslag refined (ESR) ingot ever refined. The ingot was refined in a 1524-mm-diameter, ingot withdrawal-type ESR furnace using a lime-bearing slag, low-frequency a-c power, and dry air protection. Five electrodes were remelted in order to produce the desired ingot weight. The ingot was subsequently forged in a five-step operation on a 6800-metric-ton press to produce the desired barrel flange configuration. Testing of the finished machined forging revealed excellent tensile ductility, excellent ultrasonic penetrability, and good chemical uniformity with no macrosegregation. Overall quality was judged to be superior to previously produced, conventionally melted forgings

  1. Electronic and local atomistic structure of MgSiO3 glass under pressure: a study of X-ray Raman scattering at the silicon and magnesium L-edges

    Science.gov (United States)

    Fukui, Hiroshi; Hiraoka, Nozomu

    2018-02-01

    We applied X-ray Raman scattering technique to MgSiO3 glass, a precursor to magnesium silicate melts, with respect to magnesium and silicon under high-pressure conditions as well as some polycrystalline phases of MgSiO3 at ambient conditions. We also performed ab initio calculations to interpret the X-ray Raman spectra. Experimentally obtained silicon L-edge spectra indicate that the local environment around silicon started changing at pressure above 10 GPa, where the electronic structure of oxygen is known to change. In contrast, the shape of the magnesium L-edge spectrum changed below 10 GPa. This indicates that the magnesium sites in MgSiO3 glass first distort and that the local structure around magnesium shows a wide variation under pressure. The framework structure consisting of silicon and oxygen changed above 10 GPa, where the coordination number of silicon was more than four. Our results imply that 6-oxygen-coordinated silicon was formed above 20 GPa.

  2. Material Properties of Laser-Welded Thin Silicon Foils

    Directory of Open Access Journals (Sweden)

    M. T. Hessmann

    2013-01-01

    Full Text Available An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1 laser spot welding with low constant feed speed, (2 laser line welding, and (3 keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.

  3. Effect of localized polycrystalline silicon properties on solar cell performance

    Science.gov (United States)

    Leung, D.; Iles, P. A.; Hyland, S.; Kachare, A.

    1984-01-01

    Several forms of polycrystalline silicon, mostly from cast ingots, (including UCP, SILSO and HEM) were studied. On typical slices, localized properties were studied in two ways. Small area (about 2.5 sq mm) mesa diodes were formed, and localized photovoltaic properties were measured. Also a small area (about .015 sq mm) light spot was scanned across the cells; the light spot response was calibrated to measure local diffusion length directly. Using these methods, the effects of grain boundaries, or of intragrain imperfections were correlated with cell performance. Except for the fine grain portion of SILSO, grain boundaries played only a secondary role in determining cell performance. The major factor was intra-grain material quality and it varied with position in ingots and probably related to solidification procedure.

  4. Numerical analysis on effect of annealing mc-Si ingot grown by DS process for PV application

    Science.gov (United States)

    Aravindan, G.; Srinivasan, M.; Aravinth, K.; Ramasamy, P.

    2017-10-01

    Silicon solar cells play a crucial role in Photo voltaic (PV) application. We have numerically investigated thermal stress and normal stress components (Sigma 11, Sigma 22, Sigma 33 and sigma 12) by using finite volume method. The maximum thermal stress has low value at the centre region for 900 K and 700 K annealing temperatures comparing all the cases. The maximum thermal stress at peripheral region is low for 700 K annealing compared to 900 K annealing. The annealing effect of mc-Si ingot normal stress components is discussed. At 700 K annealing temperature the normal stress in 11 and 33 direction has lower maximum and at the 900 K annealing temperature the normal stress in 22 and 12 direction has lower maximum.

  5. Effects of the ingot phase transition on microstructure and magnetic properties of CeNdFeB melt-spun ribbons

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xuchao [Division of Functional Materials Research, Central Iron and Steel Research Institute, Beijing 100081, China (China); College of Sciences, Northeastern University, Shenyang 110819 (China); Zhu, Minggang, E-mail: mgzhu@126.com [Division of Functional Materials Research, Central Iron and Steel Research Institute, Beijing 100081, China (China); Li, Wei; Zheng, Liyun; Guo, Zhaohui; Du, Xiao [Division of Functional Materials Research, Central Iron and Steel Research Institute, Beijing 100081, China (China); Du, An [College of Sciences, Northeastern University, Shenyang 110819 (China)

    2015-11-01

    The paper studies the phase transition of ingot with the composition (Ce{sub 50}Nd{sub 50}){sub 30}Fe{sub bal}Co{sub 4}Ga{sub 0.2}B{sub 0.92} after the annealing treatment at 1050 °C. The melt-spun ribbons which is prepared by the two treatment status ingots. The phase structure and microstructure morphologies of the ingots and melt-spun ribbons were analysed and observed by XRD and SEM. It was found that the grain size of the ribbons is on the nanometer scale. The EDS results show that there are four different phases in the ingot: (CeNd){sub 2}Fe{sub 14}B, α-Fe, Ce-rich phase and Nd-rich phase. After the annealing treatment, α-Fe, Ce-rich phase, and Nd-rich phase were obviously reduced and the contents of the main phase was significantly increased in the annealed ingot compared with the unanneal treatment ingot. The VSM results show that there is a peak waist in the ribbon which is prepared by the untreated ingot. Because the ingot is uneven, the ribbons may have the secondary phase, the Hcj is 8394 Oe. But the demagnetization curves of the ribbons, which is prepared by the annealed ingot, is relatively smooth and without the soft magnetic phase and the Hcj is 12,528 Oe, which is higher than the unanneal treatment ingot. We can know that the ingot with fine organization is the key factors to preparing high-performance ribbons.

  6. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  7. Superconducting radio-frequency cavities made from medium and low-purity niobium ingots

    International Nuclear Information System (INIS)

    Ciovati, Gianluigi; Dhakal, Pashupati; Myneni, Ganapati R

    2016-01-01

    Superconducting radio-frequency cavities made of ingot niobium with residual resistivity ratio (RRR) greater than 250 have proven to have similar or better performance than fine-grain Nb cavities of the same purity, after standard processing. The high purity requirement contributes to the high cost of the material. As superconducting accelerators operating in continuous-wave typically require cavities to operate at moderate accelerating gradients, using lower purity material could be advantageous not only to reduce cost but also to achieve higher Q 0 -values. In this contribution we present the results from cryogenic RF tests of 1.3–1.5 GHz single-cell cavities made of ingot Nb of medium (RRR = 100–150) and low (RRR = 60) purity from different suppliers. Cavities made of medium-purity ingots routinely achieved peak surface magnetic field values greater than 70 mT with an average Q 0 -value of 2 × 10 10 at 2 K after standard processing treatments. The performances of cavities made of low-purity ingots were affected by significant pitting of the surface after chemical etching. (paper)

  8. Solidification Segregation and Homogenization Behavior of 1Cr-1.25Mo-0.25V Steel Ingot

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Dong-Bae [Dae-gu Mechatronics and Materials Institute, Daegu (Korea, Republic of); Na, Young-Sang; Seo, Seong-Moon [Korea Institute of Materials Science, Changwon (Korea, Republic of); Lee, Je-Hyun [Changwon National University, Changwon (Korea, Republic of)

    2016-09-15

    As a first step to optimizing the homogenization heat treatment following high temperature upset forging, the solidification segregation and the homogenization behaviors of solute elements were quantitatively analyzed for 1Cr-1.25Mo-0.25V steel ingot by electron probe micro-analysis (EPMA). The random sampling approach, which was designed to generate continuous compositional profiles of each solute element, was employed to clarify the segregation and homogenization behaviors. In addition, ingot castings of lab-scale and a 16-ton-sized 1Cr-1.25Mo-0.25V steel were simulated using the finite element method in three dimensions to understand the size effect of the ingot on the microsegregation and its reduction during the homogenization heat treatment. It was found that the microsegregation in a large-sized ingot was significantly reduced by the promotion of solid state diffusion due to the extremely low cooling rate. On the other hand, from the homogenization point of view, increasing the ingot size causes a dramatic increase in the dendrite arm spacing, and hence the homogenization of microsegregation in a large-sized ingot appears to be practically difficult.

  9. Solar cell fabricated on welded thin flexible silicon

    Directory of Open Access Journals (Sweden)

    Hessmann Maik Thomas

    2015-01-01

    Full Text Available We present a thin-film crystalline silicon solar cell with an AM1.5 efficiency of 11.5% fabricated on welded 50 μm thin silicon foils. The aperture area of the cell is 1.00 cm2. The cell has an open-circuit voltage of 570 mV, a short-circuit current density of 29.9 mA cm-2 and a fill factor of 67.6%. These are the first results ever presented for solar cells on welded silicon foils. The foils were welded together in order to create the first thin flexible monocrystalline band substrate. A flexible band substrate offers the possibility to overcome the area restriction of ingot-based monocrystalline silicon wafers and the feasibility of a roll-to-roll manufacturing. In combination with an epitaxial and layer transfer process a decrease in production costs can be achieved.

  10. Analysis of internal crack in a six-ton P91 ingot

    Directory of Open Access Journals (Sweden)

    Jing-an Yang

    2016-05-01

    Full Text Available P91 is a new kind of heat-resistant and high-tensile steel. It can be extruded after ingot casting and can be widely used for different pipes in power plants. However, due to its mushy freezing characteristics, a lack of feeding in the ingot center often generates many defects, such as porosity and crack. A six-ton P91 ingot was cast and sliced, and a representative part of the longitudinal section was inspected in more detail. The morphology of crack-like defects was examined by X-ray high energy industrial CT and reconstructed by 3D software. There are five main portions of defects larger than 200 mm3, four of which are interconnected. These initiated from continuous liquid film, and then were torn apart by excessive tensile stress within the brittle temperature range (BTR. The 3D FEM analysis of thermo-mechanical simulation was carried out to analyze the formation of porosity and internal crack defects. The results of shrinkage porosity and Niyama values revealed that the center of the ingot suffers from inadequate feeding. Several criteria based on thermal and mechanical models were used to evaluate the susceptibility of hot crack formation. The Clyne and Davies’ criterion and Katgerman’s criterion successfully predicted the high hot crack susceptibility in the ingot center. Six typical locations in the longitudinal section had been chosen for analysis of the stresses and strains evolution during the BTR. Locations in the defects region showed the highest tensile stresses and relative high strain values, while other locations showed either low tensile stresses or low strain values. In conclusion, hot crack develops only when stress and strain exceed a threshold value at the same time during the BTR.

  11. Silicon Sheet Growth Development for the Large Area Sheet Task of the Low Cost Solar Array Project. Heat Exchanger Method - Ingot Casting Fixed Abrasive Method - Multi-Wire Slicing

    Science.gov (United States)

    Schmid, F.; Khattak, C. P.

    1978-01-01

    Solar cells fabricated from HEM cast silicon yielded up to 15% conversion efficiencies. This was achieved in spite of using unpurified graphite parts in the HEM furnace and without optimization of material or cell processing parameters. Molybdenum retainers prevented SiC formation and reduced carbon content by 50%. The oxygen content of vacuum cast HEM silicon is lower than typical Czochralski grown silicon. Impregnation of 45 micrometers diamonds into 7.5 micrometers copper sheath showed distortion of the copper layer. However, 12.5 micrometers and 15 micrometers copper sheath can be impregnated with 45 micrometers diamonds to a high concentration. Electroless nickel plating of wires impregnated only in the cutting edge showed nickel concentration around the diamonds. This has the possibility of reducing kerf. The high speed slicer fabricated can achieve higher speed and longer stroke with vibration isolation.

  12. Simulation of ingot casting processes at Deutsche Edelstahlwerke GmbH®

    International Nuclear Information System (INIS)

    Hartmann, L; Ernst, C; Klung, J-S

    2012-01-01

    To enhance the quality of tool steels it is necessary to analyse all stages of the production process. During the ingot- or continuous casting processes and the following solidification, material and geometry depending reactions cause defects such as macro segregations or porosities. In former times the trial and error approach, together with the experience and creativity of the steelworks engineers was used to improve the as-cast quality, with a high amount of test procedures and a high demand of research time and costs. Further development in software and algorithms has allowed modern simulation techniques to find their way into industrial steel production and casting-simulations are widely used to achieve an accurate prediction of the ingot quality. To improve the as-cast quality, several ingot casting processes of tool steels were studied at the R and D department of Deutsche Edelstahlwerke GmbH by using the numerical casting simulation software MAGMASOFT ® . In this paper some results extracted from the simulation software are shown and compared to experimental investigations.

  13. Fast determination of impurities in metallurgical grade silicon for photovoltaics by instrumental neutron activation analysis

    International Nuclear Information System (INIS)

    Hampel, J.; Boldt, F.M.; Gerstenberg, H.; Hampel, G.; Kratz, J.V.; Reber, S.; Wiehl, N.

    2011-01-01

    Standard wafer solar cells are made of near-semiconductor quality silicon. This high quality material makes up a significant part of the total costs of a solar module. Therefore, new concepts with less expensive so called solar grade silicon directly based on physiochemically upgraded metallurgical grade silicon are investigated. Metallurgical grade silicon contains large amounts of impurities, mainly transition metals like Fe, Cr, Mn, and Co, which degrade the minority carrier lifetime and thus the solar cell efficiency. A major reduction of the transition metal content occurs during the unidirectional crystallization due to the low segregation coefficient between the solid and liquid phase. A further reduction of the impurity level has to be done by gettering procedures applied to the silicon wafers. The efficiency of such cleaning procedures of metallurgical grade silicon is studied by instrumental neutron activation analysis (INAA). Small sized silicon wafers of approximately 200 mg with and without gettering step were analyzed. To accelerate the detection of transition metals in a crystallized silicon ingot, experiments of scanning whole vertical silicon columns with a diameter of approximately 1 cm by gamma spectroscopy were carried out. It was demonstrated that impurity profiles can be obtained in a comparably short time. Relatively constant transition metal ratios were found throughout an entire silicon ingot. This led to the conclusion that the determination of several metal profiles might be possible by the detection of only one 'leading element'. As the determination of Mn in silicon can be done quite fast compared to elements like Fe, Cr, and Co, it could be used as a rough marker for the overall metal concentration level. Thus, a fast way to determine impurities in photovoltaic silicon material is demonstrated. - Highlights: → We demonstrate a fast way to determine impurities in photovoltaic silicon by NAA. → We make first experiments of locally

  14. Research and Development of the Solidification of Slab Ingots from Special Tool Steels

    Directory of Open Access Journals (Sweden)

    Tkadlečková M.

    2017-09-01

    Full Text Available The paper describes the research and development of casting and solidification of slab ingots from special tool steels by means of numerical modelling using the finite element method. The pre-processing, processing and post-processing phases of numerical modelling are outlined. Also, problems with determining the thermophysical properties of materials and heat transfer between the individual parts of the casting system are discussed. Based on the type of grade of tool steel, the risk of final porosity is predicted. The results allowed to improve the production technology of slab ingots, and also to verify the ratio, the chamfer and the external/ internal shape of the wall of the new designed slab ingots.

  15. Microstructures and constituents of super-high strength aluminum alloy ingots made through LFEC process

    Directory of Open Access Journals (Sweden)

    WANG Shuang

    2007-11-01

    Full Text Available Ingots of a new super-high strength Al-Zn-Mg-Cu-Zr alloy were produced respectively by low frequency electromagnetic casting (LFEC and by conventional direct chill (DC casting process. Microstructure and constituents of the ingots were studied. The results indicated that the LFEC process significantly refines microstructure and constituents of the alloy, and to some extent, decreases the area (or volume fraction of constituents and eutectic structure precipitated at grain boundaries. But, no difference in the type of constituents was observed between LFEC and DC ingots. The results also showed LFEC process can improve the as-cast mechanical properties.

  16. Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor.

    Science.gov (United States)

    Ho, Hai Quan; Honda, Yuki; Motoyama, Mizuki; Hamamoto, Shimpei; Ishii, Toshiaki; Ishitsuka, Etsuo

    2018-05-01

    The p-type spherical silicon solar cell is a candidate for future solar energy with low fabrication cost, however, its conversion efficiency is only about 10%. The conversion efficiency of a silicon solar cell can be increased by using n-type silicon semiconductor as a substrate. This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell, in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a 'screw', an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles. A high temperature engineering test reactor (HTTR), which is located in Japan, was used as a reference reactor in this study. Neutronic calculations showed that the HTTR has a capability to produce about 40t/EFPY of 10Ωcm resistivity Si-particles for fabrication of the n-type spherical solar cell. Copyright © 2018 Elsevier Ltd. All rights reserved.

  17. Environmentally benign silicon solar cell manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S. [National Renewable Energy Lab., Golden, CO (United States); Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States); Menna, P. [National Agency for New Technologies Energy and Environment, Portici (Italy); Strebkov, D.S.; Pinov, A.; Zadde, V. [Intersolarcenter, Moscow (Russian Federation)

    1998-09-01

    The manufacturing of silicon devices--from polysilicon production, crystal growth, ingot slicing, wafer cleaning, device processing, to encapsulation--requires many steps that are energy intensive and use large amounts of water and toxic chemicals. In the past two years, the silicon integrated-circuit (IC) industry has initiated several programs to promote environmentally benign manufacturing, i.e., manufacturing practices that recover, recycle, and reuse materials resources with a minimal consumption of energy. Crystalline-silicon solar photovoltaic (PV) modules, which accounted for 87% of the worldwide module shipments in 1997, are large-area devices with many manufacturing steps similar to those used in the IC industry. Obviously, there are significant opportunities for the PV industry to implement more environmentally benign manufacturing approaches. Such approaches often have the potential for significant cost reduction by reducing energy use and/or the purchase volume of new chemicals and by cutting the amount of used chemicals that must be discarded. This paper will review recent accomplishments of the IC industry initiatives and discuss new processes for environmentally benign silicon solar-cell manufacturing.

  18. Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

    Science.gov (United States)

    Yoo, H. I.; Iles, P. A.; Tanner, D. P.

    1979-01-01

    Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

  19. Modeling and Optimization of Direct Chill Casting to Reduce Ingot Cracking

    Energy Technology Data Exchange (ETDEWEB)

    Das, S.K.; Ningileri, S.; Long, Z.; Saito, K.; Khraisheh, M.; Hassan, M.H.; Kuwana, K.; Han, Q.; Viswanathan, S.; Sabau, A.S.; Clark, J.; Hyrn, J. (ANL)

    2006-08-15

    Approximately 68% of the aluminum produced in the United States is first cast into ingots prior to further processing into sheet, plate, extrusions, or foil. The direct chill (DC) semi-continuous casting process has been the mainstay of the aluminum industry for the production of ingots due largely to its robust nature and relative simplicity. Though the basic process of DC casting is in principle straightforward, the interaction of process parameters with heat extraction, microstructural evolution, and development of solidification stresses is too complex to analyze by intuition or practical experience. One issue in DC casting is the formation of stress cracks [1-15]. In particular, the move toward larger ingot cross-sections, the use of higher casting speeds, and an ever-increasing array of mold technologies have increased industry efficiencies but have made it more difficult to predict the occurrence of stress crack defects. The Aluminum Industry Technology Roadmap [16] has recognized the challenges inherent in the DC casting process and the control of stress cracks and selected the development of 'fundamental information on solidification of alloys to predict microstructure, surface properties, and stresses and strains' as a high-priority research need, and the 'lack of understanding of mechanisms of cracking as a function of alloy' and 'insufficient understanding of the aluminum solidification process', which is 'difficult to model', as technology barriers in aluminum casting processes. The goal of this Aluminum Industry of the Future (IOF) project was to assist the aluminum industry in reducing the incidence of stress cracks from the current level of 5% to 2%. Decreasing stress crack incidence is important for improving product quality and consistency as well as for saving resources and energy, since considerable amounts of cast metal could be saved by eliminating ingot cracking, by reducing the scalping thickness of

  20. Investigation of the crystallization process of titanium alloy ingots produced by vacuum arc melting method

    International Nuclear Information System (INIS)

    Tetyukhin, V.V.; Kurapov, V.N.; Trubin, A.N.; Demchenko, M.V.; Lazarev, V.G.; Ponedilko, S.V.; Dubrovina, N.T.; Kurapova, L.A.

    1978-01-01

    The process of crystallization and hardening of the VT3-1 and VT9 titanium alloys ingots during the vacuum-arc remelting (VAR) has been studied. In order to investigate the kinetics of the hole shape changing and the peculiarities of the ingot formation during the VAR, the radiography method has been used. It is established that the VAR of the titanium alloy ingots is basically a continuous process. An intense heating of the liquid bath mirror and the availability of high temperature gradients in the hole are the typical features of the VAR process

  1. High performance superconducting radio frequency ingot niobium technology for continuous wave applications

    International Nuclear Information System (INIS)

    Dhakal, Pashupati; Ciovati, Gianluigi; Myneni, Ganapati R.

    2015-01-01

    Future continuous wave (CW) accelerators require the superconducting radio frequency cavities with high quality factor and medium accelerating gradients (≤20 MV/m). Ingot niobium cavities with medium purity fulfill the specifications of both accelerating gradient and high quality factor with simple processing techniques and potential reduction in cost. This contribution reviews the current superconducting radiofrequency research and development and outlines the potential benefits of using ingot niobium technology for CW applications

  2. Modelling of Damage During Hot Forging of Ingots

    DEFF Research Database (Denmark)

    Christiansen, Peter; Hattel, Jesper Henri; Bay, Niels

    2013-01-01

    Ductile damage modelling in the ingot forging process is discussed. Advantages and disadvantages of both coupled and uncoupled ductile damage models are presented. Some uncoupled damage models are examined in greater detail regarding their applicability to different processes, where hydrostatic...

  3. Large grain cavities from pure niobium ingot

    Science.gov (United States)

    Myneni, Ganapati Rao [Yorktown, VA; Kneisel, Peter [Williamsburg, VA; Cameiro, Tadeu [McMurray, PA

    2012-03-06

    Niobium cavities are fabricated by the drawing and ironing of as cast niobium ingot slices rather than from cold rolled niobium sheet. This method results in the production of niobium cavities having a minimum of grain boundaries at a significantly reduced cost as compared to the production of such structures from cold rolled sheet.

  4. Intensification of heating processes of ingots in top-fired pit furnaces

    International Nuclear Information System (INIS)

    Kotlyarevskij, E.M.; Bazhenov, A.V.; Zavarova, I.S.; Baboshin, V.M.; Ioffe, Ya.E.

    1978-01-01

    The soaking pits provided with only one upper burner are characterized by the non-uniformity of the temperature field. It is suggested to improve the gas-burner device and the smoke flue for obviating that draw-back. It is the application of new compositions of dry materials for building up the bottom (preventing its growth) and the rational arrangement of cold ingots of the 12Kh18N10T steel (with their bottom part widened upward) that allowed the bottom crops to be reduced by about 0.5% (abs. %), and the temperature at the end of rolling ingots to be increased by about 40 degrees. According to the temperature readings, the most representative point in the soaking pit has been determined. If the preheating process is carried out automatically in accordance with that representative point, the calculated rational modes of the rapid preheating of ingots may be realized, and the consumption of the conventional fuel may be reduced by about 3 to 5 kg/ton of steel

  5. A digital X-ray imaging system based on silicon strip detectors working in edge-on configuration

    Energy Technology Data Exchange (ETDEWEB)

    Bolanos, L. [CEADEN, Calle 30 502 e/ 5ta y 7ma Avenida, Playa, Ciudad Habana (Cuba); Boscardin, M. [IRST, Fondazione Bruno Kessler, Via Sommarive 18, Povo, 38100 Trento (Italy); Cabal, A.E. [CEADEN, Calle 30 502 e/ 5ta y 7ma Avenida, Playa, Ciudad Habana (Cuba); Diaz, M. [InSTEC, Ave. Salvador Allende esq. Luaces, Quinta de los Molinos, Ciudad Habana (Cuba); Grybos, P.; Maj, P. [Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Cracow (Poland); Prino, F. [Istituto Nazionale di Fisica Nucleare, Sezione di Torino, Via P. Giuria 1, 10125 Torino (Italy); Ramello, L. [Dipartimento di Scienze e Tecnologie Avanzate, Universita del Piemonte Orientale, Via T. Michel 11, 15100 Alessandria (Italy)], E-mail: luciano.ramello@mfn.unipmn.it; Szczygiel, R. [Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Cracow (Poland)

    2009-09-21

    We present the energy resolution and imaging performance of a digital X-ray imaging system based on a 512-strip silicon strip detector (SSD) working in the edge-on configuration. The SSDs tested in the system are 300 {mu}m thick with 1 or 2-cm-long strips and 100 {mu}m pitch. To ensure a very small dead area of the SSD working in edge-on configuration, the detector is cut perpendicular to the strips at a distance of only 20 {mu}m from the end of the strips. The 512-strip silicon detector is read out by eight 64-channel integrated circuits called DEDIX [Grybos et al., IEEE Trans. Nucl. Sci. NS-54 (2007) 1207]. The DEDIX IC operates in a single photon counting mode with two independent amplitude discriminators per channel. The readout electronic channel connected to a detector with effective input capacitance of about 2 pF has an average equivalent noise charge (ENC) of about 163 el. rms and is able to count 1 Mcps of average rate of input pulses. The system consisting of 512 channels has an excellent channel-to-channel uniformity-the effective threshold spread calculated to the charge-sensitive amplifier inputs is 12 el. rms (at one sigma level). With this system a few test images of a phantom have been taken in the 10-30 keV energy range.

  6. Evaluation of Metallurgical Quality of Master Heat IN-713C Nickel Alloy Ingots

    Directory of Open Access Journals (Sweden)

    Binczyk F.

    2012-12-01

    Full Text Available The paper presents the results of evaluation of the metallurgical quality of master heat ingots and of the identification of non-metallic inclusions (oxides of Al., Zr, Hf, Cr, etc., which have been found in the shrinkage cavities formed in these ingots. The inclusions penetrate into the liquid alloy, and on pouring of mould are transferred to the casting, especially when the filtering system is not sufficiently effective. The specific nature of the melting process of nickel and cobalt alloys, carried out in vacuum induction furnaces, excludes the possibility of alloy refining and slag removal from the melt surface. Therefore, to improve the quality of castings (parts of aircraft engines, it is so important to evaluate the quality of ingots before charging them into the crucible of an induction furnace. It has been proved that one of the methods for rapid quality evaluation is an ATD analysis of the sample solidification process, where samples are taken from different areas of the master heat ingot. The evaluation is based on a set of parameters plotted on the graph of the dT/dt derivative curve during the last stage of the solidification process in a range from TEut to Tsol.

  7. Evaluation of Metallurgical Quality of Master Heat IN-713C Nickel Alloy Ingots

    Directory of Open Access Journals (Sweden)

    F. Binczyk

    2012-12-01

    Full Text Available The paper presents the results of evaluation of the metallurgical quality of master heat ingots and of the identification of non-metallic inclusions (oxides of Al., Zr, Hf, Cr, etc., which have been found in the shrinkage cavities formed in these ingots. The inclusions penetrate into the liquid alloy, and on pouring of mould are transferred to the casting, especially when the filtering system is not sufficiently effective. The specific nature of the melting process of nickel and cobalt alloys, carried out in vacuum induction furnaces,excludes the possibility of alloy refining and slag removal from the melt surface. Therefore, to improve the quality of castings (parts of aircraft engines, it is so important to evaluate the quality of ingots before charging them into the crucible of an induction furnace. It has been proved that one of the methods for rapid quality evaluation is an ATD analysis of the sample solidification process, where samples are taken from different areas of the master heat ingot. The evaluation is based on a set of parameters plotted on the graph of the dT/dt derivative curve during the last stage of the solidification process in a range from TEut to Tsol.

  8. Low temperature spalling of silicon: A crack propagation study

    Energy Technology Data Exchange (ETDEWEB)

    Bertoni, Mariana; Uberg Naerland, Tine; Stoddard, Nathan; Guimera Coll, Pablo

    2017-06-08

    Spalling is a promising kerfless method for cutting thin silicon wafers while doubling the yield of a silicon ingot. The main obstacle in this technology is the high total thickness variation of the spalled wafers, often as high as 100% of the wafer thickness. It has been suggested before that a strong correlation exists between low crack velocities and a smooth surface, but this correlation has never been shown during a spalling process in silicon. The reason lies in the challenge associated to measuring such velocities. In this contribution, we present a new approach to assess, in real time, the crack velocity as it propagates during a low temperature spalling process. Understanding the relationship between crack velocity and surface roughness during spalling can pave the way to attain full control on the surface quality of the spalled wafer.

  9. Fiscal 2000 achievement report. Development of energy use rationalization-oriented silicon manufacturing process (Development of silicon substrate manufacturing technology for high-quality solar cell); 2000 nendo shin energy sangyo gijutsu sogo kaihatsu kiko kyodo kenkyu gyomu seika hokokusho. Energy shiyo gorika silicon seizo process kaihatsu (Kohinshitsu taiyodenchiyou silicon kiban seizo gijutsu no kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Research and development was conducted for enhancing productivity and energy conservation by rendering continuous and automatic the electromagnetic casting process for manufacturing polycrystalline silicon substrates for solar cells. In the manufacture of ingots for substrates by continuous electromagnetic casting, the chuck type system for feeding power to the melt plasma was replaced by a roller type system, and the power feeding position was moved to the high temperature region. Also, an on-line ingot slicing technique was established. In the manufacture of substrates at a slicing rate of 300 {mu}m/minute, productivity of 115,000 wafers/month, yield of 98%, and thickness tolerance of 30 {mu}m were achieved. A high-speed cleaning technique was developed using a jet stream, by which the cleaning time was reduced to 5 minutes and the slurry recovery rate was elevated to 95%. Based on these, substrate-related costs in the case of 100 MW/year production was calculated, which resulted in a cost of 98.8 yen/wafer (target: 103.3 yen/wafer) for manufacturing 15 cm square substrates from ingots and in a 15 cm square substrate slicing and cleaning cost of 135.1 yen/wafer (target: 135.4 yen/wafer). (NEDO)

  10. Effect of vacuum arc melting/casting parameters on shrinkage cavity/piping of austenitic stainless steel ingot

    International Nuclear Information System (INIS)

    Kamran, J.; Feroz, M.; Sarwar, M.

    2009-01-01

    Shrinkage cavity/piping at the end of the solidified ingot of steels is one of the most common casting problem in 316L austenitic stainless steel ingot, when consumable electrode is melted and cast in a water-cooled copper mould by vacuum arc re-melting furnace. In present study an effort has been made to reduce the size of shrinkage cavity/ piping by establishing the optimum value of hot topping process parameters at the end of the melting process. It is concluded that the shrinkage cavity/piping at the top of the solidified ingot can be reduced to minimum by adjusting the process parameters particularly the melting current density. (author)

  11. Effects of silicon cross section and neutron spectrum on the radial uniformity in neutron transmutation doping.

    Science.gov (United States)

    Kim, Haksung; Ho Pyeon, Cheol; Lim, Jae-Yong; Misawa, Tsuyoshi

    2012-01-01

    The effects of silicon cross section and neutron spectrum on the radial uniformity of a Si-ingot are examined experimentally with various neutron spectrum conditions. For the cross section effect, the numerical results using silicon single crystal cross section reveal good agreements with experiments within relative difference of 6%, whereas the discrepancy is approximately 20% in free-gas cross section. For the neutron spectrum effect, the radial uniformity in hard neutron spectrum is found to be more flattening than that in soft spectrum. Copyright © 2011 Elsevier Ltd. All rights reserved.

  12. Design and burn-up analyses of new type holder for silicon neutron transmutation doping.

    Science.gov (United States)

    Komeda, Masao; Arai, Masaji; Tamai, Kazuo; Kawasaki, Kozo

    2016-07-01

    We have developed a new silicon irradiation holder with a neutron filter to increase the irradiation efficiency. The neutron filter is made of an alloy of aluminum and B4C particles. We fabricated a new holder based on the results of design analyses. This filter has limited use in applications requiring prolonged use due to a decrease in the amount of (10)B in B4C particles. We investigated the influence of (10)B reduction on doping distribution in a silicon ingot by using the Monte Carlo Code MVP. Copyright © 2016 Elsevier Ltd. All rights reserved.

  13. Formation of non-metallic inclusions and the possibility of their removal during ingot casting

    OpenAIRE

    Ragnarsson, Lars

    2010-01-01

    The present study was carried out to investigate the formation and evolution of non-metallic inclusions during ingot casting. Emphasize have been on understanding the types of inclusions formed and developed through the casting process and on the development of already existing inclusions carried over from the ladle during casting. Industrial experiments carried on at Uddeholm Tooling together with laboratory work and Computational Fluid Dynamics (CFD) simulations. Ingots of 5.8 tons have bee...

  14. K- and L-edge X-ray absorption spectrum calculations of closed-shell carbon, silicon, germanium, and sulfur compounds using damped four-component density functional response theory.

    Science.gov (United States)

    Fransson, Thomas; Burdakova, Daria; Norman, Patrick

    2016-05-21

    X-ray absorption spectra of carbon, silicon, germanium, and sulfur compounds have been investigated by means of damped four-component density functional response theory. It is demonstrated that a reliable description of relativistic effects is obtained at both K- and L-edges. Notably, an excellent agreement with experimental results is obtained for L2,3-spectra-with spin-orbit effects well accounted for-also in cases when the experimental intensity ratio deviates from the statistical one of 2 : 1. The theoretical results are consistent with calculations using standard response theory as well as recently reported real-time propagation methods in time-dependent density functional theory, and the virtues of different approaches are discussed. As compared to silane and silicon tetrachloride, an anomalous error in the absolute energy is reported for the L2,3-spectrum of silicon tetrafluoride, amounting to an additional spectral shift of ∼1 eV. This anomaly is also observed for other exchange-correlation functionals, but it is seen neither at other silicon edges nor at the carbon K-edge of fluorine derivatives of ethene. Considering the series of molecules SiH4-XFX with X = 1, 2, 3, 4, a gradual divergence from interpolated experimental ionization potentials is observed at the level of Kohn-Sham density functional theory (DFT), and to a smaller extent with the use of Hartree-Fock. This anomalous error is thus attributed partly to difficulties in correctly emulating the electronic structure effects imposed by the very electronegative fluorines, and partly due to inconsistencies in the spurious electron self-repulsion in DFT. Substitution with one, or possibly two, fluorine atoms is estimated to yield small enough errors to allow for reliable interpretations and predictions of L2,3-spectra of more complex and extended silicon-based systems.

  15. Multi-objective optimization of die geometry in ingot forging

    DEFF Research Database (Denmark)

    Christiansen, Peter; Martins, Paulo A.F.; Bay, Niels

    2014-01-01

    The soundness of an ingot after hot forging with different V-shaped lower dies is evaluated using finite element simulations.Two different modelling approaches that make use of uncoupled ductile damage and coupled ductile damage based on porousplasticity are employed. It is shown that the two...

  16. Correlation between impurities, defects and cell performance in semicrystalline silicon

    International Nuclear Information System (INIS)

    Doolittle, W.A.; Rohatgi, A.

    1990-01-01

    This paper reports that an in-depth analysis of Solarex CDS semicrystalline silicon has been performed and correlations between the efficiency and impurities, and defects present in the material have been made. Comparisons were made between cell performance and variations in interstitial oxygen, substitutional carbon, grain size, etch pit density, and trap location as a function of position in the ingot. The oxygen concentration was found to decrease with increasing distance from the bottom of the ingot while the carbon concentration as well as average grain size was found to increase. The best cell performance was obtained on wafers with minimum oxygen and maximum carbon (top). No correlation was found between etch pit density and cell performance. DLTS and JVT measurements revealed that samples with higher oxygen content (bottom) gave lower cell performance due to a large number of distributed states, possibly due to extended defects like oxygen precipitates. Low oxygen samples (top) showed predominately discrete states, improved cell performance and a doping dependent average trap density

  17. Rayleigh Number Criterion for Formation of A-Segregates in Steel Castings and Ingots

    DEFF Research Database (Denmark)

    Rad, M. Torabi; Kotas, Petr; Beckermann, C.

    2013-01-01

    A Rayleigh number-based criterion is developed for predicting the formation of A-segregates in steel castings and ingots. The criterion is calibrated using available experimental data for ingots involving 27 different steel compositions. The critical Rayleigh number above which A-segregates can b......, the primary reason for this over-prediction is persumed to be the presence of a central zone of equiaxed grains in the casting sections. A-segregates do not form when the grain structure is equiaxed. © The Minerals, Metals & Materials Society and ASM International 2013...

  18. Magnetic flow control in growth and casting of photovoltaic silicon: Numerical and experimental results

    Science.gov (United States)

    Poklad, A.; Pal, J.; Galindo, V.; Grants, I.; Heinze, V.; Meier, D.; Pätzold, O.; Stelter, M.; Gerbeth, G.

    2017-07-01

    A novel, vertical Bridgman-type technique for growing multi-crystalline silicon ingots in an induction furnace is described. In contrast to conventional growth, a modified setup with a cone-shaped crucible and susceptor is used. A detailed numerical simulation of the setup is presented. It includes a global thermal simulation of the furnace and a local simulation of the melt, which aims at the influence of the melt flow on the temperature and concentration fields. Furthermore, seeded growth of cone-shaped Si ingots using either a monocrystalline seed or a seed layer formed by pieces of poly-Si is demonstrated and compared to growth without seeds. The influences of the seed material on the grain structure and the dislocation density of the ingots are discussed. The second part addresses model experiments for the Czochralski technique using the room temperature liquid metal GaInSn. The studies were focused on the influence of a rotating and a horizontally static magnetic field on the melt flow and the related heat transport in crucibles being heated from bottom and/or side, and cooled by a crystal model covering about 1/3 of the upper melt surface.

  19. The characterization of high quality multicrystalline silicon by the electron beam induced current method

    International Nuclear Information System (INIS)

    Chen, J; Sekiguchi, T; Nara, S; Yang, D

    2004-01-01

    Multicrystalline silicon (mc-Si) manufactured by a multi-stage solidification control casting method has been characterized by the electron beam induced current (EBIC) method. The average diffusion length of the ingot was over 250 μm, which was much longer than that of conventional mc-Si. The EBIC study revealed that the electrical activities of grain boundaries (GBs) varied with the ingot position due to the impurity contamination level. The main impurity detected was iron. The concentration of iron in the central position was much lower than that at the bottom and top positions. GBs in the central position showed no significant EBIC contrast at 300 K, suggesting low contamination level. GBs in the top and bottom positions, however, showed strong EBIC contrast at 300 K, suggesting high contamination level. At 100 K, a denuded zone with bright contrast developed around GBs in the top and bottom positions. The existence of the denuded zone suggested that impurities were gettered at the GBs. It was considered that the variation of the diffusion length in the ingot was related to the variation of recombination activities of GBs in the different positions, which mainly depended on the impurity contamination

  20. The Influence of Impurities in Feed Ingots on the Quality of Castings Made from Nickel Superalloy IN-713C

    Directory of Open Access Journals (Sweden)

    Binczyk F.

    2013-12-01

    Full Text Available The paper presents the results of research on the impact of impurities in the feed ingots (master heat on the precipitation of impurities in the ATD thermal analysis probe castings. This impurities occur mostly inside shrinkage cavities and in interdendritic space. Additionally, insufficient filtration of liquid alloy during pouring promotes the transfer of impurities into the casting. The technology of melting superalloys in vacuum furnace prevents the removal of slag from the surface of molten metal. Because of that, the effective method of quality assessment of feed ingots in order to evaluate the existence of impurities is needed. The effectiveness of ATD analysis in evaluation of purity of feed ingots was researched. In addition the similarities of non-metallic inclusions in feed ingots and in castings were observed.

  1. Ingot formation using uranium dendrites recovered by electrolysis in LiCl-KCl-PuCl3-UCl3 melt

    International Nuclear Information System (INIS)

    Mineo Fukushima; Akira Nakayoshi; Shinichi Kitawaki; Masaki Kurata; Noboru Yahagi

    2008-01-01

    Products on solid cathodes recovered by the metal pyrochemical processing were processed to obtain uranium ingot. Studies on process conditions of uranium formation, assay recovered uranium products and by-products and evaluation of mass balance were carried out. In these tests, it is confirmed that uranium ingots can be obtained with heating the products more than melting temperature of metal uranium under atmospheric pressure because adhered salt cover the uranium not to oxidize it during uranium cohering. Covered salt can be removed after ingot formation. Inside the ingot, there were a lump of uranium and dark brown colored dross was observed. Material balance of uranium is 77 ∼ 96%, that of plutonium is 71 ∼ 109%, and that of americium that is a volatile substance more than uranium and plutonium become 79 ∼ 119%. Volatilization of americium is very small under the condition of high temperature. (authors)

  2. Cost of Czochralski wafers as a function of diameter

    Science.gov (United States)

    Leipold, M. H.; Radics, C.; Kachare, A.

    1980-02-01

    The impact of diameter in the range of 10 to 15 cm on the cost of wafers sliced from Czochralski ingots was analyzed. Increasing silicon waste and decreasing ingot cost with increasing ingot size were estimated along with projected costs. Results indicate a small but continuous decrease in sheet cost with increasing ingot size in this size range. Sheet costs including silicon are projected to be $50 to $60/sq m (1980 $) depending upon technique used.

  3. Physical modeling and numerical simulation of V-die forging ingot with central void

    DEFF Research Database (Denmark)

    Christiansen, Peter; Hattel, Jesper Henri; Bay, Niels

    2014-01-01

    Numerical simulation and physical modeling performed on small-scale ingots made from pure lead, having a hole drilled through their centerline to mimic porosity, are utilized to characterize the deformation mechanics of a single open die forging compression stage and to identify the influence...... of the lower V-die angle on porosity closure and forging load requirements of large cast ingots. Results show that a lower V-die angle of 120 provides the best closure of centerline porosity without demanding the highest forging loads or developing unreasonably asymmetric shapes that may create difficulties...... in multi-stage open die forging procedures....

  4. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, J.; Berenschot, Johan W.; Maury, P.A.; Jansen, Henricus V.

    2005-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily

  5. On the Modeling of Thermal Radiation at the Top Surface of a Vacuum Arc Remelting Ingot

    Science.gov (United States)

    Delzant, P.-O.; Baqué, B.; Chapelle, P.; Jardy, A.

    2018-06-01

    Two models have been implemented for calculating the thermal radiation emitted at the ingot top in the VAR process, namely, a crude model that considers only radiative heat transfer between the free surface and electrode tip and a more detailed model that describes all radiative exchanges between the ingot, electrode, and crucible wall using a radiosity method. From the results of the second model, it is found that the radiative heat flux at the ingot top may depend heavily on the arc gap length and the electrode radius, but remains almost unaffected by variations of the electrode height. Both radiation models have been integrated into a CFD numerical code that simulates the growth and solidification of a VAR ingot. The simulation of a Ti-6-4 alloy melt shows that use of the detailed radiation model leads to some significant modification of the simulation results compared with the simple model. This is especially true during the hot-topping phase, where the top radiation plays an increasingly important role compared with the arc energy input. Thus, while the crude model has the advantage of its simplicity, use of the detailed model should be preferred.

  6. Solidification Mapping of a Nickel Alloy 718 Laboratory VAR Ingot

    Science.gov (United States)

    Watt, Trevor J.; Taleff, Eric M.; Lopez, Felipe; Beaman, Joe; Williamson, Rodney

    The solidification microstructure of a laboratory-scale Nickel alloy 718 vacuum arc remelted (VAR) ingot was analyzed. The cylindrical, 210-mm-diameter ingot was sectioned along a plane bisecting it length-wise, and this mid-plane surface was ground and etched using Canada's reagent to reveal segregation contrast. Over 350 photographs were taken of the etched mid-plane surface and stitched together to form a single mosaic image. Image data in the resulting mosaic were processed using a variety of algorithms to extract quantities such as primary dendrite orientation, primary dendrite arm spacing (PDAS), and secondary dendrite arm spacing (SDAS) as a function of location. These quantities were used to calculate pool shape and solidification rate during solidification using existing empirical relationships for Nickel Alloy 718. The details and outcomes of this approach, along with the resulting comparison to experimental processing conditions and computational models, are presented.

  7. Si K EDGE STRUCTURE AND VARIABILITY IN GALACTIC X-RAY BINARIES

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, Norbert S.; Corrales, Lia; Canizares, Claude R. [Kavli Institute for Astrophysics and Space Research, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2016-08-10

    We survey the Si K edge structure in various absorbed Galactic low-mass X-ray binaries (LMXBs) to study states of silicon in the inter- and circum-stellar medium. The bulk of these LMXBs lie toward the Galactic bulge region and all have column densities above 10{sup 22} cm{sup −2}. The observations were performed using the Chandra High Energy Transmission Grating Spectrometer. The Si K edge in all sources appears at an energy value of 1844 ± 0.001 eV. The edge exhibits significant substructure that can be described by a near edge absorption feature at 1849 ± 0.002 eV and a far edge absorption feature at 1865 ± 0.002 eV. Both of these absorption features appear variable with equivalent widths up to several mÅ. We can describe the edge structure using several components: multiple edge functions, near edge absorption excesses from silicates in dust form, signatures from X-ray scattering optical depths, and a variable warm absorber from ionized atomic silicon. The measured optical depths of the edges indicate much higher values than expected from atomic silicon cross sections and interstellar medium abundances, and they appear consistent with predictions from silicate X-ray absorption and scattering. A comparison with models also indicates a preference for larger dust grain sizes. In many cases, we identify Si xiii resonance absorption and determine ionization parameters between log ξ = 1.8 and 2.8 and turbulent velocities between 300 and 1000 km s{sup −1}. This places the warm absorber in close vicinity of the X-ray binaries. In some data, we observe a weak edge at 1.840 keV, potentially from a lesser contribution of neutral atomic silicon.

  8. Peculiarities of the coolant of large ingots in crystallizators of semicontinuous casting machines

    International Nuclear Information System (INIS)

    Tsukerman, V.Ya.; Marchenko, I.K.; Rimen, V.Kh.

    1983-01-01

    Peculiarities of heat transfer in crystallizator of semicontinuous blank casting machine were investigated, taking carbon and chromium-nickel steels as an example. The effect of crystallizator cross-section and decrease of the rate of metal casting on ingot cooling was considered at that. It was established that nonuniformity of deformation of ingot skin as well as the state of crystallizator operating walls affect on heat transfer in crystallizator. Crystallizator structure with ribs in upper part and without ribs in lower cone part is optimal. It provides more uniform skin growth in initial period of solidification and compensation of gap, which appears due to shrinkage

  9. Silicon materials outlook study for 1980-85 calendar years

    Energy Technology Data Exchange (ETDEWEB)

    Costogue, E.; Ferber, R.; Hasbach, W.; Pellin, R.; Yaws, C.

    1979-11-01

    Photovoltaic solar cell arrays converting solar energy into electrical energy can become a cost-effective, alternative energy source provided that an adequate supply of low-priced solar cell materials and automated fabrication techniques are available. Presently, the photovoltaic industry is dependent upon polycrystalline silicon which is produced primarily for the discrete semiconductor device industry. This dependency is expected to continue until DOE-sponsored new technology developments mature. Recent industry forecasts have predicted a limited supply of polycrystalline silicon material and a shortage could occur in the early 80's. The Jet Propulsion Laboratory's Technology Development and Application Lead Center formed an ad hoc committee at JPL, SERI and consultant personnel to conduct interviews with key polycrystalline manufacturers and a large cross-section of single crystal ingot growers and wafer manufacturers. Industry consensus and conclusions reached from the analysis of the data obtained by the committee are reported. The highlight of the study is that there is a high probability of polycrystalline silicon shortage by the end of CY 1982 and a strong seller's market after CY 1981 which will foster price competition for available silicon.

  10. Effects of silicon cross section and neutron spectrum on the radial uniformity in neutron transmutation doping

    International Nuclear Information System (INIS)

    Kim, Haksung; Ho Pyeon, Cheol; Lim, Jae-Yong; Misawa, Tsuyoshi

    2012-01-01

    The effects of silicon cross section and neutron spectrum on the radial uniformity of a Si-ingot are examined experimentally with various neutron spectrum conditions. For the cross section effect, the numerical results using silicon single crystal cross section reveal good agreements with experiments within relative difference of 6%, whereas the discrepancy is approximately 20% in free-gas cross section. For the neutron spectrum effect, the radial uniformity in hard neutron spectrum is found to be more flattening than that in soft spectrum. - Highlights: ► The effects of silicon cross section and neutron spectrum on the radial uniformity in NTD were experimentally investigated. ► The numerical results using silicon single crystal cross section reveal good agreements. ► The radial uniformity in hard neutron spectrum was more flat than that in soft spectrum. ► The silicon single crystal cross section and hard neutron spectrum are recommended for numerical analyses and radial uniformity flattening in NTD, respectively.

  11. Surface Detail Reproduction and Effect of Disinfectant and Long-Term Storage on the Dimensional Stability of a Novel Vinyl Polyether Silicone Impression Material.

    Science.gov (United States)

    Nassar, Usama; Chow, Ava K

    2015-08-01

    This study investigated the surface detail reproduction and dimensional stability of a vinyl polyether silicone (VPES) in comparison to a vinylpolysiloxane (VPS) material as a function of prolonged storage for up to 2 weeks. Heavy-body VPES (EXA'lence(TM) Fast Set) and VPS (Imprint(TM) 3 Quick Step) were compared. Forty impression ingots of each material were made using a stainless steel die as described by ANSI/ADA specification No. 19. Twenty impressions of each material were disinfected by immersion in a 2.5% buffered glutaraldehyde solution. Surface quality was assessed and scored immediately after making the ingots. Dimensional stability measurements were made immediately and repeated on the same ingots after 7 and 14 days storage in ambient laboratory conditions. Data were analyzed using the D'Agostino and Pearson omnibus normality test followed by two-way repeated measures ANOVA with post hoc Bonferroni tests. Values of p < 0.01 were deemed to be significant. Disinfected VPES and VPS specimens had significantly reduced dimensional changes at 7 and 14 days when compared with the nondisinfected ones (p < 0.0001). The dimensional stability of both materials was within ANSI/ADA specification No. 19's acceptable limit throughout the 2-week test period, regardless of whether they were disinfected. Out of the initial 80 ingots, 8 VPES and 1 VPS ingot scored a 2 on the surface detail test, while the remaining 71 ingots scored 1. Heavy-body fast-set VPES experienced minimal contraction in vitro after prolonged storage, though surface detail scores were not as consistent as those of the VPS tested. The least contraction occurred when the material was examined immediately after ingot production. © 2014 by the American College of Prosthodontists.

  12. Electron-beam induced amorphization of stishovite: Silicon-coordination change observed using Si K-edge extended electron energy-loss fine structure

    International Nuclear Information System (INIS)

    Aken, P.A. van; Sharp, T.G.; Seifert, F.

    1998-01-01

    The analysis of the extended energy-loss fine structure (EXELFS) of the Si K-edge for sixfold-coordinated Si in synthetic stishovite and fourfold-coordinated Si in natural α-quartz is reported by using electron energy-loss spectroscopy (EELS) in combination with transmission electron microscopy (TEM). The stishovite Si K-edge EXELFS spectra were measured as a time-dependent series to document irradiation-induced amorphization. The amorphization was also investigated through the change in Si K- and O K-edge energy-loss near edge structure (ELNES). For α-quartz, in contrast to stishovite, electron irradiation-induced vitrification, produced no detectable changes of the EXELFS. The Si K-edge EXELFS were analysed with the classical extended X-ray absorption fine structure (EXAFS) treatment and compared to ab initio curve-waved multiple-scattering (MS) calculations of EXAFS spectra for stishovite and α-quartz. Highly accurate information on the local atomic environment of the silicon atoms during the irradiation-induced amorphization of stishovite is obtained from the EXELFS structure parameters The mean Si-O bond distance R and mean Si coordination number N changes from R=0.1775 nm and N=6 for stishovite through a disordered intermediate state (R∼0.172 nm and N∼5) to R∼0.167 nm and N∼4.5 for a nearly amorphous state similar to α-quartz (R=0.1609 nm and N=4). During the amorphization process, the Debye-Waller factor (DWF) passes through a maximum value of σ N 2 ∼83.8pm 2 as it changes from σ st 2 =51.8pm 2 for sixfold to σ qu 2 =18.4pm 2 for fourfold coordination of Si. This increase in Debye-Waller factor indicates an increase in mean-square relative displacement (MSRD) between the central silicon atom and its oxygen neighbours. Using the EXELFS data for amorphization, a new method is developed to derive the relative amounts of Si coordinations in high-pressure minerals with mixed coordination. For the radiation-induced amorphization process of

  13. Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  14. Hopping absorption edge in silicon inversion layers

    International Nuclear Information System (INIS)

    Kostadinov, I.Z.

    1983-09-01

    The low frequency gap observed in the absorption spectrum of silicon inversion layers is related to the AC variable range hopping. The frequency dependence of the absorption coefficient is calculated. (author)

  15. Controlling liquid pool depth in VAR of a 21.6 cm diameter ingot of Alloy 718

    Science.gov (United States)

    Lopez, Felipe; Beaman, Joseph; Williamson, Rodney; Taleff, Eric; Watt, Trevor

    It is believed that the final microstructure in vacuum arc remelted (VAR) ingots is strongly influenced by the molten metal pool profile. Thus, if the pool profile was properly controlled during the melt then defect-free microstructures would be obtained. The recent development of a reduced-order model of VAR solidification allowed the design of a pool depth controller to accomplish this task. The controller used a linear quadratic regulator and a Kalman filter to stabilize the melt pool solidification front under the effect of uncertain process dynamics and noisy measurements. Basic Axisymmetric Remelting (BAR), a high-fidelity VAR ingot model, was used in real time to provide pool depth measurements that were incorporated in the control loop. The controller was tested at Los Alamos National Laboratory in a 21.6 diameter Alloy 718 ingot. Details of the controller design will be presented, along with comparisons to experimentally-measured pool depths.

  16. Evolution of ESR Technology and Equipment for Long Hollow Ingots Manufacture

    Science.gov (United States)

    Medovar, Lev; Stovpchenko, Ganna; Dudka, Grigory; Kozminskiy, Alexander; Fedorovskii, Borys; Lebid, Vitalii; Gusiev, Iaroslav

    In this paper development of both ESR technology and equipment for hollow ingot manufacture review and analysis are presented. The real complications of hollow ingot manufacture and some tendentious issues which restrict process dissemination are discussed. An actual data of modern manufacture of as-cast pipes for heat and power engineering by traditional ESR with consumable electrode are given. Results of microstructure and nonmetal inclusion investigations have shown the high quality of as-cast ESR pipes. On the basis of these results the possibility to produce huge ESR hollows (up 5000 mm in dia) with final goal drastically to reduce setting ratio on forged shells and rings or even replace it by ESR hollows as-cast is grounded. Two new ESR technologies — consumable electrodes change and liquid metal usage — have passed pilot tests for heavy hollow production and shown very prospective results to be presented.

  17. Chemical Separation of Fission Products in Uranium Metal Ingots from Electrolytic Reduction Process

    International Nuclear Information System (INIS)

    Lee, Chang-Heon; Kim, Min-Jae; Choi, Kwang-Soon; Jee, Kwang-Yong; Kim, Won-Ho

    2006-01-01

    Chemical characterization of various process materials is required for the optimization of the electrolytic reduction process in which uranium dioxide, a matrix of spent PWR fuels, is electrolytically reduced to uranium metal in a medium of LiCl-Li 2 O molten at 650 .deg. C. In the uranium metal ingots of interest in this study, residual process materials and corrosion products as well as fission products are involved to some extent, which further adds difficulties to the determination of trace fission products. Besides it, direct inductively coupled plasma atomic emission spectrometric (ICP-AES) analysis of uranium bearing materials such as the uranium metal ingots is not possible because a severe spectral interference is found in the intensely complex atomic emission spectra of uranium. Thus an adequate separation procedure for the fission products should be employed prior to their determinations. In present study ion exchange and extraction chromatographic methods were adopted for selective separation of the fission products from residual process materials, corrosion products and uranium matrix. The sorption behaviour of anion and tri-nbutylphosphate (TBP) extraction chromatographic resins for the metals in acidic solutions simulated for the uranium metal ingot solutions was investigated. Then the validity of the separation procedure for its reliability and applicability was evaluated by measuring recoveries of the metals added

  18. Ingot formation using uranium dendrites recovered by electrolysis in LiCl-KCl-PuCl{sub 3}-UCl{sub 3} melt

    Energy Technology Data Exchange (ETDEWEB)

    Mineo Fukushima; Akira Nakayoshi; Shinichi Kitawaki [Japan Atomic Energy Agency (JAEA), 4-33 Muramatsu Tokai-mura Naka-gun, Ibaraki, 319-1194 (Japan); Masaki Kurata; Noboru Yahagi [Central Research Institute of Electric Power Industry (CRIEPI), 2-11-1 Iwadokita Komae-shi, Tokyo, 201-8511 (Japan)

    2008-07-01

    Products on solid cathodes recovered by the metal pyrochemical processing were processed to obtain uranium ingot. Studies on process conditions of uranium formation, assay recovered uranium products and by-products and evaluation of mass balance were carried out. In these tests, it is confirmed that uranium ingots can be obtained with heating the products more than melting temperature of metal uranium under atmospheric pressure because adhered salt cover the uranium not to oxidize it during uranium cohering. Covered salt can be removed after ingot formation. Inside the ingot, there were a lump of uranium and dark brown colored dross was observed. Material balance of uranium is 77 {approx} 96%, that of plutonium is 71 {approx} 109%, and that of americium that is a volatile substance more than uranium and plutonium become 79 {approx} 119%. Volatilization of americium is very small under the condition of high temperature. (authors)

  19. The Mathematical Model of Hydrodynamics and Heat and Mass Transfer at Formation of Steel Ingots and Castings

    Directory of Open Access Journals (Sweden)

    Bondarenko V.I.

    2015-03-01

    Full Text Available The generic mathematical model and computational algorithm considering hydrodynamics, heat and mass transfer processes during casting and forming steel ingots and castings are offered. Usage domains for turbulent, convective and non-convective models are determined depending on ingot geometry and thermal overheating of the poured melt. The expert system is developed, enabling to choose a mathematical model depending on the physical statement of a problem.

  20. X-ray excited optical luminescence (XEOL) and its application to porous silicon

    International Nuclear Information System (INIS)

    Hill, D.A.

    1998-09-01

    X-ray Excited Optical Luminescence (XEOL) is investigated as a local structural probe of the light-emitting sites in porous silicon. A detailed microscopic model of the XEOL process in porous silicon is proposed. A central aspect of the technique is an assessment of the spatial separation between the primary photoionisation event and subsequent optical radiative recombination. By constructing a Monte Carlo simulation of hot electron propagation in silicon using both elastic and inelastic scattering cross-sections, the mean minimum range of luminescence excitation can be calculated. This range is estimated as 546±1A for the silicon K-edge (∼ 1839eV), but is reduced to 8.9±0.1A for the silicon L 2,3 -edge (∼ 99eV). From known porous silicon properties, it is concluded that this mean minimum range is comparable to the actual range of excitation. Hence, more localised structural information may be obtained from L 2,3 -edge XEOL measurements. This important difference between the two spectra has been neglected in previous studies. Simultaneous measurements of the XEOL and total electron yield (TEY) x-ray absorption spectra (XAS) have been conducted at both the silicon K-edge and L 2,3 -edge for various porous silicon samples and related materials. Measurements have been conducted at the Si K-edge on a rapid thermally oxidised (RTO) porous silicon sample. XEOL spectra yield two distinct luminescence bands in the visible region. From multi-bunch wavelength-selective XEOL measurements, it is concluded that there are blue luminescent defective silica sites together with a red luminescent site originating from silicon-like material. The spectral time decay curve under pulsed x-ray excitation gives two distinct decay components; one fast in the range of a few nanoseconds and the other slow in the range of microseconds. Time-resolved XEOL measurements in single-bunch mode show that the fast band mirrors the blue wavelength XEOL whereas the slow band correlates with the

  1. Authorized limits for Fernald copper ingots

    Energy Technology Data Exchange (ETDEWEB)

    Frink, N.; Kamboj, S.; Hensley, J.; Chen, S. Y.

    1997-09-01

    This development document contains data and analysis to support the approval of authorized limits for the unrestricted release of 59 t of copper ingots containing residual radioactive material from the U.S. Department of Energy (DOE) Fernald Environmental Management Project (FEMP). The analysis presented in this document comply with the requirements of DOE Order 5400.5, {open_quotes}Radiation Protection of the Public and the Environment,{close_quotes} as well as the requirements of the proposed promulgation of this order as 10 CFR Part 834. The document was developed following the step-by-step process described in the Draft Handbook for Controlling Release for Reuse or Recycle Property Containing Residual Radioactive Material.

  2. Authorized limits for Fernald copper ingots

    International Nuclear Information System (INIS)

    Frink, N.; Kamboj, S.; Hensley, J.; Chen, S.Y.

    1997-09-01

    This development document contains data and analysis to support the approval of authorized limits for the unrestricted release of 59 t of copper ingots containing residual radioactive material from the U.S. Department of Energy (DOE) Fernald Environmental Management Project (FEMP). The analysis presented in this document comply with the requirements of DOE Order 5400.5, open-quotes Radiation Protection of the Public and the Environment,close quotes as well as the requirements of the proposed promulgation of this order as 10 CFR Part 834. The document was developed following the step-by-step process described in the Draft Handbook for Controlling Release for Reuse or Recycle Property Containing Residual Radioactive Material

  3. Multiple batch recharging for industrial CZ silicon growth

    Science.gov (United States)

    Fickett, B.; Mihalik, G.

    2001-05-01

    The Czochralski (CZ) crystal growth process used in the Siemens Solar Industries’ (SSI) Vancouver, WA facility was non-continuous. Each furnace run's production was limited by the size of the starting charge. Once the charge was depleted, the furnace was shut down, cooled, and set back up for the next run. A recharge system was developed which transforms standard CZ growth into a semi-continuous process. Now when the charge is depleted, the crucible can be refilled in situ as the grown ingot is being removed from the furnace. SSI has demonstrated up to 14 recharge cycles in a single run. The resulting benefits included: significant cost reduction, increased yield, increased throughput, reduced energy consumption, improved process capability, reduced material handling requirements, and reduced labor. The recharge system also enables the use of granular silicon, which requires less than 30% of the energy required when manufacturing silicon-starting materials. This significantly reduces the energy “pay-back” time associated with SSI's finished product, photovoltaic panels.

  4. Control of the Gas Flow in an Industrial Directional Solidification Furnace for Production of High Purity Multicrystalline Silicon Ingots

    Directory of Open Access Journals (Sweden)

    Lijun Liu

    2015-01-01

    Full Text Available A crucible cover was designed as gas guidance to control the gas flow in an industrial directional solidification furnace for producing high purity multicrystalline silicon. Three cover designs were compared to investigate their effect on impurity transport in the furnace and contamination of the silicon melt. Global simulations of coupled oxygen (O and carbon (C transport were carried out to predict the SiO and CO gases in the furnace as well as the O and C distributions in the silicon melt. Cases with and without chemical reaction on the cover surfaces were investigated. It was found that the cover design has little effect on the O concentration in the silicon melt; however, it significantly influences CO gas transport in the furnace chamber and C contamination in the melt. For covers made of metal or with a coating on their surfaces, an optimal cover design can produce a silicon melt free of C contamination. Even for a graphite cover without a coating, the carbon concentration in the silicon melt can be reduced by one order of magnitude. The simulation results demonstrate a method to control the contamination of C impurities in an industrial directional solidification furnace by crucible cover design.

  5. The knife-edge chamber

    International Nuclear Information System (INIS)

    Barasch, E.F.; Bowcock, T.J.V.; Drew, M.M.; Elliott, S.M.; Lee, B.; McIntyre, P.M.; Pang, Y.; Popovic, M.; Smith, D.D.

    1990-01-01

    In this paper the design for a new technology for particle track detectors is described. Using standard IC fabrication techniques, a pattern of microscopic knife edges and field-shaping electrodes can be fabricated on a silicon substrate. The knife-edge chamber uniquely offers attractive performance for the track chambers required for SSC detectors, for which no present technology is yet satisfactory. Its features include: excellent radiation hardness (10 Mrad), excellent spatial resolution (∼20 μm), short drift time (20 ns), and large pulse height (1 mV)

  6. Electron-beam induced amorphization of stishovite: Silicon-coordination change observed using Si K-edge extended electron energy-loss fine structure

    Science.gov (United States)

    van Aken, P. A.; Sharp, T. G.; Seifert, F.

    The analysis of the extended energy-loss fine structure (EXELFS) of the Si K-edge for sixfold-coordinated Si in synthetic stishovite and fourfold-coordinated Si in natural α-quartz is reported by using electron energy-loss spectroscopy (EELS) in combination with transmission electron microscopy (TEM). The stishovite Si K-edge EXELFS spectra were measured as a time-dependent series to document irradiation-induced amorphization. The amorphization was also investigated through the change in Si K- and O K-edge energy-loss near edge structure (ELNES). For α-quartz, in contrast to stishovite, electron irradiation-induced vitrification, verified by selected area electron diffraction (SAED), produced no detectable changes of the EXELFS. The Si K-edge EXELFS were analysed with the classical extended X-ray absorption fine structure (EXAFS) treatment and compared to ab initio curve-waved multiple-scattering (MS) calculations of EXAFS spectra for stishovite and α-quartz. Highly accurate information on the local atomic environment of the silicon atoms during the irradiation-induced amorphization of stishovite is obtained from the EXELFS structure parameters (Si-O bond distances, coordination numbers and Debye-Waller factors). The mean Si-O bond distance R and mean Si coordination number N changes from R=0.1775 nm and N=6 for stishovite through a disordered intermediate state (R 0.172 nm and N 5) to R 0.167 nm and N 4.5 for a nearly amorphous state similar to α-quartz (R=0.1609 nm and N=4). During the amorphization process, the Debye-Waller factor (DWF) passes through a maximum value of as it changes from for sixfold to for fourfold coordination of Si. This increase in Debye-Waller factor indicates an increase in mean-square relative displacement (MSRD) between the central silicon atom and its oxygen neighbours that is consistent with the presence of an intermediate structural state with fivefold coordination of Si. The distribution of coordination states can be estimated by

  7. Optimization of heat transfer during the directional solidification process of 1600 kg silicon feedstock

    Science.gov (United States)

    Hu, Chieh; Chen, Jyh Chen; Nguyen, Thi Hoai Thu; Hou, Zhi Zhong; Chen, Chun Hung; Huang, Yen Hao; Yang, Michael

    2018-02-01

    In this study, the power ratio between the top and side heaters and the moving velocity of the side insulation are designed to control the shape of the crystal-melt interface during the growth process of a 1600 kg multi-crystalline silicon ingot. The power ratio and insulation gap are adjusted to ensure solidification of the melt. To ensure that the crystal-melt interface is slightly convex in relation to the melt during the entire solidification process, the power ratio should be augmented gradually in the initial stages while being held to a constant value in the middle stages. Initially the gap between the side and the bottom insulation is kept small to reduce thermal stress inside the seed crystals. However, the growth rate will be slow in the early stages of the solidification process. Therefore, the movement of the side insulation is fast in the initial stages but slower in the middle stages. In the later stages, the side insulation gap is fixed. With these modifications, the convexity of the crystal-melt interface in relation to the melt can be maintained during the growth process with an approximately 41% reduction in the thermal stress inside the growing ingot and an 80% reduction in dislocation density along the center line of the ingot compared with the original case.

  8. Analytical/Experimental Investigation of Corpuscular Radiation Detectors

    Science.gov (United States)

    1985-09-15

    with germa- nium and silicon ingots. In our case, we must apply it to ingots of tin, or aluminum , or lead. The impurities problem is alleviated...fundamental proper- ties of this sensor can be summarized as follows. * A silicon block is well suited for thermometric detection of recoil electrons

  9. Improvement in the reliability of shells for light water reactors by manufacturing from hollow ingots

    International Nuclear Information System (INIS)

    Bocquet, P.; Blondeau, R.; Poitrault, I.; Badeau, J.P.; Dumont, R.

    1989-01-01

    The example of forging shells for PWR type reactors is proposed to show how the choice of the manufacturing process may be of prime importance for the component integrity by the reduction of the detrimental effects of segregations. The forging shells (20MnMoNi55) manufactured from hollow ingot are free of any segregation in the critical area located just at the internal surface and sub-surface. Manufacturing problems associated to these segregations in shells issued from conventional ingots, in particular welding difficulties for cladding, have been reduced or eleminated. The reliability of these components present an improved resistance to irradiation embrittlement. (DG)

  10. Development of the irradiation facilities for silicon neutron doping in France

    International Nuclear Information System (INIS)

    Breant, P.; Cherruau, F.; Genthon, J.P.

    1980-08-01

    Irradiation facilities for silicon irradiations in France may be classified in two categories: on the one hand the devices directly implemented in the light water of α swimming-pool reactor and on the other hand the devices implemented in a neutronic medium -heavy water here- providing a high value of the thermal to fast neutron flux ratio. The tools used in France for silicon neutron doping are recapitulated according to this classification in tables, with their main characteristics; in addition it is specified that all existing facilities are instrumented with ingot rotation, flux monitoring, automatic time integration and are associated with handling, storage, cleaning, decontamination and activity control equipment. Finally, concerning the irradiation capacities given in these tables, it is pointed out that they are realistic and present capacities, for presently running devices and according to the way they are used on an average; that is to say that they take into account the real average dimensions of the ingot supplied and not the maximum possible loading with the maximum diameters. Further extensions of capacity are possible if need be by the installation of supplementary standard irradiation modules in the pools. Particular attention will given to the new developments: -new irradiaton facilities with a high Oth/Or ratio being developed in the new research reactor ORPHEE: - developments in the OSIRIS H 2 O reactor. In particular and in connection with the facilities developped in OSIRIS, neutronic problems typical and swimming-pool reactors will be contemplated and the adopted solutions given

  11. Fabrication of a 1200 kg Ingot of V-4Cr-4Ti for the DIII-D Radiative Divertor Program

    International Nuclear Information System (INIS)

    Johnson, W.R.; Smith, J.P.

    1998-01-01

    Vanadium chromium titanium alloys are attractive materials for fusion reactors because of their high temperature capability and their potential for low neutron active and rapid activation decay. A V-4Cr-4Ti alloy has been selected in the U.S. as the current leading candidate vanadium alloy for future use in fusion reactor structural applications. General Atomics (GA), in conjunction with the Department of Energy's (DOE) DIII-D Program, is carrying out a plan for the utilization of this vanadium alloy in the DIII-D tokamak. The plan will culminate in the fabrication, installation, and operation of a V-4Ti alloy structure in the DIII-D Radiative Divertor (RD) upgrade. The deployment of vanadium alloy will provide a meaningful step in the development and technology acceptance of this advanced material for future fusion power devices. Under a GA contract and material specification, an industrial scale 1200 kg heat (ingot) of a V-4Cr-4Ti alloy has been produced and converted into product forms by Wah Chang of Albany, Oregon (WCA). To assure the proper control of minor and trace impurities which affect the mechanical and activation behavior of this vanadium alloy, selected lots of raw vanadium base metal were processed by aluminothermic reduction of high purity vanadium oxide, and were then electron beam melted into two high purity vanadium ingots. The ingots were then consolidated with high purity Cr and Ti, and double vacuum-arc melted to obtain a 1200 kg V-4Cr-4Ti alloy ingot. Several billets were extruded from the ingot, and were then fabricated into plate, sheet, and rod at WCA. Tubing was subsequently processed from plate material. The chemistry and fabrication procedures for the product forms were specified on the basis of experience and knowledge gained from DOE Fusion Materials Program studies on previous laboratory scale heats and a large scale ingot (500 kg)

  12. Edge morphology evolution of graphene domains during chemical vapor deposition cooling revealed through hydrogen etching.

    Science.gov (United States)

    Zhang, Haoran; Zhang, Yanhui; Zhang, Yaqian; Chen, Zhiying; Sui, Yanping; Ge, Xiaoming; Yu, Guanghui; Jin, Zhi; Liu, Xinyu

    2016-02-21

    During cooling, considerable changes such as wrinkle formation and edge passivation occur in graphene synthesized on the Cu substrate. Wrinkle formation is caused by the difference in the thermal expansion coefficients of graphene and its substrate. This work emphasizes the cooling-induced edge passivation. The graphene-edge passivation can limit the regrowth of graphene at the domain edge. Our work shows that silicon-containing particles tend to accumulate at the graphene edge, and the formation of these particles is related to cooling. Furthermore, a clear curvature can be observed at the graphene edge on the Cu substrate, indicating the sinking of the graphene edge into the Cu substrate. Both the sinking of the graphene edge and the accumulation of silicon-containing particles are responsible for edge passivation. In addition, two kinds of graphene edge morphologies are observed after etching, which were explained by different etching mechanisms that illustrate the changes of the graphene edge during cooling.

  13. Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

    International Nuclear Information System (INIS)

    Palviainen, Tanja; Tuuva, Tuure; Leinonen, Kari

    2007-01-01

    Detectors with n-type silicon with an n + -type guard ring were investigated. In the present work, a new p + /n/n + detector structure with an n + guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software

  14. Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

    Energy Technology Data Exchange (ETDEWEB)

    Palviainen, Tanja [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland)]. E-mail: tanja.palviainen@lut.fi; Tuuva, Tuure [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland); Leinonen, Kari [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland)

    2007-04-01

    Detectors with n-type silicon with an n{sup +}-type guard ring were investigated. In the present work, a new p{sup +}/n/n{sup +} detector structure with an n{sup +} guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software.

  15. An investigation of excess noise in transition-edge sensors on a solid silicon substrate

    International Nuclear Information System (INIS)

    Crowder, S.G.; Lindeman, M.A.; Anderson, M.B.; Bandler, S.R.; Bilgri, N.; Bruijn, M.P.; Chervenak, J.; Figueroa-Feliciano, E.; Finkbeiner, F.; Germeau, A.; Hoevers, H.F.C.; Iyomoto, N.; Kelly, R.; Kilbourne, C.A.; Lai, T.; Man, J.; McCammon, D.; Nelms, K.L.; Porter, F.S.; Rocks, L.; Saab, T.; Sadleir, J.; Vidugiris, G.

    2006-01-01

    Transition-edge sensors (TESs) exhibit two major types of excess noise above the expected and unavoidable thermodynamic fluctuation noise (TFN) to the heat sink and Johnson noise. High-resistance TESs such as those made by the Netherlands Institute for Space Research (SRON) show excess noise consistent with internal TFN (ITFN) caused by random energy transport within the TES itself while low resistance TESs show an excess voltage noise of unknown origin seemingly unrelated to temperature fluctuations. Running a high-resistance TES on a high thermal conductivity substrate should suppress ITFN and allow detection of any excess voltage noise. We tested two TESs on a solid silicon substrate fabricated by SRON of a relatively high normal state resistance of ∼200 mΩ. After determining a linear model of the TES response to noise for the devices, we found little excess TFN and little excess voltage noise for bias currents of up to ∼20 μA

  16. Numerical simulation on multiple pouring process for a 292 t steel ingot

    Directory of Open Access Journals (Sweden)

    Tu Wutao

    2014-01-01

    Full Text Available A ladle-tundish-mould transportation model considering the entire multiple pouring (MP process is proposed. Numerical simulation is carried out to study the carbon distribution and variation in both the tundish and the mould for making a 292 t steel ingot. Firstly, the fluid flow as well as the heat and mass transfer of the molten steel in the tundish is simulated based on the multiphase transient turbulence model. Then, the carbon mixing in the mould is calculated by using the species concentration at the tundish outlet as the inlet condition during the teeming process. The results show a high concentration of carbon at the bottom and a low concentration of carbon at the top of the mould after a MP process with carbon content high in the first ladle and low in the last ladle. Such carbon concentration distribution would help reduce the negative segregation at the bottom and the positive segregation at the top of the solidified ingot.

  17. Probing active-edge silicon sensors using a high precision telescope

    Energy Technology Data Exchange (ETDEWEB)

    Akiba, K. [Federal University of Rio de Janeiro, Rio de Janeiro (Brazil); Artuso, M. [Syracuse University, Syracuse, NY (United States); Beveren, V. van; Beuzekom, M. van; Boterenbrood, H. [Nikhef, Amsterdam (Netherlands); Buytaert, J.; Collins, P.; Dumps, R. [CERN, the European Organisation for Nuclear Research, Geneva (Switzerland); Heijden, B. van der [Nikhef, Amsterdam (Netherlands); Hombach, C. [University of Manchester, Manchester, Lancashire (United Kingdom); Hynds, D. [Glasgow University, Glasgow, Lanarkshire (United Kingdom); Hsu, D. [Syracuse University, Syracuse, NY (United States); John, M. [University of Oxford, Oxfordshire (United Kingdom); Koffeman, E. [Nikhef, Amsterdam (Netherlands); Leflat, A. [Lomonosov Moscow State University, Moscow (Russian Federation); Li, Y. [Tsinghua University, Beijing (China); Longstaff, I.; Morton, A. [Glasgow University, Glasgow, Lanarkshire (United Kingdom); Pérez Trigo, E. [Universidade de Santiago de Compostela, Santiago de Compostela (Spain); Plackett, R. [Diamond Light Source Ltd., Didcot, Oxfordshire (United Kingdom); and others

    2015-03-21

    The performance of prototype active-edge VTT sensors bump-bonded to the Timepix ASIC is presented. Non-irradiated sensors of thicknesses 100–200 μm and pixel-to-edge distances of 50 μm and 100 μm were probed with a beam of charged hadrons with sub-pixel precision using the Timepix telescope assembled at the SPS at CERN. The sensors are shown to be highly efficient up to a few micrometers from the physical edge of the sensor. The distortion of the electric field lines at the edge of the sensors is studied by reconstructing the streamlines of the electric field using two-pixel clusters. These results are supported by TCAD simulations. The reconstructed streamlines are used to study the field distortion as a function of the bias voltage and to apply corrections to the cluster positions at the edge.

  18. Production and fabrication of 2500-lb Nb--Ti ingots to rod

    International Nuclear Information System (INIS)

    Cordier, T.E.; McDonald, W.K.

    1975-01-01

    Interest in Nb--Ti superconducting devices is exploding. This paper outlines the critical production criteria for this material. Areas discussed include ingot blending, melting, forging, extrusion, and rod reducing with emphasis on the metallurgical considerations affecting mechanical properties. Data are included relating process parameters to TEM finding as well as R.T. ductility and optical microscopy

  19. Preliminary neutron design of the flux flatter for silicon doping at the RA10

    International Nuclear Information System (INIS)

    Cintas, A.; Bazzana, S.

    2012-01-01

    The neutron transmutation doping of silicon (NTD) is one of the facilities under development for the RA10 project. In order to obtain high quality semiconductor, commercial requirements of NTD include achieving high axial and radial uniformity in the silicon targets. Axial uniformity is achieved locating a neutron screen around the Si ingot, obtaining a flat axial distribution of the dopant concentration. We present the neutron design of this screen, also known as flux flattener. MCNP5 was used to model the screen design. We have reached a satisfactory preliminary screen design after numerous iterations. The fluctuation in the axial distribution of the reaction capture rate ( 30 Si(n,γ) 31 Si) is under ≠1,5%, which is the required level by the semiconductor industry to accept the final product (author)

  20. Optimization of hybrid-type instrumentation for Pu accountancy of U/TRU ingot in pyroprocessing.

    Science.gov (United States)

    Seo, Hee; Won, Byung-Hee; Ahn, Seong-Kyu; Lee, Seung Kyu; Park, Se-Hwan; Park, Geun-Il; Menlove, Spencer H

    2016-02-01

    One of the final products of pyroprocessing for spent nuclear fuel recycling is a U/TRU ingot consisting of rare earth (RE), uranium (U), and transuranic (TRU) elements. The amounts of nuclear materials in a U/TRU ingot must be measured as precisely as possible in order to secure the safeguardability of a pyroprocessing facility, as it contains the most amount of Pu among spent nuclear fuels. In this paper, we propose a new nuclear material accountancy method for measurement of Pu mass in a U/TRU ingot. This is a hybrid system combining two techniques, based on measurement of neutrons from both (1) fast- and (2) thermal-neutron-induced fission events. In technique #1, the change in the average neutron energy is a signature that is determined using the so-called ring ratio method, according to which two detector rings are positioned close to and far from the sample, respectively, to measure the increase of the average neutron energy due to the increased number of fast-neutron-induced fission events and, in turn, the Pu mass in the ingot. We call this technique, fast-neutron energy multiplication (FNEM). In technique #2, which is well known as Passive Neutron Albedo Reactivity (PNAR), a neutron population's changes resulting from thermal-neutron-induced fission events due to the presence or absence of a cadmium (Cd) liner in the sample's cavity wall, and reflected in the Cd ratio, is the signature that is measured. In the present study, it was considered that the use of a hybrid, FNEM×PNAR technique would significantly enhance the signature of a Pu mass. Therefore, the performance of such a system was investigated for different detector parameters in order to determine the optimal geometry. The performance was additionally evaluated by MCNP6 Monte Carlo simulations for different U/TRU compositions reflecting different burnups (BU), initial enrichments (IE), and cooling times (CT) to estimate its performance in real situations. Copyright © 2015 Elsevier Ltd. All

  1. Four-Phase Dendritic Model for the Prediction of Macrosegregation, Shrinkage Cavity, and Porosity in a 55-Ton Ingot

    Science.gov (United States)

    Ge, Honghao; Ren, Fengli; Li, Jun; Han, Xiujun; Xia, Mingxu; Li, Jianguo

    2017-03-01

    A four-phase dendritic model was developed to predict the macrosegregation, shrinkage cavity, and porosity during solidification. In this four-phase dendritic model, some important factors, including dendritic structure for equiaxed crystals, melt convection, crystals sedimentation, nucleation, growth, and shrinkage of solidified phases, were taken into consideration. Furthermore, in this four-phase dendritic model, a modified shrinkage criterion was established to predict shrinkage porosity (microporosity) of a 55-ton industrial Fe-3.3 wt pct C ingot. The predicted macrosegregation pattern and shrinkage cavity shape are in a good agreement with experimental results. The shrinkage cavity has a significant effect on the formation of positive segregation in hot top region, which generally forms during the last stage of ingot casting. The dendritic equiaxed grains also play an important role on the formation of A-segregation. A three-dimensional laminar structure of A-segregation in industrial ingot was, for the first time, predicted by using a 3D case simulation.

  2. NUMERICAL MODELING OF STRESSES NEAR THE SURFACE IN THE INGOT OF CIRCULAR SECTION, CRYSTALLIZABLE AT CIRCULAR TORCH SECONDARY COOLING

    Directory of Open Access Journals (Sweden)

    A. N. Chichko

    2004-01-01

    Full Text Available The results of computer calculations of the stresses, generated in outside layer of ingot of steel 20 of circular section with diameter 300 mm, in application to one of the industrial technological schemas of RUP “BMZ”, are presented. The segments of compressive and tensile stresses formation along the length of ingot are determined and the principal possibility of production of continuously cast slug of circular section at circular-torch spray cooling is shown.

  3. Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

    Science.gov (United States)

    Yoon, Yohan; Yan, Yixin; Ostrom, Nels P.; Kim, Jinwoo; Rozgonyi, George

    2012-11-01

    Continuous-Czochralski (c-Cz) crystal growth has been suggested as a viable technique for the fabrication of photovoltaic Si wafers due to its low resistivity variation of any dopant, independent of segregation, compared to conventional Cz. In order to eliminate light induced degradation due to boron-oxygen traps in conventional p-type silicon wafers, gallium doped wafers have been grown by c-Cz method and investigated using four point probe, deep level transient spectroscopy (DLTS), and microwave-photoconductance decay. Iron-gallium related electrically active defects were identified using DLTS as the main lifetime killers responsible for reduced non-uniform lifetimes in radial and axial positions of the c-Cz silicon ingot. A direct correlation between minority carrier lifetime and the concentration of electrically active Fe-Ga pairs was established.

  4. Development of an In-Line Minority-Carrier Lifetime Monitoring Tool for Process Control during Fabrication of Crystalline Silicon Solar Cells: Annual Subcontract Report, June 2003 (Revised)

    Energy Technology Data Exchange (ETDEWEB)

    Sinton, R. A.

    2004-04-01

    Under the PV Manufacturing R&D subcontract''Development of an In-Line, Minority-Carrier Lifetime Monitoring Tool for Process Control during Fabrication of Crystalline Silicon Solar Cells'', Sinton Consulting developed prototypes for several new instruments for use in the manufacture of silicon solar cells. These instruments are based on two families of R&D instruments that were previously available, an illumination vs. open-circuit-voltage technique and the quasi-steady state RF photoconductance technique for measuring minority-carrier lifetime. Compared to the previous instruments, the new prototypes are about 20 times faster per measurement, and have automated data analysis that does not require user intervention even when confronted by challenging cases. For example, un-passivated multi-crystalline wafers with large variations in lifetime and trapping behavior can be measured sequentially without error. Five instruments have been prototyped in this project to date, including a block tester for evaluating cast or HEM silicon blocks, a CZ ingot tester, an FZ boule tester for use with long-lifetime silicon, and an in-line sample head for measuring wafers. The CZ ingot tester and the FZ boule tester are already being used within industry and there is interest in the other prototypes. For each instrument, substantial R&D work was required in developing the device physics and analysis as well as for the hardware. This work has been documented in a series of application notes and conference publications, and will result in significant improvements for both the R&D and the industrial types of instruments.

  5. X-ray and synchrotron studies of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sivkov, V. N., E-mail: svn@dm.komisc.ru [Russian Academy of Sciences, Komi Scientific Center, Ural Branch (Russian Federation); Lomov, A. A. [Russian Academy of Sciences, Physical-Technological Institute (Russian Federation); Vasil' ev, A. L. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Nekipelov, S. V. [Komi State Pedagogical Institute (Russian Federation); Petrova, O. V. [Russian Academy of Sciences, Komi Scientific Center, Ural Branch (Russian Federation)

    2013-08-15

    The results of comprehensive studies of layers of porous silicon of different conductivity types, grown by anodizing standard Si(111) substrates in an electrolyte based on fluoric acid and ethanol with the addition of 5% of iodine and kept in air for a long time, are discussed. Measurements are performed by scanning electron microscopy, high-resolution X-ray diffraction, and ultrasoft X-ray spectroscopy using synchrotron radiation. The structural parameters of the layers (thickness, strain, and porosity) and atomic and chemical composition of the porous-silicon surface are determined. It is found that an oxide layer 1.5-2.3-nm thick is formed on the surface of the silicon skeleton. The near-edge fine structure of the Si 2p absorption spectrum of this layer corresponds to the fine structure of the 2p spectrum of well coordinated SiO{sub 2}. In this case, the fine structure in the Si 2p-edge absorption region of the silicon skeleton is identical to that of the 2p absorption spectrum of crystalline silicon.

  6. The certification of boron in primary ingot aluminium. BCR No.25

    International Nuclear Information System (INIS)

    Vandecasteele, C.; Colinet, E.

    1984-01-01

    This report sets out the experimental procedures used for the certification of boron in primary ingot aluminium, which has already been certified for carbon and oxygen. Samples were analysed by seven different laboratories using the following methods: spectrophotometry, ICP-emission spectrometry, isotope dilution mass spectrometry, spark source mass spectrometry and charged particle activation analysis. The analytical methods and the statistical approach to analyse the data are described

  7. Continuous Czochralski Growth. Silicon Sheet Growth Development of the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project

    Science.gov (United States)

    Merz, F.

    1979-01-01

    During the reporting period, a successful 100 kilogram run was performed. Six ingots of 13 cm diameter were grown, ranging in size from 15.5 kg to 17.7 kg. Melt replenishment methods included both poly rod and lump feed material. Samples from each ingot were prepared for solar cell fabrication and analyses, impurity analysis, and structural studies. The furnace was converted to the 14-inch hot zone and preliminary heat runs were performed. Two sucessful runs were demonstrated, by growing 25 kg ingots from 30 kg melts. Also, a 100 kg run was attempted, utilizing the 14 inch crucible hot zone, but was prematurely terminated due to excessive monoxide which accumulated on the viewports and a seed failure.

  8. Hydrogen passivation of silicon sheet solar cells

    International Nuclear Information System (INIS)

    Tsuo, Y.S.; Milstein, J.B.

    1984-01-01

    Significant improvements in the efficiencies of dendritic web and edge-supported-pulling silicon sheet solar cells have been obtained after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. The silicon sputter rate for constant ion beam flux of 0.60 +- 0.05 mA/cm 2 exhibits a maximum at approximately 1400-eV ion beam energy

  9. Development and Manufacturing Technology of Prototype Monoblock Low Pressure Rotor Shaft by 650ton Large Ingot

    Energy Technology Data Exchange (ETDEWEB)

    Song, Duk-Yong; Kim, Dong-Soo; Kim, Jungyeup; Lee, Jongwook; Ko, Seokhee [Doosan Heavy Industries and Construction, Changwon(Korea, Republic of)

    2016-10-15

    In order to establish the manufacturing technology for monoblock LP rotor shaft, DHI has produced the prototype monoblock LP rotor shaft with a maximum diameter of φ 2,800 mm using 650 ton ingot and investigated the mechanical properties and the internal quality of the ingot. As a result, the quality and mechanical properties required the large rotor shaft for nuclear power plant met a target. These results indicate that DHI can be contributed to increasing demands with high efficiency and capacity at the nuclear power plant. Additionally, some tests such as high cycle fatigue (HCF), low cycle fatigue (LCF), fracture toughness (K1C/J1C) and dynamic crack propagation velocity (da/dN) are in progress.

  10. Improvement in the reliability of shells for light water reactors by manufacture from hollow ingots

    International Nuclear Information System (INIS)

    Bocquet, P.; Blondeau, R.; Poitrault, I.; Badeau, J.P.; Dumont, R.

    1991-01-01

    The problems associated to the segregation located at the inner surface and subsurface of heavy shell forgings used in nuclear light water reactors are presented. The effect of A segregation on cold or reheat cracking HAZ has conducted fabricators to use severe welding procedures with high preheat temperature and refining HAZ grain size sequences. For shells and rings, the hollow ingot as developed by CLI, with a good control of the location of the center line of segregation, is an excellent answer to these problems. The use of core shell forgings issued from this type of hollow ingots, free of segregation at the inner surface and subsurface area, contributes, by reducing the irradiation embrittlement effect, to increase the safety factor relatively to the risk of failure of the reactor. (orig.)

  11. Inductive ingot heating for extrusion press applications; Induktive Bolzenerwaermung fuer Strangpressanwendungen

    Energy Technology Data Exchange (ETDEWEB)

    Beer, Stefan [I.A.S. Induktions-Anlagen + Service GmbH und Co. KG, Iserlohn (Germany)

    2013-03-15

    Inductive heating of large-format aluminium ingots on modern extrusion press lines generates significant process-engineering benefits. In addition, the proportion of special alloys processed is continuously increasing, accompanied simultaneously by ever smaller production batches, both of which are factors necessitating improvement of and greater flexibility in process-cycle control. This report examines a system concept recently commissioned on one of the world's largest aluminium extrusion presses. (orig.)

  12. Natural and artificial spectral edges in exoplanets

    Science.gov (United States)

    Lingam, Manasvi; Loeb, Abraham

    2017-09-01

    Technological civilizations may rely upon large-scale photovoltaic arrays to harness energy from their host star. Photovoltaic materials, such as silicon, possess distinctive spectral features, including an 'artificial edge' that is characteristically shifted in wavelength shortwards of the 'red edge' of vegetation. Future observations of reflected light from exoplanets would be able to detect both natural and artificial edges photometrically, if a significant fraction of the planet's surface is covered by vegetation or photovoltaic arrays, respectively. The stellar energy thus tapped can be utilized for terraforming activities by transferring heat and light from the day side to the night side on tidally locked exoplanets, thereby producing detectable artefacts.

  13. Neutron transmutation doping technology of silicon and overview of trial irradiations at Cirus reactor

    International Nuclear Information System (INIS)

    Singh, Tej; Bhatnagar, Anil; Singh, Kanchhi; Raina, V.K.

    2007-12-01

    Neutron transmutation doped silicon (NTD-Si) has been used extensively in manufacturing of high power semiconductor devices. The quality of NTD-Si, both from view points of dopant concentration and homogeneity has been found superior to the quality of doped silicon produced by conventional methods. The technology of NTD-Si has been perfected to achieve more accurate resistivity and homogenous resistivity with complete elimination of hot spots. In addition, the greater spatial uniformity, as well as the precise control over the resistivity achievable by using the NTD process, has led to a substantial increase in the breakdown voltage capability of thyristors. The report describes the fundamentals of NTD-Si production and discusses various techniques used for control of dopant concentration and homogeneity. Various aspects like radiation damage, residual radio-activity, nuclear heating, surface contamination and annealing requirements of the silicon ingots after irradiation have also been discussed. Details of trail irradiation and characterization of NTD-Si samples have been provided. Future plans for production of NTD-Si in Cirus and Dhruva reactors have also been discussed. (author)

  14. Probing active-edge silicon sensors using a high precision telescope

    NARCIS (Netherlands)

    Akiba, K.; Artuso, M.; van Beveren, V.; van Beuzekom, M.; Boterenbrood, H.; Buytaert, J.; Collins, P.; Dumps, R.; van der Heijden, B.; Hombach, C.; Hynds, D.; Hsu, D.; John, M.; Koffeman, E.; Leflat, A.; Li, Y.; Longstaff, I.; Morton, A.; PérezTrigo, E.; Plackett, R.; Reid, M.M.; Rodríguez Perez, P.; Schindler, H.; Tsopelas, P.; Vázquez Sierra, C.; Wysokiński, M.

    2015-01-01

    The performance of prototype active-edge VTT sensors bump-bonded to the Timepix ASIC is presented. Non-irradiated sensors of thicknesses 100-200 μm and pixel-to-edge distances of 50 μm and 100 μm were probed with a beam of charged hadrons with sub-pixel precision using the Timepix telescope

  15. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

  16. An attempt to specify thermal history in CZ silicon wafers and possibilities for its modification

    International Nuclear Information System (INIS)

    Kissinger, G.; Sattler, A.; Mueller, T.; Ammon, W. von

    2007-01-01

    The term thermal history of silicon wafers represents the whole variety of process parameters of crystal growth. The aim of this contribution is an attempt to specify thermal history by one parameter that is directly correlated to the bulk microdefect density. The parameter that reflects thermal history and correlates it with nucleation of oxide precipitates is the concentration of VO 2 complexes. The VO 2 concentration in silicon wafers is too low to be measured by FTIR but it can be obtained from the loss of interstitial oxygen during a standardized thermal treatment. Based on this, the vacancy concentration frozen during crystal cooling in the ingot can be calculated. RTA treatments above 1150 deg. C create a well defined level of the VO 2 concentration in silicon wafers. This means that a well controlled modification of the thermal history is possible. We also investigated the kinetics of reduction of the as-grown excess VO 2 concentration during RTA treatments at 950 deg. C and 1050 deg. C and the effectiveness of this attempt to totally delete the thermal history

  17. Evolution of A-Type Macrosegregation in Large Size Steel Ingot After Multistep Forging and Heat Treatment

    Science.gov (United States)

    Loucif, Abdelhalim; Ben Fredj, Emna; Harris, Nathan; Shahriari, Davood; Jahazi, Mohammad; Lapierre-Boire, Louis-Philippe

    2018-06-01

    A-type macrosegregation refers to the channel chemical heterogeneities that can be formed during solidification in large size steel ingots. In this research, a combination of experiment and simulation was used to study the influence of open die forging parameters on the evolution of A-type macrosegregation patterns during a multistep forging of a 40 metric ton (MT) cast, high-strength steel ingot. Macrosegregation patterns were determined experimentally by macroetch along the longitudinal axis of the forged and heat-treated ingot. Mass spectroscopy, on more than 900 samples, was used to determine the chemical composition map of the entire longitudinal sectioned surface. FORGE NxT 1.1 finite element modeling code was used to predict the effect of forging sequences on the morphology evolution of A-type macrosegregation patterns. For this purpose, grain flow variables were defined and implemented in a large scale finite element modeling code to describe oriented grains and A-type segregation patterns. Examination of the A-type macrosegregation showed four to five parallel continuous channels located nearly symmetrical to the axis of the forged ingot. In some regions, the A-type patterns became curved or obtained a wavy form in contrast to their straight shape in the as-cast state. Mass spectrometry analysis of the main alloying elements (C, Mn, Ni, Cr, Mo, Cu, P, and S) revealed that carbon, manganese, and chromium were the most segregated alloying elements in A-type macrosegregation patterns. The observed differences were analyzed using thermodynamic calculations, which indicated that changes in the chemical composition of the liquid metal can affect the primary solidification mode and the segregation intensity of the alloying elements. Finite element modeling simulation results showed very good agreement with the experimental observations, thereby allowing for the quantification of the influence of temperature and deformation on the evolution of the shape of the

  18. Quasimetallic silicon micromachined photonic crystals

    International Nuclear Information System (INIS)

    Temelkuran, B.; Bayindir, Mehmet; Ozbay, E.; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.

    2001-01-01

    We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations

  19. Acoustic analog of monolayer graphene and edge states

    International Nuclear Information System (INIS)

    Zhong, Wei; Zhang, Xiangdong

    2011-01-01

    Acoustic analog of monolayer graphene has been designed by using silicone rubber spheres of honeycomb lattices embedded in water. The dispersion of the structure has been studied theoretically using the rigorous multiple-scattering method. The energy spectra with the Dirac point have been verified and zigzag edge states have been found in ribbons of the structure, which are analogous to the electronic ones in graphene nanoribbons. The guided modes along the zigzag edge excited by a point source have been numerically demonstrated. The open cavity and 'Z' type edge waveguide with 60 o corners have also been realized by using such edge states. -- Highlights: → Acoustic analog of monolayer graphene has been designed. → The energy spectra with the Dirac point have been verified. → The zigzag edge states have been found in ribbons of the structure. → The guided modes excited by a point source have been demonstrated. → The open cavity and 'Z' type edge waveguide have been realized.

  20. Proposed sale of radioactively contaminated nickel ingots located at the Paducah Gaseous Diffusion Plant, Paducah, Kentucky

    International Nuclear Information System (INIS)

    1995-10-01

    The U.S. Department of Energy (DOE) proposes to sell 8,500 radioactively contaminated nickel ingots (9.350 short tons), currently in open storage at the Paducah Gaseous Diffusion Plant (PGDP), to Scientific Ecology Group, Inc. (SEG) for decontamination and resale on the international market. SEG would take ownership of the ingots when they are loaded for transport by truck to its facility in Oak Ridge, Tennessee. SEG would receive approximately 200 short tons per month over approximately 48 months (an average of 180 ingots per month). The nickel decontamination process specified in SEG's technical proposal is considered the best available technology and has been demonstrated in prototype at SEG. The resultant metal for resale would have contamination levels between 0.3 and 20 becquerel per gram (Bq/g). The health hazards associated with release of the decontaminated nickel are minimal. The activity concentration of the end product would be further reduced when the nickel is combined with other metals to make stainless steel. Low-level radioactive waste from the SEG decontamination process, estimated to be approximately 382 m 3 (12,730 ft), would be shipped to a licensed commercial or DOE disposal facility. If the waste were packaged in 0.23 m 3 -(7.5 ft 3 -) capacity drums, approximately 1,500 to 1,900 drums would be transported over the 48-month contract period. Impacts from the construction of decontamination facilities and the selected site are minimal

  1. Obtention of uranium-molybdenum alloy ingots microstructure and phase characterization

    Energy Technology Data Exchange (ETDEWEB)

    Pedrosa, Tercio A.; Braga, Daniel M.; Paula, Joao Bosco de; Brina, Jose Giovanni M.; Ferraz, Wilmar B., E-mail: tap@cdtn.b, E-mail: bragadm@cdtn.b, E-mail: jbp@cdtn.b, E-mail: jgmb@cdtn.b, E-mail: ferrazw@cdtn.b [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

    2011-07-01

    The replacement of high enriched uranium (U-{sup 235} > 85 wt%) by low enriched uranium (U-{sup 235} < 20 wt%) nuclear fuels in research and test reactors is being implemented as an initiative of the Reduced Enrichment for Research and Test Reactors (RERTR) program, conceived in the USA since mid-70s, in order to avoid nuclear weapons proliferation. Such replacement implies in the use of compounds or alloys with higher uranium densities. Several uranium alloys that fill this requirement has been investigated since then. Among these alloys, U-Mo presents great application potential due to its physical properties and good behavior during irradiation, which makes it an important option as a nuclear fuel material for the Brazilian Multipurpose Reactor - RMB. The development of the plate-type nuclear fuel based on U-Mo alloys is being performed at the Nuclear Technology Development Centre (CDTN) and also at the Institute of Energetic and Nuclear Research - IPEN. U-{sup 10}Mo ingots were melted in an induction furnace with protective argon atmosphere. The microstructure of the ingots were characterized through optical and scanning electronic microscopy in the as cast and heat treated conditions. Energy Dispersive Spectrometry and X-Ray Diffraction were used as characterization techniques for elemental analysis and phases determination. It was confirmed the presence of metastable gamma-phase in the as cast condition, surrounded by hypereutectoid alpha-phase (uranium-rich phase), as well as a pearlite-like constituent, composed by alternated lamellas of U{sub 2}Mo compound and alpha-phase, in the heat treated condition. (author)

  2. Preparation of uranium ingots from double fluorides

    International Nuclear Information System (INIS)

    Le Boulbin, E.

    1967-05-01

    A simple method has been developed for the preparation of uranium double fluorides and has given a new impetus to the study of the reduction of these compounds with a view to obtaining very pure uranium ingots. This reduction can be carried out using calcium or magnesium as the reducing agent, this latter metal being very interesting from the practical point of view. A comparative study of the heat balances of the reduction processes for the double fluorides and for uranium tetrafluoride has shown that reduction of the double fluorides is possible. The exact experimental conditions for these reductions have been determined. Our study has shown in particular that the reduction of the double salt UF 4 , CaF 2 by magnesium leads to the production of small (20 to 500 g) samples of high-purity uranium with a yield of 99 per cent. (author) [fr

  3. 3D characterisation of tool wear whilst diamond turning silicon

    OpenAIRE

    Durazo-Cardenas, Isidro Sergio; Shore, Paul; Luo, X.; Jacklin, T.; Impey, S. A.; Cox, A.

    2006-01-01

    Nanometrically smooth infrared silicon optics can be manufactured by the diamond turning process. Due to its relatively low density, silicon is an ideal optical material for weight sensitive infrared (IR) applications. However, rapid diamond tool edge degradation and the effect on the achieved surface have prevented significant exploitation. With the aim of developing a process model to optimise the diamond turning of silicon optics, a series of experimental trials were devi...

  4. On the cooling rate of strip cast ingots for sintered NdFeB magnets

    Energy Technology Data Exchange (ETDEWEB)

    Yu, L.Q. [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Yan, M. [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)]. E-mail: mse_yanmi@dial.zju.edu.cn; Wu, J.M. [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Luo, W. [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Cui, X.G. [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Ying, H.G. [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)

    2007-04-30

    Effects of the cooling rate of strip cast ingots on magnetic properties of sintered NdFeB magnets were studied. It is found that the magnetic properties greatly depend on wheel speed due to different alloy microstructures, which affect readily the particle size distribution of powders obtained after the subsequent jet milling. At higher cooling rate, interlamellar spacing between Nd-rich platelets of the alloy was small, resulting in a lower saturated magnetization due to increased amounts of small particles after jet milling. With further decreasing cooling rate, the resultant larger interlamellar spacing led to too large particle sizes as well as a more irregular shape; thus deteriorated the magnetic properties of the final magnet. A model was developed to disclose the effects of particle sizes on the magnetic alignment process. In the current investigation, optimum magnetic properties of the final magnets were obtained with a cooling rate of 2.6 m/s for preparing the strip. The magnets made by conventionally cast ingot technique exhibited the lowest magnetic properties because of the slowest cooling rate.

  5. Continuous Czochralski growth: Silicon sheet growth development of the large area silicon sheet task of the Low Cost Silicon Solar Array project

    Science.gov (United States)

    1978-01-01

    The primary objective of this contract is to develop equipment and methods for the economic production of single crystal ingot material by the continuous Czochralski (CZ) process. Continuous CZ is defined for the purpose of this work as the growth of at least 100 kilograms of ingot from only one melt container. During the reporting period (October, 1977 - September, 1978), a modified grower was made fully functional and several recharge runs were performed. The largest run lasted 44 hours and over 42 kg of ingot was produced. Little, if any, degradation in efficiency was observed as a result of pulling multiple crystals from one crucible. Solar efficiencies observed were between 9.3 and 10.4% AMO (13.0 and 14.6% AMI) compared to 10.5% (14.7% AMI) for optimum CZ material control samples. Using the SAMICS/IPEG format, economic analysis of continuous CZ suggests that 1986 DoE cost goals can only be met by the growth of large diameter, large mass crystals.

  6. Microstructure and mechanical properties of Al–1Mn and Al–10Si alloy circular clad ingot prepared by direct chill casting

    International Nuclear Information System (INIS)

    Fu, Ying; Jie, Jinchuan; Wu, Li; Park, Joonpyo; Sun, Jianbo; Kim, Jongho; Li, Tingju

    2013-01-01

    An innovative direct chill casting process to prepare Al–10 wt%Si and Al–1 wt%Mn alloy circular clad ingots has been developed in the present study. The experimental casting parameters were determined by theoretical analysis, numerical simulation and experimental processes. The interface of clad ingots was investigated by methods of metallographic examination, electron probe microanalysis (EPMA) and transmission electron microscopy (TEM). The results showed that excellent metallurgical bonding of two different aluminum alloys could be achieved by direct chill casting. The Al–1Mn alloy which was poured into the mold earlier served as the substrate for heterogeneous nucleation of Al–10Si alloy. Because of diffusion of Si and Mn elements, a diffusion layer with a thickness of about 40 μm on average between the Al–10Si and Al–1Mn alloys could be obtained. The tensile strength of the clad ingot was 106.8 MPa and the fractured position was located in the Al–1Mn alloy side, indicating the strength of the interfacial region is higher than that of Al–1Mn alloy.

  7. Disposal of metal fragments released during polycrystalline slicing by multi-wire saw

    Science.gov (United States)

    Boutouchent-Guerfi, N.; Drouiche, N.; Medjahed, S.; Ould-Hamou, M.; Sahraoui, F.

    2016-08-01

    The environmental and economic impacts linked with solar systems are largely based on discharges of slurry generated during the various stages of sawing and cutting ingots. These discharges into the environment are subject to the general regulations on hazardous and special industrial waste disposal. Therefore, they should not be abandoned or burned in open air. The cutting of Silicon ingots leads to the production of Silicon wafers additional costs, losing more than 30% of Silicon material. Abrasive grains (Silicon Carbide) trapped between the wire and the block of Silicon need to be removed by various mechanisms to be later evacuated by slurry fragments. In the interest of decreasing operational costs during polycrystalline ingot slicing at Semiconductors Research Center, and, avoid environmental problems; it is necessary to recover the solar grade Silicon from the Silicon sawing waste. For this reason, the removal of metal fragments has become a preliminary requirement to regenerate the slurry; in addition, the solid phase needs to be separated from the liquid phase after the dissolution PEG with the solvent. In the present study, magnetic separation and centrifugation methods were adopted for metals removal, followed by the analysis of some operating parameters such as: washing time, pH, and initial concentration of Silicon. Finally, analytical, morphological and basic methods were performed in order to evaluate the efficiency of the process undertaken.

  8. Randomized controlled trial assessing the efficacy of a reusable fish-shaped iron ingot to increase hemoglobin concentration in anemic, rural Cambodian women.

    Science.gov (United States)

    Rappaport, Aviva I; Whitfield, Kyly C; Chapman, Gwen E; Yada, Rickey Y; Kheang, Khin Meng; Louise, Jennie; Summerlee, Alastair J; Armstrong, Gavin R; Green, Timothy J

    2017-08-01

    Background: Anemia affects 45% of women of childbearing age in Cambodia. Iron supplementation is recommended in populations in which anemia prevalence is high. However, there are issues of cost, distribution, and adherence. A potential alternative is a reusable fish-shaped iron ingot, which, when added to the cooking pot, leaches iron into the fluid in which it is prepared. Objective: We sought to determine whether there was a difference in hemoglobin concentrations in rural Cambodian anemic women (aged 18-49 y) who cooked with the iron ingot or consumed a daily iron supplement compared with a control after 1 y. Design: In Preah Vihear, 340 women with mild or moderate anemia were randomly assigned to 1 ) an iron-ingot group, 2 ) an iron-supplement (18 mg/d) group, or 3 ) a nonplacebo control group. A venous blood sample was taken at baseline and at 6 and 12 mo. Blood was analyzed for hemoglobin, serum ferritin, and serum transferrin receptor. Hemoglobin electrophoresis was used to detect structural hemoglobin variants. Results: Anemia prevalence was 44% with the use of a portable hemoglobinometer during screening. At baseline, prevalence of iron deficiency was 9% on the basis of a low serum ferritin concentration. There was no significant difference in mean hemoglobin concentrations between the iron-ingot group (115 g/L; 95% CI: 113, 118 g/L; P = 0.850) or iron-supplement group (115 g/L; 95% CI: 113, 117 g/L; P = 0.998) compared with the control group (115 g/L; 95% CI: 113, 117 g/L) at 12 mo. Serum ferritin was significantly higher in the iron-supplement group (73 μg/L; 95% CI: 64, 82 μg/L; P = 0.002) than in the control group at 6 mo; however, this significance was not maintained at 12 mo (73 μg/L; 95% CI: 58, 91 μg/L; P = 0.176). Conclusions: Neither the iron ingot nor iron supplements increased hemoglobin concentrations in this population at 6 or 12 mo. We do not recommend the use of the fish-shaped iron ingot in Cambodia or in countries where the prevalence

  9. Review of ingot niobium as a material for superconducting radiofrequency accelerating cavities

    Energy Technology Data Exchange (ETDEWEB)

    Kneisel, P., E-mail: kneisel@jlab.org [Jefferson Lab, Newport News, VA 23606 (United States); Ciovati, G.; Dhakal, P. [Jefferson Lab, Newport News, VA 23606 (United States); Saito, K. [Michigan State University, East Lansing, MI 48824 (United States); Singer, W.; Singer, X. [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Myneni, G.R., E-mail: rao@jlab.org [Jefferson Lab, Newport News, VA 23606 (United States)

    2015-02-21

    As a result of collaboration between Jefferson Lab and niobium manufacturer Companhia Brasileira de Metalurgia e Mineração (CBMM), ingot niobium was explored as a possible material for superconducting radiofrequency (SRF) cavity fabrication. The first single cell cavity from large-grain high purity niobium was fabricated and successfully tested at Jefferson Lab in 2004. This work triggered research activities in other SRF laboratories around the world. Large-grain (LG) niobium became not only an interesting alternative material for cavity builders, but also material scientists and surface scientists were eager to participate in the development of this technology. Many single cell cavities made from material of different suppliers have been tested successfully and several multi-cell cavities have shown performances comparable to the best cavities made from standard fine-grain niobium. Several 9-cell cavities fabricated by Research Instruments and tested at DESY exceeded the best performing fine grain cavities with a record accelerating gradient of E{sub acc}=45.6 MV/m. The quality factor of those cavities was also higher than that of fine-grain (FG) cavities processed with the same methods. Such performance levels push the state-of-the art of SRF technology and are of great interest for future accelerators. This contribution reviews the development of ingot niobium technology and highlights some of the differences compared to standard FG material and opportunities for further developments.

  10. Progress in thin-film silicon solar cells based on photonic-crystal structures

    Science.gov (United States)

    Ishizaki, Kenji; De Zoysa, Menaka; Tanaka, Yoshinori; Jeon, Seung-Woo; Noda, Susumu

    2018-06-01

    We review the recent progress in thin-film silicon solar cells with photonic crystals, where absorption enhancement is achieved by using large-area resonant effects in photonic crystals. First, a definitive guideline for enhancing light absorption in a wide wavelength range (600–1100 nm) is introduced, showing that the formation of multiple band edges utilizing higher-order modes confined in the thickness direction and the introduction of photonic superlattice structures enable significant absorption enhancement, exceeding that observed for conventional random scatterers. Subsequently, experimental evidence of this enhancement is demonstrated for a variety of thin-film Si solar cells: ∼500-nm-thick ultrathin microcrystalline silicon cells, few-µm-thick microcrystalline silicon cells, and ∼20-µm-thick thin single-crystalline silicon cells. The high short-circuit current densities and/or efficiencies observed for each cell structure confirm the effectiveness of using multiple band-edge resonant modes of photonic crystals for enhancing broadband absorption in actual solar cells.

  11. Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam

    Science.gov (United States)

    Bates, R.; Blue, A.; Christophersen, M.; Eklund, L.; Ely, S.; Fadeyev, V.; Gimenez, E.; Kachkanov, V.; Kalliopuska, J.; Macchiolo, A.; Maneuski, D.; Phlips, B. F.; Sadrozinski, H. F.-W.; Stewart, G.; Tartoni, N.; Zain, R. M.

    2013-01-01

    Reduced edge or ``edgeless'' detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.

  12. Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Magnetic Fields

    Science.gov (United States)

    Jauss, T.; Croell, A.; SorgenFrei, T.; Azizi, M.; Reimann, C.; Friedrich, J.; Volz, M. P.

    2014-01-01

    Solar cells made from directionally solidified silicon cover 57% of the photovoltaic industry's market [1]. One major issue during directional solidification of silicon is the precipitation of foreign phase particles. These particles, mainly SiC and Si3N4, are precipitated from the dissolved crucible coating, which is made of silicon nitride, and the dissolution of carbon monoxide from the furnace atmosphere. Due to their hardness and size of several hundred micrometers, those particles can lead to severe problems during the wire sawing process for wafering the ingots. Additionally, SiC particles can act as a shunt, short circuiting the solar cell. Even if the particles are too small to disturb the wafering process, they can lead to a grit structure of silicon micro grains and serve as sources for dislocations. All of this lowers the yield of solar cells and reduces the performance of cells and modules. We studied the behaviour of SiC particle depots during float-zone growth under an oxide skin, and strong static magnetic fields. For high field strengths of 3T and above and an oxide layer on the sample surface, convection is sufficiently suppressed to create a diffusive like regime, with strongly dampened convection [2, 3]. To investigate the difference between atomically rough phase boundaries and facetted growth, samples with [100] and [111] orientation were processed.

  13. Formation of hypereutectic silicon particles in hypoeutectic Al-Si alloys under the influence of high-intensity ultrasonic vibration

    Directory of Open Access Journals (Sweden)

    Xiaogang Jian

    2013-03-01

    Full Text Available The modification of eutectic silicon is of general interest since fine eutectic silicon along with fine primary aluminum grains improves mechanical properties and ductilities. In this study, high intensity ultrasonic vibration was used to modify the complex microstructure of aluminum hypoeutectic alloys. The ultrasonic vibrator was placed at the bottom of a copper mold with molten aluminum. Hypoeutectic Al-Si alloy specimens with a unique in-depth profile of microstructure distribution were obtained. Polyhedral silicon particles, which should form in a hypereutectic alloy, were obtained in a hypoeutectic Al-Si alloy near the ultrasonic radiator where the silicon concentration was higher than the eutectic composition. The formation of hypereutectic silicon near the radiator surface indicates that high-intensity ultrasonic vibration can be used to influence the phase transformation process of metals and alloys. The size and morphology of both the silicon phase and the aluminum phase varies with increasing distance from the ultrasonic probe/radiator. Silicon morphology develops into three zones. Polyhedral primary silicon particles present in zone I, within 15 mm from the ultrasonic probe/radiator. Transition from hypereutectic silicon to eutectic silicon occurs in zone II about 15 to 20 祄 from the ultrasonic probe/radiator. The bulk of the ingot is in zone III and is hypoeutectic Al-Si alloy containing fine lamellar and fibrous eutectic silicon. The grain size is about 15 to 25 祄 in zone I, 25 to 35 祄 in zone II, and 25 to 55 祄 in zone III. The morphology of the primary ?Al phase is also changed from dendritic (in untreated samples to globular. Phase evolution during the solidification process of the alloy subjected to ultrasonic vibration is described.

  14. Cellular dislocations patterns in monolike silicon: Influence of stress, time under stress and impurity doping

    Science.gov (United States)

    Oliveira, V. A.; Rocha, M.; Lantreibecq, A.; Tsoutsouva, M. G.; Tran-Thi, T. N.; Baruchel, J.; Camel, D.

    2018-05-01

    Besides the well-known local sub-grain boundaries (SGBs) defects, monolike Si ingots grown by Directional Solidification present distributed background cellular dislocation structures. In the present work, the influence of stress level, time under stress, and doping by O and Ge, on the formation of dislocation cells in monolike silicon, is analysed. This is achieved by performing a comparative study of the dislocation structures respectively obtained during crystallisation of pilot scale monolike ingots on Czochralski (CZ) and monolike seeds, during annealing of Float Zone (FZ), CZ, and 1 × 1020 at/cm3 Ge-doped CZ (GCZ) samples, and during 4-point bending of FZ and GCZ samples at 1300 °C under resolved stresses of 0.3, 0.7 and 1.9 MPa during 1-20 h. Synchrotron X-ray White-beam Topography and Rocking Curve Imaging (RCI) are applied to visualize the dislocation arrangements and to quantify the spatial distribution of the associated lattice distortions. Annealed samples and samples bent under 0.3 MPa present dislocation structures corresponding to transient creep stages where dislocations generated from surface defects are propagating and multiplying in the bulk. The addition of the hardening element Ge is found to block the propagation of dislocations from these surface sources during the annealing test, and to retard dislocation multiplication during bending under 0.3 MPa. On the opposite, cellular structures corresponding to the final stationary creep stage are obtained both in the non-molten seeds and grown part of monolike ingots and in samples bent under 0.7 and 1.9 MPa. A comparative discussion is made of the dynamics of formation of these final dislocation structures during deformation at high temperature and monolike growth.

  15. Knife-edge thin film field emission cathodes

    International Nuclear Information System (INIS)

    Lee, B.; Demroff, H.P.; Drew, M.M.; Elliott, T.S.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.

    1993-01-01

    Cathodes made of thin-film field emission arrays (FEA) have the advantages of high current density, pulsed emission, and low bias voltage operation. The authors have developed a technology to fabricate knife-edge field emission cathodes on (110) silicon wafers. The emitter geometry is optimized for efficient modulation at high frequency. Cathode fabrication progress and preliminary analysis of their applications in RF power sources are presented

  16. Fabrication and Characterisation of Silicon Waveguides for High-Speed Optical Signal Processing

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup

    This Ph.D. thesis treats various aspects of silicon photonics. From the limitations of silicon as a linear and nonlinear waveguide medium to its synergy with other waveguide materials. Various methods for reducing sidewall roughness and line edge roughness of silicon waveguides are attempted...... was too high for any practical applications. It is speculated that the attempt at creating a material with low density of dangling bonds was unsuccessful. Nevertheless, linear losses of 2.4dB/cm at 1550nm wavelength in the silicon waveguides remained sufficiently low that high speed nonlinear optical...

  17. The Linear Thermal Expansion of Bulk Nanocrystalline Ingot Iron from Liquid Nitrogen to 300 K.

    Science.gov (United States)

    Wang, S G; Mei, Y; Long, K; Zhang, Z D

    2009-09-17

    The linear thermal expansions (LTE) of bulk nanocrystalline ingot iron (BNII) at six directions on rolling plane and conventional polycrystalline ingot iron (CPII) at one direction were measured from liquid nitrogen temperature to 300 K. Although the volume fraction of grain boundary and residual strain of BNII are larger than those of CPII, LTE of BNII at the six measurement directions were less than those of CPII. This phenomenon could be explained with Morse potential function and the crystalline structure of metals. Our LTE results ruled out that the grain boundary and residual strain of BNII did much contribution to its thermal expansion. The higher interaction potential energy of atoms, the less partial derivative of interaction potential energy with respect to temperature T and the porosity free at the grain boundary of BNII resulted in less LTE in comparison with CPII from liquid nitrogen temperature to 300 K. The higher LTE of many bulk nanocrystalline materials resulted from the porosity at their grain boundaries. However, many authors attributed the higher LTE of many nanocrystalline metal materials to their higher volume fraction of grain boundaries.

  18. The Linear Thermal Expansion of Bulk Nanocrystalline Ingot Iron from Liquid Nitrogen to 300 K

    Directory of Open Access Journals (Sweden)

    Mei Y

    2009-01-01

    Full Text Available Abstract The linear thermal expansions (LTE of bulk nanocrystalline ingot iron (BNII at six directions on rolling plane and conventional polycrystalline ingot iron (CPII at one direction were measured from liquid nitrogen temperature to 300 K. Although the volume fraction of grain boundary and residual strain of BNII are larger than those of CPII, LTE of BNII at the six measurement directions were less than those of CPII. This phenomenon could be explained with Morse potential function and the crystalline structure of metals. Our LTE results ruled out that the grain boundary and residual strain of BNII did much contribution to its thermal expansion. The higher interaction potential energy of atoms, the less partial derivative of interaction potential energy with respect to temperature T and the porosity free at the grain boundary of BNII resulted in less LTE in comparison with CPII from liquid nitrogen temperature to 300 K. The higher LTE of many bulk nanocrystalline materials resulted from the porosity at their grain boundaries. However, many authors attributed the higher LTE of many nanocrystalline metal materials to their higher volume fraction of grain boundaries.

  19. Ge-Si single crystal growth when the begining of an ingot prepared by a new method is used as the begining of the feeding alloy

    International Nuclear Information System (INIS)

    Tahirov, V.I.; Quliyev, A.F.; Hasanov, Z.Y.; Qahramanov, N.F.

    2008-01-01

    Ge-Si system is used to describe binary solid solution single crystal growth when the beginning of the ingot prepared by a new method is used as the beginning of the feeding alloy. At first the feeding ingot is prepared by Bridgman method, then it is exposed to the zone melting. Content distribution of the feeding alloy and the grown crystal is determined by solving the continuity equation. The crystals grown by this method can be used for construction of the vary-zone structures

  20. Development and pilot production of three ingot-source beryllium sheet metal parts

    International Nuclear Information System (INIS)

    Floyd, D.R.

    1975-01-01

    Results of an extensive development program aimed at making three, separate, structural components from beryllium, using sheet-metal fabrication methods, are presented. Ingot-source beryllium sheet at thicknesses of 0.100, 0.125, and 0.170 inch is formed in a fully-recrystallized and in a partially-recrystallized condition. The tensile yield strength is 26,000 psi after full recrystallization. After partial recrystallization, tensile yield strength is between 35,000 and 45,000 psi, depending upon sheet thickness, heat treat temperature, and time at temperature. The high yield strength is retained in the parts after forming. (U.S.)

  1. The electrochemical corrosion of bulk nanocrystalline ingot iron in HCl solutions with different concentrations

    International Nuclear Information System (INIS)

    Wang, S.G.; Sun, M.; Cheng, P.C.; Long, K.

    2011-01-01

    Highlights: → The corrosion resistance of BNII was enhanced in comparison with CPII in 0.1-0.4 mol L -1 solution. → The function work of BNII is 0.47 eV larger that of CPII. → The energy state density of 4s electrons of BNII is 13.73% less than that of CPII. → BNII corrosion resistance was enhanced due to its larger work function and less 4s electrons weight. → The specific adsorption of Cl - on BNII was weaker than that of CPII due to its larger function work. - Abstract: We studied the corrosion properties of bulk nanocrystalline ingot iron (BNII) and conventional polycrystalline ingot iron (CPII) in HCl solutions from 0.1 mol L -1 to 0.4 mol L -1 at room temperature. The corrosion resistance of BNII was enhanced in comparison with CPII. We investigated the surface energy state densities of BNII and CPII with ultra-violet photoelectron spectroscopy. The energy state density of BNII 4s electrons was 13.73% less than that of CPII. The function work of BNII was 0.47 eV larger that of CPII. The corrosion resistance of BNII was enhanced in comparison with CPII due to its less energy state density of 4s electrons, larger work function and weaker Cl - specific adsorption.

  2. Radiation hardness properties of full-3D active edge silicon sensors

    Czech Academy of Sciences Publication Activity Database

    Da Via, C.; Hasi, J.; Kenney, C.; Linhart, V.; Parker, S.; Slavíček, T.; Watts, S. J.; Bém, Pavel; Horažďovský, T.; Pospíšil, S.

    2008-01-01

    Roč. 587, 2-3 (2008), s. 243-249 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : silicon detectors * radiation hardness * 3D Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.019, year: 2008

  3. Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots

    Energy Technology Data Exchange (ETDEWEB)

    Bolotnikov, A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Kopach, V. [Brookhaven National Lab. (BNL), Upton, NY (United States); Kopach, O. [Brookhaven National Lab. (BNL), Upton, NY (United States); Shcherbak, L. [Brookhaven National Lab. (BNL), Upton, NY (United States); Fochuk, P. [Brookhaven National Lab. (BNL), Upton, NY (United States); Filonenko, S. [Brookhaven National Lab. (BNL), Upton, NY (United States); James, R. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2017-08-01

    Solid-liquid phase transitions in Cd0.95-xMnxZn0.05Te alloys with x = 0.20 and 0.30 were investigated by differential thermal analysis (DTA). The heating/cooling rates were 5 and 10 K/min with a melt dwell time of 10, 30 and 60 minutes. Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots were grown by the vertical Bridgman method guided using the DTA results. Te inclusions (1-20 microns), typical for CdTe and Cd(Zn)Te crystals, were observed in the ingots by infrared transmission microscopy. The measured X-ray diffraction patterns showed that all compositions are found to be in a single phase. Using current-voltage (I-V) measurements, the resistivity of the samples from each ingot was estimated to be about 105 Ohm·cm. The optical transmission analysis demonstrated that the band-gap width of the investigated ingots increased from 1.77 to 1.88 eV with the increase of the MnTe content from 20 to 30 mol. %.

  4. Electronic structures of ultra-thin silicon carbides deposited on graphite

    International Nuclear Information System (INIS)

    Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

    2004-01-01

    Electronic structures of ultra-thin silicon carbide films have been investigated by X-ray photoelectron spectroscopy (XPS) and Si K-edge X-ray absorption near edge structure (XANES) using linearly polarized synchrotron soft X-rays. Silicon carbide films were deposited on the surface of highly oriented pyrolytic graphite (HOPG) by ion beam deposition method. Tetramethylsilane (Si(CH 3 ) 4 ) was used as a discharge gas. The XPS and XANES features for the thick layers were similar to those for the bulk SiC. For sub-monolayered films, the Si 1s binding energy in XPS was higher by 2.5 eV than that for bulk SiC. This suggests the existence of low-dimensional SiC x where the silicon atoms are more positively charged than those in bulk SiC. After annealing the sub-monolayered film at 850 deg. C, a new peak appeared around 1840 eV in the XANES spectrum. The energy of this new peak was lower than those for any other silicon compounds. The low-energy feature of the XANES peak suggests the existence of π*-like orbitals around the silicon atom. On the basis of the polarization dependencies of the XANES spectra, it was revealed that the direction of the π*-like orbitals are nearly perpendicular to the surface. We conclude that sub-monolayered SiC x film exhibits flat-lying structure of which configuration is similar to a single sheet of graphite

  5. X-ray metrology of an array of active edge pixel sensors for use at synchrotron light sources

    Science.gov (United States)

    Plackett, R.; Arndt, K.; Bortoletto, D.; Horswell, I.; Lockwood, G.; Shipsey, I.; Tartoni, N.; Williams, S.

    2018-01-01

    We report on the production and testing of an array of active edge silicon sensors as a prototype of a large array. Four Medipix3RX.1 chips were bump bonded to four single chip sized Advacam active edge n-on-n sensors. These detectors were then mounted into a 2 by 2 array and tested on B16 at Diamond Light Source with an x-ray beam spot of 2um. The results from these tests, compared with optical metrology demonstrate that this type of sensor is sensitive to the physical edge of the silicon, with only a modest loss of efficiency in the final two rows of pixels. We present the efficiency maps recorded with the microfocus beam and a sample powder diffraction measurement. These results give confidence that this sensor technology can be used effectively in larger arrays of detectors at synchrotron light sources.

  6. Plastic deformation of silicon dendritic web ribbons during the growth

    Science.gov (United States)

    Cheng, L. J.; Dumas, K. A.; Su, B. M.; Leipold, M. H.

    1984-01-01

    The distribution of slip dislocations in silicon dendritic web ribbons due to plastic deformation during the cooling phase of the growth was studied. The results show the existence of two distinguishable stress regions across the ribbon formed during the plastic deformation stage, namely, shear stress at the ribbon edges and tensile stress at the middle. In addition, slip dislocations caused by shear stress near the edges appear to originate at the twin plane.

  7. Technological development for super-high efficiency solar cells. Technological development of solar-high efficiency singlecrystalline silicon solar cells (high quality singlecrystalline silicon substrates); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Chokokoritsu tankessho silicon taiyo denchi no gijutsu kaihatsu (kohinshitsu tankessho silicon kiban no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development for high quality efficiency singlecrystalline silicon substrates in fiscal 1994. (1) On electromagnetic casting/once FZ bath method, a Si single crystal of 600mm long was successfully obtained by improvement of power source frequency and furnace parts. High carbon content resulted in no single crystal including solids. In undoped electromagnetic casting ingots, resistivities over 1500ohm-cm were obtained because of effective preventive measures from contaminants. (2) On electromagnetic melting CZ method, since vibration and temperature control of melt surface by magnetic shield was insufficient for stable pulling of single crystals, its practical use was hopeless. (3) On electron beam melting CZ method, a Si single crystal of 25mm in diameter was obtained by preventive measures from evaporation of Si and influence of deposits, and improved uniform deposition distribution in a furnace. The oscillation circuit constant of power source, and water-cooling copper crucible structure were also analyzed for the optimum design of electromagnetic melting furnaces. 3 figs., 1 tab.

  8. Production of Solar Grade (SoG) Silicon by Refining Liquid Metallurgical Grade (MG) Silicon: Final Report, 19 April 2001; FINAL

    International Nuclear Information System (INIS)

    Khattack, C. P.; Joyce, D. B.; Schmid, F.

    2001-01-01

    This report summarizes the results of the developed technology for producing SoG silicon by upgrading MG silicon with a cost goal of$20/kg in large-scale production. A Heat Exchanger Method (HEM) furnace originally designed to produce multicrystalline ingots was modified to refine molten MG silicon feedstock prior to directional solidification. Based on theoretical calculations, simple processing techniques, such as gas blowing through the melt, reaction with moisture, and slagging have been used to remove B from molten MG silicon. The charge size was scaled up from 1 kg to 300 kg in incremental steps and effective refining was achieved. After the refining parameters were established, improvements to increase the impurity reduction rates were emphasized. With this approach, 50 kg of commercially available as-received MG silicon was processed for a refining time of about 13 hours. A half life of and lt;2 hours was achieved, and the B concentration was reduced to 0.3 ppma and P concentration to 10 ppma from the original values of 20 to 60 ppma, and all other impurities to and lt;0.1 ppma. Achieving and lt;1 ppma B by this simple refining technique is a breakthrough towards the goal of achieving low-cost SoG silicon for PV applications. While the P reduction process was being optimized, the successful B reduction process was applied to a category of electronics industry silicon scrap previously unacceptable for PV feedstock use because of its high B content (50-400 ppma). This material after refining showed that its B content was reduced by several orders of magnitude, to(approx)1 ppma (0.4 ohm-cm, or about 5x1016 cm-3). NREL's Silicon Materials Research team grew and wafered small and lt;100 and gt; dislocation-free Czochralski (Cz) crystals from the new feedstock material for diagnostic tests of electrical properties, C and O impurity levels, and PV performance relative to similar crystals grown from EG feedstock and commercial Cz wafers. The PV conversion

  9. Analysis and calculation of macrosegregation in a casting ingot. MPS solidification model. Volume 1: Formulation and analysis

    Science.gov (United States)

    Maples, A. L.; Poirier, D. R.

    1980-01-01

    The physical and numerical formulation of a model for the horizontal solidification of a binary alloy is described. It can be applied in an ingot. The major purpose of the model is to calculate macrosegregation in a casting ingot which results from flow of interdendritic liquid during solidification. The flow, driven by solidification contractions and by gravity acting on density gradients in the interdendritic liquid, was modeled as flow through a porous medium. The symbols used are defined. The physical formulation of the problem leading to a set of equations which can be used to obtain: (1) the pressure field; (2) the velocity field: (3) mass flow and (4) solute flow in the solid plus liquid zone during solidification is presented. With these established, the model calculates macrosegregation after solidification is complete. The numerical techniques used to obtain solution on a computational grid are presented. Results, evaluation of the results, and recommendations for future development of the model are given. The macrosegregation and flow field predictions for tin-lead, aluminum-copper, and tin-bismuth alloys are included as well as comparisons of some of the predictions with published predictions or with empirical data.

  10. arXiv Time resolution of silicon pixel sensors

    CERN Document Server

    Riegler, W.

    2017-11-21

    We derive expressions for the time resolution of silicon detectors, using the Landau theory and a PAI model for describing the charge deposit of high energy particles. First we use the centroid time of the induced signal and derive analytic expressions for the three components contributing to the time resolution, namely charge deposit fluctuations, noise and fluctuations of the signal shape due to weighting field variations. Then we derive expressions for the time resolution using leading edge discrimination of the signal for various electronics shaping times. Time resolution of silicon detectors with internal gain is discussed as well.

  11. FY 1977 Annual report on Sunshine Project results. Research and development of photovoltaic power generation systems (Research and development of particle nonacceleration growth type silicon thin-film crystals); 1977 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Ryushi hikasoku seichogata silicon usumaku kessho no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1978-03-01

    As part of the research and development project for producing photovoltaic power generation systems at reduced cost, the R and D efforts are made for producing particle nonacceleration growth type silicon thin-film crystals. The research items are (1) research on thin-film crystals, and (2) research on cell-structuring method. The item (1) studies quantities, types and electrical properties of impurities and crystal defects in the polycrystalline ingots, produced by the Czochralski method from metal grade silicon and purified metal grade silicon stocks. Next, the substrate prepared above is coated with a thin film of silicon by the vapor-phase growth method with dichlorosilane as the source, to evaluate the thin-film crystals by measuring the crystal defects and lifetime of small numbers of carriers. The item (2) studies the effects of the solder dipping method. In addition, unevenness of photoelectric current is analyzed by a laser scanning microscope, to investigate the effects of the secondary impurities and crystal defects in the substrate crystals on photoelectric current. As a result, it is found that conversion efficiency is improved by grading the hole concentration in the p-type activated layer. The targets of 10 to 20 m{sup 2} as the area and 7 to 8% as the conversion efficiency are attained by preparing the crystals again. (NEDO)

  12. High-Tc superconducting antenna-coupled microbolometer on silicon

    Science.gov (United States)

    Rice, Joseph P.; Grossman, Erich N.; Borcherdt, L. J.; Rudman, D. A.

    1994-05-01

    A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-Tc superconductor YBa2Cu3O7 (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 X 10-6 W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 microsecond(s) , a responsivity of the 1000 V/W range, and a noise-equivalent power in the 10-12 W/Hz1/2 range at 1000 Hz.

  13. Sequential separation of transuranic elements and fission products from uranium metal ingots in electrolytic reduction process of spent PWR fuels

    International Nuclear Information System (INIS)

    Chang Heon Lee; Kih Soo Joe; Won Ho Kim; Euo Chang Jung; Kwang Yong Jee

    2009-01-01

    A sequential separation procedure has been developed for the determination of transuranic elements and fission products in uranium metal ingot samples from an electrolytic reduction process for a metallization of uranium dioxide to uranium metal in a medium of LiCl-Li 2 O molten salt at 650 deg C. Pu, Np and U were separated using anion-exchange and tri-n-butylphosphate (TBP) extraction chromatography. Cs, Sr, Ba, Ce, Pr, Nd, Sm, Eu, Gd, Zr and Mo were separated in several groups from Am and Cm using TBP and di(2-ethylhexyl)phosphoric acid (HDEHP) extraction chromatography. Effect of Fe, Ni, Cr and Mg, which were corrosion products formed through the process, on the separation of the analytes was investigated in detail. The validity of the separation procedure was evaluated by measuring the recovery of the stable metals and 239 Pu, 237 Np, 241 Am and 244 Cm added to a synthetic uranium metal ingot dissolved solution. (author)

  14. Characteristics of the natural uranium ingots developed in IPEN - CNEN/SP

    International Nuclear Information System (INIS)

    Soares, M.C.B.; Koshimizu, S.

    1990-01-01

    The natural uranium consists of two primary isotopes, the U sup(235) (0,7%) and the U sup(238) (99,3%). The isotopic separation carried out in order to obtain enriched uranium, generates a by-product called depleted uranium, which can be applied for industrial uses. The most singular property, from engineering standpoint, is its high density. When the density is the only important factor, the uranium has great advantage over other heavy metals related to economic and technical considerations. Among some applications of uranium are aircraft and missile counterweights, kinetics energy penetrators, radiation shielding, gyro rotors and oil-well sinker bars. The uranium ingot fabrication is done by direct reduction of UF, with magnesium, without remelting. The microstructure of as-cast uranium is, as in the other as-cast, formed by coarse and. (author)

  15. An all-silicone zoom lens in an optical imaging system

    Science.gov (United States)

    Zhao, Cun-Hua

    2013-09-01

    An all-silicone zoom lens is fabricated. A tunable metal ringer is fettered around the side edge of the lens. A nylon rope linking a motor is tied, encircling the notch in the metal ringer. While the motor is operating, the rope can shrink or release to change the focal length of the lens. A calculation method is developed to obtain the focal length and the zoom ratio. The testing is carried out in succession. The testing values are compared with the calculated ones, and they tally with each other well. Finally, the imaging performance of the all-silicone lens is demonstrated. The all-silicone lens has potential uses in cellphone cameras, notebook cameras, micro monitor lenses, etc.

  16. Mechanical Properties of Photovoltaic Silicon in Relation to Wafer Breakage

    Science.gov (United States)

    Kulshreshtha, Prashant Kumar

    This thesis focuses on the fundamental understanding of stress-modified crack-propagation in photovoltaic (PV) silicon in relation to the critical issue of PV silicon "wafer breakage". The interactions between a propagating crack and impurities/defects/residual stresses have been evaluated for consequential fracture path in a thin PV Si wafer. To investigate the mechanism of brittle fracture in silicon, the phase transformations induced by elastic energy released at a propagating crack-tip have been evaluated by locally stressing the diamond cubic Si lattice using a rigid Berkovich nanoindenter tip (radius ≈50 nm). Unique pressure induced phase transformations and hardness variations have been then related to the distribution of precipitates (O, Cu, Fe etc.), and the local stresses in the wafer. This research demonstrates for the first time the "ductile-like fracture" in almost circular crack path that significantly deviates from its energetically favorable crystallographic [110](111) system. These large diameter (≈ 200 mm) Si wafers were sliced to less than 180 microm thickness from a Czochralski (CZ) ingot that was grown at faster than normal growth rates. The vacancy (vSi) driven precipitation of oxygen at enhanced thermal gradients in the wafer core develops large localized stresses (upto 100 MPa) which we evaluated using Raman spectral analysis. Additional micro-FTIR mapping and microscopic etch pit measurements in the wafer core have related the observed crack path deviations to the presence of concentric ring-like distributions of oxygen precipitates (OPs). To replicate these "real-world" breakage scenarios and provide better insight on crack-propagation, several new and innovative tools/devices/methods have been developed in this study. An accurate quantitative profiling of local stress, phase changes and load-carrying ability of Si lattice has been performed in the vicinity of the controlled micro-cracks created using micro-indentations to represent

  17. Thermal Stability of Zone Melting p-Type (Bi, Sb)2Te3 Ingots and Comparison with the Corresponding Powder Metallurgy Samples

    Science.gov (United States)

    Jiang, Chengpeng; Fan, Xi'an; Hu, Jie; Feng, Bo; Xiang, Qiusheng; Li, Guangqiang; Li, Yawei; He, Zhu

    2018-04-01

    During the past few decades, Bi2Te3-based alloys have been investigated extensively because of their promising application in the area of low temperature waste heat thermoelectric power generation. However, their thermal stability must be evaluated to explore the appropriate service temperature. In this work, the thermal stability of zone melting p-type (Bi, Sb)2Te3-based ingots was investigated under different annealing treatment conditions. The effect of service temperature on the thermoelectric properties and hardness of the samples was also discussed in detail. The results showed that the grain size, density, dimension size and mass remained nearly unchanged when the service temperature was below 523 K, which suggested that the geometry size of zone melting p-type (Bi, Sb)2Te3-based materials was stable below 523 K. The power factor and Vickers hardness of the ingots also changed little and maintained good thermal stability. Unfortunately, the thermal conductivity increased with increasing annealing temperature, which resulted in an obvious decrease of the zT value. In addition, the thermal stabilities of the zone melting p-type (Bi, Sb)2Te3-based materials and the corresponding powder metallurgy samples were also compared. All evidence implied that the thermal stabilities of the zone-melted (ZMed) p-type (Bi, Sb)2Te3 ingots in terms of crystal structure, geometry size, power factor (PF) and hardness were better than those of the corresponding powder metallurgy samples. However, their thermal stabilities in terms of zT values were similar under different annealing temperatures.

  18. Sub-50 nm patterning of functional oxides by soft lithographic edge printing

    NARCIS (Netherlands)

    George, A.; ten Elshof, Johan E.

    2012-01-01

    We report a fast, versatile and reproducible method to make arbitrary nanoscale patterns of functional metal oxides by edge transfer printing of aqueous metal-loaded water-soluble polyacrylic acid (PAA) solutions on silicon. Patterns of ZnO, CuO, NiO and Fe2O3 with lateral dimensions below 50 nm

  19. Fabrication of 3D Silicon Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kok, A.; Hansen, T.E.; Hansen, T.A.; Lietaer, N.; Summanwar, A.; /SINTEF, Oslo; Kenney, C.; Hasi, J.; /SLAC; Da Via, C.; /Manchester U.; Parker, S.I.; /Hawaii U.

    2012-06-06

    Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.

  20. Ion distribution near a mask edge with arbitrary shape for VLSI IC applications

    International Nuclear Information System (INIS)

    Lutsch, A.G.K.; Oosthuizen, D.R.

    1985-01-01

    The profile of the mask edge during ion implantation determines the electrical field in the critical drain region of a MOS-transistor. Equal ion density lines are computed for various mask edges for the example of boron implanted into silicon at 70 keV. Four moments of the impurity depth distribution (without mask material are taken into consideration. Homogenisation and, therefore a higher noise immunity, can be obtained by the proper choice of the mask etching process. The influence of a too-thin mask material is also shown. (author)

  1. Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

    Science.gov (United States)

    Tai, Lixuan; Zhu, Daming; Liu, Xing; Yang, Tieying; Wang, Lei; Wang, Rui; Jiang, Sheng; Chen, Zhenhua; Xu, Zhongmin; Li, Xiaolong

    2018-06-01

    The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates. [Figure not available: see fulltext.

  2. Simple processing of high efficiency silicon solar cells

    International Nuclear Information System (INIS)

    Hamammu, I.M.; Ibrahim, K.

    2006-01-01

    Cost effective photovoltaic devices have been an area research since the development of the first solar cells, as cost is the major factor in their usage. Silicon solar cells have the biggest share in the photovoltaic market, though silicon os not the optimal material for solar cells. This work introduces a simplified approach for high efficiency silicon solar cell processing, by minimizing the processing steps and thereby reducing cost. The suggested procedure might also allow for the usage of lower quality materials compared to the one used today. The main features of the present work fall into: simplifying the diffusion process, edge shunt isolation and using acidic texturing instead of the standard alkaline processing. Solar cells of 17% efficiency have been produced using this procedure. Investigations on the possibility of improving the efficiency and using less quality material are still underway

  3. Ablative overlays for Space Shuttle leading edge ascent heat protection

    Science.gov (United States)

    Strauss, E. L.

    1975-01-01

    Ablative overlays were evaluated via a plasma-arc simulation of the ascent pulse on the leading edge of the Space Shuttle Orbiter. Overlay concepts included corkboard, polyisocyanurate foam, low-density Teflon, epoxy, and subliming salts. Their densities ranged from 4.9 to 81 lb per cu ft, and the thicknesses varied from 0.107 to 0.330 in. Swept-leading-edge models were fabricated from 30-lb per cu ft silicone-based ablators. The overlays were bonded to maintain the surface temperature of the base ablator below 500 F during ascent. Foams provided minimum-weight overlays, and subliming salts provided minimum-thickness overlays. Teflon left the most uniform surface after ascent heating.

  4. Frequency effects and properties of plasma deposited fluorinated silicon nitride

    International Nuclear Information System (INIS)

    Chang, C.; Flamm, D.L.; Ibbotson, D.E.; Mucha, J.A.

    1988-01-01

    The properties of low-hydrogen, fluorinated plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films grown using NF 3 /SiH 4 /N 2 feed mixtures in 200 kHz and 14 MHz discharges were compared. High-energy ion bombardment at 200 kHz is expected to enhance surface diffusion and chemical reconstruction. Compared to fluorinated silicon nitride deposited at 14 MHz under otherwise comparable conditions, the 200 kHz films had a lower Si--H bond concentration (approx. 21 cm -3 ), lower total hydrogen content (5--8 x 10 21 cm -3 ), better resistance to oxidation, lower compressive stress (-0.7 to -1.5 Gdyne/cm), and higher density (3.1 g/cm 3 ). The dielectric constant of better low-frequency Class I films was constant to 500 MHz, while that of high-frequency films fell up to 15% between 100 Hz and 10 MHz. The absorption edges of low-frequency PECVD fluorinated silicon nitride films were between 5.0 and 6.1 eV, which compare with 4.4 to 5.6 eV for the high-excitation frequency fluorinated material and 3 to 4 eV for conventional PECVD nitride. However high-frequency films may have fewer trap centers and a lower dielectric constant. 14 MHz p-SiN:F films grown with NH 3 as an auxiliary nitrogen source showed absorption edges similar to low-frequency material grown from NF 3 /SiH 4 /N 2 , but they have substantially more N--H bonding. The dielectric constant and absorption edge of these films were comparable to those of low-frequency p-SiN:F from NF 3 /SiH 4 /N 2

  5. The kinetics of dewetting ultra-thin Si layers from silicon dioxide

    International Nuclear Information System (INIS)

    Aouassa, M; Favre, L; Ronda, A; Berbezier, I; Maaref, H

    2012-01-01

    In this study, we investigate the kinetically driven dewetting of ultra-thin silicon films on silicon oxide substrate under ultra-high vacuum, at temperatures where oxide desorption and silicon lost could be ruled out. We show that in ultra-clean experimental conditions, the three different regimes of dewetting, namely (i) nucleation of holes, (ii) film retraction and (iii) coalescence of holes, can be quantitatively measured as a function of temperature, time and thickness. For a nominal flat clean sample these three regimes co-exist during the film retraction until complete dewetting. To discriminate their roles in the kinetics of dewetting, we have compared the dewetting evolution of flat unpatterned crystalline silicon layers (homogeneous dewetting), patterned crystalline silicon layers (heterogeneous dewetting) and amorphous silicon layers (crystallization-induced dewetting). The first regime (nucleation) is described by a breaking time which follows an exponential evolution with temperature with an activation energy E H ∼ 3.2 eV. The second regime (retraction) is controlled by surface diffusion of matter from the edges of the holes. It involves a very fast redistribution of matter onto the flat Si layer, which prevents the formation of a rim on the edges of the holes during both heterogeneous and homogeneous dewetting. The time evolution of the linear dewetting front measured during heterogeneous dewetting follows a characteristic power law x ∼ t 0.45 consistent with a surface diffusion-limited mechanism. It also evolves as x ∼ h -1 as expected from mass conservation in the absence of thickened rim. When the surface energy is isotropic (during dewetting of amorphous Si) the dynamics of dewetting is considerably modified: firstly, there is no measurable breaking time; secondly, the speed of dewetting is two orders of magnitude larger than for crystalline Si; and thirdly, the activation energy of dewetting is much smaller due to the different driving

  6. Characterization of electrical and optical properties of silicon based materials

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Guobin

    2009-12-04

    In this work, the electrical and luminescence properties of a series of silicon based materials used for photovoltaics, microelectronics and nanoelectronics have been investigated by means of electron beam induced current (EBIC), cathodoluminescence (CL), photoluminescence (PL) and electroluminescence (EL) methods. Photovoltaic materials produced by block casting have been investigated by EBIC on wafers sliced from different parts of the ingot. Various solar cell processings have been compared in parallel wafers by means of EBIC collection efficiency measurements and contrast-temperature C(T) behaviors of the extended defects, i. e. dislocations and grain boundaries (GBs). It was found that the solar cell processing with phosphorus diffusion gettering (PDG) followed with a SiN firing greatly reduces the recombination activity of extended defects at room temperature, and improves the bulk property simultaneously. A remaining activity of the dislocations indicates the limitation of the PDG at extended defects. Abnormal behavior of the dislocation activity after certain solar cell processes was also observed in the region with high dislocation density, the dislocations are activated after certain solar cell processings. In order to evaluate the properties of a thin polycrystalline silicon layer prepared by Al-induced layer exchange (Alile) technique, epitaxially layer grown on silicon substrate with different orientations was used as a model system to investigate the impact by the process temperature and the substrates. EBIC energy dependent collection efficiency measurements reveal an improvement of the epilayer quality with increasing substrate temperature during the growth from 450 C to 650 C, and a decrease of epilayer quality at 700 C. PL measurements on the epitaxially grown Si layer on silicon substrates revealed no characteristic dislocation-related luminescence (DRL) lines at room temperature and 77 K, while in the samples prepared by Alile process, intense

  7. Procedure for the qualification of a manufacturer of ingot iron pieces for application in nuclear power plant components

    International Nuclear Information System (INIS)

    Rahn, K.M.M.; Jusevicius, E.; Michael, H.

    1981-01-01

    The process for the qualification of 'Sao Caetano do Sul (Acos Villares S/A)' Plant as manufacturers of ingot iron pieces for application in components of Angra 2 and Angra 3 Nuclear Power Plants, is presented. The qualification was executed by IBQN - Instituto Brasileiro de Qualidade Nuclear - the organ officially in charge of the execution of qualification of suppliers of materials for the nuclear industry. (E.G.) [pt

  8. High-{Tc} superconducting antenna-coupled microbolometer on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Rice, J.P.; Grossman, E.N.; Borcherdt, L.J.; Rudman, D.A. [National Inst. of Standards and Technology, Boulder, CO (United States). Cryoelectronic Metrology Group

    1994-12-31

    A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-{Tc} superconductor YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 {times} 10{sup {minus}6} W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 {micro}s, a responsivity in the 1,000 V/W range, and a noise-equivalent power (NEP) in the 10{sup {minus}12} W/Hz{sup 1/2} range at 1,000 Hz.

  9. Control of HANARO NTD No.2 driving unit

    Energy Technology Data Exchange (ETDEWEB)

    Jung, H. S.; Kim, Y. K.; Choi, Y. S.; Woo, J. S.; Jeon, B. J. [KAERI, Taejon (Korea, Republic of)

    2002-10-01

    Automatic control system and control algorithm has been developed for Neutron Transmutation doping system No.2 (NTD No.2) of HANARO research reactor. A motor control system, a neutron flux measurement system using SPND(Self-Powered Neutron Detector) and a PC-based control and data acquisition system were developed. The motor control system was designed to control up-down and rotation of the silicon ingot motion and the set point of each motor speed could be easily adjusted by the control PC. Through the actual irradiation with the real silicon ingot under 24MW of reactor power, it has been confirmed that the motor control system developed could be applied to the commercial production. Rh-type SPNDs are used for real-time monitoring of the accumulated neutron irradiation. It has been verified, by the sample irradiation test for validation of the design that the neutron measurement system gives an accurate and stable signal. To precisely control the target fluence, the NTD control program has been designed so that the silicon ingot be automatically removed from its irradiation hole by the pre-defined irradiation time or accumulated neutron flux. Data acquisition system has been also developed for real-time monitoring and analysis of the analog signals, like SPND flux, control rod position and reactor power.

  10. Positive segregation as a function of buoyancy force during steel ingot solidification

    International Nuclear Information System (INIS)

    Radovic, Zarko; Jaukovic, Nada; Lalovic, Milisav; Tadic, Nebojsa

    2008-01-01

    We analyze theoretically and experimentally solute redistribution in the dendritic solidification process and positive segregation during solidification of steel ingots. Positive segregation is mainly caused by liquid flow in the mushy zone. Changes in the liquid steel velocity are caused by the temperature gradient and by the increase in the solid fraction during solidification. The effects of buoyancy and of the change in the solid fraction on segregation intensity are analyzed. The relationships between the density change, liquid fraction and the steel composition are considered. Such elements as W, Ni, Mo and Cr decrease the effect of the density variations, i.e. they show smaller tendency to segregate. Based on the modeling and experimental results, coefficients are provided controlling the effects of chemical composition, secondary dendrite arm spacing and the solid fraction.

  11. An all-silicone zoom lens in an optical imaging system

    International Nuclear Information System (INIS)

    Zhao Cun-Hua

    2013-01-01

    An all-silicone zoom lens is fabricated. A tunable metal ringer is fettered around the side edge of the lens. A nylon rope linking a motor is tied, encircling the notch in the metal ringer. While the motor is operating, the rope can shrink or release to change the focal length of the lens. A calculation method is developed to obtain the focal length and the zoom ratio. The testing is carried out in succession. The testing values are compared with the calculated ones, and they tally with each other well. Finally, the imaging performance of the all-silicone lens is demonstrated. The all-silicone lens has potential uses in cellphone cameras, notebook cameras, micro monitor lenses, etc. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  12. Properties on the edge: graphene edge energies, edge stresses, edge warping, and the Wulff shape of graphene flakes

    International Nuclear Information System (INIS)

    Branicio, Paulo S; Jhon, Mark H; Gan, Chee Kwan; Srolovitz, David J

    2011-01-01

    It has been shown that the broken bonds of an unreconstructed graphene edge generate compressive edge stresses leading to edge warping. Here, we investigate edge energies and edge stresses of graphene nanoribbons with arbitrary orientations from armchair to zigzag, considering both flat and warped edge shapes in the presence and absence of hydrogen. We use the second generation reactive empirical bond order potential to calculate the edge energies and stresses for clean and hydrogenated edges. Using these energies, we perform a Wulff construction to determine the equilibrium shapes of flat graphene flakes as a function of hydrogen chemical potential. While edge stresses for clean, flat edges are compressive, they become tensile if allowed to warp. Conversely, we find that edge energies change little (∼1%) with edge warping. Hydrogenation of the edges virtually eliminates both the edge energy and edge stresses. For warped edges an approximately linear relationship is found between amplitudes and wavelengths. The equilibrium shape of a graphene flake is determined by the value of the hydrogen chemical potential. For very small (and large) values of it the flakes have a nearly hexagonal (dodecagon) shape with zigzag oriented edges, while for intermediate values graphene flakes are found with complex shapes

  13. Amorphous silicon passivation for 23.3% laser processed back contact solar cells

    Science.gov (United States)

    Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

    2017-08-01

    This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

  14. Flexible Plug Repair for Shuttle Wing Leading Edge

    Science.gov (United States)

    Camarda, Charles J.; Sikora, Joseph; Smith, Russel; Rivers, H.; Scotti, Stephen J.; Fuller, Alan M.; Klacka, Robert; Reinders, Martin; Schwind, Francis; Sullivan, Brian; hide

    2012-01-01

    In response to the Columbia Accident Investigation Board report, a plug repair kit has been developed to enable astronauts to repair the space shuttle's wing leading edge (WLE) during orbit. The plug repair kit consists of several 17.78- cm-diameter carbon/silicon carbide (C/SiC) cover plates of various curvatures that can be attached to the refractory carbon-carbon WLE panels using a TZM refractory metal attach mechanism. The attach mechanism is inserted through the damage in the WLE panel and, as it is tightened, the cover plate flexes to conform to the curvature of the WLE panel within 0.050 mm. An astronaut installs the repair during an extravehicular activity (EVA). After installing the plug repair, edge gaps are checked and the perimeter of the repair is sealed using a proprietary material, developed to fill cracks and small holes in the WLE.

  15. Development of Solar Grade (SoG) Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Joyce, David B; Schmid, Frederick

    2008-01-18

    , as well as liners and coatings to allow the vacuum to be achieved. These developments also hold the promise of lower cost ingot growth, because several of these developments led to a reusable crucible. Liners and coatings were tested on 37 runs, under a variety of conditions. Although many of these did not fulfill the requirements of the program, several were very successful, particularly in allowing the crucible to be reused several times. The most interesting result was with slags and additives used to reduce P and Al. Although slags have been much studied with little success in removing P and B effectively, certain modeling suggested a particular type of slagging might be effective. This was tried, and found to be highly effective for P and surprisingly effective for B, as well. The best results indicate that > 99% of the P was removed, and > 75% of the B was removed by a slagging treatment. An operability issue involving separation of the slag and silicon was the final technical problem preventing the full-scale use of this technique, and there has been progress on this front. A slagging/additive technique is highly promising, because the rates of equilibration are very high, and this is a rapid technique that scales very well to large volumes with little increase in time. Materials of containment and slag/metal separation are issues that are continuing to be developed.

  16. Analysis and calculation of macrosegregation in a casting ingot, exhibits C and E

    Science.gov (United States)

    Poirier, D. R.; Maples, A. L.

    1984-01-01

    A computer model which describes the solidification of a binary metal alloy in an insulated rectangular mold with a temperature gradient is presented. A numerical technique, applicable to a broad class of moving boundary problems, was implemented therein. The solidification model described is used to calculate the macrosegregation within the solidified casting by coupling the equations for liquid flow in the solid/liquid or mushy zone with the energy equation for heat flow throughout the ingot and thermal convection in the bulk liquid portion. The rate of development of the solid can be automatically calculated by the model. Numerical analysis of such solidification parameters as enthalpy and boundary layer flow is displayed. On-line user interface and software documentation are presented.

  17. Ab initio simulation of amorphous silicon

    International Nuclear Information System (INIS)

    Cooper, N.C.; McKenzie, D.R.; Goringe, C.M.

    1999-01-01

    Full text: A first-principles Car-Parrinello molecular dynamics simulation of amorphous silicon is presented. Density Functional Theory is used to describe the forces between the atoms in a 64 atom supercell which is periodically repeated throughout space in order to generate an infinite network of atoms (a good approximation to a real solid). A quench from the liquid phase is used to achieve a quenched amorphous structure, which is subjected to an annealing cycle to improve its stability. The final, annealed network is in better agreement with experiment than any previous simulation of amorphous silicon. Significantly, the predicted average first-coordination numbers of 3.56 and 3.84 for the quenched and annealed structures from this simulation agree very closely with the experimental values of 3.55 and 3.90 respectively, whereas all previous simulations yielded first coordination numbers greater than 4. This improved agreement in coordination numbers is important because it supports the experimental finding that dangling bonds (which are associated with under-coordinated atoms) are more prevalent than floating bonds (the strained, longer bond of a five coordinate atom) in pure amorphous silicon. Finally, the effect of adding hydrogen to amorphous silicon was investigated by specifically placing hydrogen atoms at the likely defect sites. After a structural relaxation to optimise the positions of these hydrogen atoms, the localised electronic states associated with these defects are absent. Thus hydrogen is responsible for removing these defect states (which are able to trap carriers) from the edge of the band gap of the amorphous silicon. These results confirm the widely held ideas about the effect of hydrogen in producing remarkable improvements in the electronic properties of amorphous silicon

  18. Fundamental Research and Development for Improved Crystalline Silicon Solar Cells: Final Subcontract Report, March 2002 - July 2006

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.

    2007-11-01

    This report summarizes the progress made by Georgia Tech in the 2002-2006 period toward high-efficiency, low-cost crystalline silicon solar cells. This program emphasize fundamental and applied research on commercial substrates and manufacturable technologies. A combination of material characterization, device modeling, technology development, and complete cell fabrication were used to accomplish the goals of this program. This report is divided into five sections that summarize our work on i) PECVD SiN-induced defect passivation (Sections 1 and 2); ii) the effect of material inhomogeneity on the performance of mc-Si solar cells (Section 3); iii) a comparison of light-induced degradation in commercially grown Ga- and B-doped Czochralski Si ingots (Section 4); and iv) the understanding of the formation of high-quality thick-film Ag contacts on high sheet-resistance emitters (Section 5).

  19. Non-axisymmetric flexural vibrations of free-edge circular silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Dmitriev, A.V., E-mail: dmitriev@hbar.phys.msu.ru; Gritsenko, D.S.; Mitrofanov, V.P., E-mail: mitr@hbar.phys.msu.ru

    2014-02-07

    Non-axisymmetric flexural vibrations of circular silicon (111) wafers are investigated. The modes with azimuthal index 2⩽k⩽30 are electrostatically excited and monitored by a capacitive sensor. The splitting of the mode frequencies associated with imperfection of the wafer is observed. The measured loss factors for the modes with 6≲k≲26 are close to those calculated according to the thermoelastic damping theory, while clamping losses likely dominate for k≲6, and surface losses at the level of inverse Q-factor Q{sup −1}≈4×10{sup −6} prevail for the modes with large k. The modes demonstrate nonlinear behavior of mainly geometrical origin at large amplitudes.

  20. Effects of silicon-limitation on growth and morphology of Triparma laevis NIES-2565 (Parmales, Heterokontophyta).

    Science.gov (United States)

    Yamada, Kazumasa; Yoshikawa, Shinya; Ichinomiya, Mutsuo; Kuwata, Akira; Kamiya, Mitsunobu; Ohki, Kaori

    2014-01-01

    The order Parmales (Heterokontophyta) is a group of small-sized unicellular marine phytoplankton, which is distributed widely from tropical to polar waters. The cells of Parmales are surrounded by a distinctive cell wall, which consists of several siliceous plates fitting edge to edge. Phylogenetic and morphological analyses suggest that Parmales is one of the key organisms for elucidating the evolutionary origin of Bacillariophyceae (diatoms), the most successful heterokontophyta. The effects of silicon-limitation on growth and morphogenesis of plates were studied using a strain of Triparma laevis NIES-2565, which was cultured for the first time in artificial sea water. The cells of T. laevis were surrounded by eight plates when grown with sufficient silicon. However, plate formation became incomplete when cells were cultured in a medium containing low silicate (ca. silicon-limitation did not affect growth rate; cells continued to divide without changing their growth rate, even after all plates were lost. Loss of plates was reversible; when cells without plates were transferred to a medium containing sufficient silicate, regeneration of shield and ventral plates was followed by the formation of girdle and triradiate plates. The results indicate that the response to silicon-limitation of T. laevis is different from that of diatoms, where cell division becomes inhibited under such conditions.

  1. Electronic structure of silicon superlattices

    International Nuclear Information System (INIS)

    Krishnamurthy, S.; Moriarty, J.A.

    1984-01-01

    Utilizing a new complex-band-structure technique, the electronic structure of model Si-Si/sub 1-x/Ge/sub x/ and MOS superlattices has been obtained over a wide range of layer thickness d (11 less than or equal to d less than or equal to 110 A). For d greater than or equal to 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon

  2. Determination of density of band-gap states of hydrogenated amorphous silicon suboxide thin films

    International Nuclear Information System (INIS)

    Bacioglu, A.

    2005-01-01

    Variation of density of gap states of PECVD silicon suboxide films with different oxygen concentrations was evaluated through electrical and optical measurements. Optical transmission and constant photocurrent method (CPM) were used to determine absorption coefficient as a function of photon energy. From these measurements the localized density of states between the valance band mobility edge and Fermi level has been determined. To determine the variation of conduction band edge, steady state photoconductivity (SSPC), photoconductivity response time (PCRT) and transient photoconductivity (TPC) measurements were utilized. Results indicate that the conduction and valance band edges, both, widen monotonically with oxygen content

  3. Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

    Energy Technology Data Exchange (ETDEWEB)

    Drummond, T.J.

    1999-03-11

    Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

  4. Design optimization of a breast imaging system based on silicon microstrip detectors

    International Nuclear Information System (INIS)

    Stres, S.; Mikuz, M.

    2000-01-01

    A mammographic imaging set-up using silicon microstrip detectors in edge-on geometry was simulated using the GEANT package. Deposited energy in tissue of various thicknesses was evaluated and shown to agree to within 10% with reference calculations. Optimal energies as well as spectra for mammography with silicon detectors were determined by maximizing the figure of merit of a realistic imaging set-up. The scattered to primary radiation ratio was studied for various detector geometries. It was found that fan-shaped detectors are needed to maintain the image quality for divergent photon beams. (author)

  5. The POSEIDON Project

    International Nuclear Information System (INIS)

    Benoit, Ph.

    2009-01-01

    Concerns about clean air and global warming led car manufacturers to develop hybrid cars. A few models already reached the market but the manufacturers anticipate that the production figure will hit the million mark at the horizon 2010. Hybrid cars make an extensive use of power electronics, which implies - relatively - large size semi-conductor components. The initial doping of those components is best made by neutron irradiation, which achieves a better doping uniformity than chemical processes. Silicon doping becomes therefore a growing market for a number of research reactors, in supplement to their medical isotopes productions. With the SIDONIE facility in operation since 1992, the doping of silicon is not a new activity in the BR2 reactor. However, SIDONIE is limited to 5 inch diameter ingots whereas the trend is to 6 inch and 8 inch diameter or even 12 inch. The purpose of POSEIDON (POol Side Equipment for Irradiation and DOping of silicon by Neutrons) is to allow the large scale irradiation of 6 inch and 8 inch diameter silicon ingots

  6. Investigation of neutron fluence using fluence monitors for irradiation test at WWR-K

    International Nuclear Information System (INIS)

    Romanova, N.K.; Takemoto, N.

    2013-01-01

    Irradiation test of a Si ingot is planned using WWR-K in Institute of Nuclear Physics Republic of Kazakhstan (INP RK) to develop an irradiation technology for Si semiconductor production by Neutron Transmutation Doping (NTD) method in the framework of an international cooperation between INP RK and Japan Atomic Energy Agency (JAEA), Japan. It is possible to irradiate the Si ingot of 6 inch in diameter at the K-23 irradiation channel in the WWR-K. The preliminary irradiation test using 4 Al ingots was performed to evaluate the actual neutronic irradiation field at the K-23 channel in the WWR-K. Each Al ingot has the same dimension as the Si ingot, and 15 fluence monitors are equipped in it. Iron wire and aluminum-cobalt wire are inserted into them, and it is possible to evaluate both fast and thermal neutron fluxes by measurement of these radiation activities after irradiation. This report described the results of the preliminary irradiation test and the neutronic calculations by Monte Carlo method in order to evaluate the neutronic irradiation field in the irradiation position for the silicon ingot at the channel in the WWR-K. (authors)

  7. Precipitated iron. A limit on gettering efficacy in multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Fenning, D.P.; Hofstetter, J.; Bertoni, M.I.; Buonassisi, T. [Massachusetts Institute of Technology MIT, Cambridge, Massachusetts 02139 (United States); Coletti, G. [ECN Solar Energy, Westerduinweg 3, NL-1755 LE Petten (Netherlands); Lai, B. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Del Canizo, C. [Instituto de Energia Solar, Universidad Politecnica de Madrid, 28040 Madrid (Spain)

    2013-01-31

    A phosphorus diffusion gettering model is used to examine the efficacy of a standard gettering process on interstitial and precipitated iron in multicrystalline silicon. The model predicts a large concentration of precipitated iron remaining after standard gettering for most as-grown iron distributions. Although changes in the precipitated iron distribution are predicted to be small, the simulated post-processing interstitial iron concentration is predicted to depend strongly on the as-grown distribution of precipitates, indicating that precipitates must be considered as internal sources of contamination during processing. To inform and validate the model, the iron distributions before and after a standard phosphorus diffusion step are studied in samples from the bottom, middle, and top of an intentionally Fe-contaminated laboratory ingot. A census of iron-silicide precipitates taken by synchrotron-based X-ray fluorescence microscopy confirms the presence of a high density of iron-silicide precipitates both before and after phosphorus diffusion. A comparable precipitated iron distribution was measured in a sister wafer after hydrogenation during a firing step. The similar distributions of precipitated iron seen after each step in the solar cell process confirm that the effect of standard gettering on precipitated iron is strongly limited as predicted by simulation. Good agreement between the experimental and simulated data supports the hypothesis that gettering kinetics is governed by not only the total iron concentration but also by the distribution of precipitated iron. Finally, future directions based on the modeling are suggested for the improvement of effective minority carrier lifetime in multicrystalline silicon solar cells.

  8. A new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon

    International Nuclear Information System (INIS)

    Klein, K.M.; Park, C.; Yang, S.; Morris, S.; Do, V.; Tasch, F.

    1992-01-01

    We have developed a new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon. This paper reports that this new model is based on the dual Pearson semi-empirical implant depth profile model and the UT-MARLOWE Monte Carlo boron ion implantation model. This new model can predict with very high computational efficiency two-dimensional as-implanted boron profiles as a function of energy, dose, tilt angle, rotation angle, masking edge orientation, and masking edge thickness

  9. Energy-efficiency in inductive heating of forging ingots; Energieeffizienz bei der induktiven Erwaermung von Schmiedebloecken

    Energy Technology Data Exchange (ETDEWEB)

    Padberg, Michael; Doetsch, Erwin [ABP Induction Systems, Dortmund (Germany)

    2012-03-15

    The continuously increasing importance of the CO{sub 2} balance and of conservation of resources is resulting in ever greater demands for high energy-efficiency in the process used for heating of forging ingots. Plant and process engineering play roles of parallel significance in the fulfillment of these requirements, and this article focuses on both in equal degree. The shares of the individual components in the overall energy consumption of an induction heating installation are therefore firstly determined, and their respective potentials for optimization then discussed. The quality of the heating process itself, and its optimum design for reduction of energy consumption, are then examined. (orig.)

  10. Integration of mask and silicon metrology in DFM

    Science.gov (United States)

    Matsuoka, Ryoichi; Mito, Hiroaki; Sugiyama, Akiyuki; Toyoda, Yasutaka

    2009-03-01

    We have developed a highly integrated method of mask and silicon metrology. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. We have inspected the high accuracy, stability and reproducibility in the experiments of integration. The accuracy is comparable with that of the mask and silicon CD-SEM metrology. In this report, we introduce the experimental results and the application. As shrinkage of design rule for semiconductor device advances, OPC (Optical Proximity Correction) goes aggressively dense in RET (Resolution Enhancement Technology). However, from the view point of DFM (Design for Manufacturability), the cost of data process for advanced MDP (Mask Data Preparation) and mask producing is a problem. Such trade-off between RET and mask producing is a big issue in semiconductor market especially in mask business. Seeing silicon device production process, information sharing is not completely organized between design section and production section. Design data created with OPC and MDP should be linked to process control on production. But design data and process control data are optimized independently. Thus, we provided a solution of DFM: advanced integration of mask metrology and silicon metrology. The system we propose here is composed of followings. 1) Design based recipe creation: Specify patterns on the design data for metrology. This step is fully automated since they are interfaced with hot spot coordinate information detected by various verification methods. 2) Design based image acquisition: Acquire the images of mask and silicon automatically by a recipe based on the pattern design of CD-SEM.It is a robust automated step because a wide range of design data is used for the image acquisition. 3) Contour profiling and GDS data generation: An image profiling process is applied to the acquired image based

  11. Structures of sub-monolayered silicon carbide films

    International Nuclear Information System (INIS)

    Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

    2004-01-01

    The electronic and geometrical structures of silicon carbide thin films are presented. The films were deposited on graphite by ion-beam deposition using tetramethylsilane (TMS) as an ion source. In the Si K-edge near-edge X-ray absorption fine structure (NEXAFS) spectra for sub-monolayered film, sharp peaks due to the resonance from Si 1s to π*-like orbitals were observed, suggesting the existence of Si=C double bonds. On the basis of the polarization dependencies of the Si 1s → π* peak intensities, it is elucidated that the direction of the π*-like orbitals is just perpendicular to the surface. We conclude that the sub-monolayered SiC x film has a flat-lying hexagonal structure of which configuration is analogous to the single sheet of graphite

  12. Synthesis and characterization of carboxylic acid functionalized silicon nanoparticles

    Science.gov (United States)

    Shaner, Ted V.

    Silicon nanoparticles are of great interest in a great number of fields. Silicon nanoparticles show great promise particularly in the field of bioimaging. Carboxylic acid functionalized silicon nanoparticles have the ability to covalently bond to biomolecules through the conjugation of the carboxylic acid to an amine functionalized biomolecule. This thesis explores the synthesis of silicon nanoparticles functionalized by both carboxylic acids and alkenes and their carboxylic acid functionality. Also discussed is the characterization of the silicon nanoparticles by the use of x-ray spectroscopy. Finally, the nature of the Si-H bond that is observed on the surface of the silicon nanoparticles will be investigated using photoassisted exciton mediated hydrosilation reactions. The silicon nanoparticles are synthesized from both carboxylic acids and alkenes. However, the lack of solubility of diacids is a significant barrier to carboxylic acid functionalization by a mixture of monoacids and diacids. A synthesis route to overcome this obstacle is to synthesize silicon nanoparticles with terminal vinyl group. This terminal vinyl group is distal to the surface of the silicon nanoparticle. The conversion of the vinyl group to a carboxylic acid is accomplished by oxidative cleavage using ozonolysis. The carboxylic acid functionalized silicon nanoparticles were then successfully conjugated to amine functionalized DNA strand through an n-hydroxy succinimide ester activation step, which promotes the formation of the amide bond. Conjugation was characterized by TEM and polyacrylamide gel electrophoresis (PAGE). The PAGE results show that the silicon nanoparticle conjugates move slower through the polyacrylamide gel, resulting in a significant separation from the nonconjugated DNA. The silicon nanoparticles were then characterized by the use of x-ray absorption near edge spectroscopy (Xanes) and x-ray photoelectron spectroscopy (XPS) to investigate the bonding and chemical

  13. POSEIDON project

    International Nuclear Information System (INIS)

    Benoit, P.

    2007-01-01

    Concerns about clean air and global warming among their customers led car manufacturers to develop hybrid cars. A few models already reached the market but the manufacturers anticipate that the production figure will hit the million mark at the horizon 2010. Hybrid cars make an extensive use of power electronics, which implies - relatively - large size semi-conductor components. The initial doping of those components is best made by neutron irradiation, which achieves a better doping uniformity than chemical processes. Silicon doping becomes therefore a growing market for a number of research reactors, in supplement to their medical isotopes productions. With the SIDONIE facility in operation since 1992, the doping of silicon is not a new activity at BR2. However, SIDONIE is limited to 5 inch diameter ingots whereas the trend is to 6 inch and 8 inch diameter. The purpose of POSEIDON is to allow the large scale irradiation of 6 inch and 8 inch diameter silicon ingots

  14. Digital solar edge tracker for the Halogen Occultation Experiment

    Science.gov (United States)

    Mauldin, L. E., III; Moore, A. S.; Stump, C. W.; Mayo, L. S.

    1987-01-01

    The optical and electronic design of the Halogen Occultation Experiment (Haloe) elevation sun sensor is described. The Haloe instrument is a gas-correlation radiometer now being developed at NASA Langley for the Upper Atmosphere Research Satellite. The system uses a Galilean telescope to form a solar image on a linear silicon photodiode array. The array is a self-scanned monolithic CCD. The addresses of both solar edges imaged on the array are used by the control/pointing system to scan the Haloe science instantaneous field of view (IFOV) across the vertical solar diameter during instrument calibration and then to maintain the science IFOV 4 arcmin below the top edge during the science data occultation event. Vertical resolution of 16 arcsec and a radiometric dynamic range of 100 are achieved at the 700-nm operating wavelength. The design provides for loss of individual photodiode elements without loss of angular tracking capability.

  15. Preliminary modulation transfer function study on amorphous silicon

    International Nuclear Information System (INIS)

    Khairul Anuar Mohd Salleh; Ab Razak Hamzah; Mohd Ashhar Khalid

    2006-01-01

    Modulation Transfer Function, (MTF) is the scientific means of evaluating the fundamental spatial resolution performance of an imaging system. In the study, the modulation transfer function of an amorphous silicon (aSi) sensor array is measured by using Edge Spread Function (ESF) Technique which is extracting a profile from the linearised image of the sharp edge. The Platinum foil is used to determine the ESF. The detector under study was a 2,304 (h) x 3,200 (v) total pixel matrix, 127 μm2 pixel pitch, 57% fill factor and using Gd2O2S:Tb Kodak Lanex Regular as the conversion screen. The ESF measurement is done by using 75 - 100 kV range of x-ray with constant mA. (Author)

  16. Characterization of the adhesion of thin film by Cross-Sectional Nanoindentation. Analysis of the substrate edge chipping and the film delamination

    Science.gov (United States)

    Felder, Eric; Roy, Sébastien; Darque-Ceretti, Evelyne

    2011-07-01

    Cross-Sectional Nanoindentation (CSN) is a recent method for adhesion measurement of nanoscale thin films in Ultra-Large Scale Integrated circuits. In the case of ductile thin films, the motion of the substrate chip implies significant plastic deformation of the film and complex geometry of delaminated areas. This article recalls first the experimental procedure and the two main features observed in this test performed on various plane copper films deposited on silicon: the critical force producing silicon edge chipping increases linearly with the distance of the indenter to the interface; on the section the delaminated length of the film ( a-b) is proportional to the residual silicon chip displacement u and the ratio S=u/(a-b) depends on the manufacturing process of the film, and is so related to its adhesion to the substrate. One proposes a simple analysis of the silicon edge chipping. Then a model of pull-off of an elastic-strain hardening plastic film is developed, which suggests an explanation for the delamination process. Application of the model to experimental results starting from films plastic properties deduced from nanoindentation measurements provides plausible results. Some improvements for performing the CSN test are proposed in order to make easier its interpretation.

  17. A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

    Science.gov (United States)

    Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

    2017-08-01

    Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

  18. Fabrication of close-packed TES microcalorimeter arrays using superconducting molybdenum/gold transition-edge sensors

    Science.gov (United States)

    Finkbeiner, F. M.; Brekosky, R. P.; Chervenak, J. A.; Figueroa-Feliciano, E.; Li, M. J.; Lindeman, M. A.; Stahle, C. K.; Stahle, C. M.; Tralshawala, N.

    2002-02-01

    We present an overview of our efforts in fabricating Transition-Edge Sensor (TES) microcalorimeter arrays for use in astronomical x-ray spectroscopy. Two distinct types of array schemes are currently pursued: 5×5 single pixel TES array where each pixel is a TES microcalorimeter, and Position-Sensing TES (PoST) array. In the latter, a row of 7 or 15 thermally-linked absorber pixels is read out by two TES at its ends. Both schemes employ superconducting Mo/Au bilayers as the TES. The TES are placed on silicon nitride membranes for thermal isolation from the structural frame. The silicon nitride membranes are prepared by a Deep Reactive Ion Etch (DRIE) process into a silicon wafer. In order to achieve the concept of closely packed arrays without decreasing its structural and functional integrity, we have already developed the technology to fabricate arrays of cantilevered pixel-sized absorbers and slit membranes in silicon nitride films. Furthermore, we have started to investigate ultra-low resistance through-wafer micro-vias to bring the electrical contact out to the back of a wafer. .

  19. High-speed 2 × 2 silicon-based electro-optic switch with nanosecond switch time

    International Nuclear Information System (INIS)

    Xue-Jun, Xu; Shao-Wu, Chen; Hai-Hua, Xu; Yang, Sun; Yu-De, Yu; Jin-Zhong, Yu; Qi-Ming, Wang

    2009-01-01

    A 2 × 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach–Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1 mm in length and cross-section of 400 nm×340 nm. The measurement results show that the switch has a V π L π figure of merit of 0.145 V·cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and −28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated

  20. Self-assembling peptide hydrogels immobilized on silicon surfaces

    International Nuclear Information System (INIS)

    Franchi, Stefano; Battocchio, Chiara; Galluzzi, Martina; Navisse, Emanuele; Zamuner, Annj; Dettin, Monica; Iucci, Giovanna

    2016-01-01

    The hydrogels of self-assembling ionic complementary peptides have collected in the scientific community increasing consensus as mimetics of the extracellular matrix that can offer 3D supports for cell growth or be vehicles for the delivery of stem cells or drugs. Such scaffolds have also been proposed as bone substitutes for small defects as they promote beneficial effects on human osteoblasts. In this context, our research deals with the introduction of a layer of self-assembling peptides on a silicon surface by covalent anchoring and subsequent physisorption. In this work, we present a spectroscopic investigation of the proposed bioactive scaffolds, carried out by surface-sensitive spectroscopic techniques such as XPS (X-ray photoelectron spectroscopy) and RAIRS (Reflection Absorption Infrared Spectroscopy) and by state-of-the-art synchrotron radiation methodologies such as angle dependent NEXAFS (Near Edge X-ray Absorption Fine Structure). XPS studies confirmed the change in the surface composition in agreement with the proposed enrichments, and led to assess the self-assembling peptide chemical stability. NEXAFS spectra, collected in angular dependent mode at the N K-edge, allowed to investigate the self-assembling behavior of the macromolecules, as well as to determine their molecular orientation on the substrate. Furthermore, Infrared Spectroscopy measurements demonstrated that the peptide maintains its secondary structure (β-sheet anti-parallel) after deposition on the silicon surface. The complementary information acquired by means of XPS, NEXAFS and RAIRS lead to hypothesize a “layer-by-layer” arrangement of the immobilized peptides, giving rise to an ordered 3D nanostructure. - Highlights: • A self-assembling peptide (SAP) was covalently immobilized of on a flat silicon surface. • A physisorbed SAP layer was grown on top of the covalently immobilized peptide layer. • Molecular order and orientation of the peptide overlayer on the flat silicon

  1. Self-assembling peptide hydrogels immobilized on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Franchi, Stefano; Battocchio, Chiara; Galluzzi, Martina; Navisse, Emanuele [Department of Sciences, University “Roma Tre”, Via della Vasca Navale 79, Roma, 00146 (Italy); Zamuner, Annj; Dettin, Monica [Department of Industrial Engineering, University of Padua, Via Marzolo, 9, Padua, 35131 (Italy); Iucci, Giovanna, E-mail: giovanna.iucci@uniroma3.it [Department of Sciences, University “Roma Tre”, Via della Vasca Navale 79, Roma, 00146 (Italy)

    2016-12-01

    The hydrogels of self-assembling ionic complementary peptides have collected in the scientific community increasing consensus as mimetics of the extracellular matrix that can offer 3D supports for cell growth or be vehicles for the delivery of stem cells or drugs. Such scaffolds have also been proposed as bone substitutes for small defects as they promote beneficial effects on human osteoblasts. In this context, our research deals with the introduction of a layer of self-assembling peptides on a silicon surface by covalent anchoring and subsequent physisorption. In this work, we present a spectroscopic investigation of the proposed bioactive scaffolds, carried out by surface-sensitive spectroscopic techniques such as XPS (X-ray photoelectron spectroscopy) and RAIRS (Reflection Absorption Infrared Spectroscopy) and by state-of-the-art synchrotron radiation methodologies such as angle dependent NEXAFS (Near Edge X-ray Absorption Fine Structure). XPS studies confirmed the change in the surface composition in agreement with the proposed enrichments, and led to assess the self-assembling peptide chemical stability. NEXAFS spectra, collected in angular dependent mode at the N K-edge, allowed to investigate the self-assembling behavior of the macromolecules, as well as to determine their molecular orientation on the substrate. Furthermore, Infrared Spectroscopy measurements demonstrated that the peptide maintains its secondary structure (β-sheet anti-parallel) after deposition on the silicon surface. The complementary information acquired by means of XPS, NEXAFS and RAIRS lead to hypothesize a “layer-by-layer” arrangement of the immobilized peptides, giving rise to an ordered 3D nanostructure. - Highlights: • A self-assembling peptide (SAP) was covalently immobilized of on a flat silicon surface. • A physisorbed SAP layer was grown on top of the covalently immobilized peptide layer. • Molecular order and orientation of the peptide overlayer on the flat silicon

  2. Applications of 'edge-on' illuminated porous plate detectors for diagnostic X-ray imaging

    CERN Document Server

    Shikhaliev, P M

    2002-01-01

    Scanning X-ray imaging systems for non-invasive diagnostics have several advantages over conventional imaging systems using area detectors. They significantly reduce the detected scatter radiation, cover large areas and potentially provide high spatial resolution. Applications of one-dimensional gaseous detectors and 'edge-on' illuminated silicon strip detectors for scanning imaging systems are currently under intensive investigation. The purpose of this work is to investigate 'edge-on' illuminated Porous Plate (PP) detectors for applications in diagnostic X-ray imaging. MicroChannel Plate (MCP), which is a common type of PP, has previously been investigated as a detector in surface-on illumination mode for medical X-ray imaging. However, its detection efficiency was too low for medical imaging applications. In the present study, the PP are used in the 'edge-on' illumination mode. Furthermore, the structural parameters of different PP types are optimized to improve the detection efficiency in the diagnostic X...

  3. Radiation hard silicon particle detectors for HL-LHC—RD50 status report

    Energy Technology Data Exchange (ETDEWEB)

    Terzo, S., E-mail: Stefano.Terzo@mpp.mpg.de

    2017-02-11

    It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors. - Highlights: • The RD50 collaboration investigates the radiation hardness of silicon sensors. • Different approaches to simulate the detector response after irradiation are shown. • HV-CMOS are cost-effective solution for the outer pixel layers at HL-LHC. • 3D and thin planar sensors with slim edges are solutions for innermost layers at HL-LHC. • Sensors with intrinsic gain are investigated to develop ultra-fast silicon detectors.

  4. Characterization of atmospheric aerosols using Synchroton radiation total reflection X-ray fluorescence and Fe K-edge total reflection X-ray fluorescence-X-ray absorption near-edge structure

    Energy Technology Data Exchange (ETDEWEB)

    Fittschen, U.E.A. [Department of Chemistry, University of Hamburg, Martin-Luther-King-Platz 6, 20146 Hamburg (Germany)], E-mail: ursula.fittschen@chemie.uni-hamburg.de; Meirer, F. [Atominstitut, Vienna University of Technology, Stadionallee 2, 1020 Wien (Austria)], E-mail: fmeirer@ati.ac.at; Streli, C. [Atominstitut, Vienna University of Technology, Stadionallee 2, 1020 Wien (Austria)], E-mail: streli@ati.ac.at; Wobrauschek, P. [Atominstitut, Vienna University of Technology, Stadionallee 2, 1020 Wien (Austria)], E-mail: wobi@ati.ac.at; Thiele, J. [Department of Chemistry, University of Hamburg, Martin-Luther-King-Platz 6, 20146 Hamburg (Germany)], E-mail: Julian.Thiele@gmx.de; Falkenberg, G. [Hamburger Synchrotronstrahlungslabor at Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, 22603 Hamburg (Germany)], E-mail: falkenbe@mail.desy.de; Pepponi, G. [ITC-irst, Via Sommarive 18, 38050 Povo (Trento) (Italy)], E-mail: pepponi@itc.it

    2008-12-15

    In this study a new procedure using Synchrotron total reflection X-ray fluorescence (SR-TXRF) to characterize elemental amounts in atmospheric aerosols down to particle sizes of 0.015 um is presented. The procedure was thoroughly evaluated regarding bounce off effects and blank values. Additionally the potential of total reflection X-ray fluorescence-X-ray absorption near edge structure (SR-TXRF-XANES) for speciation of FeII/III down to amounts of 34 pg in aerosols which were collected for 1 h is shown. The aerosols were collected in the city of Hamburg with a low pressure Berner impactor on Si carriers covered with silicone over time periods of 60 and 20 min each. The particles were collected in four and ten size fractions of 10.0-8.0 {mu}m, 8.0-2.0 {mu}m, 2.0-0.13 {mu}m 0.13-0.015 {mu}m (aerodynamic particle size) and 15-30 nm, 30-60 nm, 60-130 nm, 130-250 nm, 250-500 nm, 0.5-1 {mu}m, 1-2 {mu}m, 2-4 {mu}m, 4-8 {mu}m, 8-16 {mu}m. Prior to the sampling 'bounce off' effects on Silicone and Vaseline coated Si carriers were studied with total reflection X-ray fluorescence. According to the results silicone coated carriers were chosen for the analysis. Additionally, blank levels originating from the sampling device and the calibration procedure were studied. Blank levels of Fe corresponded to 1-10% of Fe in the aerosol samples. Blank levels stemming from the internal standard were found to be negligible. The results from the Synchroton radiation total reflection X-ray fluorescence analysis of the aerosols showed that 20 min of sampling time gave still enough sample material for elemental determination of most elements. For the determination of the oxidation state of Fe in the aerosols different Fe salts were prepared as a reference from suspensions in isopropanol. The results from the Fe K-edge Synchroton radiation total reflection X-ray fluorescence-X-ray absorption near-edge structure analysis of the aerosol samples showed that mainly Fe(III) was present in

  5. Characterization of atmospheric aerosols using Synchroton radiation total reflection X-ray fluorescence and Fe K-edge total reflection X-ray fluorescence-X-ray absorption near-edge structure

    International Nuclear Information System (INIS)

    Fittschen, U.E.A.; Meirer, F.; Streli, C.; Wobrauschek, P.; Thiele, J.; Falkenberg, G.; Pepponi, G.

    2008-01-01

    In this study a new procedure using Synchrotron total reflection X-ray fluorescence (SR-TXRF) to characterize elemental amounts in atmospheric aerosols down to particle sizes of 0.015 um is presented. The procedure was thoroughly evaluated regarding bounce off effects and blank values. Additionally the potential of total reflection X-ray fluorescence-X-ray absorption near edge structure (SR-TXRF-XANES) for speciation of FeII/III down to amounts of 34 pg in aerosols which were collected for 1 h is shown. The aerosols were collected in the city of Hamburg with a low pressure Berner impactor on Si carriers covered with silicone over time periods of 60 and 20 min each. The particles were collected in four and ten size fractions of 10.0-8.0 μm, 8.0-2.0 μm, 2.0-0.13 μm 0.13-0.015 μm (aerodynamic particle size) and 15-30 nm, 30-60 nm, 60-130 nm, 130-250 nm, 250-500 nm, 0.5-1 μm, 1-2 μm, 2-4 μm, 4-8 μm, 8-16 μm. Prior to the sampling 'bounce off' effects on Silicone and Vaseline coated Si carriers were studied with total reflection X-ray fluorescence. According to the results silicone coated carriers were chosen for the analysis. Additionally, blank levels originating from the sampling device and the calibration procedure were studied. Blank levels of Fe corresponded to 1-10% of Fe in the aerosol samples. Blank levels stemming from the internal standard were found to be negligible. The results from the Synchroton radiation total reflection X-ray fluorescence analysis of the aerosols showed that 20 min of sampling time gave still enough sample material for elemental determination of most elements. For the determination of the oxidation state of Fe in the aerosols different Fe salts were prepared as a reference from suspensions in isopropanol. The results from the Fe K-edge Synchroton radiation total reflection X-ray fluorescence-X-ray absorption near-edge structure analysis of the aerosol samples showed that mainly Fe(III) was present in all particle size fractions

  6. INFLUENCE OF THE SILICON INTERLAYER ON DIAMOND-LIKE CARBON FILMS DEPOSITED ON GLASS SUBSTRATES

    Directory of Open Access Journals (Sweden)

    Deiler Antonio Lima Oliveira

    2012-06-01

    Full Text Available Diamond-like carbon (DLC films as a hard protective coating have achieved great success in a diversity of technological applications. However, adhesion of DLC films to substrates can restrict their applications. The influence of a silicon interlayer in order to improve DLC adhesion on glass substrates was investigated. Amorphous silicon interlayer and DLC films were deposited using plasma enhanced chemical vapor deposition from silane and methane, respectively. The bonding structure, transmittance, refraction index, and adherence of the films were also evaluated regarding the thickness of the silicon interlayer. Raman scattering spectroscopy did not show any substantial difference in DLC structure due to the interlayer thickness of the silicon. Optical measurements showed a sharp decrease of transmittance in the ultra-violet region caused by the fundamental absorption of the light. In addition, the absorption edge of transmittance shifted toward longer wavelength side in the ultra-violet region as the thickness of the silicon interlayer increased. The tribological results showed an increase of DLC adherence as the silicon interlayer increased, which was characterized by less cracks around the grooves.

  7. The Impact of Metallic Impurities on Minority Carrier Lifetime in High Purity N-type Silicon

    Science.gov (United States)

    Yoon, Yohan

    Boron-doped p-type silicon is the industry standard silicon solar cell substrate. However, it has serious limitations: iron boron (Fe-B) pairs and light induced degradation (LID). To suppress LID, the replacement of boron by gallium as a p-type dopant has been proposed. Although this eliminates B-O related defects, gallium-related pairing with iron, oxygen, and carbon can reduce lifetime in this material. In addition resistivity variations are more pronounced in gallium doped ingots, however Continuous-Czochralski (c-Cz) growth technologies are being developed to overcome this problem. In this work lifetime limiting factors and resistivity variations have been investigated in this material. The radial and axial variations of electrically active defects were observed using deep level transient spectroscopy (DLTS) these have been correlated to lifetime and resistivity variations. The DLTS measurements demonstrated that iron-related pairs are responsible for the lifetime variations. Specifically, Fe-Ga pairs were found to be important recombination sites and are more detrimental to lifetime than Fei. Typically n-type silicon has a higher minority carrier lifetime than p-type silicon with similar levels of contamination. That is because n-type silicon is more tolerant to metallic impurities, especially Fe. Also, it has no serious issues in relation to lifetime degradation, such as FeB pairs and light-induced degradation (LID). However, surface passivation of the p + region in p+n solar cells is much more problematic than the n+p case where silicon nitride provides very effective passivation of the cell. SiO2 is the most effective passivation for n type surfaces, but it does not work well on B-doped surfaces, resulting in inadequate performance. Al2O3 passivation layer suggested for B-doped emitters. With this surface passivation layer a 23.2 % conversion efficiency has been achieved. After this discovery n-type silicon is now being seriously considered for

  8. Unanticipated C=C bonds in covalent monolayers on silicon revealed by NEXAFS.

    Science.gov (United States)

    Lee, Michael V; Lee, Jonathan R I; Brehmer, Daniel E; Linford, Matthew R; Willey, Trevor M

    2010-02-02

    Interfaces are crucial to material properties. In the case of covalent organic monolayers on silicon, molecular structure at the interface controls the self-assembly of the monolayers, which in turn influences the optical properties and electrical transport. These properties intrinsically affect their application in biology, tribology, optics, and electronics. We use near-edge X-ray absorption fine structure spectroscopy to show that the most basic covalent monolayers formed from 1-alkenes on silicon retain a double bond in one-fifth to two-fifths of the resultant molecules. Unsaturation in the predominantly saturated monolayers will perturb the regular order and affect the dependent properties. The presence of unsaturation in monolayers produced by two different methods also prompts the re-evaluation of other radical-based mechanisms for forming covalent monolayers on silicon.

  9. Anchoring of alkyl chain molecules on oxide surface using silicon alkoxide

    Energy Technology Data Exchange (ETDEWEB)

    Narita, Ayumi, E-mail: narita.ayumi@jaea.go.jp [Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki-ken 319-1195 (Japan); Graduate School of Science and Engineering, Ibaraki University, Bunnkyo, Mito-shi, Ibaraki-ken 310-8512 (Japan); Baba, Yuji; Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Hirao, Norie [Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki-ken 319-1195 (Japan); Yaita, Tsuyoshi [Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki-ken 319-1195 (Japan); Graduate School of Science and Engineering, Ibaraki University, Bunnkyo, Mito-shi, Ibaraki-ken 310-8512 (Japan)

    2012-01-01

    Chemical states of the interfaces between octadecyl-triethoxy-silane (ODTS) molecules and sapphire surface were measured by X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure (NEXAFS) using synchrotron soft X-rays. The nearly self-assembled monolayer of ODTS was formed on the sapphire surface. For XPS and NEXAFS measurements, it was elucidated that the chemical bond between silicon alkoxide in ODTS and the surface was formed, and the alkane chain of ODTS locates upper side on the surface. As a result, it was elucidated that the silicon alkoxide is a good anchor for the immobilization of organic molecules on oxides.

  10. Investigation of carrier density and mobility in microcrystalline silicon alloys using Hall effect and thermopower measurements; Untersuchung der Ladungstraegerkonzentration und -beweglichkeit in mikrokristallinen Siliziumlegierungen mit Hall-Effekt und Thermokraft

    Energy Technology Data Exchange (ETDEWEB)

    Sellmer, Christian

    2012-08-31

    The electronic properties of amorphous and microcrystalline silicon layers in thin-film solar cells significantly affect the efficiency of solar cells. An important property of the individual layer is the electronic transport, which is described by the variables conductivity, photoconductivity, mobility, and carrier concentration. In the past, individual characterization methods were typically used to determine the electronic properties. Using the combination of Hall effect, conductivity, and thermoelectric power measurements additional variables can be derived, such as the effective density of states at the valence and conduction band edge, making a more detailed description of the material possible. To systematically study the electronic properties - in particular carrier mobility and carrier concentration - various series of silicon films are prepared for this work including microcrystalline silicon layers of different doping and crystallinity and a series of silicon films where the Fermi level is moved by irradiation with high energy electrons on one and the same sample. The results show that the transition from amorphous to microcrystalline transport is relatively abrupt. If the electron transport takes place in only amorphous regions, it is marked by the sign anomaly of the Hall effect. If a continuous crystalline path exists, the electronic properties are dominated by the crystalline volume fraction. The results of the measurements of silicon layers are compared with those of microcrystalline silicon carbide samples. Silicon carbide is especially interesting for future applications in thin-film solar cells due to high transparency and high conductivity. It is shown that the effective density of states at the valence and conduction band edge as a function of temperature in p- and n-type microcrystalline silicon and silicon carbide samples largely coincide with those of crystalline silicon or silicon carbide. A square root shaped profile of the density of

  11. Copper alloys with improved properties: standard ingot metallurgy vs. powder metallurgy

    Directory of Open Access Journals (Sweden)

    Milan T. Jovanović

    2014-09-01

    Full Text Available Three copper-based alloys: two composites reinforced with Al2O3 particles and processed through powder metallurgy (P/M route, i.e. by internal oxidation (Cu-2.5Al composite and by mechanical alloying (Cu-4.7Al2O3 and Cu-0.4Cr-0.08Zr alloy produced by ingot metallurgy (vacuum melting and casting were the object of this investigation. Light microscope and scanning electron microscope (SEM equipped with electron X-ray spectrometer (EDS were used for microstructural characterization. Microhardness and electrical conductivity were also measured. Compared to composite materials, Cu-0.4Cr-0.08Zr alloy possesses highest electrical conductivity in the range from 20 to 800 ℃, whereas the lowest conductivity shows composite Cu-2.5Al processed by internal oxidation. In spite to somewhat lower electrical conductivity (probably due to inadequate density, Cu-2.5Al composite exhibits thermal stability enabling its application at much higher temperatures than materials processed by mechanical alloying or by vacuum melting and casting.

  12. The influence of the mould cooling temperature on the surface appearance and the internal quality of ESR ingots

    Science.gov (United States)

    Kubin, M.; Ofner, B.; Holzgruber, H.; Schneider, R.; Enzenhofer, D.; Filzwieser, A.; Konetschnik, S.

    2016-07-01

    One of the main benefits of the ESR process is to obtain an ingot surface which is smooth and allows a subsequent forging operation without any surface dressing. The main influencing factor on surface quality is the precise controlling of the process such as melt rate and electrode immersion depth. However, the relatively strong cooling effect of water as a cooling medium can result in the solidification of the meniscus of the liquid steel on the boundary liquid steel and slag which is most likely the origin of surface defects. The usage of different cooling media like ionic liquids, a salt solution which can be heated up to 250°C operating temperature might diminish the meniscus solidification phenomenon. This paper shows the first results of the usage of an ionic liquid as a mould cooling medium. In doing so, 210mm diameter ESR ingots were produced with the laboratory scale ESR furnace at the university of applied science using an ionic liquid cooling device developed by the company METTOP. For each trial melt different inlet and outlet temperatures of the ionic liquid were chosen and the impact on the surface appearance and internal quality were analyzed. Furthermore the influence on the energy balance is also briefly highlighted. Ultimately, an effect of the usage of ionic liquids as a cooling medium could be determined and these results will be described in detail within the scope of this paper.

  13. Relationship between micro-porosity and tensile properties of 6063 alloy

    Directory of Open Access Journals (Sweden)

    Li Xiehua

    2013-01-01

    Full Text Available The micro-porosity is usually present in the as-cast microstructure, which decreases the tensile strength and ductility and therefore limit the application of cast aluminum parts. Although much work has been done to investigate the effects of various casting parameters on the formation of porosity in various aluminum alloys, up to now, little information has been available for the relationship between micro-porosity and tensile properties of 6063 alloy. In this study, the influences of size and area fraction of micro-porosity on the tensile properties and fracture behavior of 6063 aluminum alloy were investigated by means of tensile testing, optical microscopy (OM, and scanning electron microscopy (SEM. The tensile tests were conducted in air at 100 ℃, 200 ℃ and 300 ℃, respectively. Results show that the large micro-porosity with sizes between 100 μm and 800 μm located at the center and top of the ingot, while the small micro-porosity with size between 2 μm and 60 μm distributed at the edge and bottom of the ingot. The area fraction of micro-porosity at the center of the ingot is much bigger than that at the edge of the ingot. When tested at 100 ℃, with the decrease in the area fraction of micro-porosity from the top of the ingot to the bottom of the ingot, the ultimate tensile strength, yield strength and the elongation are increased from 82 to 99 MPa, 32 to 66 MPa and 7% to 11%, respectively. When the temperature is no more than 200 ℃, the strain hardening exponent decreases with an increase in the area fraction of micro-porosity; while the deviation disappears when the temperature reaches 300 ℃. The fracture mode of the alloy is greatly influenced by the size and area fraction of the micro-porosity.

  14. Front-side biasing of n-in-p silicon strip detectors

    CERN Document Server

    Baselga Bacardit, Marta; Dierlamm, Alexander Hermann; Dragicevic, Marko Gerhart; Konig, Axel; Pree, Elias; Metzler, Marius

    2018-01-01

    Front-side biasing is an alternative method to bias a silicon sensor. Instead of directly applying high voltage to the back-side, one can exploit the conductive properties of the edge region to bias a detector exclusively via top-side connections. This option can be beneficial for the detector design and might help to facilitate the assembly process of modules. The effective bias voltage is affected by the resistance of the edge region and the sensor current. The measurements of n-in-p sensors performed to qualify this concept have shown that the voltage drop emerging from this resistance is negligible before irradiation. After irradiation, however, the resistivity of the edge region increases with fluence and saturates in the region of 10$^{7}\\,\\Omega$ at a fluence of 1$\\,\\cdot\\,10^{15}\\,$n$_{\\textrm{eq}}$cm$^{-2}$. The measurements are complemented by TCAD simulations and interpretations of the observed effects.

  15. Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Static Magnetic Fields

    Science.gov (United States)

    Jauss, T.; SorgenFrei, T.; Croell, A.; Azizi, M.; Reimann, C.; Friedrich, J.; Volz, M. P.

    2014-01-01

    In the photovoltaics industry, the largest market share is represented by solar cells made from multicrystalline silicon, which is grown by directional solidification. During the growth process, the silicon melt is in contact with the silicon nitride coated crucible walls and the furnace atmosphere which contains carbon monoxide. The dissolution of the crucible coating, the carbon bearing gas, and the carbon already present in the feedstock, lead to the precipitation of silicon carbide, and silicon nitride, at later stages of the growth process. The precipitation of Si3N4 and SiC particles of up to several hundred micrometers in diameter leads to severe problems during the wire sawing process for wafering the ingots. Furthermore the growth of the silicon grains can be negatively influenced by the presence of particles, which act as nucleation sources and lead to a grit structure of small grains and are sources for dislocations. If doped with Nitrogen from the dissolved crucible coating, SiC is a semi conductive material, and can act as a shunt, short circuiting parts of the solar cell. For these reasons, the incorporation of such particles needs to be avoided. In this contribution we performed model experiments in which the transport of intentionally added SiC particles and their interaction with the solid-liquid interface during float zone growth of silicon in strong steady magnetic fields was investigated. SiC particles of 7µm and 60µm size are placed in single crystal silicon [100] and [111] rods of 8mm diameter. This is achieved by drilling a hole of 2mm diameter, filling in the particles and closing the hole by melting the surface of the rod until a film of silicon covers the hole. The samples are processed under a vacuum of 1x10(exp -5) mbar or better, to prevent gas inclusions. An oxide layer to suppress Marangoni convection is applied by wet oxidation. Experiments without and with static magnetic field are carried out to investigate the influence of melt

  16. Characterization of the Electronic Structure of Silicon Nanoparticles Using X-ray Absorption and Emission

    Energy Technology Data Exchange (ETDEWEB)

    Vaverka, April Susan Montoya [Univ.of California, Davis, CA (United States)

    2008-01-01

    Resolving open questions regarding transport in nanostructures can have a huge impact on a broad range of future technologies such as light harvesting for energy. Silicon has potential to be used in many of these applications. Understanding how the band edges of nanostructures move as a function of size, surface termination and assembly is of fundamental importance in understanding the transport properties of these materials. In this thesis work I have investigated the change in the electronic structure of silicon nanoparticle assemblies as the surface termination is changed. Nanoparticles are synthesized using a thermal evaporation technique and sizes are determined using atomic force microscopy (AFM). By passivating the particles with molecules containing alcohol groups we are able to modify the size dependent band edge shifts. Both the valence and conduction bands are measured using synchrotron based x-ray absorption spectroscopy (XAS) and soft x-ray fluorescence (SXF) techniques. Particles synthesized via recrystallization of amorphous silicon/SiO2 multilayers of thicknesses below 10 nm are also investigated using the synchrotron techniques. These samples also show quantum confinement effects but the electronic structure is different from those synthesized via evaporation methods. The total bandgap is determined for all samples measured. The origins of these differences in the electronic structures are discussed.

  17. Edgeless silicon sensors for Medipix-based large-area X-ray imaging detectors

    International Nuclear Information System (INIS)

    Bosma, M J; Visser, J; Koffeman, E N; Evrard, O; De Moor, P; De Munck, K; Tezcan, D Sabuncuoglu

    2011-01-01

    Some X-ray imaging applications demand sensitive areas exceeding the active area of a single sensor. This requires a seamless tessellation of multiple detector modules with edgeless sensors. Our research is aimed at minimising the insensitive periphery that isolates the active area from the edge. Reduction of the edge-defect induced charge injection, caused by the deleterious effects of dicing, is an important step. We report on the electrical characterisation of 300 μm thick edgeless silicon p + -ν-n + diodes, diced using deep reactive ion etching. Sensors with both n-type and p-type stop rings were fabricated in various edge topologies. Leakage currents in the active area are compared with those of sensors with a conventional design. As expected, we observe an inverse correlation between leakage-current density and both the edge distance and stop-ring width. From this correlation we determine a minimum acceptable edge distance of 50 μm. We also conclude that structures with a p-type stop ring show lower leakage currents and higher breakdown voltages than the ones with an n-type stop ring.

  18. Broadband and scalable optical coupling for silicon photonics using polymer waveguides

    Science.gov (United States)

    La Porta, Antonio; Weiss, Jonas; Dangel, Roger; Jubin, Daniel; Meier, Norbert; Horst, Folkert; Offrein, Bert Jan

    2018-04-01

    We present optical coupling schemes for silicon integrated photonics circuits that account for the challenges in large-scale data processing systems such as those used for emerging big data workloads. Our waveguide based approach allows to optimally exploit the on-chip optical feature size, and chip- and package real-estate. It further scales well to high numbers of channels and is compatible with state-of-the-art flip-chip die packaging. We demonstrate silicon waveguide to polymer waveguide coupling losses below 1.5 dB for both the O- and C-bands with a polarisation dependent loss of <1 dB. Over 100 optical silicon waveguide to polymer waveguide interfaces were assembled within a single alignment step, resulting in a physical I/O channel density of up to 13 waveguides per millimetre along the chip-edge, with an average coupling loss of below 3.4 dB measured at 1310 nm.

  19. Effects of transverse temperature field nonuniformity on stress in silicon sheet growth

    Science.gov (United States)

    Mataga, P. A.; Hutchinson, J. W.; Chalmers, B.; Bell, R. O.; Kalejs, J. P.

    1987-01-01

    Stress and strain rate distributions are calculated using finite element analysis for steady-state growth of thin silicon sheet temperature nonuniformities imposed in the transverse (sheet width) dimension. Significant reductions in residual stress are predicted to occur for the case where the sheet edge is cooled relative to its center provided plastic deformation with high creep rates is present.

  20. Gas microstrip detectors on polymer, silicon and glass substrates

    International Nuclear Information System (INIS)

    Barasch, E.F.; Demroff, H.P.; Drew, M.M.; Elliott, T.S.; Gaedke, R.M.; Goss, L.T.; Kasprowicz, T.B.; Lee, B.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.; Vanstraelen, G.; Wahl, J.

    1993-01-01

    We present results on the performance of Gas Microstrip Detectors on various substrates. These include a 300 μm anode-anode pitch pattern on Tempax borosilicate glass and ABS/copolyether, a 200 μm pattern on Upilex ''S'' polyimide, Texin 4215, Tedlar, ion-implanted Kapton, orientation-dependent etched flat-topped silicon (''knife-edge chamber''), and iron-vanadium glass, and a 100 μm pitch pattern on Upilex ''S'' and ion-implanted Kapton. (orig.)

  1. Turbine Airfoil With CMC Leading-Edge Concept Tested Under Simulated Gas Turbine Conditions

    Science.gov (United States)

    Robinson, R. Craig; Hatton, Kenneth S.

    2000-01-01

    Silicon-based ceramics have been proposed as component materials for gas turbine engine hot-sections. When the Navy s Harrier fighter experienced engine (Pegasus F402) failure because of leading-edge durability problems on the second-stage high-pressure turbine vane, the Office of Naval Research came to the NASA Glenn Research Center at Lewis Field for test support in evaluating a concept for eliminating the vane-edge degradation. The High Pressure Burner Rig (HPBR) was selected for testing since it could provide temperature, pressure, velocity, and combustion gas compositions that closely simulate the engine environment. The study focused on equipping the stationary metal airfoil (Pegasus F402) with a ceramic matrix composite (CMC) leading-edge insert and evaluating the feasibility and benefits of such a configuration. The test exposed the component, with and without the CMC insert, to the harsh engine environment in an unloaded condition, with cooling to provide temperature relief to the metal blade underneath. The insert was made using an AlliedSignal Composites, Inc., enhanced HiNicalon (Nippon Carbon Co. LTD., Yokohama, Japan) fiber-reinforced silicon carbide composite (SiC/SiC CMC) material fabricated via chemical vapor infiltration. This insert was 45-mils thick and occupied a recessed area in the leading edge and shroud of the vane. It was designed to be free floating with an end cap design. The HPBR tests provided a comparative evaluation of the temperature response and leading-edge durability and included cycling the airfoils between simulated idle, lift, and cruise flight conditions. In addition, the airfoils were aircooled, uniquely instrumented, and exposed to the exact set of internal and external conditions, which included gas temperatures in excess of 1370 C (2500 F). In addition to documenting the temperature response of the metal vane for comparison with the CMC, a demonstration of improved leading-edge durability was a primary goal. First, the

  2. Intelligent Front-end Electronics for Silicon photodetectors (IFES)

    Energy Technology Data Exchange (ETDEWEB)

    Sauerzopf, Clemens, E-mail: clemens.sauerzopf@oeaw.ac.at; Gruber, Lukas; Suzuki, Ken; Zmeskal, Johann; Widmann, Eberhard

    2016-05-21

    While high channel density can be easily achieved for big experiments using custom made microchips, providing something similar for small and medium size experiments imposes a challenge. Within this work we describe a novel and cost effective solution to operate silicon photodetectors such as silicon photo multipliers (SiPM). The IFES modules provide the bias voltage for the detectors, a leading edge discriminator featuring time over threshold and a differential amplifier, all on one printed circuit board. We demonstrate under realistic conditions that the module is usable for high resolution timing measurements exploiting both charge and time information. Furthermore we show that the modules can be easily used in larger detector arrays. All in all this confirms that the IFES modules are a viable option for a broad range of experiments if cost-effectiveness and small form factor are required.

  3. Intelligent Front-end Electronics for Silicon photodetectors (IFES)

    Science.gov (United States)

    Sauerzopf, Clemens; Gruber, Lukas; Suzuki, Ken; Zmeskal, Johann; Widmann, Eberhard

    2016-05-01

    While high channel density can be easily achieved for big experiments using custom made microchips, providing something similar for small and medium size experiments imposes a challenge. Within this work we describe a novel and cost effective solution to operate silicon photodetectors such as silicon photo multipliers (SiPM). The IFES modules provide the bias voltage for the detectors, a leading edge discriminator featuring time over threshold and a differential amplifier, all on one printed circuit board. We demonstrate under realistic conditions that the module is usable for high resolution timing measurements exploiting both charge and time information. Furthermore we show that the modules can be easily used in larger detector arrays. All in all this confirms that the IFES modules are a viable option for a broad range of experiments if cost-effectiveness and small form factor are required.

  4. Investigating reliability attributes of silicon photovoltaic cells - An overview

    Science.gov (United States)

    Royal, E. L.

    1982-01-01

    Reliability attributes are being developed on a wide variety of advanced single-crystal silicon solar cells. Two separate investigations: cell-contact integrity (metal-to-silicon adherence), and cracked cells identified with fracture-strength-reducing flaws are discussed. In the cell-contact-integrity investigation, analysis of contact pull-strength data shows that cell types made with different metallization technologies, i.e., vacuum, plated, screen-printed and soldered, have appreciably different reliability attributes. In the second investigation, fracture strength was measured using Czochralski wafers and cells taken at various stages of processing and differences were noted. Fracture strength, which is believed to be governed by flaws introduced during wafer sawing, was observed to improve (increase) after chemical polishing and other process steps that tend to remove surface and edge flaws.

  5. Present status and prospect of NTD in Korea

    International Nuclear Information System (INIS)

    Park, Sang-Jun; Kang, Ki-Doo; Kim, Myung-Seop; Jung, Hoan-Sung

    2012-01-01

    Two vertical irradiation holes in the heavy water reflector region of HANARO have been utilized for the commercial NTD (Neutron Transmutation Doping) service since 2003. Now the service is concentrated on 5 and 6 inch silicon ingots and increasingly involved in 8 inch also. In spite of fixed NTD facility in HANARO, the production has steadily increased every year due to market demand change towards higher target resistivity and continuous improvements of the management. In 2011 total 23 tons of irradiated ingot was supplied to the NTD market. Because one irradiation hole is dedicated to the irradiation for 8 inch silicon ingot and its current market occupancy rate is less than 20%, the service volume from HANARO is expected to increase up to 40 tons per year in next few years. In 2012, a national project for the construction of Korean New Research Reactor is starting. The new reactor will be sited in Ki-Jang, the south part of Korea, and plans to complete in 2016. One of the important missions of the new research reactor is to increase NTD capacity for the stable supply of NTD service. With the experiences in HANARO, the full scale study is started in order to achieve advanced neutron irradiation techniques and handling systems for the higher quality. The irradiation of larger diameter silicon more than 8 inch is included in the study for the future market demand. (author)

  6. Développement de procédés plasma pour l'élaboration et la caractérisation du silicium photovoltaïque : dépôt de couches minces épitaxiées de silicium par PECVD : mesure de la pureté du silicium à l'état solide ( 20°C) et liquide (1414°C) par LIBS

    OpenAIRE

    Benrabbah , Rafik

    2015-01-01

    Today, the main limiting factor of PV is the high price of electricity production by the PV modules. To cope with this difficulty, current researches focus on several ways and alternatives solutions: reducing energy costs including reducing the cost of the raw material, which consists in reducing the thickness of silicon wafers or in the development of cells in thin silicon layers. The latter process is intended to overcome the sawing step of silicon ingots which is necessary for the realizat...

  7. Effects of Non-equilibrium Solidification on the Material Properties of Brick Silicon for Photovoltaics

    Science.gov (United States)

    Regnault, W. F.; Yoo, K. C.; Soltani, P. K.; Johnson, S. M.

    1984-01-01

    Silicon ingot growth technologies like the Ubiquitous Crystallization Process (UCP) are solidified within a shaping crucible. The rate at which heat can be lost from this crucible minus the rate at which heat is input from an external source determines the rate at which crystallization will occur. Occasionally, when the process parameters for solidification are exceeded, the normally large multi-centimeter grain size material assocated with the UCP will break down into regions containing extremely small, millimeter or less, grain size material. Accompanying this breakdown in grain growth is the development of so called sinuous grain boundaries. The breakdown in grain growth which results in this type of small grain structure with sinuous boundaries is usually associated with the rapid crystallization that would accompany a system failure. This suggests that there are limits to the growth velocity that one can obtain and still expect to produce material that would possess good photovoltaic properties. It is the purpose to determine the causes behind the breakdown of this material and what parameters will determine the best rates of solidification.

  8. Operating experience in processing of differently sourced deeply depleted uranium oxide and production of deeply depleted uranium metal ingots

    International Nuclear Information System (INIS)

    Manna, S.; Ladola, Y.S.; Sharma, S.; Chowdhury, S.; Satpati, S.K.; Roy, S.B.

    2009-01-01

    Uranium Metal Plant (UMP) of BARC had first time experience on production of three Depleted Uranium Metal (DUM) ingots of 76kg, 152kg and 163kg during March 1991. These ingots were produced by processing depleted uranyl nitrate solution produced at Plutonium Plant (PP), Trombay. In recent past Uranium Metal Plant (UMP), Uranium Extraction Division (UED), has been assigned to produce tonnage quantity of Deeply DUM (DDUM) from its oxide obtained from PP, PREFRE and RMP, BARC. This is required for shielding the high radioactive source of BHABHATRON Tele-cobalt machine, which is used for cancer therapy. The experience obtained in processing of various DDU oxides is being utilized for design of large scale DDU-metal plant under XIth plan project. The physico- chemical characteristics like morphology, density, flowability, reactivity, particle size distribution, which are having direct effect on reactivity of the powders of the DDU oxide powder, were studied and the shop-floor operational experience in processing of different oxide powder were obtained and recorded. During campaign trials utmost care was taken to standardized all operating conditions using the same equipment which are in use for natural uranium materials processing including safety aspects both with respect to radiological safety and industrial safety. Necessary attention and close monitoring were specially arranged and maintained for the safety aspects during the trial period. In-house developed pneumatic transport system was used for powder transfer and suitable dust arresting system was used for reduction of powder carry over

  9. Evaluation of a new disposable silicon limbal relaxing incision knife by experienced users.

    Science.gov (United States)

    Albanese, John; Dugue, Geoffrey; Parvu, Valentin; Bajart, Ann M; Lee, Edwin

    2009-12-21

    Previous research has suggested that the silicon BD Atomic Edge knife has superior performance characteristics when compared to a metal knife and performance similar to diamond knife when making various incisions. This study was designed to determine whether a silicon accurate depth knife has equivalent performance characteristics when compared to a diamond limbal relaxing incision (LRI) knife and superior performance characteristics when compared to a steel accurate depth knife when creating limbal relaxing incision. Sixty-five ophthalmic surgeons with limbal relaxing incision experience created limbal relaxing incisions in ex-vivo porcine eyes with silicon and steel accurate depth knives and diamond LRI knives. The ophthalmic surgeons rated multiple performance characteristics of the knives on Visual Analog Scales. The observed differences between the silicon knife and diamond knife were found to be insignificant. The mean ratio between the performance of the silicon knife and the diamond knife was shown to be greater than 90% (with 95% confidence). The silicon knife's mean performance was significantly higher than the performance of the steel knife for all characteristics. (p-value knife was found to be equivalent in performance to the diamond LRI knife and superior to the steel accurate depth knife when making limbal relaxing incisions in ex vivo porcine eyes. Disposable silicon LRI knives may be an alternative to diamond LRI knives.

  10. Enhancement of broadband optical absorption in photovoltaic devices by band-edge effect of photonic crystals.

    Science.gov (United States)

    Tanaka, Yoshinori; Kawamoto, Yosuke; Fujita, Masayuki; Noda, Susumu

    2013-08-26

    We numerically investigate broadband optical absorption enhancement in thin, 400-nm thick microcrystalline silicon (µc-Si) photovoltaic devices by photonic crystals (PCs). We realize absorption enhancement by coupling the light from the free space to the large area resonant modes at the photonic band-edge induced by the photonic crystals. We show that multiple photonic band-edge modes can be produced by higher order modes in the vertical direction of the Si photovoltaic layer, which can enhance the absorption on multiple wavelengths. Moreover, we reveal that the photonic superlattice structure can produce more photonic band-edge modes that lead to further optical absorption. The absorption average in wavelengths of 500-1000 nm weighted to the solar spectrum (AM 1.5) increases almost twice: from 33% without photonic crystal to 58% with a 4 × 4 period superlattice photonic crystal; our result outperforms the Lambertian textured structure.

  11. Stability of edge states and edge magnetism in graphene nanoribbons

    OpenAIRE

    Kunstmann, Jens; Özdoğan, Cem; Quandt, Alexander; Fehske, Holger

    2010-01-01

    We critically discuss the stability of edge states and edge magnetism in zigzag edge graphene nanoribbons (ZGNRs). We point out that magnetic edge states might not exist in real systems, and show that there are at least three very natural mechanisms - edge reconstruction, edge passivation, and edge closure - which dramatically reduce the effect of edge states in ZGNRs or even totally eliminate them. Even if systems with magnetic edge states could be made, the intrinsic magnetism would not be ...

  12. Laser-zone Growth in a Ribbon-to-ribbon (RTR) Process Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

    Science.gov (United States)

    Baghdadi, A.; Gurtler, R. W.; Legge, R.; Sopori, B.; Rice, M. J.; Ellis, R. J.

    1979-01-01

    A technique for growing limited-length ribbons continually was demonstrated. This Rigid Edge technique can be used to recrystallize about 95% of the polyribbon feedstock. A major advantage of this method is that only a single, constant length silicon ribbon is handled throughout the entire process sequence; this may be accomplished using cassettes similar to those presently in use for processing Czochralski waters. Thus a transition from Cz to ribbon technology can be smoothly affected. The maximum size being considered, 3 inches x 24 inches, is half a square foot, and will generate 6 watts for 12% efficiency at 1 sun. Silicon dioxide has been demonstrated as an effective, practical diffusion barrier for use during the polyribbon formation.

  13. Planar edgeless silicon detectors for the TOTEM experiment

    CERN Document Server

    Ruggiero, G; Noschis, E

    2007-01-01

    Recently the first prototype of microstrip edgeless silicon detector for the TOTEM experiment has been successfully produced and tested. This detector is fabricated with standard planar technology, reach sensitivity 50 μm from the cut edge and can operate with high bias at room temperature. These almost edgeless detectors employ a newly conceived terminating structure, which, although being reduced with respect to the conventional ones, still controls the electric field at the device periphery and prevents leakage current breakdown for high bias. Detectors with the new terminating structure are being produced now and will be installed at LHC in the Roman Pots, a special beam insertion, to allow the TOTEM experiment to detect leading protons at 10 σ from the beam. This paper will describe this new terminating structure for planar silicon detectors, how it applies to big size devices and the experimental tests proving their functionality.

  14. Peculiarities of electronic structure of silicon-on-insulator structures and their interaction with synchrotron radiation

    Directory of Open Access Journals (Sweden)

    Vladimir A. Terekhov

    2015-09-01

    Full Text Available SOI (silicon-on-insulator structures with strained and unstrained silicon layers were studied by ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy with the use of synchrotron radiation techniques. Analysis of X-ray data has shown a noticeable transformation of the electron energy spectrum and local partial density of states distribution in valence and conduction bands in the strained silicon layer of the SOI structure. USXES Si L2,3 spectra analysis revealed a decrease of the distance between the L2v′ и L1v points in the valence band of the strained silicon layer as well as a shift of the first two maxima of the XANES first derivation spectra to the higher energies with respect to conduction band bottom Ec. At the same time the X-ray standing waves of synchrotron radiation (λ~12–20 nm are formed in the silicon-on-insulator structure with and without strains of the silicon layer. Moreover changing the synchrotron radiation grazing angle θ by 2° leads to a change of the electromagnetic field phase to the opposite.

  15. Slag inclusions in vacuum-melted ingots of the KhN73MBTYu nickel base alloy

    International Nuclear Information System (INIS)

    Gorin, V.A.; Kleshchev, A.S.; Kazharskaya, L.P.

    1977-01-01

    Three types of slag inclusions in ingots of the vacuum-arc-remelted nickel alloy KhN73MBTYu are considered. Type 1 inclusions are those in the surface zone; type 2 inclusions are agglomerations of nitrides and oxides formed due to the fall of lining slag; type 3 inclusions consist of agglomerations of nitrides and oxides as a result of interaction of dissolved oxygen and nitrogen with melt components. The inclusions are removed by machining of the lateral surface. It should be noted that the presence of a large amount of slag on the surface of the molten pool adversely affects the stability of the electrical regime of melting. Strict adherence to the recommendations on the melting and pouring of the initial metal reduces the pollution of the consumable electrode with nonmetallic inclusions

  16. Graphene ribbon growth on structured silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Stoehr, Alexander; Link, Stefan; Starke, Ulrich [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Baringhaus, Jens; Aprojanz, Johannes; Tegenkamp, Christoph [Institut fuer Festkoerperphysik, Leibniz Universitaet Hannover (Germany); Niu, Yuran [MAX IV Laboratory, Lund University (Sweden); present address: School of Physics and Astronomy, Cardiff University (United Kingdom); Zakharov, Alexei A. [MAX IV Laboratory, Lund University (Sweden); Chen, Chaoyu; Avila, Jose; Asensio, Maria C. [Synchrotron SOLEIL and Universite Paris-Saclay, Gif sur Yvette (France)

    2017-11-15

    Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The π-band system of the ribbons exhibits linear bands with a Dirac like shape corresponding to monolayer graphene as identified by angle-resolved photoemission spectroscopy (ARPES). (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. The effect of thermal oxidation on the luminescence properties of nanostructured silicon.

    Science.gov (United States)

    Liu, Lijia; Sham, Tsun-Kong

    2012-08-06

    Herein is reported a detailed study of the luminescence properties of nanostructured Si using X-ray excited optical luminescence (XEOL) in combination with X-ray absorption near-edge structures (XANES). P-type Si nanowires synthesized via electroless chemical etching from Si wafers of different doping levels and porous Si synthesized using electrochemical method are examined under X-ray excitation across the Si K-, L(3,2) -, and O K-edges. It is found that while as-prepared Si nanostructures are weak light emitters, intense visible luminescence is observed from thermally oxidized Si nanowires and porous Si. The luminescence mechanism of Si upon oxidation is investigated by oxidizing nanostructured Si at different temperatures. Interestingly, the two luminescence bands observed show different response with the variation of absorption coefficient upon Si and O core-electron excitation in elemental silicon and silicon oxide. A correlation between luminescence properties and electronic structures is thus established. The implications of the finding are discussed in terms of the behavior of the oxygen deficient center (OCD) and non-bridging oxygen hole center (NBOHC). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Effect of starting point formation on the crystallization of amorphous silicon films by flash lamp annealing

    Science.gov (United States)

    Sato, Daiki; Ohdaira, Keisuke

    2018-04-01

    We succeed in the crystallization of hydrogenated amorphous silicon (a-Si:H) films by flash lamp annealing (FLA) at a low fluence by intentionally creating starting points for the trigger of explosive crystallization (EC). We confirm that a partly thick a-Si part can induce the crystallization of a-Si films. A periodic wavy structure is observed on the surface of polycrystalline silicon (poly-Si) on and near the thick parts, which is a clear indication of the emergence of EC. Creating partly thick a-Si parts can thus be effective for the control of the starting point of crystallization by FLA and can realize the crystallization of a-Si with high reproducibility. We also compare the effects of creating thick parts at the center and along the edge of the substrates, and a thick part along the edge of the substrates leads to the initiation of crystallization at a lower fluence.

  19. Pulsed Laser Interactions with Silicon Nano structures in Emitter Formation

    International Nuclear Information System (INIS)

    Huat, V.L.C.; Leong, C.S.; Kamaruzzaman Sopian, Saleem Hussain Zaidi

    2015-01-01

    Silicon wafer thinning is now approaching fundamental limits for wafer thickness owing to thermal expansion mismatch between Al and Si, reduced yields in wet-chemical processing as a result of fragility, and reduced optical absorption. An alternate manufacturing approach is needed to eliminate current manufacturing issues. In recent years, pulsed lasers have become readily available and costs have been significantly reduced. Pulsed laser interactions with silicon, in terms of micromachining, diffusions, and edge isolation, are well known, and have become industrial manufacturing tools. In this paper, pulsed laser interactions with silicon nano structures were identified as the most desirable solution for the fundamental limitations discussed above. Silicon nano structures have the capability for extremely high absorption that significantly reduces requirements for laser power, as well as thermal shock to the thinner wafer. Laser-assisted crystallization, in the presence of doping materials, leads to nano structure profiles that are highly desirable for sunlight absorption. The objective of this paper is the replacement of high temperature POCl_3 diffusion by laser-assisted phosphorus layers. With these improvements, complete low-temperature processing of thinner wafers was achievable with 3.7 % efficiency. Two-dimensional laser scanning was proved to be able to form uniformly annealed surfaces with higher fill factor and open-circuit voltage. (author)

  20. X-ray absorption study of silicon carbide thin film deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Monaco, G.; Suman, M.; Garoli, D.; Pelizzo, M.G.; Nicolosi, P.

    2011-01-01

    Silicon carbide (SiC) is an important material for several applications ranging from electronics to Extreme UltraViolet (EUV) space optics. Crystalline cubic SiC (3C-SiC) has a wide band gap (near 2.4 eV) and it is a promising material to be used in high frequency and high energetic electronic devices. We have deposited, by means of pulsed laser deposition (PLD), different SiC films on sapphire and silicon substrates both at mild (650 o C) and at room temperature. The resulted films have different structures such as: highly oriented polycrystalline, polycrystalline and amorphous which have been studied by means of X-ray absorption spectroscopy (XAS) near the Si L 2,3 edge and the C K edge using PES (photoemission spectroscopy) for the analysis of the valence bands structure and film composition. The samples obtained by PLD have shown different spectra among the grown films, some of them showing typical 3C-SiC absorption structure, but also the presence of some Si-Si and graphitic bonds.

  1. The edge transient-current technique (E-TCT) with high energy hadron beam

    Energy Technology Data Exchange (ETDEWEB)

    Gorišek, Andrej; Cindro, Vladimir; Kramberger, Gregor; Mandić, Igor [J. Stefan Institute, Ljubljana (Slovenia); Mikuž, Marko [J. Stefan Institute, Ljubljana (Slovenia); University of Ljubljana (Slovenia); Muškinja, Miha; Zavrtanik, Marko [J. Stefan Institute, Ljubljana (Slovenia)

    2016-09-21

    We propose a novel way to investigate the properties of silicon and CVD diamond detectors for High Energy Physics experiments complementary to the already well-established E-TCT technique using laser beam. In the proposed setup the beam of high energy hadrons (MIPs) is used instead of laser beam. MIPs incident on the detector in the direction parallel to the readout electrode plane and perpendicular to the edge of the detector. Such experiment could prove very useful to study CVD diamond detectors that are almost inaccessible for the E-TCT measurements with laser due to large band-gap as well as to verify and complement the E-TCT measurements of silicon. The method proposed is being tested at CERN in a beam of 120 GeV hadrons using a reference telescope with track resolution at the DUT of few μm. The preliminary results of the measurements are presented.

  2. Role of edge inclination in an optical microdisk resonator for label-free sensing.

    Science.gov (United States)

    Gandolfi, Davide; Ramiro-Manzano, Fernando; Rebollo, Francisco Javier Aparicio; Ghulinyan, Mher; Pucker, Georg; Pavesi, Lorenzo

    2015-02-26

    In this paper, we report on the measurement and modeling of enhanced optical refractometric sensors based on whispering gallery modes. The devices under test are optical microresonators made of silicon nitride on silicon oxide, which differ in their sidewall inclination angle. In our approach, these microresonators are vertically coupled to a buried waveguide with the aim of creating integrated and cost-effective devices. Device modeling shows that the optimization of the device is a delicate balance of the resonance quality factor and evanescent field overlap with the surrounding environment to analyze. By numerical simulations, we show that the microdisk thickness is critical to yield a high figure of merit for the sensor and that edge inclination should be kept as high as possible. We also show that bulk-sensing figures of merit as high as 1600 RIU(-1) (refractive index unit) are feasible.

  3. Local electronic and geometric structures of silicon atoms implanted in graphite

    International Nuclear Information System (INIS)

    Baba, Yuji; Sekiguchi, Tetsuhiro; Shimoyama, Iwao

    2002-01-01

    Low-energy Si + ions were implanted in highly oriented pyrolitic graphite (HOPG) up to 1% of surface atomic concentration, and the local electronic and geometric structures around the silicon atoms were in situ investigated by means of the Si K-edge X-ray absorption near-edge structure (XANES) and X-ray photoelectron spectroscopy using linearly polarized synchrotron radiation. The resonance peak appeared at 1839.5 eV in the Si K-edge XANES spectra for Si + -implanted HOPG. This energy is lower than those of the Si 1s→σ * resonance peaks in any other Si-containing materials. The intensity of the resonance peak showed strong polarization dependence, which suggests that the final state orbitals around the implanted Si atoms have π * -like character. It is concluded that the σ-type Si-C bonds produced by the Si + -ion implantation are nearly parallel to the graphite plane, and Si x C phase forms two-dimensionally spread graphite-like layer with sp 2 bonds

  4. Towards nanometer-spaced silicon contacts to proteins

    Science.gov (United States)

    Schukfeh, Muhammed I.; Sepunaru, Lior; Behr, Pascal; Li, Wenjie; Pecht, Israel; Sheves, Mordechai; Cahen, David; Tornow, Marc

    2016-03-01

    A vertical nanogap device (VND) structure comprising all-silicon contacts as electrodes for the investigation of electronic transport processes in bioelectronic systems is reported. Devices were fabricated from silicon-on-insulator substrates whose buried oxide (SiO2) layer of a few nanometers in thickness is embedded within two highly doped single crystalline silicon layers. Individual VNDs were fabricated by standard photolithography and a combination of anisotropic and selective wet etching techniques, resulting in p+ silicon contacts, vertically separated by 4 or 8 nm, depending on the chosen buried oxide thickness. The buried oxide was selectively recess-etched with buffered hydrofluoric acid, exposing a nanogap. For verification of the devices’ electrical functionality, gold nanoparticles were successfully trapped onto the nanogap electrodes’ edges using AC dielectrophoresis. Subsequently, the suitability of the VND structures for transport measurements on proteins was investigated by functionalizing the devices with cytochrome c protein from solution, thereby providing non-destructive, permanent semiconducting contacts to the proteins. Current-voltage measurements performed after protein deposition exhibited an increase in the junctions’ conductance of up to several orders of magnitude relative to that measured prior to cytochrome c immobilization. This increase in conductance was lost upon heating the functionalized device to above the protein’s denaturation temperature (80 °C). Thus, the VND junctions allow conductance measurements which reflect the averaged electronic transport through a large number of protein molecules, contacted in parallel with permanent contacts and, for the first time, in a symmetrical Si-protein-Si configuration.

  5. Towards nanometer-spaced silicon contacts to proteins

    International Nuclear Information System (INIS)

    Schukfeh, Muhammed I; Behr, Pascal; Tornow, Marc; Sepunaru, Lior; Li, Wenjie; Pecht, Israel; Sheves, Mordechai; Cahen, David

    2016-01-01

    A vertical nanogap device (VND) structure comprising all-silicon contacts as electrodes for the investigation of electronic transport processes in bioelectronic systems is reported. Devices were fabricated from silicon-on-insulator substrates whose buried oxide (SiO_2) layer of a few nanometers in thickness is embedded within two highly doped single crystalline silicon layers. Individual VNDs were fabricated by standard photolithography and a combination of anisotropic and selective wet etching techniques, resulting in p"+ silicon contacts, vertically separated by 4 or 8 nm, depending on the chosen buried oxide thickness. The buried oxide was selectively recess-etched with buffered hydrofluoric acid, exposing a nanogap. For verification of the devices’ electrical functionality, gold nanoparticles were successfully trapped onto the nanogap electrodes’ edges using AC dielectrophoresis. Subsequently, the suitability of the VND structures for transport measurements on proteins was investigated by functionalizing the devices with cytochrome c protein from solution, thereby providing non-destructive, permanent semiconducting contacts to the proteins. Current–voltage measurements performed after protein deposition exhibited an increase in the junctions’ conductance of up to several orders of magnitude relative to that measured prior to cytochrome c immobilization. This increase in conductance was lost upon heating the functionalized device to above the protein’s denaturation temperature (80 °C). Thus, the VND junctions allow conductance measurements which reflect the averaged electronic transport through a large number of protein molecules, contacted in parallel with permanent contacts and, for the first time, in a symmetrical Si–protein–Si configuration. (paper)

  6. Technology challenges for ultrasmall silicon MOSFET's

    International Nuclear Information System (INIS)

    Dennard, R.H.

    1981-01-01

    Work on silicon MOSFET devices scaled down to half-micron dimensions is gathering momentum in research labs for VLSI applications. Further reductions in device geometries by only a factor of two will bring us to the edge of some fundamental barriers to miniaturization. Design requirements for very thin layers in the device structure lead to resistance effects, statistical fluctuation of doping impurities, and increased concern for interface properties. Scaling down of applied voltage is difficult because built-in junction potentials and other small voltage terms are no longer negligible. Increased susceptibility to spurious operation or permanent damage from alpha particles, cosmic particles, or other high-energy radiation is reviewed

  7. Thermal Oxidation of Structured Silicon Dioxide

    DEFF Research Database (Denmark)

    Christiansen, Thomas Lehrmann; Hansen, Ole; Jensen, Jørgen Arendt

    2014-01-01

    The topography of thermally oxidized, structured silicon dioxide is investigated through simulations, atomic force microscopy, and a proposed analytical model. A 357 nm thick oxide is structured by removing regions of the oxide in a masked etch with either reactive ion etching or hydrofluoric acid....... Subsequent thermal oxidation is performed in both dry and wet ambients in the temperature range 950◦C to 1100◦C growing a 205 ± 12 nm thick oxide in the etched mask windows. Lifting of the original oxide near the edge of the mask in the range 6 nm to 37 nm is seen with increased lifting for increasing...

  8. Large-area graphene films by simple solution casting of edge-selectively functionalized graphite.

    Science.gov (United States)

    Bae, Seo-Yoon; Jeon, In-Yup; Yang, Jieun; Park, Noejung; Shin, Hyeon Suk; Park, Sungjin; Ruoff, Rodney S; Dai, Liming; Baek, Jong-Beom

    2011-06-28

    We report edge-selective functionalization of graphite (EFG) for the production of large-area uniform graphene films by simply solution-casting EFG dispersions in dichloromethane on silicon oxide substrates, followed by annealing. The resultant graphene films show ambipolar transport properties with sheet resistances of 0.52-3.11 kΩ/sq at 63-90% optical transmittance. EFG allows solution processing methods for the scalable production of electrically conductive, optically transparent, and mechanically robust flexible graphene films for use in practice.

  9. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  10. Obtention of uranium-molybdenum alloy ingots technique to avoid carbon contamination

    Energy Technology Data Exchange (ETDEWEB)

    Pedrosa, Tercio A.; Paula, Joao Bosco de; Reis, Sergio C.; Brina, Jose Giovanni M.; Faeda, Kelly Cristina M.; Ferraz, Wilmar B., E-mail: tap@cdtn.b, E-mail: jbp@cdtn.b, E-mail: jgmb@cdtn.b, E-mail: ferrazw@cdtn.b [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

    2011-07-01

    The replacement of high enriched uranium (U{sup 235} > 85 wt%) by low enriched uranium (U{sup 235} < 20wt%) nuclear fuels in research and test reactors is being implemented as an initiative of the Reduced Enrichment for Research and Test Reactors (RERTR) program, conceived in the USA since mid-70s, in order to avoid nuclear weapons proliferation. Such replacement implies in the use of compounds or alloys with higher uranium densities. Among the several uranium alloys investigated since then, U-Mo presents great application potential due to its physical properties and good behavior during irradiation, which makes it an important option as a nuclear fuel material for the Brazilian Multipurpose Reactor - RMB. The development of the plate-type nuclear fuel based on U-Mo alloy is being performed at the Nuclear Technology Development Centre (CDTN) and also at IPEN. The carbon contamination of the alloy is one of the great concerns during the melting process. It was observed that U-Mo alloy is more critical considering carbon contamination when using graphite crucibles. Alternative melting technique was implemented at CDTN in order to avoid carbon contamination from graphite crucible using Yttria stabilized ZrO{sub 2} crucibles. Ingots with low carbon content and good internal quality were obtained. (author)

  11. Interactions of structural defects with metallic impurities in multicrystalline silicon

    International Nuclear Information System (INIS)

    McHugo, S.A.; Thompson, A.C.; Hieslmair, H.

    1997-01-01

    Multicrystalline silicon is one of the most promising materials for terrestrial solar cells. It is critical to getter impurities from the material as well as inhibit contamination during growth and processing. Standard processing steps such as, phosphorus in-diffusion for p-n junction formation and aluminum sintering for backside ohmic contact fabrication, intrinsically possess gettering capabilities. These processes have been shown to improve L n values in regions of multicrystalline silicon with low structural defect densities but not in highly dislocated regions. Recent Deep Level Transient Spectroscopy (DLTS) results indirectly reveal higher concentrations of iron in highly dislocated regions while further work suggests that the release of impurities from structural defects, such as dislocations, is the rate limiting step for gettering in multicrystalline silicon. The work presented here directly demonstrates the relationship between metal impurities, structural defects and solar cell performance in multicrystalline silicon. Edge-defined Film-fed Growth (EFG) multicrystalline silicon in the as-grown state and after full solar cell processing was used in this study. Standard solar cell processing steps were carried out at ASE Americas Inc. Metal impurity concentrations and distributions were determined by use of the x-ray fluorescence microprobe (beamline 10.3.1) at the Advanced Light Source, Lawrence Berkeley National Laboratory. The sample was at atmosphere so only elements with Z greater than silicon could be detected, which includes all metal impurities of interest. Structural defect densities were determined by preferential etching and surface analysis using a Scanning Electron Microscope (SEM) in secondary electron mode. Mapped areas were exactly relocated between the XRF and SEM to allow for direct comparison of impurity and structural defect distributions

  12. Analysis of single-photon time resolution of FBK silicon photomultipliers

    International Nuclear Information System (INIS)

    Acerbi, Fabio; Ferri, Alessandro; Gola, Alberto; Zorzi, Nicola; Piemonte, Claudio

    2015-01-01

    We characterized and analyzed an important feature of silicon photomultipliers: the single-photon time resolution (SPTR). We characterized the SPTR of new RGB (Red–Green–Blue) type Silicon Photomultipliers and SPADs produced at FBK (Trento, Italy), studying its main limiting factors. We compared time resolution of 1×1 mm 2 and 3×3 mm 2 SiPMs and a single SiPM cell (i.e. a SPAD with integrated passive-quenching), employing a mode-locked pulsed laser with 2-ps wide pulses. We estimated the contribution of front-end electronic-noise, of cell-to-cell uniformity, and intrinsic cell time-resolution. At a single-cell level, we compared the results obtained with different layouts. With a circular cell with a top metallization covering part of the edge and enhancing the signal extraction, we reached ~20 ps FWHM of time resolution

  13. The effects of thermal annealing in structural and optical properties of RF sputtered amorphous silicon

    International Nuclear Information System (INIS)

    Abdul Fatah Awang Mat

    1988-01-01

    The effect of thermal annealing on structural and optical properties of amorphous silicon are studied on samples prepared by radio-frequency sputtering. The fundamental absorption edge of these films are investigated at room temperature and their respective parameters estimated. Annealing effect on optical properties is interpreted in terms of the removal of voids and a decrease of disorder. (author)

  14. Measurement of the ratio of liquid to solid phases in a continuous ingot

    International Nuclear Information System (INIS)

    Deryabina, G.N.; Ripp, A.G.

    1980-01-01

    A radiometric method of measuring the ratio of liquid and solid phases (crust thickness) in a continuous ingot for automation of the continuous steel casting process, has been proposed. The essence of the method is, that radiation flux, bearing information on the object tested, is transformed in a succession of electric pulses, which is processed afterwords for obtaining necessary information. In this case either the flux of non-scattered radiation, passed through the object, or the flux of single-scattered radiation reflected from the object is registered. Block-diagram and specifications of a radiometric device with the Co source of 50 gxequiv. Ra activity developed for this purpose are presented. The technique for calibration ob the device and the results of its tests, are described. It is shown, that introduction of such devices for the control crust thickness at the installations of continuous steel casting of metallurgical works would permit to exercise casting in the optimum regime, to exclude metal leakage, to increase its quality and yield of the useful metal

  15. Effects of quantum statistics of phonons on the thermal conductivity of silicon and germanium nanoribbons

    Science.gov (United States)

    Kosevich, Yuriy A.; Savin, Alexander V.; Cantarero, Andrés

    2013-01-01

    We present molecular dynamics simulation of phonon thermal conductivity of semiconductor nanoribbons with an account for phonon quantum statistics. In our semiquantum molecular dynamics simulation, dynamics of the system is described with the use of classical Newtonian equations of motion where the effect of phonon quantum statistics is introduced through random Langevin-like forces with a specific power spectral density (color noise). The color noise describes interaction of the molecular system with the thermostat. The thermal transport of silicon and germanium nanoribbons with atomically smooth (perfect) and rough (porous) edges are studied. We show that the existence of rough (porous) edges and the quantum statistics of phonon change drastically the low-temperature thermal conductivity of the nanoribbon in comparison with that of the perfect nanoribbon with atomically smooth edges and classical phonon dynamics and statistics. The rough-edge phonon scattering and weak anharmonicity of the considered lattice produce a weakly pronounced maximum of thermal conductivity of the nanoribbon at low temperature.

  16. Measurement of mass attenuation coefficients around the K absorption edge by parametric X-rays

    International Nuclear Information System (INIS)

    Tamura, Masaya; Akimoto, Tadashi; Aoki, Yohei; Ikeda, Jiro; Sato, Koichi; Fujita, Fumiyuki; Homma, Akira; Sawamura, Teruko; Narita, Masakuni

    2002-01-01

    When electrons at relativistic velocities pass through a crystal plate, such as silicon, photons are emitted around the Bragg angle for X-ray diffraction. This phenomenon is called parametric X-ray radiation (PXR). The monochromaticity and directivity of PXR are adequate and the energy can be changed continuously by rotating the crystal. This study measured the mass attenuation coefficient around the K-shell absorption edge of Nb, Zr and Mo as a PXR application of monochromatic hard X-ray radiation sources

  17. Measurement of mass attenuation coefficients around the K absorption edge by parametric X-rays

    CERN Document Server

    Tamura, M; Aoki, Y; Ikeda, J; Sato, K; Fujita, F; Homma, A; Sawamura, T; Narita, M

    2002-01-01

    When electrons at relativistic velocities pass through a crystal plate, such as silicon, photons are emitted around the Bragg angle for X-ray diffraction. This phenomenon is called parametric X-ray radiation (PXR). The monochromaticity and directivity of PXR are adequate and the energy can be changed continuously by rotating the crystal. This study measured the mass attenuation coefficient around the K-shell absorption edge of Nb, Zr and Mo as a PXR application of monochromatic hard X-ray radiation sources.

  18. Silicon coating treatment to improve high temperature corrosion resistance of 9%Cr steels

    International Nuclear Information System (INIS)

    Hill, M.P.

    1989-01-01

    A silicon coating process is described which confers good protection on 9%Cr steels and alloys in CO 2 based atmospheres at high temperatures and pressures. The coatings are formed by decomposition of silane at temperatures above 720 K. Protective layers are typically up to 1 μm thick. The optimum coating conditions are discussed. The chemical state of the coatings has been investigated by X-ray photoelectron spectroscopy and has demonstrated the importance of avoiding silicon oxide formation during processing. Corrosion testing has been carried out for extended periods, up to 20 000 h, at temperatures between 753 and 853 K, in a simulated advanced gas cooled reactor gas at 4 MPa pressure. Benefit factors of up to 60 times have been measured for 9%Cr steels. Even higher values have been measured for 9Cr-Fe binary alloy on which a 1 μm coating was sufficient to eliminate significant oxidation over 19 000 h except at the specimen edges. The mechanism of protection is discussed. It is suggested that a silicon surface coating for protecting steels from high temperature corrosion has some advantages over adding silicon to the bulk metal. (author)

  19. Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabrication

    Science.gov (United States)

    Zhao, Yiping; Jansen, Henri; de Boer, Meint; Berenschot, Erwin; Bouwes, Dominique; Gironès, Miriam; Huskens, Jurriaan; Tas, Niels

    2010-09-01

    Edge lithography in combination with fluorine-based plasma etching is employed to avoid the dependence on crystal orientation in single crystal silicon to create monolithic nanoridges with arbitrary contours. This is demonstrated by using a mask with circular structures and Si etching at cryogenic temperature with SF6+O2 plasma mixtures. Initially, the explored etch recipe was used with Cr as the masking material. Although nanoridges with perfect vertical sidewalls have been achieved, Cr causes severe sidewall roughness due to line edge roughness. Therefore, an SU-8 polymer is used instead. Although the SU-8 pattern definition needs further improvement, we demonstrate the possibility of fabricating Si nanoridges of arbitrary contours providing a width below 50 nm and a height between 25 and 500 nm with smooth surface finish. Artifacts in the ridge profile are observed and are mainly caused by the bird's beak phenomenon which is characteristic for the used LOCOS process.

  20. Ductile-regime turning of germanium and silicon

    Science.gov (United States)

    Blake, Peter N.; Scattergood, Ronald O.

    1989-01-01

    Single-point diamond turning of silicon and germanium was investigated in order to clarify the role of cutting depth in coaxing a ductile chip formation in normally brittle substances. Experiments based on the rapid withdrawal of the tool from the workpiece have shown that microfracture damage is a function of the effective depth of cut (as opposed to the nominal cutting depth). In essence, damage created by the leading edge of the tool is removed several revolutions later by lower sections of the tool edge, where the effective cutting depth is less. It appears that a truly ductile cutting response can be achieved only when the effective cutting depth, or critical chip thickness, is less than about 20 nm. Factors such as tool rake angle are significant in that they will affect the actual value of the critical chip thickness for transition from brittle to ductile response. It is concluded that the critical chip thickness is an excellent parameter for measuring the effects of machining conditions on the ductility of the cut and for designing tool-workpiece geometry in both turning and grinding.

  1. Silicon sensor technologies for ATLAS IBL upgrade

    CERN Document Server

    Grenier, P; The ATLAS collaboration

    2011-01-01

    New pixel sensors are currently under development for ATLAS Upgrades. The first upgrade stage will consist in the construction of a new pixel layer that will be installed in the detector during the 2013 LHC shutdown. The new layer (Insertable-B-Layer, IBL) will be inserted between the inner most layer of the current pixel detector and the beam pipe at a radius of 3.2cm. The expected high radiation levels require the use of radiation hard technology for both the front-end chip and the sensor. Two different pixel sensor technologies are envisaged for the IBL. The sensor choice will occur in July 2011. One option is developed by the ATLAS Planar Pixel Sensor (PPS) Collaboration and is based on classical n-in-n planar silicon sensors which have been used for the ATLAS Pixel detector. For the IBL, two changes were required: The thickness was reduced from 250 um to 200 um to improve the radiation hardness. In addition, so-called "slim edges" were designed to reduce the inactive edge of the sensors from 1100 um to o...

  2. SiC/SiC Leading Edge Turbine Airfoil Tested Under Simulated Gas Turbine Conditions

    Science.gov (United States)

    Robinson, R. Craig; Hatton, Kenneth S.

    1999-01-01

    Silicon-based ceramics have been proposed as component materials for use in gas turbine engine hot-sections. A high pressure burner rig was used to expose both a baseline metal airfoil and ceramic matrix composite leading edge airfoil to typical gas turbine conditions to comparatively evaluate the material response at high temperatures. To eliminate many of the concerns related to an entirely ceramic, rotating airfoil, this study has focused on equipping a stationary metal airfoil with a ceramic leading edge insert to demonstrate the feasibility and benefits of such a configuration. Here, the idea was to allow the SiC/SiC composite to be integrated as the airfoil's leading edge, operating in a "free-floating" or unrestrained manner. and provide temperature relief to the metal blade underneath. The test included cycling the airfoils between simulated idle, lift, and cruise flight conditions. In addition, the airfoils were air-cooled, uniquely instrumented, and exposed to the same internal and external conditions, which included gas temperatures in excess of 1370 C (2500 F). Results show the leading edge insert remained structurally intact after 200 simulated flight cycles with only a slightly oxidized surface. The instrumentation clearly suggested a significant reduction (approximately 600 F) in internal metal temperatures as a result of the ceramic leading edge. The object of this testing was to validate the design and analysis done by Materials Research and Design of Rosemont, PA and to determine the feasibility of this design for the intended application.

  3. Analysis of single-photon time resolution of FBK silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Acerbi, Fabio, E-mail: acerbi@fbk.eu; Ferri, Alessandro; Gola, Alberto; Zorzi, Nicola; Piemonte, Claudio

    2015-07-01

    We characterized and analyzed an important feature of silicon photomultipliers: the single-photon time resolution (SPTR). We characterized the SPTR of new RGB (Red–Green–Blue) type Silicon Photomultipliers and SPADs produced at FBK (Trento, Italy), studying its main limiting factors. We compared time resolution of 1×1 mm{sup 2} and 3×3 mm{sup 2} SiPMs and a single SiPM cell (i.e. a SPAD with integrated passive-quenching), employing a mode-locked pulsed laser with 2-ps wide pulses. We estimated the contribution of front-end electronic-noise, of cell-to-cell uniformity, and intrinsic cell time-resolution. At a single-cell level, we compared the results obtained with different layouts. With a circular cell with a top metallization covering part of the edge and enhancing the signal extraction, we reached ~20 ps FWHM of time resolution.

  4. Laser-assisted turning of components made of silicon-nitride ceramics

    International Nuclear Information System (INIS)

    Klocke, F.; Bausch, S.

    2001-01-01

    The manufacture of high-precision parts made of silicon-nitride ceramic, such as roller bearing rings or valves, currently involves finishing in the form of time and cost intensive grinding operations. This has resulted in demands for the development of more efficient machining techniques and for the subsequent provision of these within a manufacturing environment. A prototype of a precision lathe with an integrated high power diode laser for laser-assisted turning has been developed at the Fraunhofer IPT in close co-operation with industrial partners. When the workpiece is heated continuously by the laser, the resultant localized material softening enables the ceramic to be machined using a defined cutting edge. The application of this technique allows complex silicon nitride ceramic parts with surface qualities of up to R a = 0.3 μm to be produced considerably more flexibly than before, with no requirement for cooling lubricant. (author)

  5. Annealing effects on recombinative activity of nickel at direct silicon bonded interface

    International Nuclear Information System (INIS)

    Kojima, Takuto; Ohshita, Yoshio; Yamaguchi, Masafumi

    2015-01-01

    By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi 2

  6. Composite polymer/glass edge claddings for new Nova laser disks

    International Nuclear Information System (INIS)

    Powell, H.T.; Campbell, J.H.; Edwards, G.

    1987-01-01

    Large Nd:glass laser disks like those used in Nova require an edge cladding which absorbs at 1 μm. This cladding prevents Fresnel reflections from the edges from causing parasitic oscillations which would otherwise reduce the gain. The original Nova disks had a Cu/sup 2+/-doped phosphate glass cladding which was cast at high temperature around the circumference of the disk. Although the performance of this cladding is excellent, it was expensive to produce. Consequently, in parallel with their efforts to develop Pt inclusion-free laser glass, the authors developed a composite polymer/glass edge cladding that can be applied at greatly reduced cost. Laser disks constructed with the new cladding design show identical performance to the previous Nova disks and have been tested for hundreds of shots without degradation. The new cladding consists of absorbing glass strips which are bonded to the edges of polygonal-rather that elliptical-shaped disks. The bond is made by an --25-μm thick clear epoxy adhesive whose index of refraction matches both the laser and absorbing glass. By blending aromatic and aliphatic epoxy constituents, they achieved an index-of-refraction match within approximately +-0.003 between the epoxy and glass. The epoxy was also chosen based on its damage resistance to flashlamp light and its adhesive strength to glass. The present cladding is a major improvement over a previous experimental cladding utilizing silicone rubber as a coupling agent. Early prototypes constructed without using the presented techniques exhibited failures from both mechanisms. Delamination failures occurred which clearly showed both surface and bulk-mode parasitic oscillation. Requirements on the polymer, disk size, and Nd doping to prevent these problems are presented

  7. Investigation of silicon/silicon germanium multiple quantum well layers in silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Loudon, A.Y.

    2002-01-01

    Silicon single photon avalanche diodes (SPADs) are currently utilised in many single photon counting systems due to their high efficiency, fast response times, low voltage operation and potentially low cost. For fibre based applications however (at wavelengths 1.3 and 1.55μm) and eye-safe wavelength applications (>1.4μm), Si devices are not suitable due to their 1.1μm absorption edge and hence greatly reduced absorption above this wavelength. InGaAs/InP or Ge SPADs absorb at these longer wavelengths, but both require cryogenic cooling for low noise operation and III-V integration with conventional Si circuitry is difficult. Si/SiGe is currently attracting great interest for optoelectronic applications and attempts to combine Si avalanche photodiodes with Si/SiGe multiple quantum well absorbing layers have been successful. Here, an effort to utilise this material system has shown an improvement in photon counting efficiency above 1.1μm of more than 30 times compared to an all-Si control device. In addition to its longer wavelength response, this Si/SiGe device has room temperature operation, low cost fabrication and is compatible with conventional Si circuitry. (author)

  8. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  9. Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

    Science.gov (United States)

    Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

    2018-03-01

    Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

  10. Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells

    International Nuclear Information System (INIS)

    Arafune, K.; Sasaki, T.; Wakabayashi, F.; Terada, Y.; Ohshita, Y.; Yamaguchi, M.

    2006-01-01

    We focused on the defects and impurities in polycrystalline silicon substrates, which deteriorate solar cell efficiency. Comparison of the minority carrier lifetime with the grain size showed that the region with short minority carrier lifetimes did not correspond to the region with small grains. Conversely, the minority carrier lifetime decreased as the etch-pit density (EPD) increased, suggesting that the minority carrier lifetime is strongly affected by the EPD. Electron beam induced current measurements revealed that a combination of grain boundaries and point defects had high recombination activity. Regarding impurities, the interstitial oxygen concentration was relatively low compared with that in a Czochralski-grown silicon substrate, the total carbon concentration exceeded the solubility limit of silicon melt. X-ray microprobe fluorescence measurements revealed a large amount of iron in the regions where there were many etch-pits and grain boundaries with etch-pits. X-ray absorption near edge spectrum analysis revealed trapped iron in the form of oxidized iron

  11. Transaortic Alfieri Edge-to-Edge Repair for Functional Mitral Regurgitation.

    Science.gov (United States)

    Imasaka, Ken-Ichi; Tayama, Eiki; Morita, Shigeki; Toriya, Ryohei; Tomita, Yukihiro

    2018-03-01

    There is controversy about handling functional mitral regurgitation in patients undergoing aortic valve or proximal aortic operations. We describe a transaortic Alfieri edge-to-edge repair for functional mitral regurgitation that reduces operative excessive invasion and prolonged cardiopulmonary bypass time. Between May 2013 and December 2016, 10 patients underwent transaortic Alfieri edge-to-edge mitral repair. There were no operative deaths. The severity of mitral regurgitation immediately after the operation by transesophageal echocardiography was none or trivial in all patients. A transaortic Alfieri edge-to-edge repair for functional mitral regurgitation is a simple and safe approach. Copyright © 2018 The Society of Thoracic Surgeons. Published by Elsevier Inc. All rights reserved.

  12. Improving the opto-microwave performance of SiGe/Si phototransistor through edge-illuminated structure

    Science.gov (United States)

    Tegegne, Z. G.; Viana, C.; Polleux, J. L.; Grzeskowiak, M.; Richalot, E.

    2016-03-01

    This paper demonstrates the experimental study of edge and top illuminated SiGe phototransistors (HPT) implemented using the existing industrial SiGe2RF Telefunken GmbH BiCMOS technology for opto-microwave (OM) applications using 850nm Multi-Mode Fibers (MMF). Its technology and structure are described. Two different optical window size HPTs with top illumination (5x5μm2, 10x10μm2) and an edge illuminated HPTs having 5μm x5μm size are presented and compared. A two-step post fabrication process was used to create an optical access on the edge of the HPT for lateral illumination with a lensed MMF through simple polishing and dicing techniques. We perform Opto-microwave Scanning Near-field Optical Microscopy (OM-SNOM) analysis on edge and top illuminated HPTs in order to observe the fastest and the highest sensitive regions of the HPTs. This analysis also allows understanding the parasitic effect from the substrate, and thus draws a conclusion on the design aspect of SiGe/Si HPT. A low frequency OM responsivity of 0.45A/W and a cutoff frequency, f-3dB, of 890MHz were measured for edge illuminated HPT. Compared to the top illuminated HPT of the same size, the edge illuminated HPT improves the f-3dB by a factor of more than two and also improves the low frequency responsivity by a factor of more than four. These results demonstrate that a simple etched HPT is still enough to achieve performance improvements compared to the top illuminated HPT without requiring a complex coupling structure. Indeed, it also proves the potential of edge coupled SiGe HPT in the ultra-low-cost silicon based optoelectronics circuits with a new approach of the optical packaging and system integration to 850nm MMF.

  13. Pixel Sensors with slim edges and small pitches for the CMS upgrades for HL-LHC

    CERN Document Server

    AUTHOR|(CDS)2084134; Bolla, Gino; Rivera, Ryan Allen; Uplegger, Lorenzo; Zoi, Irene

    2016-01-01

    Planar n-in-n silicon detectors with small pitches and slim edges are being investigated for the innermost layers of tracking devices for the foreseen upgrades of the LHC. Sensor prototypes compatible with the CMS readout, fabricated by Sintef, were tested in the laboratory and with a 120~GeV/c proton beam at the Fermilab test beam facility before and after irradiation with up to 2x10$^{15}$ n$_{eq}/$cm$^2$ fluence. Preliminary results of the data analysis are presented.

  14. 3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

    Energy Technology Data Exchange (ETDEWEB)

    Da Vià, Cinzia; Boscardil, Maurizio; Dalla Betta, GianFranco; Darbo, Giovanni; Fleta, Celeste; Gemme, Claudia; Giacomini, Gabriele; Grenier, Philippe; Grinstein, Sebastian; Hansen, Thor-Erik; Hasi, Jasmine; Kenney, Christopher; Kok, Angela; La Rosa, Alessandro; Micelli, Andrea; Parker, Sherwood; Pellegrini, Giulio; Pohl, David-Leon; Povoli, Marco; Vianello, Elisa; Zorzi, Nicola; Watts, S. J.

    2013-01-01

    3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

  15. 3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

    Energy Technology Data Exchange (ETDEWEB)

    Da Vià, Cinzia, E-mail: cinzia.da.via@cern.ch [School of Physics and Astronomy, The University of Manchester, Oxford Road, M13 9PL Manchester (United Kingdom); Boscardil, Maurizio [Fondazione Bruno Kessler, FBK-CMM, Via Sommarive 18, I-38123 Trento (Italy); Dalla Betta, GianFranco [DISI, Università degli Studi di Trento and INFN, Via Sommarive 14, I-38123 Trento (Italy); Darbo, Giovanni [INFN Sezione di Genova, Via Dodecaneso 33, I-14146 Genova (Italy); Fleta, Celeste [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona E-08193 (Spain); Gemme, Claudia [INFN Sezione di Genova, Via Dodecaneso 33, I-14146 Genova (Italy); Giacomini, Gabriele [Fondazione Bruno Kessler, FBK-CMM, Via Sommarive 18, I-38123 Trento (Italy); Grenier, Philippe [SLAC National Accelerator Laboratory, 2575 Sand Hill Rd, Menlo Park, CA 94025 (United States); Grinstein, Sebastian [Institut de Fisica d' Altes Energies (IFAE) and ICREA, Universitat Autonoma de Barcelona (UAB) E-08193, Bellaterra, Barcelona (Spain); Hansen, Thor-Erik [SINTEF MiNaLab, Blindern, N-0314 Oslo (Norway); Hasi, Jasmine; Kenney, Christopher [SLAC National Accelerator Laboratory, 2575 Sand Hill Rd, Menlo Park, CA 94025 (United States); Kok, Angela [SINTEF MiNaLab, Blindern, N-0314 Oslo (Norway); La Rosa, Alessandro [CERN CH 1211, Geneva 23 (Switzerland); Micelli, Andrea [Tne University of Udine and INFN, via del Cotonificio 108, 33100 Udine (Italy); Parker, Sherwood [University of Hawaii, c/o Lawrence Berkeley Laboratory, Berkeley, CA 94720 (United States); Pellegrini, Giulio [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona E-08193 (Spain); Pohl, David-Leon [Physikalisches Institut der Universität Bonn, Nußallee 12 D-53115, Bonn, Federal Republic of Germany (Germany); Povoli, Marco [DISI, Università degli Studi di Trento and INFN, Via Sommarive 14, I-38123 Trento (Italy); and others

    2013-01-21

    3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

  16. Dark noise rates in irradiated silicon photomultiplier arrays

    Energy Technology Data Exchange (ETDEWEB)

    Bachmann, Sebastian; Comerma, Albert; Gerick, David; Han, Xiaoxue; Hansmann-Menzemer, Stephanie; Kecke, Matthieu; Leverington, Blake; Mazorra de Cos, Jose; Mitzel, Dominik; Neuner, Max; Uwer, Ulrich [Physikalisches Institut, Universitaet Heidelberg (Germany); Collaboration: LHCb-Collaboration

    2016-07-01

    The planned downstream tracking system - the Scintillating Fibre Tracker - for the LHCb upgrade uses silicon photomultiplier (SiPM) arrays of 128 channels to read out mats made of 250 μm diameter scintillating fibres. In the LHCb environment the neutron flux degrades the silicon detectors to the edge of an acceptable performance in terms of DCR. Studies have shown that the dark count rate (DCR) of the SiPMs increases linearly with the neutron flux. Towards the end of the designed lifetime of the experiment the DCR per SiPM channel operated at T = -40 C is expected to reach a few MHz after partial annealing. To reduce the impact of the DCR - while at the same time provide efficient hit reconstruction - a clustering algorithm is developed to separate signal from noise. A brief introduction into the custom designed read-out ASIC and the cluster algorithm are presented along with the studies of the dark count cluster rate dependency on the neutron flux, the DCR per channel and the effects of the applied signal thresholds for the clustering algorithm.

  17. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters

    International Nuclear Information System (INIS)

    Gutierrez, M. T.; Gandia, J. J.; Carabe, J.

    1999-01-01

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p- and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)23 refs

  18. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  19. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

    2015-01-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  20. Edge-functionalization of armchair graphene nanoribbons with pentagonal-hexagonal edge structures.

    Science.gov (United States)

    Ryou, Junga; Park, Jinwoo; Kim, Gunn; Hong, Suklyun

    2017-06-21

    Using density functional theory calculations, we have studied the edge-functionalization of armchair graphene nanoribbons (AGNRs) with pentagonal-hexagonal edge structures. While the AGNRs with pentagonal-hexagonal edge structures (labeled (5,6)-AGNRs) are metallic, the edge-functionalized (5,6)-AGNRs with substitutional atoms opens a band gap. We find that the band structures of edge-functionalized (5,6)-N-AGNRs by substitution resemble those of defect-free (N-1)-AGNR at the Γ point, whereas those at the X point show the original ones of the defect-free N-AGNR. The overall electronic structures of edge-functionalized (5,6)-AGNRs depend on the number of electrons, supplied by substitutional atoms, at the edges of functionalized (5,6)-AGNRs.

  1. Nanostructure Size Determination in N+-Type Porous Silicon by X-Ray diffractometry and Raman Spectroscopy

    International Nuclear Information System (INIS)

    Ramirez Porras, A.

    1997-01-01

    A series of porous silicon surfaces were obtained after different exposition times of electrochemical etching on cristalline n+- type silicon in presence of hydrofluoric acid. These kind of surfaces show photoluminescence when illuminated by UV light. One possible explanation for this is that the treated surface is made up of small crystallites the nanometer scale that split away the semiconductor band edges up to optical photon energies for the band- to -band recombination processes. In this study, a nanometer size determination of such proposed structures was performed by the use of X-Ray Diffractometry and Raman Spectroscopy. The result suggest the consistency between the so called Quantum Confined Model and the experimental results. (Author) [es

  2. Nanostructure Size Determination in N+-Type Porous Silicon by X-Ray diffractometry and Raman Spectroscopy

    CERN Document Server

    Ramirez-Porras, A

    1997-01-01

    A series of porous silicon surfaces were obtained after different exposition times of electrochemical etching on cristalline n+- type silicon in presence of hydrofluoric acid. These kind of surfaces show photoluminescence when illuminated by UV light. One possible explanation for this is that the treated surface is made up of small crystallites the nanometer scale that split away the semiconductor band edges up to optical photon energies for the band- to -band recombination processes. In this study, a nanometer size determination of such proposed structures was performed by the use of X-Ray Diffractometry and Raman Spectroscopy. The result suggest the consistency between the so called Quantum Confined Model and the experimental results. (Author)

  3. Edge passivation induced single-edge ferromagnetism of zigzag MoS_2 nanoribbons

    International Nuclear Information System (INIS)

    Wang, Rui; Sun, Hui; Ma, Ben; Hu, Jingguo; Pan, Jing

    2017-01-01

    We performed density functional theory study on electronic structure, magnetic properties and stability of zigzag MoS_2 nanoribbons (ZMoS_2NRs) with and without oxygen (O) passivation. The bare ZMoS_2NRs are magnetic metal with ferromagnetic edge states, edge passivation decreases their magnetism because of the decrease of edge unsaturated electrons. Obviously, the electronic structure and magnetic properties of ZMoS_2NRs greatly depend on edge states. When both edges are passivated by O atoms, ZMoS_2NRs are nonmagnetic metals. When either edge is passivated by O atoms, the systems exhibit single-edge ferromagnetism and magnetism concentrates on the non-passivated edge. Edge passivation can not only tune the magnetism of ZMoS_2NRs, but also enhance their stability by eliminating dangling bonds. These interesting findings on ZMoS_2NRs may open the possibility of their application in nanodevices and spintronics. - Highlights: • Edge passivation for tuning magnetism of zigzag MoS_2 nanoribbons (ZMoS_2NRs) is proposed. • Edge passivation can tune ZMoS_2NRs from nonmagnetic metal to ferromagnetic metal. • When either edge is passivated, the systems exhibit single-edge ferromagnetic states. • These findings may inspire great interest in the community of ZMoS_2NRs and motivate numerous experimental researches.

  4. Pinning of fullerene lowest unoccupied molecular orbital edge at the interface with standing up copper phthalocyanine

    International Nuclear Information System (INIS)

    Wang, Chenggong; Irfan, Irfan; Turinske, Alexander J.; Gao, Yongli

    2012-01-01

    The electronic structure evolution of interfaces of fullerene (C 60 ) with copper phthalocyanine (CuPc) on highly oriented pyrolitic graphite (HOPG) and on native silicon oxide has been investigated with ultra-violet photoemission spectroscopy and inverse photoemission spectroscopy. The lowest unoccupied molecular orbital edge of C 60 was found to be pinned at the interface with CuPc on SiO 2 . A substantial difference in the electron affinity of CuPc on the two substrates was observed as the orientation of CuPc is lying flat on HOPG and standing up on SiO 2 . The ionization potential and electron affinity of C 60 were not affected by the orientation of CuPc due to the spherical symmetry of C 60 molecules. We observed band bending in C 60 on the standing-up orientation of CuPc molecules, while the energy levels of C 60 on the flat lying orientation of CuPc molecules were observed to be flat. - Highlights: ► Orientation of copper phthalocyanine (CuPc) on ordered graphite and silicon oxide. ► Pinning of lowest unoccupied molecular orbital edge of C60 to the Fermi level on CuPc. ► No C60 pinning or band bending was observed on flat laying CuPc. ► Results are useful for organic photovoltaic and organic light emitting diode research.

  5. The X-ray energy response of silicon. Part A. Theory

    International Nuclear Information System (INIS)

    Fraser, G.W.; Abbey, A.F.; Holland, A.; McCarthy, K.; Owens, A.; Wells, A.

    1994-01-01

    In this, the first part of a two-part study of the interaction of soft X-rays with silicon, motivated by the calibration requirements of CCD imaging spectrometers in astronomy, we describe a Monte Carlo model of X-ray energy loss whose products are the energy- and temperature-dependences of (i) W, the average energy required to create an electron-hole pair, and (ii) the Fano factor F. W and F have invariably been treated as material constants in previous analyses of Si X-ray detector performance. We show that in fact, at constant detector temperature T, W is an increasing function of X-ray energy for E -4 K -1 at a typical CCD operating temperature of 170 K. We discuss the practical implications of these results. Finally, we describe our separate calculations of the near-edge variation of CCD quantum detection efficiency arising from silicon K-shell Extended X-ray Absorption Fine Structure (EXAFS). ((orig.))

  6. Novel silicon n-on-p edgeless planar pixel sensors for the ATLAS upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Bomben, M., E-mail: marco.bomben@cern.ch [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Bagolini, A.; Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); Bosisio, L. [Università di Trieste, Dipartimento di Fisica and INFN, Trieste (Italy); Calderini, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Università di Pisa, Pisa (Italy); INFN Sez. di Pisa, Pisa (Italy); Chauveau, J. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Université de Genève, Genève (Switzerland); Marchiori, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy)

    2013-12-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.

  7. Novel silicon n-on-p edgeless planar pixel sensors for the ATLAS upgrade

    International Nuclear Information System (INIS)

    Bomben, M.; Bagolini, A.; Boscardin, M.; Bosisio, L.; Calderini, G.; Chauveau, J.; Giacomini, G.; La Rosa, A.; Marchiori, G.; Zorzi, N.

    2013-01-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown

  8. Silicon photonic IC embedded optical-PCB for high-speed interconnect application

    Science.gov (United States)

    Kallega, Rakshitha; Nambiar, Siddharth; Kumar, Abhai; Ranganath, Praveen; Selvaraja, Shankar Kumar

    2018-02-01

    Optical-Printed Circuit Board (PCB) is an emerging optical interconnect technology to bridge the gap between the board edge and the processing module. The technology so far has been used as a broadband transmitter using polymer waveguides in the PCB. In this paper, we report a Silicon Nitride based photonic IC embedded in the PCB along with the polymers as waveguides in the PCB. The motivation for such integration is to bring routing capability and to reduce the power loss due to broadcasting mode.

  9. Annealing effects on recombinative activity of nickel at direct silicon bonded interface

    Energy Technology Data Exchange (ETDEWEB)

    Kojima, Takuto, E-mail: tkojima@toyota-ti.ac.jp; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya, 468-8511 (Japan)

    2015-09-15

    By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi{sub 2}.

  10. Nanostructured 2D cellular materials in silicon by sidewall transfer lithography NEMS

    Science.gov (United States)

    Syms, Richard R. A.; Liu, Dixi; Ahmad, Munir M.

    2017-07-01

    Sidewall transfer lithography (STL) is demonstrated as a method for parallel fabrication of 2D nanostructured cellular solids in single-crystal silicon. The linear mechanical properties of four lattices (perfect and defected diamond; singly and doubly periodic honeycomb) with low effective Young’s moduli and effective Poisson’s ratio ranging from positive to negative are modelled using analytic theory and the matrix stiffness method with an emphasis on boundary effects. The lattices are fabricated with a minimum feature size of 100 nm and an aspect ratio of 40:1 using single- and double-level STL and deep reactive ion etching of bonded silicon-on-insulator. Nanoelectromechanical systems (NEMS) containing cellular materials are used to demonstrate stretching, bending and brittle fracture. Predicted edge effects are observed, theoretical values of Poisson’s ratio are verified and failure patterns are described.

  11. Pixel sensors with slim edges and small pitches for the CMS upgrades for HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Vernieri, Caterina, E-mail: cvernier@fnal.gov [Fermilab, Batavia, IL 60510 (United States); Bolla, Gino; Rivera, Ryan; Uplegger, Lorenzo [Fermilab, Batavia, IL 60510 (United States); Zoi, Irene [Fermilab, Batavia, IL 60510 (United States); University of Florence, Firenze, 50121 (Italy)

    2017-02-11

    Planar n-in-n silicon detectors with small pitches and slim edges are being investigated for the innermost layers of tracking devices for the foreseen upgrades of the LHC experiments. Sensor prototypes compatible with the CMS readout, fabricated by Sintef, were tested in the laboratory and with a 120 GeV/c proton beam at the Fermilab test beam facility before and after irradiation with up to 2×10{sup 15} n{sub eq}/cm{sup 2} fluence. Preliminary results of the data analysis are presented.

  12. Influence of geometrical and electrical parameters of masking layers on the electrochemical etching of silicon for single trench formation

    International Nuclear Information System (INIS)

    Gautier, G; Ventura, L; Jerisian, R

    2005-01-01

    Deep single trenches can be produced at the edge of apertures of protective films masking the surface of silicon samples. This macropore formation, from polarized HF based solutions, is electrically activated depending on the mask geometrical and physical parameters whatever the silicon type or the electrolyte composition. The mask thickness increase is known to induce deeper trenches. In this paper, we show that we can predict and localize this phenomenon by simulating two dimensional hole current distributions below the mask. We demonstrate also the influence of the material permittivity on trench depth. These 2D simulation results are correlated with experimental results

  13. Silicon epitaxy on textured double layer porous silicon by LPCVD

    International Nuclear Information System (INIS)

    Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

    2010-01-01

    Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

  14. Diatom-induced silicon isotopic fractionation in Antarctic sea ice

    Science.gov (United States)

    Francois, F.; Damien, C.; Jean-Louis, T.; Anthony, W.; Luc, A.

    2006-12-01

    We measured silicon-isotopic composition of dissolved silicon and biogenic silica collected by sequential melting from spring 2003 Antarctic pack ice (Australian sector). Sea ice is a key ecosystem in the Southern Ocean and its melting in spring has been often thought to have a seeding effect for the surface waters, triggering blooms in the mixed layer. This work is the first investigation of the silicon isotopes' proxy in sea ice and allows to estimate the activity of sea-ice diatoms in the different brine structures and the influence of sea- ice diatoms on the spring ice edge blooms. The relative use of the dissolved silicon pool by sea-ice diatoms is usually assessed by calculating nutrient:salinity ratios in the brines. However such an approach is biased by difficulties in evaluating the initial nutrient concentrations in the different brines structures, and by the impossibility to account for late sporadic nutrient replenishments. The silicon-isotopic composition of biogenic silica is a convenient alternative since it integrates an average Si utilization on all generations of diatoms. Measurements were performed on a MC-ICP-MS, in dry plasma mode using external Mg doping. Results are expressed as delta29Si relative to the NBS28 standard. From three sea ice cores with contrasted physico-chemical characteristics, we report significant isotopic fractionations linked to the diatoms activity, with distinct silicon biogeochemical dynamics between different brine structure. The diatoms in snow ice and in brine pockets of frazil or congelation ice have the most positive silicon-isotopic composition (+0.53 to +0.86 p.mil), indicating that they grow in a closed system and use a significant part of the small dissolved silicon pool. In the brine channels and skeletal layer, diatoms display a relatively less positive Si-isotopic composition (+0.41 to +0.70 p.mil), although it is still heavier compared to equilibrium fractionation (+0.38 p.mil). This suggests that they have

  15. Thermal properties of calorimeters with Ti/Au transition-edge sensors on silicon nitride membranes

    International Nuclear Information System (INIS)

    Ukibe, M.; Tanaka, K.; Koyanagi, M.; Morooka, T.; Pressler, H.; Ohkubo, M.; Kobayashi, N.

    2000-01-01

    We are developing X-ray microcalorimeters employing superconducting-transition-edge sensors (TESs) for relatively high operation-temperatures of an 3 He cryostat. The TESs are proximity bilayers of Ti and Au. An important thermal parameters, the thermal conductance G, of the microcalorimeters on SiN x membranes was evaluated by a simple method using R-T curves at different bias currents. It has been shown that the G value can be controlled by altering the membrane thickness and size

  16. Research and Manufacture of Casting Automation Line for LBMA 1000 Ounces Standard Silver Ingot Based on Production Logistics%基于生产物流的LBMA1000盎司标准银锭自动化铸造线的研制

    Institute of Scientific and Technical Information of China (English)

    郑端; 吴建明; 安国瑞; 朱建斌; 王天才; 周鹤立; 翟瑞锋; 王勇

    2016-01-01

    In order to improve the production efficiency of the London bullion market association (LBMA)1 000 ounces standard silver,using the method of production logistics management to analyze its production process,delete the redundant movement of production logistics and optimize the logistics process,a set of silver ingot automatic casting line was developed in wkich several logistics action were completed by an integrated device for casting silver ingot,such as baking molds,casting and molding of 7 pieces of silver ingots one by one,feedbacking pouring mass signal,slow cooling temperature and demoulding,etc.Trial production shows that the casting line can shorten the silver ingot manufacturing time by 36.5%,handling time by 94%,transport distance by 91.6%,and it can reduce operating staff by 40%,improve yield rate of finished products by 5.33%,significantly improve the production efficiency.The produced 1000 ounces standard silver ingots can meet the requirements of LBMA.%为了提高伦敦金银市场协会(LBMA)1 000盎司标准银锭的生产效率,从生产物流的角度分析了1000盎司标准银锭的生产工艺,删除了生产物流中的多余动作,优化了物流过程,设计了一套银锭自动化铸造线.研制了铸造线的关键设备:银锭铸造车,它把烘模、7块银锭逐一浇注成型、反馈浇注质量信号、补温缓冷、脱模等物流动作集中在一台单体设备上.通过试生产表明,铸造线能够缩短银锭制造时间36.5%、搬运时间94%、搬运距离91.6%,减少操作人员40%,提高成品率5.33%,生产出符合LBMA要求的1000盎司标准银锭.

  17. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    Science.gov (United States)

    Agosto, William N.

    1993-01-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  18. Power spectrum weighted edge analysis for straight edge detection in images

    Science.gov (United States)

    Karvir, Hrishikesh V.; Skipper, Julie A.

    2007-04-01

    Most man-made objects provide characteristic straight line edges and, therefore, edge extraction is a commonly used target detection tool. However, noisy images often yield broken edges that lead to missed detections, and extraneous edges that may contribute to false target detections. We present a sliding-block approach for target detection using weighted power spectral analysis. In general, straight line edges appearing at a given frequency are represented as a peak in the Fourier domain at a radius corresponding to that frequency, and a direction corresponding to the orientation of the edges in the spatial domain. Knowing the edge width and spacing between the edges, a band-pass filter is designed to extract the Fourier peaks corresponding to the target edges and suppress image noise. These peaks are then detected by amplitude thresholding. The frequency band width and the subsequent spatial filter mask size are variable parameters to facilitate detection of target objects of different sizes under known imaging geometries. Many military objects, such as trucks, tanks and missile launchers, produce definite signatures with parallel lines and the algorithm proves to be ideal for detecting such objects. Moreover, shadow-casting objects generally provide sharp edges and are readily detected. The block operation procedure offers advantages of significant reduction in noise influence, improved edge detection, faster processing speed and versatility to detect diverse objects of different sizes in the image. With Scud missile launcher replicas as target objects, the method has been successfully tested on terrain board test images under different backgrounds, illumination and imaging geometries with cameras of differing spatial resolution and bit-depth.

  19. Rectangular optical filter based on high-order silicon microring resonators

    Science.gov (United States)

    Bao, Jia-qi; Yu, Kan; Wang, Li-jun; Yin, Juan-juan

    2017-07-01

    The rectangular optical filter is one of the most important optical switching components in the dense wavelength division multiplexing (DWDM) fiber-optic communication system and the intelligent optical network. The integrated highorder silicon microring resonator (MRR) is one of the best candidates to achieve rectangular filtering spectrum response. In general, the spectrum response rectangular degree of the single MRR is very low, so it cannot be used in the DWDM system. Using the high-order MRRs, the bandwidth of flat-top pass band, the out-of-band rejection degree and the roll-off coefficient of the edge will be improved obviously. In this paper, a rectangular optical filter based on highorder MRRs with uniform couplers is presented and demonstrated. Using 15 coupled race-track MRRs with 10 μm in radius, the 3 dB flat-top pass band of 2 nm, the out-of-band rejection ratio of 30 dB and the rising and falling edges of 48 dB/nm can be realized successfully.

  20. Rectangular optical filter based on high-order silicon microring resonators

    Institute of Scientific and Technical Information of China (English)

    BAO Jia-qi; YU Kan; WANG Li-jun; YIN Juan-juan

    2017-01-01

    The rectangular optical filter is one of the most important optical switching components in the dense wavelength division multiplexing (DWDM) fiber-optic communication system and the intelligent optical network.The integrated highorder silicon microring resonator (MRR) is one of the best candidates to achieve rectangular filtering spectrum response.In general,the spectrum response rectangular degree of the single MRR is very low,so it cannot be used in the DWDM system.Using the high-order MRRs,the bandwidth of flat-top pass band,the out-of-band rejection degree and the roll-off coefficient of the edge will be improved obviously.In this paper,a rectangular optical filter based on highorder MRRs with uniform couplers is presented and demonstrated.Using 15 coupled race-track MRRs with 10 μm in radius,the 3 dB flat-top pass band of 2 nm,the out-of-band rejection ratio of 30 dB and the rising and falling edges of 48 dB/nm can be realized successfully.

  1. Silicon Drift Detectors - A Novel Technology for Vertex Detectors

    Science.gov (United States)

    Lynn, D.

    1996-10-01

    Silicon Drift Detectors (SDD) are novel position sensing silicon detectors which operate in a manner analogous to gas drift detectors. Single SDD's were shown in the CERN NA45 experiment to permit excellent spatial resolution (pseudo-rapidity. Over the last three years we undertook a concentrated R+D effort to optimize the performance of the detector by minimizing the inactive area, the operating voltage and the data volume. We will present test results from several wafer prototypes. The charge produced by the passage of ionizing particles through the bulk of the detectors is collected on segmented anodes, with a pitch of 250 μm, on the far edges of the detector. The anodes are wire-bonded to a thick film multi-chip module which contains preamplifier/shaper chips and CMOS based switched capacitor arrays used as an analog memory pipeline. The ADC is located off-detector. The complete readout chain from the wafer to the DAQ will be presented. Finally we will show physics performance simulations based on the resolution achieved by the SVT prototypes.

  2. Experimental analysis of segregation and porosity during the transient unidirectional solidification of an Al-9%Si-3%Cu ternary

    International Nuclear Information System (INIS)

    Gomes, L.G.; Moutinho, D.J.; Rocha, O.L.; Ferreira, I.L.; Garcia, A.

    2010-01-01

    The solute macro segregation and formation of micro porosity were experimental y investigated in the transient unidirectional solidification of a ternary league. The solute macro segregation profile, the specific theoretical mass and the apparent specific mass are presented alongside of ingot length. The experimental segregation profile of the solute were obtained through the X ray fluorescence spectrometry technique. The micro porosity measurements were performed by using the technique of picnometry. The presence of silicon on the league acted as inhibitor of inverse segregation of the copper, which is a typically observed in the transient unidirectional solidified of Al-Cu leagues. The volumetric fractions of porous has shown a ascendent tendency from the base to the top of ingot

  3. An investigation into the radiation damage of the silicon detectors of the H1-PLUG calorimeter within the HERA environment

    International Nuclear Information System (INIS)

    Hildesheim, W.; Seidel, M.

    1995-07-01

    The silicon detectors used in the H1-PLUG calorimeter have shown increasing aging effects during the '94 run period of the electron proton storage ring HERA. These effects were particularly manifest as degradation of the signal to noise level and the calibration stability. The reasons for this behaviour have been found to be correlated with radiation damage to the silicon oxide passivation edges of the detectors in strong and fluctuating increases of the leakage currents and in severe changes of the flat band voltages. Depletion voltages however are found to be stable and therefore bulk damage of the silicon can be excluded. A comparison with measurements made by thermoluminescence dosimeters as well as related laboratory experiments suggest that the aging is due to very low energetic electrons and photons. (orig.)

  4. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  5. Use of Monocrystalline Silicon as Tool Material for Highly Accurate Blanking of Thin Metal Foils

    International Nuclear Information System (INIS)

    Hildering, Sven; Engel, Ulf; Merklein, Marion

    2011-01-01

    The trend towards miniaturisation of metallic mass production components combined with increased component functionality is still unbroken. Manufacturing these components by forming and blanking offers economical and ecological advantages combined with the needed accuracy. The complexity of producing tools with geometries below 50 μm by conventional manufacturing methods becomes disproportional higher. Expensive serial finishing operations are required to achieve an adequate surface roughness combined with accurate geometry details. A novel approach for producing such tools is the use of advanced etching technologies for monocrystalline silicon that are well-established in the microsystems technology. High-precision vertical geometries with a width down to 5 μm are possible. The present study shows a novel concept using this potential for the blanking of thin copper foils with monocrystallline silicon as a tool material. A self-contained machine-tool with compact outer dimensions was designed to avoid tensile stresses in the brittle silicon punch by an accurate, careful alignment of the punch, die and metal foil. A microscopic analysis of the monocrystalline silicon punch shows appropriate properties regarding flank angle, edge geometry and surface quality for the blanking process. Using a monocrystalline silicon punch with a width of 70 μm blanking experiments on as-rolled copper foils with a thickness of 20 μm demonstrate the general applicability of this material for micro production processes.

  6. Orientation of One-Dimensional Silicon Polymer Films Studied by X-Ray Absorption Spectroscopy

    Directory of Open Access Journals (Sweden)

    Md. Abdul Mannan

    2012-01-01

    Full Text Available Molecular orientations for thin films of one-dimensional silicon polymers grown by vacuum evaporation have been assigned by near-edge X-ray absorption fine structure (NEXAFS using linearly polarized synchrotron radiation. The polymer investigated was polydimethylsilane (PDMS which is the simplest stable silicon polymer, and one of the candidate materials for one-dimensional molecular wire. For PDMS films deposited on highly oriented pyrolytic graphite (HOPG, four resonance peaks have been identified in the Si K-edge NEXAFS spectra. Among these peaks, the intensities of the two peaks lower-energy at 1842.0 eV and 1843.2 eV were found to be strongly polarization dependent. The peaks are assigned to the resonance excitations from the Si 1s to σ∗ pyz and σ∗ px orbitals localized at the Si–C and Si–Si bonds, respectively. Quantitative evaluation of the polarization dependence of the NEXAFS spectra revealed that the molecules are self-assembled on HOPG surface, and the backbones of the PDMS are oriented nearly parallel to the surface. The observed orientation is opposite to the previously observed results for PDMS on the other surfaces such as oxide (indium tin oxide and metal (polycrystalline copper. The flat-lying feature of PDMS observed only on HOPG surface is attributed to the interaction between CH bonds in PDMS and π orbitals in HOPG surface.

  7. Structure and field emission of graphene layers on top of silicon nanowire arrays

    International Nuclear Information System (INIS)

    Huang, Bohr-Ran; Chan, Hui-Wen; Jou, Shyankay; Chen, Guan-Yu; Kuo, Hsiu-An; Song, Wan-Jhen

    2016-01-01

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  8. Structure and field emission of graphene layers on top of silicon nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Bohr-Ran; Chan, Hui-Wen [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Jou, Shyankay, E-mail: sjou@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Chen, Guan-Yu [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Kuo, Hsiu-An; Song, Wan-Jhen [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

    2016-01-30

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  9. Implantation of xenon in amorphous carbon and silicon for brachytherapy application

    International Nuclear Information System (INIS)

    Marques, F.C.; Barbieri, P.F.; Viana, G.A.; Silva, D.S. da

    2013-01-01

    We report a procedure to implant high dose of xenon atoms (Xe) in amorphous carbon, a-C, and amorphous silicon, a-Si, for application in brachytherapy seeds. An ion beam assisted deposition (IBAD) system was used for the deposition of the films, where one ion gun was used for sputtering a carbon (or silicon) target, while the other ion gun was used to simultaneously bombard the growing film with a beam of xenon ion Xe + in the 0–300 eV range. Xe atoms were implanted into the film with concentration up to 5.5 at.%, obtained with Xe bombardment energy in the 50–150 eV range. X-ray absorption spectroscopy was used to investigate the local arrangement of the implanted Xe atoms through the Xe L III absorption edge (4.75 keV). It was observed that Xe atoms tend to agglomerate in nanoclusters in a-C and are dispersed in a-Si.

  10. Low-temperature micro-photoluminescence spectroscopy on laser-doped silicon with different surface conditions

    Science.gov (United States)

    Han, Young-Joon; Franklin, Evan; Fell, Andreas; Ernst, Marco; Nguyen, Hieu T.; Macdonald, Daniel

    2016-04-01

    Low-temperature micro-photoluminescence spectroscopy (μ-PLS) is applied to investigate shallow layers of laser-processed silicon for solar cell applications. Micron-scale measurement (with spatial resolution down to 1 μm) enables investigation of the fundamental impact of laser processing on the electronic properties of silicon as a function of position within the laser-processed region, and in particular at specific positions such as at the boundary/edge of processed and unprocessed regions. Low-temperature μ-PLS enables qualitative analysis of laser-processed regions by identifying PLS signals corresponding to both laser-induced doping and laser-induced damage. We show that the position of particular luminescence peaks can be attributed to band-gap narrowing corresponding to different levels of subsurface laser doping, which is achieved via multiple 248 nm nanosecond excimer laser pulses with fluences in the range 1.5-4 J/cm2 and using commercially available boron-rich spin-on-dopant precursor films. We demonstrate that characteristic defect PL spectra can be observed subsequent to laser doping, providing evidence of laser-induced crystal damage. The impact of laser parameters such as fluence and number of repeat pulses on laser-induced damage is also analyzed by observing the relative level of defect PL spectra and absolute luminescence intensity. Luminescence owing to laser-induced damage is observed to be considerably larger at the boundaries of laser-doped regions than at the centers, highlighting the significant role of the edges of laser-doped region on laser doping quality. Furthermore, by comparing the damage signal observed after laser processing of two different substrate surface conditions (chemically-mechanically polished and tetramethylammonium hydroxide etched), we show that wafer preparation can be an important factor impacting the quality of laser-processed silicon and solar cells.

  11. Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface-Emitting Lasers on Silicon (Open Access Publisher’s Version)

    Science.gov (United States)

    2016-01-04

    TM, p) polarizations, for PCSEL-I and -II respectively. One can see that all of these bands are very flat at the edges close to Γ point, which... organised In0. 5Ga0. 5As quantum dot laser on silicon. Electron. Lett. 41, 742–744 (2005). 7. Balakrishnan, G. et al. Room-Temperature Optically Pumped

  12. Elastically Deformable Side-Edge Link for Trailing-Edge Flap Aeroacoustic Noise Reduction

    Science.gov (United States)

    Khorrami, Mehdi R. (Inventor); Lockard, David P. (Inventor); Moore, James B. (Inventor); Su, Ji (Inventor); Turner, Travis L. (Inventor); Lin, John C. (Inventor); Taminger, Karen M. (Inventor); Kahng, Seun K. (Inventor); Verden, Scott A. (Inventor)

    2014-01-01

    A system is provided for reducing aeroacoustic noise generated by an aircraft having wings equipped with trailing-edge flaps. The system includes a plurality of elastically deformable structures. Each structure is coupled to and along one of the side edges of one of the trailing-edge flaps, and is coupled to a portion of one of the wings that is adjacent to the one of the side edges. The structures elastically deform when the trailing-edge flaps are deployed away from the wings.

  13. Localized Edge Vibrations and Edge Reconstruction by Joule Heating in Graphene Nanostructures

    DEFF Research Database (Denmark)

    Engelund, Mads; Fürst, Joachim Alexander; Jauho, Antti-Pekka

    2010-01-01

    Control of the edge topology of graphene nanostructures is critical to graphene-based electronics. A means of producing atomically smooth zigzag edges using electronic current has recently been demonstrated in experiments [Jia et al., Science 323, 1701 (2009)]. We develop a microscopic theory...... for current-induced edge reconstruction using density functional theory. Our calculations provide evidence for localized vibrations at edge interfaces involving unpassivated armchair edges. We demonstrate that these vibrations couple to the current, estimate their excitation by Joule heating, and argue...

  14. Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

    International Nuclear Information System (INIS)

    Tsukamoto, K.; Akasaka, Y.; Horie, K.

    1977-01-01

    Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

  15. Through-Silicon-Via Underfill Dispensing for 3D Die/Interposer Stacking

    Science.gov (United States)

    Le, Fuliang

    The next generation packaging keeps up with the increased demands of functionality by using the third dimension. 3D chip stacking with TSVs has been identified as one of the major technologies to achieve higher silicon density and shorter interconnection. In order to protect solder interconnections from hostile environments and redistribute thermal stress caused by CTE mismatch, underfill should be applied for the under-chip spaces. In this study, TSV underfill dispensing is introduced to address the underfill challenge for 3D chip stacks. The material properties are first measured and the general trend indicates viscosity and contact angle dropping significantly with an increase in temperature, and surface tension falling slightly as the temperature increases. Underfill should assure a complete encapsulation, avoiding excessive filling time that can result in substantial manufacturing delays. Typically, the inflows for TSV underfill can be free droplets or a constant flow rate. For a constant inflow, the underfill flow is driven by pressure difference and the filling time is governed by flow radius, gap clearance and the constant flow rate. For an inflow of free droplets, the underfill flow is driven by capillary action and the filling time is related to viscosity, flow radius, gap clearance, surface tension, contact angle and TSV size. In general, TSV underfill dispensing with a constant inflow has much shorter filling time than dispensing with an inflow of free droplets. TSV underfill dispensing on a 3D chip stack may induce the risk of an edge flood failure. In order to avoid an edge flood, fluid pressure around the sidewalls of a 3D chip stack cannot exceed limit equilibrium pressure. For TSV dispensing with free droplets, there is no risk of forming an edge flood. However, for a constant inflow, TSV dispensing should be carefully controlled to avoid excessive pressure. Besides, it is suggested that the TSVs in stacked chips be aligned in the vertical

  16. Porous silicon: silicon quantum dots for photonic applications

    International Nuclear Information System (INIS)

    Pavesi, L.; Guardini, R.

    1996-01-01

    Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

  17. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

  18. Reduction of airfoil trailing edge noise by trailing edge blowing

    International Nuclear Information System (INIS)

    Gerhard, T; Carolus, T; Erbslöh, S

    2014-01-01

    The paper deals with airfoil trailing edge noise and its reduction by trailing edge blowing. A Somers S834 airfoil section which originally was designed for small wind turbines is investigated. To mimic realistic Reynolds numbers the boundary layer is tripped on pressure and suction side. The chordwise position of the blowing slot is varied. The acoustic sources, i.e. the unsteady flow quantities in the turbulent boundary layer in the vicinity of the trailing edge, are quantified for the airfoil without and with trailing edge blowing by means of a large eddy simulation and complementary measurements. Eventually the far field airfoil noise is measured by a two-microphone filtering and correlation and a 40 microphone array technique. Both, LES-prediction and measurements showed that a suitable blowing jet on the airfoil suction side is able to reduce significantly the turbulence intensity and the induced surface pressure fluctuations in the trailing edge region. As a consequence, trailing edge noise associated with a spectral hump around 500 Hz could be reduced by 3 dB. For that a jet velocity of 50% of the free field velocity was sufficient. The most favourable slot position was at 90% chord length

  19. Evaluation of slim-edge, multi-guard, and punch-through-protection structures before and after proton irradiation

    Science.gov (United States)

    Mitsui, S.; Unno, Y.; Ikegami, Y.; Takubo, Y.; Terada, S.; Hara, K.; Takahashi, Y.; Jinnouchi, O.; Nagai, R.; Kishida, T.; Yorita, K.; Hanagaki, K.; Takashima, R.; Kamada, S.; Yamamura, K.

    2013-01-01

    Planar geometry silicon pixel and strip sensors for the high luminosity upgrade of the LHC (HL-LHC) require a high bias voltage of 1000 V in order to withstand a radiation damage caused by particle fluences of 1×1016 1 MeV neq/cm2 and 1×1015 1 MeV neq/cm2 for pixel and strip detectors, respectively. In order to minimize the inactive edge space that can withstand a bias voltage of 1000 V, edge regions susceptible to microdischarge (MD) should be carefully optimized. We fabricated diodes with various edge distances (slim-edge diodes) and with 1-3 multiple guard rings (multi-guard diodes). AC coupling insulators of strip sensors are vulnerable to sudden heavy charge deposition, such as an accidental beam splash, which may destroy the readout AC capacitors. Thus various types of punch-through-protection (PTP) structures were implemented in order to find the most effective structure to protect against heavy charge deposition. These samples were irradiated with 70 MeV protons at fluences of 5×1012 1 MeV neq/cm2-1×1016 1 MeV neq/cm2. Their performances were evaluated before and after irradiation in terms of an onset voltage of the MD, a turn-on voltage of the PTP, and PTP saturation resistance.

  20. A VLSI front-end circuit for microstrip silicon detectors for medical imaging applications

    International Nuclear Information System (INIS)

    Beccherle, R.; Cisternino, A.; Guerra, A. Del; Folli, M.; Marchesini, R.; Bisogni, M.G.; Ceccopieri, A.; Rosso, V.; Stefanini, A.; Tripiccione, R.; Kipnis, I.

    1999-01-01

    An analog CMOS-Integrated Circuit has been developed as Front-End for a double-sided microstrip silicon detector. The IC processes and discriminates signals in the 5-30 keV energy range. Main features are low noise and precise timing information. Low noise is achieved by optimizing the cascoded integrator with the 8 pF detector capacitance and by using an inherently low noise 1.2 μm CMOS technology. Timing information is provided by a double discriminator architecture. The output of the circuit is a digital pulse. The leading edge is determined by a fixed threshold discriminator, while the trailing edge is provided by a zero crossing discriminator. In this paper we first describe the architecture of the Front-End chip. We then present the performance of the chip prototype in terms of noise, minimum discrimination threshold and time resolution

  1. Edge printability: techniques used to evaluate and improve extreme wafer edge printability

    Science.gov (United States)

    Roberts, Bill; Demmert, Cort; Jekauc, Igor; Tiffany, Jason P.

    2004-05-01

    The economics of semiconductor manufacturing have forced process engineers to develop techniques to increase wafer yield. Improvements in process controls and uniformities in all areas of the fab have reduced film thickness variations at the very edge of the wafer surface. This improved uniformity has provided the opportunity to consider decreasing edge exclusions, and now the outermost extents of the wafer must be considered in the yield model and expectations. These changes have increased the requirements on lithography to improve wafer edge printability in areas that previously were not even coated. This has taxed all software and hardware components used in defining the optical focal plane at the wafer edge. We have explored techniques to determine the capabilities of extreme wafer edge printability and the components of the systems that influence this printability. We will present current capabilities and new detection techniques and the influence that the individual hardware and software components have on edge printability. We will show effects of focus sensor designs, wafer layout, utilization of dummy edge fields, the use of non-zero overlay targets and chemical/optical edge bead optimization.

  2. HV Test of the CTS Edgeless Silicon Detector in Vacuum and Close to a Grounded Plate

    CERN Document Server

    Eremin, Vladimir; Ruggiero, Gennaro

    2007-01-01

    The TOTEM Roman Pot Silicon sensors will be operated in vacuum to minimise the mechanical stress of the thin metal window which separates the detector package from the ultra high vacuum of the beam. To approach the beam axis as close as possible the detectors will be mounted with their edge at a distance of the order 100 - 200 um from the thin metal window. As the detectors will be run in overdepletion mode to allow the full charge collection within the shaping time of the readout electronics, there will be a potential drop of more than 100 V across their edge. Moreover this potential drop might need to be further increased with the accumulated radiation dose. The main goals of the tests described in this note are: - Characterisation of the voltage-current characteristics when the detector edge is in the direct vicinity of a grounded metal plate which simulates the above mentioned vacuum window; - Demonstration of the detector operation in vacuum at different pressures.

  3. Edge enhancement improves disruptive camouflage by emphasising false edges and creating pictorial relief.

    Science.gov (United States)

    Egan, John; Sharman, Rebecca J; Scott-Brown, Kenneth C; Lovell, Paul George

    2016-12-06

    Disruptive colouration is a visual camouflage composed of false edges and boundaries. Many disruptively camouflaged animals feature enhanced edges; light patches are surrounded by a lighter outline and/or a dark patches are surrounded by a darker outline. This camouflage is particularly common in amphibians, reptiles and lepidopterans. We explored the role that this pattern has in creating effective camouflage. In a visual search task utilising an ultra-large display area mimicking search tasks that might be found in nature, edge enhanced disruptive camouflage increases crypsis, even on substrates that do not provide an obvious visual match. Specifically, edge enhanced camouflage is effective on backgrounds both with and without shadows; i.e. this is not solely due to background matching of the dark edge enhancement element with the shadows. Furthermore, when the dark component of the edge enhancement is omitted the camouflage still provided better crypsis than control patterns without edge enhancement. This kind of edge enhancement improved camouflage on all background types. Lastly, we show that edge enhancement can create a perception of multiple surfaces. We conclude that edge enhancement increases the effectiveness of disruptive camouflage through mechanisms that may include the improved disruption of the object outline by implying pictorial relief.

  4. Resistivity and thickness effects in dendritic web silicon solar cells

    Science.gov (United States)

    Meier, D. L.; Hwang, J. M.; Greggi, J.; Campbell, R. B.

    1987-01-01

    The decrease of minority carrier lifetime as resistivity decreases in dendritic-web silicon solar cells is addressed. This variation is shown to be consistent with the presence of defect levels in the bandgap which arise from extended defects in the web material. The extended defects are oxide precipitates (SiOx) and the dislocation cores they decorate. Sensitivity to this background distribution of defect levels increases with doping because the Fermi level moves closer to the majority carrier band edge. For high-resistivity dendritic-web silicon, which has a low concentration of these extended defects, cell efficiencies as high as 16.6 percent (4 sq cm, 40 ohm-cm boron-doped base, AM1.5 global, 100 mW/sq cm, 25 C JPL LAPSS1 measurement) and a corresponding electron lifetime of 38 microsec have been obtained. Thickness effects occur in bifacial cell designs and in designs which use light trapping. In some cases, the dislocation/precipitate defect can be passivated through the full thickness of web cells by hydrogen ion implantation.

  5. Edge Matters

    DEFF Research Database (Denmark)

    Earon, Ofri

    2013-01-01

    of this container is to separate inside from outside and to protect and provide privacy, psychological as well as physical (Venturi, 1966). But, if dwelling phenomenon takes place both inside and outside the private house – why is the urban house an enclosed box? What is the differentiation between inside...... and outside the contemporary urban house? And what is the interplay between them? The research argues for re-thinking the edge zone between inside and outside the urban house. Therefore, although, residential buildings in the city are the objects of study, the focal point here is the edge zone along...... the building. The research explores and develops the architectural characteristics of correlations between the resident, the singular unit, the building and the given location at the edge zone. It approaches the edge zone of the urban house as a platform for dynamic interactions between these behaviours...

  6. Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

    Science.gov (United States)

    Colston, Gerard; Myronov, Maksym

    2017-11-01

    Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

  7. Near-edge X-ray absorption fine structure studies of Cr{sub 1−x}M{sub x}N coatings

    Energy Technology Data Exchange (ETDEWEB)

    Mahbubur Rahman, M. [School of Engineering and Information Technology, Murdoch University, Murdoch, WA 6150 (Australia); Department of Physics, Jahangirnagar University, Savar, Dhaka 1342 (Bangladesh); Duan, Alex [School of Chemistry, The University of Melbourne, Parkville, VIC 3010 (Australia); Jiang, Zhong-Tao, E-mail: Z.Jiang@murdoch.edu.au [School of Engineering and Information Technology, Murdoch University, Murdoch, WA 6150 (Australia); Xie, Zonghan [School of Mechanical Engineering, University of Adelaide, SA 5005 (Australia); School of Engineering, Edith Cowan University, WA 6027 (Australia); Wu, Alex [School of Chemistry, The University of Melbourne, Parkville, VIC 3010 (Australia); Amri, Amun [Department of Chemical Engineering, Riau University, Pekanbaru (Indonesia); Cowie, Bruce [Australian Synchrotron, 800 Blackburn Rd., Clayton, VIC 3168 (Australia); Yin, Chun-Yang [Chemical and Analytical Sciences, Murdoch University, Murdoch, WA 6150 (Australia)

    2013-11-25

    Highlights: •Al or Si is doped on CrN and AlN coatings using magnetron sputtering system. •NEXAFS analysis is conducted to measure the Al and Si K-edges, and chromium L-edge. •Structural evolution of CrN matrix with addition of Al or Si element is investigated. -- Abstract: Cr{sub 1−x}M{sub x}N coatings, with doping concentrations (Si or Al) varying from 14.3 to 28.5 at.%, were prepared on AISI M2 tool steel substrates using a TEER UDP 650/4 closed field unbalanced magnetron sputtering system. Near-edge X-ray absorption fine structure (NEXAFS) characterization was carried out to measure the aluminum and silicon K-edges, as well as chromium L-edge, in the coatings. Two soft X-ray techniques, Auger electron yield (AEY) and total fluorescence yield (TFY), were employed to investigate the surface and inner structural properties of the materials in order to understand the structural evolution of CrN matrix with addition of Al (or Si) elements. Investigations on the local bonding states and grain boundaries of the coatings, using NEXAFS technique, provide significant information which facilitates understanding of the local electronic structure of the atoms and shed light on the origins of the high mechanical strength and oxidation resistance of these technologically important coatings.

  8. Silicon sensors for trackers at high-luminosity environment

    Energy Technology Data Exchange (ETDEWEB)

    Peltola, Timo, E-mail: timo.peltola@helsinki.fi

    2015-10-01

    The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system that was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than in the current LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 Collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented. - Highlights: • An overview of the recent results from the RD50 collaboration. • Accuracy of TCAD simulations increased by including both bulk and surface damage. • Sensors with n-electrode readout and MCz material offer higher radiation hardness. • 3D detectors are a promising choice for the extremely high fluence environments. • Detectors with an enhanced charge carrier generation under systematic investigation.

  9. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Mutch, Michael J. [Intercollege Program of Materials, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lenahan, Patrick M. [Intercollege Program of Materials, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); King, Sean W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)

    2016-08-08

    We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.

  10. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  11. An edge pedestal model

    International Nuclear Information System (INIS)

    Stacev, W.M.

    2001-01-01

    A new model for calculation of the gradient scale lengths in the edge pedestal region and of the edge transport barrier width in H-mode tokamak plasmas will be described. Model problem calculations which demonstrate the promise of this model for predicting experimental pedestal properties will be discussed. The density and Prague gradient scale lengths (L) in the edge are calculated from the particle and ion and electron energy radial transport equations, making use of (presumed) known particle and energy fluxes flowing across the edge transport barrier from the core into the SOL and of edge transport coefficients. The average values of the particle and heat fluxes in the edge transport barrier are calculated in terms of the fluxes crossing into the SOL and the atomic physics reaction rates (ionisation, charge-exchange, elastic scattering, impurity radiation) in the edge by integrating the respective transport equations from the pedestal to the separatrix. An important implication of this model is that the pedestal gradient scale lengths depend not just on local pedestal platers properties but also on particle and energy fluxes from the core plasma and on recycling neutral fluxes that penetrate into the plasma edge, both of which in turn depend on the pedestal properties. The MHD edge pressure gradient constraint α≤ α C is used to determine the pressure width of the edge transport barrier, Δ TB = Δ TB (α c ). Three different models for the MHD edge pressure gradient constraint have been investigated: (1) nominal ideal ballooning mode theory, (2) ballooning mode theory taking into account the edge geometry and shear to access He second stability region; and pedestal β-limit theory when the ballooning modes are stabilised by diamagnetic effects. A series of calculations have been made for a DIII-D model problem. The calculated gradient scale lengths and edge transport barrier widths are of the magnitude of values observed experimentally, and certain trends

  12. High-contrast gratings for long-wavelength laser integration on silicon

    Science.gov (United States)

    Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

    2014-02-01

    Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

  13. The influence of ingot annealing on the corrosion resistance of a PrFeCoBNbP alloy

    International Nuclear Information System (INIS)

    Oliveira, M.C.L.; Takiishi, H.; Faria, R.N.; Costa, I.

    2008-01-01

    The influence of the annealing time on the corrosion resistance of a Pr-Fe-Co-B-Nb alloy with the addition of 0.1 wt% P was investigated here using potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). The cast ingot alloys were annealed at 1100 deg. C for 10, 15 and 20 h. The specimens were immersed for 30 days in naturally aerated 0.02 M Na 2 HPO 4 solution at room temperature, during which period the evolution of the electrochemical behavior was assessed using EIS. The results indicated that the corrosion resistance of the Pr 14 Fe bal Co 16 B 6 Nb 0.1 P 0.25 alloy was related to the annealing time and, hence, to its microstructure. Annealing at 1100 deg. C for 10 h was insufficient to eliminate the Fe-α phase from the alloy microstructure, whereas annealing for 15 and 20 h removed an increasing amount of Fe-α phase, thereby increasing the alloy's corrosion resistance

  14. AlMn Transition Edge Sensors for Advanced ACTPol

    Science.gov (United States)

    Li, Dale; Austermann, Jason E.; Beall, James A.; Becker, Daniel T.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Hilton, Gene C.; Ho, Shuay-Pwu; Hubmayr, Johannes; Koopman, Brian J.; McMahon, Jeffrey J.; Nati, Federico; Niemack, Michael D.; Pappas, Christine G.; Salatino, Maria; Schmitt, Benjamin L.; Simon, Sara M.; Staggs, Suzanne T.; Van Lanen, Jeff; Ward, Jonathan T.; Wollack, Edward J.

    2016-07-01

    Advanced ACTPol (AdvACT) will use an array of multichroic polarization-sensitive AlMn transition edge sensor (TES) bolometers read out through time-division multiplexing. Aluminum doped with a low concentration of manganese can be deposited to a bulk film thickness for a more reliable superconducting critical temperature uniformity compared to thin bilayers. To build the TES, the AlMn alloy is deposited, over Nb wiring, to a specific thickness to set the TES normal resistance. The doping concentration of manganese coarsely defines the TES critical temperature, while a fine tuning is achieved by heating the deposited film to a specific temperature. The TES island is connected to the thermal bath via four silicon-nitride membranes, where their geometry defines the thermal conductance to the temperature of the bath. Lastly, the TES heat capacity is increased by addition of PdAu electrically connected to the AlMn film. Designs and performance characteristics of these AlMn TESs are presented for use in AdvACT.

  15. AlMn Transition Edge Sensors for Advanced ACTPol

    Science.gov (United States)

    Li, Dale; Austermann, Jason E.; Beall, James A.; Tucker, Daniel T.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Hilton, Gene C.; Ho, Shuay-Pwu; Hubmayr, Johannes; hide

    2016-01-01

    Advanced ACTPol (Adv ACT) will use an array of multichroic polarization sensitive AIMn transition edge sensor (TES) bolometers read out through time-division multiplexing. Aluminum doped with a low concentration of manganese can be deposited to a bulk film thickness for a more reliable superconducting critical temperature uniformity compared to thin bilayers. To build the TES, the AlMn alloy is deposited, over Nb wiring, to a specific thickness to set the TES normal resistance. The doping concentration of manganese coarsely defines the TES critical temperature, while a fine tuning is achieved by heating the deposited film to a specific temperature. The TES island is connected to the thermal bath via four silicon-nitride membranes, where their geometry defines the thermal conductance to the temperature of the bath. Lastly, the TES heat capacity is increased by addition of PdAu electrically connected to the AlMn film. Designs and performance characteristics of these AlMn TESs are presented for use in AdvACT.

  16. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  17. Tangential 2-D Edge Imaging for GPI and Edge/Impurity Modeling

    International Nuclear Information System (INIS)

    Maqueda, Ricardo; Levinton, Fred M.

    2011-01-01

    Nova Photonics, Inc. has a collaborative effort at the National Spherical Torus Experiment (NSTX). This collaboration, based on fast imaging of visible phenomena, has provided key insights on edge turbulence, intermittency, and edge phenomena such as edge localized modes (ELMs) and multi-faceted axisymmetric radiation from the edge (MARFE). Studies have been performed in all these areas. The edge turbulence/intermittency studies make use of the Gas Puff Imaging diagnostic developed by the Principal Investigator (Ricardo Maqueda) together with colleagues from PPPL. This effort is part of the International Tokamak Physics Activity (ITPA) edge, scrape-off layer and divertor group joint activity (DSOL-15: Inter-machine comparison of blob characteristics). The edge turbulence/blob study has been extended from the current location near the midplane of the device to the lower divertor region of NSTX. The goal of this effort was to study turbulence born blobs in the vicinity of the X-point region and their circuit closure on divertor sheaths or high density regions in the divertor. In the area of ELMs and MARFEs we have studied and characterized the mode structure and evolution of the ELM types observed in NSTX, as well as the study of the observed interaction between MARFEs and ELMs. This interaction could have substantial implications for future devices where radiative divertor regions are required to maintain detachment from the divertor plasma facing components.

  18. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    Science.gov (United States)

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  19. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  20. A hybrid method using the widely-used WIEN2k and VASP codes to calculate the complete set of XAS/EELS edges in a hundred-atoms system.

    Science.gov (United States)

    Donval, Gaël; Moreau, Philippe; Danet, Julien; Larbi, Séverine Jouanneau-Si; Bayle-Guillemaud, Pascale; Boucher, Florent

    2017-01-04

    Most of the recent developments in EELS modelling has been focused on getting a better agreement with measurements. Less work however has been dedicated to bringing EELS calculations to larger structures that can more realistically describe actual systems. The purpose of this paper is to present a hybrid approach well adapted to calculating the whole set of localised EELS core-loss edges (at the XAS level of theory) on larger systems using only standard tools, namely the WIEN2k and VASP codes. We illustrate the usefulness of this method by applying it to a set of amorphous silicon structures in order to explain the flattening of the silicon L 2,3 EELS edge peak at the onset. We show that the peak flattening is actually caused by the collective contribution of each of the atoms to the average spectrum, as opposed to a flattening occurring on each individual spectrum. This method allowed us to reduce the execution time by a factor of 3 compared to a usual-carefully optimised-WIEN2k calculation. It provided even greater speed-ups on more complex systems (interfaces, ∼300 atoms) that will be presented in a future paper. This method is suited to calculate all the localized edges of all the atoms of a structure in a single calculation for light atoms as long as the core-hole effects can be neglected.

  1. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  2. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  3. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  4. Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

    Science.gov (United States)

    Wang, Chenlei

    The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to

  5. Forests on the edge: Microenvironmental drivers of carbon cycle response to edge effects

    Science.gov (United States)

    Reinmann, A.; Hutyra, L.; Smith, I. A.; Thompson, J.

    2017-12-01

    Twenty percent of the world's forest is within 100 m of a forest edge, but much of our understanding of forest carbon (C) cycling comes from large, intact ecosystems, which creates an important mismatch between the landscapes we study and those we aim to characterize. The temperate broadleaf forest is the most heavily fragmented forest biome in the world and its growth and carbon storage responses to forest edge effects appear to be the opposite of those in the tropical and boreal regions. We used field measurements to quantify the drivers of temperate forest C cycling response to edge effects, characterizing vegetative growth, respiration, and forest structure. We find large gradients in air and soil temperature from the forest interior to edge (up to 4 and 10° C, respectively) and the magnitude of this gradient is inversely correlated to the size of the forest edge growth enhancement. Further, leaf area index increases with proximity to the forest edge. While we also find increases in soil respiration between the forest interior and edge, this flux is small relative to aboveground growth enhancement near the edge. These findings represent an important advancement in our understanding of forest C cycle response to edge effects and will greatly improve our capacity to constrain biogenic C fluxes in fragmented and heterogeneous landscapes.

  6. Edge modulation of electronics and transport properties of cliff-edge phosphorene nanoribbons

    Science.gov (United States)

    Guo, Caixia; Wang, Tianxing; Xia, Congxin; Liu, Yufang

    2017-12-01

    Based on the first-principles calculations, we study the electronic structures and transport properties of cliff-like edge phosphorene nanoribbons (CPNRs), considering different types of edge passivation. The band structures of bare CPNRs possess the metallic features; while hydrogen (H), fluorine (F), chlorine (Cl) and oxygen (O) atoms-passivated CPNRs are semiconductor materials, and the band gap values monotonically decrease when the ribbon width increases. Moreover, the H and F-passivated CPNRs exhibit the direct band gap characteristics, while the Cl and O-passivated cases show the features of indirect band gap. In addition, the edge passivated CPNRs are more energetically stable than bare edge case. Meanwhile, our results also show that the transport properties of the CPNRs can be obviously influenced by the different edge passivation.

  7. Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

    International Nuclear Information System (INIS)

    Oude Elferink, J.B.

    1989-01-01

    In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

  8. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  9. Report on achievements in fiscal 1999 on research and development of immediately effective and innovative energy environment technology. Part 1. Development of immediately effective and high-efficiency solar cells, and development of technology to slice and manufacture thin-type large-area polycrystalline substrates; 1999 nendo sokkoteki kakushinteki energy kankyo gijutsu kenkyu kaihatsu seika hokokusho. Sokkogata kokoritsu taiyo denchi gijutsu kaihatsu (usugata daimenseki takessho kiban slice seizo gijutsu kaihatsu 1)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    With an objective of decreasing silicon usage quantity for the purpose of reducing the solar cell production cost, development is being performed on an ingot cutting technology to cut a silicon ingot to Kerf loss of 150 {mu} m and thickness of 150 {mu} m, and in which the produced wafers can withstand the cell making. Investigations revealed that a wire saw is suitable as the cutting system, and the wire used must have a diameter of less than 120 {mu} m, and a strength of more than 3850 N/mm{sup 2}. A prototype wire was fabricated, whose diameter is 120 {mu} m, and in which the strength is distributed between 3870 and 4110 N/mm{sup 2}. It was found possible that a wire of 160 {mu} m can be used to slice an ingot having a cross section surface of 150 mm square and a length of 300 mm into a slice having a Kerf loss of 200 {mu} m and a thickness of 180 {mu} m. This wafer had the in-plane distribution of the substrate thickness at {+-} 12.5 {mu}, swell of 120 {mu} at maximum, and surface roughness of 5 {mu}. Making ten of these wafers into a cell resulted in a yield of 60%. Assignments are the clarification of the properties of the cutting wire, the preparation of a thin wire with homogeneous quality, and the establishment of a technology to cut Kerf loss of 150 {mu} and substrate thickness of 150 {mu}. (NEDO)

  10. Smoothness in Binomial Edge Ideals

    Directory of Open Access Journals (Sweden)

    Hamid Damadi

    2016-06-01

    Full Text Available In this paper we study some geometric properties of the algebraic set associated to the binomial edge ideal of a graph. We study the singularity and smoothness of the algebraic set associated to the binomial edge ideal of a graph. Some of these algebraic sets are irreducible and some of them are reducible. If every irreducible component of the algebraic set is smooth we call the graph an edge smooth graph, otherwise it is called an edge singular graph. We show that complete graphs are edge smooth and introduce two conditions such that the graph G is edge singular if and only if it satisfies these conditions. Then, it is shown that cycles and most of trees are edge singular. In addition, it is proved that complete bipartite graphs are edge smooth.

  11. Cutting Edge Localisation in an Edge Profile Milling Head

    NARCIS (Netherlands)

    Fernandez Robles, Laura; Azzopardi, George; Alegre, Enrique; Petkov, Nicolai

    2015-01-01

    Wear evaluation of cutting tools is a key issue for prolonging their lifetime and ensuring high quality of products. In this paper, we present a method for the effective localisation of cutting edges of inserts in digital images of an edge profile milling head. We introduce a new image data set of

  12. Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

    2001-01-01

    The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

  13. Edge colouring by total labellings

    DEFF Research Database (Denmark)

    Brandt, Stephan; Rautenbach, D.; Stiebitz, M.

    2010-01-01

    We introduce the concept of an edge-colouring total k-labelling. This is a labelling of the vertices and the edges of a graph G with labels 1, 2, ..., k such that the weights of the edges define a proper edge colouring of G. Here the weight of an edge is the sum of its label and the labels of its...

  14. Linear Optical Response of Silicon Nanotubes Under Axial Magnetic Field

    Science.gov (United States)

    Chegel, Raad; Behzad, Somayeh

    2013-01-01

    We investigated the optical properties of silicon nanotubes (SiNTs) in the low energy region, E < 0.5 eV, and middle energy region, 1.8 eV < E < 2 eV. The dependence of optical matrix elements and linear susceptibility on radius and magnetic field, in terms of one-dimensional (1-d) wavevector and subband index, is calculated using the tight-binding approximation. It is found that, on increasing the nanotube diameter, the low-energy peaks show red-shift and their intensities are decreased. Also, we found that in the middle energy region all tubes have two distinct peaks, where the energy position of the second peak is approximately constant and independent of the nanotube diameter. Comparing the band structure of these tubes in different magnetic fields, several differences are clearly seen, such as splitting of degenerate bands, creation of additional band-edge states, and bandgap modification. It is found that applying the magnetic field leads to a phase transition in zigzag silicon hexagonal nanotubes (Si h-NTs), unlike in zigzag silicon gear-like nanotubes (Si g-NTs), which remain semiconducting in any magnetic field. We found that the axial magnetic field has two effects on the linear susceptibility spectrum, namely broadening and splitting. The axial magnetic field leads to the creation of a peak with energy less than 0.2 eV in metallic Si h-NTs, whereas in the absence of a magnetic field such a transition is not allowed.

  15. Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO{sub x}/insulator structures from the results of synchrotron investigations

    Energy Technology Data Exchange (ETDEWEB)

    Turishchev, S. Yu., E-mail: tsu@phys.vsu.ru; Terekhov, V. A.; Koyuda, D. A. [Voronezh State University (Russian Federation); Ershov, A. V.; Mashin, A. I. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Parinova, E. V.; Nesterov, D. N. [Voronezh State University (Russian Federation); Grachev, D. A.; Karabanova, I. A. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Domashevskaya, E. P. [Voronezh State University (Russian Federation)

    2017-03-15

    The problem of the efficiency of the controllable formation of arrays of silicon nanoparticles is studied on the basis of detailed investigations of the electronic structure of multilayer nanoperiodic a-SiO{sub x}/SiO{sub 2}, a-SiO{sub x}/Al{sub 2}O{sub 3}, and a-SiO{sub x}/ZrO{sub 2} compounds. Using synchrotron radiation and the X-ray absorption near edge structure (XANES) spectroscopy technique, a modification is revealed for the investigated structures under the effect of high-temperature annealing at the highest temperature of 1100°C; this modification is attributed to the formation of silicon nanocrystals in the layers of photoluminescent multilayer structures.

  16. Comparative Study on Electronic, Emission, Spontaneous Property of Porous Silicon in Different Solvents

    Directory of Open Access Journals (Sweden)

    M. Naziruddin Khan

    2014-01-01

    Full Text Available Luminescent porous silicon (Psi fabricated by simple chemical etching technique in different organic solvents was studied. By quantifying the silicon wafer piece, optical properties of the Psi in solutions were investigated. Observation shows that no photoluminescence light of Psi in all solvents is emitted. Morphology of Psi in different solvents indicates that the structure and distribution of Psi are differently observed. Particles are uniformly dispersive with the sizes around more or less 5–8 nm. The crystallographic plane and high crystalline nature of Psi is observed by selected area diffraction (SED and XRD. Electronic properties of Psi in solutions are influenced due to the variation of quantity of wafer and nature of solvent. Influence in band gaps of Psi calculated by Tauc’s method is obtained due to change of absorption edge of Psi in solvents. PL intensities are observed to be depending on quantity of silicon wafer, etched cross-section area on wafer surface. Effects on emission peaks and bands of Psi under temperature annealing are observed. The spontaneous signals of Psi measured under high power Pico second laser 355 nm source are significant, influenced by the nature of solvent, pumped energy, and quantity of Si wafer piece used in etching process.

  17. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  18. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  19. Analysis about diamond tool wear in nano-metric cutting of single crystal silicon using molecular dynamics method

    Science.gov (United States)

    Wang, Zhiguo; Liang, Yingchun; Chen, Mingjun; Tong, Zhen; Chen, Jiaxuan

    2010-10-01

    Tool wear not only changes its geometry accuracy and integrity, but also decrease machining precision and surface integrity of workpiece that affect using performance and service life of workpiece in ultra-precision machining. Scholars made a lot of experimental researches and stimulant analyses, but there is a great difference on the wear mechanism, especially on the nano-scale wear mechanism. In this paper, the three-dimensional simulation model is built to simulate nano-metric cutting of a single crystal silicon with a non-rigid right-angle diamond tool with 0 rake angle and 0 clearance angle by the molecular dynamics (MD) simulation approach, which is used to investigate the diamond tool wear during the nano-metric cutting process. A Tersoff potential is employed for the interaction between carbon-carbon atoms, silicon-silicon atoms and carbon-silicon atoms. The tool gets the high alternating shear stress, the tool wear firstly presents at the cutting edge where intension is low. At the corner the tool is splitted along the {1 1 1} crystal plane, which forms the tipping. The wear at the flank face is the structure transformation of diamond that the diamond structure transforms into the sheet graphite structure. Owing to the tool wear the cutting force increases.

  20. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  1. Comparative Evaluations and Microstructure: Mechanical Property Relations of Sintered Silicon Carbide Consolidated by Various Techniques

    Science.gov (United States)

    Barick, Prasenjit; Chatterjee, Arya; Majumdar, Bhaskar; Saha, Bhaskar Prasad; Mitra, Rahul

    2018-04-01

    A comparative evaluation between pressureless or self-sintered silicon carbide (SSiC), hot-pressed silicon carbide (HP-SiC), and spark plasma-sintered silicon carbide (SPS-SiC) has been carried out with emphasis on examination of their microstructures and mechanical properties. The effect of sample dimensions on density and properties of SPS-SiC has been also examined. Elastic modulus, flexural strength, and fracture toughness measured by indentation or testing of single-edge notched beam specimens have been found to follow the following trend, HP-SiC > SSiC > SPS-SiC. The SPS-SiC samples have shown size-dependent densification and mechanical properties, with the smaller sample exhibiting superior properties. The mechanical properties of sintered SiC samples appear to be influenced by relative density, grain size, and morphology, as well as the existence of intergranular glassy phase. Studies of fracture surface morphologies have revealed the mechanism of failure to be transgranular in SSiC or HP-SiC, and intergranular in case of SPS-SiC, indicating the dominating influence of grain size and α-SiC formation with high aspect ratio.

  2. Production of technical silicon and silicon carbide from rice-husk

    Directory of Open Access Journals (Sweden)

    A. Z. Issagulov

    2014-10-01

    Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

  3. Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

    International Nuclear Information System (INIS)

    Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

    2012-01-01

    Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

  4. Development of edge effects around experimental ecosystem hotspots is affected by edge density and matrix type

    Science.gov (United States)

    Ecological edge effects are sensitive to landscape context. In particular, edge effects can be altered by matrix type and by the presence of other nearby edges. We experimentally altered patch configurations in an African savanna to determine how edge density and matrix type influence edge effect de...

  5. Edge effects in composites

    International Nuclear Information System (INIS)

    Guz, A.N.; Kokhanenko, Yu.V.

    1995-01-01

    In the present article we survey papers on edge effects investigated by the rigorous approach. We interpret edge effects as stressed states created in a composite as a result of zones in which the stresses exhibit a rapidly changing behavior in comparison with the slow variation of the stresses outside such zones. Here the range of the edge effect is defined as the distance from the point of its inception to the boundary of the edge zone in a given direction. The transition of the stresses to the slowly varying state is determined within prescribed error limits. The size and configuration of the edge zone depends on the tolerated error. Clearly, the main difficulty associated with the rigorous approach is finding solutions of the elasticity problems. The finite-difference approach is suggested for the approximate solution of these problems. In light of the comparative time consumption of the finite-difference approach, it is best directed at certain classes of problems rather than at particular individual problems. Not too many papers on the investigation of edge effects by the rigorous approach have been published to date. Below, following in their footsteps, we formulate edge effect problems in composites, determine classes of problems, and investigate edge effects in composite materials and structural elements using them in Cartesian (planar and three-dimensional problems) and cylindrical (axisymmetric problems) coordinate frames. We note that the division of approaches to the study of edge effects into qualitative (nonrigorous) and quantitative (rigorous) reflects the authors own point of view. Of course, other schemes of classification of the approaches to the investigation of the regions of rapidly varying states in composites are possible

  6. Detection of carbon dioxide in the gases evolved during the hot extraction determination of hydrogen in uranium ingots

    International Nuclear Information System (INIS)

    Jursik, M.L.; Pope, J.D.

    1977-08-01

    The hot extraction method was used at the National Lead Company of Ohio to determine hydrogen in uranium metal at the 2 ppM level. The volume of gas evolved from the heated sample was assumed to be hydrogen. When a liquid nitrogen trap was placed into the system the hydrogen values were reduced 5 to 10%. The gas retained by the nitrogen trap was identified by mass spectrometry as predominantly carbon dioxide. Low hydrogen values were observed only when the nitrogen trap was used in the analysis of high-carbon (300 to 600 ppM) uranium from NLO production ingots. However, hydrogen values for low-carbon (30 to 50 ppM) uranium were unaffected by the nitrogen trap. The formation of carbon dioxide appears to be associated with the carbon content of the uranium metal. Comparisons of hydrogen values obtained with the hot extraction method and with an inert fusion--thermal conductivity method are also presented. 3 tables, 4 figures

  7. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  8. Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

    Science.gov (United States)

    Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

    2014-04-01

    Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

  9. Optically Unraveling the Edge Chirality-Dependent Band Structure and Plasmon Damping in Graphene Edges.

    Science.gov (United States)

    Duan, Jiahua; Chen, Runkun; Cheng, Yuan; Yang, Tianzhong; Zhai, Feng; Dai, Qing; Chen, Jianing

    2018-05-01

    The nontrivial topological origin and pseudospinorial character of electron wavefunctions make edge states possess unusual electronic properties. Twenty years ago, the tight-binding model calculation predicted that zigzag termination of 2D sheets of carbon atoms have peculiar edge states, which show potential application in spintronics and modern information technologies. Although scanning probe microscopy is employed to capture this phenomenon, the experimental demonstration of its optical response remains challenging. Here, the propagating graphene plasmon provides an edge-selective polaritonic probe to directly detect and control the electronic edge state at ambient condition. Compared with armchair, the edge-band structure in the bandgap gives rise to additional optical absorption and strongly absorbed rim at zigzag edge. Furthermore, the optical conductivity is reconstructed and the anisotropic plasmon damping in graphene systems is revealed. The reported approach paves the way for detecting edge-specific phenomena in other van der Waals materials and topological insulators. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

    International Nuclear Information System (INIS)

    Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

    2012-01-01

    In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

  11. A Tie-Over Dressing Using a Silicone Tube to Graft Deep Wounds

    Directory of Open Access Journals (Sweden)

    Cem Inan Bektas

    2013-11-01

    Full Text Available BackgroundThe most common cause of skin graft failure is the collection of blood or serous fluid underneath the graft. In our study, we describe the use of silicone tube for tie-over dressing to secure the skin graft margins with the aim of decreasing loss of the skin graft, particularly in grafting of deep wounds.MethodsBetween March 2008 and July 2011, we used this technique in 17 patients with skin defects with depths ranging from 3.5 to 8 mm (mean, 5.5 mm. First, the skin graft was sutured with 3/0 silk suture material from its corners. Then, a silicone round drain tube was sutured with 3/0 absorbable polyglactin 910 over the margins of the graft. Finally, long silk threads were tied over the bolus dressing, and the tie-over dressing was completed in the usual fashion.ResultsThe mean follow-up was 7 months (range, 2-10 months in the outpatient clinic. Graft loss on the graft margins due to hematoma or seroma was not developed. The results of adhesion between the graft and wound bed peripherally was excellent.ConclusionsIn our study, we suggest that use of a silicone tube for additional pressure on the edges of skin grafts in case of reconstruction of deep skin defects.

  12. Release of low molecular weight silicones and platinum from silicone breast implants.

    Science.gov (United States)

    Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

    1997-12-01

    We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

  13. Prevention and control of proliferative vitreoretinopathy: primary retinal detachment surgery using silicone oil as a planned two-stage procedure in high-risk cases.

    Science.gov (United States)

    Alexander, P; Prasad, R; Ang, A; Poulson, A V; Scott, J D; Snead, M P

    2008-06-01

    For rhegmatogenous retinal detachment, reattachment with a single procedure is associated with better visual outcomes. In the past, silicone oil has been used mostly as a last resort following failed primary surgery. This study evaluates a novel approach to patients at high risk of primary failure, using silicone tamponade as the primary stage of a planned two-stage procedure. We report a series of 140 eyes that underwent primary surgery for rhegmatogenous retinal detachment. Patients at higher risk of surgical failure (eg giant retinal tear, inability to posture, poor view, uncertainty of location of primary break, primary proliferative vitreoretinopathy (PVR), multiple tears with rolled posterior edges, retinoschisis/detachment, staphyloma with macular hole) were managed by a planned staged procedure using primary silicone oil tamponade. This was followed by silicone removal at a later date. Fifty-four eyes underwent scleral buckling alone, with primary success in 52/54 (96%). Fifty-three eyes underwent vitrectomy and gas, achieving primary success in 50/53 (94%). Thirty-three eyes were classified high risk and managed with primary silicone. Silicone was safely removed in 22/25. In eight eyes, silicone was retained without attempt at removal. In total, primary retinal reattachment was achieved in 128 of 140 eyes (91.4%). Of these, 124 (97%) did not require long-term tamponade. Only four eyes (2.9%) developed PVR. A planned two-stage approach to highrisk cases of retinal detachment using primary silicone oil tamponade followed by silicone removal can achieve a high primary reattachment rate with less than 3% incidence of PVR.

  14. Light emitting structures porous silicon-silicon substrate

    International Nuclear Information System (INIS)

    Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

    1999-01-01

    The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

  15. Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

    International Nuclear Information System (INIS)

    Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

    2000-01-01

    In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

  16. Infective endocarditis following transcatheter edge-to-edge mitral valve repair: A systematic review.

    Science.gov (United States)

    Asmarats, Lluis; Rodriguez-Gabella, Tania; Chamandi, Chekrallah; Bernier, Mathieu; Beaudoin, Jonathan; O'Connor, Kim; Dumont, Eric; Dagenais, François; Paradis, Jean-Michel; Rodés-Cabau, Josep

    2018-05-10

    To assess the clinical characteristics, management, and outcomes of patients diagnosed with infective endocarditis (IE) after edge-to-edge mitral valve repair with the MitraClip device. Transcatheter edge-to-edge mitral valve repair has emerged as an alternative to surgery in high-risk patients. However, few data exist on IE following transcatheter mitral procedures. Four electronic databases (PubMed, Google Scholar, Embase, and Cochrane Library) were searched for original published studies on IE after edge-to-edge transcatheter mitral valve repair from 2003 to 2017. A total of 10 publications describing 12 patients with definitive IE (median age 76 years, 55% men) were found. The mean logistic EuroSCORE/EuroSCORE II were 41% and 45%, respectively. The IE episode occurred early (within 12 months post-procedure) in nine patients (75%; within the first month in five patients). Staphylococcus aureus was the most frequent (60%) causal microorganism, and severe mitral regurgitation was present in all cases but one. Surgical mitral valve replacement (SMVR) was performed in most (67%) patients, and the mortality associated with the IE episode was high (42%). IE following transcatheter edge-to-edge mitral valve repair is a rare but life-threatening complication, usually necessitating SMVR despite the high-risk profile of the patients. These results highlight the importance of adequate preventive measures and a prompt diagnosis and treatment of this serious complication. © 2018 Wiley Periodicals, Inc.

  17. Microstructure and textural characterization of hot extruded Zr-2.5Nb alloy PHWR pressure tube fabricated by various ingot processing route

    International Nuclear Information System (INIS)

    Vaibhaw, Kumar; Jha, S.K.; Saibaba, N.; Neogy, S.; Mani Krishna, K.V.; Srivastava, D.; Dey, G.K.

    2011-01-01

    Zr-2.5 Nb alloys finds its applications as a pressure tube component in pressure tube type thermal reactors such as PHWRs and RBMK due to properties attributed such as low neutron absorption cross section, high temperature strength and corrosion resistance etc. Manufacturing of this life time components involves series of thermo-mechanical processes of hot working and cold working with intermediate annealing. The life time of Pressure tube are limited due to their diametral creep properties which is governed by metallurgical characteristics such as texture, microstructure dislocation density etc. The primary breakdown of cast structure in Vacuum Arc Melted ingot can be effected by either hot extrusion or forging in single or multiple stages before final hot extrusion step into the blank for manufacturing of seamless pressure tube. Elevated temperature deformation carried out in hot working above the recrystallization temperature would enable impositions of large strains in single step. This deformation causes a significant change in the microstructure of the material and depends on process parameters such as extrusion ratio, temperature and strain rate. Basic microstructure developed at this deformation stage has significant bearing on the final properties of the material fabricated with subsequent cold working steps. The major texture in α+β Zr-2.5 Nb alloy is established during final extrusion to blank which does not change significantly during subsequent cold pilgering. However, microstructure is modified significantly in subsequent cold working which can be effected by cold pilgering or cold drawing in single or multiple steps. Present paper brings out the various ingot processing routes using forging and or extrusion followed for fabrication of pressure tubes. The development of texture and microstructures has been discussed at the blank stage from these processing routes and also with respect to varying extrusion variable such as extrusion ratio

  18. Nonreference Medical Image Edge Map Measure

    Directory of Open Access Journals (Sweden)

    Karen Panetta

    2014-01-01

    Full Text Available Edge detection is a key step in medical image processing. It is widely used to extract features, perform segmentation, and further assist in diagnosis. A poor quality edge map can result in false alarms and misses in cancer detection algorithms. Therefore, it is necessary to have a reliable edge measure to assist in selecting the optimal edge map. Existing reference based edge measures require a ground truth edge map to evaluate the similarity between the generated edge map and the ground truth. However, the ground truth images are not available for medical images. Therefore, a nonreference edge measure is ideal for medical image processing applications. In this paper, a nonreference reconstruction based edge map evaluation (NREM is proposed. The theoretical basis is that a good edge map keeps the structure and details of the original image thus would yield a good reconstructed image. The NREM is based on comparing the similarity between the reconstructed image with the original image using this concept. The edge measure is used for selecting the optimal edge detection algorithm and optimal parameters for the algorithm. Experimental results show that the quantitative evaluations given by the edge measure have good correlations with human visual analysis.

  19. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  20. Influence of radiation-induced segregation on ductility of a nickel-silicon alloy

    International Nuclear Information System (INIS)

    Packan, N.H.; Schroeder, H.; Kesternich, W.

    1986-01-01

    Flat tensile specimens 60 μm thick of Ni-8 at. % Si were irradiated to bulk damage levels of 0.1 to 0.3 dpa with either 7 MeV protons or 28 MeV alpha particles at 750 K. The alpha bombarded specimens incurred 750 at. ppM He per 0.1 dpa in the course of their damage-generating irradiation. Radiation-induced silicon segregation gave rise to Ni 3 Si layers at internal and external surfaces. Postirradiation tensile tests conducted either at 300 K or 720 K revealed fully ductile (chisel-edged) transgranular fracture profiles. There were no significant differences between the proton-bombarded specimens and the unbombarded controls, both exhibiting >25% total elongations, while the alpha-bombarded specimens showed ductile fractures with somewhat lower (17 to 18%) elongation values probably due to hardening caused by small helium bubbles. Certain specimens that were preimplanted with 250 to 1000 at. ppM He at 970 K to encourage intergranular failure and expose grain boundaries did fail intergranularly. It is concluded that radiation-induced silicon segregation does not cause intrinsic embrittlement

  1. FTIR studies of swift silicon and oxygen ion irradiated porous silicon

    International Nuclear Information System (INIS)

    Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

    1999-01-01

    Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

  2. Edge responses are different in edges under natural versus anthropogenic influence: a meta-analysis using ground beetles.

    Science.gov (United States)

    Magura, Tibor; Lövei, Gábor L; Tóthmérész, Béla

    2017-02-01

    Most edges are anthropogenic in origin, but are distinguishable by their maintaining processes (natural vs. continued anthropogenic interventions: forestry, agriculture, urbanization). We hypothesized that the dissimilar edge histories will be reflected in the diversity and assemblage composition of inhabitants. Testing this "history-based edge effect" hypothesis, we evaluated published information on a common insect group, ground beetles (Coleoptera: Carabidae) in forest edges. A meta-analysis showed that the diversity-enhancing properties of edges significantly differed according to their history. Forest edges maintained by natural processes had significantly higher species richness than their interiors, while edges with continued anthropogenic influence did not. The filter function of edges was also essentially different depending on their history. For forest specialist species, edges maintained by natural processes were penetrable, allowing these species to move right through the edges, while edges still under anthropogenic interventions were impenetrable, preventing the dispersal of forest specialists out of the forest. For species inhabiting the surrounding matrix (open-habitat and generalist species), edges created by forestry activities were penetrable, and such species also invaded the forest interior. However, natural forest edges constituted a barrier and prevented the invasion of matrix species into the forest interior. Preserving and protecting all edges maintained by natural processes, and preventing anthropogenic changes to their structure, composition, and characteristics are key factors to sustain biodiversity in forests. Moreover, the increasing presence of anthropogenic edges in a landscape is to be avoided, as they contribute to the loss of biodiversity. Simultaneously, edges under continued anthropogenic disturbance should be restored by increasing habitat heterogeneity.

  3. Study of shape evaluation for mask and silicon using large field of view

    Science.gov (United States)

    Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

    2010-09-01

    We have developed a highly integrated method of mask and silicon metrology. The aim of this integration is evaluating the performance of the silicon corresponding to Hotspot on a mask. It can use the mask shape of a large field, besides. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and mask manufacture, and this has a big impact on the semiconductor market that centers on the mask business. As an optimal solution to these issues, we provide a DFM solution that extracts 2-dimensional data for a more realistic and error-free simulation by reproducing accurately the contour of the actual mask, in addition to the simulation results from the mask data. On the other hand, there is roughness in the silicon form made from a mass-production line. Moreover, there is variation in the silicon form. For this reason, quantification of silicon form is important, in order to estimate the performance of a pattern. In order to quantify, the same form is equalized in two dimensions. And the method of evaluating based on the form is popular. In this study, we conducted experiments for averaging method of the pattern (Measurement Based Contouring) as two-dimensional mask and silicon evaluation technique. That is, observation of the identical position of a mask and a silicon was considered. The result proved its detection accuracy and reliability of variability on two-dimensional pattern (mask and silicon) and is adaptable to following fields of mask quality management. •Discrimination of nuisance defects for fine pattern. •Determination of two-dimensional variability of

  4. Development and characterization of Al-Zn alloy by ingot metallurgy and powder metallurgy with improved mechanical properties

    International Nuclear Information System (INIS)

    Waseem, M.; Awais, H.B.; Zauha, M.S.; Tariq, N.H.

    2007-01-01

    Current project focuses on the production of AI-Zn alloy AA7075 used for wide range of applications like Aircraft components, missile and other structural applications. The above alloy was developed by two different routes. One was melting /casting, after which alloy was characterized by microstructural - examination (optical and SEM) and mechanical testing. Other route was the preparation of this alloy by powder metallurgy. This involves preparation of powders, mechanical alloying, compaction, sintering, rolling, solution treatment and aging then analysis. Powders of Aluminum, Zinc and powders of master alloys of AI-Cu, AI-Mg, AI-Mn, and AI-Cr were Mechanical alloyed. Then this powder was compacted by uniaxial press to form pellets. Sintering was carried out at 500 degree C and then hot rolled in Ar atmosphere. After solution and aging treatments samples were characterized. It is observed that there is about 12-21% improvement in mechanical properties such as tensile strength, yield strength, ductility and fracture toughness due to the more fine microstructure and less segregation than ingot metallurgy route. (author)

  5. Microstructure Evolution and Flow Stress Model of a 20Mn5 Hollow Steel Ingot during Hot Compression.

    Science.gov (United States)

    Liu, Min; Ma, Qing-Xian; Luo, Jian-Bin

    2018-03-21

    20Mn5 steel is widely used in the manufacture of heavy hydro-generator shaft due to its good performance of strength, toughness and wear resistance. However, the hot deformation and recrystallization behaviors of 20Mn5 steel compressed under high temperature were not studied. In this study, the hot compression experiments under temperatures of 850-1200 °C and strain rates of 0.01/s-1/s are conducted using Gleeble thermal and mechanical simulation machine. And the flow stress curves and microstructure after hot compression are obtained. Effects of temperature and strain rate on microstructure are analyzed. Based on the classical stress-dislocation relation and the kinetics of dynamic recrystallization, a two-stage constitutive model is developed to predict the flow stress of 20Mn5 steel. Comparisons between experimental flow stress and predicted flow stress show that the predicted flow stress values are in good agreement with the experimental flow stress values, which indicates that the proposed constitutive model is reliable and can be used for numerical simulation of hot forging of 20Mn5 hollow steel ingot.

  6. Nanoindentation near the edge

    Science.gov (United States)

    J.E. Jakes; C.R. Frihart; J.F. Beecher; R.J. Moon; P.J. Resto; Z.H. Melgarejo; O.M. Saurez; H. Baumgart; A.A. Elmustafa; D.S. Stone

    2009-01-01

    Whenever a nanoindent is placed near an edge, such as the free edge of the specimen or heterophase interface intersecting the surface, the elastic discontinuity associated with the edge produces artifacts in the load-depth data. Unless properly handled in the data analysis, the artifacts can produce spurious results that obscure any real trends in properties as...

  7. Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

    International Nuclear Information System (INIS)

    Chao, D.S.; Liang, J.H.

    2013-01-01

    Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

  8. Edge subdivision and edge multisubdivision versus some domination related parameters in generalized corona graphs

    Directory of Open Access Journals (Sweden)

    Magda Dettlaff

    2016-01-01

    Full Text Available Given a graph \\(G=(V,E\\, the subdivision of an edge \\(e=uv\\in E(G\\ means the substitution of the edge \\(e\\ by a vertex \\(x\\ and the new edges \\(ux\\ and \\(xv\\. The domination subdivision number of a graph \\(G\\ is the minimum number of edges of \\(G\\ which must be subdivided (where each edge can be subdivided at most once in order to increase the domination number. Also, the domination multisubdivision number of \\(G\\ is the minimum number of subdivisions which must be done in one edge such that the domination number increases. Moreover, the concepts of paired domination and independent domination subdivision (respectively multisubdivision numbers are defined similarly. In this paper we study the domination, paired domination and independent domination (subdivision and multisubdivision numbers of the generalized corona graphs.

  9. Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

    2016-01-01

    Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

  10. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  11. Influence of edge effects on single event upset susceptibility of SOI SRAMs

    International Nuclear Information System (INIS)

    Gu, Song; Liu, Jie; Zhao, Fazhan; Zhang, Zhangang; Bi, Jinshun; Geng, Chao; Hou, Mingdong; Liu, Gang; Liu, Tianqi; Xi, Kai

    2015-01-01

    An experimental investigation of the single event upset (SEU) susceptibility for heavy ions at tilted incidence was performed. The differences of SEU cross-sections between tilted incidence and normal incidence at equivalent effective linear energy transfer were 21% and 57% for the silicon-on-insulator (SOI) static random access memories (SRAMs) of 0.5 μm and 0.18 μm feature size, respectively. The difference of SEU cross-section raised dramatically with increasing tilt angle for SOI SRAM of deep-submicron technology. The result of CRÈME-MC simulation for tilted irradiation of the sensitive volume indicates that the energy deposition spectrum has a substantial tail extending into the low energy region. The experimental results show that the influence of edge effects on SEU susceptibility cannot be ignored in particular with device scaling down

  12. Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

    Directory of Open Access Journals (Sweden)

    Eugenijus SHATKOVSKIS

    2012-09-01

    Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

  13. Chiral silicon nanostructures

    International Nuclear Information System (INIS)

    Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

    2006-01-01

    Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

  14. Edge-TCT measurements on irradiated HV CMOS sensors

    CERN Document Server

    Weisser, Constantin

    2014-01-01

    Passive $100 \\times 100 \\,\\mu$m test diodes in an unirradiated and an irradiated HV2FEI4v3 HV-CMOS silicon sensor were analysed using the edge TCT technique. To integrate the sensor into the setup a PCB was designed to extract the signals, a cooling mechanism was constructed and the system housed in a shielding box. The observed signal had fast and slow contributions, that were interpreted as drift and diffusion. The former peaked in a region, that was interpreted as the depletion region, while the latter peaked further in the bulk material. Raising the bias voltage increased the depth of the former region, while pushing the latter region further into the bulk. The irradiated sample lost signal strength mainly in its slow part compared to the unirradiated sample, while its quick signal remained largely unaffected. As only the signal interpreted as drift is fast enough to be useful in LHC operation the investigated sensors could be considered radiation hard for this purpose. This gives further promise to ...

  15. On numerical modeling of low-head direct chill ingot caster for magnesium alloy AZ31

    Directory of Open Access Journals (Sweden)

    Mainul Hasan

    2014-12-01

    Full Text Available A comprehensive 3D turbulent CFD study has been carried out to simulate a Low-Head (LH vertical Direct Chill (DC rolling ingot caster for the common magnesium alloy AZ31. The model used in this study takes into account the coupled laminar/turbulent melt flow and solidification aspects of the process and is based on the control-volume finite-difference approach. Following the aluminum/magnesium DC casting industrial practices, the LH mold is taken as 30 mm with a hot top of 60 mm. The previously verified in-house code has been modified to model the present casting process. Important quantitative results are obtained for four casting speeds, for three inlet melt pouring temperatures (superheats and for three metal-mold contact heat transfer coefficients for the steady state operational phase of the caster. The variable cooling water temperatures reported by the industry are considered for the primary and secondary cooling zones during the simulations. Specifically, the temperature and velocity fields, sump depth and sump profiles, mushy region thickness, solid shell thickness at the exit of the mold and axial temperature profiles at the center and at three strategic locations at the surface of the slab are presented and discussed.

  16. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  17. 3D silicon pixel detectors for the ATLAS Forward Physics experiment

    International Nuclear Information System (INIS)

    Lange, J.; Cavallaro, E.; Grinstein, S.; Paz, I. López

    2015-01-01

    The ATLAS Forward Physics (AFP) project plans to install 3D silicon pixel detectors about 210 m away from the interaction point and very close to the beamline (2–3 mm). This implies the need of slim edges of about 100–200 μm width for the sensor side facing the beam to minimise the dead area. Another challenge is an expected non-uniform irradiation of the pixel sensors. It is studied if these requirements can be met using slightly-modified FE-I4 3D pixel sensors from the ATLAS Insertable B-Layer production. AFP-compatible slim edges are obtained with a simple diamond-saw cut. Electrical characterisations and beam tests are carried out and no detrimental impact on the leakage current and hit efficiency is observed. For devices without a 3D guard ring a remaining insensitive edge of less than 15 μm width is found. Moreover, 3D detectors are non-uniformly irradiated up to fluences of several 10 15 n eq /cm 2 with either a focussed 23 GeV proton beam or a 23 MeV proton beam through holes in Al masks. The efficiency in the irradiated region is found to be similar to the one in the non-irradiated region and exceeds 97% in case of favourable chip-parameter settings. Only in a narrow transition area at the edge of the hole in the Al mask, a significantly lower efficiency is seen. A follow-up study of this effect using arrays of small pad diodes for position-resolved dosimetry via the leakage current is carried out

  18. Mortality after percutaneous edge-to-edge mitral valve repair: a contemporary review.

    Science.gov (United States)

    Kortlandt, Friso A; de Beenhouwer, Thomas; Swaans, Martin J; Post, Marco C; van der Heyden, Jan A S; Eefting, Frank D; Rensing, Benno J W M

    2016-04-01

    Percutaneous edge-to-edge mitral valve (MV) repair is a relatively new treatment option for mitral regurgitation (MR). After the feasibility and safety having been proved in low-surgical-risk patients, the use of this procedure has shifted more to the treatment of high-risk patients. With the absence of randomized controlled trials (RCT) for this particular subgroup, observational studies try to add evidence to the safety aspect of this procedure. These also provide short- and mid-term mortality figures. Several mortality predictors have been identified, which may help the optimal selection of patients who will benefit most from this technique. In this article we provide an overview of the literature about mortality and its predictors in patients treated with the percutaneous edge-to-edge device.

  19. Adobe Edge Preview 3

    CERN Document Server

    Grover, Chris

    2011-01-01

    Want to use an Adobe tool to design animated web graphics that work on iPhone and iPad? You've come to the right book. Adobe Edge Preview 3: The Missing Manual shows you how to build HTML5 graphics using simple visual tools. No programming experience? No problem. Adobe Edge writes the underlying code for you. With this eBook, you'll be designing great-looking web elements in no time. Get to know the workspace. Learn how Adobe Edge Preview 3 performs its magic.Create and import graphics. Make drawings with Edge's tools, or use art you designed in other programs.Work with text. Build menus, lab

  20. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    International Nuclear Information System (INIS)

    Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

    2015-01-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  1. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2015-10-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  2. Decade of PV Industry R and D Advances in Silicon Module Manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Symko-Davis, M.; Mitchell, R.L.; Witt, C.E.; Thomas, H.P. [National Renewable Energy Laboratory; King, R.[U.S. Department of Energy; Ruby, D.S. [Sandia National Laboratories

    2001-01-18

    The US Photovoltaic (PV) industry has made significant technical advances in crystalline silicon (Si) module manufacturing through the PV Manufacturing R and D Project during the past decade. Funded Si technologies in this project have been Czochralski, cast polycrystalline, edge-defined film-fed growth (EFG) ribbon, string ribbon, and Si-film. Specific R and D Si module-manufacturing categories that have shown technical growth and will be discussed are in crystal growth and processing, wafering, cell fabrication, and module manufacturing. These R and D advancements since 1992 have contributed to a 30% decrease in PV manufacturing costs and stimulated a sevenfold increase in PV production capacity.

  3. Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

    International Nuclear Information System (INIS)

    Bhoraskar, V.N.

    2001-01-01

    The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

  4. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  5. Design and development of PCD micro straight edge end mills for micro/nano machining of hard and brittle materials

    International Nuclear Information System (INIS)

    Cheng, Xiang; Wang, Zhigang; Yamazaki, Kazuo; Nakamoto, Kazuo

    2010-01-01

    One of the biggest challenges for mechanical micro/nano milling is the design and fabrication of high precision and high efficiency micro milling tools. Commercially available micro milling tools are either too expensive (around several hundred US dollars) or simply made from downsizing of macro milling tools, which is sometimes not appropriate for the specific micro/nano milling requirements. So the design and fabrication of custom micro milling tools are necessary. In this paper, a micro straight edge endmill (SEE) is designed. Static and dynamic FEM analyses have been done for the SEEs with different rake angles trying to identify their stiffness and natural frequencies. By wire electrical discharge machining (WEDM), the SEEs made of polycrystalline diamond (PCD) with three different rake angles have been fabricated. The evaluation milling on tungsten carbide (WC) and silicon wafer have processed on a nano milling center. Experimental results show the SEEs have a good ability to simultaneously micro/nano milling of both the side and bottom surfaces with submicron surface roughness, and the SEE has high accuracy for large aspect ratio thin wall machining. The milling experiments on silicon wafer have successfully demonstrated that ductile mode machining was achieved and the coolant played an important role in silicon wafer milling

  6. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  7. A convenient way of manufacturing silicon nanotubes on a silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Changchang; Cheng, Heming; Liu, Xiang, E-mail: liuxiang@ahut.edu.cn

    2016-07-01

    A convenient approach of preparing silicon nanotubes (SiNTs) on a silicon substrate is described in this work in detail. Firstly, a porous silicon (PSi) slice is prepared by a galvanic displacement reaction. Then it is put into aqueous solutions of 20% (w%) ammonium fluoride and 2.5 mM cobalt nitrate for a predetermined time. The cobalt ions are reduced and the resulted cobalt particles are deposited on the PSi slice. After the cobalt particles are removed with 5 M nitric acid a plenty of SiNTs come out and exhibit disorderly on the silicon substrate, which are illustrated by scanning electron microscopy (SEM). The compositions of the SiNTs are examined by energy-dispersive X-ray spectroscopy. Based on the SEM images, a suggested mechanism is put forward to explain the generation of the SiNTs on the PSi substrate. - Highlights: • A facile approach of preparing silicon nano tubes was invented. • The experimental results demonstrated the strong reducibility of Si-H{sub x} species. • It provided a new way of manufacturing silicon-contained hybrids.

  8. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija

    2012-01-01

    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  9. Generalized Multi-Edge Analysis for K-Edge Densitometry

    International Nuclear Information System (INIS)

    Collins, M.

    1998-01-01

    In K-edge densitometry (KED), a continuous-energy x-ray beam is transmitted through a liquid sample. The actinide content of the sample can be measured through analysis of the transmitted portion of the x-ray beam. Traditional methods for KED analysis allow the simultaneous calculation of, at most, two actinide concentrations. A generalized multi-edge KED analytical method is presented, allowing up to six actinide concentrations to be calculated simultaneously. Applications of this method for hybrid KED/x-ray fluorescence (HKED) systems are discussed. Current HKED systems require the operator to know the approximate actinide content of each sample, and manually select the proper analysis mode. The new multi-edge KED technique allows rapid identification of the major actinide components in a sample, independent of actinide content. The proper HKED analysis mode can be selected automatically, without requiring sample content information from the user. Automatic HKED analysis would be especially useful in an analytical laboratory setting, where samples with truly unknown characteristics are encountered. Because this technique requires no hardware modifications, several facilities that use HKED may eventually benefit from this approach

  10. Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

    International Nuclear Information System (INIS)

    Terzo, S; Macchiolo, A; Nisius, R; Paschen, B

    2014-01-01

    Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 μm, produced at CiS, and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The performance of the different sensor thicknesses and edge designs are compared before and after irradiation up to a fluence of 1.4 × 10 16 n eq /cm 2

  11. Reduced Moment-Based Models for Oxygen Precipitates and Dislocation Loops in Silicon

    Science.gov (United States)

    Trzynadlowski, Bart

    code for both models is included. A moment-based model for dislocation loop formation from {311} defects in ion-implanted silicon was also developed and validated against experimental data. Ab initio density functional theory calculations of stacking faults and edge dislocations were performed to extract energies and elastic properties. This allowed the effect of applied stress on the evolution of {311} defects and dislocation loops to be investigated.

  12. Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

    Science.gov (United States)

    Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

    2018-01-01

    The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

  13. Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

    Science.gov (United States)

    Rohatgi, A.; Meier, D. L.; Rai-Choudhury, P.; Fonash, S. J.; Singh, R.

    1986-01-01

    The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

  14. Canopy gap edge determination and the importance of gap edges for plant diversity

    Directory of Open Access Journals (Sweden)

    D. Salvador-Van Eysenrode

    2002-01-01

    Full Text Available Canopy gaps, i.e. openings in the forest cover caused by the fall of structural elements, are considered to be important for the maintenance of diversity and for the forest cycle. A gap can be considered as a young forest patch in the forest matrix, composed of interior surrounded by an edge, both enclosed by a perimeter. Much of the attention has been focused on the gap interior. However, at gap edges the spectrum of regeneration opportunities for plants may be larger than in the interior. Although definitions of gap are still discussed, any definition can describe it in an acceptable way, if justified, but defining edges is complicated and appropriate descriptors should be used. A method to determine gap interior and edge, using light as a descriptor, is presented with an example of gaps from a beech forest (Fagus sylvatica in Belgium. Also, the relevance and implications of gap edges for plant diversity and calculation of forest turnover is discussed.

  15. CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

    Directory of Open Access Journals (Sweden)

    V. А. Pilipenko

    2017-01-01

    Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

  16. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  17. The Edge supersonic transport

    Science.gov (United States)

    Agosta, Roxana; Bilbija, Dushan; Deutsch, Marc; Gallant, David; Rose, Don; Shreve, Gene; Smario, David; Suffredini, Brian

    1992-01-01

    As intercontinental business and tourism volumes continue their rapid expansion, the need to reduce travel times becomes increasingly acute. The Edge Supersonic Transport Aircraft is designed to meet this demand by the year 2015. With a maximum range of 5750 nm, a payload of 294 passengers and a cruising speed of M = 2.4, The Edge will cut current international flight durations in half, while maintaining competitive first class, business class, and economy class comfort levels. Moreover, this transport will render a minimal impact upon the environment, and will meet all Federal Aviation Administration Part 36, Stage III noise requirements. The cornerstone of The Edge's superior flight performance is its aerodynamically efficient, dual-configuration design incorporating variable-geometry wingtips. This arrangement combines the benefits of a high aspect ratio wing at takeoff and low cruising speeds with the high performance of an arrow-wing in supersonic cruise. And while the structural weight concerns relating to swinging wingtips are substantial, The Edge looks to ever-advancing material technologies to further increase its viability. Heeding well the lessons of the past, The Edge design holds economic feasibility as its primary focus. Therefore, in addition to its inherently superior aerodynamic performance, The Edge uses a lightweight, largely windowless configuration, relying on a synthetic vision system for outside viewing by both pilot and passengers. Additionally, a fly-by-light flight control system is incorporated to address aircraft supersonic cruise instability. The Edge will be produced at an estimated volume of 400 aircraft and will be offered to airlines in 2015 at $167 million per transport (1992 dollars).

  18. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    Science.gov (United States)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  19. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

    2016-07-04

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  20. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level