WorldWideScience

Sample records for silicon field emission

  1. The oxidized porous silicon field emission array

    International Nuclear Information System (INIS)

    Smith, D.D.; Demroff, H.P.; Elliott, T.S.; Kasprowicz, T.B.; Lee, B.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Trost, H.J.

    1993-01-01

    The goal of developing a highly efficient microwave power source has led the authors to investigate new methods of electron field emission. One method presently under consideration involves the use of oxidized porous silicon thin films. The authors have used this technology to fabricate the first working field emission arrays from this substance. This approach reduces the diameter of an individual emitter to the nanometer scale. Tests of the first samples are encouraging, with extracted electron currents to nearly 1 mA resulting from less than 20 V of pulsed DC gate voltage. Modulated emission at 5 MHz was also observed. Developments of a full-scale emission array capable of delivering an electron beam at 18 GHz of minimum density 100 A/cm 2 is in progress

  2. Silicon-based metallic micro grid for electron field emission

    International Nuclear Information System (INIS)

    Kim, Jaehong; Jeon, Seok-Gy; Kim, Jung-Il; Kim, Geun-Ju; Heo, Duchang; Shin, Dong Hoon; Sun, Yuning; Lee, Cheol Jin

    2012-01-01

    A micro-scale metal grid based on a silicon frame for application to electron field emission devices is introduced and experimentally demonstrated. A silicon lattice containing aperture holes with an area of 80 × 80 µm 2 and a thickness of 10 µm is precisely manufactured by dry etching the silicon on one side of a double-polished silicon wafer and by wet etching the opposite side. Because a silicon lattice is more rigid than a pure metal lattice, a thin layer of Au/Ti deposited on the silicon lattice for voltage application can be more resistant to the geometric stress caused by the applied electric field. The micro-fabrication process, the images of the fabricated grid with 88% geometric transparency and the surface profile measurement after thermal feasibility testing up to 700 °C are presented. (paper)

  3. Resonant tunnelling from nanometre-scale silicon field emission cathodes

    International Nuclear Information System (INIS)

    Johnson, S.; Markwitz, A.

    2005-01-01

    In this paper we report the field emission properties of self-assembled silicon nanostructures formed on an n-type silicon (100) substrate by electron beam annealing. The nanostructures are square based, with an average height of 8 nm and are distributed randomly over the entire substrate surface. Following conditioning, the silicon nanostructure field emission characteristics become stable and reproducible with electron emission occurring for fields as low as 3 Vμm-1. At higher fields, a superimposed on a background current well described by conventional Fowler-Nordheim theory. These current peaks are understood to result from enhanced tunnelling through resonant states formed at the substrate-nanostructure and nanostructure-vacuum interface. (author). 13 refs., 3 figs

  4. Silicon microelectronic field-emissive devices for advanced display technology

    Science.gov (United States)

    Morse, J. D.

    1993-03-01

    Field-emission displays (FED's) offer the potential advantages of high luminous efficiency, low power consumption, and low cost compared to AMLCD or CRT technologies. An LLNL team has developed silicon-point field emitters for vacuum triode structures and has also used thin-film processing techniques to demonstrate planar edge-emitter configurations. LLNL is interested in contributing its experience in this and other FED-related technologies to collaborations for commercial FED development. At LLNL, FED development is supported by computational capabilities in charge transport and surface/interface modeling in order to develop smaller, low-work-function field emitters using a variety of materials and coatings. Thin-film processing, microfabrication, and diagnostic/test labs permit experimental exploration of emitter and resistor structures. High field standoff technology is an area of long-standing expertise that guides development of low-cost spacers for FEDS. Vacuum sealing facilities are available to complete the FED production engineering process. Drivers constitute a significant fraction of the cost of any flat-panel display. LLNL has an advanced packaging group that can provide chip-on-glass technologies and three-dimensional interconnect generation permitting driver placement on either the front or the back of the display substrate.

  5. High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

    Science.gov (United States)

    Cui, Yunkang; Chen, Jing; Di, Yunsong; Zhang, Xiaobing; Lei, Wei

    2017-12-01

    In this paper, a facile method to fabricate the flexible field emission devices (FEDs) based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED) and energy dispersive X-ray spectrometer (EDX), while the morphology was revealed by field emission scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The results showed that the SiC nanowires grew along the [111] direction with the diameter of ˜110 nm and length of˜30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (˜0.95 V/μm) and threshold field (˜3.26 V/μm), and the high field enhancement factor (β=4670). It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.

  6. High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

    Directory of Open Access Journals (Sweden)

    Yunkang Cui

    2017-12-01

    Full Text Available In this paper, a facile method to fabricate the flexible field emission devices (FEDs based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD, selected area electron diffraction (SAED and energy dispersive X-ray spectrometer (EDX, while the morphology was revealed by field emission scanning electron microscopy (SEM and high resolution transmission electron microscopy (HRTEM. The results showed that the SiC nanowires grew along the [111] direction with the diameter of ∼110 nm and length of∼30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (∼0.95 V/μm and threshold field (∼3.26 V/μm, and the high field enhancement factor (β=4670. It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.

  7. Laser annealed HWCVD and PECVD thin silicon films. Electron field emission

    International Nuclear Information System (INIS)

    O'Neill, K.A.; Shaikh, M.Z.; Lyttle, G.; Anthony, S.; Fan, Y.C.; Persheyev, S.K.; Rose, M.J.

    2006-01-01

    Electron Field Emission (FE) properties of various laser annealed thin silicon films on different substrates were investigated. HWCVD microcrystalline and PECVD amorphous silicon films were irradiated with Nd : YAG and XeCl Excimer lasers at varying energy densities. Encouraging FE results were mainly from XeCl Excimer laser processed PECVD and HWCVD films on metal backplanes. FE measurements were complemented by the study of film surface morphology. Geometric field enhancement factors from surface measurements and Fowler-Nordheim Theory (FNT) were compared. FE properties of the films were also found to be particularly influenced by the backplane material

  8. Structure and field emission of graphene layers on top of silicon nanowire arrays

    International Nuclear Information System (INIS)

    Huang, Bohr-Ran; Chan, Hui-Wen; Jou, Shyankay; Chen, Guan-Yu; Kuo, Hsiu-An; Song, Wan-Jhen

    2016-01-01

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  9. Structure and field emission of graphene layers on top of silicon nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Bohr-Ran; Chan, Hui-Wen [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Jou, Shyankay, E-mail: sjou@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Chen, Guan-Yu [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Kuo, Hsiu-An; Song, Wan-Jhen [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

    2016-01-30

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  10. Patterned growth of carbon nanotubes over vertically aligned silicon nanowire bundles for achieving uniform field emission.

    Science.gov (United States)

    Hung, Yung-Jr; Huang, Yung-Jui; Chang, Hsuan-Chen; Lee, Kuei-Yi; Lee, San-Liang

    2014-01-01

    A fabrication strategy is proposed to enable precise coverage of as-grown carbon nanotube (CNT) mats atop vertically aligned silicon nanowire (VA-SiNW) bundles in order to realize a uniform bundle array of CNT-SiNW heterojunctions over a large sample area. No obvious electrical degradation of as-fabricated SiNWs is observed according to the measured current-voltage characteristic of a two-terminal single-nanowire device. Bundle arrangement of CNT-SiNW heterojunctions is optimized to relax the electrostatic screening effect and to maximize the field enhancement factor. As a result, superior field emission performance and relatively stable emission current over 12 h is obtained. A bright and uniform fluorescent radiation is observed from CNT-SiNW-based field emitters regardless of its bundle periodicity, verifying the existence of high-density and efficient field emitters on the proposed CNT-SiNW bundle arrays.

  11. Morphology dependent field emission characteristics of ZnS/silicon nanoporous pillar array

    Science.gov (United States)

    Wang, Ling Li; Zhao, Cheng Zhou; Kang, Li Ping; Liu, De Wei; Zhao, Hui Chun; Hao, Shan Peng; Zhang, Yuan Kai; Chen, Zhen Ping; Li, Xin Jian

    2016-10-01

    Through depositing zinc sulphide (ZnS) nanoparticals on silicon nanoporous pillar array (Si-NPA) and crater-shaped silicon nanoporous pillar array (c-Si-NPA) by chemical bath deposition (CBD) method, ZnS/Si-NPA and c-ZnS/Si-NPA were prepared and the field emission (FE) properties of them were investigated. The turn-on electric fields of were 3.8 V/mm for ZnS/Si-NPA and 5.0 V/mm for c-ZnS/Si-NPA, respectively. The lower turn-on electric fields of ZnS/Si-NPA than that of c-ZnS/Si-NPA were attributed to the different electric distribution of the field emitters causing by the different surface morphology of the two samples, which was further demonstrated via the simulated results by finite element modeling. The FN curves for the ZnS/Si-NPA showed two-slope behavior. All the results indicate that the morphology play an important role in the FE properties and designing an appropriate top morphology for the emitter is a very efficient way to improve the FE performance.

  12. Evaluation Of Silicon Diodes As IN-SITU Cryogenic Field Emission Detectors For SRF Cavity Development

    International Nuclear Information System (INIS)

    Palczewski, Ari; Geng, Rongli

    2012-01-01

    We performed in-situ cryogenic testing of four silicon diodes as possible candidates for field emission (FE) monitors of superconducting radio frequency (SRF) cavities during qualification testing and in accelerator cryo-modules. We evaluated diodes from 2 companies - from Hamamatsu corporation model S1223-01; and from OSI Optoelectronics models OSD35-LR-A, XUV-50C, and FIL-UV20. The measurements were done by placing the diodes in superfluid liquid helium near the top of a field emitting 9-cell cavity during its vertical test. For each diode, we will discuss their viability as a 2K cryogenic detector for FE mapping of SRF cavities and the directionality of S1223-01 in such environments. We will also present calibration curves between the diodes and JLab's standard radiation detector placed above the Dewar's top plate.

  13. Large-scale aligned silicon carbonitride nanotube arrays: Synthesis, characterization, and field emission property

    International Nuclear Information System (INIS)

    Liao, L.; Xu, Z.; Liu, K. H.; Wang, W. L.; Liu, S.; Bai, X. D.; Wang, E. G.; Li, J. C.; Liu, C.

    2007-01-01

    Large-scale aligned silicon carbonitride (SiCN) nanotube arrays have been synthesized by microwave-plasma-assisted chemical vapor deposition using SiH 4 , CH 4 , and N 2 as precursors. The three elements of Si, C, and N are chemically bonded with each other and the nanotube composition can be adjusted by varying the SiH 4 concentration, as revealed by electron energy loss spectroscopy and x-ray photoelectron spectroscopy. The evolution of microstructure of the SiCN nanotubes with different Si concentrations was characterized by high-resolution transmission electron microscopy and Raman spectroscopy. The dependence of field emission characteristics of the SiCN nanotubes on the composition has been investigated. With the increasing Si concentration, the SiCN nanotube exhibits more favorable oxidation resistance, which suggests that SiCN nanotube is a promising candidate as stable field emitter

  14. Relaxing the electrostatic screening effect by patterning vertically-aligned silicon nanowire arrays into bundles for field emission application

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Yung-Jr, E-mail: yungjrhung@gmail.com [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Department of Photonics, National Sun Yat-sen University, No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, San-Liang [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Beng, Looi Choon [Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chang, Hsuan-Chen [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Huang, Yung-Jui [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, Kuei-Yi; Huang, Ying-Sheng [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China)

    2014-04-01

    Top-down fabrication strategies are proposed and demonstrated to realize arrays of vertically-aligned silicon nanowire bundles and bundle arrays of carbon nanotube–silicon nanowire (CNT–SiNW) heterojunctions, aiming for releasing the electrostatic screening effect and improving the field emission characteristics. The trade-off between the reduction in the electrostatic screening effect and the decrease of emission sites leads to an optimal SiNW bundle arrangement which enables the lowest turn-on electric field of 1.4 V/μm and highest emission current density of 191 μA/cm{sup 2} among all testing SiNW samples. Benefiting from the superior thermal and electrical properties of CNTs and the flexible patterning technologies available for SiNWs, bundle arrays of CNT–SiNW heterojunctions show improved and highly-uniform field emission with a lower turn-on electric field of 0.9 V/μm and higher emission current density of 5.86 mA/cm{sup 2}. The application of these materials and their corresponding fabrication approaches is not limited to the field emission but can be used for a variety of emerging fields like nanoelectronics, lithium-ion batteries, and solar cells. - Highlights: • Aligned silicon nanowire (SiNW) bundle arrays are realized with top-down methods. • Growing carbon nanotubes atop SiNW bundle arrays enable uniform field emission. • A turn-on field of 0.9 V/μm and an emission current of > 5 mA/cm{sup 2} are achieved.

  15. Phonon-assisted field emission in silicon nanomembranes for time-of-flight mass spectrometry of proteins.

    Science.gov (United States)

    Park, Jonghoo; Aksamija, Zlatan; Shin, Hyun-Cheol; Kim, Hyunseok; Blick, Robert H

    2013-06-12

    Time-of-flight (TOF) mass spectrometry has been considered as the method of choice for mass analysis of large intact biomolecules, which are ionized in low charge states by matrix-assisted-laser-desorption/ionization (MALDI). However, it remains predominantly restricted to the mass analysis of biomolecules with a mass below about 50,000 Da. This limitation mainly stems from the fact that the sensitivity of the standard detectors decreases with increasing ion mass. We describe here a new principle for ion detection in TOF mass spectrometry, which is based upon suspended silicon nanomembranes. Impinging ion packets on one side of the suspended silicon nanomembrane generate nonequilibrium phonons, which propagate quasi-diffusively and deliver thermal energy to electrons within the silicon nanomembrane. This enhances electron emission from the nanomembrane surface with an electric field applied to it. The nonequilibrium phonon-assisted field emission in the suspended nanomembrane connected to an effective cooling of the nanomembrane via field emission allows mass analysis of megadalton ions with high mass resolution at room temperature. The high resolution of the detector will give better insight into high mass proteins and their functions.

  16. Low-macroscopic field emission from silicon-incorporated diamond-like carbon film synthesized by dc PECVD

    International Nuclear Information System (INIS)

    Ahmed, Sk.F.; Mitra, M.K.; Chattopadhyay, K.K.

    2007-01-01

    Silicon-incorporated diamond-like carbon (Si-DLC) films were deposited via dc plasma-enhanced chemical vapor deposition (PECVD), on glass and alumina substrates at a substrate temperature 300 deg. C. The precursor gas used was acetylene and for Si incorporation, tetraethyl orthosilicate dissolved in methanol was used. Si atomic percentage in the films was varied from 0% to 19.3% as measured from energy-dispersive X-ray analysis (EDX). The binding energies of C 1s, Si 2s and Si 2p were determined from X-ray photoelectron spectroscopic studies. We have observed low-macroscopic field electron emission from Si-DLC thin films deposited on glass substrates. The emission properties have been studied for a fixed anode-sample separation of 80 μm for different Si atomic percentages in the films. The turn-on field was also found to vary from 16.19 to 3.61 V/μm for a fixed anode-sample separation of 80 μm with a variation of silicon atomic percentage in the films 0% to 19.3%. The turn-on field and approximate work function are calculated and we have tried to explain the emission mechanism there from. It was found that the turn-on field and effective emission barrier were reduced by Si incorporation than undoped DLC

  17. Nanocrystalline silicon as the light emitting material of a field emission display device

    International Nuclear Information System (INIS)

    Biaggi-Labiosa, A; Sola, F; Resto, O; Fonseca, L F; Gonzalez-BerrIos, A; Jesus, J De; Morell, G

    2008-01-01

    A nanocrystalline Si-based paste was successfully tested as the light emitting material in a field emission display test device that employed a film of carbon nanofibers as the electron source. Stable emission in the 550-850 nm range was obtained at 16 V μm -1 . This relatively low field required for intense cathodoluminescence (CL) from the PSi paste may lead to longer term reliability of both the electron emitting and the light emitting materials, and to lower power consumption. Here we describe the synthesis, characterization, and analyses of the light emitting nanostructured Si paste and the electron emitting C nanofibers used for building the device, including x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The corresponding spectra and field emission curves are also shown and discussed

  18. Photoemission and photo-field-emission from photocathodes with arrays of silicon tips under continuous and pulsed lasers action

    International Nuclear Information System (INIS)

    Laguna, M.

    1995-11-01

    The electron machines's development and improvement go through the discovery of new electron sources of high brightness. After reminding the interests in studying silicon cathodes with array of tips as electron sources, I describe, in the three steps model, the main phenomenological features related to photoemission and photoemission and photo-field-emission from a semi-conductor. the experimental set-ups used for the measurements reported in chapter four, five and six are described in chapter three. In chapter three. In chapter four several aspects of photo-field-emission in continuous and nanosecond regimes, studied on the Clermont-Ferrand's test bench are tackled. We have measured quantum efficacies of 0.4 percent in the red (1.96 eV). Temporal responses in the nanoseconds range (10 ns) were observed with the Nd: YLF laser. With the laser impinging at an oblique angle we obtained ratios of photocurrent to dark current of the order of twenty. The issue of the high energy extracted photocurrent saturation is addressed and I give a preliminary explanation. In collaboration with the L.A.L. (Laboratoire de l'Accelerateur Lineaire) some tests with shortened pulsed laser beam (Nd: YAG laser 35 ps) were performed. Satisfactory response times have been obtained within the limitation of the scope (400 ps). (authors). 101 refs. 93 figs., 27 tabs., 3 photos., 1 append

  19. White light emission from engineered silicon carbide

    DEFF Research Database (Denmark)

    Ou, Haiyan

    Silicon carbide (SiC) is a wide indirect bandgap semiconductor. The light emission efficiency is low in nature. But this material has very unique physical properties like good thermal conductivity, high break down field etc in addition to its abundance. Therefore it is interesting to engineer its...... light emission property so that to take fully potential applications of this material. In this talk, two methods, i.e. doping SiC heavily by donor-acceptor pairs and making SiC porous are introduced to make light emission from SiC. By co-doping SiC with nitrogen and boron heavily, strong yellow emission...... is demonstrated. After optimizing the passivation conditions, strong blue-green emission from porous SiC is demonstrated as well. When combining the yellow emission from co-doped SiC and blue-green from porous SiC, a high color rendering index white light source is achieved....

  20. Field assisted photoemission by silicon photocathodes

    International Nuclear Information System (INIS)

    Aboubacar, A.; Dupont, M.; El Manouni, A.; Querrou, M.; Says, L.P.

    1991-01-01

    Silicon photocathodes with arrays of tips have been prepared using microlithographic techniques. Current emission due to field effect has been measured in the case of heavy and weakly doped boron Silicon. An Argon continuous laser has been used to produce photocurrent. An instantaneous current (600 μA) with a moderate laser power (83 mW), has been produced on weakly doped photocathodes. This current corresponds to an average quantum yield (purely photoelectric) of about 1.7%, and a local current density in the range of a few 10 6 A m -2

  1. Marshmallowing of nanopillar arrays by field emission

    International Nuclear Information System (INIS)

    Qin Hua; Kim, Hyun-Seok; Blick, Robert H.

    2010-01-01

    We fabricated nanoscale field electron emitters formed by highly-doped silicon nanopillars on a silicon membrane. Electron-beam induced deposition of carbon-based contaminants is employed as a probe of the spatial activity of electron emission from the nanopillars. In stark contrast to the general assumption that field emission only occurs at the tips of nanoscale emitters, we found strong emission from the sidewalls of the nanopillars. This is revealed by the deposition of carbon contaminants on these sidewalls, so that the nanopillars finally resemble marshmallows. We conclude that field emission from nanostructured surfaces is more intricate than previously expected.

  2. Marshmallowing of nanopillar arrays by field emission

    International Nuclear Information System (INIS)

    Park, J; Qin, H; Kim, H-S; Blick, R H

    2009-01-01

    We have fabricated mechanically flexible field electron emitters formed by highly-doped silicon nanopillars on a silicon membrane. Electron beam induced deposition of carbon-based contaminants is employed to probe the spatial activity of electron emission from the nanopillars. The experimental configuration provides a powerful tool to investigate the physics of the field electron emission (FEE). In contrast to the general assumption that field emission only occurs at the tips of nanoscale emitters, we found that the emission from the nanopillars' sidewalls is as strong as from their tips.

  3. Twenty-fold plasmon-induced enhancement of radiative emission rate in silicon nanocrystals embedded in silicon dioxide

    International Nuclear Information System (INIS)

    Gardelis, S; Gianneta, V.; Nassiopoulou, A.G

    2016-01-01

    We report on a 20-fold enhancement of the integrated photoluminescence (PL) emission of silicon nanocrystals, embedded in a matrix of silicon dioxide, induced by excited surface plasmons from silver nanoparticles, which are located in the vicinity of the silicon nanocrystals and separated from them by a silicon dioxide layer of a few nanometers. The electric field enhancement provided by the excited surface plasmons increases the absorption cross section and the emission rate of the nearby silicon nanocrystals, resulting in the observed enhancement of the photoluminescence, mainly attributed to a 20-fold enhancement in the emission rate of the silicon nanocrystals. The observed remarkable improvement of the PL emission makes silicon nanocrystals very useful material for photonic, sensor and solar cell applications.

  4. Surfing Silicon Nanofacets for Cold Cathode Electron Emission Sites.

    Science.gov (United States)

    Basu, Tanmoy; Kumar, Mohit; Saini, Mahesh; Ghatak, Jay; Satpati, Biswarup; Som, Tapobrata

    2017-11-08

    Point sources exhibit low threshold electron emission due to local field enhancement at the tip. In the case of silicon, however, the realization of tip emitters has been hampered by unwanted oxidation, limiting the number of emission sites and the overall current. In contrast to this, here, we report the fascinating low threshold (∼0.67 V μm -1 ) cold cathode electron emission from silicon nanofacets (Si-NFs). The ensembles of nanofacets fabricated at different time scales, under low energy ion impacts, yield tunable field emission with a Fowler-Nordheim tunneling field in the range of 0.67-4.75 V μm -1 . The local probe surface microscopy-based tunneling current mapping in conjunction with Kelvin probe force microscopy measurements revealed that the valleys and a part of the sidewalls of the nanofacets contribute more to the field emission process. The observed lowest turn-on field is attributed to the absence of native oxide on the sidewalls of the smallest facets as well as their lowest work function. In addition, first-principle density functional theory-based simulation revealed a crystal orientation-dependent work function of Si, which corroborates well with our experimental observations. The present study demonstrates a novel way to address the origin of the cold cathode electron emission sites from Si-NFs fabricated at room temperature. In principle, the present methodology can be extended to probe the cold cathode electron emission sites from any nanostructured material.

  5. Field emission from a single nanomechanical pillar

    International Nuclear Information System (INIS)

    Kim, Hyun S; Qin Hua; Westphall, Michael S; Smith, Lloyd M; Blick, Robert H

    2007-01-01

    We measured field emission from a silicon nanopillar mechanically oscillating between two electrodes. The pillar has a height of about 200 nm and a diameter of 50 nm, allowing resonant mechanical excitations at radio frequencies. The tunnelling barriers for field emission are mechanically modulated via displacement of the gold island on top of the pillar. We present a rich frequency-dependent response of the emission current in the frequency range of 300-400 MHz at room temperature. Modified Fowler-Nordheim field emission is observed and attributed to the mechanical oscillations of the nanopillar

  6. Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Tiwari, Rajanish N.; Chang Li

    2010-01-01

    Diamond nucleation on unscratched Si surface is great importance for its growth, and detailed understanding of this process is therefore desired for many applications. The pretreatment of the substrate surface may influence the initial growth period. In this study, diamond films have been synthesized on adamantane-coated crystalline silicon {100} substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases without the application of a bias voltage to the substrates. Prior to adamantane coating, the Si substrates were not pretreated such as abraded/scratched. The substrate temperature was ∼530 deg. C during diamond deposition. The deposited films are characterized by scanning electron microscopy, Raman spectrometry, x-ray diffraction, and x-ray photoelectron spectroscopy. These measurements provide definitive evidence for high-crystalline quality diamond film, which is synthesized on a SiC rather than clean Si substrate. Characterization through atomic force microscope allows establishing fine quality criteria of the film according to the grain size of nanodiamond along with SiC. The diamond films exhibit a low-threshold (55 V/μm) and high current-density (1.6 mA/cm 2 ) field-emission (FE) display. The possible mechanism of formation of diamond films and their FE properties have been demonstrated.

  7. Field emission electronics

    CERN Document Server

    Egorov, Nikolay

    2017-01-01

    This book is dedicated to field emission electronics, a promising field at the interface between “classic” vacuum electronics and nanotechnology. In addition to theoretical models, it includes detailed descriptions of experimental and research techniques and production technologies for different types of field emitters based on various construction principles. It particularly focuses on research into and production of field cathodes and electron guns using recently developed nanomaterials and carbon nanotubes. Further, it discusses the applications of field emission cathodes in new technologies such as light sources, flat screens, microwave and X-ray devices.

  8. Amorphous silicon detectors in positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Conti, M. (Istituto Nazionale di Fisica Nucleare, Pisa (Italy) Lawrence Berkeley Lab., CA (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  9. Amorphous silicon detectors in positron emission tomography

    International Nuclear Information System (INIS)

    Conti, M.; Perez-Mendez, V.

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters ε 2 τ's are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs

  10. Polarization of the induced THz emission of donors in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kovalevsky, K. A., E-mail: atan4@yandex.ru; Zhukavin, R. Kh.; Tsyplenkov, V. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, S. G.; Hübers, H.-W. [Humboldt University of Berlin (Germany); Abrosimov, N. V.; Shastin, V. N. [Leibniz Institute for Crystal Growth (Germany)

    2016-12-15

    The polarization of the terahertz (4.9–6.4 THz) stimulated emission of Group-V (Sb, P, As, Bi) donors in single-crystal silicon under pumping (photoionization) by a CO{sub 2} laser (photon energy 117 meV), depending on the uniaxial compressive deformation of the crystal along the [100] axis, is experimentally investigated. The influence of the field direction of the pump wave on its efficiency is discussed.

  11. Theoretical approach of photo-field emission in degenerated semiconductors. The case of slightly P-doped silicon tips; Approche theorique de la photoemission de champ a partir de semiconducteurs degeneres. Cas des pointes de silicium faiblement dope p

    Energy Technology Data Exchange (ETDEWEB)

    Chbihi El Wahoudi, A. [Ecole Doctorale des Sciences Fondamentales, Clermont-Ferrand-2 Univ., 63 - Aubiere (France). U.F.R. de Recherche Scientifique et Technique

    1996-12-20

    After defining field emission in metallic tips, we examine thoroughly a theory of photo-field emission following the works of Bagchi, Schwartz and Gao. This theory is compared to the experimental results of Reifenberger et al. We study the field emission in a semiconductor, following R. Stratton, and we propose a new theoretical interpretation of the anomalous growth of current with field, as it often occurs in the characteristic current-voltage. We assume the creation by the field of a dynamic quantum well in the surface conduction band. As a consequence of the induced degeneracy, we express theoretically the contribution to the current, of the electrons confined in the well. We compare this hypothesis to the emission of doped P silicon. There is a fairly good agreement. Assuming that the electrons are confined in the well, we develop a new theoretical approach of the photo-field emission of a degenerated semiconductor. We derive the photoelectric transition probability in the case of laser YAG pulse of picosecond duration, then the photocurrent densities of various photonic energies for distinct values of electric field, taking into account the optical property of the medium. We are thus able to interpret our experimental results with a good agreement. This original development should enable us to predict the behaviour of our tipped photocathodes in photo-injectors (CLIC, CANDELA, Tesla). These photocathodes could be interesting in infrared detection. (author) 55 refs.

  12. Nanofabrication of Arrays of Silicon Field Emitters with Vertical Silicon Nanowire Current Limiters and Self-Aligned Gates

    Science.gov (United States)

    2016-08-19

    limiters, MEMS, NEMS, field emission, cold cathodes (Some figures may appear in colour only in the online journal) 1. Introduction Dense arrays of silicon... attention has been given to densely packed, highly ordered, top-down fabricated, single crystal vertical silicon nanowire devices that are embedded

  13. Field emission in RF cavities

    International Nuclear Information System (INIS)

    Bonin, B.

    1996-01-01

    Electron field emission limits the accelerating gradient in superconducting cavities. It is shown how and why it is an important problem. The phenomenology of field emission is then described, both in DC and RF regimes. Merits of a few plausible 'remedies' to field emission are discussed. (author)

  14. Secondary electron emission in nanostructured porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ruano, G D; Ferron, J; Koropecki, R R, E-mail: gdruano@ceride.gov.a [INTEC-UNL-CONICET, Gueemes 3450 - 3000 Santa Fe (Argentina)

    2009-05-01

    We studied the reversible reduction induced by ion bombardment of the secondary electron emission (SEE) yield. This effect has been modelled as due to changes in dynamically sustained dipoles related with ions and electrons penetration ranges. Such charge configuration precludes the escape of electrons from the nanoporous silicon, making the SEE dependent on the flux of impinging ions. Since this dipolar momentum depends on the electric conduction of the porous medium, by controlled oxidation of the nanoporous structure we change the conduction features of the sample, studying the impact on the SEE reduction effect. Li ion bombardment was also used with the intention of changing the parameters determining the effect. FT-IR and Auger electron spectroscopy were used to characterize the oxidation degree of the samples at different depth scales

  15. 3D periodic structures grown on silicon by radiation of a pulsed Nd:YAG laser and their field emission properties

    Energy Technology Data Exchange (ETDEWEB)

    Karabutov, A.V. [A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, 119991 Moscow (Russian Federation); Shafeev, G.A. [A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, 119991 Moscow (Russian Federation)]. E-mail: shafeev@kapella.gpi.ru; Badi, N. [Physics Department, The University of Houston, Houston, TX 77204-5005 (United States); Nair, A.M. [TcSAM, The University of Houston, Houston, TX 77204-5004 (United States); Bensaoula, A. [Physics Department, The University of Houston, Houston, TX 77204-5005 (United States)

    2006-04-30

    Periodic three-dimensional structures were successfully grown on single crystal Si wafers either bare or Au-covered under their exposure to a pulsed radiation of a Nd:YAG laser in vacuum. The structures protrude above the initial wafer surface for 10 {mu}m while their spatial period is about 70 {mu}m. The coupling of the laser radiation to Si surface is related to the thermal non-linear absorption of the near band gap radiation. The structures exhibit an efficient field emission with an average emission current of 5 mA/cm{sup 2} and is sensitive to the post-treatment of samples. The drawbacks of the emission current densities are discussed.

  16. Silicon Photomultiplier Performance in High ELectric Field

    Science.gov (United States)

    Montoya, J.; Morad, J.

    2016-12-01

    Roughly 27% of the universe is thought to be composed of dark matter. The Large Underground Xenon (LUX) relies on the emission of light from xenon atoms after a collision with a dark matter particle. After a particle interaction in the detector, two things can happen: the xenon will emit light and charge. The charge (electrons), in the liquid xenon needs to be pulled into the gas section so that it can interact with gas and emit light. This allows LUX to convert a single electron into many photons. This is done by applying a high voltage across the liquid and gas regions, effectively ripping electrons out of the liquid xenon and into the gas. The current device used to detect photons is the photomultiplier tube (PMT). These devices are large and costly. In recent years, a new technology that is capable of detecting single photons has emerged, the silicon photomultiplier (SiPM). These devices are cheaper and smaller than PMTs. Their performance in a high electric fields, such as those found in LUX, are unknown. It is possible that a large electric field could introduce noise on the SiPM signal, drowning the single photon detection capability. My hypothesis is that SiPMs will not observe a significant increase is noise at an electric field of roughly 10kV/cm (an electric field within the range used in detectors like LUX). I plan to test this hypothesis by first rotating the SiPMs with no applied electric field between two metal plates roughly 2 cm apart, providing a control data set. Then using the same angles test the dark counts with the constant electric field applied. Possibly the most important aspect of LUX, is the photon detector because it's what detects the signals. Dark matter is detected in the experiment by looking at the ratio of photons to electrons emitted for a given interaction in the detector. Interactions with a low electron to photon ratio are more like to be dark matter events than those with a high electron to photon ratio. The ability to

  17. Knife-edge thin film field emission cathodes

    International Nuclear Information System (INIS)

    Lee, B.; Demroff, H.P.; Drew, M.M.; Elliott, T.S.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.

    1993-01-01

    Cathodes made of thin-film field emission arrays (FEA) have the advantages of high current density, pulsed emission, and low bias voltage operation. The authors have developed a technology to fabricate knife-edge field emission cathodes on (110) silicon wafers. The emitter geometry is optimized for efficient modulation at high frequency. Cathode fabrication progress and preliminary analysis of their applications in RF power sources are presented

  18. Electrophoretic deposition and field emission properties of patterned carbon nanotubes

    International Nuclear Information System (INIS)

    Zhao Haifeng; Song Hang; Li Zhiming; Yuan Guang; Jin Yixin

    2005-01-01

    Patterned carbon nanotubes on silicon substrates were obtained using electrophoretic method. The carbon nanotubes migrated towards the patterned silicon electrode in the electrophoresis suspension under the applied voltage. The carbon nanotubes arrays adhered well on the silicon substrates. The surface images of carbon nanotubes were observed by scanning electron microscopy. The field emission properties of the patterned carbon nanotubes were tested in a diode structure under a vacuum pressure below 5 x 10 -4 Pa. The measured emission area was about 1.0 mm 2 . The emission current density up to 30 mA/cm 2 at an electric field of 8 V/μm has been obtained. The deposition of patterned carbon nanotubes by electrophoresis is an alternative method to prepare field emission arrays

  19. Origin of the visible emission of black silicon microstructures

    International Nuclear Information System (INIS)

    Fabbri, Filippo; Lin, Yu-Ting; Bertoni, Giovanni; Rossi, Francesca; Salviati, Giancarlo; Smith, Matthew J.; Gradečak, Silvija; Mazur, Eric

    2015-01-01

    Silicon, the mainstay semiconductor in microelectronics, is considered unsuitable for optoelectronic applications due to its indirect electronic band gap that limits its efficiency as light emitter. Here, we univocally determine at the nanoscale the origin of visible emission in microstructured black silicon by cathodoluminescence spectroscopy and imaging. We demonstrate the formation of amorphous silicon oxide microstructures with a white emission. The white emission is composed by four features peaking at 1.98 eV, 2.24 eV, 2.77 eV, and 3.05 eV. The origin of such emissions is related to SiO x intrinsic point defects and to the sulfur doping due to the laser processing. Similar results go in the direction of developing optoelectronic devices suitable for silicon-based circuitry

  20. Field emission current from a junction field-effect transistor

    International Nuclear Information System (INIS)

    Monshipouri, Mahta; Abdi, Yaser

    2015-01-01

    Fabrication of a titanium dioxide/carbon nanotube (TiO 2 /CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO 2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO 2 /CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO 2 /CNT hetero-structure is also investigated, and well modeled

  1. Field emission for cantilever sensors

    NARCIS (Netherlands)

    Yang, C.K.; le Fèbre, A.J.; Pandraud, G.; van der Drift, E.; French, P.J.

    2008-01-01

    Field emission provides an alternative sensing solution in scaled electromechanical systems and devices, when typical displacement detection techniques fail in submicron and nanodimenions. Apart from its independency from device dimension, it has also a high response, integration and high

  2. Field performance of a polycrystalline silicon module

    International Nuclear Information System (INIS)

    Adegboyega, G.A.; Kuku, T.A.; Salau, A.A.M.

    1985-12-01

    The field performance of a polycrystalline silicon module is reported. The recorded data include the ambient temperature, solar insolation and the module output power. The module has given efficiencies in the range of 2-4% and has demonstrated good stability over a ten month period. From the field data, equations that could be used to predict performance for various seasons of the year for this location have been developed and the fit between predicted and actual performance has been found to be quite good. (author)

  3. Field Emission from Carbon Nanostructures

    Directory of Open Access Journals (Sweden)

    Filippo Giubileo

    2018-03-01

    Full Text Available Field emission electron sources in vacuum electronics are largely considered to achieve faster response, higher efficiency and lower energy consumption in comparison with conventional thermionic emitters. Carbon nanotubes had a leading role in renewing attention to field emission technologies in the early 1990s, due to their exceptional electron emitting properties enabled by their large aspect ratio, high electrical conductivity, and thermal and chemical stability. In the last decade, the search for improved emitters has been extended to several carbon nanostructures, comprising carbon nanotubes, either individual or films, diamond structures, graphitic materials, graphene, etc. Here, we review the main results in the development of carbon-based field emitters.

  4. Visible light emission from porous silicon carbide

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang

    2017-01-01

    Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small...

  5. Study of field emission phenomena

    International Nuclear Information System (INIS)

    Ramanathan, Devaki; Vijendran, P.

    1976-01-01

    The theory of field emission has been explained, using Fowler-Nordheim equation and the Fowler-Nordheim plot. The imaging theory is also described in brief. The fabrication details of a field emission microscope (FEM) are mentioned. The design of the tube and the emitter assemblies are explained in detail. Simple experiments that can be demonstrated on the FEM such as indexing, detetermination of work function and surface diffusion constants, etc. are also mentioned. The use of FEM as a simple teaching aid has been brought out. (K.B.)

  6. Field-induced negative differential spin lifetime in silicon.

    Science.gov (United States)

    Li, Jing; Qing, Lan; Dery, Hanan; Appelbaum, Ian

    2012-04-13

    We show that the electric-field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory even at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.

  7. Field emission current from a junction field-effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Monshipouri, Mahta; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nano-Physics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

    2015-04-15

    Fabrication of a titanium dioxide/carbon nanotube (TiO{sub 2}/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO{sub 2} nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO{sub 2}/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO{sub 2}/CNT hetero-structure is also investigated, and well modeled.

  8. Visible light emission from porous silicon carbide

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang

    2017-01-01

    Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small...... lattice mismatch. Secondly, SiC material is abundant, containing no rear-earth element material as commercial phosphor. In this paper, fabrication of porous SiC is introduced, and their morphology and photoluminescence are characterized. Additionally, the carrier lifetime of the porous SiC is measured...... by time-resolved photoluminescence. The ultrashort lifetime in the order of ~70ps indicates porous SiC is very promising for the application in the ultrafast visible light communications....

  9. Light emission from silicon with tin-containing nanocrystals

    Directory of Open Access Journals (Sweden)

    Søren Roesgaard

    2015-07-01

    Full Text Available Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1−x−ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 ∘C to 900 ∘C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to ≈1017 cm−3 and ≈5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 ∘C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed.

  10. Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures

    Energy Technology Data Exchange (ETDEWEB)

    Galperin, V. A.; Kitsyuk, E. P. [“Technological Center” Research-and-Production Company (Russian Federation); Pavlov, A. A. [Russian Academy of Sciences, Institute of Nanotechnologies in Microelectronics (Russian Federation); Shamanaev, A. A., E-mail: artemiy.shamanaev@tcen.ru [“Technological Center” Research-and-Production Company (Russian Federation)

    2015-12-15

    New methods for silicon nanostructuring and the possibility of raising the aspect ratios of the structures being formed are considered. It is shown that the technology developed relates to self-formation methods and is an efficient tool for improving the quality of field-emission cathodes based on carbon nanotubes (CNTs) by increasing the Si–CNT contact area and raising the efficiency of the heat sink.

  11. Field emission studies at Saclay and Orsay

    International Nuclear Information System (INIS)

    Tan, J.

    1996-01-01

    During the last five years, DC and RF equipment for field emission studies have been developed at Saclay and Orsay laboratories. Combining these devices, straight comparison has been carried out between DC and RF field emission from artificial emission sites on the same sample. Other topics are also reviewed: high field cleaning, plausible origins of thermal effects that occurred on emission sites in RF, behaviour of alumina particles under RF field, and optical observations and measurements. (author)

  12. [Effects of silicon supply on rice growth and methane emission from paddy soil under elevated UV-B radiation].

    Science.gov (United States)

    Meng, Yan; Lou, Yun-sheng; Wu, Lei; Cui, He-yang; Wang, Wei-qing

    2015-01-01

    A pot experiment was conducted to investigate the effects of silicon supply on rice growth and methane (CH4) emission in paddy field under elevated UV-B radiation. The experiment was designed with two UV-B radiation levels, i.e. ambient UV-B (ambient, A) and elevated UV-B radiation (elevated by 20%, E) ; with four silicon supply levels, i.e., Si0 (control, without silicon), Si2 (as sodium silicate, 100 kg SiO2 . hm-2), Si2 (as sodium silicate, 200 kg SiO2 hm-2) and Si3 (as slag fertilizer, 200 kg SiO2 . hm-2). The results indicated that, silicon supply obviously alleviated the depressive effect of elevated UV-B radiation on rice growth, and increased the tiller numbers, chlorophyll content, and shoot and root dry masses. Silicon supply promoted rice growth, which increased with the silicon supply level (sodium silicate). Slag fertilizer was better than*sodium silicate in promoting rice growth. CH4 flux and accumulated CH4emission were obviously increased by elevated UV-B radiation, but significantly decreased by silicon application. CH4 emission was reduced with increasing the silicon supply level. Under the same silicon supply level, slag fertilizer was better than sodium silicate in inhibiting CH4 flux and accumulated CH4 emission. This research suggested that fertilizing slag in rice production was helpful not only in utilizing industrial wastes, but also in significantly mitigating CH4 emissions in rice paddy under elevated UV-B radiation.

  13. Formation of photoluminescent n-type macroporous silicon: Effect of magnetic field and lateral electric potential

    Energy Technology Data Exchange (ETDEWEB)

    Antunez, E.E. [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico); Estevez, J.O. [Instituto de Física, B. Universidad Autónoma de Puebla, A.P. J-48, Puebla 72570 (Mexico); Campos, J. [Instituto de Energías Renovables, UNAM, Priv. Xochicalco S/N, Temixco, Morelos, CP 62580 (Mexico); Basurto-Pensado, M.A. [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico); Agarwal, V., E-mail: vagarwal@uaem.mx [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico)

    2014-11-15

    Metal electrode-free electrochemical etching of low doped n-type silicon substrates, under the combined effect of magnetic and lateral electric field, is used to fabricate photoluminescent n-type porous silicon structures in dark conditions. A lateral gradient in terms of structural characteristics (i.e. thickness and pore dimensions) along the electric field direction is formed. Enhancement of electric and magnetic field resulted in the increase of pore density and a change in the shape of the macropore structure, from circular to square morphology. Broad photoluminescence (PL) emission from 500 to 800 nm, with a PL peak wavelength ranging from 571 to 642 nm, is attributed to the wide range of microporous features present on the porous silicon layer.

  14. Emission of blue light from hydrogenated amorphous silicon carbide

    Science.gov (United States)

    Nevin, W. A.; Yamagishi, H.; Yamaguchi, M.; Tawada, Y.

    1994-04-01

    THE development of new electroluminescent materials is of current technological interest for use in flat-screen full-colour displays1. For such applications, amorphous inorganic semiconductors appear particularly promising, in view of the ease with which uniform films with good mechanical and electronic properties can be deposited over large areas2. Luminescence has been reported1 in the red-green part of the spectrum from amorphous silicon carbide prepared from gas-phase mixtures of silane and a carbon-containing species (usually methane or ethylene). But it is not possible to achieve blue luminescence by this approach. Here we show that the use of an aromatic species-xylene-as the source of carbon during deposition results in a form of amorphous silicon carbide that exhibits strong blue luminescence. The underlying structure of this material seems to be an unusual combination of an inorganic silicon carbide lattice with a substantial 'organic' π-conjugated carbon system, the latter dominating the emission properties. Moreover, the material can be readily doped with an electron acceptor in a manner similar to organic semiconductors3, and might therefore find applications as a conductivity- or colour-based chemical sensor.

  15. Laser-assisted electron emission from gated field-emitters

    CERN Document Server

    Ishizuka, H; Yokoo, K; Mimura, H; Shimawaki, H; Hosono, A

    2002-01-01

    Enhancement of electron emission by illumination of gated field-emitters was studied using a 100 mW cw YAG laser at a wavelength of 532 nm, intensities up to 10 sup 7 W/m sup 2 and mechanically chopped with a rise time of 4 mu s. When shining an array of 640 silicon emitters, the emission current responded quickly to on-off of the laser. The increase of the emission current was proportional to the basic emission current at low gate voltages, but it was saturated at approx 3 mu A as the basic current approached 100 mu A with the increase of gate voltage. The emission increase was proportional to the square root of laser power at low gate voltages and to the laser power at elevated gate voltages. For 1- and 3-tip silicon emitters, the rise and fall of the current due to on-off of the laser showed a significant time lag. The magnitude of emission increase was independent of the position of laser spot on the emitter base and reached 2 mu A at a basic current of 5 mu A without showing signs of saturation. The mech...

  16. Silicon Nanowire Field-effect Chemical Sensor

    NARCIS (Netherlands)

    Chen, S.

    2011-01-01

    This thesis describes the work that has been done on the project “Design and optimization of silicon nanowire for chemical sensing‿, including Si-NW fabrication, electrical/electrochemical modeling, the application as ISFET, and the build-up of Si- NW/LOC system for automatic sample delivery. A

  17. Field electron emission spectrometer combined with field ion/electron microscope as a field emission laboratory

    International Nuclear Information System (INIS)

    Shkuratov, S.I.; Ivanov, S.N.; Shilimanov, S.N.

    1996-01-01

    The facility, combining the field ion microscope, field electron emission microscope and field electron emission spectrometer, is described. Combination of three methodologies makes it possible to carry out the complete cycle of emission studies. Atom-plane and clean surface of the studied samples is prepared by means of field evaporation of the material atom layers without any thermal and radiation impact. This enables the study of atom and electron structure of clean surface of the wide range materials, the study whereof through the field emission methods was previously rather difficult. The temperature of the samples under study changes from 75 up to 2500 K. The energy resolution of the electron analyzer equals 30 MeV. 19 refs., 10 figs

  18. Electric fields in nonhomogeneously doped silicon. Summary of simulations

    International Nuclear Information System (INIS)

    Kotov, I.V.; Humanic, T.J.; Nouais, D.; Randel, J.; Rashevsky, A.

    2006-01-01

    Variations of the doping concentration inside a silicon device result in electric field distortions. These distortions, 'parasitic' fields, have been observed in Silicon Drift Detectors [D. Nouais, et al., Nucl. Instr. and Meth. A 501 (2003) 119; E. Crescio, et al., Nucl. Instr. and Meth. A 539 (2005) 250]. Electric fields inside a silicon device can be calculated for a given doping profile. In this study, the ATLAS device simulator. [Silvaco International, 4701 Patrick Henry Drive, Bldg.2, Santa Clara, CA 95054, USA and s imulation/atlas.html>] was used to calculate the electric field inside an inhomogeneously doped device. Simulations were performed for 1D periodic doping profiles. Results show strong dependence of the parasitic field strength on the 'smoothness' of the doping profile

  19. Electric fields in nonhomogeneously doped silicon. Summary of simulations

    Energy Technology Data Exchange (ETDEWEB)

    Kotov, I.V. [Ohio State University, Columbus, OH 43210 (United States)]. E-mail: kotov@mps.ohio-state.edu; Humanic, T.J. [Ohio State University, Columbus, OH 43210 (United States); Nouais, D. [INFN, Sezione di Torino, I-10125 Turin (Italy); Randel, J. [Ohio State University, Columbus, OH 43210 (United States); Rashevsky, A. [INFN, Sezione di Triste, I-34127 Trieste (Italy)

    2006-11-30

    Variations of the doping concentration inside a silicon device result in electric field distortions. These distortions, 'parasitic' fields, have been observed in Silicon Drift Detectors [D. Nouais, et al., Nucl. Instr. and Meth. A 501 (2003) 119; E. Crescio, et al., Nucl. Instr. and Meth. A 539 (2005) 250]. Electric fields inside a silicon device can be calculated for a given doping profile. In this study, the ATLAS device simulator. [Silvaco International, 4701 Patrick Henry Drive, Bldg.2, Santa Clara, CA 95054, USA and ] was used to calculate the electric field inside an inhomogeneously doped device. Simulations were performed for 1D periodic doping profiles. Results show strong dependence of the parasitic field strength on the 'smoothness' of the doping profile.

  20. Simulation and fabrication of carbon nanotubes field emission pressure sensors

    International Nuclear Information System (INIS)

    Qian Kaiyou; Chen Ting; Yan Bingyong; Lin Yangkui; Xu Dong; Sun Zhuo; Cai Bingchu

    2006-01-01

    A novel field emission pressure sensor has been achieved utilizing carbon nanotubes (CNTs) as the electron source. The sensor consists of the anode sensing film fabricated by wet etching process and multi-wall carbon nanotubes (MWNTs) cathode in the micro-vacuum chamber. MWNTs on the silicon substrate were grown by thermal CVD. The prototype pressure sensor has a measured sensitivity of about 0.17-0.77 nA/Pa (101-550 KPa). The work shows the potential use of CNTs-based field-emitter in microsensors, such as accelerometers and tactile sensors

  1. Ultrafast spontaneous emission of copper-doped silicon enhanced by an optical nanocavity.

    Science.gov (United States)

    Sumikura, Hisashi; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya

    2014-05-23

    Dopants in silicon (Si) have attracted attention in the fields of photonics and quantum optics. However, the optical characteristics are limited by the small spontaneous emission rate of dopants in Si. This study demonstrates a large increase in the spontaneous emission rate of copper isoelectronic centres (Cu-IECs) doped into Si photonic crystal nanocavities. In a cavity with a quality factor (Q) of ~16,000, the photoluminescence (PL) lifetime of the Cu-IECs is 1.1 ns, which is 30 times shorter than the lifetime of a sample without a cavity. The PL decay rate is increased in proportion to Q/Vc (Vc is the cavity mode volume), which indicates the Purcell effect. This is the first demonstration of a cavity-enhanced ultrafast spontaneous emission from dopants in Si, and it may lead to the development of fast and efficient Si light emitters and Si quantum optical devices based on dopants with efficient optical access.

  2. High-field EPR spectroscopy of thermal donors in silicon

    DEFF Research Database (Denmark)

    Dirksen, R.; Rasmussen, F.B.; Gregorkiewicz, T.

    1997-01-01

    Thermal donors generated in p-type boron-doped Czochralski-grown silicon by a 450 degrees C heat treatment have been studied by high-field magnetic resonance spectroscopy. In the experiments conducted at a microwave frequency of 140 GHz and in a magnetic field of approximately 5 T four individual...

  3. Effectively Improved Field Emission Properties of Multiwalled Carbon Nanotubes/Graphenes Composite Field Emitter by Covering on the Si Pyramidal Structure

    DEFF Research Database (Denmark)

    Chen, Leifeng; Yu, Hua; Zhong, Jiasong

    2015-01-01

    The composite nanostructure emitter of multiwalled carbon nanotubes and graphenes was deposited on pyramidal silicon substrate by the simple larger scale electrophoretic deposition process. The field emission (FE) properties of the composite/pyramidal Si device were greatly improved compared...

  4. Silicon Nanowire Field-effect Chemical Sensor

    OpenAIRE

    Chen, S.

    2011-01-01

    This thesis describes the work that has been done on the project “Design and optimization of silicon nanowire for chemical sensing‿, including Si-NW fabrication, electrical/electrochemical modeling, the application as ISFET, and the build-up of Si- NW/LOC system for automatic sample delivery. A novel top-down fabrication technique was presented for single-crystal Si-NW fabrication realized with conventional microfabrication technique. High quality triangular Si-NWs were made with high wafer-s...

  5. Performance of silicon drift detectors in a magnetic field

    International Nuclear Information System (INIS)

    Castoldi, A.; Gatti, E.; Manzari, V.; Rehak, P.

    1997-01-01

    A study of the properties of silicon drift detectors in a magnetic field was carried out. A silicon drift detector with 41 anodes, providing unambiguous x and y position information, was used for measurements. Studies were done in three principal orientations of the detector relative to the direction of the magnetic field. The magnetic field was varied between 0 and 0.7 T and the drift field between 300 and 600 V/cm. Basic agreement with the theory of electron transport in semiconductors in a magnetic field was found. The transport properties of electrons in a magnetic field can be described by a mobility matrix. The components of the matrix depend on the electron mobility, Hall mobility and on the vector of the magnetic field. The precision of measurement was better than 0.2% for most of the parameters. For the electric field of a silicon drift detector, there is a first-order effect of the magnetic field only in one out of three principal directions. In this direction, the plane of the detector is perpendicular to the magnetic field and electrons drift at an angle α relative to the direction of the drift field. In two other principal directions, which are more important for tracking of the particles with drift detectors, there are no first-order magnetic effects. (orig.)

  6. Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

    KAUST Repository

    Montes Muñoz, Enrique

    2017-01-24

    We investigate the electronic transport properties of silicon nanotubes attached to metallic electrodes from first principles, using density functional theory and the non-equilibrium Green\\'s function method. The influence of the surface termination is studied as well as the dependence of the transport characteristics on the chirality, diameter, and length. Strong electronic coupling between nanotubes and electrodes is found to be a general feature that results in low contact resistance. The conductance in the tunneling regime is discussed in terms of the complex band structure. Silicon nanotube field effect transistors are simulated by applying a uniform potential gate. Our results demonstrate very high values of transconductance, outperforming the best commercial silicon field effect transistors, combined with low values of sub-threshold swing.

  7. Coulomb scattering in field and photofield emission

    International Nuclear Information System (INIS)

    Donders, P.J.; Lee, M.J.G.

    1987-01-01

    An anomalous high-energy tail has been observed in the measured total energy distribution (TED) in photofield emission from tungsten. The strength of this tail is proportional to the product of the photofield emission current and the total emission current. Similar high- and low-energy tails in the TED's in field emission, which have previously been reported by several workers, are also observed. In any given measurement, the fraction of the total photofield-emission current in the anomalous photofield-emission tail is approximately equal to the fraction of the total field-emission current in the anomalous field-emission tail. Measurements of both the absolute strengths and energy dependences of the anomalous tails are reported. The experimental observations are consistent with the predictions of a classical calculation of the energy transfer that results from the Coulomb interaction between electrons in the vacuum near the field emitter. The various internal mechanisms that have previously been invoked to account for the tails in field-emission TED's do not appear to contribute significantly to the anomalous distributions observed in the present work

  8. Field emission from vertically aligned few-layer graphene

    International Nuclear Information System (INIS)

    Malesevic, Alexander; Kemps, Raymond; Vanhulsel, Annick; Chowdhury, Manish Pal; Volodin, Alexander; Van Haesendonck, Chris

    2008-01-01

    The electric field emission behavior of vertically aligned few-layer graphene was studied in a parallel plate-type setup. Few-layer graphene was synthesized in the absence of any metallic catalyst by microwave plasma enhanced chemical vapor deposition with gas mixtures of methane and hydrogen. The deposit consists of nanostructures that are several micrometers wide, highly crystalline stacks of four to six atomic layers of graphene, aligned vertically to the substrate surface in a high density network. The few-layer graphene is found to be a good field emitter, characterized by turn-on fields as low as 1 V/μm and field amplification factors up to several thousands. We observe a clear dependence of the few-layer graphene field emission behavior on the synthesis parameters: Hydrogen is identified as an efficient etchant to improve field emission, and samples grown on titanium show lower turn-on field values and higher amplification factors when compared to samples grown on silicon

  9. Experimental realization of a silicon spin field-effect transistor

    OpenAIRE

    Huang, Biqin; Monsma, Douwe J.; Appelbaum, Ian

    2007-01-01

    A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin direction at the spin detector and hence the output collector current, this comprises a spin field-effect transistor. An improved hot-electron spin injector providing ~115% magnetocurrent, corresponding to at least ~38% electron current spin polarization after...

  10. White-light emission from porous-silicon-aluminium Schottky junctions

    International Nuclear Information System (INIS)

    Masini, G.; La Monica, S.; Maiello, G.

    1996-01-01

    Porous-silicon-based white-light-emitting devices are presented. The fabrication process on different substrates is described. The peculiarities of technological steps for device fabrication (porous-silicon formation and aluminium treatment) are underlined. Doping profile of the porous layer, current-voltage characteristics, time response, lifetime tests and electroluminescence emission spectrum of the device are presented. A model for electrical behaviour of Al/porous silicon Schottky junction is presented. Electroluminescence spectrum of the presented devices showed strong similarities with white emission from crystalline silicon junctions in the breakdown region

  11. Enhanced light emission in photonic crystal nanocavities with Erbium-doped silicon nanocrystals

    International Nuclear Information System (INIS)

    Makarova, Maria; Sih, Vanessa; Vuckovic, Jelena; Warga, Joe; Li Rui; Dal Negro, Luca

    2008-01-01

    Photonic crystal nanocavities are fabricated in silicon membranes covered by thermally annealed silicon-rich nitride films with Erbium-doped silicon nanocrystals. Silicon nitride films were deposited by sputtering on top of silicon on insulator wafers. The nanocavities were carefully designed in order to enhance emission from the nanocrystal sensitized Erbium at the 1540 nm wavelength. Experimentally measured quality factors of ∼6000 were found to be consistent theoretical predictions. The Purcell factor of 1.4 was estimated from the observed 20-fold enhancement of Erbium luminescence

  12. Tunneling emission of electrons from semiconductors' valence bands in high electric fields

    International Nuclear Information System (INIS)

    Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

    2006-01-01

    Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

  13. Ultrafast nonlinear response of silicon carbide to intense THz fields

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Kaltenecker, Korbinian J.

    2017-01-01

    We demonstrate ultrafast nonlinear absorption induced by strong, single-cycle THz fields in bulk, lightly doped 4H silicon carbide. A combination of Zener tunneling and intraband transitions makes the effect as at least as fast as the excitation pulse. The sub-picosecond recovery time makes...

  14. Field emission from finite barrier quantum structures

    Energy Technology Data Exchange (ETDEWEB)

    Biswas Sett, Shubhasree, E-mail: shubhasree24@gmail.com [The Institution of Engineers - India, 8, Gokhale Road, Kolkata 700 020 (India); Bose, Chayanika, E-mail: chayanikab@ieee.org [Electronics and Telecommunication Engg. Dept., Jadavpur University, Kolkata 700 032 (India)

    2014-10-01

    We study field emission from various finite barrier quasi-low dimensional structures, taking image force into account. To proceed, we first formulate an expression for field emission current density from a quantum dot. Transverse dimensions of the dot are then increased in turn, to obtain current densities respectively from quantum wire and quantum well with infinite potential energy barriers. To find out field emission from finite barrier structures, the above analysis is followed with a correction in the energy eigen values. In course, variations of field emission current density with strength of the applied electric field and structure dimensions are computed considering n-GaAs and n-GaAs/Al{sub x}Ga{sub 1−x}As as the semiconductor materials. In each case, the current density is found to increase exponentially with the applied field, while it oscillates with structure dimensions. The magnitude of the emission current is less when the image force is not considered, but retains the similar field dependence. In all cases, the field emission from infinite barrier structures exceeds those from respective finite barrier ones.

  15. Tin - an unlikely ally for silicon field effect transistors?

    KAUST Repository

    Hussain, Aftab M.

    2014-01-13

    We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Distribution of electric field and charge collection in silicon strip detectors

    International Nuclear Information System (INIS)

    Anokhin, I.E.; Zinets, O.S.

    1995-01-01

    The distribution of electric field in silicon strip detectors is analyzed in the case of dull depletion as well as for partial depletion. Influence of inhomogeneous electric fields on the charge collection and performances of silicon strip detectors is discussed

  17. Ballistic Spin Field Effect Transistor Based on Silicon Nanowires

    Science.gov (United States)

    Osintsev, Dmitri; Sverdlov, Viktor; Stanojevic, Zlatan; Selberherr, Siegfried

    2011-03-01

    We investigate the properties of ballistic spin field-effect transistors build on silicon nanowires. An accurate description of the conduction band based on the k . p} model is necessary in thin and narrow silicon nanostructures. The subband effective mass and subband splitting dependence on the nanowire dimensions is analyzed and used in the transport calculations. The spin transistor is formed by sandwiching the nanowire between two ferromagnetic metallic contacts. Delta-function barriers at the interfaces between the contacts and the silicon channel are introduced. The major contribution to the electric field-dependent spin-orbit interaction in confined silicon systems is due to the interface-induced inversion asymmetry which is of the Dresselhaus type. We study the current and conductance through the system for the contacts being in parallel and anti-parallel configurations. Differences between the [100] and [110] orientated structures are investigated in details. This work is supported by the European Research Council through the grant #247056 MOSILSPIN.

  18. Pulsar Emission Geometry and Accelerating Field Strength

    Science.gov (United States)

    DeCesar, Megan E.; Harding, Alice K.; Miller, M. Coleman; Kalapotharakos, Constantinos; Parent, Damien

    2012-01-01

    The high-quality Fermi LAT observations of gamma-ray pulsars have opened a new window to understanding the generation mechanisms of high-energy emission from these systems, The high statistics allow for careful modeling of the light curve features as well as for phase resolved spectral modeling. We modeled the LAT light curves of the Vela and CTA I pulsars with simulated high-energy light curves generated from geometrical representations of the outer gap and slot gap emission models. within the vacuum retarded dipole and force-free fields. A Markov Chain Monte Carlo maximum likelihood method was used to explore the phase space of the magnetic inclination angle, viewing angle. maximum emission radius, and gap width. We also used the measured spectral cutoff energies to estimate the accelerating parallel electric field dependence on radius. under the assumptions that the high-energy emission is dominated by curvature radiation and the geometry (radius of emission and minimum radius of curvature of the magnetic field lines) is determined by the best fitting light curves for each model. We find that light curves from the vacuum field more closely match the observed light curves and multiwavelength constraints, and that the calculated parallel electric field can place additional constraints on the emission geometry

  19. Electron beam brightness with field immersed emission

    International Nuclear Information System (INIS)

    Boyd, J.K.; Neil, V.K.

    1985-01-01

    The beam quality or brightness of an electron beam produced with field immersed emission is studied with two models. First, an envelope formulation is used to determine the scaling of brightness with current, magnetic field and cathode radius, and examine the equilibrium beam radius. Second, the DPC computer code is used to calculate the brightness of two electron beam sources

  20. Synthesis of porous silicon nano-wires and the emission of red luminescence

    International Nuclear Information System (INIS)

    Congli, Sun; Hao, Hu; Huanhuan, Feng; Jingjing, Xu; Yu, Chen; Yong, Jin; Zhifeng, Jiao; Xiaosong, Sun

    2013-01-01

    This very paper is focusing on the characterization of porous silicon nano-wires prepared via a two-step route, the electroless chemical etching and the following post-treatment of HF/HNO 3 solution. Hence, scanning electron microscopy, transmission electron microscopy and confocal fluorescence microscopy are employed for this purpose. From the results of experiments, one can find that the as-prepared silicon nano-wire is of smooth surface and that no visible photo-luminescence emission could be seen. However, the porous structure can be found in the silicon nano-wire treated with HF/HNO 3 solution, and the clear photo-luminescence emission of 630 nm can be recorded with a confocal fluorescence microscope. The transmission electron microscopy test tells that the porous silicon nano-wire is made up of a porous crystalline silicon nano-core and a rough coating of silicon oxide. Besides, based on the post-HF- and -H 2 O 2 - treatments, the emission mechanism of the red luminescence has been discussed and could be attributed to the quantum confinement/luminescence center model which could be simply concluded as that the electron–hole pairs are mainly excited inside the porous silicon nano-core and then tunneling out and recombining at the silicon oxide coating.

  1. Synthesis of porous silicon nano-wires and the emission of red luminescence

    Energy Technology Data Exchange (ETDEWEB)

    Congli, Sun [School of Materials Science and Engineering, Sichuan University (China); Hao, Hu [National Engineering Research Center for Biomaterials, Sichuan University, Chengdu 610064, Sichuan (China); Huanhuan, Feng; Jingjing, Xu; Yu, Chen; Yong, Jin; Zhifeng, Jiao [School of Materials Science and Engineering, Sichuan University (China); Xiaosong, Sun, E-mail: sunxs@scu.edu.cn [School of Materials Science and Engineering, Sichuan University (China)

    2013-10-01

    This very paper is focusing on the characterization of porous silicon nano-wires prepared via a two-step route, the electroless chemical etching and the following post-treatment of HF/HNO{sub 3} solution. Hence, scanning electron microscopy, transmission electron microscopy and confocal fluorescence microscopy are employed for this purpose. From the results of experiments, one can find that the as-prepared silicon nano-wire is of smooth surface and that no visible photo-luminescence emission could be seen. However, the porous structure can be found in the silicon nano-wire treated with HF/HNO{sub 3} solution, and the clear photo-luminescence emission of 630 nm can be recorded with a confocal fluorescence microscope. The transmission electron microscopy test tells that the porous silicon nano-wire is made up of a porous crystalline silicon nano-core and a rough coating of silicon oxide. Besides, based on the post-HF- and -H{sub 2}O{sub 2}- treatments, the emission mechanism of the red luminescence has been discussed and could be attributed to the quantum confinement/luminescence center model which could be simply concluded as that the electron–hole pairs are mainly excited inside the porous silicon nano-core and then tunneling out and recombining at the silicon oxide coating.

  2. Patterning of hydrogenated microcrystalline silicon growth by magnetic field

    Czech Academy of Sciences Publication Activity Database

    Fejfar, Antonín; Stuchlík, Jiří; Mates, Tomáš; Ledinský, Martin; Honda, Shinya; Kočka, Jan

    2005-01-01

    Roč. 87, č. 1 (2005), 011901/1-011901/3 ISSN 0003-6951 R&D Projects: GA AV ČR(CZ) IAA1010316; GA AV ČR(CZ) IAA1010413; GA ČR(CZ) GD202/05/H003 Institutional research plan: CEZ:AV0Z10100521 Keywords : hydrogenated microcrystalline silicon * magnetic field growth Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.127, year: 2005

  3. Linear Optical Response of Silicon Nanotubes Under Axial Magnetic Field

    Science.gov (United States)

    Chegel, Raad; Behzad, Somayeh

    2013-01-01

    We investigated the optical properties of silicon nanotubes (SiNTs) in the low energy region, E < 0.5 eV, and middle energy region, 1.8 eV < E < 2 eV. The dependence of optical matrix elements and linear susceptibility on radius and magnetic field, in terms of one-dimensional (1-d) wavevector and subband index, is calculated using the tight-binding approximation. It is found that, on increasing the nanotube diameter, the low-energy peaks show red-shift and their intensities are decreased. Also, we found that in the middle energy region all tubes have two distinct peaks, where the energy position of the second peak is approximately constant and independent of the nanotube diameter. Comparing the band structure of these tubes in different magnetic fields, several differences are clearly seen, such as splitting of degenerate bands, creation of additional band-edge states, and bandgap modification. It is found that applying the magnetic field leads to a phase transition in zigzag silicon hexagonal nanotubes (Si h-NTs), unlike in zigzag silicon gear-like nanotubes (Si g-NTs), which remain semiconducting in any magnetic field. We found that the axial magnetic field has two effects on the linear susceptibility spectrum, namely broadening and splitting. The axial magnetic field leads to the creation of a peak with energy less than 0.2 eV in metallic Si h-NTs, whereas in the absence of a magnetic field such a transition is not allowed.

  4. Electron field emission for ultrananocrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Krauss, A. R.; Auciello, O.; Ding, M. Q.; Gruen, D. M.; Huang, Y.; Zhirnov, V. V.; Givargizov, E. I.; Breskin, A.; Chechen, R.; Shefer, E. (and others)

    2001-03-01

    Ultrananocrystalline diamond (UNCD) films 0.1--2.4 {mu}m thick were conformally deposited on sharp single Si microtip emitters, using microwave CH{sub 4}--Ar plasma-enhanced chemical vapor deposition in combination with a dielectrophoretic seeding process. Field-emission studies exhibited stable, extremely high (60--100 {mu}A/tip) emission current, with little variation in threshold fields as a function of film thickness or Si tip radius. The electron emission properties of high aspect ratio Si microtips, coated with diamond using the hot filament chemical vapor deposition (HFCVD) process were found to be very different from those of the UNCD-coated tips. For the HFCVD process, there is a strong dependence of the emission threshold on both the diamond coating thickness and Si tip radius. Quantum photoyield measurements of the UNCD films revealed that these films have an enhanced density of states within the bulk diamond band gap that is correlated with a reduction in the threshold field for electron emission. In addition, scanning tunneling microscopy studies indicate that the emission sites from UNCD films are related to minima or inflection points in the surface topography, and not to surface asperities. These data, in conjunction with tight binding pseudopotential calculations, indicate that grain boundaries play a critical role in the electron emission properties of UNCD films, such that these boundaries: (a) provide a conducting path from the substrate to the diamond--vacuum interface, (b) produce a geometric enhancement in the local electric field via internal structures, rather than surface topography, and (c) produce an enhancement in the local density of states within the bulk diamond band gap.

  5. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    2015-01-01

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  6. Photoemission and photo-field-emission from photocathodes with arrays of silicon tips under continuous and pulsed lasers action; Photoemission et photoemission de champ a partir de photocathodes a reseaux de pointes de silicium sous l`action de lasers continus et pulses

    Energy Technology Data Exchange (ETDEWEB)

    Laguna, M.

    1995-11-01

    The electron machines`s development and improvement go through the discovery of new electron sources of high brightness. After reminding the interests in studying silicon cathodes with array of tips as electron sources, I describe, in the three steps model, the main phenomenological features related to photoemission and photoemission and photo-field-emission from a semi-conductor. the experimental set-ups used for the measurements reported in chapter four, five and six are described in chapter three. In chapter three. In chapter four several aspects of photo-field-emission in continuous and nanosecond regimes, studied on the Clermont-Ferrand`s test bench are tackled. We have measured quantum efficacies of 0.4 percent in the red (1.96 eV). Temporal responses in the nanoseconds range (10 ns) were observed with the Nd: YLF laser. With the laser impinging at an oblique angle we obtained ratios of photocurrent to dark current of the order of twenty. The issue of the high energy extracted photocurrent saturation is addressed and I give a preliminary explanation. In collaboration with the L.A.L. (Laboratoire de l`Accelerateur Lineaire) some tests with shortened pulsed laser beam (Nd: YAG laser 35 ps) were performed. Satisfactory response times have been obtained within the limitation of the scope (400 ps). (authors). 101 refs. 93 figs., 27 tabs., 3 photos., 1 append.

  7. Field electron emission from branched nanotubes film

    International Nuclear Information System (INIS)

    Zeng Baoqing; Tian Shikai; Yang Zhonghai

    2005-01-01

    We describe the preparation and analyses of films composed of branched carbon nanotubes (CNTs). The CNTs were grown on a Ni catalyst film using chemical vapor deposition from a gas containing acetylene. From scanning electron microscope (SEM) and transmission electron microscope (TEM) analyses, the branched structure of the CNTs was determined; the field emission characteristics in a vacuum chamber indicated a lower turn on field for branched CNTs than normal CNTs

  8. Field emission from patterned SnO2 nanostructures

    International Nuclear Information System (INIS)

    Zhang Yongsheng; Yu Ke; Li Guodong; Peng Deyan; Zhang Qiuxiang; Hu Hongmei; Xu Feng; Bai Wei; Ouyang Shixi; Zhu Ziqiang

    2006-01-01

    A simple and reliable method has been developed for synthesizing finely patterned tin dioxide (SnO 2 ) nanostructure arrays on silicon substrates. A patterned Au catalyst film was prepared on the silicon wafer by radio frequency (RF) magnetron sputtering and photolithographic patterning processes. The patterned SnO 2 nanostructures arrays, a unit area is of ∼500 μm x 200 μm, were synthesized via vapor phase transport method. The surface morphology and composition of the as-synthesized SnO 2 nanostructures were characterized by means of scanning electron microscopy (SEM) and X-ray diffraction (XRD). The mechanism of formation of SnO 2 nanostructures was also discussed. The measurement of field emission (FE) revealed that the as-synthesized SnO 2 nanorods, nanowires and nanoparticles arrays have a lower turn-on field of 2.6, 3.2 and 3.9 V/μm, respectively, at the current density of 0.1 μA/cm 2 . This approach must have a wide variety of applications such as fabrications of micro-optical components and micropatterned oxide thin films used in FE-based flat panel displays, sensor arrays and so on

  9. Field oxide radiation damage measurements in silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland); Singh, P; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

    1993-04-01

    Surface radiation damage in planar processed silicon detectors is caused by radiation generated holes being trapped in the silicon dioxide layers on the detector wafer. We have studied charge trapping in thick (field) oxide layers on detector wafers by irradiating FOXFET biased strip detectors and MOS test capacitors. Special emphasis was put on studying how a negative bias voltage across the oxide during irradiation affects hole trapping. In addition to FOXFET biased detectors, negatively biased field oxide layers may exist on the n-side of double-sided strip detectors with field plate based n-strip separation. The results indicate that charge trapping occurred both close to the Si-SiO[sub 2] interface and in the bulk of the oxide. The charge trapped in the bulk was found to modify the electric field in the oxide in a way that leads to saturation in the amount of charge trapped in the bulk when the flatband/threshold voltage shift equals the voltage applied over the oxide during irradiation. After irradiation only charge trapped close to the interface is annealed by electrons tunneling to the oxide from the n-type bulk. (orig.).

  10. Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

    Science.gov (United States)

    Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

    2018-06-01

    Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

  11. Silicon photomultipliers for positron emission tomography detectors with depth of interaction encoding capability

    International Nuclear Information System (INIS)

    Taghibakhsh, Farhad; Reznik, Alla; Rowlands, John A.

    2011-01-01

    Silicon photomultipliers (SiPMs) are receiving increasing attention in the field of positron emission tomography (PET) detectors. Compared to photomultiplier tubes, they offer novel detector configurations for the extraction of depth of interaction (DOI) information, or enable emerging medical imaging modalities such as simultaneous PET-magnetic resonant imaging (MRI). In this article, we used 2x2x20 mm 3 LYSO scintillator crystals coupled to SiPMs on both ends (dual-ended readout configuration) to evaluate the detector performance for DOI-PET applications. We investigated the effect of scintillator crystal surface finishing on sensitivity and resolution of DOI, as well as on energy and timing resolution. Measurements indicate DOI sensitivity and resolution of 7.1% mm -1 and 2.1±0.6 mm for saw-cut, and 1.3% mm -1 and 9.0±1.5 mm, for polished scintillator crystals, respectively. Energy resolution varies from 19% when DOI is in the center, to 15% with DOI at either end of the saw-cut crystal, while it remains constant at ∼14% for polished scintillators. Based on our results we conclude that 2x2x20 mm 3 saw-cut (without any special side wall polishing) LYSO crystals coupled to 2x2 mm 2 silicon photomultipliers are optimal for isotropic 2 mm resolution DOI-PET applications.

  12. Enhanced field emission behavior of layered MoSe2

    International Nuclear Information System (INIS)

    Suryawanshi, Sachin R; Pawbake, Amit S; Jadkar, Sandesh R; More, Mahendra A; Pawar, Mahendra S; Late, Dattatray J

    2016-01-01

    Herein, we report one step facile chemical vapor deposition method for synthesis of single-layer MoSe 2 nanosheets with average lateral dimension ∼60 μm on 300 nm SiO 2 /Si and n-type silicon substrates and field emission investigation of MoSe 2 /Si at the base pressure of ∼1 × 10 −8 mbar. The morphological and structural analyses of the as-deposited single-layer MoSe 2 nanosheets were carried out using an optical microscopy, Raman spectroscopy and atomic force microscopy. Furthermore, the values of turn-on and threshold fields required to extract an emission current densities of 1 and 10 μA cm −2 , are found to be ∼1.9 and ∼2.3 V μm −1 , respectively. Interestingly, the MoSe 2 nanosheet emitter delivers maximum field emission current density of ∼1.5 mA cm −2 at a relatively lower applied electric field of ∼3.9 V μm −1 . The long term operational current stability recorded at the preset values of 35 μA over 3 hr duration and is found to be very good. The observed results demonstrates that the layered MoSe 2 nanosheet based field emitter can open up many opportunities for their potential application as an electron source in flat panel display, transmission electron microscope, and x-ray generation. Thus, the facile one step synthesis approach and robust nature of single-layer MoSe 2 nanosheets emitter can provide prospects for the future development of practical electron sources. (paper)

  13. Fluxon induced resistance and field emission

    CERN Document Server

    Calatroni, Sergio; Darriulat, Pierre; Peck, M A; Valente, A M; Van't Hof, C A

    2000-01-01

    The surface resistance of superconducting niobium films induced by the presence of trapped magnetic flux, presumably in the form of a pinned fluxon lattice, is shown to be modified by the presence of a field emitting impurity or defect. The modification takes the form of an additional surface resistance proportional to the density of the fluxon lattice and increasing linearly with the amplitude of the microwave above a threshold significantly lower than the field emission threshold. Such an effect, precursor of electron emission, is observed here for the first time in a study using radiofrequency cavities operated at their fundamental 1.5 GHz frequency. The measured properties of the additional surface resistance severely constrain possible explanations of the observed effect.

  14. Electron injection in diodes with field emission

    International Nuclear Information System (INIS)

    Denavit, J.; Strobel, G.L.

    1986-01-01

    This paper presents self-consistent steady-state solutions of the space charge, transmitted current, and return currents in diodes with electron injection from the cathode and unlimited field emission of electrons and ions from both electrodes. Time-dependent particle simulations of the diode operation confirm the analytical results and show how these steady states are reached. The results are applicable to thermionic diodes and to photodiodes

  15. Analysis of borophosphosilicate glass layers on silicon wafers by X-ray emission from photon and electron excitation

    International Nuclear Information System (INIS)

    Elgersma, O.; Borstrok, J.J.M.

    1989-01-01

    Phosphorus and oxygen concentrations in the homogeneous layer of borosilicate glass (BPSG) deposited on Si-integrated circuits are determined by X-ray fluorescence from photon excitation. The X-ray emission from electron excitation in an open X-ray tube instrument yields a sufficiently precise determination of the boron content. The thickness of the layer can be derived from silicon Kα-fluorescence. A calibration model is proposed for photon as well as for electron excitation. The experimentally determined parameters in this model well agree with those derived from fundamental parameters for X-ray absorption and emission. The chemical surrounding of silicon affects strongly the peak profile of the silicon Kβ-emission. This enables to distinguish emission from the silicon atoms in the wafer and from the silicon atoms in the silicon oxide complexes of the BPSG-layer. (author)

  16. Temperature dependency of silicon structures for magnetic field gradient sensing

    Science.gov (United States)

    Dabsch, Alexander; Rosenberg, Christoph; Stifter, Michael; Keplinger, Franz

    2018-02-01

    This work describes the temperature dependence of two sensors for magnetic field gradient sensors and demonstrates a structure to compensate for the drift of resonance frequency over a wide temperature range. The temperature effect of the sensing element is based on internal stresses induced by the thermal expansion of material, therefore FEM is used to determine the change of the eigenvalues of the sensing structure. The experimental setup utilizes a Helmholtz coil system to generate the magnetic field and to excite the MEMS structure with Lorentz forces. The MEMS structure is placed on a plate heated with resistors and cooled by a Peltier element to control the plate temperature. In the second part, we describe how one can exploit temperature sensitivity for temperature measurements and we show the opportunity to include the temperature effect to increase the sensitivity of single-crystal silicon made flux density gradient sensors.

  17. Radiation emission phenomena in bent silicon crystals: Theoretical and experimental studies with 120 GeV/c positrons

    International Nuclear Information System (INIS)

    Lietti, D.; Bagli, E.; Baricordi, S.; Berra, A.; Bolognini, D.; Chirkov, P.N.; Dalpiaz, P.; Della Mea, G.; De Salvador, D.; Hasan, S.; Guidi, V.; Maisheev, V.A.

    2012-01-01

    The radiation emission phenomena in bent silicon crystals have been thoroughly investigated at the CERN SPS-H4 beamline. The incoming and outgoing trajectories of charged particles impinging on a silicon strip crystal have been reconstructed by high precision silicon microstrip detectors. A spectrometer method has been exploited to measure the radiation emission spectra both in volume reflection and in channeling. The theoretical method used to evaluate the photon spectra is presented and compared with the experimental results.

  18. High-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures

    Science.gov (United States)

    Gupta, Bipin Kumar; Kedawat, Garima; Gangwar, Amit Kumar; Nagpal, Kanika; Kashyap, Pradeep Kumar; Srivastava, Shubhda; Singh, Satbir; Kumar, Pawan; Suryawanshi, Sachin R.; Seo, Deok Min; Tripathi, Prashant; More, Mahendra A.; Srivastava, O. N.; Hahm, Myung Gwan; Late, Dattatray J.

    2018-01-01

    The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 °C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness) as a barrier layer and iron (Fe, 1.5 nm thickness) as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM) images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2-30 walls with an inner diameter of 3-8 nm. Raman spectrum analysis shows G-band at 1580 cm-1 and D-band at 1340 cm-1. The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm2 at 1.2V/μm), low turn-on field (0.6 V/μm) and field enhancement factor (6917) with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources.

  19. High-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures

    Directory of Open Access Journals (Sweden)

    Bipin Kumar Gupta

    2018-01-01

    Full Text Available The vertical aligned carbon nanotubes (CNTs-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si wafer substrate at 775 °C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness as a barrier layer and iron (Fe, 1.5 nm thickness as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2–30 walls with an inner diameter of 3–8 nm. Raman spectrum analysis shows G-band at 1580 cm−1 and D-band at 1340 cm−1. The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm2 at 1.2V/μm, low turn-on field (0.6 V/μm and field enhancement factor (6917 with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources.

  20. Silicon Mie resonators for highly directional light emission from monolayer MoS2

    Science.gov (United States)

    Cihan, Ahmet Fatih; Curto, Alberto G.; Raza, Søren; Kik, Pieter G.; Brongersma, Mark L.

    2018-05-01

    Controlling light emission from quantum emitters has important applications, ranging from solid-state lighting and displays to nanoscale single-photon sources. Optical antennas have emerged as promising tools to achieve such control right at the location of the emitter, without the need for bulky, external optics. Semiconductor nanoantennas are particularly practical for this purpose because simple geometries such as wires and spheres support multiple, degenerate optical resonances. Here, we start by modifying Mie scattering theory developed for plane wave illumination to describe scattering of dipole emission. We then use this theory and experiments to demonstrate several pathways to achieve control over the directionality, polarization state and spectral emission that rely on a coherent coupling of an emitting dipole to optical resonances of a silicon nanowire. A forward-to-backward ratio of 20 was demonstrated for the electric dipole emission at 680 nm from a monolayer MoS2 by optically coupling it to a silicon nanowire.

  1. Photon-Enhanced Thermionic Emission in Cesiated p-Type and n-Type Silicon

    DEFF Research Database (Denmark)

    Reck, Kasper; Dionigi, Fabio; Hansen, Ole

    2014-01-01

    electrons. Efficiencies above 60% have been predicted theoretically for high solar concentration systems. Silicon is an interesting absorber material for high efficiency PETE solar cells, partly due to its mechanical and thermal properties and partly due to its electrical properties, including a close......Photon-enhanced thermionic emission (PETE) is a relatively new concept for high efficiency solar cells that utilize not only the energy of electrons excited across the band gap by photons, as in conventional photovoltaic solar cells, but also the energy usual lost to thermalization of the excited...... to ideal band gap. The work function of silicon is, however, too high for practical PETE implementations. A well-known method for lowering the work function of silicon (and other materials) is to apply approximately a monolayer of cesium to the silicon surface. We present the first measurements of PETE...

  2. Tin - an unlikely ally for silicon field effect transistors?

    KAUST Repository

    Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo T.; Schwingenschlö gl, Udo; Hussain, Muhammad Mustafa

    2014-01-01

    We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows

  3. The influence of oxidation properties on the electron emission characteristics of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    He, Li [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Zhang, Xiaoning, E-mail: znn@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Wang, Wenjiang [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Wei, Haicheng [School of Electrical and Information Engineering, Beifang University of Nationalities, Yinchuan750021 (China)

    2016-09-30

    Highlights: • Evaluated the oxidation properties of porous silicon from semi-quantitative methods. • Discovered the relationship between oxidation properties and emission characteristics. • Revealed the micro-essence of the electron emission of the porous silicon. - Abstract: In order to investigate the influence of oxidation properties such as oxygen content and its distribution gradient on the electron emission characteristics of porous silicon (PS) emitters, emitters with PS thickness of 8 μm, 5 μm, and 3 μm were prepared and then oxidized by electrochemical oxidation (ECO) and ECO-RTO (rapid thermal oxidation) to get different oxidation properties. The experimental results indicated that the emission current density, efficiency, and stability of the PS emitters are mainly determined by oxidation properties. The higher oxygen content and the smaller oxygen distribution gradient in the PS layer, the larger emission current density and efficiency we noted. The most favorable results occurred for the PS emitter with the smallest oxygen distribution gradient and the highest level of oxygen content, with an emission current density of 212.25 μA/cm{sup 2} and efficiency of 59.21‰. Additionally, it also demonstrates that thick PS layer benefits to the emission stability due to its longer electron acceleration tunnel. The FN fitting plots indicated that the effective emission areas of PS emitters can be enlarged and electron emission thresholds is decreased because of the higher oxygen content and smaller distribution gradient, which were approved by the optical micrographs of top electrode of PS emitters before and after electron emission.

  4. The influence of oxidation properties on the electron emission characteristics of porous silicon

    International Nuclear Information System (INIS)

    He, Li; Zhang, Xiaoning; Wang, Wenjiang; Wei, Haicheng

    2016-01-01

    Highlights: • Evaluated the oxidation properties of porous silicon from semi-quantitative methods. • Discovered the relationship between oxidation properties and emission characteristics. • Revealed the micro-essence of the electron emission of the porous silicon. - Abstract: In order to investigate the influence of oxidation properties such as oxygen content and its distribution gradient on the electron emission characteristics of porous silicon (PS) emitters, emitters with PS thickness of 8 μm, 5 μm, and 3 μm were prepared and then oxidized by electrochemical oxidation (ECO) and ECO-RTO (rapid thermal oxidation) to get different oxidation properties. The experimental results indicated that the emission current density, efficiency, and stability of the PS emitters are mainly determined by oxidation properties. The higher oxygen content and the smaller oxygen distribution gradient in the PS layer, the larger emission current density and efficiency we noted. The most favorable results occurred for the PS emitter with the smallest oxygen distribution gradient and the highest level of oxygen content, with an emission current density of 212.25 μA/cm"2 and efficiency of 59.21‰. Additionally, it also demonstrates that thick PS layer benefits to the emission stability due to its longer electron acceleration tunnel. The FN fitting plots indicated that the effective emission areas of PS emitters can be enlarged and electron emission thresholds is decreased because of the higher oxygen content and smaller distribution gradient, which were approved by the optical micrographs of top electrode of PS emitters before and after electron emission.

  5. Simulation and Optimization of Silicon Solar Cell Back Surface Field

    Directory of Open Access Journals (Sweden)

    Souad TOBBECHE

    2015-11-01

    Full Text Available In this paper, TCAD Silvaco (Technology Computer Aided Design software has been used to study the Back Surface Field (BSF effect of a p+ silicon layer for a n+pp+ silicon solar cell. To study this effect, the J-V characteristics and the external quantum efficiency (EQE are simulated under AM 1.5 illumination for two types of cells. The first solar cell is without BSF (n+p structure while the second one is with BSF (n+pp+ structure. The creation of the BSF on the rear face of the cell results in efficiency h of up to 16.06% with a short-circuit current density Jsc = 30.54 mA/cm2, an open-circuit voltage Voc = 0.631 V, a fill factor FF = 0.832 and a clear improvement of the spectral response obtained in the long wavelengths range. An electric field and a barrier of potential are created by the BSF and located at the junction p+/p with a maximum of 5800 V/cm and 0.15 V, respectively. The optimization of the BSF layer shows that the cell performance improves with the p+ thickness between 0.35 – 0.39 µm, the p+ doping dose is about 2 × 1014 cm-2, the maximum efficiency up to 16.19 %. The cell efficiency is more sensitive to the value of the back surface recombination velocity above a value of 103 cm/s in n+p than n+pp+ solar cell.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9565

  6. Strained silicon/silicon germanium heterojunction n-channel metal oxide semiconductor field effect transistors

    International Nuclear Information System (INIS)

    Olsen, Sarah H.

    2002-01-01

    Investigations into the performance of strained silicon/silicon-germanium (Si/SiGe) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) have been carried out. Theoretical predictions suggest that use of a strained Si/SiGe material system with advanced material properties compared with conventional silicon allows enhanced MOSFET device performance. This study has therefore investigated the practical feasibility of obtaining superior electrical performance using a Si/SiGe material system. The MOSFET devices consisted of a strained Si surface channel and were fabricated on relaxed SiGe material using a reduced thermal budget process in order to preserve the strain. Two batches of strained Si/SiGe devices fabricated on material grown by differing methods have been analysed and both showed good transistor action. A correlation of electrical and physical device data established that the electrical device behaviour was closely related to the SiGe material quality, which differed depending on growth technique. The cross-wafer variation in the electrical performance of the strained Si/SiGe devices was found to be a function of material quality, thus the viability of Si/SiGe MOSFET technology for commercial applications has been addressed. Of particular importance was the finding that large-scale 'cross-hatching' roughness associated with relaxed SiGe alloys led to degradation in the small-scale roughness at the gate oxide interface, which affects electrical device performance. The fabrication of strained Si MOSFET devices on high quality SiGe material thus enabled significant performance gains to be realised compared with conventional Si control devices. In contrast, the performance of devices fabricated on material with severe cross-hatching roughness was found to be diminished by the nanoscale oxide interface roughness. The effect of device processing on SiGe material with differing as-grown roughness has been carried out and compared with the reactions

  7. Process control of high rate microcrystalline silicon based solar cell deposition by optical emission spectroscopy

    International Nuclear Information System (INIS)

    Kilper, T.; Donker, M.N. van den; Carius, R.; Rech, B.; Braeuer, G.; Repmann, T.

    2008-01-01

    Silicon thin-film solar cells based on microcrystalline silicon (μc-Si:H) were prepared in a 30 x 30 cm 2 plasma-enhanced chemical vapor deposition reactor using 13.56 or 40.68 MHz plasma excitation frequency. Plasma emission was recorded by optical emission spectroscopy during μc-Si:H absorber layer deposition at deposition rates between 0.5 and 2.5 nm/s. The time course of SiH * and H β emission indicated strong drifts in the process conditions particularly at low total gas flows. By actively controlling the SiH 4 gas flow, the observed process drifts were successfully suppressed resulting in a more homogeneous i-layer crystallinity along the growth direction. In a deposition regime with efficient usage of the process gas, the μc-Si:H solar cell efficiency was enhanced from 7.9 % up to 8.8 % by applying process control

  8. Strong white light emission from a processed porous silicon and its photoluminescence mechanism

    International Nuclear Information System (INIS)

    Karacali, T.; Cicek, K.

    2011-01-01

    We have prepared various porous silicon (PS) structures with different surface conditions (any combination of oxidation, carbonization as well as thermal annealing) to increase the intensity of photoluminescence (PL) spectrum in the visible range. Strong white light (similar to day-light) emission was achieved by carrying out thermal annealing at 1100 deg. C after surface modification with 1-decene of anodic oxidized PS structures. Temperature-dependent PL measurements were first performed by gradually increasing the sample temperature from 10 to 300 K inside a cryostat. Then, we analyzed the measured spectrum of all prepared samples. After the analysis, we note that throughout entire measured spectrum, only two main peaks corresponding to blue and green-orange emission lines (which can be interpreted by quantum size effect and/or configuration coordinate model) were seem to be predominant for all temperature range. To further reveal and analysis these peaks, finally, measured data were inputted into the formula of activation energy of thermal excitation. We found that activation energies of blue and green-orange lines were approximately 49.3 and 44.6 meV, respectively. - Highlights: →Light emitting devices based on silicon technology are of great interest in illumination and display applications. → We have achieved strong white light (similar to day-light) emission from porous silicon. → The most important impact of carbonization on porous silicon and post annealing is the enhancement of room temperature luminescence.

  9. Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Taghizadeh, Alireza

    2015-01-01

    into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS compatible processes. It has......We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light...

  10. Carbon nanowalls in field emission cathodes

    Directory of Open Access Journals (Sweden)

    Belyanin A. F.

    2017-12-01

    Full Text Available The carbon nanowall (CNW layers were grown from a gas mixture of hydrogen and methane, activated by a DC glow discharge, on Si substrates (Si/CNW layered structure. The second layer of CNW was grown either on the first layer (Si/CNW/CNW structure or on Ni or NiO films deposited on the first CNW layer (Si/CNW/Ni/CNW and Si/CNW/NiO/CNW structures. The composition and structure of the resulting layered structures were studied using scanning electron microscopy, Raman spectroscopy, and X-ray diffractometry. It was found that annealing of Si/CNW structure in vacuum, growing of the second CNW layer on Si/CNW, as well as deposition of Ni or NiO films prior to the growing of the second CNW layer improve functional properties of field emission cathodes based on the electron-emitting CNW layers.

  11. Magnetic Field Effect on Ultrashort Two-dimensional Optical Pulse Propagation in Silicon Nanotubes

    Science.gov (United States)

    Konobeeva, N. N.; Evdokimov, R. A.; Belonenko, M. B.

    2018-05-01

    The paper deals with the magnetic field effect which provides a stable propagation of ultrashort pulses in silicon nanotubes from the viewpoint of their waveform. The equation is derived for the electromagnetic field observed in silicon nanotubes with a glance to the magnetic field for two-dimensional optical pulses. The analysis is given to the dependence between the waveform of ultrashort optical pulses and the magnetic flux passing through the cross-sectional area of the nanotube.

  12. Silicon nanocrystal-based photonic crystal slabs with broadband and efficient directional light emission

    Czech Academy of Sciences Publication Activity Database

    Ondič, Lukáš; Varga, Marián; Pelant, Ivan; Valenta, J.; Kromka, Alexander; Elliman, R. G.

    2017-01-01

    Roč. 7, č. 1 (2017), s. 1-8, č. článku 5763. ISSN 2045-2322 R&D Projects: GA ČR GJ16-09692Y; GA MŠk(CZ) LD15003 Institutional support: RVO:68378271 Keywords : photonic crystal slab * silicon nanocrystals * light emission Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 4.259, year: 2016

  13. Zero-field optical magnetic resonance study of phosphorus donors in 28-silicon

    Science.gov (United States)

    Morse, Kevin J.; Dluhy, Phillip; Huber, Julian; Salvail, Jeff Z.; Saeedi, Kamyar; Riemann, Helge; Abrosimov, Nikolay V.; Becker, Peter; Pohl, Hans-Joachim; Simmons, S.; Thewalt, M. L. W.

    2018-03-01

    Donor spins in silicon are some of the most promising qubits for upcoming solid-state quantum technologies. The nuclear spins of phosphorus donors in enriched silicon have among the longest coherence times of any solid-state system as well as simultaneous high fidelity qubit initialization, manipulation, and readout. Here we characterize the phosphorus in silicon system in the regime of "zero" magnetic field, where a singlet-triplet spin clock transition can be accessed, using laser spectroscopy and magnetic resonance methods. We show the system can be optically hyperpolarized and has ˜10 s Hahn echo coherence times, even for applied static magnetic fields below Earth's field.

  14. Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

    KAUST Repository

    Montes Muñ oz, Enrique; Schwingenschlö gl, Udo

    2017-01-01

    We investigate the electronic transport properties of silicon nanotubes attached to metallic electrodes from first principles, using density functional theory and the non-equilibrium Green's function method. The influence of the surface termination

  15. High impact ionization rate in silicon by sub-picosecond THz electric field pulses (Conference Presentation)

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Hirori, Hideki

    2017-01-01

    Summary form only given. Metallic antenna arrays fabricated on high resistivity silicon are used to localize and enhance the incident THz field resulting in high electric field pulses with peak electric field strength reaching several MV/cm on the silicon surface near the antenna tips. In such high...... electric field strengths high density of carriers are generated in silicon through impact ionization process. The high density of generated carriers induces a change of refractive index in silicon. By measuring the change of reflectivity of tightly focused 800 nm light, the local density of free carriers...... near the antenna tips is measured. Using the NIR probing technique, we observed that the density of carriers increases by over 8 orders of magnitude in a time duration of approximately 500 fs with an incident THz pulse of peak electric field strength 700 kV/cm. This shows that a single impact...

  16. Modified spontaneous emission of silicon nanocrystals embedded in artificial opals

    Science.gov (United States)

    Janda, Petr; Valenta, Jan; Rehspringer, Jean-Luc; Mafouana, Rodrigue R.; Linnros, Jan; Elliman, Robert G.

    2007-10-01

    Si nanocrystals (NCs) were embedded in synthetic silica opals by means of Si-ion implantation or opal impregnation with porous-Si suspensions. In both types of sample photoluminescence (PL) is strongly Bragg-reflection attenuated (up to 75%) at the frequency of the opal stop-band in a direction perpendicular to the (1 1 1) face of the perfect hcp opal structure. Time-resolved PL shows a rich distribution of decay rates, which contains both shorter and longer decay components compared with the ordinary stretched exponential decay of Si NCs. This effect reflects changes in the spontaneous emission rate of Si NCs due to variations in the local density of states of real opal containing defects.

  17. Modified spontaneous emission of silicon nanocrystals embedded in artificial opals

    International Nuclear Information System (INIS)

    Janda, Petr; Valenta, Jan; Rehspringer, Jean-Luc; Mafouana, Rodrigue R; Linnros, Jan; Elliman, Robert G

    2007-01-01

    Si nanocrystals (NCs) were embedded in synthetic silica opals by means of Si-ion implantation or opal impregnation with porous-Si suspensions. In both types of sample photoluminescence (PL) is strongly Bragg-reflection attenuated (up to 75%) at the frequency of the opal stop-band in a direction perpendicular to the (1 1 1) face of the perfect hcp opal structure. Time-resolved PL shows a rich distribution of decay rates, which contains both shorter and longer decay components compared with the ordinary stretched exponential decay of Si NCs. This effect reflects changes in the spontaneous emission rate of Si NCs due to variations in the local density of states of real opal containing defects

  18. Modified spontaneous emission of silicon nanocrystals embedded in artificial opals

    Energy Technology Data Exchange (ETDEWEB)

    Janda, Petr [Department of Chemical Physics and Optics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Valenta, Jan [Department of Chemical Physics and Optics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Rehspringer, Jean-Luc [Institut de Physique et Chimie des Materiaux de Strasbourg, GMI et GONLO, UMR46 CNRS-ULP-ECPM, 23, rue du Loess, F-67037 Strasbourg (France); Mafouana, Rodrigue R [Institut de Physique et Chimie des Materiaux de Strasbourg, GMI et GONLO, UMR46 CNRS-ULP-ECPM, 23, rue du Loess, F-67037 Strasbourg (France); Linnros, Jan [Laboratory of Material and Semiconductor Physics, Royal Institute of Technology, Electrum 229, 164 21 Kista-Stockholm (Sweden); Elliman, Robert G [Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200 (Australia)

    2007-10-07

    Si nanocrystals (NCs) were embedded in synthetic silica opals by means of Si-ion implantation or opal impregnation with porous-Si suspensions. In both types of sample photoluminescence (PL) is strongly Bragg-reflection attenuated (up to 75%) at the frequency of the opal stop-band in a direction perpendicular to the (1 1 1) face of the perfect hcp opal structure. Time-resolved PL shows a rich distribution of decay rates, which contains both shorter and longer decay components compared with the ordinary stretched exponential decay of Si NCs. This effect reflects changes in the spontaneous emission rate of Si NCs due to variations in the local density of states of real opal containing defects.

  19. Visible light emission from silicon implanted and annealed SiO2layers

    International Nuclear Information System (INIS)

    Ghislotti, G.; Nielsen, B.; Asoka-Kumar, P.; Lynn, K.G.; Di Mauro, L.F.; Bottani, C.E.; Corni, F.; Tonini, R.; Ottaviani, G.P.

    1997-01-01

    Silicon implanted and annealed SiO 2 layers are studied using photoluminescence (PL) and positron annihilation spectroscopy (PAS). Two PL emission bands are observed. A band centered at 560 nm is present in as-implanted samples and it is still observed after 1,000 C annealing. The emission time is fast. A second band centered at 780 nm is detected after 1,000 C annealing. The intensity of the 780 nm band further increased when hydrogen annealing was performed. The emission time is long (1 micros to 0.2 ms). PAS results show that defects produced by implantation anneal at 600 C. Based on the annealing behavior and on the emission times, the origin of the two bands is discussed

  20. Role of adsorbates on current fluctuations in DC field emission

    International Nuclear Information System (INIS)

    Luong, M.; Bonin, B.; Long, H.; Safa, H.

    1996-01-01

    Field emission experiments in DC regime usually show important current fluctuations for a fixed electric field. These fluctuations are attributed to adsorbed layers (molecules or atoms), liable to affect the work function, height and shape of the potential barrier binding the electron in the metal. The role of these adsorbed species is investigated by showing that the field emission from a well desorbed sample is stable and reproducible and by comparing the emission from the same sample before and after desorption. (author)

  1. Field emission of carbon nanotubes grown on nickel substrate

    International Nuclear Information System (INIS)

    Hu Yemin; Huo Kaifu; Chen Hong; Lu Yinong; Xu Li; Hu Zheng; Chen Yi

    2006-01-01

    Carbon nanotubes (CNTs) have been synthesized directly on the electrically conducting nickel substrate without additional catalyst. Field emission properties of the as-prepared sample were characterized using parallel plate diode configurations. It was observed that the field emission qualitatively follows the conventional Fowler-Nordheim (F-N) theory from the straight line of ln(I/V 2 ) versus 1/V plot at the high applied field region. The uniformity and stability of the electron emission have also been examined. The low electron turn-on field (E to ) and high emission current density indicates the potential applications of this new CNT-based emitter

  2. On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    M. Aceves-Mijares

    2012-01-01

    Full Text Available Silicon Rich Oxide (SRO has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD. In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.

  3. Surface properties and field emission characteristics of chemical vapor deposition diamond grown on Fe/Si substrates

    International Nuclear Information System (INIS)

    Hirakuri, Kenji; Yokoyama, Takahiro; Enomoto, Hirofumi; Mutsukura, Nobuki; Friedbacher, Gernot

    2001-01-01

    Electron field emission characteristics of diamond grains fabricated on iron dot-patterned silicon (Fe/Si) substrates at different methane concentrations have been investigated. The characteristics of the samples could be improved by control of the methane concentration during diamond fabrication. Etching treatment of the as-grown diamond has enhanced the emission properties both with respect to current and threshold voltage. In order to study the influence of etching effects on the field emission characteristics, the respective surfaces were studied by Raman spectroscopy, Auger electron spectroscopy, and electron spectroscopy for chemical analysis (ESCA). ESCA revealed intensive graphite and FeO x peaks on the sample surface grown at high methane concentration. For the etched samples, the peaks of diamond and silicon carbide were observed, and the peaks of nondiamond carbon disappeared. The experimental results show that the etching process removes graphitic and nondiamond carbon components. [copyright] 2001 American Institute of Physics

  4. Realisation of a ultra-high vacuum system and technique development of microscopical emitters preparation in silicium. First measurements of field emission current and field photoemission

    International Nuclear Information System (INIS)

    El Manouni, A.

    1990-12-01

    The development of research in the domain of photocathode (electron sources) illuminated by laser light to produce intense multiple bunches of electrons in short time is needed by many applications as linear collider e + e - , free electron laser, lasertron, etc... In this way, after a study of field emission, of photoemission and of photofield emission, we prepared microscopical emitters in silicium heavy and weakly doped a boron using a technique of microlithography. Then, we realized a system of ultra-high vacuum of studying property of emission from photocathodes realized. The experiment results obtained in field emission and photofield emission have shown that a behaviour unexpected for P-silicium tips array compared to P + -silicon tips array. With P-type silicon, a quantum yield of 21 percent has been measured for laser power of 140 mW and for applied field of 1.125 x 10 7 V/m and an instantaneous response to laser light beam has been observed. It has been noted that presence of oxyde at the surface of photocathode limits extensively the emission current. The fluctuations of emission current are due to quality of vacuum [fr

  5. Effect of annealing on field emission properties of nanodiamond coating

    International Nuclear Information System (INIS)

    Zhai, C.X.; Yun, J.N.; Zhao, L.L.; Zhang, Z.Y.; Wang, X.W.; Chen, Y.Y.

    2011-01-01

    Field electron emission of detonation nanodiamond (ND) coated on a titanium substrate by electrophoretic deposition is investigated. It is found that thermal annealing can significantly improve the field emission properties of the ND layer, which can be mainly attributed to the formation of the TiC phase between diamond and Ti. The first-principles calculated results show that the formation of transition layers can lower the interface barrier and enhance the field electron emission of ND coating. Besides, the transformation of diamond to graphite after annealing has been revealed by Raman spectra. This transformation also benefits the electron emission enhancement.

  6. Effect of annealing on field emission properties of nanodiamond coating

    Energy Technology Data Exchange (ETDEWEB)

    Zhai, C.X., E-mail: zhaicatty@126.co [School of Information Science and Technology, Northwest University, Xi' an 710127, Shaanxi (China); Yun, J.N.; Zhao, L.L.; Zhang, Z.Y.; Wang, X.W.; Chen, Y.Y. [School of Information Science and Technology, Northwest University, Xi' an 710127, Shaanxi (China)

    2011-03-01

    Field electron emission of detonation nanodiamond (ND) coated on a titanium substrate by electrophoretic deposition is investigated. It is found that thermal annealing can significantly improve the field emission properties of the ND layer, which can be mainly attributed to the formation of the TiC phase between diamond and Ti. The first-principles calculated results show that the formation of transition layers can lower the interface barrier and enhance the field electron emission of ND coating. Besides, the transformation of diamond to graphite after annealing has been revealed by Raman spectra. This transformation also benefits the electron emission enhancement.

  7. Broadband enhancement of single photon emission and polarization dependent coupling in silicon nitride waveguides.

    Science.gov (United States)

    Bisschop, Suzanne; Guille, Antoine; Van Thourhout, Dries; Hens, Zeger; Brainis, Edouard

    2015-06-01

    Single-photon (SP) sources are important for a number of optical quantum information processing applications. We study the possibility to integrate triggered solid-state SP emitters directly on a photonic chip. A major challenge consists in efficiently extracting their emission into a single guided mode. Using 3D finite-difference time-domain simulations, we investigate the SP emission from dipole-like nanometer-sized inclusions embedded into different silicon nitride (SiNx) photonic nanowire waveguide designs. We elucidate the effect of the geometry on the emission lifetime and the polarization of the emitted SP. The results show that highly efficient and polarized SP sources can be realized using suspended SiNx slot-waveguides. Combining this with the well-established CMOS-compatible processing technology, fully integrated and complex optical circuits for quantum optics experiments can be developed.

  8. Electron field emission from boron doped microcrystalline diamond

    International Nuclear Information System (INIS)

    Roos, M.; Baranauskas, V.; Fontana, M.; Ceragioli, H.J.; Peterlevitz, A.C.; Mallik, K.; Degasperi, F.T.

    2007-01-01

    Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N B ) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E th ) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm -2 were obtained using electric fields less than 8 V/μm

  9. Research of the voltage and current stabilization processes by using the silicon field-effect transistor

    International Nuclear Information System (INIS)

    Karimov, A.V.; Yodgorova, D.M.; Kamanov, B.M.; Giyasova, F.A.; Yakudov, A.A.

    2012-01-01

    The silicon field-effect transistors were investigated to use in circuits for stabilization of current and voltage. As in gallium arsenide field-effect transistors, in silicon field-effect transistors with p-n-junction a new mechanism of saturation of the drain current is experimentally found out due to both transverse and longitudinal compression of channel by additional resistance between the source and the gate of the transistor. The criteria for evaluating the coefficients of stabilization of transient current suppressors and voltage stabilizator based on the field-effect transistor are considered. (authors)

  10. Field emission from the surface of highly ordered pyrolytic graphite

    Energy Technology Data Exchange (ETDEWEB)

    Knápek, Alexandr, E-mail: knapek@isibrno.cz [Institute of Scientific Instruments of the ASCR, v.v.i., Královopolská 147, Brno (Czech Republic); Sobola, Dinara; Tománek, Pavel [Department of Physics, FEEC, Brno University of Technology, Technická 8, Brno (Czech Republic); Pokorná, Zuzana; Urbánek, Michal [Institute of Scientific Instruments of the ASCR, v.v.i., Královopolská 147, Brno (Czech Republic)

    2017-02-15

    Highlights: • HOPG shreds were created and analyzed in the UHV conditions. • Current-voltage measurements have been done to confirm electron tunneling, based on the Fowler-Nordheim theory. • Surface was characterized by other surface evaluation methods, in particular by: SNOM, SEM and AFM. - Abstract: This paper deals with the electrical characterization of highly ordered pyrolytic graphite (HOPG) surface based on field emission of electrons. The effect of field emission occurs only at disrupted surface, i.e. surface containing ripped and warped shreds of the uppermost layers of graphite. These deformations provide the necessary field gradients which are required for measuring tunneling current caused by field electron emission. Results of the field emission measurements are correlated with other surface characterization methods such as scanning near-field optical microscopy (SNOM) or atomic force microscopy.

  11. Field emission from the surface of highly ordered pyrolytic graphite

    International Nuclear Information System (INIS)

    Knápek, Alexandr; Sobola, Dinara; Tománek, Pavel; Pokorná, Zuzana; Urbánek, Michal

    2017-01-01

    Highlights: • HOPG shreds were created and analyzed in the UHV conditions. • Current-voltage measurements have been done to confirm electron tunneling, based on the Fowler-Nordheim theory. • Surface was characterized by other surface evaluation methods, in particular by: SNOM, SEM and AFM. - Abstract: This paper deals with the electrical characterization of highly ordered pyrolytic graphite (HOPG) surface based on field emission of electrons. The effect of field emission occurs only at disrupted surface, i.e. surface containing ripped and warped shreds of the uppermost layers of graphite. These deformations provide the necessary field gradients which are required for measuring tunneling current caused by field electron emission. Results of the field emission measurements are correlated with other surface characterization methods such as scanning near-field optical microscopy (SNOM) or atomic force microscopy.

  12. Improvement of electron emission characteristics of porous silicon emitter by using cathode reduction and electrochemical oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Li, He; Wenjiang, Wang, E-mail: wwj@mail.xjtu.edu.cn; Xiaoning, Zhang

    2017-03-31

    Highlights: • An electron emitter based on porous silicon having the strong application potential was prepared in the studying. • A new simple and convenient post-treat technique was proposed to improve the electron emission properties of the PS emitter. • It demonstrated that the improving of the PS morphology and the oxygen distribution is very important to the PS emitter. - Abstract: A new simple and convenient post-treat technique combined the cathode reduction (CR) and electrochemical oxidation (ECO) was proposed to improve the electron emission properties of the surface-emitting cold cathodes based on the porous silicon (PS). It is demonstrated here that by introducing this new technique combined CR and ECO, the emission properties of the diode have been significantly improved than those as-prepared samples. The experimental results showed that the emission current densities and efficiencies of sample treated by CR were 62 μA/cm{sup 2} and 12.10‰, respectively, nearly 2 orders of magnitude higher than those of as-prepared sample. Furthermore, the CR-treated PS emitter shows higher repeatability and stability compared with the as-prepared PS emitter. The scanning electron microscope (SEM), atomic force microscope (AFM), energy dispersive spectrometer (EDS), furier transformed infrared (FTIR) spectroscopy results indicated that the improved mechanism is mainly due to the passivation of the PS, which not only improve the PS morphology by the passivation of the H{sup +} but also improve the uniformity of the oxygen content distribution in the whole PS layer. Therefore, the method combined the CR treatment and ECO is expected to be a valuable technique to enhance the electron emission characteristics of the PS emitter.

  13. Improvement of electron emission characteristics of porous silicon emitter by using cathode reduction and electrochemical oxidation

    International Nuclear Information System (INIS)

    Li, He; Wenjiang, Wang; Xiaoning, Zhang

    2017-01-01

    Highlights: • An electron emitter based on porous silicon having the strong application potential was prepared in the studying. • A new simple and convenient post-treat technique was proposed to improve the electron emission properties of the PS emitter. • It demonstrated that the improving of the PS morphology and the oxygen distribution is very important to the PS emitter. - Abstract: A new simple and convenient post-treat technique combined the cathode reduction (CR) and electrochemical oxidation (ECO) was proposed to improve the electron emission properties of the surface-emitting cold cathodes based on the porous silicon (PS). It is demonstrated here that by introducing this new technique combined CR and ECO, the emission properties of the diode have been significantly improved than those as-prepared samples. The experimental results showed that the emission current densities and efficiencies of sample treated by CR were 62 μA/cm"2 and 12.10‰, respectively, nearly 2 orders of magnitude higher than those of as-prepared sample. Furthermore, the CR-treated PS emitter shows higher repeatability and stability compared with the as-prepared PS emitter. The scanning electron microscope (SEM), atomic force microscope (AFM), energy dispersive spectrometer (EDS), furier transformed infrared (FTIR) spectroscopy results indicated that the improved mechanism is mainly due to the passivation of the PS, which not only improve the PS morphology by the passivation of the H"+ but also improve the uniformity of the oxygen content distribution in the whole PS layer. Therefore, the method combined the CR treatment and ECO is expected to be a valuable technique to enhance the electron emission characteristics of the PS emitter.

  14. Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

    Energy Technology Data Exchange (ETDEWEB)

    Zhukavin, R. Kh., E-mail: zhur@ipmras.ru; Kovalevsky, K. A.; Orlov, M. L.; Tsyplenkov, V. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Hübers, H.-W. [DLR Institute of Optical Sensor Systems (Germany); Dessmann, N. [Humboldt University of Berlin, Institute of Physics (Germany); Kozlov, D. V.; Shastin, V. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-11-15

    Experimental data on the spontaneous emission and absorption modulation in boron-doped silicon under CO{sub 2} laser excitation depending on the uniaxial stress applied along the [001] and [011] crystallographic directions are presented. Room-temperature radiation is used as the probe radiation. Low stress (less than 0.5 kbar) is shown to reduce losses in the terahertz region by 20%. The main contribution to absorption modulation at zero and low stress is made by A{sup +} centers. Intersubband free hole transitions additionally contribute to terahertz absorption at higher stress. These contributions can be minimized by compensation.

  15. Vertically aligned carbon nanotubes/diamond double-layered structure for improved field electron emission stability

    Energy Technology Data Exchange (ETDEWEB)

    Yang, L., E-mail: qiaoqin.yang@mail.usask.ca; Yang, Q.; Zhang, C.; Li, Y.S.

    2013-12-31

    A double-layered nanostructure consisting of a layer of vertically aligned Carbon Nanotubes (CNTs) and a layer of diamond beneath has been synthesized on silicon substrate by Hot Filament Chemical Vapor Deposition. The synthesis was achieved by first depositing a layer of diamond on silicon and then depositing a top layer of vertically aligned CNTs by applying a negative bias on the substrate holder. The growth of CNTs was catalyzed by a thin layer of spin-coated iron nitride. The surface morphology and structure of the CNTs/diamond double-layered structure were characterized by Scanning Electron Microscope, Energy Dispersive X-ray spectrum, and Raman Spectroscopy. Their field electron emission (FEE) properties were measured by KEITHLEY 237 high voltage measurement unit, showing much higher FEE current stability than single layered CNTs. - Highlights: • A new double-layered nanostructure consisting of a layer of vertically aligned CNTs and a layer of diamond beneath has been synthesized by hot filament chemical vapor deposition. • This double-layered structure exhibits superior field electron emission stability. • The improvement of emission stability is due to the combination of the unique properties of diamond and CNTs.

  16. Laser terahertz emission microscopy with near-field probes

    DEFF Research Database (Denmark)

    Pedersen, Pernille Klarskov; Mittleman, Daniel M.

    2016-01-01

    Using an AFM, an optical near-field image at 800 nm of a dipole antenna for THz emission is measured, and by simultaneously collecting the emitted THz radiation, the laser light confined under the AFM probe gives a THz emission resolution of less than 50 nm.......Using an AFM, an optical near-field image at 800 nm of a dipole antenna for THz emission is measured, and by simultaneously collecting the emitted THz radiation, the laser light confined under the AFM probe gives a THz emission resolution of less than 50 nm....

  17. Improved field emission properties of carbon nanotubes grown on stainless steel substrate and its application in ionization gauge

    Science.gov (United States)

    Li, Detian; Cheng, Yongjun; Wang, Yongjun; Zhang, Huzhong; Dong, Changkun; Li, Da

    2016-03-01

    Vertically aligned carbon nanotube (CNT) arrays were fabricated by chemical vapor deposition (CVD) technique on different substrates. Microstructures and field emission characteristics of the as-grown CNT arrays were investigated systematically, and its application in ionization gauge was also evaluated preliminarily. The results indicate that the as-grown CNT arrays are vertically well-aligned relating to the substrate surfaces, but the CNTs grown on stainless steel substrate are longer and more crystalline than the ones grown on silicon wafer substrate. The field emission behaviors of the as-grown CNT arrays are strongly dependent upon substrate properties. Namely, the CNT array grown on stainless steel substrate has better field emission properties, including lower turn on and threshold fields, better emission stability and repeatability, compared with the one grown on silicon wafer substrate. The superior field emission properties of the CNT array grown on stainless steel substrate are mainly attributed to low contact resistance, high thermal conductivity, good adhesion strength, etc. In addition, the metrological behaviors of ionization gauge with the CNT array grown on stainless steel substrate as an electron source were investigated, and this novel cathode ionization gauge extends the lower limit of linear pressure measurement to 10-8 Pa, which is one order of magnitude lower than the result reported for the same of gauge with CNT cathode.

  18. Comparative Study on Electronic, Emission, Spontaneous Property of Porous Silicon in Different Solvents

    Directory of Open Access Journals (Sweden)

    M. Naziruddin Khan

    2014-01-01

    Full Text Available Luminescent porous silicon (Psi fabricated by simple chemical etching technique in different organic solvents was studied. By quantifying the silicon wafer piece, optical properties of the Psi in solutions were investigated. Observation shows that no photoluminescence light of Psi in all solvents is emitted. Morphology of Psi in different solvents indicates that the structure and distribution of Psi are differently observed. Particles are uniformly dispersive with the sizes around more or less 5–8 nm. The crystallographic plane and high crystalline nature of Psi is observed by selected area diffraction (SED and XRD. Electronic properties of Psi in solutions are influenced due to the variation of quantity of wafer and nature of solvent. Influence in band gaps of Psi calculated by Tauc’s method is obtained due to change of absorption edge of Psi in solvents. PL intensities are observed to be depending on quantity of silicon wafer, etched cross-section area on wafer surface. Effects on emission peaks and bands of Psi under temperature annealing are observed. The spontaneous signals of Psi measured under high power Pico second laser 355 nm source are significant, influenced by the nature of solvent, pumped energy, and quantity of Si wafer piece used in etching process.

  19. Electron field emission characteristics of carbon nanotube on tungsten tip

    International Nuclear Information System (INIS)

    Phan Ngoc Hong; Bui Hung Thang; Nguyen Tuan Hong; Phan Ngoc Minh; Lee, Soonil

    2009-01-01

    Electron field emission characteristic of carbon nanotubes on tungsten tip was investigated in 2x10 -6 Torr vacuum. The measurement results showed that the CNTs/W tip could emit electron at 0.7 V/μm (nearly 10 times lower than that of the W tip itself) and reach up to 26 μA at the electric field of 1 V/μm. The emission characteristic follows the Fowler-Nordheim mechanism. Analysis of the emission characteristic showed that the CNTs/W tip has a very high value of field enhancement factor (β = 4.1 x 10 4 cm -1 ) that is much higher than that of the tungsten tip itself. The results confirmed the excellent field emission behavior of the CNTs materials and the CNTs/W tip is a prospective candidate for advanced electron field emitter.

  20. Recent progress in nanostructured next-generation field emission devices

    International Nuclear Information System (INIS)

    Mittal, Gaurav; Lahiri, Indranil

    2014-01-01

    Field emission has been known to mankind for more than a century, and extensive research in this field for the last 40–50 years has led to development of exciting applications such as electron sources, miniature x-ray devices, display materials, etc. In the last decade, large-area field emitters were projected as an important material to revolutionize healthcare and medical devices, and space research. With the advent of nanotechnology and advancements related to carbon nanotubes, field emitters are demonstrating highly enhanced performance and novel applications. Next-generation emitters need ultra-high emission current density, high brightness, excellent stability and reproducible performance. Novel design considerations and application of new materials can lead to achievement of these capabilities. This article presents an overview of recent developments in this field and their effects on improved performance of field emitters. These advancements are demonstrated to hold great potential for application in next-generation field emission devices. (topical review)

  1. Recent progress in nanostructured next-generation field emission devices

    Science.gov (United States)

    Mittal, Gaurav; Lahiri, Indranil

    2014-08-01

    Field emission has been known to mankind for more than a century, and extensive research in this field for the last 40-50 years has led to development of exciting applications such as electron sources, miniature x-ray devices, display materials, etc. In the last decade, large-area field emitters were projected as an important material to revolutionize healthcare and medical devices, and space research. With the advent of nanotechnology and advancements related to carbon nanotubes, field emitters are demonstrating highly enhanced performance and novel applications. Next-generation emitters need ultra-high emission current density, high brightness, excellent stability and reproducible performance. Novel design considerations and application of new materials can lead to achievement of these capabilities. This article presents an overview of recent developments in this field and their effects on improved performance of field emitters. These advancements are demonstrated to hold great potential for application in next-generation field emission devices.

  2. Rf Gun with High-Current Density Field Emission Cathode

    International Nuclear Information System (INIS)

    Jay L. Hirshfield

    2005-01-01

    High current-density field emission from an array of carbon nanotubes, with field-emission-transistor control, and with secondary electron channel multiplication in a ceramic facing structure, have been combined in a cold cathode for rf guns and diode guns. Electrodynamic and space-charge flow simulations were conducted to specify the cathode configuration and range of emission current density from the field emission cold cathode. Design of this cathode has been made for installation and testing in an existing S-band 2-1/2 cell rf gun. With emission control and modulation, and with current density in the range of 0.1-1 kA/cm2, this cathode could provide performance and long-life not enjoyed by other currently-available cathodes

  3. Near-field optical microscope using a silicon-nitride probe

    NARCIS (Netherlands)

    van Hulst, N.F.; Moers, M.H.P.; Moers, M.H.P.; Noordman, O.F.J.; Noordman, O.F.J.; Tack, R.G.; Segerink, Franciscus B.; Bölger, B.; Bölger, B.

    1993-01-01

    Operation of an alternative near-field optical microscope is presented. The microscope uses a microfabricated silicon- nitride probe with integrated cantilever, as originally developed for force microscopy. The cantilever allows routine close contact near-field imaging o­n arbitrary surfaces without

  4. Tunnel Oxides Formed by Field-Induced Anodisation for Passivated Contacts of Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Jingnan Tong

    2018-02-01

    Full Text Available Tunnel silicon oxides form a critical component for passivated contacts for silicon solar cells. They need to be sufficiently thin to allow carriers to tunnel through and to be uniform both in thickness and stoichiometry across the silicon wafer surface, to ensure uniform and low recombination velocities if high conversion efficiencies are to be achieved. This paper reports on the formation of ultra-thin silicon oxide layers by field-induced anodisation (FIA, a process that ensures uniform oxide thickness by passing the anodisation current perpendicularly through the wafer to the silicon surface that is anodised. Spectroscopical analyses show that the FIA oxides contain a lower fraction of Si-rich sub-oxides compared to wet-chemical oxides, resulting in lower recombination velocities at the silicon and oxide interface. This property along with its low temperature formation highlights the potential for FIA to be used to form low-cost tunnel oxide layers for passivated contacts of silicon solar cells.

  5. Determination of impurities in silicon nitride by particle induced x-ray emission analysis

    International Nuclear Information System (INIS)

    Miyagawa, Yoshiko; Saito, Kazuo; Niwa, Hiroaki; Ishizuka, Toshio; Miyagawa, Soji

    1985-01-01

    A method is presented for quantitative particle induced X-ray emission (PIXE) analysis of impurities in the thick samples of silicon nitride. In the analysis of ceramic materials such as silicon nitride, chemical treatments are required to prepare thin enough samples. However, the chemical treatments are undesirable for the PIXE analysis, because another complications are brought about. Our method does not need any chemical treatments and thick samples can be subjected to the measurements. The determination of impurities were made by on-line use of a personal computer in which standard X-ray intensity data were stored. The method and procedures are as follows: After subtracting a buckground spectrum from an observed PIXE spectrum, the resultant peaks are assigned to individual elements. Then, in order to determine the contents of the impurities, the intensity of each peak is compared with a Gaussian curve which is generated from the standard X-ray intensity data. The latter data were determined theoretically. The results were in satisfactory agreement with those obtained by ICP emission spectrometry. (author)

  6. Application of field blanks in odour emission research

    NARCIS (Netherlands)

    Ogink, Nico W.M.; Klarenbeek, Johannes V.

    2016-01-01

    In the Netherlands field blanks are mandatory when sampling odour emission. Field blanks are matrices that have negligible or unmeasurable amounts of the substance of interest. They are used to document possible contamination during sampling, transport and storage of samples. Although field

  7. Low temperature synthesis and field emission characteristics of single to few layered graphene grown using PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Avshish; Khan, Sunny; Zulfequar, M.; Harsh; Husain, Mushahid, E-mail: mush_reslab@rediffmail.com

    2017-04-30

    Highlights: • Graphene was synthesized by PECVD system at a low temperature of 600 °C. • From different characterization techniques, the presence of single and few layered graphene was confirmed. • X-ray diffraction pattern of the graphene showed single crystalline nature of the film. • The as-grown graphene films were observed extremely good field emitters with long term emission current stability. - Abstract: In this work, high-quality graphene has successfully been synthesized on copper (Cu) coated Silicon (Si) substrate at very large-area by plasma enhanced chemical vapor deposition system. This method is low cost and highly effective for synthesizing graphene relatively at low temperature of 600 °C. Electron microscopy images have shown that surface morphology of the grown samples is quite uniform consisting of single layered graphene (SLG) to few layered graphene (FLG). Raman spectra reveal that graphene has been grown with high-quality having negligible defects and the observation of G and G' peaks is also an indicative of stokes phonon energy shift caused due to laser excitation. Scanning probe microscopy image also depicts the synthesis of single to few layered graphene. The field emission characteristics of as-grown graphene samples were studied in a planar diode configuration at room temperature. The graphene samples were observed to be a good field emitter having low turn-on field, higher field amplification factor and long term emission current stability.

  8. Negative ion emission at field electron emission from amorphous (alpha-C:H) carbon

    CERN Document Server

    Bernatskij, D P; Ivanov-Omskij, V I; Pavlov, V G; Zvonareva, T K

    2001-01-01

    The study on the electrons field emission from the plane cathode surface on the basis of the amorphous carbon film (alpha-C:H) is carried out. The methodology, making it possible to accomplish simultaneously the registration of the emission currents and visually observe the distribution of the emission centers on the plane emitter surface is developed. The analysis of the oscillograms indicated that apart from the proper electron constituent the negative ions of hydrogen (H sup - and H sub 2 sup -), carbon (C sup -) and hydrocarbon (CH sub n sup -) are observed. The ions emission is connected with the processes of formation and degradation of the local emission centers

  9. Two-dimensionally grown single-crystal silicon nanosheets with tunable visible-light emissions.

    Science.gov (United States)

    Kim, Sung Wook; Lee, Jaejun; Sung, Ji Ho; Seo, Dong-jae; Kim, Ilsoo; Jo, Moon-Ho; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2014-07-22

    Since the discovery of graphene, growth of two-dimensional (2D) nanomaterials has greatly attracted attention. However, spontaneous growth of atomic two-dimensional (2D) materials is limitedly permitted for several layered-structure crystals, such as graphene, MoS2, and h-BN, and otherwise it is notoriously difficult. Here we report the gas-phase 2D growth of silicon (Si), that is cubic in symmetry, via dendritic growth and an interdendritic filling mechanism and to form Si nanosheets (SiNSs) of 1 to 13 nm in thickness. Thin SiNSs show strong thickness-dependent photoluminescence in visible range including red, green, and blue (RGB) emissions with the associated band gap energies ranging from 1.6 to 3.2 eV; these emission energies were greater than those from Si quantum dots (SiQDs) of the similar sizes. We also demonstrated that electrically driven white, as well as blue, emission in a conventional organic light-emitting diode (OLED) geometry with the SiNS assembly as the active emitting layers. Tunable light emissions in visible range in our observations suggest practical implications for novel 2D Si nanophotonics.

  10. Fundamental properties of field emission-driven direct current microdischarges

    International Nuclear Information System (INIS)

    Rumbach, Paul; Go, David B.

    2012-01-01

    For half a century, it has been known that the onset of field emission in direct current microdischarges with gap sizes less than 10 μm can lead to breakdown at applied voltages far less than predicted by Paschen's law. It is still unclear how field emission affects other fundamental plasma properties at this scale. In this work, a one-dimensional fluid model is used to predict basic scaling laws for fundamental properties including ion density, electric field due to space charge, and current-voltage relations in the pre-breakdown regime. Computational results are compared with approximate analytic solutions. It is shown that field emission provides an abundance of cathode electrons, which in turn create large ion concentrations through ionizing collisions well before Paschen's criterion for breakdown is met. Breakdown due to ion-enhanced field emission occurs when the electric field due to space charge becomes comparable to the applied electric field. Simple scaling analysis of the 1D Poisson equation demonstrates that an ion density of n + ≈ 0.1V A ε 0 /qd 2 is necessary to significantly distort the electric field. Defining breakdown in terms of this critical ion density leads analytically to a simple, effective secondary emission coefficient γ ′ of the same mathematical form initially suggested by Boyle and Kisliuk [Phys. Rev. 97, 255 (1955)].

  11. Edge field emission of large-area single layer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Kleshch, Victor I., E-mail: klesch@polly.phys.msu.ru [Department of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Bandurin, Denis A. [Department of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Orekhov, Anton S. [Department of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); A.V. Shubnikov Institute of Crystallography, RAS, Moscow 119333 (Russian Federation); Purcell, Stephen T. [ILM, Université Claude Bernard Lyon 1 et CNRS, UMR 5586, 69622 Villeurbanne (France); Obraztsov, Alexander N. [Department of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Department of Physics and Mathematics, University of Eastern Finland, Joensuu 80101 (Finland)

    2015-12-01

    Graphical abstract: - Highlights: • Stable field emission was observed from the edge of large-area graphene on quartz. • A strong hysteresis in current–voltage characteristics was observed. • The hysteresis was explained by mechanical peeling of graphene edge from substrate. • Reversible peeling of graphene edge may be used in microelectromechanical systems. - Abstract: Field electron emission from the edges of large-area (∼1 cm × 1 cm) graphene films deposited onto quartz wafers was studied. The graphene was previously grown by chemical vapour deposition on copper. An extreme enhancement of electrostatic field at the edge of the films with macroscopically large lateral dimensions and with single atom thickness was achieved. This resulted in the creation of a blade type electron emitter, providing stable field emission at low-voltage with linear current density up to 0.5 mA/cm. A strong hysteresis in current–voltage characteristics and a step-like increase of the emission current during voltage ramp up were observed. These effects were explained by the local mechanical peeling of the graphene edge from the quartz substrate by the ponderomotive force during the field emission process. Specific field emission phenomena exhibited in the experimental study are explained by a unique combination of structural, electronic and mechanical properties of graphene. Various potential applications ranging from linear electron beam sources to microelectromechanical systems are discussed.

  12. Field electron emission from pencil-drawn cold cathodes

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jiangtao; Yang, Bingjun; Liu, Xiahui; Yang, Juan; Yan, Xingbin, E-mail: xbyan@licp.cas.cn [Laboratory of Clean Energy Chemistry and Materials, State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2016-05-09

    Field electron emitters with flat, curved, and linear profiles are fabricated on flexible copy papers by direct pencil-drawing method. This one-step method is free of many restricted conditions such as high-temperature, high vacuum, organic solvents, and multistep. The cold cathodes display good field emission performance and achieve high emission current density of 78 mA/cm{sup 2} at an electric field of 3.73 V/μm. The approach proposed here would bring a rapid, low-cost, and eco-friendly route to fabricate but not limited to flexible field emitter devices.

  13. Optical near-field lithography on hydrogen-passivated silicon surfaces

    DEFF Research Database (Denmark)

    Madsen, Steen; Müllenborn, Matthias; Birkelund, Karen

    1996-01-01

    by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.......We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced...

  14. Field emission properties of the graphenated carbon nanotube electrode

    Energy Technology Data Exchange (ETDEWEB)

    Zanin, H., E-mail: hudson.zanin@bristol.ac.uk [School of Chemistry, University of Bristol, Bristol BS8 1TS (United Kingdom); Faculdade de Engenharia Elétrica e Computação, Departamento de Semicondutores, Instrumentos e Fotônica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N. 400, CEP 13 083-852 Campinas, São Paulo (Brazil); Ceragioli, H.J.; Peterlevitz, A.C.; Baranauskas, Vitor [Faculdade de Engenharia Elétrica e Computação, Departamento de Semicondutores, Instrumentos e Fotônica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N. 400, CEP 13 083-852 Campinas, São Paulo (Brazil); Marciano, F.R.; Lobo, A.O. [Laboratory of Biomedical Nanotechnology/Institute of Research and Development at UNIVAP, Av. Shishima Hifumi, 2911, CEP 12244-000 Sao Jose dos Campos, SP (Brazil)

    2015-01-01

    Graphical abstract: - Highlights: • Facile method to prepare graphenated carbon nanotubes (g-CNTs). • The electric field emission behaviour of g-CNTs was studied. • g-CNTs show better emission current stability than non-graphenated CNTs. - Abstract: Reduced graphene oxide-coated carbon nanotubes (RGO-CNT) electrodes have been prepared by hot filament chemical vapour deposition system in one-step growth process. We studied RGO-CNT electrodes behaviour as cold cathode in field emission test. Our results show that RGO-CNT retain the low threshold voltage typical of CNTs, but with greatly improved emission current stability. The field emission enhancement value is significantly higher than that expected being caused by geometric effect (height divided by the radius of nanotube). This suggested that the field emission of this hybrid structure is not only from a single tip, but eventually it is from several tips with contribution of graphene nanosheets at CNT's walls. This phenomenon explains why the graphenated carbon nanotubes do not burn out as quickly as CNT does until emission ceases completely. These preliminaries results make nanocarbon materials good candidates for applications as electron sources for several devices.

  15. Study of shape evaluation for mask and silicon using large field of view

    Science.gov (United States)

    Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

    2010-09-01

    We have developed a highly integrated method of mask and silicon metrology. The aim of this integration is evaluating the performance of the silicon corresponding to Hotspot on a mask. It can use the mask shape of a large field, besides. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and mask manufacture, and this has a big impact on the semiconductor market that centers on the mask business. As an optimal solution to these issues, we provide a DFM solution that extracts 2-dimensional data for a more realistic and error-free simulation by reproducing accurately the contour of the actual mask, in addition to the simulation results from the mask data. On the other hand, there is roughness in the silicon form made from a mass-production line. Moreover, there is variation in the silicon form. For this reason, quantification of silicon form is important, in order to estimate the performance of a pattern. In order to quantify, the same form is equalized in two dimensions. And the method of evaluating based on the form is popular. In this study, we conducted experiments for averaging method of the pattern (Measurement Based Contouring) as two-dimensional mask and silicon evaluation technique. That is, observation of the identical position of a mask and a silicon was considered. The result proved its detection accuracy and reliability of variability on two-dimensional pattern (mask and silicon) and is adaptable to following fields of mask quality management. •Discrimination of nuisance defects for fine pattern. •Determination of two-dimensional variability of

  16. Recycling silicon wire-saw slurries: separation of silicon and silicon carbide in a ramp settling tank under an applied electrical field.

    Science.gov (United States)

    Tsai, Tzu-Hsuan; Shih, Yu-Pei; Wu, Yung-Fu

    2013-05-01

    The growing demand for silicon solar cells in the global market has greatly increased the amount of silicon sawing waste produced each year. Recycling kerf Si and SiC from sawing waste is an economical method to reduce this waste. This study reports the separation of Si and SiC using a ramp settling tank. As they settle in an electrical field, small Si particles with higher negative charges have a longer horizontal displacement than SiC particles in a solution of pH 7, resulting in the separation of Si and SiC. The agreement between experimental results and predicted results shows that the particles traveled a short distance to reach the collection port in the ramp tank. Consequently, the time required for tiny particles to hit the tank bottom decreased, and the interference caused by the dispersion between particles and the fluid motion during settling decreased. In the ramp tank, the highest purities of the collected SiC and Si powders were 95.2 and 7.01 wt%, respectively. Using a ramp tank, the recycling fraction of Si-rich powders (SiC tanks. Recycling Si and SiC abrasives from the silicon sawing waste is regarded as an economical solution to reduce the sawing waste. However, the separation of Si and SiC is difficult. This study reports the separation of Si and SiC using a ramp settling tank under an applied electrical field. As they settle in an electrical field, small Si particles with higher negative charges have a longer horizontal displacement than SiC particles in a solution of pH 7, resulting in the separation of Si and SiC. Compared with the rectangular tanks, the recycling fraction of Si-rich powders using a ramp tank is greater, and the proposed ramp settling tank is more suitable for industrial applications.

  17. Outstanding field emission properties of wet-processed titanium dioxide coated carbon nanotube based field emission devices

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Jinzhuo; Ou-Yang, Wei, E-mail: ouyangwei@phy.ecnu.edu.cn; Chen, Xiaohong; Guo, Pingsheng; Piao, Xianqing; Sun, Zhuo [Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, 3663 North Zhongshan Road, Shanghai 200062 (China); Xu, Peng; Wang, Miao [Department of Physics, Zhejiang University, 38 ZheDa Road, Hangzhou 310027 (China); Li, Jun [Department of Electronic Science and Technology, Tongji University, 4800 Caoan Road, Shanghai 201804 (China)

    2015-02-16

    Field emission devices using a wet-processed composite cathode of carbon nanotube films coated with titanium dioxide exhibit outstanding field emission characteristics, including ultralow turn on field of 0.383 V μm{sup −1} and threshold field of 0.657 V μm{sup −1} corresponding with a very high field enhancement factor of 20 000, exceptional current stability, and excellent emission uniformity. The improved field emission properties are attributed to the enhanced edge effect simultaneously with the reduced screening effect, and the lowered work function of the composite cathode. In addition, the highly stable electron emission is found due to the presence of titanium dioxide nanoparticles on the carbon nanotubes, which prohibits the cathode from the influence of ions and free radical created in the emission process as well as residual oxygen gas in the device. The high-performance solution-processed composite cathode demonstrates great potential application in vacuum electronic devices.

  18. Methane emission from wetland rice fields

    NARCIS (Netherlands)

    Denier van der Gon, H.A.C.

    1996-01-01


    Methane (CH 4 ) is an important greenhouse gas and plays a key role in tropospheric and stratospheric chemistry. Wetland rice fields are an important source of methane, accounting for approximately 20% of the global anthropogenic

  19. Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects.

    Science.gov (United States)

    Chen, Mengxiao; Pan, Caofeng; Zhang, Taiping; Li, Xiaoyi; Liang, Renrong; Wang, Zhong Lin

    2016-06-28

    Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.

  20. Impact ionization dynamics in silicon by MV/cm THz fields

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun; Hirori, Hideki; Tanaka, Koichiro

    2017-01-01

    We investigate the dynamics of the impact ionization (IMI) process in silicon in extremely high fields in the MV/cm range and at low initial carrier concentrations; conditions that are not accessible with conventional transport measurements. We use ultrafast measurements with high-intensity terah......We investigate the dynamics of the impact ionization (IMI) process in silicon in extremely high fields in the MV/cm range and at low initial carrier concentrations; conditions that are not accessible with conventional transport measurements. We use ultrafast measurements with high......-intensity terahertz pulses to show that IMI is significantly more efficient at lower than at higher initial carrier densities. Specifically, in the case of silicon with an intrinsic carrier concentration (∼1010 cm−3), the carrier multiplication process can generate more than 108 electrons from just a single free...

  1. An innovative large scale integration of silicon nanowire-based field effect transistors

    Science.gov (United States)

    Legallais, M.; Nguyen, T. T. T.; Mouis, M.; Salem, B.; Robin, E.; Chenevier, P.; Ternon, C.

    2018-05-01

    Since the early 2000s, silicon nanowire field effect transistors are emerging as ultrasensitive biosensors while offering label-free, portable and rapid detection. Nevertheless, their large scale production remains an ongoing challenge due to time consuming, complex and costly technology. In order to bypass these issues, we report here on the first integration of silicon nanowire networks, called nanonet, into long channel field effect transistors using standard microelectronic process. A special attention is paid to the silicidation of the contacts which involved a large number of SiNWs. The electrical characteristics of these FETs constituted by randomly oriented silicon nanowires are also studied. Compatible integration on the back-end of CMOS readout and promising electrical performances open new opportunities for sensing applications.

  2. Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

    CERN Document Server

    Swartz, M.; Allkofer, Y.; Bortoletto, D.; Cremaldi, L.; Cucciarelli, S.; Dorokhov, A.; Hoermann, C.; Kim, D.; Konecki, M.; Kotlinski, D.; Prokofiev, Kirill; Regenfus, Christian; Rohe, T.; Sanders, D.A.; Son, S.; Speer, T.

    2006-01-01

    We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.

  3. Numerical investigation of magnetic field effect on pressure in cylindrical and hemispherical silicon CZ crystal growth

    International Nuclear Information System (INIS)

    Mokhtari, F.; Bouabdallah, A.; Merah, A.; Oualli, H.

    2012-01-01

    The effect of axial magnetic field of different intensities on pressure in silicon Czochralski crystal growth is investigated in cylindrical and hemispherical geometries with rotating crystal and crucible and thermocapillary convection. As one important thermodynamic variable, the pressure is found to be more sensitive than temperature to magnetic field with strong dependence upon the vorticity field. The pressure at the triple point is proposed as a convenient parameter to control the homogeneity of the grown crystal. With a gradual increase of the magnetic field intensity the convection effect can be reduced without thermal fluctuations in the silicon melt. An evaluation of the magnetic interaction parameter critical value corresponding to flow, pressure and temperature homogenization leads to the important result that a relatively low axial magnetic field is required for the spherical system comparatively to the cylindrical one. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Numerical investigation of magnetic field effect on pressure in cylindrical and hemispherical silicon CZ crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, F. [Universite Mouloud Mammeri de Tizi Ouzou (Algeria); LTSE Laboratory, University of Science and Technology. BP 32 Elalia, Babezzouar, Algiers (Algeria); Bouabdallah, A. [LTSE Laboratory, University of Science and Technology. BP 32 Elalia, Babezzouar, Algiers (Algeria); Merah, A. [LTSE Laboratory, University of Science and Technology. BP 32 Elalia, Babezzouar, Algiers (Algeria); M' hamed Bougara University, Boumerdes (Algeria); Oualli, H. [EMP, Bordj ElBahri, Algiers (Algeria)

    2012-12-15

    The effect of axial magnetic field of different intensities on pressure in silicon Czochralski crystal growth is investigated in cylindrical and hemispherical geometries with rotating crystal and crucible and thermocapillary convection. As one important thermodynamic variable, the pressure is found to be more sensitive than temperature to magnetic field with strong dependence upon the vorticity field. The pressure at the triple point is proposed as a convenient parameter to control the homogeneity of the grown crystal. With a gradual increase of the magnetic field intensity the convection effect can be reduced without thermal fluctuations in the silicon melt. An evaluation of the magnetic interaction parameter critical value corresponding to flow, pressure and temperature homogenization leads to the important result that a relatively low axial magnetic field is required for the spherical system comparatively to the cylindrical one. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Emission Spectrum Property of Modulated Atom-Field Coupling System

    International Nuclear Information System (INIS)

    Gao Yun-Feng; Feng Jian; Li Yue-Ke

    2013-01-01

    The emission spectrum of a two-level atom interacting with a single mode radiation field in the case of periodic oscillation coupling coefficient is investigated. A general expression for the emission spectrum is derived. The numerical results for the initial field in pure number stare are calculated. It is found that the effect of the coupling coefficient modulation on the spectral structure is very obvious in the case of a low modulation frequency and larger amplitude when the initial field is vacuum, which is potentially useful for exploring a modulated light source. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  6. Radiative thermal emission from silicon nanoparticles: a reversed story from quantum to classical theory

    International Nuclear Information System (INIS)

    Roura, P.; Costa, J.

    2002-01-01

    Among the rush of papers published after the discovery of visible luminescence in porous silicon, a number of them claimed that an extraordinary behaviour had been found. However, after five years of struggling with increasingly sophisticated but not completely successful models, it was finally demonstrated that it was simply thermal radiation. Here, we calculate thermal radiation emitted by silicon nanoparticles when irradiated in vacuum with a laser beam. If one interprets this radiation as being photoluminescence, its properties appear extraordinary: non-exponential excitation and decay transients and a supralinear dependence on laser power. Within the (quantum) theory of photoluminescence, this behaviour can be interpreted as arising from a non-usual excitation mechanism known as multiphoton excitation. Although this erroneous interpretation has, to some extent, a predictive power, it is unable to give a sound explanation for the quenching of radiation when particles are not irradiated in vacuum but inside a gas. The real story of this error is presented both to achieve a deeper understanding of the radiative thermal emission of nanoparticles and as a matter of reflection on scientific activity. (author)

  7. Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals

    Directory of Open Access Journals (Sweden)

    J. Bornacelli

    2014-01-01

    Full Text Available Efficient silicon-based light emitters continue to be a challenge. A great effort has been made in photonics to modify silicon in order to enhance its light emission properties. In this aspect silicon nanocrystals (Si-NCs have become the main building block of silicon photonic (modulators, waveguide, source, and detectors. In this work, we present an approach based on implantation of Ag (or Au ions and a proper thermal annealing in order to improve the photoluminescence (PL emission of Si-NCs embedded in SiO2. The Si-NCs are obtained by ion implantation at MeV energy and nucleated at high depth into the silica matrix (1-2 μm under surface. Once Si-NCs are formed inside the SiO2 we implant metal ions at energies that do not damage the Si-NCs. We have observed by, PL and time-resolved PL, that ion metal implantation and a subsequent thermal annealing in a hydrogen-containing atmosphere could significantly increase the emission properties of Si-NCs. Elastic Recoil Detection measurements show that the samples with an enhanced luminescence emission present a higher hydrogen concentration. This suggests that ion metal implantation enhances the hydrogen diffusion into silica matrix allowing a better passivation of surface defects on Si NCs.

  8. Angular dependence of secondary ion emission from silicon bombarded with inert gas ions

    International Nuclear Information System (INIS)

    Wittmaack, K.

    1984-01-01

    The emission of positive and negative, atomic and molecular secondary ions sputtered from silicon has been studied under ultrahigh vacuum conditions. The sample was bombarded with 2-12 keV Ar + and Xe + ions at angles of incidence between 0 0 and 60 0 to the surface normal. The angular dependence of the secondary ion intensity as well as the energy spectra of Si + and Si - were found to differ significantly. The effect is attributed mostly do differences in the rate of neutralization. The stability of molecular ions appears to be independent of the charge state. Supporting evidence is provided for the idea that multiply charged secondary ions are due to Auger de-excitation of sputtered atoms in vacuum. (orig.)

  9. All-(111) surface silicon nanowire field effect transistor devices: Effects of surface preparations

    NARCIS (Netherlands)

    Masood, M.N.; Carlen, Edwin; van den Berg, Albert

    2014-01-01

    Etching/hydrogen termination of All-(111) surface silicon nanowire field effect (SiNW-FET) devices developed by conventional photolithography and plane dependent wet etchings is studied with X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and

  10. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea

    This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project...

  11. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea; Svendsen, Winnie Edith; Dimaki, Maria

    2016-01-01

    This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project...

  12. IC Compatible Wafer Level Fabrication of Silicon Nanowire Field Effect Transistors for Biosensing Applications

    NARCIS (Netherlands)

    Moh, T.S.Y.

    2013-01-01

    In biosensing, nano-devices such as Silicon Nanowire Field Effect Transistors (SiNW FETs) are promising components/sensors for ultra-high sensitive detection, especially when samples are low in concentration or a limited volume is available. Current processing of SiNW FETs often relies on expensive

  13. Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

    KAUST Repository

    Lee, Changhwa

    2010-04-29

    An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

  14. Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

    KAUST Repository

    Lee, Changhwa; Lee, Seokwoo; Lee, Seung S

    2010-01-01

    An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

  15. Influence of local field on spontaneous light emission by nanoparticles

    DEFF Research Database (Denmark)

    Keller, Ole; Lozovski, V.; Iezhokin, I.

    2009-01-01

    moment of transition that takes local-field effects into account. The effective dipole moment depends on the particle shape and size. Therefore, dipole radiation depends on those parameters too. The direction patterns of light emission by cubic particles have been calculated. The particles have been......A self-consistent approach based on the local-field concept has been proposed to calculate the direction patterns of light emission by nanoparticles with various shapes. The main idea of the method consists in constructing self-consistent equations for the electromagnetic field at any point...... of the system. The solution of the equations brings about relationships between the local field at an arbitrary point in the system and the external long-wave field via the local-field factor. The latter connects the initial moment of optical dipole transition per system volume unit and the effective dipole...

  16. Utility of silicone filtering for diffusive model CO2 sensors in field experiments

    Directory of Open Access Journals (Sweden)

    Shinjiro Ohkubo

    2013-05-01

    Full Text Available Installing a diffusive model CO2 sensor in the soil is a direct and useful method to observe the time variation of gas CO2 concentration in soil. Furthermore, it requires no bulky measurement system. A hydrophobic silicone filter prevents water infiltration. Therefore, a sensor whose detection element is covered with a silicone filter can be durable in the field even when experiencing inundation (e.g. farmland with snow melting, wetland with varying water level. The utility of a diffusive model of CO2 sensor covered with silicone filter was examined in laboratory and field experiments. Applying the silicone filter delays the response to change in ambient CO2 concentration, which results from lower gas permeability than those of other conventionally used filters made of materials, such as polytetrafluoroethylene. Theoretically, apart from the precision of the sensor itself, diurnal variation of soil gas CO2 concentration is calculable from obtained series of data with a silicone-covered sensor with negligible error. The error is estimated at approximately 1% of the diurnal amplitude in most cases of a 10-min logging interval. Drastic changes that occur, such as those of a rainfall event, cause a larger gap separating calculated and real values. However, the proportion of this gap to the extent of the drastic increase was extremely small (0.43% for a 10-min logging interval. For accurate estimation, a smoothly varied data series must be prepared as input data. Using a moving average or applying a fitting curve can be useful when using a sensor or data logger with low resolution. Estimating the gas permeability coefficient is crucial for calculation. The gas permeability coefficient can be estimated through laboratory experiments. This study revealed the possibility of evaluating the time variation of soil gas CO2 concentration by installing a diffusive model of silicone-covered sensor in an inundated field.

  17. Improved field emission properties of carbon nanotubes grown on stainless steel substrate and its application in ionization gauge

    Energy Technology Data Exchange (ETDEWEB)

    Li, Detian; Cheng, Yongjun [Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000 (China); Wang, Yongjun, E-mail: wyjlxlz@163.com [Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000 (China); Zhang, Huzhong [Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000 (China); Dong, Changkun [Institute of Micro-Nano Structures and Optoelectronics, Wenzhou University, Wenzhou 325035 (China); Li, Da [Division of Advanced Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2016-03-01

    Graphical abstract: - Highlights: • The high quality CNT arrays were successfully grown on conductive stainless steel substrates. • The CNT array grown on stainless steel substrate exhibited superior field emission properties. • A high vacuum level about 10–8 Pa was measured by resultant CNT-based ionization gauge. • The ionization gauge with CNT cathode demonstrated a high stability. - Abstract: Vertically aligned carbon nanotube (CNT) arrays were fabricated by chemical vapor deposition (CVD) technique on different substrates. Microstructures and field emission characteristics of the as-grown CNT arrays were investigated systematically, and its application in ionization gauge was also evaluated preliminarily. The results indicate that the as-grown CNT arrays are vertically well-aligned relating to the substrate surfaces, but the CNTs grown on stainless steel substrate are longer and more crystalline than the ones grown on silicon wafer substrate. The field emission behaviors of the as-grown CNT arrays are strongly dependent upon substrate properties. Namely, the CNT array grown on stainless steel substrate has better field emission properties, including lower turn on and threshold fields, better emission stability and repeatability, compared with the one grown on silicon wafer substrate. The superior field emission properties of the CNT array grown on stainless steel substrate are mainly attributed to low contact resistance, high thermal conductivity, good adhesion strength, etc. In addition, the metrological behaviors of ionization gauge with the CNT array grown on stainless steel substrate as an electron source were investigated, and this novel cathode ionization gauge extends the lower limit of linear pressure measurement to 10{sup −8} Pa, which is one order of magnitude lower than the result reported for the same of gauge with CNT cathode.

  18. Field Emission and Radial Distribution Function Studies of Fractal-like Amorphous Carbon Nanotips

    Directory of Open Access Journals (Sweden)

    Lebrón-Colón M

    2009-01-01

    Full Text Available Abstract The short-range order of individual fractal-like amorphous carbon nanotips was investigated by means of energy-filtered electron diffraction in a transmission electron microscope (TEM. The nanostructures were grown in porous silicon substrates in situ within the TEM by the electron beam-induced deposition method. The structure factorS(k and the reduced radial distribution functionG(r were calculated. From these calculations a bond angle of 124° was obtained which suggests a distorted graphitic structure. Field emission was obtained from individual nanostructures using two micromanipulators with sub-nanometer positioning resolution. A theoretical three-stage model that accounts for the geometry of the nanostructures provides a value for the field enhancement factor close to the one obtained experimentally from the Fowler-Nordheim law.

  19. Process system and method for fabricating submicron field emission cathodes

    Science.gov (United States)

    Jankowski, Alan F.; Hayes, Jeffrey P.

    1998-01-01

    A process method and system for making field emission cathodes exists. The deposition source divergence is controlled to produce field emission cathodes with height-to-base aspect ratios that are uniform over large substrate surface areas while using very short source-to-substrate distances. The rate of hole closure is controlled from the cone source. The substrate surface is coated in well defined increments. The deposition source is apertured to coat pixel areas on the substrate. The entire substrate is coated using a manipulator to incrementally move the whole substrate surface past the deposition source. Either collimated sputtering or evaporative deposition sources can be used. The position of the aperture and its size and shape are used to control the field emission cathode size and shape.

  20. Field emission study of MWCNT/conducting polymer nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Alvi, M.A., E-mail: maalvee@yahoo.co.in [Department of Physics, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Al-Ghamdi, A.A. [Department of Physics, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Husain, M. [Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India)

    2014-12-01

    MWCNTs/Polypyrrole nanocomposites were synthesized by solution mixing method. These synthesized nanocomposites were studied carefully by Raman Spectroscopy and Scanning Electron Microscopy measurements. The field emission study of MWCNTs/Polypyrrole nanocomposites were performed in diode arrangement under vacuum of the order of 10{sup −5} Torr. The emission current under exploration depends on applied voltage. The prepared nanocomposites depict low turn-on field at 1.4 V/μm that reaches to a maximum emission current density 0.020 mA/cm{sup 2} at 2.4 V/µm, which is calculated from the graph of current density (J) against the applied electric field (E) and from Fowler–Nordheim (F–N) plot.

  1. Enhanced field emission from carbon nanotubes by hydrogen plasma treatment

    International Nuclear Information System (INIS)

    Zhi, C.Y.; Bai, X.D.; Wang, E.G.

    2002-01-01

    The field emission capability of the carbon nanotubes (CNTs) has been improved by hydrogen plasma treatment, and the enhanced emission mechanism has been studied systematically using Fourier-transform infrared spectroscopy, Raman, and transmission electron microscopy. The hydrogen concentration in the samples increases with increasing plasma treatment duration. A C δ- -H δ+ dipole layer may form on CNTs' surface and a high density of defects results from the plasma treatment, which is likely to make the external surface of CNTs more active to emit electrons after treatment. In addition, the sharp edge of CNTs' top, after removal of the catalyst particles, may increase the local electronic field more effectively. The present study suggests that hydrogen plasma treatment is a useful method for improving the field electron emission property of CNTs

  2. Dielectric polarization and electric field distortion due to heavy ions impinging on silicon detectors

    International Nuclear Information System (INIS)

    Parlog, M.; Wieleczko, J.P.; Parlog, M.; Hamrita, H.; Borderie, B.; Lavergne, L.; Rivet, M.F.

    2003-01-01

    The polarization of the electron-hole pairs induced by 80 MeV 12 C in a silicon detector was considered and connected to the relative dielectric permittivity, locally increased. The exact coordinate dependence of the modified electric field - inside and outside the ion range - was found as the solution of the one dimension Poisson's equation for the electric potential in this inhomogeneous medium. The improvement of the signal simulation is encouraging, as compared to an undisturbed electric field case. (authors)

  3. High-Performance Field Emission from a Carbonized Cork.

    Science.gov (United States)

    Lee, Jeong Seok; Lee, Hak Jun; Yoo, Jae Man; Kim, Taewoo; Kim, Yong Hyup

    2017-12-20

    To broaden the range of application of electron beams, low-power field emitters are needed that are miniature and light. Here, we introduce carbonized cork as a material for field emitters. The light natural cork becomes a graphitic honeycomb upon carbonization, with the honeycomb cell walls 100-200 nm thick and the aspect ratio larger than 100, providing an ideal structure for the field electron emission. Compared to nanocarbon field emitters, the cork emitter produces a high current density and long-term stability with a low turn-on field. The nature of the cork material makes it quite simple to fabricate the emitter. Furthermore, any desired shape of the emitter tailored for the final application can easily be prepared for point, line, or planar emission.

  4. Field-emission from quantum-dot-in-perovskite solids.

    Science.gov (United States)

    García de Arquer, F Pelayo; Gong, Xiwen; Sabatini, Randy P; Liu, Min; Kim, Gi-Hwan; Sutherland, Brandon R; Voznyy, Oleksandr; Xu, Jixian; Pang, Yuangjie; Hoogland, Sjoerd; Sinton, David; Sargent, Edward

    2017-03-24

    Quantum dot and well architectures are attractive for infrared optoelectronics, and have led to the realization of compelling light sensors. However, they require well-defined passivated interfaces and rapid charge transport, and this has restricted their efficient implementation to costly vacuum-epitaxially grown semiconductors. Here we report solution-processed, sensitive infrared field-emission photodetectors. Using quantum-dots-in-perovskite, we demonstrate the extraction of photocarriers via field emission, followed by the recirculation of photogenerated carriers. We use in operando ultrafast transient spectroscopy to sense bias-dependent photoemission and recapture in field-emission devices. The resultant photodiodes exploit the superior electronic transport properties of organometal halide perovskites, the quantum-size-tuned absorption of the colloidal quantum dots and their matched interface. These field-emission quantum-dot-in-perovskite photodiodes extend the perovskite response into the short-wavelength infrared and achieve measured specific detectivities that exceed 10 12 Jones. The results pave the way towards novel functional photonic devices with applications in photovoltaics and light emission.

  5. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi; Wang, Qingxiao; Yue, Weisheng; Guo, Zaibing; LI, LIANG; Zhao, Chao; Wang, Xianbin; Abutaha, Anas I.; Alshareef, Husam N.; Zhang, Yafei; Zhang, Xixiang

    2014-01-01

    Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. This journal is © the Partner Organisations 2014.

  6. Electric field strength and plasma delay in silicon surface barrier detector

    International Nuclear Information System (INIS)

    Kanno, I.; Inbe, T.; Kanazawa, S.; Kimura, I.

    1994-01-01

    The resistivity change of a silicon irradiated by high energy neutrons became an interest of study associated with the large scale accelerator projects . The increase of the resistivity of the silicon of a silicon surface barrier detector (SSBD) was studied as a function of neutron fluence. The plasma delay, which was an interesting but not favorite timing property of the SSBD, was reported being dependent on the resistivity of silicon . The neutron irradiation brings the change of timing property as well as the resistivity change on the SSBD. The resistivity dependence of the plasma delay should be studied for the purpose of high energy accelerator experiments. Some empirical formulae of the plasma delay were reported, however, there were no discussions on the physical meanings of the resistivity dependence of the plasma delay. The plasma delay in a SSBD is discussed in the light of electric field strength in the depletion layer of the SSBD. The explanation of the plasma delay is presented taking into account of the competing two electric forces. The resistivity of the silicon affects the plasma delay through the electric forces. 3 figs, 3 refs. (author)

  7. Field emission properties of an array of pyramidal structures

    Energy Technology Data Exchange (ETDEWEB)

    De Assis, Thiago A [Departamento de QuImica, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Borondo, F [Departamento de QuImica, Instituto Mixto de Ciencias Matematicas CSIC-UAM-UC3M-UCM, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); De Castilho, C M C; Brito Mota, F [Grupo de Fisica de SuperfIcies e Materiais, Instituto de Fisica, Universidade Federal da Bahia, Campus Universitario da Federacao, 40210-340, Salvador, BA (Brazil); Benito, R M, E-mail: t.albuquerque@uam.e, E-mail: f.borondo@uam.e, E-mail: caio@ufba.b, E-mail: fbmota@ufba.b, E-mail: rosamaria.benito@upm.e [Grupo de Sistemas Complejos, Departamento de Fisica y Mecanica, Escuela Tecnica Superior de Ingenieros Agronomos, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain)

    2009-10-07

    The properties and efficiency of the emission current density produced by a metallic array of pyramidal structures are investigated. The theoretical results obtained by numerical integration of the corresponding Laplace equation using a finite differences scheme offer useful information for the optimization of field emission devices based on cathodes with this geometry. Our study shows that the inter-pyramidal distance strongly affects the current density, and even more important for this issue is the protrusion characteristics of these structures. Another relevant, although less important, parameter determining this density is the anode-cathode distance. The effect of the array characteristics on the maximum local electric field intensity is also discussed.

  8. Buoyant convection during Czochralski silicon growth with a strong, non-uniform, axisymmetric magnetic field

    Science.gov (United States)

    Khine, Y. Y.; Walker, J. S.

    1995-02-01

    This paper treats the buoyant convection during the Czochralski growth of silicon crystals with a steady, strong, non-uniform, axisymmetric magnetic field. We consider a family of magnetic fields which includes a uniform axial magnetic field and a "cusp" field which is produced by identical solenoids placed symmetrically above and below the plane of the crystal-melt interface and free surface. We investigate the evolution of the buoyant convection as the magnetic field is changed continuously from a uniform axial field to a cusp field, with a constant value of the root-mean-squared magnetic flux density in the melt. We also investigate changes as the magnetic flux density is increased. While the cusp field appears very promising, perfect alignment between the local magnetic field vector and the crystal-melt interface or free surface is not possible, so the effects of a slight misalignment are also investigated.

  9. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    Science.gov (United States)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  10. CYANOBACTERIA FOR MITIGATING METHANE EMISSION FROM SUBMERGED PADDY FIELDS

    Energy Technology Data Exchange (ETDEWEB)

    Upasana Mishra; Shalini Anand [Department of Environmental Studies, Inderprastha Engineering College, Sahibabad, Ghaziabad (India)

    2008-09-30

    Atmospheric methane, a potent greenhouse gas with high absorption potential for infrared radiation, is responsible for one forth of the total anticipated warming. It is forming a major part of green house gases, next after carbon dioxide. Its concentration has been increasing alarmingly on an average at the rate of one percent per year. Atmospheric methane, originating mainly from biogenic sources such as paddy fields, natural wetlands and landfills, accounts for 15-20% of the world's total anthropogenic methane emission. With intensification of rice cultivation in coming future, methane emissions from paddy fields are anticipated to increase. India's share in world's rice production is next after to China and likewise total methane emission from paddy fields also. Methane oxidation through planktophytes, particularly microalgae which are autotrophic and abundant in rice rhizospheres, hold promise in controlling methane emission from submerged paddy fields. The present study is focused on the role of nitrogen fixing, heterocystous cyanobacteria and Azolla (a water fern harboring a cyanobacterium Anabaena azollae) as biological sink for headspace concentration of methane in flooded soils. In this laboratory study, soil samples containing five potent nitrogen fixer cyanobacterial strains from paddy fields, were examined for their methane reducing potential. Soil sample without cyanobacterial strain was tested and taken as control. Anabaena sp. was found most effective in inhibiting methane concentration by 5-6 folds over the control. Moist soil cores treated with chemical nitrogen, urea, in combination with cyanobacteria mixture, Azolla microphylla or cyanobacteria mixture plus Azolla microphylla exhibited significance reduction in the headspace concentration of methane than the soil cores treated with urea alone. Contrary to other reports, this study also demonstrates that methane oxidation in soil core samples from paddy fields was stimulated by

  11. Graphene-on-Silicon Near-Field Thermophotovoltaic Cell

    NARCIS (Netherlands)

    Svetovoy, V. B.; Palasantzas, G.

    2014-01-01

    A graphene layer on top of a dielectric can dramatically influence the ability of the material for radiative heat transfer. This property of graphene is used to improve the performance and reduce costs of near-field thermophotovoltaic cells. Instead of low-band-gap semiconductors it is proposed to

  12. Temperature fields in a growing solar silicon crystal

    Directory of Open Access Journals (Sweden)

    Kondrik A. I.

    2012-06-01

    Full Text Available The optimal thermal terms for growing by Czochralski method Si single-crystals, suitable for making photoelectric energy converters, has been defined by the computer simulation method. Dependences of temperature fields character and crystallization front form on the diameter of the crystal, stage and speed of growing, and also on correlation between diameter and height of the crystal has been studied.

  13. Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

    Science.gov (United States)

    Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

    2018-02-01

    We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

  14. Life Cycle Greenhouse Gas Emissions of Crystalline Silicon Photovoltaic Electricity Generation: Systematic Review and Harmonization

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, D. D.; O' Donoughue, P.; Fthenakis, V.; Heath, G. A.; Kim, H. C.; Sawyer, P.; Choi, J. K.; Turney, D. E.

    2012-04-01

    Published scientific literature contains many studies estimating life cycle greenhouse gas (GHG) emissions of residential and utility-scale solar photovoltaics (PVs). Despite the volume of published work, variability in results hinders generalized conclusions. Most variance between studies can be attributed to differences in methods and assumptions. To clarify the published results for use in decision making and other analyses, we conduct a meta-analysis of existing studies, harmonizing key performance characteristics to produce more comparable and consistently derived results. Screening 397 life cycle assessments (LCAs) relevant to PVs yielded 13 studies on crystalline silicon (c-Si) that met minimum standards of quality, transparency, and relevance. Prior to harmonization, the median of 42 estimates of life cycle GHG emissions from those 13 LCAs was 57 grams carbon dioxide equivalent per kilowatt-hour (g CO{sub 2}-eq/kWh), with an interquartile range (IQR) of 44 to 73. After harmonizing key performance characteristics, irradiation of 1,700 kilowatt-hours per square meter per year (kWh/m{sup 2}/yr); system lifetime of 30 years; module efficiency of 13.2% or 14.0%, depending on module type; and a performance ratio of 0.75 or 0.80, depending on installation, the median estimate decreased to 45 and the IQR tightened to 39 to 49. The median estimate and variability were reduced compared to published estimates mainly because of higher average assumptions for irradiation and system lifetime. For the sample of studies evaluated, harmonization effectively reduced variability, providing a clearer synopsis of the life cycle GHG emissions from c-Si PVs. The literature used in this harmonization neither covers all possible c-Si installations nor represents the distribution of deployed or manufactured c-Si PVs.

  15. Field electron emission from dense array of microneedles of tungsten

    International Nuclear Information System (INIS)

    Okuyama, F.; Aoyagi, M.; Kitai, T.; Ishikawa, K.

    1978-01-01

    Characteristics of field electron emission from the dense array of microneedles of tungsten prepared on a 10-μm tungsten filament were measured at an environmental pressure of approx.1 x 10 -8 Torr (1.33 x 10 -6 Pa). Electron emission was not uniform over the filament surface, but the variation of emission current with applied voltage explicitly obeyed the Fowler-Nordheim relationship. At an emission current of approx.10 -4 A, a vacuum arc was induced that led to a permanent change in current-voltage characteristic. Current fluctuation was dependent on emitter temperature and applied voltage, and the lowest fluctuation of about 4% was routinely obtained at approx.550 K and at applied voltages several percent lower than the arc-inducing voltage. Macroscopic current density amounted to approx.20-80 mA/cm 2 at the best stability

  16. Centrifugal pumping during Czochralski silicon growth with a strong, non-uniform, axisymmetric magnetic field

    Science.gov (United States)

    Khine, Y. Y.; Walker, J. S.

    1996-08-01

    Centrifugal pumping flows are produced in the melt by the rotations of crystal and crucible during the Czochralski growth of silicon crystals. This paper treats the centrifugal pumping effects with a steady, strong, non-uniform axisymmetric magnetic field. We consider a family of magnetic fields ranging from a uniform axial field to a "cusp" field, which has a purely radial field at the crystal-melt interface and free surface. We present the numerical solutions for the centrifugal pumping flows as the magnetic field is changed continuously from a uniform axial field to a cusp one, and for arbitrary Hartmann number. Since the perfect alignment between the local magnetic field vector and the crystal-melt interface or free surface is not likely, we also investigate the effects of a slight misalignment.

  17. Opto-electrical magnetic-field studies on solar silicon; Optoelektrische Magnetfelduntersuchungen an Solarsilizium

    Energy Technology Data Exchange (ETDEWEB)

    Buchwald, Rajko

    2010-05-21

    In the framework of this thesis opto-electrical studies on polycrystalline (pc) solar cells and solar materials have been performed. For this by magnetic-field topographical measurements the current distributions of the silicon samples were determined. For this the new, highly position-resolving magnetic-field measuring method CAIC has been developed and applied. The arrangement, the measurement principle, and the particularities of the method are explained. The results of the CAIC measurements have been compared with results of optical and electrical characterization methods, like the IR transmission-light microscopy, the LBIC, and the LIT method and evaluated. Special grain boundaries in the pc silicon samples with and without pn junction show photocurrent fluxes to the grain boundaries. On the base of the performed studies and the assumption of the existence of a grain-boundary decoration the current-flow model of an electrically active grain boundary is shown for a sample with pn junction as well as for a sample without pn junction. Furthermore macroscopical SiC and Si{sub 3}N{sub 4} precipitations in pc silicon were studied. By means of CAIC measurements hereby the position and the orientation of the conducting and near-surface precipitations could be determined. A current-flow model for macroscopic precipitations in silicon samples without pn junction is presented. Furthermore cell microcracks, failures in the contact structure and layout differences of the contact structure are uniquely detected by CAIC measurements on solar cells.

  18. Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Magnetic Fields

    Science.gov (United States)

    Jauss, T.; Croell, A.; SorgenFrei, T.; Azizi, M.; Reimann, C.; Friedrich, J.; Volz, M. P.

    2014-01-01

    Solar cells made from directionally solidified silicon cover 57% of the photovoltaic industry's market [1]. One major issue during directional solidification of silicon is the precipitation of foreign phase particles. These particles, mainly SiC and Si3N4, are precipitated from the dissolved crucible coating, which is made of silicon nitride, and the dissolution of carbon monoxide from the furnace atmosphere. Due to their hardness and size of several hundred micrometers, those particles can lead to severe problems during the wire sawing process for wafering the ingots. Additionally, SiC particles can act as a shunt, short circuiting the solar cell. Even if the particles are too small to disturb the wafering process, they can lead to a grit structure of silicon micro grains and serve as sources for dislocations. All of this lowers the yield of solar cells and reduces the performance of cells and modules. We studied the behaviour of SiC particle depots during float-zone growth under an oxide skin, and strong static magnetic fields. For high field strengths of 3T and above and an oxide layer on the sample surface, convection is sufficiently suppressed to create a diffusive like regime, with strongly dampened convection [2, 3]. To investigate the difference between atomically rough phase boundaries and facetted growth, samples with [100] and [111] orientation were processed.

  19. Field emission from the surface of highly ordered pyrolytic graphite

    Czech Academy of Sciences Publication Activity Database

    Knápek, Alexandr; Sobola, D.; Tománek, P.; Pokorná, Zuzana; Urbánek, Michal

    2017-01-01

    Roč. 395, FEB 15 (2017), s. 157-161 ISSN 0169-4332 R&D Projects: GA TA ČR(CZ) TE01020118 Institutional support: RVO:68081731 Keywords : field emission * HOPG * scanning electron microscopy * scanning near-field optical microscopy Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Nano-processes (applications on nano-scale) Impact factor: 3.387, year: 2016

  20. Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Armour, N.; Dost, S. [Crystal Growth Laboratory, University of Victoria, Victoria, BC, V8W 3P6 (Canada)

    2010-04-15

    The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72-hour growth periods produced some single crystal sections. Single and polycrystalline sections of the processed samples were examined for silicon composition. Results show that the application of a rotating magnetic field enhances silicon transport in the melt. It also has a slight positive effect on flattening the initial growth interface. For comparison, growth experiments were also conducted under combined (rotating and static) magnetic fields. The processed samples revealed that the addition of static field altered the thermal characteristics of the system significantly and led to a complete melt back of the germanium seed. Silicon transport in the melt was also enhanced under combined fields compared with experiments with no magnetic field. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Probe-Hole Field Emission Microscope System Controlled by Computer

    Science.gov (United States)

    Gong, Yunming; Zeng, Haishan

    1991-09-01

    A probe-hole field emission microscope system, controlled by an Apple II computer, has been developed and operated successfully for measuring the work function of a single crystal plane. The work functions on the clean W(100) and W(111) planes are measured to be 4.67 eV and 4.45 eV, respectively.

  2. Development of Field-Emission Electron Gun from Carbon Nanotubes

    CERN Document Server

    Hozumi, Y

    2004-01-01

    Aiming to use a narrow energy-spread electron beam easily and low costly on injector electron guns, we have been tested field emission cathodes of carbon nanotubes (CNTs). Experiments for these three years brought us important suggestions and a few rules of thumb. Now at last, anode current of 3.0 [A/cm2

  3. Focus-variation image reconstruction in field-emission TEM

    NARCIS (Netherlands)

    Coene, W.M.J.; Janssen, A.J.E.M.; Op de Beeck, M.; Van Dyck, D.; Van Zwet, E.J.; Zandbergen, H.W.; Bailey, G.W.; Rieder, C.L.

    1993-01-01

    The use of a field emission gun (FEG) in high resolution TEM (HRTEM) improves the information limit much below the point resolution. In the area between point and information resolution of the FEG-TEM, image interpretation is complicated by the lens aberrations and focus effects. Different

  4. High-field Overhauser dynamic nuclear polarization in silicon below the metal-insulator transition.

    Science.gov (United States)

    Dementyev, Anatoly E; Cory, David G; Ramanathan, Chandrasekhar

    2011-04-21

    Single crystal silicon is an excellent system to explore dynamic nuclear polarization (DNP), as it exhibits a continuum of properties from metallic to insulating as a function of doping concentration and temperature. At low doping concentrations DNP has been observed to occur via the solid effect, while at very high-doping concentrations an Overhauser mechanism is responsible. Here we report the hyperpolarization of (29)Si in n-doped silicon crystals, with doping concentrations in the range of (1-3) × 10(17) cm(-3). In this regime exchange interactions between donors become extremely important. The sign of the enhancement in our experiments and its frequency dependence suggest that the (29)Si spins are directly polarized by donor electrons via an Overhauser mechanism within exchange-coupled donor clusters. The exchange interaction between donors only needs to be larger than the silicon hyperfine interaction (typically much smaller than the donor hyperfine coupling) to enable this Overhauser mechanism. Nuclear polarization enhancement is observed for a range of donor clusters in which the exchange energy is comparable to the donor hyperfine interaction. The DNP dynamics are characterized by a single exponential time constant that depends on the microwave power, indicating that the Overhauser mechanism is a rate-limiting step. Since only about 2% of the silicon nuclei are located within 1 Bohr radius of the donor electron, nuclear spin diffusion is important in transferring the polarization to all the spins. However, the spin-diffusion time is much shorter than the Overhauser time due to the relatively weak silicon hyperfine coupling strength. In a 2.35 T magnetic field at 1.1 K, we observed a DNP enhancement of 244 ± 84 resulting in a silicon polarization of 10.4 ± 3.4% following 2 h of microwave irradiation.

  5. Near-field optical nanopatterning of crystalline silicon

    International Nuclear Information System (INIS)

    Wysocki, G.; Heitz, J.; Baeuerle, D.

    2004-01-01

    Nanoscale photochemical and photophysical etching of Si in Cl 2 atmosphere is demonstrated by means of an optical near-field setup. With 351 nm Ar + -laser radiation and low intensities, the etching mechanism is purely photochemical. In this regime, the width of patterns - which is about 115 nm at full width at half maximum (FWHM) - corresponds, approximately, to the diameter of the fiber tip. The vertical etch rate is of the order of 1 nm/s. With 514.5 nm Ar + -laser light etching is observed only at significantly higher laser-light intensities. Patterns with width down to about 30 nm at FWHM have been achieved. Here, the lateral resolution corresponds to about 1/18 of the laser wavelength employed

  6. Field-emission from parabolic tips: Current distributions, the net current, and effective emission area

    Science.gov (United States)

    Biswas, Debabrata

    2018-04-01

    Field emission from nano-structured emitters primarily takes place from the tips. Using recent results on the variation of the enhancement factor around the apex [Biswas et al., Ultramicroscopy 185, 1-4 (2018)], analytical expressions for the surface distribution of net emitted electrons, as well as the total and normal energy distributions are derived in terms of the apex radius Ra and the local electric field at the apex Ea. Formulae for the net emitted current and effective emission area in terms of these quantities are also obtained.

  7. Field emission properties of ZnO nanosheet arrays

    International Nuclear Information System (INIS)

    Naik, Kusha Kumar; Rout, Chandra Sekhar; Khare, Ruchita; More, Mahendra A.; Chakravarty, Disha; Late, Dattatray J.; Thapa, Ranjit

    2014-01-01

    Electron emission properties of electrodeposited ZnO nanosheet arrays grown on Indium tin oxide coated glass substrates have been studied. Influence of oxygen vacancies on electronic structures and field emission properties of ZnO nanosheets are investigated using density functional theory. The oxygen vacancies produce unshared d electrons which form an impurity energy state; this causes shifting of Fermi level towards the vacuum, and so the barrier energy for electron extraction reduces. The ZnO nanosheet arrays exhibit a low turn-on field of 2.4 V/μm at 0.1 μA/cm 2 and current density of 50.1 μA/cm 2 at an applied field of 6.4 V/μm with field enhancement factor, β = 5812 and good field emission current stability. The nanosheet arrays grown by a facile electrodeposition process have great potential as robust high performance vertical structure electron emitters for future flat panel displays and vacuum electronic device applications

  8. Novel field emission SEM column with beam deceleration technology

    Energy Technology Data Exchange (ETDEWEB)

    Jiruše, Jaroslav; Havelka, Miloslav; Lopour, Filip

    2014-11-15

    A novel field-emission SEM column has been developed that features Beam Deceleration Mode, high-probe current and ultra-fast scanning. New detection system in the column is introduced to detect true secondary electron signal. The resolution power at low energy was doubled for conventional SEM optics and moderately improved for immersion optics. Application examples at low landing energies include change of contrast, imaging of non-conductive samples and thin layers. - Highlights: • A novel field-emission SEM column has been developed. • Implemented beam deceleration improves the SEM resolution at 1 keV two times. • New column maintains high analytical potential and wide field of view. • Detectors integrated in the column allow gaining true SE and BE signal separately. • Performance of the column is demonstrated on low energy applications.

  9. Novel field emission SEM column with beam deceleration technology

    International Nuclear Information System (INIS)

    Jiruše, Jaroslav; Havelka, Miloslav; Lopour, Filip

    2014-01-01

    A novel field-emission SEM column has been developed that features Beam Deceleration Mode, high-probe current and ultra-fast scanning. New detection system in the column is introduced to detect true secondary electron signal. The resolution power at low energy was doubled for conventional SEM optics and moderately improved for immersion optics. Application examples at low landing energies include change of contrast, imaging of non-conductive samples and thin layers. - Highlights: • A novel field-emission SEM column has been developed. • Implemented beam deceleration improves the SEM resolution at 1 keV two times. • New column maintains high analytical potential and wide field of view. • Detectors integrated in the column allow gaining true SE and BE signal separately. • Performance of the column is demonstrated on low energy applications

  10. Silicon junctionless field effect transistors as room temperature terahertz detectors

    Energy Technology Data Exchange (ETDEWEB)

    Marczewski, J., E-mail: jmarcz@ite.waw.pl; Tomaszewski, D.; Zaborowski, M. [Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warsaw (Poland); Knap, W. [Institute of High Pressure Physics of the Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw (Poland); Laboratory Charles Coulomb, Montpellier University & CNRS, Place E. Bataillon, Montpellier 34095 (France); Zagrajek, P. [Institute of Optoelectronics, Military University of Technology, ul. gen. S. Kaliskiego 2, 00-908 Warsaw (Poland)

    2015-09-14

    Terahertz (THz) radiation detection by junctionless metal-oxide-semiconductor field-effect transistors (JL MOSFETs) was studied and compared with THz detection using conventional MOSFETs. It has been shown that in contrast to the behavior of standard transistors, the junctionless devices have a significant responsivity also in the open channel (low resistance) state. The responsivity for a photolithographically defined JL FET was 70 V/W and the noise equivalent power 460 pW/√Hz. Working in the open channel state may be advantageous for THz wireless and imaging applications because of its low thermal noise and possible high operating speed or large bandwidth. It has been proven that the junctionless MOSFETs can also operate in a zero gate bias mode, which enables simplification of the THz array circuitry. Existing models of THz detection by MOSFETs were considered and it has been demonstrated that the process of detection by these junctionless devices cannot be explained within the framework of the commonly accepted models and therefore requires a new theoretical approach.

  11. Field emission from a new type of electron source

    International Nuclear Information System (INIS)

    Mousa, M.S.

    1987-01-01

    A new type of field emission electron source has been developed. In this paper, the construction, characteristics and behaviour of tungsten micropoint emitters coated with a sub-micron layer of hydrocarbon using a TEM with poor ( ∼ 1 0 -3 torr) vacuum conditions are described. The hydrocarbon coating has been verified using the X-Ray energy dispersive analysis technique of a SEM. The technical capabilities and potential of the new type of electron source are compared with those of other comparable composite micropoint field emitters and other types of electron sources currently in use. The emission properties presented here include I-V characteristics, emission images and electron energy spectra of this type of composite micropoint emitters. The effect on the behaviour and characteristics of baking the coated emitters at temperatures ranging between 140 0 C and 350 0 C is also studied. The behaviour of the emitter has been interpreted in terms of a field-induced hot-electron emission mechanism associated with metal-insulator-vacuum (M-I-V) regime

  12. Electron field emission from undoped and doped DLC films

    International Nuclear Information System (INIS)

    Chakhovskoi, A G; Evtukh, A A; Felter, T E; Klyui, N I; Kudzinovsky, S Y; Litovchenko, V G; Litvin, Y M

    1999-01-01

    Electron field emission and electrical conductivity of undoped and nitrogen doped DLC films have been investigated. The films were grown by the PE CVD method from CH(sub 4):H(sub 2) and CH(sub 4):H(sub 2):N(sub 2) gas mixtures, respectively. By varying nitrogen content in the gas mixture over the range 0 to 45%, corresponding concentrations of 0 to 8% (atomic) could be achieved in the films. Three different gas pressures were used in the deposition chamber: 0.2, 0.6 and 0.8 Torr. Emission current measurements were performed at approximately 10(sup -6) Torr using the diode method with emitter-anode spacing set at 20(micro)m. The current - voltage characteristics of the Si field electron emission arrays covered with DLC films show that threshold voltage (V(sub th)) varies in a complex manner with nitrogen content. As a function of nitrogen content, V(sub th) initially increases rapidly, then decreases and finally increases again for the highest concentration. Corresponding Fowler-Nordheim (F-N) plots follow F-N tunneling over a wide range. The F-N plots were used for determination of the work function, threshold voltage, field enhancement factor and effective emission area. For a qualitative explanation of experimental results, we treat the DLC film as a diamond-like (sp(sup 3) bonded) matrix with graphite-like inclusions

  13. Films with discrete nano-DLC-particles as the field emission cascade

    International Nuclear Information System (INIS)

    Song Fengqi; Bu Haijun; Wan Jianguo; Wang Guanghou; Zhou Feng; He Longbing; Han Min; Zhou Jianfeng; Wang Xiaoshu

    2008-01-01

    Films with discrete diamond-like-carbon (DLC) nanoparticles were prepared by the deposition of the carbon nanoparticle beam. Their morphologies were imaged by scanning electron microscopy and atomic force microscopy (AFM). The nanoparticles were found to be distributed on the silicon (1 0 0) substrate discretely. Hemispherical shapes of the nanoparticles were demonstrated by the AFM line profile. Electron energy loss spectra were measured and an sp 3 ratio as high as 86% was found. Field-induced electron emission of the as-prepared cascade (nanoDLC/ Si) was tested and a current density of 1 mA cm -2 was achieved at 10.2 V μm -1 . (fast track communication)

  14. Nano-Filament Field Emission Cathode Development Final Report CRADA No. TSB-0731-93

    Energy Technology Data Exchange (ETDEWEB)

    Bernhardt, Tony [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Fahlen, Ted [Candescent Technologies Corporation, San Jose, CA (United States)

    2018-01-17

    At the time the CRADA was established, Silicon Video Corporation, of Cupertino, CA was a one-year-old rapidly growing start-up company. SVC was developing flat panel displays (FPDs) to replace Cathode Ray Terminals (CRTs) for personal computers, work stations and televisions. They planned to base their products on low cost and energy efficient field emission technology. It was universally recognized that the display was both the dominant cost item and differentiating feature of many products such as laptop computers and hand-held electronics and that control of the display technology through U.S. sources was essential to success in these markets. The purpose of this CRADA project was to determine if electrochemical planarization would be a viable, inexpensive alternative to current optical polishing techniques for planarizing the surface of a ceramic backplate of a thin film display.

  15. Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); Patil, Sandip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Kim, Tae-Gyu [Department of Nano System and Process Engineering, Pusan National University, 50 Cheonghak-ri, Samrangjin-eup, Miryang, Gyeongnam, Pusan 627-706 (Korea, Republic of); Yonekura, Daisuke [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); More, Mahendra A., E-mail: mam@physics.unipune.ac.in [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Joag, Dilip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.jp [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan)

    2011-01-01

    Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B{sub 2}O{sub 3} concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B{sub 2}O{sub 3} concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/{mu}m, respectively. The field emission current stability investigated at the preset value of {approx}1 {mu}A is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.

  16. Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

    International Nuclear Information System (INIS)

    Wang, Xiaoping; Wang, Jinye; Wang, Lijun

    2016-01-01

    A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8–17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9–5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm"2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

  17. Complex nano-patterning of structural, optical, electrical and electron emission properties of amorphous silicon thin films by scanning probe

    Czech Academy of Sciences Publication Activity Database

    Fait, Jan; Čermák, Jan; Stuchlík, Jiří; Rezek, Bohuslav

    2018-01-01

    Roč. 428, Jan (2018), s. 1159-1165 ISSN 0169-4332 R&D Projects: GA ČR GA15-01809S Institutional support: RVO:68378271 Keywords : amorphous silicon * nano-templates * nanostructures * electrical conductivity * electron emission * atomic force microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.387, year: 2016

  18. Influence of high-energy electron irradiation on field emission properties of multi-walled carbon nanotubes (MWCNTs) films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, Sandip S. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan); Dhole, Sanjay D. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); More, Mahendra A., E-mail: mam@physics.unipune.ac.i [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.j [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan)

    2011-04-15

    The effect of very high energy electron beam irradiation on the field emission characteristics of multi-walled carbon nanotubes (MWCNTs) has been investigated. The MWCNTs films deposited on silicon (Si) substrates were irradiated with 6 MeV electron beam at different fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films were characterized using scanning electron microscope (SEM) and micro-Raman spectrometer. The SEM analysis clearly revealed a change in surface morphology of the films upon irradiation. The Raman spectra of the irradiated films show structural damage caused by the interaction of high-energy electrons. The field emission studies were carried out in a planar diode configuration at the base pressure of {approx}1x10{sup -8} mbar. The values of the threshold field, required to draw an emission current density of {approx}1 {mu}A/cm{sup 2}, are found to be {approx}0.52, 1.9, 1.3 and 0.8 V/{mu}m for untreated, irradiated with fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films exhibit better emission current stability as compared to the untreated film. The improved field emission properties of the irradiated films have been attributed to the structural damage as revealed from the Raman studies.

  19. Discrete space charge affected field emission: Flat and hemisphere emitters

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, Kevin L., E-mail: kevin.jensen@nrl.navy.mil [Code 6854, Naval Research Laboratory, Washington, DC 20375 (United States); Shiffler, Donald A.; Tang, Wilkin [Air Force Research Laboratory, Kirtland AFB, New Mexico 87117 (United States); Rittersdorf, Ian M. [Code 6770, Naval Research Laboratory, Washington, DC 20375 (United States); Lebowitz, Joel L. [Department of Mathematics and Department of Physics, Rutgers University, Piscataway, New Jersey 08854-8019 (United States); Harris, John R. [U.S. Navy Reserve, New Orleans, Louisiana 70143 (United States); Lau, Y. Y. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States); Petillo, John J. [Leidos, Billerica, Massachusetts 01821 (United States); Luginsland, John W. [Physics and Electronics Directorate, AFOSR, Arlington, Virginia 22203 (United States)

    2015-05-21

    Models of space-charge affected thermal-field emission from protrusions, able to incorporate the effects of both surface roughness and elongated field emitter structures in beam optics codes, are desirable but difficult. The models proposed here treat the meso-scale diode region separate from the micro-scale regions characteristic of the emission sites. The consequences of discrete emission events are given for both one-dimensional (sheets of charge) and three dimensional (rings of charge) models: in the former, results converge to steady state conditions found by theory (e.g., Rokhlenko et al. [J. Appl. Phys. 107, 014904 (2010)]) but show oscillatory structure as they do. Surface roughness or geometric features are handled using a ring of charge model, from which the image charges are found and used to modify the apex field and emitted current. The roughness model is shown to have additional constraints related to the discrete nature of electron charge. The ability of a unit cell model to treat field emitter structures and incorporate surface roughness effects inside a beam optics code is assessed.

  20. FIELD EVALUATION OF LOW-EMISSION COAL BURNER TECHNOLOGY ON UTILITY BOILERS VOLUME III. FIELD EVALUATIONS

    Science.gov (United States)

    The report gives results of field tests conducted to determine the emission characteristics of a Babcock and Wilcox Circular burner and Dual Register burner (DRB). The field tests were performed at two utility boilers, generally comparable in design and size except for the burner...

  1. High temperature study of flexible silicon-on-insulator fin field-effect transistors

    KAUST Repository

    Diab, Amer El Hajj

    2014-09-29

    We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry\\'s most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

  2. A statistical model for field emission in superconducting cavities

    International Nuclear Information System (INIS)

    Padamsee, H.; Green, K.; Jost, W.; Wright, B.

    1993-01-01

    A statistical model is used to account for several features of performance of an ensemble of superconducting cavities. The input parameters are: the number of emitters/area, a distribution function for emitter β values, a distribution function for emissive areas, and a processing threshold. The power deposited by emitters is calculated from the field emission current and electron impact energy. The model can successfully account for the fraction of tests that reach the maximum field Epk in an ensemble of cavities, for eg, 1-cells at sign 3 GHz or 5-cells at sign 1.5 GHz. The model is used to predict the level of power needed to successfully process cavities of various surface areas with high pulsed power processing (HPP)

  3. Continuous measurements of N2O emissions from arable fields

    Science.gov (United States)

    Wallman, Magdalena; Lammirato, Carlo; Rütting, Tobias; Delin, Sofia; Weslien, Per; Klemedtsson, Leif

    2017-04-01

    Agriculture represents 59 % of the anthropogenic nitrous oxide (N2O) emissions, according to the IPCC (Ciais et al. 2013). N2O emissions are typically irregular and vary widely in time and space, which makes it difficult to get a good representation of the emissions (Henault et al. 2012), particularly if measurements have low frequency and/or cover only a short time period. Manual measurements are, for practical reasons, often short-term and low-frequent, or restricted to periods where emissions are expected to be high, e.g. after fertilizing. However, the nature of N2O emissions, being largely unpredictable, calls for continuous or near-continuous measurements over long time periods. So far, rather few long-term, high resolution measurements of N2O emissions from arable fields are reported; among them are Flessa et al. (2002) and Senapati et al. (2016). In this study, we have a two-year data set (2015-2017) with hourly measurements from ten automatic chambers, covering unfertilized controls as well as different nitrogen fertilizer treatments. Grain was produced on the field, and effects of tillage, harvest and other cropping measures were covered. What we can see from the experiment is that (a) the unfertilized control plots seem to follow the same emission pattern as the fertilized plots, at a level similar to the standard mineral fertilized plots (120 kg N ha-1 yr-1) and (b) freeze/thaw emissions are comparable in size to emissions after fertilizing. These two findings imply that the importance of fertilizing to the overall N2O emissions from arable soils may be smaller than previously expected. References: Ciais, P., C. Sabine, G. Bala, L. Bopp, V. Brovkin, J. Canadell et al. 2013: Carbon and Other Biogeochemical Cycles. In: Climate Change 2013: The Physical Science Basis. Contribution of Working Group I to the Fifth Assessment Report of the Intergovernmental Panel on Climate Change [Stocker, T.F., D. Qin, G.-K. Plattner, M. Tignor, S.K. Allen, J. Boschung et

  4. The enhanced nucleation factors and field electron emission property of diamond synthesized by RF-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Yang Guangmin [College of Physics, Changchun Normal University, Jilin Province, Changchun 130032 (China); Xu Qiang [Changchun Institute of Technology, Changchun 130021 (China); Wang Xin [Department of Materials Science, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); Zheng Weitao, E-mail: wtzheng@jlu.edu.cn [Department of Materials Science, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Submicron-diamond, microcrystalline diamond, and nanocrystalline diamond were synthesized using different substrates and pretreatment methods. Black-Right-Pointing-Pointer Three techniques have been developed to create some density of diamond on substrate surfaces by PECVD deposition procedure. Black-Right-Pointing-Pointer The field electron emission property was also investigated. - Abstract: In this work, submicron-diamond (SD), microcrystalline diamond (MD), and nanocrystalline diamond (ND) were synthesized using different substrates and pretreatment methods. In order to investigate influencing factors on nucleation, three techniques have been developed to create some density of diamond on substrate surfaces: (a) with chemical-etching technique (NaOH water solution at 80 Degree-Sign C for 3, 8, 15 min, respectively), (b) (Co(NO{sub 3}){sub 3}/Mg(NO{sub 3}){sub 2}{center_dot}6H{sub 2}O or Fe(NO{sub 3}){sub 3}{center_dot}9H{sub 2}O/Mg(NO{sub 3}){sub 2}{center_dot}6H{sub 2}O alcohol solution) dripping on silicon substrate, and (c) NaCl substrate directly by following a same PECVD deposition procedure. Furthermore, the field electron emission property was also investigated.

  5. Growth of vertically aligned arrays of carbon nanotubes for high field emission

    International Nuclear Information System (INIS)

    Kim, D.; Lim, S.H.; Guilley, A.J.; Cojocaru, C.S.; Bouree, J.E.; Vila, L.; Ryu, J.H.; Park, K.C.; Jang, J.

    2008-01-01

    Vertically aligned multi-walled carbon nanotubes have been grown on Ni-coated silicon substrates, by using either direct current diode or triode plasma-enhanced chemical vapor deposition at low temperature (around 620 deg. C). Acetylene gas has been used as the carbon source while ammonia and hydrogen have been used for etching. However densely packed (∼ 10 9 cm -2 ) CNTs were obtained when the pressure was ∼ 100 Pa. The alignment of nanotubes is a necessary, but not a sufficient condition in order to get an efficient electron emission: the growth of nanotubes should be controlled along regular arrays, in order to minimize the electrostatic interactions between them. So a three dimensional numerical simulation has been developed to calculate the local electric field in the vicinity of the tips for a finite square array of nanotubes and thus to calculate the maximum of the electron emission current density as a function of the spacing between nanotubes. Finally the triode plasma-enhanced process combined with pre-patterned catalyst films (using different lithography techniques) has been chosen in order to grow regular arrays of aligned CNTs with different pitches in the micrometer range. The comparison between the experimental and the simulation data permits to define the most efficient CNT-based electron field emitters

  6. Characterization of radiofrequency field emissions from smart meters.

    Science.gov (United States)

    Tell, Richard A; Kavet, Robert; Mezei, Gabor

    2013-01-01

    This study presents measurement data that describe radiofrequency emission levels and patterns from smart meters (rated nominally at 1 W) currently deployed in Pacific Gas and Electric Company's service territory in northern California. The smart meters in our investigation could not be set to operate continuously and required a Field Service Unit to induce short periods of emitted fields. To obtain peak field data under both laboratory and ambient conditions, a spectrum analyzer scanned across the 83 transmitting channels between 902 and 928 MHz used by the smart meter on a random frequency-hopping basis. To obtain data describing temporal emission patterns, the analyzer operated in scope mode. Duty cycle was estimated using transmit data acquired by the system operator from over 88,000 m. Instantaneous peak fields at 0.3 m in front of the meters were no more than 15% of the US Federal Communications Commission (FCC) exposure limit for the general public, and 99.9% of the meters operated with a duty cycle of 1.12% or less during the sampling period. In a sample of measurements in six single-detached residences equipped with individual smart meters, no interior measurement of peak field exceeded 1% of the FCC's general public exposure limit.

  7. N2O Emission from energy crop fields

    International Nuclear Information System (INIS)

    Joergensen, B.J.; Nyholm Joergensen, R.

    1996-03-01

    The interest in N 2 O emissions from soils with energy crops is a results of its properties as a greenhouse gas, since the global warming potential of N 2 O per unit mass is about 320 times greater than CO 2 . The contribution of N 2 O from the soil to the atmosphere may increase due to agricultural management. Consequently, large N 2 O emissions can lower the reduction of the greenhouse effect achieved by the substitution of fossil fuels by energy crops. For this reason it is crucial to find the crops for combustion with the lowest potential for emission of N 2 O from the soil per produced energy unit. The aims of this study were to assess the annual N 2 O flux from a Miscanthus 'Giganteus' (M. 'Giganteus') and winter rye (Secale cereale) field, and to investigate the factors affecting the N 2 O emission. To obtain these aims a method was developed for measurements in tall crops. The thesis contains a literature review on the N 2 O emission from the soils, a section with development of the technique for N 2 O flux measurements, and an experimental section. Finally, the thesis contains a section where the results are discussed in relation to the use of energy crops. In all the filed studies, the N 2 O emission was measured by using a new developed closed-chamber technique. The main advantages of the chamber method were the ability to contain growing plants up to a height of 3 m, and the relatively large area (2X2m) covered by each other. Soils with annual and perennial crops can be expected to emit less then 3 kg N 2 O ha -1 yr -1 . This amount corresponds to 960 kg CO 2 ha -1 yr -1 compared to a total CO 2 reduction of 10 to 19 tons CO 2 ha -1 yr -1 using the energy crops as substitution for fossil fuels. An efficient way to reduce the N 2 O emission is to exclude use of fertiliser but this also reduces the dry matter yield and consequently also the CO 2 reduction per unit dry matter. Following the guidelines for good agricultural practice concerning the

  8. Effects of potassium hydroxide post-treatments on the field-emission properties of thermal chemical vapor deposited carbon nanotubes.

    Science.gov (United States)

    Lee, Li-Ying; Lee, Shih-Fong; Chang, Yung-Ping; Hsiao, Wei-Shao

    2011-12-01

    In this study, a simple potassium hydroxide treatment was applied to functionalize the surface and to modify the structure of multi-walled carbon nanotubes grown on silicon substrates by thermal chemical vapor deposition. Scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and energy dispersive spectrometry were employed to investigate the mechanism causing the modified field-emission properties of carbon nanotubes. From our experimental data, the emitted currents of carbon nanotubes after potassium hydroxide treatment are enhanced by more than one order of magnitude compared with those of untreated carbon nanotubes. The emitted current density of carbon nanotubes increases from 0.44 mA/cm2 to 7.92 mA/cm2 after 30 minutes KOH treatment. This technique provides a simple, economical, and effective way to enhance the field-emission properties of carbon nanotubes.

  9. Optical Emissions of Sprite Streamers in Weak Electric Fields

    Science.gov (United States)

    Liu, N.; Pasko, V. P.

    2004-12-01

    Sprites commonly consist of large numbers of needle-shaped filaments of ionization [e.g., Gerken and Inan, JASTP, 65, 567, 2003] and typically initiate at altitudes 70-75 km in a form of upward and downward propagating streamers [Stanley et al., GRL, 26, 3201, 1999; Stenbaek-Nielsen et al., GRL, 27, 3829, 2000; McHarg et al., JGR, 107, 1364, 2002; Moudry et al., JASTP, 65, 509, 2003]. The strong electric fields E exceeding the conventional breakdown threshold field Ek are needed for initiation of sprite streamers from single electron avalanches and recent modeling studies indicate that streamers propagating in fields E>Ek experience strong acceleration and expansion in good agreement with the above cited observations [Liu and Pasko, JGR, 109, A04301, 2004]. The initiated streamers are capable of propagating in fields substantially lower than Ek [Allen and Ghaffar, J. Phys. D: Appl. Phys., 28, 331, 1995] and it is expected that a significant part of sprite optical output comes from regions with EEk). Additionally, the values of electric fields inside of the streamer channel are always well below Ek and since the excitation coefficients for optical emissions are very sensitive to the driving electric field magnitude most of the optical luminosity of streamers in this case arises from streamer tips, indicating that observed streamer filaments in many cases may be produced by time averaging of optical luminosity coming from localized regions around streamer tips as streamers move through an instrument's field of view. We will discuss pressure dependent differences of optical emissions at different sprite altitudes, and important similarities between observed sprite streamers and recent time resolved (van Veldhuizen et al., IEEE Trans. Plasma Sci., 30, 162, 2002; Yi and Williams, J. Phys. D. Appl. Phys., 35, 205, 2002].

  10. Investigation of field emission properties of laser irradiated tungsten

    International Nuclear Information System (INIS)

    Akram, Mahreen; Bashir, Shazia; Hayat, Asma; Mahmood, Khaliq; Jalil, Sohail Abdul; Rafique, Muhammad Shahid

    2018-01-01

    Nd:YAG laser irradiation of Tungsten (W) has been performed in air at atmospheric pressure for four laser fluences ranging from 130 to 500 J/cm 2 . Scanning electron microscope analysis revealed the formation of micro and nanoscale surface features including cones, grains, mounds and pores. Field emission (FE) studies have been performed in a planar diode configuration under ultra-high vacuum conditions by recording I-V characteristics and plotting corresponding electric field (E) versus emission current density (J). The Fowler-Nordheim (FN) plots are found to be linear confirming the quantum mechanical tunneling phenomena for the structured targets. The irradiated samples at different fluences exhibit a turn-on field, field enhancement factor β and a maximum current density ranging from 5 to 8.5 V/μm, 1300 to 3490 and 107 to 350 μA/cm 2 , respectively. The difference in the FE properties is attributed to the variation in the nature and density of the grown structures at different fluences. (orig.)

  11. Drawing the geometry of 3d transition metal-boron pairs in silicon from electron emission channeling experiments

    CERN Document Server

    Silva, Daniel; Wahl, Ulrich; Martins Correia, Joao; Augustyns, Valerie; De Lemos Lima, Tiago Abel; Granadeiro Costa, Angelo Rafael; David Bosne, Eric; Castro Ribeiro Da Silva, Manuel; Esteves De Araujo, Araujo Joao Pedro; Da Costa Pereira, Lino Miguel

    2016-01-01

    Although the formation of transition metal-boron pairs is currently well established in silicon processing, the geometry of these complexes is still not completely understood. We investigated the lattice location of the transition metals manganese, iron, cobalt and nickel in n- and p+-type silicon by means of electron emission channeling. For manganese, iron and cobalt, we observed an increase of sites near the ideal tetrahedral interstitial position by changing the doping from n- to p+-type Si. Such increase was not observed for Ni. We ascribe this increase to the formation of pairs with boron, driven by Coulomb interactions, since the majority of iron, manganese and cobalt is positively charged in p+-type silicon while Ni is neutral. We propose that breathing mode relaxation around the boron ion within the pair causes the observed displacement from the ideal tetrahedral interstitial site. We discuss the application of the emission channeling technique in this system and, in particular, how it provides insi...

  12. From physics to devices light emissions in silicon from physics to devices

    CERN Document Server

    Lockwood, David J; Weber, Eicke R; Lockwood, David J

    1997-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this traditi...

  13. Vertically aligned zinc selenide nanoribbon arrays: microstructure and field emission

    International Nuclear Information System (INIS)

    Zhao Lijuan; Pang Qi; Cai Yuan; Wang Ning; Ge Weikun; Wang Jiannong; Yang Shihe

    2007-01-01

    Uniform ZnSe precursor (ZnSe : 0.38en, en = ethylenediamine) nanoribbon arrays are grown vertically on Zn foils in ethylenediamine (en) using a solvothermal method. After the annealing treatment in N 2 , the ZnSe nanoribbon arrays can be obtained without an obvious morphology change and the crystallinity of ribbons is greatly improved. The microstructures of both individual ZnSe precursor and ZnSe nanoribbons are investigated. Field emission characteristics show that the onset field required drawing a current density of ∼0.1 μ A cm -2 from the ZnSe nanoribbons is 5.0 V μm -1 and the field enhancement factors are determined to be ∼1382

  14. Electronic field emission models beyond the Fowler-Nordheim one

    Science.gov (United States)

    Lepetit, Bruno

    2017-12-01

    We propose several quantum mechanical models to describe electronic field emission from first principles. These models allow us to correlate quantitatively the electronic emission current with the electrode surface details at the atomic scale. They all rely on electronic potential energy surfaces obtained from three dimensional density functional theory calculations. They differ by the various quantum mechanical methods (exact or perturbative, time dependent or time independent), which are used to describe tunneling through the electronic potential energy barrier. Comparison of these models between them and with the standard Fowler-Nordheim one in the context of one dimensional tunneling allows us to assess the impact on the accuracy of the computed current of the approximations made in each model. Among these methods, the time dependent perturbative one provides a well-balanced trade-off between accuracy and computational cost.

  15. Molecular dynamics simulations of field emission from a planar nanodiode

    Energy Technology Data Exchange (ETDEWEB)

    Torfason, Kristinn; Valfells, Agust; Manolescu, Andrei [School of Science and Engineering, Reykjavik University, Menntavegur 1, IS-101 Reykjavik (Iceland)

    2015-03-15

    High resolution molecular dynamics simulations with full Coulomb interactions of electrons are used to investigate field emission in planar nanodiodes. The effects of space-charge and emitter radius are examined and compared to previous results concerning transition from Fowler-Nordheim to Child-Langmuir current [Y. Y. Lau, Y. Liu, and R. K. Parker, Phys. Plasmas 1, 2082 (1994) and Y. Feng and J. P. Verboncoeur, Phys. Plasmas 13, 073105 (2006)]. The Fowler-Nordheim law is used to determine the current density injected into the system and the Metropolis-Hastings algorithm to find a favourable point of emission on the emitter surface. A simple fluid like model is also developed and its results are in qualitative agreement with the simulations.

  16. SensL B-Series and C-Series silicon photomultipliers for time-of-flight positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    O' Neill, K., E-mail: koneill@sensl.com; Jackson, C., E-mail: cjackson@sensl.com

    2015-07-01

    Silicon photomultipliers from SensL are designed for high performance, uniformity and low cost. They demonstrate peak photon detection efficiency of 41% at 420 nm, which is matched to the output spectrum of cerium doped lutetium orthosilicate. Coincidence resolving time of less than 220 ps is demonstrated. New process improvements have lead to the development of C-Series SiPM which reduces the dark noise by over an order of magnitude. In this paper we will show characterization test results which include photon detection efficiency, dark count rate, crosstalk probability, afterpulse probability and coincidence resolving time comparing B-Series to the newest pre-production C-Series. Additionally we will discuss the effect of silicon photomultiplier microcell size on coincidence resolving time allowing the optimal microcell size choice to be made for time of flight positron emission tomography systems.

  17. An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

    International Nuclear Information System (INIS)

    Liu Ying; He Jin; Chan Mansun; Ye Yun; Zhao Wei; Wu Wen; Deng Wan-Ling; Wang Wen-Ping; Du Cai-Xia

    2014-01-01

    An analytical model of gate-all-around (GAA) silicon nanowire tunneling field effect transistors (NW-TFETs) is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling (BTBT) efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane's expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

    Science.gov (United States)

    Sabanskis, A.; Virbulis, J.

    2018-05-01

    Mathematical modelling is employed to numerically analyse the dynamics of the Czochralski (CZ) silicon single crystal growth. The model is axisymmetric, its thermal part describes heat transfer by conduction and thermal radiation, and allows to predict the time-dependent shape of the crystal-melt interface. Besides the thermal field, the point defect dynamics is modelled using the finite element method. The considered process consists of cone growth and cylindrical phases, including a short period of a reduced crystal pull rate, and a power jump to avoid large diameter changes. The influence of the thermal stresses on the point defects is also investigated.

  19. Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission

    Science.gov (United States)

    Fischer, M.; Sperlich, A.; Kraus, H.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

    2018-05-01

    We investigate the pump efficiency of silicon-vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.

  20. A thermal model for czochralski silicon crystal growth with an axial magnetic field

    Science.gov (United States)

    Hjellming, L. N.

    1990-07-01

    This paper presents a thermal model for molten silicon in a Czochralski crystal puller system with an applied uniform axial magnetic field. The melt depth is treated as continually decreasing, which affects the thermal environment of the melt and crystal. The radiative heat loss and the input heat flux are treated as functions of time, with a constraint placed on the heat lost to the crystal from the melt. As the melt motion reaches a steady state rapidly, the temperature and flow fields are treated as instantaneously steady at each melt depth. The heat transport is a mixture of conduction and convection, and by considering the crystal and crucible to be rotating with the same angular velocity, the flows driven by buoyancy and thermocapillarity are isolated and provide the convective heat transport in the melt for the range of magnetic field strengths 0.2 ≤ B ≤ 1.0T.

  1. Electrorheology of a zeolite/silicone oil suspension under dc fields

    International Nuclear Information System (INIS)

    Tian, Yu; Meng, Yonggang; Wen, Shizhu

    2001-01-01

    The electrorheology of electrorheological (ER) fluids based on zeolite and silicone oil under dc fields was investigated at room temperature. ER fluids with volume fractions of 27% and 30% were prepared and tested. When a 5 kV/mm dc field was applied, shear yield stress of 26.7 kPa was obtained for the latter. The ER fluid with a higher volume fraction of zeolite had a higher current density and a higher shear yield stress under the same electric field. Compared with other ER fluids based on zeolite particles with low shear yield stress, the zeolite employed by us was found to have high dielectric constant and conductivity. The high permittivity mismatch and the high conductivity mismatch of the components of the fluids were considered responsible for the high shear yield stress. [copyright] 2001 American Institute of Physics

  2. On the nature of high field charge transport in reinforced silicone dielectrics: Experiment and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yanhui, E-mail: huangy12@rpi.edu; Schadler, Linda S. [Department of Material Science and Engineering, Rensselaer Polytechnic Institute, 110 8th street, Troy, New York 12180 (United States)

    2016-08-07

    The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field and were compared with the properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial in determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails and is successfully verified by a Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to the non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.

  3. Field-emission property of self-purification SiC/SiOx coaxial nanowires synthesized via direct microwave irradiation using iron-containing catalyst

    Science.gov (United States)

    Zhou, Qing; Yu, Yongzhi; Huang, Shan; Meng, Jiang; Wang, Jigang

    2017-07-01

    SiC/SiOx coaxial nanowires were rapidly synthesized via direct microwave irradiation in low vacuum atmosphere. During the preparation process, only graphite, silicon, silicon dioxide powders were used as raw materials and iron-containing substance was employed as catalyst. Comprehensive characterizations were employed to investigate the microstructure of the products. The results showed that a great quantity of coaxial nanowires with uniform sizes and high aspect ratio had been successfully achieved. The coaxial nanowires consist of a silicon oxide (SiOx) shell and a β-phase silicon carbide (β-SiC) core that exhibited in special tube brush like. In additional, nearly all the products were achieved in the statement of pure SiC/SiOx coaxial nanowires without the existence of metallic catalyst, indicating that the self-removal of iron (Fe) catalyst should be occurred during the synthesis process. Photoluminescence (PL) spectral analysis result indicated that such novel SiC/SiOx coaxial nanowires exhibited significant blue-shift. Besides, the measurement results of field-emission (FE) demonstrated that the SiC/SiOx coaxial nanowires had ultralow turn-on field and threshold field with values of 0.2 and 2.1 V/μm, respectively. The hetero-junction structure formed between SiOx shell and SiC core, lots of emission sites, as well as clear tips of the nanowires were applied to explain the excellent FE properties.[Figure not available: see fulltext.

  4. Soliton emission stimulated by sound wave or external field

    International Nuclear Information System (INIS)

    Malomed, B.A.

    1987-01-01

    Langmuir soliton interaction with ion-acoustic wave results in soliton radiative decay at the expence of emission by the soliton of linear langmuir waves. Intensity of this radiation in the ''subsonic'' regime as well as the rate of energy transfer from acoustic waves to langmuir ones and soliton decay rate are calculated. Three cases are considered: monochromatic acoustic wave, nonmonochromatic wave packet with a wide spectrum, random acoustic field, for which results appear to be qualitatively different. A related problem, concerning the radiation generation by soliton under external electromagnetic wave effect is also considered. Dissipation effect on radiation is investigated

  5. Performance of a carbon nanotube field emission electron gun

    Science.gov (United States)

    Getty, Stephanie A.; King, Todd T.; Bis, Rachael A.; Jones, Hollis H.; Herrero, Federico; Lynch, Bernard A.; Roman, Patrick; Mahaffy, Paul

    2007-04-01

    A cold cathode field emission electron gun (e-gun) based on a patterned carbon nanotube (CNT) film has been fabricated for use in a miniaturized reflectron time-of-flight mass spectrometer (RTOF MS), with future applications in other charged particle spectrometers, and performance of the CNT e-gun has been evaluated. A thermionic electron gun has also been fabricated and evaluated in parallel and its performance is used as a benchmark in the evaluation of our CNT e-gun. Implications for future improvements and integration into the RTOF MS are discussed.

  6. Photo field emission spectroscopy of the tantalum band structure

    International Nuclear Information System (INIS)

    Kleint, Ch.; Radon, T.

    1978-01-01

    Photo field emission (PFE) currents of clean and barium covered tantalum tips have been measured with single lines of the mercury arc spectrum and phase-sensitive detection. Field strength and work function were determined from Fowler-Nordheim plots of the FE currents. Shoulders in the PFE current-voltage characteristics could be correlated to transitions in the band structure of tantalum according to a recently proposed two-step PFE model. A comparison with the relativistic calculations of Mattheiss and the nonrelativistic bands of Petroff and Viswanathan shows that Mattheiss' bands are more appropriate. Beside direct transitions several nondirect transitions from the different features composing the upper two density of states maxima below the Fermi edge of tantalum have been found. (Auth.)

  7. Graphene enhanced field emission from InP nanocrystals.

    Science.gov (United States)

    Iemmo, L; Di Bartolomeo, A; Giubileo, F; Luongo, G; Passacantando, M; Niu, G; Hatami, F; Skibitzki, O; Schroeder, T

    2017-12-08

    We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

  8. Study of the silicon photomultipliers and their applications in positron emission tomography

    International Nuclear Information System (INIS)

    Xu, Chen

    2014-05-01

    This thesis deals with silicon photomultipliers (SiPM) used in scintillation detectors and their applications in positron emission tomography (PET). The study of the SiPM is mainly focused on the application to the proposed EndoTOFPET-US detector, which is a multi-modality PET detector facilitating the development of new biomarkers for pancreas and prostate cancers. A Monte Carlo simulation tool is developed for the optimization of the detector's single channel design. In order to obtain a 200 ps system coincidence time resolution and maximize the detector sensitivity, the requirements for the crystal geometry, light yield and SiPM photon detection efficiency are specified based on the simulation study. In addition, the nonlinear response of the SiPM can be corrected by the simulation tool and the energy resolution of the detector is extracted. A series of measurements are established to characterize SiPMs in a fast and reliable way with high precision. The static characterization measures the value of different components in the derived electrical model of the SiPM, whereas the dynamic characterization extracts parameters that is crucial for the operation of the SiPM. Several SiPM samples are tested and their characteristics are compared. The developed setup and the precision of the measurement fulfill the requirements of the quality assurance test for the commissioning of the EndoTOFPET-US detector. The test foresees large quantities of SiPMs to be characterized. In addition, the developed measuring procedure has contributed to the study of X-ray induced surface damage of a SiPM from Hamamatsu. Characteristics of the device are measured before and after irradiating the SiPM with different X-ray doses, the results are compared and discussed. A comparative study of a digital and an analog SiPM in gamma spectroscopy with the inorganic scintillator is presented. The characteristics of a prototype digital SiPM that is developed for the EndoTOFPETUS detector is

  9. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    Energy Technology Data Exchange (ETDEWEB)

    Menges, F.; Spieser, M.; Riel, H.; Gotsmann, B., E-mail: bgo@zurich.ibm.com [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Dittberner, M. [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Novotny, L. [Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Passarello, D.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)

    2016-04-25

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  10. Thermionic field emission in gold nitride Schottky nanodiodes

    Science.gov (United States)

    Spyropoulos-Antonakakis, N.; Sarantopoulou, E.; Kollia, Z.; Samardžija, Z.; Kobe, S.; Cefalas, A. C.

    2012-11-01

    We report on the thermionic field emission and charge transport properties of gold nitride nanodomains grown by pulsed laser deposition with a molecular fluorine laser at 157 nm. The nanodomains are sandwiched between the metallic tip of a conductive atomic force microscope and a thin gold layer forming thus a metal-semiconductor-metal junction. Although the limited existing data in the literature indicate that gold nitride was synthesized previously with low efficiency, poor stability, and metallic character; in this work, it is shown that gold nitride nanodomains exhibit semiconducting behavior and the metal-semiconductor-metal contact can be modeled with the back-to-back Schottky barrier model. From the experimental I-V curves, the main charge carrier transport process is found to be thermionic field emission via electron tunneling. The rectifying, near symmetric and asymmetric current response of nanocontacts is related to the effective contact area of the gold nitride nanodomains with the metals. A lower limit for the majority charge carriers concentration at the boundaries of nanodomains is also established using the full depletion approximation, as nanodomains with thickness as low as 6 nm were found to be conductive. Current rectification and charge memory effects are also observed in "quite small" conductive nanodomains (6-10 nm) due to stored charges. Indeed, charges near the surface are identified as inversion domains in the phase shift mapping performed with electrostatic force microscopy and are attributed to charge trapping at the boundaries of the nanodomains.

  11. N{sub 2}O Emission from energy crop fields

    Energy Technology Data Exchange (ETDEWEB)

    Joergensen, B.J. [The Royal Veterinary and Agricultural Univ., Dept. of Agricultural Sciences, Section of Soil, Water and Plant Nutrition (Denmark); Nyholm Joergensen, R. [Research Centre Foulum, The Danish Inst. of Plant and Soil Science, Dept. of Soil Science (Denmark)

    1996-03-01

    The interest in N{sub 2}O emissions from soils with energy crops is a results of its properties as a greenhouse gas, since the global warming potential of N{sub 2}O per unit mass is about 320 times greater than CO{sub 2}. The contribution of N{sub 2}O from the soil to the atmosphere may increase due to agricultural management. Consequently, large N{sub 2}O emissions can lower the reduction of the greenhouse effect achieved by the substitution of fossil fuels by energy crops. For this reason it is crucial to find the crops for combustion with the lowest potential for emission of N{sub 2}O from the soil per produced energy unit. The aims of this study were to assess the annual N{sub 2}O flux from a Miscanthus `Giganteus` (M. `Giganteus`) and winter rye (Secale cereale) field, and to investigate the factors affecting the N{sub 2}O emission. To obtain these aims a method was developed for measurements in tall crops. The thesis contains a literature review on the N{sub 2}O emission from the soils, a section with development of the technique for N{sub 2}O flux measurements, and an experimental section. Finally, the thesis contains a section where the results are discussed in relation to the use of energy crops. In all the filed studies, the N{sub 2}O emission was measured by using a new developed closed-chamber technique. The main advantages of the chamber method were the ability to contain growing plants up to a height of 3 m, and the relatively large area (2X2m) covered by each other. Soils with annual and perennial crops can be expected to emit less then 3 kg N{sub 2}O ha{sup -1} yr{sup -1}. This amount corresponds to 960 kg CO{sub 2} ha{sup -1} yr{sup -1} compared to a total CO{sub 2} reduction of 10 to 19 tons CO{sub 2} ha{sup -1} yr{sup -1} using the energy crops as substituion for fossil fuels. An efficient way to reduce the N{sub 2}O emission is to exclude use of fertiliser but this also reduces the dry matter yield and consequently also the CO{sub 2} reduction

  12. N{sub 2}O Emission from energy crop fields

    Energy Technology Data Exchange (ETDEWEB)

    Joergensen, B.J. [The Royal Veterinary and Agricultural Univ., Dept. of Agricultural Sciences, Section of Soil, Water and Plant Nutrition (Denmark); Nyholm Joergensen, R. [Research Centre Foulum, The Danish Inst. of Plant and Soil Science, Dept. of Soil Science (Denmark)

    1996-03-01

    The interest in N{sub 2}O emissions from soils with energy crops is a results of its properties as a greenhouse gas, since the global warming potential of N{sub 2}O per unit mass is about 320 times greater than CO{sub 2}. The contribution of N{sub 2}O from the soil to the atmosphere may increase due to agricultural management. Consequently, large N{sub 2}O emissions can lower the reduction of the greenhouse effect achieved by the substitution of fossil fuels by energy crops. For this reason it is crucial to find the crops for combustion with the lowest potential for emission of N{sub 2}O from the soil per produced energy unit. The aims of this study were to assess the annual N{sub 2}O flux from a Miscanthus 'Giganteus' (M. 'Giganteus') and winter rye (Secale cereale) field, and to investigate the factors affecting the N{sub 2}O emission. To obtain these aims a method was developed for measurements in tall crops. The thesis contains a literature review on the N{sub 2}O emission from the soils, a section with development of the technique for N{sub 2}O flux measurements, and an experimental section. Finally, the thesis contains a section where the results are discussed in relation to the use of energy crops. In all the filed studies, the N{sub 2}O emission was measured by using a new developed closed-chamber technique. The main advantages of the chamber method were the ability to contain growing plants up to a height of 3 m, and the relatively large area (2X2m) covered by each other. Soils with annual and perennial crops can be expected to emit less then 3 kg N{sub 2}O ha{sup -1} yr{sup -1}. This amount corresponds to 960 kg CO{sub 2} ha{sup -1} yr{sup -1} compared to a total CO{sub 2} reduction of 10 to 19 tons CO{sub 2} ha{sup -1} yr{sup -1} using the energy crops as substitution for fossil fuels. An efficient way to reduce the N{sub 2}O emission is to exclude use of fertiliser but this also reduces the dry matter yield and consequently also the

  13. Synthesis and field emission characteristics of carbon nanocoils with a high aspect ratio supported by copper micro-tips

    International Nuclear Information System (INIS)

    Sung, Woo Yong; Ok, Jong Girl; Kim, Wal Jun; Lee, Seung Min; Yeon, Soon Chang; Lee, Ho Young; Kim, Yong Hyup

    2007-01-01

    Carbon nanocoils (CNCs) were synthesized via thermal chemical vapour deposition (CVD) with C 2 H 2 and NH 3 gases at 600 deg. C. A Ni catalyst was placed upon the copper micro-tip structures that were fabricated on a silicon substrate. Our CNCs had a long rope shape with a length not exceeding 100 μm and a nanoscale diameter. The copper micro-tips were formed through high current pulse electroplating, which played a significant role in characterizing our CNCs. The CNCs grown on the copper micro-tips showed outstanding field emission performance and long-term stability. Their turn-on field, defined as that at a current density of 10 μA cm -2 , was 1.30 V μm -1 and the maximum current density reached 11.17 mA cm -2 at an electric field of 2.39 V μm -1

  14. Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

    Science.gov (United States)

    Cazimajou, T.; Legallais, M.; Mouis, M.; Ternon, C.; Salem, B.; Ghibaudo, G.

    2018-05-01

    We studied the current-voltage characteristics of percolating networks of silicon nanowires (nanonets), operated in back-gated transistor mode, for future use as gas or biosensors. These devices featured P-type field-effect characteristics. It was found that a Lambert W function-based compact model could be used for parameter extraction of electrical parameters such as apparent low field mobility, threshold voltage and subthreshold slope ideality factor. Their variation with channel length and nanowire density was related to the change of conduction regime from direct source/drain connection by parallel nanowires to percolating channels. Experimental results could be related in part to an influence of the threshold voltage dispersion of individual nanowires.

  15. Two-photon cooperative emission in the presence of athermal electromagnetic field

    International Nuclear Information System (INIS)

    Enaki, N.A.; Mihalache, D.

    1997-01-01

    The possibility of cooperative spontaneous two-photon emission of an extended radiators system and the influence of the external thermal electromagnetic field on the spontaneous emission rate, in such a system, are investigated. It is concluded that, in an external electromagnetic field, the two-photon cooperative emission rate increases significantly. The importance of this effect on the emission of gamma rays from inverted long-lived isomers triggered by X-ray thermal fields, is emphasized

  16. Coaxial-structured ZnO/silicon nanowires extended-gate field-effect transistor as pH sensor

    International Nuclear Information System (INIS)

    Li, Hung-Hsien; Yang, Chi-En; Kei, Chi-Chung; Su, Chung-Yi; Dai, Wei-Syuan; Tseng, Jung-Kuei; Yang, Po-Yu; Chou, Jung-Chuan; Cheng, Huang-Chung

    2013-01-01

    An extended-gate field-effect transistor (EGFET) of coaxial-structured ZnO/silicon nanowires as pH sensor was demonstrated in this paper. The oriented 1-μm-long silicon nanowires with the diameter of about 50 nm were vertically synthesized by the electroless metal deposition method at room temperature and were sequentially capped with the ZnO films using atomic layer deposition at 50 °C. The transfer characteristics (I DS –V REF ) of such ZnO/silicon nanowire EGFET sensor exhibited the sensitivity and linearity of 46.25 mV/pH and 0.9902, respectively for the different pH solutions (pH 1–pH 13). In contrast to the ZnO thin-film ones, the ZnO/silicon nanowire EGFET sensor achieved much better sensitivity and superior linearity. It was attributed to a high surface-to-volume ratio of the nanowire structures, reflecting a larger effective sensing area. The output voltage and time characteristics were also measured to indicate good reliability and durability for the ZnO/silicon nanowires sensor. Furthermore, the hysteresis was 9.74 mV after the solution was changed as pH 7 → pH 3 → pH 7 → pH 11 → pH 7. - Highlights: ► Coaxial-structured ZnO/silicon nanowire EGFET was demonstrated as pH sensor. ► EMD and ALD methods were proposed to fabricate ZnO/silicon nanowires. ► ZnO/silicon nanowire EGFET sensor achieved better sensitivity and linearity. ► ZnO/silicon nanowire EGFET sensor had good reliability and durability

  17. Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.

    Science.gov (United States)

    Eklund, Karin; Ahnesjö, Anders

    2010-11-01

    Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode

  18. On the role of non-bridging oxygen centers in the red luminescence emission from silicon nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Borsella, Elisabetta; D' Amato, Rosaria; Fabbri, Fabio [ENEA, C. R. Frascati, via E. Fermi 45, 00044 Frascati, Roma (Italy); Falconieri, Mauro [ENEA, C. R. Casaccia, via Anguillarese 301, 00123 Roma (Italy); Trave, Enrico [Physical Chemistry Department, Universita Ca' Foscari Venezia, Dorsoduro 2137, 30123 Venezia (Italy); Bello, Valentina; Mattei, Giovanni [Physics Department, Universita degli Studi di Padova, Via Marzolo 8, 35131 Padova (Italy); Nie, Yaru; Wang, Dayang [Max Planck Institute of Colloids and Interfaces, 14424 Potsdam (Germany)

    2011-03-15

    The process responsible for visible-near infrared luminescence emission in Si nanostructures has been generating significant controversy for years. The debate has focused on whether light emission is originated by recombination of quantum confined excitons or by defects located at the surface. It is experimentally difficult to distinguish the two contributions since both are size-dependent. Moreover, all the studies were performed on different systems and consequently the comparisons were not free from ambiguities. Here we relate the spectroscopic properties of pyrolytic Si nanocrystals, aged in air, and after complete conversion to amorphous silica by alkali etching-assisted oxidation. The strong resemblance of the spectral and time decay behavior of the red PL emission in both systems (surface oxidized nanocrystalline Si and amorphous silica sample) indicates that this emission is dominated by defects in the silicon oxide. The strongly non-exponential time behavior of the photo-luminescence emission in both systems can be modeled as the sum of exponential decays from the emitting defects, thus ruling out the interpretation in terms of the so-called ''stretched exponential'' decay. Using this model we also obtained the emission energy and inhomogeneous linewidth of the luminescent defects, allowing us to identify them as the non-bridging oxygen hole centers. The emission energy of these defects depends strongly on their physical and chemical environment and can produce a shift apparently due to the size effect. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Hydrothermal deposition and characterization of silicon oxide nanospheres

    International Nuclear Information System (INIS)

    Pei, L.Z.

    2008-01-01

    Silicon oxide nanospheres with the average diameter of about 100 nm have been synthesized by hydrothermal deposition process using silicon and silica as the starting materials. The silicon oxide nanospheres were characterized by field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectrum (EDS), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) spectrum, respectively. The results show that large scale silicon oxide nanospheres with the uniform size are composed of Si and O showing the amorphous structure. Strong PL peak at 435 nm is observed demonstrating the good blue light emission property

  20. The influence of magnetic fields on absorption and emission spectroscopy

    International Nuclear Information System (INIS)

    Zhang, Heshou; Yan, Huirong

    2016-10-01

    Spectroscopic observations play essential roles in astrophysics. They are crucial for determining important physical parameters, providing information about the composition of various objects in the universe, as well as depicting motions in the universe. However, spectroscopic studies often do not consider the influence of magnetic fields. In this paper, we explore the influence of magnetic fields on the spectroscopic observations arising from Ground State Alignment (GSA). Synthetic spectra are generated to show the measurable changes of the spectra due to GSA. The influences of atomic alignment on absorption from DLAs, emission from H II Regions, submillimeter fine-structure lines from star forming regions are presented as examples to illustrate the effect in diffuse gas. Furthermore, we demonstrate the influence of atomic alignment on physical parameters derived from spectral line ratios, such as the alpha-to-iron ratio([X/Fe]), interstellar temperature, and ionization rate. Results in our paper show that due to GSA, magnetic fields will affect the spectra of diffuse gas with high signal-to-noise(S/N) ratio under the condition that photon-excitation is much more efficient than thermal collision.

  1. Vacuum field energy and spontaneous emission in anomalously dispersive cavities

    International Nuclear Information System (INIS)

    Bradshaw, Douglas H.; Di Rosa, Michael D.

    2011-01-01

    Anomalously dispersive cavities, particularly white-light cavities, may have larger bandwidth to finesse ratios than their normally dispersive counterparts. Partly for this reason, they have been proposed for use in laser interferometer gravitational-wave observatory (LIGO)-like gravity-wave detectors and in ring-laser gyroscopes. In this paper we analyze the quantum noise associated with anomalously dispersive cavity modes. The vacuum field energy associated with a particular cavity mode is proportional to the cavity-averaged group velocity of that mode. For anomalously dispersive cavities with group index values between 1 and 0, this means that the total vacuum field energy associated with a particular cavity mode must exceed (ℎ/2π)ω/2. For white-light cavities in particular, the group index approaches zero and the vacuum field energy of a particular spatial mode may be significantly enhanced. We predict enhanced spontaneous emission rates into anomalously dispersive cavity modes and broadened laser linewidths when the linewidth of intracavity emitters is broader than the cavity linewidth.

  2. New results on RF and DC field emission

    International Nuclear Information System (INIS)

    Padamsee, H.; Kirchgessner, J.; Moffat, D.; Noer, R.; Rubin, D.; Sears, J.; Shu, Q.S.

    1990-01-01

    This paper reviews progress in RF and DC field emission since the last workshop held two years ago at Argonne National Laboratory. Through better characterization, progress has been made towards improved understanding of FE in cavities. Through development of new cures, gains have made towards higher fields. Through better rinsing procedures low-frequency (500 and 350 MHz) cavities regularly reach surface electric fields of 20 MV/m. Processing times are substantially reduced. Through heat treatment at 1350degC high frequency (1500 MHz) cavities have reached 53 MV/m, and 3000 MHz cavities have reached 70 MV/m. The state of the art in Epk is described first. Then, benefits of high temperature treatment are discussed, focusing on highest temperature (1300-1350degC) treatment, intermediate heat treatments, and heat treatment without final methanol rinsing. He processing, heat treatment of 3-GHz cavitie, general inferences concerning emitter properties, influence of condensed gases, and sources of emitters are also addressed. Finally, lessons to be learned from copper cavities and high power processing is pointed out and discussed. (N.K.)

  3. Particle Acceleration, Magnetic Field Generation and Emission from Relativistic Jets

    Science.gov (United States)

    Nishikawa, K.-I.; Hardee, P.; Hededal, C.; Mizuno, Yosuke; Fishman, G. Jerry; Hartmann, D. H.

    2006-01-01

    Nonthermal radiation observed from astrophysical systems containing relativistic jets and shocks, e.g., active galactic nuclei (AGNs), gamma-ray bursts (GRBs), supernova remnants, and Galactic microquasar systems usually have power-law emission spectra. Fermi acceleration is the mechanism usually assumed for the acceleration of particles in astrophysical environments. Recent PIC simulations using injected relativistic electron-ion (electro-positron) jets show that particle acceleration occurs within the downstream jet, rather than by the scattering of particles back and forth across the shock as in Fermi acceleration. Shock acceleration' is a ubiquitous phenomenon in astrophysical plasmas. Plasma waves and their associated instabilities (e.g., the Buneman instability, other two-streaming instability, and the Weibel instability) created in the shocks are responsible for particle (electron, positron, and ion) acceleration. The simulation results show that the Weibel instability is responsible for generating and amplifying highly nonuniform, small-scale magnetic fields. These magnetic fields contribute to the electron's transverse deflection behind the jet head. The "jitter" radiation from deflected electrons has different spectral properties than synchrotron radiation which is calculated in a uniform magnetic field. This jitter radiation may be important to understanding the complex time evolution and/or spectral structure in gamma-ray bursts, relativistic jets, and supernova remnants. We will review recent PIC simulations of relativistic jets and try to make a connection with observations.

  4. Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET

    Directory of Open Access Journals (Sweden)

    Frederick Ojiemhende Ehiagwina

    2016-09-01

    Full Text Available Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si.  A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

  5. Performance of a field emission gun TEM/STEM

    International Nuclear Information System (INIS)

    Carpenter, R.W.; Bentley, J.

    1979-01-01

    First experimental results on a Phillips EM 400 TEM/STEM fitted with a field-emission electron gun and objective twin lens are given here. Operation of the FEG is reliable up to maximum design voltage (120 kV). Highest resolution achieved in TEM was 1.9 A fringe. A wide variety of diffraction modes were demonstrated, ranging from CBDP from a small area (approx. 10 A dia) in STEM mode to SAD with angular resolution of 8 μrad in TEM mode. The EDS sensitivity is very high. STEM imaging performance to the highest magnifications examined (200 kx) is good. Work is in progress to evaluate the limits of STEM performance

  6. Enhanced Field Emission Studies on Niobium Surfaces Relevant to High Field Superconducting Radio-Frequency Devices

    International Nuclear Information System (INIS)

    Tong Wang

    2002-01-01

    Enhanced field emission (EFE) presents the main impediment to higher acceleration gradients in superconducting niobium (Nb) radio frequency cavities for particle accelerators. The strength, number and sources of EFE sites strongly depend on surface preparation and handling. The main objective of this thesis project is to systematically investigate the sources of EFE from Nb, to evaluate the best available surface preparation techniques with respect to resulting field emission, and to establish an optimized process to minimize or eliminate EFE. To achieve these goals, a scanning field emission microscope (SFEM) was designed and built as an extension to an existing commercial scanning electron microscope (SEM). In the SFEM chamber of ultra high vacuum, a sample is moved laterally in a raster pattern under a high voltage anode tip for EFE detection and localization. The sample is then transferred under vacuum to the SEM chamber equipped with an energy-dispersive x-ray spectrometer for individual emitting site characterization. Compared to other systems built for similar purposes, this apparatus has low cost and maintenance, high operational flexibility, considerably bigger scan area, as well as reliable performance. EFE sources from planar Nb have been studied after various surface preparation, including chemical etching and electropolishing, combined with ultrasonic or high-pressure water rinse. Emitters have been identified, analyzed and the preparation process has been examined and improved based on EFE results. As a result, field-emission-free or near field-emission-free surfaces at ∼140 MV/m have been consistently achieved with the above techniques. Characterization on the remaining emitters leads to the conclusion that no evidence of intrinsic emitters, i.e., no fundamental electric field limit induced by EFE, has been observed up to ∼140 MV/m. Chemically etched and electropolished Nb are compared and no significant difference is observed up to ∼140 MV

  7. Enhanced Field Emission Studies on Niobium Surfaces Relevant to High Field Superconducting Radio-Frequency Devices

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Tong [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)

    2002-09-18

    Enhanced field emission (EFE) presents the main impediment to higher acceleration gradients in superconducting niobium (Nb) radiofrequency cavities for particle accelerators. The strength, number and sources of EFE sites strongly depend on surface preparation and handling. The main objective of this thesis project is to systematically investigate the sources of EFE from Nb, to evaluate the best available surface preparation techniques with respect to resulting field emission, and to establish an optimized process to minimize or eliminate EFE. To achieve these goals, a scanning field emission microscope (SFEM) was designed and built as an extension to an existing commercial scanning electron microscope (SEM). In the SFEM chamber of ultra high vacuum, a sample is moved laterally in a raster pattern under a high voltage anode tip for EFE detection and localization. The sample is then transferred under vacuum to the SEM chamber equipped with an energy-dispersive x-ray spectrometer for individual emitting site characterization. Compared to other systems built for similar purposes, this apparatus has low cost and maintenance, high operational flexibility, considerably bigger scan area, as well as reliable performance. EFE sources from planar Nb have been studied after various surface preparation, including chemical etching and electropolishing, combined with ultrasonic or high-pressure water rinse. Emitters have been identified, analyzed and the preparation process has been examined and improved based on EFE results. As a result, field-emission-free or near field-emission-free surfaces at ~140 MV/m have been consistently achieved with the above techniques. Characterization on the remaining emitters leads to the conclusion that no evidence of intrinsic emitters, i.e., no fundamental electric field limit induced by EFE, has been observed up to ~140 MV/m. Chemically etched and electropolished Nb are compared and no significant difference is observed up to ~140 MV/m. To

  8. Lattice location of transition metals in silicon by means of emission channeling

    CERN Document Server

    da Silva, Daniel José; Wahl, Ulrich; Correia, João Guilherme

    The behavior of transition metals (TMs) in silicon is a subject that has been studied extensively during the last six decades. Their unintentional introduction during the Si production, crystal growth and device manufacturing have made them difficult contaminants to avoid. Once in silicon they easily form deep levels, either when in the isolated form or when forming precipitates. One important effect is the reduction of efficiency of silicon-based devices, being dramatic, in particular, in photovoltaic applications. One way to avoid such effects is by engineering the location of the TM: some TM complexes or lattice sites of the isolated form do not introduce any level in the silicon bandgap. Which point defects lead to such passivation is still under debate. Another way is to mitigate the reduction of efficiency by reducing the dangling bonds of TMs with hydrogen. The most important and commonly used procedures to diminish the unwanted effects of the introduced deep levels are, nevertheless, based on the so-c...

  9. Infrared induced visible emission from porous silicon: the mechanism of anodic oxidatio

    NARCIS (Netherlands)

    Kooij, Ernst S.; Rama, A.R.; Kelly, J.J.

    1997-01-01

    The visible luminescence caused by anodic oxidation of p-type porous silicon has been studied. It is shown that similar luminescence can be observed in n-type material by illumination with near-infrared light. Addition of a suitable reducing agent to the electrolyte solution can both suppress the

  10. Field collapse due to band-tail charge in amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qi; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States); Schiff, E.A. [Syracuse Univ., NY (United States)

    1996-05-01

    It is common for the fill factor to decrease with increasing illumination intensity in hydrogenated amorphous silicon solar cells. This is especially critical for thicker solar cells, because the decrease is more severe than in thinner cells. Usually, the fill factor under uniformly absorbed red light changes much more than under strongly absorbed blue light. The cause of this is usually assumed to arise from space charge trapped in deep defect states. The authors model this behavior of solar cells using the Analysis of Microelectronic and Photonic Structures (AMPS) simulation program. The simulation shows that the decrease in fill factor is caused by photogenerated space charge trapped in the band-tail states rather than in defects. This charge screens the applied field, reducing the internal field. Owing to its lower drift mobility, the space charge due to holes exceeds that due to electrons and is the main cause of the field screening. The space charge in midgap states is small compared with that in the tails and can be ignored under normal solar-cell operating conditions. Experimentally, the authors measured the photocapacitance as a means to probe the collapsed field. They also explored the light intensity dependence of photocapacitance and explain the decrease of FF with the increasing light intensity.

  11. Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications

    Science.gov (United States)

    Schwank, James R.; Shaneyfelt, Marty R.; Draper, Bruce L.; Dodd, Paul E.

    2001-01-01

    A silicon-on-insulator (SOI) field-effect transistor (FET) and a method for making the same are disclosed. The SOI FET is characterized by a source which extends only partially (e.g. about half-way) through the active layer wherein the transistor is formed. Additionally, a minimal-area body tie contact is provided with a short-circuit electrical connection to the source for reducing floating body effects. The body tie contact improves the electrical characteristics of the transistor and also provides an improved single-event-upset (SEU) radiation hardness of the device for terrestrial and space applications. The SOI FET also provides an improvement in total-dose radiation hardness as compared to conventional SOI transistors fabricated without a specially prepared hardened buried oxide layer. Complementary n-channel and p-channel SOI FETs can be fabricated according to the present invention to form integrated circuits (ICs) for commercial and military applications.

  12. Detection of DNA of genetically modified maize by a silicon nanowire field-effect transistor

    International Nuclear Information System (INIS)

    Pham, Van Binh; Tung Pham, Xuan Thanh; Duong Dang, Ngoc Thuy; Tuyen Le, Thi Thanh; Tran, Phu Duy; Nguyen, Thanh Chien; Nguyen, Van Quoc; Dang, Mau Chien; Tong, Duy Hien; Van Rijn, Cees J M

    2011-01-01

    A silicon nanowire field-effect transistor based sensor (SiNW-FET) has been proved to be the most sensitive and powerful device for bio-detection applications. In this paper, SiNWs were first fabricated by using our recently developed deposition and etching under angle technique (DEA), then used to build up the complete SiNW device based biosensor. The fabricated SiNW biosensor was used to detect DNA of genetically modified maize. As the DNA of the genetically modified maize has particular DNA sequences of 35S promoter, we therefore designed 21 mer DNA oligonucleotides, which are used as a receptor to capture the transferred DNA of maize. In our work, the SiNW biosensor could detect DNA of genetically modified maize with concentrations down to about 200 pM

  13. Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

    Science.gov (United States)

    Thomas, O; Yuan, Z L; Shields, A J

    2012-01-24

    Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

  14. Dynamic surface deformation of silicone elastomers for management of marine biofouling: laboratory and field studies using pneumatic actuation.

    Science.gov (United States)

    Shivapooja, Phanindhar; Wang, Qiming; Szott, Lizzy M; Orihuela, Beatriz; Rittschof, Daniel; Zhao, Xuanhe; López, Gabriel P

    2015-01-01

    Many strategies have been developed to improve the fouling release (FR) performance of silicone coatings. However, biofilms inevitably build on these surfaces over time. Previous studies have shown that intentional deformation of silicone elastomers can be employed to detach biofouling species. In this study, inspired by the methods used in soft-robotic systems, controlled deformation of silicone elastomers via pneumatic actuation was employed to detach adherent biofilms. Using programmed surface deformation, it was possible to release > 90% of biofilm from surfaces in both laboratory and field environments. A higher substratum strain was required to remove biofilms accumulated in the field environment as compared with laboratory-grown biofilms. Further, the study indicated that substratum modulus influences the strain needed to de-bond biofilms. Surface deformation-based approaches have potential for use in the management of biofouling in a number of technological areas, including in niche applications where pneumatic actuation of surface deformation is feasible.

  15. Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Static Magnetic Fields

    Science.gov (United States)

    Jauss, T.; SorgenFrei, T.; Croell, A.; Azizi, M.; Reimann, C.; Friedrich, J.; Volz, M. P.

    2014-01-01

    In the photovoltaics industry, the largest market share is represented by solar cells made from multicrystalline silicon, which is grown by directional solidification. During the growth process, the silicon melt is in contact with the silicon nitride coated crucible walls and the furnace atmosphere which contains carbon monoxide. The dissolution of the crucible coating, the carbon bearing gas, and the carbon already present in the feedstock, lead to the precipitation of silicon carbide, and silicon nitride, at later stages of the growth process. The precipitation of Si3N4 and SiC particles of up to several hundred micrometers in diameter leads to severe problems during the wire sawing process for wafering the ingots. Furthermore the growth of the silicon grains can be negatively influenced by the presence of particles, which act as nucleation sources and lead to a grit structure of small grains and are sources for dislocations. If doped with Nitrogen from the dissolved crucible coating, SiC is a semi conductive material, and can act as a shunt, short circuiting parts of the solar cell. For these reasons, the incorporation of such particles needs to be avoided. In this contribution we performed model experiments in which the transport of intentionally added SiC particles and their interaction with the solid-liquid interface during float zone growth of silicon in strong steady magnetic fields was investigated. SiC particles of 7µm and 60µm size are placed in single crystal silicon [100] and [111] rods of 8mm diameter. This is achieved by drilling a hole of 2mm diameter, filling in the particles and closing the hole by melting the surface of the rod until a film of silicon covers the hole. The samples are processed under a vacuum of 1x10(exp -5) mbar or better, to prevent gas inclusions. An oxide layer to suppress Marangoni convection is applied by wet oxidation. Experiments without and with static magnetic field are carried out to investigate the influence of melt

  16. Field investigation to assess nutrient emission from paddy field to surface water in river catchment

    Science.gov (United States)

    Kogure, Kanami; Aichi, Masaatsu; Zessner, Matthias

    2015-04-01

    In order to maintain good river environment, it is remarkably important to understand and to control nutrient behavior such as Nitrogen and Phosphorus. Our former research dealing with nutrient emission analysis in the Tone River basin area in Japan, in addition to urban and industrial waste water, nutrient emission from agricultural activity is dominant pollution source into the river system. Japanese style agriculture produces large amount of rice and paddy field occupies large areas in Japanese river basin areas. While paddy field can deteriorate river water quality by outflow of fertilizer, it is also suggested that paddy field has water purification function. As we carried out investigation in the Tone River Basin area, data were obtained which dissolved nitrogen concentration is lower in discharging water from paddy field than inflowing water into the field. Regarding to nutrient emission impact from paddy field, sufficient data are required to discuss quantitatively seasonal change of material behavior including flooding season and dry season, difference of climate condition, soil type, and rice species, to evaluate year round comprehensive impact from paddy field to the river system. In this research, field survey in paddy field and data collection relating rice production were carried out as a preliminary investigation to assess how Japanese style paddy field contributes year round on surface water quality. Study sites are three paddy fields located in upper reach of the Tone River basin area. The fields are flooded from June to September. In 2014, field investigations were carried out three times in flooding period and twice in dry period. To understand characteristics of each paddy field and seasonal tendency accompanying weather of agricultural event, short term investigations were conducted and we prepare for further long term investigation. Each study site has irrigation water inflow and outflow. Two sites have tile drainage system under the field and

  17. Silicon on ferroelectic insulator field effect transistor (SOF-FET) a new device for the next generation ultra low power circuits

    Science.gov (United States)

    Es-Sakhi, Azzedin D.

    Field effect transistors (FETs) are the foundation for all electronic circuits and processors. These devices have progressed massively to touch its final steps in sub-nanometer level. Left and right proposals are coming to rescue this progress. Emerging nano-electronic devices (resonant tunneling devices, single-atom transistors, spin devices, Heterojunction Transistors rapid flux quantum devices, carbon nanotubes, and nanowire devices) took a vast share of current scientific research. Non-Si electronic materials like III-V heterostructure, ferroelectric, carbon nanotubes (CNTs), and other nanowire based designs are in developing stage to become the core technology of non-classical CMOS structures. FinFET present the current feasible commercial nanotechnology. The scalability and low power dissipation of this device allowed for an extension of silicon based devices. High short channel effect (SCE) immunity presents its major advantage. Multi-gate structure comes to light to improve the gate electrostatic over the channel. The new structure shows a higher performance that made it the first candidate to substitute the conventional MOSFET. The device also shows a future scalability to continue Moor's Law. Furthermore, the device is compatible with silicon fabrication process. Moreover, the ultra-low-power (ULP) design required a subthreshold slope lower than the thermionic-emission limit of 60mV/ decade (KT/q). This value was unbreakable by the new structure (SOI-FinFET). On the other hand most of the previews proposals show the ability to go beyond this limit. However, those pre-mentioned schemes have publicized a very complicated physics, design difficulties, and process non-compatibility. The objective of this research is to discuss various emerging nano-devices proposed for ultra-low-power designs and their possibilities to replace the silicon devices as the core technology in the future integrated circuit. This thesis proposes a novel design that exploits the

  18. Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors

    International Nuclear Information System (INIS)

    Ganichev, S. D.; Ziemann, E.; Prettl, W.; Yassievich, I. N.; Istratov, A. A.; Weber, E. R.

    2000-01-01

    The enhancement of the emission rate of charge carriers from deep-level defects in electric field is routinely used to determine the charge state of the defects. However, only a limited number of defects can be satisfactorily described by the Poole-Frenkel theory. An electric field dependence different from that expected from the Poole-Frenkel theory has been repeatedly reported in the literature, and no unambiguous identification of the charge state of the defect could be made. In this article, the electric field dependencies of emission of carriers from DX centers in Al x Ga 1-x As:Te, Cu pairs in silicon, and Ge:Hg have been studied applying static and terahertz electric fields, and analyzed by using the models of Poole-Frenkel and phonon assisted tunneling. It is shown that phonon assisted tunneling and Poole-Frenkel emission are two competitive mechanisms of enhancement of emission of carriers, and their relative contribution is determined by the charge state of the defect and by the electric-field strength. At high-electric field strengths carrier emission is dominated by tunneling independently of the charge state of the impurity. For neutral impurities, where Poole-Frenkel lowering of the emission barrier does not occur, the phonon assisted tunneling model describes well the experimental data also in the low-field region. For charged impurities the transition from phonon assisted tunneling at high fields to Poole-Frenkel effect at low fields can be traced back. It is suggested that the Poole-Frenkel and tunneling models can be distinguished by plotting logarithm of the emission rate against the square root or against the square of the electric field, respectively. This analysis enables one to unambiguously determine the charge state of a deep-level defect. (c) 2000 The American Physical Society

  19. Velocity field measurement in micro-bubble emission boiling

    International Nuclear Information System (INIS)

    Ito, Daisuke; Saito, Yasushi; Natazuka, Jun

    2017-01-01

    Liquid inlet behavior to a heat surface in micro-bubble emission boiling (MEB) was investigated by flow measurement using particle image velocimetry (PIV). Subcooled pool boiling experiments under atmospheric pressure were carried out using a heat surface with a diameter of 10 mm. An upper end of a heater block made of copper was used as the heat surface. Working fluid was the deionized water and the subcooling was varied from 40 K to 70 K. Three K-type thermocouples were installed in the copper block to measure the temperature gradient, and the heat flux and wall superheat were estimated from these temperature data to make a boiling curve. The flow visualization around the heat surface was carried out using a high-speed video camera and a light sheet. The microbubbles generated in the MEB were used as tracer particles and the velocity field was obtained by PIV analysis of the acquired image sequence. As a result, the higher heat fluxes than the critical heat flux could be obtained in the MEB region. In addition, the distribution characteristics of the velocity in MEB region were studied using the PIV results and the location of the stagnation point in the velocity fields was discussed. (author)

  20. Density functional theory for field emission from carbon nano-structures

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zhibing, E-mail: stslzb@mail.sysu.edu.cn

    2015-12-15

    Electron field emission is understood as a quantum mechanical many-body problem in which an electronic quasi-particle of the emitter is converted into an electron in vacuum. Fundamental concepts of field emission, such as the field enhancement factor, work-function, edge barrier and emission current density, will be investigated, using carbon nanotubes and graphene as examples. A multi-scale algorithm basing on density functional theory is introduced. We will argue that such a first principle approach is necessary and appropriate for field emission of nano-structures, not only for a more accurate quantitative description, but, more importantly, for deeper insight into field emission. - Highlights: • Applications of DFT to electron field emission of nano-structures are reviewed. • Fundamental concepts of field emission are re-visited with emphasis on the many-body effects. • New insights to field emission of nano-structures are obtained by multi-scale DFT calculations. • It is shown that the exchange–correlation effect on the emission barrier is significant. • Spontaneous symmetry breaking in field emission of CNT has been predicted.

  1. As-pyrolyzed sugarcane bagasse possessing exotic field emission properties

    Science.gov (United States)

    Krishnia, Lucky; Yadav, Brajesh S.; Palnitkar, Umesh; Satyam, P. V.; Gupta, Bipin Kumar; Koratkar, Nikhil A.; Tyagi, Pawan K.

    2018-06-01

    The present study aims to demonstrate the application of sugarcane bagasse as an excellent field emitter. Field emission property of as-pyrolyzed sugarcane bagasse (p-SBg) before and after the plasma treatment has been investigated. It has been observed that electronic nature of p-SBg transformed from semiconducting to metallic after plasma treatment. Maximum current and turn-on field defined at 10 μA/cm2 was found to be 800 μA/cm2 and 2.2 V/μm for as-pyrolyzed sugarcane bagasse (p-SBg) and 25 μA/cm2 and 8.4 V/μm for H2-plasma treated p-SBg. These values are found to be better than the reported values for graphene and activated carbon. In this report, pyrolysis of bagasse has been carried in a thermal chemical vapor deposition (Th-CVD) system in inert argon atmosphere. Scanning electron microscopy (SEM), X-ray Diffraction (XRD), High-resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) have been used to study the structure of both pre and post plasma-treated p-SBg bagasse's sample. HRTEM study reveals that carbonaceous structures such as 3D-nanographene oxide (3D-NGO), graphite nanodots (GNDs), carbon nanotubes (CNTs), and carbon onions are present in both pre-treated and plasma-treated p-SBg. Hence, we envision that the performed study will be a forwarding step to facilitate the application of p-SBg in display devices.

  2. Emissivity-corrected power loss calibration for lock-in thermography measurements on silicon solar cells

    International Nuclear Information System (INIS)

    Kasemann, Martin; Walter, Benjamin; Meinhardt, Christoph; Ebser, Jan; Kwapil, Wolfram; Warta, Wilhelm

    2008-01-01

    This paper describes power loss calibration procedures with implemented emissivity correction. The determination of our emissivity correction matrix does neither rely on blackbody reference measurements nor on the knowledge of any sample temperatures. To describe the emissivity-corrected power calibration procedures in detail, we review the theory behind lock-in thermography and show experimentally that the lock-in signal is proportional to the power dissipation in the solar cell. Experiments show the successful application of our emissivity correction procedure, which significantly improves the informative value of lock-in thermography images and the reliability of the conclusions drawn from these images

  3. Consistent interpretation of neutron-induced charged-particle emission in silicon

    International Nuclear Information System (INIS)

    Hermsdorf, D.

    1982-06-01

    Users requesting gas production cross sections for Silicon will be confronted with serious discrepancies taking evaluated data as well as experimental ones. To clarify the accuracies achieved at present in experiments and evaluations in this paper an intercomparison of different evaluated nuclear data files has been carried out resulting in recommendations for improvements of these files. The analysis of the experimental data base also shows contradictory measurements or in most cases a lack of data. So an interpretation of reliable measured data in terms of nuclear reaction theories has been done using statistical and direct reaction mechanism models. This study results in a consistent and comprehensive evaluated data set for neutron-induced charged-particle production in Silicon which will be incorporated in file 2015 of the SOKRATOR library. (author)

  4. The origin of double peak electric field distribution in heavily irradiated silicon detectors

    CERN Document Server

    Eremin, V; Li, Z

    2002-01-01

    The first observation of double peak (DP) electric field distribution in heavily neutron irradiated (>10 sup 1 sup 4 n/cm sup 2) semiconductor detectors has been published about 6 yr ago. However, this effect was not quantitatively analyzed up to now. The explanation of the DP electric field distribution presented in this paper is based on the properties of radiation induced deep levels in silicon, which act as deep traps, and on the distribution of the thermally generated free carrier concentration in the detector bulk. In the frame of this model, the earlier published considerations on the so-called 'double junction (DJ) effect' are discussed as well. The comparison of the calculated electric field profiles at different temperatures with the experimental ones allows one to determine a set of deep levels. This set of deep levels, and their charge filling status are essential to the value and the distribution of space charge in the space charge region in the range of 305-240 K, which is actual temperature ran...

  5. Meshed doped silicon photonic crystals for manipulating near-field thermal radiation

    Science.gov (United States)

    Elzouka, Mahmoud; Ndao, Sidy

    2018-01-01

    The ability to control and manipulate heat flow is of great interest to thermal management and thermal logic and memory devices. Particularly, near-field thermal radiation presents a unique opportunity to enhance heat transfer while being able to tailor its characteristics (e.g., spectral selectivity). However, achieving nanometric gaps, necessary for near-field, has been and remains a formidable challenge. Here, we demonstrate significant enhancement of the near-field heat transfer through meshed photonic crystals with separation gaps above 0.5 μm. Using a first-principle method, we investigate the meshed photonic structures numerically via finite-difference time-domain technique (FDTD) along with the Langevin approach. Results for doped-silicon meshed structures show significant enhancement in heat transfer; 26 times over the non-meshed corrugated structures. This is especially important for thermal management and thermal rectification applications. The results also support the premise that thermal radiation at micro scale is a bulk (rather than a surface) phenomenon; the increase in heat transfer between two meshed-corrugated surfaces compared to the flat surface (8.2) wasn't proportional to the increase in the surface area due to the corrugations (9). Results were further validated through good agreements between the resonant modes predicted from the dispersion relation (calculated using a finite-element method), and transmission factors (calculated from FDTD).

  6. Characterization of the Electronic Structure of Silicon Nanoparticles Using X-ray Absorption and Emission

    Energy Technology Data Exchange (ETDEWEB)

    Vaverka, April Susan Montoya [Univ.of California, Davis, CA (United States)

    2008-01-01

    Resolving open questions regarding transport in nanostructures can have a huge impact on a broad range of future technologies such as light harvesting for energy. Silicon has potential to be used in many of these applications. Understanding how the band edges of nanostructures move as a function of size, surface termination and assembly is of fundamental importance in understanding the transport properties of these materials. In this thesis work I have investigated the change in the electronic structure of silicon nanoparticle assemblies as the surface termination is changed. Nanoparticles are synthesized using a thermal evaporation technique and sizes are determined using atomic force microscopy (AFM). By passivating the particles with molecules containing alcohol groups we are able to modify the size dependent band edge shifts. Both the valence and conduction bands are measured using synchrotron based x-ray absorption spectroscopy (XAS) and soft x-ray fluorescence (SXF) techniques. Particles synthesized via recrystallization of amorphous silicon/SiO2 multilayers of thicknesses below 10 nm are also investigated using the synchrotron techniques. These samples also show quantum confinement effects but the electronic structure is different from those synthesized via evaporation methods. The total bandgap is determined for all samples measured. The origins of these differences in the electronic structures are discussed.

  7. Silicon nanowire field-effect transistors for the detection of proteins

    Science.gov (United States)

    Madler, Carsten

    In this dissertation I present results on our efforts to increase the sensitivity and selectivity of silicon nanowire ion-sensitive field-effect transistors for the detection of biomarkers, as well as a novel method for wireless power transfer based on metamaterial rectennas for their potential use as implantable sensors. The sensing scheme is based on changes in the conductance of the semiconducting nanowires upon binding of charged entities to the surface, which induces a field-effect. Monitoring the differential conductance thus provides information of the selective binding of biological molecules of interest to previously covalently linked counterparts on the nanowire surface. In order to improve on the performance of the nanowire sensing, we devised and fabricated a nanowire Wheatstone bridge, which allows canceling out of signal drift due to thermal fluctuations and dynamics of fluid flow. We showed that balancing the bridge significantly improves the signal-to-noise ratio. Further, we demonstrated the sensing of novel melanoma biomarker TROY at clinically relevant concentrations and distinguished it from nonspecific binding by comparing the reaction kinetics. For increased sensitivity, an amplification method was employed using an enzyme which catalyzes a signal-generating reaction by changing the redox potential of a redox pair. In addition, we investigated the electric double layer, which forms around charges in an electrolytic solution. It causes electrostatic screening of the proteins of interest, which puts a fundamental limitation on the biomarker detection in solutions with high salt concentrations, such as blood. We solved the coupled Nernst-Planck and Poisson equations for the electrolyte under influence of an oscillating electric field and discovered oscillations of the counterion concentration at a characteristic frequency. In addition to exploring different methods for improved sensing capabilities, we studied an innovative method to supply power

  8. THE EFFECT OF MAGNETIC FIELD ON THE EFFICIENCY OF A SILICON SOLAR CELL UNDER AN INTENSE LIGHT CONCENTRATION

    Directory of Open Access Journals (Sweden)

    Zoungrana Martial

    2017-06-01

    Full Text Available This work put in evidence, magnetic field effect the electrical parameters of a silicon solar cell illuminated by an intense light concentration: external load electric power, conversion efficiency, fill factor, external optimal charge load. Due to the high photogeneration of carrier in intense light illumination mode, in addition of magnetic field, we took into account the carrier gradient electric field in the base of the solar cell. Taking into account this electric field and the applied magnetic field in our model led to new analytical expressions of the continuity equation, the photocurrent and the photovoltage.

  9. Field emission from optimized structure of carbon nanotube field emitter array

    International Nuclear Information System (INIS)

    Chouhan, V.; Noguchi, T.; Kato, S.

    2016-01-01

    The authors report a detail study on the emission properties of field emitter array (FEA) of micro-circular emitters of multiwall carbon nanotubes (CNTs). The FEAs were fabricated on patterned substrates prepared with an array of circular titanium (Ti) islands on titanium nitride coated tantalum substrates. CNTs were rooted into these Ti islands to prepare an array of circular emitters. The circular emitters were prepared in different diameters and pitches in order to optimize their structure for acquiring a high emission current. The pitch was varied from 0 to 600 μm, while a diameter of circular emitters was kept constant to be 50 μm in order to optimize a pitch. For diameter optimization, a diameter was changed from 50 to 200 μm while keeping a constant edge-to-edge distance of 150 μm between the circular emitters. The FEA with a diameter of 50 μm and a pitch of 120 μm was found to be the best to achieve an emission current of 47 mA corresponding to an effective current density of 30.5 A/cm"2 at 7 V/μm. The excellent emission current was attributed to good quality of CNT rooting into the substrate and optimized FEA structure, which provided a high electric field on a whole circular emitter of 50 μm and the best combination of the strong edge effect and CNT coverage. The experimental results were confirmed with computer simulation.

  10. Field emission from optimized structure of carbon nanotube field emitter array

    Energy Technology Data Exchange (ETDEWEB)

    Chouhan, V., E-mail: vchouhan@post.kek.jp, E-mail: vijaychouhan84@gmail.com [School of High Energy Accelerator, The Graduate University for Advanced Studies, Tsukuba 305-0801 (Japan); Noguchi, T. [High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801 (Japan); Kato, S. [School of High Energy Accelerator, The Graduate University for Advanced Studies, Tsukuba 305-0801 (Japan); High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801 (Japan)

    2016-04-07

    The authors report a detail study on the emission properties of field emitter array (FEA) of micro-circular emitters of multiwall carbon nanotubes (CNTs). The FEAs were fabricated on patterned substrates prepared with an array of circular titanium (Ti) islands on titanium nitride coated tantalum substrates. CNTs were rooted into these Ti islands to prepare an array of circular emitters. The circular emitters were prepared in different diameters and pitches in order to optimize their structure for acquiring a high emission current. The pitch was varied from 0 to 600 μm, while a diameter of circular emitters was kept constant to be 50 μm in order to optimize a pitch. For diameter optimization, a diameter was changed from 50 to 200 μm while keeping a constant edge-to-edge distance of 150 μm between the circular emitters. The FEA with a diameter of 50 μm and a pitch of 120 μm was found to be the best to achieve an emission current of 47 mA corresponding to an effective current density of 30.5 A/cm{sup 2} at 7 V/μm. The excellent emission current was attributed to good quality of CNT rooting into the substrate and optimized FEA structure, which provided a high electric field on a whole circular emitter of 50 μm and the best combination of the strong edge effect and CNT coverage. The experimental results were confirmed with computer simulation.

  11. Experimental Development of Low-emittance Field-emission Electron Sources

    Energy Technology Data Exchange (ETDEWEB)

    Lueangaranwong, A. [Northern Illinois Univ., DeKalb, IL (United States). Northern Illinois Center for Accelerator & Detector Development; Buzzard, C. [Northern Illinois Univ., DeKalb, IL (United States); Divan, R. [Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Korampally, V. [Northern Illinois Univ., DeKalb, IL (United States); Piot, P. [Northern Illinois Univ., DeKalb, IL (United States). Northern Illinois Center for Accelerator & Detector Development; Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)

    2016-10-10

    Field emission electron sources are capable of extreme brightness when excited by static or time-dependent electro- magnetic fields. We are currently developing a cathode test stand operating in DC mode with possibility to trigger the emission using ultra-short (~ 100-fs) laser pulses. This contribution describes the status of an experiment to investigate field-emission using cathodes under development at NIU in collaboration with the Argonne’s Center for Nanoscale Materials.

  12. Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications

    Science.gov (United States)

    Radauscher, Erich Justin

    Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications. The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications. Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing

  13. Optics and design of the fringe field monochromator for a Schottky field emission gun

    International Nuclear Information System (INIS)

    Mook, H.W.; Kruit, P.

    1999-01-01

    For the improvement of high-resolution electron energy loss spectroscopy a new electron source monochromator, based on the Wien filter principle, is presented. In the fringe field monochromator the electric and magnetic filter fields are tightly enclosed by field clamps to satisfy the Wien condition, E=vB. The whole monochromator including the 150 nm energy selection slits (Nanoslits) is positioned in the gun area. Its total length is only 42 mm. Using electron trajectory simulation through the filter fields the dispersion and aberrations are determined. The parasitic astigmatism of the gun lens needs to be corrected using an electrostatic quadrupole field incorporated in the filter. Estimations of the influence of filter electrode misalignment show that at least six filter electrodes must be used to loosen the alignment demands sufficiently. Using theoretical estimations of the Coulomb interaction the final energy resolution, beam brightness and current are predicted. For a Schottky field emission electron gun with typical brightness of 10 8 A/sr m 2 V the monochromator is expected to produce a 50 meV 1 nA beam with a brightness of 10 7

  14. Silicon does not mitigate cell death in cultured tobacco BY-2 cells subjected to salinity without ethylene emission.

    Science.gov (United States)

    Liang, Xiaolei; Wang, Huahua; Hu, Yanfeng; Mao, Lina; Sun, Lili; Dong, Tian; Nan, Wenbin; Bi, Yurong

    2015-02-01

    Silicon induces cell death when ethylene is suppressed in cultured tobacco BY-2 cells. There is a crosstalk between Si and ethylene signaling. Silicon (Si) is beneficial for plant growth. It alleviates both biotic and abiotic stresses in plants. How Si works in plants is still mysterious. This study investigates the mechanism of Si-induced cell death in tobacco BY-2 cell cultures when ethylene is suppressed. Results showed that K2SiO3 alleviated the damage of NaCl stress. Si treatment rapidly increased ethylene emission and the expression of ethylene biosynthesis genes. Treatments with Si + Ag and Si + aminooxyacetic acid (AOA, ethylene biosynthesis inhibitor) reduced the cell growth and increased cell damage. The treatment with Si + Ag induced hydrogen peroxide (H2O2) generation and ultimately cell death. Some nucleus of BY-2 cells treated with Si + Ag appeared TUNEL positive. The inhibition of H2O2 and nitric oxide (NO) production reduced the cell death rate induced by Si + Ag treatment. Si eliminated the up-regulation of alternative pathway by Ag. These data suggest that ethylene plays an important role in Si function in plants. Without ethylene, Si not only failed to enhance plant resistance, but also elevated H2O2 generation and further induced cell death in tobacco BY-2 cells.

  15. Re-defining failure envelopes for silicon carbide composites based on damage process analysis by acoustic emission

    International Nuclear Information System (INIS)

    Nozawa, Takashi; Ozawa, Kazumi; Tanigawa, Hiroyasu

    2013-01-01

    A silicon carbide fiber reinforced silicon carbide matrix (SiC/SiC) composite is a promising candidate for a fusion DEMO blanket. To develop design codes in practical use of them, strength anisotropy is an important issue to be clarified and therefore this study aimed to evaluate the failure behavior of the SiC/SiC composites to provide a strength map. For this purpose, detailed tensile, compressive and in-plane shear failure behaviors were evaluated by the acoustic emission (AE) technique for a plain–weave (P/W) chemically vapor-infiltration (CVI) SiC/SiC composite. The AE results distinguished damage accumulation processes by separately discussing localized variations of power within a time series by wavelet analysis. Of particular emphasis is that matrix cracking occurred prior to the proportional limit stress (PLS) by both tensile and compressive tests. This is because the rough-surface of SiC fibers resulted in the strong frictional stress at the fiber/matrix (F/M) interface, showing linearity in the stress–strain curve beyond the actual matrix cracking stress (i.e., possibly no sliding of the fibers at the F/M interface). In this paper, an updated failure envelope was provided by referring the true matrix cracking stresses as more realistic and reasonable failure criteria

  16. Re-defining failure envelopes for silicon carbide composites based on damage process analysis by acoustic emission

    Energy Technology Data Exchange (ETDEWEB)

    Nozawa, Takashi, E-mail: nozawa.takashi67@jaea.go.jp; Ozawa, Kazumi; Tanigawa, Hiroyasu

    2013-10-15

    A silicon carbide fiber reinforced silicon carbide matrix (SiC/SiC) composite is a promising candidate for a fusion DEMO blanket. To develop design codes in practical use of them, strength anisotropy is an important issue to be clarified and therefore this study aimed to evaluate the failure behavior of the SiC/SiC composites to provide a strength map. For this purpose, detailed tensile, compressive and in-plane shear failure behaviors were evaluated by the acoustic emission (AE) technique for a plain–weave (P/W) chemically vapor-infiltration (CVI) SiC/SiC composite. The AE results distinguished damage accumulation processes by separately discussing localized variations of power within a time series by wavelet analysis. Of particular emphasis is that matrix cracking occurred prior to the proportional limit stress (PLS) by both tensile and compressive tests. This is because the rough-surface of SiC fibers resulted in the strong frictional stress at the fiber/matrix (F/M) interface, showing linearity in the stress–strain curve beyond the actual matrix cracking stress (i.e., possibly no sliding of the fibers at the F/M interface). In this paper, an updated failure envelope was provided by referring the true matrix cracking stresses as more realistic and reasonable failure criteria.

  17. Comparison of secondary ion emission induced in silicon oxide by MeV and KeV ion bombardment

    International Nuclear Information System (INIS)

    Allali, H.; Nsouli, B.; Thomas, J.P.; Szymczak, W.; Wittmaack, K.

    1993-09-01

    The surface and near-surface composition of SiO 2 layers, has been investigated by negative secondary ion emission mass spectrometry (SIMS) using MeV and KeV ion bombardment in combination with time-of-flight (TOF) mass analysis. The spectra recorded in the mass range 0-100 u are dominated by surface impurities, notably hydrocarbons and silicon polyanions incorporating H and OH entities. The characteristic (fragmentation) patterns are quite different for light and high-velocity ion impact. In high-velocity TOF-SIMS analysis of P-doped layers, prepared by chemical vapour deposition (CVD), the mass lines at 63 and 79 u are very prominent and appear to correlate with the phosphorus concentration (PO 2 and PO 3 , respectively). It is shown, however, that for unambiguous P analysis one has to use dynamic SIMS or high mass resolution. (author) 11 refs., 5 figs

  18. Silicon Carbide Defect Qubits/Quantum Memory with Field-Tuning: OSD Quantum Science and Engineering Program (QSEP)

    Science.gov (United States)

    2017-08-01

    TECHNICAL REPORT 3073 August 2017 Silicon Carbide Defect Qubits/Quantum Memory with Field-tuning: OSD Quantum Science and Engineering Program...Quantum Science and Engineering Program) by the Advanced Concepts and Applied Research Branch (Code 71730), the Energy and Environmental Sustainability...the Secretary of Defense (OSD) Quantum Science and Engineering Program (QSEP). Their collaboration topic was to examine the effect of electric-field

  19. Field Emission Scanning Electron Microscope (FESEM) Facility in BTI

    International Nuclear Information System (INIS)

    Cik Rohaida Che Hak; Foo, C.T.; Nor Azillah Fatimah Othman

    2015-01-01

    Field Emission Scanning Electron Microscope (FE-SEM) provides ultra-high resolution imaging at low accelerating voltages and small working distances. The GeminisSEM 500, a new FESEM imaging facility will be installed soon in MTEC, BTI. It provides resolution of the images is as low as 0.6 nm at 15 kV and 1.2 nm at 1 kV, allowing examination of the top surface of nano powders, nano film and nano fiber in the wide range of applications such as mineralogy, ceramics, polymer, metallurgy, electronic devices, chemistry, physics and life sciences. This system is equipped with several detectors to detect various signals such as secondary electrons (SE) detector for topographic information and back-scattered electrons (BSE) detector for materials composition contrast. Energy dispersive x-ray spectroscopy (EDS) with detector energy resolution of < 129 eV and detection limit in the range of 1000-3000 ppm coupled with FE-SEM is used to determine the chemical composition of micro-features including boron (B) to uranium (U). Wavelength dispersive x-ray spectroscopy (WDS) which has detector resolution of 2-20 eV and detection limit of 30-300 ppm coupled with FE-SEM is used to detect elements that cannot be resolved with EDS. The ultra-high resolution imaging combined with the high sensitivity WDS helps to resolve the thorium and rare earth elemental analysis. (author)

  20. Plasma-induced field emission study of carbon nanotube cathode

    Directory of Open Access Journals (Sweden)

    Yi Shen

    2011-10-01

    Full Text Available An investigation on the plasma-induced field emission (PFE properties of a large area carbon nanotube (CNT cathode on a 2 MeV linear induction accelerator injector is presented. Experimental results show that the cathode is able to emit intense electron beams. Intense electron beams of 14.9–127.8  A/cm^{2} are obtained from the cathode. The CNT cathode desorbs gases from the CNTs during the PFE process. The fast cathode plasma expansion affects the diode perveance. The amount of outgassing is estimated to be 0.06–0.49  Pa·L, and the ratio of outgassing and electron are roughly calculated to be within the range of 170–350 atoms per electron. The effect of the outgassing is analyzed, and the outgassing mass spectrum of the CNT cathode has been studied during the PFE. There is a significant desorption of CO_{2}, N_{2}(CO, and H_{2} gases, which plays an important role during the PFE process. All the experiments demonstrate that the outgassing plays an important role in the formation of the cathode plasma. Moreover, the characteristic turn-on time of the CNT cathode was measured to be 39 ns.

  1. The enhanced efficiency of graphene-silicon solar cells by electric field doping.

    Science.gov (United States)

    Yu, Xuegong; Yang, Lifei; Lv, Qingmin; Xu, Mingsheng; Chen, Hongzheng; Yang, Deren

    2015-04-28

    The graphene-silicon (Gr-Si) Schottky junction solar cell has been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the low Gr-Si Schottky barrier height largely limits the power conversion efficiency of Gr-Si solar cells. Here, we demonstrate that electric field doping can be used to tune the work function of a Gr film and therefore improve the photovoltaic performance of the Gr-Si solar cell effectively. The electric field doping effects can be achieved either by connecting the Gr-Si solar cell to an external power supply or by polarizing a ferroelectric polymer layer integrated in the Gr-Si solar cell. Exploration of both of the device architecture designs showed that the power conversion efficiency of Gr-Si solar cells is more than twice of the control Gr-Si solar cells. Our study opens a new avenue for improving the performance of Gr-Si solar cells.

  2. The ALFAM2 database on ammonia emission from field-applied manure

    NARCIS (Netherlands)

    Hafner, Sasha D.; Pacholski, Andreas; Bittman, Shabtai; Burchill, William; Bussink, Wim; Chantigny, Martin; Carozzi, Marco; Génermont, Sophie; Häni, Christoph; Hansen, Martin N.; Huijsmans, Jan; Hunt, Derek; Kupper, Thomas; Lanigan, Gary; Loubet, Benjamin; Misselbrook, Tom; Meisinger, John J.; Neftel, Albrecht; Nyord, Tavs; Pedersen, Simon V.; Sintermann, Jörg; Thompson, Rodney B.; Vermeulen, Bert; Voylokov, Polina; Williams, John R.; Sommer, Sven G.

    2018-01-01

    Ammonia (NH3) emission from animal manure contributes to air pollution and ecosystem degradation, and the loss of reactive nitrogen (N) from agricultural systems. Estimates of NH3 emission are necessary for national inventories and nutrient management, and NH3 emission from field-applied manure has

  3. Earthworms can increase nitrous oxide emissions from managed grassland: a field study

    NARCIS (Netherlands)

    Lubbers, I.M.; López González, E.; Hummelink, E.W.J.; Groenigen, van J.W.

    2013-01-01

    Earthworms are important in determining the greenhouse gas (GHG) balance of soils. In laboratory studies they have been shown to increase emissions of the potent GHG nitrous oxide (N2O). Here we test whether these earthworm-induced N2O emissions also occur in the field. We quantified N2O emissions

  4. Electron field emission characteristics of graphene/carbon nanotubes hybrid field emitter

    International Nuclear Information System (INIS)

    Chen, Leifeng; He, Hong; Yu, Hua; Cao, Yiqi; Lei, Da; Menggen, QiQiGe; Wu, Chaoxing; Hu, Liqin

    2014-01-01

    The graphene (GP) and multi-walled carbon nanotubes (MCNTs) hybrid nanostructure emitter was constructed by a larger scale electrophoretic deposition (EPD) method. The field emission (FE) performance of the hybrid emitter is greatly improved compared with that of only GP or MCNTs emitter. The low turn-on electric field (EF), the low threshold EF and the reliability FE properties are obtained from the hybrid emitter. The better FE properties result from the improved electrical properties. For further enhancement FE of hybrids, Ag Nanoparticles (NPs) were decorated on the hybrids and FE characteristics were also studied. These studies indicate that we can use the hybrid nanostructure to improve conductivity and contact resistance, which results in enhancement of the FE properties

  5. Penetration length-dependent hot electrons in the field emission from ZnO nanowires

    Science.gov (United States)

    Chen, Yicong; Song, Xiaomeng; Li, Zhibing; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2018-01-01

    In the framework of field emission, whether or not hot electrons can form in the semiconductor emitters under a surface penetration field is of great concern, which will provide not only a comprehensive physical picture of field emission from semiconductor but also guidance on how to improve device performance. However, apart from some theoretical work, its experimental evidence has not been reported yet. In this article, the field penetration length-dependent hot electrons were observed in the field emission of ZnO nanowires through the in-situ study of its electrical and field emission characteristic before and after NH3 plasma treatment in an ultrahigh vacuum system. After the treatment, most of the nanowires have an increased carrier density but reduced field emission current. The raised carrier density was caused by the increased content of oxygen vacancies, while the degraded field emission current was attributed to the lower kinetic energy of hot electrons caused by the shorter penetration length. All of these results suggest that the field emission properties of ZnO nanowires can be optimized by modifying their carrier density to balance both the kinetic energy of field induced hot electrons and the limitation of saturated current under a given field.

  6. On the efficiency of photon emission during electrical breakdown in silicon

    International Nuclear Information System (INIS)

    Nepomuk Otte, A.

    2009-01-01

    This paper presents a study of photons that are emitted during electrical breakdown in p-n silicon diodes. The method that was developed for this study uses the optical-crosstalk effect that is observed in Geigermode-APD (G-APD) photon detectors. The outcome of this study is twofold: firstly, mainly photons with energies between 1.15 and 1.4 eV contribute to the optical crosstalk in G-APDs used in this study. This observation is explained by the strong energy dependence of the absorption length of photons in silicon. Secondly, the intensity with which photons with energies between 1.15 and 1.4 eV are emitted during a breakdown is 3x10 -5 photons per charge carrier in the breakdown region. The uncertainty of the intensity is estimated to be a factor of two. For this study a simulation package Siliconphotomultiplier Simulator (SiSi) was developed, which can be used to address various other questions that arise in the application of G-APDs.

  7. New perspectives in vacuum high voltage insulation. I. The transition to field emission

    CERN Document Server

    Diamond, W T

    1998-01-01

    Vacuum high-voltage insulation has been investigated for many years. Typically, electrical breakdown occurs between two broad-area electrodes at electric fields 100-1000 times lower than the breakdown field (about 5000 MV/m) between a well-prepared point cathode and a broad-area anode. Explanations of the large differences remain unsatisfactory, usually evoking field emission from small projections on the cathode that are subject to higher peak fields. The field emission then produces secondary effects that lead to breakdown. This article provides a significant resolution to this long standing problem. Field emission is not present at all fields, but typically starts after some process occurs at the cathode surface. Three effects have been identified that produce the transition to field emission: work function changes; mechanical changes produced by the strong electrical forces on the electrode surfaces; and gas desorption from the anode with sufficient density to support an avalanche discharge. Material adso...

  8. Design and modelling of a silicon optical MEMS switch controlled by magnetic field generated by a plain coil

    International Nuclear Information System (INIS)

    Golebiowski, J; Milcarz, Sz

    2014-01-01

    Optical switches can be made as a silicon cantilever with a magnetic layer. Such a structure is placed in a magnetic field of a planar coil. There is a torque deflecting the silicon beam with NiFe layer depending on a flux density of the magnetic field. The study shows an analysis of ferromagnetic layer parameters, beam's dimensions on optical switch characteristics. Different constructions of the beams were simulated for a range of values of magnetic field strength from 100 to 1000 A/m. An influence of the actuators parameters on characteristics was analysed. The loss of stiffness of the beam caused by specific constructions effected in displacements reaching 85 nm. Comsol Multiphysics 4.3b was used for the simulations.

  9. Field Measurements of PCB emissions from Building Surfaces Using a New Portable Emission Test Cell

    DEFF Research Database (Denmark)

    Lyng, Nadja; Haven, Rune; Gunnarsen, Lars Bo

    2016-01-01

    The purpose of the study was to measure PCB-emission rates from indoor surfaces on-site in contaminated buildings using a newly developed portable emission test cell. Emission rates were measured from six different surfaces; three untreated surfaces and three remediated surfaces in a contaminated...

  10. Silicon Carbide Junction Field Effect Transistor Digital Logic Gates Demonstrated at 600 deg. C

    Science.gov (United States)

    Neudeck, Philip G.

    1998-01-01

    The High Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. The HTIES team recently fabricated and demonstrated the first semiconductor digital logic gates ever to function at 600 C.

  11. Electron transfer in silicon-bridged adjacent chromophores: the source for blue-green emission.

    Science.gov (United States)

    Bayda, Malgorzata; Angulo, Gonzalo; Hug, Gordon L; Ludwiczak, Monika; Karolczak, Jerzy; Koput, Jacek; Dobkowski, Jacek; Marciniak, Bronislaw

    2017-05-10

    Si-Bridged chromophores have been proposed as sources for blue-green emission in several technological applications. The origin of this dual emission is to be found in an internal charge transfer reaction. The current work is an attempt to describe the details of these processes in these kinds of substances, and to design a molecular architecture to improve their performance. Nuclear motions essential for intramolecular charge transfer (ICT) can involve processes from twisted internal moieties to dielectric relaxation of the solvent. To address these issues, we studied ICT between adjacent chromophores in a molecular compound containing N-isopropylcarbazole (CBL) and 1,4-divinylbenzene (DVB) linked by a dimethylsilylene bridge. In nonpolar solvents emission arises from the local excited state (LE) of carbazole whereas in solvents of higher polarity dual emission was detected (LE + ICT). The CT character of the additional emission band was concluded from the linear dependence of the fluorescence maxima on solvent polarity. Electron transfer from CBL to DVB resulted in a large excited-state dipole moment (37.3 D) as determined from a solvatochromic plot and DFT calculations. Steady-state and picosecond time-resolved fluorescence experiments in butyronitrile (293-173 K) showed that the ICT excited state arises from the LE state of carbazole. These results were analyzed and found to be in accordance with an adiabatic version of Marcus theory including solvent relaxation.

  12. Field emission electric propulsion thruster modeling and simulation

    Science.gov (United States)

    Vanderwyst, Anton Sivaram

    Electric propulsion allows space rockets a much greater range of capabilities with mass efficiencies that are 1.3 to 30 times greater than chemical propulsion. Field emission electric propulsion (FEEP) thrusters provide a specific design that possesses extremely high efficiency and small impulse bits. Depending on mass flow rate, these thrusters can emit both ions and droplets. To date, fundamental experimental work has been limited in FEEP. In particular, detailed individual droplet mechanics have yet to be understood. In this thesis, theoretical and computational investigations are conducted to examine the physical characteristics associated with droplet dynamics relevant to FEEP applications. Both asymptotic analysis and numerical simulations, based on a new approach combining level set and boundary element methods, were used to simulate 2D-planar and 2D-axisymmetric probability density functions of the droplets produced for a given geometry and electrode potential. The combined algorithm allows the simulation of electrostatically-driven liquids up to and after detachment. Second order accuracy in space is achieved using a volume of fluid correction. The simulations indicate that in general, (i) lowering surface tension, viscosity, and potential, or (ii) enlarging electrode rings, and needle tips reduce operational mass efficiency. Among these factors, surface tension and electrostatic potential have the largest impact. A probability density function for the mass to charge ratio (MTCR) of detached droplets is computed, with a peak around 4,000 atoms per electron. High impedance surfaces, strong electric fields, and large liquid surface tension result in a lower MTCR ratio, which governs FEEP droplet evolution via the charge on detached droplets and their corresponding acceleration. Due to the slow mass flow along a FEEP needle, viscosity is of less importance in altering the droplet velocities. The width of the needle, the composition of the propellant, the

  13. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  14. The impact of capacitor bank inrush current on field emission current in vacuum

    NARCIS (Netherlands)

    Koochack-Zadeh, M.; Hinrichsen, V.; Smeets, R.P.P.; Lawall, A.

    2010-01-01

    Field emission current measurements during the recovery voltage are investigated to understand the origin of restrikes in vacuum interrupters in case of the interruption of capacitive loads. Measurement and analysis of very small field emission currents (0.01 - 1 mA) from the current zero crossing

  15. Comparison between laser terahertz emission microscope and conventional methods for analysis of polycrystalline silicon solar cell

    Directory of Open Access Journals (Sweden)

    Hidetoshi Nakanishi

    2015-11-01

    Full Text Available A laser terahertz emission microscope (LTEM can be used for noncontact inspection to detect the waveforms of photoinduced terahertz emissions from material devices. In this study, we experimentally compared the performance of LTEM with conventional analysis methods, e.g., electroluminescence (EL, photoluminescence (PL, and laser beam induced current (LBIC, as an inspection method for solar cells. The results showed that LTEM was more sensitive to the characteristics of the depletion layer of the polycrystalline solar cell compared with EL, PL, and LBIC and that it could be used as a complementary tool to the conventional analysis methods for a solar cell.

  16. Analysis of the Extremely Low Frequency Magnetic Field Emission from Laptop Computers

    Directory of Open Access Journals (Sweden)

    Brodić Darko

    2016-03-01

    Full Text Available This study addresses the problem of magnetic field emission produced by the laptop computers. Although, the magnetic field is spread over the entire frequency spectrum, the most dangerous part of it to the laptop users is the frequency range from 50 to 500 Hz, commonly called the extremely low frequency magnetic field. In this frequency region the magnetic field is characterized by high peak values. To examine the influence of laptop’s magnetic field emission in the office, a specific experiment is proposed. It includes the measurement of the magnetic field at six laptop’s positions, which are in close contact to its user. The results obtained from ten different laptop computers show the extremely high emission at some positions, which are dependent on the power dissipation or bad ergonomics. Eventually, the experiment extracts these dangerous positions of magnetic field emission and suggests possible solutions.

  17. Interference effects on guided Cherenkov emission in silicon from perpendicular, oblique, and parallel boundaries

    Science.gov (United States)

    Couillard, M.; Yurtsever, A.; Muller, D. A.

    2010-05-01

    Waveguide electromagnetic modes excited by swift electrons traversing Si slabs at normal and oblique incidence are analyzed using monochromated electron energy-loss spectroscopy and interpreted using a local dielectric theory that includes relativistic effects. At normal incidence, sharp spectral features in the visible/near-infrared optical domain are directly assigned to p -polarized modes. When the specimen is tilted, s -polarized modes, which are completely absent at normal incidence, become visible in the loss spectra. In the tilted configuration, the dispersion of p -polarized modes is also modified. For tilt angles higher than ˜50° , Cherenkov radiation, the phenomenon responsible for the excitation of waveguide modes, is expected to partially escape the silicon slab and the influence of this effect on experimental measurements is discussed. Finally, we find evidence for an interference effect at parallel Si/SiO2 interfaces, as well as a delocalized excitation of guided Cherenkov modes.

  18. Interference effects on guided Cherenkov emission in silicon from perpendicular, oblique, and parallel boundaries

    International Nuclear Information System (INIS)

    Couillard, M.; Yurtsever, A.; Muller, D. A.

    2010-01-01

    Waveguide electromagnetic modes excited by swift electrons traversing Si slabs at normal and oblique incidence are analyzed using monochromated electron energy-loss spectroscopy and interpreted using a local dielectric theory that includes relativistic effects. At normal incidence, sharp spectral features in the visible/near-infrared optical domain are directly assigned to p-polarized modes. When the specimen is tilted, s-polarized modes, which are completely absent at normal incidence, become visible in the loss spectra. In the tilted configuration, the dispersion of p-polarized modes is also modified. For tilt angles higher than ∼50 deg. Cherenkov radiation, the phenomenon responsible for the excitation of waveguide modes, is expected to partially escape the silicon slab and the influence of this effect on experimental measurements is discussed. Finally, we find evidence for an interference effect at parallel Si/SiO 2 interfaces, as well as a delocalized excitation of guided Cherenkov modes.

  19. Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

    KAUST Repository

    Li, Jingqi; Yue, Weisheng; Guo, Zaibing; Yang, Yang; Wang, Xianbin; Syed, Ahad A.; Zhang, Yafei

    2014-01-01

    A vertical carbon nanotube field-effect transistor (CNTFET) based on silicon (Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube (SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage (Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.

  20. Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

    Science.gov (United States)

    Song, In-Hyouk; Forfang, William B. D.; Cole, Bryan; You, Byoung Hee

    2014-10-01

    The vertically movable gate field effect transistor (VMGFET) is a FET-based sensing element, whose gate moves in a vertical direction over the channel. A VMGFET gate covers the region between source and drain. A 1 μm thick air layer separates the gate and the substrate of the VMGFET. A novel fabrication process to form a VMGFET using a silicon-on-insulator (SOI) wafer provides minimal internal stress of the gate structure. The enhancement-type n-channel VMGFET is fabricated with the threshold voltage of 2.32 V in steady state. A non-inverting amplifier is designed and integrated on a printable circuit board (PCB) to characterize device sensitivity and mechanical properties. The VMGFET is mechanically coupled to a speaker membrane to apply mechanical vibration. The oscillated drain current of FET are monitored and sampled with NI LabVIEW. The frequency of the output signal correlates with that of the input stimulus. The resonance frequency of the fabricated VMGFET is measured to be 1.11 kHz. The device sensitivity linearly increases by 0.106 mV/g Hz in the range of 150 Hz and 1 kHz.

  1. Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

    International Nuclear Information System (INIS)

    Song, In-Hyouk; Forfang, William B D; Cole, Bryan; Hee You, Byoung

    2014-01-01

    The vertically movable gate field effect transistor (VMGFET) is a FET-based sensing element, whose gate moves in a vertical direction over the channel. A VMGFET gate covers the region between source and drain. A 1 μm thick air layer separates the gate and the substrate of the VMGFET. A novel fabrication process to form a VMGFET using a silicon-on-insulator (SOI) wafer provides minimal internal stress of the gate structure. The enhancement-type n-channel VMGFET is fabricated with the threshold voltage of 2.32 V in steady state. A non-inverting amplifier is designed and integrated on a printable circuit board (PCB) to characterize device sensitivity and mechanical properties. The VMGFET is mechanically coupled to a speaker membrane to apply mechanical vibration. The oscillated drain current of FET are monitored and sampled with NI LabVIEW. The frequency of the output signal correlates with that of the input stimulus. The resonance frequency of the fabricated VMGFET is measured to be 1.11 kHz. The device sensitivity linearly increases by 0.106 mV/g Hz in the range of 150 Hz and 1 kHz. (paper)

  2. Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates.

    Science.gov (United States)

    Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Koo, Yong-Seo; Kim, Sangsig

    2009-11-11

    A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p+ drain and n+ channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

  3. Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates

    International Nuclear Information System (INIS)

    Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Kim, Sangsig; Koo, Yong-Seo

    2009-01-01

    A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p + drain and n + channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

  4. Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Kim, Sangsig [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-Dong, Seongbuk-Gu, Seoul 136-701 (Korea, Republic of); Koo, Yong-Seo, E-mail: sangsig@korea.ac.k [Department of Electrical Engineering, Seokyeong University, 16-1, Jungneung-dong, Seongbuk-gu, Seoul 136-704 (Korea, Republic of)

    2009-11-11

    A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p{sup +} drain and n{sup +} channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

  5. Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

    KAUST Repository

    Li, Jingqi

    2014-07-01

    A vertical carbon nanotube field-effect transistor (CNTFET) based on silicon (Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube (SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage (Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.

  6. Investigation of neutron-produced defects in silicon by transconductance measurements of junction field-effect transistors

    International Nuclear Information System (INIS)

    Tokuda, Y.; Usami, A.

    1976-01-01

    Defects introduced in silicon by neutron irradiation were investigated by measuring the phase angle theta of the small-signal transconductance of the junction field-effect transistors (JFET). Measurements of theta as a function of frequency allowed the determination of the time constant for each defect. From the temperature dependence of the time constant, assuming that capture cross sections are independent of temperature, the energy levels of E/sub v/+0.19 and E/sub v/+0.35 eV in p-type silicon and E/sub c/-0.16, E/sub c/-0.19, and E/sub c/-0.44 eV in n-type silicon were obtained. For these defects, calculations gave majority-carrier capture cross-section values of 2.8 x 10 -15 and 1.1 x 10 -14 cm 2 in p-type silicon, and 3.9 x 10 -14 , 1.6 x 10 -16 , and 2.3 x 10 -14 cm 2 in n-type silicon, respectively. Comparing with other published data, it was found that the energy level of E/sub c/-0.44 eV showed the value between the previously reported energy levels of E/sub c/-0.4 and E/sub c/-0.5 eV correlated with the doubly negative charge state and singly negative charge state of the divacancy, respectively. Thus, it is believed that a total of six energy levels are introduced in silicon by neutron irradiation. The energy levels of E/sub c/-0.16 and E/sub v/+0.35 eV were found to be correlated with the A center and the divacancy, respectively

  7. Density functional theory for field emission from carbon nano-structures.

    Science.gov (United States)

    Li, Zhibing

    2015-12-01

    Electron field emission is understood as a quantum mechanical many-body problem in which an electronic quasi-particle of the emitter is converted into an electron in vacuum. Fundamental concepts of field emission, such as the field enhancement factor, work-function, edge barrier and emission current density, will be investigated, using carbon nanotubes and graphene as examples. A multi-scale algorithm basing on density functional theory is introduced. We will argue that such a first principle approach is necessary and appropriate for field emission of nano-structures, not only for a more accurate quantitative description, but, more importantly, for deeper insight into field emission. Copyright © 2015 The Author. Published by Elsevier B.V. All rights reserved.

  8. Study of electronic field emission from large surfaces under static operating conditions and hyper-frequency

    International Nuclear Information System (INIS)

    Luong, M.

    1997-09-01

    The enhanced electronic field emission from large area metallic surfaces lowers performances of industrial devices that have to sustain high electric field under vacuum. Despite of numerous investigations in the past, the mechanisms of such an emission have never been well clarified. Recently, research in our laboratory has pointed out the importance played by conducting sites (particles and protrusions). A refined geometrical model, called superposed protrusions model has been proposed to explain the enhanced emission by local field enhancement. As a logical continuation, the present work aims at testing this model and, in the same time, investigating the means to suppress the emission where it is undesirable. Thus, we have showed: the cause of current fluctuations in a continuous field regime (DC), the identity of emission characteristics (β, A e ) in both radiofrequency (RF) and DC regimes, the effectiveness of a thermal treatment by extern high density electronic bombardment, the effectiveness of a mechanical treatment by high pressure rinsing with ultra pure water, the mechanisms and limits of an in situ RF processing. Furthermore, the electronic emission from insulating particles has also been studied concurrently with a spectral analysis of the associated luminous emission. Finally, the refined geometrical model for conducting sites is reinforced while another model is proposed for some insulating sites. Several emission suppressing treatments has been explored and validated. At last, the characteristic of a RF pulsed field emitted electron beam has been checked for the first time as a possible application of such a field emission. (author)

  9. Study of hydrogenated amorphous silicon devices under intense electric field: application to nuclear detection

    International Nuclear Information System (INIS)

    Ilie, A.

    1996-01-01

    The goal of this work was the study, development and optimization of hydrogenated amorphous silicon (a-Si:H) devices for use in detection of ionizing radiation in applications connected to the nuclear industry. Thick p-i-n devices, capable of withstanding large electric fields (up to 10 6 V/cm) with small currents (nA/cm 2 ), were proposed and developed. In order to decrease fabrication time, films were made using the 'He diluted' PECVD process and compared to standard a-Si:H films. Aspects connected to specific detector applications as well as to the fundamental physics of a-Si:H were considered: the internal electric field technique, in which the depletion charge was measured as a function of the applied bias voltage; study of the leakage current of p-i-n devices permitted us to demonstrate different regimes: depletion, field-enhanced thermal generation and electronic injection across the p layer. The effect of the electric field on the thermal generation of the carriers was studied considering the Poole-Frenkel and tunneling mechanisms. A model was developed taking under consideration the statistics of the correlated states and electron-phonon coupling. The results suggest that mechanisms not included in the 'standard model' of a Si:h need to be considered, such as defect relaxation, a filed-dependent mobility edge etc...; a new metastable phenomenon, called 'forming', induced by prolonged exposure to a strong electric field, was observed and studied. It is characterized by marked decrease of the leakage current and the detector noise, and increase in the breakdown voltage, as well as an improvement of carrier collection efficiency. This forming process appears to be principally due to an activation of the dopants in the p layer; finally, the capacity of thick p-i-n a Si:H devices to detect ionizing radiation has been evaluated. We show that it is possible, with 20-50 micron thick p-i-n devices, to detect the full spectrum of alpha and beta particles. With an

  10. The field emission properties from the pristine/B-doped graphene–C{sub 70} composite

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Xiaoju; Wang, Yan; Yang, Ping, E-mail: yangpingdm@ujs.edu.cn

    2017-06-28

    The aim of this paper is to implement a theoretical prediction and evaluation on the quality of graphene–C{sub 70} composite as cathode material. The pristine graphene–C{sub 70} composite and the B-doped graphene–C{sub 70} composites were constructed to investigate their field emission properties. The results suggest that the work function (WF) and ionization potential (IP) of the composites decrease with the increasing electric field. It implies that the electron emission becomes more and more easy. Under the field, the molecular orbital energy levels close to the vacuum level and their energy gap also has a declining trend. It means a good trend for improving the field emission properties of the composites. The above mentioned results show that the composites have the advanced capacity for electron emission and the potential for cathode material. It makes us believe that the composites will be the good field emission electron sources in the electronic device fabrication and the investigation can give a theoretical guidance for the corresponding experiments and may develop the application of fullerene for field emission. - Highlights: • We implement a theoretical prediction on graphene–C{sub 70} composite as cathode materials. • We detect the work function of the composite decrease with increasing electric field. • The ionization potential of the composites decrease with increasing electric field. • We find the molecular orbital energy level close to the vacuum level under the field. • The composites have the advanced capacity for electron emission as cathode material.

  11. Silicon nanowires as field-effect transducers for biosensor development: A review

    Energy Technology Data Exchange (ETDEWEB)

    Noor, M. Omair; Krull, Ulrich J., E-mail: ulrich.krull@utoronto.ca

    2014-05-01

    Highlights: • Nanoscale field-effect transducers interrogate surface charge by conductivity changes. • The nanometer dimensions of SiNWs facilitate sensitive detection of biomolecules. • SiNWs can be fabricated by bottom–up or top–down approaches. • Device parameters and solution-phase conditions strongly influence analytical performance. - Abstract: The unique electronic properties and miniaturized dimensions of silicon nanowires (SiNWs) are attractive for label-free, real-time and sensitive detection of biomolecules. Sensors based on SiNWs operate as field effect transistors (FETs) and can be fabricated either by top–down or bottom–up approaches. Advances in fabrication methods have allowed for the control of physicochemical and electronic properties of SiNWs, providing opportunity for interfacing of SiNW-FET probes with intracellular environments. The Debye screening length is an important consideration that determines the performance and detection limits of SiNW-FET sensors, especially at physiologically relevant conditions of ionic strength (>100 mM). In this review, we discuss the construction and application of SiNW-FET sensors for detection of ions, nucleic acids and protein markers. Advantages and disadvantages of the top–down and bottom–up approaches for synthesis of SiNWs are discussed. An overview of various methods for surface functionalization of SiNWs for immobilization of selective chemistry is provided in the context of impact on the analytical performance of SiNW-FET sensors. In addition to in vitro examples, an overview of the progress of use of SiNW-FET sensors for ex vivo studies is also presented. This review concludes with a discussion of the future prospects of SiNW-FET sensors.

  12. Silicon nanowires as field-effect transducers for biosensor development: A review

    International Nuclear Information System (INIS)

    Noor, M. Omair; Krull, Ulrich J.

    2014-01-01

    Highlights: • Nanoscale field-effect transducers interrogate surface charge by conductivity changes. • The nanometer dimensions of SiNWs facilitate sensitive detection of biomolecules. • SiNWs can be fabricated by bottom–up or top–down approaches. • Device parameters and solution-phase conditions strongly influence analytical performance. - Abstract: The unique electronic properties and miniaturized dimensions of silicon nanowires (SiNWs) are attractive for label-free, real-time and sensitive detection of biomolecules. Sensors based on SiNWs operate as field effect transistors (FETs) and can be fabricated either by top–down or bottom–up approaches. Advances in fabrication methods have allowed for the control of physicochemical and electronic properties of SiNWs, providing opportunity for interfacing of SiNW-FET probes with intracellular environments. The Debye screening length is an important consideration that determines the performance and detection limits of SiNW-FET sensors, especially at physiologically relevant conditions of ionic strength (>100 mM). In this review, we discuss the construction and application of SiNW-FET sensors for detection of ions, nucleic acids and protein markers. Advantages and disadvantages of the top–down and bottom–up approaches for synthesis of SiNWs are discussed. An overview of various methods for surface functionalization of SiNWs for immobilization of selective chemistry is provided in the context of impact on the analytical performance of SiNW-FET sensors. In addition to in vitro examples, an overview of the progress of use of SiNW-FET sensors for ex vivo studies is also presented. This review concludes with a discussion of the future prospects of SiNW-FET sensors

  13. THERMIONIC EMISSION ENHANCEMENT FROM CESIUM COATED RHENIUM IN ELECTRIC FIELDS

    Energy Technology Data Exchange (ETDEWEB)

    de Steese, J. G.; Zollweg, R. J.

    1963-04-15

    The plasma-anode technique was used to observe anomalously high thermionic emission from a rhenium surface with small cesium coverage, where the work function of the composite surface is greater than the ionization potential of cesium. Data suggest that emission enhancement is caused by increased cesium coverage because of cesiumion trapping near the emitter surface under the influence of an ion-rich sheath. (auth)

  14. The Adaptation Law for emissions trading. Part 2. A level playing field for emissions trading?

    International Nuclear Information System (INIS)

    Simonetti, S.

    2010-01-01

    To supplement, clarify and simplify the regulations for emission trading, the Amendment Act emission trading II was submitted to the Dutch Lower Chamber end of 2009. This article discusses the pending bill and comments on a number of remarkable stipulations that may be important to the market parties. First a brief overview is provided of the basic principles of emission trading and the players in the CO2 market. [nl

  15. Direct multielement trace analyses of silicon carbide powders by spark ablation simultaneous inductively coupled plasma optical emission spectrometry

    International Nuclear Information System (INIS)

    Kiera, Arne F.; Schmidt-Lehr, Sebastian; Song, Ming; Bings, Nicolas H.; Broekaert, Jose A.C.

    2008-01-01

    A procedure for the direct analysis of silicon carbide powders (SiC) by simultaneous detection inductively coupled plasma optical emission spectrometry using a Spectro-CIROS TM spectrometer (CCD-ICP-OES) and a novel spark ablation system Spectro-SASSy (SA) as sample introduction technique is described. The sample preparation procedure for SA of non-conducting material is based on mixing the sample powders with a conducting matrix, in this case copper and briquetting pellets. Pressing time, pressure and mixing ratio are shown to be important parameters of the pelleting technique with respect to their mechanical stability for the reliability of the analysis results. A mixing ratio of 0.2 g +0.6 g for SiC and Cu, a pressure of 10 t cm -2 and a pressing time of 8 min have been found optimum. It has also been shown that the spark parameters selected are crucial for uniform volatilization. Electron probe micrographs of the burning spots and the analytical signal magnitude showed that a rather hard spark at 100 Hz was optimum. The determination of trace elements in silicon carbide powders is demonstrated using a calibration based on the addition of standard solutions. For Al, Ti, V, Mn and Fe detection limits in the lower μg g -1 range can be achieved. Internal standardization with Y in combination with the addition of standard solutions allows relative standard deviations in the range of 4 to 24% for concentration levels of the order of 3 to 350 μg g -1

  16. Direct multielement trace analyses of silicon carbide powders by spark ablation simultaneous inductively coupled plasma optical emission spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Kiera, Arne F.; Schmidt-Lehr, Sebastian; Song, Ming [Institute for Inorganic and Applied Chemistry, University of Hamburg, Martin-Luther-King-Platz 6, D-20146 Hamburg (Germany); Bings, Nicolas H. [Institute for Inorganic and Applied Chemistry, University of Hamburg, Martin-Luther-King-Platz 6, D-20146 Hamburg (Germany)], E-mail: bings@chemie.uni-hamburg.de; Broekaert, Jose A.C. [Institute for Inorganic and Applied Chemistry, University of Hamburg, Martin-Luther-King-Platz 6, D-20146 Hamburg (Germany)

    2008-02-15

    A procedure for the direct analysis of silicon carbide powders (SiC) by simultaneous detection inductively coupled plasma optical emission spectrometry using a Spectro-CIROS{sup TM} spectrometer (CCD-ICP-OES) and a novel spark ablation system Spectro-SASSy (SA) as sample introduction technique is described. The sample preparation procedure for SA of non-conducting material is based on mixing the sample powders with a conducting matrix, in this case copper and briquetting pellets. Pressing time, pressure and mixing ratio are shown to be important parameters of the pelleting technique with respect to their mechanical stability for the reliability of the analysis results. A mixing ratio of 0.2 g +0.6 g for SiC and Cu, a pressure of 10 t cm{sup -2} and a pressing time of 8 min have been found optimum. It has also been shown that the spark parameters selected are crucial for uniform volatilization. Electron probe micrographs of the burning spots and the analytical signal magnitude showed that a rather hard spark at 100 Hz was optimum. The determination of trace elements in silicon carbide powders is demonstrated using a calibration based on the addition of standard solutions. For Al, Ti, V, Mn and Fe detection limits in the lower {mu}g g{sup -1} range can be achieved. Internal standardization with Y in combination with the addition of standard solutions allows relative standard deviations in the range of 4 to 24% for concentration levels of the order of 3 to 350 {mu}g g{sup -1}.

  17. Fabrication of graphene and ZnO nanocones hybrid structure for transparent field emission device

    Energy Technology Data Exchange (ETDEWEB)

    Zulkifli, Zurita [Department of Frontier Materials, Graduate School of Engineering, Nagoya Institute of Technology (Japan); Faculty of Electrical Engineering, Universiti Teknologi Mara (Malaysia); Shinde, Sachin M.; Suguira, Takatoshi [Department of Frontier Materials, Graduate School of Engineering, Nagoya Institute of Technology (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Graduate School of Engineering, Nagoya Institute of Technology (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, Masaki [Department of Frontier Materials, Graduate School of Engineering, Nagoya Institute of Technology (Japan)

    2015-11-30

    Graphical abstract: Fabrication of a transparent field emission device with chemical vapor deposited graphene and zinc oxide nanocones showing low turn-on field due to locally enhance electric field. - Highlights: • Demonstrated transparent field emission device with CVD graphene and ZnO nanocones. • Graphene film was coated on carbon doped ZnO nanocone prepared by ion irradiation. • Low turn-on field for the graphene/C:ZnO nanocones hybrid structure is achieved. • Graphene/C:ZnO heterostructure is promising for transparent field emission devices. - Abstract: Fabrication of a transparent and high performance electron emission device is the key challenge for suitable display applications. Here, we demonstrate fabrication of a transparent and efficient field emission device integrating large-area chemical vapor deposited graphene and carbon doped zinc oxide (C:ZnO) nanocones. The ZnO nanocones were obtained with ion irradiation process at room temperature, over which the graphene film was transferred without destroying nanocone tips. Significant enhancement in field emission properties were observed with the transferred graphene film on C:ZnO nanocones. The threshold field for hybrid and pristine C:ZnO nanocones film at current density of 1 μA/cm{sup 2} was obtained as 4.3 V/μm and 6.5 V/μm, respectively. The enhanced field emission properties with low turn-on field for the graphene/C:ZnO nanocones can be attributed to locally enhance electric field. Our finding shows that a graphene/C:ZnO hybridized structure is very promising to fabricate field emission devices without compromising with high transparency.

  18. Study of electrons photoemitted from field emission tips. Progress report, July 1, 1979-March 1, 1980

    International Nuclear Information System (INIS)

    Reifenberger, R.

    1980-02-01

    Photo-induced field emission is a technique which studies electrons that have been photoemitted from a field emission tip. This new experimental method promises to combine the proven utility of both field emission and photoemission for investigating the electronic states near a metal surface. The primary objective of the research being performed is to investigate photo-induced field emitted electrons using a tuneable cw dye laser. To fully exploit this continuously tuneable photon source, a differential energy analyzer is being constructed to allow energy resolved measurements of the photo-field emitted electrons. This report describes the progress made in implementing experiments on photo-induced field emission from July 1979 to March 1980

  19. Greenhouse gas emissions from dairy manure management: a review of field-based studies.

    Science.gov (United States)

    Owen, Justine J; Silver, Whendee L

    2015-02-01

    Livestock manure management accounts for almost 10% of greenhouse gas emissions from agriculture globally, and contributes an equal proportion to the US methane emission inventory. Current emissions inventories use emissions factors determined from small-scale laboratory experiments that have not been compared to field-scale measurements. We compiled published data on field-scale measurements of greenhouse gas emissions from working and research dairies and compared these to rates predicted by the IPCC Tier 2 modeling approach. Anaerobic lagoons were the largest source of methane (368 ± 193 kg CH4 hd(-1) yr(-1)), more than three times that from enteric fermentation (~120 kg CH4 hd(-1) yr(-1)). Corrals and solid manure piles were large sources of nitrous oxide (1.5 ± 0.8 and 1.1 ± 0.7 kg N2O hd(-1) yr(-1), respectively). Nitrous oxide emissions from anaerobic lagoons (0.9 ± 0.5 kg N2O hd(-1) yr(-1)) and barns (10 ± 6 kg N2O hd(-1) yr(-1)) were unexpectedly large. Modeled methane emissions underestimated field measurement means for most manure management practices. Modeled nitrous oxide emissions underestimated field measurement means for anaerobic lagoons and manure piles, but overestimated emissions from slurry storage. Revised emissions factors nearly doubled slurry CH4 emissions for Europe and increased N2O emissions from solid piles and lagoons in the United States by an order of magnitude. Our results suggest that current greenhouse gas emission factors generally underestimate emissions from dairy manure and highlight liquid manure systems as promising target areas for greenhouse gas mitigation. © 2014 John Wiley & Sons Ltd.

  20. Studies of annealing of neutron-produced defects in silicon by transconductance measurements of junction field-effect transistors

    International Nuclear Information System (INIS)

    Tokuda, Y.; Usami, A.

    1978-01-01

    Annealing behavior of neutron-produced defects in silicon was studied by measuring the phase angle theta of the small-signal transconductance of the junction field-effect transistors (JFET's). Three deep levels (N-1, N-2, and N-3 levels) in n-type silicon and two deep levels (P-1 and P-2 levels) in p-type silicon, introduced by irradiation, annealed gradually. Their energy levels and capture cross sections have been already reported by us. Three deep levels (P-3, P-4, and P-5 levels) were observed in annealed p-type silicon in the temperature range 150--300 0 C. For these defects, theta was measured as a function of frequency to obtain the time constant. From the temperature dependence of the time constant, assuming that capture cross sections are independent of temperature, the energy levels of P-3, P-4, and P-5 were estimated to be E/sub v/+0.21, E/sub v/+0.40, and E/sub v/+0.30 eV, respectively. The calculated hole capture cross sections of these levels were 2.2 x 10 -15 , 8.7 x 10 -14 , and 1.2 x 10 -14 cm 2 , respectively. Comparison with other published data was made. It was found that N-3 and P-2 levels corresponded to the divacancy. Furthermore, it seemed that P-3, P-4, and P-5 levels corresponded to the high-order vacancy defects

  1. Electron field emission from screen-printed graphene/DWCNT composite films

    International Nuclear Information System (INIS)

    Xu, Jinzhuo; Pan, Rong; Chen, Yiwei; Piao, Xianqin; Qian, Min; Feng, Tao; Sun, Zhuo

    2013-01-01

    Highlights: ► The field emission performance improved significantly when adding graphene into DWCNTs as the emission material. ► We set up a model of pure DWCNT films and graphene/DWCNT composite films. ► We discussed the contact barrier between emission films and electric substrates by considering the Fermi energies of silver, DWCNT and graphene. - Abstract: The electron field emission properties of graphene/double-walled carbon nanotube (DWCNT) composite films prepared by screen printing have been systematically studied. Comparing with the pure DWCNT films and pure graphene films, a significant enhancement of electron emission performance of the composite films are observed, such as lower turn-on field, higher emission current density, higher field enhancement factor, and long-term stability. The optimized composite films with 20% weight ratio of graphene show the best electron emission performance with a low turn-on field of 0.62 V μm −1 (at 1 μA cm −2 ) and a high field enhancement factor β of 13,000. A model of the graphene/DWCNT composite films is proposed, which indicate that a certain amount of graphene will contribute the electron transmission in the silver substrate/composite films interface and in the interior of composite films, and finally improve the electron emission performance of the graphene/DWCNT composite films.

  2. Field emission of carbon quantum dots synthesized from a single organic solvent.

    Science.gov (United States)

    Liu, Xiahui; Yang, Bingjun; Yang, Juan; Yu, Shengxue; Chen, Jiangtao

    2016-11-04

    In this paper, a facile synthesis of carbon quantum dots (CQDs) and its field emission performance are reported. The CQDs are prepared from a single N, N-dimethylformamide acting as carbon and nitrogen-doping sources simultaneously. The CQDs are investigated by photoluminescence, transmission electron microscopy and x-ray photoelectron spectroscopy. The CQDs have an average size of 3 nm and are doped with N atoms. CQD dispersion shows strong fluorescence under UV illumination. For the first time, the field emission behavior of CQDs coated on Si substrate is studied. As a candidate of cold cathode, the CQDs display good field emission performance. The CQD emitter reaches the current density of 1.1 mA cm(-2) at 7.0 V μm(-1) and exhibits good long-term emission stability, suggesting promising application in field emission devices.

  3. Construction and characterization of the fringe field monochromator for a field emission gun

    Science.gov (United States)

    Mook; Kruit

    2000-04-01

    Although some microscopes have shown stabilities sufficient to attain below 0.1 eV spectral resolution in high-resolution electron energy loss spectroscopy, the intrinsic energy width of the high brightness source (0.3-0.6 eV) has been limiting the resolution. To lower the energy width of the source to 50 meV without unnecessary loss of brightness, a monochromator has been designed consisting of a short (4 mm) fringe field Wien filter and a 150 nm energy selection slit (nanoslit) both to be incorporated in the gun area of the microscope. A prototype has been built and tested in an ultra-high-vacuum setup (10(-9) mbar). The monochromator, operating on a Schottky field emission gun, showed stable and reproducible operation. The nanoslits did not contaminate and the structure remained stable. By measuring the current through the slit structure a direct image of the beam in the monochromator could be attained and the monochromator could be aligned without the use of a microscope. Good dispersed imaging conditions were found indicating an ultimate resolution of 55 meV. A Mark II fringe field monochromator (FFM) was designed and constructed compatible with the cold tungsten field emitter of the VG scanning transmission microscope. The monochromator was incorporated in the gun area of the microscope at IBM T.J. Watson research center, New York. The monochromator was aligned on 100 kV and the energy distribution measured using the monochromator displayed a below 50 meV filtering capability. The retarding Wien filter spectrometer was used to show a 61 meV EELS system resolution. The FFM is shown to be a monochromator which can be aligned without the use of the electron microscope. This makes it directly applicable for scanning transmission microscopy and low-voltage scanning electron microscopy, where it can lower the resolution loss which is caused by chromatic blur of the spot.

  4. Origins of visible-light emissions in hydrogen-coated silicon nanocrystals: Role of passivating coating

    International Nuclear Information System (INIS)

    Tit, Nacir; Yamani, Z.H.; Graham, J.; Ayesh, A.

    2010-01-01

    We present a theoretical investigation of the electronic and optical properties of hydrogen-coated silicon nanocrystals (Si:H NCs). On one hand, the density-functional theory (DFT) is used to both calculate the total energy and relax the NCs. On a second hand, the tight-binding method, which includes the minimal sp 3 -basis set within the second-nearest-neighbor interaction scheme, is applied to calculate the electronic structures, oscillator strength (OS) and recombination rate (RR) versus the NC size, coating and atomic relaxation. Three main findings are reported: (i) The quantum confinement in these NCs do follow similar rule to the case of a single-particle in a box, where the confinement energy decays in power-law with the increasing NC's size. (ii) The coating is shown to play the essential role in creation of large band-gap energy lying within the visible-light energy spectrum. (iii) The surface atomic relaxation is found to reduce the band-gap energy by about 150 meV and enhance both OS and RR. Our claims are corroborated by the available experimental data.

  5. Silicon carbide detectors for diagnostics of ion emission from laser plasmas

    International Nuclear Information System (INIS)

    Musumeci, Paolo; Zimbone, Massimo; Calcagno, Lucia; Cutroneo, Maria; Torrisi, Lorenzo; Velyhan, Andry

    2014-01-01

    Silicon carbide (SiC) detectors have been employed to analyze the multi-MeV ions generated from laser plasma. The irradiation was performed with the iodine laser of Prague Asterix Laser System Laboratory operating at 10 16  W cm −2 pulse intensity. Thin metallic and polymeric targets were irradiated and the produced plasmas were monitored in the forward direction. The use of SiC detectors ensures the cutting of the visible and soft UV radiation emitted from plasma, enhancing the sensitivity to protons and very fast heavy ions. The time-of-flight spectra obtained by irradiating polymeric films with high laser pulse energy produce protons with energy in the range 1.0–2.5 MeV and all the charge states of carbon ions. The metallic Al target allows achieving energy up to 3.0 MeV for protons and 40 MeV for Al ions. All the results reveal the high performances of these detectors in terms of resolution and response time. (paper)

  6. Method of synthesizing small-diameter carbon nanotubes with electron field emission properties

    Science.gov (United States)

    Liu, Jie (Inventor); Du, Chunsheng (Inventor); Qian, Cheng (Inventor); Gao, Bo (Inventor); Qiu, Qi (Inventor); Zhou, Otto Z. (Inventor)

    2009-01-01

    Carbon nanotube material having an outer diameter less than 10 nm and a number of walls less than ten are disclosed. Also disclosed are an electron field emission device including a substrate, an optionally layer of adhesion-promoting layer, and a layer of electron field emission material. The electron field emission material includes a carbon nanotube having a number of concentric graphene shells per tube of from two to ten, an outer diameter from 2 to 8 nm, and a nanotube length greater than 0.1 microns. One method to fabricate carbon nanotubes includes the steps of (a) producing a catalyst containing Fe and Mo supported on MgO powder, (b) using a mixture of hydrogen and carbon containing gas as precursors, and (c) heating the catalyst to a temperature above 950.degree. C. to produce a carbon nanotube. Another method of fabricating an electron field emission cathode includes the steps of (a) synthesizing electron field emission materials containing carbon nanotubes with a number of concentric graphene shells per tube from two to ten, an outer diameter of from 2 to 8 nm, and a length greater than 0.1 microns, (b) dispersing the electron field emission material in a suitable solvent, (c) depositing the electron field emission materials onto a substrate, and (d) annealing the substrate.

  7. Creating a level playing field? The concentration and centralisation of emissions in the European Union Emissions Trading System

    International Nuclear Information System (INIS)

    Bryant, Gareth

    2016-01-01

    This article questions the assumption that carbon markets create a level playing field by exploring the relationship between the organisation of capital and the organisation of emissions in the European Union Emissions Trading System (EU ETS). It constructs a database by matching installations and owners to reveal that a relatively small number of large-scale coal-fired power stations, owned by a very small group of states and corporations, are responsible for a significant proportion of greenhouse gas emissions. The findings are analysed by considering how technological dependence on coal together with the corporate institutional form combine to support the socio-spatial concentration and centralisation of capital and emissions. Case studies of the consolidation of the seven largest polluting owners from Europe's coal-dependent electricity sector and the carbon trading strategies of the two largest polluters, RWE and E.ON, then assess the impacts of energy liberalisation and emissions trading policies. The article concludes that EU energy and climate policies are pulling in different directions by clustering responsibility for greenhouse gas emissions and diffusing responsibility to address climate change. The uneven distribution of emissions within the EU ETS makes an alternative policy approach that directly targets the biggest corporate and state polluters both feasible and necessary. - Highlights: • 20 ultimate owners are responsible for one-half of 2005–12 EU ETS emissions. • 83 installations are responsible for one-third of 2005–12 EU ETS emissions. • Focus on technological dependence on coal and the corporate institutional form. • Energy liberalisation policy has consolidated responsibility for emissions. • Carbon markets have diffused responsibility for addressing climate change.

  8. Leakage and field emission in side-gate graphene field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Di Bartolomeo, A., E-mail: dibant@sa.infn.it; Iemmo, L.; Romeo, F.; Cucolo, A. M. [Physics Department “E.R. Caianiello,” University of Salerno, via G. Paolo II, 84084 Fisciano (Italy); CNR-SPIN Salerno, via G. Paolo II, 84084 Fisciano (Italy); Giubileo, F. [CNR-SPIN Salerno, via G. Paolo II, 84084 Fisciano (Italy); Russo, S.; Unal, S. [Physics Department, University of Exeter, Stocker Road 6, Exeter, Devon EX4 4QL (United Kingdom); Passacantando, M.; Grossi, V. [Department of Physical and Chemical Sciences, University of L' Aquila, Via Vetoio, 67100 Coppito, L' Aquila (Italy)

    2016-07-11

    We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO{sub 2}/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO{sub 2} up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current density as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices.

  9. First image from a combined positron emission tomography and field-cycled MRI system.

    Science.gov (United States)

    Bindseil, Geron A; Gilbert, Kyle M; Scholl, Timothy J; Handler, William B; Chronik, Blaine A

    2011-07-01

    Combining positron emission tomography and MRI modalities typically requires using either conventional MRI with a MR-compatible positron emission tomography system or a modified MR system with conventional positron emission tomography. A feature of field-cycled MRI is that all magnetic fields can be turned off rapidly, enabling the use of conventional positron emission tomography detectors based on photomultiplier tubes. In this demonstration, two photomultiplier tube-based positron emission tomography detectors were integrated with a field-cycled MRI system (0.3 T/4 MHz) by placing them into a 9-cm axial gap. A positron emission tomography-MRI phantom consisting of a triangular arrangement of positron-emitting point sources embedded in an onion was imaged in a repeating interleaved sequence of ∼1 sec MRI then 1 sec positron emission tomography. The first multimodality images from the combined positron emission tomography and field-cycled MRI system show no additional artifacts due to interaction between the systems and demonstrate the potential of this approach to combining positron emission tomography and MRI. Copyright © 2010 Wiley-Liss, Inc.

  10. Testing the near field/far field model performance for prediction of particulate matter emissions in a paint factory

    DEFF Research Database (Denmark)

    Koivisto, A.J.; Jensen, A.C.Ø.; Levin, Marcus

    2015-01-01

    A Near Field/Far Field (NF/FF) model is a well-accepted tool for precautionary exposure assessment but its capability to estimate particulate matter (PM) concentrations is not well studied. The main concern is related to emission source characterization which is not as well defined for PM emitters...

  11. Electron field emission from sp -induced insulating to metallic ...

    Indian Academy of Sciences (India)

    Administrator

    Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India. MS received 20 ... emissions of amorphous carbon films have been investigated. The observed ... water followed by acetone was positioned at the centre of first zone ..... clusters islands, surface geometry, and internal structures of the films.

  12. Experimental study on the luminous radiation associated to the field emission of samples submitted to high RF fields

    International Nuclear Information System (INIS)

    Maissa, S.; Junquera, T.; Fouaidy, M.; Le Goff, A.; Luong, M.; Tan, J.; Bonin, B.; Safa, H.

    1996-01-01

    Nowadays the accelerating gradient of the RF cavities is limited by the strong field emission (FE) of electrons stemming from the metallic walls. Previous experiments evidenced luminous radiations associated with electron emission on cathodes subjected to intense DC electric field. These observations led these authors to propose new theoretical models of the field emission phenomenon. The presented experimental study extends these previous DC works to the RF case. A special copper RF cavity has been developed equipped with an optical window and a removable sample. It has been designed for measuring both electron current and luminous radiation emitted by the sample, subjected to maximum RF electric field. The optical apparatus attached to the cavity permits to characterize the radiation in terms of intensity, glowing duration and spectral distribution. The results concerning different niobium or copper samples, whom top was either scratched or intentionally contaminated with metallic or dielectric particles are summarized. (author)

  13. Experimental study on the luminous radiation associated to the field emission of samples submitted to high RF fields

    International Nuclear Information System (INIS)

    Maissa, S.; Junquera, T.; Fouaidy, M.; Le Goff, A.; Luong, M.; Tan, J.; Bonin, B.; Safa, H.

    1996-01-01

    The accelerating gradient of the RF cavities is limited by the strong field emission (FE) of electrons stemming from the metallic walls. Previous experiments evidenced luminous radiations associated with electron emission of cathodes subjected to intense DC electric field. These observations invoked the proposal of new theoretical models of the field emission phenomenon. This experimental study extends the previous DC works to the RF case. A special copper RF cavity has been developed equipped with an optical window and a removable sample. It has been designed for measuring both electron current and luminous radiation emitted by the sample, subjected to maximum RF electric field. The optical apparatus attached to the cavity permits to characterize the radiation in terms of intensity, glowing duration and spectral distribution. The results concerning different niobium or copper samples, whom top was either scratched or intentionally contaminated with metallic or dielectric particles are summarized. (author)

  14. A comparative study of nitrogen plasma effect on field emission characteristics of single wall carbon nanotubes synthesized by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Zulfequar, Mohammad [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Harsh [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Husain, Mushahid, E-mail: mush_reslab@rediffmail.com [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), New Delhi 110025 (India)

    2014-12-15

    Highlights: • Vertically aligned single wall carbon nanotubes (SWCNTs) have been successfully grown on nickel (Ni) deposited silicon substrate. • The diameter distribution of the grown (SWCNTs) is in the range 1–2 nm. • A current density of 25.0 mA/cm{sup 2} at 1.9 V/μm of the grown SWCNTs is observed with a high turn-on field (E{sub to}) of 1.3 V/μm. • After N{sub 2} nitrogen plasma treatment, huge current density of 81.5 mA/cm{sup 2} at 2.0 V/μm was recorded with low E{sub to} of 1.2 V/μm. • The comparison of these two typical results indicates a drastic enhancement in the field emission properties after plasma treatments. - Abstract: Vertically aligned single wall carbon nanotubes (SWCNTs) with large scale control of diameter, length and alignment have successfully been grown by plasma enhanced chemical vapor deposition (PECVD) system. The nickel (Ni) as catalyst deposited on silicon (Si) substrate was used to grow the SWCNTs. Field emission (FE) characteristics of the as grown SWCNTs were measured using indigenously designed setup in which a diode is configured in such a way that by applying negative voltage on the copper plate (cathode) with respect to stainless steel anode plate, current density can be recorded. To measure the FE characteristics, SWCNTs film pasted on the copper plate with silver epoxy was used as electron emitter source. The effective area of anode was ∼78.5 mm{sup 2} for field emission measurements. The emission measurements were carried out under high vacuum pressure of the order of 10{sup −6} Torr to minimize the electron scattering and degradation of the emitters. The distance between anode and cathode was kept 500 μm (constant) during entire field emission studies. The grown SWCNTs are excellent field emitters, having emission current density higher than 25 mA/cm{sup 2} at turn-on field 1.3 V/μm. In order to enhance the field emission characteristics, the as grown SWCNTs have been treated under nitrogen (N{sub 2

  15. Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes

    DEFF Research Database (Denmark)

    Madsen, Steen; Bozhevolnyi, Sergey I.; Birkelund, Karen

    1997-01-01

    Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous silicon using uncoated fiber probes display a three-peak profile after etching in potassium...... hydroxide. Numerical simulations of the electromagnetic field around the probe-sample interaction region are used to explain the experimental observations. With an aluminum-coated fiber probe, lines of 35 nm in width were transferred into the amorphous silicon layer. (C) 1997 American Institute of Physics....

  16. Increased field-emission site density from regrown carbon nanotube films

    International Nuclear Information System (INIS)

    Wang, Y.Y.; Gupta, S.; Liang, M.; Nemanich, R.J.

    2005-01-01

    Electron field-emission properties of as-grown, etched, and regrown carbon nanotube thin films were investigated. The aligned carbon nanotube films were deposited by the microwave plasma-assisted chemical vapor deposition technique. The surface of the as-grown film contained a carbon nanotube mat of amorphous carbon and entangled nanotubes with some tubes protruding from the surface. Hydrogen plasma etching resulted in the removal of the surface layer, and regrowth on the etched surface displayed the formation of a new carbon nanotube mat. The emission site density and the current-voltage dependence of the field emission from all of the samples were analyzed. The results showed that the as-grown sample had a few strong emission spots and a relatively high emission current density (∼20 μA/cm 2 at 1 V/μm), while the regrown sample exhibited a significantly increased emission site density

  17. Effects of ZnO Quantum Dots Decoration on the Field Emission Behavior of Graphene.

    Science.gov (United States)

    Sun, Lei; Zhou, Xiongtu; Lin, Zhixian; Guo, Tailiang; Zhang, Yongai; Zeng, Yongzhi

    2016-11-23

    ZnO quantum dots (QDs) have been decorated on graphene deposited on patterned Ag electrodes as a field emission cathode by a solution process. Effects of ZnO QDs on the field emission behavior of graphene are studied by experiment and first-principles calculations. The results indicate that the attachment of ZnO QDs with a C atom leads to the enhancement of electron emission from graphene, which is mainly attributed to the reduction of the work function and ionization potential, and the increase of the Fermi level of graphene after the decoration. A change in the local density distribution and the density of states near the Fermi level may also account for this behavior. Our study may help to develop new field emission composites and expand ZnO QDs in applications for electron emission devices as well.

  18. Magnetic Field Emissions for Ferrite and Non-Ferrite Geometries for Wireless Power Transfer to Vehicles

    DEFF Research Database (Denmark)

    Batra, Tushar; Schaltz, Erik

    2014-01-01

    Minimizing magnetic field emissions to surroundings is one of the most challenging design criteria for wireless power transfer to vehicles. In this paper, concept of division of the emissions into three zones (primary, secondary, and combined zone) in the vertical direction is introduced. For geo......Minimizing magnetic field emissions to surroundings is one of the most challenging design criteria for wireless power transfer to vehicles. In this paper, concept of division of the emissions into three zones (primary, secondary, and combined zone) in the vertical direction is introduced...... for vertical separation between the coils in range of 100-180 mm. It is observed that lower vertical separation results in higher overlapping of the zones and the coils behave as they are effectively placed close to center of air gap. The analysis in this work provides a better understanding of the space...... profile of magnetic field emissions (with and without ferrite) for wireless power transfer to vehicles....

  19. High performance bulk metallic glass/carbon nanotube composite cathodes for electron field emission

    International Nuclear Information System (INIS)

    Hojati-Talemi, Pejman; Gibson, Mark A.; East, Daniel; Simon, George P.

    2011-01-01

    We report the preparation of new nanocomposites based on a combination of bulk metallic glass and carbon nanotubes for electron field emission applications. The use of bulk metallic glass as the matrix ensures high electrical and thermal conductivity, high thermal stability, and ease of processing, whilst the well dispersed carbon nanotubes act as highly efficient electron emitters. These advantages, alongside excellent electron emission properties, make these composites one of the best reported options for electron emission applications to date.

  20. High performance bulk metallic glass/carbon nanotube composite cathodes for electron field emission

    Energy Technology Data Exchange (ETDEWEB)

    Hojati-Talemi, Pejman [Department of Materials Engineering, Monash University, Clayton, Vic 3800 (Australia); Mawson Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Gibson, Mark A. [Process Science and Engineering, Commonwealth Scientific and Industrial Research Organisation, Clayton, Vic 3168 (Australia); East, Daniel; Simon, George P. [Department of Materials Engineering, Monash University, Clayton, Vic 3800 (Australia)

    2011-11-07

    We report the preparation of new nanocomposites based on a combination of bulk metallic glass and carbon nanotubes for electron field emission applications. The use of bulk metallic glass as the matrix ensures high electrical and thermal conductivity, high thermal stability, and ease of processing, whilst the well dispersed carbon nanotubes act as highly efficient electron emitters. These advantages, alongside excellent electron emission properties, make these composites one of the best reported options for electron emission applications to date.

  1. Silicon detectors operating beyond the LHC collider conditions: scenarios for radiation fields and detector degradation

    International Nuclear Information System (INIS)

    Lazanu, I.; Lazanu, S.

    2004-01-01

    Particle physics makes its greatest advances with experiments at the highest energies. The way to advance to a higher energy regime is through hadron colliders, or through non-accelerator experiments, as for example the space astroparticle missions. In the near future, the Large Hadron Collider (LHC) will be operational, and beyond that, its upgrades: the Super-LHC (SLHC) and the hypothetical Very Large Hadron Collider (VLHC). At the present time, there are no detailed studies for future accelerators, except those referring to LHC. For the new hadron collider LHC and some of its updates in luminosity and energy, the silicon detectors could represent an important option, especially for the tracking system and calorimetry. The main goal of this paper is to analyse the expected long-time degradation of the silicon as material and for silicon detectors, during continuous radiation, in these hostile conditions. The behaviour of silicon in relation to various scenarios for upgrade in energy and luminosity is discussed in the frame of a phenomenological model developed previously by the authors and now extended to include new mechanisms, able to explain and give solutions to discrepancies between model predictions and detector behaviour after hadron irradiation. Different silicon material parameters resulting from different technologies are considered to evaluate what materials are harder to radiation and consequently could minimise the degradation of device parameters in conditions of continuous long time operation. (authors)

  2. Facile solution synthesis of hexagonal Alq3 nanorods and their field emission properties.

    Science.gov (United States)

    Hu, Jin-Song; Ji, Heng-Xing; Cao, An-Min; Huang, Zheng-Xi; Zhang, Yang; Wan, Li-Jun; Xia, An-Dong; Yu, Da-Peng; Meng, Xiang-Min; Lee, Shuit-Tong

    2007-08-07

    A facile self-assembly growth route assisted by surfactant has been developed to synthesize tris(8-hydroxyquinoline)aluminium (Alq(3)) nanorods with regular hexagonal shape and good crystallinity, which exhibit field-emission characteristics with a very low turn-on field of ca. 3.1 V microm(-1) and a high field-enhancement factor of ca. 1300.

  3. Wide-range and fast thermally-tunable silicon photonic microring resonators using the junction field effect.

    Science.gov (United States)

    Wang, Xiaoxi; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

    2016-10-03

    Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a "pinched" p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 μs 10%-90% transition time, and with efficiency of 3.2 μW/GHz.

  4. Multi-field electron emission pattern of 2D emitter: Illustrated with graphene

    Science.gov (United States)

    Luo, Ma; Li, Zhibing

    2016-11-01

    The mechanism of laser-assisted multi-field electron emission of two-dimensional emitters is investigated theoretically. The process is basically a cold field electron emission but having more controllable components: a uniform electric field controls the emission potential barrier, a magnetic field controls the quantum states of the emitter, while an optical field controls electron populations of specified quantum states. It provides a highly orientational vacuum electron line source whose divergence angle over the beam plane is inversely proportional to square root of the emitter height. Calculations are carried out for graphene with the armchair emission edge, as a concrete example. The rate equation incorporating the optical excitation, phonon scattering, and thermal relaxation is solved in the quasi-equilibrium approximation for electron population in the bands. The far-field emission patterns, that inherit the features of the Landau bands, are obtained. It is found that the optical field generates a characteristic structure at one wing of the emission pattern.

  5. Improved field emission performance of carbon nanotube by introducing copper metallic particles

    Directory of Open Access Journals (Sweden)

    Chen Yiren

    2011-01-01

    Full Text Available Abstract To improve the field emission performance of carbon nanotubes (CNTs, a simple and low-cost method was adopted in this article. We introduced copper particles for decorating the CNTs so as to form copper particle-CNT composites. The composites were fabricated by electrophoretic deposition technique which produced copper metallic particles localized on the outer wall of CNTs and deposited them onto indium tin oxide (ITO electrode. The results showed that the conductivity increased from 10-5 to 4 × 10-5 S while the turn-on field was reduced from 3.4 to 2.2 V/μm. Moreover, the field emission current tended to be undiminished after continuous emission for 24 h. The reasons were summarized that introducing copper metallic particles to decorate CNTs could increase the surface roughness of the CNTs which was beneficial to field emission, restrain field emission current from saturating when the applied electric field was above the critical field. In addition, it could also improve the electrical contact by increasing the contact area between CNT and ITO electrode that was beneficial to the electron transport and avoided instable electron emission caused by thermal injury of CNTs.

  6. Study of Thermal-Field Emission Properties and Investigation of Temperature dependent Noise in the Emission Current form vertical Carbon nanotube emitters

    KAUST Repository

    Kolekar, Sadhu; Patole, Shashikant P.; Patil, Sumati; Yoo, J.B.; Dharmadhikari, C.V.

    2017-01-01

    We have investigated temperature dependent field electron emission characteristics of vertical carbon nanotubes (CNTs). The generalized expression for electron emission from well defined cathode surface is given by Millikan and Lauritsen [1

  7. Ultrafast electron field emission from gold resonant antennas studied by two terahertz pulse experiments

    DEFF Research Database (Denmark)

    Iwaszczuk, Krzysztof; Zalkovskij, Maksim; Strikwerda, Andrew C.

    2015-01-01

    Summary form only given. Ultrafast electron field emission from gold resonant antennas induced by strong terahertz (THz) transient is investigated using two THz pulse experiments. It is shown that UV emission from nitrogen plasma generated by liberated electrons is a good indication of the local...

  8. Simulating emissions of 1,3-dichloropropene after soil fumigation under field conditions.

    Science.gov (United States)

    Yates, S R; Ashworth, D J

    2018-04-15

    Soil fumigation is an important agricultural practice used to produce many vegetable and fruit crops. However, fumigating soil can lead to atmospheric emissions which can increase risks to human and environmental health. A complete understanding of the transport, fate, and emissions of fumigants as impacted by soil and environmental processes is needed to mitigate atmospheric emissions. Five large-scale field experiments were conducted to measure emission rates for 1,3-dichloropropene (1,3-D), a soil fumigant commonly used in California. Numerical simulations of these experiments were conducted in predictive mode (i.e., no calibration) to determine if simulation could be used as a substitute for field experimentation to obtain information needed by regulators. The results show that the magnitude of the volatilization rate and the total emissions could be adequately predicted for these experiments, with the exception of a scenario where the field was periodically irrigated after fumigation. In addition, the timing of the daily peak 1,3-D emissions was not accurately predicted for these experiments due to the peak emission rates occurring during the night or early-morning hours. This study revealed that more comprehensive mathematical models (or adjustments to existing models) are needed to fully describe emissions of soil fumigants from field soils under typical agronomic conditions. Published by Elsevier B.V.

  9. Systematic Field Study of NO(x) Emission Control Methods for Utility Boilers.

    Science.gov (United States)

    Bartok, William; And Others

    A utility boiler field test program was conducted. The objectives were to determine new or improved NO (x) emission factors by fossil fuel type and boiler design, and to assess the scope of applicability of combustion modification techniques for controlling NO (x) emissions from such installations. A statistically designed test program was…

  10. “Comprehensive emission measurements from prescribed burning in Florida: field and laboratory, aerial and ground”

    Science.gov (United States)

    Simultaneous aerial- and ground-based emission sampling was conducted during prescribed burns at Eglin Air Force Base in November 2012 on a short grass/shrub field and a pine forest. Cumulative emission samples for volatile organic comounds, elemental carbon, organic carbon, ch...

  11. Comprehensive emission measurements from prescribed burning in Florida: field and laboratory, aerial and ground

    Science.gov (United States)

    Simultaneous aerial- and ground-based emission sampling was conducted during prescribed burns at Eglin Air Force Base in November 2012 on a short grass/shrub field and a pine forest. Cumulative emission samples for volatile organic compounds, elemental carbon, organic carbon, c...

  12. Effect of a microwave field on the cascade arc light emission

    NARCIS (Netherlands)

    Gerasimov, N.T.; Rosado, R.J.; Schram, D.C.

    1977-01-01

    The effect of a pulsed microwave field on the integral light emission from the argon plasma of a DC atmospheric-pressure cascade arc is investigated experimentally. An intensive light pulse and oscillations of light emission at frequencies of the order of 10 kHz are observed. The shape and amplitude

  13. Enhanced performance of thermal-assisted electron field emission based on barium oxide nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Yunkang [Department of Mathematics and Physics, Nanjing Institute of technology, Nanjing, 211167 (China); Chen, Jing, E-mail: chenjingmoon@gmail.com [School of Electronic Science & Engineering, Southeast University, Nanjing, 210096 (China); Zhang, Yuning; Zhang, Xiaobing; Lei, Wei; Di, Yunsong [School of Electronic Science & Engineering, Southeast University, Nanjing, 210096 (China); Zhang, Zichen, E-mail: zz241@ime.ac.cn [Integrated system for Laser applications Group, Institute of Microelectronics of Chinese Academy of Sciences, 100029, Beijing (China)

    2017-02-28

    Highlights: • A possible mechanism for thermal-assisted electric field was demonstrated. • A new path for the architecture of the novel nanomaterial and methodology for its potential application in the field emission device area was provided. • The turn-on field, the threshold field and the field emission current density were largely related to the temperature of the cathode. • The relationship between the work function of emitter material and the temperature of emitter was found. - Abstract: In this paper, thermal-assisted field emission properties of barium oxide (BaO) nanowire synthesized by a chemical bath deposition method were investigated. The morphology and composition of BaO nanowire were characterized by field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SED), X-ray diffraction (XRD), and energy dispersive X-ray spectrometer (EDX) respectively. The turn-on field, threshold field and the emission current density could be affected relatively due to the thermal-assisted effect when the electric field was applied, in the meanwhile, the turn-on field for BaO nanowire was measured to be decreased from 1.12 V/μm to 0.66 V/μm when the temperature was raised from 293 K to 593 K, whereas for the threshold field was found to decrease from 3.64 V/μm to 2.12 V/μm. The improved performance was demonstrated due to the reduced work function of the BaO nanowire as the agitation temperature increasing, leading to the higher probability of electrons tunneling through the energy barrier and enhancement of the field emission properties of BaO emitters.

  14. Enhanced performance of thermal-assisted electron field emission based on barium oxide nanowire

    International Nuclear Information System (INIS)

    Cui, Yunkang; Chen, Jing; Zhang, Yuning; Zhang, Xiaobing; Lei, Wei; Di, Yunsong; Zhang, Zichen

    2017-01-01

    Highlights: • A possible mechanism for thermal-assisted electric field was demonstrated. • A new path for the architecture of the novel nanomaterial and methodology for its potential application in the field emission device area was provided. • The turn-on field, the threshold field and the field emission current density were largely related to the temperature of the cathode. • The relationship between the work function of emitter material and the temperature of emitter was found. - Abstract: In this paper, thermal-assisted field emission properties of barium oxide (BaO) nanowire synthesized by a chemical bath deposition method were investigated. The morphology and composition of BaO nanowire were characterized by field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SED), X-ray diffraction (XRD), and energy dispersive X-ray spectrometer (EDX) respectively. The turn-on field, threshold field and the emission current density could be affected relatively due to the thermal-assisted effect when the electric field was applied, in the meanwhile, the turn-on field for BaO nanowire was measured to be decreased from 1.12 V/μm to 0.66 V/μm when the temperature was raised from 293 K to 593 K, whereas for the threshold field was found to decrease from 3.64 V/μm to 2.12 V/μm. The improved performance was demonstrated due to the reduced work function of the BaO nanowire as the agitation temperature increasing, leading to the higher probability of electrons tunneling through the energy barrier and enhancement of the field emission properties of BaO emitters.

  15. Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography.

    Science.gov (United States)

    Van Elburg, Devin J; Noble, Scott D; Hagey, Simone; Goertzen, Andrew L

    2018-02-26

    Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials ('100MP', 'A100', and 'GPA') were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude degradation

  16. Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography

    Science.gov (United States)

    Van Elburg, Devin J.; Noble, Scott D.; Hagey, Simone; Goertzen, Andrew L.

    2018-03-01

    Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials (‘100MP’, ‘A100’, and ‘GPA’) were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude

  17. TAURUS observations of the emission-line velocity field of Centaurus A (NGC 5128)

    International Nuclear Information System (INIS)

    Taylor, K.; Atherton, P.D.

    1983-01-01

    Using TAURUS - an Imaging Fabry Perot system in conjunction with the IPCS on the AAT, the authors have studied the velocity field of the Hα emission line at a spatial resolution of 1.7'' over the dark lane structure of Centaurus A. The derived velocity field is quite symmetrical and strongly suggests that the emission line material is orbiting the elliptical component, as a warped disc. (orig.)

  18. Tuning of structural, light emission and wetting properties of nanostructured copper oxide-porous silicon matrix formed on electrochemically etched copper-coated silicon substrates

    Science.gov (United States)

    Naddaf, M.

    2017-01-01

    Matrices of copper oxide-porous silicon nanostructures have been formed by electrochemical etching of copper-coated silicon surfaces in HF-based solution at different etching times (5-15 min). Micro-Raman, X-ray diffraction and X-ray photoelectron spectroscopy results show that the nature of copper oxide in the matrix changes from single-phase copper (I) oxide (Cu2O) to single-phase copper (II) oxide (CuO) on increasing the etching time. This is accompanied with important variation in the content of carbon, carbon hydrides, carbonyl compounds and silicon oxide in the matrix. The matrix formed at the low etching time (5 min) exhibits a single broad "blue" room-temperature photoluminescence (PL) band. On increasing the etching time, the intensity of this band decreases and a much stronger "red" PL band emerges in the PL spectra. The relative intensity of this band with respect to the "blue" band significantly increases on increasing the etching time. The "blue" and "red" PL bands are attributed to Cu2O and porous silicon of the matrix, respectively. In addition, the water contact angle measurements reveal that the hydrophobicity of the matrix surface can be tuned from hydrophobic to superhydrophobic state by controlling the etching time.

  19. Room temperature Coulomb blockade mediated field emission via self-assembled gold nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Fei [College of Physics and Electronics, Central South University, Changsha, Hunan 410073 (China); College of Science, National University of Defense Technology, Changsha, Hunan 410073 (China); Fang, Jingyue, E-mail: fjynudt@aliyun.com [College of Science, National University of Defense Technology, Changsha, Hunan 410073 (China); Chang, Shengli; Qin, Shiqiao; Zhang, Xueao [College of Science, National University of Defense Technology, Changsha, Hunan 410073 (China); Xu, Hui, E-mail: cmpxhg@csu.edu.cn [College of Physics and Electronics, Central South University, Changsha, Hunan 410073 (China)

    2017-02-05

    Coulomb blockade mediated field-emission current was observed in single-electron tunneling devices based on self-assembled gold nanoparticles at 300 K. According to Raichev's theoretical model, by fixing a proper geometric distribution of source, island and drain, the transfer characteristics can be well explained through a combination of Coulomb blockade and field emission. Coulomb blockade and field emission alternately happen in our self-assembled devices. The Coulomb island size derived from the experimental data is in good agreement with the average size of the gold nanoparticles used in the device. The integrated tunneling can be adjusted via a gate electrode. - Highlights: • The phenomenon of single-electron field emission in a transistor setting using self-assembled gold nanoparticles was investigated. • The transfer characteristics can be well explained by the model that is a combination of Coulomb blockage and field emission. • This transport mechanism is novel and may be used in many applications in field emission devices.

  20. Stability of field emission current from porous n-GaAs(110)

    Science.gov (United States)

    Tondare, V. N.; Naddaf, M.; Bhise, A. B.; Bhoraskar, S. V.; Joag, D. S.; Mandale, A. B.; Sainkar, S. R.

    2002-02-01

    Field electron emission from porous GaAs has been investigated. The emitter was prepared by anodic etching of n-GaAs (110) in 0.1 M HCl solution. The as-etched porous GaAs shows nonlinear Fowler-Nordheim (FN) characteristics, with a low onset voltage. The emitter, after operating for 6 h at the residual gas pressure of 1×10-8 mbar, shows a linear FN characteristics with a relatively high onset voltage and poor field emission current stability as compared to the as-etched emitter. The change in the behavior was attributed to the residual gas ion bombardment during field electron emission. X-ray photoelectron spectroscopic investigations were carried out on as-etched sample and the one which was studied for field emission. The studies indicate that the as-etched surface contains As2O3 and the surface after field electron emission for about 6 h becomes gallium rich. The presence of As2O3 seems to be a desirable feature for the stable field emission current.

  1. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my [Centre of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

    2014-03-24

    Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

  2. Reducing field emission in the superconducting rf cavities for the next generation of particle accelerators

    International Nuclear Information System (INIS)

    Shu, Q.S.; Hartung, W.; Leibovich, A.; Kirchgessner, J.; Moffat, D.; Padamsee, H.; Rubin, D.; Sears, J.

    1991-01-01

    This paper reports on field emission, which is an obstacle to reaching the higher fields called for in future applications of superconducting radio frequency cavities to particle accelerators. The authors used heat treatment up to 1500 degrees C in an ultra-high vacuum furnace, along with processing of cavities and temperature mapping, to suppress field emission and analyze emitter properties. In 27 tests of 1-cell 1500 MHz fired accelerating cavities, on the average the accelerating field E acc increased to 24 MV/m (H pk = 1250 Oe) from 13 MV/m with chemical treatment alone; the highest E acc reached was 30.5 MV/m

  3. Charge Losses in Silicon Sensors and Electric-Field Studies at the Si-SiO$_2$ Interface

    CERN Document Server

    Poehlsen, Thomas

    Electric fields and charge losses in silicon sensors before and after irradiation with x-rays, protons, neutrons or mixed irradiation are studied in charge-collection measurements. Electron-hole pairs ($eh$ pairs) are generated at different positions in the sensor using sub-ns pulsed laser light of different wavelengths. Light of 1063 nm, 830 nm and 660 nm wavelength is used to generate $eh$ pairs along the whole sensor depth, a few $\\mu$m below the surface and very close to the surface, respectively. Segmented p$^+$n silicon strip sensors are used to study the electric field below the SiO$_2$ separating the strip implants. The sensors are investigated before and after irradiation with 12 keV x-rays to a dose of 1 MGy. It is found that the electric field close to the Si-SiO$_2$ interface depends on both the irradiation dose and the biasing history. For the non-irradiated sensors the observed dependence of the electric field on biasing history and humidity is qualitatively as expected from simulations of the...

  4. Silicon nanowire hot carrier electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.

    2016-08-31

    Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.

  5. Interstellar Magnetic Fields and Polarimetry of Dust Emission

    Science.gov (United States)

    Dowell, Darren

    2010-01-01

    Magnetic fields are an important ingredient in the stormy cosmos. Magnetic fields: (1) are intimately involved with winds from Active Galactic Nuclei (AGN) and stars (2) create at least some of the structures observed in the ISM (3) modulate the formation of clouds, cores, and stars within a turbulent medium (4) may be dynamically important in protostellar accretion disks (5) smooth weak shocks (C-shocks).

  6. Particle Acceleration, Magnetic Field Generation, and Emission in Relativistic Shocks

    Science.gov (United States)

    Nishikawa, Ken-IchiI.; Hededal, C.; Hardee, P.; Richardson, G.; Preece, R.; Sol, H.; Fishman, G.

    2004-01-01

    Shock acceleration is an ubiquitous phenomenon in astrophysical plasmas. Plasma waves and their associated instabilities (e.g., the Buneman instability, two-streaming instability, and the Weibel instability) created in the shocks are responsible for particle (electron, positron, and ion) acceleration. Using a 3-D relativistic electromagnetic particle (m) code, we have investigated particle acceleration associated with a relativistic jet front propagating through an ambient plasma with and without initial magnetic fields. We find only small differences in the results between no ambient and weak ambient parallel magnetic fields. Simulations show that the Weibel instability created in the collisionless shock front accelerates particles perpendicular and parallel to the jet propagation direction. New simulations with an ambient perpendicular magnetic field show the strong interaction between the relativistic jet and the magnetic fields. The magnetic fields are piled up by the jet and the jet electrons are bent, which creates currents and displacement currents. At the nonlinear stage, the magnetic fields are reversed by the current and the reconnection may take place. Due to these dynamics the jet and ambient electron are strongly accelerated in both parallel and perpendicular directions.

  7. Photonic Torque Microscopy of the Nonconservative Force Field for Optically Trapped Silicon Nanowires

    Czech Academy of Sciences Publication Activity Database

    Irrera, A.; Maggazu, A.; Artoni, P.; Simpson, Stephen Hugh; Hanna, S.; Jones, P.H.; Priolo, F.; Gucciardi, P. G.; Marago, O.M.

    2016-01-01

    Roč. 16, č. 7 (2016), s. 4181-4188 ISSN 1530-6984 R&D Projects: GA ČR GB14-36681G Institutional support: RVO:68081731 Keywords : optical tweezers * silicon nanowires * nonequilibrium dynamics * Brownian motion Subject RIV: BH - Optics, Masers, Lasers Impact factor: 12.712, year: 2016

  8. Effects of transverse temperature field nonuniformity on stress in silicon sheet growth

    Science.gov (United States)

    Mataga, P. A.; Hutchinson, J. W.; Chalmers, B.; Bell, R. O.; Kalejs, J. P.

    1987-01-01

    Stress and strain rate distributions are calculated using finite element analysis for steady-state growth of thin silicon sheet temperature nonuniformities imposed in the transverse (sheet width) dimension. Significant reductions in residual stress are predicted to occur for the case where the sheet edge is cooled relative to its center provided plastic deformation with high creep rates is present.

  9. Evaluation of field emission properties from multiple-stacked Si quantum dots

    International Nuclear Information System (INIS)

    Takeuchi, Daichi; Makihara, Katsunori; Ohta, Akio; Ikeda, Mitsuhisa; Miyazaki, Seiichi

    2016-01-01

    Multiple-stacked Si quantum dots (QDs) with ultrathin SiO 2 interlayers were formed on ultrathin SiO 2 layers by repeating a process sequence consisting of the formation of Si-QDs by low pressure chemical vapor deposition using a SiH 4 gas and the surface oxidation and subsequent surface modification by remote hydrogen and oxygen plasmas, respectively. To clarify the electron emission mechanism from multiple-stacked Si-QDs covered with an ultrathin Au top electrode, the energy distribution of the emitted electrons and its electric field dependence was measured using a hemispherical electron energy analyzer in an X-ray photoelectron spectroscopy system under DC bias application to the multiple-stacked Si-QD structure. At − 6 V and over, the energy distributions reached a peak at ~ 2.5 eV with a tail toward the higher energy side. While the electron emission intensity was increased exponentially with an increase in the applied DC bias, there was no significant increase in the emission peak energy. The observed emission characteristics can be interpreted in terms of field emissions from the second and/or third topmost Si-QDs resulting from the electric concentration there. - Highlights: • Electron field emission from 6-fold stack of Si-QDs has been evaluated. • AFM measurements show the local electron emission from individual Si-QDs. • Impact of applied bias on the electron emission energy distribution was investigated.

  10. Field emission properties of ring-shaped Si ridges with DLC coating

    Science.gov (United States)

    Prommesberger, Christian; Ławrowski, Robert; Langer, Christoph; Mecani, Mirgen; Huang, Yifeng; She, Juncong; Schreiner, Rupert

    2017-05-01

    We report on the fabrication and the emission characterization of single ring-shaped Si ridges with a coating of diamond-like carbon (DLC). The reactive ion etching and the subsequent inductively coupled plasma step were adjusted to realize ring-shaped Si ridges with a height of 7.5 μm respectively 15 μm and an apex radius of 20 - 25 nm. The samples were coated with a DLC layer (thickness ≈ 2 - 5 nm) by a filtered cathodic vacuum arc deposition system in order to lower the work function of the emitter and to improve the field emission characteristics. The field emission characterizations were done in diode configuration with cathode and anode separated by a 50 μm thick mica spacer. A higher emission current was carried out for the ring-shaped Si ridge in comparison to the point-shaped Si tips due to the increased emission area. The highest emission current of 0.22 μA at 1000 V was measured on a DLC-coated sample with the highest aspect ratio. No degradation of the emission current was observed in the plateau regime during a measurement period of 6 h. Finally, no decreasing performance of the field emission properties was found due to changes in the geometry or destructions.

  11. Estimation of methane and nitrous oxide emissions from paddy fields in Taiwan

    International Nuclear Information System (INIS)

    Yang, Shang-Shyng; Lai, Chao-Ming; Chang, Hsiu-Lan; Chang, Ed-Huan; Wei, Chia-Bei

    2009-01-01

    To investigate the greenhouse gases emissions from paddy fields, methane and nitrous oxide emissions were estimated with the local measurement and the IPCC method during 1990-2006 in Taiwan. Annual methane emission ranged from 9001 to 14,980 ton in the first crop season for 135,314-242,298 ha of paddy fields, and it was between 16,412 and 35,208 ton for 101,710-211,968 ha in the second crop season with the local measurement for intermittent irrigation. The value ranged from 31,122 to 55,729 ton of methane emission in the first crop season, and it was between 29,493 and 61,471 ton in the second crop season with the IPCC guideline for continuous flooding. Annual nitrous oxide emission from paddy fields was between 371 and 728 ton in the first crop season, and the value ranged from 163 to 365 ton in the second crop season with the local measurement. Methane emission from paddy fields in Taiwan for intermittent irrigation was only 26.72-28.92%, 55.65-57.32% and 41.19-43.10% with the IPCC guidelines for continuous flooding and mean temperature of transplanting stage in the first crop, the second crop and total paddy fields, respectively. The values were 53.44-57.84%, 111.29-114.55% and 82.38-86.20% with the IPCC guidelines for single aeration and mean temperature of transplanting stage, respectively; and the values were 133.60-144.61%, 282.56-286.62% and 205.96-215.49% with the IPCC guidelines for multiple aeration and mean temperature of transplanting stage, respectively. Intermittent irrigation in paddy fields reduces methane emission significantly; appropriate application of nitrogen fertilizer and irrigation in paddy fields also decreases nitrous oxide emission. (author)

  12. Beam Dynamics Simulations of Optically-Enhanced Field Emission from Structured Cathodes

    Energy Technology Data Exchange (ETDEWEB)

    Seymour, A. [Northern Illinois U.; Grote, D. [LLNL, Livermore; Mihalcea, D. [Northern Illinois U.; Piot, P. [Fermilab; Vay, J.-L. [LBNL, Berkeley

    2014-01-01

    Structured cathodes - cathodes with a segmented emission surface - are finding an increasing number of applications and can be combined with a variety of emission mechanisms, including photoemission and field emission. These cathodes have been used to enhance the quantum efficiency of metallic cathodes when operated as plasmonic cathodes, have produced high-current electron bunches though field emission from multiple tips, and can be used to form beams with transverse segmentations necessary for improving the performance of accelerator-based light sources. In this report we present recent progress towards the development of finite-difference time-domain particle-in-cell simulations using the emission process in structured cathodes based on the WARP framework. The simulations give further insight on the localized source of the emitted electrons which could be used for additional high-fidelity start-to-end simulations of electron accelerators that employ this type of electron source.

  13. The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via

    Directory of Open Access Journals (Sweden)

    M. H. Liao

    2013-08-01

    Full Text Available The thermo-elastic strain is induced by through silicon vias (TSV due to the difference of thermal expansion coefficients between the copper (∼18 ppm/ °C and silicon (∼2.8 ppm/ °C when the structure is exposed to a thermal ramp budget in the three dimensional integrated circuit (3DIC process. These thermal expansion stresses are high enough to introduce the delamination on the interfaces between the copper, silicon, and isolated dielectric. A compact analytic model for the strain field induced by different layouts of thermal copper filled TSVs with the linear superposition principle is found to have large errors due to the strong stress interaction between TSVs. In this work, a nonlinear stress analytic model with different TSV layouts is demonstrated by the finite element method and the analysis of the Mohr's circle. The characteristics of stress are also measured by the atomic force microscope-raman technique with nanometer level space resolution. The change of the electron mobility with the consideration of this nonlinear stress model for the strong interactions between TSVs is ∼2–6% smaller in comparison with those from the consideration of the linear stress superposition principle only.

  14. CMOS-compatible fabrication of top-gated field-effect transistor silicon nanowire-based biosensors

    International Nuclear Information System (INIS)

    Ginet, Patrick; Akiyama, Sho; Takama, Nobuyuki; Fujita, Hiroyuki; Kim, Beomjoon

    2011-01-01

    Field-effect transistor (FET) nanowire-based biosensors are very promising tools for medical diagnosis. In this paper, we introduce a simple method to fabricate FET silicon nanowires using only standard microelectromechanical system (MEMS) processes. The key steps of our fabrication process were a local oxidation of silicon (LOCOS) and anisotropic KOH etchings that enabled us to reduce the width of the initial silicon structures from 10 µm to 170 nm. To turn the nanowires into a FET, a top-gate electrode was patterned in gold next to them in order to apply the gate voltage directly through the investigated liquid environment. An electrical characterization demonstrated the p-type behaviour of the nanowires. Preliminary chemical sensing tested the sensitivity to pH of our device. The effect of the binding of streptavidin on biotinylated nanowires was monitored in order to evaluate their biosensing ability. In this way, streptavidin was detected down to a 100 ng mL −1 concentration in phosphate buffered saline by applying a gate voltage less than 1.2 V. The use of a top-gate electrode enabled the detection of biological species with only very low voltages that were compatible with future handheld-requiring applications. We thus demonstrated the potential of our devices and their fabrication as a solution for the mass production of efficient and reliable FET nanowire-based biological sensors

  15. Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

    Directory of Open Access Journals (Sweden)

    Sofiane Khachroumi

    2010-01-01

    Full Text Available Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon, permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned.

  16. Record high efficiency of screen-printed silicon aluminum back surface field solar cell: 20.29%

    Science.gov (United States)

    Kim, Ki Hyung; Park, Chang Sub; Doo Lee, Jae; Youb Lim, Jong; Yeon, Je Min; Kim, Il Hwan; Lee, Eun Joo; Cho, Young Hyun

    2017-08-01

    We have achieved a record high cell efficiency of 20.29% for an industrial 6-in. p-type monocrystalline silicon solar cell with a full-area aluminum back surface field (Al-BSF) by simply modifying the cell structure and optimizing the process with the existing cell production line. The cell efficiency was independently confirmed by the Solar Energy Research Institute of Singapore (SERIS). To increase the cell efficiency, for example, in four busbars, double printing, a lightly doped emitter with a sheet resistance of 90 to 100 Ω/□, and front surface passivation by using silicon oxynitride (SiON) on top of a silicon nitride (SiN x ) antireflection layer were adopted. To optimize front side processing, PC1D simulation was carried out prior to cell fabrication. The resulting efficiency gain is 0.64% compared with that in the reference cells with three busbars, a single antireflection coating layer, and a low-sheet-resistance emitter.

  17. HARD X-RAY EMISSION DURING FLARES AND PHOTOSPHERIC FIELD CHANGES

    International Nuclear Information System (INIS)

    Burtseva, O.; Petrie, G. J. D.; Pevtsov, A. A.; Martínez-Oliveros, J. C.

    2015-01-01

    We study the correlation between abrupt permanent changes of magnetic field during X-class flares observed by the Global Oscillation Network Group and Helioseismic and Magnetic Imager instruments, and the hard X-ray (HXR) emission observed by RHESSI, to relate the photospheric field changes to the coronal restructuring and investigate the origin of the field changes. We find that spatially the early RHESSI emission corresponds well to locations of the strong field changes. The field changes occur predominantly in the regions of strong magnetic field near the polarity inversion line (PIL). The later RHESSI emission does not correspond to significant field changes as the flare footpoints are moving away from the PIL. Most of the field changes start before or around the start time of the detectable HXR signal, and they end at about the same time or later than the detectable HXR flare emission. Some of the field changes propagate with speed close to that of the HXR footpoint at a later phase of the flare. The propagation of the field changes often takes place after the strongest peak in the HXR signal when the footpoints start moving away from the PIL, i.e., the field changes follow the same trajectory as the HXR footpoint, but at an earlier time. Thus, the field changes and HXR emission are spatio-temporally related but not co-spatial nor simultaneous. We also find that in the strongest X-class flares the amplitudes of the field changes peak a few minutes earlier than the peak of the HXR signal. We briefly discuss this observed time delay in terms of the formation of current sheets during eruptions

  18. Optical field emission from resonant gold nanorods driven by femtosecond mid-infrared pulses

    Energy Technology Data Exchange (ETDEWEB)

    Kusa, F. [Department of Applied Physics, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei Tokyo 184-8588 (Japan); Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Echternkamp, K. E.; Herink, G.; Ropers, C. [4th Physical Institute – Solids and Nanostructures, University of Göttingen, 37077 Göttingen (Germany); Ashihara, S., E-mail: ashihara@iis.u-tokyo.ac.jp [Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2015-07-15

    We demonstrate strong-field photoelectron emission from gold nanorods driven by femtosecond mid-infrared optical pulses. The maximum photoelectron yield is reached at the localized surface plasmon resonance, indicating that the photoemission is governed by the resonantly-enhanced optical near-field. The wavelength- and field-dependent photoemission yield allows for a noninvasive determination of local field enhancements, and we obtain intensity enhancement factors close to 1300, in good agreement with finite-difference time domain computations.

  19. Nitrogen plasma formation through terahertz-induced ultrafast electron field emission

    DEFF Research Database (Denmark)

    Iwaszczuk, Krzysztof; Zalkovskij, Maksim; Strikwerda, Andrew

    2015-01-01

    Electron microscopy and electron diffraction techniques rely on electron sources. Those sources require strong electric fields to extract electrons from metals, either by the photoelectric effect, driven by multiphoton absorption of strong laser fields, or in the static field emission regime....... Terahertz (THz) radiation, commonly understood to be nonionizing due to its low photon energy, is here shown to produce electron field emission. We demonstrate that a carrier-envelope phase-stable single-cycle optical field at THz frequencies interacting with a metallic microantenna can generate...... and accelerate ultrashort and ultrabright electron bunches into free space, and we use these electrons to excite and ionize ambient nitrogen molecules near the antenna. The associated UV emission from the gas forms a novel THz wave detector, which, in contrast with conventional photon-counting or heat...

  20. Emission characteristics in solution-processed asymmetric white alternating current field-induced polymer electroluminescent devices

    Science.gov (United States)

    Chen, Yonghua; Xia, Yingdong; Smith, Gregory M.; Gu, Yu; Yang, Chuluo; Carroll, David L.

    2013-01-01

    In this work, the emission characteristics of a blue fluorophor poly(9, 9-dioctylfluorene) (PFO) combined with a red emitting dye: Bis(2-methyl-dibenzo[f,h]quinoxaline)(acetylacetonate)iridium (III) [Ir(MDQ)2(acac)], are examined in two different asymmetric white alternating current field-induced polymer electroluminescent (FIPEL) device structures. The first is a top-contact device in which the triplet transfer is observed resulting in the concentration-dependence of the emission similar to the standard organic light-emitting diode (OLED) structure. The second is a bottom-contact device which, however, exhibits concentration-independence of emission. Specifically, both dye emission and polymer emission are found for the concentrations as high as 10% by weight of the dye in the emitter. We attribute this to the significant different carrier injection characteristics of the two FIPEL devices. Our results suggest a simple and easy way to realize high-quality white emission.

  1. Testing climate-smart irrigation strategies to reduce methane emissions from rice fields

    Science.gov (United States)

    Runkle, B.; Suvocarev, K.; Reba, M. L.

    2017-12-01

    Approximately 11% of the global 308 Tg CH4 anthropogenic emissions are currently attributed to rice cultivation. In this study, the impact of water conservation practices on rice field CH4 emissions was evaluated in Arkansas, the leading state in US rice cultivation. While conserving water, the Alternate Wetting and Drying (AWD) irrigation practice can also reduce CH4 emissions through the deliberate, periodic introduction of aerobic conditions. Seasonal CH4emissions from a pair of adjacent, production-sized rice fields were estimated and compared during the 2015 to 2017 growing seasons using the eddy covariance method on each field. The fields were alternately treated with continuous flood (CF) and AWD irrigation. In 2015, the seasonal cumulative carbon losses by CH4 emission were 30.3 ± 6.3 and 141.9 ± 8.6 kg CH4-C ha-1 for the AWD and CF treatments, respectively. Data from 2016 and 2017 will be analyzed and shown within this presentation; an initial view demonstrates consistent findings to 2015. When accounting for differences in field conditions and soils, the AWD practice is attributable to a 36-51% reduction in seasonal emissions. The substantial decrease in CH4 emissions by AWD supports previous chamber-based research and offers strong evidence for the efficacy of AWD in reducing CH4 emissions in Arkansas rice production. The AWD practice has enabled the sale of credits for carbon offsets trading and this new market could encourage CH4 emissions reductions on a national scale. These eddy covariance towers are being placed into a regional perspective including crop and forest land in the three states comprising the Mississippi Delta: Arkansas, Mississippi, and Louisiana.

  2. Enhancement of field emission and photoluminescence properties of graphene-SnO2 composite nanostructures.

    Science.gov (United States)

    Ding, Jijun; Yan, Xingbin; Li, Jun; Shen, Baoshou; Yang, Juan; Chen, Jiangtao; Xue, Qunji

    2011-11-01

    In this study, the SnO(2) nanostructures and graphene-SnO(2) (G-SnO(2)) composite nanostructures were prepared on n-Si (100) substrates by electrophoretic deposition and magnetron sputtering techniques. The field emission of SnO(2) nanostructures is improved largely by depositing graphene buffer layer, and the field emission of G-SnO(2) composite nanostructures can also further be improved by decreasing sputtering time of Sn nanoparticles to 5 min. The photoluminescence (PL) spectra of the SnO(2) nanostructures revealed multipeaks, which are consistent with previous reports except for a new peak at 422 nm. Intensity of six emission peaks increased after depositing graphene buffer layer. Our results indicated that graphene can also be used as buffer layer acting as interface modification to simultaneity improve the field emission and PL properties of SnO(2) nanostructures effectively.

  3. Effect of Electric Field in the Stabilized Premixed Flame on Combustion Process Emissions

    Science.gov (United States)

    Otto, Krickis

    2017-10-01

    The effect of the AC and DC electrical field on combustion processes has been investigated by various researchers. The results of these experiments do not always correlate, due to different experiment conditions and experiment equipment variations. The observed effects of the electrical field impact on the combustion process depends on the applied voltage polarity, flame speed and combustion physics. During the experiment was defined that starting from 1000 V the ionic wind takes the effect on emissions in flue gases, flame shape and combustion instabilities. Simulation combustion process in hermetically sealed chamber with excess oxygen amount 3 % in flue gases showed that the positive effect of electrical field on emissions lies in region from 30 to 400 V. In aforementioned voltage range carbon monoxide emissions were reduced by 6 % and at the same time the nitrogen oxide emissions were increased by 3.5 %.

  4. Water-molecular emission from cavitation bubbles affected by electric fields.

    Science.gov (United States)

    Lee, Hyang-Bok; Choi, Pak-Kon

    2018-04-01

    Orange emission was observed during multibubble sonoluminescence at 1 MHz in water saturated with noble gas. The emission arose in the vicinity of the peeled ground electrode of a piezoceramic transducer exposed to water, suggesting that cavitation bubbles were affected by the electric fields that leaked from the transducer. The spectrum of the emission exhibited a broad component whose intensity increased towards the near-infrared region with peaks at 713 and 813 nm. The spectral shape was independent of the saturation gas of He, Ne, or Kr. The broad component was attributed to the superposition of lines due to vibration-rotation transitions of water molecules, each of which was broadened by the high pressure and electric fields at bubble collapse. An emission mechanism based on charge induction by electric fields and the charged droplet model is proposed. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. Effect of synthesis parameters on morphology of polyaniline (PANI) and field emission investigation of PANI nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Bankar, Prashant K.; More, Mahendra A., E-mail: mam@physics.unipune.ac.in [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune-411007 (India); Patil, Sandip S. [Department of Physics, Modern College of Arts, Science and Commerce, Shivajinagar, Pune-411005. India (India)

    2015-06-24

    Polyaniline (PANI) nanostructures have been synthesized by simple chemical oxidation route at different monomer concentration along with variation in synthesis temperature. The effect of variation of synthesis parameters has been revealed using different characterization techniques. The structural and morphological characterization of the synthesized PANI nanostructures was carried out by scanning electron microscopy (SEM), transmission electron microscopy (TEM), whereas Fourier Transform Infrared spectroscopy (FTIR) has been used to reveal the chemical properties. With the variation in the synthesis temperature and monomer concentration, various morphologies characterized by formation of PANI nanoparticles, nanofibres, nanotubes and nanospheres, are revealed from the SEM analysis. The FTIR analysis reveals the formation of conducting state of PANI under prevailing experimental conditions. The field emission investigation of the conducting PANI nanotubes was performed in all metal UHV system at base pressure of 1x10{sup −8} mbar. The turn on field required to draw emission of 1 nA current was observed to be ∼ 2.2 V/μm and threshold field (corresponding to emission current density of 1 µA/cm2) was found to be 3.2 V/μm. The emission current was observed to be stable for more than three hours at a preset value 1 µA. The simple synthesis route and good field emission characteristics indicate potential of PANI nanofibres as a promising emitter for field emission based micro/nano devices.

  6. Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver.

    Science.gov (United States)

    Shin, Jonghyun; Bhattacharya, Pallab; Yuan, Hao-Chih; Ma, Zhenqiang; Váró, György

    2007-03-01

    A bacteriorhodopsin (bR)-silicon n-channel metal-oxide field-effect transistor (NMOSFET) monolithically integrated photoreceiver is demonstrated. The bR film is selectively formed on an external gate electrode of the transistor by electrophoretic deposition. A modified biasing circuit is incorporated, which helps to match the resistance of the bR film to the input impedance of the NMOSFET and to shift the operating point of the transistor to coincide with the maximum gain. The photoreceiver exhibits a responsivity of 4.7 mA/W.

  7. Micromachined silicon cantilevers with integrated high-frequency magnetoimpedance sensors for simultaneous strain and magnetic field detection

    Science.gov (United States)

    Buettel, G.; Joppich, J.; Hartmann, U.

    2017-12-01

    Giant magnetoimpedance (GMI) measurements in the high-frequency regime utilizing a coplanar waveguide with an integrated Permalloy multilayer and micromachined on a silicon cantilever are reported. The fabrication process is described in detail. The aspect ratio of the magnetic multilayer in the magnetoresistive and magnetostrictive device was varied. Tensile strain and compressive strain were applied. Vector network analyzer measurements in the range from the skin effect to ferromagnetic resonance confirm the technological potential of GMI-based micro-electro-mechanical devices for strain and magnetic field sensing applications. The strain-impedance gauge factor was quantified by finite element strain calculations and reaches a maximum value of almost 200.

  8. Photoinduced Field-Effect Passivation from Negative Carrier Accumulation for High-Efficiency Silicon/Organic Heterojunction Solar Cells.

    Science.gov (United States)

    Liu, Zhaolang; Yang, Zhenhai; Wu, Sudong; Zhu, Juye; Guo, Wei; Sheng, Jiang; Ye, Jichun; Cui, Yi

    2017-12-26

    Carrier recombination and light management of the dopant-free silicon/organic heterojunction solar cells (HSCs) based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) are the critical factors in developing high-efficiency photovoltaic devices. However, the traditional passivation technologies can hardly provide efficient surface passivation on the front surface of Si. In this study, a photoinduced electric field was induced in a bilayer antireflective coating (ARC) of polydimethylsiloxane (PDMS) and titanium oxide (TiO 2 ) films, due to formation of an accumulation layer of negative carriers (O 2 - species) under UV (sunlight) illumination. This photoinduced field not only suppressed the silicon surface recombination but also enhanced the built-in potential of HSCs with 84 mV increment. In addition, this photoactive ARC also displayed the outstanding light-trapping capability. The front PEDOT:PSS/Si HSC with the saturated O 2 - received a champion PCE of 15.51% under AM 1.5 simulated sunlight illumination. It was clearly demonstrated that the photoinduced electric field was a simple, efficient, and low-cost method for the surface passivation and contributed to achieve a high efficiency when applied in the Si/PEDOT:PSS HSCs.

  9. Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission

    KAUST Repository

    Mula, Guido; Printemps, Tony; Licitra, Christophe; Sogne, Elisa; D’ Acapito, Francesco; Gambacorti, Narciso; Sestu, Nicola; Saba, Michele; Pinna, Elisa; Chiriu, Daniele; Ricci, Pier Carlo; Casu, Alberto; Quochi, Francesco; Mura, Andrea; Bongiovanni, Giovanni; Falqui, Andrea

    2017-01-01

    Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For porous Si, the long-standing failure to govern the clustering has been attributed to insufficient knowledge of the several, concomitant and complex processes occurring during the electrochemical Er-doping. We propose here an alternative road to solve the issue: instead of looking for an equilibrium between Er content and light emission using 1-2% Er, we propose to significantly increase the electrochemical doping level to reach the filling the porous silicon pores with luminescent Er-rich material. To better understand the intricate and superposing phenomena of this process, we exploit an original approach based on needle electron tomography, EXAFS and photoluminescence. Needle electron tomography surprisingly shows a heterogeneous distribution of Er content in the silicon thin pores that until now couldn't be revealed by the sole use of scanning electron microscopy compositional mapping. Besides, while showing that pore filling leads to enhanced photoluminescence emission, we demonstrate that the latter is originated from both erbium oxide and silicate. These results give a much deeper understanding of the photoluminescence origin down to nanoscale and could lead to novel approaches focused on noteworthy enhancement of Er-related photoluminescence in porous silicon.

  10. Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission

    KAUST Repository

    Mula, Guido

    2017-07-14

    Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For porous Si, the long-standing failure to govern the clustering has been attributed to insufficient knowledge of the several, concomitant and complex processes occurring during the electrochemical Er-doping. We propose here an alternative road to solve the issue: instead of looking for an equilibrium between Er content and light emission using 1-2% Er, we propose to significantly increase the electrochemical doping level to reach the filling the porous silicon pores with luminescent Er-rich material. To better understand the intricate and superposing phenomena of this process, we exploit an original approach based on needle electron tomography, EXAFS and photoluminescence. Needle electron tomography surprisingly shows a heterogeneous distribution of Er content in the silicon thin pores that until now couldn\\'t be revealed by the sole use of scanning electron microscopy compositional mapping. Besides, while showing that pore filling leads to enhanced photoluminescence emission, we demonstrate that the latter is originated from both erbium oxide and silicate. These results give a much deeper understanding of the photoluminescence origin down to nanoscale and could lead to novel approaches focused on noteworthy enhancement of Er-related photoluminescence in porous silicon.

  11. Electric field distribution and current emission in a miniaturized geometrical diode

    Science.gov (United States)

    Lin, Jinpu; Wong, Patrick Y.; Yang, Penglu; Lau, Y. Y.; Tang, W.; Zhang, Peng

    2017-06-01

    We study the electric field distribution and current emission in a miniaturized geometrical diode. Using Schwarz-Christoffel transformation, we calculate exactly the electric field inside a finite vacuum cathode-anode (A-K) gap with a single trapezoid protrusion on one of the electrode surfaces. It is found that there is a strong field enhancement on both electrodes near the protrusion, when the ratio of the A-K gap distance to the protrusion height d /h spot checked against COMSOL simulations. We calculate the effective field enhancement factor for the field emission current, by integrating the local Fowler-Nordheim current density along the electrode surfaces. We systematically examine the electric field enhancement and the current rectification of the miniaturized geometrical diode for various geometric dimensions and applied electric fields.

  12. Improved field emission from indium decorated multi-walled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Sreekanth, M.; Ghosh, S., E-mail: santanu1@physics.iitd.ernet.in; Biswas, P.; Kumar, S.; Srivastava, P.

    2016-10-15

    Graphical abstract: Improved field emission properties have been achieved for Indium (In) decorated MWCNTs and are shown using the schematic of field emission set up with In/CNT cathode, and a plot of J-E characteristics for pristine and In decorated CNTs. - Highlights: • Field emission (FE) properties have been studied for the first time from Indium (In) decorated MWCNT films. • Observed increased density of states near the Fermi level for In decorated films. • Superior field emission properties have been achieved for In decorated CNT films. - Abstract: Multi-walled carbon nanotube (MWCNT) films were grown using thermal chemical vapor deposition (T-CVD) process and were decorated with indium metal particles by thermal evaporation technique. The In metal particles are found to get oxidized. The In decorated films show 250% enhancement in the FE current density, lower turn-on and threshold fields, and better temporal stability as compared to their undecorated counterpart. This improvement in field emission properties is primarily attributed to increased density of states near the Fermi level. The presence of O 2p states along with a small contribution from In 5s states results in the enhancement of density of states in the vicinity of the Fermi level.

  13. Field penetration induced charge redistribution effects on the field emission properties of carbon nanotubes - a first-principle study

    International Nuclear Information System (INIS)

    Chen, C.-W.; Lee, M.-H.; Clark, S.J.

    2004-01-01

    The effect of field penetration induced charge redistribution on the field emission properties of carbon nanotubes (CNTs) have been studied by the first-principle calculations. It is found that the carbon nanotube becomes polarized under external electric field leading to a charge redistribution. The resulting band bending induced by field penetration into the nanotube tip surface can further reduce the effective workfunction of the carbon nanotubes. The magnitude of the redistributed charge ΔQ is found to be nearly linear to the applied external field strength. In addition, we found that the capped (9, 0) zigzag nanotube demonstrates better field emission properties than the capped (5, 5) armchair nanotube due to the fact that the charge redistribution of π electrons along the zigzag-like tube axis is easier than for the armchair-like tube. The density of states (DOS) of the capped region of the nanotube is found to be enhanced with a value 30% higher than that of the sidewall part for the capped (5, 5) nanotube and 40% for the capped (9, 0) nanotube under an electric field of 0.33 V/A. Such enhancements of the DOS at the carbon nanotube tip show that electrons near the Fermi level will emit more easily due to the change of the surface band structure resulting from the field penetration in a high field

  14. Enhanced field emission of ZnO nanoneedle arrays via solution etching at room temperature

    DEFF Research Database (Denmark)

    Ma, Huanming; Qin, Zhiwei; Wang, Zaide

    2017-01-01

    ZnO nanoneedle arrays (ZnO nns) were synthesized by a facile two-step solution-phase method based on the etching of pre-synthesized ZnO nanowire arrays (ZnO nws) with flat ends at room temperature. Field emission measurement results showed that the turn-on electronic fields of ZnO nns and nws wer...

  15. Field emission from individual multiwalled carbon nanotubes prepared in an electron microscope

    NARCIS (Netherlands)

    de Jonge, N.; van Druten, N.J.

    2003-01-01

    Individual multiwalled carbon nanotube field emitters were prepared in a scanning electron microscope. The angular current density, energy spectra, and the emission stability of the field-emitted electrons were measured. An estimate of the electron source brightness was extracted from the

  16. Relative work function of clean molybdenum single-crystal planes determined by field emission microscopy

    International Nuclear Information System (INIS)

    Bergeret, G.; Abon, M.; Tardy, B.; Teichner, S.J.

    1974-01-01

    A probe-hole field emission microscope was used to determine the work function of clean molybdenum single crystal planes relative to the average work function of the field emitter, assumed to be 4.20 eV. Results are compared with other available data

  17. Onset of Coulomb explosion in small silicon clusters exposed to strong-field laser pulses

    Science.gov (United States)

    Sayres, S. G.; Ross, M. W.; Castleman, A. W., Jr.

    2012-05-01

    It is now well established that, under intense laser illumination, clusters undergo enhanced ionization compared to their isolated atomic and molecular counterparts being subjected to the same pulses. This leads to extremely high charge states and concomitant Coulomb explosion. Until now, the cluster size necessary for ionization enhancement has not been quantified. Here, we demonstrate that through the comparison of ion signal from small covalently bound silicon clusters exposed to low intensity laser pulses with semi-classical theory, their ionization potentials (IPs) can be determined. At moderate laser intensities the clusters are not only atomized, but all valence electrons are removed from the cluster, thereby producing up to Si4+. The effective IPs for the production of the high charge states are shown to be ˜40% lower than the expected values for atomic silicon. Finally, the minimum cluster size responsible for the onset of the enhanced ionization is determined utilizing the magnitude of the kinetic energy released from the Coulomb explosion.

  18. A novel field measurement method for determining fine particle and gas emissions from residential wood combustion

    Science.gov (United States)

    Tissari, Jarkko; Hytönen, Kati; Lyyränen, Jussi; Jokiniemi, Jorma

    Emission data from residential wood combustion are usually obtained on test stands in the laboratory but these measurements do not correspond to the operational conditions in the field because of the technological boundary conditions (e.g. testing protocol, environmental and draught conditions). The field measurements take into account the habitual practice of the operators and provide the more reliable results needed for emission inventories. In this study, a workable and compact method for measuring emissions from residential wood combustion in winter conditions was developed. The emissions for fine particle, gaseous and PAH compounds as well as particle composition in real operational conditions were measured from seven different appliances. The measurement technique worked well and was evidently suitable for winter conditions. It was easy and fast to use, and no construction scaffold was needed. The dilution of the sample with the combination of a porous tube diluter and an ejector diluter was well suited to field measurement. The results indicate that the emissions of total volatile organic carbon (TVOC) (17 g kg -1 (of dry wood burned)), carbon monoxide (CO) (120 g kg -1) and fine particle mass (PM 1) (2.7 g kg -1) from the sauna stove were higher than in the other measured appliances. In the masonry heaters, baking oven and stove, the emissions were 2.9-9 g kg -1 TVOC, 28-68 g kg -1 CO and 0.6-1.6 g kg -1 PM 1. The emission of 12 PAHs (PAH 12) from the sauna stove was 164 mg kg -1 and consisted mainly of PAHs with four benzene rings in their structure. PAH 12 emission from other appliances was, on average, 21 mg kg -1 and was dominated by 2-ring PAHs. These results indicate that despite the non-optimal operational practices in the field, the emissions did not differ markedly from the laboratory measurements.

  19. Analysis of the effective thermoelastic properties and stress fields in silicon nitride based on EBSD data

    Czech Academy of Sciences Publication Activity Database

    Othmani, Y.; Böhlke, T.; Lube, T.; Fellmeth, A.; Chlup, Zdeněk; Colonna, F.; Hashibon, A.

    2016-01-01

    Roč. 36, č. 5 (2016), s. 1109-1125 ISSN 0955-2219 R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068 EU Projects: European Commission(XE) 263476 Institutional support: RVO:68081723 Keywords : Silicon nitride * EBSD data * Hashin-Shtrikman bounds * Finite element analysis Subject RIV: JH - Ceramic s, Fire-Resistant Materials and Glass Impact factor: 3.411, year: 2016

  20. Study of Thermal-Field Emission Properties and Investigation of Temperature dependent Noise in the Emission Current form vertical Carbon nanotube emitters

    KAUST Repository

    Kolekar, Sadhu

    2017-05-05

    We have investigated temperature dependent field electron emission characteristics of vertical carbon nanotubes (CNTs). The generalized expression for electron emission from well defined cathode surface is given by Millikan and Lauritsen [1] for the combination of temperature and electric field effect. The same expression has been used to explain the electron emission characteristics from vertical CNT emitters. Furthermore, this has been applied to explain the electron emission for different temperatures ranging from room temperature to 1500 K. The real-time field electron emission images at room temperature and 1500 K are recorded by using Charge Coupled Device (CCD), in order to understand the effect of temperature on electron emission spots in image morphology (as indicated by ring like structures) and electron emission spot intensity of the emitters. Moreover, the field electron emission images can be used to calculate the total number of emitters per cm2 for electron emission. The calculated number of emitters per cm2 is 4.5x107 and, the actual number emitters per cm2 present for electron emission calculated from Atomic Force Microscopy (AFM) data is 1.2x1012. The measured Current-Voltage (I-V) characteristics obey the Folwer-Nordheim (F-N) type behavior. The fluctuations in the emission current are recorded at different temperatures and, temperature dependence of power spectral density obeys power law relation s(f)=I2/f2 with that of emission current and frequency.

  1. Developing Automatic Water Table Control System for Reducing Greenhouse Gas Emissions from Paddy Fields

    Science.gov (United States)

    Arif, C.; Fauzan, M. I.; Satyanto, K. S.; Budi, I. S.; Masaru, M.

    2018-05-01

    Water table in rice fields play important role to mitigate greenhouse gas (GHG) emissions from paddy fields. Continuous flooding by maintenance water table 2-5 cm above soil surface is not effective and release more GHG emissions. System of Rice Intensification (SRI) as alternative rice farming apply intermittent irrigation by maintaining lower water table is proven can reduce GHG emissions reducing productivity significantly. The objectives of this study were to develop automatic water table control system for SRI application and then evaluate the performances. The control system was developed based on fuzzy logic algorithms using the mini PC of Raspberry Pi. Based on laboratory and field tests, the developed system was working well as indicated by lower MAPE (mean absolute percentage error) values. MAPE values for simulation and field tests were 16.88% and 15.80%, respectively. This system can save irrigation water up to 42.54% without reducing productivity significantly when compared to manual irrigation systems.

  2. Emission Characteristics of Gas-Fired Boilers based on Category-Specific Emission Factor from Field Measurements in Beijing, China

    Science.gov (United States)

    Itahashi, S.; Yan, X.; Song, G.; Yan, J.; Xue, Y.

    2017-12-01

    Gas-fired boilers will become the main stationary sources of NOx in Beijing. However, the knowledge of gas-fired boilers in Beijing is limited. In the present study, the emission characteristics of NOx, SO2, and CO from gas-fired boilers in Beijing were established using category-specific emission factors (EFs) from field measurements. In order to obtain category-specific EFs, boilers were classified through influence analysis. Factors such as combustion mode, boiler type, and installed capacity were considered critical for establishing EFs because they play significant roles in pollutant formation. The EFs for NOx, CO, and SO2 ranged from 1.42-6.86 g m-3, 0.05-0.67 g m-3 and 0.03-0.48 g m-3. The emissions of NOx, SO2, and CO for gas-fired boilers in Beijing were 11121 t, 468 t, and 222 t in 2014, respectively. The emissions were spatially allocated into grid cells with a resolution of 1 km × 1 km, and the results indicated that top emitters were in central Beijing. The uncertainties were quantified using a Monte Carlo simulation. The results indicated high uncertainties in CO (-157% to 154%) and SO2 (-127% to 182%) emissions, and relatively low uncertainties (-34% to 34%) in NOx emission. Furthermore, approximately 61.2% and 96.8% of the monitored chamber combustion boilers (CCBs) met the standard limits for NOx and SO2, respectively. Concerning NOx, low-NOx burners and NOx emission control measures are urgently needed for implementing of stricter standards. Adopting terminal control measures is unnecessary for SO2, although its concentration occasionally exceeds standard limits, because reduction of its concentration can be achieved thorough control of the sulfur content of natural gas at a stable low level. Furthermore, the atmospheric combustion boilers (ACBs) should be substituted with CCBs, because ACBs have a higher emission despite lower gross installed capacity. The results of this study will enable in understanding and controlling emissions from gas

  3. Water-processed carbon nanotube/graphene hybrids with enhanced field emission properties

    International Nuclear Information System (INIS)

    Song, Meng; Xu, Peng; Wang, Xu; Wu, Huizhen; Wang, Miao; Song, Yenan; Li, Zhenhua; Zhao, Pei; Shang, Xuefu

    2015-01-01

    Integrating carbon nanotubes (CNTs) and graphene into hybrid structures provides a novel approach to three dimensional (3D) materials with advantageous properties. Here we present a water-processing method to create integrated CNT/graphene hybrids and test their field emission properties. With an optimized mass ratio of CNTs to graphene, the hybrid shows a significantly enhanced field emission performance, such as turn-on electric field of 0.79 V/μm, threshold electric field of 1.05 V/μm, maximum current density of 0.1 mA/cm 2 , and field enhancement factor of ∼1.3 × 10 4 . The optimized mass ratio for field emission emphasizes the importance of both CNTs and graphene in the hybrid. We also hypothesize a possible mechanism for this enhanced field emission performance from the CNT/graphene hybrid. During the solution treatment, graphene oxide behaves as surfactant sheets for CNTs to form a well dispersed solution, which leads to a better organized 3D structure with more conducting channels for electron transport

  4. Water-processed carbon nanotube/graphene hybrids with enhanced field emission properties

    Energy Technology Data Exchange (ETDEWEB)

    Song, Meng; Xu, Peng; Wang, Xu; Wu, Huizhen; Wang, Miao, E-mail: peizhao@zju.edu.cn, E-mail: miaowang@css.zju.edu.cn [Department of Physics, Zhejiang University, Hangzhou 310027 (China); Song, Yenan; Li, Zhenhua; Zhao, Pei, E-mail: peizhao@zju.edu.cn, E-mail: miaowang@css.zju.edu.cn [Institute of Applied Mechanics, Zhejiang University, Hangzhou 310027 (China); Shang, Xuefu [Department of Physics, Faculty of Science, Jiangsu University, Zhenjiang 212013 (China)

    2015-09-15

    Integrating carbon nanotubes (CNTs) and graphene into hybrid structures provides a novel approach to three dimensional (3D) materials with advantageous properties. Here we present a water-processing method to create integrated CNT/graphene hybrids and test their field emission properties. With an optimized mass ratio of CNTs to graphene, the hybrid shows a significantly enhanced field emission performance, such as turn-on electric field of 0.79 V/μm, threshold electric field of 1.05 V/μm, maximum current density of 0.1 mA/cm{sup 2}, and field enhancement factor of ∼1.3 × 10{sup 4}. The optimized mass ratio for field emission emphasizes the importance of both CNTs and graphene in the hybrid. We also hypothesize a possible mechanism for this enhanced field emission performance from the CNT/graphene hybrid. During the solution treatment, graphene oxide behaves as surfactant sheets for CNTs to form a well dispersed solution, which leads to a better organized 3D structure with more conducting channels for electron transport.

  5. Excellent field emission properties of vertically oriented CuO nanowire films

    Directory of Open Access Journals (Sweden)

    Long Feng

    2018-04-01

    Full Text Available Oriented CuO nanowire films were synthesized on a large scale using simple method of direct heating copper grids in air. The field emission properties of the sample can be enhanced by improving the aspect ratio of the nanowires just through a facile method of controlling the synthesis conditions. Although the density of the nanowires is large enough, the screen effect is not an important factor in this field emission process because few nanowires sticking out above the rest. Benefiting from the unique geometrical and structural features, the CuO nanowire samples show excellent field emission (FE properties. The FE measurements of CuO nanowire films illustrate that the sample synthesized at 500 °C for 8 h has a comparatively low turn-on field of 0.68 V/μm, a low threshold field of 1.1 V/μm, and a large field enhancement factor β of 16782 (a record high value for CuO nanostructures, to the best of our knowledge, indicating that the samples are promising candidates for field emission applications.

  6. Low Emittance Gun Project based on Field Emission

    CERN Document Server

    Ganter, Romain; Dehler, M; Gobrecht, Jens; Gough, Chris; Ingold, Gerhard; Leemann, Simon C; Shing-Bruce-Li, Kevin; Paraliev, Martin; Pedrozzi, Marco; Raguin, Jean Yves; Rivkin, Leonid; Schlott, Volker; Sehr, Harald; Streun, Andreas; Wrulich, Albin F; Zelenika, Sasa

    2004-01-01

    The design of an electron gun capable of producing beam emittance one order of magnitude lower than current technology would reduce considerably the cost and size of a free electron laser emitting at 0.1nm. Field emitter arrays (FEAs) including a gate and a focusing layer are an attractive technology for such high brightness sources. Electrons are extracted from micrometric tips thanks to voltage pulses between gate and tips. The focusing layer should then reduce the initial divergence of each emitted beamlets. This FEA will be inserted in a high gradient diode configuration coupled with a radiofrequency structure. In the diode part very high electric field pulses (several hundreds of MV/m) will limit the degradation of emittance due to space charge effect. This first acceleration will be obtained with high voltage pulses (typically a megavolt in a few hundred of nanoseconds) synchronized with the low voltage pulses applied to the FEA (typically one hundred of volts in one nanosecond at frequency below kilohe...

  7. Enhanced field emission properties of vertically aligned double-walled carbon nanotube arrays

    International Nuclear Information System (INIS)

    Chen, Guohai; Shin, Dong Hoon; Lee, Cheol Jin; Iwasaki, Takayuki; Kawarada, Hiroshi

    2008-01-01

    Vertically aligned double-walled carbon nanotube (VA-DWCNT) arrays were synthesized by point-arc microwave plasma chemical vapor deposition on Cr/n-Si and SiO 2 /n-Si substrates. The outer tube diameters of VA-DWCNTs are in the range of 2.5-3.8 nm, and the average interlayer spacing is approximately 0.42 nm. The field emission properties of these VA-DWCNTs were studied. It was found that a VA-DWCNT array grown on a Cr/n-Si substrate had better field emission properties as compared with a VA-DWCNT array grown on a SiO 2 /n-Si substrate and randomly oriented DWCNTs, showing a turn-on field of about 0.85 V μm -1 at the emission current density of 0.1 μA cm -2 and a threshold field of 1.67 V μm -1 at the emission current density of 1.0 mA cm -2 . The better field emission performance of the VA-DWCNT array was mainly attributed to the vertical alignment of DWCNTs on the Cr/n-Si substrate and the low contact resistance between CNTs and the Cr/n-Si substrate

  8. Emitter spacing effects on field emission properties of laser-treated single-walled carbon nanotube buckypapers

    Energy Technology Data Exchange (ETDEWEB)

    Chen Yiwen; Miao, Hsin-Yuan; Zhang Mei; Liang, Richard; Zhang, Chuck; Wang, Ben [High-Performance Materials Institute, Florida State University, Tallahassee, FL 32310 (United States); Lin, Ryan Jiyao, E-mail: kenymiao@thu.edu.tw, E-mail: mzhang@eng.fsu.edu [Department of Electrical and Computer Engineering, Rose-Hulman Institute of Technology, Terre Haute, IN 47803 (United States)

    2010-12-10

    Carbon nanotube (CNT) emitters on buckypaper were activated by laser treatment and their field emission properties were investigated. The pristine buckypapers and CNT emitters' height, diameter, and spacing were characterized through optical analysis. The emitter spacing directly impacted the emission results when the laser power and treatment times were fixed. The increasing emitter density increased the enhanced field emission current and luminance. However, a continuous and excessive increase of emitter density with spacing reduction generated the screening effect. As a result, the extended screening effect from the smaller spacing eventually crippled the field emission effectiveness. Luminance intensity and uniformity of field emission suggest that the highly effective buckypaper will have a density of 2500 emission spots cm{sup -2}, which presents an effective field enhancement factor of 3721 and a moderated screening effect of 0.005. Proper laser treatment is an effective post-treatment process for optimizing field emission, luminance, and durability performance for buckypaper cold cathodes.

  9. Field emission studies of silver nanoparticles synthesized by electron cyclotron resonance plasma

    International Nuclear Information System (INIS)

    Purohit, Vishwas; Mazumder, Baishakhi; Bhise, A.B.; Poddar, Pankaj; Joag, D.S.; Bhoraskar, S.V.

    2011-01-01

    Field emission has been studied for silver nanoparticles (25-200 nm), deposited within a cylindrical silver target in an electron cyclotron resonance (ECR) plasma. Particle size distribution was controlled by optimum biasing voltages between the chamber and the target. Presence of non-oxidized silver was confirmed from the X-Ray diffraction analysis; however, thin protective layer of oxide was identified from the selective area electron diffraction pattern obtained with transmission electron microscopy. The silver nanoparticles were seen to exhibit hilly pointed like structures when viewed under the atomic force microscopy (AFM). The emissive properties of these particles were investigated by field emission microscopy. It is found that this technique of deposition is ideal for formation of nanoparticles films on different substrate geometries with size controllability as well as its application to emission devices.

  10. Investigation of voltages and electric fields in silicon semi 3D radiation detectors using Silvaco/ATLAS simulation tool and a scanning electron microscope

    CERN Document Server

    Palviainen, T; Tuuva, T; Eranen, S; Härkönen, J; Luukka, P; Tuovinen, E

    2006-01-01

    The structure of silicon semi three-dimensional radiation detector is simulated on purpose to find out its electrical characteristics such as the depletion voltage and electric field. Two-dimensional simulation results are compared to voltage and electric field measurements done by a scanning electron microscope.

  11. On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

    OpenAIRE

    Aceves-Mijares, M.; González-Fernández, A. A.; López-Estopier, R.; Luna-López, A.; Berman-Mendoza, D.; Morales, A.; Falcony, C.; Domínguez, C.; Murphy-Arteaga, R.

    2012-01-01

    Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented. The experimental results lead us to accept th...

  12. Modification of C60/C70+Pd film structure under electric field influence during electron emission

    International Nuclear Information System (INIS)

    Czerwosz, E.; Dluzewski, P.; Kozlowski, M.

    2001-01-01

    We investigated the modification of structure of C 60 /C 70 +Pd films during cold electron emission from these films. Films were obtained by vacuum thermal deposition from two sources and were characterised before and after electron emission measurements by transmission electron microscopy and electron diffraction. Films were composed of nanocrystalline Pd objects dispersed in carbon/fullerenes matrix. I-V characteristics for electron emission were obtained in diode geometry with additionally applied voltage along the film surface. The modification of film structure occurred under applied electric field and the grouping of Pd nano crystals into bigger objects was observed

  13. Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon

    Directory of Open Access Journals (Sweden)

    Brian K. Tanner

    2017-11-01

    Full Text Available The crack geometry and associated strain field around Berkovich and Vickers indents on silicon have been studied by X-ray diffraction imaging and micro-Raman spectroscopy scanning. The techniques are complementary; the Raman data come from within a few micrometres of the indentation, whereas the X-ray image probes the strain field at a distance of typically tens of micrometres. For example, Raman data provide an explanation for the central contrast feature in the X-ray images of an indent. Strain relaxation from breakout and high temperature annealing are examined and it is demonstrated that millimetre length cracks, similar to those produced by mechanical damage from misaligned handling tools, can be generated in a controlled fashion by indentation within 75 micrometres of the bevel edge of 200 mm diameter wafers.

  14. High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor.

    Science.gov (United States)

    Al-Hardan, Naif H; Abdul Hamid, Muhammad Azmi; Ahmed, Naser M; Jalar, Azman; Shamsudin, Roslinda; Othman, Norinsan Kamil; Kar Keng, Lim; Chiu, Weesiong; Al-Rawi, Hamzah N

    2016-06-07

    In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

  15. A high voltage pulse generator based on silicon-controlled rectifier for field-reversed configuration experiment.

    Science.gov (United States)

    Lin, Munan; Liu, Ming; Zhu, Guanghui; Wang, Yanpeng; Shi, Peiyun; Sun, Xuan

    2017-08-01

    A high voltage pulse generator based on a silicon-controlled rectifier has been designed and implemented for a field reversed configuration experiment. A critical damping circuit is used in the generator to produce the desired pulse waveform. Depending on the load, the rise time of the output trigger signal can be less than 1 μs, and the peak amplitudes of trigger voltage and current are up to 8 kV and 85 A in a single output. The output voltage can be easily adjusted by changing the voltage on a capacitor of the generator. In addition, the generator integrates an electrically floating heater circuit so it is capable of triggering either pseudosparks (TDI-type hydrogen thyratron) or ignitrons. Details of the circuits and their implementation are described in the paper. The trigger generator has successfully controlled the discharging sequence of the pulsed power supply for a field reversed configuration experiment.

  16. High Sensitivity pH Sensor Based on Porous Silicon (PSi Extended Gate Field-Effect Transistor

    Directory of Open Access Journals (Sweden)

    Naif H. Al-Hardan

    2016-06-01

    Full Text Available In this study, porous silicon (PSi was prepared and tested as an extended gate field-effect transistor (EGFET for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

  17. Field Performance versus Standard Test Condition Efficiency of Tandem Solar Cells and the Specific Case of Perovskites/Silicon Devices

    KAUST Repository

    Dupre, Olivier

    2018-01-05

    Multijunction cells may offer a cost-effective route to boost the efficiency of industrial photovoltaics. For any technology to be deployed in the field, its performance under actual operating conditions is extremely important. In this perspective, we evaluate the impact of spectrum, light intensity, and module temperature variations on the efficiency of tandem devices with crystalline silicon bottom cells with a particular focus on perovskite top cells. We consider devices with different efficiencies and calculate their energy yields using field data from Denver. We find that annual losses due to differences between operating conditions and standard test conditions are similar for single-junction and four-terminal tandem devices. The additional loss for the two-terminal tandem configuration caused by current mismatch reduces its performance ratio by only 1.7% when an optimal top cell bandgap is used. Additionally, the unusual bandgap temperature dependence of perovskites is shown to have a positive, compensating effect on current mismatch.

  18. Nanometer-scale discernment of field emission from tungsten surface with single carbon monoxide molecule

    Science.gov (United States)

    Matsunaga, Soichiro; Suwa, Yuji; Katagiri, Souichi

    2017-12-01

    Unusual quantized beam fluctuations were found in the emission current from a cold-field emitter (CFE) operating in an extremely high vacuum of 10-10 Pa. To clarify the microscopic mechanism behind these fluctuations, we developed a new calculation method to evaluate the field emission from a heterogeneous surface under a strong electric field of 4 × 109 V/m by using the local potential distribution obtained by a first-principles calculation, instead of by using the work function. As a result of the first-principles calculations of a single molecule adsorbed on a tungsten surface, we found that dissociative adsorption of a carbon monoxide (CO) molecule enhances the emission current by changing the potential barrier in the area surrounding the C and O adatoms when these two atoms are placed at their most stable positions. It is also found that the migration of the O atom from the most stable position reduces the emission current. These types of enhancement and reduction of the emission current quantitatively explain the observed quantized fluctuations of the CFE emission current.

  19. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  20. Field emission from ZnS nanorods synthesized by radio frequency magnetron sputtering technique

    Science.gov (United States)

    Ghosh, P. K.; Maiti, U. N.; Jana, S.; Chattopadhyay, K. K.

    2006-11-01

    The field emission property of zinc sulphides nanorods synthesized in the thin film form on Si substrates has been studied. It is seen that ZnS nanorod thin films showed good field emission properties with a low-macroscopic turn-on field (2.9-6.3 V/μm). ZnS nanorods were synthesized by using radio frequency magnetron sputtering of a polycrystalline prefabricated ZnS target at a relatively higher pressure (10 -1 mbar) and at a lower substrate temperature (233-273 K) without using any catalyst. Transmission electron microscopic image showed the formation of ZnS nanorods with high aspect ratio (>60). The field emission data were analysed using Fowler-Nordhiem theory and the nearly straight-line nature of the F-N plots confirmed cold field emission of electrons. It was also found that the turn-on field decreased with the decrease of nanorod's diameters. The optical properties of the ZnS nanorods were also studied. From the measurements of transmittance of the films deposited on glass substrates, the direct allowed bandgap values have been calculated and they were in the range 3.83-4.03 eV. The thickness of the films was ˜600 nm.

  1. Field emission and high voltage cleaning of particulate contaminants on extended metallic surfaces

    International Nuclear Information System (INIS)

    Tan, J.; Bonin, B.; Safa, H.

    1996-01-01

    The vacuum insulation properties of extended metallic surfaces depends strongly on their cleanliness. The usual technique to reduce electronic field emission from such surfaces consists in exposing them to very high electric fields during limited periods of time. This kind of processing also reduces the occurrence of vacuum breakdown. The processing of the surface is generally believed to be due to a thermomechanical destruction of the emitting sites, initiated by the emission itself. Comparison of the electric forces vs adherence forces which act on dust particles lying on the surface shows that the processing could also be due simply to the mechanical removal of the dust particles, with a subsequent reduction of field emission from the contaminated surface. (author)

  2. Synthesis, property and field-emission behaviour of amorphous polypyrrole nanowires

    International Nuclear Information System (INIS)

    Yan Hongliang; Zhang Lan; Shen Jiaoyan; Chen Zhaojia; Shi Gaoquan; Zhang Binglin

    2006-01-01

    Polypyrrole nanowires have been electrosynthesized by direct oxidation of 0.1 mol l -1 pyrrole in a medium of 75% isopropyl alcohol + 20% boron trifluoride diethyl etherate + 5% poly (ethylene glycol) (by volume) using porous alumina membranes as the templates. The as-prepared nanowires had a smooth surface and uniform diameter and were arranged in an orderly manner in a high density. The conductivity of a single nanowire was measured by the four-electrode technique to be 23.4 S cm -1 at room temperature. The field emission devices based on the nanowire array were fabricated and their operations were explored. The experimental results indicated that the field emission characteristics of the devices fitted well to the Fowler-Nordheim model of emission. The turn-on electric field was only 1.2 V μm -1 and the current density reached 200 μA cm -2 at 2.6 V μm -1

  3. Structural origination of charge transfer complex nanostructures: Excellent candidate for field emission

    International Nuclear Information System (INIS)

    Pal, Shreyasi; Chattopadhyay, Kalyan Kumar

    2016-01-01

    Worldwide strategies for amalgamating rationally controlled one-dimensional organic nanowires are of fundamental importance for their applications in flexible, cheaper and lighter electronics. In this work we have fabricated large-area, ordered CuTCNQ (copper-7,7,8,8-tetracyanoquinodimethane) nano architecture arrays over flexible conducting substrate and discussed the rational growth and integration of nanostructures. Here we adopted the organic solid phase reaction (VLS) technique for the growth of organic hierarchies and investigated how field emission properties changes by tuning the nanostructures morphology i.e., by varying length, diameter, alignment and orientation over flexible substrate. The CuTCNQ nanowires with optimized geometry exhibit excellent high field emission performance with low turn-on and threshold field values. The result strongly indicate that CuTCNQ nanowires on flexible carbon cloth substrate are promising candidates for constructing cold cathode based emission display devices, vacuum nanoelectronics, and etc.

  4. Structural origination of charge transfer complex nanostructures: Excellent candidate for field emission

    Energy Technology Data Exchange (ETDEWEB)

    Pal, Shreyasi; Chattopadhyay, Kalyan Kumar [Thin Films and Nanoscience Laboratory, Department of Physics, Jadavpur University, Kolkata 700032 (India)

    2016-05-23

    Worldwide strategies for amalgamating rationally controlled one-dimensional organic nanowires are of fundamental importance for their applications in flexible, cheaper and lighter electronics. In this work we have fabricated large-area, ordered CuTCNQ (copper-7,7,8,8-tetracyanoquinodimethane) nano architecture arrays over flexible conducting substrate and discussed the rational growth and integration of nanostructures. Here we adopted the organic solid phase reaction (VLS) technique for the growth of organic hierarchies and investigated how field emission properties changes by tuning the nanostructures morphology i.e., by varying length, diameter, alignment and orientation over flexible substrate. The CuTCNQ nanowires with optimized geometry exhibit excellent high field emission performance with low turn-on and threshold field values. The result strongly indicate that CuTCNQ nanowires on flexible carbon cloth substrate are promising candidates for constructing cold cathode based emission display devices, vacuum nanoelectronics, and etc.

  5. Initiation of vacuum breakdown and failure mechanism of the carbon nanotube during thermal field emission

    Science.gov (United States)

    Dan, Cai; Lie, Liu; Jin-Chuan, Ju; Xue-Long, Zhao; Hong-Yu, Zhou; Xiao, Wang

    2016-04-01

    The carbon nanotube (CNT)-based materials can be used as vacuum device cathodes. Owing to the excellent field emission properties of CNT, it has great potentials in the applications of an explosive field emission cathode. The falling off of CNT from the substrate, which frequently appears in experiments, restricts its application. In addition, the onset time of vacuum breakdown limits the performance of the high-power explosive-emission-cathode-based diode. In this paper, the characteristics of the CNT, electric field strength, contact resistance and the kind of substrate material are varied to study the parameter effects on the onset time of vacuum breakdown and failure mechanism of the CNT by using the finite element method. Project supported by the National Natural Science Foundation of China (Grant Nos. 11305263 and 61401484).

  6. Numerical modelling of surface waves generated by low frequency electromagnetic field for silicon refinement process

    Science.gov (United States)

    Geža, V.; Venčels, J.; Zāģeris, Ģ.; Pavlovs, S.

    2018-05-01

    One of the most perspective methods to produce SoG-Si is refinement via metallurgical route. The most critical part of this route is refinement from boron and phosphorus, therefore, approach under development will address this problem. An approach of creating surface waves on silicon melt’s surface is proposed in order to enlarge its area and accelerate removal of boron via chemical reactions and evaporation of phosphorus. A two dimensional numerical model is created which include coupling of electromagnetic and fluid dynamic simulations with free surface dynamics. First results show behaviour similar to experimental results from literature.

  7. Degradation patterns of silicone-based dielectric elastomers in electrical fields

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Skov, Anne Ladegaard

    2017-01-01

    . This shortcoming has been attempted optimized through different approaches during recent years. Material optimization with the sole purpose of increasing the dielectric permittivity may lead to the introduction of problematic phenomena such as premature electrical breakdown due to high leakage currents of the thin...... elastomer film. Within this work, electrical breakdown phenomena of various types of permittivity-enhanced silicone elastomers are investigated. Results showed that different types of polymer backbone chemistries lead to differences in electrical breakdown patterns, which were revealed through SEM imaging...

  8. A Silicon Hadron Calorimeter Module Operated in a Strong Magnetic Field with VLSI Readout for LHC

    CERN Multimedia

    2002-01-01

    % RD35 \\\\ \\\\ On the basis of a cost optimized Silicon production technology we proposed to build a hadron calorimeter active plane. \\\\ \\\\The production of detectors is closely followed and final quality control is performed according to specifications. \\\\ \\\\The technology designed for the cheap pad detector production is applied for the coarse strip detector manufacturing. These strip detectors will be used in the preshower of the electromagnetic calorimeter of CMS. \\footnote{Research & Prod. Assoc. ELMA, RSFSR} \\footnote{Byelorussian State Univ. Minsk} \\footnote{Research & Prod. Comp. SIAPS, RSFSR} \\footnote{Joffe Physical-Technical Inst. RSFSR} \\footnote{Ansaldo Richerche spa, Genoa} \\footnote{SGS-THOMSON, Castelletto, Milan}

  9. Experimental and theoretical study on field emission properties of zinc oxide nanoparticles decorated carbon nanotubes

    Science.gov (United States)

    Li, Xin; Zhou, Wei-Man; Liu, Wei-Hua; Wang, Xiao-Li

    2015-05-01

    Field emission properties of zinc oxide (ZnO) nanoparticles (NPs) decorated carbon nanotubes (CNTs) are investigated experimentally and theoretically. CNTs are in situ decorated with ZnO NPs during the growth process by chemical vapor deposition using a carbon source from the iron phthalocyanine pyrolysis. The experimental field emission test shows that the ZnO NP decoration significantly improves the emission current from 50 μA to 275 μA at 550 V and the reduced threshold voltage from 450 V to 350 V. The field emission mechanism of ZnO NPs on CNTs is theoretically studied by the density functional theory (DFT) combined with the Penn-Plummer method. The ZnO NPs reconstruct the ZnO-CNT structure and pull down the surface barrier of the entire emitter system to 0.49 eV so as to reduce the threshold electric field. The simulation results suggest that the presence of ZnO NPs would increase the LDOS near the Fermi level and increase the emission current. The calculation results are consistent with the experiment results. Project supported by the National Natural Science Foundation of China (Grant Nos. 91123018, 61172040, and 61172041) and the Natural Science Foundation of Shaanxi Province, China (Grant No. 2014JM7277).

  10. Experimental and theoretical study on field emission properties of zinc oxide nanoparticles decorated carbon nanotubes

    International Nuclear Information System (INIS)

    Li Xin; Zhou Wei-Man; Liu Wei-Hua; Wang Xiao-Li

    2015-01-01

    Field emission properties of zinc oxide (ZnO) nanoparticles (NPs) decorated carbon nanotubes (CNTs) are investigated experimentally and theoretically. CNTs are in situ decorated with ZnO NPs during the growth process by chemical vapor deposition using a carbon source from the iron phthalocyanine pyrolysis. The experimental field emission test shows that the ZnO NP decoration significantly improves the emission current from 50 μA to 275 μA at 550 V and the reduced threshold voltage from 450 V to 350 V. The field emission mechanism of ZnO NPs on CNTs is theoretically studied by the density functional theory (DFT) combined with the Penn–Plummer method. The ZnO NPs reconstruct the ZnO–CNT structure and pull down the surface barrier of the entire emitter system to 0.49 eV so as to reduce the threshold electric field. The simulation results suggest that the presence of ZnO NPs would increase the LDOS near the Fermi level and increase the emission current. The calculation results are consistent with the experiment results. (paper)

  11. Optical and field emission properties of layer-structure GaN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Zhen [Science School, Xi’an University of Technology, Xi’an 710048 (China); School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048 (China); Li, Enling, E-mail: Lienling@xaut.edu.cn [Science School, Xi’an University of Technology, Xi’an 710048 (China); Shi, Wei; Ma, Deming [Science School, Xi’an University of Technology, Xi’an 710048 (China)

    2014-08-15

    Highlights: • The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method. • The diameter of the layer-structure GaN nanowire gradually decreases from ∼500 nm to ∼200 nm along the wire axis. • The layer-structure GaN nanowire film possesses good field emission property. - Abstract: A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (1 1 1) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.

  12. Comparative field evaluation of vehicle cruise speed and acceleration level impacts on hot stabilized emissions

    International Nuclear Information System (INIS)

    El-Shawarby, Ihab; Ahn, Kyoungho; Rakha, Hesham

    2005-01-01

    The main objectives of this paper are two fold. First, the paper evaluates the impact of vehicle cruise speed and acceleration levels on vehicle fuel-consumption and emission rates using field data gathered under real-world driving conditions. Second, it validates the VT-Micro model for the modeling of real-world conditions. Specifically, an on-board emission-measurement device was used to collect emissions of oxides of nitrogen, hydrocarbons, carbon monoxide, and carbon dioxide using a light-duty test vehicle. The analysis demonstrates that vehicle fuel-consumption and emission rates per-unit distance are optimum in the range of 60-90 km/h, with considerable increase outside this optimum range. The study demonstrates that as the level of aggressiveness for acceleration maneuvers increases, the fuel-consumption and emission rates per maneuver decrease because the vehicle spends less time accelerating. However, when emissions are gathered over a sufficiently long fixed distance, fuel-consumption and mobile-source emission rates per-unit distance increase as the level of acceleration increases because of the history effects that accompany rich-mode engine operations. In addition, the paper demonstrates the validity of the VT-Micro framework for modeling steady-state vehicle fuel-consumption and emission behavior. Finally, the research demonstrates that the VT-Micro framework requires further refinement to capture non-steady-state history behavior when the engine operates in rich mode. (Author)

  13. Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Barrett, N., E-mail: nick.barrett@cea.fr; Gottlob, D. M.; Mathieu, C.; Lubin, C. [SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex (France); Passicousset, J. [SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex (France); IFP Energies nouvelles, Rond-point de l’échangeur de Solaize, BP 3, 69360 Solaize (France); Renault, O.; Martinez, E. [University Grenoble-Alpes, 38000 Grenoble, France and CEA, LETI, MINATEC Campus, 38054 Grenoble (France)

    2016-05-15

    Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

  14. Self-calibrating magnetic field diagnostics in beam emission spectroscopy

    International Nuclear Information System (INIS)

    Voslamber, D.

    1995-01-01

    Magnetic field diagnostics in tokamaks using the motional Stark effect in fast neutral beams have been based on two kinds of polarimetry which we call ''static'' and ''dynamic.'' A detailed analysis shows that static polarimetry presents a number of advantages over dynamic polarimetry, provided it is made complete in the sense that a sufficient number of polarization analyzers are installed and different parts of the spectrum are explored to yield full information on the set of unknowns inherent in the problem. A detailed scheme of complete static polarimetry is proposed, including the case where an in-vessel mirror with changing characteristics (coating by impurities) is placed in front of the optical detection system. The main merit of this scheme relies on the fact that it is self-calibrating with respect to both the characteristics of the mirror and the transmission of the different polarization channels, the latter item implying that it is uniquely based on relative measurements of spectra. Further advantages are a greater flexibility with regard to different kinds of diagnostics and the circumstance that the technical equipment is less involved. The above scheme is based on a detection system of moderate etendue exploiting a large spectral domain, which is the regime where static polarimetry usually operates. It is also possible, however, to work with large etendue and a small spectral domain, such as commonly adopted in dynamic polarimetry. Using such a regime, static polarimetry loses the advantages mentioned above but gains, as a new advantage, the benefit of a comparatively lower level of photon noise. copyright 1995 American Institute of Physics

  15. Electron Bernstein wave emission from an overdense reversed field pinch plasma

    International Nuclear Information System (INIS)

    Chattopadhyay, P.K.; Anderson, J.K.; Biewer, T.M.; Craig, D.; Forest, C.B.; Harvey, R.W.; Smirnov, A.P.

    2002-01-01

    Blackbody levels of emission in the electron cyclotron range of frequencies have been observed from an overdense (ω pe ∼3ω ce ) Madison Symmetric Torus [Dexter et al., Fusion Technol. 19, 131 (1991)] reversed field pinch plasma, a result of electrostatic electron Bernstein waves emitted from the core and mode converted into electromagnetic waves at the extreme plasma edge. Comparison of the measured radiation temperature with profiles measured by Thomson scattering indicates that the mode conversion efficiency can be as high as ∼75%. Emission is preferentially in the X-mode polarization, and is strongly dependent upon the density and magnetic field profiles at the mode conversion point

  16. Electric field strength in a silicon surface barrier detector with the presence of a dielectric plasma column

    International Nuclear Information System (INIS)

    Kanno, Ikuo

    1994-01-01

    The dynamic change of the electric field strength in a silicon surface barrier detector (SSBD) is studied. With the presence of a dielectric plasma column in the depletion layer of the SSBD, the electric field strength inside/outside the plasma column is suppressed/enhanced. As the length and the dielectric constant of the plasma column become shorter and smaller, the suppression and enhancement of the electric field strength become less. The electric field strength recovers the initial state, when the plasma column disappears. When the electrons and holes are inside/outside the dielectric plasma column, they have less/more electric potential than the one they have when there is no plasma column. During the movement of the electron/hole outside the plasma column to the positive/negative electrode, the enhanced electric field strength becomes smaller. Electron and hole pairs, which are the parts of the dielectric plasma column, arrive at positive and negative electrodes, having insufficient electric potential to induce the unit charge. This paper shows that the presence of a dielectric plasma column explains the main part of the residual defect in a SSBD. ((orig.))

  17. A model to relate wind tunnel measurements to open field odorant emissions from liquid area sources

    Science.gov (United States)

    Lucernoni, F.; Capelli, L.; Busini, V.; Sironi, S.

    2017-05-01

    Waste Water Treatment Plants are known to have significant emissions of several pollutants and odorants causing nuisance to the near-living population. One of the purposes of the present work is to study a suitable model to evaluate odour emissions from liquid passive area sources. First, the models describing volatilization under a forced convection regime inside a wind tunnel device, which is the sampling device that typically used for sampling on liquid area sources, were investigated. In order to relate the fluid dynamic conditions inside the hood to the open field and inside the hood a thorough study of the models capable of describing the volatilization phenomena of the odorous compounds from liquid pools was performed and several different models were evaluated for the open field emission. By means of experimental tests involving pure liquid acetone and pure liquid butanone, it was verified that the model more suitable to describe precisely the volatilization inside the sampling hood is the model for the emission from a single flat plate in forced convection and laminar regime, with a fluid dynamic boundary layer fully developed and a mass transfer boundary layer not fully developed. The proportionality coefficient for the model was re-evaluated in order to account for the specific characteristics of the adopted wind tunnel device, and then the model was related with the selected model for the open field thereby computing the wind speed at 10 m that would cause the same emission that is estimated from the wind tunnel measurement furthermore, the field of application of the proposed model was clearly defined for the considered models during the project, discussing the two different kinds of compounds commonly found in emissive liquid pools or liquid spills, i.e. gas phase controlled and liquid phase controlled compounds. Lastly, a discussion is presented comparing the presented approach for emission rates recalculation in the field, with other approaches

  18. Enhancement of electron field emission of vertically aligned carbon nanotubes by nitrogen plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Plasma Nanoscience Centre Australia (PNCA), CSIRO Materials Science and Engineering, P.O. Box 218, Lindfield, NSW 2070 (Australia); Cheng, Q.J. [Plasma Nanoscience Centre Australia (PNCA), CSIRO Materials Science and Engineering, P.O. Box 218, Lindfield, NSW 2070 (Australia); Plasma Nanoscience, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia); Chen, X. [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 (China); Ostrikov, K., E-mail: kostya.ostrikov@csiro.au [Plasma Nanoscience Centre Australia (PNCA), CSIRO Materials Science and Engineering, P.O. Box 218, Lindfield, NSW 2070 (Australia); Plasma Nanoscience, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia)

    2011-09-22

    Highlights: > A new and custom-designed bias-enhanced hot-filament chemical vapor deposition system is developed to synthesize vertically aligned carbon nanotubes. > The carbon nanotubes are later treated with nitrogen plasmas. > The electron field emission characteristics of the carbon nanotubes are significantly improved after the nitrogen plasma treatment. > A new physical mechanism is proposed to interpret the improvement of the field emission characteristics. - Abstract: The electron field emission (EFE) characteristics from vertically aligned carbon nanotubes (VACNTs) without and with treatment by the nitrogen plasma are investigated. The VACNTs with the plasma treatment showed a significant improvement in the EFE property compared to the untreated VACNTs. The morphological, structural, and compositional properties of the VACNTs are extensively examined by scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and energy dispersive X-ray spectroscopy. It is shown that the significant EFE improvement of the VACNTs after the nitrogen plasma treatment is closely related to the variation of the morphological and structural properties of the VACNTs. The high current density (299.6 {mu}A/cm{sup 2}) achieved at a low applied field (3.50 V/{mu}m) suggests that the VACNTs after nitrogen plasma treatment can serve as effective electron field emission sources for numerous applications.

  19. Enhancement of electron field emission of vertically aligned carbon nanotubes by nitrogen plasma treatment

    International Nuclear Information System (INIS)

    Wang, B.B.; Cheng, Q.J.; Chen, X.; Ostrikov, K.

    2011-01-01

    Highlights: → A new and custom-designed bias-enhanced hot-filament chemical vapor deposition system is developed to synthesize vertically aligned carbon nanotubes. → The carbon nanotubes are later treated with nitrogen plasmas. → The electron field emission characteristics of the carbon nanotubes are significantly improved after the nitrogen plasma treatment. → A new physical mechanism is proposed to interpret the improvement of the field emission characteristics. - Abstract: The electron field emission (EFE) characteristics from vertically aligned carbon nanotubes (VACNTs) without and with treatment by the nitrogen plasma are investigated. The VACNTs with the plasma treatment showed a significant improvement in the EFE property compared to the untreated VACNTs. The morphological, structural, and compositional properties of the VACNTs are extensively examined by scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and energy dispersive X-ray spectroscopy. It is shown that the significant EFE improvement of the VACNTs after the nitrogen plasma treatment is closely related to the variation of the morphological and structural properties of the VACNTs. The high current density (299.6 μA/cm 2 ) achieved at a low applied field (3.50 V/μm) suggests that the VACNTs after nitrogen plasma treatment can serve as effective electron field emission sources for numerous applications.

  20. Mitigating nitrous oxide emissions from tea field soil using bioaugmentation with a Trichoderma viride biofertilizer.

    Science.gov (United States)

    Xu, Shengjun; Fu, Xiaoqing; Ma, Shuanglong; Bai, Zhihui; Xiao, Runlin; Li, Yong; Zhuang, Guoqiang

    2014-01-01

    Land-use conversion from woodlands to tea fields in subtropical areas of central China leads to increased nitrous oxide (N2O) emissions, partly due to increased nitrogen fertilizer use. A field investigation of N2O using a static closed chamber-gas chromatography revealed that the average N2O fluxes in tea fields with 225 kg N ha(-1) yr(-1) fertilizer application were 9.4 ± 6.2 times higher than those of woodlands. Accordingly, it is urgent to develop practices for mitigating N2O emissions from tea fields. By liquid-state fermentation of sweet potato starch wastewater and solid-state fermentation of paddy straw with application of Trichoderma viride, we provided the tea plantation with biofertilizer containing 2.4 t C ha(-1) and 58.7 kg N ha(-1). Compared to use of synthetic N fertilizer, use of biofertilizer at 225 kg N ha(-1) yr(-1) significantly reduced N2O emissions by 33.3%-71.8% and increased the tea yield by 16.2%-62.2%. Therefore, the process of bioconversion/bioaugmentation tested in this study was found to be a cost-effective and feasible approach to reducing N2O emissions and can be considered the best management practice for tea fields.

  1. The Field Emission Characteristics of Titanium-Doped Nano-Diamonds

    Institute of Scientific and Technical Information of China (English)

    YANG Yan-Ning; ZHANG Zhi-Yong; ZHANG Fu-Chun; DONG Jun-Tang; ZHAO Wu; ZHAI Chun-Xue; ZHANG Wei-Hu

    2012-01-01

    An electrophoresis solution,prepared in a specific ratio of titanium (Ti)-doped nano-diamond,is dispersed by ultrasound and the nano-diamond coating is then deposited on a polished Ti substrate by electrophoresis.After high-temperature vacuum annealing,the appearance of the surface and the microstructures of the coating are observed by a metallomicroscope,scanning electron microscopy and Raman spectroscopy.The field emission characteristics and luminescence features are also tested,and the mechanism of the field emission characteristics of the Ti-doped nano-diamond is analyzed.The experimental results show that under the same conditions,the diamond-coated surface (by deposition) is more uniform after doping with 5 mg of Ti powder.Compared with the undoped nano-diamond cathode,the turn-on fields decline from 6.95 to 5.95 V/μm.When the electric field strength is 13.80 V/μm,the field emission current density increases to 130.00 μA/cm2.Under the applied fields,the emission current is stable and the luminescence is at its best,while the field emission characteristics of the 10 mg Ti-doped coating become worse,as does the luminescence.The reason for this could be that an excessive amount of TiC is generated on the surface of the coating.%An electrophoresis solution, prepared in a speciGc ratio of titanium (Ti)-doped nano-diamond, is dispersed by ultrasound and the nano-diamond coating is then deposited on a polished Ti substrate by electrophoresis. After high-temperature vacuum annealing, the appearance of the surface and the microstructures of the coating are observed by a metallomicroscope, scanning electron microscopy and Raman spectroscopy. The field emission characteristics and luminescence features are also tested, and the mechanism of the field emission characteristics of the Ti-doped nano-diamond is analyzed. The experimental results show that under the same conditions, the diamond-coated surface (by deposition) is more uniform after doping with 5 mg of Ti

  2. Effects of organic matter application on methane emission from paddy fields adopting organic farming system

    Directory of Open Access Journals (Sweden)

    P Nungkat

    2015-01-01

    Full Text Available A study that was aimed to determine the effect of the use of organic manure and azolla on methane emission on paddy field of organic systems was conducted on paddy fields in the Gempol Village, Sambirejo District of Sragen Regency, Indonesia. The experimental design performed for this study was a completely randomized block design consisting of three factors; the factor I was rice cultivars (Mira-1; Mentik Wangi; Merah Putih; factor II was dose of organic manure (0 t/ha and 10 t/ha and factor III was Azolla inoculums dose (0 t/ha and 2 t/ha. Gas sampling was conducted 3 times in one growing season when the rice plants reached ages of 38, 66 and 90 days after planting. The results showed that there was no correlation between the uses of organic fertilizers for rice production on methane emission. The increase of methane emission was very much influenced by the redox potential. Methane emission from Mira-1 field was higher than that from Mentik Wangi and Merah Putih fields. Emission of methane gas from Mira-1 field ranged from -509.82 to 791.34 kg CH4/ha; that from Wangi ranged from -756.77 to d 547.50 kg CH4/ha and that from Merah Putih ranged from -399.63 to 459.94 kg CH4/ha. Application of 10 t organic manure /ha and 2 t azolla/ha in Mentik Wangi reduced methane emissions with a high rice production compared to Merah Putih and Mira-1.

  3. Particle Acceleration, Magnetic Field Generation and Emission from Relativistic Jets and Supernova Remnants

    Science.gov (United States)

    Nishikawa, K.-I.; Hartmann, D. H.; Hardee, P.; Hededal, C.; Mizunno, Y.; Fishman, G. J.

    2006-01-01

    We performed numerical simulations of particle acceleration, magnetic field generation, and emission from shocks in order to understand the observed emission from relativistic jets and supernova remnants. The investigation involves the study of collisionless shocks, where the Weibel instability is responsible for particle acceleration as well as magnetic field generation. A 3-D relativistic particle-in-cell (RPIC) code has been used to investigate the shock processes in electron-positron plasmas. The evolution of theWeibe1 instability and its associated magnetic field generation and particle acceleration are studied with two different jet velocities (0 = 2,5 - slow, fast) corresponding to either outflows in supernova remnants or relativistic jets, such as those found in AGNs and microquasars. Slow jets have intrinsically different structures in both the generated magnetic fields and the accelerated particle spectrum. In particular, the jet head has a very weak magnetic field and the ambient electrons are strongly accelerated and dragged by the jet particles. The simulation results exhibit jitter radiation from inhomogeneous magnetic fields, generated by the Weibel instability, which has different spectral properties than standard synchrotron emission in a homogeneous magnetic field.

  4. [Effects of diurnal warming on soil N2O emission in soybean field].

    Science.gov (United States)

    Hu, Zheng-Hua; Zhou, Ying-Ping; Cui, Hai-Ling; Chen, Shu-Tao; Xiao, Qi-Tao; Liu, Yan

    2013-08-01

    To investigate the impact of experimental warming on N2O emission from soil of soybean field, outdoor experiments with simulating diurnal warming were conducted, and static dark chamber-gas chromatograph method was used to measure N2O emission fluxes. Results indicated that: the diurnal warming did not change the seasonal pattern of N2O emissions from soil. In the whole growing season, comparing to the control treatment (CK), the warming treatment (T) significantly enhanced the N2O flux and the cumulative amount of N2O by 17.31% (P = 0.019), and 20.27% (P = 0.005), respectively. The significant correlations were found between soil N2O emission and soil temperature, moisture. The temperature sensitivity values of soil N2O emission under CK and T treatments were 3.75 and 4.10, respectively. In whole growing stage, T treatment significantly increased the crop aboveground and total biomass, the nitrate reductase activity, and total nitrogen in leaves, while significantly decreased NO3(-) -N content in leaves. T treatment significantly increased soil NO3(-) -N content, but had no significant effect on soil organic carbon and total nitrogen contents. The results of this study suggested that diurnal warming enhanced N2O emission from soil in soybean field.

  5. Closed string emission from unstable D-brane with background electric field

    International Nuclear Information System (INIS)

    Nagami, Kenji

    2004-01-01

    We study the closed string emission from an unstable Dp-brane with constant background electric field in bosonic string theory. The average total number density and the average total energy density of emitted closed strings are explicitly calculated in the presence of electric field. It is explicitly shown that the energy density in the UV region becomes finite whenever the background electric field is switched on. The energy density converted into closed strings in the presence of electric field is negligibly small compared with the D-brane tension in the weak string coupling limit. (author)

  6. Emissions of carbon dioxide and methane from fields fertilized with digestate from an agricultural biogas plant

    Science.gov (United States)

    Czubaszek, Robert; Wysocka-Czubaszek, Agnieszka

    2018-01-01

    Digestate from biogas plants can play important role in agriculture by providing nutrients, improving soil structure and reducing the use of mineral fertilizers. Still, less is known about greenhouse gas emissions from soil during and after digestate application. The aim of the study was to estimate the emissions of carbon dioxide (CO2) and methane (CH4) from a field which was fertilized with digestate. The gas fluxes were measured with the eddy covariance system. Each day, the eddy covariance system was installed in various places of the field, depending on the dominant wind direction, so that each time the results were obtained from an area where the digestate was distributed. The results showed the relatively low impact of the studied gases emissions on total greenhouse gas emissions from agriculture. Maximum values of the CO2 and CH4 fluxes, 79.62 and 3.049 µmol s-1 m-2, respectively, were observed during digestate spreading on the surface of the field. On the same day, the digestate was mixed with the topsoil layer using a disc harrow. This resulted in increased CO2 emissions the following day. Intense mineralization of digestate, observed after fertilization may not give the expected effects in terms of protection and enrichment of soil organic matter.

  7. The Field Emission Properties of Graphene Aggregates Films Deposited on Fe-Cr-Ni alloy Substrates

    Directory of Open Access Journals (Sweden)

    Zhanling Lu

    2010-01-01

    Full Text Available The graphene aggregates films were fabricated directly on Fe-Cr-Ni alloy substrates by microwave plasma chemical vapor deposition system (MPCVD. The source gas was a mixture of H2 and CH4 with flow rates of 100 sccm and 12 sccm, respectively. The micro- and nanostructures of the samples were characterized by Raman scattering spectroscopy, field emission scanning electron microscopy (SEM, and transparent electron microscopy (TEM. The field emission properties of the films were measured using a diode structure in a vacuum chamber. The turn-on field was about 1.0 V/m. The current density of 2.1 mA/cm2 at electric field of 2.4 V/m was obtained.

  8. Morphology-control of VO2 (B) nanostructures in hydrothermal synthesis and their field emission properties

    International Nuclear Information System (INIS)

    Yin Haihong; Yu Ke; Zhang Zhengli; Zhu Ziqiang

    2011-01-01

    VO 2 (B) nanostructures were synthesized via a facile hydrothermal process using V 2 O 5 as source material and oxalic acid as reductant. Three nanostructures of nanorods, nanocarambolas and nanobundles were found existing in the products, and a continuous changing of morphology was found in the synthesis process, during which the proportion of these three types of nanostructures can be adjusted by altering the concentrations of oxalic acid. The microstructures were evaluated using X-ray diffraction and scanning and transmission electron microscopies, respectively. FE properties measurement of these three types of nanostructures showed that the nanobundles have the best field emission performance with a turn-on field of ∼1.4 V/μm and a threshold field of ∼5.38 V/μm. These characteristics make VO 2 (B) nanostructures a competitive cathode material in field emission devices.

  9. SURFACE FILMS TO SUPPRESS FIELD EMISSION IN HIGH-POWER MICROWAVE COMPONENTS

    Energy Technology Data Exchange (ETDEWEB)

    Hirshfield, Jay l

    2014-02-07

    Results are reported on attempts to reduce the RF breakdown probability on copper accelerator structures by applying thin surface films that could suppress field emission of electrons. Techniques for application and testing of copper samples with films of metals with work functions higher than copper are described, principally for application of platinum films, since platinum has the second highest work function of any metal. Techniques for application of insulating films are also described, since these can suppress field emission and damage on account of dielectric shielding of fields at the copper surface, and on account of the greater hardness of insulating films, as compared with copper. In particular, application of zirconium oxide films on high-field portions of a 11.424 GHz SLAC cavity structure for breakdown tests are described.

  10. Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

    International Nuclear Information System (INIS)

    Mengui, U.A.; Campos, R.A.; Alves, K.A.; Antunes, E.F.; Hamanaka, M.H.M.O.; Corat, E.J.; Baldan, M.R.

    2015-01-01

    Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films

  11. Field emission properties of low-density carbon nanotubes prepared on anodic aluminum-oxide template

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Soo-Hwan [Samsung Advanced Institute of Technology, Suwon (Korea, Republic of); Lee, Kun-Hong [Pohang University of Science and Technology, Pohang (Korea, Republic of)

    2004-08-15

    Anodic aluminum-oxide (AAO) templates were fabricated by two-step anodizing an Al film. After the Co catalyst had been electrochemically deposited onto the bottom of the AAO template, carbon nanotubes (CNTs) were grown by using catalytic pyrolysis of C{sub 2}H{sub 2} and H{sub 2} at 650 .deg. C. Overgrowth of CNTs with low density on the AAO templates was observed. The field-emission measurements on the samples showed a turn-on field of 2.17 V/mum and a field enhancement factor of 5700. The emission pattern on a phosphor screen was quite homogeneous over the area at a relatively low electric field.

  12. Field emission response from multi-walled carbon nanotubes grown on electrochemically engineered copper foil

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, Amit Kumar; Jain, Vaibhav [Nanomaterials and Applications Lab., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Saini, Krishna [Nanomaterials and Applications Lab., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Lahiri, Indranil, E-mail: indrafmt@iitr.ac.in [Nanomaterials and Applications Lab., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India)

    2017-02-01

    Exciting properties of carbon nanotube has proven it to be a promising candidate for field emission applications, if its processing cost can be reduced effectively. In this research, a new electrochemical technique is proposed for growing carbon nanotubes in selective areas by thermal chemical vapour deposition. In this process, electrochemical processing is used to create localized pits and deposition of catalysts, which act as roots to support growth and alignment of the CNTs on copper substrate. CNTs grown thus were characterized and studied using scanning electron microscope, transmission electron microscope and Raman spectroscopy, elucidating presence of multiwall carbon nanotubes (MWCNT). These CNT emitters have comparatively lower turn-on field and higher field enhancement factor. - Highlights: • Electrochemical pitting for localized carbon nanotube growth is proposed. • Electrochemical pitting method shows patterning effect on the substrate. • Size and density of pits depend on voltage, pH and temperature. • CNTs thus grown shows good field emission response.

  13. Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

    Energy Technology Data Exchange (ETDEWEB)

    Mengui, U.A., E-mail: ursulamengui@gmail.com [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Campos, R.A.; Alves, K.A.; Antunes, E.F. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Hamanaka, M.H.M.O. [Centro de Tecnologia da Informação Renato Archer, Divisão de Superfícies de Interação e Displays, Rodovia D. Pedro I (SP 65) km 143.6, CP 6162, CEP 13089-500, Campinas, SP (Brazil); Corat, E.J.; Baldan, M.R. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil)

    2015-04-15

    Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films.

  14. Field induced decrystallization of silicon: Evidence of a microwave non-thermal effect

    Science.gov (United States)

    Nozariasbmarz, Amin; Dsouza, Kelvin; Vashaee, Daryoosh

    2018-02-01

    It is rather strange and not fully understood that some materials decrystallize when exposed to microwave radiation, and it is still debatable if such a transformation is a thermal or non-thermal effect. We hereby report experimental evidences that weight the latter effect. First, a single crystal silicon wafer exposed to microwaves showed strong decrystallization at high temperature. Second, when some areas of the wafer were masked with metal coating, only the exposed areas underwent decrystallization. Transmission electron microscopy analysis, x-ray diffraction data, and thermal conductivity measurements all indicated strong decrystallization, which occurred in the bulk of the material and was not a surface effect. These observations favor the existence of a non-thermal microwave effect.

  15. Nanostructured silicon for photonics from materials to devices

    CERN Document Server

    Gaburro, Z; Daldosso, N

    2006-01-01

    The use of light to channel signals around electronic chips could solve several current problems in microelectronic evolution including: power dissipation, interconnect bottlenecks, input/output from/to optical communication channels, poor signal bandwidth, etc. It is unfortunate that silicon is not a good photonic material: it has a poor light-emission efficiency and exhibits a negligible electro-optical effect. Silicon photonics is a field having the objective of improving the physical properties of silicon; thus turning it into a photonic material and permitting the full convergence of elec

  16. Design and fabrication of carbon nanotube field-emission cathode with coaxial gate and ballast resistor.

    Science.gov (United States)

    Sun, Yonghai; Yeow, John T W; Jaffray, David A

    2013-10-25

    A low density vertically aligned carbon nanotube-based field-emission cathode with a ballast resistor and coaxial gate is designed and fabricated. The ballast resistor can overcome the non-uniformity of the local field-enhancement factor at the emitter apex. The self-aligned fabrication process of the coaxial gate can avoid the effects of emitter tip misalignment and height non-uniformity. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Thermal field emission observation of single-crystal LaB6

    International Nuclear Information System (INIS)

    Nagata, H.; Harada, K.; Shimizu, R.

    1990-01-01

    TFE (thermal field emission) properties of LaB 6 left-angle 100 right-angle and left-angle 310 right-angle single crystals were investigated by emission pattern observation. It was found that field evaporation with the tip temperature held at ∼1500 degree C is very useful to get a clean pattern of fourfold symmetry. Each of four bright spots in the clean pattern was presumed to correspond to left-angle 310 right-angle emission. It is proposed, as the most appropriate operating condition, to use the left-angle 310 right-angle LaB 6 tip at a temperature ∼1000 degree C in vacuum of 10 -9 Torr region, promising a new TF emitter of high brightness and stability for practical use

  18. Synthesis and atmospheric pressure field emission operation of W18O49 nanowires

    NARCIS (Netherlands)

    Agiral, A.; Gardeniers, Johannes G.E.

    2008-01-01

    Tungsten oxide W18O49 nanorods with diameters of 15−20 nm were grown on tungsten thin films exposed to ethene and nitrogen at 700 °C at atmospheric pressure. It was found that tungsten carbide formation enhances nucleation and growth of nanorods. Atmospheric pressure field emission measurements in

  19. Optimization of field emission properties of carbon nanotubes by Taguchi method

    International Nuclear Information System (INIS)

    Ting, J.-H.; Chang, C.-C.; Chen, S.-L.; Lu, D.-S.; Kung, C.-Y.; Huang, F.-Y.

    2006-01-01

    It is the purpose of this study to evaluate the field emission property of carbon nanotubes (CNTs) prepared by microwave plasma-enhanced chemical vapor deposition (MPCVD) method. Nickel layer of 5 nm in thickness on 20-nm thickness titanium nitride film was transformed into discrete islands after hydrogen plasma pretreatment. CNTs were then grown up on Ni-coated areas by MPCVD. Through the practice of Taguchi method, superior CNT films with very low emission onset electric field, about 0.7 V/μm (at J = 10 μA/cm 2 ), are attained without post-deposition treatment. It is found that microwave power has the most important influence on the field emission characteristics of CNT films. The increase of methane flow ratio will downgrade the degree of graphitization of CNT and thus its field emission characteristics. Scanning electron microscope and transmission electron microscopy (TEM) observation and energy dispersive X-ray spectrometer analysis reveal that CNT growth by MPCVD is based on tip-growth mechanism. TEM micrographs validate the hollow, bamboo-like structure of the multi-walled CNTs

  20. Field emission characteristics of ZnO nanoneedle array cell under ultraviolet irradiation

    International Nuclear Information System (INIS)

    Lee, Woong; Jeong, Min-Chang; Kim, Min Jun; Myoung, Jae-Min

    2007-01-01

    Field emission (FE) behaviours of ZnO nanoneedle array under ultraviolet (UV) irradiation have been investigated. UV irradiation noticeably stabilized the FE behaviours. Modifications in the tunnelling barrier height and effective aspect ratio due to the oxygen-related surface species, which can be desorbed by UV irradiation, are supposed to be responsible for these observations

  1. A Platform to Optimize the Field Emission Properties of Carbon Nanotube Based Fibers (Postprint)

    Science.gov (United States)

    2016-08-25

    characterization of key metrics , such as effective field enhancement factor and emission area. It is imperative to address issues relating to whether...important are the effects of Coulomb repulsion between adjacent emitting CNTs on the FE characteristics? When do space-charge effects become important and

  2. Field determination of multipollutant, open area combustion source emission factors with a hexacopter unmanned aerial vehicle

    Science.gov (United States)

    An emission sensor/sampler system was coupled to a NASA hexacopter unmanned aerial system (UAS) to characterize gases and particles in the plume emitted from open burning of military ordnance. The UAS/sampler was tested at two field sites resulting in 33 flights at Radford, VA a...

  3. Enhancement on field emission characteristics of pulsed laser deposited diamondlike carbon films using Au precoatings

    International Nuclear Information System (INIS)

    Chuang, F.Y.; Sun, C.Y.; Cheng, H.F.; Lin, I.N.

    1997-01-01

    Using Au precoatings has been observed to significantly enhance the field emission properties of diamondlike carbon (DLC) films deposited on Si substrates. The electron emission can be turned on at a low field as 7 V/μm and a large emission current density as 2000 μA/cm 2 can be obtained at 20 V/μm applied field. However, preannealing the Au-coated Si substrates at 500 degree C for 30 min is necessary to achieve such a performance. Microscopic examination on surface and cross-sectional morphologies of the DLC/Au/Si films using atomic force microscopy and scanning electron microscopy, respectively, in conjunction with the elemental depth profile examination of these films using secondary ion mass spectroscopy, indicated that substantial interdiffusion between DLC, Au, and Si layers has occurred. Such kind of reaction is proposed to lower the resistance for electrons to transport across the interfaces and, thereafter, enhances the field emission properties of the DLC/Au/Si films. copyright 1997 American Institute of Physics

  4. A vertex including emission of spin fields for an arbitrary bc system

    International Nuclear Information System (INIS)

    Di Vecchia, P.; Madsen, R.A.; Roland, K.

    1990-01-01

    We construct the (N+2M) Point Vertex involving the emission of N Neveu-Schwarz and 2M Ramond states for a bosonic and fermionic bc system with a bockground charge Q. From it one can compute correlation functions on the sphere involving any number of spin fields. We show in detail that the vertex satisfies overlap conditions. (orig.)

  5. Emissions from Prescribed Burning of Agricultural Fields in the Pacific Northwest

    Science.gov (United States)

    Prescribed burns of winter wheat stubble and Kentucky bluegrass fields in northern Idaho and eastern Washington states (U.S.A.) were sampled using ground-, aerostat-, airplane-, and laboratory-based measurement platforms to determine emission factors, compare methods, and provide...

  6. Field emission scanning electron microscopy (FE-SEM) as an approach for nanoparticle detection inside cells

    Czech Academy of Sciences Publication Activity Database

    Havrdová, M.; Poláková, K.; Skopalík, J.; Vůjtek, M.; Mokdad, A.; Homolková, M.; Tuček, J.; Nebesářová, Jana; Zbořil, R.

    2014-01-01

    Roč. 67, DEC 2014 (2014), s. 149-154 ISSN 0968-4328 Institutional support: RVO:60077344 Keywords : Field emission scanning electronmicroscopy (FE-SEM) * Stem cells * Iron oxide nanoparticles * Cellular morphology * Endosomes * Cell uptake Subject RIV: FD - Oncology ; Hematology Impact factor: 1.988, year: 2014

  7. Characteristics of a single photon emission tomography system with a wide field gamma camera

    International Nuclear Information System (INIS)

    Mathonnat, F.; Soussaline, F.; Todd-Pokropek, A.E.; Kellershohn, C.

    1979-01-01

    This text summarizes a work study describing the imagery possibilities of a single photon emission tomography system composed of a conventional wide field gamma camera, connected to a computer. The encouraging results achieved on the various phantoms studied suggest a significant development of this technique in clinical work in Nuclear Medicine Departments [fr

  8. Field emission characteristics of a small number of carbon fiber emitters

    Directory of Open Access Journals (Sweden)

    Wilkin W. Tang

    2016-09-01

    Full Text Available This paper reports an experiment that studies the emission characteristics of small number of field emitters. The experiment consists of nine carbon fibers in a square configuration. Experimental results show that the emission characteristics depend strongly on the separation between each emitter, providing evidence of the electric field screening effects. Our results indicate that as the separation between the emitters decreases, the emission current for a given voltage also decreases. The authors compare the experimental results to four carbon fiber emitters in a linear and square configurations as well as to two carbon fiber emitters in a paired array. Voltage-current traces show that the turn-on voltage is always larger for the nine carbon fiber emitters as compared to the two and four emitters in linear configurations, and approximately identical to the four emitters in a square configuration. The observations and analysis reported here, based on Fowler-Nordheim field emission theory, suggest the electric field screening effect depends critically on the number of emitters, the separation between them, and their overall geometric configuration.

  9. Architectured Bi{sub 2}S{sub 3} nanoflowers: photoenhanced field emission study

    Energy Technology Data Exchange (ETDEWEB)

    Warule, Sambhaji S.; Kashid, Ranjit V.; Shinde, Deodatta R. [University of Pune, Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics (India); Chaudhari, Nilima S.; Kale, Bharat B., E-mail: kbbb1@yahoo.com [Centre for Materials for Electronics Technology (C-MET), Department of Information Technology, Government of India (India); More, Mahendra A., E-mail: mam@physics.unipune.ac.in [University of Pune, Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics (India)

    2012-06-15

    In the present investigation, we demonstrate a facile hydrothermal/solvothermal route to fabricate elegant Bi{sub 2}S{sub 3} nanoflowers in large scale with highly oriented (001) surfaces. The synthesis route was observed to radically determine the overall morphology of the resultant product. Under hydrothermal conditions (12 h), formation of Bi{sub 2}S{sub 3} flowers on nickel foil composed with the self-assembled tapered nanorods were obtained. Whereas after prolonged reaction time (24 h), formation of ultra long micro belts were observed. Interestingly, the architectured Bi{sub 2}S{sub 3} flowers obtained by solvothermal route are seen to be composed with self assembled nanorods and it was also observed that the synthesis duration influences their shape, size, and areal density. Finding of such unique nanostructures on nickel foil arose by hydrothermal route exemplify a prominent photoenhanced field emission upon visible light illumination, which is attributed to the photoconductivity of Bi{sub 2}S{sub 3}. It is noteworthy that the field emission studies reveal low turn-on field of {approx}1.04 V/{mu}m, required to draw an emission current density of {approx}0.1 {mu}A/cm{sup 2}, which is found to be lower than the earlier reports. The average emission current is observed to be stable over the duration of 3 h. In addition, field emission behavior of a single Bi{sub 2}S{sub 3} flower (pasted on a tungsten microtip) has also been investigated. The high sensitivity and fast response of photoenhanced emission current switching indicate the Bi{sub 2}S{sub 3} nanoflowers as a promising candidate for micro/nano-optoelectronic devices.Graphical abstract.

  10. Breast imaging using an amorphous silicon-based full-field digital mammographic system: stability of a clinical prototype.

    Science.gov (United States)

    Vedantham, S; Karellas, A; Suryanarayanan, S; D'Orsi, C J; Hendrick, R E

    2000-11-01

    An amorphous silicon-based full-breast imager for digital mammography was evaluated for detector stability over a period of 1 year. This imager uses a structured CsI:TI scintillator coupled to an amorphous silicon layer with a 100-micron pixel pitch and read out by special purpose electronics. The stability of the system was characterized using the following quantifiable metrics: conversion factor (mean number of electrons generated per incident x-ray), presampling modulation transfer function (MTF), detector linearity and sensitivity, detector signal-to-noise ratio (SNR), and American College of Radiology (ACR) accreditation phantom scores. Qualitative metrics such as flat field uniformity, geometric distortion, and Society of Motion Picture and Television Engineers (SMPTE) test pattern image quality were also used to study the stability of the system. Observations made over this 1-year period indicated that the maximum variation from the average of the measurements were less than 0.5% for conversion factor, 3% for presampling MTF over all spatial frequencies, 5% for signal response, linearity and sensitivity, 12% for SNR over seven locations for all 3 target-filter combinations, and 0% for ACR accreditation phantom scores. ACR mammographic accreditation phantom images indicated the ability to resolve 5 fibers, 4 speck groups, and 5 masses at a mean glandular dose of 1.23 mGy. The SMPTE pattern image quality test for the display monitors used for image viewing indicated ability to discern all contrast steps and ability to distinguish line-pair images at the center and corners of the image. No bleeding effects were observed in the image. Flat field uniformity for all 3 target-filter combinations displayed no artifacts such as gridlines, bad detector rows or columns, horizontal or vertical streaks, or bad pixels. Wire mesh screen images indicated uniform resolution and no geometric distortion.

  11. Low-energy oxygen bombardment of silicon by MD simulations making use of a reactive force field

    International Nuclear Information System (INIS)

    Philipp, P.; Briquet, L.; Wirtz, T.; Kieffer, J.

    2011-01-01

    In the field of Secondary Ion Mass Spectrometry (SIMS), ion-matter interactions have been largely investigated by numerical simulations. For MD simulations related to inorganic samples, mostly classical force fields assuming stable bonding structure have been used. In materials science, level-three force fields capable of simulating the breaking and formation of chemical bonds have recently been conceived. One such force field has been developed by John Kieffer . This potential includes directional covalent bonds, Coulomb and dipolar interaction terms, dispersion terms, etc. Important features of this force field for simulating systems that undergo significant structural reorganization are (i) the ability to account for the redistribution of electron density upon ionization, formation, or breaking of bonds, through a charge transfer term, and (ii) the fact that the angular constraints dynamically adjust when a change in the coordination number of an atom occurs. In this paper, the modification of the force field to allow for an exact description of the sputtering process, the influence of this modification on previous results obtained for phase transitions in glasses as well as properties of particles sputtered at 250-1000 eV from a mono-crystalline silicon sample will be presented. The simulation results agree qualitatively with predictions from experiments or models. Most atoms are sputtered from the first monolayer: for an impact energy of 250 eV up to 86% of the atoms are sputtered from the first monolayer and for 750 eV, this percentage drops to 61%, with 89% of the atoms being sputtered from the first two monolayers. For sputtering yields, 250 and 500 eV results agree with experimental data, but for 750 eV sub-channelling in the pristine sample becomes more important than in experiments where samples turn amorphous under ion bombardment.

  12. Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

    Energy Technology Data Exchange (ETDEWEB)

    Venkattraman, Ayyaswamy [Department of Applied Mechanics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2013-11-15

    The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission.

  13. MAGNETIC FIELD STRUCTURE OF THE LARGE MAGELLANIC CLOUD FROM FARADAY ROTATION MEASURES OF DIFFUSE POLARIZED EMISSION

    Energy Technology Data Exchange (ETDEWEB)

    Mao, S. A. [National Radio Astronomy Observatory, P.O. Box O, Socorro, NM 87801 (United States); McClure-Griffiths, N. M.; McConnell, D. [Australia Telescope National Facility, CSIRO Astronomy and Space Science, Epping, NSW 1710 (Australia); Gaensler, B. M. [Sydney Institute for Astronomy, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia); Haverkorn, M. [Department of Astrophysics, Radboud University, P.O. Box 9010, 6500-GL Nijmegen (Netherlands); Beck, R. [Max-Planck-Institut fuer Radioastronomie, D-53121 Bonn (Germany); Wolleben, M. [Square Kilometre Array South Africa, The Park, Pinelands 7405 (South Africa); Stanimirovic, S. [Department of Astronomy, University of Wisconsin, Madison, WI 53706 (United States); Dickey, J. M. [Physics Department, University of Tasmania, Hobart, TAS 7001 (Australia); Staveley-Smith, L., E-mail: mao@astro.wisc.edu [International Centre for Radio Astronomy Research (ICRAR), The University of Western Australia, Crawley, WA 6009 (Australia)

    2012-11-01

    We present a study of the magnetic field of the Large Magellanic Cloud (LMC), carried out using diffuse polarized synchrotron emission data at 1.4 GHz acquired at the Parkes Radio Telescope and the Australia Telescope Compact Array. The observed diffuse polarized emission is likely to originate above the LMC disk on the near side of the galaxy. Consistent negative rotation measures (RMs) derived from the diffuse emission indicate that the line-of-sight magnetic field in the LMC's near-side halo is directed coherently away from us. In combination with RMs of extragalactic sources that lie behind the galaxy, we show that the LMC's large-scale magnetic field is likely to be of quadrupolar geometry, consistent with the prediction of dynamo theory. On smaller scales, we identify two brightly polarized filaments southeast of the LMC, associated with neutral hydrogen arms. The filaments' magnetic field potentially aligns with the direction toward the Small Magellanic Cloud (SMC). We suggest that tidal interactions between the SMC and the LMC in the past 10{sup 9} years are likely to have shaped the magnetic field in these filaments.

  14. Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

    International Nuclear Information System (INIS)

    Venkattraman, Ayyaswamy

    2013-01-01

    The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission

  15. Field emission from carbon nanotube bundle arrays grown on self-aligned ZnO nanorods

    International Nuclear Information System (INIS)

    Li Chun; Fang Guojia; Yuan Longyan; Liu Nishuang; Ai Lei; Xiang Qi; Zhao Dongshan; Pan Chunxu; Zhao Xingzhong

    2007-01-01

    The field emission (FE) properties of carbon nanotube (CNT) bundle arrays grown on vertically self-aligned ZnO nanorods (ZNRs) are reported. The ZNRs were first synthesized on ZnO-seed-coated Si substrate by the vapour phase transport method, and then the radically grown CNTs were grown directly on the surface of the ZNRs from ethanol flames. The CNT/ZNR composite showed a turn-on field of 1.5 V μm -1 (at 0.1 μA cm -2 ), a threshold field of 4.5 V μm -1 (at 1 mA cm -2 ) and a stable emission current with fluctuations of 5%, demonstrating significantly enhanced FE of ZNRs due to the low work function and high aspect ratio of the CNTs, and large surface-to-volume ratio of the underlying ZNRs

  16. Field-emission properties of transparent tungsten oxide nano-urchins

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Do-Hyung [Kyungpook National University, Nano-applied Physics Laboratory, Department of Physics, Daegu (Korea, Republic of)

    2012-09-15

    The field-emission properties of transparent tungsten oxide nano-urchin (NU) films deposited on conducting glass substrates were examined. The novel crystalline tungsten oxide NUs consisted of nanowires added to a spherical shell. The WO{sub 2.72} NUs showed better field-emission properties than the WO{sub 3} NUs with a low turn-on field of approximately 5.8 V/{mu}m and a current density as high as 1.3 mA/cm{sup 2} at 7.2 V/mm. The WO{sub x} NUs films could be used in FE applications using a large-area glass substrate without the need for a catalyst and a mechanical rubbing or lift-up process. These results have implications for the enhancement of FE properties by further tuning the WO{sub x} phases. (orig.)

  17. Particle-in-cell modeling of the nanosecond field emission driven discharge in pressurized hydrogen

    Science.gov (United States)

    Levko, Dmitry; Yatom, Shurik; Krasik, Yakov E.

    2018-02-01

    The high-voltage field-emission driven nanosecond discharge in pressurized hydrogen is studied using the one-dimensional Particle-in-Cell Monte Carlo collision model. It is obtained that the main part of the field-emitted electrons becomes runaway in the thin cathode sheath. These runaway electrons propagate the entire cathode-anode gap, creating rather dense (˜1012 cm-3) seeding plasma electrons. In addition, these electrons initiate a streamer propagating through this background plasma with a speed ˜30% of the speed of light. Such a high streamer speed allows the self-acceleration mechanism of runaway electrons present between the streamer head and the anode to be realized. As a consequence, the energy of runaway electrons exceeds the cathode-anode gap voltage. In addition, the influence of the field emission switching-off time is analyzed. It is obtained that this time significantly influences the discharge dynamics.

  18. Trapping induced Neff and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors

    International Nuclear Information System (INIS)

    Eremin, V.; Li, Z.; Iljashenko, I.

    1994-02-01

    The trapping of both non-equilibrium electrons and holes by neutron induced deep levels in high resistivity silicon planar detectors have been observed. In the experiments Transient Current and Charge Techniques, with short laser light pulse excitation have been applied at temperature ranges of 77--300 k. Light pulse illumination of the front (p + ) and back (n + ) contacts of the detectors showed effective trapping and detrapping, especially for electrons. At temperatures lower than 150 k, the detrapping becomes non-efficient, and the additional negative charge of trapped electrons in the space charge region (SCR) of the detectors leads to dramatic transformations of the electric field due to the distortion of the effective space charge concentration N eff . The current and charge pulses transformation data can be explained in terms of extraction of electric field to the central part of the detector from the regions near both contacts. The initial field distribution may be recovered immediately by dropping reverse bias, which injects both electrons and holes into the space charge region. In the paper, the degree of the N eff distortions among various detectors irradiated by different neutron fluences are compared

  19. Field-emission liquid-metal ion source and triode ion gun

    International Nuclear Information System (INIS)

    Komuro, M.; Kawakatsu, H.

    1981-01-01

    A pointed-filament-type field-emission liquid-metal ion source is designed and employed as a gold ion source. By adding a crossbar across a hairpin bend, the amount of the gold adhering on the filament is increased. The lifetime is estimated to be over 200 h at 10-mA emission current. The emission current increases with increasing extraction voltage up to a saturation value which is ascribed to a limitation of the supply of liquid gold to the needle apex. The value of current density per unit solid angle is 30 mA/sr at a total current of 30 mA, which is of the same order as that obtained from a gallium ion source previously reported. Emission current fluctuations of a few tens of percent of the dc component are observed. In order to regulate the emission current and suppress current fluctuations, a bias electrode in addition to a counterelectrode is placed close to the needle apex. With such a triode structure, the emission current is regulated by a bias voltage of several hundred volts and stabilized to within 1% by means of feedback to the bias voltage of a current monitor output

  20. Diurnal variation of methane emission from a paddy field in Brazilian Southeast

    Directory of Open Access Journals (Sweden)

    Magda Aparecida de Lima

    2018-04-01

    Full Text Available ABSTRACT: This study aimed to investigate the diurnal variation of methane (CH4 emission in a flooded-irrigated rice field at different stages of the plant development under tropical climate in three growing seasons, in order to determine the most appropriate time for gas sampling in the Brazilian Southeast region. It aimed also to verify correlations between CH4 flux and air, water and soil temperatures, and solar radiation. The CH4 emissions were measured every 3-hour interval on specific days in different development stages of the flooded rice in the Experiment Station of the Agência Paulista de Tecnologia dos Agronegócios (APTA, Pólo Regional Vale do Paraíba, at Pindamonhangaba, State of São Paulo (22°55’ S, 45°30’ W, Brazil. Different CH4 emission rates were observed among the plant growth stages and also among the growing seasons. The CH4 emission showed high correlation with the soil temperature at 2cm depth. At this depth, the CH4 emission activation energy in response to soil temperature was higher in the stage R2. Emission peaks were observed at afternoon, while lower fluxes were recorded at the early morning. The most appropriate local time for gas sampling was estimated at 12:11:15a.m.±01:14:16 and 09:05:49p.m.±01:29:04.