Advances in semiconductor photodetectors for scintillators

International Nuclear Information System (INIS)

Farrell, R.; Olschner, F.; Shah, K.; Squillante, M.R.

1997-01-01

Semiconductors photodetectors have long seemed an attractive alternative for scintillation detection, but only recently have semiconductor photodiodes been proven suitable for some room temperature applications. There are many applications, however for which the performance of standard silicon p-i-n photodiodes is not satisfactory. This article reviews recent progress in two different families of novel semiconductor photodetectors: (1) wide bandgap compound semiconductors and (2) silicon photodetectors with enhanced signal-to-noise ratio. The compounds discussed and compared in this paper are HgI 2 , PbI 2 , InI, TlBr, TlBr 1-x I x and HgBr 1-x I x . The paper will also examine unity gain silicon drift diodes and avalanche photodiodes with maximum room temperature gain greater than 10000. (orig.)

An improved PIN photodetector with integrated JFET on high-resistivity silicon

International Nuclear Information System (INIS)

Dalla Betta, Gian-Franco; Piemonte, Claudio; Boscardin, Maurizio; Gregori, Paolo; Zorzi, Nicola; Fazzi, Alberto; Pignatel, Giorgio U.

2006-01-01

We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed

Modeling and simulation of a 3D-CMOS silicon photodetector for low-intensity light detection

Science.gov (United States)

Sabri Alirezaei, Iman; Burte, Edmund P.

2016-03-01

This paper presents a design and simulation of a novel high performance 3D-silicon photodetector for implementing in the low intensity light detection at room temperature (300K). The photodetector is modeled by inspiration of general MEMS fabrication to make a 3D- structure in the silicon substrate using a bulk micromachining process, and based on a complementary metal-oxide semiconductor (CMOS) technology. The design includes a vertical n+/p junction as an optical window for lateral illumination. The simulation is carried out using COMSOL Multiphysics relying on theoretical and physical concepts, and then, the assessment of the results is done by the numerical analysis with SILVACO (Atlas) device simulator. Light is regarded as a monochromatic beam with a wavelength of 633nm that is placed 1μm far from the optical window. The simulation is considered under the reverse bias dc voltage in the steadystate. We present photocurrent-voltage (Iph-V) characteristics under different light intensities (2… 10[mW/cm2]), and dark current-voltage (Id-V) characteristics. Comparative studies of sensitivity dependence on the dopant concentration in the substrate as an intrinsic region are accomplished utilizing two different p-type silicon substrates with 1×1015 [1/cm3] and 4×1012 [1/cm3] doping concentration. Moreover, the sensitivity is evaluated with respect to the active substrate thickness. The simulated results confirmed that the high optical sensitivity of the photodetector with low dark current can be realized in this model.

Germanium photodetectors fabricated on 300 mm silicon wafers for near-infrared focal plane arrays

Science.gov (United States)

Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Sood, Ashok K.

2017-09-01

SiGe p-i-n photodetectors have been fabricated on 300 mm (12") diameter silicon (Si) wafers utilizing high throughput, large-area complementary metal-oxide semiconductor (CMOS) technologies. These Ge photodetectors are designed to operate in room temperature environments without cooling, and thus have potential size and cost advantages over conventional cooled infrared detectors. The two-step fabrication process for the p-i-n photodetector devices, designed to minimize the formation of defects and threading dislocations, involves low temperature epitaxial growth of a thin p+ (boron) Ge seed/buffer layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) demonstrated uniform layer compositions with well defined layer interfaces and reduced dislocation density. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) was likewise employed to analyze the doping levels of the p+ and n+ layers. Current-voltage (I-V) measurements demonstrated that these SiGe photodetectors, when exposed to incident visible-NIR radiation, exhibited dark currents down below 1 μA and significant enhancement in photocurrent at -1 V. The zero-bias photocurrent was also relatively high, showing a minimal drop compared to that at -1 V bias.

Silicon based near infrared photodetector using self-assembled organic crystalline nano-pillars

Energy Technology Data Exchange (ETDEWEB)

Ajiki, Yoshiharu, E-mail: yoshiharu-ajiki@ot.olympus.co.jp, E-mail: isao@i.u-tokyo.ac.jp [Micromachine Center, 67 Kanda Sakumagashi, Chiyoda-ku, Tokyo 100-0026 (Japan); Kan, Tetsuo [Department of Mechano-Informatics, Graduate School of Information Science and Technology, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Yahiro, Masayuki; Hamada, Akiko; Adachi, Chihaya [Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Adachi, Junji [Office for Strategic Research Planning, Kyushu University, 6-10-1 Hakozaki, Higashi, Fukuoka 812-8581 (Japan); Matsumoto, Kiyoshi [IRT Research Initiative, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Shimoyama, Isao, E-mail: yoshiharu-ajiki@ot.olympus.co.jp, E-mail: isao@i.u-tokyo.ac.jp [Department of Mechano-Informatics, Graduate School of Information Science and Technology, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); IRT Research Initiative, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan)

2016-04-11

We propose a silicon (Si) based near-infrared photodetector using self-assembled organic crystalline nano-pillars, which were formed on an n-type Si substrate and were covered with an Au thin-film. These structures act as antennas for near-infrared light, resulting in an enhancement of the light absorption on the Au film. Because the Schottky junction is formed between the Au/n-type Si, the electron excited by the absorbed light can be detected as photocurrent. The optical measurement revealed that the nano-pillar structures enhanced the responsivity for the near-infrared light by 89 (14.5 mA/W) and 16 (0.433 mA/W) times compared with those of the photodetector without nano-pillars at the wavelengths of 1.2 and 1.3 μm, respectively. Moreover, no polarization dependency of the responsivity was observed, and the acceptable incident angle ranged from 0° to 30°. These broad responses were likely to be due to the organic nano-pillar structures' having variation in their orientation, which is advantageous for near-infrared detector uses.

Photodetector based on carbon nanotubes

Science.gov (United States)

Pavlov, A.; Kitsyuk, E.; Ryazanov, R.; Timoshenkov, V.; Adamov, Y.

2015-09-01

Photodetector based on carbon nanotubes (CNT) was investigated. Sensors were done on quartz and silicon susbtrate. Samples of photodetectors sensors were produced by planar technology. This technology included deposition of first metal layer (Al), lithography for pads formation, etching, and formation of local catalyst area by inverse lithography. Vertically-aligned multi-wall carbon nanotubes were directly synthesized on substrate by PECVD method. I-V analysis and spectrum sensitivity of photodetector were investigated for 0.4 μm - 1.2 μm wavelength. Resistivity of CNT layers over temperature was detected in the range of -20°C to 100°C.

Evanescently Coupled Rectangular Microresonators in Silicon-on-Insulator with High Q-Values: Experimental Characterization

Directory of Open Access Journals (Sweden)

Manuel Mendez-Astudillo

2017-04-01

Full Text Available We report on evanescently coupled rectangular microresonators with dimensions up to 20 × 10 μm2 in silicon-on-insulator in an add-drop filter configuration. The influence of the geometrical parameters of the device was experimentally characterized and a high Q value of 13,000 was demonstrated as well as the multimode optical resonance characteristics in the drop port. We also show a 95% energy transfer between ports when the device is operated in TM-polarization and determine the full symmetry of the device by using an eight-port configuration, allowing the drop waveguide to be placed on any of its sides, providing a way to filter and route optical signals. We used the FDTD method to analyze the device and e-beam lithography and dry etching techniques for fabrication.

Development of analog solid-state photo-detectors for Positron Emission Tomography

International Nuclear Information System (INIS)

Bisogni, Maria Giuseppina; Morrocchi, Matteo

2016-01-01

Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

Development of analog solid-state photo-detectors for Positron Emission Tomography

Energy Technology Data Exchange (ETDEWEB)

Bisogni, Maria Giuseppina, E-mail: giuseppina.bisogni@pi.infn.it; Morrocchi, Matteo

2016-02-11

Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

International Nuclear Information System (INIS)

Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

2015-01-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

2015-10-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

Science.gov (United States)

Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

2015-11-11

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

Heterogenous integration of a thin-film GaAs photodetector and a microfluidic device on a silicon substrate

International Nuclear Information System (INIS)

Song, Fuchuan; Xiao, Jing; Udawala, Fidaali; Seo, Sang-Woo

2011-01-01

In this paper, heterogeneous integration of a III–V semiconductor thin-film photodetector (PD) with a microfluidic device is demonstrated on a SiO 2 –Si substrate. Thin-film format of optical devices provides an intimate integration of optical functions with microfluidic devices. As a demonstration of a multi-material and functional system, the biphasic flow structure in the polymeric microfluidic channels was co-integrated with a III–V semiconductor thin-film PD. The fluorescent drops formed in the microfluidic device are successfully detected with an integrated thin-film PD on a silicon substrate. The proposed three-dimensional integration structure is an alternative approach to combine optical functions with microfluidic functions on silicon-based electronic functions.

Enhanced photo-response of porous silicon photo-detectors by embeddingTitanium-dioxide nano-particles

Science.gov (United States)

Ali, Hiba M.; Makki, Sameer A.; Abd, Ahmed N.

2018-05-01

Porous silicon (n-PS) films can be prepared by photoelectochemical etching (PECE) Silicon chips n - types with 15 (mA / cm2), in 15 minutes etching time on the fabrication nano-sized pore arrangement. By using X-ray diffraction measurement and atomic power microscopy characteristics (AFM), PS was investigated. It was also evaluated the crystallites size from (XRD) for the PS nanoscale. The atomic force microscopy confirmed the nano-metric size chemical fictionalization through the electrochemical etching that was shown on the PS surface chemical composition. The atomic power microscopy checks showed the roughness of the silicon surface. It is also notified (TiO2) preparation nano-particles that were prepared by pulse laser eradication in ethanol (PLAL) technique through irradiation with a Nd:YAG laser pulses TiO2 target that is sunk in methanol using 400 mJ of laser energy. It has been studied the structural, optical and morphological of TiO2NPs. It has been detected that through XRD measurement, (TiO2) NPs have been Tetragonal crystal structure. While with AFM measurements, it has been realized that the synthesized TiO2 particles are spherical with an average particle size in the (82 nm) range. It has been determined that the energy band gap of TiO2 NPs from optical properties and set to be in (5eV) range.The transmittance and reflectance spectra have determined the TiO2 NPs optical constants. It was reported the effectiveness of TiO2 NPs expansion on the PS Photodetector properties which exposes the benefits in (Al/PS/Si/Al). The built-in tension values depend on the etching time current density and laser flounce. Al/TiO2/PS/Si/Al photo-detector heterojunction have two response peaks that are situated at 350 nm and (700 -800nm) with max sensitivity ≈ 0.7 A/W. The maximum given detectivity is 9.38at ≈ 780 nm wavelength.

Emerging terahertz photodetectors based on two-dimensional materials

Science.gov (United States)

Yang, Jie; Qin, Hua; Zhang, Kai

2018-01-01

Inspired by the innovations in photonics and nanotechnology, the remarkable properties of two-dimensional (2D) materials have renewed interest for the development of terahertz (THz) photodetectors. The versatility of these materials enables ultrafast and ultrasensitive photodetection of THz radiation at room temperature. The atomically thin characteristic together with van der Waals interactions among the layers make it easy to scaling down and integrate with other 2D materials based devices, as well as silicon chips. Efforts have increased fast in the past decade in developing proof-of-concept and the further prospective THz photodetectors based on 2D materials. Here, the recent progress on the exploring of THz photodetectors based on 2D materials is reviewed. We summarized the THz photodetectors under different physical mechanism and introduced the state-of-the-art THz photodetectors based on various promising 2D materials, such as graphene, transition metal dichalcogenides (TMDCs), black phosphorus (BP) and topological insulators (TIs). A brief discussion on the remaining challenges and a perspective of the 2D materials based THz photodetectors are also given.

Mode-locked silicon evanescent lasers.

Science.gov (United States)

Koch, Brian R; Fang, Alexander W; Cohen, Oded; Bowers, John E

2007-09-03

We demonstrate electrically pumped lasers on silicon that produce pulses at repetition rates up to 40 GHz. The mode locked lasers generate 4 ps pulses with low jitter and extinction ratios above 18 dB, making them suitable for data and telecommunication transmitters and for clock generation and distribution. Results of both passive and hybrid mode locking are discussed. This type of device could enable new silicon based integrated technologies, such as optical time division multiplexing (OTDM), wavelength division multiplexing (WDM), and optical code division multiple access (OCDMA).

Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect.

Science.gov (United States)

Wang, Zhaona; Yu, Ruomeng; Wen, Xiaonan; Liu, Ying; Pan, Caofeng; Wu, Wenzhuo; Wang, Zhong Lin

2014-12-23

Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

Science.gov (United States)

Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

2005-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Integrated silicon optoelectronics

CERN Document Server

Zimmermann, Horst

2000-01-01

'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

Photocurrent enhancement of graphene photodetectors by photon tunneling of light into surface plasmons

Science.gov (United States)

Maleki, Alireza; Cumming, Benjamin P.; Gu, Min; Downes, James E.; Coutts, David W.; Dawes, Judith M.

2017-10-01

We demonstrate that surface plasmon resonances excited by photon tunneling through an adjacent dielectric medium enhance the photocurrent detected by a graphene photodetector. The device is created by overlaying a graphene sheet over an etched gap in a gold film deposited on glass. The detected photocurrents are compared for five different excitation wavelengths, ranging from {λ }0=570 {{nm}} to {λ }0=730 {{nm}}. Although the device is not optimized, the photocurrent excited with incident p-polarized light (which excites resonant surface plasmons) is significantly amplified in comparison with that for s-polarized light (without surface plasmon resonances). We observe that the photocurrent is greater for shorter wavelengths (for both s- and p-polarizations) with increased photothermal current. Position-dependent Raman spectroscopic analysis of the optically-excited graphene photodetector indicates the presence of charge carriers in the graphene near the metallic edge. In addition, we show that the polarity of the photocurrent reverses across the gap as the incident light spot moves across the gap. Graphene-based photodetectors offer a simple architecture which can be fabricated on dielectric waveguides to exploit the plasmonic photocurrent enhancement of the evanescent field. Applications for these devices include photodetection, optical sensing and direct plasmonic detection.

High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes.

Science.gov (United States)

Shen, Jun; Liu, Xiangzhi; Song, Xuefen; Li, Xinming; Wang, Jun; Zhou, Quan; Luo, Shi; Feng, Wenlin; Wei, Xingzhan; Lu, Shirong; Feng, Shuanglong; Du, Chunlei; Wang, Yuefeng; Shi, Haofei; Wei, Dapeng

2017-05-11

Schottky heterojunctions based on graphene-silicon structures are promising for high-performance photodetectors. However, existing fabrication processes adopt transferred graphene as electrodes, limiting process compatibility and generating pollution because of the metal catalyst. In this report, photodetectors are fabricated using directly grown graphene nanowalls (GNWs) as electrodes. Due to the metal-free growth process, GNWs-Si heterojunctions with an ultralow measured current noise of 3.1 fA Hz -1/2 are obtained, and the as-prepared photodetectors demonstrate specific detectivities of 5.88 × 10 13 cm Hz 1/2 W -1 and 2.27 × 10 14 cm Hz 1/2 W -1 based on the measured and calculated noise current, respectively, under ambient conditions. These are among the highest reported values for planar silicon Schottky photodetectors. In addition, an on/off ratio of 2 × 10 7 , time response of 40 μs, cut-off frequency of 8.5 kHz and responsivity of 0.52 A W -1 are simultaneously realized. The ultralow current noise is attributed to the excellent junction quality with a barrier height of 0.69 eV and an ideal factor of 1.18. Furthermore, obvious infrared photoresponse is observed in blackbody tests, and potential applications based on the photo-thermionic effect are discussed.

Responsivity Dependent Anodization Current Density of Nanoporous Silicon Based MSM Photodetector

Directory of Open Access Journals (Sweden)

Batool Eneaze B. Al-Jumaili

2016-01-01

Full Text Available Achieving a cheap and ultrafast metal-semiconductor-metal (MSM photodetector (PD for very high-speed communications is ever-demanding. We report the influence of anodization current density variation on the response of nanoporous silicon (NPSi based MSM PD with platinum (Pt contact electrodes. Such NPSi samples are grown from n-type Si (100 wafer using photoelectrochemical etching with three different anodization current densities. FESEM images of as-prepared samples revealed the existence of discrete pores with spherical and square-like shapes. XRD pattern displayed the growth of nanocrystals with (311 lattice orientation. The nanocrystallite sizes obtained using Scherrer formula are found to be between 20.8 nm and 28.6 nm. The observed rectifying behavior in the I-V characteristics is ascribed to the Pt/PSi/n-Si Schottky barrier formation, where the barrier height at the Pt/PSi interface is estimated to be 0.69 eV. Furthermore, this Pt/PSi/Pt MSM PD achieved maximum responsivity of 0.17 A/W and quantum efficiency as much as 39.3%. The photoresponse of this NPSi based MSM PD demonstrated excellent repeatability, fast response, and enhanced saturation current with increasing anodization current density.

Wigner functions for evanescent waves.

Science.gov (United States)

Petruccelli, Jonathan C; Tian, Lei; Oh, Se Baek; Barbastathis, George

2012-09-01

We propose phase space distributions, based on an extension of the Wigner distribution function, to describe fields of any state of coherence that contain evanescent components emitted into a half-space. The evanescent components of the field are described in an optical phase space of spatial position and complex-valued angle. Behavior of these distributions upon propagation is also considered, where the rapid decay of the evanescent components is associated with the exponential decay of the associated phase space distributions. To demonstrate the structure and behavior of these distributions, we consider the fields generated from total internal reflection of a Gaussian Schell-model beam at a planar interface.

Varactor-tuned Substrate Integrated Evanescent Filter

DEFF Research Database (Denmark)

Zhurbenko, Vitaliy; Acar, Öncel; Dong, Yunfeng

Evanescent mode waveguides allow for more compact microwave component design in comparison to the traditional fundamental mode waveguide technology. Evanescent waveguides can be integrated into a dielectric substrate in order to further reduce the mass and volume. Unfortunately, traditional...... realization methods used in the standard evanescent waveguides are often not directly applicable to substrate integrated waveguide (SIW) technology due to dielectric filling and small height of the waveguide. In this work, one of the realization methods of evanescent waveguides using lumped elements...... is considered. In contrast to other methods described in the literature, it avoids etching split ring resonators in the metal layer of the SIW. The filters presented here use varactors as tuning elements. The varactors (as well as DC decoupling circuits) are mounted on the surface of PCB bringing the lower...

Core-shell heterojunction of silicon nanowire arrays and carbon quantum dots for photovoltaic devices and self-driven photodetectors.

Science.gov (United States)

Xie, Chao; Nie, Biao; Zeng, Longhui; Liang, Feng-Xia; Wang, Ming-Zheng; Luo, Linbao; Feng, Mei; Yu, Yongqiang; Wu, Chun-Yan; Wu, Yucheng; Yu, Shu-Hong

2014-04-22

Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.

Heterojunction photodetector based on graphene oxide sandwiched between ITO and p-Si

Science.gov (United States)

Ahmad, H.; Tajdidzadeh, M.; Thandavan, T. M. K.

2018-02-01

The drop casting method is utilized on indium tin oxide (ITO)-coated glass in order to prepare a sandwiched ITO/graphene oxide (ITO/GO) with silicon dioxide/p-type silicon (SiO2/p-Si) heterojunction photodetector. The partially sandwiched GO layer with SiO2/p-Si substrate exhibits dual characteristics as it showed good sensitivity towards the illumination of infrared (IR) laser at wavelength of 974 nm. Excellent photoconduction is also observed for current-voltage (I-V) characteristics at various laser powers. An external quantum efficiency greater than 1 for a direct current bias voltage of 0 and 3 V reveals significant photoresponsivity of the photodetector at various laser frequency modulation at 1, 5 and 9 Hz. The rise times are found to be 75, 72 and 70 μs for 1, 5 and 9 Hz while high fall times 455, 448 and 426 are measured for the respective frequency modulation. The fabricated ITO/GO-SiO2/p-Si sandwiched heterojunction photodetector can be considered as a good candidate for applications in the IR regions that do not require a high-speed response.

Proposal of a broadband, polarization-insensitive and high-efficiency hot-carrier schottky photodetector integrated with a plasmonic silicon ridge waveguide

International Nuclear Information System (INIS)

Yang, Liu; Kou, Pengfei; Shen, Jianqi; Lee, El Hang; He, Sailing

2015-01-01

We propose a broadband, polarization-insensitive and high-efficiency plasmonic Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission (IPE). The distinctive features of this design are that it has a gold film covering both the top and the sidewalls of a dielectric silicon ridge waveguide with the Schottky contact formed at the gold–silicon interface and the sidewall coverage of gold can be easily tuned by an insulating layer. An extensive physical model on IPE of hot carriers is presented in detail and is applied to calculate and examine the performance of this detector. In comparison with a diode having only the top gold contact, the polarization sensitivity of the responsivity is greatly minimized in our photodetector with gold film covering both the top and the sidewall. Much higher responsivities for both polarizations are also achieved over a broad wavelength range of 1.2–1.6 μm. Moreover, the Schottky contact is only 4 μm long, leading to a very small dark current. Our design is very promising for practical applications in high-density silicon photonic integration. (paper)

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

High-efficient solar cells with porous silicon

International Nuclear Information System (INIS)

Migunova, A.A.

2002-01-01

It has been shown that the porous silicon is multifunctional high-efficient coating on silicon solar cells, modifies its surface and combines in it self antireflection and passivation properties., The different optoelectronic effects in solar cells with porous silicon were considered. The comparative parameters of uncovered photodetectors also solar cells with porous silicon and other coatings were resulted. (author)

InP on SOI devices for optical communication and optical network on chip

Science.gov (United States)

Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

2011-01-01

For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

Science.gov (United States)

Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

2017-11-01

In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

Directory of Open Access Journals (Sweden)

Abd Rahim Alhan Farhanah

2017-01-01

Full Text Available In this paper, an investigation of design and simulation of silicon germanium (SiGe islands on silicon (Si was presented for potential visible metal semiconductor metal (MSM photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD tools. The different structures of the silicon germanium (SiGe island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM photodetector was evaluated by photo and dark current-voltage (I-V characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

Tunable Resonant-Cavity-Enhanced Photodetector with Double High-Index-Contrast Grating Mirrors

DEFF Research Database (Denmark)

Learkthanakhachon, Supannee; Yvind, Kresten; Chung, Il-Sug

2013-01-01

In this paper, we propose a broadband-tunable resonant-cavity-enhanced photodetector (RCE-PD) structure with double high-index-contrast grating (HCG) mirrors and numerically investigate its characteristics. The detector is designed to operate at 1550-nm wavelength. The detector structure consists....... Furthermore, the fact that it can be fabricated on a silicon platform offers us a possibility of integration with electronics.......In this paper, we propose a broadband-tunable resonant-cavity-enhanced photodetector (RCE-PD) structure with double high-index-contrast grating (HCG) mirrors and numerically investigate its characteristics. The detector is designed to operate at 1550-nm wavelength. The detector structure consists...... of a top InP HCG mirror, a p-i-n photodiode embedding multiple quantum wells, and a Si HCG mirror formed in the Si layer of a silicon-on-insulator wafer. The detection wavelength can be changed by moving the top InP HCG mirror suspended in the air. High reflectivity and small penetration length of HCGs...

Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

Energy Technology Data Exchange (ETDEWEB)

Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

2016-09-15

In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

The controlled growth of graphene nanowalls on Si for Schottky photodetector

Directory of Open Access Journals (Sweden)

Quan Zhou

2017-12-01

Full Text Available Schottky diode with directly-grown graphene on silicon substrate has advantage of clean junction interface, promising for photodetectors with high-speed and low noise. In this report, we carefully studied the influence of growth parameters on the junction quality and photoresponse of graphene nanowalls (GNWs-based Schottky photodetectors. We found that shorter growth time is critical for lower dark current, but at the same time higher photocurrent. The influence of growth parameters was attributed to the defect density of various growth time, which results in different degrees of surface absorption for H2O/O2 molecules and P-type doping level. Raman characterization and vacuum annealing treatment were carried out to confirm the regulation mechanism. Meanwhile, the release of thermal stress also makes the ideality factor η of thinner sample better than the thicker. Our results are important for the response improvement of photodetectors with graphene-Si schottky junction.

Evanescent fields of laser written waveguides

Science.gov (United States)

Jukić, Dario; Pohl, Thomas; Götte, Jörg B.

2015-03-01

We investigate the evanescent field at the surface of laser written waveguides. The waveguides are written by a direct femtosecond laser writing process into fused silica, which is then sanded down to expose the guiding layer. These waveguides support eigenmodes which have an evanescent field reaching into the vacuum above the waveguide. We study the governing wave equations and present solution for the fundamental eigenmodes of the modified waveguides.

Metal-insulator-semiconductor photodetectors.

Science.gov (United States)

Lin, Chu-Hsuan; Liu, Chee Wee

2010-01-01

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Metal-Insulator-Semiconductor Photodetectors

Directory of Open Access Journals (Sweden)

Chu-Hsuan Lin

2010-09-01

Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1-xN Buffer Layer.

Science.gov (United States)

Lee, Chang-Ju; Won, Chul-Ho; Lee, Jung-Hee; Hahm, Sung-Ho; Park, Hongsik

2017-07-21

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded Al x Ga -x N buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded Al x Ga 1-x N buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10 - ² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

The mid-IR silicon photonics sensor platform (Conference Presentation)

Science.gov (United States)

Kimerling, Lionel; Hu, Juejun; Agarwal, Anuradha M.

2017-02-01

Advances in integrated silicon photonics are enabling highly connected sensor networks that offer sensitivity, selectivity and pattern recognition. Cost, performance and the evolution path of the so-called `Internet of Things' will gate the proliferation of these networks. The wavelength spectral range of 3-8um, commonly known as the mid-IR, is critical to specificity for sensors that identify materials by detection of local vibrational modes, reflectivity and thermal emission. For ubiquitous sensing applications in this regime, the sensors must move from premium to commodity level manufacturing volumes and cost. Scaling performance/cost is critically dependent on establishing a minimum set of platform attributes for point, wearable, and physical sensing. Optical sensors are ideal for non-invasive applications. Optical sensor device physics involves evanescent or intra-cavity structures for applied to concentration, interrogation and photo-catalysis functions. The ultimate utility of a platform is dependent on sample delivery/presentation modalities; system reset, recalibration and maintenance capabilities; and sensitivity and selectivity performance. The attributes and performance of a unified Glass-on-Silicon platform has shown good prospects for heterogeneous integration on materials and devices using a low cost process flow. Integrated, single mode, silicon photonic platforms offer significant performance and cost advantages, but they require discovery and qualification of new materials and process integration schemes for the mid-IR. Waveguide integrated light sources based on rare earth dopants and Ge-pumped frequency combs have promise. Optical resonators and waveguide spirals can enhance sensitivity. PbTe materials are among the best choices for a standard, waveguide integrated photodetector. Chalcogenide glasses are capable of transmitting mid-IR signals with high transparency. Integrated sensor case studies of i) high sensitivity analyte detection in

Analytical scanning evanescent microwave microscope and control stage

Science.gov (United States)

Xiang, Xiao-Dong; Gao, Chen; Duewer, Fred; Yang, Hai Tao; Lu, Yalin

2009-06-23

A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

Long-wavelength III-V/silicon photonic integrated circuits

NARCIS (Netherlands)

Roelkens, G.C.; Kuyken, B.; Leo, F.; Hattasan, N.; Ryckeboer, E.M.P.; Muneeb, M.; Hu, C.L.; Malik, A.; Hens, Z.; Baets, R.G.F.; Shimura, Y.; Gencarelli, F.; Vincent, B.; Loo, van de R.; Verheyen, P.A.; Lepage, G.; Campenhout, van J.; Cerutti, L.; Rodriquez, J.B.; Tournie, E.; Chen, X; Nedeljkovic, G.; Mashanovich, G.; Liu, X.; Green, W.S.

2013-01-01

We review our work in the field of short-wave infrared and mid-infrared photonic integrated circuits for applications in spectroscopic sensing systems. Passive silicon waveguide circuits, GeSn photodetectors, the integration of III-V and IV-VI semiconductors on these circuits, and silicon nonlinear

An Evanescent Field Optical Microscope. Scanning probe Microscopy

NARCIS (Netherlands)

van Hulst, N.F.; Segerink, Franciscus B.; Bölger, B.; Bölger, B.; Wickramasinghe, H. Kumar

1991-01-01

An Evanescent Field Optical Microscope (EFOM) is presented, which employs frustrated total internal reflection on a highly localized scale by means of a sharp dielectric tip. The coupling of the evanescent field to the sub-micrometer probe as a function of probe-sample distance, angle of incidence

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

Directory of Open Access Journals (Sweden)

Chang-Ju Lee

2017-07-01

Full Text Available The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded AlxGa−xN buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded AlxGa1−xN buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10−2 A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

Evanescent waves in optics an introduction to plasmonics

CERN Document Server

Bertolotti, Mario; M Guzman, Angela

2017-01-01

This monograph provides an introductory discussion of evanescent waves and plasmons, describes their properties and uses, and shows how they are fundamental when operating with nanoscale optics. Far field optics is not suitable for the design, description, and operation of devices at this nanometre scale. Instead one must work with models based on near-field optics and surface evanescent waves. The new discipline of plasmonics has grown to encompass the generation and application of plasmons both as a travelling excitation in a nanostructure and as a stationary enhancement of the electrical field near metal nanosurfaces. The book begins with a brief review of the basic concepts of electromagnetism, then introduces evanescent waves through reflection and refraction, and shows how they appear in diffraction problems, before discussing the role that they play in optical waveguides and sensors. The application of evanescent waves in super-resolution devices is briefly presented, before plasmons are introduced. Th...

Fiber-optic evanescent-field sensor for attitude measurement

Science.gov (United States)

Liu, Yun; Chen, Shimeng; Liu, Zigeng; Guang, Jianye; Peng, Wei

2017-11-01

We proposed a new approach to attitude measurement by an evanescent field-based optical fiber sensing device and demonstrated a liquid pendulum. The device consisted of three fiber-optic evanescent-filed sensors which were fabricated by tapered single mode fibers and immersed in liquid. Three fiber Bragg gratings were used to measure the changes in evanescent field. And their reflection peaks were monitored in real time as measurement signals. Because every set of reflection responses corresponded to a unique attitude, the attitude of the device could be measured by the three fiber-optic evanescent-filed sensors. After theoretical analysis, computerized simulation and experimental verification, regular responses were obtained using this device for attitude measurement. The measurement ranges of dihedral angle and direction angle were 0°-50° and 0°-360°. The device is based on cost-effective power-referenced scheme. It can be used in electromagnetic or nuclear radiation environment.

Substrate Integrated Evanescent Filters Employing Coaxial Stubs

DEFF Research Database (Denmark)

Zhurbenko, Vitaliy

2015-01-01

Evanescent mode substrate integrated waveguide (SIW) is one of the promising technologies for design of light-weight low-cost microwave components. Traditional realization methods used in the standard evanescent waveguide technology are often not directly applicable to SIW due to dielectric filli...... of the microwave filter are discussed. The approach is useful in applications where a sharp roll-off at the upper stop-band is required....

Traveling-wave photodetector

Science.gov (United States)

Hietala, V.M.; Vawter, G.A.

1993-12-14

The traveling-wave photodetector of the present invention combines an absorptive optical waveguide and an electrical transmission line, in which optical absorption in the waveguide results in a photocurrent at the electrodes of the electrical transmission line. The optical waveguide and electrical transmission line of the electrically distributed traveling-wave photodetector are designed to achieve matched velocities between the light in the optical waveguide and electrical signal generated on the transmission line. This velocity synchronization provides the traveling-wave photodetector with a large electrical bandwidth and a high quantum efficiency, because of the effective extended volume for optical absorption. The traveling-wave photodetector also provides large power dissipation, because of its large physical size. 4 figures.

Colloidal quantum dot photodetectors

KAUST Repository

Konstantatos, Gerasimos

2011-05-01

We review recent progress in light sensors based on solution-processed materials. Spin-coated semiconductors can readily be integrated with many substrates including as a post-process atop CMOS silicon and flexible electronics. We focus in particular on visible-, near-infrared, and short-wavelength infrared photodetectors based on size-effect-tuned semiconductor nanoparticles made using quantum-confined PbS, PbSe, Bi 2S3, and In2S3. These devices have in recent years achieved room-temperature D values above 1013 Jones, while fully-depleted photodiodes based on these same materials have achieved MHz response combined with 1012 Jones sensitivities. We discuss the nanoparticle synthesis, the materials processing, integrability, temperature stability, physical operation, and applied performance of this class of devices. © 2010 Elsevier Ltd. All rights reserved.

Fiber optic evanescent wave biosensor

Science.gov (United States)

Duveneck, Gert L.; Ehrat, Markus; Widmer, H. M.

1991-09-01

The role of modern analytical chemistry is not restricted to quality control and environmental surveillance, but has been extended to process control using on-line analytical techniques. Besides industrial applications, highly specific, ultra-sensitive biochemical analysis becomes increasingly important as a diagnostic tool, both in central clinical laboratories and in the doctor's office. Fiber optic sensor technology can fulfill many of the requirements for both types of applications. As an example, the experimental arrangement of a fiber optic sensor for biochemical affinity assays is presented. The evanescent electromagnetic field, associated with a light ray guided in an optical fiber, is used for the excitation of luminescence labels attached to the biomolecules in solution to be analyzed. Due to the small penetration depth of the evanescent field into the medium, the generation of luminescence is restricted to the close proximity of the fiber, where, e.g., the luminescent analyte molecules combine with their affinity partners, which are immobilized on the fiber. Both cw- and pulsed light excitation can be used in evanescent wave sensor technology, enabling the on-line observation of an affinity assay on a macroscopic time scale (seconds and minutes), as well as on a microscopic, molecular time scale (nanoseconds or microseconds).

Nanoparticle sorting in silicon waveguide arrays

Science.gov (United States)

Zhao, H. T.; Zhang, Y.; Chin, L. K.; Yap, P. H.; Wang, K.; Ser, W.; Liu, A. Q.

2017-08-01

This paper presents the optical fractionation of nanoparticles in silicon waveguide arrays. The optical lattice is generated by evanescent coupling in silicon waveguide arrays. The hotspot size is tunable by changing the refractive index of surrounding liquids. In the experiment, 0.2-μm and 0.5-μm particles are separated with a recovery rate of 95.76%. This near-field approach is a promising candidate for manipulating nanoscale biomolecules and is anticipated to benefit the biomedical applications such as exosome purification, DNA optical mapping, cell-cell interaction, etc.

Fast wave evanescence in filamentary boundary plasmas

International Nuclear Information System (INIS)

Myra, J. R.

2014-01-01

Radio frequency waves for heating and current drive of plasmas in tokamaks and other magnetic confinement devices must first traverse the scrape-off-layer (SOL) before they can be put to their intended use. The SOL plasma is strongly turbulent and intermittent in space and time. These turbulent properties of the SOL, which are not routinely taken into account in wave propagation codes, can have an important effect on the coupling of waves through an evanescent SOL or edge plasma region. The effective scale length for fast wave (FW) evanescence in the presence of short-scale field-aligned filamentary plasma turbulence is addressed in this paper. It is shown that although the FW wavelength or evanescent scale length is long compared with the dimensions of the turbulence, the FW does not simply average over the turbulent density; rather, the average is over the exponentiation rate. Implications for practical situations are discussed

Silicon photonics fundamentals and devices

CERN Document Server

Deen, M Jamal

2012-01-01

The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

Analysis of photon statistics with Silicon Photomultiplier

International Nuclear Information System (INIS)

D'Ascenzo, N.; Saveliev, V.; Wang, L.; Xie, Q.

2015-01-01

The Silicon Photomultiplier (SiPM) is a novel silicon-based photodetector, which represents the modern perspective of low photon flux detection. The aim of this paper is to provide an introduction on the statistical analysis methods needed to understand and estimate in quantitative way the correct features and description of the response of the SiPM to a coherent source of light

Study of SiPM as a potential photodetector for scintillator readout

International Nuclear Information System (INIS)

Herbert, D.J.; D'Ascenzo, N.; Belcari, N.; Del Guerra, A.; Morsani, F.; Saveliev, V.

2006-01-01

The Silicon PhotoMultiplier (SiPM) APD represents an interesting advance in photodetection and could soon be a rival to traditional PMTs in many applications. The SiPM is effectively a densely packed 2D array of Geiger-mode APD microcells, each having individual resistive quenching and multiplexed outputs. In this way the SiPM acts as a linear, high-gain photodetector for moderate photon flux (N photon cells ). The Metal-Resistor-Silicon (MRS) structure SiPM, produced by CPTA Russia, has been characterised and tested for scintillator light detection in medical applications such as PET. We present a summary of measurements of the device's primary operating characteristics and results of the application to scintillator readout

Thermal transport contributed by the torsional phonons in cylindrical nanowires: Role of evanescent modes

International Nuclear Information System (INIS)

Xie, Zhong-Xiang; Zhang, Yong; Zhang, Li-Fu; Fan, Dian-Yuan

2017-01-01

Thermal transport contributed by the torsional phonons in cylindrical nanowires is investigated by using the isotropic elastic continuum theory. The numerical calculations for both the concavity-shaped and convexity-shaped cylindrical structures are made to reveal the role of the evanescent modes. Results show that the evanescent modes play an important role in influencing the thermal transport in such structures. For the concavity-shaped cylindrical nanowire, the evanescent modes can enhance the thermal conductance by about 20 percent, while for the convexity-shaped cylindrical nanowire, the evanescent modes can suppress the thermal conductance by 6 percent. It is also shown that the influence of the evanescent modes on the thermal conductance is strongly related to the attenuation length of the evanescent modes. A brief analysis of these results is given. - Highlights: • The evanescent modes play an important role in influencing thermal transport contributed by torsional phonons in cylindrical nanowires. • For the concavity-shaped cylindrical nanowire, the evanescent modes can enhance the thermal conductance by about 20 percent, while for the convexity-shaped cylindrical nanowire, they can suppress the thermal conductance by 6 percent.

Thermal transport contributed by the torsional phonons in cylindrical nanowires: Role of evanescent modes

Energy Technology Data Exchange (ETDEWEB)

Xie, Zhong-Xiang [SZU-NUS Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002 (China); Zhang, Yong [Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002 (China); Zhang, Li-Fu, E-mail: zhanglifu68@hotmail.com [SZU-NUS Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Fan, Dian-Yuan [SZU-NUS Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China)

2017-05-03

Thermal transport contributed by the torsional phonons in cylindrical nanowires is investigated by using the isotropic elastic continuum theory. The numerical calculations for both the concavity-shaped and convexity-shaped cylindrical structures are made to reveal the role of the evanescent modes. Results show that the evanescent modes play an important role in influencing the thermal transport in such structures. For the concavity-shaped cylindrical nanowire, the evanescent modes can enhance the thermal conductance by about 20 percent, while for the convexity-shaped cylindrical nanowire, the evanescent modes can suppress the thermal conductance by 6 percent. It is also shown that the influence of the evanescent modes on the thermal conductance is strongly related to the attenuation length of the evanescent modes. A brief analysis of these results is given. - Highlights: • The evanescent modes play an important role in influencing thermal transport contributed by torsional phonons in cylindrical nanowires. • For the concavity-shaped cylindrical nanowire, the evanescent modes can enhance the thermal conductance by about 20 percent, while for the convexity-shaped cylindrical nanowire, they can suppress the thermal conductance by 6 percent.

Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Carey, JE; Mazur, E

2005-05-19

With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

Hybrid Organic-Inorganic Perovskite Photodetectors.

Science.gov (United States)

Tian, Wei; Zhou, Huanping; Li, Liang

2017-11-01

Hybrid organic-inorganic perovskite materials garner enormous attention for a wide range of optoelectronic devices. Due to their attractive optical and electrical properties including high optical absorption coefficient, high carrier mobility, and long carrier diffusion length, perovskites have opened up a great opportunity for high performance photodetectors. This review aims to give a comprehensive summary of the significant results on perovskite-based photodetectors, focusing on the relationship among the perovskite structures, device configurations, and photodetecting performances. An introduction of recent progress in various perovskite structure-based photodetectors is provided. The emphasis is placed on the correlation between the perovskite structure and the device performance. Next, recent developments of bandgap-tunable perovskite and hybrid photodetectors built from perovskite heterostructures are highlighted. Then, effective approaches to enhance the stability of perovskite photodetector are presented, followed by the introduction of flexible and self-powered perovskite photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. A comprehensive summary of the research status on perovskite photodetectors is hoped to push forward the development of this field. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Latest generation of ASICs for photodetector readout

Science.gov (United States)

Seguin-Moreau, N.

2013-08-01

The OMEGA microelectronics group has designed a new generation of multichannel integrated circuits, the "ROC" family, in AustrianMicroSystem (AMS) SiGe 0.35 μm technology to read out signals from various families of photodetectors. The chip named MAROC (standing for Multi Anode ReadOut Chip) has been designed to read out MultiAnode Photomultipliers (MAPMT), Photomultiplier ARray In SiGe ReadOut Chip (PARISROC) to read out Photomultipliers (PMTs) and SiPM Integrated ReadOut Chip (SPIROC) to readout Silicon PhotoMultiplier (SiPM) detectors and which was the first ASIC to do so. The three of them fulfill the stringent requirements of the future photodetectors, in particular in terms of low noise, radiation hardness, large dynamic range, high density and high speed while keeping low power thanks to the SiGe technology. These multi-channel ASICs are real System on Chip (SoC) as they provide charge, time and photon-counting information which are digitized internally. Their complexity and versatility enable innovative frontier detectors and also cover spin off of these detectors in adjacent fields such as medical or material imaging as well as smart detectors. In this presentation, the three ASIC architectures and test results will be described to give a general panorama of the "ROC" chips.

Latest generation of ASICs for photodetector readout

Energy Technology Data Exchange (ETDEWEB)

Seguin-Moreau, N., E-mail: seguin@lal.in2p3.fr [Laboratoire de l’Accélérateur Linéaire, IN2P3-CNRS, Université Paris-Sud, Bâtiment 200, 91898 Orsay Cedex (France)

2013-08-01

The OMEGA microelectronics group has designed a new generation of multichannel integrated circuits, the “ROC” family, in AustrianMicroSystem (AMS) SiGe 0.35 μm technology to read out signals from various families of photodetectors. The chip named MAROC (standing for Multi Anode ReadOut Chip) has been designed to read out MultiAnode Photomultipliers (MAPMT), Photomultiplier ARray In SiGe ReadOut Chip (PARISROC) to read out Photomultipliers (PMTs) and SiPM Integrated ReadOut Chip (SPIROC) to readout Silicon PhotoMultiplier (SiPM) detectors and which was the first ASIC to do so. The three of them fulfill the stringent requirements of the future photodetectors, in particular in terms of low noise, radiation hardness, large dynamic range, high density and high speed while keeping low power thanks to the SiGe technology. These multi-channel ASICs are real System on Chip (SoC) as they provide charge, time and photon-counting information which are digitized internally. Their complexity and versatility enable innovative frontier detectors and also cover spin off of these detectors in adjacent fields such as medical or material imaging as well as smart detectors. In this presentation, the three ASIC architectures and test results will be described to give a general panorama of the “ROC” chips.

Latest generation of ASICs for photodetector readout

International Nuclear Information System (INIS)

Seguin-Moreau, N.

2013-01-01

The OMEGA microelectronics group has designed a new generation of multichannel integrated circuits, the “ROC” family, in AustrianMicroSystem (AMS) SiGe 0.35 μm technology to read out signals from various families of photodetectors. The chip named MAROC (standing for Multi Anode ReadOut Chip) has been designed to read out MultiAnode Photomultipliers (MAPMT), Photomultiplier ARray In SiGe ReadOut Chip (PARISROC) to read out Photomultipliers (PMTs) and SiPM Integrated ReadOut Chip (SPIROC) to readout Silicon PhotoMultiplier (SiPM) detectors and which was the first ASIC to do so. The three of them fulfill the stringent requirements of the future photodetectors, in particular in terms of low noise, radiation hardness, large dynamic range, high density and high speed while keeping low power thanks to the SiGe technology. These multi-channel ASICs are real System on Chip (SoC) as they provide charge, time and photon-counting information which are digitized internally. Their complexity and versatility enable innovative frontier detectors and also cover spin off of these detectors in adjacent fields such as medical or material imaging as well as smart detectors. In this presentation, the three ASIC architectures and test results will be described to give a general panorama of the “ROC” chips

Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions

Energy Technology Data Exchange (ETDEWEB)

Cheng, Ching-Cheng; Liao, Yu-Ming; Chen, Yang-Fang, E-mail: yfchen@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Zhan, Jun-Yu; Lin, Tai-Yuan [Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 202, Taiwan (China); Hsieh, Ya-Ping [Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 621, Taiwan (China)

2016-08-01

A self-powered photodetector with ultrahigh sensitivity, fast photoresponse, and wide spectral detectivity covering from 1000 nm to 400 nm based on graphene/ZnO/Si triple junctions has been designed, fabricated, and demonstrated. In this device, graphene serves as a transparent electrode as well as an efficient collection layer for photogenerated carriers due to its excellent tunability of Fermi energy. The ZnO layer acts as an antireflection layer to trap the incident light and enhance the light absorption. Furthermore, the insertion of the ZnO layer in between graphene and Si layers can create build-in electric field at both graphene/ZnO and ZnO/Si interfaces, which can greatly enhance the charge separation of photogenerated electron and hole pairs. As a result, the sensitivity and response time can be significantly improved. It is believed that our methodology for achieving a high-performance self-powered photodetector based on an appropriate design of band alignment and optical parameters can be implemented to many other material systems, which can be used to generate unique optoelectronic devices for practical applications.

Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

Directory of Open Access Journals (Sweden)

Cheng Chuantong

2017-07-01

Full Text Available Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

Science.gov (United States)

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-07-01

Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

The recent development and study of silicon photomultiplier

International Nuclear Information System (INIS)

Saveliev, Valeri

2004-01-01

Recent developments and results from the study of a Silicon Solid State Photomultiplier (Si-PM) are presented. The basis of this new type of photodetector is a fine structure of microcells operating in the Geiger mode with an internal gain greater than 106. Common signal output allows for the detector to be operated in the proportional mode, and to reach a dynamic range of 1.5x103. Such photodetectors have shown single photon response at room temperature with a fast timing of ∼100ps. They are compact, robust and non-sensitive to magnetic fields. Results show the detection of low-intensity light in single photon mode and the detection of minimal ionizing particles using a scintillation tile for hadron calorimetry. The silicon photomultiplier is suitable for wide application in scintillation calorimetry, medical application, etc

Annealing Time Effect on Nanostructured n-ZnO/p-Si Heterojunction Photodetector Performance

Science.gov (United States)

Habubi, Nadir. F.; Ismail, Raid. A.; Hamoudi, Walid K.; Abid, Hassam. R.

2015-02-01

In this work, n-ZnO/p-Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15-60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm-99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm-2.16 nm. Dark and under illumination current-voltage (I-V) characteristics of the n-ZnO/p-Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance-voltage (C-V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO/Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12-0.19 A/W and 0.18-0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

A cost-effective LED and photodetector based fast direct 3D diffuse optical imaging system

Science.gov (United States)

Saikia, Manob Jyoti; Manjappa, Rakesh; Kanhirodan, Rajan

2017-07-01

A cost-effective and high-speed 3D diffuse optical tomography system using high power LED light sources and silicon photodetectors has been designed and built, that can continuously scan and reconstruct spectroscopic images at a frame rate of 2 fps. The system is experimentally validated with tissue mimicking cylindrical resin phantom having light absorbing inhomogeneities of different size, shape and contrast, and at different locations.

Highly sensitive wide bandwidth photodetector based on internal photoemission in CVD grown p-type MoS2/graphene Schottky junction.

Science.gov (United States)

Vabbina, PhaniKiran; Choudhary, Nitin; Chowdhury, Al-Amin; Sinha, Raju; Karabiyik, Mustafa; Das, Santanu; Choi, Wonbong; Pala, Nezih

2015-07-22

Two dimensional (2D) Molybdenum disulfide (MoS2) has evolved as a promising material for next generation optoelectronic devices owing to its unique electrical and optical properties, such as band gap modulation, high optical absorption, and increased luminescence quantum yield. The 2D MoS2 photodetectors reported in the literature have presented low responsivity compared to silicon based photodetectors. In this study, we assembled atomically thin p-type MoS2 with graphene to form a MoS2/graphene Schottky photodetector where photo generated holes travel from graphene to MoS2 over the Schottky barrier under illumination. We found that the p-type MoS2 forms a Schottky junction with graphene with a barrier height of 139 meV, which results in high photocurrent and wide spectral range of detection with wavelength selectivity. The fabricated photodetector showed excellent photosensitivity with a maximum photo responsivity of 1.26 AW(-1) and a noise equivalent power of 7.8 × 10(-12) W/√Hz at 1440 nm.

Printed photodetectors

International Nuclear Information System (INIS)

Pace, Giuseppina; Grimoldi, Andrea; Sampietro, Marco; Natali, Dario; Caironi, Mario

2015-01-01

Photodetectors convert light pulses into electrical signals and are fundamental building blocks for any opto-electronic system adopting light as a probe or information carrier. They have widespread technological applications, from telecommunications to sensors in industrial, medical and civil environments. Further opportunities are plastic short-range communications systems, interactive large-area surfaces and light-weight, flexible, digital imagers. These applications would greatly benefit from the cost-effective fabrication processes enabled by printing technology. While organic semiconductors are the most investigated materials for printed photodetectors, and are the main focus of the present review, there are notable examples of other inorganic or hybrid printable semiconductors for opto-electronic systems, such as quantum-dots and nanowires. Here we propose an overview on printed photodetectors, including three-terminal phototransistors. We first give a brief account of the working mechanism of these light sensitive devices, and then we review the recent progress achieved with scalable printing techniques such as screen-printing, inkjet and other non-contact technologies in the development of all-printed or hybrid systems. (paper)

Printed photodetectors

Science.gov (United States)

Pace, Giuseppina; Grimoldi, Andrea; Sampietro, Marco; Natali, Dario; Caironi, Mario

2015-10-01

Photodetectors convert light pulses into electrical signals and are fundamental building blocks for any opto-electronic system adopting light as a probe or information carrier. They have widespread technological applications, from telecommunications to sensors in industrial, medical and civil environments. Further opportunities are plastic short-range communications systems, interactive large-area surfaces and light-weight, flexible, digital imagers. These applications would greatly benefit from the cost-effective fabrication processes enabled by printing technology. While organic semiconductors are the most investigated materials for printed photodetectors, and are the main focus of the present review, there are notable examples of other inorganic or hybrid printable semiconductors for opto-electronic systems, such as quantum-dots and nanowires. Here we propose an overview on printed photodetectors, including three-terminal phototransistors. We first give a brief account of the working mechanism of these light sensitive devices, and then we review the recent progress achieved with scalable printing techniques such as screen-printing, inkjet and other non-contact technologies in the development of all-printed or hybrid systems.

Enhanced Responsivity of Photodetectors Realized via Impact Ionization

Directory of Open Access Journals (Sweden)

De-Zhen Shen

2012-01-01

Full Text Available To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors.

Exploiting evanescent-wave amplification for subwavelength low-contrast particle detection

Science.gov (United States)

Roy, S.; Pereira, S. F.; Urbach, H. P.; Wei, Xukang; El Gawhary, O.

2017-07-01

The classical problem of subwavelength particle detection on a flat surface is especially challenging when the refractive index of the particle is close to that of the substrate. We demonstrate a method to improve the detection ability several times for such a situation, by enhancing the "forbidden" evanescent waves in the substrate using the principle of super-resolution with evanescent waves amplification. The working mechanism of the system and experimental validation from a design with a thin single dielectric layer is presented. The resulting system is a simple but complete example of evanescent-wave generation, amplification, and the consequent modulation of the far field. This principle can have far reaching impact in the field of particle detection in several applications ranging from contamination control to interferometric scattering microscopy for biological samples.

ISPA (imaging silicon pixel array) experiment

CERN Multimedia

Patrice Loïez

2002-01-01

The ISPA tube is a position-sensitive photon detector. It belongs to the family of hybrid photon detectors (HPD), recently developed by CERN and INFN with leading photodetector firms. HPDs confront in a vacuum envelope a photocathode and a silicon detector. This can be a single diode or a pixelized detector. The electrons generated by the photocathode are efficiently detected by the silicon anode by applying a high-voltage difference between them. ISPA tube can be used in high-energy applications as well as bio-medical and imaging applications.

Evanescent Effects Can Alter Ultraviolet Divergences in Quantum Gravity without Physical Consequences

CERN Document Server

Bern, Zvi; Chi, Huan-Hang; Davies, Scott; Dixon, Lance; Nohle, Josh

2015-01-01

Evanescent operators such as the Gauss-Bonnet term have vanishing perturbative matrix elements in exactly D=4 dimensions. Similarly, evanescent fields do not propagate in D=4; a three-form field is in this class, since it is dual to a cosmological-constant contribution. In this Letter, we show that evanescent operators and fields modify the leading ultraviolet divergence in pure gravity. To analyze the divergence, we compute the two-loop identical-helicity four-graviton amplitude and determine the coefficient of the associated (non-evanescent) R^3 counterterm studied long ago by Goroff and Sagnotti. We compare two pairs of theories that are dual in D=4: gravity coupled to nothing or to three-form matter, and gravity coupled to zero-form or to two-form matter. Duff and van Nieuwenhuizen showed that, curiously, the one-loop conformal anomaly --- the coefficient of the Gauss-Bonnet operator --- changes under p-form duality transformations. We concur, and also find that the leading R^3 divergence changes under du...

Evanescent field infrared spectroscopy using chalcogenide glass fiber

International Nuclear Information System (INIS)

Katz Moti

1992-06-01

In the last few years a simple and cheap fiber-optics based spectroscopy method was developed for the investigation of liquids, pastes gases and thin layers. The fiber is immersed in the sample, and the investigated material becomes the fiber cladding. the interaction between the guided radiation in the fiber and the specimen is taking place by evanescent field which extends outside the fiber. This work concentrates in the quantitative characterization of the absorption of the evanescent field by the fiber cladding (the specimen). This subject was dealt with only briefly in the earlier works, and the aim of this work is to obtain a comprehensive understanding of this issue. (author)

Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

Science.gov (United States)

Mehta, Karan K; Orcutt, Jason S; Shainline, Jeffrey M; Tehar-Zahav, Ofer; Sternberg, Zvi; Meade, Roy; Popović, Miloš A; Ram, Rajeev J

2014-02-15

We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum efficiencies around 20% and few-gigahertz response bandwidths. We observe this performance at low reverse biases in the range of a few volts and in devices with dark currents below 50 pA at 10 V. These results demonstrate that such photodetector behavior, previously reported by Preston et al. [Opt. Lett. 36, 52 (2011)], is achievable in bulk CMOS processes, with significant improvements with respect to the previous work in quantum efficiency, dark current, linearity, bandwidth, and operating bias due to additional midlevel doping implants and different material deposition. The present work thus offers a robust realization of a fully CMOS-fabricated all-silicon photodetector functional across a wide wavelength range.

Thallium bromide photodetectors for scintillation detection

CERN Document Server

Hitomi, K; Shoji, T; Hiratate, Y; Ishibashi, H; Ishii, M

2000-01-01

A wide bandgap compound semiconductor, TlBr, has been investigated as a blue sensitive photodetector material for scintillation detection. The TlBr photodetectors have been fabricated from the TlBr crystals grown by the TMZ method using materials purified by many pass zone refining. The performance of the photodetectors has been evaluated by measuring their leakage current, quantum efficiency, spatial uniformity, direct X-ray detection and scintillation detection characteristics. The photodetectors have shown high quantum efficiency for the blue wavelength region and high spatial uniformity for their optical response. In addition, good direct X-ray detection characteristics with an energy resolution of 4.5 keV FWHM for 22 keV X-rays from a sup 1 sup 0 sup 9 Cd radioactive source have been obtained. Detection of blue scintillation from GSO and LSO scintillators irradiated with a sup 2 sup 2 Na radioactive source has been done successfully by using the photodetectors at room temperature. A clear full-energy pea...

Photodetector of ultra-violet radiation

International Nuclear Information System (INIS)

Dorogan, V.; Vieru, T.; Coseac, V.; Chirita, F.

1999-01-01

The invention relates to photodetectors on the semiconductors base, in particular, to photodetectors of ultra-violet radiation and can be used in the optoelectronics systems for determining the intensity and dose of ultraviolet radiation emitted by the Sun and other sources. In the structure of the photodetector of ultraviolet radiation with a superficial potential barrier formed of semiconductors A 3 B 5 with the prohibited power width Eg 1 , solid solutions thereof with the prohibited power width Eg 2 and SnO 2 or ITO, in the semiconductors A 3 B 5 at a surface distance less than the absorption length of the visible radiation it is formed an isotype heterojunction between the semiconductors A 3 B 5 and solid solutions thereof with the prohibited power width Eg 2 > Eg 1 . The technical result consists in manufacturing of a photodetector sensitive solely to the ultraviolet radiation

Sensitivity enhancement in evanescent optical waveguidesensors

NARCIS (Netherlands)

Veldhuis, G.J.; Parriaux, O.; Hoekstra, Hugo; Lambeck, Paul

2000-01-01

It is shown, that the sensitivity of the effective refractive index on the cladding index in evanescent optical waveguide sensors, can be larger than unity. This implies that the attenuation of a guided wave propagating in a waveguide immersed in an absorptive medium can be made larger than that of

Silicon technology-based micro-systems for atomic force microscopy/photon scanning tunnelling microscopy.

Science.gov (United States)

Gall-Borrut, P; Belier, B; Falgayrettes, P; Castagne, M; Bergaud, C; Temple-Boyer, P

2001-04-01

We developed silicon nitride cantilevers integrating a probe tip and a wave guide that is prolonged on the silicon holder with one or two guides. A micro-system is bonded to a photodetector. The resulting hybrid system enables us to obtain simultaneously topographic and optical near-field images. Examples of images obtained on a longitudinal cross-section of an optical fibre are shown.

Evanescent Wave Absorption Based Fiber Sensor for Measuring Glucose Solution Concentration

Science.gov (United States)

Marzuki, Ahmad; Candra Pratiwi, Arni; Suryanti, Venty

2018-03-01

An optical fiber sensor based on evanescent wave absorption designed for measuring glucose solution consentration was proposed. The sensor was made to detect absorbance of various wavelength in the glucose solution. The sensing element was fabricated by side polishing of multimode polymer optical fiber to form a D-shape. The sensing element was immersed in different concentration of glucoce solution. As light propagated through the optical fiber, the evanescent wave interacted with the glucose solution. Light was absorbed by the glucose solution. The larger concentration the glucose solution has, the more the evanescent wave was absorbed in particular wavelenght. Here in this paper, light absorbtion as function of glucose concentration was measured as function of wavelength (the color of LED). We have shown that the proposed sensor can demonstrated an increase of light absorption as function of glucose concentration.

Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

Science.gov (United States)

2015-08-27

copyright information. 13. SUPPLEMENTARY NOTES. Enter information not included elsewhere such as: prepared in cooperation with; translation of; report...II-VI heterojunctions such as multi-color photodetectors and solar cells [2]. Mixing lattice-matched II-VI and III-V semiconductors could be an...at 77 K, further silicon oxide surface passivation can be done to suppress the surface leakage [10] in the future work. Figure 10 The dark I-V

Transfer function and near-field detection of evanescent waves

DEFF Research Database (Denmark)

Radko, Ylia P.; Bozhevolnyi, Sergey I.; Gregersen, Niels

2006-01-01

of collection and illumination modes. Making use of a collection near-field microscope with a similar fiber tip illuminated by an evanescent field, we measure the collected power as a function of the field spatial frequency in different polarization configurations. Considering a two-dimensional probe...... for the transfer function, which is derived by introducing an effective pointof (dipolelike) detection inside the probe tip. It is found to be possible to fit reasonably well both the experimental and the simulation data for evanescent field components, implying that the developed approximation of the near......-field transfer function can serve as a simple, rational, and sufficiently reliable means of fiber probe characterization....

The Silicon:Colloidal Quantum Dot Heterojunction

KAUST Repository

Masala, Silvia; Adinolfi, Valerio; Sun, Jon Paul; Del Gobbo, Silvano; Voznyy, Oleksandr; Kramer, Illan J.; Hill, Ian G.; Sargent, Edward H.

2015-01-01

A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Silicon:Colloidal Quantum Dot Heterojunction

KAUST Repository

Masala, Silvia

2015-10-13

A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Yb:KYW planar waveguide laser Q-switched by evanescent-field interaction with carbon nanotubes

NARCIS (Netherlands)

Kim, Jun Wan; Choi, Sun Young; Yeom, Dong-Il; Aravazhi, S.; Pollnau, Markus; Griebner, Uwe; Petrov, Valentin; Rotermund, Fabian

2013-01-01

We report Q-switched operation of a planar waveguide laser by evanescent-field interaction with single-walled carbon nanotubes deposited on top of the waveguide. The saturable-absorber-integrated gain medium, which operates based on evanescent-field interaction, enables the realization of a

Graphene quantum interference photodetector

Directory of Open Access Journals (Sweden)

Mahbub Alam

2015-03-01

Full Text Available In this work, a graphene quantum interference (QI photodetector was simulated in two regimes of operation. The structure consists of a graphene nanoribbon, Mach–Zehnder interferometer (MZI, which exhibits a strongly resonant transmission of electrons of specific energies. In the first regime of operation (that of a linear photodetector, low intensity light couples two resonant energy levels, resulting in scattering and differential transmission of current with an external quantum efficiency of up to 5.2%. In the second regime of operation, full current switching is caused by the phase decoherence of the current due to a strong photon flux in one or both of the interferometer arms in the same MZI structure. Graphene QI photodetectors have several distinct advantages: they are of very small size, they do not require p- and n-doped regions, and they exhibit a high external quantum efficiency.

Fiber optic probe of free electron evanescent fields in the optical frequency range

Energy Technology Data Exchange (ETDEWEB)

So, Jin-Kyu, E-mail: js1m10@orc.soton.ac.uk; MacDonald, Kevin F. [Optoelectronics Research Centre and Centre for Photonic Metamaterials, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Zheludev, Nikolay I. [Optoelectronics Research Centre and Centre for Photonic Metamaterials, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371 (Singapore)

2014-05-19

We introduce an optical fiber platform which can be used to interrogate proximity interactions between free-electron evanescent fields and photonic nanostructures at optical frequencies in a manner similar to that in which optical evanescent fields are sampled using nanoscale aperture probes in scanning near-field microscopy. Conically profiled optical fiber tips functionalized with nano-gratings are employed to couple electron evanescent fields to light via the Smith-Purcell effect. We demonstrate the interrogation of medium energy (30–50 keV) electron fields with a lateral resolution of a few micrometers via the generation and detection of visible/UV radiation in the 700–300 nm (free-space) wavelength range.

Fabrication and characterization of metal–semiconductor–metal ultraviolet photodetector based on rutile TiO{sub 2} nanorod

Energy Technology Data Exchange (ETDEWEB)

Selman, Abbas M., E-mail: alabbasiabbas@yahoo.co.uk [Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia); Department of Pharmacology and Toxicology, College of Pharmacy, University of Kufa, Najaf (Iraq); Hassan, Z. [Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia)

2016-01-15

The fabrication and characterization of a metal–semiconductor–metal ultraviolet photodetector are studied. The photodetector is based on TiO{sub 2} nanorods (NRs) grown on p-type (1 1 1)-oriented silicon substrate seeded with a TiO{sub 2} layer is synthesized by radio frequency reactive magnetron sputtering. A chemical bath deposition is used to grow TiO{sub 2} NRs on Si substrate. The structural and optical properties of the obtained sample are analyzed by using X-ray diffraction and field emission-scanning electron microscopy. Results show a tetragonal rutile structure of the synthesized TiO{sub 2} NRs. Optical properties are further examined using photoluminescence spectroscopy. A sharp and high-intensity UV peak at 367 nm is observed in comparison with visible defect peaks centered at 432 and 718 nm. Upon exposure to 365 nm light (2.3 mW/cm) at 5 V bias, the device displays 76.06 × 10{sup 2} sensitivity, internal photodetector gain of 77.06, photocurrent of the device is 2.62 × 10{sup −5} A and photoresponse peak of 69.7 mA/W. The response and recovery times are calculated as 18.5 and 19.1 ms upon illumination to a pulse UV light (365 nm, 2.3 mW/cm{sup 2}) at 5 V applied bias. These results demonstrate that the fabricated high-quality photodiode is a promising candidate as a low-cost UV photodetector for commercially-integrated photoelectronic applications.

Silicon Photomultipliers (SiPM) as novel photodetectors for PET

International Nuclear Information System (INIS)

Del Guerra, Alberto; Belcari, Nicola; Giuseppina Bisogni, Maria; Corsi, Francesco; Foresta, Maurizio; Guerra, Pedro; Marcatili, Sara; Santos, Andres; Sportelli, Giancarlo

2011-01-01

Next generation PET scanners should fulfill very high requirements in terms of spatial, energy and timing resolution. Modern scanner performances are inherently limited by the use of standard photomultiplier tubes. The use of Silicon Photomultipliers (SiPMs) is proposed for the construction of a 4D-PET module of 4.8x4.8 cm 2 aimed to replace the standard PMT based PET block detector. The module will be based on a LYSO continuous crystal read on two faces by Silicon Photomultipliers. A high granularity detection surface made by SiPM matrices of 1.5 mm pitch will be used for the x-y photon hit position determination with submillimetric accuracy, while a low granularity surface constituted by 16 mm 2 SiPM pixels will provide the fast timing information (t) that will be used to implement the Time of Flight technique (TOF). The spatial information collected by the two detector layers will be combined in order to measure the Depth of Interaction (DOI) of each event (z). The use of large area multi-pixel Silicon Photomultiplier (SiPM) detectors requires the development of a multichannel Data Acquisition system (DAQ) as well as of a dedicated front-end in order not to degrade the intrinsic detector capabilities and to manage many channels. The paper describes the progress made on the development of the proof of principle module under construction at the University of Pisa.

Effect of energy emission from evanescent electromagnetic wave at scattering by a dielectric structure

Energy Technology Data Exchange (ETDEWEB)

Gulyaev, Yu.V. [Institute of Radioengineering and Electronics of the Russian Academy of Sciences, 125009 Moscow (Russian Federation); Barabanenkov, Yu.N. [Institute of Radioengineering and Electronics of the Russian Academy of Sciences, 125009 Moscow (Russian Federation)]. E-mail: yu.barab@mail.ip.sitek.net; Barabanenkov, M.Yu. [Institute of Microelectronics Technology and High Purity Materials of the Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region (Russian Federation); Nikitov, S.A. [Institute of Radioengineering and Electronics of the Russian Academy of Sciences, 125009 Moscow (Russian Federation)

2005-02-21

We present an optical theorem for evanescent (near field) electromagnetic wave scattering by a dielectric structure. The derivation is based on the formalism of angular spectrum wave amplitudes. The optical theorem shows that an energy flux at scattering is emitted in the direction of incident evanescent wave decay.

SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector.

Science.gov (United States)

Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob; Rücker, Holger; Choi, Woo-Young

2014-01-13

We investigate signal-to-noise ratio (SNR) characteristics of an 850-nm optoelectronic integrated circuit (OEIC) receiver fabricated with standard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The OEIC receiver is composed of a Si avalanche photodetector (APD) and BiCMOS analog circuits including a transimpedance amplifier with DC-balanced buffer, a tunable equalizer, a limiting amplifier, and an output buffer with 50-Ω loads. We measure APD SNR characteristics dependence on the reverse bias voltage as well as BiCMOS circuit noise characteristics. From these, we determine the SNR characteristics of the entire OEIC receiver, and finally, the results are verified with bit-error rate measurement.

Enhanced photoresponsivity in graphene-silicon slow-light photonic crystal waveguides

International Nuclear Information System (INIS)

Zhou, Hao; Gu, Tingyi; McMillan, James F.; Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee; Feng, Guoying; Zhou, Shouhuan; Wong, Chee Wei

2016-01-01

We demonstrate the enhanced fast photoresponsivity in graphene hybrid structures by combining the ultrafast dynamics of graphene with improved light-matter interactions in slow-light photonic crystal waveguides. With a 200 μm interaction length, a 0.8 mA/W photoresponsivity is achieved in a graphene-silicon Schottky-like photodetector, with an operating bandwidth in excess of 5 GHz and wavelength range at least from 1480 nm to 1580 nm. Fourfold enhancement of the photocurrent is observed in the slow light region, compared to the wavelength far from the photonic crystal bandedge, for a chip-scale broadband fast photodetector.

GaN membrane MSM ultraviolet photodetectors

Science.gov (United States)

Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

2006-12-01

GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

Towards on-chip integration of brain imaging photodetectors using standard CMOS process.

Science.gov (United States)

Kamrani, Ehsan; Lesage, Frederic; Sawan, Mohamad

2013-01-01

The main effects of on-chip integration on the performance and efficiency of silicon avalanche photodiode (SiAPD) and photodetector front-end is addressed in this paper based on the simulation and fabrication experiments. Two different silicon APDs are fabricated separately and also integrated with a transimpedance amplifier (TIA) front-end using standard CMOS technology. SiAPDs are designed in p+/n-well structure with guard rings realized in different shapes. The TIA front-end has been designed using distributed-gain concept combined with resistive-feedback and common-gate topology to reach low-noise and high gain-bandwidth product (GBW) characteristics. The integrated SiAPDs show higher signal-to-noise ratio (SNR), sensitivity and detection efficiency comparing to the separate SiAPDs. The integration does not show a significant effect on the gain and preserves the low power consumption. Using APDs with p-well guard-ring is preferred due to the higher observed efficiency after integration.

Waveguide evanescent field fluorescence microscopy & its application in cell biology

Science.gov (United States)

Hassanzadeh, Abdollah

There are many powerful microscopy technologies available for the investigation of bulk materials as well as for thin film samples. Nevertheless, for imaging an interface, especially live cells on a substrate and ultra thin-films, only Total Internal Reflection Fluorescence (TIRF) microscopy is available. This TIRF microscopy allows imaging without interference of the bulk. Various approaches are employed in fluorescence microscopy applications to restrict the excitation and detection of fluorophores to a thin region of the specimen. Elimination of background fluorescence from outside the focal plane can dramatically improve the signal-to-noise ratio, and consequently, the spatial resolution of the features or events of interest. TIRF microscopy is an evanescent field based microscopy. In this method, fluorescent dyes are only excited within an evanescent field: roughly within 100 nm above a glass coverslip. This will allow imaging surface and interfacial issues of the glass coverslip and an adjacent material. Waveguide evanescent field fluorescence (WEFF) microscopy is a new development for imaging cell-substrate interactions in real time and in vitro. It is an alternative to TIRF microscopy. In this method the light is coupled into a waveguide via an optical grating. The coupled light propagates as a waveguide mode and exhibits an evanescent field on top of the waveguide. This can be used as a surface-bound illumination source to excite fluorophores. This evanescent field serves as an extremely powerful tool for quality control of thin films, to study cell-substrate contacts, and investigating the effect of external agents and drugs on the cell-substrate interaction in real time and in vitro. This new method has been established and optimized to minimize non-uniformity, scattering and photo bleaching issues. Visualizing and quantifying of the cell-substrates and solid thin films have been carried out by WEFF microscopy. The images of the cell-substrate interface

High-speed photodetectors in optical communication system

Science.gov (United States)

Zhao, Zeping; Liu, Jianguo; Liu, Yu; Zhu, Ninghua

2017-12-01

This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetectors from development history, research hotspots to packaging technologies is provided to the best of our knowledge. A few typical applications based on photodetectors are also illustrated, such as free-space optical communications, radio over fiber and millimeter terahertz signal generation systems. Project supported by the Preeminence Youth Fund of China (No. 61625504).

Thermal regulation of tightly packed solid-state photodetectors in a 1 mm{sup 3} resolution clinical PET system

Energy Technology Data Exchange (ETDEWEB)

Freese, D. L.; Vandenbroucke, A.; Innes, D.; Lau, F. W. Y.; Hsu, D. F. C.; Reynolds, P. D.; Levin, Craig S., E-mail: cslevin@stanford.edu [Departments of Electrical Engineering, Radiology, Physics, and BioEngineering, Stanford University, Stanford, California 94305-5128 (United States)

2015-01-15

Purpose: Silicon photodetectors are of significant interest for use in positron emission tomography (PET) systems due to their compact size, insensitivity to magnetic fields, and high quantum efficiency. However, one of their main disadvantages is fluctuations in temperature cause strong shifts in gain of the devices. PET system designs with high photodetector density suffer both increased thermal density and constrained options for thermally regulating the devices. This paper proposes a method of thermally regulating densely packed silicon photodetectors in the context of a 1 mm{sup 3} resolution, high-sensitivity PET camera dedicated to breast imaging. Methods: The PET camera under construction consists of 2304 units, each containing two 8 × 8 arrays of 1 mm{sup 3} LYSO crystals coupled to two position sensitive avalanche photodiodes (PSAPD). A subsection of the proposed camera with 512 PSAPDs has been constructed. The proposed thermal regulation design uses water-cooled heat sinks, thermoelectric elements, and thermistors to measure and regulate the temperature of the PSAPDs in a novel manner. Active cooling elements, placed at the edge of the detector stack due to limited access, are controlled based on collective leakage current and temperature measurements in order to keep all the PSAPDs at a consistent temperature. This thermal regulation design is characterized for the temperature profile across the camera and for the time required for cooling changes to propagate across the camera. These properties guide the implementation of a software-based, cascaded proportional-integral-derivative control loop that controls the current through the Peltier elements by monitoring thermistor temperature and leakage current. The stability of leakage current, temperature within the system using this control loop is tested over a period of 14 h. The energy resolution is then measured over a period of 8.66 h. Finally, the consistency of PSAPD gain between independent

High-performance silicon nanowire bipolar phototransistors

Science.gov (United States)

Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

2016-07-01

Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

Science.gov (United States)

Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

2018-02-01

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

Graphene photodetectors with a bandwidth  >76 GHz fabricated in a 6″ wafer process line

Science.gov (United States)

Schall, Daniel; Porschatis, Caroline; Otto, Martin; Neumaier, Daniel

2017-03-01

In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by communication infrastructure and service providers. However, the processing capacity, space, and energy consumption of the available technology is a serious bottleneck for the exploitation of these markets. Chip-integrated optical communication systems hold the promise of significantly improving these issues related to the current technology. At the moment, the answer to the question which material is best suited for ultrafast chip integrated communication systems is still open. In this manuscript we report on ultrafast graphene photodetectors with a bandwidth of more than 76 GHz well suitable for communication links faster than 100 GBit s-1 per channel. We extract an upper value of 7.2 ps for the timescale in which the bolometric photoresponse in graphene is generated. The photodetectors were fabricated on 6″ silicon-on-insulator wafers in a semiconductor pilot line, demonstrating the scalable fabrication of high-performance graphene based devices.

Digital Alloy Absorber for Photodetectors

Science.gov (United States)

Hill, Cory J. (Inventor); Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor)

2016-01-01

In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.

Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis

International Nuclear Information System (INIS)

Shasti, M.; Mortezaali, A.; Dariani, R. S.

2015-01-01

In this study, Aluminum doped Zinc Oxide (AZO) layer is deposited on p-type silicon (p-Si) by spray pyrolysis method to fabricate ultraviolet-visible (UV/Vis) photodetector as Al doping process can have positive effect on the photodetector performance. Morphology, crystalline structure, and Al concentration of AZO layer are investigated by SEM, XRD, and EDX. The goal of this study is to analyze the mechanism of carrier transport by means of current-voltage characteristics under UV/Vis illumination in two cases: (a) electrodes connected to the surface of AZO layer and (b) electrodes connected to cross section of heterojunction (AZO/p-Si). Measurements indicate that the AZO/p-Si photodiode exhibits a higher photocurrent and lower photoresponse time under visible illumination with respect to AZO photodetector; while under UV illumination, the above result is inversed. Besides, the internal junction field of AZO/p-Si heterojunction plays an important role on this mechanism

Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Shasti, M.; Mortezaali, A., E-mail: mortezaali@alzahra.ac.ir; Dariani, R. S. [Department of Physics, Alzahra University, Tehran 1993893973 (Iran, Islamic Republic of)

2015-01-14

In this study, Aluminum doped Zinc Oxide (AZO) layer is deposited on p-type silicon (p-Si) by spray pyrolysis method to fabricate ultraviolet-visible (UV/Vis) photodetector as Al doping process can have positive effect on the photodetector performance. Morphology, crystalline structure, and Al concentration of AZO layer are investigated by SEM, XRD, and EDX. The goal of this study is to analyze the mechanism of carrier transport by means of current-voltage characteristics under UV/Vis illumination in two cases: (a) electrodes connected to the surface of AZO layer and (b) electrodes connected to cross section of heterojunction (AZO/p-Si). Measurements indicate that the AZO/p-Si photodiode exhibits a higher photocurrent and lower photoresponse time under visible illumination with respect to AZO photodetector; while under UV illumination, the above result is inversed. Besides, the internal junction field of AZO/p-Si heterojunction plays an important role on this mechanism.

Quantitative Understanding on the Amplitude Decay Characteristic of the Evanescent Electromagnetic Waves Generated by Seismoelectric Conversion

Science.gov (United States)

Ren, Hengxin; Huang, Qinghua; Chen, Xiaofei

2018-03-01

We conduct numerical simulations and theoretical analyses to quantitatively study the amplitude decay characteristic of the evanescent electromagnetic (EM) waves, which has been neglected in previous studies on the seismoelectric conversion occurring at a porous-porous interface. Time slice snapshots of seismic and EM wave-fields generated by a vertical single force point source in a two-layer porous model show that evanescent EM waves can be induced at a porous-porous interface. The seismic and EM wave-fields computed for a receiver array located in a vertical line nearby the interface are investigated in detail. In addition to the direct and interface-response radiation EM waves, we identify three groups of coseismic EM fields and evanescent EM waves associated with the direct P, refracted SV-P and direct SV waves, respectively. Thereafter, we derive the mathematical expression of the amplitude decay factor of the evanescent EM waves. This mathematical expression is further validated by our numerical simulations. It turns out the amplitude decay of the evanescent EM waves generated by seismoelectric conversion is greatly dependent on the horizontal wavenumber of seismic waves. It is also found the evanescent EM waves have a higher detectability at a lower frequency range. This work provides a better understanding on the EM wave-fields generated by seismoelectric conversion, which probably will help improve the interpretation of the seismoelectric coupling phenomena associated with natural earthquakes or possibly will inspire some new ideas on the application of the seismoelectric coupling effect.

Vertical Ge photodetector base on InP taper waveguide

Science.gov (United States)

Amiri, Iraj Sadegh; Ariannejad, M. M.; Azzuhri, S. R. B.; Anwar, T.; Kouhdaragh, V.; Yupapin, P.

2018-06-01

In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition.

Plasmonic-Resonant Bowtie Antenna for Carbon Nanotube Photodetectors

Directory of Open Access Journals (Sweden)

Hongzhi Chen

2012-01-01

Full Text Available The design of bowtie antennas for carbon nanotube (CNT photodetectors has been investigated. CNT photodetectors have shown outstanding performance by using CNT as sensing element. However, detection wavelength is much larger than the diameter of the CNT, resulting in small fill factor. Bowtie antenna can confine light into a subwavelength volume based on plasmonic resonance, thus integrating a bowtie antenna to CNT photodetectors can highly improve photoresponse of the detectors. The electric field enhancement of bowtie antennas was calculated using the device geometry by considering fabrication difficulties and photodetector structure. It is shown that the electric field intensity enhancement increased exponentially with distance reduction between the CNT photodetector to the antenna. A redshift of the peak resonance wavelength is predicted due to the increase of tip angles of the bowtie antennas. Experimental results showed that photocurrent enhancement agreed well with theoretical calculations. Bowtie antennas may find wide applications in nanoscale photonic sensors.

Photonic and Plasmonic Guided Modes in Graphene-Silicon Photonic Crystals

DEFF Research Database (Denmark)

Gu, Tingyi; Andryieuski, Andrei; Hao, Yufeng

2015-01-01

We report the results of systematic studies of plasmonic and photonic guided modes in large-area single-layer graphene integrated into a nanostructured silicon substrate. The interaction of light with graphene and substrate photonic crystals can be classified in distinct regimes depending......, filters, sensors, and photodetectors utilizing silicon photonic platforms....... on the relation of the photonic crystal lattice constant and the relevant modal wavelengths, that is, plasmonic, photonic, and free-space. By optimizing the design of the substrate, these resonant modes can increase the absorption of graphene in the infrared, facilitating enhanced performance of modulators...

Characterization of Ge Nano structures Embedded Inside Porous Silicon for Photonics Application

International Nuclear Information System (INIS)

Rahim, A.F.A.; Hashim, M.R.; Rahim, A.F.A.; Ali, N.K.

2011-01-01

In this work we prepared germanium nano structures by means of filling the material inside porous silicon (PS) using conventional and cost effective technique, thermal evaporator. The PS acts as patterned substrate. It was prepared by anodization of silicon wafer in ethanoic hydrofluoric acid (HF). A Ge layer was then deposited onto the PS by thermal evaporation. This was followed by deposition of Si layer by thermal evaporation and anneal at 650 degree Celsius for 30 min. The process was completed by Ni metal deposition using thermal evaporator followed by metal annealing of 400 degree Celsius for 10 min to form metal semiconductor metal (MSM) photodetector. Structural analysis of the samples was performed using energy dispersive x-ray analysis (EDX), scanning electron microscope (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS). EDX spectrum suggests the presence of Ge inside the pores structure. Raman spectrum showed that good crystalline structure of Ge can be produced inside silicon pores with a phase with the diamond structure by (111), (220) and (400) reflections. Finally current-voltage (I-V) measurement of the MSM photodetector was carried out and showed lower dark currents compared to that of Si control device. Interestingly the device showed enhanced current gain compared to Si device which can be associated with the presence of Ge nano structures in the porous silicon. (author)

Evanescent radiation, quantum mechanics and the Casimir effect

Science.gov (United States)

Schatten, Kenneth H.

1989-01-01

An attempt to bridge the gap between classical and quantum mechanics and to explain the Casimir effect is presented. The general nature of chaotic motion is discussed from two points of view: the first uses catastrophe theory and strange attractors to describe the deterministic view of this motion; the underlying framework for chaos in these classical dynamic systems is their extreme sensitivity to initial conditions. The second interpretation refers to randomness associated with probabilistic dynamics, as for Brownian motion. The present approach to understanding evanescent radiation and its relation to the Casimir effect corresponds to the first interpretation, whereas stochastic electrodynamics corresponds to the second viewpoint. The nonlinear behavior of the electromagnetic field is also studied. This well-understood behavior is utilized to examine the motions of two orbiting charges and shows a closeness between the classical behavior and the quantum uncertainty principle. The evanescent radiation is used to help explain the Casimir effect.

Towards a fully integrated indium-phosphide membrane on silicon photonics platform

NARCIS (Netherlands)

van Engelen, J.P.; Pogoretskiy, V.; Smit, M.K.; van der Tol, J.J.G.M.; Jiao, Y.

2017-01-01

Recently a uni-traveling-carrier photodetector with high speed (> 67GHz) and a high-gain optical amplifier (110/cm at 4 kA/cm2) have been demonstrated using the InP membrane-on-Silicon (IMOS) integration technology. Passives in IMOS have shown features comparable to SOI platforms due to the tight

System-level integration of active silicon photonic biosensors

Science.gov (United States)

Laplatine, L.; Al'Mrayat, O.; Luan, E.; Fang, C.; Rezaiezadeh, S.; Ratner, D. M.; Cheung, K.; Dattner, Y.; Chrostowski, L.

2017-02-01

Biosensors based on silicon photonic integrated circuits have attracted a growing interest in recent years. The use of sub-micron silicon waveguides to propagate near-infrared light allows for the drastic reduction of the optical system size, while increasing its complexity and sensitivity. Using silicon as the propagating medium also leverages the fabrication capabilities of CMOS foundries, which offer low-cost mass production. Researchers have deeply investigated photonic sensor devices, such as ring resonators, interferometers and photonic crystals, but the practical integration of silicon photonic biochips as part of a complete system has received less attention. Herein, we present a practical system-level architecture which can be employed to integrate the aforementioned photonic biosensors. We describe a system based on 1 mm2 dies that integrate germanium photodetectors and a single light coupling device. The die are embedded into a 16x16 mm2 epoxy package to enable microfluidic and electrical integration. First, we demonstrate a simple process to mimic Fan-Out Wafer-level-Packaging, which enables low-cost mass production. We then characterize the photodetectors in the photovoltaic mode, which exhibit high sensitivity at low optical power. Finally, we present a new grating coupler concept to relax the lateral alignment tolerance down to +/- 50 μm at 1-dB (80%) power penalty, which should permit non-experts to use the biochips in a"plug-and-play" style. The system-level integration demonstrated in this study paves the way towards the mass production of low-cost and highly sensitive biosensors, and can facilitate their wide adoption for biomedical and agro-environmental applications.

Silicon-based visible and near-infrared optoelectric devices

Energy Technology Data Exchange (ETDEWEB)

Mazur, Eric; Carey, James Edward

2017-10-17

In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Photodetector of ultraviolet radiation

International Nuclear Information System (INIS)

Dorogan, V.; Branzari, V.; Vieru, T.; Manole, M.; Canter, V.

2000-01-01

The invention relates to photodetectors on base of semiconductors of ultraviolet radiation and may be used in optoelectronic system for determining the intensity and the dose of ultraviolet radiation emitted by the Sun or other sources. Summary of the invention consists in the fact that in the photodetector of ultraviolet radiation the superficial potential barrier is divided into two identical elements, electrically isolated each of the other, one of them being covered with a layer of transparent material for visible and infrared radiation and absorption the ultra violet radiation. The technical result consists in mutual compensation of visible and infrared components of the radiation spectrum

Geometrical optics in the near field: local plane-interface approach with evanescent waves.

Science.gov (United States)

Bose, Gaurav; Hyvärinen, Heikki J; Tervo, Jani; Turunen, Jari

2015-01-12

We show that geometrical models may provide useful information on light propagation in wavelength-scale structures even if evanescent fields are present. We apply a so-called local plane-wave and local plane-interface methods to study a geometry that resembles a scanning near-field microscope. We show that fair agreement between the geometrical approach and rigorous electromagnetic theory can be achieved in the case where evanescent waves are required to predict any transmission through the structure.

Hybrid integration of carbon nanotubes in silicon photonic structures

Science.gov (United States)

Durán-Valdeiglesias, E.; Zhang, W.; Alonso-Ramos, C.; Le Roux, X.; Serna, S.; Hoang, H. C.; Marris-Morini, D.; Cassan, E.; Intonti, F.; Sarti, F.; Caselli, N.; La China, F.; Gurioli, M.; Balestrieri, M.; Vivien, L.; Filoramo, A.

2017-02-01

Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photo- and electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform. .

Progress on the development of a silicon–carbon nanotube photodetector

Energy Technology Data Exchange (ETDEWEB)

Aramo, C., E-mail: aramo@na.infn.it [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Ambrosio, A. [CNR-SPIN, U.O.S. di Napoli (Italy); Dipartimento di Scienze Fisiche, Universitá degli Studi di Napoli Federico II, Via Cintia 2, 80126 Napoli (Italy); Ambrosio, M. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Battiston, R. [INFN, Sezione di Perugia e Dipartimento di Fisica, Universitá degli Studi di Perugia, Piazza Universitá 1, 06100 Perugia (Italy); Castrucci, P. [Dipartimento di Fisica, Universitá degli Studi di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma (Italy); Cilmo, M. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); De Crescenzi, M. [Dipartimento di Fisica, Universitá degli Studi di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma (Italy); Fiandrini, E. [INFN, Sezione di Perugia e Dipartimento di Fisica, Universitá degli Studi di Perugia, Piazza Universitá 1, 06100 Perugia (Italy); Guarino, F. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Dipartimento di Scienze Fisiche, Universitá degli Studi di Napoli Federico II, Via Cintia 2, 80126 Napoli (Italy); Grossi, V. [Dipartimento di Fisica, Universitá degli Studi dell Aquila, Via Vetoio 10, 67100 Coppito, LAquila (Italy); Maddalena, P. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Dipartimento di Scienze Fisiche, Universitá degli Studi di Napoli Federico II, Via Cintia 2, 80126 Napoli (Italy); Nappi, E. [INFN, Sezione di Bari e Dipartimento di Fisica, Universitá degli Studi di Bari, Via Amendola 173, 70126 Bari (Italy); and others

2013-08-01

The properties of carbon nanotubes (CNTs), the new allotropic status of carbon discovered in 1991, have been widely investigated in all possible application field. This new material in fact can be easily obtained chemically by CVD (Chemical Vapour Deposition) as a layer of nanotubes growth on a wide variety of materials. When growth on a silicon surface, CNTs create a semiconductor heterojunction with peculiar photoresponsivity properties. We studied this heterojunction with the purpose to realize a large photocathode with high quantum efficiency in a large wavelength range from UV to IR. Results obtained up to day allowed us to build a new kind of photodetector very cheap, stable and easy to manage. Recently this new device has been proposed as one of candidates for the beam monitor system of SuperB.

Development of evanescent wave absorbance-based fibre-optic ...

Indian Academy of Sciences (India)

potential human health risk and may lead to death in young children and adults ... tive measures for disease outbreak are necessary, because of the recent biothreat, ... optical fibres in chemical sensing and biosensing are reviewed in detail in [12–19]. ... systematic development of these evanescent wave absorbance-based ...

Optical biosensor based on a silicon nanowire ridge waveguide for lab on chip applications

International Nuclear Information System (INIS)

Gamal, Rania; Ismail, Yehea; Swillam, Mohamed A

2015-01-01

We propose a novel sensor using a silicon nanowire ridge waveguide (SNRW). This waveguide is comprised of an array of silicon nanowires on an insulator substrate that has the envelope of a ridge waveguide. The SNRW inherently maximizes the overlap between the material-under-test and the incident light wave by introducing voids to the otherwise bulk structure. When a sensing sample is injected, the voids within the SNRW adopt the refractive index of the material-under-test. Hence, the strong contribution of the material-under-test to the overall modal effective index will greatly augment the sensitivity. Additionally, the ridge structure provides a fabrication convenience as it covers the entire substrate, ensuring that the etching process would not damage the substrate. Finite-difference time-domain simulations are conducted and showed that the percentage change in the effective index due to a 1% change in the surrounding environment is more than 170 times the change perceived in an evanescent-detection based bulk silicon ridge waveguide. Moreover, the SNRW proves to be more sensitive than recent other, non-evanescent sensors. In addition, the detection limit for this structure was revealed to be as small as 10 −8 . A compact bimodal waveguide based on SNRW is designed and tested. It delivers high sensitivity values that offer comparable performance to similar low-index light-guiding sensing configurations; however, our proposed structure has much smaller footprints and allows high dense integration for lab-on-chip applications. (paper)

Enhanced Graphene Photodetector with Fractal Metasurface

DEFF Research Database (Denmark)

Fan, Jieran; Wang, Di; DeVault, Clayton

2016-01-01

We designed and fabricated a broadband, polarization-independent photodetector by integrating graphene with a fractal Cayley tree metasurface. Our measurements show an almost uniform, tenfold enhancement in photocurrent generation due to the fractal metasurface structure.......We designed and fabricated a broadband, polarization-independent photodetector by integrating graphene with a fractal Cayley tree metasurface. Our measurements show an almost uniform, tenfold enhancement in photocurrent generation due to the fractal metasurface structure....

From the Somigliana waves to the evanescent waves

Directory of Open Access Journals (Sweden)

Pietro Caloi

2010-02-01

Full Text Available The Rayleigh equation has real coefficients; therefore, also the case of complex conjugated roots may be explained physically. The Author proves that the Somigliana waves may be formed for Poisson ratio values until 0.30543; for gradually less rigid media, they are missing altogether and degenerate into evanescent waves.

Graphene photodetectors with a bandwidth  >76 GHz fabricated in a 6″ wafer process line

International Nuclear Information System (INIS)

Schall, Daniel; Porschatis, Caroline; Otto, Martin; Neumaier, Daniel

2017-01-01

In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by communication infrastructure and service providers. However, the processing capacity, space, and energy consumption of the available technology is a serious bottleneck for the exploitation of these markets. Chip-integrated optical communication systems hold the promise of significantly improving these issues related to the current technology. At the moment, the answer to the question which material is best suited for ultrafast chip integrated communication systems is still open. In this manuscript we report on ultrafast graphene photodetectors with a bandwidth of more than 76 GHz well suitable for communication links faster than 100 GBit s −1 per channel. We extract an upper value of 7.2 ps for the timescale in which the bolometric photoresponse in graphene is generated. The photodetectors were fabricated on 6″ silicon-on-insulator wafers in a semiconductor pilot line, demonstrating the scalable fabrication of high-performance graphene based devices. (paper)

High-performance polymer photovoltaic cells and photodetectors

Science.gov (United States)

Yu, Gang; Srdanov, Gordana; Wang, Hailiang; Cao, Yong; Heeger, Alan J.

2001-02-01

Polymer photovoltaic cells and photodetectors have passed their infancy and become mature technologies. The energy conversion efficiency of polymer photovoltaic cells have been improved to over 4.1% (500 nm, 10 mW/cm2). Such high efficiency polymer photovoltaic cells are promising for many applications including e-papers, e-books and smart- windows. The development of polymer photodetectors is even faster. The performance parameters have been improved to the level meeting all specifications for practical applications. The polymer photodetectors are of high photosensitivity (approximately 0.2 - 0.3 A/Watt in visible and UV), low dark current (0.1 - 1 nA/cm2), large dynamic range (> 8 orders of magnitude), linear intensity dependence, low noise level and fast response time (to nanosecond time domain). These devices show long shelf and operation lives. The advantages of low manufacturing cost, large detection area, and easy hybridization and integration with other electronic or optical components make the polymer photodetectors promising for a variety of applications including chemical/biomedical analysis, full-color digital image sensing and high energy radiation detection.

Evanescent magnetic field effects on entropy generation at the onset ...

Indian Academy of Sciences (India)

application of evanescent magnetic field not only suppresses the fluctuation of the ..... the Prigogine's theorem of minimum entropy production is unproven. ... consists in a double spiral configuration and viscous boundary layers in close ...

Investigating the sensitivity of PMMA optical fibres for use as an evanescent field absorption sensor in aqueous solutions

International Nuclear Information System (INIS)

Lye, P G; Boerkamp, M; Ernest, A; Lamb, D W

2005-01-01

Polymethylmethacrylate (PMMA) optical fibres are low-cost polymer fibres that are generally more physically robust than silica fibres, are more flexible, yet like silica fibres have the potential to be used for practical evanescent field absorption sensors in aqueous solutions. However, evanescent field absorption in aqueous solutions is influenced by more than just the specific absorptivity of the solution in question. The physical configuration of the optical fibre itself, as well as surface charge interactions between the fibre and the chromophore in the solution also significantly affects the sensitivity of the fibre to evanescent field absorption. This paper reports on an investigation of numerous physical phenomena that influence evanescent field absorption for PMMA fibres using an aqueous solution of the dye Amidoblack. Parameters investigated included fibre coiling configuration and bend radius, fibre interaction length, and effect of solution pH. Coiled fibres were found to be more sensitive to evanescent field absorption than straight (uncoiled) lengths, and sensitivity was found to increase with a further reduction in bend radius. At high solution pH, the absorption versus solution concentration proved to be linear whereas at low pH the absorption versus concentration relationship exhibited a clear deviation from linearity. The observed nonlinearity at low pH points to the importance of accounting for electrostatic interactions between chromophore and fibre surface when designing a PMMA sensor for evanescent field absorption measurements in aqueous solutions

On the propagation speed of evanescent modes

International Nuclear Information System (INIS)

Barbero, A.P.L.; Hernandez Figueroa, H.E.; Recami, E.

2000-03-01

The group velocity of evanescent waves (in undersized waveguides, for instance) was theoretically predicted, and has been experimentally verified, to be superluminal. By contrast, it is known that the precursor speed in vacuum cannot be larger than c. This paper, by computer simulations based on Maxwell equations only, shows the existence of both phenomena and verifies the actual possibility of superluminal group velocities, without violating the so-called (naive) Einstein causality

On the propagation speed of evanescent modes

Energy Technology Data Exchange (ETDEWEB)

Barbero, A.P.L. [State Univ. of Campinas, Campinas (Brazil)]|[Universidad Federal Fluminense (Brazil); Hernandez Figueroa, H.E. [State Univ. of Campinas, Campinas (Brazil); Recami, E. [Istituto Nazionale di Fisica Nucleare, Milan (Italy)]|[Bergamo Univ., Bergamo (Italy). Fac. di Ingegneria]|[State Univ. of Campinas, Campinas (Brazil)

2000-03-01

The group velocity of evanescent waves (in undersized waveguides, for instance) was theoretically predicted, and has been experimentally verified, to be superluminal. By contrast, it is known that the precursor speed in vacuum cannot be larger than c. This paper, by computer simulations based on Maxwell equations only, shows the existence of both phenomena and verifies the actual possibility of superluminal group velocities, without violating the so-called (naive) Einstein causality.

High-speed detection at two micrometres with monolithic silicon photodiodes

Science.gov (United States)

Ackert, Jason J.; Thomson, David J.; Shen, Li; Peacock, Anna C.; Jessop, Paul E.; Reed, Graham T.; Mashanovich, Goran Z.; Knights, Andrew P.

2015-06-01

With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’. A promising solution is to open new spectral regions at wavelengths near 2 μm and to exploit the long-wavelength transmission and amplification capabilities of hollow-core photonic-bandgap fibres and the recently available thulium-doped fibre amplifiers. To date, photodetector devices for this window have largely relied on III-V materials or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility. Here, we describe a silicon photodiode operating at 20 Gbit s-1 in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.

Low Voltage Low Light Imager and Photodetector

Science.gov (United States)

Nikzad, Shouleh (Inventor); Martin, Chris (Inventor); Hoenk, Michael E. (Inventor)

2013-01-01

Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of detecting low-energy electrons, has high gain, and is of low noise.

Evanescent Effects can Alter Ultraviolet Divergences in Quantum Gravity without Physical Consequences.

Science.gov (United States)

Bern, Zvi; Cheung, Clifford; Chi, Huan-Hang; Davies, Scott; Dixon, Lance; Nohle, Josh

2015-11-20

Evanescent operators such as the Gauss-Bonnet term have vanishing perturbative matrix elements in exactly D=4 dimensions. Similarly, evanescent fields do not propagate in D=4; a three-form field is in this class, since it is dual to a cosmological-constant contribution. In this Letter, we show that evanescent operators and fields modify the leading ultraviolet divergence in pure gravity. To analyze the divergence, we compute the two-loop identical-helicity four-graviton amplitude and determine the coefficient of the associated (nonevanescent) R^{3} counterterm studied long ago by Goroff and Sagnotti. We compare two pairs of theories that are dual in D=4: gravity coupled to nothing or to three-form matter, and gravity coupled to zero-form or to two-form matter. Duff and van Nieuwenhuizen showed that, curiously, the one-loop trace anomaly-the coefficient of the Gauss-Bonnet operator-changes under p-form duality transformations. We concur and also find that the leading R^{3} divergence changes under duality transformations. Nevertheless, in both cases, the physical renormalized two-loop identical-helicity four-graviton amplitude can be chosen to respect duality. In particular, its renormalization-scale dependence is unaltered.

Optical trapping of cold neutral atoms using a two-color evanescent light field around a carbon nanotube

International Nuclear Information System (INIS)

Nga, Do Thi; Viet, Nguyen Ai; Nga, Dao Thi Thuy; Lan, Nguyen Thi Phuong

2014-01-01

We suggest a new schema of trapping cold atoms using a two-color evanescent light field around a carbon nanotube. The two light fields circularly polarized sending through a carbon nanotube generates an evanescent wave around this nanotube. By evanescent effect, the wave decays away from the nanotube producing a set of trapping minima of the total potential in the transverse plane as a ring around the nanotube. This schema allows capture of atoms to a cylindrical shell around the nanotube. We consider some possible boundary conditions leading to the non-trivial bound state solution. Our result will be compared to some recent trapping models and our previous trapping models.

Microchannel plate photodetectors

International Nuclear Information System (INIS)

Majka, R.

1977-01-01

A review is given the status of development work on photodetectors using microchannel plates (MCP) as the electron gain element. Projections are made and opinions are presented on what might be available in the next few years. Several uses for these devices at ISABELLE are mentioned

Multi-step surface functionalization of polyimide based evanescent wave photonic biosensors and application for DNA hybridization by Mach-Zehnder interferometer

Energy Technology Data Exchange (ETDEWEB)

Melnik, Eva [Health and Environment Department, Nano Systems, AIT Austrian Institute of Technology GmbH, Donau-City-Strasse 1, 1220 Vienna (Austria); Department of Analytical Chemistry, University of Vienna, Waehringer Strasse 38, 1090 Vienna (Austria); Bruck, Roman [Health and Environment Department, Nano Systems, AIT Austrian Institute of Technology GmbH, Donau-City-Strasse 1, 1220 Vienna (Austria); Hainberger, Rainer, E-mail: rainer.hainberger@ait.ac.at [Health and Environment Department, Nano Systems, AIT Austrian Institute of Technology GmbH, Donau-City-Strasse 1, 1220 Vienna (Austria); Laemmerhofer, Michael, E-mail: michael.laemmerhofer@univie.ac.at [Department of Analytical Chemistry, University of Vienna, Waehringer Strasse 38, 1090 Vienna (Austria)

2011-08-12

Highlights: {yields} We realize a biosensing platform for polyimide evanescent photonic wave sensors. {yields} We show that the surface functionalization via silanisation and biotinylation followed by streptavidin immobilization do not destroy or damage the thin polyimide film. {yields} A highly dense streptavidin layer enables the immobilisation of biotinylated ligands such as biotinylated ssDNA for the selective measurement of DNA hybridization. - Abstract: The process of surface functionalization involving silanization, biotinylation and streptavidin bonding as platform for biospecific ligand immobilization was optimized for thin film polyimide spin-coated silicon wafers, of which the polyimide film serves as a wave guiding layer in evanescent wave photonic biosensors. This type of optical sensors make great demands on the materials involved as well as on the layer properties, such as the optical quality, the layer thickness and the surface roughness. In this work we realized the binding of a 3-mercaptopropyl trimethoxysilane on an oxygen plasma activated polyimide surface followed by subsequent derivatization of the reactive thiol groups with maleimide-PEG{sub 2}-biotin and immobilization of streptavidin. The progress of the functionalization was monitored by using different fluorescence labels for optimization of the chemical derivatization steps. Further, X-ray photoelectron spectroscopy and atomic force microscopy were utilized for the characterization of the modified surface. These established analytical methods allowed to derive information like chemical composition of the surface, surface coverage with immobilized streptavidin, as well as parameters of the surface roughness. The proposed functionalization protocol furnished a surface density of 144 fmol mm{sup -2} streptavidin with good reproducibility (13.9% RSD, n = 10) and without inflicted damage to the surface. This surface modification was applied to polyimide based Mach-Zehnder interferometer

Experimental study of the evanescent-wave photonic sensors response in presence of molecular beacon conformational changes.

Science.gov (United States)

Ruiz-Tórtola, Ángela; Prats-Quílez, Francisco; Gónzalez-Lucas, Daniel; Bañuls, María-José; Maquieira, Ángel; Wheeler, Guy; Dalmay, Tamas; Griol, Amadeu; Hurtado, Juan; Bohlmann, Helge; Götzen, Reiner; García-Rupérez, Jaime

2018-04-17

An experimental study of the influence of the conformational change suffered by molecular beacon (MB) probes -upon the biorecognition of nucleic acid target oligonucleotides over evanescent wave photonic sensors- is reported. To this end, high sensitivity photonic sensors based on silicon photonic bandgap (PBG) structures were used, where the MB probes were immobilized via their 5' termination. Those MBs incorporate a biotin moiety close to their 3' termination in order to selectively bind a streptavidin molecule to them. The different photonic sensing responses obtained towards the target oligonucleotide detection, when the streptavidin molecule was bound to the MB probes or not, demonstrate the conformational change suffered by the MB upon hybridization, which promotes the displacement of the streptavidin molecule away from the surface of the photonic sensing structure. Schematic diagram of the PBG sensing structure on which the streptavidin-labeled MB probes were immobilized. This article is protected by copyright. All rights reserved.

Hypersonic evanescent waves generated with a planar spiral coil.

Science.gov (United States)

Stevenson, A C; Araya-Kleinsteuber, B; Sethi, R S; Mehta, H M; Lowe, C R

2003-09-01

A planar spiral coil has been used to induce hypersonic evanescent waves in a quartz substrate with the unique ability to focus the acoustic wave down onto the chemical recognition layer. These special sensing conditions were achieved by investigating the application of a radio frequency current to a coaxial waveguide and spiral coil, so that wideband repeating electrical resonance conditions could be established over the MHz to GHz frequency range. At a selected operating frequency of 1.09 GHz, the evanescent wave depth of a quartz crystal hypersonic resonance is reduced to 17 nm, minimising unwanted coupling to the bulk fluid. Verification of the validity of the hypersonic resonance was carried out by characterising the system electrically and acoustically: Impedance calculations of the combined coil and coaxial waveguide demonstrated an excellent fit to the measured data, although above 400 MHz a transition zone was identified where unwanted impedance is parasitic of the coil influence efficiency, so the signal-to-noise ratio is reduced from 3000 to 300. Acoustic quartz crystal resonances at intervals of precisely 13.2138 MHz spacing, from the 6.6 MHz ultrasonic range and onto the desired hypersonic range above 1 GHz, were incrementally detected. Q factor measurements demonstrated that reductions in energy lost from the resonator to the fluid interface were consistent with the anticipated shrinkage of the evanescent wave with increasing operating frequency. Amplitude and frequency reduction in contact with a glucose solution was demonstrated at 1.09 GHz. The complex physical conditions arising at the solid-liquid interface under hypersonic entrainment are discussed with respect to acceleration induced slippage, rupture, longitudinal and shear radiation and multiphase relaxation affects.

Plasmonic and silicon spherical nanoparticle antireflective coatings

Science.gov (United States)

Baryshnikova, K. V.; Petrov, M. I.; Babicheva, V. E.; Belov, P. A.

2016-03-01

Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes.

Evanescent-wave cavity ring-down spectroscopy for enhanced detection of surface binding under flow injection analysis conditions

NARCIS (Netherlands)

Van Der Sneppen, L.; Ariese, F.; Gooijer, C.; Ubachs, W.

2008-01-01

In evanescent-wave cavity ring-down spectroscopy, one (or more) of the re°ections inside the cavity is a total internal re°ection (TIR) event. Only the evanescent wave associated with this TIR is being used for prob-ing the sample. This technique is therefore highly surface-speci-c and attractive

Propagation of evanescent waves in multimode chalcogenide fiber immersed in an aqueous acetone solution: theory and experiment

Science.gov (United States)

Korsakova, S. V.; Romanova, E. A.; Velmuzhov, A. P.; Kotereva, T. V.; Sukhanov, M. V.; Shiryaev, V. S.

2017-04-01

Chalcogenide fibers are considered as a base for creation of a fiber-optical platform for the mid-IR evanescent wave spectroscopy. In this work, transmittance of a multimode fiber made of Ge26As17Se25Te32 glass, immersed into an aqueous acetone solution was measured in the range of wavelengths 5 - 9 microns at various concentrations of the solution. A theoretical approach based on electromagnetic theory of optical fibers has been applied for analysis of evanescent modes propagation in the fiber. Attenuation coefficients calculated for each HE1m evanescent mode increase with the mode radial order m. This effect can be used for optimisation of the fiber-optic sensing elements for the mid-IR spectroscopy.

Helicity and evanescent waves. [Energy transport velocity, helicity, Lorentz transformation

Energy Technology Data Exchange (ETDEWEB)

Agudin, J L; Platzeck, A M [La Plata Univ. Nacional (Argentina); Albano, J R [Instituto de Astronomia y Fisica del Espacio, Buenos Aires, Argentina

1978-02-20

It is shown that the projection of the angular momentum of a circularly polarized electromagnetic evanescent wave along the mean velocity of energy transport (=helicity) can be reverted by a Lorentz transformation, in spite of the fact that this velocity is c.

Design and Analysis of a Multicolor Quantum Well Infrared Photodetector

National Research Council Canada - National Science Library

Alves, Fabio D. P

2005-01-01

.... These characteristics have been found in quantum well infrared photodetectors (QWIP). Driven by these applications, a QWIP photodetector capable of detecting simultaneously infrared emissions within near infrared (NIR...

A miniaturized oxygen sensor integrated on fiber surface based on evanescent-wave induced fluorescence quenching

Energy Technology Data Exchange (ETDEWEB)

Xiong, Yan [School of Chemistry and Chemical Engineering, Southwest Petroleum University, Chengdu 610500 (China); Oil and Gas Field Applied Chemistry Key Laboratory of Sichuan Province, Southwest Petroleum University, Chengdu, 610500 (China); Tan, Jun; Wang, Chengjie; Zhu, Ying [School of Chemistry and Chemical Engineering, Southwest Petroleum University, Chengdu 610500 (China); Fang, Shenwen [School of Chemistry and Chemical Engineering, Southwest Petroleum University, Chengdu 610500 (China); Oil and Gas Field Applied Chemistry Key Laboratory of Sichuan Province, Southwest Petroleum University, Chengdu, 610500 (China); Wu, Jiayi; Wang, Qing [School of Chemistry and Chemical Engineering, Southwest Petroleum University, Chengdu 610500 (China); Duan, Ming, E-mail: swpua124@126.com [State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation, Southwest Petroleum University, Chengdu 610500 (China); School of Chemistry and Chemical Engineering, Southwest Petroleum University, Chengdu 610500 (China); Oil and Gas Field Applied Chemistry Key Laboratory of Sichuan Province, Southwest Petroleum University, Chengdu, 610500 (China)

2016-11-15

In this work, a miniaturized sensor was integrated on fiber surface and developed for oxygen determination through evanescent-wave induced fluorescence quenching. The sensor was designed by using light emitting diode (LED) as light source and optical fiber as light transmission element. Tris(2,2′-bipyridyl) ruthenium ([Ru(bpy){sub 3}]{sup 2+}) fluorophore was immobilized in the organically modified silicates (ORMOSILs) film and coated onto the fiber surface. When light propagated by total internal reflection (TIR) in the fiber core, evanescent wave could be produced on the fiber surface and excite [Ru(bpy){sub 3}]{sup 2+} fluorophore to produce fluorescence emission. Then oxygen could be determinated by its quenching effect on the fluorescence and its concentration could be evaluated according to Stern–Volumer model. Through integrating evanescent wave excitation and fluorescence quenching on fiber surface, the sensor was successfully miniaturized and exhibit improved performances of high sensitivity (1.4), excellent repeatability (1.2%) and fast analysis (12 s) for oxygen determination. The sensor provided a newly portable method for in-situ and real-time measurement of oxygen and showed potential for practical oxygen analysis in different application fields. Furthermore, the fabrication of this sensor provides a miniaturized and portable detection platform for species monitoring by simple modular design. - Highlights: • ORMOSILs sensing film immobilized with [Ru(bpy){sub 3}]{sup 2+} fluorophore was coated on fiber surface. • Evanescent wave on the fiber surface was utilized as excitation source to produce fluorescence. • Oxygen was measured based on its quenching effect on evanescent wave-induce fluorescence. • Sensor fabrication was miniaturized by integrating detection and sensing elements on the fiber. • The modular design sensor provides a detection platform for other species monitoring.

Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

International Nuclear Information System (INIS)

Aruev, P N; Barysheva, Mariya M; Ber, B Ya; Zabrodskaya, N V; Zabrodskii, V V; Lopatin, A Ya; Pestov, Alexey E; Petrenko, M V; Polkovnikov, V N; Salashchenko, Nikolai N; Sukhanov, V L; Chkhalo, Nikolai I

2012-01-01

The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 μm is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)

Multi-sample immunoassay inside optical fiber capillary enabled by evanescent wave detection

Directory of Open Access Journals (Sweden)

Chun-Wei Wang

2016-03-01

Full Text Available A novel evanescent wave-based (EW microfluidic capillary fiber-optic biosensor (MCFOB has been developed using capillaries as a transducer embedded in a multichannel device to enhance the collection efficiency of the fluorescence signal. The capillary serves dual roles as a waveguide and a container, enabling more straightforward, consistent, and compact biosensor packaging compared to conventional optical fiber biosensors and microfluidic systems. In order to detect multiple samples in one device, the biosensor incorporates a polydimethysiloxane (PDMS multi-channel device, which also serves as cladding for the biosensor. In addition, this biosensor only consumes 10 μl of a sample and does not require hydrofluoric acid etching in the fabrication process. The orientation for signal collection is optimized by comparing the lateral and normal signal directions for detected glyceraldehyde 3-phosphate dehydrogenase (GAPDH. C-reactive protein (CRP is used to validate the MCFOB, and the limit of detection (LOD for CRP in the MCFOB is 1.94 ng/ml (74 pM. Moreover, the real-time measurement is demonstrated to verify that the evanescent wave is the only exciting light source in the MCFOB, which gives the potential for real-time measurement applications. Keywords: C-reactive protein, Capillary, Fiber-optic, Microfluidic, Evanescent wave, Immunoassay

Photodetector Characteristics in Visible Light Communication

KAUST Repository

Ho, Kang-Ting

2016-04-01

Typically, in the semiconductor industry pn heterojunctions have been used as either light-emitting diodes (LED) or photodiodes by applying forward current bias or reverse voltage bias, respectively. However, since both devices use the same structure, the light emitting and detecting properties could be combine in one single device, namely LED-based photodetector. Therefore, by integrating LED-based photodetectors as either transmitter or receiver, optical wireless communication could be easily implemented for bidirectional visible light communication networks at low-cost. Therefore, this dissertation focus on the investigation of the photodetection characteristics of InGaN LED-based photodetectors for visible light communication in the blue region. In this regard, we obtain external quantum efficiency of 10 % and photoresponse rise time of 71 μs at 405-nm illumination, revealing high-performance photodetection characteristics. Furthermore, we use orthogonal frequency division multiplexing quadrature amplitude modulation codification scheme to enlarge the operational bandwidth. Consequently, the transmission rate of the communication is efficiently enhanced up to 420 Mbit/s in visible light communication.

Fano resonance of the ultrasensitve optical force excited by Gaussian evanescent field

International Nuclear Information System (INIS)

Yang, Yang; Li, Jiafang; Li, Zhi-Yuan

2015-01-01

In this paper, we study the angle-dependent Fano-like optical force spectra of plasmonic Ag nanoparticles, which exhibit extraordinary transformation from Lorentzian resonance to Fano resonance when excited by a Gaussian evanescent wave. We systematically analyze the behavior of this asymmetric scattering induced optical force under different conditions and find that this Fano interference-induced force is ultrasensitive to the excitation wavelength, incident angle and particle size, as well as the core–shell configuration, which could be useful for wavelength- and angle-dependent size-selective optical manipulation. The origin of this Fano resonance is further identified as the interference between the two adjacent-order multipolar plasmonic modes excited in the Ag particle under the excitation of an inhomogeneously distributed evanescent field. (paper)

The performance of silicon photomultipliers in Cherenkov TOF PET

International Nuclear Information System (INIS)

Dolenec, Rok; Korpar, Samo; Krizan, Peter; Pestotink, Rok

2015-01-01

In time-of-flight positron emission tomography (TOF PET) one of the main factors limiting the time resolution is the time evolution of the scintillation process. This can be avoided by using exclusively the Cherenkov light produced in a suitable material. Sub 100 ps FWHM timing has already been experimentally demonstrated but with a drawback of relatively low detection efficiency due to the photodetectors used. In this work silicon photomultipliers (SiPMs) are considered as a photodetector in Cherenkov TOF PET. The detection efficiency can be significantly improved by using SiPMs, however, at room temperature the SiPM dark counts introduce a significant source of fake coincidences. SiPM samples from different producers were tested in a simple back-to-back setup in combination with lead fluoride Cherenkov radiators. Results for coincidence timing, detection efficiency and effects of dark counts at different temperatures and SiPM overvoltages are presented.

III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

Science.gov (United States)

Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

2017-08-04

The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

A 75 GHz silicon metal-semiconductor-metal Schottky photodiode

International Nuclear Information System (INIS)

Alexandrou, S.; Wang, C.; Hsiang, T.Y.; Liu, M.Y.; Chou, S.Y.

1993-01-01

The ultrafast characteristics of crystalline-silicon metal-semiconductor-metal (MSM) photodiodes with 300 nm finger width and spacing were measured with a subpicosecond electro-optic sampling system. Electrical responses with full width at half maximum as short as 5.5 and 11 ps, at corresponding 3 dB bandwidths of 75 and 38 GHz, were generated by violet and red photons, respectively. The difference is attributed to the photon penetration depth which is much larger than the diode finger spacing at red, but smaller at violet. Light-intensity dependence was also examined at different wavelengths, indicating a linear relation and a higher sensitivity in the violet. These results not only demonstrated the fastest silicon photodetector reported to date, but also pinpointed the dominant speed-limiting factor of silicon MSM photodiodes. A configuration is suggested to improve the speed of these detectors at long wavelengths

Photodetectors for weak-signal detection fabricated from ZnO:(Li,N) films

Energy Technology Data Exchange (ETDEWEB)

He, G.H. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun 130033 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhou, H. [Key Laboratory of Semiconductors and Applications of Fujian Province, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005 (China); Shen, H. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun 130033 (China); Lu, Y.J. [Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001 (China); Wang, H.Q.; Zheng, J.C. [Key Laboratory of Semiconductors and Applications of Fujian Province, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005 (China); Li, B.H. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun 130033 (China); Shan, C.X., E-mail: shancx@ciomp.ac.cn [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun 130033 (China); Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001 (China); Shen, D.Z. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun 130033 (China)

2017-08-01

Highlights: • ZnO films with carrier concentration as low as 5.0 × 10{sup 13} cm{sup −3} have been prepared via a lithium and nitrogen codoping method. • Ultraviolet photodetector that can detect weak signal with power density as low as 20 nw/cm{sup 2} have been fabricated from the ZnO:(Li,N) films. • The detectivity and noise equivalent power of the photodetector can reach 3.60 × 10{sup 15} cmHz{sup 1/2}/W and 6.67 × 10{sup −18} W{sup −1}, both of which are amongst the best values ever reported for ZnO photodetectors. - Abstract: ZnO films with carrier concentration as low as 5.0 × 10{sup 13} cm{sup −3} have been prepared via a lithium and nitrogen codoping method, and ultraviolet photodetectors have been fabricated from the films. The photodetectors can be used to detect weak signals with power density as low as 20 nw/cm{sup 2}, and the detectivity and noise equivalent power of the photodetector can reach 3.60 × 10{sup 15} cmHz{sup 1/2}/W and 6.67 × 10{sup −18} W{sup −1}, respectively, both of which are amongst the best values ever reported for ZnO based photodetectors. The high-performance of the photodetector can be attributed to the relatively low carrier concentration of the ZnO:(Li,N) films.

Plasmonic silicon Schottky photodetectors: The physics behind graphene enhanced internal photoemission

Directory of Open Access Journals (Sweden)

Uriel Levy

2017-02-01

Full Text Available Recent experiments have shown that the plasmonic assisted internal photoemission from a metal to silicon can be significantly enhanced by introducing a monolayer of graphene between the two media. This is despite the limited absorption in a monolayer of undoped graphene ( ∼ π α = 2.3 % . Here we propose a physical model where surface plasmon polaritons enhance the absorption in a single-layer graphene by enhancing the field along the interface. The relatively long relaxation time in graphene allows for multiple attempts for the carrier to overcome the Schottky barrier and penetrate into the semiconductor. Interface disorder is crucial to overcome the momentum mismatch in the internal photoemission process. Our results show that quantum efficiencies in the range of few tens of percent are obtainable under reasonable experimental assumptions. This insight may pave the way for the implementation of compact, high efficiency silicon based detectors for the telecom range and beyond.

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces

Science.gov (United States)

Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

2018-02-01

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

Colloidal quantum dot photodetectors

KAUST Repository

Konstantatos, Gerasimos; Sargent, Edward H.

2011-01-01

in particular on visible-, near-infrared, and short-wavelength infrared photodetectors based on size-effect-tuned semiconductor nanoparticles made using quantum-confined PbS, PbSe, Bi 2S3, and In2S3. These devices have in recent years achieved room-temperature D

Low-noise, transformer-coupled resonant photodetector for squeezed state generation.

Science.gov (United States)

Chen, Chaoyong; Shi, Shaoping; Zheng, Yaohui

2017-10-01

In an actual setup of squeezed state generation, the stability of a squeezing factor is mainly limited by the performance of the servo-control system, which is mainly influenced by the shot noise and gain of a photodetector. We present a unique transformer-coupled LC resonant amplifier as a photodetector circuit to reduce the electronic noise and increase the gain of the photodetector. As a result, we obtain a low-noise, high gain photodetector with the gain of more than 1.8×10 5 V/A, and the input current noise of less than 4.7 pA/Hz. By adjusting the parameters of the transformer, the quality factor Q of the resonant circuit is close to 100 in the frequency range of more than 100 MHz, which meets the requirement for weak power detection in the application of squeezed state generation.

R&D of a pioneering system for a high resolution photodetector: The VSiPMT

Science.gov (United States)

Barbato, F. C. T.; Barbarino, G.; Campajola, L.; Di Capua, F.; Mollo, C. M.; Valentini, A.; Vivolo, D.

2017-12-01

The VSiPMT (Vacuum Silicon PhotoMultiplier Tube) is an innovative design for a hybrid photodetector. The idea, born with the purpose to use a SiPM for large detection volumes, consists in replacing the classical dynode chain with a special SiPM. In this configuration, we match the large sensitive area of a photocathode with the performances of the SiPM technology, which therefore acts like an electron detector and so like a current amplifier. The excellent photon counting capability, fast response, low power consumption and the stability are among the most attractive features of the VSiPMT.We now present the progress on the realization of a 1-in. prototype and the preliminary tests we are performing on it.

Carbon nanotube woven textile photodetector

Science.gov (United States)

Zubair, Ahmed; Wang, Xuan; Mirri, Francesca; Tsentalovich, Dmitri E.; Fujimura, Naoki; Suzuki, Daichi; Soundarapandian, Karuppasamy P.; Kawano, Yukio; Pasquali, Matteo; Kono, Junichiro

2018-01-01

The increasing interest in mobile and wearable technology demands the enhancement of functionality of clothing through incorporation of sophisticated architectures of multifunctional materials. Flexible electronic and photonic devices based on organic materials have made impressive progress over the past decade, but higher performance, simpler fabrication, and most importantly, compatibility with woven technology are desired. Here we report on the development of a weaved, substrateless, and polarization-sensitive photodetector based on doping-engineered fibers of highly aligned carbon nanotubes. This room-temperature-operating, self-powered detector responds to radiation in an ultrabroad spectral range, from the ultraviolet to the terahertz, through the photothermoelectric effect, with a low noise-equivalent power (a few nW/Hz 1 /2) throughout the range and with a Z T -factor value that is twice as large as that of previously reported carbon nanotube-based photothermoelectric photodetectors. Particularly, we fabricated a ˜1 -m-long device consisting of tens of p+-p- junctions and weaved it into a shirt. This device demonstrated a collective photoresponse of the series-connected junctions under global illumination. The performance of the device did not show any sign of deterioration through 200 bending tests with a bending radius smaller than 100 μ m as well as standard washing and ironing cycles. This unconventional photodetector will find applications in wearable technology that require detection of electromagnetic radiation.

Holographic View of the Brain Memory Mechanism Based on Evanescent Superluminal Photons

Directory of Open Access Journals (Sweden)

Takaaki Musha

2012-08-01

Full Text Available D. Pollen and M. Trachtenberg proposed the holographic brain theory to help explain the existence of photographic memories in some people. They suggested that such individuals had more vivid memories because they somehow could access a very large region of their memory holograms. Hameroff suggested in his paper that cylindrical neuronal microtubule cavities, or centrioles, function as waveguides for the evanescent photons for quantum signal processing. The supposition is that microtubular structures of the brain function as a coherent fiber bundle set used to store holographic images, as would a fiber-optic holographic system. In this paper, the author proposes that superluminal photons propagating inside the microtubules via evanescent waves could provide the access needed to record or retrieve a quantum coherent entangled holographic memory.

Compact 3D printed module for fluorescence and label-free imaging using evanescent excitation

Science.gov (United States)

Pandey, Vikas; Gupta, Shalini; Elangovan, Ravikrishnan

2018-01-01

Total internal reflection fluorescence (TIRF) microscopy is widely used for selective excitation and high-resolution imaging of fluorophores, and more recently label-free nanosized objects, with high vertical confinement near a liquid-solid interface. Traditionally, high numerical aperture objectives (>1.4) are used to simultaneously generate evanescent waves and collect fluorescence emission signals which limits their use to small area imaging (filters to prevent specular reflection within the objective lenses. We have developed a compact 3D module called cTIRF that can generate evanescent waves in microscope glass slides via a planar waveguide illumination. The module can be attached as a fixture to any existing optical microscope, converting it into a TIRF and enabling high signal-to-noise ratio (SNR) fluorescence imaging using any magnification objective. As the incidence optics is perpendicular to the detector, label-free evanescent scattering-based imaging of submicron objects can also be performed without using emission filters. SNR is significantly enhanced in this case as compared to cTIRF alone, as seen through our model experiments performed on latex beads and mammalian cells. Extreme flexibility and the low cost of our approach makes it scalable for limited resource settings.

Zero-bias 32 Gb/s evanescently coupled InGaAs/InP UTC-PDs

Science.gov (United States)

Sun, Siwei; Liang, Song; Xie, Xiao; Xu, Junjie; Guo, Lu; Zhu, Hongliang; Wang, Wei

2018-05-01

We report the design and fabrication of high speed evanescently coupled InGaAs/InP uni-traveling-carrier-photodiodes (UTC-PDs). A self-aligned passive waveguide is integrated with the PDs by a simple fabrication procedure. Open eye diagrams at 32 Gb/s under zero bias are demonstrated for the first time, to the best of our knowledge, from evanescently or edge coupled InP based PDs, which are easier to be integrated with other optical components than surface illuminated PDs. When used for photonic integrated circuits (PICs) applications, our PDs help to lower the electrical cross talk and power consumption of PICs chips.

Polarization-sensitive and broadband germanium sulfide photodetectors with excellent high-temperature performance.

Science.gov (United States)

Tan, Dezhi; Zhang, Wenjin; Wang, Xiaofan; Koirala, Sandhaya; Miyauchi, Yuhei; Matsuda, Kazunari

2017-08-31

Layered materials, such as graphene, transition metal dichalcogenides and black phosphorene, have been established rapidly as intriguing building blocks for optoelectronic devices. Here, we introduce highly polarization sensitive, broadband, and high-temperature-operation photodetectors based on multilayer germanium sulfide (GeS). The GeS photodetector shows a high photoresponsivity of about 6.8 × 10 3 A W -1 , an extremely high specific detectivity of 5.6 × 10 14 Jones, and broad spectral response in the wavelength range of 300-800 nm. More importantly, the GeS photodetector has high polarization sensitivity to incident linearly polarized light, which provides another degree of freedom for photodetectors. Tremendously enhanced photoresponsivity is observed with a temperature increase, and high responsivity is achievable at least up to 423 K. The establishment of larger photoinduced reduction of the Schottky barrier height will be significant for the investigation of the photoresponse mechanism of 2D layered material-based photodetectors. These attributes of high photocurrent generation in a wide temperature range, broad spectral response, and polarization sensitivity coupled with environmental stability indicate that the proposed GeS photodetector is very suitable for optoelectronic applications.

ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

International Nuclear Information System (INIS)

Lin, T.K.; Chang, S.J.; Su, Y.K.; Chiou, Y.Z.; Wang, C.K.; Chang, S.P.; Chang, C.M.; Tang, J.J.; Huang, B.R.

2005-01-01

Homoepitaxial and heteroepitaxial ZnSe metal-semiconductor-metal (MSM) photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector could provide us smaller dark current and large photocurrent. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial and heteroepitaxial ZnSe photodetectors were 0.128 and 0.045 A/W, which corresponds to a quantum efficiency of 36 and 12%, respectively. Furthermore, it was found that we achieved the minimum noise equivalent power (NEP) of 7.6 x 10 -13 W and the maximum normalized detectivity (D *) of 9.3 x 10 11 cm Hz 0.5 W -1 from our homoepitaxial ZnSe photodetector. In contrast, NEP and D * of the heteroepitaxial ZnSe photodetector were 2.9 x 10 -12 W and 2.44 x 10 11 cm Hz 0.5 W -1 , respectively

Conditions for a carrier multiplication in amorphous-selenium based photodetector

Energy Technology Data Exchange (ETDEWEB)

Masuzawa, Tomoaki; Kuniyoshi, Shingo; Onishi, Masanori; Kato, Richika; Saito, Ichitaro; Okano, Ken [Department of Material Science, International Christian University, S102 Science Hall, ICU, 3-10-2 Osawa, Mitaka, Tokyo 181-8585 (Japan); Yamada, Takatoshi [Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, Tsukuba, Ibaraki 305-8568 (Japan); Koh, Angel T. T.; Chua, Daniel H. C. [Department of Materials Science and Engineering, National University of Singapore, 7 Engineering Drive 1, Singapore 117574 (Singapore); Shimosawa, Tatsuo [Department of Clinical Laboratory, Faculty of Medicine, University of Tokyo, 7-3-1 Hongo, Bunkyoku, Tokyo 113-8655 (Japan)

2013-02-18

Amorphous selenium is a promising candidate for high sensitivity photodetector due to its unique carrier multiplication phenomenon. More than 10 carriers can be generated per incident photon, which leads to high photo-conversion efficiency of 1000% that allows real-time imaging in dark ambient. However, application of this effect has been limited to specific devices due to the lack in material characterization. In this article, mechanism of carrier multiplication has been clarified using time-of-flight secondary ion mass spectroscopy and Raman spectroscopy. A prototype photodetector achieved photo conversion efficiency of 4000%, which explains the signal enhancement mechanism in a-Se based photodetector.

Conditions for a carrier multiplication in amorphous-selenium based photodetector

International Nuclear Information System (INIS)

Masuzawa, Tomoaki; Kuniyoshi, Shingo; Onishi, Masanori; Kato, Richika; Saito, Ichitaro; Okano, Ken; Yamada, Takatoshi; Koh, Angel T. T.; Chua, Daniel H. C.; Shimosawa, Tatsuo

2013-01-01

Amorphous selenium is a promising candidate for high sensitivity photodetector due to its unique carrier multiplication phenomenon. More than 10 carriers can be generated per incident photon, which leads to high photo-conversion efficiency of 1000% that allows real-time imaging in dark ambient. However, application of this effect has been limited to specific devices due to the lack in material characterization. In this article, mechanism of carrier multiplication has been clarified using time-of-flight secondary ion mass spectroscopy and Raman spectroscopy. A prototype photodetector achieved photo conversion efficiency of 4000%, which explains the signal enhancement mechanism in a-Se based photodetector.

Periodically structured Si pillars for high-performing heterojunction photodetectors

Science.gov (United States)

Melvin David Kumar, M.; Yun, Ju-Hyung; Kim, Joondong

2015-03-01

A periodical array of silicon (Si) micro pillar structures was fabricated on Si substrates using PR etching process. Indium tin oxide (ITO) layer of 80 nm thickness was deposited over patterned Si substrates so as to make ITO/n-Si heterojunction devices. The influences of width and period of pillars on the optical and electrical properties of prepared devices were investigated. The surface morphology of the Si substrates revealed the uniform array of pillar structures. The 5/10 (width/period) Si pillar pattern reduced the optical reflectance to 6.5% from 17% which is of 5/7 pillar pattern. The current rectifying ratio was found higher for the device in which the pillars are situated in optimum periods. At both visible (600 nm) and near infrared (900 nm) range of wavelengths, the 5/7 and 5/10 pillar patterned device exhibited the better photoresponses which are suitable for making advanced photodetectors. This highly transmittance and photoresponsive pillar patterned Si substrates with an ITO layer would be a promising device for various photoelectric applications.

Photodetectors: Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment (Adv. Mater. 31/2016).

Science.gov (United States)

Jo, Seo-Hyeon; Park, Hyung-Youl; Kang, Dong-Ho; Shim, Jaewoo; Jeon, Jaeho; Choi, Seunghyuk; Kim, Minwoo; Park, Yongkook; Lee, Jaehyeong; Song, Young Jae; Lee, Sungjoo; Park, Jin-Hong

2016-08-01

The effects of triphenylphosphine (PPh3 ) and (3-amino-propyl)triethoxysilane (APTES) on a rhenium diselenide (ReSe2 ) photodetector are systematically studied by J.-H. Park and co-workers on page 6711 in comparison with a conventional MoS2 device. A very high performance ReSe2 photodetector is demonstrated, which has a broad photodetection range, high photoresponsivity (1.18 × 10(6) A W(-1) ), and fast photoswitching speed (rising/decaying time: 58/263 ms). © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon drift detectors coupled to CsI(Tl) scintillators for spaceborne gamma-ray detectors

International Nuclear Information System (INIS)

Marisaldi, M.; Fiorini, C.; Labanti, C.; Longoni, A.; Perotti, F.; Rossi, E.; Soltau, H.

2006-01-01

Silicon Drift Detectors (SDDs), thanks to their peculiar low noise characteristics, have proven to be excellent photodetectors for CsI(Tl) scintillation light detection. Two basic detector configurations have been developed: either a single SDD or a monolithic array of SDDs coupled to a single CsI(Tl) crystal. A 16 independent detectors prototype is under construction, designed to work in conjunction with the MEGA Compton telescope prototype under development at MPE, Garching, Germany. A single SDD coupled to a CsI(Tl) crystal has also been tested as a monolithic detector with an extended energy range between 1.5 keV and 1 MeV. The SDD is used as a direct X-ray detector for low energy photons interacting in silicon and as a scintillation light photodetector for photons interacting in the crystal. The type of interaction is identified by means of pulse shape discrimination technique. Detectors based on an array of SDDs coupled to a single CsI(Tl) crystal have also been built. The readout of these detectors is based on the Anger camera technique, and submillimeter spatial resolution can be achieved. The two detectors' approaches and their applications will be described

Near-field imaging of interference pattern of counterpropagating evanescent waves

DEFF Research Database (Denmark)

Bozhevolnyi, Sergey I.; Bozhevolnaya, Elena A.

1999-01-01

It is generally accepted that measurement of of the contrast of the intensity interference pattern formed by two counterpropagating evanescent waves can be used to characterize the resolving power of a collection near-field microscope. We argue that, if the light collected by a fiber probe propag...... be equal to the contrast of the interference pattern....

Responsivity Enhanced NMOSFET Photodetector Fabricated by Standard CMOS Technology

Directory of Open Access Journals (Sweden)

Fuwei Wu

2015-01-01

Full Text Available Increasing the responsivity is one of the important issues for a photodetector. In this paper, we demonstrate an improved NMOSFET photodetector by using deep-n-well (DNW structure which can improve the responsivity of the photodetector significantly. The experimental results show that the responsivity can be enhanced greatly by the DNW structure and is much larger than the previous work when DNW is biased with 0.5 V, while the dark current exhibits almost no increase. Further characterization indicates that the diode formed by the bulk and DNW can efficiently absorb photons and has a large gain factor of the photocurrent especially under low light condition, which gives a more promising application for the detector to detect the weak light.

Ultra-efficient all-printed organic photodetectors

Science.gov (United States)

Kielar, Marcin; Dhez, Olivier; Hirsch, Lionel

2016-09-01

Organic photodetectors are able to transform plastic into intelligent surfaces making our daily life easier, smarter and more productive. The key element for a sensor is to reduce the dark current density in order to boost the limit of detection. The energetic requirements in order to select materials for ultra-high performance organic photodetectors are presented with the following experimental results: a detectivity of 3.36 × 1013 Jones has been achieved with an extremely low dark current density of 0.32 nA cm-2 and a responsivity as high as 0.34 A W-1. Flexible devices are all made at lowtemperature and with solution-processed materials. Their stability under operation is also presented.

Hybrid organic photodetectors for radiography

Energy Technology Data Exchange (ETDEWEB)

Buechele, Patric [Light Technology Institute, Karlsruhe Institute of Technology. Karlsruhe (Germany); Siemens AG. Corporate Technologies. Erlangen (Germany); Schmidt, Oliver; Tedde, Sandro; Hartmann, David [Siemens AG. Corporate Technologies. Erlangen (Germany); Richter, Moses [Institute for Materials for Electronics and Energy Technology, Friedrich-Alexander University. Erlangen (Germany); Lemmer, Uli [Light Technology Institute, Karlsruhe Institute of Technology. Karlsruhe (Germany)

2013-07-01

Most of todays X-ray detectors are using an indirect conversion mechanism. The X-ray radiation is converted into visible light within a thick scintillator layer. The visible light is then absorbed by standard thin-film photodetectors. The isotropic propagation of light in the scintillator reduces the resolution of the x-ray imager. This work avoids the stacked structure by integration of inorganic PbS quantum dots directly into the bulk hetero junction (BHJ) of an organic photodetector. X-ray photons are immediately converted into charge carriers and travel in direction of the electrical field towards the electrodes. However, this concept demands much thicker organic layers than known from conventional OLED and OPV processing. We demonstrate that thick diodes can be achieved with a spray coating process and the influence of spraying parameters on device performance is discussed.

III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range

Science.gov (United States)

Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

2017-01-01

The availability of silicon photonic integrated circuits (ICs) in the 2–4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III–V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III–V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy. PMID:28777291

Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

Science.gov (United States)

Marrs, Michael A; Raupp, Gregory B

2016-07-26

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

High performance photodetector based on 2D CH3NH3PbI3 perovskite nanosheets

International Nuclear Information System (INIS)

Li, Pengfei; Shivananju, B N; Li, Shaojuan; Bao, Qiaoliang; Zhang, Yupeng

2017-01-01

In this work, a high performance vertical-type photodetector based on two-dimensional (2D) CH 3 NH 3 PbI 3 perovskite nanosheets was fabricated. The low trap density of the perovskite nanosheets and their short carrier diffusion distance result in a significant performance enhancement of the perovskite-based photodetector. The photoresponsivity of this vertical-type photodetector is as high as 36 mA W −1 at visible wavelength, which is much better than traditional perovskite photodetectors (0.34 mA W −1 ). Compared with traditional planar-type perovskite-based photodetectors, this vertical-type photodetector also shows the advantages of low-voltage operation and large responsivity. These results may pave the way for exploiting high performance perovskite-based photodetectors with an ingenious device design. (paper)

Gravity mode offset and properties of the evanescent zone in red-giant stars

Science.gov (United States)

Hekker, S.; Elsworth, Y.; Angelou, G. C.

2018-03-01

Context. The wealth of asteroseismic data for red-giant stars and the precision with which these data have been observed over the last decade calls for investigations to further understand the internal structures of these stars. Aim. The aim of this work is to validate a method to measure the underlying period spacing, coupling term, and mode offset of pure gravity modes that are present in the deep interiors of red-giant stars. We subsequently investigate the physical conditions of the evanescent zone between the gravity mode cavity and the pressure mode cavity. Methods: We implement an alternative mathematical description compared to what is used in the literature to analyse observational data and to extract the underlying physical parameters that determine the frequencies of mixed modes. This description takes the radial order of the modes explicitly into account, which reduces its sensitivity to aliases. Additionally, and for the first time, this method allows us to constrain the gravity mode offset ɛg for red-giant stars. Results: We find that this alternative mathematical description allows us to determine the period spacing ΔΠ and the coupling term q for the dipole modes within a few percent of values found in the literature. Additionally, we find that ɛg varies on a star-by-star basis and should not be kept fixed in the analysis. Furthermore, we find that the coupling factor is logarithmically related to the physical width of the evanescent region normalised by the radius at which the evanescent zone is located. Finally, the local density contrast at the edge of the core of red-giant branch models shows a tentative correlation with the offset ɛg. Conclusions: We are continuing to exploit the full potential of the mixed modes to investigate the internal structures of red-giant stars; in this case we focus on the evanescent zone. It remains, however, important to perform comparisons between observations and models with great care as the methods employed

Plasmonic and Photonic Modes Excitation in Graphene on Silicon Photonic Crystal Membrane

DEFF Research Database (Denmark)

Andryieuski, Andrei; Gu, Tingyi; Hao, Yufeng

. Being deposited on a silicon photonic crystal membrane graphene serves as a highly promising system for modern optoelectronics with rich variety of possible regimes. Depending on the relation between the photonic crystal lattice constant and wavelengths (plasmonic, photonic and free-space) we identify...... characterization. Measured data are well correlated with the numerical analysis. Combined graphene – silicon photonic crystal membranes can find applications for infrared absorbers, modulators, filters, sensors and photodetectors....... four different interaction schemes. We refer to them as metamaterial, plasmonic, photonic and diffraction grating regimes based on the principle character of light interactions with the graphene deposited on the Si photonic crystal membrane. The optimal configurations for resonant excitation of modes...

Compensating for evanescent modes and estimating characteristic impedance in waveguide acoustic impedance measurements

DEFF Research Database (Denmark)

Nørgaard, Kren Rahbek; Fernandez Grande, Efren

2017-01-01

The ear-canal acoustic impedance and reflectance are useful for assessing conductive hearing disorders and calibrating stimulus levels in situ. However, such probe-based measurements are affected by errors due to the presence of evanescent modes and incorrect estimates or assumptions regarding...... characteristic impedance. This paper proposes a method to compensate for evanescent modes in measurements of acoustic impedance, reflectance, and sound pressure in waveguides, as well as estimating the characteristic impedance immediately in front of the probe. This is achieved by adjusting the characteristic...... impedance and subtracting an acoustic inertance from the measured impedance such that the non-causality in the reflectance is minimized in the frequency domain using the Hilbert transform. The method is thus capable of estimating plane-wave quantities of the sought-for parameters by supplying only...

Evanescent wave assisted nanomaterial coating.

Science.gov (United States)

Mondal, Samir K; Pal, Sudipta Sarkar; Kumbhakar, Dharmadas; Tiwari, Umesh; Bhatnagar, Randhir

2013-08-01

In this work we present a novel nanomaterial coating technique using evanescent wave (EW). The gradient force in the EW is used as an optical tweezer for tweezing and self-assembling nanoparticles on the source of EW. As a proof of the concept, we have used a laser coupled etched multimode optical fiber, which generates EW for the EW assisted coating. The section-wise etched multimode optical fiber is horizontally and superficially dipped into a silver/gold nanoparticles solution while the laser is switched on. The fiber is left until the solution recedes due to evaporation leaving the fiber in air. The coating time usually takes 40-50 min at room temperature. The scanning electron microscope image shows uniform and thin coating of self-assembled nanoparticles due to EW around the etched section. A coating thickness optical fiber probes and other plasmonic circuits.

Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

Directory of Open Access Journals (Sweden)

Chung-Hua Chao

2013-01-01

Full Text Available This paper describes a fabrication and characterization of ultraviolet (UV photodetectors based on Ohmic contacts using Pt electrode onto the epitaxial ZnO (0002 thin film. Plasma enhanced chemical vapor deposition (PECVD system was employed to deposit ZnO (0002 thin films onto silicon substrates, and radio-frequency (RF magnetron sputtering was used to deposit Pt top electrode onto the ZnO thin films. The as-deposited Pt/ZnO nanobilayer samples were then annealed at 450∘C in two different ambients (argon and nitrogen to obtain optimal Ohmic contacts. The crystal structure, surface morphology, optical properties, and wettability of ZnO thin films were analyzed by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, atomic force microscopy (AFM, photoluminescence (PL, UV-Vis-NIR spectrophotometer, and contact angle meter, respectively. Moreover, the photoconductivity of the Pt/ZnO nanobilayers was also investigated for UV photodetector application. The above results showed that the optimum ZnO sample was synthesized with gas flow rate ratio of 1 : 3 diethylzinc [DEZn, Zn(C2H52] to carbon dioxide (CO2 and then combined with Pt electrode annealed at 450∘C in argon ambient, exhibiting good crystallinity as well as UV photo responsibility.

High resolution imaging of dielectric surfaces with an evanescent field optical microscope

NARCIS (Netherlands)

van Hulst, N.F.; Segerink, Franciscus B.; Bölger, B.

1992-01-01

An evanescent field optical microscope (EFOM) is presented which employs frustrated total internal reflection o­n a localized scale by scanning a dielectric tip in close proximity to a sample surface. High resolution images of dielectric gratings and spheres containing both topographic and

Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit.

Science.gov (United States)

Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V

2014-05-01

We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.

SPIN-POLARIZED PHOTOCURRENT THROUGH QUANTUM DOT PHOTODETECTOR

Directory of Open Access Journals (Sweden)

Nguyen Van Hieu

2017-11-01

Full Text Available The theory of the photocurrent through the photodetector based on a two-level semiconductor quantum dot (QD is presented. The analytical expressions of the matrix elements of the electronic transitions generated by the absorption of the circularly polarized photons are derived in the lowest order of the perturbation theory with respect to the electron tunneling interaction as well as the electron-photon interaction. From these expressions the mechanism of the generation of the spin-polarized of electrons in the photocurrent is evident. It follows that the photodetector based on the two-level semiconductor QD can be used as the model of a source of highly spinpolarized electrons.

Thiol passivation of MWIR type II superlattice photodetectors

Science.gov (United States)

Salihoglu, O.; Muti, A.; Aydinli, A.

2013-06-01

Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps leading to surface leakage currents that short circuit diode action. Good passivation, therefore, is critical in the fabrication of high performance devices. Silicondioxide has been the main stay of passivation for commercial photodetectors, deposited at high temperatures and high RF powers using plasma deposition techniques. In photodetectors based on III-V compounds, sulphur passivation has been shown to replace oxygen and saturate the dangling bonds. Despite its effectiveness, it degrades over time. More effort is required to create passivation layers which eliminate surface leakage current. In this work, we propose the use of sulphur based octadecanethiol (ODT), CH3(CH2)17SH, as a passivation layer for the InAs/GaSb superlattice photodetectors that acts as a self assembled monolayer (SAM). ODT SAMs consist of a chain of 18 carbon atoms with a sulphur atom at its head. ODT Thiol coating is a simple process that consist of dipping the sample into the solution for a prescribed time. Excellent electrical performance of diodes tested confirm the effectiveness of the sulphur head stabilized by the intermolecular interaction due to van der Walls forces between the long chains of ODT SAM which results in highly stable ultrathin hydrocarbon layers without long term degradation.

Cryogenic photodetectors

Science.gov (United States)

Chardin, G.

2000-03-01

Some of the most significant developments in cryogenic photodetectors are presented. In particular, the main characteristics of microbolometers involving Transition Edge- and NTD-sensors and offering resolutions of a few eV in the keV range, superconducting tunnel junction detectors with resolutions of the order of 10 eV or offering position sensitivity, and infrared bolometers with recent developments towards matrix detectors are discussed. Some of the recent achievements using large mass bolometers for gamma and neutron discriminating detectors, and future prospects of single photon detection in the far infrared using Single Electron Transistor devices are also presented.

Cryogenic photodetectors

CERN Document Server

Chardin, G

2000-01-01

Some of the most significant developments in cryogenic photodetectors are presented. In particular, the main characteristics of microbolometers involving Transition Edge- and NTD-sensors and offering resolutions of a few eV in the keV range, superconducting tunnel junction detectors with resolutions of the order of 10 eV or offering position sensitivity, and infrared bolometers with recent developments towards matrix detectors are discussed. Some of the recent achievements using large mass bolometers for gamma and neutron discriminating detectors, and future prospects of single photon detection in the far infrared using Single Electron Transistor devices are also presented.

MgNiO-based metal-semiconductor- metal ultraviolet photodetector

International Nuclear Information System (INIS)

Zhao Yanmin; Zhang Jiying; Jiang Dayong; Shan Chongxin; Zhang Zhenzhong; Yao Bin; Zhao Dongxu; Shen Dezhen

2009-01-01

In this study, we report the growth of Mg x Ni 1-x O thin films on quartz substrates by electron beam evaporation. The absorption edge shows a blue shift from 340 nm to 260 nm with increase in the Mg content from 0.2 to 0.8. A metal-semiconductor-metal structured photodetector is fabricated from the Mg 0.2 Ni 0.8 O film. At a bias of 5 V, the dark current of the photodetector is about 70 nA. The maximum responsivity is about 147.3 μA W -1 at 320 nm. In addition, the ultraviolet (UV) (320 nm) to visible (400 nm) rejection ratio is nearly two orders of magnitude. Based on these results, it is proposed that Mg x Ni 1-x O is a potential candidate for application in UV photodetectors. (fast track communication)

The properties of transparent TiO2 films for Schottky photodetector

Directory of Open Access Journals (Sweden)

Sung-Ho Park

2017-08-01

Full Text Available In this data, the properties of transparent TiO2 film for Schottky photodetector are presented for the research article, entitled as “High-performing transparent photodetectors based on Schottky contacts” (Patel et al., 2017 [1]. The transparent photoelectric device was demonstrated by using various Schottky metals, such as Cu, Mo and Ni. This article mainly shows the optical transmittance of the Ni-transparent Schottky photodetector, analyzed by the energy dispersive spectroscopy and interfacial TEM images for transparency to observe the interface between NiO and TiO2 film. The observation and analyses clearly show that no pinhole formation in the TiO2 film by Ni diffusion. The rapid thermal process is an effective way to form the quality TiO2 film formation without degradation, such as pinholes (Qiu et al., 2015 [2]. This thermal process may apply to form functional metal oxide layers for solar cells and photodetectors.

On use of radial evanescence remain term in kinematic hardening

International Nuclear Information System (INIS)

Geyer, P.

1995-10-01

A fine modelling of the material' behaviour can be necessary to study the mechanical strength of nuclear power plant' components under cyclic loads. Ratchetting is one of the last phenomena for which numerical models have to be improved. We discuss in this paper on use of radial evanescence remain term in kinematic hardening to improve the description of ratchetting in biaxial loading tests. It's well known that Chaboche elastoplastic model with two non linear kinematic hardening variables initially proposed by Armstrong and Frederick, usually over-predicts accumulation of ratchetting strain. Burlet and Cailletaud proposed in 1987 a non linear kinematic rule with a radial evanescence remain term. The two models lead to identical formulation for proportional loadings. In the case of a biaxial loading test (primary+secondary loading), Burlet and Cailletaud model leads to accommodation, when Chaboche one's leads to ratchetting with a constant increment of strain. So we can have an under-estimate with the first model and an over-estimate with the second. An easy method to improve the description of ratchetting is to combine the two kinematic rules. Such an idea is already used by Delobelle in his model. With analytical results in the case of tension-torsion tests, we show in a first part of the paper, the interest of radial evanescence remain term in the non linear kinematic rule to describe ratchetting: we give the conditions to get adaptation, accommodation or ratchetting and the value of the strain increment in the last case. In the second part of the paper, we propose to modify the elastoplastic Chaboche model by coupling the two types of hardening by means of two scalar parameters which can be identified independently on biaxial loading tests. Identification of these two parameters returns to speculate on the directions of strain in order to adjust the ratchetting to experimental observations. We use the experimental results on the austenitic steel 316L at room

Silicon photonic crystal nanostructures for refractive index sensing

DEFF Research Database (Denmark)

Dorfner, Dominic; Hürlimann, T.; Zabel, T.

2008-01-01

The authors present the fabrication and optical investigation of Silicon on Insulator photonic crystal drop-filters for use as refractive index sensors. Two types of defect nanocavities (L3 and H1-r) are embedded between two W1 photonic crystal waveguides to evanescently route light at the cavity...... mode frequency between input and output waveguides. Optical characterization of the structures in air and various liquids demonstrate detectivities in excess of n=n = 0:018 and n=n = 0:006 for the H1-r and L3 cavities, respectively. The measured cavity-frequencies and detector refractive index...... responsivities are in good agreement with simulations, demonstrating that the method provides a background free transducer signal with frequency selective addressing of a specic area of the sensor chip....

Evanescent magnetic field effects on entropy generation at the onset ...

Indian Academy of Sciences (India)

This paper numerically investigates the effect of an externally evanescent magnetic field on total entropy generation in a fluid enclosed in a square cavity by using a control volume finite element method to solve the conservation equations at Prandtl number of 0·71. The values of relaxation time of the magnetic field are ...

MgNiO-based metal-semiconductor- metal ultraviolet photodetector

Energy Technology Data Exchange (ETDEWEB)

Zhao Yanmin; Zhang Jiying; Jiang Dayong; Shan Chongxin; Zhang Zhenzhong; Yao Bin; Zhao Dongxu; Shen Dezhen, E-mail: zhangjy53@yahoo.com.c [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

2009-05-07

In this study, we report the growth of Mg{sub x}Ni{sub 1-x}O thin films on quartz substrates by electron beam evaporation. The absorption edge shows a blue shift from 340 nm to 260 nm with increase in the Mg content from 0.2 to 0.8. A metal-semiconductor-metal structured photodetector is fabricated from the Mg{sub 0.2}Ni{sub 0.8}O film. At a bias of 5 V, the dark current of the photodetector is about 70 nA. The maximum responsivity is about 147.3 {mu}A W{sup -1} at 320 nm. In addition, the ultraviolet (UV) (320 nm) to visible (400 nm) rejection ratio is nearly two orders of magnitude. Based on these results, it is proposed that Mg{sub x}Ni{sub 1-x}O is a potential candidate for application in UV photodetectors. (fast track communication)

High-Performance Single-Crystalline Perovskite Thin-Film Photodetector

KAUST Repository

Yang, Zhenqian

2018-01-10

The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Varavin, V. S.; Vasilyev, V. V.; Guzev, A. A.; Dvoretsky, S. A.; Kovchavtsev, A. P.; Marin, D. V.; Sabinina, I. V.; Sidorov, Yu. G.; Sidorov, G. Yu.; Tsarenko, A. V.; Yakushev, M. V., E-mail: yakushev@isp.nsc.ru [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2016-12-15

The parameters of multilayer Cd{sub x}Hg{sub 1–x}Te heterostructures for photodetectors operating at wavelengths of up to 5 μm, grown by molecular-beam epitaxy (MBE) on silicon substrates, are studied. The passivating properties of thin CdTe layers on the surface of these structures are analyzed by measuring the C–V characteristics. The temperature dependences of the minority carrier lifetime in the photoabsorption layer after growth and thermal annealing are investigated. Samples of p{sup +}–n-type photodiodes are fabricated by the implantation of arsenic ions into n-type layers, doped with In to a concentration of (1–5) × 10{sup 15} cm{sup –3}. The temperature dependences of the reverse currents are measured at several bias voltages; these currents turn out to be almost two orders of magnitude lower than those for n{sup +}–p-type diodes.

Sensitive, Fast, and Stable Perovskite Photodetectors Exploiting Interface Engineering

KAUST Repository

Sutherland, Brandon R.

2015-08-19

© 2015 American Chemical Society. Organometallic halide perovskites are a class of solution-processed semiconductors exhibiting remarkable optoelectronic properties. They have seen rapid strides toward enabling efficient third-generation solar cell technologies. Here, we report the first material-tailoring of TiO2/perovskite/spiro-OMeTAD junction-based photodiodes toward applications in photodetection, a field in need of fast, sensitive, low-cost, spectrally tunable materials that offer facile integration across a broad range of substrates. We report photodetection that exhibits 1 μs temporal response, and we showcase stable operation in the detection of over 7 billion transient light pulses through a continuous pulsed-illumination period. The perovskite diode photodetector has a peak responsivity approaching 0.4 A W^-1 at 600 nm wavelength, which is superior to red light detection in crystalline silicon photodiodes used in commercial image sensors. Only by developing a composite Al2O3/PCBM front contact interface layer were we able to stabilize device operation in air, reduce dark current, and enhance the responsivity in the low-bias regime to achieve an experimentally measured specific detectivity of 10¹² Jones.

Evanescent-wave proton postaccelerator driven by intense THz pulse

OpenAIRE

L. Pálfalvi; J. A. Fülöp; Gy. Tóth; J. Hebling

2014-01-01

Hadron therapy motivates research dealing with the production of particle beams with ∼100  MeV/nucleon energy and relative energy fluctuation on the order of 1%. Laser-driven accelerators produce ion beams with only tens of MeV/nucleon energy and an extremely broad spectra. Here, a novel method is proposed for postacceleration and monochromatization of particles, leaving the laser-driven accelerator, by using intense THz pulses. It is based on further developing the idea of using the evanesce...

Photovoltaic-Pyroelectric Coupled Effect Induced Electricity for Self-Powered Photodetector System.

Science.gov (United States)

Ma, Nan; Zhang, Kewei; Yang, Ya

2017-12-01

Ferroelectric materials have demonstrated novel photovoltaic effect to scavenge solar energy. However, most of the ferroelectric materials with wide bandgaps (2.7-4 eV) suffer from low power conversion efficiency of less than 0.5% due to absorbing only 8-20% of solar spectrum. Instead of harvesting solar energy, these ferroelectric materials can be well suited for photodetector applications, especially for sensing near-UV irradiations. Here, a ferroelectric BaTiO 3 film-based photodetector is demonstrated that can be operated without using any external power source and a fast sensing of 405 nm light illumination is enabled. As compared with photovoltaic effect, both the responsivity and the specific detectivity of the photodetector can be dramatically enhanced by larger than 260% due to the light-induced photovoltaic-pyroelectric coupled effect. A self-powered photodetector array system can be utilized to achieve spatially resolved light intensity detection by recording the output voltage signals as a mapping figure. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Evanescent Wave Fiber Optic Biosensor for Salmonella Detection in Food

Directory of Open Access Journals (Sweden)

Arun K. Bhunia

2009-07-01

Full Text Available Salmonella enterica is a major food-borne pathogen of world-wide concern. Sensitive and rapid detection methods to assess product safety before retail distribution are highly desirable. Since Salmonella is most commonly associated with poultry products, an evanescent wave fiber-optic assay was developed to detect Salmonella in shell egg and chicken breast and data were compared with a time-resolved fluorescence (TRF assay. Anti-Salmonella polyclonal antibody was immobilized onto the surface of an optical fiber using biotin-avidin interactions to capture Salmonella. Alexa Fluor 647-conjugated antibody (MAb 2F-11 was used as the reporter. Detection occurred when an evanescent wave from a laser (635 nm excited the Alexa Fluor and the fluorescence was measured by a laser-spectrofluorometer at 710 nm. The biosensor was specific for Salmonella and the limit of detection was established to be 103 cfu/mL in pure culture and 104 cfu/mL with egg and chicken breast samples when spiked with 102 cfu/mL after 2–6 h of enrichment. The results indicate that the performance of the fiber-optic sensor is comparable to TRF, and can be completed in less than 8 h, providing an alternative to the current detection methods.

Evanescent waves and deaf bands in sonic crystals

Science.gov (United States)

Romero-García, V.; Garcia-Raffi, L. M.; Sánchez-Pérez, J. V.

2011-12-01

The properties of sonic crystals (SC) are theoretically investigated in this work by solving the inverse problem k(ω) using the extended plane wave expansion (EPWE). The solution of the resulting eigenvalue problem gives the complex band structure which takes into account both the propagating and the evanescent modes. In this work we show the complete mathematical formulation of the EPWE for SC and the supercell approximation for its use in both a complete SC and a SC with defects. As an example we show a novel interpretation of the deaf bands in a complete SC in good agreement with multiple scattering simulations.

Evanescent wave sensing and absorption analysis of herbal tea floral extracts in the presence of silver metal complexes

Science.gov (United States)

Priyamvada, V. C.; Radhakrishnan, P.

2017-06-01

Fiber optic evanescent wave sensors are used for studying the absorption properties of biochemical samples. The studies give precise information regarding the actual ingredients of the samples. Recent studies report the corrosion of silver in the presence glucose dissolved in water and heated to a temperature of 70°C. Based on this report evanescent absorption studies are carried out in hibiscus herbal tea floral extracts in the presence of silver metal complexes. These studies can also lead to the evaluation of the purity of the herbal tea extract.

Hexagonal-like Nb2O5 Nanoplates-Based Photodetectors and Photocatalyst with High Performances

Science.gov (United States)

Liu, Hui; Gao, Nan; Liao, Meiyong; Fang, Xiaosheng

2015-01-01

Ultraviolet (UV) photodetectors are important tools in the fields of optical imaging, environmental monitoring, and air and water sterilization, as well as flame sensing and early rocket plume detection. Herein, hexagonal-like Nb2O5 nanoplates are synthesized using a facile solvothermal method. UV photodetectors based on single Nb2O5 nanoplates are constructed and the optoelectronic properties have been probed. The photodetectors show remarkable sensitivity with a high external quantum efficiency (EQE) of 9617%, and adequate wavelength selectivity with respect to UV-A light. In addition, the photodetectors exhibit robust stability and strong dependence of photocurrent on light intensity. Also, a low-cost drop-casting method is used to fabricate photodetectors based on Nb2O5 nanoplate film, which exhibit singular thermal stability. Moreover, the hexagonal-like Nb2O5 nanoplates show significantly better photocatalytic performances in decomposing Methylene-blue and Rhdamine B dyes than commercial Nb2O5.

Infrared photodetectors based on reduced graphene oxide nanoparticles and graphene oxide

Science.gov (United States)

Ahmad, H.; Tajdidzadeh, M.; Thambiratnam, K.; Yasin, M.

2018-06-01

Two photodiode (PD) designs incorporating graphene oxide (GO) and reduced graphene oxide (rGO) are proposed and fabricated. Both PDs have 50 mm thick silver electrodes deposited on the active area, and another electrode consisting of either GO or rGO nanoparticles (NPs). The GO and rGO NPs are deposited onto the p-type silicon substrate by the drop casting method. Both fabricated PDs show good sensitivity and quick responses under 974 nm laser illumination at 150 mW. The photoresponsivity values and external quantum efficiency of both photodetectors are measured to be approximately 800 µAw‑1 and 0.12% for the GO based PD and 1.6 m Aw‑1 and 0.20% for the rGO based PD. Both PDs also have response and recovery times of 114 µs and 276 µs as well as 11 µs and 678 µs for the GO and rGO based PDs respectively. The proposed PDs would have significant applications in many optoelectronic devices as well as nanoelectronics.

Evanescent wave scattering at off-axis incidence on multiple cylinders located near a surface

International Nuclear Information System (INIS)

Lee, Siu-Chun

2015-01-01

The scattering characteristics of an infinite cylinder are strongly influenced by the incidence angle relative to its axis. If the incident wave propagates in the plane normal to the axis of the cylinder, the polarization of the scattered wave remains unchanged and the scattered wave propagates in the same plan as the incident wave. At off-axis incidence such that the incident direction makes an oblique angle with the cylinder axis, the scattered wave is depolarized, and its spatial distribution becomes three-dimensional. This paper presents the scattering solution for oblique incidence on multiple parallel cylinders located near a planar interface by an evanescent wave that is generated by total internal reflection of the source wave propagating in the higher refractive index substrate. Hertz potentials are utilized to formulate the interaction of inhomogeneous waves with the cylinders, scattering at the substrate interface, and near field scattering between the cylinders. Analytic formulas are derived for the electromagnetic fields and Poynting vector of scattered radiation in the near-field and their asymptotic forms in the far-field. Numerical examples are shown to illustrate scattering of evanescent wave by multiple cylinders at off-axis incidence. - Highlights: • Developed an exact solution for off-axis incidence on multiple cylinders. • Included depolarization, near-field scattering, and Fresnel effect in theory. • Derived analytic formulas for scattered radiation in the far field. • Illustrated evanescent scattering at off-axis incidence by numerical data

Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus.

Science.gov (United States)

Long, Mingsheng; Gao, Anyuan; Wang, Peng; Xia, Hui; Ott, Claudia; Pan, Chen; Fu, Yajun; Liu, Erfu; Chen, Xiaoshuang; Lu, Wei; Nilges, Tom; Xu, Jianbin; Wang, Xiaomu; Hu, Weida; Miao, Feng

2017-06-01

The mid-infrared (MIR) spectral range, pertaining to important applications, such as molecular "fingerprint" imaging, remote sensing, free space telecommunication, and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high-cost photodetectors requiring cryogenic operation. We report black arsenic phosphorus-based long-wavelength IR photodetectors, with room temperature operation up to 8.2 μm, entering the second MIR atmospheric transmission window. Combined with a van der Waals heterojunction, room temperature-specific detectivity higher than 4.9 × 10 9 Jones was obtained in the 3- to 5-μm range. The photodetector works in a zero-bias photovoltaic mode, enabling fast photoresponse and low dark noise. Our van der Waals heterojunction photodetectors not only exemplify black arsenic phosphorus as a promising candidate for MIR optoelectronic applications but also pave the way for a general strategy to suppress 1/ f noise in photonic devices.

Large-aperture hybrid photo-detector

International Nuclear Information System (INIS)

Kawai, Y.; Nakayama, H.; Kusaka, A.; Kakuno, H.; Abe, T.; Iwasaki, M.; Aihara, H.; Tanaka, M.; Shiozawa, M.; Kyushima, H.; Suyama, M.

2007-01-01

We have developed the first complete large-aperture (13-inch diameter) hybrid photo-detector (HPD). The withstanding voltage problem has been overcome and we were able to attain an HPD operating voltage of +20 kV. Adoption of our newly developed backside illumination avalanche diode (AD) was also critical in successfully countering the additional problem of an increase in AD leakage after the activation process. We observed single photon signal timing jitter of under 450 ps in FWHM, electron transit time of ∼12 ns, and clear pulse height separation up to several photoelectron peaks, all greatly superior to the performance of any conventional large-aperture photomultiplier tubes (PMTs). In addition, our HPD has a much simpler structure than conventional large-aperture PMTs, which simplifies mass production and lowers manufacturing cost. We believe that these attributes position our HPD as the most suitable photo-detector for the next generation mega-ton class water-Cherenkov detector, which is expected to be more than 20x larger than the Super-Kamiokande (SK) detector

Submonolayer Quantum Dot Infrared Photodetector

Science.gov (United States)

Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

2010-01-01

A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

Energy Technology Data Exchange (ETDEWEB)

Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2015-12-14

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

Surface delivery of a single nanoparticle under moving evanescent standing-wave illumination

Czech Academy of Sciences Publication Activity Database

Šiler, Martin; Čižmár, Tomáš; Jonáš, Alexandr; Zemánek, Pavel

2008-01-01

Roč. 10, č. 11 (2008), 113010: 1-16 ISSN 1367-2630 R&D Projects: GA MŠk(CZ) LC06007; GA MŠk OC08034 Institutional research plan: CEZ:AV0Z20650511 Keywords : nanoparticle * evanescent field * standing-wave illumination * surface delivery Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.440, year: 2008

Doppleron resonances in the diffraction of atoms by an evanescent field

International Nuclear Information System (INIS)

Murphy, J.E.; Hollenberg, L.C.L.; Smith, A.E.

1994-01-01

The diffracted intensities of sodium atoms by a standing evanescent light wave near the three doppleron resonance are calculated using a multi-slice technique. This calculation predicts a sharp dip in the reflected intensity of the specular beam for a detuning slightly below resonance. Such phenomena has been observed experimentally and can be understood using the dressed state picture. 4 refs., 2 tabs., 3 figs

Polymer slab waveguides for the optical detection of nanoparticles in evanescent field based biosensors

NARCIS (Netherlands)

Teigell Beneitez, N.; Missinne, J.; Schleipen, J.J.H.B.; Orsel, J.G.; Prins, M.W.J.; Steenberge, Van G.; Cartwright, A.N.; Nicolau, D.V.

2010-01-01

We present a polymer optical waveguide integration technology for the detection of nanoparticles in an evanescent field based biosensor. In the proposed biosensor concept, super-paramagnetic nanoparticles are used as optical contrast labels. The nanoparticles capture target molecules from a sample

Evanescent Acoustic Wave Scattering by Targets and Diffraction by Ripples Graduate Traineeship Award in Ocean Acoustics

National Research Council Canada - National Science Library

Osterhoudt, Curtis F; Marston, Philip L

2007-01-01

.... The purpose of his research was to improve the understanding of the way that acoustic evanescent waves interact with targets buried in sediments in situations encountered in underwater acoustics...

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

Directory of Open Access Journals (Sweden)

Carla Aramo

2015-03-01

Full Text Available A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube–silicon (CNT–Si heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise.

Evanescent waves and deaf bands in sonic crystals

Directory of Open Access Journals (Sweden)

V. Romero-García

2011-12-01

Full Text Available The properties of sonic crystals (SC are theoretically investigated in this work by solving the inverse problem k(ω using the extended plane wave expansion (EPWE. The solution of the resulting eigenvalue problem gives the complex band structure which takes into account both the propagating and the evanescent modes. In this work we show the complete mathematical formulation of the EPWE for SC and the supercell approximation for its use in both a complete SC and a SC with defects. As an example we show a novel interpretation of the deaf bands in a complete SC in good agreement with multiple scattering simulations.

Photonic crystal fiber based evanescent-wave sensor for detection of biomolecules in aqueous solutions

DEFF Research Database (Denmark)

Jensen, Jesper Bo Damm; Pedersen, Lars H.; Hoiby, Poul E.

2004-01-01

We demonstrate highly efficient evanescent-wave detection of fluorophore-labeled biomolecules in aqueous solutions positioned in the air holes of the microstructured part of a photonic crystal fiber. The air-suspended silica structures located between three neighboring air holes in the cladding c...

Highly Deformable Origami Paper Photodetector Arrays

KAUST Repository

Lin, Chun-Ho

2017-09-25

Flexible electronics will form the basis of many next-generation technologies, such as wearable devices, biomedical sensors, the Internet of things, and more. However, most flexible devices can bear strains of less than 300% as a result of stretching. In this work, we demonstrate a simple and low-cost paper-based photodetector array featuring superior deformability using printable ZnO nanowires, carbon electrodes, and origami-based techniques. With a folded Miura structure, the paper photodetector array can be oriented in four different directions via tessellated parallelograms to provide the device with excellent omnidirectional light harvesting capabilities. Additionally, we demonstrate that the device can be repeatedly stretched (up to 1000% strain), bent (bending angle ±30°), and twisted (up to 360°) without degrading performance as a result of the paper folding technique, which enables the ZnO nanowire layers to remain rigid even as the device is deformed. The origami-based strategy described herein suggests avenues for the development of next-generation deformable optoelectronic applications.

Chalcogen doping of silicon via intense femtosecond-laser irradiation

International Nuclear Information System (INIS)

Sheehy, Michael A.; Tull, Brian R.; Friend, Cynthia M.; Mazur, Eric

2007-01-01

We have previously shown that doping silicon with sulfur via femtosecond-laser irradiation leads to near-unity absorption of radiation from ultraviolet wavelengths to below band gap short-wave infrared wavelengths. Here, we demonstrate that doping silicon with two other group VI elements (chalcogens), selenium and tellurium, also leads to near-unity broadband absorption. A powder of the chalcogen dopant is spread on the silicon substrate and irradiated with femtosecond-laser pulses. We examine and compare the resulting morphology, optical properties, and chemical composition for each chalcogen-doped substrate before and after thermal annealing. Thermal annealing reduces the absorption of below band gap radiation by an amount that correlates with the diffusivity of the chalcogen dopant used to make the sample. We propose a mechanism for the absorption of below band gap radiation based on defects in the lattice brought about by the femtosecond-laser irradiation and the presence of a supersaturated concentration of chalcogen dopant atoms. The selenium and tellurium doped samples show particular promise for use in infrared photodetectors as they retain most of their infrared absorptance even after thermal annealing-a necessary step in many semiconductor device manufacturing processes

Radiation defect formation in two-barrier structures based on silicon

International Nuclear Information System (INIS)

Madatov, R.S.; Abbasov, F.P.; Mustafayev, Yu.M.

2013-01-01

It was developed a silicon-based photodetector with high integral sensitivity in low-wave spectrum. It was investigated the effect of gamma radiation on the mechanism of current transport in the structure of Schottky barrier type and in transitions. It is shown that the double-barrier structures can improve the photovoltaic parameters of conventional detectors. For the first time it was obtained and studied the characteristics of two-barrier structures created on the same plane. The advantages over conventional structures are shown. The annealing point is changing the structure of radiation defects and leads to their disappearance

High-speed 1.3 -1.55 um InGaAs/InP PIN photodetector for microwave photonics

Science.gov (United States)

Kozyreva, O. A.; Solov'ev, Y. V.; Polukhin, I. S.; Mikhailov, A. K.; Mikhailovskiy, G. A.; Odnoblyudov, M. A.; Gareev, E. Z.; Kolodeznyi, E. S.; Novikov, I. I.; Karachinsky, L. Ya; Egorov, A. Yu; Bougrov, V. E.

2017-11-01

We have fabricated the 1.3-1.55 um PIN photodetector based on InGaAs/InP heterostructure. Measurement results of optical and electrical characteristics of PIN photodetector chip were the following: photoconductivity at 1550 nm was 0.65 A/W and internal capacitance was 0.025 pF. Microwave model of photodetector was developed and verified by measurements of scattering matrix. The implementation of broadband (up to 20 GHz) hybrid integrated matching and biasing circuit for high-speed photodetector is presented.

Silicon opto-electronic wavelength tracker based on an asymmetric 2x3 Mach-Zehnder Interferometer

OpenAIRE

Doménech Gómez, José David; Sanchez Fandiño, Javier Antonio; Gargallo Jaquotot, Bernardo Andrés; Baños Lopez, Rocio; Muñoz Muñoz, Pascual

2014-01-01

In this paper we report on the experimental demonstration of a Silicon-on-Insulator opto-electronic wavelength tracker for the optical telecommunication C-band. The device consist of a 2x3 Mach-Zehnder Interferometer (MZI) with 10 pm resolution and photo-detectors integrated on the same chip. The MZI is built interconnecting two Multimode Interference (MMI) couplers with two waveguides whose length difference is 56 mm. The first MMI has a coupling ratio of 95:05 to com...

Infrared hot-electron NbN superconducting photodetectors for imaging applications

International Nuclear Information System (INIS)

Il'in, K.S.; Gol'tsman, G.N.; Verevkin, A.A.; Sobolewski, Roman

1999-01-01

We report an effective quantum efficiency of 340, responsivity >200 A W -1 (>10 4 V W -1 ) and response time of 27±5 ps at temperatures close to the superconducting transition for NbN superconducting hot-electron photodetectors (HEPs) in the near-infrared and optical ranges. Our studies were performed on a few nm thick NbN films deposited on sapphire substrates and patterned into μm-size multibridge detector structures, incorporated into a coplanar transmission line. The time-resolved photoresponse was studied by means of subpicosecond electro-optic sampling with 100 fs wide laser pulses. The quantum efficiency and responsivity studies of our photodetectors were conducted using an amplitude-modulated infrared beam, fibre-optically coupled to the device. The observed picosecond response time and the very high efficiency and sensitivity of the NbN HEPs make them an excellent choice for infrared imaging photodetectors and input optical-to-electrical transducers for superconducting digital circuits. (author)

A study on high NA and evanescent imaging with polarized illumination

Science.gov (United States)

Yang, Seung-Hune

Simulation techniques are developed for high NA polarized microscopy with Babinet's principle, partial coherence and vector diffraction for non-periodic geometries. A mathematical model for the Babinet approach is developed and interpreted. Simulation results of the Babinet's principle approach are compared with those of Rigorous Coupled Wave Theory (RCWT) for periodic structures to investigate the accuracy of this approach and its limitations. A microscope system using a special solid immersion lens (SIL) is introduced to image Blu-Ray (BD) optical disc samples without removing the protective cover layer. Aberration caused by the cover layer is minimized with a truncated SIL. Sub-surface imaging simulation is achieved by RCWT, partial coherence, vector diffraction and Babinet's Principle. Simulated results are compared with experimental images and atomic force microscopy (AFM) measurement. A technique for obtaining native and induced using a significant amount of evanescent energy is described for a solid immersion lens (SIL) microscope. Characteristics of native and induced polarization images for different object structures and materials are studied in detail. Experiments are conducted with a NA = 1.48 at lambda = 550nm microscope. Near-field images are simulated and analyzed with an RCWT approach. Contrast curve versus object spatial frequency calculations are compared with experimental measurements. Dependencies of contrast versus source polarization angles and air gap for native and induced polarization image profiles are evaluated. By using the relationship between induced polarization and topographical structure, an induced polarization image of an alternating phase shift mask (PSM) is converted into a topographical image, which shows very good agreement with AFM measurement. Images of other material structures include a dielectric grating, chrome-on-glass grating, silicon CPU structure, BD-R and BD-ROM.

Flexible ultraviolet photodetectors based on ZnO-SnO2 heterojunction nanowire arrays

Science.gov (United States)

Lou, Zheng; Yang, Xiaoli; Chen, Haoran; Liang, Zhongzhu

2018-02-01

A ZnO-SnO2 nanowires (NWs) array, as a metal oxide semiconductor, was successfully synthesized by a near-field electrospinning method for the applications as high performance ultraviolet photodetectors. Ultraviolet photodetectors based on a single nanowire exhibited excellent photoresponse properties to 300 nm ultraviolet light illumination including ultrahigh I on/I off ratios (up to 103), good stability and reproducibility because of the separation between photo-generated electron-hole pairs. Moreover, the NWs array shows an enhanced photosensing performance. Flexible photodetectors on the PI substrates with similar tendency properties were also fabricated. In addition, under various bending curvatures and cycles, the as-fabricated flexible photodetectors revealed mechanical flexibility and good stable electrical properties, showing that they have the potential for applications in future flexible photoelectron devices. Project supported by the National Science Foundation of China (No. 61504136) and the State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine and Physics, Chinese Academy of Sciences.

Optimization of silicon waveguides for gas detection application at mid-IR wavelengths

Science.gov (United States)

Butt, M. A.; Kozlova, E. S.

2018-04-01

There are several trace gases such as N2O, CO, CO2, NO, H2O, NO2, NH3, CH4 etc. which have their absorption peaks in Mid-IR spectrum These gases strongly absorb in the mid-IR > 2.5 μm spectral region due to their fundamental rotational and vibrational transitions. In this work, we modelled and optimized three different kinds of waveguides such as rib, strip and slot based on silicon platform to obtain maximum evanescent field ratio. These waveguides are designed at 3.39 μm and 4.67 μm which correspond to the absorption line of methane (CH4) and carbon monoxide (CO) respectively.

Graphene based chalcogenide fiber-optic evanescent wave sensor for detection of hemoglobin in human blood

Science.gov (United States)

Sharma, Anuj K.; Gupta, Jyoti

2018-03-01

Fiber optic evanescent wave sensor with graphene as an absorption-enhancing layer to measure hemoglobin concentration in human blood is proposed. Previous modal functions and experimental results describing the variation of optical constants of human blood with different hemoglobin concentrations in the near-infrared spectral region are considered for sensor design simulation. The sensor's performance is closely analyzed in terms of its absorption coefficient, sensitivity, and detection limit. It is found that the proposed sensor should be operated at longer light wavelength to get more enhanced sensitivity and smaller detection limit. At 1000 nm wavelength, a detection limit of 18 μg/dL and sensitivity of 6.71 × 10-4 per g/dL is achievable with the proposed sensor. The sensitivity is found to be better for larger hemoglobin concentrations. The results are correlated with the evanescent wave penetration depth.

Barrier Engineered Quantum Dot Infrared Photodetectors

Science.gov (United States)

2015-06-01

251108. 6. Barve, Ajit V., Saumya Sengupta, Jun Oh Kim, John Montoya , Brianna Klein, Mohammad Ali Shirazi, Marziyeh Zamiri et al., "Barrier selection... H . Kim, Z-B. Tian, and Sanjay Krishna. "Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices." (2013

Reconfigurable optical-to-optical frequency conversion method and apparatus

Science.gov (United States)

Zortman, William A.; Lentine, Anthony L.

2017-04-18

A photonic device is provided for impressing a modulation pattern on an optical carrier. The device includes a unit in which a photodetector and an optical microresonator are monolithically integrated. The device further includes an optical waveguide evanescently coupled to the optical microresonator and having at least an upstream portion configured to carry at least one optical carrier toward the microresonator. The optical microresonator is tunable so as to resonate with the optical carrier frequency. The optical microresonator and the photodetector are mutually coupled such that in operation, charge carriers photogenerated in the photodetector are injected into the microresonator, where the photocurrent changes the resonant conditions. In some embodiments the device is operable as an optical-to-optical frequency converter. In other embodiments the device is operable as an oscillator.

Hadron calorimeter (PSD) with new photo-detectors (MPPC) in NA61 experiment at CERN

Science.gov (United States)

Golubeva, M.; Guber, F.; Ivashkin, A.; Izvestnyy, A.; Kurepin, A.; Morozov, S.; Petukhov, O.; Selyuzhenkov, I.; Svintsov, I.; Taranenko, A.

2017-01-01

The Projectile Spectator Detector (PSD) is a segmented hadron calorimeter used in NA61 experiment (CERN) to determine a collision centrality as well as an event plane orientation in nucleus-nucleus collisions. The main goal of the experiment includes studying the onset of de-confinement and searching for the critical point of strongly interacting matter. It is of crucial importance to have a precise characterization of the event class with the PSD for the analysis of event-by-event observables. The PSD has been already used for centrality selection on trigger level in measurements of Be+Be and Ar+Sc reactions at beam energies 13 - 158 AGeV and Pb+Pb reaction at beam energy 30 AGeV. In 2016, the central modules of PSD have been equipped with new Hamamatsu MPPC silicon photo-detectors in order to extend dynamic range for studying Pb+Pb reaction at the full energy range 13 - 158 AGeV. Results of the PSD response on proton and lead beams are presented.

Black phosphorus saturable absorber for ultrafast mode-locked pulse laser via evanescent field interaction

Energy Technology Data Exchange (ETDEWEB)

Park, Kichul; Lee, Young Tack; Choi, Won-Kook; Song, Yong-Won [Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Lee, Junsu; Lee, Ju Han [School of Electrical and Computer Engineering, University of Seoul (Korea, Republic of)

2015-12-15

Black phosphorus, or BP, has found a lot of applications in recent years including photonics. The most recent studies have shown that the material has an excellent optical nonlinearity useful in many areas, one of which is in saturable absorption for passive mode-locking. A direct interaction scheme for mode-locking, however, has a potential to optically cause permanent damage to the already delicate material. Evanescent field interaction scheme has already been proven to be a useful method to prevent such danger for other 2-dimensional nanomaterials. In this report, we have utilized the evanescent field interaction to demonstrate that the optical nonlinear characteristics of BP is sufficiently strong to use in such an indirect interaction method. The successful demonstration of the passive mode-locking operation has generated pulses with the pulse duration, repetition rate, and time bandwidth product of 2.18 ps, 15.59 MHz, and 0.336, respectively. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

2D/0D graphene hybrids for visible-blind flexible UV photodetectors.

Science.gov (United States)

Tetsuka, Hiroyuki

2017-07-17

Nitrogen-functionalized graphene quantum dots (NGQDs) are attractive building blocks for optoelectronic devices because of their exceptional tunable optical absorption and fluorescence properties. Here, we developed a high-performance flexible NGQD/graphene field-effect transistor (NGQD@GFET) hybrid ultraviolet (UV) photodetector, using dimethylamine-functionalized GQDs (NMe 2 -GQDs) with a large bandgap of ca. 3.3 eV. The NMe 2 -GQD@GFET photodetector exhibits high photoresponsivity and detectivity of ca. 1.5 × 10 4  A W -1 and ca. 5.5 × 10 11 Jones, respectively, in the deep-UV region as short as 255 nm without application of a backgate voltage. The feasibility of these flexible UV photodetectors for practical application in flame alarms is also demonstrated.

Highly sensitive MOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane.

Science.gov (United States)

Chen, Yungting; Cheng, Tzuhuan; Cheng, Chungliang; Wang, Chunhsiung; Chen, Chihwei; Wei, Chihming; Chen, Yangfang

2010-01-04

A new approach for developing highly sensitive MOS photodetector based on the assistance of anodic aluminum oxide (AAO) membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the MOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Unlike general MOS photodetectors which only work under a reverse bias, our MOS photodetectors can work even under a forward bias, and the responsivity at the optical communication wavelength of 850nm can reach up to 0.24 A/W with an external quantum efficiency (EQE) of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.

High-Performance solar-blind flexible Deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation

KAUST Repository

Mitra, Somak

2018-03-31

High-performance deep ultraviolet (DUV) photodetectors operating at ambient conditions with < 280nm detection wavelengths are in high demand because of their potential applications in diverse fields. We demonstrate for the first time, high-performance flexible DUV photodetectors operating at ambient conditions based on quantum dots (QDs) synthesized by femtosecond-laser ablation in liquid (FLAL) technique. Our method is facile without complex chemical procedures, which allows large-scale cost-effective devices. This synthesis method is demonstrated to produce highly stable and reproducible ZnO QDs from zinc nitride target (Zn3N2) without any material degradation due to water and oxygen molecule species, allowing photodetectors operate at ambient conditions. Carbon-doped ZnO QD-based photodetector is capable of detecting efficiently in the DUV spectral region, down to 224nm, and exhibits high photo responsivity and stability. As fast response of DUV photodetector remains significant parameter for high-speed communication; we show fast-response QD-based DUV photodetector. Such surfactant-free synthesis by FLAL can lead to commercially available high-performance low-cost optoelectronic devices based on nanostructures for large scale applications.

Transparent, broadband, flexible, and bifacial-operable photodetectors containing a large-area graphene-gold oxide heterojunction.

Science.gov (United States)

Liu, Yu-Lun; Yu, Chen-Chieh; Lin, Keng-Te; Yang, Tai-Chi; Wang, En-Yun; Chen, Hsuen-Li; Chen, Li-Chyong; Chen, Kuei-Hsien

2015-05-26

In this study, we combine graphene with gold oxide (AuOx), a transparent and high-work-function electrode material, to achieve a high-efficient, low-bias, large-area, flexible, transparent, broadband, and bifacial-operable photodetector. The photodetector operates through hot electrons being generated in the graphene and charge separation occurring at the AuOx-graphene heterojunction. The large-area graphene covering the AuOx electrode efficiently prevented reduction of its surface; it also acted as a square-centimeter-scale active area for light harvesting and photodetection. Our graphene/AuOx photodetector displays high responsivity under low-intensity light illumination, demonstrating picowatt sensitivity in the ultraviolet regime and nanowatt sensitivity in the infrared regime for optical telecommunication. In addition, this photodetector not only exhibited broadband (from UV to IR) high responsivity-3300 A W(-1) at 310 nm (UV), 58 A W(-1) at 500 nm (visible), and 9 A W(-1) at 1550 nm (IR)-but also required only a low applied bias (0.1 V). The hot-carrier-assisted photoresponse was excellent, especially in the short-wavelength regime. In addition, the graphene/AuOx photodetector exhibited great flexibility and stability. Moreover, such vertical heterojunction-based graphene/AuOx photodetectors should be compatible with other transparent optoelectronic devices, suggesting applications in flexible and wearable optoelectronic technologies.

Insight on quantum dot infrared photodetectors

International Nuclear Information System (INIS)

Rogalski, A

2009-01-01

The paper presents possible future developments of quantum dot infrared photodetectors (QDIPs). At the beginning the fundamental properties of QDIPs are summarized. Next, investigations of the performance of QDIPs, as compared to other types of infrared photodetectors, are presented. Theoretical predictions indicate that only type II superlattice photodiodes and QDIPs are expected to compete with HgCdTe photodiodes. QDIPs theoretically have several advantages compared with QWIPs including the normal incidence response, lower dark current, higher operating temperature, higher responsivity and detectivity. The operating temperature for HgCdTe detectors is higher than for other types of photon detectors. Comparison of QDIP performance with HgCdTe detectors gives evidence that the QDIP is suitable for high operation temperature. It can be expected that an improvement in technology and design of QDIP detectors will make it possible to achieve both high sensitivity and fast response useful for practical application at room temperature focal plane arrays. However, so far the QDIP devices have not fully demonstrated their potential advantages.

Simulation of high SNR photodetector with L-C coupling and transimpedance amplifier circuit and its verification

Science.gov (United States)

Wang, Shaofeng; Xiang, Xiao; Zhou, Conghua; Zhai, Yiwei; Quan, Runai; Wang, Mengmeng; Hou, Feiyan; Zhang, Shougang; Dong, Ruifang; Liu, Tao

2017-01-01

In this paper, a model for simulating the optical response and noise performances of photodetectors with L-C coupling and transimpedance amplification circuit is presented. To verify the simulation, two kinds of photodetectors, which are based on the same printed-circuit-board (PCB) designing and PIN photodiode but different operational amplifiers, are developed and experimentally investigated. Through the comparisons between the numerical simulation results and the experimentally obtained data, excellent agreements are achieved, which show that the model provides a highly efficient guide for the development of a high signal to noise ratio photodetector. Furthermore, the parasite capacitances on the developed PCB, which are always hardly measured but play a non-negligible influence on the photodetectors' performances, are estimated.

Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection

Science.gov (United States)

Nazirzadeh, Mohammad Amin; Atar, Fatih Bilge; Turgut, Berk Berkan; Okyay, Ali Kemal

2014-01-01

In this work, we propose Silicon based broad-band near infrared Schottky barrier photodetectors. The devices operate beyond 1200 nm wavelength and exhibit photoresponsivity values as high as 3.5 mA/W with a low dark current density of about 50 pA/µm2. We make use of Au nanoislands on Silicon surface formed by rapid thermal annealing of a thin Au layer. Surface plasmons are excited on Au nanoislands and this field localization results in efficient absorption of sub-bandgap photons. Absorbed photons excite the electrons of the metal to higher energy levels (hot electron generation) and the collection of these hot electrons to the semiconductor results in photocurrent (internal photoemission). Simple and scalable fabrication makes these devices suitable for ultra-low-cost NIR detection applications. PMID:25407509

High-Performance Ultraviolet-to-Infrared Broadband Perovskite Photodetectors Achieved via Inter-/Intraband Transitions

KAUST Repository

Alwadai, Norah Mohammed Mosfer

2017-10-17

A high-performance vertically injected broadband UV-to-IR photodetector based on Gd-doped ZnO nanorods (NRs)/CH3NH3PbI3 perovskite heterojunction was fabricated on metal substrates. Our perovskite-based photodetector is sensitive to a broad spectral range, from ultraviolet to infrared light region (λ = 250–1357 nm). Such structure leads to a high photoresponsivity of 28 and 0.22 A/W, for white light and IR illumination, respectively, with high detectivity values of 1.1 × 1012 and 9.3 × 109 Jones. Optical characterizations demonstrate that the IR detection is due to intraband transition in the perovskite material. Metal substrate boosts carrier injection, resulting in higher responsivity compared to the conventional devices grown on glass, whereas the presence of Gd increases the ZnO NRs performance. For the first time, the perovskite-based photodetector is demonstrated to extend its detection capability to IR (>1000 nm) with high room temperature responsivity across the detected spectrum, leading to a high-performance ingenious cost-effective UV-to-IR broadband photodetector design for large-scale applications.

Self-powered photogalvanic phosphorene photodetectors with high polarization sensitivity and suppressed dark current.

Science.gov (United States)

Li, Shuaishuai; Wang, Tao; Chen, Xiaoshuang; Lu, Wei; Xie, Yiqun; Hu, Yibin

2018-04-26

High polarization sensitivity, suppressed dark current and low energy consumption are all desirable device properties for photodetectors. In this work, we propose phosphorene-based photodetectors that are driven using photogalvanic effects (PGEs). The inversion symmetry of pristine phosphorene is broken using either application of an out-of-plane gate voltage or a heterostructure that is composed of the original phosphorene and blue phosphorene. The potential asymmetry enables PGEs under illumination by polarized light. Quantum transport calculations show that robust photocurrents are indeed generated by PGEs under a zero external bias voltage because of the broken inversion symmetry. These results indicate that the proposed photodetector is self-powered. In addition, the zero bias voltage eliminates the dark currents that are caused by application of an external bias voltage to traditional photodetectors. High polarization sensitivity to both linearly and circularly polarized light can also be realized, with extinction ratios ranging up to 102. The photoresponse of the proposed phosphorene/blue phosphorene heterostructure can be greatly enhanced by gating and is several orders of magnitude higher than that in gated phosphorene.

Employment of a metal microgrid as a front electrode in a sandwich-structured photodetector.

Science.gov (United States)

Zhang, Junying; Cai, Chao; Pan, Feng; Hao, Weichang; Zhang, Weiwei; Wang, Tianmin

2009-07-01

A highly UV-transparent metal microgrid was prepared and employed as the front electrode in a sandwich-structured ultraviolet (UV) photodetector using TiO(2) thin film as the semiconductor layer. The photo-generated charger carriers travel a shorter distance before reaching the electrodes in comparison with a photodetector using large-spaced interdigitated metal electrodes (where distance between fingers is several to tens of micrometers) on the surface of the semiconductor film. This photodetector responds to UV light irradiation, and the photocurrent intensity increases linearly with the irradiation intensity below 0.2 mW/cm(2).

A Photovoltaic InAs Quantum-Dot Infrared Photodetector

International Nuclear Information System (INIS)

Guang-Hua, Tang; Bo, Xu; Li-Wen, Jiang; Jin-Xia, Kong; Ning, Kong; De-Chun, Liang; Ping, Liang; Xiao-Ling, Ye; Peng, Jin; Feng-Qi, Liu; Yong-Hai, Chen; Zhan-Guo, Wang

2010-01-01

A photovoltaic quantum dot infrared photodetector with InAs/GaAs/AlGaAs structures is reported. The detector is sensitive to normal incident light. At zero bias and 78K, a clear spectral response in the range of 2–7 μm has been obtained with peaks at 3.1, 4.8 and 5.7 μm. The bandgap energies of GaAs and Alo.2Gao.sAs at 78K are calculated and the energy diagram of the transitions in the Quantum-Dot Infrared Photodetector (QDIP) is given out. The photocurrent signals can be detected up to 110K, which is state-of-the-art for photovoltaic QDIP. The photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure

P3HT-graphene bilayer electrode for Schottky junction photodetectors

Science.gov (United States)

Aydın, H.; Kalkan, S. B.; Varlikli, C.; Çelebi, C.

2018-04-01

We have investigated the effect of a poly (3-hexylthiophene-2.5-diyl)(P3HT)-graphene bilayer electrode on the photoresponsivity characteristics of Si-based Schottky photodetectors. P3HT, which is known to be an electron donor and absorb light in the visible spectrum, was placed on CVD grown graphene by dip-coating method. The results of the UV-vis and Raman spectroscopy measurements have been evaluated to confirm the optical and electronic modification of graphene by the P3HT thin film. Current-voltage measurements of graphene/Si and P3HT-graphene/Si revealed rectification behavior confirming a Schottky junction formation at the graphene/Si interface. Time-resolved photocurrent spectroscopy measurements showed the devices had excellent durability and a fast response speed. We found that the maximum spectral photoresponsivity of the P3HT-graphene/Si photodetector increased more than three orders of magnitude compared to that of the bare graphene/Si photodetector. The observed increment in the photoresponsivity of the P3HT-graphene/Si samples was attributed to the charge transfer doping from P3HT to graphene within the spectral range between near-ultraviolet and near-infrared. Furthermore, the P3HT-graphene electrode was found to improve the specific detectivity and noise equivalent power of graphene/Si photodetectors. The obtained results showed that the P3HT-graphene bilayer electrodes significantly improved the photoresponsivity characteristics of our samples and thus can be used as a functional component in Si-based optoelectronic device applications.

Self-Powered, Flexible, and Solution-Processable Perovskite Photodetector Based on Low-Cost Carbon Cloth.

Science.gov (United States)

Sun, Haoxuan; Lei, Tianyu; Tian, Wei; Cao, Fengren; Xiong, Jie; Li, Liang

2017-07-01

Flexible perovskite photodetectors are usually constructed on indium-tin-oxide-coated polymer substrates, which are expensive, fragile, and not resistant to high temperature. Herein, for the first time, a high-performance flexible perovskite photodetector is fabricated based on low-cost carbon cloth via a facile solution processable strategy. In this device, perovskite microcrystal and Spiro-OMeTAD (hole transporting material) blended film act as active materials for light detection, and carbon cloth serves as both a flexible substrate and a conductive electrode. The as-fabricated photodetector shows a broad spectrum response from ultraviolet to near-infrared light, high responsivity, fast response speed, long-term stability, and self-powered capability. Flexible devices show negligible degradation after several tens of bending cycles and at the extremely bending angle of 180°. This work promises a new technique to construct flexible, high-performance photodetectors with low cost and self-powered capability. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hybrid III-V Silicon Lasers

Science.gov (United States)

Bowers, John

2014-03-01

Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

Structure fits the purpose: photonic crystal fibers for evanescent-field surface-enhanced Raman spectroscopy

Czech Academy of Sciences Publication Activity Database

Oo, M. K .K.; Han, Y.; Kaňka, Jiří; Sukhishvili, S.; Du, H.

2010-01-01

Roč. 35, č. 4 (2010), s. 466-468 ISSN 0146-9592 R&D Projects: GA ČR GA102/08/1719 Institutional research plan: CEZ:AV0Z20670512 Keywords : Photonic crystal fiber * Raman spectroscopy * Fiber-optic evanescent sensor Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 3.316, year: 2010

The Role of Ge Wetting Layer and Ge Islands in Si MSM Photodetectors

International Nuclear Information System (INIS)

Mahmodi, H.; Hashim, M. R.

2010-01-01

In this work, Ge thin films were deposited on silicon substrates by radio frequency magnetron sputtering to form Ge islands from Ge layer on Si substrate during post-growth rapid thermal annealing (RTA). The size of the islands decreases from 0.6 to 0.1 as the rapid thermal annealing time increases from 30 s to 60 s at 900 deg. C. Not only that the annealing produces Ge islands but also wetting layer. Energy Dispersive X-ray Spectroscopy (EDX) and Scanning Electron Microscopy (SEM) were employed for structural analysis of Ge islands. Metal-Semiconductor-Metal photodetectors (MSM PDs) were fabricated on Ge islands (and wetting layer)/Si. The Ge islands and wetting layer between the contacts of the fabricated devices are etched in order to see their effects on the device. The performance of the Ge islands MSM-PD was evaluated by dark and photo current-voltage (I-V) measurements at room temperature (RT). It was found that the device with island and wetting layer significantly enhance the current gain (ratio of photo current to dark current) of the device.

Simulation of optimum parameters for GaN MSM UV photodetector

Energy Technology Data Exchange (ETDEWEB)

Alhelfi, Mohanad A., E-mail: mhad12344@gmail.com; Ahmed, Naser M., E-mail: nas-tiji@yahoo.com; Hashim, M. R., E-mail: roslan@usm.my; Hassan, Z., E-mail: zai@usm.my [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia 11800 Penang (Malaysia); Al-Rawi, Ali Amer, E-mail: aliamer@unimap.edu.my [School of Computer and Communication Eng. 3st Floor, Pauh Putra Main Campus 02600 Arau, Perlis Malaysia (Malaysia)

2016-07-06

In this study the optimum parameters of GaN M-S-M photodetector are discussed. The evaluation of the photodetector depends on many parameters, the most of the important parameters the quality of the GaN film and others depend on the geometry of the interdigited electrode. In this simulation work using MATLAB software with consideration of the reflection and absorption on the metal contacts, a detailed study involving various electrode spacings (S) and widths (W) reveals conclusive results in device design. The optimum interelectrode design for interdigitated MSM-PD has been specified and evaluated by effect on quantum efficiency and responsivity.

Atypical presentation of multiple evanescent white dot syndrome (MEWDS).

Science.gov (United States)

Yenerel, Nursal Melda; Kucumen, Beril; Gorgun, Ebru; Dinc, Umut Asli

2008-01-01

To present fundus autofluorescence (FAF), indocyanine green angiography (ICGA), and microperimetry (MP) findings of a patient with multiple evanescent white dot syndrome (MEWDS). Observational case report. A 30-year-old woman with blurry vision was referred for evaluation. Fundus examination revealed only foveal granularity. FAF showed hyperautofluorescent spots, although they were not visible clinically. On ICGA, matching areas were hypofluorescent. Microperimetry revealed mean sensitivity decrease. The resolution of the symptoms was followed by disappearance of these spots in FAF and ICGA and increase of mean macular sensitivity in MP. FAF is a noninvasive imaging technique that might help in the differential diagnosis of chorioretinal pathologies.

Perovskite photodetectors with both visible-infrared dual-mode response and super-narrowband characteristics towards photo-communication encryption application.

Science.gov (United States)

Wu, Ye; Li, Xiaoming; Wei, Yi; Gu, Yu; Zeng, Haibo

2017-12-21

Photo-communication has attracted great attention because of the rapid development of wireless information transmission technology. However, it is still a great challenge in cryptography communications, where it is greatly weakened by the openness of the light channels. Here, visible-infrared dual-mode narrowband perovskite photodetectors were fabricated and a new photo-communication encryption technique was proposed. For the first time, highly narrowband and two-photon absorption (TPA) resultant photoresponses within a single photodetector are demonstrated. The full width at half maximum (FWHM) of the photoresponse is as narrow as 13.6 nm in the visible range, which is superior to state-of-the-art narrowband photodetectors. Furthermore, these two merits of narrowband and TPA characteristics are utilized to encrypt the photo-communication based on the above photodetectors. When sending information and noise signals with 532 and 442 nm laser light simultaneously, the perovskite photodetectors only receive the main information, while the commercial Si photodetector responds to both lights, losing the main information completely. The final data are determined by the secret key through the TPA process as preset. Such narrowband and TPA detection abilities endow the perovskite photodetectors with great potential in future security communication and also provide new opportunities and platforms for encryption techniques.

Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact

Energy Technology Data Exchange (ETDEWEB)

Babichev, A. V., E-mail: A.Babichev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Zhang, H.; Guan, N. [University Paris Saclay, Institut d’Electronique Fondamentale, UMR 8622 CNRS (France); Egorov, A. Yu. [ITMO University (Russian Federation); Julien, F. H.; Messanvi, A. [University Paris Saclay, Institut d’Electronique Fondamentale, UMR 8622 CNRS (France); Durand, C.; Eymery, J. [University Grenoble Alpes (France); Tchernycheva, M. [University Paris Saclay, Institut d’Electronique Fondamentale, UMR 8622 CNRS (France)

2016-08-15

We report the fabrication and optical and electrical characterization of photodetectors for the UV spectral range based on single p–n junction nanowires with a transparent contact of a new type. The contact is based on CVD-grown (chemical-vapor deposition) graphene. The active region of the nitride nanowires contains a set of 30 radial In{sub 0.18}Ga{sub 0.82}N/GaN quantum wells. The structure is grown by metal-organic vaporphase epitaxy. The photodetectors are fabricated using electron-beam lithography. The current–voltage characteristics exhibit a rectifying behavior. The spectral sensitivity of the photodetector is recorded starting from 3 eV and extending far in the UV range. The maximal photoresponse is observed at a wavelength of 367 nm (sensitivity 1.9 mA/W). The response switching time of the photodetector is less than 0.1 s.

Study of a coronagraphic mask using evanescent waves.

Science.gov (United States)

Buisset, Christophe; Rabbia, Yves; Lepine, Thierry; Alagao, Mary-Angelie; Ducrot, Elsa; Poshyachinda, Saran; Soonthornthum, Boonrucksar

2017-04-03

The evanescent wave coronagraph (EvWaCo) is a specific kind of band-limited coronagraph using the frustrated total internal reflection phenomenon to produce the coronagraphic effect (removing starlight from the image plane in order to make the stellar environment detectable). In this paper, we present a theoretical and experimental study of the EvWaCo coronagraphic mask. First, we calculate the theoretical transmission and we show that this mask is partially achromatic. Then, we present the experimental results obtained in unpolarized light at the wavelength λ≈900 nm and relative spectral bandwidth Δλ/λ≈6%. In particular, we show that the coronagraph provides a contrast down to a few 10-6 at an angular distance of about ten Airy radii.

Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

CERN Document Server

Saveliev, V

2000-01-01

The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10 sup 5 -10 sup 6) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

An efficient fast response and high-gain solar-blind flexible ultraviolet photodetector employing hybrid geometry

Science.gov (United States)

Hussain, Amreen A.; Pal, Arup R.; Patil, Dinkar S.

2014-05-01

We report high performance flexible hybrid ultraviolet photodetector with solar-blind sensitivity using nanocomposite film of plasma polymerized aniline-titanium dioxide. A facile solvent-free plasma technique is used to synthesize superior quality hybrid material with high yield. The hybrid photodetector exhibited high photoconductive gain of the order of ˜105 and fast speed with response and recovery time of 22.87 ms and 34.23 ms. This is an excellent result towards getting a balance in the response speed and photoconductive gain trade-off of the photodetectors reported so far. In addition, the device has the advantages of enhanced photosensitivity ((Ilight - Idark)/Idark) of the order of ˜102 and high responsivity of ˜104 AW-1. All the merits substantiates that, to prepare hybrid material, plasma based method holds potential to be an easy way for realizing large scale nanostructured photodetectors for practical applications.

Direct and inverse Staebler-Wronski effects observed in carbon-doped hydrogenated amorphous silicon photo-detectors

International Nuclear Information System (INIS)

Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Brochero, J.; Calderon, A.; Fernandez, M.G.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Sobron, M.

2011-01-01

The photo-response behaviour of Amorphous Silicon Position Detectors (ASPDs) under prolonged illumination with a 681 nm diode-laser and a 633 nm He-Ne laser is presented. Both direct and inverse Staebler-Wronski effects are observed.

Au nanoparticle-decorated silicon pyramids for plasmon-enhanced hot electron near-infrared photodetection

Science.gov (United States)

Qi, Zhiyang; Zhai, Yusheng; Wen, Long; Wang, Qilong; Chen, Qin; Iqbal, Sami; Chen, Guangdian; Xu, Ji; Tu, Yan

2017-07-01

The heterojunction between metal and silicon (Si) is an attractive route to extend the response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky barrier diodes. Photons absorbed into a metallic nanostructure excite the surface plasmon resonances (SPRs), which can be damped non-radiatively through the creation of hot electrons. Unfortunately, the quantum efficiency of hot electron detectors remains low due to low optical absorption and poor electron injection efficiency. In this study, we propose an efficient and low-cost plasmonic hot electron NIR photodetector based on a Au nanoparticle (Au NP)-decorated Si pyramid Schottky junction. The large-area and lithography-free photodetector is realized by using an anisotropic chemical wet etching and rapid thermal annealing (RTA) of a thin Au film. We experimentally demonstrate that these hot electron detectors have broad photoresponsivity spectra in the NIR region of 1200-1475 nm, with a low dark current on the order of 10-5 A cm-2. The observed responsivities enable these devices to be competitive with other reported Si-based NIR hot electron photodetectors using perfectly periodic nanostructures. The improved performance is attributed to the pyramid surface which can enhance light trapping and the localized electric field, and the nano-sized Au NPs which are beneficial for the tunneling of hot electrons. The simple and large-area preparation processes make them suitable for large-scale thermophotovoltaic cell and low-cost NIR detection applications.

Spectrally resolved, broadband frequency response characterization of photodetectors using continuous-wave supercontinuum sources

Science.gov (United States)

Choudhury, Vishal; Prakash, Roopa; Nagarjun, K. P.; Supradeepa, V. R.

2018-02-01

A simple and powerful method using continuous wave supercontinuum lasers is demonstrated to perform spectrally resolved, broadband frequency response characterization of photodetectors in the NIR Band. In contrast to existing techniques, this method allows for a simple system to achieve the goal, requiring just a standard continuous wave(CW) high-power fiber laser source and an RF spectrum analyzer. From our recent work, we summarize methods to easily convert any high-power fiber laser into a CW supercontinuum. These sources in the time domain exhibit interesting properties all the way down to the femtosecond time scale. This enables measurement of broadband frequency response of photodetectors while the wide optical spectrum of the supercontinuum can be spectrally filtered to obtain this information in a spectrally resolved fashion. The method involves looking at the RF spectrum of the output of a photodetector under test when incident with the supercontinuum. By using prior knowledge of the RF spectrum of the source, the frequency response can be calculated. We utilize two techniques for calibration of the source spectrum, one using a prior measurement and the other relying on a fitted model. Here, we characterize multiple photodetectors from 150MHz bandwidth to >20GHz bandwidth at multiple bands in the NIR region. We utilize a supercontinuum source spanning over 700nm bandwidth from 1300nm to 2000nm. For spectrally resolved measurement, we utilize multiple wavelength bands such as around 1400nm and 1600nm. Interesting behavior was observed in the frequency response of the photodetectors when comparing broadband spectral excitation versus narrower band excitation.

Modeling of the photodetector based on the multilayer graphene nanoribbons

International Nuclear Information System (INIS)

Liu, Haiyue; Niu, Yanxiong; Yin, Yiheng; Liu, Shuai

2016-01-01

Graphene nanoribbon (GNR), which has unique properties and advantages, is a crucial component of nanoelectornic devices, especially in the development of photoelectric detectors. In this work, an infrared photodetector based on the structure of stacked multiple-GNRs, which is separated by a little thick barrier layers (made of tungsten disulfide or related materials) to prevent tunneling current, is proposed and modeled. Operation of photoelectric detector is related to the electron cascaded radiative transition in the adjacent GNRs strengthened by the electrons heated due to the incident light. With a developed model, the working principle is analyzed and the relationships for the photocurrent and dark current as functions of the intensity of the incident radiation are derived. The spectral dependence of the responsivity and detectivity for graphene nanoribbons photodetector (GNRs-PT) with different Fermi energy, band gaps and numbers of GNRs layers are analyzed as well. The results demonstrate that the spectral characteristics depend on the GNRs band gap, which shows a potential on GNRs-PT application in the multi-wavelength systems. In addition, GNRs-PT has a better spectrum property and higher responsivity compared to photodetectors based on In_xGa_xAs in room temperature.

Modeling of the photodetector based on the multilayer graphene nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Liu, Haiyue [Department of Instrumentation Science and Opto-electronics Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191 (China); Key Laboratory of Micro-nano Measurement-Manipulation and Physics Ministry of Education, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Niu, Yanxiong, E-mail: niuyx@buaa.edu.cn [Department of Instrumentation Science and Opto-electronics Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191 (China); Key Laboratory of Micro-nano Measurement-Manipulation and Physics Ministry of Education, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Precision Opto-mechatronics Technology Key Laboratory of Education Ministry, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Yin, Yiheng [Department of Instrumentation Science and Opto-electronics Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191 (China); Liu, Shuai [Department of Instrumentation Science and Opto-electronics Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191 (China); Precision Opto-mechatronics Technology Key Laboratory of Education Ministry, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China)

2016-07-15

Graphene nanoribbon (GNR), which has unique properties and advantages, is a crucial component of nanoelectornic devices, especially in the development of photoelectric detectors. In this work, an infrared photodetector based on the structure of stacked multiple-GNRs, which is separated by a little thick barrier layers (made of tungsten disulfide or related materials) to prevent tunneling current, is proposed and modeled. Operation of photoelectric detector is related to the electron cascaded radiative transition in the adjacent GNRs strengthened by the electrons heated due to the incident light. With a developed model, the working principle is analyzed and the relationships for the photocurrent and dark current as functions of the intensity of the incident radiation are derived. The spectral dependence of the responsivity and detectivity for graphene nanoribbons photodetector (GNRs-PT) with different Fermi energy, band gaps and numbers of GNRs layers are analyzed as well. The results demonstrate that the spectral characteristics depend on the GNRs band gap, which shows a potential on GNRs-PT application in the multi-wavelength systems. In addition, GNRs-PT has a better spectrum property and higher responsivity compared to photodetectors based on In{sub x}Ga{sub x}As in room temperature.

Study of a silicon photodetector thermal stabilization using a Peltier cell

International Nuclear Information System (INIS)

Foschi, E.; Levi, G.; Quadrani, L.; Sbarra, C.; Guandalini, C.; Zuffa, M.; Sbarra, C.

2007-01-01

In recent years a new type of silicon photon detection device (SiPM) has been developed by many groups. These devices have strong advantages in comparison to normal photomultipliers tubes (PMT) but, being made by an array of avalanche photo diodes operated in Geiger mode, are much more sensitive to temperature changes than standard PMTs. Typical SiPM gain, in fact, varies from 3 to 5 percent per Celsius degree. In space environment, where operative temperature can change from -40 deg.C to 50 deg.C, a definitive temperature stabilization is needed. In order to use SiPMs in space we have developed a thermoelectric model of a Peltier cell that allows us to simulate the final detector circuit assembly predicting the operative temperatures and the adsorbed powers. The characteristics of the model and the obtained results are shown. (authors)

A study of timing properties of Silicon Photomultipliers

Science.gov (United States)

Avella, Paola; De Santo, Antonella; Lohstroh, Annika; Sajjad, Muhammad T.; Sellin, Paul J.

2012-12-01

Silicon Photomultipliers (SiPMs) are solid-state pixelated photodetectors. Lately these sensors have been investigated for Time of Flight Positron Emission Tomography (ToF-PET) applications, where very good coincidence time resolution of the order of hundreds of picoseconds imply spatial resolution of the order of cm in the image reconstruction. The very fast rise time typical of the avalanche discharge improves the time resolution, but can be limited by the readout electronics and the technology used to construct the device. In this work the parameters of the equivalent circuit of the device that directly affect the pulse shape, namely the quenching resistance and capacitance and the diode and parasitic capacitances, were calculated. The mean rise time obtained with different preamplifiers was also measured.

Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers: High Detectivity in the Near-Infrared

Directory of Open Access Journals (Sweden)

Xiong Gong

2010-07-01

Full Text Available Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating at room temperature, exhibited calculated detectivities greater than 1013 cm Hz1/2/W over entire spectral range with linear dynamic range approximately 130 dB. The performance is comparable to or even better than Si photodetectors.

TH-C-19A-10: Systematic Evaluation of Photodetectors Performances for Plastic Scintillation Dosimetry

International Nuclear Information System (INIS)

Boivin, J; Beaulieu, L; Beddar, S; Guillemette, M

2014-01-01

Purpose: To assess and compare the performance of different photodetectors likely to be used in a plastic scintillation detector (PSD). Methods: The PSD consists of a 1 mm diameter, 10 mm long plastic scintillation fiber (BCF-60) which is optically coupled to a clear 10 m long optical fiber of the same diameter. A light-tight plastic sheath covers both fibers and the scintillator end is sealed. The clear fiber end is connected to one of the following six studied photodetectors: two polychromatic cameras (one with an optical lens and one with a fiber optic taper replacing the lens); a monochromatic camera with the same optical lens; a PIN photodiode; an avalanche photodiode (APD); and a photomultiplier tube (PMT). Each PSD is exposed to both low energy beams (120, 180, and 220 kVp) from an orthovoltage unit, and high energy beams (6 MV and 23 MV) from a linear accelerator. Various dose rates are explored to identify the photodetectors operating ranges and accuracy. Results: For all photodetectors, the relative uncertainty remains under 5 % for dose rates over 3 mGy/s. The taper camera collects four times more signal than the optical lens camera, although its standard deviation is higher since it could not be cooled. The PIN, APD and PMT have higher sensitivity, suitable for low dose rate and out-of-field dose monitoring. PMT's relative uncertainty remains under 1 % at the lowest dose rate achievable (50 μGy/s), suggesting optimal use for live dosimetry. Conclusion: A set of 6 photodetectors have been studied over a broad dose rate range at various energies. For dose rate above 3 mGy/s, the PIN diode is the most effective photodetector in term of performance/cost ratio. For lower dose rate, such as those seen in interventional radiology, PMTs are the optimal choice. FQRNT Doctoral Research Scholarship

Preparation of composite micro/nano structure on the silicon surface by reactive ion etching: Enhanced anti-reflective and hydrophobic properties

Science.gov (United States)

Zeng, Yu; Fan, Xiaoli; Chen, Jiajia; He, Siyu; Yi, Zao; Ye, Xin; Yi, Yougen

2018-05-01

A silicon substrate with micro-pyramid structure (black silicon) is prepared by wet chemical etching and then subjected to reactive ion etching (RIE) in the mixed gas condition of SF6, CHF3 and He. We systematically study the impacts of flow rates of SF6, CHF3 and He, the etching pressure and the etching time on the surface morphology and reflectivity through various characterizations. Meanwhile, we explore and obtain the optimal combination of parameters for the preparation of composite structure that match the RIE process based on the basis of micro-pyramid silicon substrate. The composite sample prepared under the optimum parameters exhibits excellent anti-reflective performance, hydrophobic, self-cleaning and anti-corrosive properties. Based on the above characteristics, the composite micro/nano structure can be applied to solar cells, photodetectors, LEDs, outdoor devices and other important fields.

Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect.

Science.gov (United States)

Qiao, Peng-Fei; Mou, Shin; Chuang, Shun Lien

2012-01-30

The electronic band structures and optical properties of type-II superlattice (T2SL) photodetectors in the mid-infrared (IR) range are investigated. We formulate a rigorous band structure model using the 8-band k · p method to include the conduction and valence band mixing. After solving the 8 × 8 Hamiltonian and deriving explicitly the new momentum matrix elements in terms of envelope functions, optical transition rates are obtained through the Fermi's golden rule under various doping and injection conditions. Optical measurements on T2SL photodetectors are compared with our model and show good agreement. Our modeling results of quantum structures connect directly to the device-level design and simulation. The predicted doping effect is readily applicable to the optimization of photodetectors. We further include interfacial (IF) layers to study the significance of their effect. Optical properties of T2SLs are expected to have a large tunable range by controlling the thickness and material composition of the IF layers. Our model provides an efficient tool for the designs of novel photodetectors.

Label-free evanescent microscopy for membrane nano-tomography in living cells.

Science.gov (United States)

Bon, Pierre; Barroca, Thomas; Lévèque-Fort, Sandrine; Fort, Emmanuel

2014-11-01

We show that through-the-objective evanescent microscopy (epi-EM) is a powerful technique to image membranes in living cells. Readily implementable on a standard inverted microscope, this technique enables full-field and real-time tracking of membrane processes without labeling and thus signal fading. In addition, we demonstrate that the membrane/interface distance can be retrieved with 10 nm precision using a multilayer Fresnel model. We apply this nano-axial tomography of living cell membranes to retrieve quantitative information on membrane invagination dynamics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Photo-Detectors Integrated with Resonant Tunneling Diodes

Directory of Open Access Journals (Sweden)

José M. L. Figueiredo

2013-07-01

Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

High performance organic ultraviolet photodetectors based on m-MTDATA

Science.gov (United States)

Zhao, Zhongli; Bai, Xiaofeng; Shang, Yubin; Yang, Jikai; Li, Baozeng; Song, De

2018-02-01

We demonstrate highly efficient organic ultraviolet photodetectors using 4,4',4'' -tris[3-methyl-pheny(phenyl) amino] triphenylamine (m-MTDATA) and aluminum Tris(8-Hydroxyquinolinate) Synonym Alq3). The optimized photodetector delivers a photocurrent of 1.40 mA/cm2 at10 V, corresponding to a response of 127 mA/W under an illumination of 375 nm UV light irradiation with an intensity of 10.5 mW/cm2 and a detectivity of 2.15×1011 cm Hz1/2 /W. The high response is attributed to the larger band offset at m-MTDATA/ Alq3 heterojunction, the suppression of radiative decay of m-MTDATA and efficient electron transfer from m-MTDATA to Alq3. The working mechanism of harvesting high performance is also discussed in detail.

III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

KAUST Repository

Detchprohm, T.

2016-11-05

The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.

Adaptive photodetectors for vibration monitoring

International Nuclear Information System (INIS)

Sokolov, I.A.

2003-01-01

We present characteristics of laser vibrometer using semiconductor GaAs and molecular SnS 2 adaptive photodetectors (AP) based on the effect of the non-steady-state photoelectromotive force. AP enable efficient direct conversion of high-frequency phase modulation of speckle-like optical wave reflected from the vibrating object into an output electrical signal with concomitant setting of optimal operation point of the interferometer and suppression of amplitude laser noise. The sensitivity of the setup is analyzed and further improvements in operation of AP are discussed

Miniature chemical sensor combining molecular recognition with evanescent wave cavity ring-down spectroscopy

International Nuclear Information System (INIS)

Pipino, Andrew C. R.

2004-01-01

A new chemical detection technology has been realized that addresses DOE environmental management needs. The new technology is based on a variant of the sensitive optical absorption technique, cavity ring-down spectroscopy (CRDS). Termed evanescent-wave cavity ring-down spectroscopy (EW-CRDS), the technology employs a miniature solid-state optical resonator having an extremely high Q-factor as the sensing element, where the high-Q is achieved by using ultra-low-attenuation optical materials, ultra-smooth surfaces, and ultra-high reflectivity coatings, as well as low-diffraction-loss designs. At least one total-internal reflection (TIR) mirror is integral to the resonator permitting the concomitant evanescent wave to probe the ambient environment. Several prototypes have been designed, fabricated, characterized, and applied to chemical detection. Moreover, extensions of the sensing concept have been explored to enhance selectivity, sensitivity, and range of application. Operating primarily in the visible and near IR regions, the technology inherently enables remote detection by optical fiber. Producing 11 archival publications, 5 patents, 19 invited talks, 4 conference proceedings, a CRADA, and a patent-license agreement, the project has realized a new chemical detection technology providing >100 times more sensitivity than comparable technologies, while also providing practical advantages

Determination of the quasi-TE mode (in-plane) graphene linear absorption coefficient via integration with silicon-on-insulator racetrack cavity resonators.

Science.gov (United States)

Crowe, Iain F; Clark, Nicholas; Hussein, Siham; Towlson, Brian; Whittaker, Eric; Milosevic, Milan M; Gardes, Frederic Y; Mashanovich, Goran Z; Halsall, Matthew P; Vijayaraghaven, Aravind

2014-07-28

We examine the near-IR light-matter interaction for graphene integrated cavity ring resonators based on silicon-on-insulator (SOI) race-track waveguides. Fitting of the cavity resonances from quasi-TE mode transmission spectra reveal the real part of the effective refractive index for graphene, n(eff) = 2.23 ± 0.02 and linear absorption coefficient, α(gTE) = 0.11 ± 0.01dBμm(-1). The evanescent nature of the guided mode coupling to graphene at resonance depends strongly on the height of the graphene above the cavity, which places limits on the cavity length for optical sensing applications.

Restoration of s-polarized evanescent waves and subwavelength imaging by a single dielectric slab

International Nuclear Information System (INIS)

El Gawhary, Omar; Schilder, Nick J; Costa Assafrao, Alberto da; Pereira, Silvania F; Paul Urbach, H

2012-01-01

It was predicted a few years ago that a medium with negative index of refraction would allow for perfect imaging. Although no material has been found so far that behaves as a perfect lens, some experiments confirmed the theoretical predictions in the near-field, or quasi-static, regime where the behaviour of a negative index medium can be mimicked by a thin layer of noble metal, such as silver. These results are normally attributed to the excitation of surface plasmons in the metal, which only leads to the restoration of p-polarized evanescent waves. In this work, we show that the restoration of s-polarized evanescent waves and, correspondingly, sub-wavelength imaging by a single dielectric slab are possible. Specifically, we show that at λ = 632 nm a thin layer of GaAs behaves as a superlens for s-polarized waves. Replacing the single-metal slab by a dielectric is not only convenient from a technical point of view, it being much easier to deposit and control the thickness and flatness of dielectric films than metal ones, but also invites us to re-think the connection between surface plasmon excitation and the theory of negative refraction. (paper)

Moisture and salt monitoring in concrete by evanescent field dielectrometry

Science.gov (United States)

Riminesi, C.; Marie-Victoire, E.; Bouichou, M.; Olmi, R.

2017-01-01

Monitoring the water content and detecting the presence of soluble salts in concrete is a key issue for its maintenance. Evanescent field dielectrometry, originally developed for the diagnostics of frescoes and mural paintings, is proposed as a tool for monitoring the decay of cement-based materials. A measuring system, based on a scalar network analyzer and a resonant probe, has been realized and tested on concrete samples taken from historical buildings in France or purposely developed in the laboratory. Measurements on water-saturated and oven-dry samples provide the basis for calibrating the instrument for on site monitoring of concrete historical buildings, sculptures and cement-based artifacts.

Graphite/ZnO nanorods junction for ultraviolet photodetectors

Czech Academy of Sciences Publication Activity Database

Yatskiv, Roman; Grym, Jan; Verde, Maria

2015-01-01

Roč. 105, March 2015 (2015), s. 70-73 ISSN 0038-1101 R&D Projects: GA MŠk(CZ) LD14111 Institutional support: RVO:67985882 Keywords : ZnO nanorods * Graphite based junction * UV photodetector Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.345, year: 2015

Optimization of the digital Silicon Photomultiplier for Cherenkov light detection

International Nuclear Information System (INIS)

Frach, T

2012-01-01

The Silicon Photomultiplier is a promising alternative to fast vacuum photodetectors. We developed a fully digital implementation of the Silicon Photomultiplier. The sensor is based on a single photon avalanche photodiode (SPAD) integrated in a standard CMOS process. Photons are detected directly by sensing the voltage at the SPAD anode using a dedicated cell electronics block next to each diode. This block also contains active quenching and recharge circuits as well as a one bit memory for the selective inhibit of detector cells. A balanced trigger network is used to propagate the trigger signal from all cells to the integrated time-to-digital converter. Photons are detected and counted as digital signals, thus making the sensor less susceptible to temperature variations and electronic noise. The integration with CMOS logic has the added benefit of low power consumption and possible integration of data post-processing in the sensor. In this paper, we discuss the sensor architecture together with its characteristics, and its possible optimizations for applications requiring the detection of Cherenkov light.

Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors.

Science.gov (United States)

Nasiri, Noushin; Bo, Renheng; Wang, Fan; Fu, Lan; Tricoli, Antonio

2015-08-05

A hierarchical nano- and microstructured morphology for visible-blind UV photo-detectors is developed, which provides record-high milliampere photocurrents, nanoampere dark currents, and excellent selectivity to ultralow UV light intensities. This is a significant step toward the integration of high-performance UV photodetectors in wearable devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cherenkov TOF PET with silicon photomultipliers

Science.gov (United States)

Dolenec, R.; Korpar, S.; Križan, P.; Pestotnik, R.

2015-12-01

As previously demonstrated, an excellent timing resolution below 100 ps FWHM is possible in time-of-flight positron emission tomography (TOF PET) if the detection method is based on the principle of detecting photons of Cherenkov light, produced in a suitable material and detected by microchannel plate photomultipliers (MCP PMTs). In this work, the silicon photomultipliers (SiPMs) were tested for the first time as the photodetectors in Cherenkov TOF PET. The high photon detection efficiency (PDE) of SiPMs led to a large improvement in detection efficiency. On the other hand, the time response of currently available SiPMs is not as good as that of MCP PMTs. The SiPM dark counts introduce a new source of random coincidences in Cherenkov method, which would be overwhelming with present SiPM technology at room temperature. When the apparatus was cooled, its performance significantly improved.

Color selective photodetector and methods of making

Science.gov (United States)

Walker, Brian J.; Dorn, August; Bulovic, Vladimir; Bawendi, Moungi G.

2013-03-19

A photoelectric device, such as a photodetector, can include a semiconductor nanowire electrostatically associated with a J-aggregate. The J-aggregate can facilitate absorption of a desired wavelength of light, and the semiconductor nanowire can facilitate charge transport. The color of light detected by the device can be chosen by selecting a J-aggregate with a corresponding peak absorption wavelength.

ZnO UV photodetector with controllable quality factor and photosensitivity

Directory of Open Access Journals (Sweden)

L. C. Campos

2013-02-01

Full Text Available ZnO nanowires have an enormous potential for applications as ultra-violet (UV photodetectors. Their mechanism of photocurrent generation is intimately related with the presence of surface states where considerable efforts, such as surface chemical modifications, have been pursued to improve their photodetection capabilities. In this work, we report a step further in this direction demonstrating that the relative photosensitivity and quality factor (Q factor of the photodetector are entirely tunable by an applied gate voltage. This mechanism enables UV photodetection selectivity ranging from wavelengths from tens of nanometers (full width at half maximum - FWHM down to a narrow detection of 3 nm. Such control paves the way for novel applications, especially related to the detection of elements that have very sharp luminescence.

HLA typing in patients with multiple evanescent white dot syndrome (MEWDS).

Science.gov (United States)

Borruat, F X; Herbort, C P; Spertini, F; Desarnaulds, A B

1998-03-01

Multiple evanescent white dot syndrome (MEWDS) is an acquired chorioretinal disorder of unknown etiology. We investigated the possibility that MEWDS might be related to a specific HLA subtyping. Blood was obtained from nine patients affected by MEWDS. HLA-B51 was found in four of these nine patients with MEWDS. There was a 3.7-fold increased frequency of HLA-B51 in patients affected by MEWDS (relative risk 5.86). MEWDS might then be related to the presence of a specific HLA subtype, HLA-B51. However, due to the small sample size, our results need to be confirmed by further testing.

Challenges of arbitrary waveform signal detection by Silicon Photomultipliers as readout for Cherenkov fibre based beam loss monitoring systems

CERN Document Server

Vinogradov, Sergey; Nebot del Busto, Eduardo; Kastriotou, Maria; Welsch, Carsten P

2016-01-01

Silicon Photomultipliers (SiPMs) are well recognised as very competitive photodetectors due to their exceptional photon number and time resolution, room-temperature low-voltage operation, insensitivity to magnetic fields, compactness, and robustness. Detection of weak light pulses of nanosecond time scale appears to be the best area for SiPM applications because in this case most of the SiPM drawbacks have a rather limited effect on its performance. In contrast to the more typical scintillation and Cherenkov detection applications, which demand information on the number of photons and/or the arrival time of the light pulse only, beam loss monitoring (BLM) systems utilising Cherenkov fibres with photodetector readout have to precisely reconstruct the temporal profile of the light pulse. This is a rather challenging task for any photon detector especially taking into account the high dynamic range of incident signals (100K – 1M) from a few photons to a few percents of destructive losses in a beam line and pre...

Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

Science.gov (United States)

Colston, Gerard; Myronov, Maksym

2017-11-01

Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure.

Science.gov (United States)

Li, H K; Chen, T P; Hu, S G; Li, X D; Liu, Y; Lee, P S; Wang, X P; Li, H Y; Lo, G Q

2015-10-19

Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (n-IGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the "optically-filtering" function of the NiO layer.

Bottom-Up Tri-gate Transistors and Submicrosecond Photodetectors from Guided CdS Nanowalls.

Science.gov (United States)

Xu, Jinyou; Oksenberg, Eitan; Popovitz-Biro, Ronit; Rechav, Katya; Joselevich, Ernesto

2017-11-08

Tri-gate transistors offer better performance than planar transistors by exerting additional gate control over a channel from two lateral sides of semiconductor nanowalls (or "fins"). Here we report the bottom-up assembly of aligned CdS nanowalls by a simultaneous combination of horizontal catalytic vapor-liquid-solid growth and vertical facet-selective noncatalytic vapor-solid growth and their parallel integration into tri-gate transistors and photodetectors at wafer scale (cm 2 ) without postgrowth transfer or alignment steps. These tri-gate transistors act as enhancement-mode transistors with an on/off current ratio on the order of 10 8 , 4 orders of magnitude higher than the best results ever reported for planar enhancement-mode CdS transistors. The response time of the photodetector is reduced to the submicrosecond level, 1 order of magnitude shorter than the best results ever reported for photodetectors made of bottom-up semiconductor nanostructures. Guided semiconductor nanowalls open new opportunities for high-performance 3D nanodevices assembled from the bottom up.

Mobility and height detection of particle labels in an optical evanescent wave biosensor with single-label resolution

Energy Technology Data Exchange (ETDEWEB)

Van Ommering, Kim; Koets, Marjo; Schleipen, Jean J H B; Prins, Menno W J [Philips Research Laboratories, 5656 AE Eindhoven (Netherlands); Somers, Philip A; Van IJzendoorn, Leo J, E-mail: menno.prins@philips.co [Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

2010-04-21

Particle labels are used in biosensors to detect the presence and concentration of analyte molecules. In this paper we demonstrate an optical technique to measure the mobility and height of bound particle labels on a biosensor surface with single-label resolution. The technique is based on the detection of the particle-induced light scattering in an optical evanescent field. We show that the thermal particle motion in the optical evanescent field leads to intensity fluctuations that can accurately be detected. The technique is demonstrated using 290 bp (99 nm) DNA as an analyte and using polystyrene particles and magnetic particles with diameters between 500 and 1000 nm as labels. The particle intensity histograms show that quantitative height measurements are obtained for particles with uniform optical properties, and the intensity versus position plots reflect the analyte-antibody orientation and the analyte flexibility. The novel optical detection technique will lead to biosensors with very high sensitivity and specificity.

III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

KAUST Repository

Detchprohm, T.; Li, Xiaohang; Shen, S.-C.; Yoder, P.D.; Dupuis, R.D.

2016-01-01

-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic

An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

Science.gov (United States)

Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

2017-09-01

Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

All-Si photodetector for telecommunication wavelength based on subwavelength grating structure and critical coupling

DEFF Research Database (Denmark)

Taghizadeh, Alireza; Rasoulzadeh Zali, Aref; Chung, Il-Sug

2017-01-01

We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered subwavelen......We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered...

Synergistic Effect of Hybrid Multilayer In2Se3 and Nanodiamonds for Highly Sensitive Photodetectors.

Science.gov (United States)

Zheng, Zhaoqiang; Yao, Jiandong; Xiao, Jun; Yang, Guowei

2016-08-10

Layered materials have rapidly established themselves as intriguing building blocks for next-generation photodetection platforms in view of their exotic electronic and optical attributes. However, both relatively low mobility and heavier electron effective mass limit layered materials for high-performance applications. Herein, we employed nanodiamonds (NDs) to promote the performance of multilayer In2Se3 photodetectors for the first time. This hybrid NDs-In2Se3 photodetector showed a tremendous promotion of photodetection performance in comparison to pristine In2Se3 ones. This hybrid devices exhibited remarkable detectivity (5.12 × 10(12) jones), fast response speed (less than 16.6 ms), and decent current on/off ratio (∼2285) simultaneously. These parameters are superior to most reported layered materials based photodetectors and even comparable to the state-of-the-art commercial photodetectors. Meanwhile, we attributed this excellent performance to the synergistic effect between NDs and the In2Se3. They can greatly enhance the broad spectrum absorption and promote the injection of photoexcited carrier in NDs to In2Se3. These results actually open up a new scenario for designing and fabricating innovative optoelectronic systems.

Solution-processed nanocrystalline PbS on paper substrate with pencil traced electrodes as visible photodetector

Science.gov (United States)

Vankhade, Dhaval; Chaudhuri, Tapas K.

2018-04-01

Paper-based PbS photodetector sensitive in the visible spectrum is reported. Nanocrystalline PbS-on-paper devices are fabricated by a spin coating method on white paper (300 GSM) from a methanolic precursor solution. Photodetector cells of gap 0.2 cm and length 0.5 cm are prepared by drawing contacts by monolithic cretacolor 8B pencil. X-ray diffractometer confirmed the deposition of nanocrystalline PbS films with 14 nm crystallites. The SEM illustrated the uniform coating of nanocrystalline PbS thin films on cellulose fibres of papers having an average thickness of fibres are 10 µm. The linear J-V characteristics in dark and under illumination of light using graphite trace on nanocrystalline PbS-on-paper shows good ohmic contact. The resistivity of pencil trace is 30 Ω.cm. Spectral response measurements of photodetector reveal the excellent sensitivity from 400 to 700 nm with a peak at 550 nm. The best responsivity anddetectivity are 0.7 A/W and 1.4 × 1012 Jones respectively. These paper-based low-cost photodetectors devices have fast photoresponse and recovery without baseline deviation.

Multiwavelength mode-locked erbium-doped fiber laser based on the interaction of graphene and fiber-taper evanescent field

International Nuclear Information System (INIS)

Luo, Z Q; Wang, J Z; Zhou, M; Xu, H Y; Cai, Z P; Ye, C C

2012-01-01

We report on the generation of multiwavelength passively mode-locked pulses in an erbium-doped fiber laser (EDFL) based on the interaction of graphene and fiber-taper evanescent field. Graphene-polymer nanocomposites in aqueous suspension are trapped by the optical evanescent light and deposited on taper region. The graphene-deposited fiber-taper device not only acts as an excellent saturable absorber for mode-locking, but also induces a polarizing effect to form an artificial birefringent filter for multiwavelength selection. By simultaneously exploiting both functions of this device, four-wavelength continuous-wave mode-locking operation of an EDFL is stably initiated with a pulse width of 8.8 ps and a fundamental repetition rate of 8.034 MHz. This is the first time, to our knowledge, the mode-locked EDFL using such a new geometry of graphene-based tapered-fiber saturable absorber has been demonstrated

Photovoltaic cells and photodetectors made with semiconductor polymers: recent progress

Science.gov (United States)

Yu, Gang; Srdanov, Gordana; Wang, Hailiang; Cao, Yong; Heeger, Alan J.

2000-05-01

In this presentation, we discuss recent progress on polymer photovoltaic cells and polymer photodetectors. By improving the fill-factor of polymer photovoltaic cells, the energy conversion efficiency was improved significantly to over 4 percent. Such high efficiency polymer photovoltaic cells are promising for many applications including e-papers, e-books and smart-windows. Polymer photodetectors with similar device configuration show high photosensitivity, low dark current, large dynamic range, linear intensity dependence, low noise level and fast response time. These parameters are comparable to or even better than their inorganic counterparts. The advantages of low manufacturing cost, large detection area, and easy hybridization and integration with other electronic or optical components make them promising for a variety of applications including chemical/biomedical analysis, full-color digital image sensing and high energy radiation detection.

An evanescent wave biosensor--Part I: Fluorescent signal acquisition from step-etched fiber optic probes.

Science.gov (United States)

Anderson, G P; Golden, J P; Ligler, F S

1994-06-01

A fiber-optic biosensor capable of remote continuous monitoring has recently been designed. To permit sensing at locations separate from the optoelectronic instrumentation, long optical fibers are utilized. An evanescent wave immuno-probe is prepared by removing the cladding near the distal end of the fiber and covalently attaching antibodies to the core. Probes with a radius unaltered from that of the original core inefficiently returned the signal produced upon binding the fluorescent-labelled antigen. To elucidate the limiting factors in signal acquisition, a series of fibers with increasingly reduced probe core radius was examined. The results were consistent with the V-number mismatch, the difference in mode carrying capacity between the clad and unclad fiber, being a critical factor in limiting signal coupling from the fiber probe. However, it was also delineated that conditions which conserve excitation power, such that power in the evanescent wave is optimized, must also be met to obtain a maximal signal. The threshold sensitivity for the optimal step-etched fiber probe was improved by over 20-fold in an immunoassay, although, it was demonstrated that signal acquisition decreased along the probe length, suggesting that a sensor region of uniform radius is not ideal.

Optical interconnects based on VCSELs and low-loss silicon photonics

Science.gov (United States)

Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian

2018-02-01

Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

Suppression of sound radiation to far field of near-field acoustic communication system using evanescent sound field

Science.gov (United States)

Fujii, Ayaka; Wakatsuki, Naoto; Mizutani, Koichi

2016-01-01

A method of suppressing sound radiation to the far field of a near-field acoustic communication system using an evanescent sound field is proposed. The amplitude of the evanescent sound field generated from an infinite vibrating plate attenuates exponentially with increasing a distance from the surface of the vibrating plate. However, a discontinuity of the sound field exists at the edge of the finite vibrating plate in practice, which broadens the wavenumber spectrum. A sound wave radiates over the evanescent sound field because of broadening of the wavenumber spectrum. Therefore, we calculated the optimum distribution of the particle velocity on the vibrating plate to reduce the broadening of the wavenumber spectrum. We focused on a window function that is utilized in the field of signal analysis for reducing the broadening of the frequency spectrum. The optimization calculation is necessary for the design of window function suitable for suppressing sound radiation and securing a spatial area for data communication. In addition, a wide frequency bandwidth is required to increase the data transmission speed. Therefore, we investigated a suitable method for calculating the sound pressure level at the far field to confirm the variation of the distribution of sound pressure level determined on the basis of the window shape and frequency. The distribution of the sound pressure level at a finite distance was in good agreement with that obtained at an infinite far field under the condition generating the evanescent sound field. Consequently, the window function was optimized by the method used to calculate the distribution of the sound pressure level at an infinite far field using the wavenumber spectrum on the vibrating plate. According to the result of comparing the distributions of the sound pressure level in the cases with and without the window function, it was confirmed that the area whose sound pressure level was reduced from the maximum level to -50 dB was

III–Vs on Si for photonic applications—A monolithic approach

International Nuclear Information System (INIS)

Wang, Zhechao; Junesand, Carl; Metaferia, Wondwosen; Hu, Chen; Wosinski, Lech; Lourdudoss, Sebastian

2012-01-01

Highlights: ► Monolithic evanescently coupled silicon laser (MECSL) structure treated. ► Optical mode profiles and thermal resistivity of MECSL optimized by simulation. ► MECSL through epitaxial lateral overgrowth (ELOG) of InP on Si exemplified. ► Passive waveguide in MECSL also acts as the defect filtering mask in ELOG. ► Growth of dislocation free thin InP layer on Si by ELOG for MECSL demonstrated. - Abstract: Epitaxial lateral overgrowth (ELOG) technology is demonstrated as a viable technology to realize monolithic integration of III-Vs on silicon. As an alternative to wafer-to-wafer bonding and die-to-wafer bonding, ELOG provides an attractive platform for fabricating discrete and integrated components in high volume at low cost. A possible route for monolithic integration of III–Vs on silicon for silicon photonics is exemplified by the case of a monolithic evanescently coupled silicon laser (MECSL) by combining InP on Si/SiO 2 through ELOG. Passive waveguide in MECSL also acts as the defect filtering mask in ELOG. The structural design of a monolithic evanescently coupled silicon laser (MECSL) and its thermal resistivity are established through simulations. Material studies to realize the above laser through ELOG are undertaken by studying appropriate ELOG pattern designs to achieve InP on narrow regions of silicon. We show that defect-free InP can be obtained on SiO 2 as the first step which paves the way for realizing active photonic devices on Si/SiO 2 waveguides, e.g. an MECSL.

Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment.

Science.gov (United States)

Jo, Seo-Hyeon; Park, Hyung-Youl; Kang, Dong-Ho; Shim, Jaewoo; Jeon, Jaeho; Choi, Seunghyuk; Kim, Minwoo; Park, Yongkook; Lee, Jaehyeong; Song, Young Jae; Lee, Sungjoo; Park, Jin-Hong

2016-08-01

The effects of triphenylphosphine and (3-aminopropyl)triethoxysilane on a rhenium diselenide (ReSe2 ) photodetector are systematically studied by comparing with conventional MoS2 devices. This study demonstrates a very high performance ReSe2 photodetector with high photoresponsivity (1.18 × 10(6) A W(-1) ), fast photoswitching speed (rising/decaying time: 58/263 ms), and broad photodetection range (possible above 1064 nm). © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nonreciprocal optical tunnelling through evanescently coupled Tamm states in magnetophotonic crystals

Energy Technology Data Exchange (ETDEWEB)

Fang, Yun-Tuan [Jiangsu Univ., Zhenjiang (China). School of Computer Science and Telecommunication Engineering; Han, Ling [The Second Military Medical Univ., Shanghai (China). Dept. of Radiation Medicine; Gao, Yong-Feng [Jiangsu Univ., Zhenjiang (China). School of Mechanical Engineering

2015-07-01

Evanescently coupled Tamm states are achieved through two magnetophotonic crystals (MPCs) with a pair of coupling prisms. At the wavelengths of coupled Tamm states, a double of nonreciprocal optical tunnelling channels is found through the transmission spectra obtained from a developed transfer matrix method. The nonreciprocal tunnelling wavelength and the interval between two nonreciprocal channels can be adjusted depending on the width of the air gap between two MPCs or the scale invariant of a PC. The nonreciprocal tunnelling is demonstrated through electromagnetic field distribution simulations based on finite element software. Such theoretical results may provide a new method to design tunable optical isolators with a double of channels.

Capacitively coupled pickup in MCP-based photodetectors using a conductive metallic anode

Energy Technology Data Exchange (ETDEWEB)

Angelico, E.; Seiss, T. [Enrico Fermi Institute, University of Chicago, 5640 S Ellis Ave, Chicago, IL 60637 (United States); Adams, B. [Incom, Inc., 294 SouthBridge Rd, Charlton, Massachusetts 01507 (United States); Elagin, A.; Frisch, H.; Spieglan, E. [Enrico Fermi Institute, University of Chicago, 5640 S Ellis Ave, Chicago, IL 60637 (United States)

2017-02-21

We have designed and tested a robust 20×20 cm{sup 2} thin metal film internal anode capacitively coupled to an external array of signal pads or micro-strips for use in fast microchannel plate photodetectors. The internal anode, in this case a 10 nm-thick NiCr film deposited on a 96% pure Al{sub 2}O{sub 3} 3 mm-thick ceramic plate and connected to HV ground, provides the return path for the electron cascade charge. The multi-channel pickup array consists of a printed-circuit card or glass plate with metal signal pickups on one side and the signal ground plane on the other. The pickup can be put in close proximity to the bottom outer surface of the sealed photodetector, with no electrical connections through the photodetector hermetic vacuum package other than a single ground connection to the internal anode. Two pickup patterns were tested using a small commercial MCP-PMT as the signal source: 1) parallel 50 Ω 25-cm-long micro-strips with an analog bandwidth of 1.5 GHz, and 2) a 20×20 cm{sup 2} array of 2-dimensional square ‘pads’ with sides of 1.27 cm or 2.54 cm. The rise-time of the fast input pulse is maintained for both pickup patterns. For the pad pattern, we observe 80% of the directly coupled amplitude. For the strip pattern we measure 34% of the directly coupled amplitude on the central strip of a broadened signal. The physical decoupling of the photodetector from the pickup pattern allows easy customization for different applications while maintaining high analog bandwidth.

Two-dimensional bismuth nanosheets as prospective photo-detector with tunable optoelectronic performance

Science.gov (United States)

Huang, Hao; Ren, Xiaohui; Li, Zhongjun; Wang, Huide; Huang, Zongyu; Qiao, Hui; Tang, Pinghua; Zhao, Jinlai; Liang, Weiyuan; Ge, Yanqi; Liu, Jie; Li, Jianqing; Qi, Xiang; Zhang, Han

2018-06-01

Two dimensional Bi nanosheets have been employed to fabricate electrodes for broadband photo-detection. A series of characterization techniques including scanning electron microscopy and high-resolution transmission electron microscopy have verified that Bi nanosheets with intact lamellar structure have been obtained after facile liquid phase exfoliation. In the meanwhile, UV–vis and Raman spectra are also carried out and the inherent optical and physical properties of Bi nanosheets are confirmed. Inherited from the topological characteristics of Bi bulk counterpart, the resultant Bi nanosheet-based photo-detector exhibits preferable photo-response activity as well as environmental robustness. We then evaluate the photo-electrochemical (PEC) performance of the photodetector in 1 M NaOH and 0.5 M Na2SO4 electrolytes, and demonstrated that the as-prepared Bi nanosheets may possess a great potential as PEC-type photo-detector. Additional PEC measurements show that the current density of Bi nanosheets can reach up to 830 nA cm‑2, while an enhanced responsivity (1.8 μA W‑1) had been achieved. We anticipate that this contribution can provide feasibility towards the construction of high-performance elemental Bi nanosheets-based optoelectronic devices in the future.

Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

International Nuclear Information System (INIS)

Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun

2015-01-01

Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells. (topical review)

Highly sensitive MoS2 photodetectors with graphene contacts

Science.gov (United States)

Han, Peize; St. Marie, Luke; Wang, Qing X.; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-01

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 1014 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS2. We study MoS2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

International Nuclear Information System (INIS)

De-Gang, Zhao; Shuang, Zhang; Wen-Bao, Liu; De-Sheng, Jiang; Jian-Jun, Zhu; Zong-Shun, Liu; Hui, Wang; Shu-Ming, Zhang; Hui, Yang; Xiao-Peng, Hao; Long, Wei

2010-01-01

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

A disposable evanescent wave fiber optic sensor coated with a molecularly imprinted polymer as a selective fluorescence probe.

Science.gov (United States)

Ton, Xuan-Anh; Acha, Victor; Bonomi, Paolo; Tse Sum Bui, Bernadette; Haupt, Karsten

2015-02-15

We have developed a disposable evanescent wave fiber optic sensor by coating a molecularly imprinted polymer (MIP) containing a fluorescent signaling group on a 4-cm long polystyrene optical waveguide. The MIP is composed of a naphthalimide-based fluorescent monomer, which shows fluorescence enhancement upon binding with carboxyl-containing molecules. The herbicide 2,4-dichlorophenoxyacetic acid and the mycotoxin citrinin were used as model analytes. The coating of the MIP was either performed ex-situ, by dip-coating the fiber with MIP particles synthesized beforehand, or in-situ by evanescent-wave photopolymerization on the fiber. The sensing element was interrogated with a fiber-coupled spectrofluorimeter. The fiber optic sensor detects targets in the low nM range and exhibits specific and selective recognition over structural analogs and non-related carboxyl-containing molecules. This technology can be extended to other carboxyl-containing analytes, and to a broader spectrum of targets using different fluorescent monomers. Copyright © 2014 Elsevier B.V. All rights reserved.

Optoelectronic Characterization of Infrared Photodetector Fabricated on Ge-on-Si Substrate.

Science.gov (United States)

Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Kim, Taek Sung; Shim, Kyu-Hwan; Hong, Hyobong; Choi, Chel-Jong

2015-10-01

We report on the optoelectronic characterization of Ge p-i-n infrared photodetector fabricated on Ge-on-Si substrate using rapid thermal chemical vapor deposition (RTCVD). The phosphorous doping concentration and the root mean square (RMS) surface roughness of epitaxial layer was estimated to be 2 x 10(18) cm(-3) and 1.2 nm, respectively. The photodetector were characterized with respect to their dark, photocurrent and responsivities in the wavelength range of 1530-1630 nm. At 1550 nm wavelength, responsivity of 0.32 A/W was measured for a reverse bias of 1 V, corresponding to 25% external quantum efficiency, without an optimal antireflection coating. Responsivity drastically reduced from 1560 nm wavelength which could be attributed to decreased absorption of Ge at room temperature.

On use of radial evanescence remain term in kinematic hardening

International Nuclear Information System (INIS)

Geyer, P.

1995-01-01

This paper presents the interest which lies in non-linear kinematic hardening rule with radial evanescence remain term as proposed for modelling multiaxial ratchetting. From analytical calculations in the case of the tension/torsion test, this ratchetting is compared with that proposed by Armstrong and Frederick. A modification is then proposed for Chaboche's elastoplastic model with two non-linear kinematic variables, by coupling the two types of hardening by means of two scalar parameters. Identification of these two parameters returns to speculate on the directions of strain in order to adjust the ratchetting to experimental observations. Using biaxial ratchetting tests on stainless steel 316 L specimens at ambient temperature, it is shown that satisfactory modelling of multiaxial ratchetting is obtained. (author). 4 refs., 5 figs

Entropy Generation in Natural Convection Under an Evanescent Magnetic Field

International Nuclear Information System (INIS)

Magherbi, Mourad; El Jery, Atef; Ben Brahim, Ammar

2009-01-01

We numerically study the effect of an externally-evanescent magnetic field on total entropy generation in conducting and non-reactive fluid enclosed in a square cavity. The horizontal walls of the enclosure are assumed to be insulated while the vertical walls are kept isothermal. A control volume finite element method is used to solve the conservation equations at Prandtl number of 0.71. The values of relaxation time of the magnetic field are chosen, so that the Lorentz force acts only in the transient state of entropy generation in natural convection. The total entropy generation was calculated for fixed value of irreversibility distribution ratio, different relaxation time varying from 0 to 1/5 and Grashof number equal to 10 5

Mixed Non-Uniform Width / Evanescent Mode Ceramic Resonator Waveguide Filter With Wide Spurious Free Bandwidth

OpenAIRE

Afridi, S; Sandhu, M; Hunter, I

2016-01-01

This paper presents a method to improve the spurious performance of integrated ceramic waveguide filters. Nonuniform width ceramic waveguide resonator and evanescent mode ceramic resonators are employed together to the resonant frequencies of higher order modes. The proposed designs give 75% improvement in stop band response when compared to uniform width ceramic waveguide filter. Simulated results of two six pole chebyshev filters are presented here with improved stop band performance.

High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios.

Science.gov (United States)

Miao, Jinshui; Hu, Weida; Guo, Nan; Lu, Zhenyu; Liu, Xingqiang; Liao, Lei; Chen, Pingping; Jiang, Tao; Wu, Shiwei; Ho, Johnny C; Wang, Lin; Chen, Xiaoshuang; Lu, Wei

2015-02-25

Graphene is a promising candidate material for high-speed and ultra-broadband photodetectors. However, graphene-based photodetectors suffer from low photoreponsivity and I(light)/I(dark) ratios due to their negligible-gap nature and small optical absorption. Here, a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector is reported, with a large photoresponsivity of 0.5 AW(-1) and I(light)/I(dark) ratio of 5 × 10(2), while the photoresponsivity and I(light)/I(dark) ratio of graphene infrared photodetectors are 0.1 mAW(-1) and 1, respectively. The Fermi level (E(F)) of graphene can be widely tuned by the gate voltage owing to its 2D nature. As a result, the back-gated bias can modulate the Schottky barrier (SB) height at the interface between graphene and InAs NWs. Simulations further demonstrate the rectification behavior of graphene/InAs NW heterojunctions and the tunable SB controls charge transport across the vertically stacked heterostructure. The results address key challenges for graphene-based infrared detectors, and are promising for the development of graphene electronic and optoelectronic applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comment on 'Local responsivity in quantum well photodetectors'

International Nuclear Information System (INIS)

Ryzhii, M.; Khmyrova, I.

2001-01-01

The response of multiple quantum well (QW) infrared photodetectors (QW) to the photoexcitation of one QW selected from many identical QWs was recently modeled [M. Ershov, J. Appl. Phys. 86, 7059 (1999)]. We point out here that the presented analysis based on the use of drift-diffusion model for a system with a few electrons is incorrect. [copyright] 2001 American Institute of Physics

4th International Conference on New Photo-Detectors

CERN Document Server

2016-01-01

The purpose of this Conference is to discuss new ideas and recent developments in photo-detectors and their applications in various fields: high energy physics, neutrino physics, particle and astroparticle physics, nuclear physics, nuclear medicine and industry. The main topics of the Conference relate to APD, SiPM, PMT, Hybrid PMT, MCP-PMT, and electronics: front-end and readout of large systems.

High performance ultraviolet photodetectors based on ZnO nanoflakes/PVK heterojunction

Energy Technology Data Exchange (ETDEWEB)

Cai, Yuhua; Xiang, Jinzhong, E-mail: jzhxiang@ynu.edu.cn [School of Physical and Astronomy, Yunnan University, Kunming 650091 (China); Tang, Libin, E-mail: scitang@163.com; Ji, Rongbin, E-mail: jirongbin@gmail.com; Zhao, Jun; Kong, Jincheng [Kunming Institute of Physics, Kunming 650223 (China); Lai, Sin Ki; Lau, Shu Ping [Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong); Zhang, Kai [Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Science, Suzhou 215123 (China)

2016-08-15

A high performance ultraviolet (UV) photodetector is receiving increasing attention due to its significant applications in fire warning, environmental monitoring, scientific research, astronomical observation, etc. The enhancement in performance of the UV photodetector has been impeded by lacking of a high-efficiency heterojunction in which UV photons can efficiently convert into charges. In this work, the high performance UV photodetectors have been realized by utilizing organic/inorganic heterojunctions based on a ZnO nanoflakes/poly (N-vinylcarbazole) hybrid. A transparent conducting polymer poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)-coated quartz substrate is employed as the anode in replacement of the commonly ITO-coated glass in order to harvest shorter UV light. The devices show a lower dark current density, with a high responsivity (R) of 7.27 × 10{sup 3 }A/W and a specific detectivity (D*) of 6.20 × 10{sup 13} cm Hz{sup 1/2}/W{sup −1} at 2 V bias voltage in ambient environment (1.30 mW/cm{sup 2} at λ = 365 nm), resulting in the enhancements in R and D* by 49% and one order of magnitude, respectively. The study sheds light on developing high-performance, large scale-array, flexible UV detectors using the solution processable method.

An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetector in standard SiGe BiCMOS technology.

Science.gov (United States)

Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob; Rücker, Holger; Choi, Woo-Young

2012-12-17

An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 2(31)-1 pseudorandom bit sequence optical data with the bit-error rate less than 10(-12) at incident optical power of -7 dBm. The OEIC core has 1000 μm x 280 μm chip area, and consumes 59 mW from 2.5-V supply. To the best of our knowledge, this OEIC receiver achieves the highest data rate with the smallest sensitivity as well as the best power efficiency among integrated OEIC receivers fabricated with standard Si technology.

Sol-gel based mid-infrared evanescent wave sensors for detection of organophosphate pesticides in aqueous solution

Energy Technology Data Exchange (ETDEWEB)

Janotta, Markus; Karlowatz, Manfred; Vogt, Frank; Mizaikoff, Boris

2003-10-31

This work demonstrates the application of organically modified sol-gels as recognition layers combined with mid-infrared evanescent wave sensors for in situ detection of nitrated organics in aqueous media. Sol-gels were prepared by acid-catalyzed copolymerization of phenyltrimethoxysilane (PTMOS) and tetramethoxysilane (TMOS) and were spin-coated onto ZnSe attenuated total reflection (ATR) waveguides. These sensors were investigated with respect to their enrichment properties of selected organophosphates, i.e. parathion, fenitrothion and paraoxon, respectively, and their capability of suppressing interfering water background absorptions. Figures of merit are derived from calibration curves determined to assess sensitivity and reproducibility of the applied sensor system. It can be concluded that sol-gel coated infrared optical sensors enable reproducible detection of organophosphates down to the sub-ppm concentration range. Furthermore, measurement of spiked river water samples demonstrates feasibility as remote field sensor system. Once the required sensitivity is achieved, sol-gel based mid-infrared evanescent wave sensors have the potential of being an alternative to commonly applied biosensors for detection of organophosphates in environmental analysis, since they provide superior mechanical and chemical stability during application relevant periods of time.

First results in the application of silicon photomultiplier matrices to small animal PET

Energy Technology Data Exchange (ETDEWEB)

Llosa, G. [University of Pisa, Department of Physics, Pisa (Italy)], E-mail: gabriela.llosa@pi.infn.it; Belcari, N.; Bisogni, M.G. [University of Pisa, Department of Physics, Pisa (Italy); INFN Pisa (Italy); Collazuol, G. [University of Pisa, Department of Physics, Pisa (Italy); Scuola Normale Superiore, Pisa (Italy); Marcatili, S. [University of Pisa, Department of Physics, Pisa (Italy); INFN Pisa (Italy); Boscardin, M.; Melchiorri, M.; Tarolli, A.; Piemonte, C.; Zorzi, N. [FBK irst, Trento (Italy); Barrillon, P.; Bondil-Blin, S.; Chaumat, V.; La Taille, C. de; Dinu, N.; Puill, V.; Vagnucci, J-F. [Laboratoire de l' Accelerateur Lineaire, IN2P3-CNRS, Orsay (France); Del Guerra, A. [University of Pisa, Department of Physics, Pisa (Italy); INFN Pisa (Italy)

2009-10-21

A very high resolution small animal PET scanner that employs matrices of silicon photomultipliers as photodetectors is under development at the University of Pisa and INFN Pisa. The first SiPM matrices composed of 16 (4x4)1mmx1mm pixel elements on a common substrate have been produced at FBK-irst, and are being evaluated for this application. The MAROC2 ASIC developed at LAL-Orsay has been employed for the readout of the SiPM matrices. The devices have been tested with pixelated and continuous LYSO crystals. The results show the good performance of the matrices and lead to the fabrication of matrices with 64 SiPM elements.

First results in the application of silicon photomultiplier matrices to small animal PET

International Nuclear Information System (INIS)

Llosa, G.; Belcari, N.; Bisogni, M.G.; Collazuol, G.; Marcatili, S.; Boscardin, M.; Melchiorri, M.; Tarolli, A.; Piemonte, C.; Zorzi, N.; Barrillon, P.; Bondil-Blin, S.; Chaumat, V.; La Taille, C. de; Dinu, N.; Puill, V.; Vagnucci, J-F.; Del Guerra, A.

2009-01-01

A very high resolution small animal PET scanner that employs matrices of silicon photomultipliers as photodetectors is under development at the University of Pisa and INFN Pisa. The first SiPM matrices composed of 16 (4x4)1mmx1mm pixel elements on a common substrate have been produced at FBK-irst, and are being evaluated for this application. The MAROC2 ASIC developed at LAL-Orsay has been employed for the readout of the SiPM matrices. The devices have been tested with pixelated and continuous LYSO crystals. The results show the good performance of the matrices and lead to the fabrication of matrices with 64 SiPM elements.

Modeling crosstalk in silicon photomultipliers

International Nuclear Information System (INIS)

Gallego, L; Rosado, J; Blanco, F; Arqueros, F

2013-01-01

Optical crosstalk seriously limits the photon-counting resolution of silicon photomultipliers. In this work, realistic analytical models to describe the crosstalk effects on the response of these photodetectors are presented and compared with experimental data. The proposed models are based on the hypothesis that each pixel of the array has a finite number of available neighboring pixels to excite via crosstalk. Dead-time effects and geometrical aspects of the propagation of crosstalk between neighbors are taken into account in the models for different neighborhood configurations. Simple expressions to account for crosstalk effects on the pulse-height spectrum as well as to evaluate the excess noise factor due to crosstalk are also given. Dedicated measurements were carried out under both dark-count conditions and pulsed illumination. Moreover, the influence of afterpulsing on the measured pulse-height spectrum was studied, and a measurement of the recovery time of pixels was reported. High-resolution pulse-height spectra were obtained by means of a detailed waveform analysis, and the results have been used to validate our crosstalk models.

Highly sensitive PMOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane

Science.gov (United States)

Chen, Yung Ting; Chen, Yang Fang

2010-03-01

A new approach for developing highly sensitive PMOS photodetector based on the assistance of AAO membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the PMOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Notably, the response at the optical communication wavelength of 850 nm can reach up to 0.24 A/W with an external quantum efficiency of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5 V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.

Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction.

Science.gov (United States)

Guo, Daoyou; Liu, Han; Li, Peigang; Wu, Zhenping; Wang, Shunli; Cui, Can; Li, Chaorong; Tang, Weihua

2017-01-18

A solar-blind photodetector based on β-Ga 2 O 3 /NSTO (NSTO = Nb:SrTiO 3 ) heterojunctions were fabricated for the first time, and its photoelectric properties were investigated. The device presents a typical positive rectification in the dark, while under 254 nm UV light illumination, it shows a negative rectification, which might be caused by the generation of photoinduced electron-hole pairs in the β-Ga 2 O 3 film layer. With zero bias, that is, zero power consumption, the photodetector shows a fast photoresponse time (decay time τ d = 0.07 s) and the ratio I photo /I dark ≈ 20 under 254 nm light illumination with a light intensity of 45 μW/cm 2 . Such behaviors are attributed to the separation of photogenerated electron-hole pairs driven by the built-in electric field in the depletion region of β-Ga 2 O 3 and the NSTO interface, and the subsequent transport toward corresponding electrodes. The photocurrent increases linearly with increasing the light intensity and applied bias, while the response time decreases with the increase of the light intensity. Under -10 V bias and 45 μW/cm 2 of 254 nm light illumination, the photodetector exhibits a responsivity R λ of 43.31 A/W and an external quantum efficiency of 2.1 × 10 4 %. The photo-to-electric conversion mechanism in the β-Ga 2 O 3 /NSTO heterojunction photodetector is explained in detail by energy band diagrams. The results strongly suggest that a photodetector based on β-Ga 2 O 3 thin-film heterojunction structure can be practically used to detect weak solar-blind signals because of its high photoconductive gain.

Donor and Acceptor Polymers for Bulk Hetero Junction Solar Cell and Photodetector Applications

KAUST Repository

Cruciani, Federico

2018-04-01

Bulk heterojunction (BHJ) devices represent a very versatile family of organic cells for both the fields of solar energy conversion and photodetection. Organic photovoltaics (OPV) are an attractive alternative to their silicon-based counterparts because of their potential for low-cost roll-to-roll printing, and their intended application in light-weight mechanically conformable devices and in window-type semi-transparent PV modules. Of all proposed OPV candidates, polymer donor with different absorption range are especially promising when used in conjunction with complementary absorbing acceptor materials, like fullerene derivatives (PCBM), conjugated molecules or polymers, achieving nowadays power conversion efficiencies (PCEs) in the range of 10-13% and being a step closer to practical applications. Among the photodetectors (PD), low band gap polymer blended with PCBM decked out the attention, given their extraordinary range of detection from UV to IR and high detectivity values reached so far, compared to the inorganic devices. Since the research has been focused on the enhancement of those numbers for an effective commercialization of organic cells, the topic of the following thesis has been centered on the synthesis of different polymer structures with diverse absorption ranges, used as donor or acceptor, with emphasis on performance in various BHJ devices either for solar cells and photodetectors. In the first part, two new wide band gap polymers, used as donor material in BHJ devices blended with fullerene and small molecule acceptors, are presented. The PBDT_2FT and PBDTT_2FT have shown nice efficiencies from 7% to 9.8%. The device results are implemented with a morphology study and a specific application in a semi-transparent tandem device, reaching a record PCE of 5.4% for average level of transparency of 48%. In another section two new low band gap polymers (Eopt~ 1.26 eV) named DTP_2FBT and (Eopt~ 1.1 eV) named BDTT_BTQ are presented. While the DTP

III-Vs on Si for photonic applications-A monolithic approach

Energy Technology Data Exchange (ETDEWEB)

Wang, Zhechao, E-mail: Zhechao.Wang@intec.ugent.be [School of ICT, Royal Institute of Technology, Electrum 229, Isafjordsgatan 22, 164 40 Kista (Sweden); Junesand, Carl; Metaferia, Wondwosen; Hu, Chen; Wosinski, Lech [School of ICT, Royal Institute of Technology, Electrum 229, Isafjordsgatan 22, 164 40 Kista (Sweden); Lourdudoss, Sebastian, E-mail: slo@kth.se [School of ICT, Royal Institute of Technology, Electrum 229, Isafjordsgatan 22, 164 40 Kista (Sweden)

2012-10-01

Highlights: Black-Right-Pointing-Pointer Monolithic evanescently coupled silicon laser (MECSL) structure treated. Black-Right-Pointing-Pointer Optical mode profiles and thermal resistivity of MECSL optimized by simulation. Black-Right-Pointing-Pointer MECSL through epitaxial lateral overgrowth (ELOG) of InP on Si exemplified. Black-Right-Pointing-Pointer Passive waveguide in MECSL also acts as the defect filtering mask in ELOG. Black-Right-Pointing-Pointer Growth of dislocation free thin InP layer on Si by ELOG for MECSL demonstrated. - Abstract: Epitaxial lateral overgrowth (ELOG) technology is demonstrated as a viable technology to realize monolithic integration of III-Vs on silicon. As an alternative to wafer-to-wafer bonding and die-to-wafer bonding, ELOG provides an attractive platform for fabricating discrete and integrated components in high volume at low cost. A possible route for monolithic integration of III-Vs on silicon for silicon photonics is exemplified by the case of a monolithic evanescently coupled silicon laser (MECSL) by combining InP on Si/SiO{sub 2} through ELOG. Passive waveguide in MECSL also acts as the defect filtering mask in ELOG. The structural design of a monolithic evanescently coupled silicon laser (MECSL) and its thermal resistivity are established through simulations. Material studies to realize the above laser through ELOG are undertaken by studying appropriate ELOG pattern designs to achieve InP on narrow regions of silicon. We show that defect-free InP can be obtained on SiO{sub 2} as the first step which paves the way for realizing active photonic devices on Si/SiO{sub 2} waveguides, e.g. an MECSL.

Thin film organic photodetectors for indirect X-ray detection demonstrating low dose rate sensitivity at low voltage operation

Energy Technology Data Exchange (ETDEWEB)

Starkenburg, Daken J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA; Johns, Paul M. [Nuclear Engineering Program, University of Florida, Gainesville, Florida 32611, USA; Detection Systems Group, Pacific Northwest National Laboratory, Richland, Washington 99354, USA; Baciak, James E. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA; Nuclear Engineering Program, University of Florida, Gainesville, Florida 32611, USA; Nino, Juan C. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA; Xue, Jiangeng [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

2017-12-14

Developments in the field of organic semiconductors have generated organic photodetectors with high quantum efficiency, wide spectral sensitivity, low power consumption, and unique form factors that are flexible and conformable to their substrate shape. In this work, organic photodetectors coupled with inorganic CsI(Tl) scintillators are used to showcase the low dose rate sensitivity that is enabled when high performance organic photodetectors and scintillator crystals are integrated. The detection capability of these organic-inorganic coupled systems to high energy radiation highlights their potential as an alternative to traditional photomultiplier tubes for nuclear spectroscopy applications. When exposed to Bremsstrahlung radiation produced from an X-ray generator, SubPc:C60, AlPcCl:C70, and P3HT:PC61BM thin film photodetectors with active layer thicknesses less than 100 nm show detection of incident radiation at low and no applied bias. Remarkably low dose rates, down to at least 0.28 µGy/s, were detectable with a characteristic linear relationship between exposure rate and photodetector current output. These devices also demonstrate sensitivities as high as 5.37 mC Gy-1 cm-2 when coupled to CsI(Tl). Additionally, as the tube voltage across the X-ray generator was varied, these organic-inorganic systems showed their ability to detect a range of continuous radiation spectra spanning several hundred keV.

Thin film organic photodetectors for indirect X-ray detection demonstrating low dose rate sensitivity at low voltage operation

Science.gov (United States)

Starkenburg, Daken J.; Johns, Paul M.; Baciak, James E.; Nino, Juan C.; Xue, Jiangeng

2017-12-01

Developments in the field of organic semiconductors have generated organic photodetectors with high quantum efficiency, wide spectral sensitivity, low power consumption, and unique form factors that are flexible and conformable to their substrate shape. In this work, organic photodetectors coupled with inorganic CsI(Tl) scintillators are used to showcase the low dose rate sensitivity that is enabled when high performance organic photodetectors and scintillator crystals are integrated. The detection capability of these organic-inorganic coupled systems to high energy radiation highlights their potential as an alternative to traditional photomultiplier tubes for nuclear spectroscopy applications. When exposed to Bremsstrahlung radiation produced from an X-ray generator, SubPc:C60, AlPcCl:C70, and P3HT:PC61BM thin film photodetectors with active layer thicknesses less than 100 nm show detection of incident radiation at low and no applied bias. Remarkably low dose rates, down to at least 0.18 μGy/s, were detectable with a characteristic linear relationship between exposure rate and photodetector current output. These devices also demonstrate sensitivities as high as 5.37 mC Gy-1 cm-2 when coupled to CsI(Tl). Additionally, as the tube voltage across the X-ray generator was varied, these organic-inorganic systems showed their ability to detect a range of continuous radiation spectra spanning several hundred keV.

An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

Science.gov (United States)

Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei; Zhai, Tianyou

2017-03-01

ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

Ultrasensitive solution-cast quantum dot photodetectors

International Nuclear Information System (INIS)

Konstantatos, G.; Howard, I.; Fischer, A.; Hoogland, S.; Clifford, J.; Klem, E.; Levina, L.; Sargent, E.H.

2007-01-01

Solution-processed electronic and optoelectronic devices offer low cost, large device area, physical flexibility and convenient materials integration compared to conventional epitaxially grown, lattice-matched, crystalline semiconductor devices. Although the electronic or optoelectronic performance of these solution-processed devices is typically inferior to that of those fabricated by conventional routes, this can be tolerated for some applications in view of the other benefits. Here we report the fabrication of solution-processed infrared photodetectors that are superior in their normalized detectivity (D * , the figure of merit for detector sensitivity) to the best epitaxially grown devices operating at room temperature. We produced the devices in a single solution-processing step, overcoating a prefabricated planar electrode array with an unpatterned layer of Pbs colloidal quantum dot nanocrystals. The devices showed large photoconductive gains with responsivities greater than 10 3 AW -1 . The best devices exhibited a normalized detectivity D * of 1.8 x 10 13 jones (1 jones= 1 cm Hz 1/2 W -1 ) at 1.3μm at room temperature: today's highest performance infrared photodetectors are photovoltaic devices made from epitaxially grown InGaAs that exhibit peak D * in the 10 12 ) jones range at room temperature, whereas the previous record for D * from a photoconductive detector lies at 10 11 jones. The tailored selection of absorption onset energy through the quantum size effect, combined with deliberate engineering of the sequence of nanoparticle fusing and surface trap functionalization, underlie the superior performance achieved in this readily fabricated family of devices. (author)

Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate

Science.gov (United States)

Seo, Sang-Ho; Kim, Kyoung-Do; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2007-02-01

In this paper, a new CMOS image sensor is presented, which uses a PMOSFET-type photodetector with a transfer gate that has a high and variable sensitivity. The proposed CMOS image sensor has been fabricated using a 0.35 μm 2-poly 4- metal standard CMOS technology and is composed of a 256 × 256 array of 7.05 × 7.10 μm pixels. The unit pixel has a configuration of a pseudo 3-transistor active pixel sensor (APS) with the PMOSFET-type photodetector with a transfer gate, which has a function of conventional 4-transistor APS. The generated photocurrent is controlled by the transfer gate of the PMOSFET-type photodetector. The maximum responsivity of the photodetector is larger than 1.0 × 10 3 A/W without any optical lens. Fabricated 256 × 256 CMOS image sensor exhibits a good response to low-level illumination as low as 5 lux.

Phase-Engineered Type-II Multimetal-Selenide Heterostructures toward Low-Power Consumption, Flexible, Transparent, and Wide-Spectrum Photoresponse Photodetectors.

Science.gov (United States)

Chen, Yu-Ze; Wang, Sheng-Wen; Su, Teng-Yu; Lee, Shao-Hsin; Chen, Chia-Wei; Yang, Chen-Hua; Wang, Kuangye; Kuo, Hao-Chung; Chueh, Yu-Lun

2018-05-01

Phase-engineered type-II metal-selenide heterostructures are demonstrated by directly selenizing indium-tin oxide to form multimetal selenides in a single step. The utilization of a plasma system to assist the selenization facilitates a low-temperature process, which results in large-area films with high uniformity. Compared to single-metal-selenide-based photodetectors, the multimetal-selenide photodetectors exhibit obviously improved performance, which can be attributed to the Schottky contact at the interface for tuning the carrier transport, as well as the type-II heterostructure that is beneficial for the separation of the electron-hole pairs. The multimetal-selenide photodetectors exhibit a response to light over a broad spectrum from UV to visible light with a high responsivity of 0.8 A W -1 and an on/off current ratio of up to 10 2 . Interestingly, all-transparent photodetectors are successfully produced in this work. Moreover, the possibility of fabricating devices on flexible substrates is also demonstrated with sustainable performance, high strain tolerance, and high durability during bending tests. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A high-sensitive ultraviolet photodetector composed of double-layered TiO{sub 2} nanostructure and Au nanoparticles film based on Schottky junction

Energy Technology Data Exchange (ETDEWEB)

Wang, Huan; Qin, Pei [School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, 510006 (China); Yi, Guobin, E-mail: ygb702@163.com [School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, 510006 (China); Zu, Xihong [School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, 510006 (China); Zhang, Li, E-mail: zhangli2368@126.com [School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006 (China); Hong, Wei; Chen, Xudong [School of Chemistry and Chemical Engineering, Sun Yat-Sen (Zhongshan) University, Guangzhou, 510275 (China)

2017-06-15

In this study, a Schottky-type ultraviolet (UV) photodetector based on double-layered nanostructured TiO{sub 2}/Au films was fabricated. Double-layered titanium dioxide (TiO{sub 2}) nanostructures composed of one layer of TiO{sub 2} nano-flowers on one layer of TiO{sub 2} nanorods on fluorine-doped tin oxide (FTO) pre-coated glass substrates were synthesized via a convenient hydrothermal method using titanium butoxide and hydrochloric acid as the starting precursor, without involving the use of any other surfactants and catalysts. A granular-shaped thin-layer of Au film using vacuum sputter coating technique was subsequently deposited on TiO{sub 2} for the formation of Schottky-type photodetector. The as-fabricated Schottky device showed various photocurrent responses when irradiated with different wavelength of UV light. This suggests that the newly-developed photodetectors have promising potential for identifying different UV light wavelengths. - Highlights: • A novel double-layered TiO{sub 2} nanostructure was synthesized by a simple method. • An UV photodetector composed of TiO{sub 2} and Au was designed and fabricated. • The preparation method of TiO{sub 2}/Au UV photodetector was simple and convenient. • The UV photodetector based on TiO{sub 2}/Au showed excellent sensitivity to UV light.

Quantitative measurement of piezoelectric coefficient of thin film using a scanning evanescent microwave microscope.

Science.gov (United States)

Zhao, Zhenli; Luo, Zhenlin; Liu, Chihui; Wu, Wenbin; Gao, Chen; Lu, Yalin

2008-06-01

This article describes a new approach to quantitatively measure the piezoelectric coefficients of thin films at the microscopic level using a scanning evanescent microwave microscope. This technique can resolve 10 pm deformation caused by the piezoelectric effect and has the advantages of high scanning speed, large scanning area, submicron spatial resolution, and a simultaneous accessibility to many other related properties. Results from the test measurements on the longitudinal piezoelectric coefficient of PZT thin film agree well with those from other techniques listed in literatures.

Silicon Nitride Background in Nanophotonic Waveguide Enhanced Raman Spectroscopy

Directory of Open Access Journals (Sweden)

Ashim Dhakal

2017-02-01

Full Text Available Recent studies have shown that evanescent Raman spectroscopy using a silicon nitride (SiN nanophotonic waveguide platform has higher signal enhancement when compared to free-space systems. However, signal-to-noise ratio from the waveguide at a low analyte concentration is constrained by the shot-noise from the background light originating from the waveguide itself. Hence, understanding the origin and properties of this waveguide background luminescence (WGBL is essential to developing mitigation strategies. Here, we identify the dominating component of the WGBL spectrum composed of a broad Raman scattering due to momentum selection-rule breaking in amorphous materials, and several peaks specific to molecules embedded in the core. We determine the maximum of the Raman scattering efficiency of the WGBL at room temperature for 785 nm excitation to be 4.5 ± 1 × 10−9 cm−1·sr−1, at a Stokes shift of 200 cm−1. This efficiency decreases monotonically for higher Stokes shifts. Additionally, we also demonstrate the use of slotted waveguides and quasi-transverse magnetic polarization as some mitigation strategies.

Miniature Chemical Sensor Combining Molecular Recognition with Evanescent Wave Cavity Ring-Down Spectroscopy

International Nuclear Information System (INIS)

Pipino, Andrew C. R.; Meuse, Curtis W.

2002-01-01

To address the chemical sensing needs of DOE, a new class of chemical sensors is being developed that enables qualitative and quantitative, remote, real-time, optical diagnostics of chemical species in hazardous gas, liquid, and semi-solid phases by employing evanescent wave cavity ringdown spectroscopy (EW-CRDS). The sensitivity of EW-CRDS was demonstrated previously under Project No.60231. The objective of this project is to enhance the range of application and selectivity of the technique by combining EW-CRDS with refractive-index-sensitive nanoparticle optics, molecular recognition (MR) chemistry, and by utilizing the polarization-dependence of EW-CRDS. Research Progress and Implications

Evanescent-wave coupled right angled buried waveguide: Applications in carbon nanotube mode-locking

International Nuclear Information System (INIS)

Mary, R.; Thomson, R. R.; Kar, A. K.; Brown, G.; Beecher, S. J.; Popa, D.; Sun, Z.; Torrisi, F.; Hasan, T.; Milana, S.; Bonaccorso, F.; Ferrari, A. C.

2013-01-01

We present an evanescent-field device based on a right-angled waveguide. This consists of orthogonal waveguides, with their points of intersection lying along an angled facet of the chip. Light guided along one waveguide is incident at the angled dielectric-air facet at an angle exceeding the critical angle, so that the totally internally reflected light is coupled into the second waveguide. By depositing a nanotube film on the angled surface, the chip is then used to mode-lock an Erbium doped fiber ring laser with a repetition rate of 26 MHz, and pulse duration of 800 fs

Influence of evanescent waves on the voxel profile in multipulse multiphoton polymerization nanofabrication

International Nuclear Information System (INIS)

Li Wei; Cao Tianxiang; Zhai Zhaohui; Yu Xuanyi; Zhang Xinzheng; Xu Jingjun

2013-01-01

The relationship between the profile of the structures obtained by multiphoton polymerization and the optical parameters of nanofabrication systems has been studied theoretically for a multipulse scheme. We find that the profile of sub-wavelength structures is greatly affected by the evanescent waves affect. Not only is the photocured polymer voxel affected by the beam profile, but the beam propagation behavior is influenced by the photocured polymer voxel. This gives us a new view of matter–light interactions in multipulse polymerization process, which is useful to the accurate control of the nanofabrication profile and the selection of new nanofabrication materials. (paper)

MIS photodetectors on intrinsic semiconductors for thermal infrared imagery - A design aid for focal plane matrices

Science.gov (United States)

Farre, J.

1980-12-01

The physical mechanisms determining the operational behavior of an MIS photodetector for thermal infrared imagery based on a two-dimensional matrix of intrinsic semiconductors constituting a charge injection device are examined. The general principles of a thermal infrared imagery system composed of radiation source, atmosphere, sensor system with entrance optics, detector and environment, and data processing means are introduced, and the parameters of the system as a whole influencing detector characteristics are indicated. The properties of an ideal and a real MIS photodetector are discussed, with attention given to the physical properties of narrow bandgap materials such as InSb, operational properties in the dynamic regime, the carrier tunneling component and experimentally observed instability phenomena. The matrix organization of MIS photodetectors is then considered, with particular attention given to a simple model of charge transfer between two electrodes and the two principal reading mechanisms: charge injection and the floating potential method.

Bloch Modes and Evanescent Modes of Photonic Crystals: Weak Form Solutions Based on Accurate Interface Triangulation

Directory of Open Access Journals (Sweden)

Matthias Saba

2015-01-01

Full Text Available We propose a new approach to calculate the complex photonic band structure, both purely dispersive and evanescent Bloch modes of a finite range, of arbitrary three-dimensional photonic crystals. Our method, based on a well-established plane wave expansion and the weak form solution of Maxwell’s equations, computes the Fourier components of periodic structures composed of distinct homogeneous material domains from a triangulated mesh representation of the inter-material interfaces; this allows substantially more accurate representations of the geometry of complex photonic crystals than the conventional representation by a cubic voxel grid. Our method works for general two-phase composite materials, consisting of bi-anisotropic materials with tensor-valued dielectric and magnetic permittivities ε and μ and coupling matrices ς. We demonstrate for the Bragg mirror and a simple cubic crystal closely related to the Kelvin foam that relatively small numbers of Fourier components are sufficient to yield good convergence of the eigenvalues, making this method viable, despite its computational complexity. As an application, we use the single gyroid crystal to demonstrate that the consideration of both conventional and evanescent Bloch modes is necessary to predict the key features of the reflectance spectrum by analysis of the band structure, in particular for light incident along the cubic [111] direction.

[A case of MEWDS. "The multiple evanescent white-dot syndrome"].

Science.gov (United States)

Lefrançois, A; Hamard, H; Corbe, C; Schmitt, A; Badelon, I; Vidal, A

1989-01-01

A young white man developed acute bilateral visual loss with no previous general illness. Ophthalmoscopic examination showed multiple small yellow-white lesions scattered throughout the posterior poles and mild periphery fundus. There was also fine granularity of two foveal areas and one optic disc margin was blurred. Fluorescein angiography showed early hyperfluorescence of the lesions and late staining of the retinal pigment epithelium. Electrophysiologic abnormalities were transient, asymmetric, more marked in photopic than in scotopic. The origin could be in retinal bipolar cells. These lesions regressed, with return of normal visual function within several weeks. These clinical findings are different from others acute inflammatory diseases primarily involving retinal pigment epithelium and photoreceptors. This aspect is usually described as "multiple evanescent white dot syndrome". The etiology of this syndrome remains unknown with no evidence of systemic disease. A history of flulike illness is rare.

[Indocyanine green angiography in "multiple evanescent white dot syndrome" (MEWDS)].

Science.gov (United States)

Desarnaulds, A B; Borruat, F X; Herbort, C P; de Courten, C

1998-05-01

Multiple evanescent white dot syndrome (MEWDS) is a benign acquired chorioretinal disorder occurring mostly in young adults. Its pathophysiology is unknown. To describe the results of indocyanine green angiography (ICGA) in MEWDS. Four patients with MEWDS were investigated by ICGA. In all cases, ICGA revealed numerous choroidal hypofluorescent lesions that largely outnumbered the lesions visible with either fundoscopy or fluorescein angiography. Three cases showed a blind spot enlargement on perimetry associated with the presence of a large peripapillary hypofluorescent zone on ICGA. Three cases showed macular granularity on fundoscopy correlating with a significant subfoveal hypfluorescent lesion on ICGA. Evolution was always favorable with disappearance of the hypofluorescent choroidal lesions. Our results confirm that MEWDS is primarily a choroidal disorder. The blind spot enlargement and the macular granularity, frequently detected in MEWDS, result from larger peripapillary and subfoveal choroidal lesions.

Robust and Air-Stable Sandwiched Organo-Lead Halide Perovskites for Photodetector Applications

KAUST Repository

Mohammed, Omar F.; Banavoth, Murali; Saidaminov, Makhsud I.; Abdelhady, Ahmed L.; Pan, Jun; Liu, Jiakai; Peng, Wei; Bakr, Osman

2016-01-01

We report the simplest possible method to date for fabricating robust, air-stable, sandwiched perovskite photodetectors. Our proposed sandwiched structure is devoid of electron or hole transporting layers and also the expensive electrodes

Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors.

Science.gov (United States)

Karimi, Mohammad; Jain, Vishal; Heurlin, Magnus; Nowzari, Ali; Hussain, Laiq; Lindgren, David; Stehr, Jan Eric; Buyanova, Irina A; Gustafsson, Anders; Samuelson, Lars; Borgström, Magnus T; Pettersson, Håkan

2017-06-14

The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n + -i-n + InP nanowires periodically ordered in arrays. The nanowires were grown by metal-organic vapor phase epitaxy on InP substrates, with either a single or 20 InAsP quantum discs embedded in the i-segment. By Zn compensation of the residual n-dopants in the i-segment, the room-temperature dark current is strongly suppressed to a level of pA/NW at 1 V bias. The low dark current is manifested in the spectrally resolved photocurrent measurements, which reveal strong photocurrent contributions from the InAsP quantum discs at room temperature with a threshold wavelength of about 2.0 μm and a bias-tunable responsivity reaching 7 A/W@1.38 μm at 2 V bias. Two different processing schemes were implemented to study the effects of radial self-gating in the nanowires induced by the nanowire/SiO x /ITO wrap-gate geometry. Summarized, our results show that properly designed axial InP/InAsP nanowire heterostructures are promising candidates for broadband photodetectors.

State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

Directory of Open Access Journals (Sweden)

Eng Png Ching

2015-01-01

Full Text Available Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert light into electricity. Over the past decades, high-performance photodetectors (PDs have been aggressively pursued to enable high-speed, large-bandwidth, and low-noise communication applications. Various material systems have been explored and different structures designed to improve photodetection capability as well as compatibility with CMOS circuits. In this paper, we review state-of-theart photodetection technologies in the telecommunications spectrum based on different material systems, including traditional semiconductors such as InGaAs, Si, Ge and HgCdTe, as well as recently developed systems such as low-dimensional materials (e.g. graphene, carbon nanotube, etc. and noble metal plasmons. The corresponding material properties, fundamental mechanisms, fabrication, theoretical modelling and performance of the typical PDs are presented, including the emerging directions and perspectives of the PDs for optoelectronic integration applications are discussed.

Interfacial Electronic Structures of Photodetectors Based on C8BTBT/Perovskite.

Science.gov (United States)

Li, Lin; Tong, Sichao; Zhao, Yuan; Wang, Can; Wang, Shitan; Lyu, Lu; Huang, Yingbao; Huang, Han; Yang, Junliang; Niu, Dongmei; Liu, Xiaoliang; Gao, Yongli

2018-06-07

Comprehensive measurements of ultraviolet photoemission spectroscopy, X-ray photoemission spectroscopy, X-ray diffraction, and atomic force microscopy are adopted to investigate the corelevance of energy level alignment, molecular orientation, and film growth of Au/C8BTBT/perovskite interfaces. A small energy offset of valence band maximum of 0.06 eV between perovskite and C8BTBT makes hole transportation feasible. About 0.65 eV upward shift of energy levels is observed with the deposition of the Au film on C8BTBT, which enhances hole transportation to the Au electrode. The observations from the interface analysis are supported by a prototype photodetector of Au (80 nm)/C8BTBT (20 nm)/perovskite (100 nm) that exhibits excellent performances whose responsivity can reach up to 2.65 A W -1 , 4 times higher than the best CH 3 NH 3 PbI 3 photodetectors.

Nanophotonic integrated circuits from nanoresonators grown on silicon.

Science.gov (United States)

Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D; Li, Kun; Chang-Hasnain, Connie

2014-07-07

Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

Nano-structured Cu(In,Al)Se{sub 2} near-infrared photodetectors

Energy Technology Data Exchange (ETDEWEB)

Chang, Ruo-Ping [Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Perng, Dung-Ching, E-mail: dcperng@ee.ncku.edu.tw [Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

2013-02-01

We have demonstrated nano-structured Cu(In,Al)Se{sub 2} (CIAS) near-infrared (NIR) photodetectors (PDs). The CIAS NIR PDs were fabricated on ZnO nanowires (NWs)/ZnO/Mo/ITO (indium tin oxide) glass substrate. CIAS film acted as a sensing layer and sparse ZnSe NWs, which were converted from ZnO NWs after selenization process, were embedded in the CIAS film to improve the amplification performance of the NIR PDs. X-ray diffraction patterns show that the CIAS film is a single phased polycrystalline film. Scanning electron microscopy was used to examine the morphology of the CIAS film and the growth of NWs. Two detection schemes, plain Al–CIAS–Al metal–semiconductor–metal structure and vertical structure with CIAS/ZnSe NWs annular p–n junctions, were studied. The nano-structured NIR PDs demonstrate two orders of magnitude for the annular p–n junction and one order of magnitude for the MSM structure in photocurrent amplification. The responsivities of the PDs using both sensing structures have the same cut-off frequency near 790 nm. - Highlights: ► We demonstrate nano-structured Cu(In,Al)Se{sub 2} near-infrared photodetectors. ► Photodetectors were fabricated on ZnO nanowires/ZnO/Mo/ITO glass substrate. ► Two detection schemes studied: a plain MSM structure and a vertical structure. ► Photocurrent amplification for the vertical structure is two orders of magnitude. ► Photocurrent amplification for the MSM structure is one order of magnitude.

Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayer

KAUST Repository

Pak, Yusin

2017-12-05

2D molybdenum disulfide (MoS2) possesses excellent optoelectronic properties that make it a promising candidate for use in high-performance photodetectors. Yet, to meet the growing demand for practical and reliable MoS2 photodetectors, the critical issue of defect introduction to the interface between the exfoliated MoS2 and the electrode metal during fabrication must be addressed, because defects deteriorate the device performance. To achieve this objective, the use of an atomic layer-deposited TiO2 interlayer (between exfoliated MoS2 and electrode) is reported in this work, for the first time, to enhance the performance of MoS2 photodetectors. The TiO2 interlayer is inserted through 20 atomic layer deposition cycles before depositing the electrode metal on MoS2/SiO2 substrate, leading to significantly enhanced photoresponsivity and response speed. These results pave the way for practical applications and provide a novel direction for optimizing the interlayer material.

Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayer

KAUST Repository

Pak, Yusin; Park, Woojin; Mitra, Somak; Devi, Assa Aravindh Sasikala; Loganathan, Kalaivanan; Kumaresan, Yogeenth; Kim, Yonghun; Cho, Byungjin; Jung, Gun-Young; Hussain, Muhammad Mustafa; Roqan, Iman S.

2017-01-01

2D molybdenum disulfide (MoS2) possesses excellent optoelectronic properties that make it a promising candidate for use in high-performance photodetectors. Yet, to meet the growing demand for practical and reliable MoS2 photodetectors, the critical issue of defect introduction to the interface between the exfoliated MoS2 and the electrode metal during fabrication must be addressed, because defects deteriorate the device performance. To achieve this objective, the use of an atomic layer-deposited TiO2 interlayer (between exfoliated MoS2 and electrode) is reported in this work, for the first time, to enhance the performance of MoS2 photodetectors. The TiO2 interlayer is inserted through 20 atomic layer deposition cycles before depositing the electrode metal on MoS2/SiO2 substrate, leading to significantly enhanced photoresponsivity and response speed. These results pave the way for practical applications and provide a novel direction for optimizing the interlayer material.

Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors

Science.gov (United States)

Hoenk, Michael E. (Inventor); Greer, Frank (Inventor); Nikzad, Shouleh (Inventor)

2014-01-01

A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction.

Science.gov (United States)

Yu, Jingjing; Javaid, Kashif; Liang, Lingyan; Wu, Weihua; Liang, Yu; Song, Anran; Zhang, Hongliang; Shi, Wen; Chang, Ting-Chang; Cao, Hongtao

2018-03-07

A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p-n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium-gallium-zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnO x /IGZO heterojunction structure, through which the formation of a p-n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV-visible rejection ratio up to 3.5 × 10 7 , and a specific detectivity up to 3.3 × 10 14 Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays.

Characterization of time resolved photodetector systems for Positron Emission Tomography

CERN Document Server

Powolny, François

The main topic of this work is the study of detector systems composed of a scintillator, a photodetector and readout electronics, for Positron Emission Tomography (PET). In particular, the timing properties of such detector systems are studied. The first idea is to take advantage of the good timing properties of the NINO chip, which is a fast preamplifier-discriminator developed for the ALICE Time of flight detector at CERN. This chip uses a time over threshold technique that is to be applied for the first time in medical imaging applications. A unique feature of this technique is that it delivers both timing and energy information with a single digital pulse, the time stamp with the rising edge and the energy from the pulse width. This entails substantial simplification of the entire readout architecture of a tomograph. The scintillator chosen in the detector system is LSO. Crystals of 2x2x10mm3 were used. For the photodetector, APDs were first used, and were then replaced by SiPMs to make use of their highe...

Recovery of thermal-degraded ZnO photodetector by embedding nano silver oxide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Hu, Zhan-Shuo [Institute of Microelectronics, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Hung, Fei-Yi, E-mail: fyhung@mail.ncku.edu.tw [Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Chen, Kuan-Jen [Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); The Instrument Center, National Cheng Kung University, Tainan 701, Taiwan (China); Chang, Shoou-Jinn [Institute of Microelectronics, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Hsieh, Wei-Kang; Liao, Tsai-Yu; Chen, Tse-Pu [Institute of Microelectronics, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

2013-08-15

The degraded performance of annealed ZnO-based photodetector can be recovered by embedding Ag{sub 2}O nanoparticles resulted from the transformation of as-deposited Ag layer. After thermal treatment, the electrons were attracted at the interface between ZnO and Ag{sub 2}O. The excess Ag{sup +} ions form the cluster to incorporate into the interstitial sites of ZnO lattice to create a larger amount of lattice defects for the leakage path. The photo-current of ZnO film with Ag{sub 2}O nanoparticles is less than annealed ZnO film because the photo-induced electrons would flow into Ag{sub 2}O side. ZnO photodetector with the appropriate Ag{sub 2}O nanoparticles possesses the best rejection ratio.

Functionalization of embedded thiol-ene waveguides for evanescent wave induced fluorescence detection in a microfluidic device

DEFF Research Database (Denmark)

Feidenhans'l, Nikolaj Agentoft; Jensen, Thomas Glasdam; Lafleur, Josiane P.

2013-01-01

We demonstrate the use of functional surface groups inherently present on off-stoichiometric thiol−ene polymers, for site-specific immobilization of biomolecules and detection by evanescent wave-induced fluorescence. An optofluidic chip featuring an embedded thiol−ene waveguide was selectively...... functionalized with biotin using photografting. The biotin was used for immobilization of fluorescently labelled streptavidin, and experiments revealed a linear correlation between streptavidin concentration and fluorescent intensity. To further demonstrate the attractiveness of using thiol−ene for optofluidic...

Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction.

Science.gov (United States)

Chen, Xing; Liu, Kewei; Zhang, Zhenzhong; Wang, Chunrui; Li, Binghui; Zhao, Haifeng; Zhao, Dongxu; Shen, Dezhen

2016-02-17

Because of the direct band gap of 4.9 eV, β-Ga2O3 has been considered as an ideal material for solar-blind photodetection without any bandgap tuning. Practical applications of the photodetectors require fast response speed, high signal-to-noise ratio, low energy consumption and low fabrication cost. Unfortunately, most reported β-Ga2O3-based photodetectors usually possess a relatively long response time. In addition, the β-Ga2O3 photodetectors based on bulk, the individual 1D nanostructure, and the film often suffer from the high cost, the low repeatability, and the relatively large dark current, respectively. In this paper, a Au/β-Ga2O3 nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process. The device exhibits a very low dark current of 10 pA at -30 V with a sharp cutoff at 270 nm. More interestingly, the 90-10% decay time of our device is only around 64 μs, which is much quicker than any other previously reported β-Ga2O3-based photodetectors. Besides, the self-powering, the excellent stability and the good reproducibility of Au/β-Ga2O3 nanowires array film photodetector are helpful to its commercialization and practical applications.

Background–limited long wavelength infrared InAs/InAs1− xSbx type-II superlattice-based photodetectors operating at 110 K

Directory of Open Access Journals (Sweden)

Abbas Haddadi

2017-03-01

Full Text Available We report the demonstration of high-performance long-wavelength infrared (LWIR nBn photodetectors based on InAs/InAs1− xSbx type-II superlattices. A new saw-tooth superlattice design was used to implement the electron barrier of the photodetectors. The device exhibited a cut-off wavelength of ∼10 μ m at 77 K. The photodetector exhibited a peak responsivity of 2.65 A/W, corresponding to a quantum efficiency of 43%. With an R × A of 664 Ω · cm 2 and a dark current density of 8 × 10−5 A/cm2, under −80 mV bias voltage at 77 K, the photodetector exhibited a specific detectivity of 4.72 × 1011 cm· Hz / W and a background–limited operating temperature of 110 K.

Self-Powered, High-Speed and Visible-Near Infrared Response of MoO(3-x)/n-Si Heterojunction Photodetector with Enhanced Performance by Interfacial Engineering.

Science.gov (United States)

Zhao, Chuanxi; Liang, Zhimin; Su, Mingze; Liu, Pengyi; Mai, Wenjie; Xie, Weiguang

2015-11-25

Photodetectors with a wide spectrum response are important components for sensing, imaging, and other optoelectronic applications. A molybdenum oxide (MoO(3-x))/Si heterojunction has been applied as solar cells with great success, but its potential in photodetectors has not been explored yet. Herein, a self-powered, high-speed heterojunction photodetector fabricated by coating an n-type Si hierarchical structure with an ultrathin hole-selective layer of molybdenum oxide (MoO(3-x)) is first investigated. Excellent and stable photoresponse performance is obtained by using a methyl group passivated interface. The heterojunction photodetector demonstrated high sensitivity to a wide spectrum from 300 to 1100 nm. The self-powered photodetector shows a high detectivity of (∼6.29 × 10(12) cmHz(1/2) W(-1)) and fast response time (1.0 μs). The excellent photodetecting performance is attributed to the enhanced interfacial barrier height and three-dimensional geometry of Si nanostructures, which is beneficial for efficient photocarrier collection and transportation. Finally, our devices show excellent long-term stability in air for 6 months with negligible performance degradation. The thermal evaporation method for large-scale fabrication of MoO(3-x)/n-Si photodetectors makes it suitable for self-powered, multispectral, and high-speed response photodetecting applications.

Development of a PET detector module incorporating a silicon photodiode array

International Nuclear Information System (INIS)

Rosenfeld, A.B.; Takacs, G.J.; Lerch, M.L.F.; Simmonds, P.E.

2000-01-01

Full text: We are developing a new Positron Emission Tomography (PET) detection sub-module with depth of interaction capability. The new sub-module is simple and robust to minimise module assembly complications and is completely independent of photomultiplier tubes. The new sub-module has also been designed to maximise its flexibility for easy sub-module coupling so as to form a complete, customised, detection module to be used in PET scanners dedicated to human brain and breast, and small animal studies. Blue enhanced, silicon 8x8 detector arrays are used to read out the scintillation crystals, and form the basis of the new module. The new detectors were designed by the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong in collaboration with the High Energy Physics Department, University of Melbourne and produced by SPO D etector , Ukraine. Complementing the work on the silicon photodetectors, we have also carried out simulations of the propagation of the scintillation light in the crystals, and the effect of crystal dimensions and surface treatment on the distribution of light detected by the photodiode array. The distribution of light over the photodiodes has then been used to test various algorithms for calculating the point of interaction of the gamma ray in the crystal. Simulations of the light propagation show that for a crystal of dimensions 25mm x 25mm x 3mm, it is possible to determine the point of interaction in 2 dimensions with an average accuracy of just over 0.5mm. The resulting photon distribution detected by the array. The surface treatment, while having a large effect on the light output, does not have a great effect on the accuracy. If these dimensions change to 25mm x 25mm x 6mm then the surface conditions have a greater effect on the accuracy. It is possible however, with careful surface treatment, to achieve an accuracy of around 0.6mm, only marginally worse than the case for the 3mm thick crystal. Gamma ray

AlGaN-Based Solar-Blind Schottky Photodetectors Fabricated on AlN/Sapphire Template

International Nuclear Information System (INIS)

Li-Wen, Sang; Zhi-Xin, Qin; Long-Bin, Cen; Bo, Shen; Guo-Yi, Zhang; Shu-Ping, Li; Hang-Yang, Chen; Da-Yi, Liu; Jun-Yong, Kang; Cai-Jing, Cheng; Hong-Yan, Zhao; Zheng-Xiong, Lu; Jia-Xin, Ding; Lan, Zhao; Jun-Jie, Si; Wei-Guo, Sun

2008-01-01

We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff-wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1 × 10 −6 A/cm 2 at the reverse bias of 5 V. The specific detectivity D* is estimated to be 3.3 × 10 12 cmHz 1/2 W −1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current

Reflection and diffraction of atomic de Broglie waves by evanescent laser waves. Bare-state method

International Nuclear Information System (INIS)

Feng, Xiaoping; Witte, N.S.; Hollenberg, C.L.; Opat, G.

1994-01-01

Two methods are presented for the investigation of the reflection and diffraction of atoms by gratings formed either by standing or travelling evanescent laser waves. Both methods use the bare-state rather than dressed-state picture. One method is based on the Born series, whereas the other is based on the Laplace transformation of the coupled differential equations. The two methods yield the same theoretical expressions for the reflected and diffracted atomic waves in the whole space including the interaction and the asymptotic regions. 1 ref., 1 fig

Evanescent field characterisation for a d-shaped optical fibre using scanning near-field optical microscopy

International Nuclear Information System (INIS)

Huntington, S.T.; Nugent, K.A.; Roberts, A.; Mulvaney, P.; Lo, K.M.

1997-01-01

Scanning near field optical microscopy is used to measure the evanescent filed and mode profile of a Ge-doped D-shaped optical fibre. The structure of the fibre is determined by differential etching followed by an investigation of the resultant topography with an atomic force microscope. This information is then used to theoretically model the expected behaviour of the fibre and it is shown that the theoretically model the expected behaviour of the fibre and it is shown that the theoretical results are in excellent agreement with the experimentally observed fields

Spectral response, dark current, and noise analyses in resonant tunneling quantum dot infrared photodetectors.

Science.gov (United States)

Jahromi, Hamed Dehdashti; Mahmoodi, Ali; Sheikhi, Mohammad Hossein; Zarifkar, Abbas

2016-10-20

Reduction of dark current at high-temperature operation is a great challenge in conventional quantum dot infrared photodetectors, as the rate of thermal excitations resulting in the dark current increases exponentially with temperature. A resonant tunneling barrier is the best candidate for suppression of dark current, enhancement in signal-to-noise ratio, and selective extraction of different wavelength response. In this paper, we use a physical model developed by the authors recently to design a proper resonant tunneling barrier for quantum infrared photodetectors and to study and analyze the spectral response of these devices. The calculated transmission coefficient of electrons by this model and its dependency on bias voltage are in agreement with experimental results. Furthermore, based on the calculated transmission coefficient, the dark current of a quantum dot infrared photodetector with a resonant tunneling barrier is calculated and compared with the experimental data. The validity of our model is proven through this comparison. Theoretical dark current by our model shows better agreement with the experimental data and is more accurate than the previously developed model. Moreover, noise in the device is calculated. Finally, the effect of different parameters, such as temperature, size of quantum dots, and bias voltage, on the performance of the device is simulated and studied.

10Gbps monolithic silicon FTTH transceiver for PON

Science.gov (United States)

Zhang, J.; Liow, T. Y.; Lo, G. Q.; Kwong, D. L.

2010-05-01

We propose a new passive optical network (PON) configuration and a novel silicon photonic transceiver architecture for optical network unit (ONU), eliminating the need for an internal laser source in ONU. We adopt dual fiber network configuration. The internal light source in each of the ONUs is eliminated. Instead, an extra seed laser source in the optical line termination (OLT) operates in continuous wave mode to serve the ONUs in the PON as a shared and centralized laser source. λ1 from OLT Tx and λ2 from the seed laser are combined by using a WDM combiner and connected to serve the multiple ONUs through the downstream fibers. The ONUs receive the data in λ1. Meanwhile, the ONUs encode and transmit data in λ2, which are sent back to OLT. The monolithic ONU transceiver contains a wavelength-division-multiplexing (WDM) filter component, a silicon modulator and a Ge photo-detector. The WDM in ONU selectively guides λ1 to the Ge-PD where the data in λ1 are detected and converted to electrical signals, and λ2 to the transmitter where the light is modulated by upstream data. The modulated optical signals in λ2 from ONUs are connected back to OLT through upstream fibers. The monolithic ONU transceiver chip size is only 2mm by 4mm. The crosstalk between the Tx and Rx is measured to be less than -20dB. The transceiver chip is integrated on a SFP+ transceiver board. Both Tx and Rx demonstrated data rate capabilities of up to 10Gbps. By implementing this scheme, the ONU transceiver size can be significantly reduced and the assembly processes will be greatly simplified. The results demonstrate the feasibility of mass manufacturing monolithic silicon ONU transceivers via low cost

Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography

KAUST Repository

Wyatt-Moon, Gwenhivir

2017-11-28

Adhesion lithography (a-Lith) is a versatile fabrication technique used to produce asymmetric coplanar electrodes separated by a <15 nm nanogap. Here, we use a-Lith to fabricate deep ultraviolet (DUV) photodetectors by combining coplanar asymmetric nanogap electrode architectures (Au/Al) with solution-processable wide-band-gap (3.5–3.9 eV) p-type semiconductor copper(I) thiocyanate (CuSCN). Because of the device’s unique architecture, the detectors exhibit high responsivity (≈79 A W–1) and photosensitivity (≈720) when illuminated with a DUV-range (λpeak = 280 nm) light-emitting diode at 220 μW cm–2. Interestingly, the photosensitivity of the photodetectors remains fairly high (≈7) even at illuminating intensities down to 0.2 μW cm–2. The scalability of the a-Lith process combined with the unique properties of CuSCN paves the way to new forms of inexpensive, yet high-performance, photodetectors that can be manufactured on arbitrary substrate materials including plastic.

Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography

KAUST Repository

Wyatt-Moon, Gwenhivir; Georgiadou, Dimitra G; Semple, James; Anthopoulos, Thomas D.

2017-01-01

Adhesion lithography (a-Lith) is a versatile fabrication technique used to produce asymmetric coplanar electrodes separated by a <15 nm nanogap. Here, we use a-Lith to fabricate deep ultraviolet (DUV) photodetectors by combining coplanar asymmetric nanogap electrode architectures (Au/Al) with solution-processable wide-band-gap (3.5–3.9 eV) p-type semiconductor copper(I) thiocyanate (CuSCN). Because of the device’s unique architecture, the detectors exhibit high responsivity (≈79 A W–1) and photosensitivity (≈720) when illuminated with a DUV-range (λpeak = 280 nm) light-emitting diode at 220 μW cm–2. Interestingly, the photosensitivity of the photodetectors remains fairly high (≈7) even at illuminating intensities down to 0.2 μW cm–2. The scalability of the a-Lith process combined with the unique properties of CuSCN paves the way to new forms of inexpensive, yet high-performance, photodetectors that can be manufactured on arbitrary substrate materials including plastic.

Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga{sub 2}O{sub 3} solar-blind ultraviolet photodetectors

Energy Technology Data Exchange (ETDEWEB)

Guo, D. Y.; Wu, Z. P.; An, Y. H.; Guo, X. C.; Chu, X. L.; Sun, C. L.; Tang, W. H., E-mail: whtang@bupt.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Li, L. H. [Physics Department, The State University of New York at Potsdam, Potsdam, New York 13676-2294 (United States); Li, P. G., E-mail: pgli@zstu.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018 Zhejiang (China)

2014-07-14

β-Ga{sub 2}O{sub 3} epitaxial thin films were deposited using laser molecular beam epitaxy technique and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy. Metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately. Au/Ti electrodes were Ohmic contact with the as-grown films and Schottky contact with the annealed films. In compare with the Ohmic-type photodetector, the Schottky-type photodetector takes on lower dark current, higher photoresponse, and shorter switching time, which benefit from Schottky barrier controlling electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.

Color sensitive silicon photomultiplers with micro-cell level encoding for DOI PET detectors

Science.gov (United States)

Shimazoe, Kenji; Koyama, Akihiro; Takahashi, Hiroyuki; Ganka, Thomas; Iskra, Peter; Marquez Seco, Alicia; Schneider, Florian; Wiest, Florian

2017-11-01

There have been many studies on Depth Of Interaction (DOI) identification for high resolution Positron Emission Tomography (PET) systems, including those on phoswich detectors, double-sided readout, light sharing methods, and wavelength discrimination. The wavelength discrimination method utilizes the difference in wavelength of stacked scintillators and requires a color sensitive photodetector. Here, a new silicon photomultiplier (SiPM) coupled to a color filter (colorSiPM) was designed and fabricated for DOI detection. The fabricated colorSiPM has two anode readouts that are sensitive to blue and green color. The colorSiPM's response and DOI identification capability for stacked GAGG and LYSO crystals are characterized. The fabricated colorSiPM is sensitive enough to detect a peak of 662 keV from a 137 Cs source.

Influence of the contact geometry on single-walled carbon nanotube/Si photodetector response

Science.gov (United States)

Scagliotti, Mattia; Salvato, Matteo; De Crescenzi, Maurizio; Boscardin, Maurizio; Castrucci, Paola

2018-03-01

A systematic study of the optical response of photodetectors based on carbon nanotube/Si heterojunctions is performed by measuring the responsivity, the detectivity and the time response of the devices with different contact configurations. The sensors are obtained by dry transferring single-walled carbon nanotube films on the surface of n-doped Si substrate provided with a multifinger contact geometry. The experimental data show a consistent improvement of the photodetector parameters with the increase of the number of fingers without affecting the carbon nanotube film thickness for increase its optical transmittance as in previous experiments. The role of the electrical resistance of the carbon nanotube film is discussed. The obtained results confirm the method and suggest new perspectives in the use of nanostructured materials as part of semiconducting optical devices.

Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors.

Science.gov (United States)

Nasiri, Noushin; Bo, Renheng; Fu, Lan; Tricoli, Antonio

2017-02-02

Visible-blind ultraviolet photodetectors are a promising emerging technology for the development of wide bandgap optoelectronic devices with greatly reduced power consumption and size requirements. A standing challenge is to improve the slow response time of these nanostructured devices. Here, we present a three-dimensional nanoscale heterojunction architecture for fast-responsive visible-blind UV photodetectors. The device layout consists of p-type NiO clusters densely packed on the surface of an ultraporous network of electron-depleted n-type ZnO nanoparticles. This 3D structure can detect very low UV light densities while operating with a near-zero power consumption of ca. 4 × 10 -11 watts and a low bias of 0.2 mV. Most notably, heterojunction formation decreases the device rise and decay times by 26 and 20 times, respectively. These drastic enhancements in photoresponse dynamics are attributed to the stronger surface band bending and improved electron-hole separation of the nanoscale NiO/ZnO interface. These findings demonstrate a superior structural design and a simple, low-cost CMOS-compatible process for the engineering of high-performance wearable photodetectors.

Core-cladding mode coupling and recoupling in photonic crystal fiber for enhanced overlap of evanescent field using long-period gratings

Czech Academy of Sciences Publication Activity Database

He, Z.; Zhu, Y.; Kaňka, Jiří; Du, H.

2010-01-01

Roč. 18, č. 2 (2010), s. 507-512 ISSN 1094-4087 R&D Projects: GA ČR GA102/08/1719 Institutional research plan: CEZ:AV0Z20670512 Keywords : Photonic crystal fiber * Long-period grating * Fiber-optic evanescent sensor Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 3.749, year: 2010

Ultrasensitive near-infrared photodetectors based on graphene-MoTe2-graphene vertical van der Waals heterostructure

Science.gov (United States)

Zhang, Kun; Ye, Yu; Dai, Lun; School of Physics, Peking University Team

Two-dimensional (2D) materials have rapidly established themselves as exceptional building blocks for optoelectronic applications, due to their unique properties and atomically thin nature. Nevertheless, near-infrared (NIR) photodetectors based on layered 2D semiconductors are rarely realized. In this work, we fabricate graphene-MoTe2-graphene vertical vdWs heterostructure by a facile and reliable site controllable transfer method, and apply it for photodetection from visible to the NIR wavelength range. Compared to the 2D semiconductor based photodetectors reported thus far, the graphene-MoTe2-graphene photodetector has superior performance, including high photoresponsivity (110 mA W-1 at 1064 nm and 205 mA W-1 at 473 nm), high external quantum efficiency (EQE, 12.9% at 1064 nm and 53.8% at 473 nm), rapid response and recovery processes (rise time of 24 μs, fall time of 46 μs under 1064 nm illumination), and free from an external source-drain power supply. The all-2D-materials heterostructure has promising applications in future novel high responsivity, high speed and flexible NIR devices.

Bolometric-Effect-Based Wavelength-Selective Photodetectors Using Sorted Single Chirality Carbon Nanotubes

Science.gov (United States)

Zhang, Suoming; Cai, Le; Wang, Tongyu; Shi, Rongmei; Miao, Jinshui; Wei, Li; Chen, Yuan; Sepúlveda, Nelson; Wang, Chuan

2015-01-01

This paper exploits the chirality-dependent optical properties of single-wall carbon nanotubes for applications in wavelength-selective photodetectors. We demonstrate that thin-film transistors made with networks of carbon nanotubes work effectively as light sensors under laser illumination. Such photoresponse was attributed to photothermal effect instead of photogenerated carriers and the conclusion is further supported by temperature measurements. Additionally, by using different types of carbon nanotubes, including a single chirality (9,8) nanotube, the devices exhibit wavelength-selective response, which coincides well with the absorption spectra of the corresponding carbon nanotubes. This is one of the first reports of controllable and wavelength-selective bolometric photoresponse in macroscale assemblies of chirality-sorted carbon nanotubes. The results presented here provide a viable route for achieving bolometric-effect-based photodetectors with programmable response spanning from visible to near-infrared by using carbon nanotubes with pre-selected chiralities. PMID:26643777

Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

Science.gov (United States)

Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

2018-04-01

Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

Two color photodetector using an asymmetric quantum well structure

OpenAIRE

Lantz, Kevin R.

2002-01-01

Approved for public release; distribution is unlimited The past twenty years have seen an explosion in the realm of infrared detection technology fueled by improvements in III-V semiconductor technology and by new semiconductor growth methods. One of the fastest growing areas of this research involves the use of bandgap engineering in order to create artificial quantum wells for use in Quantum Well Infrared Photodetectors (QWIPs). QWIPs have an advantage over other infrared detectors such ...

Detection of Cadmium Ion by Evanescent Wave Based Chitosan Coated Optical Fiber Sensor

International Nuclear Information System (INIS)

Yulianti, I; Edy, S S; Saputra, B A; Aji, M P; Susanto; Kurdi, O

2017-01-01

Evanescent wave based-optical fiber sensor to detect cadmium ion is proposed. Chitosan was used by using the dip-coating method. The sensor was fabricated in U-bent shape. U-bent optical sensor at aconcentration of 2ppm and 5ppm had asensitivity of 0.2067 dBm/ppm and -0.7995 dBm/ppm, respectively. At a level of 2ppm - 5ppm, the optical sensor has a linear response with asensitivity of -0.283 dBm/ppm. The sensor takes 9.5 minutes to reach steady stateat aconcentration of 1 ppm. Atalevel of 2ppm - 5ppm, the sensor takes 5 minutes to 10.45 minutes to reach steady state. (paper)

Handheld Longwave Infrared Camera Based on Highly-Sensitive Quantum Well Infrared Photodetectors, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — We propose to develop a compact handheld longwave infrared camera based on quantum well infrared photodetector (QWIP) focal plane array (FPA) technology. Based on...

Integrated reconfigurable microring based silicon WDM receiver for on-chip optical interconnect

International Nuclear Information System (INIS)

Shen, Ao; Yang, Long-Zhi; Dai, Ting-Ge; Hao, Yin-Lei; Jiang, Xiao-Qing; Yang, Jian-Yi; Qiu, Chen

2015-01-01

We demonstrate an integrated reconfigurable wavelength division multiplexing receiver on the silicon-on-insulator (SOI) platform. The receiver is composed of a 1 × 8 thermally tunable microring resonator filter and Ge–Si photodetectors. With low thermal tuning powers the channel allocation of the receiver can be reconfigured with high accuracy and flexibility. The thermal tuning efficiency is approximately 8 mW nm −1 . We show eight-channel configurations with channel spacing of 100 GHz and 50 GHz and a configuration in which all eight channels cover an entire free spectral range of the ring with uniform channel spacing of 1.2 nm. Each channel can receive high-quality signals with a data rate of up to 13.5 Gb s −1 ; thus an aggregate data rate higher than 100 Gb s −1 can be achieved. (paper)

Broadband Packaging of Photodetectors for 100 Gb/s Ethernet Applications

DEFF Research Database (Denmark)

Jiang, Chenhui; Krozer, Viktor; Bach, Heinz-Gunter

2013-01-01

The packing structure of functional modules is a major limitaion in achieving a desired performance for 100 Gb/s ethernet applications. This paper presents a methodology of developing advanced packaging of photodetectors (PDs) for high-speed data transmission applications by using 3-D electromagn......The packing structure of functional modules is a major limitaion in achieving a desired performance for 100 Gb/s ethernet applications. This paper presents a methodology of developing advanced packaging of photodetectors (PDs) for high-speed data transmission applications by using 3-D...... electromagnetic (EM) simulations. A simplified model of the PD module is first used to analyze and optimize packaging structures and propose an optimal packaging design based on the simplified model. Although a PD module with improved performance proved the success of the optimal packaging design, the simplified...... of limiting the bandwidth of PD modules. After eliminating the mode mismatch effect by improving the chip-conductor-backed coplanar waveguide transition, a final optimal packaging structure is implemented for the PD module with reduced attenuation up to 100 GHz and a broader 3-dB bandwidth of more than 90 GHz...

Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

International Nuclear Information System (INIS)

Wei Xia; Yan Fa-Guang; Shen Chao; Lv Quan-Shan; Wang Kai-You

2017-01-01

Transition metal dichalcogenides (TMDCs) have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorption from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional (2D) materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs. (topical reviews)

All-Si photodetector for telecommunication wavelength based on subwavelength grating structure and critical coupling

Directory of Open Access Journals (Sweden)

Alireza Taghizadeh

2017-09-01

Full Text Available We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered subwavelength grating structure topped with a silicide layer of nanometers thickness as an absorbing material. It is shown that a nearly-perfect light absorption is possible for the thin silicide layer by its integration to the grating resonator. The absorption is shown to be maximized when the critical coupling condition is satisfied. Simulations show that the external quantum efficiency of the proposed photodetector with a 2-nm-thick PtSi absorbing layer at the center wavelength of 1550 nm can reach up to ∼60%.

Enhanced Photocurrent in BiFeO3 Materials by Coupling Temperature and Thermo-Phototronic Effects for Self-Powered Ultraviolet Photodetector System.

Science.gov (United States)

Qi, Jia; Ma, Nan; Ma, Xiaochen; Adelung, Rainer; Yang, Ya

2018-04-25

Ferroelectric materials can be utilized for fabricating photodetectors because of the photovoltaic effect. Enhancing the photovoltaic performance of ferroelectric materials is still a challenge. Here, a self-powered ultraviolet (UV) photodetector is designed based on the ferroelectric BiFeO 3 (BFO) material, exhibiting a high current/voltage response to 365 nm light in heating/cooling states. The photovoltaic performance of the BFO-based device can be well modulated by applying different temperature variations, where the output current and voltage can be enhanced by 60 and 75% in heating and cooling states, respectively. The enhancement mechanism of the photocurrent is associated with both temperature effect and thermo-phototronic effect in the photovoltaic process. Moreover, a 4 × 4 matrix photodetector array has been designed for detecting the 365 nm light distribution in the cooling state by utilizing photovoltage signals. This study clarifies the role of the temperature effect and the thermo-phototronic effect in the photovoltaic process of the BFO material and provides a feasible route for pushing forward practical applications of self-powered UV photodetectors.

Spectrally-Tunable Infrared Camera Based on Highly-Sensitive Quantum Well Infrared Photodetectors, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — We propose to develop a SPECTRALLY-TUNABLE INFRARED CAMERA based on quantum well infrared photodetector (QWIP) focal plane array (FPA) technology. This will build on...

Split Bull's eye shaped aluminum antenna for plasmon-enhanced nanometer scale germanium photodetector.

Science.gov (United States)

Ren, Fang-Fang; Ang, Kah-Wee; Ye, Jiandong; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee

2011-03-09

Bull's eye antennas are capable of efficiently collecting and concentrating optical signals into an ultrasmall area, offering an excellent solution to break the bottleneck between speed and photoresponse in subwavelength photodetectors. Here, we exploit the idea of split bull's eye antenna for a nanometer germanium photodetector operating at a standard communication wavelength of 1310 nm. The nontraditional plasmonic metal aluminum has been implemented in the resonant antenna structure fabricated by standard complementary metal-oxide-semiconductor (CMOS) processing. A significant enhancement in photoresponse could be achieved over the conventional bull's eye scheme due to an increased optical near-field in the active region. Moreover, with this novel antenna design the effective grating area could be significantly reduced without sacrificing device performance. This work paves the way for the future development of low-cost, high-density, and high-speed CMOS-compatible germanium-based optoelectronic devices.

Hybrid III-V/SOI resonant cavity enhanced photodetector

DEFF Research Database (Denmark)

Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

2016-01-01

A hybrid III–V/SOI resonant-cavity-enhanced photodetector (RCE-PD) structure comprising a high-contrast grating (HCG) reflector, a hybrid grating (HG) reflector, and an air cavity between them, has been proposed and investigated. In the proposed structure, a light absorbing material is integrated...... as part of the HG reflector, enabling a very compact vertical cavity. Numerical investigations show that a quantum efficiency close to 100 % and a detection linewidth of about 1 nm can be achieved, which are desirable for wavelength division multiplexing applications. Based on these results, a hybrid RCE...

Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector.

Science.gov (United States)

Li, Xiaoqiang; Lin, Shisheng; Lin, Xing; Xu, Zhijuan; Wang, Peng; Zhang, Shengjiao; Zhong, Huikai; Xu, Wenli; Wu, Zhiqian; Fang, Wei

2016-01-11

In graphene/semiconductor heterojunction, the statistic charge transfer between graphene and semiconductor leads to decreased junction barrier height and limits the Fermi level tuning effect in graphene, which greatly affects the final performance of the device. In this work, we have designed a sandwich diode for solar cells and photodetectors through inserting 2D hexagonal boron nitride (h-BN) into graphene/GaAs heterostructure to suppress the static charge transfer. The barrier height of graphene/GaAs heterojunction can be increased from 0.88 eV to 1.02 eV by inserting h-BN. Based on the enhanced Fermi level tuning effect with interface h-BN, through adopting photo-induced doping into the device, power conversion efficiency (PCE) of 10.18% has been achieved for graphene/h-BN/GaAs compared with 8.63% of graphene/GaAs structure. The performance of graphene/h-BN/GaAs based photodetector is also improved with on/off ratio increased by one magnitude compared with graphene/GaAs structure.

Enhanced Graphene Photodetector with Fractal Metasurface

DEFF Research Database (Denmark)

Fang, Jieran; Wang, Di; DeVault, Clayton T

2017-01-01

Graphene has been demonstrated to be a promising photodetection material because of its ultrabroadband optical absorption, compatibility with CMOS technology, and dynamic tunability in optical and electrical properties. However, being a single atomic layer thick, graphene has intrinsically small...... optical absorption, which hinders its incorporation with modern photodetecting systems. In this work, we propose a gold snowflake-like fractal metasurface design to realize broadband and polarization-insensitive plasmonic enhancement in graphene photodetector. We experimentally obtain an enhanced...... photovoltage from the fractal metasurface that is an order of magnitude greater than that generated at a plain gold-graphene edge and such an enhancement in the photovoltage sustains over the entire visible spectrum. We also observed a relatively constant photoresponse with respect to polarization angles...

Monolithic and Flexible ZnS/SnO2 Ultraviolet Photodetectors with Lateral Graphene Electrodes.

Science.gov (United States)

Zhang, Cheng; Xie, Yunchao; Deng, Heng; Tumlin, Travis; Zhang, Chi; Su, Jheng-Wun; Yu, Ping; Lin, Jian

2017-05-01

A continuing trend of miniaturized and flexible electronics/optoelectronic calls for novel device architectures made by compatible fabrication techniques. However, traditional layer-to-layer structures cannot satisfy such a need. Herein, a novel monolithic optoelectronic device fabricated by a mask-free laser direct writing method is demonstrated in which in situ laser induced graphene-like materials are employed as lateral electrodes for flexible ZnS/SnO 2 ultraviolet photodetectors. Specifically, a ZnS/SnO 2 thin film comprised of heterogeneous ZnS/SnO 2 nanoparticles is first coated on polyimide (PI) sheets by a solution process. Then, CO 2 laser irradiation ablates designed areas of the ZnS/SnO 2 thin film and converts the underneath PI into highly conductive graphene as the lateral electrodes for the monolithic photodetectors. This in situ growth method provides good interfaces between the graphene electrodes and the semiconducting ZnS/SnO 2 resulting in high optoelectronic performance. The lateral electrode structure reduces total thickness of the devices, thus minimizing the strain and improving flexibility of the photodetectors. The demonstrated lithography-free monolithic fabrication is a simple and cost-effective method, showing a great potential for developement into roll-to-roll manufacturing of flexible electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultra-wide frequency response measurement of an optical system with a DC photo-detector

KAUST Repository

Kuntz, Katanya B.; Wheatley, Trevor A.; Song, Hongbin; Webb, James G.; Mabrok, Mohamed; Huntington, Elanor H.; Yonezawa, Hidehiro

2017-01-01

Precise knowledge of an optical device's frequency response is crucial for it to be useful in most applications. Traditional methods for determining the frequency response of an optical system (e.g. optical cavity or waveguide modulator) usually rely on calibrated broadband photo-detectors or complicated RF mixdown operations. As the bandwidths of these devices continue to increase, there is a growing need for a characterization method that does not have bandwidth limitations, or require a previously calibrated device. We demonstrate a new calibration technique on an optical system (consisting of an optical cavity and a high-speed waveguide modulator) that is free from limitations imposed by detector bandwidth, and does not require a calibrated photo-detector or modulator. We use a low-frequency (DC) photo-detector to monitor the cavity's optical response as a function of modulation frequency, which is also used to determine the modulator's frequency response. Knowledge of the frequency-dependent modulation depth allows us to more precisely determine the cavity's characteristics (free spectral range and linewidth). The precision and repeatability of our technique is demonstrated by measuring the different resonant frequencies of orthogonal polarization cavity modes caused by the presence of a non-linear crystal. Once the modulator has been characterized using this simple method, the frequency response of any passive optical element can be determined to a fine resolution (e.g. kilohertz) over several gigahertz.

Enhanced Electron Photoemission by Collective Lattice Resonances in Plasmonic Nanoparticle-Array Photodetectors and Solar Cells

DEFF Research Database (Denmark)

Zhukovsky, Sergei; Babicheva, Viktoriia; Uskov, Alexander

2014-01-01

We propose to use collective lattice resonances in plasmonic nanoparticle arrays to enhance and tailor photoelectron emission in Schottky barrier photodetectors and solar cells. We show that the interaction between narrow-band lattice resonances (the Rayleigh anomaly) and broader-band individual-particle...... excitations (localized surface plasmon resonances) leads to stronger local field enhancement. In turn, this causes a significant increase of the photocurrent compared to the case when only individual-particle excitations are present. The results can be used to design new photodetectors with highly selective......, tunable spectral response, which are able to detect photons with the energy below the semiconductor bandgap. The findings can also be used to develop solar cells with increased efficiency....

P-doped organic semiconductor: Potential replacement for PEDOT:PSS in organic photodetectors

Energy Technology Data Exchange (ETDEWEB)

Herrbach, J.; Revaux, A., E-mail: amelie.revaux@cea.fr [University of Grenoble Alpes, CEA-LITEN, Grenoble 38000 (France); Vuillaume, D. [IEMN, CNRS, University of Lille, Villeneuve d' Ascq 59652 (France); Kahn, A. [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

2016-08-15

In this work, we present an alternative to the use of PEDOT:PSS as hole transport and electron blocking layers in organic photodetectors processed by solution. As Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) is known to be sensitive to humidity, oxygen, and UV, removing this layer is essential for lifetime improvements. As a first step to achieving this goal, we need to find an alternative layer that fulfills the same role in order to obtain a working diode with similar or better performance. As a replacement, a layer of poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b′)dithiophene)-2, 6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-c) p-doped with the dopant tris-[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-COCF{sub 3}){sub 3}) is used. This p-doped layer effectively lowers the hole injection barrier, and the low electron affinity of the polymer prevents the injection of electrons into the active layer. We show similar device performance under light and the improvements of detection performance with the doped layer in comparison with PEDOT:PSS, leading to a detectivity of 1.9 × 10{sup 13} cm (Hz){sup 1/2} (W){sup −1}, competitive with silicon diodes used in imaging applications. Moreover, contrary to PEDOT:PSS, no localization of the p-doped layer is needed, leading to a diode active area defined by the patterned electrodes.

A Self-Powered and Flexible Organometallic Halide Perovskite Photodetector with Very High Detectivity

KAUST Repository

Leung, Siu; Ho, Kang-Ting; Kung, Po-Kai; Hsiao, Vincent K. S.; Alshareef, Husam N.; Wang, Zhong Lin; He, Jr-Hau

2018-01-01

Flexible and self-powered photodetectors (PDs) are highly desirable for applications in image sensing, smart building, and optical communications. In this paper, a self-powered and flexible PD based on the methylammonium lead iodide (CH3 NH3 PBI3

Self-Powered UV-Near Infrared Photodetector Based on Reduced Graphene Oxide/n-Si Vertical Heterojunction.

Science.gov (United States)

Li, Guanghui; Liu, Lin; Wu, Guan; Chen, Wei; Qin, Sujie; Wang, Yi; Zhang, Ting

2016-09-01

A novel self-powered photodetector based on reduced graphene oxide (rGO)/n-Si p-n vertical heterojunction with high sensitivity and fast response time is presented. The photodetector contains a p-n vertical heterojunction between a drop-casted rGO thin film and n-Si. Contacts between the semiconductor layer (rGO, n-Si) and source-drain Ti/Au electrodes allow efficient transfer of photogenerated charge carriers. The self-powered UV-near infrared photodetector shows high sensitivity toward a spectrum of light from 365 to 1200 nm. Under the 600 nm illumination (0.81 mW cm -2 ), the device has a photoresponsivity of 1.52 A W -1 , with fast response and recover time (2 ms and 3.7 ms), and the ON/OFF ratios exceed 10 4 when the power density reaches ≈2.5 mW cm -2 . The high photoresponse primarily arises from the built-in electric field formed at the interface of n-Si and rGO film. The effect of rGO thickness, rGO reduction level, and layout of rGO/n-Si effective contact area on device performance are also systematically investigated. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Local irradiation effects of one-dimensional ZnO based self-powered asymmetric Schottky barrier UV photodetector

Energy Technology Data Exchange (ETDEWEB)

Zhao, Yaxue [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Qi, Junjie, E-mail: junjieqi@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Biswas, Chandan [Department of Electrical Engineering, University of California Los Angeles, California 90095 (United States); Li, Feng; Zhang, Kui; Li, Xin [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Zhang, Yue, E-mail: yuezhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083 (China)

2015-09-15

A self-powered metal-semiconductor-metal (MSM) UV photodetector was successfully fabricated based on Ag/ZnO/Au structure with asymmetric Schottky barriers. This exhibits excellent performance compared to many previous studies. Very high photo-to-dark current ratio (approximately 10{sup 5}–10{sup 6}) was demonstrated without applying any external bias, and very fast switching time of less than 30 ms was observed during the investigation. Opposite photocurrent direction was generated by irradiating different Schottky diodes in the fabricated photodetector. Furthermore, the device performance was optimized by largely irradiating both the ZnO microwire (MW) junctions. Schottky barrier effect theory and O{sub 2} adsorption–desorption theories were used to investigate the phenomenon. The device has potential applications in self-powered UV detection field and can be used as electrical power source for electronic, optoelectronic and mechanical devices. - Highlights: • A self-powered Schottky barrier UV photodetector based on 1-D ZnO is fabricated. • For the first time we investigate the local irradiation effects of UV detector. • Irradiating both the junctions and ZnO can optimize the performance of the device.

Performance evaluation of SiPM photodetectors for PET imaging in the presence of magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Espana, S., E-mail: samuel@nuclear.fis.ucm.e [Grupo de Fisica Nuclear, Dpto. Fisica Atomica, Molecular y Nuclear, Universidad Complutense de Madrid (Spain); Fraile, L.M.; Herraiz, J.L.; Udias, J.M. [Grupo de Fisica Nuclear, Dpto. Fisica Atomica, Molecular y Nuclear, Universidad Complutense de Madrid (Spain); Desco, M.; Vaquero, J.J. [Unidad de Medicina y Cirugia Experimental, Hospital General Universitario Gregorio Maranon, Madrid (Spain)

2010-02-01

The multi-pixel photon counter (MPPC) or silicon photomultiplier (SiPM), recently introduced as a solid-state photodetector, consists of an array of Geiger-mode photodiodes (microcells). It is a promising device for PET due to its potential for high photon detection efficiency (PDE) and its foreseeable immunity to magnetic fields. It is also easy to use with simple read-outs, has a high gain and a small size. In this work we evaluate the in field performance of three 1x1 mm{sup 2} (with 100, 400 and 1600 microcells, respectively) and one 6x6 mm{sup 2} (arranged as a 2x2 array) Hamamatsu MPPCs for their use in PET imaging. We examine the dependence of the energy resolution and the gain of these devices on the temperature and reverse bias voltage, when coupled to LYSO scintillator crystals under conditions that one would find in a PET system. We find that the 400 and 1600 microcells models and the 2x2 array are suitable for small-size crystals, like those employed in high resolution small animal scanners. We have confirmed the good performance of these devices up to magnetic fields of 7 T as well as their suitability for performing PET acquisitions in the presence of fast switching gradients and high duty radiofrequency MRI sequences.

Donor and Acceptor Polymers for Bulk Hetero Junction Solar Cell and Photodetector Applications

KAUST Repository

Cruciani, Federico

2018-01-01

-13% and being a step closer to practical applications. Among the photodetectors (PD), low band gap polymer blended with PCBM decked out the attention, given their extraordinary range of detection from UV to IR and high detectivity values reached so far, compared

Robust and Air-Stable Sandwiched Organo-Lead Halide Perovskites for Photodetector Applications

KAUST Repository

Mohammed, Omar F.

2016-02-25

We report the simplest possible method to date for fabricating robust, air-stable, sandwiched perovskite photodetectors. Our proposed sandwiched structure is devoid of electron or hole transporting layers and also the expensive electrodes. These simpler architectures may have application in the perovskite-only class of solar cells scaling up towards commercialization.

Evanescent field: A potential light-tool for theranostics application

Science.gov (United States)

Polley, Nabarun; Singh, Soumendra; Giri, Anupam; Pal, Samir Kumar

2014-03-01

A noninvasive or minimally invasive optical approach for theranostics, which would reinforce diagnosis, treatment, and preferably guidance simultaneously, is considered to be major challenge in biomedical instrument design. In the present work, we have developed an evanescent field-based fiber optic strategy for the potential theranostics application in hyperbilirubinemia, an increased concentration of bilirubin in the blood and is a potential cause of permanent brain damage or even death in newborn babies. Potential problem of bilirubin deposition on the hydroxylated fiber surface at physiological pH (7.4), that masks the sensing efficacy and extraction of information of the pigment level, has also been addressed. Removal of bilirubin in a blood-phantom (hemoglobin and human serum albumin) solution from an enhanced level of 77 μM/l (human jaundice >50 μM/l) to ˜30 μM/l (normal level ˜25 μM/l in human) using our strategy has been successfully demonstrated. In a model experiment using chromatography paper as a mimic of biological membrane, we have shown efficient degradation of the bilirubin under continuous monitoring for guidance of immediate/future course of action.

Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

Science.gov (United States)

Olson, B. V.; Kim, J. K.; Kadlec, E. A.; Klem, J. F.; Hawkins, S. D.; Leonhardt, D.; Coon, W. T.; Fortune, T. R.; Cavaliere, M. A.; Tauke-Pedretti, A.; Shaner, E. A.

2015-11-01

Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F1F2|=0.292 . The measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. Excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors.

An ultraviolet photodetector fabricated from WO3 nanodiscs/reduced graphene oxide composite material

International Nuclear Information System (INIS)

Shao Dali; Sawyer, Shayla; Yu Mingpeng; Lian Jie

2013-01-01

A high sensitivity, fast ultraviolet (UV) photodetector was fabricated from WO 3 nanodiscs (NDs)/reduced graphene oxide (RGO) composite material. The WO 3 NDs/reduced GO composite material was synthesized using a facile three-step synthesis procedure. First, the Na 2 WO 4 /GO precursor was synthesized by homogeneous precipitation. Second, the Na 2 WO 4 /GO precursor was transformed into H 2 WO 4 /GO composites by acidification. Finally, the H 2 WO 4 /GO composites were reduced to WO 3 NDs/RGO via a hydrothermal reduction process. The UV photodetector showed a fast transient response and high responsivity, which are attributed to the improved carrier transport and collection efficiency through graphene. The excellent material properties of the WO 3 NDs/RGO composite demonstrated in this work may open up new possibilities for using WO 3 NDs/RGO for future optoelectronic applications. (paper)

Zero-biased solar-blind photodetector based on ZnBeMgO/Si heterojunction

International Nuclear Information System (INIS)

Yang, C; Li, X M; Yu, W D; Gao, X D; Cao, X; Li, Y Z

2009-01-01

An n-type Zn 1-x-y Be x Mg y O thin film was deposited on a p-type Si substrate by pulsed laser deposition to obtain a solar-blind photodetector. The spectral response characteristic with a cutoff wavelength of 280 nm was demonstrated to realize the photodetection of the solar-blind wave zone. The responsivity of the device was improved by inserting an Al-doped ZnO (AZO) contact layer, which was expected to enhance the carrier collection efficiency significantly. Correspondingly, the peak responsivity was improved from 0.003 to 0.11 A W -1 at zero bias, and a high external quantum efficiency of 53% at 270 nm was achieved. The fast rise time reached 20 ns. This work demonstrated the possibility of a wurtzite ZnO based oxide system to realize high performance zero-biased solar-blind photodetectors. (fast track communication)

Alpha- and gamma-detection by the avalanche detectors with metal-resistor-semiconductor structure

International Nuclear Information System (INIS)

Vetokhin, S.S.; Evtushenko, V.P.; Zalesskij, V.B.; Malyshev, S.A.; Chudakov, V.A.; Shunevich, S.A.

1992-01-01

Possibility to use silicon avalanche photodetectors with metal-resistor-semiconductor structure with 0.12 cm 2 photosensitive area as detectors of α-particles, as well as, photodetector of γ-quanta scintillation detector is shown. When detection of α-particles the energy resolution reaches 10%. R energy resolution for avalanche photodetector-CsI(Tl) scintillator system cooled up to - 60 deg C at 59 keV ( 241 Am) and 662 keV ( 137 Cs) energy of γ-quanta constitutes 60% and 80%, respectively. R minimal value in the conducted experiments is determined by the degree of irregularity of avalanche amplification along the photodetector area

Inkjet-printed transparent nanowire thin film features for UV photodetectors

KAUST Repository

Chen, Shih Pin

2015-01-01

In this study, a simple and effective direct printing method was developed to print patterned nanowire thin films for UV detection. Inks containing silver or titanium dioxide (TiO2) nanowires were first formulated adequately to form stable suspension for inkjet printing applications. Sedimentation tests were also carried out to characterize the terminal velocity and dispersion stability of nanowires to avoid potential nozzle clogging problems. The well-dispersed silver nanowire ink was then inkjet printed on PET films to form patterned electrodes. Above the electrodes, another layer of TiO2 nanowires was also printed to create a highly transparent photodetector with >80% visible transmittance. The printed photodetector showed a fairly low dark current of 10-12-10-14 A with a high on/off ratio of 2000 to UV radiation. Under a bias voltage of 2 V, the detector showed fast responses to UV illumination with a rise time of 0.4 s and a recovery time of 0.1 s. More photo currents can also be collected with a larger printed electrode area. In summary, this study shows the feasibility of applying inkjet printing technology to create nanowire thin films with specific patterns, and can be further employed for photoelectric applications. © The Royal Society of Chemistry 2015.

Electrical circuit model of ITO/AZO/Ge photodetector.

Science.gov (United States)

Patel, Malkeshkumar; Kim, Joondong

2017-10-01

In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R-C circuit model using the impedance spectroscopy.

Performance of a monolithic LaBr{sub 3}:Ce crystal coupled to an array of silicon photomultipliers

Energy Technology Data Exchange (ETDEWEB)

Ulyanov, Alexei, E-mail: alexey.uliyanov@ucd.ie [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Morris, Oran [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Department of Computer Science & Applied Physics, Galway-Mayo Institute of Technology, Galway (Ireland); Hanlon, Lorraine; McBreen, Sheila; Foley, Suzanne; Roberts, Oliver J.; Tobin, Isaac; Murphy, David; Wade, Colin [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Nelms, Nick; Shortt, Brian [European Space Agency, ESTEC, 2200 AG Noordwijk (Netherlands); Slavicek, Tomas; Granja, Carlos; Solar, Michael [Institute of Experimental and Applied Physics, Czech Technical University in Prague, 12800 Prague 2 (Czech Republic)

2016-02-21

A gamma-ray detector composed of a single 28×28×20 mm{sup 3} LaBr{sub 3}:Ce crystal coupled to a custom built 4×4 array of silicon photomultipliers was tested over an energy range of 30 keV to 9.3 MeV. The silicon photomultipliers were initially calibrated using 20 ns light pulses generated by a light emitting diode. The photodetector responses measured as a function of the number of incident photons were found to be non-linear and consistent with model predictions. Using corrections for the non-linearity of the silicon photomultipliers, the detector showed a linear response to gamma-rays with energies from 100 keV to the maximum available energy of 9.3 MeV. The energy resolution was found to be 4% FWHM at 662 keV. Despite the large thickness of the scintillator (20 mm) and a 5 mm thick optical window, the detector was capable of measuring the positions of the gamma-ray interaction points. The position resolution was measured at 356 keV and was found to be 8 mm FWHM in the detector plane and 11 mm FWHM for the depth of interaction. The detector can be used as a building block of a larger calorimeter system that is capable of measuring gamma-ray energies up to tens of MeV.

Operator mixing in the ɛ -expansion: Scheme and evanescent-operator independence

Science.gov (United States)

Di Pietro, Lorenzo; Stamou, Emmanuel

2018-03-01

We consider theories with fermionic degrees of freedom that have a fixed point of Wilson-Fisher type in noninteger dimension d =4 -2 ɛ . Due to the presence of evanescent operators, i.e., operators that vanish in integer dimensions, these theories contain families of infinitely many operators that can mix with each other under renormalization. We clarify the dependence of the corresponding anomalous-dimension matrix on the choice of renormalization scheme beyond leading order in ɛ -expansion. In standard choices of scheme, we find that eigenvalues at the fixed point cannot be extracted from a finite-dimensional block. We illustrate in examples a truncation approach to compute the eigenvalues. These are observable scaling dimensions, and, indeed, we find that the dependence on the choice of scheme cancels. As an application, we obtain the IR scaling dimension of four-fermion operators in QED in d =4 -2 ɛ at order O (ɛ2).

Ultra-wide frequency response measurement of an optical system with a DC photo-detector

KAUST Repository

Kuntz, Katanya B.

2017-01-09

Precise knowledge of an optical device\\'s frequency response is crucial for it to be useful in most applications. Traditional methods for determining the frequency response of an optical system (e.g. optical cavity or waveguide modulator) usually rely on calibrated broadband photo-detectors or complicated RF mixdown operations. As the bandwidths of these devices continue to increase, there is a growing need for a characterization method that does not have bandwidth limitations, or require a previously calibrated device. We demonstrate a new calibration technique on an optical system (consisting of an optical cavity and a high-speed waveguide modulator) that is free from limitations imposed by detector bandwidth, and does not require a calibrated photo-detector or modulator. We use a low-frequency (DC) photo-detector to monitor the cavity\\'s optical response as a function of modulation frequency, which is also used to determine the modulator\\'s frequency response. Knowledge of the frequency-dependent modulation depth allows us to more precisely determine the cavity\\'s characteristics (free spectral range and linewidth). The precision and repeatability of our technique is demonstrated by measuring the different resonant frequencies of orthogonal polarization cavity modes caused by the presence of a non-linear crystal. Once the modulator has been characterized using this simple method, the frequency response of any passive optical element can be determined to a fine resolution (e.g. kilohertz) over several gigahertz.

Graphene/black phosphorus heterostructured photodetector

Science.gov (United States)

Xu, Jiao; Song, Young Jae; Park, Jin-Hong; Lee, Sungjoo

2018-06-01

Graphene photodetectors exhibit a low photoresponsivity due to their weak light absorbance. In this study, we fabricated a graphene/black phosphorus (BP) heterostructure, in which the multilayer BP flake with a ∼0.3 eV direct band gap functions as an enhanced light-absorption material. Further, the photoexcited electrons are trapped in the trap states of the BP, which creates a photogating effect and causes holes to flow into the graphene layer driven by the built-in potential between BP and graphene. The photocarrier lifetime is therefore prolonged by trapping, and as a result of the high carrier mobility of graphene, the holes that transfer into the graphene channel can travel through the circuit before they recombine with trapped electrons. These combined effects result in a high photoresponsivity: 55.75 A/W at λ = 655 nm, 1.82 A/W at λ = 785 nm, and 0.66 A/W at λ = 980 nm.

Solvent-induced crystallization for hybrid perovskite thin-film photodetector with high-performance and low working voltage

International Nuclear Information System (INIS)

Hu, Wei; Yang, Shuzhen; Fan, Peng; Pan, Anlian; Wu, Runsheng; Yang, Junliang

2017-01-01

Organometal trihalide perovskites have emerged as a class of solution-processed semiconductors exhibiting remarkable optoelectronic properties. Using a high-quality perovskite thin film prepared by solvent-induced crystallization method and adopting a novel device configuration based on photon recycling effect, a perovskite thin-film photodetector has been constructed with the highest external quantum efficiency of 4.1  ×  10 4 % and responsivity of 219 A W −1 at a low bias of 1 V so far. The device working mechanism was further disclosed based on energy band bending model. The high-performance and low working-voltage perovskite thin-film photodetector will find potential applications in photodetection and optoelectronic integrated circuits. (paper)

Enhanced Response Speed of ZnO Nanowire Photodetector by Coating with Photoresist

Directory of Open Access Journals (Sweden)

Xing Yang

2016-01-01

Full Text Available Spin-coating photoresist film on ZnO nanowire (NW was introduced into the fabrication procedure to improve photoresponse and recovery speed of a ZnO NW ultraviolet photoelectric detector. A ZnO NW was first assembled on prefabricated electrodes by dielectrophoresis. Then, photoresist was spin-coated on the nanowire. Finally, a metal layer was electrodeposited on the nanowire-electrode contacts. The response properties and I-V characteristics of ZnO NW photodetector were investigated by measuring the electrical current under different conditions. Measurement results demonstrated that the detector has an enhanced photoresponse and recovery speed after coating the nanowire with photoresist. The photoresponse and recovery characteristics of detectors with and without spin-coating were compared to demonstrate the effects of photoresist and the enhancement of response and recovery speed of the photodetector is ascribed to the reduced surface absorbed oxygen molecules and binding effect on the residual oxygen molecules after photoresist spin-coating. The results demonstrated that surface coating may be an effective and simple way to improve the response speed of the photoelectric device.

Design and fabrication of prototype 6×6 cm2 microchannel plate photodetector with bialkali photocathode for fast timing applications

International Nuclear Information System (INIS)

Xie, Junqi; Byrum, Karen; Demarteau, Marcel; Gregar, Joseph; May, Edward; Virgo, Mathew; Wagner, Robert; Walters, Dean; Wang, Jingbo; Xia, Lei; Zhao, Huyue

2015-01-01

Planar microchannel plate-based photodetectors with a bialkali photocathode are able to achieve photon detection with very good time and position resolution. A 6×6 cm 2 photodetector production facility was designed and built at Argonne National Laboratory. Small form-factor MCP-based photodetectors completely constructed out of glass were designed and prototypes were successfully fabricated. Knudsen effusion cells were incorporated in the photocathode growth chamber to achieve uniform and high quantum efficiency photocathodes. The thin film uniformity was simulated and measured for an antimony film deposition, showing uniformity of better than 10%. Several prototype devices with bialkali photocathodes have been fabricated with the described system and their characteristics were evaluated in the large signal (multi-PE) limit. A typical prototype device exhibits time-of-flight resolution of ~27 psec and differential time resolution of ~9 psec, corresponding to spatial resolution of ~0.65 mm

Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si

International Nuclear Information System (INIS)

Zhang, T. C.; Guo, Y.; Mei, Z. X.; Gu, C. Z.; Du, X. L.

2009-01-01

Exploiting a double heterojunction of n-ZnO/insulator-MgO/p-Si grown by molecular beam epitaxy, a visible-blind ultraviolet (UV) photodetector has been fabricated. The photodetector shows a rectification ratio of ∼10 4 at ±2 V and a dark current of 0.5 nA at a reverse bias of -2 V.The photoresponse spectrum indicates a visible-blind UV detectivity of our devices with a sharp cut off at the wavelength of 378 nm and a high UV/visible rejection ratio. The key role of the middle insulating MgO layer, as a barrier layer for minority carrier transport, has been demonstrated

Development of plenoptic infrared camera using low dimensional material based photodetectors

Science.gov (United States)

Chen, Liangliang

Infrared (IR) sensor has extended imaging from submicron visible spectrum to tens of microns wavelength, which has been widely used for military and civilian application. The conventional bulk semiconductor materials based IR cameras suffer from low frame rate, low resolution, temperature dependent and highly cost, while the unusual Carbon Nanotube (CNT), low dimensional material based nanotechnology has been made much progress in research and industry. The unique properties of CNT lead to investigate CNT based IR photodetectors and imaging system, resolving the sensitivity, speed and cooling difficulties in state of the art IR imagings. The reliability and stability is critical to the transition from nano science to nano engineering especially for infrared sensing. It is not only for the fundamental understanding of CNT photoresponse induced processes, but also for the development of a novel infrared sensitive material with unique optical and electrical features. In the proposed research, the sandwich-structured sensor was fabricated within two polymer layers. The substrate polyimide provided sensor with isolation to background noise, and top parylene packing blocked humid environmental factors. At the same time, the fabrication process was optimized by real time electrical detection dielectrophoresis and multiple annealing to improve fabrication yield and sensor performance. The nanoscale infrared photodetector was characterized by digital microscopy and precise linear stage in order for fully understanding it. Besides, the low noise, high gain readout system was designed together with CNT photodetector to make the nano sensor IR camera available. To explore more of infrared light, we employ compressive sensing algorithm into light field sampling, 3-D camera and compressive video sensing. The redundant of whole light field, including angular images for light field, binocular images for 3-D camera and temporal information of video streams, are extracted and

Fast and Sensitive Solution-Processed Visible-Blind Perovskite UV Photodetectors.

Science.gov (United States)

Adinolfi, Valerio; Ouellette, Olivier; Saidaminov, Makhsud I; Walters, Grant; Abdelhady, Ahmed L; Bakr, Osman M; Sargent, Edward H

2016-09-01

The first visible-blind UV photodetector based on MAPbCl3 integrated on a substrate exhibits excellent performance, with responsivities reaching 18 A W(-1) below 400 nm and imaging-compatible response times of 1 ms. This is achieved by using substrate-integrated single crystals, thus overcoming the severe limitations affecting thin films and offering a new application of efficient, solution-processed, visible-transparent perovskite optoelectronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Viability study of photodiodes utilization in determination of soil water content by gamma transmission

International Nuclear Information System (INIS)

Santos, L.A.P.; Khoury, H.; Carneiro, C.J.G.

1991-01-01

An experiment to verify the viability of using silicon photodetectors in a sup(241)Am γ-ray spectroscopy system for measuring soil water content was carried out in disturbed soil cores. The good correlation between the logarithm of the attenuation factor and the water content, r sup(2)=0.99, proves that the low efficiency of these detectors is not a limiting factor in measuring the water content. Furthermore, the small dimensions of the silicon photodetectors and associate electronic equipment are important characteristics that could permit the construction of a portable gammametry system to be used under field conditions. (author)

Highly polarization sensitive photodetectors based on quasi-1D titanium trisulfide (TiS3)

Science.gov (United States)

Liu, Sijie; Xiao, Wenbo; Zhong, Mianzeng; Pan, Longfei; Wang, Xiaoting; Deng, Hui-Xiong; Liu, Jian; Li, Jingbo; Wei, Zhongming

2018-05-01

Photodetectors with high polarization sensitivity are in great demand in advanced optical communication. Here, we demonstrate that photodetectors based on titanium trisulfide (TiS3) are extremely sensitive to polarized light (from visible to the infrared), due to its reduced in-plane structural symmetry. By density functional theory calculation, TiS3 has a direct bandgap of 1.13 eV. The highest photoresponsivity reaches 2500 A W-1. What is more, in-plane optical selection caused by strong anisotropy leads to the photoresponsivity ratio for different directions of polarization that can reach 4:1. The angle-dependent photocurrents of TiS3 clearly display strong linear dichroism. Moreover, the Raman peak at 370 cm-1 is also very sensitive to the polarization direction. The theoretical optical absorption of TiS3 is calculated by using the HSE06 hybrid functional method, in qualitative agreement with the observed experimental photoresponsivity.

Quantum Well Infrared Photodetectors Physics and Applications

CERN Document Server

Schneider, Harald

2007-01-01

Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.

Electrical circuit model of ITO/AZO/Ge photodetector

Directory of Open Access Journals (Sweden)

Malkeshkumar Patel

2017-10-01

Full Text Available In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007 (Yun et al., 2016 [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015 [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy.

Multiple evanescent white dot syndrome associated with retinal vasculitis

Directory of Open Access Journals (Sweden)

Takahashi A

2015-09-01

Full Text Available Akihiro Takahashi, Wataru Saito, Yuki Hashimoto, Susumu Ishida Department of Ophthalmology, Hokkaido University Graduate School of Medicine, Sapporo, Japan Purpose: A recent study revealed thickening of the inner retinal layers in acute stage of multiple evanescent white dot syndrome (MEWDS; however, the pathogenesis is still unknown. We report two cases with MEWDS whose funduscopy showed obvious retinal vasculitis. Methods: Case reports. Results: Healthy myopic 16- and 27-year-old women were the cases under study. In both cases, funduscopic examination revealed multiple, faint, small, subretinal white dots at the posterior pole to the midperiphery and macular granularity oculus dexter. Retinal vascular sheathing was also observed at midperiphery. Late-phase fluorescein angiography revealed leakages corresponding to the vascular sheathing. Enhanced depth imaging optical coherence tomography revealed the discontinuity of the ellipsoid zone corresponding to the white dots and increased macular choroidal thickness. One month later, these white dots and retinal sheathing spontaneously resolved in both cases. Three months later, impairments of the outer retinal morphology and the visual acuity were restored. Conclusion: These results suggest that retinal vasculitis possibly plays a role in the pathogenesis of thickened inner retinal layers in acute stage of MEWDS. Keywords: enhanced depth imaging optical coherence tomography, choroidal thickness, inner retinal layer, retinal vascular sheathing

Silicon photomultipliers in AMIGA muon counters

Energy Technology Data Exchange (ETDEWEB)

Botti, Ana Martina [Institut fuer Kernphysik, Karlsruher Institut fuer Technologie (Germany); Instituto de Tecnologias en Deteccion y Astroparticulas (ITeDA) (Argentina); Collaboration: Pierre-Auger-Collaboration

2016-07-01

The project AMIGA (Auger Muons and Infill for the Ground Array) aims to extend the energy range at the Pierre Auger Observatory to observe cosmic rays of lower energies (down to ∝10{sup 17} eV) and to study the transition from extragalactic to galactic cosmic rays. AMIGA is compounded by an infill of surface detectors (employing Cherenkov radiation detection in water) and muon counters. The AMIGA muon counters consist of an array of buried modules composed of 64 scintillator bars, a multi-pixel Photo Multiplier Tube (PMT) and the corresponding electronic of acquisition which works along with the surface detector. Currently, ITeDA is evaluating the feasibility of replacing PMTs with silicon photomultipliers (SiPM) without performing any substantial modification in the digital readout nor in the mechanical design. I present calibration results of a prototype module associated to the surface detector Toune of the Pierre Auger Observatory using a SiPM Hamamatsu S1257-100C plugged to the standard AMIGA front-end electronics. In addition, a study concerning gain stability and temperature variation has also been performed and is reported. I finally discuss a comparison between traces measured by both photodetectors (PMT and SiPM) for modules associated to the surface detector Toune.

Photoresponsive properties of ultrathin silicon nanowires

International Nuclear Information System (INIS)

Tran, Duy P.; Macdonald, Thomas J.; Nann, Thomas; Thierry, Benjamin; Wolfrum, Bernhard; Stockmann, Regina; Offenhäusser, Andreas

2014-01-01

Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate the photoresponse properties of ultrathin SiNWs (20 nm) fabricated using a size-reduction method based on e-beam lithography and tetramethylammonium hydroxide wet-etching. The high-quality SiNWs were able to detect light from the UV to the visible range with excellent sensitivity (∼1 pW/array), good time response, and high photoresponsivity (R ∼ 2.5 × 10 4  A/W). Improvement of the ultrathin SiNWs' photoresponse has been observed in comparison to 40 nm counter-part nanowires. These properties are attributable to the predominance surface-effect due to the high surface-to-volume ratio of ultrathin SiNWs. Long-term measurements at different temperatures in both the forward and reverse bias directions demonstrated the stability and reliability of the fabricated device. By sensitizing the fabricated SiNW arrays with cadmium telluride quantum dots (QDs), hybrid QD SiNW devices displayed an improvement in photocurrent response under UV light, while preserving their performance in the visible light range. The fast, stable, and high photoresponse of these hybrid nanostructures is promising towards the development of optoelectronic and photovoltaic devices

Photoresponsive properties of ultrathin silicon nanowires

Energy Technology Data Exchange (ETDEWEB)

Tran, Duy P.; Macdonald, Thomas J.; Nann, Thomas; Thierry, Benjamin, E-mail: a.offenhaeusser@fz-juelich.de, E-mail: benjamin.thierry@unisa.edu.au [Ian Wark Research Institute, University of South Australia, Mawson Lakes Campus, MM Bldg., Mawson Lakes Blvd., Mawson Lakes, South Australia 5095 (Australia); Wolfrum, Bernhard; Stockmann, Regina; Offenhäusser, Andreas, E-mail: a.offenhaeusser@fz-juelich.de, E-mail: benjamin.thierry@unisa.edu.au [Peter Grünberg Institute, Forschungszentrum Jülich GmbH, 2.4v Bldg., Wilhelm-Johnen St., Jülich 52428 (Germany)

2014-12-08

Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate the photoresponse properties of ultrathin SiNWs (20 nm) fabricated using a size-reduction method based on e-beam lithography and tetramethylammonium hydroxide wet-etching. The high-quality SiNWs were able to detect light from the UV to the visible range with excellent sensitivity (∼1 pW/array), good time response, and high photoresponsivity (R ∼ 2.5 × 10{sup 4 }A/W). Improvement of the ultrathin SiNWs' photoresponse has been observed in comparison to 40 nm counter-part nanowires. These properties are attributable to the predominance surface-effect due to the high surface-to-volume ratio of ultrathin SiNWs. Long-term measurements at different temperatures in both the forward and reverse bias directions demonstrated the stability and reliability of the fabricated device. By sensitizing the fabricated SiNW arrays with cadmium telluride quantum dots (QDs), hybrid QD SiNW devices displayed an improvement in photocurrent response under UV light, while preserving their performance in the visible light range. The fast, stable, and high photoresponse of these hybrid nanostructures is promising towards the development of optoelectronic and photovoltaic devices.

Theoretical Analysis of Interferometer Wave Front Tilt and Fringe Radiant Flux on a Rectangular Photodetector

Directory of Open Access Journals (Sweden)

Franz Konstantin Fuss

2013-09-01

Full Text Available This paper is a theoretical analysis of mirror tilt in a Michelson interferometer and its effect on the radiant flux over the active area of a rectangular photodetector or image sensor pixel. It is relevant to sensor applications using homodyne interferometry where these opto-electronic devices are employed for partial fringe counting. Formulas are derived for radiant flux across the detector for variable location within the fringe pattern and with varying wave front angle. The results indicate that the flux is a damped sine function of the wave front angle, with a decay constant of the ratio of wavelength to detector width. The modulation amplitude of the dynamic fringe pattern reduces to zero at wave front angles that are an integer multiple of this ratio and the results show that the polarity of the radiant flux changes exclusively at these multiples. Varying tilt angle causes radiant flux oscillations under an envelope curve, the frequency of which is dependent on the location of the detector with the fringe pattern. It is also shown that a fringe count of zero can be obtained for specific photodetector locations and wave front angles where the combined effect of fringe contraction and fringe tilt can have equal and opposite effects. Fringe tilt as a result of a wave front angle of 0.05° can introduce a phase measurement difference of 16° between a photodetector/pixel located 20 mm and one located 100 mm from the optical origin.

Near-infrared responsive PbS-sensitized photovoltaic photodetectors fabricated by the spin-assisted successive ionic layer adsorption and reaction method

International Nuclear Information System (INIS)

Im, Sang Hyuk; Kim, Hi-jung; Seok, Sang Il

2011-01-01

A PbS-sensitized photovoltaic photodetector responsive to near-infrared (NIR) light was fabricated by depositing monolayered PbS nanoparticles on a mesoporous TiO 2 (mp-TiO 2 ) film via the spin-assisted successive ionic layer adsorption and reaction (SILAR) method. By adjusting the size and morphology of the PbS nanoparticles through repeated spin-assisted SILAR cycles, the PbS-sensitized photovoltaic photodetector achieved an external quantum efficiency of 9.3% at 1140 nm wavelength and could process signals up to 1 kHz.

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

Science.gov (United States)

Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

2014-06-01

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors

Science.gov (United States)

Wang, Jun; Guo, Jin; Xie, Feng; Wang, Guosheng; Wu, Haoran; Song, Man; Yi, Yuanyuan

2016-10-01

This paper presents the comparative analysis of influence of doping level and doping profile of the active region on zero bias photoresponse characteristics of GaN-based p-i-n ultraviolet (UV) photodetectors operating at front- and back-illuminated. A two dimensional physically-based computer simulation of GaN-based p-i-n UV photodetectors is presented. We implemented GaN material properties and physical models taken from the literature. It is shown that absorption layer doping profile has notable impacts on the photoresponse of the device. Especially, the effect of doping concentration and distribution of the absorption layer on photoresponse is discussed in detail. In the case of front illumination, comparative to uniform n-type doping, the device with n-type Gaussian doping profiles at absorption layer has higher responsivity. Comparative to front illumination, back illuminated detector with p-type doping profiles at absorption layer has higher maximum photoresponse, while the Gaussian doping profiles have a weaker ability to enhance the device responsivity. It is demonstrated that electric field distribution, mobility degradation, and recombinations are jointly responsible for the variance of photoresponse. Our work enriches the understanding and utilization of GaN based p-i-n UV photodetectors.

In-situ growth of AuNPs on WS2@U-bent optical fiber for evanescent wave absorption sensor

Science.gov (United States)

Zhang, Suzhen; Zhao, Yuefeng; Zhang, Chao; Jiang, Shouzhen; Yang, Cheng; Xiu, Xianwu; Li, Chonghui; Li, Zhen; Zhao, Xiaofei; Man, Baoyuan

2018-05-01

The sensitivity of the evanescent wave absorption sensor is always a hot topic which has been attracted researchers' discussion. It is still a challenge for developing the effective sensor to sensitively detect some biochemical molecules solution in a simple and low-cost way. In this paper, an evanescent wave absorption (EWA) sensor has been presented based on the U-bent multimode fiber coated with tungsten disulfide (WS2) film and in-situ growth of gold nanoparticles (AuNPs) for the detection of ethanol solution and sodium chloride (NaCl) solution. Benefitted from the effective light coupling produced between U-bent probe and AuNPs, we attained the optimal size of the AuNPs by changing the reaction time between WS2 and tetrachloroauric acid (HAuCl4). With the AuNPs/WS2@U-bent optical fiber, we discussed the behaviors of EWA sensor, such as sensitivity, reproducibility, fast response-recovery time and stability. The sensitivity (△A/△C) of the proposed AuNPs/WS2@U-bent optical fiber EWA sensor is 0.65 for the detection of the ethanol solution. Besides, the AuNPs/WS2@U-bent optical fiber EWA sensor exhibits high sensitivity in detection of the sodium chloride (NaCl), which can reach 1.5 when the proposed sensor was immersed into NaCl solution. Our work demonstrates that the U-bent optical fiber EWA sensor may have promising applications in testing the solution of concentration.

Love Wave Ultraviolet Photodetector Fabricated on a TiO2/ST-Cut Quartz Structure

Directory of Open Access Journals (Sweden)

Walter Water

2014-01-01

Full Text Available A TiO2 thin film deposited on a 90° rotated 42°45′ ST-cut quartz substrate was applied to fabricate a Love wave ultraviolet photodetector. TiO2 thin films were grown by radio frequency magnetron sputtering. The crystalline structure and surface morphology of TiO2 thin films were examined using X-ray diffraction, scanning electron microscope, and atomic force microscope. The effect of TiO2 thin film thickness on the phase velocity, electromechanical coupling coefficient, temperature coefficient of frequency, and sensitivity of ultraviolet of devices was investigated. TiO2 thin film increases the electromechanical coupling coefficient but decreases the temperature coefficient of frequency for Love wave propagation on the 90° rotated 42°45′ ST-cut quartz. For Love wave ultraviolet photodetector application, the maximum insertion loss shift and phase shift are 2.81 dB and 3.55 degree at the 1.35-μm-thick TiO2 film.

Broad spectral response photodetector based on individual tin-doped CdS nanowire

Directory of Open Access Journals (Sweden)

Weichang Zhou

2014-12-01

Full Text Available High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD and TEM were used to examine the morphology, composition, phase structure and crystallinity of as-prepared samples. Raman spectrum was used to confirm tin doped into CdS effectively. The effect of impurity on the photoresponse properties of photodetectors made from these as-prepared pure and tin-doped CdS micro/nano-structures under excitation of light with different wavelength was investigated. Various photoconductive parameters such as responsivity, external quantum efficiency, response time and stability were analyzed to evaluate the advantage of doped nanowires and the feasibility for photodetector application. Comparison with pure CdS nanobelt, the tin-doped CdS nanowires response to broader spectral range while keep the excellect photoconductive parameters. Both trapped state induced by tin impurity and optical whispering gallery mode microcavity effect in the doped CdS nanowires contribute to the broader spectral response. The micro-photoluminescence was used to confirm the whispering gallery mode effect and deep trapped state in the doped CdS nanowires.

A Brief Technical History of the Large-Area Picosecond Photodetector (LAPPD) Collaboration

Energy Technology Data Exchange (ETDEWEB)

Adams, B.W.; et al.

2016-03-06

The Large Area Picosecond PhotoDetector (LAPPD) Collaboration was formed in 2009 to develop large-area photodetectors capable of time resolutions measured in pico-seconds, with accompanying sub-millimeter spatial resolution. During the next three and one-half years the Collaboration developed the LAPPD design of 20 x 20 cm modules with gains greater than $10^7$ and non-uniformity less than $15\\%$, time resolution less than 50 psec for single photons and spatial resolution of 700~microns in both lateral dimensions. We describe the R\\&D performed to develop large-area micro-channel plate glass substrates, resistive and secondary-emitting coatings, large-area bialkali photocathodes, and RF-capable hermetic packaging. In addition, the Collaboration developed the necessary electronics for large systems capable of precise timing, built up from a custom low-power 15-GigaSample/sec waveform sampling 6-channel integrated circuit and supported by a two-level modular data acquisition system based on Field-Programmable Gate Arrays for local control, data-sparcification, and triggering. We discuss the formation, organization, and technical successes and short-comings of the Collaboration. The Collaboration ended in December 2012 with a transition from R\\&D to commercialization.

Piezo-Phototronic Enhanced UV Sensing Based on a Nanowire Photodetector Array.

Science.gov (United States)

Han, Xun; Du, Weiming; Yu, Ruomeng; Pan, Caofeng; Wang, Zhong Lin

2015-12-22

A large array of Schottky UV photodetectors (PDs) based on vertical aligned ZnO nanowires is achieved. By introducing the piezo-phototronic effect, the performance of the PD array is enhanced up to seven times in photoreponsivity, six times in sensitivity, and 2.8 times in detection limit. The UV PD array may have applications in optoelectronic systems, adaptive optical computing, and communication. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Reusable split-aptamer-based biosensor for rapid detection of cocaine in serum by using an all-fiber evanescent wave optical biosensing platform.

Science.gov (United States)

Tang, Yunfei; Long, Feng; Gu, Chunmei; Wang, Cheng; Han, Shitong; He, Miao

2016-08-24

A rapid, facile, and sensitive assay of cocaine in biological fluids is important to prevent illegal abuse of drugs. A two-step structure-switching aptasensor has been developed for cocaine detection based on evanescent wave optical biosensing platform. In the proposed biosensing platform, two tailored aptamer probes were used to construct the molecular structure switching. In the existence of cocaine, two fragments of cocaine aptamer formed a three-way junction quickly, and the fluorophore group of one fragment was effectively quenched by the quencher group of the other one. The tail of the three-way junction hybridized with the cDNA sequences immobilized on the optical fiber biosensor. Fluorescence was excited by evanescent wave, and the fluorescence signal was proportional to cocaine concentration. Cocaine was detected in 450 s (300 s for incubation and 150 s for detection and regeneration) with a limit of detection (LOD) of 165.2 nM. The proposed aptasensor was evaluated in human serum samples, and it exhibited good recovery, precision, and accuracy without complicated sample pretreatments. Copyright © 2016 Elsevier B.V. All rights reserved.

High-Performance Red-Light Photodetector Based on Lead-Free Bismuth Halide Perovskite Film.

Science.gov (United States)

Tong, Xiao-Wei; Kong, Wei-Yu; Wang, You-Yi; Zhu, Jin-Miao; Luo, Lin-Bao; Wang, Zheng-Hua

2017-06-07

In this study, we developed a sensitive red-light photodetector (RLPD) based on CsBi 3 I 10 perovskite thin film. This inorganic, lead-free perovskite was fabricated by a simple spin-coating method. Device analysis reveals that the as-assembled RLPD was very sensitive to 650 nm light, with an on/off ratio as high as 10 5 . The responsivity and specific detectivity of the device were estimated to be 21.8 A/W and 1.93 × 10 13 Jones, respectively, which are much better than those of other lead halide perovskite devices. In addition, the device shows a fast response (rise time: 0.33 ms; fall time: 0.38 ms) and a high external quantum efficiency (4.13 × 10 3 %). It is also revealed that the RLPD has a very good device stability even after storage for 3 months under ambient conditions. In summary, we suggest that the CsBi 3 I 10 perovskite photodetector developed in this study may have potential applications in future optoelectronic systems.

An innovative silicon photomultiplier digitizing camera for gamma-ray astronomy

Energy Technology Data Exchange (ETDEWEB)

Heller, M. [DPNC-Universite de Geneve, Geneva (Switzerland); Schioppa, E. Jr; Porcelli, A.; Pujadas, I.T.; Della Volpe, D.; Montaruli, T.; Cadoux, F.; Favre, Y.; Christov, A.; Rameez, M.; Miranda, L.D.M. [DPNC-Universite de Geneve, Geneva (Switzerland); Zietara, K.; Idzkowski, B.; Jamrozy, M.; Ostrowski, M.; Stawarz, L.; Zagdanski, A. [Jagellonian University, Astronomical Observatory, Krakow (Poland); Aguilar, J.A. [DPNC-Universite de Geneve, Geneva (Switzerland); Universite Libre Bruxelles, Faculte des Sciences, Brussels (Belgium); Prandini, E.; Lyard, E.; Neronov, A.; Walter, R. [Universite de Geneve, Department of Astronomy, Geneva (Switzerland); Rajda, P.; Bilnik, W.; Kasperek, J.; Lalik, K.; Wiecek, M. [AGH University of Science and Technology, Krakow (Poland); Blocki, J.; Mach, E.; Michalowski, J.; Niemiec, J.; Skowron, K.; Stodulski, M. [Instytut Fizyki Jadrowej im. H. Niewodniczanskiego Polskiej Akademii Nauk, Krakow (Poland); Bogacz, L. [Jagiellonian University, Department of Information Technologies, Krakow (Poland); Borkowski, J.; Frankowski, A.; Janiak, M.; Moderski, R. [Polish Academy of Science, Nicolaus Copernicus Astronomical Center, Warsaw (Poland); Bulik, T.; Grudzinska, M. [University of Warsaw, Astronomical Observatory, Warsaw (Poland); Mandat, D.; Pech, M.; Schovanek, P. [Institute of Physics of the Czech Academy of Sciences, Prague (Czech Republic); Marszalek, A.; Stodulska, M. [Instytut Fizyki Jadrowej im. H. Niewodniczanskiego Polskiej Akademii Nauk, Krakow (Poland); Jagellonian University, Astronomical Observatory, Krakow (Poland); Pasko, P.; Seweryn, K. [Centrum Badan Kosmicznych Polskiej Akademii Nauk, Warsaw (Poland); Sliusar, V. [Universite de Geneve, Department of Astronomy, Geneva (Switzerland); Taras Shevchenko National University of Kyiv, Astronomical Observatory, Kyiv (Ukraine)

2017-01-15

The single-mirror small-size telescope (SST-1M) is one of the three proposed designs for the small-size telescopes (SSTs) of the Cherenkov Telescope Array (CTA) project. The SST-1M will be equipped with a 4 m-diameter segmented reflector dish and an innovative fully digital camera based on silicon photo-multipliers. Since the SST sub-array will consist of up to 70 telescopes, the challenge is not only to build telescopes with excellent performance, but also to design them so that their components can be commissioned, assembled and tested by industry. In this paper we review the basic steps that led to the design concepts for the SST-1M camera and the ongoing realization of the first prototype, with focus on the innovative solutions adopted for the photodetector plane and the readout and trigger parts of the camera. In addition, we report on results of laboratory measurements on real scale elements that validate the camera design and show that it is capable of matching the CTA requirements of operating up to high moonlight background conditions. (orig.)

Portable evanescent wave fiber biosensor for highly sensitive detection of Shigella

Science.gov (United States)

Xiao, Rui; Rong, Zhen; Long, Feng; Liu, Qiqi

2014-11-01

A portable evanescent wave fiber biosensor was developed to achieve the rapid and highly sensitive detection of Shigella. In this study, a DNA probe was covalently immobilized onto fiber-optic biosensors that can hybridize with a fluorescently labeled complementary DNA. The sensitivity of detection for synthesized oligonucleotides can reach 10-10 M. The surface of the sensor can be regenerated with 0.5% sodium dodecyl sulfate solution (pH 1.9) for over 30 times without significant deterioration of performance. The total analysis time for a single sample, including the time for measurement and surface regeneration, was less than 6 min. We employed real-time polymerase chain reaction (PCR) and compared the results of both methods to investigate the actual Shigella DNA detection capability of the fiber-optic biosensor. The fiber-optic biosensor could detect as low as 102 colony-forming unit/mL Shigella. This finding was comparable with that by real-time PCR, which suggests that this method is a potential alternative to existing detection methods.

Large photon drag effect of intrinsic graphene induced by plasmonic evanescent field

Science.gov (United States)

Luo, Ma; Li, Zhibing

2016-12-01

A large photon drag effect of the massless Dirac fermions in intrinsic graphene is predicted for a graphene-on-plasmonic-layer system. The surface plasmons in the plasmonic layer enlarge the wave number of the photon hundreds times more than in vacuum. The evanescent field of the surface plasmons generates a directional motion of carriers in the intrinsic graphene because of the large momentum transfer from the surface plasmon to the excited carriers. A model Hamiltonian is developed on the assumption that the in-plane wavelength of the surface plasmons is much smaller than the mean free path of the carriers. The time evolution of the density matrix is solved by perturbation method as well as numerical integration. The nondiagonal density matrix elements with momentum transfer lead to a gauge current, which is an optically driven macroscopic direct current. The dependence of the macroscopic direct current on the incident direction and intensity of the laser field is studied.

Near-infrared responsive PbS-sensitized photovoltaic photodetectors fabricated by the spin-assisted successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Im, Sang Hyuk; Kim, Hi-jung; Seok, Sang Il, E-mail: seoksi@krict.re.kr [KRICT-EPFL Global Research Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology, 19 Sinseongno, Yuseong, Daejeon 305-600 (Korea, Republic of)

2011-09-30

A PbS-sensitized photovoltaic photodetector responsive to near-infrared (NIR) light was fabricated by depositing monolayered PbS nanoparticles on a mesoporous TiO{sub 2} (mp-TiO{sub 2}) film via the spin-assisted successive ionic layer adsorption and reaction (SILAR) method. By adjusting the size and morphology of the PbS nanoparticles through repeated spin-assisted SILAR cycles, the PbS-sensitized photovoltaic photodetector achieved an external quantum efficiency of 9.3% at 1140 nm wavelength and could process signals up to 1 kHz.

Development of a 144-channel Hybrid Avalanche Photo-Detector for Belle II ring-imaging Cherenkov counter with an aerogel radiator

Energy Technology Data Exchange (ETDEWEB)

Nishida, S., E-mail: shohei.nishida@kek.jp [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Adachi, I. [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Hamada, N. [Toho University, Funabashi (Japan); Hara, K. [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Iijima, T. [Nagoya University, Nagoya (Japan); Iwata, S.; Kakuno, H. [Tokyo Metropolitan University, Hachioji (Japan); Kawai, H. [Chiba University, Chiba (Japan); Korpar, S.; Krizan, P. [Jozef Stefan Institute, Ljubljana (Slovenia); Ogawa, S. [Toho University, Funabashi (Japan); Pestotnik, R.; Ŝantelj, L.; Seljak, A. [Jozef Stefan Institute, Ljubljana (Slovenia); Sumiyoshi, T. [Tokyo Metropolitan University, Hachioji (Japan); Tabata, M. [Chiba University, Chiba (Japan); Tahirovic, E. [Jozef Stefan Institute, Ljubljana (Slovenia); Yoshida, K. [Tokyo Metropolitan University, Hachioji (Japan); Yusa, Y. [Niigata University, Niigata (Japan)

2015-07-01

The Belle II detector, a follow up of the very successful Belle experiment, is under construction at the SuperKEKB electron–positron collider at KEK in Japan. For the PID system in the forward region of the spectrometer, a proximity-focusing ring-imaging Cherenkov counter with an aerogel radiator is being developed. For the position sensitive photon sensor, a 144-channel Hybrid Avalanche Photo-Detector has been developed with Hamamatsu Photonics K.K. In this report, we describe the specification of the Hybrid Avalanche Photo-Detector and the status of the mass production.

Improved Saturation Performance in High Speed Waveguide Photodetectors at 1.3 ??sing an Asymmetric InA1GaAs/InGaAsP Structure

Science.gov (United States)

Vang, T. A.; Davis, L.; Keo, S.; Forouhar, S. F.

1996-01-01

Waveguide photodetector (WGPD) results have recently been presented demonstrating the very large bandwidth-efficiency product potential of these devices. Improved saturation and linearity characteristics are realized in waveguide p-i-n photodetectors at 1.3 ??y using an asymmetric cladding structure with InA1GaAs/InGaAsP in the anode and InGaAsP in the cathode.

Smart photodetector arrays for error control in page-oriented optical memory

Science.gov (United States)

Schaffer, Maureen Elizabeth

1998-12-01

Page-oriented optical memories (POMs) have been proposed to meet high speed, high capacity storage requirements for input/output intensive computer applications. This technology offers the capability for storage and retrieval of optical data in two-dimensional pages resulting in high throughput data rates. Since currently measured raw bit error rates for these systems fall several orders of magnitude short of industry requirements for binary data storage, powerful error control codes must be adopted. These codes must be designed to take advantage of the two-dimensional memory output. In addition, POMs require an optoelectronic interface to transfer the optical data pages to one or more electronic host systems. Conventional charge coupled device (CCD) arrays can receive optical data in parallel, but the relatively slow serial electronic output of these devices creates a system bottleneck thereby eliminating the POM advantage of high transfer rates. Also, CCD arrays are "unintelligent" interfaces in that they offer little data processing capabilities. The optical data page can be received by two-dimensional arrays of "smart" photo-detector elements that replace conventional CCD arrays. These smart photodetector arrays (SPAs) can perform fast parallel data decoding and error control, thereby providing an efficient optoelectronic interface between the memory and the electronic computer. This approach optimizes the computer memory system by combining the massive parallelism and high speed of optics with the diverse functionality, low cost, and local interconnection efficiency of electronics. In this dissertation we examine the design of smart photodetector arrays for use as the optoelectronic interface for page-oriented optical memory. We review options and technologies for SPA fabrication, develop SPA requirements, and determine SPA scalability constraints with respect to pixel complexity, electrical power dissipation, and optical power limits. Next, we examine data

InN Quantum Dot Based Infra-Red Photodetectors.

Science.gov (United States)

Shetty, Arjun; Kumar, Mahesh; Roull, Basanta; Vinoy, K J; Krupanidhj, S B

2016-01-01

Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithog- raphy steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

An integrated optic ethanol vapor sensor based on a silicon-on-insulator microring resonator coated with a porous ZnO film.

Science.gov (United States)

Yebo, Nebiyu A; Lommens, Petra; Hens, Zeger; Baets, Roel

2010-05-24

Optical structures fabricated on silicon-on-insulator technology provide a convenient platform for the implementation of highly compact, versatile and low cost devices. In this work, we demonstrate the promise of this technology for integrated low power and low cost optical gas sensing. A room temperature ethanol vapor sensor is demonstrated using a ZnO nanoparticle film as a coating on an SOI micro-ring resonator of 5 microm in radius. The local coating on the ring resonators is prepared from colloidal suspensions of ZnO nanoparticles of around 3 nm diameter. The porous nature of the coating provides a large surface area for gas adsorption. The ZnO refractive index change upon vapor adsorption shifts the microring resonance through evanescent field interaction. Ethanol vapor concentrations down to 100 ppm are detected with this sensing configuration and a detection limit below 25 ppm is estimated.

Design of a photodetector unit of a new Shashlyk EM calorimeter for COMPASS II

International Nuclear Information System (INIS)

Chirikov-Zorin, I.; Krumshtein, Z.; Olchevski, A.

2015-01-01

A nine-channel photodetector unit with micropixel avalanche photodiodes (MAPD) and precision thermostabilization based on the compact Peltier module was designed and constructed. MAPD-3N with a high pixel density of 1.5·10 4 mm -2 and area 3x3 mm produced by Zecotek were used.

Solid-state photo-detectors for both CT and PET applications

CERN Document Server

Moraes, Danielle; Jarron, Pierre

2007-01-01

New semiconductor detectors have recently gained a lot of attention for medical applications in general. Advances in CdZnTe-detector arrays might improve both energy resolution and spatial resolution of clinical X-ray systems. Alternative system designs based on TFA technology combining photo-detector arrays with CMOS electronics open a possibility for compact imaging cameras. This scenario allows for the use of alternative materials such as a-Si:H and HgI2 that can be applied alone or integrated with scintillators. Results obtained with such materials are presented.

Evanescent Properties of Optical Diffraction from 2-Dimensional Hexagonal Photonic Crystals and Their Sensor Applications.

Science.gov (United States)

Liao, Yu-Yang; Chen, Yung-Tsan; Chen, Chien-Chun; Huang, Jian-Jang

2018-04-03

The sensitivity of traditional diffraction grating sensors is limited by the spatial resolution of the measurement setup. Thus, a large space is required to improve sensor performance. Here, we demonstrate a compact hexagonal photonic crystal (PhC) optical sensor with high sensitivity. PhCs are able to diffract optical beams to various angles in azimuthal space. The critical wavelength that satisfies the phase matching or becomes evanescent was used to benchmark the refractive index of a target analyte applied on a PhC sensor. Using a glucose solution as an example, our sensor demonstrated very high sensitivity and a low limit of detection. This shows that the diffraction mechanism of hexagonal photonic crystals can be used for sensors when compact size is a concern.

Low Dark-Current, High Current-Gain of PVK/ZnO Nanoparticles Composite-Based UV Photodetector by PN-Heterojunction Control.

Science.gov (United States)

Lee, Sang-Won; Cha, Seung-Hwan; Choi, Kyung-Jae; Kang, Byoung-Ho; Lee, Jae-Sung; Kim, Sae-Wan; Kim, Ju-Seong; Jeong, Hyun-Min; Gopalan, Sai-Anand; Kwon, Dae-Hyuk; Kang, Shin-Won

2016-01-07

We propose a solution-processable ultraviolet (UV) photodetector with a pn-heterojunction hybrid photoactive layer (HPL) that is composed of poly-n-vinylcarbazole (PVK) as a p-type polymer and ZnO nanoparticles (NPs) as an n-type metal oxide. To observe the effective photo-inducing ability of the UV photodetector, we analyzed the optical and electrical properties of HPL which is controlled by the doping concentration of n-type ZnO NPs in PVK matrix. Additionally, we confirmed that the optical properties of HPL dominantly depend on the ZnO NPs from the UV-vis absorption and the photoluminescence (PL) spectral measurements. This HPL can induce efficient charge transfer in the localized narrow pn-heterojunction domain and increases the photocurrent gain. It is essential that proper doping concentration of n-type ZnO NPs in polymer matrix is obtained to improve the performance of the UV photodetector. When the ZnO NPs are doped with the optimized concentration of 3.4 wt.%, the electrical properties of the photocurrent are significantly increased. The ratio of the photocurrent was approximately 10³ higher than that of the dark current.

Low Dark-Current, High Current-Gain of PVK/ZnO Nanoparticles Composite-Based UV Photodetector by PN-Heterojunction Control

Directory of Open Access Journals (Sweden)

Sang-Won Lee

2016-01-01

Full Text Available We propose a solution-processable ultraviolet (UV photodetector with a pn-heterojunction hybrid photoactive layer (HPL that is composed of poly-n-vinylcarbazole (PVK as a p-type polymer and ZnO nanoparticles (NPs as an n-type metal oxide. To observe the effective photo-inducing ability of the UV photodetector, we analyzed the optical and electrical properties of HPL which is controlled by the doping concentration of n-type ZnO NPs in PVK matrix. Additionally, we confirmed that the optical properties of HPL dominantly depend on the ZnO NPs from the UV-vis absorption and the photoluminescence (PL spectral measurements. This HPL can induce efficient charge transfer in the localized narrow pn-heterojunction domain and increases the photocurrent gain. It is essential that proper doping concentration of n-type ZnO NPs in polymer matrix is obtained to improve the performance of the UV photodetector. When the ZnO NPs are doped with the optimized concentration of 3.4 wt.%, the electrical properties of the photocurrent are significantly increased. The ratio of the photocurrent was approximately 103 higher than that of the dark current.

UV-Assisted Photochemical Synthesis of Reduced Graphene Oxide/ZnO Nanowires Composite for Photoresponse Enhancement in UV Photodetectors

Directory of Open Access Journals (Sweden)

Changsong Chen

2018-01-01

Full Text Available The weak photon absorption and high recombination rate of electron-hole pairs in disordered zinc oxide nanowires (ZNWs limit its application in UV photodetection. This limitation can be overcome by introducing graphene sheets to the ZNWs. Herein we report a high-performance photodetector based on one-dimensional (1D wide band-gap semiconductor disordered ZNWs composited with reduced graphene oxide (RGO for ultraviolet (UV photoresponse enhancement. The RGO/ZNWs composites have been successfully synthetized through UV-assisted photochemical reduction of GO in ZNWs suspension. The material characterizations in morphology, Raman scattering, and Ultraviolet-visible light absorption verified the formation of graphene sheets attached in ZNWs network and the enhancement of UV absorption due to the introduction of graphene. In comparison with photodetectors based on pure ZNWs, the photodetectors based on RGO/ZNWs composite exhibit enhanced photoresponse with photocurrent density of 5.87 mA·cm−2, on/off current ratio of 3.01 × 104, and responsivity of 1.83 A·W−1 when a UV irradiation of 3.26 mW·cm−2 and 1.0 V bias were used. Theory analysis is also presented to get insight into the inherent mechanisms of separation and transportation of photo-excited carriers in RGO/ZNWs composite.

UV-Assisted Photochemical Synthesis of Reduced Graphene Oxide/ZnO Nanowires Composite for Photoresponse Enhancement in UV Photodetectors.

Science.gov (United States)

Chen, Changsong; Zhou, Peng; Wang, Na; Ma, Yang; San, Haisheng

2018-01-05

The weak photon absorption and high recombination rate of electron-hole pairs in disordered zinc oxide nanowires (ZNWs) limit its application in UV photodetection. This limitation can be overcome by introducing graphene sheets to the ZNWs. Herein we report a high-performance photodetector based on one-dimensional (1D) wide band-gap semiconductor disordered ZNWs composited with reduced graphene oxide (RGO) for ultraviolet (UV) photoresponse enhancement. The RGO/ZNWs composites have been successfully synthetized through UV-assisted photochemical reduction of GO in ZNWs suspension. The material characterizations in morphology, Raman scattering, and Ultraviolet-visible light absorption verified the formation of graphene sheets attached in ZNWs network and the enhancement of UV absorption due to the introduction of graphene. In comparison with photodetectors based on pure ZNWs, the photodetectors based on RGO/ZNWs composite exhibit enhanced photoresponse with photocurrent density of 5.87 mA·cm -2 , on/off current ratio of 3.01 × 10⁴, and responsivity of 1.83 A·W -1 when a UV irradiation of 3.26 mW·cm -2 and 1.0 V bias were used. Theory analysis is also presented to get insight into the inherent mechanisms of separation and transportation of photo-excited carriers in RGO/ZNWs composite.

A fast and zero-biased photodetector based on GaTe-InSe vertical 2D p-n heterojunction

Science.gov (United States)

Feng, W.; Jin, Z.; Yuan, J.; Zhang, J.; Jia, S.; Dong, L.; Yoon, J.; Zhou, L.; Vajtai, R.; Tour, J. M.; Ajayan, P. M.; Hu, P.; Lou, J.

2018-04-01

p-n junctions serve as the building blocks for fundamental semiconductor devices, such as solar cells, light-emitting diodes (LEDs) and photodetectors. With recent studies unveiling the excellent optoelectronic properties of two-dimensional (2D) semiconductors, they are considered to be superb candidates for high performance p-n junctions. Here, we fabricate a vertical GaTe-InSe van der Waals (vdWs) p-n heterojunction by a PDMS-assisted transfer technique without etching. The fabricated p-n heterojunction shows gate-tunable current-rectifying behavior with a rectification factor reaching 1000. In addition, it features fast photodetection under zero bias as well as a high power conversion efficiency (PCE). Under 405 nm laser excitation, the zero-biased photodetector shows a high responsivity of 13.8 mA W-1 as well as a high external quantum efficiency (EQE) of 4.2%. Long-term stability is also observed and a response time of 20 µs is achieved due to stable and fast carrier transit through the built-in electric field in the depletion region. Fast and efficient charge separation in the vertical 2D p-n junction paves the way for developing 2D photodetectors with zero dark current, high speed and low power consumption.

A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector.

Science.gov (United States)

Lee, Myung-Jae; Youn, Jin-Sung; Park, Kang-Yeob; Choi, Woo-Young

2014-02-10

We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOS-compatible photodetectors. The receiver also has high-speed CMOS circuits including transimpedance amplifier, DC-balanced buffer, equalizer, and limiting amplifier. With the fabricated optical receiver, detection of 12.5-Gb/s optical data is successfully achieved at 5.8 pJ/bit. Our receiver achieves the highest data rate ever reported for 850-nm integrated CMOS optical receivers.

Long-wavelength germanium photodetectors by ion implantation

International Nuclear Information System (INIS)

Wu, I.C.; Beeman, J.W.; Luke, P.N.; Hansen, W.L.; Haller, E.E.

1990-11-01

Extrinsic far-infrared photoconductivity in thin high-purity germanium wafers implanted with multiple-energy boron ions has been investigated. Initial results from Fourier transform spectrometer(FTS) measurements have demonstrated that photodetectors fabricated from this material have an extended long-wavelength threshold near 192μm. Due to the high-purity substrate, the ability to block the hopping conduction in the implanted IR-active layer yields dark currents of less than 100 electrons/sec at temperatures below 1.3 K under an operating bias of up to 70 mV. Optimum peak responsivity and noise equivalent power (NEP) for these sensitive detectors are 0.9 A/W and 5 x 10 -16 W/Hz 1/2 at 99 μm, respectively. The dependence of the performance of devices on the residual donor concentration in the implanted layer will be discussed. 12 refs., 4 figs

Evaluation of different photodetector types for an ILC polarimeter

International Nuclear Information System (INIS)

Helebrant, Christian

2009-01-01

At the International Linear Collider (ILC) (ILC Reference Design Report, 2007 ) the polarization of the electron and positron beams needs to be measured with as yet unequaled precision of ΔP/P∼0.25%. The key element of the polarimeter will be the precise detection of Cherenkov light from Compton scattered electrons. The poster ) deals with the choice of a suitable photodetector (PD). In a recently assembled test facility various types of PDs have been checked. Results are presented with a special focus on the linearity of the device, since this is expected to be the limiting factor on the precision of the polarization measurement at the ILC.

Sub-10ps monolithic and low-power photodetector readout

International Nuclear Information System (INIS)

Varner, Gary S.; Ruckman, Larry L.

2009-01-01

Recent advances in photon detectors have resulted in high-density imaging arrays that offer many performance and cost advantages. In particular, the excellent transit time spread of certain devices show promise to provide tangible benefits in applications such as Positron Emission Tomography (PET). Meanwhile, high-density, high-performance readout techniques have not kept on pace for exploiting these developments. Photodetector readout for next generation high event rate particle identification and time-resolved PET requires a highly-integrated, low-power, and cost-effective readout technique. We propose fast waveform sampling as a method that meets these criteria and demonstrate that sub-10ps resolution can be obtained for an existing device

Sub-10ps monolithic and low-power photodetector readout

Energy Technology Data Exchange (ETDEWEB)

Varner, Gary S.; Ruckman, Larry L.

2009-02-20

Recent advances in photon detectors have resulted in high-density imaging arrays that offer many performance and cost advantages. In particular, the excellent transit time spread of certain devices show promise to provide tangible benefits in applications such as Positron Emission Tomography (PET). Meanwhile, high-density, high-performance readout techniques have not kept on pace for exploiting these developments. Photodetector readout for next generation high event rate particle identification and time-resolved PET requires a highly-integrated, low-power, and cost-effective readout technique. We propose fast waveform sampling as a method that meets these criteria and demonstrate that sub-10ps resolution can be obtained for an existing device.

A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

KAUST Repository

Flemban, Tahani H.

2017-09-19

Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W–1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Directory of Open Access Journals (Sweden)

Liwen Sang

2013-08-01

Full Text Available Ultraviolet (UV photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

Low-temperature processed ZnO and CdS photodetectors deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N; Moreno, S; Mejia, I; Quevedo-Lopez, M A

2014-01-01

UV-VIS photodetectors using an interdigital configuration, with zinc oxide (ZnO) and cadmium sulfide (CdS) semiconductors deposited by pulsed laser deposition, were fabricated with a maximum processing temperature of 100 °C. Without any further post-growth annealing, the photodetectors are compatible with flexible and transparent substrates. Aluminum (Al) and indium tin oxide (ITO) were investigated as contacts. Focusing on underwater communications, the impact of metal contact (ITO versus Al) was investigated to determine the maximum responsivity using a laser with a 405 nm wavelength. As expected, the responsivity increases for reduced metal finger separation. This is a consequence of reduced carrier transit time for shorter finger separation. For ITO, the highest responsivities for both films (ZnO and CdS) were ∼3 A W −1 at 5 V. On the other hand, for Al contacts, the maximum responsivities at 5 V were ∼0.1 A W −1 and 0.7 A W −1 for CdS and ZnO, respectively. (paper)

Au plasmon enhanced high performance β-Ga2O3 solar-blind photo-detector

Directory of Open Access Journals (Sweden)

Yuehua An

2016-02-01

Full Text Available Surface plasmon polariton (SPP is electro-magnetic wave coupled to free electron oscillations near the surface of metal, and has been used to improve the photoelectric properties in many optoelectronic devices. In the present study, the Au nanoparticles (NPs/β-Ga2O3 composite thin film was fabricated through depositing Au ultra-thin film on the β-Ga2O3 thin film followed by post-thermal treatment. Compared to bare β-Ga2O3 thin film, a significant absorption around 510 nm, which is attributed to SPP of Au NPs, was observed in the UV–vis spectrum of Au NPs/β-Ga2O3 composite thin film. The results showed that the photoresponse of Au NPs/Ga2O3 photodetector illuminated under 254 nm+532 nm light was much higher than that illuminated under 254 nm light, indicating an enhancement of photoelectric property for the solar-blind photodetector based on β-Ga2O3 thin film.

High-Performance solar-blind flexible Deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation

KAUST Repository

Mitra, Somak; Aravindh, Assa; Das, Gobind; Pak, Yusin; Ajia, Idris A.; Loganathan, Kalaivanan; Di Fabrizio, Enzo M.; Roqan, Iman S.

2018-01-01

-performance flexible DUV photodetectors operating at ambient conditions based on quantum dots (QDs) synthesized by femtosecond-laser ablation in liquid (FLAL) technique. Our method is facile without complex chemical procedures, which allows large-scale cost

Omnidirectional Harvesting of Weak Light Using a Graphene Quantum Dot-Modified Organic/Silicon Hybrid Device

KAUST Repository

Tsai, Meng-Lin; Tsai, Dung-Sheng; Tang, Libin; Chen, Lih-Juann; Lau, Shu Ping; He, Jr-Hau

2017-01-01

Despite great improvements in traditional inorganic photodetectors and photovoltaics, more progress is needed in the detection/collection of light at low-level conditions. Traditional photodetectors tend to suffer from high noise when operated

Photoelectron Spectroscopy of CdSe Nanocrystals in the Gas Phase: A Direct Measure of the Evanescent Electron Wave Function of Quantum Dots

Science.gov (United States)

2013-01-01

researchers have used ultrafast transient absorption spectros - copy to show that the charge separation rate of Type II core− shell QDs depends on the extent...the first direct measurement of the evanescent electron density of the QD exciton. We use ultrafast two-photon photoelectron spectros - copy (2PPE) to...clusters are well preserved after the aerosol system, as observed using UV − visible spectroscopy (Supporting Information Figure S1). The isolation of the

Air-stable, solution-processed oxide p-n heterojunction ultraviolet photodetector.

Science.gov (United States)

Kim, Do Young; Ryu, Jiho; Manders, Jesse; Lee, Jaewoong; So, Franky

2014-02-12

Air-stable solution processed all-inorganic p-n heterojunction ultraviolet photodetector is fabricated with a high gain (EQE, 25 300%). Solution-processed NiO and ZnO films are used as p-type and n-type ultraviolet sensitizing materials, respectively. The high gain in the detector is due to the interfacial trap-induced charge injection that occurs at the ITO/NiO interface by photogenerated holes trapped in the NiO film. The gain of the detector is controlled by the post-annealing temperature of the solution-processed NiO films, which are studied by X-ray photoelectron spectroscopy (XPS).

A Thermal-Electrically Cooled Quantum-Dot Middle-Wave Infrared Photodetector with High Quantum Efficiency and Photodetectivity, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Middle-wave infrared (LWIR, 3.2-3.6 m) photodetectors with a high specific photodetectivity (D*) are of great importance in NASA's lidar and remote sensing...

Long-wavelength photonic integrated circuits and avalanche photodetectors

Science.gov (United States)

Tsou, Yi-Jen D.; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volume require high data communication bandwidth over longer distances. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low-cost, high-speed laser modules at 1310 to 1550 nm wavelengths and avalanche photodetectors are required. The great success of GaAs 850nm VCSEls for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits (PICs), which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform of InP-based PICs compatible with surface-emitting laser technology, as well as a high data rate externally modulated laser module. Avalanche photodetectors (APDs) are the key component in the receiver to achieve high data rate over long transmission distance because of their high sensitivity and large gain- bandwidth product. We have used wafer fusion technology to achieve In

A fast position sensitive photodetector based on a CsI reflective photocathode

International Nuclear Information System (INIS)

Arnold, R.; Christophel, E.; Guyonnet, J.L.

1991-01-01

A fast detector was built for UV photon detection that depends on a CsI sensitized pad cathode. The rapidity of the detector is compared with that of a more classical chamber filled with photosensitive gases such as TEA or TMAE. Estimates of the quantum yield of the photocathode at 160 and 200 nm are given. The performances obtained make it a good photodetector candidate to be operated at high luminosity accelerators. (author) 7 refs., 19 figs

Ultraviolet photodetectors made from SnO2 nanowires

International Nuclear Information System (INIS)

Wu, Jyh-Ming; Kuo, Cheng-Hsiang

2009-01-01

SnO 2 nanowires can be synthesized on alumina substrates and formed into an ultraviolet (UV) photodetector. The photoelectric current of the SnO 2 nanowires exhibited a rapid photo-response as a UV lamp was switched on and off. The ratio of UV-exposed current to dark current has been investigated. The SnO 2 nanowires were synthesized by a vapor-liquid-solid process at a temperature of 900 o C. It was found that the nanowires were around 70-100 nm in diameter and several hundred microns in length. High-resolution transmission electron microscopy (HRTEM) image indicated that the nanowires grew along the [200] axis as a single crystallinity. Cathodoluminescence (CL), thin-film X-ray diffractometry, and X-ray photoelectron spectroscopy (XPS) were used to characterize the as-synthesized nanowires.

GaN/AlGaN-based UV photodetectors with performances exceeding the PMTS

OpenAIRE

Tut, Turgut

2008-01-01

Ankara : The Department of Physics and the Institute of Engineering and Science of Bilkent University, 2008. Thesis (Ph.D.) -- Bilkent University, 2008. Includes bibliographical references leaves 73-80. The recent developments in high Al-content AlxGa1−xN material growth technology made it possible to fabricate high performance solar-blind photodetectors operating in the ultraviolet (UV) spectral region with improved receiver sensitivity, low noise, low dark current density,...

Development of gamma spectrometer using silicon photomultiplier (SiPM)

International Nuclear Information System (INIS)

Kim, Chan Kyu

2011-02-01

Gamma spectroscopy is used to determine the identity and quantity of gamma-emitters in nuclear physics, geochemistry and astrophysics. The scintillation detectors are being used as a gamma spectrometer generally, because of their higher gamma-ray detection efficiency and cheaper price than germanium semi-conductor detectors. A typical scintillation detector is composed of a scintillator, a window, and a photodetector. The photomultiplier (PM) tube has been the most widely used as a photodetector because of its advantages like high sensitivity, high signal-to-noise ratio, and wide dynamic range. Recently, the Silicon Photomultiplier (SiPM) is being studied as a substitute of PM tube. The SiPM has almost same performance compared to PM tube but it has additional advantages; low operating voltage, small volume, and cheap production cost. In this research, the gamma spectrometer using SiPM instead of PM tube is developed. The use of SiPM as a photodetector makes the gamma spectrometer smaller, cheaper, easier to use. For photon transport and collection from the large area scintillator to the small area SiPM, a light guide is applied in this gamma spectrometer system. Before fabrication of light guide, DETECT simulation is performed to study and prospect characteristics of light guide structure. And actual light guides are fabricated on the basis of this simulation result. Poly(methyl methacrylate) (PMMA) is chosen as material of light guide, 5 sample light guides are fabricated in different lengths and coatings. As a scintillator crystal, same NaI(Tl) crystal is chosen. For measurement and analysis of gamma spectrometer system, 3 gamma spectrometer systems are composed: PM tube-based system, PM tube-based system with the light guide, SiPM-based system with the light guide. Through comparison between the results of each gamma spectrometer, the performances of gamma spectrometer system are analyzed by each component. Measurement results of the second system is well

Quantum-Well Infrared Photodetector (QWIP) Focal Plane Assembly

Science.gov (United States)

Jhabvala, Murzy; Jhabvala, Christine A.; Ewin, Audrey J.; Hess, Larry A.; Hartmann, Thomas M.; La, Anh T.

2012-01-01

A paper describes the Thermal Infrared Sensor (TIRS), a QWIP-based instrument intended to supplement the Operational Land Imager (OLI) for the Landsat Data Continuity Mission (LDCM). The TIRS instrument is a far-infrared imager operating in the pushbroom mode with two IR channels: 10.8 and 12 microns. The focal plane will contain three 640x512 QWIP arrays mounted on a silicon substrate. The silicon substrate is a custom-fabricated carrier board with a single layer of aluminum interconnects. The general fabrication process starts with a 4-in. (approx.10-cm) diameter silicon wafer. The wafer is oxidized, a single substrate contact is etched, and aluminum is deposited, patterned, and alloyed. This technology development is aimed at incorporating three large-format infrared detecting arrays based on GaAs QWIP technology onto a common focal plane with precision alignment of all three arrays. This focal plane must survive the rigors of flight qualification and operate at a temperature of 43 K (-230 C) for five years while orbiting the Earth. The challenges presented include ensuring thermal compatibility among all the components, designing and building a compact, somewhat modular system and ensuring alignment to very tight levels. The multi-array focal plane integrated onto a single silicon substrate is a new application of both QWIP array development and silicon wafer scale integration. The Invar-based assembly has been tested to ensure thermal reliability.

Low-Voltage High-Performance UV Photodetectors: An Interplay between Grain Boundaries and Debye Length.

Science.gov (United States)

Bo, Renheng; Nasiri, Noushin; Chen, Hongjun; Caputo, Domenico; Fu, Lan; Tricoli, Antonio

2017-01-25

Accurate detection of UV light by wearable low-power devices has many important applications including environmental monitoring, space to space communication, and defense. Here, we report the structural engineering of ultraporous ZnO nanoparticle networks for fabrication of very low-voltage high-performance UV photodetectors. A record high photo- to dark-current ratio of 3.3 × 10 5 and detectivity of 3.2 × 10 12 Jones at an ultralow operation bias of 2 mV and low UV-light intensity of 86 μW·cm -2 are achieved by controlling the interplay between grain boundaries and surface depletion depth of ZnO nanoscale semiconductors. An optimal window of structural properties is determined by varying the particle size of ultraporous nanoparticle networks from 10 to 42 nm. We find that small electron-depleted nanoparticles (≤40 nm) are necessary to minimize the dark-current; however, the rise in photocurrent is tampered with decreasing particle size due to the increasing density of grain boundaries. These findings reveal that nanoparticles with a size close to twice their Debye length are required for high photo- to dark-current ratio and detectivity, while further decreasing their size decreases the photodetector performance.

ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity

Science.gov (United States)

Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

2016-12-01

A ZnO quantum dot photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W-1 and detectivity of more than 1.02 × 1013 Jones (Jones = cm Hz1/2 W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W-1 to 1915 A W-1 and the detectivity is improved from 5.8 × 1012 to 1.0 × 1013 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

Ion implantation enhanced metal-Si-metal photodetectors

Science.gov (United States)

Sharma, A. K.; Scott, K. A. M.; Brueck, S. R. J.; Zolper, J. C.; Myers, D. R.

1994-05-01

The quantum efficiency and frequency response of simple Ni-Si-Ni metal-semiconductor-metal (MSM) photodetectors at long wavelengths are significantly enhanced with a simple, ion-implantation step to create a highly absorbing region approx. 1 micron below the Si surface. The internal quantum efficiency is improved by a factor of approx. 3 at 860 nm (to 64%) and a full factor of ten at 1.06 microns (to 23%) as compared with otherwise identical unimplanted devices. Dark currents are only slightly affected by the implantation process and are as low as 630 pA for a 4.5-micron gap device at 10-V bias. Dramatic improvement in the impulse response is observed, 100 ps vs. 600 ps, also at 10-V bias and 4.5-micron gap, due to the elimination of carrier diffusion tails in the implanted devices. Due to its planar structure, this device is fully VLSI compatible. Potential applications include optical interconnections for local area networks and multi-chip modules.

Ocean Color Underwater Low Light Advanced Radiometer—Ocean Color at Night

Data.gov (United States)

National Aeronautics and Space Administration — The OCULLAR activity pairs a miniature and ruggedized photomultiplier tube (PMT) with an existing commercial-off-the-shelf (COTS) silicon photodetector (SiP)...

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices

Science.gov (United States)

Penello, Germano Maioli; Pereira, Pedro Henrique; Pires, Mauricio Pamplona; Sivco, Deborah; Gmachl, Claire; Souza, Patricia Lustoza

2018-01-01

The concept of leaky electronic states in the continuum is used to achieve room temperature operation of photovoltaic superlattice infrared photodetectors. A structural asymmetric InGaAs/InAlAs potential profile is designed to create states in the continuum with the preferential direction for electron extraction and, consequently, to obtain photovoltaic operation at room temperature. Due to the photovoltaic operation and virtual increase in the bandoffset, the device presents both low dark current and low noise. The Johnson noise limited specific detectivity reaches values as high as 1.4 × 1011 Jones at 80 K. At 300 K, the detectivity obtained is 7.0 × 105 Jones.

The design of a photodetector unit of a new Shashlyk EM calorimeter for COMPASS II

Energy Technology Data Exchange (ETDEWEB)

Chirikov-Zorin, I., E-mail: chirikov@nusun.jinr.ru; Krumshtein, Z.; Olchevski, A.

2016-07-11

A nine-channel photodetector unit with micropixel avalanche photodiodes (MAPD) and precision thermostabilization based on the compact Peltier module is designed and constructed. MAPD-3N with a high pixel density of 15,000 per square mm and area 3×3 mm{sup 2} produced by Zecotek were used.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Packaging of photodetector modules for 100 Gbit/s applications using electromagnetic simulations

DEFF Research Database (Denmark)

Jiang, Chenhui; Krozer, Viktor; Bach, H.-G.

2009-01-01

In this paper we demonstrate ultra-broadband packaging and interconnection designs for photodetector (PD) modules for 100 Gbit/s data transmission applications. The design of packaging and interconnection structures is based on accurate and reliable 3D electromagnetic (EM) simulations. Mode...... conversion loss due to mode mismatch is identified as the dominant effect of limiting bandwidth of packaged modules. Finally, PD chips are successfully packaged by using wire-bonding technology and conventional coplanar waveguide (CPW) for avoiding mode mismatch. The new packaged PD module demonstrates...

Saturated evanescent-wave absorption of few-layer graphene-covered side-polished single-mode fiber for all-optical switching

Science.gov (United States)

Peng, Kaung-Jay; Wu, Chun-Lung; Lin, Yung-Hsiang; Wang, Hwai-Yung; Cheng, Chih-Hsien; Chi, Yu-Chieh; Lin, Gong-Ru

2018-01-01

Using the evanescent-wave saturation effect of hydrogen-free low-temperature synthesized few-layer graphene covered on the cladding region of a side-polished single-mode fiber, a blue pump/infrared probe-based all-optical switch is demonstrated with specific wavelength-dependent probe modulation efficiency. Under the illumination of a blue laser diode at 405 nm, the few-layer graphene exhibits cross-gain modulation at different wavelengths covering the C- and L-bands. At a probe power of 0.5 mW, the L-band switching throughput power variant of 16 μW results in a probe modulation depth of 3.2%. Blue shifting the probe wavelength from 1580 to 1520 nm further enlarges the switching throughput power variant to 24 mW and enhances the probe modulation depth to 5%. Enlarging the probe power from 0.5 to 1 mW further enlarges the switching throughput power variant from 25 to 58 μW to promote its probe modulation depth of up to 5.8% at 1520 nm. In contrast, the probe modulation depth degrades from 5.1% to 1.2% as the pumping power reduces from 85 to 24 mW, which is attributed to the saturable absorption of the few-layer graphene-based evanescent-wave absorber. The modulation depth at wavelength of 1550 nm under a probe power of 1 mW increases from 1.2% to 5.1%, as more carriers can be excited when increasing the blue laser power from 24 to 85 mW, whereas it decreases from 5.1% to 3.3% by increasing the input probe power from 1 to 2 mW to show an easier saturated condition at longer wavelength.

Radiative heat transfer exceeding the blackbody limit between macroscale planar surfaces separated by a nanosize vacuum gap

Science.gov (United States)

Bernardi, Michael P.; Milovich, Daniel; Francoeur, Mathieu

2016-09-01

Using Rytov's fluctuational electrodynamics framework, Polder and Van Hove predicted that radiative heat transfer between planar surfaces separated by a vacuum gap smaller than the thermal wavelength exceeds the blackbody limit due to tunnelling of evanescent modes. This finding has led to the conceptualization of systems capitalizing on evanescent modes such as thermophotovoltaic converters and thermal rectifiers. Their development is, however, limited by the lack of devices enabling radiative transfer between macroscale planar surfaces separated by a nanosize vacuum gap. Here we measure radiative heat transfer for large temperature differences (~120 K) using a custom-fabricated device in which the gap separating two 5 × 5 mm2 intrinsic silicon planar surfaces is modulated from 3,500 to 150 nm. A substantial enhancement over the blackbody limit by a factor of 8.4 is reported for a 150-nm-thick gap. Our device paves the way for the establishment of novel evanescent wave-based systems.

Laminar Natural Convection in Square Enclosure Under an Externally Evanescent Magnetic Field

International Nuclear Information System (INIS)

El Jery, Atef; Ben Brahim, Ammar; Magherbi, Mourad

2009-01-01

This paper numerically investigates the effect of an externally evanescent magnetic field on flow patterns and heat transfer of fluid in a square cavity. The horizontal walls of the enclosure are assumed to be insulated while the vertical walls are kept isothermal. A control volume finite element method is used to solve the conservation equations at Prandtl number of 0.71. The effect of constant Hartman number on Nusselt number was studied. Validation tests with existing data demonstrate the aptitude of the present method to produce accurate results. The effects of magnetic field inclination angle from 0 degree to 90 degree on streamlines distributions are shown for different values of Hartman number. For Grashof number equal to 10 5 , the values of relaxation time of the magnetic field are chosen, so that the Lorentz force acts only in the transient state of Nusselt number in natural convection. The Nusselt number was calculated for different values of the inverse relaxation time varying from 0 to + ∞. The magnitude and the number of oscillations of the Nusselt number were observed. It has been found that no oscillation was seen at relaxation time equal to 20

Largely Improved Near-Infrared Silicon-Photosensing by the Piezo-Phototronic Effect.

Science.gov (United States)

Dai, Yejing; Wang, Xingfu; Peng, Wenbo; Zou, Haiyang; Yu, Ruomeng; Ding, Yong; Wu, Changsheng; Wang, Zhong Lin

2017-07-25

Although silicon (Si) devices are the backbone of modern (opto-)electronics, infrared Si-photosensing suffers from low-efficiency due to its limitation in light-absorption. Here, we demonstrate a large improvement in the performance, equivalent to a 366-fold enhancement in photoresponsivity, of a Si-based near-infrared (NIR) photodetector (PD) by introducing the piezo-phototronic effect via a deposited CdS layer. By externally applying a -0.15‰ compressive strain to the heterojunction, carrier-dynamics modulation at the local junction can be induced by the piezoelectric polarization, and the photoresponsivity and detectivity of the PD exhibit an enhancement of two orders of magnitude, with the peak values up to 19.4 A/W and 1.8 × 10 12 cm Hz 1/2 /W, respectively. The obtained maximum responsivity is considerably larger than those of commercial Si and InGaAs PDs in the NIR waveband. Meanwhile, the rise time and fall time are reduced by 84.6% and 76.1% under the external compressive strain. This work provides a cost-effective approach to achieve high-performance NIR photosensing by the piezo-phototronic effect for high-integration Si-based optoelectronic systems.

ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity.

Science.gov (United States)

Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

2016-12-02

A ZnO quantum dot  photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W -1 and detectivity of more than 1.02 × 10 13 Jones (Jones = cm Hz 1/2 W -1 ) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W -1 to 1915 A W -1 and the detectivity is improved from 5.8 × 10 12 to 1.0 × 10 13 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

High-performance broadband photodetector using solution-processible PbSe-TiO(2)-graphene hybrids.

Science.gov (United States)

Manga, Kiran Kumar; Wang, Junzhong; Lin, Ming; Zhang, Jie; Nesladek, Milos; Nalla, Venkatram; Ji, Wei; Loh, Kian Ping

2012-04-03

Highly sensitive, multicomponent broadband photodetector devices are made from PbSe/graphene/TiO(2). TiO(2) and PbSe nanoparticles act as light harvesting photoactive materials from the UV to IR regions of the electromagnetic spectrum, while the graphene acts as a charge collector for both photogenerated holes and electrons under an applied electric field. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Q energy trapping of temperature-stable shear waves with Lamé cross-sectional polarization in a single crystal silicon waveguide

Science.gov (United States)

Tabrizian, R.; Daruwalla, A.; Ayazi, F.

2016-03-01

A multi-port electrostatically driven silicon acoustic cavity is implemented that efficiently traps the energy of a temperature-stable eigen-mode with Lamé cross-sectional polarization. Dispersive behavior of propagating and evanescent guided waves in a ⟨100⟩-aligned single crystal silicon waveguide is used to engineer the acoustic energy distribution of a specific shear eigen-mode that is well known for its low temperature sensitivity when implemented in doped single crystal silicon. Such an acoustic energy trapping in the central region of the acoustic cavity geometry and far from substrate obviates the need for narrow tethers that are conventionally used for non-destructive and high quality factor (Q) energy suspension in MEMS resonators; therefore, the acoustically engineered waveguide can simultaneously serve as in-situ self-oven by passing large uniformly distributed DC currents through its body and without any concern about perturbing the mode shape or deforming narrow supports. Such a stable thermo-structural performance besides large turnover temperatures than can be realized in Lamé eigen-modes make this device suitable for implementation of ultra-stable oven-controlled oscillators. 78 MHz prototypes implemented in arsenic-doped single crystal silicon substrates with different resistivity are transduced by in- and out-of-plane narrow-gap capacitive ports, showing high Q of ˜43k. The low resistivity device shows an overall temperature-induced frequency drift of 200 ppm over the range of -20 °C to 80 °C, which is ˜15× smaller compared to overall frequency drift measured for the similar yet high resistivity device in the same temperature range. Furthermore, a frequency tuning of ˜2100 ppm is achieved in high resistivity device by passing 45 mA DC current through its body. Continuous operation of the device under such a self-ovenizing current over 10 days did not induce frequency instability or degradation in Q.