WorldWideScience

Sample records for silicon evanescent modulators

  1. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    2015-01-01

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  2. Mode-locked silicon evanescent lasers.

    Science.gov (United States)

    Koch, Brian R; Fang, Alexander W; Cohen, Oded; Bowers, John E

    2007-09-03

    We demonstrate electrically pumped lasers on silicon that produce pulses at repetition rates up to 40 GHz. The mode locked lasers generate 4 ps pulses with low jitter and extinction ratios above 18 dB, making them suitable for data and telecommunication transmitters and for clock generation and distribution. Results of both passive and hybrid mode locking are discussed. This type of device could enable new silicon based integrated technologies, such as optical time division multiplexing (OTDM), wavelength division multiplexing (WDM), and optical code division multiple access (OCDMA).

  3. Evanescently Coupled Rectangular Microresonators in Silicon-on-Insulator with High Q-Values: Experimental Characterization

    Directory of Open Access Journals (Sweden)

    Manuel Mendez-Astudillo

    2017-04-01

    Full Text Available We report on evanescently coupled rectangular microresonators with dimensions up to 20 × 10 μm2 in silicon-on-insulator in an add-drop filter configuration. The influence of the geometrical parameters of the device was experimentally characterized and a high Q value of 13,000 was demonstrated as well as the multimode optical resonance characteristics in the drop port. We also show a 95% energy transfer between ports when the device is operated in TM-polarization and determine the full symmetry of the device by using an eight-port configuration, allowing the drop waveguide to be placed on any of its sides, providing a way to filter and route optical signals. We used the FDTD method to analyze the device and e-beam lithography and dry etching techniques for fabrication.

  4. Compact 3D printed module for fluorescence and label-free imaging using evanescent excitation

    Science.gov (United States)

    Pandey, Vikas; Gupta, Shalini; Elangovan, Ravikrishnan

    2018-01-01

    Total internal reflection fluorescence (TIRF) microscopy is widely used for selective excitation and high-resolution imaging of fluorophores, and more recently label-free nanosized objects, with high vertical confinement near a liquid-solid interface. Traditionally, high numerical aperture objectives (>1.4) are used to simultaneously generate evanescent waves and collect fluorescence emission signals which limits their use to small area imaging (filters to prevent specular reflection within the objective lenses. We have developed a compact 3D module called cTIRF that can generate evanescent waves in microscope glass slides via a planar waveguide illumination. The module can be attached as a fixture to any existing optical microscope, converting it into a TIRF and enabling high signal-to-noise ratio (SNR) fluorescence imaging using any magnification objective. As the incidence optics is perpendicular to the detector, label-free evanescent scattering-based imaging of submicron objects can also be performed without using emission filters. SNR is significantly enhanced in this case as compared to cTIRF alone, as seen through our model experiments performed on latex beads and mammalian cells. Extreme flexibility and the low cost of our approach makes it scalable for limited resource settings.

  5. Silicon Optical Modulator Simulation

    Directory of Open Access Journals (Sweden)

    Soon Thor LIM

    2015-04-01

    Full Text Available We developed a way of predicting and analyzing high speed optical modulator. Our research adopted a bottom-up approach to consider high-speed optical links using an eye diagram. Our method leverages on modular mapping of electrical characteristics to optical characteristics, while attaining the required accuracy necessary for device footprint approaching sub-micron scales where electrical data distribution varies drastically. We calculate for the bias dependent phase shift (2pi/mm and loss (dB/mm for the optical modulator based on the real and imaginary part of complex effective indices. Subsequently, combine effectively both the electrical and optical profiles to construct the optical eye diagram which is the essential gist of signal integrity of such devices.

  6. ATLAS SCT - Progress on the Silicon Modules

    CERN Multimedia

    Tyndel, M.

    The ATLAS SCT consists of 4088 silicon modules. Each module is made up of 4 silicon sensors with 1536 readout strips. Individual strips are connected to FE amplifiers, discriminators and pipelines on the module, i.e. there are 12 radiation hard ASICs, each containing 128 channels on the module. The sensors and the ASICs were developed for the ATLAS experiment and production is proceeding smoothly with over half the components delivered. The components of a module - 4 silicon sensors, a Cu/polyimide hybrid and pitch adaptor, and 12 ASICs - need to be carefully and precisely assembled onto a carbon and ceramic framework, which supports the module and removes the heat. Eleven production clusters are preparing to carry this out over the next two years. An important milestone for the barrel modules has been passed with the first cluster (KEK) now in production (~40 modules produced). A second cluster UK-B has qualified by producing five modules within specification (see below) and is about to start production. T...

  7. Thin film silicon modules on plastic superstrates

    NARCIS (Netherlands)

    Rath, J.K.; Liu, Y; Borreman, A.; Hamers, E.A.G.; Schlatmann, R.; Jongerden, G.J.; Schropp, R.E.I.

    2008-01-01

    The aim of this research is to fabricate high efficiency a-Si/μc-Si tandem solar cell modules on flexible (polymer) superstrates using the Helianthos concept. As a first step we began by depositing the top cell which contains an amorphous silicon (a-Si:H) i-layer of 350 nm made by VHF PECVD at 50

  8. Field performance of a polycrystalline silicon module

    International Nuclear Information System (INIS)

    Adegboyega, G.A.; Kuku, T.A.; Salau, A.A.M.

    1985-12-01

    The field performance of a polycrystalline silicon module is reported. The recorded data include the ambient temperature, solar insolation and the module output power. The module has given efficiencies in the range of 2-4% and has demonstrated good stability over a ten month period. From the field data, equations that could be used to predict performance for various seasons of the year for this location have been developed and the fit between predicted and actual performance has been found to be quite good. (author)

  9. Reduced thermal conductivity of isotopically modulated silicon multilayer structures

    DEFF Research Database (Denmark)

    Bracht, H.; Wehmeier, N.; Eon, S.

    2012-01-01

    We report measurements of the thermal conductivity of isotopically modulated silicon that consists of alternating layers of highly enriched silicon-28 and silicon-29. A reduced thermal conductivity of the isotopically modulated silicon compared to natural silicon was measured by means of time......-resolved x-ray scattering. Comparison of the experimental results to numerical solutions of the corresponding heat diffusion equations reveals a factor of three lower thermal conductivity of the isotope structure compared to natural Si. Our results demonstrate that the thermal conductivity of silicon can...

  10. Use of analyte-modulated modal power distribution in multimode optical fibers for simultaneous single-wavelength evanescent-wave refractometry and spectrometry.

    Science.gov (United States)

    Potyrailo, R A; Ruddy, V P; Hieftje, G M

    1999-11-01

    A new method is described for the simultaneous determination of absorbance and refractive index of a sample medium. The method is based on measurement of the analyte-modulated modal power distribution (MPD) in a multimode waveguide. In turn, the MPD is quantified by the far-field spatial pattern and intensity of light, i.e., the Fraunhofer diffraction pattern (registered on a CCD camera), that emerges from a multimode optical fiber. Operationally, light that is sent down the fiber interacts with the surrounding analyte-containing medium by means of the evanescent wave at the fiber boundary. The light flux in the propagating beam and the internal reflection angles within the fiber are both affected by optical absorption connected with the analyte and by the refractive index of the analyte-containing medium. In turn, these angles are reflected in the angular divergence of the beam as it leaves the fiber. As a result, the Fraunhofer diffraction pattern of that beam yields two parameters that can, together, be used to deduce refractive index and absorbance. This MPD based detection offers important advantages over traditional evanescent-wave detection strategies which rely on recording only the total transmitted optical power or its lost fraction. First, simultaneous determination of sample refractive index and absorbance is possible at a single probe wavelength. Second, the sensitivity of refractometric and absorption measurements can be controlled simply, either by adjusting the distance between the end face of the fiber and the CCD detector or by monitoring selected modal groups at the fiber output. As a demonstration of these capabilities, several weakly absorbing solutions were examined, with refractive indices in the range from 1.3330 to 1.4553 and with absorption coefficients in the range 0-16 cm-1. The new detection strategy is likely to be important in applications in which sample coloration varies and when it is necessary to compensate for variations in the

  11. Planar Silicon Optical Waveguide Light Modulators

    DEFF Research Database (Denmark)

    Leistiko, Otto; Bak, H.

    1994-01-01

    that values in the nanosecond region should be possible, however, the measured values are high, 20 microseconds, due to the large area of the injector junctions, 1× 10¿2 cm2, and the limitations imposed by the detection circuit. The modulating properties of these devices are impressive, measurements......The results of an experimental investigation of a new type of optical waveguide based on planar technology in which the liglht guiding and modulation are achieved by exploiting free carrier effects in silicon are presented. Light is guided between the n+ substrate and two p+ regions, which also...... serve as carrier injectors for controling absorption. Light confinement of single mode devices is good, giving spot sizes of 9 ¿m FWHM. Insertion loss measurements indicate that the absorption losses for these waveguides are extremely low, less 1 dB/cm. Estimates of the switching speed indicate...

  12. Cryogenic Silicon Microstrip Detector Modules for LHC

    CERN Document Server

    Perea-Solano, B

    2004-01-01

    CERN is presently constructing the LHC, which will produce collisions of 7 TeV protons in 4 interaction points at a design luminosity of 1034 cm-2 s-1. The radiation dose resulting from the operation at high luminosity will cause a serious deterioration of the silicon tracker performance. The state-of-art silicon microstrip detectors can tolerate a fluence of about 3 1014 cm-2 of hadrons or charged leptons. This is insufficient, however, for long-term operation in the central parts of the LHC trackers, in particular after the possible luminosity upgrade of the LHC. By operating the detectors at cryogenic temperatures the radiation hardness can be improved by a factor 10. This work proposes a cryogenic microstrip detector module concept which has the features required for the microstrip trackers of the upgraded LHC experiments at CERN. The module can hold an edgeless sensor, being a good candidate for improved luminosity and total cross-section measurements in the ATLAS, CMS and TOTEM experiments. The design o...

  13. The impact of silicon feedstock on the PV module cost

    NARCIS (Netherlands)

    del Coso, G.; del Cañizo, C.; Sinke, W.C.

    2010-01-01

    The impact of the use of new (solar grade) silicon feedstock materials on the manufacturing cost of wafer-based crystalline silicon photovoltaic modules is analyzed considering effects of material cost, efficiency of utilisation, and quality. Calculations based on data provided by European industry

  14. High speed all-silicon optical modulator

    International Nuclear Information System (INIS)

    Marris-Morini, Delphine; Le Roux, Xavier; Pascal, Daniel; Vivien, Laurent; Cassan, Eric; Fedeli, Jean Marc; Damlencourt, Jean Francois; Bouville, David; Palomo, Jose; Laval, Suzanne

    2006-01-01

    Electrorefractive effect is experimentally demonstrated in an all-silicon optical structure. A highly doped Si P + layer is embedded in the intrinsic region of a PIN diode integrated in a SOI waveguide. Holes are confined at equilibrium around the P + layer. By applying a reverse bias to the diode, electrical field sweeps the carriers out of the active region. Free carrier concentration variations are responsible for local refractive index variations leading to an effective index variation of the waveguide optical mode and to an optical absorption variation. As a figure of merit, the product V π L π , determined from the measured effective index variation, is equal to 3.1 V cm. Furthermore, the device performances have theoretically been investigated. Estimations show that V π L π as small as 1 V cm are feasible using optimized structures. Response times lower than 2 ps are predicted, which gives the possibility to achieve very high-speed modulation. Furthermore, a temperature increases from 300 to 400 K does not change the index variation amplitude, and despite the carrier mobility reduction, response times are still lower than 2 ps

  15. Beam test of CSES silicon strip detector module

    Science.gov (United States)

    Zhang, Da-Li; Lu, Hong; Wang, Huan-Yu; Li, Xin-Qiao; Xu, Yan-Bing; An, Zheng-Hua; Yu, Xiao-xia; Wang, Hui; Shi, Feng; Wang, Ping; Zhao, Xiao-Yun

    2017-05-01

    The silicon-strip tracker of the China Seismo-Electromagnetic Satellite (CSES) consists of two double-sided silicon strip detectors (DSSDs) which provide incident particle tracking information. A low-noise analog ASIC VA140 was used in this study for DSSD signal readout. A beam test on the DSSD module was performed at the Beijing Test Beam Facility of the Beijing Electron Positron Collider (BEPC) using a 400-800 MeV/c proton beam. The pedestal analysis results, RMSE noise, gain correction, and intensity distribution of incident particles of the DSSD module are presented. Supported by the XXX Civil Space Programme

  16. Significantly High Modulation Efficiency of Compact Graphene Modulator Based on Silicon Waveguide.

    Science.gov (United States)

    Shu, Haowen; Su, Zhaotang; Huang, Le; Wu, Zhennan; Wang, Xingjun; Zhang, Zhiyong; Zhou, Zhiping

    2018-01-17

    We theoretically and experimentally demonstrate a significantly large modulation efficiency of a compact graphene modulator based on a silicon waveguide using the electro refractive effect of graphene. The modulation modes of electro-absorption and electro-refractive can be switched with different applied voltages. A high extinction ratio of 25 dB is achieved in the electro-absorption modulation mode with a driving voltage range of 0 V to 1 V. For electro-refractive modulation, the driving voltage ranges from 1 V to 3 V with a 185-pm spectrum shift. The modulation efficiency of 1.29 V · mm with a 40-μm interaction length is two orders of magnitude higher than that of the first reported graphene phase modulator. The realisation of phase and intensity modulation with graphene based on a silicon waveguide heralds its potential application in optical communication and optical interconnection systems.

  17. Optical modulation in silicon-vanadium dioxide photonic structures

    Science.gov (United States)

    Miller, Kevin J.; Hallman, Kent A.; Haglund, Richard F.; Weiss, Sharon M.

    2017-08-01

    All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO2) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO2 length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO2 all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.

  18. Silicon nanowire networks for multi-stage thermoelectric modules

    International Nuclear Information System (INIS)

    Norris, Kate J.; Garrett, Matthew P.; Zhang, Junce; Coleman, Elane; Tompa, Gary S.; Kobayashi, Nobuhiko P.

    2015-01-01

    Highlights: • Fabricated flexible single, double, and quadruple stacked Si thermoelectric modules. • Measured an enhanced power production of 27%, showing vertical stacking is scalable. • Vertically scalable thermoelectric module design of semiconducting nanowires. • Design can utilize either p or n-type semiconductors, both types are not required. • ΔT increases with thickness therefore power/area can increase as modules are stacked. - Abstract: We present the fabrication and characterization of single, double, and quadruple stacked flexible silicon nanowire network based thermoelectric modules. From double to quadruple stacked modules, power production increased 27%, demonstrating that stacking multiple nanowire thermoelectric devices in series is a scalable method to generate power by supplying larger temperature gradient. We present a vertically scalable multi-stage thermoelectric module design using semiconducting nanowires, eliminating the need for both n-type and p-type semiconductors for modules

  19. Test-to-Failure of Crystalline Silicon Modules: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Hacke, P.; Terwilliger, K.; Glick, S.; Trudell, D.; Bosco, N.; Johnston, S.; Kurtz, S. R.

    2010-10-01

    Accelerated lifetime testing of five crystalline silicon module designs was carried out according to the Terrestrial Photovoltaic Module Accelerated Test-to-Failure Protocol. This protocol compares the reliability of various module constructions on a quantitative basis. The modules under test are subdivided into three accelerated lifetime testing paths: 85..deg..C/85% relative humidity with system bias, thermal cycling between ?40..deg..C and 85..deg..C, and a path that alternates between damp heat and thermal cycling. The most severe stressor is damp heat with system bias applied to simulate the voltages that modules experience when connected in an array. Positive 600 V applied to the active layer with respect to the grounded module frame accelerates corrosion of the silver grid fingers and degrades the silicon nitride antireflective coating on the cells. Dark I-V curve fitting indicates increased series resistance and saturation current around the maximum power point; however, an improvement in junction recombination characteristics is obtained. Shunt paths and cell-metallization interface failures are seen developing in the silicon cells as determined by electroluminescence, thermal imaging, and I-V curves in the case of negative 600 V bias applied to the active layer. Ability to withstand electrolytic corrosion, moisture ingress, and ion drift under system voltage bias are differentiated.

  20. Reduction of the environmental impacts in crystalline silicon module manufacturing

    NARCIS (Netherlands)

    Alsema, E.A.|info:eu-repo/dai/nl/073416258; de Wild-Schoten, M.J.

    2007-01-01

    In this paper we review the most important options to reduce environmental impacts of crystalline silicon modules. We investigate which are the main barriers for implementation of the measure. Finally we review which measures to reduce environmental impacts could also lead to a cost reduction.

  1. 76 FR 78313 - Crystalline Silicon Photovoltaic Cells and Modules From China

    Science.gov (United States)

    2011-12-16

    ...)] Crystalline Silicon Photovoltaic Cells and Modules From China Determinations On the basis of the record \\1... injured by reason of imports from China of crystalline silicon photovoltaic cells and modules, provided... imports of crystalline silicon photovoltaic cells and modules from China. Accordingly, effective October...

  2. 77 FR 72884 - Crystalline Silicon Photovoltaic Cells and Modules From China

    Science.gov (United States)

    2012-12-06

    ... Silicon Photovoltaic Cells and Modules From China Determinations On the basis of the record \\1\\ developed... imports of crystalline silicon photovoltaic cells and modules from China, provided for in subheadings 8501... silicon photovoltaic cells and modules from China. Chairman Irving A. Williamson and Commissioner Dean A...

  3. Beam tests of ATLAS SCT silicon strip detector modules

    CERN Document Server

    Campabadal, F; Key, M; Lozano, M; Martínez, C; Pellegrini, G; Rafí, J M; Ullán, M; Johansen, L; Pommeresche, B; Stugu, B; Ciocio, A; Fadeev, V; Gilchriese, M G D; Haber, C; Siegrist, J; Spieler, H; Vu, C; Bell, P J; Charlton, D G; Dowell, John D; Gallop, B J; Homer, R J; Jovanovic, P; Mahout, G; McMahon, T J; Wilson, J A; Barr, A J; Carter, J R; Fromant, B P; Goodrick, M J; Hill, J C; Lester, C G; Palmer, M J; Parker, M A; Robinson, D; Sabetfakhri, A; Shaw, R J; Anghinolfi, F; Chesi, Enrico Guido; Chouridou, S; Fortin, R; Grosse-Knetter, J; Gruwé, M; Ferrari, P; Jarron, P; Kaplon, J; MacPherson, A; Niinikoski, T O; Pernegger, H; Roe, S; Rudge, A; Ruggiero, G; Wallny, R; Weilhammer, P; Bialas, W; Dabrowski, W; Grybos, P; Koperny, S; Blocki, J; Brückman, P; Gadomski, S; Godlewski, J; Górnicki, E; Malecki, P; Moszczynski, A; Stanecka, E; Stodulski, M; Szczygiel, R; Turala, M; Wolter, M; Ahmad, A; Benes, J; Carpentieri, C; Feld, L; Ketterer, C; Ludwig, J; Meinhardt, J; Runge, K; Mikulec, B; Mangin-Brinet, M; D'Onofrio, M; Donega, M; Moêd, S; Sfyrla, A; Ferrère, D; Clark, A G; Perrin, E; Weber, M; Bates, R L; Cheplakov, A P; Saxon, D H; O'Shea, V; Smith, K M; Iwata, Y; Ohsugi, T; Kohriki, T; Kondo, T; Terada, S; Ujiie, N; Ikegami, Y; Unno, Y; Takashima, R; Brodbeck, T; Chilingarov, A G; Hughes, G; Ratoff, P; Sloan, T; Allport, P P; Casse, G L; Greenall, A; Jackson, J N; Jones, T J; King, B T; Maxfield, S J; Smith, N A; Sutcliffe, P; Vossebeld, Joost Herman; Beck, G A; Carter, A A; Lloyd, S L; Martin, A J; Morris, J; Morin, J; Nagai, K; Pritchard, T W; Anderson, B E; Butterworth, J M; Fraser, T J; Jones, T W; Lane, J B; Postranecky, M; Warren, M R M; Cindro, V; Kramberger, G; Mandic, I; Mikuz, M; Duerdoth, I P; Freestone, J; Foster, J M; Ibbotson, M; Loebinger, F K; Pater, J; Snow, S W; Thompson, R J; Atkinson, T M; Bright, G; Kazi, S; Lindsay, S; Moorhead, G F; Taylor, G N; Bachindgagyan, G; Baranova, N; Karmanov, D; Merkine, M; Andricek, L; Bethke, Siegfried; Kudlaty, J; Lutz, Gerhard; Moser, H G; Nisius, R; Richter, R; Schieck, J; Cornelissen, T; Gorfine, G W; Hartjes, F G; Hessey, N P; de Jong, P; Muijs, A J M; Peeters, S J M; Tomeda, Y; Tanaka, R; Nakano, I; Dorholt, O; Danielsen, K M; Huse, T; Sandaker, H; Stapnes, S; Bargassa, Pedrame; Reichold, A; Huffman, T; Nickerson, R B; Weidberg, A; Doucas, G; Hawes, B; Lau, W; Howell, D; Kundu, N; Wastie, R; Böhm, J; Mikestikova, M; Stastny, J; Broklová, Z; Broz, J; Dolezal, Z; Kodys, P; Kubík, P; Reznicek, P; Vorobel, V; Wilhelm, I; Chren, D; Horazdovsky, T; Linhart, V; Pospísil, S; Sinor, M; Solar, M; Sopko, B; Stekl, I; Ardashev, E N; Golovnya, S N; Gorokhov, S A; Kholodenko, A G; Rudenko, R E; Ryadovikov, V N; Vorobev, A P; Adkin, P J; Apsimon, R J; Batchelor, L E; Bizzell, J P; Booker, P; Davis, V R; Easton, J M; Fowler, C; Gibson, M D; Haywood, S J; MacWaters, C; Matheson, J P; Matson, R M; McMahon, S J; Morris, F S; Morrissey, M; Murray, W J; Phillips, P W; Tyndel, M; Villani, E G; Dorfan, D E; Grillo, A A; Rosenbaum, F; Sadrozinski, H F W; Seiden, A; Spencer, E; Wilder, M; Booth, P; Buttar, C M; Dawson, I; Dervan, P; Grigson, C; Harper, R; Moraes, A; Peak, L S; Varvell, K E; Chu Ming Lee; Hou Li Shing; Lee Shih Chang; Teng Ping Kun; Wan Chang Chun; Hara, K; Kato, Y; Kuwano, T; Minagawa, M; Sengoku, H; Bingefors, N; Brenner, R; Ekelöf, T J C; Eklund, L; Bernabeu, J; Civera, J V; Costa, M J; Fuster, J; García, C; García, J E; González-Sevilla, S; Lacasta, C; Llosa, G; Martí i García, S; Modesto, P; Sánchez, J; Sospedra, L; Vos, M; Fasching, D; González, S; Jared, R C; Charles, E

    2005-01-01

    The design and technology of the silicon strip detector modules for the Semiconductor Tracker (SCT) of the ATLAS experiment have been finalised in the last several years. Integral to this process has been the measurement and verification of the tracking performance of the different module types in test beams at the CERN SPS and the KEK PS. Tests have been performed to explore the module performance under various operating conditions including detector bias voltage, magnetic field, incidence angle, and state of irradiation up to 3 multiplied by 1014 protons per square centimetre. A particular emphasis has been the understanding of the operational consequences of the binary readout scheme.

  4. Mass productions of thin film silicon PV modules

    International Nuclear Information System (INIS)

    Tawada, Y.; Yamagishi, H.; Yamamoto, K.

    2003-01-01

    Mass production technologies of a-Si single junction and a-Si/poly-Si hybrid modules with stable 8% and 10% efficiency were developed in the Shiga factory of Kaneka Corporation. Kaneka instituted Kaneka Solartech Corporation (KST) as a subsidiary company of 100% shareholder and invested 20 MW production plant in Toyooka City in 1999. There are fully automatic thin film fabrication equipments. KST started the manufacturing amorphous silicon PV modules in 1999 and those of hybrid type PV modules in 2001. The largest size glass substrates used for these modules are 95x98 cm and variable size of modules are being produced by cutting these large area base modules. Recent production yields are higher than 98%. Production technologies of a-Si, thin c-Si and solar cells, performances of modules, applications to the rooftop PV systems will be presented. We estimate the production cost of a-Si solar modules and a-Si/thin c-Si hybrid solar modules. The future business plan of our new type solar modules and our production lines will be discussed. (author)

  5. Wigner functions for evanescent waves.

    Science.gov (United States)

    Petruccelli, Jonathan C; Tian, Lei; Oh, Se Baek; Barbastathis, George

    2012-09-01

    We propose phase space distributions, based on an extension of the Wigner distribution function, to describe fields of any state of coherence that contain evanescent components emitted into a half-space. The evanescent components of the field are described in an optical phase space of spatial position and complex-valued angle. Behavior of these distributions upon propagation is also considered, where the rapid decay of the evanescent components is associated with the exponential decay of the associated phase space distributions. To demonstrate the structure and behavior of these distributions, we consider the fields generated from total internal reflection of a Gaussian Schell-model beam at a planar interface.

  6. ATLAS silicon module assembly and qualification tests at IFIC Valencia

    International Nuclear Information System (INIS)

    Bernabeu, J; Civera, J V; Costa, M J; Escobar, C; Fuster, J; Garcia, C; Garcia-Navarro, J E; Gonzalez, F; Gonzalez-Sevilla, S; Lacasta, C; Llosa, G; Marti-Garcia, S; Minano, M; Mitsou, V A; Modesto, P; Nacher, J; Rodriguez-Oliete, R; Sanchez, F J; Sospedra, L; Strachko, V

    2007-01-01

    ATLAS experiment, designed to probe the interactions of particles emerging out of proton proton collisions at energies of up to 14 TeV, will assume operation at the Large Hadron Collider (LHC) at CERN in 2007. This paper discusses the assembly and the quality control tests of forward detector modules for the ATLAS silicon microstrip detector assembled at the Instituto de Fisica Corpuscular (IFIC) in Valencia. The construction and testing procedures are outlined and the laboratory equipment is briefly described. Emphasis is given on the module quality achieved in terms of mechanical and electrical stability

  7. Comparison of silicon strip tracker module size using large sensors from 6 inch wafers

    CERN Multimedia

    Honma, Alan

    1999-01-01

    Two large silicon strip sensor made from 6 inch wafers are placed next to each other to simulate the size of a CMS outer silicon tracker module. On the left is a prototype 2 sensor CMS inner endcap silicon tracker module made from 4 inch wafers.

  8. Monolithic amorphous silicon modules on continuous polymer substrate

    Energy Technology Data Exchange (ETDEWEB)

    Grimmer, D.P. (Iowa Thin Film Technologies, Inc., Ames, IA (United States))

    1992-03-01

    This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

  9. Proposed method of assembly for the BCD silicon strip vertex detector modules

    International Nuclear Information System (INIS)

    Lindenmeyer, C.

    1989-01-01

    The BCD Silicon strip Vertex Detector is constructed of 10 identical central region modules and 18 similar forward region modules. This memo describes a method of assembling these modules from individual silicon wafers. Each wafer is fitted with associated front end electronics and cables and has been tested to insure that only good wafers reach the final assembly stage. 5 figs

  10. 76 FR 81914 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2011-12-29

    ... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Postponement of... investigation of crystalline silicon photovoltaic cells, whether or not assembled into modules, from the People..., 2012. \\1\\ See Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the...

  11. Durable crystalline Si photovoltaic modules based on silicone-sheet encapsulants

    Science.gov (United States)

    Hara, Kohjiro; Ohwada, Hiroto; Furihata, Tomoyoshi; Masuda, Atsushi

    2018-02-01

    Crystalline Si photovoltaic (PV) modules were fabricated with sheets of poly(dimethylsiloxane) (silicone) as an encapsulant. The long-term durability of the silicone-encapsulated PV modules was experimentally investigated. The silicone-based modules enhanced the long-term durability against potential-induced degradation (PID) and a damp-heat (DH) condition at 85 °C with 85% relative humidity (RH). In addition, we designed and fabricated substrate-type Si PV modules based on the silicone encapsulant and an Al-alloy plate as the substratum, which demonstrated high impact resistance and high incombustible performance. The high chemical stability, high volume resistivity, rubber-like elasticity, and incombustibility of the silicone encapsulant resulted in the high durability of the modules. Our results indicate that silicone is an attractive encapsulation material, as it improves the long-term durability of crystalline Si PV modules.

  12. Evaluation of a high resolution silicon PET insert module

    Energy Technology Data Exchange (ETDEWEB)

    Grkovski, Milan, E-mail: milan.grkovski@ijs.si [Jožef Stefan Institute, Ljubljana (Slovenia); Memorial Sloan Kettering Cancer Center, New York, NY (United States); Brzezinski, Karol [IFIC/CSIC, Valencia (Spain); Cindro, Vladimir [Jožef Stefan Institute, Ljubljana (Slovenia); Clinthorne, Neal H. [University of Michigan, Ann Arbor, MI (United States); Kagan, Harris [Ohio State University, Columbus, OH (United States); Lacasta, Carlos [IFIC/CSIC, Valencia (Spain); Mikuž, Marko [Jožef Stefan Institute, Ljubljana (Slovenia); Solaz, Carles [IFIC/CSIC, Valencia (Spain); Studen, Andrej [Jožef Stefan Institute, Ljubljana (Slovenia); Weilhammer, Peter [Ohio State University, Columbus, OH (United States); Žontar, Dejan [Jožef Stefan Institute, Ljubljana (Slovenia)

    2015-07-11

    Conventional PET systems can be augmented with additional detectors placed in close proximity of the region of interest. We developed a high resolution PET insert module to evaluate the added benefit of such a combination. The insert module consists of two back-to-back 1 mm thick silicon sensors, each segmented into 1040 1 mm{sup 2} pads arranged in a 40 by 26 array. A set of 16 VATAGP7.1 ASICs and a custom assembled data acquisition board were used to read out the signal from the insert module. Data were acquired in slice (2D) geometry with a Jaszczak phantom (rod diameters of 1.2–4.8 mm) filled with {sup 18}F-FDG and the images were reconstructed with ML-EM method. Both data with full and limited angular coverage from the insert module were considered and three types of coincidence events were combined. The ratio of high-resolution data that substantially improves quality of the reconstructed image for the region near the surface of the insert module was estimated to be about 4%. Results from our previous studies suggest that such ratio could be achieved at a moderate technological expense by using an equivalent of two insert modules (an effective sensor thickness of 4 mm)

  13. Preliminary modulation transfer function study on amorphous silicon

    International Nuclear Information System (INIS)

    Khairul Anuar Mohd Salleh; Ab Razak Hamzah; Mohd Ashhar Khalid

    2006-01-01

    Modulation Transfer Function, (MTF) is the scientific means of evaluating the fundamental spatial resolution performance of an imaging system. In the study, the modulation transfer function of an amorphous silicon (aSi) sensor array is measured by using Edge Spread Function (ESF) Technique which is extracting a profile from the linearised image of the sharp edge. The Platinum foil is used to determine the ESF. The detector under study was a 2,304 (h) x 3,200 (v) total pixel matrix, 127 μm2 pixel pitch, 57% fill factor and using Gd2O2S:Tb Kodak Lanex Regular as the conversion screen. The ESF measurement is done by using 75 - 100 kV range of x-ray with constant mA. (Author)

  14. 77 FR 10478 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-02-22

    ... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Postponement of... determination in the countervailing duty investigation of crystalline silicon photovoltaic cells, whether or not... Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of...

  15. 77 FR 4764 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-01-31

    ... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Second... preliminary determination of the countervailing duty investigation of crystalline silicon photovoltaic cells... February 13, 2012.\\1\\ \\1\\ See Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules...

  16. 77 FR 37877 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-06-25

    ... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Preliminary... crystalline silicon photovoltaic cells, whether or not assembled into modules (``solar cells''), from the.... Correction In the Federal Register notice Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled...

  17. 76 FR 66748 - Crystalline Silicon Photovoltaic Cells and Modules From China; Institution of Antidumping and...

    Science.gov (United States)

    2011-10-27

    ... INTERNATIONAL TRADE COMMISSION [Investigation Nos. 701-TA-481 and 731-TA-1190 (Preliminary)] Crystalline Silicon Photovoltaic Cells and Modules From China; Institution of Antidumping and Countervailing... imports from China of crystalline silicon photovoltaic cells and modules, provided for in subheadings 8541...

  18. Bending cyclic load test for crystalline silicon photovoltaic modules

    Science.gov (United States)

    Suzuki, Soh; Doi, Takuya; Masuda, Atsushi; Tanahashi, Tadanori

    2018-02-01

    The failures induced by thermomechanical fatigue within crystalline silicon photovoltaic modules are a common issue that can occur in any climate. In order to understand these failures, we confirmed the effects of compressive or tensile stresses (which were cyclically loaded on photovoltaic cells and cell interconnect ribbons) at subzero, moderate, and high temperatures. We found that cell cracks were induced predominantly at low temperatures, irrespective of the compression or tension applied to the cells, although the orientation of cell cracks was dependent on the stress applied. The fracture of cell interconnect ribbons was caused by cyclical compressive stress at moderate and high temperatures, and this failure was promoted by the elevation of temperature. On the basis of these results, the causes of these failures are comprehensively discussed in relation to the viscoelasticity of the encapsulant.

  19. 77 FR 35425 - Crystalline Silicon Photovoltaic Cells and Modules From China; Scheduling of the Final Phase of...

    Science.gov (United States)

    2012-06-13

    ... Silicon Photovoltaic Cells and Modules From China; Scheduling of the Final Phase of Countervailing Duty... silicon photovoltaic cells and modules, provided for in subheadings 8501.31.80, 8501.61.00, 8507.20.80... photovoltaic cells, and modules, laminates, and panels, consisting of crystalline silicon photovoltaic cells...

  20. Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

    Science.gov (United States)

    Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

    2015-11-13

    The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

  1. Design and test of a prototype silicon detector module for ATLAS Semiconductor Tracker endcaps

    International Nuclear Information System (INIS)

    Clark, A.G.; Donega, M.; D'Onofrio, M.

    2005-01-01

    The ATLAS Semiconductor Tracker (SCT) will be a central part of the tracking system of the ATLAS experiment. The SCT consists of four concentric barrels of silicon detectors as well as two silicon endcap detectors formed by nine disks each. The layout of the forward silicon detector module presented in this paper is based on the approved layout of the silicon detectors of the SCT, their geometry and arrangement in disks, but uses otherwise components identical to the barrel modules of the SCT. The module layout is optimized for excellent thermal management and electrical performance, while keeping the assembly simple and adequate for a large scale module production. This paper summarizes the design and layout of the module and present results of a limited prototype production, which has been extensively tested in the laboratory and testbeam. The module design was not finally adopted for series production because a dedicated forward hybrid layout was pursued

  2. Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

    Science.gov (United States)

    Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

    2018-05-01

    An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.

  3. Crystalline Silicon Interconnected Strips (XIS). Introduction to a New, Integrated Device and Module Concept

    Energy Technology Data Exchange (ETDEWEB)

    Van Roosmalen, J.; Bronsveld, P.; Mewe, A.; Janssen, G.; Stodolny, M.; Cobussen-Pool, E.; Bennett, I.; Weeber, A.; Geerligs, B. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG, Petten (Netherlands)

    2012-06-15

    A new device concept for high efficiency, low cost, wafer based silicon solar cells is introduced. To significantly lower the costs of Si photovoltaics, high efficiencies and large reductions of metals and silicon costs are required. To enable this, the device architecture was adapted into low current devices by applying thin silicon strips, to which a special high efficiency back-contact heterojunction cell design was applied. Standard industrial production processes can be used for our fully integrated cell and module design, with a cost reduction potential below 0.5 euro/Wp. First devices have been realized demonstrating the principle of a series connected back contact hybrid silicon heterojunction module concept.

  4. Economic Feasibility for Recycling of Waste Crystalline Silicon Photovoltaic Modules

    Directory of Open Access Journals (Sweden)

    Idiano D’Adamo

    2017-01-01

    Full Text Available Cumulative photovoltaic (PV power installed in 2016 was equal to 305 GW. Five countries (China, Japan, Germany, the USA, and Italy shared about 70% of the global power. End-of-life (EoL management of waste PV modules requires alternative strategies than landfill, and recycling is a valid option. Technological solutions are already available in the market and environmental benefits are highlighted by the literature, while economic advantages are not well defined. The aim of this paper is investigating the financial feasibility of crystalline silicon (Si PV module-recycling processes. Two well-known indicators are proposed for a reference 2000 tons plant: net present value (NPV and discounted payback period (DPBT. NPV/size is equal to −0.84 €/kg in a baseline scenario. Furthermore, a sensitivity analysis is conducted, in order to improve the solidity of the obtained results. NPV/size varies from −1.19 €/kg to −0.50 €/kg. The absence of valuable materials plays a key role, and process costs are the main critical variables.

  5. Fiber optic evanescent wave biosensor

    Science.gov (United States)

    Duveneck, Gert L.; Ehrat, Markus; Widmer, H. M.

    1991-09-01

    The role of modern analytical chemistry is not restricted to quality control and environmental surveillance, but has been extended to process control using on-line analytical techniques. Besides industrial applications, highly specific, ultra-sensitive biochemical analysis becomes increasingly important as a diagnostic tool, both in central clinical laboratories and in the doctor's office. Fiber optic sensor technology can fulfill many of the requirements for both types of applications. As an example, the experimental arrangement of a fiber optic sensor for biochemical affinity assays is presented. The evanescent electromagnetic field, associated with a light ray guided in an optical fiber, is used for the excitation of luminescence labels attached to the biomolecules in solution to be analyzed. Due to the small penetration depth of the evanescent field into the medium, the generation of luminescence is restricted to the close proximity of the fiber, where, e.g., the luminescent analyte molecules combine with their affinity partners, which are immobilized on the fiber. Both cw- and pulsed light excitation can be used in evanescent wave sensor technology, enabling the on-line observation of an affinity assay on a macroscopic time scale (seconds and minutes), as well as on a microscopic, molecular time scale (nanoseconds or microseconds).

  6. 77 FR 25400 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-04-30

    ... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Alignment of... crystalline silicon photovoltaic cells, whether or not assembled into modules (solar cells) from the People's... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Initiation of...

  7. Large-scale module production for the CMS silicon strip tracker

    CERN Document Server

    Cattai, A

    2005-01-01

    The Silicon Strip Tracker (SST) for the CMS experiment at LHC consists of 210 m**2 of silicon strip detectors grouped into four distinct sub-systems. We present a brief description of the CMS Tracker, the industrialised detector module production methods and the current status of the SST with reference to some problems encountered at the factories and in the construction centres.

  8. 77 FR 14732 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-03-13

    ... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Postponement of... of an antidumping duty investigation of crystalline silicon photovoltaic cells, whether or not... currently due no later than March 27, 2012. \\1\\ See Crystalline Silicon Photovoltaic Cells, Whether or Not...

  9. Modulated surface textures for enhanced scattering in thin-film silicon solar cells

    NARCIS (Netherlands)

    Isabella, O.; Battaglia, C.; Ballif, C.; Zeman, M.

    2012-01-01

    Nano-scale randomly textured front transparent oxides are superposed on micro-scale etched glass substrates to form modulated surface textures. The resulting enhanced light scattering is implemented in single and double junction thin-film silicon solar cells.

  10. Compact temperature-insensitive modulator based on a silicon microring assistant Mach—Zehnder interferometer

    International Nuclear Information System (INIS)

    Zhang Xue-Jian; Feng Xue; Zhang Deng-Ke; Huang Yi-Dong

    2012-01-01

    On the silicon-on-insulator platform, an ultra compact temperature-insensitive modulator based on a cascaded microring assistant Mach—Zehnder interferometer is proposed and demonstrated with numerical simulation. According to the calculated results, the tolerated variation of ambient temperature can be as high as 134 °C while the footprint of such a silicon modulator is only 340 μm 2 . (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  11. Investigation of the impact of mechanical stress on the properties of silicon sensor modules for the ATLAS Phase II upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Stegler, Martin; Polay, Luise; Spehrlich, Dennis; Bloch, Ingo [DESY, Zeuthen (Germany)

    2016-07-01

    The new ATLAS tracker for phase II will be composed of silicon pixel and strip sensor modules. Such a module consists of silicon sensors, boards and readout chips. In a currently ongoing study new adhesives to connect the modular components thermally and mechanically are examined. It was shown that the silicon sensor is exposed to mechanical stress when part of a module. Mechanical stress can cause damage to a sensor and can change the tensors of electrical properties. The study of the effects of mechanical stress on characteristics of the silicon sensor modules are the focus in this presentation. The thermal induced tensile stress near to the surface of a silicon sensor build in a module was simulated. A four point bending setup was used to measure the maximum tensile stress of silicon and to verify the piezoresistive effect on ATLAS07 sensors. The results of the electrical measurements and simulations of stressed silicon sensor modules are shown in the presentation.

  12. A comparison of degradation in three amorphous silicon PV module technologies

    Energy Technology Data Exchange (ETDEWEB)

    Radue, C.; van Dyk, E.E. [Physics Department, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2010-03-15

    Three commercial amorphous silicon modules manufactured by monolithic integration and consisting of three technology types were analysed in this study. These modules were deployed outdoors for 14 months and underwent degradation. All three modules experienced the typical light-induced degradation (LID) described by the Staebler-Wronski effect, and this was followed by further degradation. A 14 W single junction amorphous silicon module degraded by about 45% of the initial measured maximum power output (P{sub MAX}) at the end of the study. A maximum of 30% of this has been attributed to LID and the further 15% to cell mismatch and cell degradation. The other two modules, a 64 W triple junction amorphous silicon module, and a 68 W flexible triple junction amorphous silicon module, exhibited LID followed by seasonal variation in the degraded P{sub MAX}. The 64 W module showed a maximum degradation in P{sub MAX} of about 22%. This is approximately 4% more than the manufacturer allowed for the initial LID. However, the seasonal variation in P{sub MAX} seems to be centred around the manufacturer's rating ({+-}4%). The 68 W flexible module has shown a maximum decrease in P{sub MAX} of about 27%. This decrease is about 17% greater than the manufacturer allowed for the initial LID. (author)

  13. Compact silicon photonics-based multi laser module for sensing

    Science.gov (United States)

    Ayotte, S.; Costin, F.; Babin, A.; Paré-Olivier, G.; Morin, M.; Filion, B.; Bédard, K.; Chrétien, P.; Bilodeau, G.; Girard-Deschênes, E.; Perron, L.-P.; Davidson, C.-A.; D'Amato, D.; Laplante, M.; Blanchet-Létourneau, J.

    2018-02-01

    A compact three-laser source for optical sensing is presented. It is based on a low-noise implementation of the Pound Drever-Hall method and comprises high-bandwidth optical phase-locked loops. The outputs from three semiconductor distributed feedback lasers, mounted on thermo-electric coolers (TEC), are coupled with micro-lenses into a silicon photonics (SiP) chip that performs beat note detection and several other functions. The chip comprises phase modulators, variable optical attenuators, multi-mode-interference couplers, variable ratio tap couplers, integrated photodiodes and optical fiber butt-couplers. Electrical connections between a metallized ceramic and the TECs, lasers and SiP chip are achieved by wirebonds. All these components stand within a 35 mm by 35 mm package which is interfaced with 90 electrical pins and two fiber pigtails. One pigtail carries the signals from a master and slave lasers, while another carries that from a second slave laser. The pins are soldered to a printed circuit board featuring a micro-processor that controls and monitors the system to ensure stable operation over fluctuating environmental conditions. This highly adaptable multi-laser source can address various sensing applications requiring the tracking of up to three narrow spectral features with a high bandwidth. It is used to sense a fiber-based ring resonator emulating a resonant fiber optics gyroscope. The master laser is locked to the resonator with a loop bandwidth greater than 1 MHz. The slave lasers are offset frequency locked to the master laser with loop bandwidths greater than 100 MHz. This high performance source is compact, automated, robust, and remains locked for days.

  14. Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

    OpenAIRE

    K?nig, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

    2017-01-01

    All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusi...

  15. 77 FR 73017 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-12-07

    ... photovoltaic cells, whether or not assembled into modules (solar cells), from the People's Republic of China... published its final determination in the countervailing duty investigation of solar cells from the PRC.\\2... covered by this order is crystalline silicon photovoltaic cells, and modules, laminates, and panels...

  16. 77 FR 17439 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-03-26

    ... cells or solar cells assembled into modules or panels, and thus quantity is not recorded consistently in... silicon photovoltaic cells, whether or not assembled into modules (solar cells) from the People's Republic... History The Department initiated a countervailing duty (CVD) investigation of solar cells from the PRC on...

  17. Simulation of thermal properties of the silicon detector modules in ATLAS

    CERN Document Server

    Duerdoth, I P; Yuldashev, B S

    2002-01-01

    The temperature distribution and power flow from cell on the Silicon Module of the Forward Semiconductor Tracker in the ATLAS experiment have been simulated for irradiated detector. Power generated by conduction was compared for the modules with one and two cooling points. To obtain an optimal cooling temperature, the temperature of the hottest cell was plotted against power on the silicon module. The analysis of the approximation function and values for the critical power for each cooling temperature are presented. The optimal value of the cooling temperature occurred to be 260 K. (author)

  18. Effects of excitation intensity on the photocurrent response of thin film silicon solar modules

    Science.gov (United States)

    Kim, Q.; Shumka, A.; Trask, J.

    1986-01-01

    Photocurrent responses of amorphous thin film silicon solar modules at room temperature were studied at different excitation intensities using various monochromatic light sources. Photocurrent imaging techniques have been effectively used to locate rapidly, and non-destructively, failure and defect sites in the multilayer thin film device. Differences observed in the photocurrent response characteristics for two different cells in the same amorphous thin film silicon solar module suggest the possibility of the formation of dissimilarly active devices, even though the module is processed in the same fabrication process. Possible mechanisms are discussed.

  19. Evanescent wave assisted nanomaterial coating.

    Science.gov (United States)

    Mondal, Samir K; Pal, Sudipta Sarkar; Kumbhakar, Dharmadas; Tiwari, Umesh; Bhatnagar, Randhir

    2013-08-01

    In this work we present a novel nanomaterial coating technique using evanescent wave (EW). The gradient force in the EW is used as an optical tweezer for tweezing and self-assembling nanoparticles on the source of EW. As a proof of the concept, we have used a laser coupled etched multimode optical fiber, which generates EW for the EW assisted coating. The section-wise etched multimode optical fiber is horizontally and superficially dipped into a silver/gold nanoparticles solution while the laser is switched on. The fiber is left until the solution recedes due to evaporation leaving the fiber in air. The coating time usually takes 40-50 min at room temperature. The scanning electron microscope image shows uniform and thin coating of self-assembled nanoparticles due to EW around the etched section. A coating thickness optical fiber probes and other plasmonic circuits.

  20. Construction and performance of the ATLAS silicon microstrip barrel modules

    International Nuclear Information System (INIS)

    Kondo, T.; Apsimon, R.; Beck, G.A.; Bell, P.; Brenner, R.; Bruckman de Renstrom, P.; Carter, A.A.; Carter, J.R.; Charlton, D.; Dabrowski, W.; Dorholt, O.; Ekelof, T.; Eklund, L.; Gibson, M.; Gadomski, S.; Grillo, A.; Grosse-Knetter, J.; Haber, C.; Hara, K.; Hill, J.C.; Ikegami, Y.; Iwata, Y.; Johansen, L.G.; Kohriki, T.; Macpherson, A.; McMahon, S.; Moorhead, G.; Morin, J.; Morris, J.; Morrissey, M.; Nagai, K.; Nakano, I.; Pater, J.; Pernegger, H.; Perrin, E.; Phillips, P.; Robinson, D.; Skubic, B.; Spencer, N.; Stapnes, S.; Stugu, B.; Takashima, R.; Terada, S.; Tyndel, M.; Ujiie, N.; Unno, Y.; Vos, M.

    2002-01-01

    The ATLAS Semiconductor Tracker (SCT) consists of four barrel cylinders and 18 end-cap disks. This paper describes the SCT modules of the barrel region, of which more than 2000 are about to be constructed. The module design is fixed. Its design concept is given together with the electrical, thermal and mechanical specifications. The pre-series production of the barrel modules is underway using mass-production procedures and jigs. The pre-series modules have given satisfactory performances on noise, noise occupancy, electrical as well as mechanical and thermal properties. In addition, irradiated modules were demonstrated to work successfully. Also first results from a 10-module system test are given

  1. Varactor-tuned Substrate Integrated Evanescent Filter

    DEFF Research Database (Denmark)

    Zhurbenko, Vitaliy; Acar, Öncel; Dong, Yunfeng

    Evanescent mode waveguides allow for more compact microwave component design in comparison to the traditional fundamental mode waveguide technology. Evanescent waveguides can be integrated into a dielectric substrate in order to further reduce the mass and volume. Unfortunately, traditional...... realization methods used in the standard evanescent waveguides are often not directly applicable to substrate integrated waveguide (SIW) technology due to dielectric filling and small height of the waveguide. In this work, one of the realization methods of evanescent waveguides using lumped elements...... is considered. In contrast to other methods described in the literature, it avoids etching split ring resonators in the metal layer of the SIW. The filters presented here use varactors as tuning elements. The varactors (as well as DC decoupling circuits) are mounted on the surface of PCB bringing the lower...

  2. Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Feng; Spring, Andrew M. [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Sato, Hiromu [Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Maeda, Daisuke; Ozawa, Masa-aki; Odoi, Keisuke [Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507 (Japan); Aoki, Isao; Otomo, Akira [National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-ku, Kobe 651-2492 (Japan); Yokoyama, Shiyoshi, E-mail: s-yokoyama@cm.kyushu-u.ac.jp [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan)

    2015-09-21

    Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that of the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.

  3. Substrate Integrated Evanescent Filters Employing Coaxial Stubs

    DEFF Research Database (Denmark)

    Zhurbenko, Vitaliy

    2015-01-01

    Evanescent mode substrate integrated waveguide (SIW) is one of the promising technologies for design of light-weight low-cost microwave components. Traditional realization methods used in the standard evanescent waveguide technology are often not directly applicable to SIW due to dielectric filli...... of the microwave filter are discussed. The approach is useful in applications where a sharp roll-off at the upper stop-band is required....

  4. Evanescent fields of laser written waveguides

    Science.gov (United States)

    Jukić, Dario; Pohl, Thomas; Götte, Jörg B.

    2015-03-01

    We investigate the evanescent field at the surface of laser written waveguides. The waveguides are written by a direct femtosecond laser writing process into fused silica, which is then sanded down to expose the guiding layer. These waveguides support eigenmodes which have an evanescent field reaching into the vacuum above the waveguide. We study the governing wave equations and present solution for the fundamental eigenmodes of the modified waveguides.

  5. Beam tests of ATLAS SCT silicon strip detector modules

    Czech Academy of Sciences Publication Activity Database

    Campabadal, F.; Fleta, C.; Key, M.; Böhm, Jan; Mikeštíková, Marcela; Šťastný, Jan

    2005-01-01

    Roč. 538, - (2005), s. 384-407 ISSN 0168-9002 R&D Projects: GA MŠk(CZ) 1P04LA212 Institutional research plan: CEZ:AV0Z10100502 Keywords : ATLAS * silicon * micro-strip * beam * test Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.224, year: 2005

  6. Hydrogenated amorphous silicon coatings may modulate gingival cell response

    Science.gov (United States)

    Mussano, F.; Genova, T.; Laurenti, M.; Munaron, L.; Pirri, C. F.; Rivolo, P.; Carossa, S.; Mandracci, P.

    2018-04-01

    Silicon-based materials present a high potential for dental implant applications, since silicon has been proven necessary for the correct bone formation in animals and humans. Notably, the addition of silicon is effective to enhance the bioactivity of hydroxyapatite and other biomaterials. The present work aims to expand the knowledge of the role exerted by hydrogen in the biological interaction of silicon-based materials, comparing two hydrogenated amorphous silicon coatings, with different hydrogen content, as means to enhance soft tissue cell adhesion. To accomplish this task, the films were produced by plasma enhanced chemical vapor deposition (PECVD) on titanium substrates and their surface composition and hydrogen content were analyzed by means of X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectrophotometry (FTIR) respectively. The surface energy and roughness were measured through optical contact angle analysis (OCA) and high-resolution mechanical profilometry respectively. Coated surfaces showed a slightly lower roughness, compared to bare titanium samples, regardless of the hydrogen content. The early cell responses of human keratinocytes and fibroblasts were tested on the above mentioned surface modifications, in terms of cell adhesion, viability and morphometrical assessment. Films with lower hydrogen content were endowed with a surface energy comparable to the titanium surfaces. Films with higher hydrogen incorporation displayed a lower surface oxidation and a considerably lower surface energy, compared to the less hydrogenated samples. As regards mean cell area and focal adhesion density, both a-Si coatings influenced fibroblasts, but had no significant effects on keratinocytes. On the contrary, hydrogen-rich films increased manifolds the adhesion and viability of keratinocytes, but not of fibroblasts, suggesting a selective biological effect on these cells.

  7. A 240-channel thick film multi-chip module for readout of silicon drift detectors

    International Nuclear Information System (INIS)

    Lynn, D.; Bellwied, R.; Beuttenmueller, R.; Caines, H.; Chen, W.; DiMassimo, D.; Dyke, H.; Elliott, D.; Grau, M.; Hoffmann, G.W.; Humanic, T.; Jensen, P.; Kleinfelder, S.A.; Kotov, I.; Kraner, H.W.; Kuczewski, P.; Leonhardt, B.; Li, Z.; Liaw, C.J.; LoCurto, G.; Middelkamp, P.; Minor, R.; Mazeh, N.; Nehmeh, S.; O'Conner, P.; Ott, G.; Pandey, S.U.; Pruneau, C.; Pinelli, D.; Radeka, V.; Rescia, S.; Rykov, V.; Schambach, J.; Sedlmeir, J.; Sheen, J.; Soja, B.; Stephani, D.; Sugarbaker, E.; Takahashi, J.; Wilson, K.

    2000-01-01

    We have developed a thick film multi-chip module for readout of silicon drift (or low capacitance ∼200 fF) detectors. Main elements of the module include a custom 16-channel NPN-BJT preamplifier-shaper (PASA) and a custom 16-channel CMOS Switched Capacitor Array (SCA). The primary design criteria of the module were the minimizations of the power (12 mW/channel), noise (ENC=490 e - rms), size (20.5 mmx63 mm), and radiation length (1.4%). We will discuss various aspects of the PASA design, with emphasis on the preamplifier feedback network. The SCA is a modification of an integrated circuit that has been previously described [1]; its design features specific to its application in the SVT (Silicon Vertex Tracker in the STAR experiment at RHIC) will be discussed. The 240-channel multi-chip module is a circuit with five metal layers fabricated in thick film technology on a beryllia substrate and contains 35 custom and commercial integrated circuits. It has been recently integrated with silicon drift detectors in both a prototype system assembly for the SVT and a silicon drift array for the E896 experiment at the Alternating Gradient Synchrotron at the Brookhaven National Laboratory. We will discuss features of the module's design and fabrication, report the test results, and emphasize its performance both on the bench and under experimental conditions

  8. Thermal conductivity engineering in width-modulated silicon nanowires and thermoelectric efficiency enhancement

    Science.gov (United States)

    Zianni, Xanthippi

    2018-03-01

    Width-modulated nanowires have been proposed as efficient thermoelectric materials. Here, the electron and phonon transport properties and the thermoelectric efficiency are discussed for dimensions above the quantum confinement regime. The thermal conductivity decreases dramatically in the presence of thin constrictions due to their ballistic thermal resistance. It shows a scaling behavior upon the width-modulation rate that allows for thermal conductivity engineering. The electron conductivity also decreases due to enhanced boundary scattering by the constrictions. The effect of boundary scattering is weaker for electrons than for phonons and the overall thermoelectric efficiency is enhanced. A ZT enhancement by a factor of 20-30 is predicted for width-modulated nanowires compared to bulk silicon. Our findings indicate that width-modulated nanostructures are promising for developing silicon nanostructures with high thermoelectric efficiency.

  9. Label-free silicon photonic biosensor system with integrated detector array

    Science.gov (United States)

    Yan, Rongjin; Mestas, Santano P.; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S.

    2010-01-01

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide’s upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip. PMID:19606292

  10. Label-free silicon photonic biosensor system with integrated detector array.

    Science.gov (United States)

    Yan, Rongjin; Mestas, Santano P; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S; Lear, Kevin L

    2009-08-07

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide's upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip.

  11. Self-phase-modulation induced spectral broadening in silicon waveguides

    Science.gov (United States)

    Boyraz, Ozdal; Indukuri, Tejaswi; Jalali, Bahram

    2004-03-01

    The prospect for generating supercontinuum pulses on a silicon chip is studied. Using ~4ps optical pulses with 2.2GW/cm2 peak power, a 2 fold spectral broadening is obtained. Theoretical calculations, that include the effect of two-photon-absorption, indicate up to 5 times spectral broadening is achievable at 10x higher peak powers. Representing a nonlinear loss mechanism at high intensities, TPA limits the maximum optical bandwidth that can be generated.

  12. Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption

    Science.gov (United States)

    Xin, Maoqing; Danner, Aaron J.; Eng Png, Ching; Thor Lim, Soon

    2009-04-01

    This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 µW/µm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 µm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300 MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration.

  13. Exploiting evanescent-wave amplification for subwavelength low-contrast particle detection

    Science.gov (United States)

    Roy, S.; Pereira, S. F.; Urbach, H. P.; Wei, Xukang; El Gawhary, O.

    2017-07-01

    The classical problem of subwavelength particle detection on a flat surface is especially challenging when the refractive index of the particle is close to that of the substrate. We demonstrate a method to improve the detection ability several times for such a situation, by enhancing the "forbidden" evanescent waves in the substrate using the principle of super-resolution with evanescent waves amplification. The working mechanism of the system and experimental validation from a design with a thin single dielectric layer is presented. The resulting system is a simple but complete example of evanescent-wave generation, amplification, and the consequent modulation of the far field. This principle can have far reaching impact in the field of particle detection in several applications ranging from contamination control to interferometric scattering microscopy for biological samples.

  14. Fast wave evanescence in filamentary boundary plasmas

    International Nuclear Information System (INIS)

    Myra, J. R.

    2014-01-01

    Radio frequency waves for heating and current drive of plasmas in tokamaks and other magnetic confinement devices must first traverse the scrape-off-layer (SOL) before they can be put to their intended use. The SOL plasma is strongly turbulent and intermittent in space and time. These turbulent properties of the SOL, which are not routinely taken into account in wave propagation codes, can have an important effect on the coupling of waves through an evanescent SOL or edge plasma region. The effective scale length for fast wave (FW) evanescence in the presence of short-scale field-aligned filamentary plasma turbulence is addressed in this paper. It is shown that although the FW wavelength or evanescent scale length is long compared with the dimensions of the turbulence, the FW does not simply average over the turbulent density; rather, the average is over the exponentiation rate. Implications for practical situations are discussed

  15. Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD

    International Nuclear Information System (INIS)

    Matsumoto, Y.; Godavarthi, S.; Ortega, M.; Sanchez, V.; Velumani, S.; Mallick, P.S.

    2011-01-01

    Different issues related to controlling size of nanocrystalline silicon (nc-Si) embedded in hydrogenated amorphous silicon oxide (a-SiO x :H) deposited by catalytic chemical vapor deposition (Cat-CVD) have been reported. Films were deposited using tantalum (Ta) and tungsten (W) filaments and it is observed that films deposited using tantalum filament resulted in good control on the properties. The parameters which can affect the size of nc-Si domains have been studied which include hydrogen flow rate, catalyst and substrate temperatures. The deposited samples are characterized by X-ray diffraction, HRTEM and micro-Raman spectroscopy, for determining the size of the deposited nc-Si. The crystallite formation starts for Ta-catalyst around the temperature of 1700 o C.

  16. Decade of PV Industry R and D Advances in Silicon Module Manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Symko-Davis, M.; Mitchell, R.L.; Witt, C.E.; Thomas, H.P. [National Renewable Energy Laboratory; King, R.[U.S. Department of Energy; Ruby, D.S. [Sandia National Laboratories

    2001-01-18

    The US Photovoltaic (PV) industry has made significant technical advances in crystalline silicon (Si) module manufacturing through the PV Manufacturing R and D Project during the past decade. Funded Si technologies in this project have been Czochralski, cast polycrystalline, edge-defined film-fed growth (EFG) ribbon, string ribbon, and Si-film. Specific R and D Si module-manufacturing categories that have shown technical growth and will be discussed are in crystal growth and processing, wafering, cell fabrication, and module manufacturing. These R and D advancements since 1992 have contributed to a 30% decrease in PV manufacturing costs and stimulated a sevenfold increase in PV production capacity.

  17. Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

    Science.gov (United States)

    Fu, Enjin

    Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier

  18. Progress in amorphous silicon based large-area multijunction modules

    Science.gov (United States)

    Carlson, D. E.; Arya, R. R.; Bennett, M.; Chen, L.-F.; Jansen, K.; Li, Y.-M.; Maley, N.; Morris, J.; Newton, J.; Oswald, R. S.; Rajan, K.; Vezzetti, D.; Willing, F.; Yang, L.

    1996-01-01

    Solarex, a business unit of Amoco/Enron Solar, is scaling up its a-Si:H/a-SiGe:H tandem device technology for the production of 8 ft2 modules. The current R&D effort is focused on improving the performance, reliability and cost-effectiveness of the tandem junction technology by systematically optimizing the materials and interfaces in small-area single- and tandem junction cells. Average initial conversion efficiencies of 8.8% at 85% yield have been obtained in pilot production runs with 4 ft2 tandem modules.

  19. Overview of CMS robotic silicon module assembly hardware based on Aerotech Gantry Positioning system.

    CERN Multimedia

    Honma, Alan

    1999-01-01

    The goal of the robotic silicon module assembly pilot project is to fully automate the gluing and pick and placement of silicon sensors and front-end hybrid onto a carbon-fibre frame. The basis for thesystem is the Aerotech Gantry Positioning System (AGS10000) machineshown in the centre of the picture. To the left is the PC which contains the controller card and runs the user interface. To the rightis the rack of associated electronics which interfaces with the CERNbuilt tooling and vacuum chuck system.

  20. Thin film silicon modules: contributions to low cost industrial production

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A. [Universite de Neuchatel, Neuchatel (Switzerland)

    2005-07-01

    This final report for the Swiss Federal Office of Energy (SFOE) discusses the research work done during the two-year period 2003-04 at the Thin-Film Solar Cell Laboratory of the Institute of Microtechnology (IMT) at the University of Neuchatel in Switzerland. The transition from fundamental research work to concrete industrialisation issues, and changes within the research staff are discussed. The main results of the work done are presented, including basic techniques for the production of p-i-n solar cells on glass, new technologies for the deposition of n-i-p cells on low-cost flexible substrates and the optimisation of zinc oxide deposition methods. The key role played by substrate chemistry and roughness in the nucleation and growth of micro-crystalline silicon layers is looked at and diagnostic tools for the analysis of micro-crystalline solar cells are discussed.

  1. LIFE CYCLE DESIGN OF AMORPHOUS SILICON PHOTOVOLTAIC MODULES

    Science.gov (United States)

    The life cycle design framework was applied to photovoltaic module design. The primary objective of this project was to develop and evaluate design metrics for assessing and guiding the Improvement of PV product systems. Two metrics were used to assess life cycle energy perform...

  2. THE INFLUENCE OF SUNLIGHT AND WIND ON THE POLYCRYSTALLINE SILICON MODULES

    Directory of Open Access Journals (Sweden)

    Piotr Lichograj

    2016-12-01

    Full Text Available Changing conditions have a significant impact on the efficiency and durability of photovoltaic cells. On photovoltaic modules have also influence such external factors as temperature of the module, which changes during the long exposure to light radiation, wind, pollution and the frequency of rainfall. Parameters of PV modules provided by the manufacturers differ significantly from the results achieved under natural conditions. This work presents the laboratory study on the impact of temperature of the polycrystalline silicon module to the change of generated voltage tested with no load. Research confirms the correlation of temperature increase during the long exposure to light radiation with a voltage drop. At the same time simulation of wind causes the cooling of the module and increase the voltage circuit. Further development of research on the effects of environmental conditions will allow for accurate placement optimization of photovoltaic farms.

  3. Potential-Induced Degradation-Delamination Mode in Crystalline Silicon Modules: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Hacke, Peter L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kempe, Michael D [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Wohlgemuth, John [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Li, Jichao [SunPower Corporation; Shen, Yu-Chen [SunPower Corporation

    2018-03-21

    A test sequence producing potential-induced degradation-delamination (PID-d) in crystalline silicon modules has been tested and found comparable under visual inspection to cell/encapsulant delamination seen in some fielded modules. Four commercial modules were put through this sequence, 85 degrees C, 85%, 1000 h damp heat, followed by an intensive PID stress sequence of 72 degrees C, 95% RH, and -1000 V, with the module face grounded using a metal foil. The 60 cell c-Si modules exhibiting the highest current transfer (4.4 center dot 10-4 A) exhibited PID-d at the first inspection after 156 h of PID stress. Effects promoting PID-d are reduced adhesion caused by damp heat, sodium migration further reducing adhesion to the cells, and gaseous products of electrochemical reactions driven by the applied system voltage. A new work item proposal for an IEC test standard to evaluate for PID-d is anticipated.

  4. Modulation of thermal conductivity in kinked silicon nanowires: phonon interchanging and pinching effects.

    Science.gov (United States)

    Jiang, Jin-Wu; Yang, Nuo; Wang, Bing-Shen; Rabczuk, Timon

    2013-04-10

    We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at room temperature. The temperature dependence of the reduction is also calculated. By calculating phonon polarization vectors, two mechanisms are found to be responsible for the reduced thermal conductivity: (1) the interchanging effect between the longitudinal and transverse phonon modes and (2) the pinching effect, that is, a new type of localization, for the twisting and transverse phonon modes in the kinked silicon nanowires. Our work demonstrates that the phonon interchanging and pinching effects, induced by kinking, are brand-new and effective ways in modulating heat transfer in nanowires, which enables the kinked silicon nanowires to be a promising candidate for thermoelectric materials.

  5. High-speed and efficient silicon modulator based on forward-biased pin diodes

    Directory of Open Access Journals (Sweden)

    Suguru eAkiyama

    2014-11-01

    Full Text Available Silicon modulators, which use the free-carrier-plasma effect, were studied, both analytically and experimentally. It was demonstrated that the loss-efficiency product, a-VpL, was a suitable figure of merit for silicon modulators that enabled their intrinsic properties to be compared. Subsequently, the dependence of VpL on frequency was expressed by using the electrical parameters of a phase shifter when the modulator was operated by assuming a simple driving configuration. A diode-based modulator operated in forward biased mode was expected from analyses to provide more efficient operation than that in reversed mode at high frequencies due to its large capacitance. We obtained an a-VpL of 9.5 dB-V at 12.5 GHz in experiments by using the fabricated phase shifter with pin diodes operated in forward biased mode. This a-VpL was comparable to the best modulators operated in depletion mode. The modulator exhibited a clear eye opening at 56 Gb/s operated by 2 V peak-to-peak signals that was achieved by incorporating such a phase shifter into a ring resonator.

  6. Sensitivity enhancement in evanescent optical waveguidesensors

    NARCIS (Netherlands)

    Veldhuis, G.J.; Parriaux, O.; Hoekstra, Hugo; Lambeck, Paul

    2000-01-01

    It is shown, that the sensitivity of the effective refractive index on the cladding index in evanescent optical waveguide sensors, can be larger than unity. This implies that the attenuation of a guided wave propagating in a waveguide immersed in an absorptive medium can be made larger than that of

  7. Quality Assurance and Performance Tests of Silicon Detector Modules for the CMS/Tracker

    CERN Document Server

    Dragicevic, Marko

    2005-01-01

    After providing a short overview of the LHC accelerator, the CMS experiment and it’s various detector systems, we will have an in-depth look on silicon semiconductor particle detectors. Various important aspects like theoretical principles, radiation damage and actual design considerations are discussed and the quality assurance scheme for the sensor and module production is introduced. A strong emphasis is made on the ARC module teststand which was set up and operated be the author. Another important aspect in establishing a good quality assurance scheme is flexibility and keeping an eye on the unexpected. At one such occasion, the author had to gather custom made test equipment, to investigate certain effects in silicon sensors manufactured by ST Microelectronics. Conclusions from these measurement could only be drawn very cautiously, as the manufacturing process and many of its subtle changes, remained a well kept secret of the company. Nevertheless, the investigations proofed to be useful and ST Microel...

  8. Innovative Characterization of Amorphous and Thin-Film Silicon for Improved Module Performance: 1 February 2005 - 31 July 2008

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P. C.; Williams, G. A.

    2009-09-01

    Electron spin resonance and nuclear magnetic resonance was done on amorphous silicon samples (modules with a-Si:H and a-SixGe1-x:H intrinsic layer) to study defects that contribute to Staebler-Wronski effect.

  9. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2007-08-01

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  10. Electrical production testing of the D0 Silicon microstrip tracker detector modules

    Energy Technology Data Exchange (ETDEWEB)

    D0, SMT Production Testing Group; /Fermilab

    2006-03-01

    The D0 Silicon Microstrip Tracker (SMT) is the innermost system of the D0 detector in Run 2. It consists of 912 detector units, corresponding to 5 different types of assemblies, which add up to a system with 792,576 readout channels. The task entrusted to the Production Testing group was to thoroughly debug, test and grade each detector module before its installation in the tracker. This note describes the production testing sequence and the procedures by which the detector modules were electrically tested and characterized at the various stages of their assembly.

  11. A review of manufacturing metrology for improved reliability of silicon photovoltaic modules

    Science.gov (United States)

    Davis, Kristopher O.; Walters, Joseph; Schneller, Eric; Seigneur, Hubert; Brooker, R. Paul; Scardera, Giuseppe; Rodgers, Marianne P.; Mohajeri, Nahid; Shiradkar, Narendra; Dhere, Neelkanth G.; Wohlgemuth, John; Rudack, Andrew C.; Schoenfeld, Winston V.

    2014-10-01

    In this work, the use of manufacturing metrology across the supply chain to improve crystalline silicon (c-Si) photovoltaic (PV) module reliability and durability is addressed. Additionally, an overview and summary of a recent extensive literature survey of relevant measurement techniques aimed at reducing or eliminating the probability of field failures is presented. An assessment of potential gaps is also given, wherein the PV community could benefit from new research and demonstration efforts. This review is divided into three primary areas representing different parts of the c-Si PV supply chain: (1) feedstock production, crystallization and wafering; (2) cell manufacturing; and (3) module manufacturing.

  12. Current and future priorities for mass and material in silicon PV module recycling

    Energy Technology Data Exchange (ETDEWEB)

    Olson, C.L.; Geerligs, L.J.; Goris, M.J.A.A.; Bennett, I.J. [ECN Solar Energy, P.O. Box 1, 1755 ZG Petten (Netherlands); Clyncke, J. [PV CYCLE, Rue Montoyer 23, 1000 Brussels (Belgium)

    2013-10-15

    A full description of the state-of-the-art PV recycling methods and their rationale is presented, which discusses the quality of the recycled materials and the fate of the substances which end up in the landfill. The aim is to flag the PV module components currently not recycled, which may have a priority in terms of their embedded energy, chemical nature or scarcity, for the next evolution of recycling. The sustainability of different recycling options, emerging in the literature on electronic waste recycling, and the possible improvement of the environmental footprint of silicon PV modules, will be discussed.

  13. 12.5 Gb/s carrier-injection silicon Mach—Zehnder optical modulator

    International Nuclear Information System (INIS)

    Chen Hongtao; Ding Jianfeng; Yang Lin

    2012-01-01

    We demonstrate a 12.5 Gb/s carrier-injection silicon Mach—Zehnder optical modulator. Under a nonreturn-zero (NRZ) pre-emphasized electrical drive signal with voltage swing of 6.3 V and forward bias of 0.7 V, the eye is clearly opened with an extinction ratio of 8.4 dB. The device exhibits high modulation efficiency, with a figure of merit V π L of 0.036 V·mm. (semiconductor devices)

  14. Parallel Connection of Silicon Carbide MOSFETs for Multichip Power Modules

    DEFF Research Database (Denmark)

    Li, Helong

    challenges from the manufacture and application points of view. The less mature manufacture process limits the yield and the single die size of the SiC MOSFETs, which results a smaller current capability of a single SiC MOSFET die. Consequently, in high current application, the paralleled connections of Si...... connections for the paralleled dies are presented and the source of the transient current imbalance is concluded. To mitigate the transient current imbalance in the traditional DBC layout, a novel DBC layout with split output is proposed. First, the working mechanism of the split output topology is studied...... the current sharing performance among the paralleled SiC MOSFET dies in the power module. The proposed DBC layout is not only limited for SiC MOSFETs, but also for Si IGBTs and other voltage controlled devices. of the circuit mismatch on the paralleled connection of SiC MOSFETs. It reveals the circuit...

  15. Production and Quality Assurance of Detector Modules for the LHCb Silicon Tracker

    CERN Document Server

    Volyanskyy, D; Agari, M; Bauer, C; Blouw, J; Hofmann, W; Löchner, S; Maciuc, F; Schmelling, M; Smale, N; Schwingenheuer, B; Voss, H; Borysova, M; Ohrimenko, O; Pugatch, V; Yakovenko, V; Bay, A; Bettler, M O; Fauland, P; Frei, R; Nicolas, L; Knecht, M; Perrin, A; Schneider, O; Tran, M T; Van Hunen, J; Vervink, K; Adeva, B; Esperante-Pereira, D; Gallas, A; Fungueirino-Pazos, J L; Lois, C; Pazos-Alvarez, A; Pérez-Trigo, E; Pló-Casasus, M; Vázquez, P; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Lehner, F; Needham, M; Sakhelashvili, T; Steiner, S; Straumann, U; Van Tilburg, J; Vollhardt, A; Wenger, A

    2007-01-01

    The LHCb experiment, which is currently under construction at the Large Hadron Collider~(CERN, Geneva), is designed to study $CP$ violation and find rare decays in the $B$ meson system. To achieve the physics goals the LHCb detector must have excellent tracking performance. An important element of the LHCb tracking system is the Silicon Tracker, which covers a sensitive surface of about 12~m$^2$ with silicon microstrip detectors and includes about 272k readout channels. It uses up to 132~cm long detector modules with readout strips of up to 38~cm in length and up to 57~cm long Kapton interconnects in between sensors and readout hybrids. The production of detector modules has been completed recently and the detector is currently under installation. A rigorous quality assurance programme has been performed to ensure that the detector modules meet the mechanical and electrical requirements and study their various characteristics. In this paper, the detector design, the module production steps, and the module qua...

  16. System tests with silicon strip module prototypes for the Phase-2-upgrade of the CMS tracker

    Energy Technology Data Exchange (ETDEWEB)

    Feld, Lutz; Karpinski, Waclaw; Klein, Katja; Preuten, Marius [I. Physikalisches Institut B, RWTH Aachen University (Germany)

    2016-07-01

    To prepare the CMS experiment for the High Luminosity LHC and its instantaneous luminosity of 5 . 10{sup 34} cm{sup -2}s{sup -1}, in the Long Shutdown 3 (around 2024) the CMS Silicon Tracker will be replaced. The Silicon Strip Modules for the new Tracker will host two vertically stacked sensors. The combination of hit information from both sensors will allow the estimation of the transverse momentum (p{sub T}) of charged particles in the module front-end. This can be used to identify hits from potential interesting high-p{sub T} tracks (above 2 GeV) for the first trigger level. The CMS Binary Chip (CBC) provides the analogue readout of two sensors and a digital section, into which the momentum discrimination is integrated. The modules will host a new DC-DC converter chain, which will allow individual powering of each module. First measurements with early prototypes on the interplay between DC-DC powering and the read-out functions of the module are presented in this talk.

  17. Beam loss studies on silicon strip detector modules for the CMS experiment

    CERN Document Server

    Fahrer, Manuel

    2006-01-01

    The large beam energy of the LHC demands for a save beam abort system. Nevertheless, failures cannot be excluded with last assurance and are predicted to occur once per year. As the CMS experiment is placed in the neighboured LHC octant, it is affected by such events. The effect of an unsynchronized beam abort on the silicon strip modules of the CMS tracking detector has been investigated in this thesis by performing one accelerator and two lab experiments. The dynamical behaviour of operational parameters of modules and components has been recorded during simulated beam loss events to be able to disentangle the reasons of possible damages. The first study with high intensive proton bunches at the CERN PS ensured the robustness of the module design against beam losses. A further lab experiment with pulsed IR LEDs clarified the physical and electrical processes during such events. The silicon strip sensors on a module are protected against beam losses by a part of the module design that originally has not been...

  18. Investigation of the degradation of a thin-film hydrogenated amorphous silicon photovoltaic module

    Energy Technology Data Exchange (ETDEWEB)

    van Dyk, E.E.; Audouard, A.; Meyer, E.L. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Woolard, C.D. [Department of Chemistry, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2007-01-23

    The degradation of a thin-film hydrogenated single-junction amorphous silicon (a-Si:H) photovoltaic (PV) module has been studied. We investigated the different modes of electrical and physical degradation of a-Si:H PV modules by employing a degradation and failure assessment procedure used in conjunction with analytical techniques, including, scanning electron microscopy (SEM) and thermogravimetry. This paper reveals that due to their thickness, thin films are very sensitive to the type of degradation observed. Moreover, this paper deals with the problems associated with the module encapsulant, poly(ethylene-co-vinylacetate) (EVA). The main objective of this study was to establish the influence of outdoor environmental conditions on the performance of a thin-film PV module comprising a-Si:H single-junction cells. (author)

  19. The all-optical modulator in dielectric-loaded waveguide with graphene-silicon heterojunction structure

    Science.gov (United States)

    Sun, Feiying; Xia, Liangping; Nie, Changbin; Shen, Jun; Zou, Yixuan; Cheng, Guiyu; Wu, Hao; Zhang, Yong; Wei, Dongshan; Yin, Shaoyun; Du, Chunlei

    2018-04-01

    All-optical modulators based on graphene show great promise for on-chip optical interconnects. However, the modulation performance of all-optical modulators is usually based on the interaction between graphene and the fiber, limiting their potential in high integration. Based on this point, an all-optical modulator in a dielectric-loaded waveguide (DLW) with a graphene-silicon heterojunction structure (GSH) is proposed. The DLW raises the waveguide mode, which provides a strong light-graphene interaction. Sufficient tuning of the graphene Fermi energy beyond the Pauli blocking effect is obtained with the presented GSH structure. Under the modulation light with a wavelength of 532 nm and a power of 60 mW, a modulation efficiency of 0.0275 dB µm-1 is achieved for light with a communication wavelength of 1.55 µm in the experiment. This modulator has the advantage of having a compact footprint, which may make it a candidate for achieving a highly integrated all-optical modulator.

  20. On the propagation speed of evanescent modes

    Energy Technology Data Exchange (ETDEWEB)

    Barbero, A.P.L. [State Univ. of Campinas, Campinas (Brazil)]|[Universidad Federal Fluminense (Brazil); Hernandez Figueroa, H.E. [State Univ. of Campinas, Campinas (Brazil); Recami, E. [Istituto Nazionale di Fisica Nucleare, Milan (Italy)]|[Bergamo Univ., Bergamo (Italy). Fac. di Ingegneria]|[State Univ. of Campinas, Campinas (Brazil)

    2000-03-01

    The group velocity of evanescent waves (in undersized waveguides, for instance) was theoretically predicted, and has been experimentally verified, to be superluminal. By contrast, it is known that the precursor speed in vacuum cannot be larger than c. This paper, by computer simulations based on Maxwell equations only, shows the existence of both phenomena and verifies the actual possibility of superluminal group velocities, without violating the so-called (naive) Einstein causality.

  1. On the propagation speed of evanescent modes

    International Nuclear Information System (INIS)

    Barbero, A.P.L.; Hernandez Figueroa, H.E.; Recami, E.

    2000-03-01

    The group velocity of evanescent waves (in undersized waveguides, for instance) was theoretically predicted, and has been experimentally verified, to be superluminal. By contrast, it is known that the precursor speed in vacuum cannot be larger than c. This paper, by computer simulations based on Maxwell equations only, shows the existence of both phenomena and verifies the actual possibility of superluminal group velocities, without violating the so-called (naive) Einstein causality

  2. Testbeam studies of silicon microstrip sensor architectures modified to facilitate detector module mass production

    CERN Document Server

    Poley, Anne-luise; The ATLAS collaboration

    2016-01-01

    For the High Luminosity Upgrade of the LHC, the Inner Detector of the ATLAS detector will be replaced by an all-silicon tracker, consisting of pixel and strip sensor detector modules. Silicon strip sensors are being developed to meet both the tracking requirements in a high particle density environment and constraints imposed by the construction process. Several thousand wire bonds per module, connecting sensor strips and readout channels, need to be produced with high reliability and speed, requiring wire bond pads of sufficient size on each sensor strip. These sensor bond pads change the local sensor architecture and the resulting electric field and thus alter the sensor performance. These sensor regions with bond pads, which account for up to 10 % of a silicon strip sensor, were studied using both an electron beam at DESY and a micro-focused X-ray beam at the Diamond Light Source. This contribution presents measurements of the effective strip width in sensor regions where the structure of standard parallel...

  3. Electro-optical modulator in a polymerinfiltrated silicon slotted photonic crystal waveguide heterostructure resonator.

    Science.gov (United States)

    Wülbern, Jan Hendrik; Petrov, Alexander; Eich, Manfred

    2009-01-05

    We present a novel concept of a compact, ultra fast electro-optic modulator, based on photonic crystal resonator structures that can be realized in two dimensional photonic crystal slabs of silicon as core material employing a nonlinear optical polymer as infiltration and cladding material. The novel concept is to combine a photonic crystal heterostructure cavity with a slotted defect waveguide. The photonic crystal lattice can be used as a distributed electrode for the application of a modulation signal. An electrical contact is hence provided while the optical wave is kept isolated from the lossy metal electrodes. Thereby, well known disadvantages of segmented electrode designs such as excessive scattering are avoided. The optical field enhancement in the slotted region increases the nonlinear interaction with an external electric field resulting in an envisaged switching voltage of approximately 1 V at modulation speeds up to 100 GHz.

  4. High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

    Directory of Open Access Journals (Sweden)

    Graham Trevor Reed

    2014-12-01

    Full Text Available This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

  5. Development and implementation of quality control strategies for CMS silicon strip tracker modules

    CERN Document Server

    Dirkes, Guido

    The LHC will explore physics at the energy frontier and will address many open questions in particle physics, like the search for the Higgs boson or Supersymmetry. For both high resolution track and vertex reconstruction is vital. The CMS silicon tracker consists of 15232 detector modules. Production and assembly of these will span two and a half years period, during which the quality control chain has to ensure functionality and reliability of the modules produced. The CMS group in Karlsruhe will produce and qualify 1600 modules. Therefore automatic test systems are developed and test strategies are worked out. Already during the RnD phase, first prototype tests were performed and some weak points of the design were uncovered. Two test stations are built. One focuses on a fast functionality test, including an active thermal cycle. The other focuses on debugging and repair requirements, including additional test options with lasers, radioactive sources, probes and infrared LEDs. For quality control measuremen...

  6. High-silicon 238PuO2 fuel characterization study: Half module impact tests

    International Nuclear Information System (INIS)

    Reimus, M.A.H.

    1997-01-01

    The General-Purpose Heat Source (GPHS) provides power for space missions by transmitting the heat of [sup 238]Pu decay to an array of thermoelectric elements. The modular GPHS design was developed to address both survivability during launch abort and return from orbit. Previous testing conducted in support of the Galileo and Ulysses missions documented the response of GPHSs to a variety of fragment- impact, aging, atmospheric reentry, and Earth-impact conditions. The evaluations documented in this report are part of an ongoing program to determine the effect of fuel impurities on the response of the heat source to conditions baselined during the Galileo/Ulysses test program. In the first two tests in this series, encapsulated GPHS fuel pellets containing high levels of silicon were aged, loaded into GPHS module halves, and impacted against steel plates. The results show no significant differences between the response of these capsules and the behavior of relatively low-silicon fuel pellets tested previously

  7. In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    We analyze the degradation of multi-crystalline silicon photovoltaic modules undergoing simultaneous thermal, mechanical, and humidity-freeze stress testing to develop a dark environmental chamber in-situ measurement procedure for determining module power loss. We analyze dark I-V curves measured...

  8. Assembly procedure of the module (half-stave) of the ALICE Silicon Pixel Detector

    CERN Document Server

    Caselle, M; Antinori, F; Burns, M; Campbell, M; Chochula, P; Dinapoli, R; Elia, D; Formenti, F; Fini, R A; Ghidini, B; Kluge, A; Lenti, V; Manzari, V; Meddi, F; Morel, M; Navach, F; Nilsson, P; Pepato, Adriano; Riedler, P; Santoro, R; Stefanini, G; Viesti, G; Wyllie, K

    2004-01-01

    The Silicon Pixel Detector (SPD) forms the two innermost layers of the ALICE Inner Tracking System (ITS). The detector includes 1200 readout ASICs, each containing 8192 pixel cells, bump-bonded to Si sensor elements. The thickness of the readout chip and the sensor element is 150mum and 200mum, respectively. Low-mass solutions are implemented for the bus and the mechanical support. In this contribution, we describe the basic module (half-stave) of the two SPD layers and we give an overview of its assembly procedure.

  9. Building integration photovoltaic module with reference to Ghana: using triple junction amorphous silicon

    OpenAIRE

    Essah, Emmanuel Adu

    2010-01-01

    This paper assesses the potential for using building integrated photovoltaic (BIPV) \\ud roof shingles made from triple-junction amorphous silicon (3a-Si) for electrification \\ud and as a roofing material in tropical countries, such as Accra, Ghana. A model roof \\ud was constructed using triple-junction amorphous (3a-Si) PV on one section and \\ud conventional roofing tiles on the other. The performance of the PV module and tiles \\ud were measured, over a range of ambient temperatures and solar...

  10. Characterization of cell mismatch in a multi-crystalline silicon photovoltaic module

    International Nuclear Information System (INIS)

    Crozier, J.L.; Dyk, E.E. van; Vorster, F.J.

    2012-01-01

    In this study the causes and effects of cell mismatch were identified in a multi-crystalline silicon photovoltaic module. Different techniques were used to identify the causes of the mismatch, including Electroluminescence (EL) imaging, Infrared (IR) imaging, current–voltage (I–V) characteristics, worst-case cell determination and Large Area Laser Beam Induced Current (LA-LBIC) scans. In EL images the cracked cells, broken fingers and material defects are visible. The presence of poorly contacted cells results in the formation of hot-spots. LA-LBIC line scans give the relative photoresponse of the cells in the module. However, this technique is limited due to the penetration depth of the laser beam. The worst case cell determination compares the I–V curves of the whole module with the I–V curve of the module with one cell covered, allowing the evaluation of the performance of each cell in a series-connected string. These methods allowed detection of the poorly performing cells in the module. Using all these techniques an overall view of the photoresponse in the cells and their performance is obtained.

  11. Characterization of cell mismatch in a multi-crystalline silicon photovoltaic module

    Energy Technology Data Exchange (ETDEWEB)

    Crozier, J.L., E-mail: s207094248@live.nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van; Vorster, F.J. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    In this study the causes and effects of cell mismatch were identified in a multi-crystalline silicon photovoltaic module. Different techniques were used to identify the causes of the mismatch, including Electroluminescence (EL) imaging, Infrared (IR) imaging, current-voltage (I-V) characteristics, worst-case cell determination and Large Area Laser Beam Induced Current (LA-LBIC) scans. In EL images the cracked cells, broken fingers and material defects are visible. The presence of poorly contacted cells results in the formation of hot-spots. LA-LBIC line scans give the relative photoresponse of the cells in the module. However, this technique is limited due to the penetration depth of the laser beam. The worst case cell determination compares the I-V curves of the whole module with the I-V curve of the module with one cell covered, allowing the evaluation of the performance of each cell in a series-connected string. These methods allowed detection of the poorly performing cells in the module. Using all these techniques an overall view of the photoresponse in the cells and their performance is obtained.

  12. Solar concentrator modules with silicone-on-glass Fresnel lens panels and multijunction cells.

    Science.gov (United States)

    Rumyantsev, Valery D

    2010-04-26

    High-efficiency multijunction (MJ) solar cells, being very expensive to manufacture, should only be used in combination with solar concentrators in terrestrial applications. An essential cost reduction of electric power produced by photovoltaic (PV) installations with MJ cells, may be expected by the creation of highly-effective, but inexpensive, elements for optical concentration and sun tracking. This article is an overview of the corresponding approach under development at the Ioffe Physical Technical Institute. The approach to R&D of the solar PV modules is based on the concepts of sunlight concentration by small-aperture area Fresnel lenses and "all-glass" module design. The small-aperture area lenses are arranged as a panel with silicone-on-glass structure where the glass plate serves as the front surface of a module. In turn, high-efficiency InGaP/(In)GaAs/Ge cells are arranged on a rear module panel mounted on a glass plate which functions as a heat sink and integrated protective cover for the cells. The developed PV modules and sun trackers are characterized by simple design, and are regarded as the prototypes for further commercialization.

  13. Solar concentrator modules with silicone-onglass Fresnel lens panels and multijunction cells.

    Science.gov (United States)

    Rumyantsev, Valery D

    2010-04-26

    High-efficiency multijunction (MJ) solar cells, being very expensive to manufacture, should only be used in combination with solar concentrators in terrestrial applications. An essential cost reduction of electric power produced by photovoltaic (PV) installations with MJ cells, may be expected by the creation of highly-effective, but inexpensive, elements for optical concentration and sun tracking. This article is an overview of the corresponding approach under development at the Ioffe Physical Technical Institute. The approach to R&D of the solar PV modules is based on the concepts of sunlight concentration by small-aperture area Fresnel lenses and "all-glass" module design. The small-aperture area lenses are arranged as a panel with silicone-on-glass structure where the glass plate serves as the front surface of a module. In turn, high-efficiency InGaP/(In)GaAs/Ge cells are arranged on a rear module panel mounted on a glass plate which functions as a heat sink and integrated protective cover for the cells. The developed PV modules and sun trackers are characterized by simple design, and are regarded as the prototypes for further commercialization.

  14. High-Performance Silicon-Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

    Science.gov (United States)

    Romanjek, K.; Vesin, S.; Aixala, L.; Baffie, T.; Bernard-Granger, G.; Dufourcq, J.

    2015-06-01

    Some of the energy used in transportation and industry is lost as heat, often at high-temperatures, during conversion processes. Thermoelectricity enables direct conversion of heat into electricity, and is an alternative to the waste-heat-recovery technology currently used, for example turbines and other types of thermodynamic cycling. The performance of thermoelectric (TE) materials and modules has improved continuously in recent decades. In the high-temperature range ( T hot side > 500°C), silicon-germanium (SiGe) alloys are among the best TE materials reported in the literature. These materials are based on non-toxic elements. The Thermoelectrics Laboratory at CEA (Commissariat à l'Energie Atomique et aux Energies Alternatives) has synthesized n and p-type SiGe pellets, manufactured TE modules, and integrated these into thermoelectric generators (TEG) which were tested on a dedicated bench with hot air as the source of heat. SiGe TE samples of diameter 60 mm were created by spark-plasma sintering. For n-type SiGe doped with phosphorus the peak thermoelectric figure of merit reached ZT = 1.0 at 700°C whereas for p-type SiGe doped with boron the peak was ZT = 0.75 at 700°C. Thus, state-of-the-art conversion efficiency was obtained while also achieving higher production throughput capacity than for competing processes. A standard deviation high reproducibility. A silver-paste-based brazing technique was used to assemble the TE elements into modules. This assembly technique afforded low and repeatable electrical contact resistance (high temperatures (up to 600°C), and thirty 20 mm × 20 mm TE modules were produced and tested. The results revealed the performance was reproducible, with power output reaching 1.9 ± 0.2 W for a 370 degree temperature difference. When the temperature difference was increased to 500°C, electrical power output increased to >3.6 W. An air-water heat exchanger was developed and 30 TE modules were clamped and connected electrically

  15. Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking

    KAUST Repository

    Kobayashi, Eiji

    2017-06-24

    Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar cells increase their operating voltages and thus their conversion efficiencies during light exposure. We found that this performance increase is due to improved passivation of the a-Si:H/c-Si interface and is induced by injected charge carriers (either by light soaking or forward-voltage biasing of the device). Here, we discuss this counterintuitive behavior and establish that: (i) the performance increase is observed in solar cells as well as modules; (ii) this phenomenon requires the presence of doped a-Si:H films, but is independent from whether light is incident from the a-Si:H(p) or the a-Si:H(n) side; (iii) UV and blue photons do not play a role in this effect; (iv) the performance increase can be observed under illumination intensities as low as 20Wm (0.02-sun) and appears to be almost identical in strength when under 1-sun (1000Wm); (v) the underlying physical mechanism likely differs from annealing-induced surface passivation.

  16. Radiation Hard Silicon Photonics Mach-Zehnder Modulator for HEP applications: all-Synopsys Sentaurus™ Pre-Irradiation Simulation

    CERN Document Server

    Cammarata, Simone

    2017-01-01

    Silicon Photonics may well provide the opportunity for new levels of integration between detectors and their readout electronics. This technology is thus being evaluated at CERN in order to assess its suitability for use in particle physics experiments. In order to check the agreement with measurements and the validity of previous device simulations, a pure Synopsys Sentaurus™ simulation of an un-irradiated Mach-Zehnder silicon modulator has been carried out during the Summer Student project.

  17. Technology for the large-scale production of multi-crystalline silicon solar cells and modules

    International Nuclear Information System (INIS)

    Weeber, A.W.; De Moor, H.H.C.

    1997-06-01

    In cooperation with Shell Solar Energy (formerly R and S Renewable Energy Systems) and the Research Institute for Materials of the Catholic University Nijmegen the Netherlands Energy Research Foundation (ECN) plans to develop a competitive technology for the large-scale manufacturing of solar cells and solar modules on the basis of multi-crystalline silicon. The project will be carried out within the framework of the Economy, Ecology and Technology (EET) program of the Dutch ministry of Economic Affairs and the Dutch ministry of Education, Culture and Sciences. The aim of the EET-project is to reduce the costs of a solar module by 50% by means of increasing the conversion efficiency as well as the development of cheap processes for large-scale production

  18. 10 Gb/s operation of photonic crystal silicon optical modulators.

    Science.gov (United States)

    Nguyen, Hong C; Sakai, Yuya; Shinkawa, Mizuki; Ishikura, Norihiro; Baba, Toshihiko

    2011-07-04

    We report the first experimental demonstration of 10 Gb/s modulation in a photonic crystal silicon optical modulator. The device consists of a 200 μm-long SiO2-clad photonic crystal waveguide, with an embedded p-n junction, incorporated into an asymmetric Mach-Zehnder interferometer. The device is integrated on a SOI chip and fabricated by CMOS-compatible processes. With the bias voltage set at 0 V, we measure a V(π)L pseudo-random bit sequence signal. An open eye pattern is observed at bitrates of 10 Gb/s and 2 Gb/s, with and without pre-emphasis of the drive signal, respectively.

  19. 3D silicon neural probe with integrated optical fibers for optogenetic modulation.

    Science.gov (United States)

    Kim, Eric G R; Tu, Hongen; Luo, Hao; Liu, Bin; Bao, Shaowen; Zhang, Jinsheng; Xu, Yong

    2015-07-21

    Optogenetics is a powerful modality for neural modulation that can be useful for a wide array of biomedical studies. Penetrating microelectrode arrays provide a means of recording neural signals with high spatial resolution. It is highly desirable to integrate optics with neural probes to allow for functional study of neural tissue by optogenetics. In this paper, we report the development of a novel 3D neural probe coupled simply and robustly to optical fibers using a hollow parylene tube structure. The device shanks are hollow tubes with rigid silicon tips, allowing the insertion and encasement of optical fibers within the shanks. The position of the fiber tip can be precisely controlled relative to the electrodes on the shank by inherent design features. Preliminary in vivo rat studies indicate that these devices are capable of optogenetic modulation simultaneously with 3D neural signal recording.

  20. Adopting a customer-focused team approach to amorphous silicon multijunction module R ampersand D

    International Nuclear Information System (INIS)

    Peterson, T.M.; Luft, W.

    1993-01-01

    Informed observers of energy markets now generally believe that photovoltaics (PV) will not significantly penetrate the utility bulk-power sector before price and performance approach $50/m 2 for 15% efficient modules in flat-plate systems. Recent progress toward such ''utility grade'' modules using amorphous thin films has been slow. The important amorphous thin-film research issues have been well known for some years. These have not been promptly and conclusively addressed, at least in part, because of inadequate PV industry involvement in academic research. In view of this situation, the authors recently modified their research programs seeking to improve the efficiency of amorphous silicon PV research, conclusively address the key issues, and accelerate commercial introduction of utility-grade products. They began this by seeking ''customer'' (PV industry) specification of research priorities and forming mission-oriented teams to pursue the high-priority issues (customer requirements). This paper describes the process and results to date

  1. Investigating PID Shunting in Polycrystalline Silicon Modules via Multiscale, Multitechnique Characterization

    Energy Technology Data Exchange (ETDEWEB)

    Harvey, Steven P [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Moseley, John [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Norman, Andrew [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Hacke, Peter L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Johnston, Steven [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Al-Jassim, Mowafak M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stokes, Adam [Colorado School of Mines; Gorman, Brian [Colorado School of Mines

    2018-02-27

    We investigated the potential-induced degradation (PID) shunting mechanism in multicrystalline-silicon photovoltaic modules by using a multiscale, multitechnique characterization approach. Both field-stressed modules and laboratory-stressed mini modules were studied. We used photoluminescence, electroluminescence, and dark lock-in thermography imaging to identify degraded areas at the module scale. Small samples were then removed from degraded areas, laser marked, and imaged by scanning electron microscopy. We used simultaneous electron-beam induced current imaging and focused ion beam milling to mark around PID shunts for chemical analysis by time-of-flight secondary-ion mass spectrometry or to isolate individual shunt defects for transmission electron microscopy and atom-probe tomography analysis. By spanning a range of 10 orders of magnitude in size, this approach enabled us to investigate the root-cause mechanisms for PID shunting. We observed a direct correlation between recombination active shunts and sodium content. The sodium content in shunted areas peaks at the SiNX/Si interface and is consistently observed at a concentration of 0.1% to 2% in shunted areas. Analysis of samples subjected to PID recovery, either activated by electron beam or thermal effects only, reveals that recovery of isolated shunts correlates with diffusion of sodium out of the structural defects to the silicon surface. We observed the role of oxygen and chlorine in PID shunting and found that those species - although sometimes present in structural defects where PID shunting was observed - do not play a consistent role in PID shunting.

  2. Monolithically interconnected Silicon-Film{trademark} module technology: Annual technical report, 25 November 1997--24 November 1998

    Energy Technology Data Exchange (ETDEWEB)

    Hall, R.B.; Ford, D.H.; Rand, J.A.; Ingram, A.E.

    1999-11-11

    AstroPower continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin, light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected array. This report summarizes the work carried out over the first year of a three-year, cost-shared contract, which has yielded the following results: Development of a low-cost, insulating, ceramic substrate that provides mechanical support at silicon growth temperatures, is matched to the thermal expansion of silicon, provides the optical properties required for light trapping through random texturing, and can be formed in large areas on a continuous basis. Different deposition techniques have been investigated, and AstroPower has developed deposition processes for the back conductive layer, the p-type silicon layer, and the mechanical/chemical barrier layer. Polycrystalline films of silicon have been grown on ceramics using AstroPower's Silicon-Film{trademark} process. These films are from 50 to 75 {micro}m thick, with columnar grains extending through the thickness of the film. Aspect ratios from 5:1 to 20:1 have been observed in these films.

  3. Characterization of Ni/SnPb-TiW/Pt Flip Chip Interconnections in Silicon Pixel Detector Modules

    CERN Document Server

    Karadzhinova, Aneliya; Härkönen, Jaakko; Luukka, Panja-riina; Mäenpää, Teppo; Tuominen, Eija; Haeggstrom, Edward; Kalliopuska, Juha; Vahanen, Sami; Kassamakov, Ivan

    2014-01-01

    In contemporary high energy physics experiments, silicon detectors are essential for recording the trajectory of new particles generated by multiple simultaneous collisions. Modern particle tracking systems may feature 100 million channels, or pixels, which need to be individually connected to read-out chains. Silicon pixel detectors are typically connected to readout chips by flip-chip bonding using solder bumps. High-quality electro-mechanical flip-chip interconnects minimizes the number of dead read-out channels in the particle tracking system. Furthermore, the detector modules must endure handling during installation and withstand heat generation and cooling during operation. Silicon pixel detector modules were constructed by flip-chip bonding 16 readout chips to a single sensor. Eutectic SnPb solder bumps were deposited on the readout chips and the sensor chips were coated with TiW/Pt thin film UBM (under bump metallization). The modules were assembled at Advacam Ltd, Finland. We studied the uniformity o...

  4. Testbeam evaluation of silicon strip modules for ATLAS Phase - II Strip Tracker Upgrade

    CERN Document Server

    Blue, Andrew; The ATLAS collaboration; Ai, Xiaocong; Allport, Phillip; Arling, Jan-Hendrik; Atkin, Ryan Justin; Bruni, Lucrezia Stella; Carli, Ina; Casse, Gianluigi; Chen, Liejian; Chisholm, Andrew; Cormier, Kyle James Read; Cunningham, William Reilly; Dervan, Paul; Diez Cornell, Sergio; Dolezal, Zdenek; Dopke, Jens; Dreyer, Etienne; Dreyling-Eschweiler, Jan Linus Roderik; Escobar, Carlos; Fabiani, Veronica; Fadeyev, Vitaliy; Fernandez Tejero, Javier; Fleta Corral, Maria Celeste; Gallop, Bruce; Garcia-Argos, Carlos; Greenall, Ashley; Gregor, Ingrid-Maria; Greig, Graham George; Guescini, Francesco; Hara, Kazuhiko; Hauser, Marc Manuel; Huang, Yanping; Hunter, Robert Francis Holub; Keller, John; Klein, Christoph; Kodys, Peter; Koffas, Thomas; Kotek, Zdenek; Kroll, Jiri; Kuehn, Susanne; Lee, Steven Juhyung; Liu, Yi; Lohwasser, Kristin; Meszarosova, Lucia; Mikestikova, Marcela; Mi\\~nano Moya, Mercedes; Mori, Riccardo; Moser, Brian; Nikolopoulos, Konstantinos; Peschke, Richard; Pezzullo, Giuseppe; Phillips, Peter William; Poley, Anne-luise; Queitsch-Maitland, Michaela; Ravotti, Federico; Rodriguez Rodriguez, Daniel

    2018-01-01

    The planned HL-LHC (High Luminosity LHC) is being designed to maximise the physics potential of the LHC with 10 years of operation at instantaneous luminosities of \\mbox{$7.5\\times10^{34}\\;\\mathrm{cm}^{-2}\\mathrm{s}^{-1}$}. A consequence of this increased luminosity is the expected radiation damage requiring the tracking detectors to withstand hadron equivalences to over $1x10^{15}$ 1 MeV neutron equivalent per $cm^{2}$ in the ATLAS Strips system. The silicon strip tracker exploits the concept of modularity. Fast readout electronics, deploying 130nm CMOS front-end electronics are glued on top of a silicon sensor to make a module. The radiation hard n-in-p micro-strip sensors used have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics. A series of tests were performed at the DESY-II test beam facility to investigate the detailed performance of a strip module with both 2.5cm and 5cm length strips before irradiation. The DURANTA telescope was used to obtain a pointing...

  5. A bonding study toward the quality assurance of Belle-II silicon vertex detector modules

    International Nuclear Information System (INIS)

    Kang, K.H.; Jeon, H.B.; Park, H.; Uozumi, S.; Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, T.; Basith, A.K.; Batignani, G.; Bauer, A.; Behera, P.K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.

    2016-01-01

    A silicon vertex detector (SVD) for the Belle-II experiment comprises four layers of double-sided silicon strip detectors (DSSDs), assembled in a ladder-like structure. Each ladder module of the outermost SVD layer has four rectangular and one trapezoidal DSSDs supported by two carbon-fiber ribs. In order to achieve a good signal-to-noise ratio and minimize material budget, a novel chip-on-sensor “Origami” method has been employed for the three rectangular sensors that are sandwiched between the backward rectangular and forward (slanted) trapezoidal sensors. This paper describes the bonding procedures developed for making electrical connections between sensors and signal fan-out flex circuits (i.e., pitch adapters), and between pitch adapters and readout chips as well as the results in terms of the achieved bonding quality and pull force. - Highlights: • Gluing and wire binding for Belle-II SVD are studied. • Gluing robot and Origami module are used. • QA are satisfied in terms of the achieved bonding throughput and the pull force. • Result will be applied for L6 ladder assembly.

  6. A bonding study toward the quality assurance of Belle-II silicon vertex detector modules

    Energy Technology Data Exchange (ETDEWEB)

    Kang, K.H.; Jeon, H.B. [RSRI, Department of Physics, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Park, H., E-mail: sunshine@knu.ac.kr [RSRI, Department of Physics, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Uozumi, S. [RSRI, Department of Physics, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, T. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); and others

    2016-09-21

    A silicon vertex detector (SVD) for the Belle-II experiment comprises four layers of double-sided silicon strip detectors (DSSDs), assembled in a ladder-like structure. Each ladder module of the outermost SVD layer has four rectangular and one trapezoidal DSSDs supported by two carbon-fiber ribs. In order to achieve a good signal-to-noise ratio and minimize material budget, a novel chip-on-sensor “Origami” method has been employed for the three rectangular sensors that are sandwiched between the backward rectangular and forward (slanted) trapezoidal sensors. This paper describes the bonding procedures developed for making electrical connections between sensors and signal fan-out flex circuits (i.e., pitch adapters), and between pitch adapters and readout chips as well as the results in terms of the achieved bonding quality and pull force. - Highlights: • Gluing and wire binding for Belle-II SVD are studied. • Gluing robot and Origami module are used. • QA are satisfied in terms of the achieved bonding throughput and the pull force. • Result will be applied for L6 ladder assembly.

  7. An Evanescent Field Optical Microscope. Scanning probe Microscopy

    NARCIS (Netherlands)

    van Hulst, N.F.; Segerink, Franciscus B.; Bölger, B.; Bölger, B.; Wickramasinghe, H. Kumar

    1991-01-01

    An Evanescent Field Optical Microscope (EFOM) is presented, which employs frustrated total internal reflection on a highly localized scale by means of a sharp dielectric tip. The coupling of the evanescent field to the sub-micrometer probe as a function of probe-sample distance, angle of incidence

  8. Performance of CMS TOB Silicon Detector Modules on a Double Sided Prototype ROD

    CERN Document Server

    Valls, Juan

    2004-01-01

    In this paper we summarize results of the performance of CMS TOB silicon detector modules mounted on the first assembled double-sided rod at CERN. Results are given in terms of noise, noise occupancies, signal to noise ratios and signal efficiencies. The noise figures from the rod optical setup are compared to the single module setup with electrical read out. Both test setups show a small or negligible common mode noise picked up by the modules. Similar noise results are obtained in both setups after full calibration gain values are applied. We measure total noise values of ~1600 electrons in peak mode and ~2600 electrons in deconvolution mode. Signal to noise ratios of the order of 15 (25) for deconvolution (peak) operation modes are found. The noise occupancies on the modules have important implications for the zero suppression algorithms which the CMS Tracker FEDs will use to reduce t he data volume flowing to the DAQ. The detector signal efficiencies and noise occupancies are also shown as a function of t...

  9. All-Optical 40 Gbit/s Regenerative Wavelength Conversion Based on Cross-Phase Modulation in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Hu, Hao; Ji, Hua

    2013-01-01

    We successfully demonstrate all-optical regeneration of a 40 Gbit/s signal based on cross-phase modulation in a silicon nanowire. Bit-error-rate measurements show an average of 1.7dB improvement in receiver sensitivity after the regeneration.......We successfully demonstrate all-optical regeneration of a 40 Gbit/s signal based on cross-phase modulation in a silicon nanowire. Bit-error-rate measurements show an average of 1.7dB improvement in receiver sensitivity after the regeneration....

  10. Development and implementation of quality control strategies for CMS silicon strip tracker modules

    International Nuclear Information System (INIS)

    Dirkes, G.

    2003-01-01

    The CMS group in Karlsruhe is involved in the construction of the silicon trackers end-caps and will produce and qualify the 1 600 modules of ring 5. Therefore automatic test systems for module qualification are developed and test strategies are worked out. For the electrical tests a complete readout system is developed, based on readout modules available within the collaboration and extended by home build modules. These are based on a modular approach with less complex functional units attached to a motherboard and includes key functionalities like clock and trigger generation and their distribution, high and low voltage supply and test signal generation usable with lasers or infrared LEDs. The motherboard is connected to a standard PC, hosting a fast ADC, interface cards to the motherboard and the front-end electronics. Already during the R and D phase of this readout system, first prototype tests were performed and some weak points of the design were uncovered, resulting in changes of the electronics design of the front end hybrids. Two test stations are built. The first one focuses on a fast functionality test, which includes an active thermal cycle with readout at -10 C performed for each individual module. The other test station focuses on debugging and repair requirements. It disposes of sufficient space for a flexible use of the system, including the possibility of additional test options with lasers, radioactive sources, probes and LEDs. For quality control measurements at module level it turned out, that LEDs are of good use: Besides external signal generation by running them in a pulsed way, they can be used for constant illumination of sensors, inducing an artificial leakage current. This led to the discovery of gain losses of complete readout chips induced by shorted AC coupling capacitances of several readout channels, which are called pinholes. Therefore pinholes must be unbonded from the front end preamplifier, which requires faultless

  11. Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking

    KAUST Repository

    Kobayashi, Eiji; De Wolf, Stefaan; Levrat, Jacques; Descoeudres, Antoine; Despeisse, Matthieu; Haug, Franz-Josef; Ballif, Christophe

    2017-01-01

    Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar

  12. Installation of the light tight cover for the SSD modules (the modules are behind the aluminium plate). The silicon sensors are sensitive to light tight, so ambient light will increase the noise and may even damage them.

    CERN Multimedia

    Nooren, G.

    2004-01-01

    Installation of the light tight cover for the SSD modules (the modules are behind the aluminium plate). The silicon sensors are sensitive to light tight , so ambient light will increase the noise and may even damage them.

  13. Multifunctional microstructured polymer films for boosting solar power generation of silicon-based photovoltaic modules.

    Science.gov (United States)

    Leem, Jung Woo; Choi, Minkyu; Yu, Jae Su

    2015-02-04

    We propose two-dimensional periodic conical micrograting structured (MGS) polymer films as a multifunctional layer (i.e., light harvesting and self-cleaning) at the surface of outer polyethylene terephthalate (PET) cover-substrates for boosting the solar power generation in silicon (Si)-based photovoltaic (PV) modules. The surface of ultraviolet-curable NOA63 MGS polymer films fabricated by the soft imprint lithography exhibits a hydrophobic property with water contact angle of ∼121° at no inclination and dynamic advancing/receding water contact angles of ∼132°/111° at the inclination angle of 40°, respectively, which can remove dust particles or contaminants on the surface of PV modules in real outdoor environments (i.e., self-cleaning). The NOA63 MGS film coated on the bare PET leads to the reduction of reflection as well as the enhancement of both the total and diffuse transmissions at wavelengths of 300-1100 nm, indicating lower solar weighted reflectance (RSW) of ∼8.2%, higher solar weighted transmittance (TSW) of ∼93.1%, and considerably improved average haze ratio (HAvg) of ∼88.3% as compared to the bare PET (i.e., RSW ≈ 13.5%, TSW ≈ 86.9%, and HAvg ≈ 9.1%), respectively. Additionally, it shows a relatively good durability at temperatures of ≤160 °C. The resulting Si PV module with the NOA63 MGS/PET has an enhanced power conversion efficiency (PCE) of 13.26% (cf., PCE = 12.55% for the reference PV module with the bare PET) due to the mainly improved short circuit current from 49.35 to 52.01 mA, exhibiting the PCE increment percentage of ∼5.7%. For light incident angle-dependent PV module current-voltage characteristics, superior solar energy conversion properties are also obtained in a broad angle range of 10-80°.

  14. A silicon strip module for the ATLAS inner detector upgrade in the super LHC collider

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Sevilla, S., E-mail: Sergio.Gonzalez.Sevilla@cern.ch [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Barbier, G. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Anghinolfi, F. [European Organization for Nuclear Research, CERN CH-1211, Geneva 23 (Switzerland); Cadoux, F.; Clark, A. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Dabrowski, W.; Dwuznik, M. [AGH University of Sceince and Technology, Faculty of Physics and Applied Computer Science, Krakow (Poland); Ferrere, D. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Garcia, C. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); Ikegami, Y. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Hara, K. [University of Tsukuba, School of Pure and Applied Sciences, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan); Jakobs, K. [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Kaplon, J. [European Organization for Nuclear Research, CERN CH-1211, Geneva 23 (Switzerland); Koriki, T. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Lacasta, C. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); La Marra, D. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Marti i Garcia, S. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); Parzefall, U. [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Pohl, M. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Terada, S. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan)

    2011-04-21

    The ATLAS detector is a general purpose experiment designed to fully exploit the discovery potential of the Large Hadron Collider (LHC) at a nominal luminosity of 10{sup 34} cm{sup -2} s{sup -1}. It is expected that after several years of successful data-taking, the LHC physics program will be extended by increasing the peak luminosity by one order of magnitude. For ATLAS, an upgrade scenario will imply the complete replacement of the Inner Detector (ID), since the current tracker will not provide the required performance due to cumulated radiation damage and a dramatic increase in the detector occupancy. In this paper, a proposal of a double-sided silicon micro-strip module for the short-strip region of the future ATLAS ID is presented. The expected thermal performance based upon detailed FEA simulations is discussed. First electrical results from a prototype version of the next generation readout front-end chips are also shown.

  15. Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

    Science.gov (United States)

    Thomas, O; Yuan, Z L; Shields, A J

    2012-01-24

    Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

  16. Generation of tunable, high repetition rate frequency combs with equalized spectra using carrier injection based silicon modulators

    Science.gov (United States)

    Nagarjun, K. P.; Selvaraja, Shankar Kumar; Supradeepa, V. R.

    2016-03-01

    High repetition-rate frequency combs with tunable repetition rate and carrier frequency are extensively used in areas like Optical communications, Microwave Photonics and Metrology. A common technique for their generation is strong phase modulation of a CW-laser. This is commonly implemented using Lithium-Niobate based modulators. With phase modulation alone, the combs have poor spectral flatness and significant number of missing lines. To overcome this, a complex cascade of multiple intensity and phase modulators are used. A comb generator on Silicon based on these principles is desirable to enable on-chip integration with other functionalities while reducing power consumption and footprint. In this work, we analyse frequency comb generation in carrier injection based Silicon modulators. We observe an interesting effect in these comb generators. Enhanced absorption accompanying carrier injection, an undesirable effect in data modulators, shapes the amplitude here to enable high quality combs from a single modulator. Thus, along with reduced power consumption to generate a specific number of lines, the complexity has also been significantly reduced. We use a drift-diffusion solver and mode solver (Silvaco TCAD) along with Soref-Bennett relations to calculate the variations in refractive indices and absorption of an optimized Silicon PIN - waveguide modulator driven by an unbiased high frequency (10 Ghz) voltage signal. Our simulations demonstrate that with a device length of 1 cm, a driving voltage of 2V and minor shaping with a passive ring-resonator filter, we obtain 37 lines with a flatness better than 5-dB across the band and power consumption an order of magnitude smaller than Lithium-Niobate modulators.

  17. Development of a PET detector module incorporating a silicon photodiode array

    International Nuclear Information System (INIS)

    Rosenfeld, A.B.; Takacs, G.J.; Lerch, M.L.F.; Simmonds, P.E.

    2000-01-01

    Full text: We are developing a new Positron Emission Tomography (PET) detection sub-module with depth of interaction capability. The new sub-module is simple and robust to minimise module assembly complications and is completely independent of photomultiplier tubes. The new sub-module has also been designed to maximise its flexibility for easy sub-module coupling so as to form a complete, customised, detection module to be used in PET scanners dedicated to human brain and breast, and small animal studies. Blue enhanced, silicon 8x8 detector arrays are used to read out the scintillation crystals, and form the basis of the new module. The new detectors were designed by the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong in collaboration with the High Energy Physics Department, University of Melbourne and produced by SPO D etector , Ukraine. Complementing the work on the silicon photodetectors, we have also carried out simulations of the propagation of the scintillation light in the crystals, and the effect of crystal dimensions and surface treatment on the distribution of light detected by the photodiode array. The distribution of light over the photodiodes has then been used to test various algorithms for calculating the point of interaction of the gamma ray in the crystal. Simulations of the light propagation show that for a crystal of dimensions 25mm x 25mm x 3mm, it is possible to determine the point of interaction in 2 dimensions with an average accuracy of just over 0.5mm. The resulting photon distribution detected by the array. The surface treatment, while having a large effect on the light output, does not have a great effect on the accuracy. If these dimensions change to 25mm x 25mm x 6mm then the surface conditions have a greater effect on the accuracy. It is possible however, with careful surface treatment, to achieve an accuracy of around 0.6mm, only marginally worse than the case for the 3mm thick crystal. Gamma ray

  18. Development of a multi-channel front-end electronics module based on ASIC for silicon strip array detectors

    International Nuclear Information System (INIS)

    Zhao Xingwen; Yan Duo; Su Hong; Qian Yi; Kong Jie; Zhang Xueheng; Li Zhankui; Li Haixia

    2014-01-01

    The silicon strip array detector is one of external target facility subsystems in the Cooling Storage Ring on the Heavy Ion Research Facility at Lanzhou (HIRFL-CSR). Using the ASICs, the front-end electronics module has been developed for the silicon strip array detectors and can implement measurement of energy of 96 channels. The performance of the front-end electronics module has been tested. The energy linearity of the front-end electronics module is better than 0.3% for the dynamic range of 0.1∼0.7 V. The energy resolution is better than 0.45%. The maximum channel crosstalk is better than 10%. The channel consistency is better than 1.3%. After continuously working for 24 h at room temperature, the maximum drift of the zero-peak is 1.48 mV. (authors)

  19. 14th Workshop on Crystalline Silicon Solar Cells& Modules: Materials and Processes; Extended Abstracts and Papers

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2004-08-01

    The 14th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. It will offer an excellent opportunity for researchers in private industry and at universities to prioritize mutual needs for future collaborative research. The workshop is intended to address the fundamental properties of PV silicon, new solar cell designs, advanced solar cell processing techniques, and cell-related module issues. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions will review recent advances in crystal growth, new cell designs, new processes and process characterization techniques, cell fabrication approaches suitable for future manufacturing demands, and solar cell encapsulation. This year's theme, ''Crystalline Si Solar Cells: Leapfrogging the Barriers,'' reflects the continued success of crystalline Si PV in overcoming technological barriers to improve solar cell performance and lower the cost of Si PV. The workshop will consist of presentations by invited speakers, followed by discussion sessions. In addition, there will be two poster sessions presenting the latest research and development results. Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV. The sessions will include: Advances in crystal growth and material issues; Impurities and defects; Dynamics during device processing; Passivation; High-efficiency Si solar cells; Advanced processing; Thin Si solar cells; and Solar cell reliability and module issues.

  20. Evanescent waves in optics an introduction to plasmonics

    CERN Document Server

    Bertolotti, Mario; M Guzman, Angela

    2017-01-01

    This monograph provides an introductory discussion of evanescent waves and plasmons, describes their properties and uses, and shows how they are fundamental when operating with nanoscale optics. Far field optics is not suitable for the design, description, and operation of devices at this nanometre scale. Instead one must work with models based on near-field optics and surface evanescent waves. The new discipline of plasmonics has grown to encompass the generation and application of plasmons both as a travelling excitation in a nanostructure and as a stationary enhancement of the electrical field near metal nanosurfaces. The book begins with a brief review of the basic concepts of electromagnetism, then introduces evanescent waves through reflection and refraction, and shows how they appear in diffraction problems, before discussing the role that they play in optical waveguides and sensors. The application of evanescent waves in super-resolution devices is briefly presented, before plasmons are introduced. Th...

  1. Evanescent magnetic field effects on entropy generation at the onset ...

    Indian Academy of Sciences (India)

    application of evanescent magnetic field not only suppresses the fluctuation of the ..... the Prigogine's theorem of minimum entropy production is unproven. ... consists in a double spiral configuration and viscous boundary layers in close ...

  2. Analytical scanning evanescent microwave microscope and control stage

    Science.gov (United States)

    Xiang, Xiao-Dong; Gao, Chen; Duewer, Fred; Yang, Hai Tao; Lu, Yalin

    2009-06-23

    A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

  3. Fiber-optic evanescent-field sensor for attitude measurement

    Science.gov (United States)

    Liu, Yun; Chen, Shimeng; Liu, Zigeng; Guang, Jianye; Peng, Wei

    2017-11-01

    We proposed a new approach to attitude measurement by an evanescent field-based optical fiber sensing device and demonstrated a liquid pendulum. The device consisted of three fiber-optic evanescent-filed sensors which were fabricated by tapered single mode fibers and immersed in liquid. Three fiber Bragg gratings were used to measure the changes in evanescent field. And their reflection peaks were monitored in real time as measurement signals. Because every set of reflection responses corresponded to a unique attitude, the attitude of the device could be measured by the three fiber-optic evanescent-filed sensors. After theoretical analysis, computerized simulation and experimental verification, regular responses were obtained using this device for attitude measurement. The measurement ranges of dihedral angle and direction angle were 0°-50° and 0°-360°. The device is based on cost-effective power-referenced scheme. It can be used in electromagnetic or nuclear radiation environment.

  4. Behavior of the potential-induced degradation of photovoltaic modules fabricated using flat mono-crystalline silicon cells with different surface orientations

    Science.gov (United States)

    Yamaguchi, Seira; Masuda, Atsushi; Ohdaira, Keisuke

    2016-04-01

    This paper deals with the dependence of the potential-induced degradation (PID) of flat, p-type mono-crystalline silicon solar cell modules on the surface orientation of solar cells. The investigated modules were fabricated from p-type mono-crystalline silicon cells with a (100) or (111) surface orientation using a module laminator. PID tests were performed by applying a voltage of -1000 V to shorted module interconnector ribbons with respect to an Al plate placed on the cover glass of the modules at 85 °C. A decrease in the parallel resistance of the (100)-oriented cell modules is more significant than that of the (111)-oriented cell modules. Hence, the performance of the (100)-oriented-cell modules drastically deteriorates, compared with that of the (111)-oriented-cell modules. This implies that (111)-oriented cells offer a higher PID resistance.

  5. A silicon strip module for the ATLAS inner detector upgrade in the super LHC collider

    CERN Document Server

    Gonzalez-Sevilla, S; Parzefall, U; Clark, A; Ikegami, Y; Hara, K; Garcia, C; Jakobs, K; Dwuznik, M; Terada, S; Barbier, G; Koriki, T; Lacasta, C; Unno, Y; Anghinolfi, F; Cadoux, F; Garcia, S M I; Ferrere, D; La Marra, D; Pohl, M; Dabrowski, W; Kaplon, J

    2011-01-01

    The ATLAS detector is a general purpose experiment designed to fully exploit the discovery potential of the Large Hadron Collider (LHC) at a nominal luminosity of 10(34)cm(-2)s(-1). It is expected that after several years of successful data-taking, the LHC physics program will be extended by increasing the peak luminosity by one order of magnitude. For ATLAS, an upgrade scenario will imply the complete replacement of the Inner Detector (ID), since the current tracker will not provide the required performance due to cumulated radiation damage and a dramatic increase in the detector occupancy. In this paper, a proposal of a double-sided silicon micro-strip module for the short-strip region of the future ATLAS ID is presented. The expected thermal performance based upon detailed FEA simulations is discussed. First electrical results from a prototype version of the next generation readout front-end chips are also shown. (C) 2010 Elsevier B.V. All rights reserved.

  6. Rabi oscillation and electron-spin-echo envelope modulation of the photoexcited triplet spin system in silicon

    Science.gov (United States)

    Akhtar, Waseem; Sekiguchi, Takeharu; Itahashi, Tatsumasa; Filidou, Vasileia; Morton, John J. L.; Vlasenko, Leonid; Itoh, Kohei M.

    2012-09-01

    We report on a pulsed electron paramagnetic resonance (EPR) study of the photoexcited triplet state (S=1) of oxygen-vacancy centers in silicon. Rabi oscillations between the triplet sublevels are observed using coherent manipulation with a resonant microwave pulse. The Hahn echo and stimulated echo decay profiles are superimposed with strong modulations known as electron-spin-echo envelope modulation (ESEEM). The ESEEM spectra reveal a weak but anisotropic hyperfine coupling between the triplet electron spin and a 29Si nuclear spin (I=1/2) residing at a nearby lattice site, that cannot be resolved in conventional field-swept EPR spectra.

  7. Establishment of a PID Pass/Fail Test for Crystalline Silicon Modules by Examining Field Performance for Five Years: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Hacke, Peter L [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-11-27

    In an experiment with five module designs and multiple replicas, it is found that crystalline silicon cell modules that can pass a criterion of less than 5 percent power degradation in stress test conditions of 60 degrees Celsius, 85 percent relative humidity (RH), 96 h, and nameplate-rated system voltage bias show no power degradation by potential induced degradation in the range of 4-6 years duration in the Florida, USA environment. This data suggests that this chamber stress level is useful as a pass/fail criterion for PID, and will help ensure against degradation by system voltage stress in Florida, or less stressful climates, for at least 5 years.

  8. Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector

    Science.gov (United States)

    Adam, W.; Bergauer, T.; Brondolin, E.; Dragicevic, M.; Friedl, M.; Frühwirth, R.; Hoch, M.; Hrubec, J.; König, A.; Steininger, H.; Treberspurg, W.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Lauwers, J.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Beghin, D.; Brun, H.; Clerbaux, B.; De Lentdecker, G.; Delannoy, H.; Fasanella, G.; Favart, L.; Goldouzian, R.; Grebenyuk, A.; Karapostoli, G.; Lenzi, T.; Léonard, A.; Luetic, J.; Maerschalk, T.; Marinov, A.; Postiau, N.; Randle-Conde, A.; Seva, T.; Vanlaer, P.; Vannerom, D.; Yonamine, R.; Wang, Q.; Yang, Y.; Zenoni, F.; Zhang, F.; Abu Zeid, S.; Blekman, F.; De Bruyn, I.; De Clercq, J.; D'Hondt, J.; Deroover, K.; Lowette, S.; Moortgat, S.; Moreels, L.; Python, Q.; Skovpen, K.; Van Mulders, P.; Van Parijs, I.; Bakhshiansohi, H.; Bondu, O.; Brochet, S.; Bruno, G.; Caudron, A.; Delaere, C.; Delcourt, M.; De Visscher, S.; Francois, B.; Giammanco, A.; Jafari, A.; Cabrera Jamoulle, J.; De Favereau De Jeneret, J.; Komm, M.; Krintiras, G.; Lemaitre, V.; Magitteri, A.; Mertens, A.; Michotte, D.; Musich, M.; Piotrzkowski, K.; Quertenmont, L.; Szilasi, N.; Vidal Marono, M.; Wertz, S.; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G. H.; Härkönen, J.; Lampén, T.; Luukka, P.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Baulieu, G.; Boudoul, G.; Caponetto, L.; Combaret, C.; Contardo, D.; Dupasquier, T.; Gallbit, G.; Lumb, N.; Mirabito, L.; Perries, S.; Vander Donckt, M.; Viret, S.; Agram, J.-L.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.-M.; Chabert, E.; Chanon, N.; Charles, L.; Conte, E.; Fontaine, J.-Ch.; Gross, L.; Hosselet, J.; Jansova, M.; Tromson, D.; Autermann, C.; Feld, L.; Karpinski, W.; Kiesel, K. M.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Rauch, M.; Schael, S.; Schomakers, C.; Schulz, J.; Schwering, G.; Wlochal, M.; Zhukov, V.; Pistone, C.; Fluegge, G.; Kuensken, A.; Pooth, O.; Stahl, A.; Aldaya, M.; Asawatangtrakuldee, C.; Beernaert, K.; Bertsche, D.; Contreras-Campana, C.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Gallo, E.; Garay Garcia, J.; Hansen, K.; Haranko, M.; Harb, A.; Hauk, J.; Keaveney, J.; Kalogeropoulos, A.; Kleinwort, C.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Pitzl, D.; Reichelt, O.; Savitskyi, M.; Schuetze, P.; Walsh, R.; Zuber, A.; Biskop, H.; Buhmann, P.; Centis-Vignali, M.; Garutti, E.; Haller, J.; Hoffmann, M.; Klanner, R.; Matysek, M.; Perieanu, A.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schwandt, J.; Sonneveld, J.; Steinbrück, G.; Vormwald, B.; Wellhausen, J.; Abbas, M.; Amstutz, C.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Freund, B.; Hartmann, F.; Heindl, S.; Husemann, U.; Kornmeyer, A.; Kudella, S.; Muller, Th.; Printz, M.; Simonis, H. J.; Steck, P.; Weber, M.; Weiler, Th.; Anagnostou, G.; Asenov, P.; Assiouras, P.; Daskalakis, G.; Kyriakis, A.; Loukas, D.; Paspalaki, L.; Siklér, F.; Veszprémi, V.; Bhardwaj, A.; Dalal, R.; Jain, G.; Ranjan, K.; Dutta, S.; Chowdhury, S. Roy; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; Creanza, D.; De Palma, M.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Costa, S.; Di Mattia, A.; Giordano, F.; Potenza, R.; Saizu, M. A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Ciulli, V.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Latino, G.; Lenzi, P.; Meschini, M.; Paoletti, S.; Russo, L.; Scarlini, E.; Sguazzoni, G.; Strom, D.; Viliani, L.; Ferro, F.; Lo Vetere, M.; Robutti, E.; Dinardo, M. E.; Fiorendi, S.; Gennai, S.; Malvezzi, S.; Manzoni, R. A.; Menasce, D.; Moroni, L.; Pedrini, D.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Pozzobon, N.; Tosi, M.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Riceputi, E.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Alunni Solestizi, L.; Biasini, M.; Bilei, G. M.; Cecchi, C.; Checcucci, B.; Ciangottini, D.; Fanò, L.; Gentsos, C.; Ionica, M.; Leonardi, R.; Manoni, E.; Mantovani, G.; Marconi, S.; Mariani, V.; Menichelli, M.; Modak, A.; Morozzi, A.; Moscatelli, F.; Passeri, D.; Placidi, P.; Postolache, V.; Rossi, A.; Saha, A.; Santocchia, A.; Storchi, L.; Spiga, D.; Androsov, K.; Azzurri, P.; Arezzini, S.; Bagliesi, G.; Basti, A.; Boccali, T.; Borrello, L.; Bosi, F.; Castaldi, R.; Ciampa, A.; Ciocci, M. A.; Dell'Orso, R.; Donato, S.; Fedi, G.; Giassi, A.; Grippo, M. T.; Ligabue, F.; Lomtadze, T.; Magazzu, G.; Martini, L.; Mazzoni, E.; Messineo, A.; Moggi, A.; Morsani, F.; Palla, F.; Palmonari, F.; Raffaelli, F.; Rizzi, A.; Savoy-Navarro, A.; Spagnolo, P.; Tenchini, R.; Tonelli, G.; Venturi, A.; Verdini, P. G.; Bellan, R.; Costa, M.; Covarelli, R.; Da Rocha Rolo, M.; Demaria, N.; Rivetti, A.; Dellacasa, G.; Mazza, G.; Migliore, E.; Monteil, E.; Pacher, L.; Ravera, F.; Solano, A.; Fernandez, M.; Gomez, G.; Jaramillo Echeverria, R.; Moya, D.; Gonzalez Sanchez, F. J.; Vila, I.; Virto, A. L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Bonnaud, J.; Caratelli, A.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Auria, A.; Detraz, S.; Deyrail, D.; Dondelewski, O.; Faccio, F.; Frank, N.; Gadek, T.; Gill, K.; Honma, A.; Hugo, G.; Jara Casas, L. M.; Kaplon, J.; Kornmayer, A.; Kottelat, L.; Kovacs, M.; Krammer, M.; Lenoir, P.; Mannelli, M.; Marchioro, A.; Marconi, S.; Mersi, S.; Martina, S.; Michelis, S.; Moll, M.; Onnela, A.; Orfanelli, S.; Pavis, S.; Peisert, A.; Pernot, J.-F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; di Calafiori, D.; Casal, B.; Berger, P.; Djambazov, L.; Donega, M.; Grab, C.; Hits, D.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Meinhard, M.; Perozzi, L.; Roeser, U.; Starodumov, A.; Tavolaro, V.; Wallny, R.; Zhu, D.; Amsler, C.; Bösiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; de Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.-C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.-H.; Dietz, C.; Grundler, U.; Hou, W.-S.; Lu, R.-S.; Moya, M.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; Seif El Nasr-Storey, S.; Cole, J.; Hoad, C.; Hobson, P.; Morton, A.; Reid, I. D.; Auzinger, G.; Bainbridge, R.; Dauncey, P.; Fulcher, J.; Hall, G.; James, T.; Magnan, A.-M.; Pesaresi, M.; Raymond, D. M.; Uchida, K.; Braga, D.; Coughlan, J. A.; Harder, K.; Jones, L.; Ilic, J.; Murray, P.; Prydderch, M.; Tomalin, I. R.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Olmedo, M.; Si, W.; Yates, B. R.; Gerosa, R.; Sharma, V.; Vartak, A.; Yagil, A.; Zevi Della Porta, G.; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; Mullin, S.; Qu, H.; White, D.; Dominguez, A.; Bartek, R.; Cumalat, J. P.; Ford, W. T.; Jensen, F.; Johnson, A.; Krohn, M.; Leontsinis, S.; Mulholland, T.; Stenson, K.; Wagner, S. R.; Apresyan, A.; Bolla, G.; Burkett, K.; Butler, J. N.; Cheung, H. W. K.; Chramowicz, J.; Christian, D.; Cooper, W. E.; Deptuch, G.; Derylo, G.; Gingu, C.; Grünendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Kahlid, F.; Lei, C. M.; Lipton, R.; Lopes De Sá, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Schneider, B.; Sellberg, G.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Berry, D. R.; Chen, X.; Ennesser, L.; Evdokimov, A.; Evdokimov, O.; Gerber, C. E.; Hofman, D. J.; Makauda, S.; Mills, C.; Sandoval Gonzalez, I. D.; Alimena, J.; Antonelli, L. J.; Francis, B.; Hart, A.; Hill, C. S.; Parashar, N.; Stupak, J.; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D. H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Khalil, S.; Kropivnitskaya, A.; Majumder, D.; Wilson, G.; Ivanov, A.; Mendis, R.; Mitchell, T.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J. G.; Cremaldi, L. M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Claes, D. R.; Fangmeier, C.; Gonzalez Suarez, R.; Monroy, J.; Siado, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Gershtein, Y.; Halkiadakis, E.; Kyriacou, S.; Lath, A.; Nash, K.; Osherson, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Norberg, S.; Ramirez Vargas, J. E.; Alyari, M.; Dolen, J.; Godshalk, A.; Harrington, C.; Iashvili, I.; Kharchilava, A.; Nguyen, D.; Parker, A.; Rappoccio, S.; Roozbahani, B.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; McDermott, K.; Mirman, N.; Rinkevicius, A.; Ryd, A.; Salvati, E.; Skinnari, L.; Soffi, L.; Tao, Z.; Thom, J.; Tucker, J.; Zientek, M.; Akgün, B.; Ecklund, K. M.; Kilpatrick, M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Covarelli, R.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Patel, R.; Perloff, A.; Ulmer, K. A.; Delannoy, A. G.; D'Angelo, P.; Johns, W.

    2018-03-01

    A new CMS Tracker is under development for operation at the High Luminosity LHC from 2026 onwards. It includes an outer tracker based on dedicated modules that will reconstruct short track segments, called stubs, using spatially coincident clusters in two closely spaced silicon sensor layers. These modules allow the rejection of low transverse momentum track hits and reduce the data volume before transmission to the first level trigger. The inclusion of tracking information in the trigger decision is essential to limit the first level trigger accept rate. A customized front-end readout chip, the CMS Binary Chip (CBC), containing stub finding logic has been designed for this purpose. A prototype module, equipped with the CBC chip, has been constructed and operated for the first time in a 4 GeemVem/emc positron beam at DESY. The behaviour of the stub finding was studied for different angles of beam incidence on a module, which allows an estimate of the sensitivity to transverse momentum within the future CMS detector. A sharp transverse momentum threshold around 2 emVem/emc was demonstrated, which meets the requirement to reject a large fraction of low momentum tracks present in the LHC environment on-detector. This is the first realistic demonstration of a silicon tracking module that is able to select data, based on the particle's transverse momentum, for use in a first level trigger at the LHC . The results from this test are described here.

  9. Production and characterization of SLID interconnected n-in-p pixel modules with 75 micron thin silicon sensors

    CERN Document Server

    Andricek, L; Macchiolo, A; Moser, H.G; Nisius, R; Richter, R.H; Terzo, S; Weigell, P

    2014-01-01

    The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. T...

  10. Production and Characterisation of SLID Interconnected n-in-p Pixel Modules with 75 Micrometer Thin Silicon Sensors

    CERN Document Server

    Andricek, L; Macchiolo, A.; Moser, H.-G.; Nisius, R.; Richter, R.H.; Terzo, S.; Weigell, P.

    2014-01-01

    The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tunability, charge collection, cluster sizes and hit efficiencies. Targeting at ...

  11. Radiation Hard Silicon Photonics Mach-Zehnder Modulator for HEP applications: all-Synopsys SentaurusTM Pre-Irradiation Simulation

    CERN Document Server

    Cammarata, Simone

    2017-01-01

    Silicon Photonics may well provide the opportunity for new levels of integration between detectors and their readout electronics. This technology is thus being evaluated at CERN in order to assess its suitability for use in particle physics experiments. In order to check the agreement with measurements and the validity of previous device simulations, a pure Synopsys SentaurusTM simulation of an un-irradiated Mach-Zehnder silicon modulator has been carried out during the Summer Student project. Index Terms—Silicon Photonics, Mach-Zehnder modulator, electro-optic simulation, Synopsys SentaurusTM, electro-optic measurement, HEP.

  12. Life cycle assessment of grid-connected photovoltaic power generation from crystalline silicon solar modules in China

    International Nuclear Information System (INIS)

    Hou, Guofu; Sun, Honghang; Jiang, Ziying; Pan, Ziqiang; Wang, Yibo; Zhang, Xiaodan; Zhao, Ying; Yao, Qiang

    2016-01-01

    Graphical abstract: Comparison of life cycle GHG emissions of various power sources. - Highlights: • The LCA study of grid-connected PV generation with silicon solar modules in China has been performed. • The energy payback times range from 1.6 to 2.3 years. • The GHG emissions are in the range of 60.1–87.3 g-CO_2,eq/kW h. • The PV manufacturing process occupied about 85% or higher of total energy usage and total GHG emission. • The SoG-Si production process accounted for more than 35% of total energy consumption and GHG emissions. - Abstract: The environmental impacts of grid-connected photovoltaic (PV) power generation from crystalline silicon (c-Si) solar modules in China have been investigated using life cycle assessment (LCA). The life cycle inventory was first analyzed. Then the energy consumption and greenhouse gas (GHG) emission during every process were estimated in detail, and finally the life-cycle value was calculated. The results showed that the energy payback time (T_E_P_B_T) of grid-connected PV power with crystalline silicon solar modules ranges from 1.6 to 2.3 years, while the GHG emissions now range from 60.1 to 87.3 g-CO_2,eq/kW h depending on the installation methods. About 84% or even more of the total energy consumption and total GHG emission occupied during the PV manufacturing process. The solar grade silicon (SoG-Si) production is the most energy-consuming and GHG-emitting process, which accounts for more than 35% of the total energy consumption and the total GHG emission. The results presented in this study are expected to provide useful information to enact reasonable policies, development targets, as well as subsidies for PV technology in China.

  13. Comparative study of the reliability of MPPT algorithms for the crystalline silicon photovoltaic modules in variable weather conditions

    Directory of Open Access Journals (Sweden)

    Abraham Dandoussou

    2017-05-01

    Full Text Available The crystalline silicon photovoltaic modules are widely used as power supply sources in the tropical areas where the weather conditions change abruptly. Fortunately, many MPPT algorithms are implemented to improve their performance. In the other hand, it is well known that these power supply sources are nonlinear dipoles and so, their intrinsic parameters may vary with the irradiance and the temperature. In this paper, the MPPT algorithms widely used, i.e. Perturb and Observe (P&O, Incremental Conductance (INC, Hill-Climbing (HC, are implemented using Matlab®/Simulink® model of a crystalline silicon photovoltaic module whose intrinsic parameters were extracted by fitting the I(V characteristic to experimental points. Comparing the simulation results, it is obvious that the variable step size INC algorithm has the best reliability than both HC and P&O algorithms for the near to real Simulink® model of photovoltaic modules. With a 60 Wp photovoltaic module, the daily maximum power reaches 50.76 W against 34.40 W when the photovoltaic parameters are fixed. Meanwhile, the daily average energy is 263 Wh/day against 195 Wh/day.

  14. Performance of a PET detector module utilizing an array of silicon photodiodes to identify the crystal of interaction

    International Nuclear Information System (INIS)

    Moses, W.W.; Derenzo, S.E.; Nutt, R.; Digby, W.M.; Williams, C.W.; Andreaco, M.

    1993-01-01

    The authors initial performance results for a new multi-layer PET detector module consisting of an array of 3 mm square by 30 mm deep BGO crystals coupled on one end to a single photomultiplier tube and on the opposite end to an array of 3 mm square silicon photodiodes. The photomultiplier tube provides an accurate timing pulse and energy discrimination for all the crystals in the module, while the silicon photodiodes identify the crystal of interaction. When a single BGO crystal at +25 C is excited with 511 keV photons, the authors measure a photodiode signal centered at 700 electrons (e - ) with noise of 375 e - fwhm. When a four crystal/photodiode module is excited with a collimated line source of 511 keV photons, the crystal of interaction is correctly identified 82% of the time. The misidentification rate can be greatly reduced and an 8 x 8 crystal/photodiode module constructed by using thicker depletion layer photodiodes or cooling to 0 C

  15. Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit.

    Science.gov (United States)

    Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V

    2014-05-01

    We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.

  16. Evanescent field infrared spectroscopy using chalcogenide glass fiber

    International Nuclear Information System (INIS)

    Katz Moti

    1992-06-01

    In the last few years a simple and cheap fiber-optics based spectroscopy method was developed for the investigation of liquids, pastes gases and thin layers. The fiber is immersed in the sample, and the investigated material becomes the fiber cladding. the interaction between the guided radiation in the fiber and the specimen is taking place by evanescent field which extends outside the fiber. This work concentrates in the quantitative characterization of the absorption of the evanescent field by the fiber cladding (the specimen). This subject was dealt with only briefly in the earlier works, and the aim of this work is to obtain a comprehensive understanding of this issue. (author)

  17. Transfer function and near-field detection of evanescent waves

    DEFF Research Database (Denmark)

    Radko, Ylia P.; Bozhevolnyi, Sergey I.; Gregersen, Niels

    2006-01-01

    of collection and illumination modes. Making use of a collection near-field microscope with a similar fiber tip illuminated by an evanescent field, we measure the collected power as a function of the field spatial frequency in different polarization configurations. Considering a two-dimensional probe...... for the transfer function, which is derived by introducing an effective pointof (dipolelike) detection inside the probe tip. It is found to be possible to fit reasonably well both the experimental and the simulation data for evanescent field components, implying that the developed approximation of the near......-field transfer function can serve as a simple, rational, and sufficiently reliable means of fiber probe characterization....

  18. Monolithic amorphous silicon modules on continuous polymer substrate. Final subcontract report, 9 January 1991--14 April 1991

    Energy Technology Data Exchange (ETDEWEB)

    Grimmer, D.P. [Iowa Thin Film Technologies, Inc., Ames, IA (US)

    1992-03-01

    This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

  19. High Volume Manufacturing of Silicon-Film Solar Cells and Modules; Final Subcontract Report, 26 February 2003 - 30 September 2003

    Energy Technology Data Exchange (ETDEWEB)

    Rand, J. A.; Culik, J. S.

    2005-10-01

    The objective of the PV Manufacturing R&D subcontract was to continue to improve AstroPower's technology for manufacturing Silicon-Film* wafers, solar cells, and modules to reduce costs, and increase production yield, throughput, and capacity. As part of the effort, new technology such as the continuous back metallization screen-printing system and the laser scribing system were developed and implemented. Existing processes, such as the silicon nitride antireflection coating system and the fire-through process were optimized. Improvements were made to the statistical process control (SPC) systems of the major manufacturing processes: feedstock preparation, wafer growth, surface etch, diffusion, and the antireflection coating process. These process improvements and improved process control have led to an increase of 5% relative power, and nearly 15% relative improvement in mechanical and visual yield.

  20. Development of evanescent wave absorbance-based fibre-optic ...

    Indian Academy of Sciences (India)

    potential human health risk and may lead to death in young children and adults ... tive measures for disease outbreak are necessary, because of the recent biothreat, ... optical fibres in chemical sensing and biosensing are reviewed in detail in [12–19]. ... systematic development of these evanescent wave absorbance-based ...

  1. Helicity and evanescent waves. [Energy transport velocity, helicity, Lorentz transformation

    Energy Technology Data Exchange (ETDEWEB)

    Agudin, J L; Platzeck, A M [La Plata Univ. Nacional (Argentina); Albano, J R [Instituto de Astronomia y Fisica del Espacio, Buenos Aires, Argentina

    1978-02-20

    It is shown that the projection of the angular momentum of a circularly polarized electromagnetic evanescent wave along the mean velocity of energy transport (=helicity) can be reverted by a Lorentz transformation, in spite of the fact that this velocity is c.

  2. From the Somigliana waves to the evanescent waves

    Directory of Open Access Journals (Sweden)

    Pietro Caloi

    2010-02-01

    Full Text Available The Rayleigh equation has real coefficients; therefore, also the case of complex conjugated roots may be explained physically. The Author proves that the Somigliana waves may be formed for Poisson ratio values until 0.30543; for gradually less rigid media, they are missing altogether and degenerate into evanescent waves.

  3. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    Science.gov (United States)

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  4. Silicon dioxide etching process for fabrication of micro-optics employing pulse-modulated electron-beam-excited plasma

    International Nuclear Information System (INIS)

    Takeda, Keigo; Ohta, Takayuki; Ito, Masafumi; Hori, Masaru

    2006-01-01

    Silicon dioxide etching process employing a pulse-modulated electron-beam-excited plasma (EBEP) has been developed for a fabrication process of optical micro-electro-mechanical systems (MEMSs). Nonplanar dielectric materials were etched by using self-bias induced by the electron beam generating the plasma. In order to investigate the effect of pulse modulation on electron beam, plasma diagnostics were carried out in the EBEP employing C 4 F 8 gas diluted with Ar gas by using a Langmuir single probe and time resolved optical emission spectroscopy. It was found that the pulse-modulated EBEP has an excellent potential to reduce the plasma-induced thermal damage on a photoresist film on a substrate to get the uniform etching and the anisotropic SiO 2 etching in comparison with the conventional EBEP. The pulse-modulated EBEP enabled us to get the high etch rate of SiO 2 of 375 nm/min without any additional bias power supply. Furthermore, the microfabrication on the core area of optical fiber was realized. These results indicate that the pulse-modulated EBEP will be a powerful tool for the application to optical MEMS process

  5. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2008-09-01

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

  6. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2005-11-01

    The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

  7. Test-beam evaluation of heavily irradiated silicon strip modules for ATLAS Phase-II Strip Tracker Upgrade

    CERN Document Server

    Blue, Andrew; The ATLAS collaboration

    2018-01-01

    The planned HL-LHC (High Luminosity LHC) is being designed to maximise the physics potential of the LHC with 10 years of operation at instantaneous luminosities of 7.5x1034cm−2s−1. A consequence of this increased luminosity is the expected radiation damage requiring the tracking detectors to withstand hadron equivalences to over 1x1015 1 MeV neutron equivalent per cm2 in the ATLAS Strips system. The silicon strip tracker exploits the concept of modularity. Fast readout electronics, deploying 130nm CMOS front-end electronics are glued on top of a silicon sensor to make a module. The radiation hard n-in-p micro-strip sensors used have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics. A series of tests were performed at the DESY-II and CERN SPS test beam facilities to investigate the detailed performance of a strip module with both 2.5cm and 5cm length strips before and after irradiation with 8x1014neqcm−2 protons and a total ionising dose of 37.2MRad. The DURA...

  8. Effects of spectral variation on the device performance of copper indium diselenide and multi-crystalline silicon photovoltaic modules

    Energy Technology Data Exchange (ETDEWEB)

    Okullo, W.; Munji, M.K.; Vorster, F.J.; van Dyk, E.E. [Department of Physics, Nelson Mandela Metropolitan University, Box 77000, Port Elizabeth (South Africa)

    2011-02-15

    We present results of an experimental investigation of the effects of the daily spectral variation on the device performance of copper indium diselenide and multi-crystalline silicon photovoltaic modules. Such investigations are of importance in characterization of photovoltaic devices. The investigation centres on the analysis of outdoor solar spectral measurements carried out at 10 min intervals on clear-sky days. We have shown that the shift in the solar spectrum towards infrared has a negative impact on the device performance of both modules. The spectral bands in the visible region contribute more to the short circuit current than the bands in the infrared region while the ultraviolet region contributes least. The quantitative effects of the spectral variation on the performance of the two photovoltaic modules are reflected on their respective device performance parameters. The decrease in the visible and the increase in infrared of the late afternoon spectra in each case account for the decreased current collection and hence power and efficiency of both modules. (author)

  9. Production and characterisation of SLID interconnected n-in-p pixel modules with 75 μm thin silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Andricek, L. [Halbleiterlabor der Max-Planck-Gesellschaft, Otto Hahn Ring 6, D-81739 München (Germany); Beimforde, M.; Macchiolo, A.; Moser, H.-G. [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany); Nisius, R., E-mail: Richard.Nisius@mpp.mpg.de [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany); Richter, R.H. [Halbleiterlabor der Max-Planck-Gesellschaft, Otto Hahn Ring 6, D-81739 München (Germany); Terzo, S.; Weigell, P. [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany)

    2014-09-11

    The performance of pixel modules built from 75 μm thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 μm thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. Targeting at a usage at the high luminosity upgrade of the LHC accelerator called HL-LHC, the results were obtained before and after irradiation up to fluences of 10{sup 16}n{sub eq}/cm{sup 2}.

  10. THz-induced ultrafast modulation of NIR refractive index of silicon

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun; Hirori, Hideki; Iwaszczuk, Krzysztof

    2016-01-01

    We measure THz-induced change in refractive index of ∼5×10−3 in high resistivity silicon at 800 nm which indicates generation of high density of free carriers. The change in refractive index increases by more than 30 times with high initial carrier density set by optical excitation compared to op...

  11. Light management in large area thin-film silicon solar modules

    Czech Academy of Sciences Publication Activity Database

    Losio, P.A.; Caglar, O.; Cashmore, J.S.; Hötzel, J.E.; Ristau, S.; Holovský, Jakub; Remeš, Zdeněk; Sinicco, I.

    2015-01-01

    Roč. 143, Dec (2015), s. 375-385 ISSN 0927-0248 R&D Projects: GA ČR(CZ) GA14-05053S Institutional support: RVO:68378271 Keywords : micromorph * thin-film silicon solar cells * light management * ZnO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.732, year: 2015

  12. Microcrystalline bottom cells in large area thin film silicon MICROMORPH™ solar modules

    Czech Academy of Sciences Publication Activity Database

    Hoetzel, J.E.; Caglar, O.; Cashmore, J.S.; Goury, C.; Kalaš, J.; Klindworth, M.; Kupich, M.; Leu, G.F.; Lindic, M.H.; Losio, P.A.; Mates, Tomáš; Mereu, B.; Roschek, T.; Sinicco, I.

    2016-01-01

    Roč. 157, Dec (2016), s. 178-189 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * material quality * PECVD * Raman crystallinity * grading * micromorph Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 4.784, year: 2016

  13. Evanescent radiation, quantum mechanics and the Casimir effect

    Science.gov (United States)

    Schatten, Kenneth H.

    1989-01-01

    An attempt to bridge the gap between classical and quantum mechanics and to explain the Casimir effect is presented. The general nature of chaotic motion is discussed from two points of view: the first uses catastrophe theory and strange attractors to describe the deterministic view of this motion; the underlying framework for chaos in these classical dynamic systems is their extreme sensitivity to initial conditions. The second interpretation refers to randomness associated with probabilistic dynamics, as for Brownian motion. The present approach to understanding evanescent radiation and its relation to the Casimir effect corresponds to the first interpretation, whereas stochastic electrodynamics corresponds to the second viewpoint. The nonlinear behavior of the electromagnetic field is also studied. This well-understood behavior is utilized to examine the motions of two orbiting charges and shows a closeness between the classical behavior and the quantum uncertainty principle. The evanescent radiation is used to help explain the Casimir effect.

  14. Ultracompact electro-optic phase modulator based on III-V-on-silicon microdisk resonator.

    Science.gov (United States)

    Lloret, J; Kumar, R; Sales, S; Ramos, F; Morthier, G; Mechet, P; Spuesens, T; Van Thourhout, D; Olivier, N; Fédéli, J-M; Capmany, J

    2012-06-15

    A novel ultracompact electro-optic phase modulator based on a single 9 μm-diameter III-V microdisk resonator heterogeneously integrated on and coupled to a nanophotonic waveguide is presented. Modulation is enabled by effective index modification through carrier injection. Proof-of-concept implementation involving binary phase shift keying modulation format is assembled. A power imbalance of ∼0.6  dB between both symbols and a modulation rate up to 1.8 Gbps are demonstrated without using any special driving technique.

  15. Monitoring the performance of single and triple junction amorphous silicon modules in two building integrated photovoltaic (BIPV) installations

    International Nuclear Information System (INIS)

    Eke, Rustu; Senturk, Ali

    2013-01-01

    Highlights: • The first and the largest BIPV of Turkey were installed. • Single and triple junction amorphous module performances in BIPV applications are analyzed. • Total generated electricity of the BIPV system is measured as 103,702 kW h for 36 months of operation. • Annual energy rating is calculated as 856 kW h/kWp for a non-optimally oriented plant. • The PR of the system is found 0.74 and 0.81 for PV systems on towers and facade respectively. - Abstract: Mugla is located in south west Turkey at 37°13′N latitude and 28°36′E longitude with yearly sum of horizontal global irradiation exceeding 1700 kW h per square meter. Mugla has a Mediterranean Climate which is characterized by long, hot and dry summers with cool and wet winters. Mugla Sıtkı Kocman University is the largest “PV Park” in Turkey consisting of 100 kWp installed Photovoltaic Power Systems (PVPSs) with different PV applications. The 40 kWp building integrated photovoltaic (BIPV) system which is the first and largest in Turkey was installed on the façade and the two towers of the “Staff Block of the Education Faculty’s Building” of Mugla Sıtkı Kocman University in February 2008. Triple junction amorphous silicon photovoltaic modules are used on the façade and single junction amorphous silicon PV modules are used on the East and West towers of the building. In this paper, the 40 kWp BIPV system in Mugla, Turkey is presented, and its performance is evaluated. Energy rating (kW h/kWp energy yield), efficiencies and performance ratios of both applications are also evaluated for 36 months of operation. Daily, monthly and seasonal variations in performance parameters of the BIPV system in relation to solar data and meteorological parameters and outdoor performance of two reference modules (representing the modules on façade and towers) in a summer and a winter day are also investigated

  16. CBM experiment. Characterization studies of the detector modules for silicon tracking syste

    Directory of Open Access Journals (Sweden)

    I. V. Panasenko

    2013-09-01

    Full Text Available The double-sided silicon microstrip detector prototypes with 50 μm pitch developed together with CiS, Germany, have been characterized in a 2.4 GeV/c proton beam at COSY, Forschungszentrum Jülich, Germany. Data analyses including reconstruction of 1-strip and 2-strip clusters have been performed. We have done the study of charge sharing in the interstrip gap. In particular it was found that there is a charge loss of less than 10 % in the interstrip gap. The calculated signal-to-noise ratio is around 19 for the p-side of the sensor and it is sufficient for hit reconstruction. Also the charge sharing function which allows more precise determination of the hit position in silicon sensor, have been reconstructed.

  17. Investigation of innovative silicon detector assembling solutions for hadron calorimeter modules

    International Nuclear Information System (INIS)

    Cai, G.; Ammannati, N.

    1995-01-01

    The application of large areas of silicon detector mosaics in calorimetry for high energy particles measurement in Physics has grown in the last few years and is still in progress. The high number of mosaic units in the calorimeter implies the following main requirements to be satisfied: a simple low cost for manufacturing and assembling, easy mountable/dismountable units, possibility to move or change silicon detectors easily, reliability of the electrical contacts between the aluminium layer on the silicon detector surface and the PCB breaker points.In order to satisfy the above requirements several assembling solutions have been investigated and tested recently, as fixed contact by using conducting epoxy-glues, mechanically dismountable contacts of gold-plated PCB copper to the silicon detectors, and others.The results of the tests show a general degradation of the original electrical characteristics of the contacts after of varying lengths operating times.This fact, due to corrosion phenomena assisted by chemical residuals in the contact interface, causes an irreversible damage of the detectors in the long term.In addition we found a room temperature interdiffusion of gold and copper.A promising solution to these problems can be achieved by careful removal of chemical, increase of golden layer of the PCB electrical copper contacts or aluminising them by pure aluminium vapour deposition in vacuum chamber.Thee estimated degradation time between the PCB copper and the aluminium film is very low in this case, and the risk of diffusion in the detector aluminium film surface is low along the whole operating life of the calorimeter. (orig.)

  18. Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

    Science.gov (United States)

    Vertes, Akos; Walker, Bennett N.

    2013-09-10

    The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

  19. Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

    Science.gov (United States)

    Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

    2017-05-01

    Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive

  20. 77 FR 31309 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-05-25

    ... duty (``CVD'') investigations of solar cells stating that modules, laminates, and panels produced in a..., laminates, and panels produced in the PRC from solar cells produced in a third-country are not covered by... modules, laminates, and panels produced in a third-country from solar cells produced in the PRC are...

  1. 77 FR 63791 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled into Modules, from the People's...

    Science.gov (United States)

    2012-10-17

    ..., laminates, and panels produced in a third- country from solar cells produced in the PRC; however, modules, laminates, and panels produced in the PRC from solar cells produced in a third-country are not covered by the investigations. If an importer imports solar panels/modules that it claims do not contain solar...

  2. ATLAS Tracker Upgrade: Silicon Strip Detectors and Modules for the sLHC

    International Nuclear Information System (INIS)

    Lefebvre, Michel; Minano Moya, Mercedes

    2010-01-01

    It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown. (authors)

  3. ATLAS Tracker Upgrade: Silicon Strip Detectors and Modules for the SLHC

    CERN Document Server

    Minano, M

    2010-01-01

    It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown.

  4. Atlas Tracker Upgrade: Silicon Strip Detectors and Modules for the SLHC

    CERN Document Server

    Minano, M

    2010-01-01

    It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a significant factor, with the upgraded machine dubbed Super-LHC. The ATLAS experiment will require a new tracker for Super-LHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will imply a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown.

  5. Study on Mitigation Method of Solder Corrosion for Crystalline Silicon Photovoltaic Modules

    Directory of Open Access Journals (Sweden)

    Ju-Hee Kim

    2014-01-01

    Full Text Available The corrosion of 62Sn36Pb2Ag solder connections poses serious difficulties for outdoor-exposed photovoltaic (PV modules, as connection degradation contributes to the increase in series resistance (RS of PV modules. In this study, we investigated a corrosion mitigation method based on the corrosion mechanism. The effect of added sacrificial metal on the reliability of PV modules was evaluated using the oxidation-reduction (redox reaction under damp heat (DH conditions. Experimental results after exposure to DH show that the main reason for the decrease in power was a drop in the module’s fill factor. This drop was attributed to the increase of RS. The drop in output power of the PV module without added sacrificial metal is greater than that of the sample with sacrificial metal. Electroluminescence and current-voltage mapping analysis also show that the PV module with sacrificial metal experienced less degradation than the sample without sacrificial metal.

  6. Development and Evaluation of Test Stations for the Quality Assurance of the Silicon Micro-Strip Detector Modules for the CMS Experiment

    CERN Document Server

    Pöttgens, Michael

    2007-01-01

    CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m2, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control o...

  7. 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2006-08-01

    The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

  8. Effect of Radiation on a Mach-Zehnder Interferometer Silicon Modulator for HL-LHC data Transmission Applications

    CERN Document Server

    El Nasr-Storey, Sarah Seif; Baudot, Charles; Detraz, Stephane; Fedeli, Jean Marc; Marris-Morini, Delphine; Olantera, Lauri; Pezzullo, Giuseppe; Sigaud, Christophe; Soos, Csaba; Troska, Jan; Vasey, Francois; Vivien, Laurent; Zeiler, Marcel; Ziebell, Melissa

    2015-01-01

    High-speed Mach-Zehnder interferometer silicon modulators were irradiated with neutrons and X-rays in two separate radiation tests. The devices were exposed to a total fluence of 1.2 x 10$^{15}$ neutrons/cm$^2$ and a total ionizing dose of 1.3 MGy; levels comparable to the worst radiation levels for a tracking detector after 10 years of operation at the High- Luminosity LHC. Our measurements indicate that the devices performance does not significantly degrade after exposure to nonionizing radiation and begins to be affected by ionizing radiation after a dose of a few hundred kGy; the phase-shift for an applied reverse bias of 1 V is 10% of its pre-irradiated value after 600 kGy of received ionizing dose.

  9. Waveguide evanescent field fluorescence microscopy & its application in cell biology

    Science.gov (United States)

    Hassanzadeh, Abdollah

    There are many powerful microscopy technologies available for the investigation of bulk materials as well as for thin film samples. Nevertheless, for imaging an interface, especially live cells on a substrate and ultra thin-films, only Total Internal Reflection Fluorescence (TIRF) microscopy is available. This TIRF microscopy allows imaging without interference of the bulk. Various approaches are employed in fluorescence microscopy applications to restrict the excitation and detection of fluorophores to a thin region of the specimen. Elimination of background fluorescence from outside the focal plane can dramatically improve the signal-to-noise ratio, and consequently, the spatial resolution of the features or events of interest. TIRF microscopy is an evanescent field based microscopy. In this method, fluorescent dyes are only excited within an evanescent field: roughly within 100 nm above a glass coverslip. This will allow imaging surface and interfacial issues of the glass coverslip and an adjacent material. Waveguide evanescent field fluorescence (WEFF) microscopy is a new development for imaging cell-substrate interactions in real time and in vitro. It is an alternative to TIRF microscopy. In this method the light is coupled into a waveguide via an optical grating. The coupled light propagates as a waveguide mode and exhibits an evanescent field on top of the waveguide. This can be used as a surface-bound illumination source to excite fluorophores. This evanescent field serves as an extremely powerful tool for quality control of thin films, to study cell-substrate contacts, and investigating the effect of external agents and drugs on the cell-substrate interaction in real time and in vitro. This new method has been established and optimized to minimize non-uniformity, scattering and photo bleaching issues. Visualizing and quantifying of the cell-substrates and solid thin films have been carried out by WEFF microscopy. The images of the cell-substrate interface

  10. Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

    International Nuclear Information System (INIS)

    Poettgens, M.

    2007-01-01

    CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m 2 , the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the corresponding

  11. A Silicon Hadron Calorimeter Module Operated in a Strong Magnetic Field with VLSI Readout for LHC

    CERN Multimedia

    2002-01-01

    % RD35 \\\\ \\\\ On the basis of a cost optimized Silicon production technology we proposed to build a hadron calorimeter active plane. \\\\ \\\\The production of detectors is closely followed and final quality control is performed according to specifications. \\\\ \\\\The technology designed for the cheap pad detector production is applied for the coarse strip detector manufacturing. These strip detectors will be used in the preshower of the electromagnetic calorimeter of CMS. \\footnote{Research & Prod. Assoc. ELMA, RSFSR} \\footnote{Byelorussian State Univ. Minsk} \\footnote{Research & Prod. Comp. SIAPS, RSFSR} \\footnote{Joffe Physical-Technical Inst. RSFSR} \\footnote{Ansaldo Richerche spa, Genoa} \\footnote{SGS-THOMSON, Castelletto, Milan}

  12. Noise analysis due to strip resistance in the ATLAS SCT silicon strip module

    International Nuclear Information System (INIS)

    Kipnis, I.

    1996-08-01

    The module is made out of four 6 cm x 6 cm single sided Si microstrip detectors. Two detectors are butt glued to form a 12 cm long mechanical unit and strips of the two detectors are electrically connected to form 12 cm long strips. The butt gluing is followed by a back to back attachment. The module in this note is the Rφ module where the electronics is oriented parallel to the strip direction and bonded directly to the strips. This module concept provides the maximum signal-to-noise ratio, particularly when the front-end electronics is placed near the middle rather than at the end. From the noise analysis, it is concluded that the worst-case ΔENC (far-end injection) between end- and center-tapped modules will be 120 to 210 el. rms (9 to 15%) for a non-irradiated detector and 75 to 130 el. rms (5 to 9%) for an irradiated detector, for a metal strip resistance of 10 to 20 Ω/cm

  13. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat; Frost, Thomas; Hazari, Arnab; Yan, Lifan; Stark, Ethan; LaMountain, Trevor; Millunchick, Joanna M.; Ooi, Boon S.; Bhattacharya, Pallab

    2015-01-01

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  14. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat

    2015-02-16

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  15. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, and development of technologies to manufacture amorphous silicon/thin film poly-crystalline silicon hybrid thin film solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon / usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Developmental research has been performed on large-area low-cost manufacturing technologies on hybrid thin film solar cells of amorphous silicon and poly-crystalline silicon. This paper summarizes the achievements in fiscal 1999. The research has been performed on a texture construction formed naturally on silicon surface, and thin film poly-crystalline silicon cells with STAR structure having a rear side reflection layer to increase light absorption. The research achievements during the current fiscal year may be summarized as follows: the laser scribing technology for thin film poly-crystalline silicon was established, which is important for modularization, making fabrication of low-cost and large-area modules possible; a stabilization efficiency of 11.3% was achieved in a hybrid mini module comprising of ten-stage series integrated amorphous silicon and thin film poly-crystalline silicon; structures different hybrid modules were discussed, whereas an initial efficiency of 10.3% (38.78W) was achieved in a sub-module having a substrate size of 910 mm times 455 mm; and feasibility of forming large-area hybrid modules was demonstrated. (NEDO)

  16. Cost reduction by using micro-fingers in thin film silicon modules

    Energy Technology Data Exchange (ETDEWEB)

    Slooff, L.H.; Bosman, J.; Loffler, J.; Budel, T. [ECN Solar Energy, Petten (Netherlands)

    2013-06-15

    A finite element electrical model is described that can be used to calculate the performance of monolithic thin film photovoltaic modules. The model is suitable for all type of thin film modules, like e.g. p-i-n a-Si:H, CIGS and polymer based modules and it includes losses due to interconnection. Using this model a parameter study is performed for a-Si:H cells with the aim to reduce metal consumption in the cell and interconnection. It is shown that a reduction in metal consumption by a factor 1.3 can be achieved with only marginal loss in performance if short cell are used with very short fingers.

  17. Influence of Temperature on the Performance of Photovoltaic Polycrystalline Silicon Module in the Bruneian Climate

    Directory of Open Access Journals (Sweden)

    A. Q. Malik

    2017-11-01

    Full Text Available The influence of working temperature for  a  polysilicon module has been investigated in Brunei Darussalam for a period of two years.  The rise in temperature produces thermal agitation which not only increases the dark current but also enhances the losses of free carriers in a polycrystalline module. The efficiency and the output power decreases with an increase in the working temperature. A maximum decline in the output power of 97% has been measured under a dominated diffused radiation environment. The temperature coefficients have been obtained and equations are developed to evaluate the change in the rating of module at any working temperature with reference to their values at STC.

  18. Comparison of microrings and microdisks for high-speed optical modulation in silicon photonics

    Science.gov (United States)

    Ying, Zhoufeng; Wang, Zheng; Zhao, Zheng; Dhar, Shounak; Pan, David Z.; Soref, Richard; Chen, Ray T.

    2018-03-01

    The past several decades have witnessed the gradual transition from electrical to optical interconnects, ranging from long-haul telecommunication to chip-to-chip interconnects. As one type of key component in integrated optical interconnect and high-performance computing, optical modulators have been well developed these past few years, including ultrahigh-speed microring and microdisk modulators. In this paper, a comparison between microring and microdisk modulators is well analyzed in terms of dimensions, static and dynamic power consumption, and fabrication tolerance. The results show that microdisks have advantages over microrings in these aspects, which gives instructions to the chip design of high-density integrated systems for optical interconnects and optical computing.

  19. Hypersonic evanescent waves generated with a planar spiral coil.

    Science.gov (United States)

    Stevenson, A C; Araya-Kleinsteuber, B; Sethi, R S; Mehta, H M; Lowe, C R

    2003-09-01

    A planar spiral coil has been used to induce hypersonic evanescent waves in a quartz substrate with the unique ability to focus the acoustic wave down onto the chemical recognition layer. These special sensing conditions were achieved by investigating the application of a radio frequency current to a coaxial waveguide and spiral coil, so that wideband repeating electrical resonance conditions could be established over the MHz to GHz frequency range. At a selected operating frequency of 1.09 GHz, the evanescent wave depth of a quartz crystal hypersonic resonance is reduced to 17 nm, minimising unwanted coupling to the bulk fluid. Verification of the validity of the hypersonic resonance was carried out by characterising the system electrically and acoustically: Impedance calculations of the combined coil and coaxial waveguide demonstrated an excellent fit to the measured data, although above 400 MHz a transition zone was identified where unwanted impedance is parasitic of the coil influence efficiency, so the signal-to-noise ratio is reduced from 3000 to 300. Acoustic quartz crystal resonances at intervals of precisely 13.2138 MHz spacing, from the 6.6 MHz ultrasonic range and onto the desired hypersonic range above 1 GHz, were incrementally detected. Q factor measurements demonstrated that reductions in energy lost from the resonator to the fluid interface were consistent with the anticipated shrinkage of the evanescent wave with increasing operating frequency. Amplitude and frequency reduction in contact with a glucose solution was demonstrated at 1.09 GHz. The complex physical conditions arising at the solid-liquid interface under hypersonic entrainment are discussed with respect to acceleration induced slippage, rupture, longitudinal and shear radiation and multiphase relaxation affects.

  20. Evanescent waves and deaf bands in sonic crystals

    Directory of Open Access Journals (Sweden)

    V. Romero-García

    2011-12-01

    Full Text Available The properties of sonic crystals (SC are theoretically investigated in this work by solving the inverse problem k(ω using the extended plane wave expansion (EPWE. The solution of the resulting eigenvalue problem gives the complex band structure which takes into account both the propagating and the evanescent modes. In this work we show the complete mathematical formulation of the EPWE for SC and the supercell approximation for its use in both a complete SC and a SC with defects. As an example we show a novel interpretation of the deaf bands in a complete SC in good agreement with multiple scattering simulations.

  1. Evanescent-wave proton postaccelerator driven by intense THz pulse

    OpenAIRE

    L. Pálfalvi; J. A. Fülöp; Gy. Tóth; J. Hebling

    2014-01-01

    Hadron therapy motivates research dealing with the production of particle beams with ∼100  MeV/nucleon energy and relative energy fluctuation on the order of 1%. Laser-driven accelerators produce ion beams with only tens of MeV/nucleon energy and an extremely broad spectra. Here, a novel method is proposed for postacceleration and monochromatization of particles, leaving the laser-driven accelerator, by using intense THz pulses. It is based on further developing the idea of using the evanesce...

  2. Evanescent waves and deaf bands in sonic crystals

    Science.gov (United States)

    Romero-García, V.; Garcia-Raffi, L. M.; Sánchez-Pérez, J. V.

    2011-12-01

    The properties of sonic crystals (SC) are theoretically investigated in this work by solving the inverse problem k(ω) using the extended plane wave expansion (EPWE). The solution of the resulting eigenvalue problem gives the complex band structure which takes into account both the propagating and the evanescent modes. In this work we show the complete mathematical formulation of the EPWE for SC and the supercell approximation for its use in both a complete SC and a SC with defects. As an example we show a novel interpretation of the deaf bands in a complete SC in good agreement with multiple scattering simulations.

  3. Atypical presentation of multiple evanescent white dot syndrome (MEWDS).

    Science.gov (United States)

    Yenerel, Nursal Melda; Kucumen, Beril; Gorgun, Ebru; Dinc, Umut Asli

    2008-01-01

    To present fundus autofluorescence (FAF), indocyanine green angiography (ICGA), and microperimetry (MP) findings of a patient with multiple evanescent white dot syndrome (MEWDS). Observational case report. A 30-year-old woman with blurry vision was referred for evaluation. Fundus examination revealed only foveal granularity. FAF showed hyperautofluorescent spots, although they were not visible clinically. On ICGA, matching areas were hypofluorescent. Microperimetry revealed mean sensitivity decrease. The resolution of the symptoms was followed by disappearance of these spots in FAF and ICGA and increase of mean macular sensitivity in MP. FAF is a noninvasive imaging technique that might help in the differential diagnosis of chorioretinal pathologies.

  4. Moisture and salt monitoring in concrete by evanescent field dielectrometry

    Science.gov (United States)

    Riminesi, C.; Marie-Victoire, E.; Bouichou, M.; Olmi, R.

    2017-01-01

    Monitoring the water content and detecting the presence of soluble salts in concrete is a key issue for its maintenance. Evanescent field dielectrometry, originally developed for the diagnostics of frescoes and mural paintings, is proposed as a tool for monitoring the decay of cement-based materials. A measuring system, based on a scalar network analyzer and a resonant probe, has been realized and tested on concrete samples taken from historical buildings in France or purposely developed in the laboratory. Measurements on water-saturated and oven-dry samples provide the basis for calibrating the instrument for on site monitoring of concrete historical buildings, sculptures and cement-based artifacts.

  5. Integrated graphene based modulators enabled by interfacing plasmonic slot and silicon waveguides

    DEFF Research Database (Denmark)

    Xiao, Sanshui

    Graphene has offered a new paradigm for extremely fast and active optoelectronic devices due to its unique electronic and optical properties [1]. With the combination of high-index dielectric waveguides/resonators, several integrated graphene-based optical modulators have already been demonstrated...

  6. Experimental study of the evanescent-wave photonic sensors response in presence of molecular beacon conformational changes.

    Science.gov (United States)

    Ruiz-Tórtola, Ángela; Prats-Quílez, Francisco; Gónzalez-Lucas, Daniel; Bañuls, María-José; Maquieira, Ángel; Wheeler, Guy; Dalmay, Tamas; Griol, Amadeu; Hurtado, Juan; Bohlmann, Helge; Götzen, Reiner; García-Rupérez, Jaime

    2018-04-17

    An experimental study of the influence of the conformational change suffered by molecular beacon (MB) probes -upon the biorecognition of nucleic acid target oligonucleotides over evanescent wave photonic sensors- is reported. To this end, high sensitivity photonic sensors based on silicon photonic bandgap (PBG) structures were used, where the MB probes were immobilized via their 5' termination. Those MBs incorporate a biotin moiety close to their 3' termination in order to selectively bind a streptavidin molecule to them. The different photonic sensing responses obtained towards the target oligonucleotide detection, when the streptavidin molecule was bound to the MB probes or not, demonstrate the conformational change suffered by the MB upon hybridization, which promotes the displacement of the streptavidin molecule away from the surface of the photonic sensing structure. Schematic diagram of the PBG sensing structure on which the streptavidin-labeled MB probes were immobilized. This article is protected by copyright. All rights reserved.

  7. Effect of energy emission from evanescent electromagnetic wave at scattering by a dielectric structure

    Energy Technology Data Exchange (ETDEWEB)

    Gulyaev, Yu.V. [Institute of Radioengineering and Electronics of the Russian Academy of Sciences, 125009 Moscow (Russian Federation); Barabanenkov, Yu.N. [Institute of Radioengineering and Electronics of the Russian Academy of Sciences, 125009 Moscow (Russian Federation)]. E-mail: yu.barab@mail.ip.sitek.net; Barabanenkov, M.Yu. [Institute of Microelectronics Technology and High Purity Materials of the Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region (Russian Federation); Nikitov, S.A. [Institute of Radioengineering and Electronics of the Russian Academy of Sciences, 125009 Moscow (Russian Federation)

    2005-02-21

    We present an optical theorem for evanescent (near field) electromagnetic wave scattering by a dielectric structure. The derivation is based on the formalism of angular spectrum wave amplitudes. The optical theorem shows that an energy flux at scattering is emitted in the direction of incident evanescent wave decay.

  8. Thermal transport contributed by the torsional phonons in cylindrical nanowires: Role of evanescent modes

    International Nuclear Information System (INIS)

    Xie, Zhong-Xiang; Zhang, Yong; Zhang, Li-Fu; Fan, Dian-Yuan

    2017-01-01

    Thermal transport contributed by the torsional phonons in cylindrical nanowires is investigated by using the isotropic elastic continuum theory. The numerical calculations for both the concavity-shaped and convexity-shaped cylindrical structures are made to reveal the role of the evanescent modes. Results show that the evanescent modes play an important role in influencing the thermal transport in such structures. For the concavity-shaped cylindrical nanowire, the evanescent modes can enhance the thermal conductance by about 20 percent, while for the convexity-shaped cylindrical nanowire, the evanescent modes can suppress the thermal conductance by 6 percent. It is also shown that the influence of the evanescent modes on the thermal conductance is strongly related to the attenuation length of the evanescent modes. A brief analysis of these results is given. - Highlights: • The evanescent modes play an important role in influencing thermal transport contributed by torsional phonons in cylindrical nanowires. • For the concavity-shaped cylindrical nanowire, the evanescent modes can enhance the thermal conductance by about 20 percent, while for the convexity-shaped cylindrical nanowire, they can suppress the thermal conductance by 6 percent.

  9. Thermal transport contributed by the torsional phonons in cylindrical nanowires: Role of evanescent modes

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Zhong-Xiang [SZU-NUS Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002 (China); Zhang, Yong [Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002 (China); Zhang, Li-Fu, E-mail: zhanglifu68@hotmail.com [SZU-NUS Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Fan, Dian-Yuan [SZU-NUS Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China)

    2017-05-03

    Thermal transport contributed by the torsional phonons in cylindrical nanowires is investigated by using the isotropic elastic continuum theory. The numerical calculations for both the concavity-shaped and convexity-shaped cylindrical structures are made to reveal the role of the evanescent modes. Results show that the evanescent modes play an important role in influencing the thermal transport in such structures. For the concavity-shaped cylindrical nanowire, the evanescent modes can enhance the thermal conductance by about 20 percent, while for the convexity-shaped cylindrical nanowire, the evanescent modes can suppress the thermal conductance by 6 percent. It is also shown that the influence of the evanescent modes on the thermal conductance is strongly related to the attenuation length of the evanescent modes. A brief analysis of these results is given. - Highlights: • The evanescent modes play an important role in influencing thermal transport contributed by torsional phonons in cylindrical nanowires. • For the concavity-shaped cylindrical nanowire, the evanescent modes can enhance the thermal conductance by about 20 percent, while for the convexity-shaped cylindrical nanowire, they can suppress the thermal conductance by 6 percent.

  10. Noise evaluation of silicon strip super-module with ABCN250 readout chips for the ATLAS detector upgrade at the High Luminosity LHC

    Energy Technology Data Exchange (ETDEWEB)

    Todome, K., E-mail: todome@hep.phys.titech.ac.jp [Department of Physics, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8551 (Japan); Solid State Div., Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Jinnouchi, O. [Department of Physics, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8551 (Japan); Solid State Div., Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Clark, A.; Barbier, G.; Cadoux, F.; Favre, Y.; Ferrere, D.; Gonzalez-Sevilla, S.; Iacobucci, G.; La Marra, D.; Perrin, E.; Weber, M. [DPNC, University of Geneva, CH-1211 Geneva 4 (Switzerland); Solid State Div., Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Ikegami, Y.; Nakamura, K.; Takubo, Y.; Unno, Y. [Institute of Particle and Nuclear Study, KEK, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Solid State Div., Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Takashima, R. [Department of Science Education, Kyoto University of Education, Kyoto 612-8522 (Japan); Solid State Div., Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Tojo, J. [Department of Physics, Faculty of Science, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395 (Japan); Solid State Div., Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Kono, T. [Ochadai Academic Production, Ochanomizu University, 2-1-1, Otsuka, Bunkyo-ku, Tokyo 112-8610 (Japan); Solid State Div., Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); and others

    2016-09-21

    Toward High Luminosity LHC (HL-LHC), the whole ATLAS inner tracker will be replaced, including the semiconductor tracker (SCT) which is the silicon micro strip detector for tracking charged particles. In development of the SCT, integration of the detector is the important issue. One of the concepts of integration is the “super-module” in which individual modules are assembled to produce the SCT ladder. A super-module prototype has been developed to demonstrate its functionality. One of the concerns in integrating the super-modules is the electrical coupling between each module, because it may increase intrinsic noise of the system. To investigate the electrical performance of the prototype, the new Data Acquisition (DAQ) system has been developed by using SEABAS. The electric performance of the super-module prototype, especially the input noise and random noise hit rate, was investigated by using SEABAS system.

  11. Continuous-wave operation and 10-Gb/s direct modulation of InAsP/InP sub-wavelength nanowire laser on silicon photonic crystal

    Directory of Open Access Journals (Sweden)

    Masato Takiguchi

    2017-04-01

    Full Text Available We demonstrated sub-wavelength (∼111 nm diameter single nanowire (NW continuous wave (CW lasers on silicon photonic crystal in the telecom-band with direct modulation at 10 Gb/s by optical pumping at cryogenic temperatures. To estimate the small signal response and pseudo-random bit sequence (PRBS modulation of our CW lasers, we employed a new signal detection technique that employs a superconducting single photon detector and a time-correlated single photon counting module. The results showed that our NW laser was unambiguously modulated at above 10 Gb/s and an open eye pattern was obtained. This is the first demonstration of a telecom-band CW NW laser with high-speed PRBS modulation.

  12. 26+ Year Old Photovoltaic Power Plant: Degradation and Reliability Evaluation of Crystalline Silicon Modules -- South Array

    Science.gov (United States)

    Olakonu, Kolapo

    As the use of photovoltaic (PV) modules in large power plants continues to increase globally, more studies on degradation, reliability, failure modes, and mechanisms of field aged modules are needed to predict module life expectancy based on accelerated lifetime testing of PV modules. In this work, a 26+ year old PV power plant in Phoenix, Arizona has been evaluated for performance, reliability, and durability. The PV power plant, called Solar One, is owned and operated by John F. Long's homeowners association. It is a 200 kW dc, standard test conditions (STC) rated power plant comprised of 4000 PV modules or frameless laminates, in 100 panel groups (rated at 175 kW ac). The power plant is made of two center-tapped bipolar arrays, the north array and the south array. Due to a limited time frame to execute this large project, this work was performed by two masters students (Jonathan Belmont and Kolapo Olakonu) and the test results are presented in two masters theses. This thesis presents the results obtained on the south array and the other thesis presents the results obtained on the north array. Each of these two arrays is made of four sub arrays, the east sub arrays (positive and negative polarities) and the west sub arrays (positive and negative polarities), making up eight sub arrays. The evaluation and analyses of the power plant included in this thesis consists of: visual inspection, electrical performance measurements, and infrared thermography. A possible presence of potential induced degradation (PID) due to potential difference between ground and strings was also investigated. Some installation practices were also studied and found to contribute to the power loss observed in this investigation. The power output measured in 2011 for all eight sub arrays at STC is approximately 76 kWdc and represents a power loss of 62% (from 200 kW to 76 kW) over 26+ years. The 2011 measured power output for the four south sub arrays at STC is 39 kWdc and represents a power

  13. Evanescent Wave Fiber Optic Biosensor for Salmonella Detection in Food

    Directory of Open Access Journals (Sweden)

    Arun K. Bhunia

    2009-07-01

    Full Text Available Salmonella enterica is a major food-borne pathogen of world-wide concern. Sensitive and rapid detection methods to assess product safety before retail distribution are highly desirable. Since Salmonella is most commonly associated with poultry products, an evanescent wave fiber-optic assay was developed to detect Salmonella in shell egg and chicken breast and data were compared with a time-resolved fluorescence (TRF assay. Anti-Salmonella polyclonal antibody was immobilized onto the surface of an optical fiber using biotin-avidin interactions to capture Salmonella. Alexa Fluor 647-conjugated antibody (MAb 2F-11 was used as the reporter. Detection occurred when an evanescent wave from a laser (635 nm excited the Alexa Fluor and the fluorescence was measured by a laser-spectrofluorometer at 710 nm. The biosensor was specific for Salmonella and the limit of detection was established to be 103 cfu/mL in pure culture and 104 cfu/mL with egg and chicken breast samples when spiked with 102 cfu/mL after 2–6 h of enrichment. The results indicate that the performance of the fiber-optic sensor is comparable to TRF, and can be completed in less than 8 h, providing an alternative to the current detection methods.

  14. Stiffness Customization and Patterning for Property Modulation of Silicone-Based Soft Pneumatic Actuators.

    Science.gov (United States)

    Sun, Yi; Yap, Hong Kai; Liang, Xinquan; Guo, Jin; Qi, Peng; Ang, Marcelo H; Yeow, Chen-Hua

    2017-09-01

    Soft pneumatic actuators (SPAs), as novel types of motion drivers for robotic devices, excel in many applications, such as rehabilitation and biomimicry, which demand compliance and softness. To further expand their scope of utilization, the SPAs should be customizable to meet the distinctive requirements of different applications. This article proposes a novel perspective on the SPA working mechanism based on stiffness distribution and then presents a versatile method called stiffness customization and patterning (SCP) for SPA body stiffness layout as a novel attempt to customize SPAs with distinctive properties. We fabricated a hybrid type of material combining unstretchable material and silicone with customizable aggregated elasticity. The tensile results showed that embedding unstretchable material directly increases the stiffness of the hybrid material sample, and our stress-strain model for SCP is able to adequately predict the elasticity of hybrid samples with specific material ratios. By applying this approach to bending-type SPAs, we are able to mitigate SPA buckling, a main failure mode of SPAs, and improve the SPA tip force by using hybrid material with globally increased stiffness. We also diversify bending modalities with different stiffness configurations in the hybrid material. SCP offers numerous ways to engineer SPAs for more applications.

  15. Leaf trajectory verification during dynamic intensity modulated radiotherapy using an amorphous silicon flat panel imager

    International Nuclear Information System (INIS)

    Sonke, Jan-Jakob; Ploeger, Lennert S.; Brand, Bob; Smitsmans, Monique H.P.; Herk, Marcel van

    2004-01-01

    An independent verification of the leaf trajectories during each treatment fraction improves the safety of IMRT delivery. In order to verify dynamic IMRT with an electronic portal imaging device (EPID), the EPID response should be accurate and fast such that the effect of motion blurring on the detected moving field edge position is limited. In the past, it was shown that the errors in the detected position of a moving field edge determined by a scanning liquid-filled ionization chamber (SLIC) EPID are negligible in clinical practice. Furthermore, a method for leaf trajectory verification during dynamic IMRT was successfully applied using such an EPID. EPIDs based on amorphous silicon (a-Si) arrays are now widely available. Such a-Si flat panel imagers (FPIs) produce portal images with superior image quality compared to other portal imaging systems, but they have not yet been used for leaf trajectory verification during dynamic IMRT. The aim of this study is to quantify the effect of motion distortion and motion blurring on the detection accuracy of a moving field edge for an Elekta iViewGT a-Si FPI and to investigate its applicability for the leaf trajectory verification during dynamic IMRT. We found that the detection error for a moving field edge to be smaller than 0.025 cm at a speed of 0.8 cm/s. Hence, the effect of motion blurring on the detection accuracy of a moving field edge is negligible in clinical practice. Furthermore, the a-Si FPI was successfully applied for the verification of dynamic IMRT. The verification method revealed a delay in the control system of the experimental DMLC that was also found using a SLIC EPID, resulting in leaf positional errors of 0.7 cm at a leaf speed of 0.8 cm/s

  16. Programming Nanoparticles in Multiscale: Optically Modulated Assembly and Phase Switching of Silicon Nanoparticle Array.

    Science.gov (United States)

    Wang, Letian; Rho, Yoonsoo; Shou, Wan; Hong, Sukjoon; Kato, Kimihiko; Eliceiri, Matthew; Shi, Meng; Grigoropoulos, Costas P; Pan, Heng; Carraro, Carlo; Qi, Dongfeng

    2018-03-27

    Manipulating and tuning nanoparticles by means of optical field interactions is of key interest for nanoscience and applications in electronics and photonics. We report scalable, direct, and optically modulated writing of nanoparticle patterns (size, number, and location) of high precision using a pulsed nanosecond laser. The complex nanoparticle arrangement is modulated by the laser pulse energy and polarization with the particle size ranging from 60 to 330 nm. Furthermore, we report fast cooling-rate induced phase switching of crystalline Si nanoparticles to the amorphous state. Such phase switching has usually been observed in compound phase change materials like GeSbTe. The ensuing modification of atomic structure leads to dielectric constant switching. Based on these effects, a multiscale laser-assisted method of fabricating Mie resonator arrays is proposed. The number of Mie resonators, as well as the resonance peaks and dielectric constants of selected resonators, can be programmed. The programmable light-matter interaction serves as a mechanism to fabricate optical metasurfaces, structural color, and multidimensional optical storage devices.

  17. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

    OpenAIRE

    Poley, Luise; Bloch, Ingo; Edwards, Sam; Friedrich, Conrad; Gregor, Ingrid-Maria; Jones, Tim; Lacker, Heiko; Pyatt, Simon; Rehnisch, Laura; Sperlich, Dennis; Wilson, John

    2015-01-01

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy gl...

  18. The fabrication and visible-near-infrared optical modulation of vanadium dioxide/silicon dioxide composite photonic crystal structure

    Science.gov (United States)

    Liang, Jiran; Li, Peng; Song, Xiaolong; Zhou, Liwei

    2017-12-01

    We demonstrated a visible and near-infrared light tunable photonic nanostructure, which is composed of vanadium dioxide (VO2) thin film and silicon dioxide (SiO2) ordered nanosphere arrays. The vanadium films were sputtered on two-dimensional (2D) SiO2 sphere arrays. VO2 thin films were prepared by rapid thermal annealing (RTA) method with different oxygen flow rates. The close-packed VO2 shell formed a continuous surface, the composition of VO2 films in the structure changed when the oxygen flow rates increased. The 2D VO2/SiO2 composite photonic crystal structure exhibited transmittance trough tunability and near-infrared (NIR) transmittance modulation. When the oxygen flow rate increased from 3 slpm to 4 slpm, the largest transmittance trough can be regulated from 904 to 929 nm at low temperature, the transmittance troughs also appear blue shift when the VO2 phase changes from insulator to metal. The composite nanostructure based on VO2 films showed visible transmittance tunability, which would provide insights into the glass color changing in smart windows.

  19. The fabrication and visible-near-infrared optical modulation of vanadium dioxide/silicon dioxide composite photonic crystal structure

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Jiran; Li, Peng; Song, Xiaolong; Zhou, Liwei [Tianjin University, School of Microelectronics, Tianjin (China)

    2017-12-15

    We demonstrated a visible and near-infrared light tunable photonic nanostructure, which is composed of vanadium dioxide (VO{sub 2}) thin film and silicon dioxide (SiO{sub 2}) ordered nanosphere arrays. The vanadium films were sputtered on two-dimensional (2D) SiO{sub 2} sphere arrays. VO{sub 2} thin films were prepared by rapid thermal annealing (RTA) method with different oxygen flow rates. The close-packed VO{sub 2} shell formed a continuous surface, the composition of VO{sub 2} films in the structure changed when the oxygen flow rates increased. The 2D VO{sub 2}/SiO{sub 2} composite photonic crystal structure exhibited transmittance trough tunability and near-infrared (NIR) transmittance modulation. When the oxygen flow rate increased from 3 slpm to 4 slpm, the largest transmittance trough can be regulated from 904 to 929 nm at low temperature, the transmittance troughs also appear blue shift when the VO{sub 2} phase changes from insulator to metal. The composite nanostructure based on VO{sub 2} films showed visible transmittance tunability, which would provide insights into the glass color changing in smart windows. (orig.)

  20. Adaptive optics scanning laser ophthalmoscope using liquid crystal on silicon spatial light modulator: Performance study with involuntary eye movement

    Science.gov (United States)

    Huang, Hongxin; Toyoda, Haruyoshi; Inoue, Takashi

    2017-09-01

    The performance of an adaptive optics scanning laser ophthalmoscope (AO-SLO) using a liquid crystal on silicon spatial light modulator and Shack-Hartmann wavefront sensor was investigated. The system achieved high-resolution and high-contrast images of human retinas by dynamic compensation for the aberrations in the eyes. Retinal structures such as photoreceptor cells, blood vessels, and nerve fiber bundles, as well as blood flow, could be observed in vivo. We also investigated involuntary eye movements and ascertained microsaccades and drifts using both the retinal images and the aberrations recorded simultaneously. Furthermore, we measured the interframe displacement of retinal images and found that during eye drift, the displacement has a linear relationship with the residual low-order aberration. The estimated duration and cumulative displacement of the drift were within the ranges estimated by a video tracking technique. The AO-SLO would not only be used for the early detection of eye diseases, but would also offer a new approach for involuntary eye movement research.

  1. Development of a very fast spectral response measurement system for analysis of hydrogenated amorphous silicon solar cells and modules

    International Nuclear Information System (INIS)

    Rodríguez, J.A.; Fortes, M.; Alberte, C.; Vetter, M.; Andreu, J.

    2013-01-01

    Highlights: ► Spectral response equipment for measuring a-Si:H solar cells in a few seconds. ► Equipment based on 16 LEDs with simultaneous illumination of the solar cell. ► The current generated by each LED is analyzed by a Fast Fourier Transform. ► Cheap equipment without lock-in technology for the current measurement. ► Measurement error vs. conventional measurement less than 1% in J sc . - Abstract: An important requirement for a very fast spectral response measurement system is the simultaneous illumination of the solar cell at multiple well defined wavelengths. Nowadays this can be done by means of light emitting diodes (LEDs) available for a multitude of wavelengths. For the purpose to measure the spectral response (SR) of amorphous silicon solar cells a detailed characterization of LEDs emitting in the wavelength range from 300 nm to 800 nm was performed. In the here developed equipment the LED illumination is modulated in the frequency range from 100 Hz to 200 Hz and the current generated by each LED is analyzed by a Fast Fourier Transform (FFT) to determine the current component corresponding to each wavelength. The equipment provides a signal to noise ratio of 2–4 orders of magnitude for individual wavelengths resulting in a precise measurement of the SR over the whole wavelength range. The difference of the short circuit current determined from the SR is less than 1% in comparison to a conventional system with monochromator.

  2. Dosimetric properties of an amorphous silicon electronic portal imaging device for verification of dynamic intensity modulated radiation therapy

    International Nuclear Information System (INIS)

    Greer, Peter B.; Popescu, Carmen C.

    2003-01-01

    Dosimetric properties of an amorphous silicon electronic portal imaging device (EPID) for verification of dynamic intensity modulated radiation therapy (IMRT) delivery were investigated. The EPID was utilized with continuous frame-averaging during the beam delivery. Properties studied included effect of buildup, dose linearity, field size response, sampling of rapid multileaf collimator (MLC) leaf speeds, response to dose-rate fluctuations, memory effect, and reproducibility. The dependence of response on EPID calibration and a dead time in image frame acquisition occurring every 64 frames were measured. EPID measurements were also compared to ion chamber and film for open and wedged static fields and IMRT fields. The EPID was linear with dose and dose rate, and response to MLC leaf speeds up to 2.5 cm s-1 was found to be linear. A field size dependent response of up to 5% relative to d max ion-chamber measurement was found. Reproducibility was within 0.8% (1 standard deviation) for an IMRT delivery recorded at intervals over a period of one month. The dead time in frame acquisition resulted in errors in the EPID that increased with leaf speed and were over 20% for a 1 cm leaf gap moving at 1.0 cm s-1. The EPID measurements were also found to depend on the input beam profile utilized for EPID flood-field calibration. The EPID shows promise as a device for verification of IMRT, the major limitation currently being due to dead-time in frame acquisition

  3. Silicon Carbide (SiC) Device and Module Reliability, Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field

    Science.gov (United States)

    2016-05-01

    AFRL-RQ-WP-TR-2016-0108 SILICON CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled...CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field 5a...Shukla, K., “Thermo-fluid dynamics of Loop Heat Pipe Operation,” International Communications in Heat and Mass Transfer , Vol. 35, No. 8, 2008, pp

  4. Radioactivation of silicon tracker modules in high-luminosity hadron collider radiation environments

    CERN Document Server

    Dawson, I; Buttar, C; Cindro, V; Mandic, I

    2003-01-01

    One of the consequences of operating detector systems in harsh radiation environments will be radioactivation of the components. This will certainly be true in experiments such as ATLAS and CMS, which are currently being built to exploit the physics potential at CERN's Large Hadron Collider. If the levels of radioactivity and corresponding dose rates are significant, then there will be implications for any access or maintenance operations. This paper presents predictions for the radioactivation of ATLAS's Semi- Conductor Tracker (SCT) barrel system, based on both calculations and measurements. It is shown that both neutron capture and high-energy hadron reactions must be taken into account. The predictions also show that the SCT barrel-module should not pose any serious radiological problems after operation in high radiation environments.

  5. On use of radial evanescence remain term in kinematic hardening

    International Nuclear Information System (INIS)

    Geyer, P.

    1995-10-01

    A fine modelling of the material' behaviour can be necessary to study the mechanical strength of nuclear power plant' components under cyclic loads. Ratchetting is one of the last phenomena for which numerical models have to be improved. We discuss in this paper on use of radial evanescence remain term in kinematic hardening to improve the description of ratchetting in biaxial loading tests. It's well known that Chaboche elastoplastic model with two non linear kinematic hardening variables initially proposed by Armstrong and Frederick, usually over-predicts accumulation of ratchetting strain. Burlet and Cailletaud proposed in 1987 a non linear kinematic rule with a radial evanescence remain term. The two models lead to identical formulation for proportional loadings. In the case of a biaxial loading test (primary+secondary loading), Burlet and Cailletaud model leads to accommodation, when Chaboche one's leads to ratchetting with a constant increment of strain. So we can have an under-estimate with the first model and an over-estimate with the second. An easy method to improve the description of ratchetting is to combine the two kinematic rules. Such an idea is already used by Delobelle in his model. With analytical results in the case of tension-torsion tests, we show in a first part of the paper, the interest of radial evanescence remain term in the non linear kinematic rule to describe ratchetting: we give the conditions to get adaptation, accommodation or ratchetting and the value of the strain increment in the last case. In the second part of the paper, we propose to modify the elastoplastic Chaboche model by coupling the two types of hardening by means of two scalar parameters which can be identified independently on biaxial loading tests. Identification of these two parameters returns to speculate on the directions of strain in order to adjust the ratchetting to experimental observations. We use the experimental results on the austenitic steel 316L at room

  6. Study of a coronagraphic mask using evanescent waves.

    Science.gov (United States)

    Buisset, Christophe; Rabbia, Yves; Lepine, Thierry; Alagao, Mary-Angelie; Ducrot, Elsa; Poshyachinda, Saran; Soonthornthum, Boonrucksar

    2017-04-03

    The evanescent wave coronagraph (EvWaCo) is a specific kind of band-limited coronagraph using the frustrated total internal reflection phenomenon to produce the coronagraphic effect (removing starlight from the image plane in order to make the stellar environment detectable). In this paper, we present a theoretical and experimental study of the EvWaCo coronagraphic mask. First, we calculate the theoretical transmission and we show that this mask is partially achromatic. Then, we present the experimental results obtained in unpolarized light at the wavelength λ≈900 nm and relative spectral bandwidth Δλ/λ≈6%. In particular, we show that the coronagraph provides a contrast down to a few 10-6 at an angular distance of about ten Airy radii.

  7. On use of radial evanescence remain term in kinematic hardening

    International Nuclear Information System (INIS)

    Geyer, P.

    1995-01-01

    This paper presents the interest which lies in non-linear kinematic hardening rule with radial evanescence remain term as proposed for modelling multiaxial ratchetting. From analytical calculations in the case of the tension/torsion test, this ratchetting is compared with that proposed by Armstrong and Frederick. A modification is then proposed for Chaboche's elastoplastic model with two non-linear kinematic variables, by coupling the two types of hardening by means of two scalar parameters. Identification of these two parameters returns to speculate on the directions of strain in order to adjust the ratchetting to experimental observations. Using biaxial ratchetting tests on stainless steel 316 L specimens at ambient temperature, it is shown that satisfactory modelling of multiaxial ratchetting is obtained. (author). 4 refs., 5 figs

  8. [Indocyanine green angiography in "multiple evanescent white dot syndrome" (MEWDS)].

    Science.gov (United States)

    Desarnaulds, A B; Borruat, F X; Herbort, C P; de Courten, C

    1998-05-01

    Multiple evanescent white dot syndrome (MEWDS) is a benign acquired chorioretinal disorder occurring mostly in young adults. Its pathophysiology is unknown. To describe the results of indocyanine green angiography (ICGA) in MEWDS. Four patients with MEWDS were investigated by ICGA. In all cases, ICGA revealed numerous choroidal hypofluorescent lesions that largely outnumbered the lesions visible with either fundoscopy or fluorescein angiography. Three cases showed a blind spot enlargement on perimetry associated with the presence of a large peripapillary hypofluorescent zone on ICGA. Three cases showed macular granularity on fundoscopy correlating with a significant subfoveal hypfluorescent lesion on ICGA. Evolution was always favorable with disappearance of the hypofluorescent choroidal lesions. Our results confirm that MEWDS is primarily a choroidal disorder. The blind spot enlargement and the macular granularity, frequently detected in MEWDS, result from larger peripapillary and subfoveal choroidal lesions.

  9. Entropy Generation in Natural Convection Under an Evanescent Magnetic Field

    International Nuclear Information System (INIS)

    Magherbi, Mourad; El Jery, Atef; Ben Brahim, Ammar

    2009-01-01

    We numerically study the effect of an externally-evanescent magnetic field on total entropy generation in conducting and non-reactive fluid enclosed in a square cavity. The horizontal walls of the enclosure are assumed to be insulated while the vertical walls are kept isothermal. A control volume finite element method is used to solve the conservation equations at Prandtl number of 0.71. The values of relaxation time of the magnetic field are chosen, so that the Lorentz force acts only in the transient state of entropy generation in natural convection. The total entropy generation was calculated for fixed value of irreversibility distribution ratio, different relaxation time varying from 0 to 1/5 and Grashof number equal to 10 5

  10. Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

    Energy Technology Data Exchange (ETDEWEB)

    Poettgens, M.

    2007-11-22

    CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m{sup 2}, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the

  11. Nanoparticle sorting in silicon waveguide arrays

    Science.gov (United States)

    Zhao, H. T.; Zhang, Y.; Chin, L. K.; Yap, P. H.; Wang, K.; Ser, W.; Liu, A. Q.

    2017-08-01

    This paper presents the optical fractionation of nanoparticles in silicon waveguide arrays. The optical lattice is generated by evanescent coupling in silicon waveguide arrays. The hotspot size is tunable by changing the refractive index of surrounding liquids. In the experiment, 0.2-μm and 0.5-μm particles are separated with a recovery rate of 95.76%. This near-field approach is a promising candidate for manipulating nanoscale biomolecules and is anticipated to benefit the biomedical applications such as exosome purification, DNA optical mapping, cell-cell interaction, etc.

  12. Development and Evaluation of a Test System for the Quality Assurance during the Mass Production of Silicon Microstrip Detector Modules for the CMS Experiment

    CERN Document Server

    Franke, Torsten

    2005-01-01

    The Compact Muon Solenoid (CMS) is one of four large-scale experiments that is going to be installed at the Large Hadron Collider (LHC) at the European Laboratory for Particle Physics (CERN). For CMS an inner tracking system entirely equipped with silicon microstrip detectors was chosen. With an active area of about 198 m2 it will be the largest tracking device of the world that was ever constructed using silicon sensors. The basic components in the construction of the tracking system are approximately 16,000 so-called modules, which are pre-assembled units consisting of the sensors, the readout electronics and a support structure. The module production is carried out by a cooperation of number of institutes and industrial companies. To ensure the operation of the modules within the harsh radiation environment extensive tests have to be performed on all components. An important contribution to the quality assurance of the modules is made by a test system of which all components were developed in Aachen. In ad...

  13. Development of a very fast spectral response measurement system for analysis of hydrogenated amorphous silicon solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, J.A., E-mail: jose.rodriguez@tsolar.eu [Dept. Technology, Development and Innovation, T-Solar Global S.A., Parque Tecnologico de Galicia, Avda. de Vigo 5, E-32900 San Cibrao das Vinas (Ourense) (Spain); Fortes, M. [Departamento de Electronica e Computacion, Universidade de Santiago de Compostela, 15782 Santiago de Compostela (Spain); Alberte, C.; Vetter, M.; Andreu, J. [Dept. Technology, Development and Innovation, T-Solar Global S.A., Parque Tecnologico de Galicia, Avda. de Vigo 5, E-32900 San Cibrao das Vinas (Ourense) (Spain)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer Spectral response equipment for measuring a-Si:H solar cells in a few seconds. Black-Right-Pointing-Pointer Equipment based on 16 LEDs with simultaneous illumination of the solar cell. Black-Right-Pointing-Pointer The current generated by each LED is analyzed by a Fast Fourier Transform. Black-Right-Pointing-Pointer Cheap equipment without lock-in technology for the current measurement. Black-Right-Pointing-Pointer Measurement error vs. conventional measurement less than 1% in J{sub sc}. - Abstract: An important requirement for a very fast spectral response measurement system is the simultaneous illumination of the solar cell at multiple well defined wavelengths. Nowadays this can be done by means of light emitting diodes (LEDs) available for a multitude of wavelengths. For the purpose to measure the spectral response (SR) of amorphous silicon solar cells a detailed characterization of LEDs emitting in the wavelength range from 300 nm to 800 nm was performed. In the here developed equipment the LED illumination is modulated in the frequency range from 100 Hz to 200 Hz and the current generated by each LED is analyzed by a Fast Fourier Transform (FFT) to determine the current component corresponding to each wavelength. The equipment provides a signal to noise ratio of 2-4 orders of magnitude for individual wavelengths resulting in a precise measurement of the SR over the whole wavelength range. The difference of the short circuit current determined from the SR is less than 1% in comparison to a conventional system with monochromator.

  14. Mechanical studies towards a silicon micro-strip super module for the ATLAS inner detector upgrade at the high luminosity LHC

    International Nuclear Information System (INIS)

    Barbier, G; Cadoux, F; Clark, A; Favre, Y; Ferrere, D; Gonzalez-Sevilla, S; Iacobucci, G; Marra, D La; Perrin, E; Seez, W; Endo, M; Hanagaki, K; Hara, K; Ikegami, Y; Nakamura, K; Takubo, Y; Terada, S; Jinnouchi, O; Nishimura, R; Takashima, R

    2014-01-01

    It is expected that after several years of data-taking, the Large Hadron Collider (LHC) physics programme will be extended to the so-called High-Luminosity LHC, where the instantaneous luminosity will be increased up to 5 × 10 34  cm −2  s −1 . For the general-purpose ATLAS experiment at the LHC, a complete replacement of its internal tracking detector will be necessary, as the existing detector will not provide the required performance due to the cumulated radiation damage and the increase in the detector occupancy. The baseline layout for the new ATLAS tracker is an all-silicon-based detector, with pixel sensors in the inner layers and silicon micro-strip detectors at intermediate and outer radii. The super-module (SM) is an integration concept proposed for the barrel strip region of the future ATLAS tracker, where double-sided stereo silicon micro-strip modules (DSM) are assembled into a low-mass local support (LS) structure. Mechanical aspects of the proposed LS structure are described

  15. On-chip all-optical wavelength conversion of multicarrier, multilevel modulation (OFDM m-QAM) signals using a silicon waveguide.

    Science.gov (United States)

    Li, Chao; Gui, Chengcheng; Xiao, Xi; Yang, Qi; Yu, Shaohua; Wang, Jian

    2014-08-01

    We report on-chip all-optical wavelength conversion of multicarrier multilevel modulation signals in a silicon waveguide. Using orthogonal frequency-division multiplexing (OFDM) combined with advanced multilevel quadrature amplitude modulation (QAM) signals (i.e., OFDM m-QAM), we experimentally demonstrate all-optical wavelength conversions of 3.2 Gbaud/s OFDM 16/32/64/128-QAM signals based on the degenerate four-wave mixing (FWM) nonlinear effect in a silicon waveguide. The measured optical signal-to-noise ratio (OSNR) penalties of wavelength conversion are ∼3  dB for OFDM 16-QAM and ∼4  dB for OFDM 32-QAM at 7% forward error correction (FEC) threshold and ∼3.5  dB for OFDM 64-QAM and ∼4.5  dB for OFDM 128-QAM at 20% FEC threshold. The observed clear constellations of converted idlers imply favorable performance obtained for silicon-waveguide-based OFDM 16/32/64/128-QAM wavelength conversions.

  16. Evanescent Acoustic Wave Scattering by Targets and Diffraction by Ripples Graduate Traineeship Award in Ocean Acoustics

    National Research Council Canada - National Science Library

    Osterhoudt, Curtis F; Marston, Philip L

    2007-01-01

    .... The purpose of his research was to improve the understanding of the way that acoustic evanescent waves interact with targets buried in sediments in situations encountered in underwater acoustics...

  17. Geometrical optics in the near field: local plane-interface approach with evanescent waves.

    Science.gov (United States)

    Bose, Gaurav; Hyvärinen, Heikki J; Tervo, Jani; Turunen, Jari

    2015-01-12

    We show that geometrical models may provide useful information on light propagation in wavelength-scale structures even if evanescent fields are present. We apply a so-called local plane-wave and local plane-interface methods to study a geometry that resembles a scanning near-field microscope. We show that fair agreement between the geometrical approach and rigorous electromagnetic theory can be achieved in the case where evanescent waves are required to predict any transmission through the structure.

  18. Exploiting total internal reflection geometry for efficient optical modulation of terahertz light

    Directory of Open Access Journals (Sweden)

    Xudong Liu

    2016-10-01

    Full Text Available Efficient methods to modulate terahertz (THz light are essential for realizing rapid THz imaging and communication applications. Here we report a novel THz modulator which utilizes the evanescent wave in a total internal reflection setup coupled with a conductive interface to enhance the attenuation efficiency of THz light. This approach makes it possible to achieve close to 100% modulation with a small interface conductivity of 12 mS. The frequency dependence of this technique is linked to the optical properties of the materials: a material with close to frequency independent conductivity that is also controllable will result in an achromatic modulation response, and the device performance can be optimized further by tuning the internal reflection angle. In this work, we focus on applying the technique in the terahertz frequency range. Using an LED array with a pump intensity of 475 mW/cm2 to produce carriers in a silicon wafer, we have achieved a modulation depth of up to 99.9% in a broad frequency range of 0.1 THz–0.8 THz. The required pumping power for the generation of the required free carriers is low because the sheet conductivity needed is far less than required for traditional transmission techniques. Consequently, the device can be modulated by an LED making it a very practical, low cost, and scalable solution for THz modulation.

  19. Construction and beam-tests of silicon-tungsten and scintillator-SiPM modules for the CMS High Granularity Calorimeter for HL-LHC

    CERN Document Server

    Chang, Yung-wei

    2018-01-01

    A High Granularity Calorimeter (HGCAL) is being designed to replace the existing endcap calorimeters in CMS for the HL-LHC era. It features unprecedented transverse and longitudinal segmentation for both electromagnetic (ECAL) and hadronic (HCAL) compartments, with silicon sensors being chosen for the high-pseudorapidity regions due to their radiation tolerance. The remainder of the HGCAL, in the lower radiation environment, will use plastic scintillator with on-tile SiPM readout. Prototype hexagonal silicon modules, featuring a new Skiroc2-CMS front-end chip, together with a modified version of the scintillator-SiPM CALICE AHCAL, have been built and tested in beams at CERN in 2017. In this poster, we present measurements of noise, calibration, shower shapes and performance with electrons, pions and muons.

  20. A study on high NA and evanescent imaging with polarized illumination

    Science.gov (United States)

    Yang, Seung-Hune

    Simulation techniques are developed for high NA polarized microscopy with Babinet's principle, partial coherence and vector diffraction for non-periodic geometries. A mathematical model for the Babinet approach is developed and interpreted. Simulation results of the Babinet's principle approach are compared with those of Rigorous Coupled Wave Theory (RCWT) for periodic structures to investigate the accuracy of this approach and its limitations. A microscope system using a special solid immersion lens (SIL) is introduced to image Blu-Ray (BD) optical disc samples without removing the protective cover layer. Aberration caused by the cover layer is minimized with a truncated SIL. Sub-surface imaging simulation is achieved by RCWT, partial coherence, vector diffraction and Babinet's Principle. Simulated results are compared with experimental images and atomic force microscopy (AFM) measurement. A technique for obtaining native and induced using a significant amount of evanescent energy is described for a solid immersion lens (SIL) microscope. Characteristics of native and induced polarization images for different object structures and materials are studied in detail. Experiments are conducted with a NA = 1.48 at lambda = 550nm microscope. Near-field images are simulated and analyzed with an RCWT approach. Contrast curve versus object spatial frequency calculations are compared with experimental measurements. Dependencies of contrast versus source polarization angles and air gap for native and induced polarization image profiles are evaluated. By using the relationship between induced polarization and topographical structure, an induced polarization image of an alternating phase shift mask (PSM) is converted into a topographical image, which shows very good agreement with AFM measurement. Images of other material structures include a dielectric grating, chrome-on-glass grating, silicon CPU structure, BD-R and BD-ROM.

  1. Quantitative Understanding on the Amplitude Decay Characteristic of the Evanescent Electromagnetic Waves Generated by Seismoelectric Conversion

    Science.gov (United States)

    Ren, Hengxin; Huang, Qinghua; Chen, Xiaofei

    2018-03-01

    We conduct numerical simulations and theoretical analyses to quantitatively study the amplitude decay characteristic of the evanescent electromagnetic (EM) waves, which has been neglected in previous studies on the seismoelectric conversion occurring at a porous-porous interface. Time slice snapshots of seismic and EM wave-fields generated by a vertical single force point source in a two-layer porous model show that evanescent EM waves can be induced at a porous-porous interface. The seismic and EM wave-fields computed for a receiver array located in a vertical line nearby the interface are investigated in detail. In addition to the direct and interface-response radiation EM waves, we identify three groups of coseismic EM fields and evanescent EM waves associated with the direct P, refracted SV-P and direct SV waves, respectively. Thereafter, we derive the mathematical expression of the amplitude decay factor of the evanescent EM waves. This mathematical expression is further validated by our numerical simulations. It turns out the amplitude decay of the evanescent EM waves generated by seismoelectric conversion is greatly dependent on the horizontal wavenumber of seismic waves. It is also found the evanescent EM waves have a higher detectability at a lower frequency range. This work provides a better understanding on the EM wave-fields generated by seismoelectric conversion, which probably will help improve the interpretation of the seismoelectric coupling phenomena associated with natural earthquakes or possibly will inspire some new ideas on the application of the seismoelectric coupling effect.

  2. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS inner detector

    International Nuclear Information System (INIS)

    Poley, Luise; Bloch, Ingo; Edwards, Sam

    2016-04-01

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives. Results from electrical tests of first prototype modules constructed using these glues are presented.

  3. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS inner detector

    Energy Technology Data Exchange (ETDEWEB)

    Poley, Luise [DESY, Zeuthen (Germany); Humboldt Univ. Berlin (Germany); Bloch, Ingo [DESY, Zeuthen (Germany); Edwards, Sam [Birmingham Univ. (United Kingdom); and others

    2016-04-15

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives. Results from electrical tests of first prototype modules constructed using these glues are presented.

  4. Construction and first beam-tests of silicon-tungsten prototype modules for the CMS High Granularity Calorimeter for HL-LHC

    CERN Document Server

    Romeo, Francesco

    2017-01-01

    The High Granularity Calorimeter (HGCAL) is the technology choice of the CMS collaboration for the endcap calorimetry upgrade planned to cope with the harsh radiation and pileup environment at the High Luminosity-LHC. The HGCAL is realized as a sampling calorimeter, including an electromagnetic compartment comprising 28 layers of silicon pad detectors with pad areas of 0.5 - 1.0 square centimetres interspersed with absorbers. Prototype modules, based on hexagonal silicon pad sensors, with 128 channels, have been constructed and tested in beams at FNAL and at CERN. The modules include many of the features required for this challenging detector, including a PCB glued directly to the sensor, using through-hole wire-bonding for signal readout and ~5mm spacing between layers - including the front-end electronics and all services. Tests in 2016 have used an existing front-end chip - Skiroc2 (designed for the CALICE experiment for ILC). We present results from first tests of these modules both in the laboratory and ...

  5. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

    Science.gov (United States)

    Poley, L.; Bloch, I.; Edwards, S.; Friedrich, C.; Gregor, I.-M.; Jones, T.; Lacker, H.; Pyatt, S.; Rehnisch, L.; Sperlich, D.; Wilson, J.

    2016-05-01

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive used initially between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). However, this glue has several disadvantages, which motivated the search for an alternative. This paper presents a study of six ultra-violet (UV) cure glues and a glue pad for possible use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, thermal conduction and shear strength. Samples were thermally cycled, radiation hardness and corrosion resistance were also determined. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives than silver loaded glue. Results from electrical tests of first prototype modules constructed using these glues are presented.

  6. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

    International Nuclear Information System (INIS)

    Poley, L.; Bloch, I.; Friedrich, C.; Gregor, I.-M.; Edwards, S.; Pyatt, S.; Wilson, J.; Jones, T.; Lacker, H.; Rehnisch, L.; Sperlich, D.

    2016-01-01

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive used initially between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). However, this glue has several disadvantages, which motivated the search for an alternative. This paper presents a study of six ultra-violet (UV) cure glues and a glue pad for possible use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, thermal conduction and shear strength. Samples were thermally cycled, radiation hardness and corrosion resistance were also determined. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives than silver loaded glue. Results from electrical tests of first prototype modules constructed using these glues are presented.

  7. Process research of non-cz silicon material. Low cost solar array project, cell and module formation research area

    Science.gov (United States)

    1982-01-01

    Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated.

  8. Low cost solar array project: Cell and module formation research area. Process research of non-CZ silicon material

    Science.gov (United States)

    1983-01-01

    Meniscus coates tests, back junction formation using a new boron containing liquid, tests of various SiO2 and boron containing liquids, pelletized silicon for replenishment during web growth, and ion implantation compatibility/feasibility study are discussed.

  9. Evanescent field: A potential light-tool for theranostics application

    Science.gov (United States)

    Polley, Nabarun; Singh, Soumendra; Giri, Anupam; Pal, Samir Kumar

    2014-03-01

    A noninvasive or minimally invasive optical approach for theranostics, which would reinforce diagnosis, treatment, and preferably guidance simultaneously, is considered to be major challenge in biomedical instrument design. In the present work, we have developed an evanescent field-based fiber optic strategy for the potential theranostics application in hyperbilirubinemia, an increased concentration of bilirubin in the blood and is a potential cause of permanent brain damage or even death in newborn babies. Potential problem of bilirubin deposition on the hydroxylated fiber surface at physiological pH (7.4), that masks the sensing efficacy and extraction of information of the pigment level, has also been addressed. Removal of bilirubin in a blood-phantom (hemoglobin and human serum albumin) solution from an enhanced level of 77 μM/l (human jaundice >50 μM/l) to ˜30 μM/l (normal level ˜25 μM/l in human) using our strategy has been successfully demonstrated. In a model experiment using chromatography paper as a mimic of biological membrane, we have shown efficient degradation of the bilirubin under continuous monitoring for guidance of immediate/future course of action.

  10. Multiple evanescent white dot syndrome associated with retinal vasculitis

    Directory of Open Access Journals (Sweden)

    Takahashi A

    2015-09-01

    Full Text Available Akihiro Takahashi, Wataru Saito, Yuki Hashimoto, Susumu Ishida Department of Ophthalmology, Hokkaido University Graduate School of Medicine, Sapporo, Japan Purpose: A recent study revealed thickening of the inner retinal layers in acute stage of multiple evanescent white dot syndrome (MEWDS; however, the pathogenesis is still unknown. We report two cases with MEWDS whose funduscopy showed obvious retinal vasculitis. Methods: Case reports. Results: Healthy myopic 16- and 27-year-old women were the cases under study. In both cases, funduscopic examination revealed multiple, faint, small, subretinal white dots at the posterior pole to the midperiphery and macular granularity oculus dexter. Retinal vascular sheathing was also observed at midperiphery. Late-phase fluorescein angiography revealed leakages corresponding to the vascular sheathing. Enhanced depth imaging optical coherence tomography revealed the discontinuity of the ellipsoid zone corresponding to the white dots and increased macular choroidal thickness. One month later, these white dots and retinal sheathing spontaneously resolved in both cases. Three months later, impairments of the outer retinal morphology and the visual acuity were restored. Conclusion: These results suggest that retinal vasculitis possibly plays a role in the pathogenesis of thickened inner retinal layers in acute stage of MEWDS. Keywords: enhanced depth imaging optical coherence tomography, choroidal thickness, inner retinal layer, retinal vascular sheathing

  11. Saturated evanescent-wave absorption of few-layer graphene-covered side-polished single-mode fiber for all-optical switching

    Science.gov (United States)

    Peng, Kaung-Jay; Wu, Chun-Lung; Lin, Yung-Hsiang; Wang, Hwai-Yung; Cheng, Chih-Hsien; Chi, Yu-Chieh; Lin, Gong-Ru

    2018-01-01

    Using the evanescent-wave saturation effect of hydrogen-free low-temperature synthesized few-layer graphene covered on the cladding region of a side-polished single-mode fiber, a blue pump/infrared probe-based all-optical switch is demonstrated with specific wavelength-dependent probe modulation efficiency. Under the illumination of a blue laser diode at 405 nm, the few-layer graphene exhibits cross-gain modulation at different wavelengths covering the C- and L-bands. At a probe power of 0.5 mW, the L-band switching throughput power variant of 16 μW results in a probe modulation depth of 3.2%. Blue shifting the probe wavelength from 1580 to 1520 nm further enlarges the switching throughput power variant to 24 mW and enhances the probe modulation depth to 5%. Enlarging the probe power from 0.5 to 1 mW further enlarges the switching throughput power variant from 25 to 58 μW to promote its probe modulation depth of up to 5.8% at 1520 nm. In contrast, the probe modulation depth degrades from 5.1% to 1.2% as the pumping power reduces from 85 to 24 mW, which is attributed to the saturable absorption of the few-layer graphene-based evanescent-wave absorber. The modulation depth at wavelength of 1550 nm under a probe power of 1 mW increases from 1.2% to 5.1%, as more carriers can be excited when increasing the blue laser power from 24 to 85 mW, whereas it decreases from 5.1% to 3.3% by increasing the input probe power from 1 to 2 mW to show an easier saturated condition at longer wavelength.

  12. arXiv Construction and beam-tests of silicon-tungsten prototype modules for the CMS High Granularity Calorimeter for HL-LHC

    CERN Document Server

    INSPIRE-00664095

    2018-02-26

    As part of its HL-LHC upgrade program, CMS is developing a High Granularity Calorimeter (HGCAL) to replace the existing endcap calorimeters. The HGCAL will be realised as a sampling calorimeter, including an electromagnetic compartment comprising 28 layers of silicon pad detectors with pad areas of 0.5–1.0 cm2 interspersed with absorbers. Prototype modules, based on 6-inch hexagonal silicon pad sensors with 128 channels, have been constructed and include many of the features required for this challenging detector. In 2016, beam tests of sampling configurations made from these modules have been conducted both at FNAL and at CERN using the Skiroc2 front-end ASIC (designed by the CALICE collaboration for ILC). In 2017, the setup has been extended with CALICE's AHCAL prototype, a scinitillator based sampling calorimeter, and it was further tested in dedicated beam tests at CERN. There, the new Skiroc2-CMS front-end ASIC was used for the first time. We highlight final results from our studies in 2016, including ...

  13. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

    CERN Document Server

    INSPIRE-00407830; Bloch, Ingo; Edwards, Sam; Friedrich, Conrad; Gregor, Ingrid M.; Jones, T; Lacker, Heiko; Pyatt, Simon; Rehnisch, Laura; Sperlich, Dennis; Wilson, John

    2016-05-24

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigatio...

  14. Construction and beam-tests of silicon-tungsten prototype modules for the CMS High Granularity Calorimeter for HL-LHC

    CERN Document Server

    Quast, Thorben

    2017-01-01

    As part of its HL-LHC upgrade program, CMS is developing a High Granularity Calorimeter (HGCAL) to replace the existing endcap calorimeters. The HGCAL will be realised as a sampling calorimeter, including an electromagnetic compartment comprising 28 layers of silicon pad detectors with pad areas of 0.5 - 1.0 cm$^2$ interspersed with absorbers.Prototype modules, based on 6-inch hexagonal silicon pad sensors with 128 channels, have been constructed and include many of the features required for this challenging detector. In 2016, beam tests of sampling configurations made from these modules have been conducted both at FNAL and at CERN using the Skiroc2 front-end chip (designed for the CALICE experiment for ILC). This year, the setup is extended with CALICE's AHCAL prototype and it is further tested in dedicated beam tests at CERN. There, the new Skiroc2-CMS front-end chip is used for the first time.We present final results from our studies in 2016, including noise performance, calibration with MIPs, energy and p...

  15. Construction and beam-tests of silicon-tungsten prototype modules for the CMS High Granularity Calorimeter for HL-LHC

    Science.gov (United States)

    Quast, Thorben

    2018-02-01

    As part of its HL-LHC upgrade program, CMS is developing a High Granularity Calorimeter (HGCAL) to replace the existing endcap calorimeters. The HGCAL will be realised as a sampling calorimeter, including an electromagnetic compartment comprising 28 layers of silicon pad detectors with pad areas of 0.5-1.0 cm2 interspersed with absorbers. Prototype modules, based on 6-inch hexagonal silicon pad sensors with 128 channels, have been constructed and include many of the features required for this challenging detector. In 2016, beam tests of sampling configurations made from these modules have been conducted both at FNAL and at CERN using the Skiroc2 front-end ASIC (designed by the CALICE collaboration for ILC). In 2017, the setup has been extended with CALICE's AHCAL prototype, a scinitillator based sampling calorimeter, and it was further tested in dedicated beam tests at CERN. There, the new Skiroc2-CMS front-end ASIC was used for the first time. We highlight final results from our studies in 2016, including position resolution as well as precision timing-measurements. Furthermore, the extended setup in 2017 is discussed and first results from beam tests with electrons and pions are shown.

  16. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  17. Fiber optic probe of free electron evanescent fields in the optical frequency range

    Energy Technology Data Exchange (ETDEWEB)

    So, Jin-Kyu, E-mail: js1m10@orc.soton.ac.uk; MacDonald, Kevin F. [Optoelectronics Research Centre and Centre for Photonic Metamaterials, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Zheludev, Nikolay I. [Optoelectronics Research Centre and Centre for Photonic Metamaterials, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371 (Singapore)

    2014-05-19

    We introduce an optical fiber platform which can be used to interrogate proximity interactions between free-electron evanescent fields and photonic nanostructures at optical frequencies in a manner similar to that in which optical evanescent fields are sampled using nanoscale aperture probes in scanning near-field microscopy. Conically profiled optical fiber tips functionalized with nano-gratings are employed to couple electron evanescent fields to light via the Smith-Purcell effect. We demonstrate the interrogation of medium energy (30–50 keV) electron fields with a lateral resolution of a few micrometers via the generation and detection of visible/UV radiation in the 700–300 nm (free-space) wavelength range.

  18. Evanescent Wave Absorption Based Fiber Sensor for Measuring Glucose Solution Concentration

    Science.gov (United States)

    Marzuki, Ahmad; Candra Pratiwi, Arni; Suryanti, Venty

    2018-03-01

    An optical fiber sensor based on evanescent wave absorption designed for measuring glucose solution consentration was proposed. The sensor was made to detect absorbance of various wavelength in the glucose solution. The sensing element was fabricated by side polishing of multimode polymer optical fiber to form a D-shape. The sensing element was immersed in different concentration of glucoce solution. As light propagated through the optical fiber, the evanescent wave interacted with the glucose solution. Light was absorbed by the glucose solution. The larger concentration the glucose solution has, the more the evanescent wave was absorbed in particular wavelenght. Here in this paper, light absorbtion as function of glucose concentration was measured as function of wavelength (the color of LED). We have shown that the proposed sensor can demonstrated an increase of light absorption as function of glucose concentration.

  19. Yb:KYW planar waveguide laser Q-switched by evanescent-field interaction with carbon nanotubes

    NARCIS (Netherlands)

    Kim, Jun Wan; Choi, Sun Young; Yeom, Dong-Il; Aravazhi, S.; Pollnau, Markus; Griebner, Uwe; Petrov, Valentin; Rotermund, Fabian

    2013-01-01

    We report Q-switched operation of a planar waveguide laser by evanescent-field interaction with single-walled carbon nanotubes deposited on top of the waveguide. The saturable-absorber-integrated gain medium, which operates based on evanescent-field interaction, enables the realization of a

  20. Evanescent-wave cavity ring-down spectroscopy for enhanced detection of surface binding under flow injection analysis conditions

    NARCIS (Netherlands)

    Van Der Sneppen, L.; Ariese, F.; Gooijer, C.; Ubachs, W.

    2008-01-01

    In evanescent-wave cavity ring-down spectroscopy, one (or more) of the re°ections inside the cavity is a total internal re°ection (TIR) event. Only the evanescent wave associated with this TIR is being used for prob-ing the sample. This technique is therefore highly surface-speci-c and attractive

  1. Energy modulation of nonrelativistic electrons in an optical near field on a metal microslit

    OpenAIRE

    R., Ishikawa; Jongsuck, Bae; K., Mizuno

    2001-01-01

    Energy modulation of nonrelativistic electrons with a laser beam using a metal microslit as an interaction circuit has been investigated. An optical near field is induced in the proximity of the microslit by illumination of the laser beam. The electrons passing close to the slit are accelerated or decelerated by an evanescent wave contained in the near field whose phase velocity is equal to the velocity of the electrons. The electron-evanescent wave interaction in the microslit has been analy...

  2. Investigation and optimization of series connection of thin-film silicon solar modules; Untersuchung und Optimierung der Serienverschaltung von Silizium-Duennschicht-Solarmodulen

    Energy Technology Data Exchange (ETDEWEB)

    Haas, Stefan

    2010-07-01

    The integrated series connection is an important and elementary part of a thin-film silicon solar module. The series connection leads to a reduction of Ohmic losses and an increase of the module voltage. After their deposition the different functional layers of a solar module must be patterned selectively to form a series connection. First the front contact, then the absorber, and finally the back contact is locally removed. The first step and the last step are needed to separate the contact layers (isolation step), the absorber patterning is used to expose the front contact and prepare the series interconnection. Usually laser ablation is used for patterning. The patterning of the front contact is overall a noncritical step. Therefore, this thesis exclusively investigates mechanisms that limit the process window of the absorber patterning and the back contact patterning. Especially for the absorber patterning on SnO{sub 2}-substrates the process window is very narrow. As too high pulse energies create a barrier layer on the SnO{sub 2}-window layer, which restricts the current flow in a series connected module. This barrier layer probably consists of SiO{sub 2} or an alloy of (Sn,Si)O{sub 2}. It arrises from redeposition of evaporated silicon. Ablation of the absorber without creating a barrier layer is only possible, when the silicon is not evaporated. Here the ablation is induced by the explosive out-diffusion of hydrogen from the silicon layer. On ZnO-substrates no significant barrier formation occurs. For this reason the process window is very broad. Patterning the back contact is the last isolation step. It is mainly restricted by an unavoidable deterioration of the absorber as well as a possible ablation of the window layer. The deterioration of the absorber in the vicinity of the patterning groove leads to parasitic dark currents for amorphous and for microcrystalline solar cells. The parasitic dark currents decrease the efficiency {eta} of a patterned

  3. Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

    Science.gov (United States)

    1981-01-01

    Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

  4. Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

    Science.gov (United States)

    1983-01-01

    Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

  5. High-Performance and Omnidirectional Thin-Film Amorphous Silicon Solar Cell Modules Achieved by 3D Geometry Design.

    Science.gov (United States)

    Yu, Dongliang; Yin, Min; Lu, Linfeng; Zhang, Hanzhong; Chen, Xiaoyuan; Zhu, Xufei; Che, Jianfei; Li, Dongdong

    2015-11-01

    High-performance thin-film hydrogenated amorphous silicon solar cells are achieved by combining macroscale 3D tubular substrates and nanoscaled 3D cone-like antireflective films. The tubular geometry delivers a series of advantages for large-scale deployment of photovoltaics, such as omnidirectional performance, easier encapsulation, decreased wind resistance, and easy integration with a second device inside the glass tube. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Time-resolved single-photon detection module based on silicon photomultiplier: A novel building block for time-correlated measurement systems

    Energy Technology Data Exchange (ETDEWEB)

    Martinenghi, E., E-mail: edoardo.martinenghi@polimi.it; Di Sieno, L.; Contini, D.; Dalla Mora, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Sanzaro, M. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2016-07-15

    We present the design and preliminary characterization of the first detection module based on Silicon Photomultiplier (SiPM) tailored for single-photon timing applications. The aim of this work is to demonstrate, thanks to the design of a suitable module, the possibility to easily exploit SiPM in many applications as an interesting detector featuring large active area, similarly to photomultipliers tubes, but keeping the advantages of solid state detectors (high quantum efficiency, low cost, compactness, robustness, low bias voltage, and insensitiveness to magnetic field). The module integrates a cooled SiPM with a total photosensitive area of 1 mm{sup 2} together with the suitable avalanche signal read-out circuit, the signal conditioning, the biasing electronics, and a Peltier cooler driver for thermal stabilization. It is able to extract the single-photon timing information with resolution better than 100 ps full-width at half maximum. We verified the effective stabilization in response to external thermal perturbations, thus proving the complete insensitivity of the module to environment temperature variations, which represents a fundamental parameter to profitably use the instrument for real-field applications. We also characterized the single-photon timing resolution, the background noise due to both primary dark count generation and afterpulsing, the single-photon detection efficiency, and the instrument response function shape. The proposed module can become a reliable and cost-effective building block for time-correlated single-photon counting instruments in applications requiring high collection capability of isotropic light and detection efficiency (e.g., fluorescence decay measurements or time-domain diffuse optics systems).

  7. Time-resolved single-photon detection module based on silicon photomultiplier: A novel building block for time-correlated measurement systems

    International Nuclear Information System (INIS)

    Martinenghi, E.; Di Sieno, L.; Contini, D.; Dalla Mora, A.; Sanzaro, M.; Pifferi, A.

    2016-01-01

    We present the design and preliminary characterization of the first detection module based on Silicon Photomultiplier (SiPM) tailored for single-photon timing applications. The aim of this work is to demonstrate, thanks to the design of a suitable module, the possibility to easily exploit SiPM in many applications as an interesting detector featuring large active area, similarly to photomultipliers tubes, but keeping the advantages of solid state detectors (high quantum efficiency, low cost, compactness, robustness, low bias voltage, and insensitiveness to magnetic field). The module integrates a cooled SiPM with a total photosensitive area of 1 mm"2 together with the suitable avalanche signal read-out circuit, the signal conditioning, the biasing electronics, and a Peltier cooler driver for thermal stabilization. It is able to extract the single-photon timing information with resolution better than 100 ps full-width at half maximum. We verified the effective stabilization in response to external thermal perturbations, thus proving the complete insensitivity of the module to environment temperature variations, which represents a fundamental parameter to profitably use the instrument for real-field applications. We also characterized the single-photon timing resolution, the background noise due to both primary dark count generation and afterpulsing, the single-photon detection efficiency, and the instrument response function shape. The proposed module can become a reliable and cost-effective building block for time-correlated single-photon counting instruments in applications requiring high collection capability of isotropic light and detection efficiency (e.g., fluorescence decay measurements or time-domain diffuse optics systems).

  8. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2016-01-01

    This article proposes a fault identification method, based on the complementary analysis of the light and dark current-voltage (I-V) characteristics of the photovoltaic (PV) module, to distinguish between four important degradation modes that lead to power loss in PV modules: (a) degradation of t...

  9. Research on stable, high-efficiency, amorphous silicon multijunction modules. Annual subcontract report, 1 May 1991--30 April 1992

    Energy Technology Data Exchange (ETDEWEB)

    Catalano, A.; Bennett, M.; Chen, L.; D`Aiello, R.; Fieselmann, B.; Li, Y.; Newton, J.; Podlesny, R.; Yang, L. [Solarex Corp., Newtown, PA (United States). Thin Film Div.

    1992-08-01

    This report describes work to demonstrate a multijunction module with a ``stabilized`` efficiency (600 h, 50{degrees}C, AM1.5) of 10.5%. Triple-junction devices and modules using a-Si:H alloys with carbon and germanium were developed to meet program goals. ZnO was used to provide a high optical transmission front contact. Proof of concept was obtained for several important advances deemed to be important for obtaining high (12.5%) stabilized efficiency. They were (1) stable, high-quality a-SiC:H devices and (2) high-transmission, textured ZnO. Although these developments were not scaled up and included in modules, triple-junction module efficiencies as high as 10.85% were demonstrated. NREL measured 9.62% and 9.00% indoors and outdoors, respectively. The modules are expected to lose no more than 20% of their initial performance. 28 refs.

  10. Real-Time 200 Gb/s (4x56.25 Gb/s) PAM-4 Transmission over 80 km SSMF using Quantum-Dot Laser and Silicon Ring-Modulator

    DEFF Research Database (Denmark)

    Eiselt, Nicklas; Griesser, Helmut; Eiselt, Michael

    2017-01-01

    We report real-time 4x56.26-Gb/s DWDM PAM-4 transmission over 80-km SSMF with novel optical transmitter sub-assembly comprising multi-wavelength quantum-dot laser and silicon ring modulators. Pre-FEC BERs below 1E-4 are achieved after 80-km, allowing error-free operation with HD-FEC...

  11. Evanescent magnetic field effects on entropy generation at the onset ...

    Indian Academy of Sciences (India)

    This paper numerically investigates the effect of an externally evanescent magnetic field on total entropy generation in a fluid enclosed in a square cavity by using a control volume finite element method to solve the conservation equations at Prandtl number of 0·71. The values of relaxation time of the magnetic field are ...

  12. Evanescent Effects Can Alter Ultraviolet Divergences in Quantum Gravity without Physical Consequences

    CERN Document Server

    Bern, Zvi; Chi, Huan-Hang; Davies, Scott; Dixon, Lance; Nohle, Josh

    2015-01-01

    Evanescent operators such as the Gauss-Bonnet term have vanishing perturbative matrix elements in exactly D=4 dimensions. Similarly, evanescent fields do not propagate in D=4; a three-form field is in this class, since it is dual to a cosmological-constant contribution. In this Letter, we show that evanescent operators and fields modify the leading ultraviolet divergence in pure gravity. To analyze the divergence, we compute the two-loop identical-helicity four-graviton amplitude and determine the coefficient of the associated (non-evanescent) R^3 counterterm studied long ago by Goroff and Sagnotti. We compare two pairs of theories that are dual in D=4: gravity coupled to nothing or to three-form matter, and gravity coupled to zero-form or to two-form matter. Duff and van Nieuwenhuizen showed that, curiously, the one-loop conformal anomaly --- the coefficient of the Gauss-Bonnet operator --- changes under p-form duality transformations. We concur, and also find that the leading R^3 divergence changes under du...

  13. Near-field imaging of interference pattern of counterpropagating evanescent waves

    DEFF Research Database (Denmark)

    Bozhevolnyi, Sergey I.; Bozhevolnaya, Elena A.

    1999-01-01

    It is generally accepted that measurement of of the contrast of the intensity interference pattern formed by two counterpropagating evanescent waves can be used to characterize the resolving power of a collection near-field microscope. We argue that, if the light collected by a fiber probe propag...... be equal to the contrast of the interference pattern....

  14. Polymer slab waveguides for the optical detection of nanoparticles in evanescent field based biosensors

    NARCIS (Netherlands)

    Teigell Beneitez, N.; Missinne, J.; Schleipen, J.J.H.B.; Orsel, J.G.; Prins, M.W.J.; Steenberge, Van G.; Cartwright, A.N.; Nicolau, D.V.

    2010-01-01

    We present a polymer optical waveguide integration technology for the detection of nanoparticles in an evanescent field based biosensor. In the proposed biosensor concept, super-paramagnetic nanoparticles are used as optical contrast labels. The nanoparticles capture target molecules from a sample

  15. Structure fits the purpose: photonic crystal fibers for evanescent-field surface-enhanced Raman spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Oo, M. K .K.; Han, Y.; Kaňka, Jiří; Sukhishvili, S.; Du, H.

    2010-01-01

    Roč. 35, č. 4 (2010), s. 466-468 ISSN 0146-9592 R&D Projects: GA ČR GA102/08/1719 Institutional research plan: CEZ:AV0Z20670512 Keywords : Photonic crystal fiber * Raman spectroscopy * Fiber-optic evanescent sensor Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 3.316, year: 2010

  16. High resolution imaging of dielectric surfaces with an evanescent field optical microscope

    NARCIS (Netherlands)

    van Hulst, N.F.; Segerink, Franciscus B.; Bölger, B.

    1992-01-01

    An evanescent field optical microscope (EFOM) is presented which employs frustrated total internal reflection o­n a localized scale by scanning a dielectric tip in close proximity to a sample surface. High resolution images of dielectric gratings and spheres containing both topographic and

  17. Photonic crystal fiber based evanescent-wave sensor for detection of biomolecules in aqueous solutions

    DEFF Research Database (Denmark)

    Jensen, Jesper Bo Damm; Pedersen, Lars H.; Hoiby, Poul E.

    2004-01-01

    We demonstrate highly efficient evanescent-wave detection of fluorophore-labeled biomolecules in aqueous solutions positioned in the air holes of the microstructured part of a photonic crystal fiber. The air-suspended silica structures located between three neighboring air holes in the cladding c...

  18. Surface delivery of a single nanoparticle under moving evanescent standing-wave illumination

    Czech Academy of Sciences Publication Activity Database

    Šiler, Martin; Čižmár, Tomáš; Jonáš, Alexandr; Zemánek, Pavel

    2008-01-01

    Roč. 10, č. 11 (2008), 113010: 1-16 ISSN 1367-2630 R&D Projects: GA MŠk(CZ) LC06007; GA MŠk OC08034 Institutional research plan: CEZ:AV0Z20650511 Keywords : nanoparticle * evanescent field * standing-wave illumination * surface delivery Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.440, year: 2008

  19. A miniaturized oxygen sensor integrated on fiber surface based on evanescent-wave induced fluorescence quenching

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, Yan [School of Chemistry and Chemical Engineering, Southwest Petroleum University, Chengdu 610500 (China); Oil and Gas Field Applied Chemistry Key Laboratory of Sichuan Province, Southwest Petroleum University, Chengdu, 610500 (China); Tan, Jun; Wang, Chengjie; Zhu, Ying [School of Chemistry and Chemical Engineering, Southwest Petroleum University, Chengdu 610500 (China); Fang, Shenwen [School of Chemistry and Chemical Engineering, Southwest Petroleum University, Chengdu 610500 (China); Oil and Gas Field Applied Chemistry Key Laboratory of Sichuan Province, Southwest Petroleum University, Chengdu, 610500 (China); Wu, Jiayi; Wang, Qing [School of Chemistry and Chemical Engineering, Southwest Petroleum University, Chengdu 610500 (China); Duan, Ming, E-mail: swpua124@126.com [State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation, Southwest Petroleum University, Chengdu 610500 (China); School of Chemistry and Chemical Engineering, Southwest Petroleum University, Chengdu 610500 (China); Oil and Gas Field Applied Chemistry Key Laboratory of Sichuan Province, Southwest Petroleum University, Chengdu, 610500 (China)

    2016-11-15

    In this work, a miniaturized sensor was integrated on fiber surface and developed for oxygen determination through evanescent-wave induced fluorescence quenching. The sensor was designed by using light emitting diode (LED) as light source and optical fiber as light transmission element. Tris(2,2′-bipyridyl) ruthenium ([Ru(bpy){sub 3}]{sup 2+}) fluorophore was immobilized in the organically modified silicates (ORMOSILs) film and coated onto the fiber surface. When light propagated by total internal reflection (TIR) in the fiber core, evanescent wave could be produced on the fiber surface and excite [Ru(bpy){sub 3}]{sup 2+} fluorophore to produce fluorescence emission. Then oxygen could be determinated by its quenching effect on the fluorescence and its concentration could be evaluated according to Stern–Volumer model. Through integrating evanescent wave excitation and fluorescence quenching on fiber surface, the sensor was successfully miniaturized and exhibit improved performances of high sensitivity (1.4), excellent repeatability (1.2%) and fast analysis (12 s) for oxygen determination. The sensor provided a newly portable method for in-situ and real-time measurement of oxygen and showed potential for practical oxygen analysis in different application fields. Furthermore, the fabrication of this sensor provides a miniaturized and portable detection platform for species monitoring by simple modular design. - Highlights: • ORMOSILs sensing film immobilized with [Ru(bpy){sub 3}]{sup 2+} fluorophore was coated on fiber surface. • Evanescent wave on the fiber surface was utilized as excitation source to produce fluorescence. • Oxygen was measured based on its quenching effect on evanescent wave-induce fluorescence. • Sensor fabrication was miniaturized by integrating detection and sensing elements on the fiber. • The modular design sensor provides a detection platform for other species monitoring.

  20. Migration of Sn and Pb from Solder Ribbon onto Ag Fingers in Field-Aged Silicon Photovoltaic Modules

    Directory of Open Access Journals (Sweden)

    Wonwook Oh

    2015-01-01

    Full Text Available We investigated the migration of Sn and Pb onto the Ag fingers of crystalline Si solar cells in photovoltaic modules aged in field for 6 years. Layers of Sn and Pb were found on the Ag fingers down to the edge of the solar cells. This phenomenon is not observed in a standard acceleration test condition for PV modules. In contrast to the acceleration test conditions, field aging subjects the PV modules to solar irradiation and moisture condensation at the interface between the solar cells and the encapsulant. The solder ribbon releases Sn and Pb via repeated galvanic corrosion and the Sn and Pb precipitate on Ag fingers due to the light-induced plating under solar irradiation.

  1. Optical trapping of cold neutral atoms using a two-color evanescent light field around a carbon nanotube

    International Nuclear Information System (INIS)

    Nga, Do Thi; Viet, Nguyen Ai; Nga, Dao Thi Thuy; Lan, Nguyen Thi Phuong

    2014-01-01

    We suggest a new schema of trapping cold atoms using a two-color evanescent light field around a carbon nanotube. The two light fields circularly polarized sending through a carbon nanotube generates an evanescent wave around this nanotube. By evanescent effect, the wave decays away from the nanotube producing a set of trapping minima of the total potential in the transverse plane as a ring around the nanotube. This schema allows capture of atoms to a cylindrical shell around the nanotube. We consider some possible boundary conditions leading to the non-trivial bound state solution. Our result will be compared to some recent trapping models and our previous trapping models.

  2. Laser tests of silicon detectors

    International Nuclear Information System (INIS)

    Dolezal, Zdenek; Escobar, Carlos; Gadomski, Szymon; Garcia, Carmen; Gonzalez, Sergio; Kodys, Peter; Kubik, Petr; Lacasta, Carlos; Marti, Salvador; Mitsou, Vasiliki A.; Moorhead, Gareth F.; Phillips, Peter W.; Reznicek, Pavel; Slavik, Radan

    2007-01-01

    This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented

  3. LHCb-VELO module production with n-side read-out on n- and p-type silicon substrates

    International Nuclear Information System (INIS)

    Affolder, A.; Bowcock, T.J.V.; Carrol, J.L.; Casse, G.; Huse, T.; Patel, G.D.; Rinnert, K.; Smith, N.A.; Turner, P.R.

    2007-01-01

    The modules for the Vertex Locator detector of the LHCb experiment represent a technical challenge for their complexity. The design of the sensors uses a complex double metal routing of the connection to the read-out strips and a high density of metal lines has to be accommodated in the module. The detectors are n-side read-out to be able to survive the highest radiation damage of any micro-strip sensor used in LHC experiments. The present choice is n-strips on n-type substrates (n-in-n geometry). Double-sided lithography is required, which impact on the cost of the devices and on the module construction. Moreover, the compact size of the hybrid imposes sophisticated technical solutions for cooling the electronics and the detector. The module construction and the possible benefits offered by the choice of p-type substrate detectors compared to the present n-in-n devices are here discussed in details

  4. Multi-step surface functionalization of polyimide based evanescent wave photonic biosensors and application for DNA hybridization by Mach-Zehnder interferometer

    Energy Technology Data Exchange (ETDEWEB)

    Melnik, Eva [Health and Environment Department, Nano Systems, AIT Austrian Institute of Technology GmbH, Donau-City-Strasse 1, 1220 Vienna (Austria); Department of Analytical Chemistry, University of Vienna, Waehringer Strasse 38, 1090 Vienna (Austria); Bruck, Roman [Health and Environment Department, Nano Systems, AIT Austrian Institute of Technology GmbH, Donau-City-Strasse 1, 1220 Vienna (Austria); Hainberger, Rainer, E-mail: rainer.hainberger@ait.ac.at [Health and Environment Department, Nano Systems, AIT Austrian Institute of Technology GmbH, Donau-City-Strasse 1, 1220 Vienna (Austria); Laemmerhofer, Michael, E-mail: michael.laemmerhofer@univie.ac.at [Department of Analytical Chemistry, University of Vienna, Waehringer Strasse 38, 1090 Vienna (Austria)

    2011-08-12

    Highlights: {yields} We realize a biosensing platform for polyimide evanescent photonic wave sensors. {yields} We show that the surface functionalization via silanisation and biotinylation followed by streptavidin immobilization do not destroy or damage the thin polyimide film. {yields} A highly dense streptavidin layer enables the immobilisation of biotinylated ligands such as biotinylated ssDNA for the selective measurement of DNA hybridization. - Abstract: The process of surface functionalization involving silanization, biotinylation and streptavidin bonding as platform for biospecific ligand immobilization was optimized for thin film polyimide spin-coated silicon wafers, of which the polyimide film serves as a wave guiding layer in evanescent wave photonic biosensors. This type of optical sensors make great demands on the materials involved as well as on the layer properties, such as the optical quality, the layer thickness and the surface roughness. In this work we realized the binding of a 3-mercaptopropyl trimethoxysilane on an oxygen plasma activated polyimide surface followed by subsequent derivatization of the reactive thiol groups with maleimide-PEG{sub 2}-biotin and immobilization of streptavidin. The progress of the functionalization was monitored by using different fluorescence labels for optimization of the chemical derivatization steps. Further, X-ray photoelectron spectroscopy and atomic force microscopy were utilized for the characterization of the modified surface. These established analytical methods allowed to derive information like chemical composition of the surface, surface coverage with immobilized streptavidin, as well as parameters of the surface roughness. The proposed functionalization protocol furnished a surface density of 144 fmol mm{sup -2} streptavidin with good reproducibility (13.9% RSD, n = 10) and without inflicted damage to the surface. This surface modification was applied to polyimide based Mach-Zehnder interferometer

  5. Development and optimization of processes for producing highly efficient large-area PV modules based on amorphous silicon. Final report; Entwicklung und Optimierung von Prozessen zur Fertigung hocheffizienter grossflaechiger a-Si-PV-Module. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Maurus, H.; Ruebel, H.; Frammelsberger, W.; Geyer, R.; Lechner, P.; Psyk, W.; Schade, H.

    2001-07-31

    This report contains fundamental topics on further developing the PV technology based on amorphous silicon (a-Si), namely upscaling of laboratory processes to production size areas, improvement of patterning processes to minimize area losses due to monolithic series connection of cells, speeding up individual process steps while maintaining their reproducibility, long-term stability of encapsulated modules. Among the superstrate technologies of the competitors, the module efficiency has reached an international standard. The throughput of the pilot production line has been substantially increased by improving the process cycle times and the equipment uptime. (orig.) [German] Der vorliegende Bericht beinhaltet grundlegende Arbeiten zur Weiterentwicklung der a-Si PV-Technologie. Er behandelt die Themen: Aufskalierung von kleinflaechiger Laborabscheidetechnologie auf groessere industrierelevante Flaechen, Verbesserung und Optimierung von Strukturierungsverfahren fuer hohe Flaechenausnutzung, Beschleunigung und Reproduzierbarkeit der Einzelprozesse sowie Langzeitstabilitaet von verkapselten Modulen. Der Modulwirkungsgrad hat - verglichen mit gleichartiger Technologie von Wettbewerbern - internationalen Standard erreicht. Der Durchsatz der Pilotfertigungsanlage konnte aufgrund der Verbesserung der wirtschaftlichen Kenngroessen Anlagenverfuegbarkeit und Taktzeit wesentlich erhoeht werden. (orig.)

  6. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  7. Strong and reversible modulation of carbon nanotube-silicon heterojunction solar cells by an interfacial oxide layer.

    Science.gov (United States)

    Jia, Yi; Cao, Anyuan; Kang, Feiyu; Li, Peixu; Gui, Xuchun; Zhang, Luhui; Shi, Enzheng; Wei, Jinquan; Wang, Kunlin; Zhu, Hongwei; Wu, Dehai

    2012-06-21

    Deposition of nanostructures such as carbon nanotubes on Si wafers to make heterojunction structures is a promising route toward high efficiency solar cells with reduced cost. Here, we show a significant enhancement in the cell characteristics and power conversion efficiency by growing a silicon oxide layer at the interface between the nanotube film and Si substrate. The cell efficiency increases steadily from 0.5% without interfacial oxide to 8.8% with an optimal oxide thickness of about 1 nm. This systematic study reveals that formation of an oxide layer switches charge transport from thermionic emission to a mixture of thermionic emission and tunneling and improves overall diode properties, which are critical factors for tailoring the cell behavior. By controlled formation and removal of interfacial oxide, we demonstrate oscillation of the cell parameters between two extreme states, where the cell efficiency can be reversibly altered by a factor of 500. Our results suggest that the oxide layer plays an important role in Si-based photovoltaics, and it might be utilized to tune the cell performance in various nanostructure-Si heterojunction structures.

  8. Investigating the sensitivity of PMMA optical fibres for use as an evanescent field absorption sensor in aqueous solutions

    International Nuclear Information System (INIS)

    Lye, P G; Boerkamp, M; Ernest, A; Lamb, D W

    2005-01-01

    Polymethylmethacrylate (PMMA) optical fibres are low-cost polymer fibres that are generally more physically robust than silica fibres, are more flexible, yet like silica fibres have the potential to be used for practical evanescent field absorption sensors in aqueous solutions. However, evanescent field absorption in aqueous solutions is influenced by more than just the specific absorptivity of the solution in question. The physical configuration of the optical fibre itself, as well as surface charge interactions between the fibre and the chromophore in the solution also significantly affects the sensitivity of the fibre to evanescent field absorption. This paper reports on an investigation of numerous physical phenomena that influence evanescent field absorption for PMMA fibres using an aqueous solution of the dye Amidoblack. Parameters investigated included fibre coiling configuration and bend radius, fibre interaction length, and effect of solution pH. Coiled fibres were found to be more sensitive to evanescent field absorption than straight (uncoiled) lengths, and sensitivity was found to increase with a further reduction in bend radius. At high solution pH, the absorption versus solution concentration proved to be linear whereas at low pH the absorption versus concentration relationship exhibited a clear deviation from linearity. The observed nonlinearity at low pH points to the importance of accounting for electrostatic interactions between chromophore and fibre surface when designing a PMMA sensor for evanescent field absorption measurements in aqueous solutions

  9. Holographic View of the Brain Memory Mechanism Based on Evanescent Superluminal Photons

    Directory of Open Access Journals (Sweden)

    Takaaki Musha

    2012-08-01

    Full Text Available D. Pollen and M. Trachtenberg proposed the holographic brain theory to help explain the existence of photographic memories in some people. They suggested that such individuals had more vivid memories because they somehow could access a very large region of their memory holograms. Hameroff suggested in his paper that cylindrical neuronal microtubule cavities, or centrioles, function as waveguides for the evanescent photons for quantum signal processing. The supposition is that microtubular structures of the brain function as a coherent fiber bundle set used to store holographic images, as would a fiber-optic holographic system. In this paper, the author proposes that superluminal photons propagating inside the microtubules via evanescent waves could provide the access needed to record or retrieve a quantum coherent entangled holographic memory.

  10. Compensating for evanescent modes and estimating characteristic impedance in waveguide acoustic impedance measurements

    DEFF Research Database (Denmark)

    Nørgaard, Kren Rahbek; Fernandez Grande, Efren

    2017-01-01

    The ear-canal acoustic impedance and reflectance are useful for assessing conductive hearing disorders and calibrating stimulus levels in situ. However, such probe-based measurements are affected by errors due to the presence of evanescent modes and incorrect estimates or assumptions regarding...... characteristic impedance. This paper proposes a method to compensate for evanescent modes in measurements of acoustic impedance, reflectance, and sound pressure in waveguides, as well as estimating the characteristic impedance immediately in front of the probe. This is achieved by adjusting the characteristic...... impedance and subtracting an acoustic inertance from the measured impedance such that the non-causality in the reflectance is minimized in the frequency domain using the Hilbert transform. The method is thus capable of estimating plane-wave quantities of the sought-for parameters by supplying only...

  11. Graphene based chalcogenide fiber-optic evanescent wave sensor for detection of hemoglobin in human blood

    Science.gov (United States)

    Sharma, Anuj K.; Gupta, Jyoti

    2018-03-01

    Fiber optic evanescent wave sensor with graphene as an absorption-enhancing layer to measure hemoglobin concentration in human blood is proposed. Previous modal functions and experimental results describing the variation of optical constants of human blood with different hemoglobin concentrations in the near-infrared spectral region are considered for sensor design simulation. The sensor's performance is closely analyzed in terms of its absorption coefficient, sensitivity, and detection limit. It is found that the proposed sensor should be operated at longer light wavelength to get more enhanced sensitivity and smaller detection limit. At 1000 nm wavelength, a detection limit of 18 μg/dL and sensitivity of 6.71 × 10-4 per g/dL is achievable with the proposed sensor. The sensitivity is found to be better for larger hemoglobin concentrations. The results are correlated with the evanescent wave penetration depth.

  12. Fano resonance of the ultrasensitve optical force excited by Gaussian evanescent field

    International Nuclear Information System (INIS)

    Yang, Yang; Li, Jiafang; Li, Zhi-Yuan

    2015-01-01

    In this paper, we study the angle-dependent Fano-like optical force spectra of plasmonic Ag nanoparticles, which exhibit extraordinary transformation from Lorentzian resonance to Fano resonance when excited by a Gaussian evanescent wave. We systematically analyze the behavior of this asymmetric scattering induced optical force under different conditions and find that this Fano interference-induced force is ultrasensitive to the excitation wavelength, incident angle and particle size, as well as the core–shell configuration, which could be useful for wavelength- and angle-dependent size-selective optical manipulation. The origin of this Fano resonance is further identified as the interference between the two adjacent-order multipolar plasmonic modes excited in the Ag particle under the excitation of an inhomogeneously distributed evanescent field. (paper)

  13. Mixed Non-Uniform Width / Evanescent Mode Ceramic Resonator Waveguide Filter With Wide Spurious Free Bandwidth

    OpenAIRE

    Afridi, S; Sandhu, M; Hunter, I

    2016-01-01

    This paper presents a method to improve the spurious performance of integrated ceramic waveguide filters. Nonuniform width ceramic waveguide resonator and evanescent mode ceramic resonators are employed together to the resonant frequencies of higher order modes. The proposed designs give 75% improvement in stop band response when compared to uniform width ceramic waveguide filter. Simulated results of two six pole chebyshev filters are presented here with improved stop band performance.

  14. Doppleron resonances in the diffraction of atoms by an evanescent field

    International Nuclear Information System (INIS)

    Murphy, J.E.; Hollenberg, L.C.L.; Smith, A.E.

    1994-01-01

    The diffracted intensities of sodium atoms by a standing evanescent light wave near the three doppleron resonance are calculated using a multi-slice technique. This calculation predicts a sharp dip in the reflected intensity of the specular beam for a detuning slightly below resonance. Such phenomena has been observed experimentally and can be understood using the dressed state picture. 4 refs., 2 tabs., 3 figs

  15. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

  16. Performance evaluation of a sub-millimeter spatial resolution PET detector module using a digital silicon photomultiplier coupled LGSO array

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Hyun Tae [Molecular Imaging Research & Education (MiRe) Laboratory, Department of Electronic Engineering, Sogang University, Seoul (Korea, Republic of); Choi, Yong, E-mail: ychoi@sogang.ac.kr [Molecular Imaging Research & Education (MiRe) Laboratory, Department of Electronic Engineering, Sogang University, Seoul (Korea, Republic of); Kim, Kyu Bom; Lee, Sangwon [Molecular Imaging Research & Education (MiRe) Laboratory, Department of Electronic Engineering, Sogang University, Seoul (Korea, Republic of); Yamamoto, Seiichi [Department of Medical Technology, Nagoya University Graduate School of Medicine, Nagoya (Japan); Yeom, Jung-Yeol, E-mail: jungyeol@korea.ac.kr [School of Biomedical Engineering, Korea University, Seoul (Korea, Republic of)

    2017-02-21

    In positron emission tomography (PET) for breast, brain and small animal imaging, the spatial resolution of a PET detector is crucial to obtain high quality PET images. In this study, a PET detector for sub-millimeter spatial resolution imaging purpose was assembled using 4×4 pixels of a digital silicon photomultiplier (dSiPM, DPC-3200-22-44, Philips) coupled with a 15×15 LGSO array with BaSO{sub 4} reflector, and a 1 mm thick acrylic light guide for light distribution between the dSiPM pixels. The active area of each dSiPM pixel was 3.2×3.9 mm{sup 2} and the size of each LGSO scintillator element was 0.7×0.7×6 mm{sup 3}. In this paper, we experimentally demonstrated the performance of the PET detector by measuring the energy resolution, 2D flood map, peak to valley (P/V) ratio, and coincidence resolving time (CRT). All measurements were performed at a temperature of 10±1 ℃. The average energy resolution was 15.6% (without correcting for saturation effects) at 511 keV and the best CRT was 242±5 ps. The 2D flood map obtained with an energy window of 400–600 keV demonstrated clear identification of all pixels, and the average P/V ratio of the X- and Y-directions were 7.31 and 7.81, respectively. This study demonstrated that the PET detector could be suitable for application in high resolution PET while achieving good timing resolution.

  17. Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Annual subcontract report, 1 January 1996--31 December 1996

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J. [Solarex Corp., Frederick, MD (United States)

    1997-10-01

    This report describes Solarex`s accomplishments during this phase of the Photovoltaic Manufacturing Technology (PVMaT) program. During this reporting period, Solarex researchers converted 79% of production casting stations to increase ingot size and operated them at equivalent yields and cell efficiencies; doubled the casting capacity at 20% the cost of buying new equipment to achieve the same capacity increase; operated the wire saws in a production mode with higher yields and lower costs than achieved on the ID saws; purchased additional wire saws; developed and qualified a new wire-guide coating material that doubles the wire-guide lifetime and produces significantly less scatter in wafer thickness; ran an Al paste back-surface-field process on 25% of all cells in manufacturing; completed environmental qualification of modules using cells produced by an all-print metallization process; qualified a vendor-supplied Tedlar/ethylene vinyl acetate (EVA) laminate to replace the combination of separate sheets of EVA and Tedlar backsheet; substituted RTV adhesive for the 3M Very High Bond tape after several field problems with the tape; demonstrated the operation of a prototype unit to trim/lead attach/test modules; demonstrated the use of light soldering for solar cells; demonstrated the operation of a wafer pull-down system for cassetting wet wafers; and presented three PVMaT-related papers at the 25th IEEE Photovoltaic Specialists Conference.

  18. Evanescent Effects can Alter Ultraviolet Divergences in Quantum Gravity without Physical Consequences.

    Science.gov (United States)

    Bern, Zvi; Cheung, Clifford; Chi, Huan-Hang; Davies, Scott; Dixon, Lance; Nohle, Josh

    2015-11-20

    Evanescent operators such as the Gauss-Bonnet term have vanishing perturbative matrix elements in exactly D=4 dimensions. Similarly, evanescent fields do not propagate in D=4; a three-form field is in this class, since it is dual to a cosmological-constant contribution. In this Letter, we show that evanescent operators and fields modify the leading ultraviolet divergence in pure gravity. To analyze the divergence, we compute the two-loop identical-helicity four-graviton amplitude and determine the coefficient of the associated (nonevanescent) R^{3} counterterm studied long ago by Goroff and Sagnotti. We compare two pairs of theories that are dual in D=4: gravity coupled to nothing or to three-form matter, and gravity coupled to zero-form or to two-form matter. Duff and van Nieuwenhuizen showed that, curiously, the one-loop trace anomaly-the coefficient of the Gauss-Bonnet operator-changes under p-form duality transformations. We concur and also find that the leading R^{3} divergence changes under duality transformations. Nevertheless, in both cases, the physical renormalized two-loop identical-helicity four-graviton amplitude can be chosen to respect duality. In particular, its renormalization-scale dependence is unaltered.

  19. Multi-sample immunoassay inside optical fiber capillary enabled by evanescent wave detection

    Directory of Open Access Journals (Sweden)

    Chun-Wei Wang

    2016-03-01

    Full Text Available A novel evanescent wave-based (EW microfluidic capillary fiber-optic biosensor (MCFOB has been developed using capillaries as a transducer embedded in a multichannel device to enhance the collection efficiency of the fluorescence signal. The capillary serves dual roles as a waveguide and a container, enabling more straightforward, consistent, and compact biosensor packaging compared to conventional optical fiber biosensors and microfluidic systems. In order to detect multiple samples in one device, the biosensor incorporates a polydimethysiloxane (PDMS multi-channel device, which also serves as cladding for the biosensor. In addition, this biosensor only consumes 10 μl of a sample and does not require hydrofluoric acid etching in the fabrication process. The orientation for signal collection is optimized by comparing the lateral and normal signal directions for detected glyceraldehyde 3-phosphate dehydrogenase (GAPDH. C-reactive protein (CRP is used to validate the MCFOB, and the limit of detection (LOD for CRP in the MCFOB is 1.94 ng/ml (74 pM. Moreover, the real-time measurement is demonstrated to verify that the evanescent wave is the only exciting light source in the MCFOB, which gives the potential for real-time measurement applications. Keywords: C-reactive protein, Capillary, Fiber-optic, Microfluidic, Evanescent wave, Immunoassay

  20. Evanescent wave scattering at off-axis incidence on multiple cylinders located near a surface

    International Nuclear Information System (INIS)

    Lee, Siu-Chun

    2015-01-01

    The scattering characteristics of an infinite cylinder are strongly influenced by the incidence angle relative to its axis. If the incident wave propagates in the plane normal to the axis of the cylinder, the polarization of the scattered wave remains unchanged and the scattered wave propagates in the same plan as the incident wave. At off-axis incidence such that the incident direction makes an oblique angle with the cylinder axis, the scattered wave is depolarized, and its spatial distribution becomes three-dimensional. This paper presents the scattering solution for oblique incidence on multiple parallel cylinders located near a planar interface by an evanescent wave that is generated by total internal reflection of the source wave propagating in the higher refractive index substrate. Hertz potentials are utilized to formulate the interaction of inhomogeneous waves with the cylinders, scattering at the substrate interface, and near field scattering between the cylinders. Analytic formulas are derived for the electromagnetic fields and Poynting vector of scattered radiation in the near-field and their asymptotic forms in the far-field. Numerical examples are shown to illustrate scattering of evanescent wave by multiple cylinders at off-axis incidence. - Highlights: • Developed an exact solution for off-axis incidence on multiple cylinders. • Included depolarization, near-field scattering, and Fresnel effect in theory. • Derived analytic formulas for scattered radiation in the far field. • Illustrated evanescent scattering at off-axis incidence by numerical data

  1. Dosimetric verification of radiation therapy including intensity modulated treatments, using an amorphous-silicon electronic portal imaging device

    Science.gov (United States)

    Chytyk-Praznik, Krista Joy

    Radiation therapy is continuously increasing in complexity due to technological innovation in delivery techniques, necessitating thorough dosimetric verification. Comparing accurately predicted portal dose images to measured images obtained during patient treatment can determine if a particular treatment was delivered correctly. The goal of this thesis was to create a method to predict portal dose images that was versatile and accurate enough to use in a clinical setting. All measured images in this work were obtained with an amorphous silicon electronic portal imaging device (a-Si EPID), but the technique is applicable to any planar imager. A detailed, physics-motivated fluence model was developed to characterize fluence exiting the linear accelerator head. The model was further refined using results from Monte Carlo simulations and schematics of the linear accelerator. The fluence incident on the EPID was converted to a portal dose image through a superposition of Monte Carlo-generated, monoenergetic dose kernels specific to the a-Si EPID. Predictions of clinical IMRT fields with no patient present agreed with measured portal dose images within 3% and 3 mm. The dose kernels were applied ignoring the geometrically divergent nature of incident fluence on the EPID. A computational investigation into this parallel dose kernel assumption determined its validity under clinically relevant situations. Introducing a patient or phantom into the beam required the portal image prediction algorithm to account for patient scatter and attenuation. Primary fluence was calculated by attenuating raylines cast through the patient CT dataset, while scatter fluence was determined through the superposition of pre-calculated scatter fluence kernels. Total dose in the EPID was calculated by convolving the total predicted incident fluence with the EPID-specific dose kernels. The algorithm was tested on water slabs with square fields, agreeing with measurement within 3% and 3 mm. The

  2. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Narayanan, M.

    2006-07-01

    The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

  3. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 October 2003--30 September 2004

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Narayanan, M.

    2005-03-01

    The major objectives of this program are to continue the advancement of BP Solar polycrystalline silicon manufacturing technology. The program includes work in the following areas: Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations; developing wire saws to slice 100- m-thick silicon wafers on 290- m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100- m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology; facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

  4. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  5. Label-free evanescent microscopy for membrane nano-tomography in living cells.

    Science.gov (United States)

    Bon, Pierre; Barroca, Thomas; Lévèque-Fort, Sandrine; Fort, Emmanuel

    2014-11-01

    We show that through-the-objective evanescent microscopy (epi-EM) is a powerful technique to image membranes in living cells. Readily implementable on a standard inverted microscope, this technique enables full-field and real-time tracking of membrane processes without labeling and thus signal fading. In addition, we demonstrate that the membrane/interface distance can be retrieved with 10 nm precision using a multilayer Fresnel model. We apply this nano-axial tomography of living cell membranes to retrieve quantitative information on membrane invagination dynamics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  6. Evanescent-wave coupled right angled buried waveguide: Applications in carbon nanotube mode-locking

    International Nuclear Information System (INIS)

    Mary, R.; Thomson, R. R.; Kar, A. K.; Brown, G.; Beecher, S. J.; Popa, D.; Sun, Z.; Torrisi, F.; Hasan, T.; Milana, S.; Bonaccorso, F.; Ferrari, A. C.

    2013-01-01

    We present an evanescent-field device based on a right-angled waveguide. This consists of orthogonal waveguides, with their points of intersection lying along an angled facet of the chip. Light guided along one waveguide is incident at the angled dielectric-air facet at an angle exceeding the critical angle, so that the totally internally reflected light is coupled into the second waveguide. By depositing a nanotube film on the angled surface, the chip is then used to mode-lock an Erbium doped fiber ring laser with a repetition rate of 26 MHz, and pulse duration of 800 fs

  7. Gravity mode offset and properties of the evanescent zone in red-giant stars

    Science.gov (United States)

    Hekker, S.; Elsworth, Y.; Angelou, G. C.

    2018-03-01

    Context. The wealth of asteroseismic data for red-giant stars and the precision with which these data have been observed over the last decade calls for investigations to further understand the internal structures of these stars. Aim. The aim of this work is to validate a method to measure the underlying period spacing, coupling term, and mode offset of pure gravity modes that are present in the deep interiors of red-giant stars. We subsequently investigate the physical conditions of the evanescent zone between the gravity mode cavity and the pressure mode cavity. Methods: We implement an alternative mathematical description compared to what is used in the literature to analyse observational data and to extract the underlying physical parameters that determine the frequencies of mixed modes. This description takes the radial order of the modes explicitly into account, which reduces its sensitivity to aliases. Additionally, and for the first time, this method allows us to constrain the gravity mode offset ɛg for red-giant stars. Results: We find that this alternative mathematical description allows us to determine the period spacing ΔΠ and the coupling term q for the dipole modes within a few percent of values found in the literature. Additionally, we find that ɛg varies on a star-by-star basis and should not be kept fixed in the analysis. Furthermore, we find that the coupling factor is logarithmically related to the physical width of the evanescent region normalised by the radius at which the evanescent zone is located. Finally, the local density contrast at the edge of the core of red-giant branch models shows a tentative correlation with the offset ɛg. Conclusions: We are continuing to exploit the full potential of the mixed modes to investigate the internal structures of red-giant stars; in this case we focus on the evanescent zone. It remains, however, important to perform comparisons between observations and models with great care as the methods employed

  8. Influence of evanescent waves on the voxel profile in multipulse multiphoton polymerization nanofabrication

    International Nuclear Information System (INIS)

    Li Wei; Cao Tianxiang; Zhai Zhaohui; Yu Xuanyi; Zhang Xinzheng; Xu Jingjun

    2013-01-01

    The relationship between the profile of the structures obtained by multiphoton polymerization and the optical parameters of nanofabrication systems has been studied theoretically for a multipulse scheme. We find that the profile of sub-wavelength structures is greatly affected by the evanescent waves affect. Not only is the photocured polymer voxel affected by the beam profile, but the beam propagation behavior is influenced by the photocured polymer voxel. This gives us a new view of matter–light interactions in multipulse polymerization process, which is useful to the accurate control of the nanofabrication profile and the selection of new nanofabrication materials. (paper)

  9. Miniature Chemical Sensor Combining Molecular Recognition with Evanescent Wave Cavity Ring-Down Spectroscopy

    International Nuclear Information System (INIS)

    Pipino, Andrew C. R.; Meuse, Curtis W.

    2002-01-01

    To address the chemical sensing needs of DOE, a new class of chemical sensors is being developed that enables qualitative and quantitative, remote, real-time, optical diagnostics of chemical species in hazardous gas, liquid, and semi-solid phases by employing evanescent wave cavity ringdown spectroscopy (EW-CRDS). The sensitivity of EW-CRDS was demonstrated previously under Project No.60231. The objective of this project is to enhance the range of application and selectivity of the technique by combining EW-CRDS with refractive-index-sensitive nanoparticle optics, molecular recognition (MR) chemistry, and by utilizing the polarization-dependence of EW-CRDS. Research Progress and Implications

  10. Nonreciprocal optical tunnelling through evanescently coupled Tamm states in magnetophotonic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Yun-Tuan [Jiangsu Univ., Zhenjiang (China). School of Computer Science and Telecommunication Engineering; Han, Ling [The Second Military Medical Univ., Shanghai (China). Dept. of Radiation Medicine; Gao, Yong-Feng [Jiangsu Univ., Zhenjiang (China). School of Mechanical Engineering

    2015-07-01

    Evanescently coupled Tamm states are achieved through two magnetophotonic crystals (MPCs) with a pair of coupling prisms. At the wavelengths of coupled Tamm states, a double of nonreciprocal optical tunnelling channels is found through the transmission spectra obtained from a developed transfer matrix method. The nonreciprocal tunnelling wavelength and the interval between two nonreciprocal channels can be adjusted depending on the width of the air gap between two MPCs or the scale invariant of a PC. The nonreciprocal tunnelling is demonstrated through electromagnetic field distribution simulations based on finite element software. Such theoretical results may provide a new method to design tunable optical isolators with a double of channels.

  11. Quantitative measurement of piezoelectric coefficient of thin film using a scanning evanescent microwave microscope.

    Science.gov (United States)

    Zhao, Zhenli; Luo, Zhenlin; Liu, Chihui; Wu, Wenbin; Gao, Chen; Lu, Yalin

    2008-06-01

    This article describes a new approach to quantitatively measure the piezoelectric coefficients of thin films at the microscopic level using a scanning evanescent microwave microscope. This technique can resolve 10 pm deformation caused by the piezoelectric effect and has the advantages of high scanning speed, large scanning area, submicron spatial resolution, and a simultaneous accessibility to many other related properties. Results from the test measurements on the longitudinal piezoelectric coefficient of PZT thin film agree well with those from other techniques listed in literatures.

  12. Reflection and diffraction of atomic de Broglie waves by evanescent laser waves. Bare-state method

    International Nuclear Information System (INIS)

    Feng, Xiaoping; Witte, N.S.; Hollenberg, C.L.; Opat, G.

    1994-01-01

    Two methods are presented for the investigation of the reflection and diffraction of atoms by gratings formed either by standing or travelling evanescent laser waves. Both methods use the bare-state rather than dressed-state picture. One method is based on the Born series, whereas the other is based on the Laplace transformation of the coupled differential equations. The two methods yield the same theoretical expressions for the reflected and diffracted atomic waves in the whole space including the interaction and the asymptotic regions. 1 ref., 1 fig

  13. HLA typing in patients with multiple evanescent white dot syndrome (MEWDS).

    Science.gov (United States)

    Borruat, F X; Herbort, C P; Spertini, F; Desarnaulds, A B

    1998-03-01

    Multiple evanescent white dot syndrome (MEWDS) is an acquired chorioretinal disorder of unknown etiology. We investigated the possibility that MEWDS might be related to a specific HLA subtyping. Blood was obtained from nine patients affected by MEWDS. HLA-B51 was found in four of these nine patients with MEWDS. There was a 3.7-fold increased frequency of HLA-B51 in patients affected by MEWDS (relative risk 5.86). MEWDS might then be related to the presence of a specific HLA subtype, HLA-B51. However, due to the small sample size, our results need to be confirmed by further testing.

  14. Propagation of evanescent waves in multimode chalcogenide fiber immersed in an aqueous acetone solution: theory and experiment

    Science.gov (United States)

    Korsakova, S. V.; Romanova, E. A.; Velmuzhov, A. P.; Kotereva, T. V.; Sukhanov, M. V.; Shiryaev, V. S.

    2017-04-01

    Chalcogenide fibers are considered as a base for creation of a fiber-optical platform for the mid-IR evanescent wave spectroscopy. In this work, transmittance of a multimode fiber made of Ge26As17Se25Te32 glass, immersed into an aqueous acetone solution was measured in the range of wavelengths 5 - 9 microns at various concentrations of the solution. A theoretical approach based on electromagnetic theory of optical fibers has been applied for analysis of evanescent modes propagation in the fiber. Attenuation coefficients calculated for each HE1m evanescent mode increase with the mode radial order m. This effect can be used for optimisation of the fiber-optic sensing elements for the mid-IR spectroscopy.

  15. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 April 2002--30 September 2003 (Revised)

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Shea, S. P.

    2004-04-01

    The goal of BP Solar's Crystalline PVMaT program is to improve the present polycrystalline silicon manufacturing facility to reduce cost, improve efficiency, and increase production capacity. Key components of the program are: increasing ingot size; improving ingot material quality; improving material handling; developing wire saws to slice 100 ..mu..m thick silicon wafers on 200 ..mu..m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100 ..mu..m thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50 MW (annual nominal capacity) green-field Mega plant factory model template based on this new thin polycrystalline silicon technology; and facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

  16. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  17. Evanescent wave sensing and absorption analysis of herbal tea floral extracts in the presence of silver metal complexes

    Science.gov (United States)

    Priyamvada, V. C.; Radhakrishnan, P.

    2017-06-01

    Fiber optic evanescent wave sensors are used for studying the absorption properties of biochemical samples. The studies give precise information regarding the actual ingredients of the samples. Recent studies report the corrosion of silver in the presence glucose dissolved in water and heated to a temperature of 70°C. Based on this report evanescent absorption studies are carried out in hibiscus herbal tea floral extracts in the presence of silver metal complexes. These studies can also lead to the evaluation of the purity of the herbal tea extract.

  18. Zero-bias 32 Gb/s evanescently coupled InGaAs/InP UTC-PDs

    Science.gov (United States)

    Sun, Siwei; Liang, Song; Xie, Xiao; Xu, Junjie; Guo, Lu; Zhu, Hongliang; Wang, Wei

    2018-05-01

    We report the design and fabrication of high speed evanescently coupled InGaAs/InP uni-traveling-carrier-photodiodes (UTC-PDs). A self-aligned passive waveguide is integrated with the PDs by a simple fabrication procedure. Open eye diagrams at 32 Gb/s under zero bias are demonstrated for the first time, to the best of our knowledge, from evanescently or edge coupled InP based PDs, which are easier to be integrated with other optical components than surface illuminated PDs. When used for photonic integrated circuits (PICs) applications, our PDs help to lower the electrical cross talk and power consumption of PICs chips.

  19. Restoration of s-polarized evanescent waves and subwavelength imaging by a single dielectric slab

    International Nuclear Information System (INIS)

    El Gawhary, Omar; Schilder, Nick J; Costa Assafrao, Alberto da; Pereira, Silvania F; Paul Urbach, H

    2012-01-01

    It was predicted a few years ago that a medium with negative index of refraction would allow for perfect imaging. Although no material has been found so far that behaves as a perfect lens, some experiments confirmed the theoretical predictions in the near-field, or quasi-static, regime where the behaviour of a negative index medium can be mimicked by a thin layer of noble metal, such as silver. These results are normally attributed to the excitation of surface plasmons in the metal, which only leads to the restoration of p-polarized evanescent waves. In this work, we show that the restoration of s-polarized evanescent waves and, correspondingly, sub-wavelength imaging by a single dielectric slab are possible. Specifically, we show that at λ = 632 nm a thin layer of GaAs behaves as a superlens for s-polarized waves. Replacing the single-metal slab by a dielectric is not only convenient from a technical point of view, it being much easier to deposit and control the thickness and flatness of dielectric films than metal ones, but also invites us to re-think the connection between surface plasmon excitation and the theory of negative refraction. (paper)

  20. Bloch Modes and Evanescent Modes of Photonic Crystals: Weak Form Solutions Based on Accurate Interface Triangulation

    Directory of Open Access Journals (Sweden)

    Matthias Saba

    2015-01-01

    Full Text Available We propose a new approach to calculate the complex photonic band structure, both purely dispersive and evanescent Bloch modes of a finite range, of arbitrary three-dimensional photonic crystals. Our method, based on a well-established plane wave expansion and the weak form solution of Maxwell’s equations, computes the Fourier components of periodic structures composed of distinct homogeneous material domains from a triangulated mesh representation of the inter-material interfaces; this allows substantially more accurate representations of the geometry of complex photonic crystals than the conventional representation by a cubic voxel grid. Our method works for general two-phase composite materials, consisting of bi-anisotropic materials with tensor-valued dielectric and magnetic permittivities ε and μ and coupling matrices ς. We demonstrate for the Bragg mirror and a simple cubic crystal closely related to the Kelvin foam that relatively small numbers of Fourier components are sufficient to yield good convergence of the eigenvalues, making this method viable, despite its computational complexity. As an application, we use the single gyroid crystal to demonstrate that the consideration of both conventional and evanescent Bloch modes is necessary to predict the key features of the reflectance spectrum by analysis of the band structure, in particular for light incident along the cubic [111] direction.

  1. Miniature chemical sensor combining molecular recognition with evanescent wave cavity ring-down spectroscopy

    International Nuclear Information System (INIS)

    Pipino, Andrew C. R.

    2004-01-01

    A new chemical detection technology has been realized that addresses DOE environmental management needs. The new technology is based on a variant of the sensitive optical absorption technique, cavity ring-down spectroscopy (CRDS). Termed evanescent-wave cavity ring-down spectroscopy (EW-CRDS), the technology employs a miniature solid-state optical resonator having an extremely high Q-factor as the sensing element, where the high-Q is achieved by using ultra-low-attenuation optical materials, ultra-smooth surfaces, and ultra-high reflectivity coatings, as well as low-diffraction-loss designs. At least one total-internal reflection (TIR) mirror is integral to the resonator permitting the concomitant evanescent wave to probe the ambient environment. Several prototypes have been designed, fabricated, characterized, and applied to chemical detection. Moreover, extensions of the sensing concept have been explored to enhance selectivity, sensitivity, and range of application. Operating primarily in the visible and near IR regions, the technology inherently enables remote detection by optical fiber. Producing 11 archival publications, 5 patents, 19 invited talks, 4 conference proceedings, a CRADA, and a patent-license agreement, the project has realized a new chemical detection technology providing >100 times more sensitivity than comparable technologies, while also providing practical advantages

  2. Black phosphorus saturable absorber for ultrafast mode-locked pulse laser via evanescent field interaction

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kichul; Lee, Young Tack; Choi, Won-Kook; Song, Yong-Won [Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Lee, Junsu; Lee, Ju Han [School of Electrical and Computer Engineering, University of Seoul (Korea, Republic of)

    2015-12-15

    Black phosphorus, or BP, has found a lot of applications in recent years including photonics. The most recent studies have shown that the material has an excellent optical nonlinearity useful in many areas, one of which is in saturable absorption for passive mode-locking. A direct interaction scheme for mode-locking, however, has a potential to optically cause permanent damage to the already delicate material. Evanescent field interaction scheme has already been proven to be a useful method to prevent such danger for other 2-dimensional nanomaterials. In this report, we have utilized the evanescent field interaction to demonstrate that the optical nonlinear characteristics of BP is sufficiently strong to use in such an indirect interaction method. The successful demonstration of the passive mode-locking operation has generated pulses with the pulse duration, repetition rate, and time bandwidth product of 2.18 ps, 15.59 MHz, and 0.336, respectively. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Evanescent reverberation

    NARCIS (Netherlands)

    Serra, R.

    2012-01-01

    Abstract—One of the main statistical models for fields in reverberation chambers is the so-called "plane wave integral representation" model of David Hill. However, despite being widely known and used, this model (as stated by D. Hill himself) lacks a rigorous demonstration, especially when

  4. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  5. Operator mixing in the ɛ -expansion: Scheme and evanescent-operator independence

    Science.gov (United States)

    Di Pietro, Lorenzo; Stamou, Emmanuel

    2018-03-01

    We consider theories with fermionic degrees of freedom that have a fixed point of Wilson-Fisher type in noninteger dimension d =4 -2 ɛ . Due to the presence of evanescent operators, i.e., operators that vanish in integer dimensions, these theories contain families of infinitely many operators that can mix with each other under renormalization. We clarify the dependence of the corresponding anomalous-dimension matrix on the choice of renormalization scheme beyond leading order in ɛ -expansion. In standard choices of scheme, we find that eigenvalues at the fixed point cannot be extracted from a finite-dimensional block. We illustrate in examples a truncation approach to compute the eigenvalues. These are observable scaling dimensions, and, indeed, we find that the dependence on the choice of scheme cancels. As an application, we obtain the IR scaling dimension of four-fermion operators in QED in d =4 -2 ɛ at order O (ɛ2).

  6. Large photon drag effect of intrinsic graphene induced by plasmonic evanescent field

    Science.gov (United States)

    Luo, Ma; Li, Zhibing

    2016-12-01

    A large photon drag effect of the massless Dirac fermions in intrinsic graphene is predicted for a graphene-on-plasmonic-layer system. The surface plasmons in the plasmonic layer enlarge the wave number of the photon hundreds times more than in vacuum. The evanescent field of the surface plasmons generates a directional motion of carriers in the intrinsic graphene because of the large momentum transfer from the surface plasmon to the excited carriers. A model Hamiltonian is developed on the assumption that the in-plane wavelength of the surface plasmons is much smaller than the mean free path of the carriers. The time evolution of the density matrix is solved by perturbation method as well as numerical integration. The nondiagonal density matrix elements with momentum transfer lead to a gauge current, which is an optically driven macroscopic direct current. The dependence of the macroscopic direct current on the incident direction and intensity of the laser field is studied.

  7. Evanescent Properties of Optical Diffraction from 2-Dimensional Hexagonal Photonic Crystals and Their Sensor Applications.

    Science.gov (United States)

    Liao, Yu-Yang; Chen, Yung-Tsan; Chen, Chien-Chun; Huang, Jian-Jang

    2018-04-03

    The sensitivity of traditional diffraction grating sensors is limited by the spatial resolution of the measurement setup. Thus, a large space is required to improve sensor performance. Here, we demonstrate a compact hexagonal photonic crystal (PhC) optical sensor with high sensitivity. PhCs are able to diffract optical beams to various angles in azimuthal space. The critical wavelength that satisfies the phase matching or becomes evanescent was used to benchmark the refractive index of a target analyte applied on a PhC sensor. Using a glucose solution as an example, our sensor demonstrated very high sensitivity and a low limit of detection. This shows that the diffraction mechanism of hexagonal photonic crystals can be used for sensors when compact size is a concern.

  8. [A case of MEWDS. "The multiple evanescent white-dot syndrome"].

    Science.gov (United States)

    Lefrançois, A; Hamard, H; Corbe, C; Schmitt, A; Badelon, I; Vidal, A

    1989-01-01

    A young white man developed acute bilateral visual loss with no previous general illness. Ophthalmoscopic examination showed multiple small yellow-white lesions scattered throughout the posterior poles and mild periphery fundus. There was also fine granularity of two foveal areas and one optic disc margin was blurred. Fluorescein angiography showed early hyperfluorescence of the lesions and late staining of the retinal pigment epithelium. Electrophysiologic abnormalities were transient, asymmetric, more marked in photopic than in scotopic. The origin could be in retinal bipolar cells. These lesions regressed, with return of normal visual function within several weeks. These clinical findings are different from others acute inflammatory diseases primarily involving retinal pigment epithelium and photoreceptors. This aspect is usually described as "multiple evanescent white dot syndrome". The etiology of this syndrome remains unknown with no evidence of systemic disease. A history of flulike illness is rare.

  9. [Choroidal neovascularization followed in a patient with "Multiple Evanescent White Dot Syndrome" (MEWDS) -- a case report].

    Science.gov (United States)

    Löw, U; Palmowski, A M; Weich, C-M; Ruprecht, K W

    2004-12-01

    Since the description of the "multiple evanescent white dot syndrome" (MEWDS) by Jampol et al, choroiditis has been in the focus of interest. But the classical type of MEWDS was an exceptional case in clinical routine. A 48-year-old female presented to our hospital with a sudden unilateral visual acuity decrease and an extension of the blind spot. Ophthalmoscopy and fluorescein angiography revealed typical multiple grey-white chorioretinal patches of the same stage with lesion areas of about 100 - 200 microm compatible with the diagnose of MEWDS. Although visual acuity increased continuously the patient developed a classical choroidal neovascularization within 4 weeks. She was treated with PDT and visual acuity as well as the ophthalmoscopic diagnosis remained stable. In spite of visual improvement in MEWDS, regular control is recommended. In addition we propose to consider the diagnosis of MEWDS if an enlargement of the blind spot and CNV without lesions of the retinal pigment epithelium are diagnosed.

  10. Detection of Cadmium Ion by Evanescent Wave Based Chitosan Coated Optical Fiber Sensor

    International Nuclear Information System (INIS)

    Yulianti, I; Edy, S S; Saputra, B A; Aji, M P; Susanto; Kurdi, O

    2017-01-01

    Evanescent wave based-optical fiber sensor to detect cadmium ion is proposed. Chitosan was used by using the dip-coating method. The sensor was fabricated in U-bent shape. U-bent optical sensor at aconcentration of 2ppm and 5ppm had asensitivity of 0.2067 dBm/ppm and -0.7995 dBm/ppm, respectively. At a level of 2ppm - 5ppm, the optical sensor has a linear response with asensitivity of -0.283 dBm/ppm. The sensor takes 9.5 minutes to reach steady stateat aconcentration of 1 ppm. Atalevel of 2ppm - 5ppm, the sensor takes 5 minutes to 10.45 minutes to reach steady state. (paper)

  11. The CMS silicon tracker

    International Nuclear Information System (INIS)

    Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Leubelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B.Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Rizzo, F.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2000-01-01

    This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction

  12. The ALICE Silicon Pixel Detector System (SPD)

    CERN Document Server

    Kluge, A; Antinori, Federico; Burns, M; Cali, I A; Campbell, M; Caselle, M; Ceresa, S; Dima, R; Elias, D; Fabris, D; Krivda, Marian; Librizzi, F; Manzari, Vito; Morel, M; Moretto, Sandra; Osmic, F; Pappalardo, G S; Pepato, Adriano; Pulvirenti, A; Riedler, P; Riggi, F; Santoro, R; Stefanini, G; Torcato De Matos, C; Turrisi, R; Tydesjo, H; Viesti, G; PH-EP

    2007-01-01

    The ALICE silicon pixel detector (SPD) comprises the two innermost layers of the ALICE inner tracker system. The SPD includes 120 detector modules (half-staves) each consisting of 10 ALICE pixel chips bump bonded to two silicon sensors and one multi-chip read-out module. Each pixel chip contains 8192 active cells, so that the total number of pixel cells in the SPD is ≈ 107. The on-detector read-out is based on a multi-chip-module containing 4 ASICs and an optical transceiver module. The constraints on material budget and detector module dimensions are very demanding.

  13. CDC 6600 Cordwood Module

    CERN Multimedia

    1964-01-01

    The CDC 6600 cordwood module containing 64 silicon transistors. The module was mounted between two plates that were cooled conductive by a refrigeration unit via the front panel. The construction of this module uses the cord method, so called because the resistors seem to be stacked like cord between the two circuit boards in order to obtain a high density. The 6600 model contained nearly 6,000 such modules.

  14. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    International Nuclear Information System (INIS)

    Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

    2015-01-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  15. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2015-10-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  16. Environmental impact of thin-film GaInP/GaAs and multicrystalline silicon solar modules produced with solar electricity

    NARCIS (Netherlands)

    Mohr, N.; Meijer, A.; Huijbregts, M.A.J.; Reijnders, L.

    2009-01-01

    Background, aim, and scope: The environmental burden of photovoltaic (PV) solar modules is currently largely determined by the cumulative input of fossil energy used for module production. However, with an increased focus on limiting the emission of CO2 coming from fossil fuels, it is expected that

  17. Mobility and height detection of particle labels in an optical evanescent wave biosensor with single-label resolution

    Energy Technology Data Exchange (ETDEWEB)

    Van Ommering, Kim; Koets, Marjo; Schleipen, Jean J H B; Prins, Menno W J [Philips Research Laboratories, 5656 AE Eindhoven (Netherlands); Somers, Philip A; Van IJzendoorn, Leo J, E-mail: menno.prins@philips.co [Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

    2010-04-21

    Particle labels are used in biosensors to detect the presence and concentration of analyte molecules. In this paper we demonstrate an optical technique to measure the mobility and height of bound particle labels on a biosensor surface with single-label resolution. The technique is based on the detection of the particle-induced light scattering in an optical evanescent field. We show that the thermal particle motion in the optical evanescent field leads to intensity fluctuations that can accurately be detected. The technique is demonstrated using 290 bp (99 nm) DNA as an analyte and using polystyrene particles and magnetic particles with diameters between 500 and 1000 nm as labels. The particle intensity histograms show that quantitative height measurements are obtained for particles with uniform optical properties, and the intensity versus position plots reflect the analyte-antibody orientation and the analyte flexibility. The novel optical detection technique will lead to biosensors with very high sensitivity and specificity.

  18. Linear signal processing using silicon micro-ring resonators

    DEFF Research Database (Denmark)

    Peucheret, Christophe; Ding, Yunhong; Ou, Haiyan

    2012-01-01

    We review our recent achievements on the use of silicon micro-ring resonators for linear optical signal processing applications, including modulation format conversion, phase-to-intensity modulation conversion and waveform shaping.......We review our recent achievements on the use of silicon micro-ring resonators for linear optical signal processing applications, including modulation format conversion, phase-to-intensity modulation conversion and waveform shaping....

  19. Enhanced transmission via evanescent-to-propagating conversion in metallic nanoslits: role of Rayleigh anomalies

    International Nuclear Information System (INIS)

    Skigin, Diana C; Lester, Marcelo

    2014-01-01

    We analyze the enhanced transmission phenomenon in subwavelength slit structures near a dielectric interface. In particular, we investigate the influence of Rayleigh anomalies in the spectral position as well as in the bandwidth of Fabry–Perot resonances excited on such structures. We consider the cases of propagating and evanescent incidence, i.e., when the metallic structure is illuminated from the dielectric medium side with an incidence angle larger than the critical angle. We show that Rayleigh anomalies strongly interact with Fabry–Perot resonances, and make them deviate from the spectral positions predicted by the infinitely thin slit model. To get physical insight into this problem, we develop a simplified electromagnetic model and show that there is a close correspondence between the transmitted response of the structure and the behavior of certain function that depends on the geometrical and the illumination parameters. Our results suggest that Rayleigh anomalies strongly modify the electromagnetic response of the structure due to the existence of surface waves that modify the coupling condition between the fields inside and outside the slits. Besides, we show that even in absence of Fabry–Perot resonances, it is possible to produce enhanced transmission by taking advantage of the pseudoperiodicity condition of the fields. (paper)

  20. Choroidal neovascularisation triggered multiple evanescent white dot syndrome (MEWDS) in predisposed eyes.

    Science.gov (United States)

    Mathis, Thibaud; Delaunay, Benoit; Cahuzac, Armelle; Vasseur, Vivien; Mauget-Faÿsse, Martine; Kodjikian, Laurent

    2017-09-28

    Multiple evanescent white dot syndrome (MEWDS) is an inflammatory disease that can be associated with choroidalneovascularisation (CNV). However, few studies in the literature have described the occurrence of MEWDS in association with CNV. This paper discusses whether CNV can trigger MEWDS in a predisposed eye. A retrospective multicentric case series of six eyes in six patients with acute onset of MEWDS and evidence of previous CNV was conducted between January 2015 and January 2017. All patients underwent ophthalmic examination including multimodal imaging at baseline and during follow-up. The mean age was 32.2±12.2 years. The majority of patients were women (5/1). In each case, MEWDS was diagnosed during a recurrence or occurrence of CNV secondary to choriocapillaritis, central serous chorioretinopathy or atrophic scar, presumably due to congenital toxoplasmosis. All patients were treated with intravitreal injections of antivascular endothelial growth factor (anti-VEGF) with good anatomical and functional responses (mean gain of 0.3±0.31 logMAR). The mean duration of follow-up was 13.5±10.65 months. This study highlights a sequence in the development of MEWDS, following the occurrence or recurrence of CNV. CNV may trigger MEWDS, possibly due to the proinflammatory environment created by the retinal tissue surrounding the CNV. © Article author(s) (or their employer(s) unless otherwise stated in the text of the article) 2017. All rights reserved. No commercial use is permitted unless otherwise expressly granted.

  1. A Preliminary Test for Skin Gas Assessment Using a Porphyrin Based Evanescent Wave Optical Fiber Sensor

    Directory of Open Access Journals (Sweden)

    Roman SELYANCHYN

    2011-02-01

    Full Text Available An evanescent-wave optical fibre sensor modified with tetrakis-(4-sulfophenyl porphine (TSPP and poly(allylamine hydrochloride (PAH bilayers using layer-by-layer (LbL electrostatic self-assembly was tested to measure the gas emitted from human skin. Optical intensity changes at different wavelengths in the transmission spectrum of the porphyrin-based film were induced by the human skin gas and measured as sensor response. Influence of relative humidity, which can be a major interference to sensor response, was thoroughly studied and shown to be significantly different when compared to the influence of skin emanations. Responses of the current optical sensor system could be considered as composite sensor array, where different optical wavelengths act as channels that have selective response to specific volatile compounds. Data obtained from the sensor system was analyzed using principal component analysis (PCA. This approach enabled to distinguish skin odors of different people and their altered physiological conditions after alcohol consumption.

  2. Simulation and analysis of sensitivity for tapered fiber Bragg grating evanescent wave sensor

    Science.gov (United States)

    Xu, Hong-zhi; Lou, Jun; Tan, Yao-cheng; Li, Ben-chong; Huang, Jie; Shen, Wei-min

    2014-12-01

    We have carried out a detailed simulative study of the tapered fiber Bragg grating (TFBG) evanescent wave sensor sensitivity by using 3-D Coupled-Mode Theory method. The method is based on the spectral interrogation mode of operation. We also make numerical simulations to figure out how the uniform waist diameter and the difference of the relative refractive indexes between fiber core and external medium affect the sensitivity of this proposed sensor. The simulation results show that the sensitivity of the tapered fiber Bragg grating will be improved when the diameter of the uniform waist decrease as well as the difference of the relative refractive indexes between fiber core and external medium. And with the fixed uniform waist diameter and tapered length, when the difference of the relative refractive index of fiber core and external medium varies is 0.015RIU, the values of wavelength shift is 5.08nm, the sensitivity of the tapered fiber Bragg grating is 317.5nm/RIU. The sensitivity is higher than that of the common FBG. The results are consistent with theoretical models. The simulation results can supply the guidance for the further experimental study and refractive index sensor design, optimization and application.

  3. Portable evanescent wave fiber biosensor for highly sensitive detection of Shigella

    Science.gov (United States)

    Xiao, Rui; Rong, Zhen; Long, Feng; Liu, Qiqi

    2014-11-01

    A portable evanescent wave fiber biosensor was developed to achieve the rapid and highly sensitive detection of Shigella. In this study, a DNA probe was covalently immobilized onto fiber-optic biosensors that can hybridize with a fluorescently labeled complementary DNA. The sensitivity of detection for synthesized oligonucleotides can reach 10-10 M. The surface of the sensor can be regenerated with 0.5% sodium dodecyl sulfate solution (pH 1.9) for over 30 times without significant deterioration of performance. The total analysis time for a single sample, including the time for measurement and surface regeneration, was less than 6 min. We employed real-time polymerase chain reaction (PCR) and compared the results of both methods to investigate the actual Shigella DNA detection capability of the fiber-optic biosensor. The fiber-optic biosensor could detect as low as 102 colony-forming unit/mL Shigella. This finding was comparable with that by real-time PCR, which suggests that this method is a potential alternative to existing detection methods.

  4. Laminar Natural Convection in Square Enclosure Under an Externally Evanescent Magnetic Field

    International Nuclear Information System (INIS)

    El Jery, Atef; Ben Brahim, Ammar; Magherbi, Mourad

    2009-01-01

    This paper numerically investigates the effect of an externally evanescent magnetic field on flow patterns and heat transfer of fluid in a square cavity. The horizontal walls of the enclosure are assumed to be insulated while the vertical walls are kept isothermal. A control volume finite element method is used to solve the conservation equations at Prandtl number of 0.71. The effect of constant Hartman number on Nusselt number was studied. Validation tests with existing data demonstrate the aptitude of the present method to produce accurate results. The effects of magnetic field inclination angle from 0 degree to 90 degree on streamlines distributions are shown for different values of Hartman number. For Grashof number equal to 10 5 , the values of relaxation time of the magnetic field are chosen, so that the Lorentz force acts only in the transient state of Nusselt number in natural convection. The Nusselt number was calculated for different values of the inverse relaxation time varying from 0 to + ∞. The magnitude and the number of oscillations of the Nusselt number were observed. It has been found that no oscillation was seen at relaxation time equal to 20

  5. Infrared fiber optic evanescent wave spectroscopy: applications in biology and medicine

    Science.gov (United States)

    Afanasyeva, Natalia I.; Bruch, Reinhard F.; Katzir, Abraham

    1999-04-01

    A new powerful and highly sensitive technique for non-invasive biomedical diagnostics in vivo has been developed using Infrared Fiberoptic Evanescent Wave Fourier Transform Spectroscopy (FEW-FTIR). This compact and portable method allows to detect functional chemical groups and bonds via vibrational spectroscopy directly from surfaces including living tissue. Such differences and similarities in molecular structure of tissue and materials can be evaluated online. Operating in the attenuated total reflection (ATR) regime in the middle-infrared (MIR) range, the FEW-FTIR technique provides direct contact between the fiber probe and tissue for non-destructive, non-invasive, fast and remote (few meters) diagnostics and quality control of materials. This method utilizes highly flexible and extremely low loss unclad fibers, for example silver halide fibers. Applications of this method include investigations of normal skin, precancerous and cancerous conditions, monitoring of the process of aging, allergic reactions and radiation damage to the skin. This setup is suitable as well for the detection of the influence of environmental factors (sun, water, pollution, and weather) on skin surfaces. The FEW-FTIR technique is very promising also for fast histological examinations in vitro. In this review, we present recent investigations of skin, breast, lung, stomach, kidney tissues in vivo and ex vivo (during surgery) to define the areas of tumor localization. The main advantages of the FEW-FTIR technique for biomedical, clinical, and environmental applications are discussed.

  6. Optical biosensor based on a silicon nanowire ridge waveguide for lab on chip applications

    International Nuclear Information System (INIS)

    Gamal, Rania; Ismail, Yehea; Swillam, Mohamed A

    2015-01-01

    We propose a novel sensor using a silicon nanowire ridge waveguide (SNRW). This waveguide is comprised of an array of silicon nanowires on an insulator substrate that has the envelope of a ridge waveguide. The SNRW inherently maximizes the overlap between the material-under-test and the incident light wave by introducing voids to the otherwise bulk structure. When a sensing sample is injected, the voids within the SNRW adopt the refractive index of the material-under-test. Hence, the strong contribution of the material-under-test to the overall modal effective index will greatly augment the sensitivity. Additionally, the ridge structure provides a fabrication convenience as it covers the entire substrate, ensuring that the etching process would not damage the substrate. Finite-difference time-domain simulations are conducted and showed that the percentage change in the effective index due to a 1% change in the surrounding environment is more than 170 times the change perceived in an evanescent-detection based bulk silicon ridge waveguide. Moreover, the SNRW proves to be more sensitive than recent other, non-evanescent sensors. In addition, the detection limit for this structure was revealed to be as small as 10 −8 . A compact bimodal waveguide based on SNRW is designed and tested. It delivers high sensitivity values that offer comparable performance to similar low-index light-guiding sensing configurations; however, our proposed structure has much smaller footprints and allows high dense integration for lab-on-chip applications. (paper)

  7. Strained silicon as a new electro-optic material

    DEFF Research Database (Denmark)

    Jacobsen, Rune Shim; Andersen, Karin Nordström; Borel, Peter Ingo

    2006-01-01

    For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized1, 2. The slow progress within silicon optoelectronics, where electronic and optical...... functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon3. Recently, however, a continuous-wave Raman silicon laser was demonstrated4; if an effective modulator could also be realized in silicon, data...... processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top...

  8. Transient Response in Monolithic Mach-Zehnder Optical Modulator Using (Ba,Sr)TiO3 Film Sputtered at Low Temperature on Silicon

    Science.gov (United States)

    Suzuki, Masato; Nagata, Kazuma; Tanushi, Yuichiro; Yokoyama, Shin

    2007-04-01

    We have fabricated Mach-Zhender interferometers (MZIs) using the (Ba,Sr)TiO3 (BST) film sputter-deposited at 450 °C, which is a critical temperature for the process after metallization. An optical modulation of about 10% is achieved when 200 V is applied (electric field in BST is 1.2× 104 V/cm). However, the response time of optical modulation to step function voltage is slow (1.0-6.3 s). We propose a model for the slow transient behavior based on movable ions and a long dielectric relaxation time for the BST film, and good qualitative agreement is obtained with experimental results.

  9. Transmission Electron Microscopy of Amorphous Tandem Thin-Film Silicon Modules Produced by A Roll-to-Roll Process on Plastic Foil

    DEFF Research Database (Denmark)

    Couty, P.; Duchamp, Martial; Söderström, K.

    2011-01-01

    An improvement of the photo-current is expected when amorphous silicon solar cells are grown on a ZnO texture. A full understanding of the relationship between cell structure and electrical performance is essential for the rapid development of high efficiency VHF-tandem cells on textured substrates...... a control-lost of shape fidelity is used to smooth the texture and make it compatible with subsequent layer growth. Then, we present the electrical performances of the most promising reference solar cell single junction which was obtained on a roll-to-roll foil. Finally, a tandem amorphous/amorphous Si....... At first, we present the systematic study where amorphous cells are grown on ZnO based textures. For varying the texture, the same original master LPCVD ZnO was successively transferred to nickel molds and finally transferred to the plastic foil by roll-to-roll process. From TEM images, we show how...

  10. Search for the $B^{0}_{d} \\to µµK^0$ Decay at CDF and Studies of ATLAS Silicon Tracker Modules

    Energy Technology Data Exchange (ETDEWEB)

    Zsenei, Andras [Univ. of Geneva (Switzerland)

    2003-01-01

    The presented results show that SCT modules meet the performance required for providing precise tracking in the ATLAS experiment. The low occupancy coupled with the high tracking efficiency ensures that the SCT together with the Pixel detector provides enough precision points for excellent secondary vertex reconstruction and impact parameter resolution.

  11. Temperature-dependency analysis and correction methods of in-situ power-loss estimation for crystalline silicon modules undergoing potential-induced degradation stress testing

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    2015-01-01

    We propose a method of in-situ characterization of the photovoltaic module power at standard test conditions using superposition of the dark current-voltage (I-V) curve measured at elevated stress temperature during potential-induced degradation (PID) testing. PID chamber studies were performed o...

  12. Search for the $B^{0}_{d} \\to µµK^0$ Decay at CDF and Studies of ATLAS Silicon Tracker Modules

    CERN Document Server

    Zsenei, Andras; Wu, Xin

    The presented results show that SCT modules meet the performance required for providing precise tracking in the ATLAS experiment. The low occupancy coupled with the high tracking efficiency ensures that the SCT together with the Pixel detector provides enough precision points for excellent secondary vertex reconstruction and impact parameter resolution.

  13. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  14. Photovoltaics: sunshine and silicon

    Energy Technology Data Exchange (ETDEWEB)

    Stirzaker, Mike

    2006-05-15

    Spain's photovoltaic sector grew rapidly in 2004 only to slow down in 2005. While a State-guaranteed feed-in tariff is in place to drive a take-off, some of the smaller administrative cogs are buckling under the pressure. Projects are being further slowed by soaring world silicon prices and module shortages. Nevertheless, market volume is higher than ever before, and bio capital from both home and abroad is betting that the Spanish take-off is around the corner. (Author)

  15. Development of radiation-hard n-in-p type silicon detectors and studies on modules with transverse momentum discrimination for the CMS detector at the LHC

    CERN Document Server

    Printz, Martin; de Boer, Wim

    In der vorliegenden Dissertation werden sowohl die strahlenhärte von Silizium-Teilchendetektoren als auch die Triggerfunktionalität der zukünftigen Module für den CMS Detektor am CERN untersucht. Hierzu wurden Sensoren sowohl vor als auch nach Bestrahlung qualifiziert und mit T-CAD Simulationen verglichen. Darüberhinaus wurde ein Prototyp Triggermodul konstruiert und die Performance validiert.

  16. Suppression of sound radiation to far field of near-field acoustic communication system using evanescent sound field

    Science.gov (United States)

    Fujii, Ayaka; Wakatsuki, Naoto; Mizutani, Koichi

    2016-01-01

    A method of suppressing sound radiation to the far field of a near-field acoustic communication system using an evanescent sound field is proposed. The amplitude of the evanescent sound field generated from an infinite vibrating plate attenuates exponentially with increasing a distance from the surface of the vibrating plate. However, a discontinuity of the sound field exists at the edge of the finite vibrating plate in practice, which broadens the wavenumber spectrum. A sound wave radiates over the evanescent sound field because of broadening of the wavenumber spectrum. Therefore, we calculated the optimum distribution of the particle velocity on the vibrating plate to reduce the broadening of the wavenumber spectrum. We focused on a window function that is utilized in the field of signal analysis for reducing the broadening of the frequency spectrum. The optimization calculation is necessary for the design of window function suitable for suppressing sound radiation and securing a spatial area for data communication. In addition, a wide frequency bandwidth is required to increase the data transmission speed. Therefore, we investigated a suitable method for calculating the sound pressure level at the far field to confirm the variation of the distribution of sound pressure level determined on the basis of the window shape and frequency. The distribution of the sound pressure level at a finite distance was in good agreement with that obtained at an infinite far field under the condition generating the evanescent sound field. Consequently, the window function was optimized by the method used to calculate the distribution of the sound pressure level at an infinite far field using the wavenumber spectrum on the vibrating plate. According to the result of comparing the distributions of the sound pressure level in the cases with and without the window function, it was confirmed that the area whose sound pressure level was reduced from the maximum level to -50 dB was

  17. Evanescent field characterisation for a d-shaped optical fibre using scanning near-field optical microscopy

    International Nuclear Information System (INIS)

    Huntington, S.T.; Nugent, K.A.; Roberts, A.; Mulvaney, P.; Lo, K.M.

    1997-01-01

    Scanning near field optical microscopy is used to measure the evanescent filed and mode profile of a Ge-doped D-shaped optical fibre. The structure of the fibre is determined by differential etching followed by an investigation of the resultant topography with an atomic force microscope. This information is then used to theoretically model the expected behaviour of the fibre and it is shown that the theoretically model the expected behaviour of the fibre and it is shown that the theoretical results are in excellent agreement with the experimentally observed fields

  18. Functionalization of embedded thiol-ene waveguides for evanescent wave induced fluorescence detection in a microfluidic device

    DEFF Research Database (Denmark)

    Feidenhans'l, Nikolaj Agentoft; Jensen, Thomas Glasdam; Lafleur, Josiane P.

    2013-01-01

    We demonstrate the use of functional surface groups inherently present on off-stoichiometric thiol−ene polymers, for site-specific immobilization of biomolecules and detection by evanescent wave-induced fluorescence. An optofluidic chip featuring an embedded thiol−ene waveguide was selectively...... functionalized with biotin using photografting. The biotin was used for immobilization of fluorescently labelled streptavidin, and experiments revealed a linear correlation between streptavidin concentration and fluorescent intensity. To further demonstrate the attractiveness of using thiol−ene for optofluidic...

  19. Silicon photonic crystal nanostructures for refractive index sensing

    DEFF Research Database (Denmark)

    Dorfner, Dominic; Hürlimann, T.; Zabel, T.

    2008-01-01

    The authors present the fabrication and optical investigation of Silicon on Insulator photonic crystal drop-filters for use as refractive index sensors. Two types of defect nanocavities (L3 and H1-r) are embedded between two W1 photonic crystal waveguides to evanescently route light at the cavity...... mode frequency between input and output waveguides. Optical characterization of the structures in air and various liquids demonstrate detectivities in excess of n=n = 0:018 and n=n = 0:006 for the H1-r and L3 cavities, respectively. The measured cavity-frequencies and detector refractive index...... responsivities are in good agreement with simulations, demonstrating that the method provides a background free transducer signal with frequency selective addressing of a specic area of the sensor chip....

  20. Search for WW and WZ production in lepton, neutrino plus jets final states at CDF Run II and Silicon module production and detector control system for the ATLAS SemiConductor Tracker

    Energy Technology Data Exchange (ETDEWEB)

    Sfyrla, Anna [Univ. of Geneva (Switzerland)

    2008-03-10

    In the first part of this work, we present a search for WW and WZ production in charged lepton, neutrino plus jets final states produced in p$\\bar{p}$ collisions with √s = 1.96 TeV at the Fermilab Tevatron, using 1.2 fb-1 of data accumulated with the CDF II detector. This channel is yet to be observed in hadron colliders due to the large singleWplus jets background. However, this decay mode has a much larger branching fraction than the cleaner fully leptonic mode making it more sensitive to anomalous triple gauge couplings that manifest themselves at higher transverse W momentum. Because the final state is topologically similar to associated production of a Higgs boson with a W, the techniques developed in this analysis are also applicable in that search. An Artificial Neural Network has been used for the event selection optimization. The theoretical prediction for the cross section is σWW/WZtheory x Br(W → ℓv; W/Z → jj) = 2.09 ± 0.14 pb. They measured NSignal = 410 ± 212(stat) ± 102(sys) signal events that correspond to a cross section σWW/WZ x Br(W → ℓv; W/Z → jj) = 1.47 ± 0.77(stat) ± 0.38(sys) pb. The 95% CL upper limit to the cross section is estimated to be σ x Br(W → ℓv; W/Z → jj) < 2.88 pb. The second part of the present work is technical and concerns the ATLAS SemiConductor Tracker (SCT) assembly phase. Although technical, the work in the SCT assembly phase is of prime importance for the good performance of the detector during data taking. The production at the University of Geneva of approximately one third of the silicon microstrip end-cap modules is presented. This collaborative effort of the university of Geneva group that lasted two years, resulted in 655 produced modules, 97% of which were good modules, constructed within the mechanical and electrical specifications and delivered in the SCT collaboration for assembly on the end-cap disks. The SCT end-caps and barrels

  1. Hybrid Design, Procurement and Testing for the LHCb Silicon Tracker

    CERN Document Server

    Bay, A; Frei, R; Jiménez-Otero, S; Perrin, A; Tran, MT; Van Hunen, J J; Vervink, K; Vollhardt, A; Agari, M; Bauer, C; Blouw, J; Hofmann, W; Knöpfle, K T; Löchner, S; Schmelling, M; Schwingenheuer, B; Smale, N J; Adeva, B; Esperante-Pereira, D; Lois, C; Vázquez, P; Lehner, F; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Needham, M; Steinkamp, O; Straumann, U; Volyanskyy, D; Voss, H; Wenger, A

    2005-01-01

    The Silicon Tracker of the LHCb experiment consists of four silicon detector stations positioned along the beam line of the experiment. The detector modules of each station are constructed from wide pitch silicon microstrip sensors. Located at the module's end, a polyimide hybrid is housing the front-end electronics. The assembly of the more than 600 hybrids has been outsourced to industry. We will report on the design and production status of the hybrids for the LHCb Silicon Tracker and describe the quality assurance tests. Particular emphasis is laid on the vendor qualifying and its impact on our hybrid design that we experienced during the prototyping phase.

  2. Transport in a magnetic field modulated graphene superlattice.

    Science.gov (United States)

    Li, Yu-Xian

    2010-01-13

    Using the transfer matrix method, we study the transport properties through a magnetic field modulated graphene superlattice. It is found that the electrostatic barrier, the magnetic vector potential, and the number of wells in a superlattice modify the transmission remarkably. The angular dependent transmission is blocked by the magnetic vector potential because of the appearance of the evanescent states at certain incident angles, and the region of Klein tunneling shifts to the left. The angularly averaged conductivities exhibit oscillatory behavior. The magnitude and period of oscillation depend sensitively on the height of the electrostatic barrier, the number of wells, and the strength of the modulated magnetic field.

  3. A light-driven modulation of electric conductance through the adsorption of azobenzene onto silicon-doped- and pyridine-like N3-vacancy graphene.

    Science.gov (United States)

    Zhao, Jun; Liu, Chunyan; Ma, Jing

    2017-12-14

    The ability to modulate the conductance of an electronic device under light irradiation is crucial to the practical applications of nanoscale electronics. Density functional theory calculations predict that the conductance of the photo-responsive graphene-based nanocomposites can be tuned through the noncovalent adsorption of an azobenzene (AB) derivative onto pristine, Si-doped, and pyridine-like N 3 -vacancy graphene. AB@graphene systems were found to exhibit a visible-light response within the low-frequency region, rendering the trans-to-cis isomerizations of these nanocomposites under the irradiation of solar light. The excellent solar light absorption performances of these hybrids can then be used to modulate the conductance of both N 3 -vacancy- and Si-doped-graphene AB hybrids effectively through the reversible change of the effective conjugate length of the AB molecule in the photoisomerization. In addition, the solar thermal energy up to 1.53 eV per AB molecule can be stored in the designed nanocomposites with the doped graphene. These findings provide clues for making multifunctional materials with potential applications as both optically controlled nanoelectronics and solar energy storage devices.

  4. Interactive effects of silicon and arbuscular mycorrhiza in modulating ascorbate-glutathione cycle and antioxidant scavenging capacity in differentially salt-tolerant Cicer arietinum L. genotypes subjected to long-term salinity.

    Science.gov (United States)

    Garg, Neera; Bhandari, Purnima

    2016-09-01

    Salinity is the major environmental constraint that affects legume productivity by inducing oxidative stress. Individually, both silicon (Si) nutrition and mycorrhization have been reported to alleviate salt stress. However, the mechanisms adopted by both in mediating stress responses are poorly understood. Thus, pot trials were undertaken to evaluate comparative as well as interactive effects of Si and/or arbuscular mycorrhiza (AM) in alleviating NaCl toxicity in modulating oxidative stress and antioxidant defence mechanisms in two Cicer arietinum L. (chickpea) genotypes-HC 3 (salt-tolerant) and CSG 9505 (salt-sensitive). Plants subjected to different NaCl concentrations (0-100 mM) recorded a substantial increase in the rate of superoxide radical (O2 (·-)), H2O2, lipoxygenase (LOX) activity and malondialdehyde (MDA) content, which induced leakage of ions and disturbed Ca(2+)/Na(+) ratio in roots and leaves. Individually, Si and AM reduced oxidative burst by strengthening antioxidant enzymatic activities (superoxide dismutase (SOD), catalase (CAT) and guaiacol peroxidase (GPOX)). Si was relatively more efficient in reducing accumulation of stress metabolites, while mycorrhization significantly up-regulated antioxidant machinery and modulated ascorbate-glutathione (ASA-GSH) cycle. Combined applications of Si and AM complemented each other in reducing reactive oxygen species (ROS) build-up by further enhancing the antioxidant defence responses. Magnitude of ROS-mediated oxidative burden was lower in HC 3 which correlated strongly with more effective AM symbiosis, better capacity to accumulate Si and stronger defence response when compared with CSG 9505. Study indicated that Si and/or AM fungal amendments upgraded salt tolerance through a dynamic shift from oxidative destruction towards favourable antioxidant defence system in stressed chickpea plants.

  5. Studies of flat-plate solar air collectors with absorber plates made of amorphous silicon photovoltaic modules; Amorphous taiyo denchi module wo shunetsuban to shita heibangata kukishiki shunetsuki no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Sato, K; Ito, S; Miura, N [Kanagawa Institute of Technology, Kanagawa (Japan)

    1996-10-27

    A light/heat hybrid air type heat collector has been developed in which heat is collected by solar cell panels. In Type 1 heat collector provided with a glass cover, two modules are connected in series and placed under a glass cover to serve as a heat collecting plate, each module built of a steel plate and two thin-film amorphous solar cells bonded to the steel plate. Air runs under the heat collecting plate. Type 2 heat collector is a Type 1 heat collector minus the glass cover. Air is taken in by a fan, runs in a vinyl chloride tube, and then through the heat collector where it is heated by the sun, and goes out at the exit. Heat collecting performance was subjected to theoretical analysis. This heat collector approximated in point of heat collection a model using a board painted black, which means that the new type functions effectively as an air-type heat collector. Operating as a photovoltaic power generator, the covered type generated approximately 20% less than the uncovered type under 800W/m{sup 2} insolation conditions. Type 1 has been in service for five months, and Type 2 for 2 months. At present, both are free of troubles such as deformation and the amorphous solar cell modules have deteriorated but a little. 4 refs., 9 figs.

  6. Evanescent-wave and ambient chiral sensing by signal-reversing cavity ringdown polarimetry.

    Science.gov (United States)

    Sofikitis, Dimitris; Bougas, Lykourgos; Katsoprinakis, Georgios E; Spiliotis, Alexandros K; Loppinet, Benoit; Rakitzis, T Peter

    2014-10-02

    Detecting and quantifying chirality is important in fields ranging from analytical and biological chemistry to pharmacology and fundamental physics: it can aid drug design and synthesis, contribute to protein structure determination, and help detect parity violation of the weak force. Recent developments employ microwaves, femtosecond pulses, superchiral light or photoionization to determine chirality, yet the most widely used methods remain the traditional methods of measuring circular dichroism and optical rotation. However, these signals are typically very weak against larger time-dependent backgrounds. Cavity-enhanced optical methods can be used to amplify weak signals by passing them repeatedly through an optical cavity, and two-mirror cavities achieving up to 10(5) cavity passes have enabled absorption and birefringence measurements with record sensitivities. But chiral signals cancel when passing back and forth through a cavity, while the ubiquitous spurious linear birefringence background is enhanced. Even when intracavity optics overcome these problems, absolute chirality measurements remain difficult and sometimes impossible. Here we use a pulsed-laser bowtie cavity ringdown polarimeter with counter-propagating beams to enhance chiral signals by a factor equal to the number of cavity passes (typically >10(3)); to suppress the effects of linear birefringence by means of a large induced intracavity Faraday rotation; and to effect rapid signal reversals by reversing the Faraday rotation and subtracting signals from the counter-propagating beams. These features allow absolute chiral signal measurements in environments where background subtraction is not feasible: we determine optical rotation from α-pinene vapour in open air, and from maltodextrin and fructose solutions in the evanescent wave produced by total internal reflection at a prism surface. The limits of the present polarimeter, when using a continuous-wave laser locked to a stable, high

  7. Will silicon be the photonic material of the third millenium?

    International Nuclear Information System (INIS)

    Pavesi, L

    2003-01-01

    Silicon microphotonics, a technology which merges photonics and silicon microelectronic components, is rapidly evolving. Many different fields of application are emerging: transceiver modules for optical communication systems, optical bus systems for ULSI circuits, I/O stages for SOC, displays, .... In this review I will give a brief motivation for silicon microphotonics and try to give the state-of-the-art of this technology. The ingredient still lacking is the silicon laser: a review of the various approaches will be presented. Finally, I will try to draw some conclusions where silicon is predicted to be the material to achieve a full integration of electronic and optical devices. (topical review)

  8. An evanescent wave biosensor--Part I: Fluorescent signal acquisition from step-etched fiber optic probes.

    Science.gov (United States)

    Anderson, G P; Golden, J P; Ligler, F S

    1994-06-01

    A fiber-optic biosensor capable of remote continuous monitoring has recently been designed. To permit sensing at locations separate from the optoelectronic instrumentation, long optical fibers are utilized. An evanescent wave immuno-probe is prepared by removing the cladding near the distal end of the fiber and covalently attaching antibodies to the core. Probes with a radius unaltered from that of the original core inefficiently returned the signal produced upon binding the fluorescent-labelled antigen. To elucidate the limiting factors in signal acquisition, a series of fibers with increasingly reduced probe core radius was examined. The results were consistent with the V-number mismatch, the difference in mode carrying capacity between the clad and unclad fiber, being a critical factor in limiting signal coupling from the fiber probe. However, it was also delineated that conditions which conserve excitation power, such that power in the evanescent wave is optimized, must also be met to obtain a maximal signal. The threshold sensitivity for the optimal step-etched fiber probe was improved by over 20-fold in an immunoassay, although, it was demonstrated that signal acquisition decreased along the probe length, suggesting that a sensor region of uniform radius is not ideal.

  9. Sol-gel based mid-infrared evanescent wave sensors for detection of organophosphate pesticides in aqueous solution

    Energy Technology Data Exchange (ETDEWEB)

    Janotta, Markus; Karlowatz, Manfred; Vogt, Frank; Mizaikoff, Boris

    2003-10-31

    This work demonstrates the application of organically modified sol-gels as recognition layers combined with mid-infrared evanescent wave sensors for in situ detection of nitrated organics in aqueous media. Sol-gels were prepared by acid-catalyzed copolymerization of phenyltrimethoxysilane (PTMOS) and tetramethoxysilane (TMOS) and were spin-coated onto ZnSe attenuated total reflection (ATR) waveguides. These sensors were investigated with respect to their enrichment properties of selected organophosphates, i.e. parathion, fenitrothion and paraoxon, respectively, and their capability of suppressing interfering water background absorptions. Figures of merit are derived from calibration curves determined to assess sensitivity and reproducibility of the applied sensor system. It can be concluded that sol-gel coated infrared optical sensors enable reproducible detection of organophosphates down to the sub-ppm concentration range. Furthermore, measurement of spiked river water samples demonstrates feasibility as remote field sensor system. Once the required sensitivity is achieved, sol-gel based mid-infrared evanescent wave sensors have the potential of being an alternative to commonly applied biosensors for detection of organophosphates in environmental analysis, since they provide superior mechanical and chemical stability during application relevant periods of time.

  10. A disposable evanescent wave fiber optic sensor coated with a molecularly imprinted polymer as a selective fluorescence probe.

    Science.gov (United States)

    Ton, Xuan-Anh; Acha, Victor; Bonomi, Paolo; Tse Sum Bui, Bernadette; Haupt, Karsten

    2015-02-15

    We have developed a disposable evanescent wave fiber optic sensor by coating a molecularly imprinted polymer (MIP) containing a fluorescent signaling group on a 4-cm long polystyrene optical waveguide. The MIP is composed of a naphthalimide-based fluorescent monomer, which shows fluorescence enhancement upon binding with carboxyl-containing molecules. The herbicide 2,4-dichlorophenoxyacetic acid and the mycotoxin citrinin were used as model analytes. The coating of the MIP was either performed ex-situ, by dip-coating the fiber with MIP particles synthesized beforehand, or in-situ by evanescent-wave photopolymerization on the fiber. The sensing element was interrogated with a fiber-coupled spectrofluorimeter. The fiber optic sensor detects targets in the low nM range and exhibits specific and selective recognition over structural analogs and non-related carboxyl-containing molecules. This technology can be extended to other carboxyl-containing analytes, and to a broader spectrum of targets using different fluorescent monomers. Copyright © 2014 Elsevier B.V. All rights reserved.

  11. Micro benchtop optics by bulk silicon micromachining

    Science.gov (United States)

    Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  12. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  13. Seventh workshop on the role of impurities and defects in silicon device processing

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-08-01

    This workshop is the latest in a series which has looked at technological issues related to the commercial development and success of silicon based photovoltaic (PV) modules. PV modules based on silicon are the most common at present, but face pressure from other technologies in terms of cell performance and cell cost. This workshop addresses a problem which is a factor in the production costs of silicon based PV modules.

  14. Energy modulation of nonrelativistic electrons in an optical near field on a metal microslit

    Science.gov (United States)

    Ishikawa, R.; Bae, J.; Mizuno, K.

    2001-04-01

    Energy modulation of nonrelativistic electrons with a laser beam using a metal microslit as an interaction circuit has been investigated. An optical near field is induced in the proximity of the microslit by illumination of the laser beam. The electrons passing close to the slit are accelerated or decelerated by an evanescent wave contained in the near field whose phase velocity is equal to the velocity of the electrons. The electron-evanescent wave interaction in the microslit has been analyzed theoretically and experimentally. The theory has predicted that electron energy can be modulated at optical frequencies. Experiments performed in the infrared region have verified theoretical predictions. The electron-energy changes of more than ±5 eV with a 10 kW CO2 laser pulse at the wavelength of 10.6 μm has been successfully observed for an electron beam with an energy of less than 80 keV.

  15. Quantum conductance in silicon quantum wires

    CERN Document Server

    Bagraev, N T; Klyachkin, L E; Malyarenko, A M; Gehlhoff, W; Ivanov, V K; Shelykh, I A

    2002-01-01

    The results of investigations of electron and hole quantum conductance staircase in silicon quantum wires are presented. The characteristics of self-ordering quantum wells of n- and p-types, which from on the silicon (100) surface in the nonequilibrium boron diffusion process, are analyzed. The results of investigations of the quantum conductance as the function of temperature, carrier concentration and modulation degree of silicon quantum wires are given. It is found out, that the quantum conductance of the one-dimensional channels is observed, for the first time, at an elevated temperature (T >= 77 K)

  16. Coating of silicon pore optics

    DEFF Research Database (Denmark)

    Cooper-Jensen, Carsten P.; Ackermann, M.; Christensen, Finn Erland

    2009-01-01

    For the International X-ray observatory (IXO), a mirror module with an effective area of 3 m2 at 1.25 keV and at least 0.65 m2 at 6 keV has to be realized. To achieve this goal, coated silicon pore optics has been developed over the last years. One of the challenges is to coat the Si plates...

  17. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  18. Core-cladding mode coupling and recoupling in photonic crystal fiber for enhanced overlap of evanescent field using long-period gratings

    Czech Academy of Sciences Publication Activity Database

    He, Z.; Zhu, Y.; Kaňka, Jiří; Du, H.

    2010-01-01

    Roč. 18, č. 2 (2010), s. 507-512 ISSN 1094-4087 R&D Projects: GA ČR GA102/08/1719 Institutional research plan: CEZ:AV0Z20670512 Keywords : Photonic crystal fiber * Long-period grating * Fiber-optic evanescent sensor Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 3.749, year: 2010

  19. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  20. Characterization of 1.2×1.2 mm2 silicon photomultipliers with Ce:LYSO, Ce:GAGG, and Pr:LuAG scintillation crystals as detector modules for positron emission tomography

    Science.gov (United States)

    Omidvari, N.; Sharma, R.; Ganka, T. R.; Schneider, F. R.; Paul, S.; Ziegler, S. I.

    2017-04-01

    The design of a positron emission tomography (PET) scanner is specially challenging since it should not compromise high spatial resolution, high sensitivity, high count-rate capability, and good energy and time resolution. The geometrical design of the system alongside the characteristics of the individual PET detector modules contributes to the overall performance of the scanner. The detector performance is mainly influenced by the characteristics of the photo-detector and the scintillation crystal. Although silicon photomultipliers (SiPMs) have already proven to be promising photo-detectors for PET, their performance is highly influenced by micro-cell structure and production technology. Therefore, five types of SiPMs produced by KETEK with an active area size of 1.2 × 1.2 mm2 were characterized in this study. The SiPMs differed in the production technology and had micro-cell sizes of 25, 50, 75, and 100 μm. Performance of the SiPMs was evaluated in terms of their breakdown voltage, temperature sensitivity, dark count rate, and correlated noise probability. Subsequently, energy resolution and coincidence time resolution (CTR) of the SiPMs were measured with five types of crystals, including two Ce:LYSO, two Ce:GAGG, and one Pr:LuAG. Two crystals with a geometry of 1.5 × 1.5 × 6 mm3 were available from each type. The best CTR achieved was ~ 240 ps, which was obtained with the Ce:LYSO crystals coupled to the 50 μm SiPM produced with the trench technology. The best energy resolution for the 511 keV photo-peak was ~ 11% and was obtained with the same SiPM coupled to the Ce:GAGG crystals.

  1. Characterization of 1.2×1.2 mm2 silicon photomultipliers with Ce:LYSO, Ce:GAGG, and Pr:LuAG scintillation crystals as detector modules for positron emission tomography

    International Nuclear Information System (INIS)

    Omidvari, N.; Sharma, R.; Schneider, F.R.; Ziegler, S.I.; Ganka, T.R.; Paul, S.

    2017-01-01

    The design of a positron emission tomography (PET) scanner is specially challenging since it should not compromise high spatial resolution, high sensitivity, high count-rate capability, and good energy and time resolution. The geometrical design of the system alongside the characteristics of the individual PET detector modules contributes to the overall performance of the scanner. The detector performance is mainly influenced by the characteristics of the photo-detector and the scintillation crystal. Although silicon photomultipliers (SiPMs) have already proven to be promising photo-detectors for PET, their performance is highly influenced by micro-cell structure and production technology. Therefore, five types of SiPMs produced by KETEK with an active area size of 1.2 × 1.2 mm 2 were characterized in this study. The SiPMs differed in the production technology and had micro-cell sizes of 25, 50, 75, and 100 μm. Performance of the SiPMs was evaluated in terms of their breakdown voltage, temperature sensitivity, dark count rate, and correlated noise probability. Subsequently, energy resolution and coincidence time resolution (CTR) of the SiPMs were measured with five types of crystals, including two Ce:LYSO, two Ce:GAGG, and one Pr:LuAG. Two crystals with a geometry of 1.5 × 1.5 × 6 mm 3 were available from each type. The best CTR achieved was ∼ 240 ps, which was obtained with the Ce:LYSO crystals coupled to the 50 μm SiPM produced with the trench technology. The best energy resolution for the 511 keV photo-peak was ∼ 11% and was obtained with the same SiPM coupled to the Ce:GAGG crystals.

  2. Experience with the silicon strip detector of ALICE

    NARCIS (Netherlands)

    Nooren, G.J.L.

    2009-01-01

    The Silicon Strip Detector (SSD) forms the two outermost layers of the ALICE Inner Track- ing System (ITS), connecting the TPC with the inner layers of the ITS. The SSD consists of 1698 double-sided silicon microstrip modules, 95 μm pitch, distributed in two cylindrical bar- rels, whose radii are

  3. Disposable photonic integrated circuits for evanescent wave sensors by ultra-high volume roll-to-roll method.

    Science.gov (United States)

    Aikio, Sanna; Hiltunen, Jussi; Hiitola-Keinänen, Johanna; Hiltunen, Marianne; Kontturi, Ville; Siitonen, Samuli; Puustinen, Jarkko; Karioja, Pentti

    2016-02-08

    Flexible photonic integrated circuit technology is an emerging field expanding the usage possibilities of photonics, particularly in sensor applications, by enabling the realization of conformable devices and introduction of new alternative production methods. Here, we demonstrate that disposable polymeric photonic integrated circuit devices can be produced in lengths of hundreds of meters by ultra-high volume roll-to-roll methods on a flexible carrier. Attenuation properties of hundreds of individual devices were measured confirming that waveguides with good and repeatable performance were fabricated. We also demonstrate the applicability of the devices for the evanescent wave sensing of ambient refractive index. The production of integrated photonic devices using ultra-high volume fabrication, in a similar manner as paper is produced, may inherently expand methods of manufacturing low-cost disposable photonic integrated circuits for a wide range of sensor applications.

  4. Exact solution for the reflection and diffraction of atomic de Broglie waves by a travelling evanescent laser wave

    International Nuclear Information System (INIS)

    Witte, N.S.

    1997-01-01

    The exact solution to the problem of reflection and diffraction of atomic de Broglie waves by a travelling evanescent wave is found starting with a bare-state formulation. The solution for the wavefunctions, the tunnelling losses and the non-adiabatic losses are given exactly in terms of hyper-Bessel functions, and are valid for all detuning and Rabi frequencies, thus generalizing previous approximate methods. Furthermore we give the limiting cases of all amplitudes in the uniform semiclassical limit, which is valid in all regions including near the classical turning points, and in the large and weak coupling cases. Exact results for the zero detuning case are obtained in terms of Bessel functions. We find our uniform semiclassical limit to be closer to the exact result over the full range of parameter values than the previously reported calculations. The current knowledge of hyper-Bessel function properties is reviewed in order to apply this to the physical problems imposed

  5. Calculation of back-reflected intensities of a Na-atom beam by standing evanescent E-M field

    International Nuclear Information System (INIS)

    Murphy, J.; Goodman, P.; Smith, A.

    1992-01-01

    A method is described for the computation of the back-scattered intensities of atomic beams, diffracted from the evanescent field generated outside an optical plate by internal counter-propagating laser beams. The method derives from a procedure developed for the similar but importantly differing problem of Low Energy Electron Diffraction, (Lynch and Smith, 1983). Modifications to that theory required for the present problem bring the equations closer to the RHEED solution proposed by Ichimiya (1983). Results from multi-slicing from the same narrow field depth (2 Aangstroems) in this strong field case show the success and also limitations of the program in its present form. Computation to greater depth in the strong field leads to numerical instabilities due to the incorporation of very large tunnelling terms. This requires the application of boundary conditions at each slice rather than the end of the multi-slice calculation. 7 refs., 3 figs

  6. The mechanical Design of the LHCb Silicon Trigger Tracker

    CERN Document Server

    Gassner, J; Steiner, S

    2010-01-01

    In this note, we describe the design of the Silicon Trigger Tracker for the LHCb experiment. We emphasize on detector module and station design and characterize the layout of all relevant parts and components.

  7. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2016-02-16

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  8. Assembly and validation of the SSD silicon microstrip detector of ALICE

    NARCIS (Netherlands)

    de Haas, A.P.; Kuijer, P.G.; Nooren, G.J.L.; Oskamp, C.J.; Sokolov, A.N.; van den Brink, A.

    2006-01-01

    The Silicon Strip Detector (SSD) forms the two outermost layers of the Inner Tracking System (ITS) of ALICE. The SSD detector consists of 1698 double-sided silicon microstrip modules. The electrical connection between silicon sensor and front-end electronics is made via TAB-bonded

  9. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  10. Silicon Tracker Design for the ILC

    International Nuclear Information System (INIS)

    Nelson, T.; SLAC

    2005-01-01

    The task of tracking charged particles in energy frontier collider experiments has been largely taken over by solid-state detectors. While silicon microstrip trackers offer many advantages in this environment, large silicon trackers are generally much more massive than their gaseous counterparts. Because of the properties of the machine itself, much of the material that comprises a typical silicon microstrip tracker can be eliminated from a design for the ILC. This realization is the inspiration for a tracker design using lightweight, short, mass-producible modules to tile closed, nested cylinders with silicon microstrips. This design relies upon a few key technologies to provide excellent performance with low cost and complexity. The details of this concept are discussed, along with the performance and status of the design effort

  11. Building CMS Pixel Barrel Detectur Modules

    CERN Document Server

    König, S; Horisberger, R.; Meier, B.; Rohe, T.; Streuli, S.; Weber, R.; Kastli, H.Chr.; Erdmann, W.

    2007-01-01

    For the barrel part of the CMS pixel tracker about 800 silicon pixel detector modules are required. The modules are bump bonded, assembled and tested at the Paul Scherrer Institute. This article describes the experience acquired during the assembly of the first ~200 modules.

  12. CALICE silicon-tungsten electromagnetic calorimeter

    Indian Academy of Sciences (India)

    A highly granular electromagnetic calorimeter prototype based on tungsten absorber and sampling units equipped with silicon pads as sensitive devices for signal collection is under construction. The full prototype will have in total 30 layers and be read out by about 10000 Si cells of 1 × 1 cm2. A first module consisting of 14 ...

  13. Research on fabrication technology for thin film solar cells for practical use. Research on low-cost fabrication technology for large-area modules (production technology for amorphous silicon solar cell modules); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Daimenseki module no tei cost seizo gijutsu (amorphous taiyo denchi module seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of amorphous Si solar cell modules in fiscal 1994. (1) On process technology for prototype film substrate solar cells, an advanced preprocessing equipment for film substrates, stepping roll type film forming technology, and prototype submodules were studied. A conversion efficiency of 7.2% was achieved by use of the submodule formed in an effective region of 40 {times} 40cm{sup 2}. (2) On efficiency improvement technology for film substrate solar cells, p/i and n/i interfaces, forming condition for Ag film electrodes, film thickness of transparent electrode ITO, and optimum transmissivity were studied. (3) On technology for advanced solar cells, high-quality a-SiGe: H film, ion control in plasma CVD, and a-Si film formation by plasma CVD using SiH2Cl2 were studied as production technology of narrow gap materials. (4) On advanced two-layer tandem solar cells, the defect density in optical degradation of a-Si cells by reverse bias dark current was evaluated, and outdoor exposure data were analyzed. 4 figs., 1 tab.

  14. Multiwavelength mode-locked erbium-doped fiber laser based on the interaction of graphene and fiber-taper evanescent field

    International Nuclear Information System (INIS)

    Luo, Z Q; Wang, J Z; Zhou, M; Xu, H Y; Cai, Z P; Ye, C C

    2012-01-01

    We report on the generation of multiwavelength passively mode-locked pulses in an erbium-doped fiber laser (EDFL) based on the interaction of graphene and fiber-taper evanescent field. Graphene-polymer nanocomposites in aqueous suspension are trapped by the optical evanescent light and deposited on taper region. The graphene-deposited fiber-taper device not only acts as an excellent saturable absorber for mode-locking, but also induces a polarizing effect to form an artificial birefringent filter for multiwavelength selection. By simultaneously exploiting both functions of this device, four-wavelength continuous-wave mode-locking operation of an EDFL is stably initiated with a pulse width of 8.8 ps and a fundamental repetition rate of 8.034 MHz. This is the first time, to our knowledge, the mode-locked EDFL using such a new geometry of graphene-based tapered-fiber saturable absorber has been demonstrated

  15. Silicon photonics: some remaining challenges

    Science.gov (United States)

    Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

    2016-03-01

    This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

  16. The LHCb Inner Tracker Module Production Steps and Quality Assurance

    CERN Document Server

    Bettler, M O; Esperante, D; Fauland, P; van Hunen, J; Knecht, M; Koestner, S; Tran, M T; Perez Trigo, E; Vazquez, P; Voss, H

    2010-01-01

    This note describes the various production step for the LHCb Inner Tracker silicon modules. We quickly sketch where the various items are produced and mention their acceptance criteria where applicable. A detail description is given of the various production and testing steps of the silicon detector modules in Lausanne and at CERN.

  17. Photoelectron Spectroscopy of CdSe Nanocrystals in the Gas Phase: A Direct Measure of the Evanescent Electron Wave Function of Quantum Dots

    Science.gov (United States)

    2013-01-01

    researchers have used ultrafast transient absorption spectros - copy to show that the charge separation rate of Type II core− shell QDs depends on the extent...the first direct measurement of the evanescent electron density of the QD exciton. We use ultrafast two-photon photoelectron spectros - copy (2PPE) to...clusters are well preserved after the aerosol system, as observed using UV − visible spectroscopy (Supporting Information Figure S1). The isolation of the

  18. Radiation damage studies for the D0 silicon detector

    International Nuclear Information System (INIS)

    Lehner, F.

    2004-01-01

    We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

  19. Radiation damage studies for the DOe silicon detector

    International Nuclear Information System (INIS)

    Lehner, Frank

    2004-01-01

    We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

  20. Neuromorphic photonic networks using silicon photonic weight banks.

    Science.gov (United States)

    Tait, Alexander N; de Lima, Thomas Ferreira; Zhou, Ellen; Wu, Allie X; Nahmias, Mitchell A; Shastri, Bhavin J; Prucnal, Paul R

    2017-08-07

    Photonic systems for high-performance information processing have attracted renewed interest. Neuromorphic silicon photonics has the potential to integrate processing functions that vastly exceed the capabilities of electronics. We report first observations of a recurrent silicon photonic neural network, in which connections are configured by microring weight banks. A mathematical isomorphism between the silicon photonic circuit and a continuous neural network model is demonstrated through dynamical bifurcation analysis. Exploiting this isomorphism, a simulated 24-node silicon photonic neural network is programmed using "neural compiler" to solve a differential system emulation task. A 294-fold acceleration against a conventional benchmark is predicted. We also propose and derive power consumption analysis for modulator-class neurons that, as opposed to laser-class neurons, are compatible with silicon photonic platforms. At increased scale, Neuromorphic silicon photonics could access new regimes of ultrafast information processing for radio, control, and scientific computing.

  1. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  2. Transparent solar cell window module

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Joseph Lik Hang; Chen, Ruei-Tang; Hwang, Gan-Lin; Tsai, Ping-Yuan [Nanopowder and Thin Film Technology Center, ITRI South, Industrial Technology Research Institute, Tainan County 709 (China); Lin, Chien-Chu [I-Lai Acrylic Corporation, Tainan City (China)

    2010-03-15

    A transparent solar cell window module based on the integration of traditional silicon solar cells and organic-inorganic nanocomposite material was designed and fabricated. The transparent solar cell window module was composed of a nanocomposite light-guide plate and traditional silicon solar cells. The preparation of the nanocomposite light-guide plate is easy without modification of the traditional casting process, the nanoparticles sol can be added directly to the polymethyl methacrylate (PMMA) monomer syrup during the process. The solar energy collected by this window can be used to power up small household electrical appliances. (author)

  3. Photovoltaic cell module and method of forming

    Science.gov (United States)

    Howell, Malinda; Juen, Donnie; Ketola, Barry; Tomalia, Mary Kay

    2017-12-12

    A photovoltaic cell module, a photovoltaic array including at least two modules, and a method of forming the module are provided. The module includes a first outermost layer and a photovoltaic cell disposed on the first outermost layer. The module also includes a second outermost layer disposed on the photovoltaic cell and sandwiching the photovoltaic cell between the second outermost layer and the first outermost layer. The method of forming the module includes the steps of disposing the photovoltaic cell on the first outermost layer, disposing a silicone composition on the photovoltaic cell, and compressing the first outermost layer, the photovoltaic cell, and the second layer to form the photovoltaic cell module.

  4. Evanescent wave cavity ring-down spectroscopy (EW-CRDS) as a probe of macromolecule adsorption kinetics at functionalized interfaces.

    Science.gov (United States)

    O'Connell, Michael A; de Cuendias, Anne; Gayet, Florence; Shirley, Ian M; Mackenzie, Stuart R; Haddleton, David M; Unwin, Patrick R

    2012-05-01

    Evanescent wave cavity ring-down spectroscopy (EW-CRDS) has been employed to study the interfacial adsorption kinetics of coumarin-tagged macromolecules onto a range of functionalized planar surfaces. Such studies are valuable in designing polymers for complex systems where the degree of interaction between the polymer and surface needs to be tailored. Three tagged synthetic polymers with different functionalities are examined: poly(acrylic acid) (PAA), poly(3-sulfopropyl methacrylate, potassium salt) (PSPMA), and a mannose-modified glycopolymer. Adsorption transients at the silica/water interface are found to be characteristic for each polymer, and kinetics are deduced from the initial rates. The chemistry of the adsorption interfaces has been varied by, first, manipulation of silica surface chemistry via the bulk pH, followed by surfaces modified by poly(L-glutamic acid) (PGA) and cellulose, giving five chemically different surfaces. Complementary atomic force microscopy (AFM) imaging has been used for additional surface characterization of adsorbed layers and functionalized interfaces to allow adsorption rates to be interpreted more fully. Adsorption rates for PSPMA and the glycopolymer are seen to be highly surface sensitive, with significantly higher rates on cellulose-modified surfaces, whereas PAA shows a much smaller rate dependence on the nature of the adsorption surface.

  5. “En-Face” Spectral-Domain Optical Coherence Tomography Findings in Multiple Evanescent White Dot Syndrome

    Directory of Open Access Journals (Sweden)

    Flore De bats

    2014-01-01

    Full Text Available Purpose. The recent use of “en-face” enhanced-depth imaging spectral-domain optical coherence tomography (EDI SD-OCT helps distinguish the retinal layers involved in the physiopathology of multiple evanescent white dot syndrome (MEWDS. Methods. Four patients presenting with MEWDS underwent a comprehensive ocular examination including C-scan (“en-face” EDI SD-OCT at the initial visit and during follow-up. Results. C-scans combined with the other multimodal imaging enabled the visualization of retinal damage. Acute lesions appeared as diffuse and focal disruptions occurring in the ellipsoid and interdigitation zones. The match between autofluorescence imaging, indocyanine green angiography, and “en-face” OCT helped identify the acute microstructural damages in the outer retina further than the choroid. Follow-up using “en-face” EDI-OCT revealed progressive and complete recovery of the central outer retinal layers. Conclusion. “En-face” EDI SD-OCT identified the site of initial damage in MEWDS as the photoreceptors and the interdigitation layers rather than the choroid. Moreover, “en-face” OCT is helpful in the follow-up of these lesions by being able to show the recovery of the outer retinal layers.

  6. Large-Time Behavior of Solutions to Vlasov-Poisson-Fokker-Planck Equations: From Evanescent Collisions to Diffusive Limit

    Science.gov (United States)

    Herda, Maxime; Rodrigues, L. Miguel

    2018-03-01

    The present contribution investigates the dynamics generated by the two-dimensional Vlasov-Poisson-Fokker-Planck equation for charged particles in a steady inhomogeneous background of opposite charges. We provide global in time estimates that are uniform with respect to initial data taken in a bounded set of a weighted L^2 space, and where dependencies on the mean-free path τ and the Debye length δ are made explicit. In our analysis the mean free path covers the full range of possible values: from the regime of evanescent collisions τ → ∞ to the strongly collisional regime τ → 0. As a counterpart, the largeness of the Debye length, that enforces a weakly nonlinear regime, is used to close our nonlinear estimates. Accordingly we pay a special attention to relax as much as possible the τ -dependent constraint on δ ensuring exponential decay with explicit τ -dependent rates towards the stationary solution. In the strongly collisional limit τ → 0, we also examine all possible asymptotic regimes selected by a choice of observation time scale. Here also, our emphasis is on strong convergence, uniformity with respect to time and to initial data in bounded sets of a L^2 space. Our proofs rely on a detailed study of the nonlinear elliptic equation defining stationary solutions and a careful tracking and optimization of parameter dependencies of hypocoercive/hypoelliptic estimates.

  7. Recurrent focal choroidal excavation following multiple evanescent white dot syndrome (MEWDS) associated with acute idiopathic blind spot enlargement.

    Science.gov (United States)

    Jabbarpoor Bonyadi, Mohammad Hossein; Hassanpour, Kiana; Soheilian, Masoud

    2018-04-01

    To present a recurrent case of conforming focal choroidal excavation (FCE) following multiple evanescent white dot syndrome (MEWDS) in a 25-year-old woman. Following spontaneous MEWDS sings resolution our patient noted a recurrent decrease in vision. Repeated OCT revealed elevation and mild disruption of RPE layer at fovea without previous angiographic MEWDS signs. At this time, short-term systemic steroid therapy was started and visual acuity became normal. Following quiescence of the new-onset phase, the conforming type of FCE located in inferior macula appeared in OCT. In the following next 2 years recurrence of presumptive focal subfoveal choriocapillaritis occurred for three times presenting with blurred vision. During every acute attack, above-mentioned FCE disappeared and returned back again after resolution of presumptive focal choriocapillaritis. This is the first and unique case of recurrent type of FCE following MEWDS. It seems to disappear during active phase of presumptive focal choriocapillaritis and then returns after the eye has become quiescent.

  8. Development of Embedded Fiber-Optic Evanescent Wave Sensors for Optical Characterization of Graphite Anodes in Lithium-Ion Batteries.

    Science.gov (United States)

    Ghannoum, AbdulRahman; Nieva, Patricia; Yu, Aiping; Khajepour, Amir

    2017-11-29

    The development, fabrication, and embedment of fiber-optic evanescent wave sensors (FOEWSs) to monitor the state of charge (SOC) and the state of health (SOH) of lithium-ion batteries (LIBs) are presented. Etching of FOEWSs is performed using a solution of 40 wt % ammonium fluoride (NH 4 F) and 49 wt % hydrofluoric acid (HF) (6:1), which is found to be superior to an etching solution containing just 49 wt % HF. FOEWSs were characterized using glycerol and found to have the highest sensitivity in a lithium-ion battery when they lose 92% of their transmittance in the presence of glycerol on their sensing region. The physical effect that the FOEWS has on the graphite anode is also investigated and is found to be much more significant in Swagelok cells compared to that in in-house-fabricated pouch cells, mainly due to pressure variation. The FOEWS was found to be most sensitive to the changes in the LIB when it was completely embedded using a slurry of graphite anode material within a pouch cell. The optimized fabrication process of the embedded FOEWS demonstrates the potential of using such sensors commercially for real-time monitoring of the SOC and SOH of LIBs while in operation.

  9. Evaluating a novel application of optical fibre evanescent field absorbance: rapid measurement of red colour in winegrape homogenates

    Science.gov (United States)

    Lye, Peter G.; Bradbury, Ronald; Lamb, David W.

    Silica optical fibres were used to measure colour (mg anthocyanin/g fresh berry weight) in samples of red wine grape homogenates via optical Fibre Evanescent Field Absorbance (FEFA). Colour measurements from 126 samples of grape homogenate were compared against the standard industry spectrophotometric reference method that involves chemical extraction and subsequent optical absorption measurements of clarified samples at 520 nm. FEFA absorbance on homogenates at 520 nm (FEFA520h) was correlated with the industry reference method measurements of colour (R2 = 0.46, n = 126). Using a simple regression equation colour could be predicted with a standard error of cross-validation (SECV) of 0.21 mg/g, with a range of 0.6 to 2.2 mg anthocyanin/g and a standard deviation of 0.33 mg/g. With a Ratio of Performance Deviation (RPD) of 1.6, the technique when utilizing only a single detection wavelength, is not robust enough to apply in a diagnostic sense, however the results do demonstrate the potential of the FEFA method as a fast and low-cost assay of colour in homogenized samples.

  10. Silicon photonics at the University of Surrey

    Science.gov (United States)

    Reed, G. T.; Mashanovich, G.; Gardes, F. Y.; Gwilliam, R. M.; Wright, N. M.; Thomson, D. J.; Timotijevic, B. D.; Litvinenko, K. L.; Headley, W. R.; Smith, A. J.; Knights, A. P.; Jessop, P. E.; Tarr, N. G.; Deane, J. H. B.

    2009-05-01

    Silicon Photonics is a field that has seen rapid growth and dramatic changes in the past 5 years. According to the MIT Communications Technology Roadmap [1], which aims to establish a common architecture platform across market sectors with a potential $20B in annual revenue, silicon photonics is among the top ten emerging technologies. This has in part been a consequence of the recent involvement of large semiconductor companies around the world, particularly in the USA. Significant investment in the technology has also followed in Japan, Korea, and in the European Union. Low cost is a key driver, so it is imperative to pursue technologies that are mass-producible. Therefore, Silicon Photonics continues to progress at a rapid rate. This paper will describe some of the work of the Silicon Photonics Group at the University of Surrey in the UK. The work is concerned with the sequential development of a series of components for silicon photonic optical circuits, and some of the components are discussed here. In particular the paper will present work on optical waveguides, optical filters, modulators, and lifetime modification of carriers generated by two photon absorption, to improve the performance of Raman amplifiers in silicon.

  11. Nonlinear optical properties of silicon waveguides

    International Nuclear Information System (INIS)

    Tsang, H K; Liu, Y

    2008-01-01

    Recent work on two-photon absorption (TPA), stimulated Raman scattering (SRS) and optical Kerr effect in silicon-on-insulator (SOI) waveguides is reviewed and some potential applications of these optical nonlinearities, including silicon-based autocorrelation detectors, optical amplifiers, high speed optical switches, optical wavelength converters and self-phase modulation (SPM), are highlighted. The importance of free carriers generated by TPA in nonlinear devices is discussed, and a generalized definition of the nonlinear effective length to cater for nonlinear losses is proposed. How carrier lifetime engineering, and in particular the use of helium ion implantation, can enhance the nonlinear effective length for nonlinear devices is also discussed

  12. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  13. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  14. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  15. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

    2015-07-14

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  16. Silicon spintronics: Progress and challenges

    International Nuclear Information System (INIS)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-01-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized

  17. Flexible integration of free-standing nanowires into silicon photonics.

    Science.gov (United States)

    Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

    2017-06-14

    Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

  18. Ion beam figuring of silicon aspheres

    Science.gov (United States)

    Demmler, Marcel; Zeuner, Michael; Luca, Alfonz; Dunger, Thoralf; Rost, Dirk; Kiontke, Sven; Krüger, Marcus

    2011-03-01

    Silicon lenses are widely used for infrared applications. Especially for portable devices the size and weight of the optical system are very important factors. The use of aspherical silicon lenses instead of spherical silicon lenses results in a significant reduction of weight and size. The manufacture of silicon lenses is more challenging than the manufacture of standard glass lenses. Typically conventional methods like diamond turning, grinding and polishing are used. However, due to the high hardness of silicon, diamond turning is very difficult and requires a lot of experience. To achieve surfaces of a high quality a polishing step is mandatory within the manufacturing process. Nevertheless, the required surface form accuracy cannot be achieved through the use of conventional polishing methods because of the unpredictable behavior of the polishing tools, which leads to an unstable removal rate. To overcome these disadvantages a method called Ion Beam Figuring can be used to manufacture silicon lenses with high surface form accuracies. The general advantage of the Ion Beam Figuring technology is a contactless polishing process without any aging effects of the tool. Due to this an excellent stability of the removal rate without any mechanical surface damage is achieved. The related physical process - called sputtering - can be applied to any material and is therefore also applicable to materials of high hardness like Silicon (SiC, WC). The process is realized through the commercially available ion beam figuring system IonScan 3D. During the process, the substrate is moved in front of a focused broad ion beam. The local milling rate is controlled via a modulated velocity profile, which is calculated specifically for each surface topology in order to mill the material at the associated positions to the target geometry. The authors will present aspherical silicon lenses with very high surface form accuracies compared to conventionally manufactured lenses.

  19. The mid-IR silicon photonics sensor platform (Conference Presentation)

    Science.gov (United States)

    Kimerling, Lionel; Hu, Juejun; Agarwal, Anuradha M.

    2017-02-01

    Advances in integrated silicon photonics are enabling highly connected sensor networks that offer sensitivity, selectivity and pattern recognition. Cost, performance and the evolution path of the so-called `Internet of Things' will gate the proliferation of these networks. The wavelength spectral range of 3-8um, commonly known as the mid-IR, is critical to specificity for sensors that identify materials by detection of local vibrational modes, reflectivity and thermal emission. For ubiquitous sensing applications in this regime, the sensors must move from premium to commodity level manufacturing volumes and cost. Scaling performance/cost is critically dependent on establishing a minimum set of platform attributes for point, wearable, and physical sensing. Optical sensors are ideal for non-invasive applications. Optical sensor device physics involves evanescent or intra-cavity structures for applied to concentration, interrogation and photo-catalysis functions. The ultimate utility of a platform is dependent on sample delivery/presentation modalities; system reset, recalibration and maintenance capabilities; and sensitivity and selectivity performance. The attributes and performance of a unified Glass-on-Silicon platform has shown good prospects for heterogeneous integration on materials and devices using a low cost process flow. Integrated, single mode, silicon photonic platforms offer significant performance and cost advantages, but they require discovery and qualification of new materials and process integration schemes for the mid-IR. Waveguide integrated light sources based on rare earth dopants and Ge-pumped frequency combs have promise. Optical resonators and waveguide spirals can enhance sensitivity. PbTe materials are among the best choices for a standard, waveguide integrated photodetector. Chalcogenide glasses are capable of transmitting mid-IR signals with high transparency. Integrated sensor case studies of i) high sensitivity analyte detection in

  20. Optimization of silicon waveguides for gas detection application at mid-IR wavelengths

    Science.gov (United States)

    Butt, M. A.; Kozlova, E. S.

    2018-04-01

    There are several trace gases such as N2O, CO, CO2, NO, H2O, NO2, NH3, CH4 etc. which have their absorption peaks in Mid-IR spectrum These gases strongly absorb in the mid-IR > 2.5 μm spectral region due to their fundamental rotational and vibrational transitions. In this work, we modelled and optimized three different kinds of waveguides such as rib, strip and slot based on silicon platform to obtain maximum evanescent field ratio. These waveguides are designed at 3.39 μm and 4.67 μm which correspond to the absorption line of methane (CH4) and carbon monoxide (CO) respectively.

  1. Probing thermal evanescent waves with a scattering-type near-field microscope

    International Nuclear Information System (INIS)

    Kajihara, Y; Kosaka, K; Komiyama, S

    2011-01-01

    Long wavelength infrared (LWIR) waves contain many important spectra of matters like molecular motions. Thus, probing spontaneous LWIR radiation without external illumination would reveal detailed mesoscopic phenomena that cannot be probed by any other measurement methods. Here we developed a scattering-type scanning near-field optical microscope (s-SNOM) and demonstrated passive near-field microscopy at 14.5 µm wavelength. Our s-SNOM consists of an atomic force microscope and a confocal microscope equipped with a highly sensitive LWIR detector, called a charge-sensitive infrared phototransistor (CSIP). In our s-SNOM, photons scattered by a tungsten probe are collected by an objective of the confocal LWIR microscope and are finally detected by the CSIP. To suppress the far-field background, we vertically modulated the probe and demodulated the signal with a lock-in amplifier. With the s-SNOM, a clear passive image of 3 µm pitch Au/SiC gratings was successfully obtained and the spatial resolution was estimated to be 60 nm (λ/240). The radiation from Au and GaAs was suggested to be due to thermally excited charge/current fluctuations and surface phonons, respectively. This s-SNOM has the potential to observe mesoscopic phenomena such as molecular motions, biomolecular protein interactions and semiconductor conditions in the future

  2. Two-Copy Wavelength Conversion of an 80 Gbit/s Serial Data Signal Using Cross-Phase Modulation in a Silicon Nanowire and Detailed Pump-Probe Characterisation

    DEFF Research Database (Denmark)

    Ji, Hua; Cleary, C. S.; Dailey, J. M.

    2012-01-01

    We experimentally demonstrate 80 Gbit/s wavelength conversion to two copies by simultaneously extracting the blue- and red-shifted sidebands from XPM in a silicon nanowire. Bit error rates of 10-9 with only ~2 dB power penalty is achieved for both sidebands. Detailed pump-probe characterisation r...

  3. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost large-area module manufacturing technology - Development of application type novel-structure thin-film solar cell manufacturing technology - Development of amorphous silicon/thin-film polycrystalline silicon hybrid thin-film solar cell manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu / amorphous silicon/usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The project aims to manufacture the above for the development of low-cost high-efficiency practical cells. Technologies were developed to homogeneously fabricate films with an average efficiency of 10% or more in a 100mm times 85mm area in a STAR (naturally surface texture and enhanced absorption with a back reflector) structure thin-film polycrystalline silicon (poly-Si) solar cell. The texture shape was improved for a higher light trapping effect and a STAR structure cell highly sensitive to long wavelengths and fit for use for a hybrid cell bottom layer was obtained. Various cells were examined for temperature characteristics, and it was found that thin-film poly-Si cells present a temperature coefficient equal to or less than that of bulk single-crystal silicon systems, and hybrid cells a temperature coefficient similar to that of a-Si systems. The technology was applied to a hybrid solar cell in which an a-Si cell was placed on STAR structure thin film poly-Si cells, and a resultant 3-layer a-Si/poly-Si/poly-Si cell exhibited a stabilization factor of 12.0% after 550 hours of optical irradiation. (NEDO)

  4. Key Success Factors and Future Perspective of Silicon-Based Solar Cells

    Directory of Open Access Journals (Sweden)

    S. Binetti

    2013-01-01

    Full Text Available Today, after more than 70 years of continued progress on silicon technology, about 85% of cumulative installed photovolatic (PV modules are based on crystalline silicon (c-Si. PV devices based on silicon are the most common solar cells currently being produced, and it is mainly due to silicon technology that the PV has grown by 40% per year over the last decade. An additional step in the silicon solar cell development is ongoing, and it is related to a further efficiency improvement through defect control, device optimization, surface modification, and nanotechnology approaches. This paper attempts to briefly review the most important advances and current technologies used to produce crystalline silicon solar devices and in the meantime the most challenging and promising strategies acting to increase the efficiency to cost/ratio of silicon solar cells. Eventually, the impact and the potentiality of using a nanotechnology approach in a silicon-based solar cell are also described.

  5. Design of electro-absorption modulator with tapered-mode coupler on the GeSi layer

    International Nuclear Information System (INIS)

    Li, Ym; Cheng, Bw

    2013-01-01

    A tapered-mode coupler integrated GeSi electro-absorption (EA) modulator is investigated theoretically. To improve the parameter insensitivity and modulation efficiency of the GeSi EA modulator based on evanescent coupling, a tapered coupler on the GeSi layer is introduced in our design. The two coupling mechanisms in our suggested structure are compared. Both the beam propagation method (BPM) calculation and coupling mode theory show almost 100% power transfer from the bottom rib waveguide to the GeSi layer. After a series of designs of the tapered coupler, we get a modulator with the advantages of both evanescent-coupling modulators (Feng et al 2011 Opt. Express 19 7062–7, Feng et al 2012 Opt. Express 20 22224–32, Liu et al 2008 Nature Photon. 2 433–7, Liu et al 2007 Opt. Express 15 623–8) and butt-coupling modulators (Lim et al 2011 Opt. Express 19 5040–6), that are ease of fabrication, low coupling loss, performance stability and high modulation efficiency. (paper)

  6. CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-12-01

    Today\\'s mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

  7. CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Kutbee, Arwa T.; Hanna, Amir; Hussain, Muhammad Mustafa

    2014-01-01

    Today's mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

  8. IMAGING WITH MULTIMODAL ADAPTIVE-OPTICS OPTICAL COHERENCE TOMOGRAPHY IN MULTIPLE EVANESCENT WHITE DOT SYNDROME: THE STRUCTURE AND FUNCTIONAL RELATIONSHIP.

    Science.gov (United States)

    Labriola, Leanne T; Legarreta, Andrew D; Legarreta, John E; Nadler, Zach; Gallagher, Denise; Hammer, Daniel X; Ferguson, R Daniel; Iftimia, Nicusor; Wollstein, Gadi; Schuman, Joel S

    2016-01-01

    To elucidate the location of pathological changes in multiple evanescent white dot syndrome (MEWDS) with the use of multimodal adaptive optics (AO) imaging. A 5-year observational case study of a 24-year-old female with recurrent MEWDS. Full examination included history, Snellen chart visual acuity, pupil assessment, intraocular pressures, slit lamp evaluation, dilated fundoscopic exam, imaging with Fourier-domain optical coherence tomography (FD-OCT), blue-light fundus autofluorescence (FAF), fundus photography, fluorescein angiography, and adaptive-optics optical coherence tomography. Three distinct acute episodes of MEWDS occurred during the period of follow-up. Fourier-domain optical coherence tomography and adaptive-optics imaging showed disturbance in the photoreceptor outer segments (PR OS) in the posterior pole with each flare. The degree of disturbance at the photoreceptor level corresponded to size and extent of the visual field changes. All findings were transient with delineation of the photoreceptor recovery from the outer edges of the lesion inward. Hyperautofluorescence was seen during acute flares. Increase in choroidal thickness did occur with each active flare but resolved. Although changes in the choroid and RPE can be observed in MEWDS, Fourier-domain optical coherence tomography, and multimodal adaptive optics imaging localized the visually significant changes seen in this disease at the level of the photoreceptors. These transient retinal changes specifically occur at the level of the inner segment ellipsoid and OS/RPE line. En face optical coherence tomography imaging provides a detailed, yet noninvasive method for following the convalescence of MEWDS and provides insight into the structural and functional relationship of this transient inflammatory retinal disease.

  9. Deposition of functionalized polymer layers in surface plasmon resonance immunosensors by in-situ polymerization in the evanescent wave field.

    Science.gov (United States)

    Chegel, Vladimir; Whitcombe, Michael J; Turner, Nicholas W; Piletsky, Sergey A

    2009-01-01

    Traditionally, the integration of sensing gel layers in surface plasmon resonance (SPR) is achieved via "bulk" methods, such as precipitation, spin-coating or in-situ polymerization onto the total surface of the sensor chip, combined with covalent attachment of the antibody or receptor to the gel surface. This is wasteful in terms of materials as the sensing only occurs at the point of resonance interrogated by the laser. By isolating the sensing materials (antibodies, enzymes, aptamers, polymers, MIPs, etc.) to this exact spot a more efficient use of these recognition elements will be achieved. Here we present a method for the in-situ formation of polymers, using the energy of the evanescent wave field on the surface of an SPR device, specifically localized at the point of interrogation. Using the photo-initiator couple of methylene blue (sensitizing dye) and sodium p-toluenesulfinate (reducing agent) we polymerized a mixture of N,N-methylene-bis-acrylamide and methacrylic acid in water at the focal point of SPR. No polymerization was seen in solution or at any other sites on the sensor surface. Varying parameters such as monomer concentration and exposure time allowed precise control over the polymer thickness (from 20-200 nm). Standard coupling with 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide and N-hydroxysuccinimide was used for the immobilization of protein G which was used to bind IgG in a typical biosensor format. This model system demonstrated the characteristic performance for this type of immunosensor, validating our deposition method.

  10. Low-temperature fabrication and characterization of a symmetric hybrid organic–inorganic slab waveguide for evanescent light microscopy

    Science.gov (United States)

    Agnarsson, Björn; Mapar, Mokhtar; Sjöberg, Mattias; Alizadehheidari, Mohammadreza; Höök, Fredrik

    2018-06-01

    Organic and inorganic solid materials form the building blocks for most of today’s high-technological instruments and devices. However, challenges related to dissimilar material properties have hampered the synthesis of thin-film devices comprised of both organic and inorganic films. We here give a detailed description of a carefully optimized processing protocol used for the construction of a three-layered hybrid organic–inorganic waveguide-chip intended for combined scattering and fluorescence evanescent-wave microscopy in aqueous environments using conventional upright microscopes. An inorganic core layer (SiO2 or Si3N4), embedded symmetrically in an organic cladding layer (CYTOP), aids simple, yet efficient in-coupling of light, and since the organic cladding layer is refractive index matched to water, low stray-light (background) scattering of the propagating light is ensured. Another major advantage is that the inorganic core layer makes the chip compatible with multiple well-established surface functionalization schemes that allows for a broad range of applications, including detection of single lipid vesicles, metallic nanoparticles or cells in complex environments, either label-free—by direct detection of scattered light—or by use of fluorescence excitation and emission. Herein, focus is put on a detailed description of the fabrication of the waveguide-chip, together with a fundamental characterization of its optical properties and performance, particularly in comparison with conventional epi illumination. Quantitative analysis of images obtained from both fluorescence and scattering intensities from surface-immobilized polystyrene nanoparticles in suspensions of different concentrations, revealed enhanced signal-to-noise and signal-to-background ratios for the waveguide illumination compared to the epi-illumination.

  11. Ultra-high-speed Optical Signal Processing using Silicon Photonics

    DEFF Research Database (Denmark)

    Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

    with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...... of the ultra-fast nonlinear response of silicon photonic waveguides. These chips offer ultra-broadband wavelength operation, ultra-high timing resolution and ultra-fast response, and when used appropriately offer energy-efficient switching. In this presentation we review some all-optical functionalities based...... on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show...

  12. Polarization-sensitive surface plasmon enhanced ellipsometry biosensor using the photoelastic modulation technique

    DEFF Research Database (Denmark)

    Yuan, Scott Wu; Ho, Ho Pui; Wu, S.Y.

    2009-01-01

    A surface plasmon enhanced ellipsometry (SPEE) biosensor scheme based on the use of a photoelastic modulator (PEM) is reported. We show that the polarization parameters of a laser beam, tan , cos and ellipse orientation angle , can be directly measured by detecting the modulation signals at the f......A surface plasmon enhanced ellipsometry (SPEE) biosensor scheme based on the use of a photoelastic modulator (PEM) is reported. We show that the polarization parameters of a laser beam, tan , cos and ellipse orientation angle , can be directly measured by detecting the modulation signals...... at the first and second harmonics of the modulated frequency under a certain birefringence geometry. This leads to accurate measurement of refractive index variations within the evanescent field region close to the gold sensor surface, thereby enabling biosensing applications. Our experimental results confirm...

  13. Nonlinear Silicon Photonic Signal Processing Devices for Future Optical Networks

    Directory of Open Access Journals (Sweden)

    Cosimo Lacava

    2017-01-01

    Full Text Available In this paper, we present a review on silicon-based nonlinear devices for all optical nonlinear processing of complex telecommunication signals. We discuss some recent developments achieved by our research group, through extensive collaborations with academic partners across Europe, on optical signal processing using silicon-germanium and amorphous silicon based waveguides as well as novel materials such as silicon rich silicon nitride and tantalum pentoxide. We review the performance of four wave mixing wavelength conversion applied on complex signals such as Differential Phase Shift Keying (DPSK, Quadrature Phase Shift Keying (QPSK, 16-Quadrature Amplitude Modulation (QAM and 64-QAM that dramatically enhance the telecom signal spectral efficiency, paving the way to next generation terabit all-optical networks.

  14. Heterogeneous silicon mesostructures for lipid-supported bioelectric interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Yuanwen; Carvalho-de-Souza, João L.; Wong, Raymond C. S.; Luo, Zhiqiang; Isheim, Dieter; Zuo, Xiaobing; Nicholls, Alan W.; Jung, Il Woong; Yue, Jiping; Liu, Di-Jia; Wang, Yucai; De Andrade, Vincent; Xiao, Xianghui; Navrazhnykh, Luizetta; Weiss, Dara E.; Wu, Xiaoyang; Seidman, David N.; Bezanilla, Francisco; Tian, Bozhi

    2016-06-27

    Silicon-based materials have widespread application as biophysical tools and biomedical devices. Here we introduce a biocompatible and degradable mesostructured form of silicon with multi-scale structural and chemical heterogeneities. The material was synthesized using mesoporous silica as a template through a chemical vapour deposition process. It has an amorphous atomic structure, an ordered nanowire-based framework and random submicrometre voids, and shows an average Young’s modulus that is 2–3 orders of magnitude smaller than that of single-crystalline silicon. In addition, we used the heterogeneous silicon mesostructures to design a lipid-bilayer-supported bioelectric interface that is remotely controlled and temporally transient, and that permits non-genetic and subcellular optical modulation of the electrophysiology dynamics in single dorsal root ganglia neurons. Our findings suggest that the biomimetic expansion of silicon into heterogeneous and deformable forms can open up opportunities in extracellular biomaterial or bioelectric systems.

  15. New Opportunities in Crystalline Silicon R and D

    International Nuclear Information System (INIS)

    Menna, P.

    1998-01-01

    To support the expected growth of the silicon solar cell industry, we believe that research and development (R ampersand D) activities should be carried out in the following areas: polysilicon feedstock for the PV industry; thin-layer silicon deposition methods, and more environmentally benign cell and module manufacturing processes. For each of these activities, we identify the main issues that needed to be addressed

  16. Monocrystalline silicon solar cells applied in photovoltaic system

    OpenAIRE

    L.A. Dobrzański; A. Drygała; M. Giedroć; M. Macek

    2012-01-01

    Purpose: The aim of the paper is to fabricate the monocrystalline silicon solar cells using the conventional technology by means of screen printing process and to make of them photovoltaic system.Design/methodology/approach: The investigation of current – voltage characteristic to determinate basic electrical properties of monocrystalline silicon solar cells were investigated under Standard Test Condition. Photovoltaic module was produced from solar cells with the largest short-circuit curren...

  17. Environmentally benign silicon solar cell manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S. [National Renewable Energy Lab., Golden, CO (United States); Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States); Menna, P. [National Agency for New Technologies Energy and Environment, Portici (Italy); Strebkov, D.S.; Pinov, A.; Zadde, V. [Intersolarcenter, Moscow (Russian Federation)

    1998-09-01

    The manufacturing of silicon devices--from polysilicon production, crystal growth, ingot slicing, wafer cleaning, device processing, to encapsulation--requires many steps that are energy intensive and use large amounts of water and toxic chemicals. In the past two years, the silicon integrated-circuit (IC) industry has initiated several programs to promote environmentally benign manufacturing, i.e., manufacturing practices that recover, recycle, and reuse materials resources with a minimal consumption of energy. Crystalline-silicon solar photovoltaic (PV) modules, which accounted for 87% of the worldwide module shipments in 1997, are large-area devices with many manufacturing steps similar to those used in the IC industry. Obviously, there are significant opportunities for the PV industry to implement more environmentally benign manufacturing approaches. Such approaches often have the potential for significant cost reduction by reducing energy use and/or the purchase volume of new chemicals and by cutting the amount of used chemicals that must be discarded. This paper will review recent accomplishments of the IC industry initiatives and discuss new processes for environmentally benign silicon solar-cell manufacturing.

  18. Chiral silicon nanostructures

    International Nuclear Information System (INIS)

    Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

    2006-01-01

    Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

  19. Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  20. Porous silicon advances in drug delivery and immunotherapy.

    Science.gov (United States)

    Savage, David J; Liu, Xuewu; Curley, Steven A; Ferrari, Mauro; Serda, Rita E

    2013-10-01

    Biomedical applications of porous silicon include drug delivery, imaging, diagnostics and immunotherapy. This review summarizes new silicon particle fabrication techniques, dynamics of cellular transport, advances in the multistage vector approach to drug delivery, and the use of porous silicon as immune adjuvants. Recent findings support superior therapeutic efficacy of the multistage vector approach over single particle drug delivery systems in mouse models of ovarian and breast cancer. With respect to vaccine development, multivalent presentation of pathogen-associated molecular patterns on the particle surface creates powerful platforms for immunotherapy, with the porous matrix able to carry both antigens and immune modulators. Copyright © 2013 Elsevier Ltd. All rights reserved.

  1. FY 2000 report on the results of the development of technology for commercialization of the photovoltaic power system - Development of production technology of thin film solar cells. Development of production technology of low-cost/large-area modules (Development of production technology of application type new structure thin film solar cells/Development of production technology of amorphous silicon-thin film polycrystal silicon hybrid thin film solar cells); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Tei cost dai menseki mojuru seizo gijutsu kaihatsu (Oyogata shinkozo hakumaku taiyodenchi no seizo gijutsu kaihatsu, Amorufasusilicon hakumaku takessho silicon hybrid hakumaku taiyodenchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    For the purpose of developing the application type new structure thin film solar cell that is low-cost, high-efficient and practical, a developmental study was made of production technology of amorphous silicon/thin film polycrystal silicon hybrid thin film solar cells, and the FY 2000 results were reported. In the study of the heightening of efficiency of the small area hybrid cell, a structure was adopted in which a transparent intermediate layer was installed between a-Si cell and bottom poly-Si cell, and the initial efficiency of 14.0% was obtained in the small area cell 1cm square. As to the large area hybrid module, the initial efficiency of 11.7% and maximum output of 44.9W were achieved in the large area substrate module with a size of 910 x 455mm. In the indoor/outdoor evaluation of the output of hybrid modules, conducted were the outdoor measurement and the output measurement made every season under the mock spectral light in two-light simulator. In summer, F.F. was improved by spectral gain and anneal effect, and the effective output about 8% higher was recognized in the module after stabilization. (NEDO)

  2. ATLAS Silicon Microstrip Tracker Operation and Performance

    CERN Document Server

    Nagai, K; The ATLAS collaboration

    2012-01-01

    The Semi-Conductor Tracker (SCT) is one of the key precision tracking devices in the ATLAS experiment at CERN Large Hadron Collider (LHC). The SCT was constructed of 4088 modules for a total of 6.3 million silicon strips and was installed into the ATLAS experiment in 2007. The SCT has been fully operational since then, and achieves a good tracking performance from the startup of the LHC operation.

  3. Silicon Nitride Background in Nanophotonic Waveguide Enhanced Raman Spectroscopy

    Directory of Open Access Journals (Sweden)

    Ashim Dhakal

    2017-02-01

    Full Text Available Recent studies have shown that evanescent Raman spectroscopy using a silicon nitride (SiN nanophotonic waveguide platform has higher signal enhancement when compared to free-space systems. However, signal-to-noise ratio from the waveguide at a low analyte concentration is constrained by the shot-noise from the background light originating from the waveguide itself. Hence, understanding the origin and properties of this waveguide background luminescence (WGBL is essential to developing mitigation strategies. Here, we identify the dominating component of the WGBL spectrum composed of a broad Raman scattering due to momentum selection-rule breaking in amorphous materials, and several peaks specific to molecules embedded in the core. We determine the maximum of the Raman scattering efficiency of the WGBL at room temperature for 785 nm excitation to be 4.5 ± 1 × 10−9 cm−1·sr−1, at a Stokes shift of 200 cm−1. This efficiency decreases monotonically for higher Stokes shifts. Additionally, we also demonstrate the use of slotted waveguides and quasi-transverse magnetic polarization as some mitigation strategies.

  4. ATLAS Silicon Microstrip Tracker Operation and Performance

    CERN Document Server

    Chalupkova, I; The ATLAS collaboration

    2012-01-01

    The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data is transferred to the off-detector readout electronics via optical fibers. The completed SCT has been installed inside the ATLAS experimental cavern since 2007 and has been operational since then. Calibration data has been taken regularly and analyzed to determine the noise performance of the ...

  5. ATLAS Silicon Microstrip Tracker Operation and Performance

    CERN Document Server

    NAGAI, K; The ATLAS collaboration

    2012-01-01

    The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data is transferred to the off-detector readout electronics via optical fibres. The completed SCT has been installed inside the ATLAS experimental cavern since 2007 and has been operational since then. Calibration data has been taken regularly and analysed to determine the noise performance of the ...

  6. ATLAS Silicon Microstrip Tracker Operation and Performance

    CERN Document Server

    Chalupkova, I; The ATLAS collaboration

    2012-01-01

    The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector (ID) of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules with a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each side of the barrel). The SCT silicon microstrip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICs ABCD3TA, working in the binary readout mode. Data is transferred to the off-detector readout electronics via optical fibres. SCT has been installed inside the ATLAS experimental cavern since 2007 and has been operational ever since. Calibration data has been taken regularly and analysed to determine the noise performance of the system. ...

  7. 77 FR 5487 - Countervailing Duty Investigation of Crystalline Silicon Photovoltaic Cells, Whether or Not...

    Science.gov (United States)

    2012-02-03

    ... modules or panels) and 8541.40.6030 (solar cells, not assembled into modules or made up into panels) for... crystalline silicon photovoltaic cells, whether or not assembled into modules (solar cells), from the People's Republic of China (PRC), filed in proper form by SolarWorld Industries America Inc. (Petitioner).\\1\\ The...

  8. 3D silicon strip detectors

    International Nuclear Information System (INIS)

    Parzefall, Ulrich; Bates, Richard; Boscardin, Maurizio; Dalla Betta, Gian-Franco; Eckert, Simon; Eklund, Lars; Fleta, Celeste; Jakobs, Karl; Kuehn, Susanne; Lozano, Manuel; Pahn, Gregor; Parkes, Chris; Pellegrini, Giulio; Pennicard, David; Piemonte, Claudio; Ronchin, Sabina; Szumlak, Tomasz; Zoboli, Andrea; Zorzi, Nicola

    2009-01-01

    While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10 15 N eq /cm 2 , which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10 15 N eq /cm 2 . The tests were performed with three systems: a highly focused IR-laser with 5μm spot size to make position-resolved scans of the charge collection efficiency, an Sr 90 β-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the results obtained with 3D-STC-modules.

  9. 3D silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Parzefall, Ulrich [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany)], E-mail: ulrich.parzefall@physik.uni-freiburg.de; Bates, Richard [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Boscardin, Maurizio [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Dalla Betta, Gian-Franco [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Kuehn, Susanne [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Lozano, Manuel [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Pellegrini, Giulio [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Piemonte, Claudio; Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Szumlak, Tomasz [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Zoboli, Andrea [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

    2009-06-01

    While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10{sup 15}N{sub eq}/cm{sup 2}, which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10{sup 15}N{sub eq}/cm{sup 2}. The tests were performed with three systems: a highly focused IR-laser with 5{mu}m spot size to make position-resolved scans of the charge collection efficiency, an Sr{sup 90}{beta}-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of

  10. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  11. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  12. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  13. Improved ATIR concentrator photovoltaic module

    Science.gov (United States)

    Adriani, Paul M.; Mao, Erwang

    2013-09-01

    Novel aggregated total internal reflection (ATIR) concentrator photovoltaic module design comprises 2-D shaped primary and secondary optics that effectively combine optical efficiency, low profile, convenient range of acceptance angles, reliability, and manufacturability. This novel optical design builds upon previous investigations by improving the shapes of primary and secondary optics to enable improved long-term reliability and manufacturability. This low profile, low concentration (5x to 10x) design fits well with one-axis trackers that are often used for flat plate crystalline silicon photovoltaic modules in large scale ground mount installations. Standard mounting points, materials, and procedures apply without changes from flat plate modules.

  14. Towards hybrid heterojunction silicon solar cells with organic charge carrier selective contacts

    OpenAIRE

    Jäckle, Sara Lisa

    2017-01-01

    Photovoltaic is an essential part of the needed global transition towards renewable energies. Even though many materials have good absorption and energy conversion properties, the market is dominated by technologies based on crystalline silicon. Silicon has the advantage of being neither toxic nor rare on earth and it is very well investigated due to its extensive use in microelectronics. The best power conversion efficiencies of silicon solar cells and modules are achieved by sophisticated d...

  15. Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

    Science.gov (United States)

    Yang, Jie

    2015-01-01

    Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

  16. Silicon pore optics for future x-ray telescopes

    DEFF Research Database (Denmark)

    Wille, Eric; Bavdaz, Marcos; Wallace, Kotska

    2017-01-01

    arcsec or better. These specifications can only be achieved with a novel technology like Silicon Pore Optics, which is being developed by ESA together with a consortium of European industry. Silicon Pore Optics are made of commercial Si wafers using process technology adapted from the semiconductor...... industry. We present the recent upgrades made to the manufacturing processes and equipment, ranging from the manufacture of single mirror plates towards complete focusing mirror modules mounted in flight configuration, and results from first vibration tests. The performance of the mirror modules is tested...

  17. Fabrication of the GLAST Silicon Tracker Readout Electronics

    Energy Technology Data Exchange (ETDEWEB)

    Baldini, Luca; Brez, Alessandro; Himel, Thomas; Johnson, R.P.; Latronico, Luca; Minuti, Massimo; Nelson, David; Sadrozinski, H.F.-W.; Sgro, Carmelo; Spandre, Gloria; Sugizaki, Mutsumi; Tajima, Hiro; Cohen Tanugi, Johann; Young, Charles; Ziegler, Marcus; /Pisa U. /INFN, Pisa /SLAC /UC, Santa Cruz

    2006-03-03

    A unique electronics system has been built and tested for reading signals from the silicon-strip detectors of the Gamma-ray Large Area Space Telescope mission. The system amplifies and processes signals from 884,736 36-cm long silicon strips in a 4 x 4 array of tower modules. An aggressive mechanical design fits the readout electronics in narrow spaces between the tower modules, to minimize dead area. This design and the resulting departures from conventional electronics packaging led to several fabrication challenges and lessons learned. This paper describes the fabrication processes and how the problems peculiar to this design were overcome.

  18. Reusable split-aptamer-based biosensor for rapid detection of cocaine in serum by using an all-fiber evanescent wave optical biosensing platform.

    Science.gov (United States)

    Tang, Yunfei; Long, Feng; Gu, Chunmei; Wang, Cheng; Han, Shitong; He, Miao

    2016-08-24

    A rapid, facile, and sensitive assay of cocaine in biological fluids is important to prevent illegal abuse of drugs. A two-step structure-switching aptasensor has been developed for cocaine detection based on evanescent wave optical biosensing platform. In the proposed biosensing platform, two tailored aptamer probes were used to construct the molecular structure switching. In the existence of cocaine, two fragments of cocaine aptamer formed a three-way junction quickly, and the fluorophore group of one fragment was effectively quenched by the quencher group of the other one. The tail of the three-way junction hybridized with the cDNA sequences immobilized on the optical fiber biosensor. Fluorescence was excited by evanescent wave, and the fluorescence signal was proportional to cocaine concentration. Cocaine was detected in 450 s (300 s for incubation and 150 s for detection and regeneration) with a limit of detection (LOD) of 165.2 nM. The proposed aptasensor was evaluated in human serum samples, and it exhibited good recovery, precision, and accuracy without complicated sample pretreatments. Copyright © 2016 Elsevier B.V. All rights reserved.

  19. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  20. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  1. Enhanced transmission of terahertz radiation through a periodically modulated slab of layered superconductor

    International Nuclear Information System (INIS)

    Kadygrob, D V; Slipchenko, T M; Yampol'skii, V A; Makarov, N M; Pérez-Rodríguez, F

    2013-01-01

    We predict the enhanced transparency of a modulated slab of layered superconductor for terahertz radiation due to the diffraction of an incident wave and the resonance excitation of eigenmodes. The electromagnetic field is transferred from the irradiated side of the slab to the other by excited waveguide modes (WGMs) which do not decay in layered superconductors, in contrast to metals, where the enhanced light transmission is caused by the excitation of evanescent surface waves. We show that a series of resonance peaks can be observed in the dependence of transmittance on the incidence angle when the dispersion curve of the diffracted wave crosses successive dispersion curves for the WGMs. (paper)

  2. Energy modulation of nonrelativistic electrons with a CO2 laser using a metal microslit

    OpenAIRE

    Jongsuck, Bae; Ryo, Ishikawa; Sumio, Okuyama; Takashi, Miyajima; Taiji, Akizuki; Tatsuya, Okamoto; Koji, Mizuno

    2000-01-01

    A metal microslit has been used as an interaction circuit between a CO2 laser beam and nonrelativistic free electrons. Evanescent waves which are induced on the slit by illumination of the laser light modulate the energy of electrons passing close to the surface of the slit. The electron-energy change of more than ±5 eV for the 80 keV electron beam has been observed using the 7 kW laser beam at the wavelength of 10.6 μm.

  3. Energy modulation of nonrelativistic electrons with a CO2 laser using a metal microslit

    Science.gov (United States)

    Bae, Jongsuck; Ishikawa, Ryo; Okuyama, Sumio; Miyajima, Takashi; Akizuki, Taiji; Okamoto, Tatsuya; Mizuno, Koji

    2000-04-01

    A metal microslit has been used as an interaction circuit between a CO2 laser beam and nonrelativistic free electrons. Evanescent waves which are induced on the slit by illumination of the laser light modulate the energy of electrons passing close to the surface of the slit. The electron-energy change of more than ±5 eV for the 80 keV electron beam has been observed using the 7 kW laser beam at the wavelength of 10.6 μm.

  4. Control and data acquisition electronics for the CDF Silicon Vertex Detector

    Energy Technology Data Exchange (ETDEWEB)

    Turner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

    1991-11-01

    A control and data acquisition system has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules. 11 refs., 6 figs., 3 tabs.

  5. Control and data acquisition electronics for the CDF silicon vertex detector

    International Nuclear Information System (INIS)

    urner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

    1992-01-01

    This paper reports on a control and data acquisition system that has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules

  6. Control and data acquisition electronics for the CDF Silicon Vertex Detector

    International Nuclear Information System (INIS)

    Turner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

    1991-11-01

    A control and data acquisition system has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules. 11 refs., 6 figs., 3 tabs

  7. Strong quantum-confined stark effect in germanium quantum-well structures on silicon

    International Nuclear Information System (INIS)

    Kuo, Y.; Lee, Y. K.; Gei, Y.; Ren, S; Roth, J. E.; Miller, D. A.; Harris, J. S.

    2006-01-01

    Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such component with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimeters) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger Quantum-Confined Stark Effect (QCSE) mechanism, which allows modulator structures with only micrometers of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor, such semiconductors often display much weak optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture. (author)

  8. Study of position resolution and electron-hadron separation of electromagnetic calorimeter with a silicon structure

    International Nuclear Information System (INIS)

    Gorodnichev, V.B.; Kachanov, V.A.; Khodyrev, V.Yu.; Kurchaninov, L.L.; Rykali, V.V.; Solovianov, V.L.; Ukhalov, M.N.

    1993-01-01

    The maximum shower silicon strip detectors embedded in a module of sandwich-type electromagnetic calorimeter have been tested. The position resolution at different depths of the silicon structure has been measured. The results on electron-hadron separation obtained as a byproduct in this study are presented, and possibility of their improvement is discussed. 8 refs., 10 figs., 1 tab

  9. A CMOS silicon spin qubit

    Science.gov (United States)

    Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

    2016-11-01

    Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

  10. CMS Silicon Strip Tracker Performance

    CERN Document Server

    Agram, Jean-Laurent

    2012-01-01

    The CMS Silicon Strip Tracker (SST), consisting of 9.6 million readout channels from 15148 modules and covering an area of 198 square meters, needs to be precisely calibrated in order to correctly reconstruct the events recorded. Calibration constants are derived from different workflows, from promptly reconstructed events with particles as well as from commissioning events gathered just before the acquisition of physics runs. The performance of the SST has been carefully studied since the beginning of data taking: the noise of the detector, data integrity, signal-over-noise ratio, hit reconstruction efficiency and resolution have been all investigated with time and for different conditions. In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.

  11. Extreme electronic bandgap modification in laser-crystallized silicon optical fibres

    Czech Academy of Sciences Publication Activity Database

    Healy, N.; Mailis, S.; Bulgakova, Nadezhda M.; Sazio, P.J.A.; Day, T.D.; Sparks, J.R.; Cheng, H.Y.; Badding, J.V.; Peacock, A.C.

    2014-01-01

    Roč. 13, č. 12 (2014), s. 1122-1127 ISSN 1476-1122 Institutional support: RVO:68378271 Keywords : strained silicon * modulation * generation Subject RIV: BH - Optics, Masers, Lasers Impact factor: 36.503, year: 2014

  12. Process for making silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  13. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  14. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  15. Determination of W boson helicity fractions in top quark decays in p anti-p collisions at CDF Run II and production of endcap modules for the ATLAS Silicon Tracker

    International Nuclear Information System (INIS)

    Moed, Shulamit; Geneva U

    2007-01-01

    The thesis presented here includes two parts. The first part discusses the production of endcap modules for the ATLAS SemiConductor Tracker at the University of Geneva. The ATLAS experiment is one of the two multi-purpose experiments being built at the LHC at CERN. The University of Geneva invested extensive efforts to create an excellent and efficient module production site, in which 655 endcap outer modules were constructed. The complexity and extreme requirements for 10 years of LHC operation with a high resolution, high efficiency, low noise tracking system resulted in an extremely careful, time consuming production and quality assurance of every single module. At design luminosity about 1000 particles will pass through the tracking system each 25 ns. In addition to requiring fast tracking techniques, the high particle flux causes significant radiation damage. Therefore, modules have to be constructed within tight and accurate mechanical and electrical specification. A description of the ATLAS experiment and the ATLAS Semiconductor tracker is presented, followed by a detailed overview of the module production at the University of Geneva. My personal contribution to the endcap module production at the University of Geneva was taking part, together with other physicists, in selecting components to be assembled to a module, including hybrid reception tests, measuring the I-V curve of the sensors and the modules at different stages of the production, thermal cycling the modules and performing electrical readout tests as an initial quality assurance of the modules before they were shipped to CERN. An elaborated description of all of these activities is given in this thesis. At the beginning of the production period the author developed a statistics package which enabled us to monitor the rate and quality of the module production. This package was then used widely by the ATLAS SCT institutes that built endcap modules of any type, and kept being improved and updated

  16. EDITORIAL: Special issue on silicon photonics

    Science.gov (United States)

    Reed, Graham; Paniccia, Mario; Wada, Kazumi; Mashanovich, Goran

    2008-06-01

    The technology now known as silicon photonics can be traced back to the pioneering work of Soref in the mid-1980s (see, for example, Soref R A and Lorenzo J P 1985 Electron. Lett. 21 953). However, the nature of the research conducted today, whilst it builds upon that early work, is unrecognizable in terms of technology metrics such as device efficiency, device data rate and device dimensions, and even in targeted applications areas. Today silicon photonics is still evolving, and is enjoying a period of unprecedented attention in terms of research focus. This has resulted in orders-of-magnitude improvement in device performance over the last few years to levels many thought were impossible. However, despite the existence of the research field for more than two decades, silicon is still regarded as a 'new' optical material, one that is being manipulated and modified to satisfy the requirements of a range of applications. This is somewhat ironic since silicon is one of the best known and most thoroughly studied materials, thanks to the electronics industry that has made silicon its material of choice. The principal reasons for the lack of study of this 'late developer' are that (i) silicon is an indirect bandgap material and (ii) it does not exhibit a linear electro-optic (Pockels) effect. The former condition means that it is difficult to make a laser in silicon based on the intrinsic performance of the material, and consequently, in recent years, researchers have attempted to modify the material to artificially engineer the conditions for lasing to be viable (see, for example, the review text, Jalali B et al 2008 Silicon Lasers in Silicon Photonics: The State of the Art ed G T Reed (New York: Wiley)). The latter condition means that optical modulators are intrinsically less efficient in silicon than in some other materials, particularly when targeting the popular telecommunications wavelengths around 1.55 μm. Therefore researchers have sought alternative

  17. Silicon micromachined vibrating gyroscopes

    Science.gov (United States)

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  18. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  19. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  20. Silicon integrated circuit process

    International Nuclear Information System (INIS)

    Lee, Jong Duck

    1985-12-01

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  1. Silicon integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Duck

    1985-12-15

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  2. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  3. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  4. Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures

    KAUST Repository

    Mughal, Asad Jahangir; El Demellawi, Jehad K.; Chaieb, Saharoui

    2014-01-01

    reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size

  5. 160 Gbit/s optical packet switching using a silicon chip

    DEFF Research Database (Denmark)

    Hu, Hao; Ji, Hua; Galili, Michael

    2012-01-01

    We have successfully demonstrated 160 Gbit/s all-optical packet switching based on cross-phase modulation using a silicon chip. Error free performance is achieved for the 4-to-1 switched 160 Gbit/s packet.......We have successfully demonstrated 160 Gbit/s all-optical packet switching based on cross-phase modulation using a silicon chip. Error free performance is achieved for the 4-to-1 switched 160 Gbit/s packet....

  6. Electrical tests of silicon detector modules for the ATLAS experiment and a study of the discovery potential of the $t\\overline{t}H, H \\to W^{+}W^{-}$ process

    CERN Document Server

    Ludwig, Inga

    2011-01-01

    The first part of this thesis was a contribution to the construction of the ATLAS Semiconductor Tracking detector (SCT). About 200 SCT endcap modules were assembled at the University of Freiburg. Before installation in the experiment, each module was subject to thorough testing in order to ensure their functionality within the ATLAS specifications. A large part of these tests concerned the electrical functionality of the readout electronics and the bias current behaviour of the sensors. The responsibility for the electrical characterization of the Freiburg modules was part of this thesis. To be suited for the analysis of physics processes, the signals measured in the detector need to be transferred into particle four-momenta, requiring the reconstruction and identification of different particle types. This thesis contributes to the physics object identification by a study of methods to separate isolated electrons from real electron background produced in the decays of heavy quarks. A standard set of four disc...

  7. Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals.

    Science.gov (United States)

    Diroll, Benjamin T; Schramke, Katelyn S; Guo, Peijun; Kortshagen, Uwe R; Schaller, Richard D

    2017-10-11

    Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows for selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a subpicosecond change of the dielectric function, resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27%, and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates subpicosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting the modulation of transmittance at telecommunications wavelengths. The results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.

  8. Intelligent Front-end Electronics for Silicon photodetectors (IFES)

    Energy Technology Data Exchange (ETDEWEB)

    Sauerzopf, Clemens, E-mail: clemens.sauerzopf@oeaw.ac.at; Gruber, Lukas; Suzuki, Ken; Zmeskal, Johann; Widmann, Eberhard

    2016-05-21

    While high channel density can be easily achieved for big experiments using custom made microchips, providing something similar for small and medium size experiments imposes a challenge. Within this work we describe a novel and cost effective solution to operate silicon photodetectors such as silicon photo multipliers (SiPM). The IFES modules provide the bias voltage for the detectors, a leading edge discriminator featuring time over threshold and a differential amplifier, all on one printed circuit board. We demonstrate under realistic conditions that the module is usable for high resolution timing measurements exploiting both charge and time information. Furthermore we show that the modules can be easily used in larger detector arrays. All in all this confirms that the IFES modules are a viable option for a broad range of experiments if cost-effectiveness and small form factor are required.

  9. Intelligent Front-end Electronics for Silicon photodetectors (IFES)

    Science.gov (United States)

    Sauerzopf, Clemens; Gruber, Lukas; Suzuki, Ken; Zmeskal, Johann; Widmann, Eberhard

    2016-05-01

    While high channel density can be easily achieved for big experiments using custom made microchips, providing something similar for small and medium size experiments imposes a challenge. Within this work we describe a novel and cost effective solution to operate silicon photodetectors such as silicon photo multipliers (SiPM). The IFES modules provide the bias voltage for the detectors, a leading edge discriminator featuring time over threshold and a differential amplifier, all on one printed circuit board. We demonstrate under realistic conditions that the module is usable for high resolution timing measurements exploiting both charge and time information. Furthermore we show that the modules can be easily used in larger detector arrays. All in all this confirms that the IFES modules are a viable option for a broad range of experiments if cost-effectiveness and small form factor are required.

  10. Joining elements of silicon carbide

    International Nuclear Information System (INIS)

    Olson, B.A.

    1979-01-01

    A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

  11. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  12. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  13. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  14. Silicon microfabricated beam expander

    International Nuclear Information System (INIS)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-01-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

  15. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  16. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  17. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  18. Experience with parallel optical link for the CDF silicon detector

    International Nuclear Information System (INIS)

    Hou, S.

    2003-01-01

    The Dense Optical Interface Module (DOIM) is a byte-wide optical link developed for the Run II upgrade of the CDF silicon tracking system [1]. The module consists of a transmitter with a laser-diode array for conversion of digitized detector signals to light outputs, a 22 m optical fiber ribbon cable for light transmission, and a receiver converting the light pulses back to electrical signals. We report on the design feature, characteristics, and radiation tolerance

  19. The New Silicon Strip Detectors for the CMS Tracker Upgrade

    CERN Document Server

    Dragicevic, Marko

    2010-01-01

    The first introductory part of the thesis describes the concept of the CMS experiment. The tasks of the various detector systems and their technical implementations in CMS are explained. To facilitate the understanding of the basic principles of silicon strip sensors, the subsequent chapter discusses the fundamentals in semiconductor technology, with particular emphasis on silicon. The necessary process steps to manufacture strip sensors in a so-called planar process are described in detail. Furthermore, the effects of irradiation on silicon strip sensors are discussed. To conclude the introductory part of the thesis, the design of the silicon strip sensors of the CMS Tracker are described in detail. The choice of the substrate material and the complex geometry of the sensors are reviewed and the quality assurance procedures for the production of the sensors are presented. Furthermore the design of the detector modules are described. The main part of this thesis starts with a discussion on the demands on the ...

  20. Silicon microspheres for near-IR communication applications

    International Nuclear Information System (INIS)

    Serpengüzel, Ali; Demir, Abdullah

    2008-01-01

    We have performed transverse electric and transverse magnetic polarized elastic light scattering calculations at 90° and 0° in the o-band at 1.3 µm for a 15 µm radius silicon microsphere with a refractive index of 3.5. The quality factors are on the order of 10 7 and the mode/channel spacing is 7 nm, which correlate well with the refractive index and the optical size of the microsphere. The 90° elastic light scattering can be used to monitor a dropped channel (drop port), whereas the 0° elastic scattering can be used to monitor the transmission channel (through port). The optical resonances of the silicon microspheres provide the necessary narrow linewidths that are needed for high-resolution optical communication applications. Potential telecommunication applications include filters, modulators, switches, wavelength converters, detectors, amplifiers and light sources. Silicon microspheres show promise as potential building blocks for silicon-based electrophotonic integration