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Sample records for silicon double layer

  1. Silicon epitaxy on textured double layer porous silicon by LPCVD

    International Nuclear Information System (INIS)

    Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

    2010-01-01

    Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

  2. Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

    International Nuclear Information System (INIS)

    Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

    2012-01-01

    In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

  3. Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures

    Energy Technology Data Exchange (ETDEWEB)

    Bolotov, V. V.; Knyazev, E. V.; Ponomareva, I. V.; Kan, V. E., E-mail: kan@obisp.oscsbras.ru; Davletkildeev, N. A.; Ivlev, K. E.; Roslikov, V. E. [Russian Academy of Sciences, Omsk Scientific Center, Siberian Branch (Russian Federation)

    2017-01-15

    The oxidation of mesoporous silicon in a double-layer “macroporous silicon–mesoporous silicon” structure is studied. The morphology and dielectric properties of the buried insulating layer are investigated using electron microscopy, ellipsometry, and electrical measurements. Specific defects (so-called spikes) are revealed between the oxidized macropore walls in macroporous silicon and the oxidation crossing fronts in mesoporous silicon. It is found that, at an initial porosity of mesoporous silicon of 60%, three-stage thermal oxidation leads to the formation of buried silicon-dioxide layers with an electric-field breakdown strength of E{sub br} ~ 10{sup 4}–10{sup 5} V/cm. Multilayered “porous silicon-on-insulator” structures are shown to be promising for integrated chemical micro- and nanosensors.

  4. Al-Si alloy point contact formation and rear surface passivation for silicon solar cells using double layer porous silicon

    International Nuclear Information System (INIS)

    Moumni, Besma; Ben Jaballah, Abdelkader; Bessais, Brahim

    2012-01-01

    Lowering the rear surface recombination velocities by a dielectric layer has fascinating advantages compared with the standard fully covered Al back-contact silicon solar cells. In this work the passivation effect by double layer porous silicon (PS) (wide band gap) and the formation of Al-Si alloy in narrow p-type Si point contact areas for rear passivated solar cells are analysed. As revealed by Fourier transform infrared spectroscopy, we found that a thin passivating aluminum oxide (Al 2 O 3 ) layer is formed. Scanning electron microscopy analysis performed in cross sections shows that with bilayer PS, liquid Al penetrates into the openings, alloying with the Si substrate at depth and decreasing the contact resistivity. At the solar cell level, the reduction in the contact area and resistivity leads to a minimization of the fill factor losses.

  5. Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor.

    Science.gov (United States)

    Gaboriau, Dorian; Boniface, Maxime; Valero, Anthony; Aldakov, Dmitry; Brousse, Thierry; Gentile, Pascal; Sadki, Said

    2017-04-19

    Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 10 6 charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage and excellent cycle life of dielectric capacitors, while retaining energy and power densities close to the ones displayed by supercapacitors.

  6. Real-time monitoring of enzyme activity in a mesoporous silicon double layer

    Science.gov (United States)

    Orosco, Manuel M.; Pacholski, Claudia; Sailor, Michael J.

    2009-04-01

    The activity of certain proteolytic enzymes is often an indicator of disease states such as cancer, stroke and neurodegeneracy, so there is a need for rapid assays that can characterize the kinetics and substrate specificity of enzymatic reactions. Nanostructured membranes can efficiently separate biomolecules, but coupling a sensitive detection method to such a membrane remains difficult. Here, we demonstrate a single mesoporous nanoreactor that can isolate and quantify in real time the reaction products of proteases. The reactor consists of two layers of porous films electrochemically prepared from crystalline silicon. The upper layer, with large pore sizes (~100 nm in diameter), traps the protease and acts as the reactor. The lower layer, with smaller pore sizes (~6 nm), excludes the proteases and other large proteins and captures the reaction products. Infiltration of the digested fragments into the lower layer produces a measurable change in optical reflectivity, and this allows label-free quantification of enzyme kinetics in real time within a volume of ~5 nl.

  7. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  8. The fabrication of a double-layer atom chip with through silicon vias for an ultra-high-vacuum cell

    International Nuclear Information System (INIS)

    Chuang, Ho-Chiao; Lin, Yun-Siang; Lin, Yu-Hsin; Huang, Chi-Sheng

    2014-01-01

    This study presents a double-layer atom chip that provides users with increased diversity in the design of the wire patterns and flexibility in the design of the magnetic field. It is more convenient for use in atomic physics experiments. A negative photoresist, SU-8, was used as the insulating layer between the upper and bottom copper wires. The electrical measurement results show that the upper and bottom wires with a width of 100 µm can sustain a 6 A current without burnout. Another focus of this study is the double-layer atom chips integrated with the through silicon via (TSV) technique, and anodically bonded to a Pyrex glass cell, which makes it a desired vacuum chamber for atomic physics experiments. Thus, the bonded glass cell not only significantly reduces the overall size of the ultra-high-vacuum (UHV) chamber but also conducts the high current from the backside to the front side of the atom chip via the TSV under UHV (9.5 × 10 −10  Torr). The TSVs with a diameter of 70 µm were etched through by the inductively coupled plasma ion etching and filled by the bottom-up copper electroplating method. During the anodic bonding process, the electroplated copper wires and TSVs on atom chips also need to pass the examination of the required bonding temperature of 250 °C, under an applied voltage of 1000 V. Finally, the UHV test of the double-layer atom chips with TSVs at room temperature can be reached at 9.5 × 10 −10  Torr, thus satisfying the requirements of atomic physics experiments under an UHV environment. (paper)

  9. Electrical Double Layer-Induced Ion Surface Accumulation for Ultrasensitive Refractive Index Sensing with Nanostructured Porous Silicon Interferometers.

    Science.gov (United States)

    Mariani, Stefano; Strambini, Lucanos Marsilio; Barillaro, Giuseppe

    2018-03-23

    Herein, we provide the first experimental evidence on the use of electrical double layer (EDL)-induced accumulation of charged ions (using both Na + and K + ions in water as the model) onto a negatively charged nanostructured surface (e.g., thermally growth SiO 2 )-Ion Surface Accumulation, ISA-as a means of improving performance of nanostructured porous silicon (PSi) interferometers for optical refractometric applications. Nanostructured PSi interferometers are very promising optical platforms for refractive index sensing due to PSi huge specific surface (hundreds of m 2 per gram) and low preparation cost (less than $0.01 per 8 in. silicon wafer), though they have shown poor resolution ( R) and detection limit (DL) (on the order of 10 -4 -10 -5 RIU) compared to other plasmonic and photonic platforms ( R and DL on the order of 10 -7 -10 -8 RIU). This can be ascribed to both low sensitivity and high noise floor of PSi interferometers when bulk refractive index variation of the solution infiltrating the nanopores either approaches or is below 10 -4 RIU. Electrical double layer-induced ion surface accumulation (EDL-ISA) on oxidized PSi interferometers allows the interferometer output signal (spectral interferogram) to be impressively amplified at bulk refractive index variation below 10 -4 RIU, increasing, in turn, sensitivity up to 2 orders of magnitude and allowing reliable measurement of refractive index variations to be carried out with both DL and R of 10 -7 RIU. This represents a 250-fold-improvement (at least) with respect to the state-of-the-art literature on PSi refractometers and pushes PSi interferometer performance to that of state-of-the-art ultrasensitive photonics/plasmonics refractive index platforms.

  10. Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

    Directory of Open Access Journals (Sweden)

    Minghua Li

    2013-01-01

    Full Text Available We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC on acid textures to fabricate colored multicrystalline silicon (mc-Si solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2 thickness for the case of SiO2/SiNx:H (DARC with fixed SiNx:H (refractive index n=2.1 at 633 nm, and thickness = 80 nm. The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2 to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam evaporation to deposit a layer of SiO2 over the standard SiNx:H for 156×156 mm2 mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm and I-V measurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

  11. Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

    International Nuclear Information System (INIS)

    Yue, Huang; Hong-Yan, Gou; Qing-Qing, Sun; Shi-Jin, Ding; Wei, Zhang; Shi-Li, Zhang

    2009-01-01

    We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO 2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10 11 cm −2 and a diameter range of 5–8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO 2 dielectric exhibits a large C – V hysteresis window of 11.9V for ±11 V gate voltage sweeps at 1 MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1 ms, a leakage current density of 2.9 × 10 −8 A/cm −2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed

  12. Double layers in space

    International Nuclear Information System (INIS)

    Carlqvist, P.

    1982-07-01

    For more than a decade it has been realised that electrostatic double layers are likely to occur in space. We briefly discuss the theoretical background of such double layers. Most of the paper is devoted to an account of the observational evidence for double layers in the ionosphere and magnetosphere of the Earth. Several different experiments are reviewed including rocket and satellite measurements and ground based observations. It is concluded that the observational evidence for double layers in space is very strong. The experimental results indicate that double layers with widely different properties may exist in space. (Author)

  13. Double layers in space

    International Nuclear Information System (INIS)

    Carlqvist, P.

    1982-01-01

    For more than a decade it has been realised that electrostatic double layers are likely to occur in space. The author briefly discusses the theoretical background of such double layers. Most of the paper is devoted to an account of the observational evidence for double layers in the ionosphere and magnetosphere of the Earth. Several different experiments are reviewed including rocket and satellite measurements and ground based observations. It is concluded that the observational evidence for double layers in space is very strong. The experimental results indicate that double layers with widely different properties may exist in space. (Auth.)

  14. Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

    International Nuclear Information System (INIS)

    Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

    2009-01-01

    Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

  15. Toward the Physical Basis of Complex Systems: Dielectric Analysis of Porous Silicon Nanochannels in the Electrical Double Layer Length Range

    Directory of Open Access Journals (Sweden)

    Radu Mircea Ciuceanu

    2011-01-01

    Full Text Available Dielectric analysis (DEA shows changes in the properties of
    a materials as a response to the application on it of a time dependent electric field. Dielectric measurements are extremely sensitive to small changes in materials properties, that molecular relaxation, dipole changes, local motions that involve the reorientation of dipoles, and so can be observed by DEA. Electrical double layer (EDL, consists in a shielding layer that is naturally created within the liquid near a charged surface. The thickness of the EDL is given by the characteristic Debye length what grows less with the ionic strength defined by half summ products of concentration with square of charge for all solvent
    ions (co-ions, counterions, charged molecules. The typical length scale for the Debye length is on the order of 1 nm, depending on the ionic contents in the solvent; thus, the EDL becomes significant for nano-capillaries that nanochannels. The electrokinetic e®ects in the nanochannels depend essentialy on the distribution of charged species in EDL, described by the Poisson-Boltzmann equation those solutions require the solvent dielectric permittivity. In this work we propose a model for solvent low-frequency permittivity and a DEA profile taking into account both the porous silicon electrode and aqueous solvent properties in the Debye length range.

  16. Formation of double layers

    International Nuclear Information System (INIS)

    Leung, P.; Wong, A.Y.; Quon, B.H.

    1981-01-01

    Experiments on both stationary and propagating double layers and a related analytical model are described. Stationary double layers were produced in a multiple plasma device, in which an electron drift current was present. An investigation of the plasma parameters for the stable double layer condition is described. The particle distribution in the stable double layer establishes a potential profile, which creates electron and ion beams that excite plasma instabilities. The measured characteristics of the instabilities are consistent with the existence of the double layer. Propagating double layers are formed when the initial electron drift current is large. Ths slopes of the transition region increase as they propagate. A physical model for the formation of a double layer in the experimental device is described. This model explains the formation of the low potential region on the basis of the space charge. This space charge is created by the electron drift current. The model also accounts for the role of ions in double layer formation and explains the formation of moving double layers. (Auth.)

  17. Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

    International Nuclear Information System (INIS)

    Jiao Bao-Chen; Zhang Xiao-Dan; Wei Chang-Chun; Sun Jian; Ni Jian; Zhao Ying

    2011-01-01

    Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10 −3 Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10 −3 Ω·cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. A double layer review

    International Nuclear Information System (INIS)

    Block, L.P.

    1977-06-01

    A review of the main results on electrostatic double layers (sometimes called space charge layers or sheaths) obtained from theory, and laboratory and space experiments up to the spring of 1977 is given. By means of barium jets and satellite probes, double layers have now been found at the altitudes, earlier predicted theoretically. The general potential distribution above the auroral zone, suggested by inverted V-events and electric field reversals, is corroborated. (author)

  19. Intrathoracic esophageal replacement in the dog with the use of an artificial esophagus composed of a collagen sponge with a double-layered silicone tube.

    Science.gov (United States)

    Yamamoto, Y; Nakamura, T; Shimizu, Y; Matsumoto, K; Takimoto, Y; Kiyotani, T; Sekine, T; Ueda, H; Liu, Y; Tamura, N

    1999-08-01

    Intrathoracic esophageal replacement with an artificial esophagus is considered difficult. We attempted to replace the intrathoracic esophagus with an artificial esophagus composed of a collagen sponge with a double-layered silicone tube and examined the state of host tissue regeneration. A 5-cm long gap was created in the intrathoracic esophagus in 9 dogs and repaired by interposition of our prosthesis. The dogs were fed only by intravenous hyperalimentation for 28 days. The silicone tube was removed at 29 days after the operation, and oral feeding was reintroduced. One dog was put to death at each of the following times: 1, 2, 3, 3, 6, 12, and 24 months after the operation. One dog is still surviving without problems after more than 26 months. One dog died of malnutrition at 10 months. In all dogs, the host regenerated tissue had replaced the resulting gap at the time of silicone tube removal. The mucosa had fully regenerated within 3 months and the glands within 12 months. The process of stenosis and shrinkage was complete within 3 months and did not advance thereafter. The lamina muscularis mucosae were observed as islets of smooth muscle within 12 months. Although the skeletal muscle regenerated close to the anastomoses, it did not extend to the middle of the regenerated esophagus even after 24 months. Use of a collagen sponge with a double-layered silicone tube was shown to be feasible even in the thorax and to allow the regenerated host tissue, consisting of the mucosa, glands, and lamina muscularis mucosae, to replace the esophageal gap.

  20. Layered double hydroxides

    DEFF Research Database (Denmark)

    López Rayo, Sandra; Imran, Ahmad; Hansen, Hans Chr. Bruun

    2017-01-01

    A novel zinc (Zn) fertilizer concept based on Zn doped layered double hydroxides (Zn-doped Mg-Fe-LDHs) has been investigated. Zn-doped Mg-Fe-LDHs were synthetized, their chemical composition was analyzed and their nutrient release was studied in buffered solutions with different pH values. Uptake...

  1. Gravitational double layers

    International Nuclear Information System (INIS)

    Senovilla, José M M

    2014-01-01

    I analyze the properties of thin shells through which the scalar curvature R is discontinuous in gravity theories with Lagrangian F(R) = R − 2Λ + αR 2 on the bulk. These shells/domain walls are of a new kind because they possess, in addition to the standard energy–momentum tensor, an external energy flux vector, an external scalar pressure/tension and, most exotic of all, another energy–momentum contribution resembling classical dipole distributions on a shell: a double layer. I prove that all these contributions are necessary to make the entire energy–momentum tensor divergence-free. This is the first known occurrence of such a type of double layer in a gravity theory. I present explicit examples in constant-curvature five-dimensional bulks, with a brief study of their properties: new physical behaviors arise. (fast track communications)

  2. Urea biosensor based on Zn3Al-Urease layered double hydroxides nanohybrid coated on insulated silicon structures

    International Nuclear Information System (INIS)

    Barhoumi, H.; Maaref, A.; Rammah, M.; Martelet, C.; Jaffrezic, N.; Mousty, C.; Vial, S.; Forano, C.

    2006-01-01

    Urea biosensors for medical diagnostic monitoring were developed based on the immobilization of urease within layered double hydroxides (LDH). The urease-LDH material was obtained by a stepwise exchange reaction by urease of a Zn 3 Al-dodecyl sulphate (ZnAl-DS) colloidal suspension. XR diffraction and FTIR analysis show that this method gives rise to a Zn 3 Al-Urease LDH nanohybrid material with urease dispersion and textural properties. An aqueous suspension of this urease-LDH nanohybrid material was deposited on an insulated semiconductor (IS) structure. Biosensor responses to urea additions were obtained using capacitance (C vs. V) and impedance (Z vs. ω) measurements. An enhanced maximum limit of the dynamic range was observed in the case of the impedance measurements (110 mM) compared to (5.6 mM) the capacitive urea biosensor. The Michaelis-Menten constant was also calculated according to the Lineweaver-Burk plot. It was found that the K m value with immobilized enzymes was lower (K m = 0.67 mM) in comparison with free enzymes. This K m value obtained from the capacitance measurements indicates that the urea degradation is performed within any inhibition action on the IS/Zn 3 Al-Urease LDH electrode. A comparative study was carried out between these results and those obtained previously, using urease/ZnAl-Cl layered double hydroxides mixture coated on the pH-ISFET transducer

  3. Progress in MOSFET double-layer metalization

    Science.gov (United States)

    Gassaway, J. D.; Trotter, J. D.; Wade, T. E.

    1980-01-01

    Report describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).

  4. Layered double hydroxides

    DEFF Research Database (Denmark)

    López Rayo, Sandra; Imran, Ahmad; Hansen, Hans Chr. Bruun

    2017-01-01

    A novel zinc (Zn) fertilizer concept based on Zn doped layered double hydroxides (Zn-doped Mg-Fe-LDHs) has been investigated. Zn-doped Mg-Fe-LDHs were synthetized, their chemical composition was analyzed and their nutrient release was studied in buffered solutions with different pH values. Uptake...... equation showing maximum release at pH 5.2, reaching approximately 45% of the total Zn content. The Zn concentrations in the plants receiving the LDHs were between 2- and 9.5-fold higher than those in plants without Zn addition. A positive effect of the LDHs was also found in soil. This work documents...

  5. Layering and Ordering in Electrochemical Double Layers

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yihua [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States; Kawaguchi, Tomoya [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States; Pierce, Michael S. [Rochester Institute of Technology, School of Physics and Astronomy, Rochester, New York 14623, United States; Komanicky, Vladimir [Faculty of Science, Safarik University, 041 54 Kosice, Slovakia; You, Hoydoo [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States

    2018-02-26

    Electrochemical double layers (EDL) form at electrified interfaces. While Gouy-Chapman model describes moderately charged EDL, formation of Stern layers was predicted for highly charged EDL. Our results provide structural evidence for a Stern layer of cations, at potentials close to hydrogen evolution in alkali fluoride and chloride electrolytes. Layering was observed by x-ray crystal truncation rods and atomic-scale recoil responses of Pt(111) surface layers. Ordering in the layer is confirmed by glancing-incidence in-plane diffraction measurements.

  6. Double layers above the aurora

    International Nuclear Information System (INIS)

    Temerin, M.; Mozer, F.S.

    1987-01-01

    Two different kinds of double layers were found in association with auroral precipitation. One of these is the so-called electrostatic shock, which is oriented at an oblique angle to the magnetic field in such a way that the perpendicular electric field is much larger than the parallel electric field. This type of double layer is often found at the edges of regions of upflowing ion beams and the direction of the electric fields in the shock points toward the ion beam. The potential drop through the shock can be several kV and is comparable to the total potential needed to produce auroral acceleration. Instabilities associated with the shock may generate obliquely propagating Alfven waves, which may accelerate electrons to produce flickering auroras. The flickering aurora provides evidence that the electrostatic shock may have large temporal fluctuations. The other kind of double layer is the small-amplitude double layer found in regions of upward flowing in beams, often in association with electrostatic ion cyclotron waves. The parallel and perpendicular electric fields in these structures are comparable in magnitude. The associated potentials are a few eV. Since many such double layers are found in regions of upward flowing ion beams, the combined potential drop through a set of these double layers can be substantial

  7. Global effects of double layers

    International Nuclear Information System (INIS)

    Raad, M.A.

    1984-12-01

    Locally the formation of an electrostatic double layer in a current carrying plasma leads to a direct acceleration of particles which may penetrate far into the surrounding medium. The potential across the double layer, giving this acceleration, must be maintained by the external system and is a basic parameter for the local to global coupling. The double layer potential is associated with an electric field parallel to the magnetic field. In general this leads to a magnetohydrodynamic relaxation of the surrounding medium providing the influx of energy which is dissipated by the double layer. The double layer potential is limited as is the maximum possible rate of energy influx. If the global response of the external medium can be represented by an external circuit and if an equivalent circuit element can be found to represent the double layer, for example a negative resistance for intermediate time scales, it is possible to give a description of the dynamics and stability of the whole system. (Author)

  8. Epitaxial growth of silicon for layer transfer

    Science.gov (United States)

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  9. On the physics of relativistic double layers

    International Nuclear Information System (INIS)

    Carlqvist, P.

    1982-06-01

    A model of a strong, time-independent, and relativistic double layer is studied. Besides double layers having the electric field parallel to the current the model also describes a certain type of oblique double layers. The 'Langmuir condition' (ratio of ion current density to electron current density) as well as an expression for the potential drop of the double layer are derived. Furthermore, the distribution of charged particles, electric field, and potential within the double layer are clarified and discussed. It is found that the properties of relativistic double layers differ substantially from the properties of corresponding non-relativistic double layers. (Author)

  10. Method of forming buried oxide layers in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  11. Transition from single to multiple double layers

    International Nuclear Information System (INIS)

    Chan, C.; Hershkowitz, N.

    1982-01-01

    It is shown that laboratory double layers become multiple double layers when the ratio of Debye length to system length is decreased. This result exhibits characteristics described by boundary layer theory

  12. Integrated double-sided silicon microstrip detectors

    Directory of Open Access Journals (Sweden)

    Perevertailo V. L.

    2011-11-01

    Full Text Available The problems of design, technology and manufacturing double-sided silicon microstrip detectors using standard equipment production line in mass production of silicon integrated circuits are considered. The design of prototype high-energy particles detector for experiment ALICE (CERN is presented. The parameters of fabricated detectors are comparable with those of similar foreign detectors, but they are distinguished by lesser cost.

  13. Some theoretical aspects of electrostatic double layers

    International Nuclear Information System (INIS)

    Carlqvist, P.

    1978-11-01

    A review is presented of the main results of the theoretical work on electrostatic double layers. The general properties of double layers are first considered. Then the time-independent double layer is discussed. The discussion deals with the potential drop, the thickness, and some necessary criteria for the existence and stability of the layer. As a complement to the study of the timeindependent double layer a few remarks are also made upon the timedependent double layer. Finally the question of how double layers are formed and maintained is treated. Several possible formation mechanisms are considered. (author)

  14. Barrier layer arrangement for conductive layers on silicon substrates

    International Nuclear Information System (INIS)

    Hung, L.S.; Agostinelli, J.A.

    1990-01-01

    This patent describes a circuit element comprised of a silicon substrate and a conductive layer located on the substrate. It is characterized in that the conductive layer consists essentially of a rare earth alkaline earth copper oxide and a barrier layer triad is interposed between the silicon substrate and the conductive layer comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of a least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at lease one Group 4 heavy metal oxide

  15. Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1998-01-01

    Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

  16. Hopping absorption edge in silicon inversion layers

    International Nuclear Information System (INIS)

    Kostadinov, I.Z.

    1983-09-01

    The low frequency gap observed in the absorption spectrum of silicon inversion layers is related to the AC variable range hopping. The frequency dependence of the absorption coefficient is calculated. (author)

  17. The theory of double layers

    International Nuclear Information System (INIS)

    Schamel, H.

    1982-01-01

    Numerical and in some degree laboratory experiments suggest the existence of at least two different kinds of time-independent double layers: a strictly monotonic transition of the electrostatic potential and a transition accompanied by a negative spike at the low potential side (ion acoustic DL). An interpretation of both is presented in terms of analytic BGK modes. The first class of DLs commonly observed in voltage- or beam-driven plasmas needs for its existence beam-type distributions satisfying a Bohm criterion. The potential drop is at least of the order of Tsub(e), and stability arguments favour currents which satisfy the Langmuir condition. The second class found in current-driven plasma simulations is correlated with ion holes. This latter kind of nonlinear wave-solutions is linearly based on the slow ion-acoustic mode and exists due to a vortex-like distortion of the ion distribution in the thermal range. During the growth of an ion hole which is triggered by ion-acoustic fluctuations, the partial reflection of streaming electrons causes different plasma states on both sides of the potential dip and makes the ion hole asymmetric giving rise to an effective potential drop. This implies that the amplitude of this second type of double layers has an upper limit of 1-2 Tsub(e) and presumes a temperature ratio of Tsub(e)/Tsub(i) > or approximately 3 in coincidence with the numerical results. (Auth.)

  18. Formation and properties of porous silicon layers

    International Nuclear Information System (INIS)

    Vitanov, P.; Kamenova, M.; Dimova-Malinovska, D.

    1993-01-01

    Preparation, properties and application of porous silicon films are investigated. Porous silicon structures were formed by an electrochemical etching process resulting in selective dissolution of the silicon substrate. The silicon wafers used with a resistivity of 5-10Ω.cm were doped with B to concentrations 6x10 18 -1x10 19 Ω.cm -3 in the temperature region 950 o C-1050 o C. The density of each porous films was determined from the weight loss during the anodization and it depends on the surface resistivity of the Si wafer. The density decreases with decreasing of the surface resistivity. The surface of the porous silicon layers was studied by X-ray photoelectron spectroscopy which indicates the presence of SiF 4 . The kinetic dependence of the anode potential and the porous layer thickness on the time of anodization in a galvanostatic regime for the electrolytes with various HF concentration were studied. In order to compare the properties of the resulting porous layers and to establish the dependence of the porosity on the electrolyte, three types of electrolytes were used: concentrated HF, diluted HF:H 2 O=1:1 and ethanol-hydrofluoric solutions HF:C 2 H 5 OH:H 2 O=2:1:1. High quality uniform and reproducible layers were formed using aqueous-ethanol-hydrofluoric electrolyte. Both Kikuchi's line and ring patterns were observed by TEM. The porous silicon layer was single crystal with the same orientation as the substrate. The surface shows a polycrystalline structure only. The porous silicon layers exhibit visible photoluminescence (PL) at room temperature under 480 nm Ar + laser line excitation. The peak of PL was observed at about 730 nm with FWHM about 90 nm. Photodiodes was made with a W-porous silicon junction. The current voltage and capacity voltage characteristics were similar to those of an isotype heterojunction diode. (orig.)

  19. Double Layer Dynamics in a Collisionless Magnetoplasma

    DEFF Research Database (Denmark)

    Iizuka, S.; Michelsen, Poul; Juul Rasmussen, Jens

    and propagation of a double layer. The period of the oscillations is determined by the propagation length of the double layer. The current is limited during the propagation of the double layer by a growing negative potential barrier formed on the low potential tail. Similar phenomena appear when a potential......An experimental investigation of the dynamics of double layers is presented. The experiments are performed in a Q-machine plasma and the double layers are generated by applying a positive step potential to a cold collector plate terminating the plasma column. The double layer is created...... at the grounded plasma source just after the pulse is applied and it propagates towards the collector with a speed around the ion acoustic speed. When the collector is biased positively, large oscillations are obserced in the plasma current. These oscillations are found to be related to a recurring formation...

  20. Three Dimensional Double Layers in Magnetized Plasmas

    DEFF Research Database (Denmark)

    Jovanovic, D.; Lynov, Jens-Peter; Michelsen, Poul

    1982-01-01

    Experimental results are presented which demonstrate the formation of fully three dimensional double layers in a magnetized plasma. The measurements are performed in a magnetized stationary plasma column with radius 1.5 cm. Double layers are produced by introducing an electron beam with radius 0.......4 cm along the magnetic field from one end of the column. The voltage drop across the double layer is found to be determined by the energy of the incoming electron beam. In general we find that the width of the double layer along the external magnetic field is determined by plasma density and beam...

  1. Dynamical Aspects of Electrostatic Double Layers

    DEFF Research Database (Denmark)

    Raadu, M.A.; Juul Rasmussen, J.

    1988-01-01

    Electrostatic double layers have been proposed as an acceleration mechanism in solar flares and other astrophysical objects. They have been extensively studied in the laboratory and by means of computer simulations. The theory of steady-state double layers implies several existence criteria...

  2. Instability limits for spontaneous double layer formation

    International Nuclear Information System (INIS)

    Carr, J. Jr.; Galante, M. E.; McCarren, D.; Scime, E. E.; Sears, S.; VanDervort, R. W.; Magee, R. M.; Reynolds, E.

    2013-01-01

    We present time-resolved measurements that demonstrate that large amplitude electrostatic instabilities appear in pulsed, expanding helicon plasmas at the same time as particularly strong double layers appear in the expansion region. A significant cross-correlation between the electrostatic fluctuations and fluctuations in the number of ions accelerated by the double layer electric field is observed. No correlation is observed between the electrostatic fluctuations and ions that have not passed through the double layer. These measurements confirm that the simultaneous appearance of the electrostatic fluctuations and the double layer is not simple coincidence. In fact, the accelerated ion population is responsible for the growth of the instability. The double layer strength, and therefore, the velocity of the accelerated ions, is limited by the appearance of the electrostatic instability

  3. Electrical behavior of free-standing porous silicon layers

    International Nuclear Information System (INIS)

    Bazrafkan, I.; Dariani, R.S.

    2009-01-01

    The electrical behavior of porous silicon (PS) layers has been investigated on one side of p-type silicon with various anodization currents and electrolytes. The two contact I-V characteristic is assigned by the metal/porous silicon rectifying interface, whereas, by using the van der Pauw technique, a nonlinear dependence of the current vs voltage was found. By using Dimethylformamide (DMF) in electrolyte, regular structures and columns were formed and porosity increased. Our results showed that by using DMF, surface resistivity of PS samples increased and became double for free-standing porous silicon (FPS). The reason could be due to increasing surface area and adsorbing some more gas molecules. Activation energy of PS samples was also increased from 0.31 to 0.34 eV and became 0.35 eV for FPS. The changes induced by storage are attributed to the oxidation process of the internal surface of free-standing porous silicon layers.

  4. Double layers and circuits in astrophysics

    International Nuclear Information System (INIS)

    Alfven, H.

    1986-05-01

    As the rate of energy release in a double layer with voltage DeltaV is P corresponding to IDeltaV, a double layer must be treated part of a circuit which delivers the current I. As neither double layer nor circuit can be derived from magnetofluid models of a plasma, such models are useless for treating energy transfer by menas of double layers. They must be replaced by particle models and circuit theory. A simple circuit is suggested which is applied to the energizing of auroroal particles, to solar flares, and to intergalactic double radio sources. Application to the heliospheric current systems leads to the prediction of two double layers on the sun's axis which may give radiations detectable from earth. Double layers in space should be classified as a new type of celestial object (one example is the double radio sources). It is tentatively suggested in X-ray and gamma-ray bursts may be due to exploding double layers (although annihilation is an alternative energy source). A study of how a number of the most used textbooks in astrophysics treat important concepts like double layers, critical velocity, pinch effects and circuits is made. It is found that students using these textbooks remain essentially ignorant of even the existence of these, in spite of the fact that some of them have been well known for half a centry (e.g., double layers, Langmuir, 1929: pinch effect, Bennet, 1934). The conclusion is that astrophysics is too important to be left in the hands of the astrophysicist. Earth bound and space telescope data must be treated by scientists who are familiar with laboratory and magnetospheric physics and circuit theory, and of course with modern plasma theory. At least by volume the universe consists to more than 99 percent of plasma, and electromagnetic forces are 10/sup39/ time stronger than gravitation

  5. Simulation of plasma double-layer structures

    International Nuclear Information System (INIS)

    Borovsky, J.E.; Joyce, G.

    1982-01-01

    Electrostatic plasma double layers are numerically simulated by means of a magnetized 2 1/2-dimensional particle-in-cell method. The investigation of planar double layers indicates that these one-dimensional potential structures are susceptible to periodic disruption by instabilities in the low-potential plasmas. Only a slight increase in the double-layer thickness with an increase in its obliqueness to the magnetic field is observed. Weak magnetization results in the double-layer electric-field alignment of accelerated particles and strong magnetization results in their magnetic-field alignment. The numerial simulations of spatially periodic two-dimensional double layers also exhibit cyclical instability. A morphological invariance in two-dimensional double layers with respect to the degree of magnetization implies that the potential structures scale with Debye lengths rather than with gyroradii. Electron-beam excited electrostatic electron-cyclotron waves and (ion-beam driven) solitary waves are present in the plasmas adjacent to the double layers

  6. Stationary Double Layers in a Collisionless Magnetoplasma

    DEFF Research Database (Denmark)

    Noriyoshi, Sato; Mieno, Tetsu; Hatakeyama, Rikizo

    1983-01-01

    of the plate on the low-potential side, being accompanied with current limitation. This localized potential drop moves along the plasma column, but finally stops and results in the formation of the stationary double layer in the presence of sufficient plasma supply from the plate on the high-potential side.......Stationary double layers are generated in a magnetoplasma by applying potential differences between two heated plates on which the plasma is produced by surface ionization. By measuring the double-layer formation process, a localized potential drop is found to be formed initially in front...

  7. Atomic-layer deposition of silicon nitride

    CERN Document Server

    Yokoyama, S; Ooba, K

    1999-01-01

    Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

  8. Double layer dynamics in a collisionless magnetoplasma

    International Nuclear Information System (INIS)

    Iizuka, Satoru; Michelsen, P.; Rasmussen, J.J.; Schrittwieser, R.; Hatakeyama, Rikizo; Saeki, Koichi; Sato, Noriyoshi.

    1985-01-01

    Investigations of double layer dynamics are performed in a Q-machine plasma by applying a positive step potential to a cold end-plate collector. The double layer created at the grounded plasma source just after the pulse is applied propagates towards the collector with the plasma flow speed. Large oscillations occur in the plasma current which is related to a recurring formation and propagation of the double layer. The current is limited during the propagation by a growing negative potential dip formed on the low-potential tail. Similar phenomena appear on the low-potential tail of the stationary double layer formed by applying a potential difference between two plasma sources. (author)

  9. Double layer dynamics in a collisionless magnetoplasma

    DEFF Research Database (Denmark)

    Iizuka, S.; Michelsen, Poul; Juul Rasmussen, Jens

    1985-01-01

    Investigations of double layer dynamics are performed in a Q-machine plasma by applying a positive step potential to a cold end-plate collector. The double layer created at the grounded plasma source just after the pulse is applied propagates towards the collector with the plasma flow speed. Large...... oscillations occur in the plasma current which is related to a recurring formation and propagation of the double layer. The current is limited during the propagation by a growing negative potential dip formed on the low-potential tail. Similar phenomena appear on the low-potential tail of the stationary double...... layer formed by applying a potential difference between two plasma sources...

  10. Numerical simulations on ion acoustic double layers

    International Nuclear Information System (INIS)

    Sato, T.; Okuda, H.

    1980-07-01

    A comprehensive numerical study of ion acoustic double layers has been performed for both periodic as well as for nonperiodic systems by means of one-dimensional particle simulations. For a nonperiodic system, an external battery and a resistance are used to model the magnetospheric convection potential and the ionospheric Pedersen resistance. It is found that the number of double layers and the associated potential buildup across the system increases with the system length

  11. Double-walled silicon nanotubes: an ab initio investigation

    Science.gov (United States)

    Lima, Matheus P.

    2018-02-01

    The synthesis of silicon nanotubes realized in the last decade demonstrates multi-walled tubular structures consisting of Si atoms in {{sp}}2 and the {{sp}}3 hybridizations. However, most of the theoretical models were elaborated taking as the starting point {{sp}}2 structures analogous to carbon nanotubes. These structures are unfavorable due to the natural tendency of the Si atoms to undergo {{sp}}3. In this work, through ab initio simulations based on density functional theory, we investigated double-walled silicon nanotubes proposing layered tubes possessing most of the Si atoms in an {{sp}}3 hybridization, and with few {{sp}}2 atoms localized at the outer wall. The lowest-energy structures have metallic behavior. Furthermore, the possibility to tune the band structure with the application of a strain was demonstrated, inducing a metal-semiconductor transition. Thus, the behavior of silicon nanotubes differs significantly from carbon nanotubes, and the main source of the differences is the distortions in the lattice associated with the tendency of Si to make four chemical bonds.

  12. Gastroesophageal anastomosis: single-layer versus double-layer technique

    International Nuclear Information System (INIS)

    Aslam, V.A.; Bilal, A.; Khan, A.; Ahmed, M.

    2008-01-01

    Considerable controversy exists regarding the optimum technique for gastroesophageal anastomosis. Double layer technique has long been considered important for safe healing but there is evidence that single layer technique is also safe and can be performed in much shorter time. The purpose of this study was to compare the outcome of single layer and double layer techniques for gastroesophageal anastomosis. A prospective randomized study was conducted in cardiothoracic unit, Lady Reading Hospital from Jan 2006 to Jan 2008. Fifty patients with oesophageal carcinoma undergoing subtotal oesophagectomy were randomized to have the anastomosis by single layer continuous or double layer continuous technique (group A (n=24) and B (n=26) respectively). The demographic data, operative and anastomosis time, postoperative complications and hospital mortality were recorded on a proforma and analyzed on SPSS 10. There was no significant difference between group A and B in terms of age, gender, postoperative complications and duration of hospital stay. Anastomotic leak occurred in 4.2% patients in group A and 7.7% in group B (p=NS). Mean anastomosis time was 10.04 minutes in group A and 19.2 minutes in group B (p=0.0001). Mean operative time was 163.83 minutes and 170.96 minutes in group A and B respectively. Overall hospital mortality was 2%; no deaths occurred due to anastomotic leak. Single layer continuous technique is equally safe and can be performed in shorter time and at a lower cost than the double layer technique. (author)

  13. Experiments on ion acoustic typed double layers

    International Nuclear Information System (INIS)

    Chan, C.; Cho, M.H.; Intrator, T.; Hershkowitz, N.

    1984-01-01

    The formation of small amplitude double layers with potential drops the order of the electron temperature, was examined experimentally by pulsing a grid and thereby changing the electron drift across the target chamber of a triple plasma device. The rarefactive part of a long wavelength, low frequency ion wave grew in amplitude due to the presence of slowly drifting electrons. The corresponding current limitation led to the formation of the double layers. Depending on the plasma conditions, the asymmetric double layers either transform into a weak monotonic layer, a propagating shock, or a series of rarefactive solitary pulses. The rarefactive pulses propagate with Mach number less than one and resemble solitary plasma holes with density cavities in both the electron and the ion density profiles

  14. Photo and electroluminescence of porous silicon layers

    International Nuclear Information System (INIS)

    Keshmini, S.H.; Samadpour, S.; Haji-Ali, E.; Rokn-Abadi, M.R.

    1995-01-01

    Porous silicon (PSi) layers were prepared by both chemical and electrochemical methods on n- and p-type Si substrates. In the former technique, light emission was obtained from p-type and n-type samples. It was found that intense light illumination during the preparation process was essential for PSi formation on n-type substrates. An efficient electrochemical cell with some useful features was designed for electrochemical etching of silicon. Various preparation parameters were studied and photoluminescence emissions ranging from dark red to light blue were obtained from PSi samples prepared on p-type substrates. N-type samples produced emission ranging from dark red to orange yellow. Electroluminescence of porous silicon samples showed that the color of the emission was the same as the photoluminescence color of the sample, and its intensity and duration depended on the current density passed through the sample. The effects of exposure of samples to air, storage in vacuum and heat treatment in air on luminescence intensity of the samples and preparation of patterned porous layers were also studied. (author)

  15. Double stabilization of nanocrystalline silicon: a bonus from solvent

    Energy Technology Data Exchange (ETDEWEB)

    Kolyagin, Y. G.; Zakharov, V. N.; Yatsenko, A. V.; Paseshnichenko, K. A.; Savilov, S. V.; Aslanov, L. A., E-mail: aslanov.38@mail.ru [Lomonosov Moscow State University (Russian Federation)

    2016-01-15

    Double stabilization of the silicon nanocrystals was observed for the first time by {sup 29}Si and {sup 13}C MAS NMR spectroscopy. The role of solvent, 1,2-dimethoxyethane (glyme), in formation and stabilization of silicon nanocrystals as well as mechanism of modification of the surface of silicon nanocrystals by nitrogen-heterocyclic carbene (NHC) was studied in this research. It was shown that silicon nanocrystals were stabilized by the products of cleavage of the C–O bonds in ethers and similar compounds. The fact of stabilization of silicon nanoparticles with NHC ligands in glyme was experimentally detected. It was demonstrated that MAS NMR spectroscopy is rather informative for study of the surface of silicon nanoparticles but it needs very pure samples.

  16. Study of double porous silicon surfaces for enhancement of silicon solar cell performance

    Science.gov (United States)

    Razali, N. S. M.; Rahim, A. F. A.; Radzali, R.; Mahmood, A.

    2017-09-01

    In this work, design and simulation of double porous silicon surfaces for enhancement of silicon solar cell is carried out. Both single and double porous structures are constructed by using TCAD ATHENA and TCAD DEVEDIT tools of the SILVACO software respectively. After the structures were created, I-V characteristics and spectral response of the solar cell were extracted using ATLAS device simulator. Finally, the performance of the simulated double porous solar cell is compared with the performance of both single porous and bulk-Si solar cell. The results showed that double porous silicon solar cell exhibited 1.8% efficiency compared to 1.3% and 1.2% for single porous silicon and bulk-Si solar cell.

  17. Vertically aligned carbon nanotubes/diamond double-layered structure for improved field electron emission stability

    Energy Technology Data Exchange (ETDEWEB)

    Yang, L., E-mail: qiaoqin.yang@mail.usask.ca; Yang, Q.; Zhang, C.; Li, Y.S.

    2013-12-31

    A double-layered nanostructure consisting of a layer of vertically aligned Carbon Nanotubes (CNTs) and a layer of diamond beneath has been synthesized on silicon substrate by Hot Filament Chemical Vapor Deposition. The synthesis was achieved by first depositing a layer of diamond on silicon and then depositing a top layer of vertically aligned CNTs by applying a negative bias on the substrate holder. The growth of CNTs was catalyzed by a thin layer of spin-coated iron nitride. The surface morphology and structure of the CNTs/diamond double-layered structure were characterized by Scanning Electron Microscope, Energy Dispersive X-ray spectrum, and Raman Spectroscopy. Their field electron emission (FEE) properties were measured by KEITHLEY 237 high voltage measurement unit, showing much higher FEE current stability than single layered CNTs. - Highlights: • A new double-layered nanostructure consisting of a layer of vertically aligned CNTs and a layer of diamond beneath has been synthesized by hot filament chemical vapor deposition. • This double-layered structure exhibits superior field electron emission stability. • The improvement of emission stability is due to the combination of the unique properties of diamond and CNTs.

  18. Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1997-01-01

    Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature.

  19. Superlattice doped layers for amorphous silicon photovoltaic cells

    Science.gov (United States)

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  20. Synthesis and charge storage properties of double-layered NiSi nanocrystals

    International Nuclear Information System (INIS)

    Yoon, Jong-Hwan

    2010-01-01

    Based on bidirectional diffusion of Ni atoms, double-layered nickel silicide (NiSi) nanocrystals (NCs) for multilevel charge storage were fabricated, and their charge storage properties were examined. The double layer was produced by long-term thermal annealing (for 4 h at 900 o C) of a sandwich structure comprised of a thin Ni film of 0.3 nm sandwiched between two silicon-rich oxide (SiO 1.36 ) layers. Transmission electron microscopic image clearly exhibits a distinct NiSi nanocrystal double layer with a gap of about 7 nm between the mean positions of particle distribution in each NC layer. Capacitance-voltage measurements on the metal/oxide/semiconductor (MOS) capacitors with the double-layered NiSi nanocrystals are shown to have the apparent two plateaus of charge storage, the large memory window of about 9 V and the improved charge retention stability.

  1. Double layers are not particle accelerators

    International Nuclear Information System (INIS)

    Bryant, D.A.; Bingham, R.; Angelis, U. de.

    1991-02-01

    It is pointed out that the continuing advocacy of electrostatic double layers as particle accelerators in the aurora and other space and astrophysical plasmas is fundamentally unsound. It is suggested furthermore that there is little reason to invoke static or quasi-static electric fields as the cause of auroral electron acceleration. Stochastic acceleration by electrostatic wave turbulence appears to present a natural explanation for this and for electron acceleration in other space and astrophysical plasmas. (author)

  2. Double layers, waves and particle acceleration

    Energy Technology Data Exchange (ETDEWEB)

    Bryant, D.A.; Perry, C.H.; Bingham, R.; de Angelis, U.

    1993-09-01

    The author's conclusions that static potential differences, including those associated with double layers, could not be the cause of auroral electron acceleration, and that resonance with electrostatic wave turbulence provided a possible mechanism were dismissed in a recent publication as being totally incorrect. In this reply, the author finds the criticism to be built upon a number of misconceptions and factual errors which render it invalid. He is, therefore, able to re-affirm his earlier conclusions.

  3. Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

    International Nuclear Information System (INIS)

    Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

    2006-01-01

    Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

  4. Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

    Science.gov (United States)

    Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

    2011-01-01

    A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

  5. Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

    Science.gov (United States)

    Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

    2018-01-01

    The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

  6. Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

    International Nuclear Information System (INIS)

    Oude Elferink, J.B.

    1989-01-01

    In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

  7. Quality Tests of Double-Sided Silicon Strip Detectors

    CERN Document Server

    Cambon, T; CERN. Geneva; Fintz, P; Guillaume, G; Jundt, F; Kuhn, C; Lutz, Jean Robert; Pagès, P; Pozdniakov, S; Rami, F; Sparavec, K; Dulinski, W; Arnold, L

    1997-01-01

    The quality of the SiO2 insulator (AC coupling between metal and implanted strips) of double-sided Silicon strip detectors has been studied by using a probe station. Some tests performed on 23 wafers are described and the results are discussed. Remark This note seems to cause problems with ghostview but it can be printed without any problem.

  8. Oxide layers for silicon detector protection against enviroment effects

    International Nuclear Information System (INIS)

    Bel'tsazh, E.; Brylovska, I.; Valerian, M.

    1986-01-01

    It is shown that for protection of silicon detectors of nuclear radiations oxide layers could be used. The layers are produced by electrochemical oxidation of silicon surface with the following low-temperature annealing. These layers have characteristics similar to those for oxide layers produced by treatment of silicon samples at elevated temperature in oxygen flow. To determine properties of oxide layers produced by electrochemical oxidation the α-particle back-scattering method and the method of volt-farad characteristics were used. Protection properties of such layers were checked on the surface-barrier detectors. It was shown that protection properties of such detectors were conserved during long storage at room temperature and during their storage under wet-bulb temperature. Detectors without protection layer have worsened their characteristics

  9. Comparative measurements of proton dechanneling in silicon under channeling, blocking and double alignment conditions

    International Nuclear Information System (INIS)

    Kerkow, H.; Pietsch, H.; Taeubner, F.

    1980-01-01

    Backscattering yields of 300 keV protons are measured under channeling (sub(ch)), blocking (sub(bl)) and double alignment (sub(da)) conditions on (111)-silicon crystals. It was established that the relation sub(ch)-sub(bl)sub(da) is fulfilled within an experimental error of 10% for clean surfaces as well as for vacuum deposited layers on the crystal surface. (author)

  10. Slim edges in double-sided silicon 3D detectors

    International Nuclear Information System (INIS)

    Povoli, M; Dalla Betta, G-F; Bagolini, A; Boscardin, M; Giacomini, G; Vianello, E; Zorzi, N

    2012-01-01

    Minimization of the insensitive edge area is one of the key requirements for silicon radiation detectors to be used in future silicon trackers. In 3D detectors this goal can be achieved with the active edge, at the expense of a high fabrication process complexity. In the framework of the ATLAS 3D sensor collaboration, we produced modified 3D silicon sensors with a double-sided technology. While this approach is not suitable to obtain active edges, because it does not use a support wafer, it allows for a new type of edge termination, the slim edge. In this paper we report on the development of the slim edge, from numerical simulations to design and testing, proving that it works effectively without increasing the fabrication complexity of silicon 3D detectors, and that it could be further optimized to reduce the insensitive edge region to less than 100 μm.

  11. Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

    International Nuclear Information System (INIS)

    Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

    2015-01-01

    Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

  12. Numerical double layer solutions with ionization

    International Nuclear Information System (INIS)

    Andersson, D.; Soerensen, J.

    1982-08-01

    Maxwell's equation div D = ro in one dimension is solved numerically, taking ionization into account. Time independent anode sheath and double layer solutions are obtained. By varying voltage, neutral gas pressure, temperature of the trapped ions on the cathode side and density and temperature of the trapped electrones on the anode side, diagrams are constructed that show permissible combinations of these parameters. Results from a recent experiment form a subset. Distribution functions, the Langmuir condition, some scaling laws and a possible application to the lower ionosphere are discussed. (Authors)

  13. Equilibrium double layers in extended Pierce diodes

    International Nuclear Information System (INIS)

    Ciubotariu-Jassy, C.I.

    1992-01-01

    The extended Pierce diode is similar to the standard (or classical) Pierce diode, but has passive circuit elements in place of the short circuit between the electrodes. This device is important as an approximation to real bounded plasma systems. It consists of two parallel plane electrodes (an emitter located at x=0 and a collector located at x=l) and a collisionless cold electron beam travelling between them. The electrons are neutralized by a background of comoving massive ions. This situation is analysed in this paper and new equilibrium double layer (DL) plasma structures are obtained. (author) 6 refs., 3 figs

  14. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  15. The design and construction of a double-sided Silicon Microvertex Detector for the L3 experiment at CERN

    International Nuclear Information System (INIS)

    Adam, A.; Ambrosi, G.; Babucci, E.; Bertucci, B.; Biasini, M.; Bilei, G.M.; Caria, M.; Checcucci, B.; Easo, S.; Fiandrini, E.; Krastev, V.R.; Massetti, R.; Pauluzzi, M.; Santocchia, A.; Servoli, L.; Baschirotto, A.; Bosetti, M.; Pensotti, S.; Rancoita, P.G.; Rattaggi, M.; Terzi, G.; Battiston, R.; Bay, A.; Burger, W.J.; Extermann, P.; Perrin, E.; Susinno, G.F.; Bencze, G.Y.L.; Kornis, J.; Toth, J.; Bobbink, G.J.; Duinker, P.; Brooks, M.L.; Coan, T.E.; Kapustinsky, J.S.; Kinnison, W.W.; Lee, D.M.; Mills, G.B.; Thompson, T.C.; Busenitz, J.; DiBitonto, D.; Camps, C.; Commichau, V.; Hangartner, K.; Schmitz, P.; Chen, A.; Hou, S.; Lin, W.T.; Gougas, A.; Kim, D.; Paul, T.; Hauviller, C.; Herve, A.; Josa, I.; Landi, G.; Lebeau, M.; Lecomte, P.; Viertel, G.M.; Waldmeier, S.; Leiste, R.; Lejeune, E.; Weill, R.; Lohmann, W.; Nowak, H.; Sachwitz, M.; Schoeniech, B.; Tonisch, F.; Trowitzsch, G.; Vogt, H.; Passaleva, G.; Yeh, S.C.

    1993-01-01

    A Silicon Microvertex Detector (SMD) has been commissioned for the L3 experiment at the Large Electron-Positron colliding-beam accelerator (LEP) at the European Center for Nuclear Physics, (CERN). The SMD is a 72,672 channel, two layer barrel tracker that is comprised of 96 ac-coupled, double-sided silicon detectors. Details of the design and construction are presented

  16. Investigation of the interface region between a porous silicon layer and a silicon substrate

    International Nuclear Information System (INIS)

    Lee, Ki-Won; Park, Dae-Kyu; Kim, Young-You; Shin, Hyun-Joon

    2005-01-01

    Atomic force microscopy (AFM) measurement and X-ray diffraction (XRD) analysis were performed to investigate the physical and structural characteristics of the interface region between a porous silicon layer and a silicon substrate. We discovered that, when anodization time was increased under a constant current density, the Si crystallites in the interface region became larger and formed different lattice parameters than observed in the porous silicon layer. Secondary ion mass spectrometry (SIMS) analysis also revealed that the Si was more concentrated in the interface region than in the porous silicon layer. These results were interpreted by the deficiency of the HF solution in reaching to the interface through the pores during the porous silicon formation

  17. Double side multicrystalline silicon passivation by one step stain etching-based porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Mohamed, Seifeddine Belhadj; Ben Rabha, Mohamed; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2012-10-15

    In this paper, we investigate the effect of stain etching-based porous silicon on the double side multicrystalline silicon. Special attention is given to the use of the stain etched PS as an antireflection coating as well as for surface passivating capabilities. Stain etching of double side multicrystalline silicon leads to the formation of PS nanostructures, that dramatically decrease the surface reflectivity from 30% to about 7% and increase the effective lifetime from 1 {mu}s to 10 {mu}s at a minority carrier density ({Delta}n) of 10{sup 15} cm{sup -3}. These results let us correlate the rise of the lifetime values to the photoluminescence intensity to the hydrogen and oxide passivation as shown by FTIR analysis. This low-cost PS formation process can be applied in the photovoltaic cell technology as a standard procedure (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Polysulfide intercalated layered double hydroxides for metal capture applications

    Energy Technology Data Exchange (ETDEWEB)

    Kanatzidis, Mercouri G.; Ma, Shulan

    2017-04-04

    Polysulfide intercalated layered double hydroxides and methods for their use in vapor and liquid-phase metal capture applications are provided. The layered double hydroxides comprise a plurality of positively charged host layers of mixed metal hydroxides separated by interlayer spaces. Polysulfide anions are intercalated in the interlayer spaces.

  19. Characterization procedures for double-sided silicon microstrip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bruner, N.L. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Frautschi, M.A. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Hoeferkamp, M.R. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Seidel, S.C. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.

    1995-08-15

    Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage. (orig.).

  20. Characterization procedures for double-sided silicon microstrip detectors

    International Nuclear Information System (INIS)

    Bruner, N.L.; Frautschi, M.A.; Hoeferkamp, M.R.; Seidel, S.C.

    1995-01-01

    Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage. (orig.)

  1. Double-shelled silicon anode nanocomposite materials: A facile approach for stabilizing electrochemical performance via interface construction

    Science.gov (United States)

    Du, Lulu; Wen, Zhongsheng; Wang, Guanqin; Yang, Yan-E.

    2018-04-01

    The rapid capacity fading induced by volumetric changes is the main issue that hinders the widespread application of silicon anode materials. Thus, double-shelled silicon composite materials where lithium silicate was located between an Nb2O5 coating layer and a silicon active core were configured to overcome the chemical compatibility issues related to silicon and oxides. The proposed composites were prepared via a facile co-precipitation method combined with calcination. Transmission electron microscopy and X-ray photoelectron spectroscopy analysis demonstrated that a transition layer of lithium silicate was constructed successfully, which effectively hindered the thermal inter-diffusion between the silicon and oxide coating layers during heat treatment. The electrochemical performance of the double-shelled silicon composites was enhanced dramatically with a retained specific capacity of 1030 mAh g-1 after 200 cycles at a current density of 200 mA g-1 compared with 598 mAh g-1 for a core-shell Si@Nb2O5 composite that lacked the interface. The lithium silicate transition layer was shown to play an important role in maintaining the high electrochemical stability.

  2. X-ray and scanning electron microscopic investigation of porous silicon and silicon epitaxial layers grown on porous silicon

    International Nuclear Information System (INIS)

    Wierzchowski, W.; Pawlowska, M.; Nossarzewska-Orlowska, E.; Brzozowski, A.; Wieteska, K.; Graeff, W.

    1998-01-01

    The 1 to 5 μm thick layers of porous silicon and epitaxial layers grown on porous silicon were studied by means of X-ray diffraction methods, realised with a wide use of synchrotron source and scanning microscopy. The results of x-ray investigation pointed the difference of lateral periodicity between the porous layer and the substrate. It was also found that the deposition of epitaxial layer considerably reduced the coherence of porous fragments. A number of interface phenomena was also observed in section and plane wave topographs. The scanning electron microscopic investigation of cleavage faces enabled direct evaluation of porous layer thickness and revealed some details of their morphology. The scanning observation of etched surfaces of epitaxial layers deposited on porous silicon revealed dislocations and other defects not reasonable in the X-ray topographs. (author)

  3. Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation

    International Nuclear Information System (INIS)

    Skorupa, W.; Kreissig, U.; Hensel, E.; Bartsch, H.

    1984-01-01

    Carrier lifetimes were measured in epitaxial silicon layers deposited on buried silicon nitride produced by high-dose nitrogen implantation at 330 keV. The values were in the range 20-200 μs. The results are remarkable taking into account the high density of crystal defects in the epitaxial layers. Comparing with other SOI technologies the measured lifetimes are higher by 1-2 orders of magnitude. (author)

  4. Optical and Electrical Characteristics of Graphene Double Layer Formed by a Double Transfer of Graphene Single Layers.

    Science.gov (United States)

    Kim, Young Jun; Bae, Gi Yoon; Chun, Sungwoo; Park, Wanjun

    2016-03-01

    We demonstrate formation of double layer graphene by means of a double transfer using two single graphene layers grown by a chemical vapor deposition method. It is observed that shiftiness and broadness in the double-resonance of Raman scattering are much weaker than those of bilayer graphene formed naturally. Transport characteristics examined from transmission line measurements and field effect transistors show the similar behavior with those of single layer graphene. It indicates that interlayer separation, in electrical view, is large enough to avoid correlation between layers for the double layer structure. It is also observed from a transistor with the double layer graphene that molecules adsorpted on two inner graphene surfaces in the double layered structure are isolated and conserved from ambient environment.

  5. XPS and TEM study of W-DLC/DLC double-layered film

    International Nuclear Information System (INIS)

    Takeno, Takanori; Komiyama, Takao; Miki, Hiroyuki; Takagi, Toshiyuki; Aoyama, Takashi

    2009-01-01

    A double-layered film of tungsten-containing diamond-like carbon (W-DLC) and DLC, (W-DLC)/DLC, was investigated. A film of 1.6 μm in thickness was deposited onto silicon substrate. The investigate double-layered coating was deposited by using the combination of PECVD and co-sputtering of tungsten metal target. Structure, interface and chemical bonding state of the investigated film were analyzed by Transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). From the results of the analyses, the structure of double-layered film is that amorphous phase of carbon is continued from DLC to W-DLC and tungsten metal clusters are dispersed in W-DLC layer.

  6. Ultrastrong Stationary Double Layers in a Nondischarge Magnetoplasma

    DEFF Research Database (Denmark)

    Sato, N.; Hatakeyama, R.; Iizuka, S.

    1981-01-01

    Ultrastrong stationary double layers are generated in a magnetoplasma by simply applying potential differences between two plasma sources. The potential drop ϕD of the double layer is increased up to eϕD/Te≃2×103 (Te is the electron temperature in eV) with no difficulties caused by gas discharge....... There are always large spiky fluctuations on the low-potential tail of the double layers....

  7. Double layer formed by beam driven ion-acoustic turbulence

    International Nuclear Information System (INIS)

    Ludwig, G.O.; Ferreira, J.L.; Montes, A.

    1987-08-01

    Small amplitudes steady-state ion-acoustic double layers are observed to form in a plasma transversed by a beam of cold electrons. The importance of turbulence in maintaining the double layer is demonstrated. The measured wave spectrum is in approximate agreement with models deriveted from renornalized turbulence theory. The general features of the double layer are compared with results from particle simulation studies. (author) [pt

  8. The double layers in the plasma sheet boundary layer during magnetic reconnection

    Science.gov (United States)

    Guo, J.; Yu, B.

    2014-11-01

    We studied the evolutions of double layers which appear after the magnetic reconnection through two-dimensional electromagnetic particle-in-cell simulation. The simulation results show that the double layers are formed in the plasma sheet boundary layer after magnetic reconnection. At first, the double layers which have unipolar structures are formed. And then the double layers turn into bipolar structures, which will couple with another new weak bipolar structure. Thus a new double layer or tripolar structure comes into being. The double layers found in our work are about several ten Debye lengths, which accords with the observation results. It is suggested that the electron beam formed during the magnetic reconnection is responsible for the production of the double layers.

  9. Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

    Science.gov (United States)

    Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

    2017-02-01

    In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

  10. Development and basic photovoltaic characteristics of a solar generator with double-sided silicon cells

    International Nuclear Information System (INIS)

    Aliev, R.; Mansurov, Kh.

    2015-01-01

    A new solar generator consisting of double-sided silicon sensing elements is described. The basic photovoltaic parameters of solar generators are made of mono- and polycrystalline silicon solar cells. (author)

  11. UV radiation hardness of silicon inversion layer solar cells

    International Nuclear Information System (INIS)

    Hezel, R.

    1990-01-01

    For full utilization of the high spectral response of inversion layer solar cells in the very-short-wavelength range of the solar spectrum sufficient ultraviolet-radiation hardness is required. In addition to the charge-induced passivation achieved by cesium incorporation into the silicon nitride AR coating, in this paper the following means for further drastic reduction of UV light-induced effects in inversion layer solar cells without encapsulation are introduced and interpretations are given: increasing the nitride deposition temperature, silicon surface oxidation at low temperatures, and texture etching and using higher substrate resistivities. High UV radiation tolerance and improvement of the cell efficiency could be obtained simultaneously

  12. On the negative resistance of double layers

    International Nuclear Information System (INIS)

    Raadu, M.A.; Silevitch, M.B.

    1982-08-01

    It is known that large amplitudes oscillations can occur in the current flowing through a plasma diode, typically when a constant potential is applied across the device. Burger (1965) suggested via a computer simulation that the oscillation characteristics was a function of the quantities T sub (e) and T sub (i), namely the respective time for an electron and an ion to cross the electric field region inside the diode. On the rapid time scale T sub (e) the self consistent equilibrium configuration, was unstable. Norris (1964) had previously arrived at the same conclusion using analytical arguments. In that work, it was concluded that the instability occurred since the diode acted as a negative resistance on the T sub (e) scale. A positive feedback effect forced the system away from equilibrium. Silevitch (1981) used the Burger mechanism to suggest an explanation for the flickering aurora phenomenon. He extended the Norris argument and showed by a variational method that a plausible analytic model for a double layer (DL) behaved as a negative resistance on the T sub (e) scale. In this present work we re-examine the negative resistance calculation by taking a more detailed account of the constraints which are imposed on the electron distributions that exist in the DL region. Specifically, we shall focus at the high potential side of the DL. (Authors)

  13. Anomalous dc resistivity and double layers in the auroral ionosphere

    International Nuclear Information System (INIS)

    Kindel, J.M.; Barnes, C.; Forslund, D.W.

    1980-01-01

    There are at least four candidate instabilities which might account for anomalous dc rereresistivity in the auroral ionosphere. These are: the ion-acoustic instability, the Buneman instability, the ion-cyclotron instability and double layers. Results are reported of computer simulations of these four instabilities which suggest that double layers are most likely to be responsible for sistivity in the auroral zone

  14. Ion-acoustic solitary waves near double layers

    International Nuclear Information System (INIS)

    Kuehl, H.H.; Imen, K.

    1985-01-01

    The possibility of ion-acoustic solitary-wave solutions in the uniform plasma on the high-potential side of double layer is investigated. Based on a fluid model of the double layer, it is found that both compressive and rarefactive solitary waves are allowed. Curves are presented which show the regions in parameter space in which these solutions exist

  15. Protective silicon coating for nanodiamonds using atomic layer deposition

    International Nuclear Information System (INIS)

    Lu, J.; Wang, Y.H.; Zang, J.B.; Li, Y.N.

    2007-01-01

    Ultrathin silicon coating was deposited on nanodiamonds using atomic layer deposition (ALD) from gaseous monosilane (SiH 4 ). The coating was performed by sequential reaction of SiH 4 saturated adsorption and in situ decomposition. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were utilized to investigate the structural and morphological properties of the coating. Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) were used to compare the thermal stability of nanodiamonds before and after silicon coating. The results confirmed that the deposited cubic phase silicon coating was even and continuous. The protective silicon coating could effectively improve the oxidation resistance of nanodiamonds in air flow, which facilitates the applications of nanodiamonds that are commonly hampered by their poor thermal stability

  16. Protective silicon coating for nanodiamonds using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lu, J. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China); Wang, Y.H. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China); Zang, J.B. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China) and College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China)]. E-mail: diamondzjb@163.com; Li, Y.N. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China)

    2007-01-30

    Ultrathin silicon coating was deposited on nanodiamonds using atomic layer deposition (ALD) from gaseous monosilane (SiH{sub 4}). The coating was performed by sequential reaction of SiH{sub 4} saturated adsorption and in situ decomposition. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were utilized to investigate the structural and morphological properties of the coating. Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) were used to compare the thermal stability of nanodiamonds before and after silicon coating. The results confirmed that the deposited cubic phase silicon coating was even and continuous. The protective silicon coating could effectively improve the oxidation resistance of nanodiamonds in air flow, which facilitates the applications of nanodiamonds that are commonly hampered by their poor thermal stability.

  17. Mobility of charge carriers in porous silicon layers

    International Nuclear Information System (INIS)

    Forsh, P. A.; Martyshov, M. N.; Latysheva, A. P.; Vorontsov, A. S.; Timoshenko, V. Yu.; Kashkarov, P. K.

    2008-01-01

    The (conduction) mobility of majority charge carriers in porous silicon layers of the n and p types is estimated by joint measurements of electrical conductivity and free charge carrier concentration, which is determined from IR absorption spectra. Adsorption of donor and acceptor molecules leading to a change in local electric fields in the structure is used to identify the processes controlling the mobility in porous silicon. It is found that adsorption of acceptor and donor molecules at porous silicon of the p and n types, respectively, leads to a strong increase in electrical conductivity, which is associated with an increase in the concentration of free carrier as well as in their mobility. The increase in the mobility of charge carriers as a result of adsorption indicates the key role of potential barriers at the boundaries of silicon nanocrystals and may be due to a decrease in the barrier height as a result of adsorption

  18. The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

    International Nuclear Information System (INIS)

    Colder, H.; Marie, P.; Gourbilleau, F.

    2008-01-01

    Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

  19. Double layers formed by beam driven ion-acoustic turbulence

    International Nuclear Information System (INIS)

    Ludwig, G.O.; Ferreira, J.L.; Montes, A.

    1987-01-01

    Small amplitude steady-state ion-acoustic layers are observed to form in a plasma traversed by a beam of cold electrons. The importance of turbulence in maintaining the double layer is demonstrated. The measured wave spectrum is in approximate agrreement with models derived from renormalized turbulence theory. The general features of the double layer are compared with results from particle simulation studies. (author) [pt

  20. Transparent conducting oxide layers for thin film silicon solar cells

    NARCIS (Netherlands)

    Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

    2009-01-01

    Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

  1. Detector and Front-end electronics for ALICE and STAR silicon strip layers

    CERN Document Server

    Arnold, L; Coffin, J P; Guillaume, G; Higueret, S; Jundt, F; Kühn, C E; Lutz, Jean Robert; Suire, C; Tarchini, A; Berst, D; Blondé, J P; Clauss, G; Colledani, C; Deptuch, G; Dulinski, W; Hu, Y; Hébrard, L; Kucewicz, W; Boucham, A; Bouvier, S; Ravel, O; Retière, F

    1998-01-01

    Detector modules consisting of Silicon Strip Detector (SSD) and Front End Electronics (FEE) assembly have been designed in order to provide the two outer layers of the ALICE Inner Tracker System (ITS) [1] as well as the outer layer of the STAR Silicon Vertex Tracker (SVT) [2]. Several prototypes have beenproduced and tested in the SPS and PS beam at CERN to validate the final design. Double-sided, AC-coupled SSD detectors provided by two different manufacturers and also a pair of single-sided SSD have been asssociated to new low-power CMOS ALICE128C ASIC chips in a new detector module assembly. The same detectors have also been associated to current Viking electronics for reference purpose. These prototype detector modules are described and some first results are presented.

  2. Investigation of silicon/silicon germanium multiple quantum well layers in silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Loudon, A.Y.

    2002-01-01

    Silicon single photon avalanche diodes (SPADs) are currently utilised in many single photon counting systems due to their high efficiency, fast response times, low voltage operation and potentially low cost. For fibre based applications however (at wavelengths 1.3 and 1.55μm) and eye-safe wavelength applications (>1.4μm), Si devices are not suitable due to their 1.1μm absorption edge and hence greatly reduced absorption above this wavelength. InGaAs/InP or Ge SPADs absorb at these longer wavelengths, but both require cryogenic cooling for low noise operation and III-V integration with conventional Si circuitry is difficult. Si/SiGe is currently attracting great interest for optoelectronic applications and attempts to combine Si avalanche photodiodes with Si/SiGe multiple quantum well absorbing layers have been successful. Here, an effort to utilise this material system has shown an improvement in photon counting efficiency above 1.1μm of more than 30 times compared to an all-Si control device. In addition to its longer wavelength response, this Si/SiGe device has room temperature operation, low cost fabrication and is compatible with conventional Si circuitry. (author)

  3. Silicon carbide layer structure recovery after ion implantation

    International Nuclear Information System (INIS)

    Violin, Eh.E.; Demakov, K.D.; Kal'nin, A.A.; Nojbert, F.; Potapov, E.N.; Tairov, Yu.M.

    1984-01-01

    The process of recovery of polytype structure of SiC surface layers in the course of thermal annealing (TA) and laser annealing (LA) upon boron and aluminium implantation is studied. The 6H polytype silicon carbide C face (0001) has been exposed to ion radiation. The ion energies ranged from 80 to 100 keV, doses varied from 5x10 14 to 5x10 16 cm -2 . TA was performed in the 800-2000 K temperature range. It is shown that the recovery of the structure of silicon carbide layers after ion implantation takes place in several stages. Considerable effect on the structure of the annealed layers is exerted by the implantation dose and the type of implanted impurity. The recovery of polytype structure is possible only under the effect of laser pulses with duration not less than the time for the ordering of the polytype in question

  4. Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon

    International Nuclear Information System (INIS)

    Artamanov, V.V.; Valakh, M.Ya.; Klyui, N.I.; Mel'nik, V.P.; Romanyuk, A.B.; Romanyuk, B.N.; Yukhimchuk, V.A.

    1998-01-01

    The properties of silicon structures with silicon carbide (SiC) buried layers produced by high-dose carbon implantation followed by a high-temperature anneal are investigated by Raman and infrared spectroscopy. The influence of the coimplantation of oxygen on the features of SiC buried layer formation is also studied. It is shown that in identical implantation and post-implantation annealing regimes a SiC buried layer forms more efficiently in CZ Si wafers or in Si (CZ or FZ) subjected to the coimplantation of oxygen. Thus, oxygen promotes SiC layer formation as a result of the formation of SiO x precipitates and accommodation of the volume change in the region where the SiC phase forms. Carbon segregation and the formation of an amorphous carbon film on the SiC grain boundaries are also discovered

  5. Adsorption and diffusion of lithium on layered silicon for Li-ion storage.

    Science.gov (United States)

    Tritsaris, Georgios A; Kaxiras, Efthimios; Meng, Sheng; Wang, Enge

    2013-05-08

    The energy density of Li-ion batteries depends critically on the specific charge capacity of the constituent electrodes. Silicene, the silicon analogue to graphene, being of atomic thickness could serve as high-capacity host of Li in Li-ion secondary batteries. In this work, we employ first-principles calculations to investigate the interaction of Li with Si in model electrodes of free-standing single-layer and double-layer silicene. More specifically, we identify strong binding sites for Li, calculate the energy barriers accompanying Li diffusion, and present our findings in the context of previous theoretical work related to Li-ion storage in other structural forms of silicon: the bulk and nanowires. The binding energy of Li is ~2.2 eV per Li atom and shows small variation with respect to Li content and silicene thickness (one or two layers) while the barriers for Li diffusion are relatively low, typically less than 0.6 eV. We use our theoretical findings to assess the suitability of two-dimensional silicon in the form of silicene layers for Li-ion storage.

  6. NO and SCN -intercalated layered double hydroxides: structure and ...

    Indian Academy of Sciences (India)

    2018-02-05

    Feb 5, 2018 ... Keywords. Nitrite ion; thiocyanate ion; layered double hydroxide; structure refinement. 1. Introduction .... applications of LDHs is sorption/uptake of toxic anions ... by ion chromatography using a Metrohm Model 861 Advanced.

  7. The electric double layer has a life of its own

    NARCIS (Netherlands)

    Merlet, Céline; Limmer, David T.; Salanne, Mathieu; Van Roij, René; Madden, Paul A.; Chandler, David; Rotenberg, Benjamin

    2014-01-01

    Using molecular dynamics simulations with recently developed importance sampling methods, we show that the differential capacitance of a model ionic liquid based double-layer capacitor exhibits an anomalous dependence on the applied electrical potential. Such behavior is qualitatively incompatible

  8. Liquid Crystals of Lithium Dodecylbenzenesulfonate for Electric Double Layer Capacitors

    International Nuclear Information System (INIS)

    Kuzmin, Andrey Vasil’evich; Yurtov, Evgeny V.

    2016-01-01

    Ionic lyotropic liquid crystals based on lithium dodecylbenzenesulfonate were used as electrolytes for electric double layer capacitors with carbon fibrous electrodes. The capacitors were tasted by cyclic voltammetry, galvanostatic charge and discharge, and impedance spectroscopy. The highest specific capacitance was achieved for electrical double layer capacitor equipped with ionic lyotropic liquid crystal of lithium dodecylbenzenesulfonate 35 wt% in water. The specific capacitance of capacitor was calculated from galvanostatic discharge curves – 15 F/g of carbon fibrous material

  9. Generation mechanism and properties of plasma double layers

    International Nuclear Information System (INIS)

    Sanduloviciu, M.; Lozneanu, E.

    1985-01-01

    The generation mechanism of plasma double layers is studied surveying the results of some experiments. The main mechanism is the same in the cases of collisional and collisionless plasmas. Inelastic quantum collision processes taking place between plasma electrons, accelerated in a local field up to near the same oriented velocity and the neutral particles of the background gases create the necessary conditions for double layer formation. (D.Gy.)

  10. New developments in double sided silicon strip detectors

    International Nuclear Information System (INIS)

    Becker, H.; Boulos, T.; Cattaneo, P.; Dietl, H.; Hauff, D.; Holl, P.; Lange, E.; Lutz, G.; Moser, H.G.; Schwarz, A.S.; Settles, R.; Struder, L.; Kemmer, J.; Buttler, W.

    1990-01-01

    A new type of double sided silicon strip detector has been built and tested using highly density VLSI readout electronics connected to both sides. Capacitive coupling of the strips to the readout electronics has been achieved by integrating the capacitors into the detector design, which was made possible by introducing a new detector biasing concept. Schemes to simplify the technology of the fabrication of the detectors are discussed. The static performance properties of the devices as well as implications of the use of VLSI electronics in their readout are described. Prototype detectors of the described design equipped with high density readout electronics have been installed in the ALEPH detector at LEP. Test results on the performance are given

  11. Drag Effect in Double-Layer Dipolar Fermi Gases

    International Nuclear Information System (INIS)

    Tanatar, B; Renklioglu, B; Oktel, M O

    2014-01-01

    We consider two parallel layers of two-dimensional spin-polarized dipolar Fermi gas without any tunneling between the layers. The effective interactions describing screening and correlation effects between the dipoles in a single layer (intra-layer) and across the layers (interlayer) are modeled within the Hubbard approximation. We calculate the rate of momentum transfer between the layers when the gas in one layer has a steady flow. The momentum transfer induces a steady flow in the second layer which is assumed initially at rest. This is the drag effect familiar from double-layer semiconductor and graphene structures. Our calculations show that the momentum relaxation time has temperature dependence similar to that in layers with charged particles which we think is related to the contributions from the collective modes of the system

  12. Double transparent conducting layers for Si photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Ju-Hyung [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States); Kim, Joondong, E-mail: joonkim@incheon.ac.kr [Department of Electrical Engineering, Incheon National University, Incheon, 406772 (Korea, Republic of); Park, Yun Chang [Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305806 (Korea, Republic of); Moon, Sang-Jin [Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); Anderson, Wayne A. [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States)

    2013-11-29

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process.

  13. Double transparent conducting layers for Si photovoltaics

    International Nuclear Information System (INIS)

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang; Moon, Sang-Jin; Anderson, Wayne A.

    2013-01-01

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process

  14. Nonlocal Poisson-Fermi double-layer models: Effects of nonuniform ion sizes on double-layer structure

    Science.gov (United States)

    Xie, Dexuan; Jiang, Yi

    2018-05-01

    This paper reports a nonuniform ionic size nonlocal Poisson-Fermi double-layer model (nuNPF) and a uniform ionic size nonlocal Poisson-Fermi double-layer model (uNPF) for an electrolyte mixture of multiple ionic species, variable voltages on electrodes, and variable induced charges on boundary segments. The finite element solvers of nuNPF and uNPF are developed and applied to typical double-layer tests defined on a rectangular box, a hollow sphere, and a hollow rectangle with a charged post. Numerical results show that nuNPF can significantly improve the quality of the ionic concentrations and electric fields generated from uNPF, implying that the effect of nonuniform ion sizes is a key consideration in modeling the double-layer structure.

  15. Combined analyses of ion beam synthesized layers in porous silicon

    International Nuclear Information System (INIS)

    Ramos, A.R.; Silva, M.F. da; Silva, M.R. da; Soares, J.C.; Paszti, F.; Horvath, Z.E.; Vazsonyi, E.; Conde, O.

    2001-01-01

    High dose ion implantation was used to form polycrystalline silicide films on porous silicon with different native concentrations of light impurities (C and O). Porous silicon layers several μm thick were implanted with 170 KeV Cr + ions to fluences of 3x10'1 7 ions/cm 2 both at room temperature and 450 o C. Similar samples were implanted with 100 keV Co + ions to fluences of 2x10 17 ions/cm 2 at room temperature and 350 o C and 450 o C. The formed silicide compounds were studied by Rutherford backscattering spectrometry, elastic recoil detection, glancing incidence X-ray diffraction, and four point-probe sheet resistance measurements. Selected Co implanted samples were analysed by cross-section transmission electron microscopy. Results show that the light impurities were partially expelled from the forming silicide layer. Combining cross-section transmission electron microscopy with ion beam methods it was possible to show that, in the implanted region, the porous structure collapses and densities during implantation, but the underlying porous silicon remains intact. The layer structure as well as the quality and type of the formed silicide, were found to depend on the original impurity level, implantation temperature, and annealing. (author)

  16. Single-layer graphene on silicon nitride micromembrane resonators

    DEFF Research Database (Denmark)

    Schmid, Silvan; Bagci, Tolga; Zeuthen, Emil

    2014-01-01

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect...... for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling...

  17. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    International Nuclear Information System (INIS)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-01-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection

  18. Effect of turbulent flow on the double electric layer

    International Nuclear Information System (INIS)

    Rutten, F. van.

    1978-01-01

    The existence of the double electric layer could explain the local deposition of corrosion products in water cooled reactors. It is shown that turbulent flow tends to drive the ions away from the wall, disturbs the diffuse layer and enables the electric field to extend further into the liquid phase. This electric field attracts the particles to the walls by electrophoresis [fr

  19. Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P. [Belarusian State University of Information and RadioElectronics (Belarus)

    2016-03-15

    The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

  20. Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

    International Nuclear Information System (INIS)

    Chubenko, E. B.; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P.

    2016-01-01

    The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

  1. Spontaneous layering of porous silicon layers formed at high current densities

    Energy Technology Data Exchange (ETDEWEB)

    Parkhutik, Vitali; Curiel-Esparza, Jorge; Millan, Mari-Carmen [R and D Center MTM, Technical University of Valencia, Valencia (Spain); Albella, Jose [Institute of Materials Science (ICMM CSIC) Madrid (Spain)

    2005-06-01

    We report here a curious effect of spontaneous fracturing of the silicon layers formed in galvanostatic conditions at medium and high current densities. Instead of formation of homogeneous p-Si layer as at low currents, a stack of thin layers is formed. Each layer is nearly separated from others and possesses rather flat interfaces. The effects is observed using p{sup +}-Si wafers for the p-Si formation and starts being noticeable at above 100 mA/cm{sup 2}. We interpret these results in terms of the porous silicon growth model where generation of dynamic mechanical stress during the p-Si growth causes sharp changes in Si dissolution mechanism from anisotropic etching of individual needle-like pores in silicon to their branching and isotropic etching. At this moment p-Si layer loses its adhesion to the surface of Si wafer and another p-Si layer starts growing. One of the mechanisms triggering on the separation of p-Si layers from one another is a fluctuation of local anodic current in the pore bottoms associated with gas bubble evolution during the p-Si formation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Water transport and desalination through double-layer graphyne membranes.

    Science.gov (United States)

    Akhavan, Mojdeh; Schofield, Jeremy; Jalili, Seifollah

    2018-05-16

    Non-equilibrium molecular dynamics simulations of water-salt solutions driven through single and double-layer graphyne membranes by a pressure difference created by rigid pistons are carried out to determine the relative performance of the membranes as filters in a reverse osmosis desalination process. It is found that the flow rate of water through a graphyne-4 membrane is twice that of a graphyne-3 membrane for both single and double-layer membranes. Although the addition of a second layer to a single-layer membrane reduces the membrane permeability, the double-layer graphyne membranes are still two or three orders of magnitude more permeable than commercial reverse osmosis membranes. The minimum reduction in flow rate for double-layer membranes occurs at a layer spacing of 0.35 nm with an AA stacking configuration, while at a spacing of 0.6 nm the flow rate is close to zero due to a high free energy barrier for permeation. This is caused by the difference in the environments on either side of the membrane sheets and the formation of a compact two-dimensional layer of water molecules in the interlayer space which slows down water permeation. The distribution of residence times of water molecules in the interlayer region suggests that at the critical layer spacing of 0.6 nm, a cross-over occurs in the mechanism of water flow from the collective movement of hydrogen-bonded water sheets to the permeation of individual water molecules. All membranes are demonstrated to have a high salt rejection fraction and the double-layered graphyne-4 membranes can further increase the salt rejection by trapping ions that have passed through the first membrane from the feed solution in the interlayer space.

  3. Reflectance analysis of porosity gradient in nanostructured silicon layers

    Science.gov (United States)

    Jurečka, Stanislav; Imamura, Kentaro; Matsumoto, Taketoshi; Kobayashi, Hikaru

    2017-12-01

    In this work we study optical properties of nanostructured layers formed on silicon surface. Nanostructured layers on Si are formed in order to reach high suppression of the light reflectance. Low spectral reflectance is important for improvement of the conversion efficiency of solar cells and for other optoelectronic applications. Effective method of forming nanostructured layers with ultralow reflectance in a broad interval of wavelengths is in our approach based on metal assisted etching of Si. Si surface immersed in HF and H2O2 solution is etched in contact with the Pt mesh roller and the structure of the mesh is transferred on the etched surface. During this etching procedure the layer density evolves gradually and the spectral reflectance decreases exponentially with the depth in porous layer. We analyzed properties of the layer porosity by incorporating the porosity gradient into construction of the layer spectral reflectance theoretical model. Analyzed layer is splitted into 20 sublayers in our approach. Complex dielectric function in each sublayer is computed by using Bruggeman effective media theory and the theoretical spectral reflectance of modelled multilayer system is computed by using Abeles matrix formalism. Porosity gradient is extracted from the theoretical reflectance model optimized in comparison to the experimental values. Resulting values of the structure porosity development provide important information for optimization of the technological treatment operations.

  4. Capacitance of carbon-based electrical double-layer capacitors.

    Science.gov (United States)

    Ji, Hengxing; Zhao, Xin; Qiao, Zhenhua; Jung, Jeil; Zhu, Yanwu; Lu, Yalin; Zhang, Li Li; MacDonald, Allan H; Ruoff, Rodney S

    2014-01-01

    Experimental electrical double-layer capacitances of porous carbon electrodes fall below ideal values, thus limiting the practical energy densities of carbon-based electrical double-layer capacitors. Here we investigate the origin of this behaviour by measuring the electrical double-layer capacitance in one to five-layer graphene. We find that the capacitances are suppressed near neutrality, and are anomalously enhanced for thicknesses below a few layers. We attribute the first effect to quantum capacitance effects near the point of zero charge, and the second to correlations between electrons in the graphene sheet and ions in the electrolyte. The large capacitance values imply gravimetric energy storage densities in the single-layer graphene limit that are comparable to those of batteries. We anticipate that these results shed light on developing new theoretical models in understanding the electrical double-layer capacitance of carbon electrodes, and on opening up new strategies for improving the energy density of carbon-based capacitors.

  5. Broadband wavelength conversion in hydrogenated amorphous silicon waveguide with silicon nitride layer

    Science.gov (United States)

    Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun

    2018-01-01

    Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.

  6. Layered structure in core–shell silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Van Tuan, Pham [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam); Anh Tuan, Chu; Thanh Thuy, Tran; Binh Nam, Vu [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet Street, Hanoi 10000 (Viet Nam); Toan Thang, Pham [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam); Hong Duong, Pham, E-mail: duongphamhong@yahoo.com [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet Street, Hanoi 10000 (Viet Nam); Thanh Huy, Pham, E-mail: huy.phamthanh@hust.edu.vn [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam)

    2014-10-15

    Silicon nanowires (NWs) with core–shell structures were prepared using the Vapor–Liquid–Solid (VLS) method. The wires have lengths of several hundreds of nanometers and diameters in the range of 30–50 nm. Generally, these wires are too large to exhibit the quantum confinement effect of excitons in Si nanocrystals. However, the photoluminescence (PL) and Raman spectra are similar to those of nanocrystalline silicon embedded in a SiO{sub 2} matrix, in which the recombination of quantum-confined excitons plays an important role. This effect occurs only when the average size of the silicon nanocrystals is smaller than 5 nm. To understand this discrepancy, TEM images of nanowires were obtained and analyzed. The results revealed that the cores of wires have a layered Si/SiO{sub 2} structure, in which the thickness of each layer is much smaller than its diameter. The temperature dependence of the PL intensity was recorded from 11 to 300 K; the result is in good agreement with a model that takes into account the energy splitting between the excitonic singlet and triplet levels. - Highlights: • The cores of the Si NWs have a layered Si/SiO{sub 2} structure. • The Si NWs were formed due to the phase separation of Si and SiO{sub 2} and the partial oxidization by residual oxygen. • Two processes, the reaction of Si and oxygen atoms and the combination between Si atoms, occur simultaneously. • The formation of the layered structures is associated with the self-limiting oxidation phenomenon in Si nanostructures.

  7. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    Hasenack, C.M.

    1986-01-01

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 1200 0 C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author) [pt

  8. Free double layers in mercury-arc discharges

    International Nuclear Information System (INIS)

    Maciel, H.S.; Allen, J.E.

    1989-01-01

    A study has been carried out of free double layers formed within the plasma volume of a low-pressure mercury-arc discharge at high current densities. The free double layer is observed to form as a visible boundary, which drifts slowly from the central section of the discharge. Current-driven instabilities are observed as the discharge current is gradually increased to a critical value, at which current limitation is observed to occur. This process, which is accompanied by high-current spikes, ceases when the free double layer becomes visible as a sharp boundary dividing the discharge column into two regions of different luminosities. The layer is observed to form in the later stages of current limitation, the onset of which occurs for a ratio of drift to thermal speed of electrons of about unity. Electrical energy is converted by the layer into kinetic energy of the changed particles. Accordingly high-energy ions were measured by means of an electrostatic energy analyser. The multiple-sheath character of the free 'double layer'', which is inferred from probe measurements of potential profiles, is discussed and comparisons with other space-charge structures with the same topology are made. (author)

  9. Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

    International Nuclear Information System (INIS)

    Zhou, Y.M.; He, M.Z.; Xie, Z.

    2014-01-01

    Highlights: • Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum. • The Ti/TaN double layers improved the adhesion with Cu thin films and showed good diffusion barrier between Cu and SiO 2 /Si up to the annealing condition. • The failure mechanism of Ti/TaN bi-layer is similar with the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si. - Abstract: Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum better than 1 × 10 −3 Pa. Ti/TaN double layers were formed on SiO 2 /Si substrates by DC magnetron sputtering and then the properties of Cu/Ti/TaN/SiO 2 /Si film stacks were studied. It was found that the Ti/TaN double layers provide good diffusion barrier between Cu and SiO 2 /Si up to 750 °C for 30 min. The XRD, Auger and EDS results show that the Cu–Si compounds like Cu 3 Si were formed by Cu diffusion through Ti/TaN barrier for the 800 °C annealed samples. It seems that the improved diffusion barrier property of Cu/Ti/TaN/SiO 2 /Si stack is due to the diffusion of nitrogen along the grain boundaries in Ti layer, which would decrease the defects in Ti film and block the diffusion path for Cu diffusion with increasing annealing temperature. The failure mechanism of Ti/TaN bi-layer is similar to the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si

  10. Observations of propagating double layers in a high current discharge

    International Nuclear Information System (INIS)

    Lindberg, L.

    1988-01-01

    Observations of current disruptions and strong electric fields along the magnetic field in a high-density (2 x 10 19 m - 3 , highly-ionized, moving, and expanding plasma column are reported. The electric field is interpreted in terms of propagating, strong electric double layers (3-5kV). An initial plasma column is formed in an axial magnetic field (0.1T) by means of a conical theta-pinch plasma gun. When an axial current (max 5kA, 3-5 kV) is drawn through the column spontaneous disruptions and double-layer formation occur within a few microseconds. Floating, secondary emitting Langmuir probes are used. They often indicate very high positive potential peaks (1-2 kV above the anode potential during a few μs) in the plasma on the positive side of the double layer. Short, intense bursts of HF radiation are detected at the disruptions

  11. Some recent trends in computer simulations of aqueous double layers

    International Nuclear Information System (INIS)

    Spohr, E.

    2003-01-01

    Recent molecular simulations of the electric double layer between an aqueous and a metallic phase are reviewed. Several trends in the field can be identified: (i) the increasing use of ab initio simulation methods, most notably the Car-Parrinello method, allows to combine a statistical mechanical description of the double layer with a description of elementary chemical processes on the electronic structure level; (ii) the application of free-energy methods in one and (recently) two dimensions to describe chemical reactivity within and beyond the framework of the Marcus theory of electron transfer; and (iii) at high concentrations, direct simulations of two-phase systems with an aqueous solution and a charged or uncharged solid phase or surface can model the entire double layer region

  12. Optical characteristics of silicon nanowires grown from tin catalyst layers on silicon coated glass

    KAUST Repository

    Ball, Jeremy

    2012-08-20

    The optical characteristics of silicon nanowires grown on Si layers on glass have been modeled using the FDTD (Finite Difference Time Domain) technique and compared with experimental results. The wires were grown by the VLS (vapour-liquid-solid) method using Sn catalyst layers and exhibit a conical shape. The resulting measured and modeled absorption, reflectance and transmittance spectra have been investigated as a function of the thickness of the underlying Si layer and the initial catalyst layer, the latter having a strong influence on wire density. High levels of absorption (>90% in the visible wavelength range) and good agreement between the modeling and experiment have been observed when the nanowires have a relatively high density of ∼4 wires/μ m2. The experimental and modeled results diverge for samples with a lower density of wire growth. The results are discussed along with some implications for solar cell fabrication. © 2012 Optical Society of America.

  13. Optical characteristics of silicon nanowires grown from tin catalyst layers on silicon coated glass

    KAUST Repository

    Ball, Jeremy; Centeno, Anthony; Mendis, Budhika G.; Reehal, H. S.; Alford, Neil

    2012-01-01

    The optical characteristics of silicon nanowires grown on Si layers on glass have been modeled using the FDTD (Finite Difference Time Domain) technique and compared with experimental results. The wires were grown by the VLS (vapour-liquid-solid) method using Sn catalyst layers and exhibit a conical shape. The resulting measured and modeled absorption, reflectance and transmittance spectra have been investigated as a function of the thickness of the underlying Si layer and the initial catalyst layer, the latter having a strong influence on wire density. High levels of absorption (>90% in the visible wavelength range) and good agreement between the modeling and experiment have been observed when the nanowires have a relatively high density of ∼4 wires/μ m2. The experimental and modeled results diverge for samples with a lower density of wire growth. The results are discussed along with some implications for solar cell fabrication. © 2012 Optical Society of America.

  14. A review of molecular modelling of electric double layer capacitors.

    Science.gov (United States)

    Burt, Ryan; Birkett, Greg; Zhao, X S

    2014-04-14

    Electric double-layer capacitors are a family of electrochemical energy storage devices that offer a number of advantages, such as high power density and long cyclability. In recent years, research and development of electric double-layer capacitor technology has been growing rapidly, in response to the increasing demand for energy storage devices from emerging industries, such as hybrid and electric vehicles, renewable energy, and smart grid management. The past few years have witnessed a number of significant research breakthroughs in terms of novel electrodes, new electrolytes, and fabrication of devices, thanks to the discovery of innovative materials (e.g. graphene, carbide-derived carbon, and templated carbon) and the availability of advanced experimental and computational tools. However, some experimental observations could not be clearly understood and interpreted due to limitations of traditional theories, some of which were developed more than one hundred years ago. This has led to significant research efforts in computational simulation and modelling, aimed at developing new theories, or improving the existing ones to help interpret experimental results. This review article provides a summary of research progress in molecular modelling of the physical phenomena taking place in electric double-layer capacitors. An introduction to electric double-layer capacitors and their applications, alongside a brief description of electric double layer theories, is presented first. Second, molecular modelling of ion behaviours of various electrolytes interacting with electrodes under different conditions is reviewed. Finally, key conclusions and outlooks are given. Simulations on comparing electric double-layer structure at planar and porous electrode surfaces under equilibrium conditions have revealed significant structural differences between the two electrode types, and porous electrodes have been shown to store charge more efficiently. Accurate electrolyte and

  15. A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Irmler, C., E-mail: christian.irmler@oeaw.ac.at [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Higuchi, T. [University of Tokyo, Kavli Institute for Physics and Mathematics of the Universe, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Ishikawa, A. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Joo, C. [Seoul National University, High Energy Physics Laboratory, 25-107 Shinlim-dong, Kwanak-gu, Seoul 151-742 (Korea, Republic of); Kah, D.H.; Kang, K.H. [Kyungpook National University, Department of Physics, 1370 Sankyuk Dong, Buk Gu, Daegu 702-701 (Korea, Republic of); Rao, K.K. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Kato, E. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Mohanty, G.B. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Negishi, K. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Onuki, Y.; Shimizu, N. [University of Tokyo, Department of Physics, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Tsuboyama, T. [KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Valentan, M. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria)

    2013-12-21

    B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO{sub 2} system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules.

  16. A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

    International Nuclear Information System (INIS)

    Irmler, C.; Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I.; Higuchi, T.; Ishikawa, A.; Joo, C.; Kah, D.H.; Kang, K.H.; Rao, K.K.; Kato, E.; Mohanty, G.B.; Negishi, K.; Onuki, Y.; Shimizu, N.; Tsuboyama, T.; Valentan, M.

    2013-01-01

    B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO 2 system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules

  17. Double layer -- a particle accelerator in the magnetosphere

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Xiangrong [Los Alamos National Laboratory

    2015-07-16

    Slides present the material under the following topics: Introduction (What is a double layer (DL)? Why is it important? Key unsolved problems); Theory -- time-independent solutions of 1D Vlasov--Poisson system; Particle-in-cell simulations (Current-driven DLs); and Electron acceleration by DL (Betatron acceleration). Key problems include the generation mechanism, stability, and electron acceleration. In summary, recent observations by Van Allen Probes show large number of DLs in the outer radiation belt, associated with enhanced flux of relativistic electrons. Simulations show that ion acoustic double layers can be generated by field-aligned currents. Thermal electrons can gain energy via betatron acceleration in a dipole magnetic field.

  18. Double layers do accelerate particles in the auroral zone

    International Nuclear Information System (INIS)

    Borovsky, J.E.

    1992-01-01

    In response to a recent report [D. A. Bryant, R. Bingham, and U. de Angelis, Phys. Rev. Lett. 68, 37 (1991)] that makes the claim that electrostatic fields are weak in the auroral zone and that electrostatic fields cannot accelerate particles, it is pointed out that the evidence for electrostatic fields in the auroral zone is overwhelming and that these electrostatic fields often are accelerating electrons to produce aurora. The literature cited in the article above as evidence against double layers (strong electric fields) is reexamined and is found not to be evidence against double layers

  19. Circuit effects on pierce instabilities, and double-layer formation

    International Nuclear Information System (INIS)

    Raadu, M.A.; Silevitch, M.B.

    1982-11-01

    The role of the Pierce instability in the formation of double layers is considered and compared with that of the Buneman instability. Pierce instabilities have been identified in a double-layer experiment, where they lead to ion trapping. Here the effects of external circuit elements are considered. In the case of immobile ions the onset criteria are unaffected, but in the unstable range the growth rate is reduced by the external impedance. Required experimental values of the circuit elements are estimated. The possible relevance to computer simulations is noted. (Authors)

  20. DOUBLE BOSS SCULPTURED DIAPHRAGM EMPLOYED PIEZORESISTIVE MEMS PRESSURE SENSOR WITH SILICON-ON-INSULATOR (SOI

    Directory of Open Access Journals (Sweden)

    D. SINDHANAISELVI

    2017-07-01

    Full Text Available This paper presents the detailed study on the measurement of low pressure sensor using double boss sculptured diaphragm of piezoresistive type with MEMS technology in flash flood level measurement. The MEMS based very thin diaphragms to sense the low pressure is analyzed by introducing supports to achieve linearity. The simulation results obtained from Intellisuite MEMS CAD design tool show that very thin diaphragms with rigid centre or boss give acceptable linearity. Further investigations on very thin diaphragms embedded with piezoresistor for low pressure measurement show that it is essential to analyse the piezoresistor placement and size of piezoresistor to achieve good sensitivity. A modified analytical modelling developed in this study for double boss sculptured diaphragm results were compared with simulated results. Further the enhancement of sensitivity is analyzed using non uniform thickness diaphragm and Silicon-On-Insulator (SOI technique. The simulation results indicate that the double boss square sculptured diaphragm with SOI layer using 0.85μm thickness yields the higher voltage sensitivity, acceptable linearity with Small Scale Deflection.

  1. Layer-by-layer self-assembly of polyimide precursor/layered double hydroxide ultrathin films

    International Nuclear Information System (INIS)

    Chen Dan; Huang Shu; Zhang Chao; Wang Weizhi; Liu Tianxi

    2010-01-01

    The layer-by-layer (LBL) self-assembly has been extensively used as a simple and effective method for the preparation of polyelectrolyte multilayer films. In this work, we utilized this unique method to prepare polyimide precursor/layered double hydroxide (LDH) ultrathin films. Well-crystallized Co-Al-CO 3 LDH and subsequent anion exchanged Co-Al-NO 3 LDH were prepared and characterized by scanning electron microscopy and X-ray diffraction (XRD). By vigorous shaking of the as-prepared Co-Al-NO 3 LDH, positively charged and exfoliated LDH nanosheets were obtained. Atomic force microscopy and XRD investigations indicated the delamination of LDH nanosheets. The precursor of polyimide, poly(amic acid) tertiary amine salt (PAS) was prepared by the polycondensation of dianhydride and diamine, and subsequent amine salt formation. By using the LBL method, heterogeneous ultrathin films of PAS and LDH were prepared. The formation of the ordered nanostructured assemblies was confirmed by the progressive enhancement of UV absorbance and the XRD results.

  2. Single-layer graphene on silicon nitride micromembrane resonators

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja [Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345 East, 2800 Kongens Lyngby (Denmark); Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S. [QUANTOP, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Taylor, Jacob M. [Joint Quantum Institute/NIST, College Park, Maryland 20899 (United States); Herring, Patrick K.; Cassidy, Maja C. [School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138 (United States); Marcus, Charles M. [Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Cheol Shin, Yong; Kong, Jing [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-02-07

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

  3. Single Layered Versus Double Layered Intestinal Anastomosis: A Randomized Controlled Trial

    Science.gov (United States)

    Mohapatra, Vandana; Singh, Surendra; Rath, Pratap Kumar; Behera, Tapas Ranjan

    2017-01-01

    Introduction Gastrointestinal anastomosis is one of the most common procedures being performed in oesophagogastric, hepatobiliary, bariatric, small bowel and colorectal surgery; however, the safety and efficacy of single layer or double layer anastomotic technique is still unclear. Aim To assess and compare the efficacy, safety and cost effectiveness of single layered versus double layered intestinal anastomosis. Materials and Methods This prospective, double-blind, randomized controlled comparative study comprised of patients who underwent intestinal resection and anastomosis. They were randomly assigned to undergo either single layered extra-mucosal anastomosis (Group-A) or double layered intestinal anastomosis (Group-B). Primary outcome measures included average time taken for anastomosis, postoperative complications, mean duration of hospital stay and cost of suture material used; secondary outcome measures assessed the postoperative return of bowel function. Statistical analysis was done by Chi-square test and student t-test. Results A total of 97 participants were randomized. Fifty patients were allocated to single layered extramucosal continuous anastomosis (Group-A) and 47 patients to double layered anastomosis (Group-B). The patients in each group were well matched for age, sex and diagnosis. The mean time taken for anastomosis (15.12±2.27 minutes in Group-A versus 24.38±2.26 minutes in Group-B) and the length of hospital stay (5.90±1.43 days in Group-A versus 7.29±1.89 days in Group-B) was significantly shorter in Group-A {p-value anastomosis. However, there was no significant difference in the complication rates between the two groups. Conclusion It can be concluded that single layered extramucosal continuous intestinal anastomosis is equally safe and perhaps more cost effective than the conventional double layered method and may represent the optimal choice for routine surgical practice. PMID:28764239

  4. Defects and defect generation in oxide layer of ion implanted silicon-silicon dioxide structures

    CERN Document Server

    Baraban, A P

    2002-01-01

    One studies mechanism of generation of defects in Si-SiO sub 2 structure oxide layer as a result of implantation of argon ions with 130 keV energy and 10 sup 1 sup 3 - 3.2 x 10 sup 1 sup 7 cm sup - sup 2 doses. Si-SiO sub 2 structures are produced by thermal oxidation of silicon under 950 deg C temperature. Investigations were based on electroluminescence technique and on measuring of high-frequency volt-farad characteristics. Increase of implantation dose was determined to result in spreading of luminosity centres and in its maximum shifting closer to boundary with silicon. Ion implantation was shown, as well, to result in increase of density of surface states at Si-SiO sub 2 interface. One proposed model of defect generation resulting from Ar ion implantation into Si-SiO sub 2

  5. Mechanical properties of silicon in subsurface damage layer from nano-grinding studied by atomistic simulation

    Science.gov (United States)

    Zhang, Zhiwei; Chen, Pei; Qin, Fei; An, Tong; Yu, Huiping

    2018-05-01

    Ultra-thin silicon wafer is highly demanded by semi-conductor industry. During wafer thinning process, the grinding technology will inevitably induce damage to the surface and subsurface of silicon wafer. To understand the mechanism of subsurface damage (SSD) layer formation and mechanical properties of SSD layer, atomistic simulation is the effective tool to perform the study, since the SSD layer is in the scale of nanometer and hardly to be separated from underneath undamaged silicon. This paper is devoted to understand the formation of SSD layer, and the difference between mechanical properties of damaged silicon in SSD layer and ideal silicon. With the atomistic model, the nano-grinding process could be performed between a silicon workpiece and diamond tool under different grinding speed. To reach a thinnest SSD layer, nano-grinding speed will be optimized in the range of 50-400 m/s. Mechanical properties of six damaged silicon workpieces with different depths of cut will be studied. The SSD layer from each workpiece will be isolated, and a quasi-static tensile test is simulated to perform on the isolated SSD layer. The obtained stress-strain curve is an illustration of overall mechanical properties of SSD layer. By comparing the stress-strain curves of damaged silicon and ideal silicon, a degradation of Young's modulus, ultimate tensile strength (UTS), and strain at fracture is observed.

  6. Mechanical properties of silicon in subsurface damage layer from nano-grinding studied by atomistic simulation

    Directory of Open Access Journals (Sweden)

    Zhiwei Zhang

    2018-05-01

    Full Text Available Ultra-thin silicon wafer is highly demanded by semi-conductor industry. During wafer thinning process, the grinding technology will inevitably induce damage to the surface and subsurface of silicon wafer. To understand the mechanism of subsurface damage (SSD layer formation and mechanical properties of SSD layer, atomistic simulation is the effective tool to perform the study, since the SSD layer is in the scale of nanometer and hardly to be separated from underneath undamaged silicon. This paper is devoted to understand the formation of SSD layer, and the difference between mechanical properties of damaged silicon in SSD layer and ideal silicon. With the atomistic model, the nano-grinding process could be performed between a silicon workpiece and diamond tool under different grinding speed. To reach a thinnest SSD layer, nano-grinding speed will be optimized in the range of 50-400 m/s. Mechanical properties of six damaged silicon workpieces with different depths of cut will be studied. The SSD layer from each workpiece will be isolated, and a quasi-static tensile test is simulated to perform on the isolated SSD layer. The obtained stress-strain curve is an illustration of overall mechanical properties of SSD layer. By comparing the stress-strain curves of damaged silicon and ideal silicon, a degradation of Young’s modulus, ultimate tensile strength (UTS, and strain at fracture is observed.

  7. Effect of p-layer properties on nanocrystalline absorber layer and thin film silicon solar cells

    International Nuclear Information System (INIS)

    Chowdhury, Amartya; Adhikary, Koel; Mukhopadhyay, Sumita; Ray, Swati

    2008-01-01

    The influence of the p-layer on the crystallinity of the absorber layer and nanocrystalline silicon thin film solar cells has been studied. Boron doped Si : H p-layers of different crystallinities have been prepared under different power pressure conditions using the plasma enhanced chemical vapour deposition method. The crystalline volume fraction of p-layers increases with the increase in deposition power. Optical absorption of the p-layer reduces as the crystalline volume fraction increases. Structural studies at the p/i interface have been done by Raman scattering studies. The crystalline volume fraction of the i-layer increases as that of the p-layer increases, the effect being more prominent near the p/i interface. Grain sizes of the absorber layer decrease from 9.2 to 7.2 nm and the density of crystallites increases as the crystalline volume fraction of the p-layer increases and its grain size decreases. With increasing crystalline volume fraction of the p-layer solar cell efficiency increases

  8. Double-layer Tablets of Lornoxicam: Validation of Quantification ...

    African Journals Online (AJOL)

    Purpose: To formulate double-layer tablets of lornoxicam (LRX) prepared by direct compression method and ... including direct compression method which is ..... Mechanisms of potassium chloride release from compressed, hydrophilic, polymeric matrices: effect of entrapped air. J Pharm Sci 1983; 72(10): 1189-1191. 17.

  9. Double layer effects in the electroreduction of transition metal ions

    Czech Academy of Sciences Publication Activity Database

    Fawcett, W. R.; Hromadová, Magdaléna

    2008-01-01

    Roč. 12, č. 4 (2008), s. 347-351 ISSN 1432-8488 R&D Projects: GA AV ČR KJB400400603; GA MŠk LC510 Institutional research plan: CEZ:AV0Z40400503 Keywords : sphere electrode reactions * crystal gold electrodes * diffuse double - layer Subject RIV: CG - Electrochemistry Impact factor: 1.597, year: 2008

  10. Application of Electric Double Layer Capacitor for Solar Car

    OpenAIRE

    中西, 弘一; 岸, 純男; 仲森, 昌也; 荒賀, 浩一

    2016-01-01

    This paper describes a method for efficient work of electrical energy, using DC-DC converter as insulate between battery and Electrical Double Layer Capacitor (EDLC). In case of constant-current charge to the EDLC, the efficiency of the electric power is higher, compared to the constant-voltage charge.

  11. Double-layer Tablets of Lornoxicam: Validation of Quantification ...

    African Journals Online (AJOL)

    Double-layer Tablets of Lornoxicam: Validation of Quantification Method, In vitro Dissolution and Kinetic Modelling. ... Satisfactory results were obtained from all the tablet formulations met compendial requirements. The slowest drug release rate was obtained with tablet cores based on PVP K90 (1.21 mg%.h-1).

  12. Interaction of pristine hydrotalcite-like layered double hydroxides ...

    Indian Academy of Sciences (India)

    Metal oxides in general have surface acidic sites, but for exceptional circumstances, are not expected to mineralize CO2. Given their intrinsic basicity and an expandable interlayer gallery, the hydrotalcite-like layered double hydroxides (LDHs) are expected to be superior candidate materials for CO2 mineralization.

  13. Damping of double wall panels including a viscothermal air layer

    NARCIS (Netherlands)

    Basten, T.G.H.; Stainhaouer, G.; Bakamidis, S.; Charalabopoulou, F.

    2001-01-01

    This paper deals with the dynamic behaviour of double wall panels, with emphasis on damping and sound radiation. It will be shown that a narrow air layer separating the two plates of a panel significantly alters the mentioned quantities by its viscothermal properties. Numerical and experimental

  14. On the magnetism of Heisenberg double-layer antiferromagnets

    International Nuclear Information System (INIS)

    Uijen, C.M.J. van.

    1980-01-01

    The author investigates the sublattice magnetization and the susceptibility of the double-layer Heisenberg antiferromagnet K 3 M 2 F 7 by employing the techniques of elastic and quasi-elastic critical magnetic scattering of neutrons. (G.T.H.)

  15. Electric-double-layer potential distribution in multiple-layer immiscible electrolytes

    NARCIS (Netherlands)

    Das, S.; Hardt, Steffen

    2011-01-01

    In this Brief Report, we calculate the electric-double-layer (EDL) electrostatic potential in a system of several layers of immiscible electrolytes. Verwey-Niessen theory predicts that at the interface between two immiscible electrolytes back-to-back EDLs are formed. The present analysis extends

  16. Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

    International Nuclear Information System (INIS)

    Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.

    1997-12-01

    Epitaxial grown thick layers (≥ 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 x 10 12 cm -3 ) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E p = 24 GeV) with a fluence of 1.5 x 10 11 cm -2 , no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ''sinking'' process, however, becomes non-effective at high radiation fluences (10 14 cm -2 ) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 x 10 14 cm -2 the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 x 10 12 cm -3 after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon

  17. Double and triple crystal diffraction investigation on ion implanted and electron beam annealed silicon

    International Nuclear Information System (INIS)

    Servidori, M.; Cembali, F.; Winter, U.; Zaumseil, P.; Richter, H.

    1985-01-01

    Double (DCD) and triple crystal (TCD) diffractometry was used to investigate radiation damage produced in silicon by silicon bombardment and its evolution after electron beam annealing. The implantation processes were carried out at 60 keV energy and at doses of 0.5, 1, 5, 10, 50, 100, and 200 x 10 13 ions/cm 2 . As to the annealing treatments, an electron gun was used, operating in the ranges 7.5 to 24 W/cm 2 and 2 to 20 seconds. DCD rocking curves were analyzed by means of the dynamical theory of X-ray diffraction. The formalism introduced by Taupin was used to simulate the experimental intensity profiles. From the resulting best fits, the lattice strain vs. depth profiles were obtained, indicating an increase of the damage with dose for the as-implanted samples up to 1 x 10 14 cm -2 dose, whereas amorphous layers are produced for the higher doses. After annealing, lowering of the residual strain was observed to be directly proportional to the implanted dose. In particular, a complete recovery of the damage occurred for the 0.5 and 1 x 10 13 cm -2 samples. The results obtained by the fitting procedure were substantially independent from the power densities and times used during electron beam irradiation. TCD as a very sensitive method to investigate lattice defects after implantation was used to obtain information about the crystallographic perfection of the surface layer. The absence of diffuse scattering indicates that the annealed layers do not contain microdefects within the detection limits. (author)

  18. Implanted Silicon Resistor Layers for Efficient Terahertz Absorption

    Science.gov (United States)

    Chervenak, J. A.; Abrahams, J.; Allen, C. A.; Benford, D. J.; Henry, R.; Stevenson, T.; Wollack, E.; Moseley, S. H.

    2005-01-01

    Broadband absorption structures are an essential component of large format bolometer arrays for imaging GHz and THz radiation. We have measured electrical and optical properties of implanted silicon resistor layers designed to be suitable for these absorbers. Implanted resistors offer a low-film-stress, buried absorber that is robust to longterm aging, temperature, and subsequent metals processing. Such an absorber layer is readily integrated with superconducting integrated circuits and standard micromachining as demonstrated by the SCUBA II array built by ROE/NIST (1). We present a complete characterization of these layers, demonstrating frequency regimes in which different recipes will be suitable for absorbers. Single layer thin film coatings have been demonstrated as effective absorbers at certain wavelengths including semimetal (2,3), thin metal (4), and patterned metal films (5,6). Astronomical instrument examples include the SHARC II instrument is imaging the submillimeter band using passivated Bi semimetal films and the HAWC instrument for SOFIA, which employs ultrathin metal films to span 1-3 THz. Patterned metal films on spiderweb bolometers have also been proposed for broadband detection. In each case, the absorber structure matches the impedance of free space for optimal absorption in the detector configuration (typically 157 Ohms per square for high absorption with a single or 377 Ohms per square in a resonant cavity or quarter wave backshort). Resonant structures with -20% bandwidth coupled to bolometers are also under development; stacks of such structures may take advantage of instruments imaging over a wide band. Each technique may enable effective absorbers in imagers. However, thin films tend to age, degrade or change during further processing, can be difficult to reproduce, and often exhibit an intrinsic granularity that creates complicated frequency dependence at THz frequencies. Thick metal films are more robust but the requirement for

  19. Low-stress silicon nitride layers for MEMS applications

    Science.gov (United States)

    Iliescu, Ciprian; Wei, Jiashen; Chen, Bangtao; Ong, Poh Lam; Tay, Francis E. H.

    2006-12-01

    The paper presents two deposition methods for generation of SiN x layers with "zero" residual stress in PECVD reactors: mixed frequency and high power in high frequency mode (13.56 MHz). Traditionally, mix frequency mode is commonly used to produce low stress SiN x layers, which alternatively applies the HF and LF mode. However, due to the low deposition rate of LF mode, the combined deposition rate of mix frequency is quite small in order to produce homogenous SiN x layers. In the second method, a high power which was up to 600 W has been used, may also produce low residual stress (0-20 MPa), with higher deposition rate (250 to 350 nm/min). The higher power not only leads to higher dissociation rates of gases which results in higher deposition rates, but also brings higher N bonding in the SiN x films and higher compressive stress from higher volume expansion of SiN x films, which compensates the tensile stress and produces low residual stress. In addition, the paper investigates the influence of other important parameters which have great impact to the residual stress and deposition rates, such as reactant gases flow rate and pressure. By using the final optimized recipe, masking layer for anisotropic wet etching in KOH and silicon nitride cantilever have been successfully fabricated based on the low stress SiN x layers. Moreover, nanoporous membrane with 400nm pores has also been fabricated and tested for cell culture. By cultivating the mouse D1 mesenchymal stem cells on top of the nanoporous membrane, the results showed that mouse D1 mesenchymal stem cells were able to grow well. This shows that the nanoporous membrane can be used as the platform for interfacing with living cells to become biocapsules for biomolecular separation.

  20. Polyenergy ion beam synthesis of buried oxynitride layer in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Barabanenkov, M.Yu. E-mail: barab@ipmt-hpm.ac.ru; Agafonov, Yu.A.; Mordkovich, V.N.; Pustovit, A.N.; Vyatkin, A.F.; Zinenko, V.I

    2000-11-01

    The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with doses of 1.5 and 4.5x10{sup 17} cm{sup -2}, respectively, at fixed oxygen ion energy of 150 keV and nitrogen ion energies varied from 80 to 180 keV. The samples annealed at 1200 deg C for 2 h were analysed by secondary ion mass spectroscopy (SIMS). Theoretically, a `diffusion-alternative sinks' model is applied to the annealing stage of ion beam synthesis of a buried layer of a new phase in solids. It is shown that the maximum of the ternary phase production is attained when nitrogen ions are implanted deeper than oxygen ions. An explanation of this fact is given in terms of that (i) the segregation of oxygen and nitrogen species on the surface of oxide nuclei removes the kinetic restriction of nuclei growth, characteristic of oxide growth, at the expense of only oxygen atoms, and (ii) the higher the implantation energy the smoother the shape of ion range distribution in the target, which, in its turn, causes the predominance of the impurity sink over the impurity diffusion.

  1. Polyenergy ion beam synthesis of buried oxynitride layer in silicon

    International Nuclear Information System (INIS)

    Barabanenkov, M.Yu.; Agafonov, Yu.A.; Mordkovich, V.N.; Pustovit, A.N.; Vyatkin, A.F.; Zinenko, V.I.

    2000-01-01

    The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with doses of 1.5 and 4.5x10 17 cm -2 , respectively, at fixed oxygen ion energy of 150 keV and nitrogen ion energies varied from 80 to 180 keV. The samples annealed at 1200 deg C for 2 h were analysed by secondary ion mass spectroscopy (SIMS). Theoretically, a `diffusion-alternative sinks' model is applied to the annealing stage of ion beam synthesis of a buried layer of a new phase in solids. It is shown that the maximum of the ternary phase production is attained when nitrogen ions are implanted deeper than oxygen ions. An explanation of this fact is given in terms of that (i) the segregation of oxygen and nitrogen species on the surface of oxide nuclei removes the kinetic restriction of nuclei growth, characteristic of oxide growth, at the expense of only oxygen atoms, and (ii) the higher the implantation energy the smoother the shape of ion range distribution in the target, which, in its turn, causes the predominance of the impurity sink over the impurity diffusion

  2. Photonic intermediate layer for silicon tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bielawny, Andreas; Miclea, Paul-Tiberiu; Wehrspohn, Ralf [Martin-Luther Universitaet Halle-Wittenberg (Germany). Inst. fuer Physik, Mikro-MD; Lee, Seuong-Mo; Knez, Mato [Max-Planck-Inst. fuer Mikrostrukturphysik, Halle (Germany); Carius, Reinhard [Forschungszentrum Juelich (DE). Inst. fuer Photovoltaik (IEF-5); Lisca, Marian; Rockstuhl, Carsten; Lederer, Falk [Universitaet Jena (Germany). Dept. Physik

    2008-07-01

    The concept of incorporation of a 3D photonic crystal as diffractive spectral filter within a-Si/mc-Si tandem solar cells has been investigated as a promising application. Our intermediate reflective filter enhances the pathway of spectrally selected light within an amorphous silicon top cell in its spectral region of low absorption. From our previous work, we expect a significant improvement of the tandem's efficiency of about 1.2%(absolute). This increases efficiency for a typical silicon tandem cell from 11.2% to 12.4%, as a result of the optical current-matching of the two junctions. Our wavelength-selective optical element is a 3D-structured optical thin-film - prepared by self-organized artificial opal templates and finalized with atomic layer deposition techniques. The resulting samples are highly periodical thin-film inverted opals made of zinc-oxide. We compare recent experimental data on the optical properties with our simulations and photonic bandstructure calculations.

  3. Bovine serum albumin adsorption on passivated porous silicon layers

    Science.gov (United States)

    Lockwood, David; Boukherroub, Rabah

    2005-03-01

    Hydrogen-terminated porous silicon (pSi) films were fabricated through electrochemical anodization of crystalline Si in HF-based solutions. The pSi-H surface was chemically functionalized by thermal reaction with undecylenic acid to produce an organic monolayer covalently attached to the silicon surface through Si-C bonds and bearing an acid terminal group. Bovine serum albumin (BSA) was then adsorbed onto the modified surface. SEM showed that the porous films were damaged and partially lifted off the Si substrate after a prolonged BSA adsorption. Ellipsometry revealed that the BSA had penetrated ˜ 1.3 micrometers into the porous structure. The film damage results from BSA anchoring itself tightly through strong electrostatic interactions to the acid-covered Si sidewalls. A change in surface tension during BSA film formation then causes the pSi layer to buckle and lift-off the underlying Si substrate. FTIR results from the modified pSi surfaces showed the presence of strong characteristic Amide I, II and III vibrational bands after BSA adsorption.

  4. Influence of polycrystalline silicon layer on flow through «metal — p-Si» contact

    Directory of Open Access Journals (Sweden)

    Smyntyna V. A.

    2011-11-01

    Full Text Available Based on the results of investigations of charge transport in the "metal — p-Si" contacts with different thickness of polycrystalline p-Si layer the mechanisms of charge transport through such structures are shown. It is established that with increasing thickness of the layer of polycrystalline p-Si current transport mechanism changes from a double injection into the drift-diffusion. This change is due to an increase in the drift current component in the space charge zone of "metal — p-Si" contact, which arises as a result of increased surface density of scattering barriers, which are localized at the boundaries of neighboring silicon polycrystals.

  5. Patch holography using a double layer microphone array

    DEFF Research Database (Denmark)

    Gomes, Jesper Skovhus

    a closed local element mesh that surrounds the microphone array, and with a part of the mesh coinciding with a patch, the entire source is not needed in the model. Since the array has two layers, sources/reflections behind the array are also allowed. The Equivalent Source Method (ESM) is another technique...... in which the sound field is represented by a set of monopoles placed inside the source. In this paper these monopoles are distributed so that they surround the array, and the reconstruction is compared with the IBEM-based approach. The comparisons are based on computer simulations with a planar double...... layer array and sources with different shapes....

  6. Double layers in a modestly collisional electronegative discharge

    CERN Document Server

    Sheridan, T E

    1999-01-01

    The effect of ion-neutral collisions on the structure and ion flux emanating from a steady-state, planar discharge with two negative components is investigated. The positive ion component is modelled as a cold fluid subject to constant-mobility collisions, while the electrons and negative ions obey Boltzmann relations. The model includes the collisionless limit. When the negative ions are sufficiently cold three types of discharge structures are found. For small negative ion concentrations or high collisionality, the discharge is 'stratified', with an electronegative core and an electropositive edge. For the opposite conditions, the discharge is 'uniform' with the negative ion density remaining significant at the edge of the plasma. Between these cases lies the special case of a double-layer-stratified discharge, where quasi-neutrality is violated at the edge of the electronegative core. Double-layer-stratified solutions are robust in that they persist for moderate collisionality. Numerical solutions for fini...

  7. Apparatus and method of manufacture for depositing a composite anti-reflection layer on a silicon surface

    Science.gov (United States)

    Pain, Bedabrata (Inventor)

    2012-01-01

    An apparatus and associated method are provided. A first silicon layer having at least one of an associated passivation layer and barrier is included. Also included is a composite anti-reflection layer including a stack of layers each with a different thickness and refractive index. Such composite anti-reflection layer is disposed adjacent to the first silicon layer.

  8. DEPTH MEASUREMENT OF DISRUPTED LAYER ON SILICON WAFER SURFACE USING AUGER SPECTROSCOPY METHOD

    Directory of Open Access Journals (Sweden)

    V. A. Solodukha

    2016-01-01

    Full Text Available The paper proposes a method for depth measurement of a disrupted layer on silicon wafer surface which is based on application of Auger spectroscopy with the precision sputtering of surface silicon layers and registration of the Auger electron yield intensity. In order to measure the disrupted layer with the help of Auger spectroscopy it is necessary to determine dependence of the released Auger electron amount on sputtering time (profile and then the dependence is analyzed. Silicon amount in the disrupted layer is less than in the volume. While going deeper the disruptive layer is decreasing that corresponds to an increase of atom density in a single layer. The essence of the method lies in the fact the disruptive layer is removed by ion beam sputtering and detection of interface region is carried out with the help of registration of the Auger electron yield intensity from the sputtered surface up to the moment when it reaches the value which is equal to the Auger electron yield intensity for single-crystal silicon. While removing surface silicon layers the registration of the Auger electron yield intensity from silicon surface makes it possible to control efficiently a presence of the disrupted layer on the silicon wafer surface. In this case depth control locality is about 1.0 nm due to some peculiarities of Auger spectroscopy method. The Auger electron yield intensity is determined automatically while using Auger spectrometer and while removing the disrupted layer the intensity is gradually increasing. Depth of the disrupted layer is determined by measuring height of the step which has been formed as a result of removal of the disrupted layer from the silicon wafer surface. Auger spectroscopy methods ensures an efficient depth control surface disruptions at the manufacturing stages of silicon wafers and integrated circuits. The depth measurement range of disruptions constitutes 0.001–1.000 um.

  9. Electrostatic supersolitons and double layers at the acoustic speed

    International Nuclear Information System (INIS)

    Verheest, Frank; Hellberg, Manfred A.

    2015-01-01

    Supersolitons are characterized by subsidiary extrema on the sides of a typical bipolar electric field signature or by association with a root beyond double layers in the fully nonlinear Sagdeev pseudopotential description. It has been proven that supersolitons may exist in several plasmas having at least three constituent species, but they cannot be found in weakly nonlinear theory. Another recent aspect of pseudopotential theory is that in certain plasma models and parameter regimes solitons and/or double layers can exist at the acoustic speed, having no reductive perturbation counterparts. Importantly, they signal coexistence between solitons having positive and negative polarity, in that one solution can be realized at a time, depending on infinitesimal perturbations from the equilibrium state. Weaving the two strands together, we demonstrate here that one can even find supersolitons and double layers at the acoustic speed, as illustrated using the model of cold positive and negative ions, in the presence of nonthermal electrons following a Cairns distribution. This model has been discussed before, but the existence and properties of supersolitons at the acoustic speed were not established at the time of publication

  10. Electrostatic supersolitons and double layers at the acoustic speed

    Energy Technology Data Exchange (ETDEWEB)

    Verheest, Frank, E-mail: frank.verheest@ugent.be [Sterrenkundig Observatorium, Universiteit Gent, Krijgslaan 281, B–9000 Gent (Belgium); School of Chemistry and Physics, University of KwaZulu-Natal, Durban 4000 (South Africa); Hellberg, Manfred A., E-mail: hellberg@ukzn.ac.za [School of Chemistry and Physics, University of KwaZulu-Natal, Durban 4000 (South Africa)

    2015-01-15

    Supersolitons are characterized by subsidiary extrema on the sides of a typical bipolar electric field signature or by association with a root beyond double layers in the fully nonlinear Sagdeev pseudopotential description. It has been proven that supersolitons may exist in several plasmas having at least three constituent species, but they cannot be found in weakly nonlinear theory. Another recent aspect of pseudopotential theory is that in certain plasma models and parameter regimes solitons and/or double layers can exist at the acoustic speed, having no reductive perturbation counterparts. Importantly, they signal coexistence between solitons having positive and negative polarity, in that one solution can be realized at a time, depending on infinitesimal perturbations from the equilibrium state. Weaving the two strands together, we demonstrate here that one can even find supersolitons and double layers at the acoustic speed, as illustrated using the model of cold positive and negative ions, in the presence of nonthermal electrons following a Cairns distribution. This model has been discussed before, but the existence and properties of supersolitons at the acoustic speed were not established at the time of publication.

  11. Inverted amorphous silicon solar cell utilizing cermet layers

    Science.gov (United States)

    Hanak, Joseph J.

    1979-01-01

    An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

  12. The design and performance of the nano-carbon based double layers flexible coating for tunable and high-efficiency microwave absorption

    Science.gov (United States)

    Zhang, Danfeng; Hao, Zhifeng; Qian, Yannan; Zeng, Bi; Zhu, Haiping; Wu, Qibai; Yan, Chengjie; Chen, Muyu

    2018-05-01

    Nanocarbon-based materials are outstanding microwave absorbers with good dielectric properties. In this study, double-layer silicone resin flexible absorbing coatings, composed of carbon-coated nickel nanoparticles (Ni@C) and carbon nanotubes (CNTs), with low loading and a total thickness of 2 mm, were prepared. The reflection loss (RL) of the double-layer absorbing coatings has measured for frequencies between 2 and 18 GHz using the Arch reflecting testing method. The effects of the thickness and electromagnetic parameters of each layer and of the layer sequence on the absorbing properties were investigated. It is found that the measured bandwidth (RL ≤ - 10 dB) of the optimum double-layer structure in our experiment range achieves 3.70 GHz. The results indicated that the double coating structure composed of different materials has greater synergistic absorption effect on impedance matching than that of same materials with different loading. The maximum RL of S1 (5 wt% CNTs)/S3 (60 wt% Ni@C) double-layer absorbing coating composed of different materials (S1 and S3) was larger than the one achieved using either S1 or S3 alone with the same thickness. This was because double-layer coating provided a suitable matching layer and improve the interfacial impedance. It was also shown that absorbing peak value and frequency position can be adjusted by double-layer coating structure.

  13. On the photon annealing of silicon-implanted gallium-nitride layers

    International Nuclear Information System (INIS)

    Seleznev, B. I.; Moskalev, G. Ya.; Fedorov, D. G.

    2016-01-01

    The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.

  14. Single-particle thermal diffusion of charged colloids: Double-layer theory in a temperature gradient

    NARCIS (Netherlands)

    Dhont, J.K.G.; Briels, Willem J.

    2008-01-01

    The double-layer contribution to the single-particle thermal diffusion coefficient of charged, spherical colloids with arbitrary double-layer thickness is calculated and compared to experiments. The calculation is based on an extension of the Debye-Hückel theory for the double-layer structure that

  15. Electron spin resonance and spin-valley physics in a silicon double quantum dot.

    Science.gov (United States)

    Hao, Xiaojie; Ruskov, Rusko; Xiao, Ming; Tahan, Charles; Jiang, HongWen

    2014-05-14

    Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.

  16. Preliminary Study on Biosynthesis of Bacterial Nanocellulose Tubes in a Novel Double-Silicone-Tube Bioreactor for Potential Vascular Prosthesis

    Directory of Open Access Journals (Sweden)

    Feng Hong

    2015-01-01

    Full Text Available Bacterial nanocellulose (BNC has demonstrated a tempting prospect for applications in substitute of small blood vessels. However, present technology is inefficient in production and BNC tubes have a layered structure that may bring danger after implanting. Double oxygen-permeable silicone tubes in different diameters were therefore used as a tube-shape mold and also as oxygenated supports to construct a novel bioreactor for production of the tubular BNC materials. Double cannula technology was used to produce tubular BNC via cultivations with Acetobacter xylinum, and Kombucha, a symbiosis of acetic acid bacteria and yeasts. The results indicated that Kombucha gave higher yield and productivity of BNC than A. xylinum. Bacterial nanocellulose was simultaneously synthesized both on the inner surface of the outer silicone tube and on the outer surface of the inner silicone tube. Finally, the nano BNC fibrils from two directions formed a BNC tube with good structural integrity. Scanning electron microscopy inspection showed that the tubular BNC had a multilayer structure in the beginning but finally it disappeared and an intact BNC tube formed. The mechanical properties of BNC tubes were comparable with the reported value in literatures, demonstrating a great potential in vascular implants or in functional substitutes in biomedicine.

  17. Preliminary Study on Biosynthesis of Bacterial Nanocellulose Tubes in a Novel Double-Silicone-Tube Bioreactor for Potential Vascular Prosthesis.

    Science.gov (United States)

    Hong, Feng; Wei, Bin; Chen, Lin

    2015-01-01

    Bacterial nanocellulose (BNC) has demonstrated a tempting prospect for applications in substitute of small blood vessels. However, present technology is inefficient in production and BNC tubes have a layered structure that may bring danger after implanting. Double oxygen-permeable silicone tubes in different diameters were therefore used as a tube-shape mold and also as oxygenated supports to construct a novel bioreactor for production of the tubular BNC materials. Double cannula technology was used to produce tubular BNC via cultivations with Acetobacter xylinum, and Kombucha, a symbiosis of acetic acid bacteria and yeasts. The results indicated that Kombucha gave higher yield and productivity of BNC than A. xylinum. Bacterial nanocellulose was simultaneously synthesized both on the inner surface of the outer silicone tube and on the outer surface of the inner silicone tube. Finally, the nano BNC fibrils from two directions formed a BNC tube with good structural integrity. Scanning electron microscopy inspection showed that the tubular BNC had a multilayer structure in the beginning but finally it disappeared and an intact BNC tube formed. The mechanical properties of BNC tubes were comparable with the reported value in literatures, demonstrating a great potential in vascular implants or in functional substitutes in biomedicine.

  18. Preliminary Study on Biosynthesis of Bacterial Nanocellulose Tubes in a Novel Double-Silicone-Tube Bioreactor for Potential Vascular Prosthesis

    Science.gov (United States)

    Wei, Bin; Chen, Lin

    2015-01-01

    Bacterial nanocellulose (BNC) has demonstrated a tempting prospect for applications in substitute of small blood vessels. However, present technology is inefficient in production and BNC tubes have a layered structure that may bring danger after implanting. Double oxygen-permeable silicone tubes in different diameters were therefore used as a tube-shape mold and also as oxygenated supports to construct a novel bioreactor for production of the tubular BNC materials. Double cannula technology was used to produce tubular BNC via cultivations with Acetobacter xylinum, and Kombucha, a symbiosis of acetic acid bacteria and yeasts. The results indicated that Kombucha gave higher yield and productivity of BNC than A. xylinum. Bacterial nanocellulose was simultaneously synthesized both on the inner surface of the outer silicone tube and on the outer surface of the inner silicone tube. Finally, the nano BNC fibrils from two directions formed a BNC tube with good structural integrity. Scanning electron microscopy inspection showed that the tubular BNC had a multilayer structure in the beginning but finally it disappeared and an intact BNC tube formed. The mechanical properties of BNC tubes were comparable with the reported value in literatures, demonstrating a great potential in vascular implants or in functional substitutes in biomedicine. PMID:26090420

  19. CoCr/NiFe double layers studied by FMR and VSM

    NARCIS (Netherlands)

    Stam, M.T.H.C.W.; Gerritsma, G.J.; Lodder, J.C.; Popma, T.J.A.

    1987-01-01

    CoCr/NiFe double layers were investigated by FMR and VSM. The FMR linewidth of NiFe of the double layer is about twice that of a single NiFe layer. The resonance field is the same in both cases. Using the VSM the coercive field of the CoCr layer of the double layer was obtained. It is approximately

  20. Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

    Science.gov (United States)

    Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

    2018-03-01

    Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

  1. Evolution of plasma double layers in laser-ablation plumes

    International Nuclear Information System (INIS)

    Gurlui, S.; Sanduloviciu, M.; Mihesan, C.; Ziskind, M.; Focsa, C.

    2005-01-01

    The double layers (DLs) are one of the most complex problems of the plasma physics. These layers are apparently important not only in laboratory plasmas and laser-ablation plasma plumes but also in natural phenomena, e.g. the aurora and fire balls.This work studies the dynamics of the double layers in a laser ablation plume from different targets irradiated by a Nd: YAG 10 ns pulsed laser. The plasma formation was studied by means of both Langmuir probe and mass spectrometry methods using an experimental set-up developed for the study of environmental or technological interest samples. The ionic current distribution in plasma plume formation was recorded in different experimental conditions. We have found that it depends on the laser energy, the pressure of the buffer gas and the probe position. The periodical oscillations recorded in different experimental conditions prove that these plasma formations (DLs) are local physical systems able to accumulate and release energy. Acting as storing and releasing energy elements, the DLs can sustain periodical or non-periodical variations of the current or of the other global parameters of the plasma. (author)

  2. Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers

    Energy Technology Data Exchange (ETDEWEB)

    Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)

    2012-10-15

    We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Contribution to implanted silicon layers and their annealing

    International Nuclear Information System (INIS)

    Combasson, J.-L.

    1976-01-01

    Defects created by boron implantation in silicon have been characterized by measuring the diffusion coefficient during annealing. Implanted impurity distributions were calculated after analyzing the hypotheses relating to charged particle slowing down through matter. Profiles are predicted with a good accuracy, by replacing occasionally the electronic stopping law by an empirical law. The asymmetries predicted are generally observed but deviations may occur for crystalline targets, or when the ion is heavy with regard to the substrate (in the event the Thomas-Fermi potential is not yet valid due to the high impact parameters). When deviations are neglected, the displacement cascade from implantation is represented by a damage profile proportional to the distribution of the Frenkel pairs. The annealing of the implanted layers is characterized by three annealing stages. The first one (400 deg C-600 deg C) is imputed to divacancy annealing associated to the formation and migration of boron-vacancy complexes. The second one (500 deg C-650 deg C) is characterized by the Watkins replacement mechanism. At high temperatures, when the annealing duration is longer than that of precipitation, interstitial loops are dissolved, and the thermal diffusion of boron atoms involves the vacancy mechanism of thermal diffusion [fr

  4. Double layers in the laboratory and above the aurora

    International Nuclear Information System (INIS)

    Block, L.P.

    1980-11-01

    Recent laboratory double layer experiments have simulated, much better than before, the conditions prevailing on auroral field lines at high altitudes. In particular, magnetic fields strong enough to magnetize the electrons (but not quite the ions) have been used. Particle and wave spectra have been measured. Wave-particle interaction has been shown to play a minor role in the only case that has been quantitatively analyzed. The three-dimensional potential distribution has been mapped. The particle budget requires the radial electric field to be outward in the no magnetic field case but inward with magnetic field, in agreement with what is observed above the aurora. (author)

  5. LAYERED DOUBLE HYDROXIDES: NANOMATERIALS FOR APPLICATIONS IN AGRICULTURE

    Directory of Open Access Journals (Sweden)

    Luíz Paulo Figueredo Benício

    2015-02-01

    Full Text Available The current research aims to introduce Layered Double Hydroxides (LDH as nanomaterials to be used in agriculture, with particular reference to its use as storage and slow release matrix of nutrients and agrochemicals for plant growing. Structural characteristics, main properties, synthesis methods and characterization of LDH were covered in this study. Moreover, some literature data have been reported to demonstrate their potential for storage and slow release of nitrate, phosphate, agrochemicals, besides as being used as adsorbent for the wastewater treatment. This research aims to expand, in near future, the investigation field on these materials, with application in agriculture, increasing the interface between chemistry and agronomy.

  6. The photoluminescence of Co-Al-layered double hydroxide

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    We report a new optical behaviour of pure Co-Al-layered double hydroxide (LDH). It was found that the Co-Al-LDH sample could emit fluorescence without any fluorescent substances intercalated. Its excitation spectrum shows a maximum peak near the wavelength 370 nm, the maximum emission peak appears at 430 nm and the photoluminescence colour of the Co-Al-LDH sample is blue. This new optical property will be expected to extend the potential applications of LDHs in optical materials field.

  7. Electrostatic double-layer interaction between stacked charged bilayers

    Science.gov (United States)

    Hishida, Mafumi; Nomura, Yoko; Akiyama, Ryo; Yamamura, Yasuhisa; Saito, Kazuya

    2017-10-01

    The inapplicability of the DLVO theory to multilayered anionic bilayers is found in terms of the co-ion-valence dependence of the lamellar repeat distance. Most of the added salt is expelled from the interlamellar space to the bulk due to the Gibbs-Donnan effect on multiple bilayers with the bulk. The electrostatic double-layer interaction is well expressed by the formula recently proposed by Trefalt. The osmotic pressure due to the expelled ions, rather than the van der Waals interaction, is the main origin of the attractive force between the bilayers.

  8. Ion acoustic double layers in the presence of plasma source

    International Nuclear Information System (INIS)

    Okuda, H.; Ashour-Abdalla, M.

    1982-01-01

    Steady-state plasma turbulence and the formation of negative potential spikes and double layers in the presence of ion acoustic instabilities have been studied by means of one-dimensional particle simulations in which the velocities of a small fraction of electrons are replaced by the initial drifting Maxwellian at a constant rate. A steady state is found where negative potential spikes appear randomly in space and time giving rise to an anomalous resistivity much greater than previously found. Comparisons of the simulation results with laboratory and space plasmas are discussed

  9. Optical properties of single-layer, double-layer, and bulk MoS2

    Energy Technology Data Exchange (ETDEWEB)

    Molina-Sanchez, Alejandro; Wirtz, Ludger [University of Luxembourg (Luxembourg); Hummer, Kerstin [University of Vienna, Vienna (Austria)

    2013-07-01

    The rise of graphene has brought attention also to other layered materials that can complement graphene or that can be an alternative in applications as transistors. Single-layer MoS{sub 2} has shown interesting electronic and optical properties such as as high electron mobility at room temperature and an optical bandgap of 1.8 eV. This makes the material suitable for transistors or optoelectronic devices. We present a theoretical study of the optical absorption and photoluminescence spectra of single-layer, double-layer and bulk MoS{sub 2}. The excitonic states have been calculated in the framework of the Bethe-Salpeter equation, taking into account the electron-hole interaction via the screened Coulomb potential. In addition to the step-function like behaviour that is typical for the joint-density of states of 2D materials with parabolic band dispersion, we find a bound excitonic peak that is dominating the luminescence spectra. The peak is split due to spin-orbit coupling for the single-layer and split due to layer-layer interaction for few-layer and bulk MoS{sub 2}. We discuss the changes of the optical bandgap and of the exciton binding energy with the number of layers, comparing our results with the reported experimental data.

  10. Organic biocides hosted in layered double hydroxides: enhancing antimicrobial activity

    Directory of Open Access Journals (Sweden)

    Cruz Alejandra Santana

    2018-03-01

    Full Text Available Samples of layered double hydroxides containing carbonates as compensating anions were prepared by the urea method. These LDHs were used as hosts of anions coming from pipemidic and nalidixic acid. XRD results confirm that these anions were hosted in the interlayer space of LDHs. Further, from 27Al NMR MAS characterization of an interaction between the brucite-like layers and anions was suggested. Then the hybrids LDHs were used as biocide of Salmonella typhi and Escherichia coli. The release profile of pipemidic and nalidixic anions from hybrid LDHs occurs for periods as long as 3.5 hours. The free-organic acid LDHs were not able to kill S. Typhi, neither E. coli. In contrast, the hybrids LDHs eliminate almost completely bacteria within short times.

  11. Silicon transport in sputter-deposited tantalum layers grown under ion bombardment

    International Nuclear Information System (INIS)

    Gallais, P.; Hantzpergue, J.J.; Remy, J.C.; Roptin, D.

    1988-01-01

    Tantalum was sputter deposited on (111) Si substrate under low-energy ion bombardment in order to study the effects of the ion energy on the silicon transport into the Ta layer. The Si substrate was heated up to 500 0 C during growth. For ion energies up to 180 eV silicon is not transported into tantalum and the growth temperature has no effect. An ion bombardment energy of 280 eV enhances the transport of silicon throughout the tantalum layer. Growth temperatures up to 300 0 C have no effect on the silicon transport which is mainly enhanced by the ion bombardment. For growth temperatures between 300 and 500 0 C, the silicon transport is also enhanced by the thermal diffusion. The experimental depth distribution of silicon is similar to the theoretical depth distribution calculated for the case of an interdiffusion. The ion-enhanced process of silicon transport is characterized by an activation energy of 0.4 eV. Silicon into the layers as-grown at 500 0 C is in both states, amorphous silicide and microcrystalline cubic silicon

  12. Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

    International Nuclear Information System (INIS)

    Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

    2007-01-01

    The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

  13. Ray-theory approach to electrical-double-layer interactions.

    Science.gov (United States)

    Schnitzer, Ory

    2015-02-01

    A novel approach is presented for analyzing the double-layer interaction force between charged particles in electrolyte solution, in the limit where the Debye length is small compared with both interparticle separation and particle size. The method, developed here for two planar convex particles of otherwise arbitrary geometry, yields a simple asymptotic approximation limited to neither small zeta potentials nor the "close-proximity" assumption underlying Derjaguin's approximation. Starting from the nonlinear Poisson-Boltzmann formulation, boundary-layer solutions describing the thin diffuse-charge layers are asymptotically matched to a WKBJ expansion valid in the bulk, where the potential is exponentially small. The latter expansion describes the bulk potential as superposed contributions conveyed by "rays" emanating normally from the boundary layers. On a special curve generated by the centers of all circles maximally inscribed between the two particles, the bulk stress-associated with the ray contributions interacting nonlinearly-decays exponentially with distance from the center of the smallest of these circles. The force is then obtained by integrating the traction along this curve using Laplace's method. We illustrate the usefulness of our theory by comparing it, alongside Derjaguin's approximation, with numerical simulations in the case of two parallel cylinders at low potentials. By combining our result and Derjaguin's approximation, the interaction force is provided at arbitrary interparticle separations. Our theory can be generalized to arbitrary three-dimensional geometries, nonideal electrolyte models, and other physical scenarios where exponentially decaying fields give rise to forces.

  14. Cross-talk studies on FPCB of double-sided silicon micro-strip detector

    International Nuclear Information System (INIS)

    Yang, Lei; Li, Zhankui; Li, Haixia; Wang, Pengfei; Wang, Zhusheng; Chen, Cuihong; Liu, Fengqiong; Li, Ronghua; Wang, Xiuhua; Li, Chunyan; Zu, Kailing

    2014-01-01

    Double-sided silicon micro-strip detector's parameters and a test method and the results of cross-talk of FPCB are given in this abstract. In addition, the value of our detector's readout signal has little relation to FPCB's cross-talk.

  15. Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors

    International Nuclear Information System (INIS)

    Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Rachevskaia, I.; Zen, M.; Zorzi, N.

    2001-01-01

    We report on the development of a fabrication technology for double-sided, AC-coupled silicon microstrip detectors for tracking applications. Two batches of detectors with good electrical figures and a low defect rate were successfully manufactured at IRST Laboratory. The processing techniques and the experimental results obtained from these detector prototypes are presented and discussed

  16. Double-layered collagen graft to the radial forearm free flap donor sites without skin graft.

    Science.gov (United States)

    Park, Tae-Jun; Kim, Hong-Joon; Ahn, Kang-Min

    2015-12-01

    Radial forearm free flap is the most reliable flap for intraoral soft tissue reconstruction after cancer ablation surgery. However, unesthetic scar of the donor site and the need for a second donor site for skin graft are major disadvantages of the forearm flap. The purpose of this study was to report the clinical results of double-layered collagen graft to the donor site of the forearm free flap without skin graft. Twenty-two consecutive patients who underwent oral cancer ablation and forearm reconstruction between April 2010 and November 2013 were included in this study. Male to female ratio was 12:10, and average age was 61.0 years old (27-84). Double-layered collagen was grafted to the donor site of the forearm free flap and healed for secondary intention. Upper silicone had been trimmed at the periphery during secondary intention, and dry dressing was used. Postoperative scar healing and esthetic results and function were evaluated. An average follow-up period was 34.9 months. The scar area was decreased to 63.9 % in average. The complete healing was obtained between 1.5 and 3 months according to the defect size. There was no functional defect or impairment 3 months after operation. All patients were satisfied with the esthetic results. Three patients died of recurred cancer. Double-layered collagen graft was successfully performed in this study. Without the thigh skin graft, patients had experienced less painful postoperative healing periods and discomfort.

  17. Double-step annealing and ambient effects on phosphorus implanted emitters in silicon

    International Nuclear Information System (INIS)

    Koji, T.; Tseng, W.F.; Mayer, J.W.; Suganuma, T.

    1979-01-01

    Emitters of npn silicon bipolar transistors have been made by a phosphorus implantation at 50 keV P + to a dose of 1 x 10 16 cm -2 . This was followed by high temperature processes to reduce lattice disorder, to drive-in the phosphorus atoms, and to form oxide layers. The first process step was carried out by using single- and double-step anneals in various ambients (dry N 2 , dry 0 2 and steam) while the drive-in and oxidation steps were common for all structures. Electrical measurements on emitter/base leakage current, low frequency (popcorn) noise and current gain showed that the annealing ambient had a major influence. The transistors with implanted emitters annealed in a dry N 2 ambient are comparable to commercial ones with thermally-diffused emitters. Transmission electron microscopy observations on samples annealed in steam ambients revealed dislocations extending into the sidewall of the emitter/base junction. This sidewell penetration of dislocations is the main origin of the degradation of the emitter/base junction characteristics. (author)

  18. Development of double-sided silicon strip detectors (DSSD) for a Compton telescope

    International Nuclear Information System (INIS)

    Takeda, Shin'ichiro; Watanabe, Shin; Tanaka, Takaaki; Nakazawa, Kazuhiro; Takahashi, Tadayuki; Fukazawa, Yasushi; Yasuda, Hajimu; Tajima, Hiroyasu; Kuroda, Yoshikatsu; Onishi, Mitsunobu; Genba, Kei

    2007-01-01

    The low noise double-sided silicon strip detector (DSSD) technology is used to construct a next generation Compton telescope which is required to have both high-energy resolution and high-Compton reconstruction efficiency. In this paper, we present the result of a newly designed stacked DSSD module with high-energy resolution in highly packed mechanical structure. The system is designed to obtain good P-side and N-side noise performance by means of DC-coupled read-out. Since there are no decoupling capacitors in front-end electronics before the read-out ASICs, a high density stacked module with a pitch of 2 mm can be constructed. By using a prototype with four-layer of DSSDs with an area of 2.56cmx2.56cm, we have succeeded to operate the system. The energy resolution at 59.5 keV is measured to be 1.6 keV (FWHM) for the P-side and 2.8 keV (FWHM) for the N-side, respectively. In addition to the DSSD used in the prototype, a 4 cm wide DSSD with a thickness of 300μm is also developed. With this device, an energy resolution of 1.5 keV (FWHM) was obtained. A method to model the detector energy response to properly handle split events is also discussed

  19. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Youngseok Lee

    2012-01-01

    Full Text Available It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0 which improves the efficiency of HIT solar cell. The ultrathin thermal passivation silicon oxide (SiO2 layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes. The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time. The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2 flow rate of 3 Lpm. A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness. This ultrathin SiO2 layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i layer and the passivation and tunneling effects of the silicon oxide layer were exploited. The photocurrent was decreased with the increase of illumination intensity and SiO2 thickness.

  20. Mineralogy of C-S-H belite hydrates incorporating Zn-Al-Ti layered double hydroxides

    Directory of Open Access Journals (Sweden)

    Amor F.

    2018-01-01

    Full Text Available Recently, the belitic cements with low alite content were the subject of several research works which aimed to replace the Ordinary Portland Clinker (OPC for ecological reasons (reduction of CO2 emissions, so to understand the reactivity of this cement, the hydration study of the C2S “dicalcium silicate” phase is primordial research step. As well for a clean environment, the TiO2 photocatalyst has been extensively applied in the science of building materials because of its ability to degrade the cement surface pollutants. New photocatalyst based layered double hydroxides (LDH associated with zinc, aluminium and TiO2 was introduced to increase the compatibility with mortars. The present work is subjected to investigate the effect of the layered double hydroxides on the hydration of C2S in following the evolution of hydration by X-ray diffraction at 2, 7, 28 and 90 days and analyzing the calcium/silicon ratio of different formed hydrates.

  1. Electrostatic double layers and a plasma evacuation process

    International Nuclear Information System (INIS)

    Raadu, M.A.; Carlqvist, P.

    1979-12-01

    An evacuation process due to the growth of current driven instabilities in a plasma is discussed. The process, which leads to localized extreme density reductions, is related to the formation of electrostatic double layers. The initial linear phase is treated using the superposition of unstable plasma waves. In the long wave length, non-dispersive limit a density dip, which is initially present as a small disturbance, grows rapidly and remains localized in the plasma. The process works for a variety of plasma conditions provided a certain current density is exceeded. For a particular choice of plasma parameters the non-linear development is followed, by solving the coupled Vlasov-Poisson equations by finite difference methods. The evacuation process is found to work even more effectively in the non-linear phase and leads to an extreme density reduction within the dip. It is suggested that the growth of such structures produces weak points within the plasma that can lead to the formation of double layers. (Auth.)

  2. Uptake Fluoride from Water by Starch Stabilized Layered Double Hydroxides

    Directory of Open Access Journals (Sweden)

    Jiming Liu

    2018-06-01

    Full Text Available A novel starch stabilized Mg/Al layered Double hydroxides (S-LDHs was prepared in a facile approach and its fluoride ion removal performance was developed. Characterization of S-LDHs was employed by using X-ray diffraction (XRD, Fourier-transform infrared spectroscopy (FTIR, and particle size distribution. The adsorption property was studied through the assessment of the adsorption isotherms, kinetic models, thermal dynamics, and pH influence. The result shows that a low loading of starch of 10 mg onto layered double hydroxides (LDHs could obviously improve the fluoride removal rate. The S-LDHs had three times higher the adsorption capacity to fluoride than that of Mg/Al LDHs to fluoride. The particle size was smaller and the particle size distribution was narrower for S-LDHs than that for Mg/Al LDHs. The Langmuir adsorption isotherm model and pseudo-second-order kinetic model fitted well with the experimental data. In thermodynamic parameters, the enthalpy (ΔH0 value was 35.63 kJ·mol−1 and the entropy (ΔS0 value was 0.0806 kJ·mol−1K−1. The values of ΔG0 were negative, implying the adsorption process is spontaneous. S-LDHs reveals stable adsorption property in a wide pH range from 3 to 9. The mechanism for fluoride adsorption on S-LDHs included surface adsorption and interaction ion exchange.

  3. Geometric corrections due to inhomogeneous field in the magnetospheric double current layer

    International Nuclear Information System (INIS)

    Callebaut, D.K.; Van den Buys, A.M.

    1985-01-01

    The case of oblique incidence and of a slope in the magnetic field for plane parallel models of the magnetospheric double layer is considered. The two models are the Magnetospheric Double Layer (MDL) and the Magnetospheric Double Current Layer (MDCL). The latter is more appropriate but due to some approximations it gives sometimes incorrect results. An improved model uses a triple current layer. (R.P.)

  4. Thermal analysis of a double layer phase change material floor

    International Nuclear Information System (INIS)

    Jin Xing; Zhang Xiaosong

    2011-01-01

    Phase change materials (PCMs) can be used to shift the cooling or heating load from the peak period to the off-peak period. In this paper, a new double layer phase change material (PCM) floor is put forward. The two layers of PCM have different melting temperature. The system is used to store heat or cold energy in the off-peak period and release them in the peak period during heating or cooling. According to the numerical model built in this paper, the thermal performances of the floor are analyzed. The results show that the optimal melting temperatures of PCMs exist. The fluctuations of the floor surface temperatures and the heat fluxes will be reduced and the system still can provide a certain amount of heat or cold energy after the heat pump or chiller has been turned off for a long time. Compared to the floor without PCM, the energy released by the floor with PCM in peak period will be increased by 41.1% and 37.9% during heating and cooling when the heat of fusion of PCM is 150 kJ/kg. - Highlights: → A new double layer phase change material floor is put forward. → The system is used to store heat or cold energy in the off-peak period and release them in the peak period during heating or cooling. → The optimal melting temperatures of PCMs in the system exist. → The heat and cold energy released by the floor with PCM in peak period can be increased by 41.1% and 37.9%.

  5. Dual-scale nanoripple/nanoparticle-covered microspikes on silicon by femtosecond double pulse train irradiation in water

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Ge; Jiang, Lan [Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 (China); Li, Xin, E-mail: lixin02@bit.edu.cn [Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 (China); Xu, Yongda; Shi, Xuesong; Yan, Ruyu [Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 (China); Lu, Yongfeng [Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511 (United States)

    2017-07-15

    Highlights: • A simple method to fabricate dual-scale structures on silicon is proposed. • Nanoripple-covered or nanoparticle-covered microspikes are obtained on Si firstly. • They are obtained by temporally-shaped fs laser one-step irradiation in water. • Their application in SERS was proved with a high sensitivity of up to 10{sup 8}. - Abstract: Novel dual-scale structures were obtained by femtosecond double pulse train (subpulse delay Δt > 0 ps) one-step irradiating silicon in water. The dual-scale structures consist of microspikes of ∼2 μm width and ∼0.5 μm height, and nanoripples with a mean period of 146 nm or nanoparticles with a mean diameter of 90 nm which entirely cover on the microspikes, for linearly polarized or circularly polarized femtosecond laser respectively. The formation of dual-scale structures involves the following processes: (1) Continuously laser energy deposited at femtosecond to picosecond timescales within silicon surfaces and central regions, will result in enhanced capillary waves and thinner melted silicon layers. Hence, the microspikes can be induced at laser fluences below ablation threshold; (2) Later (>500–800 pulses), a mass of debris and bubbles produced will lead to the remarkably and uniformly scattering or shielding of subsequent incident laser energy. Hence, the nanostructures can be induced. The novel structures exhibit high-sensitive surface enhanced Raman scattering with an enhancement factor of 10{sup 8} for Rhodamine 6G detecting. Besides, the novel structures have application potentials in improving the silicon hydrophobicity, antireflection, etc.

  6. Quality assurance of double-sided silicon microstrip sensors for the silicon tracking system in the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Larionov, Pavel [Goethe Universitaet, Frankfurt (Germany); Collaboration: CBM-Collaboration

    2015-07-01

    The Silicon Tracking System (STS) is the core tracking detector of the CBM experiment at FAIR. The system's task is to reconstruct the trajectories of the charged particles produced in the beam-target interactions, provide their momentum determination, and enable the detection of decay topologies. The STS will comprise 1220 double-sided silicon microstrip sensors. After production each sensor will go through a number of Quality Assurance procedures to verify their validity for performance in the STS and also to confirm the manufacturer's data. In this talk, results of the quality assurance procedures that are being applied to the latest STS prototype sensors, including detailed tests of the quality of each single strip, long-term stability and preparations for volume tests during series production, are presented.

  7. Second-harmonic generation in substoichiometric silicon nitride layers

    Science.gov (United States)

    Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

    2013-03-01

    Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

  8. Optical properties of uniformly sized silicon nanocrystals within a single silicon oxide layer

    Energy Technology Data Exchange (ETDEWEB)

    En Naciri, A., E-mail: aotmane.en-naciri@univ-lorraine.fr [Universite de Lorraine, LCP-A2MC, Institut Jean Barriol (France); Miska, P. [Universite de Lorraine, Institut Jean Lamour CNRS UMR 7198 (France); Keita, A.-S. [Max Planck Institute for Intelligent Systems (Germany); Battie, Y. [Universite de Lorraine, LCP-A2MC, Institut Jean Barriol (France); Rinnert, H.; Vergnat, M. [Universite de Lorraine, Institut Jean Lamour CNRS UMR 7198 (France)

    2013-04-15

    Silicon nanocrystals (Si-NC) with different sizes (2-6 nm) are synthesized by evaporation. The system is composed of a single Si-NC layer that is well controlled in size. The numerical modeling of such system, without a large size distribution, is suitable to perform easily the optical calculations. The nanocrystal size and confinement effects on the optical properties are determined by photoluminescence (PL) measurements, absorption in the UV visible range, and spectroscopic ellipsometry (SE). The optical constants and the bandgap energies are then extracted and analyzed. The dependence of the optical responses with the decrease of the size of the Si-NC occurs not only with a drastic reduction of the amplitudes of dielectric function but also by a significant expansion of the optical gap. This study supports the idea of a presence of a critical size of Si-NC for which the confinement effect becomes weak. The evolution of those bandgap energies are discussed in comparison with values reported in literature.

  9. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    Energy Technology Data Exchange (ETDEWEB)

    Hutchinson, David [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy NY 12180 (United States); Department of Physics and Nuclear Engineering, United States Military Academy, West Point NY 10996 (United States); Mathews, Jay [US Army ARDEC – Benét Laboratories, Watervliet NY 12189 (United States); Department of Physics, University of Dayton, Dayton, OH 45469 (United States); Sullivan, Joseph T.; Buonassisi, Tonio [School of Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 (United States); Akey, Austin [School of Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 (United States); Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge MA 02138 (United States); Aziz, Michael J. [Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge MA 02138 (United States); Persans, Peter [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy NY 12180 (United States); Warrender, Jeffrey M., E-mail: jwarrend@post.harvard.edu [US Army ARDEC – Benét Laboratories, Watervliet NY 12189 (United States)

    2016-05-15

    We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  10. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    Directory of Open Access Journals (Sweden)

    David Hutchinson

    2016-05-01

    Full Text Available We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  11. Retinal Layers Measurements following Silicone Oil Tamponade for Retinal Detachment Surgery.

    Science.gov (United States)

    Jurišić, Darija; Geber, Mia Zorić; Ćavar, Ivan; Utrobičić, Dobrila Karlica

    2017-12-19

    This study aimed to investigate the influence of silicone oil on the retinal nerve fiber layer (RNFL) thickness in patients with primary rhegmatogenous retinal detachment who underwent vitreoretinal surgery. The study included 47 patients (eyes), who underwent a pars plana vitrectomy with the silicone oil tamponade. The control group included unoperated eye of all participants. Spectral-domain optical coherence tomography (SD-OCT) was used for the measurements of peripapilar and macular RNFL thickness. The average peripapillary RNFL thickness was significantly higher in the silicone oil filled eyes during endotamponade and after its removal. The eyes with elevated IOP had less thickening of the RNFL in comparison to the eyes with normal IOP. Central macular thickness and macular volume were decreased in the silicone oil filled eyes in comparison to the control eyes. In conclusion, silicone oil caused peripapilar RNFL thickening in the vitrectomized eyes during endotamponade and after silicone oil removal.

  12. Substrate and p-layer effects on polymorphous silicon solar cells

    Directory of Open Access Journals (Sweden)

    Abolmasov S.N.

    2014-07-01

    Full Text Available The influence of textured transparent conducting oxide (TCO substrate and p-layer on the performance of single-junction hydrogenated polymorphous silicon (pm-Si:H solar cells has been addressed. Comparative studies were performed using p-i-n devices with identical i/n-layers and back reflectors fabricated on textured Asahi U-type fluorine-doped SnO2, low-pressure chemical vapor deposited (LPCVD boron-doped ZnO and sputtered/etched aluminum-doped ZnO substrates. The p-layers were hydrogenated amorphous silicon carbon and microcrystalline silicon oxide. As expected, the type of TCO and p-layer both have a great influence on the initial conversion efficiency of the solar cells. However they have no effect on the defect density of the pm-Si:H absorber layer.

  13. Development and performance of double sided silicon strip detectors

    International Nuclear Information System (INIS)

    Batignani, G.; Forti, F.; Moneta, L.; Triggiani, G.; Bosisio, L.; Focardi, E.; Giorgi, M.A.; Parrini, G.; Tonelli, G.

    1991-01-01

    Microstrip silicon detectors with orthogonal readout on opposite sides have been designed and fabricated. The active area of each device is 25 cm 2 and the strip pitch is 25 μm on the junction side and 50 μm on the opposite ohmic side. A space resolution of 15 μm on the junction side (100 μm readout pitch) and 24 μm on the ohmic side (200 μm readout pitch) has been measured. We also report on AC-coupling chips, designed and fabricated in order to allow AC connection of the strips to the amplifiers. These chips are 6.4x5.0 mm 2 and have 100 μm pitch. Both AC-couplers and detectors have been installed as part of the ALEPH minivertex. (orig.)

  14. Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

    Science.gov (United States)

    Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

    2018-05-01

    An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.

  15. Superionic state in double-layer capacitors with nanoporous electrodes

    International Nuclear Information System (INIS)

    Kondrat, S; Kornyshev, A

    2011-01-01

    In recent experiments (Chmiola et al 2006 Science 313 1760; Largeot et al 2008 J. Am. Chem. Soc. 130 2730) an anomalous increase of the capacitance with a decrease of the pore size of a carbon-based porous electric double-layer capacitor has been observed. We explain this effect by image forces which exponentially screen out the electrostatic interactions of ions in the interior of a pore. Packing of ions of the same sign becomes easier and is mainly limited by steric interactions. We call this state 'superionic' and suggest a simple model to describe it. The model reveals the possibility of a voltage-induced first order transition between a cation(anion)-deficient phase and a cation(anion)-rich phase which manifests itself in a jump of capacitance as a function of voltage. (fast track communication)

  16. Superionic state in double-layer capacitors with nanoporous electrodes.

    Science.gov (United States)

    Kondrat, S; Kornyshev, A

    2011-01-19

    In recent experiments (Chmiola et al 2006 Science 313 1760; Largeot et al 2008 J. Am. Chem. Soc. 130 2730) an anomalous increase of the capacitance with a decrease of the pore size of a carbon-based porous electric double-layer capacitor has been observed. We explain this effect by image forces which exponentially screen out the electrostatic interactions of ions in the interior of a pore. Packing of ions of the same sign becomes easier and is mainly limited by steric interactions. We call this state 'superionic' and suggest a simple model to describe it. The model reveals the possibility of a voltage-induced first order transition between a cation(anion)-deficient phase and a cation(anion)-rich phase which manifests itself in a jump of capacitance as a function of voltage.

  17. Modeling Electric Double-Layers Including Chemical Reaction Effects

    DEFF Research Database (Denmark)

    Paz-Garcia, Juan Manuel; Johannesson, Björn; Ottosen, Lisbeth M.

    2014-01-01

    A physicochemical and numerical model for the transient formation of an electric double-layer between an electrolyte and a chemically-active flat surface is presented, based on a finite elements integration of the nonlinear Nernst-Planck-Poisson model including chemical reactions. The model works...... for symmetric and asymmetric multi-species electrolytes and is not limited to a range of surface potentials. Numerical simulations are presented, for the case of a CaCO3 electrolyte solution in contact with a surface with rate-controlled protonation/deprotonation reactions. The surface charge and potential...... are determined by the surface reactions, and therefore they depends on the bulk solution composition and concentration...

  18. Mechanochemical approach for synthesis of layered double hydroxides

    Science.gov (United States)

    Zhang, Xiaoqing; Li, Shuping

    2013-06-01

    In this paper, a mechanochemical approach is used to prepare layered double hydroxides (LDHs). This approach involves manually grinding the precursor, nitrates and then the hydrothermal treatment. The study indicates that grinding leads to the incomplete formation of LDHs phase, LDHs-M. The reaction degree of precursor salts to LDHs after grinding depends on the melting points of the precursors. As expected, hydrothermal treatment is beneficial for the good crystallization and regularity of LDHs. Especially, the effect of hydrothermal treatment has been emphatically explored. The hydration of LDHs-M, increment of zeta potentials and the complete exchange of NO3- by CO32- anions occur successively or in parallel during the hydrothermal treatment. It can be found that combination of grinding and hydrothermal treatment gives rise to the formation of uniform and monodispersed particles of LDHs.

  19. A review on electrochemical double-layer capacitors

    International Nuclear Information System (INIS)

    Sharma, Pawan; Bhatti, T.S.

    2010-01-01

    Various energy storage technologies have been developed in the market for various applications. Batteries flywheels, fuel cells are a few which are much common, those are being used in several countries and also research is also carrying on these technologies to make much better them. The electrochemical double-layer capacitor (EDLC) is an emerging technology, which really plays a key part in fulfilling the demands of electronic devices and systems, for present and future. This paper presents the historical background, classification, construction, modeling, testing, and voltage balancing of the EDLC technology. The applications of EDLC in electrical vehicles, power quality, and others are also discussed and their advantages over other storages technologies are also discussed.

  20. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Li, Da; Kunz, Thomas; Wolf, Nadine; Liebig, Jan Philipp; Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard; Göken, Mathias; Brabec, Christoph J.

    2015-01-01

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm 2 aperture area on the graphite substrate. The optical properties of the SiN x /a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN x /a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN x /a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  1. Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+

    International Nuclear Information System (INIS)

    Tsai, M.Y.; Streetman, B.G.

    1979-01-01

    Electrical properties of recrystallized amorphous silicon layers, formed by BF + 2 implants or Si + +B + implants, have been studied by differential resistivity and Hall-effect measurements. Electrical carrier distribution profiles show that boron atoms inside the amorphized Si layers can be fully activated during recrystallization at 550 0 C. The mobility is also recovered. However, the tail of the B distribution, located inside a damaged region near the original amorphous-crystalline interface, remains inactive. This inactive tail has been observed for all samples implanted with BF + 2 . Only in a thicker amorphous layer, formed for example by Si + predamage implants, can the entire B profile be activated. The etch rate of amorphous silicon in HF and the effect of fluorine on the recrystallization rate are also reported

  2. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  3. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    International Nuclear Information System (INIS)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-01-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  4. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Science.gov (United States)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  5. Silicon solar cell technology state of the art and a proposed double sided cell

    International Nuclear Information System (INIS)

    Seddik, M.M.

    1987-08-01

    A review of the silicon technology state of the art is given. It had been found that single crystal silicon efficiency was limitd to ≥ 20%. The reason was identified to be due to the recombination current loss mechanisms. However, use of new technologies such as back-surface field, surface passivation, double anti-reflection coatings and back-surface illumination demonstrated to achieve higher efficiencies. Experiments were carried out to evaluate the effect of back surfaces illumination on the cell efficiency enhancement. It was found that for single cell, back-surface illumination contribute a 12% increase in efficiency whereas for double cell illumination (back-to-back cells) the improvement was 59% increase in efficiency. A V-shaped flat mirror reflector with optimum angle of 45 deg. to the plane of the cell from both sides achieved the ultimate efficiency performance. Finally, a proposed high current - high efficiency solar cell called ''Double Drift'' - Double Sided Illumination Cell'' was presented. The new structures were in the form of n + pn + or p + np + double junctions. The expected efficiency ranges 50-60% with proper material design, double anti-reflection coatings and V-shaped irregular plane mirror reflector illumination. (author). 43 refs, 4 figs, 7 tabs

  6. Design criteria for XeF{sub 2} enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Aftab M.; Shaikh, Sohail F.; Hussain, Muhammad M., E-mail: muhammadmustafa.hussain@kaust.edu.sa [Integrated Nanotechnology Laboratory (INL) and Integrated Disruptive Electronics Applications (IDEA) Laboratory, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology - KAUST, Thuwal 23955-6900 (Saudi Arabia)

    2016-07-15

    Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF{sub 2}) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

  7. Design criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

    KAUST Repository

    Hussain, Aftab M.

    2016-07-15

    Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF2) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

  8. Design criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

    KAUST Repository

    Hussain, Aftab M.; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

    2016-01-01

    Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF2) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

  9. Stable cycling of double-walled silicon nanotube battery anodes through solid–electrolyte interphase control

    KAUST Repository

    Wu, Hui

    2012-03-25

    Although the performance of lithium ion-batteries continues to improve, their energy density and cycle life remain insufficient for applications in consumer electronics, transport and large-scale renewable energy storage 1-5. Silicon has a large charge storage capacity and this makes it an attractive anode material, but pulverization during cycling and an unstable solid-electrolyte interphase has limited the cycle life of silicon anodes to hundreds of cycles 6-11. Here, we show that anodes consisting of an active silicon nanotube surrounded by an ion-permeable silicon oxide shell can cycle over 6,000 times in half cells while retaining more than 85% of their initial capacity. The outer surface of the silicon nanotube is prevented from expansion by the oxide shell, and the expanding inner surface is not exposed to the electrolyte, resulting in a stable solid-electrolyte interphase. Batteries containing these double-walled silicon nanotube anodes exhibit charge capacities approximately eight times larger than conventional carbon anodes and charging rates of up to 20C (a rate of 1C corresponds to complete charge or discharge in one hour). © 2012 Macmillan Publishers Limited. All rights reserved.

  10. Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

    Czech Academy of Sciences Publication Activity Database

    Stuckelberger, J.; Nogay, G.; Wyss, P.; Jeangros, Q.; Allebe, Ch.; Debrot, F.; Niquille, X.; Ledinský, Martin; Fejfar, Antonín; Despeisse, M.; Haug, F.J.; Löper, P.; Ballif, C.

    2016-01-01

    Roč. 158, Dec (2016), s. 2-10 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.784, year: 2016

  11. Plasmons in spatially separated double-layer graphene nanoribbons

    International Nuclear Information System (INIS)

    Bagheri, Mehran; Bahrami, Mousa

    2014-01-01

    Motivated by innovative progresses in designing multi-layer graphene nanostructured materials in the laboratory, we theoretically investigate the Dirac plasmon modes of a spatially separated double-layer graphene nanoribbon system, made up of a vertically offset armchair and metallic graphene nanoribbon pair. We find striking features of the collective excitations in this novel Coulomb correlated system, where both nanoribbons are supposed to be either intrinsic (undoped/ungated) or extrinsic (doped/gated). In the former, it is shown the low-energy acoustical and the high-energy optical plasmon modes are tunable only by the inter-ribbon charge separation. In the later, the aforementioned plasmon branches are modified by the added doping factor. As a result, our model could be useful to examine the existence of a linear Landau-undamped low-energy acoustical plasmon mode tuned via the inter-ribbon charge separation as well as doping. This study might also be utilized for devising novel quantum optical waveguides based on the Coulomb coupled graphene nanoribbons

  12. Effect of porous silicon layer on the performance of Si/oxide photovoltaic and photoelectrochemical cells

    International Nuclear Information System (INIS)

    Badawy, Waheed A.

    2008-01-01

    Photovoltaic and photoelectrochemical systems were prepared by the formation of a thin porous film on silicon. The porous silicon layer was formed on the top of a clean oxide free silicon wafer surface by anodic etching in HF/H 2 O/C 2 H 5 OH mixture (2:1:1). The silicon was then covered by an oxide film (tin oxide, ITO or titanium oxide). The oxide films were prepared by the spray/pyrolysis technique which enables doping of the oxide film by different atoms like In, Ru or Sb during the spray process. Doping of SnO 2 or TiO 2 films with Ru atoms improves the surface characteristics of the oxide film which improves the solar conversion efficiency. The prepared solar cells are stable against environmental attack due to the presence of the stable oxide film. It gives relatively high short circuit currents (I sc ), due to the presence of the porous silicon layer, which leads to the recorded high conversion efficiency. Although the open-circuit potential (V oc ) and fill factor (FF) were not affected by the thickness of the porous silicon film, the short circuit current was found to be sensitive to this thickness. An optimum thickness of the porous film and also the oxide layer is required to optimize the solar cell efficiency. The results represent a promising system for the application of porous silicon layers in solar energy converters. The use of porous silicon instead of silicon single crystals in solar cell fabrication and the optimization of the solar conversion efficiency will lead to the reduction of the cost as an important factor and also the increase of the solar cell efficiency making use of the large area of the porous structures

  13. Plasma enhanced atomic layer deposited MoOx emitters for silicon heterojunction solar cells

    OpenAIRE

    Ziegler, J.; Mews, M.; Kaufmann, K.; Schneider, T.; Sprafke, A.N.; Korte, L.; Wehrsporn, R.B

    2015-01-01

    A method for the deposition of molybdenum oxide MoOx with high growth rates at temperatures below 200 C based on plasma enhanced atomic layer deposition is presented. The stoichiometry of the overstoichiometric MoOx films can be adjusted by the plasma parameters. First results of these layers acting as hole selective contacts in silicon heterojunction solar cells are presented and discussed

  14. Relative permittivity in the electrical double layer from nonlinear optics

    Science.gov (United States)

    Boamah, Mavis D.; Ohno, Paul E.; Geiger, Franz M.; Eisenthal, Kenneth B.

    2018-06-01

    Second harmonic generation (SHG) spectroscopy has been applied to probe the fused silica/water interface at pH 7 and the uncharged 11 ¯ 02 sapphire/water interface at pH 5.2 in contact with aqueous solutions of NaCl, NaBr, NaI, KCl, RbCl, and CsCl as low as several 10 μM. For ionic strengths up to about 0.1 mM, the SHG responses were observed to increase, reversibly for all salts surveyed, when compared to the condition of zero salt added. Further increases in the salt concentration led to monotonic decreases in the SHG response. The SHG increases followed by decreases are found to be consistent with recent reports of phase interference and phase matching in nonlinear optics. By varying the relative permittivity employed in common mean field theories used to describe electrical double layers and by comparing our results to available literature data, we find that models recapitulating the experimental observations are the ones in which (1) the relative permittivity of the diffuse layer is that of bulk water, with other possible values as low as 30, (2) the surface charge density varies with salt concentration, and (3) the charge in the Stern layer or its thickness varies with salt concentration. We also note that the experimental data exhibit sensitivity depending on whether the salt concentration is increased from low to high values or decreased from high to low values, which, however, is not borne out in the fits, at least within the current uncertainties associated with the model point estimates.

  15. Obliquely Propagating Non-Monotonic Double Layer in a Hot Magnetized Plasma

    International Nuclear Information System (INIS)

    Kim, T.H.; Kim, S.S.; Hwang, J.H.; Kim, H.Y.

    2005-01-01

    Obliquely propagating non-monotonic double layer is investigated in a hot magnetized plasma, which consists of a positively charged hot ion fluid and trapped, as well as free electrons. A model equation (modified Korteweg-de Vries equation) is derived by the usual reductive perturbation method from a set of basic hydrodynamic equations. A time stationary obliquely propagating non-monotonic double layer solution is obtained in a hot magnetized-plasma. This solution is an analytic extension of the monotonic double layer and the solitary hole. The effects of obliqueness, external magnetic field and ion temperature on the properties of the non-monotonic double layer are discussed

  16. Structure and field emission of graphene layers on top of silicon nanowire arrays

    International Nuclear Information System (INIS)

    Huang, Bohr-Ran; Chan, Hui-Wen; Jou, Shyankay; Chen, Guan-Yu; Kuo, Hsiu-An; Song, Wan-Jhen

    2016-01-01

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  17. Structure and field emission of graphene layers on top of silicon nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Bohr-Ran; Chan, Hui-Wen [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Jou, Shyankay, E-mail: sjou@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Chen, Guan-Yu [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Kuo, Hsiu-An; Song, Wan-Jhen [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

    2016-01-30

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  18. Study on the fabrication of silicon nanoparticles in an amorphous silicon light absorbing layer for solar cell applications

    International Nuclear Information System (INIS)

    Park, Joo Hyung; Song, Jin Soo; Lee, Jae Hee; Lee, Jeong Chul

    2012-01-01

    Hydrogenated amorphous-silicon (a-Si:H) thin-film solar cells have advantages of relatively simple technology, less material consumption, higher absorption ratio compared to crystalline silicon, and low cost due to the use of cheaper substrates rather than silicon wafers. However, together with those advantages, amorphous-silicon thin-film solar cells face several issues such as a relatively lower efficiency, a relatively wider bandgap, and the Staebler-Wronski effect (SWE) compared to other competing materials (i.e., crystalline silicon, CdTe, Cu(In x Ga (1-x) )Se 2 (CIGS), etc.). As a remedy for those drawbacks and a way to enhance the cell conversion efficiency at the same time, the employment of crystalline silicon nanoparticles (Si-NPs) in the a-Si matrix is proposed to organize the quantum-dot (QD) structure as the light-absorbing layer. This structure of the light absorbing layer consists of single-crystal Si-NPs in an a-Si:H thin-film matrix. The single-crystal Si-NPs are synthesized by using SiH 4 gas decomposition with CO 2 laser pyrolysis, and the sizes of Si-NPs are calibrated to control their bandgaps. The synthesized size-controlled Si-NPs are directly transferred to another chamber to form a QD structure by using co-deposition of the Si-NPs and the a-Si:H matrix. Transmission electron microscopy (TEM) analyses are employed to verify the sizes and the crystalline properties of the Si-NPs alone and of the Si-NPs in the a-Si:H matrix. The TEM results show successful co-deposition of size-controlled Si-NPs in the a-Si:H matrix, which is meaningful because it suggests the possibility of further enhancement of the a-Si:H solar-cell structure and of tandem structure applications by using a single element.

  19. Electrochemical double-layer capacitors based on functionalized graphene

    Science.gov (United States)

    Pope, Michael Allan

    Graphene is a promising electrode material for electrochemical double-layer capacitors (EDLCs) used for energy storage due to its high electrical conductivity and theoretical specific surface area. However, the intrinsic capacitance of graphene is known to be low and governed by the electronic side of the interface. Furthermore, graphene tends to aggregate and stack together when processed into thick electrode films. This significantly lowers the ion-accessible specific surface area (SSA). Maximizing both the SSA and the intrinsic capacitance are the main problems addressed in this thesis in an effort to improve the specific capacitance and energy density of EDLCs. In contrast to pristine graphene, functionalized graphene produced by the thermal exfoliation of graphite oxide contains residual functional groups and lattice defects. To study how these properties affect the double-layer capacitance, a model electrode system capable of measuring the intrinsic electrochemical properties of functionalized graphene was developed. To prevent artifacts and uncertainties related to measurements on porous electrodes, the functionalized graphene sheets (FGSs) were assembled as densely tiled monolayers using a Langmuir-Blodgett technique. In this way, charging can be studied in a well-defined 2D geometry. The possibility of measuring and isolating the intrinsic electrochemical properties of FGS monolayers was first demonstrated by comparing capacitance and redox probe measurements carried out on coatings deposited on passivated gold and single crystal graphite substrates. This monolayer system was then used to follow the double-layer capacitance of the FGS/electrolyte interface as the structure and chemistry of graphene was varied by thermal treatments ranging from 300 °C to 2100 °C. Elemental analysis and Raman spectroscopy were used to determine the resulting chemical and structural transformation upon heat treatment. It was demonstrated that intrinsically defective

  20. Fabrication of double-dot single-electron transistor in silicon nanowire

    International Nuclear Information System (INIS)

    Jo, Mingyu; Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira; Ono, Yukinori; Inokawa, Hiroshi; Choi, Jung-Bum; Takahashi, Yasuo

    2010-01-01

    We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire.

  1. Electron emission from a double-layer metal under femtosecond laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuchang; Li, Suyu; Jiang, Yuanfei; Chen, Anmin, E-mail: amchen@jlu.edu.cn; Ding, Dajun; Jin, Mingxing, E-mail: mxjin@jlu.edu.cn

    2015-01-01

    In this paper we theoretically investigate electron emission during femtosecond laser ablation of single-layer metal (copper) and double-layer structures. The double-layer structure is composed of a surface layer (copper) and a substrate layer (gold or chromium). The calculated results indicate that the double-layer structure brings a change to the electron emission from the copper surface. Compared with the ablation of a single-layer, a double-layer structure may be helpful to decrease the relaxation time of the electron temperature, and optimize the electron emission by diminishing the tailing phenomenon under the same absorbed laser fluence. With the increase of the absorbed laser fluence, the effect of optimization becomes significant. This study provides a way to optimize the electron emission which can be beneficial to generate laser induced ultrafast electron pulse sources.

  2. Synthesis of Si epitaxial layers from technical silicon by liquid-phase epitaxy method

    International Nuclear Information System (INIS)

    Ibragimov, Sh.I.; Saidov, A.S.; Sapaev, B.; Horvat, M.A.

    2004-01-01

    Full text: For today silicon is one of the most suitable materials because it is investigated, cheap and several its parameters are even just as good as those of connections A III B V . Disintegration of the USSR has led to the must difficult position of the industry of silicon instrument manufacture because of all industry of semiconductor silicon manufacture had generally concentrated in Ukraine. The importance of semiconductor silicon is rather great, because of, in opinion of expects, the nearest decade this material will dominate over not only on microelectronics but also in the majority of basic researches. Research of obtain of semiconductor silicon, power electronics and solar conversion, is topical interest of the science. In the work research of technological conditions of obtain and measurement of parameters of epitaxial layers obtained from technical silicon + stannum is resulted. Growth of silicon epitaxial layer with suitable parameters on thickness, cleanliness uniformity and structural perfection depends on the correct choice of condition of the growth and temperature. It is shown that in this case the growth occurring without preliminary clearing of materials (mix materials and substrates) at crystallization of epitaxial layer from technical silicon is accompanied by clearing of silicon film from majority of impurities order-of-magnitude. As starting raw material technical silicon of mark Kr.3 has been taken. By means of X-ray microanalyzer 'Jeol' JSM 5910 LV - Japan the quantitative analysis from the different points has been and from the different sides and from different points has been carried out. After corresponding chemical and mechanical processing the quantitative analysis of layer on chip has been carried out. Results of the quantitative analysis are shown. More effective clearing occurs that of the impurity atoms such as Al, P, Ca, Ti and Fe. The obtained material (epitaxial layer) has the parameters: specific resistance ρ∼0.1-4.0

  3. Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells.

    Science.gov (United States)

    Lee, Kyung D; Park, Myung J; Kim, Do-Yeon; Kim, Soo M; Kang, Byungjun; Kim, Seongtak; Kim, Hyunho; Lee, Hae-Seok; Kang, Yoonmook; Yoon, Sam S; Hong, Byung H; Kim, Donghwan

    2015-09-02

    Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm(2)) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

  4. Electric double-layer capacitance between an ionic liquid and few-layer graphene.

    Science.gov (United States)

    Uesugi, Eri; Goto, Hidenori; Eguchi, Ritsuko; Fujiwara, Akihiko; Kubozono, Yoshihiro

    2013-01-01

    Ionic-liquid gates have a high carrier density due to their atomically thin electric double layer (EDL) and extremely large geometrical capacitance Cg. However, a high carrier density in graphene has not been achieved even with ionic-liquid gates because the EDL capacitance CEDL between the ionic liquid and graphene involves the series connection of Cg and the quantum capacitance Cq, which is proportional to the density of states. We investigated the variables that determine CEDL at the molecular level by varying the number of graphene layers n and thereby optimising Cq. The CEDL value is governed by Cq at n 4. This transition with n indicates a composite nature for CEDL. Our finding clarifies a universal principle that determines capacitance on a microscopic scale, and provides nanotechnological perspectives on charge accumulation and energy storage using an ultimately thin capacitor.

  5. Detection of charged particles in amorphous silicon layers

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Morel, J.; Kaplan, S.N.; Street, R.A.

    1986-02-01

    The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics

  6. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

    OpenAIRE

    Lee, Youngseok; Oh, Woongkyo; Dao, Vinh Ai; Hussain, Shahzada Qamar; Yi, Junsin

    2012-01-01

    It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT) solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO) process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0) which improves the efficie...

  7. Plated copper front side metallization on printed seed-layers for silicon solar cells

    OpenAIRE

    Kraft, Achim

    2015-01-01

    A novel copper front side metallization architecture for silicon solar cells based on a fine printed silver seed-layer, plated with nickel, copper and silver, is investigated. The work focuses on the printing of fine seed-layers with low silver consumption, the corrosion of the printed seed-layers by the interaction with electrolyte solutions and the encapsulation material on module level and on the long term stability of the cells due to copper migration. The investigation of the correlation...

  8. Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation

    International Nuclear Information System (INIS)

    Alloatti, L.; Lauermann, M.; Koos, C.; Freude, W.; Sürgers, C.; Leuthold, J.

    2013-01-01

    We determine the optical losses in gate-induced charge accumulation/inversion layers at a Si/SiO 2 interface. Comparison between gate-induced charge layers and ion-implanted thin silicon films having an identical sheet resistance shows that optical losses can be significantly lower for gate-induced layers. For a given sheet resistance, holes produce higher optical loss than electrons. Measurements have been performed at λ = 1550 nm

  9. Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Piatti, E.; Galasso, S.; Tortello, M.; Nair, J.R.; Gerbaldi, C. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy); Bruna, M.; Borini, S. [Istituto Nazionale di Ricerca Metrologica (INRIM), 10135 Torino (Italy); Daghero, D. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy); Gonnelli, R.S., E-mail: renato.gonnelli@polito.it [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy)

    2017-02-15

    Highlights: • We fabricated few-layer graphene FETs by mechanical exfoliation and standard microfabrication techniques. • We employed a Li-TFSI based ion gel to induce carrier densities as high as ≈6e14 e{sup −}/cm{sup 2} in the devices' channel. • We found a strong asymmetry in the sheet conductance and mobility doping dependences between electron and hole doping. • We combined the experimental results with ab initio DFT calculations to obtain the average scattering lifetime of the charge carriers. • We found that the increase in the carrier density and an unexpected increase in the density of charged scattering centers compete in determining the scattering lifetime. - Abstract: We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and five-layer samples under a large induced surface charge density both above and below the glass transition temperature of the polymer. We find that the carrier mobility shows a strong asymmetry between the hole and electron doping regime. We then employ ab initio density functional theory (DFT) calculations to determine the average scattering lifetime from the experimental data. We explain its peculiar dependence on the carrier density in terms of the specific properties of the electrolyte we used in our experiments.

  10. Activity and lifetime of urease immobilized using layer-by-layer nano self-assembly on silicon microchannels.

    Science.gov (United States)

    Forrest, Scott R; Elmore, Bill B; Palmer, James D

    2005-01-01

    Urease has been immobilized and layered onto the walls of manufactured silicon microchannels. Enzyme immobilization was performed using layer-by-layer nano self-assembly. Alternating layers of oppositely charged polyelectrolytes, with enzyme layers "encased" between them, were deposited onto the walls of the silicon microchannels. The polycations used were polyethylenimine (PEI), polydiallyldimethylammonium (PDDA), and polyallylamine (PAH). The polyanions used were polystyrenesulfonate (PSS) and polyvinylsulfate (PVS). The activity of the immobilized enzyme was tested by pumping a 1 g/L urea solution through the microchannels at various flow rates. Effluent concentration was measured using an ultraviolet/visible spectrometer by monitoring the absorbance of a pH sensitive dye. The architecture of PEI/PSS/PEI/urease/PEI with single and multiple layers of enzyme demonstrated superior performance over the PDDA and PAH architectures. The precursor layer of PEI/PSS demonstrably improved the performance of the reactor. Conversion rates of 70% were achieved at a residence time of 26 s, on d 1 of operation, and >50% at 51 s, on d 15 with a six-layer PEI/urease architecture.

  11. Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

    Directory of Open Access Journals (Sweden)

    Sebastian Gutsch

    2015-04-01

    Full Text Available We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO2 diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon. In addition, these ultrathin layers suffer from significant electron beam damage that needs to be minimized in order to image the pristine sample morphology. Finally we demonstrate how the silicon nanocrystal size distribution develops from a broad to a narrow log-normal distribution, when the initial precipitation layer thickness and stoichiometry are below a critical value.

  12. Layered double hydroxide nanoparticles in gene and drug delivery.

    Science.gov (United States)

    Ladewig, Katharina; Xu, Zhi Ping; Lu, Gao Qing Max

    2009-09-01

    Layered double hydroxides (LDHs) have been known for many decades as catalyst and ceramic precursors, traps for anionic pollutants, catalysts and additives for polymers, but their successful synthesis on the nanometer scale a few years ago opened up a whole new field for their application in nanomedicine. The delivery of drugs and other therapeutic/bioactive molecules (e.g., peptides, proteins, nucleic acids) to mammalian cells is an area of research that is of tremendous importance to medicine and provides manifold applications for any new developments in the area of nanotechnology. Among the many different nanoparticles that have been shown to facilitate gene and/or drug delivery, LDH nanoparticles have attracted particular attention owing to their many desirable properties. This review aims to report recent progress in gene and drug delivery using LDH nanoparticles. It summarizes the advantages and disadvantages of using LDH nanoparticles as carriers for nucleic acids and drugs against the general background of bottlenecks that are encountered by cellular delivery systems. It describes further the models that have been proposed for the internalization of LDH nanoparticles into cells so far and discusses the intracellular fate of the particles and their cargo. The authors offer some remarks on how this field of research will progress in the near future and which challenges need to be overcome before LDH nanoparticles can be used in a clinical setting.

  13. Acid Green 1 removal from wastewater by layered double hydroxides

    Science.gov (United States)

    Elkhattabi, El Hassan; Lakraimi, Mohamed; Berraho, Moha; Legrouri, Ahmed; Hammal, Radouan; El Gaini, Layla

    2018-03-01

    The paper presents the removal of Acid Green 1 (AG1) from aqueous solutions by [Zn-Al-Cl]-layered double hydroxides (LDHs). The LDH was prepared by coprecipitation at constant pH. The affinity of this material for AG1 was studied as a function of contact time, pH of the solution, LDH dose and AG1/LDH mass ratio. It was found that 32 h are enough to reach the equilibrium with a maximum retention at pH 8 for an LDH dose of 100 mg and with an AG1/LDH mass ratio higher than 2. The adsorption isotherm is of L-type, as described by the Langmuir model. The results demonstrate that AG1 retention on LDHs occurs by adsorption on external surface when AG1/LDH mass ratio is equal or lower than 2 and by both adsorption and interlayer ion exchange for ratios higher than 2. A mechanism for the AG1 removal has been confirmed by X-ray diffraction, Fourier transform infrared spectroscopy, thermogravimetric-differential thermal analyses and scanning electron microscopy.

  14. Exceptionally High Electric Double Layer Capacitances of Oligomeric Ionic Liquids.

    Science.gov (United States)

    Matsumoto, Michio; Shimizu, Sunao; Sotoike, Rina; Watanabe, Masayoshi; Iwasa, Yoshihiro; Itoh, Yoshimitsu; Aida, Takuzo

    2017-11-15

    Electric double layer (EDL) capacitors are promising as next-generation energy accumulators if their capacitances and operation voltages are both high. However, only few electrolytes can simultaneously fulfill these two requisites. Here we report that an oligomeric ionic liquid such as IL4 TFSI with four imidazolium ion units in its structure provides a wide electrochemical window of ∼5.0 V, similar to monomeric ionic liquids. Furthermore, electrochemical impedance measurements using Au working electrodes demonstrated that IL4 TFSI exhibits an exceptionally high EDL capacitance of ∼66 μF/cm 2 , which is ∼6 times as high as those of monomeric ionic liquids so far reported. We also found that an EDL-based field effect transistor (FET) using IL4 TFSI as a gate dielectric material and SrTiO 3 as a channel material displays a very sharp transfer curve with an enhanced carrier accumulation capability of ∼64 μF/cm 2 , as determined by Hall-effect measurements.

  15. Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

    Science.gov (United States)

    Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

    2017-09-01

    Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

  16. Numerical simulation of diffuse double layer around microporous electrodes based on the Poisson–Boltzmann equation

    International Nuclear Information System (INIS)

    Kitazumi, Yuki; Shirai, Osamu; Yamamoto, Masahiro; Kano, Kenji

    2013-01-01

    Graphical abstract: - Highlights: • Diffuse double layers overlap with each other in the micropore. • The overlapping of the diffuse double layer affects the double layer capacitance. • The electric field becomes weak in the micropore. • The electroneutrality is unsatisfactory in the micropore. - Abstract: The structure of the diffuse double layer around a nm-sized micropore on porous electrodes has been studied by numerical simulation using the Poisson–Boltzmann equation. The double layer capacitance of the microporous electrode strongly depends on the electrode potential, the electrolyte concentration, and the size of the micropore. The potential and the electrolyte concentration dependence of the capacitance is different from that of the planner electrode based on the Gouy's theory. The overlapping of the diffuse double layer becomes conspicuous in the micropore. The overlapped diffuse double layer provides the mild electric field. The intensified electric field exists at the rim of the orifice of the micropore because of the expansion of the diffuse double layers. The characteristic features of microporous electrodes are caused by the heterogeneity of the electric field around the micropores

  17. Synthesis and characterization of laurate-intercalated Mg–Al layered double hydroxide prepared by coprecipitation

    DEFF Research Database (Denmark)

    Gerds, Nathalie Christiane; Katiyar, Vimal; Koch, Christian Bender

    2012-01-01

    Effective utilization of layered double hydroxides (LDH) for industrial applications requires the synthesis of pure and well-defined LDH phases. In the present study, dodecanoate (laurate) anions were intercalated into Mg–Al-layered double hydroxide (LDH-C12) by coprecipitation in the presence of...

  18. The electric double layer put to work : thermal physics at electrochemical interfaces

    NARCIS (Netherlands)

    Janssen, M.A.

    2017-01-01

    Where charged electrode surfaces meet fluids that contain mobile ions, so-called electric double layers (EDLs) form to screen the electric surface charge by a diffuse cloud of counterionic charge in the fluid phase. This double layer has been studied for over a century and is of paramount importance

  19. Electroresistance Effect in Gold Thin Film Induced by Ionic-Liquid-Gated Electric Double Layer

    NARCIS (Netherlands)

    Nakayama, Hiroyasu; Ye, Jianting; Ohtani, Takashi; Fujikawa, Yasunori; Ando, Kazuya; Iwasa, Yoshihiro; Saitoh, Eiji

    Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with

  20. Large-amplitude double layers in a dusty plasma with an arbitrary ...

    Indian Academy of Sciences (India)

    Formation of large-amplitude double layers in a dusty plasma whose constituents are electrons, ions, warm dust grains and positive ion beam are studied using Sagdeev's pseudopotential technique. Existence of double layers is investigated. It is found that both the temperature of dust particles and ion beam temperature ...

  1. Double-layer structure in polar mesospheric clouds observed from SOFIE/AIM

    Directory of Open Access Journals (Sweden)

    H. Gao

    2017-02-01

    Full Text Available Double-layer structures in polar mesospheric clouds (PMCs are observed by using Solar Occultation for Ice Experiment (SOFIE data between 2007 and 2014. We find 816 and 301 events of double-layer structure with percentages of 10.32 and 7.25 % compared to total PMC events, and the mean distances between two peaks are 3.06 and 2.73 km for the Northern Hemisphere (NH and Southern Hemisphere (SH respectively. Double-layer PMCs almost always have less mean ice water content (IWC than daily IWC during the core of the season, but they are close to each other at the beginning and the end. The result by averaging over all events shows that the particle concentration has obvious double peaks, while the particle radius exhibits an unexpected monotonic increase with decreasing altitude. By further analysis of the background temperature and water vapour residual profiles, we conclude that the lower layer is a reproduced one formed at the bottom of the upper layer. 56.00 and 47.51 % of all double-layer events for the NH and SH respectively have temperature enhancements larger than 2 K locating between their double peaks. The longitudinal anti-correlation between the gravity waves' (GWs' potential energies and occurrence frequencies of double-layer PMCs suggests that the double-layer PMCs tend to form in an environment where the GWs have weaker intensities.

  2. Experimental validation of sound field control with a circular double-layer array of loudspeakers

    DEFF Research Database (Denmark)

    Chang, Jiho; Jacobsen, Finn

    2013-01-01

    This paper is concerned with experimental validation of a recently proposed method of controlling sound fields with a circular double-layer array of loudspeakers [Chang and Jacobsen, J. Acoust. Soc. Am. 131(6), 4518-4525 (2012)]. The double-layer of loudspeakers is realized with 20 pairs of closed...

  3. Coulomb drag in anisotropic systems: a theoretical study on a double-layer phosphorene

    NARCIS (Netherlands)

    Saberi-Pouya, S.; Vazifehshenas, T.; Farmanbar Gelepordsari, M.; Salavati-Fard, T.

    2016-01-01

    We theoretically study the Coulomb drag resistivity in a double-layer electron system with highly anisotropic parabolic band structure using Boltzmann transport theory. As an example, we consider a double-layer phosphorene on which we apply our formalism. This approach, in principle, can be tuned

  4. Effect of negative ions on the formation of weak ion acoustic double layers

    International Nuclear Information System (INIS)

    Kalita, M.K.; Bujarbarua, S.

    1985-01-01

    Using kinetic theory, small amplitude double layers associated with ion acoustic waves in a plasma containing negative species of ions were investigated. Analytic solution for the double layer potential was carried out. The limiting values of the negative ion density for the existence of this type of DL were calculated and the application of this result to space plasmas is discussed. (author)

  5. Double Layer of a Gold Electrode Probed by AFM Force Measurements

    NARCIS (Netherlands)

    Barten, D.; Kleijn, J.M.; Duval, J.F.L.; Leeuwen, van H.P.; Lyklema, J.; Cohen Stuart, M.A.

    2003-01-01

    Colloidal probe atomic force microscopy was used to determine the electric double layer interactions between a gold electrode and a spherical silica probe. The double layer properties of the gold/solution interface were varied through the pH and salt concentration of the electrolyte, as well as by

  6. Current limitation by an electric double layer in ion laser discharges

    International Nuclear Information System (INIS)

    Torven, S.

    1977-12-01

    A theory for current limitation in ion laser discharges is investigated. The basic mechanism considered is saturation of the positive ion flux at an electric double layer by the limited flux of neutral atoms. The result is compared with a recently published synthesis of a large number of experimental data which agree well with those predicted by the double layer model

  7. Adhesion between coating layers based on epoxy and silicone

    DEFF Research Database (Denmark)

    Svendsen, Jacob R.; Kontogeorgis, Georgios; Kiil, Søren

    2007-01-01

    The adhesion between a silicon tie-coat and epoxy primers, used in marine coating systems, has been studied in this work. Six epoxy coatings (with varying chain lengths of the epoxy resins), some of which have shown problems with adhesion to the tie-coat during service life, have been considered....... The experimental investigation includes measurements of the surface tension of the tie-coat and the critical surface tensions of the epoxies, topographic investigation of the surfaces of cured epoxy coatings via atomic force microscopy (AFM), and pull-off tests for investigating the strength of adhesion...... to the silicon/epoxy systems. Calculations for determining the roughness factor of the six epoxy coatings (based on the AFM topographies) and the theoretical work of adhesion have been carried out. The coating surfaces are also characterized based on the van Oss-Good theory. Previous studies on the modulus...

  8. Effects of silicon:carbon P+ layer interfaces on solar cells

    International Nuclear Information System (INIS)

    Jeffrey, F.R.; Vernstrom, G.D.; Weber, M.F.; Gilbert, J.R.

    1987-01-01

    Results are presented showing the effects on amorphous silicon (a-Si) photovoltaic performance of the interfaces associated with a silicon carbide (a-Si:C) p+ layer. Carbon grading into the intrinsic layer from the p+ layer increases open circuit voltage (Voc) from 0.7V to 0.88V. This effect is very similar to the boron profile effect reported earlier and supports the contention that Voc is being limited by an electron current at the p-i interface. The interface between the p+ a-Si:C layer and the transparent conductive oxide (TCO) is shown to be a potential source of high series resistance, with an abrupt interface showing the most serious problem. The effect is explained by electron injection from the TCO into the p+ layer being inhibited as a result of band mismatch

  9. Detection of charged particles in amorphous silicon layers

    International Nuclear Information System (INIS)

    Kaplan, S.N.; Morel, J.R.; Mulera, T.A.; Perez-Mendez, V.; Schnurmacher, G.; Street, R.A.

    1985-10-01

    The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics. 4 refs., 7 figs

  10. Charged particle detectors made from thin layers of amorphous silicon

    International Nuclear Information System (INIS)

    Morel, J.R.

    1986-05-01

    A series of experiments was conducted to determine the feasibility of using hydrogenated amorphous silicon (α-Si:H) as solid state thin film charged particle detectors. 241 Am alphas were successfully detected with α-Si:H devices. The measurements and results of these experiments are presented. The problems encountered and changes in the fabrication of the detectors that may improve the performance are discussed

  11. Fatigue crack layer propagation in silicon-iron

    Science.gov (United States)

    Birol, Y.; Welsch, G.; Chudnovsky, A.

    1986-01-01

    Fatigue crack propagation in metal is almost always accompanied by plastic deformation unless conditions strongly favor brittle fracture. The analysis of the plastic zone is crucial to the understanding of crack propagation behavior as it governs the crack growth kinetics. This research was undertaken to study the fatigue crack propagation in a silicon iron alloy. Kinetic and plasticity aspects of fatigue crack propagation in the alloy were obtained, including the characterization of damage evolution.

  12. Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

    Energy Technology Data Exchange (ETDEWEB)

    Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.; Trapeznikova, I. N.; Bobyl, A. V.; Terukova, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A model of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.

  13. An investigation of the double layers caused by space vehicles moving through the ionosphere

    International Nuclear Information System (INIS)

    Liu Sanqiu; Liao Jingjing

    2010-01-01

    On the basis of non-steady-state nonlinear coupling equations of high-frequency field, density disturbance and potential, the evolution of double layers in the wake region of space vehicles moving through the ionosphere is numerically simulated in the non-static limit case. The results show that the interactions among plasmas, the vehicle and high-frequency electromagnetic waves radiated from the antenna system of the vehicle can lead to the formation of double layers. It is shown that the double layer is a nonlinear entity-caviton. Potential disturbance far away from the vehicle and the peak value of potential near the vehicle in the double layer are obvious. This is very important for detecting space vehicles with a stealth characteristic and preventing space vehicles from being harmed by double layers.

  14. Adsorption of procion red using layer double hydroxide Mg/Al

    Directory of Open Access Journals (Sweden)

    Muhammad Imron

    2017-07-01

    Full Text Available Layer double hydroxide Mg/Al was synthesized by inorganic synthetic method. Material was characterized using FTIR and XRD analyses and used as adsorbent of procion red dye in aqueous medium.  Factors that affect the adsorption process are adsorption time as the kinetic parameter; and the temperature and concentration of procion red as the thermodynamic parameter. FTIR spectra of layer double hydroxides showed unique vibration at wavenumber 1300 cm-1 and 1600 cm-1. Characterization using XRD shows diffraction angles at 29o, 27o, and 28o, which are typical of Mg/Al double layer hydroxides. Adsorption of procion red using layer double hydroxide Mg/Al resulted adsorption rate 7.1 minutes-1, maximum adsorption capacity 111.1 mg/g at 60 oC with increasing energy by increasing adsorption temperature.   Keywords: Layered double hydroxides, adsorption, procion red.

  15. Development of polymer nanocomposites based on layered double hydroxides

    Directory of Open Access Journals (Sweden)

    Sipusic, J.

    2009-05-01

    Full Text Available Polymeric nanocomposites are commonly considered as systems composed of a polymeric matrix and - usually inorganic - filler. The types of nanofillers are indicated in Fig. 1. Beside wellknown layered silicate fillers, recent attention is attracted to layered double hydroxide fillers (LDH, mainly of synthetic origin. The structure of LDH is based on brucite, or magnesium hydroxide, Mg(OH2 and is illustrated in Fig. 2. The modification of LDHs is commonly done by organic anions, to increase the original interlayer distance and to improve the organophilicity of the filler, keeping in mind their final application as fillers for, usually hydrophobic, polymer matrices. We have used the modified rehydration procedure for preparing organically modified LDH. The stoichiometric quantities of Ca33Al2O6, CaO and benzoic (B (or undecenoic (U acid were mixed with water and some acetone. After long and vigorous shaking, the precipitated fillers were washed, dried and characterized. X-ray diffraction method (XRD has shown the increase of the original interlayer distance for unmodified LDH (OH–-saturated of 0.76 nm to the 1.6 nm in LDH-B or LDH-U fillers (Fig. 3. Infrared spectroscopy method (FTIR has confirmed the incorporation of benzoic anion within the filler layers (Fig. 4. For the preparation of LDH-B and LDH-U composites with polystyrene (PS, poly(methyl methacrylate (PMMA and copolymer (SMMA matrices, a two-step in situ bulk radical polymerization was selected (Table 1 for recipes, azobisisobutyronitrile as initiator, using conventional stirred tank reactor in the first step, and heated mold with the movable wall (Fig. 6 in the second step of polymerization. All the prepared composites with LDH-U fillers were macroscopically phase-separated, as was the PMMA/LDH-B composite.PS/LDH-B and SMMA/LDH-B samples were found to be transparent and were further examined for deduction of their structure (Fig. 5 and thermal properties. FTIR measurements showed that

  16. Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

    International Nuclear Information System (INIS)

    Lin, C.-Y.; Fang, Y.-K.; Chen, S.-F.; Lin, P.-C.; Lin, C.-S.; Chou, T.-H; Hwang, J.S.; Lin, K.I.

    2006-01-01

    High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400 nm, while that for fast visible photo-detecting is 17 with film thickness of 3400 nm

  17. Ellipsometry measurements of thickness of oxide and water layers on spherical and flat silicon surfaces

    International Nuclear Information System (INIS)

    Kenny, M.J.; Netterfield, R.; Wielunski, L.S.

    1998-01-01

    Full text: Ellipsometry has been used to measure the thickness of oxide layers on single crystal silicon surfaces, both flat and spherical and also to measure the extent of adsorption of moisture on the surface as a function of partial water vapour pressure. The measurements form part of an international collaborative project to make a precise determination of the Avogadro constant (ΔN A /N A -8 ) which will then be used to obtain an absolute definition of the kilogram, rather than one in terms of an artefact. Typically the native oxide layer on a cleaned silicon wafer is about 2 nm thick. On a polished sphere this oxide layer is typically 8 to 10 nm thick, the increased thickness being attributed to parameters related to the polishing process. Ellipsometry measurements on an 89 mm diameter polished silicon sphere at both VUW and CSIRO indicated a SiO 2 layer at 7 to 10 nm thick. It was observed that this thickness varied regularly. The crystal orientation of the sphere was determined using electron patterns generated from an electron microscope and the oxide layer was then measured through 180 arcs of great circles along (110) and (100) planes. It was observed that the thickness varied systematically with orientation. The minimum thickness was 7.4 nm at the axis (softest direction in silicon) and the greatest thickness was 9.5 nm at the axis (hardest direction in silicon). This is similar to an orientation dependent cubic pattern which has been observed to be superimposed on polished silicon spheres. At VUW, the sphere was placed in an evacuated bell jar and the ellipsometry signal was observed as the water vapour pressure was progressively increased up to saturation. The amount of water vapour adsorbed at saturation was one or two monolayers, indicating that the sphere does not wet

  18. Etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon

    International Nuclear Information System (INIS)

    Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R.; Acero, M.C. Esteve, J.; Montserrat, J.; El-Hassani, A.

    1996-01-01

    In this work the etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon is studied as a function of the processing parameters, the implantation dose and temperature, and the presence of capping layers during implantation. Etching characteristics have been probed using tetramethylammonium hydroxide or KOH solutions for different times up to 6 h. Results show that, after annealing, the minimum dose required for the formation of an efficient etch-stop layer is about 4 x 10 17 cm -2 , for an implantation energy of 75 keV. This is defined as a layer with an efficient etch selectivity in relation to Si of s ≥ 100. For larger implantation doses efficient etch selectivities larger than 100 are obtained. However, for these doses a considerable density of pits is observed in the etch-stop layer. These are related to the presence of nitrogen poor Si regions in the buried layer after annealing, due to a partial separation of silicon and silicon nitride phases during the annealing process. The influence of this separation of phases as well as nitrogen gettering in the buried layer on the etch-stop behavior is discussed as a function of the processing parameters

  19. THE 15 LAYER SILICON DRIFT DETECTOR TRACKER IN EXPERIMENT 896

    International Nuclear Information System (INIS)

    Pandey, S.U.

    1998-01-01

    Large linear silicon drift detectors have been developed and are in production for use in several experiments. Recently 15 detectors were used as a tracking device in BNL-AGS heavy ion experiment (E896). The detectors were successfully operated in a 6.2 T magnetic field. The behavior of the detectors, such as drift uniformity, resolution, and charge collection efficiency are presented. The effect of the environment on the detector performance is discussed. Some results from the experimental run are presented. The detectors performed well in an experimental environment. This is the first tracking application of these detectors

  20. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  1. Layered assembly of graphene oxide and Co-Al layered double hydroxide nanosheets as electrode materials for supercapacitors.

    Science.gov (United States)

    Wang, Lei; Wang, Dong; Dong, Xin Yi; Zhang, Zhi Jun; Pei, Xian Feng; Chen, Xin Jiang; Chen, Biao; Jin, Jian

    2011-03-28

    An innovative strategy of fabricating electrode material by layered assembling two kinds of one-atom-thick sheets, carboxylated graphene oxide (GO) and Co-Al layered double hydroxide nanosheet (Co-Al LDH-NS) for the application as a pseudocapacitor is reported. The Co-Al LDH-NS/GO composite exhibits good energy storage properties.

  2. Analysis of buried etch-stop layers in silicon by nitrogen-ion implantation

    International Nuclear Information System (INIS)

    Acero, M.C.; Esteve, J.; Montserrat, J.; Perez-Rodriguez, A.; Garrido, B.; Romano-Rodriguez, A.; Morante, J.R.

    1993-01-01

    The analysis of the etch-stop properties of layers obtained by substoichiometric nitrogen-ion implantation and annealing in silicon has been performed as a function of the implantation conditions. The analysis of the etching efficiency has been tested in TMAH-IPA systems. The results obtained show the need to implant at doses higher than 2 x 10 17 cm -2 to obtain etch-stop layers stable under high-temperature annealing. So, for implantation doses of 5 x 10 17 cm -2 , layers stand unetched for times longer than 2 h. The preliminary structural analysis of the samples suggests the presence of an amorphous silicon nitride layer for higher implantation doses. (author)

  3. Analysis of buried etch-stop layers in silicon by nitrogen-ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Acero, M.C.; Esteve, J.; Montserrat, J. (Centro Nacional de Microelectronica (CNM-CSIC), Bellaterra (Spain)); Perez-Rodriguez, A.; Garrido, B.; Romano-Rodriguez, A.; Morante, J.R. (Barcelona Univ. (Spain). Dept. Fisica Aplicada i Electronica)

    1993-09-01

    The analysis of the etch-stop properties of layers obtained by substoichiometric nitrogen-ion implantation and annealing in silicon has been performed as a function of the implantation conditions. The analysis of the etching efficiency has been tested in TMAH-IPA systems. The results obtained show the need to implant at doses higher than 2 x 10[sup 17] cm[sup -2] to obtain etch-stop layers stable under high-temperature annealing. So, for implantation doses of 5 x 10[sup 17] cm[sup -2], layers stand unetched for times longer than 2 h. The preliminary structural analysis of the samples suggests the presence of an amorphous silicon nitride layer for higher implantation doses. (author).

  4. Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

    Science.gov (United States)

    Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

    2017-10-01

    An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

  5. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

    Directory of Open Access Journals (Sweden)

    Taweewat Krajangsang

    2014-01-01

    Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

  6. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    Science.gov (United States)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  7. Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

    Science.gov (United States)

    Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

    2018-01-01

    The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

  8. On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers

    NARCIS (Netherlands)

    van Assche, F. J. H.; Unnikrishnan, S.; Michels, J. J.; van Mol, A. M. B.; van de Weijer, P.; M. C. M. van de Sanden,; Creatore, M.

    2014-01-01

    We report on a low substrate temperature (110 °C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic

  9. Preparation and characterization of tempered tungsten layers on single crystalline silicon

    International Nuclear Information System (INIS)

    Nitzsche, K.; Knedlik, C.; Tippmann, H.; Spiess, L.; Harman, R.; Vanek, O.; Tvarozek, V.

    1984-01-01

    Tungsten layers have been deposited on single crystalline silicon by sputtering and characterized by measurements of the sheet resistance by a linear four point method and the van der Pauw method. The influence of tempering under argon on the resistance has been studied. By means of the RBS spectroscopy it was found that the increase in the specific resistance is caused by interdiffusion

  10. Thin-Film layers with Interfaces that reduce RF Losses on High-Resistivity Silicon Substrates

    NARCIS (Netherlands)

    Evseev, S. B.; Milosavljevic, S.; Nanver, L. K.

    2017-01-01

    Radio-Frequency (RF) losses on High-Resistivity Silicon (HRS) substrates were studied for several different surface passivation layers comprising thin-films of SiC, SiN and SiO2 In many combinations, losses from conductive surface channels were reduced and increasing the number of interfaces between

  11. Large amplitude ion-acoustic solitary waves and double layers in multicomponent plasma with positrons

    International Nuclear Information System (INIS)

    Sabry, R.

    2009-01-01

    A finite amplitude theory for ion-acoustic solitary waves and double layers in multicomponent plasma consisting of hot positrons, cold ions, and electrons with two-electron temperature distributions is presented. Conditions are obtained under which large amplitude stationary ion-acoustic solitary waves and double layers can exist. For the physical parameters of interest, the ion-acoustic solitary wave (double layers) profiles and the relationship between the maximum soliton (double layers) amplitude and the Mach number are found. Also, we have presented the region of existence of the large amplitude ion-acoustic waves by analyzing the structure of the pseudopotential. For the selected range of parameters, it is found that only positive solitary waves and double layers can exist. An analysis for the small amplitude limit through the Sagdeev pseudopotential analysis and the reductive perturbation theory shows the existence of positive and negative ion-acoustic solitary waves and double layers. The effects of positron concentration and temperature ratio on the characteristics of the solitary ion-acoustic waves and double layers (namely, the amplitude and width) are discussed in detail. The relevance of this investigation to space and laboratory plasmas is pointed out.

  12. Influence of the charge double layer on solid oxide fuel cell stack behavior

    Science.gov (United States)

    Whiston, Michael M.; Bilec, Melissa M.; Schaefer, Laura A.

    2015-10-01

    While the charge double layer effect has traditionally been characterized as a millisecond phenomenon, longer timescales may be possible under certain operating conditions. This study simulates the dynamic response of a previously developed solid oxide fuel cell (SOFC) stack model that incorporates the charge double layer via an equivalent circuit. The model is simulated under step load changes. Baseline conditions are first defined, followed by consideration of minor and major deviations from the baseline case. This study also investigates the behavior of the SOFC stack with a relatively large double layer capacitance value, as well as operation of the SOFC stack under proportional-integral (PI) control. Results indicate that the presence of the charge double layer influences the SOFC stack's settling time significantly under the following conditions: (i) activation and concentration polarizations are significantly increased, or (ii) a large value of the double layer capacitance is assumed. Under normal (baseline) operation, on the other hand, the charge double layer effect diminishes within milliseconds, as expected. It seems reasonable, then, to neglect the charge double layer under normal operation. However, careful consideration should be given to potential variations in operation or material properties that may give rise to longer electrochemical settling times.

  13. Photon induced non-linear quantized double layer charging in quaternary semiconducting quantum dots.

    Science.gov (United States)

    Nair, Vishnu; Ananthoju, Balakrishna; Mohapatra, Jeotikanta; Aslam, M

    2018-03-15

    Room temperature quantized double layer charging was observed in 2 nm Cu 2 ZnSnS 4 (CZTS) quantum dots. In addition to this we observed a distinct non-linearity in the quantized double layer charging arising from UV light modulation of double layer. UV light irradiation resulted in a 26% increase in the integral capacitance at the semiconductor-dielectric (CZTS-oleylamine) interface of the quantum dot without any change in its core size suggesting that the cause be photocapacitive. The increasing charge separation at the semiconductor-dielectric interface due to highly stable and mobile photogenerated carriers cause larger electrostatic forces between the quantum dot and electrolyte leading to an enhanced double layer. This idea was supported by a decrease in the differential capacitance possible due to an enhanced double layer. Furthermore the UV illumination enhanced double layer gives us an AC excitation dependent differential double layer capacitance which confirms that the charging process is non-linear. This ultimately illustrates the utility of a colloidal quantum dot-electrolyte interface as a non-linear photocapacitor. Copyright © 2017 Elsevier Inc. All rights reserved.

  14. A COMPARATIVE STUDY OF SINGLE VERSUS DOUBLE LAYER CLOSURE ON LOWER SEGMENT CAESAREAN SCAR

    Directory of Open Access Journals (Sweden)

    Kirtirekha Mohapatra

    2016-10-01

    Full Text Available BACKGROUND There are few issues in modern obstetrics that have been as controversial as management of a woman with a prior caesarean delivery. Hence, it is required to have evidence based correct practice of this surgical procedure. Healing of the uterine incision and the strength of the scar should be the most important consideration. The aim of the study is to compare the effect of technique of uterine closure (Single Layer vs. Double Layer on subsequent pregnancies and to find out, which technique has a better maternal and neonatal outcome by strengthening the scar. MATERIALS AND METHODS 500 cases of previous caesarean section pregnancies were taken, 250 from single layer closure group and 250 from double layer closure group. The mode of delivery during present pregnancy was noted. Integrity of scar, thickness of scar, presence of adhesion were documented. The neonates were observed. Results were compared so as to draw an inference about the better method. RESULTS Mean age between the two groups were similar. Majority did not have history of premature rupture of membrane during previous pregnancy. Postoperative complications were more when double layer closure of uterine scar was done in index surgery. Interpregnancy gap of <3 years was more commonly present in double layer closure group (52.8% in double layer versus 34.8% in single layer. Single layer had more scar tenderness (21.2%, thinned out scars (34.6%, incomplete ruptures (7.1% and complete ruptures (2.8% than double layer closure group. Neonatal outcomes were not statistically different in both the groups. CONCLUSION Double layer uterine closure seems to have better impact on scar integrity as compared to single layer uterine closure.

  15. Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer.

    Science.gov (United States)

    Zhang, Zhaojing; Yao, Liyong; Zhang, Yi; Ao, Jianping; Bi, Jinlian; Gao, Shoushuai; Gao, Qing; Jeng, Ming-Jer; Sun, Guozhong; Zhou, Zhiqiang; He, Qing; Sun, Yun

    2018-02-01

    Double layer distribution exists in Cu 2 SnZnSe 4 (CZTSe) thin films prepared by selenizing the metallic precursors, which will degrade the back contact of Mo substrate to absorber layer and thus suppressing the performance of solar cell. In this work, the double-layer distribution of CZTSe film is eliminated entirely and the formation of MoSe 2 interfacial layer is inhibited successfully. CZTSe film is prepared by selenizing the precursor deposited by electrodeposition method under Se and SnSe x mixed atmosphere. It is found that the insufficient reaction between ZnSe and Cu-Sn-Se phases in the bottom of the film is the reason why the double layer distribution of CZTSe film is formed. By increasing Sn content in the metallic precursor, thus making up the loss of Sn because of the decomposition of CZTSe and facilitate the diffusion of liquid Cu 2 Se, the double layer distribution is eliminated entirely. The crystallization of the formed thin film is dense and the grains go through the entire film without voids. And there is no obvious MoSe 2 layer formed between CZTSe and Mo. As a consequence, the series resistance of the solar cell reduces significantly to 0.14 Ω cm 2 and a CZTSe solar cell with efficiency of 7.2% is fabricated.

  16. Experimental investigation of Cu-based, double-layered, microchannel heat exchangers

    International Nuclear Information System (INIS)

    Lu, Bin; Meng, W J; Mei, Fanghua

    2013-01-01

    Cu-based, single- and double-layered, microchannel heat exchangers (MHEs) were fabricated and assembled. Comparative measurements on liquid flow characteristics and heat transfer performance were conducted on these devices. Results were compared at the individual microchannel level as well as at the device level. The present results demonstrate that double-layered MHEs exhibit similar heat transfer performance while suffering a much lower pressure drop penalty compared to single-layered MHEs. Another Cu-based, double-layered, liquid–liquid counter-flow MHE was fabricated, assembled and tested. Results show that a low-volume, multilayered, high-performance, liquid-to-liquid MHE is achievable following the manufacturing protocols of the present double-layered, liquid–liquid counter-flow MHE. (paper)

  17. Electronic spectra of anions intercalated in layered double hydroxides

    Indian Academy of Sciences (India)

    groups of the layers and interlayer water through the termi- nal atom symmetry ... results in a reaction with the metal hydroxide layers lead- ing to the ..... List of band positions observed for potassium salts of anion and LDH samples. Salts.

  18. Biomechanical evaluation of knotless anatomical double-layer double-row rotator cuff repair: a comparative ex vivo study.

    Science.gov (United States)

    Hepp, Pierre; Osterhoff, Georg; Engel, Thomas; Marquass, Bastian; Klink, Thomas; Josten, Christoph

    2009-07-01

    The layered configuration of the rotator cuff tendon is not taken into account in classic rotator cuff tendon repair techniques. The mechanical properties of (1) the classic double-row technique, (2) a double-layer double-row (DLDR) technique in simple suture configuration, and (3) a DLDR technique in mattress suture configuration are significantly different. Controlled laboratory study. Twenty-four sheep shoulders were assigned to 3 repair groups of full-thickness infraspinatus tears: group 1, traditional double-row repair; group 2, DLDR anchor repair with simple suture configuration; and group 3, DLDR knotless repair with mattress suture configuration. After ultrasound evaluation of the repair, each specimen was cyclically loaded with 10 to 100 N for 50 cycles. Each specimen was then loaded to failure at a rate of 1 mm/s. There were no statistically significant differences among the 3 testing groups for the mean footprint area. The cyclic loading test revealed no significant difference among the 3 groups with regard to elongation. For the load-to-failure test, groups 2 and 3 showed no differences in ultimate tensile load when compared with group 1. However, when compared to group 2, group 3 was found to have significantly higher values regarding ultimate load, ultimate elongation, and energy absorbed. The DLDR fixation techniques may provide strength of initial repair comparable with that of commonly used double-row techniques. When compared with the knotless technique with mattress sutures, simple suture configuration of DLDR repair may be too weak. Knotless DLDR rotator cuff repair may (1) restore the footprint by the use of double-row principles and (2) enable restoration of the shape and profile. Double-layer double-row fixation in mattress suture configuration has initial fixation strength comparable with that of the classic double-row fixation and so may potentially improve functional results of rotator cuff repair.

  19. A double sided silicon strip detector as a DRAGON end detector

    CERN Document Server

    Wrede, C; Rogers, J G; D'Auria, J M

    2003-01-01

    The new DRAGON facility (detector of recoils and gammas of nuclear reactions), located at the TRlUMF-ISAC Radioactive Beams facility in Vancouver, Canada is now operational. This facility is used to study radiative proton capture reactions in inverse kinematics (heavy ion beam onto a light gaseous target) with both stable beams and radioactive beams of mass A=13-26 in the energy range 0.15-1.5 MeV/u. A double sided silicon strip detector (DSSSD) has been used to detect recoil ions. Tests have been performed to determine the performance of this DSSSD.

  20. Flat-top passband filter based on parallel-coupled double microring resonators in silicon

    Science.gov (United States)

    Huang, Qingzhong; Xiao, Xi; Li, Yuntao; Li, Zhiyong; Yu, Yude; Yu, Jinzhong

    2009-08-01

    Optical filters with box-like response were designed and realized based on parallel-coupled double microrings in silicon-on-insulator. The properties of this design are simulated, considering the impact of the center-to-center distance of two rings, and coupling efficiency. Flat-top passband in the drop channel of the fabricated device was demonstrated with a 1dB bandwidth of 0.82nm, a 1dB/10dB bandwidth ratio of 0.51, an out of band rejection ratio of 14.6dB, as well as a free spectrum range of 13.6nm.

  1. Effects of the interstrip gap on the efficiency and response of Double Sided Silicon Strip Detectors

    Directory of Open Access Journals (Sweden)

    Torresi D.

    2016-01-01

    Full Text Available In this work the effects of the segmentation of the electrodes of Double Sided Silicon Strip Detectors (DSSSDs are investigated. In order to characterize the response of the DSSSDs we perform a first experiment by using tandem beams of different energies directly sent on the detector and a second experiment by mean of a proton microbeam. Results show that the effective width of the inter-strip region and the efficiency for full energy detection, varies with both detected energy and bias voltage. The experimental results are qualitatively reproduced by a simplified model based on the Shockley-Ramo-Gunn framework.

  2. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    International Nuclear Information System (INIS)

    Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

    2016-01-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  3. Efficient uranium capture by polysulfide/layered double hydroxide composites.

    Science.gov (United States)

    Ma, Shulan; Huang, Lu; Ma, Lijiao; Shim, Yurina; Islam, Saiful M; Wang, Pengli; Zhao, Li-Dong; Wang, Shichao; Sun, Genban; Yang, Xiaojing; Kanatzidis, Mercouri G

    2015-03-18

    There is a need to develop highly selective and efficient materials for capturing uranium (normally as UO2(2+)) from nuclear waste and from seawater. We demonstrate the promising adsorption performance of S(x)-LDH composites (LDH is Mg/Al layered double hydroxide, [S(x)](2-) is polysulfide with x = 2, 4) for uranyl ions from a variety of aqueous solutions including seawater. We report high removal capacities (q(m) = 330 mg/g), large K(d)(U) values (10(4)-10(6) mL/g at 1-300 ppm U concentration), and high % removals (>95% at 1-100 ppm, or ∼80% for ppb level seawater) for UO2(2+) species. The S(x)-LDHs are exceptionally efficient for selectively and rapidly capturing UO2(2+) both at high (ppm) and trace (ppb) quantities from the U-containing water including seawater. The maximum adsorption coeffcient value K(d)(U) of 3.4 × 10(6) mL/g (using a V/m ratio of 1000 mL/g) observed is among the highest reported for U adsorbents. In the presence of very high concentrations of competitive ions such as Ca(2+)/Na(+), S(x)-LDH exhibits superior selectivity for UO2(2+), over previously reported sorbents. Under low U concentrations, (S4)(2-) coordinates to UO2(2+) forming anionic complexes retaining in the LDH gallery. At high U concentrations, (S4)(2-) binds to UO2(2+) to generate neutral UO2S4 salts outside the gallery, with NO3(-) entering the interlayer to form NO3-LDH. In the presence of high Cl(-) concentration, Cl(-) preferentially replaces [S4](2-) and intercalates into LDH. Detailed comparison of U removal efficiency of S(x)-LDH with various known sorbents is reported. The excellent uranium adsorption ability along with the environmentally safe, low-cost constituents points to the high potential of S(x)-LDH materials for selective uranium capture.

  4. Silicon protected with atomic layer deposited TiO2

    DEFF Research Database (Denmark)

    Seger, Brian; Tilley, S. David; Pedersen, Thomas

    2013-01-01

    The present work demonstrates that tuning the donor density of protective TiO2 layers on a photocathode has dramatic consequences for electronic conduction through TiO2 with implications for the stabilization of oxidation-sensitive catalysts on the surface. Vacuum annealing at 400 °C for 1 hour o...

  5. Silicon protected with atomic layer deposited TiO2

    DEFF Research Database (Denmark)

    Seger, Brian; Tilley, David S.; Pedersen, Thomas

    2013-01-01

    The semiconducting materials used for photoelectrochemical (PEC) water splitting must withstand the corrosive nature of the aqueous electrolyte over long time scales in order to be a viable option for large scale solar energy conversion. Here we demonstrate that atomic layer deposited titanium di...

  6. Influence of germanium on thermal dewetting and agglomeration of the silicon template layer in thin silicon-on-insulator

    International Nuclear Information System (INIS)

    Zhang, P P; Yang, B; Rugheimer, P P; Roberts, M M; Savage, D E; Lagally, M G; Liu Feng

    2009-01-01

    We investigate the influence of heteroepitaxially grown Ge on the thermal dewetting and agglomeration of the Si(0 0 1) template layer in ultrathin silicon-on-insulator (SOI). We show that increasing Ge coverage gradually destroys the long-range ordering of 3D nanocrystals along the (1 3 0) directions and the 3D nanocrystal shape anisotropy that are observed in the dewetting and agglomeration of pure SOI(0 0 1). The results are qualitatively explained by Ge-induced bond weakening and decreased surface energy anisotropy. Ge lowers the dewetting and agglomeration temperature to as low as 700 0 C.

  7. Analysis of borophosphosilicate glass layers on silicon wafers by X-ray emission from photon and electron excitation

    International Nuclear Information System (INIS)

    Elgersma, O.; Borstrok, J.J.M.

    1989-01-01

    Phosphorus and oxygen concentrations in the homogeneous layer of borosilicate glass (BPSG) deposited on Si-integrated circuits are determined by X-ray fluorescence from photon excitation. The X-ray emission from electron excitation in an open X-ray tube instrument yields a sufficiently precise determination of the boron content. The thickness of the layer can be derived from silicon Kα-fluorescence. A calibration model is proposed for photon as well as for electron excitation. The experimentally determined parameters in this model well agree with those derived from fundamental parameters for X-ray absorption and emission. The chemical surrounding of silicon affects strongly the peak profile of the silicon Kβ-emission. This enables to distinguish emission from the silicon atoms in the wafer and from the silicon atoms in the silicon oxide complexes of the BPSG-layer. (author)

  8. A novel durable double-conductive core-shell structure applying to the synthesis of silicon anode for lithium ion batteries

    Science.gov (United States)

    Xing, Yan; Shen, Tong; Guo, Ting; Wang, Xiuli; Xia, Xinhui; Gu, Changdong; Tu, Jiangping

    2018-04-01

    Si/C composites are currently the most commercially viable next-generation lithium-ion battery anode materials due to their high specific capacity. However, there are still many obstacles need to be overcome such as short cycle life and poor conductivity. In this work, we design and successfully synthesis an excellent durable double-conductive core-shell structure p-Si-Ag/C composites. Interestingly, this well-designed structure offers remarkable conductivity (both internal and external) due to the introduction of silver particles and carbon layer. The carbon layer acts as a protective layer to maintain the integrity of the structure as well as avoids the direct contact of silicon with electrolyte. As a result, the durable double-conductive core-shell structure p-Si-Ag/C composites exhibit outstanding cycling stability of roughly 1000 mAh g-1 after 200 cycles at a current density of 0.2 A g-1 and retain 765 mAh g-1 even at a high current density of 2 A g-1, indicating a great improvement in electrochemical performance compared with traditional silicon electrode. Our research results provide a novel pathway for production of high-performance Si-based anodes to extending the cycle life and specific capacity of commercial lithium ion batteries.

  9. Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

    Directory of Open Access Journals (Sweden)

    Goyal Prabal

    2016-01-01

    Full Text Available The use of hexamethyldisiloxane (HMDSO as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

  10. Compact polarization beam splitter for silicon photonic integrated circuits with a 340-nm-thick silicon core layer.

    Science.gov (United States)

    Li, Chenlei; Dai, Daoxin

    2017-11-01

    A polarization beam splitter (PBS) is proposed and realized for silicon photonic integrated circuits with a 340-nm-thick silicon core layer by introducing an asymmetric directional coupler (ADC), which consists of a silicon-on-insulator (SOI) nanowire and a subwavelength grating (SWG) waveguide. The SWG is introduced to provide an optical waveguide which has much higher birefringence than a regular 340-nm-thick SOI nanowire, so that it is possible to make the phase-matching condition satisfied for TE polarization only in the present design when the waveguide dimensions are optimized. Meanwhile, there is a significant phase mismatching for TM polarization automatically. In this way, the present ADC enables strong polarization selectivity to realize a PBS that separates TE and TM polarizations to the cross and through ports, respectively. The realized PBS has a length of ∼2  μm for the coupling region. For the fabricated PBS, the extinction ratio (ER) is 15-30 dB and the excess loss is 0.2-2.6 dB for TE polarization while the ER is 20-27 dB and the excess loss is 0.3-2.8 dB for TM polarization when operating in the wavelength range of 1520-1580 nm.

  11. Analysis of signals propagating in a phononic crystal PZT layer deposited on a silicon substrate.

    Science.gov (United States)

    Hladky-Hennion, Anne-Christine; Vasseur, Jérôme; Dubus, Bertrand; Morvan, Bruno; Wilkie-Chancellier, Nicolas; Martinez, Loïc

    2013-12-01

    The design of a stop-band filter constituted by a periodically patterned lead zirconate titanate (PZT) layer, polarized along its thickness, deposited on a silicon substrate and sandwiched between interdigitated electrodes for emission/reception of guided elastic waves, is investigated. The filter characteristics are theoretically evaluated by using finite element simulations: dispersion curves of a patterned PZT layer with a specific pattern geometry deposited on a silicon substrate present an absolute stop band. The whole structure is modeled with realistic conditions, including appropriate interdigitated electrodes to propagate a guided mode in the piezoelectric layer. A robust method for signal analysis based on the Gabor transform is applied to treat transmitted signals; extract attenuation, group delays, and wave number variations versus frequency; and identify stop-band filter characteristics.

  12. Characterization of the porosity of silicon nitride thin layers by Electrochemical Impedance Spectroscopy

    International Nuclear Information System (INIS)

    Barrès, T.; Tribollet, B.; Stephan, O.; Montigaud, H.; Boinet, M.; Cohin, Y.

    2017-01-01

    Silicon nitride thin films are widely used as diffusion barriers within stacks in the glass industry but turn out to be porous at the nanometric scale. EIS measurements were conducted on SiNx thin layers deposited on a gold layer. An electrochemical model was established to fit the EIS measurements making use of data from other complementary techniques. In particular, Transmission Electron Microscopy was performed on these thin layers to determine the diameter and the qualitative morphology of the pores. A quantitative determination of the through-porosity of the layer was deduced from the EIS model and was in good agreement with TEM measurements. Moreover, combining EIS with local observations enabled inhomogeneities in the layer to be probed by highlighting a specific region in the layer.

  13. Periodic molybdenum disc array for light trapping in amorphous silicon layer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jiwei; Deng, Changkai [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China); Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Yang, Kang; Chen, Haiyan, E-mail: chenhy@sari.ac.cn; Li, Dongdong; Chen, Xiaoyuan [Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Ren, Wei, E-mail: renwei@shu.edu.cn [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China)

    2016-05-15

    We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO{sub 2}. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.

  14. The effect of oxidation on physical properties of porous silicon layers for optical applications

    Energy Technology Data Exchange (ETDEWEB)

    Pirasteh, Parasteh [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Charrier, Joel [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France)]. E-mail: joel.charrier@univ-rennes1.fr; Soltani, Ali [Institut d' Electronique, de Microemectronique et de Nanotechnologie, CNRS-UMR 8520, Cite Scientifique Avenue Poincare, BP 69, 59652 Villeneuve d' Ascq Cedex (France); Haesaert, Severine [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Haji, Lazhar [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Godon, Christine [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France); Errien, Nicolas [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France)

    2006-12-15

    In order to understand the optical loss mechanisms in porous silicon based waveguides, structural and optical studies have been performed. Scanning and transmission electron microscopic observations of porous silicon layers are obtained before and after an oxidation process at high temperature in wet O{sub 2}. Pore size and shape of heavily p-type doped Si wafers are estimated and correlated to the optical properties of the material before and after oxidation. The refractive index was measured and compared to that determined by the Bruggeman model.

  15. Measurement of mobility profile in ion-implanted silicon layers using electroreflection spectroscopy

    International Nuclear Information System (INIS)

    Galiev, G.B.; Kapaev, V.V.; Mokerov, V.G.

    1986-01-01

    The possibility is shown of the application of the low field linearized electroreflection spectroscopy for the measurement of profiles of carriers mobilities μ(x) simultaneously with the concentration profiles N(x) in thin ion-implanted silicon layers. The μ(χ) value is determined from the calibration curve of the dependence of the phenomenological broadening parameter γ on the mobility for uniformly doped samples. The results are presented for the measurements of the profiles μ(x) for boron- and arsenic-implanted silicon

  16. Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

    International Nuclear Information System (INIS)

    Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

    2009-01-01

    An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

  17. Plasmon resonance in single- and double-layer CVD graphene nanoribbons

    DEFF Research Database (Denmark)

    Wang, Di; Emani, Naresh K.; Chung, Ting Fung

    2015-01-01

    Dynamic tunability of the plasmonic resonance in graphene nanoribbons is desirable in the near-infrared. We demonstrated a constant blue shift of plasmonic resonances in double-layer graphene nanoribbons with respect to single-layer graphene nanoribbons. © OSA 2015.......Dynamic tunability of the plasmonic resonance in graphene nanoribbons is desirable in the near-infrared. We demonstrated a constant blue shift of plasmonic resonances in double-layer graphene nanoribbons with respect to single-layer graphene nanoribbons. © OSA 2015....

  18. Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon

    Directory of Open Access Journals (Sweden)

    Matias Urdampilleta

    2015-08-01

    Full Text Available Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer because of silicon’s “semiconductor vacuum” character and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability, and scalability. Here, we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum-dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterize the charge dynamics, which reveals a charge T_{2}^{*} of 200 ps and a relaxation time T_{1} of 100 ns. Additionally, we demonstrate a spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.

  19. Studies on electrical double layer capacitor with a low-viscosity ionic ...

    Indian Academy of Sciences (India)

    The performance of an electrical double layer capacitor (EDLC) composed of high surface area acti- vated carbon ... Since the electric energy stored in EDLCs are raised by the ..... capacitance value, observed by us with the present system, is.

  20. Chloride adsorption by calcined layered double hydroxides in hardened Portland cement paste

    KAUST Repository

    Yoon, Seyoon; Moon, Juhyuk; Bae, Sungchul; Duan, Xiaonan; Giannelis, Emmanuel P.; Monteiro, Paulo M.

    2014-01-01

    This study investigated the feasibility of using calcined layered double hydroxides (CLDHs) to prevent chloride-induced deterioration in reinforced concrete. CLDHs not only adsorbed chloride ions in aqueous solution with a memory effect but also had

  1. Conditions for double layers in the Earth's magnetosphere and perhaps in other astrophysical objects

    International Nuclear Information System (INIS)

    Lyons, L.R.

    1987-01-01

    Double layers (i.e., electric fields parallel to B) form along auroral field lines in the Earth's magnetosphere. They form in order to maintain current continuity in the ionosphere in the presence of a magnetospheric electric field E with DEL.E not= O. Features which govern the formation of the double layers are: 1) the divergence of E; 2) the conductivity of the ionosphere; and 3) the current-voltage characteristics of auroral magnetic field lines. Astrophysical situations where DEL.E not= O is applied to a conducting plasma similar to the Earth's ionosphere are potential candidates for the formation of double layers. The region with DEL.E not= O can be generated within, or along field lines connected to, the conducting plasma. In addition to DEL.E, shear neutral flow in the conducting plasma can also form double layers. (author)

  2. Conditions for double layers in the Earth's magnetosphere and perhaps in other astrophysical objects

    International Nuclear Information System (INIS)

    Lyons, L.R.

    1987-01-01

    Double layers form along auroral field lines in the Earth's magnetosphere. They form in order to maintain current continuity in the ionosphere in the presence of a magnetospheric electric field E with nabla x E is not equal to 0. Features which govern the formation of the double layers are: (1) the divergence of E, (2) the conductivity of the ionosphere, and (3) the current-voltage characteristics of auroral magnetic field lines. Astrophysical situations where nabla x E is not equal to 0 is applied to a conducting plasma similar to the Earth's ionosphere are potential candidates for the formation of double layers. The region with nabla x E is not equal to 0 can be generated within, or along field lines connected to, the conducting plasma. In addition to nabla x E, shear neutral flow in the conducting plasma can also form double layers

  3. Thermal behaviour of layered double hydroxides studied by emanation thermal analysis

    Czech Academy of Sciences Publication Activity Database

    Dorničák, V.; Balek, V.; Kovanda, F.; Večerníková, Eva

    90-91, - (2003), s. 475-480 ISSN 1012-0394 Institutional research plan: CEZ:AV0Z4032918 Keywords : hydrotalcite * layered double hydroxides * thermal decomposition Subject RIV: CA - Inorganic Chemistry Impact factor: 0.687, year: 2003

  4. Long-term stability of a one-dimensional current-driven double layer

    International Nuclear Information System (INIS)

    Hori, N.; Yamamoto, T.

    1988-01-01

    Long-term (>an electron transit time over the system) stability of a one-dimensional current-driven double layer is studied by numerical experiments using particles. In these experiments, the potential difference across the system is self-consistently determined by the space charge distributions inside the system. Each boundary of the system supplies a nondrifting half-Maxwellian plasma. The current density is increased by increasing the number density of the source plasma at the injection (right) boundary. A double layer can be developed by injection of a sufficiently high current density. For a fixed level of current injection, plasmas carrying no current with various densities (n/sup ts/ 0 ) are loaded on the left side of the system. Whether or not the generated double layer can maintain its potential drop for a long period depends on the density (n/sup ts/ 0 ) relative to the initial density (n/sup */ 0 ) near the injection boundary: (1) the double layer is found to grow when n/sup ts/ 0 = n/sup */ 0 ; (2) the steady double layer is seen for a long period when n/sup ts/ 0 approx. >n/sup */ 0 ; (3) the double layer is found to decay when n/sup ts/ 0 is even higher than n/sup */ 0 . A new concept of the current polarizability P/sub c/ = J/n/sup number/ is introduced for understanding these results, where J is the current density flowing through the double layer and n/sup number/ is the plasma density at the injection front, i.e., the low-potential edge of the double layer

  5. Large-amplitude ion-acoustic double layers in a plasma with warm ions

    International Nuclear Information System (INIS)

    Roychoudury, R.K.; Bhattacharyya, S.; Varshni, Y.P.

    1990-01-01

    The conditions for the existence of an ion-acoustic double layer in a plasma with warm ions and two distinct groups of hot electrons have been studied using the Sagdeev potential method. A comparison is made with the published results of Bharuthram and Shukla for cold ions and a two temperature electron population. Numerical studies have been made to find out the effect of a finite ion temperature on the Mach number of the double layers

  6. Mixing Acid Salts and Layered Double Hydroxides in Nanoscale under Solid Condition

    OpenAIRE

    Nakayama, Hirokazu; Hayashi, Aki

    2014-01-01

    The immobilization of potassium sorbate, potassium aspartate and sorbic acid in layered double hydroxide under solid condition was examined. By simply mixing two solids, immobilization of sorbate and aspartate in the interlayer space of nitrate-type layered double hydroxide, so called intercalation reaction, was achieved, and the uptakes, that is, the amount of immobilized salts and the interlayer distances of intercalation compounds were almost the same as those obtained in aqueous solution...

  7. Preparation and properties of Mg/Al layered double hydroxide-oleate and -stearate intercalation compounds

    International Nuclear Information System (INIS)

    Inomata, Kazuya; Ogawa, Makoto

    2006-01-01

    Mg/Al layered double hydroxide-oleate and -stearate intercalation compounds were successfully synthesized by the reconstruction method under hydrothermal conditions from calcined hydrotalcite. The intercalation compounds were characterized by the high structural regularity as evidenced by the sharp and intense X-ray diffraction peaks. The oleate intercalated layered double hydroxide exhibits unique physicochemical properties such as a reversible thermoresponsive change in the basal spacing and swelling in organic solvents such as n-alkanes. (author)

  8. Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

    Directory of Open Access Journals (Sweden)

    Chao-Chun Wang

    2012-01-01

    Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

  9. Ion-acoustic double layers in multi-species plasmas maintained by negative ions

    International Nuclear Information System (INIS)

    Verheest, F.

    1989-01-01

    A study is made of ion-acoustic double layers in a plasma consisting of any number of cold positive and negative ion (and cold electron) species in addition to one isothermal electron population. The Sagdeev potential is obtained in general, together with limits on both compressive and rarefactive solutions for ion-acoustic double layers and/or solitons. Weak ion-acoustic double layers are described by a modified Korteweg-de Vries equation. Such double layers are not possible in plasmas with only positive ion species and one electron population. When one or more negative ion and/or cold electron species are included above a certain threshold density, rarefactive ion-acoustic double layers occur, but no compressive ones. The double-layer form of the potential is given, together with an application to a plasma with one positive and one negative ion component. It is shown that there is indeed such a threshold density for the negative ion density, depending on the charge-to-mass ratios of both types of ions. The threshold density is determined numerically for a range of such ratios and discussed in view of possible relevance to auroral and experimental plasmas. In the discussion, cold electrons can play the role of the negative ion species. (author)

  10. Double-layer appearance after evacuation of a chronic subdural hematoma.

    Science.gov (United States)

    Sucu, Hasan Kamil; Akar, Ömer

    2014-01-01

    To investigate the reason for and the course of the double-layer appearance in the postoperative computed tomographies (CTs) of chronic subdural hematoma (CSDHs). We reviewed CSDH cases that were operated on during the last 3 years, between January 2008 and December 2010. We checked the preoperative, early postoperative, and late postoperative CTs of these patients. We investigated the relationship between the formation of a double-layer appearance and the prognoses and demographic characteristics of the patients. Our database included 119 cases. A double-layer appearance was found in the postoperative CTs of 34 cases. The mean age of double-layer cases was older (72.5 ± 12.1) than that of the remaining 85 cases (63.1 ± 17.8). We did not find any relationship between the double-layer appearance and the reoperation/recurrence/death rates. The double-layer appearance after evacuation of a CSDH might be caused by enlargement of the subarachnoid space and is not related to the presence of any residual hematoma. This appearance is not considered as a reason for reoperation.

  11. Ion acoustic waves and double-layers in electronegative expanding plasmas

    International Nuclear Information System (INIS)

    Plihon, Nicolas; Chabert, Pascal

    2011-01-01

    Ion acoustic waves and double-layers are observed in expanding plasmas in electronegative gases, i.e., plasmas containing an appreciable fraction of negative ions. The reported experiments are performed in argon gas with a variable amount of SF 6 . When varying the amount of SF 6 , the negative ion fraction increases and three main regimes were identified previously: (i) the plasma smoothly expands at low negative ion fraction, (ii) a static double-layer (associated with an abrupt potential drop and ion acceleration) forms at intermediate negative ion fraction, (iii) double-layers periodically form and propagate (in the plasma expansion direction) at high negative ion fraction. In this paper, we show that transition phases exist in between these regimes, where fluctuations are observed. These fluctuations are unstable slow ion acoustic waves, propagating in the direction opposite to the plasma expansion. These fluctuations are excited by the most unstable eigenmodes and display turbulent features. It is suggested that the static double layer forms when the ion acoustic fluctuations become non-linearly unstable: the double layer regime being a bifurcated state of the smoothly expanding regime. For the highest negative ion fraction, a coexistence of (upstream propagating) slow ion acoustic fluctuations and (downstream) propagating double layers was observed.

  12. Designing high performance precursors for atomic layer deposition of silicon oxide

    Energy Technology Data Exchange (ETDEWEB)

    Mallikarjunan, Anupama, E-mail: mallika@airproducts.com; Chandra, Haripin; Xiao, Manchao; Lei, Xinjian; Pearlstein, Ronald M.; Bowen, Heather R.; O' Neill, Mark L. [Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011 (United States); Derecskei-Kovacs, Agnes [Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, Pennsylvania 18195 (United States); Han, Bing [Air Products and Chemicals, Inc., 2 Dongsanhuan North Road, Chaoyang District, Beijing 100027 (China)

    2015-01-15

    Conformal and continuous silicon oxide films produced by atomic layer deposition (ALD) are enabling novel processing schemes and integrated device structures. The increasing drive toward lower temperature processing requires new precursors with even higher reactivity. The aminosilane family of precursors has advantages due to their reactive nature and relative ease of use. In this paper, the authors present the experimental results that reveal the uniqueness of the monoaminosilane structure [(R{sub 2}N)SiH{sub 3}] in providing ultralow temperature silicon oxide depositions. Disubstituted aminosilanes with primary amines such as in bis(t-butylamino)silane and with secondary amines such as in bis(diethylamino)silane were compared with a representative monoaminosilane: di-sec-butylaminosilane (DSBAS). DSBAS showed the highest growth per cycle in both thermal and plasma enhanced ALD. These findings show the importance of the arrangement of the precursor's organic groups in an ALD silicon oxide process.

  13. Intensifying the Casimir force between two silicon substrates within three different layers of materials

    International Nuclear Information System (INIS)

    Seyedzahedi, A.; Moradian, A.; Setare, M.R.

    2016-01-01

    We investigate the Casimir force for a system composed of two thick slabs as substrates within three different homogeneous layers. We use the scattering approach along with the Matsubara formalism in order to calculate the Casimir force at finite temperature. First, we focus on constructing the reflection matrices and then we calculate the Casimir force for a water–lipid system. According to the conventional use of silicon as a substrate, we apply the formalism to calculate the Casimir force for layers of Au, VO 2 , mica, KCl and foam rubber on the thick slabs of silicon. Afterwards, introducing an increasing factor, we compare our results with Lifshitz force in the vacuum between two semispaces of silicon in order to illustrate the influence of the layers on intensifying the Casimir force. We also calculate the Casimir force between two slabs of the forementioned materials with finite thicknesses to indicate the substrate's role in increasing the obtained Casimir force. Our simple calculation is interesting since one can extend it along with the Rigorous Coupled Wave Analysis to systems containing inhomogeneous layers as good candidates for designing nanomechanical devices.

  14. Intensifying the Casimir force between two silicon substrates within three different layers of materials

    Energy Technology Data Exchange (ETDEWEB)

    Seyedzahedi, A. [Department of Science, University of Kurdistan, Sanandaj (Iran, Islamic Republic of); Moradian, A., E-mail: a.moradian@uok.ac.ir [Department of Science, Campus of Bijar, University of Kurdistan, Bijar (Iran, Islamic Republic of); Setare, M.R., E-mail: rezakord@ipm.ir [Department of Science, University of Kurdistan, Sanandaj (Iran, Islamic Republic of)

    2016-04-01

    We investigate the Casimir force for a system composed of two thick slabs as substrates within three different homogeneous layers. We use the scattering approach along with the Matsubara formalism in order to calculate the Casimir force at finite temperature. First, we focus on constructing the reflection matrices and then we calculate the Casimir force for a water–lipid system. According to the conventional use of silicon as a substrate, we apply the formalism to calculate the Casimir force for layers of Au, VO{sub 2}, mica, KCl and foam rubber on the thick slabs of silicon. Afterwards, introducing an increasing factor, we compare our results with Lifshitz force in the vacuum between two semispaces of silicon in order to illustrate the influence of the layers on intensifying the Casimir force. We also calculate the Casimir force between two slabs of the forementioned materials with finite thicknesses to indicate the substrate's role in increasing the obtained Casimir force. Our simple calculation is interesting since one can extend it along with the Rigorous Coupled Wave Analysis to systems containing inhomogeneous layers as good candidates for designing nanomechanical devices.

  15. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

    Science.gov (United States)

    Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

    1987-01-01

    GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

  16. Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

    Science.gov (United States)

    Douglas, Anna; Muralidharan, Nitin; Carter, Rachel; Share, Keith; Pint, Cary L.

    2016-03-01

    Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics. Electronic supplementary information (ESI) available: (i) Experimental details for ALD and material fabrication, ellipsometry film thickness, preparation of gel electrolyte and separator, details for electrochemical measurements, HRTEM image of VOx coated porous silicon, Raman spectroscopy for VOx as-deposited as well as annealed in air for 1 hour at 450 °C, SEM and transient behavior dissolution tests of uniformly coated VOx on

  17. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe; Andrä, Gudrun [Leibniz-Institut für Photonische Technologien, PF 100239, 07702 Jena (Germany); Himmerlich, Marcel; Krischok, Stefan [Institut für Mikro-und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau (Germany)

    2016-01-28

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  18. Cyclotron resonance study of the two-dimensional electron layers and double layers in tilted magnetic fields

    Czech Academy of Sciences Publication Activity Database

    Goncharuk, Natalya; Smrčka, Ludvík; Kučera, Jan

    2004-01-01

    Roč. 22, - (2004), s. 590-593 ISSN 1386-9477. [International Conference on Electronic Properties of Two-Dimensional Systems /15./. Nara, 14.07.2003-18.07.2003] R&D Projects: GA ČR GA202/01/0754 Institutional research plan: CEZ:AV0Z1010914 Keywords : single layer * double layer * two-dimensional electron system * cyclotron resonance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.898, year: 2004

  19. Study on dynamic deformation synchronized measurement technology of double-layer liquid surfaces

    Science.gov (United States)

    Tang, Huiying; Dong, Huimin; Liu, Zhanwei

    2017-11-01

    Accurate measurement of the dynamic deformation of double-layer liquid surfaces plays an important role in many fields, such as fluid mechanics, biomechanics, petrochemical industry and aerospace engineering. It is difficult to measure dynamic deformation of double-layer liquid surfaces synchronously for traditional methods. In this paper, a novel and effective method for full-field static and dynamic deformation measurement of double-layer liquid surfaces has been developed, that is wavefront distortion of double-wavelength transmission light with geometric phase analysis (GPA) method. Double wavelength lattice patterns used here are produced by two techniques, one is by double wavelength laser, and the other is by liquid crystal display (LCD). The techniques combine the characteristics such as high transparency, low reflectivity and fluidity of liquid. Two color lattice patterns produced by laser and LCD were adjusted at a certain angle through the tested double-layer liquid surfaces simultaneously. On the basis of the refractive indexes difference of two transmitted lights, the double-layer liquid surfaces were decoupled with GPA method. Combined with the derived relationship between phase variation of transmission-lattice patterns and out-of plane heights of two surfaces, as well as considering the height curves of the liquid level, the double-layer liquid surfaces can be reconstructed successfully. Compared with the traditional measurement method, the developed method not only has the common advantages of the optical measurement methods, such as high-precision, full-field and non-contact, but also simple, low cost and easy to set up.

  20. Improvement in photovoltaic properties of silicon solar cells with a doped porous silicon layer with rare earth (Ce, La) as antireflection coatings

    International Nuclear Information System (INIS)

    Atyaoui, Malek; Dimassi, Wissem; Atyaoui, Atef; Elyagoubi, Jalel; Ouertani, Rachid; Ezzaouia, Hatem

    2013-01-01

    The performance improvement of solar cells due to the formation of a porous silicon layer treated with rare earth (Ce, La) in the n + emitter of silicon n + /p junctions has been investigated. The photovoltaic properties of the cells with and without treatment of the porous silicon layer are compared. From the reflection measurements, it was shown that the cells with treated PS layers have lower reflectivity value compared to cell with untreated PS layer. The main result is that the photovoltaic energy conversion efficiency of solar cells can be enhanced by using the treated porous silicon layers with the rare earth (Ce, La) as anti-reflection coatings. -- Highlights: • The reduction of optical loss in silicon (c-Si) solar cells attracts the attention of many researches to achieve high efficiencies. • To attain this aim, the treated PS layers with rare earth (La, Ce) are suggested to be used as an (ARC) of c-Si solar cell. • The result showed a decrease in the optical losses which can explain the improved photovoltaic properties

  1. Improvement in photovoltaic properties of silicon solar cells with a doped porous silicon layer with rare earth (Ce, La) as antireflection coatings

    Energy Technology Data Exchange (ETDEWEB)

    Atyaoui, Malek, E-mail: atyaoui.malek@yahoo.fr [Laboratoire de Photovoltaïque, Centre de recherches et des technologies de l' energie, technopole de Borj-Cédria, PB:95, Hammam Lif 2050 (Tunisia); Dimassi, Wissem [Laboratoire de Photovoltaïque, Centre de recherches et des technologies de l' energie, technopole de Borj-Cédria, PB:95,Hammam Lif 2050 (Tunisia); Atyaoui, Atef [Laboratoire de traitement des eaux usées, Centre de recherches et des technologies des eaux, technopole de Borj-Cédria, PB: 273, Soliman 8020 (Tunisia); Elyagoubi, Jalel; Ouertani, Rachid; Ezzaouia, Hatem [Laboratoire de Photovoltaïque, Centre de recherches et des technologies de l' energie, technopole de Borj-Cédria, PB:95,Hammam Lif 2050 (Tunisia)

    2013-09-15

    The performance improvement of solar cells due to the formation of a porous silicon layer treated with rare earth (Ce, La) in the n{sup +} emitter of silicon n{sup +}/p junctions has been investigated. The photovoltaic properties of the cells with and without treatment of the porous silicon layer are compared. From the reflection measurements, it was shown that the cells with treated PS layers have lower reflectivity value compared to cell with untreated PS layer. The main result is that the photovoltaic energy conversion efficiency of solar cells can be enhanced by using the treated porous silicon layers with the rare earth (Ce, La) as anti-reflection coatings. -- Highlights: • The reduction of optical loss in silicon (c-Si) solar cells attracts the attention of many researches to achieve high efficiencies. • To attain this aim, the treated PS layers with rare earth (La, Ce) are suggested to be used as an (ARC) of c-Si solar cell. • The result showed a decrease in the optical losses which can explain the improved photovoltaic properties.

  2. Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control

    Energy Technology Data Exchange (ETDEWEB)

    Ranjan, Alok, E-mail: alok.ranjan@us.tel.com; Wang, Mingmei; Sherpa, Sonam D.; Rastogi, Vinayak [TEL Technology Center, America LLC, 255 Fuller Road, Suite 214, Albany, New York 12203 (United States); Koshiishi, Akira [Tokyo Electron Miyagi, Ltd., 1 Techno-Hills, Taiwa-cho, Kurokawa-gun, Miyagi, 9813629 (Japan); Ventzek, Peter L. G. [Tokyo Electron America, Inc., 2400 Grove Blvd., Austin, Texas 78741 (United States)

    2016-05-15

    Atomic or layer by layer etching of silicon exploits temporally segregated self-limiting adsorption and material removal steps to mitigate the problems associated with continuous or quasicontinuous (pulsed) plasma processes: selectivity loss, damage, and profile control. Successful implementation of atomic layer etching requires careful choice of the plasma parameters for adsorption and desorption steps. This paper illustrates how process parameters can be arrived at through basic scaling exercises, modeling and simulation, and fundamental experimental tests of their predictions. Using chlorine and argon plasma in a radial line slot antenna plasma source as a platform, the authors illustrate how cycle time, ion energy, and radical to ion ratio can be manipulated to manage the deviation from ideality when cycle times are shortened or purges are incomplete. Cell based Monte Carlo feature scale modeling is used to illustrate profile outcomes. Experimental results of atomic layer etching processes are illustrated on silicon line and space structures such that iso-dense bias and aspect ratio dependent free profiles are produced. Experimental results also illustrate the profile control margin as processes move from atomic layer to multilayer by layer etching. The consequence of not controlling contamination (e.g., oxygen) is shown to result in deposition and roughness generation.

  3. Development of ion-acoustic double layers through ion-acoustic fluctuations

    International Nuclear Information System (INIS)

    Sekar, A.N.; Saxena, Y.C.

    1985-01-01

    Experimental results on the formation of ion acoustic double layers resembling asymmetric ion-holes are presented. In a double plasma device, modified suitably to inject electron beam into the target plasma, modulation of the beam through step potential leads to excitation of ion-acoustic fluctuation. The ion-acoustic fluctuation, growing away from the grids separating source and target plasmas, developed into weak asymmetric ion-acoustic double layer. The observations are in qualitative agreement with theoretical models and computer simulations. (author)

  4. HOLE-BLOCKING LAYERS FOR SILICON/ORGANIC HETEROJUNCTIONS: A NEW CLASS OF HIGH-EFFICIENCY LOW-COST PV

    Energy Technology Data Exchange (ETDEWEB)

    Sturm, James [Princeton Univ., NJ (United States)

    2017-12-04

    This project is the first investigation of the use of thin titanium dioxide layers on silicon as a hole-blocking / electron-transparent selective contact to silicon. The work was motivated by the goal of a high-efficiency low-cost silicon-based solar cells that could be processed entirely at low temperature (300 Degree Celsius) or less, without requiring plasma-processing.

  5. Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

    International Nuclear Information System (INIS)

    Munoz, D.; Voz, C.; Blanque, S.; Ibarz, D.; Bertomeu, J.; Alcubilla, R.

    2009-01-01

    In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρ c ∼ 10 mΩ cm 2 ) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

  6. Mg/Al Ordering in Layered Double Hydroxides Revealed by Multinuclear NMR Spectroscopy

    DEFF Research Database (Denmark)

    Nielsen, Ulla Gro; Grey, Clare P.; Sideris, Paul J.

    2008-01-01

    The anion- exchange ability of layered double hydroxides ( LDHs) has been exploited to create materials for use in catalysis, drug delivery, and environmental remediation. The specific cation arrangements in the hydroxide layers of hydrotalcite- like LDHs, of general formula Mg1-x2+Alx3+OH2(Anion...

  7. Analytical and Numerical Modeling of Tsunami Wave Propagation for double layer state in Bore

    Science.gov (United States)

    Yuvaraj, V.; Rajasekaran, S.; Nagarajan, D.

    2018-04-01

    Tsunami wave enters into the river bore in the landslide. Tsunami wave propagation are described in two-layer states. The velocity and amplitude of the tsunami wave propagation are calculated using the double layer. The numerical and analytical solutions are given for the nonlinear equation of motion of the wave propagation in a bore.

  8. Porous layered double hydroxides synthesized using oxygen generated by decomposition of hydrogen peroxide

    NARCIS (Netherlands)

    Gonzalez Rodriguez, P.; de Ruiter, M.P.; Wijnands, Tom; ten Elshof, Johan E.

    2017-01-01

    Porous magnesium-aluminium layered double hydroxides (LDH) were prepared through intercalation and decomposition of hydrogen peroxide (H2O2). This process generates oxygen gas nano-bubbles that pierce holes in the layered structure of the material by local pressure build-up. The decomposition of the

  9. Preparation of YBCO on YSZ layers deposited on silicon and sapphire by MOCVD: influence of the intermediate layer on the quality of the superconducting film

    International Nuclear Information System (INIS)

    Garcia, G.; Casado, J.; Llibre, J.; Doudkowski, M.; Santiso, J.; Figueras, A.; Schamm, S.; Dorignac, D.; Grigis, C.; Aguilo, M.

    1995-01-01

    YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO 2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an in-plane texture defined by the following relationships: (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers. (orig.)

  10. Fracture Characteristics Analysis of Double-layer Rock Plates with Both Ends Fixed Condition

    Directory of Open Access Journals (Sweden)

    S. R. Wang

    2014-07-01

    Full Text Available In order to research on the fracture and instability characteristics of double-layer rock plates with both ends fixed, the three-dimension computational model of double-layer rock plates under the concentrated load was built by using PFC3D technique (three-dimension particle flow code, and the mechanical parameters of the numerical model were determined based on the physical model tests. The results showed the instability process of the double-layer rock plates had four mechanical response phases: the elastic deformation stage, the brittle fracture of upper thick plate arching stage, two rock-arch bearing stage and two rock-arch failure stage; moreover, with the rock plate particle radius from small to large change, the maximum vertical force of double rock-arch appeared when the particle size was a certain value. The maximum vertical force showed an upward trend with the increase of the rock plate temperature, and in the case of the same thickness the maximum vertical force increased with the increase of the upper rock plate thickness. When the boundary conditions of double-layer rock plates changed from the hinged support to the fixed support, the maximum horizontal force observably decreased, and the maximum vertical force showed small fluctuations and then tended towards stability with the increase of cohesive strength of double-layer rock plates.

  11. The thermodynamic spin magnetization of strongly correlated 2d electrons in a silicon inversion layer

    OpenAIRE

    Prus, O.; Yaish, Y.; Reznikov, M.; Sivan, U.; Pudalov, V.

    2002-01-01

    A novel method invented to measure the minute thermodynamic spin magnetization of dilute two dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances the low temperature susceptibility up to 7.5 folds compared with the Pauli susceptibility of non-interacting electrons. The magnetization peaks in the vicinity of the density where transition to strong localization takes place. At the same density, the suscep...

  12. Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.

    Science.gov (United States)

    Riemensberger, Johann; Hartinger, Klaus; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

    2012-12-03

    We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

  13. Ab initio density functional theory investigation of structural and electronic properties of double-walled silicon carbide nanotubes

    Science.gov (United States)

    Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

    2009-12-01

    By using ab initio density functional theory, the structural and electronic properties of (n,n)@(11,11) double-walled silicon carbide nanotubes (SiCNTs) are investigated. Our calculations reveal the existence of an energetically favorable double-walled nanotube whose interwall distance is about 4.3 Å. Interwall spacing and curvature difference are found to be essential for the electronic states around the Fermi level.

  14. Mesoscopic Oxide Double Layer as Electron Specific Contact for Highly Efficient and UV Stable Perovskite Photovoltaics.

    Science.gov (United States)

    Tavakoli, Mohammad Mahdi; Giordano, Fabrizio; Zakeeruddin, Shaik Mohammed; Grätzel, Michael

    2018-04-11

    The solar to electric power conversion efficiency (PCE) of perovskite solar cells (PSCs) has recently reached 22.7%, exceeding that of competing thin film photovoltaics and the market leader polycrystalline silicon. Further augmentation of the PCE toward the Shockley-Queisser limit of 33.5% warrants suppression of radiationless carrier recombination by judicious engineering of the interface between the light harvesting perovskite and the charge carrier extraction layers. Here, we introduce a mesoscopic oxide double layer as electron selective contact consisting of a scaffold of TiO 2 nanoparticles covered by a thin film of SnO 2 , either in amorphous (a-SnO 2 ), crystalline (c-SnO 2 ), or nanocrystalline (quantum dot) form (SnO 2 -NC). We find that the band gap of a-SnO 2 is larger than that of the crystalline (tetragonal) polymorph leading to a corresponding lift in its conduction band edge energy which aligns it perfectly with the conduction band edge of both the triple cation perovskite and the TiO 2 scaffold. This enables very fast electron extraction from the light perovskite, suppressing the notorious hysteresis in the current-voltage ( J-V) curves and retarding nonradiative charge carrier recombination. As a result, we gain a remarkable 170 mV in open circuit photovoltage ( V oc ) by replacing the crystalline SnO 2 by an amorphous phase. Because of the quantum size effect, the band gap of our SnO 2 -NC particles is larger than that of bulk SnO 2 causing their conduction band edge to shift also to a higher energy thereby increasing the V oc . However, for SnO 2 -NC there remains a barrier for electron injection into the TiO 2 scaffold decreasing the fill factor of the device and lowering the PCE. Introducing the a-SnO 2 coated mp-TiO 2 scaffold as electron extraction layer not only increases the V oc and PEC of the solar cells but also render them resistant to UV light which forebodes well for outdoor deployment of these new PSC architectures.

  15. The kinetics of solid phase epitaxy in As-doped buried amorphous silicon layers

    International Nuclear Information System (INIS)

    McCallum, J.C.

    1999-01-01

    Ion implantation is the principal method used to introduce dopants into silicon for fabrication of semiconductor devices. During ion implantation, damage accumulates in the crystalline silicon lattice and amorphisation may occur over the depth range of the ions if the implant dose is sufficiently high. As device dimensions shrink, the need to produce shallower and shallower highly-doped layers increases and the probability of amorphisation also increases. To achieve dopant-activation, the amorphous or damaged material must be returned to the crystalline state by thermal annealing. Amorphous silicon layers can be crystallised by the solid-state process of solid phase epitaxy (SPE) in which the amorphous layer transforms to crystalline silicon (c-Si) layer by layer using the underlying c-Si as a seed. The atomic mechanism that is responsible for the crystallisation is thought to involve highly-localised bond-breaking and rearrangement processes at the amorphous/crystalline (a/c) interface but the defect responsible for these bond rearrangements has not yet been identified. Since the bond breaking process necessarily generates dangling bonds, it has been suggested that the crystallisation process may solely involve the formation and migration of dangling bonds at the interface. One of the key factors which may shed further light on the nature of the SPE defect is the observed dopant-dependence of the rate of crystallisation. It has been found that moderate concentrations of dopants enhance the SPE crystallisation rate while the presence of equal concentrations of an n-type and a p-type dopant (impurity compensation) returns the SPE rate to the intrinsic value. This provides crucial evidence that the SPE mechanism is sensitive to the position of the Fermi level in the bandgap of the crystalline and/or the amorphous silicon phases and may lead to identification of an energy level within the bandgap that can be associated with the defect. This paper gives details of SPE

  16. Read/write performance of perpendicular double-layered cylindrical media

    International Nuclear Information System (INIS)

    Yamada, H.; Shimatsu, T.; Watanabe, I.; Tsuchiyama, R.; Aoi, H.; Muraoka, H.; Nakamura, Y.

    2005-01-01

    A cylindrical magnetic storage system using perpendicular double-layered media has been developed. CoCrTa/CoZrNb deposited on a rotating cylindrical substrate shows perpendicular anisotropy and magnetic properties, which have almost the same characteristics as conventional disk-media. The fundamental read/write characteristics of perpendicular double-layered cylindrical media were measured using a single-pole-type (SPT) writer with a sliding-contact-type slider and a merged giant magneto-resistive (GMR) reader with a one-pad-type slider designed for use with cylindrical media. Preliminary studies for improving the characteristics of the recording layer are also described

  17. Improved Electrochemical Cycling Durability in a Nickel Oxide Double-Layered Film.

    Science.gov (United States)

    Hou, Shuai; Zhang, Xiang; Tian, Yanlong; Zhao, Jiupeng; Geng, Hongbin; Qu, Huiying; Zhang, Hangchuan; Zhang, Kun; Wang, Binsheng; Gavrilyuk, Alexander; Li, Yao

    2017-11-16

    For the first time, a crystalline-amorphous double-layered NiO x film has been prepared by reactive radio frequency magnetron sputtering. This film has exhibited improved electrochemical cycling durability, whereas other electrochromic parameters have been maintained at the required level, namely, a short coloration/bleaching time (0.8 s/1.1 s) and an enhanced transmittance modulation range (62.2 %) at λ=550 nm. Additionally, the double-layered film has shown better reversibility than that of amorphous and crystalline single-layered films. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Arrangements of a pair of loudspeakers for sound field control with double-layer arrays

    DEFF Research Database (Denmark)

    Chang, Jiho; Agerkvist, Finn T.; Olsen, Martin

    2013-01-01

    Recent studies have attempted to control sound fields, and also to reduce room reflections with a circular or spherical array of loudspeakers. One of the attempts was to suppress sound waves propagating to the walls outside the array with a circular double-layer array of loudspeakers. The double-layer...... array represents a set of a monopole and a dipole in the Kirchhoff-Helmholtz integral equation, and thus the distance between these layers should be short compared with the wavelength. In practice, however, this condition is occasionally hard to satisfy because of the sizes of loudspeaker cabinets...

  19. Increasing the radiation resistance of single-crystal silicon epitaxial layers

    Directory of Open Access Journals (Sweden)

    Kurmashev Sh. D.

    2014-12-01

    Full Text Available The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before the epitaxial layer is applied on the front surface of the silicon substrate by its preliminary oxidation and subsequent etching of the oxide layer. The substrates were silicon wafers KEF-4.5 and KDB-10 with a diameter of about 40 mm, grown by the Czochralski method. Irradiation of the samples was carried out using electron linear accelerator "Electronics" (ЭЛУ-4. Energy of the particles was 2,3—3,0 MeV, radiation dose 1015—1020 m–2, electron beam current 2 mA/m2. It is shown that in structures containing dislocation networks, irradiation results in reduction of the reverse currents by 5—8 times and of the density of defects by 5—10 times, while the mobility of the charge carriers is increased by 1,2 times. Wafer yield for operation under radiation exposure, when the semiconductor structures are formed in the optimal mode, is increased by 7—10% compared to the structures without dislocation networks. The results obtained can be used in manufacturing technology for radiation-resistant integrated circuits (bipolar, CMOS, BiCMOS, etc..

  20. Modification of inkjet printer for polymer sensitive layer preparation on silicon-based gas sensors

    Directory of Open Access Journals (Sweden)

    Tianjian Li

    2015-04-01

    Full Text Available Inkjet printing is a versatile, low cost deposition technology with the capabilities for the localized deposition of high precision, patterned deposition in a programmable way, and the parallel deposition of a variety of materials. This paper demonstrates a new method of modifying the consumer inkjet printer to prepare polymer-sensitive layers on silicon wafer for gas sensor applications. A special printing tray for the modified inkjet printer to support a 4-inch silicon wafer is designed. The positioning accuracy of the deposition system is tested, based on the newly modified printer. The experimental data show that the positioning errors in the horizontal direction are negligibly small, while the positioning errors in the vertical direction rise with the increase of the printing distance of the wafer. The method for making suitable ink to be deposited to form the polymer-sensitive layer is also discussed. In the testing, a solution of 0.1 wt% polyvinyl alcohol (PVA was used as ink to prepare a sensitive layer with certain dimensions at a specific location on the surface of the silicon wafer, and the results prove the feasibility of the methods presented in this article.

  1. Accelerating action of stresses on crystallization kinetics in silicon ion-implanted layers during pulsed heating

    International Nuclear Information System (INIS)

    Aleksandrov, L.N.

    1985-01-01

    Numerical simulation of the effect of stressed in ion-implanted layers on kinetics of amorphous phase transformations is performed. The suggested model of accounting stresses including concentration ones is based on the locality of action of interstitial addition atoms and on general structural inhomogeneity of amorphous semiconductor leading to the formation of areas of the facilitated phase transition. Accounting of effect of energy variation of silicon atoms interaction on probability of displacement events and atoms building in lattice points or atomic bonds disintegration allows one to trace the accelerating action of introduced by ion implantation stresses on the kinetics of layer crystallization during pulsed heating

  2. High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

    Science.gov (United States)

    Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

    2018-02-01

    In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

  3. The kinetics of dewetting ultra-thin Si layers from silicon dioxide

    International Nuclear Information System (INIS)

    Aouassa, M; Favre, L; Ronda, A; Berbezier, I; Maaref, H

    2012-01-01

    In this study, we investigate the kinetically driven dewetting of ultra-thin silicon films on silicon oxide substrate under ultra-high vacuum, at temperatures where oxide desorption and silicon lost could be ruled out. We show that in ultra-clean experimental conditions, the three different regimes of dewetting, namely (i) nucleation of holes, (ii) film retraction and (iii) coalescence of holes, can be quantitatively measured as a function of temperature, time and thickness. For a nominal flat clean sample these three regimes co-exist during the film retraction until complete dewetting. To discriminate their roles in the kinetics of dewetting, we have compared the dewetting evolution of flat unpatterned crystalline silicon layers (homogeneous dewetting), patterned crystalline silicon layers (heterogeneous dewetting) and amorphous silicon layers (crystallization-induced dewetting). The first regime (nucleation) is described by a breaking time which follows an exponential evolution with temperature with an activation energy E H ∼ 3.2 eV. The second regime (retraction) is controlled by surface diffusion of matter from the edges of the holes. It involves a very fast redistribution of matter onto the flat Si layer, which prevents the formation of a rim on the edges of the holes during both heterogeneous and homogeneous dewetting. The time evolution of the linear dewetting front measured during heterogeneous dewetting follows a characteristic power law x ∼ t 0.45 consistent with a surface diffusion-limited mechanism. It also evolves as x ∼ h -1 as expected from mass conservation in the absence of thickened rim. When the surface energy is isotropic (during dewetting of amorphous Si) the dynamics of dewetting is considerably modified: firstly, there is no measurable breaking time; secondly, the speed of dewetting is two orders of magnitude larger than for crystalline Si; and thirdly, the activation energy of dewetting is much smaller due to the different driving

  4. Steady-state solution growth of microcrystalline silicon on nanocrystalline seed layers on glass

    Science.gov (United States)

    Bansen, R.; Ehlers, C.; Teubner, Th.; Boeck, T.

    2016-09-01

    The growth of polycrystalline silicon layers on glass from tin solutions at low temperatures is presented. This approach is based on the steady-state solution growth of Si crystallites on nanocrystalline seed layers, which are prepared in a preceding process step. Scanning electron microscopy and atomic force microscopy investigations reveal details about the seed layer surfaces, which consist of small hillocks, as well as about Sn inclusions and gaps along the glass substrate after solution growth. The successful growth of continuous microcrystalline Si layers with grain sizes up to several ten micrometers shows the feasibility of the process and makes it interesting for photovoltaics. Project supported by the German Research Foundation (DFG) (No. BO 1129/5-1).

  5. Formation and Characterization of Stacked Nanoscale Layers of Polymers and Silanes on Silicon Surfaces

    Science.gov (United States)

    Ochoa, Rosie; Davis, Brian; Conley, Hiram; Hurd, Katie; Linford, Matthew R.; Davis, Robert C.

    2008-10-01

    Chemical surface patterning at the nanoscale is a critical component of chemically directed assembly of nanoscale devices or sensitive biological molecules onto surfaces. Complete and consistent formation of nanoscale layers of silanes and polymers is a necessary first step for chemical patterning. We explored methods of silanizing silicon substrates for the purpose of functionalizing the surfaces. The chemical functionalization, stability, flatness, and repeatability of the process was characterized by use of ellipsometry, water contact angle, and Atomic Force Microscopy (AFM). We found that forming the highest quality functionalized surfaces was accomplished through use of chemical vapor deposition (CVD). Specifically, surfaces were plasma cleaned and hydrolyzed before the silane was applied. A polymer layer less then 2 nm in thickness was electrostatically bound to the silane layer. The chemical functionalization, stability, flatness, and repeatability of the process was also characterized for the polymer layer using ellipsometry, water contact angle, and AFM.

  6. Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Imura, T; Hiraki, A; Okamoto, H

    1982-01-01

    Auger electron spectroscopy with the ion sputter-etching technique and secondary ion mass spectroscopy have been utilized to investigate the depth distribution of Sn and In electrode elements in amorphous silicon layers of the photovoltaic device. The comparison of the depth profiles with the cell performances has indicated that the presence of the reduced state of In in both the p and i-layers affects the solar cell performance, but that of Sn does not. It was also shown that layered structure of In-Sn oxide (ITO)/SnO2 effectively prevents the diffusion of In and achieves high cell performances, having the thickness of the SnO2 layer about 200 A. 8 references.

  7. Direct measurements of the velocity and thickness of ''explosively'' propagating buried molten layers in amorphous silicon

    International Nuclear Information System (INIS)

    Lowndes, D.H.; Jellison, G.E. Jr.; Pennycook, S.J.; Withrow, S.P.; Mashburn, D.N.

    1986-01-01

    Simultaneous infrared (1152 nm) and visible (633 nm) reflectivity measurements with nanosecond resolution were used to study the initial formation and subsequent motion of pulsed KrF laser-induced ''explosively'' propagating buried molten layers in ion implantation-amorphized silicon. The buried layer velocity decreases with depth below the surface, but increases with KrF laser energy density; a maximum velocity of about 14 m/s was observed, implying an undercooling-velocity relationship of approx. 14 K/(m/s). Z-contrast scanning transmission electron microscopy was used to form a direct chemical image of implanted Cu ions transported by the buried layer and showed that the final buried layer thickness was <15 nm

  8. XPS studies of SiO2 surface layers formed by oxygen ion implantation into silicon

    International Nuclear Information System (INIS)

    Schulze, D.; Finster, J.

    1983-01-01

    SiO 2 surface layers of 160 nm thickness formed by 16 O + ion implantation into silicon are examined by X-ray photoelectron spectroscopy measurements into the depth after a step-by-step chemical etching. The chemical nature and the thickness of the transition layer were determined. The results of the XPS measurements show that the outer surface and the bulk of the layers formed by oxygen implantation and subsequent high temperature annealing consist of SiO 2 . There is no evidence for Si or SiO/sub x/ (0 2 and Si is similar to that of thin grown oxide layers. Only its thickness is somewhat larger than in thermal oxide

  9. Maglev performance of a double-layer bulk high temperature superconductor above a permanent magnet guideway

    International Nuclear Information System (INIS)

    Deng, Z; Wang, J; Zheng, J; Lin, Q; Zhang, Y; Wang, S

    2009-01-01

    In order to improve the performance of the present high temperature superconducting (HTS) maglev vehicle system, the maglev performance of single- and double-layer bulk high temperature superconductors (HTSC) was investigated above a permanent magnet guideway (PMG). It is found that the maglev performance of a double-layer bulk HTSC is not a simple addition of each layer's levitation and guidance force. Moreover, the applied magnetic field at the position of the upper layer bulk HTSC is not completely shielded by the lower layer bulk HTSC either. 53.5% of the levitation force and 27.5% of the guidance force of the upper layer bulk HTSC are excited in the double-layer bulk HTSC arrangement in the applied field-cooling condition and working gap, bringing a corresponding improvement of 16.9% and 8.8% to the conventional single-layer bulk HTSC. The present research implies that the cost performance of upper layer bulk HTSC is a little low for the whole HTS maglev system.

  10. Maglev performance of a double-layer bulk high temperature superconductor above a permanent magnet guideway

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Z; Wang, J; Zheng, J; Lin, Q; Zhang, Y; Wang, S [Applied Superconductivity Laboratory, Southwest Jiaotong University, Chengdu, 610031 (China)], E-mail: asclab@asclab.cn

    2009-05-15

    In order to improve the performance of the present high temperature superconducting (HTS) maglev vehicle system, the maglev performance of single- and double-layer bulk high temperature superconductors (HTSC) was investigated above a permanent magnet guideway (PMG). It is found that the maglev performance of a double-layer bulk HTSC is not a simple addition of each layer's levitation and guidance force. Moreover, the applied magnetic field at the position of the upper layer bulk HTSC is not completely shielded by the lower layer bulk HTSC either. 53.5% of the levitation force and 27.5% of the guidance force of the upper layer bulk HTSC are excited in the double-layer bulk HTSC arrangement in the applied field-cooling condition and working gap, bringing a corresponding improvement of 16.9% and 8.8% to the conventional single-layer bulk HTSC. The present research implies that the cost performance of upper layer bulk HTSC is a little low for the whole HTS maglev system.

  11. Interaction of pristine hydrotalcite-like layered double hydroxides ...

    Indian Academy of Sciences (India)

    1783–1790. c Indian Academy of Sciences. ... adversely impacts the ability of the metal hydroxide layer to interact with CO2 in the gas ... CO2 is a greenhouse gas and the bulk of anthropogenic CO2 ... decomposes by the release of gaseous CO2 and water in ... systems such as [Co–Al] LDH the decomposition tempera-.

  12. One-dimensional magnetophotonic crystals with magnetooptical double layers

    International Nuclear Information System (INIS)

    Berzhansky, V. N.; Shaposhnikov, A. N.; Prokopov, A. R.; Karavainikov, A. V.; Mikhailova, T. V.; Lukienko, I. N.; Kharchenko, Yu. N.; Golub, V. O.; Salyuk, O. Yu.; Belotelov, V. I.

    2016-01-01

    One-dimensional magnetophotonic microcavity crystals with nongarnet dielectric mirrors are created and investigated. The defect layers in the magnetophotonic crystals are represented by two bismuth-substituted yttrium iron garnet Bi:YIG layers with various bismuth contents in order to achieve a high magnetooptical response of the crystals. The parameters of the magnetophotonic crystal layers are optimized by numerical solution of the Maxwell equations by the transfer matrix method to achieve high values of Faraday rotation angle Θ F and magnetooptical Q factor. The calculated and experimental data agree well with each other. The maximum values of Θ F =–20.6°, Q = 8.1° at a gain t = 16 are obtained for magnetophotonic crystals with m = 7 pairs of layers in Bragg mirrors, and the parameters obtained for crystals with m = 4 and t = 8.5 are Θ F =–12.5° and Q = 14.3°. It is shown that, together with all-garnet and multimicrocavities magnetophotonic crystals, such structures have high magnetooptical characteristics.

  13. One-dimensional magnetophotonic crystals with magnetooptical double layers

    Energy Technology Data Exchange (ETDEWEB)

    Berzhansky, V. N., E-mail: v.n.berzhansky@gmail.com; Shaposhnikov, A. N.; Prokopov, A. R.; Karavainikov, A. V.; Mikhailova, T. V. [V.I. Vernadsky Crimean Federal University (Russian Federation); Lukienko, I. N.; Kharchenko, Yu. N., E-mail: kharcenko@ilt.kharkov.ua [National Academy of Sciences of Ukraine, Verkin Institute for Low Temperature Physics and Engineering (Ukraine); Golub, V. O., E-mail: v-o-golub@yahoo.com; Salyuk, O. Yu. [National Academy of Sciences of Ukraine, Institute of Magnetism (Ukraine); Belotelov, V. I., E-mail: belotelov@physics.msu.ru [Russian Quantum Center (Russian Federation)

    2016-11-15

    One-dimensional magnetophotonic microcavity crystals with nongarnet dielectric mirrors are created and investigated. The defect layers in the magnetophotonic crystals are represented by two bismuth-substituted yttrium iron garnet Bi:YIG layers with various bismuth contents in order to achieve a high magnetooptical response of the crystals. The parameters of the magnetophotonic crystal layers are optimized by numerical solution of the Maxwell equations by the transfer matrix method to achieve high values of Faraday rotation angle Θ{sub F} and magnetooptical Q factor. The calculated and experimental data agree well with each other. The maximum values of Θ{sub F} =–20.6°, Q = 8.1° at a gain t = 16 are obtained for magnetophotonic crystals with m = 7 pairs of layers in Bragg mirrors, and the parameters obtained for crystals with m = 4 and t = 8.5 are Θ{sub F} =–12.5° and Q = 14.3°. It is shown that, together with all-garnet and multimicrocavities magnetophotonic crystals, such structures have high magnetooptical characteristics.

  14. Improved Reliability of Small Molecule Organic Solar Cells by Double Anode Buffer Layers

    Directory of Open Access Journals (Sweden)

    Pao-Hsun Huang

    2014-01-01

    Full Text Available An optimized hybrid planar heterojunction (PHJ of small molecule organic solar cells (SM-OSCs based on copper phthalocyanine (CuPc as donor and fullerene (C60 as acceptor was fabricated, which obviously enhanced the performance of device by sequentially using both MoO3 and pentacene as double anode buffer layers (ABL, also known as hole extraction layer (HEL. A series of the vacuum-deposited ABL, acting as an electron and exciton blocking layer, were examined for their characteristics in SM-OSCs. The performance and reliability were compared between conventional ITO/ABL/CuPc/C60/BCP/Ag cells and the new ITO/double ABL/CuPc/C60/BCP/Ag cells. The effect on the electrical properties of these materials was also investigated to obtain the optimal thickness of ABL. The comparison shows that the modified cell has an enhanced reliability compared to traditional cells. The improvement of lifetime was attributed to the idea of double layers to prevent humidity and oxygen from diffusing into the active layer. We demonstrated that the interfacial extraction layers are necessary to avoid degradation of device. That is to say, in normal temperature and pressure, a new avenue for the device within double buffer layers has exhibited the highest values of open circuit voltage (Voc, fill factor (FF, and lifetime in this work compared to monolayer of ABL.

  15. Double layer mixed matrix membrane adsorbers improving capacity and safety hemodialysis

    Science.gov (United States)

    Saiful; Borneman, Z.; Wessling, M.

    2018-05-01

    Double layer mixed matrix membranes adsorbers have been developed for blood toxin removal by embedding activated carbon into cellulose acetate macroporous membranes. The membranes are prepared by phase inversion method via water vapor induced phase separation followed by an immersion precipitation step. Double layer MMM consisting of an active support and a separating layer. The active support layer consists of activated carbon particles embedded in macroporous cellulose acetate; the separating layer consists of particle free cellulose acetate. The double layer membrane possess an open and interconnected macroporous structure with a high loading of activated carbon available for blood toxins removal. The MMM AC has a swelling degree of 6.5 %, porosity of 53 % and clean water flux of 800 Lm-2h-1bar-1. The prepared membranes show a high dynamic Creatinine (Crt) removal during hemodilysis process. The Crt removal by adsorption contributes to amore than 83 % of the total removal. The double layer adsorptive membrane proves hemodialysis membrane can integrated with adsorption, in which blood toxins are removed in one step.

  16. Study of inter-strip gap effects and efficiency for full energy detection of double sided silicon strip detectors

    International Nuclear Information System (INIS)

    Fisichella, M.; Forneris, J.; Grassi, L.

    2015-01-01

    We performed a characterization of Double Sided Silicon Strip Detectors (DSSSD) with the aim to carry out a systematic study of the inter-strip effects on the energy measurement of charged particles. The dependence of the DSSSD response on ion, energy and applied bias has been investigated. (author)

  17. High power laser interaction with single and double layer targets

    Czech Academy of Sciences Publication Activity Database

    Borodziuk, S.; Demchenko, N. N.; Gus'kov, S. Yu.; Jungwirth, Karel; Kálal, M.; Kasperczuk, A.; Kondrashov, V. N.; Králiková, Božena; Krouský, Eduard; Limpouch, Jiří; Mašek, Karel; Pisarczyk, P.; Pisarczyk, T.; Pfeifer, Miroslav; Rohlena, Karel; Rozanov, V. B.; Skála, Jiří; Ullschmied, Jiří

    2005-01-01

    Roč. 35, č. 2 (2005), s. 241-262 ISSN 0078-5466 R&D Projects: GA MŠk(CZ) LN00A100; GA AV ČR(CZ) KSK2043105 Grant - others:EU(XE) HPRI-CT-1999-00053; RFBR(RU) 02-02-16966; IAEA(XE) 11655/RBF; INTAS(XX) 01-0572 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20430508 Keywords : laser produced plasma * three-frame interferometry * macroparticle * single and double targets * crater * shock wave * laser energy absorption Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.459, year: 2005

  18. Double Super-Exchange in Silicon Quantum Dots Connected by Short-Bridged Networks

    Science.gov (United States)

    Li, Huashan; Wu, Zhigang; Lusk, Mark

    2013-03-01

    Silicon quantum dots (QDs) with diameters in the range of 1-2 nm are attractive for photovoltaic applications. They absorb photons more readily, transport excitons with greater efficiency, and show greater promise in multiple-exciton generation and hot carrier collection paradigms. However, their high excitonic binding energy makes it difficult to dissociate excitons into separate charge carriers. One possible remedy is to create dot assemblies in which a second material creates a Type-II heterojunction with the dot so that exciton dissociation occurs locally. This talk will focus on such a Type-II heterojunction paradigm in which QDs are connected via covalently bonded, short-bridge molecules. For such interpenetrating networks of dots and molecules, our first principles computational investigation shows that it is possible to rapidly and efficiently separate electrons to QDs and holes to bridge units. The bridge network serves as an efficient mediator of electron superexchange between QDs while the dots themselves play the complimentary role of efficient hole superexchange mediators. Dissociation, photoluminescence and carrier transport rates will be presented for bridge networks of silicon QDs that exhibit such double superexchange. This material is based upon work supported by the Renewable Energy Materials Research Science and Engineering Center (REMRSEC) under Grant No. DMR-0820518 and Golden Energy Computing Organization (GECO).

  19. Improving Breakdown Behavior by Substrate Bias in a Novel Double Epi-layer Lateral Double Diffused MOS Transistor

    International Nuclear Information System (INIS)

    Li Qi; Wang Wei-Dong; Liu Yun; Wei Xue-Ming

    2012-01-01

    A new lateral double diffused MOS (LDMOS) transistor with a double epitaxial layer formed by an n-type substrate and a p-type epitaxial layer is reported (DEL LDMOS). The mechanism of the improved breakdown characteristic is that the high electric field around the drain is reduced by substrate reverse bias, which causes the redistribution of the bulk electric field in the drift region, and the vertical blocking voltage is shared by the drain side and the source side. The numerical results indicate that the trade-off between breakdown voltage and on-resistance of the proposed device is improved greatly in comparison to that of the conventional LDMOS. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  20. Interlayer Structures and Dynamics of Arsenate and Arsenite Intercalated Layered Double Hydroxides: A First Principles Study

    Directory of Open Access Journals (Sweden)

    Yingchun Zhang

    2017-03-01

    Full Text Available In this study, by using first principles simulation techniques, we explored the basal spacings, interlayer structures, and dynamics of arsenite and arsenate intercalated Layered double hydroxides (LDHs. Our results confirm that the basal spacings of NO3−-LDHs increase with layer charge densities. It is found that Arsenic (As species can enter the gallery spaces of LDHs with a Mg/Al ratio of 2:1 but they cannot enter those with lower charge densities. Interlayer species show layering distributions. All anions form a single layer distribution while water molecules form a single layer distribution at low layer charge density and a double layer distribution at high layer charge densities. H2AsO4− has two orientations in the interlayer regions (i.e., one with its three folds axis normal to the layer sheets and another with its two folds axis normal to the layer sheets, and only the latter is observed for HAsO42−. H2AsO3− orientates in a tilt-lying way. The mobility of water and NO3− increases with the layer charge densities while As species have very low mobility. Our simulations provide microscopic information of As intercalated LDHs, which can be used for further understanding of the structures of oxy-anion intercalated LDHs.

  1. Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces

    International Nuclear Information System (INIS)

    Bashiri, Hadi; Azim Karami, Mohammad; Mohammadnejad, Shahramm

    2017-01-01

    By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact (IBC) silicon solar cell, a new passivation layer is investigated. The passivation layer performance is characterized by numerical simulations. Moreover, the dependence of the output parameters of the solar cell on the additional layer parameters (doping concentration and thickness) is studied. By optimizing the additional passivation layer in terms of doping concentration and thickness, the power conversion efficiency could be improved by a factor of 2.5%, open circuit voltage is increased by 30 mV and the fill factor of the solar cell by 7.4%. The performance enhancement is achieved due to the decrease of recombination rate, a decrease in solar cell resistivity and improvement of field effect passivation at heterojunction interface. The above-mentioned results are compared with reported results of the same conventional interdigitated back-contact silicon solar cell structure. Furthermore, the effect of a-Si:H/c-Si interface defect density on IBC silicon solar cell parameters with a new passivation layer is studied. The additional passivation layer also reduces the sensitivity of output parameter of solar cell to interface defect density. (paper)

  2. Double Charged Surface Layers in Lead Halide Perovskite Crystals

    KAUST Repository

    Sarmah, Smritakshi P.

    2017-02-01

    Understanding defect chemistry, particularly ion migration, and its significant effect on the surface’s optical and electronic properties is one of the major challenges impeding the development of hybrid perovskite-based devices. Here, using both experimental and theoretical approaches, we demonstrated that the surface layers of the perovskite crystals may acquire a high concentration of positively charged vacancies with the complementary negatively charged halide ions pushed to the surface. This charge separation near the surface generates an electric field that can induce an increase of optical band gap in the surface layers relative to the bulk. We found that the charge separation, electric field, and the amplitude of shift in the bandgap strongly depend on the halides and organic moieties of perovskite crystals. Our findings reveal the peculiarity of surface effects that are currently limiting the applications of perovskite crystals and more importantly explain their origins, thus enabling viable surface passivation strategies to remediate them.

  3. Numerical simulation of white double-layer coating with different submicron particles on the spectral reflectance

    International Nuclear Information System (INIS)

    Chai, Jiale; Cheng, Qiang; Si, Mengting; Su, Yang; Zhou, Yifan; Song, Jinlin

    2017-01-01

    The spectral selective coating is becoming more and more popular against solar irradiation not only in keeping the coated objects stay cool but also retain the appearance of the objects by reducing the glare of reflected sunlight. In this work a numerical study is investigated to design the double-layer coating with different submicron particles to achieve better performance both in thermal and aesthetic aspects. By comparison, the performance of double-layer coating with TiO_2 and ZnO particles is better than that with single particles. What's more, the particle diameter, volume fraction of particle as well as substrate condition is also investigated. The results show that an optimized double-layer coating with particles should be the one with an appropriate particle diameter, volume fraction and the black substrate. - Highlights: • The double-layer coating has a great influence on both thermal and aesthetic aspects. • The double-layer coating performs better than the uniform one with single particles. • The volume fraction, particle diameter and substrate conditions are optimized.

  4. Mixing Acid Salts and Layered Double Hydroxides in Nanoscale under Solid Condition.

    Science.gov (United States)

    Nakayama, Hirokazu; Hayashi, Aki

    2014-07-30

    The immobilization of potassium sorbate, potassium aspartate and sorbic acid in layered double hydroxide under solid condition was examined. By simply mixing two solids, immobilization of sorbate and aspartate in the interlayer space of nitrate-type layered double hydroxide, so called intercalation reaction, was achieved, and the uptakes, that is, the amount of immobilized salts and the interlayer distances of intercalation compounds were almost the same as those obtained in aqueous solution. However, no intercalation was achieved for sorbic acid. Although intercalation of sorbate and aspartate into chloride-type layered double hydroxide was possible, the uptakes for these intercalation compounds were lower than those obtained using nitrate-type layered double hydroxide. The intercalation under solid condition could be achieved to the same extent as for ion-exchange reaction in aqueous solution, and the reactivity was similar to that observed in aqueous solution. This method will enable the encapsulation of acidic drug in layered double hydroxide as nano level simply by mixing both solids.

  5. Mixing Acid Salts and Layered Double Hydroxides in Nanoscale under Solid Condition

    Directory of Open Access Journals (Sweden)

    Hirokazu Nakayama

    2014-07-01

    Full Text Available The immobilization of potassium sorbate, potassium aspartate and sorbic acid in layered double hydroxide under solid condition was examined. By simply mixing two solids, immobilization of sorbate and aspartate in the interlayer space of nitrate-type layered double hydroxide, so called intercalation reaction, was achieved, and the uptakes, that is, the amount of immobilized salts and the interlayer distances of intercalation compounds were almost the same as those obtained in aqueous solution. However, no intercalation was achieved for sorbic acid. Although intercalation of sorbate and aspartate into chloride-type layered double hydroxide was possible, the uptakes for these intercalation compounds were lower than those obtained using nitrate-type layered double hydroxide. The intercalation under solid condition could be achieved to the same extent as for ion-exchange reaction in aqueous solution, and the reactivity was similar to that observed in aqueous solution. This method will enable the encapsulation of acidic drug in layered double hydroxide as nano level simply by mixing both solids.

  6. Beam Test Results for Single- and Double-Sided Silicon Detector Prototypes of the CMS Central Detector

    CERN Document Server

    Adriani, O

    1997-01-01

    We report the results of two beam tests performed in July and September 1995 at CERN using silicon microstrip detectors of various types: single sided, double sided with small angle stereo strips, double sided with orthogonal strips, double sided with pads. For the read-out electronics use was made of Preshape32, Premux128 and VA1 chips. The signal to noise ratio and the resolution of the detectors was studied for different incident angles of the incoming particles and for different values of the detector bias voltage. The goal of these tests was to check and improve the performances of the prototypes for the CMS Central Detector.

  7. Double-layered ZnO nanostructures for efficient perovskite solar cells

    KAUST Repository

    Mahmood, Khalid; S. Swain, Bhabani; Amassian, Aram

    2014-01-01

    To date, a single layer of TiO2 or ZnO has been the most successful implementations of any electron transport layer (ETL) in solution-processed perovskite solar cells. In a quest to improve the ETL, we explore a new nanostructured double-layer ZnO film for mesoscopic perovskite-based thin film photovoltaics. This approach yields a maximum power conversion efficiency of 10.35%, which we attribute to the morphology of oxide layer and to faster electron transport. The successful implementation of the low-temperature hydrothermally processed double-layer ZnO film as ETL in perovskite solar cells highlights the opportunities to further improve the efficiencies by focusing on the ETL in this rapidly developing field. This journal is

  8. Experiment and simulation of double-layered RC plates under impact loadings. Part 1: Impact tests for double-layered RC plates

    International Nuclear Information System (INIS)

    Shirai, T.; Ueda, M.; Taniguchi, H.; Kambayashi, A.; Ohno, T.; Ishikawa, N.

    1993-01-01

    At a nuclear power plant facility, it should be of interest and important problem to ensure structures against impact loads induced by projectile impacts or plant-internal accidents. It has been well known that local damage consists of spalling of concrete from the impacted area and scabbing of concrete from the back face of the target together with projectile penetration into the target. There are several techniques for improving the impact resistance of RC slabs, that is, lining with a steel plate on the impacted and/or rear face of the slab, making the slab a double-layered composite slab with an elastic absorber and employing a fiber reinforced concrete or a high-strength concrete as the slab materials. Of the many measures available for withstanding impact loads, the use of a double-layered reinforced concrete (RC) slab with absorber is expected to have the higher resistance in reducing or preventing local damage. This paper presents the results of an experimental investigation on the impact resistance of double-layered RC plates subjected to the impact of projectile. In the experiment, the effects of two parameters; the combination of two RC plates having different thicknesses and the existence of an absorber in the middle layer, are mainly investigated. And, the effects of the concrete thickness (7,9 and 11 cm) and the concrete strength (a normal-:35MPa, a lightweight-:40MPa and a high-strength:57MPa) of target were also examined. RC plates, 0.6m-square, were used for test specimens. The projectile has a mass of 0.43kg, made of steel with a flat nose. An average projectile velocity was about 170m/sec. A rubber plate shaped into a square with the same size of RC plate was used for a double-layered specimen as an absorber which was put between two RC plates. It could be concluded that double-layering and presence of an absorber had a considerable effect on the increase of impact resistance of RC plate. In order to reduce local damage, it is more effective to

  9. Beam test of a dual layer silicon charge detector (SCD) for the CREAM experiment

    International Nuclear Information System (INIS)

    Park, N.H.; Ahn, H.S.; Ganel, O.; Han, J.H.; Jeon, J.A.; Kim, C.H.; Kim, K.C.; Lutz, L.; Lee, M.H.; Malinin, A.; Nam, S.; Park, I.H.; Park, J.H.; Seo, E.S.; Walpole, P.; Wu, J.; Yang, J.; Yoo, J.H.; Yoon, Y.S.; Zinn, S.Y.

    2007-01-01

    The Cosmic Ray Energetics and Mass (CREAM) balloon-borne experiment is designed for direct measurement of high-energy cosmic rays. The experimental goal is to measure single-element fluxes of all cosmic-ray nuclei from hydrogen to iron with energies up to the 'knee', or spectral index change near 10 15 eV, observed in the all-particle spectrum. The dual layer Silicon Charge Detector (SCD) was designed to provide precise charge measurements. Each SCD layer has an active area of 77.9cmx79.5cm and consists of 156 silicon sensors mounted on 24 ladders. Each sensor contains a 4 x 4 array of single-sided DC type silicon pixels with an active area of 2.1cm 2 . The detector was flown on the second CREAM flight (December 2005-January 2006) and recovered successfully. The SCD was refurbished for the third CREAM flight and tested with high-energy electron and hadron beams at CERN. This paper reports on the performance of the SCD during the beam test

  10. Electrochemical lithiation of thin silicon based layers potentiostatically deposited from ionic liquid

    International Nuclear Information System (INIS)

    Vlaic, Codruta Aurelia; Ivanov, Svetlozar; Peipmann, Ralf; Eisenhardt, Anja; Himmerlich, Marcel; Krischok, Stefan; Bund, Andreas

    2015-01-01

    Thin silicon layers containing about 20% carbon and 20% oxygen were deposited on copper substrates by potentiostatic electroreduction from a 1 M SiCl 4 1-butyl-1-methyl-pyrrolidinium bis (trifluoromethyl) sulfonylimide [BMP][TFSI] electrolyte. The electrodeposition process was investigated by means of voltammetric techniques, coupled with in-situ microgravimetry (quartz crystal microbalance, QCM). The electrochemical and QCM data suggest a possible contribution of a partial Si 4+ to Si 2+ reduction and/or a restructuring of the metallic substrate. Considerable impact of side reactions parallel to the deposition process was indicated by QCM measurements performed under potentiostatic and potentiodynamic conditions. The deposition of silicon-based films was confirmed by energy dispersive X-ray analysis (EDX). Analysis of the chemical composition of the deposit and its elemental distribution were achieved by depth profiling X-ray photoelectron spectroscopy (XPS). The electrodeposited silicon containing layers showed stable lithiation and delithiation with capacity values of about 1200 mAhg −1 and 80% capacity retention after 300 cycles in standard EC/DMC electrolytes. In ionic liquid (IL) the material displayed lower capacity of ca. 500 mAhg −1 , which can be attributed to the higher viscosity of this electrolyte and deposition of IL decomposition products during lithiation

  11. The origin of double peak electric field distribution in heavily irradiated silicon detectors

    CERN Document Server

    Eremin, V; Li, Z

    2002-01-01

    The first observation of double peak (DP) electric field distribution in heavily neutron irradiated (>10 sup 1 sup 4 n/cm sup 2) semiconductor detectors has been published about 6 yr ago. However, this effect was not quantitatively analyzed up to now. The explanation of the DP electric field distribution presented in this paper is based on the properties of radiation induced deep levels in silicon, which act as deep traps, and on the distribution of the thermally generated free carrier concentration in the detector bulk. In the frame of this model, the earlier published considerations on the so-called 'double junction (DJ) effect' are discussed as well. The comparison of the calculated electric field profiles at different temperatures with the experimental ones allows one to determine a set of deep levels. This set of deep levels, and their charge filling status are essential to the value and the distribution of space charge in the space charge region in the range of 305-240 K, which is actual temperature ran...

  12. Membrane interactions and antimicrobial effects of layered double hydroxide nanoparticles

    DEFF Research Database (Denmark)

    Malekkhaiat Häffner, S; Nyström, L; Nordström, R

    2017-01-01

    Membrane interactions are critical for the successful use of inorganic nanoparticles as antimicrobial agents and as carriers of, or co-actives with, antimicrobial peptides (AMPs). In order to contribute to an increased understanding of these, we here investigate effects of particle size (42-208 nm...... into size-dependent synergistic effects with the antimicrobial peptide LL-37. Due to strong interactions with anionic lipopolysaccharide and peptidoglycan layers, direct membrane disruption of both Gram-negative and Gram-positive bacteria is suppressed. However, LDH nanoparticles cause size-dependent charge...

  13. Application of double-layered skin phantoms for optical flow imaging during laser tattoo treatments

    Science.gov (United States)

    Lee, Byeong-il; Song, Woosub; Kim, Hyejin; Kang, Hyun Wook

    2016-05-01

    The feasible application of double-layered skin phantoms was evaluated to identify artificial blood flow with a Doppler optical coherence tomography (DOCT) system for laser tattoo treatments. Polydimethylsiloxane (PDMS) was used to fabricate the artificial phantoms with flow channels embedded. A double-integrating sphere system with an inverse adding-doubling method quantified both the absorption and the reduced scattering coefficients for epidermis and dermis phantoms. Both OCT and caliper measurements confirmed the double-layered phantom structure (epidermis = 136 ± 17 µm vs. dermis = 3.0 ± 0.1 mm). The DOCT method demonstrated that high flow rates were associated with high image contrast, visualizing the position and the shape of the flow channel. Application of the channel-embedded skin phantoms in conjunction with DOCT can be a reliable technique to assess dynamic variations in the blood flow during and after laser tattoo treatments.

  14. Current limitation and formation of plasma double layers in a non-uniform magnetic field

    International Nuclear Information System (INIS)

    Plamondon, R.; Teichmann, J.; Torven, S.

    1986-07-01

    Formation of strong double layers has been observed experimentally in a magnetised plasma column maintained by a plasma source. The magnetic field is approximately axially homogenous except in a region at the anode where the electric current flows into a magnetic mirror. The double layer has a stationary position only in the region of non-uniform magnetic field or at the aperture separating the source and the plasma column. It is characterized by a negative differential resistance in the current-voltage characteristic of the device. The parameter space,where the double layer exists, has been studied as well as the corresponding potential profiles and fluctuation spectra. The electric current and the axial electric field are oppositely directed between the plasma source and a potential minimum which is formed in the region of inhomogeneous magnetic field. Electron reflection by the resulting potential barrier is found to be an important current limitation mechanism. (authors)

  15. Density functional theory of the electrical double layer: the RFD functional

    International Nuclear Information System (INIS)

    Gillespie, Dirk; Valisko, Monika; Boda, Dezso

    2005-01-01

    Density functional theory (DFT) of electrolytes is applied to the electrical double layer under a wide range of conditions. The ions are charged, hard spheres of different size and valence, and the wall creating the double layer is uncharged, weakly charged, and strongly charged. Under all conditions, the density and electrostatic potential profiles calculated using the recently proposed RFD electrostatic functional (Gillespie et al 2002 J. Phys.: Condens. Matter 14 12129; 2003 Phys. Rev. E 68 031503) compare well to Monte Carlo simulations. When the wall is strongly charged, the RFD functional results agree with the results of a simpler perturbative electrostatic DFT, but the two functionals' results qualitatively disagree when the wall is uncharged or weakly charged. The RFD functional reproduces these phenomena of weakly charged double layers. It also reproduces bulk thermodynamic quantities calculated from pair correlation functions

  16. Low frequency solitons and double layers in a magnetized plasma with two temperature electrons

    Energy Technology Data Exchange (ETDEWEB)

    Rufai, O. R. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Bharuthram, R. [Office of the Deputy Vice Chancellor (Academic), University of the Western Cape, Bellville (South Africa); Singh, S. V. [Indian Institute of Geomagnetism, New Panvel (W), Navi Mumbai-410218 (India); School of Chemistry and Physics, University of Kwa-Zulu Natal, Durban (South Africa); Lakhina, G. S. [Indian Institute of Geomagnetism, New Panvel (W), Navi Mumbai-410218 (India)

    2012-12-15

    Finite amplitude non-linear ion-acoustic solitary waves and double layers are studied in a magnetized plasma with cold ions fluid and two distinct groups of Boltzmann electrons, using the Sagdeev pseudo-potential technique. The conditions under which the solitary waves and double layers can exist are found both analytically and numerically. We have shown the existence of negative potential solitary waves and double layers for subsonic Mach numbers, whereas in the unmagnetized plasma they can only in the supersonic Mach number regime. For the plasma parameters in the auroral region, the electric field amplitude of the solitary structures comes out to be 49 mV/m which is in agreement of the Viking observations in this region.

  17. Low frequency solitons and double layers in a magnetized plasma with two temperature electrons

    International Nuclear Information System (INIS)

    Rufai, O. R.; Bharuthram, R.; Singh, S. V.; Lakhina, G. S.

    2012-01-01

    Finite amplitude non-linear ion-acoustic solitary waves and double layers are studied in a magnetized plasma with cold ions fluid and two distinct groups of Boltzmann electrons, using the Sagdeev pseudo-potential technique. The conditions under which the solitary waves and double layers can exist are found both analytically and numerically. We have shown the existence of negative potential solitary waves and double layers for subsonic Mach numbers, whereas in the unmagnetized plasma they can only in the supersonic Mach number regime. For the plasma parameters in the auroral region, the electric field amplitude of the solitary structures comes out to be 49 mV/m which is in agreement of the Viking observations in this region.

  18. Double-layer neutron shield design as neutron shielding application

    Science.gov (United States)

    Sariyer, Demet; Küçer, Rahmi

    2018-02-01

    The shield design in particle accelerators and other high energy facilities are mainly connected to the high-energy neutrons. The deep penetration of neutrons through massive shield has become a very serious problem. For shielding to be efficient, most of these neutrons should be confined to the shielding volume. If the interior space will become limited, the sufficient thickness of multilayer shield must be used. Concrete and iron are widely used as a multilayer shield material. Two layers shield material was selected to guarantee radiation safety outside of the shield against neutrons generated in the interaction of the different proton energies. One of them was one meter of concrete, the other was iron-contained material (FeB, Fe2B and stainless-steel) to be determined shield thicknesses. FLUKA Monte Carlo code was used for shield design geometry and required neutron dose distributions. The resulting two layered shields are shown better performance than single used concrete, thus the shield design could leave more space in the interior shielded areas.

  19. Conditions for double layers in the earth's magnetosphere and perhaps in other astrophysical objects

    Science.gov (United States)

    Lyons, L. R.

    1987-01-01

    It is suggested that the features which govern the formation of the double layers are: (1) the divergence of the magnetospheric electric field, (2) the ionospheric conductivity, and (3) the current-voltage characteristics of auroral magnetic field lines. Also considered are conditions in other astrophysical objects that could lead to the formation of DLs in a manner analogous to what occurs in the earth's auroral zones. It is noted that two processes can drive divergent Pedersen currents within a collisional conducting layer: (1) sheared plasma flow applied anywhere along the magnetic field lines connected to the conducting layer and (2) a neutral flow with shear within the conducting layer.

  20. Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

    Science.gov (United States)

    Asuha,; Kobayashi, Takuya; Maida, Osamu; Inoue, Morio; Takahashi, Masao; Todokoro, Yoshihiro; Kobayashi, Hikaru

    2002-10-01

    Chemical oxidation of Si by use of azeotrope of nitric acid and water can form 1.4-nm-thick silicon dioxide layers with a leakage current density as low as those of thermally grown SiO2 layers. The capacitance-voltage (C-V) curves for these ultrathin chemical SiO2 layers have been measured due to the low leakage current density. The leakage current density is further decreased to approx1/5 (cf. 0.4 A/cm2 at the forward gate bias of 1 V) by post-metallization annealing at 200 degC in hydrogen. Photoelectron spectroscopy and C-V measurements show that this decrease results from (i) increase in the energy discontinuity at the Si/SiO2 interface, and (ii) elimination of Si/SiO2 interface states and SiO2 gap states.

  1. ZnO buffer layer for metal films on silicon substrates

    Science.gov (United States)

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  2. Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

    Science.gov (United States)

    Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

    2018-03-27

    There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

  3. Near-infrared electroluminescence from double-emission-layers devices based on Ytterbium (III) complexes

    International Nuclear Information System (INIS)

    Li Zhefeng; Zhang Hongjie; Yu Jiangbo

    2012-01-01

    We investigated near-infrared electroluminescence properties of two lanthanide complexes Yb(PMBP) 3 Bath [PMBP = tris(1-phenyl-3-methyl-4-(4-tert-butylbenzacyl)-5-pyrazolone); Bath = bathophenanthroline] and Yb(PMIP) 3 TP 2 [PMIP = tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone); TP = triphenyl phosphine oxide] by fabricated the double-emission-layers devices. From the device characteristics, it is known that holes are easier to transport in Yb(PMIP) 3 TP 2 layer and electrons are easier to transport in Yb(PMBP) 3 Bath layer, at the same time, both of the two complexes can be acted as emission layers in the device. The recombination region of carriers has been confined in the interface of Yb(PMIP) 3 TP 2 /Yb(PMBP) 3 Bath, and pure Yb 3+ ion characteristic emission centered at 980 nm has been obtained. The device shows the maximum near-infrared irradiance as 14.7 mW/m 2 at the applied voltage of 17.8 V. - Highlights: ► Near-infrared electroluminescent devices with Yb(III) complexes as emission layers. ► Double-emission layer device structure introduced to balance carriers. ► Improved performance of double-emission layer device.

  4. Deposition and micro electrical discharge machining of CVD-diamond layers incorporated with silicon

    Science.gov (United States)

    Kühn, R.; Berger, T.; Prieske, M.; Börner, R.; Hackert-Oschätzchen, M.; Zeidler, H.; Schubert, A.

    2017-10-01

    In metal forming, lubricants have to be used to prevent corrosion or to reduce friction and tool wear. From an economical and ecological point of view, the aim is to avoid the usage of lubricants. For dry deep drawing of aluminum sheets it is intended to apply locally micro-structured wear-resistant carbon based coatings onto steel tools. One type of these coatings are diamond layers prepared by chemical vapor deposition (CVD). Due to the high strength of diamond, milling processes are unsuitable for micro-structuring of these layers. In contrast to this, micro electrical discharge machining (micro EDM) is a suitable process for micro-structuring CVD-diamond layers. Due to its non-contact nature and its process principle of ablating material by melting and evaporating, it is independent of the hardness, brittleness or toughness of the workpiece material. In this study the deposition and micro electrical discharge machining of silicon incorporated CVD-diamond (Si-CVD-diamond) layers were presented. For this, 10 µm thick layers were deposited on molybdenum plates by a laser-induced plasma CVD process (LaPlas-CVD). For the characterization of the coatings RAMAN- and EDX-analyses were conducted. Experiments in EDM were carried out with a tungsten carbide tool electrode with a diameter of 90 µm to investigate the micro-structuring of Si-CVD-diamond. The impact of voltage, discharge energy and tool polarity on process speed and resulting erosion geometry were analyzed. The results show that micro EDM is a suitable technology for micro-structuring of silicon incorporated CVD-diamond layers.

  5. Electroresistance effect in gold thin film induced by ionic-liquid-gated electric double layer

    International Nuclear Information System (INIS)

    Nakayama, Hiroyasu; Ohtani, Takashi; Fujikawa, Yasunori; Ando, Kazuya; Saitoh, Eiji; Ye, Jianting; Iwasa, Yoshihiro

    2012-01-01

    Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25) MV cm -1 of electric field by applying only 1.7 V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems. (author)

  6. Current carrying properties of double layers and low frequency auroral fluctuations

    International Nuclear Information System (INIS)

    Singh, N.; Schunk, R.W.

    1982-01-01

    Numerical simulations showed recurring interruption and recovery of electron and ion currents through double layers. The time period tau of the recurring phenomena is governed by the ion dynamics; for ions with a drift V/sub i/ entering the simulation plasma such that V/sub i/ V/sub ti/ ion-acoustic modes also appear in the electron- and ion-current fluctuations. The electron current fluctuations are governed by the ion current through the Langmuir criterion. It is suggested that some low frequency auroral fluctuations could possibly be explained by current fluctuations through double layers

  7. Luminescent materials based on Tb, Eu-containing layered double hydroxides

    International Nuclear Information System (INIS)

    Zhuravleva, N.G.; Eliseev, A.A.; Lukashin, A.V.; Kinast, U.; Tret'yakov, Yu.D.

    2004-01-01

    Luminescent materials on the basis of magnesium-aluminium layered double hydroxides with intercalated anionic complexes of terbium and europium picolinates were synthesized. Relying on data of spectroscopy, elementary and X-ray phase analyses, the change in the rare earth complex structure and metal/ligand ratio, depending on the hydroxide layer charge, determined by Mg/Al ratio in the double hydroxide, were ascertained. The values of quantum yields of luminescence for terbium-containing samples amounted to 30-50% [ru

  8. Influence of Fabric Parameters on Thermal Comfort Performance of Double Layer Knitted Interlock Fabrics

    Directory of Open Access Journals (Sweden)

    Afzal Ali

    2017-03-01

    Full Text Available The aim of this study was to analyse the effects of various fabric parameters on the thermal resistance, thermal conductivity, thermal transmittance, thermal absorptivity and thermal insulation of polyester/cotton double layer knitted interlock fabrics. It was found that by increasing fibre content with higher specific heat increases the thermal insulation while decreases the thermal transmittance and absorptivity of the fabric. It was concluded that double layer knitted fabrics developed with higher specific heat fibres, coarser yarn linear densities, higher knitting loop length and fabric thickness could be adequately used for winter clothing purposes.

  9. Ion-acoustic double-layers in a magnetized plasma with nonthermal electrons

    Energy Technology Data Exchange (ETDEWEB)

    Rios, L. A. [Centro Brasileiro de Pesquisas Físicas and Instituto Nacional de Ciência e Tecnologia de Sistemas Complexos, Rua Xavier Sigaud 150, 22290-180 Rio de Janeiro (Brazil); Galvão, R. M. O. [Centro Brasileiro de Pesquisas Físicas and Instituto Nacional de Ciência e Tecnologia de Sistemas Complexos, Rua Xavier Sigaud 150, 22290-180 Rio de Janeiro (Brazil); Instituto de Física, Universidade de São Paulo, 05508-900 São Paulo (Brazil)

    2013-11-15

    In the present work we investigate the existence of obliquely propagating ion-acoustic double layers in magnetized two-electron plasmas. The fluid model is used to describe the ion dynamics, and the hot electron population is modeled via a κ distribution function, which has been proved to be appropriate for modeling non-Maxwellian plasmas. A quasineutral condition is assumed to investigate these nonlinear structures, which leads to the formation of double-layers propagating with slow ion-acoustic velocity. The problem is investigated numerically, and the influence of parameters such as nonthermality is discussed.

  10. Double-layer ion acceleration triggered by ion magnetization in expanding radiofrequency plasma sources

    International Nuclear Information System (INIS)

    Takahashi, Kazunori; Charles, Christine; Boswell, Rod W.; Fujiwara, Tamiya

    2010-01-01

    Ion energy distribution functions downstream of the source exit in magnetically expanding low-pressure plasmas are experimentally investigated for four source tube diameters ranging from about 5 to 15 cm. The magnetic-field threshold corresponding to a transition from a simple expanding plasma to a double layer-containing plasma is observed to increase with a decrease in the source tube diameter. The results demonstrate that for the four geometries, the double layer and the accelerated ion beam form when the ion Larmour radius in the source becomes smaller than the source tube radius, i.e., when the ions become magnetized in the source tube.

  11. Double-Layered Lateral Meniscus in an 8-Year-Old Child: Report of a Rare Case

    OpenAIRE

    Araki, Susumu; Kubo, Mitsuhiko; Kumagai, Kosuke; Imai, Shinji

    2016-01-01

    Reports of congenital abnormalities of the lateral meniscus include discoid meniscus, accessory meniscus, double-layered meniscus, and ring-shaped meniscus. Particularly, only a few cases of double-layered meniscus have been reported. We report a case of double-layered lateral meniscus, in which an additional semicircular meniscus was observed under the normal lateral meniscus. The accessory hemimeniscus was resected by means of arthroscopic surgery. This case demonstrates an interesting and ...

  12. Application of magnetic printing method to hard-disk media with double recording layers

    International Nuclear Information System (INIS)

    Ono, Takuya; Kuboki, Yoshiyuki; Ajishi, Yoshifumi; Saito, Akira

    2003-01-01

    The magnetic printing method, which can duplicate soft magnetic patterns containing digital information such as servosignals formed on a master disk onto recording media, enables signals to be written to hard-disk media having high coercivities above 6000 Oe. We propose the application of the magnetic printing method to a hard-disk medium having double recording layers, one layer of which has high coercivity and is to be printed with digital information. This double recording layer medium is a hard-disk medium that has a magnetic read-only-memory (MROM) layer. In this study, we demonstrated a method for printing to this medium, which has MROM, and discussed the magnetic properties and recording performances of this medium

  13. Oxygen recoil implant from SiO2 layers into single-crystalline silicon

    International Nuclear Information System (INIS)

    Wang, G.; Chen, Y.; Li, D.; Oak, S.; Srivastav, G.; Banerjee, S.; Tasch, A.; Merrill, P.; Bleiler, R.

    2001-01-01

    It is important to understand the distribution of recoil-implanted atoms and the impact on device performance when ion implantation is performed at a high dose through surface materials into single crystalline silicon. For example, in ultralarge scale integration impurity ions are often implanted through a thin layer of screen oxide and some of the oxygen atoms are inevitably recoil implanted into single-crystalline silicon. Theoretical and experimental studies have been performed to investigate this phenomenon. We have modified the Monte Carlo ion implant simulator, UT-Marlowe (B. Obradovic, G. Wang, Y. Chen, D. Li, C. Snell, and A. F. Tasch, UT-MARLOWE Manual, 1999), which is based on the binary collision approximation, to follow the full cascade and to dynamically modify the stoichiometry of the Si layer as oxygen atoms are knocked into it. CPU reduction techniques are used to relieve the demand on computational power when such a full cascade simulation is involved. Secondary ion mass spectrometry (SIMS) profiles of oxygen have been carefully obtained for high dose As and BF 2 implants at different energies through oxide layers of various thicknesses, and the simulated oxygen profiles are found to agree very well with the SIMS data. [copyright] 2001 American Institute of Physics

  14. Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

    Science.gov (United States)

    Weiying, Ou; Lei, Zhao; Hongwei, Diao; Jun, Zhang; Wenjing, Wang

    2011-05-01

    Porous silicon (PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte. Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover, the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated. The results show that the TMAH textured surfaces with PS formation present a dramatic decrease in reflectance. The longer the anodizing time is, the lower the reflectance. Moreover, an initial surface with bigger pyramids achieved lower reflectance in a short wavelength range. A minimum reflectance of 3.86% at 460 nm is achieved for a short anodizing time of 2 min. Furthermore, the reflectance spectrum of the sample, which was etched in 3 vol.% TMAH for 25 min and then anodized for 20 min, is extremely flat and lies between 3.67% and 6.15% in the wavelength range from 400 to 1040 nm. In addition, for a short anodizing time, a slight increase in the effective carrier lifetime is observed. Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells.

  15. Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Ou Weiying; Zhao Lei; Diao Hongwei; Zhang Jun; Wang Wenjing, E-mail: wjwangwj@126.com [Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China)

    2011-05-15

    Porous silicon (PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte. Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover, the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated. The results show that the TMAH textured surfaces with PS formation present a dramatic decrease in reflectance. The longer the anodizing time is, the lower the reflectance. Moreover, an initial surface with bigger pyramids achieved lower reflectance in a short wavelength range. A minimum reflectance of 3.86% at 460 nm is achieved for a short anodizing time of 2 min. Furthermore, the reflectance spectrum of the sample, which was etched in 3 vol.% TMAH for 25 min and then anodized for 20 min, is extremely flat and lies between 3.67% and 6.15% in the wavelength range from 400 to 1040 nm. In addition, for a short anodizing time, a slight increase in the effective carrier lifetime is observed. Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells. (semiconductor technology)

  16. Amorphous silicon pixel layers with cesium iodide converters for medical radiography

    International Nuclear Information System (INIS)

    Jing, T.; Cho, G.; Goodman, C.A.

    1993-11-01

    We describe the properties of evaporated layers of Cesium Iodide (Thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220μm. We used the two-boat evaporator system to deposit CsI(Tl) layers. This system ensures the formation of the scintillator film with homogenous thallium concentration which is essential for optimizing the scintillation light emission efficiency. The Tl concentration was kept to 0.1--0.2 mole percent for the highest light output. Temperature annealing can affect the microstructure as well as light output of the CsI(Tl) film. 200--300C temperature annealing can increase the light output by a factor of two. The amorphous silicon pixel arrays are p-i-n diodes approximately lμm thick with transparent electrodes to enable them to detect the scintillation light produced by X-rays incident on the CsI(Tl). Digital radiography requires a good spatial resolution. This is accomplished by making the detector pixel size less then 50μm. The light emission from the CsI(Tl) is collimated by techniques involving the deposition process on pattered substrates. We have measured MTF of greater than 12 line pairs per mm at the 10% level

  17. Surface layers in the 4A group metals with implanted silicon ions

    International Nuclear Information System (INIS)

    Kovneristyj, Yu.K.; Vavilova, V.V.; Krasnopevtsev, V.V.; Galkin, L.N.; Kudyshev, A.N.; Klechkovskaya, V.V.

    1987-01-01

    A study was made on the change of structure and phase composition of fine near the surface layers of 4A group metals (Hf, Zr, Ti) during ion Si implantation and successive thermal annealing at elevated temperatures. Implantation of Si + ions with 30 or 16 keV energy in Ti, Zr and Hf at room temperature results to amorphization of metal surface layer. The surface hafnium and titanium layer with implanted Si atoms due to interaction with residual atmosphere of oxygen turns during annealing at 870 K to amorphous solid solution of HfO 2m or TiO 2 with Si, preventing further metal oxidation; layers of amorphous alloy are characterized by thermal stability up to 1270 K. Oxidation of the surface amorphous layer in residual oxygen atmosphere and its crystallization in ZrO 2 take place in result of Zr annealing with implanted Si ions at temperature not exceeding 870 K. Similar phenomena are observed in the case of hafnium with implanted oxygen ions or small dose of silicon ions. Thermal stability of amorphous layers produced during ion implantation of Si in Ti, Zr and Hf corresponds to scale resistance of monolithic alloys in Ti-Si, Zr-Si and Hf-Si systems

  18. Observation of negative potential depression on double layer during a phase of current disruption

    International Nuclear Information System (INIS)

    Fujita, H.; Matsuo, K.; Yagura, S.

    1984-01-01

    The negative potential depression with a depth of approximately electron temperature is observed on the low potential tail of the double layer just at the moment when the electron current passing through the layer is disrupted. The depression is confirmed to serve as an electron thermal barrier and form an ion hole from phase-space measurements of electrons and ions, respectively. The depth of the depression becomes maximum when the density around the depression becomes most inhomogeneous. (author)

  19. Silicon-depth profiling with Rutherford backscattering in photoresist layers; a study on the effects of degradation

    NARCIS (Netherlands)

    IJzendoorn, van L.J.; Schellekens, J.P.W.

    1989-01-01

    The reaction of a silicon-containing vapor with a photoresist layer, as used in some dry developable lithographic processes, was studied with Rutherford backscattering spectrometry. Degradation of the polymer layer under ion beam irradiation was observed, but it was found that this had no influence

  20. Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Paviet-Salomon, B.; Gall, S.; Slaoui, A.

    2013-01-01

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q fix ) and the effective lifetimes (τ eff ) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ eff than standard undoped layers. In contrast, B-doped layers exhibit lower τ eff . A strong Q fix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

  1. The application of thick hydrogenated amorphous silicon layers to charged particle and x-ray detection

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Fujieda, I.; Kaplan, S.N.; Qureshi, S.; Street, R.A.

    1989-04-01

    We outline the characteristics of thick hydrogenated amorphous silicon layers which are optimized for the detection of charged particles, x-rays and γ-rays. Signal amplitude as a function of the linear energy transfer of various particles are given. Noise sources generated by the detector material and by the thin film electronics - a-Si:H or polysilicon proposed for pixel position sensitive detectors readout are described, and their relative amplitudes are calculated. Temperature and neutron radiation effects on leakage currents and the corresponding noise changes are presented. 17 refs., 12 figs., 2 tabs

  2. Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Larcher, L.; Visconti, A.; Bonanomi, M.

    2006-01-01

    A single ion impinging on a thin silicon dioxide layer generates a number of electron/hole pairs proportional to its linear energy transfer coefficient. Defects generated by recombination can act as a conductive path for electrons that cross the oxide barrier, thanks to a multitrap-assisted mechanism. We present data on the dependence of this phenomenon on the oxide thickness by using floating gate memory arrays. The tiny number of excess electrons stored in these devices allows for extremely high sensitivity, impossible with any direct measurement of oxide leakage current. Results are of particular interest for next generation devices

  3. The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

    DEFF Research Database (Denmark)

    Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas

    2014-01-01

    Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding...... short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account...

  4. Asymptotic theory of double layer and shielding of electric field at the edge of illuminated plasma

    Energy Technology Data Exchange (ETDEWEB)

    Benilov, M. S. [Departamento de Física, CCCEE, Universidade da Madeira, Largo do Município, 9000 Funchal (Portugal); Thomas, D. M. [Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2BW (United Kingdom)

    2014-04-15

    The method of matched asymptotic expansions is applied to the problem of a collisionless plasma generated by UV illumination localized in a central part of the plasma in the limiting case of small Debye length λ{sub D}. A second-approximation asymptotic solution is found for the double layer positioned at the boundary of the illuminated region and for the un-illuminated plasma for the plane geometry. Numerical calculations for different values of λ{sub D} are reported and found to confirm the asymptotic results. The net integral space charge of the double layer is asymptotically small, although in the plane geometry it is just sufficient to shield the ambipolar electric field existing in the illuminated region and thus to prevent it from penetrating into the un-illuminated region. The double layer has the same mathematical nature as the intermediate transition layer separating an active plasma and a collisionless sheath, and the underlying physics is also the same. In essence, the two layers represent the same physical object: a transonic layer.

  5. Single-layer versus double-layer laparoscopic intracorporeally sutured gastrointestinal anastomoses in the canine model.

    Science.gov (United States)

    Tavakoli, Azine; Bakhtiari, Jalal; Khalaj, Ali Reza; Gharagozlou, Mohammad Javad; Veshkini, Abbas

    2010-01-01

    The objective of this study was to compare the gross and histopathologic changes following 1- versus 2-layer hand-sewn suture techniques in laparoscopic gastrointestinal anastomosis in dogs. This was an experimental prospective study of 16 healthy mixed breed male and female dogs. Animals were randomly divided into 2 groups. Two-layer side-to-side hand-sewn laparoscopic gastrojejunostomies were performed in group A, so that simple interrupted sutures were placed in the outer layer and simple continuous suture was used in the inner layer. The 1-layer simple continuous anastomosis between the stomach and jejunum was done in group B precisely. Specimen were collected from the sites of anastomosis, and H&E statining was performed for light microscopic studies. All animals survived the surgery. There was no gross inflammation, ischemia, apparent granulation tissue, abscess or fistula formation, leakage or stricture formation, and all sites of anastomosis were patent. Several adhesion formations were found in the abdomen with the higher incidence in the control group. Mean scores of leukocyte infiltration and granulation tissue formation at the sites of anastomosis were statistically insignificant between groups (P>0.05). Gross and histopathologic findings revealed that hand-sewn laparoscopic gastrointestinal anastomosis with the 1-layer suture technique is comparable to the 2-layer suture technique.

  6. Characterization of Ag-porous silicon nanostructured layer formed by an electrochemical etching of p-type silicon surface for bio-application

    Science.gov (United States)

    Naddaf, M.; Al-Mariri, A.; Haj-Mhmoud, N.

    2017-06-01

    Nanostructured layers composed of silver-porous silicon (Ag-PS) have been formed by an electrochemical etching of p-type (1 1 1) silicon substrate in a AgNO3:HF:C2H5OH solution at different etching times (10 min-30 min). Scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) results reveal that the produced layers consist of Ag dendrites and a silicon-rich porous structure. The nanostructuring nature of the layer has been confirmed by spatial micro-Raman scattering and x-ray diffraction techniques. The Ag dendrites exhibit a surface-enhanced Raman scattering (SERS) spectrum, while the porous structure shows a typical PS Raman spectrum. Upon increasing the etching time, the average size of silicon nanocrystallite in the PS network decreases, while the average size of Ag nanocrystals is slightly affected. In addition, the immobilization of prokaryote Salmonella typhimurium DNA via physical adsorption onto the Ag-PS layer has been performed to demonstrate its efficiency as a platform for detection of biological molecules using SERS.

  7. Improved Efficiency of Polymer Solar Cells by means of Coating Hole Transporting Layer as Double Layer Deposition

    Science.gov (United States)

    Chonsut, T.; Kayunkid, N.; Rahong, S.; Rangkasikorn, A.; Wirunchit, S.; Kaewprajak, A.; Kumnorkaew, P.; Nukeaw, J.

    2017-09-01

    Polymer solar cells is one of the promising technologies that gain tremendous attentions in the field of renewable energy. Optimization of thickness for each layer is an important factor determining the efficiency of the solar cells. In this work, the optimum thickness of Poly(3,4-ethylenedioxythione): poly(styrenesulfonate) (PEDOT:PSS), a famous polymer widely used as hole transporting layer in polymer solar cells, is determined through the analyzing of device’s photovoltaic parameters, e.g. short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF) as well as power conversion efficiency (PCE). The solar cells were prepared with multilayer of ITO/PEDOT:PSS/PCDTBT:PC70BM/TiOx/Al by rapid convective deposition. In such preparation technique, the thickness of the thin film is controlled by the deposition speed. The faster deposition speed is used, the thicker film is obtained. Furthermore, double layer deposition of PEDOT:PSS was introduced as an approach to improve solar cell efficiency. The results obviously reveal that, with the increase of PEDOT:PSS thickness, the increments of Jsc and FF play the important role to improve PCE from 3.21% to 4.03%. Interestingly, using double layer deposition of PEDOT:PSS shows the ability to enhance the performance of the solar cells to 6.12% under simulated AM 1.5G illumination of 100 mW/cm2.

  8. Preparation of PLGA/Rose Bengal colloidal particles by double emulsion and layer-by-layer for breast cancer treatment.

    Science.gov (United States)

    Loya-Castro, María F; Sánchez-Mejía, Mariana; Sánchez-Ramírez, Dante R; Domínguez-Ríos, Rossina; Escareño, Noé; Oceguera-Basurto, Paola E; Figueroa-Ochoa, Édgar B; Quintero, Antonio; Del Toro-Arreola, Alicia; Topete, Antonio; Daneri-Navarro, Adrián

    2018-05-15

    The use of colloidal particles (CPs) in the transport of drugs is developing rapidly thanks to its effectiveness and biosafety, especially in the treatment of various types of cancer. In this study Rose Bengal/PLGA CPs synthesized by double emulsion (W/O/W) and by electrostatic adsorption (layer-by-layer), were characterized and evaluated as potential breast cancer treatment. CPs were evaluated in terms of size, zeta potential, drug release kinetics and cell viability inhibition efficacy with the triple negative breast cancer cell line HCC70. The results showed that both types of CPs can be an excellent alternative to conventional cancer treatment by taking advantage of the enhanced permeation and retention (EPR) effect, manifested by solid tumors; however, the double emulsion CPs showed more suitable delivery times of up to 60% within two days, while layer-by-layer showed fast release of 50% in 90 min. Both types of CPs were capable to decrease cell viability, which encourage us to further testing in in vivo models to prove their efficacy and feasible use in the treatment of triple negative breast cancer. Copyright © 2018 Elsevier Inc. All rights reserved.

  9. Silicon surface passivation using thin HfO2 films by atomic layer deposition

    International Nuclear Information System (INIS)

    Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

    2015-01-01

    Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

  10. Some dynamical properties of very strong double layers in a triple plasma device

    International Nuclear Information System (INIS)

    Carpenter, T.; Torven, S.

    1987-01-01

    Experimental results on three dynamic properties of very strong double layers observed in a triple plasma device are presented. First, it is observed that when an inductance of sufficient size is inserted in series with the external bias supply used to produce the double layer, disruptions in the plasma current occur accompanied by disruptions in the double layer potential. Second, it is observed that with all external reactances reduced as much as possible, a sort of jitter-motion occurs in the position of the double layer around its equilibrium position. Third, when the external bias supply is pulsed, the initial potential distribution is observed to have an essentially uniform slope, as in the case of a vacuum capacitor. The disruption phenomenon may be explained in terms of the behavior of the potential structure as a function of the bias voltage and this explanation is discussed along with the experimental evidence for its validity. A comparable understanding of the other two phenomena has not been achieved, but in both cases there are qualitative difference between the behavior reported here and what has been observed in Q-machines and these difference are discussed. (author)

  11. Double-layer imprint lithography on wafers and foils from the submicrometer to the millimeter scale

    NARCIS (Netherlands)

    Moonen, P.F.; Yakimets, I.; Peter, M.; Meinders, E.R.; Huskens, J.

    2011-01-01

    In this paper, a thermal imprint technique, double-layer nanoimprint lithography (dlNIL), is introduced, allowing complete filling of features in the dimensional range of submicrometer to millimeter. The imprinting and filling quality of dlNIL was studied on Si substrates as a model system and

  12. Competitive reactions during synthesis of zinc aluminum layered double hydroxides by thermal hydrolysis of urea

    DEFF Research Database (Denmark)

    Staal, Line Boisen; Pushparaj, Suraj Shiv Charan; Forano, Claude

    2017-01-01

    Homogeneous precipitation by thermal hydrolysis of urea (“The urea method”) is preferred for the preparation of pure and highly crystalline layered double hydroxides (LDHs). However, our recent study revealed large concentrations of amorphous aluminum hydroxide (AOH) in several zinc(II) aluminum(...

  13. High-frequency permeability in double-layered structure of amorphous Co-Ta-Zr films

    International Nuclear Information System (INIS)

    Ochiai, Y.; Hayakawa, M.; Hayashi, K.; Aso, K.

    1988-01-01

    The high-frequency permeability of amorphous Co-Ta-Zr films was studied and the frequency dependence was described in terms of the eddy-current-loss formula. For the double-layered structure intervened with SiO 2 film, the degradation of the permeability became apparent with the decrease of SiO 2 thickness

  14. The recording characteristics of particulate double layers with hard-magnetic and soft-magnetic underlayers

    NARCIS (Netherlands)

    Lalbahadoersing, S.; Groenland, J.P.J.; Luitjens, S.B.; Lodder, J.C.

    2002-01-01

    Particulate double-layer tape samples with magnetic underlayers have been investigated by performing magnetic recording measurements and by computer simulation.The presence of soft-magnetic underlayers resulted in decreased signal output and better overwrite behavior. Hard-magnetic underlayers

  15. Surface wave propagation in a double liquid layer over a liquid ...

    Indian Academy of Sciences (India)

    R. Narasimhan (Krishtel eMaging) 1461 1996 Oct 15 13:05:22

    Abstract. The frequency equation is derived for surface waves in a liquid- saturated porous half-space supporting a double layer, that of inhomogeneous and homogeneous liquids. Asymptotic approximations of Bessel functions are used for long and short wavelength cases. Certain other problems are discussed as spe-.

  16. Small amplitude variable charge dust Bernstein-Greene-Kruskal double layers

    Energy Technology Data Exchange (ETDEWEB)

    Amour, Rabia [Plasma Physics Group, Theoretical Physics Laboratory, Faculty of Sciences - Physics, U.S.T.H.B, Bab-Ezzouar, B.P. 32, El Alia, Algiers 16111 (Algeria); Tribeche, Mouloud [Plasma Physics Group, Theoretical Physics Laboratory, Faculty of Sciences - Physics, U.S.T.H.B, Bab-Ezzouar, B.P. 32, El Alia, Algiers 16111 (Algeria)], E-mail: mouloud-tribeche@lycos.com

    2009-05-11

    A first theoretical attempt is made to investigate small amplitude, variable charge dust Bernstein-Greene-Kruskal (BGK) double layers (DLs). The nature of the dust BGK-DLs (compressive or rarefactive), their strength and thickness depend sensitively on the net negative charge residing on the grain surface, the dust grain dynamics and, more interestingly, on the ion-to-electron temperatures ratio.

  17. Small amplitude variable charge dust Bernstein-Greene-Kruskal double layers

    International Nuclear Information System (INIS)

    Amour, Rabia; Tribeche, Mouloud

    2009-01-01

    A first theoretical attempt is made to investigate small amplitude, variable charge dust Bernstein-Greene-Kruskal (BGK) double layers (DLs). The nature of the dust BGK-DLs (compressive or rarefactive), their strength and thickness depend sensitively on the net negative charge residing on the grain surface, the dust grain dynamics and, more interestingly, on the ion-to-electron temperatures ratio.

  18. Ionic diffusion in the double layer at model electrode/molten salt interfaces

    International Nuclear Information System (INIS)

    Tankeshwar, K.; Tosi, M.P.

    1991-08-01

    The anisotropic ionic diffusion coefficients in model electrochemical cells in the molten-salt regime for the electrolyte are evaluated from the ionic density profiles reported in simulation work of Grout and coworkers. A local description of the diffusion processes for counterions and coions in the electrical double layer is obtained from the data. (author). 10 refs, 1 fig., 1 tab

  19. Inorganic layered double hydroxides as a 4-hexyl resorcinol delivery system for topical applications

    CSIR Research Space (South Africa)

    Mosangi, Damodar

    2016-08-01

    Full Text Available In this study, the hydrophobic even skin tone active, 4-hexylresorcinol (HR), was intercalated into a zinc aluminium layered double hydroxide (ZnAl-LDH) by a co-precipitation method and used as a controlled release ingredient in skin care...

  20. Electric-Field-Induced Superconductivity Detected by Magnetization Measurements of an Electric-Double-Layer Capacitor

    NARCIS (Netherlands)

    Kasahara, Yuichi; Nishijima, Takahiro; Sato, Tatsuya; Takeuchi, Yuki; Ye, Jianting; Yuan, Hongtao; Shimotani, Hidekazu; Iwasa, Yoshihiro

    We report evidence for superconductivity induced by the application of strong electric fields onto the surface of a band insulator, ZrNCl, provided by the observation of a shielding diamagnetic signal. We introduced an electric-double-layer capacitor configuration and in situ magnetization

  1. Application of electric double layer capacitor to pulse coil power supply

    International Nuclear Information System (INIS)

    Abe, Keita; Inomoto, Michiaki; Yamada, Takuma; Kamio, Shuji; Sakumura, Morio; Cao, Qinghong; Ono, Yasushi; Kuwahata, Akihiro; Imazawa, Ryota

    2011-01-01

    We developed a new application of the electric double layer capacitor (EDLC) as a sec-order quasi-DC power supply like flying-wheel motor-generators. We constructed the power supply using IGBT switching circuit and successfully demonstrated its initial operation whose current and duration time are 100 A and 3 sec, respectively, indicating a new potential of EDLC. (author)

  2. The electric double layer at high surface potentials: The influence of excess ion polarizability

    NARCIS (Netherlands)

    Hatlo, M. M.; van Roij, R.H.H.G.; Lue, L.

    2012-01-01

    By including the excess ion polarizability into the Poisson-Boltzmann theory, we show that the decrease in differential capacitance with voltage, observed for metal electrodes above a threshold potential, can be understood in terms of thickening of the double layer due to ion-induced polarizability

  3. Electrical double layer at various electrode potentials: A modification by vibration

    Czech Academy of Sciences Publication Activity Database

    Zhan, H.; Červenka, Jiří; Prawer, S.; Garrett, D.J.

    2017-01-01

    Roč. 121, č. 8 (2017), s. 4760-4764 ISSN 1932-7447 Institutional support: RVO:68378271 Keywords : electrical double layer * vibration * high concentration * model Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry Impact factor: 4.536, year: 2016

  4. Electric double layer transistors with ferroelectric BaTiO3 channels

    NARCIS (Netherlands)

    Ito, M.; Matsubara, Y.; Kozuka, Y.; Takahashi, K. S.; Kagawa, F.; Ye, J. T.; Iwasa, Y.; Ueno, K.; Tokura, Y.; Kawasaki, M.

    2014-01-01

    We report the surface conduction of a BaTiO3 thin film using electric double layer transistor (EDLT) structure. A transistor operation was observed at 220 K with an on/off ratio exceeding 10(5), demonstrating that ionic liquid gating is effective to induce carriers at the surface of ferroelectric

  5. Surface wave propagation in a double liquid layer over a liquid ...

    Indian Academy of Sciences (India)

    The frequency equation is derived for surface waves in a liquidsaturated porous half-space supporting a double layer, that of inhomogeneous and homogeneous liquids. Asymptotic approximations of Bessel functions are used for long and short wavelength cases. Certain other problems are discussed as special cases.

  6. Control of sound fields with a circular double-layer array of loudspeakers

    DEFF Research Database (Denmark)

    Chang, Jiho; Jacobsen, Finn

    2012-01-01

    by the Kirchhoff-Helmholtz integral theorem a double-layer array of loudspeakers is used. Several solution methods are suggested and examined with computer simulations: pure contrast control, pure pressure matching, and a weighted combination. In order to compare the performance of the methods two performance...

  7. Sound field separation with a double layer velocity transducer array (L)

    DEFF Research Database (Denmark)

    Fernandez Grande, Efren; Jacobsen, Finn

    2011-01-01

    of the array. The technique has been examined and compared with direct velocity based reconstruction, as well as with a technique based on the measurement of the sound pressure and particle velocity. The double layer velocity method circumvents some of the drawbacks of the pressure-velocity based...

  8. Mg-Al layered double hydroxide intercalated with porphyrin anions: molecular simulations and experiments

    Czech Academy of Sciences Publication Activity Database

    Kovář, P.; Pospíšil, M.; Káfuňková, Eva; Lang, Kamil; Kovanda, F.

    2010-01-01

    Roč. 16, č. 2 (2010), s. 223-233 ISSN 1610-2940 R&D Projects: GA ČR(CZ) GA203/06/1244; GA AV ČR KAN100500651 Institutional research plan: CEZ:AV0Z40320502 Keywords : layered double hydroxide * porphyrin * molecular simulations Subject RIV: CA - Inorganic Chemistry Impact factor: 1.871, year: 2010

  9. Acetyl salicylic acid–ZnAl layered double hydroxide functional nanohybrid for skin care application

    CSIR Research Space (South Africa)

    Mosangi, Damodar

    2016-10-01

    Full Text Available In this study, a pharmaceutically active ingredient, acetyl salicylic acid (ASA), was intercalated into ZnAl layered double hydroxide (LDH). The LDH–ASA nanohybrid material was characterized by XRD, FTIR, SEM, ICP-MS, TEM and TGA. Successful...

  10. Hydrothermal Synthesis and Characterization of 3R Polytypes of Mg-Al Layered Double Hydroxides

    NARCIS (Netherlands)

    Budhysutanto, W.N.

    2010-01-01

    Layered Double Hydroxides (LDH) is a unique group of clays that have an anionic exchange capability. This research explored the hydrothermal method as an alternative method to synthesize Mg-Al LDH. It is a simple and more environmentally friendly compared to the conventional method of

  11. Formation of Layered Double Hydroxides on Alumina Surface in Aqueous Solutions Containing Divalent Metal Cations

    Czech Academy of Sciences Publication Activity Database

    Kovanda, F.; Mašátová, P.; Novotná, P.; Jirátová, Květa

    2009-01-01

    Roč. 57, č. 4 (2009), s. 425-432 ISSN 0009-8604 R&D Projects: GA ČR GA104/07/1400 Institutional research plan: CEZ:AV0Z40720504 Keywords : deposition * layered double hydroxides * supported mixed oxides Subject RIV: CI - Industrial Chemistry, Chemical Engineering Impact factor: 1.431, year: 2009

  12. Facile preparation of layered double hydroxide/MoS{sub 2}/poly(vinyl alcohol) composites

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Keqing, E-mail: zhoukq@cug.edu.cn [Faculty of Engineering, China University of Geosciences (Wuhan), 388 Lumo Road, Wuhan, Hubei, 430074 (China); Hu, Yixin [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China); Liu, Jiajia [State Key Laboratory of Fire Science, University of Science and Technology of China, 96 Jinzhai Road, Hefei, Anhui, 230026 (China); Gui, Zhou, E-mail: zgui@ustc.edu.cn [State Key Laboratory of Fire Science, University of Science and Technology of China, 96 Jinzhai Road, Hefei, Anhui, 230026 (China); Jiang, Saihua [School of Mechanical and Automotive Engineering, South China University of Technology, Wushan Road 381, Guangzhou, 510641 (China); Tang, Gang [School of Architecture and Civil Engineering, Anhui University of Technology, 59 Hudong Road, Ma' anshan, Anhui, 243002 (China)

    2016-08-01

    In present study, the layered double hydroxide/MoS{sub 2} hybrids are facilely synthesized by self-assembly of exfoliated MoS{sub 2} nanosheets and layered double hydroxide nanoplates via electrostatic interaction, with the aim of combining their physical and chemical functionalities to form a promising nanofiller for flame retardancy in polymer composites. The structure and morphology of the layered double hydroxide/MoS{sub 2} hybrids are probed by X-ray diffraction and transmission electron microscopy. Subsequently, the hybrids are incorporated into poly (vinyl alcohol) to serve as reinforcements. The flame retardant efficiency of MoS{sub 2} nanosheets in poly (vinyl alcohol) is significantly enhanced after the incorporation of layered double hydroxide nanoplates, which can be explained by the forming of a compact and uniform char during combustion. - Highlights: • The LDH/MoS{sub 2} hybrids were facilely synthesized by self-assembly method. • The flame retardant efficiency of LDH/MoS{sub 2} hybrids in PVA was significantly enhanced. • It is a promising strategy for improving the flame retardant efficiency of MoS{sub 2}.

  13. Large acoustic solitons and double layers in plasmas with two positive ion species

    International Nuclear Information System (INIS)

    Verheest, Frank; Hellberg, Manfred A.; Saini, Nareshpal Singh; Kourakis, Ioannis

    2011-01-01

    Large nonlinear acoustic waves are discussed in a plasma made up of cold supersonic and adiabatic subsonic positive ions, in the presence of hot isothermal electrons, with the help of Sagdeev pseudopotential theory. In this model, no solitons are found at the acoustic speed, and no compositional parameter ranges exist where solutions of opposite polarities can coexist. All nonlinear modes are thus super-acoustic, but polarity changes are possible. The upper limits on admissible structure velocities come from different physical arguments, in a strict order when the fractional cool ion density is increased: infinite cold ion compression, warm ion sonic point, positive double layers, negative double layers, and finally, positive double layers again. However, not all ranges exist for all mass and temperature ratios. Whereas the cold and warm ion sonic point limitations are always present over a wide range of mass and temperature ratios, and thus positive polarity solutions can easily be obtained, double layers have a more restricted existence range, specially if polarity changes are sought.

  14. Does electrical double layer formation lead to salt exclusion or to uptake?

    NARCIS (Netherlands)

    Lyklema, J.

    2005-01-01

    When electric double layers are formed, cases have been reported where this formation nvolves expulsion of electrolyte into the solution and cases in which electrolyte is absorbed from the solution. Both situations are experimentally and theoretically documented, but they cannot be simultaneously

  15. Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

    Science.gov (United States)

    Hadjichristov, G. B.; Ivanov, Tz E.; Marinov, Y. G.

    2014-12-01

    Being of interest for plastic electronics, ion-beam produced nanostructure, namely silicon ion (Si+) implanted polymethyl-methacrylate (PMMA) with ultrathin nanostructured dielectric (NSD) top layer and nanocomposite (NC) buried layer, is examined by electric measurements. In the proposed field-effect organic nanomaterial structure produced within the PMMA network by ion implantation with low energy (50 keV) Si+ at the fluence of 3.2 × 1016 cm-2 the gate NSD is ion-nanotracks-modified low-conductive surface layer, and the channel NC consists of carbon nanoclusters. In the studied ion-modified PMMA field-effect configuration, the gate NSD and the buried NC are formed as planar layers both with a thickness of about 80 nm. The NC channel of nano-clustered amorphous carbon (that is an organic semiconductor) provides a huge increase in the electrical conduction of the material in the subsurface region, but also modulates the electric field distribution in the drift region. The field effect via the gate NSD is analyzed. The most important performance parameters, such as the charge carrier field-effect mobility and amplification of this particular type of PMMA- based transconductance device with NC n-type channel and gate NSD top layer, are determined.

  16. Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

    Energy Technology Data Exchange (ETDEWEB)

    Fiorentino, Giuseppe, E-mail: g.fiorentino@tudelft.nl; Morana, Bruno [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT Delft (Netherlands); Forte, Salvatore [Department of Electronic, University of Naples Federico II, Piazzale Tecchio, 80125 Napoli (Italy); Sarro, Pasqualina Maria [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT, Delft (Netherlands)

    2015-01-15

    In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

  17. Segregation and Clustering Effects on Complex Boron Redistribution in Strongly Doped Polycrystalline-Silicon Layers

    International Nuclear Information System (INIS)

    Abadli, S.; Mansour, F.

    2011-01-01

    This work deals with the investigation of the complex phenomenon of boron (B) transient enhanced diffusion (TED) in strongly implanted silicon (Si) layers. It concerns the instantaneous influences of the strong B concentrations, the Si layers crystallization, the clustering and the B trapping/segregation during thermal post-implantation annealing. We have used Si thin layers obtained from disilane (Si2H6) by low pressure chemical vapor deposition (LPCVD) and then B implanted with a dose of 4 x 1015 atoms/cm2 at an energy of 15 keV. To avoid long redistributions, thermal annealing was carried out at relatively low-temperatures (700, 750 and 800 'deg'C) for various short-times ranging between 1 and 30 minutes. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of Si-LPCVD layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the TED process in strongly doped Si-LPCVD layers. It was found that boron TED is strongly affected by the simultaneous complex kinetics of clustering, crystallization, trapping and segregation during annealing. The fast formation of small Si-B clusters enhances the B diffusivity whereas the evolution of the clusters and segregation reduce this enhancement. (author)

  18. Interstratified nanohybrid assembled by alternating cationic layered double hydroxide nanosheets and anionic layered titanate nanosheets with superior photocatalytic activity

    International Nuclear Information System (INIS)

    Lin, Bizhou; Sun, Ping; Zhou, Yi; Jiang, Shaofeng; Gao, Bifen; Chen, Yilin

    2014-01-01

    Graphical abstract: - Highlights: • Two kinds of nanosheets are well arranged in a layer-by-layer alternating fashion. • Effective interfacial heterojunction and high specific surface were observed. • Interstratified nanohybrid exhibits a superior photocatalytic activity. - Abstract: Oppositely charged 2D inorganic nanosheets of ZnAl-layered double hydroxide and layered titanate were successfully assembled into an interstratified nanohybrid through simply mixing the corresponding nanosheet suspensions. Powder X-ray diffraction and high-resolution transmission electron microscope clearly revealed that the component nanosheets in the as-obtained nanohybrid ZnAl–Ti 3 O 7 retain the 2D sheet skeletons of the pristine materials and that the two kinds of nanosheets are well arranged in a layer-by-layer alternating fashion with a basal spacing of about 1.3 nm, coincident with the thickness summation of the two component nanosheets. The effective interfacial heterojunction between them and the high specific surface area resulted in that the nanohybrid exhibits a superior photocatalytic activity in the degradation of methylene blue with a reaction constant k of 2.81 × 10 −2 min −1 , which is about 9 and 4 times higher than its precursors H 2 Ti 3 O 7 and ZnAl-LDH, respectively. Based on UV–vis, XPS and photoelectrochemical measurements, a proposed photoexcitation model was provided to understand its photocatalytic behavior

  19. Endodontic treatment and esthetic management of a primary double tooth with direct composite using silicone buildup guide

    Directory of Open Access Journals (Sweden)

    Vinaya Kumar Kulkarni

    2012-01-01

    Full Text Available Gemination and fusion are morphological dental anomalies, characterized by the formation of a clinically wide tooth. Gemination occurs when one tooth bud tries to divide, while fusion occurs if two buds unite. The terms double teeth, double formation, conjoined teeth, geminifusion, vicinifusion and dental twinning are often used to describe fusion and gemination. Double teeth are associated with clinical problems such as poor esthetics, spacing problems and caries susceptibility. Management of such cases requires a comprehensive knowledge of the clinical entity as well as the problems associated with it. This report presents a case of primary double tooth in a 6-year-old boy involving maxillary left central incisor. The anomalous tooth was carious and pulpally involved. This was treated conservatively by endodontic treatment and esthetic rehabilitation was done with direct composite restoration using a silicone buildup guide. The treated tooth was followed up until exfoliation.

  20. Redistribution of erbium during the crystallization of buried amorphous silicon layers

    International Nuclear Information System (INIS)

    Aleksandrov, O.V.; Nikolaev, Yu.A.; Sobolev, N.A.; Sakharov, V.I.; Serenkov, I.T.; Kudryavtsev, Yu.A.

    1999-01-01

    The redistribution of Er during its implantation in silicon at doses close to the amorphization threshold and its subsequent solid-phase epitaxial (SPE) crystallization is investigated. The formation of a buried amorphous (a) layer is discovered at Er doses equal to 5x10 13 and 1x10 14 cm -2 using Rutherford backscattering. The segregation of Er in this case takes place inwardly from the two directions corresponding to the upper and lower boundaries of the buried αlayer and leads to the formation of a concentration peak at the meeting place of the two crystallization fronts. A method for calculating the coordinate dependence of the segregation coefficient k from the distribution profiles of the erbium impurity before and after annealing is proposed. The k(x) curve exhibits a drop, whose width increases with decreasing Er implantation dose. Its appearance is attributed to the nonequilibrium nature of the segregation process at the beginning of SPE crystallization

  1. On determining dead layer and detector thicknesses for a position-sensitive silicon detector

    Science.gov (United States)

    Manfredi, J.; Lee, Jenny; Lynch, W. G.; Niu, C. Y.; Tsang, M. B.; Anderson, C.; Barney, J.; Brown, K. W.; Chajecki, Z.; Chan, K. P.; Chen, G.; Estee, J.; Li, Z.; Pruitt, C.; Rogers, A. M.; Sanetullaev, A.; Setiawan, H.; Showalter, R.; Tsang, C. Y.; Winkelbauer, J. R.; Xiao, Z.; Xu, Z.

    2018-04-01

    In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the "E" detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall thickness of the detector itself. The dead layer thickness for each E detector in HiRA is extracted using a measurement of alpha particles emitted from a 212Pb pin source placed close to the detector surface. This procedure also allows for energy calibrations of the E detectors, which are otherwise inaccessible for alpha source calibration as each one is sandwiched between two other detectors. The E detector thickness is obtained from a combination of elastically scattered protons and an energy-loss calculation method. Results from these analyses agree with values provided by the manufacturer.

  2. The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

    DEFF Research Database (Denmark)

    Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas

    Donor-acceptor co-doped silicon carbide layers are promising light converters for novel monolithic all-semiconductor LEDs due to their broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides appropriate doping concentrations yielding low radiative...... lifetimes, high nonradiative lifetimes are crucial for efficient light conversion. Despite the excellent crystalline quality that can generally be obtained by sublimation epitaxy according to XRD measurements, the role of defects in f-SiC is not yet well understood. Recent results from room temperature...... photoluminescence, charge carrier lifetime measurements by microwave detected photoconductivity and internal quantum efficiency measurements suggest that the internal quantum efficiency of f-SiC layers is significantly affected by the incorporation of defects during epitaxy. Defect formation seems to be related...

  3. Experience with the silicon strip detector of ALICE

    NARCIS (Netherlands)

    Nooren, G.J.L.

    2009-01-01

    The Silicon Strip Detector (SSD) forms the two outermost layers of the ALICE Inner Track- ing System (ITS), connecting the TPC with the inner layers of the ITS. The SSD consists of 1698 double-sided silicon microstrip modules, 95 μm pitch, distributed in two cylindrical bar- rels, whose radii are

  4. Ion acoustic solitons/double layers in two-ion plasma revisited

    International Nuclear Information System (INIS)

    Lakhina, G. S.; Singh, S. V.; Kakad, A. P.

    2014-01-01

    Ion acoustic solitons and double layers are studied in a collisionless plasma consisting of cold heavier ion species, a warm lighter ion species, and hot electrons having Boltzmann distributions by Sagdeev pseudo-potential technique. In contrast to the previous results, no double layers and super-solitons are found when both the heavy and lighter ion species are treated as cold. Only the positive potential solitons are found in this case. When the thermal effects of the lighter ion species are included, in addition to the usual ion-acoustic solitons occurring at M > 1 (where the Mach number, M, is defined as the ratio of the speed of the solitary wave and the ion-acoustic speed considering temperature of hot electrons and mass of the heavier ion species), slow ion-acoustic solitons/double layers are found to occur at low Mach number (M < 1). The slow ion-acoustic mode is actually a new ion-ion hybrid acoustic mode which disappears when the normalized number density of lighter ion species tends to 1 (i.e., no heavier species). An interesting property of the new slow ion-acoustic mode is that at low number density of the lighter ion species, only negative potential solitons/double layers are found whereas for increasing densities there is a transition first to positive solitons/double layers, and then only positive solitons. The model can be easily applicable to the dusty plasmas having positively charged dust grains by replacing the heavier ion species by the dust mass and doing a simple normalization to take account of the dust charge

  5. Characterization and calibration of radiation-damaged double-sided silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kaya, L. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Vogt, A., E-mail: andreas.vogt@ikp.uni-koeln.de [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Reiter, P.; Birkenbach, B.; Hirsch, R.; Arnswald, K.; Hess, H.; Seidlitz, M.; Steinbach, T.; Warr, N.; Wolf, K. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Stahl, C.; Pietralla, N. [Institut für Kernphysik, Technische Universität Darmstadt, D-64291 Darmstadt (Germany); Limböck, T.; Meerholz, K. [Physikalische Chemie, Universität zu Köln, D-50939 Köln (Germany); Lutter, R. [Maier-Leibnitz-Laboratorium, Ludwig-Maximilians-Universität München, D-85748 Garching (Germany)

    2017-05-21

    Double-sided silicon strip detectors (DSSSD) are commonly used for event-by-event identification of charged particles as well as the reconstruction of particle trajectories in nuclear physics experiments with stable and radioactive beams. Intersecting areas of both p- and n-doped front- and back-side segments form individual virtual pixel segments allowing for a high detector granularity. DSSSDs are employed in demanding experimental environments and have to withstand high count rates of impinging nuclei. The illumination of the detector is often not homogeneous. Consequently, radiation damage of the detector is distributed non-uniformly. Position-dependent incomplete charge collection due to radiation damage limits the performance and lifetime of the detectors, the response of different channels may vary drastically. Position-resolved charge-collection losses between front- and back-side segments are investigated in an in-beam experiment and by performing radioactive source measurements. A novel position-resolved calibration method based on mutual consistency of p-side and n-side charges yields a significant enhancement of the energy resolution and the performance of radiation-damaged parts of the detector.

  6. Performance of CMS TOB Silicon Detector Modules on a Double Sided Prototype ROD

    CERN Document Server

    Valls, Juan

    2004-01-01

    In this paper we summarize results of the performance of CMS TOB silicon detector modules mounted on the first assembled double-sided rod at CERN. Results are given in terms of noise, noise occupancies, signal to noise ratios and signal efficiencies. The noise figures from the rod optical setup are compared to the single module setup with electrical read out. Both test setups show a small or negligible common mode noise picked up by the modules. Similar noise results are obtained in both setups after full calibration gain values are applied. We measure total noise values of ~1600 electrons in peak mode and ~2600 electrons in deconvolution mode. Signal to noise ratios of the order of 15 (25) for deconvolution (peak) operation modes are found. The noise occupancies on the modules have important implications for the zero suppression algorithms which the CMS Tracker FEDs will use to reduce t he data volume flowing to the DAQ. The detector signal efficiencies and noise occupancies are also shown as a function of t...

  7. Lithium analysis using a double-sided silicon strip detector at LIBAF

    Science.gov (United States)

    De La Rosa, Nathaly; Kristiansson, Per; Nilsson, E. J. Charlotta; Ros, Linus; Elfman, Mikael; Pallon, Jan

    2017-08-01

    Quantification and mapping possibilities of lithium in geological material, by Nuclear Reaction Analysis (NRA), was evaluated at the Lund Ion Beam Analysis Facility (LIBAF). LiF and two Standard Reference Materials, (SRM 610 and SRM 612) were used in the investigation. The main part of the data was obtained at the beam energy 635 keV studying the high Q-value reaction 7Li(p, α)4He, but reaction yield and detection limits were also briefly investigated as a function of the energy. A double-sided silicon strip detector (DSSSD) was used to detect the α -particles emitted in the reaction in the backward direction. The combination of the high Q-value, a reasonably good cross-section and the possibility to use a high beam current have been demonstrated to allow for measurement of concentrations down below 50 ppm. Proton energies below 800 keV were demonstrated to be appropriate energies for extracting lithium in combination with boron analysis.

  8. Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

    International Nuclear Information System (INIS)

    Wilking, S.; Ebert, S.; Herguth, A.; Hahn, G.

    2013-01-01

    The degradation effect boron doped and oxygen-rich crystalline silicon materials suffer from under illumination can be neutralized in hydrogenated silicon by the application of a regeneration process consisting of a combination of slightly elevated temperature and carrier injection. In this paper, the influence of variations in short high temperature steps on the kinetics of the regeneration process is investigated. It is found that hotter and longer firing steps allowing an effective hydrogenation from a hydrogen-rich silicon nitride passivation layer result in an acceleration of the regeneration process. Additionally, a fast cool down from high temperature to around 550 °C seems to be crucial for a fast regeneration process. It is suggested that high cooling rates suppress hydrogen effusion from the silicon bulk in a temperature range where the hydrogenated passivation layer cannot release hydrogen in considerable amounts. Thus, the hydrogen content of the silicon bulk after the complete high temperature step can be increased resulting in a faster regeneration process. Hence, the data presented here back up the theory that the regeneration process might be a hydrogen passivation of boron-oxygen related defects

  9. Selective deposition contact patterning using atomic layer deposition for the fabrication of crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Cho, Young Joon; Shin, Woong-Chul; Chang, Hyo Sik

    2014-01-01

    Selective deposition contact (SDC) patterning was applied to fabricate the rear side passivation of crystalline silicon (Si) solar cells. By this method, using screen printing for contact patterning and atomic layer deposition for the passivation of Si solar cells with Al 2 O 3 , we produced local contacts without photolithography or any laser-based processes. Passivated emitter and rear-contact solar cells passivated with ozone-based Al 2 O 3 showed, for the SDC process, an up-to-0.7% absolute conversion-efficiency improvement. The results of this experiment indicate that the proposed method is feasible for conversion-efficiency improvement of industrial crystalline Si solar cells. - Highlights: • We propose a local contact formation process. • Local contact forms a screen print and an atomic layer deposited-Al 2 O 3 film. • Ozone-based Al 2 O 3 thin film was selectively deposited onto patterned silicon. • Selective deposition contact patterning method can increase cell-efficiency by 0.7%

  10. First steps towards the realization of a double layer perceptron based on organic memristive devices

    Directory of Open Access Journals (Sweden)

    A. V. Emelyanov

    2016-11-01

    Full Text Available Memristors are widely considered as promising elements for the efficient implementation of synaptic weights in artificial neural networks (ANNs since they are resistors that keep memory of their previous conductive state. Whereas demonstrations of simple neural networks (e.g., a single-layer perceptron based on memristors already exist, the implementation of more complicated networks is more challenging and has yet to be reported. In this study, we demonstrate linearly nonseparable combinational logic classification (XOR logic task using a network implemented with CMOS-based neurons and organic memrisitive devices that constitutes the first step toward the realization of a double layer perceptron. We also show numerically the ability of such network to solve a principally analogue task which cannot be realized by digital devices. The obtained results prove the possibility to create a multilayer ANN based on memristive devices that paves the way for designing a more complex network such as the double layer perceptron.

  11. First steps towards the realization of a double layer perceptron based on organic memristive devices

    Science.gov (United States)

    Emelyanov, A. V.; Lapkin, D. A.; Demin, V. A.; Erokhin, V. V.; Battistoni, S.; Baldi, G.; Dimonte, A.; Korovin, A. N.; Iannotta, S.; Kashkarov, P. K.; Kovalchuk, M. V.

    2016-11-01

    Memristors are widely considered as promising elements for the efficient implementation of synaptic weights in artificial neural networks (ANNs) since they are resistors that keep memory of their previous conductive state. Whereas demonstrations of simple neural networks (e.g., a single-layer perceptron) based on memristors already exist, the implementation of more complicated networks is more challenging and has yet to be reported. In this study, we demonstrate linearly nonseparable combinational logic classification (XOR logic task) using a network implemented with CMOS-based neurons and organic memrisitive devices that constitutes the first step toward the realization of a double layer perceptron. We also show numerically the ability of such network to solve a principally analogue task which cannot be realized by digital devices. The obtained results prove the possibility to create a multilayer ANN based on memristive devices that paves the way for designing a more complex network such as the double layer perceptron.

  12. Acoustic radiation force on a double-layer microsphere by a Gaussian focused beam

    International Nuclear Information System (INIS)

    Wu, Rongrong; Cheng, Kaixuan; Liu, Jiehui; Mao, Yiwei; Gong, Xiufen; Liu, Xiaozhou

    2014-01-01

    A new model for calculating the radiation force on double-layer microsphere is proposed based on the ray acoustics approach. The axial acoustic radiation force resulting from a focused Gaussian beam incident on spherical shells immersed in water is examined theoretically in relation to its thickness and the contents of its double-layer. The attenuation both in the water and inside the sphere is considered in this method, which cannot be ignored while the high frequency ultrasonic is used. Results of numerical calculations are presented for fat and low density polyethylene materials, with the hollow region filled with animal oil, water, or air. These results show how the acoustic impedance and the sound velocity of both layers, together with the thickness of the shell, affect the acoustic radiation force.

  13. Frictional Magneto-Coulomb Drag in Graphene Double-Layer Heterostructures.

    Science.gov (United States)

    Liu, Xiaomeng; Wang, Lei; Fong, Kin Chung; Gao, Yuanda; Maher, Patrick; Watanabe, Kenji; Taniguchi, Takashi; Hone, James; Dean, Cory; Kim, Philip

    2017-08-04

    Coulomb interaction between two closely spaced parallel layers of conductors can generate the frictional drag effect by interlayer Coulomb scattering. Employing graphene double layers separated by few-layer hexagonal boron nitride, we investigate density tunable magneto- and Hall drag under strong magnetic fields. The observed large magnetodrag and Hall-drag signals can be related with Laudau level filling status of the drive and drag layers. We find that the sign and magnitude of the drag resistivity tensor can be quantitatively correlated to the variation of magnetoresistivity tensors in the drive and drag layers, confirming a theoretical formula for magnetodrag in the quantum Hall regime. The observed weak temperature dependence and ∼B^{2} dependence of the magnetodrag are qualitatively explained by Coulomb scattering phase-space argument.

  14. Meissner effect in clean proximity-contact N-S double layer

    International Nuclear Information System (INIS)

    Higashitani, S.; Nagai, K.

    1994-01-01

    The Meissner effect in proximity-contact normal-superconducting (N-S) double layers is discussed in the clean limit. We obtain the quasi-classical Green's function linear in the vector potential such that satisfies the boundary conditions at the layer ends and also at the N-S interface with a finite reflection coefficient R. We find that, when there is no pairing interaction in the normal layer, the diamagnetic current in the normal layer is constant in space, consequently the magnetic field decreases linearly in the normal layer. To compare our theory with experiments, we calculate the screening length and find a good agreement in the temperature dependence with the experiments in the Au-Nb system. (orig.)

  15. Thermal shock behavior of toughened gadolinium zirconate/YSZ double-ceramic-layered thermal barrier coating

    International Nuclear Information System (INIS)

    Zhong, Xinghua; Zhao, Huayu; Zhou, Xiaming; Liu, Chenguang; Wang, Liang; Shao, Fang; Yang, Kai; Tao, Shunyan; Ding, Chuanxian

    2014-01-01

    Highlights: • Gd 2 Zr 2 O 7 /YSZ DCL thermal barrier coating was designed and fabricated. • The Gd 2 Zr 2 O 7 top ceramic layer was toughened by addition of nanostructured 3YSZ. • Remarkable improvement in thermal shock resistance of the DCL coating was achieved. - Abstract: Double-ceramic-layered (DCL) thermal barrier coating system comprising of toughened Gadolinium zirconate (Gd 2 Zr 2 O 7 , GZ) as the top ceramic layer and 4.5 mol% Y 2 O 3 partially-stabilized ZrO 2 (4.5YSZ) as the bottom ceramic layer was fabricated by plasma spraying and thermal shock behavior of the DCL coating was investigated. The GZ top ceramic layer was toughened by addition of nanostructured 3 mol% Y 2 O 3 partially-stabilized ZrO 2 (3YSZ) to improve fracture toughness of the matrix. The thermal shock resistance of the DCL coating was enhanced significantly compared to that of single-ceramic-layered (SCL) GZ-3YSZ composite coating, which is believed to be primarily attributed to the two factors: (i) the increase in fracture toughness of the top ceramic layer by incorporating nanostructured YSZ particles and (ii) the improvement in strain tolerance through the utilization of 4.5YSZ as the bottom ceramic layer. In addition, the failure mechanisms are mainly attributed to the still low fracture toughness of the top ceramic layer and oxidation of the bond-coat

  16. The influence of double nested layer waviness on compression strength of carbon fiber composite materials

    International Nuclear Information System (INIS)

    Khan, Z.M.

    1997-01-01

    As advanced composite materials having superior physical and mechanical properties are being developed, optimization of their production processes in eagerly being sought. One of the most common defect in production of structural composites is layer waviness. Layer waviness is more pronounced in thick section flat and cylindrical laminates that are extensively used in missile casings, submersibles and space platforms. Layer waviness undulates the entire layers of a multidirectional laminate in through-the-thickness direction leading to gross deterioration of its compression strength. This research investigates the influence of multiple layer waviness in a double nest formation on the compression strength of a composite laminate. Different wave fractions of wave 0 degree centigrade layer fabricated in IM/85510-7 carbon - epoxy composite laminate on a steel mold using single step fabrication procedure. The laminate was cured on a heated press according to specific curing cycle. Static compression testing was performed using NASA short block compression fixture on an MTS servo Hydraulic machine. The purpose of these tests was to determine the effects of multiple layer wave regions on the compression strength of composite laminate. The experimental and analytical results revealed that up to about 35% fraction of wave 0 degree layer exceeded 35%. This analysis indicated that the percentage of 0 degree wavy layer may be used to estimate the reduction in compression strength of a composite laminate under restricted conditions. (author)

  17. Synthesis of Zn–Fe layered double hydroxides via an oxidation process and structural analysis of products

    Energy Technology Data Exchange (ETDEWEB)

    Morimoto, Kazuya, E-mail: kazuya.morimoto@aist.go.jp [Institute for Geo-Resources and Environment, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8567 (Japan); Tamura, Kenji [Environmental Remediation Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Anraku, Sohtaro [Graduate School of Engineering, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo 060-8628 (Japan); Sato, Tsutomu [Faculty of Engineering, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo 060-8628 (Japan); Suzuki, Masaya [Institute for Geo-Resources and Environment, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8567 (Japan); Yamada, Hirohisa [Environmental Remediation Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2015-08-15

    The synthesis of Zn–Fe(III) layered double hydroxides was attempted, employing different pathways using either Fe(II) or Fe(III) species together with Zn as the initial reagents. The product derived from the synthesis employing Fe(II) was found to transition to a Zn–Fe(III) layered double hydroxides phase following oxidation process. In contrast, the product obtained with Fe(III) did not contain a layered double hydroxides phase, but rather consisted of simonkolleite and hydrous ferric oxide. It was determined that the valency of the Fe reagent used in the initial synthesis affected the generation of the layered double hydroxides phase. Fe(II) species have ionic radii and electronegativities similar to those of Zn, and therefore are more likely to form trioctahedral hydroxide layers with Zn species. - Graphical abstract: The synthesis of Zn–Fe(III) layered double hydroxides was attempted, employing different pathways using either Fe(II) or Fe(III) species together with Zn as the initial reagents. - Highlights: • Iron valency affected the generation of Zn–Fe layered double hydroxides. • Zn–Fe layered double hydroxides were successfully synthesized using Fe(II). • Fe(II) species were likely to form trioctahedral hydroxide layers with Zn species.

  18. Double-detonation model of type Ia supernovae with a variable helium layer ignition mass

    International Nuclear Information System (INIS)

    Zhou Wei-Hong; Zhao Gang; Wang Bo

    2014-01-01

    Although Type Ia supernovae (SNe Ia) play an important role in the study of cosmology, their progenitors are still poorly understood. Thermonuclear explosions from the helium double-detonation sub-Chandrasekhar mass model have been considered as an alternative method for producing SNe Ia. By adopting the assumption that a double detonation occurs when a He layer with a critical ignition mass accumulates on the surface of a carbon—oxygen white dwarf (CO WD), we perform detailed binary evolution calculations for the He double-detonation model, in which a He layer from a He star accumulates on a CO WD. According to these calculations, we obtain the initial parameter spaces for SNe Ia in the orbital period and secondary mass plane for various initial WD masses. We implement these results into a detailed binary population synthesis approach to calculate SN Ia birthrates and delay times. From this model, the SN Ia birthrate in our Galaxy is ∼0.4 − 1.6 × 10 −3 yr −1 . This indicates that the double-detonation model only produces part of the SNe Ia. The delay times from this model are ∼ 70 – 710 Myr, which contribute to the young population of SNe Ia in the observations. We found that the CO WD + sdB star system CD–30 11223 could produce an SN Ia via the double-detonation model in its future evolution. (research papers)

  19. Effectiveness evaluation of double-layered satellite network with laser and microwave hybrid links based on fuzzy analytic hierarchy process

    Science.gov (United States)

    Zhang, Wei; Rao, Qiaomeng

    2018-01-01

    In order to solve the problem of high speed, large capacity and limited spectrum resources of satellite communication network, a double-layered satellite network with global seamless coverage based on laser and microwave hybrid links is proposed in this paper. By analyzing the characteristics of the double-layered satellite network with laser and microwave hybrid links, an effectiveness evaluation index system for the network is established. And then, the fuzzy analytic hierarchy process, which combines the analytic hierarchy process and the fuzzy comprehensive evaluation theory, is used to evaluate the effectiveness of the double-layered satellite network with laser and microwave hybrid links. Furthermore, the evaluation result of the proposed hybrid link network is obtained by simulation. The effectiveness evaluation process of the proposed double-layered satellite network with laser and microwave hybrid links can help to optimize the design of hybrid link double-layered satellite network and improve the operating efficiency of the satellite system.

  20. Layered double hydroxides/polymer thin films grown by matrix assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R.; Matei, A.; Mitu, B.; Ionita, M.D.; Filipescu, M.; Stokker-Cheregi, F.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest–Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania); Corobea, M.C. [National R. and S. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021, Bucharest (Romania)

    2013-09-30

    Due to their highly tunable properties, layered double hydroxides (LDHs) are an emerging class of the favorably layered crystals used for the preparation of multifunctional polymer/layered crystal nanocomposites. In contrast to cationic clay materials with negatively charge layers, LDHs are the only host lattices with positively charged layers (brucite-like), with interlayer exchangeable anions and intercalated water. In this work, the deposition of thin films of Mg and Al based LDH/polymers nanocomposites by laser techniques is reported. Matrix assisted pulsed laser evaporation was the method used for thin films deposition. The Mg–Al LDHs capability to act as a host for polymers and to produce hybrid LDH/polymer films has been investigated. Polyethylene glycol with different molecular mass compositions and ethylene glycol were used as polymers. The structure and surface morphology of the deposited LDH/polymers films were examined by X-ray diffraction, Fourier transform infra-red spectroscopy, atomic force microscopy and scanning electron microscopy. - Highlights: • Hybrid composites deposited by matrix assisted pulsed laser evaporation (MAPLE). • Mg–Al layered double hydroxides (LDH) and polyethylene glycol (PEG) are used. • Mixtures of PEG1450 and LDH were deposited by MAPLE. • Deposited thin films preserve the properties of the starting material. • The film wettability can be controlled by the amount of PEG.

  1. Pore Pressure Response to Groundwater Fluctuations in Saturated Double-Layered Soil

    Directory of Open Access Journals (Sweden)

    Hongwei Ying

    2015-01-01

    Full Text Available Analytical solutions are developed for one-dimensional consolidation of double-layered saturated soil subjected to groundwater fluctuations. The solutions are derived by an explicit mathematical procedure using Duhamel’s theorem in conjunction with a Fourier series, when groundwater fluctuation is described by a general time-dependent function and assumed to be the pore water pressure variations at the upper boundary. Taking as an example the harmonic groundwater fluctuation, the relevant response of the excess pore water pressure is discussed in detail, and the main influencing factors of the excess pore pressure distribution are analyzed. A dimensionless parameter θ has been introduced because it significantly affects the phase and the amplitude of excess pore pressures. The influences of the coefficients of permeability and compressibility of soil on the excess pore pressure distribution are different and cannot be incorporated into the coefficient of consolidation in double-layered soil. The relative permeability ratio of two clayey soils also plays an important role on the curves of the distributions of the excess pore pressures. The effects of the thickness of the soil layer on the excess pore pressure distribution should be considered together with the dimensionless parameter θ and the permeability and compressibility of the double-layered soil system.

  2. Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

    Science.gov (United States)

    Atiwongsangthong, Narin

    2012-08-01

    The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

  3. Improvement in the photocurrent collection due to enhanced absorption of light by synthesizing staggered layers of silver nanoclusters in silicon

    International Nuclear Information System (INIS)

    Dhoubhadel, Mangal S.; Lakshantha, Wickramaarachchige J.; Rout, Bibhudutta; McDaniel, Floyd D.; Lightbourne, Sherard; D’Souza, Francis

    2015-01-01

    The quest for increased efficiency of solar cells has driven the research in synthesizing photovoltaic cells involving Si based materials. The efficiency of solar cells involving crystalline Si is stalled around 25% for the last decade. Recently Shi et al. had shown that light trapping can be enhanced by fabricating double layers of Ag nanoparticles in silicon based materials. The light trapping is critically important in a photo devices such as solar cells in order to increase light absorption and efficiency. In the present work, we report enhancement in the absorption of light in Ag ion implanted Si substrates. Multiple low energies Ag ions, ranging from ∼80 keV to ∼30 keV, with different fluences ranging from ∼1 × 10 16 to ∼1 × 10 17 atoms/cm 2 were sequentially implanted into commercially available Si (100) substrates followed by post-thermal annealing to create different sizes of Ag nanoclusters (NC) at different depths in the top 100 nm of the Si. The absorbance of light is increased in Ag implanted Si with a significant increase in the current collection in I-V (current-voltage) photo switching measurements. The experimental photovoltaic cells fabricated with the Ag-implanted Si samples were optically characterized under AM (air mass) 1.5 solar radiation conditions (∼1.0 kW/m 2 ). An enhancement in the charge collection were measured in the annealed samples, where prominent Ag NCs were formed in the Si matrix compared to the as-implanted samples with amorphous layers. We believe the enhancement of the photo-current density from the samples with Ag NC is due to the improvement of efficiency of charge collection of e − -h + pairs produced by the incident light

  4. Influence of nonelectrostatic ion-ion interactions on double-layer capacitance

    Science.gov (United States)

    Zhao, Hui

    2012-11-01

    Recently a Poisson-Helmholtz-Boltzmann (PHB) model [Bohinc , Phys. Rev. EPLEEE81539-375510.1103/PhysRevE.85.031130 85, 031130 (2012)] was developed by accounting for solvent-mediated nonelectrostatic ion-ion interactions. Nonelectrostatic interactions are described by a Yukawa-like pair potential. In the present work, we modify the PHB model by adding steric effects (finite ion size) into the free energy to derive governing equations. The modified PHB model is capable of capturing both ion specificity and ion crowding. This modified model is then employed to study the capacitance of the double layer. More specifically, we focus on the influence of nonelectrostatic ion-ion interactions on charging a double layer near a flat surface in the presence of steric effects. We numerically compute the differential capacitance as a function of the voltage under various conditions. At small voltages and low salt concentrations (dilute solution), we find out that the predictions from the modified PHB model are the same as those from the classical Poisson-Boltzmann theory, indicating that nonelectrostatic ion-ion interactions and steric effects are negligible. At moderate voltages, nonelectrostatic ion-ion interactions play an important role in determining the differential capacitance. Generally speaking, nonelectrostatic interactions decrease the capacitance because of additional nonelectrostatic repulsion among excess counterions inside the double layer. However, increasing the voltage gradually favors steric effects, which induce a condensed layer with crowding of counterions near the electrode. Accordingly, the predictions from the modified PHB model collapse onto those computed by the modified Poisson-Boltzmann theory considering steric effects alone. Finally, theoretical predictions are compared and favorably agree with experimental data, in particular, in concentrated solutions, leading one to conclude that the modified PHB model adequately predicts the diffuse

  5. Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

    International Nuclear Information System (INIS)

    Mazzillo, M.; Renna, L.; Costa, N.; Badalà, P.; Sciuto, A.; Mannino, G.

    2016-01-01

    Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun is our primary natural source of UV radiation. The strength of the sun's ultraviolet radiation is expressed as Solar UV Index (UVI). UV-A (320–400 nm) and UV-B (290–320 nm) rays mostly contribute to UVI. UV-B is typically the most destructive form of UV radiation because it has enough energy to cause photochemical damage to cellular DNA. Also overexposure to UV-A rays, although these are less energetic than UV-B photons, has been associated with toughening of the skin, suppression of the immune system, and cataract formation. The use of preventive measures to decrease sunlight UV radiation absorption is fundamental to reduce acute and irreversible health diseases to skin, eyes and immune system. In this perspective UV sensors able to monitor in a monolithic and compact chip the UV Index and relative UV-A and UV-B components of solar spectrum can play a relevant role for prevention, especially in view of the integration of these detectors in close at hand portable devices. Here we present the preliminary results obtained on our UV-A sensor technology based on the use of hydrogenated Silicon Nitride (SiN:H) thin passivating layers deposited on the surface of thin continuous metal film Ni 2 Si/4H-SiC Schottky detectors, already used for UV-Index monitoring. The first UV-A detector prototypes exhibit a very low leakage current density of about 0.2 pA/mm 2 and a peak responsivity value of 0.027 A/W at 330 nm, both measured at 0V bias.

  6. The Comparison of Engineering Properties Between Single and Double Layer Porous Asphalt made of Packing Gradation

    Directory of Open Access Journals (Sweden)

    Hardiman M. Y

    2008-01-01

    Full Text Available is paper presents the comparison of engineering properties between single and double layer porous asphalt (SLPA and DLPA made of packing gradation. Three nominal maximum aggregate sizes (NMAS were tested each made up of 10, 14, and 20 mm for SLPA. While for the DLPA with 30, 20, and 15 mm top layer are made of 10 and 14 mm NMAS, with a base layer of 20 mm NMAS. Total thickness of all mixes is 70 mm. Binders used are 60/70 penetration base bitumen and polymer binder styrene-butadiene-styrene (SBS. The result shows that the properties of SLPA mix namely permeability and resistance to abrasion loss decreases when the NMAS in SLPA decreases. The abrasion loss of DLPA mixes increases when the porous asphalt top layer thickness decreases, while drainage time value decreases. However, SLPA with 20 mm NMAS exhibits higher abrasion loss compared to all DLPA mixes.

  7. AA stacking, tribological and electronic properties of double-layer graphene with krypton spacer.

    Science.gov (United States)

    Popov, Andrey M; Lebedeva, Irina V; Knizhnik, Andrey A; Lozovik, Yurii E; Potapkin, Boris V; Poklonski, Nikolai A; Siahlo, Andrei I; Vyrko, Sergey A

    2013-10-21

    Structural, energetic, and tribological characteristics of double-layer graphene with commensurate and incommensurate krypton spacers of nearly monolayer coverage are studied within the van der Waals-corrected density functional theory. It is shown that when the spacer is in the commensurate phase, the graphene layers have the AA stacking. For this phase, the barriers to relative in-plane translational and rotational motion and the shear mode frequency of the graphene layers are calculated. For the incommensurate phase, both of the barriers are found to be negligibly small. A considerable change of tunneling conductance between the graphene layers separated by the commensurate krypton spacer at their relative subangstrom displacement is revealed by the use of the Bardeen method. The possibility of nanoelectromechanical systems based on the studied tribological and electronic properties of the considered heterostructures is discussed.

  8. A polygonal double-layer coil design for high-efficiency wireless power transfer

    Science.gov (United States)

    Mao, Shitong; Wang, Hao; Mao, Zhi-Hong; Sun, Mingui

    2018-05-01

    In this work, we present a novel coil structure for the design of Wireless Power Transfer (WPT) systems via magnetic resonant coupling. The new coil consists of two layers of flat polygonal windings in square, pentagonal and hexagonal shapes. The double-layer coil can be conveniently fabricated using the print circuit broad (PCB) technology. In our design, we include an angle between the two layers which can be adjusted to change the area of inter-layer overlap. This unique structure is thoroughly investigated with respect to the quality factor Q and the power transfer efficiency (PTE) using the finite element method (FEM). An equivalent circuit is derived and used to explain the properties of the angularly shifted double-layer coil theoretically. Comparative experiments are conducted from which the performance of the new coil is evaluated quantitatively. Our results have shown that an increased shift angle improves the Q-factor, and the optimal PTE is achieved when the angle reaches the maximum. When compared to the pentagonal and hexagonal coils, the square coil achieves the highest PTE due to its lowest parasitic capacitive effects. In summary, our new coil design improves the performance of WPT systems and allows a formal design procedure for optimization in a given application.

  9. Numerical Well Testing Interpretation Model and Applications in Crossflow Double-Layer Reservoirs by Polymer Flooding

    Directory of Open Access Journals (Sweden)

    Haiyang Yu

    2014-01-01

    Full Text Available This work presents numerical well testing interpretation model and analysis techniques to evaluate formation by using pressure transient data acquired with logging tools in crossflow double-layer reservoirs by polymer flooding. A well testing model is established based on rheology experiments and by considering shear, diffusion, convection, inaccessible pore volume (IPV, permeability reduction, wellbore storage effect, and skin factors. The type curves were then developed based on this model, and parameter sensitivity is analyzed. Our research shows that the type curves have five segments with different flow status: (I wellbore storage section, (II intermediate flow section (transient section, (III mid-radial flow section, (IV crossflow section (from low permeability layer to high permeability layer, and (V systematic radial flow section. The polymer flooding field tests prove that our model can accurately determine formation parameters in crossflow double-layer reservoirs by polymer flooding. Moreover, formation damage caused by polymer flooding can also be evaluated by comparison of the interpreted permeability with initial layered permeability before polymer flooding. Comparison of the analysis of numerical solution based on flow mechanism with observed polymer flooding field test data highlights the potential for the application of this interpretation method in formation evaluation and enhanced oil recovery (EOR.

  10. Reconstruction Effects on Surface Properties of Co/Mg/Al Layered Double Hydroxide

    Directory of Open Access Journals (Sweden)

    Denis SOKOL

    2017-08-01

    Full Text Available Layered double hydroxides having different cationic (Mg2+, Co2+, Al3+ composition were successfully synthesized by the low supersaturation method. The samples were thermally decomposed and reconstructed using water and nitrate media at different temperatures. X-ray powder diffraction analysis, X-ray fluorescence analysis, thermogravimetry and BET/BJH methods were used to investigate the differences between the directly obtained layered materials and those after the reconstruction process.DOI: http://dx.doi.org/10.5755/j01.ms.23.2.15184

  11. Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide

    International Nuclear Information System (INIS)

    Au, V; Charles, C; Boswell, R W

    2006-01-01

    The stress in a single-layer continuous deposition of amorphous silicon dioxide (SiO 2 ) film is compared with the stress within multiple-layer intermittent or 'stop-start' depositions. The films were deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) to a 1 μm total film thickness. The relationships for stress as a function of film thickness for single, two, four and eight layer depositions have been obtained by employing the substrate curvature technique on a post-deposition etch-back of the SiO 2 film. At film thicknesses of less than 300 nm, the stress-thickness relationships clearly show an increase in stress in the multiple-layer samples compared with the relationship for the single-layer film. By comparison, there is little variation in the film stress between the samples when it is measured at 1 μm film thickness. Localized variations in stress were not observed in the regions where the 'stop-start' depositions occurred. The experimental results are interpreted as a possible indication of the presence of unstable, strained Si-O-Si bonds in the amorphous SiO 2 film. It is proposed that the subsequent introduction of a 'stop-start' deposition process places additional strain on these bonds to affect the film structure. The experimental stress-thickness relationships were reproduced independently by assuming a linear relationship between the measured bow and film thickness. The constants of the linear model are interpreted as an indication of the density of the amorphous film structure

  12. The H1 silicon vertex detector

    International Nuclear Information System (INIS)

    Pitzl, D.; Behnke, O.; Biddulph, M.; Boesiger, K.; Eichler, R.; Erdmann, W.; Gabathuler, K.; Gassner, J.; Haynes, W.J..; Horisberger, R.; Kausch, M.; Lindstroem, M.; Niggli, H.; Noyes, G.; Pollet, P.; Steiner, S.; Streuli, S.; Szeker, K.; Truoel, P.

    2000-01-01

    The design, construction and performance of the H1 silicon vertex detector is described. It consists of two cylindrical layers of double-sided, double-metal silicon sensors read out by a custom designed analog pipeline chip. The analog signals are transmitted by optical fibres to a custom-designed ADC board and are reduced on PowerPC processors. Details of the design and construction are given and performance figures from the first data-taking periods are presented

  13. Effect of laser pulsed radiation on the properties of implanted layers of silicon carbide

    International Nuclear Information System (INIS)

    Violin, Eh.E.; Voron'ko, O.N.; Nojbert, F.; Potapov, E.N.

    1984-01-01

    Results are presented of investigation into pulsed laser radiation effects on the layers of GH polytype silicon carbide converted to amorphous state by implantation of boron and aluminium ions. The implantation doses were selected to be 5x10 16 for boron and 5x10 15 cm -2 for aluminium, with the ion energies being 60 and 80 keV, respectively. The samples annealed under nanosecond regime are stated to posseys neither photoluminescence (PL) nor cathodoluminescence (CL). At the same time the layers annealed in millisecond regime have a weak PL at 100 K and CL at 300 K. The PL and CL are observed in samples, laser-annealed at radiation energy density above 150-160 J/cm 2 in case of boron ion implantation and 100-120 J/cm 2 in case of aluminium ion implantation. Increasing the radiation energy density under the nanosecond regime of laser annealing results in the surface evaporation due to superheating of amorphous layers. Increasing the energy density above 220-240 J/cm 2 results in destruction of the samples

  14. Synthesis and carbon dioxide sorption of layered double hydroxide/silica foam nanocomposites with hierarchical mesostructure

    KAUST Repository

    Fu, Liling; Qi, Genggeng; Shekhah, Osama; Belmabkhout, Youssef; Esté vez, Luis Antonio; Eddaoudi, Mohamed; Giannelis, Emmanuel P.

    2014-01-01

    Layered double hydroxides (LDHs) with a hierarchical mesostructure are successfully synthesized on mesoporous silica foams by simple impregnation and hydrothermal treatment. The as-synthesized LDH/silica foam nanocomposites show well-defined mesostructures with high surface areas, large pore volumes, and mesopores of 6-7 nm. The nanocomposites act as carbon dioxide (CO2) sorbents under simulated flue gas conditions. They also exhibit significantly enhanced CO2 capacities under high-pressure conditions and high CO2/N2 and CO2/CH4 selectivities. Respect the hierarchy: Hierarchical mesoporous layered double hydroxide (LDH) nanocomposites with high surface areas and large pore volumes are synthesized by controlled hydrothermal growth of LDH precursors on a mesoporous silica foam. The as-synthesized nanocomposites exhibit a significantly enhanced capacity and selectivity towards carbon dioxide, making them very promising candidates for carbon dioxide (CO2) separation applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Strategy for improved frequency response of electric double-layer capacitors

    Science.gov (United States)

    Wada, Yoshifumi; Pu, Jiang; Takenobu, Taishi

    2015-10-01

    We propose a strategy for improving the response speed of electric double-layer capacitors (EDLCs) and electric double-layer transistors (EDLTs), based on an asymmetric structure with differently sized active materials and gate electrodes. We validate the strategy analytically by a classical calculation and experimentally by fabricating EDLCs with asymmetric Au electrodes (1:50 area ratio and 7.5 μm gap distance). The performance of the EDLCs is compared with that of conventional symmetric EDLCs. Our strategy dramatically improved the cut-off frequency from 14 to 93 kHz and this improvement is explained by fast charging of smaller electrodes. Therefore, this approach is particularly suitable to EDLTs, potentially expanding the applicability to medium speed (kHz-MHz) devices.

  16. Anion-exchange membranes derived from quaternized polysulfone and exfoliated layered double hydroxide for fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wan; Liang, Na; Peng, Pai; Qu, Rong; Chen, Dongzhi; Zhang, Hongwei, E-mail: hanqiujiang@163.com

    2017-02-15

    Layered double hydroxides (LDH) are prepared by controlling urea assisted homogeneous precipitation conditions. Morphology and crystallinity of LDHs are confirmed by X-ray diffraction and scanning electron microscope. After LDHs are incorporated into quaternized polysulfone membranes, transmission electron microscope is used to observe the exfoliated morphology of LDH sheets in the membranes. The properties of the nanocomposite membranes, including water uptake, swelling ratio, mechanical property and ionic conductivity are investigated. The nanocomposite membrane containing 5% LDH sheets shows more balanced performances, exhibiting an ionic conductivity of 2.36×10{sup −2} S cm{sup −1} at 60 °C. - Graphical abstract: Anion-exchange membrane based on quaternized polysulfone and exfoliated layered double hydroxide is optically transparent and has good ionic properties.

  17. Synthesis and carbon dioxide sorption of layered double hydroxide/silica foam nanocomposites with hierarchical mesostructure

    KAUST Repository

    Fu, Liling

    2014-03-05

    Layered double hydroxides (LDHs) with a hierarchical mesostructure are successfully synthesized on mesoporous silica foams by simple impregnation and hydrothermal treatment. The as-synthesized LDH/silica foam nanocomposites show well-defined mesostructures with high surface areas, large pore volumes, and mesopores of 6-7 nm. The nanocomposites act as carbon dioxide (CO2) sorbents under simulated flue gas conditions. They also exhibit significantly enhanced CO2 capacities under high-pressure conditions and high CO2/N2 and CO2/CH4 selectivities. Respect the hierarchy: Hierarchical mesoporous layered double hydroxide (LDH) nanocomposites with high surface areas and large pore volumes are synthesized by controlled hydrothermal growth of LDH precursors on a mesoporous silica foam. The as-synthesized nanocomposites exhibit a significantly enhanced capacity and selectivity towards carbon dioxide, making them very promising candidates for carbon dioxide (CO2) separation applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Synthesis and properties of Mg2Al layered double hydroxides containing 5-fluorouracil

    International Nuclear Information System (INIS)

    Wang Zhongliang; Wang Enbo; Gao Lei; Xu Lin

    2005-01-01

    A pharmaceutically active compound, 5-fluorouracil (5-FU) has been firstly intercalated into layered double hydroxide with the restructure method. Powder X-ray diffraction and spectroscopic analysis indicate that 5-FU molecule is stabilized in the host interlayer by electrostatic interaction and intermolecular interaction, and that the orientation of 5-FU is different when changing the pattern of aging treatment or the swelling agent. The release studies show that a rapid release of the drug during the first 40min is followed by a more sustained one, and that the total amount of drug released from hybrid material into the aqueous solution is almost 87% and 74% at pH 4 and 7, respectively. The studies mentioned above suggest that layered double hydroxide might be used as the basis of a tunable drug delivery carrier

  19. Volume ignition of laser driven fusion pellets and double layer effects

    International Nuclear Information System (INIS)

    Cicchitelli, L.; Eliezer, S.; Goldsworthy, M.P.; Green, F.; Hora, H.; Ray, P.S.; Stening, R.J.; Szichman, H.

    1988-01-01

    The realization of an ideal volume compression of laser-irradiated fusion pellets opens the possibility for an alternative to spark ignition proposed for many years for inertial confinement fusion. A re-evaluation of the difficulties of the central spark ignition of laser driven pellets is given. The alternative volume compression theory, together with volume burn and volume ignition, have received less attention and are re-evaluated in view of the experimental verification generalized fusion gain formulas, and the variation of optimum temperatures derived at self-ignition. Reactor-level DT fusion with MJ-laser pulses and volume compression to 50 times the solid-state density are estimated. Dynamic electric fields and double layers at the surface and in the interior of plasmas result in new phenomena for the acceleration of thermal electrons to suprathermal electrons. Double layers also cause a surface tension which stabilizes against surface wave effects and Rayleigh-Taylor instabilities. (author)

  20. Poly I-lactide-layered double hydroxide nanocomposites via in situ polymerization of I-lactide

    DEFF Research Database (Denmark)

    Katiyar, Vimal; Gerds, N.; Koch, C.B.

    2010-01-01

    The use of clay nanofillers offers a potential route to improved barrier properties in polylactide films. Magnesium–aluminium layered double hydroxides (LDHs) are interesting in this respect and we therefore explored synthesis of PLA-LDH nanocomposites by ring-opening polymerization. This method ...... weight was significantly reduced when in-situ polymerization was conducted in the presence of the LDHs and we suggest that chain termination via LDH surface hydroxyl groups and/or metal-catalyzed degradation could be responsible.......The use of clay nanofillers offers a potential route to improved barrier properties in polylactide films. Magnesium–aluminium layered double hydroxides (LDHs) are interesting in this respect and we therefore explored synthesis of PLA-LDH nanocomposites by ring-opening polymerization. This method...