Control system for a superconducting rectifier using a microcomputer

International Nuclear Information System (INIS)

ten Kate, H.H.J.; Kamphuis, D.A.; Caspari, M.; van de Klundert, L.J.M.; Houkes, Z.

1981-01-01

Within the scope of a research program of superconducting rectifiers software is being developed to take care of the control of such systems. The hardware architecture which interferes with the in and output signals is based on a LSI-11/2 microprocessor with sufficient mass storage for data logging, console and printer. The flexibility inherent to this hardware configuration is desired for optimization of the rectifier concerning maximum current, power, efficiency and quench stability. The paper describes the structure of the program and the interaction between both computer hardware and software and the superconducting rectifier. However, because the reliability of computer systems is unsatisfactory, an additional hardware protection system still handles the most important alarms. 2 refs

Fully controlled 5-phase, 10-pulse, line commutated rectifier

Directory of Open Access Journals (Sweden)

Mahmoud I. Masoud

2015-12-01

Full Text Available The development and production of multiphase machines either generators or motors, specially five-phase, offers improved performance compared to three-phase counterpart. Five phase generators could generate power in applications such as, but not limited to, wind power generation, electric vehicles, aerospace, and oil and gas. The five-phase generator output requires converter system such as ac–dc converters. In this paper, a fully controlled 10-pulse line commutated rectifier, suitable to be engaged with wind energy applications, fed from five-phase source is introduced. A shunt active power filter (APF is used to improve power factor and supply current total harmonic distortion (THD. Compared to three-phase converters, 6-pulse or 12-pulse rectifiers, the 10-pulse rectifier engaged with 5-phase source alleviate their drawbacks such as high dc ripples and no need for electric gear or phase shifting transformer. MATLAB/SIMULINK platform is used as a simulation tool to investigate the performance of the proposed rectifier.

Comparison of thyristor rectifier characteristics with different gate control systems

International Nuclear Information System (INIS)

Gula, V.; Cherepakhin, A.A.

1982-01-01

Some thyristor gate control systems both synchronous and nonsynchronous ones are described. The experimental results of supply voltage asymmetry influence on spectral contents of rectified. output voltage are quoted. Dynamic and frequency responses of these systems are investigated too. Results of comparison of the spectral content of 100 Hz subharmonic of rectified voltage on loading current showed the advantage of the systems with feedback [ru

Rectifier Current Control for an LLC Resonant Converter Based on a Simplified Linearized Model

OpenAIRE

Zhijian Fang; Junhua Wang; Shanxu Duan; Liangle Xiao; Guozheng Hu; Qisheng Liu

2018-01-01

In this paper, a rectifier current control for an LLC resonant converter is proposed, based on a simplified, two-order, linearized model that adds a rectifier current feedback inner loop to improve dynamic performance. Compared to the traditional large-signal model with seven resonant states, this paper utilizes a rectifier current state to represent the characteristics of the resonant states, simplifying the LLC resonant model from seven orders to two orders. Then, the rectifier current feed...

Modeling and control of three phase rectifier with electronic smoothing inductor

DEFF Research Database (Denmark)

Singh, Yash Veer; Rasmussen, Peter Omand; Andersen, Torben Ole

2011-01-01

This paper presents a simple, direct method for deriving the approximate, small-signal, average model and control strategy for three-phase diode bridge rectifier operating with electronic smoothing technique. Electronic smoothing inductor (ESI) performs the function of an inductor that has...... controlled variable impedance. This increases power factor (PF) and reduces total harmonic distortions (THDs) in mains current. The ESI based rectifier enables compact and cost effective design of three phase electric drive as size of passive components is reduced significantly. In order to carry out...

Rectifier Current Control for an LLC Resonant Converter Based on a Simplified Linearized Model

Directory of Open Access Journals (Sweden)

Zhijian Fang

2018-03-01

Full Text Available In this paper, a rectifier current control for an LLC resonant converter is proposed, based on a simplified, two-order, linearized model that adds a rectifier current feedback inner loop to improve dynamic performance. Compared to the traditional large-signal model with seven resonant states, this paper utilizes a rectifier current state to represent the characteristics of the resonant states, simplifying the LLC resonant model from seven orders to two orders. Then, the rectifier current feedback inner loop is proposed to increase the control system damping, improving dynamic performance. The modeling and design methodology for the LLC resonant converter are also presented in this paper. A frequency analysis is conducted to verify the accuracy of the simplified model. Finally, a 200 W LLC resonant converter prototype is built to verify the effectiveness of the proposed control strategy. Compared to a traditional single-loop controller, the settling time and voltage droop were reduced from 10.8 ms to 8.6 ms and from 6.8 V to 4.8 V, respectively, using the proposed control strategy.

Predictive Duty Cycle Control of Three-Phase Active-Front-End Rectifiers

DEFF Research Database (Denmark)

Song, Zhanfeng; Tian, Yanjun; Chen, Wei

2016-01-01

This paper proposed an on-line optimizing duty cycle control approach for three-phase active-front-end rectifiers, aiming to obtain the optimal control actions under different operating conditions. Similar to finite control set model predictive control strategy, a cost function previously...

Designing single phase Current-Programmed-Controlled rectifiers by harmonic currents

DEFF Research Database (Denmark)

Andersen, Gert Karmisholt; Blaabjerg, Frede

2002-01-01

The grid current harmonics of a Current-Programmed-Controlled (CPC) pfc rectifier strongly depends on the choice of switching frequency and switching inductance. This paper describes a new simple and vert fast method to calculate the grid current of a CPC controlled pfc converter. The method...

Modelling a single phase voltage controlled rectifier using Laplace transforms

Science.gov (United States)

Kraft, L. Alan; Kankam, M. David

1992-01-01

The development of a 20 kHz, AC power system by NASA for large space projects has spurred a need to develop models for the equipment which will be used on these single phase systems. To date, models for the AC source (i.e., inverters) have been developed. It is the intent of this paper to develop a method to model the single phase voltage controlled rectifiers which will be attached to the AC power grid as an interface for connected loads. A modified version of EPRI's HARMFLO program is used as the shell for these models. The results obtained from the model developed in this paper are quite adequate for the analysis of problems such as voltage resonance. The unique technique presented in this paper uses the Laplace transforms to determine the harmonic content of the load current of the rectifier rather than a curve fitting technique. Laplace transforms yield the coefficient of the differential equations which model the line current to the rectifier directly.

Countermeasures for electrolytic corrosion - Part II: Implementation of a rapid potential-controlled rectifier

Energy Technology Data Exchange (ETDEWEB)

Ha, Tae-Hyun; Kim, Dae-Kyeong; Lee, Hyun-Goo; Ha, Yoon-Cheol; Bae, Jeong-Hyo [Underground Systems Group, Korea Electrotechnology Research Institute, 28-1 Sungju-dong, Changwon, 641-120 (Korea)

2004-07-01

In electrolytic interference circumstances such as underground pipelines in the vicinity of DC electrified railroads, drainage method or impressed current cathodic protection method has been widely used as a countermeasure for the electrolytic corrosion. In the former method, forced or polarized drainage is commonly adopted and in the latter, the phase-controlled rectifier with thyristor is in common use. Both methods, however, does not show as the optimal measure for the integrity of the pipeline, since the pipe-to-soil potential fluctuates highly positive to the cathodic protection criterion. In particular, as the potential of the pipeline near the railroad varies rapidly, a new rapidly responding countermeasure is necessary. In this paper, we introduce a new rapid potential controlled rectifier and report the result in field tests. Comparison with the existing forced drainage method is also made. The pipe-to-soil potential data show the effectiveness of the rapid potential-controlled rectifier. (authors)

An Integrated Power-Efficient Active Rectifier With Offset-Controlled High Speed Comparators for Inductively Powered Applications

Science.gov (United States)

Lee, Hyung-Min; Ghovanloo, Maysam

2011-01-01

We present an active full-wave rectifier with offset-controlled high speed comparators in standard CMOS that provides high power conversion efficiency (PCE) in high frequency (HF) range for inductively powered devices. This rectifier provides much lower dropout voltage and far better PCE compared to the passive on-chip or off-chip rectifiers. The built-in offset-control functions in the comparators compensate for both turn-on and turn-off delays in the main rectifying switches, thus maximizing the forward current delivered to the load and minimizing the back current to improve the PCE. We have fabricated this active rectifier in a 0.5-μm 3M2P standard CMOS process, occupying 0.18 mm2 of chip area. With 3.8 V peak ac input at 13.56 MHz, the rectifier provides 3.12 V dc output to a 500 Ω load, resulting in the PCE of 80.2%, which is the highest measured at this frequency. In addition, overvoltage protection (OVP) as safety measure and built-in back telemetry capabilities have been incorporated in our design using detuning and load shift keying (LSK) techniques, respectively, and tested. PMID:22174666

Stability analysis of direct current control in current source rectifier

DEFF Research Database (Denmark)

Lu, Dapeng; Wang, Xiongfei; Blaabjerg, Frede

2017-01-01

Current source rectifier with high switching frequency has a great potential for improving the power efficiency and power density in ac-dc power conversion. This paper analyzes the stability of direct current control based on the time delay effect. Small signal model including dynamic behaviors...

Solid state circuit controls direction, speed, and braking of dc motor

Science.gov (United States)

Hanna, M. F.

1966-01-01

Full-wave bridge rectifier circuit controls the direction, speed, and braking of a dc motor. Gating in the circuit of Silicon Controlled Rectifiers /SCRS/ controls output polarity and braking is provided by an SCR that is gated to short circuit the reverse voltage generated by reversal of motor rotation.

Direct Power Control for Three-Phase Two-Level Voltage-Source Rectifiers Based on Extended-State Observation

DEFF Research Database (Denmark)

Song, Zhanfeng; Tian, Yanjun; Yan, Zhuo

2016-01-01

This paper proposed a direct power control strategy for three-phase two-level voltage-source rectifiers based on extended-state observation. Active and reactive powers are directly regulated in the stationary reference frame. Similar to the family of predictive controllers whose inherent characte......This paper proposed a direct power control strategy for three-phase two-level voltage-source rectifiers based on extended-state observation. Active and reactive powers are directly regulated in the stationary reference frame. Similar to the family of predictive controllers whose inherent...

Co-Design Method and Wafer-Level Packaging Technique of Thin-Film Flexible Antenna and Silicon CMOS Rectifier Chips for Wireless-Powered Neural Interface Systems

Directory of Open Access Journals (Sweden)

Kenji Okabe

2015-12-01

Full Text Available In this paper, a co-design method and a wafer-level packaging technique of a flexible antenna and a CMOS rectifier chip for use in a small-sized implantable system on the brain surface are proposed. The proposed co-design method optimizes the system architecture, and can help avoid the use of external matching components, resulting in the realization of a small-size system. In addition, the technique employed to assemble a silicon large-scale integration (LSI chip on the very thin parylene film (5 μm enables the integration of the rectifier circuits and the flexible antenna (rectenna. In the demonstration of wireless power transmission (WPT, the fabricated flexible rectenna achieved a maximum efficiency of 0.497% with a distance of 3 cm between antennas. In addition, WPT with radio waves allows a misalignment of 185% against antenna size, implying that the misalignment has a less effect on the WPT characteristics compared with electromagnetic induction.

Co-Design Method and Wafer-Level Packaging Technique of Thin-Film Flexible Antenna and Silicon CMOS Rectifier Chips for Wireless-Powered Neural Interface Systems.

Science.gov (United States)

Okabe, Kenji; Jeewan, Horagodage Prabhath; Yamagiwa, Shota; Kawano, Takeshi; Ishida, Makoto; Akita, Ippei

2015-12-16

In this paper, a co-design method and a wafer-level packaging technique of a flexible antenna and a CMOS rectifier chip for use in a small-sized implantable system on the brain surface are proposed. The proposed co-design method optimizes the system architecture, and can help avoid the use of external matching components, resulting in the realization of a small-size system. In addition, the technique employed to assemble a silicon large-scale integration (LSI) chip on the very thin parylene film (5 μm) enables the integration of the rectifier circuits and the flexible antenna (rectenna). In the demonstration of wireless power transmission (WPT), the fabricated flexible rectenna achieved a maximum efficiency of 0.497% with a distance of 3 cm between antennas. In addition, WPT with radio waves allows a misalignment of 185% against antenna size, implying that the misalignment has a less effect on the WPT characteristics compared with electromagnetic induction.

High-performance digital triggering system for phase-controlled rectifiers

International Nuclear Information System (INIS)

Olsen, R.E.

1983-01-01

The larger power supplies used to power accelerator magnets are most commonly polyphase rectifiers using phase control. While this method is capable of handling impressive amounts of power, it suffers from one serious disadvantage, namely that of subharmonic ripple. Since the stability of the stored beam depends to a considerable extent on the regulation of the current in the bending magnets, subharmonic ripple, especially that of low frequency, can have a detrimental effect. At the NSLS, we have constructed a 12-pulse, phase control system using digital signal processing techniques that essentially eliminates subharmonic ripple

Analysis of Three-Phase Rectifier Systems with Controlled DC-Link Current Under Unbalanced Grids

DEFF Research Database (Denmark)

Kumar, Dinesh; Davari, Pooya; Zare, Firuz

2017-01-01

Voltage unbalance is the most common disturbance in distribution networks, which give undesirable effects on many grid connected power electronics systems including Adjustable Speed Drive (ASD). Severe voltage unbalance can force three-phase rectifiers into almost single-phase operation, which...... degrades the grid power quality and also imposes a significant negative impact on the ASD system. This major power quality issue affecting the conventional rectifiers can be attenuated by controlling the DC-link current based on an Electronic Inductor (EI) technique. The purpose of this digest...... is to analyze and compare the performance of an EI with a conventional three-phase rectifier under unbalanced grid conditions. Experimental and simulation results validate the proposed mathematical modelling. Further analysis and benchmarking will be provided in the final paper....

A two-phase full-wave superconducting rectifier

International Nuclear Information System (INIS)

Ariga, T.; Ishiyama, A.

1989-01-01

A two-phase full-wave superconducting rectifier has been developed as a small cryogenic power supply of superconducting magnets for magnetically levitation trains. Those magnets are operated in the persistent current mode. However, small ohmic loss caused at resistive joints and ac loss induced by the vibration of the train cannot be avoided. Therefore, the low-power cryogenic power supply is required to compensate for the reduction in magnet current. The presented superconducting rectifier consists of two identical full-wave rectifiers connected in series. Main components of each rectifier are a troidal shape superconducting set-up transformer and two thermally controlled switches. The test results using a 47.5 mH load magnet at 0.2 Hz and 0.5 Hz operations are described. To estimate the characteristics of the superconducting rectifier, the authors have developed a simulation code. From the experiments and the simulations, the transfer efficiency is examined. Furthermore, the optimal design of thermally controlled switches based on the finite element analysis is also discussed

Impedance-based Analysis of DC Link Control in Voltage Source Rectifiers

DEFF Research Database (Denmark)

Lu, Dapeng; Wang, Xiongfei; Blaabjerg, Frede

2018-01-01

This paper analyzes the dynamics influences of the outer dc link control in the voltage source rectifiers based on the impedance model. The ac-dc interactions are firstly presented by means of full order small signal model in dq frame, which shows the input voltage and load condition are the two...

DC Motor Drive with PFC Rectifier

Directory of Open Access Journals (Sweden)

Lascu Mihaela

2008-05-01

Full Text Available The goal of this work is to study theperformances of a hybrid controller used to controlDC Motor drive with a single-phase power factorcorrection rectifier. This study is made usingcomputer simulation (Simulink. The first part isdevoted to the control system of the DC Motors. Inthe second part, the design of the hybrid controllerwill be presented. The third part is the design ofthe fast response single-phase boost power factorcorrection rectifier. The last parts are devoted tosimulation and experimental results.

Experimental investigation of radiative thermal rectifier using vanadium dioxide

Energy Technology Data Exchange (ETDEWEB)

Ito, Kota, E-mail: kotaito@mosk.tytlabs.co.jp [Toyota Central Research and Development Labs, Nagakute, Aichi 480-1192 (Japan); Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Nishikawa, Kazutaka; Iizuka, Hideo [Toyota Central Research and Development Labs, Nagakute, Aichi 480-1192 (Japan); Toshiyoshi, Hiroshi [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8904 (Japan)

2014-12-22

Vanadium dioxide (VO{sub 2}) exhibits a phase-change behavior from the insulating state to the metallic state around 340 K. By using this effect, we experimentally demonstrate a radiative thermal rectifier in the far-field regime with a thin film VO{sub 2} deposited on the silicon wafer. A rectification contrast ratio as large as two is accurately obtained by utilizing a one-dimensional steady-state heat flux measurement system. We develop a theoretical model of the thermal rectifier with optical responses of the materials retrieved from the measured mid-infrared reflection spectra, which is cross-checked with experimentally measured heat flux. Furthermore, we tune the operating temperatures by doping the VO{sub 2} film with tungsten (W). These results open up prospects in the fields of thermal management and thermal information processing.

Semi-conductor rectifiers

International Nuclear Information System (INIS)

1981-01-01

A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

Active and reactive power control of a current-source PWM-rectifier using space vectors

Energy Technology Data Exchange (ETDEWEB)

Salo, M.; Tuusa, H. [Tampere University of Technology (Finland). Department of Electrical Engineering, Power Electronics

1997-12-31

In this paper the current-source PWM-rectifier with active and reactive power control is presented. The control system is realized using space vector methods. Also, compensation of the reactive power drawn by the line filter is discussed. Some simulation results are shown. (orig.) 8 refs.

Manufacture of the rectifier of the HT-7U PFPS

International Nuclear Information System (INIS)

Gao Ge; Fu Peng; Tang Lunjun; Wang Linsen

2005-01-01

The rectifiers of the HT-7U poloidal field power supply (PFPS) are introduced. A new control method, four quadrants converter, is brought forward, which overcomes the short-coming of both the circulating current mode and the non-circulating current mode. This control mode also resolves the problem of DC circulating current in the identical phase anti-parallel connection rectifiers when these rectifiers run in the circulating current mode. (authors)

Rectifier cabinet static breaker

International Nuclear Information System (INIS)

Costantino, R.A. Jr; Gliebe, R.J.

1992-01-01

A rectifier cabinet static breaker replaces a blocking diode pair with an SCR and the installation of a power transistor in parallel with the latch contactor to commutate the SCR to the off state. The SCR serves as a static breaker with fast turnoff capability providing an alternative way of achieving reactor scram in addition to performing the function of the replaced blocking diodes. The control circuitry for the rectifier cabinet static breaker includes on-line test capability and an LED indicator light to denote successful test completion. Current limit circuitry provides high-speed protection in the event of overload. 7 figs

Rectifier cabinet static breaker

Science.gov (United States)

Costantino, Jr, Roger A.; Gliebe, Ronald J.

1992-09-01

A rectifier cabinet static breaker replaces a blocking diode pair with an SCR and the installation of a power transistor in parallel with the latch contactor to commutate the SCR to the off state. The SCR serves as a static breaker with fast turnoff capability providing an alternative way of achieving reactor scram in addition to performing the function of the replaced blocking diodes. The control circuitry for the rectifier cabinet static breaker includes on-line test capability and an LED indicator light to denote successful test completion. Current limit circuitry provides high-speed protection in the event of overload.

Design and control of an LCL-filter-based three-phase active rectifier

DEFF Research Database (Denmark)

Liserre, Marco; Blaabjerg, Frede; Hansen, Steffan

2005-01-01

This paper proposes a step-by-step procedure for designing the LCL filter of a front-end three-phase active rectifier. The primary goal is to reduce the switching frequency ripple at a reasonable cost, while at the same time achieving a high-performance front-end rectifier (as characterized...... by a rapid dynamic response and good stability margin). An example LCL filter design is reported and a filter has been built and tested using the values obtained from this design. The experimental results demonstrate the performance of the design procedure both for the LCL filter and for the rectifier...... a powerful tool to design an LCL-filter-based active rectifier while avoiding trial-and-error procedures that can result in having to build several filter prototypes....

Nonlinear control techniques of a controllable rectifier/inverter-motor drive system with a small dc-link capacitor

International Nuclear Information System (INIS)

Liutanakul, Pisit; Pierfederici, Serge; Meibody-Tabar, Farid

2008-01-01

The necessity of the converters compactness in many applications imposes the reduction of their different components size when it is possible. In this paper, a control method allowing the use of a small size dc-link capacitor for the cascade of voltage controlled-rectifier/inverter-motor drive system is proposed. This is achieved by adding the power balance equation in the system's model and the application of an exact input/output feedback linearization technique in a way that the rectifier controller compensates any sudden change in the inverter load, which is here an induction motor. Since the exact input/output feedback linearization technique is sensitive to the uncertainties over system parameters, a robust control strategy based on sliding mode controller is proposed. By this approach, the dc-link voltage becomes almost insensitive to the load variations. As a result, the level of the dc-link voltage could be stabilized with a small size dc-link capacitor. Without any considerations of the RMS current stress on this dc-link capacitor, a calculation method of a minimum value of this capacitor based on its storage energy is proposed. All the investigations are shown by computer simulations and the performance of controlled system is verified by experimentation results

Harmonic Distortion Performance of Multi Three-Phase SCR-Fed Drive Systems with Controlled DC-Link Current under Unbalanced Grid

DEFF Research Database (Denmark)

Soltani, Hamid; Davari, Pooya; Blaabjerg, Frede

2017-01-01

. In this paper, the main aim is to analyze the effects of the grid unbalanced voltage on the multi-unit three-phase ASDs with the Silicon-Controlled Rectifier (SCR)-fed front-end rectifiers, where the DC-link current is controlled utilizing an Electronic Inductor (EI) technique. In this respect, the main...

Control of SiC Based Front-End Rectifier under Unbalanced Supply Voltage

DEFF Research Database (Denmark)

Maheshwari, Ramkrishan; Trintis, Ionut; Gohil, Ghanshyamsinh Vijaysinh

2015-01-01

A voltage source converter is used as a front end converter typically. In this paper, a converter which is realized using SiC MOSFET is considered. Due to SiC MOSFET, a switching frequency more than 50 kHz can be achieved. This can help increasing the current control loop bandwidth, which is not ...... together with a positive-sequence current controller for the front-end rectifier. A gain in the feedforward term can be changed to control the negative-sequence current. Simulation results are presented to verify the theory....

CMOS single-stage input-powered bridge rectifier with boost switch and duty cycle control

Science.gov (United States)

Radzuan, Roskhatijah; Mohd Salleh, Mohd Khairul; Hamzah, Mustafar Kamal; Ab Wahab, Norfishah

2017-06-01

This paper presents a single-stage input-powered bridge rectifier with boost switch for wireless-powered devices such as biomedical implants and wireless sensor nodes. Realised using CMOS process technology, it employs a duty cycle switch control to achieve high output voltage using boost technique, leading to a high output power conversion. It has only six external connections with the boost inductance. The input frequency of the bridge rectifier is set at 50 Hz, while the switching frequency is 100 kHz. The proposed circuit is fabricated on a single 0.18-micron CMOS die with a space area of 0.024 mm2. The simulated and measured results show good agreement.

Common rectifier diodes in temperature measurement applications below 50 K

International Nuclear Information System (INIS)

Jaervelae, J; Stenvall, A; Mikkonen, R

2010-01-01

In this paper we studied the use of common electronic semiconductor diodes in temperature measurements at cryogenic atmosphere. The motivation for this is the high price of calibrated cryogenic temperature sensors since there are some applications, like quench detection, in which a cheaper and a less accurate sensor would suffice. We measured the forward voltage as a function of temperature, V f (T), of several silicon rectifier diodes to determine the accuracy and interchangeability of the diodes. The experimental results confirmed that V f (T) of common rectifier diodes are similar to cryogenic sensor diodes, but the variability between two samples is much larger. The interchangeability of the diodes proved to be poor if absolute temperatures are to be measured. However for sensing changes in temperature they proved to be adequate and thus can be used to measure e.g. quench propagation or sense quench ignition at multiple locations with cheap price.

A DC-Link Modulation Scheme with Phase-Shifted Current Control for Harmonic Cancellations in Multidrive Applications

DEFF Research Database (Denmark)

Yang, Yongheng; Davari, Pooya; Zare, Firuz

2016-01-01

of a new DC link modulation scheme with a phase-shifted current control enabled by the SCR. The DC-link current modulation scheme is implemented by adding and subtracting specific modulation levels, which makes the total currents drawn from the grid “multi-level”, resulting in an improved current quality......This letter proposes a harmonic mitigation strategy to cancel out current harmonics induced by the front-end rectifiers in multi-drive systems, which consist of diode rectifiers, Silicon-Controlled Rectifiers (SCR), and boost converters in the DC-link. The proposed strategy is a combination...

Pharmacological Conversion of a Cardiac Inward Rectifier into an Outward Rectifier Potassium Channel.

Science.gov (United States)

Moreno-Galindo, Eloy G; Sanchez-Chapula, Jose A; Tristani-Firouzi, Martin; Navarro-Polanco, Ricardo A

2016-09-01

Potassium (K(+)) channels are crucial for determining the shape, duration, and frequency of action-potential firing in excitable cells. Broadly speaking, K(+) channels can be classified based on whether their macroscopic current outwardly or inwardly rectifies, whereby rectification refers to a change in conductance with voltage. Outwardly rectifying K(+) channels conduct greater current at depolarized membrane potentials, whereas inward rectifier channels conduct greater current at hyperpolarized membrane potentials. Under most circumstances, outward currents through inwardly rectifying K(+) channels are reduced at more depolarized potentials. However, the acetylcholine-gated K(+) channel (KACh) conducts current that inwardly rectifies when activated by some ligands (such as acetylcholine), and yet conducts current that outwardly rectifies when activated by other ligands (for example, pilocarpine and choline). The perplexing and paradoxical behavior of KACh channels is due to the intrinsic voltage sensitivity of the receptor that activates KACh channels, the M2 muscarinic receptor (M2R). Emerging evidence reveals that the affinity of M2R for distinct ligands varies in a voltage-dependent and ligand-specific manner. These intrinsic receptor properties determine whether current conducted by KACh channels inwardly or outwardly rectifies. This review summarizes the most recent concepts regarding the intrinsic voltage sensitivity of muscarinic receptors and the consequences of this intriguing behavior on cardiac physiology and pharmacology of KACh channels. Copyright © 2016 by The American Society for Pharmacology and Experimental Therapeutics.

SPS rectifier stations

CERN Multimedia

CERN PhotoLab

1974-01-01

The first of the twelves SPS rectifier stations for the bending magnets arrived at CERN at the end of the year. The photograph shows a station with the rectifiers on the left and in the other three cubicles the chokes, capacitors and resistor of the passive filter.

Current-voltage characteristics of porous-silicon structures

International Nuclear Information System (INIS)

Diligenti, A.; Nannini, A.; Pennelli, G.; Pieri, F.; Fuso, F.; Allegrini, M.

1996-01-01

I-V DC characteristics have been measured on metal/porous-silicon structures. In particular, the measurements on metal/free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/porous-silicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activation energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifying contacts, are described

Generalized space vector control for current source inverters and rectifiers

Directory of Open Access Journals (Sweden)

Roseline J. Anitha

2016-06-01

Full Text Available Current source inverters (CSI is one of the widely used converter topology in medium voltage drive applications due to its simplicity, motor friendly waveforms and reliable short circuit protection. The current source inverters are usually fed by controlled current source rectifiers (CSR with a large inductor to provide a constant supply current. A generalized control applicable for both CSI and CSR and their extension namely current source multilevel inverters (CSMLI are dealt in this paper. As space vector pulse width modulation (SVPWM features the advantages of flexible control, faster dynamic response, better DC utilization and easy digital implementation it is considered for this work. This paper generalizes SVPWM that could be applied for CSI, CSR and CSMLI. The intense computation involved in framing a generalized space vector control are discussed in detail. The algorithm includes determination of band, region, subregions and vectors. The algorithm is validated by simulation using MATLAB /SIMULINK for CSR 5, 7, 13 level CSMLI and for CSR fed CSI.

A Voltage Modulated DPC Approach for Three-Phase PWM Rectifier

DEFF Research Database (Denmark)

Gui, Yonghao; Li, Mingshen; Lu, Jinghang

2018-01-01

In this paper, a voltage modulated direct power control for three-phase pulse-width modulated rectifier is proposed. With the suggested method, the differential equations describing the rectifier dynamics are changing from a linear time-varying system into a linear time-invariant one. In this way...

MPC-SVM method for Vienna rectifier with PMSG used in Wind Turbine Systems

DEFF Research Database (Denmark)

Lee, June-Seok; Bak, Yeongsu; Lee, Kyo-Beum

2016-01-01

Using a Vienna rectifier as the machine-side rectifier of back-to-back converter is advantageous in terms of size and cost compared to three-level topologies and for this reason, the Vienna rectifier has been used in Wind Turbine Systems (WTS). This paper proposes a Model Predictive Control (MPC......) method for the Vienna rectifier used in WTS with a Permanent Magnet Synchronous Generator (PMSG). The proposed MPC method considers the feasible eight-voltage vectors of the Vienna rectifier. In addition, the voltage vectors, which are the center voltage vectors of two feasible adjacent voltage vectors...

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Single Phase Current-Source Active Rectifier for Traction: Control System Design and Practical Problems

Directory of Open Access Journals (Sweden)

Jan Michalik

2006-01-01

Full Text Available This research has been motivated by industrial demand for single phase current-source active rectifier dedicated for reconstruction of older types of dc machine locomotives. This paper presents converters control structure design and simulations. The proposed converter control is based on the mathematical model and due to possible interaction with railway signaling and required low switching frequency employs synchronous PWM. The simulation results are verified by experimental tests performed on designed laboratory prototype of power of 7kVA

Three Phase Six-Switch PWM Buck Rectifier with Power Factor Improvement

DEFF Research Database (Denmark)

Zafar Ullah Khan, M; Mohsin Naveed, M.; Hussain, Dil Muhammad Akbar

2013-01-01

Conventional Phase Controlled Rectifier injects low order current harmonics into the AC mains. Large size filtering components are required to attenuate these harmonics. In this paper, Three Phase Six-Switch PWM Buck Rectifier[1] is presented which operates at nearly unity power factor and provides...

Control Strategy of PWM Rectifiers Connected to Unbalanced Grids

Czech Academy of Sciences Publication Activity Database

Bejvl, Martin; Švec, J.; Tlustý, J.; Valouch, V.

-, č. 11 (2013) ISSN 2172-038X. [International Conference on Renewable Energies and Power Quality (ICREPQ´13). Bilbao, 20.03.2013-22.03.2013] Institutional support: RVO:61388998 Keywords : electric power system * PWM rectifier * dc voltage ripple Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi-level pinning at the molecule-metal interface.

Science.gov (United States)

Lenfant, S; Guerin, D; Tran Van, F; Chevrot, C; Palacin, S; Bourgoin, J P; Bouloussa, O; Rondelez, F; Vuillaume, D

2006-07-20

We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices, and we examine the extent to which the nature of the pi end group (change in the energy position of their molecular orbitals) drives the properties of these molecular diodes. Self-assembled monolayers of alkyl chains (different chain lengths from 6 to 15 methylene groups) functionalized by phenyl, anthracene, pyrene, ethylene dioxythiophene, ethylene dioxyphenyl, thiophene, terthiophene, and quaterthiophene were synthesized and characterized by contact angle measurements, ellipsometry, Fourier transform infrared spectroscopy, and atomic force microscopy. We demonstrate that reasonably well-packed monolayers are obtained in all cases. Their electrical properties were assessed by dc current-voltage characteristics and high-frequency (1-MHz) capacitance measurements. For all of the pi groups investigated here, we observed rectification behavior. These results extend our preliminary work using phenyl and thiophene groups (Lenfant et al., Nano Lett. 2003, 3, 741). The experimental current-voltage curves were analyzed with a simple analytical model, from which we extracted the energy position of the molecular orbital of the pi group in resonance with the Fermi energy of the electrodes. We report experimental studies of the band lineup in these silicon/alkyl pi-conjugated molecule/metal junctions. We conclude that Fermi-level pinning at the pi group/metal interface is mainly responsible for the observed absence of a dependence of the rectification effect on the nature of the pi groups, even though the groups examined were selected to have significant variations in their electronic molecular orbitals.

Feedback loop compensates for rectifier nonlinearity

Science.gov (United States)

1966-01-01

Signal processing circuit with two negative feedback loops rectifies two sinusoidal signals which are 180 degrees out of phase and produces a single full-wave rectified output signal. Each feedback loop incorporates a feedback rectifier to compensate for the nonlinearity of the circuit.

The harmonic composition of the output voltage of a rectifier unit with a PWM voltage booster converter.

OpenAIRE

ПАНЧЕНКО, В В

2015-01-01

The author investigates a rectifier unit constructed on the basis of cascade connection of the main non-controlled m-pulse rectifier and PWM voltage booster converter. The research presents the analysis of the harmonic composition of the output voltage of a rectifier unit with a PWM voltage booster converter on completely controlled keys. The dependence of the relative harmonic amplitude on the commutation corner is defined. The estimation of a rectifier unit electromagnetic compatibility wit...

Realistic-contact-induced enhancement of rectifying in carbon-nanotube/graphene-nanoribbon junctions

International Nuclear Information System (INIS)

Zhang, Xiang-Hua; Li, Xiao-Fei; Wang, Ling-Ling; Xu, Liang; Luo, Kai-Wu

2014-01-01

Carbon-nanotube/graphene-nanoribbon junctions were recently fabricated by the controllable etching of single-walled carbon-nanotubes [Wei et al., Nat. Commun. 4, 1374 (2013)] and their electronic transport properties were studied here. First principles results reveal that the transmission function of the junctions show a heavy dependence on the shape of contacts, but rectifying is an inherent property which is insensitive to the details of contacts. Interestingly, the rectifying ratio is largely enhanced in the junction with a realistic contact and the enhancement is insensitive to the details of contact structures. The stability of rectifying suggests a significant feasibility to manufacture realistic all-carbon rectifiers in nanoelectronics

Precision rectifier detectors for ac resistance bridge measurements with application to temperature control systems for irradiation creep experiments

Energy Technology Data Exchange (ETDEWEB)

Duncan, M. G.

1977-05-01

The suitability of several temperature measurement schemes for an irradiation creep experiment is examined. It is found that the specimen resistance can be used to measure and control the sample temperature if compensated for resistance drift due to radiation and annealing effects. A modified Kelvin bridge is presented that allows compensation for resistance drift by periodically checking the sample resistance at a controlled ambient temperature. A new phase-insensitive method for detecting the bridge error signals is presented. The phase-insensitive detector is formed by averaging the magnitude of two bridge voltages. Although this method is substantially less sensitive to stray reactances in the bridge than conventional phase-sensitive detectors, it is sensitive to gain stability and linearity of the rectifier circuits. Accuracy limitations of rectifier circuits are examined both theoretically and experimentally in great detail. Both hand analyses and computer simulations of rectifier errors are presented. Finally, the design of a temperature control system based on sample resistance measurement is presented. The prototype is shown to control a 316 stainless steel sample to within a 0.15/sup 0/C short term (10 sec) and a 0.03/sup 0/C long term (10 min) standard deviation at temperatures between 150 and 700/sup 0/C. The phase-insensitive detector typically contributes less than 10 ppM peak resistance measurement error (0.04/sup 0/C at 700/sup 0/C for 316 stainless steel or 0.005/sup 0/C at 150/sup 0/C for zirconium).

Rectifiers

CERN Document Server

Visintini, R

2006-01-01

In particle accelerators, rectifiers are used to convert the AC voltage into DC or low-frequency AC to supply loads like magnets or klystrons. Some loads require high currents, others high voltages, and others both high current and high voltage. This presentation deals with the particular class of line commutated rectifiers (the switching techniques are treated elsewhere). The basic principles of rectification are presented. The effects of real world parameters are then taken into consideration. Some aspects related to the filtering of the harmonics both on the DC side and on the AC side are presented. Some protection issues associated with the use of thyristors and diodes are also treated. An example of power converter design, referring to a currently operating magnet power supply, is included. An extended bibliography (including some internet links) ends this presentation.

Design and implementation of predictive current control of three-phase PWM rectifier using space-vector modulation (SVM)

International Nuclear Information System (INIS)

Bouafia, Abdelouahab; Gaubert, Jean-Paul; Krim, Fateh

2010-01-01

This paper is concerned with the design and implementation of current control of three-phase PWM rectifier based on predictive control strategy. The proposed predictive current control technique operates with constant switching frequency, using space-vector modulation (SVM). The main goal of the designed current control scheme is to maintain the dc-bus voltage at the required level and to achieve the unity power factor (UPF) operation of the converter. For this purpose, two predictive current control algorithms, in the sense of deadbeat control, are developed for direct controlling input current vector of the converter in the stationary α-β and rotating d-q reference frame, respectively. For both predictive current control algorithms, at the beginning of each switching period, the required rectifier average voltage vector allowing the cancellation of both tracking errors of current vector components at the end of the switching period, is computed and applied during a predefined switching period by means of SVM. The main advantages of the proposed predictive current control are that no need to use hysteresis comparators or PI controllers in current control loops, and constant switching frequency. Finally, the developed predictive current control algorithms were tested both in simulations and experimentally, and illustrative results are presented here. Results have proven excellent performance in steady and transient states, and verify the validity of the proposed predictive current control which is compared to other control strategies.

Silicon Sheet Quality is Improved By Meniscus Control

Science.gov (United States)

Yates, D. A.; Hatch, A. E.; Goldsmith, J. M.

1983-01-01

Better quality silicon crystals for solar cells are possible with instrument that monitors position of meniscus as sheet of solid silicon is drawn from melt. Using information on meniscus height, instrument generates feedback signal to control melt temperature. Automatic control ensures more uniform silicon sheets.

Topology optimization of viscoelastic rectifiers

DEFF Research Database (Denmark)

Jensen, Kristian Ejlebjærg; Szabo, Peter; Okkels, Fridolin

2012-01-01

An approach for the design of microfluidic viscoelastic rectifiers is presented based on a combination of a viscoelastic model and the method of topology optimization. This presumption free approach yields a material layout topologically different from experimentally realized rectifiers...

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents.

Science.gov (United States)

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-04-19

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power P OUT of 564 μW and a rectifier output voltage V RECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a P OUT of 288 μW and a V RECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier.

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents

Science.gov (United States)

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-01-01

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power POUT of 564 μW and a rectifier output voltage VRECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a POUT of 288 μW and a VRECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier. PMID:28422085

Synchronous Half-Wave Rectifier

Science.gov (United States)

Rippel, Wally E.

1989-01-01

Synchronous rectifying circuit behaves like diode having unusually low voltage drop during forward-voltage half cycles. Circuit particularly useful in power supplies with potentials of 5 Vdc or less, where normal forward-voltage drops in ordinary diodes unacceptably large. Fabricated as monolithic assembly or as hybrid. Synchronous half-wave rectifier includes active circuits to attain low forward voltage drop and high rectification efficiency.

Peak Power Control with an Energy Management System

Science.gov (United States)

2013-03-01

EMS. .....................18  Figure 17.  Circuit schematic implemented in the Simulink model. ..................................18  Figure 18.  The...21  Figure 20.  The non-critical load block implementation ...Modulation SCR Silicon Controller Rectifier SDC Student Design Center TTL Transistor Transistor Logic USB Universal Serial Bus VHDL VHSIC Hardware

46 CFR 183.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

46 CFR 129.360 - Semiconductor-rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

46 CFR 120.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

A low cost rapid prototype platform for a three phase PFC rectifier application

DEFF Research Database (Denmark)

Haase, Frerk; Kouchaki, Alireza; Nymand, Morten

2015-01-01

In this paper the design and development of a low cost rapid prototype platform for a Three Phase PFC rectifier application is presented. The active rectifier consists of a SiC-MOSFET based PWM converter and a low cost rapid prototype platform for simulating and implementing the digital control...

Enhanced Phase-Shifted Current Control for Harmonic Cancellation in Three-Phase Multiple Adjustable Speed Drive Systems

DEFF Research Database (Denmark)

Yang, Yongheng; Davari, Pooya; Zare, Firuz

2017-01-01

A phase-shifted current control can be employed to mitigate certain harmonics induced by the Diode Rectifiers (DR) and Silicon-Controlled Rectifiers (SCR) as the front-ends of multiple parallel Adjustable Speed Drive (ASD) systems. However, the effectiveness of the phase-shifted control relies...... on the loading condition of each drive unit as well as the number of drives in parallel. In order to enhance the harmonic cancellation by means of the phase-shifted current control, the currents drawn by the rectifiers should be maintained almost at the same level. Thus, this paper firstly analyzes the impact...... of unequal loading among the parallel drives, and a scheme to enhance the performance is introduced to improve the quality of the total grid current, where partial loading operation should be enabled. Simulation and experimental case studies on multidrive systems have demonstrated that the enhanced phase...

Structural basis of control of inward rectifier Kir2 channel gating by bulk anionic phospholipids.

Science.gov (United States)

Lee, Sun-Joo; Ren, Feifei; Zangerl-Plessl, Eva-Maria; Heyman, Sarah; Stary-Weinzinger, Anna; Yuan, Peng; Nichols, Colin G

2016-09-01

Inward rectifier potassium (Kir) channel activity is controlled by plasma membrane lipids. Phosphatidylinositol-4,5-bisphosphate (PIP2) binding to a primary site is required for opening of classic inward rectifier Kir2.1 and Kir2.2 channels, but interaction of bulk anionic phospholipid (PL(-)) with a distinct second site is required for high PIP2 sensitivity. Here we show that introduction of a lipid-partitioning tryptophan at the second site (K62W) generates high PIP2 sensitivity, even in the absence of PL(-) Furthermore, high-resolution x-ray crystal structures of Kir2.2[K62W], with or without added PIP2 (2.8- and 2.0-Å resolution, respectively), reveal tight tethering of the C-terminal domain (CTD) to the transmembrane domain (TMD) in each condition. Our results suggest a refined model for phospholipid gating in which PL(-) binding at the second site pulls the CTD toward the membrane, inducing the formation of the high-affinity primary PIP2 site and explaining the positive allostery between PL(-) binding and PIP2 sensitivity. © 2016 Lee et al.

Harmonic Distortion of Rectifier Topologies for Adjustable Speed Drives

DEFF Research Database (Denmark)

Hansen, Steffan

This thesis deals with the harmonic distortion of the diode rectifier and a number of alternative rectifier topologies for adjustable speed drives. The main intention of this thesis is to provide models and tools that allow easy prediction of the harmonic distortion of ASD’s in a given system...... rectifier are presented. The first level is an ideal model where the diode rectifier basically is treated as an independent (harmonic) current source. The second level is an empirical model, where simulated (or measured) values of the harmonic currents of the diode rectifier for different parameters......-angle of the individual harmonic currents of different diode rectifier types is analyzed. Four selected rectifier topologies with a high input power factor are presented. It is shown that using ac- or dc-coils is a very simple and efficient method to reduce the harmonic currents compared to the basic diode rectifier...

19 rectifiers to supply the coils of the TCV tokamak

International Nuclear Information System (INIS)

Fasel, D.; Perez, A.; Depreville, G.; Puchar, F.; Pahud, J.D.

1990-01-01

This paper describes the electrical network designed to supply the 19 coils of the TCV (Tokamak a Configuration Variable) tokamak. After a brief description of the main purpose of TCV, the general characteristics of the TCV network are given. Then the technical choices made for the rectifier power stage are detailed. There follows a description of the rectifier digital control electronics. Comments on simulations carried out and the actual status conclude the paper. (author) 3 refs., 5 figs., 2 tabs

RTD application in low power UHF rectifiers

International Nuclear Information System (INIS)

Sinyakin, V Yu; Makeev, M O; Meshkov, S A

2016-01-01

In the current work, the problem of UHF RFID passive tag sensitivity increase is considered. Tag sensitivity depends on HF signal rectifier efficiency and antenna-rectifier impedance matching. Possibility of RFID passive tag sensitivity increase up to 10 times by means of RTD use in HF signal rectifier in comparison with tags based on Schottky barrier diode is shown. (paper)

Sensitivity analysis of an LCL-filter-based three-phase active rectifier via a virtual circuit approach

DEFF Research Database (Denmark)

Blaabjerg, Frede; Chiarantoni, Ernesto; Aquila, Antonio Dell’

2004-01-01

Three-phase active rectifiers based on the voltage source converter topology can successfully replace traditional thyristor based rectifiers or diode bridge plus chopper in interfacing dc-systems to the grid. However, if the application in which they are employed has a high safety issue......, to the grid side stiffness and to the parameters of the controller has never been detailed considered. In this paper the experimental results of an LCL-filter-based three-phase active rectifier are analysed with the circuit theory approach. A ?virtual circuit? is synthesized in role of the digital controller...

A 62GHz inductor-peaked rectifier with 7% efficiency

NARCIS (Netherlands)

Gao, H.; Matters - Kammerer, M.; Milosevic, D.; Roermund, van A.H.M.; Baltus, P.G.M.

2013-01-01

This paper presents the first 62 GHz fully onchip RF-DC rectifier in 65nm CMOS technology. The rectifier is the bottleneck in realizing on-chip wireless power receivers. In this paper, efficiency problems of the mm-wave rectifier are discussed and the inductor-peaked rectifier structure is proposed

Performance improvement of three phase rectifier by employing electronic smoothing inductor

DEFF Research Database (Denmark)

Singh, Yash Veer; Rasmussen, Peter Omand; Andersen, Torben O.

2014-01-01

density of the rectifier. In case of an inverter connected to the output of the rectifier, peak to peak voltage ripples to the front end of the inverter reduces significantly by the ESI, and it increases lifetime of the capacitor connected to the dc link and reduces the voltage stress of the active power...... semiconductors of the inverter. In this paper, an average model of the ESI and its control schemes are presented....

Progress in the realization of a silicon-CNT photodetector

Energy Technology Data Exchange (ETDEWEB)

Aramo, C., E-mail: aramo@na.infn.it [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Ambrosio, A. [CNR-SPIN U.O.S. di Napoli (Italy); Dipartimento di Scienze Fisiche, Universita degli Studi di Napoli Federico II, Via Cintia 2, 80126 Napoli (Italy); Ambrosio, M. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Castrucci, P. [Dipartimento di Fisica, Universita degli Studi di Roma Tor Vergata,Via della Ricerca Scientifica 1, 00133 Roma (Italy); Cilmo, M. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); De Crescenzi, M. [Dipartimento di Fisica, Universita degli Studi di Roma Tor Vergata,Via della Ricerca Scientifica 1, 00133 Roma (Italy); Fiandrini, E. [INFN, Sezione di Perugia e Dipartimento di Fisica, Universita degli Studi di Perugia, PiazzaUniversita 1, 06100 Perugia (Italy); Guarino, F. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Dipartimento di Scienze Fisiche, Universita degli Studi di Napoli Federico II, Via Cintia 2, 80126 Napoli (Italy); Grossi, V. [Dipartimento di Fisica, Universita degli Studi dell' Aquila, Via Vetoio 10, 67100 Coppito, L' Aquila (Italy); Nappi, E. [INFN, Sezione di Bari, e Dipartimento di Fisica, Universita degli Studi di Bari, Via Amendola 173, 70126 Bari (Italy); Passacantando, M. [Dipartimento di Fisica, Universita degli Studi dell' Aquila, Via Vetoio 10, 67100 Coppito, L' Aquila (Italy); Pignatel, G. [INFN, Sezione di Perugia e Dipartimento di Fisica, Universita degli Studi di Perugia, PiazzaUniversita 1, 06100 Perugia (Italy); and others

2012-12-11

The realization of a Silicon Carbon Nanotube heterojuntion opens the door to a new generation of photodetectors (Si-CNT detector) based on the coupling between this two materials. In particular the growth of Multiwall Carbon Nanotubes on the surface of a n-doped silicon substrate results on a Schottky diode junction with precise rectifying characteristics. The obtained device presents a low dark current, high efficiency in the photoresponsivity, high linearity and a wide stability range. The junction barrier is about 3.5 V in reverse polarity with a breakdown limit at more than 100 V. The spectral behavior reflects the silicon spectral range with a maximum at about 880 nm.

Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky junction.

Science.gov (United States)

Rajput, S; Chen, M X; Liu, Y; Li, Y Y; Weinert, M; Li, L

2013-01-01

When graphene is interfaced with a semiconductor, a Schottky contact forms with rectifying properties. Graphene, however, is also susceptible to the formation of ripples upon making contact with another material. Here we report intrinsic ripple- and electric field-induced effects at the graphene semiconductor Schottky junction, by comparing chemical vapour-deposited graphene transferred on semiconductor surfaces of opposite polarization-the hydrogen-terminated silicon and carbon faces of hexagonal silicon carbide. Using scanning tunnelling microscopy/spectroscopy and first-principles calculations, we show the formation of a narrow Schottky dipole barrier approximately 10 Å wide, which facilitates the observed effective electric field control of the Schottky barrier height. We further find atomic-scale spatial fluctuations in the Schottky barrier that directly follow the undulation of ripples on both graphene-silicon carbide junctions. These findings reveal fundamental properties of the graphene/semiconductor Schottky junction-a key component of vertical graphene devices that offer functionalities unattainable in planar device architecture.

Rectifier transformer saturation on commutation failure

International Nuclear Information System (INIS)

Lu, E.; Bronner, G.

1989-01-01

The rectifier transformer's service differs from the power transformer's service because of the rectifier load. Under certain fault conditions, such as a commutation failure, d.c. magnetization may be introduced into the rectifier transformer cores, resulting in possible saturation of the magnetic circuit, thus in degradation of the performance of the transformer. It is the purpose of this paper to present an approach for evaluating the electromagnetic transient process under such a fault condition. The studies were made on the operating 1000MVA converter system at the Princeton Plasma Physics Laboratory

Junction barrier Schottky rectifier with an improved P-well region

International Nuclear Information System (INIS)

Wang Ying; Li Ting; Cao Fei; Shao Lei; Chen Yu-Xian

2012-01-01

A junction barrier Schottky (JBS) rectifier with an improved P-well on 4H—SiC is proposed to improve the V F —I R trade-off and the breakdown voltage. The reverse current density of the proposed JBS rectifier at 300 K and 800 V is about 3.3×10 −8 times that of the common JBS rectifier at no expense of the forward voltage drop. This is because the depletion layer thickness in the P-well region at the same reverse voltage is larger than in the P + grid, resulting in a lower spreading current and tunneling current. As a result, the breakdown voltage of the proposed JBS rectifier is over 1.6 kV, that is about 0.8 times more than that of the common JBS rectifier due to the uniform electric field. Although the series resistance of the proposed JBS rectifier is a little larger than that of the common JBS rectifier, the figure of merit (FOM) of the proposed JBS rectifier is about 2.9 times that of the common JBS rectifier. Based on simulating the values of susceptibility of the two JBS rectifiers to electrostatic discharge (ESD) in the human body model (HBM) circuits, the failure energy of the proposed JBS rectifier increases 17% compared with that of the common JBS rectifier. (interdisciplinary physics and related areas of science and technology)

Genetic Algorithm-Based Design of the Active Damping for an LCL-Filter Three-Phase Active Rectifier

DEFF Research Database (Denmark)

Liserre, Marco; Aquila, Antonio Dell; Blaabjerg, Frede

2004-01-01

Active rectifiers/inverters are becoming used more and more often in regenerative systems and distributed power systems. Typically, the interface between the grid and rectifier is either an inductor or an LCL-filter. The use of an LCL-filter mitigates the switching ripple injected in the grid...... by a three-phase active rectifier. However, stability problems can arise in the current control loop. In order to overcome them, a damping resistor can be inserted, at the price of a reduction of efficiency. The use of active damping by means of control may seem attractive, but it is often limited by the use...

Minimum component high frequency current mode rectifier | Sampe ...

African Journals Online (AJOL)

In this paper a current mode full wave rectifier circuit is proposed. The current mode rectifier circuit is implemented utilizing a floating current source (FCS) as an active element. The minimum component full wave rectifier utilizes only a single floating current source, two diodes and two grounded resistors. The extremely ...

Rectifier Filters

Directory of Open Access Journals (Sweden)

Y. A. Bladyko

2010-01-01

Full Text Available The paper contains definition of a smoothing factor which is suitable for any rectifier filter. The formulae of complex smoothing factors have been developed for simple and complex passive filters. The paper shows conditions for application of calculation formulae and filters. 

Nanofibrous p-n Junction and Its Rectifying Characteristics

Directory of Open Access Journals (Sweden)

Jian Fang

2013-01-01

Full Text Available Randomly oriented tin oxide (SnO2 nanofibers and poly(3,4-ethylenedioxythiophene-poly(styrenesulfonate/polyvinylpyrrolidone (PEDOT:PSS/PVP nanofibers were prepared by a two-step electrospinning technique to form a layered fibrous mat. The current-voltage measurement revealed that the fibrous mat had an obvious diode-rectifying characteristic. The thickness of the nanofiber layers was found to have a considerable influence on the device resistance and rectifying performance. Such an interesting rectifying property was attributed to the formation of a p-n junction between the fibrous SnO2 and PEDOT:PSS/PVP layers. This is the first report that a rectifying junction can be formed between two layers of electrospun nanofiber mats, and the resulting nanofibrous diode rectifier may find applications in sensors, energy harvest, and electronic textiles.

Design Research on Three-Phase PWM Rectifier Based on Double Closed Loop Control Technology

Directory of Open Access Journals (Sweden)

Guang Ya LIU

2014-02-01

Full Text Available Based on the high frequency of three-phase voltage source PWM rectifier, this paper established a mathematical model of three phase current inner ring and outer ring voltage, and put forward the setting method of three phase double closed loop control. Finally, it was verified through simulation. The experimental results show that Three-phase output of DC voltage is stable with the operation of regulating systems, the current flowing into the grid tends to be sinusoidal and power factor is close to 1, which greatly reduce the interference of harmonics on the grid, thus improve grid operation.

An Improved Current-Doubler Rectifier for the Marine Controlled Source Electromagnetic Transmitter

Directory of Open Access Journals (Sweden)

Hongxi Song

2018-01-01

Full Text Available High power marine controlled source electromagnetic transmitters have gained interest with applications in marine geological survey and mineral resources exploration. The direct current to direct current (DC-DC converter that is typically used in marine transmitters has some issues, as the insulated-gate bipolar transistor (IGBT tube cannot achieve zero-voltage switching (ZVS. In particular, lagging-leg switching cannot easily achieve ZVS. The conversion efficiency of the heat converter requires improvement. This paper proposes an improved current-doubler rectifier for the marine controlled source electromagnetic transmitter (ICDR-MCSET. Resonant inductance is increased and a blocking capacitor is added to the converter (DC-DC circuit, where the converter can achieve ZVS in a wide load range. This results in the effective decrease of the heating temperature and the improvement of transformation efficiency. Saber software simulation and a 20 KW electromagnetic transmitter are used to verify the results, which show that the method is feasible and effective.

Electrical behavior of free-standing porous silicon layers

International Nuclear Information System (INIS)

Bazrafkan, I.; Dariani, R.S.

2009-01-01

The electrical behavior of porous silicon (PS) layers has been investigated on one side of p-type silicon with various anodization currents and electrolytes. The two contact I-V characteristic is assigned by the metal/porous silicon rectifying interface, whereas, by using the van der Pauw technique, a nonlinear dependence of the current vs voltage was found. By using Dimethylformamide (DMF) in electrolyte, regular structures and columns were formed and porosity increased. Our results showed that by using DMF, surface resistivity of PS samples increased and became double for free-standing porous silicon (FPS). The reason could be due to increasing surface area and adsorbing some more gas molecules. Activation energy of PS samples was also increased from 0.31 to 0.34 eV and became 0.35 eV for FPS. The changes induced by storage are attributed to the oxidation process of the internal surface of free-standing porous silicon layers.

Thirty-six pulse rectifier scheme based on zigzag auto-connected transformer

Directory of Open Access Journals (Sweden)

Xiao-Qiang Chen

2016-03-01

Full Text Available In this paper, a low kilo-volt-ampere rating zigzag connected autotransformer based 36-pulse rectifier system supplying vector controlled induction motor drives (VCIMD is designed, modeled and simulated. Detailed design procedure and magnetic rating calculation of the proposed autotransformer and interphase reactor is studied. Moreover, the design process of the autotransformer is modified to make it suitable for retrofit applications. Simulation results confirm that the proposed 36-pulse rectifier system is able to suppress less than 35th harmonics in the utility line current. The influence of load variation and load character is also studied to demonstrate the performance and effectiveness of the proposed 36-pulse rectifiers. A set of power quality indices at AC mains and DC link are presented to compare the performance of 6-, 24- and 36-pulse AC-DC converters.

A boron nitride nanotube peapod thermal rectifier

International Nuclear Information System (INIS)

Loh, G. C.; Baillargeat, D.

2014-01-01

The precise guidance of heat from one specific location to another is paramount in many industrial and commercial applications, including thermal management and thermoelectric generation. One of the cardinal requirements is a preferential conduction of thermal energy, also known as thermal rectification, in the materials. This study introduces a novel nanomaterial for rectifying heat—the boron nitride nanotube peapod thermal rectifier. Classical non-equilibrium molecular dynamics simulations are performed on this nanomaterial, and interestingly, the strength of the rectification phenomenon is dissimilar at different operating temperatures. This is due to the contingence of the thermal flux on the conductance at the localized region around the scatterer, which varies with temperature. The rectification performance of the peapod rectifier is inherently dependent on its asymmetry. Last but not least, the favourable rectifying direction in the nanomaterial is established.

A boron nitride nanotube peapod thermal rectifier

Energy Technology Data Exchange (ETDEWEB)

Loh, G. C., E-mail: jgloh@mtu.edu [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Institute of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Baillargeat, D. [CNRS-International-NTU-Thales Research Alliance (CINTRA), 50 Nanyang Drive, Singapore 637553 (Singapore)

2014-06-28

The precise guidance of heat from one specific location to another is paramount in many industrial and commercial applications, including thermal management and thermoelectric generation. One of the cardinal requirements is a preferential conduction of thermal energy, also known as thermal rectification, in the materials. This study introduces a novel nanomaterial for rectifying heat—the boron nitride nanotube peapod thermal rectifier. Classical non-equilibrium molecular dynamics simulations are performed on this nanomaterial, and interestingly, the strength of the rectification phenomenon is dissimilar at different operating temperatures. This is due to the contingence of the thermal flux on the conductance at the localized region around the scatterer, which varies with temperature. The rectification performance of the peapod rectifier is inherently dependent on its asymmetry. Last but not least, the favourable rectifying direction in the nanomaterial is established.

High current and high power superconducting rectifiers

International Nuclear Information System (INIS)

Kate, H.H.J. ten; Bunk, P.B.; Klundert, L.J.M. van de; Britton, R.B.

1981-01-01

Results on three experimental superconducting rectifiers are reported. Two of them are 1 kA low frequency flux pumps, one thermally and magnetically switched. The third is a low-current high-frequency magnetically switched rectifier which can use the mains directly. (author)

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

Directory of Open Access Journals (Sweden)

Wen-Chung Chang

2016-06-01

Full Text Available Vertically aligned p-type silicon nanowire (SiNW arrays were fabricated through metal-assisted chemical etching (MACE of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM, X-ray diffraction (XRD, and current−voltage (I−V measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

High Power Factor Hybrid Rectifier | Odeh | Nigerian Journal of ...

African Journals Online (AJOL)

This paper presents the analysis of a new single-phase hybrid rectifier with high power factor (PF) and low harmonic distortion current. The proposed rectifier structure is composed of an ordinary single-phase diode rectifier with parallel connection of a switched converter. It is outlined that the switched converter is capable of ...

RF rectifiers for EM power harvesting in a Deep Brain Stimulating device.

Science.gov (United States)

Hosain, Md Kamal; Kouzani, Abbas Z; Tye, Susannah; Kaynak, Akif; Berk, Michael

2015-03-01

A passive deep brain stimulation (DBS) device can be equipped with a rectenna, consisting of an antenna and a rectifier, to harvest energy from electromagnetic fields for its operation. This paper presents optimization of radio frequency rectifier circuits for wireless energy harvesting in a passive head-mountable DBS device. The aim is to achieve a compact size, high conversion efficiency, and high output voltage rectifier. Four different rectifiers based on the Delon doubler, Greinacher voltage tripler, Delon voltage quadrupler, and 2-stage charge pumped architectures are designed, simulated, fabricated, and evaluated. The design and simulation are conducted using Agilent Genesys at operating frequency of 915 MHz. A dielectric substrate of FR-4 with thickness of 1.6 mm, and surface mount devices (SMD) components are used to fabricate the designed rectifiers. The performance of the fabricated rectifiers is evaluated using a 915 MHz radio frequency (RF) energy source. The maximum measured conversion efficiency of the Delon doubler, Greinacher tripler, Delon quadrupler, and 2-stage charge pumped rectifiers are 78, 75, 73, and 76 % at -5 dBm input power and for load resistances of 5-15 kΩ. The conversion efficiency of the rectifiers decreases significantly with the increase in the input power level. The Delon doubler rectifier provides the highest efficiency at both -5 and 5 dBm input power levels, whereas the Delon quadrupler rectifier gives the lowest efficiency for the same inputs. By considering both efficiency and DC output voltage, the charge pump rectifier outperforms the other three rectifiers. Accordingly, the optimised 2-stage charge pumped rectifier is used together with an antenna to harvest energy in our DBS device.

Laserlike Vibrational Instability in Rectifying Molecular Conductors

DEFF Research Database (Denmark)

Lu, Jing Tao; Hedegård, Per; Brandbyge, Mads

2011-01-01

We study the damping of molecular vibrations due to electron-hole pair excitations in donor-acceptor (D-A) type molecular rectifiers. At finite voltage additional nonequilibrium electron-hole pair excitations involving both electrodes become possible, and contribute to the stimulated emission....... We investigate the effect in realistic molecular rectifier structures using first-principles calculations....

Extremal vectors and rectifiability | Enflo | Quaestiones Mathematicae

African Journals Online (AJOL)

Extremal vectors and rectifiability. ... The concept of extremal vectors of a linear operator with a dense range but not onto on a Hilbert space was introduced by P. Enflo in 1996 as a new approach to study invariant subspaces ... We show that in general curves that map numbers to backward minimal vectors are not rectifiable.

Quality evaluation of resistivity-controlled silicon crystals

Science.gov (United States)

Wang, Jong Hoe

2006-01-01

The segregation phenomenon of dopants causes a low production yield of silicon crystal that meets the resistivity tolerance required by device manufacturers. In order to control the macroscopic axial resistivity distribution in bulk crystal growth, numerous studies including continuous Czochralski method and double crucible technique have been studied. The simple B-P codoping method for improving the productivity of p-type silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. In this work, the quality of Czochralski-grown silicon single crystals with a diameter 200 mm using B-P codoping method was studied from the chemical and structural points of view. It was found that the characteristics of B-P codoped wafers including the oxygen precipitation behavior and the grown-in defects are same as that of conventional B-doped Czochralski crystals.

Measurement of Phase Dependent Impedance for 3-phase Diode Rectifier

DEFF Research Database (Denmark)

Kwon, Jun Bum; Wang, Xiongfei; Bak, Claus Leth

2016-01-01

This paper presents a new method to measure the phase dependent impedance from an experimental set up. Though most of power electronics based system is gradually migrating to IGBT based voltage source converter due to their controllability, the rectifier composed of diode or thyristor components...

Robust and reliable rectifier based on electronic inductor with improved performance

DEFF Research Database (Denmark)

Singh, Yash Veer; Rasmussen, Peter Omand; Andersen, Torben Ole

2014-01-01

of the rectifier, peak to peak voltage ripples to the front end of the inverter reduces significantly by the ESI, and it increases lifetime of the capacitor connected at the output and also reduces the voltage stress of the active power semiconductors of the inverter if any connected to the output. In this paper...... harmonic distortions (THDs) of the ac mains current in a three phase diode bridge rectifier. The ESI reduces the low frequency ripples and controls the intermediate dc-link voltage to a dc value and peak value of the mains current also reduces. In case of an inverter connected to the output...

The LHCb Silicon Tracker - Control system specific tools and challenges

CERN Document Server

Adeva, G; Esperante Pereira, D; Gallas, A; Pazos Alvarez, A; Perez Trigo, E; Rodriguez Perez, P; Saborido, J; Amhis, Y; Bay, A; Blanc, F; Bressieux, J; Conti, G; Dupertuis, F; Fave, V; Frei, R; Gauvin, N; Haefeli, G; Keune, A; Luisier, J; Marki, R; Muresan, R; Nakada, T; Needham, M; Knecht, M; Schneider, O; Tran, M; Anderson, J; Buechler, A; Bursche, A; Chiapolini, N; De Cian, M; Elsasser, C; Salzmann, C; Saornil Gamarra, S; Steiner, S; Steinkamp, O; Straumann, U; van Tilburg, J; Tobin, M; Vollhardt, A; Aquines Gutierrez, O; Bauer, C; Britsch, M; Maciuc, F; Schmelling, M; Voss, H; Iakovenko, V; Okhrimenko, O; Pugatch, V

2014-01-01

The Experiment Control System (ECS) of the LHCb Silicon Tracker sub-detectors is built on the integrated LHCb ECS framework. Although all LHCb sub-detectors use the same framework and follow the same guidelines, the Silicon Tracker control system uses some interesting additional features in terms of operation and monitoring. The main details are described in this document. Since its design, the Silicon Tracker control system has been continuously evolving in a quite disorganized way. Some major maintenance activities are required to be able to keep improving. A description of those activities can also be found here.

Structural Optimization of Non-Newtonian Rectifiers

DEFF Research Database (Denmark)

Jensen, Kristian Ejlebjærg; Okkels, Fridolin

When the size of fluidic devices is scaled down, inertial effects start to vanish such that the governing equation becomes linear. Some microfluidic devices rely on the non-linear term related to the inertia of the fluid, and one example is fluid rectifiers (diodes) e.g. related to some micropumps....... These rectifiers rely on the device geometry for their working mechanism, but on further downscaling the inertial effect vanishes and the governing equation starts to show symmetry properties. These symmetry properties reduce the geometry influence to the point where fluid rectifiers cease to function....... In this context it is natural to look for other sources of non-linearity and one possibility is to introduce a non-Newtonian working fluid. Non-Newtonian properties are due to stretching of large particles/molecules in the fluid and this is commonly seen for biological samples in “lab-on-a-chip” systems...

Effect of rotor rectifier on motor performance in slip recovery drives

Energy Technology Data Exchange (ETDEWEB)

Al Zahawi, B.A.T.; Jones, B.L.; Drury, W.

1987-01-01

The static Kramer system, comprising a slip-ring induction motor and a slip energy recovery circuit, is one of the simplest and most efficient forms of ac variable-speed drive. It is sometimes used to upgrade drives which had originally been designed for fixed speed operation, often with substantial energy savings. In such cases, it is important to know how the inclusion of a rectifier in the slip energy recovery circuit affects motor performance. A satisfactory model for the motor-rectifier combination is also needed to provide a sound basis for assessing alternative forms of recovery systems which aim to overcome the principal shortcomings of the drive, namely the magnitude and variability of its reactive power. Despite its simplicity, the Kramer drive presents a formidable analytical challenge. Rigorous analysis is particularly difficult and there is a need for a simpler form of analysis when calculating ratings and steady-state performance. The approach taken in this paper uses a transformer-type model for the motor, and largely analytical expressions for predicting torque, stator power, stator reactive power and rectifier output voltage. Motor resistances, diode characteristics, and the several possible rectifier overlap modes are included. It is shown that the rectifier has an adverse effect on stator reactive power, power factor, and peak torque, particularly at speeds well below synchronous, requiring some derating of motors designed for resistance control and also requiring additional power factor correction. While the analysis does not cater to variations caused by harmonics at some speeds, it does provide a quick, accurate method of predicting performance over most sections of the operating range. 12 refs., 11 figs.

Zero sequence blocking transformers for multi-pulse rectifier in aerospace applications

DEFF Research Database (Denmark)

Yao, Wenli; Blaabjerg, Frede; Zhang, Xiaobin

2014-01-01

The power electronics technology plays an even more important role in the aerospace applications of More Electric Aircrafts (MEA). AutoTransformer Rectifier Units (ATRU) have been widely adopted in aircrafts due to its simplicity and reliability. In this paper, Zero Sequence Blocking Transformers...... (ZSBT) are employed in the DC link to realize parallel rectifier bridges for ATRU, being the proposed 24-pulse rectifier. A star-connected autotransformer is used in this topology to divide the primary side voltage into four three-phase voltage groups, among which there is a phase shift of 15......°. The autotransformer then feeds the load through rectifier bridges, which are in parallel with ZSBTs. Compared to the traditional method that is using six interphase transformers to parallel the rectifier bridges; the proposed 24-pulse rectifier only requires four ZSBTs. This will contribute to a reduction of weight...

A silicon central pattern generator controls locomotion in vivo.

Science.gov (United States)

Vogelstein, R J; Tenore, F; Guevremont, L; Etienne-Cummings, R; Mushahwar, V K

2008-09-01

We present a neuromorphic silicon chip that emulates the activity of the biological spinal central pattern generator (CPG) and creates locomotor patterns to support walking. The chip implements ten integrate-and-fire silicon neurons and 190 programmable digital-to-analog converters that act as synapses. This architecture allows for each neuron to make synaptic connections to any of the other neurons as well as to any of eight external input signals and one tonic bias input. The chip's functionality is confirmed by a series of experiments in which it controls the motor output of a paralyzed animal in real-time and enables it to walk along a three-meter platform. The walking is controlled under closed-loop conditions with the aide of sensory feedback that is recorded from the animal's legs and fed into the silicon CPG. Although we and others have previously described biomimetic silicon locomotor control systems for robots, this is the first demonstration of a neuromorphic device that can replace some functions of the central nervous system in vivo.

Inhibition of cardiac inward rectifier currents by cationic amphiphilic drugs.

Science.gov (United States)

van der Heyden, M A G; Stary-Weinzinger, A; Sanchez-Chapula, J A

2013-09-01

Cardiac inward rectifier channels belong to three different classes of the KIR channel protein family. The KIR2.x proteins generate the classical inward rectifier current, IK1, while KIR3 and KIR6 members are responsible for the acetylcholine responsive and ATP sensitive inward rectifier currents IKAch and IKATP, respectively. Aberrant function of these channels has been correlated with severe cardiac arrhythmias, indicating their significant contribution to normal cardiac electrophysiology. A common feature of inward rectifier channels is their dependence on the lipid phosphatidyl-4,5-bisphospate (PIP2) interaction for functional activity. Cationic amphiphilic drugs (CADs) are one of the largest classes of pharmaceutical compounds. Several widely used CADs have been associated with inward rectifier current disturbances, and recent evidence points to interference of the channel-PIP2 interaction as the underlying mechanism of action. Here, we will review how six of these well known drugs, used for treatment in various different conditions, interfere in cardiac inward rectifier functioning. In contrast, KIR channel inhibition by the anionic anesthetic thiopental is achieved by a different mechanism of channel-PIP2 interference. We will discuss the latest basic science insights of functional inward rectifier current characteristics, recently derived KIR channel structures and specific PIP2-receptor interactions at the molecular level and provide insight in how these drugs interfere in the structure-function relationships.

A perturbation-based model for rectifier circuits

Directory of Open Access Journals (Sweden)

Vipin B. Vats

2006-01-01

Full Text Available A perturbation-theoretic analysis of rectifier circuits is presented. The governing differential equation of the half-wave rectifier with capacitor filter is analyzed by expanding the output voltage as a Taylor series with respect to an artificially introduced parameter in the nonlinearity of the diode characteristic as is done in quantum theory. The perturbation parameter introduced in the analysis is independent of the circuit components as compared to the method presented by multiple scales. The various terms appearing in the perturbation series are then modeled in the form of an equivalent circuit. This model is subsequently used in the analysis of full-wave rectifier. Matlab simulation results are included which confirm the validity of the theoretical formulations. Perturbation analysis acts a helpful tool in analyzing time-varying systems and chaotic systems.

Diode rectifier bridge-based structure for DFIG-based wind turbine

DEFF Research Database (Denmark)

Zhu, Rongwu; Chen, Zhe; Wu, Xiaojie

2015-01-01

This paper proposes a new structure for the doubly-fed induction generator (DFIG)-based wind turbine. The proposed structure consists of a DFIG controlled by a partial rated power converter in the rotor side, a three-phase diode rectifier bridge (DRB) connected to the stator, and a DC/AC full rated...

Wind Solar Hybrid System Rectifier Stage Topology Simulation

OpenAIRE

Anup M. Gakare; Subhash Kamdi

2014-01-01

This paper presents power-control strategies of a grid-connected hybrid generation system with versatile power transfer. The hybrid system allows maximum utilization of freely available renewable sources like wind and photovoltaic energies. This paper presents a new system configuration of the multi input rectifier stage for a hybrid wind and photovoltaic energy system. This configuration allows the two sources to supply the load simultaneously depending on the availability of...

Self-Biased Differential Rectifier with Enhanced Dynamic Range for Wireless Powering

KAUST Repository

Ouda, Mahmoud H.

2016-08-29

A self-biased, cross-coupled, differential rectifier is proposed with enhanced power-conversion efficiency over an extended range of input power. A prototype is designed for UHF 433MHz RF power-harvesting applications and is implemented using 0.18μm CMOS technology. The proposed rectifier architecture is compared to the conventional cross-coupled rectifier. It demonstrates an improvement of more than 40% in the rectifier power conversion efficiency (PCE) and an input power range extension of more than 50% relative to the conventional crosscoupled rectifier. A sensitivity of -15.2dBm (30μW) input power for 1V output voltage and a peak power-conversion efficiency of 65% are achieved for a 50kω load. © 2004-2012 IEEE.

Stability Improvements of an LCL-filter based Three-phase Active Rectifier

DEFF Research Database (Denmark)

Liserre, Marco; Dell'Aquila, Antonio; Blaabjerg, Frede

2002-01-01

Three-phase active rectifiers guarantee sinusoidal input currents and controllable dc voltage at the price of a high switching frequency ripple that can disturb and reduce efficiency of other EMI sensitive equipment connected to the grid. This problem could be solved choosing a high value...

Controlling the Nanoscale Patterning of AuNPs on Silicon Surfaces

Directory of Open Access Journals (Sweden)

Chris J. Allender

2013-03-01

Full Text Available This study evaluates the effectiveness of vapour-phase deposition for creating sub-monolayer coverage of aminopropyl triethoxysilane (APTES on silicon in order to exert control over subsequent gold nanoparticle deposition. Surface coverage was evaluated indirectly by observing the extent to which gold nanoparticles (AuNPs deposited onto the modified silicon surface. By varying the distance of the silicon wafer from the APTES source and concentration of APTES in the evaporating media, control over subsequent gold nanoparticle deposition was achievable to an extent. Fine control over AuNP deposition (AuNPs/μm2 however, was best achieved by adjusting the ionic concentration of the AuNP-depositing solution. Furthermore it was demonstrated that although APTES was fully removed from the silicon surface following four hours incubation in water, the gold nanoparticle-amino surface complex was stable under the same conditions. Atomic force microscopy (AFM and X-ray photoelectron spectroscopy (XPS were used to study these affects.

Automatic Control of Silicon Melt Level

Science.gov (United States)

Duncan, C. S.; Stickel, W. B.

1982-01-01

A new circuit, when combined with melt-replenishment system and melt level sensor, offers continuous closed-loop automatic control of melt-level during web growth. Installed on silicon-web furnace, circuit controls melt-level to within 0.1 mm for as long as 8 hours. Circuit affords greater area growth rate and higher web quality, automatic melt-level control also allows semiautomatic growth of web over long periods which can greatly reduce costs.

Low-Complexity Model Predictive Control of Single-Phase Three-Level Rectifiers with Unbalanced Load

DEFF Research Database (Denmark)

Ma, Junpeng; Song, Wensheng; Wang, Xiongfei

2018-01-01

The fluctuation of the neutral-point potential in single-phase three-level rectifiers leads to coupling between the line current regulation and dc-link voltage balancing, deteriorating the quality of line current. For addressing this issue, this paper proposes a low-complexity model predictive...

A passive UHF RFID tag with a dynamic-Vth-cancellation rectifier

International Nuclear Information System (INIS)

Shen Jinpeng; Wang Bo; Liu Shan; Wang Xin'an; Ruan Zhengkun; Li Shoucheng

2013-01-01

This paper presents a passive UHF RFID tag with a dynamic-V th -cancellation (DVC) rectifier. In the rectifier, the threshold voltages of MOSFETs are cancelled by applying gate bias voltages, which are dynamically changed according to the states of the MOSFETs. The DVC rectifier enables both low ON-resistance and small reverse leakage of the MOSFETs, resulting in high power conversion efficiency (PCE). An area-efficient demodulator with a novel average detector is also designed, which takes advantage of the rectifier's first stage as the envelope detector. The whole tag chip is implemented in a 0.18 μm CMOS process with a die size of 880 × 950 μm 2 . Measurement results show that the rectifier achieves a maximum PCE of 53.7% with 80 kΩ resistor load. (semiconductor integrated circuits)

Application data for the PLT stabilizing field rectifier

International Nuclear Information System (INIS)

Bronner, G.; Murray, J.G.; Oliaro, G.E.

1975-11-01

This paper describes the 12-pulse stabilizing field rectifier used for vertical field production in the Princeton Large Torus (PLT). It is essential that the rectifier be reliable, and protect itself from all faults including induced transient overvoltage produced by switching and plasma instabilities. To this end, computer simulations were run to insure protection under various fault conditions

Wireless power transmission for biomedical implants: The role of near-zero threshold CMOS rectifiers.

Science.gov (United States)

Mohammadi, Ali; Redoute, Jean-Michel; Yuce, Mehmet R

2015-01-01

Biomedical implants require an electronic power conditioning circuitry to provide a stable electrical power supply. The efficiency of wireless power transmission is strongly dependent on the power conditioning circuitry specifically the rectifier. A cross-connected CMOS bridge rectifier is implemented to demonstrate the impact of thresholds of rectifiers on wireless power transfer. The performance of the proposed rectifier is experimentally compared with a conventional Schottky diode full wave rectifier over 9 cm distance of air and tissue medium between the transmitter and receiver. The output voltage generated by the CMOS rectifier across a 1 KΩ resistive load is around twice as much as the Schottky rectifier.

A 13.56 MHz CMOS Active Rectifier With Switched-Offset and Compensated Biasing for Biomedical Wireless Power Transfer Systems.

Science.gov (United States)

Yan Lu; Wing-Hung Ki

2014-06-01

A full-wave active rectifier switching at 13.56 MHz with compensated bias current for a wide input range for wirelessly powered high-current biomedical implants is presented. The four diodes of a conventional passive rectifier are replaced by two cross-coupled PMOS transistors and two comparator- controlled NMOS switches to eliminate diode voltage drops such that high voltage conversion ratio and power conversion efficiency could be achieved even at low AC input amplitude |VAC|. The comparators are implemented with switched-offset biasing to compensate for the delays of active diodes and to eliminate multiple pulsing and reverse current. The proposed rectifier uses a modified CMOS peaking current source with bias current that is quasi-inversely proportional to the supply voltage to better control the reverse current over a wide AC input range (1.5 to 4 V). The rectifier was fabricated in a standard 0.35 μm CMOS N-well process with active area of 0.0651 mm(2). For the proposed rectifier measured at |VAC| = 3.0 V, the voltage conversion ratios are 0.89 and 0.93 for RL=500 Ω and 5 kΩ, respectively, and the measured power conversion efficiencies are 82.2% to 90.1% with |VAC| ranges from 1.5 to 4 V for RL=500 Ω.

An overview of self-switching diode rectifiers using green materials

Science.gov (United States)

Kasjoo, Shahrir Rizal; Zailan, Zarimawaty; Zakaria, Nor Farhani; Isa, Muammar Mohamad; Arshad, Mohd Khairuddin Md; Taking, Sanna

2017-09-01

A unipolar two-terminal nanodevice, known as the self-switching diode (SSD), has recently been demonstrated as a room-temperature rectifier at microwave and terahertz frequencies due to its nonlinear current-voltage characteristic. The planar architecture of SSD not only makes the fabrication process of the device faster, simpler and at a lower cost when compared with other rectifying diodes, but also allows the use of various materials to realize and fabricate SSDs. This includes the utilization of `green' materials such as organic and graphene thin films for environmental sustainability. This paper reviews the properties of current `green' SSD rectifiers with respect to their operating frequencies and rectifying performances, including responsivity and noise-equivalent power of the devices, along with the applications.

Control and data acquisition electronics for the CDF Silicon Vertex Detector

Energy Technology Data Exchange (ETDEWEB)

Turner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

1991-11-01

A control and data acquisition system has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules. 11 refs., 6 figs., 3 tabs.

Control and data acquisition electronics for the CDF Silicon Vertex Detector

International Nuclear Information System (INIS)

Turner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

1991-11-01

A control and data acquisition system has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules. 11 refs., 6 figs., 3 tabs

Control and data acquisition electronics for the CDF silicon vertex detector

International Nuclear Information System (INIS)

urner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

1992-01-01

This paper reports on a control and data acquisition system that has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules

Development of Op-Amp Based Piezoelectric Rectifier for Low Power Energy Harvesting Applications

Directory of Open Access Journals (Sweden)

Syazmie Bin Sepeeh Muhamad

2018-01-01

Full Text Available In this study, the development of operational amplifier (op-amp based rectifier for piezoelectric energy harvesting applications was studied. The two stage op-amp full wave rectifier was used to convert the AC signal to DC signal voltage received by piezoelectric devices. The inverted half wave rectifier integrated with full wave rectifier were designed and simulated using MultiSIM software. The circuit was then fabricated onto a printed circuit board (PCB, using standard fabrication process. The achievement of this rectifier was able to boost up the maximum voltage of 5 V for input voltage of 800 mV. The output of the rectifier was in DC signal after the rectification by the op-amp. In term of power, the power dissipation was reduced consequently the waste power decreases. Future work includes optimization of the rectifying circuit to operate more efficiently can be made to increase the efficiency of the devices.

Cardiac Delayed Rectifier Potassium Channels in Health and Disease

Science.gov (United States)

Chen, Lei; Sampson, Kevin J.; Kass, Robert S.

2016-01-01

Cardiac delayed rectifier potassium channels conduct outward potassium currents during the plateau phase of action potentials and play pivotal roles in cardiac repolarization. These include IKs, IKr and the atrial specific IKur channels. In this chapter, we will review the molecular identities and biophysical properties of these channels. Mutations in the genes encoding delayed rectifiers lead to loss- or gain-of-function phenotypes, disrupt normal cardiac repolarization and result in various cardiac rhythm disorders, including congenital Long QT Syndrome, Short QT Syndrome and familial atrial fibrillation. We will also discuss the possibility and prospect of using delayed rectifier channels as therapeutic targets to manage cardiac arrhythmia. PMID:27261823

Cardiac Delayed Rectifier Potassium Channels in Health and Disease.

Science.gov (United States)

Chen, Lei; Sampson, Kevin J; Kass, Robert S

2016-06-01

Cardiac delayed rectifier potassium channels conduct outward potassium currents during the plateau phase of action potentials and play pivotal roles in cardiac repolarization. These include IKs, IKr and the atrial specific IKur channels. In this article, we will review their molecular identities and biophysical properties. Mutations in the genes encoding delayed rectifiers lead to loss- or gain-of-function phenotypes, disrupt normal cardiac repolarization and result in various cardiac rhythm disorders, including congenital Long QT Syndrome, Short QT Syndrome and familial atrial fibrillation. We will also discuss the prospect of using delayed rectifier channels as therapeutic targets to manage cardiac arrhythmia. Copyright © 2016 Elsevier Inc. All rights reserved.

A metamaterial electromagnetic energy rectifying surface with high harvesting efficiency

Science.gov (United States)

Duan, Xin; Chen, Xing; Zhou, Lin

2016-12-01

A novel metamaterial rectifying surface (MRS) for electromagnetic energy capture and rectification with high harvesting efficiency is presented. It is fabricated on a three-layer printed circuit board, which comprises an array of periodic metamaterial particles in the shape of mirrored split rings, a metal ground, and integrated rectifiers employing Schottky diodes. Perfect impedance matching is engineered at two interfaces, i.e. one between free space and the surface, and the other between the metamaterial particles and the rectifiers, which are connected through optimally positioned vias. Therefore, the incident electromagnetic power is captured with almost no reflection by the metamaterial particles, then channeled maximally to the rectifiers, and finally converted to direct current efficiently. Moreover, the rectifiers are behind the metal ground, avoiding the disturbance of high power incident electromagnetic waves. Such a MRS working at 2.45 GHz is designed, manufactured and measured, achieving a harvesting efficiency up to 66.9% under an incident power density of 5 mW/cm2, compared with a simulated efficiency of 72.9%. This high harvesting efficiency makes the proposed MRS an effective receiving device in practical microwave power transmission applications.

A metamaterial electromagnetic energy rectifying surface with high harvesting efficiency

Directory of Open Access Journals (Sweden)

Xin Duan

2016-12-01

Full Text Available A novel metamaterial rectifying surface (MRS for electromagnetic energy capture and rectification with high harvesting efficiency is presented. It is fabricated on a three-layer printed circuit board, which comprises an array of periodic metamaterial particles in the shape of mirrored split rings, a metal ground, and integrated rectifiers employing Schottky diodes. Perfect impedance matching is engineered at two interfaces, i.e. one between free space and the surface, and the other between the metamaterial particles and the rectifiers, which are connected through optimally positioned vias. Therefore, the incident electromagnetic power is captured with almost no reflection by the metamaterial particles, then channeled maximally to the rectifiers, and finally converted to direct current efficiently. Moreover, the rectifiers are behind the metal ground, avoiding the disturbance of high power incident electromagnetic waves. Such a MRS working at 2.45 GHz is designed, manufactured and measured, achieving a harvesting efficiency up to 66.9% under an incident power density of 5 mW/cm2, compared with a simulated efficiency of 72.9%. This high harvesting efficiency makes the proposed MRS an effective receiving device in practical microwave power transmission applications.

Deliberately dispatched SCR firing angles for harmonic mitigation in three-phase multi-drive systems without communication

DEFF Research Database (Denmark)

Yang, Yongheng; Davari, Pooya; Zare, Firuz

2016-01-01

Adjustable Speed Drives (ASDs) are widely used in threephase multi-drive applications in industry, where low-cost Diode Rectifiers (DRs) or Silicon-Controlled Rectifiers (SCRs) are still employed as the front-ends in practice, also for simplicity. However, the associated harmonics are produced...

Automatically controlled facilities for irradiation of silicon crystals at the Rossendorf Research Reactor

International Nuclear Information System (INIS)

Ross, R.

1988-01-01

This report describes the facilities for neutron transmutation doping of silicon in GDR. The irradiation of silicon single crystals began at Rossendorf in 1978 with simple equipment. Only a small amount of silicon could be irradiated in it. The fast increasing need of NTD-silicon made it necessary to design and construct new and better facilities. The new facilities are capable of irradiating silicon from 2'' to 3'' in diameter. The irradiation process takes place automatically with the assistance of a computer. Material produced has an axial homogeneity of ± 7%. Irradiation riggs, techniques, irradiation control and quality control are discussed. (author). 4 figs

WASTE MINIMIZATION ASSESSMENT FOR A MANUFACTURER OF SILICON-CONTROLLED RECTIFIERS AND SCHOTTKY RECTIFIERS

Science.gov (United States)

The U.S. Environmental Protection Agency (EPA) has funded a pilot project to assist small- and medium-size manufacturers who want to minimize their generation of waste but who lack the expertise to do so. In an effort to assist these manufacturers Waste Minimization Assessment Ce...

The energizing of a NMR superconducting coil by a superconducting rectifier

International Nuclear Information System (INIS)

Sikkenga, J.; ten Kate, H.H.J.; van der Klundert, L.J.M.; Knoben, J.; Kraaij, G.J.; Spuorenberg, C.J.G.

1985-01-01

NMR magnets require a good homogeneity within a certain volume and an excellent field stability. The homogeneity can be met using a superconducting shim coil system. The field stability requires a constant current, although in many cases the current decay time constant is too low, due to imperfections in the superconducting wire and joints. This can be overcome using a rectifier. The rectifier can also be used to load the coil. The combination and interaction of the superconducting NMR coil (2.0 Tesla and 0.35 m cold bore) and the rectifier (20 W / 1 kA) is tested. The safety of the system is discussed. The shim coil system can compensate the strayfield of the rectifier. The field decay compensation will be discussed

Design Criteria for DC Link Filters in a Synchronous Generator-Phase Controlled Rectifier-Filter-Load System

National Research Council Canada - National Science Library

Greseth, Gregory

1999-01-01

.... The proposed Navy DC Zonal Electrical Distribution System (DC ZEDS) being designed for the new DD-21 utilizes a rectified ac generator output which is filtered and stepped to usable voltages by local dc-dc converters...

InGaAs-based planar barrier diode as microwave rectifier

Science.gov (United States)

Farhani Zakaria, Nor; Rizal Kasjoo, Shahrir; Zailan, Zarimawaty; Mohamad Isa, Muammar; Arshad, Mohd Khairuddin Md; Taking, Sanna

2018-06-01

In this report, we proposed and simulated a new planar nonlinear rectifying device fabricated using InGaAs substrate and referred to as a planar barrier diode (PBD). Using an asymmetrical inverse-arrowhead-shaped structure between the electrodes, a nonuniform depletion region is developed, which creates a triangular energy barrier in the conducting channel. This barrier is voltage dependent and can be controlled by the applied voltage across the PBD, thus resulting in nonlinear diode-like current–voltage characteristics; thus it can be used as a rectifying device. The PBD’s working principle is explained using thermionic emission theory. Furthermore, by varying the PBD’s geometric design, the asymmetry of the current–voltage characteristics can be optimized to realize superior rectification performance. By employing the optimized structural parameters, the obtained cut-off frequency of the device was approximately 270 GHz with a curvature coefficient peak of 14 V‑1 at a low DC bias voltage of 50 mV.

Power converter for raindrop energy harvesting application: Half-wave rectifier

Science.gov (United States)

Izrin, Izhab Muhammad; Dahari, Zuraini

2017-10-01

Harvesting raindrop energy by capturing vibration from impact of raindrop have been explored extensively. Basically, raindrop energy is generated by converting the kinetic energy of raindrop into electrical energy by using polyvinylidene fluoride (PVDF) piezoelectric. In this paper, a power converter using half-wave rectifier for raindrop harvesting energy application is designed and proposed to convert damping alternating current (AC) generated by PVDF into direct current (DC). This research presents parameter analysis of raindrop simulation used in the experiment and resistive load effect on half-wave rectifier converter. The experiment is conducted by using artificial raindrop from the height of 1.3 m to simulate the effect of different resistive load on the output of half-wave rectifier converter. The results of the 0.68 MΩ resistive load showed the best performance of the half-wave rectifier converter used in raindrop harvesting energy system, which generated 3.18 Vaverage. The peak instantaneous output generated from this experiment is 15.36 µW.

Fully superconducting rectifiers and fluxpumps

International Nuclear Information System (INIS)

Klundert, L.J.M. van de; Kate, H.H.J. ten

1981-01-01

Reviewing the basic principles of operation of fluxpumps, mechanical devices such as flux compressors and dynamos are discussed and electrically driven rectifier fluxpumps, with which current levels of over 10 KA can be obtained with high performance, are considered. 132 references. (U.K.)

An experimental study on the effects of rectifiers on fluid flow

International Nuclear Information System (INIS)

Kawashima, G.

1985-01-01

This paper reports studies of various combinations of rectifiers and rectifying nets to measure fluid flow and in particular, the measurement of the flow through an orifice or nozzle, since they help to shorten the inlet length

3-D printed 2.4 GHz rectifying antenna for wireless power transfer applications

Science.gov (United States)

Skinner, Matthew

In this work, a 3D printed rectifying antenna that operates at the 2.4GHz WiFi band was designed and manufactured. The printed material did not have the same properties of bulk material, so the printed materials needed to be characterized. The antenna and rectifying circuit was printed out of Acrylonitrile Butadiene Styrene (ABS) filament and a conductive silver paste, with electrical components integrated into the circuit. Before printing the full rectifying antenna, each component was printed and evaluated. The printed antenna operated at the desired frequency with a return loss of -16 dBm with a bandwidth of 70MHz. The radiation pattern was measured in an anechoic chamber with good matching to the model. The rectifying circuit was designed in Ansys Circuit Simulation using Schottky diodes to enable the circuit to operate at lower input power levels. Two rectifying circuits were manufactured, one by printing the conductive traces with silver ink, and one with traces made from copper. The printed silver ink is less conductive than the bulk copper and therefore the output voltage of the printed rectifier was lower than the copper circuit. The copper circuit had an efficiency of 60% at 0dBm and the printed silver circuit had an efficiency of 28.6% at 0dBm. The antenna and rectifying circuits were then connected to each other and the performance was compared to a fully printed integrated rectifying antenna. The rectifying antennas were placed in front of a horn antenna while changing the power levels at the antenna. The efficiency of the whole system was lower than the individual components but an efficiency of 11% at 10dBm was measured.

Thermal analysis and improvement of cascode GaN device package for totem-pole bridgeless PFC rectifier

International Nuclear Information System (INIS)

She, Shuojie; Zhang, Wenli; Liu, Zhengyang; Lee, Fred C.; Huang, Xiucheng; Du, Weijing; Li, Qiang

2015-01-01

The totem-pole bridgeless power factor correction (PFC) rectifier has a simpler topology and higher efficiency than other boost-type bridgeless PFC rectifiers. Its promising performance is enabled by using high-voltage gallium nitride (GaN) high-electron-mobility transistors, which have considerably better figures of merit (e.g., lower reverse recovery charges and less switching losses) than the state-of-the-art silicon metal-oxide-semiconductor field-effect transistors. Cascode GaN devices in traditional packages, i.e., the TO-220 and power quad flat no-lead, are used in the totem-pole PFC boost rectifier. But the parasitic inductances induced by the traditional packages not only significantly deteriorate the switching characteristics of the discrete GaN device but also adversely affect the performance of the built PFC rectifier. A new stack-die packaging structure with an embedded capacitor has been introduced and proven to be efficient in reducing parasitic ringing at the turn-off transition and achieving true zero-voltage-switching turn-on. However, the thermal dissipation capability of the device packaged in this configuration becomes a limitation on further pushing the operating frequency and the output current level for high-efficiency power conversion. This paper focuses on the thermal analysis of the cascode GaN devices in different packages and the GaN-based multichip module used in a two-phase totem-pole bridgeless PFC boost rectifier. A series of thermal models are built based on the actual structures and materials of the packaged devices to evaluate their thermal performance. Finite element analysis (FEA) simulation results of the cascode GaN device in a flip-chip format demonstrate the possibility of increasing the device switching speed while maintaining the peak temperature of the device below 125 °C. Thermal analysis of the GaN-based power module in a very similar structure is also conducted using the FEA method. Experimental data measured using

Tunable all-optical plasmonic rectifier in nanoscale metal-insulator-metal waveguides.

Science.gov (United States)

Xu, Yi; Wang, Xiaomeng; Deng, Haidong; Guo, Kangxian

2014-10-15

We propose a tunable all-optical plasmonic rectifier based on the nonlinear Fano resonance in a metal-insulator-metal plasmonic waveguide and cavities coupling system. We develop a theoretical model based on the temporal coupled-mode theory to study the device physics of the nanoscale rectifier. We further demonstrate via the finite difference time domain numerical experiment that our idea can be realized in a plasmonic system with an ultracompact size of ~120×800  nm². The tunable plasmonic rectifier could facilitate the all-optical signal processing in nanoscale.

Electron transport in InAs/AlGaSb ballistic rectifiers

International Nuclear Information System (INIS)

Maemoto, Toshihiko; Koyama, Masatoshi; Furukawa, Masashi; Takahashi, Hiroshi; Sasa, Shigehiko; Inoue, Masataka

2006-01-01

Nonlinear transport properties of a ballistic rectifier fabricated from InAs/AlGaSb heterostructures are reported. The operation of the ballistic rectifier is based on the guidance of carriers by a square anti-dot structure. The structure was defined by electron beam lithography and wet chemical etching. The DC characteristics and magneto-transport properties of the ballistic rectifier have been measured at 77 K and 4.2 K. Rectification effects relying on the ballistic transport were observed. From the four-terminal resistance measured at low magnetic fields, we also observed magneto-resistance fluctuations corresponding to the electron trajectories and symmetry-breaking electron scattering, which are influenced by the magnetic field strength

New analysis and design of a RF rectifier for RFID and implantable devices.

Science.gov (United States)

Liu, Dong-Sheng; Li, Feng-Bo; Zou, Xue-Cheng; Liu, Yao; Hui, Xue-Mei; Tao, Xiong-Fei

2011-01-01

New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from -15 dBm to -4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitable to passive UHF RFID tag IC and implantable devices.

Design and implementation of high performance direct power control of three-phase PWM rectifier, via fuzzy and PI controller for output voltage regulation

International Nuclear Information System (INIS)

Bouafia, Abdelouahab; Krim, Fateh; Gaubert, Jean-Paul

2009-01-01

This paper proposes direct power control (DPC) for three-phase PWM rectifiers using a new switching table, without line voltage sensors. The instantaneous active and reactive powers, directly controlled by selecting the optimum state of the converter, are used as the PWM control variables instead of the phase line currents being used. The main goal of the control system is to maintain the dc-bus voltage at the required level, while input currents drawn from the power supply should be sinusoidal and in phase with respective phase voltages to satisfy the unity power factor (UPF) operation. Conventional PI and a designed fuzzy logic-based controller, in the dc-bus voltage control loop, have been used to provide active power command. A dSPACE based experimental system was developed to verify the validity of the proposed DPC. The steady-state, and dynamic results illustrating the operation and performance of the proposed control scheme are presented. As a result, it was confirmed that the novel DPC is much better than the classical one. Line currents very close to sinusoidal waveforms (THD < 2%) and good regulation of dc-bus voltage are achieved using PI or fuzzy controller. Moreover, fuzzy logic controller gives excellent performance in transient state, a good rejection of impact load disturbance, and a good robustness

Noise rectifier based on the two-dimensional electron gas

Energy Technology Data Exchange (ETDEWEB)

Cheremisin, M. V., E-mail: tcher_max@yahoo.com [Ioffe Physical-Technical Institute (Russian Federation)

2012-09-15

The dc voltage observed at low temperatures in a 2D electron sample in the absence of noticeable external excitations [1] is accounted by the Schottky contact rectification of the noise generated in the measuring circuit. The rectified voltage is shown to depend on the asymmetry of the contact pair. The dependence of the rectified voltage on the noise amplitude first follows the trivial quadratic law, then exhibits a nearly linear behavior, and finally, levels off.

A high-power magnetically switched superconducting rectifier operating at 5 Hz

NARCIS (Netherlands)

Mulder, G.B.J.; Krooshoop, Hendrikus J.G.; Nijhuis, Arend; ten Kate, Herman H.J.; van de Klundert, L.J.M.

1987-01-01

Above a certain current level, the use of a superconducting rectifier as a cryogenic current source offers advantages compared to the use of a power supply at room temperature which requires large current feed-throughs into the cryostat. In some cases, the power of such a rectifier is immaterial,

G-protein-coupled inward rectifier potassium current contributes to ventricular repolarization

DEFF Research Database (Denmark)

Liang, Bo; Nissen, Jakob D; Laursen, Morten

2014-01-01

The purpose of this study was to investigate the functional role of G-protein-coupled inward rectifier potassium (GIRK) channels in the cardiac ventricle.......The purpose of this study was to investigate the functional role of G-protein-coupled inward rectifier potassium (GIRK) channels in the cardiac ventricle....

Balanced Current Control Strategy for Current Source Rectifier Stage of Indirect Matrix Converter under Unbalanced Grid Voltage Conditions

Directory of Open Access Journals (Sweden)

Yeongsu Bak

2016-12-01

Full Text Available This paper proposes a balanced current control strategy for the current source rectifier (CSR stage of an indirect matrix converter (IMC under unbalanced grid voltage conditions. If the three-phase grid connected to the voltage source inverter (VSI of the IMC has unbalanced voltage conditions, it affects the currents of the CSR stage and VSI stage, and the currents are distorted. Above all, the distorted currents of the CSR stage cause instability in the overall system, which can affect the life span of the system. Therefore, in this paper, a control strategy for balanced currents in the CSR stage is proposed. To achieve balanced currents in the CSR stage, the VSI stage should receive DC power without ripple components from the CSR stage. This is implemented by controlling the currents in the VSI stage. Therefore, the proposed control strategy decouples the positive and negative phase-sequence components existing in the unbalanced voltages and currents of the VSI stage. Using the proposed control strategy under unbalanced grid voltage conditions, the stability and life span of the overall system can be improved. The effectiveness of the proposed control strategy is verified by simulation and experimental results.

Changes in Inward Rectifier K+ Channels in Hepatic Stellate Cells During Primary Culture

Science.gov (United States)

Lee, Dong Hyeon; Kong, In Deok; Lee, Joong-Woo

2008-01-01

Purpose This study examined the expression and function of inward rectifier K+ channels in cultured rat hepatic stellate cells (HSC). Materials and Methods The expression of inward rectifier K+ channels was measured using real-time RT-PCR, and electrophysiological properties were determined using the gramicidin-perforated patch-clamp technique. Results The dominant inward rectifier K+ channel subtypes were Kir2.1 and Kir6.1. These dominant K+ channel subtypes decreased significantly during the primary culture throughout activation process. HSC can be classified into two subgroups: one with an inward-rectifying K+ current (type 1) and the other without (type 2). The inward current was blocked by Ba2+ (100 µM) and enhanced by high K+ (140 mM), more prominently in type 1 HSC. There was a correlation between the amplitude of the Ba2+-sensitive current and the membrane potential. In addition, Ba2+ (300 µM) depolarized the membrane potential. After the culture period, the amplitude of the inward current decreased and the membrane potential became depolarized. Conclusion HSC express inward rectifier K+ channels, which physiologically regulate membrane potential and decrease during the activation process. These results will potentially help determine properties of the inward rectifier K+ channels in HSC as well as their roles in the activation process. PMID:18581597

Superhigh-frequency circuit for the EPR spectrometer with rectifier screening

International Nuclear Information System (INIS)

Zhizhchenko, G.A.; Tsvirko, L.V.

1983-01-01

The hamodyne SHF circuit of a 3-cm EPR spectrometer with a reflecting resonator is described. The optimum operating mode of SHF-rectifier at a constant phase difference is automatically assured in the circuit. The circuit employs a reflecting p-i-n- attenuator and a SHF-rectifier sereen which simplify the spectrometer tuming. The circuit is used in a miniature EPR radiospectrometer Minsk EPR-6-type

Thirty-six pulse rectifier scheme based on zigzag auto-connected transformer

OpenAIRE

Xiao-Qiang Chen; Chun-Ling Hao; Hao Qiu; Min Li

2016-01-01

In this paper, a low kilo-volt-ampere rating zigzag connected autotransformer based 36-pulse rectifier system supplying vector controlled induction motor drives (VCIMD) is designed, modeled and simulated. Detailed design procedure and magnetic rating calculation of the proposed autotransformer and interphase reactor is studied. Moreover, the design process of the autotransformer is modified to make it suitable for retrofit applications. Simulation results confirm that the proposed 36-pulse re...

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

Energy Technology Data Exchange (ETDEWEB)

Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2015-12-14

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

Artificial neural networks for control of a grid-connected rectifier/inverter under disturbance, dynamic and power converter switching conditions.

Science.gov (United States)

Li, Shuhui; Fairbank, Michael; Johnson, Cameron; Wunsch, Donald C; Alonso, Eduardo; Proaño, Julio L

2014-04-01

Three-phase grid-connected converters are widely used in renewable and electric power system applications. Traditionally, grid-connected converters are controlled with standard decoupled d-q vector control mechanisms. However, recent studies indicate that such mechanisms show limitations in their applicability to dynamic systems. This paper investigates how to mitigate such restrictions using a neural network to control a grid-connected rectifier/inverter. The neural network implements a dynamic programming algorithm and is trained by using back-propagation through time. To enhance performance and stability under disturbance, additional strategies are adopted, including the use of integrals of error signals to the network inputs and the introduction of grid disturbance voltage to the outputs of a well-trained network. The performance of the neural-network controller is studied under typical vector control conditions and compared against conventional vector control methods, which demonstrates that the neural vector control strategy proposed in this paper is effective. Even in dynamic and power converter switching environments, the neural vector controller shows strong ability to trace rapidly changing reference commands, tolerate system disturbances, and satisfy control requirements for a faulted power system.

Reduction of Harmonics by 18-Pulse Rectifier

Directory of Open Access Journals (Sweden)

Stanislav Kocman

2008-01-01

Full Text Available Operation of such electrical devices as data processing and electronics devices, adjustable speed drives or uninterruptible power supply can cause problems by generating harmonic currents into the network, from which they are supplied. Effects of these harmonic currents are various, they can get worse the quality of supply voltage in the network or to have negative influences on devices connected to this network. There are various technical solutions for reduction of harmonics. One of them is using of multi-pulse rectifiers, whereas the 18-pulse rectifier in the structure of adjustable speed drive is briefly presented in this paper including some results of its behaviour. The examined experimental measurements confirmed its very good efficiency in the harmonic mitigation.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Boosting the signal: Endothelial inward rectifier K+ channels.

Science.gov (United States)

Jackson, William F

2017-04-01

Endothelial cells express a diverse array of ion channels including members of the strong inward rectifier family composed of K IR 2 subunits. These two-membrane spanning domain channels are modulated by their lipid environment, and exist in macromolecular signaling complexes with receptors, protein kinases and other ion channels. Inward rectifier K + channel (K IR ) currents display a region of negative slope conductance at membrane potentials positive to the K + equilibrium potential that allows outward current through the channels to be activated by membrane hyperpolarization, permitting K IR to amplify hyperpolarization induced by other K + channels and ion transporters. Increases in extracellular K + concentration activate K IR allowing them to sense extracellular K + concentration and transduce this change into membrane hyperpolarization. These properties position K IR to participate in the mechanism of action of hyperpolarizing vasodilators and contribute to cell-cell conduction of hyperpolarization along the wall of microvessels. The expression of K IR in capillaries in electrically active tissues may allow K IR to sense extracellular K + , contributing to functional hyperemia. Understanding the regulation of expression and function of microvascular endothelial K IR will improve our understanding of the control of blood flow in the microcirculation in health and disease and may provide new targets for the development of therapeutics in the future. © 2016 John Wiley & Sons Ltd.

Torsion angle dependence of the rectifying performance in molecular device with asymmetrical anchoring groups

International Nuclear Information System (INIS)

Wang, L.H.; Guo, Y.; Tian, C.F.; Song, X.P.; Ding, B.J.

2010-01-01

Using first-principles density functional theory and nonequilibrium Green's function formalism, we investigate the effect of torsion angle on the rectifying characteristics of 4'-thiolate-biphenyl-4-dithiocarboxylate sandwiched between two Au(111) electrodes. The results show that the torsion angle has an evident influence on rectifying performance of such devices. By increasing the dihedral angle between two phenyl rings, namely changing the magnitude of the intermolecular coupling effect, a different rectifying behavior can be observed in these systems. Our findings highlight that the rectifying characteristics are intimately related to dihedral angles and can provide fundamental guidelines for the design of functional molecular devices.

Study of 18-Pulse Rectifier Utilizing Hexagon Connected 3-Phase to 9-Phase Transformer

Directory of Open Access Journals (Sweden)

Ahmad Saudi Samosir

2008-04-01

Full Text Available The 18-pulse converter, using Y or -connected differential autotransformer, is very interesting since it allows natural high power factor correction. The lowest input current harmonic components are the 17th and 19th. The Transformer is designed to feed three six-pulse bridge rectifiers displaced in phase by 200. This paper present a high power factor three-phase rectifier bases on 3-phase to 9-phase transformer and 18-pulse rectifier. The 9-phase polygon-connected transformer followed by 18-pulse diode rectifiers ensures the fundamental concept of natural power factor correction. Simulation results to verify the proposed concept are shown in this paper.

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

Science.gov (United States)

Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

2018-04-16

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

Detection of vortex-core dynamics using current-induced self-bistable rectifying effect

International Nuclear Information System (INIS)

Goto, M; Hata, H; Yamaguchi, A; Miyajima, H; Nozaki, Y; Nakatani, Y; Yamaoka, T

2011-01-01

A magnetic vortex core confined in a micron-scale magnetic disk is resonantly excited by spin-polarized radio-frequency (rf) current and rf field. We show that rectifying voltage spectra caused by the vortex core resonance is dependent on the core polarity. Rectifying voltage spectra are given by the superposition of the polarity-dependent term and the polarity-independent term. The sign of the polarity-dependent rectifying voltage reverses when the sign of polarity P or external field H is reversed. This experimental result can be explained by the anisotropic magnetoresistance effect caused by the vortex core motion.

Solid state thermal rectifier

Science.gov (United States)

None

2016-07-05

Thermal rectifiers using linear nanostructures as core thermal conductors have been fabricated. A high mass density material is added preferentially to one end of the nanostructures to produce an axially non-uniform mass distribution. The resulting nanoscale system conducts heat asymmetrically with greatest heat flow in the direction of decreasing mass density. Thermal rectification has been demonstrated for linear nanostructures that are electrical insulators, such as boron nitride nanotubes, and for nanostructures that are conductive, such as carbon nanotubes.

The ALICE Silicon Pixel Detector Control and Calibration Systems

CERN Document Server

Calì, Ivan Amos; Manzari, Vito; Stefanini, Giorgio

2008-01-01

The work presented in this thesis was carried out in the Silicon Pixel Detector (SPD) group of the ALICE experiment at the Large Hadron Collider (LHC). The SPD is the innermost part (two cylindrical layers of silicon pixel detec- tors) of the ALICE Inner Tracking System (ITS). During the last three years I have been strongly involved in the SPD hardware and software development, construction and commissioning. This thesis is focused on the design, development and commissioning of the SPD Control and Calibration Systems. I started this project from scratch. After a prototyping phase now a stable version of the control and calibration systems is operative. These systems allowed the detector sectors and half-barrels test, integration and commissioning as well as the SPD commissioning in the experiment. The integration of the systems with the ALICE Experiment Control System (ECS), DAQ and Trigger system has been accomplished and the SPD participated in the experimental December 2007 commissioning run. The complex...

A novel approach to determine the interphase transformer inductance of 18 pulse rectifiers

International Nuclear Information System (INIS)

Sefa, Ibrahim; Altin, Necmi

2009-01-01

The interphase transformer inductance seriously affects the performance of 18 pulse rectifiers. Low inductance values cause non-characteristic harmonics whereas high inductance values increase the rectifier cost and size. Hence, determination of the interphase transformer inductance value is an important problem in the design of 18 pulse rectifiers. In this paper, an approach to determine the optimum inductance value of an interphase transformer is proposed and a practical formula is introduced. The proposed approach has been validated with simulation and experimental studies carried out with designed capacitive loaded autotransformer based 18 pulse rectifier for different IPT inductance values at different load levels. Experimental and simulation results show that cost effective interphase transformer inductance value can be determined with the proposed approach and this value reduces the line current harmonics and improves power factor drastically.

An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

Science.gov (United States)

Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

A Theoretical Investigation on Rectifying Performance of a Single Motor Molecular Device

International Nuclear Information System (INIS)

Lei Hui; Tan Xun-Qiong

2015-01-01

We report ab initio calculations of the transport behavior of a phenyl substituted molecular motor. The calculated results show that the transport behavior of the device is sensitive to the rotation degree of the rotor part. When the rotor part is parallel with the stator part, a better rectifying performance can be found in the current-voltage curve. However, when the rotor part revolves to vertical with the stator part, the currents in the positive bias region decrease slightly. More importantly, the rectifying performance disappears. Thus this offers us a new method to modulate the rectifying behavior in molecular devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Electric vehicle battery charging algorithm using PMSM windings and an inverter as an active rectifier

DEFF Research Database (Denmark)

Zaja, Mario; Oprea, Matei-lon; Suárez, Carlos Gómez

2014-01-01

for battery charging. Alternatively, charging could be done using the motor windings as grid side inductors and controlling the inverter to operate as an active boost rectifier. The challenge in this approach is the unequal phase inductances which depend on the rotor position. Another problem appears when...... an integrated charger control algorithm to charge the battery through a permanent magnet synchronous machine (PMSM) windings....

Current and Voltage Conveyors in Current- and Voltage-Mode Precision Full-Wave Rectifiers

Directory of Open Access Journals (Sweden)

J. Koton

2011-04-01

Full Text Available In this paper new versatile precision full-wave rectifiers using current and/or voltage conveyors as active elements and two diodes are presented. The performance of these circuit solutions is analysed and compared to the opamp based precision rectifier. To analyze the behavior of the functional blocks, the frequency dependent RMS error and DC transient value are evaluated for different values of input voltage amplitudes. Furthermore, experimental results are given that show the feasibilities of the conveyor based rectifiers superior to the corresponding operational amplifier based topology.

Polycrystalline silicon availability for photovoltaic and semiconductor industries

Science.gov (United States)

Ferber, R. R.; Costogue, E. N.; Pellin, R.

1982-01-01

Markets, applications, and production techniques for Siemens process-produced polycrystalline silicon are surveyed. It is noted that as of 1982 a total of six Si materials suppliers were servicing a worldwide total of over 1000 manufacturers of Si-based devices. Besides solar cells, the Si wafers are employed for thyristors, rectifiers, bipolar power transistors, and discrete components for control systems. An estimated 3890 metric tons of semiconductor-grade polycrystalline Si will be used in 1982, and 6200 metric tons by 1985. Although the amount is expected to nearly triple between 1982-89, research is being carried out on the formation of thin films and ribbons for solar cells, thereby eliminating the waste produced in slicing Czolchralski-grown crystals. The free-world Si production in 1982 is estimated to be 3050 metric tons. Various new technologies for the formation of polycrystalline Si at lower costs and with less waste are considered. New entries into the industrial Si formation field are projected to produce a 2000 metric ton excess by 1988.

Theoretical study on the rectifying performance of organoimido derivatives of hexamolybdates.

Science.gov (United States)

Wen, Shizheng; Yang, Guochun; Yan, Likai; Li, Haibin; Su, Zhongmin

2013-02-25

We design a new type of molecular diode, based on the organoimido derivatives of hexamolybdates, by exploring the rectifying performances using density functional theory combined with the non-equilibrium Green's function. Asymmetric current-voltage characteristics were obtained for the models with an unexpected large rectification ratio. The rectifying behavior can be understood by the asymmetrical shift of the transmission peak observed under different polarities. It is interesting to find that the preferred electron-transport direction in our studied system is different from that of the organic D-bridge-A system. The results show that the studied organic-inorganic hybrid systems have an intrinsically robust rectifying ratio, which should be taken into consideration in the design of the molecular diodes. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison between phase-shift full-bridge converters with noncoupled and coupled current-doubler rectifier.

Science.gov (United States)

Tsai, Cheng-Tao; Su, Jye-Chau; Tseng, Sheng-Yu

2013-01-01

This paper presents comparison between phase-shift full-bridge converters with noncoupled and coupled current-doubler rectifier. In high current capability and high step-down voltage conversion, a phase-shift full-bridge converter with a conventional current-doubler rectifier has the common limitations of extremely low duty ratio and high component stresses. To overcome these limitations, a phase-shift full-bridge converter with a noncoupled current-doubler rectifier (NCDR) or a coupled current-doubler rectifier (CCDR) is, respectively, proposed and implemented. In this study, performance analysis and efficiency obtained from a 500 W phase-shift full-bridge converter with two improved current-doubler rectifiers are presented and compared. From their prototypes, experimental results have verified that the phase-shift full-bridge converter with NCDR has optimal duty ratio, lower component stresses, and output current ripple. In component count and efficiency comparison, CCDR has fewer components and higher efficiency at full load condition. For small size and high efficiency requirements, CCDR is relatively suitable for high step-down voltage and high efficiency applications.

Comparison between Phase-Shift Full-Bridge Converters with Noncoupled and Coupled Current-Doubler Rectifier

Directory of Open Access Journals (Sweden)

Cheng-Tao Tsai

2013-01-01

Full Text Available This paper presents comparison between phase-shift full-bridge converters with noncoupled and coupled current-doubler rectifier. In high current capability and high step-down voltage conversion, a phase-shift full-bridge converter with a conventional current-doubler rectifier has the common limitations of extremely low duty ratio and high component stresses. To overcome these limitations, a phase-shift full-bridge converter with a noncoupled current-doubler rectifier (NCDR or a coupled current-doubler rectifier (CCDR is, respectively, proposed and implemented. In this study, performance analysis and efficiency obtained from a 500 W phase-shift full-bridge converter with two improved current-doubler rectifiers are presented and compared. From their prototypes, experimental results have verified that the phase-shift full-bridge converter with NCDR has optimal duty ratio, lower component stresses, and output current ripple. In component count and efficiency comparison, CCDR has fewer components and higher efficiency at full load condition. For small size and high efficiency requirements, CCDR is relatively suitable for high step-down voltage and high efficiency applications.

Fast switching wideband rectifying circuit for future RF energy harvesting

Science.gov (United States)

Asmeida, Akrem; Mustam, Saizalmursidi Md; Abidin, Z. Z.; Ashyap, A. Y. I.

2017-09-01

This paper presents the design and simulation of fast switching microwave rectifying circuit for ultra wideband patch antenna over a dual-frequency band (1.8 GHz for GSM and 2.4 GHz for ISM band). This band was chosen due to its high signal availability in the surrounding environment. New rectifying circuit topology with pair-matching trunks is designed using Advanced Design System (ADS) software. These trunks are interfaced with power divider to achieve good bandwidth, fast switching and high efficiency. The power divider acts as a good isolator between the trunks and its straightforward design structure makes it a good choice for a single feed UWB antenna. The simulated results demonstrate that the maximum output voltage is 2.13 V with an input power of -5 dBm. Moreover, the rectifier offers maximum efficiency of 86% for the input power of -5 dBm at given band, which could easily power up wireless sensor networks (WSN) and other small devices sufficiently.

Rectifying effect of heterojunctions between metals and doped conducting polymer nanostructure pellets

International Nuclear Information System (INIS)

Long Yunze; Yin Zhihua; Hui Wen; Chen Zhaojia; Wan Meixiang

2008-01-01

This paper reports that the Schottky junctions between low work function metals (e.g. Al and In) and doped semiconducting polymer pellets (e.g. polyaniline (PANI) microsphere pellet and polypyrrole (PPy) nanotube pellet) have been prepared and studied. Since Ag is a high work function metal which can make an ohmic contact with polymer, silver paste was used to fabricate the electrodes. The Al/PANI/Ag heterojunction shows an obvious rectifying effect as shown in I – V characteristic curves (rectifying ratio γ = 5 at ±6 V bias at room temperature). As compared to the Al/PANI/Ag, the heterojunction between In and PANI (In/PANI/Ag) exhibits a lower rectifying ratio γ = 1.6 at ±2 V bias at room temperature. In addition, rectifying effect was also observed in the heterojunctions Al/PPy/Ag (γ = 3.2 at ±1.6 V bias) and In/PPy/Ag (γ = 1.2 at ±3.0 V bias). The results were discussed in terms of thermoionic emission theory. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Characterization of poly-aniline/silicon heterojunction for gamma dosimetry

International Nuclear Information System (INIS)

Laranjeira, Jane M.G.; Khoury, Helen J.; Azevedo, Walter M.; Silva Junior, Eronides F. da; Vasconcelos, Elder A.

2000-01-01

In this work, we have developed and characterized poly-aniline/silicon heterojunction diodes for dosimetry applications. The poly-aniline thin film (thickness in order of microns) was deposited on n-type Si (1 Ωcm) by spin-coating technique from soluble poly-aniline. Al electrode was evaporated on the back side of Si wafer and a circular gold electrode with an area of 0,0036 cm 2 was evaporated on the poly-aniline film. The UV-visible and infrared characterization of the poly-aniline solution and the poly-aniline film has also been done. The heterojunction presents good rectifying behavior at room temperature and the rectification ratio were found to be 51664 ±1,0 V under ambient conditions. The saturation current densities are of the order of 1,4 μA/cm 2 at -1,0 V. The forward current correspond to the negative polarity on the aluminum electrode side and the ideality factor of diodes was approximately 2. The rectifying characteristics of diodes was changed after interaction with gamma radiation ( 60 Co) and the results shows that this devices has potential for applications in dosimetry for doses in range of 0 to 4000 Gy. (author)

A 50–60 GHz mm-wave rectifier with bulk voltage bias in 65-nm CMOS

NARCIS (Netherlands)

Gao, H.; Matters-Kammerer, M.; Harpe, P.; Baltus, P.

2016-01-01

This letter presents a 50∼60 GHz fully integrated 3-stage rectifier with bulk voltage bias for threshold voltage modulation in a 65-nm CMOS technology, which can be integrated in a mm-wave hybrid rectifier structure as the main rectifier. In this letter, the new technique of bulk voltage bias is

Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

International Nuclear Information System (INIS)

Zhao Peng; Zhang Ying; Wang Pei-Ji; Zhang Zhong; Liu De-Sheng

2011-01-01

Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C 60 nanotube caps. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

High Voltage GaN Schottky Rectifiers

Energy Technology Data Exchange (ETDEWEB)

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

A high-efficiency low-voltage CMOS rectifier for harvesting energy in implantable devices.

Science.gov (United States)

Hashemi, S Saeid; Sawan, Mohamad; Savaria, Yvon

2012-08-01

We present, in this paper, a new full-wave CMOS rectifier dedicated for wirelessly-powered low-voltage biomedical implants. It uses bootstrapped capacitors to reduce the effective threshold voltage of selected MOS switches. It achieves a significant increase in its overall power efficiency and low voltage-drop. Therefore, the rectifier is good for applications with low-voltage power supplies and large load current. The rectifier topology does not require complex circuit design. The highest voltages available in the circuit are used to drive the gates of selected transistors in order to reduce leakage current and to lower their channel on-resistance, while having high transconductance. The proposed rectifier was fabricated using the standard TSMC 0.18 μm CMOS process. When connected to a sinusoidal source of 3.3 V peak amplitude, it allows improving the overall power efficiency by 11% compared to the best recently published results given by a gate cross-coupled-based structure.

Design and test of a 2.25-MW transformer rectifier assembly

Science.gov (United States)

Cormier, R.; Daeges, J.

1989-01-01

A new 2.25-MW transformer rectifier assembly was fabricated for DSS-13 at Goldstone, California. The transformer rectifier will provide constant output power of 2.25 MW at any voltage from 31 kV to 125 kV. This will give a new capability of 1 MW of RF power at X-band, provided appropriate microwave tubes are in the power amplifier. A description of the design and test results is presented.

LHCb: The LHCb Silicon Tracker - Control system specific tools and challenges

CERN Multimedia

Saornil Gamarra, S

2013-01-01

The experiment control system of the LHCb experiment is continuously evolving and improving. The guidelines and structure initially defined are kept, and more common tools are made available to all sub-detectors. Although the main system control is mostly integrated and actions are executed in common for the whole LHCb experiment, there is some degree of freedom for each sub-system to implement the control system using these tools or by creating new ones. The implementation of the LHCb Silicon Tracker control system was extremely disorganized and with little documentation. This was due to either lack of time and manpower, and/or to limited experience and specifications. Despite this, the Silicon Tracker control system has behaved well during the first LHC run. It has continuously evolved since the start of operation and been adapted to the needs of operators with very different degrees of expertise. However, improvements and corrections have been made on a best effort basis due to time constraints placed by t...

Generic functional modelling of multi-pulse auto-transformer rectifier units for more-electric aircraft applications

Directory of Open Access Journals (Sweden)

Tao YANG

2018-05-01

Full Text Available The Auto-Transformer Rectifier Unit (ATRU is one preferred solution for high-power AC/DC power conversion in aircraft. This is mainly due to its simple structure, high reliability and reduced kVA ratings. Indeed, the ATRU has become a preferred AC/DC solution to supply power to the electric environment control system on-board future aircraft. In this paper, a general modelling method for ATRUs is introduced. The developed model is based on the fact that the DC voltage and current are strongly related to the voltage and current vectors at the AC terminals of ATRUs. In this paper, we carry on our research in modelling symmetric 18-pulse ATRUs and develop a generic modelling technique. The developed generic model can study not only symmetric but also asymmetric ATRUs. An 18-pulse asymmetric ATRU is used to demonstrate the accuracy and efficiency of the developed model by comparing with corresponding detailed switching SABER models provided by our industrial partner. The functional models also allow accelerated and accurate simulations and thus enable whole-scale more-electric aircraft electrical power system studies in the future. Keywords: Asymmetric transformer, Functional modelling, More-Electric Aircraft, Multi-pulse rectifier, Transformer rectifier unit

75 FR 24747 - SCI, LLC/Zener-Rectifier Operations Division A Wholly Owned Subsidiary of SCI, LLC/ON...

Science.gov (United States)

2010-05-05

... DEPARTMENT OF LABOR Employment and Training Administration [TA-W-70,235] SCI, LLC/Zener-Rectifier... Adjustment Assistance on October 19, 2009, applicable to workers of SCI LLC/Zener-Rectifier, Operations... Technical Resources were employed on-site at the Phoenix Arizona location of SCI LLC/Zener-Rectifier...

An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

Directory of Open Access Journals (Sweden)

Mohammad Reza Shokrani

2014-01-01

Full Text Available This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier’s output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

Flow restrictor silicon membrane microvalve actuated by optically controlled paraffin phase transition

International Nuclear Information System (INIS)

Kolari, K; Havia, T; Stuns, I; Hjort, K

2014-01-01

Restrictor valves allow proportional control of fluid flow but are rarely integrated in microfluidic systems. In this study, an optically actuated silicon membrane restrictor microvalve is demonstrated. Its actuation is based on the phase transition of paraffin, using a paraffin wax mixed with a suitable concentration of optically absorbing nanographite particles. Backing up the membrane with oil (the melted paraffin) allows for a compliant yet strong contact to the valve seat, which enables handling of high pressures. At flow rates up to 30 µL min −1 and at a pressure of 2 bars, the valve can successfully be closed and control the flow level by restriction. The use of this paraffin composite as an adhesive layer sandwiched between the silicon valve and glass eases fabrication. This type of restrictor valve is best suited for high pressure, low volume flow silicon-based nanofluidic systems. (paper)

Graphene as transparent and current spreading electrode in silicon solar cell

Energy Technology Data Exchange (ETDEWEB)

Behura, Sanjay K., E-mail: sanjaybehura@gmail.com; Nayak, Sasmita; Jani, Omkar [Solar Energy Research Wing, Gujarat Energy Research and Management Institute - Research, Innovation and Incubation Centre, Gandhinagar 382007, Gujarat (India); Mahala, Pramila [School of Solar Energy, Pandit Deendayal Petroleum University, Gandhinagar 382007, Gujarat (India)

2014-11-15

Fabricated bi-layer graphene (BLG) has been studied as transparent and current spreading electrode (TCSE) for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE) and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%), in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

2011 NOAA Ortho-rectified Mosaic of Galveston, Texas

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

Front buried metallic contacts and thin porous silicon combination for efficient polycrystalline silicon solar cells

International Nuclear Information System (INIS)

Ben Rabha, M.; Boujmil, M.F.; Meddeb, N.; Saadoun, M.; Bessais, B.

2006-01-01

We investigate the impacts of achieving buried grid metallic contacts (BGMC), with and without application of a front porous silicon (PS) layer, on the photovoltaic properties of polycrystalline silicon (pc-Si) solar cells. A grooving method based on Chemical Vapor Etching (CVE) was used to perform buried grid contacts on the emitter of pc-Si solar cells. After realizing the n + /p junction using a phosphorus diffusion source, BGMCs were realized using the screen printing technique. We found that the buried metallic contacts improve the short circuit current from 16 mA/cm 2 (for reference cell without buried contacts) to about 19 mA/cm 2 . After application of a front PS layer on the n + emitter, we observe an enhancement of the short circuit current from 19 to 24 mA/cm 2 with a decrease of the reflectivity by about 40% of its initial value. The dark I-V characteristics of the pc-Si cells with PS-based emitter show an important reduction of the reverse current together with an improvement of the rectifying behaviour. Spectral response measurements performed at a wavelength range of 400-1100 nm showed a significant increase in the quantum efficiency, particularly at shorter wavelength (400-650 nm). These results indicate that the BGMCs improve the carrier collection and that the PS layer acts as an antireflective coating that reduces reflection losses and passivates the front surface. This low cost and simple technology based on the CVE technique could enable preparing efficient polycrystalline silicon solar cells

Competitive inhibition can linearize dose-response and generate a linear rectifier.

Science.gov (United States)

Savir, Yonatan; Tu, Benjamin P; Springer, Michael

2015-09-23

Many biological responses require a dynamic range that is larger than standard bi-molecular interactions allow, yet the also ability to remain off at low input. Here we mathematically show that an enzyme reaction system involving a combination of competitive inhibition, conservation of the total level of substrate and inhibitor, and positive feedback can behave like a linear rectifier-that is, a network motif with an input-output relationship that is linearly sensitive to substrate above a threshold but unresponsive below the threshold. We propose that the evolutionarily conserved yeast SAGA histone acetylation complex may possess the proper physiological response characteristics and molecular interactions needed to perform as a linear rectifier, and we suggest potential experiments to test this hypothesis. One implication of this work is that linear responses and linear rectifiers might be easier to evolve or synthetically construct than is currently appreciated.

Multivariate data analysis of process control data from neutron transmutation doping of silicon

DEFF Research Database (Denmark)

Heydorn, K.; Hegaard, N.

1994-01-01

Final resistivities obtained by neutron transmutation doping (NTD) of silicon can be measured only after an annealing process has been carried out at the manufacturer's plant. The reactor centre carrying out the neutron doping process by irradiation under selected conditions must control the proc......Final resistivities obtained by neutron transmutation doping (NTD) of silicon can be measured only after an annealing process has been carried out at the manufacturer's plant. The reactor centre carrying out the neutron doping process by irradiation under selected conditions must control...

Polarization Control for Silicon Photonic Circuits

Science.gov (United States)

Caspers, Jan Niklas

In recent years, the field of silicon photonics has received much interest from researchers and companies across the world. The idea is to use photons to transmit information on a computer chip in order to increase computational speed while decreasing the power required for computation. To allow for communication between the chip and other components, such as the computer memory, these silicon photonics circuits need to be interfaced with optical fiber. Unfortunately, in order to interface an optical fiber with an integrated photonics circuit two major challenges need to be overcome: a mode-size mismatch as well as a polarization mismatch. While the problem of mode-size has been well investigated, the polarization mismatch has yet to be addressed. In order to solve the polarization mismatch one needs to gain control over the polarization of the light in a waveguide. In this thesis, I will present the components required to solve the polarization mismatch. Using a novel wave guiding structure, the hybrid plasmonic waveguide, an ultra-compact polarization rotator is designed, fabricated, and tested. The hybrid plasmonic rotator has a performance similar to purely dielectric rotators while being more than an order of magnitude smaller. Additionally, a broadband hybrid plasmonic coupler is designed and measured. This coupler has a performance similar to dielectric couplers while having a footprint an order of magnitude smaller. Finally, a system solution to the polarization mismatch is provided. The system, a polarization adapter, matches the incoming changing polarization from the fiber actively to the correct one of the silicon photonics circuit. The polarization adapter is demonstrated experimentally to prove its operation. This proof is based on dielectric components, but the aforementioned hybrid plasmonic waveguide components would make the system more compact.

Wideband Small-Signal Input dq Admittance Modeling of Six-Pulse Diode Rectifiers

DEFF Research Database (Denmark)

Yue, Xiaolong; Wang, Xiongfei; Blaabjerg, Frede

2018-01-01

This paper studies the wideband small-signal input dq admittance of six-pulse diode rectifiers. Considering the frequency coupling introduced by ripple frequency harmonics of d-and q-channel switching function, the proposed model successfully predicts the small-signal input dq admittance of six......-pulse diode rectifiers in high frequency regions that existing models fail to explain. Simulation and experimental results verify the accuracy of the proposed model....

Understanding and controlling the step bunching instability in aqueous silicon etching

Science.gov (United States)

Bao, Hailing

Chemical etching of silicon has been widely used for more than half a century in the semiconductor industry. It not only forms the basis for current wafer cleaning processes, it also serves as a powerful tool to create a variety of surface morphologies for different applications. Its potential for controlling surface morphology at the atomic scale over micron-size regions is especially appealing. In spite of its wide usage, the chemistry of silicon etching is poorly understood. Many seemingly simple but fundamental questions have not been answered. As a result, the development of new etchants and new etching protocols are based on expensive and tedious trial-and-error experiments. A better understanding of the etching mechanism would direct the rational formulation of new etchants that produce controlled etch morphologies. Particularly, micron-scale step bunches spontaneously develop on the vicinal Si(111) surface etched in KOH or other anisotropic aqueous etchants. The ability to control the size, orientation, density and regularity of these surface features would greatly improve the performance of microelectromechanical devices. This study is directed towards understanding the chemistry and step bunching instability in aqueous anisotropic etching of silicon through a combination of experimental techniques and theoretical simulations. To reveal the cause of step-bunching instability, kinetic Monte Carlo simulations were constructed based on an atomistic model of the silicon lattice and a modified kinematic wave theory. The simulations showed that inhomogeneity was the origin of step-bunching, which was confirmed through STM studies of etch morphologies created under controlled flow conditions. To quantify the size of the inhomogeneities in different etchants and to clarify their effects, a five-parallel-trench pattern was fabricated. This pattern used a nitride mask to protect most regions of the wafer; five evenly spaced etch windows were opened to the Si(110

SiC MOSFET Based Single Phase Active Boost Rectifier with Power Factor Correction for Wireless Power Transfer Applications

Energy Technology Data Exchange (ETDEWEB)

Onar, Omer C [ORNL; Tang, Lixin [ORNL; Chinthavali, Madhu Sudhan [ORNL; Campbell, Steven L [ORNL; Miller (JNJ), John M. [JNJ-Miller PLC

2014-01-01

Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges the utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized to compensate for the change in the impedance due to variable parameters such as battery state-of-charge, coupling factor, and coil misalignment. This paper presents the implementation of an active front-end rectifier on the grid side for power factor control and voltage boost capability for load power regulation. The proposed SiC MOSFET based single phase active front end rectifier with PFC resulted in >97% efficiency at 137mm air-gap and >95% efficiency at 160mm air-gap.

Delayed rectifier potassium channels are involved in SO2 derivative-induced hippocampal neuronal injury.

Science.gov (United States)

Li, Guangke; Sang, Nan

2009-01-01

Recent studies implicate the possible neurotoxicity of SO(2), however, its mechanisms remain unclear. In the present study, we investigated SO(2) derivative-induced effect on delayed rectifier potassium channels (I(K)) and cellular death/apoptosis in primary cultured hippocampal neurons. The results demonstrate that SO(2) derivatives (NaHSO(3) and Na(2)SO(3), 3:1M/M) effectively augmented I(K) and promoted the activation of delayed rectifier potassium channels. Also, SO(2) derivatives increased neuronal death percentage and contributed to the formation of DNA ladder in concentration-dependent manners. Interestingly, the neuronal death and DNA ladder formation, caused by SO(2) derivatives, could be attenuated by the delayed rectifier potassium channel blocker (tetraethylammonium, TEA), but not by the transient outward potassium channel blocker (4-aminopyridine, 4-AP). It implies that stimulating delayed rectifier potassium channels were involved in SO(2) derivative-caused hippocampal neuronal insults, and blocking these channels might be one of the possibly clinical treatment for SO(2)-caused neuronal dysfunction.

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

Energy-harvesting shock absorber with a mechanical motion rectifier

Science.gov (United States)

Li, Zhongjie; Zuo, Lei; Kuang, Jian; Luhrs, George

2013-02-01

Energy-harvesting shock absorbers are able to recover the energy otherwise dissipated in the suspension vibration while simultaneously suppressing the vibration induced by road roughness. They can work as a controllable damper as well as an energy generator. An innovative design of regenerative shock absorbers is proposed in this paper, with the advantage of significantly improving the energy harvesting efficiency and reducing the impact forces caused by oscillation. The key component is a unique motion mechanism, which we called ‘mechanical motion rectifier (MMR)’, to convert the oscillatory vibration into unidirectional rotation of the generator. An implementation of a MMR-based harvester with high compactness is introduced and prototyped. A dynamic model is created to analyze the general properties of the motion rectifier by making an analogy between mechanical systems and electrical circuits. The model is capable of analyzing electrical and mechanical components at the same time. Both simulation and experiments are carried out to verify the modeling and the advantages. The prototype achieved over 60% efficiency at high frequency, much better than conventional regenerative shock absorbers in oscillatory motion. Furthermore, road tests are done to demonstrate the feasibility of the MMR shock absorber, in which more than 15 Watts of electricity is harvested while driving at 15 mph on a smooth paved road. The MMR-based design can also be used for other applications of vibration energy harvesting, such as from tall buildings or long bridges.

Energy-harvesting shock absorber with a mechanical motion rectifier

International Nuclear Information System (INIS)

Li, Zhongjie; Zuo, Lei; Kuang, Jian; Luhrs, George

2013-01-01

Energy-harvesting shock absorbers are able to recover the energy otherwise dissipated in the suspension vibration while simultaneously suppressing the vibration induced by road roughness. They can work as a controllable damper as well as an energy generator. An innovative design of regenerative shock absorbers is proposed in this paper, with the advantage of significantly improving the energy harvesting efficiency and reducing the impact forces caused by oscillation. The key component is a unique motion mechanism, which we called ‘mechanical motion rectifier (MMR)’, to convert the oscillatory vibration into unidirectional rotation of the generator. An implementation of a MMR-based harvester with high compactness is introduced and prototyped. A dynamic model is created to analyze the general properties of the motion rectifier by making an analogy between mechanical systems and electrical circuits. The model is capable of analyzing electrical and mechanical components at the same time. Both simulation and experiments are carried out to verify the modeling and the advantages. The prototype achieved over 60% efficiency at high frequency, much better than conventional regenerative shock absorbers in oscillatory motion. Furthermore, road tests are done to demonstrate the feasibility of the MMR shock absorber, in which more than 15 Watts of electricity is harvested while driving at 15 mph on a smooth paved road. The MMR-based design can also be used for other applications of vibration energy harvesting, such as from tall buildings or long bridges. (paper)

A self-powered piezoelectric energy harvesting interface circuit with efficiency-enhanced P-SSHI rectifier

Science.gov (United States)

Liu, Lianxi; Pang, Yanbo; Yuan, Wenzhi; Zhu, Zhangming; Yang, Yintang

2018-04-01

The key to self-powered technique is initiative to harvest energy from the surrounding environment. Harvesting energy from an ambient vibration source utilizing piezoelectrics emerged as a popular method. Efficient interface circuits become the main limitations of existing energy harvesting techniques. In this paper, an interface circuit for piezoelectric energy harvesting is presented. An active full bridge rectifier is adopted to improve the power efficiency by reducing the conduction loss on the rectifying path. A parallel synchronized switch harvesting on inductor (P-SSHI) technique is used to improve the power extraction capability from piezoelectric harvester, thereby trying to reach the theoretical maximum output power. An intermittent power management unit (IPMU) and an output capacitor-less low drop regulator (LDO) are also introduced. Active diodes (AD) instead of traditional passive ones are used to reduce the voltage loss over the rectifier, which results in a good power efficiency. The IPMU with hysteresis comparator ensures the interface circuit has a large transient output power by limiting the output voltage ranges from 2.2 to 2 V. The design is fabricated in a SMIC 0.18 μm CMOS technology. Simulation results show that the flipping efficiency of the P-SSHI circuit is over 80% with an off-chip inductor value of 820 μH. The output power the proposed rectifier can obtain is 44.4 μW, which is 6.7× improvement compared to the maximum output power of a traditional rectifier. Both the active diodes and the P-SSHI help to improve the output power of the proposed rectifier. LDO outputs a voltage of 1.8 V with the maximum 90% power efficiency. The proposed P-SSHI rectifier interface circuit can be self-powered without the need for additional power supply. Project supported by the National Natural Science Foundation of China (Nos. 61574103, U1709218) and the Key Research and Development Program of Shaanxi Province (No. 2017ZDXM-GY-006).

Control of back surface reflectance from aluminum alloyed contacts on silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Cudzinovic, M.; Sopori, B. [National Renewable Energy Lab., Golden, CO (United States)

1996-05-01

A process for forming highly reflective aluminum back contacts with low contact resistance to silicon solar cells is described. By controlling the process conditions, it is possible to vary the silicon/aluminum interface from a specular to a diffuse reflector while maintaining a high interface reflectance. The specular interface is found to be a uniform silicon/aluminum alloy layer a few angstroms thick that has epitaxially regrown on the silicon. The diffuse interface consists of randomly distributed (111) pyramids produced by crystallographic out-diffusion of the bulk silicon. The light trapping ability of the diffuse contact is found to be close to the theoretical limit. Both types of contacts are found to have specific contact resistivities of 10{sup {minus}5} {Omega}-cm{sup 2}. The process for forming the contacts involves illuminating the devices with tungsten halogen lamps. The process is rapid (under 100 s) and low temperature (peak temperature < 580{degrees}C), making it favorable for commercial solar cell fabrication.

Load-Independent Harmonic Mitigation in SCR-Fed Three-Phase Multiple Adjustable Speed Drive Systems with Deliberately Dispatched Firing Angles

DEFF Research Database (Denmark)

Yang, Yongheng; Davari, Pooya; Blaabjerg, Frede

2018-01-01

Adjustable speed drives (ASD) are widely used in industry for energy savings, where low-cost diode rectifiers are still employed as the front-ends, also for simplicity in control and reliability in operation. However, significant harmonics appear at the grid, which should be tackled according...... a harmonic mitigation strategy for multiple ASD systems, where silicon-controlled rectifiers (SCR) with boost converters in the dc-link have been adopted to increase the harmonic-current controllability. More specific, the SCR firing angles are deliberately dispatched among the drive units, which results...

Special power supply and control system for the gas-cooled fast reactor-core flow test loop

International Nuclear Information System (INIS)

Hudson, T.L.

1981-09-01

The test bundle in the Gas-Cooled Fast Reactor-Core Flow Test Loop (GCFR-CFTL) requires a source of electrical power that can be controlled accurately and reliably over a wide range of steady-state and transient power levels and skewed power distributions to simulate GCFR operating conditions. Both ac and dc power systems were studied, and only those employing silicon-controlled rectifiers (SCRs) could meet the requirements. This report summarizes the studies, tests, evaluations, and development work leading to the selection. it also presents the design, procurement, testing, and evaluation of the first 500-kVa LMPL supply. The results show that the LMPL can control 60-Hz sine wave power from 200 W to 500 kVA

Protocol converter for serial communication between digital rectifier controllers and a power plant SCADA system

Directory of Open Access Journals (Sweden)

Vukić Vladimir Đ.

2016-01-01

Full Text Available The paper describes the protocol converter INT-485-MBRTU, developed for serial communication between the thyristor rectifier (based on the proprietary protocol "INT-CPD-05", according to standard RS-485 and the SCADA system (based on protocol "Modbus RTU", of the same standard in the thermal power plant "Nikola Tesla B1". Elementary data on industrial communication protocols and communication gateways were provided. The basic technical characteristics of the "Omron" programmable logic controller CJ series were described, as well as the developed device INT-485-MBRTU. Protocol converters with two versions of communication software were tested, differing only in one control word, intended for a forced successive change of communication sequences, in opposite to automatic sequence relieve. The device iNT-485-MBRTU, with the program for forced successive change of communication sequences, demonstrated the reliability of data transfer of 100 %, in a sample of approximately 480 messages. For nearly the same sample, the same protocol converter, with a version of the program without any type of message identifiers, transferred less than 60 % of the foreseen data. During multiple sixty-hour tests, the reliability of data transfer of at least 99.9979% was recorded, in 100% of the analysed cases, and for a sample of nearly 96,000 pairs of the send and receive messages. We analysed the results and estimated the additional possibilities for application of the INT-485-MBRTU protocol converter.

Reconfigurable Resonant Regulating Rectifier With Primary Equalization for Extended Coupling- and Loading-Range in Bio-Implant Wireless Power Transfer.

Science.gov (United States)

Li, Xing; Meng, Xiaodong; Tsui, Chi-Ying; Ki, Wing-Hung

2015-12-01

Wireless power transfer using reconfigurable resonant regulating (R(3)) rectification suffers from limited range in accommodating varying coupling and loading conditions. A primary-assisted regulation principle is proposed to mitigate these limitations, of which the amplitude of the rectifier input voltage on the secondary side is regulated by accordingly adjusting the voltage amplitude Veq on the primary side. A novel current-sensing method and calibration scheme track Veq on the primary side. A ramp generator simultaneously provides three clock signals for different modules. Both the primary equalizer and the R(3) rectifier are implemented as custom integrated circuits fabricated in a 0.35 μm CMOS process, with the global control implemented in FPGA. Measurements show that with the primary equalizer, the workable coupling and loading ranges are extended by 250% at 120 mW load and 300% at 1.2 cm coil distance compared to the same system without the primary equalizer. A maximum rectifier efficiency of 92.5% and a total system efficiency of 62.4% are demonstrated.

Graphene as transparent and current spreading electrode in silicon solar cell

Directory of Open Access Journals (Sweden)

Sanjay K. Behura

2014-11-01

Full Text Available Fabricated bi-layer graphene (BLG has been studied as transparent and current spreading electrode (TCSE for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%, in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

Site-controlled fabrication of silicon nanotips by indentation-induced selective etching

Science.gov (United States)

Jin, Chenning; Yu, Bingjun; Liu, Xiaoxiao; Xiao, Chen; Wang, Hongbo; Jiang, Shulan; Wu, Jiang; Liu, Huiyun; Qian, Linmao

2017-12-01

In the present study, the indentation-induced selective etching approach is proposed to fabricate site-controlled pyramidal nanotips on Si(100) surface. Without any masks, the site-controlled nanofabrication can be realized by nanoindentation and post etching in potassium hydroxide (KOH) solution. The effect of indentation force and etching time on the formation of pyramidal nanotips was investigated. It is found that the height and radius of the pyramidal nanotips increase with the indentation force or etching time, while long-time etching can lead to the collapse of the tips. The formation of pyramidal tips is ascribed to the anisotropic etching of silicon and etching stop of (111) crystal planes in KOH aqueous solution. The capability of this fabrication method was further demonstrated by producing various tip arrays on silicon surface by selective etching of the site-controlled indent patterns, and the maximum height difference of these tips is less than 10 nm. The indentation-induced selective etching provides a new strategy to fabricate well site-controlled tip arrays for multi-probe SPM system, Si nanostructure-based sensors and high-quality information storage.

Inward rectifier potassium channels in the HL-1 cardiomyocyte-derived cell line.

Science.gov (United States)

Goldoni, Dana; Zhao, YouYou; Green, Brian D; McDermott, Barbara J; Collins, Anthony

2010-11-01

HL-1 is a line of immortalized cells of cardiomyocyte origin that are a useful complement to native cardiomyocytes in studies of cardiac gene regulation. Several types of ion channel have been identified in these cells, but not the physiologically important inward rectifier K(+) channels. Our aim was to identify and characterize inward rectifier K(+) channels in HL-1 cells. External Ba(2+) (100 µM) inhibited 44 ± 0.05% (mean ± s.e.m., n = 11) of inward current in whole-cell patch-clamp recordings. The reversal potential of the Ba(2+)-sensitive current shifted with external [K(+)] as expected for K(+)-selective channels. The slope conductance of the inward Ba(2+)-sensitive current increased with external [K(+)]. The apparent Kd for Ba(2+) was voltage dependent, ranging from 15 µM at -150  mV to 148 µM at -75  mV in 120  mM external K(+). This current was insensitive to 10 µM glybenclamide. A component of whole-cell current was sensitive to 150 µM 4,4'-diisothiocyanatostilbene-2,2'-disulfonic acid (DIDS), although it did not correspond to the Ba(2+)-sensitive component. The effect of external 1 mM Cs(+) was similar to that of Ba(2+). Polymerase chain reaction using HL-1 cDNA as template and primers specific for the cardiac inward rectifier K(ir)2.1 produced a fragment of the expected size that was confirmed to be K(ir)2.1 by DNA sequencing. In conclusion, HL-1 cells express a current that is characteristic of cardiac inward rectifier K(+) channels, and express K(ir)2.1 mRNA. This cell line may have use as a system for studying inward rectifier gene regulation in a cardiomyocyte phenotype. © 2010 Wiley-Liss, Inc.

Controlling the flow of light with silicon nanostructures

International Nuclear Information System (INIS)

Park, W

2010-01-01

Silicon is an important material for integrated photonics applications. High refractive index and transparency in the infrared region makes it an ideal platform to implement nanostructures for novel optical devices. We fabricated silicon photonic crystals and experimentally demonstrated negative refraction and self-collimation. We also used heterodyne near-field scanning optical microscope to directly visualize the anomalous wavefronts. When the periodicity is much smaller than wavelength, silicon photonic crystal can be described by the effective medium theory. By engineering effective refractive index with silicon nanorod size, we demonstrated an all-dielectric cloak structure which can hide objects in front of a highly reflecting plane. The work discussed in this review shows the powerful design flexibility and versatility of silicon nanostructures

Biradical and triradical organic magnetic molecules as spin filters and rectifiers

International Nuclear Information System (INIS)

Zhu, L.; Yao, K.L.; Liu, Z.L.

2012-01-01

Graphical abstract: (a) Negative differential resistance (NDR) characteristic and antiparallel spin-current (ASC) rectification; (b) spin-current (SC) rectification and charge-current (CC) rectification properties Display Omitted Highlights: ► Organic magnetic molecules at gold electrodes as spin/charge rectifier. ► Spin diode/rectification stems from length and asymmetry of molecular framework. ► Negative differential resistance, spin-filtering and switching evidenced. - Abstract: We have theoretically investigated the spin-polarized transport properties of molecular junctions consisting of biradical and triradical organic magnetic molecules sandwiched between two symmetric gold electrodes, respectively. It shows that these junctions function as a spin rectifier or a combination of spin and charge rectifiers with high spin rectification ratios exceeding 100, wherein the spin diode/rectification effect stems from the conjugated length and asymmetry of the molecular framework, which is the pre-requisite for electronic asymmetry of the adsorbed species. The negative differential resistance, spin-filtering and switching properties are also unveiled. In particular, it is revealed that the strong couplings between the electrodes and molecules are responsible for the negative differential resistance.

2012 NOAA Ortho-rectified Color Mosaic of Astoria, Oregon

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2011 NOAA Ortho-rectified Mosaic of Intracoastal Waterway, Texas

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2010 NOAA Ortho-rectified Mosaic of Lake Champlain, Vermont

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

Possibility designing half-wave and full-wave molecular rectifiers by using single benzene molecule

Science.gov (United States)

Abbas, Mohammed A.; Hanoon, Falah H.; Al-Badry, Lafy F.

2018-02-01

This work focused on possibility designing half-wave and full-wave molecular rectifiers by using single and two benzene rings, respectively. The benzene rings were threaded by a magnetic flux that changes over time. The quantum interference effect was considered as the basic idea in the rectification action, the para and meta configurations were investigated. All the calculations are performed by using steady-state theoretical model, which is based on the time-dependent Hamiltonian model. The electrical conductance and the electric current are considered as DC output signals of half-wave and full-wave molecular rectifiers. The finding in this work opens up the exciting potential to use these molecular rectifiers in molecular electronics.

Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

Science.gov (United States)

Wang, Chenlei

The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to

Site-Controlled Growth of Monolithic InGaAs/InP Quantum Well Nanopillar Lasers on Silicon.

Science.gov (United States)

Schuster, Fabian; Kapraun, Jonas; Malheiros-Silveira, Gilliard N; Deshpande, Saniya; Chang-Hasnain, Connie J

2017-04-12

In this Letter, we report the site-controlled growth of InP nanolasers on a silicon substrate with patterned SiO 2 nanomasks by low-temperature metal-organic chemical vapor deposition, compatible with silicon complementary metal-oxide-semiconductor (CMOS) post-processing. A two-step growth procedure is presented to achieve smooth wurtzite faceting of vertical nanopillars. By incorporating InGaAs multiquantum wells, the nanopillar emission can be tuned over a wide spectral range. Enhanced quality factors of the intrinsic InP nanopillar cavities promote lasing at 0.87 and 1.21 μm, located within two important optical telecommunication bands. This is the first demonstration of a site-controlled III-V nanolaser monolithically integrated on silicon with a silicon-transparent emission wavelength, paving the way for energy-efficient on-chip optical links at typical telecommunication wavelengths.

A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

Science.gov (United States)

Jin, Jidong; Zhang, Jiawei; Shaw, Andrew; Kudina, Valeriya N.; Mitrovic, Ivona Z.; Wrench, Jacqueline S.; Chalker, Paul R.; Balocco, Claudio; Song, Aimin; Hall, Steve

2018-02-01

Zinc oxide (ZnO) has recently attracted attention for its potential application to high speed electronics. In this work, a high speed Schottky diode rectifier was fabricated based on a ZnO thin film deposited by plasma-enhanced atomic layer deposition and a PtOx Schottky contact deposited by reactive radio-frequency sputtering. The rectifier shows an ideality factor of 1.31, an effective barrier height of 0.79 eV, a rectification ratio of 1.17  ×  107, and cut-off frequency as high as 550 MHz. Low frequency noise measurements reveal that the rectifier has a low interface-state density of 5.13  ×  1012 cm-2 eV-1, and the noise is dominated by the mechanism of a random walk of electrons at the PtO x /ZnO interface. The work shows that the rectifier can be used for both noise sensitive and high frequency electronics applications.

Comparative Evaluation of Three-Phase Isolated Matrix-Type PFC Rectifier Concepts for High Efficiency 380VDC Supplies of Future Telco and Data Centers

DEFF Research Database (Denmark)

Cortes, Patricio; Bortis, Dominik; Pittini, Riccardo

2014-01-01

rectifier and in many cases a mains transformer is used to provide galvanic isolation. In order to achieve a high efficiency in the DC voltage generation and to implement the required isolation, a single-stage concept, such as a matrix-type rectifier that enables PFC functionality and galvanic isolation...... in a single conversion, can be beneficial. In addition, due to the fact that with the matrix-type rectifier the galvanic isolation is performed with a high-frequency transformer, this results in a more compact rectifier system compared to conventional systems where the mains-frequency isolation transformer...... is located at the input of the PFC rectifier. In this paper, an overview of isolated matrix-type PFC rectifier topologies is given and a new converter circuit is proposed, analyzed and comparatively evaluated against another promising PFC rectifier concept, the phase-modular IMY-rectifier....

Enhancement of delayed-rectifier potassium conductance by low concentrations of local anaesthetics in spinal sensory neurones

Science.gov (United States)

Olschewski, Andrea; Wolff, Matthias; Bräu, Michael E; Hempelmann, Gunter; Vogel, Werner; Safronov, Boris V

2002-01-01

Combining the patch-clamp recordings in slice preparation with the ‘entire soma isolation' method we studied action of several local anaesthetics on delayed-rectifier K+ currents in spinal dorsal horn neurones.Bupivacaine, lidocaine and mepivacaine at low concentrations (1–100 μM) enhanced delayed-rectifier K+ current in intact neurones within the spinal cord slice, while exhibiting a partial blocking effect at higher concentrations (>100 μM). In isolated somata 0.1–10 μM bupivacaine enhanced delayed-rectifier K+ current by shifting its steady-state activation characteristic and the voltage-dependence of the activation time constant to more negative potentials by 10–20 mV.Detailed analysis has revealed that bupivacaine also increased the maximum delayed-rectifier K+ conductance by changing the open probability, rather than the unitary conductance, of the channel.It is concluded that local anaesthetics show a dual effect on delayed-rectifier K+ currents by potentiating them at low concentrations and partially suppressing at high concentrations. The phenomenon observed demonstrated the complex action of local anaesthetics during spinal and epidural anaesthesia, which is not restricted to a suppression of Na+ conductance only. PMID:12055132

Multi-service highly sensitive rectifier for enhanced RF energy scavenging.

Science.gov (United States)

Shariati, Negin; Rowe, Wayne S T; Scott, James R; Ghorbani, Kamran

2015-05-07

Due to the growing implications of energy costs and carbon footprints, the need to adopt inexpensive, green energy harvesting strategies are of paramount importance for the long-term conservation of the environment and the global economy. To address this, the feasibility of harvesting low power density ambient RF energy simultaneously from multiple sources is examined. A high efficiency multi-resonant rectifier is proposed, which operates at two frequency bands (478-496 and 852-869 MHz) and exhibits favorable impedance matching over a broad input power range (-40 to -10 dBm). Simulation and experimental results of input reflection coefficient and rectified output power are in excellent agreement, demonstrating the usefulness of this innovative low-power rectification technique. Measurement results indicate an effective efficiency of 54.3%, and an output DC voltage of 772.8 mV is achieved for a multi-tone input power of -10 dBm. Furthermore, the measured output DC power from harvesting RF energy from multiple services concurrently exhibits a 3.14 and 7.24 fold increase over single frequency rectification at 490 and 860 MHz respectively. Therefore, the proposed multi-service highly sensitive rectifier is a promising technique for providing a sustainable energy source for low power applications in urban environments.

Engineered Asymmetric Composite Membranes with Rectifying Properties.

Science.gov (United States)

Wen, Liping; Xiao, Kai; Sainath, Annadanam V Sesha; Komura, Motonori; Kong, Xiang-Yu; Xie, Ganhua; Zhang, Zhen; Tian, Ye; Iyoda, Tomokazu; Jiang, Lei

2016-01-27

Asymmetric composite membranes with rectifying properties are developed by grafting pH-stimulus-responsive materials onto the top layer of the composite structure, which is prepared by two novel block copolymers using a phase-separation technique. This engineered asymmetric composite membrane shows potential applications in sensors, filtration, and nanofluidic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Rectifier Design Challenges for RF Wireless Power Transfer and Energy Harvesting Systems

Directory of Open Access Journals (Sweden)

A. Collado

2017-06-01

Full Text Available The design of wireless power transfer (WPT and energy harvesting (EH solutions poses different challenges towards achieving maximum RF-DC conversion efficiency in these systems. This paper covers several selected challenges when developing WPT and electromagnetic EH solutions, such as the design of multiband and broadband rectifiers, the minimization of the effect that load and input power variations may have on the system performance and finally the most optimum power combining mechanisms that can be used when dealing with multi-element rectifiers.

A Novel Current-Mode Full-Wave Rectifier Based on One CDTA and Two Diodes

Directory of Open Access Journals (Sweden)

F. Khateb

2010-09-01

Full Text Available Precision rectifiers are important building blocks for analog signal processing. The traditional approach based on diodes and operational amplifiers (OpAmps exhibits undesirable effects caused by limited OpAmp slew rate and diode commutations. In the paper, a full-wave rectifier based on one CDTA and two Schottky diodes is presented. The PSpice simulation results are included.

Energy-Saving Inverter

Science.gov (United States)

Rippel, W. E.; Edwards, D. B.

1984-01-01

Commutation by field-effect transistor allows more efficient operation. High voltage field-effect transistor (FET) controls silicon controlled rectifiers (SCR's). Circuit requires only one capacitor and one inductor in commutation circuit: simpler, more efficient, and more economical than conventional inverters. Adaptable to dc-to-dc converters.

Biradical and triradical organic magnetic molecules as spin filters and rectifiers

Energy Technology Data Exchange (ETDEWEB)

Zhu, L. [School of Physics, School of Optoelectronics Science and Engineering, Wuhan Pulsed Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Yao, K.L., E-mail: klyao@hust.edu.cn [School of Physics, School of Optoelectronics Science and Engineering, Wuhan Pulsed Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); International Center of Materials Physics, Chinese Academy of Science, Shengyang 110015 (China); Liu, Z.L. [School of Physics, School of Optoelectronics Science and Engineering, Wuhan Pulsed Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)

2012-03-13

Graphical abstract: (a) Negative differential resistance (NDR) characteristic and antiparallel spin-current (ASC) rectification; (b) spin-current (SC) rectification and charge-current (CC) rectification properties Display Omitted Highlights: Black-Right-Pointing-Pointer Organic magnetic molecules at gold electrodes as spin/charge rectifier. Black-Right-Pointing-Pointer Spin diode/rectification stems from length and asymmetry of molecular framework. Black-Right-Pointing-Pointer Negative differential resistance, spin-filtering and switching evidenced. - Abstract: We have theoretically investigated the spin-polarized transport properties of molecular junctions consisting of biradical and triradical organic magnetic molecules sandwiched between two symmetric gold electrodes, respectively. It shows that these junctions function as a spin rectifier or a combination of spin and charge rectifiers with high spin rectification ratios exceeding 100, wherein the spin diode/rectification effect stems from the conjugated length and asymmetry of the molecular framework, which is the pre-requisite for electronic asymmetry of the adsorbed species. The negative differential resistance, spin-filtering and switching properties are also unveiled. In particular, it is revealed that the strong couplings between the electrodes and molecules are responsible for the negative differential resistance.

Multi-Service Highly Sensitive Rectifier for Enhanced RF Energy Scavenging

Science.gov (United States)

Shariati, Negin; Rowe, Wayne S. T.; Scott, James R.; Ghorbani, Kamran

2015-01-01

Due to the growing implications of energy costs and carbon footprints, the need to adopt inexpensive, green energy harvesting strategies are of paramount importance for the long-term conservation of the environment and the global economy. To address this, the feasibility of harvesting low power density ambient RF energy simultaneously from multiple sources is examined. A high efficiency multi-resonant rectifier is proposed, which operates at two frequency bands (478–496 and 852–869 MHz) and exhibits favorable impedance matching over a broad input power range (−40 to −10 dBm). Simulation and experimental results of input reflection coefficient and rectified output power are in excellent agreement, demonstrating the usefulness of this innovative low-power rectification technique. Measurement results indicate an effective efficiency of 54.3%, and an output DC voltage of 772.8 mV is achieved for a multi-tone input power of −10 dBm. Furthermore, the measured output DC power from harvesting RF energy from multiple services concurrently exhibits a 3.14 and 7.24 fold increase over single frequency rectification at 490 and 860 MHz respectively. Therefore, the proposed multi-service highly sensitive rectifier is a promising technique for providing a sustainable energy source for low power applications in urban environments. PMID:25951137

Direct Driven Permanent Magnet Synchronous Generators with Diode Rectifiers for Use in Offshore Wind Turbines

OpenAIRE

Reigstad, Tor Inge

2007-01-01

This work is focused on direct-driven permanent magnets synchronous generators (PMSG) with diode rectifiers for use in offshore wind turbines. Reactive compensation of the generator, power losses and control of the generator are studied. Configurations for power transmission to onshore point of common connection are also considered. Costs, power losses, reliability and interface with the PMSG are discussed. The purpose of the laboratory tests and simulations are to learn how a PMSG with dio...

Inhibition of the cardiac inward rectifier potassium currents by KB-R7943.

Science.gov (United States)

Abramochkin, Denis V; Alekseeva, Eugenia I; Vornanen, Matti

2013-09-01

KB-R7943 (2-[2-[4-(4-nitrobenzyloxy)phenyl]ethyl]isothiourea) was developed as a specific inhibitor of the sarcolemmal sodium-calcium exchanger (NCX) with potential experimental and therapeutic use. However, KB-R7943 is shown to be a potent blocker of several ion currents including inward and delayed rectifier K(+) currents of cardiomyocytes. To further characterize KB-R7943 as a blocker of the cardiac inward rectifiers we compared KB-R7943 sensitivity of the background inward rectifier (IK1) and the carbacholine-induced inward rectifier (IKACh) currents in mammalian (Rattus norvegicus; rat) and fish (Carassius carassius; crucian carp) cardiac myocytes. The basal IK1 of ventricular myocytes was blocked with apparent IC50-values of 4.6×10(-6) M and 3.5×10(-6) M for rat and fish, respectively. IKACh was almost an order of magnitude more sensitive to KB-R7943 than IK1 with IC50-values of 6.2×10(-7) M for rat and 2.5×10(-7) M for fish. The fish cardiac NCX current was half-maximally blocked at the concentration of 1.9-3×10(-6) M in both forward and reversed mode of operation. Thus, the sensitivity of three cardiac currents to KB-R7943 block increases in the order IK1~INCXrectifier potassium currents, in particular IKACh, should be taken into account when interpreting the data with this inhibitor from in vivo and in vitro experiments in both mammalian and fish models. © 2013.

2016 NOAA NGS Ortho-rectified Color Mosaic of Anchorage, Alaska

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2016 NOAA NGS Ortho-rectified Color Mosaic of Whittier, Alaska

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2016 NOAA NGS Ortho-rectified Color Mosaic of Cleveland, Ohio

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2010 NOAA Ortho-rectified Mosaic of Lake Michigan - West Coast

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

Microfluidic rectifier based on poly(dimethylsiloxane) membrane and its application to a micropump.

Science.gov (United States)

Wang, Yao-Nan; Tsai, Chien-Hsiung; Fu, Lung-Ming; Lin Liou, Lung-Kai

2013-01-01

A microfluidic rectifier incorporating an obstructed microchannel and a PDMS membrane is proposed. During forward flow, the membrane deflects in the upward direction; thereby allowing the fluid to pass over the obstacle. Conversely, during reverse flow, the membrane seals against the obstacle, thereby closing the channel and preventing flow. It is shown that the proposed device can operate over a wide pressure range by increasing or decreasing the membrane thickness as required. A microfluidic pump is realized by integrating the rectifier with a simple stepper motor mechanism. The experimental results show that the pump can achieve a vertical left height of more than 2 m. Moreover, it is shown that a maximum flow rate of 6.3 ml/min can be obtained given a membrane thickness of 200 μm and a motor velocity of 80 rpm. In other words, the proposed microfluidic rectifier not only provides an effective means of preventing reverse flow but also permits the realization of a highly efficient microfluidic pump.

Molecular Basis of Cardiac Delayed Rectifier Potassium Channel Function and Pharmacology.

Science.gov (United States)

Wu, Wei; Sanguinetti, Michael C

2016-06-01

Human cardiomyocytes express 3 distinct types of delayed rectifier potassium channels. Human ether-a-go-go-related gene (hERG) channels conduct the rapidly activating current IKr; KCNQ1/KCNE1 channels conduct the slowly activating current IKs; and Kv1.5 channels conduct an ultrarapid activating current IKur. Here the authors provide a general overview of the mechanistic and structural basis of ion selectivity, gating, and pharmacology of the 3 types of cardiac delayed rectifier potassium ion channels. Most blockers bind to S6 residues that line the central cavity of the channel, whereas activators interact with the channel at 4 symmetric binding sites outside the cavity. Copyright © 2016 Elsevier Inc. All rights reserved.

Effect of lycium barbarum polysaccharides on high glucose-induced retinal ganglion cell apoptosis, gene expression and delayed rectifier potassium current

Directory of Open Access Journals (Sweden)

Xiao-Fei Ma

2017-05-01

Full Text Available Objective: To study the effect of lycium barbarum polysaccharides (LBP on high glucoseinduced retinal ganglion cell apoptosis, gene expression and delayed rectifier potassium current. Methods: RGC-5 retinal ganglion cell lines were cultured and divided into control group, high glucose group and LBP group that were treated with normal DMEM, highglucose DMEM as well as high-glucose DMEM containing 500 ng/mL LBP respectively. After treatment, the Annexin V-FITC/PI kits were used to measure the number of apoptotic cells, fluorescence quantitative PCR kits were used to determine the expression of apoptosis genes and antioxidant genes, and patch clamp was used to test delayed rectifier potassium current. Results: 12, 24, 36 and 48 h after intervention, the number of apoptotic cells of high glucose group was significantly higher than that of control group, and the number of apoptotic cells of LBP group was significantly lower than that of high glucose group (P<0.05; 24 and 48 h after intervention, c-fos, c-jun, caspase-3, caspase-9, Nrf-2, NQO1 and HO-1 mRNA expression as well as potassium current amplitude (IK and maximum conductance (Gmax of high glucose group were significantly higher than those of control group while half maximum activation voltage (V1/2 was significantly lower than that of control group (P<0.05; c-fos, c-jun, caspase-3 and caspase-9 mRNA expression as well as IK and Gmax of LBP group were significantly lower than those of high glucose group, while Nrf-2, NQO1 and HO-1 mRNA expression as well as V1/2 of LBP group were significantly higher than those of high glucose group (P<0.05. Conclusions: LBP can reduce the high glucose-induced retinal ganglion cell apoptosis and inhibit the delayed rectifier potassium current amplitude.

A Single MO-CFTA Based Electronically/Temperature Insensitive Current-mode Half-wave and Full-wave Rectifiers

OpenAIRE

Weerapon Kongnun; Phamorn Silapan

2013-01-01

The article presents a current-mode full-wave rectifier employing multiple output current follower transconductance amplifier (MO-CFTA). The both circuits description is very simple, it merely comprises only single MO-CFTA, without external passive element. In addition, the magnitude and direction of output currents can be controlled via electronically method. Furthermore, the outputs are independent of the thermal voltage (VT). The performances of the proposed circuits are investigated thro...

The Approach for Optimization of Transmission over Power Links using the Thyristor-Controlled Series Compensation

Directory of Open Access Journals (Sweden)

Fatima Zohra GHERBI

2008-07-01

Full Text Available The energy transportation networks can be improved by multiplying or creating new lines. This is not always the case for various reasons. The series capacities controlled by SCRs (Silicon Controlled Rectifiers represent a good alternative to optimize the existing or the new electric links, because they allow the increase of the dynamic stability, the damping of the power oscillations, while balancing the loads between the parallel circuits. This paper presents a resolution method to the power distribution by inserting the TCSC transit controller in the network. The insertion of the TCSC devices has given satisfying results that are, an increase of the transmitted active power and reduction of active losses, an improvement of the angular stability and the voltage stability without decreasing the transportation capacity.

Fluorescence and thermoluminescence in silicon oxide films rich in silicon

International Nuclear Information System (INIS)

Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

2009-10-01

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

Directory of Open Access Journals (Sweden)

Kae Dal Kwack

2011-01-01

Full Text Available A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

Science.gov (United States)

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

Science.gov (United States)

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Position-controlled epitaxial III-V nanowires on silicon

Energy Technology Data Exchange (ETDEWEB)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

2006-06-14

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

Position-controlled epitaxial III-V nanowires on silicon

International Nuclear Information System (INIS)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

Controlling growth density and patterning of single crystalline silicon nanowires

International Nuclear Information System (INIS)

Chang, Tung-Hao; Chang, Yu-Cheng; Liu, Fu-Ken; Chu, Tieh-Chi

2010-01-01

This study examines the usage of well-patterned Au nanoparticles (NPs) as a catalyst for one-dimensional growth of single crystalline Si nanowires (NWs) through the vapor-liquid-solid (VLS) mechanism. The study reports the fabrication of monolayer Au NPs through the self-assembly of Au NPs on a 3-aminopropyltrimethoxysilane (APTMS)-modified silicon substrate. Results indicate that the spin coating time of Au NPs plays a crucial role in determining the density of Au NPs on the surface of the silicon substrate and the later catalysis growth of Si NWs. The experiments in this study employed optical lithography to pattern Au NPs, treating them as a catalyst for Si NW growth. The patterned Si NW structures easily produced and controlled Si NW density. This approach may be useful for further studies on single crystalline Si NW-based nanodevices and their properties.

Subcellular localization of the delayed rectifier K(+) channels KCNQ1 and ERG1 in the rat heart

DEFF Research Database (Denmark)

Rasmussen, Hanne Borger; Møller, Morten; Knaus, Hans-Günther

2003-01-01

In the heart, several K(+) channels are responsible for the repolarization of the cardiac action potential, including transient outward and delayed rectifier K(+) currents. In the present study, the cellular and subcellular localization of the two delayed rectifier K(+) channels, KCNQ1 and ether...

Use of hydroxypropylmethylcellulose 2% for removing adherent silicone oil from silicone intraocular lenses

OpenAIRE

Wong , S Chien; Ramkissoon , Yashin D; Lopez , Mauricio; Page , Kristopher; Parkin , Ivan P; Sullivan , Paul M

2009-01-01

Abstract Background / aims: To investigate the effect of hydroxypropylmethylcellulose (HPMC) on the physical interaction (contact angle) between silicone oil and a silicone intraocular lens (IOL). Methods: In vitro experiments were performed, to determine the effect of HPMC (0.5%, 1% or 2%), with or without an additional simple mechanical manoeuvre, on the contact angle of silicone oil at the surface of both silicone and acrylic (control) IOLs. A balanced salt solu...

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

Science.gov (United States)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

A Novel High Bandwidth Current Control Strategy for SiC mosfet Based Active Front-End Rectifiers Under Unbalanced Input Voltage Conditions

DEFF Research Database (Denmark)

Maheshwari, Ramkrishan; Trintis, Ionut; Török, Lajos

2017-01-01

SiC mosfet based converters are capable of high switching frequency operation. In this paper, the converter is operated with 50-kHz switching frequency for an active front-end rectifier application. Due to high switching frequency, the grid-side filter size is reduced, and the possibility of a high...

Differential roles of two delayed rectifier potassium currents in regulation of ventricular action potential duration and arrhythmia susceptibility.

Science.gov (United States)

Devenyi, Ryan A; Ortega, Francis A; Groenendaal, Willemijn; Krogh-Madsen, Trine; Christini, David J; Sobie, Eric A

2017-04-01

Arrhythmias result from disruptions to cardiac electrical activity, although the factors that control cellular action potentials are incompletely understood. We combined mathematical modelling with experiments in heart cells from guinea pigs to determine how cellular electrical activity is regulated. A mismatch between modelling predictions and the experimental results allowed us to construct an improved, more predictive mathematical model. The balance between two particular potassium currents dictates how heart cells respond to perturbations and their susceptibility to arrhythmias. Imbalances of ionic currents can destabilize the cardiac action potential and potentially trigger lethal cardiac arrhythmias. In the present study, we combined mathematical modelling with information-rich dynamic clamp experiments to determine the regulation of action potential morphology in guinea pig ventricular myocytes. Parameter sensitivity analysis was used to predict how changes in ionic currents alter action potential duration, and these were tested experimentally using dynamic clamp, a technique that allows for multiple perturbations to be tested in each cell. Surprisingly, we found that a leading mathematical model, developed with traditional approaches, systematically underestimated experimental responses to dynamic clamp perturbations. We then re-parameterized the model using a genetic algorithm, which allowed us to estimate ionic current levels in each of the cells studied. This unbiased model adjustment consistently predicted an increase in the rapid delayed rectifier K + current and a drastic decrease in the slow delayed rectifier K + current, and this prediction was validated experimentally. Subsequent simulations with the adjusted model generated the clinically relevant prediction that the slow delayed rectifier is better able to stabilize the action potential and suppress pro-arrhythmic events than the rapid delayed rectifier. In summary, iterative coupling of

A thermally switched 9 kA superconducting rectifier fluxpump

NARCIS (Netherlands)

ten Kate, Herman H.J.; Bunk, Paul B.; Steffens, Harry A.; van de Klundert, Louis J.M.

1981-01-01

The feasibility of superconducting rectifier-fluxpumps has to be demonstrated at current levels of 10 - 100 kA, where is asked for in the superconducting devices now being planned. An intensive program has been started at the low temperature division of the University of Twente to construct such

Single-Phase Active Boost Rectifier with Power Factor Correction for Wireless Power Transfer Applications

Energy Technology Data Exchange (ETDEWEB)

Chinthavali, Madhu Sudhan [ORNL; Onar, Omer C [ORNL; Miller, John M [ORNL; Tang, Lixin [ORNL

2013-01-01

Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized to compensate for the change in the impedance. To understand the power flow through the system this paper presents a novel approach to the system model and the impact of different control parameters on the load power. The implementation of an active front-end rectifier on the grid side for power factor control and voltage boost capability for load power regulation is also discussed.

Influence of cavitation bubble growth by rectified diffusion on cavitation-enhanced HIFU

Science.gov (United States)

Okita, Kohei; Sugiyama, Kazuyasu; Takagi, Shu; Matsumoto, Yoichiro

2017-11-01

Cavitation is becoming increasingly important in therapeutic ultrasound applications such as diagnostic, tumor ablation and lithotripsy. Mass transfer through gas-liquid interface due to rectified diffusion is important role in an initial stage of cavitation bubble growth. In the present study, influences of the rectified diffusion on cavitation-enhanced high-intensity focused ultrasound (HIFU) was investigated numerically. Firstly, the mass transfer rate of gas from the surrounding medium to the bubble was examined as function of the initial bubble radius and the driving pressure amplitude. As the result, the pressure required to bubble growth was decreases with increasing the initial bubble radius. Next, the cavitation-enhanced HIFU, which generates cavitation bubbles by high-intensity burst and induces the localized heating owing to cavitation bubble oscillation by low-intensity continuous waves, was reproduced by the present simulation. The heating region obtained by the simulation is agree to the treatment region of an in vitro experiment. Additionally, the simulation result shows that the localized heating is enhanced by the increase of the equilibrium bubble size due to the rectified diffusion. This work was supported by JSPS KAKENHI Grant Numbers JP26420125,JP17K06170.

Rectifying calibration error of Goldmann applanation tonometer is easy!

Directory of Open Access Journals (Sweden)

Nikhil S Choudhari

2014-01-01

Full Text Available Purpose: Goldmann applanation tonometer (GAT is the current Gold standard tonometer. However, its calibration error is common and can go unnoticed in clinics. Its company repair has limitations. The purpose of this report is to describe a self-taught technique of rectifying calibration error of GAT. Materials and Methods: Twenty-nine slit-lamp-mounted Haag-Streit Goldmann tonometers (Model AT 900 C/M; Haag-Streit, Switzerland were included in this cross-sectional interventional pilot study. The technique of rectification of calibration error of the tonometer involved cleaning and lubrication of the instrument followed by alignment of weights when lubrication alone didn′t suffice. We followed the South East Asia Glaucoma Interest Group′s definition of calibration error tolerance (acceptable GAT calibration error within ±2, ±3 and ±4 mm Hg at the 0, 20 and 60-mm Hg testing levels, respectively. Results: Twelve out of 29 (41.3% GATs were out of calibration. The range of positive and negative calibration error at the clinically most important 20-mm Hg testing level was 0.5 to 20 mm Hg and -0.5 to -18 mm Hg, respectively. Cleaning and lubrication alone sufficed to rectify calibration error of 11 (91.6% faulty instruments. Only one (8.3% faulty GAT required alignment of the counter-weight. Conclusions: Rectification of calibration error of GAT is possible in-house. Cleaning and lubrication of GAT can be carried out even by eye care professionals and may suffice to rectify calibration error in the majority of faulty instruments. Such an exercise may drastically reduce the downtime of the Gold standard tonometer.

Simulation of rectifier voltage malfunction on OWECS, four-level converter, HVDC light link: Smart grid context tool

International Nuclear Information System (INIS)

Seixas, M.; Melício, R.; Mendes, V.M.F.

2015-01-01

Highlights: • Floating offshore wind turbine in deep water. • DC link and voltage malfunction. • Converter topology considered is four-level. • Controllers are based on fractional-order. • Smart grid context. - Abstract: This paper presents a model for the simulation of an offshore wind system having a rectifier input voltage malfunction at one phase. The offshore wind system model comprises a variable-speed wind turbine supported on a floating platform, equipped with a permanent magnet synchronous generator using full-power four-level neutral point clamped converter. The link from the offshore floating platform to the onshore electrical grid is done through a light high voltage direct current submarine cable. The drive train is modeled by a three-mass model. Considerations about the smart grid context are offered for the use of the model in such a context. The rectifier voltage malfunction domino effect is presented as a case study to show capabilities of the model

in Nigeria OKORHI, OJ

African Journals Online (AJOL)

ADOWIE PERE

2017-11-06

Nov 6, 2017 ... 1Institute of Engineering, Technology, and Innovation Management (METI), University of Port ... inclusive global treaty addressing the WEEE .... Power supply boxes which contain silicon controlled rectifiers and x-ray lenses .... food chain, particularly ..... recovery logistics network of Waste Electronic and.

Rectified heat transfer into translating and pulsating vapor bubbles

NARCIS (Netherlands)

Hao, Y.; Prosperetti, Andrea

2002-01-01

It is well known that, when a stationary vapor bubble is subject to a sufficiently intense acoustic field, it will grow by rectified heat transfer even in a subcooled liquid. The object of this paper is to study how translation, and the ensuing convective effects, influence this process. It is shown

Silicon-controlled-rectifier square-wave inverter with protection against commutation failure

Science.gov (United States)

Birchenough, A. G.

1971-01-01

The square-wave SCR inverter that was designed, built, and tested includes a circuit to turn off the inverter in case of commutation failure. The basic power stage is a complementary impulse-commutated parallel inverter consisting of only six components. The 400-watt breadboard was tested while operating at + or - 28 volts, and it had a peak efficiency of 95.5 percent at 60 hertz and 91.7 percent at 400 hertz. The voltage regulation for a fixed input was 3 percent at 60 hertz. An analysis of the operation and design information is included.

Adding rectifying/stripping section type heat integration to a pressure-swing distillation (PSD) process

International Nuclear Information System (INIS)

Huang Kejin; Shan Lan; Zhu Qunxiong; Qian Jixin

2008-01-01

This paper studies the economical effect of considering rectifying/stripping section type heat integration in a pressure-swing distillation (PSD) process separating a binary homogeneous pressure-sensitive azeotrope. The schemes for arranging heat integration between the rectifying section and the stripping section of the high- and low-pressure distillation columns, respectively, are derived and an effective procedure is devised for the conceptual process design of the heat-integrated PSD processes. In terms of the separation of a binary azeotropic mixture of acetonitrile and water, intensive comparisons are made between the conventional and heat-integrated PSD processes. It is demonstrated that breaking a pressure-sensitive azeotropic mixture can be made more economical than the current practice with the conventional PSD process. For boosting further the thermodynamic efficiency of a PSD process, it is strongly suggested to consider simultaneously the condenser/reboiler type heat integration with the rectifying/stripping section type heat integration in process synthesis and design

Adding rectifying/stripping section type heat integration to a pressure-swing distillation (PSD) process

Energy Technology Data Exchange (ETDEWEB)

Huang Kejin [School of Information Science and Technology, Beijing University of Chemical Technology, Chaoyang-qu, Beijing-shi, Beijing 100029 (China)], E-mail: huangkj@mail.buct.edu.cn; Shan Lan; Zhu Qunxiong [School of Information Science and Technology, Beijing University of Chemical Technology, Chaoyang-qu, Beijing-shi, Beijing 100029 (China); Qian Jixin [School of Information Science and Technology, Zhejiang University, Xihu-qu, Hangzhou-shi, Zhejiang 300027 (China)

2008-06-15

This paper studies the economical effect of considering rectifying/stripping section type heat integration in a pressure-swing distillation (PSD) process separating a binary homogeneous pressure-sensitive azeotrope. The schemes for arranging heat integration between the rectifying section and the stripping section of the high- and low-pressure distillation columns, respectively, are derived and an effective procedure is devised for the conceptual process design of the heat-integrated PSD processes. In terms of the separation of a binary azeotropic mixture of acetonitrile and water, intensive comparisons are made between the conventional and heat-integrated PSD processes. It is demonstrated that breaking a pressure-sensitive azeotropic mixture can be made more economical than the current practice with the conventional PSD process. For boosting further the thermodynamic efficiency of a PSD process, it is strongly suggested to consider simultaneously the condenser/reboiler type heat integration with the rectifying/stripping section type heat integration in process synthesis and design.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

OpenAIRE

K?nig, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusi...

Position-controlled epitaxial III-V nanowires on silicon

NARCIS (Netherlands)

Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

Performance evaluation of a rectifier column using gamma column scanning

Directory of Open Access Journals (Sweden)

Aquino Denis D.

2017-12-01

Full Text Available Rectifier columns are considered to be a critical component in petroleum refineries and petrochemical processing installations as they are able to affect the overall performance of these facilities. It is deemed necessary to monitor the operational conditions of such vessels to optimize processes and prevent anomalies which could pose undesired consequences on product quality that might lead to huge financial losses. A rectifier column was subjected to gamma scanning using a 10-mCi Co-60 source and a 2-inch-long detector in tandem. Several scans were performed to gather information on the operating conditions of the column under different sets of operating parameters. The scan profiles revealed unexpected decreases in the radiation intensity at vapour levels between trays 2 and 3, and between trays 4 and 5. Flooding also occurred during several scans which could be attributed to parametric settings.

2016 NOAA NGS Ortho-rectified Near-Infrared Mosaic of Cleveland, Ohio

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2016 NOAA NGS Ortho-rectified Color Mosaic of Baton Rouge, Louisiana

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2012 NOAA Ortho-rectified Color Mosaic of Bremerton and Manchester, Washington

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

Controlling the Er content of porous silicon using the doping current intensity

KAUST Repository

Mula, Guido

2014-07-04

The results of an investigation on the Er doping of porous silicon are presented. Electrochemical impedance spectroscopy, optical reflectivity, and spatially resolved energy dispersive spectroscopy (EDS) coupled to scanning electron microscopy measurements were used to investigate on the transient during the first stages of constant current Er doping. Depending on the applied current intensity, the voltage transient displays two very different behaviors, signature of two different chemical processes. The measurements show that, for equal transferred charge and identical porous silicon (PSi) layers, the applied current intensity also influences the final Er content. An interpretative model is proposed in order to describe the two distinct chemical processes. The results can be useful for a better control over the doping process.

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

2005-01-01

Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

Regenerative Snubber For GTO-Commutated SCR Inverter

Science.gov (United States)

Rippel, Wally E.; Edwards, Dean B.

1992-01-01

Proposed regenerative snubbing circuit substituted for dissipative snubbing circuit in inverter based on silicon controlled rectifiers (SCR's) commutated by gate-turn-off thyristor (GTO). Intended to reduce loss of power that occurs in dissipative snubber. Principal criteria in design: low cost, simplicity, and reliability.

Preliminary results of a battery-based, multi megawatt 200 kA pulsed power supply.

NARCIS (Netherlands)

Karthaus, W.; Kolkert, W.J.; Nowee, J.

1989-01-01

A pulsed power supply consisting of a fast discharge battery, a switch based on silicon-controlled-rectifier SCR technology, and an energy storage/pulse transformer is discussed. Preliminary results indicate that the battery is capable of discharging current pulses with reproducible peak values of

Low cost SCR lamp driver indicates contents of digital computer registers

Science.gov (United States)

Cliff, R. A.

1967-01-01

Silicon Controlled Rectifier /SCR/ lamp driver is adapted for use in integrated circuit digital computers where it indicates the contents of the various registers. The threshold voltage at which visual indication begins is very sharply defined and can be adjusted to suit particular system requirements.

A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

International Nuclear Information System (INIS)

Wang Ying; Jiao Wen-Li; Hu Hai-Fan; Liu Yun-Tao; Cao Fei

2012-01-01

An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor (UMOSFET) integrated with a Schottky rectifier is proposed. In this device, a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET. Specific on-resistances of 7.7 mΩ·mm 2 and 6.5 mΩ·mm 2 for the gate bias voltages of 5 V and 10 V are achieved, respectively, and the breakdown voltage is 61 V. The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET. (condensed matter: structural, mechanical, and thermal properties)

Rectifier analysis for radio frequency energy harvesting and power transport

NARCIS (Netherlands)

Keyrouz, S.; Visser, H.J.; Tijhuis, A.G.

2012-01-01

Wireless Power Transmission (WPT) is an attractive powering method for wireless sensor nodes, battery-less sensors, and Radio-Frequency Identification (RFID) tags. The key element on the receiving side of a WPT system is the rectifying antenna (rectenna) which captures the electromagnetic power and

Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

Science.gov (United States)

Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

2008-11-01

Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

Specific residues of the cytoplasmic domains of cardiac inward rectifier potassium channels are effective antifibrillatory targets

Science.gov (United States)

Noujaim, Sami F.; Stuckey, Jeanne A.; Ponce-Balbuena, Daniela; Ferrer-Villada, Tania; López-Izquierdo, Angelica; Pandit, Sandeep; Calvo, Conrado J.; Grzeda, Krzysztof R.; Berenfeld, Omer; Sánchez Chapula, José A.; Jalife, José

2010-01-01

Atrial and ventricular tachyarrhythmias can be perpetuated by up-regulation of inward rectifier potassium channels. Thus, it may be beneficial to block inward rectifier channels under conditions in which their function becomes arrhythmogenic (e.g., inherited gain-of-function mutation channelopathies, ischemia, and chronic and vagally mediated atrial fibrillation). We hypothesize that the antimalarial quinoline chloroquine exerts potent antiarrhythmic effects by interacting with the cytoplasmic domains of Kir2.1 (IK1), Kir3.1 (IKACh), or Kir6.2 (IKATP) and reducing inward rectifier potassium currents. In isolated hearts of three different mammalian species, intracoronary chloroquine perfusion reduced fibrillatory frequency (atrial or ventricular), and effectively terminated the arrhythmia with resumption of sinus rhythm. In patch-clamp experiments chloroquine blocked IK1, IKACh, and IKATP. Comparative molecular modeling and ligand docking of chloroquine in the intracellular domains of Kir2.1, Kir3.1, and Kir6.2 suggested that chloroquine blocks or reduces potassium flow by interacting with negatively charged amino acids facing the ion permeation vestibule of the channel in question. These results open a novel path toward discovering antiarrhythmic pharmacophores that target specific residues of the cytoplasmic domain of inward rectifier potassium channels.—Noujaim, S. F., Stuckey, J. A., Ponce-Balbuena, D., Ferrer-Villada, T., López-Izquierdo, A., Pandit, S., Calvo, C. J., Grzeda, K. R., Berenfeld, O., Sánchez Chapula, J. A., Jalife, J. Specific residues of the cytoplasmic domains of cardiac inward rectifier potassium channels are effective antifibrillatory targets. PMID:20585026

Controlled delivery of acyclovir from porous silicon micro- and nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Maniya, Nalin H.; Patel, Sanjaykumar R.; Murthy, Z.V.P., E-mail: zvpm2000@yahoo.com

2015-03-01

Graphical abstract: - Highlights: • Porous silicon (PSi) was fabricated by electrochemical etching process. • Micro- and nanoparticles were prepared by ultrasonic fracture of PSi films. • Acyclovir was loaded into native, oxidized, and hydrosilylated PSi particles. • Micro- and nanoparticles displays controlled release behaviour for several days. • Drug release behaviour and release kinetics from PSi particles were studied. - Abstract: In this work, micro- and nanoparticles of porous silicon (PSi) are demonstrated to act as effective carrier for the controlled delivery of acyclovir (ACV). PSi films prepared by electrochemical etching were fractured by ultrasonication to prepare micro- and nanoparticles. PSi native particles were thermally oxidized (TOPSi) and thermally hydrosilylated using undecylenic acid (UnPSi). PSi particles with three different surface chemistries were then loaded with ACV by physical adsorption and covalent attachment. Such particles were characterized by scanning electron microscopy, dynamic light scattering, and Fourier transform infrared spectroscopy. In vitro ACV release experiments in phosphate buffered saline showed sustained release behaviour from both micro- and nanoparticles and order of release was found to be native PSi > TOPSi > UnPSi. Drug release kinetics study using Korsmeyer-Peppas model suggested a combination of both drug diffusion and Si scaffold erosion based drug release mechanisms.

Controlled delivery of acyclovir from porous silicon micro- and nanoparticles

International Nuclear Information System (INIS)

Maniya, Nalin H.; Patel, Sanjaykumar R.; Murthy, Z.V.P.

2015-01-01

Graphical abstract: - Highlights: • Porous silicon (PSi) was fabricated by electrochemical etching process. • Micro- and nanoparticles were prepared by ultrasonic fracture of PSi films. • Acyclovir was loaded into native, oxidized, and hydrosilylated PSi particles. • Micro- and nanoparticles displays controlled release behaviour for several days. • Drug release behaviour and release kinetics from PSi particles were studied. - Abstract: In this work, micro- and nanoparticles of porous silicon (PSi) are demonstrated to act as effective carrier for the controlled delivery of acyclovir (ACV). PSi films prepared by electrochemical etching were fractured by ultrasonication to prepare micro- and nanoparticles. PSi native particles were thermally oxidized (TOPSi) and thermally hydrosilylated using undecylenic acid (UnPSi). PSi particles with three different surface chemistries were then loaded with ACV by physical adsorption and covalent attachment. Such particles were characterized by scanning electron microscopy, dynamic light scattering, and Fourier transform infrared spectroscopy. In vitro ACV release experiments in phosphate buffered saline showed sustained release behaviour from both micro- and nanoparticles and order of release was found to be native PSi > TOPSi > UnPSi. Drug release kinetics study using Korsmeyer-Peppas model suggested a combination of both drug diffusion and Si scaffold erosion based drug release mechanisms

Silicon containing copolymers

CERN Document Server

Amiri, Sahar; Amiri, Sanam

2014-01-01

Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

2014 NOAA Ortho-rectified Mosaic of Hurricane Sandy Coastal Impact Area

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles at 0.35m GSD created for NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative in Hurricane Sandy coastal...

Frequency Support from OWPPs connected to HVDC via Diode Rectifiers

DEFF Research Database (Denmark)

Saborío-Romano, Oscar; Bidadfar, Ali; Göksu, Ömer

This paper presents a study assessing the actual capability of an offshore wind power plant (offshore WPP, OWPP) to provide frequency support (FS) to an onshore network, when connected through a high-voltage direct-current (HVDC) link having a diode rectifier (DR) offshore terminal and a voltage...

Creating and Controlling Single Spins in Silicon Carbide

Science.gov (United States)

Christle, David

Silicon carbide (SiC) is a well-established commercial semiconductor used in high-power electronics, optoelectronics, and nanomechanical devices, and has recently shown promise for semiconductor-based implementations of quantum information technologies. In particular, a set of divacancy-related point defects have improved coherence properties relative to the prominent nitrogen-vacancy center in diamond, are addressable at near-telecom wavelengths, and reside in a material for which there already exist advanced growth, doping, and microfabrication capabilities. These properties suggest divacancies in SiC have compelling advantages for photonics and micromechanical applications, yet their relatively recent discovery means crucial aspects of their fundamental physics for these applications are not well understood. I will review our progress on manipulating spin defects in SiC, and discuss efforts towards isolating and controlling them at the single defect limit. In particular, our most recent experimental results demonstrate isolation and control of long-lived (T2 = 0 . 9 ms) divacancies in a form of SiC that can be grown epitaxially on silicon. By studying the time-resolved photoluminescence of a single divacancy, we reveal its fundamental orbital structure and characterize in detail the dynamics of its special optical cycle. Finally, we probe individual divacancies using resonant laser techniques and reveal an efficient spin-photon interface with figures of merit comparable to those reported for NV centers in diamond. These results suggest a pathway towards photon-mediated entanglement of SiC defect spins over long distances. This work was supported by NSF, AFOSR, the Argonne CNM, the Knut & Alice Wallenberg Foundation, the Linköping Linnaeus Initiative, the Swedish Government Strategic Research Area, and the Ministry of Education, Science, Sports and Culture of Japan.

Current status of self rectifying air turbines for wave energy conversion

International Nuclear Information System (INIS)

Setoguchi, Toshiaki; Takao, Manabu

2006-01-01

This paper reviews the present state of the art on self rectifying air turbines, which could be used for wave energy conversion. The overall performances of the turbines under irregular wave conditions, which typically occur in the sea, have been evaluated numerically and compared from the viewpoints of their starting and running characteristics. The types of turbine included in the paper are: (a) Wells turbine with guide vanes (WTGV); (b) turbine with self-pitch-controlled blades (TSCB); (c) biplane Wells turbine with guide vanes (BWGV); (d) impulse turbine with self-pitch-controlled guide vanes (ISGV); and (e) impulse turbine with fixed guide vanes (IFGV). As a result, under irregular wave conditions, it is found that the running and starting characteristics of impulse type turbines could be superior to those of the Wells turbine. Moreover, the authors have explained the mechanism of the hysteretic behavior of the Wells turbine and the necessity of links for improvement of the performance of the ISGV

Commutating Permanent-Magnet Motors At Low Speed

Science.gov (United States)

Dolland, C.

1985-01-01

Circuit provides forced commutation during starting. Forced commutation circuit diverts current from inverter SCR's and turns SCR's off during commutation intervals. Silicon controlled rectifier in circuit unnecessary when switch S10 replaced by high-current, high-voltage transistor. At present, high-current, low-voltage device must suffice.

Power supply trip control for nuclear reactor

International Nuclear Information System (INIS)

Hager, R.E.; Gutman, Jerzy.

1987-01-01

A control system for a trip coil in a switchgear mechanism controls the supply of electrical power to a process control device and ensures de-energization of the trip coil shortly after the trip coil is energized. The trip coil is energized not by an independent dc source as in prior art, but from rectified power from a step down transformer supplied from the switchgear output side. The transformer feeds a rectifier which is connected to the trip coil via a trip activation device. The output of the rectifier can be monitored using an optical converter to determine the ability of the control system to activate the trip coil and the condition of the power supplied to the process control device. The control device may be a rod positioner in a pressurised water nuclear reactor. (author)

Aviram–Ratner rectifying mechanism for DNA base-pair sequencing through graphene nanogaps

International Nuclear Information System (INIS)

Agapito, Luis A; Gayles, Jacob; Wolowiec, Christian; Kioussis, Nicholas

2012-01-01

We demonstrate that biological molecules such as Watson–Crick DNA base pairs can behave as biological Aviram–Ratner electrical rectifiers because of the spatial separation and weak hydrogen bonding between the nucleobases. We have performed a parallel computational implementation of the ab initio non-equilibrium Green’s function (NEGF) theory to determine the electrical response of graphene—base-pair—graphene junctions. The results show an asymmetric (rectifying) current–voltage response for the cytosine–guanine base pair adsorbed on a graphene nanogap. In sharp contrast we find a symmetric response for the thymine–adenine case. We propose applying the asymmetry of the current–voltage response as a sensing criterion to the technological challenge of rapid DNA sequencing via graphene nanogaps. (paper)

Control of the Gas Flow in an Industrial Directional Solidification Furnace for Production of High Purity Multicrystalline Silicon Ingots

Directory of Open Access Journals (Sweden)

Lijun Liu

2015-01-01

Full Text Available A crucible cover was designed as gas guidance to control the gas flow in an industrial directional solidification furnace for producing high purity multicrystalline silicon. Three cover designs were compared to investigate their effect on impurity transport in the furnace and contamination of the silicon melt. Global simulations of coupled oxygen (O and carbon (C transport were carried out to predict the SiO and CO gases in the furnace as well as the O and C distributions in the silicon melt. Cases with and without chemical reaction on the cover surfaces were investigated. It was found that the cover design has little effect on the O concentration in the silicon melt; however, it significantly influences CO gas transport in the furnace chamber and C contamination in the melt. For covers made of metal or with a coating on their surfaces, an optimal cover design can produce a silicon melt free of C contamination. Even for a graphite cover without a coating, the carbon concentration in the silicon melt can be reduced by one order of magnitude. The simulation results demonstrate a method to control the contamination of C impurities in an industrial directional solidification furnace by crucible cover design.

Silicon Qubits

Energy Technology Data Exchange (ETDEWEB)

Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2018-02-28

Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

Inward rectifier potassium currents in mammalian skeletal muscle fibres

Science.gov (United States)

DiFranco, Marino; Yu, Carl; Quiñonez, Marbella; Vergara, Julio L

2015-01-01

Inward rectifying potassium (Kir) channels play a central role in maintaining the resting membrane potential of skeletal muscle fibres. Nevertheless their role has been poorly studied in mammalian muscles. Immunohistochemical and transgenic expression were used to assess the molecular identity and subcellular localization of Kir channel isoforms. We found that Kir2.1 and Kir2.2 channels were targeted to both the surface andthe transverse tubular system membrane (TTS) compartments and that both isoforms can be overexpressed up to 3-fold 2 weeks after transfection. Inward rectifying currents (IKir) had the canonical features of quasi-instantaneous activation, strong inward rectification, depended on the external [K+], and could be blocked by Ba2+ or Rb+. In addition, IKir records show notable decays during large 100 ms hyperpolarizing pulses. Most of these properties were recapitulated by model simulations of the electrical properties of the muscle fibre as long as Kir channels were assumed to be present in the TTS. The model also simultaneously predicted the characteristics of membrane potential changes of the TTS, as reported optically by a fluorescent potentiometric dye. The activation of IKir by large hyperpolarizations resulted in significant attenuation of the optical signals with respect to the expectation for equal magnitude depolarizations; blocking IKir with Ba2+ (or Rb+) eliminated this attenuation. The experimental data, including the kinetic properties of IKir and TTS voltage records, and the voltage dependence of peak IKir, while measured at widely dissimilar bulk [K+] (96 and 24 mm), were closely predicted by assuming Kir permeability (PKir) values of ∼5.5 × 10−6 cm s−1 and equal distribution of Kir channels at the surface and TTS membranes. The decay of IKir records and the simultaneous increase in TTS voltage changes were mostly explained by K+ depletion from the TTS lumen. Most importantly, aside from allowing an accurate estimation of

Development of fluorocarbon evaporative cooling recirculators and controls for the ATLAS inner silicon tracker

CERN Document Server

Bayer, C; Bonneau, P; Bosteels, Michel; Burckhart, H J; Cragg, D; English, R; Hallewell, G D; Hallgren, Björn I; Ilie, S; Kersten, S; Kind, P; Langedrag, K; Lindsay, S; Merkel, M; Stapnes, Steinar; Thadome, J; Vacek, V

2000-01-01

We report on the development of evaporative fluorocarbon cooling recirculators and their control systems for the ATLAS inner silicon tracker. We have developed a prototype circulator using a dry, hermetic compressor with C/sub 3/F/sup 8/ refrigerant, and have prototyped the remote-control analog pneumatic links for the regulation of coolant mass flows and operating temperatures that will be necessary in the magnetic field and radiation environment around ATLAS. pressure and flow measurement and control use 150+ channels of standard ATLAS LMB ("Local Monitor Board") DAQ and DACs on a multi-drop CAN network administered through a BridgeVIEW user interface. A hardwired thermal interlock system has been developed to cut power to individual silicon modules should their temperatures exceed safe values. Highly satisfactory performance of the circulator under steady state, partial-load and transient conditions was seen, with proportional fluid flow tuned to varying circuit power. Future developments, including a 6 kW...

Self-Biased Differential Rectifier with Enhanced Dynamic Range for Wireless Powering

KAUST Repository

Ouda, Mahmoud H.; Khalil, Waleed; Salama, Khaled N.

2016-01-01

A self-biased, cross-coupled, differential rectifier is proposed with enhanced power-conversion efficiency over an extended range of input power. A prototype is designed for UHF 433MHz RF power-harvesting applications and is implemented using 0.18μm

28.3THz bowtie antenna integrated rectifier for infrared energy harvesting

KAUST Repository

Gadalla, Mena N.; Shamim, Atif

2014-01-01

The design, fabrication and characterization of an asymmetric 28.3 THz antenna integrated rectifier (rectenna) using Au/Al2O3/Pt is presented. The rectenna design comprises a sharp tip bowtie antenna and a tunneling Metal-insulator-Metal (MIM) diode

Accurate control of oxygen level in cells during culture on silicone rubber membranes with application to stem cell differentiation.

Science.gov (United States)

Powers, Daryl E; Millman, Jeffrey R; Bonner-Weir, Susan; Rappel, Michael J; Colton, Clark K

2010-01-01

Oxygen level in mammalian cell culture is often controlled by placing culture vessels in humidified incubators with a defined gas phase partial pressure of oxygen (pO(2gas)). Because the cells are consuming oxygen supplied by diffusion, a difference between pO(2gas) and that experienced by the cells (pO(2cell)) arises, which is maximal when cells are cultured in vessels with little or no oxygen permeability. Here, we demonstrate theoretically that highly oxygen-permeable silicone rubber membranes can be used to control pO(2cell) during culture of cells in monolayers and aggregates much more accurately and can achieve more rapid transient response following a disturbance than on polystyrene and fluorinated ethylene-propylene copolymer membranes. Cell attachment on silicone rubber was achieved by physical adsorption of fibronectin or Matrigel. We use these membranes for the differentiation of mouse embryonic stem cells to cardiomyocytes and compare the results with culture on polystyrene or on silicone rubber on top of polystyrene. The fraction of cells that are cardiomyocyte-like increases with decreasing pO(2) only when using oxygen-permeable silicone membrane-based dishs, which contract on silicone rubber but not polystyrene. The high permeability of silicone rubber results in pO(2cell) being equal to pO(2gas) at the tissue-membrane interface. This, together with geometric information from histological sections, facilitates development of a model from which the pO(2) distribution within the resulting aggregates is computed. Silicone rubber membranes have significant advantages over polystyrene in controlling pO(2cell), and these results suggest they are a valuable tool for investigating pO(2) effects in many applications, such as stem cell differentiation. Copyright 2009 American Institute of Chemical Engineers

Spatial control of direct chemical vapor deposition of graphene on silicon dioxide by directional copper dewetting

NARCIS (Netherlands)

van den Beld, Wesley Theodorus Eduardus; van den Berg, Albert; Eijkel, Jan C.T.

2016-01-01

In this paper we present a method for the spatial control of direct graphene synthesis onto silicon dioxide by controlled dewetting. The dewetting process is controlled through a combination of using a grooved substrate and conducting copper deposition at an angle. The substrate is then treated

Gold nanoparticle growth control - Implementing novel wet chemistry method on silicon substrate

KAUST Repository

Al-Ameer, Ammar

2013-04-01

Controlling particle size, shape, nucleation, and self-assembly on surfaces are some of the main challenges facing electronic device fabrication. In this work, growth of gold nanoparticles over a wide range of sizes was investigated by using a novel wet chemical method, where potassium iodide is used as the reducing solution and gold chloride as the metal precursor, on silicon substrates. Four parameters were studied: soaking time, solution temperature, concentration of the solution of gold chloride, and surface pre-treatment of the substrate. Synthesized nanoparticles were then characterized using scanning electron microscopy (SEM). The precise control of the location and order of the grown gold overlayer was achieved by using focused ion beam (FIB) patterning of a silicon surface, pre-treated with potassium iodide. By varying the soaking time and temperature, different particle sizes and shapes were obtained. Flat geometrical shapes and spherical shapes were observed. We believe, that the method described in this work is potentially a straightforward and efficient way to fabricate gold contacts for microelectronics. © 2013 IEEE.

LabVIEW-based control and acquisition system for the dosimetric characterization of a silicon strip detector.

Science.gov (United States)

Ovejero, M C; Pérez Vega-Leal, A; Gallardo, M I; Espino, J M; Selva, A; Cortés-Giraldo, M A; Arráns, R

2017-02-01

The aim of this work is to present a new data acquisition, control, and analysis software system written in LabVIEW. This system has been designed to obtain the dosimetry of a silicon strip detector in polyethylene. It allows the full automation of the experiments and data analysis required for the dosimetric characterization of silicon detectors. It becomes a useful tool that can be applied in the daily routine check of a beam accelerator.

Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertz pulses

Science.gov (United States)

Lisauskas, Alvydas; Ikamas, Kestutis; Massabeau, Sylvain; Bauer, Maris; ČibiraitÄ--, DovilÄ--; Matukas, Jonas; Mangeney, Juliette; Mittendorff, Martin; Winnerl, Stephan; Krozer, Viktor; Roskos, Hartmut G.

2018-05-01

We propose to exploit rectification in field-effect transistors as an electrically controllable higher-order nonlinear phenomenon for the convenient monitoring of the temporal characteristics of THz pulses, for example, by autocorrelation measurements. This option arises because of the existence of a gate-bias-controlled super-linear response at sub-threshold operation conditions when the devices are subjected to THz radiation. We present measurements for different antenna-coupled transistor-based THz detectors (TeraFETs) employing (i) AlGaN/GaN high-electron-mobility and (ii) silicon CMOS field-effect transistors and show that the super-linear behavior in the sub-threshold bias regime is a universal phenomenon to be expected if the amplitude of the high-frequency voltage oscillations exceeds the thermal voltage. The effect is also employed as a tool for the direct determination of the speed of the intrinsic TeraFET response which allows us to avoid limitations set by the read-out circuitry. In particular, we show that the build-up time of the intrinsic rectification signal of a patch-antenna-coupled CMOS detector changes from 20 ps in the deep sub-threshold voltage regime to below 12 ps in the vicinity of the threshold voltage.

Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

Institute of Scientific and Technical Information of China (English)

LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

2004-01-01

The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

Microcrystalline silicon deposition: Process stability and process control

International Nuclear Information System (INIS)

Donker, M.N. van den; Kilper, T.; Grunsky, D.; Rech, B.; Houben, L.; Kessels, W.M.M.; Sanden, M.C.M. van de

2007-01-01

Applying in situ process diagnostics, we identified several process drifts occurring in the parallel plate plasma deposition of microcrystalline silicon (μc-Si:H). These process drifts are powder formation (visible from diminishing dc-bias and changing spatial emission profile on a time scale of 10 0 s), transient SiH 4 depletion (visible from a decreasing SiH emission intensity on a time scale of 10 2 s), plasma heating (visible from an increasing substrate temperature on a time scale of 10 3 s) and a still puzzling long-term drift (visible from a decreasing SiH emission intensity on a time scale of 10 4 s). The effect of these drifts on the crystalline volume fraction in the deposited films is investigated by selected area electron diffraction and depth-profiled Raman spectroscopy. An example shows how the transient depletion and long-term drift can be prevented by suitable process control. Solar cells deposited using this process control show enhanced performance. Options for process control of plasma heating and powder formation are discussed

Design of the LC+trap filter for a current source rectifier

DEFF Research Database (Denmark)

Min, Huang; Wang, Xiongfei; Loh, Poh Chiang

2015-01-01

This paper investigates an LC + trap filter for current source converters to improve the switching harmonic attenuation. The resonant frequency characteristics of the filter of current source rectifier are analyzed. A filter design procedure is proposed based on the input power factor, filter...

Structurally controlled deposition of silicon onto nanowires

Science.gov (United States)

Wang, Weijie; Liu, Zuqin; Han, Song; Bornstein, Jonathan; Stefan, Constantin Ionel

2018-03-20

Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon coating is provided. The silicon coating may include a non-conformal, more porous layer and a conformal, denser layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes, e.g., a PECVD layer to deposit the non-conformal layer and a thermal CVD process to deposit the conformal layer, are used. Anodes including the nanostructures have longer cycle lifetimes than anodes made using either a PECVD or thermal CVD method alone.

Development of 24GHz Rectenna for Receiving and Rectifying Modulated Waves

International Nuclear Information System (INIS)

Shinohara, Naoki; Hatano, Ken

2014-01-01

In this paper, we show experimental results of RF-DC conversion with modulated 24GHz waves. We have already developed class-F MMIC rectenna with resonators for higher harmonics at no modulated 24GHz microwave for RF energy transfer. Dimensions of the MMIC rectifying circuit is 1 mm × 3 mm on GaAs. Maximum RF-DC conversion efficiency is measured 47.9% for a 210 mW microwave input of 24 GHz with a 120 Ω load. The class-F rectenna is based on a single shunt full-wave rectifier. For future application of a simultaneous energy and information transfer system or an energy harvesting from broadcasting waves, input microwave will be modulated. In this paper, we show an experimental result of RF-DC conversion of the class-F rectenna with 24GHz waves modulated by 16QAM as 1st modulation and OFDM as 2nd modulation

Development of 24GHz Rectenna for Receiving and Rectifying Modulated Waves

Science.gov (United States)

Shinohara, Naoki; Hatano, Ken

2014-11-01

In this paper, we show experimental results of RF-DC conversion with modulated 24GHz waves. We have already developed class-F MMIC rectenna with resonators for higher harmonics at no modulated 24GHz microwave for RF energy transfer. Dimensions of the MMIC rectifying circuit is 1 mm × 3 mm on GaAs. Maximum RF-DC conversion efficiency is measured 47.9% for a 210 mW microwave input of 24 GHz with a 120 Ω load. The class-F rectenna is based on a single shunt full-wave rectifier. For future application of a simultaneous energy and information transfer system or an energy harvesting from broadcasting waves, input microwave will be modulated. In this paper, we show an experimental result of RF-DC conversion of the class-F rectenna with 24GHz waves modulated by 16QAM as 1st modulation and OFDM as 2nd modulation.

2012 NOAA Ortho-rectified Color MLLW Mosaic of Alabama: Eastern Mississippi Sound

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2010 NOAA Ortho-rectified Near-infrared Mosaic of Port Arthur - Beaumont, Texas

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2010 NOAA Ortho-rectified Mosaic from Color Aerial Imagery of CHOCTAWHATCHEE BAY

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative of CHOCTAWHATCHEE BAY....

2013 NOAA Ortho-rectified Color Mosaic of California: Port of San Diego

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2011 NOAA Ortho-rectified Mosaic of Intracoastal Waterway, Texas (NODC Accession 0105604)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2009 NOAA Ortho-rectified RGB Mosaic of Savannah, Georgia (NODC Accession 0092435)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2017 NOAA NGS Ortho-rectified Color Mosaic of Houston Ship Channel, Texas

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2011 NOAA Ortho-rectified Mosaic of Intracoastal City, Louisiana (NODC Accession 0075831)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2010 NOAA Ortho-rectified Mosaic of Savannah River, Georgia (NODC Accession 0092435)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2011 NOAA Ortho-rectified Mosaic of Tallaboa, Puerto Rico (NODC Accession 0074381)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2016 NOAA NGS Ortho-rectified Color Mosaic of Kenai and Nikiski, Alaska

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National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2015 NOAA NGS Ortho-rectified Near-Infrared Mosaic of Port Canaveral, Florida

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

Plasmas in saline solutions sustained using rectified ac voltages: polarity and frequency effects on the discharge behaviour

International Nuclear Information System (INIS)

Chang Hungwen; Hsu Chengche

2012-01-01

In this work, three major problems, namely severe electrode damage, poor plasma stability and excess power consumption, arising in ac-driven plasmas in saline solutions are solved using a rectified power source. Diagnostic studies on the effects of power source polarity and frequency on the plasma behaviour are performed. Examination of I-V characteristics and temporally resolved light emission shows that the polarity significantly influences the current amplitude when the plasma exists, while the frequency alters the bubble dynamics, which in turn affects the plasma ignition voltage. When the plasma is driven by a rectified ac power source, the electrode erosion is reduced substantially. With a low frequency, moderate applied voltage and positively rectified ac power source (e.g. 100 Hz and 350 V), a stable plasma is ignited in nearly every power cycle. (paper)

2010 NOAA Ortho-rectified Mosaic from Color Aerial Imagery of LAKE CHARLES

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National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative of LAKE CHARLES. The...

Fixture and method for rectifying damaged guide thimble insert sleeves in a reconstitutable fuel assembly

International Nuclear Information System (INIS)

Shallenberger, J.M.; Ferlan, S.J.

1987-01-01

A guide thimble damage-rectifying method is described for use on a reconstitutable fuel assembly being held in a work station with its top nozzle removed to expose a plurality of guide thimbles having one of several different types of damage. The method consists of: (a) providing a base having a plurality of tool positioning openings defined therein in a pattern matched with that of the guide thimbles of the fuel assembly; (b) mounting the base on the work station with its tool positioning openings in alignment with the guide thimbles of the fuel assembly and such that the base is movable toward the guide thimbles; (c) providing a plurality of different tools each operable to rectify one of the different types of guide thimble damage; (d) mounting selected ones of the different tools in respective ones of the openings of the base in alignment with ones of the thimbles having the respective types of guide thimble damage capable of being rectified by the selected tools such that upon movement of the base toward the guide thimbles the respective types of guide thimble damage will be rectified by the selected tools; (e) providing a group of positioning elements; (f) mounting the positioning elements in selected ones of the base openings corresponding to undamaged ones of the guide thimbles such that upon movement of the base toward the guide thimbles the positioning elements become mounted on upper end portions of the corresponding undamaged ones of the guide thimbles for precisely locating the fixture relative to the guide thimble upper end portions for accurate performance of the repairable damage rectifying operation by the tools as the base is moved toward the guide thimbles; and (g) moving the base toward the guide thimbles so as to mount the positioning elements on the corresponding ones of the undamaged guide thimbles and effect rectification of the damaged guide thimbles by the selected tools

Decreased inward rectifier potassium current IK1 in dystrophin-deficient ventricular cardiomyocytes.

Science.gov (United States)

Rubi, Lena; Koenig, Xaver; Kubista, Helmut; Todt, Hannes; Hilber, Karlheinz

2017-03-04

Kir2.x channels in ventricular cardiomyocytes (most prominently Kir2.1) account for the inward rectifier potassium current I K1 , which controls the resting membrane potential and the final phase of action potential repolarization. Recently it was hypothesized that the dystrophin-associated protein complex (DAPC) is important in the regulation of Kir2.x channels. To test this hypothesis, we investigated potential I K1 abnormalities in dystrophin-deficient ventricular cardiomyocytes derived from the hearts of Duchenne muscular dystrophy mouse models. We found that I K1 was substantially diminished in dystrophin-deficient cardiomyocytes when compared to wild type myocytes. This finding represents the first functional evidence for a significant role of the DAPC in the regulation of Kir2.x channels.

Continuous, saturation, and discontinuous tokamak plasma vertical position control systems

Energy Technology Data Exchange (ETDEWEB)

Mitrishkin, Yuri V., E-mail: y_mitrishkin@hotmail.com [M. V. Lomonosov Moscow State University, Faculty of Physics, Moscow 119991 (Russian Federation); Pavlova, Evgeniia A., E-mail: janerigoler@mail.ru [M. V. Lomonosov Moscow State University, Faculty of Physics, Moscow 119991 (Russian Federation); Kuznetsov, Evgenii A., E-mail: ea.kuznetsov@mail.ru [Troitsk Institute for Innovation and Fusion Research, Moscow 142190 (Russian Federation); Gaydamaka, Kirill I., E-mail: k.gaydamaka@gmail.com [V. A. Trapeznikov Institute of Control Sciences of the Russian Academy of Sciences, Moscow 117997 (Russian Federation)

2016-10-15

Highlights: • Robust new linear state feedback control system for tokamak plasma vertical position. • Plasma vertical position relay control system with voltage inverter in sliding mode. • Design of full models of multiphase rectifier and voltage inverter. • First-order unit approximation of full multiphase rectifier model with high accuracy. • Wider range of unstable plant parameters of stable control system with multiphase rectifier. - Abstract: This paper is devoted to the design and comparison of unstable plasma vertical position control systems in the T-15 tokamak with the application of two types of actuators: a multiphase thyristor rectifier and a transistor voltage inverter. An unstable dynamic element obtained by the identification of plasma-physical DINA code was used as the plasma model. The simplest static feedback state space control law was synthesized as a linear combination of signals accessible to physical measurements, namely the plasma vertical displacement, the current, and the voltage in a horizontal field coil, to solve the pole placement problem for a closed-loop system. Only one system distinctive parameter was used to optimize the performance of the feedback system, viz., a multiple real pole. A first-order inertial unit was used as the rectifier model in the feedback. A system with a complete rectifier model was investigated as well. A system with the voltage inverter model and static linear controller was brought into a sliding mode. As this takes place, real time delays were taken into account in the discontinuous voltage inverter model. The comparison of the linear and sliding mode systems showed that the linear system enjoyed an essentially wider range of the plant model parameters where the feedback system was stable.

Continuous, saturation, and discontinuous tokamak plasma vertical position control systems

International Nuclear Information System (INIS)

Mitrishkin, Yuri V.; Pavlova, Evgeniia A.; Kuznetsov, Evgenii A.; Gaydamaka, Kirill I.

2016-01-01

Highlights: • Robust new linear state feedback control system for tokamak plasma vertical position. • Plasma vertical position relay control system with voltage inverter in sliding mode. • Design of full models of multiphase rectifier and voltage inverter. • First-order unit approximation of full multiphase rectifier model with high accuracy. • Wider range of unstable plant parameters of stable control system with multiphase rectifier. - Abstract: This paper is devoted to the design and comparison of unstable plasma vertical position control systems in the T-15 tokamak with the application of two types of actuators: a multiphase thyristor rectifier and a transistor voltage inverter. An unstable dynamic element obtained by the identification of plasma-physical DINA code was used as the plasma model. The simplest static feedback state space control law was synthesized as a linear combination of signals accessible to physical measurements, namely the plasma vertical displacement, the current, and the voltage in a horizontal field coil, to solve the pole placement problem for a closed-loop system. Only one system distinctive parameter was used to optimize the performance of the feedback system, viz., a multiple real pole. A first-order inertial unit was used as the rectifier model in the feedback. A system with a complete rectifier model was investigated as well. A system with the voltage inverter model and static linear controller was brought into a sliding mode. As this takes place, real time delays were taken into account in the discontinuous voltage inverter model. The comparison of the linear and sliding mode systems showed that the linear system enjoyed an essentially wider range of the plant model parameters where the feedback system was stable.

Development of a 50-60 Hz thermally switched superconducting rectifier

NARCIS (Netherlands)

Chevtchenko, O.A.; ten Kate, Herman H.J.; Krooshoop, Hendrikus J.G.; Markovsky, N.V.; Mulder, G.B.J.; Mulder, G.B.J.

1993-01-01

A full-wave thermally switched superconducting rectifier, able to operate directly from the mains at the 50-60-Hz frequency, has been developed. Typical design output values of this device are a current of 300 A, a voltage of up to 1 V, an average power of up to 100 VA, and an efficiency better than

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

Directory of Open Access Journals (Sweden)

Vinay Kabra

2014-11-01

Full Text Available A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current–voltage (I–V and capacitance–voltage (C–V measurements. The effect of UV illumination on the I–V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.

Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

KAUST Repository

Wu, Xing

2018-04-14

Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n++ Si as the bottom electrode with Ni‐electrode/HfOx/SiO2 asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfOx/SiO2 junction and n++ Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories.

Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

KAUST Repository

Wu, Xing; Yu, Kaihao; Cha, Dong Kyu; Bosman, Michel; Raghavan, Nagarajan; Zhang, Xixiang; Li, Kun; Liu, Qi; Sun, Litao; Pey, Kinleong

2018-01-01

Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n++ Si as the bottom electrode with Ni‐electrode/HfOx/SiO2 asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfOx/SiO2 junction and n++ Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories.

The silicon sensor for the compact muon solenoid tracker. Control of the fabrication process

International Nuclear Information System (INIS)

Manolescu, Florentina; Mihul, Alexandru; Macchiolo, Anna

2005-01-01

The Compact Muon Solenoid (CMS) is one of the experiments at the Large Hadron Collider (LHC) under construction at CERN. The inner tracking system of this experiment consists of the world largest Silicon Strip Tracker (SST). In total, 24,244 silicon sensors are implemented covering an area of 206 m 2 . To construct this large system and to ensure its functionality for the full lifetime of ten years under the hard LHC condition, a detailed quality assurance program has been developed. This paper describes the strategy of the Process Qualification Control to monitor the stability of the fabrication process throughout the production phase and the results obtained are shown. (authors)

Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

DEFF Research Database (Denmark)

Sun, Jie; Lindvall, Niclas; Cole, Matthew T.

2012-01-01

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes...

2014 NOAA Ortho-rectified Mosaic of Delaware Coastline: Hurricane Sandy Impact Area

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles at 0.10m GSD. This data set was created for NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative in the...

A vector modulated three-phase four-quadrant rectifier - Application to a dc motor drive

Energy Technology Data Exchange (ETDEWEB)

Jussila, Matti; Salo, Mika; Kaehkoenen, Lauri; Tuusa, Heikki

2004-07-01

This paper introduces a theory for a space vector modulation of a three-phase four-quadrant PWM rectifier (FQR). The presented vector modulation method is simple to realize with a microcontroller and it replaces the conventional modulation methods based on the analog technology. The FQR may be used to supply directly a dc load, e.g. a dc machine. The vector modulated FQR is tested in simulations supplying a 4.5 kW dc motor. The simulations show the benefits of the vector modulated FQR against thyristor converters: the supply currents are sinusoidal and the displacement power factor of the supply can be controlled. Furthermore the load current is smooth. (author)

An FPGA-based silicon neuronal network with selectable excitability silicon neurons

Directory of Open Access Journals (Sweden)

Jing eLi

2012-12-01

Full Text Available This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN and the transmitter release based silicon synapse, allow the network to show rich dynamic behaviors and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with $256$ full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs.

Silicon Micromachined Microlens Array for THz Antennas

Science.gov (United States)

Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

2013-01-01

5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Optical force rectifiers based on PT-symmetric metasurfaces

Science.gov (United States)

Alaee, Rasoul; Gurlek, Burak; Christensen, Johan; Kadic, Muamer

2018-05-01

We introduce here the concept of optical force rectifier based on parity-time symmetric metasurfaces. Directly linked to the properties of non-Hermitian systems engineered by balanced loss and gain constituents, we show that light can exert asymmetric pulling or pushing forces on metasurfaces depending on the direction of the impinging light. This generates a complete force rectification in the vicinity of the exceptional point. Our findings have the potential to spark the design of applications in optical manipulation where the forces, strictly speaking, act unidirectionally.

Comparison of stability of WSiX/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

International Nuclear Information System (INIS)

Kim, Jihyun; Ren, F.; Chung, G.Y.; MacMillan, M.F.; Baca, A.G.; Briggs, R.D.; Schoenfeld, D.; Pearton, S.J.

2004-01-01

SiC Schottky rectifiers with moderate breakdown voltages of ∼450 V and with either WSi X or Ni rectifying contacts were irradiated with Co-60 γ-rays to doses up to ∼315 Mrad. The Ni/SiC rectifiers show severe reaction of the contact after irradiation at the highest dose, badly degrading the forward current characteristics and increasing the on-state resistance by up to a factor of 6 after irradiation. By sharp contrast, the WSi X /SiC devices show little deterioration of the contact with the same conditions and changes in on-state resistance of X contacts appear promising for applications requiring improved contact stability

Silicon controlled rectifier polyphase bridge inverter commutated with gate-turn-off thyristor

Science.gov (United States)

Edwards, Dean B. (Inventor); Rippel, Wally E. (Inventor)

1986-01-01

A polyphase SCR inverter (10) having N switching poles, each comprised of two SCR switches (1A, 1B; 2A, 2B . . . NA, NB) and two diodes (D1B; D1B; D2A, D2B . . . DNA, DNB) in series opposition with saturable reactors (L1A, L1B; L2A, L2B . . . LNA, LNB) connecting the junctions between the SCR switches and diodes to an output terminal (1, 2 . . . 3) is commutated with only one GTO thyristor (16) connected between the common negative terminal of a dc source and a tap of a series inductor (14) connected to the positive terminal of the dc source. A clamp winding (22) and diode (24) are provided, as is a snubber (18) which may have its capacitance (c) sized for maximum load current divided into a plurality of capacitors (C.sub.1, C.sub.2 . . . C.sub.N), each in series with an SCR switch S.sub.1, S.sub.2 . . . S.sub.N). The total capacitance may be selected by activating selected switches as a function of load current. A resistor 28 and SCR switch 26 shunt reverse current when the load acts as a generator, such as a motor while braking.

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

Science.gov (United States)

Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

1987-01-01

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Controlling charge current through a DNA based molecular transistor

Energy Technology Data Exchange (ETDEWEB)

Behnia, S., E-mail: s.behnia@sci.uut.ac.ir; Fathizadeh, S.; Ziaei, J.

2017-01-05

Molecular electronics is complementary to silicon-based electronics and may induce electronic functions which are difficult to obtain with conventional technology. We have considered a DNA based molecular transistor and study its transport properties. The appropriate DNA sequence as a central chain in molecular transistor and the functional interval for applied voltages is obtained. I–V characteristic diagram shows the rectifier behavior as well as the negative differential resistance phenomenon of DNA transistor. We have observed the nearly periodic behavior in the current flowing through DNA. It is reported that there is a critical gate voltage for each applied bias which above it, the electrical current is always positive. - Highlights: • Modeling a DNA based molecular transistor and studying its transport properties. • Choosing the appropriate DNA sequence using the quantum chaos tools. • Choosing the functional interval for voltages via the inverse participation ratio tool. • Detecting the rectifier and negative differential resistance behavior of DNA.

Boost Half-Bridge DC-DC Converter with Reconfigurable Rectifier for Ultra-Wide Input Voltage Range Applications

DEFF Research Database (Denmark)

Vinnikov, Dmitri; Chub, Andrii; Liivik, Elizaveta

2018-01-01

This paper introduces a novel galvanically isolated boost half-bridge dc-dc converter intended for modern power electronic applications where ultra-wide input voltage regulation range is needed. A reconfigurable output rectifier stage performs a transition between the voltage doubler and the full......-bridge diode rectifiers and, by this means, extends the regulation range significantly. The converter features a low number of components and resonant soft switching of semiconductors, which result in high power conversion efficiency over a wide input voltage and load range. The paper presents the operating...

Length dependence of rectification in organic co-oligomer spin rectifiers

International Nuclear Information System (INIS)

Hu Gui-Chao; Zhang Zhao; Li Ying; Ren Jun-Feng; Wang Chuan-Kui

2016-01-01

The rectification ratio of organic magnetic co-oligomer diodes is investigated theoretically by changing the molecular length. The results reveal two distinct length dependences of the rectification ratio: for a short molecular diode, the charge-current rectification changes little with the increase of molecular length, while the spin-current rectification is weakened sharply by the length; for a long molecular diode, both the charge-current and spin-current rectification ratios increase quickly with the length. The two kinds of dependence switch at a specific length accompanied with an inversion of the rectifying direction. The molecular ortibals and spin-resolved transmission analysis indicate that the dominant mechanism of rectification suffers a change at this specific length, that is, from asymmetric shift of molecular eigenlevels to asymmetric spatial localization of wave functions upon the reversal of bias. This work demonstrates a feasible way to control the rectification in organic co-oligomer spin diodes by adjusting the molecular length. (paper)

2012 NOAA Ortho-rectified Near-Infrared MLLW Mosaic of Alabama: Eastern Mississippi Sound

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2012 NOAA Ortho-rectified Color Mosaic of Sacramento Deep Water Ship Channel, California

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2009 NOAA Near-Infrared Ortho-rectified Mosaic of Brunswick, Georgia (NODC Accession 0092435)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2011 NOAA Ortho-rectified Mosaic of Texas: Integrated Ocean and Coastal Mapping Product

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2015 NOAA Ortho-rectified Color Mosaic of the port of Silver Bay, Minnesota

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2012 NOAA Ortho-rectified Near-Infrared Mosaic of Oregon: Lake Umatilla to Clarkson

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

Direct Production of Silicones From Sand

Energy Technology Data Exchange (ETDEWEB)

Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

2001-09-30

Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

UV/ozone assisted local graphene (p)/ZnO(n) heterojunctions as a nanodiode rectifier

Science.gov (United States)

Sahatiya, Parikshit; Badhulika, Sushmee

2016-07-01

Here we report the fabrication of a novel graphene/ZnO nanodiode by UV/ozone assisted oxidation of graphene and demonstrate its application as a half-wave rectifier to generate DC voltage. The method involves the use of electrospinning for one-step in situ synthesis and alignment of single Gr/ZnO nanocomposite across metal electrodes. On subsequent UV illumination, graphene oxidizes, which induces p type doping and ZnO being an n type semiconductor, thus resulting in the formation of a nanodiode. The as-fabricated device shows strong non-linear current-voltage characteristic similar to that of conventional semiconductor p-n junction diodes. Excellent rectifying behavior with a rectification ratio of ~103 was observed and the nanodiodes were found to exhibit long-term repeatability in their performance. Ideality factor and barrier height, as calculated by the thermionic emission model, were found to be 1.6 and 0.504 eV respectively. Due to the fact that diodes are the basic building blocks in the electronics and semiconductor industry, the successful fabrication of these nanodiodes based on UV assisted p type doping of graphene indicates that this approach can be used for developing highly scalable and efficient components for nanoelectronics, such as rectifiers and logic gates that find applications in numerous fields.

Rectifiability of Line Defects in Liquid Crystals with Variable Degree of Orientation

Science.gov (United States)

Alper, Onur

2018-04-01

In [2], H ardt, L in and the author proved that the defect set of minimizers of the modified Ericksen energy for nematic liquid crystals consists locally of a finite union of isolated points and Hölder continuous curves with finitely many crossings. In this article, we show that each Hölder continuous curve in the defect set is of finite length. Hence, locally, the defect set is rectifiable. For the most part, the proof closely follows the work of D e L ellis et al. (Rectifiability and upper minkowski bounds for singularities of harmonic q-valued maps, arXiv:1612.01813, 2016) on harmonic Q-valued maps. The blow-up analysis in A lper et al. (Calc Var Partial Differ Equ 56(5):128, 2017) allows us to simplify the covering arguments in [11] and locally estimate the length of line defects in a geometric fashion.

Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

Directory of Open Access Journals (Sweden)

Eugenijus SHATKOVSKIS

2012-09-01

Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

Silicon-micromachined microchannel plates

CERN Document Server

Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

2000-01-01

Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control

Energy Technology Data Exchange (ETDEWEB)

Ranjan, Alok, E-mail: alok.ranjan@us.tel.com; Wang, Mingmei; Sherpa, Sonam D.; Rastogi, Vinayak [TEL Technology Center, America LLC, 255 Fuller Road, Suite 214, Albany, New York 12203 (United States); Koshiishi, Akira [Tokyo Electron Miyagi, Ltd., 1 Techno-Hills, Taiwa-cho, Kurokawa-gun, Miyagi, 9813629 (Japan); Ventzek, Peter L. G. [Tokyo Electron America, Inc., 2400 Grove Blvd., Austin, Texas 78741 (United States)

2016-05-15

Atomic or layer by layer etching of silicon exploits temporally segregated self-limiting adsorption and material removal steps to mitigate the problems associated with continuous or quasicontinuous (pulsed) plasma processes: selectivity loss, damage, and profile control. Successful implementation of atomic layer etching requires careful choice of the plasma parameters for adsorption and desorption steps. This paper illustrates how process parameters can be arrived at through basic scaling exercises, modeling and simulation, and fundamental experimental tests of their predictions. Using chlorine and argon plasma in a radial line slot antenna plasma source as a platform, the authors illustrate how cycle time, ion energy, and radical to ion ratio can be manipulated to manage the deviation from ideality when cycle times are shortened or purges are incomplete. Cell based Monte Carlo feature scale modeling is used to illustrate profile outcomes. Experimental results of atomic layer etching processes are illustrated on silicon line and space structures such that iso-dense bias and aspect ratio dependent free profiles are produced. Experimental results also illustrate the profile control margin as processes move from atomic layer to multilayer by layer etching. The consequence of not controlling contamination (e.g., oxygen) is shown to result in deposition and roughness generation.

Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit.

Science.gov (United States)

Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V

2014-05-01

We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.

Bias-assisted KOH etching of macroporous silicon membranes

International Nuclear Information System (INIS)

Mathwig, K; Geilhufe, M; Müller, F; Gösele, U

2011-01-01

This paper presents an improved technique to fabricate porous membranes from macroporous silicon as a starting material. A crucial step in the fabrication process is the dissolution of silicon from the backside of the porous wafer by aqueous potassium hydroxide to open up the pores. We improved this step by biasing the silicon wafer electrically against the KOH. By monitoring the current–time characteristics a good control of the process is achieved and the yield is improved. Also, the etching can be stopped instantaneously and automatically by short-circuiting Si and KOH. Moreover, the bias-assisted etching allows for the controlled fabrication of silicon dioxide tube arrays when the silicon pore walls are oxidized and inverted pores are released.

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

Directory of Open Access Journals (Sweden)

V. А. Pilipenko

2017-01-01

Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

Intermediate Bandgap Solar Cells From Nanostructured Silicon

Energy Technology Data Exchange (ETDEWEB)

Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

2014-10-30

This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

All-electric control of donor nuclear spin qubits in silicon

Science.gov (United States)

Sigillito, Anthony J.; Tyryshkin, Alexei M.; Schenkel, Thomas; Houck, Andrew A.; Lyon, Stephen A.

2017-10-01

The electronic and nuclear spin degrees of freedom of donor impurities in silicon form ultra-coherent two-level systems that are potentially useful for applications in quantum information and are intrinsically compatible with industrial semiconductor processing. However, because of their smaller gyromagnetic ratios, nuclear spins are more difficult to manipulate than electron spins and are often considered too slow for quantum information processing. Moreover, although alternating current magnetic fields are the most natural choice to drive spin transitions and implement quantum gates, they are difficult to confine spatially to the level of a single donor, thus requiring alternative approaches. In recent years, schemes for all-electrical control of donor spin qubits have been proposed but no experimental demonstrations have been reported yet. Here, we demonstrate a scalable all-electric method for controlling neutral 31P and 75As donor nuclear spins in silicon. Using coplanar photonic bandgap resonators, we drive Rabi oscillations on nuclear spins exclusively using electric fields by employing the donor-bound electron as a quantum transducer, much in the spirit of recent works with single-molecule magnets. The electric field confinement leads to major advantages such as low power requirements, higher qubit densities and faster gate times. Additionally, this approach makes it possible to drive nuclear spin qubits either at their resonance frequency or at its first subharmonic, thus reducing device bandwidth requirements. Double quantum transitions can be driven as well, providing easy access to the full computational manifold of our system and making it convenient to implement nuclear spin-based qudits using 75As donors.

Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers

National Research Council Canada - National Science Library

Neudeck, Philip

1998-01-01

...-suited SiC polytype for power device implementation. This paper reports the first experimental measurements of stable positive temperature coefficient behavior observed in 4H-SiC pn junction rectifiers...

Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage

NARCIS (Netherlands)

Asadi, Kamal; Li, Mengyuan; Stingelin, Natalie; Blom, Paul W. M.; de Leeuw, Dago M.

2010-01-01

Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts

Process control of high rate microcrystalline silicon based solar cell deposition by optical emission spectroscopy

International Nuclear Information System (INIS)

Kilper, T.; Donker, M.N. van den; Carius, R.; Rech, B.; Braeuer, G.; Repmann, T.

2008-01-01

Silicon thin-film solar cells based on microcrystalline silicon (μc-Si:H) were prepared in a 30 x 30 cm 2 plasma-enhanced chemical vapor deposition reactor using 13.56 or 40.68 MHz plasma excitation frequency. Plasma emission was recorded by optical emission spectroscopy during μc-Si:H absorber layer deposition at deposition rates between 0.5 and 2.5 nm/s. The time course of SiH * and H β emission indicated strong drifts in the process conditions particularly at low total gas flows. By actively controlling the SiH 4 gas flow, the observed process drifts were successfully suppressed resulting in a more homogeneous i-layer crystallinity along the growth direction. In a deposition regime with efficient usage of the process gas, the μc-Si:H solar cell efficiency was enhanced from 7.9 % up to 8.8 % by applying process control

Silicon-micromachined microchannel plates

International Nuclear Information System (INIS)

Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

2000-01-01

Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

A High Power Density Single-Phase PWM Rectifier With Active Ripple Energy Storage

Energy Technology Data Exchange (ETDEWEB)

Wang, Ruxi [Virginia Polytechnic Institute and State University (Virginia Tech); Wang, Fei [ORNL; Boroyevich, Dushan [Virginia Polytechnic Institute and State University (Virginia Tech); Burgos, Rolando [ABB; Lai, Rixin [General Electric; Ning, Puqi [ORNL; Rajashekara, Kaushik [Rolls Royce

2011-01-01

It is well known that single-phase pulse width modulation rectifiers have second-order harmonic currents and corresponding ripple voltages on the dc bus. The low-frequency harmonic current is normally filtered using a bulk capacitor in the bus, which results in low power density. However, pursuing high power density in converter design is a very important goal in the aerospace applications. This paper studies methods for reducing the energy storage capacitor for single-phase rectifiers. The minimum ripple energy storage requirement is derived independently of a specific topology. Based on theminimum ripple energy requirement, the feasibility of the active capacitor s reduction schemes is verified. Then, we propose a bidirectional buck boost converter as the ripple energy storage circuit, which can effectively reduce the energy storage capacitance. The analysis and design are validated by simulation and experimental results.

Current Mode Full-Wave Rectifier Based on a Single MZC-CDTA

Directory of Open Access Journals (Sweden)

Neeta Pandey

2013-01-01

Full Text Available This paper presents a current mode full-wave rectifier based on single modified Z copy current difference transconductance amplifier (MZC-CDTA and two switches. The circuit is simple and is suitable for IC implementation. The functionality of the circuit is verified with SPICE simulation using 0.35 μm TSMC CMOS technology parameters.

Development of a thermally switched superconducting rectifier for 100 kA

NARCIS (Netherlands)

Mulder, G.B.J.; Mulder, G.B.J.; ten Kate, Herman H.J.; Krooshoop, Hendrikus J.G.; van de Klundert, L.J.M.; van de Klundert, L.J.M.

1991-01-01

A full-wave superconducting rectifier for 100 kA has been developed. Typical design values of this device are: a secondary current of 100 kA, a primary amplitude of 20 A, an operating frequency of 0.5 Hz, and an average power on the order of 100 W. The rectification is achieved by means of thermally

Formation of iron disilicide on amorphous silicon

Science.gov (United States)

Erlesand, U.; Östling, M.; Bodén, K.

1991-11-01

Thin films of iron disilicide, β-FeSi 2 were formed on both amorphous silicon and on crystalline silicon. The β-phase is reported to be semiconducting with a direct band-gap of about 0.85-0.89 eV. This phase is known to form via a nucleation-controlled growth process on crystalline silicon and as a consequence a rather rough silicon/silicide interface is usually formed. In order to improve the interface a bilayer structure of amorphous silicon and iron was sequentially deposited on Czochralski silicon in an e-gun evaporation system. Secondary ion mass spectrometry profiling (SIMS) and scanning electron micrographs revealed an improvement of the interface sharpness. Rutherford backscattering spectrometry (RBS) and X-ray diffractiometry showed β-FeSi 2 formation already at 525°C. It was also observed that the silicide growth was diffusion-controlled, similar to what has been reported for example in the formation of NiSi 2 for the reaction of nickel on amorphous silicon. The kinetics of the FeSi 2 formation in the temperature range 525-625°C was studied by RBS and the activation energy was found to be 1.5 ± 0.1 eV.

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

Science.gov (United States)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

COST-BENEFIT ANALYSIS OF BIOCONVERSION NEUFCHATEL WHEY INTO RECTIFIED ETHANOL AND ORGANIC LIQUID FERTILIZER IN SEMI PILOT SCALE

Directory of Open Access Journals (Sweden)

Gemilang Lara UTAMA

2015-10-01

Full Text Available Aims of the study was to determine the cost-benefit analysis in neufchatel whey bioconversion into rectified ethanol and organic liquid fertilizer. Bioconversion whey into rectified ethanol and organic liquid fertilizer has shown great potential as a way to reduce the pollution resulting from cheese-making process. Semi pilot scale experiment was done to ferment 5 L neufchatel whey using 5% K. lactis at 33°C for 24 h in semi anaerobic plastic container without agitation and then distilled into 96.2% purity. Data collected and analyzed descriptively related to benefit cost ratio/BCR, net present value/NPV and internal rate returns/IRR. The result showed that semi pilot scale bioconversion of neufchatel whey resulting in 106.42 ml rectified ethanol and 4404.22 ml distillery residue. Economic benefit could achieved by the support of distillery residue sales as organic liquid fertilizer.

Monochromator for synchrotron light with temperature controlled by electrical current on silicon crystal

Energy Technology Data Exchange (ETDEWEB)

Cusatis, Cesar; Souza, Paulo E.N. [Universidade Federal do Parana (LORXI/UFPR), Curitiba, PR (Brazil). Dept. de Fisica. Lab. de Optica de Raios X e Instrumentacao; Franco, Margareth Kobayaski; Kakuno, Edson [Laboratorio Nacional de Luz Sincroton (LNLS), Campinas, SP (Brazil); Gobbi, Angelo; Carvalho Junior, Wilson de [Centro de Pesquisa e Desenvolvimento em Telecomunicacoes (CPqD), Campinas, SP (Brazil)

2011-07-01

Full text. doped silicon crystal was used simultaneously as a monochromator, sensor and actuator in such way that its temperature could be controlled. Ohmic contacts allowed resistance measurements on a perfect silicon crystal, which were correlated to its temperature. Using the ohmic contacts, an electrical current caused Joule heating on the monochromator that was used to control its temperature. A simple stand-alone electronic box controlled the system. The device was built and tested with white beam synchrotron light on the double crystal monochromator of the XRD line of LNLS, Laboratorio Nacional de Luz Sincrotron, Campinas. The first crystal of a double crystal monochromator determines the energy that is delivered to a synchrotron experimental station and its temperature instability is a major source of energy and intensity instability. If the (333) silicon monochromator is at theta Bragg near 45 degree the variation of the diffraction angle is around one second of arc per degree Kelvin. It may take several minutes for the first crystal temperature to stabilize at the beginning of the station operation when the crystal and its environment are cold. With water refrigeration, the average overall temperature of the crystal may be constant, but the temperature of the surface changes with and without the white beam. The time used to wait for stabilization of the beam energy/intensity is lost unless the temperature of the crystal surface is kept constant. One solution for keeping the temperature of the monochromator and its environment constant or nearly constant is Joule heating it with a controlled small electrical current flowing on the surface of a doped perfect crystal. When the white beam is on, this small amount of extra power will be more concentrated at the beam footpath because the resistance is lower in this region due to the higher temperature. In addition, if the crystal itself is used to detect the temperature variation by measuring the electrical

Colloidal characterization of silicon nitride and silicon carbide

Science.gov (United States)

Feke, Donald L.

1986-01-01

The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

Contribution of delayed rectifier potassium currents to the electrical activity of murine colonic smooth muscle

Science.gov (United States)

Koh, S D; Ward, S M; Dick, G M; Epperson, A; Bonner, H P; Sanders, K M; Horowitz, B; Kenyon, J L

1999-01-01

We used intracellular microelectrodes to record the membrane potential (Vm) of intact murine colonic smooth muscle. Electrical activity consisted of spike complexes separated by quiescent periods (Vm≈−60 mV). The spike complexes consisted of about a dozen action potentials of approximately 30 mV amplitude. Tetraethylammonium (TEA, 1–10 mM) had little effect on the quiescent periods but increased the amplitude of the action potential spikes. 4-Aminopyridine (4-AP, ⋧ 5 mM) caused continuous spiking.Voltage clamp of isolated myocytes identified delayed rectifier K+ currents that activated rapidly (time to half-maximum current, 11.5 ms at 0 mV) and inactivated in two phases (τf = 96 ms, τs = 1.5 s at 0 mV). The half-activation voltage of the permeability was −27 mV, with significant activation at −50 mV.TEA (10 mM) reduced the outward current at potentials positive to 0 mV. 4-AP (5 mM) reduced the early current but increased outward current at later times (100–500 ms) consistent with block of resting channels relieved by depolarization. 4-AP inhibited outward current at potentials negative to −20 mV, potentials where TEA had no effect.Qualitative PCR amplification of mRNA identified transcripts encoding delayed rectifier K+ channel subunits Kv1.6, Kv4.1, Kv4.2, Kv4.3 and the Kvβ1.1 subunit in murine colon myocytes. mRNA encoding Kv 1.4 was not detected.We find that TEA-sensitive delayed rectifier currents are important determinants of action potential amplitude but not rhythmicity. Delayed rectifier currents sensitive to 4-AP are important determinants of rhythmicity but not action potential amplitude. PMID:10050014

‘Sleepy’ inward rectifier channels in guinea-pig cardiomyocytes are activated only during strong hyperpolarization

Science.gov (United States)

Liu, Gong Xin; Daut, Jürgen

2002-01-01

K+ channels of isolated guinea-pig cardiomyocytes were studied using the patch-clamp technique. At transmembrane potentials between −120 and −220 mV we observed inward currents through an apparently novel channel. The novel channel was strongly rectifying, no outward currents could be recorded. Between −200 and −160 mV it had a slope conductance of 42.8 ± 3.0 pS (s.d.; n = 96). The open probability (Po) showed a sigmoid voltage dependence and reached a maximum of 0.93 at −200 mV, half-maximal activation was approximately −150 mV. The voltage dependence of Po was not affected by application of 50 μm isoproterenol. The open-time distribution could be described by a single exponential function, the mean open time ranged between 73.5 ms at −220 mV and 1.4 ms at −160 mV. At least two exponential components were required to fit the closed time distribution. Experiments with different external Na+, K+ and Cl− concentrations suggested that the novel channel is K+ selective. Extracellular Ba2+ ions gave rise to a voltage-dependent reduction in Po by inducing long closed states; Cs+ markedly reduced mean open time at −200 mV. In cell-attached recordings the novel channel frequently converted to a classical inward rectifier channel, and vice versa. This conversion was not voltage dependent. After excision of the patch, the novel channel always converted to a classical inward rectifier channel within 0–3 min. This conversion was not affected by intracellular Mg2+, phosphatidylinositol (4,5)-bisphosphate or spermine. Taken together, our findings suggest that the novel K+ channel represents a different ‘mode’ of the classical inward rectifier channel in which opening occurs only at very negative potentials. PMID:11897847

Power Factor Correction Capacitors for Multiple Parallel Three-Phase ASD Systems

DEFF Research Database (Denmark)

Yang, Yongheng; Blaabjerg, Frede

2017-01-01

Today’s three-phase Adjustable Speed Drive (ASD) systems still employ Diode Rectifiers (DRs) and Silicon-Controlled Rectifiers (SCRs) as the front-end converters due to structural and control simplicity, small volume, low cost, and high reliability. However, the uncontrollable DRs and phase......-controllable SCRs bring side-effects by injecting high harmonics to the grid, which will degrade the system performance in terms of lowering the overall efficiency and overheating the system if remain uncontrolled or unattenuated. For multiple ASD systems, certain harmonics in the entire system can be mitigated...... the power factor, passive capacitors can be installed, which yet can trigger the system resonance. Hence, this paper analyzes the resonant issues in multiple ASD systems with power factor correction capacitors. Potential damping solutions are summarized. Simulations are carried out, while laboratory tests...

Core-shell heterojunction of silicon nanowire arrays and carbon quantum dots for photovoltaic devices and self-driven photodetectors.

Science.gov (United States)

Xie, Chao; Nie, Biao; Zeng, Longhui; Liang, Feng-Xia; Wang, Ming-Zheng; Luo, Linbao; Feng, Mei; Yu, Yongqiang; Wu, Chun-Yan; Wu, Yucheng; Yu, Shu-Hong

2014-04-22

Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.

Simplified High-Power Inverter

Science.gov (United States)

Edwards, D. B.; Rippel, W. E.

1984-01-01

Solid-state inverter simplified by use of single gate-turnoff device (GTO) to commutate multiple silicon controlled rectifiers (SCR's). By eliminating conventional commutation circuitry, GTO reduces cost, size and weight. GTO commutation applicable to inverters of greater than 1-kilowatt capacity. Applications include emergency power, load leveling, drives for traction and stationary polyphase motors, and photovoltaic-power conditioning.

Mitigating impact of thermal and rectified radio-frequency sheath potentials on edge localized modes

Energy Technology Data Exchange (ETDEWEB)

Gui, B. [Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Lawerence Livermore National Lab, Livermore, California 94550 (United States); Xu, X. Q. [Lawerence Livermore National Lab, Livermore, California 94550 (United States); Myra, J. R.; D' Ippolito, D. A. [Lodestar Research Corporation, Boulder, Colorado 80301 (United States)

2014-11-15

The mitigating impact of thermal and rectified radio frequency (RF) sheath potentials on the peeling-ballooning modes is studied non-linearly by employing a two-fluid three-field simulation model based on the BOUT++ framework. Additional shear flow and the Kelvin-Helmholtz effect due to the thermal and rectified RF sheath potential are induced. It is found that the shear flow increases the growth rate while the K-H effect decreases the growth rate slightly when there is a density gradient, but the energy loss of these cases is suppressed in the nonlinear phase. The stronger external electrostatic field due to the sheaths has a more significant effect on the energy loss suppression. From this study, it is found the growth rate in the linear phase mainly determines the onset of edge-localized modes, while the mode spectrum width in the nonlinear phase has an important impact on the turbulent transport. The wider mode spectrum leads to weaker turbulent transport and results in a smaller energy loss. Due to the thermal sheath and rectified RF sheath potential in the scrape-off-layer, the modified shear flow tears apart the peeling-ballooning filament and makes the mode spectrum wider, resulting in less energy loss. The perturbed electric potential and the parallel current near the sheath region is also suppressed locally due to the sheath boundary condition.

Size Control of Porous Silicon-Based Nanoparticles via Pore-Wall Thinning.

Science.gov (United States)

Secret, Emilie; Leonard, Camille; Kelly, Stefan J; Uhl, Amanda; Cozzan, Clayton; Andrew, Jennifer S

2016-02-02

Photoluminescent silicon nanocrystals are very attractive for biomedical and electronic applications. Here a new process is presented to synthesize photoluminescent silicon nanocrystals with diameters smaller than 6 nm from a porous silicon template. These nanoparticles are formed using a pore-wall thinning approach, where the as-etched porous silicon layer is partially oxidized to silica, which is dissolved by a hydrofluoric acid solution, decreasing the pore-wall thickness. This decrease in pore-wall thickness leads to a corresponding decrease in the size of the nanocrystals that make up the pore walls, resulting in the formation of smaller nanoparticles during sonication of the porous silicon. Particle diameters were measured using dynamic light scattering, and these values were compared with the nanocrystallite size within the pore wall as determined from X-ray diffraction. Additionally, an increase in the quantum confinement effect is observed for these particles through an increase in the photoluminescence intensity of the nanoparticles compared with the as-etched nanoparticles, without the need for a further activation step by oxidation after synthesis.

A pulsed load model and its impact on a synchronous-rectifier system

Science.gov (United States)

Hou, Pengfei; Xu, Ye; Li, Jianke; Wang, Jinquan; Zhang, Haitao; Yan, Jun; Wang, Chunming; Chen, Jingjing

2017-02-01

The pulsed load has become a developing trend of power loading. Unlike traditional loads, pulsed loads with current abrupt and repeated charges will result in unstable Microgrid operations because of their small capacity and inertia. In this paper, an Average Magnitude Sum Function (AMSF) is proposed to calculate the frequency of the grid, and based on AMSF, the Relative Deviation Rate (RDR) that characterises the impact of pulsed load on the AC side of the grid is defined and its calculation process is described in detail. In addition, the system dynamic characteristics under a pulsed load are analysed using an Insulated Gate Bipolar Transistor (IGBT) to control the on/off state of the resistive load for simulating a pulsed load. Finally, the transient characteristics of a synchronous-rectifier system with a pulsed load are studied and validated experimentally.

Photoperiod Modulates Fast Delayed Rectifier Potassium Currents in the Mammalian Circadian Clock.

Science.gov (United States)

Farajnia, Sahar; Meijer, Johanna H; Michel, Stephan

2016-10-01

One feature of the mammalian circadian clock, situated in the suprachiasmatic nucleus (SCN), is its ability to measure day length and thereby contribute to the seasonal adaptation of physiology and behavior. The timing signal from the SCN, namely the 24 hr pattern of electrical activity, is adjusted according to the photoperiod being broader in long days and narrower in short days. Vasoactive intestinal peptide and gamma-aminobutyric acid play a crucial role in intercellular communication within the SCN and contribute to the seasonal changes in phase distribution. However, little is known about the underlying ionic mechanisms of synchronization. The present study was aimed to identify cellular mechanisms involved in seasonal encoding by the SCN. Mice were adapted to long-day (light-dark 16:8) and short-day (light-dark 8:16) photoperiods and membrane properties as well as K + currents activity of SCN neurons were measured using patch-clamp recordings in acute slices. Remarkably, we found evidence for a photoperiodic effect on the fast delayed rectifier K + current, that is, the circadian modulation of this ion channel's activation reversed in long days resulting in 50% higher peak values during the night compared with the unaltered day values. Consistent with fast delayed rectifier enhancement, duration of action potentials during the night was shortened and afterhyperpolarization potentials increased in amplitude and duration. The slow delayed rectifier, transient K + currents, and membrane excitability were not affected by photoperiod. We conclude that photoperiod can change intrinsic ion channel properties of the SCN neurons, which may influence cellular communication and contribute to photoperiodic phase adjustment. © The Author(s) 2016.

Photoperiod Modulates Fast Delayed Rectifier Potassium Currents in the Mammalian Circadian Clock

Directory of Open Access Journals (Sweden)

Sahar Farajnia

2016-09-01

Full Text Available One feature of the mammalian circadian clock, situated in the suprachiasmatic nucleus (SCN, is its ability to measure day length and thereby contribute to the seasonal adaptation of physiology and behavior. The timing signal from the SCN, namely the 24 hr pattern of electrical activity, is adjusted according to the photoperiod being broader in long days and narrower in short days. Vasoactive intestinal peptide and gamma-aminobutyric acid play a crucial role in intercellular communication within the SCN and contribute to the seasonal changes in phase distribution. However, little is known about the underlying ionic mechanisms of synchronization. The present study was aimed to identify cellular mechanisms involved in seasonal encoding by the SCN. Mice were adapted to long-day (light–dark 16:8 and short-day (light–dark 8:16 photoperiods and membrane properties as well as K+ currents activity of SCN neurons were measured using patch-clamp recordings in acute slices. Remarkably, we found evidence for a photoperiodic effect on the fast delayed rectifier K+ current, that is, the circadian modulation of this ion channel’s activation reversed in long days resulting in 50% higher peak values during the night compared with the unaltered day values. Consistent with fast delayed rectifier enhancement, duration of action potentials during the night was shortened and afterhyperpolarization potentials increased in amplitude and duration. The slow delayed rectifier, transient K+ currents, and membrane excitability were not affected by photoperiod. We conclude that photoperiod can change intrinsic ion channel properties of the SCN neurons, which may influence cellular communication and contribute to photoperiodic phase adjustment.

Application of the chemical vapor-etching in polycrystalline silicon solar cells

International Nuclear Information System (INIS)

Ben Rabha, M.; Saadoun, M.; Boujmil, M.F.; Bessais, B.; Ezzaouia, H.; Bennaceur, R.

2005-01-01

This paper reports a study of the application of chemical vapor-etching (CVE) for the rear surface and in the emitter of polycrystalline silicon (pc-Si) solar cells. The CVE technique consists of exposing pc-Si wafers to a mixture of HF/HNO 3 . This technique is used to groove the rear surface of the pc-Si wafers for acid vapors rich in HNO 3 (HNO 3 /HF > 1/4), in order to realize rear-buried metallic contacts (RBMC) and the formation of a porous silicon (PS) layer on the frontal surface of the cell for volume ratio of HNO 3 /HF = 1/7. A significant increase of the spectral response in the long wavelength range was observed when a RBMC is formed. This increase was attributed to the reduction of the effective thickness of the base of the cells and grain boundary Al gettering. The achievement of a PS layer on the emitter of the pc-Si cells passivates the surface and reduces the reflectivity. The dark I-V characteristics of pc-Si cells with emitter-based PS show an important reduction of the reverse current together with an improvement of the rectifying behaviour. The I-V characteristic under AM1.5 illumination shows an enhancement of both short circuit current density and fill factor. The internal quantum efficiency is improved, particularly in the short wavelengths region

Phase-rectified signal averaging method to predict perinatal outcome in infants with very preterm fetal growth restriction- a secondary analysis of TRUFFLE-trial

NARCIS (Netherlands)

Lobmaier, Silvia M.; Mensing van Charante, Nico; Ferrazzi, Enrico; Giussani, Dino A.; Shaw, Caroline J.; Müller, Alexander; Ortiz, Javier U.; Ostermayer, Eva; Haller, Bernhard; Prefumo, Federico; Frusca, Tiziana; Hecher, Kurt; Arabin, Birgit; Thilaganathan, Baskaran; Papageorghiou, Aris T.; Bhide, Amarnath; Martinelli, Pasquale; Duvekot, Johannes J.; van Eyck, Jim; Visser, Gerard H A; Schmidt, Georg; Ganzevoort, Wessel; Lees, Christoph C.; Schneider, Karl T M; Bilardo, Caterina M.; Brezinka, Christoph; Diemert, Anke; Derks, Jan B.; Schlembach, Dietmar; Todros, Tullia; Valcamonico, Adriana; Marlow, Neil; van Wassenaer-Leemhuis, Aleid

2016-01-01

Background Phase-rectified signal averaging, an innovative signal processing technique, can be used to investigate quasi-periodic oscillations in noisy, nonstationary signals that are obtained from fetal heart rate. Phase-rectified signal averaging is currently the best method to predict survival

Phase-rectified signal averaging method to predict perinatal outcome in infants with very preterm fetal growth restriction- a secondary analysis of TRUFFLE-trial

NARCIS (Netherlands)

Lobmaier, Silvia M.; Mensing van Charante, Nico; Ferrazzi, Enrico; Giussani, Dino A.; Shaw, Caroline J.; Müller, Alexander; Ortiz, Javier U.; Ostermayer, Eva; Haller, Bernhard; Prefumo, Federico; Frusca, Tiziana; Hecher, Kurt; Arabin, Birgit; Thilaganathan, Baskaran; Papageorghiou, Aris T.; Bhide, Amarnath; Martinelli, Pasquale; Duvekot, Johannes J.; van Eyck, Jim; Visser, Gerard H. A.; Schmidt, Georg; Ganzevoort, Wessel; Lees, Christoph C.; Schneider, Karl T. M.; Bilardo, Caterina M.; Brezinka, Christoph; Diemert, Anke; Derks, Jan B.; Schlembach, Dietmar; Todros, Tullia; Valcamonico, Adriana; Marlow, Neil; van Wassenaer-Leemhuis, Aleid

2016-01-01

Phase-rectified signal averaging, an innovative signal processing technique, can be used to investigate quasi-periodic oscillations in noisy, nonstationary signals that are obtained from fetal heart rate. Phase-rectified signal averaging is currently the best method to predict survival after

A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

Energy Technology Data Exchange (ETDEWEB)

Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2015-08-03

We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET

Directory of Open Access Journals (Sweden)

Frederick Ojiemhende Ehiagwina

2016-09-01

Full Text Available Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si.  A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Rectifying effect of heterojunctions between metals and doped conducting polymer nanostructure pellets

Science.gov (United States)

Long, Yun-Ze; Yin, Zhi-Hua; Hui, Wen; Chen, Zhao-Jia; Wan, Mei-Xiang

2008-07-01

This paper reports that the Schottky junctions between low work function metals (e.g. Al and In) and doped semiconducting polymer pellets (e.g. polyaniline (PANI) microsphere pellet and polypyrrole (PPy) nanotube pellet) have been prepared and studied. Since Ag is a high work function metal which can make an ohmic contact with polymer, silver paste was used to fabricate the electrodes. The Al/PANI/Ag heterojunction shows an obvious rectifying effect as shown in I - V characteristic curves (rectifying ratio γ = 5 at ±6 V bias at room temperature). As compared to the Al/PANI/Ag, the heterojunction between In and PANI (In/PANI/Ag) exhibits a lower rectifying ratio γ = 1.6 at ±2 V bias at room temperature. In addition, rectifying effect was also observed in the heterojunctions Al/PPy/Ag (γ = 3.2 at ±1.6 V bias) and In/PPy/Ag (γ = 1.2 at ±3.0 V bias). The results were discussed in terms of thermoionic emission theory.

2012 NOAA Ortho-rectified Color MLLW Mosaic of Pescadero Point to Bodega Bay, California

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2012 NOAA Color Ortho-rectified Mosaic of Corpus Christi to Saint Charles Bay, Texas

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2010 NOAA Ortho-rectified Mosaic from Color Aerial Imagery of BEAUMONT, ORANGE, PORT AUTHUR

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative of BEAUMONT, ORANGE,...

2012 NOAA Ortho-rectified Color MLLW Mosaic of Bodega Bay to Shelter Cove, California

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2012 NOAA Color MLLW Ortho-rectified Mosaic of Amelia Island and Nassau River, Florida

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2011 NOAA Color MHW Ortho-rectified Mosaic of Amelia Island and Nassau River, Florida

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2012 NOAA Ortho-rectified Color MLLW Mosaic of Lopez Rock to Pescadero Point, California

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2013 NOAA Ortho-rectified Near-Infrared Mosaic of the Port of Panama City, Florida

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2015 NOAA Ortho-rectified Near-Infrared Mosaic of the port of Silver Bay, Minnesota

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2012 NOAA Ortho-rectified Color MLLW Mosaic of Seal Rock to Lopez Rock, California

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2011 NOAA Ortho-rectified Near-Infrared Mosaic of Isle of Shoals, New Hampshire (MHW)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2010 NOAA Ortho-rectified Mosaic of Louisiana: Mississippi River - Baton Rouge to Southwest Pass

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

Process for forming a porous silicon member in a crystalline silicon member

Science.gov (United States)

Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

1999-01-01

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

Connection of OWPPs to HVDC networks using VSCs and Diode Rectifiers: an Overview

DEFF Research Database (Denmark)

Saborío-Romano, Oscar; Bidadfar, Ali; Göksu, Ömer

This paper provides an overview of two technologies for connecting offshore wind power plants (offshore WPPs, OWPPs) to high-voltage direct current (HVDC) networks: voltage source converters (VSCs) and diode rectifiers (DRs). Current grid code requirements for the connection of such power plants...

Rectified motion in an asymmetrically structured channel due to induced-charge electrokinetic and thermo-kinetic phenomena

International Nuclear Information System (INIS)

Sugioka, Hideyuki

2016-01-01

It would be advantageous to move fluid by the gradient of random thermal noises that are omnipresent in the natural world. To achieve this motion, we propose a rectifier that uses a thermal noise along with induced-charge electroosmosis and electrophoresis (ICEO and ICEP) around a metal post cylinder in an asymmetrically structured channel and numerically examine its rectification performance. By the boundary element method combined with the thin double layer approximation, we find that rectified motion occurs in the asymmetrically structured channel due to ICEO and ICEP. Further, by thermodynamical and equivalent circuit methods, we discuss a thermal voltage that drives a rectifier consisting of a fluidic channel of an electrolyte and an impedance as a noise source. Our calculations show that fluid can be moved in the asymmetrically structured channel by the fluctuation of electric fields due to a thermal noise only when there is a temperature difference. In addition, our simple noise argument provides a different perspective for the thermo-kinetic phenomena (around a metal post) which was predicted based on the electrolyte Seebeck effect in our previous paper [H. Sugioka, “Nonlinear thermokinetic phenomena due to the Seebeck effect,” Langmuir 30, 8621 (2014)

Rectified motion in an asymmetrically structured channel due to induced-charge electrokinetic and thermo-kinetic phenomena

Energy Technology Data Exchange (ETDEWEB)

Sugioka, Hideyuki, E-mail: hsugioka@shinshu-u.ac.jp [Frontier Research Center, Canon Inc. 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan and Department of Mechanical Systems Engineering, Shinshu University 4-17-1 Wakasato, Nagano 380-8553 (Japan)

2016-02-15

It would be advantageous to move fluid by the gradient of random thermal noises that are omnipresent in the natural world. To achieve this motion, we propose a rectifier that uses a thermal noise along with induced-charge electroosmosis and electrophoresis (ICEO and ICEP) around a metal post cylinder in an asymmetrically structured channel and numerically examine its rectification performance. By the boundary element method combined with the thin double layer approximation, we find that rectified motion occurs in the asymmetrically structured channel due to ICEO and ICEP. Further, by thermodynamical and equivalent circuit methods, we discuss a thermal voltage that drives a rectifier consisting of a fluidic channel of an electrolyte and an impedance as a noise source. Our calculations show that fluid can be moved in the asymmetrically structured channel by the fluctuation of electric fields due to a thermal noise only when there is a temperature difference. In addition, our simple noise argument provides a different perspective for the thermo-kinetic phenomena (around a metal post) which was predicted based on the electrolyte Seebeck effect in our previous paper [H. Sugioka, “Nonlinear thermokinetic phenomena due to the Seebeck effect,” Langmuir 30, 8621 (2014)].

Status report of the three phase 25 kA, 1.5 kW thermally switched superconducting rectifier, transformer and switches

NARCIS (Netherlands)

ten Kate, Herman H.J.; Holtslag, A.H.M.; Knoben, J.; Steffens, H.A.; van de Klundert, L.J.M.

1983-01-01

A 25 kA, 1.5 kW superconducting rectifier system has been developed. This rectifier system working like an a.c.-d.c, converter with a primary current of 35 A at 0.1Hz, will energize a 25 kA coil with an average power of 5.4 MJ/hr and a proposed energy efficiency of at least 96%. Such a highly

Varying temperature and silicon content in nanodiamond growth: effects on silicon-vacancy centres.

Science.gov (United States)

Choi, Sumin; Leong, Victor; Davydov, Valery A; Agafonov, Viatcheslav N; Cheong, Marcus W O; Kalashnikov, Dmitry A; Krivitsky, Leonid A

2018-02-28

Nanodidamonds containing colour centres open up many applications in quantum information processing, metrology, and quantum sensing. However, controlling the synthesis of nanodiamonds containing silicon vacancy (SiV) centres is still not well understood. Here we study nanodiamonds produced by a high-pressure high-temperature method without catalyst metals, focusing on two samples with clear SiV signatures. Different growth temperatures and relative content of silicon in the initial compound between the samples altered their nanodiamond size distributions and abundance of SiV centres. Our results show that nanodiamond growth can be controlled and optimised for different applications.

2010 NOAA Ortho-rectified Mosaic from Color Aerial Imagery of PORT OF GEORGETOWN - CSCAP

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative of PORT OF GEORGETOWN...

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

Science.gov (United States)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

Solar cells

International Nuclear Information System (INIS)

1980-01-01

A method of producing solar cells is described which consists of producing a substantially monocrystalline tubular body of silicon or other suitable semiconductor material, treating this body to form an annular rectifying junction and then cutting it longitudinally to form a number of nearly flat ribbons from which the solar cells are fabricated. The P=N rectifying junction produced by the formation of silicon dioxide on the layers at the inner and outer surfaces of the body can be formed by ion-implantation or diffusion. (U.K.)

Method of purifying metallurgical grade silicon employing reduced pressure atmospheric control

Science.gov (United States)

Ingle, W. M.; Thompson, S. W.; Chaney, R. E. (Inventor)

1979-01-01

A method in which a quartz tube is charged with chunks of metallurgical grade silicon and/or a mixture of such chunks and high purity quartz sand, and impurities from a class including aluminum, boron, as well as certain transition metals including nickel, iron, and manganese is described. The tube is then evacuated and heated to a temperature within a range of 800 C to 1400 C. A stream of gas comprising a reactant, such as silicon tetrafluoride, is continuously delivered at low pressures through the charge for causing a metathetical reaction of impurities of the silicon and the reactant to occur for forming a volatile halide and leaving a residue of silicon of an improved purity. The reactant which included carbon monoxide gas and impurities such as iron and nickel react to form volatile carbonyls.

High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

International Nuclear Information System (INIS)

McNallan, M.

1993-01-01

Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

Modeling removal of accumulated potassium from T-tubules by inward rectifier potassium channels

NARCIS (Netherlands)

Wallinga, W.; Vliek, M.; Wienk, E.D.; Alberink, M.J.; Ypey, D.L.; Ypey, D.L.

1996-01-01

The membrane models of Cannon et al. (1993) and Alberink et al. (1995) for mammalian skeletal muscle fibers are based upon Hodgkin-Huxley descriptions of sodium, potassium delayed rectifier and leak conductances and the capacitive current taking into account fast inactivation of sodium channels. Now

Accumulation of slowly activating delayed rectifier potassium current (IKs) in canine ventricular myocytes

DEFF Research Database (Denmark)

Stengl, Milan; Volders, Paul G A; Thomsen, Morten Bækgaard

2003-01-01

In guinea-pig ventricular myocytes, in which the deactivation of slowly activating delayed rectifier potassium current (IKs) is slow, IKs can be increased by rapid pacing as a result of incomplete deactivation and subsequent current accumulation. Whether accumulation of IKs occurs in dogs, in which...

Au/n-ZnO rectifying contact fabricated with hydrogen peroxide pretreatment

Science.gov (United States)

Gu, Q. L.; Cheung, C. K.; Ling, C. C.; Ng, A. M. C.; Djurišić, A. B.; Lu, L. W.; Chen, X. D.; Fung, S.; Beling, C. D.; Ong, H. C.

2008-05-01

Au contacts were deposited on n-type ZnO single crystals with and without hydrogen peroxide pretreatment for the ZnO substrate. The Au/ZnO contacts fabricated on substrates without H2O2 pretreatment were Ohmic and those with H2O2 pretreatment were rectifying. With an aim of fabricating a good quality Schottky contact, the rectifying property of the Au/ZnO contact was systemically investigated by varying the treatment temperature and duration. The best performing Schottky contact was found to have an ideality factor of 1.15 and a leakage current of ˜10-7 A cm-2. A multispectroscopic study, including scanning electron microscopy, positron annihilation spectroscopy, deep level transient spectroscopy, x-ray photoelectron spectroscopy, and photoluminescence, showed that the H2O2 treatment removed the OH impurity and created Zn-vacancy related defects hence decreasing the conductivity of the ZnO surface layer, a condition favorable for forming good Schottky contact. However, the H2O2 treatment also resulted in a deterioration of the surface morphology, leading to an increase in the Schottky contact ideality factor and leakage current in the case of nonoptimal treatment time and temperature.

Regulation of the instantaneous inward rectifier and the delayed outward rectifier potassium channels by Captopril and Angiotensin II via the Phosphoinositide-3 kinase pathway in volume-overload-induced hypertrophied cardiac myocytes.

Science.gov (United States)

Alvin, Zikiar V; Laurence, Graham G; Coleman, Bernell R; Zhao, Aiqiu; Hajj-Moussa, Majd; Haddad, Georges E

2011-07-01

Early development of cardiac hypertrophy may be beneficial but sustained hypertrophic activation leads to myocardial dysfunction. Regulation of the repolarizing currents can be modulated by the activation of humoral factors, such as angiotensin II (ANG II) through protein kinases. The aim of this work is to assess the regulation of IK and IK1 by ANG II through the PI3-K pathway in hypertrophied ventricular myocytes. Cardiac eccentric hypertrophy was induced through volume-overload in adult male rats by aorto-caval shunt (3 weeks). After one week half of the rats were given captopril (2 weeks; 0.5 g/l/day) and the other half served as control. The voltage-clamp and western blot techniques were used to measure the delayed outward rectifier potassium current (IK) and the instantaneous inward rectifier potassium current (IK1) and Akt activity, respectively. Hypertrophied cardiomyocytes showed reduction in IK and IK1. Treatment with captopril alleviated this difference seen between sham and shunt cardiomyocytes. Acute administration of ANG II (10-6M) to cardiocytes treated with captopril reduced IK and IK1 in shunts, but not in sham. Captopril treatment reversed ANG II effects on IK and IK1 in a PI3-K-independent manner. However in the absence of angiotensin converting enzyme inhibition, ANG II increased both IK and IK1 in a PI3-K-dependent manner in hypertrophied cardiomyocytes. Thus, captopril treatment reveals a negative effect of ANG II on IK and IK1, which is PI3-K independent, whereas in the absence of angiotensin converting enzyme inhibition IK and IK1 regulation is dependent upon PI3-K.

In situ nanoscale refinement by highly controllable etching of the (111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire

International Nuclear Information System (INIS)

Gong Yibin; Dai Pengfei; Gao Anran; Li Tie; Zhou Ping; Wang Yuelin

2011-01-01

Nanoscale refinement on a (100) oriented silicon-on-insulator (SOI) wafer was introduced by using tetra-methyl-ammonium hydroxide (TMAH, 25 wt%) anisotropic silicon etchant, with temperature kept at 50 °C to achieve precise etching of the (111) crystal plane. Specifically for a silicon nanowire (SiNW) with oxide sidewall protection, the in situ TMAH process enabled effective size reduction in both lateral (2.3 nm/min) and vertical (1.7 nm/min) dimensions. A sub-50 nm SiNW with a length of microns with uniform triangular cross-section was achieved accordingly, yielding enhanced field effect transistor (FET) characteristics in comparison with its 100 nm-wide pre-refining counterpart, which demonstrated the feasibility of this highly controllable refinement process. Detailed examination revealed that the high surface quality of the (111) plane, as well as the bulk depletion property should be the causes of this electrical enhancement, which implies the great potential of the as-made cost-effective SiNW FET device in many fields. (semiconductor materials)

Subwavelength silicon photonics

International Nuclear Information System (INIS)

Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

2011-01-01

With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

Science.gov (United States)

Cho, Heesook; Yoo, Hana; Park, Soojin

2010-05-18

Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

Custom 3D Printable Silicones with Tunable Stiffness.

Science.gov (United States)

Durban, Matthew M; Lenhardt, Jeremy M; Wu, Amanda S; Small, Ward; Bryson, Taylor M; Perez-Perez, Lemuel; Nguyen, Du T; Gammon, Stuart; Smay, James E; Duoss, Eric B; Lewicki, James P; Wilson, Thomas S

2018-02-01

Silicone elastomers have broad versatility within a variety of potential advanced materials applications, such as soft robotics, biomedical devices, and metamaterials. A series of custom 3D printable silicone inks with tunable stiffness is developed, formulated, and characterized. The silicone inks exhibit excellent rheological behavior for 3D printing, as observed from the printing of porous structures with controlled architectures. Herein, the capability to tune the stiffness of printable silicone materials via careful control over the chemistry, network formation, and crosslink density of the ink formulations in order to overcome the challenging interplay between ink development, post-processing, material properties, and performance is demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

Energy Technology Data Exchange (ETDEWEB)

Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Wang, Xiaodong, E-mail: xdwang@semi.ac.cn; Ji, An; Yang, Fuhua [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China)

2014-03-15

The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V) characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

Science.gov (United States)

Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Wang, Xiaodong; Ji, An; Yang, Fuhua

2014-03-01

The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V) characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

Creating New VLS Silicon Nanowire Contact Geometries by Controlling Catalyst Migration

DEFF Research Database (Denmark)

Alam, Sardar Bilal; Panciera, Federico; Hansen, Ole

2015-01-01

The formation of self-assembled contacts between vapor-liquid-solid grown silicon nanowires and flat silicon surfaces was imaged in situ using electron microscopy. By measuring the structural evolution of the contact formation process, we demonstrate how different contact geometries are created b...

Highly efficient integrated rectifier and voltage boosting circuits for energy harvesting applications

Directory of Open Access Journals (Sweden)

D. Maurath

2008-05-01

Full Text Available This paper presents novel circuit concepts for integrated rectifiers and voltage converting interfaces for energy harvesting micro-generators. In the context of energy harvesting, usually only small voltages are supplied by vibration-driven generators. Therefore, rectification with minimum voltage losses and low reverse currents is an important issue. This is realized by novel integrated rectifiers which were fabricated and are presented in this article. Additionally, there is a crucial need for dynamic load adaptation as well as voltage up-conversion. A circuit concept is presented, which is able to obtain both requirements. This generator interface adapts its input impedance for an optimal energy transfer efficiency. Furthermore, this generator interface provides implicit voltage up-conversion, whereas the generator output energy is stored on a buffer, which is connected to the output of the voltage converting interface. As simulations express, this fully integrated converter is able to boost ac-voltages greater than |0.35 V| to an output dc-voltage of 2.0 V–2.5 V. Thereby, high harvesting efficiencies above 80% are possible within the entire operational range.

Single-Phase Full-Wave Rectifier as an Effective Example to Teach Normalization, Conduction Modes, and Circuit Analysis Methods

Directory of Open Access Journals (Sweden)

Predrag Pejovic

2013-12-01

Full Text Available Application of a single phase rectifier as an example in teaching circuit modeling, normalization, operating modes of nonlinear circuits, and circuit analysis methods is proposed.The rectifier supplied from a voltage source by an inductive impedance is analyzed in the discontinuous as well as in the continuous conduction mode. Completely analytical solution for the continuous conduction mode is derived. Appropriate numerical methods are proposed to obtain the circuit waveforms in both of the operating modes, and to compute the performance parameters. Source code of the program that performs such computation is provided.

Novel composite resonance DC-DC converter with voltage doubler rectifier

OpenAIRE

Kato, Hisatsugu; Matsuo, Hirohumi; Eguchi, Masaki; Sakamoto, Yukitaka; Nakaishi, Masaki

2009-01-01

This paper deals with a novel composite resonance DC-DC converter with the voltage doubler rectifier, which is developed to be applied to the power conditioner of the photovoltaic generation system. The proposed DC-DC converter has the current and voltage resonance functions. Therefore, the output voltage regulation can be achieved for the large variations of the input voltage and load. Also, this converter has the high power efficiency. The maximum power efficiency 96.1% can be realized.

Rectifier Fault Diagnosis and Fault Tolerance of a Doubly Fed Brushless Starter Generator

Directory of Open Access Journals (Sweden)

Liwei Shi

2015-01-01

Full Text Available This paper presents a rectifier fault diagnosis method with wavelet packet analysis to improve the fault tolerant four-phase doubly fed brushless starter generator (DFBLSG system reliability. The system components and fault tolerant principle of the high reliable DFBLSG are given. And the common fault of the rectifier is analyzed. The process of wavelet packet transforms fault detection/identification algorithm is introduced in detail. The fault tolerant performance and output voltage experiments were done to gather the energy characteristics with a voltage sensor. The signal is analyzed with 5-layer wavelet packets, and the energy eigenvalue of each frequency band is obtained. Meanwhile, the energy-eigenvalue tolerance was introduced to improve the diagnostic accuracy. With the wavelet packet fault diagnosis, the fault tolerant four-phase DFBLSG can detect the usual open-circuit fault and operate in the fault tolerant mode if there is a fault. The results indicate that the fault analysis techniques in this paper are accurate and effective.

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Controlled ion-beam transformation of silicon bipolar microwave power transistor's characteristics

International Nuclear Information System (INIS)

Solodukha, V.A.; Snitovskij, Yu.P.

2015-01-01

In this article, a method for changing the silicon bipolar microwave power transistor's characteristics in a direct and deliberate manner by modifying the chemical composition at the molybdenum - silicon boundary, the electro-physical properties of molybdenum - silicon contacts, and the electrophysical characteristics of transistor structure areas by the phosphorus ions irradiation of generated ohmic molybdenum - silicon contacts to the transistor emitters is proposed for the first time. The possibilities of this method are investigated and confirmed experimentally. (authors)

Influence of load type on power factor and harmonic composition of three-phase rectifier current

Science.gov (United States)

Nikolayzin, N. V.; Vstavskaya, E. V.; Konstantinov, V. I.; Konstantinova, O. V.

2018-05-01

This article is devoted to research of the harmonic composition of the three-phase rectifier current consumed when it operates with different types of load. The results are compared with Standard requirements.

Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

Science.gov (United States)

Colston, Gerard; Myronov, Maksym

2017-11-01

Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

Experimental results of thermally controlled superconducting switches for high frequency operation

International Nuclear Information System (INIS)

Mulder, G.B.J.; IerAvest, D.; Tenkate, H.H.J.; Krooshoop, H.J.G.; Van de Klundert, L.

1988-01-01

The aim of this study is to develop thermally controlled switches which are to be used in superconducting rectifiers operating at a few hertz and 1 kA. Usually, the operating frequency of thermally controlled rectifiers is limited to about 0.1 Hz due to the thermal recovery times of the switches. The thermal switches have to satisfy two conditions which are specific for the application in a superconducting rectifier: a) they have to operate in the repetitive mode so beside short activation times, fast recovery times of the switches are equally important, b) the power required to effect and maintain the normal state of the switches should be low since it will determine the rectifier efficiency. To what extent these obviously conflicting demands can be satisfied depends on the material and geometry of the switch. This paper presents a theoretical model of the thermal behaviour of a switch. The calculations are compared with experimental results of several switches having recovery times between 40 and 200 ms. Also, the feasibility of such switches for application in superconducting rectifiers operating at a few hertz with an acceptable efficiency is demonstrated

Effect of argon implantation on solid-state dewetting: control of size and surface density of silicon nanocrystals.

Science.gov (United States)

Almadori, Y; Borowik, Ł; Chevalier, N; Barbé, J-C

2017-01-27

Thermally induced solid-state dewetting of ultra-thin films on insulators is a process of prime interest, since it is capable of easily forming nanocrystals. If no particular treatment is performed to the film prior to the solid-state dewetting, it is already known that the size, the shape and the density of nanocrystals is governed by the initial film thickness. In this paper, we report a novel approach to control the size and the surface density of silicon nanocrystals based on an argon-implantation preliminary surface treatment. Using 7.5 nm thin layers of silicon, we show that increasing the implantation dose tends to form smaller silicon nanocrystals with diameter and height lower than 50 nm and 30 nm, respectively. Concomitantly, the surface density is increased by a factor greater than 20, going from 5 μm -2 to values over 100 μm -2 .

Luminescence in amorphous silicon p-i-n diodes under double-injection dispersive-transport-controlled recombination

International Nuclear Information System (INIS)

Han, D.; Wang, K.; Yeh, C.; Yang, L.; Deng, X.; Von Roedern, B.

1997-01-01

The temperature and electric-field dependence of the forward bias current and the electroluminescence (EL) in hydrogenated amorphous silicon (a-Si:H) p-i-n and n-i-p diodes have been studied. Both the current and the EL efficiency temperature dependence show three regions depending on either hopping-controlled or multiple-trapping or ballistic transport mechanisms. Comparing the thermalization-controlled geminate recombination processes of photoluminescence to the features of EL, the differences can be explained by transport-controlled nongeminate recombination in trap-rich materials. copyright 1997 The American Physical Society

A New Class III Antiarrhythmic Drug Niferidil Prolongs Action Potentials in Guinea Pig Atrial Myocardium via Inhibition of Rapid Delayed Rectifier.

Science.gov (United States)

Abramochkin, Denis V; Kuzmin, Vladislav S; Rosenshtraukh, Leonid V

2017-12-01

A new class III antiarrhythmic drug niferidil (RG-2) has been introduced as a highly effective therapy for cases of persistent atrial fibrillation, but ionic mechanisms of its action are poorly understood. In the present study, the effects of niferidil on action potential (AP) waveform and potassium currents responsible for AP repolarization were investigated in guinea pig atrial myocardium. APs were recorded with sharp glass microelectrodes in multicellular atrial preparations. Whole-cell patch-clamp technique was used to measure K + currents in isolated myocytes. In multicellular atrial preparations, 10 -8  M niferidil effectively prolonged APs by 15.2 ± 2.8% at 90% repolarization level. However, even the highest tested concentrations, 10 -6  M and 10 -5  M failed to prolong APs more than 32.5% of control duration. The estimated concentration of niferedil for half-maximal AP prolongation was 1.13 × 10 -8  M. Among the potassium currents responsible for AP repolarization phase, I K1 was found to be almost insensitive to niferidil. However, another inward rectifier, I KACh , was effectively suppressed by micromolar concentrations of niferidil with IC 50  = 9.2 × 10 -6  M. I KATP was much less sensitive to the drug with IC 50  = 2.26 × 10 -4  M. The slow component of delayed rectifier, I Ks , also demonstrated low sensitivity to niferidil-the highest used concentration, 10 -4  M, decreased peak I Ks density to 46.2 ± 5.5% of control. Unlike I Ks , the rapid component of delayed rectifier, I Kr , appeared to be extremely sensitive to niferidil. The IC 50 was 1.26 × 10 -9  M. I Kr measured in ventricular myocytes was found to be less sensitive to niferidil with IC 50  = 3.82 × 10 -8  M. Niferidil prolongs APs in guinea pig atrial myocardium via inhibition of I Kr .

Optoelectrical Properties of a Heterojunction with Amorphous InGaZnO Film on n-Silicon Substrate

Science.gov (United States)

Jiang, D. L.; Ma, X. Z.; Li, L.; Xu, Z. K.

2017-10-01

An a-IGZO/ n-Si heterojunction device has been fabricated at room temperature by depositing amorphous InGaZnO (a-IGZO) film on n-type silicon substrate by plasma-assisted pulsed laser deposition and its optoelectrical properties studied in detail. The heterojunction showed distinct rectifying characteristic with rectification ratio of 1.93 × 103 at ±2 V bias and reverse leakage current density of 1.6 × 10-6 A cm-2 at -2 V bias. More interestingly, the heterojunction not only showed the characteristic of unbiased photoresponse, but could also detect either ultraviolet or ultraviolet-visible light by simply changing the polarity of the bias applied to the heterojunction. The variable photoresponse phenomenon and the charge transport mechanisms in the heterojunction are explained based on the energy band diagram of the heterojunction.

2010 NOAA Ortho-rectified Mosaic from Color Aerial Imagery of MISSISSIPPI RIVER - LAPLACE TO VENICE

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative of MISSISSIPPI RIVER -...

2012 NOAA Ortho-rectified Near-Infrared MLLW Mosaic of Pescadero Point to Bodega Bay, California

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2012 NOAA Ortho-rectified Near-Infrared MLLW Mosaic of Lopez Rock to Pescadero Point, California

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2013 NOAA Ortho-rectified Near-Infrared Mosaic of Virginia: Norfolk, Hampton Roads,and Newport News

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2016 NOAA NGS Ortho-rectified Mean High Water Color Mosaic of Venice Inlet ICW, Florida

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2013 NOAA Ortho-rectified Color Mosaic of Intercoastal Waterway - Calcasieu Lake to Vermillion Bay, Louisiana

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2012 NOAA Ortho-rectified Color MHW Mosaic of Washington: Seattle and Lake Washington Ship Canal

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2012 NOAA Ortho-rectified Color Mosaic of Del Mar Boat Basin and Oceanside Harbor, California

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2012 NOAA Ortho-rectified Near-Infrared MLLW Mosaic of Seal Rock to Lopez Rock, California

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2013 NOAA Ortho-rectified Color Mosaic of California: Port of Los Angeles and Long Beach

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

Silicon Nanocrystal Synthesis in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

2010 NOAA Ortho-rectified Mosaic from Color Aerial Imagery of LAKE CHARLES (NODC Accession 0075827)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative of LAKE CHARLES. The...

Efficacy of the Power Balance Silicone Wristband: a single-blind, randomized, triple placebo-controlled study.

Science.gov (United States)

Pothier, David D; Thiel, Gundula; Khoo, S G; Dillon, Wanda A; Sulway, Shaleen; Rutka, John A

2012-06-01

The Power Balance Silicone Wristband (Power Balance LLC, Laguna Niguel, CA) (power balance band; PBB) consists of a silicone wristband, incorporating two holograms, which is meant to confer improvements in balance on the wearer. Despite its popularity, the PBB has become somewhat controversial, with a number of articles being published in the news media regarding its efficacy. The PBB has not been formally evaluated but remains popular, largely based on anecdotal evidence. This study subjectively and objectively measured the effects of the PBB on balance in normal participants. A prospective, single-blind, randomized, triple placebo-controlled crossover study was undertaken. Twenty participants underwent measurement using the modified Test of Sensory Interaction on Balance (mCTSIB) and gave subjective feedback (visual analogue scale [VAS]) for each of four band conditions: no band, a silicone band, a deactivated PBB, and the PBB. Participants acted as their own controls. The mean of the four mCTSIB conditions (eyes open and closed on both firm and compliant surfaces) was calculated. This mean value and condition 4 of the mCTSIB were compared between band conditions using path length (PL) and root mean square (RMS) as outcome measures. No significant differences were found between band conditions for PL (p  =  .91 and p  =  .94, respectively) and RMS (p  =  .85 and p  =  .96, respectively). VASs also showed no difference between bands (p  =  .25). The PBB appears to have no effect on mCTSIB or VAS measurements of balance.

Resistivity distribution of silicon single crystals using codoping

Science.gov (United States)

Wang, Jong Hoe

2005-07-01

Numerous studies including continuous Czochralski method and double crucible technique have been reported on the control of macroscopic axial resistivity distribution in bulk crystal growth. The simple codoping method for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. Wang [J. Crystal Growth 275 (2005) e73] demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in melt growth of silicon crystals and relatively uniform profile is possible by B-P codoping method. In this work, the basic characteristic of 8 in silicon single crystal grown using codoping method is studied and whether proposed method has advantage for the silicon crystal growth is discussed.

Inhibitory Effect of Vascular Endothelial Growth Factor on the Slowly Activating Delayed Rectifier Potassium Current in Guinea Pig Ventricular Myocytes.

Science.gov (United States)

Lin, Zhenhao; Xing, Wenlu; Gao, Chuanyu; Wang, Xianpei; Qi, Datun; Dai, Guoyou; Zhao, Wen; Yan, Ganxin

2018-01-26

Vascular endothelial growth factor (VEGF) exerts a number of beneficial effects on ischemic myocardium via its angiogenic properties. However, little is known about whether VEGF has a direct effect on the electrical properties of cardiomyocytes. In the present study, we investigated the effects of different concentrations of VEGF on delayed rectifier potassium currents (I K ) in guinea pig ventricular myocytes and their effects on action potential (AP) parameters. I K and AP were recorded by the whole-cell patch clamp method in ventricular myocytes. Cells were superfused with control solution or solution containing VEGF at different concentrations for 10 minutes before recording. Some ventricular myocytes were pretreated with a phosphatidylinositol 3-kinase inhibitor for 1 hour before the addition of VEGF. We found that VEGF inhibited the slowly activating delayed rectifier potassium current (I K s ) in a concentration-dependent manner (18.13±1.04 versus 12.73±0.34, n=5, P =0.001; 12.73±0.34 versus 9.05±1.20, n=5, P =0.036) and prolonged AP duration (894.5±36.92 versus 746.3±33.71, n=5, P =0.021). Wortmannin, a phosphatidylinositol 3-kinase inhibitor, eliminated these VEGF-induced effects. VEGF had no significant effect on the rapidly activating delayed rectifier potassium current (I K r ), resting membrane potential, AP amplitude, or maximal velocity of depolarization. VEGF inhibited I K s in a concentration-dependent manner through a phosphatidylinositol 3-kinase-mediated signaling pathway, leading to AP prolongation. The results indicate a promising therapeutic potential of VEGF in prevention of ventricular tachyarrhythmias under conditions of high sympathetic activity and ischemia. © 2018 The Authors. Published on behalf of the American Heart Association, Inc., by Wiley.

Deposition of controllable preferred orientation silicon films on glass by inductively coupled plasma chemical vapor deposition

International Nuclear Information System (INIS)

Li Junshuai; Wang Jinxiao; Yin Min; Gao Pingqi; He Deyan; Chen Qiang; Li Yali; Shirai, Hajime

2008-01-01

An inductively coupled plasma (ICP) system with the adjustable distance between the inductance coil and substrates was designed to effectively utilize the spatial confinement of ICP discharge, and then control the gas-phase transport process. The effects of the gas phase processes on the crystallinity and preferred orientation of silicon films deposited on glass were systematically investigated. The investigation was conducted in the ICP-chemical vapor deposition process with the precursor gas of a SiH 4 /H 2 mixture at a substrate temperature of 350 deg. Highly crystallized silicon films with different preferred orientations, (111) or (220), could be selectively deposited by adjusting the SiH 4 dilution ratio [R=[SiH 4 ]/([SiH 4 ]+[H 2 ])] or total working pressure. When the total working pressure is 20 Pa, the crystallinity of the silicon films increases with the increase of the SiH 4 dilution ratio, while the preferred orientation was changed from (111) to (220). In the case of the fixed SiH 4 dilution (10%), the silicon film with I (220) /I (111) of about 3.5 and Raman crystalline fraction of about 89.6% has been deposited at 29.7 nm/min when the total working pressure was increased to 40 Pa. At the fixed SiH 4 partial pressure of 2 Pa, the film crystallinity decreases and the preferred orientation is always (111) with increasing the H 2 partial pressure from 18 to 58 Pa. Atomic force microscope reveals that the film deposited at a relatively high H 2 partial pressure has a very rough surface caused by the devastating etching of H atoms to the silicon network

Pharmacological modulations of cardiac ultra-rapid and slowly activating delayed rectifier currents: potential antiarrhythmic approaches.

Science.gov (United States)

Islam, Mohammed A

2010-01-01

Despite the emerging new insights into our understandings of the cellular mechanisms underlying cardiac arrhythmia, medical therapy for this disease remains unsatisfactory. Atrial fibrillation (AF), the most prevalent arrhythmia, is responsible for significant morbidity and mortality. On the other hand, ventricular fibrillation results in sudden cardiac deaths in many instances. Prolongation of cardiac action potential (AP) is a proven principle of antiarrhythmic therapy. Class III antiarrhythmic agents prolong AP and QT interval by blocking rapidly activating delayed rectifier current (I(Kr)). However, I(Kr) blocking drugs carry the risk of life-threatening proarrhythmia. Recently, modulation of atrial-selective ultra-rapid delayed rectifier current (I(Kur)), has emerged as a novel therapeutic approach to treat AF. A number of I(Kur) blockers are being evaluated for the treatment of AF. The inhibition of slowly activating delayed rectifier current (I(Ks)) has also been proposed as an effective and safer antiarrhythmic approach because of its distinguishing characteristics that differ in remarkable ways from other selective class III agents. Selective I(Ks) block may prolong AP duration (APD) at rapid rates without leading to proarrhythmia. This article reviews the pathophysiological roles of I(Kur) and I(Ks) in cardiac repolarization and the implications of newly developed I(Kur) and I(Ks) blocking agents as promising antiarrhythmic approaches. Several recent patents pertinent to antiarrhythmic drug development have been discussed. Further research will be required to evaluate the efficacy and safety of these agents in the clinical setting.

Biophysical characterization of inwardly rectifying potassium currents (I(K1) I(K,ACh), I(K,Ca)) using sinus rhythm or atrial fibrillation action potential waveforms

DEFF Research Database (Denmark)

Tang, Chuyi; Skibsbye, Lasse; Yuan, Lei

2015-01-01

Although several physiological, pathophysiological and regulatory properties of classical inward rectifier K+ current I(K1), G-protein coupled inwardly-rectifying K+ current I(K,ACh) and the small-conductance Ca2+ activated K+ current I(K,Ca) have been identified, quantitative biophysical details...

Wind-powered asynchronous AC/DC/AC converter system. [for electric power supply regulation

Science.gov (United States)

Reitan, D. K.

1973-01-01

Two asynchronous ac/dc/ac systems are modelled that utilize wind power to drive a variable or constant hertz alternator. The first system employs a high power 60-hertz inverter tie to the large backup supply of the power company to either supplement them from wind energy, storage, or from a combination of both at a preset desired current; rectifier and inverter are identical and operate in either mode depending on the silicon control rectifier firing angle. The second system employs the same rectification but from a 60-hertz alternator arrangement; it provides mainly dc output, some sinusoidal 60-hertz from the wind bus and some high harmonic content 60-hertz from an 800-watt inverter.

Mechanism of single atom switch on silicon

DEFF Research Database (Denmark)

Quaade, Ulrich; Stokbro, Kurt; Thirstrup, C.

1998-01-01

We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias...

Optimal control of wind power plants

NARCIS (Netherlands)

Steinbuch, M.; Boer, de W.W.; Bosgra, O.H.; Peeters, S.A.W.M.; Ploeg, J.

1988-01-01

The control system design for a wind power plant is investigated. Both theoverall wind farm control and the individual wind turbine control effect thewind farm dynamic performance.For a wind turbine with a synchronous generator and rectifier/invertersystem a multivariable controller is designed.

Effectiveness of the custom-mold room temperature vulcanizing silicone toe separator on hallux valgus: A prospective, randomized single-blinded controlled trial.

Science.gov (United States)

Chadchavalpanichaya, Navaporn; Prakotmongkol, Voraluck; Polhan, Nattapong; Rayothee, Pitchaya; Seng-Iad, Sirirat

2018-04-01

Silicone toe separator is considered as a conservative treatment for hallux valgus. The prefabricated toe separator does not fit all. However, effectiveness in prescription of the custom-mold toe separator is still unknown. To investigate the effect of using a custom-mold room temperature vulcanizing silicone toe separator to decrease hallux valgus angle and hallux pain. The compliances, complications, and satisfactions of toe separator were also explored. A prospective, randomized single-blinded controlled trial. A total of 90 patients with a moderate degree of hallux valgus were enrolled in a study at the Foot Clinic, Siriraj Hospital, Thailand. Patients were randomized into two groups; the study group was prescribed a custom-mold room temperature vulcanizing silicone toe separator for 6 h per night for 12 months. Patients in both groups received proper foot care and shoes and were permitted to continue drug treatment. In total, 40 patients in the study group and 39 patients in the control group completed the study. The hallux valgus angle was obtained through radiographic measurement. At month 12, both groups had significant differences in mean hallux valgus angle with a decrease of 3.3° ± 2.4° for the study group and increase of 1.9° ± 1.9° for the control group. There were statistically significant differences of hallux valgus angle between the two groups ( p Hallux pain was decreased in the study group. A custom-mold room temperature vulcanizing silicone toe separator can decrease hallux valgus angle and pain with no serious complications. Clinical relevance The custom-mold room temperature vulcanizing silicone toe separator for treatment of hallux valgus reduces deformity and hallux pain.

Development and testing of a 1/10 scale self-rectifying air turbine power conversion system. For period December 1979 to February 1981

Energy Technology Data Exchange (ETDEWEB)

White, P.R.S.

1981-08-01

In December 1979 the SEA-Lanchester Wave Energy Group started a programme of theoretical and experimental work to investigate the performance of a self-rectifying air turbine based on the idea first proposed by Dr. A.A. Wells. The work was initiated to provide the project team with accurate design data for the power take off in order that the complete system performance could be analysed. It was felt necessary to provide this data in house, as at that time no results were available from the other groups working with self rectifying air turbines. The result of the work described in the report is that a self rectifying turbine of the Wells type provides a very efficient, elegant, simple and therefore reliable, solution to the power take off aspect of the CLAM Wave Energy Converter.

An isolated bridgeless AC-DC PFC converter using a LC resonant voltage doubler rectifier

Science.gov (United States)

Lee, Sin-woo; Do, Hyun-Lark

2016-12-01

This paper proposed an isolated bridgeless AC-DC power factor correction (PFC) converter using a LC resonant voltage doubler rectifier. The proposed converter is based on isolated conventional single-ended primary inductance converter (SEPIC) PFC converter. The conduction loss of rectification is reduced than a conventional one because the proposed converter is designed to eliminate a full-bridge rectifier at an input stage. Moreover, for zero-current switching (ZCS) operation and low voltage stresses of output diodes, the secondary of the proposed converter is designed as voltage doubler with a LC resonant tank. Additionally, an input-output electrical isolation is provided for safety standard. In conclusion, high power factor is achieved and efficiency is improved. The operational principles, steady-state analysis and design equations of the proposed converter are described in detail. Experimental results from a 60 W prototype at a constant switching frequency 100 kHz are presented to verify the performance of the proposed converter.

Manufacturing Methods and Technology Measure for Fabrication of Silicon Transcalent Rectifier.

Science.gov (United States)

1980-09-01

development and manufacturing as well as quality and reliability assurance of the 1 product. Marketing and Applications Engineering are responsible for...Prod Test/Eval’, z HA Kotler a Patent- Power & E 1 RM Roderick Env. Eng. & Test 1 JB Grosh Iron Mouptain - .l TUBE PARTS MFG. 5 RL SPALDING...Engineering Specification Request endorsed by authorized approvers from both Operations and Marketing . At this time, controlling Engineering Specifications

Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film

International Nuclear Information System (INIS)

Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

2015-01-01

Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices’ applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H 2 O 2 /HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing. (paper)

Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film.

Science.gov (United States)

Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

2015-04-17

Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices' applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H2O2/HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing.

Doping of silicon by carbon during laser ablation process

Science.gov (United States)

Raciukaitis, G.; Brikas, M.; Kazlauskiene, V.; Miskinis, J.

2007-04-01

Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser power or UV radiation. Carbon ions created bonds with silicon in the depth of silicon. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion was performed to clarify its depth profile in silicon. Photo-chemical reactions of such type changed the structure of material and could be a reason for the reduced quality of machining. A controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

Doping of silicon by carbon during laser ablation process

International Nuclear Information System (INIS)

Raciukaitis, G; Brikas, M; Kazlauskiene, V; Miskinis, J

2007-01-01

Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser power or UV radiation. Carbon ions created bonds with silicon in the depth of silicon. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion was performed to clarify its depth profile in silicon. Photo-chemical reactions of such type changed the structure of material and could be a reason for the reduced quality of machining. A controlled atmosphere was applied to prevent carbonization of silicon during laser cutting

Indirect control of a single-phase active power filter

Directory of Open Access Journals (Sweden)

Mihai CULEA

2006-12-01

Full Text Available The control of shunt active power filters using PWM inverters consists in generating a reference by separating, using different methods, the harmonics to be eliminated. The methods used are time-consuming and need dedicated control and signal processing equipments. To avoid these setbacks a new method is proposed in the paper. The active power filter is a current PWM rectifier with voltage output and with a capacitor on the DC side. The PWM rectifier is controlled so that the sum of its current and the load’s current is a sinusoid. The control block as well as simulation results are presented.

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Iodine 125 Brachytherapy With Vitrectomy and Silicone Oil in the Treatment of Uveal Melanoma: 1-to-1 Matched Case-Control Series

International Nuclear Information System (INIS)

McCannel, Tara A.; McCannel, Colin A.

2014-01-01

Purpose: We initially reported the radiation-attenuating effect of silicone oil 1000 centistokes for iodine 125. The purpose of this report was to compare the clinical outcomes in case patients who had iodine 125 brachytherapy with vitrectomy and silicone oil 1000 centistokes with the outcomes in matched control patients who underwent brachytherapy alone. Methods and Materials: Consecutive patients with uveal melanoma who were treated with iodine 125 plaque brachytherapy and vitrectomy with silicone oil with minimum 1-year follow-up were included. Control patients who underwent brachytherapy alone were matched for tumor size, location, and sex. Baseline patient and tumor characteristics and tumor response to radiation, final visual acuity, macular status, central macular thickness by ocular coherence tomography (OCT), cataract progression, and metastasis at last follow-up visit were compared. Surgical complications were also determined. Results: Twenty case patients met the inclusion criteria. The average follow-up time was 22.1 months in case patients and 19.4 months in control patients. The final logMAR vision was 0.81 in case patients and 1.1 in control patients (P=.071); 8 case patients and 16 control patients had abnormal macular findings (P=.011); and the average central macular thickness by OCT was 293.2 μm in case patients and 408.5 μm in control patients (P=.016). Eleven case patients (55%) and 1 control patient (5%) had required cataract surgery at last follow-up (P=.002). Four patients in the case group and 1 patient in the control group experienced metastasis (P=.18). Among the cases, intraoperative retinal tear occurred in 3 patients; total serous retinal detachment and macular hole developed in 1 case patient each. There was no case of rhegmatogenous retinal detachment, treatment failure, or local tumor dissemination in case patients or control patients. Conclusions: With up to 3 years of clinical follow-up, silicone oil during brachytherapy

Iodine 125 Brachytherapy With Vitrectomy and Silicone Oil in the Treatment of Uveal Melanoma: 1-to-1 Matched Case-Control Series

Energy Technology Data Exchange (ETDEWEB)

McCannel, Tara A., E-mail: TMcCannel@jsei.ucla.edu; McCannel, Colin A.

2014-06-01

Purpose: We initially reported the radiation-attenuating effect of silicone oil 1000 centistokes for iodine 125. The purpose of this report was to compare the clinical outcomes in case patients who had iodine 125 brachytherapy with vitrectomy and silicone oil 1000 centistokes with the outcomes in matched control patients who underwent brachytherapy alone. Methods and Materials: Consecutive patients with uveal melanoma who were treated with iodine 125 plaque brachytherapy and vitrectomy with silicone oil with minimum 1-year follow-up were included. Control patients who underwent brachytherapy alone were matched for tumor size, location, and sex. Baseline patient and tumor characteristics and tumor response to radiation, final visual acuity, macular status, central macular thickness by ocular coherence tomography (OCT), cataract progression, and metastasis at last follow-up visit were compared. Surgical complications were also determined. Results: Twenty case patients met the inclusion criteria. The average follow-up time was 22.1 months in case patients and 19.4 months in control patients. The final logMAR vision was 0.81 in case patients and 1.1 in control patients (P=.071); 8 case patients and 16 control patients had abnormal macular findings (P=.011); and the average central macular thickness by OCT was 293.2 μm in case patients and 408.5 μm in control patients (P=.016). Eleven case patients (55%) and 1 control patient (5%) had required cataract surgery at last follow-up (P=.002). Four patients in the case group and 1 patient in the control group experienced metastasis (P=.18). Among the cases, intraoperative retinal tear occurred in 3 patients; total serous retinal detachment and macular hole developed in 1 case patient each. There was no case of rhegmatogenous retinal detachment, treatment failure, or local tumor dissemination in case patients or control patients. Conclusions: With up to 3 years of clinical follow-up, silicone oil during brachytherapy

Energy Saving in Three-Phase Diode Rectifiers Using EI Technique with Adjustable Switching Frequency Scheme

DEFF Research Database (Denmark)

Davari, Pooya; Zare, Firuz; Yang, Yongheng

2016-01-01

A front-end rectifier can significantly impact a power electronics system performance and efficiency for applications such as motor drive where the system commonly operates under partial loading conditions. This paper proposes an adjustable switching frequency scheme using an electronic inductor...

Enterovaginal or Vesicovaginal Fistula Control Using a Silicone Cup.

Science.gov (United States)

Russell, Katie W; Robinson, Ryan E; Mone, Mary C; Scaife, Courtney L

2016-12-01

An enterovaginal or vesicovaginal fistula is a complication resulting in vaginal discharge of succus, urine, or stool that can lead to significant complications. For low-volume fistulae, tampons or pads may be used. With high-volume fistulae, frequent product change can be painful and unpredictable in terms of efficacy. The psychologic distress is profound. Surgery may not be an option, making symptom control the priority. We report the use of a reusable menstrual silicone vaginal cup placed to divert and contain drainage. The menstrual cup provided significant symptom relief. Drainage is immediately diverted from tissue, unlike with tampon or pad use, which involves longer contact periods with caustic fluids. A system was created by adapting the end of the cup by adding silastic tubing and an external leg bag to provide long-term drainage control. Improvement in quality of life is of primary importance when dealing with fistula drainage. This simple and inexpensive device should be considered in those cases in which the drainage can be diverted as a viable option, especially in those who are symptomatic and awaiting surgical repair or in those for whom surgery cannot be performed.

Superconducting transformers, rectifiers, and switches. (Review paper)

International Nuclear Information System (INIS)

Ignatov, V.E.; Koval'kov, G.A.; Moskvitin, A.I.

Cryogenic rectifiers using power cryotrons have been fabricated by many foreign firms since 1960. Present-day flux pumps require a low voltage power supply (several tens of millivolts) and a high current (kiloamperes). Increasing the power supply voltage will quadratically increase the flux pump losses and, given the limitations of existing materials, are not economically profitable. Present-day, cryotron-type flux pumps can best be used in power systems as a power supply for superconducting magnets, solenoids, storage devices, and superconducting exciting coils for turbogenerators. To increase the voltage of the next generation of transformers for superconducting dc power transmission, a research program must be set up to improve the cryotrons and to develop systems based on a different principle of operation, for example, semiconductor devices based on the principle of the volume effect in the intermediate environment

Study on control of defect mode in hybrid mirror chirped porous silicon photonic crystal

Science.gov (United States)

Chen, Ying; Luo, Pei; Han, Yangyang; Cui, Xingning; He, Lei

2018-03-01

Based on the optical resonance principle and the tight-binding theory, a hybrid mirror chirped porous silicon photonic crystal is proposed. The control of the defect mode in hybrid mirror chirped porous silicon photonic crystal is studied. Through the numerical simulation, the control regulations of the defect modes resulted by the number of the periodical layers for the fundamental unit and the cascading number of the chirped structures are analyzed, and the split and the degeneration of the defect modes resulted by the change of the relative location between the mirror structures and the quasi-mirror structures are discussed. The simulation results show that the band gap would be broadened with the increase of the chirp quantity and the layer number of unilateral chirp. Adjusting the structural parameters of the hybrid mirror structure, the multimode characteristics will occur in the band gap. The more the cascading number of the chirped units, the more the number of the filtering channels will be. In addition, with the increase of the relative location between the mirror structures and the quasi-mirror structures, the degeneration of the defect modes will occur and can obtain high Q value. The structure can provide effective theoretical references for the design the multi-channel filters and high Q value sensors.

Thiolated silicone oils as adhesive skin protectants for improved barrier function.

Science.gov (United States)

Partenhauser, A; Zupančič, O; Rohrer, J; Bonengel, S; Bernkop-Schnürch, A

2016-06-01

The purpose of this study was the evaluation of thiolated silicone oil as novel skin protectant exhibiting prolonged residence time, enhanced barrier function and reinforced occlusivity. Two silicone conjugates were synthesized with mercaptopropionic acid (MPA) and thioglycolic acid (TGA) as thiol ligands. Adhesion, protection against artificial urine and water vapour permeability with both a Payne cup set-up and transepidermal water loss (TEWL) measurements on porcine skin were assessed. Silicone thiomers showed pronounced substantivity on skin with 22.1 ± 6.3% and 39.2 ± 6.7% remaining silicone after 8 h for silicone-TGA and silicone-MPA, respectively, whereas unmodified silicone oil and dimethicone were no longer detectable. In particular, silicone-MPA provided a protective shield against artificial urine penetration with less than 25% leakage within 6 h. An up to 2.5-fold improved water vapour impermeability for silicone-MPA in comparison with unmodified control was discovered with the Payne cup model. In addition, for silicone-MPA a reduced TEWL by two-thirds corresponding to non-thiolated control was determined for up to 8 h. Thiolation of silicone oil leads to enhanced skin adhesiveness and barrier function, which is a major advantage compared to commonly used silicones and might thus be a promising treatment modality for various topical applications. © 2015 Society of Cosmetic Scientists and the Société Française de Cosmétologie.

Ac loss measurements on a superconducting transformer for a 25 kA superconducting rectifier

NARCIS (Netherlands)

ten Kate, Herman H.J.; Mulders, J.M.; de Reuver, J.L.; van de Klundert, L.J.M.

1984-01-01

Ac loss measurements have been performed on a superconducting transformer. The transformer is a part of a 25 kA thermally switched superconducting rectifier operating at a frequency of 0.1 Hz. The loss measurements have been automatized by means of a microcomputer sampling four relevant signals and

2010 NOAA Ortho-rectified Color MHW Mosaic of South Carolina: Hilton Head to St. Helena Sound

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2011 NOAA Ortho-rectified Mosaic of Hampton Harbor to Frost Point, New Hampshire (Mean High Water)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2015 NOAA Ortho-rectified Color Mosaic of San Diego, California: Integrated Ocean and Coastal Mapping Product

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2016 NOAA NGS Ortho-rectified Mean High Water Near-Infrared Mosaic of Venice Inlet ICW, Florida

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2014 NOAA NGS Ortho-rectified Mean Low Low Water Color Mosaic of Venice Inlet ICW, Florida

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2011 NOAA Ortho-rectified Mosaic of Merrimack River and Plum Island Sound, Massachusetts (Mean High Water)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2012 NOAA Ortho-rectified Near-Infrared Mosaic of Oregon: Columbia River - Bonneville Dam to Lake Umatilla

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2011 NOAA Ortho-rectified Mosaic of Maine: Reversing Falls at Whiting Bay, Mean Lower Low Water

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2012 NOAA Ortho-rectified Color MLLW Mosaic of Alabama: Bon Secour Bay and Weeks Bay NERR

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2016 NOAA NGS Ortho-rectified Mean Low Low Water Color Mosaic of St Johns River, Florida

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2012 NOAA Near Infrared MLLW Ortho-rectified Mosaic of Northeast Point to Murphy Island, South Carolina

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

Resonant Full-Bridge Synchronous Rectifier Utilizing 15 V GaN Transistors for Wireless Power Transfer Applications Following AirFuel Standard Operating at 6.78 MHz

DEFF Research Database (Denmark)

Jensen, Christopher Have Kiaerskou; Spliid, Frederik Monrad; Hertel, Jens Christian

2018-01-01

, this work uses low voltage GaN transistors on the receiver (Rx) side to allow synchronous rectification and soft switching, thereby achieving high efficiency. After analyzing adequate Class-DE rectifier topologies, a ClassDE full-bridge 5 W rectifier using 15 V GaN transistors are designed and implemented...

Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD

International Nuclear Information System (INIS)

Matsumoto, Y.; Godavarthi, S.; Ortega, M.; Sanchez, V.; Velumani, S.; Mallick, P.S.

2011-01-01

Different issues related to controlling size of nanocrystalline silicon (nc-Si) embedded in hydrogenated amorphous silicon oxide (a-SiO x :H) deposited by catalytic chemical vapor deposition (Cat-CVD) have been reported. Films were deposited using tantalum (Ta) and tungsten (W) filaments and it is observed that films deposited using tantalum filament resulted in good control on the properties. The parameters which can affect the size of nc-Si domains have been studied which include hydrogen flow rate, catalyst and substrate temperatures. The deposited samples are characterized by X-ray diffraction, HRTEM and micro-Raman spectroscopy, for determining the size of the deposited nc-Si. The crystallite formation starts for Ta-catalyst around the temperature of 1700 o C.

Inverse agonist-like action of cadmium on G-protein-gated inward-rectifier K+ channels

International Nuclear Information System (INIS)

Inanobe, Atsushi; Matsuura, Takanori; Nakagawa, Atsushi; Kurachi, Yoshihisa

2011-01-01

Highlights: → We examined allosteric control of K + channel gating. → We identified a high-affinity site for Cd 2+ to inhibit Kir3.2 activity. → The 6-coordination geometry supports the binding. → Cd 2+ inhibits Kir3.2 by trapping the conformation in the closed state. -- Abstract: The gate at the pore-forming domain of potassium channels is allosterically controlled by a stimulus-sensing domain. Using Cd 2+ as a probe, we examined the structural elements responsible for gating in an inward-rectifier K + channel (Kir3.2). One of four endogenous cysteines facing the cytoplasm contributes to a high-affinity site for inhibition by internal Cd 2+ . Crystal structure of its cytoplasmic domain in complex with Cd 2+ reveals that octahedral coordination geometry supports the high-affinity binding. This mode of action causes the tethering of the N-terminus to CD loop in the stimulus-sensing domain, suggesting that their conformational changes participate in gating and Cd 2+ inhibits Kir3.2 by trapping the conformation in the closed state like 'inverse agonist'.

Fabrication and Modification of Nanoporous Silicon Particles

Science.gov (United States)

Ferrari, Mauro; Liu, Xuewu

2010-01-01

Silicon-based nanoporous particles as biodegradable drug carriers are advantageous in permeation, controlled release, and targeting. The use of biodegradable nanoporous silicon and silicon dioxide, with proper surface treatments, allows sustained drug release within the target site over a period of days, or even weeks, due to selective surface coating. A variety of surface treatment protocols are available for silicon-based particles to be stabilized, functionalized, or modified as required. Coated polyethylene glycol (PEG) chains showed the effective depression of both plasma protein adsorption and cell attachment to the modified surfaces, as well as the advantage of long circulating. Porous silicon particles are micromachined by lithography. Compared to the synthesis route of the nanomaterials, the advantages include: (1) the capability to make different shapes, not only spherical particles but also square, rectangular, or ellipse cross sections, etc.; (2) the capability for very precise dimension control; (3) the capacity for porosity and pore profile control; and (4) allowance of complex surface modification. The particle patterns as small as 60 nm can be fabricated using the state-of-the-art photolithography. The pores in silicon can be fabricated by exposing the silicon in an HF/ethanol solution and then subjecting the pores to an electrical current. The size and shape of the pores inside silicon can be adjusted by the doping of the silicon, electrical current application, the composition of the electrolyte solution, and etching time. The surface of the silicon particles can be modified by many means to provide targeted delivery and on-site permanence for extended release. Multiple active agents can be co-loaded into the particles. Because the surface modification of particles can be done on wafers before the mechanical release, asymmetrical surface modification is feasible. Starting from silicon wafers, a treatment, such as KOH dipping or reactive ion

Silicon germanium as a novel mask for silicon deep reactive ion etching

KAUST Repository

Serry, Mohamed Y.

2013-10-01

This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

Study on the fabrication of silicon nanoparticles in an amorphous silicon light absorbing layer for solar cell applications

International Nuclear Information System (INIS)

Park, Joo Hyung; Song, Jin Soo; Lee, Jae Hee; Lee, Jeong Chul

2012-01-01

Hydrogenated amorphous-silicon (a-Si:H) thin-film solar cells have advantages of relatively simple technology, less material consumption, higher absorption ratio compared to crystalline silicon, and low cost due to the use of cheaper substrates rather than silicon wafers. However, together with those advantages, amorphous-silicon thin-film solar cells face several issues such as a relatively lower efficiency, a relatively wider bandgap, and the Staebler-Wronski effect (SWE) compared to other competing materials (i.e., crystalline silicon, CdTe, Cu(In x Ga (1-x) )Se 2 (CIGS), etc.). As a remedy for those drawbacks and a way to enhance the cell conversion efficiency at the same time, the employment of crystalline silicon nanoparticles (Si-NPs) in the a-Si matrix is proposed to organize the quantum-dot (QD) structure as the light-absorbing layer. This structure of the light absorbing layer consists of single-crystal Si-NPs in an a-Si:H thin-film matrix. The single-crystal Si-NPs are synthesized by using SiH 4 gas decomposition with CO 2 laser pyrolysis, and the sizes of Si-NPs are calibrated to control their bandgaps. The synthesized size-controlled Si-NPs are directly transferred to another chamber to form a QD structure by using co-deposition of the Si-NPs and the a-Si:H matrix. Transmission electron microscopy (TEM) analyses are employed to verify the sizes and the crystalline properties of the Si-NPs alone and of the Si-NPs in the a-Si:H matrix. The TEM results show successful co-deposition of size-controlled Si-NPs in the a-Si:H matrix, which is meaningful because it suggests the possibility of further enhancement of the a-Si:H solar-cell structure and of tandem structure applications by using a single element.

Self-diffusion in single crystalline silicon nanowires

Science.gov (United States)

Südkamp, T.; Hamdana, G.; Descoins, M.; Mangelinck, D.; Wasisto, H. S.; Peiner, E.; Bracht, H.

2018-04-01

Self-diffusion experiments in single crystalline isotopically controlled silicon nanowires with diameters of 70 and 400 nm at 850 and 1000 °C are reported. The isotope structures were first epitaxially grown on top of silicon substrate wafers. Nanowires were subsequently fabricated using a nanosphere lithography process in combination with inductively coupled plasma dry reactive ion etching. Three-dimensional profiling of the nanosized structure before and after diffusion annealing was performed by means of atom probe tomography (APT). Self-diffusion profiles obtained from APT analyses are accurately described by Fick's law for self-diffusion. Data obtained for silicon self-diffusion in nanowires are equal to the results reported for bulk silicon crystals, i.e., finite size effects and high surface-to-volume ratios do not significantly affect silicon self-diffusion. This shows that the properties of native point defects determined from self-diffusion in bulk crystals also hold for nanosized silicon structures with diameters down to 70 nm.

Oxygen defect processes in silicon and silicon germanium